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Sample records for sio2 gate insulators

  1. Investigation of pentacene growth on SiO2 gate insulator after photolithography for nitrogen-doped LaB6 bottom-contact electrode formation

    Science.gov (United States)

    Maeda, Yasutaka; Hiroki, Mizuha; Ohmi, Shun-ichiro

    2018-04-01

    Nitrogen-doped (N-doped) LaB6 is a candidate material for the bottom-contact electrode of n-type organic field-effect transistors (OFETs). However, the formation of a N-doped LaB6 electrode affects the surface morphology of a pentacene film. In this study, the effects of surface treatments and a N-doped LaB6 interfacial layer (IL) were investigated to improve the pentacene film quality after N-doped LaB6 electrode patterning with diluted HNO3, followed by resist stripping with acetone and methanol. It was found that the sputtering damage during N-doped LaB6 deposition on a SiO2 gate insulator degraded the crystallinity of pentacene. The H2SO4 and H2O2 (SPM) and diluted HF treatments removed the damaged layer on the SiO2 gate insulator surface. Furthermore, the N-doped LaB6 IL improved the crystallinity of pentacene and realized dendritic grain growth. Owing to these surface treatments, the hole mobility improved from 2.8 × 10‑3 to 0.11 cm2/(V·s), and a steep subthreshold swing of 78 mV/dec for the OFET with top-contact configuration was realized in air even after bottom-contact electrode patterning.

  2. Nanogranular SiO2 proton gated silicon layer transistor mimicking biological synapses

    International Nuclear Information System (INIS)

    Liu, M. J.; Huang, G. S.; Guo, Q. L.; Tian, Z. A.; Li, G. J.; Mei, Y. F.; Feng, P.; Shao, F.; Wan, Q.

    2016-01-01

    Silicon on insulator (SOI)-based transistors gated by nanogranular SiO 2 proton conducting electrolytes were fabricated to mimic synapse behaviors. This SOI-based device has both top proton gate and bottom buried oxide gate. Electrical transfer properties of top proton gate show hysteresis curves different from those of bottom gate, and therefore, excitatory post-synaptic current and paired pulse facilitation (PPF) behavior of biological synapses are mimicked. Moreover, we noticed that PPF index can be effectively tuned by the spike interval applied on the top proton gate. Synaptic behaviors and functions, like short-term memory, and its properties are also experimentally demonstrated in our device. Such SOI-based electronic synapses are promising for building neuromorphic systems.

  3. Interface properties of SiO2/n-GaN metal-insulator-semiconductor structures

    OpenAIRE

    Yoshitaka, Nakano; Takashi, Jimbo

    2002-01-01

    Electrical characterization of SiO2/n-GaN metal-insulator-semiconductor structures fabricated on sapphire substrates was performed by using high-frequency pulsed capacitance-voltage and capacitance-transient techniques. Fast and slow capacitance transients are clearly seen after applying reverse voltages, reflecting thermal emissions of carriers from the SiO2/GaN interface. The temperature dependence of the capacitance-voltage characteristics shows capacitance saturation in deep depletion (>1...

  4. Current Tunnelling in MOS Devices with Al2O3/SiO2 Gate Dielectric

    Directory of Open Access Journals (Sweden)

    A. Bouazra

    2008-01-01

    Full Text Available With the continued scaling of the SiO2 thickness below 2 nm in CMOS devices, a large direct-tunnelling current flow between the gate electrode and silicon substrate is greatly impacting device performance. Therefore, higher dielectric constant materials are desirable for reducing the gate leakage while maintaining transistor performance for very thin dielectric layers. Despite its not very high dielectric constant (∼10, Al2O3 has emerged as one of the most promising high-k candidates in terms of its chemical and thermal stability as its high-barrier offset. In this paper, a theoretical study of the physical and electrical properties of Al2O3 gate dielectric is reported including I(V and C(V characteristics. By using a stack of Al2O3/SiO2 with an appropriate equivalent oxide thickness of gate dielectric MOS, the gate leakage exhibits an important decrease. The effect of carrier trap parameters (depth and width at the Al2O3/SiO2 interface is also discussed.

  5. Enhancement of Electrical Conductance for Pentacene Thin Film Transistor by Controlling an Initial Layer-by-Layer Growth Mode Directly on SiO2 Insulator

    Science.gov (United States)

    Qi, Qiong; Jiang, Yeping; Yu, Aifang; Qiu, Xiaohui; Jiang, Chao

    2009-04-01

    Initial nucleation and growth of pentacene films on various pre-cleaning treated SiO2 gate insulators were systematically examined by atomic force microscope. The performance of fabricated pentacene thin film transistor devices was found to be highly related to the initial film growth modes. In contrast to the film in the three-dimensional island-like growth mode on SiO2 under an organic cleaning process, a layer-by-layer initial growth mode occurred on the SiO2 insulator cleaned with ammonia solution which has shown much improved electrical properties of the thin film transistors. Field effect mobility of the thin film transistor devices could be achieved as high as 1.0 cm2 V-1 s-1 on the bared SiO2/Si substrate and the on/off ratio was over 106. The enhanced electrical conductance was further confirmed by an electrostatic force microscopic observation of quantized electrical potentials via charge-injection to the submonolayer pentacene islands with layer-by-layer growth mode.

  6. Improving thermal insulation of TC4 using YSZ-based coating and SiO2 aerogel

    Directory of Open Access Journals (Sweden)

    Lei Jin

    2015-04-01

    Full Text Available In this paper, air plasmas spray (APS was used to prepare YSZ and Sc2O3–YSZ (ScYSZ coating in order to improve the thermal insulation ability of TC4 alloy. SiO2 aerogel was also synthesized and affixed on TC4 titanium alloy to inhabit thermal flow. The microstructures, phase compositions and thermal insulation performance of three coatings were analyzed in detail. The results of thermal diffusivity test by a laser flash method showed that the thermal diffusivities of YSZ, Sc2O3–YSZ and SiO2 aerogel are 0.553, 0.539 and 0.2097×10−6 m2/s, respectively. Then, the thermal insulation performances of three kinds of coating were investigated from 20 °C to 400 °C using high infrared radiation heat flux technology. The experimental results indicated that the corresponding temperature difference between the top TC4 alloy (400 °C and the bottom surface of YSZ is 41.5 °C for 0.6 mm thickness coating. For 1 mm thickness coating, the corresponding temperature difference between the top TC4 alloys (400 °C and the bottom surface of YSZ, ScYSZ, SiO2 aerogel three specimens is 54, 54.6 and 208 °C, respectively. The coating thickness and species were found to influence the heat insulation ability. In these materials, YSZ and ScYSZ exhibited a little difference for heat insulation behavior. However, SiO2 aerogel was the best one among them and it can be taken as protection material on TC4 alloys. In outer space, SiO2 aerogel can meet the need of thermal insulation of TC4 of high-speed aircraft.

  7. A pentacene thin film transistor with good performance using sol-gel derived SiO2 gate dielectric layer

    Science.gov (United States)

    Cavas, M.; Al-Ghamdi, Ahmed A.; Al-Hartomy, O. A.; El-Tantawy, F.; Yakuphanoglu, F.

    2013-02-01

    A low-voltage pentacene field-effect transistor with sol-gel derived SiO2 gate dielectric was fabricated. The mobility of the transistor was achieved as high as 1.526 cm2/V on the bared SiO2/Si substrate by a higher dielectric constant. The interface state density for the transistor was found to vary from 3.8 × 1010 to 7.5 × 1010 eV-1 cm-2 at frequency range of 100 kHz-1 MHz. It is evaluated that the SiO2 derived by low cost sol-gel is quite a promising candidate as a gate dielectric layer for low-voltage pentacene field-effect transistor.

  8. Gate-tunable coherent transport in Se-capped Bi2Se3 grown on amorphous SiO2/Si

    International Nuclear Information System (INIS)

    Liu, Y. H.; Chong, C. W.; Huang, S. Y.; Jheng, J. L.; Huang, S. M.; Huang, J. C. A.; Li, Z.; Qiu, H.; Marchenkov, V. V.

    2015-01-01

    A topological insulator (TI) is an exotic material that has a bulk insulating gap and metallic surface states with unique spin-momentum locking characteristics. Despite its various important applications, large scale integration of TI into MOSFET technologies and its coherent transport study are still rarely explored. Here, we report the growth of high quality Bi 2 Se 3 thin film on amorphous SiO 2 /Si substrate using MBE. By controlling the thickness of the film at ∼7 nm and capping the as grown film in situ with a 2 nm-thick Se layer, largest electrostatic field effect is obtained and the resistance is changed by almost 300%. More importantly, pronounced gate-tunable weak antilocalization (WAL) is observed, which refers to modulation of α from ∼−0.55 to ∼−0.2 by applying a back gate voltage. The analysis herein suggests that the significant gate-tunable WAL is attributable to the transition from weak disorder into intermediate disorder regime when the Fermi level is shifted downward by increasing the negative back gate voltage. Our findings may pave the ways towards the development of TI-based MOSFET and are promising for the applications of electric-field controlled spintronic and magnetic device

  9. Effect of size and position of gold nanocrystals embedded in gate oxide of SiO2/Si MOS structures

    Science.gov (United States)

    Chakraborty, Chaitali; Bose, Chayanika

    2016-02-01

    The influence of single and double layered gold (Au) nanocrystals (NC), embedded in SiO2 matrix, on the electrical characteristics of metal-oxide-semiconductor (MOS) structures is reported in this communication. The size and position of the NCs are varied and study is made using Sentaurus TCAD simulation tools. In a single NC-layered MOS structure, the role of NCs is more prominent when they are placed closer to SiO2/Si-substrate interface than to SiO2/Al-gate interface. In MOS structures with larger NC dots and double layered NCs, the charge storage capacity is increased due to charging of the dielectric in the presence of NCs. Higher breakdown voltage and smaller leakage current are also obtained in the case of dual NC-layered MOS device. A new phenomenon of smearing out of the capacitance-voltage curve is observed in the presence of dual NC layer indicating generation of interface traps. An internal electric field developed between these two charged NC layers is expected to generate such interface traps at the SiO2/Si interface.

  10. Effect of size and position of gold nanocrystals embedded in gate oxide of SiO2/Si MOS structures

    Directory of Open Access Journals (Sweden)

    Chaitali Chakraborty

    2016-03-01

    Full Text Available The influence of single and double layered gold (Au nanocrystals (NC, embedded in SiO2 matrix, on the electrical characteristics of metal–oxide–semiconductor (MOS structures is reported in this communication. The size and position of the NCs are varied and study is made using Sentaurus TCAD simulation tools. In a single NC-layered MOS structure, the role of NCs is more prominent when they are placed closer to SiO2/Si−substrate interface than to SiO2/Al–gate interface. In MOS structures with larger NC dots and double layered NCs, the charge storage capacity is increased due to charging of the dielectric in the presence of NCs. Higher breakdown voltage and smaller leakage current are also obtained in the case of dual NC-layered MOS device. A new phenomenon of smearing out of the capacitance–voltage curve is observed in the presence of dual NC layer indicating generation of interface traps. An internal electric field developed between these two charged NC layers is expected to generate such interface traps at the SiO2/Si interface.

  11. Control of Ga-oxide interlayer growth and Ga diffusion in SiO2/GaN stacks for high-quality GaN-based metal–oxide–semiconductor devices with improved gate dielectric reliability

    Science.gov (United States)

    Yamada, Takahiro; Watanabe, Kenta; Nozaki, Mikito; Yamada, Hisashi; Takahashi, Tokio; Shimizu, Mitsuaki; Yoshigoe, Akitaka; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

    2018-01-01

    A simple and feasible method for fabricating high-quality and highly reliable GaN-based metal–oxide–semiconductor (MOS) devices was developed. The direct chemical vapor deposition of SiO2 films on GaN substrates forming Ga-oxide interlayers was carried out to fabricate SiO2/GaO x /GaN stacked structures. Although well-behaved hysteresis-free GaN-MOS capacitors with extremely low interface state densities below 1010 cm‑2 eV‑1 were obtained by postdeposition annealing, Ga diffusion into overlying SiO2 layers severely degraded the dielectric breakdown characteristics. However, this problem was found to be solved by rapid thermal processing, leading to the superior performance of the GaN-MOS devices in terms of interface quality, insulating property, and gate dielectric reliability.

  12. Experimental and theoretical investigation of the effect of SiO2 content in gate dielectrics on work function shift induced by nanoscale capping layers

    KAUST Repository

    Caraveo-Frescas, J. A.

    2012-09-10

    The impact of SiO2 content in ultrathin gate dielectrics on the magnitude of the effective work function (EWF) shift induced by nanoscale capping layers has been investigated experimentally and theoretically. The magnitude of the effective work function shift for four different capping layers (AlN, Al2O3, La2O3, and Gd2O3) is measured as a function of SiO2 content in the gate dielectric. A nearly linear increase of this shift with SiO2 content is observed for all capping layers. The origin of this dependence is explained using density functional theory simulations.

  13. Advanced insulated gate bipolar transistor gate drive

    Science.gov (United States)

    Short, James Evans [Monongahela, PA; West, Shawn Michael [West Mifflin, PA; Fabean, Robert J [Donora, PA

    2009-08-04

    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  14. Interfacial charge trapping in extrinsic Y2O3/SiO2 bilayer gate dielectric based MIS devices on Si(100)

    Science.gov (United States)

    Rastogi, A. C.; Sharma, R. N.

    2001-08-01

    Metal-insulator-semiconductor (MIS) structures based on an extrinsic Y2O3 dielectric film on Si show high leakage currents due to roughness-related highly localized fields. Oxygen annealing increases the dielectric constant and strength and reduces leakage currents by transforming Y2O3 (film)/Si(100) into a bilayer Y2O3 (film)/SiO2/Si(100) dielectric structure. Evolution of interfacial SiO2 causes generation of mid-gap interface states at Ev + 0.23 eV and Ev + 0.43 eV, which act as electron traps and are responsible for hysteresis effects in capacitance-voltage (C-V) and current-voltage (I-V) behaviour in the accumulation-inversion modes. The electron trapping reduces the cathodic field and causes lowering of the current and the shift in current to higher fields after successive ramps. The charge trapping effects cause varied and unstable C-V and I-V behaviour of MIS structures based on a Y2O3/SiO2 bilayer gate dielectric. Its origin has been attributed to microstructure and defect state modification at the Y2O3 film-Si interface. This limits its application in high-density dynamic random access memory and ultra-large-scale integration devices.

  15. Memory and learning behaviors mimicked in nanogranular SiO2-based proton conductor gated oxide-based synaptic transistors.

    Science.gov (United States)

    Wan, Chang Jin; Zhu, Li Qiang; Zhou, Ju Mei; Shi, Yi; Wan, Qing

    2013-11-07

    In neuroscience, signal processing, memory and learning function are established in the brain by modifying ionic fluxes in neurons and synapses. Emulation of memory and learning behaviors of biological systems by nanoscale ionic/electronic devices is highly desirable for building neuromorphic systems or even artificial neural networks. Here, novel artificial synapses based on junctionless oxide-based protonic/electronic hybrid transistors gated by nanogranular phosphorus-doped SiO2-based proton-conducting films are fabricated on glass substrates by a room-temperature process. Short-term memory (STM) and long-term memory (LTM) are mimicked by tuning the pulse gate voltage amplitude. The LTM process in such an artificial synapse is due to the proton-related interfacial electrochemical reaction. Our results are highly desirable for building future neuromorphic systems or even artificial networks via electronic elements.

  16. Single electron transistors with hydrogen treatment of ALD SiO2 in nanoscale metal-insulator-metal tunnel junctions

    Science.gov (United States)

    Karbasian, Golnaz; McConnell, Michael S.; Orlov, Alexei O.; Nazarov, Alexei N.; Snider, Gregory L.

    2017-05-01

    Over the past five years, fabrication of metal-insulator-metal (MIM) single electron transistors (SET) featuring atomic layer deposition (ALD) of ultrathin tunnel barrier dielectrics (SiO2, Al2O3) has been reported. However, the performance of fabricated devices was significantly compromised by the presence of native metal oxide and problems associated with the nucleation of ALD dielectrics on metal substrates. To overcome the difficulty of dielectric ALD nucleation on metal substrates, we recently developed a fabrication technique in which the native metal oxide naturally forming in the presence of the ALD oxidant precursor is first used to promote the nucleation of ALD dielectrics, and then is chemically reduced by forming gas anneal (FGA) at temperatures near 400 °C. However, despite the elimination of native oxide, low temperature characterization of the devices fabricated using FGA reveals excess ‘switching’ noise of a very large magnitude resulting from charged defects within the junctions. It has been previously reported that remote hydrogen plasma (RHP) treatment of SiO2 thin films effectively eradicates fabrication defects. This work reports a comparative study of Ni-based MIM SET treated with FGA and/or RHP. We show that, using a combination of FGA and RHP treatments, it is possible to obtain MIM junctions free of switching noise and without a detectable contribution of native oxide.

  17. Lateral protonic/electronic hybrid oxide thin-film transistor gated by SiO2 nanogranular films

    International Nuclear Information System (INIS)

    Zhu, Li Qiang; Chao, Jin Yu; Xiao, Hui

    2014-01-01

    Ionic/electronic interaction offers an additional dimension in the recent advancements of condensed materials. Here, lateral gate control of conductivities of indium-zinc-oxide (IZO) films is reported. An electric-double-layer (EDL) transistor configuration was utilized with a phosphorous-doped SiO 2 nanogranular film to provide a strong lateral electric field. Due to the strong lateral protonic/electronic interfacial coupling effect, the IZO EDL transistor could operate at a low-voltage of 1 V. A resistor-loaded inverter is built, showing a high voltage gain of ∼8 at a low supply voltage of 1 V. The lateral ionic/electronic coupling effects are interesting for bioelectronics and portable electronics

  18. Improved linearity and reliability in GaN metal-oxide-semiconductor high-electron-mobility transistors using nanolaminate La2O3/SiO2 gate dielectric

    Science.gov (United States)

    Hsu, Ching-Hsiang; Shih, Wang-Cheng; Lin, Yueh-Chin; Hsu, Heng-Tung; Hsu, Hisang-Hua; Huang, Yu-Xiang; Lin, Tai-Wei; Wu, Chia-Hsun; Wu, Wen-Hao; Maa, Jer-Shen; Iwai, Hiroshi; Kakushima, Kuniyuki; Chang, Edward Yi

    2016-04-01

    Improved device performance to enable high-linearity power applications has been discussed in this study. We have compared the La2O3/SiO2 AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors (MOS-HEMTs) with other La2O3-based (La2O3/HfO2, La2O3/CeO2 and single La2O3) MOS-HEMTs. It was found that forming lanthanum silicate films can not only improve the dielectric quality but also can improve the device characteristics. The improved gate insulation, reliability, and linearity of the 8 nm La2O3/SiO2 MOS-HEMT were demonstrated.

  19. Physics of Trap Generation and Electrical Breakdown in Ultra-thin SiO2 and SiON Gate Dielectric Materials

    NARCIS (Netherlands)

    Nicollian, Paul Edward

    2007-01-01

    This work spans nearly a decade of industrial research in the reliability physics of deeply scaled SiO2 and SiON gate dielectrics. In this work, we will present our following original contributions to the field: • Below 5V stress, the dominant mechanism for stressed induced leakage current in the

  20. Surface properties of SiO2 with and without H2O2 treatment as gate dielectrics for pentacene thin-film transistor applications

    Science.gov (United States)

    Hung, Cheng-Chun; Lin, Yow-Jon

    2018-01-01

    The effect of H2O2 treatment on the surface properties of SiO2 is studied. H2O2 treatment leads to the formation of Si(sbnd OH)x at the SiO2 surface that serves to reduce the number of trap states, inducing the shift of the Fermi level toward the conduction band minimum. H2O2 treatment also leads to a noticeable reduction in the value of the SiO2 capacitance per unit area. The effect of SiO2 layers with H2O2 treatment on the behavior of carrier transports for the pentacene/SiO2-based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards negative gate-source voltages is due to the reduced number of trap states in SiO2 near the pentacene/SiO2 interface. The existence of a hydrogenated layer between pentacene and SiO2 leads to a change in the pentacene-SiO2 interaction, increasing the value of the carrier mobility.

  1. Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Kimihiro Matsukawa

    2012-01-01

    Full Text Available Printable organic thin-film transistor (O-TFT is one of the most recognized technical issues nowadays. Our recent progress on the formation of organic-inorganic hybrid thin films consists of polymethylsilsesquioxane (PMSQ, and its applications for the gate-insulating layer of O-TFTs are introduced in this paper. PMSQ synthesized in toluene solution with formic acid catalyst exhibited the electric resistivity of higher than 1014 Ω cm after thermal treatment at 150°C, and the very low concentration of residual silanol groups in PMSQ was confirmed. The PMSQ film contains no mobile ionic impurities, and this is also important property for the practical use for the gate-insulating materials. In the case of top-contact type TFT using poly(3-hexylthiophene (P3HT with PMSQ gate-insulating layer, the device properties were comparable with the TFTs having thermally grown SiO2 gate-insulating layer. The feasibility of PMSQ as a gate-insulating material for O-TFTs, which was fabricated on a flexible plastic substrate, has been demonstrated. Moreover, by the modification of PMSQ, further functionalities, such as surface hydrophobicity, high permittivity that allows low driving voltage, and photocurability that allows photolithography, could be appended to the PMSQ gate-insulating layers.

  2. Titanium-tungsten nanocrystals embedded in a SiO2/Al2O3 gate dielectric stack for low-voltage operation in non-volatile memory

    International Nuclear Information System (INIS)

    Yang Shiqian; Wang Qin; Zhang Manhong; Long Shibing; Liu Jing; Liu Ming

    2010-01-01

    Titanium-tungsten nanocrystals (NCs) were fabricated by a self-assembly rapid thermal annealing (RTA) process. Well isolated Ti 0.46 W 0.54 NCs were embedded in the gate dielectric stack of SiO 2 /Al 2 O 3 . A metal-oxide-semiconductor (MOS) capacitor was fabricated to investigate its application in a non-volatile memory (NVM) device. It demonstrated a large memory window of 6.2 V in terms of flat-band voltage (V FB ) shift under a dual-directional sweeping gate voltage of - 10 to 10 V. A 1.1 V V FB shift under a low dual-directional sweeping gate voltage of - 4 to 4 V was also observed. The retention characteristic of this MOS capacitor was demonstrated by a 0.5 V memory window after 10 4 s of elapsed time at room temperature. The endurance characteristic was demonstrated by a program/erase cycling test.

  3. Pressure Sensitive Insulated Gate Field Effect Transistor

    Science.gov (United States)

    Suminto, James Tjan-Meng

    A pressure sensitive insulated gate field effect transistor has been developed. The device is an elevated gate field-effect-transistor. It consists of a p-type silicon substrate in which two n^+ region, the source and drain, are formed. The gate electrode is a metal film sandwiched in an insulated micro-diaphragm resembling a pill-box which covers the gate oxide, drain, and source. The space between the gate electrode and the oxide is vacuum or an air-gap. When pressure is applied on the diaphragm it deflects and causes a change in the gate capacitance, and thus modulates the conductance of the channel between source and drain. A general theory dealing with the characteristic of this pressure sensitive insulated gate field effect transistor has been derived, and the device fabricated. The fabrication process utilizes the standard integrated circuit fabrication method. It features a batch fabrication of field effect devices followed by the batch fabrication of the deposited diaphragm on top of each field effect device. The keys steps of the diaphragm fabrication are the formation of spacer layer, formation of the diaphragm layer, and the subsequent removal of the spacer layer. The chip size of the device is 600 μm x 1050 mum. The diaphragm size is 200 μm x 200 mum. Characterization of the device has been performed. The current-voltage characteristics with pressure as parameters have been demonstrated and the current-pressure transfer curves obtained. They show non-linear characteristics as those of conventional capacitive pressure sensors. The linearity of threshold voltage versus pressure transfer curves has been demonstrated. The temperature effect on the device performances has been tested. The temperature coefficient of threshold voltage, rather than the electron mobility, has dominated the temperature coefficient of the device. Two temperature compensation schemes have been tested: one method is by connecting two identical PSIGFET in a differential amplifier

  4. Titanium-tungsten nanocrystals embedded in a SiO(2)/Al(2)O(3) gate dielectric stack for low-voltage operation in non-volatile memory.

    Science.gov (United States)

    Yang, Shiqian; Wang, Qin; Zhang, Manhong; Long, Shibing; Liu, Jing; Liu, Ming

    2010-06-18

    Titanium-tungsten nanocrystals (NCs) were fabricated by a self-assembly rapid thermal annealing (RTA) process. Well isolated Ti(0.46)W(0.54) NCs were embedded in the gate dielectric stack of SiO(2)/Al(2)O(3). A metal-oxide-semiconductor (MOS) capacitor was fabricated to investigate its application in a non-volatile memory (NVM) device. It demonstrated a large memory window of 6.2 V in terms of flat-band voltage (V(FB)) shift under a dual-directional sweeping gate voltage of - 10 to 10 V. A 1.1 V V(FB) shift under a low dual-directional sweeping gate voltage of - 4 to 4 V was also observed. The retention characteristic of this MOS capacitor was demonstrated by a 0.5 V memory window after 10(4) s of elapsed time at room temperature. The endurance characteristic was demonstrated by a program/erase cycling test.

  5. Top-gate pentacene-based organic field-effect transistor with amorphous rubrene gate insulator

    Science.gov (United States)

    Hiroki, Mizuha; Maeda, Yasutaka; Ohmi, Shun-ichiro

    2018-02-01

    The scaling of organic field-effect transistors (OFETs) is necessary for high-density integration and for this, OFETs with a top-gate configuration are required. There have been several reports of damageless lithography processes for organic semiconductor or insulator layers. However, it is still difficult to fabricate scaled OFETs with a top-gate configuration. In this study, the lift-off process and the device characteristics of the OFETs with a top-gate configuration utilizing an amorphous (α) rubrene gate insulator were investigated. We have confirmed that α-rubrene shows an insulating property, and its extracted linear mobility was 2.5 × 10‑2 cm2/(V·s). The gate length and width were 10 and 60 µm, respectively. From these results, the OFET with a top-gate configuration utilizing an α-rubrene gate insulator is promising for the high-density integration of scaled OFETs.

  6. Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics

    Data.gov (United States)

    National Aeronautics and Space Administration — Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to...

  7. Silicon dioxide with a silicon interfacial layer as an insulating gate for highly stable indium phosphide metal-insulator-semiconductor field effect transistors

    Science.gov (United States)

    Kapoor, V. J.; Shokrani, M.

    1991-01-01

    A novel gate insulator consisting of silicon dioxide (SiO2) with a thin silicon (Si) interfacial layer has been investigated for high-power microwave indium phosphide (InP) metal-insulator-semiconductor field effect transistors (MISFETs). The role of the silicon interfacial layer on the chemical nature of the SiO2/Si/InP interface was studied by high-resolution X-ray photoelectron spectroscopy. The results indicated that the silicon interfacial layer reacted with the native oxide at the InP surface, thus producing silicon dioxide, while reducing the native oxide which has been shown to be responsible for the instabilities in InP MISFETs. While a 1.2-V hysteresis was present in the capacitance-voltage (C-V) curve of the MIS capacitors with silicon dioxide, less than 0.1 V hysteresis was observed in the C-V curve of the capacitors with the silicon interfacial layer incorporated in the insulator. InP MISFETs fabricated with the silicon dioxide in combination with the silicon interfacial layer exhibited excellent stability with drain current drift of less than 3 percent in 10,000 sec, as compared to 15-18 percent drift in 10,000 sec for devices without the silicon interfacial layer. High-power microwave InP MISFETs with Si/SiO2 gate insulators resulted in an output power density of 1.75 W/mm gate width at 9.7 GHz, with an associated power gain of 2.5 dB and 24 percent power added efficiency.

  8. Enhancement of carrier mobility in pentacene thin-film transistor on SiO 2 by controlling the initial film growth modes

    Science.gov (United States)

    Qi, Qiong; Yu, Aifang; Jiang, Peng; Jiang, Chao

    2009-02-01

    Pentacene thin-film transistors (TFTs) were fabricated on thermally grown SiO 2 gate insulator under the conditions of various pre-cleaning treatments. Initial nucleation and growth of the material films on treated substrates were observed by atomic force microscope. The performance of fabricated TFT devices with different surface cleaning approaches was found to be highly related to the initial film morphologies. In contrast to the three-dimensional island-like growth mode on SiO 2 under an organic cleaning process, a layer-by-layer initial growth occurred on the SiO 2 insulator cleaned with ammonia solution, which was believed to be the origination of the excellent electrical properties of the TFT device. Field effect mobility of the TFT device could achieve as high as 1.0 cm 2/Vs on the bared SiO 2/Si substrate and the on/off ratio was over 10 6.

  9. Modeling SiO2 Ion Impurities Aging in Insulated Gate Power Devices Under Temperature and Voltage Stress

    Data.gov (United States)

    National Aeronautics and Space Administration — This paper presents a formal computational methodology to explain how the oxide in semiconductors degrades over time and the dependence of oxide degradation on...

  10. Method for disclosing invisible physical properties in metal-ferroelectric-insulator-semiconductor gate stacks

    Science.gov (United States)

    Sakai, Shigeki; Zhang, Wei; Takahashi, Mitsue

    2017-04-01

    In metal-ferroelectric-insulator-semiconductor gate stacks of ferroelectric-gate field effect transistors (FeFETs), it is impossible to directly obtain curves of polarization versus electric field (P f-E f) in the ferroelectric layer. The P f-E f behavior is not simple, i.e. the P f-E f curves are hysteretic and nonlinear, and the hysteresis curve width depends on the electric field scan amplitude. Unless the P f-E f relation is known, the field E f strength cannot be solved when the voltage is applied between the gate meal and the semiconductor substrate, and thus P f-E f cannot be obtained after all. In this paper, the method for disclosing the relationships among the polarization peak-to-peak amplitude (2P mm_av), the electric field peak-to-peak amplitude (2E mm_av), and the memory window (E w) in units of the electric field is presented. To get P mm_av versus E mm_av, FeFETs with different ferroelectric-layer thicknesses should be prepared. Knowing such essential physical parameters is helpful and in many cases enough to quantitatively understand the behavior of FeFETs. The method is applied to three groups. The first one consists of SrBi2Ta2O9-based FeFETs. The second and third ones consist of Ca x Sr1-x Bi2Ta2O9-based FeFETs made by two kinds of annealing. The method can clearly differentiate the characters of the three groups. By applying the method, ferroelectric relationships among P mm_av, E mm_av, and E w are well classified in the three groups according to the difference of the material kinds and the annealing conditions. The method also evaluates equivalent oxide thickness (EOT) of a dual layer of a deposited high-k insulator and a thermally-grown SiO2-like interfacial layer (IL). The IL thickness calculated by the method is consistent with cross-sectional image of the FeFETs observed by a transmission electron microscope. The method successfully discloses individual characteristics of the ferroelectric and the insulator layers hidden in the gate stack

  11. Nonvolatile Solid-State Charged-Polymer Gating of Topological Insulators into the Topological Insulating Regime

    Science.gov (United States)

    Ireland, R. M.; Wu, Liang; Salehi, M.; Oh, S.; Armitage, N. P.; Katz, H. E.

    2018-04-01

    We demonstrate the ability to reduce the carrier concentration of thin films of the topological insulator (TI) Bi2 Se3 by utilizing a nonvolatile electrostatic gating via corona charging of electret polymers. Sufficient electric field can be imparted to a polymer-TI bilayer to result in significant electron density depletion, even without the continuous connection of a gate electrode or the chemical modification of the TI. We show that the Fermi level of Bi2 Se3 is shifted toward the Dirac point with this method. Using terahertz spectroscopy, we find that the surface chemical potential is lowered into the bulk band gap (approximately 50 meV above the Dirac point and 170 meV below the conduction-band minimum), and it is stabilized in the intrinsic regime while enhancing electron mobility. The mobility of surface state electrons is enhanced to a value as high as approximately 1600 cm2/V s at 5 K.

  12. Gas-controlled dynamic vacuum insulation with gas gate

    Science.gov (United States)

    Benson, D.K.; Potter, T.F.

    1994-06-07

    Disclosed is a dynamic vacuum insulation comprising sidewalls enclosing an evacuated chamber and gas control means for releasing hydrogen gas into a chamber to increase gas molecule conduction of heat across the chamber and retrieving hydrogen gas from the chamber. The gas control means includes a metal hydride that absorbs and retains hydrogen gas at cooler temperatures and releases hydrogen gas at hotter temperatures; a hydride heating means for selectively heating the metal hydride to temperatures high enough to release hydrogen gas from the metal hydride; and gate means positioned between the metal hydride and the chamber for selectively allowing hydrogen to flow or not to flow between said metal hydride and said chamber. 25 figs.

  13. Simulation of Heating of an Oil-Cooled Insulated Gate Bipolar Transistors Converter Model

    National Research Council Canada - National Science Library

    Ovrebo, Gregory

    2004-01-01

    I used SolidWorks a three-dimensional modeling software, and FloWorks, a fluid dynamics analysis tool, to simulate oil flow and heat transfer in a heat sink structure attached to three insulated gate bipolar transistors...

  14. Characterization of insulated-gate bipolar transistor temperature on insulating, heat-spreading polycrystalline diamond substrate

    Science.gov (United States)

    Umezawa, Hitoshi; Shikata, Shin-ichi; Kato, Yukako; Mokuno, Yoshiaki; Seki, Akinori; Suzuki, Hiroshi; Bessho, Takeshi

    2017-01-01

    Polycrystalline diamond films have been utilized as direct bonding aluminum (DBA) substrates to improve cooling efficiency. A diamond film with a high quality factor was characterized by Raman spectroscopy and showed a high thermal conductivity of more than 1800 W m-1 K-1 and a low leakage current, even at an applied bias of 3 kV, because of the suppression of electrical conduction through the grain boundaries. The operating temperatures of Insulated-gate bipolar transistors (IGBTs) on diamond DBAs were 20-28% lower than those on AlN DBAs. The thermal resistivity of the diamond DBA module was 0.32 °C/W. The uniformity of the temperature distribution on a diamond DBA was excellent.

  15. Ultra-High Voltage 4H-SiC Bi-Directional Insulated Gate Bipolar Transistors

    Science.gov (United States)

    Chowdhury, Sauvik

    4H- Silicon Carbide (4H-SiC) is an attractive material for power semiconductor devices due to its large bandgap, high critical electric field and high thermal conductivity compared to Silicon (Si). For ultra-high voltage applications (BV > 10 kV), 4H-SiC Insulated Gate Bipolar Transistors (IGBTs) are favored over unipolar transistors due to lower conduction losses. With improvements in SiC materials and processing technology, promising results have been demonstrated in the area of conventional unidirectional 4H-SiC IGBTs, with breakdown voltage ratings up to 27 kV. This research presents the experimental demonstration of the world's first high voltage bi-directional power transistors in 4H-SiC. Traditionally, four (two IGBTs and two diodes) or two (two reverse blocking IGBTs) semiconductor devices are necessary to yield a bidirectional switch. With a monolithically integrated bidirectional switch as presented here, the number of semiconductor devices is reduced to only one, which results in increased reliability and reduced cost of the overall system. Additionally, by using the unique dual gate operation of BD-IGBTs, switching losses can be reduced to a small fraction of that in conventional IGBTs, resulting in increased efficiency. First, the performance limits of SiC IGBTs are calculated by using analytical methods. The performance benefits of SiC IGBTs over SiC unipolar devices and Si IGBTs are quantified. Numerical simulations are used to optimize the unit cell and edge termination structures for a 15 kV SiC BD-IGBT. The effect of different device parameters on BD-IGBT static and switching performance are quantified. Second, the process technology necessary for the fabrication of high voltage SiC BD-IGBTs is optimized. The effect of different process steps on parameters such as breakdown voltage, carrier lifetime, gate oxide reliability, SiO2-SiC interface charge density is quantified. A carrier lifetime enhancement process has been optimized for lightly doped

  16. Development of insulated gate bipolar transistor-based power ...

    Indian Academy of Sciences (India)

    [5] S V Nakhe et al, National Laser Symposium, 81–82 (2001). [6] E G Cook et al, 8th IEEE Pulsed Power Conference, June 1991. [7] L Druckmann et al, IEEE Power Modulator Symposium, 213–216 (1992). [8] Hybrid gate drivers and gate drive power supplies, M57962L datasheet from Mitsubishi. Electric Corpn. Pramana ...

  17. All-optical logic gates in plasmonic metal-insulator-metal nanowaveguide with slot cavity resonator

    Science.gov (United States)

    Dolatabady, Alireza; Granpayeh, Nosrat

    2017-04-01

    We demonstrate the compact all-optical logic XOR and OR gates in subwavelength plasmonic metal-insulator-metal waveguides with slot cavity resonators, especially for telecommunication wavelengths, with an extinction ratio of 25 dB, which can provide nanoscale logic integrated circuits. The gates behavior is based on suppression or enhancement of resonant modes in a slot cavity resonator induced by a change in position of input ports. The performance of the gates is discussed analytically and verified by the numerical method of finite-difference time-domain (FDTD).

  18. Processing and performance of organic insulators as a gate layer in ...

    Indian Academy of Sciences (India)

    Although several organic dielectrics have been used as gate insulator, it is difficult to choose one in absence of a comparative study covering processing of dielectric layer on polyethylene terephthalate (PET), characterization of dielectric property, pentacene film morphology and OTFT characterization. Here, we present the ...

  19. Processing and performance of organic insulators as a gate layer in ...

    Indian Academy of Sciences (India)

    Abstract. Fabrication of organic thin film transistor (OTFT) on flexible substrates is a challenge, because of its low softening temperature, high roughness and flexible nature. Although several organic dielectrics have been used as gate insulator, it is difficult to choose one in absence of a comparative study covering ...

  20. Effect of H and OH desorption and diffusion on electronic structure in amorphous In-Ga-Zn-O metal-oxide-semiconductor diodes with various gate insulators

    Science.gov (United States)

    Hino, Aya; Morita, Shinya; Yasuno, Satoshi; Kishi, Tomoya; Hayashi, Kazushi; Kugimiya, Toshihiro

    2012-12-01

    Metal-oxide-semiconductor (MOS) diodes with various gate insulators (G/Is) were characterized by capacitance-voltage characteristics and isothermal capacitance transient spectroscopy (ICTS) to evaluate the effect of H and OH desorption and diffusion on the electronic structures in amorphous In-Ga-Zn-O (a-IGZO) thin films. The density and the distribution of the space charge were found to be varied depending on the nature of the G/I. In the case of thermally grown SiO2 (thermal SiO2) G/Is, a high space-charge region was observed near the a-IGZO and G/I interface. After thermal annealing, the space-charge density in the deeper region of the film decreased, whereas remained unchanged near the interface region. The ICTS spectra obtained from the MOS diodes with the thermal SiO2 G/Is consisted of two broad peaks at around 5 × 10-4 and 3 × 10-2 s before annealing, while one broad peak was observed at around 1 × 10-4 s at the interface and at around 1 × 10-3 s in the bulk after annealing. Further, the trap density was considerably high near the interface. In contrast, the space-charge density was high throughout the bulk region of the MOS diode when the G/I was deposited by chemical vapor deposition (CVD). The ICTS spectra from the MOS diodes with the CVD G/Is revealed the existence of continuously distributed trap states, suggesting formations of high-density tail states below the conduction band minimum. According to secondary ion mass spectroscopy analyses, desorption and outdiffusion of H and OH were clearly observed in the CVD G/I sample. These phenomena could introduce structural fluctuations in the a-IGZO films, resulting in the formation of the conduction band tail states. Thin-film transistors (TFTs) with the same gate structure as the MOS diodes were fabricated to correlate the electronic properties with the TFT performance, and it was found that TFTs with the CVD G/I showed a reduced saturation mobility. These results indicate that the electronic structures

  1. Silicon-on-Insulator Lateral-Insulated-Gate-Bipolar-Transistor with Built-in Self-anti-ESD Diode

    Directory of Open Access Journals (Sweden)

    Xiaojun Cheng

    2014-05-01

    Full Text Available Power SOI (Silicon-On-Insulator devices have an inherent sandwich structure of MOS (Metal-Oxide-Semiconductor gate which is very easy to suffer ESD (Electro-Static Discharge overstress. To solve this reliability problem, studies on design and modification of a built-in self-anti-ESD diode for a preliminarily optimized high voltage SOI LIGBT (Lateral-Insulated-Gate-Bipolar-Transistor were carried out on the Silvaco TCAD (Technology-Computer-Aided-Design platform. According to the constrains of the technological process, the new introduction of the N+ doped region into P-well region that form the built-in self-anti-ESD diode should be done together with the doping of source under the same mask. The modifications were done by adjusting the vertical impurity profile in P-well into retrograde distribution and designing a cathode plate with a proper length to cover the forward depletion terminal and make sure that the thickness of the cathode plate is the same as that of the gate plate. The simulation results indicate that the modified device structure is compatible with the original one in process and design, the breakdown voltage margin of the former was expanded properly, and both the transient cathode voltages are clamped low enough very quickly. Therefore, the design and optimization results of the modified device structure of the built-in self-anti-ESD diode for the given SOI LIGBT meet the given requirements.

  2. Fringing field effects in negative capacitance field-effect transistors with a ferroelectric gate insulator

    Science.gov (United States)

    Hattori, Junichi; Fukuda, Koichi; Ikegami, Tsutomu; Ota, Hiroyuki; Migita, Shinji; Asai, Hidehiro; Toriumi, Akira

    2018-04-01

    We study the effects of fringing electric fields on the behavior of negative-capacitance (NC) field-effect transistors (FETs) with a silicon-on-insulator body and a gate stack consisting of an oxide film, an internal metal film, a ferroelectric film, and a gate electrode using our own device simulator that can properly handle the complicated relationship between the polarization and the electric field in ferroelectric materials. The behaviors of such NC FETs and the corresponding metal-oxide-semiconductor (MOS) FETs are simulated and compared with each other to evaluate the effects of the NC of the ferroelectric film. Then, the fringing field effects are evaluated by comparing the NC effects in NC FETs with and without gate spacers. The fringing field between the gate stack, especially the internal metal film, and the source/drain region induces more charges at the interface of the film with the ferroelectric film. Accordingly, the function of the NC to modulate the gate voltage and the resulting function to improve the subthreshold swing are enhanced. We also investigate the relationships of these fringing field effects to the drain voltage and four design parameters of NC FETs, i.e., gate length, gate spacer permittivity, internal metal film thickness, and oxide film thickness.

  3. Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor

    Directory of Open Access Journals (Sweden)

    Guoyou Liu

    2015-09-01

    Full Text Available Based on the construction of the 8-inch fabrication line, advanced process technology of 8-inch wafer, as well as the fourth-generation high-voltage double-diffused metal-oxide semiconductor (DMOS+ insulated-gate bipolar transistor (IGBT technology and the fifth-generation trench gate IGBT technology, have been developed, realizing a great-leap forward technological development for the manufacturing of high-voltage IGBT from 6-inch to 8-inch. The 1600 A/1.7 kV and 1500 A/3.3 kV IGBT modules have been successfully fabricated, qualified, and applied in rail transportation traction system.

  4. Controlled fabrication of Si nanocrystal delta-layers in thin SiO2 layers by plasma immersion ion implantation for nonvolatile memories

    International Nuclear Information System (INIS)

    Bonafos, C.; Ben-Assayag, G.; Groenen, J.; Carrada, M.; Spiegel, Y.; Torregrosa, F.; Normand, P.; Dimitrakis, P.; Kapetanakis, E.; Sahu, B. S.; Slaoui, A.

    2013-01-01

    Plasma Immersion Ion Implantation (PIII) is a promising alternative to beam line implantation to produce a single layer of nanocrystals (NCs) in the gate insulator of metal-oxide semiconductor devices. We report herein the fabrication of two-dimensional Si-NCs arrays in thin SiO 2 films using PIII and rapid thermal annealing. The effect of plasma and implantation conditions on the structural properties of the NC layers is examined by transmission electron microscopy. A fine tuning of the NCs characteristics is possible by optimizing the oxide thickness, implantation energy, and dose. Electrical characterization revealed that the PIII-produced-Si NC structures are appealing for nonvolatile memories

  5. Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module

    Science.gov (United States)

    2015-02-01

    prepared with SolidWorks computer-aided design software. The module has 8 silicon IGBTs mounted on copper (Cu) lands bonded onto a dielectric circuit...aluminum nitride ARL US Army Research Laboratory Cu copper IGBT insulated gate bipolar transistor ms millisecond 3D 3-dimensional W watt...RDRL CIO LL TECHL LIB 1 GOVT PRNTG OFC (PDF) ATTN A MALHOTRA 5 US ARMY RSRCH LAB (PDF) ATTN RDRL SED C W TIPTON ATTN RDRL SED P D

  6. Characterization of a vertically movable gate field effect transistor using a silicon-on-insulator wafer

    International Nuclear Information System (INIS)

    Song, In-Hyouk; Forfang, William B D; Cole, Bryan; Hee You, Byoung

    2014-01-01

    The vertically movable gate field effect transistor (VMGFET) is a FET-based sensing element, whose gate moves in a vertical direction over the channel. A VMGFET gate covers the region between source and drain. A 1 μm thick air layer separates the gate and the substrate of the VMGFET. A novel fabrication process to form a VMGFET using a silicon-on-insulator (SOI) wafer provides minimal internal stress of the gate structure. The enhancement-type n-channel VMGFET is fabricated with the threshold voltage of 2.32 V in steady state. A non-inverting amplifier is designed and integrated on a printable circuit board (PCB) to characterize device sensitivity and mechanical properties. The VMGFET is mechanically coupled to a speaker membrane to apply mechanical vibration. The oscillated drain current of FET are monitored and sampled with NI LabVIEW. The frequency of the output signal correlates with that of the input stimulus. The resonance frequency of the fabricated VMGFET is measured to be 1.11 kHz. The device sensitivity linearly increases by 0.106 mV/g Hz in the range of 150 Hz and 1 kHz. (paper)

  7. Duo gating on a 3D topological insulator - independent tuning of both topological surface states

    Science.gov (United States)

    Li, Chuan; de Ronde, Bob; Snelder, Marieke; Stehno, Martin; Huang, Yingkai; Golden, Mark; Brinkman, Alexander; ICE Team; IOP Collaboration

    ABSTRACT: Topological insulators are associated with a trove of exciting physics, such as the ability to host robust anyons, Majorana Bound States, which can be used for quantum computation. For future Majorana devices it is desirable to have the Fermi energy tuned as close as possible to the Dirac point of the topological surface state. Based on previous work on gating BSTS, we report the experimental progress towards gate-tuning of the top and bottom topological surface states of BiSbTeSe2 crystal flakes. When the Fermi level is moved across the Dirac point conduction is shown to change from electron dominated transport to hole dominated transport independently for either surface. In the high magnetic field, one can tune the system precisely between the different landau levels of both surfaces, thus a full gating map of the possible landau levels combination is established. In addition, we provide a simple capacitance model to explain the general hysteresis behaviors in topological insulator systems.

  8. Improvements in the reliability of a-InGaZnO thin-film transistors with triple stacked gate insulator in flexible electronics applications

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Hua-Mao [Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Chang, Ting-Chang, E-mail: tcchang3708@gmail.com [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Advanced Optoelectronics Technology Center, National Cheng Kung University, Taiwan (China); Tai, Ya-Hsiang [Department of Photonics & Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu, Taiwan (China); Chen, Kuan-Fu [Department of Physics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Chiang, Hsiao-Cheng [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Liu, Kuan-Hsien [Department of Electrophysics, National Chiao Tung University, Hsinchu, Taiwan (China); Lee, Chao-Kuei [Department of Photonics, National Sun Yat-Sen University, Kaohsiung, Taiwan (China); Lin, Wei-Ting; Cheng, Chun-Cheng; Tu, Chun-Hao; Liu, Chu-Yu [Advanced Technology Research Center, AU Optronics Corp, Hsinchu, Taiwan (China)

    2015-11-30

    This study examined the impact of the low-temperature stacking gate insulator on the gate bias instability of a-InGaZnO thin film transistors in flexible electronics applications. Although the quality of SiN{sub x} at low process/deposition temperature is better than that of SiO{sub x} at similarly low process/deposition temperature, there is still a very large positive threshold voltage (V{sub th}) shift of 9.4 V for devices with a single low-temperature SiN{sub x} gate insulator under positive gate bias stress. However, a suitable oxide–nitride–oxide-stacked gate insulator exhibits a V{sub th} shift of only 0.23 V. This improvement results from the larger band offset and suitable gate insulator thickness that can effectively suppress carrier trapping behavior. - Highlights: • The cause of the bias instability for a low-temperature gate insulator is verified. • A triple-stacked gate insulator was fabricated. • A suitable triple stacked gate insulator shows only 0.23 V threshold voltage shift.

  9. Highly stable piezo-immunoglobulin-biosensing of a SiO2/ZnO nanogenerator as a self-powered/active biosensor arising from the field effect influenced piezoelectric screening effect

    Science.gov (United States)

    Zhao, Yayu; Fu, Yongming; Wang, Penglei; Xing, Lili; Xue, Xinyu

    2015-01-01

    Highly stable piezo-immunoglobulin-biosensing has been realized from a SiO2/ZnO nanowire (NW) nanogenerator (NG) as a self-powered/active biosensor. The piezoelectric output generated by the SiO2/ZnO NW NG can act not only as a power source for driving the device, but also as a sensing signal for detecting immunoglobulin G (IgG). The stability of the device is very high, and the relative standard deviation (RSD) ranges from 1.20% to 4.20%. The limit of detection (LOD) of IgG on the device can reach 5.7 ng mL-1. The response of the device is in a linear relationship with IgG concentration. The biosensing performance of SiO2/ZnO NWs is much higher than that of bare ZnO NWs. A SiO2 layer uniformly coated on the surface of the ZnO NW acts as the gate insulation layer, which increases mechanical robustness and protects it from the electrical leakages and short circuits. The IgG biomolecules modified on the surface of the SiO2/ZnO NW act as a gate potential, and the field effect can influence the surface electron density of ZnO NWs, which varies the screening effect of free-carriers on the piezoelectric output. The present results demonstrate a feasible approach for a highly stable self-powered/active biosensor.

  10. Highly stable piezo-immunoglobulin-biosensing of a SiO2/ZnO nanogenerator as a self-powered/active biosensor arising from the field effect influenced piezoelectric screening effect.

    Science.gov (United States)

    Zhao, Yayu; Fu, Yongming; Wang, Penglei; Xing, Lili; Xue, Xinyu

    2015-02-07

    Highly stable piezo-immunoglobulin-biosensing has been realized from a SiO2/ZnO nanowire (NW) nanogenerator (NG) as a self-powered/active biosensor. The piezoelectric output generated by the SiO2/ZnO NW NG can act not only as a power source for driving the device, but also as a sensing signal for detecting immunoglobulin G (IgG). The stability of the device is very high, and the relative standard deviation (RSD) ranges from 1.20% to 4.20%. The limit of detection (LOD) of IgG on the device can reach 5.7 ng mL(-1). The response of the device is in a linear relationship with IgG concentration. The biosensing performance of SiO2/ZnO NWs is much higher than that of bare ZnO NWs. A SiO2 layer uniformly coated on the surface of the ZnO NW acts as the gate insulation layer, which increases mechanical robustness and protects it from the electrical leakages and short circuits. The IgG biomolecules modified on the surface of the SiO2/ZnO NW act as a gate potential, and the field effect can influence the surface electron density of ZnO NWs, which varies the screening effect of free-carriers on the piezoelectric output. The present results demonstrate a feasible approach for a highly stable self-powered/active biosensor.

  11. Insulated gate and surface passivation structures for GaN-based power transistors

    Science.gov (United States)

    Yatabe, Zenji; Asubar, Joel T.; Hashizume, Tamotsu

    2016-10-01

    Recent years have witnessed GaN-based devices delivering their promise of unprecedented power and frequency levels and demonstrating their capability as an able replacement for Si-based devices. High-electron-mobility transistors (HEMTs), a key representative architecture of GaN-based devices, are well-suited for high-power and high frequency device applications, owing to highly desirable III-nitride physical properties. However, these devices are still hounded by issues not previously encountered in their more established Si- and GaAs-based devices counterparts. Metal-insulator-semiconductor (MIS) structures are usually employed with varying degrees of success in sidestepping the major problematic issues such as excessive leakage current and current instability. While different insulator materials have been applied to GaN-based transistors, the properties of insulator/III-N interfaces are still not fully understood. This is mainly due to the difficulty of characterizing insulator/AlGaN interfaces in a MIS HEMT because of the two resulting interfaces: insulator/AlGaN and AlGaN/GaN, making the potential modulation rather complicated. Although there have been many reports of low interface-trap densities in HEMT MIS capacitors, several papers have incorrectly evaluated their capacitance-voltage (C-V) characteristics. A HEMT MIS structure typically shows a 2-step C-V behavior. However, several groups reported C-V curves without the characteristic step at the forward bias regime, which is likely to the high-density states at the insulator/AlGaN interface impeding the potential control of the AlGaN surface by the gate bias. In this review paper, first we describe critical issues and problems including leakage current, current collapse and threshold voltage instability in AlGaN/GaN HEMTs. Then we present interface properties, focusing on interface states, of GaN MIS systems using oxides, nitrides and high-κ dielectrics. Next, the properties of a variety of AlGaN/GaN MIS

  12. Selective SiO2 etching in three dimensional structures using parylene-C as mask

    NARCIS (Netherlands)

    Veltkamp, Henk-Willem; Zhao, Yiyuan; de Boer, Meint J.; Wiegerink, Remco J.; Lötters, Joost Conrad

    2017-01-01

    This abstract describes an application of an easy and straightforward method for selective SiO2 etching in three dimensional structures, which is developed by our group. The application in this abstract is the protection of the buried-oxide (BOX) layer of a silicon-on-insulator (SOI) wafer against

  13. Design of the optimum insulator gate bipolar transistor using response surface method with cluster analysis

    CERN Document Server

    Wang, Chi Ling; Huang Sy Ruen; Yeh Chao Yu

    2004-01-01

    In this paper, a statistical methodology that can be used for the optimization of the Insulator Gate Bipolar Transistor (IGBT) devices is proposed. This is achieved by integrating the response surface method (RSM) with cluster analysis, weighted composite method and genetic algorithm (GA). The device characteristic of IGBT was simulated based upon the fabrication simulator, ATHENA, and the device simulator, ATLAS. This methodology, yielded another way to investigate the IGBT device and to make a decision in the tradeoff between the breakdown voltage and the on-resistance. In this methodology, we also show how to use cluster analysis to determine the dominant factors that are not visible in the screening of all experiments. 20 Refs.

  14. Analysis of the dynamic avalanche of punch through insulated gate bipolar transistor (PT-IGBT)

    Science.gov (United States)

    Lefranc, P.; Planson, D.; Morel, H.; Bergogne, D.

    2009-09-01

    In the paper proposed here, we are studying the dynamic avalanche from experimental results first, dynamic avalanche is identified on a punch through insulated gate bipolar transistor (PT-IGBT) module 1200 V-300 A from Mitsubishi. Secondly, the phenomenon is analysed thanks to simple solid state devices equations. Numerical simulations are used to confirm experimental results. Simulation results allows us locating the active area of the dynamic avalanche during turn-off under over-current conditions. A PT-IGBT cell is described with MEDICI™, a finite element simulator. A mixed-mode simulation is performed thanks to MEDICI™ and SPICE™. The circuit simulated here is a buck topology with an inductive load. Finally, a thermal analysis is performed to estimate temperature increase due to dynamic avalanche.

  15. A New Switching Impulse Generator Based on Transformer Boosting and Insulated Gate Bipolar Transistor Trigger Control

    Directory of Open Access Journals (Sweden)

    Ming Ren

    2016-08-01

    Full Text Available To make the switching impulse (SI generator more compact, portable and feasible in field tests, a new approach based on transformer boosting was developed. To address problems such as triggering synchronization and electromagnetic interference involved with the traditional spark gap, an insulated gate bipolar transistor (IGBT module with drive circuit was employed as the impulse trigger. An optimization design for the component parameters of the primary winding side of the transformer was realized by numerical calculation and error correction. Experiment showed that the waveform parameters of SI and oscillating switching impulse (OSI voltages generated by the new generator were consistent with the numerical calculation and the error correction. The generator was finally built on a removable high voltage transformer with small size. Thus the volume of the generator is significantly reduced. Experiments showed that the waveform parameters of SI and OSI voltages generated by the new generator were basically consistent with the numerical calculation and the error correction.

  16. High-mobility BaSnO3 thin-film transistor with HfO2 gate insulator

    Science.gov (United States)

    Kim, Young Mo; Park, Chulkwon; Kim, Useong; Ju, Chanjong; Char, Kookrin

    2016-01-01

    Thin-film transistors have been fabricated using La-doped BaSnO3 as n-type channels and (In,Sn)2O3 as source, drain, and gate electrodes. HfO2 was grown as gate insulators by atomic layer deposition. The field-effect mobility, Ion/Ioff ratio, and subthreshold swing of the device are 24.9 cm2 V-1 s-1, 6.0 × 106, and 0.42 V dec-1, respectively. The interface trap density, evaluated to be higher than 1013 cm-2 eV-1, was found to be slightly lower than that of the thin-film transistor with an Al2O3 gate insulator. We attribute the much smaller subthreshold swing values to the higher dielectric constant of HfO2.

  17. Insulated gate and surface passivation structures for GaN-based power transistors

    International Nuclear Information System (INIS)

    Yatabe, Zenji; Asubar, Joel T; Hashizume, Tamotsu

    2016-01-01

    Recent years have witnessed GaN-based devices delivering their promise of unprecedented power and frequency levels and demonstrating their capability as an able replacement for Si-based devices. High-electron-mobility transistors (HEMTs), a key representative architecture of GaN-based devices, are well-suited for high-power and high frequency device applications, owing to highly desirable III-nitride physical properties. However, these devices are still hounded by issues not previously encountered in their more established Si- and GaAs-based devices counterparts. Metal–insulator–semiconductor (MIS) structures are usually employed with varying degrees of success in sidestepping the major problematic issues such as excessive leakage current and current instability. While different insulator materials have been applied to GaN-based transistors, the properties of insulator/III-N interfaces are still not fully understood. This is mainly due to the difficulty of characterizing insulator/AlGaN interfaces in a MIS HEMT because of the two resulting interfaces: insulator/AlGaN and AlGaN/GaN, making the potential modulation rather complicated. Although there have been many reports of low interface-trap densities in HEMT MIS capacitors, several papers have incorrectly evaluated their capacitance–voltage ( C – V ) characteristics. A HEMT MIS structure typically shows a 2-step C – V behavior. However, several groups reported C – V curves without the characteristic step at the forward bias regime, which is likely to the high-density states at the insulator/AlGaN interface impeding the potential control of the AlGaN surface by the gate bias. In this review paper, first we describe critical issues and problems including leakage current, current collapse and threshold voltage instability in AlGaN/GaN HEMTs. Then we present interface properties, focusing on interface states, of GaN MIS systems using oxides, nitrides and high- κ dielectrics. Next, the properties of a

  18. A highly efficient g-C3N4/SiO2heterojunction: the role of SiO2in the enhancement of visible light photocatalytic activity.

    Science.gov (United States)

    Hao, Qiang; Niu, Xiuxiu; Nie, Changshun; Hao, Simeng; Zou, Wei; Ge, Jiangman; Chen, Daimei; Yao, Wenqing

    2016-11-23

    SiO 2 , an insulator, hardly has any photocatalytic acitivity due to its intrinsic property, and it is generally used as a hard template to increase the surface area of catalysts. However, in this work, we found that the surface state of the insulator SiO 2 can promote the migration of photogenerated charge carriers, leading to the enhancement of the photooxidation ability of graphitic carbon nitride (g-C 3 N 4 ). A one-pot calcination method was employed to prepare g-C 3 N 4 /SiO 2 composites using melamine and SiO 2 as precursors. The composites present considerably high photocatalytic degradation activities for 2,4-dichlorophenol (2,4-DCP) and rhodamine B (RhB) under visible light (λ > 420 nm) irradiation, which are about 1.53 and 4.18 times as high as those of bulk g-C 3 N 4 , respectively. The enhancement of the photocatalytic activity is due to the fact that the introduction of the insulator SiO 2 in g-C 3 N 4 /SiO 2 composites can greatly improve the specific surface area of the composites; more importantly, the impurity energy level of SiO 2 can help accelerate the separation and transfer of electron-hole pairs of g-C 3 N 4 . Electron paramagnetic resonance (EPR) spectroscopy and trapping experiments with different radical scavengers show that the main active species of g-C 3 N 4 are superoxide radicals, while holes also play a role in photodegradation. For g-C 3 N 4 /SiO 2 -5, besides superoxide radicals and holes, the effect of hydroxyl radicals was greatly improved. Finally, a possible mechanism for the photogenerated charge carrier migration of the g-C 3 N 4 /SiO 2 photocatalyst was proposed.

  19. Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures

    International Nuclear Information System (INIS)

    Kobayashi, H.; Imamura, K.; Kim, W.-B.; Im, S.-S.; Asuha

    2010-01-01

    We have developed low temperature formation methods of SiO 2 /Si and SiO 2 /SiC structures by use of nitric acid, i.e., nitric acid oxidation of Si (or SiC) (NAOS) methods. By use of the azeotropic NAOS method (i.e., immersion in 68 wt% HNO 3 aqueous solutions at 120 deg. C), an ultrathin (i.e., 1.3-1.4 nm) SiO 2 layer with a low leakage current density can be formed on Si. The leakage current density can be further decreased by post-metallization anneal (PMA) at 200 deg. C in hydrogen atmosphere, and consequently the leakage current density at the gate bias voltage of 1 V becomes 1/4-1/20 of that of an ultrathin (i.e., 1.5 nm) thermal oxide layer usually formed at temperatures between 800 and 900 deg. C. The low leakage current density is attributable to (i) low interface state density, (ii) low SiO 2 gap-state density, and (iii) high band discontinuity energy at the SiO 2 /Si interface arising from the high atomic density of the NAOS SiO 2 layer. For the formation of a relatively thick (i.e., ≥10 nm) SiO 2 layer, we have developed the two-step NAOS method in which the initial and subsequent oxidation is performed by immersion in ∼40 wt% HNO 3 and azeotropic HNO 3 aqueous solutions, respectively. In this case, the SiO 2 formation rate does not depend on the Si surface orientation. Using the two-step NAOS method, a uniform thickness SiO 2 layer can be formed even on the rough surface of poly-crystalline Si thin films. The atomic density of the two-step NAOS SiO 2 layer is slightly higher than that for thermal oxide. When PMA at 250 deg. C in hydrogen is performed on the two-step NAOS SiO 2 layer, the current-voltage and capacitance-voltage characteristics become as good as those for thermal oxide formed at 900 deg. C. A relatively thick (i.e., ≥10 nm) SiO 2 layer can also be formed on SiC at 120 deg. C by use of the two-step NAOS method. With no treatment before the NAOS method, the leakage current density is very high, but by heat treatment at 400 deg. C in

  20. Transport properties of SiO2/AlInN/AlN/GaN metal-oxide-semiconductor high electron mobility transistors on SiC substrate

    Science.gov (United States)

    Lachab, M.; Sultana, M.; Fareed, Q.; Husna, F.; Adivarahan, V.; Khan, A.

    2014-04-01

    Unpassivated SiO2/AlInN/AlN/GaN metal-oxide-semiconductor high electron mobility transistors (MOSHEMTs) exhibiting a thin barrier layer are investigated with a particular focus on their dc characteristics dependence on the gate length. The epiwafer exhibits a sheet resistance of ˜250 Ω/□ and a channel charge density of 7.4 × 1012 cm-2 deduced from the 1 MHz capacitance-voltage curves. The results indicate that the thickness of the AlInN barrier can be reduced below 5 nm without degradation of the insulated gate devices performance. For transistors with gate lengths (LG) between 1.8 and 2.0 µm, dc drain saturation currents densities as high as 1.8 A mm-1 are achieved at +4 V gate-source bias (VGS) with very low reverse gate leakage currents. The electron zero-bias drift mobility was determined to be 1670 cm2 V-1 s-1 from the low-field channel conductance measurements. On the other side, using an analytical model it is found that the maximum output current density at VGS = 0 V can be enhanced by ˜23% when LG is scaled from 1.8 µm down to 100 nm. With further improvement of the quality of the gate insulating oxide layer and the implementation of surface passivation, both with the aim of suppressing the observed current collapse, the presented results suggest that these MOSHEMTs could become very attractive for the realization of high-power electronics.

  1. Low-temperature PZT thin-film ferroelectric memories fabricated on SiO2/Si and glass substrates

    Directory of Open Access Journals (Sweden)

    D.H. Minh

    2016-03-01

    Full Text Available In a ferroelectric-gate thin film transistor memory (FGT type structure, the gate-insulator layer is extremely important for inducing the charge when accumulating or depleting. We concentrated on the application of low-temperature PZT films crystallized at 450, 500 and 550 °C, instead of at conventional high temperatures (≥600 °C. Investigation of the crystalline structure and electrical properties indicated that the PZT film, crystallized at 500 °C, was suitable for FGT fabrication because of a high (111 orientation, large remnant polarization of 38 μC/cm2 on SiO2/Si substrate and 17.8 μC/cm2 on glass, and low leakage current of 10−6 A/cm2. In sequence, we successfully fabricated FGT with all processes below 500 °C on a glass substrate, whose operation exhibits a memory window of 4 V, ON/OFF current ratio of 105, field-effect mobility of 0.092 cm2 V−1 s−1, and retention time of 1 h.

  2. Dielectric strength of SiO2 in a CMOS transistor structure

    International Nuclear Information System (INIS)

    Soden, J.M.

    1979-01-01

    The distribution of experimental dielectric strengths of SiO 2 gate dielectric in a CMOS transistor structure is shown to be composed of a primary, statistically-normal distribution of high dielectric strength and a secondary distribution spread through the lower dielectric strength region. The dielectric strength was not significantly affected by high level (1 x 10 6 RADS (Si)) gamma radiation or high temperature (200 0 C) stress. The primary distribution breakdowns occurred at topographical edges, mainly at the gate/field oxide interface, and the secondary distribution breakdowns occurred at random locations in the central region of the gate

  3. Radiation effects in advanced multiple gate and silicon-on-insulator transistors

    International Nuclear Information System (INIS)

    Simoen, E.; Gaillardin, M.; Paillet, P.; Reed, R.A.; Schrimpf, R.D.; Alles, M.L.; El-Mamouni, F.; Fleetwood, D.M.; Griffoni, A.; Claeys, C.

    2013-01-01

    The aim of this review paper is to describe in a comprehensive manner the current understanding of the radiation response of state-of-the-art Silicon-on-Insulator (SOI) and FinFET CMOS technologies. Total Ionizing Dose (TID) response, heavy-ion micro-dose effects and single-event effects (SEEs) will be discussed. It is shown that a very high TID tolerance can be achieved by narrow-fin SOI FinFET architectures, while bulk FinFETs may exhibit similar TID response to the planar devices. Due to the vertical nature of FinFETs, a specific heavy-ion response can be obtained, whereby the angle of incidence becomes highly important with respect to the vertical sidewall gates. With respect to SEE, the buried oxide in the SOI FinFETs suppresses the diffusion tails from the charge collection in the substrate compared to the planar bulk FinFET devices. Channel lengths and fin widths are now comparable to, or smaller than the dimensions of the region affected by the single ionizing ions or lasers used in testing. This gives rise to a high degree of sensitivity to individual device parameters and source-drain shunting during ion-beam or laser-beam SEE testing. Simulations are used to illuminate the mechanisms observed in radiation testing and the progress and needs for the numerical modeling/ simulation of the radiation response of advanced SOI and FinFET transistors are highlighted. (authors)

  4. Simulation of dual-gate SOI MOSFET with different dielectric layers

    Science.gov (United States)

    Yadav, Jyoti; Chaudhary, R.; Mukhiya, R.; Sharma, R.; Khanna, V. K.

    2016-04-01

    The paper presents the process design and simulation of silicon-on-insulator (SOI)-based dual-gate metal oxide field-effect transistor (DG-MOSFET) stacked with different dielectric layers on the top of gate oxide. A detailed 2D process simulation of SOI-MOSFETs and its electrical characterization has been done using SILVACO® TCAD tool. A variation in transconductance was observed with different dielectric layers, AlN-gate MOSFET having the highest tranconductance value as compared to other three dielectric layers (SiO2, Si3N4 and Al2O3).

