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Sample records for single-photon-emitting diode operating

  1. Site-controlled InGaN/GaN single-photon-emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Lei; Deng, Hui, E-mail: dengh@umich.edu [Department of Physics, University of Michigan, 450 Church St., Ann Arbor, Michigan 48109 (United States); Teng, Chu-Hsiang; Ku, Pei-Cheng, E-mail: peicheng@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

    2016-04-11

    We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots. The device is fabricated from a planar light-emitting diode structure containing a single InGaN quantum well, using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.

  2. Experimental observations on long pulse intense ion diode operation

    International Nuclear Information System (INIS)

    Prono, D.S.; Clark, R.; Prestwich, K.

    1976-01-01

    An experiment in which a long pulse electron beam diode is converted to a reflex ion diode is reported. The results further substantiate the model of reflex ion diode behavior as well as extend the duration of ion mode operation to greater than 500 nsec

  3. Dual wavelength operation in diode-end-pumped hybrid vanadate ...

    Indian Academy of Sciences (India)

    Dual wavelength operation at 1062.8 nm and 1064.1 nm in a diode-pumped hybrid laser comprising of Nd3+-doped birefringent YVO4 and GdVO4 crystals is demon-strated. A detailed characterization of the laser is performed under CW and pulsed operation. Under Q-switching, 4 W of average power at 5 kHz repetition ...

  4. Characterisation of Plasma Filled Rod Pinch electron beam diode operation

    Science.gov (United States)

    MacDonald, James; Bland, Simon; Chittenden, Jeremy

    2016-10-01

    The plasma filled rod pinch diode (aka PFRP) offers a small radiographic spot size and a high brightness source. It operates in a very similar to plasma opening switches and dense plasma focus devices - with a plasma prefill, supplied via a number of simple coaxial plasma guns, being snowploughed along a thin rod cathode, before detaching at the end. The aim of this study is to model the PFRP and understand the factors that affect its performance, potentially improving future output. Given the dependence on the PFRP on the prefill, we are making detailed measurements of the density (1015-1018 cm-3), velocity, ionisation and temperature of the plasma emitted from a plasma gun/set of plasma guns. This will then be used to provide initial conditions to the Gorgon 3D MHD code, and the dynamics of the entire rod pinch process studied.

  5. Operation and maintenance manual for diode performance analysis program DIODE0

    International Nuclear Information System (INIS)

    Boyer, W.B.

    1977-03-01

    This program computes diode performance parameters for the e beam fusion accelerators HYDRA, PROTO I and PROTO II. The program works in conjunction with other programs in the data acquisition facility library. It reads the input data produced by the Tekronix R7012 Transient Digitizers off the disc. It then computes and plots the diode corrected voltages, impedances, powers, and energies

  6. Operation of AC Adapters Visualized Using Light-Emitting Diodes

    Science.gov (United States)

    Regester, Jeffrey

    2016-01-01

    A bridge rectifier is a diamond-shaped configuration of diodes that serves to convert alternating current(AC) into direct current (DC). In our world of AC outlets and DC electronics, they are ubiquitous. Of course, most bridge rectifiers are built with regular diodes, not the light-emitting variety, because LEDs have a number of disadvantages. For…

  7. Operational characteristics and analysis of the immersed-Bz diode on RITS-3.

    Energy Technology Data Exchange (ETDEWEB)

    Bruner, Nichelle " Nicki" ; Oliver, Bryan Velten; Portillo, Salvador; Puetz, Elizabeth A.; Johnston, Mark D.; Welch, Dale Robert; Rose, David Vincent; Cooper, G.M. (AWE, Aldermaston, Reading, United Kingdom); McLean, John (AWE, Aldermaston, Reading, United Kingdom); Rovang, Dean Curtis; Maenchen, John Eric

    2006-02-01

    The immersed-B{sub z} diode is being developed as a high-brightness, flash x-ray radiography source. This diode is a foil-less electron-beam diode with a long, thin, needle-like cathode inserted into the bore of a solenoid. The solenoidal magnetic field guides the electron beam emitted from the cathode to the anode while maintaining a small beam radius. The electron beam strikes a thin, high-atomic-number anode and produces bremsstrahlung. We report on an extensive series of experiments where an immersed-B{sub z} diode was fielded on the RITS-3 pulsed power accelerator, a 3-cell inductive voltage generator that produced peak voltages between 4 and 5 MV, {approx}140 kA of total current, and power pulse widths of {approx}50 ns. The diode is a high impedance device that, for these parameters, nominally conducts {approx}30 kA of electron beam current. Diode operating characteristics are presented and two broadly characterized operating regimes are identified: a nominal operating regime where the total diode current is characterized as classically bipolar and an anomalous impedance collapse regime where the total diode current is in excess of the bipolar limit and up to the full accelerator current. The operating regimes are approximately separated by cathode diameters greater than {approx}3 mm for the nominal regime and less than {approx} 3 mm for the anomalous impedance collapse regime. This report represents a compilation of data taken on RITS-3. Results from key parameter variations are presented in the main body of the report and include cathode diameter, anode-cathode gap, and anode material. Results from supporting parameter variations are presented in the appendices and include magnetic field strength, prepulse, pressure and accelerator variations.

