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Sample records for sinterable aluminum nitride

  1. Effects of various additives on sintering of aluminum nitride

    Science.gov (United States)

    Komeya, K.; Inoue, H.; Tsuge, A.

    1982-01-01

    Effects of thirty additives on sintering A/N were investigated. The addition of alkali earth oxides and rare earth oxides gave fully densified aluminum nitride. This is due to the formation of nitrogen-containing aluminate liquid in the system aluminum nitride-alkali earth oxides or rare earth oxides. Microstructural studies of the sintered specimens with the above two types of additives suggested that the densification was due to the liquid phase sintering. Additions of silicon compounds resulted in poor densification by the formation of highly refractory compounds such as A/N polytypes.

  2. Process for the production of metal nitride sintered bodies and resultant silicon nitride and aluminum nitride sintered bodies

    Science.gov (United States)

    Yajima, S.; Omori, M.; Hayashi, J.; Kayano, H.; Hamano, M.

    1983-01-01

    A process for the manufacture of metal nitride sintered bodies, in particular, a process in which a mixture of metal nitrite powders is shaped and heated together with a binding agent is described. Of the metal nitrides Si3N4 and AIN were used especially frequently because of their excellent properties at high temperatures. The goal is to produce a process for metal nitride sintered bodies with high strength, high corrosion resistance, thermal shock resistance, thermal shock resistance, and avoidance of previously known faults.

  3. Silicon nitride-aluminum oxide solid solution (SiAION) formation and densification by pressure sintering

    Science.gov (United States)

    Yeh, H. C.; Sanders, W. A.; Fiyalko, J. L.

    1975-01-01

    Stirred-ball-mill-blended Si3N4 and Al2O3 powders were pressure sintered in order to investigate the mechanism of solid solution formation and densification in the Si3N4-Al2O3 system. Powder blends with Si3N4:Al2O3 mole ratios of 4:1, 3:2, and 2:3 were pressure sintered at 27.6-MN/sq m pressure at temperatures to 17000 C (3090 F). The compaction behavior of the powder blends during pressure sintering was determined by observing the density of the powder compact as a function of temperature and time starting from room temperature. This information, combined with the results of X-ray diffraction and metallographic analyses regarding solutioning and phase transformation phenomena in the Si3N4-Al2O3 system, was used to describe the densification behavior.

  4. Fabrication and characterization of aluminum nitride/boron nitride nanocomposites by carbothermal reduction and nitridation of aluminum borate powders.

    Science.gov (United States)

    Kusunose, Takafumi; Sakayanagi, Nobuaki; Sekino, Tohru; Ando, Yoichi

    2008-11-01

    In order to fabricate aluminum nitride/boron nitride (AIN/BN) nanocomposites by pressureless sintering, the present study investigated the synthesis of AIN-BN nanocomposite powders by carbothermal reduction and nitridation of aluminum borate powders. Homogeneous mixtures of alumina (Al2O3), boric acid (H3BO3), and carbon powder were used to synthesize AIN/BN nanocomposite powders containing 10 and 20 vol% BN. Aluminum borate was produced by reacting Al2O3 and B2O3 above 800 degrees C, and AIN and turbostratic BN (t-BN) were produced by reacting aluminum borate with carbon powder and nitrogen gas at 1500 degrees C. Carbothermal reduction followed by nitridation yielded an AIN/BN nanocomposite powder composed of nanosized AIN and t-BN. By pressureless sintering nanocomposite AIN/BN powders containing 5 wt% Y22O3, AIN/BN nanocomposites were obtained without compromising the high thermal conductivity and high hardness.

  5. Aluminum nitride grating couplers.

    Science.gov (United States)

    Ghosh, Siddhartha; Doerr, Christopher R; Piazza, Gianluca

    2012-06-10

    Grating couplers in sputtered aluminum nitride, a piezoelectric material with low loss in the C band, are demonstrated. Gratings and a waveguide micromachined on a silicon wafer with 600 nm minimum feature size were defined in a single lithography step without partial etching. Silicon dioxide (SiO(2)) was used for cladding layers. Peak coupling efficiency of -6.6 dB and a 1 dB bandwidth of 60 nm have been measured. This demonstration of wire waveguides and wideband grating couplers in a material that also has piezoelectric and elasto-optic properties will enable new functions for integrated photonics and optomechanics.

  6. Synthesis and Processing of Nanocrystalline Aluminum Nitride

    OpenAIRE

    Duarte, Matthew Albert

    2016-01-01

    Synthesis, processing and characterization of nanocrystalline aluminum nitride has been systematically studied. Non-carbon based gas nitridation was used to reduce nanocrystalline γ-alumina, having a grain size of ~80 nm. Single phase aluminum nitride powder was obtained at firing temperatures of 1200°C. Further processing of AlN powders was performed by CAPAD (Current Activated Pressure Assisted Densification) to obtain dense single phase aluminum nitride. Dense bulk aluminum nitride was ob...

  7. Superconducting structure with layers of niobium nitride and aluminum nitride

    Science.gov (United States)

    Murduck, J.M.; Lepetre, Y.J.; Schuller, I.K.; Ketterson, J.B.

    1989-07-04

    A superconducting structure is formed by depositing alternate layers of aluminum nitride and niobium nitride on a substrate. Deposition methods include dc magnetron reactive sputtering, rf magnetron reactive sputtering, thin-film diffusion, chemical vapor deposition, and ion-beam deposition. Structures have been built with layers of niobium nitride and aluminum nitride having thicknesses in a range of 20 to 350 Angstroms. Best results have been achieved with films of niobium nitride deposited to a thickness of approximately 70 Angstroms and aluminum nitride deposited to a thickness of approximately 20 Angstroms. Such films of niobium nitride separated by a single layer of aluminum nitride are useful in forming Josephson junctions. Structures of 30 or more alternating layers of niobium nitride and aluminum nitride are useful when deposited on fixed substrates or flexible strips to form bulk superconductors for carrying electric current. They are also adaptable as voltage-controlled microwave energy sources. 8 figs.

  8. Aluminum nitride insulating films for MOSFET devices

    Science.gov (United States)

    Lewicki, G. W.; Maserjian, J.

    1972-01-01

    Application of aluminum nitrides as electrical insulator for electric capacitors is discussed. Electrical properties of aluminum nitrides are analyzed and specific use with field effect transistors is defined. Operational limits of field effect transistors are developed.

  9. Sintering of silicon nitride ceramics with magnesium silicon nitride and yttrium oxide as sintering aids

    Energy Technology Data Exchange (ETDEWEB)

    Jiang, J; Xu, J Y [Shanghai Institute of Technology, Shanghai 200235 (China); Peng, G H [Guangxi Normal University, Guilin 541004, Guangxi (China); Zhuang, H R; Li, W L; Xu, S Y [Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050 (China); Mao, Y J, E-mail: guojianjiang@sit.edu.cn [Shanghai University, Shanghai 200444 (China)

    2011-10-29

    Silicon nitride (Si{sub 3}N{sub 4}) ceramics had been produced through pressureless sintering and hot-pressing sintering with MgSiN{sub 2}-Y{sub 2}O{sub 3} or only MgSiN{sub 2} as sintering aids. The influences of the amount of MgSiN{sub 2} and Y{sub 2}O{sub 3} and sintering methods on the properties of Si{sub 3}N{sub 4} ceramics were investigated. The results show that the bend strength of Si{sub 3}N{sub 4} ceramic fabricated through pressureless sintering at 1820 deg. C for 4 h with 5.6 wt.% MgSiN{sub 2}-15.8 wt.% Y{sub 2}O{sub 3} as sintering additive could achieve 839 MPa. However, the bend strength of Si{sub 3}N{sub 4} ceramic produced by hot-pressing sintering at 1750 deg. C for 1 h under uniaxial pressure of 20 MPa with 4.76 wt.% MgSiN{sub 2} was 1149 MPa. The thermal conductivity of the Si{sub 3}N{sub 4} ceramic 2 3 4 could reach to 129 W{center_dot}m{sup -1{center_dot}}K{sup 1}. The present work demonstrated that MgSiN{sub 2} aids and hot-pressing sintering were effective to improve the thermal conductivity of Si{sub 3}N{sub 4} ceramic.

  10. Numerical Simulation of Ballistic Impact of Layered Aluminum Nitride Ceramic

    Science.gov (United States)

    2015-09-01

    ARL-TR-7416 ● SEP 2015 US Army Research Laboratory Numerical Simulation of Ballistic Impact of Layered Aluminum Nitride Ceramic...of Ballistic Impact of Layered Aluminum Nitride Ceramic by JD Clayton Weapons and Materials Research Directorate, ARL...Numerical Simulation of Ballistic Impact of Layered Aluminum Nitride Ceramic 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT NUMBER 6

  11. Pressureless Reaction Sintering of AlON using Aluminum Orthophosphate as a Transient Liquid Phase

    Energy Technology Data Exchange (ETDEWEB)

    Michael Bakas; Henry Chu

    2009-01-01

    Use of aluminum oxynitride (AlON) in transparent armor systems has been difficult due to the expense and limitations of the processing methods currently necessary to achieve transparency. Development of a pressureless processing method based on direct reaction sintering of alumina and aluminum nitride powders would reduce costs and provide a more flexible and practical manufacturing method. It may be possible to develop such a processing method using liquid phase sintering; as long as the liquid phase does not remain in the final sample. AlPO4 forms a liquid phase with Al2O3 and AlN at the temperatures required to sinter AlON, and slowly decomposes into P2O5 and alumina. Therefore, it was investigated as a possible transient liquid phase for reaction-sintered AlON. Small compacts of alumina and aluminum nitride with up to of 15wt% AlPO4 additive were pressed and sintered. It was found that AlPO4 formed the requisite transient liquid phase, and it was possible to adjust the process to produce AlON samples with good transmission and densities of 3.66-3.67 g/cc. XRD confirmed the samples formed were AlON, with no trace of any remaining phosphate phases or excess alumina or aluminum nitride. Based on the results, it was concluded that AlPO4 could be utilized as a transient liquid phase to improve the density and transmission of AlON produced by pressureless reaction sintering.

  12. The Resource-Saving Technology of Aluminum Nitride Obtaining During Combustion of Aluminum Nanopowder in Air

    OpenAIRE

    Ilyin, Aleksandr Petrovich; Mostovshchikov, Andrey Vladimirovich; Root, Lyudmila Olegovna

    2016-01-01

    The resource-saving technology of aluminum nitride obtaining during the combustion of aluminum nanopowder in air has been analyzed in the article. The investigation of the crystal phases of aluminum nanopowder combustion products obtained under the magnetic field exposure has been made. The experimental results showed the increase of aluminum nitride content up to 86 wt. % in comparison with the aluminum nitride content in combustion products without any exposure. The mechanism of aluminum ni...

  13. Characterization of plasma nitrided layers produced on sintered iron

    Directory of Open Access Journals (Sweden)

    Marcos Alves Fontes

    2014-07-01

    Full Text Available Plasma nitriding is a thermo-physical-chemical treatment process, which promotes surface hardening, caused by interstitial diffusion of atomic nitrogen into metallic alloys. In this work, this process was employed in the surface modification of a sintered ferrous alloy. Scanning electron microscopy (SEM, X-ray diffraction (XRD analyses, and wear and microhardness tests were performed on the samples submitted to ferrox treatment and plasma nitriding carried out under different conditions of time and temperature. The results showed that the nitride layer thickness is higher for all nitrided samples than for ferrox treated samples, and this layer thickness increases with nitriding time and temperature, and temperature is a more significant variable. The XRD analysis showed that the nitrided layer, for all samples, near the surface consists in a mixture of γ′-Fe4N and ɛ-Fe3N phases. Both wear resistance and microhardness increase with nitriding time and temperature, and temperature influences both the characteristics the most.

  14. The Resource-Saving Technology of Aluminum Nitride Obtaining During Combustion of Aluminum Nanopowder in Air

    Directory of Open Access Journals (Sweden)

    Ilyin Alexander

    2016-01-01

    Full Text Available The resource-saving technology of aluminum nitride obtaining during the combustion of aluminum nanopowder in air has been analyzed in the article. The investigation of the crystal phases of aluminum nanopowder combustion products obtained under the magnetic field exposure has been made. The experimental results showed the increase of aluminum nitride content up to 86 wt. % in comparison with the aluminum nitride content in combustion products without any exposure. The mechanism of aluminum nitride formation and stabilization in air was due to the oxygen molecules deactivation by light emission during combustion.

  15. Synthesis and Optimization of the Sintering Kinetics of Actinide Nitrides

    International Nuclear Information System (INIS)

    Butt, Drryl P.; Jaques, Brian

    2009-01-01

    Research conducted for this NERI project has advanced the understanding and feasibility of nitride nuclear fuel processing. In order to perform this research, necessary laboratory infrastructure was developed; including basic facilities and experimental equipment. Notable accomplishments from this project include: the synthesis of uranium, dysprosium, and cerium nitrides using a novel, low-cost mechanical method at room temperature; the synthesis of phase pure UN, DyN, and CeN using thermal methods; and the sintering of UN and (U x , Dy 1-x )N (0.7 (le) X (le) 1) pellets from phase pure powder that was synthesized in the Advanced Materials Laboratory at Boise State University.

  16. Synthesis and Optimization of the Sintering Kinetics of Actinide Nitrides

    Energy Technology Data Exchange (ETDEWEB)

    Drryl P. Butt; Brian Jaques

    2009-03-31

    Research conducted for this NERI project has advanced the understanding and feasibility of nitride nuclear fuel processing. In order to perform this research, necessary laboratory infrastructure was developed; including basic facilities and experimental equipment. Notable accomplishments from this project include: the synthesis of uranium, dysprosium, and cerium nitrides using a novel, low-cost mechanical method at room temperature; the synthesis of phase pure UN, DyN, and CeN using thermal methods; and the sintering of UN and (Ux, Dy1-x)N (0.7 ≤ X ≤ 1) pellets from phase pure powder that was synthesized in the Advanced Materials Laboratory at Boise State University.

  17. Mechanisms of dynamic deformation and dynamic failure in aluminum nitride

    International Nuclear Information System (INIS)

    Hu Guangli; Chen, C.Q.; Ramesh, K.T.; McCauley, J.W.

    2012-01-01

    Uniaxial quasi-static, uniaxial dynamic and confined dynamic compression experiments have been performed to characterize the failure and deformation mechanisms of a sintered polycrystalline aluminum nitride using a servohydraulic machine and a modified Kolsky bar. Scanning electron microscopy and transmission electron microscopy (TEM) are used to identify the fracture and deformation mechanisms under high rate and high pressure loading conditions. These results show that the fracture mechanisms are strong functions of confining stress and strain rate, with transgranular fracture becoming more common at high strain rates. Dynamic fracture mechanics and micromechanical models are used to analyze the observed fracture mechanisms. TEM characterization of fragments from the confined dynamic experiments shows that at higher pressures dislocation motion becomes a common dominant deformation mechanism in AlN. Prismatic slip is dominant, and pronounced microcrack–dislocation interactions are observed, suggesting that the dislocation plasticity affects the macroscopic fracture behavior in this material under high confining stresses.

  18. Defect reduction in seeded aluminum nitride crystal growth

    Energy Technology Data Exchange (ETDEWEB)

    Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Stack, Glen A.

    2017-04-18

    Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

  19. Defect reduction in seeded aluminum nitride crystal growth

    Energy Technology Data Exchange (ETDEWEB)

    Bondokov, Robert T.; Morgan, Kenneth E.; Schowalter, Leo J.; Slack, Glen A.

    2017-06-06

    Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density .ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

  20. Defect reduction in seeded aluminum nitride crystal growth

    Science.gov (United States)

    Bondokov, Robert T.; Schowalter, Leo J.; Morgan, Kenneth; Slack, Glen A; Rao, Shailaja P.; Gibb, Shawn Robert

    2017-09-26

    Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density.ltoreq.100 cm.sup.-2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

  1. The preparation and properties of aluminum nitride films

    Science.gov (United States)

    Chu, T. L.; Kelm, R. W., Jr.

    1975-01-01

    Aluminum nitride films have been deposited on silicon substrates at 800-1200 C by the pyrolysis of an aluminum trichloride-ammonia complex, AlCl3.3NH3, in a gas flow system. The deposit was transparent, tightly adherent to the substrate, and was confirmed to be aluminum nitride by X-ray and electron diffraction techniques. The deposited aluminum nitride films were found to be polycrystalline with the crystallite size increasing with increasing temperature of deposition. Other properties of aluminum nitride films relevant to device applications, including density, refractive index, dissolution rate, dielectric constant, and masking ability, have been determined. These properties indicate that aluminum nitride films have potential as a dielectric in electronic devices.

  2. Photorefractive effect in undoped aluminum nitride.

    Science.gov (United States)

    Nagai, Toru; Fujimura, Ryushi; Shimura, Tsutomu; Kuroda, Kazuo

    2010-07-01

    We report our observation of the photorefractive effect in undoped aluminum nitride. We measured the coupling constant and the formation rate as a function of pump intensity at a wavelength of 405 nm in a two-wave mixing experiment. The photorefractive gain coefficient was 0.47 cm(-1) at I = 6.9 W/cm(2), and the actual saturated value was probably larger than this. The time constant was 59 ms at I = 1.0 W/cm(2). In addition to a refractive index grating, an absorption grating was also formed, which is attributed mainly to an ionized trap density modulation process.

  3. Wettability of Pyrolytic Boron Nitride by Aluminum

    Science.gov (United States)

    Chiaramonte, Francis P.; Rosenthal, Bruce N.

    1991-01-01

    The wetting of pyrolytic boron nitride by molten 99.9999 percent pure aluminum was investigated by using the sessile drop method in a vacuum operating at approximately 660 micro-Pa at temperatures ranging from 700 to 1000 C. The equilibrium contact angle decreased with an increase in temperature. For temperatures at 900 C or less, the equilibrium contact angle was greater than 90 deg. At 1000 C a nonwetting-to-wetting transition occurred and the contact angle stabilized at 49 deg.

  4. Re-sintered boron-rich polycrystalline cubic boron nitride and method for making same

    Energy Technology Data Exchange (ETDEWEB)

    Lavens, T.R.; Corrigan, F.R.; Shott, R.L.; Bovenkerk, H.P.

    1987-06-16

    A method is described for making re-sintered polycrystalline cubic boron nitride (CBN) which comprises: (a) placing sintered substantially catalyst-free boron-rich polycrystalline cubic boron nitride particles in a high pressure/high temperature apparatus, the particles being substantially free of sintering inhibiting impurities; (b) subjecting the boron-rich cubic boron nitride particles to a pressure and a temperature adequate to re-sinter the particles, the temperature being below the CBN reconversion temperature; (c) maintaining the temperature and pressure for a time sufficient to re-sinter the boron-rich cubic boron nitride particles in the apparatus, and (d) recovering the re-sintered polycrystalline cubic boron nitride from the apparatus.

  5. Aluminum and aluminum nitride formation in sapphire by ion beam synthesis

    OpenAIRE

    Stritzker, Bernd

    2000-01-01

    Aluminum and aluminum nitride formation in sapphire by ion beam synthesis / J. K. N. Lindner, W. Schlosser, and B. Stritzker. - In: Nuclear instruments & methods in physics research. B. 166. 2000. S. 133-139

  6. Processing of Nanocrystalline Nitrides and Oxide Composites

    National Research Council Canada - National Science Library

    Ying, Jackie

    1998-01-01

    We have recently begun to investigate the chemical composition, specifically oxygen contamination, and sintering behavior of the nanocrystalline aluminum nitride synthesized in the forced flow reactor...

  7. Preparation and characterization of solid-state sintered aluminum ...

    Indian Academy of Sciences (India)

    Preparation and characterization of solid-state sintered aluminum-doped zinc oxide with different alumina contents. YU-HSIEN CHOU. ∗. , J L H CHAU, W L WANG, C S CHEN, S H WANG and C C YANG. Nanopowder and Thin Film Technology Centre, ITRI–South, Industrial Technology Research Institute, Tainan 70955,.

  8. Nanoparticles of wurtzite aluminum nitride from the nut shells

    Directory of Open Access Journals (Sweden)

    S. B. Qadri

    2016-11-01

    Full Text Available Nanoparticles of aluminum nitride were produced from a thermal treatment of a mixture of aluminum oxide (Al2O3 and shells of almond, cashew, coconuts, pistachio, and walnuts in a nitrogen atmosphere at temperatures in excess of 1450 °C. By selecting the appropriate ratios of each nut powder to Al2O3, it is shown that stoichiometric aluminum nitride can be produced by carbo-thermal reduction in nitrogen atmosphere. Using x-ray diffraction analysis, Raman scattering and Fourier Transform Infrared spectroscopy, it is demonstrated that aluminum nitride consists of pure wurtzite phase. Transmission electron microscopy showed the formation of nanoparticles and in some cases nanotubes of AlN.

  9. Fluorescent lighting with aluminum nitride phosphors

    Science.gov (United States)

    Cherepy, Nerine J.; Payne, Stephen A.; Seeley, Zachary M.; Srivastava, Alok M.

    2016-05-10

    A fluorescent lamp includes a glass envelope; at least two electrodes connected to the glass envelope; mercury vapor and an inert gas within the glass envelope; and a phosphor within the glass envelope, wherein the phosphor blend includes aluminum nitride. The phosphor may be a wurtzite (hexagonal) crystalline structure Al.sub.(1-x)M.sub.xN phosphor, where M may be drawn from beryllium, magnesium, calcium, strontium, barium, zinc, scandium, yttrium, lanthanum, cerium, praseodymium, europium, gadolinium, terbium, ytterbium, bismuth, manganese, silicon, germanium, tin, boron, or gallium is synthesized to include dopants to control its luminescence under ultraviolet excitation. The disclosed Al.sub.(1-x)M.sub.xN:Mn phosphor provides bright orange-red emission, comparable in efficiency and spectrum to that of the standard orange-red phosphor used in fluorescent lighting, Y.sub.2O.sub.3:Eu. Furthermore, it offers excellent lumen maintenance in a fluorescent lamp, and does not utilize "critical rare earths," minimizing sensitivity to fluctuating market prices for the rare earth elements.

  10. Aluminum nitride and nanodiamond thin film microstructures

    Energy Technology Data Exchange (ETDEWEB)

    Knoebber, Fabian; Bludau, Oliver; Roehlig, Claus-Christian; Williams, Oliver; Sah, Ram Ekwal; Kirste, Lutz; Cimalla, Volker; Lebedev, Vadim; Nebel, Christoph; Ambacher, Oliver [Fraunhofer-Institute for Applied Solid State Physics, Freiburg (Germany)

    2010-07-01

    In this work, aluminum nitride (AlN) and nanocrystalline diamond (NCD) thin film microstructures have been developed. Freestanding NCD membranes were coated with a piezoelectrical AlN layer in order to build tunable micro-lens arrays. For the evaluation of the single material quality, AlN and NCD thin films on silicon substrates were fabricated using RF magnetron sputtering and microwave chemical vapor deposition techniques, respectively. The crystal quality of AlN was investigated by X-ray diffraction. The piezoelectric constant d{sub 33} was determined by scanning laser vibrometry. The NCD thin films were optimized with respect to surface roughness, mechanical stability, intrinsic stress and transparency. To determine the mechanical properties of the materials, both, micromechanical resonator and membrane structures were fabricated and measured by magnetomotive resonant frequency spectroscopy and bulging experiments, respectively. Finally, the behavior of AlN/NCD heterostructures was modeled using the finite element method and the first structures were characterized by piezoelectrical measurements.

  11. Aluminum nitride-silicon carbide whisker composites: Processing, properties, and microstructural stability

    Energy Technology Data Exchange (ETDEWEB)

    Cross, M.T.

    1990-01-01

    Aluminum nitride -- silicon carbide whisker composites with up to 20 vol % whiskers were fabricated by pressureless sintering (1750{degree}--1800{degree}C) and by hot-pressing (1700{degree}--1800{degree}C). Silicon carbide whiskers were found to degrade depending on the type of protective powder bed used during sintering. Whiskers were found to degraded in high oxygen containing samples by reaction with sintering additives. Whisker degradation was also due to the formation of silicon carbide -- aluminum nitride solid solution. No whisker degradation was observed in hot-pressed samples. For these samples Young's modulus and fracture toughness were measured. A 33% increase in the fracture toughness was measured by the indentation technique for a 20 vol % whisker composite. Operative toughening mechanisms were investigated using scanning electron microscopy. Crack deflection and whisker bridging were the dominant mechanisms. It was also shown that load transfer from matrix to whiskers can be a contributing factor to toughening. 88 refs., 34 figs., 11 tabs.

  12. Comparison of properties in silicon nitrides sintered with oxide and organometallic additives

    International Nuclear Information System (INIS)

    Luxem, W.; Saruhan, B.

    1994-01-01

    An homogeneous introduction of sintering additives to silicon nitride powder compacts is of great importance in the fabrication of high strength silicon nitride ceramics. Inhomogenities and impurities brought into the compacts with addition of sintering additives may influence the microstructure and phase development and subsequently degrade the mechanical properties and reliability of silicon nitride ceramics. Sintering additives in the system of Sm 2 O 3 + Al 2 O 3 as metaloxides and nitrates are introduced to two different kinds of α-silicon nitride powder. Thereby, a more homogeneous distribution of additives through an intimate mixing is aimed. Advantages of this type of processing of silicon nitride powders against conventional method are discussed. The contribution of powder characteristics in determination of these factors are displayed. (orig.)

  13. Tactile multisensing on flexible aluminum nitride.

    Science.gov (United States)

    Petroni, Simona; Guido, Francesco; Torre, Bruno; Falqui, Andrea; Todaro, Maria Teresa; Cingolani, Roberto; De Vittorio, Massimo

    2012-11-21

    The integration of a polycrystalline material such as aluminum nitride (AlN) on a flexible substrate allows the realization of elastic tactile sensors showing both piezoelectricity and significant capacitive variation under normal stress. The application of a normal stress on AlN generates deformation of the flexible substrate on which AlN is grown, which results in strain gradient of the polycrystalline layer. The strain gradient is responsible for an additional polarization described in the literature as the flexoelectric effect, leading to an enhancement of the transduction properties of the material. The flexible AlN is synthesized by sputtering deposition on kapton HN (poly 4,4'-oxydiphenyl pyromellitimide) in a highly oriented crystal structure. High orientation is demonstrated by X-ray diffraction spectra (FWHM = 0.55° of AlN (0002)) and HRTEM. The piezoelectric coefficient d(33) and stress sensitive capacitance are 4.7 ± 0.5 pm V(-1) and 4 × 10(-3) pF kPa(-1), respectively. The parallel plate capacitors realized for tactile sensing present a typical dome shape, very elastic under applied stress and sensitive in the pressure range of interest for robotic applications (10 kPa to 1 MPa). The flexibility of the device finalized for tactile applications is assessed by measuring the sensor capacitance before and after shaping the sensing foil on curved surfaces for 1 hour. Bending does not affect sensor's operation, which exhibits an electrical Q factor as high as 210, regardless of the bending, and a maximum capacitance shift of 0.02%.

  14. Vapor-solid growth and characterization of aluminum nitride nanocones.

    Science.gov (United States)

    Liu, Chun; Hu, Zheng; Wu, Qiang; Wang, Xizhang; Chen, Yi; Sang, Hai; Zhu, Jianmin; Deng, Shaozhi; Xu, Ningsheng

    2005-02-02

    Aluminum nitride nanostructures are attractive for many promising applications in semiconductor nanotechnology. Herein we report on vapor-solid growth of quasi-aligned aluminum nitride nanocones on catalyst-coated wafers via the reactions between AlCl3 vapor and NH3 gas under moderate temperatures around 700 degrees C, and the growth mechanism is briefly discussed. The as-prepared wurtzite aluminum nitride nanocones grow preferentially along the c-axis with adjustable dimensions of the sharp tips in the range of 20-60 nm. The photoluminescence spectrum reveals a broad blue emission band with a fine photon structure while the field emission study shows a notable emission current with a moderate turn-on field as expected, suggesting their potential applications in light and electron emission nanodevices.

  15. Characterization of Sintered and Sintered/Plasma-Nitrided Fe-1.5% Mo Alloy by SEM, X-Ray Diffraction and Electrochemical Techniques

    Directory of Open Access Journals (Sweden)

    Alves Neto José de Pinho

    2002-01-01

    Full Text Available Electrochemical experiments together with SEM and X-Ray techniques were carried out in order to evaluate the corrosion resistance, to analyze the surface condition and to characterize the nitride layer of the sintered and sintered/plasma-nitrided Fe-1.5% Mo alloy in Mg(NO32 0.5mol.L-1 solution (pH 7.0. The sintered/plasma-nitrided samples presented a higher corrosion resistance, indicating that the surface treatment improved the electrochemical properties of the sintered material. In addition, the nitride layer formed at 500 °C showed better corrosion resistance that the layers formed at higher temperatures. This difference can be ascribed to the nitrogen content in the nitride layer, which at 500°C is higher due to the formation of a phase rich in nitrogen (epsilon phase while at higher temperatures a phase poor in nitrogen (gamma' phase is formed.

  16. Aluminum nitride, Scandium nitride, and Aluminum-Scandium-Nitride ternary alloys : Structural, optical, and electrical properties

    Science.gov (United States)

    Deng, Ruopeng

    Al and Sc are iso-electric, both of which have three valence electrons. Their nitrides AlN and ScN both have high melting points, high hardness, and good chemical inertness. And their distinct properties find applications in different areas: AlN in piezoelectric acoustic-wave devices, and ScN as candidate for high-temperature thermoelectricity. While there are unsettled problems to solve for AlN and ScN alone, which are to obtain tilted c-axis texture in AlN for shear mode acoustic-wave devices to maximize performance, and to determine electronic band structure of ScN that has been long debated due to free carrier effect, the alloying between AlN and ScN is also intriguing in that the ternary alloy Al-Sc-N connects their similarity and opens even wider possibility and greater potential. The significantly enhanced piezoelectric coefficient in the alloy compared to pure AlN is one of the best examples that is little understood, and alternate bandgap engineering in LED fabrication would probably be another contribution from the alloy. Structural, optical, and electrical properties of AlN, ScN, and Al-Sc-N ternary alloys are thus studied in order to answer these questions, and to explore more fundamental physics characteristics within these nitride materials. For the purpose of achieving tilted c-axis texture in AlN, off-axis deposition is conducted with a variable deposition angle α = 0-84° in 5 mTorr pure N2 at room temperature. XRD pole figure analysis show that layers deposited from a normal angle (α = 0°) exhibit fiber texture, with the c-axis tilted by 42+/-2° off the substrate normal. However, as α is increased to 45°, two preferred in-plane grain orientations emerge, with populations I and II having the c-axis tilted towards and away from the deposition flux, by 53+/-2° and 47+/-1° off the substrate normal, respectively. Increasing alpha further to 65 and 84°, results in the development of a single population II with a 43+/-1° tilt. The observed tilt

  17. Epitaxial aluminum nitride tunnel barriers grown by nitridation with a plasma source

    NARCIS (Netherlands)

    Zijlstra, T.; Lodewijk, C.F.J.; Vercruyssen, N.; Tichelaar, F.D.; Loudkov, D.N.; Klapwijk, T.M.

    2007-01-01

    High critical current-density (10?to?420?kA/cm2) superconductor-insulator-superconductor tunnel junctions with aluminum nitride barriers have been realized using a remote nitrogen plasma from an inductively coupled plasma source operated in a pressure range of 10?3–10?1?mbar. We find a much better

  18. One step process for producing dense aluminum nitride and composites thereof

    Science.gov (United States)

    Holt, J. Birch; Kingman, Donald D.; Bianchini, Gregory M.

    1989-01-01

    A one step combustion process for the synthesis of dense aluminum nitride compositions is disclosed. The process comprises igniting pure aluminum powder in a nitrogen atmosphere at a pressure of about 1000 atmospheres or higher. The process enables the production of aluminum nitride bodies to be formed directly in a mold of any desired shape.

  19. The Advanced Aluminum Nitride Synthesis Methods and Its Applications: Patent Review.

    Science.gov (United States)

    Shishkin, Roman A; Elagin, Andrey A; Mayorova, Ekaterina S; Beketov, Askold R

    2016-01-01

    High purity nanosized aluminum nitride synthesis is a current issue for both industry and science. However, there is no up-to-date review considering the major issues and the technical solutions for different methods. This review aims to investigate the advanced methods of aluminum nitride synthesis and its development tendencies. Also the aluminum nitride application patents and prospects for development of the branch have been considered. The patent search on "aluminum nitride synthesis" has been carried out. The research activity has been analyzed. Special attention has been paid to the patenting geography and the leading researchers in aluminum nitride synthesis. Aluminum nitride synthesis methods have been divided into 6 main groups, the most studied approaches are carbothermal reduction (88 patents) and direct nitridation (107 patents). The current issues for each group have been analyzed; the main trends are purification of the final product and nanopowder synthesis. The leading researchers in aluminum nitride synthesis have represented 5 countries, namely: Japan, China, Russia, South Korea and USA. The main aluminum nitride application spheres are electronics (59,1 percent of applications) and new materials manufacturing (30,9 percent). The review deals with the state of the art data in nanosized aluminum nitride synthesis, the major issues and the technical solutions for different synthesis methods. It gives a full understanding of the development tendencies and of the current leaders in the sphere.

  20. One dimensional aluminum nitride nanostructures: synthesis, structural, and luminescence properties.

    Science.gov (United States)

    Mousavi, S H; Gharavi, M A; Haratizadeh, H; Kitai, A; de Oliveira, P W

    2011-09-01

    Aluminum nitride (AIN) is a direct bandgap semiconductor with a bandgap about 6.1 eV at room temperature, the largest among semiconductors. This paper emphasizes experimental results of the growth and optical properties of AIN nanostructures by direct nitridation. The nitridation process was performed by chemical vapor deposition method with nitrogen (N2) gas flow. AIN nanostructures were analyzed by scanning electron microscope (SEM) equipped with energy-dispersive X-ray (EDX) spectroscope and photoluminescence (PL) spectroscopy. AIN nanowires with different widths from ultrathin to thick were synthesized with this method. All of the samples had high purity without presence of any other material in EDX spectrum. The PL spectra were obtained by a 325-nm helium-cadmium (He-Cd) laser as the excitation source showing high-intensity light emitting visible wavelengths for these structures at room temperature.

  1. Piezoelectric actuation of aluminum nitride contour mode optomechanical resonators.

    Science.gov (United States)

    Ghosh, Siddhartha; Piazza, Gianluca

    2015-06-15

    We present a fully-integrated monolithic aluminum nitride optomechanical device in which lateral vibrations generated by a piezoelectric contour mode acoustic ring resonator are used to produce amplitude modulation of an optical signal in a whispering gallery mode photonic ring resonator. Acoustic and optical resonances are independently characterized in this contour mode optomechanical resonator (CMOMR). Electrically driven mechanical modes are optically detected at 35MHz, 654MHz and 884MHz.

  2. Preparation and characterization of morph-genetic aluminum nitride/carbon composites from filter paper

    International Nuclear Information System (INIS)

    Wang Wei; Xue Tao; Jin Zhihao; Qiao Guanjun

    2008-01-01

    Morph-genetic aluminum nitride/carbon composites with cablelike structure were prepared from filter paper template through the surface sol-gel process and carbothermal nitridation reaction. The resulting materials have a hierarchical structure originating from the morphology of cellulose paper. The aluminum nitride/carbon composites have the core-shell microstructure, the core is graphitic carbon, and the shell is aluminum nitride nanocoating formed by carbothermal nitridation reduction of alumina with the interfacial carbon in nitrogen atmosphere. Scanning electron microscopy, energy dispersive X-ray spectroscopy, X-ray diffraction, and transmission electron microscope were employed to characterize the structural morphology and phase compositions of the final products

  3. Laterally Vibrating Resonator Based Elasto-Optic Modulation in Aluminum Nitride

    Science.gov (United States)

    2016-08-15

    APL PHOTONICS 1, 036101 (2016) Laterally vibrating resonator based elasto-optic modulation in aluminum nitride Siddhartha Ghosha and Gianluca Piazza...enable overlap of the guided optical mode with the induced strain field. Both types of resonators are defined in an aluminum nitride (AlN) thin film...concept, we pattern devices in thin films of aluminum nitride (AlN). On account of its wurtzite crystal structure, AlN has been a popular material for

  4. Sample Size Induced Brittle-to-Ductile Transition of Single-Crystal Aluminum Nitride

    Science.gov (United States)

    2015-08-01

    Aluminum Nitride by GA Gazonas and JW McCauley Weapons and Materials Research Directorate, ARL JJ Guo, KM Reddy, A Hirata, T Fujita, and MW Chen...Sample Size Induced Brittle-to-Ductile Transition of Single-Crystal Aluminum Nitride 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c. PROGRAM ELEMENT...their microscopic structure. In this study, we report a size induced brittle-to-ductile transition in single-crystal aluminum nitride (AlN). When the

  5. Radiation tolerance of piezoelectric bulk single-crystal aluminum nitride.

    Science.gov (United States)

    Parks, David A; Tittmann, Bernhard R

    2014-07-01

    For practical use in harsh radiation environments, we pose selection criteria for piezoelectric materials for non-destructive evaluation (NDE) and material characterization. Using these criteria, piezoelectric aluminum nitride is shown to be an excellent candidate. The results of tests on an aluminum-nitride- based transducer operating in a nuclear reactor are also presented. We demonstrate the tolerance of single-crystal piezoelectric aluminum nitride after fast and thermal neutron fluences of 1.85 x 10(18) neutron/cm(2) and 5.8 x 10(18) neutron/ cm(2), respectively, and a gamma dose of 26.8 MGy. The radiation hardness of AlN is most evident from the unaltered piezoelectric coefficient d33, which measured 5.5 pC/N after a fast and thermal neutron exposure in a nuclear reactor core for over 120 MWh, in agreement with the published literature value. The results offer potential for improving reactor safety and furthering the understanding of radiation effects on materials by enabling structural health monitoring and NDE in spite of the high levels of radiation and high temperatures, which are known to destroy typical commercial ultrasonic transducers.

  6. Efeito do teor de Y2O3 na sinterização do nitreto de alumínio Effect of Y2O3 content on the sintering of aluminum nitride

    Directory of Open Access Journals (Sweden)

    A. L. Molisani

    2006-06-01

    Full Text Available O Y2O3 é o principal aditivo usado na sinterização de cerâmicas de AlN com elevada condutividade térmica, que são destinadas a produção de dispositivos eletrônicos de alta performance. Neste trabalho, investigou-se o efeito do teor de aditivo na sinterização de AlN com 0,5 a 4% em peso de Y2O3, correlacionado os resultados de densidade, análise microestrutural e a evolução das segundas fases em função da temperatura de sinterização. Os corpos compactados foram sinterizados em atmosfera de nitrogênio usando um forno com elemento resistivo de tungstênio entre 1650 e 2000 ºC por 1 h. Os resultados mostraram que a densificação das amostras de AlN com até 4% de Y2O3 ocorreu por sinterização no estado sólido até 1700 ºC. Acima desta temperatura, a densificação ocorreu por sinterização assistida por fase líquida. A fusão da fase YAG foi responsável pela formação de líquido ao redor de 1725 ºC nas amostras de AlN com até 4% de Y2O3. A quantidade de fase líquida aumentou em função do teor de aditivo nas amostras somente após a densificação total devido à fusão das partículas grandes refratárias de aluminatos de ítrio (YAP e YAM em altas temperaturas. Assim, o aumento do teor de Y2O3 (0,5 a 4% em peso não causou variações significativas no comportamento de densificação do AlN porque a quantidade de fase líquida foi próxima na faixa de temperatura em que ocorreu a densificação. A adição de apenas 0,5% em peso de Y2O3 aumentou significativamente a sinterabilidade do AlN. O uso de Y2O3 com larga distribuição granulométrica em relação a do AlN não causou a formação de poros grandes. Os resultados mostraram uma tendência de evaporação de compostos óxidos nas amostras de AlN com Y2O3 sinterizadas principalmente acima de 1850 ºC.Y2O3 is the main sintering aid for high thermal conductivity AlN ceramics for the production of electronic devices. The effect of varying the amount of Y2O3 as

  7. Epoxy composites filled with boron nitride and aluminum nitride for improved thermal conductivity

    OpenAIRE

    Hutchinson, John M.; Román Concha, Frida Rosario; Cortés Izquierdo, M. Pilar; Calventus Solé, Yolanda

    2017-01-01

    Epoxy composites containing boron nitride (BN) or aluminum nitride (AlN or Al2N3) particles have been studied with a view to obtaining increased thermal conductivity. The effect of these fillers on the cure reaction has been investigated by differential scanning calorimetry (DSC) for two systems, epoxy-diamine and epoxy-thiol, and for volume fractions up to about 35 % of these filler particles. For the epoxy-diamine system, the glass transition temperature of the fully cured system, the heat ...

  8. Spark Plasma Sintered AlN-BN Composites and Its Thermal Conductivity

    NARCIS (Netherlands)

    Zhao Haiyang, [No Value; Wang Weimin, [No Value; Wang Hao, [No Value; Fu Zhengyi, [No Value

    2008-01-01

    A series of samples of hexagonal boron nitride-aluminum nitride ceramic composites with different amounts of CaF(2) as sintering aid were prepared by spark plasma sintered at 1700-1850 degrees C for 5 min. The addition of CaF(2) effectively lowered the sintering temperature and promoted the

  9. Aluminum Nitride Formation From Aluminum Oxide/Phenol Resin Solid-Gel Mixture By Carbothermal Reduction Nitridation Method

    Directory of Open Access Journals (Sweden)

    Mylinh Dang Thy

    2015-06-01

    Full Text Available Hexagonal and cubic crystalline aluminum nitride (AlN particles were successfully synthesized using phenol resin and alpha aluminum oxide (α-Al2O3 as precursors through new solid-gel mixture and carbothermal reduction nitridaton (CRN process with molar ratio of C/Al2O3 = 3. The effect of reaction temperature on the decomposition of phenol resin and synthesis of hexagonal and cubic AlN were investigated and the reaction mechanism was also discussed. The results showed that α-Al2O3 powder in homogeneous solid-gel precursor was easily nitrided to yield AlN powder during the carbothermal reduction nitridation process. The reaction temperature needed for a complete conversion for the precursor was about 1700°C, which much lower than that when using α-Al2O3 and carbon black as starting materials. To our knowledge, phenol resin is the first time to be used for synthesizing AlN powder via carbothermal reduction and nitridation method, which would be an efficient, economical, cheap assistant reagent for large scale synthesis of AlN powder.

  10. Influence of temperature and glass composition on aluminum nitride contact angle

    OpenAIRE

    Tarnovskiy, R.; Ditts, Aleksander Andreevich

    2016-01-01

    Results of research of different glass compositions for possibility of their application in metallization pastes intended for ceramics based on aluminum nitride are presented in this article. It includes research of contact angle of aluminum nitride with glasses of different compositions at different temperatures and different roughness of ceramics.

  11. Optical frequency comb generation from aluminum nitride microring resonator.

    Science.gov (United States)

    Jung, Hojoong; Xiong, Chi; Fong, King Y; Zhang, Xufeng; Tang, Hong X

    2013-08-01

    Aluminum nitride (AlN) is an appealing nonlinear optical material for on-chip wavelength conversion. Here we report optical frequency comb generation from high-quality-factor AlN microring resonators integrated on silicon substrates. By engineering the waveguide structure to achieve near-zero dispersion at telecommunication wavelengths and optimizing the phase matching for four-wave mixing, frequency combs are generated with a single-wavelength continuous-wave pump laser. Further, the Kerr coefficient (n₂) of AlN is extracted from our experimental results.

  12. Use of aluminum nitride to obtain temperature measurements in a high temperature and high radiation environment

    Science.gov (United States)

    Wernsman, Bernard R.; Blasi, Raymond J.; Tittman, Bernhard R.; Parks, David A.

    2016-04-26

    An aluminum nitride piezoelectric ultrasonic transducer successfully operates at temperatures of up to 1000.degree. C. and fast (>1 MeV) neutron fluencies of more than 10.sup.18 n/cm.sup.2. The transducer comprises a transparent, nitrogen rich aluminum nitride (AlN) crystal wafer that is coupled to an aluminum cylinder for pulse-echo measurements. The transducer has the capability to measure in situ gamma heating within the core of a nuclear reactor.

  13. Strength evaluation test of pressureless-sintered silicon nitride at room temperature

    Science.gov (United States)

    Matsusue, K.; Takahara, K.; Hashimoto, R.

    1984-01-01

    In order to study strength characteristics at room temperature and the strength evaluating method of ceramic materials, the following tests were conducted on pressureless sintered silicon nitride specimens: bending tests, the three tensile tests of rectangular plates, holed plates, and notched plates, and spin tests of centrally holed disks. The relationship between the mean strength of specimens and the effective volume of specimens are examined using Weibull's theory. The effect of surface grinding on the strength of specimens is discussed.

  14. Reactive gas condensation synthesis of aluminum nitride nanoparticles.

    Science.gov (United States)

    Baker, Colin C; Ceylan, Abdullah; Shah, S Ismat

    2006-01-01

    Aluminum Nitride (AIN) nanoparticles were synthesized using a Reactive Gas Condensation (RGC) technique in which a mixture of ammonia (NH3) and nitrogen (N2) gases were used for the nitridation of aluminum. NH3 served as the reactive gas, while N2 served as both a carrier gas and the inert source for particle condensation. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analyses revealed that at reactive gas compositions greater than 10% NH3 in N2, samples were composed entirely of hexagonal AIN nanoparticles. Electron diffraction patterns showed single crystal hexagonal AIN structure. The particle size was controlled by varying the pressure of the gas mixture. AIN nanoparticles were dispersed in a liquid matrix to enhance thermal conductivity. Results showed that a minimal addition of AIN increased the thermal conductivity of hydrocarbon pump oil by approximately 27%. The thermal conductivity became constant after reaching a maximum above 0.01 wt% AIN. Temporal stability of AIN was studied by XRD. Samples exposed to air for extended periods of time and analyzed by XRD show no degradation of crystalline AIN nanoparticles.

  15. Low-temperature plasma nitriding of sintered PIM 316L austenitic stainless steel

    Energy Technology Data Exchange (ETDEWEB)

    Mendes, Aecio Fernando; Scheuer, Cristiano Jose; Joanidis, Ioanis Labhardt; Cardoso, Rodrigo Perito; Mafra, Marcio; Klein, Aloisio Nelmo; Brunatto, Silvio Francisco, E-mail: brunatto@ufpr.br [Universidade Federal do Parana (UFPR), Curitiba, PR (Brazil). Dept. de Engenharia Mecanica. Grupo de Tecnologia de Fabricacao Assistida pro Plasma e Metalurgia do Po

    2014-08-15

    This work reports experimental results on sintered PIM 316L stainless steel low-temperature plasma nitriding. The effect of treatment temperature and time on process kinetics, microstructure and surface characteristics of the nitrided samples were investigated. Nitriding was carried out at temperatures of 350, 380, 410 and 440 °C , and times of 4, 8 and 16 h, using a gas mixture composed by 60% N2 + 20% H2 + 20% Ar, at a gas flow rate of 5.00 X 10{sup 6} Nm{sup 3-1}, and a pressure of 800 Pa. The treated samples were characterized by scanning electron microscopy, X-ray diffractometry and microhardness measurements. Results indicate that low-temperature plasma nitriding is a diffusion controlled process. The calculated activation energy for nitrided layer growth was 111.4 kJmol{sup -1}. Apparently precipitation-free layers were produced in this study. It was also observed that the higher the treatment temperature and time the higher is the obtained surface hardness. Hardness up to 1343 HV{sub 0.025} was verified for samples nitrided at 440 °C. Finally, the characterization of the treated surface indicates the formation of cracks, which were observed in regions adjacent to the original pores after the treatment. (author)

  16. Spark plasma sintering and porosity studies of uranium nitride

    Science.gov (United States)

    Johnson, Kyle D.; Wallenius, Janne; Jolkkonen, Mikael; Claisse, Antoine

    2016-05-01

    In this study, a number of samples of UN sintered by the SPS method have been fabricated, and highly pure samples ranging in density from 68% to 99.8%TD - corresponding to an absolute density of 14.25 g/cm3 out of a theoretical density of 14.28 g/cm3 - have been fabricated. By careful adjustment of the sintering parameters of temperature and applied pressure, the production of pellets of specific porosity may now be achieved between these ranges. The pore closure behaviour of the material has also been documented and compared to previous studies of similar materials, which demonstrates that full pore closure using these methods occurs near 97.5% of relative density.

  17. Powder metallurgy routes toward aluminum boron nitride nanotube composites, their morphologies, structures and mechanical properties

    Energy Technology Data Exchange (ETDEWEB)

    Yamaguchi, Maho [Nanotube Unit, World Premier International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 3050044 (Japan); Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennodai 1, Tsukuba, Ibaraki 3050005 (Japan); Meng, Fanqiang [Research Center for Strategic Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 3050044 (Japan); Firestein, Konstantin [Laboratory of Inorganic Nanomaterials, National University of Science and Technology “MISIS”, Leninsky pr. 4, Moscow 119049 (Russian Federation); Tsuchiya, Koichi [Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennodai 1, Tsukuba, Ibaraki 3050005 (Japan); Research Center for Strategic Materials, National Institute for Materials Science, 1-2-1 Sengen, Tsukuba, Ibaraki 3050044 (Japan); Golberg, Dmitri, E-mail: GOLBERG.Dmitri@nims.go.jp [Nanotube Unit, World Premier International Center for Materials Nanoarchitectonics (WPI-MANA), National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 3050044 (Japan); Graduate School of Pure and Applied Sciences, University of Tsukuba, Tennodai 1, Tsukuba, Ibaraki 3050005 (Japan)

    2014-05-01

    Aluminum/boron nitride nanotube (BNNT) composites with up to 5 wt% (i.e., 9.7 vol%) nanotube fractions were prepared via spark plasma sintering (SPS) and high-pressure torsion (HPT) methods. Various microscopy techniques, X-ray diffraction, and energy dispersive X-ray analysis confirmed the integration of the two phases into decently dense and compact composites. No other phases, like Al borides or nitrides, formed in the Al–BNNTs macrocomposites of the two series. The BNNTs were found to be preferentially located along Al grain boundaries in SPS samples (grain size was 10–20 μm) creating micro-discontinuities and pores which were found to be detrimental for the sample hardness, whereas in HPT samples, the tubes were rather evenly distributed within a fine-grained Al matrix (grain size of several hundred nm). Therefore, the hardness of HPT samples was drastically increased with increasing BNNTs content in Al pellets. The value for Al–BNNT 3.0 wt% sample was more than doubled (190 MPa) compared to a pure Al–HPT compact (90 MPa). And the room temperature ultimate tensile strength of Al–BNNTs HPT samples containing 3.0 wt% BNNT (∼300 MPa) became ∼1.5 times larger than that of a BNNT-free HPT–Al compact (∼200 MPa)

  18. Electric Field Stiffening Effect in c-Oriented Aluminum Nitride Piezoelectric Thin Films.

    Science.gov (United States)

    Chen, Cong; Shang, Zhengguo; Gong, Jia; Zhang, Feng; Zhou, Hong; Tang, Bin; Xu, Yi; Zhang, Chi; Yang, Ya; Mu, Xiaojing

    2018-01-17

    Aluminum nitride offers unique material advantages for the realization of ultrahigh-frequency acoustic devices attributed to its high ratio of stiffness to density, compatibility with harsh environments, and superior thermal properties. Although, to date, aluminum nitride thin films have been widely investigated regarding their electrical and mechanical characteristics under alternating small signal excitation, their ultrathin nature under large bias may also provide novel and useful properties. Here, we present a comprehensive investigation of electric field stiffening effect in c-oriented aluminum nitride piezoelectric thin films. By analyzing resonance characteristics in a 2.5 GHz aluminum nitride-based film bulk acoustic resonator, we demonstrate an up to 10% linear variation in the equivalent stiffness of aluminum nitride piezoelectric thin films when an electric field was applied from -150 to 150 MV/m along the c-axis. Moreover, for the first time, an atomic interaction mechanism is proposed to reveal the nature of electric field stiffening effect, suggesting that the nonlinear variation of the interatomic force induced by electric field modulation is the intrinsic reason for this phenomenon in aluminum nitride piezoelectric thin films. Our work provides vital experimental data and effective theoretical foundation for electric field stiffening effect in aluminum nitride piezoelectric thin films, indicating the huge potential in tunable ultrahigh-frequency microwave devices.

  19. Mid-infrared optical properties of thin films of aluminum oxide, titanium dioxide, silicon dioxide, aluminum nitride, and silicon nitride.

    Science.gov (United States)

    Kischkat, Jan; Peters, Sven; Gruska, Bernd; Semtsiv, Mykhaylo; Chashnikova, Mikaela; Klinkmüller, Matthias; Fedosenko, Oliana; Machulik, Stephan; Aleksandrova, Anna; Monastyrskyi, Gregorii; Flores, Yuri; Masselink, W Ted

    2012-10-01

    The complex refractive index components, n and k, have been studied for thin films of several common dielectric materials with a low to medium refractive index as functions of wavelength and stoichiometry for mid-infrared (MIR) wavelengths within the range 1.54-14.29 μm (700-6500 cm(-1)). The materials silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, and titanium oxide are prepared using room temperature reactive sputter deposition and are characterized using MIR variable angle spectroscopic ellipsometry. The investigation shows how sensitive the refractive index functions are to the O2 and N2 flow rates, and for which growth conditions the materials deposit homogeneously. It also allows conclusions to be drawn on the degree of amorphousness and roughness. To facilitate comparison of the materials deposited in this work with others, the index of refraction was also determined and provided for the near-IR and visible ranges of the spectrum. The results presented here should serve as a useful information base for designing optical coatings for the MIR part of the electromagnetic spectrum. The results are parameterized to allow them to be easily used for coating design.

  20. Use of high-thermal conductive aluminum nitride based ceramics in vacuum UHF electronic devices

    Directory of Open Access Journals (Sweden)

    Chasnyk V. I.

    2013-06-01

    Full Text Available Analysis of properties and characteristics of the alumina, beryllium oxide and aluminum nitride based ceramic materials used in UHF electronic devices has been made. It was shown that the complex of parameters including structural and functional characteristics of the high-thermal conductive aluminum nitride ceramics prevail over all types of alumina ceramics and is not lower than the same characteristics of the beryllium oxide ceramics especially at the temperatures higher than 450 °C. The examples of the prevailing use of the aluminum nitride ceramics inside vacuum UHF-region devices: TWT’s and klystrons.

  1. Morphological features in aluminum nitride epilayers prepared by magnetron sputtering

    Directory of Open Access Journals (Sweden)

    Stach Sebastian

    2015-03-01

    Full Text Available The aim of this study is to characterize the surface topography of aluminum nitride (AlN epilayers prepared by magnetron sputtering using the surface statistical parameters, according to ISO 25178-2:2012. To understand the effect of temperature on the epilayer structure, the surface topography was investigated through atomic force microscopy (AFM. AFM data and analysis of surface statistical parameters indicated the dependence of morphology of the epilayers on their growth conditions. The surface statistical parameters provide important information about surface texture and are useful for manufacturers in developing AlN thin films with improved surface characteristics. These results are also important for understanding the nanoscale phenomena at the contacts between rough surfaces, such as the area of contact, the interfacial separation, and the adhesive and frictional properties.

  2. Broadband directional coupling in aluminum nitride nanophotonic circuits.

    Science.gov (United States)

    Stegmaier, Matthias; Pernice, Wolfram H P

    2013-03-25

    Aluminum nitride (AlN)-on-insulator has emerged as a promising platform for the realization of linear and non-linear integrated photonic circuits. In order to efficiently route optical signals on-chip, precise control over the interaction and polarization of evanescently coupled waveguide modes is required. Here we employ nanophotonic AlN waveguides to realize directional couplers with a broad coupling bandwidth and low insertion loss. We achieve uniform splitting of incoming modes, confirmed by high extinction-ratio exceeding 33dB in integrated Mach-Zehnder Interferometers. Optimized three-waveguide couplers furthermore allow for extending the coupling bandwidth over traditional side-coupled devices by almost an order of magnitude, with variable splitting ratio. Our work illustrates the potential of AlN circuits for coupled waveguide optics, DWDM applications and integrated polarization diversity schemes.

  3. Mode control and mode conversion in nonlinear aluminum nitride waveguides.

    Science.gov (United States)

    Stegmaier, Matthias; Pernice, Wolfram H P

    2013-11-04

    While single-mode waveguides are commonly used in integrated photonic circuits, emerging applications in nonlinear and quantum optics rely fundamentally on interactions between modes of different order. Here we propose several methods to evaluate the modal composition of both externally and device-internally excited guided waves and discuss a technique for efficient excitation of arbitrary modes. The applicability of these methods is verified in photonic circuits based on aluminum nitride. We control modal excitation through suitably engineered grating couplers and are able to perform a detailed study of waveguide-internal second harmonic generation. Efficient and broadband power conversion between orthogonal polarizations is realized within an asymmetric directional coupler to demonstrate selective excitation of arbitrary higher-order modes. Our approach holds promise for applications in nonlinear optics and frequency up/down-mixing in a chipscale framework.

  4. Method of forming aluminum oxynitride material and bodies formed by such methods

    Science.gov (United States)

    Bakas, Michael P [Ammon, ID; Lillo, Thomas M [Idaho Falls, ID; Chu, Henry S [Idaho Falls, ID

    2010-11-16

    Methods of forming aluminum oxynitride (AlON) materials include sintering green bodies comprising aluminum orthophosphate or another sacrificial material therein. Such green bodies may comprise aluminum, oxygen, and nitrogen in addition to the aluminum orthophosphate. For example, the green bodies may include a mixture of aluminum oxide, aluminum nitride, and aluminum orthophosphate or another sacrificial material. Additional methods of forming aluminum oxynitride (AlON) materials include sintering a green body including a sacrificial material therein, using the sacrificial material to form pores in the green body during sintering, and infiltrating the pores formed in the green body with a liquid infiltrant during sintering. Bodies are formed using such methods.

  5. Fabrication of silicon nitride nanoceramics—Powder preparation and sintering: A review

    Directory of Open Access Journals (Sweden)

    Toshiyuki Nishimura et al

    2007-01-01

    Full Text Available Fine-grained silicon nitride ceramics were investigated mainly for their high-strain-rate plasticity. The preparation and densification of fine silicon nitride powder were reviewed. Commercial sub-micrometer powder was used as raw powder in the "as-received" state and then used after being ground and undergoing classification operation. Chemical vapor deposition and plasma processes were used for fabricating nanopowder because a further reduction in grain size caused by grinding had limitations. More recently, nanopowder has also been obtained by high-energy milling. This process in principle is the same as conventional planetary milling. For densification, primarily hot pressing was performed, although a similar process known as spark plasma sintering (SPS has also recently been used. One of the advantages of SPS is its high heating rate. The high heating rate is advantageous because it reduces sintering time, achieving densification without grain growth. We prepared silicon nitride nanopowder by high-energy milling and then obtained nanoceramics by densifying the nanopowder by SPS.

  6. Deep Level Defects in Electron-Irradiated Aluminum Gallium Nitride Grown by Molecular Beam Epitaxy

    National Research Council Canada - National Science Library

    Hogsed, Michael R

    2005-01-01

    Aluminum gallium nitride (AlGaN)-based devices are attractive candidates for integration into future Air Force communication and sensor platforms, including those that must operate in harsh radiation environments...

  7. Optical frequency comb generation from aluminum nitride micro-ring resonator

    OpenAIRE

    Jung, Hojoong; Xiong, Chi; Fong, King Y.; Zhang, Xufeng; Tang, Hong X.

    2013-01-01

    Aluminum nitride is an appealing nonlinear optical material for on-chip wavelength conversion. Here we report optical frequency comb generation from high quality factor aluminum nitride micro-ring resonators integrated on silicon substrates. By engineering the waveguide structure to achieve near-zero dispersion at telecommunication wavelengths and optimizing the phase matching for four-wave mixing, frequency combs are generated with a single wavelength continuous-wave pump laser. The Kerr coe...

  8. Gas-Phase Combustion Synthesis of Aluminum Nitride Powder

    Science.gov (United States)

    Axelbaum, R. L.; Lottes, C. R.; Huertas, J. I.; Rosen, L. J.

    1996-01-01

    Due to its combined properties of high electrical resistivity and high thermal conductivity aluminum nitride (AlN) is a highly desirable material for electronics applications. Methods are being sought for synthesis of unagglomerated, nanometer-sized powders of this material, prepared in such a way that they can be consolidated into solid compacts having minimal oxygen content. A procedure for synthesizing these powders through gas-phase combustion is described. This novel approach involves reacting AlCl3, NH3, and Na vapors. Equilibrium thermodynamic calculations show that 100% yields can be obtained for these reactants with the products being AlN, NaCl, and H2. The NaCl by-product is used to coat the AlN particles in situ. The coating allows for control of AlN agglomeration and protects the powders from hydrolysis during post-flame handling. On the basis of thermodynamic and kinetic considerations, two different approaches were employed to produce the powder, in co-flow diffusion flame configurations. In the first approach, the three reactants were supplied in separate streams. In the second, the AlCl3 and NH3 were premixed with HCl and then reacted with Na vapor. X-ray diffraction (XRD) spectra of as-produced powders show only NaCl for the first case and NaCl and AlN for the second. After annealing at 775 C tinder dynamic vacuum, the salt was removed and XRD spectra of powders from both approaches show only AlN. Aluminum metal was also produced in the co-flow flame by reacting AlCl3 with Na. XRD spectra of as-produced powders show the products to be only NaCl and elemental aluminum.

  9. Optical properties and residual stress in aluminum nitride films prepared by alternating-current dual reactive magnetron sputtering.

    Science.gov (United States)

    Tang, Chien-Jen; Jaing, Cheng-Chung; Lee, Kun-Hsien; Lee, Cheng-Chung

    2011-05-01

    Aluminum nitride films were deposited by alternating-current dual reactive magnetron sputtering. The influence of different nitrogen flow and working pressures at a sputtering power of 5 kW on the refractive index, extinction coefficient, crystalline structure, residual stress, and surface roughness of aluminum nitride films was discussed. The aluminum nitride film would have high refractive index, low extinction coefficient and small residual stress at suitable nitrogen flow rate and low working pressure.