  5. Direct etching of SiO2 and Al2O3 by 900-keV gold ions

    OpenAIRE

    Glass, Gary A.; Dias, Johnny Ferraz; Dymnikov, Alexander D.; Houston, Louis M.; Rout, Bibhudutta

    2009-01-01

    We report the direct etching of Al2O3 and SiO2 using 900-keV Au+ ions. 2000-mesh Cu grids were employed as masks using two different configurations: 1 the Cu mesh was placed on top of each insulator separately and independent irradiations were performed, and 2 the Al2O3 and SiO2 substrates were positioned in an edge-to-edge configuration with a single Cu grid providing a common mask to both insulators. Scanning electron microscopy SEM analysis revealed quite different patterns resulting from ...

  6. Normally-off fully recess-gated GaN metal-insulator-semiconductor field-effect transistor using Al2O3/Si3N4 bilayer as gate dielectrics

    Science.gov (United States)

    Wang, Hongyue; Wang, Jinyan; Liu, Jingqian; Li, Mengjun; He, Yandong; Wang, Maojun; Yu, Min; Wu, Wengang; Zhou, Yang; Dai, Gang

    2017-10-01

    By a self-terminating gate recess etching technique, a normally-off fully recess-gated GaN metal-insulator-semiconductor field-effect transistor (MISFET) was fabricated using Al2O3/Si3N4 bilayer as gate dielectrics. Owing to the high breakdown electric field (˜10 MV/cm) of the gate dielectrics, the device exhibits a large gate swing of 18 V, a high threshold voltage of 1.7 V (at I D = 100 µA/mm), a large maximum drain current of 534 mA/mm, a gate leakage current lower than 20 nA/mm in the whole gate swing, and a high OFF-state breakdown voltage of 1282 V. Furthermore, owing to the high gate overdrive (V GS - V TH), the on-resistance of the device only increases by 5.4% under a constant stress of V GS/V DS = 18 V/1 V.

  7. Thermally tunable VO2-SiO2 nanocomposite thin-film capacitors

    Science.gov (United States)

    Sun, Yifei; Narayanachari, K. V. L. V.; Wan, Chenghao; Sun, Xing; Wang, Haiyan; Cooley, Kayla A.; Mohney, Suzanne E.; White, Doug; Duwel, Amy; Kats, Mikhail A.; Ramanathan, Shriram

    2018-03-01

    We present a study of co-sputtered VO2-SiO2 nanocomposite dielectric thin-film media possessing continuous temperature tunability of the dielectric constant. The smooth thermal tunability is a result of the insulator-metal transition in the VO2 inclusions dispersed within an insulating matrix. We present a detailed comparison of the dielectric characteristics of this nanocomposite with those of a VO2 control layer and of VO2/SiO2 laminate multilayers of comparable overall thickness. We demonstrated a nanocomposite capacitor that has a thermal capacitance tunability of ˜60% between 25 °C and 100 °C at 1 MHz, with low leakage current. Such thermally tunable capacitors could find potential use in applications such as sensing, thermal cloaks, and phase-change energy storage devices.

  8. N-channel thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride with ultrathin polymer gate buffer layer

    International Nuclear Information System (INIS)

    Tanida, Shinji; Noda, Kei; Kawabata, Hiroshi; Matsushige, Kazumi

    2009-01-01

    N-channel operation of thin-film transistors based on 1,4,5,8-naphthalene tetracarboxylic dianhydride (NTCDA) with a 9-nm-thick poly(methyl methacrylate) (PMMA) gate buffer layer was examined. The uniform coverage of the ultrathin PMMA layer on an SiO 2 gate insulator, verified by X-ray reflectivity measurement, caused the increase of electron field-effect mobility because of the suppression of electron traps existing on the SiO 2 surface. In addition, air stability for n-channel operation of the NTCDA transistor was also improved by the PMMA layer which possibly prevented the adsorption of ambient water molecules onto the SiO 2 surface.

  9. Unified analytical threshold voltage model for non-uniformly doped dual metal gate fully depleted silicon-on-insulator MOSFETs

    Science.gov (United States)

    Rao, Rathnamala; Katti, Guruprasad; Havaldar, Dnyanesh S.; DasGupta, Nandita; DasGupta, Amitava

    2009-03-01

    The paper describes the unified analytical threshold voltage model for non-uniformly doped, dual metal gate (DMG) fully depleted silicon-on-insulator (FDSOI) MOSFETs based on the solution of 2D Poisson's equation. 2D Poisson's equation is solved analytically for appropriate boundary conditions using separation of variables technique. The solution is then extended to obtain the threshold voltage of the FDSOI MOSFET. The model is able to handle any kind of non-uniform doping, viz. vertical, lateral as well as laterally asymetric channel (LAC) profile in the SOI film in addition to the DMG structure. The analytical results are validated with the numerical simulations using the device simulator MEDICI.

  10. Investigation of Leakage Current Mechanisms in La2O3/SiO2/4H-SiC MOS Capacitors with Varied SiO2 Thickness

    Science.gov (United States)

    Wang, Yucheng; Jia, Renxu; Zhao, Yanli; Li, Chengzhan; Zhang, Yuming

    2016-11-01

    In this study, the material and electrical properties of La2O3/SiO2/4H-SiC metal-oxide-semiconductor (MOS) capacitors are systematically characterized. Thermal oxidization SiO2 with varying thickness (0 nm, 3.36 nm, 5 nm, 8 nm, and 30 nm) were coated with La2O3 using atomic layer deposition on n-type 4H-SiC. The stacking oxides were measured using atomic force microscopy, transmission electron microscopy, and x-ray photoelectron spectroscopy, and the MOS capacitors were measured by capacitance-voltage and current-voltage measurements. The results demonstrate that the main gate current leakage mechanisms are dependent on the thickness of the SiO2 oxide under the applied electric field. The primary mechanism for current leakage from the La2O3/4H-SiC MOS capacitor follows the Schottky emission mechanism due to its low conduction band offset. In contrast, the current leakage mechanism for the capacitor with a 3.36 nm SiO2 layer follows the Poole-Frenkel emission mechanism on account of its high trap charge density in the gate dielectric and at the interface. When the thickness of the SiO2 layer increases to 8 nm, lower leakage current is observed by reason of the low trap charge density and high conduction band offset when E ≤ 5 MV/cm. As the electric field strength increases to 5 MV/cm and 5.88 MV/cm (30 nm SiO2: 4.8 MV/cm), the main current leakage mechanism changes to the Fowler-Nordheim tunneling mechanism, which indicates that the La2O3/SiO2 stacking structure can improve the properties of MOS capacitors.

  11. Quantum and Classical Magnetoresistance in Ambipolar Topological Insulator Transistors with Gate-tunable Bulk and Surface Conduction

    Science.gov (United States)

    Tian, Jifa; Chang, Cuizu; Cao, Helin; He, Ke; Ma, Xucun; Xue, Qikun; Chen, Yong P.

    2014-01-01

    Weak antilocalization (WAL) and linear magnetoresistance (LMR) are two most commonly observed magnetoresistance (MR) phenomena in topological insulators (TIs) and often attributed to the Dirac topological surface states (TSS). However, ambiguities exist because these phenomena could also come from bulk states (often carrying significant conduction in many TIs) and are observable even in non-TI materials. Here, we demonstrate back-gated ambipolar TI field-effect transistors in (Bi0.04Sb0.96)2Te3 thin films grown by molecular beam epitaxy on SrTiO3(111), exhibiting a large carrier density tunability (by nearly 2 orders of magnitude) and a metal-insulator transition in the bulk (allowing switching off the bulk conduction). Tuning the Fermi level from bulk band to TSS strongly enhances both the WAL (increasing the number of quantum coherent channels from one to peak around two) and LMR (increasing its slope by up to 10 times). The SS-enhanced LMR is accompanied by a strongly nonlinear Hall effect, suggesting important roles of charge inhomogeneity (and a related classical LMR), although existing models of LMR cannot capture all aspects of our data. Our systematic gate and temperature dependent magnetotransport studies provide deeper insights into the nature of both MR phenomena and reveal differences between bulk and TSS transport in TI related materials. PMID:24810663

  12. Development of Microwave-Excited Plasma-Enhanced Metal-Organic Chemical Vapor Deposition System for Forming Ferroelectric Sr2(Ta1-x,Nbx)2O7 Thin Film on Amorphous SiO2

    Science.gov (United States)

    Takahashi, Ichirou; Funaiwa, Kiyoshi; Azumi, Keita; Yamashita, Satoru; Shirai, Yasuyuki; Hirayama, Masaki; Teramoto, Akinobu; Sugawa, Shigetoshi; Ohmi, Tadahiro

    2007-04-01

    Sr2(Ta1-x,Nbx)2O7 (STN; x = 0.3) is suitable for use as ferroelectric gate field-effect transistors (FETs) for one-transistor-type ferroelectric memory devices, because it has a low dielectric constant. For applications using metal-ferroelectric-insulator-semiconductor (MFIS) FETs, crystallization of ferroelectric film on insulator is necessary. Perovskite STN can be successfully obtained on amorphous SiO2 by ferroelectric-multilayer-stack (FMLS) deposition, which uses alternating steps of STN sputtering deposition and oxygen radical treatment. In this study, we report on a newly developed microwave-excited plasma-enhanced metal-organic chemical vapor deposition (MOCVD) system, in which STN can be deposited in radical oxygen atmosphere. We succeeded in the fabrication of STN on amorphous SiO2 in a single process. The IrO2/STN (200 nm)/SiO2 (10 nm)/p-type Si device shows capacitance-voltage (C-V) hysteresis curves and a memory window of 1.2 V with a 5 V writing operation.

  13. Poly(4-vinylphenol gate insulator with cross-linking using a rapid low-power microwave induction heating scheme for organic thin-film-transistors

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2016-03-01

    Full Text Available A Microwave-Induction Heating (MIH scheme is proposed for the poly(4-vinylphenol (PVP gate insulator cross-linking process to replace the traditional oven heating cross-linking process. The cross-linking time is significantly decreased from 1 h to 5 min by heating the metal below the PVP layer using microwave irradiation. The necessary microwave power was substantially reduced to about 50 W by decreasing the chamber pressure. The MIH scheme is a good candidate to replace traditional thermal heating for cross-linking of PVP as the gate insulator for organic thin-film-transistors.

  14. Processing and performance of organic insulators as a gate layer in ...

    Indian Academy of Sciences (India)

    methylmethacrylate) (PMMA), as a gate layer in pentacene-based organic thin film transistor on PET substrate. We have used thermogravimetric analysis of organic dielectric solution to determine annealing temperature for spin-coated films of these dielectrics.

  15. Enhanced Miller plateau characteristics of a 4H-SiC insulated-gate bipolar transistor in the presence of interface traps

    Science.gov (United States)

    Navarro, Dondee; Tone, Akihiro; Kikuchihara, Hideyuki; Morikawa, Yoji; Miura-Mattausch, Mitiko

    2017-04-01

    Miller plateau characteristics of a 4H-SiC insulated-gate bipolar transistor (IGBT) is investigated during a gate voltage turn-on under the presence of interface carrier traps at the MOSFET gate oxide. The plateau, which is observed in the device gate-emitter voltage, increased with respect to both height and length. The plateau height is mainly determined by the density increase of trap states, which also causes slow charging of the gate capacitance in the overlap region that results in a longer plateau length. The shallow trap states contribute mainly to the plateau increase. It is observed that the switching loss at turn-on can increase by more than 60% due mainly to the carrier traps at the shallow trap states.

  16. Suspended graphene devices with local gate control on an insulating substrate

    International Nuclear Information System (INIS)

    Ong, Florian R; Cui, Zheng; Vojvodin, Cameron; Papaj, Michał; Deng, Chunqing; Bal, Mustafa; Lupascu, Adrian; Yurtalan, Muhammet A; Orgiazzi, Jean-Luc F X

    2015-01-01

    We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The devices are built on a bare high-resistivity silicon substrate. At temperatures of 77 K and below, we observe the field-effect modulation of the graphene resistivity by a voltage applied to the gate. This fabrication approach enables new experiments involving graphene-based superconducting qubits and nano-electromechanical resonators. The method is applicable to other two-dimensional materials. (paper)

  17. Microporous SiO2 with huge electric-double-layer capacitance for low-voltage indium tin oxide thin-film transistors

    International Nuclear Information System (INIS)

    Lu Aixia; Sun Jia; Jiang Jie; Wan Qing

    2009-01-01

    Electric-double-layer (EDL) effect is observed in microporous SiO 2 dielectric films deposited at room temperature by plasma-enhanced chemical vapor deposition method. Indium tin oxide thin-film transistors gated by such microporous SiO 2 gate dielectric are fabricated at room temperature, and a low operating voltage of 1.5 V is obtained due to the huge EDL specific capacitance (2.14 μF/cm 2 ). The field-effect electron mobility is estimated to be 118 cm 2 V -1 s -1 . Current on/off ratio and subthreshold gate voltage swing are estimated to be 5x10 6 and 92 mV/decade, respectively. Room-temperature deposited microporous SiO 2 dielectric is promising for low-power field-effect transistors on temperature sensitive substrates.

  18. A 65-kV insulated gate bipolar transistor switch applied in damped AC voltages partial discharge detection system.

    Science.gov (United States)

    Jiang, J; Ma, G M; Luo, D P; Li, C R; Li, Q M; Wang, W

    2014-02-01

    Damped AC voltages detection system (DAC) is a productive way to detect the faults in power cables. To solve the problems of large volume, complicated structure and electromagnetic interference in existing switches, this paper developed a compact solid state switch based on electromagnetic trigger, which is suitable for DAC test system. Synchronous electromagnetic trigger of 32 Insulated Gate Bipolar Transistors (IGBTs) in series was realized by the topological structure of single line based on pulse width modulation control technology. In this way, external extension was easily achieved. Electromagnetic trigger and resistor-capacitor-diode snubber circuit were optimized to reduce the switch turn-on time and circular layout. Epoxy encapsulating was chosen to enhance the level of partial discharge initial voltage (PDIV). The combination of synchronous trigger and power supply is proposed to reduce the switch volume. Moreover, we have overcome the drawback of the electromagnetic interference and improved the detection sensitivity of DAC by using capacitor storage energy to maintain IGBT gate driving voltage. The experimental results demonstrated that the solid-state switch, with compact size, whose turn-on time was less than 400 ns and PDIV was more than 65 kV, was able to meet the actual demands of 35 kV DAC test system.

  19. Fluorinated copper-phthalocyanine-based n-type organic field-effect transistors with a polycarbonate gate insulator

    International Nuclear Information System (INIS)

    Sethuraman, Kunjithapatham; Kumar, Palanisamy; Santhakumar, Kannappan; Ochiai, Shizuyasu; Shin, Paikkyun

    2012-01-01

    Fluorinated copper-phthalocyanine (F 16 CuPc) thin films were prepared by using a vacuum evaporation technique and were applied to n-type organic field-effect transistors (OFETs) as active channel layers combined with a spin-coated polycarbonate thin-film gate insulator. The output characteristics of the resulting n-type OFET devices with bottom-gate/bottom-contact structures were investigated to evaluate the performances such as the field effect mobility (μ FE ), the on/off current ratio (I on/off ), and the threshold voltage (V th ). A relatively high field effect mobility of 6.0 x 10 -3 cm 2 /Vs was obtained for the n-type semiconductor under atmospheric conditions with an on/off current ratio of 1 x 10 4 and a threshold voltage of 5 V. The electron mobility of the n-type semiconductor was found to depend strongly on the growth temperature of the F 16 CuPc thin films. X-ray diffraction profiles showed that the crystallinity and the orientation of the F 16 CuPc on a polycarbonate thin film were enhanced with increasing growth temperature. Atomic force microscopy studies revealed various surface morphologies of the active layer. The field effect mobility of the F 16 CuPc-OFET was closely related to the crystallinity and the orientation of the F 16 CuPc thin film.

  20. High performance organic field-effect transistors with ultra-thin HfO{sub 2} gate insulator deposited directly onto the organic semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Ono, S., E-mail: shimpei@criepi.denken.or.jp [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan); Häusermann, R. [Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511 (Japan); Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland); Chiba, D. [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); PRESTO, Japan Science and Technology Agency, 4-1-8 Honcho Kawaguchi, Saitama 322-0012 (Japan); Department of Applied Physics, University of Tokyo, Tokyo 113-8656 (Japan); Shimamura, K.; Ono, T. [Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011 (Japan); Batlogg, B. [Laboratory for Solid State Physics, ETH Zurich, Zurich 8093 (Switzerland)

    2014-01-06

    We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO{sub 2} gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm{sup 2}/V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO{sub 2} layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor.

  1. New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

    Science.gov (United States)

    Te-Kuang Chiang,

    2010-07-01

    Using the exact solution of the two-dimensional Poisson equation, a new analytical model comprising two-dimensional potential and threshold voltage for short-channel fully depleted dual-material-gate silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed. The model shows that the minimum acceptable channel length can be sustained while repressing the short-channel effects if a thin gate oxide and a thin silicon body are employed in the device. Moreover, by increasing the ratio of the screen gate length to control gate length, the threshold voltage roll-off can be more effectively reduced. The model is verified by the close agreement of its results with those of a numerical simulation using the device simulator MEDICI. The model not only offers an insight into the device physics but is also an efficient model for circuit simulation.

  2. Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors.

    Science.gov (United States)

    Lee, W; Su, P

    2009-02-11

    This paper systematically presents controlled single-electron effects in multiple-gate silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) with various gate lengths, fin widths, gate bias and temperature. Our study indicates that using the non-overlapped gate to source/drain structure as an approach to the single-electron transistor (SET) in MOSFETs is promising. Combining the advantage of gate control and the constriction of high source/drain resistances, single-electron effects are further enhanced using the multiple-gate architecture. From the presented results, downsizing multiple-gate SOI MOSFETs is needed for future room-temperature SET applications. Besides, the tunnel barriers and access resistances may need to be further optimized. Since the Coulomb blockade oscillation can be achieved in state-of-the-art complementary metal-oxide-semiconductor (CMOS) devices, it is beneficial to build SETs in low-power CMOS circuits for ultra-high-density purposes.

  3. Ambipolar insulator-to-metal transition in black phosphorus by ionic-liquid gating.

    Science.gov (United States)

    Saito, Yu; Iwasa, Yoshihiro

    2015-03-24

    We report ambipolar transport properties in black phosphorus using an electric-double-layer transistor configuration. The transfer curve clearly exhibits ambipolar transistor behavior with an ON-OFF ratio of ∼5 × 10(3). The band gap was determined as ≅0.35 eV from the transfer curve, and Hall-effect measurements revealed that the hole mobility was ∼190 cm(2)/(V s) at 170 K, which is 1 order of magnitude larger than the electron mobility. By inducing an ultrahigh carrier density of ∼10(14) cm(-2), an electric-field-induced transition from the insulating state to the metallic state was realized, due to both electron and hole doping. Our results suggest that black phosphorus will be a good candidate for the fabrication of functional devices, such as lateral p-n junctions and tunnel diodes, due to the intrinsic narrow band gap.

  4. Flexible high-κ/Metal gate metal/insulator/metal capacitors on silicon (100) fabric

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-10-01

    Implementation of memory on bendable substrates is an important step toward a complete and fully developed notion of mechanically flexible computational systems. In this paper, we have demonstrated a simple fabrication flow to build metal-insulator-metal capacitors, key components of dynamic random access memory, on a mechanically flexible silicon (100) fabric. We rely on standard microfabrication processes to release a thin sheet of bendable silicon (area: 18 {\\ m cm}2 and thickness: 25 \\\\mu{\\ m m}) in an inexpensive and reliable way. On such platform, we fabricated and characterized the devices showing mechanical robustness (minimum bending radius of 10 mm at an applied strain of 83.33% and nominal strain of 0.125%) and consistent electrical behavior regardless of the applied mechanical stress. Furthermore, and for the first time, we performed a reliability study suggesting no significant difference in performance and showing an improvement in lifetime projections. © 1963-2012 IEEE.

  5. Fluorinated copper-phthalocyanine-based n-type organic field-effect transistors with a polycarbonate gate insulator

    Energy Technology Data Exchange (ETDEWEB)

    Sethuraman, Kunjithapatham [Madurai Kamaraj University, Madurai (India); Kumar, Palanisamy; Santhakumar, Kannappan; Ochiai, Shizuyasu [Aichi Institute of Technology, Toyota City (Japan); Shin, Paikkyun [Inha University, Incheon (Korea, Republic of)

    2012-07-15

    Fluorinated copper-phthalocyanine (F{sub 16}CuPc) thin films were prepared by using a vacuum evaporation technique and were applied to n-type organic field-effect transistors (OFETs) as active channel layers combined with a spin-coated polycarbonate thin-film gate insulator. The output characteristics of the resulting n-type OFET devices with bottom-gate/bottom-contact structures were investigated to evaluate the performances such as the field effect mobility (μ{sub FE}), the on/off current ratio (I{sub on/off}), and the threshold voltage (V{sub th}). A relatively high field effect mobility of 6.0 x 10{sup -3} cm{sup 2}/Vs was obtained for the n-type semiconductor under atmospheric conditions with an on/off current ratio of 1 x 10{sup 4} and a threshold voltage of 5 V. The electron mobility of the n-type semiconductor was found to depend strongly on the growth temperature of the F{sub 16}CuPc thin films. X-ray diffraction profiles showed that the crystallinity and the orientation of the F{sub 16}CuPc on a polycarbonate thin film were enhanced with increasing growth temperature. Atomic force microscopy studies revealed various surface morphologies of the active layer. The field effect mobility of the F{sub 16}CuPc-OFET was closely related to the crystallinity and the orientation of the F{sub 16}CuPc thin film.

  6. Improvement of Switching Speed of a 600-V Nonpunch-Through Insulated Gate Bipolar Transistor Using Fast Neutron Irradiation

    Directory of Open Access Journals (Sweden)

    Ha Ni Baek

    2017-02-01

    Full Text Available Fast neutron irradiation was used to improve the switching speed of a 600-V nonpunch-through insulated gate bipolar transistor. Fast neutron irradiation was carried out at 30-MeV energy in doses of 1 × 108 n/cm2, 1 × 109 n/cm2, 1 × 1010 n/cm2, and 1 × 1011 n/cm2. Electrical characteristics such as current–voltage, forward on-state voltage drop, and switching speed of the device were analyzed and compared with those prior to irradiation. The on-state voltage drop of the initial devices prior to irradiation was 2.08 V, which increased to 2.10 V, 2.20 V, 2.3 V, and 2.4 V, respectively, depending on the irradiation dose. This effect arises because of the lattice defects generated by the fast neutrons. In particular, the turnoff delay time was reduced to 92 nanoseconds, 45% of that prior to irradiation, which means there is a substantial improvement in the switching speed of the device.

  7. A Fast-Acting Diagnostic Algorithm of Insulated Gate Bipolar Transistor Open Circuit Faults for Power Inverters in Electric Vehicles

    Directory of Open Access Journals (Sweden)

    Lei Yu

    2017-04-01

    Full Text Available To improve the diagnostic detection speed in electric vehicles, a novel diagnostic algorithm of insulated gate bipolar transistor (IGBT open circuit faults for power inverters is proposed in this paper. The average of the difference between the actual three-phase current and referential three-phase current values over one electrical period is used as the diagnostic variable. The normalization method based on the amplitude of the d-q axis referential current is applied to the diagnostic variables to improve the response speed of diagnosis, and to avoid the noise and the delay caused by signal acquisition. In the parameter discretization process, the variable parameter moving average method (VPMAM is adopted to solve the variation of the average value over a period with the speed of the motor; hence, the diagnostic reliability of the system is improved. This algorithm is robust, independent of load variations, and has a high resistivity against false alarms. Since only the three-phase current of the motor is utilized for calculations in the time domain, a fast diagnostic detection speed can be achieved, which is significantly essential for real-time control in electric vehicles. The effectiveness of the proposed algorithm is verified by both simulation and experimental results.

  8. High performance a-IGZO thin-film transistors with mf-PVD SiO2 as an etch-stop-layer

    NARCIS (Netherlands)

    Nag, M.; Steudel, S.; Bhoolokam, A.; Chasin, A.; Rockele, M.; Myny, K.; Maas, J.; Fritz, T.; Trube, J.; Groeseneken, G.; Heremans, P.

    2014-01-01

    In this work, we report on high-performance bottom-gate top-contact (BGTC) amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with SiO2 as an etch-stop-layer (ESL) deposited by medium frequency physical vapor deposition (mf-PVD). The TFTs show field-effect mobility (μFE) of

  9. Cylindrical gate all around Schottky barrier MOSFET with insulated shallow extensions at source/drain for removal of ambipolarity: a novel approach

    Science.gov (United States)

    Kumar, Manoj; Pratap, Yogesh; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

    2017-12-01

    In this paper TCAD-based simulation of a novel insulated shallow extension (ISE) cylindrical gate all around (CGAA) Schottky barrier (SB) MOSFET has been reported, to eliminate the suicidal ambipolar behavior (bias-dependent OFF state leakage current) of conventional SB-CGAA MOSFET by blocking the metal-induced gap states as well as unwanted charge sharing between source/channel and drain/channel regions. This novel structure offers low barrier height at the source and offers high ON-state current. The I ON/I OFF of ISE-CGAA-SB-MOSFET increases by 1177 times and offers steeper subthreshold slope (~60 mV/decade). However a little reduction in peak cut off frequency is observed and to further improve the cut-off frequency dual metal gate architecture has been employed and a comparative assessment of single metal gate, dual metal gate, single metal gate with ISE, and dual metal gate with ISE has been presented. The improved performance of Schottky barrier CGAA MOSFET by the incorporation of ISE makes it an attractive candidate for CMOS digital circuit design. The numerical simulation is performed using the ATLAS-3D device simulator.

  10. Stability Study of Flexible 6,13-Bis(triisopropylsilylethynylpentacene Thin-Film Transistors with a Cross-Linked Poly(4-vinylphenol/Yttrium Oxide Nanocomposite Gate Insulator

    Directory of Open Access Journals (Sweden)

    Jin-Hyuk Kwon

    2016-03-01

    Full Text Available We investigated the electrical and mechanical stability of flexible 6,13-bis(triisopropylsilylehtynylpentacene (TIPS-pentacene thin-film transistors (TFTs that were fabricated on polyimide (PI substrates using cross-linked poly(4-vinylphenol (c-PVP and c-PVP/yttrium oxide (Y2O3 nanocomposite films as gate insulators. Compared with the electrical characteristics of TIPS-pentacene TFTs with c-PVP insulators, the TFTs with c-PVP/Y2O3 nanocomposite insulators exhibited enhancements in the drain current and the threshold voltage due to an increase in the dielectric capacitance. In electrical stability experiments, a gradual decrease in the drain current and a negative shift in the threshold voltage occurred during prolonged bias stress tests, but these characteristic variations were comparable for both types of TFT. On the other hand, the results of mechanical bending tests showed that the characteristic degradation of the TIPS-pentacene TFTs with c-PVP/Y2O3 nanocomposite insulators was more critical than that of the TFTs with c-PVP insulators. In this study, the detrimental effect of the nanocomposite insulator on the mechanical stability of flexible TIPS-pentacene TFTs was found to be caused by physical adhesion of TIPS-pentacene molecules onto the rough surfaces of the c-PVP/Y2O3 nanocomposite insulator. These results indicate that the dielectric and morphological properties of polymeric nanocomposite insulators are significant when considering practical applications of flexible electronics operated at low voltages.

  11. Statistical Design of Ultra-Thin SiO2 for Nano devices

    International Nuclear Information System (INIS)

    Hashim, U.; Abdul-Fatah, M.F.A.; Ahmad, I.; Majlis, B.Y.

    2009-01-01

    A study was performed on a series of ultra thin SiO 2 films in order to determine the factors affecting the oxide growth and also the effect of temperature to the film surface roughness. The samples of ultra thin SiO 2 were prepared through a dry oxidation method using a high temperature furnace. There are three levels of temperature used, that is 900, 950 and 1000 degree Celsius and the samples were grown at 0.333 litre/ min, 0.667 liter/ min and 1 liter/ min oxygen flow rate and different oxidation times of 1, 2 and 3 minutes. The thickness was determined using an ellipsometers and the micro morphology of the oxide surface was obtained by using an atomic force microscope (AFM). The thickness of the oxide ranged from 1 to 5 nm. All the data has been interpreted using Taguchi's method to analyze the most affecting factors in producing an ultra thin silicon dioxide. The optimum parameters are 900 degree Celsius, 0.333 litre/ min and at 1 minute time. The most influential parameter is temperature. The temperature also affects the surface roughness. The AFM result of 950 degree Celsius with RMS value of 0.1088 nm is better than the 900 degree Celsius oxide with RMS value 0.4553 nm. This shows that oxides need to be grown at a higher temperature to provide better surface roughness which is also important in ultra thin gate oxide characteristics. (author)

  12. Observing the semiconducting band-gap alignment of MoS2 layers of different atomic thicknesses using a MoS2/SiO2/Si heterojunction tunnel diode

    NARCIS (Netherlands)

    Nishiguchi, K.; Castellanos-Gomez, A.; Yamaguchi, H.; Fujiwara, A.; Van der Zant, H.S.J.; Steele, G.A.

    2015-01-01

    We demonstrate a tunnel diode composed of a vertical MoS2/SiO2/Si heterostructure. A MoS2 flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS2 layers and

  13. Ultra-thin films of polysilsesquioxanes possessing 3-methacryloxypropyl groups as gate insulator for organic field-effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Nakahara, Yoshio; Kawa, Haruna [Department of Applied Chemistry, Faculty of Systems Engineering, Wakayama University, 930 Sakae-dani, Wakayama 640-8510 (Japan); Yoshiki, Jun [Division of Information and Electronic Engineering, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran 050-8585 (Japan); Kumei, Maki; Yamamoto, Hiroyuki; Oi, Fumio [Konishi Chemical IND. Co., LTD., 3-4-77 Kozaika, Wakayama 641-0007 (Japan); Yamakado, Hideo [Department of Applied Chemistry, Faculty of Systems Engineering, Wakayama University, 930 Sakae-dani, Wakayama 640-8510 (Japan); Fukuda, Hisashi [Division of Engineering for Composite Functions, Faculty of Engineering, Muroran Institute of Technology, 27-1 Mizumoto-cho, Muroran 050-8585 (Japan); Kimura, Keiichi, E-mail: kkimura@center.wakayama-u.ac.jp [Department of Applied Chemistry, Faculty of Systems Engineering, Wakayama University, 930 Sakae-dani, Wakayama 640-8510 (Japan)

    2012-10-01

    Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups as an organic moiety of the side chain were synthesized by sol-gel condensation copolymerization of the corresponding trialkoxysilanes. The ultra-thin PSQ film with a radical initiator and a cross-linking agent was prepared by a spin-coating method, and the film was cured integrally at low temperatures of less than 120 Degree-Sign C through two different kinds of polymeric reactions, which were radical polymerization of vinyl groups and sol-gel condensation polymerization of terminated silanol and alkoxy groups. The obtained PSQ film showed the almost perfect solubilization resistance to acetone, which is a good solvent of PSQ before polymerization. It became clear by atomic force microscopy observation that the surface of the PSQ film was very smooth at a nano-meter level. Furthermore, pentacene-based organic field-effect transistor (OFET) with the PSQ film as a gate insulator showed typical p-channel enhancement mode operation characteristics and therefore the ultra-thin PSQ film has the potential to be applicable for solution-processed OFET systems. - Highlights: Black-Right-Pointing-Pointer Polysilsesquioxanes (PSQs) possessing 3-methacryloxypropyl groups were synthesized. Black-Right-Pointing-Pointer The ultra-thin PSQ film could be cured at low temperatures of less than 120 Degree-Sign C. Black-Right-Pointing-Pointer The PSQ film showed the almost perfect solubilization resistance to organic solvent. Black-Right-Pointing-Pointer The surface of the PSQ film was very smooth at a nano-meter level. Black-Right-Pointing-Pointer Pentacene-based organic field-effect transistor with the PSQ film was fabricated.

  14. Simulation of Electrical Parameters for Ru/Ta2O5/SiO2/Si(p High-k MOS Structure

    Directory of Open Access Journals (Sweden)

    Juraj Racko

    2008-01-01

    Full Text Available The contribution presents the results of simulation of direct tunnelling of free charge carriers through a thin gateinsulator in MOS structures consisting of a Ta2O5/SiO2 bilayer taking into account also indirect tunnelling of free chargecarriers through the SiO2/Si interface traps. The calculated I–V and C–V curves reveal the processes of electron and holetunnelling through the insulator-to-semiconductor potential barrier that can be divided into four classes.

  15. Investigating compositional effects of atomic layer deposition ternary dielectric Ti-Al-O on metal-insulator-semiconductor heterojunction capacitor structure for gate insulation of InAlN/GaN and AlGaN/GaN

    Energy Technology Data Exchange (ETDEWEB)

    Colon, Albert; Stan, Liliana; Divan, Ralu; Shi, Junxia

    2016-11-01

    Gate insulation/surface passivation in AlGaN/GaN and InAlN/GaN heterojunction field-effect transistors is a major concern for passivation of surface traps and reduction of gate leakage current. However, finding the most appropriate gate dielectric materials is challenging and often involves a compromise of the required properties such as dielectric constant, conduction/valence band-offsets, or thermal stability. Creating a ternary compound such as Ti-Al-O and tailoring its composition may result in a reasonably good gate material in terms of the said properties. To date, there is limited knowledge of the performance of ternary dielectric compounds on AlGaN/GaN and even less on InAlN/GaN. To approach this problem, the authors fabricated metal-insulator-semiconductor heterojunction (MISH) capacitors with ternary dielectrics Ti-Al-O of various compositions, deposited by atomic layer deposition (ALD). The film deposition was achieved by alternating cycles of TiO2 and Al2O3 using different ratios of ALD cycles. TiO2 was also deposited as a reference sample. The electrical characterization of the MISH capacitors shows an overall better performance of ternary compounds compared to the pure TiO2. The gate leakage current density decreases with increasing Al content, being similar to 2-3 orders of magnitude lower for a TiO2:Al2O3 cycle ratio of 2:1. Although the dielectric constant has the highest value of 79 for TiO2 and decreases with increasing the number of Al2O3 cycles, it is maintaining a relatively high value compared to an Al2O3 film. Capacitance voltage sweeps were also measured in order to characterize the interface trap density. A decreasing trend in the interface trap density was found while increasing Al content in the film. In conclusion, our study reveals that the desired high-kappa properties of TiO2 can be adequately maintained while improving other insulator performance factors. The ternary compounds may be an excellent choice as a gate material for both

  16. Synthesis and Characterization of Monodisperse Metallodielectric SiO2@Pt@SiO2 Core-Shell-Shell Particles.

    Science.gov (United States)

    Petrov, Alexey; Lehmann, Hauke; Finsel, Maik; Klinke, Christian; Weller, Horst; Vossmeyer, Tobias

    2016-01-26

    Metallodielectric nanostructured core-shell-shell particles are particularly desirable for enabling novel types of optical components, including narrow-band absorbers, narrow-band photodetectors, and thermal emitters, as well as new types of sensors and catalysts. Here, we present a facile approach for the preparation of submicron SiO2@Pt@SiO2 core-shell-shell particles. As shown by transmission and scanning electron microscopy, the first steps of this approach allow for the deposition of closed and almost perfectly smooth platinum shells onto silica cores via a seeded growth mechanism. By choosing appropriate conditions, the shell thickness could be adjusted precisely, ranging from ∼3 to ∼32 nm. As determined by X-ray diffraction, the crystalline domain sizes of the polycrystalline metal shells were ∼4 nm, regardless of the shell thickness. The platinum content of the particles was determined by atomic absorption spectroscopy and for thin shells consistent with a dense metal layer of the TEM-measured thickness. In addition, we show that the roughness of the platinum shell strongly depends on the storage time of the gold seeds used to initiate reductive platinum deposition. Further, using polyvinylpyrrolidone as adhesion layer, it was possible to coat the metallic shells with very homogeneous and smooth insulating silica shells of well-controlled thicknesses between ∼2 and ∼43 nm. After depositing the particles onto silicon substrates equipped with interdigitated electrode structures, the metallic character of the SiO2@Pt particles and the insulating character of the SiO2 shells of the SiO2@Pt@SiO2 particles were successfully demonstrated by charge transport measurements at variable temperatures.

  17. Synthesis of metallic nanoparticles in SiO2 matrices

    International Nuclear Information System (INIS)

    Gutierrez W, C.; Mondragon G, G.; Perez H, R.; Mendoza A, D.

    2004-01-01

    Metallic nanoparticles was synthesized in SiO 2 matrices by means of a process of two stages. The first one proceeded via sol-gel, incorporating the metallic precursors to the reaction system before the solidification of the matrix. Later on, the samples underwent a thermal treatment in atmosphere of H 2 , carrying out the reduction of the metals that finally formed to the nanoparticles. Then it was detected the presence of smaller nanoparticles than 20 nm, dispersed and with the property of being liberated easily of the matrix, conserving a free surface, chemically reactive and with response to external electromagnetic radiation. The system SiO 2 -Pd showed an important thermoluminescent response. (Author)

  18. Positive magnetoresistance in Co40Fe40B20/SiO2/Si heterostructure

    KAUST Repository

    Zhang, Y.

    2016-07-20

    Current-perpendicular-to-plane electronic transport properties and magnetoresistance of amorphous Co40Fe40B20/SiO2/Si heterostructures are investigated systematically. A backward diode-like rectifying behavior was observed due to the formation of a Schottky barrier between Co40Fe40B20 and Si. The junction resistance shows a metal-insulator transition with decreasing temperature in both the forward and reverse ranges. A large positive magnetoresistance (MR) of ∼2300% appears at 200 K. The positive MR can be attributed to the magnetic-field-controlled impact ionization process of carriers. MR shows a temperature-peak-type character under a constant bias current, which is related to the spin-dependent barrier in the Si near the interface. © CopyrightEPLA, 2016.

  19. Adsorption of uranyl in SiO2 porous glass

    International Nuclear Information System (INIS)

    Benedetto, F. E.; Prado, M. O.

    2013-01-01

    Vitreous SiO 2 porous matrices can be used in many applications involving the uptake of chemical species on its solid surface. In this work, vitreous silica sponges were prepared from a sodium borosilicate glass manufactured in our laboratory. The product obtained was then separated into phases with subsequent leaching of the soluble phase rich in B and Na. The resulting porous matrices have a specific surface of 35 m2/gr. Adsorption of uranyl ions onto the SiO 2 porous surface was studied to evaluate the use of this material as a filter for treatment of uranium containing water. The effects of contact time, adsorbent mass and equilibrium concentration of solution were studied. The porous adsorbent exhibits a pseudo-second-order kinetic behavior. The sponges with adsorbed uranium were thermally sealed as a way of U immobilization. Retention of uranium was confirmed during the matrix sealing by TGA. Uranium concentration before and after adsorption tests were made by means of ICP-OES. For uranium concentration of 800 ppm, 72 hours contact time and pH of 3.5, the amount of uranium adsorbed was 21.06 ± 0.02 mg U per gram of vitreous porous SiO 2 . (author)

  20. Application of high-quality SiO2 grown by multipolar ECR source to Si/SiGe MISFET

    Science.gov (United States)

    Sung, K. T.; Li, W. Q.; Li, S. H.; Pang, S. W.; Bhattacharya, P. K.

    1993-01-01

    A 5 nm-thick SiO2 gate was grown on an Si(p+)/Si(0.8)Ge(0.2) modulation-doped heterostructure at 26 C with an oxygen plasma generated by a multipolar electron cyclotron resonance source. The ultrathin oxide has breakdown field above 12 MV/cm and fixed charge density about 3 x 10 exp 10/sq cm. Leakage current as low as 1/micro-A was obtained with the gate biased at 4 V. The MISFET with 0.25 x 25 sq m gate shows maximum drain current of 41.6 mA/mm and peak transconductance of 21 mS/mm.

  1. Electrical analysis of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors on flexible bulk mono-crystalline silicon

    KAUST Repository

    Ghoneim, Mohamed T.

    2015-06-01

    We report on the electrical study of high dielectric constant insulator and metal gate metal oxide semiconductor capacitors (MOSCAPs) on a flexible ultra-thin (25 μm) silicon fabric which is peeled off using a CMOS compatible process from a standard bulk mono-crystalline silicon substrate. A lifetime projection is extracted using statistical analysis of the ramping voltage (Vramp) breakdown and time dependent dielectric breakdown data. The obtained flexible MOSCAPs operational voltages satisfying the 10 years lifetime benchmark are compared to those of the control MOSCAPs, which are not peeled off from the silicon wafer. © 2014 IEEE.

  2. Study of an Insulated Gate Bipolar Transistor (IGBT) and its connection in series. Application at a chopper 1500V-5A-10kHz

    International Nuclear Information System (INIS)

    Gros, P.

    1993-01-01

    In the frame of the tokamak ITER (International Thermonuclear Experimental Reactor) we have studied, for neutral particle injection, a converter with at least two static interrupters by Mosfet transistor, bipolar transistor or Insulated Gate Bipolar Transistor (IGBT). After a comparison between these three types of transistors, by the simulating software MICROCAP, a serial of tests has shown the advantages of the IGBT. A command, associated with two IGBT of equivalent characteristics, has given a simple and efficacious solution. The performances are: (1) between two blockages: 50 ns without overvoltage, (2) between two cut-off: 60 ns. 40 figs; 30 refs; 10 annexes

  3. A New Analytical Subthreshold Behavior Model for Single-Halo, Dual-Material Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

    Science.gov (United States)

    Chiang, Te-Kuang

    2008-11-01

    On the basis of the exact solution of the two-dimensional Poisson equation, a new analytical subthreshold behavior model consisting of the two-dimensional potential, threshold voltage, and subthreshold current for the single-halo, dual-material gate (SHDMG) silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) is developed. The model is verified by the good agreement with a numerical simulation using the device simulator MEDICI. The model not only offers a physical insight into device physics but is also an efficient device model for the circuit simulation.

  4. Gate-control efficiency and interface state density evaluated from capacitance-frequency-temperature mapping for GaN-based metal-insulator-semiconductor devices

    International Nuclear Information System (INIS)

    Shih, Hong-An; Kudo, Masahiro; Suzuki, Toshi-kazu

    2014-01-01

    We present an analysis method for GaN-based metal-insulator-semiconductor (MIS) devices by using capacitance-frequency-temperature (C-f-T) mapping to evaluate the gate-control efficiency and the interface state density, both exhibiting correlations with the linear-region intrinsic transconductance. The effectiveness of the method was exemplified by application to AlN/AlGaN/GaN MIS devices to elucidate the properties of AlN-AlGaN interfaces depending on their formation processes. Using the C-f-T mapping, we extract the gate-bias-dependent activation energy with its derivative giving the gate-control efficiency, from which we evaluate the AlN-AlGaN interface state density through the Lehovec equivalent circuit in the DC limit. It is shown that the gate-control efficiency and the interface state density have correlations with the linear-region intrinsic transconductance, all depending on the interface formation processes. In addition, we give characterization of the AlN-AlGaN interfaces by using X-ray photoelectron spectroscopy, in relation with the results of the analysis

  5. Investigation of Rapid Low-Power Microwave-Induction Heating Scheme on the Cross-Linking Process of the Poly(4-vinylphenol for the Gate Insulator of Pentacene-Based Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Ching-Lin Fan

    2017-07-01

    Full Text Available In this study, a proposed Microwave-Induction Heating (MIH scheme has been systematically studied to acquire suitable MIH parameters including chamber pressure, microwave power and heating time. The proposed MIH means that the thin indium tin oxide (ITO metal below the Poly(4-vinylphenol (PVP film is heated rapidly by microwave irradiation and the heated ITO metal gate can heat the PVP gate insulator, resulting in PVP cross-linking. It is found that the attenuation of the microwave energy decreases with the decreasing chamber pressure. The optimal conditions are a power of 50 W, a heating time of 5 min, and a chamber pressure of 20 mTorr. When suitable MIH parameters were used, the effect of PVP cross-linking and the device performance were similar to those obtained using traditional oven heating, even though the cross-linking time was significantly decreased from 1 h to 5 min. Besides the gate leakage current, the interface trap state density (Nit was also calculated to describe the interface status between the gate insulator and the active layer. The lowest interface trap state density can be found in the device with the PVP gate insulator cross-linked by using the optimal MIH condition. Therefore, it is believed that the MIH scheme is a good candidate to cross-link the PVP gate insulator for organic thin-film transistor applications as a result of its features of rapid heating (5 min and low-power microwave-irradiation (50 W.

  6. Comparative study of Laser induce damage of HfO2/SiO2 and TiO2/SiO2 mirrors at 1064 nm.

    Science.gov (United States)

    Jiao, Hongfei; Ding, Tao; Zhang, Qian

    2011-02-28

    A comparative study of laser induced damage of HfO2/SiO2 and TiO2/SiO2 mirrors at 1064 nm has been carried out. One TiO2/SiO2 mirror with absorption of 300 ppm and two HfO2/SiO2 mirrors with absorption of 40 and 4.5 ppm were fabricated using electron beam evaporation method. For r-on-1 test, all HfO2/SiO2 mirrors with low average absorption are above 150 J/cm2 at 10 ns. However, the TiO2/SiO2 mirrors with high average absorption are just 9.5 J/cm2, which are probably due to the rather high absorption and rather low band gap energy. Meanwhile, all the samples were irradiated from front and back side respectively using the raster scan test mode. In case of front side irradiation, it is found that: for TiO2/SiO2 high reflectors, the representative damage morphologies are shallow pits that were probably caused by absorbing centers. However, for HfO2/SiO2 high reflectors, the dominant damage morphologies are micrometer-sized nodules ejected pits and the delamination initiating from the pits. The absorption of HfO2/SiO2 coatings is low enough to have minor influence on the laser damage resistance. In case of backside irradiation, the morphology of TiO2/SiO2 mirrors is mainly center melted pits that are thermal melting induced damage. Meanwhile, HfO2/SiO2 mirrors with isometrical fracture rings damage morphology are thermal induced stress damage.

  7. Characterization of Si nanocrystals into SiO2 matrix

    International Nuclear Information System (INIS)

    Gravalidis, C.; Logothetidis, S.; Hatziaras, N.; Laskarakis, A.; Tsiaoussis, I.; Frangis, N.

    2006-01-01

    Silicon nanocrystals (nc-Si) have gained great interest due to their excellent optical and electronic properties and their applications in optoelectronics. The aim of this work is the study of growth mechanism of nc-Si into a-SiO 2 matrix from SiO/SiO 2 multilayer annealing, using non-destructive and destructive techniques. The multilayer were grown by e-beam evaporation from SiO and SiO 2 materials and annealing at temperatures up to 1100 deg. C in N 2 atmosphere. X-rays reflectivity (XRR) and high resolution transmission electron microscopy (HRTEM) were used for the structural characterization and spectroscopic ellipsometry in IR (FTIRSE) energy region for the study of the bonding structure. The ellipsometric results gave a clear evidence of the formation of an a-SiO 2 matrix after the annealing process. The XRR data showed that the density is being increased in the range from 25 to 1100 deg. C. Finally, the HRTEM characterization proved the formation of nc-Si. Using the above results, we describe the growth mechanism of nc-Si into SiO 2 matrix under N 2 atmosphere

  8. Bacterial adherence to SiO2-based multifunctional bioceramics.

    Science.gov (United States)

    Kinnari, Teemu J; Esteban, Jaime; Gomez-Barrena, Enrique; Zamora, Nieves; Fernandez-Roblas, Ricardo; Nieto, Alejandra; Doadrio, Juan C; López-Noriega, Adolfo; Ruiz-Hernández, Eduardo; Arcos, Daniel; Vallet-Regí, María

    2009-04-01

    The bacterial adherence onto different multifunctional silica-based bioceramics has been evaluated. Staphylococcus aureus and Staphylococcus epidermidis were chosen, as they cause the majority of the implant-related infections in this field. Two SiO2 mesoporous materials (MCM-41, SBA-15), an ordered SiO2-CaO-P2O5 mesoporous glass (OMG), and a biphasic magnetic bioceramic (BMB), were incubated with S. aureus and S. epidermidis for 90 min, and subsequently sonicated to quantify the number of adhered bacteria on each material. It was found that S. aureus and S. epidermidis (10(8) CFU/mL) adhered significantly less to BMB samples when compared to MCM-41, SBA-15, or OMG. However, when the material pores accessible for bacteria in each material were taken into account, the lowest bacterial adherence was found in MCM-41, and the highest in SBA-15. The results show that bacterial adherence is higher on mesoporous bioceramics, although this higher microbial attachment is mainly due to the intergranular porosity and grain size morphology rather than to the mesoporous structure. Copyright 2008 Wiley Periodicals, Inc.

  9. Interactions of atomic hydrogen with amorphous SiO2

    Science.gov (United States)

    Yue, Yunliang; Wang, Jianwei; Zhang, Yuqi; Song, Yu; Zuo, Xu

    2018-03-01

    Dozens of models are investigated by the first-principles calculations to simulate the interactions of an atomic hydrogen with a defect-free random network of amorphous SiO2 (a-SiO2) and oxygen vacancies. A wide variety of stable configurations are discovered due to the disorder of a-SiO2, and their structures, charges, magnetic moments, spin densities, and density of states are calculated. The atomic hydrogen interacts with the defect-free a-SiO2 in positively or negatively charged state, and produces the structures absent in crystalline SiO2. It passivates the neutral oxygen vacancies and generates two neutral hydrogenated E‧ centers with different Si dangling bond projections. Electron spin resonance parameters, including Fermi contacts, and g-tensors, are calculated for these centers. The atomic hydrogen interacts with the positive oxygen vacancies in dimer configuration, and generate four different positive hydrogenated defects, two of which are puckered like the Eγ‧ centers. This research helps to understand the interactions between an atomic hydrogen, and defect-free a-SiO2 and oxygen vacancies, which may generate the hydrogen-complexed defects that play a key role in the degeneration of silicon/silica-based microelectronic devices.

  10. Dewetting induced Au-Ge composite nanodot evolution in SiO2

    Science.gov (United States)

    Datta, D. P.; Chettah, A.; Siva, V.; Kanjilal, D.; Sahoo, P. K.

    2018-01-01

    A composite nanostructure comprising of Au and Ge gradually evolves on SiO2 surface when a bilayer of Au and Ge is irradiated by medium keV Xe-ion beam. The morphology progresses through different stages from nucleating patches to extended islands and finally a Au-Ge composite nanodot array develops on the insulator surface. While ion energy and fluence are found to determine dimensions of the nanostructures, existence of a characteristic lateral length scale is also detected at every stage of evolution. Through morphological and compositional analysis, the observed evolution is understood as an effect of ion beam induced dewetting of Au top layer. Numerical estimation based on the unified thermal spike model using the present experimental condition demonstrates formation of molten zones around the ion track due to nuclear and electronic energy deposition in the target. Dewetting results from mass flow onto the surface driven by local melting along the ion track and combines with sputter erosion of the bilayer film to lead to composite nanodot evolution. The generality of the ion induced processes provides possible route towards metal-semiconductor hybrid nanostructure synthesis on insulator surface.

  11. Concentration effect of Tm3+ on cathodoluminescence properties of SiO2: Tm3+ and SiO2:Ho3+, Tm3+ systems

    CSIR Research Space (South Africa)

    Dhlamini, MS

    2012-05-01

    Full Text Available .physb.2011.09.091 Concentration effect of Tm3+ on cathodoluminescence properties of SiO2: Tm 3+ and SiO2:Ho 3+, Tm3+ systems M.S. Dhlamini, G.H. Mhlongo, H.C. Swart, O.M. Ntwaeaborwa, K.T. Hillie ABSTRACT: Cathodoluminescence (CL) properties of SiO...

  12. Effect of Commercial SiO2 and SiO2 from rice husk ash loading on biodegradation of Poly (lactic acid) and crosslinked Poly (lactic acid)

    Science.gov (United States)

    Prapruddivongs, C.; Apichartsitporn, M.; Wongpreedee, T.

    2017-09-01

    In this work, biodegradation behavior of poly (lactic acid) (PLA) and crosslinked PLA filled with two types of SiO2, precipitated SiO2 (commercial SiO2) and SiO2 from rice husk ash, were studied. Rice husks were first treated with 2 molar hydrochloric acid (HCl) to produce high purity SiO2, before burnt in a furnace at 800°C for 6 hours. All components were melted bending by an internal mixer then hot pressed using compression molder to form tested specimens. FTIR spectra of SiO2 and PLA samples were investigated. The results showed the lack of silanol group (Si-OH) of rice husk ash after steric acid surface modification, while the addition of particles can affect the crosslinking of the PLA. For biodegradation test by evaluating total amount of carbon dioxide (CO2) evolved during 60 days incubation at a controlled temperature of 58±2°C, the results showed that the biodegradation of crosslinked PLA occurred slower than the neat PLA. However, SiO2 incorporation enhanced the degree of biodegradation In particular, introducing commercial SiO2 in PLA and crosslinked PLA tended to clearly increase the degree of biodegradation as a consequence of the more accelerated hydrolysis degradation.

  13. Interface reactions at TiN/HfSiON gate stacks: Dependence on the electrode structure and deposition method

    Directory of Open Access Journals (Sweden)

    Shiniti Yoshida et al

    2007-01-01

    Full Text Available We systematically investigated intrinsic and extrinsic thermal reactions at TiN/HfSiON gate stacks. The formation of an ultrathin TiO2 interlayer was found to be an intrinsic reaction at the metal/insulator interface, but growth of SiO2 underlayers between HfSiON and Si substrates, which determines the electrical thickness of metal-oxide-semiconductor (MOS devices, depends on the structure and deposition method of the gate electrodes. Physical vapor deposition (PVD grown TiN electrodes covered with W overlayers exhibited excellent thermal stability at up to 1000 °C. Formation of ultrathin TiO2 interlayers reduced gate leakage current (Ig, and growth of the oxide underlayer was suppressed by less than a few angstroms even for 1000 °C annealing. In contrast, we found that halogen impurities within CVD-grown metal electrodes enhance interface SiO2 growth, resulting in deterioration of equivalent oxide thickness (EOT versus Ig characteristics of the gate stacks.

  14. Thermoluminescence of ion-implanted SiO2

    International Nuclear Information System (INIS)

    Arnold, G.W.

    1976-01-01

    Thermoluminescence (TL) has been measured from room temperature to 500 0 C for ion-implanted fused silica glasses, crystalline synthetic quartz and rf-sputtered SiO 2 films. Measurements of the TL spectra for widely varying values of electronic and atomic energy depositions, along with the known impurity concentrations of the various systems, has allowed some of the TL features to be identified. In particular, (1) a TL peak at 150 0 C in fused silica has been identified with defects formed by structural modification, (2) a 330 0 C peak in crystalline quartz and relatively impure fused silica is tentatively assigned to a center involving Al, (3) a 100 0 C peak, common to all silicas may be related to oxygen vacancies, and (4) an approximately 200 0 C peak may be the analog of the 245 nm impurity absorption band seen in some fused silica glasses

  15. Direct fabrication of hybrid nanofibres composed of SiO2-PMMA nanospheres via electrospinning.

    Science.gov (United States)

    Zhang, Ran; Shang, Tinghua; Yang, Guang; Jia, Xiaolong; Cai, Qing; Yang, Xiaoping

    2016-08-01

    The direct fabrication of hybrid nanofibres composed of poly(methyl methacrylate)-grafted SiO2 (SiO2-PMMA) nanospheres via electrospinning was investigated in detail. SiO2-PMMA nanospheres were successfully prepared, with the SiO2 nanospheres synthesized via the Stober method, followed by in situ surface-initiated atom transfer radical polymerization of methyl methacrylate (MMA). Electrospinning was carried out with N,N-dimethylformamide (DMF) as the solvent to disperse SiO2-PMMA nanospheres. The size of the SiO2 core, the molecular weight of the PMMA shell and the concentration of the SiO2-PMMA/DMF solution all had substantial effects on the morphology and structure of electrospun nanofibres composed of SiO2-PMMA nanospheres. When these determining factors were well-tailored, it was found that one-dimensional necklace-like nanofibres were obtained, with SiO2-PMMA nanospheres aligned one by one along the fibre. The successful fabrication of nanofibres by directly electrospinning the SiO2-PMMA/DMF solution verified that polymer-grafted particles possess polymer-like characteristics, which endowed them with the ability to be processed into desirable shapes and structures. Copyright © 2016 Elsevier B.V. All rights reserved.

  16. 5 V driving organic non-volatile memory transistors with poly(vinyl alcohol) gate insulator and poly(3-hexylthiophene) channel layers

    Science.gov (United States)

    Nam, Sungho; Seo, Jooyeok; Kim, Hwajeong; Kim, Youngkyoo

    2015-10-01

    Organic non-volatile memory devices were fabricated by employing organic field-effect transistors (OFETs) with poly(vinyl alcohol) (PVA) and poly(3-hexylthiophene) as a gate insulating layer and a channel layer, respectively. The 10-nm-thick nickel layers were inserted for better charge injection between the channel layer and the top source/drain electrodes. The fabricated PVA-OFET memory devices could be operated at low voltages (≤5 V) and showed pronounced hysteresis characteristics in the transfer curves, even though very small hysteresis was measured from the output curves. The degree of hysteresis was considerably dependent on the ratio of channel width (W) to channel length (L). The PVA-OFET memory device with the smaller W/L ratio (25) exhibited better retention characteristics upon 700 cycles of writing-reading-erasing-reading operations, which was assigned to the stability of charged states in devices.

  17. The high temperature DC characteristics of a high voltage lateral insulated-gate bipolar transistors with NPN anode in junction isolation technology

    Science.gov (United States)

    Tsai, Ying-Chieh; Gong, Jeng; Chan, Wing-Chor; Wu, Shyi-Yuan; Lien, Chenhsin

    2017-06-01

    The high temperature DC characteristics of a high-voltage bulk Si lateral insulated-gate bipolar transistor in junction isolation (JI-LIGBT) technology is studied intensively in this paper. The current density distribution in the off-state at different temperatures of three types of device structure is compared. By using the Quasi-vertical DMOSFET (QVDMOS or multi-channel, MC) structure, the electron injection from the channel into the n-drift region is significantly enhanced, and the current density is improved. In addition, by extending the p-top layer to the NPN anode not only improves the breakdown voltage but also reduces the substrate current as well as ensures high temperature stability.

  18. Interface States Densities Effect at SiO2/ Polysilicon and SiO2/ Monosilicon Surfaces on N-polysilicon /Oxide/ P-Monosilicon Capacitance

    Directory of Open Access Journals (Sweden)

    H. Dib

    2014-05-01

    Full Text Available the interface states have a very significant role in the components containing MOS structures. In this paper we study the interface states densities effect at SiO2/ N-polysilicon and SiO2/ P- monosilicon surfaces on metal/polysilicon /oxide/ monosilicon capacitance. The numerical solution of poisson's equation and the determination of the charge variation in the structure induced by application of external bias (Vg allow simulating the capacitance-voltage MSPOS characteristics. The results show that the interface states at SiO2/ polysilicon and SiO2/ monosilicon surfaces translate the CT (V curve about positive voltage and cause the increase of the minimum value of capacitance. The effect of interface states on C (V curves is neglected for the polysilicon doping concentration in order to 1019 cm-3. For this doping level, the C (V curves are identical to the C (V of the monocristalline MOS structure.

  19. High fluence swift heavy ion structure modification of the SiO{sub 2}/Si interface and gate insulator in 65 nm MOSFETs

    Energy Technology Data Exchange (ETDEWEB)

    Ma, Yao [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gao, Bo, E-mail: gaobo@scu.edu.cn [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Gong, Min [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Willis, Maureen [College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Yang, Zhimei [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); Guan, Mingyue [College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China); Li, Yun [Key Laboratory of Radiation Physics and Technology of Ministry of Education, Sichuan University, Chengdu 610064 (China); Key Lab of Microelectronics Sichuan Province, Sichuan University, Chengdu, Sichuan 610064 (China); College of Physical Science and Technology, Sichuan University, Chengdu, Sichuan 610064 (China)

    2017-04-01

    In this work, a study of the structure modification, induced by high fluence swift heavy ion radiation, of the SiO{sub 2}/Si structures and gate oxide interface in commercial 65 nm MOSFETs is performed. A key and novel point in this study is the specific use of the transmission electron microscopy (TEM) technique instead of the conventional atomic force microscope (AFM) or scanning electron microscope (SEM) techniques which are typically performed following the chemical etching of the sample to observe the changes in the structure. Using this method we show that after radiation, the appearance of a clearly visible thin layer between the SiO{sub 2} and Si is observed presenting as a variation in the TEM intensity at the interface of the two materials. Through measuring the EDX line scans we reveal that the Si:O ratio changed and that this change can be attributed to the migration of the Si towards interface after the Si-O bond is destroyed by the swift heavy ions. For the 65 nm MOSFET sample, the silicon substrate, the SiON insulator and the poly-silicon gate interfaces become blurred under the same irradiation conditions.

  20. Coulombic and neutral electron trapping centers in SiO 2

    Science.gov (United States)

    Buchanan, D. A.; Fischetti, M. V.; Dimaria, D. J.

    1989-10-01

    Metal-oxide-semiconductor (MOS) structures incorporating thermally grown silicon dioxide (SiO 2) films were implanted with arsenic ions (As +) and then annealed at high temperatures. Coulombic-attractive traps (for electrons) were produced with the avalanche injection of holes from the silicon substrate and their subsequent capture on some of these arsenic-related sites. During internal photo-emission of electrons from a thin aluminum gate, the voltage shifts due to hole annihilation by electrons were recorded and the macroscopic capture cross-section, σ, was determined. We found that σ varies from ˜10 -12 to 3 × 10 -15 cm 2 for average electric fields ranging from 2 × 10 5 to 3 × 10 6 V/cm. Below an average field threshold of Fth ≈ 1.2 × 10 6 V/cm, the capture cross-section versus average field (σ versus Fave) dependence follows a power law with the exponent n ≈ -1.5. Above the average field threshold, the power law exponent was found to be n ≈ -3.0. Also when the amphoteric arsenic-related sites are empty, they form neutral trapping sites for electrons. For average fields ranging from 5 × 10 5 to 6 × 10 6 V/cm, the neutral cross-section is found to be approximately constant at σ ≈ (1-2) × 10 -15 cm 2.

  1. Distribution of electron traps in SiO2/HfO2 nMOSFET

    Science.gov (United States)

    Xiao-Hui, Hou; Xue-Feng, Zheng; Ao-Chen, Wang; Ying-Zhe, Wang; Hao-Yu, Wen; Zhi-Jing, Liu; Xiao-Wei, Li; Yin-He, Wu

    2016-05-01

    In this paper, the principle of discharge-based pulsed I-V technique is introduced. By using it, the energy and spatial distributions of electron traps within the 4-nm HfO2 layer have been extracted. Two peaks are observed, which are located at ΔE ˜ -1.0 eV and -1.43 eV, respectively. It is found that the former one is close to the SiO2/HfO2 interface and the latter one is close to the gate electrode. It is also observed that the maximum discharge time has little effect on the energy distribution. Finally, the impact of electrical stress on the HfO2 layer is also studied. During stress, no new electron traps and interface states are generated. Meanwhile, the electrical stress also has no impact on the energy and spatial distribution of as-grown traps. The results provide valuable information for theoretical modeling establishment, material assessment, and reliability improvement for advanced semiconductor devices. Project supported by the National Natural Science Foundation of China (Grant Nos. 61334002, 61106106, and 61474091), the New Experiment Development Funds for Xidian University, China (Grant No. SY1434), and the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry, China (Grant No. JY0600132501).

  2. Phonon spectra in SiO2 glasses

    International Nuclear Information System (INIS)

    Perez R, J.F.; Jimenez S, S.; Gonzalez H, J.; Vorobiev, Y.V.; Hernandez L, M.A.; Parga T, J.R.

    1999-01-01

    Phonon spectra in SiO 2 sol-gel made glasses annealed under different conditions are investigated using infrared absorption and Raman scattering. These data are compared with those obtained in commercial optical-quality quartz. All the materials exhibit the same phonon bands, the exact position and the intensity depend on the measuring technique and on the sample preparation method. The phonon spectra in this material are interpreted on the basis of a simple quasi-linear description of elastic waves in an O-Si-O chain. It is shown that the main features observed in the range 400-1400 cm -1 can be predicted using a quasi-linear chain model in which the band at 1070 cm -1 is assigned to the longitudinal optical waves in the O-Si-O chain with the smallest possible wavelength at the Brillouin zone boundary, the band located around 450 cm -1 is assigned to the transversal optical waves and the band at 800 cm -1 to the longitudinal acoustical waves with the same wavelength. The degree of structural disorder can be also deduced within the framework of the proposed model. (Author)

  3. Scintillator based on SiO2-aerogel

    International Nuclear Information System (INIS)

    Boyko, I.R.; Ignatenko, M.A.; Esenak, K.; Kuhta, L.; Ruzicka, J.; Fainor, V.

    1995-01-01

    For increasing the light output of SiO 2 -aerogel two aerogel samples were doped with the wavelength shifter POPOP. As a result a scintillator with intermediate density between the gas and the solid state has been produced. The light pulse shapes of the both samples are well approximated by a sum of two exponents with the decay times 1.4±0.1 ns (58% of total light output) and 5.2±0.4 ns (42%). Under irradiation of 5.5 MeV α-particles the light output of the sample with smaller wavelength shifter concentration was 30% and that of the sample with larger concentration was 8% of the light output of a plastic scintillator (polysterene, 2% paraterphenil, 0.2% POPOP). The obtained data indicate that the α/β ratio for both samples is close to 1. This material can be used in experiments where the amount of substance in the way of particles to be detected is a critical factor. (orig.)

  4. Functionalized sio2 microspheres for extracting oil from produced water

    KAUST Repository

    Mishra, Himanshu

    2017-03-16

    Functionalized material, methods of producing the functionalized material, and use thereof for separation processes such as but not limited to use for separating and extracting a dissolved organic foulant, charged contaminant or oily matter or any combination thereof from water, such as produced water, are provided. In an embodiment, the functionalized material is a mineral material, such as mica, silica (e.g. an SiO2 microsphere) or a metal oxide, and the outer surface of the material is functionalized with an alkyl chain or a perfluorinated species. In an embodiment, the method of making the functionalized material, includes: a) providing a mineral material; b) providing an alkyl chain and/or a perfluorinated species, the alkyl chain or perfluorinated species selected to dissolve organic foulants, charged contaminants or oily matter from water or any combination thereof; c) hydroxylating the material via a concentrated acid solution or a basic solution; and d) grafting the alkyl chain and/or the perfluorinated species onto the material via a silanation reaction.

  5. O-vacancies in (i) nano-crystalline HfO2 and (i) non-crystalline SiO2 and Si3N4 studied by X-ray absorption spectroscopy.

    Science.gov (United States)

    Lucovsky, Gerald; Miotti, Leonardo; Bastos, Karen Paz

    2012-06-01

    Performance and reliability in semiconductor devices are limited by electronically active defects, primarily O-atom and N-atom vacancies. Synchrotron X-ray spectroscopy results, interpreted in the context of two-electron multiplet theories, have been used to analyze conduction band edge, and O-vacancy defect states in nano-crystalline transition metal oxides, e.g., HfO2, and the noncrystalline dielectrics, SiO2, Si3N4 and Si-oxynitride alloys. Two-electron multiplet theory been used to develop a high-spin state equivalent d2 model for O-vacancy allowed transitions and negative ion states as detected by X-ray absorption spectroscopy in the O K pre-edge regime. Comparisons between theory and experiment have used Tanabe-Sugano energy level diagrams for determining the symmetries and relative energies of intra-d-state transitions for an equivalent d2 ground state occupancy. Trap-assisted-tunneling, Poole-Frenkel hopping transport, and the negative bias temperature instability have been explained in terms of injection and/or trapping into O-atom and N-atom vacancy sites, and applied to gate dielectric, and metal-insulator-metal structures.

  6. Synthesis of TiO 2-doped SiO 2 composite films and its applications

    Indian Academy of Sciences (India)

    In XRD, FT–IR, and TEM investigations of these TiO2-doped SiO2 composite films, the titanium oxide species are highly dispersed in the SiO2 matrixes and exist in a ... Anhui Key Laboratory of Functional Molecular Solids, College of Chemistry and Materials Science, Anhui Normal University, Wuhu 241000, P.R. China ...