  8. Operational characteristics and analysis of the immersed-Bz diode on RITS-3

    International Nuclear Information System (INIS)

    Bruner, Nichelle

    2006-01-01

    The immersed-B z diode is being developed as a high-brightness, flash x-ray radiography source. This diode is a foil-less electron-beam diode with a long, thin, needle-like cathode inserted into the bore of a solenoid. The solenoidal magnetic field guides the electron beam emitted from the cathode to the anode while maintaining a small beam radius. The electron beam strikes a thin, high-atomic-number anode and produces bremsstrahlung. We report on an extensive series of experiments where an immersed-B z diode was fielded on the RITS-3 pulsed power accelerator, a 3-cell inductive voltage generator that produced peak voltages between 4 and 5 MV, ∼140 kA of total current, and power pulse widths of ∼50 ns. The diode is a high impedance device that, for these parameters, nominally conducts ∼30 kA of electron beam current. Diode operating characteristics are presented and two broadly characterized operating regimes are identified: a nominal operating regime where the total diode current is characterized as classically bipolar and an anomalous impedance collapse regime where the total diode current is in excess of the bipolar limit and up to the full accelerator current. The operating regimes are approximately separated by cathode diameters greater than ∼3 mm for the nominal regime and less than ∼ 3 mm for the anomalous impedance collapse regime. This report represents a compilation of data taken on RITS-3. Results from key parameter variations are presented in the main body of the report and include cathode diameter, anode-cathode gap, and anode material. Results from supporting parameter variations are presented in the appendices and include magnetic field strength, prepulse, pressure and accelerator variations

  9. Improving Reliability of High Power Quasi-CW Laser Diode Arrays Operating in Long Pulse Mode

    Science.gov (United States)

    Amzajerdian, Farzin; Meadows, Byron L.; Barnes, Bruce W.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.; Baker, Nathaniel R.

    2006-01-01

    Operating high power laser diode arrays in long pulse regime of about 1 msec, which is required for pumping 2-micron thulium and holmium-based lasers, greatly limits their useful lifetime. This paper describes performance of laser diode arrays operating in long pulse mode and presents experimental data of the active region temperature and pulse-to-pulse thermal cycling that are the primary cause of their premature failure and rapid degradation. This paper will then offer a viable approach for determining the optimum design and operational parameters leading to the maximum attainable lifetime.

  10. Efficient high power operation of erbium 3 µm fibre laser diode-pumped at 975 nm

    NARCIS (Netherlands)

    Jackson, S.D.; King, T.A.; Pollnau, Markus

    2000-01-01

    Efficient CW operation of a 2.71 um Er,Pr:ZBLAN double-clad fibre laser pumped with a single diode laser operating at a wavelength of 975 nm is described. A maximum output power of 0.5 W and a slope efficiency of 25% (with respect to the launched pump power) were obtained. Threshold pump powers of <

  11. Red-light-emitting laser diodes operating CW at room temperature

    Science.gov (United States)

    Kressel, H.; Hawrylo, F. Z.

    1976-01-01

    Heterojunction laser diodes of AlGaAs have been prepared with threshold current densities substantially below those previously achieved at room temperature in the 7200-8000-A spectral range. These devices operate continuously with simple oxide-isolated stripe contacts to 7400 A, which extends CW operation into the visible (red) portion of the spectrum.

  12. Red-light-emitting laser diodes operating cw at room temperature

    International Nuclear Information System (INIS)

    Kressel, H.; Hawrylo, F.Z.

    1976-01-01

    Heterojunction laser diodes of AlGaAs have been prepared with threshold current densities substantially below those previously achieved at room temperature in the 7200 to 8000-A spectral range. These devices operate cw with simple oxide-isolated stripe contacts to 7400 A, which extends cw operation for the first time into the visible (red) portion of the spectrum

  13. Effect of thermal processes on critical operation conditions of high-power laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Parashchuk, V V [Institute of Physics, Belarus Academy of Sciences, Minsk (Belarus); Vu Doan Mien [Institute of Materials Science, Vietnamese Academy of Science and Technology, Hanoi (Viet Nam)