  10. Conductivity of materials made of aluminum nitride and silicon nitride mixtures

    Science.gov (United States)

    Gorbatov, A. G.; Kamyshov, V. M.

    1978-01-01

    To establish the possible mechanism for conductivity in aluminum nitride a study was made of the electric conductivity of pure AlN and its mixtures with silicon nitride at different temperatures and partial pressures of nitrogen in the gas phase. The thermoelectromotive force was also measured. The experiments used polycrystalline samples of cylindrical shape 18 mm in diameter made of powders by hot pressing in graphite press molds at a temperature of 1973-2273 K and pressure 1,470,000 n/sqm. The items obtained by this method had porosity not over 5%. After pressing, the samples were machined to remove carbon from the surface, and were annealed in a stream of dry ammonia for 10 h at a temperature of 1273-1373 K. Electric conductivity was measured according to the bridge scheme on an alternating current of frequency 10 kHz. In order to guarantee close contact of the platinum electrodes with the surface of the samples, a thin layer of platinum was sprayed on them. Experiments were conducted in the temperature interval 1273-1573 K with a half hour delay at each assigned temperature with heating and cooling.

  11. Boron-nitride and aluminum-nitride "Pringles" and flapping motion.

    Science.gov (United States)

    Fa, Wei; Chen, Shuang; Zeng, Xiao Cheng

    2014-07-18

    Motivated by the recent successful synthesis of a new nanocarbon, namely, a warped, double-concave graphene "Pringle" (Nat. Chem., 2013, 5, 739), we investigate properties of warped boron-nitride (BN) and aluminum-nitride (AlN) analogues, i.e., the non-planar B40N40H30 and Al40N40H30 "Pringles" using density functional theory (DFT) calculations. Particular attention is placed on the effect of non-hexagonal rings on the stability and physical properties of BN and AlN Pringles. We find that the warped BN and AlN Pringles with one pentagon and five heptagons are stable without imaginary frequencies. Both the warped B40N40H30 and Al40N40H30 Pringles are expected to be flexible in solution as both can periodically change their shape in a dynamic "flapping" fashion due to their much lower activation barrier of racemization compared to that of the C80H30 counterpart. Since the warped B40N40H30 possesses a smaller HOMO-LUMO gap than the planar B39N39H30, it is expected that incorporating non-hexagonal ring defects by design can be an effective way to modify electronic properties of BN-based nanoplates.

  12. Reassembling Solid Materials by Femtosecond Laser Ablation: Case of Aluminum Nitride

    Science.gov (United States)

    Kobayashi, Tohru; Matsuo, Yukari

    2013-06-01

    Through atomization and ionization, we could completely alter the composition of a nonconductive material, aluminum nitride, by femtosecond laser ablation. Preferential production of pure aluminum cluster cations Aln+ (n≤32) reflects not only their higher energetic stability compared with mixed clusters AlnNm+ but also completion of thermal relaxation in ablation plasma. Observation of metastable dissociation of Aln+ indicates that cluster cations have still enough internal energy for dissociation to occur, although the process is much slower than the cluster formation. Almost no cluster formation has been observed after nanosecond laser ablation of aluminum nitride, which highlights the distinct nature of ablation plasma produced by femtosecond laser ablation.

  13. Microstructure and Properties of Spark Plasma Sintered Aluminum Containing 1 wt.% SiC Nanoparticles

    Directory of Open Access Journals (Sweden)

    Ismaila Kayode Aliyu

    2015-01-01

    Full Text Available The low hardness and strength of aluminum, which limits its use in many industrial applications, could be increased through the addition of nanoparticles. However, the appropriate processing method and parameters should be carefully selected in order to achieve the desired improvement in properties. In this work, aluminum was reinforced with low weight fraction (1 wt.% of SiC nanoparticles and consolidated through spark plasma sintering. The effect of processing parameters on the densification, microstructure, and properties of the processed material was investigated. Field Emission Scanning Electron Microscope (FE-SEM equipped with Energy Dispersive X-ray Spectroscopy (EDS facility was used to characterize the microstructure and analyze the reinforcement’s distribution in sintered samples. Phases present were characterized through X-ray diffraction (XRD. A densimeter and a digital microhardness tester were used to measure the density and hardness, respectively. Compressive tests were performed using universal testing machine. A fully dense Al-1 wt.% SiC sample was obtained. Analysis of density and hardness values showed that the influence of applied pressure was more pronounced than heating rate while the influence of sintering temperature was more significant than sintering time. Within the range of parameters used, the highest values of the characterized properties were obtained at a sintering temperature of 600 °C, sintering time of 10 min, pressure of 50 MPa, and heating rate of 200 °C/min.

  14. Salt-soda sinter process for recovering aluminum from fly ash

    Science.gov (United States)

    McDowell, W.J.; Seeley, F.G.

    A method for recovering aluminum values from fly ash comprises sintering the fly ash with a mixture of NaCl and Na/sub 2/CO/sub 3/ to a temperature in the range 700/sup 0/ to 900/sup 0/C for a period of time sufficient to convert greater than 90% of the aluminum content of the fly ash into an acidsoluble fraction and then contacting the thus-treated fraction with an aqueous solution of nitric or sulfuric acid to effect dissolution of aluminum and other metal values in said solution.

  15. Performance Improvement of High Frequency Aluminum Nitride Ultrasonic Transducers

    Directory of Open Access Journals (Sweden)

    Yangjie Wei

    2013-01-01

    Full Text Available This paper presents three methods to improve the performance of a high frequency aluminum nitride (AlN ultrasonic transducer. For a high frequency AlN ultrasonic transducer, its properties are related with its top electrode size, electrical impedance matching and layers of the piezoelectric plate. However, until now, no research has been published to analyze their influence on the performance of AlN ultrasonic transducers, especially in the frequency range above 200 MHz. First, two factors related with the top electrode size are proposed based on transmission coefficient and stored energy, and analysis is performed on an Al-AlN-Al on silicon wafers with different electrode sizes. The result proves when the electrode size is 1mm2, the transducer can provide the maximum output voltage and the maximal signal- to-noise ratio (SNR. Then, electrical impedance matching is conducted to improve the performance of transducers, and the experiment result shows that after matching, the resolution and sensitivity have been improved. Finally, a stacked AlN transducer is developed and its model is constructed to analyze its properties in time domain and frequency domain. The comparison between the simulation and the experiment shows the effectiveness of the proposed model, and a stacked structure can be used to improve the sensitivity of a high frequency AlN ultrasonic transducer.

  16. Aluminum Nitride Ceramic as an Optically Stimulable Luminescence Dosimeter Plate

    Directory of Open Access Journals (Sweden)

    Go Okada

    2016-04-01

    Full Text Available Photostimulable storage phosphors have been used in a wide range of applications including radiation measurements in one- and two-dimensional spaces, called point dosimetry and radiography. In this work, we report that an aluminum nitride (AlN ceramic plate, which is practically used as a heat sink (SHAPAL®, Tokuyama Corp., Yamaguchi, Japan, shows good optically-stimulated luminescence (OSL properties with sufficiently large signal and capability for imaging applications, and we have characterized the AlN plate for OSL applications. Upon interaction with X-rays, the sample color turns yellowish, due to a radiation-induced photoabsorption band in the UV-blue range below ~500 nm. After irradiating the sample with X-rays, an intense OSL emission can be observed in the UV (360 nm spectral region during stimulation by red light. Although our measurement setup is not optimized, dose detection was confirmed as low as ~3 mGy to over 20 Gy. Furthermore, we have successfully demonstrated that the SHAPAL® AlN ceramic plate has great potential to be used as an imaging plate in radiography.

  17. Spotting 2D atomic layers on aluminum nitride thin films.

    Science.gov (United States)

    Chandrasekar, Hareesh; Bharadwaj B, Krishna; Vaidyuala, Kranthi Kumar; Suran, Swathi; Bhat, Navakanta; Varma, Manoj; Srinivasan Raghavan

    2015-10-23

    Substrates for 2D materials are important for tailoring their fundamental properties and realizing device applications. Aluminum nitride (AIN) films on silicon are promising large-area substrates for such devices in view of their high surface phonon energies and reasonably large dielectric constants. In this paper epitaxial layers of AlN on 2″ Si wafers have been investigated as a necessary first step to realize devices from exfoliated or transferred atomic layers. Significant thickness dependent contrast enhancements are both predicted and observed for monolayers of graphene and MoS2 on AlN films as compared to the conventional SiO2 films on silicon, with calculated contrast values approaching 100% for graphene on AlN as compared to 8% for SiO2 at normal incidences. Quantitative estimates of experimentally measured contrast using reflectance spectroscopy show very good agreement with calculated values. Transistors of monolayer graphene on AlN films are demonstrated, indicating the feasibility of complete device fabrication on the identified layers.

  18. Tunability of aluminum nitride acoustic resonators: a phenomenological approach.

    Science.gov (United States)

    Defay, Emmanuel; Ben Hassine, Nizar; Emery, Patrick; Parat, Guy; Abergel, Julie; Devos, Arnaud

    2011-12-01

    A phenomenological approach is developed to identify the physical parameters causing the dc-voltage-induced tunability of aluminum nitride (AlN) acoustic resonators, widely used for RF filters. The typical resonance frequency of these resonators varies from 2.038 GHz at -200 V to 2.062 GHz at +200 V. This indicates, based on these RF measurements versus dc bias and the model used, that the AlN stiffness variation versus dc bias is the prominent effect because both resonance and antiresonance experience a similar variation, respectively, 24 MHz and 19 MHz at 400 V. Picosecond ultrasonics were also used to prove independently that the acoustic velocity (and therefore AlN stiffness) is sensitive to dc bias and that the variation induced is comparable to that extracted from the resonance measurements. It turned out that the stiffness relative variation for an electric field of 1 V/μm extracted from picosecond ultrasonics is 54 ppm-μm/V. This is in good agreement with the value extracted from the RF measurements, namely 57.2 ppm-μm/V. The overall tunability of these AlN resonators reaches 1.1%, which is an interesting figure, although probably not high enough for genuine applications.

  19. Suspended 2-D photonic crystal aluminum nitride membrane reflector.

    Science.gov (United States)

    Ho, Chong Pei; Pitchappa, Prakash; Soon, Bo Woon; Lee, Chengkuo

    2015-04-20

    We experimentally demonstrated a free-standing two-dimensional (2-D) photonic crystal (PhC) aluminum nitride (AlN) membrane to function as a free space (or out-of-plane) reflector working in the mid infrared region. By etching circular holes of radius 620nm in a 330nm thick AlN slab, greater than 90% reflection was measured from 3.08μm to 3.78μm, with the peak reflection of 96% at 3.16μm. Due to the relatively low refractive index of AlN, we also investigated the importance of employing methods such as sacrificial layer release to enhance the performance of the PhC. In addition, characterization of the AlN based PhC was also done up to 450°C to examine the impact of thermo-optic effect on the performance. Despite the high temperature operation, the redshift in the peak reflection wavelengths of the device was estimated to be only 14.1nm. This equates to a relatively low thermo-optic coefficient 2.22 × 10(-5) K(-1) for AlN. Such insensitivity to thermo-optic effect makes AlN based 2-D PhC a promising technology to be used as photonic components for high temperature applications such as Fabry-Perot interferometer used for gas sensing in down-hole oil drilling and ruggedized electronics.

  20. Aluminum nitride on titanium for CMOS compatible piezoelectric transducers.

    Science.gov (United States)

    Doll, Joseph C; Petzold, Bryan C; Ninan, Biju; Mullapudi, Ravi; Pruitt, Beth L

    2010-01-01

    Piezoelectric materials are widely used for microscale sensors and actuators but can pose material compatibility challenges. This paper reports a post-CMOS compatible fabrication process for piezoelectric sensors and actuators on silicon using only standard CMOS metals. The piezoelectric properties of aluminum nitride (AlN) deposited on titanium (Ti) by reactive sputtering are characterized and microcantilever actuators are demonstrated. The film texture of the polycrystalline Ti and AlN films is improved by removing the native oxide from the silicon substrate in situ and sequentially depositing the films under vacuum to provide a uniform growth surface. The piezoelectric properties for several AlN film thicknesses are measured using laser doppler vibrometry on unpatterned wafers and released cantilever beams. The film structure and properties are shown to vary with thickness, with values of d(33f), d(31) and d(33) of up to 2.9, -1.9 and 6.5 pm V(-1), respectively. These values are comparable with AlN deposited on a Pt metal electrode, but with the benefit of a fabrication process that uses only standard CMOS metals.

  1. A review: aluminum nitride MEMS contour-mode resonator

    Science.gov (United States)

    Yunhong, Hou; Meng, Zhang; Guowei, Han; Chaowei, Si; Yongmei, Zhao; Jin, Ning

    2016-10-01

    Over the past several decades, the technology of micro-electromechanical system (MEMS) has advanced. A clear need of miniaturization and integration of electronics components has had new solutions for the next generation of wireless communications. The aluminum nitride (AlN) MEMS contour-mode resonator (CMR) has emerged and become promising and competitive due to the advantages of the small size, high quality factor and frequency, low resistance, compatibility with integrated circuit (IC) technology, and the ability of integrating multi-frequency devices on a single chip. In this article, a comprehensive review of AlN MEMS CMR technology will be presented, including its basic working principle, main structures, fabrication processes, and methods of performance optimization. Among these, the deposition and etching process of the AlN film will be specially emphasized and recent advances in various performance optimization methods of the CMR will be given through specific examples which are mainly focused on temperature compensation and reducing anchor losses. This review will conclude with an assessment of the challenges and future trends of the CMR. Project supported by National Natural Science Foundation (Nos. 61274001, 61234007, 61504130), the Nurturing and Development Special Projects of Beijing Science and Technology Innovation Base's Financial Support (No. Z131103002813070), and the National Defense Science and Technology Innovation Fund of CAS (No. CXJJ-14-M32).

  2. Preparation and characterization of solid-state sintered aluminum ...

    Indian Academy of Sciences (India)

    AZO target; ZnAl2O4 spinel; resistivity; AZO thin film. 1. Introduction. Transparent conducting oxides ... (i) low cost, (ii) low growth temperature, (iii) non-toxicity, and (iv) easy adjustment of conductivity by adding ... strate via sputtering, a target with high sintering density is required. In this work, preparation of high quality AZO ...

  3. Spectral response characteristics of the transmission-mode aluminum gallium nitride photocathode with varying aluminum composition.

    Science.gov (United States)

    Hao, Guanghui; Liu, Junle; Ke, Senlin

    2017-12-10

    In order to research spectral response characteristics of transmission-mode nanostructure aluminum gallium nitride (AlGaN) photocathodes, the AlGaN photocathodes materials with varied aluminum (Al) composition were grown by metalorganic chemical vapor deposition (MOCVD) and its optical properties were measured. The Al compositions of each AlGaN film of the photocathodes were analyzed from their adsorption properties curves; their thickness was also calculated by the matrix formula of thin-film optics. The nanostructure AlGaN photocathodes were activated with the Caesium-Oxygen (Cs-O) alternation, and after the photocathode was packaged in vacuum, their spectrum responses were measured. The experimental results showed that the trend of spectrum response curves first increased and then decreased along with the increasing of the incident light wavelength. The peak spectrum response value was 17.5 mA/W at 255 nm, and its quantum efficiency was 8.5%. The lattice defects near the interface of the AlGaN heterostructure could impede the electron motion crossing this region and moving toward the photocathode surface; this was a factor that reduces the electron emission performance of the photocathodes. Also, the experimental result showed that the thickness of each AlGaN layer affected the electron diffusion characteristics; this was a key factor that influenced the spectrum response performance.

  4. Low temperature aluminum nitride thin films for sensory applications

    Energy Technology Data Exchange (ETDEWEB)

    Yarar, E.; Zamponi, C.; Piorra, A.; Quandt, E., E-mail: eq@tf.uni-kiel.de [Institute for Materials Science, Chair for Inorganic Functional Materials, Kiel University, D-24143 Kiel (Germany); Hrkac, V.; Kienle, L. [Institute for Materials Science, Chair for Synthesis and Real Structure, Kiel University, D-24143 Kiel (Germany)

    2016-07-15

    A low-temperature sputter deposition process for the synthesis of aluminum nitride (AlN) thin films that is attractive for applications with a limited temperature budget is presented. Influence of the reactive gas concentration, plasma treatment of the nucleation surface and film thickness on the microstructural, piezoelectric and dielectric properties of AlN is investigated. An improved crystal quality with respect to the increased film thickness was observed; where full width at half maximum (FWHM) of the AlN films decreased from 2.88 ± 0.16° down to 1.25 ± 0.07° and the effective longitudinal piezoelectric coefficient (d{sub 33,f}) increased from 2.30 ± 0.32 pm/V up to 5.57 ± 0.34 pm/V for film thicknesses in the range of 30 nm to 2 μm. Dielectric loss angle (tan δ) decreased from 0.626% ± 0.005% to 0.025% ± 0.011% for the same thickness range. The average relative permittivity (ε{sub r}) was calculated as 10.4 ± 0.05. An almost constant transversal piezoelectric coefficient (|e{sub 31,f}|) of 1.39 ± 0.01 C/m{sup 2} was measured for samples in the range of 0.5 μm to 2 μm. Transmission electron microscopy (TEM) investigations performed on thin (100 nm) and thick (1.6 μm) films revealed an (002) oriented AlN nucleation and growth starting directly from the AlN-Pt interface independent of the film thickness and exhibit comparable quality with the state-of-the-art AlN thin films sputtered at much higher substrate temperatures.

  5. Preparation and characterization of solid-state sintered aluminum ...

    Indian Academy of Sciences (India)

    Aluminum-doped zinc oxide (AZO) ceramics with 0−2.5 wt.% alumina (Al2O3) content were prepared using a solid-state reaction technique. It was found that AZO grains became finer in size and more irregular in shape than undoped ZnO as the Al2O3 content increased. Addition of Al2O3 dopant caused the formation of ...

  6. Evaluation of the Particle Bonding for Aluminum Sample Produced by Spark Plasma Sintering

    Science.gov (United States)

    Tünçay, Mehmet Masum; Nguyen, Lucie; Hendrickx, Philippe; Brochu, Mathieu

    2016-10-01

    Spark plasma sintering (SPS) is a powder metallurgy process that sinters powder materials within a short time by simultaneous application of electrical current and pressure. SPS differs from other conventional powder metallurgy processes by its heating mechanism, which is Joule heating of the sample within a graphite die. This study investigates the consolidation of aluminum powder by SPS. Different pressures were used and particle bonding evaluated by means of fracture surface analysis. Electrical resistance, obtained from online monitoring of the variation of voltage and current during the process, showed an enhanced descent at 0.3 T m, and the area under this drop was associated with ductility: the greater the area, the higher the ductility. This temperature corresponds to a significant increase in the hardness ratio of the oxide layer to aluminum, where breakdown of the oxide layer becomes easier, permitting enhanced metallurgical bonding between the powder particles.

  7. Microstructural analysis of sinterized aluminum powder obtained by the high energy milling of beverage cans

    International Nuclear Information System (INIS)

    Souza, Jose Raelson Pereira de; Peres, Mauricio Mhirdaui

    2016-01-01

    The objective is the study of the effect of high energy milling on the sintering of aluminum from beverage cans. The selected aluminum cans were cut and subjected to high energy milling under a common atmosphere (in the air). In milling, three grams of aluminum was used to maintain the ratio of 10/1 between the mass of the beads and the material. The milling time was varied in 1h, 1.5h and 2h, keeping the other variables constant. The particle size distribution was measured by laser granulometry, for further compaction and sintering at a temperature of 600 ° C for 2 h. The samples were characterized by scanning electron microscopy (SEM). The granulometric analysis of the powders found that higher milling times produced finer particles. Powders with granulometry of less than 45 μm were obtained at 1 h, 1.5 h and 2 h times. The times of 1.5h and 2h promoted finer particles with better distribution of size. The SEM analyzes showed little variation in the shape of the particles as a function of the variation of the grinding times, presenting irregularities in the platelet geometry. The sintering time and temperature were effective in the densification of the powder particles, which were influenced by the average particle size

  8. Aluminum Nitride Substrate Growth by Halide Vapor Transport Epitaxy

    National Research Council Canada - National Science Library

    Bliss, D. F; Tassev, V. L; Weyburne, D; Bailey, J. S

    2003-01-01

    .... This new technique eliminates the main difficulties of the conventional HVPE growth, where aluminum oxidation and the strong reactivity of aluminum chloride with quartz create the potential for oxygen contamination...

  9. Investigation of thermal conductivity and oxidation behaviour of reaction bonded aluminum nitride (RBAN) ceramics

    International Nuclear Information System (INIS)

    Salahi, E; Moztarzadeh, F.; Margoosian, V.; Heinrich, J. G.

    2003-01-01

    AlN samples have been produced by reaction bonding process using AlN and aluminum powders as starting materials. Different aluminum nitride and aluminum powders ratios were mixed in ethanol media, dried, isostatically and nitrided in (N 2 )atmosphere. Results showed that conversion of to AlN depends strongly on the amount of aluminum starting powder and decreased with increasing after a maximum at 25 Al wt %. Changing the particle size and morphology of the aluminum starting powder leads to change in the conversion ratio and microstructure of RBAN ceramics. Typical scanning electron micrographs of RBAN sample indicating primary and secondary aluminum nitride morphology and pore structure. The oxidation behavior of RABN samples showed the weight gain depends on the average particle size, morphology and amount of Al in starting mixture and pore structure. Samples have been manufactured with equi-axed morphology of Al starting powder have thermal conductivity higher than the samples have been manufactured with flake-like morphology. These differences were directly related to the different microstructure of RBAN samples

  10. Exploring Capacitance-Voltage measurements to find the Piezoelectric Coefficient of Aluminum Nitride

    NARCIS (Netherlands)

    van Hemert, T.; Sakriotis, D.; Hueting, Raymond Josephus Engelbart; Schmitz, Jurriaan

    2011-01-01

    In this work we explore an uncommon method to extract the piezoelectric coefficient of the piezoelectric material aluminum nitride. The method exploits the bias dependence of CV (capacitance voltage) measurements on M_M (metal-piezoelectric-metal) capacitors. We propose a bias dependent capacitance

  11. Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Harman, J.P.; Kabulski, A. (West Virginia U., Morgantown, WV); Pagan, V.R. (West Virginia U., Morgantown, WV); Famouri, K. (West Virginia U., Morgantown, WV); Kasarla, K.R.; Rodak, L.E. (West Virginia U., Morgantown, WV); Hensel, J.P.; Korakakis, D.

    2008-07-01

    The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

  12. Effect of contact metals on the piezoelectric properties of aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Harman, J.; Kabulski, A.; Pagán, V. R.; Famouri, P.; Kasarla, K. R.; Rodak, L. E.; Peter Hensel, J.; Korakakis, D.

    2008-01-01

    The converse piezoelectric response of aluminum nitride evaluated using standard metal insulator semiconductor structures has been found to exhibit a linear dependence on the work function of the metal used as the top electrode. The apparent d33 of the 150–1100 nm films also depends on the dc bias applied to the samples.

  13. Theoretical prediction of novel two-dimensional planar aluminum nitride allotropes: first principles calculations

    Science.gov (United States)

    Kazempour, Behnam; Safari, E. Keshavarz; Rostami, R.

    2018-03-01

    This paper uses first principles calculations based on density functional theory to predict the possibility or ability to synthesize two-dimensional planar allotropes of aluminum nitride, as well as study their structural and electronic properties. The investigated systems include six allotropes in which the atoms of aluminum and nitrogen participate in chemical bonds with sp 2 and sp 1 + sp 2 hybridization. After the structural relaxation, all these allotropes—despite being less stable than the graphene-like aluminum nitride allotrope—still retain their original structure. The degree of structural stability of these allotropes depends on the hybridization of the constituent atoms and the number density of atoms per unit cell. Regardless of the structure type and the hybridization of the atoms, all these allotropes are semiconductors; however, the amount and type of energy gap varies for different structures.

  14. Tribological Behavior of Spark Plasma Sintered Aluminum-Graphene Composites at Room and Elevated Temperatures

    Directory of Open Access Journals (Sweden)

    Sara Rengifo

    2017-01-01

    Full Text Available This study examines the role of Graphene nanoplatelets (GNPs as a solid lubricant additive to aluminum. Pure Al and Al-2 vol % GNP pellets are sintered by Spark Plasma Sintering (SPS. Their tribological properties are evaluated by a ball-on-disk tribometer at room temperature (RT and high temperature (200 °C. Al-2 vol % GNP composite displayed poor densification (91% and low hardness, resulting in poor wear resistance as compared to pure Al. However GNP addition resulted in a lower coefficient of friction (COF as compared to pure aluminum at both temperatures. The results demonstrated that GNPs contribute to reducing COF by forming a protective tribolayer. GNPs also play a unique role in reducing oxygen ingress at 200 °C. It is concluded that the packing density of a starting powder blend of Al-GNP needs to be improved by using irregular shaped aluminum powder mixed with both larger and smaller GNPs. This would result in greater densification and improve wear rate while maintaining low COF.

  15. Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

    National Research Council Canada - National Science Library

    Holmes, Kenneth

    2002-01-01

    Gallium Nitride (GaN) High Electron Mobility Transistors (HEMT's) are microwave power devices that have the performance characteristics to improve the capabilities of current and future Navy radar and communication systems...

  16. Synthesis and Characterization of Nano Boron Nitride Reinforced Magnesium Composites Produced by the Microwave Sintering Method

    Directory of Open Access Journals (Sweden)

    Manoj Gupta

    2013-05-01

    Full Text Available In this study, magnesium composites with nano-size boron nitride (BN particulates of varying contents were synthesized using the powder metallurgy (PM technique incorporating microwave-assisted two-directional sintering followed by hot extrusion. The effect of nano-BN addition on the microstructural and the mechanical behavior of the developed Mg/BN composites were studied in comparison with pure Mg using the structure-property correlation. Microstructural characterization revealed uniform distribution of nano-BN particulates and marginal grain refinement. The coefficient of thermal expansion (CTE value of the magnesium matrix was improved with the addition of nano-sized BN particulates. The results of XRD studies indicate basal texture weakening with an increase in nano-BN addition. The composites showed improved mechanical properties measured under micro-indentation, tension and compression loading. While the tensile yield strength improvement was marginal, a significant increase in compressive yield strength was observed. This resulted in the reduction of tension-compression yield asymmetry and can be attributed to the weakening of the strong basal texture.

  17. Polarity inversion of aluminum nitride by direct wafer bonding

    Science.gov (United States)

    Hayashi, Yusuke; Katayama, Ryuji; Akiyama, Toru; Ito, Tomonori; Miyake, Hideto

    2018-03-01

    A novel fabrication process based on direct bonding technologies is proposed and demonstrated to achieve polarity inversion in AlN. High-angle annular dark-field scanning transmission electron microscopy observation clearly showed an atomically flat bonding interface and an abrupt transition from Al polarity (+c) to N polarity (‑c) through a single monolayer. This ideal polarity inversion of III–nitride materials is expected to provide new insight into heteropolar device applications.

  18. Researching the Aluminum Nitride Etching Process for Application in MEMS Resonators

    Directory of Open Access Journals (Sweden)

    Jian Yang

    2015-02-01

    Full Text Available We investigated the aluminum nitride etching process for MEMS resonators. The process is based on Cl2/BCl3/Ar gas chemistry in inductively coupled plasma system. The hard mask of SiO2 is used. The etching rate, selectivity, sidewall angle, bottom surface roughness and microtrench are studied as a function of the gas flow rate, bias power and chamber pressure. The relations among those parameters are reported and theoretical analyses are given. By optimizing the etching parameters, the bottom surface roughness of 1.98 nm and the sidewall angle of 83° were achieved. This etching process can meet the manufacturing requirements of aluminum nitride MEMS resonator.

  19. Microwave energy attenuators on the basis of aluminum nitride with high level of microwave energy absorption

    Directory of Open Access Journals (Sweden)

    Chasnyk V. I.

    2014-08-01

    Full Text Available Results of experimental studies of aluminum nitride based composites with addition of silicon carbide and molybdenum having high microwave absorption are presented. The interconnection between high level of absorption and volume electrical resistance was observed: maximum absorption of 6.5±1,0 dB/mm corresponds to the electrical resistance of (4—5·105 Ohm·m. Level of absorption of 3.5±0,5 dB/mm is revealed for the dielectric material with electrical conductivity of 1012 Ohm·m. The patterns detected during the study allow to predict the minimum and maximum levels of absorption of microwave energy in the two-phase composites based on aluminum nitride with molybdenum or silicon carbide, based on the measured volume of electrical resistance.

  20. The use of aluminum nitride to improve Aluminum-26 Accelerator Mass Spectrometry measurements and production of Radioactive Ion Beams

    Science.gov (United States)

    Janzen, Meghan S.; Galindo-Uribarri, Alfredo; Liu, Yuan; Mills, Gerald D.; Romero-Romero, Elisa; Stracener, Daniel W.

    2015-10-01

    We present results and discuss the use of aluminum nitride as a promising source material for Accelerator Mass Spectrometry (AMS) and Radioactive Ion Beams (RIBs) science applications of 26Al isotopes. The measurement of 26Al in geological samples by AMS is typically conducted on Al2O3 targets. However, Al2O3 is not an ideal source material because it does not form a prolific beam of Al- required for measuring low-levels of 26Al. Multiple samples of aluminum oxide (Al2O3), aluminum nitride (AlN), mixed Al2O3-AlN as well as aluminum fluoride (AlF3) were tested and compared using the ion source test facility and the stable ion beam (SIB) injector platform at the 25-MV tandem electrostatic accelerator at Oak Ridge National Laboratory. Negative ion currents of atomic and molecular aluminum were examined for each source material. It was found that pure AlN targets produced substantially higher beam currents than the other materials and that there was some dependence on the exposure of AlN to air. The applicability of using AlN as a source material for geological samples was explored by preparing quartz samples as Al2O3 and converting them to AlN using a carbothermal reduction technique, which involved reducing the Al2O3 with graphite powder at 1600 °C within a nitrogen atmosphere. The quartz material was successfully converted to AlN. Thus far, AlN proves to be a promising source material and could lead towards increasing the sensitivity of low-level 26Al AMS measurements. The potential of using AlN as a source material for nuclear physics is also very promising by placing 26AlN directly into a source to produce more intense radioactive beams of 26Al.

  1. Ablation characteristics of aluminum oxide and nitride ceramics during femtosecond laser micromachining

    International Nuclear Information System (INIS)

    Kim, Sung Hoon; Sohn, Ik-Bu; Jeong, Sungho

    2009-01-01

    Femtosecond laser ablation of aluminum oxide (Al 2 O 3 ) and aluminum nitride (AlN) ceramics was performed under normal atmospheric conditions (λ = 785 nm, τ p = 185 fs, repetition rate = 1 kHz), and threshold laser fluencies for single- and multi-pulse ablation were determined. The ablation characteristics of the two ceramics showed similar trends except for surface morphologies, which revealed virtually no melting in Al 2 O 3 but clear evidence of melting for AlN. Based on subsequent X-ray photoelectron spectroscopy (XPS) analyses, the chemistry of these ceramics appeared to remain the same before and after femtosecond laser ablation.

  2. Microwave Study of Field-Effect Devices Based on Graphene/Aluminum Nitride/Graphene Structures.

    Science.gov (United States)

    Adabi, Mohammad; Lischner, Johannes; Hanham, Stephen M; Mihai, Andrei P; Shaforost, Olena; Wang, Rui; Hao, Ling; Petrov, Peter K; Klein, Norbert

    2017-03-09

    Metallic gate electrodes are often employed to control the conductivity of graphene based field effect devices. The lack of transparency of such electrodes in many optical applications is a key limiting factor. We demonstrate a working concept of a double layer graphene field effect device that utilizes a thin film of sputtered aluminum nitride as dielectric gate material. For this system, we show that the graphene resistance can be modified by a voltage between the two graphene layers. We study how a second gate voltage applied to the silicon back gate modifies the measured microwave transport data at around 8.7 GHz. As confirmed by numerical simulations based on the Boltzmann equation, this system resembles a parallel circuit of two graphene layers with different intrinsic doping levels. The obtained experimental results indicate that the graphene-aluminum nitride-graphene device concept presents a promising technology platform for terahertz- to- optical devices as well as radio-frequency acoustic devices where piezoelectricity in aluminum nitride can also be exploited.

  3. The thermal conductivity of embedded nano-aluminum nitride-doped multi-walled carbon nanotubes in epoxy composites containing micro-aluminum nitride particles.

    Science.gov (United States)

    Choi, Seran; Im, Hyungu; Kim, Jooheon

    2012-02-17

    Amino-functionalized nano-aluminum nitride (nano-AlN) particles were doped onto the surfaces of chlorinated multi-walled carbon nanotubes (MWCNTs) to act as fillers in thermally conducting composites. These synthesized materials were embedded in epoxy resin. Then, the untreated micro-aluminum nitride (micro-AlN) particles were added to this resin, whereby the composites filled with nano-AlN-doped MWCNTs (0, 0.5, 1, 1.5, 2 wt%) and micro-AlN (25.2, 44.1, 57.4 vol%) were fabricated. As a result, the thermal diffusivity and conductivity of all composites continuously improved with increasing nano-AlN-doped MWCNT content and micro-AlN filler loading. The thermal conductivity reached its maximum, which was 31.27 times that of the epoxy alone, when 2 wt% nano-AlN-doped MWCNTs and 57.4 vol% micro-AlN were added to the epoxy resin. This result is due to the high aspect ratio of the MWCNTs and the surface polarity of the doped nano-AlN and micro-AlN particles, resulting in the improved thermal properties of the epoxy composite.

  4. The thermal conductivity of embedded nano-aluminum nitride-doped multi-walled carbon nanotubes in epoxy composites containing micro-aluminum nitride particles

    International Nuclear Information System (INIS)

    Choi, Seran; Im, Hyungu; Kim, Jooheon

    2012-01-01

    Amino-functionalized nano-aluminum nitride (nano-AlN) particles were doped onto the surfaces of chlorinated multi-walled carbon nanotubes (MWCNTs) to act as fillers in thermally conducting composites. These synthesized materials were embedded in epoxy resin. Then, the untreated micro-aluminum nitride (micro-AlN) particles were added to this resin, whereby the composites filled with nano-AlN-doped MWCNTs (0, 0.5, 1, 1.5, 2 wt%) and micro-AlN (25.2, 44.1, 57.4 vol%) were fabricated. As a result, the thermal diffusivity and conductivity of all composites continuously improved with increasing nano-AlN-doped MWCNT content and micro-AlN filler loading. The thermal conductivity reached its maximum, which was 31.27 times that of the epoxy alone, when 2 wt% nano-AlN-doped MWCNTs and 57.4 vol% micro-AlN were added to the epoxy resin. This result is due to the high aspect ratio of the MWCNTs and the surface polarity of the doped nano-AlN and micro-AlN particles, resulting in the improved thermal properties of the epoxy composite. (paper)

  5. Polarity Control and Doping in Aluminum Gallium Nitride

    Science.gov (United States)

    2013-06-01

    Kontrolle der Polarität und Dotierung in Aluminium Gallium Nitrid vorgelegt von Diplom-Physiker Marc Patrick Hoffmann aus Berlin von der...that are either in metalorganic or hydride form. The MOCVD system is specifically designed for AlGaN alloy growth, including pure GaN and AlN. Both...free exciton transitions in nominally undoped GaN samples grown by hydride vapor phase epitaxy (HVPE) were found at 3.478 eV (FXA) and 3.484 eV (FXB

  6. Study of aluminum nitride precipitation in Fe- 3%Si steel

    Directory of Open Access Journals (Sweden)

    F.L. Alcântara

    2013-01-01

    Full Text Available For good performance of electrical steels it is necessary a high magnetic induction and a low power loss when submitted to cyclic magnetization. A fine dispersion of precipitates is a key requirement in the manufacturing process of Fe- 3%Si grain oriented electrical steel. In the production of high permeability grain oriented steel precipitate particles of copper and manganese sulphides and aluminium nitride delay normal grain growth during primary recrystallization, causing preferential growth of grains with Goss orientation during secondary recrystallization. The sulphides precipitate during the hot rolling process. The aluminium nitride particles are formed during hot rolling and the hot band annealing process. In this work AlN precipitation during hot deformation of a high permeability grain oriented 3%Si steel is examined. In the study, transfer bar samples were submitted to controlled heating, compression and cooling treatments in order to simulate a reversible hot rolling finishing. The samples were analyzed using the transmission electron microscope (TEM in order to identify the precipitates and characterize size distribution. Precipitate extraction by dissolution method and analyses by inductively coupled plasma optical emission spectrometry (ICP-OES were used to quantify the precipitation. The results allowed to describe the precipitation kinetics by a precipitation-time-temperature (PTT diagram for AlN formation during hot rolling.

  7. Fabrication of Aluminum Gallium Nitride/Gallium Nitride MESFET And It's Applications in Biosensing

    Science.gov (United States)

    Alur, Siddharth

    Gallium Nitride has been researched extensively for the past three decades for its application in Light Emitting Diodes (LED's), power devices and UV photodetectors. With the recent developments in crystal growth technology and the ability to control the doping there has been an increased interest in heterostructures formed between Gallium nitride and it's alloy Aluminium Gallium Nitride. These heterostructures due to the combined effect of spontaneous and piezoelectric effect can form a high density and a high mobility electron gas channel without any intentional doping. This high density electron gas makes these heterostructures ideal to be used as sensors. Gallium Nitride is also chemically very stable. Detection of biomolecules in a fast and reliable manner is very important in the areas of food safety and medical research. For biomolecular detection it is paramount to have a robust binding of the probes on the sensor surface. Therefore, in this dissertation, the fabrication and application of the AlGaN/GaN heterostructures as biological sensors for the detection of DNA and Organophosphate hydrolase enzyme is discussed. In order to use these AlGaN/GaN heterostructures as biological sensors capable of working in a liquid environment photodefinable polydimethyl-siloxane is used as an encapsulant. The immobilization conditions for a robust binding of thiolated DNA and the catalytic receptor enzyme organophosphate hydrolase on gold surfaces is developed with the help of X-ray photoelectron spectroscopy. DNA and OPH are detected by measuring the change in the drain current of the device as a function of time.

  8. Synthesis and characterization of alumina-coated aluminum sponges manufactured by sintering and dissolution process as possible structured reactors

    Energy Technology Data Exchange (ETDEWEB)

    Méndez, Franklin J., E-mail: fmendez@ivic.gob.ve [Centro de Química, Instituto Venezolano de Investigaciones Científicas, Apartado Postal 21827, Caracas 1020-A (Venezuela, Bolivarian Republic of); Rivero-Prince, Sayidh [Centro de Química, Instituto Venezolano de Investigaciones Científicas, Apartado Postal 21827, Caracas 1020-A (Venezuela, Bolivarian Republic of); Facultad de Ingeniería, Universidad Central de Venezuela, Caracas (Venezuela, Bolivarian Republic of); Escalante, Yelisbeth; Villasana, Yanet [Centro de Química, Instituto Venezolano de Investigaciones Científicas, Apartado Postal 21827, Caracas 1020-A (Venezuela, Bolivarian Republic of); Brito, Joaquín L., E-mail: joabrito@ivic.gob.ve [Centro de Química, Instituto Venezolano de Investigaciones Científicas, Apartado Postal 21827, Caracas 1020-A (Venezuela, Bolivarian Republic of)

    2016-03-01

    Al{sub 2}O{sub 3}–Al sponges were manufactured by sintering and dissolution process with the aim of using these materials as structured catalytic reactors. For this purpose, several synthesis conditions were examined for the design of the cellular material, such as: particle size of NaCl, weight fraction of Al, compaction pressure, and sintering temperature or time. An alumina layers was grown on top of the aluminum surfaces during both: sintering and thermal treatment. The obtained results showed that the synthesized materials could be promising as structured reactors for endothermic or exothermic reactions. - Highlights: • An efficient method for manufactured of aluminum sponges is reported. • Methods for productions of superficial Al{sub 2}O{sub 3} are studied. • Al{sub 2}O{sub 3}–Al sponges could be used as structured reactors.

  9. Progress in efficient doping of high aluminum-containing group III-nitrides

    Science.gov (United States)

    Liang, Y.-H.; Towe, E.

    2018-03-01

    The group III-nitride (InN, GaN, and AlN) class of semiconductors has become one of two that are critical to a number of technologies in modern life—the other being silicon. Light-emitting diodes made from (In,Ga)N, for example, dominate recent innovations in general illumination and signaling. Even though the (In,Ga)N materials system is fairly well established and widely used in advanced devices, challenges continue to impede development of devices that include aluminum-containing nitride films such as (Al,Ga)N. The main difficulty is efficient doping of films with aluminum-rich compositions; the problem is particularly severe for p-type doping, which is essential for Ohmic contacts to bipolar device structures. This review briefly summarizes the fundamental issues related to p-type doping, and then discusses a number of approaches that are being pursued to resolve the doping problem or for circumventing the need for p-type doping. Finally, we discuss an approach to doping under liquid-metal-enabled growth by molecular beam epitaxy. Recent results from a number of groups appear to indicate that p-type doping of nitride films under liquid-metal-enabled growth conditions might offer a solution to the doping problem—at least for materials grown by molecular beam epitaxy.

  10. Characterization of an aluminum-filled polyamide powder for applications in selective laser sintering

    International Nuclear Information System (INIS)

    Mazzoli, Alida; Moriconi, Giacomo; Pauri, Marco Giuseppe

    2007-01-01

    Solid free-form fabrication (SFF) techniques use layer-based manufacturing to create physical objects directly from computer-generated models. Using an additive approach to manufacture shapes, SFF systems join liquid, powder or sheet materials. Selective laser sintering (SLS) is a SFF technique by which parts are built layer-by-layer offering the key advantage of the direct manufacturing of functional parts. In SLS, a laser beam is traced over the surface of a tightly compacted powder made of thermoplastic material. In this paper is characterized a new aluminum-filled polyamide powder developed for applications in SLS. This material is promising for many applications that require a metallic look of the part, good finishing properties, high stiffness and higher part quality

  11. Investigation on microstructural and mechanical properties of B4C–aluminum matrix composites prepared by microwave sintering

    Directory of Open Access Journals (Sweden)

    Ehsan Ghasali

    2015-10-01

    Full Text Available B4C reinforced aluminum composites were fabricated by microwave heating of the mixture of B4C (10, 15 and 20 wt% and aluminum powders at 650, 750, 850 and 950 °C. The effect of different amounts of B4C on the microstructure and mechanical properties of aluminum matrix was examined. The maximum bending (238 ± 10 MPa and compressive strength (330 ± 10 MPa values were measured for composites sintered at 950 and 750 °C, respectively. The maximum hardness (112 Vickers was measured for Al–20 wt% B4C composite sintered at 850 °C. XRD investigations showed the decomposition of boron carbide and also the formation of Al3BC by heating the composites at 850 °C. SEM micrographs showed uniform distribution of reinforcement particles in Al matrix.

  12. Thermal Stability of Silver Paste Sintering on Coated Copper and Aluminum Substrates

    Science.gov (United States)

    Pei, Chun; Chen, Chuantong; Suganuma, Katsuaki; Fu, Guicui

    2018-01-01

    The thermal stability of silver (Ag) paste sintering on coated copper (Cu) and aluminum (Al) substrates has been investigated. Instead of conventional zincating or nickel plating, magnetron sputtering was used to achieve coating with titanium (Ti) and Ag. Silicon (Si) chips were bonded to coated Cu and Al substrates using a mixture of submicron Ag flakes and particles under 250°C and 0.4 MPa for 30 min. The joints were then subject to aging testing at 250°C for duration of 200 h, 500 h, and 1000 h. Two types of joints exhibited satisfactory initial shear strength above 45 MPa. However, the shear strength of the joints on Al substrate decreased to 28 MPa after 1000 h of aging, while no shear strength decline was detected for the joints on Cu substrate. Fracture surface analysis revealed that the vulnerable points of the two types of joints were (1) the Ag layer and (2) the interface between the Ti layer and Cu substrate. Based on the results of scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDS), and simulations, cracks in the Ag layer were identified as the cause of the shear strength degradation in the joints on Al substrate. The interface evolution of the joints on Cu substrate was ascribed to Cu migration and discontinuity points that initialized in the Ti layer. This study reveals that Al exhibited superior thermal stability with sintered Ag paste.

  13. Toughening effect of multi-walled boron nitride nanotubes and their influence on the sintering behaviour of 3Y-TZP zirconia ceramics

    Czech Academy of Sciences Publication Activity Database

    Tatarko, Peter; Grasso, S.; Chlup, Zdeněk; Porwal, H.; Kasiarova, M.; Dlouhý, Ivo; Reece, M.J.

    2014-01-01

    Roč. 34, č. 7 (2014), s. 1829-1843 ISSN 0955-2219 EU Projects: European Commission(XE) 264526 - GLACERCO Institutional support: RVO:68081723 Keywords : Zirconia * Boron nitride nanotubes * Composite * Spark plasma sintering * Toughening mechanism Subject RIV: JI - Composite Materials Impact factor: 2.947, year: 2014

  14. Bonding Properties of Aluminum Nitride at High Pressure.

    Science.gov (United States)

    Liu, Zhao; Li, Da; Wei, Shuli; Wang, Wenjie; Tian, Fubo; Bao, Kuo; Duan, Defang; Yu, Hongyu; Liu, Bingbing; Cui, Tian

    2017-07-03

    Exploring the bonding properties and polymerization mechanism of stable polymeric nitrogen phases is the main goal of our high-pressure study. The pressure versus composition phase diagram of the Al-N system is established. In addition to the known Fm3̅m phase of AlN, a notable monoclinic phase with N 6 6- anion polymeric nitrogen chains for AlN 3 in the pressure range from 43 to 85 GPa is predicted. Its energy density is up to 2.75 kJ·g -1 , and the weight ratio of nitrogen is nearly 61%, which make it potentially interesting for the industrial applications as a high energy density material. The high-pressure studies of atomic and electronic structures in this predicted phase reveal that the formation of N 6 6- anion is driven by the sp 2 hybridization of nitrogen atoms. The resonance effect between alternating π-bonds and σ-bonds in polymeric nitrogen chains are all responsible for the structural stability. Because of the electrons transfer from aluminums to polymeric nitrogen chains, there is a pseudogap in the electronic structures of AlN 3 . The N_p electrons form π-type chemical bonds with the neighboring atoms, resulting in the delocalization of π electrons and charge transfer in polymeric nitrogen chains. Furthermore, disparities of charge density distribution between nitrogen atoms in polymeric nitrogen chains are the principal reason for the metallicity.

  15. Measurements of frequency fluctuations in aluminum nitride contour-mode resonators.

    Science.gov (United States)

    Miller, Nicholas; Piazza, Gianluca

    2014-06-01

    As part of the current drive to engineer miniaturized monolithic high-performance microelectromechanical-enabled oscillators, there is a need for further study of frequency fluctuations in microelectromechanical resonators. To this end, we present the measurement of frequency fluctuations for 128 aluminum nitride contour-mode resonators. The measurements show that fluctuations are sufficiently large to play an important role in oscillator performance. These results were obtained for the first time from vector network analyzer measurements and are accompanied by an analysis of the experimental setup.

  16. Electrical tuning and switching of an optical frequency comb generated in aluminum nitride microring resonators.

    Science.gov (United States)

    Jung, Hojoong; Fong, King Y; Xiong, Chi; Tang, Hong X

    2014-01-01

    Aluminum nitride (AlN) has been shown to possess both strong Kerr nonlinearity and electro-optic Pockels effect. By combining these two effects, here we demonstrate on-chip reversible on/off switching of the optical frequency comb generated by an AlN microring resonator. We optimize the design of gating electrodes and the underneath resonator structure to effectively apply an electric field without increasing the optical loss. The switching of the comb is monitored by measuring one of the frequency comb peaks while varying the electric field. The controlled comb electro-optic response is investigated for direct comparison with the transient thermal effect.

  17. Pulsed DC magnetron sputtered piezoelectric thin film aluminum nitride – Technology and piezoelectric properties

    Energy Technology Data Exchange (ETDEWEB)

    Stoeckel, C., E-mail: chris.stoeckel@zfm.tu-chemnitz.de; Kaufmann, C.; Hahn, R.; Schulze, R. [Center for Microtechnologies, Chemnitz University of Technology, Chemnitz 09126 (Germany); Billep, D. [Fraunhofer Institute for Electronic Nano Systems (ENAS), Chemnitz 09126 (Germany); Gessner, T. [Center for Microtechnologies, Chemnitz University of Technology, Chemnitz 09126 (Germany); Fraunhofer Institute for Electronic Nano Systems (ENAS), Chemnitz 09126 (Germany)

    2014-07-21

    Pulsed DC magnetron sputtered aluminum nitride (AlN) thin films are prepared on several seed layers and at different sputtering conditions. The piezoelectric c-axis (002) orientation of the AlN is analyzed with X-ray diffraction method. The transverse piezoelectric coefficient d{sub 31} is determined with a Laser-Doppler-Vibrometer at cantilevers and membranes by analytical calculations and finite element method. Additionally, thin film AlN on bulk silicon is used to characterize the longitudinal piezoelectric charge coefficient d{sub 33}.

  18. Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites.

    Directory of Open Access Journals (Sweden)

    Khaled Sayed Elbadawi Ramadan

    Full Text Available Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002 crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m(-2 and 0.9±0.1 C m(-2, for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

  19. Low Temperature Reactive Sputtering of Thin Aluminum Nitride Films on Metallic Nanocomposites.

    Science.gov (United States)

    Ramadan, Khaled Sayed Elbadawi; Evoy, Stephane

    2015-01-01

    Piezoelectric aluminum nitride thin films were deposited on aluminum-molybdenum (AlMo) metallic nanocomposites using reactive DC sputtering at room temperature. The effect of sputtering parameters on film properties was assessed. A comparative study between AlN grown on AlMo and pure aluminum showed an equivalent (002) crystallographic texture. The piezoelectric coefficients were measured to be 0.5±0.1 C m(-2) and 0.9±0.1 C m(-2), for AlN deposited on Al/0.32Mo and pure Al, respectively. Films grown onto Al/0.32Mo however featured improved surface roughness. Roughness values were measured to be 1.3nm and 5.4 nm for AlN films grown on AlMo and on Al, respectively. In turn, the dielectric constant was measured to be 8.9±0.7 for AlN deposited on Al/0.32Mo seed layer, and 8.7±0.7 for AlN deposited on aluminum; thus, equivalent within experimental error. Compatibility of this room temperature process with the lift-off patterning of the deposited AlN is also reported.

  20. Laser sintering of magnesia with nanoparticles of iron oxide and aluminum oxide

    Energy Technology Data Exchange (ETDEWEB)

    García, L.V.; Mendivil, M.I.; Roy, T.K. Das; Castillo, G.A. [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Cd. Universitaria, San Nicolas de los Garza, Nuevo Leon 66451 (Mexico); Shaji, S., E-mail: sshajis@yahoo.com [Facultad de Ingenieria Mecanica y Electrica, Universidad Autonoma de Nuevo Leon, Av. Pedro de Alba s/n, Cd. Universitaria, San Nicolas de los Garza, Nuevo Leon 66451 (Mexico); CIIDIT, Universidad Autonoma de Nuevo Leon, Apodaca, Nuevo Leon (Mexico)

    2015-05-01

    Highlights: • Laser sintered MgO pellets with nanoparticles of Al{sub 2}O{sub 3} and Fe{sub 2}O{sub 3}. • Characterized these pellets by XRD, SEM and XPS. • Spinel formations were observed in both cases. • Changes in morphology and structure were analyzed. - Abstract: Nanoparticles of iron oxide (Fe{sub 2}O{sub 3}, 20–40 nm) and aluminum oxide (Al{sub 2}O{sub 3}, 50 nm) were mixed in different concentrations (3, 5 and 7 wt%) in a magnesium oxide (MgO) matrix. The mixture pellet was irradiated with 532 nm output from a Q-switched Nd:YAG laser using different laser fluence and translation speed for sintering. The refractory samples obtained were analyzed using X-ray diffraction technique, scanning electron microscopy and X-ray photoelectron spectroscopy. The results showed that the samples irradiated at translation speed of 110 μm/s and energy fluence of 1.7 J/cm{sup 2} with a concentration of 5 and 7 wt% of Fe{sub 2}O{sub 3} presented the MgFe{sub 2}O{sub 4} spinel-type phase. With the addition of Al{sub 2}O{sub 3} nanoparticles, at a translation speed of 110 μm/s and energy fluence of 1.7 J/cm{sup 2}, there were the formations of MgAl{sub 2}O{sub 4} spinel phase. The changes in morphologies and microstructure due to laser irradiation were analyzed.

  1. Aluminum Nitride Micro-Channels Grown via Metal Organic Vapor Phase Epitaxy for MEMs Applications

    Energy Technology Data Exchange (ETDEWEB)

    Rodak, L.E.; Kuchibhatla, S.; Famouri, P.; Ting, L.; Korakakis, D.

    2008-01-01

    Aluminum nitride (AlN) is a promising material for a number of applications due to its temperature and chemical stability. Furthermore, AlN maintains its piezoelectric properties at higher temperatures than more commonly used materials, such as Lead Zirconate Titanate (PZT) [1, 2], making AlN attractive for high temperature micro and nanoelectromechanical (MEMs and NEMs) applications including, but not limited to, high temperature sensors and actuators, micro-channels for fuel cell applications, and micromechanical resonators. This work presents a novel AlN micro-channel fabrication technique using Metal Organic Vapor Phase Epitaxy (MOVPE). AlN easily nucleates on dielectric surfaces due to the large sticking coefficient and short diffusion length of the aluminum species resulting in a high quality polycrystalline growth on typical mask materials, such as silicon dioxide and silicon nitride [3,4]. The fabrication process introduced involves partially masking a substrate with a silicon dioxide striped pattern and then growing AlN via MOVPE simultaneously on the dielectric mask and exposed substrate. A buffered oxide etch is then used to remove the underlying silicon dioxide and leave a free standing AlN micro-channel. The width of the channel has been varied from 5 ìm to 110 ìm and the height of the air gap from 130 nm to 800 nm indicating the stability of the structure. Furthermore, this versatile process has been performed on (111) silicon, c-plane sapphire, and gallium nitride epilayers on sapphire substrates. Reflection High Energy Electron Diffraction (RHEED), Atomic Force Microscopy (AFM), and Raman measurements have been taken on channels grown on each substrate and indicate that the substrate is influencing the growth of the AlN micro-channels on the SiO2 sacrificial layer.

  2. Estudo da oxidação de cerâmicas à base de carbeto de silício sinterizado via fase líquida utilizando nitreto de alumínio e óxido de ítrio como aditivos Study of oxidation in liquid phase sintered silicon carbide with addition of aluminum nitride and yttrium oxide

    Directory of Open Access Journals (Sweden)

    M. J. Bondioli

    2008-06-01

    Full Text Available Materiais cerâmicos à base de carbeto de silício foram desenvolvidos através de sinterização via fase líquida usando AlN-Y2O3 como sistema de aditivos. Duas composições foram desenvolvidas utilizando pós de SiC e diferentes teores de AlN e Y2O3. Os pós foram misturados e homogeneizados, secados e subseqüentemente desaglomerados. As misturas do pó foram compactadas por prensagem uniaxial com subseqüente prensagem isostática a frio e os compactos foram sinterizados a 2080 ºC, por 1 h, em atmosfera 0,2 MPa de N2. As amostras sinterizadas foram caracterizadas por difração de raios X e pela sua densidade relativa. O comportamento da oxidação foi investigado e relacionado ao teor de aditivos. Para tanto, as amostras foram submetidas aos ensaios de oxidação em temperaturas de 1200, 1300 e 1400 ºC, ao ar por 120 h. O ganho de massa das amostras foi traçado em função do tempo de exposição, obtendo a evolução da oxidação na superfície das amostras. A composição das fases cristalinas presentes nas superfícies oxidadas foi obtida utilizando difração de raios X. Baseados nos resultados foram determinados os coeficientes de crescimento parabólico da taxa de oxidação referentes a cada composição estudada. Os resultados indicam que as amostras apresentam oxidação com comportamento parabólico em todas as condições, sendo que as amostras contendo menor quantidade de Y2O3 em relação ao AlN apresentaram maior resistência a oxidação quando submetidas a temperatura de 1200 ºC; porém com o aumento da temperatura para 1400 ºC, as amostras contendo maior quantidade de Y2O3 em relação ao AlN apresentaram maior resistência à oxidação, fato relacionado com as fases intergranulares presentes no sistema, após a sinterização.Silicon carbide (SiC ceramics were developed by liquid phase sintering using AlN-Y2O3 as additive. Two compositions were obtained using different AlN-Y2O3 contents. The powders were mixed

  3. Site-selective biofunctionalization of aluminum nitride surfaces using patterned organosilane self-assembled monolayers.

    Science.gov (United States)

    Chiu, Chi-Shun; Lee, Hong-Mao; Gwo, Shangjr

    2010-02-16

    Surface biochemical functionalization of group-III nitride semiconductors has recently attracted much interest because of their biocompatibility, nontoxicity, and long-term chemical stability under demanding physiochemical conditions for chemical and biological sensing. Among III-nitrides, aluminum nitride (AlN) and aluminum gallium nitride (AlGaN) are particularly important because they are often used as the sensing surfaces for sensors based on field-effect transistor or surface acoustic wave (SAW) sensor structures. To demonstrate the possibility of site-selective biofunctionalization on AlN surfaces, we have fabricated two-dimensional antibody micropatterns on AlN surfaces by using patterned self-assembled monolayer (SAM) templates. Patterned SAM templates are composed of two types of organosilane molecules terminated with different functional groups (amino and methyl), which were fabricated on AlN/sapphire substrates by combining photolithography, lift-off process, and self-assembly technique. Because the patterned SAM templates have different surface properties on the same surface, clear imaging contrast of SAM micropatterns can be observed by field-emission scanning electron microscopy (FE-SEM) operating at a low accelerating voltage in the range of 0.5-1.5 kV. Furthermore, the contrast in surface potential of the binary SAM microstructures was confirmed by selective adsorption of negatively charged colloidal gold nanoparticles (AuNPs). The immobilization of AuNPs was limited on the positively charged amino-terminated regions, while they were scarcely found on the surface regions terminated by methyl groups. In this work, selective immobilization of green fluorescent protein (GFP) antibodies was demonstrated by the specific protein binding of enhanced GFP (EGFP) labeling. The observed strong fluorescent signal from antibody functionalized regions on the SAM-patterned AlN surface indicates the retained biological activity of specific molecular recognition

  4. Kinetic of sintering of polyethilene glycol and lanthanum dopped aluminum oxide obtained by the sol-gel method

    Directory of Open Access Journals (Sweden)

    Novaković Tatjana B.

    2011-01-01

    Full Text Available Sintering and crystallization of low-density polyethylene glycol (PEG and lanthanum, La(III-doped Al2O3 aerogels prepared from aluminum isopropoxide were investigated. The sintering behavior of non-doped and doped aerogels was examined by following the change of specific surface area with isothermal heat-treatment. The specific surface area and crystalline phases of non-doped and PEG+La(III-doped aerogels were determined, and the effects of dopants on the sintering and crystallization of Al2O3 aerogels are discussed. Isothermal sintering experiments showed that the sintering mechanism of non-doped and PEG+La(III-doped Al2O3 aerogels is surface diffusion. The specific surface areas of alumina samples decrease rapidly during the initial period of sintering, and more slowly with prolonged sintering time. The change of the porous structure is correlated with the phase transformation of γ-Al2O3 during calcinations of Al2O3 aerogels. The surface area of non-doped Al2O3 aerogels came to about 20 m2g-1 with heat-treatment at 1100°C because of crystallization of α-Al2O3 after densification. In the case of heattreatment at 1200°C, the largest surface area was observed for PEG+La(III doped Al2O3 aerogels and the XRD pattern showed only low ordered θ-Al2O3. These indicate that the addition of PEG+La(III to boehmite sol prevents Al2O3 aerogels from sintering and crystallizing to the α-Al2O3 phase. Even after 20 h at 1000°C, PEG+La (III-doped alumina samples maintain a rather good specific surface area (108 m2 g-1 in comparison to the non-doped, containing mainly θ-Al2O3 and minor amounts of δ-Al2O3. Aluminum-oxides with these structural and textural properties are widely used as a coatings and catalyst supports in the field of various catalysis.

  5. Estudo do nitreto de alumínio para aplicações termo-mecânicas Study of aluminum nitride for thermomechanical applications

    Directory of Open Access Journals (Sweden)

    S. A. Baldacim

    2005-12-01

    Full Text Available O nitreto de alumínio é muito utilizado como material semicondutor em dispositivos óptico-eletrônicos na qual sua alta condutividade térmica permite uma boa dissipação de calor. Por outro lado, devido à alta resistência mecânica e boa estabilidade estrutural à alta temperatura, tem sido crescente o seu estudo para aplicações termo-mecânica levando em considerações os avanços tecnológicos no processamento e caracterização destes materiais. Neste trabalho serão apresentados os resultados dos estudos de prensagem a quente do nitreto de alumínio aditivado com 5%, 10% e 20% de uma mistura contendo Al2O3 + Y2O3. A massa específica foi determinada de acordo com a norma ASTM C20-87, as fases presentes por difração de raios X e as análises microestruturais por microscopia eletrônica de varredura. A microdureza e tenacidade à fratura foram avaliadas pelo método de indentação Vickers. Os resultados promissores alcançados de densificação, próximos à densidade teórica, e propriedades mecânicas, mostraram a viabilidade da utilização do AlN em aplicações estruturais.Aluminum nitride is applied as semiconductor material in optical-electronic devices due to its high thermal conductivity and high heat dissipation. On the other hand, due to high mechanical strength and high-temperature structural stability this material has been studied for thermomechanical application. In this work the results of the physical and mechanical properties of aluminum nitride sintered by hot uniaxial pressing with 5%, 10% and 20% of YAG (Al2O3+Y2O3 additions are presented. The specific mass was determined by ASTM C20-87 standard, crystalline phases identified by X-ray diffraction and microstructural analysis performed by scanning electron microscopy. The microhardness and fracture toughness values were determined on the polished surface, at room temperature, using Vickers indentation method. The excellent results obtained for densification and

  6. Micromechanical and Electrical Properties of Monolithic Aluminum Nitride at High Temperatures

    Science.gov (United States)

    Goldsby, Jon C.