  7. Assembly of Fe3O4 nanoparticles on SiO2 monodisperse spheres

    Indian Academy of Sciences (India)

    Assembly of Fe3O4 nanoparticles on SiO2 monodisperse spheres. K C BARICK and D BAHADUR*. Department of Metallurgical Engineering and Materials Science, Indian Institute of Technology Bombay,. Mumbai 400 076, India. Abstract. The assembly of superparamagnetic Fe3O4 nanoparticles on submicroscopic SiO2 ...

  8. Field emission properties of SiO2-wrapped CNT field emitter

    Science.gov (United States)

    Lim, Yu Dian; Hu, Liangxing; Xia, Xin; Ali, Zishan; Wang, Shaomeng; Tay, Beng Kang; Aditya, Sheel; Miao, Jianmin

    2018-01-01

    Carbon nanotubes (CNTs) exhibit unstable field emission (FE) behavior with low reliability due to uneven heights of as-grown CNTs. It has been reported that a mechanically polished SiO2-wrapped CNT field emitter gives consistent FE performance due to its uniform CNT heights. However, there are still a lack of studies on the comparison between the FE properties of freestanding and SiO2-wrapped CNTs. In this study, we have performed a comparative study on the FE properties of freestanding and SiO2-wrapped CNT field emitters. From the FE measurements, freestanding CNT field emitter requires lower applied voltage of 5.5 V μm‑1 to achieve FE current density of 22 mA cm‑2 whereas SiO2-wrapped field emitter requires 8.5 V μm‑1 to achieve the same current density. This can be attributed to the lower CNT tip electric field of CNTs embedded in SiO2, as obtained from the electric field simulation. Nevertheless, SiO2-wrapped CNTs show higher consistency in FE current than freestanding CNTs. Under repeated FE measurement, SiO2-wrapped CNT field emitter achieves consistent FE behavior from the 1st voltage sweep, whereas freestanding field emitter only achieved consistent FE performance after 3rd voltage sweep. At the same time, SiO2-wrapped CNTs exhibit better emission stability than freestanding CNTs over 4000 s continuous emission.

  9. Assembly of Fe3O4 nanoparticles on SiO2 monodisperse spheres

    Indian Academy of Sciences (India)

    Abstract. The assembly of superparamagnetic Fe3O4 nanoparticles on submicroscopic SiO2 spheres have been prepared by an in situ reaction using different molar ratios of Fe3+/Fe2+ (50–200%). It has been observed that morphology of the assembly and properties of these hybrid materials composed of SiO2 as core ...

  10. Design Optimization of Back-Gated Thin-Body Silicon-on-Insulator Capacitorless Dynamic Random Access Memory Cell

    Science.gov (United States)

    Cho, Min Hee; Shin, Changhwan; King Liu, Tsu-Jae

    2012-02-01

    Highly scaled (22 nm-node) capacitorless single-transistor dynamic random access memory (DRAM) cell design is investigated via technology computer-aided design (TCAD) simulations. It is found that the gate-sidewall spacer width and operating voltages can be adjusted to reduce band-to-band tunneling (BTBT) and thereby increase data retention time for bipolar junction transistor (BJT)-based operation. Read current variations due to random dopant fluctuations (RDF) are investigated via three-dimensional Kinetic Monte Carlo (KMC) simulations. It is found that BJT-based operation is more robust to RDF effects than metal-oxide-semiconductor field-effect transistor (MOSFET)-based operation.

  11. Microporous SiO2-based solid electrolyte with improved polarization response for 0.8 V transparent thin-film transistors

    International Nuclear Information System (INIS)

    Sun Jia; Jiang Jie; Lu Aixia; Wan Qing

    2010-01-01

    The polarization mechanism of a microporous SiO 2 -based solid electrolyte is developed and three polarizations (electric double layer formation, ionic relaxation and dipole relaxation) are identified. The polarization response of the microporous SiO 2 -based solid electrolyte is optimized by tuning the deposition temperature and the improved specific capacitance is 1 μF cm -2 at 1 kHz and remains above 0.6 μF cm -2 even at 10 kHz. Ultralow-voltage transparent In-Zn-O thin-film transistors (TFTs) gated by such dielectrics are fabricated at low temperatures. The field-effect mobility, current on/off ratio and subthreshold swing are estimated to be 46.2 cm 2 V -1 s -1 , ∼10 6 and 69 mV/decade, respectively. Such TFTs hold promise for portable electronic applications.

  12. Electro-spun PEDOT-PSS nano-ribbon transistor using ion-gel gate dielectric

    Science.gov (United States)

    Ortiz, Deliris N.; Pinto, Nicholas J.

    Poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonic acid)-PEDOT:PSS is a p-doped conducting polymer. Using the electrospinning technique, we have fabricated nano-ribbons of this polymer and deposited them on pre-patterned doped Si/SiO2 wafers. Using the doped Si substrate as the back gate electrode and the SiO2 as the dielectric insulator, the ribbon was characterized in a 3-terminal transistor configuration. No change in the channel current was observed for back gate bias under these conditions. We also used an ion-gel gate dielectric by placing a drop of the ion-gel over the ribbon and inserting a Au wire into the drop. By applying a bias to this contact (top gate), we were able to modulate the current through the ribbon at low voltages. The device operated like a field effect/electrochemical transistor, characteristic of a p-doped semiconductor with an on/off ratio of 350, threshold voltage of 0.7V, mobility of 5 cm2/V-s, and a zero gate bias conductivity of 15 S/cm. The large specific capacitance of the ion-gel (as compared to SiO2) and the formation of an electric double layer at the semiconductor/ion-gel interface was responsible for its operation below 2V. The device was also successfully tested at 100Hz making it useful in low frequency applications. NSF-DMR: RUI 1360772; PREM-1523463.

  13. Hierarchical Cd4SiS6/SiO2 Heterostructure Nanowire Arrays.

    Science.gov (United States)

    Liu, Jian; Wang, Chunrui; Xie, Qingqing; Cai, Junsheng; Zhang, Jing

    2009-10-29

    Novel hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays were fabricated on silicon substrates by a one-step thermal evaporation of CdS powder. The as-grown products were characterized using scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. Studies reveal that a typical hierarchical Cd4SiS6/SiO2 heterostructure nanowire is composed of a single crystalline Cd4SiS6 nanowire core sheathed with amorphous SiO2 sheath. Furthermore, secondary nanostructures of SiO2 nanowires are highly dense grown on the primary Cd4SiS6 core-SiO2 sheath nanowires and formed hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays which stand vertically on silicon substrates. The possible growth mechanism of hierarchical Cd4SiS6/SiO2 heterostructure nanowire arrays is proposed. The optical properties of hierarchical Cd4SiS6/SiO2 heterostructure nanowire arrays are investigated using Raman and Photoluminescence spectroscopy.

  14. Preparation and Characterization of SiO2/SiCN Core-shell Ceramic Microspheres

    Directory of Open Access Journals (Sweden)

    ZHANG Hai-yuan

    2017-05-01

    Full Text Available The SiO2/PSN core-shell microspheres were prepared via an emulsion reaction combined with the polymer-derived ceramics (PDCs method using polysilazane (PSN in situ polymerization on the surface of SiO2 modified by silane coupling agents MPS, followed by pyrolysis process to obtain SiO2/SiCN core-shell ceramic microspheres. The effects of raw mass ratio, curing time and pyrolysis temperature on the formation and the morphology of core-shell microspheres were studied. The morphology, chemical composition and phase transformation were characterized by SEM, EDS, TEM, FT-IR and XRD. The results show that after reaction for 4h at 200℃, SiO2 completely coated PSN forms a core-shell microsphere with rough surface when the mass ratio of SiO2 and PSN is 1:4; when pyrolysis temperature is at 800-1200℃, amorphous SiO2/SiCN core-shell ceramic microspheres are prepared; at 1400℃, the amorphous phase partially crystallizes to produce SiO2, SiC and Si3N4 phase.

  15. Hierarchical Cd4SiS6/SiO2 Heterostructure Nanowire Arrays

    Directory of Open Access Journals (Sweden)

    Liu Jian

    2009-01-01

    Full Text Available Abstract Novel hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays were fabricated on silicon substrates by a one-step thermal evaporation of CdS powder. The as-grown products were characterized using scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. Studies reveal that a typical hierarchical Cd4SiS6/SiO2 heterostructure nanowire is composed of a single crystalline Cd4SiS6 nanowire core sheathed with amorphous SiO2 sheath. Furthermore, secondary nanostructures of SiO2 nanowires are highly dense grown on the primary Cd4SiS6 core-SiO2 sheath nanowires and formed hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays which stand vertically on silicon substrates. The possible growth mechanism of hierarchical Cd4SiS6/SiO2 heterostructure nanowire arrays is proposed. The optical properties of hierarchical Cd4SiS6/SiO2 heterostructure nanowire arrays are investigated using Raman and Photoluminescence spectroscopy.

  16. Enhanced antioxidation and microwave absorbing properties of SiO2-coated flaky carbonyl iron particles

    Science.gov (United States)

    Zhou, Yingying; Xie, Hui; Zhou, Wancheng; Ren, Zhaowen

    2018-01-01

    SiO2 was successfully coated on the surface of flaky carbonyl iron particles using a chemical bath deposition method in the presence of 3-aminopropyl triethoxysilane (APTES). The morphologies, composition, valence states of elements, as well as antioxidation and electromagnetic properties of the samples were characterized by scanning electron microscope (SEM), energy dispersive spectrometer (EDS), X-ray photoelectron spectroscopy (XPS), thermogravimetric (TG) and microwave network analyzer. TG curve shows the obvious weight gain of carbonyl iron was deferred to 360 °C after SiO2-coated, which can be ascribed to the exits of SiO2 overlayer. Compared with the raw carbonyl iron, SiO2-coated sample shows good wave absorption performance due to its impedance matching. The electromagnetic properties of raw and SiO2-coated carbonyl iron particles were characterized in X band before and after heat treatment at 250 °C for 10 h. It was established that SiO2-coated carbonyl iron demonstrate good thermal stability, indicating SiO2-coating is useful in the usage of microwave absorbers operating at temperature up to 250 °C.

  17. Effect of SiO2 addition and gamma irradiation on the lithium borate glasses

    Science.gov (United States)

    Raut, A. P.; Deshpande, V. K.

    2018-01-01

    The physical properties like density, glass transition temperature (Tg), and ionic conductivity of lithium borate (LB) glasses with SiO2 addition were measured before and after gamma irradiation. Remarkable changes in properties have been obtained in the physical properties of LB glasses with SiO2 addition and after gamma irradiation. The increase in density and glass transition temperature of LB glasses with SiO2 addition has been explained with the help of increase in density of cross linking due to SiO4 tetrahedra formation. The increase in ionic conductivity with SiO2 addition was explained with the help of ‘mixed glass former effect’. The increase in density and Tg of LB glasses with SiO2 addition after gamma irradiation has been attributed to fragmentation of bigger ring structure into smaller rings, which increases the density of cross linking and hence compaction. The exposure of gamma irradiation has lead to decrease in ionic conductivity of LB glasses with SiO2 addition. The atomic displacement caused by gamma irradiation resulted in filling of interstices and decrease in trapping sites. This explains the obtained decrease in ionic conductivity after gamma irradiation of glasses. The obtained results of effect of SiO2 addition and gamma irradiation on the density, Tg and ionic conductivity has been supported by FTIR results.

  18. Kinetics of Valeric Acid Ketonization and Ketenization in Catalytic Pyrolysis on Nanosized SiO2, γ-Al2O3, CeO2/SiO2, Al2O3/SiO2and TiO2/SiO2.

    Science.gov (United States)

    Kulyk, Kostiantyn; Palianytsia, Borys; Alexander, John D; Azizova, Liana; Borysenko, Mykola; Kartel, Mykola; Larsson, Mats; Kulik, Tetiana

    2017-07-19

    Valeric acid is an important renewable platform chemical that can be produced efficiently from lignocellulosic biomass. Upgrading of valeric acid by catalytic pyrolysis has the potential to produce value added biofuels and chemicals on an industrial scale. Understanding the different mechanisms involved in the thermal transformations of valeric acid on the surface of nanometer-sized oxides is important for the development of efficient heterogeneously catalyzed pyrolytic conversion techniques. In this work, the thermal decomposition of valeric acid on the surface of nanoscale SiO 2 , γ-Al 2 O 3 , CeO 2 /SiO 2 , Al 2 O 3 /SiO 2 and TiO 2 /SiO 2 has been investigated by temperature-programmed desorption mass spectrometry (TPD MS). Fourier transform infrared spectroscopy (FTIR) has also been used to investigate the structure of valeric acid complexes on the oxide surfaces. Two main products of pyrolytic conversion were observed to be formed depending on the nano-catalyst used-dibutylketone and propylketene. Mechanisms of ketene and ketone formation from chemisorbed fragments of valeric acid are proposed and the kinetic parameters of the corresponding reactions were calculated. It was found that the activation energy of ketenization decreases in the order SiO 2 >γ-Al 2 O 3 >TiO 2 /SiO 2 >Al 2 O 3 /SiO 2 , and the activation energy of ketonization decreases in the order γ-Al 2 O 3 >CeO 2 /SiO 2 . Nano-oxide CeO 2 /SiO 2 was found to selectively catalyze the ketonization reaction. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Cytotoxicity and effect on GJIC of SiO2 nanoparticles in HL-7702 cells

    International Nuclear Information System (INIS)

    Pan Tao; Jin Minghua; Liu Xiaomei; Du Zhongjun; Zhou Xianqing; Huang Peili; Sun Zhiwei

    2013-01-01

    Objective: To study the cytotoxicity and effect on gap junction intracellular communication (GJIC) of SiO 2 nanoparticles in HL-7702 cells, and to provide experimental basis for toxicity assessment and the security applications of SiO 2 nanoparticles. Methods: Transmission electron microscope (TEM) was used to characterize two kinds of SiO 2 nanoparticles, verifying their size, dispersion and shape; dynamic light scattering (DLS) method was used to analyze the water dispersion and culture medium dispersion of the SiO 2 nanoparticles; MTT assay was carried out to examine the cytotoxicities of the two sizes SiO 2 nanoparticles on the cells; lactate dehydrogenase (LDH) release assay was performed to examine the integrity nano of the cell membrane; Scrape-loading and dye transfer assay was performed to examine the effect of SiO 2 nanoparticles on GJIC. Results: Based on the result of TEM, two kinds of SiO 2 nanoparticles were spherically shaped, uniformly sized and sporadically dispersed; the statistical analysis results showed the diameters of the two nanoparticles were (447.60±20.78) nm and (67.42±5.69) nm, respectively, thus they could be categorized as submicron scale and nano scale. The DLS method results manifested that the hydration nanoparticle sizes of the two SiO 2 nanoparticles were (684.37±18.76) nm, (128.31±7.64) nm in high purity water and (697.02±19.57) nm, (133.74±8.97) nm in RPMI-1640 solution, all the two nanoparticles were well dispersed without aggregation. MTT assay indicated that 24 h after treatment of SiO 2 nanoparticles, the cell viabilities were affected by both the size and the dose of the SiO 2 nanoparticles; the higher the dose was, the less viability the cells exhibited. Moreover, the nano scale particles inflicted more damage to the cells. LDH release assay indicated that the SiO 2 particles could also damage the cell membrane in a dose-dependent and size-dependent way. Scrape-loading and dye transfer assay indicated that the nano scale particles could cause GJIC inhibition in a dose-dependent way; and when at the same dose, the nanoparticles could cause a more obvious inhibition of GJIC than the submicron particles. Conclusion: SiO 2 nanoparticles have cytotoxicity on HL-7702 cells, and would cause GJIC inhibition. (authors)

  20. Hierarchical Cd4SiS6/SiO2 Heterostructure Nanowire Arrays

    OpenAIRE

    Liu, Jian; Wang, Chunrui; Xie, Qingqing; Cai, Junsheng; Zhang, Jing

    2009-01-01

    Abstract Novel hierarchical Cd4SiS6/SiO2 based heterostructure nanowire arrays were fabricated on silicon substrates by a one-step thermal evaporation of CdS powder. The as-grown products were characterized using scanning electron microscopy, X-ray diffraction, and transmission electron microscopy. Studies reveal that a typical hierarchical Cd4SiS6/SiO2 heterostructure nanowire is composed of a single crystalline Cd4SiS6 nanowire core sheathed with amorphous SiO2 sheath. Furthermore, secondar...

  1. Facile synthesis of microporous SiO2/triangular Ag composite nanostructures for photocatalysis

    Science.gov (United States)

    Sirohi, Sidhharth; Singh, Anandpreet; Dagar, Chakit; Saini, Gajender; Pani, Balaram; Nain, Ratyakshi

    2017-11-01

    In this article, we present a novel fabrication of microporous SiO2/triangular Ag nanoparticles for dye (methylene blue) adsorption and plasmon-mediated degradation. Microporous SiO2 nanoparticles with pore size green 26 and curcumin crystalline. Amine-functionalized microporous SiO2/triangular Ag nanostructures were used for plasmon-mediated photocatalysis of methylene blue. The experimental results revealed that the large surface area of microporous silica facilitated adsorption of dye. Triangular Ag nanoparticles, due to their better charge carrier generation and enhanced surface plasmon resonance, further enhanced the photocatalysis performance.

  2. Formation of radiative centers in SiO2 by tin high-dose implantation

    International Nuclear Information System (INIS)

    Komarov, F.F.; Parkhomenko, I.N.; Vlasukova, L.A.; Mil'chanin, O.V.; Mokhovikov, M.A.; Wendler, E.; Wesch, W.

    2013-01-01

    The structural transformations in SiO 2 layers implanted with high fluence of Sn ions have been investigated. It has been found that post-implantation annealing results in the β-Sn precipitation as well as the formation of SnO 2 -enriched regions in SiO 2 :Sn matrix. The intensive emission in the range of photon energies 1.5 – 3.5 eV is registered for the implanted and annealed samples. We attribute it to the oxygen deficiency centers created in the SiO 2 :Sn matrix and at the 'nanocluster/SiO 2 ' interfaces. (authors)

  3. Spatially Uniform Thin-Film Formation of Polymeric Organic Semiconductors on Lyophobic Gate Insulator Surfaces by Self-Assisted Flow-Coating.

    Science.gov (United States)

    Bulgarevich, Kirill; Sakamoto, Kenji; Minari, Takeo; Yasuda, Takeshi; Miki, Kazushi

    2017-02-22

    Surface hydrophobization by self-assembled monolayer formation is a powerful technique for improving the performance of organic field-effect transistors (OFETs). However, organic thin-film formation on such a surface by solution processing often fails due to the repellent property of the surface against common organic solvents. Here, a scalable unidirectional coating technique that can solve this problem, named self-assisted flow-coating, is reported. Producing a specially designed lyophobic-lyophilic pattern on the lyophobic surface enables organic thin-film formation in the lyophobic surface areas by flow-coating. To demonstrate the usefulness of this technique, OFET arrays with an active layer of poly(2,5-bis(3-hexadecylthiophene-2-yl)thieno[3,2-b]thiophene) are fabricated. The ideal transfer curves without hysteresis behavior are obtained for all OFETs. The average field-effect hole mobility in the saturation regime is 0.273 and 0.221 cm 2 ·V -1 ·s -1 for the OFETs with the channels parallel and perpendicular to the flow-coating direction, respectively, and the device-to-device variation is less than 3% for each OFET set. Very small device-to-device variation is also obtained for the on-state current, threshold voltage, and subthreshold swing. These results indicate that the self-assisted flow-coating is a promising coating technique to form spatially uniform thin films of polymeric organic semiconductors on lyophobic gate insulator surfaces.

  4. Radiation-induced redistribution of gold in SiO2-Si structures

    International Nuclear Information System (INIS)

    Bolotov, V.V.; Emeksuzyan, V.M.; Spiridonov, V.N.

    1989-01-01

    Gold distribution in SiO 2 -Si structures after diffusion and its redistribution under irradiation by high-energy electrons are studied by DLTS and SIMS methods. It is shown that the concentration of substitutional gold increases at radiation doses of 10 13 to 10 14 cm -2 , which is due to the presence of a previously inactive interstitial component Au I and its dissolution in vacancies. A radiation dose increase results in radiation-induced gettering of gold by the SiO 2 -Si interface with subsequent penetration of gold into SiO 2 . The state of the SiO 2 -Si interface affects the behaviour of gold at irradiation. (author)

  5. Experimental determination of nanofluid specific heat with SiO2 nanoparticles in different base fluids

    Science.gov (United States)

    Akilu, S.; Baheta, A. T.; Sharma, K. V.; Said, M. A.

    2017-09-01

    Nanostructured ceramic materials have recently attracted attention as promising heat transfer fluid additives owing to their outstanding heat storage capacities. In this paper, experimental measurements of the specific heats of SiO2-Glycerol, SiO2-Ethylene Glycol, and SiO2-Glycerol/Ethylene Glycol mixture 60:40 ratio (by mass) nanofluids with different volume concentrations of 1.0-4.0% have been carried out using differential scanning calorimeter at temperatures of 25 °C and 50 °C. Experimental results indicate lower specific heat capacities are found with SiO2 nanofluids compared to their respective base fluids. The specific heat was decreasing with the increase of concentration, and this decrement depends on upon the type of the base fluid. It is observed that temperature has a positive impact on the specific heat capacity. Furthermore, the experimental values were compared with the theoretical model predictions, and a satisfactory agreement was established.

  6. Synthesis of unidirectional structures of SiO2-Ag using Au nanoparticles as nucleation centers

    International Nuclear Information System (INIS)

    Villa S, G.; Mendoza A, D.; Gutierrez W, C.; Perez H, R.

    2008-01-01

    This paper reports a method to synthesize Ag unidirectional structures covered with SiO 2 by sol-gel technique using Au nanoparticles as nucleation centers of the unidirectional structures. In the first phase unidirectional structures of SiO 2 -Ag CI are obtained by sol-gel, using TEOS as a precursor of metallic structures (Ag) and the incorporation of Au nanoparticles as nucleation centers for growth of unidirectional structures. In the second stage, one-way systems are subjected to thermal treatment in H 2 atmosphere for obtain AG 0 particles through mechanisms that diffusion and coalescence of silver to form structures that have a thin cover of SiO 2 . Analysis by scanning electron microscopy, transmission and atomic force microscopy allowed to determine the chemical composition and microstructural properties of unidirectional systems SiO 2 -Ag. (Author)

  7. Tetrazoles in the Presence of Nano-TiCl 4 .SiO 2

    African Journals Online (AJOL)

    Nano-TiCl4.SiO2 was found to be an extremely efficient catalyst for the preparation of 5-substituted 1H-tetrazole derivatives. Nano-TiCl4.SiO2 is a solid Lewis-acid was synthesized by the reaction of nano-SiO2 and TiCl4. The structure characterization of this acid was achieved with X-ray diffraction, thermogravimetric ...

  8. Core-exsolved SiO2 Dispersal in the Earth's Mantle

    Science.gov (United States)

    Helffrich, G. R.; Ballmer, M.; Hirose, K.

    2017-12-01

    SiO2 may have been expelled from the core following its formation in the early stages of Earth's accretion and onwards through the present day. On account of SiO2's low density with respect to both the core and the lowermost mantle, we examine the process of SiO2 accumulation at the core-mantle boundary (CMB) and its incorporation into the mantle by buoyant rise. Today, the if SiO2 is 100-10000 times more viscous than lower mantle material, the dimensions of SiO2 diapirs formed by the viscous Rayleigh-Taylor instability at the CMB would cause them to be swept into the mantle as inclusions of 100 m - 10 km diameter. Under early Earth conditions of rapid heat loss after core formation, SiO2 diapirs of 5-80 km diameter could have risen independently of mantle flow to their level of neutral buoyancy in the mantle, trapping them there due to a combination of high viscosity and neutral buoyancy. We examine the SiO2 yield by assuming Si+O saturation at the conditions found at the base of a magma ocean and find that for a range of conditions, dispersed bodies could reach as high as 2 volume percent in shallow parts of the lower mantle, with their abundance decreasing with depth. At such low concentrations, their effect on aggregate seismic wavespeeds would be within the uncertainty of the radial Earth model PREM. However, their presence would be revealed by small-scale scattering in the lower mantle due to the bodies' large velocity contrast. We conclude that the shallow lower mantle (700-1500 km depth) could harbor SiO2 released in early Earth times.

  9. Nano-Ticl 4 .SiO 2 : a Versatile and Efficient Catalyst for Synthesis of ...

    African Journals Online (AJOL)

    Nano-TiCl4.SiO2 has been found to be an extremely efficient catalyst for the preparation of 3,4-dihydropyrimidinones/thiones via three-component reactions of an aldehyde, β-ketoester or β-diketone and urea or thiourea under mild conditions. Nano-TiCl4.SiO2 as a solid Lewis acid has been synthesized by reaction of ...

  10. Growth Stress in SiO2 during Oxidation of SiC Fibers (Preprint)

    Science.gov (United States)

    2011-11-01

    calculating the average self-pressure ( pav ) in the SiO2 scale throughout its thickness, as a function of total scale thickness (w), temperature, and fiber...2 ∑ p(bj2 − bj−12 )ij=1 [54] The average pressure ( pav ) was calculated for 6 and 3 µm...for public release; distribution unlimited. Fig. 13. Average SiO2 scale self-pressure ( pav ) for 6 and 3 µm radius fibers as a function of scale

  11. Effects of post-deposition annealing on sputtered SiO2/4H-SiC metal-oxide-semiconductor

    Science.gov (United States)

    Lee, Suhyeong; Kim, Young Seok; Kang, Hong Jeon; Kim, Hyunwoo; Ha, Min-Woo; Kim, Hyeong Joon

    2018-01-01

    Reactive sputtering followed by N2, NH3, O2, and NO post-deposition annealing (PDA) of SiO2 on 4H-SiC was investigated in this study. The results of ellipsometry, an etching test, and X-ray photoemission spectroscopy showed that N2 and NH3 PDA nitrified the SiO2. Devices using N2 and NH3 PDA exhibited a high gate leakage current and low breakdown field due to oxygen vacancies and incomplete oxynitride. SiO2/4H-SiC MOS capacitors were also fabricated and their electrical characteristics measured. The average breakdown fields of the devices using N2, NH3, O2, and NO PDA were 0.12, 0.17, 4.71 and 2.63 MV/cm, respectively. The shifts in the flat-band voltage after O2 and NO PDA were 0.95 and -2.56 V, respectively, compared with the theoretical value. The extracted effective oxide charge was -4.11 × 1011 cm-2 for O2 PDA and 1.11 × 1012 cm-2 for NO PDA. NO PDA for 2 h at 1200 °C shifted the capacitance-voltage curve in the negative direction. The oxygen containing PDA showed better electrical properties than non-oxygen PDA. The sputtering method described can be applied to 4H-SiC MOS fabrication.

  12. Calcium phosphate formation on porous sol-gel-derived SiO2 and CaO-P2O5-SiO2 substrates in vitro.

    Science.gov (United States)

    Peltola, T; Jokinen, M; Rahiala, H; Levänen, E; Rosenholm, J B; Kangasniemi, I; Yli-Urpo, A

    1999-01-01

    Sol-gel-derived SiO2 and CaO-P2O5-SiO2 have been shown to be bioactive and bone bonding. In this study bioactive sol-gel-derived SiO2 and CaO-P2O5-SiO2 systems were tested for in in vitro bioactivity. The calcined ceramic monoliths were immersed in a simulated body fluid and analyzed to follow the hydroxyapatite formation on the ceramic surface. Apatite-forming ability was investigated in terms of structural changes by changing the composition and the preparation method. The role of Ca and P dopants in the substrate structure is complicated, and careful characterization is needed. The composition and structure together determine the in vitro bioactivity. The pore structure was analyzed using N2-adsorption/desorption isotherms. The results indicate that a great mesopore volume and a wide mesopore size distribution favor hydroxycarbonate apatite nucleation and a great surface area is not needed. The performed preparation process for silica in a basic environment provides a convenient way to prepare a mesoporous material. Copyright 1999 John Wiley & Sons, Inc.

  13. Screen-Printed Photochromic Textiles through New Inks Based on SiO2@naphthopyran Nanoparticles.

    Science.gov (United States)

    Pinto, Tânia V; Costa, Paula; Sousa, Céu M; Sousa, Carlos A D; Pereira, Clara; Silva, Carla J S M; Pereira, Manuel Fernando R; Coelho, Paulo J; Freire, Cristina

    2016-10-26

    Photochromic silica nanoparticles (SiO 2 @NPT), fabricated through the covalent immobilization of silylated naphthopyrans (NPTs) based on 2H-naphtho[1,2-b]pyran (S1, S2) and 3H-naphtho[2,1-b]pyran (S3, S4) or through the direct adsorption of the parent naphthopyrans (1, 3) onto silica nanoparticles (SiO 2 NPs), were successfully incorporated onto cotton fabrics by a screen-printing process. Two aqueous acrylic- (AC-) and polyurethane- (PU-) based inks were used as dispersing media. All textiles exhibited reversible photochromism under UV and solar irradiation, developing fast responses and intense coloration. The fabrics coated with SiO 2 @S1 and SiO 2 @S2 showed rapid color changes and high contrasts (ΔE* ab = 39-52), despite presenting slower bleaching kinetics (2-3 h to fade to the original color), whereas the textiles coated with SiO 2 @S3 and SiO 2 @S4 exhibited excellent engagement between coloration and decoloration rates (coloration and fading times of 1 and 2 min, respectively; ΔE* ab = 27-53). The PU-based fabrics showed excellent results during the washing fastness tests, whereas the AC-based textiles evidenced good results only when a protective transfer film was applied over the printed design.

  14. Band alignments and improved leakage properties of (La2O3)0.5(SiO2)0.5/SiO2/GaN stacks for high-temperature metal-oxide-semiconductor field-effect transistor applications

    Science.gov (United States)

    Gao, L. G.; Xu, B.; Guo, H. X.; Xia, Y. D.; Yin, J.; Liu, Z. G.

    2009-06-01

    The band alignments of (La2O3)0.5(SiO2)0.5(LSO)/GaN and LSO/SiO2/GaN gate dielectric stacks were investigated comparatively by using x-ray photoelectron spectroscopy. The valence band offsets for LSO/GaN stack and LSO/SiO2/GaN stack are 0.88 and 1.69 eV, respectively, while the corresponding conduction band offsets are found to be 1.40 and 1.83 eV, respectively. Measurements of the leakage current density as function of temperature revealed that the LSO/SiO2/GaN stack has much lower leakage current density than that of the LSO/GaN stack, especially at high temperature. It is concluded that the presence of a SiO2 buffer layer increases band offsets and reduces the leakage current density effectively.

  15. Synthesis, microstructure and magnetic properties of Fe3Si0.7Al0.3@SiO2 core-shell particles and Fe3Si/Al2O3 soft magnetic composite core

    Science.gov (United States)

    Wang, Jian; Fan, Xi'an; Wu, Zhaoyang; Li, Guangqiang

    2015-11-01

    Fe3Si0.7Al0.3@SiO2 core-shell particles and Fe3Si/Al2O3 soft magnetic composite core have been synthesized via a modified stöber method combined with following high temperature sintering process. Most of conductive Fe3Si0.7Al0.3 particles could be uniformly coated by insulating SiO2 using the modified stöber method. The Fe3Si0.7Al0.3@SiO2 core-shell particles exhibited good soft magnetic properties with low coercivity and high saturation magnetization. The reaction 4Al+3SiO2=2α-Al2O3+3Si took place during the sintering process. As a result the new Fe3Si/Al2O3 composite was formed. The Fe3Si/Al2O3 composite core displayed more excellent soft magnetic properties, better frequency stability at high frequencies, much higher electrical resistivity and lower core loss than the pure Fe3Si0.7Al0.3 core. The method of introducing insulating layers surrounding magnetic particles provides a promising route to develop new and high compact soft magnetic materials with good magnetic and electric properties.

  16. Sol-gel preparation of self-cleaning SiO2-TiO2/SiO2-TiO2 double-layer antireflective coating for solar glass

    Science.gov (United States)

    Lin, Wensheng; Zheng, Jiaxian; Yan, Lianghong; Zhang, Xinxiang

    2018-03-01

    Self-cleaning SiO2-TiO2/SiO2-TiO2 double-layer antireflective (AR) coating is prepared by sol-gel process. SiO2 sol is prepared by using tetraethyl orthosilicate (TEOS) as precursor and ammonia as catalyst, while TiO2 sol was prepared by using tetrabutyl orthotitanate (TBOT) as precursor and hydrochloric acid as catalyst. The effect of TiO2 content on refractive index, abrasion-resistance and photo-catalytic activity of SiO2-TiO2 hybrid thin films or powders is systematically investigated. It is found that the refractive index of SiO2-TiO2 hybrid thin films increases gradually from 1.18 to 1.53 as the weight ratio of TiO2 to SiO2 increased from 0 to 1.0. The SiO2-TiO2 hybrid thin film and powder possesses good abrasion-resistance and photo-catalytic activity, respectively, as the weight ratio of TiO2 to SiO2 is 0.4. The degradation degree of Rhodamine B by SiO2-TiO2 hybrid powder is 88.3%. Finally, SiO2-TiO2/SiO2-TiO2 double-layer AR coating with high transmittance, abrasion-resistance and self-cleaning property is realized.

  17. A facile approach to fabricate Au nanoparticles loaded SiO2 microspheres for catalytic reduction of 4-nitrophenol

    International Nuclear Information System (INIS)

    Tang, Mingyi; Huang, Guanbo; Li, Xianxian; Pang, Xiaobo; Qiu, Haixia

    2015-01-01

    Hydrophilic and biocompatible macromolecules were used to improve and simplify the process for the fabrication of core/shell SiO 2 @Au composite particles. The influence of polymers on the morphology of SiO 2 @Au particles with different size of SiO 2 cores was analyzed by transmission electron microscopy and scanning electron microscopy. The optical property of the SiO 2 @Au particles was studied with UV–Vis spectroscopy. The results indicate that the structure and composition of macromolecules affect the morphology of Au layers on SiO 2 microspheres. The SiO 2 @Au particles prepared in the presence of polyvinyl alcohol (PVA) or polyvinylpyrrolidone (PVP) have thin and complete Au nanoshells owing to their inducing act in preferential growth of Au nanoparticles along the surface of SiO 2 microspheres. SiO 2 @Au particles can be also prepared from SiO 2 microspheres modified with 3-aminopropyltrimethoxysilane in the presence of PVA or PVP. This offers a simple way to fabricate a Au layer on SiO 2 or other microspheres. The SiO 2 @Au particles demonstrated high catalytic activity in the reduction of 4-nitrophenol. - Highlights: • Facile direct deposition method for Au nanoparticles on silica microspheres. • Influence of different types of macromolecule on the formation of Au shell. • High catalytic performance of Au nanoparticles on silica microspheres

  18. Dry etched SiO2 Mask for HgCdTe Etching Process

    Science.gov (United States)

    Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

    2016-09-01

    A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

  19. Tunable graphene doping by modulating the nanopore geometry on a SiO2/Si substrate

    KAUST Repository

    Lim, Namsoo

    2018-02-28

    A tunable graphene doping method utilizing a SiO2/Si substrate with nanopores (NP) was introduced. Laser interference lithography (LIL) using a He–Cd laser (λ = 325 nm) was used to prepare pore size- and pitch-controllable NP SiO2/Si substrates. Then, bottom-contact graphene field effect transistors (G-FETs) were fabricated on the NP SiO2/Si substrate to measure the transfer curves. The graphene transferred onto the NP SiO2/Si substrate showed relatively n-doped behavior compared to the graphene transferred onto a flat SiO2/Si substrate, as evidenced by the blue-shift of the 2D peak position (∼2700 cm−1) in the Raman spectra due to contact doping. As the porosity increased within the substrate, the Dirac voltage shifted to a more positive or negative value, depending on the initial doping type (p- or n-type, respectively) of the contact doping. The Dirac voltage shifts with porosity were ascribed mainly to the compensation for the reduced capacitance owing to the SiO2–air hetero-structured dielectric layer within the periodically aligned nanopores capped by the suspended graphene (electrostatic doping). The hysteresis (Dirac voltage difference during the forward and backward scans) was reduced when utilizing an NP SiO2/Si substrate with smaller pores and/or a low porosity because fewer H2O or O2 molecules could be trapped inside the smaller pores.

  20. Thermodynamics of Bi2O3-SiO2 system

    Directory of Open Access Journals (Sweden)

    Onderka B.

    2017-01-01

    Full Text Available Thermodynamic properties of the liquid Bi2O3-SiO2 solutions were determined from the results of the electrochemical measurements by use of the solid oxide galvanic cells with YSZ (Yttria-Stabilized-Zirconia electrolyte. Activities of Bi2O3 in the solutions were determined for 0.2, 0.3, 0.4, and 0.5 SiO2 mole fractions in the temperature range 1073-1293 K from measured electromotive force (e.m.f of the solid electrolyte galvanic cell: Bi, Bi2O3-SiO2 | YSZ | air (pO2 = 0.213 bar Additionally, heat capacity data obtained for two solid phases 6Bi2O3•SiO2 and 2Bi2O3•3SiO2 were included into optimization of thermodynamic properties of the system. Optimization procedure was supported by differential thermal analysis (DTA data obtained in this work as well as those accepted from the literature. Using the data obtained in this work, and the information about phase equilibria found in the literature, binary system Bi2O3-SiO2 was assessed with the ThermoCalc software.

  1. Integrated nanophotonic hubs based on ZnO-Tb(OH3/SiO2 nanocomposites

    Directory of Open Access Journals (Sweden)

    Lin Yu

    2011-01-01

    Full Text Available Abstract Optical integration is essential for practical application, but it remains unexplored for nanoscale devices. A newly designed nanocomposite based on ZnO semiconductor nanowires and Tb(OH3/SiO2 core/shell nanospheres has been synthesized and studied. The unique sea urchin-type morphology, bright and sharply visible emission bands of lanthanide, and large aspect ratio of ZnO crystalline nanotips make this novel composite an excellent signal receiver, waveguide, and emitter. The multifunctional composite of ZnO nanotips and Tb(OH3/SiO2 nanoparticles therefore can serve as an integrated nanophotonics hub. Moreover, the composite of ZnO nanotips deposited on a Tb(OH3/SiO2 photonic crystal can act as a directional light fountain, in which the confined radiation from Tb ions inside the photonic crystal can be well guided and escape through the ZnO nanotips. Therefore, the output emission arising from Tb ions is truly directional, and its intensity can be greatly enhanced. With highly enhanced lasing emissions in ZnO-Tb(OH3/SiO2 as well as SnO2-Tb(OH3/SiO2 nanocomposites, we demonstrate that our approach is extremely beneficial for the creation of low threshold and high-power nanolaser.

  2. Integrated nanophotonic hubs based on ZnO-Tb(OH)3/SiO2 nanocomposites

    Science.gov (United States)

    Lin, Hsia Yu; Cheng, Chung Liang; Lin, Yu Shen; Hung, Yann; Mou, Chung Yuan; Chen, Yang Fang

    2011-08-01

    Optical integration is essential for practical application, but it remains unexplored for nanoscale devices. A newly designed nanocomposite based on ZnO semiconductor nanowires and Tb(OH)3/SiO2 core/shell nanospheres has been synthesized and studied. The unique sea urchin-type morphology, bright and sharply visible emission bands of lanthanide, and large aspect ratio of ZnO crystalline nanotips make this novel composite an excellent signal receiver, waveguide, and emitter. The multifunctional composite of ZnO nanotips and Tb(OH)3/SiO2 nanoparticles therefore can serve as an integrated nanophotonics hub. Moreover, the composite of ZnO nanotips deposited on a Tb(OH)3/SiO2 photonic crystal can act as a directional light fountain, in which the confined radiation from Tb ions inside the photonic crystal can be well guided and escape through the ZnO nanotips. Therefore, the output emission arising from Tb ions is truly directional, and its intensity can be greatly enhanced. With highly enhanced lasing emissions in ZnO-Tb(OH)3/SiO2 as well as SnO2-Tb(OH)3/SiO2 nanocomposites, we demonstrate that our approach is extremely beneficial for the creation of low threshold and high-power nanolaser.

  3. Petrogenesis of coexisting SiO 2-undersaturated to SiO 2-oversaturated felsic igneous rocks: The alkaline complex of Itatiaia, southeastern Brazil

    Science.gov (United States)

    Brotzu, P.; Gomes, C. B.; Melluso, L.; Morbidelli, L.; Morra, V.; Ruberti, E.

    1997-07-01

    The Itatiaia alkaline complex is a Late Cretaceous intrusion (72 Myr) made up of felsic differentiates, with syenitic rocks dominant throughout and with presence of both nepheline- and quartz-rich varieties. Dykes with phonolitic or trachytic composition cross-cut the coarse-grained facies. The rocks are arranged concentrically, with the core of the complex being formed by SiO 2-oversaturated syenites (with a small outcrop of granites), and are radially displaced by faults related to regional tectonic lineaments. The minerals show gradual but significant changes in composition (salitic and augitic to aegirine-rich pyroxenes, hastingsite and actinolite to richterite and arfvedsonite amphiboles, sodic plagioclase to orthoclase feldspars and so on) and the whole-rock trends are broadly consistent with fractional crystallization processes dominated by alkali feldspar removal. Sr-isotopic data indicate more radiogenic ratios for the SiO 2-oversaturated rocks (0.7062-0.7067 against 0.7048-0.7054 for the SiO 2-undersaturated syenites), consistent with small amounts of crustal input. The favored hypothesis for the petrogenesis of the different syenitic groups is the prolonged differentiation starting from differently SiO 2-undersaturated mafic parental magmas (potassic alkali basalts to ankaratrites, present in the Late Cretaceous dyke swarms of the area), accompanied by variable crustal contamination prior to the final emplacement. The lack of carbonatite as a significant lithotype, the potassic affinity of the Itatiaia complex, and the relatively high Sr-isotopic ratios match the characteristics of the other complexes of the Rio de Janeiro-Sa˜o Paulo states coastline and confirm the ultimate derivation of these differentiated rocks from an enriched lithospheric mantle source.

  4. SiO2 coating of silver nanoparticles by photoinduced chemical vapor deposition.

    Science.gov (United States)

    Boies, Adam M; Roberts, Jeffrey T; Girshick, Steven L; Zhang, Bin; Nakamura, Toshitaka; Mochizuki, Amane

    2009-07-22

    Gas-phase silver nanoparticles were coated with silicon dioxide (SiO2) by photoinduced chemical vapor deposition (photo-CVD). Silver nanoparticles, produced by inert gas condensation, and a SiO2 precursor, tetraethylorthosilicate (TEOS), were exposed to vacuum ultraviolet (VUV) radiation at atmospheric pressure and varying temperatures. The VUV photons dissociate the TEOS precursor, initiating a chemical reaction that forms SiO2 coatings on the particle surfaces. Coating thicknesses were measured for a variety of operation parameters using tandem differential mobility analysis and transmission electron microscopy. The chemical composition of the particle coatings was analyzed using energy dispersive x-ray spectrometry and Fourier transform infrared spectroscopy. The highest purity films were produced at 300-400 degrees C with low flow rates of additional oxygen. The photo-CVD coating technique was shown to effectively coat nanoparticles and limit core particle agglomeration at concentrations up to 10(7) particles cm(-3).

  5. Ion assisted deposition of SiO2 film from silicon

    Science.gov (United States)

    Pham, Tuan. H.; Dang, Cu. X.

    2005-09-01

    Silicon dioxide, SiO2, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO2 film with good and stable property.

  6. Preparation and Characterization of ZnO Nanoparticles Supported on Amorphous SiO2

    Directory of Open Access Journals (Sweden)

    Ying Chen

    2017-08-01

    Full Text Available In order to reduce the primary particle size of zinc oxide (ZnO and eliminate the agglomeration phenomenon to form a monodisperse state, Zn2+ was loaded on the surface of amorphous silica (SiO2 by the hydrogen bond association between hydroxyl groups in the hydrothermal process. After calcining the precursors, dehydration condensation among hydroxyl groups occurred and ZnO nanoparticles supported on amorphous SiO2 (ZnO–SiO2 were prepared. Furthermore, the SEM and TEM observations showed that ZnO nanoparticles with a particle size of 3–8 nm were uniformly and dispersedly loaded on the surface of amorphous SiO2. Compared with pure ZnO, ZnO–SiO2 showed a much better antibacterial performance in the minimum inhibitory concentration (MIC test and the antibacterial properties of the paint adding ZnO–SiO2 composite.

  7. Semiconductor nanocrystals formed in SiO2 by ion implantation

    International Nuclear Information System (INIS)

    Zhu, J.G.; White, C.W.; Budai, J.D.; Withrow, S.P.; Chen, Y.

    1994-11-01

    Nanocrystals of group IV (Si, Ge and SiGe), III-V (GaAs), and II-VI (CdSe) semiconductor materials have been fabricated inside SiO 2 by ion implantation and subsequent thermal annealing. The microstructure of these nanocrystalline semiconductor materials has been studied by transmission electron microscopy (TEM). The nanocrystals form in near-spherical shape with random crystal orientations in amorphous SiO 2 . Extensive studies on the nanocrystal size distributions have been carried out for the Ge nanocrystals by changing the implantation doses and the annealing temperatures. Remarkable roughening of the nanocrystals occurs when the annealing temperature is raised over the melting temperature of the implanted semiconductor material. Strong red photoluminescence peaked around 1.67 eV has been achieved in samples with Si nanocrystals in SiO 2

  8. SiO2 coating of silver nanoparticles by photoinduced chemical vapor deposition

    International Nuclear Information System (INIS)

    Boies, Adam M; Girshick, Steven L; Roberts, Jeffrey T; Zhang Bin; Nakamura, Toshitaka; Mochizuki, Amane

    2009-01-01

    Gas-phase silver nanoparticles were coated with silicon dioxide (SiO 2 ) by photoinduced chemical vapor deposition (photo-CVD). Silver nanoparticles, produced by inert gas condensation, and a SiO 2 precursor, tetraethylorthosilicate (TEOS), were exposed to vacuum ultraviolet (VUV) radiation at atmospheric pressure and varying temperatures. The VUV photons dissociate the TEOS precursor, initiating a chemical reaction that forms SiO 2 coatings on the particle surfaces. Coating thicknesses were measured for a variety of operation parameters using tandem differential mobility analysis and transmission electron microscopy. The chemical composition of the particle coatings was analyzed using energy dispersive x-ray spectrometry and Fourier transform infrared spectroscopy. The highest purity films were produced at 300-400 0 C with low flow rates of additional oxygen. The photo-CVD coating technique was shown to effectively coat nanoparticles and limit core particle agglomeration at concentrations up to 10 7 particles cm -3 .

  9. The hydrophobic and omnidirectional antireflection coating of SiO2 nanospheres with C18-TEOS

    Science.gov (United States)

    Hsu, Cheng-Chih; Lan, Wen-Lin; Chen, Nien-Po; Wu, Chyan-Chyi

    2014-06-01

    This paper demonstrates the antireflection coating of SiO2 nanospheres applied to cover glass by using the optimal spin-coating method. Because of the hydrolysis and condensation reactions between the SiO2 nanosphere antireflection (AR) coating and n-octadecyltriethoxysilane solution (C18-TEOS), the contact angle of the AR coating with hydrophobic treatment is improved approximately 38%, and the moisture-resistance remains unchanged, which preserved similar transmittance for six weeks. Furthermore, the AR coating with hydrophobic treatment exhibits approximately 3% and 7% improvement in the transmittance at normal and oblique incidence, respectively. The hydrophobic and omnidirectional AR coating with nanoscale SiO2 particles can be fabricated using the proposed simple and economical method.

  10. Preparation and luminescence properties of SiO2@LaBO3:Eu3+ nanoparticles

    Science.gov (United States)

    Qin, Chuanxiang; Qin, Lin; Chen, Guoqiang; Xu, Haitao; Lin, Tong

    2013-08-01

    Spherical SiO2 particles having a LaBO3:Eu3+ shell have been prepared by coating of silica nanoparticles (size around 130-150 nm) with a LaBO3:Eu3+ sol-gel precursor and subsequent calcination. The SiO2@LaBO3:Eu3+ nanoparticles were characterized by X-ray diffraction (XRD), Fourier-transform infrared spectroscopy (FTIR), scanning electron microscopy, and transmission electron microscopy. The XRD and FTIR results revealed that the LaBO3:Eu3+ layer on SiO2 nanoparticles formed an H-LaBO3 crystal phase when calcination at a temperature up to 700 °C. Both excitation and emission properties were characterized. The strong excitation lines at 393 and 465 nm of SiO2@LaBO3:Eu3+ indicated that the core-shell phosphor matched well with the output wavelength of near-UV (350-400 nm) or blue LED (450 nm) chips in phosphor-converted W-LEDs. The emission spectra of the 5D0 → 7F J ( J = 0, 1, 2, 3, and 4) transitions at blue/near-UV light showed strong emission lines around 615 nm which were attributed to the induced electric dipole transition of 5D0 → 7F2. The coating cycles affected the luminescence of SiO2@LaBO3:Eu3+ nanoparticles and their CIE chromaticity coordinate shifted from orange-red to the deep red zone with the increase in the coating cycles (up to 3). The luminescence lifetime of the Eu3+ ions in SiO2@LaBO3:Eu3+ was 2.32 ms. Such a luminescent material may be useful for display and light applications.

  11. Bond length contraction in Au nanocrystals formed by ion implantation into thin SiO2

    International Nuclear Information System (INIS)

    Kluth, P.; Johannessen, B.; Giraud, V.; Cheung, A.; Glover, C.J.; Azevedo, G. de M; Foran, G.J.; Ridgway, M.C.

    2004-01-01

    Au nanocrystals (NCs) fabricated by ion implantation into thin SiO 2 and annealing were investigated by means of extended x-ray absorption fine structure (EXAFS) spectroscopy and transmission electron microscopy. A bond length contraction was observed and can be explained by surface tension effects in a simple liquid-drop model. Such results are consistent with previous reports on nonembedded NCs implying a negligible influence of the SiO 2 matrix. Cumulant analysis of the EXAFS data suggests surface reconstruction or relaxation involving a further shortened bond length. A deviation from the octahedral closed shell structure is apparent for NCs of size 25 A

  12. Structural colors of the SiO2/polyethyleneimine thin films on poly(ethylene terephthalate) substrates

    International Nuclear Information System (INIS)

    Jia, Yanrong; Zhang, Yun; Zhou, Qiubao; Fan, Qinguo; Shao, Jianzhong

    2014-01-01

    The SiO 2 /polyethyleneimine (PEI) films with structural colors on poly(ethylene terephthalate) (PET) substrates were fabricated by an electrostatic self-assembly method. The morphology of the films was characterized by Scanning Electron Microscopy. The results showed that there was no distinguishable multilayered structure found of SiO 2 /PEI films. The optical behaviors of the films were investigated through the color photos captured by a digital camera and the color measurement by a multi-angle spectrophotometer. Different hue and brightness were observed at various viewing angles. The structural colors were dependent on the SiO 2 particle size and the number of assembly cycles. The mechanism of the structural colors generated from the assembled films was elucidated. The morphological structures and the optical properties proved that the SiO 2 /PEI film fabricated on PET substrate formed a homogeneous inorganic/organic SiO 2 /PEI composite layer, and the structural colors were originated from single thin film interference. - Highlights: • SiO 2 /PEI thin films were electrostatic self-assembled on PET substrates. • The surface morphology and optical behavior of the film were investigated. • The structural colors varied with various SiO 2 particle sizes and assembly cycles. • Different hue and lightness of SiO 2 /PEI film were observed at various viewing angles. • Structural color of the SiO 2 /PEI film originated from single thin film interference

  13. Fabrication of an ordered mesoporous nanoparticle SiO2/Mc and their CMP of fused silica application

    Science.gov (United States)

    Xu, L.; Zou, C. L.; Zhang, X.; Kang, C. X.; Luo, G. H.; Pan, G. S.

    2018-02-01

    Here we developed an inorganic SiO2 core/mesoporous carbon shell structured (SiO2/Mc) nano-composite particle with an average size ∼50 nm as abrasives with improved dispersibility and distribution via a hydro-thermal route to obtain reserved fused silica surface and subsurface. The obtained SiO2/Mc were characterized by scanning electronic microscope. Atomic force microscopy was used to assess the surface before and after planarization. The results indicated the as-prepared SiO2/Mc composite abrasives gave a much lower surface roughness as well as lower topographical variations than that of traditional colloidal silica abrasives.

  14. Synthesis of crystalline Ge nanoclusters in PE-CVD-deposited SiO2 films

    DEFF Research Database (Denmark)

    Leervad Pedersen, T.P.; Skov Jensen, J.; Chevallier, J.

    2005-01-01

    The synthesis of evenly distributed Ge nanoclusters in plasma-enhanced chemical-vapour-deposited (PE-CVD) SiO2 thin films containing 8 at. % Ge is reported. This is of importance for the application of nanoclusters in semiconductor technology. The average diameter of the Ge nanoclusters can...

  15. Si nanocrystals embedded in SiO2: Optical studies in the vacuum ultraviolet range

    DEFF Research Database (Denmark)

    Pankratov, V.; Osinniy, Viktor; Kotlov, A.

    2011-01-01

    Photoluminescence excitation and transmission spectra of Si nanocrystals of different diameters embedded in a SiO2 matrix have been investigated in the broad visible-vacuum ultraviolet spectral range using synchrotron radiation. The dependence of the photoluminescence excitation spectra...

  16. Growth stress evolution in HfO2/SiO2 multilayers

    International Nuclear Information System (INIS)

    Li, Jingping; Fang, Ming; He, Hongbo; Shao, Jianda; Fan, Zhengxiu; Li, Zhaoyang

    2012-01-01

    Growth stress in hafnium oxide/silicon dioxide (HfO 2 /SiO 2 ) multilayers was measured in situ to understand the role of the sublayers and the influence of the underlayers' structural features. Experiments using three- and six-layer films were performed by electron-beam evaporation. During deposition, the developing trend of the force per unit width was controlled by changing the thickness ratio of the HfO 2 and SiO 2 layers. The substrate material affected the initial stress evolution of HfO 2 film. The structural feature of the HfO 2 layer onto which SiO 2 was deposited and the whole film thickness have a combined effect on the stress evolution of the SiO 2 layer. - Highlights: ► Film radius stress relates to thickness ratio of sublayers. ► The initial stress evolutions of HfO 2 depended on the substrate material. ► The structural feature of H layer affects the stress evolution of L layer.

  17. FeCl3.nano SiO2: An Efficient Heterogeneous Nano Catalyst for the ...

    African Journals Online (AJOL)

    NICO

    2012-05-28

    May 28, 2012 ... Solid acids have attracted much attention in organic synthesis owing to their easy work-up procedures, ... including the reaction of aryloxy magnesium halides and triethylorthoformate,13 cyclodehydration ... trichloroacetic acid,27 bismuth(III) chlo- ride,28 sulfonic acid functionalized silica (SiO2-Pr-SO3H),29.

  18. Preparation of TiO2-SiO2 composite photocatalysts for environmental applications

    Czech Academy of Sciences Publication Activity Database

    Paušová, Š.; Krýsa, J.; Jirkovský, Jaromír; Prevot, V.; Mailhot, G.

    2014-01-01

    Roč. 89, č. 8 (2014), s. 1129-1135 ISSN 0268-2575 Institutional support: RVO:61388955 Keywords : photocatalysis * TiO2/SiO2 * composite Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 2.349, year: 2014

  19. Nanoimprint lithography using TiO2-SiO2 ultraviolet curable materials

    Science.gov (United States)

    Takei, Satoshi

    2015-05-01

    Ultraviolet nanoimprint lithography has great potential for commercial device applications that are closest to production such as optical gratings, planar waveguides, photonic crystals, semiconductor, displays, solar cell panel, sensors, highbrightness LEDs, OLEDs, and optical data storage. I report and demonstrate the newly TiO2-SiO2 ultraviolet curable materials with 20-25 wt% ratio of high titanium for CF4/O2 etch selectivity using nanoimprint lithography process. The multiple structured three-dimensional micro- and nanolines patterns were observed to be successfully patterned over the large areas. The effect of titanium concentration on CF4/O2 etch selectivity with pattern transferring carbon layer imprinting time was investigated. CF4/O2 etching rate of the TiO2-SiO2 ultraviolet curable material was approximately 3.8 times lower than that of the referenced SiO2 sol-gel ultraviolet curable material. The TiO2-SiO2 ultraviolet curable material with high titanium concentration has been proved to be versatile in advanced nanofabrication.

  20. Theory of Al2O3 incorporation in SiO2

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper

    2002-01-01

    Different possible forms of Al2O3 units in a SiO2 network are studied theoretically within the framework of density-functional theory. Total-energy differences between the various configurations are obtained, and simple thermodynamical arguments are used to provide an estimate of their relative...

  1. Electrical impedance spectroscopic investigations of monodispersed SiO2 nanospheres

    Science.gov (United States)

    Sakthisabarimoorthi, A.; Martin Britto Dhas, S. A.; Jose, M.

    2018-01-01

    Dielectric analysis of uniform and monodispersed SiO2 nanospheres at various temperatures in the frequency range 1 Hz-1 MHz is reported. The high optical transmittance and the presence of silica network in the synthesized product are evident from UV-vis and FTIR spectroscopic techniques respectively. The amorphous structure of SiO2 nanospheres is investigated by powder XRD pattern and uniform spherical morphology is visualized by FESEM analysis. The X-ray photoelectron spectroscopy elucidated the exact valence states of the SiO2 nanospheres. The temperature dependent dielectric parameters such as, dielectric constant (εr) and loss factor (tan δ) are decreased with increasing applied frequency and became static at higher frequencies. SiO2 nanospheres exhibited high dielectric constant (εr = 68) and low loss factor (tan δ = 0.0079) at 40 °C at 1 MHz. The activation energy (Ea) and relaxation time constant (τ) are calculated and the equivalent circuit model is developed to describe the electrical behaviour of the material.

  2. CoFe2O4-SiO2 Composites: Preparation and Magnetodielectric Properties

    Directory of Open Access Journals (Sweden)

    T. Ramesh

    2016-01-01

    Full Text Available Cobalt ferrite (CoFe2O4 and silica (SiO2 nanopowders have been prepared by the microwave hydrothermal (M-H method using metal nitrates as precursors of CoFe2O4 and tetraethyl orthosilicate as a precursor of SiO2. The synthesized powders were characterized by XRD and FESEM. The (100-x (CoFe2O4 + xSiO2 (where x = 0%, 10%, 20%, and 30% composites with different weight percentages have been prepared using ball mill method. The composite samples were sintered at 800°C/60 min using the microwave sintering method and then their structural and morphological studies were investigated using X-ray diffraction (XRD, Fourier transformation infrared (FTIR spectra, and scanning electron microscopy (SEM, respectively. The effect of SiO2 content on the magnetic and electrical properties of CoFe2O4/SiO2 nanocomposites has been studied via the magnetic hysteresis loops, complex permeability, permittivity spectra, and DC resistivity measurements. The synthesized nanocomposites with adjustable grain sizes and controllable magnetic properties make the applicability of cobalt ferrite even more versatile.

  3. Catalytic combustion of trichloroethylene over TiO2-SiO2 supported catalysts

    NARCIS (Netherlands)

    Kulazynski, M.; van Ommen, J.G.; Trawczynski, J.; Walendziewski, J.

    2002-01-01

    Combustion of trichloroethylene (TCE) on Cr2O3, V2O5, Pt or Pd catalysts supported on TiO2-SiO2 as a carrier has been investigated. It was found that oxide catalysts are very active but their activity quickly diminishes due to loss of the active component, especially at higher reaction temperatures

  4. SiO2 Glass Density to Lower-Mantle Pressures

    DEFF Research Database (Denmark)

    Petitgirard, Sylvain; Malfait, Wim J.; Journaux, Baptiste

    2017-01-01

    and present Earth. SiO2 is the main constituent of Earth's mantle and is the reference model system for the behavior of silicate melts at high pressure. Here, we apply our recently developed x-ray absorption technique to the density of SiO2 glass up to 110 GPa, doubling the pressure range...... for such measurements. Our density data validate recent molecular dynamics simulations and are in good agreement with previous experimental studies conducted at lower pressure. Silica glass rapidly densifies up to 40 GPa, but the density trend then flattens to become asymptotic to the density of SiO2 minerals above 60...... GPa. The density data present two discontinuities at similar to 17 and similar to 60 GPa that can be related to a silicon coordination increase from 4 to a mixed 5/6 coordination and from 5/6 to sixfold, respectively. SiO2 glass becomes denser than MgSiO3 glass at similar to 40 GPa, and its density...

  5. Enhanced Photocatalytic Activity of ZrO2-SiO2 Nanoparticles by Platinum Doping

    Directory of Open Access Journals (Sweden)

    Mohammad W. Kadi

    2013-01-01

    Full Text Available ZrO2-SiO2 mixed oxides were prepared via the sol-gel method. Photo-assisted deposition was utilized for doping the prepared mixed oxide with 0.1, 0.2, 0.3, and 0.4 wt% of Pt. XRD spectra showed that doping did not result in the incorporation of Pt within the crystal structure of the material. UV-reflectance spectrometry showed that the band gap of ZrO2-SiO2 decreased from 3.04 eV to 2.48 eV with 0.4 wt% Pt doping. The results show a specific surface area increase of 20%. Enhanced photocatalysis of Pt/ZrO2-SiO2 was successfully tested on photo degradation of cyanide under illumination of visible light. 100% conversion was achieved within 20 min with 0.3 wt% of Pt doped ZrO2-SiO2.

  6. Friction and wear studies on nylon-6/SiO2 nanocomposites

    NARCIS (Netherlands)

    de la Luz Garcia-Curiel, M.M.; de Rooij, Matthias B.; Winnubst, Aloysius J.A.; van Zyl, W.E.; Verweij, H.

    2004-01-01

    Composites of nanometer-sized silica (SiO2) filler incorporated in nylon-6 polymer were prepared by compression molding. Their friction and wear properties were investigated on a pin on disk tribometer by running a flat pin of steel against a composite disc. The morphologies of the composites as

  7. Enhanced field emission properties of carbon nanotube bundles confined in SiO2 pits

    Science.gov (United States)

    Lim, Yu Dian; Grapov, Dmitry; Hu, Liangxing; Kong, Qinyu; Tay, Beng Kang; Labunov, Vladimir; Miao, Jianmin; Coquet, Philippe; Aditya, Sheel

    2018-02-01

    It has been widely reported that carbon nanotubes (CNTs) exhibit superior field emission (FE) properties due to their high aspect ratios and unique structural properties. Among the various types of CNTs, random growth CNTs exhibit promising FE properties due to their reduced inter-tube screening effect. However, growing random growth CNTs on individual catalyst islands often results in spread out CNT bundles, which reduces overall field enhancement. In this study, significant improvement in FE properties in CNT bundles is demonstrated by confining them in microfabricated SiO2 pits. Growing CNT bundles in narrow (0.5 μm diameter and 2 μm height) SiO2 pits achieves FE current density of 1–1.4 A cm‑2, which is much higher than for freestanding CNT bundles (76.9 mA cm‑2). From the Fowler Nordheim plots, confined CNT bundles show a higher field enhancement factor. This improvement can be attributed to the reduced bundle diameter by SiO2 pit confinement, which yields bundles with higher aspect ratios. Combining the obtained outcomes, it can be conclusively summarized that confining CNTs in SiO2 pits yields higher FE current density due to the higher field enhancement of confined CNTs.

  8. Nano-TiCl4/SiO2: An efficient heterogeneous solid acid catalyst for ...

    Indian Academy of Sciences (India)

    Abstract. Nano-TiCl4/SiO2 was found to be an inexpensive and efficient heterogeneous solid acid catalyst for the synthesis of one-pot cascade synthesis of highly functionalized asymmetric tetrahydropyridines from the five-component condensation reaction of the para-substituted anilines and aromatic aldehydes with ethyl.

  9. Synthesis and characterization of silica–gold core-shell (SiO2@Au ...

    Indian Academy of Sciences (India)

    Synthesis and characterization of silica–gold core-shell (SiO2@Au) nanoparticles. DEEPIKA KANDPAL. 1,∗. , SUCHITA KALELE. 2 and S K KULKARNI. 2. 1. Department of Physics, G.B. Pant University of Agriculture & Technology,. Pantnagar 263 145, India. 2. Department of Physics, University of Pune, Pune 411 007, ...

  10. A microbiological evaluation of SiO2-coated textiles in hospital interiors

    DEFF Research Database (Denmark)

    Mogensen, Jeppe; Jørgensen, Poul-Erik; Thomsen, Trine Rolighed

    2016-01-01

    contact plates through a three-week period. By determining the level of contamination on these surfaces, the study illustrates that the SiO2-coated textile is possible to clean to an acceptable level below the critical limit value of 2,5 Colony Forming Units (CFU) per cm2. In comparison, the traditional...

  11. Synthesis of TiO2-doped SiO2 composite films and its applications

    Indian Academy of Sciences (India)

    Wintec

    And special attention has been focused on the relationship between the local structure of the titanium oxide species in the TiO2-doped SiO2 composite films and the photocatalytic reactiv- ity in order to provide vital information for the design and application of such highly efficient photocatalytic systems in the degradation of ...

  12. Hazards of TiO2 and amorphous SiO2 nanoparticles

    NARCIS (Netherlands)

    Reijnders, L.; Kahn, H.A.; Arif, I.A.

    2012-01-01

    TiO2 and amorphous SiO2 nanoparticles have been described as ‘safe’, ‘non-toxic’ and ‘environment friendly’ in scientific literature. However, though toxicity data are far from complete, there is evidence that these nanoparticles are hazardous. TiO2 nanoparticles have been found hazardous to humans

  13. Efficient photocatalytic activity with carbon-doped SiO2 nanoparticles

    KAUST Repository

    Zhang, Dongen

    2013-01-01

    Photocatalysis provides a \\'green\\' approach to completely eliminate various kinds of contaminants that are fatal for current environmental and energy issues. Semiconductors are one of the most frequently used photocatalysts as they can absorb light over a wide spectral range. However, it is also well known that naked SiO2 is not an efficient photocatalyst due to its relatively large band gap, which could only absorb shortwave ultraviolet light. In this report, nanoscale particles of carbon-doped silicon dioxide (C-doped SiO2) for use in photocatalysis were successfully prepared by a facile one-pot thermal process using tetraethylorthosilicate (TEOS) as the source of both silicon and carbon. These particles were subsequently characterized by thermogravimetric analysis, X-ray diffraction, standard and high resolution transmission electron microscopy and X-ray photoelectron spectroscopy. The C-doped SiO2 displayed outstanding photocatalytic properties, as evidenced by its catalysis of Rhodamine B degradation under near-UV irradiation. We propose that carbon doping of the SiO2 lattice creates new energy states between the bottom of the conduction band and the top of the valence band, which narrows the band gap of the material. As a result, the C-doped SiO2 nanoparticles exhibit excellent photocatalytic activities in a neutral environment. The novel synthesis reported herein for this material is both energy efficient and environmentally friendly and as such shows promise as a technique for low-cost, readily scalable industrial production. © 2013 The Royal Society of Chemistry.

  14. Ultrathin Microporous SiO2 Membranes Photodeposited on Hydrogen Evolving Catalysts Enabling Overall Water Splitting

    KAUST Repository

    Bau, Jeremy A.

    2017-10-17

    Semiconductor systems for photocatalytic overall water splitting into H2 and O2 gases typically require metal cocatalyst particles, such as Pt, to efficiently catalyze H2 evolution. However, such metal catalyst surfaces also serve as recombination sites for H2 and O2, forming H2O. We herein report the photon-induced fabrication of microporous SiO2 membranes that can selectively restrict passage of O2 and larger hydrated ions while allowing penetration of protons, water, and H2. The SiO2 layers were selectively photodeposited on Pt nanoparticles on SrTiO3 photocatalyst by using tetramethylammonium (TMA) as a structure-directing agent (SDA), resulting in the formation of core–shell Pt@SiO2 cocatalysts. The resulting photocatalyst exhibited both improved overall water splitting performance under irradiation and with no H2/O2 recombination in the dark. The function of the SiO2 layers was investigated electrochemically by fabricating the SiO2 layers on a Pt electrode via an analogous cathodic deposition protocol. The uniform, dense, yet amorphous layers possess microporosity originating from ring structures formed during the hydrolysis of the silicate precursor in the presence of TMA, suggesting a double-role for TMA in coordinating silicate to cathodic surfaces and in creating a microporous material. The resulting layers were able to function as a molecular sieve, allowing for exclusive H2 generation while excluding unwanted side reactions by O2 or ferricyanide. The SiO2 layer is stable for extended periods of time in photocatalytic conditions, demonstrating promise as a nontoxic material for selective H2 evolution.