    2013-10-31

    Using numerical and analytical techniques in a threedimensional approximation, we have modelled the effect of spatial thermoelastic stress nonuniformity in a laser diode – heat sink system on the output characteristics of the device in different operation modes. We have studied the influence of the pulse duration, the geometry of the laser system and its thermophysical parameters on the critical pump current density, in particular for state-of-the-art heat conductive substrate materials. The proposed approach has been used to optimise the laser diode assembly process in terms of the quality of laser crystal positioning (bonding) on a heat sink. (lasers)

  14. Rod-pinch diode operation at 2 to 4 MV for high resolution pulsed radiography

    International Nuclear Information System (INIS)

    Young, F.C.; Commisso, R.J.; Allen, R.J.; Mosher, D.; Swanekamp, S.B.; Cooperstein, G.; Bayol, F.; Charre, P.; Garrigues, A.; Gonzales, C.; Pompier, F.; Vezinet, R.

    2002-01-01

    The rod-pinch diode is operated successfully at peak voltages of 2.4-4.4 MV for peak electrical currents of 55-135 kA delivered to the diode. At 4 MV, tungsten anode rods of 1 or 2 mm diam produce on-axis doses at 1 m of 16 rad(Si) or 20 rad(Si), respectively. The on-axis source diameter based on the full width at half-maximum (FWHM) of the line-spread function (LSF) is 0.9±0.1 mm for a 1 mm diam rod and 1.4±0.1 mm for a 2 mm diam rod, independent of voltage. The LANL source diameter, determined from the modulation transfer function of the LSF, is nearly twice the FWHM. The measured rod-pinch current is reproduced with a diode model that includes ions and accounts for anode and cathode plasma expansion

  15. Transient thermal analysis of semiconductor diode lasers under pulsed operation

    Science.gov (United States)

    Veerabathran, G. K.; Sprengel, S.; Karl, S.; Andrejew, A.; Schmeiduch, H.; Amann, M.-C.

    2017-02-01

    Self-heating in semiconductor lasers is often assumed negligible during pulsed operation, provided the pulses are `short'. However, there is no consensus on the upper limit of pulse width for a given device to avoid-self heating. In this paper, we present an experimental and theoretical analysis of the effect of pulse width on laser characteristics. First, a measurement method is introduced to study thermal transients of edge-emitting lasers during pulsed operation. This method can also be applied to lasers that do not operate in continuous-wave mode. Secondly, an analytical thermal model is presented which is used to fit the experimental data to extract important parameters for thermal analysis. Although commercial numerical tools are available for such transient analyses, this model is more suitable for parameter extraction due to its analytical nature. Thirdly, to validate this approach, it was used to study a GaSb-based inter-band laser and an InP-based quantum cascade laser (QCL). The maximum pulse-width for less than 5% error in the measured threshold currents was determined to be 200 and 25 ns for the GaSb-based laser and QCL, respectively.

  16. Stable CW Single Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

    Science.gov (United States)

    Duerksen, Gary L.; Krainak, Michael A.

    1999-01-01

    Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by tWo methods: 1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element'; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback'. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback.

  17. Characteristics of magnetically insulated diode in a multi-shot operation

    Energy Technology Data Exchange (ETDEWEB)

    Chishiro, E; Masugata, K; Yatsui, K [Nagaoka Univ. of Technology (Japan). Laboratory of Beam Technology

    1997-12-31

    The beam characteristics in a multi-shot operation were evaluated. The MID utilized in the experiment is a racetrack type diode, where flat anode and cathode electrodes are utilized. On the anode, a polyethylene sheet of 1 mm thickness is attached as an ion source. The MID is successively operated without breaking the vacuum. An ion current density (J{sub i}) of 350 A/cm{sup 2} is observed at the first shot when the diode gap is 5 mm. The value decreases with increasing number of shots and at the 7th shot, J{sub i} is less than 150 A/cm{sup 2}. After 7 shots, the anode surface is inspected and found to be covered with stuck matter of metallic materials such as Zn, Al, Fe, Cu. These materials seem to be produced by the ablation of the MID electrode. By eliminating the stuck matter from the surface, J{sub i} is recovered to the initial value. The decrease in J{sub i} is due to the fact that the anode is covered with the stuck matter, which prevents the growth of anode plasma. (author). 6 figs., 8 refs.

  18. Emission properties of diode laser bars during pulsed high-power operation

    International Nuclear Information System (INIS)

    Hempel, Martin; Tomm, Jens W; Elsaesser, Thomas; Hennig, Petra

    2011-01-01

    High-power diode laser bars (cm-bars) are subjected to single pulse step tests carried out up to and beyond their ultimate limits of operation. Laser nearfields and thermal behaviour are monitored for pulse widths in the 10–100 µs range with streak- and thermo-cameras, respectively. Thresholds of catastrophic optical damage are determined, and their dependence on the length of the injected current pulses is explained qualitatively. This approach permits testing the hardness of facet coatings of cm-bars with or without consideration of accidental single pre-damaged emitter failure effects and thermal crosstalk between the emitters. This allows for the optimization of pulsed operation parameters, helps limiting sudden degradation and provides insight into the mechanisms governing the device emission behaviour at ultimate output powers. (fast track communication)

  19. Stable CW Single-Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

    Science.gov (United States)

    Duerksen, Gary L.; Krainak, Michael A.