    2001-01-01

    Micromechanical spectroscopy of aluminum nitride reveals it to possess extremely low background internal friction at less than 1 x 10 (exp -4) logarithmic decrement (log dec.) from 20 to 1200 C. Two mechanical loss peaks were observed, the first at 350 C approximating a single Debye peak with a peak height of 60 x 10 (exp -4) log dec. The second peak was seen at 950 C with a peak height of 20 x 10 (exp -4) log dec. and extended from 200 to over 1200 C. These micromechanical observations manifested themselves in the electrical behavior of these materials. Electrical conduction processes were predominately intrinsic. Both mechanical and electrical relaxations appear to be thermally activated processes, with activation energies of 0.78 and 1.32 eV respectively.

  7. Two-dimensional analysis of spurious modes in aluminum nitride film resonators.

    Science.gov (United States)

    Gong, Xun; Han, Min; Shang, Xiaoli; Xiong, Jun; Duan, Jie; Sekimoto, Hitoshi

    2007-06-01

    In this paper, a hybrid method, which combines the traditional concept of guided waves and the finite element method (FEM), is proposed to analyze the spurious modes of aluminum nitride (AIN) film with electrodes. First, the guided wave modes in the plated area are obtained by 1-D FEM. Second, a mode-match method is used to satisfy the boundary conditions. The vibration of the film resonator is a superposition of all of the guided modes. With respect to an A1N film resonator, which is a thickness-stretch mode resonator, we have identified three families of spurious modes: extension, thickness-stretch, and thickness-shear. The spectrum of spurious modes is calculated and the influence of the spurious modes is discussed.

  8. Analysis of Aluminum-Nitride SOI for High-Temperature Electronics

    Science.gov (United States)

    Biegel, Bryan A.; Osman, Mohamed A.; Yu, Zhiping

    2000-01-01

    We use numerical simulation to investigate the high-temperature (up to 500K) operation of SOI MOSFETs with Aluminum-Nitride (AIN) buried insulators, rather than the conventional silicon-dioxide (SiO2). Because the thermal conductivity of AIN is about 100 times that of SiO2, AIN SOI should greatly reduce the often severe self-heating problem of conventional SOI, making SOI potentially suitable for high-temperature applications. A detailed electrothermal transport model is used in the simulations, and solved with a PDE solver called PROPHET In this work, we compare the performance of AIN-based SOI with that of SiO2-based SOI and conventional MOSFETs. We find that AIN SOI does indeed remove the self-heating penalty of SOL However, several device design trade-offs remain, which our simulations highlight.

  9. Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique

    Science.gov (United States)

    Rodak, L. E.; Korakakis, D.

    2011-04-01

    This work investigates the use of a digital growth technique as a viable method for achieving high-quality aluminum gallium nitride (Al x Ga1- x N) films via metalorganic vapor-phase epitaxy. Digital alloys are superlattice structures with period thicknesses of a few monolayers. Alloys with an AlN mole fraction ranging from 0.1 to 0.9 were grown by adjusting the thickness of the AlN layer in the superlattice. High-resolution x-ray diffraction was used to determine the superlattice period and c-lattice parameter of the structure, while reciprocal-space mapping was used to determine the a-lattice parameter and evaluate growth coherency. A comparison of the measured lattice parameter with both the nominal value and also the underlying buffer layer is discussed.

  10. Aluminum nitride as nonlinear optical material for on-chip frequency comb generation and frequency conversion

    Directory of Open Access Journals (Sweden)

    Jung Hojoong

    2016-06-01

    Full Text Available A number of dielectric materials have been employed for on-chip frequency comb generation. Silicon based dielectrics such as silicon dioxide (SiO2 and silicon nitride (SiN are particularly attractive comb materials due to their low optical loss and maturity in nanofabrication. They offer third-order Kerr nonlinearity (χ(3, but little second-order Pockels (χ(2 effect. Materials possessing both strong χ(2 and χ(3 are desired to enable selfreferenced frequency combs and active control of comb generation. In this review, we introduce another CMOS-compatible comb material, aluminum nitride (AlN,which offers both second and third order nonlinearities. A review of the advantages of AlN as linear and nonlinear optical material will be provided, and fabrication techniques of low loss AlN waveguides from the visible to infrared (IR region will be discussed.We will then show the frequency comb generation including IR, red, and green combs in high-Q AlN micro-rings from single CW IR laser input via combination of Kerr and Pockels nonlinearity. Finally, the fast speed on-off switching of frequency comb using the Pockels effect of AlN will be shown,which further enriches the applications of the frequency comb.

  11. Reactive Spark Plasma Sintering (SPS) of Nitride Reinforced Titanium Alloy Composites (Postprint)

    Science.gov (United States)

    2014-08-15

    their wear and fatigue resistance, hard coatings for dental implants and dental surgery tools, tribological orthopedic devices, gears, valves, pumps...SPS) of blended titanium and vanadium elemen- tal powders, leading to a new class of nitride reinforced titanium alloy composites. The resulting micro ...for structural [15] aerospace [2–5], marine [16], automotive, biomedical (such as in dental and orthopedic as bone implants) [1–6,8–12,15–20], and

  12. Hot-pressed silicon nitride with various lanthanide oxides as sintering additives

    Science.gov (United States)

    Ueno, K.; Toibana, Y.

    1984-01-01

    The effects of addition of various lanthanide oxides and their mixture with Y2O3 on the sintering of Si3N4 were investigated. The addition of simple and mixed lanthanide oxides promoted the densification of Si3N4 in hot-pressing at 1800 C under 300-400kg/ centimeters squared for 60 min. The crystallization of yttrium and lanthanide-silicon oxynitrides which was observed inn the sintered body containing yttrium-lanthanide mixed oxides as additives led to the formation of a highly refractory Si3N4 ceramic having a bending strength of 82 and 84 kg/millimeters squared at room temperature and 1300 C respectively. In a Y2O3+La2O3 system, a higher molar ratio of La2O3 to Y2O3 gave a higher hardness and strength at high temperatures. It was found that 90 min was an optimum sintering time for the highest strength.

  13. Effect of argon ion beam voltages on the microstructure of aluminum nitride films prepared at room temperature by a dual ion beam sputtering system

    International Nuclear Information System (INIS)

    Chen, H.-Y.; Han Sheng; Cheng, C.-H.; Shih, H.C.

    2004-01-01

    Aluminum nitride (AlN) films were successfully deposited at room temperature onto p-type (1 0 0) silicon wafers by manipulating argon ion beam voltages in a dual ion beam sputtering (DIBS). X-ray diffraction spectra showed that aluminum nitride films could be synthesized above 800 V. The (0 0 2) orientation was dominant at 800 V, above which the orientation was random. The atomic force microscope (AFM) images displayed a relatively smooth surface with the root-mean-square roughness of 2-3 nm, where this roughness decreased with argon ion beam voltage. The Al 2p 3/2 and N 1s spectra indicated that both the aluminum-aluminum bond and aluminum-nitrogen bond appeared at 600 V, above which only the aluminum-nitrogen bond was detected. Moreover, the atomic concentration in aluminum nitride films was concentrated in aluminum-rich phases in all cases. Nevertheless, the aluminum concentration markedly increased with argon ion beam voltages below 1000 V, above which the concentration decreased slightly. The correlation between the microstructure of aluminum nitride films and argon ion beam voltages is also discussed

  14. Aluminum Nitride Hydrolysis Enabled by Hydroxyl-Mediated Surface Proton Hopping.

    Science.gov (United States)

    Bartel, Christopher J; Muhich, Christopher L; Weimer, Alan W; Musgrave, Charles B

    2016-07-20

    Aluminum nitride (AlN) is used extensively in the semiconductor industry as a high-thermal-conductivity insulator, but its manufacture is encumbered by a tendency to degrade in the presence of water. The propensity for AlN to hydrolyze has led to its consideration as a redox material for solar thermochemical ammonia (NH3) synthesis applications where AlN would be intentionally hydrolyzed to produce NH3 and aluminum oxide (Al2O3), which could be subsequently reduced in nitrogen (N2) to reform AlN and reinitiate the NH3 synthesis cycle. No quantitative, atomistic mechanism by which AlN, and more generally, metal nitrides react with water to become oxidized and generate NH3 yet exists. In this work, we used density-functional theory (DFT) to examine the reaction mechanisms of the initial stages of AlN hydrolysis, which include: water adsorption, hydroxyl-mediated proton diffusion to form NH3, and NH3 desorption. We found activation barriers (Ea) for hydrolysis of 330 and 359 kJ/mol for the cases of minimal adsorbed water and additional adsorbed water, respectively, corroborating the high observed temperatures for the onset of steam AlN hydrolysis. We predict AlN hydrolysis to be kinetically limited by the dissociation of strong Al-N bonds required to accumulate protons on surface N atoms to form NH3. The hydrolysis mechanism we elucidate is enabled by the diffusion of protons across the AlN surface by a hydroxyl-mediated Grotthuss mechanism. A comparison between intrinsic (Ea = 331 kJ/mol) and mediated proton diffusion (Ea = 89 kJ/mol) shows that hydroxyl-mediated proton diffusion is the predominant mechanism in AlN hydrolysis. The large activation barrier for NH3 generation from AlN (Ea = 330 or 359 kJ/mol, depending on water coverage) suggests that in the design of materials for solar thermochemical ammonia synthesis, emphasis should be placed on metal nitrides with less covalent metal-nitrogen bonds and, thus, more-facile NH3 liberation.

  15. Nitrides

    International Nuclear Information System (INIS)

    Uehlls, A.

    1987-01-01

    The structure and certain properties of the ionic and covalent nitrides of alkali earth, rare earth, transition elements, cadmium, boron, indium and thorium are considered briefly. Peculiarities of the crystal structure, the structure of coordinated polyhedrons, the character and parameters of chemical bond depending on nitride composition are discussed

  16. The effects of substrates on the geometry and optical properties of aluminum nitride nanowires.

    Science.gov (United States)

    Gharavi, Mohammad Amin; Haratizadeh, Hamid; Kitai, Adrian; Moafi, Ali

    2012-12-01

    Based on a Chemical Vapor Deposition (CVD) process, an alumina tube electric furnace was assembled to synthesize different one dimensional aluminum nitride (AIN) nanostructures via aluminum powder and nitrogen gas flow. The products obtained where nanowires, nanorods, a unique chain-linked nanocage structure made from an entanglement of AIN nanowires and an interesting micro-sized spherical architecture. The different growth parameters dictated to the system result the product variety, making structure tuning possible. The incorporation of different substrates (silicon and alumina) not only leads to the formation of different shaped structures, but also results different optical emissions ranging from 450 nm (blue) to 650 nm (red), indicating the high potential of AIN nanostructures in LED fabrication. Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), Selective Area Electron Diffraction (SAED), X-ray Diffraction (XRD), Photoluminescence (PL) and Energy Dispersive X-ray (EDX) analysis results are discussed and a Vapor-Liquid-Solid (VLS)/Vapor-Solid (VS) based growth mechanism is proposed for the mentioned structures.

  17. Identification of crack path of inter- and transgranular fractures in sintered silicon nitride by in situ TEM.

    Science.gov (United States)

    Ii, Seiichiro; Iwamoto, Chihiro; Matsunaga, Katsuyuki; Yamamoto, Takahisa; Ikuhara, Yuichi

    2004-01-01

    Inter- and/or transgranular crack paths in sintered silicon nitride (Si3N4) during fracture were investigated by in situ straining experiments in a transmission electron microscope at room temperature, using a high-precision micro-indenter. By this technique, cracks introduced in an in situ manner were observed to propagate in the grain interior and along grain boundaries. High-resolution electron microscopy (HREM) observation revealed that the crack propagation takes place at an interface between Si3N4 grains and an intergranular glassy film (IGF) in the case of intergranular fractures. According to the results by previous molecular dynamics simulations, a number of dangling bonds are present at the Si3N4/IGF interface, which should result in the observed fracture behavior at the interface. On the other hand, the crack path introduced during transgranular fracture of Si3N4 grains was found to be sharp and straight. The observed crack propagated towards [1120] inside the Si3N4 grain with the crack surface parallel to the (1100) plane. The HREM observations of crack walls revealed them to be atomically flat. The atomic termination of the crack walls was identified in combination with image simulations based on atomic models of the cleaved crack walls.

  18. Very large mode area ytterbium fiber amplifier with aluminum-doped pump cladding made by powder sinter technology

    International Nuclear Information System (INIS)

    He, Wenbin; Leich, Martin; Grimm, Stephan; Kobelke, Jens; Zhu, Yuan; Bartelt, Hartmut; Jäger, Matthias

    2015-01-01

    We demonstrate amplification experiments using a very large mode area Yb-doped double-clad fiber with 100 µm aluminum-cer codoped core and 440 µm pump cladding realized by high aluminum codoping. The material for core and pump cladding was fabricated by reactive powder sinter technology. A high numerical aperture (NA) of the pump cladding with NA = 0.21 and a low one of the core with NA = 0.084 could be realized. Using a 0.55 m short fiber sample as the main amplifier in a three-stage ns pulsed fiber master oscillator power amplifier system we achieved 3 ns, 2 mJ output pulses with 360 kW peak power limited by the available pump power. Stimulated Raman scattering effects and amplified spontaneous emission were successfully suppressed. (letter)

  19. In-resonator variation of waveguide cross-sections for dispersion control of aluminum nitride micro-rings.

    Science.gov (United States)

    Jung, Hojoong; Poot, Menno; Tang, Hong X

    2015-11-30

    We propose and demonstrate a dispersion control technique by combination of different waveguide cross sections in an aluminum nitride micro-ring resonator. Narrow and wide waveguides with normal and anomalous dispersion, respectively, are linked with tapering waveguides and enclosed in a ring resonator to produce a total dispersion near zero. The mode-coupling in multimoded waveguides is also effectively suppressed. This technique provides new degrees of freedom and enhanced flexibility in engineering the dispersion of microcomb resonators.

  20. Optical properties of aluminum nitride thin films grown by direct-current magnetron sputtering close to epitaxy

    Energy Technology Data Exchange (ETDEWEB)

    Stolz, A. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Soltani, A., E-mail: ali.soltani@iemn.univ-lille1.fr [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Abdallah, B. [Department of Materials Physics, Atomic Energy Commission of Syria, Damascus, P.O. Box 6091 (Syrian Arab Republic); Charrier, J. [Fonctions Optiques pour les Technologies de l' informatiON (FOTON), UMR CNRS 6082, 6, rue de Kerampont CS 80518, 22305 Lannion Cedex (France); Deresmes, D. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France); Jouan, P.-Y.; Djouadi, M.A. [Institut des Matériaux Jean Rouxel – IMN, UMR CNRS 6502, 2, rue de la Houssinère BP 32229, 44322 Nantes (France); Dogheche, E.; De Jaeger, J.-C. [Institut d' Electronique de Microélectronique et de Nanotechnologie (IEMN), UMR CNRS 8520, PRES Lille, Université Nord de France, Avenue Poincaré, 59652 Villeneuve d' Ascq Cedex (France)

    2013-05-01

    Low-temperature Aluminum Nitride (AlN) thin films with a thickness of 3 μm were deposited by Direct-Current magnetron sputtering on sapphire substrate. They present optical properties similar to those of epitaxially grown films. Different characterization methods such as X-Ray Diffraction, Transmission Electron Microscopy and Atomic Force Microscopy were used to determine the structural properties of the films such as its roughness and crystallinity. Newton interferometer was used for stress measurement of the films. Non-destructive prism-coupling technique was used to determine refractive index and thickness homogeneity by a mapping on the whole sample area. Results show that AlN films grown on AlGaN layer have a high crystallinity close to epitaxial films, associated to a low intrinsic stress for low thickness. These results highlight that it is possible to grow thick sample with microstructure and optical properties close to epitaxy, even on a large surface. - Highlights: ► Aluminum Nitride sputtering technique with a low temperature growth process ► Epitaxial quality of two microns sputtered Aluminum Nitride film ► Optics as a non-destructive accurate tool for acoustic wave investigation.

  1. Measurements of Powder-Polymer Mixture Properties and Their Use in Powder Injection Molding Simulations for Aluminum Nitride

    Science.gov (United States)

    Kate, Kunal H.; Onbattuvelli, Valmikanathan P.; Enneti, Ravi K.; Lee, Shi W.; Park, Seong-Jin; Atre, Sundar V.

    2012-09-01

    Aluminum nitride has been favored for applications in manufacturing substrates for heat sinks due to its elevated temperature operability, high thermal conductivity, and low thermal expansion coefficient. Powder injection molding is a high-volume manufacturing technique that can translate these useful material properties into complex shapes. In order to design and fabricate components from aluminum nitride, it is important to know the injection-molding behavior at different powder-binder compositions. However, the lack of a materials database for design and simulation at different powder-polymer compositions is a significant barrier. In this paper, a database of rheological and thermal properties for aluminum nitride-polymer mixtures at various volume fractions of powder was compiled from experimental measurements. This database was used to carry out mold-filling simulations to understand the effects of powder content on the process parameters and defect evolution during the injection-molding process. The experimental techniques and simulation tools can be used to design new materials, select component geometry attributes, and optimize process parameters while eliminating expensive and time-consuming trial-and-error practices prevalent in the area of powder injection molding.

  2. Impact of annealing temperature on the mechanical and electrical properties of sputtered aluminum nitride thin films

    Energy Technology Data Exchange (ETDEWEB)

    Gillinger, M.; Schneider, M.; Bittner, A.; Schmid, U. [Institute of Sensor and Actuator Systems, Vienna University of Technology, Vienna 1040 (Austria); Nicolay, P. [CTR Carinthian Tech Research AG, Villach 9524 (Austria)

    2015-02-14

    Aluminium nitride (AlN) is a promising material for challenging sensor applications such as process monitoring in harsh environments (e.g., turbine exhaust), due to its piezoelectric properties, its high temperature stability and good thermal match to silicon. Basically, the operational temperature of piezoelectric materials is limited by the increase of the leakage current as well as by enhanced diffusion effects in the material at elevated temperatures. This work focuses on the characterization of aluminum nitride thin films after post deposition annealings up to temperatures of 1000 °C in harsh environments. For this purpose, thin film samples were temperature loaded for 2 h in pure nitrogen and oxygen gas atmospheres and characterized with respect to the film stress and the leakage current behaviour. The X-ray diffraction results show that AlN thin films are chemically stable in oxygen atmospheres for 2 h at annealing temperatures of up to 900 °C. At 1000 °C, a 100 nm thick AlN layer oxidizes completely. For nitrogen, the layer is stable up to 1000 °C. The activation energy of the samples was determined from leakage current measurements at different sample temperatures, in the range between 25 and 300 °C. Up to an annealing temperature of 700 °C, the leakage current in the thin film is dominated by Poole-Frenkel behavior, while at higher annealing temperatures, a mixture of different leakage current mechanisms is observed.

  3. Processing of Silver-Implanted Aluminum Nitride for Energy Harvesting Devices

    Science.gov (United States)

    Alleyne, Fatima Sierre

    One of the more attractive sources of green energy has roots in the popular recycling theme of other green technologies, now known by the term "energy scavenging." In its most promising conformation, energy scavenging converts cyclic mechanical vibrations in the environment or random mechanical pressure pulses, caused by sources ranging from operating machinery to human footfalls, into electrical energy via piezoelectric transducers. While commercial piezoelectrics have evolved to favor lead zirconate titanate (PZT) for its combination of superior properties, the presence of lead in these ceramic compounds raises resistance to their application in anything "green" due to potential health implications during their manufacturing, recycling, or in-service application, if leaching occurs. Therefore in this study we have pursued the application of aluminum nitride (AlN) as a non-toxic alternative to PZT, seeking processing pathways to augment the modest piezoelectric performance of AlN and exploit its compatibility with complementary-metal-oxide semiconductor (CMOS) manufacturing. Such piezoelectric transducers have been categorized as microelectromechanical systems (MEMS), which despite more than a decade of research in this field, is plagued by delamination at the electrode/piezoelectric interface. Consequently the electric field essential to generate and sustain the piezoelectric response of these devices is lost, resulting in device failure. Working on the hypothesis that buried conducting layers can both mitigate the delamination problem and generate sufficient electric field to engage the operation of resonator devices, we have undertaken a study of silver ion implantation to experimentally assess its feasibility. As with most ion implantation procedures employed in semiconductor fabrication, the implanted sample is subjected to a thermal treatment, encouraging diffusion-assisted precipitation of the implanted species at high enough concentrations. The objective

  4. High-Temperature Dielectric Properties of Aluminum Nitride Ceramic for Wireless Passive Sensing Applications.

    Science.gov (United States)

    Liu, Jun; Yuan, Yukun; Ren, Zhong; Tan, Qiulin; Xiong, Jijun

    2015-09-08

    The accurate characterization of the temperature-dependent permittivity of aluminum nitride (AlN) ceramic is quite critical to the application of wireless passive sensors for harsh environments. Since the change of the temperature-dependent permittivity will vary the ceramic-based capacitance, which can be converted into the change of the resonant frequency, an LC resonator, based on AlN ceramic, is prepared by the thick film technology. The dielectric properties of AlN ceramic are measured by the wireless coupling method, and discussed within the temperature range of 12 °C (room temperature) to 600 °C. The results show that the extracted relative permittivity of ceramic at room temperature is 2.3% higher than the nominal value of 9, and increases from 9.21 to 10.79, and the quality factor Q is decreased from 29.77 at room temperature to 3.61 at 600 °C within the temperature range.

  5. Helical growth of aluminum nitride: new insights into its growth habit from nanostructures to single crystals.

    Science.gov (United States)

    Zhang, Xing-Hong; Shao, Rui-Wen; Jin, Lei; Wang, Jian-Yu; Zheng, Kun; Zhao, Chao-Liang; Han, Jie-Cai; Chen, Bin; Sekiguchi, Takashi; Zhang, Zhi; Zou, Jin; Song, Bo

    2015-05-15

    By understanding the growth mechanism of nanomaterials, the morphological features of nanostructures can be rationally controlled, thereby achieving the desired physical properties for specific applications. Herein, the growth habits of aluminum nitride (AlN) nanostructures and single crystals synthesized by an ultrahigh-temperature, catalyst-free, physical vapor transport process were investigated by transmission electron microscopy. The detailed structural characterizations strongly suggested that the growth of AlN nanostructures including AlN nanowires and nanohelixes follow a sequential and periodic rotation in the growth direction, which is independent of the size and shape of the material. Based on these experimental observations, an helical growth mechanism that may originate from the coeffect of the polar-surface and dislocation-driven growth is proposed, which offers a new insight into the related growth kinetics of low-dimensional AlN structures and will enable the rational design and synthesis of novel AlN nanostructures. Further, with the increase of temperature, the growth process of AlN grains followed the helical growth model.

  6. Wettability Investigations and Wet Transfer Enhancement of Large-Area CVD-Graphene on Aluminum Nitride.

    Science.gov (United States)

    Knapp, Marius; Hoffmann, René; Cimalla, Volker; Ambacher, Oliver

    2017-08-18

    The two-dimensional and virtually massless character of graphene attracts great interest for radio frequency devices, such as surface and bulk acoustic wave resonators. Due to its good electric conductivity, graphene might be an alternative as a virtually massless electrode by improving resonator performance regarding mass-loading effects . We report on an optimization of the commonly used wet transfer technique for large-area graphene, grown via chemical vapor deposition, onto aluminum nitride (AlN), which is mainly used as an active, piezoelectric material for acoustic devices. Today, graphene wet transfer is well-engineered for silicon dioxide (SiO₂). Investigations on AlN substrates reveal highly different surface properties compared to SiO₂ regarding wettability, which strongly influences the quality of transferred graphene monolayers. Both physical and chemical effects of a plasma treatment of AlN surfaces change wettability and avoid large-scale cracks in the transferred graphene sheet during desiccation. Spatially-resolved Raman spectroscopy reveals a strong strain and doping dependence on AlN plasma pretreatments correlating with the electrical conductivity of graphene. In our work, we achieved transferred crack-free large-area (40 × 40 mm²) graphene monolayers with sheet resistances down to 350 Ω/sq. These achievements make graphene more powerful as an eco-friendly and cheaper replacement for conventional electrode materials used in radio frequency resonator devices.

  7. Aluminum nitride-on-sapphire platform for integrated high-Q microresonators.

    Science.gov (United States)

    Liu, Xianwen; Sun, Changzheng; Xiong, Bing; Wang, Lai; Wang, Jian; Han, Yanjun; Hao, Zhibiao; Li, Hongtao; Luo, Yi; Yan, Jianchang; Wei, Tongbo; Zhang, Yun; Wang, Junxi

    2017-01-23

    We demonstrate aluminum nitride (AlN) on sapphire as a novel platform for integrated optics. High-confinement AlN microring resonators are realized by adopting a partially etched (pedestal) waveguide to relax the required etching selectivity for exact pattern transfer. A wide taper is employed at the chip end facets to ensure a low fiber-to-chip coupling loss of ~2.8 dB/facet for both transverse-electric (TE) and transverse-magnetic (TM) modes. Furthermore, the intrinsic quality factors (Qint) recorded with a high-resolution linewidth measurement are up to ~2.5 and 1.9 million at telecom band for fundamental TE00 and TM00 modes, corresponding to a low intracavity propagation loss of ~0.14 and 0.2 dB/cm as well as high resonant buildup of 473 and 327, respectively. Such high-Q AlN-on-sapphire microresonators are believed to be very promising for on-chip nonlinear optics.

  8. High-Temperature Dielectric Properties of Aluminum Nitride Ceramic for Wireless Passive Sensing Applications

    Directory of Open Access Journals (Sweden)

    Jun Liu

    2015-09-01

    Full Text Available The accurate characterization of the temperature-dependent permittivity of aluminum nitride (AlN ceramic is quite critical to the application of wireless passive sensors for harsh environments. Since the change of the temperature-dependent permittivity will vary the ceramic-based capacitance, which can be converted into the change of the resonant frequency, an LC resonator, based on AlN ceramic, is prepared by the thick film technology. The dielectric properties of AlN ceramic are measured by the wireless coupling method, and discussed within the temperature range of 12 °C (room temperature to 600 °C. The results show that the extracted relative permittivity of ceramic at room temperature is 2.3% higher than the nominal value of 9, and increases from 9.21 to 10.79, and the quality factor Q is decreased from 29.77 at room temperature to 3.61 at 600 °C within the temperature range.

  9. Mechanical, Corrosion and Biological Properties of Room-Temperature Sputtered Aluminum Nitride Films with Dissimilar Nanostructure.

    Science.gov (United States)

    Besleaga, Cristina; Dumitru, Viorel; Trinca, Liliana Marinela; Popa, Adrian-Claudiu; Negrila, Constantin-Catalin; Kołodziejczyk, Łukasz; Luculescu, Catalin-Romeo; Ionescu, Gabriela-Cristina; Ripeanu, Razvan-George; Vladescu, Alina; Stan, George E

    2017-11-17

    Aluminum Nitride (AlN) has been long time being regarded as highly interesting material for developing sensing applications (including biosensors and implantable sensors). AlN, due to its appealing electronic properties, is envisaged lately to serve as a multi-functional biosensing platform. Although generally exploited for its intrinsic piezoelectricity, its surface morphology and mechanical performance (elastic modulus, hardness, wear, scratch and tensile resistance to delamination, adherence to the substrate), corrosion resistance and cytocompatibility are also essential features for high performance sustainable biosensor devices. However, information about AlN suitability for such applications is rather scarce or at best scattered and incomplete. Here, we aim to deliver a comprehensive evaluation of the morpho-structural, compositional, mechanical, electrochemical and biological properties of reactive radio-frequency magnetron sputtered AlN nanostructured thin films with various degrees of c -axis texturing, deposited at a low temperature (~50 °C) on Si (100) substrates. The inter-conditionality elicited between the base pressure level attained in the reactor chamber and crystalline quality of AlN films is highlighted. The potential suitability of nanostructured AlN (in form of thin films) for the realization of various type of sensors (with emphasis on bio-sensors) is thoroughly probed, thus unveiling its advantages and limitations, as well as suggesting paths to safely exploit the remarkable prospects of this type of materials.

  10. Structure design of a high-performance aluminum nitride differential resonant accelerometer

    Science.gov (United States)

    Lei, Qiang; Gao, Yang; Zhang, Da-peng

    2017-11-01

    A high-performance aluminum nitride (AlN) differential resonant accelerometer is proposed. The inertia force of the proof mass is amplified to improve the sensitivity by two-stage microlever; the cross sensitivity is reduced by I-shape supporting beam; and the differential frequency detection scheme is used to decrease the effect of temperature common mode error. The accelerometer is mainly composed of proof mass, supporting beam, two-stage microlever and resonator, and its structural parameters are optimized by theoretical analysis and finite element simulation. The modal analysis shows that the fundamental frequencies of the two resonators are approximately 373.3 kHz, and the frequency differences from the interferential modes are about 9.4 kHz, which effectively achieves mode isolation. According to the simulation results of sensitivity, the sensitivity, linearity and cross sensitivity of AlN differential resonator accelerometer are 64.6 Hz/g, 0.787% and 0.0033 Hz/g, respectively. The simulation results of thermal stress show that the temperature sensitivity of a single resonator is about 490 Hz/°C, and the temperature sensitivity of output differential frequency is - 0.83 Hz/°C, which demonstrate that the differential frequency detection scheme can reduce the influence of temperature common mode error. All the above simulation results prove that this structural design of the accelerometer is feasible.

  11. Piezoelectric actuated micro-resonators based on the growth of diamond on aluminum nitride thin films.

    Science.gov (United States)

    Hees, J; Heidrich, N; Pletschen, W; Sah, R E; Wolfer, M; Williams, O A; Lebedev, V; Nebel, C E; Ambacher, O

    2013-01-18

    Unimorph heterostructures based on piezoelectric aluminum nitride (AlN) and diamond thin films are highly desirable for applications in micro- and nanoelectromechanical systems. In this paper, we present a new approach to combine thin conductive boron-doped as well as insulating nanocrystalline diamond (NCD) with sputtered AlN films without the need for any buffer layers between AlN and NCD or polishing steps. The zeta potentials of differently treated nanodiamond (ND) particles in aqueous colloids are adjusted to the zeta potential of AlN in water. Thereby, the nucleation density for the initial growth of diamond on AlN can be varied from very low (10(8) cm(-2)), in the case of hydrogen-treated ND seeding particles, to very high values of 10(11) cm(-2) for oxidized ND particles. Our approach yielding high nucleation densities allows the growth of very thin NCD films on AlN with thicknesses as low as 40 nm for applications such as microelectromechanical beam resonators. Fabricated piezo-actuated micro-resonators exhibit enhanced mechanical properties due to the incorporation of boron-doped NCD films. Highly boron-doped NCD thin films which replace the metal top electrode offer Young's moduli of more than 1000 GPa.

  12. Laterally vibrating resonator based elasto-optic modulation in aluminum nitride

    Directory of Open Access Journals (Sweden)

    Siddhartha Ghosh

    2016-06-01

    Full Text Available An integrated strain-based optical modulator driven by a piezoelectric laterally vibrating resonator is demonstrated. The composite structure consists of an acoustic Lamb wave resonator, in which a photonic racetrack resonator is internally embedded to enable overlap of the guided optical mode with the induced strain field. Both types of resonators are defined in an aluminum nitride (AlN thin film, which rests upon a layer of silicon dioxide in order to simultaneously define optical waveguides, and the structure is released from a silicon substrate. Lateral vibrations produced by the acoustic resonator are transferred through a partially etched layer of AlN, producing a change in the effective index of the guided wave through the interaction of the strain components with the AlN elasto-optic (p coefficients. Optical modulation through the elasto-optic effect is demonstrated at electromechanically actuated frequencies of 173 MHz and 843 MHz. This device geometry further enables the development of MEMS-based optical modulators in addition to studying elasto-optic interactions in suspended piezoelectric thin films.

  13. Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources.

    Science.gov (United States)

    Zhao, S; Connie, A T; Dastjerdi, M H T; Kong, X H; Wang, Q; Djavid, M; Sadaf, S; Liu, X D; Shih, I; Guo, H; Mi, Z

    2015-02-16

    Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al(Ga)N planar devices drastically decays when approaching the AlN end, including low internal quantum efficiencies (IQEs) and high device operation voltages. Here we show that these challenges can be addressed by utilizing nitrogen (N) polar Al(Ga)N nanowires grown directly on Si substrate. By carefully tuning the synthesis conditions, a record IQE of 80% can be realized with N-polar AlN nanowires, which is nearly ten times higher compared to high quality planar AlN. The first 210 nm emitting AlN nanowire light emitting diodes (LEDs) were achieved, with a turn on voltage of about 6 V, which is significantly lower than the commonly observed 20 - 40 V. This can be ascribed to both efficient Mg doping by controlling the nanowire growth rate and N-polarity induced internal electrical field that favors hole injection. In the end, high performance N-polar AlGaN nanowire LEDs with emission wavelengths covering the UV-B/C bands were also demonstrated.

  14. Design of defect spins in piezoelectric aluminum nitride for solid-state hybrid quantum technologies.

    Science.gov (United States)

    Seo, Hosung; Govoni, Marco; Galli, Giulia

    2016-02-15

    Spin defects in wide-band gap semiconductors are promising systems for the realization of quantum bits, or qubits, in solid-state environments. To date, defect qubits have only been realized in materials with strong covalent bonds. Here, we introduce a strain-driven scheme to rationally design defect spins in functional ionic crystals, which may operate as potential qubits. In particular, using a combination of state-of-the-art ab-initio calculations based on hybrid density functional and many-body perturbation theory, we predicted that the negatively charged nitrogen vacancy center in piezoelectric aluminum nitride exhibits spin-triplet ground states under realistic uni- and bi-axial strain conditions; such states may be harnessed for the realization of qubits. The strain-driven strategy adopted here can be readily extended to a wide range of point defects in other wide-band gap semiconductors, paving the way to controlling the spin properties of defects in ionic systems for potential spintronic technologies.

  15. Nanopatterned aluminum nitride template for high efficiency light-emitting diodes.

    Science.gov (United States)

    Kim, Sang-Mook; Park, Tae-Young; Park, Seong-Ju; Lee, Seung-Jae; Baek, Jong Hyeob; Park, Yun Chang; Jung, Gun Young

    2009-08-17

    Nanopatterned aluminum nitride (NP-AlN) templates were used to enhance the light extraction efficiency of the light-emitting diodes (LEDs). Here, the NP-AlN interlayer between the sapphire substrate and GaN-based LED was used as an effective light outcoupling layer at the direction of bottom side and as a buffer layer for growth of GaN LEDs. The cross-sectional transmission electron microscopy (TEM) analysis showed that the formation of stacking faults and voids could help reduce the threading dislocations. Micro Raman spectra also revealed that the GaN-based epilayer grown on the NP-AlN template had smaller residual stress than that grown on a planar sapphire substrate. The normalized electroluminescence (EL) spectra at the top and bottom sides of device revealed that the enhancement of the bottom side emission of the LED with the NP-AlN interlayer was more notable than a planar sapphire substrate due to the graded-refractive-index (GRIN) effect of the NP-AlN. (c) 2009 Optical Society of America

  16. Electric field effect on (6,0) zigzag single-walled aluminum nitride nanotube.

    Science.gov (United States)

    Baei, Mohammad T; Peyghan, Ali Ahmadi; Moghimi, Masoumeh

    2012-09-01

    Structural, electronic, and electrical responses of the H-capped (6,0) zigzag single-walled aluminum nitride nanotube was studied under the parallel and transverse electric fields with strengths 0-140 × 10(-4) a.u. by using density functional calculations. Geometry optimizations were carried out at the B3LYP/6-31G* level of theory using a locally modified version of the GAMESS electronic structure program. The dipole moments, atomic charge variations, and total energy of the (6,0) zigzag AlNNT show increases with increase in the applied external electric field strengths. The length, tip diameters, electronic spatial extent, and molecular volume of the nanotube do not significantly change with increasing electric field strength. The energy gap of the nanotube decreases with increases of the electric field strength and its reactivity is increased. Increase of the ionization potential, electron affinity, chemical potential, electrophilicity, and HOMO and LUMO in the nanotube with increase of the applied parallel electric field strengths shows that the parallel field has a much stronger interaction with the nanotube with respect to the transverse electric field strengths. Analysis of the parameters indicates that the properties of AlNNTs can be controlled by the proper external electric field.

  17. MEMS flexible artificial basilar membrane fabricated from piezoelectric aluminum nitride on an SU-8 substrate

    Science.gov (United States)

    Jang, Jongmoon; Jang, Jeong Hun; Choi, Hongsoo

    2017-07-01

    In this paper, we present a flexible artificial basilar membrane (FABM) that mimics the passive mechanical frequency selectivity of the basilar membrane. The FABM is composed of a cantilever array made of piezoelectric aluminum nitride (AlN) on an SU-8 substrate. We analyzed the orientations of the AlN crystals using scanning electron microscopy and x-ray diffraction. The AIN crystals are oriented in the c-axis (0 0 2) plane and effective piezoelectric coefficient was measured as 3.52 pm V-1. To characterize the frequency selectivity of the FABM, mechanical displacements were measured using a scanning laser Doppler vibrometer. When electrical and acoustic stimuli were applied, the measured resonance frequencies were in the ranges of 663.0-2369 Hz and 659.4-2375 Hz, respectively. These results demonstrate that the mechanical frequency selectivity of this piezoelectric FABM is close to the human communication frequency range (300-3000 Hz), which is a vital feature of potential auditory prostheses.

  18. Mechanical, Corrosion and Biological Properties of Room-Temperature Sputtered Aluminum Nitride Films with Dissimilar Nanostructure

    Directory of Open Access Journals (Sweden)

    Cristina Besleaga

    2017-11-01

    Full Text Available Aluminum Nitride (AlN has been long time being regarded as highly interesting material for developing sensing applications (including biosensors and implantable sensors. AlN, due to its appealing electronic properties, is envisaged lately to serve as a multi-functional biosensing platform. Although generally exploited for its intrinsic piezoelectricity, its surface morphology and mechanical performance (elastic modulus, hardness, wear, scratch and tensile resistance to delamination, adherence to the substrate, corrosion resistance and cytocompatibility are also essential features for high performance sustainable biosensor devices. However, information about AlN suitability for such applications is rather scarce or at best scattered and incomplete. Here, we aim to deliver a comprehensive evaluation of the morpho-structural, compositional, mechanical, electrochemical and biological properties of reactive radio-frequency magnetron sputtered AlN nanostructured thin films with various degrees of c-axis texturing, deposited at a low temperature (~50 °C on Si (100 substrates. The inter-conditionality elicited between the base pressure level attained in the reactor chamber and crystalline quality of AlN films is highlighted. The potential suitability of nanostructured AlN (in form of thin films for the realization of various type of sensors (with emphasis on bio-sensors is thoroughly probed, thus unveiling its advantages and limitations, as well as suggesting paths to safely exploit the remarkable prospects of this type of materials.

  19. Optimation of Sputtering Process Parameters on the Deposition of Nitride Titanium Thin Layer on Aluminum Alloys

    International Nuclear Information System (INIS)

    Tjipto Sujitno; Agus Santoso; Wiryoadi; Sayono; Bambang Siswanto; Lely Susita RM

    2002-01-01

    Research on the optimization of sputtering process parameters on the deposition of nitride titanium thin layer on aluminum alloys has been carried out. The aim of this research is to get the optimum conditions of the process parameters. The parameters of the process are ratio of sputter gas (Ar) and dopant (Nitrogen) gas, time of the process (t), temperature (T), electrode distance, electrode voltage and vacuum conditions of the process. In this experiment the electrode distance and electrode voltage are constants i.e.: 4 cm, 1.5 kV and 2.0 x 10 -1 torr, respectively. To examine the results, it was characterized its hardness, wear and corrosion resistance. It's found that optimum conditions was achieved at the ratio of Ar:N 2 = 5:7, t = 3 hours, T= 100 o C and vacuum conditions 2 x 10 -2 torr. At the optimum conditions, the hardness increases from 120.33 KHN to 149.59 KHN or there is an increasing in hardness in order of 24.32 %, the wear resistance increases from 1 x 10 -4 g/minutes to 6 x 10 -5 g/minutes or there is an increasing in wear resistance in order of 40.00 %, and the corrosion resistance in diluted sea water 1000 times media increases from 6.22 mpy to 0.68 mpy or there is an increasing in corrosion resistance in order of 811.76 %. (author)

  20. Structural and chemical analysis of annealed plasma-enhanced atomic layer deposition aluminum nitride films

    Energy Technology Data Exchange (ETDEWEB)

    Broas, Mikael, E-mail: mikael.broas@aalto.fi; Vuorinen, Vesa [Department of Electrical Engineering and Automation, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sippola, Perttu; Pyymaki Perros, Alexander; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University, P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland); Sajavaara, Timo [Department of Physics, University of Jyväskylä, P.O. Box 35, FIN-40014 Jyväskylä (Finland); Paulasto-Kröckel, Mervi [Department of Electrical Engineering and Automation, Aalto University. P.O. Box 13500, FIN-00076 Aalto, Espoo (Finland)

    2016-07-15

    Plasma-enhanced atomic layer deposition was utilized to grow aluminum nitride (AlN) films on Si from trimethylaluminum and N{sub 2}:H{sub 2} plasma at 200 °C. Thermal treatments were then applied on the films which caused changes in their chemical composition and nanostructure. These changes were observed to manifest in the refractive indices and densities of the films. The AlN films were identified to contain light element impurities, namely, H, C, and excess N due to nonideal precursor reactions. Oxygen contamination was also identified in the films. Many of the embedded impurities became volatile in the elevated annealing temperatures. Most notably, high amounts of H were observed to desorb from the AlN films. Furthermore, dinitrogen triple bonds were identified with infrared spectroscopy in the films. The triple bonds broke after annealing at 1000 °C for 1 h which likely caused enhanced hydrolysis of the films. The nanostructure of the films was identified to be amorphous in the as-deposited state and to become nanocrystalline after 1 h of annealing at 1000 °C.

  1. Exploiting elastic anharmonicity in aluminum nitride matrix for phase-synchronous frequency reference generation

    Science.gov (United States)

    Ghatge, Mayur; Tabrizian, Roozbeh

    2018-03-01

    A matrix of aluminum-nitride (AlN) waveguides is acoustically engineered to realize electrically isolated phase-synchronous frequency references through nonlinear wave-mixing. AlN rectangular waveguides are cross-coupled through a periodically perforated plate that is engineered to have a wide acoustic bandgap around a desirable frequency ( f1≈509 MHz). While the coupling plate isolates the matrix from resonant vibrations of individual waveguide constituents at f1, it is transparent to the third-order harmonic waves (3f1) that are generated through nonlinear wave-mixing. Therefore, large-signal excitation of the f1 mode in a constituent waveguide generates acoustic waves at 3f1 with an efficiency defined by elastic anharmonicity of the AlN film. The phase-synchronous propagation of the third harmonic through the matrix is amplified by a high quality-factor resonance mode at f2≈1529 MHz, which is sufficiently close to 3f1 (f2 ≅ 3f1). Such an architecture enables realization of frequency-multiplied and phase-synchronous, yet electrically and spectrally isolated, references for multi-band/carrier and spread-spectrum wireless communication systems.

  2. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    Farrell, R.; Pagan, V.R.; Kabulski, A.; Kuchibhatla, S.; Harman, J.; Kasarla, K.R.; Rodak, L.E.; Hensel, J.P.; Famouri, P.; Korakakis, D.

    2008-01-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE-grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  3. High Temperature Annealing Studies on the Piezoelectric Properties of Thin Aluminum Nitride Films

    Energy Technology Data Exchange (ETDEWEB)

    R. Farrell; V. R. Pagan; A. Kabulski; Sridhar Kuchibhatl; J. Harman; K. R. Kasarla; L. E. Rodak; P. Famouri; J. Peter Hensel; D. Korakakis

    2008-05-01

    A Rapid Thermal Annealing (RTA) system was used to anneal sputtered and MOVPE grown Aluminum Nitride (AlN) thin films at temperatures up to 1000°C in ambient and controlled environments. According to Energy Dispersive X-Ray Analysis (EDAX), the films annealed in an ambient environment rapidly oxidize after five minutes at 1000°C. Below 1000°C the films oxidized linearly as a function of annealing temperature which is consistent with what has been reported in literature [1]. Laser Doppler Vibrometry (LDV) was used to measure the piezoelectric coefficient, d33, of these films. Films annealed in an ambient environment had a weak piezoelectric response indicating that oxidation on the surface of the film reduces the value of d33. A high temperature furnace has been built that is capable of taking in-situ measurements of the piezoelectric response of AlN films. In-situ d33 measurements are recorded up to 300°C for both sputtered and MOVPE-grown AlN thin films. The measured piezoelectric response appears to increase with temperature up to 300°C possibly due to stress in the film.

  4. A novel anti-frictional multiphase layer produced by plasma nitriding of PVD titanium coated ZL205A aluminum alloy

    Science.gov (United States)

    Lu, C.; Yao, J. W.; Wang, Y. X.; Zhu, Y. D.; Guo, J. H.; Wang, Y.; Fu, H. Y.; Chen, Z. B.; Yan, M. F.

    2018-02-01

    The heat treatment (consisting of solid solution and aging), is integrated with the nitriding process of titanium coated ZL205A aluminum alloy to improve the surface and matrix mechanical properties simultaneously. Two-step duplex treatment is adopted to prepare the gradient multiphase layer on a magnesium-free ZL205A aluminum-copper based alloy. Firstly, pure titanium film is deposited on the aluminum alloy substrate using magnetron sputtering. Secondly, the Ti-coated specimen is nitrided at the solid solution temperature of the substrate alloying elements in a gas mixture of N2 and H2 and aged at 175 °C. The microstructure evolution, microhardness as well as the wear resistance of obtained multiphase layers are investigated by means of scanning electron microscopy (SEM) equipped with energy dispersive X-ray spectrometer (EDS), microhardness tester and pin-on-disc tribometer. The multiphase layer, dominated by TiN0.3 or Al3Ti, is prepared with significantly increased layer depth after duplex treatment. The surface hardness of multiphase layer is remarkably improved from 23.7HV to 457HV. The core matrix hardness is also increased to 65HV after aging. The wear rate of the multiphase layer decreases about 55.22% and 49.28% in comparison with the aged and Ti coated specimens, respectively. The predominant wear mechanism for the multiphase layer is abrasive and oxidation, but severe adhesive wear for the aged and Ti coated specimens.

  5. Scanning proximal microscopy study of the thin layers of silicon carbide-aluminum nitride solid solution manufactured by fast sublimation epitaxy

    Directory of Open Access Journals (Sweden)

    Tománek P.

    2013-05-01

    Full Text Available The objective of the study is a growth of SiC/(SiC1−x(AlNx structures by fast sublimation epitaxy of the polycrystalline source of (SiC1−x(AlNx and their characterisation by proximal scanning electron microscopy and atomic force microscopy. For that purpose optimal conditions of sublimation process have been defined. Manufactured structures could be used as substrates for wide-band-gap semiconductor devices on the basis of nitrides, including gallium nitride, aluminum nitride and their alloys, as well as for the production of transistors with high mobility of electrons and also for creation of blue and ultraviolet light emitters (light-emitted diodes and laser diodes. The result of analysis shows that increasing of the growth temperature up to 2300 K allows carry out sublimation epitaxy of thin layers of aluminum nitride and its solid solution.

  6. The thermal power of aluminum nitride at temperatures between 1350 and 1650 deg C in argon and nitrogen atmospheres. Ph.D. Thesis - Rhine-Westphalia High School at Aachen

    Science.gov (United States)

    Fischer, W. A.; Schuh, B.

    1978-01-01

    The test apparatus for measuring the thermal voltage of aluminum nitride for temperature differences of up to + or - 60 C between 1350 and 1650 C is described. The thermal power and its homogeneous proportion are determined and the heat transfer of the migration ions resulting from the homogeneous thermal power is calculated. The conduction mechanism in aluminum nitride is discussed.

  7. Spark Plasma Sintering As a Solid-State Recycling Technique: The Case of Aluminum Alloy Scrap Consolidation.

    Science.gov (United States)

    Paraskevas, Dimos; Vanmeensel, Kim; Vleugels, Jef; Dewulf, Wim; Deng, Yelin; Duflou, Joost R

    2014-08-06

    Recently, "meltless" recycling techniques have been presented for the light metals category, targeting both energy and material savings by bypassing the final recycling step of remelting. In this context, the use of spark plasma sintering (SPS) is proposed in this paper as a novel solid-state recycling technique. The objective is two-fold: (I) to prove the technical feasibility of this approach; and (II) to characterize the recycled samples. Aluminum (Al) alloy scrap was selected to demonstrate the SPS effectiveness in producing fully-dense samples. For this purpose, Al alloy scrap in the form of machining chips was cold pre-compacted and sintered bellow the solidus temperature at 490 °C, under elevated pressure of 200 MPa. The dynamic scrap compaction, combined with electric current-based joule heating, achieved partial fracture of the stable surface oxides, desorption of the entrapped gases and activated the metallic surfaces, resulting in efficient solid-state chip welding eliminating residual porosity. The microhardness, the texture, the mechanical properties, the microstructure and the density of the recycled specimens have been investigated. An X-ray computed tomography (CT) analysis confirmed the density measurements, revealing a void-less bulk material with homogeneously distributed intermetallic compounds and oxides. The oxide content of the chips incorporated within the recycled material slightly increases its elastic properties. Finally, a thermal distribution simulation of the process in different segments illustrates the improved energy efficiency of this approach.

  8. Spark Plasma Sintering As a Solid-State Recycling Technique: The Case of Aluminum Alloy Scrap Consolidation

    Directory of Open Access Journals (Sweden)

    Dimos Paraskevas

    2014-08-01

    Full Text Available Recently, “meltless” recycling techniques have been presented for the light metals category, targeting both energy and material savings by bypassing the final recycling step of remelting. In this context, the use of spark plasma sintering (SPS is proposed in this paper as a novel solid-state recycling technique. The objective is two-fold: (I to prove the technical feasibility of this approach; and (II to characterize the recycled samples. Aluminum (Al alloy scrap was selected to demonstrate the SPS effectiveness in producing fully-dense samples. For this purpose, Al alloy scrap in the form of machining chips was cold pre-compacted and sintered bellow the solidus temperature at 490 °C, under elevated pressure of 200 MPa. The dynamic scrap compaction, combined with electric current-based joule heating, achieved partial fracture of the stable surface oxides, desorption of the entrapped gases and activated the metallic surfaces, resulting in efficient solid-state chip welding eliminating residual porosity. The microhardness, the texture, the mechanical properties, the microstructure and the density of the recycled specimens have been investigated. An X-ray computed tomography (CT analysis confirmed the density measurements, revealing a void-less bulk material with homogeneously distributed intermetallic compounds and oxides. The oxide content of the chips incorporated within the recycled material slightly increases its elastic properties. Finally, a thermal distribution simulation of the process in different segments illustrates the improved energy efficiency of this approach.

  9. Development of an aluminum nitride-silicon carbide material set for high-temperature sensor applications

    Science.gov (United States)

    Griffin, Benjamin A.; Habermehl, Scott D.; Clews, Peggy J.

    2014-06-01

    A number of important energy and defense-related applications would benefit from sensors capable of withstanding extreme temperatures (>300°C). Examples include sensors for automobile engines, gas turbines, nuclear and coal power plants, and petroleum and geothermal well drilling. Military applications, such as hypersonic flight research, would also benefit from sensors capable of 1000°C. Silicon carbide (SiC) has long been recognized as a promising material for harsh environment sensors and electronics because it has the highest mechanical strength of semiconductors with the exception of diamond and its upper temperature limit exceeds 2500°C, where it sublimates rather than melts. Yet today, many advanced SiC MEMS are limited to lower temperatures because they are made from SiC films deposited on silicon wafers. Other limitations arise from sensor transduction by measuring changes in capacitance or resistance, which require biasing or modulation schemes that can with- stand elevated temperatures. We are circumventing these issues by developing sensing structures directly on SiC wafers using SiC and piezoelectric aluminum nitride (AlN) thin films. SiC and AlN are a promising material combination due to their high thermal, electrical, and mechanical strength and closely matched coefficients of thermal expansion. AlN is also a non-ferroelectric piezoelectric material, enabling piezoelectric transduction at temperatures exceeding 1000°C. In this paper, the challenges of incorporating these two materials into a compatible MEMS fabrication process are presented. The current progress and initial measurements of the fabrication process are shown. The future direction and the need for further investigation of the material set are addressed.

  10. Observation of band gaps in the gigahertz range and deaf bands in a hypersonic aluminum nitride phononic crystal slab

    Science.gov (United States)

    Gorisse, M.; Benchabane, S.; Teissier, G.; Billard, C.; Reinhardt, A.; Laude, V.; Defaÿ, E.; Aïd, M.

    2011-06-01

    We report on the observation of elastic waves propagating in a two-dimensional phononic crystal composed of air holes drilled in an aluminum nitride membrane. The theoretical band structure indicates the existence of an acoustic band gap centered around 800 MHz with a relative bandwidth of 6.5% that is confirmed by gigahertz optical images of the surface displacement. Further electrical measurements and computation of the transmission reveal a much wider attenuation band that is explained by the deaf character of certain bands resulting from the orthogonality of their polarization with that of the source.

  11. Electrostatic Self-Assembly of Diamond Nanoparticles onto Al- and N-Polar Sputtered Aluminum Nitride Surfaces.

    Science.gov (United States)

    Yoshikawa, Taro; Reusch, Markus; Zuerbig, Verena; Cimalla, Volker; Lee, Kee-Han; Kurzyp, Magdalena; Arnault, Jean-Charles; Nebel, Christoph E; Ambacher, Oliver; Lebedev, Vadim

    2016-11-17

    Electrostatic self-assembly of diamond nanoparticles (DNPs) onto substrate surfaces (so-called nanodiamond seeding) is a notable technique, enabling chemical vapor deposition (CVD) of nanocrystalline diamond thin films on non-diamond substrates. In this study, we examine this technique onto differently polarized (either Al- or N-polar) c -axis oriented sputtered aluminum nitride (AlN) film surfaces. This investigation shows that Al-polar films, as compared to N-polar ones, obtain DNPs with higher density and more homogeneously on their surfaces. The origin of these differences in density and homogeneity is discussed based on the hydrolysis behavior of AlN surfaces in aqueous suspensions.

  12. High Q micro-ring resonators fabricated from polycrystalline aluminum nitride films for near infrared and visible photonics.

    Science.gov (United States)

    Pernice, Wolfram H P; Xiong, Chi; Tang, Hong X

    2012-05-21

    We demonstrate wideband integrated photonic circuits in sputter-deposited aluminum nitride (AlN) thin films. At both near-infrared and visible wavelengths, we achieve low propagation loss in integrated waveguides and realize high-quality optical resonators. In the telecoms C-band (1520-1580 nm), we obtain the highest optical Q factor of 440,000. Critical coupled devices show extinction ratio above 30 dB. For visible wavelengths (around 770 nm), intrinsic quality factors in excess of 30,000 is demonstrated. Our work illustrates the potential of AlN as a low loss material for wideband optical applications.

  13. Numerical study of self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride substrate

    International Nuclear Information System (INIS)

    Ding Yanfang; Zhu Ziqiang; Zhu Ming; Lin Chenglu

    2006-01-01

    Compared with bulk-silicon technology, silicon-on-insulator (SOI) technology possesses many advantages but it is inevitable that the buried silicon dioxide layer also thermally insulates the metal-oxide-silicon field-effect transistors (MOSFETs) from the bulk due to the low thermal conductivity. One of the alternative insulator to replace the buried oxide layer is aluminum nitride (MN), which has a thermal conductivity that is about 200 times higher than that of SiO 2 (320 W·m -1 ·K -1 versus 1.4 W·m -1 ·K -l ). To investigate the self-heating effects of small-size MOSFETs fabricated on silicon-on-aluminum nitride (SOAN) substrate, a two-dimensional numerical analysis is performed by using a device simulator called MEDICI run on a Solaris workstation to simulate the electrical characteristics and temperature distribution by comparing with those of bulk and standard SOI MOSFETs. Our study suggests that AIN is a suitable alternative to silicon dioxide as a buried dielectric in SOI and expands the applications of SOI to high temperature conditions. (authors)

  14. Interlayer interaction and mechanical properties in multi-layer graphene, Boron-Nitride, Aluminum-Nitride and Gallium-Nitride graphene-like structure: A quantum-mechanical DFT study

    Science.gov (United States)

    Ghorbanzadeh Ahangari, Morteza; Fereidoon, A.; Hamed Mashhadzadeh, Amin

    2017-12-01

    In present study, we investigated mechanical, electronic and interlayer properties of mono, bi and 3layer of Boron-Nitride (B-N), Aluminum-Nitride (Al-N) and Gallium-Nitride (Ga-N) graphene sheets and compared these results with results obtained from carbonic graphenes (C-graphenes). For reaching this purpose, first we optimized the geometrical parameters of these graphenes by using density functional theory (DFT) method. Then we calculated Young's modulus of graphene sheet by compressing and then elongating these sheets in small increment. Our results indicates that Young's modulus of graphenes didn't changed obviously by increasing the number of layer sheet. We also found that carbonic graphene has greatest Young's modulus among another mentioned sheets because of smallest equilibrium distance between its elements. Next we modeled the van der Waals interfacial interaction exist between two sheets with classical spring model by using general form of Lennard-Jones (L-J) potential for all of mentioned graphenes. For calculating L-J parameters (ε and σ), the potential energy between layers of mentioned graphene as a function of the separation distance was plotted. Moreover, the density of states (DOS) are calculated to understand the electronic properties of these systems better.

  15. Preparation of uranium nitride

    International Nuclear Information System (INIS)

    Potter, R.A.; Tennery, V.J.

    1976-01-01

    A process is described for preparing actinide-nitrides from massive actinide metal which is suitable for sintering into low density fuel shapes by partially hydriding the massive metal and simultaneously dehydriding and nitriding the dehydrided portion. The process is repeated until all of the massive metal is converted to a nitride

  16. The Compressive Failure of Aluminum Nitride Considered as a Model Advanced Ceramic

    Science.gov (United States)

    2012-06-01

    Orphal et al., 1996) both as a standalone material and as part of ceramic composites (particularly with SiC). Much of the literature on bulk...is a liquid phase, pressureless sintered AlN, provided by the Dow Chemical Company, with 2% volume fraction of yttria (Y2O3) used as a sintering...cross-head displacement was measured using an LVDT, while the load measurement was obtained from the system load cell. A high resolution Grasshopper

  17. Synthesis, structural analysis and in situ transmission electron microscopy mechanical tests on individual aluminum matrix/boron nitride nanotube nanohybrids

    International Nuclear Information System (INIS)

    Yamaguchi, Maho; Tang, Dai-Ming; Zhi Chunyi; Bando, Yoshio; Shtansky, Dmitry; Golberg, Dmitri

    2012-01-01

    Boron nitride nanotube (BNNT)/aluminum matrix composite nanohybrids were fabricated through magnetron sputtering of Al onto dispersed multiwalled BNNTs with average external diameters of 40–50 nm. Aluminum phase coating tightly wrapped the BNNTs after the deposition. The coating thickness in the range of 5–200 nm was controlled by changing sputtering time. Using imaging techniques and electron diffraction analysis in a transmission electron microscope, the Al phase was found to create nanocrystalline shields around individual BNNTs. The chemical states of the hybrid nanomaterials during the initial stages of sputtering were analyzed by X-ray photoelectron spectroscopy. Direct in situ bending and tensile tests on individual BNNT–Al nanocomposites were carried out by using a dedicated transmission electron microscope-atomic force microscope holder. In parallel, high-resolution TEM images and video recordings were taken for the analysis of deformation kinetics and fracture mechanisms. The nanohybrids with a suitably thick aluminum coating (∼40 nm) withstood at least nine times higher stresses compared to a pure non-armed Al metal. This pioneering work opens up a prospective pathway for making ultralight and superstrong “dream” structural materials for future automotive and aerospace applications.

  18. Studies on Preparation and Characterization of Aluminum Nitride-Coated Carbon Fibers and Thermal Conductivity of Epoxy Matrix Composites

    Directory of Open Access Journals (Sweden)

    Hyeon-Hye Kim

    2017-08-01

    Full Text Available In this work; the effects of an aluminum nitride (AlN ceramic coating on the thermal conductivity of carbon fiber-reinforced composites were studied. AlN were synthesized by a wet-thermal treatment (WTT method in the presence of copper catalysts. The WTT method was carried out in a horizontal tube furnace at above 1500 °C under an ammonia (NH3 gas atmosphere balanced by a nitrogen using aluminum chloride as a precursor. Copper catalysts pre-doped enhance the interfacial bonding of the AlN with the carbon fiber surfaces. They also help to introduce AlN bonds by interrupting aluminum oxide (Al2O3 formation in combination with oxygen. Scanning electron microscopy (SEM; Transmission electron microscopy (TEM; and X-ray diffraction (XRD were used to analyze the carbon fiber surfaces and structures at each step (copper-coating step and AlN formation step. In conclusion; we have demonstrated a synthesis route for preparing an AlN coating on the carbon fiber surfaces in the presence of a metallic catalyst.

  19. Simultaneous direct determination of aluminum, calcium and iron in silicon carbide and silicon nitride powders by slurry-sampling graphite furnace AAS.

    Science.gov (United States)

    Minami, Hirotsugu; Yada, Masako; Yoshida, Tomomi; Zhang, Qiangbin; Inoue, Sadanobu; Atsuya, Ikuo

    2004-03-01

    A fast and accurate analytical method was established for the simultaneous direct determination of aluminum, calcium and iron in silicon carbide and silicon nitride powders by graphite furnace atomic absorption spectrometry using a slurry sampling technique and a Hitachi Model Z-9000 atomic absorption spectrometer. The slurry samples were prepared by the ultrasonication of silicon carbide or silicon nitride powders with 0.1 M nitric acid. Calibration curves were prepared by using a mixed standard solution containing aluminum, calcium, iron and 0.1 M nitric acid. The analytical results of the proposed method for aluminum, calcium and iron in silicon carbide and silicon nitride reference materials were in good agreement with the reference values. The detection limits for aluminum, calcium and iron were 0.6 microg/g, 0.15 microg/g and 2.5 microg/g, respectively, in solid samples, when 200 mg of powdered samples were suspended in 20 ml of 0.1 M nitric acid and a 10 microl portion of the slurry sample was then measured. The relative standard deviation of the determination of aluminum, calcium and iron was 5 - 33%.