  15. Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

    International Nuclear Information System (INIS)

    Lagger, P.; Steinschifter, P.; Reiner, M.; Stadtmüller, M.; Denifl, G.; Ostermaier, C.; Naumann, A.; Müller, J.; Wilde, L.; Sundqvist, J.; Pogany, D.

    2014-01-01

    The high density of defect states at the dielectric/III-N interface in GaN based metal-insulator-semiconductor structures causes tremendous threshold voltage drifts, ΔV th , under forward gate bias conditions. A comprehensive study on different dielectric materials, as well as varying dielectric thickness t D and barrier thickness t B , is performed using capacitance-voltage analysis. It is revealed that the density of trapped electrons, ΔN it , scales with the dielectric capacitance under spill-over conditions, i.e., the accumulation of a second electron channel at the dielectric/AlGaN barrier interface. Hence, the density of trapped electrons is defined by the charging of the dielectric capacitance. The scaling behavior of ΔN it is explained universally by the density of accumulated electrons at the dielectric/III-N interface under spill-over conditions. We conclude that the overall density of interface defects is higher than what can be electrically measured, due to limits set by dielectric breakdown. These findings have a significant impact on the correct interpretation of threshold voltage drift data and are of relevance for the development of normally off and normally on III-N/GaN high electron mobility transistors with gate insulation.

  16. Atomic layer-deposited Al–HfO2/SiO2 bi-layers towards 3D charge trapping non-volatile memory

    International Nuclear Information System (INIS)

    Congedo, Gabriele; Wiemer, Claudia; Lamperti, Alessio; Cianci, Elena; Molle, Alessandro; Volpe, Flavio G.; Spiga, Sabina

    2013-01-01

    A metal/oxide/high-κ dielectric/oxide/silicon (MOHOS) planar charge trapping memory capacitor including SiO 2 as tunnel oxide, Al–HfO 2 as charge trapping layer, SiO 2 as blocking oxide and TaN metal gate was fabricated and characterized as test vehicle in the view of integration into 3D cells. The thin charge trapping layer and blocking oxide were grown by atomic layer deposition, the technique of choice for the implementation of these stacks into 3D structures. The oxide stack shows a good thermal stability for annealing temperature of 900 °C in N 2 , as required for standard complementary metal–oxide–semiconductor processes. MOHOS capacitors can be efficiently programmed and erased under the applied voltages of ± 20 V to ± 12 V. When compared to a benchmark structure including thin Si 3 N 4 as charge trapping layer, the MOHOS cell shows comparable program characteristics, with the further advantage of the equivalent oxide thickness scalability due to the high dielectric constant (κ) value of 32, and an excellent retention even for strong testing conditions. Our results proved that high-κ based oxide structures grown by atomic layer deposition can be of interest for the integration into three dimensionally stacked charge trapping devices. - Highlights: ► Charge trapping device with Al–HfO 2 storage layer is fabricated and characterized. ► Al–HfO 2 and SiO 2 blocking oxides are deposited by atomic layer deposition. ► The oxide stack shows a good thermal stability after annealing at 900 °C. ► The device can be efficiently programmed/erased and retention is excellent. ► The oxide stack could be used for 3D-stacked Flash non-volatile memories

  17. Cleaning Challenges of High-κ/Metal Gate Structures

    KAUST Repository

    Hussain, Muhammad Mustafa

    2010-12-20

    High-κ/metal gates are used as transistors for advanced logic applications to improve speed and eliminate electrical issues associated with polySi and SiO2 gates. Various integration schemes are possible and will be discussed, such as dual gate, gate-first, and gate-last, both of which require specialized cleaning and etching steps. Specific areas of discussion will include cleaning and conditioning of the silicon surface, forming a high-quality chemical oxide, removal of the high-κ dielectric with selectivity to the SiO2 layer, cleaning and residue removal after etching, and prevention of galvanic corrosion during cleaning. © 2011 Scrivener Publishing LLC. All rights reserved.

  18. Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

    Science.gov (United States)

    Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

    Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

  19. Ethanol-to-Butadiene Conversion over SiO2-MgO Catalysts: Synthesis-Structure-Performance Relationships

    NARCIS (Netherlands)

    Angelici, C.

    2015-01-01

    The work presented in this PhD Thesis provides new insights into the underlying reasons that make SiO2-MgO materials excellent catalysts for the ethanol-to-butadiene Lebedev process. In particular, the preparation technique of choice affects the structural properties of the resulting SiO2-MgO

  20. The electrorheological properties of nano-sized SiO2 particle materials doped with rare earths

    International Nuclear Information System (INIS)

    Liu Yang; Liao Fuhui; Li Junran; Zhang Shaohua; Chen Shumei; Wei Chenguan; Gao Song

    2006-01-01

    Electrorheological (ER) materials of pure SiO 2 and SiO 2 doped with rare earths (RE = Ce, Gd, Y) (non-metallic glasses (silicates)) were prepared using Na 2 SiO 3 and RECl 3 as starting materials. The electrorheological properties are not enhanced by all rare earth additions. The material doped with Ce exhibits the best ER performance

  1. Sensitizing effects of ZnO quantum dots on red-emitting Pr3+-doped SiO2 phosphor

    CSIR Research Space (South Africa)

    Mbule, PS

    2012-05-01

    Full Text Available In this study, red cathodoluminescence (CL) ( emission=614 nm) was observed from Pr3+ ions in a glassy (amorphous) SiO2 host. This emission was enhanced considerably when ZnO quantum dots (QDs) were incorporated in the SiO2:Pr3+ suggesting...

  2. Preparation of Raspberry-like Superhydrophobic SiO2 Particles by Sol-gel Method and Its Potential Applications

    Directory of Open Access Journals (Sweden)

    Xu Gui-Long

    2011-12-01

    Full Text Available Raspberry‐like SiO2 particles with a nano‐micro‐binary structure were prepared by a simple sol‐gel method using tetraethoxysilane (TEOS and methyltriethoxysilane (MTES as precursors. The chemical components and morphology of the SiO2 particles were characterized by Fourier transform infrared spectroscopy (FT‐IR and a Transmission electron microscope (TEM. The surface topography and wetting behaviour of the raspberry‐like SiO2 surface were observed with a Scanning electron microscope (SEM and studied by the water/oil contact angle (CA, respectively. The thermal stability of the prepared SiO2 particles was characterized by TGA analysis. The results show that the highly dispersed SiO2 particles initially prepared by the sol‐gel method turn into raspberry‐like particles with during the aging process. The raspberry‐like SiO2 particles show superhydrophobicity and superoleophilicity across a wide range of pH values. The SiO2 particles were thermally stable up to 475°C, while above this temperature the hydrophobicity decreases and finally becomes superhydrophobic when the temperature reaches 600°C. The raspberry‐like SiO2 particles which were prepared have potential applications in the fields of superhydrophobic surfaces, water‐oil separation, anti‐corrosion and fluid transportation.

  3. Ultra-low power thin film transistors with gate oxide formed by nitric acid oxidation method

    International Nuclear Information System (INIS)

    Kobayashi, H.; Kim, W. B.; Matsumoto, T.

    2011-01-01

    We have developed a low temperature fabrication method of SiO 2 /Si structure by use of nitric acid, i.e., nitric acid oxidation of Si (NAOS) method, and applied it to thin film transistors (TFT). A silicon dioxide (SiO 2 ) layer formed by the NAOS method at room temperature possesses 1.8 nm thickness, and its leakage current density is as low as that of thermally grown SiO 2 layer with the same thickness formed at ∼900 deg C. The fabricated TFTs possess an ultra-thin NAOS SiO 2 /CVD SiO 2 stack gate dielectric structure. The ultrathin NAOS SiO 2 layer effectively blocks a gate leakage current, and thus, the thickness of the gate oxide layer can be decreased from 80 to 20 nm. The thin gate oxide layer enables to decrease the operation voltage to 2 V (cf. the conventional operation voltage of TFTs with 80 nm gate oxide: 12 V) because of the low threshold voltages, i.e., -0.5 V for P-ch TFTs and 0.5 V for N-ch TFTs, and thus the consumed power decreases to 1/36 of that of the conventional TFTs. The drain current increases rapidly with the gate voltage, and the sub-threshold voltage is ∼80 mV/dec. The low sub-threshold swing is attributable to the thin gate oxide thickness and low interface state density of the NAOS SiO 2 layer. (authors)

  4. Origin of positive fixed charge at insulator/AlGaN interfaces and its control by AlGaN composition

    Science.gov (United States)

    Matys, M.; Stoklas, R.; Blaho, M.; Adamowicz, B.

    2017-06-01

    The key feature for the precise tuning of Vth in GaN-based metal-insulator-semiconductor (MIS) high electron mobility transistors is the control of the positive fixed charge (Qf) at the insulator/III-N interfaces, whose amount is often comparable to the negative surface polarization charge ( Qp o l -). In order to clarify the origin of Qf, we carried out a comprehensive capacitance-voltage (C-V) characterization of SiO2/AlxGa1-xN/GaN and SiN/AlxGa1-xN/GaN structures with Al composition (x) varying from 0.15 to 0.4. For both types of structures, we observed a significant Vth shift in C-V curves towards the positive gate voltage with increasing x. On the contrary, the Schottky gate structures exhibited Vth shift towards the more negative biases. From the numerical simulations of C-V curves using the Poisson's equation supported by the analytical calculations of Vth, we showed that the Vth shift in the examined MIS structures is due to a significant decrease in the positive Qf with rising x. Finally, we examined this result with respect to various hypotheses developed in the literature to explain the origin of the positive Qf at insulator/III-N interfaces.

  5. Room-Temperature Voltage Stressing Effects on Resistive Switching of Conductive-Bridging RAM Cells with Cu-Doped SiO2 Films

    Directory of Open Access Journals (Sweden)

    Jian-Yang Lin

    2014-01-01

    Full Text Available SiO2 or Cu-doped SiO2 (Cu:SiO2 insulating films combined with Cu or W upper electrodes were constructed on the W/Si substrates to form the conductive-bridging RAM (CB-RAM cells. The CB-RAMs were then subjected to a constant-voltage stressing (CVS at room temperature. The experimental results show that the room-temperature CVS treatment can effectively affect the current conduction behavior and stabilize the resistive switching of the memory cells. After the CVS, the current conduction mechanisms in the high resistance state during the set process of the Cu/Cu:SiO2/W cell can be changed from Ohm’s law and the space charge limited conduction to Ohm’s law, the Schottky emission, and the space charge limited conduction. Presumably, it is due to the breakage of the conduction filaments during the CVS treatment that the conduction electrons cannot go back to the back electrode smoothly.

  6. SiO2/polyacrylonitrile membranes via centrifugal spinning as a separator for Li-ion batteries

    Science.gov (United States)

    Yanilmaz, Meltem; Lu, Yao; Li, Ying; Zhang, Xiangwu

    2015-01-01

    Centrifugal spinning is a fast, cost-effective and safe alternative to the electrospinning technique, which is commonly used for making fiber-based separator membranes. In this work, SiO2/polyacrylonitrile (PAN) membranes were produced by using centrifugal spinning and they were characterized by using different electrochemical techniques for use as separators in Li-ion batteries. SiO2/PAN membranes exhibited good wettability and high ionic conductivity due to their highly porous fibrous structure. Compared with commercial microporous polyolefin membranes, SiO2/PAN membranes had larger liquid electrolyte uptake, higher electrochemical oxidation limit, and lower interfacial resistance with lithium. SiO2/PAN membrane separators were assembled into lithium/lithium iron phosphate cells and these cells delivered high capacities and exhibited good cycling performance at room temperature. In addition, cells using SiO2/PAN membranes showed superior C-rate performance compared to those using microporous PP membrane.

  7. Versatile superamphiphobic cotton fabrics fabricated by coating with SiO2/FOTS

    Science.gov (United States)

    Li, Deke; Guo, Zhiguang

    2017-12-01

    A multifunctional superamphiphobic cotton fabric was fabricated by coating silica nanoparticles on the cotton fabric surface and further modification by 1H,1H,2H,2H-perfluorooctyltrichlorosilane (FOTS). The fluctuant woven fabric and the fluffy spherical SiO2 nanoparticles constructed a dual micro/nano-structures. The surface free energy of the fabric composite was reduced by FOTS modifier. The interplay of the structured and perfluorinated SiO2 nanoparticles could not only endow the fabric highly liquid repellent ability, but could also to enhance the coating stability. The prepared cotton fabrics exhibited high liquid repellency to water, colza oil and n-hexadecane with lower surface tension, showing a contact angle of 158°, 152°, and 153°, respectively. The results demonstrated that superamphiphobic cotton fabric possessed desirable chemical and mechanical durability, self-cleaning and self-healing property, the robust and multifunctional fabric would find innovative opportunities for practical applications.

  8. Enhanced formation of Ge nanocrystals in Ge : SiO2 layers by swift heavy ions

    International Nuclear Information System (INIS)

    Antonova, I V; Volodin, V A; Marin, D M; Skuratov, V A; Smagulova, S A; Janse van Vuuren, A; Neethling, J; Jedrzejewski, J; Balberg, I

    2012-01-01

    In this paper we report the ability of swift heavy Xe ions with an energy of 480 MeV and a fluence of 10 12 cm -2 to enhance the formation of Ge nanocrystals within SiO 2 layers with variable Ge contents. These Ge-SiO 2 films were fabricated by the co-sputtering of Ge and quartz sources which followed various annealing procedures. In particular, we found that the irradiation of the Ge : SiO 2 films with subsequent annealing at 500 °C leads to the formation of a high concentration of nanocrystals (NCs) with a size of 2-5 nm, whereas without irradiation only amorphous inclusions were observed. This effect, as evidenced by Raman spectra, is enhanced by pre-irradiation at 550 °C and post-irradiation annealing at 600 °C, which also leads to the observation of room temperature visible photoluminescence. (paper)

  9. Electron irradiation response on Ge and Al-doped SiO 2 optical fibres

    Science.gov (United States)

    Yaakob, N. H.; Wagiran, H.; Hossain, I.; Ramli, A. T.; Bradley, D. A.; Hashim, S.; Ali, H.

    2011-05-01

    This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO 2 optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO 2 optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.

  10. Microwave absorption properties and mechanism of cagelike ZnO /SiO2 nanocomposites

    Science.gov (United States)

    Cao, Mao-Sheng; Shi, Xiao-Ling; Fang, Xiao-Yong; Jin, Hai-Bo; Hou, Zhi-Ling; Zhou, Wei; Chen, Yu-Jin

    2007-11-01

    In this paper, cagelike ZnO /SiO2 nanocomposites were prepared and their microwave absorption properties were investigated in detail. Dielectric constants and losses of the pure cagelike ZnO nanostructures were measured in a frequency range of 8.2-12.4GHz. The measured results indicate that the cagelike ZnO nanostructures are low-loss material for microwave absorption in X band. However, the cagelike ZnO /SiO2 nanocomposites exhibit a relatively strong attenuation to microwave in X band. Such strong absorption is related to the unique geometrical morphology of the cagelike ZnO nanostructures in the composites. The microcurrent network can be produced in the cagelike ZnO nanostructures, which contributes to the conductive loss.

  11. Atmospheric Plasma Deposition of SiO2 Films for Adhesion Promoting Layers on Titanium

    Directory of Open Access Journals (Sweden)

    Liliana Kotte

    2014-12-01

    Full Text Available This paper evaluates the deposition of silica layers at atmospheric pressure as a pretreatment for the structural bonding of titanium (Ti6Al4V, Ti15V3Cr3Sn3Al in comparison to an anodizing process (NaTESi process. The SiO2 film was deposited using the LARGE plasma source, a linearly extended DC arc plasma source and applying hexamethyldisiloxane (HMDSO as a precursor. The morphology of the surface was analyzed by means of SEM, while the characterization of the chemical composition of deposited plasma layers was done by XPS and FTIR. The long-term durability of bonded samples was evaluated by means of a wedge test in hot/wet condition. The almost stoichiometric SiO2 film features a good long-term stability and a high bonding strength compared to the films produced with the wet-chemical NaTESi process.

  12. Fourier transform infrared spectroscopic study of gamma irradiated SiO2 nanoparticles

    Science.gov (United States)

    Huseynov, Elchin; Garibov, Adil; Mehdiyeva, Ravan; Huseynova, Efsane

    2018-03-01

    In the present work, nano SiO2 particles are investigated before and after gamma irradiation (25, 50, 75, 100 and 200 kGy) using Fourier transform infrared (FTIR) spectroscopy method for the wavenumber between 400-4000 cm-1. It is found that as a result of spectroscopic analysis, five new peaks have appeared after gamma radiation. Two of new obtained peaks (which are located at 687 cm-1 and 2357 cm-1 of wavenumber) were formed as a result of gamma radiation interaction with Si-O bonds. Another three new peaks (peaks appropriate to 941, 2052 and 2357 cm-1 values of wavenumber) appear as a result of interaction of water with nano SiO2 particles after gamma irradiation. It has been defined as asymmetrical bending vibration, symmetrical bending vibration, symmetrical stretching vibration and asymmetrical stretching vibration of Si-O bonds appropriate to peaks.

  13. Preparation of Mesoporous SiO2-Pillared Lamellar Titanoniobate Catalysts for Bioethanol Dehydration

    Directory of Open Access Journals (Sweden)

    Olivalter Pergentino

    2014-01-01

    Full Text Available The lamellar perovskite K0,8Ti0,8Nb1,2O5 was prepared by solid state reaction, and its protonic form was used in a sequence of intercalation steps with n-butylamine, cetyltrimethylammonium bromide (CTABr, and tetraethyl orthosilicate (TEOS. After calcination, a high surface area, mesoporous SiO2-pillared titanoniobate, was obtained. The samples were characterized by XRD, EDX, TG-DTG, N2 adsorption isotherms, and NH3-TPD. The pillarization procedure affected the textural properties, the amount, and strength distribution of acid sites. The influence of the pillarization procedure on the catalytic properties of the lamellar titanoniobates was investigated on ethanol dehydration. High ethanol conversions and ethylene yields (>90% were obtained in the presence of the SiO2-pillared titanoniobate catalyst, at 350–450°C.

  14. Electron irradiation response on Ge and Al-doped SiO2 optical fibres

    International Nuclear Information System (INIS)

    Yaakob, N.H.; Wagiran, H.; Hossain, I.; Ramli, A.T.; Bradley, D.A; Hashim, S.; Ali, H.

    2011-01-01

    This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO 2 optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO 2 optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.

  15. Formation of nucleoplasmic protein aggregates impairs nuclear function in response to SiO2 nanoparticles

    International Nuclear Information System (INIS)

    Chen Min; Mikecz, Anna von

    2005-01-01

    Despite of their exponentially growing use, little is known about cell biological effects of nanoparticles. Here, we report uptake of silica (SiO 2 ) nanoparticles to the cell nucleus where they induce aberrant clusters of topoisomerase I (topo I) in the nucleoplasm that additionally contain signature proteins of nuclear domains, and protein aggregation such as ubiquitin, proteasomes, cellular glutamine repeat (polyQ) proteins, and huntingtin. Formation of intranuclear protein aggregates (1) inhibits replication, transcription, and cell proliferation; (2) does not significantly alter proteasomal activity or cell viability; and (3) is reversible by Congo red and trehalose. Since SiO 2 nanoparticles trigger a subnuclear pathology resembling the one occurring in expanded polyglutamine neurodegenerative disorders, we suggest that integrity of the functional architecture of the cell nucleus should be used as a read out for cytotoxicity and considered in the development of safe nanotechnology

  16. Experimental observations of the chemistry of the SiO2/Si interface

    Science.gov (United States)

    Grunthaner, F. J.; Maserjian, J.

    1977-01-01

    Changes in silicon surface preparation prior to thermal oxidation are shown to leave a signature by altering the final SiO2/Si interface structure. Surface analytical techniques, including XPS, static SIMS, ion milling, and newly developed wet-chemical profiling procedures are used to obtain detailed information on the chemical structure of the interface. The oxides are shown to be essentially SiO2 down to a narrow transitional interface layer (3-7 A). A number of discrete chemical species are observed in this interface layer, including different silicon bonds (e.g., C-, OH-, H-) and a range of oxidation states of silicon (0 to +4). The effect of surface preparation and the observed chemical species are correlated with oxide growth rate, surface-state density, and flatband shifts after irradiation.

  17. Uniform fabrication of Ge nanocrystals embedded into SiO2 film via neutron transmutation doping

    Directory of Open Access Journals (Sweden)

    Wei Liu

    2014-06-01

    Full Text Available Nanocrystalline 74Ge embedded SiO2 films were prepared by employing ion implantation and neutron transmutation doping methods. Transmission electron microscopy, energy dispersive x-ray spectroscopy, and photoluminescence of the obtained samples were measured. The existence of As dopants transmuted from 74Ge is significant to guarantee the uniformity and higher volume density of Ge nanocrystals by tuning the system׳s crystallinity and activating mass transfer process. It was observed that the photoluminescence intensity of Ge nanocrystals increased first then decreased with the increase of arsenic concentration. The optimized fluence of neutron transmutation doping was found to be 5.5×1017 cm−2 to achieve maximum photoluminescence emission in Ge embedded SiO2 film. This work opens a route in the three-dimensional nanofabrication of uniform Ge nanocrystals.

  18. Conduction properties of micro-crystals of 2,5-dimethyl- N, N'-dicyanoquinonediimine metal (metal = Ag, Cu) complexes on SiO 2/Si substrates

    Science.gov (United States)

    Yamamoto, Hiroshi M.; Kawasugi, Yoshitaka; Ito, Hiromi; Fukunaga, Takeo; Suzuki, Toshiaki; Tsukagoshi, Kazuhito; Kato, Reizo

    2008-12-01

    Conduction properties of two kinds of DMe-DCNQI complexes deposited on SiO 2/Si substrate are presented. Direct chemical growth of (DMe-DCNQI) 2Ag on the substrate afforded single crystals attached to a gold electrode deposited on the substrate. The system showed bistable switching behavior associated with rectifying property, which seems suitable for resistive random access memory. Speculative mechanism for this behavior is discussed. On the other hand, single crystal of (DMe-DCNQI- d7) 2Cu grown elsewhere was attached to four gold electrodes by carbon paste and fixed on the substrate with epoxy resin. Four-probe measurement of this sample revealed an absence of metal-insulator (M-I) transition which is expected at 80 K for crystal without substrate. This phenomenon can be explained by pseudo-negative pressure effect due to the hard silicon substrate (DMe-DCNQI = 2,5-dimethyl- N, N'-dicyanoquinonediimine).

  19. Vaporization of SiO2 and MgSiO3

    Science.gov (United States)

    Stixrude, L. P.; Xiao, B.

    2016-12-01

    Vaporization of SiO2 and MgSiO3B Xiaoa and L Stixrude*a, a Department of Earth Sciences, University College London, WC1E 6BT London, UK *presenting author, email: l.stixrude@ucl.ac.uk Vaporization is an important process in Earth's earliest evolution during which giant impacts are thought to have produced a transient silicate atmosphere. As experimental data are very limited, little is known of the near-critical vaporization of Earth's major oxide components: MgO and SiO2. We have performed novel ab initio molecular dynamics simulations of vapor-liquid coexistence in the SiO2 and MgSiO3 systems. The simulations, based on density functional theory using the VASP code, begin with a suitably prepared liquid slab embedded in a vacuum. During the dynamical trajectory in the canonical ensemble, we see spontaneous vaporization, leading eventually to a steady-state chemical equilibrium between the two coexisting phases. We locate the liquid-vapor critical point at 6600 K and 0.40 g/cm3 for MgSiO3 and 5300 K and 0.43 g/cm3 for SiO2. By carefully examining the trajectories, we determine the composition and speciation of the vapor. For MgSiO3, We find that the vapor is significantly richer in Mg, O, and atomic (non-molecular) species than extrapolation of low-temperature experimental data has suggested. These results will have important implications for our understanding of the initial chemistry of the Earth and Moon and the initial thermal state of Earth.

  20. A novel growth mode of alkane films on a SiO2 surface

    DEFF Research Database (Denmark)

    Mo, H.; Taub, H.; Volkmann, U.G.

    2003-01-01

    Synchrotron X-ray specular scattering measurements confirm microscopically a structural model recently inferred by very-high-resolution ellipsometry of a solid dotriacontane (n-C32H66 or C32) film formed by adsorption from solution onto a SiO2 surface. Sequentially, one or two layers adsorb on th...... previously for shorter alkanes deposited from the vapor phase onto solid surfaces....

  1. Generation of interface states by injection of electrons into SiO2

    Science.gov (United States)

    Lyon, S. A.

    1984-11-01

    Several techniques have been used to inject electrons into SiO2 with various energies. Interface states are found to be generated whenever electrons flow through the oxide. However, the efficiency of interface state generation depends upon the method of electron injection. At high enough fields, positive charge is produced in the oxide which enhances the production of interface states. All of the states are amphoteric and are probably dangling Si bonds at the interface (Pb-centers).

  2. Effect of SiO2 Overlayer on WO3 Sensitivity to Ammonia

    Directory of Open Access Journals (Sweden)

    Vibha Srivastava

    2010-06-01

    Full Text Available Ammonia gas sensing properties of tungsten trioxide thick film sensor was investigated. The doping of noble catalysts such as Pt, Pd, Au enhanced the gas sensitivity. Platinum doping was found to result in highest sensitivity. Remarkable sensitivity enhancement was realized by coating WO3 thick film sensors with SiO2 overlayer. Sol gel process derived silica overlayer increased ammonia gas sensitivity for doped as well as undoped sensor.

  3. Structural verification and optical characterization of SiO2–Au–Cu2O ...

    Indian Academy of Sciences (India)

    In this paper, SiO2–Au–Cu2O core/shell/shell nanoparticles were synthesized by reducing gold chloride on 3-amino-propyl-triethoxysilane molecules attached silica nanoparticle cores for several stages. Cu2O nanoparticles were synthesized readily with the size of 4–5 nm using a simple route of sol–gel method. Then, they ...

  4. Effect of SiO2 protective layer on the femtosecond laser-induced damage of HfO2/SiO2 multilayer high-reflective coatings

    International Nuclear Information System (INIS)

    Yuan Lei; Zhao Yuanan; Wang Congjuan; He Hongbo; Fan Zhengxiu; Shao Jianda

    2007-01-01

    Two kinds of HfO 2 /SiO 2 800 nm high-reflective (HR) coatings, with and without SiO 2 protective layer were deposited by electron beam evaporation. Laser-induced damage thresholds (LIDT) were measured for all samples with femtosecond laser pulses. The surface morphologies and the depth information of all samples were observed by Leica optical microscopy and WYKO surface profiler, respectively. It is found that SiO 2 protective layer had no positive effect on improving the LIDT of HR coating. A simple model including the conduction band electron production via multiphoton ionization and impact ionization is used to explain this phenomenon. Theoretical calculations show that the damage occurs first in the SiO 2 protective layer for HfO 2 /SiO 2 HR coating with SiO 2 protective layer. The relation of LIDT for two kinds of HfO 2 /SiO 2 HR coatings in calculation agrees with the experiment result

  5. Direct fabrication of graphene on SiO2 enabled by thin film stress engineering

    Science.gov (United States)

    McNerny, Daniel Q.; Viswanath, B.; Copic, Davor; Laye, Fabrice R.; Prohoda, Christophor; Brieland-Shoultz, Anna C.; Polsen, Erik S.; Dee, Nicholas T.; Veerasamy, Vijayen S.; Hart, A. John

    2014-01-01

    We demonstrate direct production of graphene on SiO2 by CVD growth of graphene at the interface between a Ni film and the SiO2 substrate, followed by dry mechanical delamination of the Ni using adhesive tape. This result is enabled by understanding of the competition between stress evolution and microstructure development upon annealing of the Ni prior to the graphene growth step. When the Ni film remains adherent after graphene growth, the balance between residual stress and adhesion governs the ability to mechanically remove the Ni after the CVD process. In this study the graphene on SiO2 comprises micron-scale domains, ranging from monolayer to multilayer. The graphene has >90% coverage across centimeter-scale dimensions, limited by the size of our CVD chamber. Further engineering of the Ni film microstructure and stress state could enable manufacturing of highly uniform interfacial graphene followed by clean mechanical delamination over practically indefinite dimensions. Moreover, our findings suggest that preferential adhesion can enable production of 2-D materials directly on application-relevant substrates. This is attractive compared to transfer methods, which can cause mechanical damage and leave residues behind. PMID:24854632

  6. Stabilization of SiO2 nanoparticle foam system and evaluation of its performance

    Science.gov (United States)

    Sun, Chong; Fan, Zhenzhong; Liu, Qingwang; Wang, Jigang; Xu, Jianjun

    2017-05-01

    As tertiary recovery is applied in the oil field, foam flooding technology plays an important role in the oil field. Steam flooding is easy to generate a series of problems such as excessive pressure, gas channelling, heat loss ect. The foam flooding can be better used in the formation of plugging and profile control. However, the foam is not stabilizing in thermodynamics and breaks easily while it encounters oil. So the emphasis of the research is how to make the foam stable. The Warning Blender method is used to evaluate the foam In the course of experiment, which verifies that the modified Nano SiO2 solid not only works very well in coordination with SDS solution but also contributes to the generation of stable foam in solution. The optimum concentration of SDS is determined by 0.5%, and the best concentration is 1.4% of H20 type SiO2 particles that the concentration is 79.26°. Finally, the 0.5%SDS+1.4%H2O type SiO2 is chosen as the complete foam flooding system, and the performance of salt tolerance and oil displacement of composite foam system is evaluated. It is concluded that the stability of foam is the key to improve the oil recovery.

  7. Reduction of SiO2 to SiC Using Natural Gas

    Science.gov (United States)

    Ksiazek, Michal; Tangstad, Merete; Dalaker, Halvor; Ringdalen, Eli

    2014-09-01

    This paper presents a preliminary study of SiC production by use of natural gas for reduction of silica. Direct reduction of SiO2 by gas mixtures containing CH4, H2, and Ar was studied at temperatures between 1273 K and 1773 K (1000 °C and 1500 °C). Silica in form of particles between 1 and 3 mm and pellets with mean grain size 50 µm were exposed to the gas mixture for 6 hours. Influence of temperature and CH4H2 ratio was investigated. Higher temperature and CH4 concentration resulted in greater SiC production. Two kinds of SiC were found: one was deposited between SiO2 particles, the other one was deposited inside the SiO2 particles. Although the exact reaction mechanisms have not been determined, it is clear that gas-phase reactions play an important role in both cases. The reaction products were analyzed by Electron Probe Micro Analyzer.

  8. Strong piezoelectricity in single-layer graphene deposited on SiO2 grating substrates.

    Science.gov (United States)

    da Cunha Rodrigues, Gonçalo; Zelenovskiy, Pavel; Romanyuk, Konstantin; Luchkin, Sergey; Kopelevich, Yakov; Kholkin, Andrei

    2015-06-25

    Electromechanical response of materials is a key property for various applications ranging from actuators to sophisticated nanoelectromechanical systems. Here electromechanical properties of the single-layer graphene transferred onto SiO2 calibration grating substrates is studied via piezoresponse force microscopy and confocal Raman spectroscopy. The correlation of mechanical strains in graphene layer with the substrate morphology is established via Raman mapping. Apparent vertical piezoresponse from the single-layer graphene supported by underlying SiO2 structure is observed by piezoresponse force microscopy. The calculated vertical piezocoefficient is about 1.4 nm V(-1), that is, much higher than that of the conventional piezoelectric materials such as lead zirconate titanate and comparable to that of relaxor single crystals. The observed piezoresponse and achieved strain in graphene are associated with the chemical interaction of graphene's carbon atoms with the oxygen from underlying SiO2. The results provide a basis for future applications of graphene layers for sensing, actuating and energy harvesting.

  9. Oligo- and polymeric FET devices: Thiophene-based active materials and their interaction with different gate dielectrics

    International Nuclear Information System (INIS)

    Porzio, W.; Destri, S.; Pasini, M.; Bolognesi, A.; Angiulli, A.; Di Gianvincenzo, P.; Natali, D.; Sampietro, M.; Caironi, M.; Fumagalli, L.; Ferrari, S.; Peron, E.; Perissinotti, F.

    2006-01-01

    Derivatives of both oligo- and polythiophene-based FET were recently considered for low cost electronic applications. In the device optimization, factors like redox reversibility of the molecule/polymer, electronic level compatibility with source/drain electrodes, packing closeness, and orientation versus the electrodes, can determine the overall performance. In addition, a gate insulator with a high dielectric constant, a low leakage current, and capability to promote ordering in the semiconductor is required to increase device performances and to lower the FET operating voltage. In this view, Al 2 O 3 appears a good candidate, although its widespread adoption is limited by the disorder that such oxide induces on the semiconductor with detrimental consequences on semiconductor electrical properties. In this contribution, an overview of recent results obtained on thiophene-derivative-based FET devices, fabricated by different growth techniques, and using both thermally grown SiO 2 and Al 2 O 3 from atomic layer deposition gate insulators will be reported and discussed with particular reference to organic solid state aggregation, morphology, and organic-inorganic interface

  10. Photocatalytic application of TiO2/SiO2-based magnetic nanocomposite (Fe3O4@SiO2/TiO2) for reusing of textile wastewater

    OpenAIRE

    Laleh Enayati Ahangar; Karim Movassaghi; Masoomeh Emadi; Fatemeh Yaghoobi

    2016-01-01

    In this research we have developed a treatment method for textile wastewater by TiO2/SiO2-based magnetic nanocomposite. Textile wastewater includes a large variety of dyes and chemicals and needs treatments. This manuscript presents a facile method for removing dyes from the textile wastewater by using TiO2/SiO2-based nanocomposite (Fe3O4@SiO2/TiO2) under UV irradiation. This magnetic nanocomposite, as photocatalytically active composite, is synthesized via solution method in mild conditions....

  11. FABRICATION AND PROPERTIES OF SiO2/ZIRCONIUM PHOSPHATE-B2O3-SiO2 ANTI-OXIDATION COATINGS FOR Cf/SiC COMPOSITES

    OpenAIRE

    Xue-Jin Yang; Yu-Di Zhang; Zhang Chang-Rui; Li Bin

    2015-01-01

    This paper reports the fabrication of a novel SiO2/zirconium phosphate (ZrP)-B2O3-SiO2 double-layer coating on Cf/SiC composites via brushing and sol-gel routes for achieving better anti-oxidation performance. The composition of raw materials and sintering temperature were studied to explore the possibility of development of ZrP coatings to meet the demand for oxidation resistance at high temperature. It was attempted to improve the self-healing ability of coatings via an additional SiO2 laye...

  12. Tailoring the nickel nanoparticles anchored on the surface of Fe3O4@SiO2 spheres for nanocatalysis

    Science.gov (United States)

    Ding, Lei; Zhang, Min; Zhang, Yanwei; Yang, Jinbo; Zheng, Jing; Hayat, Tasawar; Alharbi, Njud S.; Xu, Jingli

    2017-08-01

    Herein, we report an efficient and universal strategy for synthesizing a unique triple-shell structured Fe3O4@SiO2@C-Ni hybrid composite. Firstly, the Fe3O4 cores were synthesized by hydrothermal reaction, and sequentially coated with SiO2 and a thin layer of nickel-ion-doped resin-formaldehyde (RF-Ni2+) using an extended Stöber method. This was followed by carbonization to produce the Fe3O4@SiO2@C-Ni nanocomposites with metallic nickel nanoparticles embedded in an RF-derived thin graphic carbon layer. Interestingly, the thin SiO2 spacer layer between RF-Ni2+ and Fe3O4 plays a critical role on adjusting the size and density of the nickel nanoparticles on the surface of Fe3O4@SiO2 nanospheres. The detailed tailoring mechanism is explicitly discussed, and it is shown that the iron oxide core can react with the nickel nanoparticles without the SiO2 spacer layer, and the size and density of the nickel nanoparticles can be effectively controlled when the SiO2 layer exits. The multifunctional composites exhibit a significantly enhanced catalytic performance in the reduction of 4-nitrophenol (4-NP).

  13. Ferroelectric/Dielectric Double Gate Insulator Spin-Coated Using Barium Titanate Nanocrystals for an Indium Oxide Nanocrystal-Based Thin-Film Transistor.

    Science.gov (United States)

    Pham, Hien Thu; Yang, Jin Ho; Lee, Don-Sung; Lee, Byoung Hun; Jeong, Hyun-Dam

    2016-03-23

    Barium titanate nanocrystals (BT NCs) were prepared under solvothermal conditions at 200 °C for 24 h. The shape of the BT NCs was tuned from nanodot to nanocube upon changing the polarity of the alcohol solvent, varying the nanosize in the range of 14-22 nm. Oleic acid-passivated NCs showed good solubility in a nonpolar solvent. The effect of size and shape of the BT NCs on the ferroelectric properties was also studied. The maximum polarization value of 7.2 μC/cm(2) was obtained for the BT-5 NC thin film. Dielectric measurements of the films showed comparable dielectric constant values of BT NCs over 1-100 kHz without significant loss. Furthermore, the bottom gate In2O3 NC thin film transistors exhibited outstanding device performance with a field-effect mobility of 11.1 cm(2) V(-1) s(-1) at a low applied gate voltage with BT-5 NC/SiO2 as the gate dielectric. The low-density trapped state was observed at the interface between the In2O3 NC semiconductor and the BT-5 NCs/SiO2 dielectric film. Furthermore, compensation of the applied gate field by an electric dipole-induced dipole field within the BT-5 NC film was also observed.

  14. The Role of SiO2 Gas in the Operation of Anti-Corrosion Coating Produced by PVD

    Directory of Open Access Journals (Sweden)

    Meysam Zarchi

    2015-09-01

    Full Text Available This study examined theSiO2 gas present in the coatings used in corrosion industry.These layers have been created by physical vapor deposition (PVD, with an appropriate performance. Sublimation of SiO2is used to protect PVD aluminum flakes from water corrosionand to generate highly porous SiO2 flakes with holes in the nanometer range. SiOx/Al/SiOx sandwiches were made as well as Ag loaded porous SiO2 as antimicrobial filler.

  15. Role of the interface region on the optoelectronic properties of silicon nanocrystals embedded in SiO2

    International Nuclear Information System (INIS)

    Daldosso, N.; Dalba, G.; Fornasini, P.; Grisenti, R.; Pavesi, L.; Luppi, M.; Magri, R.; Ossicini, S.; Degoli, E.; Rocca, F.; Boninelli, S.; Priolo, F.; Spinella, C.; Iacona, F.

    2003-01-01

    Light-emitting silicon nanocrystals embedded in SiO 2 have been investigated by x-ray absorption measurements in total electron and photoluminescence yields, by energy filtered transmission electron microscopy and by ab initio total energy calculations. Both experimental and theoretical results show that the interface between the silicon nanocrystals and the surrounding SiO 2 is not sharp: an intermediate region of amorphous nature and variable composition links the crystalline Si with the amorphous stoichiometric SiO 2 . This region plays an active role in the light-emission process

  16. Influence of SiO2/Al2O3 Molar Ratio on Phase Composition and Surfaces Quality of Aluminum Silicate Sanitary Glazes in the SiO2-Al2O3-CaO-Na2O System

    Directory of Open Access Journals (Sweden)

    Leśniak M.

    2016-12-01

    Full Text Available This paper presents the results of research on aluminum silicate sanitary glazes in the SiO2-Al2O3-CaO-Na2O system with different SiO2/Al2O3 molar ratio. XRD, SEM-EDS and FITR measurement indicated that SiO2/Al2O3 molar ratio has a significant impact on the phase composition of the obtained glazes. Glass-ceramic glazes were obtained that consisted of both the glass phase and pseudowollastonite (Ca3[SiO3]3 or anorthite (Ca[Al2Si2O8] crystals. Subsequently, the influence of phase composition on surface quality (roughness was examined for the obtained samples. On the basis of the conducted examination of glaze surface roughness was observed that glazes of extreme SiO2/Al2O3 molar ratio are characterized with greatest surface roughness when compared to other glazes.

  17. Photocatalytic Removal of Phenol under Natural Sunlight over N-TiO2-SiO2 Catalyst: The Effect of Nitrogen Composition in TiO2-SiO2

    Directory of Open Access Journals (Sweden)

    Viet-Cuong Nguyen

    2009-01-01

    Full Text Available In this present work, high specific surface area and strong visible light absorption nitrogen doped TiO2-SiO2 photocatalyst was synthesized by using sol-gel coupled with hydrothermal treatment method. Nitrogen was found to improve the specific surface area while it also distorted the crystal phase of the resulting N-TiO2-SiO2 catalyst. As the N/ (TiO2-SiO2 molar ratio was more than 10%, the derived catalyst presented the superior specific surface area up to 260 m2/g. Nevertheless, its photoactivity towards phenol removal was observed to significantly decrease, which could results from the too low crystallinity. The nitrogen content in N-TiO2-SiO2 catalyst was therefore necessary to be optimized in terms of phenol removal efficiency and found at ca. 5%. Under UVA light and natural sunlight irradiation of 80 min, N(5%-TiO2-SiO2 catalyst presented the phenol decomposition efficiencies of 68 and 100%, respectively. It was also interestingly found in this study that the reaction rate was successfully expressed using a Langmuir-Hinshelwood (L-H model, indicating the L-H nature of photocatalytic phenol decomposition reaction on the N-TiO2-SiO2 catalyst.

  18. Experimental research of stability of emulsion systems with SIO2 nanoparticles.

    Directory of Open Access Journals (Sweden)

    Zeigman Yury Veniaminovich

    2017-10-01

    Full Text Available Since the beginning of the 21st century scientific research devoted to properties of nanosized particles and their industrial application in the industry of oil and gas fields development has been rapidly evolving. The use of nanosized particles can significantly rise efficiency of technological solutions, and that fact determines this research area as the most promising today. In the area of oil and gas fields development one of the general application for nanoparticles is the development of high-performance technological fluids with new or improved physico-chemical properties. The ability of nanoparticles to modify wettability of the rock surface and to be fixed on the adsorption-solvation stratums of globules makes them a unique tool to regulate physicochemical properties of technological fluids and physical properties of rocks.The article reveals the results of a new stage in the research of physical properties of emulsion systems with silicon dioxide nanoparticles (SiO2. The research carried out within the framework of international project «Development and implementation of water-blocking agents based on the SiO2 nanoparticles application». The results of comparative tests of stability of classical emulsions (O/W and W/O types and emulsion systems modified with SiO2 nanoparticles with different wettability characteristics (hydrophilic or hydrophobic are presented. According to the results of comparative tests, it has been determined that the stability of most samples of modified emulsion systems containing hydrophilic or hydrophobic silica nanoparticles exceeds the stability of classical emulsions by more than 100%. In the course of comparative studies, the following types of experiments were performed: measurement of aggregate stability, electrostability and thermal stability of samples. The paper is a continuation of the complex research which has been published in [1].

  19. Deposition of High-Quality SiO2 Insulating Films at Low Temperatures by means of Remote PECVD

    NARCIS (Netherlands)

    Boogaard, A.; Roesthuis, R.; Brunets, I.; Aarnink, Antonius A.I.; Kovalgin, Alexeij Y.; Holleman, J.; Wolters, Robertus A.M.; Schmitz, Jurriaan

    2008-01-01

    Silicon dioxide films were deposited by means of remote inductively coupled plasma enhanced chemical vapor deposition (ICPECVD) in Ar-N2O-SiH4 plasma at 150 °C and pressures between 1 and 6 Pa. The gas phase contained 0.08% of SiH4 and 18% of N2O. We observed that, at a total pressure of 1 Pa, the

  20. Thermal conductivity and electrical properties of hybrid SiO2-graphene naphthenic mineral oil nanofluid as potential transformer oil

    Science.gov (United States)

    Qing, Soo Hui; Rashmi, W.; Khalid, M.; Gupta, T. C. S. M.; Nabipoor, M.; Taghi Hajibeigy, Mohammad

    2017-01-01

    Hybrid SiO2-graphene nanoparticles were synthesised by sol gel centrifugation technique under four different pH levels ranging from 9 to 12. Stability, thermal conductivity, viscosity and electrical conductivity of hybrid SiO2-graphene and pure graphene dispersed in naphthenic oil were investigated. Nanofluids were synthesied at three different nanoparticle concentrations (0.01, 0.04 and 0.08 wt%) while the temperature was varied from 20 °C to 100 °C. Field emission scanning electron microscopy (FESEM), x-ray spectroscopy and Fourier transform infrared (FTIR) spectrometer show successful coating of SiO2 on graphene surface. The growth units and size distribution of SiO2 nanoparticles increased with pH level. Moreover, the presence of SiO2 improved the dispersion behaviour of the nanofluid as confirmed by visual observation and UV-Vis studies. Zeta potential measurements show the hybrid nanofluids at pH 11 are most stable due to its optimum amount and size of SiO2 coated on graphene surface while at pH 12 shows least stability due to precipitation. The presence of SiO2 on graphene further enhanced the thermal conductivity by 80% at pH 9. Also, the viscosity of hybrid nanofluids was higher than pure graphene based nanofluids due to increase in density and particle size. Moreover, the addition of hybrid SiO2-graphene nanoparticles significantly reduced the electrical conductivity enhancement of base fluid from 557% to 97%.

  1. CMOS Compatible Nonvolatile Memory Devices Based on SiO2/Cu/SiO2 Multilayer Films

    Science.gov (United States)

    Wang, Yan; Liu, Qi; Lu, Hang-Bing; Long, Shi-Bing; Zhang, Sen; Li, Ying-Tao; Lian, Wen-Tai; Yang, Jian-Hong; Liu, Ming

    2011-07-01

    We systematically investigate the resistive switching characteristics of SiO2 films with a Cu/SiO2/Cu/SiO2/Pt multilayer structure. The device exhibits good resistive switching performances, including a high ON/OFF resistance ratio (>103), good retention characteristic (>104s), satisfactory switching endurance (>200 cycles), a fast programming speed (<100 ns) and a high device yield (~100%). Considering these results, SiO2-based memories have highly promising applications for nonvolatile memory devices.

  2. The Obtaining of Nano Oxide Systems SiO2-REE with Alkoxide Technology

    Science.gov (United States)

    Amelina, Anna; Grinberg, Evgenii

    A lot of oxides systems with REE as dopants are used in catalytic processes in organic synthesis. They are very perspectives as thermostable coating in aerospace technics. These systems are usually based on silicon or aluminium oxides and doped with rare-earth elements. This systems can be produced by different methods. One of the most perspective of them is “sol-gel”-method with silicium, aluminium and rare-earth alkoxides as a precursor of doped silica and alumina, or their derivatives. Thus the obtaining of composite SiO _{2} - REE oxide materials by the hydrolysis doped with rare-earth elements was suggested. Some of alcoholate derivatives such as El(OR)n were used in this processes. The SiO _{2}- REE oxides were precipitated during the sol-gel process, where tetraethoxysilane (TEOS) as used as SiO _{2} sources. Also it is known that alkoxides of alkali metals, including lithium alkoxides, are widely used in industry and synthetic chemistry, as well as a source of lithium in various mixed oxide compositions, such as lithium niobate, lithium tantalate or lithium silicate. Therefore, we attempted to obtain the lithium silicate, which is also doped with rare-earth elements. Lithium silicate was obtained by alkaline hydrolysis of tetraethoxysilane with lithium alkoxide. Lithium alkoxide were synthesized by dissolving at metal in the corresponding alcohol are examined. The dependence of the rate of dissolving of the metal on the method of mixing of the reaction mixture and the degree of metal dispersion was investigated. The mathematical model of the process was composed and also optimization of process was carried out. Some oxide SiO _{2}, Al _{2}O _{3} and rare-earth nanostructured systems were obtained by sol-gel-method. The size of particle was determined by electron and X-ray spectroscopy and was in the range of 5 - 15 nm. Purity of this oxide examples for contaminating of heavy metals consists n.(1E-4...1E-5) wt%. Sols obtained by this method may be used for producing of thin coats on ceramics and metallic surfaces.

  3. Friction and wear properties of ZrO2/SiO2 composite nanoparticles

    International Nuclear Information System (INIS)

    Li Wei; Zheng Shaohua; Cao Bingqiang; Ma Shiyu

    2011-01-01

    In this article, the lubrication properties of ZrO 2 /SiO 2 composite nanoparticles modified with aluminum zirconium coupling agent as additives in lubricating oil under variable applied load and concentration fraction were reported. It was demonstrated that the modified nanoparticles as additives in lubrication can effectively improve the lubricating properties. Under an optimized concentration of 0.1 wt%, the average friction coefficient was reduced by 16.24%. This was because the nanoparticles go into the friction zone with the flow of lubricant, and then the sliding friction changed to rolling friction with a result of the reduction of the friction coefficient.

  4. Enhanced photoluminescence by resonant absorption in Er-doped SiO2/Si microcavities

    Science.gov (United States)

    Schubert, E. F.; Hunt, N. E. J.; Vredenberg, A. M.; Harris, T. D.; Poate, J. M.; Jacobson, D. C.; Wong, Y. H.; Zydzik, G. J.

    1993-11-01

    Si/SiO2 Fabry-Perot microcavities with an Er-implanted SiO2 active region resonant at the Er excitation wavelength of 980 nm have been realized. Room-temperature photoluminescence measurements reveal that the Er luminescence intensity increases by a factor of 28 as compared to a structure without cavity enhancement. We show that the experimental enhancement of the luminescence intensity agrees with theory if optical absorption of the 980 nm light in the Si layers of the cavity and reduced mirror reflectivities are taken into account.

  5. Scanning electron microscopy study of protein immobilized on SIO2 Sol-gel surfaces

    Directory of Open Access Journals (Sweden)

    Assis O.B.G.

    2003-01-01

    Full Text Available Uniform attachment of enzymes to solid surfaces is essential in the development of bio and optical sensor devices. Immobilization by adsorption according to hydrophilic or hydrophobic nature is dependent on the charges and defects of the support surfaces. Sol-gel SiO2 densified glass surfaces, frequently used as supports for protein immobilization, are evaluated via scanning electron microscopy. The model protein is globular enzyme lysozyme, deposited by adsorption on functionalized surfaces. Formation of a protein layer is confirmed by FTIR spectroscopy, and the SEM images suggest discontinuous adsorption in areas where cracks predominate on the glass surface.

  6. Diffraction of slow neutrons by holographic SiO2 nanoparticle-polymer composite gratings

    Science.gov (United States)

    Klepp, J.; Pruner, C.; Tomita, Y.; Plonka-Spehr, C.; Geltenbort, P.; Ivanov, S.; Manzin, G.; Andersen, K. H.; Kohlbrecher, J.; Ellabban, M. A.; Fally, M.

    2011-07-01

    Diffraction experiments with holographic gratings recorded in SiO2 nanoparticle-polymer composites have been carried out with slow neutrons. The influence of parameters such as nanoparticle concentration, grating thickness, and grating spacing on the neutron-optical properties of such materials has been tested. Decay of the grating structure along the sample depth due to disturbance of the recording process becomes an issue at grating thicknesses of about 100 microns and larger. This limits the achievable diffraction efficiency for neutrons. As a solution to this problem, the Pendellösung interference effect in holographic gratings has been exploited to reach a diffraction efficiency of 83% for very cold neutrons.

  7. Disordered electrical potential observed on the surface of SiO2 by electric field microscopy

    International Nuclear Information System (INIS)

    GarcIa, N; Yan Zang; Ballestar, A; Barzola-Quiquia, J; Bern, F; Esquinazi, P

    2010-01-01

    The electrical potential on the surface of ∼300 nm thick SiO 2 grown on single-crystalline Si substrates has been characterized at ambient conditions using electric field microscopy. Our results show an inhomogeneous potential distribution with fluctuations up to ∼0.4 V within regions of 1 μm. The potential fluctuations observed at the surface of these usual dielectric holders of graphene sheets should induce strong variations in the graphene charge densities and provide a simple explanation for some of the anomalous behaviors of the transport properties of graphene.

  8. SiO2-supported Pt particles studied by electron microscopy

    International Nuclear Information System (INIS)

    Wang, D.; Penner, S.; Su, D.S.; Rupprechter, G.; Hayek, K.; Schloegl, R.

    2003-01-01

    Regularly grown Pt particles supported by amorphous SiO 2 were heated in hydrogen at 873 K after an oxidising treatment. The morphological and structural changes were studied by electron microscopy. Platinum silicides Pt 3 Si with L1 2 (Cu 3 Au) structure, monoclinic Pt 3 Si and tetragonal Pt 12 Si 5 were identified after the treatment. The mechanisms of coalescence of the particles and the formation of irregular large particles are suggested. A topotactic structural transformation accompanied with the migration of Si from the substrate to the particles are suggested to take place during Pt 3 Si formation

  9. Experimental study of viscosity properties of emulsion system with SiO2 nanoparticles.

    Directory of Open Access Journals (Sweden)

    ZEIGMAN Yury Veniaminovich,

    2017-04-01

    Full Text Available When oil production is increasing due to intensive oilfield development methods supporting seam pressure by water injection oil producers face the problem of displacement agent break in more permeable intervals of petroleum reservoir. That leads to dramatic increase of product inundation for well stock and decrease of economic efficiency for well performance. Nowadays the petroleum engineers have proposed more than 100 technologies designed to restrict water inflows and flooding agent to bottom-hole zone of the production wells. The water inflows restriction technologies are distinguished by the type of applied chemical compositions and the way how the chemical compositions are delivered to bottom-hole zone. The analysis of the currently applied chemical compositions has allowed authors to reveal the common feature. The common feature is that the currently applied chemical compositions are non-selective and they produce isolating or blocking effect onto water-saturated and oil-saturated zones of the petroleum reservoir. The application of the nonselective high-stability chemical compositions leads to uncontrolled colmatation of all treated intervals and makes it difficult to involve them into filtration process in future. This work presents the technology for the selective reservoir stimulation based on emulsion systems with SiO2 nanoparticles content and gelling acid composition. The technology was developed for complex impact on formation system, that achieved by blocking water-saturated intervals of reservoir and stimulation of less permeable oil-saturated intervals of reservoir. The paper shows the results of complex laboratory experiments to study viscosity parameters of emulsion systems with SiO2 nanoparticles content. The results of the experiments revealed the ability of the SiO2 nanoparticles to rise dynamic viscosity of the different type of emulsion systems: oil in water and water in oil. Test for thermostability of the modified emulsion systems showed stability of the systems under 80о C. In addition, the modified emulsion systems kept the ability to decrease significantly viscosity in the reaction with hydrocarbons, i.e. the emulsion systems with SiO2 nanoparticles are selective compositions for the water-inflows restriction.

  10. Ordering at Si(111)/o-Si and Si(111)/SiO2 Interfaces

    DEFF Research Database (Denmark)

    Robinson, I. K.; Waskiewicz, W. K.; Tung, R. T.

    1986-01-01

    X-ray diffraction has been used to measure the intensity profile of the two-dimensional rods of scattering from a single interface buried inside a bulk material. In both Si(111)/a-Si and Si(111)/SiO2 examples there are features in the perpendicular-momentum-transfer dependence which are not expec...... are not expected from an ideal sharp interface. The diffraction profiles are explained by models with partially ordered layers extending into the amorphous region. In the Si(111)/a-Si case there is clear evidence of stacking faults which are attributed to residual 7×7 reconstruction....

  11. High ink absorption performance of inkjet printing based on SiO2@Al13 core-shell composites

    Science.gov (United States)

    Chen, YiFan; Jiang, Bo; Liu, Li; Du, Yunzhe; Zhang, Tong; Zhao, LiWei; Huang, YuDong

    2018-04-01

    The increasing growth of the inkjet market makes the inkjet printing more necessary. A composite material based on core-shell structure has been developed and applied to prepare inkjet printing layer. In this contribution, the ink printing record layers based on SiO2@Al13 core-shell composite was elaborated. The prepared core-shell composite materials were characterized by X-ray photoelectron spectroscopy (XPS), zeta potential, X-ray diffraction (XRD), scanning electron microscopy (SEM). The results proved the presence of electrostatic adsorption between SiO2 molecules and Al13 molecules with the formation of the well-dispersed system. In addition, based on the adsorption and the liquid permeability analysis, SiO2@Al13 ink printing record layer achieved a relatively high ink uptake (2.5 gmm-1) and permeability (87%), respectively. The smoothness and glossiness of SiO2@Al13 record layers were higher than SiO2 record layers. The core-shell structure facilitated the dispersion of the silica, thereby improved its ink absorption performance and made the clear printed image. Thus, the proposed procedure based on SiO2@Al13 core-shell structure of dye particles could be applied as a promising strategy for inkjet printing.

  12. Synergetic scattering of SiO2 and Ag nanoparticles for light-trapping enhancement in organic bulk heterojunction

    Science.gov (United States)

    Yang, Huan; Ding, Qiuyu; Li, Ben Q.; Jiang, Xinbing; Zhang, Manman

    2018-02-01

    Though noble metal nanoparticles have been explored to enhance the performance of the organic solar cell, effect of dielectric nanoparticles, and coupled effect of dielectric and metal nanoparticles, have rarely been reported, if at all, on organic solar cell. This work reports an experimental study on synergetic scattering of SiO2 and Ag nanoparticles in a bulk organic heterojunction for the broadband light absorption enhancement. The wavelength scale SiO2 particles were arranged as a monolayer on the surface of the solar cell to guide incident light into the active layer and prolong the effective optical length of the entered energy. This is achieved by the excitation of whispering gallery modes in SiO2 nanoparticles and by leaky mode radiation. When small size Ag particles were incorporated into the transport layer of the solar cell, synergetic scattering of SiO2 and Ag nanoparticles is formed by coupling of the whispering gallery mode of closely arranged SiO2 particles atop and collaborative localized surface plasma resonance scattering of Ag nanoparticles dispersed in the transport layer. As a result, the performance of the organic solar cell is greatly enhanced and the short-circuit current density has an improvement of 42.47%. Therefore, the organic solar cell incorporated with SiO2 and Ag particles presents a meaningful strategy to achieve high energy-harvesting performance. [Figure not available: see fulltext.

  13. La cascarilla de arroz como fuente de SiO2

    Directory of Open Access Journals (Sweden)

    Claudia Andrea Arcos

    2007-01-01

    Full Text Available La cascarilla de arroz calcinada presenta un alto contenido de sílice. Este trabajo estudió la naturaleza de la fracción orgánica donde se nuclean los complejos de sílice y las condiciones óptimas para la síntesis de SiO2. La cascarilla de arroz y la sílice se analizaron utilizando microscopía electrónica de barrido (MEB, difracción de rayos de X (DRX, infrarrojo con transformada de Fourier (FTIR y análisis térmico diferencial (ATD. La cascarilla fue tratada con HCl para eliminar impurezas como Fe, Na, K, entre otros. Los resultados obtenidos muestran que en la parte externa de la cascarilla, constituida de celulosa, se nuclea la sílice, y el SiO2 obtenido de la misma es amorfo, con un alto valor de superficie específica (~277 m2/g, morfología no definida y tamaño nanométrico (< 200 nm.

  14. Amorphous Ge quantum dots embedded in SiO2 formed by low energy ion implantation

    International Nuclear Information System (INIS)

    Zhao, J. P.; Huang, D. X.; Jacobson, A. J.; Chen, Z. Y.; Makarenkov, B.; Chu, W. K.; Bahrim, B.; Rabalais, J. W.

    2008-01-01

    Under ultrahigh vacuum conditions, extremely small Ge nanodots embedded in SiO 2 , i.e., Ge-SiO 2 quantum dot composites, have been formed by ion implantation of 74 Ge + isotope into (0001) Z-cut quartz at a low kinetic energy of 9 keV using varying implantation temperatures. Transmission electron microscopy (TEM) images and micro-Raman scattering show that amorphous Ge nanodots are formed at all temperatures. The formation of amorphous Ge nanodots is different from reported crystalline Ge nanodot formation by high energy ion implantation followed by a necessary high temperature annealing process. At room temperature, a confined spatial distribution of the amorphous Ge nanodots can be obtained. Ge inward diffusion was found to be significantly enhanced by a synergetic effect of high implantation temperature and preferential sputtering of surface oxygen, which induced a much wider and deeper Ge nanodot distribution at elevated implantation temperature. The bimodal size distribution that is often observed in high energy implantation was not observed in the present study. Cross-sectional TEM observation and the depth profile of Ge atoms in SiO 2 obtained from x-ray photoelectron spectra revealed a critical Ge concentration for observable amorphous nanodot formation. The mechanism of formation of amorphous Ge nanodots and the change in spatial distribution with implantation temperature are discussed

  15. Systematic investigation of the reactive ion beam sputter deposition process of SiO2

    Science.gov (United States)

    Mateev, Maria; Lautenschläger, Thomas; Spemann, Daniel; Finzel, Annemarie; Gerlach, Jürgen W.; Frost, Frank; Bundesmann, Carsten

    2018-02-01

    Ion beam sputter deposition (IBSD) is an established physical vapour deposition technique that offers the opportunity to tailor the properties of film-forming particles and, consequently, film properties. This is because of two reasons: (i) ion generation and acceleration (ion source), sputtering (target) and film deposition (substrate) are locally separated. (ii) The angular and energy distribution of sputtered target atoms and scattered primary particles depend on ion incidence angle, ion energy, and ion species. Ion beam sputtering of a Si target in a reactive oxygen atmosphere was used to grow SiO2 films on silicon substrates. The sputtering geometry, ion energy and ion species were varied systematically and their influence on film properties was investigated. The SiO2 films are amorphous. The growth rate increases with increasing ion energy and ion incidence angle. Thickness, index of refraction, stoichiometry, mass density and surface roughness show a strong correlation with the sputtering geometry. A considerable amount of primary inert gas particles is found in the deposited films. The primary ion species also has an impact on the film properties, whereas the influence of the ion energy is rather small.

  16. Photon Irradiation Response on Ge and Al-Doped SiO2 Optical Fibres

    Science.gov (United States)

    Yaakob, Nor Haliza; Wagiran, Husin; Ramli, Ahmad Termizi; Ali, Hassan; Asni, Hazila

    2010-07-01

    Recently, research groups have reported a number of radiation effects on the applications of SiO2 optical fibres with possible use as dosimeter material because these optical fibre provide a good basis for medical radiation dosimetry. The objective of this study is to investigate the thermoluminescence response and fading characteristic for germanium and aluminium doped SiO2 optical fibres with photon irradiation. These optical fibres are placed in solid phantom and irradiated to 6 and 10 MV photon beam at dose ranging from 0.06 Gy to 0.24 Gy using Primus MLC 3339 linear accelerator at Hospital Sultan Ismail, Johor Bahru. In fading studies, the TL measurements were continued up to 14 days period. The optical fibres will produce glow curves whereby the information is then analyzed. Al and Ge-doped optical fibres have a linear dose-TL signal relationship that is proportionality between the TL signal and the doses. Comparison for TL response between different linear accelerator showed a good agreement because these optical fibres also have a linear dose-TL signal relationship even using different equipments.

  17. Effect of SiO2 coating in bolometric Ge light detectors for rare event searches

    International Nuclear Information System (INIS)

    Beeman, J.W.; Gentils, A.; Giuliani, A.; Mancuso, M.; Pessina, G.; Plantevin, O.; Rusconi, C.

    2013-01-01

    In germanium-based light detectors for scintillating bolometers, a SiO 2 anti-reflective coating is often applied on the side of the germanium wafer exposed to light with the aim to improve its light collection efficiency. In this paper, we report about a measurement, performed in the temperature range 25–35 mK, of the light-collection increase obtained thanks to this method, which resulted to be of the order of 20%. The procedure followed has been carefully selected in order to minimize systematic effects. The employed light sources have the same spectral features (peaking at ∼630nm wavelength) that will characterize future neutrinoless double beta decay experiments on the isotope 82 Se and based on ZnSe crystals, such as LUCIFER. The coupling between source and light detector reproduces the configuration used in scintillating bolometers. The present measurement clarifies the role of SiO 2 coating and describes a method and a set-up that can be extended to the study of other types of coatings and luminescent materials

  18. Effect of SiO2 coating in bolometric Ge light detectors for rare event searches

    Science.gov (United States)

    Beeman, J. W.; Gentils, A.; Giuliani, A.; Mancuso, M.; Pessina, G.; Plantevin, O.; Rusconi, C.

    2013-05-01

    In germanium-based light detectors for scintillating bolometers, a SiO2 anti-reflective coating is often applied on the side of the germanium wafer exposed to light with the aim to improve its light collection efficiency. In this paper, we report about a measurement, performed in the temperature range 25-35 mK, of the light-collection increase obtained thanks to this method, which resulted to be of the order of 20%. The procedure followed has been carefully selected in order to minimize systematic effects. The employed light sources have the same spectral features (peaking at ˜630 nm wavelength) that will characterize future neutrinoless double beta decay experiments on the isotope 82Se and based on ZnSe crystals, such as LUCIFER. The coupling between source and light detector reproduces the configuration used in scintillating bolometers. The present measurement clarifies the role of SiO2 coating and describes a method and a set-up that can be extended to the study of other types of coatings and luminescent materials.

  19. Surface Property and Stability of Transparent Superhydrophobic Coating Based on SiO2-Polyelectrolyte Multilayer

    Directory of Open Access Journals (Sweden)

    Sunisa JINDASUWAN

    2016-05-01

    Full Text Available Artificial superhydrophobic films were deposited onto a glass slide by performing layer-by-layer deposition of 3.5 bilayers of poly(allylamine hydrochloride/ poly(acrylic acid polyelectrolyte, followed by a layer of SiO2 nanoparticles of various amounts to enhance the surface roughness and a fluorosilane to reduce the surface free energy. Higher SiO2 content incorporated into the films resulted in rougher surface and higher water contact angle. The total surface free energy determined by using the Owens-Wendt equation dramatically decreased from 31.46 mJ·m-2 for the film having the relatively flat surface to only 1.16 mJ·m-2 for the film having the highest surface roughness of 60.2 ± 1.1 nm. All the films were optically transparent and had excellent adhesion based on the peel test. Indoor and accelerated weathering tests revealed good weathering stability.DOI: http://dx.doi.org/10.5755/j01.ms.22.2.12952

  20. "Embedded Emitters": Direct bandgap Ge nanodots within SiO2

    Science.gov (United States)

    Kuo, M. H.; Chou, S. K.; Pan, Y. W.; Lin, S. D.; George, T.; Li, P. W.

    2016-12-01

    Microdisk-arrays of vertically stacked 30-70 nm Ge nanodots embedded within SiO2 were fabricated using thermal oxidation of Si0.75Ge0.25 abacus-shaped pillars and followed by post-annealing in oxygen-deficient conditions. The Ge nanodots are subjected to increasing quantum-confinement and tensile-strain by reducing dot size. We show that considerable quantum-confinement and tensile-strain can be generated within 30 nm Ge nanodots embedded in SiO2, as evidenced by large Raman red shifts for the Ge-Ge phonon lines in comparison to that for bulk Ge. These large quantum-confinement and tensile-strain facilitate direct-bandgap photoluminescence experimentally observed for the Ge nanodots, and are consistent with the strain-split photoluminescence transitions to the light-hole (LH) and heavy-hole (HH) valence bands at 0.83 eV and 0.88 eV, respectively. Time-resolved photoluminescence measurements conducted from 10-100 K show temperature-insensitive carrier lifetimes of 2.7 ns and 5 ns for the HH and LH valence-band transitions, respectively, providing additional strong evidence of direct bandgap photoluminescence for tensile-strained Ge nanodots.

  1. Location of trapped charge in aluminum-implanted SiO2

    International Nuclear Information System (INIS)

    DiMaria, D.J.; Young, D.R.; Hunter, W.R.; Serrano, C.M.

    1978-01-01

    The position of the centroid of electrons trapped on sites resulting from aluminum implantation into SiO 2 is measured by using the photo I-V technique for energies from 15 to 40 keV, oxide thicknesses from 49 to 140 nm, and post-implant annealing temperature from 600 to 1050 0 C in N 2 for 30 min. The centroid of the trapped electrons is found to be identical to that of the implanted aluminum from SIMS measurements, regardless of annealing temperature from 600 to 1050 0 C, and located closer (by less than 9 nm) to the Al--SiO 2 interface than predicted from the Lindhard-Scharff-Schott (LSS) calculations of Gibbons, Johnson, and Mylroie. Comparison of centroids determined from photo I-V and SIMS measurements as a function of SiO 2 thickness also implies that the distributions of the ions and negative trapped charge are the same. The trapping behavior of these sites is discussed in the accompanying paper by Young et al

  2. Modification by SiO2 of Alumina Support for Light Alkane Dehydrogenation Catalysts

    Directory of Open Access Journals (Sweden)

    Giyjaz E. Bekmukhamedov

    2016-10-01

    Full Text Available Due to the continuously rising demand for C3–C5 olefins it is important to improve the performance of catalysts for dehydrogenation of light alkanes. In this work the effect of modification by SiO2 on the properties of the alumina support and the chromia-alumina catalyst was studied. SiO2 was introduced by impregnation of the support with a silica sol. To characterize the supports and the catalysts the following techniques were used: low-temperature nitrogen adsorption; IR-spectroscopy; magic angle spinning 29Si nuclear magnetic resonance; temperature programmed desorption and reduction; UV-Vis-, Raman- and electron paramagnetic resonance (EPR-spectroscopy. It was shown that the modifier in amounts of 2.5–7.5 wt % distributed on the support surface in the form of SiOx-islands diminishes the interaction between the alumina support and the chromate ions (precursor of the active component. As a result, polychromates are the compounds predominantly stabilized on the surface of the modified support; under thermal activation of the catalyst and are reduced to the amorphous Cr2O3. This in turn leads to an increase in the activity of the catalyst in the dehydrogenation of isobutane.

  3. Formation Mechanism of SiO2-Type Inclusions in Si-Mn-Killed Steel Wires Containing Limited Aluminum Content

    Science.gov (United States)

    Wang, Kunpeng; Jiang, Min; Wang, Xinhua; Wang, Ying; Zhao, Haoqian; Cao, Zhanmin

    2015-10-01

    The origin, formation mechanism, and evolution of SiO2-type inclusions in Si-Mn-killed steel wires were studied by pilot trials with systematical samplings at the refining ladle, casting tundish, as-cast bloom, reheated bloom, and hot-rolled rods. It was found that the inclusions in tundish were well controlled in the low melting point region. By contrast, MnO-SiO2-Al2O3 inclusions in the as-cast bloom were with compositions located in the primary region of SiO2, and most CaO-SiO2-Al2O3-MnO inclusions lied in primary phase region of anorthite. Therefore, precipitation of SiO2 particles in MnO-SiO2-Al2O3 inclusions can be easier than in CaO-SiO2-Al2O3-MnO inclusions to form dual-phase inclusions in the as-cast bloom. Thermodynamic calculation by the software FactSage 6.4 (CRCT-ThermFact Inc., Montréal, Canada) showed that mass transfer between liquid steel and inclusions resulted in the rise of SiO2 content in inclusions from tundish to as-cast bloom and accelerated the precipitation of pure SiO2 phase in the formed MnO-SiO2-Al2O3 inclusions. As a result, the inclusions characterized by dual-phase structure of pure SiO2 in MnO-SiO2-Al2O3 matrix were observed in both as-cast and reheated blooms. Moreover, the ratio of such dual-phase SiO2-type inclusions witnessed an obvious increase from 0 to 25.4 pct before and after casting, whereas it changed little during the reheating and rolling. Therefore, it can be reasonably concluded that they were mainly formed during casting. Comparing the evolution of the inclusions composition and morphology in as-cast bloom and rolled products, a formation mechanism of the SiO2-type inclusions in wire rods was proposed, which included (1) precipitation of SiO2 in the formed MnO-SiO2-Al2O3 inclusion during casting and (2) solid-phase separation of the undeformed SiO2 precipitation from its softer MnO-SiO2-Al2O3 matrix during multipass rolling.

  4. Formation of thin DLC films on SiO2/Si substrate using FCVAD technique

    International Nuclear Information System (INIS)

    Bootkul, D.; Intarasiri, S.; Aramwit, C.; Tippawan, U.; Yu, L.D.

    2013-01-01

    Diamond-like carbon (DLC) films deposited on SiO 2 /Si substrate are attractive for novel sensitive and selective chemical sensors. According to the almost never ending of size reduction, a nm-thickness layer of the film is greatly required. However, formation of such a very thin DLC film on SiO 2 /Si substrate is challenging. In this experiment, DLC films were formed using our in-house Filtered Cathodic Vacuum Arc Deposition (FCVAD) facility by varying the bias voltage of 0 V, −250 V and −450 V with the arc voltage of 350 V, 450 V, 550 V, 650 V and 750 V for 10 min. Raman spectroscopy was applied for characterization of the film qualities and Transmission Electron Microscopy (TEM) was applied for cross sectional analysis. Results showed that films of thickness ranging from 10–50 nm were easily acquired depending on deposition conditions. Deconvolution of Raman spectra of these samples revealed that, when fixing the substrate bias but increasing the arc voltage from 350 to 750 V, the ratio between D-peak and G-peak intensity, namely I D /I G ratio, tended to reduce up to the arc voltage of 450 V, then increased up to the arc voltage of 650 V and finally decreased again. On the other hand, when fixing the arc voltage, the I D /I G ratio tended to decrease continuously as the increasing of bias voltage. It can be concluded that the bonding structure would evolve from a graphitic-like structure to a diamond-like structure as the substrate bias increases. Additionally, the sp 3 site should be maximized at the arc voltage ∼450 V for fixed bias voltage. It is expected that, at −450 V bias and 450 V arc, sp 3 fractions could be higher than 60%. However, in some cases, e.g. at low arc voltages, voids formed between the film and the amorphous SiO 2 substrate. Electron energy loss spectroscopy (EELS) of the C edge across the DLC indicated that the thicker DLC film had uniform chemistry and structure, whereas the thin DLC film showed changes in the edge shape, indicating a gradual change in its properties between the edges and the core

  5. In vitro and in vivo genotoxicity investigations of differently sized amorphous SiO2 nanomaterials.

    Science.gov (United States)

    Maser, Elena; Schulz, Markus; Sauer, Ursula G; Wiemann, Martin; Ma-Hock, Lan; Wohlleben, Wendel; Hartwig, Andrea; Landsiedel, Robert

    2015-12-01

    In vitro and in vivo genotoxic effects of differently sized amorphous SiO2 nanomaterials were investigated. In the alkaline Comet assay (with V79 cells), non-cytotoxic concentrations of 300 and 100-300μg/mL 15nm-SiO2 and 55nm-SiO2, respectively, relevant (at least 2-fold relative to the negative control) DNA damage. In the Alkaline unwinding assay (with V79 cells), only 15nm-SiO2 significantly increased DNA strand breaks (and only at 100μg/mL), whereas neither nanomaterial (up to 300μg/mL) increased Fpg (Formamidopyrimidine DNA glycosylase)-sensitive sites reflecting oxidative DNA base modifications. In the Comet assay using rat precision-cut lung slices, 15nm-SiO2 and 55nm-SiO2 induced significant DNA damage at ≥100μg/mL. In the Alkaline unwinding assay (with A549 cells), 30nm-SiO2 and 55nm-SiO2 (with larger primary particle size (PPS)) induced significant increases in DNA strand breaks at ≥50μg/mL, whereas 9nm-SiO2 and 15nm-SiO2 (with smaller PPS) induced significant DNA damage at higher concentrations. These two amorphous SiO2 also increased Fpg-sensitive sites (significant at 100μg/mL). In vivo, within 3 days after single intratracheal instillation of 360μg, neither 15nm-SiO2 nor 55nm-SiO2 caused genotoxic effects in the rat lung or in the bone marrow. However, pulmonary inflammation was observed in both test groups with findings being more pronounced upon treatment with 15nm-SiO2 than with 55nm-SiO2. Taken together, the study shows that colloidal amorphous SiO2 with different particle sizes may induce genotoxic effects in lung cells in vitro at comparatively high concentrations. However, the same materials elicited no genotoxic effects in the rat lung even though pronounced pulmonary inflammation evolved. This may be explained by the fact that a considerably lower dose reached the target cells in vivo than in vitro. Additionally, the different time points of investigation may provide more time for DNA damage repair after instillation. Copyright © 2015 The Authors. Published by Elsevier B.V. All rights reserved.

  6. Channel mobility degradation and charge trapping in high-k/metal gate NMOSFETs

    International Nuclear Information System (INIS)

    Mathew, Shajan; Bera, L.K.; Balasubramanian, N.; Joo, M.S.; Cho, B.J.

    2004-01-01

    NMOSFETs with Metalo-Organic Chemical Vapor Deposited (MOCVD) HfAlO gate dielectric and TiN metal gate have been fabricated. Channel electron mobility was measured using the split-CV method and compared with SiO 2 devices. All high-k devices showed lower mobility compared with SiO 2 reference devices. High-k MOSFETs exhibited significant charge trapping and threshold instability. Threshold voltage recovery with time was studied on devices with oxide/nitride interfacial layer between high-k film and silicon substrate

  7. Influence of the charge trap density distribution in a gate insulator on the positive-bias stress instability of amorphous indium-gallium-zinc oxide thin-film transistors

    International Nuclear Information System (INIS)

    Kim, Eungtaek; Kim, Choong-Ki; Lee, Myung Keun; Bang, Tewook; Choi, Yang-Kyu; Choi, Kyung Cheol; Park, Sang-Hee Ko

    2016-01-01

    We investigated the positive-bias stress (PBS) instability of thin film transistors (TFTs) composed of different types of first-gate insulators, which serve as a protection layer of the active surface. Two different deposition methods, i.e., the thermal atomic layer deposition (THALD) and plasma-enhanced ALD (PEALD) of Al 2 O 3 , were applied for the deposition of the first GI. When THALD was used to deposit the GI, amorphous indium-gallium-zinc oxide (a-IGZO) TFTs showed superior stability characteristics under PBS. For example, the threshold voltage shift (ΔV th ) was 0 V even after a PBS time (t stress ) of 3000 s under a gate voltage (V G ) condition of 5 V (with an electrical field of 1.25 MV/cm). On the other hand, when the first GI was deposited by PEALD, the ΔV th value of a-IGZO TFTs was 0.82 V after undergoing an identical amount of PBS. In order to interpret the disparate ΔV th values resulting from PBS quantitatively, the average oxide charge trap density (N T ) in the GI and its spatial distribution were investigated through low-frequency noise characterizations. A higher N T resulted during in the PEALD type GI than in the THALD case. Specifically, the PEALD process on a-IGZO layer surface led to an increasing trend of N T near the GI/a-IGZO interface compared to bulk GI owing to oxygen plasma damage on the a-IGZO surface.

  8. Improved Efficiency of Flexible Organic Light-Emitting Diodes by Insertion of Ultrathin SiO2 Buffer Layers

    Directory of Open Access Journals (Sweden)

    Chien-Jung Huang

    2013-01-01

    Full Text Available An ultrathin hole-injection buffer layer (HBL using silicon dioxide (SiO2 by electron beam evaporation in flexible organic light-emitting diode (FOLED has been fabricated. While the current of the device at constant driving voltage decreases as increasing SiO2 thickness. Compared to the different thicknesses of the buffer layer, the FOLED with the buffer layer of 4 nm showed the highest luminous efficiency. The atomic force microscopy (AFM investigation of indium tin oxide (ITO/SiO2 topography reveals changes at the interface between SiO2 and N,N′-bis-(1-naphthl-diphenyl-1,1′-bipheny-4,4′-diamine (NPB, resulting in ultrathin SiO2 layers being a clear advantage for a FOLED. However, the SiO2 can be expected to be a good buffer layer material and thus enhance the emission performance of the FOLED.

  9. INVESTIGATION ON PHYSICAL AND ELECTRICAL PROPERTIES OF THE SiO2-ZnO NANOCOMPOSITE AT DIFFERENT COMPOSITION MIXINGS

    Directory of Open Access Journals (Sweden)

    Moh. Sinol

    2018-01-01

    Full Text Available Physical and electrical properties of The SiO2-ZnO mixing at different compositions were investigated. The experiment used simple mixing method at the sintering temperature 600oC. It was used the composition mixing ratio of SiO2:ZnO ie. 0:10; 7:3; 5:5; 3:7; and 10:0 (%Wt. Based on X-Ray Diffraction (XRD results, it obtained that a new phase in each sample was not formed even though having different diffraction peak. The mixing ratio of SiO2: ZnO nanocomposite (7:3 %wt had the biggest grain size (77,92 nm, the highest dielectric constant (3.00E+05 and the smallest conductivity (0,726549 (Ωm-1. On the other side, the mixing ratio of SiO2: ZnO nanocomposite (5:5 %wt had the smallest grain size (35.42nm, dielectric constant (3.00E+2 and the highest conductivity (25.36729  (Ωm-1. It can be concluded that the difference of composition ratio offered the change on both physical and electrical properties of SiO2-ZnO nanocomposite.

  10. Effect of SiO2, PVA and glycerol concentrations on chemical and mechanical properties of alginate-based films.

    Science.gov (United States)

    Yang, Manli; Shi, Jinsheng; Xia, Yanzhi

    2018-02-01

    Sodium alginate (SA)/polyvinyl alcohol (PVA)/SiO 2 nanocomposite films were prepared by in situ polymerization through solution casting and solvent evaporation. The effect of different SA/PVA ratios, SiO 2 , and glycerol content on the mechanical properties, water content, water solubility, and water vapor permeability were studied. The nanocomposite films were characterized by Fourier transform infrared, X-ray diffraction, scanning electron microscopy, transmission electron microscopy, and thermal stability (thermogravimetric analysis/differential thermogravimetry) analyses. The nanocomposites showed the highest values of mechanical properties, such as SA/PVA ratio, SiO 2 , and glycerol content was 7:3, 6wt.%, and 0.25g/g SA, respectively. The tensile strength and elongation at break (E%) of the nanocomposites increased by 525.7% and 90.7%, respectively, compared with those of the pure alginate film. The Fourier transform infrared spectra showed a new SiOC band formed in the SA/PVA/SiO 2 nanocomposite film. The scanning electron microscopy image revealed good adhesion between SiO 2 and SA/PVA matrix. After the incorporation of PVA and SiO 2 , the water resistance of the SA/PVA/SiO 2 nanocomposite film was markedly improved. Transparency decreased with increasing PVA content but was enhanced by adding SiO 2 . Copyright © 2017. Published by Elsevier B.V.

  11. Genomic and functional analysis of Vibrio phage SIO-2 reveals novel insights into ecology and evolution of marine siphoviruses.

    Science.gov (United States)

    Baudoux, A-C; Hendrix, R W; Lander, G C; Bailly, X; Podell, S; Paillard, C; Johnson, J E; Potter, C S; Carragher, B; Azam, F

    2012-08-01

    We report on a genomic and functional analysis of a novel marine siphovirus, the Vibrio phage SIO-2. This phage is lytic for related Vibrio species of great ecological interest including the broadly antagonistic bacterium Vibrio sp. SWAT3 as well as notable members of the Harveyi clade (V.harveyi ATTC BAA-1116 and V.campbellii ATCC 25920). Vibrio phage SIO-2 has a circularly permuted genome of 80598 bp, which displays unusual features. This genome is larger than that of most known siphoviruses and only 38 of the 116 predicted proteins had homologues in databases. Another divergence is manifest by the origin of core genes, most of which share robust similarities with unrelated viruses and bacteria spanning a wide range of phyla. These core genes are arranged in the same order as in most bacteriophages but they are unusually interspaced at two places with insertions of DNA comprising a high density of uncharacterized genes. The acquisition of these DNA inserts is associated with morphological variation of SIO-2 capsid, which assembles as a large (80 nm) shell with a novel T=12 symmetry. These atypical structural features confer on SIO-2 a remarkable stability to a variety of physical, chemical and environmental factors. Given this high level of functional and genomic novelty, SIO-2 emerges as a model of considerable interest in ecological and evolutionary studies. © 2012 Society for Applied Microbiology and Blackwell Publishing Ltd.

  12. Tunable Anisotropic Absorption of Ag-Embedded SiO2 Thin Films by Oblique Angle Deposition

    International Nuclear Information System (INIS)

    Xiu-Di, Xiao; Guo-Ping, Dong; Jian-Da, Shao; Zheng-Xiu, Fan; Hong-Bo, He; Hong-Ji, Qi

    2009-01-01

    Ag-embedded SiO 2 thin films are prepared by oblique angle deposition. Through field emission scanning electron microscopy (SEM), an orientated slanted columnar structure is observed. Energy-dispersive x-ray (EDX) analysis shows the Ag concentration is about 3% in the anisotropic SiO 2 matrix. Anisotropic surface plasma resonance (SPR) absorption is observed in the Ag-embedded SiO 2 thin films, which is dependent on polarization state and incidence angle of two orthogonal polarized lights and the deposition angle. This means that optical properties and anisotropic SPR absorption can be tunable in Ag-embedded SiO 2 thin films. Broadband polarization splitting is also observed and the transmission ratio T p /T s between p- and s-polarized lights is up to 2.7 for thin films deposited at α = 70°, which means that Ag-embedded SiO 2 thin films are a promising candidate for thin film polarizers. (condensed matter: structure, mechanical and thermal properties)

  13. Magnesium Removal from an Aluminum A-332 Molten Alloy Using Enriched Zeolite with Nanoparticles of SiO2

    Directory of Open Access Journals (Sweden)

    R. Muñoz-Arroyo

    2014-01-01

    Full Text Available In order to improve the Mg removal from an A-380 molten alloy, mixtures of zeolite and SiO2 nanoparticles (SiO2(NPs were tested. Zeolite was enriched with 2.5, 5, 7.5, 10, or 12.5 wt-% of amorphous SiO2(NPs. The SiO2(NPs and zeolite were mixed for 30 min in ethanol for each experiment and then dried in a furnace at 80°C for 12 h. The enriched zeolites were analyzed by scanning electron microscopy, transmission electron microscopy, and N2 gas adsorption analysis. The Mg removal was carried out injecting each mixture into the molten aluminum alloy at 750°C using argon. The Mg content of the molten alloy was measured after different periods of the injection time. Zeolites enriched with 2.5 and 5 wt-% of SiO2(NPs were demonstrated to be the better mixtures, removing Mg from an initial content of 1.6 to a final content of 0.0002 and 0.0101 wt-%, respectively, in 45 min of injection.

  14. Synthesis and Characterization of Ti-Phenyl at SiO2 Core-Shell Nanoparticles Catalyst

    International Nuclear Information System (INIS)

    Syamsi Aini; Jon Efendi; Syamsi Aini; Jon Efendi

    2012-01-01

    This study highlights the potential use of Ti-Phenyl at SiO 2 core-shell nanoparticles as heterogeneous catalysis in oxidation reaction. The Ti-Phenyl at SiO 2 was synthesized by reduction of TiCl 4 and diazonium salt with sodium borohydride to produce phenyl titanium nanoparticles (Ti-Phenyl), followed by the silica shell coating using tetraethyl orthosilicate (TEOS). The Ti-Phenyl at SiO 2 nanoparticles were characterized by Fourier transform infrared (FTIR) spectrometer, diffuse reflectance (DR) UV-visible spectrometer, thermogravimetric analyzer (TGA), X-ray diffraction (XRD) spectrometer, field emission scanning electron microscope (FESEM) and transmission electron microscope (TEM). The core-shell size of Ti-Phenyl at SiO 2 was in the range of 40 to 100 nm with its core composed with an agglomeration of Ti-Phenyl. The Ti-Phenyl at SiO 2 was active as a catalyst in the liquid phase epoxidation of 1-octene with aqueous hydrogen peroxide as an oxidant. (author)

  15. Hydroxyapatite-TiO2-SiO2-Coated 316L Stainless Steel for Biomedical Application

    Science.gov (United States)

    Sidane, Djahida; Khireddine, Hafit; Bir, Fatima; Yala, Sabeha; Montagne, Alex; Chicot, Didier

    2017-07-01

    This study investigated the effectiveness of titania (TiO2) as a reinforcing phase in the hydroxyapatite (HAP) coating and silica (SiO2) single layer as a bond coat between the TiO2-reinforced hydroxyapatite (TiO2/HAP) top layer and 316L stainless steel (316L SS) substrate on the corrosion resistance and mechanical properties of the underlying 316L SS metallic implant. Single layer of SiO2 film was first deposited on 316L SS substrate and studied separately. Water contact angle measurements, X-ray photoelectron spectroscopy, and Fourier transform infrared spectrophotometer analysis were used to evaluate the hydroxyl group reactivity at the SiO2 outer surface. The microstructural and morphological results showed that the reinforcement of HAP coating with TiO2 and SiO2 reduced the crystallite size and the roughness surface. Indeed, the deposition of 50 vol pct TiO2-reinforced hydroxyapatite layer enhanced the hardness and the elastic modulus of the HAP coating, and the introduction of SiO2 inner layer on the surface of the 316L SS allowed the improvement of the bonding strength and the corrosion resistance as confirmed by scratch studies, nanoindentation, and cyclic voltammetry tests.

  16. VO x /SiO 2 Catalyst Prepared by Grafting VOCl 3 on Silica for Oxidative Dehydrogenation of Propane

    KAUST Repository

    Zhu, Haibo

    2015-09-07

    The VOx/SiO2 catalysts for oxidative dehydrogenation of propane were synthesized by a simple grafting method. The VOCl3 was first grafted at the surface of SiO2, which was dehydrated at different temperature (from 200 to 1000°C). The formed grafted complexes were then calcined in air, leading to the formation of VOx/SiO2 catalysts. The synthesized catalysts were characterized by nitrogen adsorption, SEM, Raman spectroscopy, temperature-programmed reduction, and extended X-ray absorption fine structure analysis. The SiO2 pretreatment temperature has an evident effect on the loading and dispersion of VOx on SiO2, which finally affects their catalytic performance. High SiO2 treatment temperature is beneficial to dispersing the vanadium oxide species at the SiO2 surface. These materials are efficient catalysts for the catalytic oxidative dehydrogenation of propane to propylene. The best selectivity to propylene is achieved on the VOx/SiO2-(1000) catalyst. The high selectivity and activity are well maintained for three days catalytic reaction. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  17. In Vitro and In Vivo Short-Term Pulmonary Toxicity of Differently Sized Colloidal Amorphous SiO2

    Directory of Open Access Journals (Sweden)

    Martin Wiemann

    2018-03-01

    Full Text Available In vitro prediction of inflammatory lung effects of well-dispersed nanomaterials is challenging. Here, the in vitro effects of four colloidal amorphous SiO2 nanomaterials that differed only by their primary particle size (9, 15, 30, and 55 nm were analyzed using the rat NR8383 alveolar macrophage (AM assay. Data were compared to effects of single doses of 15 nm and 55 nm SiO2 intratracheally instilled in rat lungs. In vitro, all four elicited the release of concentration-dependent lactate dehydrogenase, β-glucuronidase, and tumor necrosis factor alpha, and the two smaller materials also released H2O2. All effects were size-dependent. Since the colloidal SiO2 remained well-dispersed in serum-free in vitro conditions, effective particle concentrations reaching the cells were estimated using different models. Evaluating the effective concentration–based in vitro effects using the Decision-making framework for the grouping and testing of nanomaterials, all four nanomaterials were assigned as “active.” This assignment and the size dependency of effects were consistent with the outcomes of intratracheal instillation studies and available short-term rat inhalation data for 15 nm SiO2. The study confirms the applicability of the NR8383 AM assay to assessing colloidal SiO2 but underlines the need to estimate and consider the effective concentration of such well-dispersed test materials.

  18. Effect of Si and SiO2 Substrates on the Geometries of As-Grown Carbon Coils

    Directory of Open Access Journals (Sweden)

    Semi Park

    2012-01-01

    Full Text Available Carbon coils could be synthesized using C2H2/H2 as source gases and SF6 as an incorporated additive gas under thermal chemical vapor deposition system. Si substrate, SiO2 thin film deposited Si substrate (SiO2 substrate, and quartz substrate were employed to elucidate the effect of substrate on the formation of carbon coils. The characteristics (formation densities, morphologies, and geometries of the deposited carbon coils on the substrate were investigated. In case of Si substrate, the microsized carbon coils were dominant on the substrate surface. While, in case of SiO2 substrate, the nanosized carbon coils were prevailing on the substrate surface. The surface morphologies of samples were investigated step by step during the reaction process. The cause for the different geometry formation of carbon coils according to the different substrates was discussed in association with the different thermal expansion coefficient values of Si and SiO2 substrates and the different etched characteristics of Si and SiO2 substrates by SF6 + H2 flow.

  19. Optical characterization of glutamate dehydrogenase monolayers chemisorbed on SiO2

    Science.gov (United States)

    Pompa, P. P.; Blasi, L.; Longo, L.; Cingolani, R.; Ciccarella, G.; Vasapollo, G.; Rinaldi, R.; Rizzello, A.; Storelli, C.; Maffia, M.

    2003-04-01

    This paper describes the formation of glutamate dehydrogenase monolayers on silicon dioxide, and their characterization by means of physical techniques, i.e., fluorescence spectroscopy and Fourier-transform infrared spectroscopy. Detailed investigations of the intrinsic stability of native proteins in solution were carried out to elucidate the occurrence of conformational changes induced by the immobilization procedure. The enzyme monolayers were deposited on SiO2 after preexposing silicon surfaces to 3-aminopropyltriethoxysilane and reacting the silylated surfaces with glutaric dialdehyde. The optical characterization demonstrates that the immobilization does not interfere with the fold pattern of the native enzyme. In addition, fluorescence spectroscopy, thermal denaturation, and quenching studies performed on the enzyme in solution well describe the folding and unfolding properties of glutamate dehydrogenase. The photophysical studies reported here are relevant for nanobioelectronics applications requiring protein immobilization on a chip.

  20. Mechanical and ageing properties of SiO2 - doped Y-TZP ceramics

    International Nuclear Information System (INIS)

    Ramesh, S.

    2001-01-01

    The effects of small additions of silica (SiO 2 ) up to 0.5 wt5 on the mechanical and ageing properties of commercial 2.5 mol% yttria-tetragonal zirconia polycrystals (Y-TZP) ceramics have been investigated. Low temperature hydrothermal ageing at 120 o C was conducted in steam in an autoclave at 2 bar up to 400 hours. It was found that the presence of a glassy grain boundary acted as a sintering aid for Y-TZP. As the silica content increased, the sinterability of the ceramic significantly improved, but this was accompanied by an undesirable microstructural change such as abnormal grain growth. This abnormality was believed to be associated with the formation of cubic phase. In addition, it was also found that the ageing resistance of Y-TZP deteriorated with increasing silica content. (Author)

  1. Hole trapping in E-beam irradiated SiO2 films

    Science.gov (United States)

    Aitken, J. M.; Dekeersmaecker, R. F.

    1990-07-01

    Low energy (25 kV) electron beam irradiation of MOS capacitors is shown to produce neutral hole traps in thin ‘radiation hardened’ SiO2 films. These traps are found in an uncharged state after irradiation and are populated by passing a small hole current, generated by avalanche breakdown of the n-type silicon substrate, through the oxide. From the time dependence of the observed trapping, a capture cross-section between 1 × 10˜-13 and 1 × 10-14 cm2 is deduced. The trap density is found to depend on the annealing conditions and incident electron beam dosage. The density of traps increases with incident electron beam exposure. Once introduced into the oxide by the radiation the traps can be removed by thermal anneals at temperatures above 500° C. Parallels between electron and hole trapping on these neutral centers are strong evidence for an amphoteric uncharged trap generated by ionizing radiation.

  2. Synthesis of optical waveguides in SiO2 by silver ion implantation

    Science.gov (United States)

    Márquez, H.; Salazar, D.; Rangel-Rojo, R.; Angel-Valenzuela, J. L.; Vázquez, G. V.; Flores-Romero, E.; Rodríguez-Fernández, L.; Oliver, A.

    2013-03-01

    Optical waveguides have been obtained by silver ion implantation on fused silica substrates. Silver ion implantation profiles were calculated in a SiO2 matrix with different energies of implantation from 125 keV to 10 MeV. Refractive index change (Δn) of the ion implanted waveguides was calculated as a function of their chemical composition. Optical absorption spectra of waveguides obtained by 9 MeV silver ion implantation, at a dose of 5 × 1016 ions/cm2, exhibit the typical absorption band associated to the surface plasmon resonance of silver nanoparticles. Effective refractive indices of the propagation modes and waveguide propagation losses of silver ion implanted waveguides are also presented.

  3. Stability and kinetics of point defects in SiO2 and in SiC

    International Nuclear Information System (INIS)

    Roma, G.

    2012-01-01

    This document is conceived as an overview of Guido Roma's research achievements on defects stability and kinetics in two materials of interest in nuclear science and for many other application domains: silicon dioxide and silicon carbide. An extended summary in french is followed by the main document, in english. Chapter 1 describes the context, introduces the approach and explains the choice of silicon dioxide and silicon carbide. Chapter 2 discusses several approximations and specific issues of the application of Density Functional Theory to point defects in non-metallic materials for the study of defects energetics and diffusion. Chapter 3 is devoted to native defects in silicon dioxide and the understanding of self-diffusion in crystalline and amorphous SiO 2 . Chapter 4 summarises the results on native defects and palladium impurities in silicon carbide. A conclusion, including suggestions for future developments, closes the main part of the document. (author) [fr

  4. Electrical properties of SiO2-based graphene under monochromatic visible light irradiation

    Science.gov (United States)

    Li, Xiangdi; Liu, Xianming; Cao, Xueying; Zhang, Peng; Lei, Xiaohua; Chen, Weimin

    2017-08-01

    The purpose of this study is to investigate the electrical properties of graphene transparent conductive film under visible light irradiation. Sample in the study is chemical vapor deposition (CVD) growth graphene on the surface of copper foils and then transferred to the SiO2 substrate. Three monochromatic visible lights with wavelength of 635nm, 520nm and 450nm representing red (R), green (G) and blue (B) lights are used as irradiation sources. Results show that the graphene resistances increase slowly under light irradiation with all the three different wavelengths, while decrease slowly after the light is switched off. Light irradiation with higher power density will induce larger relative resistance change. When graphene is irradiated at the same density, blue light irradiation may result in the largest resistance change.

  5. Emission Mechanisms of Si Nanocrystals and Defects in SiO2 Materials

    Directory of Open Access Journals (Sweden)

    José Antonio Rodríguez

    2014-01-01

    Full Text Available Motivated by the necessity to have all silicon optoelectronic circuits, researchers around the world are working with light emitting silicon materials. Such materials are silicon dielectric compounds with silicon content altered, such as silicon oxide or nitride, enriched in different ways with Silicon. Silicon Rich Oxide or silicon dioxide enriched with silicon, and silicon rich nitride are without a doubt the most promising materials to reach this goal. Even though they are subjected to countless studies, the light emission phenomenon has not been completely clarified. So, a review of different proposals presented to understand the light emission phenomenon including emissions related to nanocrystals and to point defects in SiO2 is presented.

  6. Effect of CaO/ SiO2 ratio on viscosity and structure of slag

    Directory of Open Access Journals (Sweden)

    L. Řeháčková

    2015-07-01

    Full Text Available The objective of this work is experimental determination of temperature dependences of viscosity of the molten CaO – Al2O3 - SiO2 system and assessment of impact of CaO/SiO2 ratio on viscosity and structure of this system. Experimental measurements of viscosity were performed with use of the high-temperature viscometer Anton Paar FRS 1 600. Viscosity was measured in a rotational mode during heating at the rate of 3,3 °C/min in the temperature interval from 1 673 to 1 873 K. Viscosity in the molten oxide system is determined by the internal structure. Exact clarification of the change of structure of the oxide system caused by the increased content of CaO was performed by Fourier transform infrared spectroscopy.

  7. Acidity and alkali metal adsorption on the SiO2-aqueous solution interface.

    Science.gov (United States)

    Zuyi, Tao; Hongxia, Zhang

    2002-08-01

    The intrinsic deprotonation constant (pK(a(2))(int)) and the intrinsic ion exchange constants (pK(Me(+))(int)) of Li(+), Na(+), and K(+) on SiO(2) were uniquely determined at 30 degrees C by using the potentiometric titration data, the Gouy-Chapman-Stern-Grahame (GSCG) model for the structure of the electrical double-layer (edl) and the double-extrapolation method. The values of these constants were pK(a(2))(int) = 6.57, pK(Li(+))(int) = pK(Na(+))(int) = pK(K(+))(int) = 5.61. The chemical meaning of intrinsic equilibrium constants and the equality in the values of pK(Li(+))(int), pK(Na(+))(int) and pK(K(+))(int) were discussed.

  8. Defects in electron irradiated vitreous SiO2 probed by positron annihiliation

    International Nuclear Information System (INIS)

    Uedono, Akira; Tanigawa, Shoichiro; Kawano, Takao; Itoh, Hisayoshi

    1994-01-01

    Defects in 3 MeV electron irradiated vitreous SiO 2 (v-SiO 2 ) were probed by the positron annihilation technique. For unirradiated v-SiO 2 specimens, almost all positrons were found to annihilate from positronium (Ps) states. This high formation probability of Ps was attributed to the trapping of positrons by open-space defects. The formation probability of Ps was decreased by the electron irradiation. The observed inhibition of the Ps formation was attributed to the trapping of positrons by point defects introduced and/or activated by the irradiation. From measurements of the lifetime distribution of Ps, it was found that, by the electron irradiation, the mean size of open-space defects was decreased and the size distribution of such defects was broadened. (Author)

  9. SiO2 sol-gel films after ammonia and heat two-step treatments

    International Nuclear Information System (INIS)

    Zhang Chunlai; Wang Biyi; Tian Dongbin; Yin Wei; Jiang Xiaodong; Yuan Xiaodong; Yan Lianghong; Zhang Hongliang; Zhao Songnan; Lv Haibing

    2008-01-01

    SiO 2 thin films were deposited using tetraethoxylsilane as precursor, ammonia as catalyst on K9 glass by sol-gel method. These films were post-treated by ammonia and heat. The properties of the coatings were characterized by ellipsometer, UV-vis spectrophotometry, FTIR-spectroscopy, scanning probe microscope and contact angle measurement apparatus. The resuits indicate that the thickness of the films with ammonia and heat treatment tend to decrease. Both the refractive index and water contact angle increase after ammonia treatment. However, they both decrease after heat treatment. The former increases by 0.236 for the first step, then decreases by 0.202 for the second. The latter increases to 58.92 degree, then decreases to 38.07 degree. The transmittance of the coatings turn to be better and continuously shift to short wave by UV-vis spectrophotometry. The surface becomes smoother by AFM after the two-step treatment. (authors)

  10. Ultrasonic-Assisted Synthesis of Two t-Butoxycarbonylamino Cephalosporin Intermediates on SiO2

    Directory of Open Access Journals (Sweden)

    Feng Xue

    2016-01-01

    Full Text Available Herein, we describe a facile and high efficient strategy for the synthesis of two forms of the 7β-t-butoxycarbonylamino-3-chloromethyl-3-cephem-4-carboxylates using ultrasonic irradiation. By SiO2 as weak Lewis acid catalyst, 4-methoxybenzyl 7β-t-butoxycarbonylamino-3-chloromethyl-3-cephem-carboxylate (Boc-ACLE and benzhydryl 7β-t-butoxycarbonylamino-3-chloromethyl-3-cephem-4-carboxylate (Boc-ACLH were successfully synthesized through the efficient protection of the N-t-butoxycarbonyl (N-Boc, and the reactions occurred at low temperature requiring short reaction times and exhibiting excellent isolated yields (96% and 96.2%, resp.. The advantages of this reaction route including the usage of economical reagents and mild reaction conditions and high isolated yield make the two significant t-butoxycarbonylamino cephalosporin intermediates possible in large-scale production.

  11. Roughening instability and ion-induced viscous relaxation of SiO2 surfaces

    International Nuclear Information System (INIS)

    Mayer, T.M.; Chason, E.; Howard, A.J.

    1994-01-01

    We characterize the development of nanometer scale topography (roughness) on SiO 2 surfaces as a result of low energy, off-normal ion bombardment, using in situ energy dispersive x-ray reflectivity and atomic force microscopy. Surfaces roughen during sputtering by heavy ions (Xe), with roughness increasing approximately linearly with ion fluence up to 10 17 cm -2 . A highly coherent ripple structure with wavelength of 30 nm and oriented with the wave vector parallel to the direction of incidence is observed after Xe sputtering at 1 keV. Lower frequency, random texture is also observed. Subsequent light ion (H, He) bombardment smoothens preroughened surfaces. The smoothing kinetics are first order with ion fluence and strongly dependent on ion energy in the range 0.2--1 eV. We present a linear model to account for the experimental observations which includes roughening both by random stochastic processes and by development of a periodic surface instability due to sputter yield variations with surface curvature which leads to ripple development. Smoothing occurs via ion bombardment induced viscous flow and surface diffusion. From the smoothing kinetics with H and He irradiation we measure the radiation enhanced viscosity of SiO 2 and find values on the order of 1--20x10 12 N s m -2 . The viscous relaxation per ion scales as the square root of the ion induced displacements in the film over the range of the ion penetration, suggesting short-lived defects with a bimolecular annihilation mechanism. The surface instability mechanism accounts for the ripple formation, while inclusion of stochastic roughening produces the random texture and reproduces the observed linear roughening kinetics and the magnitude of the overall roughness

  12. Photoluminescent characteristics of ion beam synthesized Ge nanoparticles in thermally grown SiO2 films

    International Nuclear Information System (INIS)

    Yu, C.F.; Chao, D.S.; Chen, Y.-F.; Liang, J.H.

    2013-01-01

    Prospects of developing into numerous silicon-based optoelectronic applications have prompted many studies on the optical properties of Ge nanoparticles within a silicon oxide (SiO 2 ) matrix. Even with such abundant studies, the fundamental mechanism underlying the Ge nanoparticle-induced photoluminescence (PL) is still an open question. In order to elucidate the mechanism, we dedicate this study to investigating the correlation between the PL properties and microstructure of the Ge nanoparticles synthesized in thermally grown SiO 2 films. Our spectral data show that the peak position, at ∼3.1 eV or 400 nm, of the PL band arising from the Ge nanoparticles was essentially unchanged under different Ge implantation fluences and the temperatures of the following annealing process, whereas the sample preparation parameters modified or even fluctuated (in the case of the annealing temperature) the peak intensity considerably. Given the microscopically observed correlation between the nanoparticle structure and the sample preparation parameters, this phenomenon is consistent with the mechanism in which the oxygen-deficiency-related defects in the Ge/SiO 2 interface act as the major luminescence centers; this mechanism also successfully explains the peak intensity fluctuation with the annealing temperature. Moreover, our FTIR data indicate the formation of GeO x upon ion implantation. Since decreasing of the oxygen-related defects by the GeO x formation is expected to be correlated with the annealing temperature, presence of the GeO x renders further experimental support to the oxygen defect mechanism. This understanding may assist the designing of the manufacturing process to optimize the Ge nanoparticle-based PL materials for different technological applications

  13. In-situ grown CNTs modified SiO2/C composites as anode with improved cycling stability and rate capability for lithium storage

    Science.gov (United States)

    Wang, Siqi; Zhao, Naiqin; Shi, Chunsheng; Liu, Enzuo; He, Chunnian; He, Fang; Ma, Liying

    2018-03-01

    Silica (SiO2) is regarded as one of the most promising anode materials for lithium ion batteries owing to its high theoretical specific capacity, relatively low operation potentials, abundance, environmental benignity and low cost. However, the low intrinsic electrical conductivity and large volume change of SiO2 during the discharge/charge cycles usually results in poor electrochemical performance. In this work, carbon nanotubes (CNTs) modified SiO2/C composites have been fabricated through an in-situ chemical vapor deposition method. The results show that the electrical conductivity of the SiO2/C/CNTs is visibly enhanced through a robust connection between the CNTs and SiO2/C particles. Compared with the pristine SiO2 and SiO2/C composites, the SiO2/C/CNTs composites display a high initial capacity of 1267.2 mA h g-1. Besides, an excellent cycling stability with the capacity of 315.7 mA h g-1 is achieved after 1000th cycles at a rate of 1 A g-1. The significantly improved electrochemical properties of the SiO2/C/CNTs composites are mainly attributed to the formation of three dimensional CNT networks in the SiO2/C substrate, which can not only shorten the Li-ion diffusion path but also relieve the volume change during the lithium-ion insertion/extraction processes.

  14. Synthis and Phisical And Chemical; Properties of SiO2 - B2O3 and SiO2 - P2O5 Thin Film Systems and Powders

    Science.gov (United States)

    Mal'chik, A. G.; Litovkin, S. V.; Seregin, V. I.; Rodionov, P. V.; Kryuchkova, S. O.

    2016-08-01

    The SiO2 - B2O3 and SiO2 - P2O5 films were synthesized by using film forming solutions having a P2O5 content of up to 30% and B2O3 up to 40%. Properties of the filmforming solutions and binary oxides were examined. The physical and chemical processes occurring in the solution during the heat treatment of films were examined. The conditions for producing films of different thicknesses were determined. The kinetic parameters were calculated.

  15. Fiber-optic thermometry using thermal radiation from Tm end doped SiO2 fiber sensor.

    Science.gov (United States)

    Morita, Kentaro; Katsumata, Toru; Komuro, Shuji; Aizawa, Hiroaki

    2014-04-01

    Fiber-optic thermometry based on temperature dependence of thermal radiation from Tm(3+) ions was studied using Tm end doped SiO2 fiber sensor. Visible light radiation peaks due to f-f transition of Tm(3+) ion were clearly observed at λ = 690 and 790 nm from Tm end doped SiO2 fibers sensor at the temperature above 600 °C. Thermal radiation peaks are assigned with f-f transition of Tm(3+) ion, (1)D2-(3)H6, and (1)G4-(3)H6. Peak intensity of thermal radiation from Tm(3+) ion increases with temperature. Intensity ratio of thermal radiation peaks at λ = 690 nm against that at λ = 790 nm, I790/690, is suitable for the temperature measurement above 750 °C. Two-dimensional temperature distribution in a flame is successfully evaluated by Tm end doped SiO2 fiber sensor.

  16. Immobilization of simulated reducing agent at the surface of SiO2 fillers in dental composite resins.

    Science.gov (United States)

    Shibata, Satoki; Hirata, Isao; Nomura, Yuji; Shirai, Kenichi; Fujitani, Morioki; Shintani, Hideaki; Okazaki, Masayuki

    2007-07-01

    To reduce the leachability of reducing agents from composite resins, immobilization of a simulated reducing agent at the surface of SiO2 fillers was examined. SiO2 plates were immersed in 2% 3-aminopropyltriethoxy silane/ethanol solution, and then immersed in dimethyl sulfoxide with 0.25 wt% 4-dimethyl amino benzoic acid (DMABA), 2.0 wt% 1-ethyl-3-(3-dimethylaminopropyl) carbodiimide hydrochloride, and 0.5 wt% N-hydroxysuccinimide. Wide-scan spectrum of X-ray photoelectron spectroscopy did not detect carbon contamination. However, narrow scan detected an O=C-N peak at 399.8 eV, suggesting that DMABA could be immobilized on silane-coupled SiO2 plates. Further, surface plasmon resonance analysis indicated the adsorption of MMA at the surface of reducing agent-immobilized plate.

  17. Site-specific Pt deposition and etching on electrically and thermally isolated SiO2 micro-disk surfaces

    International Nuclear Information System (INIS)

    Saraf, Laxmikant V

    2010-01-01

    Electrically and thermally isolated surfaces are crucial for improving the detection sensitivity of microelectronic sensors. The site-specific in situ growth of Pt nano-rods on thermally and electrically isolated SiO 2 micro-disks using wet chemical etching and a focused ion/electron dual beam (FIB-SEM) is demonstrated. Fabrication of an array of micro-cavities on top of a micro-disk is also demonstrated. The FIB source is utilized to fabricate through-holes in the micro-disks. Due to the amorphous nature of SiO 2 micro-disks, the Ga implantation possibly modifies through-hole sidewall surface chemistry rather than affecting its transport properties. Some sensor design concepts based on micro-fabrication of SiO 2 micro-disks utilizing thermally and electrically isolated surfaces are discussed from the viewpoint of applications in photonics and bio-sensing.

  18. Silver nanoparticle deposition on inverse opal SiO2 films embedded in protective polypropylene micropits for SERS applications

    Science.gov (United States)

    Ammosova, Lena; Ankudze, Bright; Philip, Anish; Jiang, Yu; Pakkanen, Tuula T.; Pakkanen, Tapani A.

    2018-01-01

    Common methods to fabricate surface enhanced Raman scattering (SERS) substrates with controlled micro-nanohierarchy are often complex and expensive. In this study, we demonstrate a simple and cost effective method to fabricate SERS substrates with complex geometries. Microworking robot structuration is used to pattern a polypropylene (PP) substrate with micropits, facilitating protective microenvironment for brittle SiO2 inverse opal (IO) structure. Hierarchical SiO2 IO patterns were obtained using polystyrene (PS) spheres as a sacrificial template, and were selectively embedded into the hydrophilized PP micropits. The same microworking robot technique was subsequently used to deposit silver nanoparticle ink into the SiO2 IO cavities. The fabricated multi-level micro-nanohierarchy surface was studied to enhance Raman scattering of the 4-aminothiophenol (4-ATP) analyte molecule. The results show that the SERS performance of the micro-nanohierarchical substrate increases significantly the Raman scattering intensity compared to substrates with structured 2D surface geometries.

  19. Synthesis of suitable SiO2 nano particles as the core in core-shell nanostructured materials.

    Science.gov (United States)

    Ghahari, Mehdi; Aghababazadeh, Roya; Ebadzadeh, Touradj; Mirhabibi, Alireza; Brydson, Rik; Fabbri, Paola; Najafi, Farhod

    2011-06-01

    The effect of surfactant on the luminescent intensity of SiO2 @Y2O3:Eu3+ particles with a core shell structure is described. Core-shell particles are used in phosphor materials and employing spherical particles with a narrow size distribution is vital for the enhancement of luminescent properties. Three kinds of different surfactants were used to synthesis SiO2 nano particles via a sol gel process. The results demonstrated that comb polycarboxylic acid surfactant had a significant influence on the morphology and particle size distribution. Somehow, particles with 100 nm size and narrow size distribution were produced. These particles had relatively uniform packing, unlike particles produced with other surfactants or without surfactant which had irregular assembly. The photoluminescence intensity of SiO2 @Y2O3:Eu3+ particles that was synthesized by comb polycarboxylic acid surfactant was higher than those which were produced without surfactant.

  20. Monodisperse and core-shell-structured SiO2@YBO3:Eu3+ spherical particles: synthesis and characterization.

    Science.gov (United States)

    Lin, Cuikun; Kong, Deyan; Liu, Xiaoming; Wang, Huan; Yu, Min; Lin, Jun

    2007-04-02

    Y0.9Eu0.1BO3 phosphor layers were deposited on monodisperse SiO2 particles of different sizes (300, 570, 900, and 1200 nm) via a sol-gel process, resulting in the formation of core-shell-structured SiO2@Y0.9Eu0.1BO3 particles. X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), photoluminescence (PL), and cathodoluminescence (CL) spectra as well as lifetimes were employed to characterize the resulting composite particles. The results of XRD, FE-SEM, and TEM indicate that the 800 degrees C annealed sample consists of crystalline YBO3 shells and amorphous SiO2 cores, in spherical shape with a narrow size distribution. Under UV (240 nm) and VUV (172 nm) light or electron beam (1-6 kV) excitation, these particles show the characteristic 5D0-7F1-4 orange-red emission lines of Eu3+ with a quantum yield ranging from 36% (one-layer Y0.9Eu0.1BO3 on SiO2) to 54% (four-layer Y0.9Eu0.1BO3 on SiO2). The luminescence properties (emission intensity and color coordinates) of Eu3+ ions in the core-shell particles can be tuned by the coating number of Y0.9Eu0.1BO3 layers and SiO2 core particle size to some extent, pointing out the great potential for these particles applied in displaying and lightening fields.

  1. Biotemplated Mesoporous TiO2/SiO2 Composite Derived from Aquatic Plant Leaves for Efficient Dye Degradation

    Directory of Open Access Journals (Sweden)

    Zhiying Yan

    2017-03-01

    Full Text Available The biotemplating technique is an environmental-protective high-efficiency new technology by which the resulting TiO2 may simultaneously attain the duplication of structure and self-doping elements from biotemplate materials, which is highly desirable for photocatalytic applications. In this paper, aquatic plant leaves—including reed, water hyacinth, and duckweed—were used as both templates and silicon precursors to successfully synthesize biomorphic TiO2/SiO2 composite with mesoporous structures. X-ray diffraction, scanning electron microscopy, transmission electron microscopy, N2 adsorption–desorption, and UV–visible diffuse reflectance spectra were applied to characterize the microstructures of the samples. The results show that all TiO2/SiO2 composites are mainly composed of an anatase phase with mesoporous structure and possess high specific surface area. Compared with commercial Degussa P25 TiO2, all TiO2/SiO2 samples display intensive light-harvesting efficiency, particularly in the visible light range. The activities were evaluated by using gentian violet as a target for photocatalytic degradation experiments under simulated solar irradiation. The TiO2/SiO2 samples templated by reed and water hyacinth leaves exhibit high activity, while the TiO2/SiO2 samples obtained from duckweed are inferior to P25 in the degradation of gentian violet. A synergistic effect of SiO2 incorporation and structural construction through biotemplating is proposed to be beneficial to photocatalytic activity.

  2. Effect of SiO2 concentration in silica sol on interface reaction during titanium alloy investment casting

    Directory of Open Access Journals (Sweden)

    Ya-meng Wei

    2018-01-01

    Full Text Available Using silica sol as a binder for titanium investment casting is very attractive due to its good stability and reasonable cost as compared with yttrium sol and zirconium sol. However, the mechanism of interface reaction in the related system remains unclear. In this investigation, the interface reaction between Y2O3-SiO2 (Y-Si shell mold and titanium alloys was studied. A group of shell molds were prepared by using Y2O3 sand and silica sol with different contents of SiO2. Ti-6Al-4V alloy was cast under vacuum by gravity casting through cold crucible induction melting (CCIM method. Scanning electron microscopy (SEM and energy dispersive x-ray spectroscopy (EDS were employed to characterize the micromorphology and composition of the reaction area, respectively. X-ray photoelectron spectroscopy (XPS was used to confirm the valence state of relevant elements. White light interferometer (WLI was used to obtain the surface topography of Y-Si shells. The results show that the thickness of reaction layers is below 3 μm when the SiO2 content of silica sol is below 20wt.%. Whereas, when the SiO2 content increases to 25wt.%, the thickness of the reaction layer increases sharply to about 15 μm. There is a good balance between chemical inertness and mechanical performance when the SiO2 content is between 15 and 20wt.%. Moreover, it was found that the distribution of SiO2 and the roughness at the surface of the shell are the key factors that determine the level of reaction.

  3. Remaining Useful Life Estimation of Insulated Gate Biploar Transistors (IGBTs Based on a Novel Volterra k-Nearest Neighbor Optimally Pruned Extreme Learning Machine (VKOPP Model Using Degradation Data

    Directory of Open Access Journals (Sweden)

    Zhen Liu

    2017-11-01

    Full Text Available The insulated gate bipolar transistor (IGBT is a kind of excellent performance switching device used widely in power electronic systems. How to estimate the remaining useful life (RUL of an IGBT to ensure the safety and reliability of the power electronics system is currently a challenging issue in the field of IGBT reliability. The aim of this paper is to develop a prognostic technique for estimating IGBTs’ RUL. There is a need for an efficient prognostic algorithm that is able to support in-situ decision-making. In this paper, a novel prediction model with a complete structure based on optimally pruned extreme learning machine (OPELM and Volterra series is proposed to track the IGBT’s degradation trace and estimate its RUL; we refer to this model as Volterra k-nearest neighbor OPELM prediction (VKOPP model. This model uses the minimum entropy rate method and Volterra series to reconstruct phase space for IGBTs’ ageing samples, and a new weight update algorithm, which can effectively reduce the influence of the outliers and noises, is utilized to establish the VKOPP network; then a combination of the k-nearest neighbor method (KNN and least squares estimation (LSE method is used to calculate the output weights of OPELM and predict the RUL of the IGBT. The prognostic results show that the proposed approach can predict the RUL of IGBT modules with small error and achieve higher prediction precision and lower time cost than some classic prediction approaches.

  4. Remaining Useful Life Estimation of Insulated Gate Biploar Transistors (IGBTs) Based on a Novel Volterra k-Nearest Neighbor Optimally Pruned Extreme Learning Machine (VKOPP) Model Using Degradation Data.

    Science.gov (United States)

    Liu, Zhen; Mei, Wenjuan; Zeng, Xianping; Yang, Chenglin; Zhou, Xiuyun

    2017-11-03

    The insulated gate bipolar transistor (IGBT) is a kind of excellent performance switching device used widely in power electronic systems. How to estimate the remaining useful life (RUL) of an IGBT to ensure the safety and reliability of the power electronics system is currently a challenging issue in the field of IGBT reliability. The aim of this paper is to develop a prognostic technique for estimating IGBTs' RUL. There is a need for an efficient prognostic algorithm that is able to support in-situ decision-making. In this paper, a novel prediction model with a complete structure based on optimally pruned extreme learning machine (OPELM) and Volterra series is proposed to track the IGBT's degradation trace and estimate its RUL; we refer to this model as Volterra k-nearest neighbor OPELM prediction (VKOPP) model. This model uses the minimum entropy rate method and Volterra series to reconstruct phase space for IGBTs' ageing samples, and a new weight update algorithm, which can effectively reduce the influence of the outliers and noises, is utilized to establish the VKOPP network; then a combination of the k -nearest neighbor method (KNN) and least squares estimation (LSE) method is used to calculate the output weights of OPELM and predict the RUL of the IGBT. The prognostic results show that the proposed approach can predict the RUL of IGBT modules with small error and achieve higher prediction precision and lower time cost than some classic prediction approaches.

  5. Photo-induced tunneling currents in MOS structures with various HfO2/SiO2 stacking dielectrics

    OpenAIRE

    Chin-Sheng Pang; Jenn-Gwo Hwu

    2014-01-01

    In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO2/Si (S), Al/HfO2/SiO2/Si (H), and Al/3HfO2/SiO2/Si (3H) were examined. The significant observation of electron traps of sample H compares to sample S is found under the double bias capacitance-voltage (C-V) measurements in illumination. Moreover, the photo absorption sensitivity of sample H is higher than S due to the formation of HfO2 dielectric layer,...

  6. Facile Synthesis and Growth Mechanism of SiO2 Nanotubes with ZnS Nanowires as Intermediates.

    Science.gov (United States)

    Chuo, Hui Xin; Wu, Li Li

    2016-04-01

    SiO2 nanotubes with good chemical purity and well defined morphology were synthesized successfully in a one-step gas phase condensation process using gold catalyst. The as-synthesized products were characterized by transmission electron microscopy and nanoprobe X-ray energy dispersive. In the observations, a growth mechanism of the nanotubes is suggested. The new synthetic route to prepare SiO2 nanotubes is favorable to satisfy the special needs in commercial and industrial application and can be easily applied to other semiconductor materials.

  7. Liquidus Temperature of SrO-Al2O3-SiO2 Glass-Forming Compositions

    DEFF Research Database (Denmark)

    Abel, Brett M.; Morgan, James M.; Mauro, John C.

    2013-01-01

    Despite the important role of strontium aluminosilicate glasses in various technologies, there is no available phase diagram for this ternary system in the ACerS-NIST Phase Equilibria Diagrams Database. Establishing the liquidus surface (liquidus temperature Tliq and primary devitrification phase...... with the phase diagrams for CaO-Al2O3-SiO2 and MgO-Al2O3-SiO2 systems, we have found that for the highest [RO]/[Al2O3] ratios, Tliq exhibits a minimum value for R = Ca. Based on the phase diagram established here, the composition of glass materials, for example, for liquid crystal display substrates, belonging...

  8. SiO2/TiO2 multi-layered thin films with self-cleaning and enhanced ...

    Indian Academy of Sciences (India)

    using a TEOS:EtOH:HCl:H2O in 1:8:3:0.5 volume ratio. The as-prepared SiO2 gel was then calcinated at 600 ... 0.25 g SiO2 powder in 50 ml ethanol:water (1:1 v/v), respec- tively, 0.05 g TiO2 powder in 50 ml ethanol. ... cleaned by ultra-sonication in alcohol and then dried using compressed air. The multi-layered thin films ...

  9. Gallium arsenide (GaAs) island growth under SiO(2) nanodisks patterned on GaAs substrates.

    Science.gov (United States)

    Tjahjana, Liliana; Wang, Benzhong; Tanoto, Hendrix; Chua, Soo-Jin; Yoon, Soon Fatt

    2010-05-14

    We report a growth phenomenon where uniform gallium arsenide (GaAs) islands were found to grow underneath an ordered array of SiO(2) nanodisks on a GaAs(100) substrate. Each island eventually grows into a pyramidal shape resulting in the toppling of the supported SiO(2) nanodisk. This phenomenon occurred consistently for each nanodisk across a large patterned area of approximately 50 x 50 microm(2) (with nanodisks of 210 nm diameter and 280 nm spacing). The growth mechanism is attributed to a combination of 'catalytic' growth and facet formation.

  10. Facile preparation of polyethylenimine-tannins coated SiO2 hybrid materials for Cu2+ removal

    Science.gov (United States)

    Huang, Qiang; Liu, Meiying; Zhao, Jiao; Chen, Junyu; Zeng, Guangjian; Huang, Hongye; Tian, Jianwen; Wen, Yuanqing; Zhang, Xiaoyong; Wei, Yen

    2018-01-01

    Polyethylenimine-tannins coated SiO2 (SiO2@PEI-TA) hybrid materials have been prepared via a single-step multifunctional coating with polyethylenimine (PEI) and tannins (TA), and characterized by transmission electron microscope (TEM), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA), and X-ray photoelectron spectroscopy (XPS). The as-prepared SiO2@PEI-TA composites were examined as adsorbents to remove the Cu2+ from aqueous solution. The effects of contact time, initial Cu2+ concentration, solution pH and temperature, on Cu2+ adsorption have been investigated. The results show that the adsorption of Cu2+ onto SiO2@PEI-TA is dependent on the contact time, Cu2+ concentration, pH and temperature. The SiO2@PEI-TA composites show a 2.4-fold increase in adsorption capacity, implying that the introduction of PEI-TA coating is in favor of the Cu2+ adsorption. Based on the analysis of kinetic data, the kinetics of Cu2+ adsorption is more accurately described by the pseudo-second-order model. The equilibrium data are analyzed by Langmuir and Freundlich isotherms. Results of isotherms show that the better agreement is Freundlich isotherm model with correlation coefficient of 0.9914, which suggests that the adsorption of Cu2+ onto SiO2@PEI-TA is mainly a heterogeneous adsorption process. Thermodynamic analyses show that the adsorption interaction is actually a spontaneous and endothermic chemical process, which might involve the chemical chelation between Cu2+ and functional groups (amine and carboxyl groups) on the surface of SiO2@PEI-TA. In addition, the Cu2+ ions could desorb from SiO2@PEI-TA by using acid solution and the adsorption efficiency remains at high level after five adsorption-desorption recycles. These results provide potential applications of these novel adsorbents for the removal of heavy metal Cu2+ from aqueous solution and also provide strong evidence to support the adsorption mechanism proposed in the study.

  11. THE THERMODYNAMIC PROPERTIES OF MELTS OF DOUBLE SYSTEM MgO – Al2O3, MgO – SiO2, MgO – CaF2, Al2O3 – SiO2, Al2O3 – CaF2, SiO2 – CaF2

    Directory of Open Access Journals (Sweden)

    В. Судавцова

    2012-04-01

    Full Text Available Methodology of prognostication of thermodynamics properties of melts is presented from the coordinatesof liquidus of diagram of the state in area of equilibria a hard component is solution, on which energies ofmixing of Gibbs are expected in the double border systems of MgO – Al2O3, MgO – SiO2, MgO – CaF2,Al2O3 – SiO2, Al2O3 - CaF2, SiO2 - CaF2. For the areas of equilibrium there is quasibinary connection(MgAl2O4, Mg2SiO4, Al6Si2O13 – a grout at calculations was used equalization of Hauffe-Wagner. Theobtained data comport with literary

  12. Fully patterned p-channel SnO TFTs using transparent Al2O3 gate insulator and ITO as source and drain contacts

    Science.gov (United States)

    Guzmán-Caballero, D. E.; Quevedo-López, M. A.; De la Cruz, W.; Ramírez-Bon, R.

    2018-03-01

    SnO p-type was used as active layer to fabricate thin film transistors (TFTs) through photolithography and dry etching processes. The SnO p-type thin films (25 nm) were deposited by DC reactive sputtering with variable oxygen (O2) flow rate to then be annealed in air at 250 ◦C. Al2O3 gate dielectric (15 nm) was deposited by atomic layer deposition. Hall measurements showed p-type carrier concentration (N h ) of around 1 × 1018 cm‑3 and Hall mobilities (μ Hall) between 0.35 and 2.64 cm2 V‑1 s‑1, depending on the O2 flow rate during deposition. The hole transport was dominated by variable-range hopping conduction. A change in the preferred crystalline orientation in the SnO films from (101) to (110) was associated with the increase in μ Hall. In addition, Raman vibrational modes at 110 and 209 cm‑1 of polycrystalline SnO films showed certain dependence with the grain orientation. The SnO-based TFTs showed p-type behavior with low threshold voltages (V T ) and low sub threshold swing (SS) in the range from 1.76 to 3.50 V and 1.63 to 3.24 V/dec., respectively. The TFTs mobilities in the saturation regime (μ sat) were in the range of 0.12 and 1.32 cm2 V‑1 s‑1. The current on/off ratio (I ON/I OFF) was in the order of 102, approximately. The large values of the interface trap density (D IT) contributed to the high I OFF and the low I ON/I OFF of the TFTs.

  13. Luminescent properties and characterization of Gd2O3:Eu3+@SiO2 and Gd2Ti2O7:Eu3+@SiO2 core shell phosphors prepared by a sol gel process

    Science.gov (United States)

    Lin, Kuo-Min; Lin, Chih-Cheng; Li, Yuan-Yao

    2006-03-01

    Gd2O3:Eu3+ and Gd2Ti2O7:Eu3+ films 10 nm in thickness were individually coated onto silica spheres (particle size of 150-170 nm) using the sol-gel method. The synthesized materials were addressed as Gd2O3:Eu3+@SiO2 and Gd2Ti2O7:Eu3+@SiO2 phosphors. An x-ray powder diffractometer (XRD), field emission scanning electron microscope (FE-SEM), high-resolution transmission electron microscope (HR-TEM), and photoluminescence spectrophotometer (PL) were employed to characterize the core-shell phosphors. Uniform core-shell phosphor particles were observed using FE-SEM. The XRD and HR-TEM results indicated that the coated-shell layer was well crystallized after sintering at 1000 °C. The Gd2O3:Eu3+@SiO2 PL measurement showed a red emission at the main 615 nm wavelength. The Gd2Ti2O7:Eu3+@SiO2 phosphor showed an orange-red emission at the 588 and 615 nm wavelengths. In comparison with the Gd2O3:Eu3+ and Gd2Ti2O7:Eu3+ bulk material results, the core-shell phosphors maintained the same emission ability as the bulk materials and the novel core-shell phosphors possessed great potential in quantum phosphor applications.

  14. Luminescent properties and characterization of Gd2O3:Eu(3+)@SiO2 and Gd2Ti2O7:Eu(3+)@SiO2 core-shell phosphors prepared by a sol-gel process.

    Science.gov (United States)

    Lin, Kuo-Min; Lin, Chih-Cheng; Li, Yuan-Yao

    2006-03-28

    Gd2O3:Eu(3+) and Gd2Ti2O7:Eu(3+) films 10 nm in thickness were individually coated onto silica spheres (particle size of 150-170 nm) using the sol-gel method. The synthesized materials were addressed as Gd2O3:Eu(3+)@SiO2 and Gd2Ti2O7:Eu(3+)@SiO2 phosphors. An x-ray powder diffractometer (XRD), field emission scanning electron microscope (FE-SEM), high-resolution transmission electron microscope (HR-TEM), and photoluminescence spectrophotometer (PL) were employed to characterize the core-shell phosphors. Uniform core-shell phosphor particles were observed using FE-SEM. The XRD and HR-TEM results indicated that the coated-shell layer was well crystallized after sintering at 1000 °C. The Gd2O3:Eu(3+)@SiO2 PL measurement showed a red emission at the main 615 nm wavelength. The Gd2Ti2O7:Eu(3+)@SiO2 phosphor showed an orange-red emission at the 588 and 615 nm wavelengths. In comparison with the Gd2O3:Eu(3+) and Gd2Ti2O7:Eu(3+) bulk material results, the core-shell phosphors maintained the same emission ability as the bulk materials and the novel core-shell phosphors possessed great potential in quantum phosphor applications.

  15. PENGUJIAN AKTIVITAS KOMPOSIT Fe2O3-SiO2 SEBAGAI FOTOKATALIS PADA FOTODEGRADASI 4-KLOROFENOL (The Activity Test of Fe2O3-SiO2 Composite As Photocatalyst on 4-Chlorophenol Photodegradation

    Directory of Open Access Journals (Sweden)

    Eko Sri Kunarti

    2009-03-01

    Full Text Available ABSTRAK  Pada penelitian ini telah dilakukan pengujian aktivitas komposit Fe2O3-SiO2 sebagai fotokatalis pada fotodegradasi 4-klorofenol. Penelitian diawali dengan preparasi dan karakterisasi fotokatalis Fe2O3-SiO2. Preparasi dilakukan dengan metode sol-gel pada temperatur kamar menggunakan tetraetil ortosilikat (TEOS dan besi (III nitrat sebagai prekursor diikuti dengan perlakuan termal pada temperature 500 oC. Karakterisasi dilakukan dengan metode spektrometri inframerah, difraksi sinar-X dan spektrometri fluoresensi sinar-X. Uji aktivitas komposit untuk fotodegradasi 4-klorofenol dilakukan dalam reaktor tertutup yang dilengkapi dengan lampu UV. Pada uji ini telah dipelajari pengaruh waktu penyinaran dan pH larutan terhadap efektivitas fotodegradasi 4-klorofenol. Hasil penelitian menunjukkan bahwa komposit Fe2O3-SiO2 dapat dipreparasi dengan metode sol-gel pada temperatur kamar diikuti perlakuan termal. Komposit Fe2O3-SiO2 dapat meningkatkan efektivitas fotodegradasi 4-klorofenol dari 11,86 % menjadi 55,38 %. Efektivitas fotodegradasi 4- klorofenol dipengaruhi waktu penyinaran dan pH larutan yang semakin lama waktu penyinaran efektifitas fotodegradasi semakin tinggi, namun waktu penyinaran yang lebih lama dari 4 jam dapat menurunkan efektivitasnya. pH larutan memberikan pengaruh yang berbeda-beda pada efektivitas fotodegradasi 4-klorofenol.   ABSTRACT The activity test of Fe2O3-SiO2 composite as photocatalyst on 4-chlorophenol photodegradation has been studied. The research was initiated by preparation of Fe2O3-SiO2 photocatalyst and followed by characterization. The preparation was conducted by sol-gel method at room temperature using tetraethylorthosilicate (TEOS and iron (III nitrate as precursors followed by thermal treatment at a temperature of 500oC. The characterizations were performed by X-ray Diffraction (XRD, Infrared and X-ray Fluorescence Spectrophotometry. The photocatalytic activity test of composites for 4 chlorophenol degradation was carried out in a closed reactor equipped with UV light. In this test, the influences of irradiation time and 4-chlorophenol pH were studied.  Results showed that the composite could be prepared through sol-gel method. The Fe2O3-SiO2 composite could increase activity of 4-chlorophenol photodegradation from 11.86 % to 55.38 %. The photodegradation effectiveness was influenced by irradiating time and pH of solution. The pH of solution gave different 4-chlorophenol photodegradation effectiveness.

  16. Nanocristales de silicio en matriz de SiO2 para aplicaciones fotónicas

    Directory of Open Access Journals (Sweden)

    Morante, J. R.