  20. Performance of Chevron-notch short bar specimen in determining the fracture toughness of silicon nitride and aluminum oxide

    Science.gov (United States)

    Munz, D.; Bubsey, R. T.; Shannon, J. L., Jr.

    1980-01-01

    Ease of preparation and testing are advantages unique to the chevron-notch specimen used for the determination of the plane strain fracture toughness of extremely brittle materials. During testing, a crack develops at the notch tip and extends stably as the load is increased. For a given specimen and notch configuration, maximum load always occurs at the same relative crack length independent of the material. Fracture toughness is determined from the maximum load with no need for crack length measurement. Chevron notch acuity is relatively unimportant since a crack is produced during specimen loading. In this paper, the authors use their previously determined stress intensity factor relationship for the chevron-notch short bar specimen to examine the performance of that specimen in determining the plane strain fracture toughness of silicon nitride and aluminum oxide.

  1. Electrostatic Self-Assembly of Diamond Nanoparticles onto Al- and N-Polar Sputtered Aluminum Nitride Surfaces

    Directory of Open Access Journals (Sweden)

    Taro Yoshikawa

    2016-11-01

    Full Text Available Electrostatic self-assembly of diamond nanoparticles (DNPs onto substrate surfaces (so-called nanodiamond seeding is a notable technique, enabling chemical vapor deposition (CVD of nanocrystalline diamond thin films on non-diamond substrates. In this study, we examine this technique onto differently polarized (either Al- or N-polar c-axis oriented sputtered aluminum nitride (AlN film surfaces. This investigation shows that Al-polar films, as compared to N-polar ones, obtain DNPs with higher density and more homogeneously on their surfaces. The origin of these differences in density and homogeneity is discussed based on the hydrolysis behavior of AlN surfaces in aqueous suspensions.

  2. Enhancement of the c-axis texture of aluminum nitride by an inductively coupled plasma reactive sputtering process

    International Nuclear Information System (INIS)

    Yeh, C.-M.; Chen, C.H.; Gan, J.-Y.; Kou, C.S.; Hwang, J.

    2005-01-01

    Inductively coupled plasma reactive sputtering technique has been applied to grow highly oriented aluminum nitride on Si(111) at high process pressure. An inductive coil of 3 and 1/4 turns was introduced to generate a plasma zone near the substrate holder, which provides additional energy to the radicals inside the plasma zone. The full width at half-maximum of the X-ray rocking curve of AlN(0002) is reduced from 7.90 deg. to 4.05 deg. when the inductive coil power is raised from 0 to 180 W. The enhancement of the c-axis texture of AlN is attributed to the increase of the density of the sputtered Al atoms of high energy

  3. 229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

    Science.gov (United States)

    Liu, Dong; Cho, Sang June; Park, Jeongpil; Seo, Jung-Hun; Dalmau, Rafael; Zhao, Deyin; Kim, Kwangeun; Gong, Jiarui; Kim, Munho; Lee, In-Kyu; Albrecht, John D.; Zhou, Weidong; Moody, Baxter; Ma, Zhenqiang

    2018-02-01

    AlGaN based 229 nm light emitting diodes (LEDs), employing p-type Si to significantly increase hole injection, were fabricated on single crystal bulk aluminum nitride (AlN) substrates. Nitride heterostructures were epitaxially deposited by organometallic vapor phase epitaxy and inherit the low dislocation density of the native substrate. Following epitaxy, a p-Si layer is bonded to the heterostructure. LEDs were characterized both electrically and optically. Owing to the low defect density films, large concentration of holes from p-Si, and efficient hole injection, no efficiency droop was observed up to a current density of 76 A/cm2 under continuous wave operation and without external thermal management. An optical output power of 160 μW was obtained with the corresponding external quantum efficiency of 0.03%. This study demonstrates that by adopting p-type Si nanomembrane contacts as a hole injector, practical levels of hole injection can be realized in UV light-emitting diodes with very high Al composition AlGaN quantum wells, enabling emission wavelengths and power levels that were previously inaccessible using traditional p-i-n structures with poor hole injection efficiency.

  4. Formation of stacking faults and the screw dislocation-driven growth: a case study of aluminum nitride nanowires.

    Science.gov (United States)

    Meng, Fei; Estruga, Marc; Forticaux, Audrey; Morin, Stephen A; Wu, Qiang; Hu, Zheng; Jin, Song

    2013-12-23

    Stacking faults are an important class of crystal defects commonly observed in nanostructures of close packed crystal structures. They can bridge the transition between hexagonal wurtzite (WZ) and cubic zinc blende (ZB) phases, with the most known example represented by the "nanowire (NW) twinning superlattice". Understanding the formation mechanisms of stacking faults is crucial to better control them and thus enhance the capability of tailoring physical properties of nanomaterials through defect engineering. Here we provide a different perspective to the formation of stacking faults associated with the screw dislocation-driven growth mechanism of nanomaterials. With the use of NWs of WZ aluminum nitride (AlN) grown by a high-temperature nitridation method as the model system, dislocation-driven growth was first confirmed by transmission electron microscopy (TEM). Meanwhile numerous stacking faults and associated partial dislocations were also observed and identified to be the Type I stacking faults and the Frank partial dislocations, respectively, using high-resolution TEM. In contrast, AlN NWs obtained by rapid quenching after growth displayed no stacking faults or partial dislocations; instead many of them had voids that were associated with the dislocation-driven growth. On the basis of these observations, we suggest a formation mechanism of stacking faults that originate from dislocation voids during the cooling process in the syntheses. Similar stacking fault features were also observed in other NWs with WZ structure, such as cadmium sulfide (CdS) and zinc oxide (ZnO).

  5. Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy.

    Science.gov (United States)

    Wu, PeiTsen; Funato, Mitsuru; Kawakami, Yoichi

    2015-11-30

    Aluminum nitride (AlN) has attracted increasing interest as an optoelectronic material in the deep ultraviolet spectral range due to its wide bandgap of 6.0 eV (207 nm wavelength) at room temperature. Because AlN bulk single crystals are ideal device substrates for such applications, the crystal growth of bulky AlN has been extensively studied. Two growth methods seem especially promising: hydride vapor phase epitaxy (HVPE) and sublimation. However, the former requires hazardous gases such as hydrochloric acid and ammonia, while the latter needs extremely high growth temperatures around 2000 °C. Herein we propose a novel vapor-phase-epitaxy-based growth method for AlN that does not use toxic materials; the source precursors are elementary aluminum and nitrogen gas. To prepare our AlN, we constructed a new growth apparatus, which realizes growth of AlN single crystals at a rate of ~18 μm/h at 1550 °C using argon as the source transfer via the simple reaction Al + 1/2N2 → AlN. This growth rate is comparable to that by HVPE, and the growth temperature is much lower than that in sublimation. Thus, this study opens up a novel route to achieve environmentally friendly growth of AlN.

  6. Environmentally friendly method to grow wide-bandgap semiconductor aluminum nitride crystals: Elementary source vapor phase epitaxy

    Science.gov (United States)

    Wu, Peitsen; Funato, Mitsuru; Kawakami, Yoichi

    2015-11-01

    Aluminum nitride (AlN) has attracted increasing interest as an optoelectronic material in the deep ultraviolet spectral range due to its wide bandgap of 6.0 eV (207 nm wavelength) at room temperature. Because AlN bulk single crystals are ideal device substrates for such applications, the crystal growth of bulky AlN has been extensively studied. Two growth methods seem especially promising: hydride vapor phase epitaxy (HVPE) and sublimation. However, the former requires hazardous gases such as hydrochloric acid and ammonia, while the latter needs extremely high growth temperatures around 2000 °C. Herein we propose a novel vapor-phase-epitaxy-based growth method for AlN that does not use toxic materials; the source precursors are elementary aluminum and nitrogen gas. To prepare our AlN, we constructed a new growth apparatus, which realizes growth of AlN single crystals at a rate of ~18 μm/h at 1550 °C using argon as the source transfer via the simple reaction Al + 1/2N2 → AlN. This growth rate is comparable to that by HVPE, and the growth temperature is much lower than that in sublimation. Thus, this study opens up a novel route to achieve environmentally friendly growth of AlN.

  7. The Mechanical and Tribology Properties of Sputtered Titanium Aluminum Nitride Coating on the Tungsten Carbide Insert Tool in the Dry Turning of Tool Steel

    Directory of Open Access Journals (Sweden)

    Esmar Budi

    2015-02-01

    Full Text Available The effect of the sputtering parameters on the mechanical tribology properties of Titanium Aluminum Nitride coating on the tungsten cabide insert tool in the dry turning of tool steel has been investigated. The coating was deposited using a Direct Current magnetron sputtering system with various substrate biases (-79 to -221 V and nitrogen flow rates (30 to 72 sccm. The dry turning test was carried out on a Computer Numeric Code machine using an optimum cutting parameter setting. The results show that the lowest flank wear (~0.4 mm was achieved using a Titanium Aluminum Nitride-coated tool that was deposited at a high substrate bias (-200 V and a high nitrogen flow rate (70 sccm. The lowest flank wear was attributed to high coating hardness.

  8. Effects of Nano-Aluminum Nitride on the Performance of an Ultrahigh-Temperature Inorganic Phosphate Adhesive Cured at Room Temperature

    OpenAIRE

    Ma, Chengkun; Chen, Hailong; Wang, Chao; Zhang, Jifeng; Qi, Hui; Zhou, Limin

    2017-01-01

    Based on the optimal proportion of resin and curing agent, an ultrahigh-temperature inorganic phosphate adhesive was prepared with aluminum dihydric phosphate, aluminium oxide ( α -Al2O3), etc. and cured at room temperature (RT). Then, nano-aluminum nitride (nano-AlN), nano-Cupric oxide (nano-CuO), and nano-titanium oxide (nano-TiO2) were added into the adhesive. Differential scanning calorimetry was conducted using the inorganic phosphate adhesive to analyze the phosphate reactions durin...

  9. Pulse electric current sintering of cubic boron nitride/tungsten carbide–cobalt (cBN/WC–Co) composites: Effect of cBN particle size and volume fraction on their microstructure and properties

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Bo, E-mail: xiaoboking@gmail.com [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xianning West Road No. 28, Xi' an 710049, Shaanxi Province (China); State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace Engineering, Xi' an Jiaotong University, Xianning West Road No. 28, Xi' an 710049, Shaanxi Province (China); Qin, Yi [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xianning West Road No. 28, Xi' an 710049, Shaanxi Province (China); Jin, Feng [State Key Laboratory for Strength and Vibration of Mechanical Structures, School of Aerospace Engineering, Xi' an Jiaotong University, Xianning West Road No. 28, Xi' an 710049, Shaanxi Province (China); Yang, Jian-Feng, E-mail: yang155@mail.xjtu.edu.cn [State Key Laboratory for Mechanical Behavior of Materials, Xi' an Jiaotong University, Xianning West Road No. 28, Xi' an 710049, Shaanxi Province (China); Ishizaki, Kozo [Department of Mechanical Engineering, Nagaoka University of Technology, Nagaoka 940-2188 (Japan)

    2014-06-01

    Cubic boron nitride/tungsten carbide–cobalt (cBN/WC–Co) composites were fabricated by pulse electric current sintering (PECS), using Ni–P as sintering additives to promote low temperature densification. The effect of cBN particle size and volume fraction on the densification, microstructure and mechanical properties of WC–Co composites was investigated. There was no phase transformation from cBN to hBN (hexagonal BN) with low-hardness due to low sintering temperature (1100–1200 °C) and short sintering time. Smaller cBN particle led to lower sinter-ability of the composites due to its high specific surface area. The 30 vol% 10–14 µm cBN/WC–Co composite (P14V30) exhibited high hardness (18.3 GPa, 1200 °C) and high fracture toughness (15.6 MP·m{sup 1/2}, 1000 °C). The high hardness resulted from the homogeneously dispersed cBN particles, which had a good bonding with the WC matrix. Increased fracture toughness was mainly attributed to crack deflection or bridging and pullout of cBN grains.

  10. A chemical and fluid dynamic study of the chemical vapor deposition of aluminum nitride in a vertical reactor

    Science.gov (United States)

    Bather, Wayne Anthony

    The metalorganic chemical vapor deposition (MOCVD) growth of compound semiconductors has become important in producing many high performance electronic and optoelectronic devices from the wide bandgaps III-V nitrides, for example, aluminum nitride (AlN). A systematic theoretical and experimental investigation of the chemistry and mass transport process in a MOCVD system can yield predictive models of the deposition process. The chemistries and fluid dynamics of the MOCVD growth of AlN in a vertical reactor is analyzed and characterized in order to parameterize and model the deposition process. A Fourier Transform Infrared (FTIR) spectroscopic study of the predeposition reactions between trimethylaluminum (TMAl) and ammonia (NHsb3) is carried out in a static gas cell to examine the primary homogeneous gas phase reactions, pyrolysis of the reactants, and adduct formation, possibly accompanied by elimination reactions. A series of reactions, based on laboratory studies and literature review, is then proposed to model the deposition process. All pertinent kinetic, thermochemical, and transport properties were obtained. Utilizing a mass transport model, we performed computational fluid dynamics calculations using the FLUENT software package. We determined temperature, velocity, and concentration profiles, along with deposition rates inside the experimental vertical CVD reactor in the Howard University Material Science Research Center of Excellence. Experimental deposition rate data were found to be in good agreement with those predicted from the simulations, thus validating the proposed model. The control of the homogeneous gas phase reaction leading to the formation and subsequent decomposition of the adduct is critical to the formation of device-grade AlN films. Many basic processes occurring during MOCVD of AlN are still not completely understood, and none of the detailed surface reaction mechanisms are known.

  11. Utilization of multiwalled boron nitride nanotubes for the reinforcement of lightweight aluminum ribbons.

    Science.gov (United States)

    Yamaguchi, Maho; Pakdel, Amir; Zhi, Chunyi; Bando, Yoshio; Tang, Dai-Ming; Faerstein, Konstantin; Shtansky, Dmitry; Golberg, Dmitri

    2013-01-02

    Multiwalled boron nitride nanotubes (BNNTs) have very attractive mechanical and thermal properties, e.g., elasticity, tensile strength, and high resistance to oxidation, and may be considered as ideal reinforcing agents in lightweight metal matrix composites. Herein, for the first time, Al-BNNT ribbons with various BNNT contents (up to 3 wt.%) were fabricated via melt spinning in an argon atmosphere. BNNTs were randomly dispersed within a microcrystalline Al matrix under ribbon casting and led to more than doubling of room-temperature ultimate tensile strength of the composites compared to pure Al ribbons produced at the similar conditions.

  12. Plasma-assisted atomic layer epitaxial growth of aluminum nitride studied with real time grazing angle small angle x-ray scattering

    Energy Technology Data Exchange (ETDEWEB)

    Anderson, Virginia R.; Nepal, Neeraj; Johnson, Scooter D.; Robinson, Zachary R.; Nath, Anindya; Kozen, Alexander C.; Qadri, Syed B.; DeMasi, Alexander; Hite, Jennifer K.; Ludwig, Karl F.; Eddy, Charles R.

    2017-05-01

    Wide bandgap semiconducting nitrides have found wide-spread application as light emitting and laser diodes and are under investigation for further application in optoelectronics, photovoltaics, and efficient power switching technologies. Alloys of the binary semiconductors allow adjustments of the band gap, an important semiconductor material characteristic, which is 6.2 eV for aluminum nitride (AlN), 3.4 eV for gallium nitride, and 0.7 eV for (InN). Currently, the highest quality III-nitride films are deposited by metalorganic chemical vapor deposition and molecular beam epitaxy. Temperatures of 900 °C and higher are required to deposit high quality AlN. Research into depositing III-nitrides with atomic layer epitaxy (ALEp) is ongoing because it is a fabrication friendly technique allowing lower growth temperatures. Because it is a relatively new technique, there is insufficient understanding of the ALEp growth mechanism which will be essential to development of the process. Here, grazing incidence small angle x-ray scattering is employed to observe the evolving behavior of the surface morphology during growth of AlN by ALEp at temperatures from 360 to 480 °C. Increased temperatures of AlN resulted in lower impurities and relatively fewer features with short range correlations.

  13. Synthesis and characterization of molybdenum/phenolic resin composites binding with aluminum nitride particles for diamond cutters

    Science.gov (United States)

    Lin, Chun-Te; Lee, Hsun-Tsing; Chen, Jem-Kun

    2013-11-01

    Novolac-type bisphenol-F based molybdenum-phenolic resins/silane-modified aluminum nitride (Mo-BPF/m-AlN) composites were successfully prepared. In the preparation process, molybdate reacted with bisphenol-F based phenolic resins (BPF) to form a low cross-linked Mo-BPF with new Mosbnd O bonds which were confirmed by the FTIR and XPS spectra. Simultaneously, a special silane-modified aluminum nitride (m-AlN) was prepared with 3-aminopropyltriethoxysilane (APTES) modifier. Then, this m-AlN was fully mixed with Mo-BPF to form Mo-BPF/m-AlN which can be further cured with hexamethylenetetramine at 200 °C. The structure and characterization of BPF, Mo-BPF and Mo-BPF/m-AlN were determined by using FTIR, DSC, DMA, TGA, SEM, mechanical properties and contact angle measurements. SEM photographs show that m-AlN particles are uniformly distributed in the Mo-BPF/m-AlN composites. Also there are no gaps or void between m-AlN and Mo-BPF phases, which implies a strong physical bonding between the two phases. The glass transition temperature, thermal resistance, flexural strength, and hardness of Mo-BPF are respectively higher than those of BPF. This is due to the presence of Mosbnd O cross-linking bonds in Mo-BPF. When the m-AlN was additionally incorporated into Mo-BPF, the well-dispersed and well-adhered m-AlN can further promote all the above-mentioned properties of the composites. Typically, the glass transition temperature, decomposition temperature at 5% weight loss and flexural strength of Mo-BPF/m-AlN are 245 °C, 428 °C and 82.7 MPa respectively, which are much higher than the corresponding values of 184 °C, 358 °C and 58.2 MPa for BPF. In addition, the hygroscopic nature of BPF can be inhibited by treating with molybdate or incorporating with m-AlN. This is due to that the m-AlN is hydrophobic and Mosbnd O groups in Mo-BPF are more hydrophobic than OH groups in BPF. Furthermore, Mo-BPF/m-AlN was compared with BPF in the performance as a binder for diamond cutting

  14. Application of computational modeling to the kinetics of precipitation of aluminum nitride in steels

    Directory of Open Access Journals (Sweden)

    e Silva Costa A.

    2012-01-01

    Full Text Available In previous works the possibilities and limitations of the application of calculations in the Al-Fe-N system to describe the precipitation of AlN in steel, both in the solid state and during the solidification were discussed and some difficulties related to the extension of these calculations to more complex steel systems, due to limitations in the thermodynamic data were also presented. Presently, the precipitation kinetics of AlN in ferrite (BCC and austenite (FCC is discussed. The correct description of the precipitation of AlN in both phases is relevant to: (a the precipitation at higher temperatures, in the austenite field, that occurs in some steels, (b the concurrent precipitation of this nitride with the annealing treatment, when the steel is mostly ferritic, used in the processing of some types of deep drawing steels (c the precipitation of this nitride in some silicon alloyed electric steels at relatively high temperatures, when these steels can have significant fractions of BCC and FCC in their microstructure. The precise knowledge of the precipitation-dissolution behavior of AlN in special in these two latter classes of steels is of great importance to their correct processing. In this work, a computational tool for simulating multiparticle precipitation kinetics of diffusion-controlled processes in multi-component and multi-phase alloy systems is employed in an attempt to describe these precipitation processes. The results are compared with experimental data on precipitation. The assumptions necessary for the application of the multi-particle modeling tool are discussed, agreements and discrepancies are identified and some possible reasons for these are indicated. Furthermore, the impact of the use of different sources of data on steel processing development is discussed and the need for further studies highlighted.

  15. Graphitic carbon nitride/phosphorus-rich aluminum phosphinates hybrids as smoke suppressants and flame retardants for polystyrene.

    Science.gov (United States)

    Shi, Yongqian; Yu, Bin; Duan, Lijin; Gui, Zhou; Wang, Bibo; Hu, Yuan; Yuen, Richard K K

    2017-06-15

    Graphitic carbon nitride/organic aluminum hypophosphites (g-C 3 N 4 /OAHPi) hybrids, i.e., CPDCPAHPi and CBPODAHPi, were synthesized by esterification and salification reactions, and then incorporated into polystyrene (PS) to prepare composites through a melt blending method. Structure and morphology characterizations demonstrated the successful synthesis of PDCPAHPi, BPODAHPi and their hybrids. The g-C 3 N 4 protected OAHPi from external heat and thus improved the thermal stability of OAHPi. Combining g-C 3 N 4 with OAHPi contributed to reduction in peak of heat release rate, total heat release and smoke production rate of PS matrix. Reduced smoke released has also been demonstrated by smoke density chamber testing. Additionally, introduction of the hybrids led to decreased release of flammable aromatic compounds. These properties improvement could be attributed to gas phase action and physical barrier effect in condensed phase: phosphorus-containing low-energy radicals generated from OAHPi effectively captured high-energy free-radicals evolved from PS; g-C 3 N 4 nanosheets retarded the permeation of heat and the escape of volatile degradation products. Therefore, g-C 3 N 4 /OAHPi hybrids will provide a potential strategy to reduce the fire hazards of PS. Copyright © 2017 Elsevier B.V. All rights reserved.

  16. Low-loss, silicon integrated, aluminum nitride photonic circuits and their use for electro-optic signal processing.

    Science.gov (United States)

    Xiong, Chi; Pernice, Wolfram H P; Tang, Hong X

    2012-07-11

    Photonic miniaturization requires seamless integration of linear and nonlinear optical components to achieve passive and active functions simultaneously. Among the available material systems, silicon photonics holds immense promise for optical signal processing and on-chip optical networks. However, silicon is limited to wavelengths above 1.1 μm and does not provide the desired lowest order optical nonlinearity for active signal processing. Here we report the integration of aluminum nitride (AlN) films on silicon substrates to bring active functionalities to chip-scale photonics. Using CMOS-compatible sputtered thin films we fabricate AlN-on-insulator waveguides that exhibit low propagation loss (0.6 dB/cm). Exploiting AlN's inherent Pockels effect we demonstrate electro-optic modulation up to 4.5 Gb/s with very low energy consumption (down to 10 fJ/bit). The ultrawide transparency window of AlN devices also enables high speed modulation at visible wavelengths. Our low cost, wideband, carrier-free photonic circuits hold promise for ultralow power and high-speed signal processing at the microprocessor chip level.

  17. High-temperature ionic and electronic resistivity of MgO- and Ta2O5- doped aluminum nitride

    Science.gov (United States)

    Yu, Dongsu; Lee, Eunsil; Lee, Sung-Min; Kim, Jong-Young; Park, Myung Ha

    2018-01-01

    In this work, using high-temperature impedance spectroscopy and microstructure analysis, we investigated the ionic and the electronic transport properties of aluminum nitride materials doped with MgO and Ta2O5 at temperatures up to 773 K. The electronic conductivity, due to the electron carrier, was greatly inhibited by addition of MgO, which might be due to the decreased electron carrier concentration via electronic compensation of MgO in the AlN matrix. The ionic conductivity due to grains of MgO-doped AlN increased by several orders of magnitude due to ionic defects generated by MgO substitution, whereas the ionic conductivity of the grain boundary of MgO-doped AlN decreased by one order of magnitude as a result of the formation of Mg'Al defects in the grain boundary, which elevated the Schottky barrier. The microstructural analysis showed that MgO addition promoted formation of an amorphous liquid phase including Mg, which is evidence of the selective precipitation of Mg in the grain boundary. Ta2O5-doped AlN also exhibited a decreased ionic conductivity of the grain boundary, which might have been due to the formation of an ionic pair of (ON ·-V‴Al) caused by the dissolution of Ta in the AlN matrix.

  18. Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer

    Directory of Open Access Journals (Sweden)

    Min-Hang Weng

    2014-01-01

    Full Text Available We investigated the capping layer effect of SiNx (silicon nitride on the microstructure, electrical, and optical properties of poly-Si (polycrystalline silicon prepared by aluminum induced crystallization (AIC. The primary multilayer structure comprised Al (30 nm/SiNx (20 nm/a-Si (amorphous silicon layer (100 nm/ITO coated glass and was then annealed in a low annealing temperature of 350°C with different annealing times, 15, 30, 45, and 60 min. The crystallization properties were analyzed and verified by X-ray diffraction (XRD and Raman spectra. The grain growth was analyzed via optical microscope (OM and scanning electron microscopy (SEM. The improved electrical properties such as Hall mobility, resistivity, and dark conductivity were investigated by using Hall and current-voltage (I-V measurements. The results show that the amorphous silicon film has been effectively induced even at a low temperature of 350°C and a short annealing time of 15 min and indicate that the SiNx capping layer can improve the grain growth and reduce the metal content in the induced poly-Si film. It is found that the large grain size is over 20 μm and the carrier mobility values are over 80 cm2/V-s.

  19. Potential acute effects of suspended aluminum nitride (AlN) nanoparticles on soluble microbial products (SMP) of activated sludge.

    Science.gov (United States)

    Zhou, Lijie; Zhuang, Weiqin; Wang, Xin; Yu, Ke; Yang, Shufang; Xia, Siqing

    2017-07-01

    The study aims to identify the potential acute effects of suspended aluminum nitride (AlN) nanoparticles (NPs) on soluble microbial products (SMP) of activated sludge. Cultured activated sludge loaded with 1, 10, 50, 100, 150 and 200mg/L of AlN NPs were carried out in this study. As results showed, AlN NPs had a highly inverse proportionality to bacterial dehydrogenase and OUR, indicating its direct toxicity to the activated sludge viability. The toxicity of AlN NPs was mainly due to the nano-scale of AlN NPs. In SMP, AlN NPs led to the decrease of polysaccharide and humic compounds, but had slight effects on protein. The decrease of tryptophan-like substances in SMP indicated the inhibition of AlN NPs on the bacterial metabolism. Additionally, AlN NPs reduced obviously the molecular weight of SMP, which might be due to the nano-scale of AlN. Copyright © 2017. Published by Elsevier B.V.

  20. Surface Emitting, High Efficiency Near-Vacuum Ultraviolet Light Source with Aluminum Nitride Nanowires Monolithically Grown on Silicon.

    Science.gov (United States)

    Zhao, S; Djavid, M; Mi, Z

    2015-10-14

    To date, it has remained challenging to realize electrically injected light sources in the vacuum ultraviolet wavelength range (∼200 nm or shorter), which are important for a broad range of applications, including sensing, surface treatment, and photochemical analysis. In this Letter, we have demonstrated such a light source with molecular beam epitaxially grown aluminum nitride (AlN) nanowires on low cost, large area Si substrate. Detailed angle dependent electroluminescence studies suggest that, albeit the light is TM polarized, the dominant light emission direction is from the nanowire top surface, that is, along the c axis, due to the strong light scattering effect. Such an efficient surface emitting device was not previously possible using conventional c-plane AlN planar structures. The AlN nanowire LEDs exhibit an extremely large electrical efficiency (>85%), which is nearly ten times higher than the previously reported AlN planar devices. Our detailed studies further suggest that the performance of AlN nanowire LEDs is predominantly limited by electron overflow. This study provides important insight on the fundamental emission characteristics of AlN nanowire LEDs and also offers a viable path to realize an efficient surface emitting near-vacuum ultraviolet light source through direct electrical injection.

  1. Elucidating the origin of spurious modes in aluminum nitride microresonators using a 2-D finite-element model.

    Science.gov (United States)

    Branch, Darren W; Wojciechowski, Kenneth E; Olsson, Roy H

    2014-05-01

    In this work, an approach has been developed to predict the location of large spurious modes in the resonant response of aluminum nitride (AlN) microelectromechanical systems (MEMS) resonators over a wide range of desired operating frequencies. This addresses significant challenges in the design of more complex AlN devices, namely the prediction and elimination of spurious modes in the resonance response. Using the finite element method (FEM), the dispersion curves at wavelengths ranging from 8 to 20 μm were computed. It was determined that the velocities of symmetric Lamb (S0) and high-order antisymmetric (A) modes overlap at specific wavelengths. A 2-D FEM analysis showed that both the S0 and higher order A modes are mutually excited at a common operating wavelength. From this analysis, the coupling-of-modes (COM) parameters were extracted and used to compute the P-matrix and S-parameters using a 6-port transmission matrix. The P-matrix simulation was able to predict the electrical response of the S0 and nearby spurious modes. This work identified specific wavelength regions where COM has limited accuracy because of mode conversion. In these regions, the reflection (κ(p)) and transduction (ζ(p)) parameters change rapidly.

  2. Correlations between optical properties, microstructure, and processing conditions of Aluminum nitride thin films fabricated by pulsed laser deposition

    International Nuclear Information System (INIS)

    Baek, Jonghoon; Ma, James; Becker, Michael F.; Keto, John W.; Kovar, Desiderio

    2007-01-01

    Aluminum nitride (AlN) films were deposited using pulsed laser deposition (PLD) onto sapphire (0001) substrates with varying processing conditions (temperature, pressure, and laser fluence). We have studied the dependence of optical properties, structural properties and their correlations for these AlN films. The optical transmission spectra of the produced films were measured, and a numerical procedure was applied to accurately determine the optical constants for films of non-uniform thickness. The microstructure and texture of the films were studied using various X-ray diffraction techniques. The real part of the refractive index was found to not vary significantly with processing parameters, but absorption was found to be strongly dependent on the deposition temperature and the nitrogen pressure in the deposition chamber. We report that low optical absorption, textured polycrystalline AlN films can be produced by PLD on sapphire substrates at both low and high laser fluence using a background nitrogen pressure of 6.0 x 10 -2 Pa (4.5 x 10 -4 Torr) of 99.9% purity

  3. Low-temperature formation of c-axis-oriented aluminum nitride thin films by plasma-assisted reactive pulsed-DC magnetron sputtering

    Science.gov (United States)

    Takenaka, Kosuke; Satake, Yoshikatsu; Uchida, Giichiro; Setsuhara, Yuichi

    2018-01-01

    The low-temperature formation of c-axis-oriented aluminum nitride thin films was demonstrated by plasma-assisted reactive pulsed-DC magnetron sputtering. The effects of the duty cycle at the pulsed-DC voltage applied to the Al target on the properties of AlN films formed via inductively coupled plasma (ICP)-enhanced pulsed-DC magnetron sputtering deposition were investigated. With decreasing duty cycle at the target voltage, the peak intensity of AlN(0002) increased linearly. The surface roughness of AlN films decreased since there was an increase in film density owing to the impact of energetic ions on the films together with the enhancement of nitriding associated with the relative increase in N radical flux. The improvement of both the crystallinity and surface morphology of AlN films at low temperatures is considered to be caused by the difference between the relative flux values of ions and sputtered atoms.

  4. Metal nitride coatings by physical vapor deposition (PVD) for a wear resistant aluminum extrusion die.

    Science.gov (United States)

    Lee, Su Young; Kim, Sang Ho

    2014-12-01

    The purpose of this study is to investigate the friction and wear behaviors of CrN, TiN, CrAlN, and TiAIN coated onto SKD61 for application to Al 7000 series extrusion dies. On the wear test, the experimental parameters are the load and the counter material's temperature. The results showed that the friction coefficient increased with load but decreased with the counter material's temperature, and the friction coefficients of CrN and CrAIN were lower than the friction coefficients of TiAIN and TIN, especially at a higher temperature. The wear track with different coatings identified different wear behaviors; the wear behavior of CrAIN was found to be abrasive, but the wear behavior of TiN, CrN, and TiAIN was adhesive. Therefore, CrAIN showed the least wear loss with a lower friction coefficient and less adhesion with counter materials at the highest range of wear load and temperature. This resulted in the easy formation of aluminum oxide in the wear track and less Al adhesion; moreover during the hard second phase, AIN dispersed in the film during deposition.

  5. Modeling of Lithium Niobate (LiNbO3) and Aluminum Nitride (AlN) Nanowires Using Comsol Multiphysics Software: The Case of Pressure Sensor

    Science.gov (United States)

    Ahmad, A. A.; Alsaad, A.; Al-Bataineh, Q. M.; Al-Naafa, M. A.

    2018-02-01

    In this study, Lithium niobate (LiNbO3) and Aluminum nitride (AlN) nanostructures were designed and investigated using the COMSOL Multiphysics software for pressure sensing applications. The Finite Element Method (FEM) was used for solving the differential equations with various parameters such as size, length, force, etc. The variation of the total maximum displacement as a function of applied force for various NWs lengths and the variation of the voltage as a function of applied force were plotted and discussed. AlN nanowires exhibit a better piezoelectric response than LiNbO3 nanowires do.

  6. Sintering of nano crystalline o silicon carbide doping with

    Indian Academy of Sciences (India)

    Sinterable silicon carbide powders were prepared by attrition milling and chemical processing of an acheson type -SiC. Pressureless sintering of these powders was achieved by addition of aluminium nitride together with carbon. Nearly 99% sintered density was obtained. The mechanism of sintering was studied by ...

  7. Structure and strength of aluminum with sub-micrometer/micrometer grain size prepared by spark plasma sintering

    DEFF Research Database (Denmark)

    Le, G.M.; Godfrey, A.; Hansen, Niels

    2013-01-01

    A spark plasma sintering (SPS) technique has been applied to prepare fully dense Al samples from Al powder. By applying a sintering temperature of 600°C and a loading pressure of 50MPa, fully recrystallized samples of nearly 100% density with average grain sizes of 5.2μm, 1.3μm and 0.8μm have been...... successfully prepared using a sintering time of less than 30min and without the need for a nitrogen atmosphere. A similarity between the grain size and powder particle size is found, which suggests a potential application of the SPS technique to prepare samples with a variety of grain sizes by tailoring...... the initial powder particle size. The SPS samples show higher strength than Al samples with an identical grain size prepared using thermo-mechanical processing, and a better strength-ductility combination, with the 1.3μm grain size sample showing a yield strength (σ0.2%) of 140MPa and a uniform elongation...

  8. Tribological Behavior of Aluminum Alloy AlSi10Mg-TiB2 Composites Produced by Direct Metal Laser Sintering (DMLS)

    Science.gov (United States)

    Lorusso, Massimo; Aversa, Alberta; Manfredi, Diego; Calignano, Flaviana; Ambrosio, Elisa Paola; Ugues, Daniele; Pavese, Matteo

    2016-08-01

    Direct metal laser sintering (DMLS) is an additive manufacturing technique for the production of parts with complex geometry and it is especially appropriate for structural applications in aircraft and automotive industries. Aluminum-based metal matrix composites (MMCs) are promising materials for these applications because they are lightweight, ductile, and have a good strength-to-weight ratio This paper presents an investigation of microstructure, hardness, and tribological properties of AlSi10Mg alloy and AlSi10Mg alloy/TiB2 composites prepared by DMLS. MMCs were realized with two different compositions: 10% wt. of microsize TiB2, 1% wt. of nanosize TiB2. Wear tests were performed using a pin-on-disk apparatus on the prepared samples. Performances of AlSi10Mg samples manufactured by DMLS were also compared with the results obtained on AlSi10Mg alloy samples made by casting. It was found that the composites displayed a lower coefficient of friction (COF), but in the case of microsize TiB2 reinforcement the wear rate was higher than with nanosize reinforcements and aluminum alloy without reinforcement. AlSi10Mg obtained by DMLS showed a higher COF than AlSi10Mg obtained by casting, but the wear rate was higher in the latter case.

  9. NMR and NQR study of Si-doped (6,0) zigzag single-walled aluminum nitride nanotube as n or P-semiconductors.

    Science.gov (United States)

    Baei, Mohammad T; Peyghan, Ali Ahmadi; Tavakoli, Khadijeh; Babaheydari, Ali Kazemi; Moghimi, Masoumeh

    2012-09-01

    Density functional theory (DFT) calculations were performed to investigate the electronic structure properties of pristine and Si-doped aluminum nitride nanotubes as n or P-semiconductors at the B3LYP/6-31G* level of theory in order to evaluate the influence of Si-doped in the (6,0) zigzag AlNNTs. We extended the DFT calculation to predict the electronic structure properties of Si-doped aluminum nitride nanotubes, which are very important for production of solid-state devices and other applications. To this aim, pristine and Si-doped AlNNT structures in two models (Si(N) and Si(Al)) were optimized, and then the electronic properties, the isotropic (CS(I)) and anisotropic (CS(A)) chemical shielding parameters for the sites of various (27)Al and (14)N atoms, NQR parameters for the sites of various of (27)Al and (14)N atoms, and quantum molecular descriptors were calculated in the optimized structures. The optimized structures, the electronic properties, NMR and NQR parameters, and quantum molecular descriptors for the Si(N) and Si(Al) models show that the Si(N) model is a more reactive material than the pristine or Si(Al) model.

  10. Bulk-wave and guided-wave photoacoustic evaluation of the mechanical properties of aluminum/silicon nitride double-layer thin films.

    Science.gov (United States)

    Zhang, Feifei; Krishnaswamy, Sridhar; Lilley, Carmen M

    2006-12-01

    The development of devices made of micro- and nano-structured thin film materials has resulted in the need for advanced measurement techniques to characterize their mechanical properties. Photoacoustic techniques, which use pulsed laser irradiation to nondestructively induce very high frequency ultrasound in a test object via rapid thermal expansion, are suitable for nondestructive and non-contact evaluation of thin films. In this paper, we compare two photoacoustic techniques to characterize the mechanical parameters of edge-supported aluminum and silicon nitride double-layer thin films. The elastic properties and residual stresses in such films affect their mechanical performance. In a first set of experiments, a femtosecond transient pump-probe technique is used to investigate the Young's moduli of the aluminum and silicon nitride layers by launching ultra-high frequency bulk acoustic waves in the films. The measured transient signals are compared with simulated transient thermoelastic signals in multi-layer structures, and the elastic moduli are determined. Independent pump-probe tests on silicon substrate-supported region and unsupported region are in good agreement. In a second set of experiments, dispersion curves of the A(0) mode of the Lamb waves that propagate along the unsupported films are measured using a broadband photoacoustic guided-wave method. The residual stresses and flexural rigidities for the same set of double-layer membranes are determined from these dispersion curves. Comparisons of the results obtained by the two photoacoustic techniques are made and discussed.

  11. Thermal conductivity of polycrystalline aluminum nitride (AlN ceramics Condutividade térmica de cerâmicas policristalinas de nitreto de alumínio (AlN

    Directory of Open Access Journals (Sweden)

    A. Franco Júnior

    2004-09-01

    Full Text Available In general, polycrystalline ceramics exhibit lower thermal conductivities than their associated single crystals. For instance, at 300K, the theoretical thermal conductivity of single crystal aluminum nitride (AlN is 319 W/m-K, whereas, the values measured for polycrystalline AlN ceramics range from 17 W/m-K to 285 W/m-K. This variation is not unusual for polycrystalline ceramics. The variability is strongly dependent upon the purity of the starting materials and the details of sintering process. The process is important since it influences the microstructure and thus influences the conduction mechanism. In this paper we present the causes of this variation and how it can be controlled.Em geral, cerâmicas policristalinas apresentam condutividade térmica mais baixa do que seus equivalentes monocristais. Por exemplo, a 300 K, a condutividade térmica teórica de monocristais de nitreto de alumínio (AlN é 319 W/m-K, enquanto que, os valores medidos variam desde 17 W/m-K a 285 W/m-K. Esta variação é comum em cerâmicas policristalinas. A variação é fortemente dependente do grau de pureza dos materiais precursores e detalhes dos processos de sinterização. O processo de sinterização é importante porque ele influencia a microestrutura e esta o mecanismo de condutividade. Neste artigo nós apresentamos as causas desta dependência e como ela pode ser controlada.

  12. Enhanced c-axis orientation of aluminum nitride thin films by plasma-based pre-conditioning of sapphire substrates for SAW applications

    Science.gov (United States)

    Gillinger, M.; Shaposhnikov, K.; Knobloch, T.; Stöger-Pollach, M.; Artner, W.; Hradil, K.; Schneider, M.; Kaltenbacher, M.; Schmid, U.

    2018-03-01

    Aluminum nitride (AlN) on sapphire has been investigated with two different pretreatments prior to sputter deposition of the AlN layer to improve the orientation and homogeneity of the thin film. An inverse sputter etching of the substrate in argon atmosphere results in an improvement of the uniformity of the alignment of the AlN grains and hence, in enhanced electro-mechanical AlN film properties. This effect is demonstrated in the raw measurements of SAW test devices. Additionally, the impulse response of several devices shows that a poor AlN thin film layer quality leads to a higher signal damping during the transduction of energy in the inter-digital transducers. As a result, the triple-transit signal cannot be detected at the receiver.

  13. Relative SHG measurements of metal thin films: Gold, silver, aluminum, cobalt, chromium, germanium, nickel, antimony, titanium, titanium nitride, tungsten, zinc, silicon and indium tin oxide

    Directory of Open Access Journals (Sweden)

    Franklin Che

    Full Text Available We have experimentally measured the surface second-harmonic generation (SHG of sputtered gold, silver, aluminum, zinc, tungsten, copper, titanium, cobalt, nickel, chromium, germanium, antimony, titanium nitride, silicon and indium tin oxide thin films. The second-harmonic response was measured in reflection using a 150 fs p-polarized laser pulse at 1561 nm. We present a clear comparison of the SHG intensity of these films relative to each other. Our measured relative intensities compare favorably with the relative intensities of metals with published data. We also report for the first time to our knowledge the surface SHG intensity of tungsten and antimony relative to that of well known metallic thin films such as gold and silver. Keywords: Surface second-harmonic generation, Nonlinear optics, Metal thin films

  14. Proton Irradiation-Induced Metal Voids in Gallium Nitride High Electron Mobility Transistors

    Science.gov (United States)

    2015-09-01

    13. ABSTRACT (maximum 200 words) Gallium nitride / aluminum gallium nitride high electron mobility transistors with nickel/gold (Ni/Au) and...Engineering iv THIS PAGE INTENTIONALLY LEFT BLANK v ABSTRACT Gallium nitride / aluminum gallium nitride high electron mobility transistors with...ABBREVIATIONS 2DEG two-dimensional electron gas AlGaN aluminum gallium nitride AlOx aluminum oxide CCD charged coupled device CTE coefficient of

  15. Method of sintering ceramic materials

    Science.gov (United States)

    Holcombe, Cressie E.; Dykes, Norman L.

    1992-01-01

    A method for sintering ceramic materials is described. A ceramic article is coated with layers of protective coatings such as boron nitride, graphite foil, and niobium. The coated ceramic article is embedded in a container containing refractory metal oxide granules and placed within a microwave oven. The ceramic article is heated by microwave energy to a temperature sufficient to sinter the ceramic article to form a densified ceramic article having a density equal to or greater than 90% of theoretical density.

  16. Discrimination symbol applying method for sintered nuclear fuel product

    International Nuclear Information System (INIS)

    Ishizaki, Jin

    1998-01-01

    The present invention provides a symbol applying method for applying discrimination information such as an enrichment degree on the end face of a sintered nuclear product. Namely, discrimination symbols of information of powders are applied by a sintering aid to the end face of a molded member formed by molding nuclear fuel powders under pressure. Then, the molded product is sintered. The sintering aid comprises aluminum oxide, a mixture of aluminum oxide and silicon dioxide, aluminum hydride or aluminum stearate alone or in admixture. As an applying means of the sintering aid, discrimination symbols of information of powders are drawn by an isostearic acid on the end face of the molded product, and the sintering aid is sprayed thereto, or the sintering aid is applied directly, or the sintering aid is suspended in isostearic acid, and the suspension is applied with a brush. As a result, visible discrimination information can be applied to the sintered member easily. (N.H.)

  17. Effects of Nano-Aluminum Nitride on the Performance of an Ultrahigh-Temperature Inorganic Phosphate Adhesive Cured at Room Temperature

    Directory of Open Access Journals (Sweden)

    Chengkun Ma

    2017-11-01

    Full Text Available Based on the optimal proportion of resin and curing agent, an ultrahigh-temperature inorganic phosphate adhesive was prepared with aluminum dihydric phosphate, aluminium oxide ( α -Al2O3, etc. and cured at room temperature (RT. Then, nano-aluminum nitride (nano-AlN, nano-Cupric oxide (nano-CuO, and nano-titanium oxide (nano-TiO2 were added into the adhesive. Differential scanning calorimetry was conducted using the inorganic phosphate adhesive to analyze the phosphate reactions during heat treatment, and it was found that 15 wt % nano-AlN could clearly decrease the curing temperature. Scanning electron microscopy was used to observe the microphenomenon of the modified adhesive at ultrahigh-temperature. The differential thermal analysis of the inorganic phosphate adhesive showed that the weight loss was approximately 6.5 wt % when the mass ratio of resin to curing agent was 1:1.5. An X-ray diffraction analysis of the adhesive with 10% nano-AlN showed that the phase structure changed from AlPO4(11-0500 to the more stable AlPO4(10-0423 structure after heat treatment. The shear strength of the adhesive containing 10% nano-AlN reached 7.3 MPa at RT due to the addition of nano-AlN, which promoted the formation of phosphate and increased the Al3+.

  18. Effects of Nano-Aluminum Nitride on the Performance of an Ultrahigh-Temperature Inorganic Phosphate Adhesive Cured at Room Temperature.

    Science.gov (United States)

    Ma, Chengkun; Chen, Hailong; Wang, Chao; Zhang, Jifeng; Qi, Hui; Zhou, Limin

    2017-11-03

    Based on the optimal proportion of resin and curing agent, an ultrahigh-temperature inorganic phosphate adhesive was prepared with aluminum dihydric phosphate, aluminium oxide ( α -Al₂O₃), etc. and cured at room temperature (RT). Then, nano-aluminum nitride (nano-AlN), nano-Cupric oxide (nano-CuO), and nano-titanium oxide (nano-TiO₂) were added into the adhesive. Differential scanning calorimetry was conducted using the inorganic phosphate adhesive to analyze the phosphate reactions during heat treatment, and it was found that 15 wt % nano-AlN could clearly decrease the curing temperature. Scanning electron microscopy was used to observe the microphenomenon of the modified adhesive at ultrahigh-temperature. The differential thermal analysis of the inorganic phosphate adhesive showed that the weight loss was approximately 6.5 wt % when the mass ratio of resin to curing agent was 1:1.5. An X-ray diffraction analysis of the adhesive with 10% nano-AlN showed that the phase structure changed from AlPO₄(11-0500) to the more stable AlPO₄(10-0423) structure after heat treatment. The shear strength of the adhesive containing 10% nano-AlN reached 7.3 MPa at RT due to the addition of nano-AlN, which promoted the formation of phosphate and increased the Al 3+ .

  19. Effects of sintering process on wear and mechanical behavior properties of titanium carbide/hexagonal boron nitrid/steel 316L base nanocomposites

    Science.gov (United States)

    Sadooghi, Ali; Payganeh, Gholamhassan

    2018-02-01

    Powder metallurgy process is one of the approaches to manufacture nanocomposite samples, in which the product quality depends upon the pressure, temperature, and sintering time. In this manuscript, steel is selected as the base material together with 2% carbon-based reinforcing TiC particles, and 2% hBN particles as the self-lubricant material. The powders were mixed for 5 h in high ball milling, and compacted with two pressures of 350 and 450 MPa, sintered in the furnace for 2 and 4 h, and sintering temperatures of 1350 and 1450 °C were utilized. SEM, XRD, and EDX tests are performed to identify the nanocomposite structure, and DTA tests are carried out to specify the temperature graph of the material. Finally, hardness, wear, and bending tests are done to find the corresponding mechanical properties of the samples. As a result, the optimum process parameters, including pressure, temperature and sintering duration is achieved. Results show that adding the reinforcing particles into a steel matrix increase the hardness, as well as flexural strength of the nanocomposite product. Also, coefficient of friction shows a decreases.

  20. An unusual nitride network of aluminum-centered octahedra and phosphorus-centered tetrahedra and structure determination from microcrystalline samples.

    Science.gov (United States)

    Neudert, Lukas; Heinke, Frank; Bräuniger, Thomas; Pucher, Florian J; Vaughan, Gavin B; Oeckler, Oliver; Schnick, Wolfgang

    2017-02-28

    A new imidooxonitridophosphate AlP 6 O 3x (NH) 3-3x N 9 with x ≈ 0.33 was synthesized under high-pressure high-temperature conditions. The crystal structure determination of the microcrystalline product involved a combination of electron microscopy, synchrotron X-ray diffraction and solid-state NMR. In the solid there are discrete AlN 6 octahedra that interconnect imidophosphate layers. The network topology is unprecedented but is related to other nitride structures.

  1. Ablation behavior and mechanism of boron nitride - magnesium aluminum silicate ceramic composites in an oxyacetylene combustion flame

    NARCIS (Netherlands)

    Cai, Delong; Yang, Zhihua; Yuan, Jingkun; Duan, Xiaoming; Wang, Shengjin; Ocelik, Vaclav; De Hossond, J. TH. M.; Jia, Dechang; Zhou, Yu

    2018-01-01

    In the present study, ablation behavior and properties of BN-MAS (magnesium aluminum silicate) composites impinged with an oxyacetylene flame at temperatures up to 3100 degrees C were investigated. As ablation time ranged from 5 to 30 s, the mass and linear ablation rates increased from 0.0027 g/s

  2. Influence of additive system (Al2O3-RE2O3 , RE = Y, La, Nd, Dy, Yb on microstructure and mechanical properties of silicon nitride-based ceramics

    Directory of Open Access Journals (Sweden)

    Juliana Marchi

    2009-06-01

    Full Text Available Silicon nitride based ceramics have been widely used as structural ceramics, due mainly to their thermo-mechanical properties such as high density, high thermal shock resistance, corrosion resistance and chemical stability. The aim of this study was to determine the influence of rare earth and aluminum oxide additions as sintering aids on densification, microstructure and mechanical properties of silicon nitride. Silicon nitride mixtures with 91 wt. (% Si3N4 and 9% wt. (% additives were prepared and sintered. The density, microstructure and mechanical properties of the sintered specimens of these mixtures were determined. In most specimens, scanning electron microscopic examination and X ray diffraction analysis revealed elongated grains of β-Si3N4 with aspect ratio of about 2.0 and dispersed in a glassy phase. The density of the sintered specimens was higher than 94% of the theoretical density (td and specimens with La2O3 and Al2O3 additions exhibited the highest value. The results of this investigation indicate that the rare earth ion size influences densification of silicon nitride, but this correlation was not observed in specimens containing two different rare earth oxides. The hardness values varied in direct proportion to the density of the specimens and the fracture toughness values were influenced by the composition of the intergranular glassy phase.

  3. Synthesis of ternary metal nitride nanoparticles using mesoporous carbon nitride as reactive template.

    Science.gov (United States)

    Fischer, Anna; Müller, Jens Oliver; Antonietti, Markus; Thomas, Arne

    2008-12-23

    Mesoporous graphitic carbon nitride was used as both a nanoreactor and a reactant for the synthesis of ternary metal nitride nanoparticles. By infiltration of a mixture of two metal precursors into mesoporous carbon nitride, the pores act first as a nanoconfinement, generating amorphous mixed oxide nanoparticles. During heating and decomposition, the carbon nitride second acts as reactant or, more precisely, as a nitrogen source, which converts the preformed mixed oxide nanoparticles into the corresponding nitride (reactive templating). Using this approach, ternary metal nitride particles with diameters smaller 10 nm composed of aluminum gallium nitride (Al-Ga-N) and titanium vanadium nitride (Ti-V-N) were synthesized. Due to the confinement effect of the carbon nitride matrix, the composition of the resulting metal nitride can be easily adjusted by changing the concentration of the preceding precursor solution. Thus, ternary metal nitride nanoparticles with continuously adjustable metal composition can be produced.

  4. The use of polyimide-modified aluminum nitride fillers in AlN@PI/epoxy composites with enhanced thermal conductivity for electronic encapsulation.

    Science.gov (United States)

    Zhou, Yongcun; Yao, Yagang; Chen, Chia-Yun; Moon, Kyoungsik; Wang, Hong; Wong, Ching-Ping

    2014-04-24

    Polymer modified fillers in composites has attracted the attention of numerous researchers. These fillers are composed of core-shell structures that exhibit enhanced physical and chemical properties that are associated with shell surface control and encapsulated core materials. In this study, we have described an apt method to prepare polyimide (PI)-modified aluminum nitride (AlN) fillers, AlN@PI. These fillers are used for electronic encapsulation in high performance polymer composites. Compared with that of untreated AlN composite, these AlN@PI/epoxy composites exhibit better thermal and dielectric properties. At 40 wt% of filler loading, the highest thermal conductivity of AlN@PI/epoxy composite reached 2.03 W/mK. In this way, the thermal conductivity is approximately enhanced by 10.6 times than that of the used epoxy matrix. The experimental results exhibiting the thermal conductivity of AlN@PI/epoxy composites were in good agreement with the values calculated from the parallel conduction model. This research work describes an effective pathway that modifies the surface of fillers with polymer coating. Furthermore, this novel technique improves the thermal and dielectric properties of fillers and these can be used extensively for electronic packaging applications.

  5. Characterization of a roof tile-shaped out-of-plane vibrational mode in aluminum-nitride-actuated self-sensing micro-resonators for liquid monitoring purposes

    Science.gov (United States)

    Kucera, Martin; Wistrela, Elisabeth; Pfusterschmied, Georg; Ruiz-Díez, Víctor; Manzaneque, Tomás; Luis Sánchez-Rojas, José; Schalko, Johannes; Bittner, Achim; Schmid, Ulrich

    2014-06-01

    This Letter reports on an advanced out-of-plane bending mode for aluminum-nitride (AlN)-actuated cantilevers. Devices of different thickness were fabricated and characterized by optical and electrical measurements in air and liquid media having viscosities up to 615 cP and compared to the classical out-of-plane bending and torsional modes. Finite element method eigenmode analyses were performed showing excellent agreement with the measured mode shapes and resonance frequencies. Quality factors (Q-factor) and the electrical behavior were evaluated as a function of the cantilever thickness. A very high Q-factor of about 197 was achieved in deionized water at a low resonance frequency of 336 kHz, being up to now, the highest quality factor reported for cantilever sensors in liquid media. Compared to the quality factor of the common fundamental out-of-plane bending mode, a 5 times higher Q-factor was achieved. Furthermore, the strain related conductance peak of the roof tile-shaped mode is superior. Compared to any out-of-plane bending mode, this combination of most beneficial properties is unique and make this mode superior for a large variety of resonator-based sensing applications.

  6. Impact of layer and substrate properties on the surface acoustic wave velocity in scandium doped aluminum nitride based SAW devices on sapphire

    Energy Technology Data Exchange (ETDEWEB)

    Gillinger, M., E-mail: manuel.gillinger@tuwien.ac.at; Knobloch, T.; Schneider, M.; Schmid, U. [Institute of Sensor and Actuator Systems, TU Wien, 1040 Vienna (Austria); Shaposhnikov, K.; Kaltenbacher, M. [Institute of Mechanics and Mechatronics, TU Wien, 1040 Vienna (Austria)

    2016-06-06

    This paper investigates the performance of surface acoustic wave (SAW) devices consisting of reactively sputter deposited scandium doped aluminum nitride (Sc{sub x}Al{sub 1-x}N) thin films as piezoelectric layers on sapphire substrates for wireless sensor or for RF-MEMS applications. To investigate the influence of piezoelectric film thickness on the device properties, samples with thickness ranging from 500 nm up to 3000 nm are fabricated. S{sub 21} measurements and simulations demonstrate that the phase velocity is predominantly influenced by the mass density of the electrode material rather than by the thickness of the piezoelectric film. Additionally, the wave propagation direction is varied by rotating the interdigital transducer structures with respect to the crystal orientation of the substrate. The phase velocity is about 2.5% higher for a-direction compared to m-direction of the sapphire substrate, which is in excellent agreement with the difference in the anisotropic Young's modulus of the substrate corresponding to these directions.

  7. Plasma etch characteristics of aluminum nitride mask layers grown by low-temperature plasma enhanced atomic layer deposition in SF{sub 6} based plasmas

    Energy Technology Data Exchange (ETDEWEB)

    Perros, Alexander; Bosund, Markus; Sajavaara, Timo; Laitinen, Mikko; Sainiemi, Lauri; Huhtio, Teppo; Lipsanen, Harri [Department of Micro- and Nanosciences, Aalto University School of Electrical Engineering, P.O. Box 13500, FI-00076 Aalto (Finland); Department of Physics, University of Jyvaeskylae, P.O. Box 35, 40014, Jyvaeskylae,Finland (Finland); Department of Micro and Nanosciences, School of Electrical Engineering, Aalto University, P.O. Box 13500, FI-00076, Aalto (Finland)

    2012-01-15

    The plasma etch characteristics of aluminum nitride (AlN) deposited by low-temperature, 200 deg. C, plasma enhanced atomic layer deposition (PEALD) was investigated for reactive ion etch (RIE) and inductively coupled plasma-reactive ion etch (ICP-RIE) systems using various mixtures of SF{sub 6} and O{sub 2} under different etch conditions. During RIE, the film exhibits good mask properties with etch rates below 10r nm/min. For ICP-RIE processes, the film exhibits exceptionally low etch rates in the subnanometer region with lower platen power. The AlN film's removal occurred through physical mechanisms; consequently, rf power and chamber pressure were the most significant parameters in PEALD AlN film removal because the film was inert to the SF{sub x}{sup +} and O{sup +} chemistries. The etch experiments showed the film to be a resilient masking material. This makes it an attractive candidate for use as an etch mask in demanding SF{sub 6} based plasma etch applications, such as through-wafer etching, or when oxide films are not suitable.

  8. Surface modification of aluminum nitride by polysilazane and its polymer-derived amorphous silicon oxycarbide ceramic for the enhancement of thermal conductivity in silicone rubber composite

    Science.gov (United States)

    Chiu, Hsien Tang; Sukachonmakul, Tanapon; Kuo, Ming Tai; Wang, Yu Hsiang; Wattanakul, Karnthidaporn

    2014-02-01

    Polysilazane (PSZ) and its polymer-derived amorphous silicon oxycarbide (SiOC) ceramic were coated on aluminum nitride (AlN) by using a dip-coating method to allow moisture-crosslinking of PSZ on AlN, followed by heat treatment at 700 °C in air to convert PSZ into SiOC on AlN. The results from FTIR, XPS and SEM indicated that the surface of AlN was successfully coated by PSZ and SiOC film. It was found that the introduction of PSZ and SiOC film help improve in the interfacial adhesion between the modified AlN (PSZ/AlN and SiOC/AlN) and silicone rubber lead to the increase in the thermal conductivity of the composites since the thermal boundary resistance at the filler-matrix interface was decreased. However, the introduction of SiOC as an intermediate layer between AlN and silicone rubber could help increase the thermal energy transport at the filler-matrix interface rather than using PSZ. This result was due to the decrease in the surface roughness and thickness of SiOC film after heat treatment at 700 °C in air. Thus, in the present work, a SiOC ceramic coating could provide a new surface modification for the improvement of the interfacial adhesion between the thermally conductive filler and the matrix in which can enhance the thermal conductivity of the composites.

  9. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Unknown

    ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 µm and. 25 µm, and a sintered silicon ... the sintered silicon carbide was found out to be linked to its previous thermal history. Keywords. Indentation fatigue .... This presence of a grain size effect in the RIF behaviour of the ...

  10. Silicon nitride-fabrication, forming and properties

    International Nuclear Information System (INIS)

    Yehezkel, O.

    1983-01-01

    This article, which is a literature survey of the recent years, includes description of several methods for the formation of silicone nitride, and five methods of forming: Reaction-bonded silicon nitride, sintering, hot pressing, hot isostatic pressing and chemical vapour deposition. Herein are also included data about mechanical and physical properties of silicon nitride and the relationship between the forming method and the properties. (author)

  11. Co-current Doping Effect of Nanoscale Carbon and Aluminum Nitride on Critical Current Density and Flux Pinning Properties of Bulk MgB2 Superconductors

    Science.gov (United States)

    Tripathi, D.; Dey, T. K.

    2018-01-01

    The effect of nanoscale aluminum nitride (n-AlN) and carbon (n-C) co-doping on superconducting properties of polycrystalline bulk MgB2 superconductor has been investigated. Polycrystalline pellets of MgB2 , MgB2 + 0.5 wt% AlN (nano), MgB_{1.99}C_{0.01} and MgB_{1.99}C_{0.01} + 0.5 wt% AlN (nano) have been synthesized by a solid reaction process under inert atmosphere. The transition temperature (TC) estimated from resistivity measurement indicates only a small decrease for C (nano) and co-doped MgB2 samples. The magnetic field response of investigated samples has been measured at 4, 10, and 20 K in the field range ± 6 T. MgB2 pellets co-doped with 0.5 wt% n-AlN and 1 wt% n-C display appreciable enhancement in critical current density (J_C ) of MgB2 in both low (≥ 3 times), as well as, high-field region (≥ 15 times). J_C versus H behavior of both pristine and doped MgB2 pellets is well explained in the light of the collective pinning model. Further, the normalized pinning force density f_p(= F_p/F_{pmax}) displays a fair correspondence with the scaling procedure proposed by Eisterer et al. Moreover, the scaled data of the pinning force density (i.e., f_p{-}h data) of the investigated pellets at different temperature are well interpreted by a modified Dew-Hughes expression reported by Sandu and Chee.

  12. Effect of pyrolysis atmospheres on the morphology of polymer-derived silicon oxynitrocarbide ceramic films coated aluminum nitride surface and the thermal conductivity of silicone rubber composites

    Science.gov (United States)

    Chiu, Hsien T.; Sukachonmakul, Tanapon; Wang, Chen H.; Wattanakul, Karnthidaporn; Kuo, Ming T.; Wang, Yu H.

    2014-02-01

    Amorphous silicon oxycarbide (SiOC) and silicon oxynitrocarbide (SiONC) ceramic films coated aluminum nitride (AlN) were prepared by using preceramic-polysilazane (PSZ) with dip-coating method, followed by pyrolysis at 700 °C in different (air, Ar, N2 and NH3) atmospheres to converted PSZ into SiOCair and SiONC(Ar,N2andNH3) ceramic. The existence of amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface was characterized by FTIR, XRD and XPS. The interfacial adhesion between silicone rubber and AlN was significantly improved after the introduction of amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface. It can be observed from AFM that the pyrolysis of PSZ at different atmosphere strongly affected to films morphology on AlN surface as SiOCair and SiONCNH3 ceramic films were more flat and smooth than SiONCN2 and SiONCAr ceramic films. Besides, the enhancement of the thermal conductivity of silicone rubber composites was found to be related to the decrease in the surface roughness of SiOCair and SiONC(Ar,N2andNH3) ceramic films on AlN surface. This present work provided an alternative surface modification of thermally conductive fillers to improve the thermal conductivity of silicon rubber composites by coating with amorphous SiOCair and SiONC(Ar,N2andNH3) ceramic films.

  13. Sinterable powders

    International Nuclear Information System (INIS)

    Zanghi, J.S.; Kasprzyk, M.R.

    1979-01-01

    A description is given of sinterable powders and methods of producing sintered products using such powders. The powders consist of (a) a particulate ceramic material, e.g. SiC, having specified particle size and surface area; (b) a carbon source material, e.g. sugar or a phenol-formaldehyde resin; and (c) a residue from a solution of H 3 BO 3 , B 2 O 3 , or mixtures of these as sintering aid. (U.K.)

  14. Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate.

    Science.gov (United States)

    Chu, Byung Hwan; Kang, Byoung Sam; Hung, Sheng Chun; Chen, Ke Hung; Ren, Fan; Sciullo, Andrew; Gila, Brent P; Pearton, Stephen J

    2010-01-01

    Immobilized aluminum gallium nitride (AlGaN)/GaN high electron mobility transistors (HEMTs) have shown great potential in the areas of pH, chloride ion, and glucose detection in exhaled breath condensate (EBC). HEMT sensors can be integrated into a wireless data transmission system that allows for remote monitoring. This technology offers the possibility of using AlGaN/GaN HEMTs for extended investigations of airway pathology of detecting glucose in EBC without the need for clinical visits. HEMT structures, consisting of a 3-microm-thick undoped GaN buffer, 30-A-thick Al(0.3)Ga(0.7)N spacer, and 220-A-thick silicon-doped Al(0.3)Ga(0.7)N cap layer, were used for fabricating the HEMT sensors. The gate area of the pH, chloride ion, and glucose detection was immobilized with scandium oxide (Sc(2)O(3)), silver chloride (AgCl) thin film, and zinc oxide (ZnO) nanorods, respectively. The Sc(2)O(3)-gated sensor could detect the pH of solutions ranging from 3 to 10 with a resolution of approximately 0.1 pH. A chloride ion detection limit of 10(-8) M was achieved with a HEMT sensor immobilized with the AgCl thin film. The drain-source current of the ZnO nanorod-gated AlGaN/GaN HEMT sensor immobilized with glucose oxidase showed a rapid response of less than 5 seconds when the sensor was exposed to the target glucose in a buffer with a pH value of 7.4. The sensor could detect a wide range of concentrations from 0.5 nM to 125 microM. There is great promise for using HEMT-based sensors to enhance the detection sensitivity for glucose detection in EBC. Depending on the immobilized material, HEMT-based sensors can be used for sensing different materials. These electronic detection approaches with rapid response and good repeatability show potential for the investigation of airway pathology. The devices can also be integrated into a wireless data transmission system for remote monitoring applications. This sensor technology could use the exhaled breath condensate to measure the

  15. Enhanced performance of a quasi-solid-state dye-sensitized solar cell with aluminum nitride in its gel polymer electrolyte

    KAUST Repository

    Huang, Kuan-Chieh

    2011-08-01

    The effects of incorporation of aluminum nitride (AlN) in the gel polymer electrolyte (GPE) of a quasi-solid-state dye-sensitized solar cell (DSSC) were studied in terms of performance of the cell. The electrolyte, consisting of lithium iodide (LiI), iodine (I2), and 4-tert-butylpyridine (TBP) in 3-methoxypropionitrile (MPN), was solidified with poly(vinyidene fluoride-co-hexafluoro propylene) (PVDF-HFP). The 0.05, 0.1, 0.3, and 0.5 wt% of AlN were added to the electrolyte for this study. XRD analysis showed a reduction of crystallinity in the polymer PVDF-HFP for all the additions of AlN. The DSSC fabricated with a GPE containing 0.1 wt% AlN showed a short-circuit current density (JSC) and power-conversion efficiency (η) of 12.92±0.54 mA/cm2 and 5.27±0.23%, respectively, at 100 mW/cm2 illumination, in contrast to the corresponding values of 11.52±0.21 mA/cm2 and 4.75±0.08% for a cell without AlN. The increases both in JSC and in η of the promoted DSSC are attributed to the higher apparent diffusion coefficient of I- in its electrolyte (3.52×10-6 cm2/s), compared to that in the electrolyte without AlN of a DSSC (2.97×10-6 cm 2/s). At-rest stability of the quasi-solid-state DSSC with 0.1 wt% of AlN was found to decrease hardly by 5% and 7% at room temperature and at 40 °C, respectively, after 1000 h duration. The DSSC with a liquid electrolyte showed a decrease of about 40% at room temperature, while it virtually lost its performance in about 150 h at 40 °C. Explanations are further substantiated by means of electrochemical impedance spectroscopy (EIS), scanning electron microscopy (SEM), and by porosity measurements. © 2010 Elsevier B.V.

  16. Aluminum powder metallurgy processing

    Energy Technology Data Exchange (ETDEWEB)

    Flumerfelt, J.F.

    1999-02-12

    The objective of this dissertation is to explore the hypothesis that there is a strong linkage between gas atomization processing conditions, as-atomized aluminum powder characteristics, and the consolidation methodology required to make components from aluminum powder. The hypothesis was tested with pure aluminum powders produced by commercial air atomization, commercial inert gas atomization, and gas atomization reaction synthesis (GARS). A comparison of the GARS aluminum powders with the commercial aluminum powders showed the former to exhibit superior powder characteristics. The powders were compared in terms of size and shape, bulk chemistry, surface oxide chemistry and structure, and oxide film thickness. Minimum explosive concentration measurements assessed the dependence of explosibility hazard on surface area, oxide film thickness, and gas atomization processing conditions. The GARS aluminum powders were exposed to different relative humidity levels, demonstrating the effect of atmospheric conditions on post-atomization processing conditions. The GARS aluminum powders were exposed to different relative humidity levels, demonstrating the effect of atmospheric conditions on post-atomization oxidation of aluminum powder. An Al-Ti-Y GARS alloy exposed in ambient air at different temperatures revealed the effect of reactive alloy elements on post-atomization powder oxidation. The pure aluminum powders were consolidated by two different routes, a conventional consolidation process for fabricating aerospace components with aluminum powder and a proposed alternative. The consolidation procedures were compared by evaluating the consolidated microstructures and the corresponding mechanical properties. A low temperature solid state sintering experiment demonstrated that tap densified GARS aluminum powders can form sintering necks between contacting powder particles, unlike the total resistance to sintering of commercial air atomization aluminum powder.

  17. Nitriding of titanium and titanium: 8 percent aluminum, 1 percent molybdenum, 1 percent vanadium alloy with an ion-beam source

    Science.gov (United States)

    Gill, A.

    1983-01-01

    Titanium and Ti-8Al-1Mo-1V alloy were nitrided with an ion-beam source of nitrogen or argon and nitrogen at a total pressure of 2 x 10 to the minus 4th power to 10 x 10 to the minus 4th power torr. The treated surface was characterized by surface profilometry, X-ray diffractometry, Auger electron spectroscopy and microhardness measurements. The tetragonal Ti2N phase formed in pure titanium and Ti-8Al-1Mo-1V alloy with traces of AlN in the alloy. Two opposite processes competed during the ion-beam-nitriding process: (1) formation of nitrides in the surface layer and (2) sputtering of the nitrided layers by the ion beam. The highest surface hardnesses, about 500 kg/sq mm in titanium and 800 kg/sq mm in Ti-8Al-1Mo-1V, were obtained by ion nitriding with an ion beam of pure nitrogen at 4.2 x 10 to the minus 4th power torr at a beam voltage of 1000 V.

  18. Preparation and study of the nitrides and mixed carbide-nitrides of uranium and of plutonium

    International Nuclear Information System (INIS)

    Anselin, F.

    1966-06-01

    A detailed description is given of a simple method for preparing uranium and plutonium nitrides by the direct action of nitrogen under pressure at moderate temperatures (about 400 C) on the partially hydrogenated bulk metal. It is shown that there is complete miscibility between the UN and PuN phases. The variations in the reticular parameters of the samples as a function of temperature and in the presence of oxide have been used to detect and evaluate the solubility of oxygen in the different phases. A study has been made of the sintering of these nitrides as a function of the preparation conditions with or without sintering additives. A favorable but non-reproducible, effect has been found for traces of oxide. The best results were obtained for pure UN at 1600 C (96 per cent theoretical density) on condition that a well defined powder, was used. The criterion used is the integral width of the X-ray diffraction lines. The compounds UN and PuN are completely miscible with the corresponding carbides. This makes it possible to prepare carbide-nitrides of the general formula (U,Pu) (C,N) by solid-phase diffusion, at around 1400 C. The sintering of these carbide-nitrides is similar to that of the carbides if the nitrogen content is low; in particular, nickel is an efficient sintering agent. For high contents, the sintering is similar to that of pure nitrides. (author) [fr

  19. Indentation fatigue in silicon nitride, alumina and silicon carbide ...

    Indian Academy of Sciences (India)

    Repeated indentation fatigue (RIF) experiments conducted on the same spot of different structural ceramics viz. a hot pressed silicon nitride (HPSN), sintered alumina of two different grain sizes viz. 1 m and 25 m, and a sintered silicon carbide (SSiC) are reported. The RIF experiments were conducted using a Vicker's ...

  20. Process for microwave sintering boron carbide

    Science.gov (United States)

    Holcombe, C.E.; Morrow, M.S.

    1993-10-12

    A method of microwave sintering boron carbide comprises leaching boron carbide powder with an aqueous solution of nitric acid to form a leached boron carbide powder. The leached boron carbide powder is coated with a glassy carbon precursor to form a coated boron carbide powder. The coated boron carbide powder is consolidated in an enclosure of boron nitride particles coated with a layer of glassy carbon within a container for microwave heating to form an enclosed coated boron carbide powder. The enclosed coated boron carbide powder is sintered within the container for microwave heating with microwave energy.

  1. Zirconia doped silicon nitride ceramics

    International Nuclear Information System (INIS)

    Ekstroem, T.; Falk, L.K.L.; Knutson-Wedel, E.M.

    1992-01-01

    This presentation is concerned with the value added to silicon nitride ceramics by doping with smaller amounts of zirconia. The effects which the different sintering additives ZrO 2 , Y 2 O 3 stabilized ZrO 2 , Y 2 O 3 , Al 2 O 3 and AIN have upon densification, α- to β-Si 3 N 4 phase transformation and final microstructure are discussed. Silicon nitride ceramics containing these additives have been formed either by pressureless sintering or by hot isostatic pressing (HIP) at temperatures in the range 1550 to 1775 deg C. The fine scale microstructures of the densified materials, characterized by analytical electron microscopy and X-ray diffractometry, have been related to mechanical properties viz. strength, hardness and indentation fracture toughness. The most pronounced value added by ZrO 2 doping is that a properly adjusted combination of sintering aids makes it possible to substantially reduce the volume fraction of residual intergranular glass through formation of crystalline ZrO 2 (Y 2 O 3 ) solid solutions. This behaviours opens the possibility of developing new silicon nitride ceramics for high temperature applications. 25 refs., 4 figs

  2. New materials through a variety of sintering methods

    Science.gov (United States)

    Jaworska, L.; Cyboroń, J.; Cygan, S.; Laszkiewicz-Łukasik, J.; Podsiadło, M.; Novak, P.; Holovenko, Y.

    2018-03-01

    New sintering techniques make it possible to obtain materials with special properties that are impossible to obtain by conventional sintering techniques. This issue is especially important for ceramic materials for application under extreme conditions. Following the tendency to limit critical materials in manufacturing processes, the use of W, Si, B, Co, Cr should be limited, also. One of the cheapest and widely available materials is aluminum oxide, which shows differences in phase composition, grain size, hardness, strain and fracture toughness of the same type of powder, sintered via various methods. In this paper the alumina was sintered using the conventional free sintering process, microwave sintering, Spark Plasma Sintering (SPS), high pressure-high temperature method (HP-HT) and High Pressure Spark Plasma Sintering (HP SPS). Phase composition analysis, by X-ray diffraction of the alumina materials sintered using various methods, was carried out. For the conventional sintering method, compacts are composed of α-Al2O3 and θ-Al2O3. For compacts sintered using SPS, microwave and HP-HT methods, χ-Al2O3 and γ-Al2O3 phases were additionally present. Mechanical and physical properties of the obtained materials were compared between the methods of sintering. On the basis of images from scanning electron microscope quantitative analysis was performed to determine the degree of grain growth of alumina after sintering.

  3. Lightweight Aluminum/Nano composites for Automotive Drive Train Applications

    Energy Technology Data Exchange (ETDEWEB)

    Chelluri, Bhanumathi; Knoth, Edward A.; Schumaker, Edward J.

    2012-12-14

    During Phase I, we successfully processed air atomized aluminum powders via Dynamic Magnetic Compaction (DMC) pressing and subsequent sintering to produce parts with properties similar to wrought aluminum. We have also showed for the first time that aluminum powders can be processed without lubes via press and sintering to 100 % density. This will preclude a delube cycle in sintering and promote environmentally friendly P/M processing. Processing aluminum powders via press and sintering with minimum shrinkage will enable net shape fabrication. Aluminum powders processed via a conventional powder metallurgy process produce too large a shrinkage. Because of this, sinter parts have to be machined into specific net shape. This results in increased scrap and cost. Fully sintered aluminum alloy under this Phase I project has shown good particle-to-particle bonding and mechanical properties. We have also shown the feasibility of preparing nano composite powders and processing via pressing and sintering. This was accomplished by dispersing nano silicon carbide (SiC) powders into aluminum matrix comprising micron-sized powders (<100 microns) using a proprietary process. These composite powders of Al with nano SiC were processed using DMC press and sinter process to sinter density of 85-90%. The process optimization along with sintering needs to be carried out to produce full density composites.

  4. Development of a Photoelectrochemical Etch Process to Enable Heterogeneous Substrate Integration of Epitaxial III-Nitride Semiconductors

    Science.gov (United States)

    2017-12-01

    and Acronyms Al2O3 aluminum oxide (sapphire) AlN aluminum nitride AlGaN aluminum gallium nitride Au gold BCl3 boron trichloride (gas) Black...Approved for public release; distribution is unlimited. 1 1. Introduction The III-nitride class of materials ( aluminum nitride [AlN], gallium...on which these materials are grown have been mostly limited to aluminum oxide (Al2O3, single-crystal sapphire), a GaN-on-sapphire template, or free

  5. Compressive creep of silicon nitride

    International Nuclear Information System (INIS)

    Silva, C.R.M. da; Melo, F.C.L. de; Cairo, C.A.; Piorino Neto, F.

    1990-01-01

    Silicon nitride samples were formed by pressureless sintering process, using neodymium oxide and a mixture of neodymium oxide and yttrio oxide as sintering aids. The short term compressive creep behaviour was evaluated over a stress range of 50-300 MPa and temperature range 1200 - 1350 0 C. Post-sintering heat treatments in nitrogen with a stepwise decremental variation of temperature were performed in some samples and microstructural analysis by X-ray diffraction and transmission electron microscopy showed that the secondary crystalline phase which form from the remnant glass are dependent upon composition and percentage of aditives. Stress exponent values near to unity were obtained for materials with low glass content suggesting grain boundary diffusion accommodation processes. Cavitation will thereby become prevalent with increase in stress, temperature and decrease in the degree of crystallization of the grain boundary phase. (author) [pt

  6. Synthesis Of A Precursor Of Silicon Nitride

    Science.gov (United States)

    Philipp, Warren H.; Cornell, Linda; Lin, Y. C.

    1994-01-01

    Promising route toward production of highly pure, finely divided, easily sinterable silicon nitride (Si3N4) involves thermal decomposition of silicon diimide {Si(NH)2} prepared by ammonolysis of Si(SCN)4 in CH3CN and purified by complete extraction of byproduct NH4SCN by use of ammonia at temperature and pressure above critical point.

  7. Titanium nitride deposition in titanium implant alloys produced by powder metallurgy

    International Nuclear Information System (INIS)

    Henriques, V.A.R.; Cairo, C.A.A.; Faria, J.; Lemos, T.G.; Galvani, E.T.

    2009-01-01

    Titanium nitride (TiN) is an extremely hard material, often used as a coating on titanium alloy, steel, carbide, and aluminum components to improve wear resistance. Electron Beam Physical Vapor Deposition (EB-PVD) is a form of deposition in which a target anode is bombarded with an electron beam given off by a charged tungsten filament under high vacuum, producing a thin film in a substrate. In this work are presented results of TiN deposition in targets and substrates of Ti (C.P.) and Ti- 13 Nb- 13 Zr obtained by powder metallurgy. Samples were produced by mixing of hydride metallic powders followed by uniaxial and cold isostatic pressing with subsequent densification by sintering between 900°C up to 1400 °C, in vacuum. The deposition was carried out under nitrogen atmosphere. Sintered samples were characterized for phase composition, microstructure and microhardness by X-ray diffraction, scanning electron microscopy and Vickers indentation, respectively. It was shown that the samples were sintered to high densities and presented homogeneous microstructure, with ideal characteristics for an adequate deposition and adherence. The film layer presented a continuous structure with 15μm. (author)

  8. Sintering and densification; new techniques: sinter forging

    International Nuclear Information System (INIS)

    Winnubst, A.J.A.

    1998-01-01

    In this chapter pressure assisted sintering methods will be described. Attention will mainly be paid to sinter forging as a die-wall free uniaxial pressure sintering technique, where large creep strains are possible. Sinter forging is an effective tool to reduce sintering temperature and time and to obtain a nearly theoretically dense ceramic. In this way grain size in tetragonal zirconia ceramics can be reduced down to 100 nm. Another important phenomenon is the reduction of the number density and size of cracks and flaws resulting in higher strength and improved reliability, which is of utmost importance for engineering ceramics. The creep deformation during sinter forging causes a rearrangement of the grains resulting in a reduction of interatomic spaces between grains, while grain boundary (glassy) phases can be removed. The toughness and in some cases the wear resistance is enhanced after sinter forging as a result of the grain-boundary-morphology improvement. (orig.)

  9. Sintered tantalum carbide coatings on graphite substrates: Highly reliable protective coatings for bulk and epitaxial growth

    International Nuclear Information System (INIS)

    Nakamura, Daisuke; Suzumura, Akitoshi; Shigetoh, Keisuke

    2015-01-01

    Highly reliable low-cost protective coatings have been sought after for use in crucibles and susceptors for bulk and epitaxial film growth processes involving wide bandgap materials. Here, we propose a production technique for ultra-thick (50–200 μmt) tantalum carbide (TaC) protective coatings on graphite substrates, which consists of TaC slurry application and subsequent sintering processes, i.e., a wet ceramic process. Structural analysis of the sintered TaC layers indicated that they have a dense granular structure containing coarse grain with sizes of 10–50 μm. Furthermore, no cracks or pinholes penetrated through the layers, i.e., the TaC layers are highly reliable protective coatings. The analysis also indicated that no plastic deformation occurred during the production process, and the non-textured crystalline orientation of the TaC layers is the origin of their high reliability and durability. The TaC-coated graphite crucibles were tested in an aluminum nitride (AlN) sublimation growth process, which involves extremely corrosive conditions, and demonstrated their practical reliability and durability in the AlN growth process as a TaC-coated graphite. The application of the TaC-coated graphite materials to crucibles and susceptors for use in bulk AlN single crystal growth, bulk silicon carbide (SiC) single crystal growth, chemical vapor deposition of epitaxial SiC films, and metal-organic vapor phase epitaxy of group-III nitrides will lead to further improvements in crystal quality and reduced processing costs

  10. Optimization of Controllable Factors in the Aluminum Silicon Eutectic Paste and Rear Silicon Nitride Mono-Passivation Layer of PERC Solar Cells

    Science.gov (United States)

    Park, Sungeun; Park, Hyomin; Kim, Dongseop; Yang, JungYup; Lee, Dongho; Kim, Young-Su; Kim, Hyun-Jong; Suh, Dongchul; Min, Byoung Koun; Kim, Kyung Nam; Park, Se Jin; Kim, Donghwan; Lee, Hae-Seok; Nam, Junggyu; Kang, Yoonmook

    2018-03-01

    Passivated emitter and rear contact (PERC) is a promising technology owing to high efficiency can be achieved with p-type wafer and their easily applicable to existing lines. In case of using p-type mono wafer, 0.5-1% efficiency increase is expected with PERC technologies compared to existing Al BSF solar cells, while for multi-wafer solar cells it is 0.5-0.8%. We addressed the optimization of PERC solar cells using the Al paste. The paste was prepared from the aluminum-silicon alloy with eutectic composition to avoid the formation of voids that degrade the open-circuit voltage. The glass frit of the paste was changed to improve adhesion. Scanning electron microscopy revealed voids and local back surface field between the aluminum electrode and silicon base. We confirmed the conditions on the SiNx passivation layer for achieving higher efficiency and better adhesion for long-term stability. The cell characteristics were compared across cells containing different pastes. PERC solar cells with the Al/Si eutectic paste exhibited the efficiency of 19.6%.

  11. Electrospun Gallium Nitride Nanofibers

    International Nuclear Information System (INIS)

    Melendez, Anamaris; Morales, Kristle; Ramos, Idalia; Campo, Eva; Santiago, Jorge J.

    2009-01-01

    The high thermal conductivity and wide bandgap of gallium nitride (GaN) are desirable characteristics in optoelectronics and sensing applications. In comparison to thin films and powders, in the nanofiber morphology the sensitivity of GaN is expected to increase as the exposed area (proportional to the length) increases. In this work we present electrospinning as a novel technique in the fabrication of GaN nanofibers. Electrospinning, invented in the 1930s, is a simple, inexpensive, and rapid technique to produce microscopically long ultrafine fibers. GaN nanofibers are produced using gallium nitrate and dimethyl-acetamide as precursors. After electrospinning, thermal decomposition under an inert atmosphere is used to pyrolyze the polymer. To complete the preparation, the nanofibers are sintered in a tube furnace under a NH 3 flow. Both scanning electron microscopy and profilometry show that the process produces continuous and uniform fibers with diameters ranging from 20 to a few hundred nanometers, and lengths of up to a few centimeters. X-ray diffraction (XRD) analysis shows the development of GaN nanofibers with hexagonal wurtzite structure. Future work includes additional characterization using transmission electron microscopy and XRD to understand the role of precursors and nitridation in nanofiber synthesis, and the use of single nanofibers for the construction of optical and gas sensing devices.

  12. Conducting metal oxide and metal nitride nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    DiSalvo, Jr., Francis J.; Subban, Chinmayee V.

    2017-12-26

    Conducting metal oxide and nitride nanoparticles that can be used in fuel cell applications. The metal oxide nanoparticles are comprised of for example, titanium, niobium, tantalum, tungsten and combinations thereof. The metal nitride nanoparticles are comprised of, for example, titanium, niobium, tantalum, tungsten, zirconium, and combinations thereof. The nanoparticles can be sintered to provide conducting porous agglomerates of the nanoparticles which can be used as a catalyst support in fuel cell applications. Further, platinum nanoparticles, for example, can be deposited on the agglomerates to provide a material that can be used as both an anode and a cathode catalyst support in a fuel cell.

  13. Basic characteristics of Australian iron ore concentrate and its effects on sinter properties during the high-limonite sintering process

    Science.gov (United States)

    Liu, Dong-hui; Liu, Hao; Zhang, Jian-liang; Liu, Zheng-jian; Xue, Xun; Wang, Guang-wei; Kang, Qing-feng

    2017-09-01

    The basic characteristics of Australian iron ore concentrate (Ore-A) and its effects on sinter properties during a high-limonite sintering process were studied using micro-sinter and sinter pot methods. The results show that the Ore-A exhibits good granulation properties, strong liquid flow capability, high bonding phase strength and crystal strength, but poor assimilability. With increasing Ore-A ratio, the tumbler index and the reduction index (RI) of the sinter first increase and then decrease, whereas the softening interval (Δ T) and the softening start temperature ( T 10%) of the sinter exhibit the opposite behavior; the reduction degradation index (RDI+3.15) of the sinter increases linearly, but the sinter yield exhibits no obvious effects. With increasing Ore-A ratio, the distribution and crystallization of the minerals are improved, the main bonding phase first changes from silico-ferrite of calcium and aluminum (SFCA) to kirschsteinite, silicate, and SFCA and then transforms to 2CaO·SiO2 and SFCA. Given the utilization of Ore-A and the improvement of the sinter properties, the Ore-A ratio in the high-limonite sintering process is suggested to be controlled at approximately 6wt%.

  14. Silicon nitride: A ceramic material with outstanding resistance to thermal shock and corrosion

    Science.gov (United States)

    Huebner, K. H.; Saure, F.

    1983-01-01

    The known physical, mechanical and chemical properties of reaction-sintered silicon nitride are summarized. This material deserves interest especially because of its unusually good resistance to thermal shock and corrosion at high temperatures. Two types are distinguished: reaction-sintered (porous) and hot-pressed (dense) Si3N4. Only the reaction-sintered material which is being produced today in large scale as crucibles, pipes, nozzles and tiles is considered.

  15. Hot isostatic pressing of silicon nitride Sisub3n4 containing zircon, or zirconia and silica

    Science.gov (United States)

    Somiya, S.; Yoshimura, M.; Suzuki, T.; Nishimura, H.

    1980-01-01

    A hydrothermal synthesis apparatus with a 10 KB cylinder was used to obtain a sintered body of silicon nitride. The sintering auxiliary agents used were zircon (ZrSiO4) and a mixture of zirconia (ZrO2) and silica (SiO2). Experiments were conducted with the amounts of ZrSi04 or ArO2 and SiO2 varying over a wide range and the results compared to discover the quantity of additive which produced sintering in silicon nitride by the hot pressing method.

  16. Powder metallurgy: Solid and liquid phase sintering of copper

    Science.gov (United States)

    Sheldon, Rex; Weiser, Martin W.

    1993-01-01

    Basic powder metallurgy (P/M) principles and techniques are presented in this laboratory experiment. A copper based system is used since it is relatively easy to work with and is commercially important. In addition to standard solid state sintering, small quantities of low melting metals such as tin, zinc, lead, and aluminum can be added to demonstrate liquid phase sintering and alloy formation. The Taguchi Method of experimental design was used to study the effect of particle size, pressing force, sintering temperature, and sintering time. These parameters can be easily changed to incorporate liquid phase sintering effects and some guidelines for such substitutions are presented. The experiment is typically carried out over a period of three weeks.

  17. Additive Manufacturing of Dense Hexagonal Boron Nitride Objects

    Energy Technology Data Exchange (ETDEWEB)

    Marquez Rossy, Andres E [ORNL; Armstrong, Beth L [ORNL; Elliott, Amy M [ORNL; Lara-Curzio, Edgar [ORNL

    2017-05-12

    The feasibility of manufacturing hexagonal boron nitride objects via additive manufacturing techniques was investigated. It was demonstrated that it is possible to hot-extrude thermoplastic filaments containing uniformly distributed boron nitride particles with a volume concentration as high as 60% and that these thermoplastic filaments can be used as feedstock for 3D-printing objects using a fused deposition system. Objects 3D-printed by fused deposition were subsequently sintered at high temperature to obtain dense ceramic products. In a parallel study the behavior of hexagonal boron nitride in aqueous solutions was investigated. It was shown that the addition of a cationic dispersant to an azeotrope enabled the formulation of slurries with a volume concentration of boron nitride as high as 33%. Although these slurries exhibited complex rheological behavior, the results from this study are encouraging and provide a pathway for manufacturing hexagonal boron nitride objects via robocasting.

  18. Problems and possibilities of development of boron nitride ceramics

    International Nuclear Information System (INIS)

    Rusanova, L.N.; Romashin, A.G.; Kulikova, G.I.; Golubeva, O.P.

    1988-01-01

    The modern state of developments in the field of technology of ceramics produced from boron nitride is analyzed. Substantial difficulties in production of pure ceramics from hexagonal and wurtzite-like boron nitride are stated as related to the structure peculiarities and inhomogeneity of chemical bonds in elementary crystal cells of various modifications. Advantages and disadvantages of familiar technological procedures in production of boron nitride ceramics are compared. A new technology is suggested, which is based on the use of electroorganic compounds for hardening and protection of porous high-purity boron-nitride die from oxidation, and as high-efficient sintered elements for treatment of powders of various structures and further pyrolisis. The method is called thermal molecular lacing (TML). Properties of ceramics produced by the TML method are compared with characteristics of well-known brands of boron nitride ceramics

  19. Simple process to fabricate nitride alloy powders

    International Nuclear Information System (INIS)

    Yang, Jae Ho; Kim, Dong-Joo; Kim, Keon Sik; Rhee, Young Woo; Oh, Jang-Soo; Kim, Jong Hun; Koo, Yang Hyun

    2013-01-01

    alloy powders were obtained. Two types of the simple thermal treatment procedures were tested to fabricate nitride powders. First, the procedure is a direct nitriding process in which the metal powders were annealed at 1000 deg. C under nitrogen gas and then further annealed at 1500 deg. C under hydrogen containing Ar gas atmosphere. It was revealed that the particles were fragmented to smaller particles during the annealing. The XRD results showed that the uranium metal converted to UN 2 phase during the annealing at 1000 deg. C and then decomposed to UN phase during the further annealing at 1500 deg. C. Observed fragmentation and cracking of particles were caused by sequential volume changes of expansion and contraction which were accompanied by the formation and decomposition of uranium nitrides. Although uranium nitride powders were successfully fabricated during the simple nitriding process, it seems that milling of the obtained powder might be necessary to fabricate sintered nitride fuel pellets. In order to fabricate finer nitride powders, a nitriding procedure has been modified. In the modified process, the particles were heat-treated at 250 deg. C in H 2 before nitriding. The addition of a hydriding step was effective in obtaining fine uranium nitride powder. In the case of U-10 wt% Zr-alloy, however, only a few large cracks were developed on the particle surface and the particle maintained its size. This result reveals that hydriding and nitriding kinetics or mechanisms of U-10 wt% Zr alloy are quite different from those of U metal

  20. Effect of {alpha}-Si{sub 3}N{sub 4} Addition on Sintering of {alpha}-Sialon Powder via Carbonthermal Reduction Nitridation of Boron-rich Slag-based Mixture

    Energy Technology Data Exchange (ETDEWEB)

    Wu Junbin; Jiang Tao; Xue Xiangxin, E-mail: komsae@163.com [School of Materials and Metallurgy, Northeastern University, Shenyang (China)

    2011-10-29

    With boron-rich slag, silica fume, bauxite chalmette, carbon black and {alpha}-Si{sub 3}N{sub 4} as starting materials, {alpha}-Sialon powders were prepared by carbothermal reduction-nitridation(CRN). Different contents of {alpha}-Si{sub 3}N{sub 4} addition were added to investigate the {alpha}-Sialon formation as a function of {alpha}-Si{sub 3}N{sub 4} addition from boron rich slag based mixture fired at 1480 deg. C for 8 h under N{sub 2} flowing of 0.4 L/min. Phase assembly, microstructure of reaction products were determined by X-ray Diffraction and Scanning Electron Microscope. The results showed that the main phases of the samples were a-Sialon, h-BN, AlN and small quantity of SiC. With the increasing amount of the {alpha}-Si{sub 3}N{sub 4} addition, the h-BN content remained in a constant and AlN content was running down steadily, while the {alpha}-Sialon content increased gradually. The aspect ratio and the amount of elongated {alpha}-Sialon grains could be tailored by using different amounts of the {alpha}-Si{sub 3}N{sub 4} addition.

  1. Leaching of metals from fresh and sintered red mud.

    Science.gov (United States)

    Ghosh, Indrani; Guha, Saumyen; Balasubramaniam, R; Kumar, A V Ramesh

    2011-01-30

    The disposal of red mud, a solid waste generated during the extraction of alumina from bauxite, is one of the major problems faced by the aluminum industry. Proper disposal followed by its utilization, for example as bricks, can provide a satisfactory solution to this problem. Pollution potential of red mud and its finished product, due to metals leaching out from them under certain environmental conditions, need to be studied. Sintering of red mud was performed in a resistance type vertical tube furnace to simulate the brick-making conditions in lab-scale. Leachability of metals in red mud and the sintered product was evaluated by performing sequential extraction experiments on both. The metals studied were the 'macro metals' iron and aluminum and the 'trace metals' copper and chromium. The total extractabilities of all the metals estimated by the microwave digestion of red mud samples decreased due to sintering. The leachability in sequential extraction of the macro metals iron and aluminum, on the other hand, increased due to sintering in all phases of sequential extraction. However, the effect of sintering on the leachability of the trace metals by sequential extraction was different for copper and chromium in different fractions of sequential extraction. Copyright © 2010 Elsevier B.V. All rights reserved.

  2. Effect of sintering temperature and heating mode on consolidation of ...

    Indian Academy of Sciences (India)

    sintering of various Al-based composites. Microwave heat- ing of metallic powders (Al–Cu–Fe) to single phase was first reported by Vauchera et al (2008). To the best of our know- ... insulation also consisted of graphite coated SiC rods. Tem- perature ... Figure 3 compares thermal profile for 7775 aluminum alloy compacts ...

  3. Sintering of nonstoichiometric UO2

    International Nuclear Information System (INIS)

    Susnik, D.; Holc, J.

    1983-01-01

    Activated sintering of UO 2 pellets at 1100 deg C is described. In CO 2 atmosphere is UO 2 is nonstoichiometric and pellets from active UO 2 powders sinter at 900 deg C to high density. At 1100 deg C the final sintered density is practically achieved at heating on sintering temperature. After reduction and cooling in H 2 atmosphere which is followed sintering in CO 2 the structure is identical to the structured UO 2 pellets sintered at high temperature in H 2 . Density of activated sintered UO 2 pellets is stable, even after additional sintering at 1800 deg C. (author)

  4. Laser Sintered Calcium Phosphate Bone

    National Research Council Canada - National Science Library

    Vail, Neil

    1999-01-01

    ...) technology selective laser sintering (SLS). BME has successfully implemented a pilot facility to fabricate calcium phosphate implants using anatomical data coupled with the selective laser sintering process...

  5. A method for sintering

    DEFF Research Database (Denmark)

    2012-01-01

    The present invention provides a method for sintering, comprising in the following order the steps of: providing a body in the green state or in the pre-sintered state on a support; providing a load on at least one spacer on the support such that the load is located above said body in the green...

  6. Plasma nitriding of steels

    CERN Document Server

    Aghajani, Hossein

    2017-01-01

    This book focuses on the effect of plasma nitriding on the properties of steels. Parameters of different grades of steels are considered, such as structural and constructional steels, stainless steels and tools steels. The reader will find within the text an introduction to nitriding treatment, the basis of plasma and its roll in nitriding. The authors also address the advantages and disadvantages of plasma nitriding in comparison with other nitriding methods. .

  7. Boron nitride composites

    Science.gov (United States)

    Kuntz, Joshua D.; Ellsworth, German F.; Swenson, Fritz J.; Allen, Patrick G.

    2017-02-21

    According to one embodiment, a composite product includes: a matrix material including hexagonal boron nitride and one or more borate binders; and a plurality of cubic boron nitride particles dispersed in the matrix material. According to another embodiment, a composite product includes: a matrix material including hexagonal boron nitride and amorphous boron nitride; and a plurality of cubic boron nitride particles dispersed in the matrix material.

  8. Micro-Scale Gallium Nitride Pressure Sensors for Advanced Harsh Environment Space Technology

    Data.gov (United States)

    National Aeronautics and Space Administration — The goal of this research is to study the high-temperature response of the 2-dimesional electron gas (2DEG) that occurs at the interface of aluminum gallium nitride...

  9. Piezoelectric aluminum nitride resonator for oscillator.

    Science.gov (United States)

    Mareschal, Olivier; Loiseau, Sébastien; Fougerat, Aurélien; Valbin, Laurie; Lissorgues, Gaëlle; Saez, Sebastien; Dolabdjian, Christophe; Bouregba, Rachid; Poullain, Gilles

    2010-03-01

    This work investigates properties of the thin film elongation acoustic resonator (TFEAR) operating at megahertz frequencies in air. This resonator is composed of a piezoelectric layer of AlN sandwiched between 2 Al electrodes. TFEAR works in the extensional mode excited via AlN d31 piezoelectric coefficient. A 3D finite element method (3D-FEM) analysis using ANSYS software has been performed to model static modal and harmonic behavior of the TFEAR. To consider insertion losses into the substrate, equivalent electrical models based on a modified Butterworth-Van Dyke (MBVD) circuit have been improved by adding extra dissipative elements. Thus, a whole model for the on-wafer characterization setup is given, allowing for automatic de-embedding of the present TFEAR equivalent circuit. Quality factors Q as high as 2500 in air have been recorded with motional resistance lower than 400 ohms. A first oscillator based on a TFEAR resonator was also designed and tested.

  10. Pulsed laser deposition of aluminum nitride nanowires

    Science.gov (United States)

    Yunusova, N. R.; Kargin, N. I.; Ryndya, S. M.; Gusev, A. S.; Antonenko, S. V.; Timofeev, A. A.

    2018-01-01

    The possibility of AlN nanowires deposition on single-crystal silicon substrates by pulsed laser deposition in vacuum is shown in this work. Experimental samples were investigated by scanning electron microscopy and infrared Fourier spectroscopy. It is shown that the possible mechanism for the AlN nanowires formation is the "vapor-liquid-crystal" mechanism.

  11. Sintering of beryllium oxide

    International Nuclear Information System (INIS)

    Caillat, R.; Pointud, R.

    1955-01-01

    This study had for origin to find a process permitting to manufacture bricks of beryllium oxide of pure nuclear grade, with a density as elevated as possible and with standardized shape. The sintering under load was the technique kept for the manufacture of the bricks. Because of the important toxicity of the beryllium oxide, the general features for the preliminary study of the sintering, have been determined while using alumina. The obtained results will be able to act as general indication for ulterior studies with sintering under load. (M.B.) [fr

  12. Development of high-thermal-conductivity silicon nitride ceramics

    Directory of Open Access Journals (Sweden)

    You Zhou

    2015-09-01

    Full Text Available Silicon nitride (Si3N4 with high thermal conductivity has emerged as one of the most promising substrate materials for the next-generation power devices. This paper gives an overview on recent developments in preparing high-thermal-conductivity Si3N4 by a sintering of reaction-bonded silicon nitride (SRBSN method. Due to the reduction of lattice oxygen content, the SRBSN ceramics could attain substantially higher thermal conductivities than the Si3N4 ceramics prepared by the conventional gas-pressure sintering of silicon nitride (SSN method. Thermal conductivity could further be improved through increasing the β/α phase ratio during nitridation and enhancing grain growth during post-sintering. Studies on fracture resistance behaviors of the SRBSN ceramics revealed that they possessed high fracture toughness and exhibited obvious R-curve behaviors. Using the SRBSN method, a Si3N4 with a record-high thermal conductivity of 177 Wm−1K−1 and a fracture toughness of 11.2 MPa m1/2 was developed. Studies on the influences of two typical metallic impurity elements, Fe and Al, on thermal conductivities of the SRBSN ceramics revealed that the tolerable content limits for the two impurities were different. While 1 wt% of impurity Fe hardly degraded thermal conductivity, only 0.01 wt% of Al caused large decrease in thermal conductivity.

  13. In situ Investigation of Titanium Powder Microwave Sintering by Synchrotron Radiation Computed Tomography

    Directory of Open Access Journals (Sweden)

    Yu Xiao

    2016-01-01

    Full Text Available In this study, synchrotron radiation computed tomography was applied to investigate the mechanisms of titanium powder microwave sintering in situ. On the basis of reconstructed images, we observed that the sintering described in this study differs from conventional sintering in terms of particle smoothing, rounding, and short-term growth. Contacted particles were also isolated. The kinetic curves of sintering neck growth and particle surface area were obtained and compared with those of other microwave-sintered metals to examine the interaction mechanisms between mass and microwave fields. Results show that sintering neck growth accelerated from the intermediate period; however, this finding is inconsistent with that of aluminum powder microwave sintering described in previous work. The free surface areas of the particles were also quantitatively analyzed. In addition to the eddy current loss in metal particles, other heating mechanisms, including dielectric loss, interfacial polarization effect, and local plasma-activated sintering, contributed to sintering neck growth. Thermal and non-thermal effects possibly accelerated the sintering neck growth of titanium. This study provides a useful reference of further research on interaction mechanisms between mass and microwave fields during microwave sintering.

  14. Aluminum: Reflective Aluminum Chips

    Energy Technology Data Exchange (ETDEWEB)

    Recca, L.

    1999-01-29

    This fact sheet reveals how the use of reflective aluminum chips on rooftops cuts down significantly on heat absorption, thus decreasing the need for air conditioning. The benefits, including energy savings that could reach the equivalent of 1.3 million barrels of oil annually for approximately 100,000 warehouses, are substantial.

  15. Aluminum Hydroxide

    Science.gov (United States)

    Aluminum hydroxide is used for the relief of heartburn, sour stomach, and peptic ulcer pain and to ... Aluminum hydroxide comes as a capsule, a tablet, and an oral liquid and suspension. The dose and ...

  16. Nitride-Based Materials for Flexible MEMS Tactile and Flow Sensors in Robotics.

    Science.gov (United States)

    Abels, Claudio; Mastronardi, Vincenzo Mariano; Guido, Francesco; Dattoma, Tommaso; Qualtieri, Antonio; Megill, William M; De Vittorio, Massimo; Rizzi, Francesco

    2017-05-10

    The response to different force load ranges and actuation at low energies is of considerable interest for applications of compliant and flexible devices undergoing large deformations. We present a review of technological platforms based on nitride materials (aluminum nitride and silicon nitride) for the microfabrication of a class of flexible micro-electro-mechanical systems. The approach exploits the material stress differences among the constituent layers of nitride-based (AlN/Mo, Si x N y /Si and AlN/polyimide) mechanical elements in order to create microstructures, such as upwardly-bent cantilever beams and bowed circular membranes. Piezoresistive properties of nichrome strain gauges and direct piezoelectric properties of aluminum nitride can be exploited for mechanical strain/stress detection. Applications in flow and tactile sensing for robotics are described.

  17. Investigating Tribological Characteristics of HVOF Sprayed AISI 316 Stainless Steel Coating by Pulsed Plasma Nitriding

    Science.gov (United States)

    Mindivan, H.

    2018-01-01

    In this study, surface modification of aluminum alloy using High-Velocity Oxygen Fuel (HVOF) thermal spray and pulsed plasma nitriding processes was investigated. AISI 316 stainless steel coating on 1050 aluminum alloy substrate by HVOF process was pulsed plasma nitrided at 793 K under 0.00025 MPa pressure for 43200 s in a gas mixture of 75 % N2 and 25 % H2. The results showed that the pulse plasma nitriding process produced a surface layer with CrN, iron nitrides (Fe3N, Fe4N) and expanded austenite (γN). The pulsed plasma nitrided HVOF-sprayed coating showed higher surface hardness, lower wear rate and coefficient of friction than the untreated HVOF-sprayed one.

  18. Nitride-Based Materials for Flexible MEMS Tactile and Flow Sensors in Robotics

    Science.gov (United States)

    Abels, Claudio; Mastronardi, Vincenzo Mariano; Guido, Francesco; Dattoma, Tommaso; Qualtieri, Antonio; Megill, William M.; De Vittorio, Massimo; Rizzi, Francesco

    2017-01-01

    The response to different force load ranges and actuation at low energies is of considerable interest for applications of compliant and flexible devices undergoing large deformations. We present a review of technological platforms based on nitride materials (aluminum nitride and silicon nitride) for the microfabrication of a class of flexible micro-electro-mechanical systems. The approach exploits the material stress differences among the constituent layers of nitride-based (AlN/Mo, SixNy/Si and AlN/polyimide) mechanical elements in order to create microstructures, such as upwardly-bent cantilever beams and bowed circular membranes. Piezoresistive properties of nichrome strain gauges and direct piezoelectric properties of aluminum nitride can be exploited for mechanical strain/stress detection. Applications in flow and tactile sensing for robotics are described. PMID:28489040

  19. Morphological analysis and modelling of sintering and of sintered materials

    International Nuclear Information System (INIS)

    Jernot, Jean-Paul

    1982-01-01

    This research thesis addresses the study of solid phase sintering of metallic powders, and aims at describing as precisely as possible the different involved matter transport mechanisms, first by using a thermodynamic approach to sintering. Sintering diagrams are also used to determine prevailing mechanisms. The microstructure of sintered materials has been studied by using image quantitative analysis, thus by using a morphological approach to sintering. Morphological parameters allow, on the one hand, the evolution of powders during sintering to be followed, and, on the other hand, sintered products to be correctly characterised. Moreover, the author reports the study of the evolution of some physical properties of sintered materials with respect to their microstructure parameters. This leads to the development of a modelling of the behaviour of these materials [fr

  20. Continuous Fiber Ceramic Composite (CFCC) Program: Gaseous Nitridation

    Energy Technology Data Exchange (ETDEWEB)

    R. Suplinskas G. DiBona; W. Grant

    2001-10-29

    Textron has developed a mature process for the fabrication of continuous fiber ceramic composite (CFCC) tubes for application in the aluminum processing and casting industry. The major milestones in this project are System Composition; Matrix Formulation; Preform Fabrication; Nitridation; Material Characterization; Component Evaluation

  1. Sintering of Synroc D

    International Nuclear Information System (INIS)

    Robinson, G.

    1982-01-01

    Sintering has been investigated as a method for the mineralization and densification of high-level nuclear defense waste powder. Studies have been conducted on Synroc D composite powder LS04. Optimal densification has been found to be highly dependent on the characteristics of the starting material. Powder subjected to milling, which was believed to reduce the level of agglomeration and possibly particle size, was found to densify better than powder not subjected to this milling. Densities of greater than 95% of theoretical could be achieved for samples sintered at 1150 to 1200 0 C. Mineralogy was found to be as expected for Synroc D for samples sintered in a CO 2 /CO atmosphere where the Fe +2 /Fe +3 ratio was maintained at 1.0 to 5.75. In a more oxidizing, pure CO 2 atmosphere a new phase, not previously identified in Synroc D, was found

  2. Crystalline boron nitride aerogels

    Energy Technology Data Exchange (ETDEWEB)

    Zettl, Alexander K.; Rousseas, Michael; Goldstein, Anna P.; Mickelson, William; Worsley, Marcus A.; Woo, Leta

    2017-12-12

    This disclosure provides methods and materials related to boron nitride aerogels. For example, one aspect relates to a method for making an aerogel comprising boron nitride, comprising: (a) providing boron oxide and an aerogel comprising carbon; (b) heating the boron oxide to melt the boron oxide and heating the aerogel; (c) mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide; and (d) converting at least a portion of the carbon to boron nitride to obtain the aerogel comprising boron nitride. Another aspect relates to a method for making an aerogel comprising boron nitride, comprising heating boron oxide and an aerogel comprising carbon under flow of a nitrogen-containing gas, wherein boron oxide vapor and the nitrogen-containing gas convert at least a portion of the carbon to boron nitride to obtain the aerogel comprising boron nitride.

  3. Processing of Silicon Nitride Ceramics from Concentrated Aqueous Suspensions by Robocasting

    Energy Technology Data Exchange (ETDEWEB)

    HE,GUOPING; HIRSCHFELD,DEIDRE A.; CESARANO III,JOSEPH; STUECKER,JOHN N.

    2000-08-14

    The optimization of concentrated AlliedSignal GS-44 silicon nitride aqueous slurries for robocasting was investigated. The dispersion mechanisms of GS-44 Si{sub 3}N{sub 4} aqueous suspensions with and without polyacrylate were analyzed. The zero point of charge (ZPC) was at about pH 6. Well-dispersed GS-44 suspensions were obtained in the pH range from 7 to 11 by the addition of Darvan 821A. The influence of pH, amount of Darvan 821A and solids loading on the theological behavior of GS-44 aqueous suspensions was determined. A coagulant, aluminum nitrate, was used to control the yield stress and shear thinning behavior of highly loaded Si{sub 3}N{sub 4} slurries. Homogeneous and stable suspensions of 52 vol% GS-44 Si{sub 3}N{sub 4} were robocast successfully at pH 7.8 to pH 8.5. The sintering process, mechanical properties and microstructural characteristics of robocast GS-44 bars were determined.

  4. SinterHab

    Science.gov (United States)

    Rousek, Tomáš; Eriksson, Katarina; Doule, Ondřej

    2012-05-01

    This project describes a design study for a core module on a Lunar South Pole outpost, constructed by 3D printing technology with the use of in-situ resources and equipped with a bio-regenerative life support system. The module would be a hybrid of deployable (CLASS II) and in-situ built (CLASS III) structures. It would combine deployable membrane structures and pre-integrated rigid elements with a sintered regolith shell for enhanced radiation and micrometeorite shielding. The closed loop ecological system would support a sustainable presence on the Moon with particular focus on research activities. The core module accommodates from four to eight people, and provides laboratories as a test bed for development of new lunar technologies directly in the environment where they will be used. SinterHab also includes an experimental garden for development of new bio-regenerative life support system elements. The project explores these various concepts from an architectural point-of-view particularly, as they constitute the building, construction and interior elements. The construction method for SinterHab is based on 3D printing by sintering of the lunar regolith. Sinterator robotics 3D printing technology proposed by NASA JPL enables construction of future generations of large lunar settlements with little imported material and the use of solar energy. The regolith is processed, placed and sintered by the Sinterator robotics system which combines the NASA ATHLETE and the Chariot remotely controlled rovers. Microwave sintering creates a rigid structure in the form of walls, vaults and other architectural elements. The interior is coated with a layer of inflatable membranes inspired by the TransHab project. The life-support system is mainly bio-regenerative and several parts of the system are intrinsically multifunctional and serve more than one purpose. The plants for food production are also an efficient part of atmosphere revitalization and water treatment. Moreover

  5. Colloidal characterization of silicon nitride and silicon carbide

    Science.gov (United States)

    Feke, Donald L.

    1986-01-01

    The colloidal behavior of aqueous ceramic slips strongly affects the forming and sintering behavior and the ultimate mechanical strength of the final ceramic product. The colloidal behavior of these materials, which is dominated by electrical interactions between the particles, is complex due to the strong interaction of the solids with the processing fluids. A surface titration methodology, modified to account for this interaction, was developed and used to provide fundamental insights into the interfacial chemistry of these systems. Various powder pretreatment strategies were explored to differentiate between true surface chemistry and artifacts due to exposure history. The colloidal behavior of both silicon nitride and carbide is dominated by silanol groups on the powder surfaces. However, the colloid chemistry of silicon nitride is apparently influenced by an additional amine group. With the proper powder treatments, silicon nitride and carbide powder can be made to appear colloidally equivalent. The impact of these results on processing control will be discussed.

  6. Mineral Phases and Release Behaviors of As in the Process of Sintering Residues Containing As at High Temperature

    Directory of Open Access Journals (Sweden)

    Xingrun Wang

    2014-01-01

    Full Text Available To investigate the effect of sintering temperature and sintering time on arsenic volatility and arsenic leaching in the sinter, we carried out experimental works and studied the structural changes of mineral phases and microstructure observation of the sinter at different sintering temperatures. Raw materials were shaped under the pressure of 10 MPa and sintered at 1000~1350°C for 45 min with air flow rate of 2000 mL/min. The results showed that different sintering temperatures and different sintering times had little impact on the volatilization of arsenic, and the arsenic fixed rate remained above 90%; however, both factors greatly influenced the leaching concentration of arsenic. Considering the product’s environmental safety, the best sintering temperature was 1200°C and the best sintering time was 45 min. When sintering temperature was lower than 1000°C, FeAsS was oxidized into calcium, aluminum, and iron arsenide, mainly Ca3(AsO42 and AlAsO4, and the arsenic leaching was high. When it increased to 1200°C, arsenic was surrounded by a glass matrix and became chemically bonded inside the matrix, which lead to significantly lower arsenic leaching.

  7. Influence of spark plasma sintering conditions on the sintering and functional properties of an ultra-fine grained 316L stainless steel obtained from ball-milled powder

    Energy Technology Data Exchange (ETDEWEB)

    Keller, C., E-mail: clement.keller@insa-rouen.fr [Groupe de Physique des Matériaux, CNRS-UMR 6634, Université de Rouen, INSA de Rouen, Avenue de l' Université, 76800 Saint-Etienne du Rouvray (France); Tabalaiev, K.; Marnier, G. [Groupe de Physique des Matériaux, CNRS-UMR 6634, Université de Rouen, INSA de Rouen, Avenue de l' Université, 76800 Saint-Etienne du Rouvray (France); Noudem, J. [Laboratoire de Cristallographie des Matériaux, CNRS-UMR 6508, Université de Caen, ENSICAEN, 7 bd du Maréchal Juin, 14050 Caen (France); Sauvage, X. [Groupe de Physique des Matériaux, CNRS-UMR 6634, Université de Rouen, INSA de Rouen, Avenue de l' Université, 76800 Saint-Etienne du Rouvray (France); Hug, E. [Laboratoire de Cristallographie des Matériaux, CNRS-UMR 6508, Université de Caen, ENSICAEN, 7 bd du Maréchal Juin, 14050 Caen (France)

    2016-05-17

    In this work, 316L samples with submicrometric grain size were sintered by spark plasma sintering. To this aim, 316L powder was first ball-milled with different conditions to obtain nanostructured powder. The process control agent quantity and milling time were varied to check their influence on the crystallite size of milled powder. Samples were then sintered by spark plasma sintering using different sets of sintering parameters (temperature, dwell time and pressure). For each sample, grain size and density were systematically measured in order to investigate the influence of the sintering process on these two key microstructure parameters. Results show that suitable ball-milling and subsequent sintering can be employed to obtain austenitic stainless steel samples with grain sizes in the nanometer range with porosity lower than 3%. However, ball-milling and subsequent sintering enhance chromium carbides formation at the sample surface in addition to intragranular and intergranular oxides in the sample as revealed by X-ray diffraction and transmission electron microscopy. It has been shown that using Boron nitride together with graphite foils to protect the mold from powder welding prevent such carbide formation. For mechanical properties, results show that the grain size refinement strongly increases the hardness of the samples without deviation from Hall-Petch relationship despite the oxides formation. For corrosion resistance, grain sizes lower than a few micrometers involve a strong decrease in the pitting potential and a strong increase in passivation current. As a consequence, spark plasma sintering can be considered as a promising tool for ultra-fine grained austenitic stainless steel.

  8. Methods for improved growth of group III nitride buffer layers

    Science.gov (United States)

    Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

    2014-07-15

    Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphology of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).

  9. Methods of forming boron nitride

    Science.gov (United States)

    Trowbridge, Tammy L; Wertsching, Alan K; Pinhero, Patrick J; Crandall, David L

    2015-03-03

    A method of forming a boron nitride. The method comprises contacting a metal article with a monomeric boron-nitrogen compound and converting the monomeric boron-nitrogen compound to a boron nitride. The boron nitride is formed on the same or a different metal article. The monomeric boron-nitrogen compound is borazine, cycloborazane, trimethylcycloborazane, polyborazylene, B-vinylborazine, poly(B-vinylborazine), or combinations thereof. The monomeric boron-nitrogen compound is polymerized to form the boron nitride by exposure to a temperature greater than approximately 100.degree. C. The boron nitride is amorphous boron nitride, hexagonal boron nitride, rhombohedral boron nitride, turbostratic boron nitride, wurzite boron nitride, combinations thereof, or boron nitride and carbon. A method of conditioning a ballistic weapon and a metal article coated with the monomeric boron-nitrogen compound are also disclosed.

  10. Liquid phase sintered SiC. Processing and transformation controlled microstructure tailoring

    Directory of Open Access Journals (Sweden)

    V.A. Izhevskyi

    2000-10-01

    Full Text Available Microstructure development and phase formation processes during sintering of silicon carbide based materials with AlN-Y2O3, AlN-Yb2O3, and AlN-La2O3 sintering additives were investigated. Densification of the materials occurred by liquid-phase sintering mechanism. Proportion of alpha- and beta-SiC powders in the initial mixtures was a variable parameter, while the molar ratio of AlN/RE2O3, and the total amount of additives (10 vol. % were kept constant. Shrinkage behavior during sintering in interrelation with the starting composition of the material and the sintering atmosphere was investigated by high temperature dilatometry. Kinetics of b-SiC to a-SiC phase transformation during post-sintering heat treatment at temperatures 1900-1950 °C was studied, the degree of phase transformation being determined by quantitative x-ray analysis using internal standard technique. Evolution of microstructure resulting from beta-SiC to alpha-SiC transformation was followed up by scanning electron microscopy on polished and chemically etched samples. Transformation-controlled grain growth mechanism similar to the one observed for silicon nitride based ceramics was established. Possibility of in-situ platelet reinforced dense SiC-based ceramics fabrication with improved mechanical properties by means of sintering was shown.

  11. Effects of heat treatments on surface roughness of silicon nitride ceramics

    International Nuclear Information System (INIS)

    Nakano, T.; Kinemuchi, Y.; Ishizaki, K.

    1999-01-01

    Silicon nitride ceramics were sintered by Pulsed Electric Current Sintering (PECS) method. Sintered Si 3 N 4 bodies were coated by copper, and heat treated at 1200 deg C for 1 hour in air. After the Cu coating and heat treatment, the ground Si 3 N 4 surface was oxidized, its duration was calculated from intensities obtained by an Electron Probe Micro Analyzer. The oxidized surfaces became smoother by heat treatment as the Cu coating period increases. The oxidation for smoothening treatments of silicon nitride ceramics requires the eutectic mixture of copper oxide and silicon oxide formed by the heat treatment on the ground surface covered by Cu before the treatment. Less nitrogen atoms on the Si 3 N 4 surface is necessary in order to smoothen the Si 3 N 4 surface. Copyright (1999) AD-TECH - International Foundation for the Advancement of Technology Ltd

  12. Sintering of B4C by pressureless liquid phase sintering

    International Nuclear Information System (INIS)

    Rocha, Rosa Maria da; Melo, Francisco Cristovao Lourenco de

    2009-01-01

    The effect of three different sintering additive systems on densification of boron carbide powder was investigated. The sintering additives were Al 2 O 3 :Y 2 O 3 , AlN:Y 2 O 3 and BN:Y 2 O 3 compositions. Powder mixtures were prepared with 10 vol% of sintering aids following conventional powder technology processes. Samples were sintered by pressureless sintering at 2050 deg C/30min in argon atmosphere. Sintered samples were compared to a sintered B 4 C without sintering additive. Samples were characterized by XRD to analyze the crystalline phases after sintering and SEM to observe the microstructure and the second phase distribution. YB 4 and YB 2 C 2 were identified in all samples, indicating a reaction between Y 2 O 3 , B 4 C and B 2 O 3 present at the B 4 C particle surface. The best densification result was achieved with Al 2 O 3 :Y 2 O 3 additive system, showing 92.0 % of theoretical density, low porosity and 15.2 % of linear shrinkage. But this sample showed the highest weight loss. (author)

  13. Sintering techniques for microstructure control in ceramics

    Science.gov (United States)

    Rosenberger, Andrew T.

    during sintering on microstructure and electronic properties of lithium aluminum titanium phosphate (LATP) electrolyte material was investigated by sintering LATP pellets under DC voltages of 0V, 2V, 10V, and 20V. Application of a DC voltage increased relative density from 86% to a maximum of 95.5%. However, unlike reports on other material systems such as zirconia, a high DC voltage induced, rather than restrained, abnormal grain growth. Conductivity decreased with applied voltage from 4.8*10 -4 S/cm at 0V to 1.3*10-4 S/cm at 20V, which was attributed to the high faceting and poor grain-to-grain contact of the grains sintered under 10V and 20V. This indicates that field-assisted sintering techniques may actually be detrimental to solid state battery materials, and that the field effects are significantly different from those observed in other systems in the literature.

  14. Direct bonding of ALD Al2O3 to silicon nitride thin films

    DEFF Research Database (Denmark)

    Laganà, Simone; Mikkelsen, E. K.; Marie, Rodolphe

    2017-01-01

    microscopy (TEM) by improving low temperature annealing bonding strength when using atomic layer deposition of aluminum oxide. We have investigated and characterized bonding of Al2O3-SixNy (low stress silicon rich nitride) and Al2O3-Si3N4 (stoichiometric nitride) thin films annealed from room temperature up......, the current bonding method can be also used for further MEMS applications. ...

  15. Relation between microstructure and thermal conductivity in aluminium nitride substrates; Relations entre la microstructure et la conductivite thermique dans les substrats de nitrure d`aluminium

    Energy Technology Data Exchange (ETDEWEB)

    Jarrige, J.; Lecompte, J.P.; Seck, O. [Faculte des Sciences (CNRS), 87 - Limoges (France). Laboratoire de Materiaux Ceramiques et Traitements de Surface

    1996-12-31

    Sintered aluminium nitride is a promising ceramic substrate for future power electronics applications. This ceramic is characterized by a high thermal conductivity (100 to 200 W/m.K) which depends on two main factors: the oxygen content of the AlN powder used for the sintering process and the microstructure of the sintered material. The oxygen content changes with sintering additions. For instance, boron nitride allows the diffusion of oxygen from the nitride grains to the grain joints. With a complement of yttrium oxide in the liquid phase, the BN/Y{sub 2}O{sub 3} couple allows to increase the conductivity to 190 W/m.K with a reduction of the oxygen content. The second part of the study concerns the microstructure of sintered materials. A control of conductivity can be obtained using an adjustment of the sintering cycles. Only two types of microstructure, the secondary phase dispersed in the AlN matrix and the secondary phase that concentrates around triple junctions, allow a better contact between nitride grains and thus higher conductivities of 210 W/m.K. (J.S.) 6 refs.

  16. Boric oxide or boric acid sintering aid for sintering ceramics

    International Nuclear Information System (INIS)

    Lawler, H.A.