    2004-04-01

    Full Text Available We describe in this work the development of both materials and technology approaches that have allowed us to successfully produce efficient and reliable LEDs by using only CMOS processes. Si nanocrystals (Si-nc were synthesised in SiO2 by ion implantation plus annealing and display average diameters from 2.5 to 6 nm. Wide photoluminescence around 700-800 (red nm is present in all the samples. The most efficient structures have Si-ncs with average size of 3 nm and densities of 1019 cm-3. We have estimated band-gap energies, lifetimes (20-200 μs and absorption cross-sections (10-15-10-16 cm2 as a function of size and surface passivation. From highly luminescent Si-nc, LEDs consisting of MOS capacitors were fabricated. Stable red electroluminescence has been obtained at room temperature and the I-V characteristics prove that the current is related to a pure tunnelling process.En este trabajo describimos la tecnología y los materiales empleados en la fabricación de nanocristales de silicio (Si-nc para obtener dispositivos luminiscentes usando procesos compatibles con la tecnología CMOS. Los nanocristales de Silicio se sintetizaron a partir de una implantación iónica sobre SiO2 y un posterior recocido, consiguiendo una distribución de tamaños que varia desde 2.5 a 6 nm dependiendo de la dosis de implantación. Todas las muestras presentan una fotoluminiscencia ancha alrededor de 700-800 nm (rojo, que se desplaza fuertemente con el tamaño medio de los nanocristales. Las estructuras más eficientes presentan una tamaño promedio de 3 nm, con una densidad de 1019 cm-3. En cuanto a fotoluminiscencia, se ha hecho una estimación de las energías del gap, de las vidas medias (20-200 μs y las secciones eficaces de absorción (10-15-10-16 cm2 en función del tamaño y de la pasivación de la superficie de los nanocristales. En estructuras tipo MOS con Si-nc se obtuvo electroluminiscencia muy fuerte y estable a temperatura ambiente. Las curvas I-V muestran que la corriente es debida puramente a un mecanismo de efecto túnel.

  17. Physical properties of emulsion systems with SiO2 nanoparticles

    Directory of Open Access Journals (Sweden)

    Sergeev Vitaly Vyacheslavovich

    2017-11-01

    Full Text Available One of the most relevant directions for research and development (R&D in the area of oil and gas fields development is to study physicochemical impact onto petroleum reservoir to enhance development rate and increase oil recovery factor. Wide range of fields where nanoscale particles can be applied within this direction shifted the level of physicochemical processes studies from microscale to nanoscale, that caused significant advancement of the oil and gas industry as a whole. As for physicochemical methods for petroleum reservoir stimulation, the rapid development of nanotechnologies considerably improves understanding of the processes that run at the boundaries of phases liquid-liquid, liquid-gas, liquid-rock phases, etc. The most studied processes are the processes of influence of nanoscale particles on the interface between liquid-gas and liquid-liquid phases [1–18]. At the moment it is known that nanoparticles of various minerals and metals can increase lifetime of gas bubbles in hydrocarbon media and the stability of globules in hydrocarbon or aqueous phase in various types of emulsions [1–7, 12]. But in the industry there is no single understanding and explanation of physicochemical processes occurring at the boundaries of phases in the presence of nanoparticles under reservoir conditions or even in bench tests on rock cores. In this connection, the direction of nanoscale particles application in the oil and gas fields development is promising for carrying out complex R&D in order to reveal new scientific information and introduce high-performance inventions into the industry. The article presents the results of the next stage in complex research of silicon dioxide nanoparticles (SiO2 impact onto rheological and stability properties of emulsion systems. The complex research is performed within the framework of international project «Development and implementation of water-blocking agents based on application of SiO2 nanoparticles». The results of comparative research of new emulsion systems showed the dependences between shear stress and shear rate gradient (flow curve, dynamic viscosity and the shear rate (viscosity curve, and dynamic viscosity and volume of aqueous calcium chloride addition.

  18. Study of strained-Si p-channel MOSFETs with HfO2 gate dielectric

    Science.gov (United States)

    Pradhan, Diana; Das, Sanghamitra; Dash, Tara Prasanna

    2016-10-01

    In this work, the transconductance of strained-Si p-MOSFETs with high-K dielectric (HfO2) as gate oxide, has been presented through simulation using the TCAD tool Silvaco-ATLAS. The results have been compared with a SiO2/strained-Si p-MOSFET device. Peak transconductance enhancement factors of 2.97 and 2.73 has been obtained for strained-Si p-MOSFETs in comparison to bulk Si channel p-MOSFETs with SiO2 and high-K dielectric respectively. This behavior is in good agreement with the reported experimental results. The transconductance of the strained-Si device at low temperatures has also been simulated. As expected, the mobility and hence the transconductance increases at lower temperatures due to reduced phonon scattering. However, the enhancements with high-K gate dielectric is less as compared to that with SiO2.

  19. Enhanced Visible Transmittance of Thermochromic VO2 Thin Films by SiO2 Passivation Layer and Their Optical Characterization

    Directory of Open Access Journals (Sweden)

    Jung-Hoon Yu

    2016-07-01

    Full Text Available This paper presents the preparation of high-quality vanadium dioxide (VO2 thermochromic thin films with enhanced visible transmittance (Tvis via radio frequency (RF sputtering and plasma enhanced chemical vapor deposition (PECVD. VO2 thin films with high Tvis and excellent optical switching efficiency (Eos were successfully prepared by employing SiO2 as a passivation layer. After SiO2 deposition, the roughness of the films was decreased 2-fold and a denser structure was formed. These morphological changes corresponded to the results of optical characterization including the haze, reflectance and absorption spectra. In spite of SiO2 coating, the phase transition temperature (Tc of the prepared films was not affected. Compared with pristine VO2, the total layer thickness after SiO2 coating was 160 nm, which is an increase of 80 nm. Despite the thickness change, the VO2 thin films showed a higher Tvis value (λ 650 nm, 58% compared with the pristine samples (λ 650 nm, 43%. This enhancement of Tvis while maintaining high Eos is meaningful for VO2-based smart window applications.

  20. Research of high-hardness and wear-resistant SiO2 film coating on acrylic substrates

    Science.gov (United States)

    Yao, Yu-ting; Cheng, Yan; Deng, Xiu-mei; Jiang, Jin-hu; Zhu, Xiao-bo; Gu, Wen-hua

    2017-10-01

    Acrylic (PMMA) possesses excellent optical transparency, good chemical stability as well as many other merits such as the feasibilities in dyeing and manufacturing. But its poor hardness and wear resistance restrict its industrialized applications. In order to improve the hardness and wear resistance, SiO2 films were coated on PMMA substrates by both dip coating method and aerosol spraying method in this work. Heating curing method was carried out after the coating of SiO2 film, and consequently, the mechanical properties, optical properties and surface morphology were characterized and compared. The experimental results showed that the SiO2 films prepared by aerosol spraying method has a better performance in both hardness and wear resistance, compared with the films prepared by dip coating method. In the optimized conditions, the hardness of the PMMA was improved from 3H to 8H, and the non-abrasion rubbing times increased from less than 100 times to 5000 times with a loading of 500g weight after the coating of SiO2 film, indicating the improvement of the wear resistance.

  1. Effects of SiO2 and TiO2 fillers on thermal and dielectric properties ...

    Indian Academy of Sciences (India)

    Administrator

    . In consideration of the desired properties of ... dielectric properties for its construction such as white back (rear glass dielectric layer), barrier rib ..... bution of residual SiO2 and TiO2 fillers in the glass matrix. The sintering of glass frits at such a ...

  2. In situ coating of flame-made TiO2 particles with nanothin SiO2 films.

    Science.gov (United States)

    Teleki, Alexandra; Heine, Martin C; Krumeich, Frank; Akhtar, M Kamal; Pratsinis, Sotiris E

    2008-11-04

    Rutile TiO2 particles made by flame spray pyrolysis (FSP) were coated in a single step with SiO2 layers in an enclosed flame reactor. This in situ particle coating was accomplished by a hollow ring delivering hexamethyldisiloxane (HMDSO) vapor (precursor to SiO2) through multiple jets in swirl cross-flow to Al-doped nanostructured rutile TiO2 aerosol freshly made by FSP of a solution of titanium tetraisopropoxide and aluminum sec-butoxide in xylene. The as-prepared powders were characterized by (scanning) transmission electron microscopy (STEM and TEM), energy dispersive X-ray analysis, X-ray diffraction, nitrogen adsorption, electrophoretic mobility, DC plasma optical emission (DCP-OES), and Fourier transform infrared (FT-IR) spectroscopy. The coating quality was assessed further by the photocatalytic oxidation of isopropyl alcohol to acetone. The effect of HMDSO injection point and vapor concentration on product particle morphology was investigated. The titania particles were uniformly SiO2-coated with controlled and uniform thickness at a production rate of about 30 g h(-1) and exhibited limited, if any, photoactivity. In contrast, spraying and combusting equivalent mixtures of the above Si/Al/Ti precursors in the above reactor (without delivering HMDSO through the hollow ring) resulted in particles segregated in amorphous (SiO2) and crystalline (TiO2) domains which exhibited high photocatalytic activity.

  3. SiO $ _2 $/TiO $ _2 $ multi-layered thin films with self-cleaning and ...

    Indian Academy of Sciences (India)

    Self-cleaning, high transmittance glazing was obtained by cold spray deposition for glazings. The thin films contain TiO 2 , SiO 2 and Au nanoparticles in different structures which allow for tailoring the optical, hydrophilic and photocatalytic properties. The crystallinity, morphology and surface energy were correlated with the ...

  4. Deposition of conductive TiN shells on SiO2 nanoparticles with a fluidized bed ALD reactor

    NARCIS (Netherlands)

    Didden, A.; Hillebrand, P.; Wollgarten, M.; Dam, B.; Van de Krol, R.

    2016-01-01

    Conductive TiN shells have been deposited on SiO2 nanoparticles (10–20 nm primary particle size) with fluidized bed atomic layer deposition using TDMAT and NH3 as precursors. Analysis of the powders confirms that shell growth saturates at approximately 0.4 nm/cycle at TDMAT doses of >1.2 mmol/g of

  5. High thermal stability of abrupt SiO2/GaN interface with low interface state density

    Science.gov (United States)

    Truyen, Nguyen Xuan; Taoka, Noriyuki; Ohta, Akio; Makihara, Katsunori; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Shimizu, Mitsuaki; Miyazaki, Seiichi

    2018-04-01

    The effects of postdeposition annealing (PDA) on the interface properties of a SiO2/GaN structure formed by remote oxygen plasma-enhanced chemical vapor deposition (RP-CVD) were systematically investigated. X-ray photoelectron spectroscopy clarified that PDA in the temperature range from 600 to 800 °C has almost no effects on the chemical bonding features at the SiO2/GaN interface, and that positive charges exist at the interface, the density of which can be reduced by PDA at 800 °C. The capacitance-voltage (C-V) and current density-SiO2 electric field characteristics of the GaN MOS capacitors also confirmed the reduction in interface state density (D it) and the improvement in the breakdown property of the SiO2 film after PDA at 800 °C. Consequently, a high thermal stability of the SiO2/GaN structure with a low fixed charge density and a low D it formed by RP-CVD was demonstrated. This is quite informative for realizing highly robust GaN power devices.

  6. Flexible SiO2 cantilevers for torsional self-aligning micro scale four-point probes

    DEFF Research Database (Denmark)

    Kjær, Daniel; Gammelgaard, Lauge; Bøggild, Peter

    2007-01-01

    In order to successfully measure the conductivity of a sample with a four- point probe, good alignment of the electrodes to the sample is important to establish even contact pressure and contact areas of the electrodes. By incorporating a hinge in a microfabricated SiO2 mono- cantilever the ability...

  7. Modification of Nafion membrane with biofunctional SiO2 nanofiber for proton exchange membrane fuel cells

    Science.gov (United States)

    Wang, Hang; Li, Xiaojie; Zhuang, Xupin; Cheng, Bowen; Wang, Wei; Kang, Weimin; Shi, Lei; Li, Hongjun

    2017-02-01

    Proton currents are an integral part of the most important energy-converting structures in biology. We prepared a new type of bioinspired Nafion (Bio-Nafion) membrane composited of biofunctional SiO2 (Bio-SiO2) nanofiber and Nafion matrix. SiO2 nanofibers were prepared by electrospinning silica sol prepared from tetraethyl orthosilicate. Meanwhile, Bio-SiO2 nanofibers were synthesized by immobilizing amino acids (cysteine, serine, lysine, and glycine) on SiO2 nanofibers, which acted as efficient proton-conducting pathways that involved numerous H+ transport sites. In our study, the SiO2 nanofibers biofunctionalized with cysteine were further oxidized, and the composite membranes were designated as Nafion-Cys, Nafion-Lys, Nafion-Ser, and Nafion-Gly, respectively. We then investigated the different polar groups (sbnd SO3H, sbnd OH, and sbnd NH2) of the amino acids that contributed to membrane properties of thermal stability, water uptake (WU), dimensional stability, proton conductivity, and methanol permeability. Nafion-Cys exhibited the highest proton conductivity of 0.2424 S/cm (80 °C). Nafion-Gly showed the lowest proton conductivity and WU because glycine contains the least number of hydrophilic groups among the amino acids. Overall, the introduction of Bio-SiO2 nanofiber to composite membranes significantly improved proton conductivity, dimensional stability, and methanol permeability.

  8. Wear and friction performance of PTFE filled epoxy composites with a high concentration of SiO2 particles

    NARCIS (Netherlands)

    Shen, J.T.; Top, M.; Pei, Y.T.; de Hosson, Jeff

    2015-01-01

    In this work, the tribological performance of PTFE filled SiO2 particles–epoxy composites is investigated. Under a load of 60 N (~140 MPa contact pressure), the optimum content of PTFE lies between 10 and 15 wt%, which yields an ultralow coefficient of friction (CoF) in conjunction with a low wear

  9. Influence of SiO2 Addition on Properties of PTFE/TiO2 Microwave Composites

    Science.gov (United States)

    Yuan, Ying; Wang, Jie; Yao, Minghao; Tang, Bin; Li, Enzhu; Zhang, Shuren

    2018-01-01

    Composite substrates for microwave circuit applications have been fabricated by filling polytetrafluoroethylene (PTFE) polymer matrix with ceramic powder consisting of rutile TiO2 ( D 50 ≈ 5 μm) partially substituted with fused amorphous SiO2 ( D 50 ≈ 8 μm) with composition x vol.% SiO2 + (50 - x) vol.% TiO2 ( x = 0, 3, 6, 9, 12), and the effects of SiO2 addition on characteristics such as the density, moisture absorption, microwave dielectric properties, and thermal properties systematically investigated. The results show that the filler was well distributed throughout the matrix. High dielectric constant ( ɛ r > 7.19) and extremely low moisture absorption (PTFE polymer, retarding its decomposition. The temperature coefficient of dielectric constant ( τ ɛ ) of the composites shifted toward the positive direction (from - 309 ppm/°C to - 179 ppm/°C) as the SiO2 content was increased, while the coefficient of thermal expansion remained almost unchanged (˜ 35 ppm/°C).

  10. Electromagnetic property of SiO2-coated carbonyl iron/polyimide composites as heat resistant microwave absorbing materials

    Science.gov (United States)

    Wang, Hongyu; Zhu, Dongmei; Zhou, Wancheng; Luo, Fa

    2015-02-01

    Heat resistant microwave absorbing materials were prepared by compression molding method, using polyimide resin as matrix and SiO2 coated carbonyl iron (CI) as filler. The SiO2 coated CI particles were prepared by Stober process. The microwave absorbing properties and the effect of heat treatment on the electromagnetic properties of SiO2 coated CI/polyimide composites were investigated. When the content of SiO2 coated CI is 60 wt%, the value of minimum reflection loss decreases from -25 dB to -33 dB with the thickness increases from 1.5 mm to 2.1 mm. According to the thermal-gravimetric analyses (TGA) curves, the polyimide matrix can be used at 300 °C for long time. The complex permittivity of the composites slightly increases while the complex permeability almost keeps constant after heat treatment at 300 °C for 10 h, which indicating that the composites can be used at elevated temperature as microwave absorbing materials at the same time have good heat resistance and microwave absorption.

  11. FTIR and Raman spectroscopy of carbon nanoparticles in SiO2, ZnO and NiO matrices

    CSIR Research Space (South Africa)

    Katumba, G

    2008-11-01

    Full Text Available Coatings of carbon nanoparticles dispersed in SiO2, ZnO and NiO matrices on aluminium substrates have been fabricated by a sol–gel technique. Spectrophotometry was used to determine the solar absorptance and the thermal emittance of the composite...

  12. Matrix solid-phase dispersion extraction of organophosphorus pesticide using SiO2-poly(N-vinylimidazole)

    International Nuclear Information System (INIS)

    Gutiérrez-Solís, M C; Muñoz-Rodríguez, D; Carrera-Figueiras, C; Ávila-Ortega, A; Medina-Peralta, S

    2013-01-01

    A sorbent material based on silica particles modified with poly(N-vinylimidazole) (SiO 2 -PVI) has been evaluated for the treatment of samples by matrix solid-phase dispersion (MSPD). The extraction of four organophosphorus pesticides was done from a spiked tomato and the extracts were analyzed by gas chromatography coupled to mass spectrometry. Six elution solvents were evaluated and acetone was selected due to better recovery of the four pesticides and low background signal in the chromatograms. A factorial design 2 4 was used for selection of extraction conditions. The factors were contact time, acetone volume, treatment (with or without freeze-drying) and adsorbent (SiO 2 or SiO 2 -PVI). The best recoveries were obtained using 15 minutes of contact, 2 mL of solvent and sorbent without freeze-drying. The recoveries were between 60 and 83% for SiO 2 -PVI in spiked tomato with 0.2 and 0.8μg/g.

  13. Measurement of the Indentation Modulus and the Local Internal Friction in Amorphous SiO2 Using Atomic Force Acoustic Microscopy

    Directory of Open Access Journals (Sweden)

    Zhang B.

    2016-03-01

    Full Text Available For the past two decades, atomic force acoustic microscopy (AFAM, an advanced scanning probe microscopy technique, has played a promising role in materials characterization with a good lateral resolution at micro/nano dimensions. AFAM is based on inducing out-of-plane vibrations in the specimen, which are generated by an ultrasonic transducer. The vibrations are sensed by the AFM cantilever when its tip is in contact with the material under test. From the cantilver’s contactresonance spectra, one determines the real and the imaginary part of the contact stiffness k*, and then from these two quantities the local indentation modulus M' and the local damping factor Qloc-1 can be obtained with a spatial resolution of less than 10 nm. Here, we present measured data of M' and of Qloc-1 for the insulating amorphous material, a-SiO2. The amorphous SiO2 layer was prepared on a crystalline Si wafer by means of thermal oxidation. There is a spatial distribution of the indentation modulus M' and of the internal friction Qloc-1. This is a consequence of the potential energy landscape for amorphous materials.

  14. Nanoindentation Hardness Measurement in Piling up SiO2 Coating

    Science.gov (United States)

    Cabibbo, M.; Ciccarelli, D.; Spigarelli, S.

    In the last decades much attention has been focused on understanding the factors controlling the shape of the unloading curves obtained by the Oliver and Pharr nanoindentation analysis in order to estimate true contact area, and material parameters such as Young's modulus and hardness. In fact, it is well known that the Oliver and Pharr analysis can overestimate the hardness of materials that plastically deform due to piling up around the indentation. In recent years, different visual and analytical methods have been proposed. The visual methods are based on direct measurements of the produced indentation by scanning probe microscopy (SPM) or by atomic force microscopy (AFM). In the present work, indentation hardness of a SiO2 coating was measured and analyzed by both visual and analytical methods. The SPM-based direct method showed a quite good qualitative and quantitative literature data agreement. This method was thus developed and improved to make it dependent on curve parameters, such as applied load and penetration depth, rather than on SPM measurements of the actual contact area. A correlation of the pile up phenomenon to the m exponent of the P = B(h-hf)m relationship was also discussed.

  15. Optical transitions of self-trapped holes in amorphous SiO2

    International Nuclear Information System (INIS)

    Sasajima, Y.; Tanimura, K.

    2003-01-01

    Optical and electron-spin resonance (ESR) spectroscopy studies of low-temperature electron-irradiated amorphous SiO 2 were carried out to identify optical transitions of self-trapped holes (STHs). Spectroscopic analysis by means of polarized optical bleaching and thermal annealing has revealed two components comprising an absorption band around 2.2 eV: the low-energy component peaking at 2.16 eV and the high energy component at 2.60 eV. These bands are formed with similar yields in three different samples that include different chemical impurities and native defect concentrations. Based on quantitative correlations between ESR signals and optical absorption strengths, the 2.16-eV band is attributed to the two-center type STH, while the 2.60-eV band is attributed to the one-center STH. The origin of STH optical transitions is discussed based on the results of this work and recent theoretical data

  16. Non-iridescent structural colors from uniform-sized SiO2 colloids

    Science.gov (United States)

    Topçu, Gökhan; Güner, Tuğrul; Demir, Mustafa M.

    2018-05-01

    Structural colors have recently attracted interest from diverse fields of research due to their ease of fabrication and eco-friendliness. These types of colors are, in principle, achieved by periodically arranged submicron-diameter colloidal particles. The interaction of light with a structure containing long-range ordered colloidal particles leads to coloration; this usually varies depending on the angle of observation (iridescence). However, the majority of the applications demand constant color that is independent of the viewing angle (non-iridescence). In this work, silica colloids were obtained using the Stöber method at different sizes from 150 to 300 nm in an alcoholic dispersion. The casting of the dispersion on a substrate leaves behind a photonic crystal showing a colorful iridescent film. However, centrifugation and redispersion of the SiO2 particles into fresh solvent may cause the formation of small, aggregated silica domains in the new dispersion. The casting of this dispersion allows for the development of photonic glass, presumably due to the accumulation of aggregates showing stable colloidal film independent of viewing angle. Moreover, depending on the size of the silica colloids, non-iridescent photonic glasses with various colors (violet, blue, green, and orange) are obtained.

  17. Engineering of SiO2 Nanoparticles for Optimal Performance in Nano Cement-Based Materials

    Science.gov (United States)

    Sobolev, K.; Flores, I.; Torres-Martinez, L. M.; Valdez, P. L.; Zarazua, E.; Cuellar, E. L.

    The reported research examined the effect of 5-70 nm SiO2 nanoparticles on the mechanical properties of nano-cement materials. The strength development of portland cement with nano-SiO2 and superplasticizing admixture was investigated. Experimental results demonstrate an increase in the compressive and flexural strength of mortars with developed nanoparticles. The distribution of nano-SiO2 particles within the cement paste plays an essential role and governs the overall performance of these products. Therefore, the addition of a superplasticizer was proposed to facilitate the distribution of nano-SiO2 particles. Superplasticized mortars with 0.25% of selected nano-SiO2 demonstrated a 16% increase of 1-day compressive strength, reaching 63.9 MPa; the 28-day strength of these mortars was 95.9 MPa (vs. strength of reference superplasticized mortars of 92.1 MPa). Increase of 28-day flexural strength of superplasticized mortars with selected nano-SiO2 was 18%, reaching 27.1 MPa. It is concluded that the effective dispersion of nanoparticles is essential to obtain composite materials with improved performance.

  18. Crystallization of a Li2O2SiO2 Glass under High Hydrostatic Pressures

    Science.gov (United States)

    Fuss, T.; Day, D. E.; Lesher, C. E.; Ray, C. S.

    2004-01-01

    The crystallization behavior of a Li2O.2SiO2 (LS2) glass subjected to a uniform hydrostatic pressure of 4.5 or 6 GPa was investigated between 550 and 800 C using XRD, IR, Raman, TEM, NMR, and DTA. The density of the glass subjected to 6 GPa was between 2.52 plus or minus 0.01 and 2.57 plus or minus 0.01 grams per cubic centimeters, depending upon the processing temperatures, and was higher than that of the stoichiometric LS2 crystals, 2.46 plus or minus 0.01 grams per cubic centimeter. Thus, crystallization in 6 GPa glass occurred in a condition of negative volume dilatation, deltaV = V(sub glass) - V(sub crystal), while that for the 4.5 GPa glass occurred in the condition deltaV greater than 0. For deltaV greater than 0, which also includes the control glass at ambient (one atmosphere) pressure, the glasses always crystallize Li2Si2O5 (orthorhombic, Ccc2) crystals, but for deltaV less than 0 (6 GPa), the glasses crystallize Li2SiO3 crystals with a slightly deformed structure. The crystal growth rate vs. temperature curve moved to higher temperature with increasing pressure, and was independent of the sign of deltaV. These results for the effect of hydrostatic pressure on the crystallization of LS2 glass were discussed from thermodynamic considerations.

  19. Ordered Ag nanocluster structures by vapor deposition on pre-patterned SiO2.

    Science.gov (United States)

    Numazawa, Satoshi; Ranjan, Mukesh; Heinig, Karl-Heinz; Facsko, Stefan; Smith, Roger

    2011-06-08

    Highly ordered Ag nanocluster structures have been grown on pre-patterned amorphous SiO(2) surfaces by oblique angle physical vapor deposition at room temperature. Despite the small undulation of the rippled surface, the stripe-like Ag nanoclusters are very pronounced, reproducible and well separated. Computer modeling of the growth has been performed with a lattice-based kinetic Monte Carlo (KMC) method using a combination of a simplified inter-atomic potential and experimental transition barriers taken from the literature. An effective transition event classification method is introduced which allows a boost factor of several thousand compared to a traditional KMC approach, thus allowing experimental time scales to be modeled. The simulation predicts a low sticking probability for the arriving atoms, millisecond order lifetimes for single Ag adatoms and ≈1 nm square surface migration ranges of Ag adatoms. It is also shown that metal nucleations can trigger even on defect free surfaces. The simulations give excellent reproduction of the experimentally observed nanocluster growth patterns.

  20. Atomic characterization of Si nanoclusters embedded in SiO2 by atom probe tomography

    Science.gov (United States)

    2011-01-01

    Silicon nanoclusters are of prime interest for new generation of optoelectronic and microelectronics components. Physical properties (light emission, carrier storage...) of systems using such nanoclusters are strongly dependent on nanostructural characteristics. These characteristics (size, composition, distribution, and interface nature) are until now obtained using conventional high-resolution analytic methods, such as high-resolution transmission electron microscopy, EFTEM, or EELS. In this article, a complementary technique, the atom probe tomography, was used for studying a multilayer (ML) system containing silicon clusters. Such a technique and its analysis give information on the structure at the atomic level and allow obtaining complementary information with respect to other techniques. A description of the different steps for such analysis: sample preparation, atom probe analysis, and data treatment are detailed. An atomic scale description of the Si nanoclusters/SiO2 ML will be fully described. This system is composed of 3.8-nm-thick SiO layers and 4-nm-thick SiO2 layers annealed 1 h at 900°C. PMID:21711666

  1. Atomic characterization of Si nanoclusters embedded in SiO2 by atom probe tomography

    Directory of Open Access Journals (Sweden)

    Gourbilleau Fabrice

    2011-01-01

    Full Text Available Abstract Silicon nanoclusters are of prime interest for new generation of optoelectronic and microelectronics components. Physical properties (light emission, carrier storage... of systems using such nanoclusters are strongly dependent on nanostructural characteristics. These characteristics (size, composition, distribution, and interface nature are until now obtained using conventional high-resolution analytic methods, such as high-resolution transmission electron microscopy, EFTEM, or EELS. In this article, a complementary technique, the atom probe tomography, was used for studying a multilayer (ML system containing silicon clusters. Such a technique and its analysis give information on the structure at the atomic level and allow obtaining complementary information with respect to other techniques. A description of the different steps for such analysis: sample preparation, atom probe analysis, and data treatment are detailed. An atomic scale description of the Si nanoclusters/SiO2 ML will be fully described. This system is composed of 3.8-nm-thick SiO layers and 4-nm-thick SiO2 layers annealed 1 h at 900°C.

  2. Potassium ions in SiO2: electrets for silicon surface passivation

    Science.gov (United States)

    Bonilla, Ruy S.; Wilshaw, Peter R.

    2018-01-01

    This manuscript reports an experimental and theoretical study of the transport of potassium ions in thin silicon dioxide films. While alkali contamination was largely researched in the context of MOSFET instability, recent reports indicate that potassium ions can be embedded into oxide films to produce dielectric materials with permanent electric charge, also known as electrets. These electrets are integral to a number of applications, including the passivation of silicon surfaces for optoelectronic devices. In this work, electric field assisted migration of ions is used to rapidly drive K+ into SiO2 and produce effective passivation of silicon surfaces. Charge concentrations of up to ~5  ×  1012 e cm‑2 have been achieved. This charge was seen to be stable for over 1500 d, with decay time constants as high as 17 000 d, producing an effectively passivated oxide–silicon interface with SRV  <  7 cm s‑1, in 1 Ω cm n-type material. This level of charge stability and passivation effectiveness has not been previously reported. Overall, this is a new and promising methodology to enhance surface passivation for the industrial manufacture of silicon optoelectronic devices.

  3. Hydrogen-related radiation defects in SiO2-based glasses

    International Nuclear Information System (INIS)

    Skuja, Linards; Kajihara, Koichi; Hirano, Masahiro; Hosono, Hideo

    2008-01-01

    Spectroscopic properties of hydrogen atom trapped in an oxygen vacancy in SiO 2 glass were studied. Samples were loaded with D 2 and H 2 gases to convert O vacancies to pairs of Si-D and Si-H groups, and subsequently irradiated by F 2 laser in order to destroy some of these groups. Electron paramagnetic resonance, infrared absorption and visible/UV absorption spectra were measured. Proton hyperfine doublet with splitting of 1.05 mT was found in all H 2 -treated/irradiated samples. UV-bleaching treatment showed that this signal is independent of the other, well-known hydrogen-related signals in silica. The size of the hyperfine splitting corresponds to twice the 1 H nuclear Zeeman splitting in applied magnetic field. The observed 1.05 mT doublet is tentatively attributed to the forbidden nuclear spin-flip transitions of proton trapped in an oxygen vacancy in silica. The allowed EPR transitions of this center are not resolved, possibly reflecting a variation in Si...H distance in oxygen vacancy with a trapped H atom

  4. Neutron irradiation effects in amorphous SiO2: optical absorption and electron paramagnetic resonance

    International Nuclear Information System (INIS)

    Guzzi, M.; Martini, M.; Paleari, A.; Pio, F.; Vedda, A.; Azzoni, C.B.

    1993-01-01

    Optical absorption spectra of as-grown and neutron-irradiated amorphous SiO 2 , both fused natural quartz and synthetic silica, have been analysed in the ultraviolet region below the fundamental edge. The description of the optical spectrum has been further clarified by a detailed study of the spectral components as a function of the neutron irradiation in different types of silica; we have verified known correlations between optical bands and between bands and paramagnetic centres. In 'as-grown' fused quartz samples, a previously unreported band at 6.2 eV has been detected. 'As-grown' synthetic silicas do not show any band, up to the intrinsic absorption edge. In the irradiated samples, the experimental results suggest a correlation between two bands at 5.8 and 7.1 eV, while previous attribution of the bands at 5.0 eV (B 2 band) and 7.6 eV (E band) to the same defect is discussed. The role of impurities in the optical absorption and in the radiation hardness is also considered. (author)

  5. Porous asymmetric SiO2-g-PMMA nanoparticles produced by phase inversion

    KAUST Repository

    Munirasu, Selvaraj

    2014-07-22

    A new kind of asymmetric organic-inorganic porous structure has been proposed. Asymmetric lattices of polymer grafted silica nanoparticles were manufactured by casting and phase inversion in water. Silica nanoparticles were first functionalized with 3-(dimethylethoxysilyl)propyl-2-bromoisobutyrate, followed by grafting of poly(methylmethacrylate) (PMMA) segments, performed by atom-transfer radical polymerization. Mechanically stable self-standing films were prepared by casting a dispersion of functionalized nanoparticles in different solvents and immersion in water. The resulting asymmetrically porous morphology and nanoparticle assembly was characterized by scanning electron and atomic force microscopy. The PMMA functionalized SiO2 hybrid material in acetone or acetone/dioxane led to the best-assembled structures. Porous asymmetric membranes were prepared by adding free PMMA and PMMA terminated with hydrophilic hydroxyl group. Nitrogen flow of 2800 L m-2 h -1 was measured at 1.3 bar demonstrating the porosity and potential application for membrane technology. © 2014 Springer Science+Business Media New York.

  6. Fabrication of Nb2O5/SiO2 mixed oxides by reactive magnetron co-sputtering

    International Nuclear Information System (INIS)

    Juškevičius, Kęstutis; Audronis, Martynas; Subačius, Andrius; Kičas, Simonas; Tolenis, Tomas; Buzelis, Rytis; Drazdys, Ramutis; Gaspariūnas, Mindaugas; Kovalevskij, Vitalij; Matthews, Allan; Leyland, Adrian

    2015-01-01

    This paper investigates niobia/silica mixed oxide thin films deposited by reactive pulse-DC/RF magnetron co-sputtering of Nb and Si metal targets at room temperature. The reactive gas flow during the sputtering processes was either controlled by direct mass flow rate (i.e. constant reactive gas flow) or by an active feedback process control system. 61% and 137% higher deposition rates of Nb 2 O 5 and SiO 2 layers, respectively, were obtained using the latter technique as compared to constant reactive gas flow. Films exhibited bulk or near-bulk density. All mixture films produced in this study had an amorphous structure. A volume law of mixtures was used to determine the coating composition. It is shown that the fraction of SiO 2 or/and Nb 2 O 5 has a linear dependency on sputter target power density. On this basis, rugate filter coating designs can be easily deposited, where refractive index gradually varies between that of pure Nb 2 O 5 and pure SiO 2 . Substantially less inhomogeneity of coating mixtures was found in films produced using a reactive sputtering process with feedback-control. - Highlights: • 61% and 137% increase in deposition rates of Nb 2 O 5 and SiO 2 • Rugate coating designs can be readily deposited. • Nb 2 O 5 /SiO 2 mixture films exhibited bulk or near-bulk density. • Optimized process leads to stoichiometric and homogenous mixtures. • Films are amorphous and suitable for low loss optical coatings

  7. Regulating effect of SiO2 interlayer on optical properties of ZnO thin films

    International Nuclear Information System (INIS)

    Xu, Linhua; Zheng, Gaige; Miao, Juhong; Su, Jing; Zhang, Chengyi; Shen, Hua; Zhao, Lilong

    2013-01-01

    ZnO/SiO 2 nanocomposite films with periodic structure were prepared by electron beam evaporation technique. Regulating effect of SiO 2 interlayer with various thicknesses on the optical properties of ZnO/SiO 2 thin films was investigated deeply. The analyses of X-ray diffraction show that the ZnO layers in ZnO/SiO 2 nanocomposite films have a wurtzite structure and are preferentially oriented along the c-axis while the SiO 2 layers are amorphous. The scanning electron microscope images display that the ZnO layers are composed of columnar grains and the thicknesses of ZnO and SiO 2 layers are all very uniform. The SiO 2 interlayer presents a significant modulation effect on the optical properties of ZnO thin films, which is reflected in the following two aspects: (1) the transmittance of ZnO/SiO 2 nanocomposite films is increased; (2) the photoluminescence (PL) of ZnO/SiO 2 nanocomposite films is largely enhanced compared with that of pure ZnO thin films. The ZnO/SiO 2 nanocomposite films have potential applications in light-emitting devices and flat panel displays. -- Highlights: ► ZnO/SiO 2 nanocomposite films with periodic structure were prepared by electron beam evaporation technique. ► The SiO 2 interlayer presents a significant modulation effect on the optical properties of ZnO thin films. ► The photoluminescence of ZnO/SiO 2 nanocomposite films is largely enhanced compared with that of pure ZnO thin films. ► The ZnO/SiO 2 nanocomposite films have potential applications in light-emitting devices and flat panel displays

  8. Research of water-base nano-PU paint for heat insulation

    Science.gov (United States)

    Jwo, Ching-Song; Jeng, Lung-Yue; Cheng, Ho; Chen, Sih-Li

    2008-12-01

    The purpose of this study is to research and produce water-base nano-PU paint with energy conservation, environmental consciousness and high efficiency of heat insulation, which can be enhance the traditional PU paint for performance improvement of heat insulation and range of application. In this study, research will be held on the two-stage synthesis method. The SiO2 nanoparticles are added into the water-base PU paint to improve the properties of traditional PU paint. Next, the fundamental properties of this paint, including water resistance, weather rsistance, weak acid solvent resistance, and heat insulation rate, will be measured and analyzed, and the performance of heat insulation will be evaluated in order to confirm the performance and practicability of the heat insulation of water-base nano-PU paint in this study. The experimental results show that for the SiO2/W-PU composite nanopaint prepared by two-stage synthesis method, the dispersion of SiO2 powder in the water-base PU (W-PU) paint is even. For the SiO2/W-PU nanocomposite paint prepared by adding SiO2 powder at 8% wt. to the marketed water-base PU, the water absorption of its experimental sample is enhanced by around 10.1 times, whereas its weak acid dissolve erosion rate is increased by 3.3 times. However, the average heat insulation rate in the thermal properties is also increased, increasing around 24.22% for the W-PU paint without SiO2 powder. Through the multilayered coating construction, the water-base nano-PU paint added with SiO2 powder can be used on any facility of heat insulation, including vehicle, safety helmet, umbrella, drapes, and outer wall of building. The newly developed water-base nano-PU paint with high thermal resistance is especially suitable for application to the shell coating of air conditioner and cooling tower,. Due to the better thermal resistance of this nanopaint, the problems of poor heat transfer and temperature rise of cooling water caused by direct sunlight can be

  9. Effect of ring-shaped SiO2 current blocking layer thickness on the external quantum efficiency of high power light-emitting diodes

    Science.gov (United States)

    Zhou, Shengjun; Liu, Mengling; Hu, Hongpo; Gao, Yilin; Liu, Xingtong

    2017-12-01

    A ring-shaped SiO2 CBL underneath the p-electrode was employed to enhance current spreading of GaN-based light-emitting diodes (LEDs). Effects of ring-shaped SiO2 current blocking layer (CBL) thickness on optical and electrical characteristics of high power LEDs were investigated. A 190-nm-thick ring-shaped SiO2 CBL with inclined sidewalls was obtained using a combination of a thermally reflowed photoresist technique and an inductively coupled plasma (ICP) etching process, allowing for the deposition of conformal indium tin oxide (ITO) transparent conductive layer on sidewalls of ring-shaped SiO2 CBL. It was indicated that the external quantum efficiency (EQE) of high power LEDs increased with increasing thickness of ring-shaped SiO2 CBL. The EQE of high power LED with 190-nm-thick ring-shaped SiO2 CBL was 12.7% higher than that of high power LED without SiO2 CBL. Simulations performed with commercial SimuLED software package showed that the ring-shaped SiO2 CBL could significantly alleviate current crowding around p-electrode, resulting in enhanced current spreading over the entire high power LED structure.

  10. Growth Mode Study of MgCl2 on Ti (0001 and SiO2 under Ultra High Vacuum by XPS

    Directory of Open Access Journals (Sweden)

    S. Karakalos

    2012-12-01

    Full Text Available The growth mode of MgCl2 on Ti (0001 and on SiO2 grown on Si (100 was investigated by X-ray Photoelectron Spectroscopy (XPS under UHV conditions. Magnesium chloride grows on both Ti (0001 single crystal and SiO2 following the Frank-van der Merve, (FM growth mode.

  11. Energy transfer between doubly doped Er3+, Tm3+and Ho3+ rare earth ions in SiO2 nanoparticles

    CSIR Research Space (South Africa)

    Dhlamini, MS

    2011-04-01

    Full Text Available Preparation of Er3+, Ho3+ and Tm3+ ions co-doped SiO2 nanoparticle phosphor powders by sol gelmethod is reported. The morphology and the particle size of the SiO2 hostmatrix were confirmed by field emission scanning electron microscopy (FESEM...

  12. SiC/C composites prepared from wood-based carbons by pulse current sintering with SiO2 : Electrical and thermal properties

    NARCIS (Netherlands)

    Fujisawa, M; Hata, T; Bronsveld, P; Castro, [No Value; Tanaka, F; Kikuchi, H; Furuno, T; Imamura, Y

    2004-01-01

    A powder mix of wood charcoal and SiO2 was sintered into a SiC/C composite. The heat treatment temperatures were 1400-1800 degreesC, the SiO2 concentration 0, 10, 30 and 50 wt.% with respect to the dry weight of wood charcoal. The microstructure, electrical resistance and thermal conductivity were

  13. The influence of SiO2 Addition on 2MgO-Al2O3-3.3P2O5 Glass

    DEFF Research Database (Denmark)

    Larsen, P.H.; Poulsen, F.W.; Berg, Rolf W.

    1999-01-01

    2MgO-Al2O3-3.3P2O5 glasses with increasing amounts of SiO2 are considered for sealing applications in Solid Oxide Fuel Cells (SOFC). The change in chemical durability under SOFC anode conditions and the linear thermal expansion is measured as functions of the SiO2 concentration. Raman spectroscopy...

  14. Luminescence dependence of Pr3+ activated SiO2 nanophosphor on Pr3+ concentration, temperature, and ZnO incorporation

    CSIR Research Space (South Africa)

    Mhlongo, GH

    2011-08-01

    Full Text Available Green-emitting ZnO nanoparticles were successfully embedded in Pr3+-doped SiO2 by a sol–gel method resulting in a red-emitting ZnO·SiO2:Pr3+ nanocomposite phosphor. The particle morphology and luminescent properties of SiO2:Pr3+ phosphor powders...

  15. Dehydration of glucose to 5-hydroxymethylfurfural by a core-shell Fe3O4@SiO2-SO3H magnetic nanoparticle catalyst

    Science.gov (United States)

    This paper discusses the potential use of (Fe3O4@SiO2-SO3H) nanoparticle catalyst for the dehydration of glucose into 5-hydroxymethylfurfural (HMF). A magnetically recoverable (Fe3O4@SiO2-SO3H) nanoparticle catalyst was successfully prepared by supporting sulfonic acid groups (SO3H) on the surface o...

  16. The Experimental Degradation of Microorganisms Exposed to Mn(II) and SiO2 Over Time

    Science.gov (United States)

    Schelble, R. T.; Hall, J. A.; Fogel, M. L.; Jahnke, L. L.; Nealson, K. H.; Steele, A.

    2005-12-01

    The sedimentary origin of early Proterozoic massive manganese deposits in the geological record is often attributed in part to the impact of biological processes. Although it seems possible that widespread algal blooms in near-shore oceanic environments caused the oxidation of reduced manganese from ocean waters, direct evidence of microorganisms (i.e. microfossils or chemical biosignatures) have not been identified in early Proterozoic manganiferous deposits. The purpose of this study was to identify the potential for biosignature preservation in remnant ancient manganese deposits by monitoring the degradation of modern microorganisms exposed to varying concentrations of Mn(II). Given that most early Proterozoic microfossils have been found in siliceous rocks, similar experiments were carried out using silica-rich solutions for comparison. Bacillus subtilis (gram-positive) and Escherichia coli (gram-negative) were exposed to various Mn(II)- and silica-rich solutions over a period of 180 days. The degradation of a short-duration biomarker (DNA), and longer-duration biomarkers (phospholipid fatty acids and their derivative n-alkanes) were investigated. The degradation of DNA was quantified using real time PCR (RT-PCR) and microorganism specific and general bacteria primers. DNA longevity decreased with higher concentrations of manganese (up to 1000 ppm Mn(II)) when compared with control microorganisms suspended in solutions without manganese. This effect was more dramatic in the E. coli incubations. Relatively steady decreases in the longevity of B. subtilis DNA were observed when cells were exposed to Mn(II). This may be due to the ability of the organism to sporulate, which may protect the DNA from rapid degradation. B. subtilis DNA persisted longer when cells were exposed to undersaturated SiO2 solution (100 ppm SiO2), than those exposed to supersaturated SiO2 solutions (1000 ppm and 3000 ppm). The preservation potential of E. coli DNA showed no differences between undersaturated SiO2, supersaturated SiO2, and controls without silica. Lipid degradation experiments are currently in progress. With an understanding of the longevity of biomarkers in Mn(II)- and SiO2-rich environments we can gain insight into the possibility of discovering the presence and distribution of life during deposition of the sedimentary rock record.

  17. Formation of SiO2 film by chemical vapor deposition enhanced by atomic species extracted from a surface-wave generated plasma

    Science.gov (United States)

    Okada, H.; Baba, M.; Furukawa, M.; Yamane, K.; Sekiguchi, H.; Wakahara, A.

    2017-01-01

    In this study, we have investigated SiO2 deposition by chemical vapor deposition enhanced by neutral oxygen at the ground state extracted from a surface-wave generated plasma proposed by our group at 350°C using hexamethyldisilane (HMDS) as a precursor. Good properties of deposited SiO2 having refractive index of n = 1.45-1.46 have been confirmed by ellipsometry. Stoichiometric SiO2 was also confirmed by X-ray photoelectron spectroscopy (XPS) with single peak of Si 2p and O 1s. High quality SiO2 film deposition was also confirmed by Fourier transform infrared spectrometer (FT-IR) analysis indicating formation of chemical bonding in SiO2 with no unwanted bonds due to -OH or -CH3 groups.

  18. Photocatalytic application of TiO2/SiO2-based magnetic nanocomposite (Fe3O4@SiO2/TiO2 for reusing of textile wastewater

    Directory of Open Access Journals (Sweden)

    Laleh Enayati Ahangar

    2016-01-01

    Full Text Available In this research we have developed a treatment method for textile wastewater by TiO2/SiO2-based magnetic nanocomposite. Textile wastewater includes a large variety of dyes and chemicals and needs treatments. This manuscript presents a facile method for removing dyes from the textile wastewater by using TiO2/SiO2-based nanocomposite (Fe3O4@SiO2/TiO2 under UV irradiation. This magnetic nanocomposite, as photocatalytically active composite, is synthesized via solution method in mild conditions. A large range of cationic, anionic and neutral dyes including: methyl orange, methylene blue, neutral red, bromocresol green and methyl red are used for treatment investigations. Neutral red and bromocresol green have good results in reusing treatment. The high surface area of nanocomposites improve the kinetic of wastewater treatment. In this method, by using the magnetic properties of Fe3O4 nanoparticles, TiO2-based photocatalyst could be separated and reused for 3 times. The efficiency of this method is respectively 100% and 65% for low concentration (10 ppm and high concentration (50 ppm of neutral red and bromocrosol green after 3 h treatment. The efficiency of treatment using the second used nanocomposite was 90% for 10 ppm of the same dyes.

  19. Characterisation of NdFeB thin films prepared on (100)Si substrates with SiO2 barrier layers

    International Nuclear Information System (INIS)

    Sood, D.K.; Muralidhar, G.K.

    1998-01-01

    This work presents a systematic study of the deposition and characterization of NdFeB films on substrates of Si(100) and of SiO2 layer thermally grown on Si(100) held at RT, 360 deg C or 440 deg C. The post-deposition annealing is performed at 600 or 800 deg C in vacuum. The films are characterised using the analytical techniques of RBS, SIMS, XRD, OM and SEM. Results indicate that SiO2 is, in deed, an excellent diffusion barrier layer till 600 deg C but becomes relatively less effective at 800 deg C. Without this barrier layer, interdiffusion at the Si-NdFeB film interface leads to formation of iron silicides, α-Fe and B exclusion from the diffusion zone, in competition with the formation of the magnetic NdFeB phase. (authors)

  20. Additivity of kinetic and potential energy contributions in modification of graphene supported on SiO2

    Science.gov (United States)

    Zhang, Xitong; Zhao, Shijun; Wang, Yuyu; Xue, Jianming

    2017-04-01

    The damage production induced by MeV highly charged ions (HCI) irradiations in graphene supported on a SiO2 substrate is investigated using molecular dynamics method. We get results in agreement with our recent experiments. We find that the electronic energy loss and potential energy deposition have similar effects on the defects creation in SiO2 substrate-supported graphene and both mechanisms of energy deposition seem to contribute in an additive way. The influences of the energy deposition depth and radius are studied. Only the energy deposited below the surface within 2.5 nm will induce the damage in graphene. Hence, the HCI can be a powerful tool to induce defects in graphene without causing deep damage of the substrate. When charge of incident Xeq+ is above 30, a nanopore is formed and the size of nanopore in graphene can be controlled by changing the incident charge state.

  1. Determination of phosphorus distribution in the region of a SiO2-Si interface by substoichiometric analysis

    International Nuclear Information System (INIS)

    Shigematsu, T.; Yonezawa, H.

    1994-01-01

    A simplified method for the substoichiometric analysis of phosphorus has been developed and applied to determine the concentration distribution of phosphorus in the region of a SiO 2 -Si interface in order to explain why phosphorus is lost from the ion-implanted silicon surface throughout the oxidation and oxide removal processes. It is revealed that phosphorus piles up on the SiO 2 side at the interface by the thermal oxidation of silicon surface and is removed with the oxide by wet etching and with the resulting silicon by RCA cleaning. This results in a total loss of ion-implanted phosphorus of 3.5%. (author) 11 refs.; 2 figs.; 3 tabs

  2. Highly sensitive and thermal stable CO gas sensor based on SnO2 modified by SiO2.

    Science.gov (United States)

    Zhan, Zili; Chen, Juling; Guan, Shaokang; Si, Lifen; Zhang, Pengshuai

    2013-02-01

    Effects of surface chemical modification with SiO2 on the thermal stability and CO gas-sensing properties of SnO2 were investigated. The SiO2 on the SnO2 surface effectively inhibits the nanocrystal growth of SnO2. The average size of modified SnO2 sintered at 600 degrees C is 5.8 nm. The gas sensitivity to CO was found to be markedly enhanced by the surface chemical modification. The CO gas as low as 5 ppm can be effectively detected by the modified SnO2-based sensors. At the same time, the modified SnO2-based sensor has excellent selectivity to CO, fast response and recovery properties.

  3. Biocomposite of Cassava Starch Reinforced with Cellulose Pulp Fibers Modified with Deposition of Silica (SiO2 Nanoparticles

    Directory of Open Access Journals (Sweden)

    Joabel Raabe

    2015-01-01

    Full Text Available Eucalyptus pulp cellulose fibers were modified by the sol-gel process for SiO2 superficial deposition and used as reinforcement of thermoplastic starch (TPS. Cassava starch, glycerol, and water were added at the proportion of 60/26/14, respectively. For composites, 5% and 10% (by weight of modified and unmodified pulp fibers were added before extrusion. The matrix and composites were submitted to thermal stability, tensile strength, moisture adsorption, and SEM analysis. Micrographs of the modified fibers revealed the presence of SiO2 nanoparticles on fiber surface. The addition of modified fibers improved tensile strength in 183% in relation to matrix, while moisture adsorption decreased 8.3%. Such improvements were even more effective with unmodified fibers addition. This result was mainly attributed to poor interaction between modified fibers and TPS matrix detected by SEM analysis.

  4. Soft nanoimprint lithography on SiO2 sol-gel to elaborate sensitive substrates for SERS detection

    Science.gov (United States)

    Hamouda, Frédéric; Bryche, Jean-François; Aassime, Abdelhanin; Maillart, Emmanuel; Gâté, Valentin; Zanettini, Silvia; Ruscica, Jérémy; Turover, Daniel; Bartenlian, Bernard

    2017-12-01

    This paper presents a new alternative fabrication of biochemical sensor based on surface enhanced Raman scattering (SERS) by soft nanoimprint lithography (S-NIL) on SiO2 sol-gel. Stabilization of the sol-gel film is obtained by annealing which simplifies the manufacturing of these biosensors and is compatible with mass production at low cost. This detector relies on a specific pattern of gold nanodisks on a thin gold film to obtain a better sensitivity of molecules' detection. Characterizations of SERS devices were performed on a confocal Raman microspectrophotometer after a chemical functionalization. We report a lateral collapse effect on poly(diméthylsiloxane) (PDMS) stamp for specific nanostructure dimensions. This unintentional effect is used to evaluate S-NIL resolution in SiO2 sol-gel.

  5. Effect of hydrostatic pressure on photoluminescence spectra from structures with Si nanocrystals fabricated in SiO2 matrix

    International Nuclear Information System (INIS)

    Zhuravlev, K.S.; Tyschenko, I.E.; Vandyshev, E.N.; Bulytova, N.V.; Misiuk, A.; Rebohle, L.; Skorupa, W.

    2002-01-01

    The effect of hydrostatic pressure applied at high temperature on photoluminescence of Si-implanted SiO 2 films was studied. A 'blue'-shift of PL spectrum from the SiO 2 films implanted with Si + ions to total dose of 1.2x10 17 cm -2 with increase in hydrostatic pressure was observed. For the films implanted with Si + ions to a total dose of 4.8x10 16 cm -2 high temperature annealing under high hydrostatic pressure (12 kbar) causes a 'red'-shift of photoluminescence spectrum. The 'red' photoluminescence bands are attributed to Si nanocrystals while the 'blue' ones are related to Si nanocrystals of reduced size or chains of silicon atoms or Si-Si defects. A decrease in size of Si nanocluster occurs in result of the pressure-induced decrease in the diffusion of silicon atoms. (author)

  6. Dielectric properties of bismuth titanate ceramics containing SiO2 and Nd2O3 as additives

    Directory of Open Access Journals (Sweden)

    Stanislav S. Slavov

    2012-09-01

    Full Text Available Bismuth-titanate ceramics containing SiO2 and Nd2O3 as additives are synthesized by melt quenching method in the system Bi2O3-TiO2-Nd2O3-SiO2 in the temperature range of 1250–1500 °C. The phase composition of the obtained materials is determined by X-ray diffraction analysis and energy dispersive spectroscopy. Using scanning electron microscopy different microstructures are observed in the samples depending on the composition. Different values of conductivity, dielectric losses and relative permittivity are obtained depending on the composition. It is established that all investigated samples are dielectric materials with conductivity between 10^-9 and 10^-13 (Ω·cm^-1 at room temperature, dielectric permittivity from 1000 to 3000 and dielectric losses tgδ between 0.0002 and 0.1.

  7. Silicon electrodeposition from chloride-fluoride melts containing K2SiF6 and SiO2

    Directory of Open Access Journals (Sweden)

    Zhuk Sergey I.

    2017-01-01

    Full Text Available Silicon electrodeposition on glassy carbon from the KF-KCl-K2SiF6, KF-KCl-K2SiF6-KOH and KF-KCl-K2SiF6-SiO2 melts was studied by the cyclic voltammetry. Тhe electroreduction of Si(IV to metallic Si was observed as a single 4-electron wave under all considered conditions. The reactions of cathode reduction of silicon from fluoride and oxyfluoride complexes were suggested. It was shown that the process can be controlled by the preliminary transformation of SiO44- to SiF62- and SiOxFyz-. The influence of the current density on structure and morphology of silicon deposits obtained during galvanostatic electrolysis of the KF-KCl-K2SiF6-SiO2 melt was studied.

  8. Preparation and optical properties of SiO2 stablized SnO2 quantum dot films

    International Nuclear Information System (INIS)

    Peng Qiangxiang; Li Zhijie; Zu Xiaotao

    2009-01-01

    SiO 2 stabilized SnO 2 quantum dot were prepared by sol-gel-hydrothermal process. Then SnO 2 quantum dot thin films were obtained by spin-coating with preprocess of well dispersing SnO 2 quantum dots in SiO 2 sol. The as-prepared SnO 2 quantum dots showed tetragonal rutile crystal structure and quantum dot radius of about 4.0 nm. The optical bad gap of the thin films was derived from UV-vis transmission spectra, with value of about 3.96 eV. The SnO 2 quantum dot thin films showed multi-peak photoluminescence properties at room temperature, mainly excitation emission at 356 nm and defect emission at 388 nm. (authors)

  9. High Temperature Stable Separator for Lithium Batteries Based on SiO2 and Hydroxypropyl Guar Gum

    Directory of Open Access Journals (Sweden)

    Diogo Vieira Carvalho

    2015-10-01

    Full Text Available A novel membrane based on silicon dioxide (SiO2 and hydroxypropyl guar gum (HPG as binder is presented and tested as a separator for lithium-ion batteries. The separator is made with renewable and low cost materials and an environmentally friendly manufacturing processing using only water as solvent. The separator offers superior wettability and high electrolyte uptake due to the optimized porosity and the good affinity of SiO2 and guar gum microstructure towards organic liquid electrolytes. Additionally, the separator shows high thermal stability and no dimensional-shrinkage at high temperatures due to the use of the ceramic filler and the thermally stable natural polymer. The electrochemical tests show the good electrochemical stability of the separator in a wide range of potential, as well as its outstanding cycle performance.

  10. High resolution photolithography using arrays of polystyrene and SiO2 micro- and nano-sized spherical lenses

    Science.gov (United States)

    Dvoretckaia, L. N.; Mozharov, A. M.; Mukhin, I. S.

    2017-11-01

    Photolithography mask made of close-packed array of micro- and nano-sized spherical lenses allows to obtain the ordered structures and provides highest “optical resolution/cost” ratio between all existing photolithography and laser direct writing methods. In this letter, we present results of modeling the propagation of a plane wave falling on the array of quartz (SiO2) microspherical lenses and focusing in the image reverse photoresist layer. We present here experimental results on fabrication of ordered arrays of submicron wells and columns and substrate preparation for growth of monocrystalline nanowires on metal surface using photolithography with mask of SiO2 microspheres. Such ordered nano-sized arrays of wells and columns can be used in fabrication of further growth of monocrystalline nanowires, quantum dots and production of plasmon structures.

  11. A metal/insulator tunnel transistor with 16 nm channel length

    OpenAIRE

    Sasajima, Ryouta; Fujimaru, Kouji; Matsumura, Hideki

    1999-01-01

    A nanometer transistor, metal/insulator tunnel transistor (MITT), which consists of only metal and insulator is experimentally studied. In the MITT, the Fowler-Nordheim tunneling currents through an insulator in lateral metal/insulator/metal structure are controlled by changing a voltage at a gate electrode upon the middle insulator, due to variation of tunnel-barrier thickness at the insulator. It is demonstrated that the MITT with 16 nm channel length fabricated by conventional photolithogr...

  12. Fabrication and characterization of TiO2/SiO2 based Bragg reflectors for light trapping applications

    Directory of Open Access Journals (Sweden)

    R.S. Dubey

    Full Text Available Distributed Bragg reflectors (DBRs have received an intensive attention due to their increasing demand in optoelectronic and photonic devices. Such reflectors are capable to prohibit the light propagation within the specified wavelength range of interest. In this paper, we present the fabrication of TiO2/SiO2 stacks based Bragg reflectors by using a simple and in-expensive sol-gel spin coating technique. The prepared single-layer thin films of TiO2 and SiO2 onto glass substrates were characterized for their optical constants. By tuning the process parameters, one-seven DBR stacks of TiO2/SiO2 were prepared. The corresponding shift of the Bragg reflection peak was observed with the increased number of DBR stacks and as much as about 90% reflectance is observed from the 7DBR stacks. The experimentally measured reflectance was compared with the simulated one, which showed good in agreement. FESEM measurement has confirmed the formation of bright and dark strips of TiO2 and SiO2 films with their thicknesses 80 and 115 nm respectively. The simulation study was explored to a design of thin film silicon solar cell using 7DBR stacks. An enhancement in light absorption in the visible wavelength range is observed which coincides with the experimental result of the reflectance. The use of DBR at the bottom of the solar cell could felicitate the better light harvesting with the occurrence of Fabry-Perot resonances in the absorbing layer. Keywords: Bragg reflector, Photonic bandgap, Sol-gel coating, Reflection, Absorption

  13. Fabrication and characterization of TiO2/SiO2 based Bragg reflectors for light trapping applications

    Science.gov (United States)

    Dubey, R. S.; Ganesan, V.

    Distributed Bragg reflectors (DBRs) have received an intensive attention due to their increasing demand in optoelectronic and photonic devices. Such reflectors are capable to prohibit the light propagation within the specified wavelength range of interest. In this paper, we present the fabrication of TiO2/SiO2 stacks based Bragg reflectors by using a simple and in-expensive sol-gel spin coating technique. The prepared single-layer thin films of TiO2 and SiO2 onto glass substrates were characterized for their optical constants. By tuning the process parameters, one-seven DBR stacks of TiO2/SiO2 were prepared. The corresponding shift of the Bragg reflection peak was observed with the increased number of DBR stacks and as much as about 90% reflectance is observed from the 7DBR stacks. The experimentally measured reflectance was compared with the simulated one, which showed good in agreement. FESEM measurement has confirmed the formation of bright and dark strips of TiO2 and SiO2 films with their thicknesses 80 and 115 nm respectively. The simulation study was explored to a design of thin film silicon solar cell using 7DBR stacks. An enhancement in light absorption in the visible wavelength range is observed which coincides with the experimental result of the reflectance. The use of DBR at the bottom of the solar cell could felicitate the better light harvesting with the occurrence of Fabry-Perot resonances in the absorbing layer.

  14. BF3.SiO2: an efficient catalyst for the synthesis of azo dyes at room temperature

    Directory of Open Access Journals (Sweden)

    Bi Bi Fatemeh Mirjalili

    2012-07-01

    Full Text Available A rapid one-pot method has been developed for the synthesis of azo dyes via ‎sequential diazotization–diazo coupling of aromatic amines with coupling agents at room ‎temperature in the presence of BF3.SiO2 as acidic catalyst. The obtained aryl diazonium salts bearing silica supported boron tri-flouride counter ion‎ was sufficiently stable to be kept at room ‎temperature in the dry state.‎

  15. Processing and properties of AA7075/ porous SiO2-MgO-Al2O3 composite

    OpenAIRE

    M.H. Robert; A.F. Jorge

    2012-01-01

    Purpose: the work presents a new composite based in Al matrix reinforced with porous, lightweight and low cost SiO2/MgO/Al2O3 ceramic particles. The new material can present a unique combination of properties: those related to metal/ceramic composites and still associating some characteristics of cellular materials, as the low density and high plastic deformation under compression stresses.Design/methodology/approach: processing technique involves the infiltration of AA7075 alloy in the semis...

  16. Magnetic properties of the SiO2(Co)/GaAs interface: Polarized neutron reflectometry and SQUID magnetometry

    Science.gov (United States)

    Ukleev, V. A.; Grigoryeva, N. A.; Dyadkina, E. A.; Vorobiev, A. A.; Lott, D.; Lutsev, L. V.; Stognij, A. I.; Novitskiy, N. N.; Mistonov, A. A.; Menzel, D.; Grigoriev, S. V.

    2012-10-01

    The effect of giant injection magnetoresistance (GIMR) was recently observed in a granular SiO2/(54-75 at. % Co) film on a semiconductor GaAs substrate in a temperature range near T=300 K. The magnetoresistance coefficient reaches a value of 105% in a magnetic field of 1.9 T and at a voltage of 90 V. A structural model of the film was proposed based on the results of the grazing-incidence small-angle scattering (GISAXS) and x-ray reflectivity, which showed a specific interface layer 70-75 Å thick separating bulk SiO2(Co) granular film from the semiconductor substrate. This layer is formed by a monolayer of flattened Co particles which are laterally spaced apart much further than the particles in the bulk film. In the present work, using polarized neutron reflectometry (PNR), we study both the structural and magnetic properties of SiO2(Co) film separately in the bulk and in the interface layer, which is possible due to the depth resolution of the method. Temperature-dependent PNR and magnetization measurements performed by Superconducting Quantum Interference Device (SQUID) revealed the occurrence of two types of magnetic nanoparticles with different blocking temperatures and magnetization. The magnetization hysteresis curve demonstrated specific two-loop structure in fields 0.5-2 T. Thus our self-consistent results of PNR, GISAXS, and SQUID measurements emphasize the role of the interface features in the SiO2(Co)/GaAs heterostructures and show a direction for further development of the GIMR theory.

  17. Surface enhanced Raman spectroscopy in nanofibers mats of SiO2-TiO2-Ag

    Directory of Open Access Journals (Sweden)

    José Hafid Roque-Ruiz

    Full Text Available Surface-enhanced Raman scattering (SERS is a powerful tool with high potential for detection of dilute analytes. Nanofibers functionalized by metal nanostructures and particles are exploited as effective flexible substrates for SERS analysis. SERS-active substrates of silice-titania-silver (SiO2-TiO2-Ag nanofibers were prepared using a simple approach involving electrospinning. We report a simple method for quantitative SERS analysis using SiO2-TiO2-Ag nanofibers as the SERS substrate. Precursors SiO2 and TiO2 were synthetized through the sol-gel method and then incorporated into a polymeric PVP matrix; later they were processed by coaxial electrospinning to obtain fibers with an average diameter of 250 nm. The SiO2-TiO2-Ag structure was demonstrated by Raman, XRD, IR, SEM and EDX. Through infrared spectroscopy it was possible to evaluate the thermal evolution of the sol-gel process. The Titania phase transformation was observed around 800 °C and the hydroxyl group loss was detected between 500 and 800 °C. The presence of two Titania phases, anatase and rutile were analized with DRX. Using Pyridine (1 nM as probe molecule the SERS effect of the scaffold was evaluated and it was determined that the vibration modes 8a, 8b, and 15 were the most amplified signals with a 3 orders of magnitude factor. With this it was concluded that the Silica-Titania-Silver Scaffold is a feasible as a SERS enhancer. Keywords: Electrospinning, Sol-gel, SERS

  18. Surface enhanced Raman spectroscopy in nanofibers mats of SiO2-TiO2-Ag

    Science.gov (United States)

    Roque-Ruiz, José Hafid; Martínez-Máynez, Héctor; Zalapa-Garibay, Manuela Alejandra; Arizmendi-Moraquecho, Ana; Farias, Rurik; Reyes-López, Simón Yobanny

    Surface-enhanced Raman scattering (SERS) is a powerful tool with high potential for detection of dilute analytes. Nanofibers functionalized by metal nanostructures and particles are exploited as effective flexible substrates for SERS analysis. SERS-active substrates of silice-titania-silver (SiO2-TiO2-Ag) nanofibers were prepared using a simple approach involving electrospinning. We report a simple method for quantitative SERS analysis using SiO2-TiO2-Ag nanofibers as the SERS substrate. Precursors SiO2 and TiO2 were synthetized through the sol-gel method and then incorporated into a polymeric PVP matrix; later they were processed by coaxial electrospinning to obtain fibers with an average diameter of 250 nm. The SiO2-TiO2-Ag structure was demonstrated by Raman, XRD, IR, SEM and EDX. Through infrared spectroscopy it was possible to evaluate the thermal evolution of the sol-gel process. The Titania phase transformation was observed around 800 °C and the hydroxyl group loss was detected between 500 and 800 °C. The presence of two Titania phases, anatase and rutile were analized with DRX. Using Pyridine (1 nM) as probe molecule the SERS effect of the scaffold was evaluated and it was determined that the vibration modes 8a, 8b, and 15 were the most amplified signals with a 3 orders of magnitude factor. With this it was concluded that the Silica-Titania-Silver Scaffold is a feasible as a SERS enhancer.

  19. H2O and O2 molecules in amorphous SiO2: Defect formation and annihilation mechanisms

    International Nuclear Information System (INIS)

    Bakos, T.; Rashkeev, S.N.; Pantelides, S.T.

    2004-01-01

    Interstitial water and oxygen molecules are ubiquitous impurities and participate in various defect formation processes in thermally grown SiO 2 films and synthetic silica glass. Using results of first-principles calculations we report the types of defects (including different possible charge states) that H 2 O and O 2 molecules may form in bulk amorphous SiO 2 . We calculate their formation energies and, in the most interesting cases, the energy barriers in order to map out the most likely defect formation scenarios. In particular, we show that water molecules may form double silanol groups (Si-OH) as well as H 3 O + and OH - ions at a low energy cost with a barrier of about 1.5 eV. The formation energies of other defects emanating from H 2 O interstitials are, however, too high to be thermally activated. We found that O 2 molecules may form ozonyl (Si-O-O-O-Si) linkages with an energy barrier of ∼2.4 eV. An explanation for the oxygen isotope exchange observed in thin SiO 2 films near the Si-SiO 2 and SiO 2 -vacuum interfaces is suggested based on the energy barrier for ozonyl formation being commensurate with the O 2 diffusion barrier close to the Si/SiO 2 interface and the O 2 incorporation energy from vacuum. We also explain the different creation rates of E ' centers in wet and dry oxides by studying the annihilation mechanism of neutral and charged oxygen vacancies

  20. Study of sputtered ZnO thin films on SiO2 and GaP substrates

    International Nuclear Information System (INIS)

    Brath, T.; Buc, D.; Kovac, J.; Hrnciar, V.; Caplovic, L.

    2011-01-01

    We have investigated n-ZnO polycrystalline thin films prepared on SiO 2 and p-GaP substrate using magnetron sputtering technique. The structural and electrical properties of these structures were studied. The measured parameters give promising results with a possibility to utilize n-ZnO/p-GaP heterostructure for application in the solar cells development especially in the field of nanostructures. The prepared structures will be a subject of further research. (authors)

  1. Volume labeling with Alexa Fluor dyes and surface functionalization of highly sensitive fluorescent silica (SiO2) nanoparticles.