    1979-01-01

    The invention described relates to the use of liquid sintering aid in processes involving sintering of ceramic materials to produce dense, hard articles having industrial uses. Although the invention is specifically discussed in regard to compositions containing silicon carbide as the ceramic material, other sinterable carbides, for example, titanium carbide, may be utilized as the ceramic material. A liquid sintering aid for densifying ceramic material is selected from solutions of H 3 BO 3 , B 2 O 3 and mixtures of these solutions. In sintering ceramic articles, e.g. silicon carbide, a shaped green body is formed from a particulate ceramic material and a resin binder, and the green body is baked at a temperature of 500 to 1000 0 C to form a porous body. The liquid sintering aid of B 2 O 3 and/or H 3 BO 3 is then dispersed through the porous body and the treated body is sintered at a temperature of 1900 to 2200 0 C to produce the sintered ceramic article. (U.K.)

  17. Sintering of magnesia: effect of additives

    Indian Academy of Sciences (India)

    % was studied on the sinter- ing and microstructural developments of the chemically pure magnesia using the pressureless sintering technique between 1500 and 1600◦C. Sintering was evaluated by per cent densification and microstructural ...

  18. Ion nitriding of aluminium

    International Nuclear Information System (INIS)

    Fitz, T.

    2002-09-01

    The present study is devoted to the investigation of the mechanism of aluminium nitriding by a technique that employs implantation of low-energy nitrogen ions and diffusional transport of atoms. The nitriding of aluminium is investigated, because this is a method for surface modification of aluminium and has a potential for application in a broad spectrum of fields such as automobile, marine, aviation, space technologies, etc. However, at present nitriding of aluminium does not find any large scale industrial application, due to problems in the formation of stoichiometric aluminium nitride layers with a sufficient thickness and good quality. For the purposes of this study, ion nitriding is chosen, as an ion beam method with the advantage of good and independent control over the process parameters, which thus can be related uniquely to the physical properties of the resulting layers. Moreover, ion nitriding has a close similarity to plasma nitriding and plasma immersion ion implantation, which are methods with a potential for industrial application. (orig.)

  19. Aluminum Analysis.

    Science.gov (United States)

    Sumrall, William J.

    1998-01-01

    Presents three problems based on the price of aluminum designed to encourage students to be cooperative and to use an investigative approach to learning. Students collect and synthesize information, analyze results, and draw conclusions. (AIM)

  20. Effect of Bed Temperature on the Laser Energy Required to Sinter Copper Nanoparticles

    Science.gov (United States)

    Roy, N. K.; Dibua, O. G.; Cullinan, M. A.

    2018-03-01

    Copper nanoparticles (NPs), due to their high electrical conductivity, low cost, and easy availability, provide an excellent alternative to other metal NPs such as gold, silver, and aluminum in applications ranging from direct printing of conductive patterns on metal and flexible substrates for printed electronics applications to making three-dimensional freeform structures for interconnect fabrication for chip-packaging applications. Lack of research on identification of optimum sintering parameters such as fluence/irradiance requirements for sintering of Cu NPs serves as the primary motivation for this study. This article focuses on the identification of a good sintering irradiance window for Cu NPs on an aluminum substrate using a continuous wave (CW) laser. The study also includes the comparison of CW laser sintering irradiance windows obtained with substrates at different initial temperatures. The irradiance requirements for sintering of Cu NPs with the substrate at 150-200°C were found to be 5-17 times smaller than the irradiance requirements for sintering with the substrate at room temperature. These findings were also compared against the results obtained with a nanosecond (ns) laser and a femtosecond (fs) laser.

  1. Laser sintering of copper nanoparticles

    International Nuclear Information System (INIS)

    Zenou, Michael; Saar, Amir; Ermak, Oleg; Kotler, Zvi

    2014-01-01

    Copper nanoparticle (NP) inks serve as an attractive potential replacement to silver NP inks in functional printing applications. However their tendency to rapidly oxidize has so far limited their wider use. In this work we have studied the conditions for laser sintering of Cu-NP inks in ambient conditions while avoiding oxidation. We have determined the regime for stable, low-resistivity copper (< ×3 bulk resistivity value) generation in terms of laser irradiance and exposure duration and have indicated the limits on fast processing. The role of pre-drying conditions on sintering outcome has also been studied. A method, based on spectral reflectivity measurements, was used for non-contact monitoring of the sintering process evolution. It also indicates preferred spectral regions for sintering. Finally, we illustrated how selective laser sintering can generate high-quality, fine line (<5 µm wide) and dense copper circuits. (paper)

  2. Zirconium carbonitride pellets by internal sol gel and spark plasma sintering as inert matrix fuel material

    Science.gov (United States)

    Hedberg, Marcus; Cologna, Marco; Cambriani, Andrea; Somers, Joseph; Ekberg, Christian

    2016-10-01

    Inert matrix fuel is a fuel type where the fissile material is blended with a solid diluent material. In this work zirconium carbonitride microspheres have been produced by internal sol gel technique, followed by carbothermal reduction. Material nitride purities in the produced materials ranged from Zr(N0.45C0.55) to Zr(N0.74C0.26) as determined by X-ray diffraction and application of Vegard's law. The zirconium carbonitride microspheres have been pelletized by spark plasma sintering (SPS) and by conventional cold pressing and sintering. In all SPS experiments cohesive pellets were formed. Maximum final density reached by SPS at 1700 °C was 87% theoretical density (TD) compared to 53% TD in conventional sintering at 1700 °C. Pore sizes in all the produced pellets were in the μm scale and no density gradients could be observed by computer tomography.

  3. Boron Nitride Nanotubes

    Science.gov (United States)

    Smith, Michael W. (Inventor); Jordan, Kevin (Inventor); Park, Cheol (Inventor)

    2012-01-01

    Boron nitride nanotubes are prepared by a process which includes: (a) creating a source of boron vapor; (b) mixing the boron vapor with nitrogen gas so that a mixture of boron vapor and nitrogen gas is present at a nucleation site, which is a surface, the nitrogen gas being provided at a pressure elevated above atmospheric, e.g., from greater than about 2 atmospheres up to about 250 atmospheres; and (c) harvesting boron nitride nanotubes, which are formed at the nucleation site.

  4. Models of current sintering

    Science.gov (United States)

    Angst, Sebastian; Engelke, Lukas; Winterer, Markus; Wolf, Dietrich E.

    2017-06-01

    Densification of (semi-)conducting particle agglomerates with the help of an electrical current is much faster and more energy efficient than traditional thermal sintering or powder compression. Therefore, this method becomes more and more common among experimentalists, engineers, and in industry. The mechanisms at work at the particle scale are highly complex because of the mutual feedback between current and pore structure. This paper extends previous modelling approaches in order to study mixtures of particles of two different materials. In addition to the delivery of Joule heat throughout the sample, especially in current bottlenecks, thermoelectric effects must be taken into account. They lead to segregation or spatial correlations in the particle arrangement. Various model extensions are possible and will be discussed.

  5. Production of pure sintered alumina

    International Nuclear Information System (INIS)

    Rocha, J.C. da; Huebner, H.W.

    1982-01-01

    With the aim of optimizing the sintering parameters, the strength of a large number of alumina samples was determined which were produced under widely varying sintering conditions and with different amounts of MgO content. The strength as a function of sintering time or temperature was found to go through a maximum. With increasing time, this maximum is shifted to lower temperatures, and with decreasing temperature to longer times. Data pairs of sintering times and temperatures which yeld the strength maximum were determined. The value of the strength at the maximum remains unchanged. The strength is high (= 400 MN/m 2 , at a grain size of 3 um and a porosity of 2 per cent) and comparable to foreign aluminas produced for commercial purposes, or even higher. The increase in the sintering time from 1 h to 16 h permits a reduction of the sintering temperature from 1600 to 1450 0 C without losing strength. The practical importance of this fact for a production of sintered alumina on a large scale is emphasized. (Author) [pt

  6. Processing development for ceramic structural components: the influence of a presintering of silicon on the final properties of reaction bonded silicon nitride. Final technical report

    Energy Technology Data Exchange (ETDEWEB)

    1982-03-01

    The influence of a presintering of silicon on the final properties of reaction bonded silicon nitride has been studied using scanning electron and optical microscopy, x-ray diffraction analysis, 4 pt. bend test, and mecury intrusion porosimetry. It has been shown that presintering at 1050/sup 0/C will not affect the final nitrided properties. At 1200/sup 0/C, the oxide layer is removed, promoting the formation of B-phase silicon nitride. Presintering at 1200/sup 0/C also results in compact weight loss due to the volatilization of silicon, and the formation of large pores which severely reduce nitrided strength. The development of the structure of sintered silicon compacts appears to involve a temperature gradient, with greater sintering observed near the surface.

  7. Nd:YAG transparent ceramics fabricated by direct cold isostatic pressing and vacuum sintering

    Science.gov (United States)

    Ge, Lin; Li, Jiang; Zhou, Zhiwei; Liu, Binglong; Xie, Tengfei; Liu, Jing; Kou, Huamin; Shi, Yun; Pan, Yubai; Guo, Jingkun

    2015-12-01

    The sintering behavior of neodymium doped yttrium aluminum garnet (Nd:YAG) ceramics was investigated on the basis of densification trajectory, microstructure evolution and transmittance. Nd:YAG ceramics with in-line transmittance of 83.9% at 1064 nm and 82.5% at 400 nm were obtained by direct cold isostatic pressing (CIP) at 250 MPa and solid-state reactive sintering at 1790 °C for 30 h under vacuum. Compared with the porosity and the average pore diameter of the sample from uniaxial dry-pressing followed by CIP, those from direct CIP are much smaller. The samples pressed at 250 MPa were sintered from 1500 °C to 1750 °C for 0.5-20 h to study their sintering behavior. At the temperature higher than 1500 °C, pure YAG phase is formed, followed by the densification and grain growth process. The relative density and the grain size increase with the increase of sintering time and temperature, and the sintering behavior is more sensitive to temperature than holding time. The mechanism controlling densification and grain growth at sintering temperature of 1550 °C is grain boundary diffusion.

  8. Fiscal Year 2011 Director’s Strategic Initiative Final Report Heterogeneous Device Architectures Incorporating Nitride Semiconductors for Enhanced Functionality of Optoelectronic Devices

    Science.gov (United States)

    2014-03-01

    from the UV (200 nm) to the IR (1800 nm) by varying the alloy composition from aluminum nitride (AlN) (6.1 eV) to 2 gallium nitride (GaN) (3.4 eV...the significantly larger breakdown field of AlN over SiC (approximately 6 times) implies that aluminum gallium nitride (AlGaN)-based deep UV (DUV...challenges that are unlike traditional heterojunction APDs such as indium gallium arsenide /indium phosphorous (InGaAs/InP) telecommunications devices

  9. CHARACTERIZATION OF NEW TOOL STEEL FOR ALUMINUM EXTRUSION DIES

    Directory of Open Access Journals (Sweden)

    José Britti Bacalhau

    2014-06-01

    Full Text Available Aluminum extrusion dies are an important segment of application on industrial tools steels, which are manufactured in steels based on AISI H13 steel. The main properties of steels applied to extrusion dies are: wear resistance, impact resistance and tempering resistance. The present work discusses the characteristics of a newly developed hot work steel to be used on aluminum extrusion dies. The effects of Cr and Mo contents with respect to tempering resistance and the Al addition on the nitriding response have been evaluated. From forged steel bars, Charpy impact test and characterization via EPMA have been conducted. The proposed contents of Cr, Mo, and Al have attributed to the new VEX grade a much better tempering resistance than H13, as well as a deeper and harder nitrided layer. Due to the unique characteristics, this new steel provides an interesting alternative to the aluminum extrusion companies to increase their competitiveness.

  10. Properties of minor actinide nitrides

    International Nuclear Information System (INIS)

    Takano, Masahide; Itoh, Akinori; Akabori, Mitsuo; Arai, Yasuo; Minato, Kazuo

    2004-01-01

    The present status of the research on properties of minor actinide nitrides for the development of an advanced nuclear fuel cycle based on nitride fuel and pyrochemical reprocessing is described. Some thermal stabilities of Am-based nitrides such as AmN and (Am, Zr)N were mainly investigated. Stabilization effect of ZrN was cleary confirmed for the vaporization and hydrolytic behaviors. New experimental equipments for measuring thermal properties of minor actinide nitrides were also introduced. (author)

  11. Metal Nitrides for Plasmonic Applications

    DEFF Research Database (Denmark)

    Naik, Gururaj V.; Schroeder, Jeremy; Guler, Urcan

    2012-01-01

    Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications.......Metal nitrides as alternatives to metals such as gold could offer many advantages when used as plasmonic material. We show that transition metal nitrides can replace metals providing equally good optical performance for many plasmonic applications....

  12. Elastic properties of indium nitrides grown on sapphire substrates determined by nano-indentation: In comparison with other nitrides

    Directory of Open Access Journals (Sweden)

    Ichiro Yonenaga

    2015-07-01

    Full Text Available The hardness of wurtzite indium nitride (α-InN films of 0.5 to 4 μm in thickness was measured by the nano-indentation method at room temperature. After investigation of crystalline quality by x-ray diffraction, the hardness and Young’s modulus were determined to be 8.8 ± 0.4 and 184 ± 5 GPa, respectively, for the In (0001- and N ( 000 1 ̄ -growth faces of InN films. The bulk and shear moduli were then derived to be 99 ± 3 and 77 ± 2 GPa, respectively. The Poisson’s ratio was evaluated to be 0.17 ± 0.03. The results were examined comprehensively in comparison with previously reported data of InN as well as those of other nitrides of aluminum nitride and gallium nitride. The underlying physical process determining the moduli and hardness was examined in terms of atomic bonding and dislocation energy of the nitrides and wurtzite zinc oxide.

  13. The sintering of nitrogen ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Hampshire, S.

    1986-01-01

    The mechanism of densification with oxide additives and the role of the ..cap alpha..-BETA phase transformation is investigated in a detailed kinetic study. Selected compositions in the Si-Al-O-N system are detailed, with and without additives. Although the work is mainly concerned with the identification of the mechanisms of sintering, some property measurements on a sintered BETA-sialon are reported and the feasibility of preparing pure ..cap alpha..-sialon phases is explored.

  14. Nitriding of high temperature alloys

    International Nuclear Information System (INIS)

    Kiparisov, S.S.; Levinskii, Yu.V.

    This book reviews the nitriding of refractory metals (Ti, Zr, Hf, V, Nb, Ta, Cr, Mo, W) and the mechanism involved in this process. Particular attention is paid to the diffusion aspects of nitriding. Application of nitriding to technological processes is also treated. Characteristics of solid solutions and phases in refractory metal-nitrogen systems are mentioned in the text

  15. Grain growth control and transparency in spark plasma sintered self-doped alumina materials

    International Nuclear Information System (INIS)

    Suarez, M.; Fernandez, A.; Menendez, J.L.; Torrecillas, R.

    2009-01-01

    Doping alumina particles with aluminum alkoxides allows dense spark plasma sintered (SPSed) materials to be obtained that have a refined grain size compared to pure materials, which is critical for their transparency. An optical model considering pore and grain size distributions has been developed to obtain information about porosity in dense materials. This work suggests that the atomic diffusion mechanisms do not depend on the sintering technique. A reduction in the activation energy by a factor of 2 has been found in SPSed materials.

  16. Sintering behavior, microstructure and mechanical properties of vacuum sintered SiC/spinel nanocomposite

    Energy Technology Data Exchange (ETDEWEB)

    Li, Guoqiang, E-mail: lguoqi1@lsu.edu [Department of Mechanical and Industrial Engineering, Louisiana State University, Baton Rouge, LA 70803 (United States); Department of Mechanical Engineering, Southern University, Baton Rouge, LA 70813 (United States); Tavangarian, Fariborz [Department of Mechanical and Industrial Engineering, Louisiana State University, Baton Rouge, LA 70803 (United States)

    2014-12-05

    Highlights: • Bulk SiC/spinel nanocomposite was synthesized from talc, aluminum and graphite powders. • Sintering behavior and mechanical properties of SiC/spinel nanocomposite was studied. • The obtained bulk SiC/spinel nanocomposite had a mean crystallite size of about 34 nm. - Abstract: A mixture of SiC and spinel (MgAl{sub 2}O{sub 4}) nanopowder was prepared through the ball milling of talc, aluminum and graphite powder. The powder was uniaxially pressed into the form of pellets and the prepared specimens were annealed at various temperatures for different holding times. The prepared samples were investigated through X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), transmission electron microscopy (TEM), nanoindentation test, cold crushing strength (CCS) test and Archimedes principle test. The obtained results showed that the hardness, CCS and bulk density did not follow the same trend at different temperatures due to the interaction among various parameters. The detailed investigation of microstructure, phase changes and experimental conditions revealed the mechanisms behind these behaviors. The best sample obtained after annealing at 1200 °C for 1 h in vacuum had the mean hardness of 1.6 GPa and the mean CCS of 118 MPa.

  17. Mechanical behaviour and failure phenomenon of an in situ toughened silicon nitride

    Science.gov (United States)

    Salem, J. A.; Choi, S. R.; Freedman, M. R.; Jenkins, M. G.

    1992-01-01

    The Weibull modulus, fracture toughness and crack growth resistance of an in-situ toughened, silicon nitride material used to manufacture a turbine combustor were determined from room temperature to 1371 C. The material exhibited an elongated grain structure that resulted in improved fracture toughness, nonlinear crack growth resistance, and good elevated temperature strength. However, low temperature strength was limited by grains of excessive length (30 to 100 microns). These excessively long grains were surrounded by regions rich in sintering additives.

  18. The preparation of high-adsorption, spherical, hexagonal boron nitride by template method

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Ning, E-mail: zhangning5832@163.com; Liu, Huan; Kan, Hongmin; Wang, Xiaoyang; Long, Haibo; Zhou, Yonghui

    2014-11-15

    Highlights: • The high-adsorption, spherical, hexagonal boron nitride powders were prepared. • The influence mechanism of template content on the micro-morphology and adsorption was explored. • At appropriate synthesis temperature, higher adsorption mesoporous spheres h-BN began to form. - Abstract: This research used low-cost boric acid and borax as a source of boron, urea as a nitrogen source, dodecyl-trimethyl ammonium chloride (DTAC) as a template, and thus prepared different micro-morphology hexagonal boron nitride powders under a flowing ammonia atmosphere at different nitriding temperatures. The effects of the template content and nitriding temperature on the micro-morphology of hexagonal boron nitride were studied and the formation mechanism analysed. The influences of the template content and nitriding temperature on adsorption performance were also explored. The results showed that at a nitriding temperature of 675 °C, the micro-morphologies of h-BN powder were orderly, inhomogeneous spherical, uniform spherical, beam, and pie-like with increasing template content. The micro-morphology was inhomogeneous spherical at a DTAC dose of 7.5%. The micro-morphology was uniform spherical at a DTAC dose of 10%. At a DTAC dose of 12%, the micro-morphology was a mixture of beam and pie-like shapes. At a certain template content (DTAC at 10%) and at lower nitriding temperatures (625 °C and 650 °C), spherical shell structures with surface subsidence began to form. The porous spheres would appear at a nitriding temperature of 675 °C, and the ball diameter thus formed was approximately 500–600 nm. The ball diameter was about 600–700 nm when the nitriding temperature was 700 °C. At a nitriding temperature of 725 °C, the ball diameter was between 800 and 1000 nm and sintering necking started to form. When the relative pressure was higher, previously closed pores opened and connected with the outside world: the adsorption then increased significantly. The

  19. Graphene metallization of high-stress silicon nitride resonators for electrical integration.

    Science.gov (United States)

    Lee, Sunwoo; Adiga, Vivekananda P; Barton, Robert A; van der Zande, Arend M; Lee, Gwan-Hyoung; Ilic, B Rob; Gondarenko, Alexander; Parpia, Jeevak M; Craighead, Harold G; Hone, James

    2013-09-11

    High stress stoichiometric silicon nitride resonators, whose quality factors exceed one million, have shown promise for applications in sensing, signal processing, and optomechanics. Yet, electrical integration of the insulating silicon nitride resonators has been challenging, as depositing even a thin layer of metal degrades the quality factor significantly. In this work, we show that graphene used as a conductive coating for Si3N4 membranes reduces the quality factor by less than 30% on average, which is minimal when compared to the effect of conventional metallization layers such as chromium or aluminum. The electrical integration of Si3N4-Graphene (SiNG) heterostructure resonators is demonstrated with electrical readout and electrostatic tuning of the frequency by up to 0.3% per volt. These studies demonstrate the feasibility of hybrid graphene/nitride mechanical resonators in which the electrical properties of graphene are combined with the superior mechanical performance of silicon nitride.

  20. Nitration by a simulated fuel technique for nitride fuel re-fabrication

    International Nuclear Information System (INIS)

    Lee, Young-Woo; Ryu, Ho Jin; Lee, Jae Won; Lee, Jung Won; Park, Geun Il

    2009-01-01

    Nitration reaction of a spent nuclear oxide fuel through a carbothermic reduction and the change in thermal conductivity of the resultant nitride specimens were investigated by a simulated fuel technique for use in nitride fuel re-fabrication from spent oxide fuel. The simulated spent oxide fuel was formed by compacting and sintering a powder mixture of UO 2 and stable oxide fission product impurities. It was pulverized by a 3-cycle successive oxidation-reduction treatment and converted into nitride pellet specimens through the carbothermic reduction. The rate of the nitration reaction of the simulated spent oxide fuel was decreased due to the fission product impurities when compared with pure uranium dioxide. The amount of Ba and Sr in the simulated spent oxide fuel was considerably reduced after the nitride fuel re-fabrication. The thermal conductivity of the nitride pellet specimen in the range 295-373 K was lower than that of the pure uranium nitride but higher than the simulated spent oxide fuel containing fission product impurities.

  1. Reactive ion assisted deposition of aluminum oxynitride thin films

    International Nuclear Information System (INIS)

    Hwangbo, C.K.; Lingg, L.J.; Lehan, J.P.; Macleod, H.A.; Suits, F.

    1989-01-01

    Optical properties, stoichiometry, chemical bonding states, and crystal structure of aluminum oxynitride (AlO/sub x/N/sub y/) thin films prepared by reactive ion assisted deposition were investigated. The results show that by controlling the amount of reactive gases the refractive index of aluminum oxynitride films at 550 nm is able to be varied from 1.65 to 1.83 with a very small extinction coefficient. Variations of optical constants and chemical bonding states of aluminum oxynitride films are related to the stoichiometry. From an x-ray photoelectron spectroscopy analysis it is observed that our aluminum oxynitride film is not simply a mixture of aluminum oxide and aluminum nitride but a continuously variable compound. The aluminum oxynitride films are amorphous from an x-ray diffraction analysis. A rugate filter using a step index profile of aluminum oxynitride films was fabricated by nitrogen ion beam bombardment of a growing Al film with backfill oxygen pressure as the sole variation. This filter shows a high resistivity to atmospheric moisture adsorption, suggesting that the packing density of aluminum oxynitride films is close to unity and the energetic ion bombardment densifies the film as well as forming the compound

  2. Effect of porosity on thermal and electrical properties of polycrystalline bulk ZrN prepared by spark plasma sintering

    International Nuclear Information System (INIS)

    Adachi, Jun; Kurosaki, Ken; Uno, Masayoshi; Yamanaka, Shinsuke

    2007-01-01

    Two kinds of polycrystalline zirconium nitride (ZrN) pellets were prepared by a spark plasma sintering (SPS). Thermal and electrical properties were measured from room temperature to 1473 and 1000 K, respectively. Thermal expansion is almost independent of porosity. On the other hand, electrical and thermal conductivities systematically decreased with increasing porosity. Porosity dependences of electrical and thermal conductivities are studied through the Maxwell-Eucken's equation

  3. Sintering diagrams of UO2

    International Nuclear Information System (INIS)

    Mohan, A.; Soni, N.C.; Moorthy, V.K.

    1979-01-01

    Ashby's method (see Acta Met., vol. 22, p. 275, 1974) of constructing sintering diagrams has been modified to obtain contribution diagrams directly from the computer. The interplay of sintering variables and mechanisms are studied and the factors that affect the participation of mechanisms in UO 2 are determined. By studying the physical properties, it emerges that the order of inaccuracies is small in most cases and do not affect the diagrams. On the other hand, even a 10% error in activation energies, which is quite plausible, would make a significant difference to the diagram. The main criticism of Ashby's approach is that the numerous properties and equations used, communicate their inaccuracies to the diagrams and make them unreliable. The present study has considerably reduced the number of factors that need to be refined to make the sintering diagrams more meaningful. (Auth.)

  4. Recycling of mill scale in sintering process

    Directory of Open Access Journals (Sweden)

    El-Hussiny N.A.

    2011-01-01

    Full Text Available This investigation deals with the effect of replacing some amount of Baharia high barite iron ore concentrate by mill scale waste which was characterized by high iron oxide content on the parameters of the sintering process., and investigation the effect of different amount of coke breeze added on sintering process parameters when using 5% mill scale waste with 95% iron ore concentrate. The results of this work show that, replacement of iron ore concentrate with mill scale increases the amount of ready made sinter, sinter strength and productivity of the sinter machine and productivity at blast furnace yard. Also, the increase of coke breeze leads to an increase the ready made sinter and productivity of the sintering machine at blast furnace yard. The productivity of the sintering machine after 5% decreased slightly due to the decrease of vertical velocity.

  5. Phosphorus containing sintered alloys (review)

    International Nuclear Information System (INIS)

    Muchnik, S.V.

    1984-01-01

    Phosphorus additives are considered for their effect on the properties of sintered alloys of different applications: structural, antifriction, friction, magnetic, hard, superhard, heavy etc. Data are presented on compositions and properties of phosphorus-containing materials produced by the powder metallurgy method. Phosphorus is shown to be an effective activator of sintering in some cases. When its concentration in the material is optimal it imparts the material such properties as strength, viscosity, hardness, wear resistance. Problems concerning powder metallurgy of amorphous phosphorus-containing alloys are reported

  6. Preparation and sintering of Zr(C,N,O) phases

    International Nuclear Information System (INIS)

    Tamborenea, S.; Mazzoni, A.D.; Aglietti, E.F.

    2003-01-01

    The Zr(C,O,N) compounds form a great mono-phase zone belonging to the pseudoternary ZrO-ZrN-ZrC system.Theses phases have cubic crystalline structure with a o parameter depending on the C, O 2 and N 2 content.These phases have many potential applications in the manufacture of ceramic pieces utilizable as electronic conductors.The Zr (C,O,N) phases can be obtained from ZrO 2 by carbonitriding reactions: that is carbothermal reduction and simultaneous nitriding.In this work a series of experiences of carbonitriding of zirconia under different conditions (temperatures between 1400 and 1600degC, times of 120 min, carbon content between 20 and 40%) in order to obtain suitable powders to be sintered.The XRD analysis shows the Zr(C,O,N) as the main products and β -ZrON as the only secondary product in proportions depending on the obtaining conditions.The variables employed were the C content and the reaction temperature.The Zr(C,O,N) content varies between 40 and 90% and tends to increase with the temperature and the carbon content whereas the β -ZrON phase varies between the 40 and 10 % decreasing its proportion with temperature and the carbon content.The oxidation resistance of these phases was studied by DTA-TG tests in air.Results show complete oxidation reaction at ∼500degC in air.The sintering of these materials was made on disks obtained by pressing of powders of Zr(C,N,O) contents higher than 90%.Sintering was performed in nitrogen atmosphere and temperatures between 1450 and 1620degC.Disks were characterized by pycnometry and Hg volumeter.The densities obtained were between 5 and 6,6g/cm 3 with a tendency to increase with the Zr(C,N,O) phase content, the temperature and the sintering time.Sintered disks were characterized by dilatometry in N 2

  7. Graphitic Carbon Nitride Materials for Energy Applications

    OpenAIRE

    Belen Jorge, A.; Dedigama, I.; Mansor, N.; Jervis, R.; Corà, F.; McMillan, P. F.; Brett, D.

    2015-01-01

    Polymeric layered carbon nitrides were investigated for use as catalyst support materials for proton exchange membrane fuel cells (PEMFCs) and water electrolyzers (PEMWEs). Three different carbon nitride materials were prepared: a heptazine-based graphitic carbon nitride material (gCNM), poly (triazine) imide carbon nitride intercalated with LiCl component (PTI-Li+Cl-) and boron-doped graphitic carbon nitride (B-gCNM). Following accelerated corrosion testing, all graphitic carbon nitride mate...

  8. Recycling of automotive aluminum

    OpenAIRE

    Cui, Jirang; Roven, Hans Jørgen

    2010-01-01

    With the global warming of concern, the secondary aluminum stream is becoming an even more important component of aluminum production and is attractive because of its economic and environmental benefits. In this work, recycling of automotive aluminum is reviewed to highlight environmental benefits of aluminum recycling, use of aluminum alloys in automotive applications, automotive recycling process, and new technologies in aluminum scrap process. Literature survey shows that newly developed t...

  9. Sintering of ultra high molecular weight polyethylene

    Indian Academy of Sciences (India)

    ... involves compaction of polymeric powder under pressure and sintering of the preforms at temperature above its melting point. In this study, we report our results on compaction and sintering behaviour of two grades of UHMWPE with reference to the powder morphology, sintering temperatures and strength development.

  10. Master Sintering Surface: A practical approach to its construction and utilization for Spark Plasma Sintering prediction

    Directory of Open Access Journals (Sweden)

    Pouchly V.

    2012-01-01

    Full Text Available The sintering is a complex thermally activated process, thus any prediction of sintering behaviour is very welcome not only for industrial purposes. Presented paper shows the possibility of densification prediction based on concept of Master Sintering Surface (MSS for pressure assisted Spark Plasma Sintering (SPS. User friendly software for evaluation of the MSS is presented. The concept was used for densification prediction of alumina ceramics sintered by SPS.

  11. Sintering additives for zirconia ceramics

    International Nuclear Information System (INIS)

    Wu, S.

    1986-01-01

    This book is an overview of sintering science and its application to zirconia materials including CaO, MgO, and Y/sub 2/O/sub 3/-CeO/sub 2/ doped materials. This book is a reference for first-time exposure to zirconia materials technology, particularly densification

  12. Sintering additives for zirconia ceramics

    Energy Technology Data Exchange (ETDEWEB)

    Wu, S.

    1986-01-01

    This book is an overview of sintering science and its application to zirconia materials including CaO, MgO, and Y/sub 2/O/sub 3/-CeO/sub 2/ doped materials. This book is a reference for first-time exposure to zirconia materials technology, particularly densification.

  13. Fatigue modelling for gas nitriding

    Directory of Open Access Journals (Sweden)

    H. Weil

    2016-10-01

    Full Text Available The present study aims to develop an algorithm able to predict the fatigue lifetime of nitrided steels. Linear multi-axial fatigue criteria are used to take into account the gradients of mechanical properties provided by the nitriding process. Simulations on rotating bending fatigue specimens are made in order to test the nitrided surfaces. The fatigue model is applied to the cyclic loading of a gear from a simulation using the finite element software Ansys. Results show the positive contributions of nitriding on the fatigue strength

  14. Silicon nitride films deposited with an electron beam created plasma

    Science.gov (United States)

    Bishop, D. C.; Emery, K. A.; Rocca, J. J.; Thompson, L. R.; Zamani, H.; Collins, G. J.

    1984-01-01

    The electron beam assisted chemical vapor deposition (EBCVD) of silicon nitride films using NH3, N2, and SiH4 as the reactant gases is reported. The films have been deposited on aluminum, SiO2, and polysilicon film substrates as well as on crystalline silicon substrates. The range of experimental conditions under which silicon nitrides have been deposited includes substrate temperatures from 50 to 400 C, electron beam currents of 2-40 mA, electron beam energies of 1-5 keV, total ambient pressures of 0.1-0.4 Torr, and NH3/SiH4 mass flow ratios of 1-80. The physical, electrical, and chemical properties of the EBCVD films are discussed.

  15. Study of corrosion behavior for nitrocarburized sintered Astaloy CrM + C

    International Nuclear Information System (INIS)

    Teimouri, M.; Ahmadi, M.; Pirayesh, N.; Aliofkhazraei, M.; Khoee, M. Mousavi; Khorsand, H.; Mirzamohammadi, S.

    2009-01-01

    Salt bath nitriding/nitrocarburizing is a surface treatment developed to improve tribological and corrosion properties of ferrous materials. In this research, sintered Astaloy CrM + 0.3% C samples were nitrocarburized at 580 deg. C for 1, 1.5, 2 and 2.5 h. The microstructure and phase composition of the surface layer was investigated by optical and scanning microscopy and X-ray diffraction. Corrosion behavior of samples was evaluated using both potentiodynamic polarization technique and electrochemical impedance spectroscopy in 3.5% sodium chloride solution. XRD analyses indicate that the surface layer in nitrocarburized samples is mainly composed of ε-iron carbonitride (Fe 2-3 (CN)). The results reveal that salt bath nitrocarburizing for at least 2 h can improve significantly corrosion resistance of sintered Astaloy CrM + C.

  16. Strain-enhanced sintering of iron powders

    Energy Technology Data Exchange (ETDEWEB)

    Amador, D.R.; Torralba, J.M. [Universidad Carlos III de Madrid, Departamento de Ciencias de Materiales e Ingenieria Metalurgica, Leganes, Madrid (Spain); Monge, M.A.; Pareja, R. [Universidad Carlos III de Madrid, Departamento de Fisica, Madrid (Spain)

    2005-02-01

    Sintering of ball-milled and un-milled Fe powders has been investigated using dilatometry, X-ray, density, and positron annihilation techniques. A considerable sintering enhancement is found in milled powders showing apparent activation energies that range between 0.44 and 0.80 eV/at. The positron annihilation results, combined with the evolution of the shrinkage rate with sintering temperature, indicate generation of lattice defects during the sintering process of milled and un-milled powders. The sintering enhancement is attributed to pipe diffusion along the core of moving dislocations in the presence of the vacancy excess produced by plastic deformation. Positron annihilation results do not reveal the presence of sintering-induced defects in un-milled powders sintered above 1200 K, the apparent activation energy being in good agreement with that for grain-boundary diffusion in {gamma}-Fe. (orig.)

  17. Plasmonic Titanium Nitride Nanostructures via Nitridation of Nanopatterned Titanium Dioxide

    DEFF Research Database (Denmark)

    Guler, Urcan; Zemlyanov, Dmitry; Kim, Jongbum

    2017-01-01

    Plasmonic titanium nitride nanostructures are obtained via nitridation of titanium dioxide. Nanoparticles acquired a cubic shape with sharper edges following the rock-salt crystalline structure of TiN. Lattice constant of the resulting TiN nanoparticles matched well with the tabulated data. Energy...

  18. Microwave Combustion and Sintering Without Isostatic Pressure. Topical Report August 1, 1995 - October 30, 1996

    International Nuclear Information System (INIS)

    Ebadian, M.A.; Monroe, N.D.H.

    1998-01-01

    This investigation involves a study of the influence of key processing parameters on the heating of materials using microwave energy. Selective and localized heating characteristics of microwaves will be utilized in the sintering of ceramics without hydrostatic pressure. In addition, combustion synthesis will be studied for the production of powders, carbides, and nitrides by combining two or more solids or a solid and a gas to form new materials. The insight gained from the interaction of microwaves with various materials will be utilized in the mobilization and subsequent redeposition of uranium

  19. Microcontact-printing-assisted access of graphitic carbon nitride films with favorable textures toward photoelectrochemical application.

    Science.gov (United States)

    Liu, Jian; Wang, Hongqiang; Chen, Zu Peng; Moehwald, Helmuth; Fiechter, Sebastian; van de Krol, Roel; Wen, Liping; Jiang, Lei; Antonietti, Markus

    2015-01-27

    An "ink" (cyanamide) infiltrated anodic aluminum oxide (AAO) stamp is found capable of printing carbon nitride films featuring regular microstructures of the stamp onto the substrates via in situ "chemical vapor deposition". A photocurrent density of 30.2 μA cm(-2 --) at 1.23 VRHE is achieved for a film on a conductive substrate, which is so far the highest value for pure carbon nitride based photoelectrochemical devices. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Optical characterization of gallium nitride

    NARCIS (Netherlands)

    Kirilyuk, Victoria

    2002-01-01

    Group III-nitrides have been considered a promising system for semiconductor devices since a few decades, first for blue- and UV-light emitting diodes, later also for high-frequency/high-power applications. Due to the lack of native substrates, heteroepitaxially grown III-nitride layers are usually

  1. Electrochemical nitridation of metal surfaces

    Science.gov (United States)

    Wang, Heli; Turner, John A.

    2015-06-30

    Electrochemical nitridation of metals and the produced metals are disclosed. An exemplary method of electrochemical nitridation of metals comprises providing an electrochemical solution at low temperature. The method also comprises providing a three-electrode potentiostat system. The method also comprises stabilizing the three-electrode potentiostat system at open circuit potential. The method also comprises applying a cathodic potential to a metal.

  2. Field assisted sintering of refractory carbide ceramics and fiber reinforced ceramic matrix composites

    Science.gov (United States)

    Gephart, Sean

    materials. While FAST sintered materials showed higher average values, in general they also showed consistently larger variation in the scattered data and consequently larger standard deviation for the resulting material properties. In addition, dynamic impact testing (V50 test) was conducted on the resulting materials and it was determined that there was no discernable correlation between observed mechanical properties of the ceramic materials and the resulting dynamic testing. Another study was conducted on the sintering of SiC and carbon fiber reinforced SiC ceramic matrix composites (CMC) using FAST. There has been much interest recently in fabricating high strength, low porosity SiC CMC.s for high temperature structural applications, but the current methods of production, namely chemical vapor infiltration (CVI), melt infiltration (MI), and polymer infiltration and pyrolysis (PIP), are considered time consuming and involve material related shortcomings associated with their respective methodologies. In this study, SiC CMC.s were produced using the 25 ton laboratory unit with a target sample size of 40 mm diameter and 3 mm thickness, as well as on the larger 250 ton industrial FAST system targeting a sample size of 101.6 x 101.6 x 3 mm3 to investigate issues associated with scaling. Several sintering conditions were explored including: pressure of 35-65 MPa, temperature of 1700-1900°C, and heating rates between 50-400°C/min. The SiC fibers used in this study were coated using chemical vapor deposition (CVD) with boron nitride (BN) and pyrolytic carbon to act as a barrier layer and preserve the integrity of the fibers during sintering. Then the barrier coating was coated by an outer layer of SiC to enhance the bonding between the fibers and the SiC matrix. Microstructures of the sintered samples were examined by FE-SEM. Mechanical properties including flexural strength-deflection and stress-strain were characterized using 4-point bend testing. Tensile testing was

  3. Charging effect of aluminum nitride thin films containing Al nanocrystals.

    Science.gov (United States)

    Liu, Y; Chen, T P; Ding, L; Wong, J I; Yang, M; Liu, Z; Li, Y B; Zhang, S

    2010-01-01

    In this work, the Al-rich AIN thin film is deposited on Si substrate by radio frequency (RF) sputtering to form a metal-insulator-semiconductor (MIS) structure. Al nanocrystals (nc-Al) are formed and embedded in the AIN thin film. Charge trapping/detrapping in the nc-Al leads to a shift in the flat-band voltage (VFB) of the MIS structure. The charge storage ability of the AIN thin films containing Al nanocrystals provides the possibility of memory applications. On the other hand, charge trapping in nc-Al reduces the current conduction because of the breaking of some tunneling paths due to Coulomb blockade effect and the current conduction evolves with a trend towards one-dimensional transport.

  4. Temperature-compensated aluminum nitride lamb wave resonators.

    Science.gov (United States)

    Lin, Chih-Ming; Yen, Ting-Ta; Lai, Yun-Ju; Felmetsger, Valery V; Hopcroft, Matthew A; Kuypers, Jan H; Pisano, Albert P

    2010-03-01

    In this paper, the temperature compensation of AlN Lamb wave resonators using edge-type reflectors is theoretically studied and experimentally demonstrated. By adding a compensating layer of SiO2 with an appropriate thickness, a Lamb wave resonator based on a stack of AlN and SiO2 layers can achieve a zero first-order temperature coefficient of frequency (TCF). Using a composite membrane consisting of 1 microm AlN and 0.83 microm SiO2, a Lamb wave resonator operating at 711 MHz exhibits a first-order TCF of -0.31 ppm/degrees C and a second-order TCF of -22.3 ppb/degrees C(2) at room temperature. The temperature-dependent fractional frequency variation is less than 250 ppm over a wide temperature range from -55 degrees C to 125 degrees C. This temperature-compensated AlN Lamb wave resonator is promising for future applications including thermally stable oscillators, filters, and sensors.

  5. Method and apparatus for aluminum nitride monocrystal boule growth

    Science.gov (United States)

    Wang, Shaoping

    2009-04-28

    A crystal growth setup within a physical vapor transport growth furnace system for producing AlN monocrystal boules at high temperatures includes a crucible effective to contain an AlN source material and a growing AlN crystal boule. This crucible has a thin wall thickness in at least that portion housing the growing AlN crystal boule. Other components include a susceptor, in case of an inductive heating, or a heater, in case of a resistive heating, a thermal insulation enclosing the susceptor or heater effective to provide a thermal gradient inside the crucible in the range of 5-100.degree. C./cm and a furnace chamber capable of being operated from a vacuum (<0.1 torr) to a gas pressure of at least 4000 torr through filling or flowing a nitrogen gas or a mixture of nitrogen gas and argon gas. The high temperatures contribute to a high boule growth rate and the thin wall thickness contributes to reduced imparted stress during boule removal.

  6. Aluminum nitride graphene for DMMP nerve agent adsorption and detection

    International Nuclear Information System (INIS)

    Darvish Ganji, Masoud; Dalirandeh, Zeinab; Khosravi, Azadeh; Fereidoon, A.

    2014-01-01

    Using ab initio van der Waals density functional (vdW-DF) calculations, we investigate the adsorption of DMMP nerve agent on graphene, BN and AlN graphenes, involving full geometry optimization. Several active sites for both the interacting systems were considered in the adsorption process. The detailed analysis of the structural and electronical properties of energetically favorable configurations is carried out. The results show that adsorption of DMMP molecule on the Al site of the AlN graphene is energetically preferable. The calculated binding energy and equilibrium distance are about −0.74 eV (−72.34 kJ mol −1 ) and 2.035 Å, respectively, accompanying with charge transfer of 0.23 e. In addition, the P–O bond is rather significantly elongated when DMMP is adsorbed on AlN graphene. Compared to carbon graphene or BN graphene, the AlN graphene has stronger interaction with the DMMP molecule and can provide more sensitive signal for a single DMMP molecule. In particular, the semiconducting AlN graphene would become metallic after adsorption DMMP. Consequently, the AlN graphene is a promising candidate for the DMMP sensing and detection. Our ab initio vdW-DF findings present evidence for a rational benchmark for the applicability of the AlN graphene for DMMP adsorption and detection. - Highlights: • Ab initio vdW-DF calculations were used for interaction of DMMP with various types of graphene. • Full structural optimization was performed for several possible active sites. • Electronic structure of the energetically favorable complexes was analyzed. • First-principles calculations showed that AlN graphene is a very promising candidate for DMMP sensing and detection

  7. Sintered wire cesium dispenser photocathode

    Science.gov (United States)

    Montgomery, Eric J; Ives, R. Lawrence; Falce, Louis R

    2014-03-04

    A photoelectric cathode has a work function lowering material such as cesium placed into an enclosure which couples a thermal energy from a heater to the work function lowering material. The enclosure directs the work function lowering material in vapor form through a low diffusion layer, through a free space layer, and through a uniform porosity layer, one side of which also forms a photoelectric cathode surface. The low diffusion layer may be formed from sintered powdered metal, such as tungsten, and the uniform porosity layer may be formed from wires which are sintered together to form pores between the wires which are continuous from the a back surface to a front surface which is also the photoelectric surface.

  8. Nuclear tracks in sinterized gemstones

    International Nuclear Information System (INIS)

    Espinosa, G.; Rodriguez, L.V.; Golzarri, J.I.; Castano, V.M.

    1993-01-01

    The responses of sinterized gemstones to alpha particles attempt analyzed with the objective of finding new materials for SSNTD, and also to understand their interaction with radiation and the formation of tracks. In this work we present the results of the characterization of these materials as SSNTD. The micro structural changes observed by electron microscopy. The preparation, etching solution concentration, etching time and effects of temperature are discussed. (Author)

  9. Effects of ball milling and sintering on alumina and alumina-boron compounds

    Science.gov (United States)

    Cross, Thomas

    Alumina has a wide variety of applications, but the processing of alumina based materials can be costly. Mechanically milling alumina has been shown to enhance the sintering properties while decreasing the sintering temperature. Additions of boron have also proven to increase sintering properties of alumina. These two processes, mechanical milling and boron additions, will be combined to test the sintering properties and determine if they are improved upon even further compared to the individual processes. Multiple samples of pure alumina, 0.2 weight percent boron, and 1.0 weight percent boron are batched and processed in a ball mill for different time intervals. These samples are then characterized to observe the structure and properties of the samples after milling but before sintering. Pellets are dry pressed from the milled powders, sintered at 1200°C for one to 10 hours, and characterized to determine the impact of processing. X-ray diffractometry (XRD) was used on each sample to determine crystallite size and lattice parameters at different stages throughout the experiment. XRD was also used to identify any samples with an aluminum borate phase. Scanning electron microscopy (SEM) was used to observe the powder and pellet morphology and to measure bulk chemical composition. Samples were sputter coated with an Au-Pd coating observed in the SEM to characterize the topography as a function of variables such as milling time, boron composition, and sintering time. Additionally, porosity and change in diameter were measured to track the sintering process. Milling sample for longer periods of time would be unnecessary due to the crystallite size leveling off between 10 and 12 hours of milling time. Samples of alumina with 0.2 weight percent boron prove to have very little effect on the sintering properties. At 1.0 weight percent boron, there are changes in diffraction patterns and topography after being sintered for one hour. The porosities of all of the sintered

  10. Microwave sintering of ceramic materials

    Science.gov (United States)

    Karayannis, V. G.

    2016-11-01

    In the present study, the potential of microwave irradiation as an innovative energy- efficient alternative to conventional heating technologies in ceramic manufacturing is reviewed, addressing the advantages/disadvantages, while also commenting on future applications of possible commercial interest. Ceramic materials have been extensively studied and used due to several advantages they exhibit. Sintering ceramics using microwave radiation, a novel technology widely employed in various fields, can be an efficient, economic and environmentally-friendlier approach, to improve the consolidation efficiency and reduce the processing cycle-time, in order to attain substantial energy and cost savings. Microwave sintering provides efficient internal heating, as energy is supplied directly and penetrates the material. Since energy transfer occurs at a molecular level, heat is generated throughout the material, thus avoiding significant temperature gradients between the surface and the interior, which are frequently encountered at high heating rates upon conventional sintering. Thus, rapid, volumetric and uniform heating of various raw materials and secondary resources for ceramic production is possible, with limited grain coarsening, leading to accelerated densification, and uniform and fine-grained microstructures, with enhanced mechanical performance. This is particularly important for manufacturing large-size ceramic products of quality, and also for specialty ceramic materials such as bioceramics and electroceramics. Critical parameters for the process optimization, including the electromagnetic field distribution, microwave-material interaction, heat transfer mechanisms and material transformations, should be taken into consideration.

  11. Methods for improved growth of group III nitride semiconductor compounds

    Science.gov (United States)

    Melnik, Yuriy; Chen, Lu; Kojiri, Hidehiro

    2015-03-17

    Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.

  12. Functionalized boron nitride nanotubes

    Science.gov (United States)

    Sainsbury, Toby; Ikuno, Takashi; Zettl, Alexander K

    2014-04-22

    A plasma treatment has been used to modify the surface of BNNTs. In one example, the surface of the BNNT has been modified using ammonia plasma to include amine functional groups. Amine functionalization allows BNNTs to be soluble in chloroform, which had not been possible previously. Further functionalization of amine-functionalized BNNTs with thiol-terminated organic molecules has also been demonstrated. Gold nanoparticles have been self-assembled at the surface of both amine- and thiol-functionalized boron nitride Nanotubes (BNNTs) in solution. This approach constitutes a basis for the preparation of highly functionalized BNNTs and for their utilization as nanoscale templates for assembly and integration with other nanoscale materials.

  13. Characterization of salt cake from secondary aluminum production.

    Science.gov (United States)

    Huang, Xiao-Lan; Badawy, Amro El; Arambewela, Mahendranath; Ford, Robert; Barlaz, Morton; Tolaymat, Thabet

    2014-05-30

    Salt cake is a major waste component generated from the recycling of secondary aluminum processing (SAP) waste. Worldwide, the aluminum industry produces nearly 5 million tons of waste annually and the end-of-life management of these wastes is becoming a challenge in the U.S. and elsewhere. In this study, the mineral phases, metal content and metal leachability of 39 SAP waste salt cake samples collected from 10 different facilities across the U.S. were determined. The results showed that aluminum (Al), aluminum oxide, aluminum nitride and its oxides, spinel and elpasolite are the dominant aluminum mineral phases in salt cake. The average total Al content was 14% (w/w). The overall percentage of the total leachable Al in salt cake was 0.6% with approximately 80% of the samples leaching at a level less than 1% of the total aluminum content. The extracted trace metal concentrations in deionized water were relatively low (μgL(-1) level). The toxicity characteristic leaching procedure (TCLP) was employed to further evaluate leachability and the results indicated that the leached concentrations of toxic metals from salt cake were much lower than the EPA toxicity limit set by USEPA. Published by Elsevier B.V.

  14. Production of dispersed nanometer sized YAG powders from alkoxide, nitrate and chloride precursors and spark plasma sintering to transparency

    Energy Technology Data Exchange (ETDEWEB)

    Suarez, M., E-mail: m.suarez@cinn.e [Departamento de Materiales Nanoestructurados, Centro de Investigacion en Nanomateriales y Nanotecnologia (CINN), Principado de Asturias - Consejo superior de Investigaciones Cientificas (CSIC) - Universidad de Oviedo - UO, Parque Tecnologico de Asturias, 33428 Llanera, Asturias (Spain); Fernandez, A. [Fundacion ITMA, Parque Tecnologico de Asturias, 33428, Llanera (Spain); Menendez, J.L.; Torrecillas, R. [Departamento de Materiales Nanoestructurados, Centro de Investigacion en Nanomateriales y Nanotecnologia (CINN), Principado de Asturias - Consejo superior de Investigaciones Cientificas (CSIC) - Universidad de Oviedo - UO, Parque Tecnologico de Asturias, 33428 Llanera, Asturias (Spain)

    2010-03-18

    Yttrium aluminum garnet (YAG) was synthesized from different starting materials, i.e., alkoxide, nitrate and chloride precursors. The conversion steps from the precursors to crystalline YAG were studied by Raman spectroscopy. Dispersed YAG powders were formed at a relatively low temperature, around 800 {sup o}C by the chlorides route, whereas alkoxide precursors needed firing over 900 {sup o}C and nitrates even over 1100 {sup o}C. Lyophilized YAG gel was sintered to transparency by the spark plasma sintering method at 1500 {sup o}C with in-line transmittances close to 60% at 680 nm and over 80% in the infrared range.

  15. Production of dispersed nanometer sized YAG powders from alkoxide, nitrate and chloride precursors and spark plasma sintering to transparency

    International Nuclear Information System (INIS)

    Suarez, M.; Fernandez, A.; Menendez, J.L.; Torrecillas, R.

    2010-01-01

    Yttrium aluminum garnet (YAG) was synthesized from different starting materials, i.e., alkoxide, nitrate and chloride precursors. The conversion steps from the precursors to crystalline YAG were studied by Raman spectroscopy. Dispersed YAG powders were formed at a relatively low temperature, around 800 o C by the chlorides route, whereas alkoxide precursors needed firing over 900 o C and nitrates even over 1100 o C. Lyophilized YAG gel was sintered to transparency by the spark plasma sintering method at 1500 o C with in-line transmittances close to 60% at 680 nm and over 80% in the infrared range.

  16. Titanium Powder Sintering in a Graphite Furnace and Mechanical Properties of Sintered Parts

    OpenAIRE

    Changzhou Yu; Peng Cao; Mark Ian Jones

    2017-01-01

    Recent accreditation of titanium powder products for commercial aircraft applications marks a milestone in titanium powder metallurgy. Currently, powder metallurgical titanium production primarily relies on vacuum sintering. This work reported on the feasibility of powder sintering in a non-vacuum furnace and the tensile properties of the as-sintered Ti. Specifically, we investigated atmospheric sintering of commercially pure (C.P.) titanium in a graphite furnace backfilled with argon and stu...

  17. Production of sintered alumina from powder; optimization of the sinterized parameters for the maximum mechanical resistence

    International Nuclear Information System (INIS)

    Rocha, J.C. da.

    1981-02-01

    Pure, sinterized alumina and the optimization of the parameters of sinterization in order to obtain the highest mechanical resistence are discussed. Test materials are sinterized from a fine powder of pure alumina (Al 2 O 3 ), α phase, at different temperatures and times, in air. The microstructures are analysed concerning porosity and grain size. Depending on the temperature or the time of sinterization, there is a maximum for the mechanical resistence. (A.R.H.) [pt

  18. Comprehensive perspective on the mechanism of preferred orientation in reactive-sputter-deposited nitrides

    International Nuclear Information System (INIS)

    Kajikawa, Yuya; Noda, Suguru; Komiyama, Hiroshi

    2003-01-01

    Texture control of sputter-deposited nitride films has provoked a great deal of interest due to its technological importance. Despite extensive research, however, the reported results are scattered and discussions about the origin of preferred orientation (PO) are sometimes conflicting, and therefore controversial. The aim of this study is to acquire a clear perspective in order to discuss the origin of PO of sputter-deposited nitrides. Among nitrides, we focus on titanium nitride (TiN), aluminum nitride (AlN), and tantalum nitride (TaN), which are three commonly used nitrides. First, we collected reported experimental results about the relation between operating conditions and PO, because PO is considered to be determined by film formation processes, such as surface diffusion or grain growth, which is affected by operating conditions. We also collected reported results about such PO-determining processes. Then, we categorized the PO-determining processes into an initial stage and a growth stage of film deposition, and further categorized each stage into a vapor-solid interface and a solid-solid interface. Then, we related each stage and interface to film morphology and to PO-determining processes. Finally, based on existing results, previous models, and proposed schema, we discuss the origin of PO. Based on previous experimental results on film morphology, PO of nitride films occurred in the growth stage at the vapor-solid interface, where the sticking process of the precursor and the surface diffusion process determine PO, rather than in the initial stage and in the growth stage at the solid-solid interface. TiN (002) PO, however, seems to be caused in the initial stage at the solid-solid interface

  19. Alternative sintering methods compared to conventional thermal sintering for inkjet printed silver nanoparticle ink

    NARCIS (Netherlands)

    Niittynen, J.; Abbel, R.; Mäntysalo, M.; Perelaer, J.; Schubert, U.S.; Lupo, D.

    2014-01-01

    In this contribution several alternative sintering methods are compared to traditional thermal sintering as high temperature and long process time of thermal sintering are increasing the costs of inkjet-printing and preventing the use of this technology in large scale manufacturing. Alternative

  20. Protocol for Ultralow-Temperature Ceramic Sintering: An Integration of Nanotechnology and the Cold Sintering Process.

    Science.gov (United States)

    Guo, Hanzheng; Baker, Amanda; Guo, Jing; Randall, Clive A

    2016-11-22

    The sintering process is an essential step in taking particulate materials into dense ceramic materials. Although a number of sintering techniques have emerged over the past few years, the sintering process is still performed at high temperatures. Here we establish a protocol to achieve dense ceramic solids at extremely low temperatures (sustainable manufacturing practices.

  1. Optimization of time–temperature schedule for nitridation of silicon ...

    Indian Academy of Sciences (India)

    weight gain. Green compact of density 66%, the nitridation schedule was maneuvered for complete nitridation. Iron promotes nitridation reaction. Higher weight loss during nitridation of iron doped compact is the main cause of lower ...

  2. Controlling of Nitriding Process on Reactive Plasma Spraying of Al Particles

    Energy Technology Data Exchange (ETDEWEB)

    Shahien, Mohammed [Graduate Student, Toyohashi University of Technology (Japan); Yamada, Motohiro; Yasui, Toshiaki; Fukumoto, Masahiro, E-mail: mo.shahien@yahoo.com [Toyohashi University of Technology (Japan)

    2011-10-29

    Reactive plasma spraying (RPS) has been considered as a promising technology for in-situ formation of aluminum nitride (AlN) thermally sprayed coatings. To fabricate thick A lN coatings in RPS process, controlling and improving the in-flight nitriding reaction of Al particles is required. In this study, it was possible to control the nitriding reaction by using ammonium chloride (NH{sub 4}Cl) powders. Thick and dense AlN coating (more than 300 {mu}m thickness) was successfully fabricated with small addition of NH{sub 4}Cl powders. Thus, addition of NH{sub 4}Cl prevented the Al aggregation by changing the reaction pathway to a mild way with no explosive mode (relatively low heating rates) and it acts as a catalyst, nitrogen source and diluent agent.

  3. The Effect of Radiation on the Electrical Properties of Aluminum Gallium Nitride/Gallium Nitride Heterostructures

    National Research Council Canada - National Science Library

    McClory, John W

    2008-01-01

    AlGaN/GaN Heterojunction Field Effect Transistors (HFETs) were irradiated at low temperature and the temperature dependent changes to drain current, gate current, capacitance, and transconductance were measured...

  4. Two-Dimensional Modeling of Aluminum Gallium Nitride/Gallium Nitride High Electron Mobility Transistor

    National Research Council Canada - National Science Library

    Holmes, Kenneth

    2002-01-01

    .... This thesis studies the effects of AIGaN/GaN HEMTs' polarization, piezoelectric (PZ) and spontaneous, properties utilizing the TM commercially available Silvaco Atlas software for modeling and simulation...

  5. Chemical vapor deposition of refractory ternary nitrides for advanced diffusion barriers

    Energy Technology Data Exchange (ETDEWEB)

    Custer, Jonathan S.; Fleming, James G.; Roherty-Osmun, Elizabeth; Smith, Paul Martin

    1998-09-22

    Refractory ternary nitride films for diffusion barriers in microelectronics have been grown using chemical vapor deposition. Thin films of titanium-silicon-nitride, tungsten-boron-nitride, and tungsten-silicon-nitride of various compositions have been deposited on 150 mm Si wafers. The microstructure of the films are either fully amorphous for the tungsten based films, or nauocrystalline TiN in an amorphous matrix for titanium-silicon-nitride. All films exhibit step coverages suitable for use in future microelectronics generations. Selected films have been tested as diffusion barriers between copper and silicon, and generally perform extremely weH. These fiIms are promising candidates for advanced diffusion barriers for microelectronics applications. The manufacturing of silicon wafers into integrated circuits uses many different process and materials. The manufacturing process is usually divided into two parts: the front end of line (FEOL) and the back end of line (BEOL). In the FEOL the individual transistors that are the heart of an integrated circuit are made on the silicon wafer. The responsibility of the BEOL is to wire all the transistors together to make a complete circuit. The transistors are fabricated in the silicon itself. The wiring is made out of metal, currently aluminum and tungsten, insulated by silicon dioxide, see Figure 1. Unfortunately, silicon will diffuse into aluminum, causing aluminum spiking of junctions, killing transistors. Similarly, during chemical vapor deposition (CVD) of tungsten from ~fj, the reactivity of the fluorine can cause "worn-holes" in the silicon, also destroying transistors. The solution to these problems is a so-called diffusion barrier, which will allow current to pass from the transistors to the wiring, but will prevent reactions between silicon and the metal.

  6. Polarity Control in Group-III Nitrides beyond Pragmatism

    Science.gov (United States)

    Mohn, Stefan; Stolyarchuk, Natalia; Markurt, Toni; Kirste, Ronny; Hoffmann, Marc P.; Collazo, Ramón; Courville, Aimeric; Di Felice, Rosa; Sitar, Zlatko; Vennéguès, Philippe; Albrecht, Martin

    2016-05-01

    Controlling the polarity of polar semiconductors on nonpolar substrates offers a wealth of device concepts in the form of heteropolar junctions. A key to realize such structures is an appropriate buffer-layer design that, in the past, has been developed by empiricism. GaN or ZnO on sapphire are prominent examples for that. Understanding the basic processes that mediate polarity, however, is still an unsolved problem. In this work, we study the structure of buffer layers for group-III nitrides on sapphire by transmission electron microscopy as an example. We show that it is the conversion of the sapphire surface into a rhombohedral aluminum-oxynitride layer that converts the initial N-polar surface to Al polarity. With the various AlxOyNz phases of the pseudobinary Al2O3 -AlN system and their tolerance against intrinsic defects, typical for oxides, a smooth transition between the octahedrally coordinated Al in the sapphire and the tetrahedrally coordinated Al in AlN becomes feasible. Based on these results, we discuss the consequences for achieving either polarity and shed light on widely applied concepts in the field of group-III nitrides like nitridation and low-temperature buffer layers.

  7. Effect of Variation of Silicon Nitride Passivation Layer on Electron Irradiated Aluminum Gallium Nitride/Gallium Nitride HEMT Structures

    Science.gov (United States)

    2014-06-19

    1.071 x 1013 , ↓ 24% 1.425 ↓ 57% 200E0 200 200 Å 0 1547 1.42x 1013 3.5 200E1 200 200 Å 1016 cm-2 695 ↓ 55% 1.23 x 1013 .865 ↓ 75% 500E0...Klein, P. B., and Kazior, T. E.. “Trapping effects in GaN and SiC microwave FETs.” Proceedings of the IEEE , 90, no. 6 (2002): 1048-1058. Borchi, E...34 IEEE 252 Transactions on Nuclear Science, 46, no. 4 (1999): 834. Calleja, E., Sánchez, F. J., Basak, D., Sánchez-García, M. A., Muñoz, E

  8. Fine Grain Aluminum Superplasticity

    Science.gov (United States)

    1980-02-01

    Continua on ravaraa sida H nacaaaary and identify by block numbar) Superplastic aluminum, Superplasticity, Superplastic forming. High strength aluminum...size. The presence of precipitate particles also acts to impede grain boundary migration during recrystallization, further aiding in maintaining a

  9. High-pressure direct synthesis of aluminium nitride

    CERN Document Server

    Bockowski, M; Grzegory, I; Krukowski, S; Wróblewski, M; Porowski, S

    2002-01-01

    We report the results of direct synthesis of aluminium nitride (AlN) under high nitrogen pressure up to 1 GPa and temperatures up to 2000 K. At pressure from 10 to 650 MPa we observe the combustion synthesis of AlN. As the result of the combustion process one can obtain the AlN sintered powder or AlN/Al metal matrix composites. For N sub 2 pressure higher than 650 MPa the crystal growth of AlN from the solution of atomic nitrogen in aluminium is possible. Both needle-like and bulk AlN single crystals, up to 1 cm and 1 mm, respectively, have been obtained.