    Science.gov (United States)

    Wang, Wei; Nallathamby, Prakash D; Foster, Carmen M; Morrell-Falvey, Jennifer L; Mortensen, Ninell P; Doktycz, Mitchel J; Gu, Baohua; Retterer, Scott T

    2013-11-07

    A new synthesis approach is described that allows the direct incorporation of fluorescent labels into the volume or body of SiO2 nanoparticles. In this process, fluorescent Alexa Fluor dyes with different emission wavelengths were covalently incorporated into the SiO2 nanoparticles during their formation by the hydrolysis of tetraethoxysilane. The dye molecules were homogeneously distributed throughout the SiO2 nanoparticles. The quantum yields of the Alexa Fluor volume-labeled SiO2 nanoparticles were much higher than nanoparticles labeled using conventional organic dyes. The size of the resulting nanoparticles was controlled using microemulsion reaction media with sizes in the range of 20-100 nm and a polydispersity of <15%. In comparison with conventional surface tagged particles created by post-synthesis modification, this process maintains the physical and surface chemical properties that have the most pronounced effect on colloidal stability and interactions with their surroundings. These volume-labeled nanoparticles have proven to be extremely robust, showing excellent signal strength, negligible photobleaching, and minimal loss of functional organic components. The native or "free" surface of the volume-labeled particles can be altered to achieve a specific surface functionality without altering fluorescence. Their utility was demonstrated for visualizing the association of surface-modified fluorescent particles with cultured macrophages. Differences in particle agglomeration and cell association were clearly associated with differences in observed nanoparticle toxicity. The capacity to maintain particle fluorescence while making significant changes to surface chemistry makes these particles extremely versatile and useful for studies of particle agglomeration, uptake, and transport in environmental and biological systems.

  2. Cellulose Insulation

    Science.gov (United States)

    1980-01-01

    Fire retardant cellulose insulation is produced by shredding old newspapers and treating them with a combination of chemicals. Insulating material is blown into walls and attics to form a fiber layer which blocks the flow of air. All-Weather Insulation's founders asked NASA/UK-TAP to help. They wanted to know what chemicals added to newspaper would produce an insulating material capable of meeting federal specifications. TAP researched the query and furnished extensive information. The information contributed to successful development of the product and helped launch a small business enterprise which is now growing rapidly.

  3. Thermal insulator

    Energy Technology Data Exchange (ETDEWEB)

    Yamamoto, R.; Asada, Y.; Matsuo, Y.; Mikoda, M.

    1985-07-16

    A thermal insulator comprises an expanded resin body having embedded therein an evacuated powder insulation portion which consists of fine powder and a container of film-like plastics or a film-like composite of plastics and metal for enclosing the powder. The resin body has been expanded by a Freon gas as a blowing agent. Since a Freon gas has a larger molecular diameter than the constituent gases of air, it is less likely to permeate through the container than air. Thus present invention provides a novel composite insulator which fully utilizes the benefits of vacuum insulation without necessitating a strong and costly material for a vacuum container.

  4. Defect induced phonon scattering for tuning the lattice thermal conductivity of SiO2 thin films

    Directory of Open Access Journals (Sweden)

    Sen Cao

    2017-01-01

    Full Text Available In this work, the thermal properties of nanoscale SiO2 thin films have been systematically investigated with respect to the thickness, crystal orientations and the void defects using non-equilibrium molecular-dynamics (NEMD simulation. Size effect for the lattice thermal conductivity of nanoscale SiO2 thin films was observed. Additionally, SiO2 thin films with [001] oriented exhibited greater thermal conductivity compared with other crystal orientations which was discussed in terms of phonon density of states (PDOS. Furthermore, the porosity of void defects was introduced to quantify the influence of defects for thermal conductivity. Results exhibited that the thermal conductivity degraded with the increase of porosity. Two thermal conductivity suppression mechanisms, namely, void defects induced material loss interdicting heat conduction and phonon scattering enhanced by the boundary of defects, were proposed. Then, a further simulation was deployed to find that the effect of boundary scattering of defects was dominant in thermal conductivity degradation compared with material loss mechanism. The conclusion suggests that the thermal conductivity could be configured via regulating the distribution of PDOS directly associated with void defects.

  5. Suppressing Structural Colors of Photocatalytic Optical Coatings on Glass: The Critical Role of SiO2.

    Science.gov (United States)

    Li, Ronghua; Boudot, Mickael; Boissière, Cédric; Grosso, David; Faustini, Marco

    2017-04-26

    The appearance of structural colors on coated-glass is a critical esthetical drawback toward industrialization of photocatalytic coatings on windows for architecture or automobile. Herein we describe a rational approach to suppress the structural color of mesoporous TiO 2 -based coatings preserving photoactivity and mechanical stiffness. Addition of SiO 2 as third component is discussed. Ti x Si (1-x) O 2 mesoporous coatings were fabricated by one-step liquid deposition process through the evaporation induced self-assembling and characterized by GI-SAXS, GI-WAXS, electron microscopies, and in situ Environmental Ellipsometry Porosimetry. Guided by optical simulation, we investigated the critical role of SiO 2 on the optical responses of the films but also on the structural, mechanical, and photocatalytic properties, important requirements to go toward real applications. We demonstrate that adding SiO 2 to porous TiO 2 allows tuning and suppression of structural colors through refractive index matching and up to 160% increase in mechanical stiffening of the films. This study leads us to demonstrate an example of "invisible" coating, in which the light reflection is angle- and thickness-independent, and exhibiting high porosity, mechanical stiffness, and photoactivity.

  6. In Vitro Cytotoxicity of Mesoporous SiO2@Eu(OH3 Core-Shell Nanospheres in MCF-7

    Directory of Open Access Journals (Sweden)

    M. Atif

    2016-01-01

    Full Text Available Initially, the sample was synthesized by a modified sol-gel process. Morphological analysis of growth SiO2@Eu(OH3 was confirmed by applying field emission transmission electron microscopy (high and low resolution FETEM. The images confirmed the average diameter of mesoporous SiO2@Eu(OH3 core-shell nanospheres (~392–400 nm with a silica core of ~230 nm in diameter and a shell composed of europium hydroxide ~162 nm (thickness. Moreover, an absorption band at 280 nm was confirmed which initiates from the europium hydroxide. The photoluminescence spectrum of the nanosphere was also recorded at ambient temperature under the excitation of 3.82 eV. Cytotoxic studies in vitro were performed by applying MTT, NR assays, and morphological analysis. Morphological changes and % loss in cellular viability was assessed in human breast cancer cells (MCF-7 labeled with mesoporous SiO2@Eu(OH3 core-shell nanospheres at different concentrations ranging from 10 µg/mL to 200 µg/mL. Current study demonstrates the quite rational strategy which might be useful in future clinical approach/applications.

  7. Preparation, and Luminescence Properties of SiO2@Sm(MABA-Siphen Core-Shell Structure Nanometer Composite

    Directory of Open Access Journals (Sweden)

    Feng Li-Na

    2018-01-01

    Full Text Available A novel ternary samarium complex was prepared using HOOCC6H4N(CONH(CH23Si- (OCH2CH332 (MABA-Si as first ligand, and phen as second ligand. The corresponding SiO2@Sm(MABA-Siphen core-shell structure nanometer composite was synthesized as well, and the silica spheres was the core, and the ternary samarium complex was the shell layer. The ternary samarium complex has been characterized by element analysis, molar conductivity and IR spectra. The results show that the chemical formula of the complex is Sm(MABA-Si(phen2(ClO43·2H2O. The fluorescent spectra illustrat that the luminescence properties of the samarium complex are superior. The core-shell structure of SiO2@Sm(MABA-Siphen nanometer composite is characterized by SEM, TEM and IR spectra. The SiO2@Sm(MABA-Siphen core-shell structure composites exhibit stronger emission intensity than the ternary samarium complex. The fluorescence lifetime of the complex and core-shell structure composite is measured as well.

  8. Binary and Ternary Catalytic Systems for Olefin Metathesis Based on MoCl5/SiO2

    Science.gov (United States)

    Bykov, Victor I.; Belyaev, Boris A.; Butenko, Tamara A.; Finkelshtein, Eugene Sh.

    Kinetics of α-olefin metathesis in the presence of binary (MoCl5/ SiO2-Me4Sn) and ternary catalytic systems (MoCl5/SiO2-Me4Sn-ECl4, E = Si or Ge) was studied. Specifically, kinetics and reactivity of 1-decene, 1-octene, and 1-hexene in the metathesis reaction at 27°C and 50°C in the presence of MoCl5/ SiO2-SnMe4 were examined and evaluated in detail. It was shown that experimental data comply well with the simple kinetic equation for the rate of formation of symmetrical olefins with allowance for the reverse reaction and catalyst deactivation: r = left( {k_1 \\cdot c_α - k_{ - 1} \\cdot c_s } right) \\cdot e^{ - k_d \\cdot tilde n_{tot} } . The coefficients for this equation were determined, and it was shown that these α-olefins had practically the same reactivity. It was found that reactivation in the course of metathesis took place due to the addition of a third component (silicon tetrachloride or germanium tetrachloride in combination with tetramethyltin) to a partially deactivated catalyst. The number of active centers was determined (5-6% of the amount of Mo) and the mechanisms of formation, deactivation, and reactivation were proposed for the binary and ternary catalytic systems. The role of individual components of the catalytic systems was revealed.

  9. Toluene and chlorobenzene dinitration over solid H3PO4/MoO3/SiO2 catalyst

    International Nuclear Information System (INIS)

    Adamiak, Joanna; Kalinowska-Alichnewicz, Dorota; Szadkowski, Michal; Skupinski, Wincenty

    2011-01-01

    Highlights: → A novel catalyst H 3 PO 4 /MoO 3 /SiO 2 was characterized and used in nitration. → On the surface domains of phosphomolybdic acid (HPM) are obtained. → Dinitrotoluene is obtained with very high yield i.e. 96 wt.% in mild conditions. → Dinitrochlorobenzene is obtained with only twelve-fold excess of nitric acid. → It is sulfuric acid free and solvent free nitration of aromatic compounds. - Abstract: A new catalyst, H 3 PO 4 /MoO 3 /SiO 2 , was prepared by modification of MoO 3 /SiO 2 using phosphoric acid. The characterization of the catalyst was performed using Infrared and Raman Spectroscopy, potentiometric titration and nitrogen adsorption-desorption methods. Molybdenum oxides were identified along with phosphomolybdic acid and polymolybdates on the modified surface. The suitability of the catalysts for toluene and chlorobenzene nitration in continuous process was examined. Toluene is effectively nitrated to dinitrotoluene (DNT) in one-stage process (96 wt.% of DNT in the product) and in mild conditions i.e. at room temperature and only with ten-fold excess of nitric acid. In chlorobenzene nitration only twelve-fold excess of nitric acid is needed to obtain as high yield as 95 wt.%. Most importantly, the novel catalysts we have developed, provide the opportunity for sulfuric acid- free nitration of aromatic compounds.

  10. Accessing the application of in situ cosmogenic 14C to surface exposure dating of amorphous SiO2

    Science.gov (United States)

    Cesta, J. M.; Goehring, B. M.; Ward, D. J.

    2017-12-01

    We assess the feasibility and utility of in situ cosmogenic 14C as a geochronometer for landforms composed of amorphous SiO2 through the comparison of 14C surface exposure ages to independently determined eruption ages on Obsidian Dome, California. Landforms composed of amorphous SiO2 phases are difficult to date by conventional cosmogenic nuclide methods due to several complications that may arise (e.g., inability to remove meteoric contamination). The onset of an increased understanding of production rates and analytical measurement of in situ 14C in SiO2 provides an opportunity to address this limitation. Obsidian Dome is a 600-year-old phreatomagmatic dome of the Mono-Inyo Craters located in Inyo County, California, and consists of vesicular pumice, obsidian, and rhyolite. Exposure ages from eight obsidian and banded pumice and obsidian surface samples range from 3947 ± 678 to 914 ± 134 years, all significantly older than the accepted radiocarbon age of 650-550 years. δ13C values for the samples range between +2.65‰ and +1.34‰ and show a negative correlation with CO2 yield. The `too old' exposure ages coupled with this negative correlation between δ13C and CO2 yield suggests the incorporation of an atmospheric component of 14C. Measurement of 14C concentrations in shielded, subsurface samples will assist in isolating the atmospheric 14C component and aid in correcting the surface exposure ages.

  11. Influence of radiation-damages on parameters of lattice oscillations in crystalline and vitreous SiO2

    International Nuclear Information System (INIS)

    Abdukadyrova, I.Kh.

    2008-01-01

    Using IR reflection spectroscopy, the influence of radiation-induced disturbances on a number of parameters of lattice oscillations in two SiO 2 modifications was investigated. Radiation kinetics of changes in spectral characteristics of fundamental oscillations in SiO 2 crystalline and glassy states was determined. Dose dependences of both reflectivity and degenerate mode vibrational frequency were found to show minima whose locations were governed by a type of a sample. Under higher doses of neutron radiation (10 21 cm -2 ), certain characteristics of bands were observed to be of the same values for the both materials modified. The features of radiation kinetics were found for dynamic parameters of the samples. It was deduced that specific character of radiation-induced changes observed in spectral and dynamic parameters of oscillations in the region of degenerate modes was due to both the accumulation of radiation damages and a change in the force field surrounding bridge-type bonds which was related with the change in the SiO 2 structure. (authors)

  12. A sensitive electrochemical sensor for determination of gallic acid based on SiO2 nanoparticle modified carbon paste electrode.

    Science.gov (United States)

    Tashkhourian, J; Nami-Ana, S F

    2015-01-01

    Gallic acid (GA), one of the main phenolic components, has been a subject of increasing interest due to their biological properties, including anti-inflammatory, antihistaminic, and antitumor activities, scavenging of free radicals, and protecting against cardiovascular diseases. Therefore, developing sensitive and selective sensor for GA is very important and interesting. Herein, SiO2 nanoparticles were synthesized and then used to prepare a modified carbon paste electrode (CPE) for determination of GA. For better comparison, multiwalled carbon nanotubes (MWCNTs) and graphite were also employed to prepare an electrochemical sensor for determination of GA. The electrochemical behaviors of GA at different electrochemical sensors were investigated. Compared with other sensors, the SiO2 nanoparticle sensor greatly enhances the response signal of GA due to the large active surface area and high accumulation efficiency. Voltammetric studies show that the SiO2 nanoparticle modified carbon paste electrode is sensitive to GA in the concentration range of 8.0 × 10(-7) to 1.0 × 10(-4) mol L(-1), and the limit of detection and sensitivity were calculated as 2.5 × 10(-7) mol L(-1) and 1790.7 (μA/mM), respectively. Finally, the proposed electrochemical sensor was successfully employed to determine GA in tea and orange juice samples. Copyright © 2015. Published by Elsevier B.V.

  13. Fixed-bed adsorption separation of xylene isomers over sio2/silicallite-1 core-shell adsorbents

    KAUST Repository

    Khan, Easir A.

    2013-12-29

    SiO2/Silicalite-1 core-shell material has been demonstrated as potential shape selective adsorbent in gas phase separation of p-xylene from a mixture of p/o-xylene isomers. The core-shell composite comprised of large silica core and thin polycrystalline silicalite-1 shell which was synthesized via a self-assembly of silicalite-1 nanocrystals on core silica surface followed by a secondary seeded growth method. The core materials, SiO2 used in this study has mesoporosity with an average pore diameter of 60Å and hence offers no shape selectivity for xylene isomers. However, the shell, silicalite-1 contains rigid pore structures and preferentially adsorbs p-xylene from their isomers mixtures. A series of adsorption fixed bed breakthrough adsorption/desorption experiment was performed to obtain the equilibrium isotherms and adsorption isotherm parameters of xylene isomers. The equilibrium isotherms of xylene isomers follow the Langmuir\\'s model. A chromatographic adsorption model has been used to describe the fixed-bed breakthrough profiles of xylene isomers. The model has successfully predicted the responses of the binary mixtures of p/o-xylene isomers. The SiO2/silicalite-1 core-shell adsorbents have shown para-selectivity as high as 15. © Bangladesh Uni. of Engg. & Tech.

  14. Synthesis and Luminescence Properties of Yellow-emitting SiO2/Zn2SiO4: Mn Nanocomposite

    Directory of Open Access Journals (Sweden)

    Karim OMRI

    2014-05-01

    Full Text Available Yellow light emitting Mn2+-doped b-Zn2SiO4 phosphor nanoparticles embedded in SiO2 host matrix, were prepared by a simple solid-phase reaction under natural atmosphere at 1500 °C for 2 hours after the incorporation of manganese doped zinc oxide nanoparticles in silica using sol-gel method. The SiO2/Zn2SiO4:Mn nanocomposite was characterized by X-ray diffraction (XRD, transmission electron microscopy (TEM, scanning electron microscopy (SEM and photoluminescence (PL. The nanopowder was crystallized in triclinic b-Zn2SiO4 phase with a particles size varies between 70 nm and 84 nm. The SiO2/b-Zn2SiO4:Mn nanocomposite exhibited a broad yellow emission band at 575 nm under UV excitation light. The dependence of the intensity and energy position of the obtained PL band on measurement temperature and power excitation will be discussed.

  15. HfO2/SiO2 multilayer based reflective and transmissive optics from the IR to the UV

    Science.gov (United States)

    Wang, Jue; Hart, Gary A.; Oudard, Jean Francois; Wamboldt, Leonard; Roy, Brian P.

    2016-05-01

    HfO2/SiO2 multilayer based reflective optics enable threat detection in the short-wave/middle-wave infrared and high power laser targeting capability in the near infrared. On the other hand, HfO2/SiO2 multilayer based transmissive optics empower early missile warning by taking advantage of the extremely low noise light detection in the deep-ultraviolet region where solar irradiation is strongly absorbed by the ozone layer of the earth's atmosphere. The former requires high laser damage resistance, whereas the latter needs a solar-blind property, i.e., high transmission of the radiation below 290 nm and strong suppression of the solar background from 300 nm above. The technical challenges in both cases are revealed. The spectral limits associated with the HfO2 and SiO2 films are discussed and design concepts are schematically illustrated. Spectral performances are realized for potential A and D and commercial applications.

  16. Functionalized magnetic core-shell Fe3O4@SiO2 nanoparticles for sensitive detection and removal of Hg2+

    Science.gov (United States)

    Xu, Yaohui; Zhou, Yang; Ma, Wenhui; Wang, Shixing; Li, Shaoyuan

    2013-06-01

    The Fe3O4 nanoparticles [NPs] coated with silica nanoparticles were designed and prepared, the obtained Fe3O4@SiO2 NPs have uniform spherical morphology with a mean diameter of about 22 nm. The inert silica coating on the surface of Fe3O4 NPs not only significantly prevented their aggregation in solution but also improved their chemical stability and provided wider sites for surface modification with organic chemosensors. Subsequently an attempt had been made that the as-synthesized Fe3O4@SiO2 NPs were modified by N-(rhodamine-6G) lactam-ethylenediamine, the functionalized magnetic Fe3O4@SiO2 NPs (Fe3O4@SiO2-Rho) served as a "naked eye" fluorescent sensor to detect Hg2+. The Fe3O4@SiO2-Rho NPs exhibited selective "turn-on" type fluorescent change from colorless to orange when adding to Hg2+. In addition, the adsorption experiments revealed that the Fe3O4@SiO2-Rho NPs had effective removal toward Hg2+. Moreover, the functionalized Fe3O4@SiO2 microspheres displayed superparamagnetic properties, which made it easier to separate the nanocomposites from the liquid phase by adding an external magnetic field. Our efforts provided a potential magnetic nanomaterial for sensitive detection and removal toward Hg2+ simultaneously.

  17. Preparation of SiO2-Capped Sr2MgSi2O7:Eu,Dy Nanoparticles with Laser Ablation in Liquid

    Directory of Open Access Journals (Sweden)

    Mika Ishizaki

    2012-01-01

    Full Text Available The effect of SiO2 capping on the optical properties of nanoparticles was investigated. The photoluminescence (PL intensity was successfully improved by SiO2-capping. Sr2MgSi2O7:Eu,Dy nanoparticles were prepared by laser ablation in liquid. The SiO2 capping was performed using the Stöber method with ultrasonication. The TEM images indicated that the Sr2MgSi2O7:Eu,Dy nanocrystal was capped with amorphous SiO2, and the shape of the completely capped nanoparticle was an elliptical nanorod, which aggregated after a long SiO2 capping reaction time. The peak wavelength and the shape of the PL spectra were not changed by the pelletization and the laser ablation in liquid. The PL intensity of SiO2 capped nanoparticles was significantly increased. Nonradiative relaxation via surface defects and energy transfer to water molecules decrease the PL intensity. These phenomena accelerate in the case of nanoparticles. SiO2 capping would prevent these phenomena and improve the optical properties of nanoparticles. The combination of laser ablation in liquid and the chemical reaction is important to expand the applications of this method in various research fields.

  18. Vancomycin-modified Fe3O4@SiO2@Ag microflowers as effective antimicrobial agents

    Directory of Open Access Journals (Sweden)

    Wang C

    2017-04-01

    Full Text Available Chongwen Wang,1,2,* Kehan Zhang,2,* Zhe Zhou,2,* Qingjun Li,2 Liting Shao,2 Rong Zhang Hao,3 Rui Xiao,2 Shengqi Wang1,2 1College of Life Sciences & Bio-Engineering, Beijing University of Technology, 2Beijing Key Laboratory of New Molecular Diagnosis Technologies for Infectious Diseases, Beijing Institute of Radiation Medicine, Beijing, 3Institute for Disease Control and Prevention, Academy of Military Medical Sciences, Beijing, People’s Republic of China *These authors contributed equally to this work Abstract: Nanomaterials combined with antibiotics exhibit synergistic effects and have gained increasing interest as promising antimicrobial agents. In this study, vancomycin-modified magnetic-based silver microflowers (Van/Fe3O4@SiO2@Ag microflowers were rationally designed and prepared to achieve strong bactericidal ability, a wide antimicrobial spectrum, and good recyclability. High-performance Fe3O4@SiO2@Ag microflowers served as a multifunction-supporting matrix and exhibited sufficient magnetic response property due to their 200 nm Fe3O4 core. The microflowers also possessed a highly branched flower-like Ag shell that provided a large surface area for effective Ag ion release and bacterial contact. The modified-vancomycin layer was effectively bound to the cell wall of bacteria to increase the permeability of the cell membrane and facilitate the entry of the Ag ions into the bacterium, resulting in cell death. As such, the fabricated Van/Fe3O4@SiO2@Ag microflowers were predicted to be an effective and environment-friendly antibacterial agent. This hypothesis was verified through sterilization of Gram-negative Escherichia coli and Gram-positive methicillin-resistant Staphylococcus aureus, with minimum inhibitory concentrations of 10 and 20 µg mL-1, respectively. The microflowers also showed enhanced effect compared with bare Fe3O4@SiO2@Ag microflowers and free-form vancomycin, confirming the synergistic effects of the combination of the two components. Moreover, the antimicrobial effect was maintained at more than 90% after five cycling assays, indicating the high stability of the product. These findings reveal that Van/Fe3O4@SiO2@Ag microflowers exhibit promising applications in the antibacterial fields. Keywords: antibiotic-resistant bacteria, surface area, biological properties, magnetic composites, Ag shell

  19. Radiation Damage in the Silicon Dioxide (SiO2) Layer

    International Nuclear Information System (INIS)

    Chee, F.P.; Saafie Salleh; Afishah Alias

    2015-01-01

    The most sensitive part of a metal-oxide-semiconductor (MOS) structure to ionizing radiation is the oxide insulating layer. When ionizing radiation passes through the oxide, the energy deposited creates electron/ hole pairs. Oxide trapped charge cause a negative shift in capacitance-voltage (C-V) characteristics. These changes are the results of firstly, increasing trapped positive charge in the oxide, which causes a parallel shift of the curve to more negative voltages, and secondly increasing interface trap density, which causes the curve to stretch out. (author)

  20. Improving antiproliferative effect of the anticancer drug cytarabine on human promyelocytic leukemia cells by coating on Fe3O4@SiO2 nanoparticles.

    Science.gov (United States)

    Shahabadi, Nahid; Falsafi, Monireh; Mansouri, Kamran

    2016-05-01

    In this study, Fe3O4@SiO2-cytarabine magnetic nanoparticles (MNPs) were prepared via chemical coprecipitation reaction and coating silica on the surface of Fe3O4 MNPs by Stöber method via sol-gel process. The surface of Fe3O4@SiO2 MNPs was modified by an anticancer drug, cytarabine. The structural properties of the samples were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), Zetasizer analyzer, and transmission electron microscopy (TEM). The results indicated that the crystalline phase of iron oxide NPs was magnetite (Fe3O4) and the average sizes of Fe3O4@SiO2-cytarabine MNPs were about 23 nm. Also, the surface characterization of Fe3O4@SiO2-cytarabine MNPs by FT-IR showed that successful coating of Fe3O4 NPs with SiO2 and binding of cytarabine drug onto the surface of Fe3O4@SiO2 MNPs were through the hydroxyl groups of the drug. The in vitro cytotoxic activity of Fe3O4@SiO2-cytarabine MNPs was investigated against cancer cell line (HL60) in comparison with cytarabine using MTT colorimetric assay. The obtained results showed that the effect of Fe3O4@SiO2-cytarabine magnetic nanoparticles on the cell lines were about two orders of magnitude higher than that of cytarabine. Furthermore, in vitro DNA binding studies were investigated by UV-vis, circular dichroism, and fluorescence spectroscopy. The results for DNA binding illustrated that DNA aggregated on Fe3O4@SiO2-cytarabine MNPs via groove binding. Copyright © 2016 Elsevier B.V. All rights reserved.

  1. Water Sorption in Electron-Beam Evaporated SiO2 on QCM Crystals and Its Influence on Polymer Thin Film Hydration Measurements.

    Science.gov (United States)

    Kushner, Douglas I; Hickner, Michael A

    2017-05-30

    Spectroscopic ellipsometry (SE) and quartz crystal microbalance (QCM) measurements are two critical characterization techniques routinely employed for hydration studies of polymer thin films. Water uptake by thin polymer films is an important area of study to investigate antifouling surfaces, to probe the swelling of thin water-containing ionomer films, and to conduct fundamental studies of polymer brush hydration and swelling. SiO 2 -coated QCM crystals, employed as substrates in many of these hydration studies, show porosity in the thin electron-beam (e-beam) evaporated SiO 2 layer. The water sorption into this porous SiO 2 layer requires correction of the optical and mass characterization of the hydrated polymer due to changes in the SiO 2 layer as it sorbs water. This correction is especially important when experiments on SiO 2 -coated QCM crystals are compared to measurements on Si wafers with dense native SiO 2 layers. Water adsorption filling void space during hydration in ∼200-260 nm thick SiO 2 layers deposited on a QCM crystal resulted in increased refractive index of the layer during water uptake experiments. The increased refractive index led to artificially higher polymer swelling in the optical modeling of the hydration experiments. The SiO 2 -coated QCM crystals showed between 6 and 8% void as measured by QCM and SE, accounting for 60%-85% of the measured polymer swelling in the low humidity regime (70% RH) from optical modeling for 105 and 47 nm thick sulfonated polymer films. Correcting the refractive index of the SiO 2 layer for its water content resulted in polymer swelling that successfully resembled swelling measured on a silicon wafer with nonporous native oxide.

  2. Effects of Bias Pulsing on Etching of SiO2 Pattern in Capacitively-Coupled Plasmas for Nano-Scale Patterning of Multi-Level Hard Masks.

    Science.gov (United States)

    Kim, Sechan; Choi, Gyuhyun; Chae, Heeyeop; Lee, Nae-Eung

    2016-05-01

    In order to study the effects of bias pulsing on the etching characteristics of a silicon dioxide (SiO2) layer using multi-level hard mask (MLHM) structures of ArF photoresist/bottom anti-reflected coating/SiO2/amorphous carbon layer (ACL)/SiO2, the effects of bias pulsing conditions on the etch characteristics of a SiO2 layer with an ACL mask pattern in C4F8/CH2F2/O2/Ar etch chemistries were investigated in a dual-frequency capacitively-coupled plasma (CCP) etcher. The effects of the pulse frequency, duty ratio, and pulse-bias power in the 2 MHz low-frequency (LF) power source were investigated in plasmas generated by a 27.12 MHz high-frequency (HF) power source. The etch rates of ACL and SiO2 decreased, but the etch selectivity of SiO2/ACL increased with decreasing duty ratio. When the ACL and SiO2 layers were etched with increasing pulse frequency, no significant change was observed in the etch rates and etch selectivity. With increasing LF pulse-bias power, the etch rate of ACL and SiO2 slightly increased, but the etch selectivity of SiO2/ACL decreased. Also, the precise control of the critical dimension (CD) values with decreasing duty ratio can be explained by the protection of sidewall etching of SiO2 by increased passivation. Pulse-biased etching was successfully applied to the patterning of the nano-scale line and space of SiO2 using an ACL pattern.

  3. Design of flexible PANI-coated CuO-TiO2-SiO2 heterostructure nanofibers with high ammonia sensing response values

    Science.gov (United States)

    Pang, Zengyuan; Nie, Qingxin; Lv, Pengfei; Yu, Jian; Huang, Fenglin; Wei, Qufu

    2017-06-01

    We report a room-temperature ammonia sensor with extra high response values and ideal flexibility, including polyaniline (PANI)-coated titanium dioxide-silicon dioxide (TiO2-SiO2) or copper oxide-titanium dioxide-silicon dioxide (CuO-TiO2-SiO2) composite nanofibers. Such flexible inorganic TiO2-SiO2 and CuO-TiO2-SiO2 composite nanofibers were prepared by electrospinning, followed by calcination. Then, in situ polymerization of aniline monomers was carried out with inorganic TiO2-SiO2 and CuO-TiO2-SiO2 composite nanofibers as templates. Gas sensing tests at room temperature indicated that the obtained CuO-TiO2-SiO2/PANI composite nanofibers had much higher response values to ammonia gas (ca. 45.67-100 ppm) than most of those reported before as well as the prepared TiO2-SiO2/PANI composite nanofibers here. These excellent sensing properties may be due to the P-N, P-P heterojunctions and a structure similar to field-effect transistors formed on the interfaces between PANI, TiO2, and CuO, which is p-type, n-type, and p-type semiconductor, respectively. In addition, the prepared free-standing CuO-TiO2-SiO2/PANI composite nanofiber membrane was easy to handle and possessed ideal flexibility, which is promising for potential applications in wearable sensors in the future.

  4. Thermal insulation

    International Nuclear Information System (INIS)

    Pinsky, G.P.

    1977-01-01

    Thermal insulation for vessels and piping within the reactor containment area of nuclear power plants is disclosed. The thermal insulation of this invention can be readily removed and replaced from the vessels and piping for inservice inspection, can withstand repeated wettings and dryings, and can resist high temperatures for long periods of time. 4 claims, 3 figures

  5. [MG49-LiClO4]:[TiO2-SiO2] Polymer Electrolytes: In Situ Preparation and Characterization

    Directory of Open Access Journals (Sweden)

    Oon Lee Kang

    2016-01-01

    Full Text Available In the present research, [MG49-LiClO4]:[HNO3-THF/TiO2-SiO2] and [MG49-LiClO4]:[ClHNO2-THF/TiO2-SiO2] polymer electrolytes were first prepared through simple stepwise in situ techniques: sol-gel technique and solution-cast technique. [MG49-LiClO4]:[HNO3-THF/TiO2-SiO2] and [MG49-LiClO4]:[ClHNO2-THF/TiO2-SiO2] polymer electrolytes were then characterized through different experimental techniques. [MG49-LiClO4]:[HNO3-THF/TiO2-SiO2] and [MG49-LiClO4]:[ClHNO2-THF/TiO2-SiO2] polymer electrolytes had exhibited significant structural changes upon different salt concentrations. In the present investigation, [MG49-LiClO4]:[HNO3-THF/TiO2-SiO2] and [MG49-LiClO4]:[ClHNO2-THF/TiO2-SiO2] polymer electrolytes had attained maximum ionic conductivities (σ~10-7 S/cm at ambient temperature; 10−4 S/cm at 100°C upon 25 wt.% salt insertion. [MG49-LiClO4]:[HNO3-THF/TiO2-SiO2] and [MG49-LiClO4]:[ClHNO2-THF/TiO2-SiO2] polymer electrolytes had exhibited distinct conduction mechanisms in similar experimental configuration. [MG49-LiClO4]:[HNO3-THF/TiO2-SiO2] and [MG49-LiClO4]:[ClHNO2-THF/TiO2-SiO2] polymer electrolytes had exhibited different stability characteristics over certain operational condition.

  6. Optical Properties of Malachite Green Dye Doped SiO2 Glasses: Effect of Transition Metal (Fe-I Used as a Codopant

    Directory of Open Access Journals (Sweden)

    Dulen Bora

    2014-01-01

    Full Text Available Enhanced luminescence properties of Malachite Green (MG (oxalate in Fe-MG codoped SiO2 glasses compared to its values in MG doped SiO2 glasses are reported here. The enhancement is chiefly attributed to a resonance nonradiative energy transfer between Fe and MG. The quantum yield of Malachite Green (MG, in presence of Iron, trapped in sol-gel derived SiO2 glass increases by an order of ~103 compared to that in low viscous solvent while a lifetime of 3.29 ns is reported.

  7. Formyl-peptide Receptor Agonists and Amorphous SiO2-NPs Synergistically and Selectively Increase the Inflammatory Responses of Human Monocytes and PMNs

    Directory of Open Access Journals (Sweden)

    Regina Tavano

    2016-02-01

    ligands, but not toward FPR2-specific ones. Conversely, the chemotaxis of monocytes toward FPR2-specific peptides was inhibited by SiO2-NPs. NADPH-oxidase activation triggered by FPR1- and FPR2-specific ligands in both cell types was not altered by SiO2-NPs. Microbial and tissue danger signals sensed by FPRs selectively amplified the functional responses of monocytes and PMNS to SiO2-NPs, and should be carefully considered in the assessment of the risk associated with nanoparticle exposure.

  8. A Nonvolatile MOSFET Memory Device Based on Mobile Protons in SiO(2) Thin Films

    Energy Technology Data Exchange (ETDEWEB)

    Vanheusden, K.; Warren, W.L.; Devine, R.A.B.; Fleetwood, D.M.; Draper, B.L.; Schwank, J.R.

    1999-03-02

    It is shown how mobile H{sup +} ions can be generated thermally inside the oxide layer of Si/SiO{sub 2}/Si structures. The technique involves only standard silicon processing steps: the nonvolatile field effect transistor (NVFET) is based on a standard MOSFET with thermally grown SiO{sub 2} capped with a poly-silicon layer. The capped thermal oxide receives an anneal at {approximately}1100 C that enables the incorporation of the mobile protons into the gate oxide. The introduction of the protons is achieved by a subsequent 500-800 C anneal in a hydrogen-containing ambient, such as forming gas (N{sub 2}:H{sub 2} 95:5). The mobile protons are stable and entrapped inside the oxide layer, and unlike alkali ions, their space-charge distribution can be controlled and rapidly rearranged at room temperature by an applied electric field. Using this principle, a standard MOS transistor can be converted into a nonvolatile memory transistor that can be switched between normally on and normally off. Switching speed, retention, endurance, and radiation tolerance data are presented showing that this non-volatile memory technology can be competitive with existing Si-based non-volatile memory technologies such as the floating gate technologies (e.g. Flash memory).

  9. Linear gate

    International Nuclear Information System (INIS)

    Suwono.

    1978-01-01

    A linear gate providing a variable gate duration from 0,40μsec to 4μsec was developed. The electronic circuity consists of a linear circuit and an enable circuit. The input signal can be either unipolar or bipolar. If the input signal is bipolar, the negative portion will be filtered. The operation of the linear gate is controlled by the application of a positive enable pulse. (author)

  10. Síntese e caracterização de nanocompósitos Ni: SiO2 processados na forma de filmes finos Synthesis and characterization of Ni: SiO2 nanocomposites processed as thin films

    Directory of Open Access Journals (Sweden)

    Paulo Sérgio Gouveia

    2005-10-01

    Full Text Available We have produced nanocomposite films of Ni:SiO2 by an alternative polymeric precursor route. Films, with thickness of ~ 1000 nm, were characterized by several techniques including X-ray diffraction, scanning electron microscopy, atomic force microscopy, flame absorption atomic spectrometry, and dc magnetization. Results from the microstructural characterizations indicated that metallic Ni-nanoparticles with average diameter of ~ 3 nm are homogeneously distributed in an amorphous SiO2 matrix. Magnetization measurements revealed a blocking temperature T B ~ 7 K for the most diluted sample and the absence of an exchange bias suggesting that Ni nanoparticles are free from an oxide layer.

  11. Synthesis and characterization of erbium-doped SiO2 nanoparticles fabricated by using reverse micelle and sol-gel processing

    International Nuclear Information System (INIS)

    Park, Hoyyul; Bae, Dongsik

    2012-01-01

    Erbium-doped SiO 2 nanoparticles have been synthesized using a reverse micelle technique combined with metal-alkoxide hydrolysis and condensation. The sizes and the morphologies of the erbium-doped SiO 2 nanoparticles could be changed by varying the molar ratio of water to surfactant. The sizes and the morphologies of the erbium-doped SiO 2 nanoparticles were examined by using a transmission electron microscope. The average size of synthesized erbium-doped SiO 2 nanoparticles was approximately 20 - 25 nm and that of the erbium particles was 3 - 5 nm. The effects of the synthesis parameters, such as the molar ratio of water to surfactant, are discussed.

  12. Synthesis of polystyrene core/SiO2 shell composite particles and fabrication of SiO2 capsules out of them

    International Nuclear Information System (INIS)

    Terekhin, V

    2017-01-01

    Systemic studies on the dependence of the morphology of polystyrene core/SiO 2 shell composite particles on the conditions of their fabrication have been performed. Spherical polystyrene particles synthesized in the presence of a cationic initiator of polymerization were used as cores. SiO 2 shells were formed by modified Stober’s method. Exposure of the synthesized composite particles to high temperatures has been shown to cause destruction of their polystyrene core, thereby allowing the formation of mesoporous SiO 2 capsules with a mean pore diameter of ∼3 nm and specific surface area of ∼270 m 2 /g. Model experiments on loading the SiO 2 capsules with amoxicillin have been carried out. Spectrophotometry in the UV and visible spectral regions has been used to estimate the kinetics of amoxicillin release from the SiO 2 capsules. (paper)

  13. Ag-Decorated Fe3O4@SiO2 Nanorods: Synthesis, Characterization, and Applications in Degradation of Organic Dyes

    Directory of Open Access Journals (Sweden)

    Chao Li

    2016-01-01

    Full Text Available Well-dispersed Ag nanoparticles (NPs are successfully decorated on Fe3O4@SiO2 nanorods (NRs via a facile step-by-step strategy. This method involves coating α-Fe2O3 NRs with uniform silica layer, reduction in 10% H2/Ar atmosphere at 450°C to obtain Fe3O4@SiO2 NRs, and then depositing Ag NPs on the surface of Fe3O4@SiO2 NRs through a sonochemical step. It was found that the as-prepared Ag-decorated magnetic Fe3O4@SiO2 NRs (Ag-MNRs exhibited a higher catalytic efficiency than bare Ag NPs in the degradation of organic dye and could be easily recovered by convenient magnetic separation, which show great application potential for environmental protection applications.

  14. Marrying the mussel inspired chemistry and Kabachnik-Fields reaction for preparation of SiO2 polymer composites and enhancement removal of methylene blue

    Science.gov (United States)

    Huang, Qiang; Liu, Meiying; Chen, Junyu; Wan, Qing; Tian, Jianwen; Huang, Long; Jiang, Ruming; Deng, Fengjie; Wen, Yuanqing; Zhang, Xiaoyong; Wei, Yen

    2017-11-01

    The removal of organic dyes using functionalization SiO2 composites (denoted as SiO2-PDA-CSH) were prepared via a facile method that combined with mussel inspired chemistry and Kabachnik-Fields (KF) reaction. The size and surface morphology, chemical structure, thermal stability, surface charging property, and elemental composition were evaluated by means of transmission electron microscope (TEM), Fourier transform infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA), zeta potential, and X-ray photoelectron spectroscopy (XPS), respectively. The results demonstrated that the organic functional groups can be successfully introduced onto the surface of SiO2 microspheres through the combination of mussel inspired chemistry and KF reaction. The removal of cationic dye methylene blue (MB) by the raw SiO2 and SiO2-PDA-CSH composites was examined and compared using a series of batch adsorption experiments. The results suggested that SiO2-PDA-CSH composites had a 3-fold increase in the adsorption capacity towards MB than that of pure SiO2 microspheres and the adsorption process was dependent on the solution pH. According to the adsorption kinetics, the adsorption of MB onto SiO2-PDA-CSH composites was well described by pseudo-second-order kinetic model. The equilibrium data were fitted with Langmuir and Freundlich isotherm models with R2 = 0.9981 and R2 = 0.9982, respectively. The maximum adsorption capacity from Langmuir isotherm was found to be 688.85 mg/g. The adsorption thermodynamics was also investigated in detailed. The parameters revealed that the adsorption process was spontaneous and endothermic in nature. The adsorption mechanism might be the synergistic action of physical adsorption of SiO2-PDA-CSH particles and electrostatic interaction between the MB and functional groups on the surface of SiO2-PDA-CSH composites, including sulfydryl, amino, aromatic moieties, and phosphate groups. Taken together, we developed a novel and facile strategy for the surface modification of SiO2 to achieve high adsorption towards MB based on the mussel inspired chemistry and multicomponent KF reaction. More importantly, this strategy could be easily extended for fabrication of many other high efficient adsorbents due to the universality of mussel inspired chemistry and various multicomponent reactions based on amino groups. Therefore, this work will open a new avenue and direction for the environmental applications of mussel inspired chemistry.

  15. Activation of stress-related signalling pathway in human cells upon SiO2 nanoparticles exposure as an early indicator of cytotoxicity

    LENUS (Irish Health Repository)

    Mohamed, Bashir M

    2011-07-29

    Abstract Background Nanomaterials such as SiO2 nanoparticles (SiO2NP) are finding increasing applications in the biomedical and biotechnological fields such as disease diagnostics, imaging, drug delivery, food, cosmetics and biosensors development. Thus, a mechanistic and systematic evaluation of the potential biological and toxic effects of SiO2NP becomes crucial in order to assess their complete safe applicability limits. Results In this study, human monocytic leukemia cell line THP-1 and human alveolar epithelial cell line A549 were exposed to a range of amorphous SiO2NP of various sizes and concentrations (0.01, 0.1 and 0.5 mg\\/ml). Key biological indicators of cellular functions including cell population density, cellular morphology, membrane permeability, lysosomal mass\\/pH and activation of transcription factor-2 (ATF-2) were evaluated utilizing quantitative high content screening (HCS) approach and biochemical techniques. Despite the use of extremely high nanoparticle concentrations, our findings showed a low degree of cytotoxicity within the panel of SiO2NP investigated. However, at these concentrations, we observed the onset of stress-related cellular response induced by SiO2NP. Interestingly, cells exposed to alumina-coated SiO2NP showed low level, and in some cases complete absence, of stress response and this was consistent up to the highest dose of 0.5 mg\\/ml. Conclusions The present study demonstrates and highlights the importance of subtle biological changes downstream of primary membrane and endocytosis-associated phenomena resulting from high dose SiO2NP exposure. Increased activation of transcription factors, such as ATF-2, was quantitatively assessed as a function of i) human cell line specific stress-response, ii) SiO2NP size and iii) concentration. Despite the low level of cytotoxicity detected for the amorphous SiO2NP investigated, these findings prompt an in-depth focus for future SiO2NP-cell\\/tissue investigations based on the combined analysis of more subtle signalling pathways associated with accumulation mechanisms, which is essential for establishing the bio-safety of existing and new nanomaterials.

  16. Activation of stress-related signalling pathway in human cells upon SiO2 nanoparticles exposure as an early indicator of cytotoxicity

    Directory of Open Access Journals (Sweden)

    Mohamed Bashir

    2011-07-01

    Full Text Available Abstract Background Nanomaterials such as SiO2 nanoparticles (SiO2NP are finding increasing applications in the biomedical and biotechnological fields such as disease diagnostics, imaging, drug delivery, food, cosmetics and biosensors development. Thus, a mechanistic and systematic evaluation of the potential biological and toxic effects of SiO2NP becomes crucial in order to assess their complete safe applicability limits. Results In this study, human monocytic leukemia cell line THP-1 and human alveolar epithelial cell line A549 were exposed to a range of amorphous SiO2NP of various sizes and concentrations (0.01, 0.1 and 0.5 mg/ml. Key biological indicators of cellular functions including cell population density, cellular morphology, membrane permeability, lysosomal mass/pH and activation of transcription factor-2 (ATF-2 were evaluated utilizing quantitative high content screening (HCS approach and biochemical techniques. Despite the use of extremely high nanoparticle concentrations, our findings showed a low degree of cytotoxicity within the panel of SiO2NP investigated. However, at these concentrations, we observed the onset of stress-related cellular response induced by SiO2NP. Interestingly, cells exposed to alumina-coated SiO2NP showed low level, and in some cases complete absence, of stress response and this was consistent up to the highest dose of 0.5 mg/ml. Conclusions The present study demonstrates and highlights the importance of subtle biological changes downstream of primary membrane and endocytosis-associated phenomena resulting from high dose SiO2NP exposure. Increased activation of transcription factors, such as ATF-2, was quantitatively assessed as a function of i human cell line specific stress-response, ii SiO2NP size and iii concentration. Despite the low level of cytotoxicity detected for the amorphous SiO2NP investigated, these findings prompt an in-depth focus for future SiO2NP-cell/tissue investigations based on the combined analysis of more subtle signalling pathways associated with accumulation mechanisms, which is essential for establishing the bio-safety of existing and new nanomaterials.

  17. Deposition and characterization of binary Al2O3/SiO2 coating layers on the surfaces of rutile TiO2 and the pigmentary properties

    International Nuclear Information System (INIS)

    Zhang Yunsheng; Yin Hengbo; Wang Aili; Ren Min; Gu Zhuomin; Liu Yumin; Shen Yutang; Yu Longbao; Jiang Tingshun

    2010-01-01

    Binary Al 2 O 3 /SiO 2 -coated rutile TiO 2 composites were prepared by a liquid-phase deposition method starting from Na 2 SiO 3 .9H 2 O and NaAlO 2 . The chemical structure and morphology of binary Al 2 O 3 /SiO 2 coating layers were investigated by Fourier transform infrared spectroscopy, X-ray photoelectron spectroscopy, TG-DSC, Zeta potential, powder X-ray diffraction, and transmission electron microscopy techniques. Binary Al 2 O 3 /SiO 2 coating layers both in amorphous phase were formed at TiO 2 surfaces. The silica coating layers were anchored at TiO 2 surfaces via Si-O-Ti bonds and the alumina coating layers were probably anchored at the SiO 2 -coated TiO 2 surfaces via Al-O-Si bonds. The formation of continuous and dense binary Al 2 O 3 /SiO 2 coating layers depended on the pH value of reaction solution and the alumina loading. The binary Al 2 O 3 /SiO 2 -coated TiO 2 composites had a high dispersibility in water. The whiteness and brightness of the binary Al 2 O 3 /SiO 2 -coated TiO 2 composites were higher than those of the naked rutile TiO 2 and the SiO 2 -coated TiO 2 samples. The relative light scattering index was found to depend on the composition of coating layers.

  18. The influence of Pr3+ co-doping on the photoluminescence and cathodoluminescence properties of SiO2:Eu3+/Tb3+

    CSIR Research Space (South Africa)

    Mhlongo, GH

    2011-07-01

    Full Text Available Tb3+-Pr3+, and Eu3+-Pr3+ ion pairs co-doped in a SiO2 matrix were prepared by a sol-gel method. Co-doping of Eu3+ and Tb3+ ions with Pr3+ in SiO2 resulted in the quenching of Eu3+ and Tb3+ emissions with increasing Pr3+ concentrations. The quenching...

  19. Synthesis of magnetically recyclable ZIF-8@SiO2@Fe3O4 catalysts and their catalytic performance for Knoevenagel reaction

    International Nuclear Information System (INIS)

    Li, Qingyuan; Jiang, Sai; Ji, Shengfu; Ammar, Muhammad; Zhang, Qingmin; Yan, Junlei

    2015-01-01

    Novel magnetic ZIF-8@SiO 2 @Fe 3 O 4 catalysts were synthesized by encapsulating magnetic SiO 2 @Fe 3 O 4 nanoparticles into ZIF-8 through in situ method. The structures of the catalysts were characterized by TEM, SEM, XRD, FT-IR, VSM, N 2 adsorption/desorption and CO 2 -TPD technology. The catalytic activity and recovery properties of the catalysts for the Knoevenagel reaction of p-chlorobenzaldehyde with malononitrile were evaluated. The results showed that the magnetic ZIF-8@SiO 2 @Fe 3 O 4 catalysts had the larger surface areas, the suitable superparamagnetism, and good catalytic activity for Knoevenagel reaction. The conversion of p-chlorobenzaldehyde can reach ~98% and the selectivity of the production can reach ~99% over35.8%ZIF-8@SiO 2 @Fe 3 O 4 (MZC-5) catalyst under the reaction condition of 25 °C and 4 h. The magnetic ZIF-8@SiO 2 @Fe 3 O 4 catalysts also had good substrates adaptation. After reaction, the catalyst can be easily separated from the reaction mixture by an external magnet. The recovery catalyst can be reused five times and the conversion of p-chlorobenzaldehyde can be kept over 90%. - Graphical abstract: Novel magnetically recyclable ZIF-8@SiO 2 @Fe 3 O 4 catalysts were synthesized by encapsulating magnetic SiO 2 @Fe 3 O 4 nanoparticles into ZIF-8 and the as-synthesized catalysts exhibited a good catalytic activity for the Knoevenagel reaction. - Highlights: • A series of novel magnetic ZIF-8@SiO 2 @Fe 3 O 4 catalysts were synthesized. • The catalysts had the larger surface areas and the suitable superparamagnetism. • The catalysts exhibited good catalytic activity for the Knoevenagel reaction. • After reaction the catalyst can be easily separated by an external magnet. • The recovery catalyst can be reused five times and can keep its catalytic activity

  20. Preparation and Photocatalytic Activity of Magnetic Fe3O4/SiO2/TiO2 Composites

    Directory of Open Access Journals (Sweden)

    Rijing Wang

    2012-01-01

    Full Text Available A simple sol-gel method was used to prepare magnetic Fe3O4/SiO2/TiO2 composites with core-shell structure. Fourier transform infrared spectroscopy (FT-IR, X-ray diffraction (XRD, field emission scanning electron microscopy (FE-SEM, and transmission electron microscopy (TEM have been applied to investigate the structure and morphology of the resultant composites. The obtained composites showed excellent magnetism and higher photodegradation ability than pure TiO2. The photocatalytic mechanism was also discussed. The magnetic composites should be extended to various potential applications, such as photodegradation, catalysis, separation, and purification processes.

  1. Laser-controlled stress of Si nanocrystals in a free-standing Si /SiO2 superlattice

    Science.gov (United States)

    Khriachtchev, Leonid; Räsänen, Markku; Novikov, Sergei

    2006-01-01

    We report laser manipulations with stress at the nanoscale level. The continuous-wave Ar+ laser radiation melts Si nanocrystals in a free-standing Si /SiO2 superlattice. Silicon crystallization from the liquid phase leads to a compressive stress, which can be accurately tuned in the 3GPa range using laser annealing below the Si melting temperature and then recovered by laser annealing above the melting temperature. This allows investigations of various phenomena as a function of stress and makes a case of Si-nanocrystal memory with very long retention time, which can be written, erased, and read by optical means.

  2. Formation and relaxation processes of photoinduced defects in a Ge-doped SiO2 glass

    International Nuclear Information System (INIS)

    Yamaguchi, M.; Saito, K.; Ikushima, A.J.

    2002-01-01

    The defect centers induced by ArF laser irradiation in Ge-doped SiO 2 have been investigated by the electron-spin resonance method. In order to observe formation and relaxation processes of the defects, step annealing has been carried out after the irradiation at 77 K. The thermally induced decay of the self-trapped hole (STH) and formation of the so-called Ge(2) centers have been observed with increasing temperature. The result suggests that the holes are transferred from the STH to the Ge(2)

  3. Chemical states of piled-up phosphorus and arsenic atoms at the SiO2/Si interface

    International Nuclear Information System (INIS)

    Yoshimura, Yusuke; Ono, Kanta; Fujioka, Hiroshi; Hayakawa, Shinjiro; Sato, Yoshiyuki; Uematsu, Masashi; Baba, Yuji; Hirose, Kazuyuki; Oshima, Masaharu

    1999-01-01

    We have investigated the positions of the piled-up phosphorus atoms at the SiO 2 /Si interface using the extended X-ray absorption fine structure (EXAFS) and X-ray photoelectron spectroscopy (XPS). The EXAFS and XPS data can be well explained on the assumption that the piled-up arsenic atoms exist at the tetrahedral sites. On the contrary, phosphorus atoms exist not at the tetrahedral sites but at the denser sites. The depth profile measurements of XPS have revealed that the piled-up arsenic and phosphorus atoms exist within 20A from the interface. (author)

  4. Using Apatite to Model Chlorine Contents of High SiO2 Magmas: An Enhanced Methodological Approach

    Science.gov (United States)

    Flesch, R.; Webster, J. D.; Nadeau, P. A.

    2015-12-01

    Hydrothermal experiments were conducted on high-silica (73-75 wt% SiO2), fluid-saturated melts at 844-862°C and ca. 50 MPa using crushed glass of the Los Posos rhyolite. Water and salts including NaCl, KCl, Ca(OH)2, and CaHPO4 and HCl were added proportionally to the experiments to restrict the variability of the aluminosity of the melt. The Durango apatite, which contains 3.53 wt% F and 0.41% Cl, was added as "seeds"bearing magmatic systems.

  5. Hydrogenation/deuteration of the Si -SiO2 interface: Atomic-scale mechanisms and limitations

    Science.gov (United States)

    Tsetseris, L.; Pantelides, S. T.

    2005-03-01

    The mechanisms responsible for exchange of hydrogen with deuterium at the Si -SiO2 interfaces are analyzed through first-principles calculations. The associated reaction barrier is found to be 1.94 eV, in agreement with experiments of Cheng et al. [IEEE Electron. Device Lett. 22, 203 (2001); Cheng et al.J. Appl. Phys. 90, 6536 (2001)] that studied the kinetics of the phenomenon through electrical measurements. The substitution of hydrogen by deuterium can be limited by another possible process, the breakup of the D2 molecule to a pair of Si-D bonds, which has a similar barrier.

  6. Humidity sensor based on a long-period fiber grating coated with a SiO2-nanosphere film

    Science.gov (United States)

    Viegas, D.; Goicoechea, J.; Corres, J. M.; Santos, J. L.; Ferreira, L. A.; Araújo, F. M.; Matias, I. R.

    2008-04-01

    This work addresses a humidity sensor using long-period fiber gratings (LPG) coated with silica nanospheres film. SiO2-nanospheres coating is deposited onto the LPG using the electrostatic self-assembly technique (ESA). The polymeric overlay changes its optical properties when exposed to different humidity levels, resulting in a shift of the resonance wavelength of the LPG. The obtained results are accordant with the theoretical simulations. Wavelength shifts up to 12nm in a humidity range from 20% to 80% are reported, maintaining the same dependence at different temperatures.

  7. Magnetic nanoparticles induced dielectric enhancement in (La, Gd)2O3: SiO2 composite systems

    Science.gov (United States)

    Kao, T. H.; Mukherjee, S.; Yang, H. D.

    2013-11-01

    Magnetic Gd2O3 and non-magnetic La2O3 nanoparticles (NPs) have been synthesized together with different doping concentrations in SiO2 matrix via sol-gel route calcination at 700 °C and above. Properly annealed NP-glass composite systems show enhancement of dielectric constant and magnetodielectric effect (MDE) near room temperature, depending on superparamagnetic NPs concentrations. From application point of view, the enhancement of dielectric constant along with MDE can be achieved by tuning the NPs size through varying calcination temperature and/or increasing the doping concentration of magnetic rare earth oxide.

  8. Highly transparent and UV-resistant superhydrophobic SiO2-coated ZnO nanorod arrays

    KAUST Repository

    Gao, Yangqin

    2014-02-26

    Highly transparent and UV-resistant superhydrophobic arrays of SiO 2-coated ZnO nanorods are prepared in a sequence of low-temperature (<150 C) steps on both glass and thin sheets of PET (2 × 2 in. 2), and the superhydrophobic nanocomposite is shown to have minimal impact on solar cell device performance under AM1.5G illumination. Flexible plastics can serve as front cell and backing materials in the manufacture of flexible displays and solar cells. © 2014 American Chemical Society.

  9. Interaction between SiO2 and a KF-KCl-K2SiF6 Melt.

    Science.gov (United States)

    Zaykov, Yurii P; Isakov, Andrey V; Zakiryanova, Irina D; Reznitskikh, Olga G; Chemezov, Oleg V; Redkin, Alexander A

    2014-02-13

    The solubility mechanism of silica in a fluoride-chloride melt has been determined in situ using Raman spectroscopy. The spectroscopy data revealed that the silica solubility process involved Si-O bond breakage and Si-F bond formation. The process results in the formation of silicate complexes, fluorine-bearing silicate complexes, and silicon tetrafluoride in the melt. Mass spectrometry of the vapor phase over the KF-KCl-K2SiF6 and KF-KCl-K2SiF6-SiO2 melts and differential scanning calorimetry coupled with thermal gravimetric analysis of these melts were performed to verify the silica solubility mechanism.

  10. FE3O4@SIO2-OSO3H NANOCOMPOSITE AS AN EFFICIENT CATALYST FOR THE PREPARATION OF TRICARBOXAMIDES

    Directory of Open Access Journals (Sweden)

    Mohammad Ali Ghasemzadeh

    Full Text Available In this research a highly efficient one-pot preparation of tricarboxamide derivatives via five-component reactions of isocyanides, aldehydes Meldrum's acid and 2equiv. of amines have been developed in the presence of Fe3O4@SiO2-OSO3H nanocomposite. Nano-Fe3O4 encapsulated-silica particles bearing sulfonic acid was readily recovered using an external magnet and could be reused several times without significant loss of reactivity. The catalyst was fully characterized by VSM, FT-IR, SEM, XRD, EDX and TEM analysis.

  11. Structural and optical characterization of Mn doped ZnS nanocrystals elaborated by ion implantation in SiO2

    International Nuclear Information System (INIS)

    Bonafos, C.; Garrido, B.; Lopez, M.; Romano-Rodriguez, A.; Gonzalez-Varona, O.; Perez-Rodriguez, A.; Morante, J.R.; Rodriguez, R.

    1999-01-01

    Mn doped ZnS nanocrystals have been formed in SiO 2 layers by ion implantation and thermal annealing. The structural analysis of the processed samples has been performed mainly by Secondary Ion Mass Spectroscopy (SIMS) and Transmission Electron Microscopy (TEM). The data show the precipitation of ZnS nanocrystals self-organized into two layers parallel to the free surface. First results of the optical analysis of samples co-implanted with Mn show the presence of a yellow-green photoluminescence depending on the Mn concentration and the size of the nanocrystals, suggesting the doping with Mn of some precipitates

  12. Effect of Pad Surface Roughness on SiO2 Removal Rate in Chemical Mechanical Polishing with Ceria Slurry

    Science.gov (United States)

    Yoshida, Masato; Ono, Hiroshi; Nishiyama, Masaya; Ashizawa, Toranosuke; Doi, Toshiro

    2006-02-01

    The effect of pad surface roughness on SiO2 removal rate was investigated using four different slurries containing ceria (CeO2) powders of different crystallite sizes and mean particle sizes. A clear maximum was observed in the dependence of removal rate on pad surface roughness. The four ceria slurries showed a peak in blanket wafer removal rate against pad surface roughness Ra. The peak moved toward larger Ra values with decreasing ceria crystallite size. The removal rate was strongly influenced not only by pad surface roughness but also by the crystallite size of ceria in the slurry.

  13. Cathodoluminescence properties of SiO2:Pr3+and ZnO.SiO2:Pr3+ phosphor nanopowders

    CSIR Research Space (South Africa)

    Mhlongo, GH

    2010-10-01

    Full Text Available regardless of the incorporation of Pr3+ and nanocrystalline ZnO or annealing at 600 °C. The particles were mostly spherical and agglomerated as confirmed by Field Emission Scanning Electron Microscopy. Thermogravimetric analysis of dried gels performed... to the 3P0 → 3H6 transition of Pr3+ was observed at 614 nm from dried and annealed SiO2:Pr 3+ powder samples. This emission was increased considerably when ZnO nanoparticles were incorporated. The CL intensity was measured at an accelerating voltage...

  14. Love waves in SiO(2) layers on STW-resonators based on LiTaO(3).

    Science.gov (United States)

    Barié, N; Wessa, T; Bruns, M; Rapp, M

    2004-01-09

    We present first studies of sensitivity increase of commercially available Murata SAF 380-type surface acoustic wave (SAW) devices by the excitation of Love waves. Sputtered SiO(2) is studied as wave-guiding layer. Excitation of Love waves on such devices is investigated both theoretically and experimentally. It is demonstrated that the application of an optimized wave-guiding layer increases the sensitivity. Both theoretical predictions and experiments yield an optimum layer thickness for maximum mass sensitivity between 3 and 4mum for the given system.

  15. Co-Au core-shell nanocrystals formed by sequential ion implantation into SiO2

    International Nuclear Information System (INIS)

    Kluth, P.; Hoy, B.; Johannessen, B.; Dunn, S. G.; Foran, G. J.; Ridgway, M. C.

    2006-01-01

    Co-Au core-shell nanocrystals (NCs) were formed by sequential ion implantation of Au and Co into thin SiO 2 . The NCs were investigated by means of transmission electron microscopy and extended x-ray absorption fine structure spectroscopy. The latter reveals a bond length expansion in the Co core compared to monatomic Co NCs. Concomitantly, a significant contraction of the bond length and a significant reduction of the effective Au-Au coordination number were observed in the Au shells. Increased Debye-Waller factors indicate significant strain in the NCs. These experimental results verify recent theoretical predictions

  16. The effects of irradiation and proton implantation on the density of mobile protons in SiO2 films

    International Nuclear Information System (INIS)

    Vanheusden, K.

    1998-04-01

    Proton implantation into the buried oxide of Si/SiO 2 /Si structures does not introduce mobile protons. The cross section for capture of radiation-induced electrons by mobile protons is two orders of magnitude smaller than for electron capture by trapped holes. The data provide new insights into the atomic mechanisms governing the generation and radiation tolerance of mobile protons in SiO 2 . This can lead to improved techniques for production and radiation hardening of radiation tolerant memory devices

  17. Microstructure and magnetic properties of FePt:Ag nanocomposite films on SiO2/Si(1 0 0)

    International Nuclear Information System (INIS)

    Wang Hao; Yang, F.J.; Wang, H.B.; Cao, X.; Xue, S.X.; Wang, J.A.; Gao, Y.; Huang, Z.B.; Yang, C.P.; Chiah, M.F.; Cheung, W.Y.; Wong, S.P.; Li, Q.; Li, Z.Y.

    2006-01-01

    FePt:Ag nanocomposite films were prepared by pulsed filtered vacuum arc deposition system and subsequent rapid thermal annealing on SiO 2 /Si(1 0 0) substrates. The microstructure and magnetic properties were investigated. A strong dependence of coercivity and ordering of the face-central tetragonal structure on both Ag concentration and annealing temperature was observed. With Ag concentration of 22% in atomic ratio, the coercivity got to 6.0 kOe with a grain size of 6.7 nm when annealing temperature was 400 deg. C

  18. One-pot reverse microemulsion synthesis of core-shell structured YVO4:Eu3+@SiO2 nanocomposites

    Science.gov (United States)

    Liu, Lina; Yue, Surong; Zhang, Yongsheng; Qin, Ruifei; Liu, Lishuang; Zhang, Dongmei; Sun, Ruirui; Chen, Linfeng

    2015-01-01

    Core-shell structured YVO4:Eu3+@SiO2 nanocomposite particles were synthesized using a one-pot reverse microemulsion method and characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), UV absorption spectra, and photoluminescent spectra. The nanocomposite particles are well-dispersed and about 20 nm in average size. The synthesis method is of one-pot, simplifying the preparation of this kind of core-shell structured nanocomposites. The formation process of these nanocomposite particles is suggested and the photoluminescence properties of them are studied and compared with those of uncoated YVO4:Eu3+ sample.

  19. Size dependent structural, vibrational and magnetic properties of BiFeO3 and core-shell structured BiFeO3@SiO2 nanoparticles

    International Nuclear Information System (INIS)

    Chauhan, Sunil; Kumar, Manoj; Chhoker, Sandeep; Katyal, S. C.

    2014-01-01

    Bulk BiFeO 3 , BiFeO 3 nanoparticles and core-shell structured BiFeO 3 @SiO 2 nanoparticles were synthesized by solid state reaction method, sol-gel and Stöber process (SiO 2 shell) respectively. Transmission electron microscopy image confirmed the core-shell structure of BiFeO 3 @SiO 2 nanoparticles with BiFeO3 core ∼50-90 nm and SiO 2 shell ∼16 nm. X-ray diffraction and FTIR spectroscopy results showed the presence of distorted rhombohedral structure with R3c space group in all three samples. The magnetic measurement indicated the existence of room-temperature weak ferromagnetism in core-shell BiFeO 3 @SiO 2 nanoparticles and BiFeO3 nanoparticles, whereas bulk BiFeO 3 showed antiferromagnteic nature. Electron Spin Resonance results confirmed the enhancement in magnetic properties of coreshell structured BiFeO 3 @SiO 2 nanoparticles in comparison with BiFeO 3 nanoparticles and bulk BiFeO 3

  20. Interaction of SiO2 Nanoparticles with Seed Prechilling on Germination and Early Seedling Growth of Tall Wheatgrass (Agropyron Elongatum L.

    Directory of Open Access Journals (Sweden)

    Azimi Reyhane

    2014-09-01

    Full Text Available The effect of six SiO2 nanosized concentrations (0, 5, 20, 40, 60 and 80 mg L-1 and three seed prechilling treatments (control, seed prechilling before nano SiO2 treatments, treatments of seed with nano SiO2 before prechilling on germination and seedling growth of tall wheatgrass (Agropyron elongatum L. were studied. Results indicated that application of SiO2 nanoparticles significantly increased seed germination of tall wheatgrass from 58 percent in control group to 86.3 and 85.7 percent in 40 and 60 mg L-1, respectively. Applying SiO2 nanoparticles increased dry weight of shoot, root and seedling of tall wheatgrass. Increasing concentration of nanoparticle from 0 up to 40 mg L-1 increased seedling weight around 49 percent compared to the control, nevertheless decreased under 60 and 80 mg L-1 treatments. In conclusion, seed prechilling in combination with SiO2 nanoparticles largely broke the seed dormancy for A. elongatum.

  1. Influence of CO annealing in metal-oxide-semiconductor capacitors with SiO2 films thermally grown on Si and on SiC

    Science.gov (United States)

    Pitthan, E.; dos Reis, R.; Corrêa, S. A.; Schmeisser, D.; Boudinov, H. I.; Stedile, F. C.

    2016-01-01

    Understanding the influence of SiC reaction with CO, a by-product of SiC thermal oxidation, is a key point to elucidate the origin of electrical defects in SiC metal-oxide-semiconductor (MOS) devices. In this work, the effects on electrical, structural, and chemical properties of SiO2/Si and SiO2/SiC structures submitted to CO annealing were investigated. It was observed that long annealing times resulted in the incorporation of carbon from CO in the Si substrate, followed by deterioration of the SiO2/Si interface, and its crystallization as SiC. Besides, this incorporated carbon remained in the Si surface (previous SiO2/Si region) after removal of the silicon dioxide film by HF etching. In the SiC case, an even more defective surface region was observed due to the CO interaction. All MOS capacitors formed using both semiconductor materials presented higher leakage current and generation of positive effective charge after CO annealings. Such results suggest that the negative fixed charge, typically observed in SiO2/SiC structures, is not originated from the interaction of the CO by-product, formed during SiC oxidation, with the SiO2/SiC interfacial region.

  2. Synthesis and Characterization of Magnetized Photocatalyst Fe3O4/SiO2/TiO2 by Heteroagglomeration Method

    Science.gov (United States)

    Hasnah Dewi, Sari; Sutanto; Fisli, A.; Wardiyati, S.