  10. Boron nitride converted carbon fiber

    Science.gov (United States)

    Rousseas, Michael; Mickelson, William; Zettl, Alexander K.

    2016-04-05

    This disclosure provides systems, methods, and apparatus related to boron nitride converted carbon fiber. In one aspect, a method may include the operations of providing boron oxide and carbon fiber, heating the boron oxide to melt the boron oxide and heating the carbon fiber, mixing a nitrogen-containing gas with boron oxide vapor from molten boron oxide, and converting at least a portion of the carbon fiber to boron nitride.

  11. Characterization and Reliability of Vertical N-Type Gallium Nitride Schottky Contacts

    Science.gov (United States)

    2016-09-01

    aluminum / gallium arsenide Schottky diodes,” J. Appl. Phys., vol. 69, no. 10, pp. 7142–7145, May, 1991. 80 THIS PAGE INTENTIONALLY LEFT BLANK...EECP equilibrium of electrochemical potential GaAs gallium arsenide GaN gallium nitride HEMT high-electron mobility transistor HF hydrofluoric acid...only one of the mechanisms [8]-[11]. For high mobility n-type Schottky contacts like Si, gallium arsenide (GaAs), and GaN, thermionic emission is

  12. Nitride stabilized core/shell nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Kuttiyiel, Kurian Abraham; Sasaki, Kotaro; Adzic, Radoslav R.

    2018-01-30

    Nitride stabilized metal nanoparticles and methods for their manufacture are disclosed. In one embodiment the metal nanoparticles have a continuous and nonporous noble metal shell with a nitride-stabilized non-noble metal core. The nitride-stabilized core provides a stabilizing effect under high oxidizing conditions suppressing the noble metal dissolution during potential cycling. The nitride stabilized nanoparticles may be fabricated by a process in which a core is coated with a shell layer that encapsulates the entire core. Introduction of nitrogen into the core by annealing produces metal nitride(s) that are less susceptible to dissolution during potential cycling under high oxidizing conditions.

  13. ALUMINUM BOX BUNDLING PRESS

    Directory of Open Access Journals (Sweden)

    Iosif DUMITRESCU

    2015-05-01

    Full Text Available In municipal solid waste, aluminum is the main nonferrous metal, approximately 80- 85% of the total nonferrous metals. The income per ton gained from aluminum recuperation is 20 times higher than from glass, steel boxes or paper recuperation. The object of this paper is the design of a 300 kN press for aluminum box bundling.

  14. Master sintering curves of two different alumina powder compacts

    Directory of Open Access Journals (Sweden)

    Vaclav Pouchly

    2009-12-01

    Full Text Available Concept of Master Sintering Curve is a strong tool for optimizing sintering schedule. The sintering behaviour can be predicted, and sintering activation energy can be calculated with the help of few dilatometric measurements. In this paper an automatic procedure was used to calculate Master Sintering Curves of two different alumina compacts. The sintering activation energies were determined as 640 kJ/mol for alumina with particle size of 240 nm, respective 770 kJ/mol for alumina with particle size of 110 nm. The possibility to predict sintering behaviour with the help of Master Sintering Curve was verified.

  15. Nano boron nitride flatland.

    Science.gov (United States)

    Pakdel, Amir; Bando, Yoshio; Golberg, Dmitri

    2014-02-07

    Recent years have witnessed many breakthroughs in research on two-dimensional (2D) nanomaterials, among which is hexagonal boron nitride (h-BN), a layered material with a regular network of BN hexagons. This review provides an insight into the marvellous nano BN flatland, beginning with a concise introduction to BN and its low-dimensional nanostructures, followed by an overview of the past and current state of research on 2D BN nanostructures. A comprehensive review of the structural characteristics and synthetic routes of BN monolayers, multilayers, nanomeshes, nanowaves, nanoflakes, nanosheets and nanoribbons is presented. In addition, electronic, optical, thermal, mechanical, magnetic, piezoelectric, catalytic, ecological, biological and wetting properties, applications and research perspectives for these novel 2D nanomaterials are discussed.

  16. Zirconium nitride hard coatings

    International Nuclear Information System (INIS)

    Roman, Daiane; Amorim, Cintia Lugnani Gomes de; Soares, Gabriel Vieira; Figueroa, Carlos Alejandro; Baumvol, Israel Jacob Rabin; Basso, Rodrigo Leonardo de Oliveira

    2010-01-01

    Zirconium nitride (ZrN) nanometric films were deposited onto different substrates, in order to study the surface crystalline microstructure and also to investigate the electrochemical behavior to obtain a better composition that minimizes corrosion reactions. The coatings were produced by physical vapor deposition (PVD). The influence of the nitrogen partial pressure, deposition time and temperature over the surface properties was studied. Rutherford backscattering spectrometry (RBS), X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), scanning electron microscopy (SEM) and corrosion experiments were performed to characterize the ZrN hard coatings. The ZrN films properties and microstructure changes according to the deposition parameters. The corrosion resistance increases with temperature used in the films deposition. Corrosion tests show that ZrN coating deposited by PVD onto titanium substrate can improve the corrosion resistance. (author)

  17. Sintering characteristics of nano-ceramic coatings

    NARCIS (Netherlands)

    de Hosson, J.T.M.; Popma, R.

    2003-01-01

    This paper concentrates on sintering characteristics of nano-sized ceramic SiO2 particles. The sintering process is studied as a function of temperature using a conventional furnace and using a laser beam. The underlying idea is to combine the nanoceramic sol-gel concept with inkjet technology and

  18. Mechanical characteristics of microwave sintered silicon carbide

    Indian Academy of Sciences (India)

    In firing of products by conventionally sintered process, SiC grain gets oxidized producing SiO2 (∼ 32 wt%) and deteriorates the quality of the product substantially. Partially sintered silicon carbide by such a method is a useful material for a varieties of applications ranging from kiln furniture to membrane material.

  19. Kinetic analysis of boron carbide sintering

    International Nuclear Information System (INIS)

    Borchert, W.; Kerler, A.R.

    1975-01-01

    The kinetics of the sintering of boron carbide were investigated by shrinkage measurements with a high-temperature dilatometer under argon atmosphere in dependence on temperature, grain size, and pressure. The activation energies and the reaction mechanisms of the different stages of sintering were determined. (orig.) [de

  20. Electro sinter forging of titanium disks

    DEFF Research Database (Denmark)

    Cannella, Emanuele; Nielsen, Chris Valentin; Bay, Niels Oluf

    Electro sinter forging (ESF) is a new sintering process based on the principle of electrical Joule heating. In the present work, middle frequency direct current (MFDC) was flowing through the powder compact, which was under mechanical pressure. The main parameters are the high electrical current,...

  1. Sintering of ultra high molecular weight polyethylene

    Indian Academy of Sciences (India)

    Abstract. Ultra high molecular weight polyethylene (UHMWPE) is a high performance polymer having low coefficient of friction, good abrasion resistance, good chemical ... In this study, we report our results on compaction and sintering behaviour of two grades of UHMWPE with reference to the powder morphology, sintering ...

  2. Sintered-to-size FBR fuel

    International Nuclear Information System (INIS)

    Rasmussen, D.E.; Schaus, P.S.

    1984-04-01

    Fabrication of sintered-to-size PuO 2 -UO 2 fuel pellets was completed for testing of proposed FBR product specifications. Approximately 6000 pellets were fabricated to two nominal diameters and two densities by cold pressing and sintering to size. Process control and correlation between test and production batches are discussed

  3. Sintering of zirconia in high-pressure

    International Nuclear Information System (INIS)

    Kunrath, A.O.; Strohaecker, T.R.; Pereira, A.S.; Jornada, J.A.H. da; Piermarini, G.J.

    1989-01-01

    A systematic study about the sintering of zirconia hyperfines powders in high-pressure is presented. The differents conditions effect of sintering in microstructure and in hardness and tenacity properties of zirconia samples with a very fine grain is also studied. (C.G.C.) [pt

  4. Modeling the microstructural evolution during constrained sintering

    DEFF Research Database (Denmark)

    Bjørk, Rasmus; Frandsen, Henrik Lund; Tikare, V.

    A numerical model able to simulate solid state constrained sintering of a powder compact is presented. The model couples an existing kinetic Monte Carlo (kMC) model for free sintering with a finite element (FE) method for calculating stresses on a microstructural level. The microstructural respon...

  5. Modeling the Microstructural Evolution During Constrained Sintering

    DEFF Research Database (Denmark)

    Bjørk, Rasmus; Frandsen, Henrik Lund; Pryds, Nini

    2015-01-01

    A numerical model able to simulate solid-state constrained sintering is presented. The model couples an existing kinetic Monte Carlo model for free sintering with a finite element model (FEM) for calculating stresses on a microstructural level. The microstructural response to the local stress as ...

  6. Mechanical characteristics of microwave sintered silicon carbide

    Indian Academy of Sciences (India)

    Unknown

    Central Glass and Ceramic Research Institute, Kolkata 700 032, India. Abstract. The present work deals with the sintering of ... recently become an attractive area of research and deve- lopment. The major advantages of ... without the usage of sintering aids (Lee and Case 1999;. Goldstein et al 1999). Several studies have ...

  7. THE POLARIZING EFFECTS IN SINTERED KAOLIN

    African Journals Online (AJOL)

    compacted and sintered density of the ceramic have been studied, and a density — pressure relationship for before- and after-sintering conditions obtained. INTRODUCTION. Ceramics have been known to mankind for thousands of years, and have been used in construction materials. In many applications, ceramics have.

  8. The Influence of Sintering Temperature of Reactive Sintered (Ti, MoC-Ni Cermets

    Directory of Open Access Journals (Sweden)

    Marek Jõeleht

    2015-09-01

    Full Text Available Titanium-molybdenum carbide nickel cermets ((Ti, MoC-Ni were produced using high energy milling and reactive sintering process. Compared to conventional TiC-NiMo cermet sintering the parameters for reactive sintered cermets vary since additional processes are present such as carbide synthesis. Therefore, it is essential to acquire information about the suitable sintering regime for reactive sintered cermets. One of the key parameters is the final sintering temperature when the liquid binder Ni forms the final matrix and vacancies inside the material are removed. The influence of the final sintering temperature is analyzed by scanning electron microscopy. Mechanical properties of the material are characterized by transverse rupture strength, hardness and fracture toughness.DOI: http://dx.doi.org/10.5755/j01.ms.21.3.7179

  9. A comparative approach to synthesis and sintering of alumina/yttria nanocomposite powders using different precipitants

    Energy Technology Data Exchange (ETDEWEB)

    Kafili, G. [Department of Nanotechnology Engineering, Faculty of Advanced Sciences and Technologies, University of Isfahan, Isfahan, 81746-73441 (Iran, Islamic Republic of); Movahedi, B., E-mail: b.movahedi@ast.ui.ac.ir [Department of Nanotechnology Engineering, Faculty of Advanced Sciences and Technologies, University of Isfahan, Isfahan, 81746-73441 (Iran, Islamic Republic of); Milani, M. [Faculty of Advanced Materials and Renewable Energy Research Center, Tehran (Iran, Islamic Republic of)

    2016-11-01

    Alumina/yttria nanocomposite powder as an yttrium aluminum garnet (YAG) precursor was synthesized via partial wet route using urea and ammonium hydrogen carbonate (AHC) as precipitants, respectively. The products were characterized using X-ray diffraction, field-emission scanning electron microscopy, transmission electron microscopy, Fourier transform infrared spectroscopy and energy dispersive spectroscopy. The use of urea produced very tiny spherical Y-compounds with chemical composition of Y{sub 2}(CO{sub 3}){sub 3}·nH{sub 2}O, which were attracted to the surface of alumina nanoparticles and consequently, a core-shell structure was obtained. The use of ammonium hydrogen carbonate produced sheets of Y-compounds with chemical composition of Y(OH)CO{sub 3} covering the alumina nanoparticles. A fine-grained YAG ceramic (about 500 nm), presenting a non-negligible transparency (45% RIT at IR range) was obtained by the spark plasma sintering (SPS) of alumina-yttria nanocomposite synthesized in the urea system. This amount of transmission was obtained by only the sintering of the powder specimen without any colloidal forming process before sintering or adding any sintering aids or dopant elements. However, by spark plasma sintering of alumina-yttria nanocomposite powder synthesized in AHC system, an opaque YAG ceramic with an average grain size of 1.2 μm was obtained. - Highlights: • Urea proved to be an appropriate precipitant for obtaining a core-shell alumina/yttria nanocomposite. • Alumina/yttria nanocomposite powders with more appropriate morphology and highly sinterability. • A fine-grained YAG ceramic was obtained by SPS of alumina-yttria nanocomposite.

  10. Sintered ceramics having controlled density and porosity

    International Nuclear Information System (INIS)

    Brassfield, H.C.; DeHollander, W.R.; Nivas, Y.

    1980-01-01

    A new method was developed for sintering ceramic uranium dioxide powders, in which ammonium oxalate is admixed with the powder prior to being pressed into a cylindrical green body, so that the end-point density of the final nuclear-reactor fuel product can be controlled. When the green body is heated, the ammonium oxalate decomposes and leaves discrete porosity in the sintered body, which corresponds to the ammonium oxalate regions in the green body. Thus the end-point density of the sintered body is a function of the amount of ammonium oxalate added. The final density of the sintered product is about 90-97% of the theoretical. The addition of ammonium oxalate also allows control of the pore size and distribution throughout the fuel. The process leaves substantially no impurities in the sintered strucuture. (DN)

  11. Aluminum reference electrode

    Science.gov (United States)

    Sadoway, Donald R.

    1988-01-01

    A stable reference electrode for use in monitoring and controlling the process of electrolytic reduction of a metal. In the case of Hall cell reduction of aluminum, the reference electrode comprises a pool of molten aluminum and a solution of molten cryolite, Na.sub.3 AlF.sub.6, wherein the electrical connection to the molten aluminum does not contact the highly corrosive molten salt solution. This is accomplished by altering the density of either the aluminum (decreasing the density) or the electrolyte (increasing the density) so that the aluminum floats on top of the molten salt solution.

  12. Experimental study of trimethyl aluminum decomposition

    Science.gov (United States)

    Zhang, Zhi; Pan, Yang; Yang, Jiuzhong; Jiang, Zhiming; Fang, Haisheng

    2017-09-01

    Trimethyl aluminum (TMA) is an important precursor used for metal-organic chemical vapor deposition (MOCVD) of most Al-containing structures, in particular of nitride structures. The reaction mechanism of TMA with ammonia is neither clear nor certain due to its complexity. Pyrolysis of trimethyl metal is the start of series of reactions, thus significantly affecting the growth. Experimental study of TMA pyrolysis, however, has not yet been conducted in detail. In this paper, a reflectron time-of-flight mass spectrometer is adopted to measure the TMA decomposition from room temperature to 800 °C in a special pyrolysis furnace, activated by soft X-ray from the synchrotron radiation. The results show that generation of methyl, ethane and monomethyl aluminum (MMA) indicates the start of the pyrolysis process. In the low temperature range from 25 °C to 700 °C, the main product is dimethyl aluminum (DMA) from decomposition of TMA. For temperatures larger than 700 °C, the main products are MMA, DMA, methyl and ethane.

  13. Designing a Tool System for Lowering Friction during the Ejection of In-Die Sintered Micro Gears

    DEFF Research Database (Denmark)

    Cannella, Emanuele; Nielsen, Emil Krabbe; Stolfi, Alessandro

    2017-01-01

    is affected by the influence of friction during the ejection phase, caused by radial expansion of the compacted and sintered powder. This paper presents the development of a pre-stressed tool system for the manufacture of micro gears made of aluminum. By using the hot isostatic pressing (HIP) sintering......The continuous improvements in micro-forging technologies generally involve process, material, and tool design. The field assisted sintering technique (FAST) is a process that makes possible the manufacture of near-net-shape components in a closed-die setup. However, the final part quality...... process and different combinations of process parameters, the designed tool system was compared to a similar tool system designed without a pre-stressing strategy. The comparison between the two tool systems was based on the ejection force and part fidelity. The ejection force was measured during...

  14. Adsorption of sugars on Al- and Ga-doped boron nitride surfaces: A computational study

    Energy Technology Data Exchange (ETDEWEB)

    Darwish, Ahmed A. [Center for Nanotechnology, Zewail City of Science and Technology, Giza 12588 (Egypt); Department of Nuclear and Radiation Engineering, Faculty of Engineering, Alexandria University, Alexandria (Egypt); Fadlallah, Mohamed M. [Center for Fundamental Physics, Zewail City of Science and Technology, Giza 12588 (Egypt); Department of Physics, Faculty of Science, Benha University, Benha (Egypt); Badawi, Ashraf [Center for Nanotechnology, Zewail City of Science and Technology, Giza 12588 (Egypt); Maarouf, Ahmed A., E-mail: ahmed.maarouf@egnc.gov.eg [Center for Fundamental Physics, Zewail City of Science and Technology, Giza 12588 (Egypt); Egypt Nanotechnology Center & Department of Physics, Faculty of Science, Cairo University, Giza 12613 (Egypt)

    2016-07-30

    Highlights: • Doping boron nitride sheets with aluminum or gallium atoms significantly enhances their molecular adsorption properties. • Adsorption of glucose or glucosamine on Al- and Ga-doped boron nitride sheets changes the band gap. • Doping concentration changes the bad gap, but has a minor effect on the adsorption energy. - Abstract: Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets (h-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on h-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-doped boron nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

  15. Application of Silicon Nitride (Si3N4 Ceramics in Ball Bearing

    Directory of Open Access Journals (Sweden)

    Wijianto Wijianto

    2016-08-01

    operation up to 1000°C, greater thermal shock resistance, lower density and low thermal expansion. This properties gives some benefit for ball bearing material such as higher running speed, reduce vibration of the shaft, will improve the life time and maintenance cost, lower heat generated, less energy consumption, lower wear rate, reducing noise level and reduce of using lubricant. The sintering methods are used to produce ball bearing from silicon nitride. Some techniques can be applied to increase ceramics strength which are reduce porosity, reduce grain size, reduce surface flaw and proof stressing. The surface finishing of the ceramic bearing is very important because silicon nitride as a brittle material, its strength is limited to the flaw sizes especially the flaw at the surface.

  16. Plasmonic titanium nitride nanostructures for perfect absorbers

    DEFF Research Database (Denmark)

    Guler, Urcan; Li, Wen-Wei; Kinsey, Nathaniel

    2013-01-01

    We propose a metamaterial based perfect absorber in the visible region, and investigate the performance of titanium nitride as an alternative plasmonic material. Numerical and experimental results reveal that titanium nitride performs better than gold as a plasmonic absorbing material...

  17. A comparative study of nitride purity and Am fabrication losses in PuN materials by the powder and internal gelation production routes

    Energy Technology Data Exchange (ETDEWEB)

    Hedberg, Marcus, E-mail: marhed@chalmers.se; Ekberg, Christian

    2016-12-15

    Fabrication of plutonium containing fuels through the internal gelation method has mostly been studied in mixed metal systems such as U, Pu or Zr,Pu. In this work production of undiluted PuN has been performed by carbothermal reduction on both oxide powder and Pu microspheres produced by the internal gelation method. Nitride purities reached using the different methods have been studied together with final densities achieved during pellet fabrication as well as losses of ingrown Am during the different production steps. Formation of Pu microspheres was successfully performed using the internal gelation method, although extensive microsphere fracturing occurred during thermal treatment. Final densities of PuN pellets produced by cold pressing and sintering reached 70–80% of theoretical density. Am losses during the carbothermal reduction step was on average about 3.7%. After sintering about 11% of Am was lost in total through the entire production process if sintering in N{sub 2} + 5% H{sub 2} atmosphere while about 50% of the Am in total was lost when using Ar as sintering atmosphere. - Highlights: • Internal gelation Pu based sols was performed. • Nitride formation by carbothermal reduction on Pu microspheres and powders was performed. • Pelletization and sintering of pellets was performed. • Am losses were measured throughout the production steps.

  18. A Thermodynamic Model to Estimate the Formation of Complex Nitrides of Al x Mg(1-x)N in Silicon Steel

    Science.gov (United States)

    Luo, Yan; Zhang, Lifeng; Li, Ming; Sridhar, Seetharaman

    2018-03-01

    A complex nitride of Al x Mg(1-x)N was observed in silicon steels. A thermodynamic model was developed to predict the ferrite/nitride equilibrium in the Fe-Al-Mg-N alloy system, using published binary solubility products for stoichiometric phases. The model was used to estimate the solubility product of nitride compound, equilibrium ferrite, and nitride compositions, and the amounts of each phase, as a function of steel composition and temperature. In the current model, the molar ratio Al/(Al + Mg) in the complex nitride was great due to the low dissolved magnesium in steel. For a steel containing 0.52 wt pct Als, 10 ppm T.Mg., and 20 ppm T.N. at 1100 K (827 °C), the complex nitride was expressed by Al0.99496Mg0.00504N and the solubility product of this complex nitride was 2.95 × 10-7. In addition, the solution temperature of the complex nitride increased with increasing the nitrogen and aluminum in steel. The good agreement between the prediction and the detected precipitate compositions validated the current model.

  19. Evaluation and silicon nitride internal combustion engine components. Final report, Phase I

    Energy Technology Data Exchange (ETDEWEB)

    Voldrich, W. [Allied-Signal Aerospace Co., Torrance, CA (United States). Garrett Ceramic Components Div.

    1992-04-01

    The feasibility of silicon nitride (Si{sub 3}N{sub 4}) use in internal combustion engines was studied by testing three different components for wear resistance and lower reciprocating mass. The information obtained from these preliminary spin rig and engine tests indicates several design changes are necessary to survive high-stress engine applications. The three silicon nitride components tested were valve spring retainers, tappet rollers, and fuel pump push rod ends. Garrett Ceramic Components` gas-pressure sinterable Si{sub 3}N{sub 4} (GS-44) was used to fabricate the above components. Components were final machined from densified blanks that had been green formed by isostatic pressing of GS-44 granules. Spin rig testing of the valve spring retainers indicated that these Si{sub 3}N{sub 4} components could survive at high RPM levels (9,500) when teamed with silicon nitride valves and lower spring tension than standard titanium components. Silicon nitride tappet rollers showed no wear on roller O.D. or I.D. surfaces, steel axles and lifters; however, due to the uncrowned design of these particular rollers the cam lobes indicated wear after spin rig testing. Fuel pump push rod ends were successful at reducing wear on the cam lobe and rod end when tested on spin rigs and in real-world race applications.

  20. Titanium Powder Sintering in a Graphite Furnace and Mechanical Properties of Sintered Parts

    Directory of Open Access Journals (Sweden)

    Changzhou Yu

    2017-02-01

    Full Text Available Recent accreditation of titanium powder products for commercial aircraft applications marks a milestone in titanium powder metallurgy. Currently, powder metallurgical titanium production primarily relies on vacuum sintering. This work reported on the feasibility of powder sintering in a non-vacuum furnace and the tensile properties of the as-sintered Ti. Specifically, we investigated atmospheric sintering of commercially pure (C.P. titanium in a graphite furnace backfilled with argon and studied the effects of common contaminants (C, O, N on sintering densification of titanium. It is found that on the surface of the as-sintered titanium, a severely contaminated porous scale was formed and identified as titanium oxycarbonitride. Despite the porous surface, the sintered density in the sample interiors increased with increasing sintering temperature and holding time. Tensile specimens cut from different positions within a large sintered cylinder reveal different tensile properties, strongly dependent on the impurity level mainly carbon and oxygen. Depending on where the specimen is taken from the sintered compact, ultimate tensile strength varied from 300 to 580 MPa. An average tensile elongation of 5% to 7% was observed. Largely depending on the interstitial contents, the fracture modes from typical brittle intergranular fracture to typical ductile fracture.

  1. Thermodynamics and mechanisms of sintering

    International Nuclear Information System (INIS)

    Pask, J.A.

    1978-10-01

    A phenomenological overview and exploration of the thermodynamic and geometric factors play a role in the process of densification of model compact systems consisting of crystalline spheres of uniform size in regular and irregular packing that form grain boundaries at every contact point. A further assumption is the presence of isotropic surface and grain boundary energies. Although such systems are unrealistic in comparison with normal powder compacts, their potential sintering behavior can be analyzed and provided with a limiting set of behavior conditions which can be looked upon as one boundary condition. This approach is logically realistic since it is easier to understand and provide a basis for understanding the more complex real powder systems

  2. Melting and Sintering of Ashes

    DEFF Research Database (Denmark)

    Hansen, Lone Aslaug

    1997-01-01

    , the biggest deviations being found for salt rich (i.e. straw derived) ashes.A simple model assuming proportionality between fly ash fusion and deposit formation was found to be capable of ranking deposition rates for the different straw derived fly ashes, whereas for the fly ashes from coal/straw co......-firing, the model only had a qualitative agreement with the measured ash deposit formation rates.Sintering measurements were carried out by means of compression strength testing of ash pellets. This method showed to not be applicable for the salt rich fly ash derived from straw combustion. For the fly ashes...... have been employed in a simple model for prediction of ash deposit formation, the results of which have been compared to ash deposition formation rates measured at the respective boilers.The ash fusion results were found to directly reflect the ash compositional data:a) Fly ashes and deposits from...

  3. Thermochemical stability of zirconia-titanium nitride as mixed ionic-electronic composites

    DEFF Research Database (Denmark)

    Silva, P. S. M.; Esposito, V.; Marani, D.

    2018-01-01

    Dense zirconia (8% molar yttria-stabilized ZrO2)-titanium nitride (TiN) composites are fabricated to obtain mixed ionic-electronic conducting ceramic systems with high degree of electronic and thermal conductivity. The composites are consolidated by spark plasma sintering (SPS), starting from pure...... the composites, high electrical conductivity is attained. Samples exhibit metallic behavior, showing an unexpected percolation of TiN in the YSZ matrix for volume fraction ≤ 25 wt% (27 vol%). Chemical degradation and electrical properties of the compounds were monitored under oxidative (air) and inert (Ar...

  4. Electrical Activation Studies of Silicon Implanted Aluminum Gallium Nitride with High Aluminum Mole Fraction

    Science.gov (United States)

    2007-12-01

    Marciniak, T. Zens, E. Moore, R. Hengehold Stiener. “ Electrica 283 Implanted AlxGa1-xN,” Journal of Electromagnetic Materials, 35(4): 647-653 36...Proceedings of the 2001:125-130 (2001). 286 68. Fellows, James A., Y. K. Yeo, Mee-Yi Ryu, and R. L. Hengehold. “ Electrica and Optical Activation

  5. Science of sintering and its future

    International Nuclear Information System (INIS)

    Ristic, M.M.

    1975-01-01

    Some new books published by M.Yu. Baljshin, V.A. Ivensen, V.V. Skorohod and others are characterized by the wish to give a complete approach to the problems of sintering theory. Bearing just this in mind while writing the book ''An Essay on the Generalization of Sintering Theory'' (G.V.Samsonov, M.M. Ristic with the collaborators) an idea was born: to ask the most eminent scientists in this field to present their own opinions on the theme ''The Science of Sintering and Modern Views on its Future''. There were formed 18 questions, given in the appendix to be answered. The received answers were presented in 10 chapters of this book. The fourth part of the book consists of papers of eminent scientists engaged in the field of sintering science (some of which were published here for the first time). This material is published in the book with the consent of the authors and these original contributions provide a more profound knowledge of sintering. The initial idea, that the book should have a monograph character and in which the answers would serve as some data on the latest notions of the science of sintering, was somewhat changed since the original opinions of individual scientists are given in the book and these, are sometimes very contradictory. This, in fact, gives the book a special charm because the unsolved problems in the science of sintering are most evidently stressed in this way

  6. Spark plasma sintering of cBN(core/SiO2(shell powder prepared by rotary chemical vapor deposition

    Directory of Open Access Journals (Sweden)

    Jianfeng Zhang

    2014-09-01

    Full Text Available SiO2 nanolayer coated cubic boron nitride (cBN, cBN(core/SiO2(shell powder, was prepared by rotary chemical vapor deposition. The cBN/SiO2 powder was densified by spark plasma sintering at 1873 K for 0.3 ks. The hexagonal boron nitride (hBN phase was not observed in the cBN–SiO2 composites, indicating that the SiO2 nanolayer depressed the phase transformation from cBN to hBN. The relative density of cBN–SiO2 increased with increasing SiO2 content (CSiO2. The highest hardness of the cBN–SiO2 composite was 17.5 GPa at CSiO2=38 wt% and a load of 0.98 N.

  7. Alumina-zirconium ceramics synthesis by selective laser sintering/melting

    International Nuclear Information System (INIS)

    Shishkovsky, I.; Yadroitsev, I.; Bertrand, Ph.; Smurov, I.

    2007-01-01

    In the present paper, porous refractory ceramics synthesized by selective laser sintering/melting from a mixture of zirconium dioxide, aluminum and/or alumina powders are subjected to optical metallography and X-ray analysis to study their microstructure and phase composition depending on the laser processing parameters. It is shown that high-speed laser sintering in air yields ceramics with dense structure and a uniform distribution of the stabilizing phases. The obtained ceramic-matrix composites may be used as thermal and electrical insulators and wear resistant coating in solid oxide fuel cells, crucibles, heating elements, medical tools. The possibility to reinforce refractory ceramics by laser synthesis is shown on the example of tetragonal dioxide of zirconium with hardened micro-inclusion of Al 2 O 3 . By applying finely dispersed Y 2 O 3 powder inclusions, the type of the ceramic structure is significantly changed

  8. Immobilization of Uranium Silicides in Sintered Glass

    International Nuclear Information System (INIS)

    Mateos, P.; Russo, D.O.; Heredia, A.D.; Sanfilippo, M.

    2003-01-01

    High activity nuclear spent fuels vitrification by fusion is a well known technology which has industrial scale in France, England, Japan, EEUU. Borosilicates glasses are used in this process.Sintered glasses are an alternative to the immobilization task in which there is also a wide experience around the world.The available technics are: cold pressing and sintering , hot-pressing and hot isostatic pressing.This work compares Borosilicates and Iron silicates sintered glasses behaviour when different ammounts of nuclear simulated waste is added

  9. Solidification of HLLW into sintered ceramics

    International Nuclear Information System (INIS)

    O-Oka, K.; Ohta, T.; Masuda, S.; Tsunoda, N.

    1979-01-01

    Simulated HLLW from the PNC reprocessing plant at Tokai was solidified into sintered ceramics by normal sintering or hot-pressing with addition of some oxides. Among various ceramic products obtained so far, the most preferable was nepheline-type sintered solids formed with addition of SiO 2 and Al 2 O 3 to the simulated waste calcine. The solid shows advantageous properties in leach rate and mechanical strength, which suggest that the ceramic solids were prepared with additions of ZrO 2 or MnO 2 , and some of them showed good characteristics

  10. Effect of sintering temperature and heating mode on consolidation of ...

    Indian Academy of Sciences (India)

    Microwave sintering was performed in 2.45 GHz multimode microwave furnace at temperatures ranging from 570–630 °C. Microwave sintering at a heating rate of as high as 22°C/min resulted in ∼55% reduction of processing time as compared to conventional sintering. A lower sintered density observed in the case of ...

  11. Nitride image intensifiers

    Science.gov (United States)

    Glesener, J. W.; Dabiran, A. M.; Estrera, J. P.

    2009-05-01

    Nitride based photocathodes for image intensifiers are of interest because of the wide span of wavelengths covered by the bandgap of the AlGaInN alloy system. The potential bandgap range for this alloy system is from 6.2 eV for AlN to 0.7 eV for InN. Coupled with microchannel plate technology, this alloy system potentially offers low noise and high gain image intensifiers over a wide wavelength range. Results from L-3 EOS work in this area are presented beginning with a brief summary of unpublished early work carried out from 1992 - 1997 on AlGaN image intensifiers. The early work wrestled with the dual issues of sealing image intensifiers along with improving the quality of the AlGaN epitaxy layer. This is followed by our current results on a GaN image intensifier sealed with a photocathode from SVTA. Imagery using 375nm LED illumination is shown. The quantum efficiency at 300nm was estimated to be 16% measured in transmission mode. This QE was achieved with a 0.15μm thick Mg doped GaN active layer.

  12. Nitrides and carbides of molybdenum and tungsten with high specific-surface area: their synthesis, structure, and catalytic properties

    International Nuclear Information System (INIS)

    Volpe, L.

    1985-01-01

    Temperature-programmed reactions between trioxides of molybdenum or tungsten and ammonia provide a new method to synthesize dimolybdenum and ditungsten nitrides with specific surface areas to two-hundred-and-twenty and ninety-one square meters per gram, respectively. These are the highest values on record for any unsupported metallic powders. They correspond to three-four nonometer particles. The reaction of molybdenum trioxide with ammonia is topotactic in the sense that one-zero-zero planes of dimolybdenum nitride are parallel to zero-one-zero planes of molybdenum trioxide. As the trioxide transforms, it passes through an oxynitride intermediate with changing bulk structure and increasing surface area and extent of reduction. The nitride product consists of platelets, pseudomorphous with the original trioxide, which can be regarded as highly porous defect single crystals. By treating small particles of dimolybdenum or ditungsten nitride with methane-dihydrogen mixtures it is possible to replace interstitial nitrogen atoms by carbon atoms, without sintering, and thus to prepare carbides of molybdenum and tungsten with very high specific surface areas. Molybdenum nitride powders catalyze ammonia synthesis. A pronounced increase in the catalytic activity with increasing particle size confirms the structure-sensitive character of this reaction

  13. Simulation of the Nitriding Process

    Science.gov (United States)

    Krukovich, M. G.

    2004-01-01

    Simulation of the nitriding process makes it possible to solve many practical problems of process control, prediction of results, and development of new treatment modes and treated materials. The presented classification systematizes nitriding processes and processes based on nitriding, enables consideration of the theory and practice of an individual process in interrelation with other phenomena, outlines ways for intensification of various process variants, and gives grounds for development of recommendations for controlling the structure and properties of the obtained layers. The general rules for conducting the process and formation of phases in the layer and properties of the treated surfaces are used to create a prediction computational model based on analytical, numerical, and empirical approaches.

  14. Highly transparent Tb3Al5O12 magneto-optical ceramics sintered from co-precipitated powders with sintering aids

    Science.gov (United States)

    Dai, Jiawei; Pan, Yubai; Xie, Tengfei; Kou, Huamin; Li, Jiang

    2018-04-01

    Highly transparent terbium aluminum garnet (Tb3Al5O12, TAG) magneto-optical ceramics were fabricated from co-precipitated nanopowders with tetraethoxysilane (TEOS) as sintering aid by vacuum sintering combined with hot isostatic pressing (HIP) post-treatment. The ball milled TAG powder shows better dispersity than the as-synthesized powder, and its average particle size is about 80 nm. For the ceramic sample pre-sintered at 1720 °C for 20 h with HIP post-treated at 1700 °C for 3 h, the in-line transmittance exceeds 76% in the region of 400-1580nm (except the absorption band), reaching a maximum value of 81.8% at the wavelength of 1390 nm. The microstructure of the TAG ceramic is homogeneous and its average grain size is approximately 19.7 μm. The Verdet constant of the sample is calculated to be -182.7 rad·T-1·m-1 at room temperature.

  15. Leaching of aluminum and iron from boiler slag generated from a typical Chinese Steel Plant.

    Science.gov (United States)

    Li, Jinping; Gan, Jinhua; Li, Xianwang

    2009-07-30

    This paper presents a new way of recycling aluminum and iron in boiler slag derived from coal combustion plants, which integrates efficient extraction and reuse of the leached pellets together. The boiler slag was pelletized together with washed coal and lime prior to sintering and then was sintered at 800-1200 degrees C for different periods to produce sintered pellets for the leaching test. An elemental analysis of aqueous solutions leached by sulfuric acid was determined by EDTA-Na(2)-ZnCl(2) titration method. The components and microstructures of the samples, sintered pellets and leached residue were examined by means of XRF, XRD and SEM. XRD analysis indicates that predominate minerals such as kaolinite, quartz, calcium silicide, hematate and metakoalin exist in the boiler slag. An aluminum extraction efficiency of 86.50% was achieved. The maximum extraction efficiency of Fe was 94.60% in the same conditions of that for the maximum extraction efficiency of Al. The extraction efficiencies of Al and Fe increased with an increase in temperature, leaching time and acidity. High Al extraction efficiency was obtained for pellets with high CaO content. The final product of alumina would be used directly for the production of metallic aluminum.

  16. U3O8 microspheres sintering kinetics

    International Nuclear Information System (INIS)

    Godoy, A.L.E.

    1986-01-01

    U 3 O 8 microspheres sintering kinetics was determined using a hot-stage optical microscopy apparatus, able to reach temperature up to 1350 0 C in controlled atmospheres. The sintered material had its microstructure analysed by optical and electron microscopy. The microspheres were characterized initialy utilizing X-ray diffractometry and thermogravimetry. The equation which describes the microspheres shrinkage in function of the time was obtained using finite difference analysis X-ray diffractometry indicated hexagonal structure for the microspheres main starting material, ammonium diuranate thermogravimetric analysis showed reduction of this material to U 3 O 8 at 600 0 C. Ceramography results showed 5 hours sintered microspheres grain sizes G vary with the temperature. Sintered U 3 O 8 micrographs compared with published results for UO 2 , indicate similar homogeneity microstructural characteristics and suggest the processed micorspheres to be potentially useful as nuclear fuels. (Author) [pt

  17. Space-confined preparation of high surface area tungsten oxide and tungsten nitride inside the pores of mesoporous silica SBA-15

    DEFF Research Database (Denmark)

    Meyer, Simon; Beyer, Hans; Köhler, Klaus

    2015-01-01

    For the direct preparation of high surface area nitride materials, a lack of suitable precursors exists. Indirect preparation by gas phase nitridation (e.g. by ammonia) requires high temperatures and often results in sintering. The present work demonstrates that the space-confined preparation of W2......N inside the pores of ordered mesoporous silica SBA-15 offers a possibility to reduce sintering phenomena and thus to obtain smaller particles, porous structures and a higher surface area material. The preparation was pursued in a two-step approach. First, WO3 was introduced into the channels of SBA......-15 and second, ammonolysis was conducted for its conversion to W2N. When performed in the presence of the exo-template, SBA-15 acts as a stabilizer and small W2N particles (6-7 nm) with a high specific surface area (40 m(2) g(-1)) are obtained after template removal. When the template is, however...

  18. Elimination of aluminum adjuvants.

    Science.gov (United States)

    Hem, Stanley L

    2002-05-31

    In vitro dissolution experiments although perhaps not at typical body concentrations and temperatures demonstrated that the alpha-hydroxycarboxylic acids present in interstitial fluid (citric acid, lactic acid, and malic acid) are capable of dissolving aluminum-containing adjuvants. Amorphous aluminum phosphate adjuvant dissolved more rapidly than crystalline aluminum hydroxide adjuvant. Intramuscular administration in New Zealand White rabbits of aluminum phosphate and aluminum hydroxide adjuvants, which were labelled with 26Al, revealed that 26Al was present in the first blood sample (1 h) for both adjuvants. The area under the blood level curve for 28 days indicated that three times more aluminum was absorbed from aluminum phosphate adjuvant than aluminum hydroxide adjuvant. In vivo studies using 26Al-labelled adjuvants are relatively safe because accelerator mass spectrometry (AMS) can quantify quantities of 26Al as small as 10(-17) g. A similar study in humans would require a whole-body exposure of 0.7 microSv per year compared to the natural background exposure of 3000 microSv per year. The in vitro dissolution and in vivo absorption studies indicate that aluminum-containing adjuvants which are administered intramuscularly are dissolved by alpha-hydroxycarboxylic acids in interstitial fluid, absorbed into the blood, distributed to tissues, and eliminated in the urine.

  19. Thermal barrier coating resistant to sintering

    Science.gov (United States)

    Subramanian, Ramesh; Seth, Brij B.

    2004-06-29

    A device (10) is made, having a ceramic thermal barrier coating layer (16) characterized by a microstructure having gaps (18) with a sintering inhibiting material (22) disposed on the columns (20) within the gaps (18). The sintering resistant material (22) is stable over the range of operating temperatures of the device (10), is not soluble with the underlying ceramic layer (16) and is applied by a process that is not an electron beam physical vapor deposition process.

  20. Effect of compacting pressure, powder degassing and thermobaric treatment on densification and properties of nanocrystalline titanium nitride

    Directory of Open Access Journals (Sweden)

    Andrei V. Kapylou

    2009-09-01

    Full Text Available The effects of compacting pressure, powder degassing and high pressure sintering temperature and time on the densification and properties of nanocrystalline titanium nitride have been investigated. For this reason, TiN powder with a mean particle size of 55 nm was pressed in the range of compacting pressure from 0.2 to 1.0 GPa and sintered under static pressure of 3.5 GPa in the temperature range of 900–1600°C for 45–120 s. Some of green bodies were degassed in vacuum before sintering. It was shown that samples compacted in the pressure range of 0.2–0.6 GPa have the highest density after the thermobaric treatment. The maximum density (about 97.3 %TD was obtained with degassed samples. Microhardness and microstructure investigations have shown that recrystallization of the TiN nanopowder begins at the sintering temperatures of 1100–1200°C and sintering time less than one minute. The maximum microhardness obtained was 23.2±1.0 GPa and themaximum Young modulus was 370 GPa.

  1. Boron Nitride Nanoribbons from Exfoliation of Boron Nitride Nanotubes

    Science.gov (United States)

    Hung, Ching-Cheh; Hurst, Janet; Santiago, Diana

    2017-01-01

    Two types of boron nitride nanotubes (BNNTs) were exfoliated into boron nitride nanoribbons (BNNR), which were identified using transmission electron microscopy: (1) commercial BNNTs with thin tube walls and small diameters. Tube unzipping was indicated by a large decrease of the sample's surface area and volume for pores less than 2 nm in diameter. (2) BNNTs with large diameters and thick walls synthesized at NASA Glenn Research Center. Here, tube unraveling was indicated by a large increase in external surface area and pore volume. For both, the exfoliation process was similar to the previous reported method to exfoliate commercial hexagonal boron nitride (hBN): Mixtures of BNNT, FeCl3, and NaF (or KF) were sequentially treated in 250 to 350 C nitrogen for intercalation, 500 to 750 C air for exfoliation, and finally HCl for purification. Property changes of the nanosized boron nitride throughout this process were also similar to the previously observed changes of commercial hBN during the exfoliation process: Both crystal structure (x-ray diffraction data) and chemical properties (Fourier-transform infrared spectroscopy data) of the original reactant changed after intercalation and exfoliation, but most (not all) of these changes revert back to those of the reactant once the final, purified products are obtained.

  2. Synthesis and characterization of titanium-vanadium ternary nitride (Ti{sub x}V{sub 1}-xN).; Sintesis y caracterizacion del nitruro ternario de titanio y vanadio (Ti{sub x}V{sub 1}-xN)

    Energy Technology Data Exchange (ETDEWEB)

    Roldan, M. A.; Alcala, M. D.; Ortega, A.; Real, C.

    2011-07-01

    Titanium-Vanadium nitride (TiVN) has been prepared from carbothermal reduction of corresponding oxides and also by direct nitridation of a mix of two metals employing the ATVC method. The characterization of the final product by X-ray diffraction, scanning electron microscopy, electron energy loss (EELS), and X-ray absorption spectroscopy (XAS) is presented. The synthesis of the ternary nitride has been possible in all range of composition and the final product is obtained with nano metric particle size and a high microhardness after sintering. (Author) 58 refs.

  3. Influence of sintering atmosphere on the mechanical properties of steel P / M AISI 430L; Influencia de la atmosfera de sinterizacion en las propiedades mecanicas de los aceros P/M AISI 430L

    Energy Technology Data Exchange (ETDEWEB)

    Iglesias, F. J.; Martinez, C.; Costes, M. T.; Ruiz, J. M.; Garcia, L. E.; Corpas, F.

    2014-04-01

    It has studied the stainless steel powder metallurgy AISI 430L. It has compared the sintering in two different atmospheres; in vacuum, and in an atmosphere containing nitrogen. It has developed a heat treatment with the aim of improving the mechanical properties. This has been done through microstructural modification of complex nitrides of iron and chromium precipitates during the phase of sintering. Physical properties have been evaluated and are been performing a microstructural analysis for microstructure related to the increase in mechanical properties. (Author)

  4. Analysis of Laser Sintering Technology

    Directory of Open Access Journals (Sweden)

    Vladislav Markovič

    2014-02-01

    Full Text Available The new, high-tech development and customization is one ofthe most important factors in promoting the country‘s economicgrowth indicators. The economic downturn in the industryrequires technology and equipment using a minimumof raw materials and providing maximum performance. Thisstatement perfectly describes the innovative, forward-looking,cost-effective laser powder sintering (SLS technology. Here,thanks to the latest engineering achievements, product surfacesare modified and improved, they gain new characteristics. SLSis viable in automobile, engineering, construction, aerospace,aircraft, printing, medical and other areas.In order to create a product which meets the standards andtechnical documentation it is necessary to use and ensure highquality of raw materials, high-end equipment, qualified personnel,the working environment with proper climatic conditions, ergonomics,etc. But all of these, the quality of the product becomesthe decisive indicators meaningless if know how to properly selectthe laser processing operation. Scanning speed, beam power,pulse frequency, protective gases, powder layer thickness – allof them are the physical and mechanical characteristics of thechange in a small range changes the quality of the product of thefuture, the field of application and performance characteristics.

  5. Preparation process of boron nitride

    International Nuclear Information System (INIS)

    Mignani, G.; Ardaud, P.

    1990-01-01

    High purity boron nitride, without Si and a low carbon content, is prepared by pyrolysis, under an ammoniac atmosphere, of the reaction product between a B-trihalogenoborazole and a primary amine RNH 2 when R is a hydrocarbon radical eventually substituted containing from 1 to 6 carbon atoms inclusively [fr

  6. III-Nitride Based Optoelectronics

    Science.gov (United States)

    2010-01-01

    pp. 2917- 2919, Jun. 1992. 18. E. Mufioz, E. Monroy, J. A. Garrido, I. Izpura, F. J. Sanchez, M. A. Sanchez - Garcia, E. Calleja , B. Beaumont, and P...Pau, C. Rivera, J. Pereiro, E. Munoz, E. Calleja , U. Schiihle, E. Frayssinet, B. Beaumont, J. P. Faurie, and P. Gibart, "Nitride-based photodetectors

  7. Is the Aluminum Hypothesis Dead?

    Science.gov (United States)

    2014-01-01

    The Aluminum Hypothesis, the idea that aluminum exposure is involved in the etiology of Alzheimer disease, dates back to a 1965 demonstration that aluminum causes neurofibrillary tangles in the brains of rabbits. Initially the focus of intensive research, the Aluminum Hypothesis has gradually been abandoned by most researchers. Yet, despite this current indifference, the Aluminum Hypothesis continues to attract the attention of a small group of scientists and aluminum continues to be viewed with concern by some of the public. This review article discusses reasons that mainstream science has largely abandoned the Aluminum Hypothesis and explores a possible reason for some in the general public continuing to view aluminum with mistrust. PMID:24806729

  8. Solid-state sintering of tungsten heavy alloys

    International Nuclear Information System (INIS)

    Gurwell, W.E.

    1994-10-01

    Solid-state sintering is a technologically important step in the fabrication of tungsten heavy alloys. This work addresses practical variables affecting the sinterability: powder particle size, powder mixing, and sintering temperature and time. Compositions containing 1 to 10 micrometer (μM) tungsten (W) powders can be fully densified at temperatures near the matrix solidus. Blending with an intensifier bar provided good dispersion of elemental powders and good as-sintered mechanical properties under adequate sintering conditions. Additional ball milling increases powder bulk density which primarily benefits mold and die filling. Although fine, 1 μm W powder blends have high sinterability, higher as-sintered ductilities are reached in shorter sintering times with coarser, 5 μm W powder blends; 10μm W powder blends promise the highest as-sintered ductilities due to their coarse microstructural W

  9. Investigation of wear and tool life of coated carbide and cubic boron nitride cutting tools in high speed milling

    Directory of Open Access Journals (Sweden)

    Pawel Twardowski

    2015-06-01

    Full Text Available The objective of the investigation was analysis of the wear of milling cutters made of sintered carbide and of boron nitride. The article presents the life period of the cutting edges and describes industrial conditions of the applicability of tools made of the materials under investigation. Tests have been performed on modern toroidal and ball-end mill cutters. The study has been performed within a production facility in the technology of high speed machining of 55NiCrMoV6 and X153CrMoV12 hardened steel. The analysed cutting speed is a parameter which significantly influences the intensity of heat generated in the cutting zone. Due to the wear characteristics, two areas of applicability of the analysed tools have been distinguished. For vc  ≤ 300 m/min, sintered carbide edges are recommended; for vc  > 500 m/min, boron nitride edges. For 300 ≤ vc  ≤ 500 m/min, a transition area has been observed. It has been proved that the application of sintered carbide edges is not economically justified above certain cutting speed.

  10. Effects of sintering atmosphere and initial particle size on sintering of gadolinia-doped ceria

    International Nuclear Information System (INIS)

    Batista, Rafael Morgado

    2014-01-01

    The effects of the sintering atmosphere and initial particle size on the sintering of ceria containing 10 mol% gadolinia (GdO 1.5 ) were systematically investigated. The main physical parameter was the specific surface area of the initial powders. Nanometric powders with three different specific surface areas were utilized, 210 m 2 /g, 36,2 m 2 /g e 7,4 m 2 /g. The influence on the densification, and micro structural evolution were evaluated. The starting sintering temperature was verified to decrease with increasing on the specific surface area of raw powders. The densification was accelerated for the materials with smaller particle size. Sintering paths for crystallite growth were obtained. Master sintering curves for gadolinium-doped ceria were constructed for all initial powders. A computational program was developed for this purpose. The results for apparent activation energy showed noticeable dependence with specific surface area. In this work, the apparent activation energy for densification increased with the initial particle size of powders. The evolution of the particle size distributions on non isothermal sintering was investigated by WPPM method. It was verified that the grain growth controlling mechanism on gadolinia doped ceria is the pore drag for initial stage and beginning of intermediate stage. The effects of the sintering atmosphere on the stoichiometry deviation of ceria, densification, microstructure evolution, and electrical conductivity were analyzed. Inert, oxidizing, and reducing atmospheres were utilized on this work. Deviations on ceria stoichiometry were verified on the bulk materials. The deviation verified was dependent of the specific surface area and sintering atmosphere. Higher reduction potential atmospheres increase Ce 3+ bulk concentration after sintering. Accelerated grain growth and lower electrical conductivities were verified when reduction reactions are significantly present on sintering. (author)

  11. Master sintering curve: A practical approach to its construction

    Directory of Open Access Journals (Sweden)

    Pouchly V.

    2010-01-01

    Full Text Available The concept of a Master Sintering Curve (MSC is a strong tool for optimizing the sintering process. However, constructing the MSC from sintering data involves complicated and time-consuming calculations. A practical method for the construction of a MSC is presented in the paper. With the help of a few dilatometric sintering experiments the newly developed software calculates the MSC and finds the optimal activation energy of a given material. The software, which also enables sintering prediction, was verified by sintering tetragonal and cubic zirconia, and alumina of two different particle sizes.

  12. Efeitos do carbono na evolução de segundas-fases e na densificação do nitreto de alumínio com Y2O3 Effects of carbon on second-phase evolution and densification of aluminum nitride with Y2O3

    Directory of Open Access Journals (Sweden)

    A. L. Molisani

    2010-12-01

    Full Text Available Foi investigado o efeito da adição do carbono na evolução de segundas-fases e na densificação do AlN com 4% em massa de Y2O3. A mudança de composição da segunda-fase do AlN com Y2O3 foi induzida pela adição de 0,5% e 1,0% em massa de carbono. A sinterização sob atmosfera de nitrogênio foi realizada em forno com elemento resistivo de tungstênio entre 1650 ºC e 1850 ºC. A evolução de segunda-fase mostrou uma tendência para formar fases mais ricas em ítrio com o aumento do teor de carbono, o que atrasou a densificação do AlN com Y2O3 devido ao aumento da temperatura de formação de fase líquida. O efeito prejudicial causado pela adição de carbono diminuiu com o aumento da temperatura de sinterização, pois todas as amostras atingiram quase completa densificação após sinterização a 1800 ºC. A adição de carbono induziu uma evaporação significativa de compostos durante a sinterização, mas o comportamento de densificação foi pouco influenciado pela redução na fração de fase líquida existente na temperatura de sinterização e pelo gás aprisionado no interior dos poros fechados.The effect of carbon addition on the second-phases evolution and on the densification of AlN with 4wt.%.Y2O3 was investigated. The change of second-phase composition of AlN with Y2O3 was induced by the addition of 0.5wt.% and 1.0wt.% carbon. Sintering under nitrogen atmosphere was performed in tungsten heated furnace between 1650 ºC and 1850 ºC. The second-phase evolution had a tendency to form Y-richer phases with increasing carbon content, which delayed the densification of AlN with Y2O3 due to the increase of liquid-phase formation temperature. The harmful effect caused by the addition of carbon was diminished with increasing sintering temperature, since all samples achieved almost full densification after sintering at 1800 ºC. The addition of carbon induced significant evaporation of compounds during sintering, but the

  13. Wear monitoring of protective nitride coatings using image processing

    DEFF Research Database (Denmark)

    Rasmussen, Inge Lise; Guibert, M.; Belin, M.

    2010-01-01

    -meter with up to 105 19 repetitive cycles, eventually leaving the embedded TiN signal layer uncovered at the bottom the wear scar. 20 The worn surface was characterized by subsequent image processing. A color detection of the wear scar with 21 the exposed TiN layer by a simple optical imaging system showed......A double-layer model system, consisting of a thin layer of tribological titanium aluminum nitride (TiAlN) on 17 top of titanium nitride (TiN), was deposited on polished 100Cr6 steel substrates. The TiAlN top-coatings 18 were exposed to abrasive wear by a reciprocating wear process in a linear tribo...... a significant increase up to a factor of 2 of 22 the relative color values from the TiAlN top layers to the embedded TiN signal layers. This behavior agrees 23 well with the results of reflectance detection experiment with a red laser optical system on the same system. 24 Thus we have demonstrated that image...

  14. Calcium Hex aluminate reaction sintering by Spark Plasma Sintering; Sinterizacion reactiva de Hexaluminato de Calcio mediante Spark Plasma Sintering

    Energy Technology Data Exchange (ETDEWEB)

    Iglesia, P. G. de la; Garcia-Moreno, O.; Torrecillas, R.; Menendez, J. L.

    2012-11-01

    Calcium hex aluminate (CaAl{sub 1}2O{sub 1}9) is the most alumina-rich intermediate compound of the CaO-Al{sub 2}O{sub 3} system. The formation of this aluminate is produced by the reaction between calcium oxide and alumina with the consequent formation of intermediates compounds with lower alumina content with increasing temperature (CaAl{sub 2}O{sub 4}, CaAl4O{sub 7}). In this study we studied the variation of sintering parameters for obtaining dense and pure calcium hex aluminate by reaction sintering by Spark Plasma Sintering (SPS). A mixing of Al{sub 2}O{sub 3} and CaCO{sub 3} were used as reactive. Final densities close to the theoretical and phase transformation over 93% were achieved by this method. (Author) 22 refs.

  15. Li3-xMxN (M = Co, Ni) synthesized by Spark Plasma Sintering for hydrogen storage

    International Nuclear Information System (INIS)

    Zhang Junxian; Cerny, Radovan; Villeroy, Benjamin; Godart, Claude; Chandra, Dhanesh; Latroche, Michel

    2011-01-01

    Research highlights: → Anion substitution in light hydrides (amides) is realized experimentally. → The compounds have been synthesized by in-situ Spark plasma Sintering. → The structural characterization has been done by synchrotron powder diffraction. - Abstract: Lithium nitride has recently emerged as a promising material for hydrogen storage. The hydrogen storage capacity reaches 10.2 wt% H by the formation of compounds, such as imides, amides, and others. Hydrogenation of lithium nitride is highly exothermic, and thus desorbing hydrogen from these compounds requires high temperature and cannot be used for reversible hydrogen storage. Ab initio calculations predict that partial substitution of Li by transition metals like Cu or Ni can reduce the reaction enthalpy between amide and imide. In this work, we present the synthesis of the ternary system Li 3-x M x N (M = Co or Ni) by Spark Plasma Sintering (SPS). The samples are hydrogenated at 255 deg. C by solid gas reaction. The sample crystal structures have been analyzed by synchrotron X-ray powder diffraction using a high resolution powder diffractometer. The structural models for Co and Ni-substituted Li 3 N have been confirmed. The effect of the substitution on the phase formation upon hydrogenation has been investigated at various metal and hydrogen concentration. Different behaviors are observed depending on the nature of M.

  16. Integrated analysis of oxide nuclear fuel sintering

    International Nuclear Information System (INIS)

    Baranov, V.; Kuzmin, R.; Tenishev, A.; Timoshin, I.; Khlunov, A.; Ivanov, A.; Petrov, I.

    2011-01-01

    Dilatometric and thermal-gravimetric investigations have been carried out for the sintering process of oxide nuclear fuel in gaseous Ar - 8% H 2 atmosphere at temperatures up to 1600 0 C. The pressed compacts were fabricated under real production conditions of the OAO MSZ with application of two different technologies, so called 'dry' and 'wet' technologies. Effects of the grain size growth after the heating to different temperatures were observed. In order to investigate the effects produced by rate of heating on properties of sintered fuel pellets, the heating rates were varied from 1 to 8 0 C per minute. Time of isothermal overexposure at maximal temperature (1600 0 C) was about 8 hours. Real production conditions were imitated. The results showed that the sintering process of the fuel pellets produced by two technologies differs. The samples sintered under different heating rates were studied with application of scanning electronic microscopy analysis for determination of mean grain size. A simulation of heating profile for industrial furnaces was performed to reduce the beam cycles and estimate the effects of variation of the isothermal overexposure temperatures. Based on this data, an optimization of the sintering conditions was performed in operations terms of OAO MSZ. (authors)

  17. Indium gallium nitride multijunction solar cell simulation using silvaco atlas

    OpenAIRE

    Garcia, Baldomero

    2007-01-01

    This thesis investigates the potential use of wurtzite Indium Gallium Nitride as photovoltaic material. Silvaco Atlas was used to simulate a quad-junction solar cell. Each of the junctions was made up of Indium Gallium Nitride. The band gap of each junction was dependent on the composition percentage of Indium Nitride and Gallium Nitride within Indium Gallium Nitride. The findings of this research show that Indium Gallium Nitride is a promising semiconductor for solar cell use. United...

  18. Fabrication and Characterization of a Ruthenium Nitride Membrane for Electrochemical pH Sensors

    Science.gov (United States)

    Liao, Yi-Hung; Chou, Jung-Chuan

    2009-01-01

    The pH sensing and nonideal characteristics of a ruthenium nitride (RuN) sensing membrane pH sensor were investigated. RuN thin films were deposited from a 99.9% ruthenium target on p-type silicon substrates using radio frequency (r.f.) sputtering with N2 gas. Subsequently, the nanometric structure and surface morphology of RuN thin films were determined. The sensitivity of the RuN sensing membrane pH sensor was 58.03 mV/pH, obtained from ID-VG curves with a current-voltage (I–V) measurement system in standard buffer solutions from pH 1 to pH 13 at room temperature (25 °C). Moreover, the nonideal characteristics of the RuN sensing membrane, such as temperature coefficient, drift with light influence, drift rate and hysteresis width, etc. were also investigated. Finally, the sensing characteristics of the RuN membrane were compared with titanium nitride (TiN), aluminum nitride (AlN) and silicon nitride (Si3N4) membranes. PMID:22574026

  19. Effects of forming temperature and sintering rate to the final properties of FeCuAl powder compacts formed through uniaxial die compaction process

    Science.gov (United States)

    Rahman, M. M.; Ismail, M. A.; Sopyan, I.; Rahman, H. Y.

    2018-01-01

    This paper presents the outcomes of an experimental investigation on the effects of forming temperature and sintering schedule to the final characteristics of FeCuAl powder mass formed at different temperature and sintered at different schedule. A lab-scale uni-axial die compaction rig was designed and fabricated which enabled the compaction of powder mass at room temperature as well as elevated temperature. Iron (Fe) powder ASC 100.29 was mechanically mixed with other elemental powders, namely copper (Cu), and aluminum (Al) for 60 minutes and compacted at three different temperature, i.e., 30°C, 150°C, and 200°C by applying 425 MPa of simultaneous downward and upward axial loading to generate green compacts. The as-pressed samples were inspected visually and the defect-free green compacts were subsequently sintered in an argon gas fired furnace at 800°C for 60 min at three different heating/cooling rates, i.e., 5, 10, and 15°C/min, respectively. The sintered samples were then characterised for their physical, electrical, and mechanical properties. The microstructures of the sintered samples were also analysed. The results revealed that a forming temperature of 150°C and a sintering rate of 10°C/min could produce a product with better characteristics.

  20. Advances in aluminum pretreatment

    Energy Technology Data Exchange (ETDEWEB)

    Sudour, Michel; Maintier, Philippe [PPG Industries France, 3 Z.A.E. Les Dix Muids, B.P. 89, F-59583 Marly (France); Simpson, Mark [PPG Industries Inc., 1200 Piedmont Troy, Michigan 48083 (United States); Quaglia, Paolo [PPG Industries Italia, Via Garavelli 21, I-15028 Quattordio (Italy)

    2004-07-01

    As automotive manufacturers continue to look for ways to reduce vehicle weight, aluminum is finding more utility as a body panel component. The substitution of cold-rolled steel and zinc-coated substrates with aluminum has led to new challenges in vehicle pretreatment. As a result, changes to traditional pretreatment chemistries and operating practices are necessary in order to produce an acceptable coating on aluminum body panels. These changes result in increased sludging and other undesirable characteristics. In addition to the chemistry changes, there are also process-related problems to consider. Many existing automotive pretreatment lines simply were not designed to handle aluminum and its increased demands on filtration and circulation equipment. To retrofit such a system is capital intensive and in addition to requiring a significant amount of downtime, may not be totally effective. Thus, the complexities of pre-treating aluminum body panels have actually had a negative effect on efforts to introduce more aluminum into new vehicle design programs. Recent research into ways of reducing the negative effects has led to a new understanding of the nature of zinc phosphate bath -aluminum interactions. Many of the issues associated with the pretreatment of aluminum have been identified and can be mitigated with only minor changes to the zinc phosphate bath chemistry. The use of low levels of soluble Fe ions, together with free fluoride, has been shown to dramatically improve the efficiency of a zinc phosphate system processing aluminum. Appearance of zinc phosphate coatings, coating weights and sludge are all benefited by this chemistry change. (authors)

  1. Nitridation of U and Pu recovered in liquid Cd cathode by molten salt electrorefining of (U,Pu)N

    Energy Technology Data Exchange (ETDEWEB)

    Satoh, Takumi; Iwai, Takashi; Arai, Yasuo [Japan Atomic Energy Agency (Japan)

    2009-06-15

    Solid solutions of actinide mono-nitrides have been proposed as a candidate fuel of the accelerator-driven system (ADS) and Gen.IV-type fast reactors because the thermal conductivity and metal density are higher than those of actinide oxides and also they have high melting temperature. Pyrochemical process has several advantages over conventional wet process in treating of spent nitride fuel. One of the key technologies of the pyrochemical reprocessing of nitride fuel is the formation of the nitrides from actinides in the liquid Cd cathode. The nitridation-distillation combined method was developed and has been adopted to convert the actinides to the nitrides. In this method, the nitridation of actinides and the distillation of Cd occurred simultaneously by heating the actinide-Cd alloys in N{sub 2} gas stream. In the present study, the nitride formation behavior of U and Pu recovered in Cd cathode by molten salt electrorefining of (U,Pu)N was experimentally investigated. In addition, the nitride pellet was prepared form the powder obtained by the nitridation of U and Pu recovered in Cd cathode. (U,Pu)N (PuN = 80 mol %) was used as the starting material in the experiment. Molten salt electrorefining of (U,Pu)N pellet was carried out in the LiCl-KCl eutectic salt with 1.2 wt% PuCl{sub 3} and 0.3 wt% UCl{sub 3} of about 110 g at the constant anodic potential of -0.60 to -0.55 V vs. Ag/AgCl for about 9 hours at 773 K. After the electrorefining, about 42 % of U and Pu in the starting (U,Pu)N pellet was dissolved at the anode and recovered into the liquid Cd cathode. The recovered U-Pu-Cd alloy was heated in an alumina crucible at 973 K for 10 hours under N{sub 2} gas (99.999 %) stream (0.015 L/min). Fine black powder was recovered after heating the U-Pu-Cd alloy. The powder was identified as the single phase solid solution of (U,Pu)N by the XRD analysis. After milling in the agate mortar for 1 hour, the powder was compacted into green pellet under a pressure of about

  2. Ion nitridation - physical and technological aspects

    International Nuclear Information System (INIS)

    Elbern, A.W.

    1980-01-01

    Ion nitridation, is a technique which allows the formation of a controlled thickness of nitrides in the surface of the material, using this material as the cathode in a low pressure glow discharge, which presents many advantages over the conventional method. A brief review of the ion nitriding technique, the physical fenomena involved, and we discuss technological aspects of this method, are presented. (Author) [pt

  3. Solid state sintering of silicon nitride ARL-CR-114. Final report

    Energy Technology Data Exchange (ETDEWEB)

    Mangels, J.; Mikijelj, B. [Ceradyne, Inc., Costa Mesa, CA (United States)

    1994-09-01

    This report describes the development of Si{sub 3}N{sub 4}material compositions in the Si{sub 3}N{sub 4}-Y{sub 2}O{sub 3}-SiO{sub 2}-Mo{sub 2}C system with good high temperature stress rupture properties which could be used in engine components. Two distinct processing routes were examined in the course of the program: SSN and SRBSN. SRBSN was chosen for material property optimization. After characterization of two optimized compositions in the above system, demonstration engine components (exhaust valve blanks) were manufactured using the established processing procedures. Dimensional tolerance capabilities of the process were established and material properties of the components were shown to be comparable to those established during material development.

  4. Sintered cobalt-rare earth intermetallic product

    International Nuclear Information System (INIS)

    Benz, M.G.

    1975-01-01

    This patent describes a sintered product having substantially stable permanent magnet properties in air at room temperature. It comprises compacted particulate cobalt--rare earth alloy consisting essentially of a Co 5 R intermetallic phase and a CoR intermetallic phase which is richer in rare earth metal content than the Co 5 R phase, where R is a rare earth metal. The Co 5 R intermetallic phase is present in an amount of at least 65 percent by weight of the sintered product and the CoR intermetallic phase which is richer in rare earth metal content than the Co 5 R phase is present in a positive amount having a value ranging up to about 35 percent by weight of the product. The sintered product has a density of at least 87 percent and has pores which are substantially noninterconnecting and wherein the component grains have an average size less than 30 microns

  5. Method of manufacturing sintered nuclear fuel

    International Nuclear Information System (INIS)

    Watarumi, Kazutoshi.

    1984-01-01

    Purpose: To obtain composite pellets with an improved strength. Method: A core mainly composed of fuel materials is previously prepared, embedded into the central portion of a pellet, silted therearound with cladding material, and then pressmolded and sintered. For instance, a rugby-ball like core body with the maximum outer diameter of 6 mm and the height of 6 mm is made by compressive molding with uranium dioxide powder, then coating material comprising the same powder incorporated with 0.1 % by weight of SiC fibers is filled around the core body, which is molded into a composite pellet by means of pressing and then sintered at 1600 0 C, to obtain a sintered pellet of 93.5 % theoretical density. As the result of the compression test for the pellet, it showed a strength greater by 15 % than that of the similar mono-layer pellet. (Kamimura, M.)

  6. Sintering of nickel steam reforming catalysts

    DEFF Research Database (Denmark)

    Sehested, Jens; Larsen, Niels Wessel; Falsig, Hanne

    2014-01-01

    The lifetimes of heterogeneous catalysts in many widely used industrial processes are determined by the loss of active surface area. In this context, the underlying physical sintering mechanism and quantitative information about the rate of sintering at industrial conditions are relevant....... In this paper, particle migration and coalescence in nickel steam reforming catalysts is studied. Density functional theory calculations indicate that Ni-OH dominate nickel transport at nickel surfaces in the presence of steam and hydrogen as Ni-OH has the lowest combined energies of formation and diffusion...... compared to other potential nickel transport species. The relation between experimental catalyst sintering data and the effective mass diffusion constant for Ni-OH is established by numerical modelling of the particle migration and coalescence process. Using this relation, the effective mass diffusion...

  7. Design of sintering-stable heterogeneous catalysts

    DEFF Research Database (Denmark)

    Gallas-Hulin, Agata

    the crystalline framework of a zeolite creates a steric hindrance against agglomeration into larger clusters. In the present study, experimental protocols for encapsulation of metal nanoparticles inside zeolites were developed. Two different methodologies were proposed to encapsulate gold, palladium and platinum......One of the major issues in the use of metal nanoparticles in heterogeneous catalysis is sintering. Sintering occurs at elevated temperatures because of increased mobility of nanoparticles, leading to their agglomeration and, as a consequence, to the deactivation of the catalyst. It is an emerging...... problem especially for the noble metals-based catalysis. These metals being expensive and scarce, it is worth developing catalyst systems which preserve their activity over time. Encapsulation of nanoparticles inside zeolites is one of the ways to prevent sintering. Entrapment of nanoparticles inside...

  8. Fabrication of 200 mm Diameter Sintering Body of Skutterudite Thermoelectric Material by Spark Plasma Sintering

    Science.gov (United States)

    Tomida, T.; Sumiyoshi, A.; Nie, G.; Ochi, T.; Suzuki, S.; Kikuchi, M.; Mukaiyama, K.; Guo, J. Q.

    2017-05-01

    Filled skutterudite is a promising material for thermoelectric power generation because its ZT value is relatively high. However, mass production of high-performance thermoelectric materials remains a challenge. This study focused on the sintering process of thermoelectric materials. Large-diameter n-type (Yb or La, Ca, Al, Ga, In)0.8(Co, Fe)4Sb12 skutterudite sintering bodies with a small thickness were successfully produced by the spark plasma sintering (SPS) method. When direct current flows through the thermoelectric sintering body during the SPS pulse, the Peltier effect causes a temperature difference within the sintering body. To eliminate the Peltier effect, an electrical insulating material was inserted between the punch (electrode) and the sintering body. In this way, an n-type La-filled skutterudite sample with a diameter of 200 mm, thickness of 21 mm, and weight of 5 kg was successfully produced. The thermoelectric properties and microstructures of the sample were almost the same throughout the whole sintering body, and the dimensionless figure of merit reached 1.0 at 773 K.

  9. Topotactic synthesis of vanadium nitride solid foams

    International Nuclear Information System (INIS)

    Oyama, S.T.; Kapoor, R.; Oyama, H.T.; Hofmann, D.J.; Matijevic, E.

    1993-01-01

    Vanadium nitride has been synthesized with a surface area of 120 m 2 g -1 by temperature programmed nitridation of a foam-like vanadium oxide (35 m 2 g -1 ), precipitated from vanadate solutions. The nitridation reaction was established to be topotactic and pseudomorphous by x-ray powder diffraction and scanning electron microscopy. The crystallographic relationship between the nitride and oxide was {200}//{001}. The effect of precursor geometry on the product size and shape was investigated by employing vanadium oxide solids of different morphologies

  10. PRODUCTION OF WELDMENTS FROM SINTERED TITANIUM ALLOYS

    Directory of Open Access Journals (Sweden)

    A. YE. Kapustyan

    2014-04-01

    Full Text Available Purpose. Limited application of details from powder titanium alloys is connected with the difficulties in obtaining of long-length blanks, details of complex shape and large size. We can solve these problems by applying the welding production technology. For this it is necessary to conduct a research of the structure and mechanical properties of welded joints of sintered titanium alloys produced by flash welding. Methodology. Titanium industrial powders, type PT5-1 were used as original substance. Forming of blanks, whose chemical composition corresponded to BT1-0 alloy, was carried out using the powder metallurgy method. Compounds were obtained by flash welding without preheating. Microstructural investigations and mechanical tests were carried out. To compare the results investigations of BT1-0 cast alloy were conducted. Findings. Samples of welded joints of sintered titanium blanks from VT1-0 alloy using the flash butt welding method were obtained. During welding the microstructure of basic metal consisting of grains of an a-phase, with sizes 40...70 mkm, is transformed for the seam weld and HAZ into the lamellar structure of an a-phase. The remaining pores in seam weld were practically absent; in the HAZ their size was up to 2 mkm, with 30 mkm in the basic metal. Attainable level of mechanical properties of the welded joint in sintered titanium alloys is comparable to the basic metal. Originality. Structure qualitative changes and attainable property complex of compounds of sintered titanium alloys, formed as a result of flash butt welding were found out. Practical value. The principal possibility of high-quality compounds obtaining of sintered titanium alloys by flash welding is shown. This gives a basis for wider application of sintered titanium alloys due to long-length blanks production that are correspond to deformable strand semi finished product.

  11. Phase characterisation in spark plasma sintered TiPt alloy

    CSIR Research Space (South Africa)

    Chikosha, S

    2011-12-01

    Full Text Available The conclusions drawn from this presentation are that Spark Plasma Sintering (SPS) of equiatomic BE TiPt powder produces fully sintered specimens, with incomplete homogenisation. There is a need for improved furnace atmosphere control so...

  12. Development of hierarchical magnesium composites using hybrid microwave sintering.

    Science.gov (United States)

    Habibi, Meisam Kouhi; Joshi, Shailendra P; Gupta, Manoj

    2011-01-01

    In this work, hierarchical magnesium based composites with a micro-architecture comprising reinforcing constituent that is a composite in itself were fabricated using powder metallurgy route including microwave assisted rapid sintering technique and hot extrusion. Different level-I composite particles comprises sub-micron pure aluminum (Al) matrix containing Al2O3 particles of different length scale (from micrometer to nanometer size). Microstructural characterization of the hierarchical composites revealed reasonably uniform distribution of level-I composite particles and significant grain refinement compared to monolithic Mg. Hierarchical composite configurations exhibited different mechanical performance as a function of Al2O3 length scale. Among the different hierarchical formulations synthesized, the hierarchical configuration with level-I composition comprising Al and nano-Al2O3 (0.05 microm) exhibited the highest improvement in tensile yield strength (0.2% YS), ultimate tensile strength (UTS), tensile failure strain (FS), compressive yield strength (0.2% CYS) and ultimate compressive strength (UCS) (+96%, +80%, +42%, +80%, and +83%) as compared to monolithic Mg. An attempt has been made in the present study to correlate the effect of different length scales of Al2O3 particulates on the microstructural and mechanical response of magnesium.

  13. Effect of plasma nitriding on electrodeposited Ni–Al composite coating

    DEFF Research Database (Denmark)

    Daemi, N.; Mahboubi, F.; Alimadadi, Hossein

    2011-01-01

    In this study plasma nitriding is applied on nickel–aluminum composite coating, deposited on steel substrate. Ni–Al composite layers were fabricated by electro-deposition process in Watt’s bath containing Al particles. Electrodeposited specimens were subjected to plasma atmosphere comprising of N2......–20% H2, at 500°C, for 5h. The surface morphology investigated, using a scanning electron microscope (SEM) and the surface roughness was measured by use of contact method. Chemical composition was analyzed by X-ray fluorescence spectroscopy and formation of AlN phase was confirmed by X-ray diffraction....... The corrosion resistance of composite coatings was measured by potentiodynamic polarization in 3.5% NaCl solution. The obtained results show that plasma nitriding process leads to an increase in microhardness and corrosion resistance, simultaneously....

  14. Microencapsulation of silicon nitride particles with yttria and yttria-alumina precursors

    International Nuclear Information System (INIS)

    Garg, A.K.; De Jonghe, L.C.

    1990-01-01

    Procedures are described to deposit uniform layers of yttria and yttria-alumina precursors on fine powders and whiskers of silicon nitride. The coatings were produced by aging at elevated temperatures aqueous systems containing the silicon nitride core particles, yttrium and aluminum nitrates, and urea. Optimum concentrations of the core particles, in relation to the reactants, were established to promote surface deposition of the oxide precursors. Polymeric dispersants were used effectively to prevent agglomeration of the solids during the microencapsulation process. The morphology of the powders was characterized using scanning and transmission electron microscopy. The mechanisms for the formation of the coated layers are discussed. A description is provided that allows qualitative assessment of the experimental factors that determine microencapsulation by a slurry method

  15. Fusibility and sintering characteristics of ash

    International Nuclear Information System (INIS)

    Ots, A. A.

    2012-01-01

    The temperature characteristics of ash fusibility are studied for a wide range of bituminous and brown coals, lignites, and shales with ratios R B/A of their alkaline and acid components between 0.03 and 4. Acritical value of R B/A is found at which the fusion temperatures are minimal. The sintering properties of the ashes are determined by measuring the force required to fracture a cylindrical sample. It is found that the strength of the samples increases sharply at certain temperatures. The alkali metal content of the ashes has a strong effect on their sintering characteristics.

  16. Structural and electrical properties of copper-nickel-aluminum alloys obtained by conventional powder metallurgy method

    Energy Technology Data Exchange (ETDEWEB)

    Monteiro, Waldemar A.; Carrio, Juan A.G.; Silveira, C.R. da; Pertile, H.K.S., E-mail: fisica.cch@mackenzie.br [Universidade Presbiteriana Mackenzie (UPM/CCH), Sao Paulo, SP (Brazil). Centro de Ciencias e Humanidades. Dept. de Fisica; Silva, L.C.E. da; Buso, S.J., E-mail: jgcarrio@mackenzie.br [Instituto de Pesquisas Energeticas e Nucleares (IPEN/CNEN-SP), Sao Paulo, SP (Brazil)

    2009-07-01

    This work looked for to search out systematically, in scale of laboratory, copper-nickel-aluminum alloys (Cu-Ni-Al) with conventional powder metallurgy processing, in view of the maintenance of the electric and mechanical properties with the intention of getting electric connectors of high performance or high mechanical damping. After cold uniaxial pressing (1000 kPa), sintering (780 deg C) and convenient homogenization treatments (500 deg C for different times) under vacuum (powder metallurgy), the obtained Cu-Ni-Al alloys were characterized by optical microscopy, electrical conductivity, Vickers hardness. X rays powder diffraction data were collected for the sintered samples in order to a structural and microstructural analysis. The comparative analysis is based on the sintered density, hardness, macrostructures and microstructures of the samples. (author)

  17. Structural and electrical properties of copper-nickel-aluminum alloys obtained by conventional powder metallurgy method

    International Nuclear Information System (INIS)

    Monteiro, Waldemar A.; Carrio, Juan A.G.; Silveira, C.R. da; Pertile, H.K.S.

    2009-01-01

    This work looked for to search out systematically, in scale of laboratory, copper-nickel-aluminum alloys (Cu-Ni-Al) with conventional powder metallurgy processing, in view of the maintenance of the electric and mechanical properties with the intention of getting electric connectors of high performance or high mechanical damping. After cold uniaxial pressing (1000 kPa), sintering (780 deg C) and convenient homogenization treatments (500 deg C for different times) under vacuum (powder metallurgy), the obtained Cu-Ni-Al alloys were characterized by optical microscopy, electrical conductivity, Vickers hardness. X rays powder diffraction data were collected for the sintered samples in order to a structural and microstructural analysis. The comparative analysis is based on the sintered density, hardness, macrostructures and microstructures of the samples. (author)

  18. Corrosion Inhibitors for Aluminum.

    Science.gov (United States)

    Muller, Bodo

    1995-01-01

    Describes a simple and reliable test method used to investigate the corrosion-inhibiting effects of various chelating agents on aluminum pigments in aqueous alkaline media. The experiments that are presented require no complicated or expensive electronic equipment. (DDR)

  19. Ternary nitrides for hydrogen storage: Li-B-N, Li-Al-N and Li-Ga-N systems

    International Nuclear Information System (INIS)

    Langmi, Henrietta W.; McGrady, G. Sean

    2008-01-01

    This paper reports an investigation of hydrogen storage performance of ternary nitrides based on lithium and the Group 13 elements boron, aluminum and gallium. These were prepared by ball milling Li 3 N together with the appropriate Group 13 nitride-BN, AlN or GaN. Powder X-ray diffraction of the products revealed that the ternary nitrides obtained are not the known Li 3 BN 2 , Li 3 AlN 2 and Li 3 GaN 2 phases. At 260 deg. C and 30 bar hydrogen pressure, the Li-Al-N ternary system initially absorbed 3.7 wt.% hydrogen, although this is not fully reversible. We observed, for the first time, hydrogen uptake by a pristine ternary nitride of Li and Al synthesized from the binary nitrides of the metals. While the Li-Ga-N ternary system also stored a significant amount of hydrogen, the storage capacity for the Li-B-N system was near zero. The hydrogenation reaction is believed to be similar to that of Li 3 N, and the enthalpies of hydrogen absorption for Li-Al-N and Li-Ga-N provide evidence that AlN and GaN, as well as the ball milling process, play a significant role in altering the thermodynamics of Li 3 N

  20. Studying aluminum hydride by means of thermal analysis

    Science.gov (United States)

    Milekhin, Yu. M.; Koptelov, A. A.; Matveev, A. A.; Baranets, Yu. N.; Bakulin, D. A.

    2015-07-01

    Chemical reactions and physical transformations that occur upon heating aluminum hydride (AlH3, alane), stored for 25 years, in the temperature range of 50-1200°C in an atmosphere of nitrogen, argon, and air are studied by means of thermogravimetric analysis and differential scanning calorimetry. The heat of thermal decomposition and the hydrogen content are determined for the AlH3 samples and are found to be 318 ± 25 J/g and 9.32 ± 0.24 wt %, respectively. It is established that the estimated enthalpy of formation of AlH3 in stoichiometric composition (Δf H ≈ -10.3 kJ/mol) agrees with the literature data. After the release of hydrogen, the mass of the precipitate increases by 0.5 ± 0.3%, relative to the initial mass of the AlH3 samples; the most likely reason for this effect is the adsorption of nitrogen (argon) in the micropores and mesopores that form. Thermal phenomena associated with the crystallization of the amorphous aluminum that forms after hydrogen is released from the alane particles are analyzed. It is established that the aluminum contained in initial AlH3 samples is almost completely transformed into aluminum nitride and oxide (AlN and Al3O3) upon heating to 1200°C in nitrogen and air, respectively.

  1. Shock Response of Silicon Nitride

    Science.gov (United States)

    Dandekar, D. P.; Casem, D. T.; Motoyashiki, Y.; Sato, E.

    2009-06-01

    Silicon nitride is suitable for varied applications. The properties of silicon nitride have been tailored through processing and doping. The current work presents shock response of silicon nitride marketed as SN282. The density of this material, 3.4 Mg/m^3, exceeds its single crystal density due to the presence of lutetium oxide as an additive in ca. 5% by weight in the material. While the average grain size is 3.4 microns, aspect ratio of the grains exceed 3. Preliminary results of shock wave experiments may be summarized as follows: (1) The Hugoniot Elastic Limit (HEL) of SN282 is 11.2 GPa. (2) The magnitude of the inelastic wave velocity just above the HEL is 8.73 km/s, suggesting that inelastic deformation above the HEL is due to shock induced plasticity in the material. (3) The estimated value of the spall strength is 0.5 GPa. The spall strength of SN282 remains unchanged even when shocked beyond the HEL. The non-vanishing spall strength suggests that doping plays a role in the retention of spall strength of SN282. The role of doping needs to be further investigated.

  2. Fabrication of Silicon Nitride Dental Core Ceramics with Borosilicate Veneering material

    International Nuclear Information System (INIS)

    Wananuruksawong, R; Jinawath, S; Wasanapiarnpong, T; Padipatvuthikul, P

    2011-01-01

    Silicon nitride (Si 3 N 4 ) ceramic is a great candidate for clinical applications due to its high fracture toughness, strength, hardness and bio-inertness. This study has focused on the Si 3 N 4 ceramic as a dental core material. The white Si 3 N 4 was prepared by pressureless sintering at relative low sintering temperature of 1650 deg. C in nitrogen atmosphere. The coefficient of thermal expansion (CTE) of Si 3 N 4 ceramic is lower than that of Zirconia and Alumina ceramic which are popular in this field. The borosilicate glass veneering was employed due to its compatibility in thermal expansion. The sintered Si 3 N 4 specimens represented the synthetic dental core were paintbrush coated by a veneer paste composed of borosilicate glass powder ( 2 O 3 - partial stabilized zirconia) and 30 wt% of polyvinyl alcohol (5 wt% solution). After coating the veneer on the Si 3 N 4 specimens, the firing was performed in electric tube furnace between 1000-1200 deg. C. The veneered specimens fired at 1100 deg. C for 15 mins show good bonding, smooth and glossy without defect and crazing. The veneer has thermal expansion coefficient as 3.98x10 -6 deg. C -1 , rather white and semi opaque, due to zirconia addition, the Vickers hardness as 4.0 GPa which is closely to the human teeth.

  3. Fabrication of Silicon Nitride Dental Core Ceramics with Borosilicate Veneering material

    Science.gov (United States)

    Wananuruksawong, R.; Jinawath, S.; Padipatvuthikul, P.; Wasanapiarnpong, T.

    2011-10-01

    Silicon nitride (Si3N4) ceramic is a great candidate for clinical applications due to its high fracture toughness, strength, hardness and bio-inertness. This study has focused on the Si3N4 ceramic as a dental core material. The white Si3N4 was prepared by pressureless sintering at relative low sintering temperature of 1650 °C in nitrogen atmosphere. The coefficient of thermal expansion (CTE) of Si3N4 ceramic is lower than that of Zirconia and Alumina ceramic which are popular in this field. The borosilicate glass veneering was employed due to its compatibility in thermal expansion. The sintered Si3N4 specimens represented the synthetic dental core were paintbrush coated by a veneer paste composed of borosilicate glass powder (<150 micrometer, Pyrex) with 5 wt% of zirconia powder (3 wt% Y2O3 - partial stabilized zirconia) and 30 wt% of polyvinyl alcohol (5 wt% solution). After coating the veneer on the Si3N4 specimens, the firing was performed in electric tube furnace between 1000-1200°C. The veneered specimens fired at 1100°C for 15 mins show good bonding, smooth and glossy without defect and crazing. The veneer has thermal expansion coefficient as 3.98×10-6 °C-1, rather white and semi opaque, due to zirconia addition, the Vickers hardness as 4.0 GPa which is closely to the human teeth.

  4. Corrosion Protection of Aluminum

    Science.gov (United States)

    Dalrymple, R. S.; Nelson, W. B.

    1963-07-01

    Treatment of aluminum-base metal surfaces in an autoclave with an aqueous chromic acid solution of 0.5 to 3% by weight and of pH below 2 for 20 to 50 hrs at 160 to 180 deg C produces an extremely corrosion-resistant aluminum oxidechromium film on the surface. A chromic acid concentration of 1 to 2% and a pH of about 1 are preferred.

  5. Wear resistance analysis of the aluminum 7075 alloy and the nanostructured aluminum 7075 - silver nanoparticles composites

    Directory of Open Access Journals (Sweden)

    Estrada-Ruiz R.H.

    2016-01-01

    Full Text Available Nanostructured composites of the aluminum 7075 alloy and carbon-coated silver nanoparticles were synthetized by the mechanical milling technique using a high-energy mill SPEX 8000M; the powders generated were compacted, sintered and hot-extruded to produce 1 cm-diameter bars. The composites were then subjected to a wear test using a pin-on-disc device to validate the hypothesis that second phase-ductile nanometric particles homogenously distributed throughout the metalmatrix improve the wear resistance of the material. It was found that silver nanoparticles prevent the wear of the material by acting as an obstacle to dislocations movement during the plastic deformation of the contact surface, as well as a solid lubricant when these are separated from the metal-matrix.

  6. A new synthesis process for aluminium nitride. Nouveau procede de synthese du nitrure d'aluminium

    Energy Technology Data Exchange (ETDEWEB)

    Haussonne, J.M. (CNET, Centre Lannion B, 22 (France)); Lostec, J. (CNET, Centre Lannion B, 22 (France)); Bertot, J.P. (CNET, Centre Lannion B, 22 (France)); Lostec, L. (CNET, Centre Lannion B, 22 (France)); Sadou, S. (CNET, Centre Lannion B, 22 (France))

    1993-04-01

    Thermodynamic considerations show that, even at room temperature, pure aluminium can react with nitrogen to form the aluminium nitride AlN. However, pure aluminium does not exist: it is always surrounded by an alumina shell that protects the metal from further reactions. Furthermore, in the hypothesis where one has been able to make aluminium react with nitrogen, an aluminium nitride shell will protect as well the metal core from further oxidation. Prompted by the Lanxide process allowing to form Al/Al[sub 2]O[sub 3] composites, we have mixed aluminium powders with lithium salts, and easily synthesized pure aluminium nitride by heating the mixed powders in nitrigen at temperatures ranging from 800 to 1200 C. Starting from aluminium powders with a specific area ranging from 0.3 to 4 m[sup 2]/g, we have been able to produce aluminium nitride with specific are ranging from 1 to 20 m[sup 2]/g. Mixed with Y[sub 2]O[sub 3]-CaO and sintered at 1720 C in N[sub 2], we obtained AlN ceramics owning 92% density and 160 W/m.K thermal conductivity. (orig.).

  7. Effect of Bottom Ash and Fly Ash as a Susceptor Material on The Properties of Aluminium Based Composites Prepared by Microwave Sintering

    Directory of Open Access Journals (Sweden)

    Wan Muhammad Wan Nur Azrina Binti

    2017-01-01

    Full Text Available The use of aluminium as a single material in automotive applications is not suitable without a mixture with reinforcement materials that can support the properties at high temperature. In this study, aluminium based composite were prepared with weight percentage of SiC reinforcement, varying from 5 to 20 wt%. Aluminium powder and reinforcement materials were mixed using ball milling machine with speed of 100 rpm for 2 hours. The powder mixture were then compressed at pressure 4 tonnes with 5 minutes holding time. The compact samples were sintered using microwave sintering technique. Microwave sintering techniques in this study using two different types of susceptor materials that are bottom ash and fly ash. Sintered aluminium based composites using bottom ash susceptor material involving the sintering temperature of 526 °C for 30 minutes whereas for the samples sintered using fly ash susceptor material, involving a temperature of 523 °C for 15 minutes. From the result, the sintered samples using fly ash susceptor material, showed higher density with a value of 2.1933 g/cm3 compared to bottom ash 2.0002 g/cm3 and having the higher hardness value 72.1315 HV compared to bottom ash 50.0511HV. The using of fly ash could affect the heating rate during the sintering process which could influence the properties of aluminium based composites. In conclusion, the type of susceptor could affect the physical and mechanical properties of aluminum-based composite reinforced with silicon carbide.

  8. Sintering of dioxide pellets in an oxidizing atmosphere (CO2)

    International Nuclear Information System (INIS)

    Santos, G.R.T.

    1992-01-01

    This work consists in the study of the sintering process of U O 2 pellets in an oxidizing atmosphere. Sintering tests were performed in an CO 2 atmosphere and the influence of temperature and time on the pellets density and microstructure were verified. The results obtained were compared to those from the conventional sintering process and its efficiency was confirmed. (author)

  9. Effect of increasing lanthanum substitution and the sintering ...

    Indian Academy of Sciences (India)

    Administrator

    Young's modulus of the microwave sintered samples (8.8–12.5 and 160–180 GPa) are higher than that for conventional sintered (8–10 and 135–155 GPa) samples. Keywords. Microwave sintering; La-substituted SBTi ceramics; mechanical properties. 1. Introduction. In recent years, bismuth layer-structured ferroelectrics.

  10. Nitride alloy layer formation of duplex stainless steel using nitriding process

    Science.gov (United States)

    Maleque, M. A.; Lailatul, P. H.; Fathaen, A. A.; Norinsan, K.; Haider, J.

    2018-01-01

    Duplex stainless steel (DSS) shows a good corrosion resistance as well as the mechanical properties. However, DSS performance decrease as it works under aggressive environment and at high temperature. At the mentioned environment, the DSS become susceptible to wear failure. Surface modification is the favourable technique to widen the application of duplex stainless steel and improve the wear resistance and its hardness properties. Therefore, the main aim of this work is to nitride alloy layer on the surface of duplex stainless steel by the nitriding process temperature of 400°C and 450°C at different time and ammonia composition using a horizontal tube furnace. The scanning electron microscopy and x-ray diffraction analyzer are used to analyse the morphology, composition and the nitrided alloy layer for treated DSS. The micro hardnesss Vickers tester was used to measure hardness on cross-sectional area of nitrided DSS. After nitriding, it was observed that the hardness performance increased until 1100 Hv0.5kgf compared to substrate material of 250 Hv0.5kgf. The thickness layer of nitride alloy also increased from 5μm until 100μm due to diffusion of nitrogen on the surface of DSS. The x-ray diffraction results showed that the nitride layer consists of iron nitride, expanded austenite and chromium nitride. It can be concluded that nitride alloy layer can be produced via nitriding process using tube furnace with significant improvement of microstructural and hardness properties.

  11. Effects of sintering temperature on the mechanical properties of sintered NdFeB permanent magnets prepared by spark plasma sintering

    International Nuclear Information System (INIS)

    Wang, G.P.; Liu, W.Q.; Huang, Y.L.; Ma, S.C.; Zhong, Z.C.

    2014-01-01

    Sintered NdFeB-based permanent magnets were fabricated by spark plasma sintering (SPS) and a conventional method to investigate the mechanical and magnetic properties. The experimental results showed that sintered NdFeB magnet prepared by the spark plasma sintering (SPS NdFeB) possesses a better mechanical properties compared to the conventionally sintered one, of which the maximum value of bending strength and Vickers hardness was 402.3 MPa and 778.1 MPa, respectively. The effects of sintering temperature on bending strength and Vickers hardness were investigated. It was shown that the bending strength firstly increases to the maximum value and then decreases with the increase of sintering temperature in a certain range. The investigations of microstructures and mechanical properties indicated that the unique sintering mechanism in the SPS process is responsible for the improvement of mechanical properties of SPS NdFeB. Furthermore, the relations between the mechanical properties and relevant microstructure have been analyzed based on the experimental fact. - Highlights: • Studied the sintering temperature effect on strengthening mechanism of NdFeB magnet firstly. • It showed that sintering temperature may effectively affect the mechanical properties. • The maximum bending strength and Vickers hardness was 402.3 MPa and 778.1 MPa, respectively

  12. Effects of sintering temperature on the mechanical properties of sintered NdFeB permanent magnets prepared by spark plasma sintering

    Energy Technology Data Exchange (ETDEWEB)

    Wang, G.P., E-mail: wgp@jxnu.edu.cn [College of Physics and Communication Electronics, Jiangxi Normal University, Nanchang 330022 (China); Liu, W.Q. [Key Laboratory of Advanced Functional Materials Science and Engineering, Ministry of Education, Beijing University of Technology, Beijing 100022 (China); Huang, Y.L.; Ma, S.C.; Zhong, Z.C. [School of Materials Science and Engineering, Nanchang Hangkong University, Nanchang 330063 (China)

    2014-01-15

    Sintered NdFeB-based permanent magnets were fabricated by spark plasma sintering (SPS) and a conventional method to investigate the mechanical and magnetic properties. The experimental results showed that sintered NdFeB magnet prepared by the spark plasma sintering (SPS NdFeB) possesses a better mechanical properties compared to the conventionally sintered one, of which the maximum value of bending strength and Vickers hardness was 402.3 MPa and 778.1 MPa, respectively. The effects of sintering temperature on bending strength and Vickers hardness were investigated. It was shown that the bending strength firstly increases to the maximum value and then decreases with the increase of sintering temperature in a certain range. The investigations of microstructures and mechanical properties indicated that the unique sintering mechanism in the SPS process is responsible for the improvement of mechanical properties of SPS NdFeB. Furthermore, the relations between the mechanical properties and relevant microstructure have been analyzed based on the experimental fact. - Highlights: • Studied the sintering temperature effect on strengthening mechanism of NdFeB magnet firstly. • It showed that sintering temperature may effectively affect the mechanical properties. • The maximum bending strength and Vickers hardness was 402.3 MPa and 778.1 MPa, respectively.

  13. 3Y-TZP/Si2N2O composite obtained by pressureless sintering

    International Nuclear Information System (INIS)

    Santos, Carlos Augusto Xavier

    2006-01-01

    Zirconia 3YTZP presents excellent properties at room temperature. These properties decrease as the temperature increases because high temperature acts negatively over the stress induced transformation toughening in the matrix. The addition of Si 3 N 4 and SiC in a Y-TZP matrix is very interesting because leads to formation of silicon oxynitride and it increases the mechanical properties like toughness and hardness. Certainly the mechanical properties increment is limited by several difficulties which have appeared during processing and heating of these materials. This paper studies the Y-TZP/Si 2 N 2 0 pressureless sintered composite, under different temperatures, showing the behavior of 20 vol %Si 3 N 4 -SiC when added in YTZP matrix and heated under no pressure system. Al 2 O 3 and Y 2 O 3 were used as sintering aids. The mixture was milled and molded by cold isostatic pressure. Samples were heated at 1500 deg, 1600 deg and 17000 deg C x 2h without pressure under atmospheric conditions using Si 3 N 4 bed-powder. Samples were characterized by XRD and density, hardness, toughness, bending strength were measured. The structure of the material was observed in SEMITEM/EPMA to verify the distribution and composition of the materials in the composite and the contact between filler surface and the matrix. The formation of SiON 2 was observed in the sintered material due to reaction between both nitride and carbide with Y - TZP matrix. Furthermore the material showed an increment of both hardness and toughness as temperature increases. The samples presented considerable resistance to oxidation below 1000 deg C. (author)

  14. Effects of Laser Treatment on the Bond Strength of Differently Sintered Zirconia Ceramics.

    Science.gov (United States)

    Dede, Doğu Ömür; Yenisey, Murat; Rona, Nergiz; Öngöz Dede, Figen

    2016-07-01

    The purpose of this study was to investigate the effects of carbon dioxide (CO2) and Erbium-doped yttrium aluminum garnet (Er:YAG) laser irradiations on the shear bond strength (SBS) of differently sintered zirconia ceramics to resin cement. Eighty zirconia specimens were prepared, sintered in two different periods (short = Ss, long = Ls), and divided into four treatment groups (n = 10 each). These groups were (a) untreated (control), (b) Er:YAG laser irradiated with 6 W power for 5 sec, (c) CO2 laser with 2 W power for 10 sec, (d) CO2 laser with 4 W power for 10 sec. Scanning electron microscope (SEM) images were recorded for each of the eight groups. Eighty composite resin discs (3 × 3 mm) were fabricated and cemented with an adhesive resin cement to ceramic specimens. The SBS test was performed after specimens were stored in water for 24 h by an universal testing machine at a crosshead speed of 1 mm/min. Data were statistically analyzed with two way analysis of variance (ANOVA) and Tukey honest significant difference (HSD) test (α = 0.05). According to the ANOVA, the sintering time, surface treatments and their interaction were statistically significant (p  0.05). Variation in sintering time from 2.5 to 5.0 h may have influenced the SBS of Yttrium-stabilized tetragonal zirconia polycrystalline (Y-TZP) ceramics. Although CO2 and Er:YAG laser irradiation techniques may increase the SBS values of both tested zirconia ceramics, they are recommended for clinicians as an alternative pretreatment method.

  15. Sintering evaluation of spinel MA nanostructured obtained via synthesis of combustion in solution; Avaliacao da sinterizacao de espinelio MA nanoestruturado obtido via combustao em solucao

    Energy Technology Data Exchange (ETDEWEB)

    Vitor, P.A.M.; Braganca, S.R.; Bergmann, C.P., E-mail: pedroaugusto89@hotmail.com [Universidade Federal do Rio Grande do Sul (LACER/UFRGS), Porto Alegre, RS (Brazil). Laboratorio de Materiais Ceramicos

    2016-07-01

    Specimens were shaped from powders of spinel MA (MgAl2O4) obtained via synthesis combustion in solution (SCS) from the trio chemical precursor aluminum nitrate, magnesium nitrate and sucrose in water, and then sintered at different temperatures between 1350 and 1650 ° C. Were evaluated the physical properties (density, porosity, water absorption and linear shrinkage), mechanical (flexural 4 points), and the microstructures (SEM) as a function of sintering temperature. The densification increased with growing the value of the sintering temperature, wherein the temperature to 1650 ° C had the highest flexural strength and higher elastic modulus: 51.33 (± 6.83) and 26.16 MPa (± 5.06) GPa respectively. The study confirmed the microstructure of the densification of the particles, confirming the purity and nature of nanometric powders obtained via the SCS. (author)

  16. Effect of additives in sintering UO2-7wt%Gd2O3 fuel pellets

    International Nuclear Information System (INIS)

    Santos, L.R.; Riella, H.G.

    2009-01-01

    Gadolinium has been used as burnable poison for reactivity control in modern PWRs. The incorporation of Gd 2 O 3 powder directly into the UO 2 powder enables longer fuel cycles and optimized fuel utilization. Nevertheless, processing by this method leads to difficulties while obtaining sintered pellets with the minimum required density. The process for manufacturing UO 2 - Gd 2 O 3 generates scraps that should be reused. The main scraps are green and sintered pellets, which must be calcined to U 3 O 8 to return to the fabrication process. Also, the incorporation of Gd 2 O 3 in UO 2 requires the use of an additive to improve the sintering process, in order to achieve the physical properties specified for the mixed fuel, mainly density and microstructure. This paper describes the effect of the addition of fabrication scraps on the properties of the UO 2 -Gd 2 O 3 fuel. Aluminum hydroxide Al(OH) 3 was also incorporated to the fuel as a sintering aid. The results shown that the use of 2000 ppm of Al(OH) 3 as additive allow to fabricate good pellets with up to 10 wt% of recycled scraps. (author)

  17. Mechanical characteristics of microwave sintered silicon carbide

    Indian Academy of Sciences (India)

    Unknown

    tions ranging from kiln furniture to membrane material. Keywords. Microwave sintering; biaxial flexure; silicon carbide. 1. Introduction. Silicon carbide (SiC) ceramics is a very well known candidate material for a structural application. However, due to (i) poor densification due to highly directional bonding, (ii) susceptibility of ...

  18. Sintering behavior of LZSA glass-ceramics

    Directory of Open Access Journals (Sweden)

    Oscar Rubem Klegues Montedo

    2009-06-01

    Full Text Available The LZSA glass-ceramic system (Li2O-ZrO2-SiO2-Al2O 3 shows interesting properties, such as good chemical resistance, low thermal expansion, high abrasion resistance, and a low dielectric constant. However, in order to obtain a high performance material for specific applications, the sintering behavior must be better understood so that the porosity may be reduced and other properties improved. In this context, a sintering investigation for a specific LZSA glass-ceramic system composition was carried out. A 18.8Li2O-8.3ZrO2-64.2SiO2-8.7Al 2O3 glass was prepared by melting the solids, quenching the melt in water, and grinding the resulting solid in order to obtain a powder (3.68 μm average particle diameter. Subsequently, the glass powder was characterized (chemical analysis and determination of thermal properties and the sintering behavior was investigated using optical non-contact dilatometry measurements. The results showed that the crystallization process strongly reduced the sintering in the temperature interval from 785 to 940 °C, and a maximum thermal shrinkage of 15.4% was obtained with operating conditions of 1020 °C and 180 minutes.

  19. Low temperature sintering of hyperstoichiometric uranium dioxide

    International Nuclear Information System (INIS)

    Chevrel, H.

    1991-12-01

    In the lattice of uranium dioxide with hyperstoichiometric oxygen content (UO 2+x ), each additional oxygen atoms is introduced by shifting two anions from normal sites to interstitial ones, thereby creating two oxygen vacancies. The point defects then combine to form complex defects comprising several interstitials and vacancies. The group of anions (3x) in the interstitial position participate in equilibria promoting the creation of uranium vacancies thereby considerably increasing uranium self-diffusion. However, uranium grain boundaries diffusion governs densification during the first two stages of sintering of uranium dioxide with hyperstoichiometric oxygen content, i.e., up to 93% of the theoretical density. Surface diffusion and evaporation-condensation, which are considerably accentuated by the hyperstoichiometric deviation, play an active role during sintering by promoting crystalline growth during the second and third stages of sintering. U 8 O 8 can be added to adjust the stoichiometry and to form a finely porous structure and thus increase the pore area subjected to surface phenomena. The composition with an O/U ratio equal to 2.25 is found to densify the best, despite a linear growth in sintering activation energy with hyperstoichiometric oxygen content, increasing from 300 kj.mol -1 for UO 2.10 to 440 kJ.mol -1 for UO 2.25 . Seeds can be introduced to obtain original microstructures, for example the presence of large grains in small-grain matrix

  20. Study of ceramics sintering under high pressures

    International Nuclear Information System (INIS)

    Kunrath Neto, A.O.

    1990-01-01

    A systematic study was made on high pressure sintering of ceramics in order to obtain materials with controlled microstructure, which are not accessible by conventional methods. Some aspects with particular interest were: to achieve very low porosity, with fine grains; to produce dispersed metastable and denser phases which can act as toughening agents; the study of new possibilities for toughening enhancement. (author)

  1. Deformation behavior of sintered nanocrystalline silver layers

    International Nuclear Information System (INIS)

    Zabihzadeh, S.; Van Petegem, S.; Duarte, L.I.; Mokso, R.; Cervellino, A.; Van Swygenhoven, H.

    2015-01-01

    The microstructure of porous silver layers produced under different low temperature pressure-assisted sintering conditions is characterized and linked with the mechanical behavior studied in situ during X-ray diffraction. Peak profile analysis reveals important strain recovery and hardening mechanism during cyclic deformation. The competition between both mechanisms is discussed in terms of porosity and grain size

  2. Air-sintering mechanisms of chromites

    Energy Technology Data Exchange (ETDEWEB)

    Chick, L.A.; Bates, J.L.; Maupin, G.D.

    1991-07-01

    The sintering behaviors of La{sub 1-x}Sr{sub x}CrO{sub 3} and Y{sub 1-x}Ca{sub x}CrO{sub 3} in air at 1550{degrees}C are described as functions of alkaline earth concentration and chromium enrichment or depletion. Vapor-, liquid-, and solid-phase mass transport mechanisms appear to be operative in both systems. Liquid-phase sintering appears dominant an Y{sub 1-x}Ca{sub x}CrO{sub 3} with x = 0.15 to 0.40, especially with Cr enrichment. Either vapor- or solid-phase transport may dominate in the La{sub 1-x}Sr{sub x}CrO{sub 3} system. Slight depletion or enrichment of Cr in both systems has dramatic effects on air-sintered density and microstructure, probably due to modulation of vapor-phase transport and liquid-phase formation. Substantial Cr depletion enhances sintering. 10 refs., 9 figs.

  3. Mechanical characterization of microwave sintered zinc oxide

    Indian Academy of Sciences (India)

    Unknown

    Keywords. Zinc oxide; microwave sintering; microhardness. 1. Introduction. The application of microwave energy for the processing of ceramics has become an attractive area of research and innovation recently. The major advantages of the micro- wave processing of ceramic materials are accelerated densification rate as a ...

  4. Laser Sintering Technology and Balling Phenomenon.

    Science.gov (United States)

    Oyar, Perihan

    2018-02-01

    The aim of this review was to evaluate the balling phenomenon which occurs typically in Selective Laser Sintering (SLS). The balling phenomenon is a typical SLS defect, and observed in laser sintered powder, significantly reduces the quality of SLS, and hinders the further development of SLS Technology. Electronic database searches were performed using Google Scholar. The keywords "laser sintering, selective laser sintering, direct metal laser melting, and balling phenomenon" were searched in title/abstract of publications, limited to December 31, 2016. The inclusion criteria were SLS, balling phenomenon, some alloys (such as Cr-Co, iron, stainless steel, and Cu-based alloys) mechanical properties, microstructure and bond strength between metal-ceramic crown, laboratory studies, full text, and in English language. A total of 100 articles were found the initial search and yielded a total of 50 studies, 30 of which did not fulfill the inclusion criteria and were therefore excluded. In addition, 20 studies were found by screening the reference list of all included publications. Finally, 40 studies were selected for this review. The method in question is regulated by powder material characteristics and the conditions of laser processing. The procedure of formation, affecting factors, and the mechanism of the balling effect are very complex.

  5. Microstructural and hardness behavior of graphene-nanoplatelets/aluminum composites synthesized by mechanical alloying

    International Nuclear Information System (INIS)

    Pérez-Bustamante, R.; Bolaños-Morales, D.; Bonilla-Martínez, J.; Estrada-Guel, I.; Martínez-Sánchez, R.

    2014-01-01

    Highlights: • Pure aluminum was reinforced with graphene-platelets by using mechanical milling. • The composites were studied after sintering condition. • Milling time and graphene-platelet enhance the mechanical behavior of the composites. - Abstract: Graphene can be considered as an ideal reinforcement for the production of composites due to its outstanding mechanical properties. These characteristics offer an increased opportunity for their study in the production of metal matrix composites (MMCs). In this research, the studied composites were produced by mechanical alloying (MA). The employed milling times were of 1, 3 and 5 h. GNPs were added in 0.25, 0.50 and 1.0 wt% into an aluminum powder matrix. Milled powders were cold consolidated and subsequently sintered. Composites were microstructurally characterized with Raman spectroscopy and electron microscopy and X-ray diffraction. The hardness behavior in composites was evaluated with a Vickers micro-hardness test. A homogeneous dispersion of graphene during MA and the proper selection of sintering conditions were considered to produce optimized composites. The obtained results with electron microscopy indicate a homogeneous dispersion of GNPs into the aluminum matrix. Analyses showed GNPs edges where the structure of the graphene layers conserved after MA is observed

  6. Microstructural and hardness behavior of graphene-nanoplatelets/aluminum composites synthesized by mechanical alloying

    Energy Technology Data Exchange (ETDEWEB)

    Pérez-Bustamante, R. [Centro de Investigación en Materiales Avanzados (CIMAV), Laboratorio Nacional de Nanotecnología, Miguel de Cervantes No. 120, C.P. 31109 Chihuahua, Chih. (Mexico); Bolaños-Morales, D.; Bonilla-Martínez, J. [Universidad Autónoma de Chihuahua (UACH), Facultad de Ingeniería, Circuito No. 1 Nuevo Campus Universitario, C.P. 31125 Chihuahua, Chih. (Mexico); Estrada-Guel, I. [Centro de Investigación en Materiales Avanzados (CIMAV), Laboratorio Nacional de Nanotecnología, Miguel de Cervantes No. 120, C.P. 31109 Chihuahua, Chih. (Mexico); Martínez-Sánchez, R., E-mail: roberto.martinez@cimav.edu.mx [Centro de Investigación en Materiales Avanzados (CIMAV), Laboratorio Nacional de Nanotecnología, Miguel de Cervantes No. 120, C.P. 31109 Chihuahua, Chih. (Mexico)

    2014-12-05

    Highlights: • Pure aluminum was reinforced with graphene-platelets by using mechanical milling. • The composites were studied after sintering condition. • Milling time and graphene-platelet enhance the mechanical behavior of the composites. - Abstract: Graphene can be considered as an ideal reinforcement for the production of composites due to its outstanding mechanical properties. These characteristics offer an increased opportunity for their study in the production of metal matrix composites (MMCs). In this research, the studied composites were produced by mechanical alloying (MA). The employed milling times were of 1, 3 and 5 h. GNPs were added in 0.25, 0.50 and 1.0 wt% into an aluminum powder matrix. Milled powders were cold consolidated and subsequently sintered. Composites were microstructurally characterized with Raman spectroscopy and electron microscopy and X-ray diffraction. The hardness behavior in composites was evaluated with a Vickers micro-hardness test. A homogeneous dispersion of graphene during MA and the proper selection of sintering conditions were considered to produce optimized composites. The obtained results with electron microscopy indicate a homogeneous dispersion of GNPs into the aluminum matrix. Analyses showed GNPs edges where the structure of the graphene layers conserved after MA is observed.

  7. Modelling structure and properties of amorphous silicon boron nitride ceramics

    Directory of Open Access Journals (Sweden)

    Johann Christian Schön

    2011-06-01

    Full Text Available Silicon boron nitride is the parent compound of a new class of high-temperature stable amorphous ceramics constituted of silicon, boron, nitrogen, and carbon, featuring a set of properties that is without precedent, and represents a prototypical random network based on chemical bonds of predominantly covalent character. In contrast to many other amorphous materials of technological interest, a-Si3B3N7 is not produced via glass formation, i.e. by quenching from a melt, the reason being that the binary components, BN and Si3N4, melt incongruently under standard conditions. Neither has it been possible to employ sintering of μm-size powders consisting of binary nitrides BN and Si3N4. Instead, one employs the so-called sol-gel route starting from single component precursors such as TADB ((SiCl3NH(BCl2. In order to determine the atomic structure of this material, it has proven necessary to simulate the actual synthesis route.Many of the exciting properties of these ceramics are closely connected to the details of their amorphous structure. To clarify this structure, it is necessary to employ not only experimental probes on many length scales (X-ray, neutron- and electron scattering; complex NMR experiments; IR- and Raman scattering, but also theoretical approaches. These address the actual synthesis route to a-Si3B3N7, the structural properties, the elastic and vibrational properties, aging and coarsening behaviour, thermal conductivity and the metastable phase diagram both for a-Si3B3N7 and possible silicon boron nitride phases with compositions different from Si3N4: BN = 1 : 3. Here, we present a short comprehensive overview over the insights gained using molecular dynamics and Monte Carlo simulations to explore the energy landscape of a-Si3B3N7, model the actual synthesis route and compute static and transport properties of a-Si3BN7.

  8. Yttrium oxide transparent ceramics by low-temperature microwave sintering

    International Nuclear Information System (INIS)

    Luo, Junming; Zhong, Zhenchen; Xu, Jilin

    2012-01-01

    Graphical abstract: The figure shows the SEM photos of the surfaces of the Y 2 O 3 transparent ceramic samples obtained by microwave sintering and vacuum sintering. It is clearly demonstrated that the grain distribution of the vacuum sintering sample is not uniform with the smallest and the largest particle size at about 2 μm and 15 μm respectively, while the grain distribution of microwave sintering sample is uniform with the average diameter at about 2–4 μm (the smallest reported so far) and with no abnormal growth-up or coarsening phenomenon. We have further found out that the smaller the grain size, the higher the mechanical and optical properties. Display Omitted Highlights: ► The microwave sintering temperature of the sample is lower compared with vacuum. ► The microwave sintering time of the sample is shorter compared with vacuum. ► The mechanical properties of the microwave sintering sample is improved greatly. ► The Y 2 O 3 grain of microwave sintering sample is the smallest reported so far. -- Abstract: Yttrium oxide (Y 2 O 3 ) transparent ceramics samples have been successfully fabricated by microwave sintering processing at relatively low temperatures. In comparison with the vacuum sintering processing, Y 2 O 3 transparent ceramics can be obtained by microwave sintering at lower sintering temperature and shorter sintering time, and they possess higher transmittances and mechanical properties. The technologies of low-temperature microwave sintering and the relationships of the microstructures and properties of the specified samples have been investigated in detail. We have found out that the low-temperature microwave sintering technique has its obvious advantages over the conventional methods in manufacturing yttrium oxide transparent ceramics.

  9. Synthesis of ternary nitrides by mechanochemical alloying

    DEFF Research Database (Denmark)

    Jacobsen, C.J.H.; Zhu, J.J.; Lindelov, H.

    2002-01-01

    nitrides by mechanochemical alloying of a binary transition metal nitride (MxN) with an elemental transition metal. In this way, we have been able to prepare Fe3Mo3N and Co3Mo3N by ball-milling of Mo2N with Fe and Co, respectively. The transformation sequence from the starting materials ( the binary...

  10. Atomic Resolution Microscopy of Nitrides in Steel

    DEFF Research Database (Denmark)

    Danielsen, Hilmar Kjartansson

    2014-01-01

    MN and CrMN type nitride precipitates in 12%Cr steels have been investigated using atomic resolution microscopy. The MN type nitrides were observed to transform into CrMN both by composition and crystallography as Cr diffuses from the matrix into the MN precipitates. Thus a change from one...

  11. PECVD silicon nitride diaphragms for condenser microphones

    NARCIS (Netherlands)

    Scheeper, P.R.; Scheeper, P.R.; Voorthuyzen, J.A.; Voorthuyzen, J.A.; Bergveld, Piet

    1991-01-01

    The application of plasma-enhanced chemical vapour deposited (PECVD) silicon nitride as a diaphragm material for condenser microphones has been investigated. By means of adjusting the SiH4/NH3 gas-flow composition, silicon-rich silicon nitride films have been obtained with a relatively low tensile

  12. Fusion bonding of silicon nitride surfaces

    DEFF Research Database (Denmark)

    Reck, Kasper; Østergaard, Christian; Thomsen, Erik Vilain

    2011-01-01

    While silicon nitride surfaces are widely used in many micro electrical mechanical system devices, e.g. for chemical passivation, electrical isolation or environmental protection, studies on fusion bonding of two silicon nitride surfaces (Si3N4–Si3N4 bonding) are very few and highly application...

  13. III-nitride devices and nanoengineering

    National Research Council Canada - National Science Library

    Feng, Zhe Chuan

    2008-01-01

    ... devices applications. III-Nitrides-based industry is forming up and new economic developments these materials are promising. It is expected that III-Nitrides-based LEDs might replace the traditional light bulbs to a revolution in lightings and change entire human life in this century, similar to Edison's invention of the electric lig...

  14. TiO2 doped UO2 fuels sintered by spark plasma sintering

    Science.gov (United States)

    Yao, Tiankai; Scott, Spencer M.; Xin, Guoqing; Lian, Jie

    2016-02-01

    UO2 fuels doped with oxide additives Cr2O3 and TiO2 display larger grain size, improving fission product retention capability and thus accident tolerance. Spark plasma sintering (SPS) was applied to consolidate TiO2-doped UO2 fuel pellets with 0.5 wt % dopant concentration, above its solubility, in order to induce eutectic phase formation and promote sintering kinetics. The grain size can reach 80 μm by sintering at 1700 °C for 20 min, and liquid U-Ti-O eutectic phase occurs at the triple junction of grain boundaries and significantly improves grain growth during sintering. The oxide additive also impedes the reduction of the initial hyperstoichiometric fuel powders to more stoichiometric fuel pellets upon SPS process. Thermal-mechanical properties of the sintered doped fuel pellets including thermal conductivity and hardness are measured and compared with undoped fuel pellets. The enlarged grain size (80 μm) and densification within short sintering duration highlight the immense possibility of SPS in fabricating large grained UO2 fuel pellets to improve fuel performance.

  15. Sintering uranium oxide using a preheating step

    International Nuclear Information System (INIS)

    Jensen, N.J.; Nivas, Y.; Packard, D.R.

    1977-01-01

    Compacted pellets of uranium oxide or uranium oxide with one or more additives are heated in a kiln in a process having a preheating step, a sintering step, a reduction step, and a cooling step in a controlled atmosphere. The process is practiced to give a range of temperature and atmosphere conditions for obtaining optimum fluoride removal from the compacted pellets along with optimum sintering in a single process. The preheating step of this process is conducted in a temperature range of about 600 0 to about 900 0 C and the pellets are held for at least twenty min, and preferably about 60 min, in an atmosphere having a composition in the range of about 10 to about 75 vol % hydrogen with the balance being carbon dioxide. The sintering step is conducted at a temperature in the range of about 900 0 C to 1500 0 C in the presence of an atmosphere having a composition in the range of about 0.5 to about 90 vol % hydrogen with the balance being carbon dioxide. The reduction step reduces the oxygen to metal ratio of the pellets to a range of about 1.98 to 2.10:1 and this is accomplished by gradually cooling the pellets for about 30 to about 120 min from the temperature of the sintering step to about 1100 0 C in an atmosphere of about 10 to 90 vol % hydrogen with the balance being carbon dioxide. Thereafter the pellets are cooled to about 100 0 C under a protective atmosphere, and in one preferred practice the same atmosphere used in the reduction step is used in the cooling step. The preheating, sintering and reduction steps may also be conducted with their respective atmospheres having an initial additional component of water vapor and the water vapor can comprise up to about 20 vol %

  16. Comparative sinterability of combustion synthesized and commercial titanium carbides

    International Nuclear Information System (INIS)

    Manley, B.W.

    1984-11-01

    The influence of various parameters on the sinterability of combustion synthesized titanium carbide was investigaged. Titanium carbide powders, prepared by the combustion synthesis process, were sintered in the temperature range 1150 to 1600 0 C. Incomplete combustion and high oxygen contents were found to be the cause of reduced shrinkage during sintering of the combustion syntheized powders when compared to the shrinkage of commercial TiC. Free carbon was shown to inhibit shrinkage. The activation energy for sintering was found to depend on stoichiometry (C/Ti). With decreasing C/Ti, the rate of sintering increased. 29 references, 16 figures, 13 tables

  17. Hard carbon nitride and method for preparing same

    Science.gov (United States)

    Haller, E.E.; Cohen, M.L.; Hansen, W.L.

    1992-05-05

    Novel crystalline [alpha](silicon nitride-like)-carbon nitride and [beta](silicon nitride-like)-carbon nitride are formed by sputtering carbon in the presence of a nitrogen atmosphere onto a single crystal germanium or silicon, respectively, substrate. 1 figure.

  18. Cathodic Cage Plasma Nitriding: An Innovative Technique

    Directory of Open Access Journals (Sweden)

    R. R. M. de Sousa

    2012-01-01

    Full Text Available Cylindrical samples of AISI 1020, AISI 316, and AISI 420 steels, with different heights, were simultaneously treated by a new technique of ionic nitriding, entitled cathodic cage plasma nitriding (CCPN, in order to evaluate the efficiency of this technique to produce nitrided layers with better properties compared with those obtained using conventional ionic nitriding technique. This method is able to eliminate the edge effect in the samples, promoting a better uniformity of temperature, and consequently, a smaller variation of the thickness/height relation can be obtained. The compound layers were characterized by X-ray diffraction, optical microscopy, and microhardness test profile. The results were compared with the properties of samples obtained with the conventional nitriding, for the three steel types. It was verified that samples treated by CCPN process presented, at the same temperature, a better uniformity in the thickness and absence of the edge effect.

  19. Continuum modeling of boron nitride nanotubes

    International Nuclear Information System (INIS)

    Song, J; Wu, J; Hwang, K C; Huang, Y

    2008-01-01

    Boron nitride nanotubes display unique properties and have many potential applications. A finite-deformation shell theory is developed for boron nitride nanotubes directly from the interatomic potential to account for the effect of bending and curvature. Its constitutive relation accounts for the nonlinear, multi-body atomistic interactions, and therefore can model the important effect of tube chirality and radius. The theory is then used to determine whether a single-wall boron nitride nanotube can be modeled as a linear elastic isotropic shell. Instabilities of boron nitride nanotubes under different loadings (e.g., tension, compression, and torsion) are also studied. It is shown that the tension instability of boron nitride nanotubes is material instability, while the compression and torsion instabilities are structural instabilities.

  20. Phase transformation of NiTi alloys during vacuum sintering

    Science.gov (United States)

    Wang, Jun; Hu, Kuang

    2017-05-01

    The aim of this study is to ascertain the Phase transformation of NiTi alloys during vacuum sintering. NiTi shape memory alloys (SMA) of atomic ratio 1:1 were prepared through press forming and vacuum sintering with the mixture of Ni and Ti powders. Different samples were prepared by changing the sintering time and the sintering temperature. Phase and porosity of the samples were investigated by X-ray diffraction (XRD) and scanning electron microscope (SEM). The results show that in the process of sintering NiTi2 and Ni3Ti phases are formed firstly and then transform into NiTi phase. The quantity of NiTi2 and Ni3Ti phases gradually decreased but not eliminate completely with increase of sintering time. The porosity of specimen sintering at 900°C decreases slightly with increase of sintering time. With increase of sintering time the porosity of specimen sintering at 1050°C decreased firstly and then increased because of generation rich titanium liquid in the process of sintering.