    2016-08-01

    Magnetic photocatalysts Fe3O4/SiO2/TiO2 have been prepared using heteroagglomeration method. Synthesis of magnetic photocatalyst Fe3O4/SiO2/TiO2 was carried out through four stages : (1) synthesis of photocatalyst TiO2 nanoparticles by TiCl4 coprecipitation in ammonia solution, (2) synthesis of Fe3O4 nanoparticles through precipitation method using a mixture of Fe (III) / Fe (II) (2: 1 mole ratio) in ammonia solution, (3) coating with SiO2 through hydrolysis of silicate ion, (4) in the final stage, Fe3O4/SiO2 was mixed with TiO2 in hetero-agglomeration manner. Structure and morphology of resultan composites have been investigated by X-ray diffraction (XRD), Vibrating sample magnetometer (VSM), Fourier transform infrared (FTIR) and Transmission electron microscopy (TEM) were confirmed that composite Fe3O4/SiO2/TiO2 succefully synthesized. The functionality photocatalyst of the particles was tested by eliminating of methylene blue (MB) under UV light. The result showed the magnetite photocatalyst Fe3O4/SiO2/TiO2 has phototacalytic and absorbtion properties so that it has good performance at dyes removal in water higher than pure TiO2, and capable to perform repeatition process at least 4 times.

  3. The preparation and photocatalytic activity of CdS/(Cal-Ta2O5-SiO2) composite photocatalyst under visible light

    Science.gov (United States)

    Li, Juxia

    2018-02-01

    CdS/(Cal-Ta2O5-SiO2) composite photocatalyst has been successfully fabricated via wet chemistry method. Ta2O5-SiO2 with multi-step Ta2O5 deposition on SiO2 has more Ta2O5 on SiO2 to ensure the active sites. Trough multi-step calcination, Ta2O5 can load on SiO2 with uniform and stable, which make it have high photocatalytic activity. The obtained samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), diffuse reflectance ultraviolet-visible spectroscopy (UV-vis) and photoluminescence spectroscopy (PL). Without any co-catalysts, the as-prepared CdS/(Cal-Ta2O5-SiO2) exhibited remarkable photocatalytic activity and recyclability both in the degradation of rhodamine B and in the hydrogen production from water splitting under visible light.

  4. Gate dependent Raman spectroscopy of graphene on hexagonal boron nitride.

    Science.gov (United States)

    Chattrakun, Kanokporn; Huang, Shengqiang; Watanabe, K; Taniguchi, T; Sandhu, A; LeRoy, B J

    2013-12-18

    Raman spectroscopy, a fast and nondestructive imaging method, can be used to monitor the doping level in graphene devices. We fabricated chemical vapor deposition (CVD) grown graphene on atomically flat hexagonal boron nitride (hBN) flakes and SiO2 substrates. We compared their Raman response as a function of charge carrier density using an ion gel as a top gate. The G peak position, the 2D peak position, the 2D peak width and the ratio of the 2D peak area to the G peak area show a dependence on carrier density that differs for hBN compared to SiO2. Histograms of two-dimensional mapping are used to compare the fluctuations in the Raman peak properties between the two substrates. The hBN substrate has been found to produce fewer fluctuations at the same charge density owing to its atomically flat surface and reduced charged impurities.

  5. Photocatalytic, Morphological and Structural Properties of the TiO2-SiO2-Ag Porous Structures Based System

    Directory of Open Access Journals (Sweden)

    Gábor Kovács

    2015-03-01

    Full Text Available TiO2-SiO2-based nanocomposites with highly porous structures are gaining ever increasing attention due to their specific properties and large variability of synthesis pathways together with wide information on the impact of the synthesis on the activity of the catalyst. This thereby offers an alternative approach to traditional/commercially available photocatalysts. In our work TiO2-SiO2 based aerogels were obtained and modified with various amount of Ag nanoparticles, using different synthesis pathways. In the first instance their photocatalytic activity was examined in detail, by observing major differences toward salicylic acid and correlating them with their morphological and structural properties (investigating their mesoporous character, band-gap values, crystallinity grade etc.. Applying different techniques such as diffuse reflectance spectroscopy (DRS, X-ray diffraction measurements (XRD, transmission electron microscopy (TEM, Raman- and X-ray photoelectron spectroscopy (XPS the nanoparticles and their composite morphological and structural details were successfully evaluated. Major differences were observed in the activity towards salicylic acid.

  6. Effectively Improved SiO2-TiO2 Composite Films Applied in Commercial Multicrystalline Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Chih-Hsiang Yang

    2013-01-01

    Full Text Available Composite silicon dioxide-titanium dioxide (SiO2-TiO2 films are deposited on a large area of 15.6 × 15.6 cm2 textured multicrystalline silicon solar cells to increase the incident light trapped within the device. For further improvement of the antireflective coatings (ARCs quality, dimethylformamide (DMF solution is added to the original SiO2-TiO2 solutions. DMF solution solves the cracking problem, thus effectively decreasing reflectance as well as surface recombination. The ARCs prepared by sol-gel process and plasma-enhanced chemical vapor deposition (PECVD on multicrystalline silicon substrate are compared. The average efficiency of the devices with improved sol-gel ARCs is 16.3%, only 0.5% lower than that of devices with PECVD ARCs (16.8%. However, from equipment depreciation point of view (the expiration date of equipment is generally considered as 5 years, the running cost (USD/watt of sol-gel technique is 80% lower than that of PECVD method for the first five years and 66% lower than that of PECVD method from the start of the sixth year. This result proves that sol-gel-deposited ARCs process has potential applications in manufacturing low-cost, large-area solar cells.

  7. A VUV photoionization measurement and ab-initio calculation of the ionization energy of gas phase SiO2

    Energy Technology Data Exchange (ETDEWEB)

    Kostko, Oleg; Ahmed, Musahid; Metz, Ricardo B.

    2008-12-05

    In this work we report on the detection and vacuum-ultraviolet (VUV) photoionization of gas phase SiO2 generated in situ via laser ablation of silicon in a CO2 molecular beam. The resulting species are investigated by single photon ionization with tunable VUV synchrotron radiation and mass analyzed using reflectron mass spectrometry. Photoionization efficiency (PIE) curves are recorded for SiO and SiO2 and ionization energy estimates are revealed from such measurements. A state-to-state ionizationenergy of 12.60 (+-0.05) eV is recorded by fitting two prominent peaks in the PIE curve for the following process: 1SUM O-Si-O --> 2PRODg [O-Si-O]+. Electronic structure calculations aid in the interpretation of the photoionization process and allow for identification of the symmetric stretch of 2PRODg [O-Si-O]+ which is observed in the PIE spectrum to be 0.11 eV (890 cm-1) above the ground state of the cation and agrees with the 892 cm-1 symmetric stretch frequency calculated at the CCSD(T)/aug-cc-pVTZ level.

  8. Preparation and characterization of ZnO particles embedded in SiO2 matrix by reactive magnetron sputtering

    International Nuclear Information System (INIS)

    Ma, J.G.; Liu, Y.C.; Xu, C.S.; Liu, Y.X.; Shao, C.L.; Xu, H.Y.; Zhang, J.Y.; Lu, Y.M.; Shen, D.Z.; Fan, X.W.

    2005-01-01

    ZnO particles embedded in SiO 2 thin films were prepared by a radio-frequency magnetron sputtering technique. X-ray diffraction (XRD) and optical-absorption spectra showed that ZnO particles with hexagonal wurtzite structure had been embedded in the SiO 2 matrix, and the size of ZnO particles increased with increasing annealing temperature from 773 to 973 K. Raman-scattering and Fourier transform infrared (FTIR) spectrum measurements also confirmed the presence of ZnO particles. When the annealing temperature was lower than 973 K, room-temperature photoluminescence (PL) spectra showed dominative deep-level emissions in the visible region and very weak ultraviolet emissions. As the annealing temperature increased to 973 K, an emission band in the ultraviolet region besides the emissions from free and bound excitons recombination was observed in the low-temperature PL spectra. The origin of the ultraviolet emission bands was discussed with the help of temperature-dependent PL spectra. When the annealing temperature was higher than 973 K, Zn 2 SiO 4 particles were formed, as shown by XRD and FTIR results

  9. IrO2-SiO2 binary oxide films: Preparation, physiochemical characterization and their electrochemical properties

    International Nuclear Information System (INIS)

    Wang Xiaomei; Hu Jiming; Zhang Jianqing

    2010-01-01

    Mixed IrO 2 -SiO 2 oxide films were prepared on titanium substrate by the thermo-decomposition of hexachloroiridate (H 2 IrCl 6 ) and tetraethoxysilane (TEOS) mixed precursors in organic solvents. The solution chemistry and thermal decomposition kinetics of the mixed precursors were investigated by ultra violet/visible (UV/vis) spectroscopy and thermogravimetry (TGA) and differential thermal analysis (DTA), respectively. The physiochemical characterization of the resulting materials was conducted by X-ray diffraction (XRD), scanning electron microscopy (SEM) and electrochemical measurements. It is shown from the UV/vis spectra that the electronic absorption intensity of IrCl 6 2- complexes in the precursors decreases in the presence of TEOS, indicating the interaction between these two components. Thermal analysis shows the decomposition reaction of H 2 IrCl 6 is inhibited by TEOS in the low temperature range, but the further oxidation reaction at high temperatures of formed intermediates is independent of the presence of silane component. Physical measurements show a restriction effect of silica on the crystallization and crystal growth processes of IrO 2 , leading to the formation of finer oxide particles and the porous morphology of the binary oxide films. The porous composite films exhibit high apparent electrocatalytic activity toward the oxygen evolution reaction. In addition, the long-term stability of Ti-supported IrO 2 electrodes is found to apparently improve with appropriate amount of SiO 2 incorporation, as tested under galvanostatic electrolysis.

  10. HIDRODENITROGENACION DE CARBAZOL SOBRE CATALIZADORES NiMo/Al2O3-SiO2(x

    Directory of Open Access Journals (Sweden)

    Felipe Sánchez-Minero

    2012-01-01

    Full Text Available En este trabajo se estudió la velocidad de reacción del carbazol sobre catalizadores NiMo soportados sobre Al2O3 modificada superficialmente con SiO2 (0 y 10 % en peso de SiO2 en el soporte. Los catalizadores fueron evaluados en un reactor intermitente a cuatro temperaturas (287, 300, 312 y 325oC, presión de 4.0 MPa y relación molar hidrogeno/carbazol de 2400. A partir de los resultados experimentales se realizó un estudio cinético utilizando ecuaciones del tipo Langmuir-Hinshelwood (L-H. Luego, los parámetros cinéticos fueron estimados mediante la minimización de Powell (programa Scientist de MicroMath. Los resultados muestran que el catalizador con sílice (NiMo-SAC 10 alcanza una mayor actividad para la HDN de carbazol debido a que presenta un mayor número de sitios activos (valor de A, así como una menor fuerza de adsorción entre el reactante y la superficie catalítica (valor de KN, lo cual posiblemente favorece una mejor regeneración de sitios activos.

  11. Effect of Si implantation on the microstructure of silicon nanocrystals and surrounding SiO2 layer

    International Nuclear Information System (INIS)

    Ross, G.G.; Smirani, R.; Levitcharsky, V.; Wang, Y.Q.; Veilleux, G.; Saint-Jacques, R.G.

    2005-01-01

    Si nanocrystals (Si-nc) embedded in a SiO 2 layer have been characterized by means of transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). For local Si concentration in excess 8 x 10 21 Si + /cm 3 , the size of the Si-nc was found to be ∼3 nm and comparatively homogeneous throughout the whole implanted layer. For local Si concentration in excess of ∼2.4 x 10 22 Si + /cm 3 , the Si-nc diameter ranges from ∼2 to ∼12 nm in the sample, the Si-nc in the middle region of the implanted layer being bigger than those near the surface and the bottom of the layer. Also, Si-nc are visible deeper than the implanted depth. Characterization by XPS shows that a large quantity of oxygen was depleted from the first ∼25 nm in this sample (also visible on TEM image) and most of the SiO 2 bonds have been replaced by Si-O bonds. Experimental and simulation results suggest that a local Si concentration in excess of ∼3 x 10 21 Si/cm 3 is required for the production of Si-nc

  12. Paramagnetic point defects in amorphous thin films of SiO2 and Si3N4: An update

    Science.gov (United States)

    Poindexter, E. H.; Warren, W. L.

    Recent research on point defects in thin films of SiO2 and Si3SN4 on Si is presented and reviewed. In SiO2 it is now clear that no one type of E(prime) center is the sole source of radiation-induced positive charge; hydrogenous moieties or other types of E(prime) are proposed. Molecular orbital theory and easy passivation of E(prime) by H2 suggest that released H might depassivate P(sub b) sites. A charged E(prime)(sub delta) center has been seen in Cl-free SIMOX and thermal oxide film, and it is reassigned to an electron delocalized over four O3 triple bond Si units around a fifth Si. In Si3N4 a new model for the amphoteric charging of Si triple bond N3 moieties is based on local shifts in defect energy with respect to the Fermi level, arising from nonuniform composition; it does not assume negative-U electron correlation. A new defect NN(sub 2)(sup 0) has been identified, with dangling orbital on a 2-coordinated N atom bonded to another N.

  13. Atom probe tomography analysis of SiGe fins embedded in SiO2: Facts and artefacts.

    Science.gov (United States)

    Melkonyan, D; Fleischmann, C; Arnoldi, L; Demeulemeester, J; Kumar, A; Bogdanowicz, J; Vurpillot, F; Vandervorst, W

    2017-08-01

    We present atom probe analysis of 40nm wide SiGe fins embedded in SiO 2 and discuss the root cause of artefacts observed in the reconstructed data. Additionally, we propose a simple data treatment routine, relying on complementary transmission electron microscopy analysis, to improve compositional analysis of the embedded SiGe fins. Using field evaporation simulations, we show that for high oxide to fin width ratios the difference in evaporation field thresholds between SiGe and SiO 2 results in a non-hemispherical emitter shape with a negative curvature in the direction across, but not along the fin. This peculiar emitter shape leads to severe local variations in radius and hence in magnification across the emitter apex causing ion trajectory aberrations and crossings. As shown by our experiments and simulations, this translates into unrealistic variations in the detected atom densities and faulty dimensions in the reconstructed volume, with the width of the fin being up to six-fold compressed. Rectification of the faulty dimensions and density variations in the SiGe fin was demonstrated with our dedicated data treatment routine. Copyright © 2017 Elsevier B.V. All rights reserved.

  14. Toluene and chlorobenzene dinitration over solid H3PO4/MoO3/SiO2 catalyst.

    Science.gov (United States)

    Adamiak, Joanna; Kalinowska-Alichnewicz, Dorota; Szadkowski, Michał; Skupiński, Wincenty

    2011-11-15

    A new catalyst, H(3)PO(4)/MoO(3)/SiO(2), was prepared by modification of MoO(3)/SiO(2) using phosphoric acid. The characterization of the catalyst was performed using Infrared and Raman Spectroscopy, potentiometric titration and nitrogen adsorption-desorption methods. Molybdenum oxides were identified along with phosphomolybdic acid and polymolybdates on the modified surface. The suitability of the catalysts for toluene and chlorobenzene nitration in continuous process was examined. Toluene is effectively nitrated to dinitrotoluene (DNT) in one-stage process (96 wt.% of DNT in the product) and in mild conditions i.e. at room temperature and only with ten-fold excess of nitric acid. In chlorobenzene nitration only twelve-fold excess of nitric acid is needed to obtain as high yield as 95 wt.%. Most importantly, the novel catalysts we have developed, provide the opportunity for sulfuric acid- free nitration of aromatic compounds. Copyright © 2011 Elsevier B.V. All rights reserved.

  15. Photo-induced tunneling currents in MOS structures with various HfO2/SiO2 stacking dielectrics

    Directory of Open Access Journals (Sweden)

    Chin-Sheng Pang

    2014-04-01

    Full Text Available In this study, the current conduction mechanisms of structures with tandem high-k dielectric in illumination are discussed. Samples of Al/SiO2/Si (S, Al/HfO2/SiO2/Si (H, and Al/3HfO2/SiO2/Si (3H were examined. The significant observation of electron traps of sample H compares to sample S is found under the double bias capacitance-voltage (C-V measurements in illumination. Moreover, the photo absorption sensitivity of sample H is higher than S due to the formation of HfO2 dielectric layer, which leads to larger numbers of carriers crowded through the sweep of VG before the domination of tunneling current. Additionally, the HfO2 dielectric layer would block the electrons passing through oxide from valance band, which would result in less electron-hole (e−-h+ pairs recombination effect. Also, it was found that both of the samples S and H show perimeter dependency of positive bias currents due to strong fringing field effect in dark and illumination; while sample 3H shows area dependency of positive bias currents in strong illumination. The non-uniform tunneling current through thin dielectric and through HfO2 stacking layers are importance to MOS(p tunneling photo diodes.

  16. The Effects of SiO2 Nanoparticles on Mechanical and Physicochemical Properties of Potato Starch Films

    Directory of Open Access Journals (Sweden)

    Z. Torabi

    2013-06-01

    Full Text Available In this paper effect of SiO2 nanoparticles was investigated on potato starch films. Potato starch films were prepared by casting method with addition of nano-silicon dioxide and a mixture of sorbitol/glycerol (weight ratio of 3 to 1 as plasticizers. SiO2 nanoparticles incorporated to the potato starch films at different concentrations 0, 1, 2, 3, and 5% of total solid, and the films were dried under controlled conditions.  Physicochemical properties such as water absorption capacity (WAC, water vapor permeability (WVP and mechanical properties of the films were measured. Results show that by increasing the concentration of silicon dioxide nanoparticles, mechanical properties of films can be improved. Also incorporation of silicon dioxide nanoparticles in the structure of biopolymer decrease permeability of the gaseous molecules such as water vapor. In summary, addition of silicon dioxide nanoparticles improves functional properties of potato starch films and these bio Nano composites can be used in food packaging.

  17. Magnetite (Fe3O4 Nanoparticle Synthesis using Silica (SiO2 Template and Magnetic Properties Characterisation

    Directory of Open Access Journals (Sweden)

    Suryani Taib

    2015-12-01

    Full Text Available Nanoparticles of magnetite (Fe3O4 have been successfully synthesized by coprecipitation method by mixing FeSO4.7H2O and FeCl3.6H2O with the addition of 10% NH4OH as kopresipitan. Then, functionalized Fe3O4  concentration variation silica (SiO2 5%, 10%, 15%, 20%, 30% and 50%. Particle size and magnetic properties of Fe3O4 nanoparticles were tested by X-Ray Diffraction (XRD and Vibrating Sample Magnetometer (VSM. XRD results showed the addition of silica is not found new phases when added SiO2that serves as a template. The particle size of Fe3O4 nanoparticles obtained 14.23 nm, while the Fe3O4nanoparticles with the addition of a concentration of 5% and 20% respectively SiO215.45 nm and 16.37 nm. VSM results show the value of saturation magnetization and remanent magnetization decreased as more silica concentration, and increased coercivity field. Test Results of Fourier Transform Infra Red (FTIR obtained new peaks which indicate that the functionalization process Fe3O4 with silica has been successfully carried out.

  18. Effect of ion implantation energy for the synthesis of Ge nanocrystals in SiN films with HfO2/SiO2 stack tunnel dielectrics for memory application

    Directory of Open Access Journals (Sweden)

    Gloux Florence

    2011-01-01

    Full Text Available Abstract Ge nanocrystals (Ge-NCs embedded in SiN dielectrics with HfO2/SiO2 stack tunnel dielectrics were synthesized by utilizing low-energy (≤5 keV ion implantation method followed by conventional thermal annealing at 800°C, the key variable being Ge+ ion implantation energy. Two different energies (3 and 5 keV have been chosen for the evolution of Ge-NCs, which have been found to possess significant changes in structural and chemical properties of the Ge+-implanted dielectric films, and well reflected in the charge storage properties of the Al/SiN/Ge-NC + SiN/HfO2/SiO2/Si metal-insulator-semiconductor (MIS memory structures. No Ge-NC was detected with a lower implantation energy of 3 keV at a dose of 1.5 × 1016 cm-2, whereas a well-defined 2D-array of nearly spherical and well-separated Ge-NCs within the SiN matrix was observed for the higher-energy-implanted (5 keV sample for the same implanted dose. The MIS memory structures implanted with 5 keV exhibits better charge storage and retention characteristics compared to the low-energy-implanted sample, indicating that the charge storage is predominantly in Ge-NCs in the memory capacitor. A significant memory window of 3.95 V has been observed under the low operating voltage of ± 6 V with good retention properties, indicating the feasibility of these stack structures for low operating voltage, non-volatile memory devices.

  19. Investigation of Impact of the Gate Circuitry on IGBT Transistor Dynamic Parameters

    Directory of Open Access Journals (Sweden)

    Vytautas Bleizgys

    2011-03-01

    Full Text Available The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated. The influence of transistor driver circuit parameters on heating of Insulated Gate Bipolar Transistors was investigated as well.Article in Lithuanian

  20. Co-electrospinning fabrication and photocatalytic performance of TiO2/SiO2 core/sheath nanofibers with tunable sheath thickness

    International Nuclear Information System (INIS)

    Cao, Houbao; Du, Pingfan; Song, Lixin; Xiong, Jie; Yang, Junjie; Xing, Tonghai; Liu, Xin; Wu, Rongrong; Wang, Minchao; Shao, Xiaoli

    2013-01-01

    Graphical abstract: - Highlights: • The core–sheath TiO 2 /SiO 2 nanofibers were fabricated by co-electrospinning technique. • The catalytic property of nanofibers with different sheath thickness was studied. • The potential methods of improving catalytic efficiency are suggested. - Abstract: In this paper, core/sheath TiO 2 /SiO 2 nanofibers with tunable sheath thickness were directly fabricated via a facile co-electrospinning technique with subsequent calcination at 500 °C. The morphologies and structures of core/sheath TiO 2 /SiO 2 nanofibers were characterized by TGA, FESEM, TEM, FTIR, XPS and BET. It was found that the 1D core/sheath nanofibers are made up of anatase–rutile TiO 2 core and amorphous SiO 2 sheath. The influences of SiO 2 sheath and its thickness on the photoreactivity were evaluated by observing photo-degradation of methylene blue aqueous solution under the irradiation of UV light. Compared with pure TiO 2 nanofibers, the core/sheath TiO 2 /SiO 2 nanofibers performed a better catalytic performance. That was attributed to not only efficient separation of hole–electron pairs resulting from the formation of heterojunction but also larger surface area and surface silanol group which will be useful to provide higher capacity for oxygen adsorption to generate more hydroxyl radicals. And the optimized core/sheath TiO 2 /SiO 2 nanofibers with a sheath thickness of 37 nm exhibited the best photocatalytic performance

  1. A chemiluminescence biosensor based on the adsorption recognition function between Fe3O4@SiO2@GO polymers and DNA for ultrasensitive detection of DNA

    Science.gov (United States)

    Sun, Yuanling; Li, Jianbo; Wang, Yanhui; Ding, Chaofan; Lin, Yanna; Sun, Weiyan; Luo, Chuannan

    2017-05-01

    In this work, a chemiluminescence (CL) biosensor was prepared for ultrasensitive determination of deoxyribonucleic acid (DNA) based on the adsorption recognition function between core-shell Fe3O4@SiO2 - graphene oxide (Fe3O4@SiO2@GO) polymers and DNA. The Fe3O4@SiO2@GO polymers were composed by GO and magnetite nanoparticles. And the core-shell polymers were confirmed by Scanning Electron Microscope (SEM), X-Ray Powder Diffraction (XRD) and Fourier Transform Infrared (FTIR). Then Fe3O4@SiO2@GO was modified by DNA. Based on the principle of complementary base, Fe3O4@SiO2@GO-DNA was introduced to the CL system and the selectivity, sensitivity of DNA detection was significantly improved. The adsorption properties of Fe3O4@SiO2@GO to DNA were researched through the adsorption equilibrium, adsorption kinetic and thermodynamics. Under optimized CL conditions, DNA could be assayed with the linear concentration range of 5.0 × 10- 12-2.5 × 10- 11 mol/L. The detection limit was 1.7 × 10- 12 mol/L (3δ) and the relative standard deviation (RSD) was 3.1%. The biosensor was finally used for the determination of DNA in laboratory samples and recoveries ranged from 99% to 103%. The satisfactory results revealed the potential application of Fe3O4@SiO2@GO-DNA-CL biosensor in the diagnosis and the treatment of human genetic diseases.

  2. Measurement of the quantum capacitance from two-dimensional surface state of a topological insulator at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Choi, Hyunwoo, E-mail: chw0089@gmail.com [Department of Electrical and Computer Engineering, University of Seoul, Seoul 02504 (Korea, Republic of); Kim, Tae Geun, E-mail: tgkim1@korea.ac.kr [School of Electrical Engineering, Korea University, Seoul 02841 (Korea, Republic of); Shin, Changhwan, E-mail: cshin@uos.ac.kr [Department of Electrical and Computer Engineering, University of Seoul, Seoul 02504 (Korea, Republic of)

    2017-06-15

    Highlights: • The quantum capacitance in topological insulator (TI) at room temperature is directly revealed. • The physical origin of quantum capacitance, the two dimensional surface state of TI, is experimentally validated. • Theoretically calculated results of ideal quantum capacitance can well predict the experimental data. - Abstract: A topological insulator (TI) is a new kind of material that exhibits unique electronic properties owing to its topological surface state (TSS). Previous studies focused on the transport properties of the TSS, since it can be used as the active channel layer in metal-oxide-semiconductor field-effect transistors (MOSFETs). However, a TI with a negative quantum capacitance (QC) effect can be used in the gate stack of MOSFETs, thereby facilitating the creation of ultra-low power electronics. Therefore, it is important to study the physics behind the QC in TIs in the absence of any external magnetic field, at room temperature. We fabricated a simple capacitor structure using a TI (TI-capacitor: Au-TI-SiO{sub 2}-Si), which shows clear evidence of QC at room temperature. In the capacitance-voltage (C-V) measurement, the total capacitance of the TI-capacitor increases in the accumulation regime, since QC is the dominant capacitive component in the series capacitor model (i.e., C{sub T}{sup −1} = C{sub Q}{sup −1} + C{sub SiO2}{sup −1}). Based on the QC model of the two-dimensional electron systems, we quantitatively calculated the QC, and observed that the simulated C-V curve theoretically supports the conclusion that the QC of the TI-capacitor is originated from electron–electron interaction in the two-dimensional surface state of the TI.

  3. Topological insulators

    CERN Document Server

    Franz, Marcel

    2013-01-01

    Topological Insulators, volume six in the Contemporary Concepts of Condensed Matter Series, describes the recent revolution in condensed matter physics that occurred in our understanding of crystalline solids. The book chronicles the work done worldwide that led to these discoveries and provides the reader with a comprehensive overview of the field. Starting in 2004, theorists began to explore the effect of topology on the physics of band insulators, a field previously considered well understood. However, the inclusion of topology brings key new elements into this old field. Whereas it was

  4. Ladle and Continuous Casting Process Models for Reduction of SiO2 in SiO2-Al2O3-CaO Slags by Al in Fe-Al(-Si) Melts

    Science.gov (United States)

    Park, Jiwon; Sridhar, S.; Fruehan, Richard J.

    2015-02-01

    Based on a mixed control or two-phase mass transfer model considering mass transport in the metal and the slag phases, process models for ladle and continuous castor mold were developed to predict the changes in the metal and the slag chemistry and viscosity. In the ladle process model, the rate of reaction is primarily determined by stirring gas flow rate, which greatly alters the mass transports of the metal and the slag phases. In the continuous casting process model, the effects of the Al, Si, and SiO2 contents in the incoming flow of the fluid phases, casting speed, mold flux consumption rate, and depth of the liquid mold flux pool on the steady-state compositions of the metal and the mold flux were assessed.

  5. A novel low specific on-resistance double-gate LDMOS with multiple buried p-layers in the drift region based on the Silicon-On-Insulator substrate

    Science.gov (United States)

    Chen, Yinhui; Hu, Shengdong; Cheng, Kun; Jiang, YuYu; Luo, Jun; Wang, Jian'an; Tang, Fang; Zhou, Xichuan; Zhou, Jianlin; Gan, Ping

    2016-01-01

    A novel double-gate SOI LDMOS with multiple buried p-layers in the drift region (MBP SOI LDMOS) is proposed in this paper. MBP SOI LDMOS has two gates, the planar gate and the trench gate. The big feature of MBP LDMOS is the multiple buried p-layers with intervals in the drift region which is an arithmetic progression and decreases successively. Firstly, double gates of the structure form dual current conduction channels, leading to a low specific on-resistance (Ron,sp). Secondly, the multiple buried p-layers form a more significant triple RESURF effect, which not only increases the drift doping concentration but also modulates the electric field of the drift region, resulting in a low Ron,sp and a high breakdown voltage (BV). MBP SOI LDMOS is thus owning a reduced Ron,sp and an improved BV. The effects of structure parameters on the device performances are investigated. Compared with the conventional SOI LDMOS, the Ron,sp of MBP SOI LDMOS is reduced by 52.5% with BV increasing by 36.4% at the same 16-μm-drift region.

  6. Structural aspects of B2O3-substituted (PbO)0.5(SiO2)0.5 glasses

    International Nuclear Information System (INIS)

    Sudarsan, V.; Kulshreshtha, S.K.; Shrikhande, V.K.; Kothiyal, G.P.

    2002-01-01

    Lead borosilicate glasses having general formulae (PbO) 0.5-x (SiO 2 ) 0.5 (B 2 O 3 ) x with 0.0≤x≤0.4 and (PbO) 0.5 (SiO 2 ) 0.5-y (B 2 O 3 ) y with 0.0≤y≤0.5 have been prepared by a conventional melt-quench method and characterized by 29 Si, 11 B magic angle spinning (MAS) NMR techniques and infrared spectroscopy, as regards their structural features. From 29 Si NMR results, it has been inferred that with increasing concentration of boron oxide, (PbO) 0.5-x (SiO 2 ) 0.5 (B 2 O 3 )x glasses exhibit a systematic increase in the number of Q 4 structural units of Si at the expense of Q 2 structural units, along with the formation of Si-O-B linkages. On the other hand, for (PbO) 0.5 (SiO 2 ) 0.5-y (B 2 O 3 ) y glasses, there is no direct interaction between SiO 2 and B 2 O 3 in the glass network, as revealed by the 29 Si MAS NMR studies. Boron exists in both trigonal and tetrahedral configurations for these two series of glasses and for the (PbO) 0.5 (SiO 2 ) 0.5-y (B 2 O 3 ) y series of glasses; the relative concentration of these two structural units remains almost constant with increasing B 2 O 3 concentration. In contrast, for (PbO) 0.5-x (SiO 2 ) 0.5 (B 2 O 3 ) x glasses, there is a slight increase in the number of BO 3 structural units above x = 0.2, as there is a competition between SiO 2 and B 2 O 3 for interaction with Pb 2+ , thereby leading to the formation of BO 3 structural units. For both series of glasses, the thermal expansion coefficient is found to decrease with increasing B 2 O 3 concentration, the effect being more pronounced for the (PbO) 0.5-x (SiO 2 ) 0.5 (B 2 O 3 ) x series of glasses due to the increased concentration of Q 4 structural units of silicon and better cross-linking as a result of the formation of Si-O-B-type linkages. (author)

  7. A new approach to the drug release kinetics of a discrete system: SiO2 system obtained by ultrasonic dry spraying.

    Science.gov (United States)

    Jokanović, V; Čolović, B; Dutour Sikirić, M; Trajković, V

    2013-01-01

    Mesoporous silica materials have already proved to be non-toxic and biocompatible, and also to have large pore volume and very high specific surface area suitable for loading of small molecules. Having this in mind and the fact that silicon dioxide (SiO(2)) powders can be so designed to obtain particle structures organized at multi levels, SiO(2) was chosen as a potential carrier for metronidazole, an antibiotic drug. SiO(2) powder was synthesized in two stages: first silica sol was prepared by hydrothermal synthesis and second the sol was converted into powder by dry spraying with simultaneous incorporation of the antibiotic into its structure. Scanning and transmission electron microscopy study revealed very complex structure and sub-structure of SiO(2) particles. Cell viability tests were used for estimation of cytotoxicity of so synthesized SiO(2). The drug release data showed that the system can provide drug release for a long time. Also, the device behavior is fully predictable, according to our theoretical model of multilevel structure design, and gives many opportunities for model investigations of drug release and its kinetics. The pore sizes and their distribution were observed as a limiting factor of drug release kinetics. Therefore, as the pore sizes are given as a set of discrete values, the kinetics of drug release might also be given as a set of corresponding discrete values. Copyright © 2012 Elsevier B.V. All rights reserved.

  8. A novel TiO2-SiO2 aerogel nanocomposite absorbent: preparation, characterization and photocatalytic degradation effects on automobile exhaust

    Science.gov (United States)

    Zhang, Saisai; Zhang, Zhengqi; Pei, Jianzhong; Li, Rui; Zhang, Jiupeng; Cai, Jun; Cui, Jiexue

    2018-02-01

    In this paper, a novel TiO2-SiO2 aerogel nanocomposite absorbent was successfully synthesized using the sol-gel and ambient pressure drying method, and its photocatalytic degradation effects on automobile exhaust were investigated for the first time. The microstructures and properties of the Nano TiO2-SiO2 aerogels were characterized using various methods, including x-ray Diffraction (XRD), Brunauer–Emmett–Teller (BET) specific surface area analysis, Scanning Electron Microscope (SEM), Energy Dispersive Spectroscopy (EDS) and Fourier Transform Infrared Spectroscopy (FT-IR). The exhaust purification tests were conducted in a self-developed instrument to investigate the degradation effects of Nano TiO2-SiO2 aerogels on automobile exhaust through degradation rate. Experimental results showed that the Nano TiO2-SiO2 aerogels had a good photocatalytic degradation effect on automobile exhaust, and the degradation rates of CO, CO2, HC and NOx were 1.3%, 1.5%, 3.2% and 34.4%, respectively. The well-designed microstructure makes the Nano TiO2-SiO2 aerogels a stable photocatalytic material with high specific surface area and big average pore size, which has promising applications in environmental treatment.

  9. One-Step Synthesis of Hierarchical Micro-Mesoporous SiO2/Reduced Graphene Oxide Nanocomposites for Adsorption of Aqueous Cr(VI

    Directory of Open Access Journals (Sweden)

    Guiyun Yi

    2017-01-01

    Full Text Available A novel micro-mesostructured SiO2/reduced graphene oxide (RGO nanocomposite was successfully synthesized by means of simple one-step hydrothermal method under acidic conditions using tetraethoxysilane (TEOS and graphene oxide (GO as the raw material. The nanocomposites were characterized by TEM, XRD, FT-IR, TG-DSC, and N2 adsorption-desorption. The results showed that GO was partially reduced to RGO without adding any reducing agent and SiO2 nanoparticles (ca. 10 nm were uniformly anchored on the surface of RGO. The optimized composite contained 75 wt.% SiO2 and possessed hierarchical micro-mesoporous structure with surface area of 676 m2/g. The adsorption performance of synthesized SiO2/RGO samples was investigated by removal efficiency of Cr(VI ions in wastewater. The Cr(VI adsorption reached equilibrium in 30 min and 98.8% Cr(VI adsorption efficiency was achieved at pH = 2 at 35°C. Stability tests showed that SiO2 nanoparticles effectively prevented RGO from the restacking. The mechanisms of composite formation and for Cr(VI adsorption were suggested.

  10. Cs2.5H0.5PWO40/SiO2 as addition self-humidifying composite membrane for proton exchange membrane fuel cells

    International Nuclear Information System (INIS)

    Wang, L.; Yi, B.L.; Zhang, H.M.; Xing, D.M.

    2007-01-01

    In this paper, we first reported a novel self-humidifying composite membrane for the proton exchange membrane fuel cell (PEMFC). Cs 2.5 H 0.5 PWO 40 /SiO 2 catalyst particles were dispersed uniformly into the Nafion (registered) resin, and then Cs 2.5 H 0.5 PWO 40 -SiO 2 /Nafion composite membrane was prepared using solution-cast method. Compared with the H 3 PWO 40 (PTA) , the Cs 2.5 H 0.5 PWO 40 /SiO 2 was steady due to the substitute of H + with Cs + and the interaction between the Cs 2.5 H 0.5 PWO 40 and SiO 2 . And compared with the performance of the fuel cell with commercial Nafion (registered) NRE-212 membrane, the cell performance with the self-humidifying composite membrane was obviously improved under both humidified and dry conditions at 60 and 80 o C. The best performance under dry condition was obtained at 60 o C. The self-humidifying composite membrane could minimize membrane conductivity loss under dry conditions due to the presence of catalyst and hydrophilic Cs 2.5 H 0.5 PWO 40 /SiO 2 particles

  11. Microstructural dependence on relevant physical-mechanical properties on SiO2-Na2O-CaO-P2O5 biological glasses.

    Science.gov (United States)

    Rajendran, V; Begum, A Nishara; Azooz, M A; el Batal, F H

    2002-11-01

    Bioactive glasses of the system SiO2-Na2O-CaO-P2O5 have been prepared by the normal melting and annealing technique. The elastic moduli, attenuation, Vickers hardness, fracture toughness and fracture surface energy have been obtained using the known method at room temperature. The temperature dependence of elastic moduli and attenuation measurements have been extended over a wide range of temperature from 150 to 500 K. The SiO2 content dependence of velocities, attenuation, elastic moduli, and other parameters show an interesting observation at 45 wt% of SiO2 by exhibiting an anomalous behaviour. A linear relation is developed for Tg, which explores the influence of Na2O on SiO2-Na2O-CaO-P2O5 bioactive glasses. The measured hardness, fracture toughness and fracture surface energy show a linear relation with Young's modulus. It is also interesting to note that the observed results are functions of polymerisation and the number of non-bridging oxygens (NBO) prevailing in the network with change in SiO2 content. The temperature dependence of velocities, attenuation and elastic moduli show the existence of softening in the glass network structure as temperature increases.

  12. Origin of the n -type and p -type conductivity of MoS 2 monolayers on a SiO 2 substrate

    KAUST Repository

    Dolui, Kapildeb

    2013-04-02

    Ab initio density functional theory calculations are performed to study the electronic properties of a MoS2 monolayer deposited over a SiO 2 substrate in the presence of interface impurities and defects. When MoS2 is placed on a defect-free substrate, the oxide plays an insignificant role since the conduction band top and the valence band minimum of MoS2 are located approximately in the middle of the SiO2 band gap. However, if Na impurities and O dangling bonds are introduced at the SiO2 surface, these lead to localized states, which modulate the conductivity of the MoS2 monolayer from n- to p-type. Our results show that the conductive properties of MoS2 deposited on SiO 2 are mainly determined by the detailed structure of the MoS 2/SiO2 interface, and suggest that doping the substrate can represent a viable strategy for engineering MoS2-based devices. © 2013 American Physical Society.

  13. Cube-like Fe3O4@SiO2@Au@Ag magnetic nanoparticles: a highly efficient SERS substrate for pesticide detection

    Science.gov (United States)

    Sun, Mei; Zhao, Aiwu; Wang, Dapeng; Wang, Jin; Chen, Ping; Sun, Henghui

    2018-04-01

    As a novel surface-enhanced Raman spectroscopic (SERS) nanocomposite, cube-like Fe3O4@SiO2@Au@Ag magnetic nanoparticles (NPs) were synthesized for the first time. Cube-like α-Fe2O3 NPs with uniform size were achieved by optimizing reaction temperature and time. Firstly, the cube-like Fe3O4@SiO2 with good dispersity was achieved by calcining α-Fe2O3@SiO2 NPs in hydrogen atmosphere at 360 °C for 2.5 h, followed by self-assembling a PEI shell via sonication. Furthermore, the Au@Ag particles were densely assembled on the Fe3O4@SiO2 NPs to form the Fe3O4@SiO2@Au@Ag composite structure via strong Ag-N interaction. The obtained nanocomposites exhibited an excellent SERS behavior, reflected by the low detection of limit (p-ATP) at the 5 × 10-14 M level. Moreover, these nanocubes were used for the detection of thiram, and the detection limit can reach 5 × 10-11 M. Meanwhile, the U.S. Environmental Protection Agency specifies that the residue in fruit must be lower than 7 ppm. Hence, the resulting substrate with high SERS activity has great practical potential applications in the rapid detection of chemical, biological, and environment pollutants with a simple portable Raman instrument at trace level.

  14. Fabrication Fe3O4/SiO2/TiO2 Nanocomposites and Degradation of Rhodamine B Dyes under UV Light Irradiation

    Directory of Open Access Journals (Sweden)

    M. P. Mazhari

    2016-01-01

    Full Text Available Recycling and reusing of catalyst is an important factor to produce capable and low cast catalysts. Silica coated magnetic nanoparticles (Fe3O4/SiO2 were synthesized via a simple sol-gel method with the aid of sonication. Fe3O4 nanoparticles. After that a layer of TiO2 was constricted by hydrolyze and condensation of Teteranormalbuthyltitanate to produce Fe3O4/SiO2/TiO2 nanocompsite. As-synthesized nanparticles were characterized with X-Ray powder Diffraction, Fourier-Transform-Infrarotspektrometer, Transition Electron Microscopy and Scanning Electron Microscopy. In this study, a new kind of Fe3O4/SiO2/TiO2 photocatalyst was prepared with the purpose of using light and inhibiting the recombination of electrons and holes. In situ treatment of Rhdamine B in water was performed using this Fe3O4/SiO2/TiO2 photocatalyst. The purpose of this research was to provide a new method and the basic data for the removal of organic pollutants in water. Fe3O4/SiO2/TiO2 nanocomposite showed enhanced photocatalytic properties as evidenced by the enhanced photodegradation of Rhodamine B under ultra violet light irradiation.

  15. Silane effects on the surface morphology and abrasion resistance of transparent SiO2/UV-curable resin nano-composites

    International Nuclear Information System (INIS)

    Hsiang, Hsing-I.; Chang, Yu-Lun; Chen, Chi-Yu; Yen, Fu-Su

    2011-01-01

    Transparent ultraviolet curable nano-composite coatings consisting of nano-sized SiO 2 and acrylate resin have been developed to improve the abrasion resistance of organic polymers. The nano-sized SiO 2 particles were surface-modified using various amounts of 3-methacryloxypropyltrimethoxysilane. The 3-methacryloxypropyltrimethoxysilane concentration effects on the surface morphology and abrasion resistance of the transparent SiO 2 /ultraviolet-curable resin nano-composites were investigated using scanning electron microscopy, atomic force microscopy, and ultraviolet-visible spectrophotometer. The results showed that as the 3-methacryloxypropyltrimethoxysilane/SiO 2 weight ratio increased from 0.2 to 0.6, the dispersion, compatibility and cross-linking density between the 3-methacryloxypropyltrimethoxysilane-modified SiO 2 particles and acrylate resin were improved, leading to an increase in abrasion resistance. However, as the 3-methacryloxypropyltrimethoxysilane/SiO 2 weight ratio was increased to 1.5, the additional 3-methacryloxypropyltrimethoxysilane may exceed that needed to fill the pores with the probability of SiO 2 nano-particles existing on the coating surface was lower than that for samples with a 3-methacryloxypropyltrimethoxysilane/SiO 2 weight ratio of 0.6. This produced a decrease in abrasion resistance.

  16. In situ synthesis and hydrothermal crystallization of nanoanatase TiO2 -SiO2 coating on aramid fabric (HTiSiAF) for UV protection.

    Science.gov (United States)

    Deng, Hui; Zhang, Hongda

    2015-10-01

    TiO2 -SiO2 thin film was prepared by sol-gel method and coated on the aramid fabric to prepare functional textiles. The aramid fabric was dipped and withdrawn in TiO2 -SiO2 gel and hydrothermal crystallization at 80(°) C, then its UV protection functionality was evaluated. The crystalline phase and the surface morphology of TiO2 -SiO2 thin film were characterized using SEM, XRD, and AFM respectively. SEM showed hydrothermal crystallization led to a homogeneous dispersion of anatase nonocrystal in TiO2 -SiO2 film, and XRD suggested the mean particle size of the formed anatase TiO2 was less than 30 nm. AFM indicated that hydrothermal treatment enhanced the crystallization of TiO2 . UV protection analysis suggested that the hydrothermally treated coated textile had a better screening property in comparison with TiO2 -SiO2 gel and native aramid fabric. © 2015 Wiley Periodicals, Inc.

  17. Translucent Insulation

    DEFF Research Database (Denmark)

    Rahbek, Jens Eg

    1998-01-01

    Two new types of translucent materials are presented. One is translucent fiber insulation and the other type is a new type of hony-comb made of Celulose-acetat. Data for the materials and calculations of energy savings when using the materials in building envelopes are presented....

  18. Electron retention in InAs-nanocrystals embedded in SiO2/Si for non-volatile memories

    International Nuclear Information System (INIS)

    Hocevar, M.; Regreny, P.; Gendry, M.; Poncet, A.; Souifi, A.

    2008-01-01

    In this paper we present the electrical characterization of an InAs nanocrystal based metal-oxide-semiconductor structure. The fabricated device behaves as a memory since the charges injected in the InAs through the SiO 2 tunnel layer (holes or electrons) have a long retention time in or by the nanocrystals. A discharging model based on direct tunnelling through a dielectric barrier has been used in order to calculate electron discharging kinetics. The results show that InAs-nanocrystals are of real interest for electron storage in non-volatile memories with an improvement of data retention for electron. (copyright 2008 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  19. Fluorine-doping concentration and fictive temperature dependence of self-trapped holes in SiO2 glasses

    International Nuclear Information System (INIS)

    Wang, R.P.; Tai, N.; Saito, K.; Ikushima, A.J.

    2005-01-01

    Fictive temperature (T f ) and fluorine (F)-doping concentration dependences of self-trapped holes (STHs) in silica glasses created by UV irradiation at low temperatures have been studied by the electron-paramagnetic-resonance method. It was found that the yield of STH decreases with decreasing T f and increasing F-doping concentration. In combination with infrared spectra measurements, the correlation among T f , F-doping concentration, Si-O bond length, and Si-O-Si bond angle was elucidated. We conclude that the change in both T f and F doping can modify the network of SiO 2 glass, leading to the suppression of the formation of STHs

  20. Atomic force microscopy measurements of topography and friction on dotriacontane films adsorbed on a SiO2 surface

    DEFF Research Database (Denmark)

    Trogisch, S.; Simpson, M.J.; Taub, H.

    2005-01-01

    We report comprehensive atomic force microscopy (AFM) measurements at room temperature of the nanoscale topography and lateral friction on the surface of thin solid films of an intermediate-length normal alkane, dotriacontane (n-C32H66), adsorbed onto a SiO2 surface. Our topographic and frictional...... their location. Above a minimum size, the bulk particles are separated from islands of perpendicularly oriented molecules by regions of exposed parallel layers that most likely extend underneath the particles. We find that the lateral friction is sensitive to the molecular orientation in the underlying...... crystalline film and can be used effectively with topographic measurements to resolve uncertainties in the film structure. We measure the same lateral friction on top of the bulk particles as on the perpendicular layers, a value that is about 2.5 times smaller than on a parallel layer. Scans on top...

  1. Linear and nonlinear intraband optical properties of ZnO quantum dots embedded in SiO2 matrix

    Directory of Open Access Journals (Sweden)

    Deepti Maikhuri

    2012-03-01

    Full Text Available In this work we investigate some optical properties of semiconductor ZnO spherical quantum dot embedded in an amorphous SiO2 dielectric matrix. Using the framework of effective mass approximation, we have studied intraband S-P, and P-D transitions in a singly charged spherical ZnO quantum dot. The optical properties are investigated in terms of the linear and nonlinear photoabsorption coefficient, the change in refractive index, and the third order nonlinear susceptibility and oscillator strengths. Using the parabolic confinement potential of electron in the dot these parameters are studied with the variation of the dot size, and the energy and intensity of incident radiation. The photoionization cross sections are also obtained for the different dot radii from the initial ground state of the dot. It is found that dot size, confinement potential, and incident radiation intensity affects intraband optical properties of the dot significantly.

  2. Electronic structure and stability of the SiO2+ dications produced in tomographic atom probe experiments

    Science.gov (United States)

    Zanuttini, D.; Blum, I.; Rigutti, L.; Vurpillot, F.; Douady, J.; Jacquet, E.; Anglade, P.-M.; Gervais, B.

    2017-10-01

    The molecular electronic states of the SiO2+ dication have been investigated in a joint theoretical and experimental analysis. The use of a tip-shaped sample for tomographic atom probe analysis offers the unique opportunity to produce and to analyze the lifetime of some excited states of this dication. The perturbation brought by the large electric field of the polarized tip along the ion trajectory is analyzed by means of molecular dynamics simulation. For the typical electric fields used in the experiment, the lowest energy triplet states spontaneously dissociate, while the lowest energy singlet states do not. We show that the emission process leads to the formation of some excited singlet state, which dissociates by means of spin-orbit coupling with lower-energy triplet states to produce specific patterns associated with Si+ + O+ and Si2+ + O dissociation channels. These patterns are recorded and observed experimentally in a correlated time-of-flight map.

  3. Structural color in porous, superhydrophilic, and self-cleaning SiO2/TiO2 Bragg stacks.

    Science.gov (United States)

    Wu, Zhizhong; Lee, Daeyeon; Rubner, Michael F; Cohen, Robert E

    2007-08-01

    Thin-film Bragg stacks exhibiting structural color have been fabricated by a layer-by-layer (LbL) deposition process involving the sequential adsorption of nanoparticles and polymers. High- and low-refractive-index regions of quarter-wave stacks were generated by calcining LbL-assembled multilayers containing TiO(2) and SiO(2) nanoparticles, respectively. The physical attributes of each region were characterized by a recently developed ellipsometric method. The structural color characteristics of the resultant nanoporous Bragg stacks could be precisely tuned in the visible region by varying the number of stacks and the thickness of the high- and low-refractive-index stacks. These Bragg stacks also exhibited potentially useful superhydrophilicity and self-cleaning properties.

  4. Effect of Ti content in the photo catalytic behavior of Fe/TiO2-SiO2 systems

    International Nuclear Information System (INIS)

    Leon C, A.; Portillo V, N.; Hernandez P, I.; May L, M.; Gonzalez R, L.; Luna P, R.; Suarez P, R.

    2013-01-01

    In this work we report the synthesis of Fe/TiO 2 -SiO 2 systems with different concentrations of TiO 2 in order to determine the influence of titanium content on the structural, textural, optical properties and their photo catalytic behavior. The materials were synthesized by the sol-gel method and their modification was carried out by incipient impregnation. All samples were characterized be means of X-ray diffraction, N 2 physisorption (Bet method), Dr-UV-Vis and Raman spectroscopy. The modifications of the structural and optical properties are discussed on the basis of long-range order reduction, suggesting the formation of highly dispersed TiO 2 species. On the other hand, it was observed that the energy of the optical band gap decreases by introducing Fe. On the basis of these phenomena, the photo catalytic activity was measured, employing the degradation of orange II azo dye as a model reaction. (Author)

  5. Negative differential resistance effect induced by metal ion implantation in SiO2 film for multilevel RRAM application

    Science.gov (United States)

    Wu, Facai; Si, Shuyao; Shi, Tuo; Zhao, Xiaolong; Liu, Qi; Liao, Lei; Lv, Hangbing; Long, Shibing; Liu, Ming

    2018-02-01

    Pt/SiO2:metal nanoparticles/Pt sandwich structure is fabricated with the method of metal ion (Ag) implantation. The device exhibits multilevel storage with appropriate R off/R on ratio, good endurance and retention properties. Based on transmission electron microscopy and energy dispersive spectrometer analysis, we confirm that Pt nanoparticles are spurted into SiO2 film from Pt bottom electrode by Ag implantation; during electroforming, the local electric field can be enhanced by these Pt nanoparticles, meanwhile the Ag nanoparticles constantly migrate toward the Pt nanoparticles. The implantation induced nanoparticles act as trap sites in the resistive switching layer and play critical roles in the multilevel storage, which is evidenced by the negative differential resistance effect in the current–voltage (I–V) measurements.

  6. Phytic acid derived bioactive CaO-P2O5-SiO2 gel-glasses.

    Science.gov (United States)

    Li, Ailing; Qiu, Dong

    2011-12-01

    The possibility of using phytic acid as a precursor to synthesize CaO-P(2)O(5)-SiO(2) glasses by sol-gel method has been explored and the pseudo ternary phase diagram has been established. It was shown that gel-glasses over a broader range of compositions could be prepared compared to other phosphorus precursors or melt-quenching method. Furthermore, phytic acid was found to assist calcium being incorporated into glass networks. In vitro tests in simulated body fluid (SBF) were performed on the above gel-glasses and it was found that they were bioactive over a much broader compositional range especially at high phosphate content, thus enabling one to design bioactive materials with various degradation rates by adjusting the phosphate content.

  7. Removal of Hazardous Pollutants from Wastewaters: Applications of TiO2-SiO2 Mixed Oxide Materials

    Directory of Open Access Journals (Sweden)

    Shivatharsiny Rasalingam

    2014-01-01

    Full Text Available The direct release of untreated wastewaters from various industries and households results in the release of toxic pollutants to the aquatic environment. Advanced oxidation processes (AOP have gained wide attention owing to the prospect of complete mineralization of nonbiodegradable organic substances to environmentally innocuous products by chemical oxidation. In particular, heterogeneous photocatalysis has been demonstrated to have tremendous promise in water purification and treatment of several pollutant materials that include naturally occurring toxins, pesticides, and other deleterious contaminants. In this work, we have reviewed the different removal techniques that have been employed for water purification. In particular, the application of TiO2-SiO2 binary mixed oxide materials for wastewater treatment is explained herein, and it is evident from the literature survey that these mixed oxide materials have enhanced abilities to remove a wide variety of pollutants.

  8. Hydrofluoric acid-assisted bonding of diatoms with SiO2-based substrates for microsystem application

    International Nuclear Information System (INIS)

    Zhang, Deyuan; Pan, Junfeng; Cai, Jun; Wang, Yu; Jiang, Yonggang; Jiang, Xinggang

    2012-01-01

    Diatom, with delicate three-dimensional porous structures and texture, has a promising application in micro-nanotechnology especially biosensing. In order to achieve a diatom-based compound substrate, a fabrication technique is developed for hydrofluoric acid (HF) bonding of diatom with SiO 2 -based substrate at a temperature as low as 80 °C. The bonding conditions are optimized with various HF concentrations and applied pressure. The optimized HF concentration is found to be in the range of 0.8% to 1.2% and applied pressure is from 0.4.0 MPa to 0.6.0 MPa. The morphological integrity and nano-microscale substructures of the diatoms after bonding are characterized. The bonding strength is approximately 0.435 MPa. (paper)

  9. Formation and characterization of nanoparticles formed by sequential ion implantation of Au and Co into SiO2

    International Nuclear Information System (INIS)

    Kluth, P.; Hoy, B.; Johannessen, B.; Dunn, S.G.; Foran, G.J.; Ridgway, M.C.

    2007-01-01

    Nanoparticles (NPs) were formed by sequential ion implantation of Au and Co into thin SiO 2 . After Au implantation and annealing, Co implantations were carried out at room temperature (RT) and 400 deg. C, respectively, with no subsequent annealing. The NPs were investigated by means of Rutherford backscattering spectroscopy (RBS), transmission electron microscopy (TEM) and extended X-ray absorption fine structure spectroscopy (EXAFS). TEM shows the formation of Co-Au core-shell NPs for the Co implantation at 400 deg. C. EXAFS measurements indicate significant strain in the NPs and a bond-length expansion of the Co-Co bonds in the NP core with a concomitant contraction of the Au-Au bonds in the Au shells. NPs are also observed by TEM for the Co implantation performed at RT, however, a lack of crystallinity is apparent from electron diffraction and EXAFS measurements

  10. Size dependence of non-linear optical properties of SiO2 thin films containing InP nanocrystals

    Science.gov (United States)

    Zheng, M. J.; Zhang, L. D.; Zhang, J. G.

    SiO2 composite thin films containing InP nanocrystals were fabricated by radio-frequency magnetron co-sputtering technique. The microstructure of the composite thin films was characterized by X-ray diffraction and Raman spectrum. The optical absorption band edges exhibit marked blueshift with respect to bulk InP due to strong quantum confinement effect. Non-linear optical absorption and non-linear optical refraction were studied by a Z-scan technique using a single Gaussian beam of a He-Ne laser (632.8 nm). We observed the saturation absorption and two-photon absorption in the composite films. An enhanced third-order non-linear optical absorption coefficient and non-linear optical refractive index were achieved in the composite films. The nonlinear optical properties of the films display the dependence on InP nanocrystals size.

  11. Van der Waals epitaxial growth of MoS2 on SiO2/Si by chemical vapor deposition

    KAUST Repository

    Cheng, Yingchun

    2013-01-01

    Recently, single layer MoS2 with a direct band gap of 1.9 eV has been proposed as a candidate for two dimensional nanoelectronic devices. However, the synthetic approach to obtain high-quality MoS2 atomic thin layers is still problematic. Spectroscopic and microscopic results reveal that both single layers and tetrahedral clusters of MoS2 are deposited directly on the SiO2/Si substrate by chemical vapor deposition. The tetrahedral clusters are mixtures of 2H- and 3R-MoS2. By ex situ optical analysis, both the single layers and tetrahedral clusters can be attributed to van der Waals epitaxial growth. Due to the similar layered structures we expect the same growth mechanism for other transition-metal disulfides by chemical vapor deposition. © 2013 The Royal Society of Chemistry.

  12. A novel composite of SiO2-coated graphene oxide and molecularly imprinted polymers for electrochemical sensing dopamine.

    Science.gov (United States)

    Zeng, Yanbo; Zhou, Ying; Kong, Lei; Zhou, Tianshu; Shi, Guoyue

    2013-07-15

    A novel imprinting route based on graphene oxide (GO) was proposed for preparing a composite of SiO2-coated GO and molecularly imprinted polymers (GO/SiO2-MIPs). In this route, SiO2-coated GO sheets were synthesized in a water-alcohol mixture with sol-gel technique. Prior to polymerization, the vinyl groups were introduced onto the surface of GO/SiO2 through chemical modification with γ-methacryloxypropyl trimethoxysilane (γ-MAPS), which can direct the selective polymerization on the GO/SiO2 surface. Then a novel composite of GO/SiO2-MIPs was successfully obtained by the copolymerization in presence of vinyl groups functionalized GO/SiO2, dopamine (DA), methacrylic acid and ethylene glycol dimethacrylate. The GO/SiO2-MIPs composite was characterized by FTIR, TGA, Raman spectroscopy, SEM and AFM. The properties such as special binding, adsorption dynamics and selective recognition ability using differential pulse voltammetry (DPV) were evaluated. The DPV current response of GO/SiO2-MIPs sensor was nearly 3.2 times that of the non-imprinted polymers (NIPs). In addition, the GO/SiO2-MIPs sensor could recognize DA from its relatively similar molecules of norepinephrine and epinephrine, while the sensors based on GO/SiO2-NIPs and vinyl groups functionalized GO/SiO2 did not have the ability. The GO/SiO2-MIPs sensor had a wide linear range over DA concentration from 5.0 × 10(-8) to 1.6 × 10(-4)M with a detection limit of 3.0 × 10(-8)M (S/N=3). The sensor based on this novel imprinted composite was applied to the determination of DA in injections and human urine samples with satisfactory results. Copyright © 2013 Elsevier B.V. All rights reserved.

  13. Annealing temperature effect on structure and electrical properties of films formed of Ge nanoparticles in SiO2

    International Nuclear Information System (INIS)

    Stavarache, Ionel; Lepadatu, Ana-Maria; Stoica, Toma; Ciurea, Magdalena Lidia

    2013-01-01

    Ge–SiO 2 films with high Ge/Si atomic ratio of about 1.86 were obtained by co-sputtering of Ge and SiO 2 targets and subsequently annealed at different temperatures between 600 and 1000 °C in a conventional furnace in order to show how the annealing process influences the film morphology concerning the Ge nanocrystal and/or amorphous nanoparticle formation and to study their electrical behaviour. Atomic force microscopy (AFM) imaging, Raman spectroscopy and electrical conductance measurements were performed in order to find out the annealing effect on the film surface morphology, as well as the Ge nanoparticle formation in correlation with the hopping conductivity of the films. AFM images show that the films annealed at 600 and 700 °C present a granular surface with particle height of about 15 nm, while those annealed at higher temperatures have smoother surface. The Raman investigations evidence Ge nanocrystals (including small ones) coexisting with amorphous Ge in the films annealed at 600 °C and show that almost all Ge is crystallized in the films annealed at 700 °C. The annealing at 800 °C disadvantages the Ge nanocrystal formation due to the strong Ge diffusion. This transition in Ge nanocrystals formation process by annealing temperature increase from 700 to 800 °C revealed by AFM and Raman spectroscopy measurements corresponds to a change in the electrical transport mechanism. Thus, in the 700 °C annealed films, the current depends on temperature according to a T −1/2 law which is typical for a tunnelling mechanism between neighbour Ge nanocrystals. In the 800 °C annealed films, the current–temperature characteristic has a T −1/4 dependence showing a hopping mechanism within an electronic band of localized states related to diffused Ge in SiO 2 .

  14. Enhanced Formation of Si Nanocrystals in SiO2 by Light-Filtering Rapid Thermal Annealing

    Science.gov (United States)

    Chen, Xiaobo; Chen, Guangping

    2015-04-01

    In this work, silicon-rich oxide (SRO) films with designed thickness of 100 nm were deposited by a bipolar pulse and radio frequency magnetron co-sputtering. For comparison, the samples were then treated in a nitrogen atmosphere by conventional rapid thermal annealing (CRTA) or light-filtering rapid thermal annealing (LRTA) at 900-1100°C for 2 min. Raman spectra, grazing incident X-ray diffraction (XRD), transmission electron microscopy (TEM), Hall measurements, and current density-voltage measurements were carried out to analyze the microstructural and electrical properties of samples. Compared with the control sample using CRTA method, the crystalline volume fraction and number density of Si nanocrystals (SiNCs) in silicon oxide prepared by LRTA were greatly increased. The quantum effects of the short wave-length light (less than 800 nm) of these tungsten halogen lamps during the rapid thermal annealing process have negative effects on the formation of SiNCs in SiO2 films. SiNCs with crystal volume fraction of 73%, average size of 2.53 nm, and number density of 1.1 × 1012 cm-2 embedded in the amorphous SiO2 matrix can be formed by LRTA at 1100°C. Enhancement of more than one order of magnitude in conductivity and higher current density were obtained from the LRTA annealed sample compared to the CRTA annealed sample. The improvements in conductivity and current density were attributed to the high density SiNCs. Our results show that the LRTA method is a suitable annealing tool for the formation of SiNC in thin SiOx films.

  15. Cryogenic Properties of Inorganic Insulation Materials for ITER Magnets: A Review

    International Nuclear Information System (INIS)

    Simon, N.J.

    1994-01-01

    Results of a literature search on the cryogenic properties of candidate inorganic insulators for the ITER TF magnets are reported. The materials investigated include: Al 2 O 3 , AlN, MgO, porcelain, SiO 2 , MgAl 2 O 4 , ZrO 2 , and mica. A graphical presentation is given of mechanical, elastic, electrical, and thermal properties between 4 and 300 K. A companion report reviews the low temperature irradiation resistance of these materials

  16. A Fluorescent Sensor for Zinc Detection and Removal Based on Core-Shell Functionalized Fe3O4@SiO2 Nanoparticles

    International Nuclear Information System (INIS)

    Xu, Y.; Zhou, Y.; Ma, W.; Wang, Sh.; Xu, Y.; Zhou, Y.; Ma, W.

    2013-01-01

    The magnetic Fe 3 O 4 @SiO 2 nanoparticles (NPs) functionalized with 8-chloroacetylaminoquinoline as a fluorescent sensor for detection and removal of Zn 2+ have been synthesized. The core-shell structures of the nanoparticles and chemical composition have been confirmed by TEM, XRD, FTIR, and XPS techniques. The addition of functionalized Fe3O4@SiO2 NPs into the acetonitrile solution of Zn 2+ had an effect of visual color change as well as significant fluorescent enhancement. High-saturated magnetizations (24.7 emu/g) of functionalized Fe 3 O 4 @SiO 2 NPs could help to separate the metal ions from the aqueous solution. The magnetic sensor exhibited high removal efficiency towards Zn 2+ (92.37%). In this work, we provided an easy and efficient route to detect Zn 2+ and simultaneously remove Zn 2+ .

  17. Influence of CaCO3 and SiO2 additives on magnetic properties of M-type Sr ferrites

    Science.gov (United States)

    Huang, Ching-Chien; Jiang, Ai-Hua; Hung, Yung-Hsiung; Liou, Ching-Hsuan; Wang, Yi-Chen; Lee, Chi-Ping; Hung, Tong-Yin; Shaw, Chun-Chung; Kuo, Ming-Feng; Cheng, Chun-Hu

    2018-04-01

    An experiment was carried out to investigate the influence of CaCO3 and SiO2 additives on the magnetic and physical properties of M-type Sr ferrites by changing experimental parameters such as the additive composition and Ca/Si ratio. Specimens were prepared by conventional ceramic techniques. It was found that the magnetic properties (Br = 4.42 kG, iHc = 3.32 kOe and (BH)max = 4.863 MGOe) were considerably improved upon adding CaCO3 = 1.1% and SiO2 = 0.4 wt% together with Co3O4, and the mechanical properties thereof were acceptable for motor applications. It was revealed that CaCO3 and SiO2 additives led to an upswing in the magnetic properties via the enhancement of uniform grain growth, particle alignment, and the densification of Sr ferrite.

  18. Study of absorption, emission and EDS properties of Pr3+ incorporated in a SiO2 matrix by sol-gel method

    International Nuclear Information System (INIS)

    Gómez-Miranda, M; Fonseca, R Sosa; Ordoñez, C Velásquez

    2015-01-01

    The optical response of the Pr 3+ ions doped monolith of SiO 2 prepared by sol-gel method was investigated by absorption and emission spectra. The absorption spectrum shows some typical lines of Pr 3+ , with these data was made the diagram levels corresponding to SiO 2 : Pr 3+ . The emission spectra were taken at 225 nm and 240 nm of wavelength of excitation was measured. In that there are reabsorption line at 423 of the Pr 3+ ions in the emission host, that means that some kind of host-ion interactions exist. Red and NIR emission at 612 nm, 652 nm, 711 and 728 nm, respectively, from Pr 3+ ions in SiO 2 was observed. The transition 1 S 0 → 3 P 2 at 425 nm is observed because an effective radiative transfer between the silicate glasses host and the praseodymium ions is observed and discussed

  19. Corrosion Behavior of Nickel Alloy (ASTM A 494 M) Reinforced with Fused SiO2 Chilled Metal Matrix Composites (MMCs) for Marine Applications

    Science.gov (United States)

    Hemanth, Joel, Dr.

    2017-08-01

    This paper presents the results obtained and the discussions made from a series of corrosion experiments involving Nickel alloy (ASTM A 494 M) reinforced with fused SiO2, size of the particles dispersed varies from 80-120 µm and amount of addition varies from 3 to 12 wt.% in steps of 3 wt.%. The resulting chilled MMCs are solidified under the influence of copper chill of 25 mm thickness to study the effect of corrosion behavior. Corrosion resistance was found to increase significantly with increase in SiO2 content in chilled MMCs. Nevertheless, even with high SiO2 content corrosion attack ie., pitting was found to be most severe during the initial stages of each test but it invariably decreased to a very low value in the later stages, due to the formation of an adherent protective layer on the MMCs developed.

  20. SiO2@MgO nanoparticles templated mesoporous carbon with rich electro-active oxygenic functionalities and enhanced supercapacitive performances

    Science.gov (United States)

    Tian, Zhengfang; Duan, Shuyi; Shen, Yu; Xie, Mingjiang; Guo, Xuefeng

    2017-06-01

    As a member of carbon-based materials, ordered mesoporous carbon (OMC) still suffers from poor capacity for supercapacitive applications. Functionalization the skeleton with pseudocapacitive functionalities is an efficient way to enhance the capacity of OMCs. Herein, a designed SiO2@MgO nanoparticle with uniform diameters was employed as template towards the synthesis of pseudocapacitive oxygen functionalized OMC. The obtained carbons possess ordered mesoporous structure, large surface area, and rich pseudocapacitive oxygen species. As electrode for supercapacitor in 1.0 M H2SO4, the SiO2@MgO templated OMC achieves higher capacitance (257 F/g) than pure SiO2 templated OMC (180 F/g), surfactant templated OMC (152 F/g) and commercial activated carbon (110 F/g) owing to the high pseudocapacitive oxygen functionalities, providing more capacity by reversible Faradaic reaction.