    1999-01-01

    Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by two methods: 1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element'; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback. We coupled a nominal 935 run-wavelength Fabry-Perot laser diode to an ultra narrow band (18 pm) FBG. When tuned by varying its temperature, the laser wavelength is pulled toward the centerline of the Bragg grating, and the spectrum of the laser output is seen to fall into three discrete stability regimes as measured by the side-mode suppression ratio.

  20. Characterization and investigation of the anomalous behavior of the immersed-Bz diode during operation at 4 to 5 MV

    International Nuclear Information System (INIS)

    Rovang, D. C.; Bruner, N.; Johnston, M. D.; Madrid, E. A.; Maenchen, J. E.; Oliver, B. V.; Portillo, S.; Welch, D. R.

    2008-01-01

    The immersed-B z diode is being developed as a high-brightness, flash x-ray radiography source at Sandia National Laboratories. This diode is a foil-less electron-beam diode with a long, thin, needlelike cathode which is inserted into the bore of a solenoid. The solenoidal magnetic field guides the electron beam emitted from the cathode to the anode while maintaining a small beam radius. The electron beam strikes a thin, high-atomic-number anode and produces forward-directed bremsstrahlung. In addition, electron beam heating of the anode produces surface plasmas allowing ion emission. Two different operating regimes for this diode have been identified: A nominal operating regime where the total diode current is characterized as classically bipolar with stable impedance [see D. C. Rovang et al., Phys. Plasmas 14, 113107 (2007)] and an anomalous operating regime characterized by a rapid impedance collapse where the total diode current greatly exceeds the bipolar limit. The operating regimes are approximately separated by cathode diameters greater than 3 mm for the nominal regime and less than 3 mm for the anomalous impedance collapse regime. Results from a comprehensive series of experiments conducted at 4-5 MV characterizing the transition from this nominal operating regime to the anomalous operating regime as the cathode diameter is reduced are presented. Results from experiments investigating the effects of anode-cathode gap, anode material, and cryogenic modification of the anode surface are also presented. Although these investigations were unsuccessful in completely mitigating the anomalous behavior, insight gained from these experiments has elucidated several key physics issues that are discussed.

  1. Narrow line width operation of a 980 nm gain guided tapered diode laser bar

    DEFF Research Database (Denmark)

    Vijayakumar, Deepak; Jensen, Ole Bjarlin; Barrientos-Barria, Jessica

    2011-01-01

    We demonstrate two different schemes for the spectral narrowing of a 12 emitter 980 nm gain guided tapered diode laser bar. In the first scheme, a reflective grating has been used in a Littman Metcalf configuration and the wavelength of the laser emission could be narrowed down from more than 5.......5 nm in the free running mode to 0.04 nm (FWHM) at an operating current of 30 A with an output power of 8 W. The spectrum was found to be tunable within a range of 16 nm. In the second scheme, a volume Bragg grating has been used to narrow the wavelength of the laser bar from over 5 nm to less than 0.......2 nm with an output of 5 W at 20 A. To our knowledge, this is the first time spectral narrowing has been performed on a gain guided tapered diode laser bar. In the Littman Metcalf configuration, the spectral brightness has been increased by 86 times and in the volume Bragg grating cavity the spectral...

  2. Operation of passive wax flashover and LiF ion sources on extraction applied-B ion diodes on SABRE

    International Nuclear Information System (INIS)

    Cuneo, M.E.; Hanson, D.L.; Smith, J.R.; Rosenthal, S.E.; Coats, R.S.; Bernard, M.A.

    1993-01-01

    The authors are fielding wax flashover and LiF anodes on an extraction ion diode on SABRE (Sandia Accelerator and Beam Research Experiment), a magnetically insulated linear induction voltage adder, presently providing a 6 MV, 300 kA output. These anodes are passive sources of principally hydrocarbon and lithium beams. In applied-B ion diodes, passive ion sources use the applied voltage to produce the required ions either through an electron assisted desorption and surface flashover process, and/or through field emission mechanisms. Passive sources therefore require power delivered to the diode before ions will be turned-on. Passive sources provide a simple way to generate ions to test accelerator performance, accelerator to diode coupling, diagnostics, and to study sources of divergence and divergence reduction techniques. The authors will discuss the effect of magnetic field geometry and the important role of cathode feed electrons in the formation and evolution of the A-K gap electron sheath in the diode. Experimental data on diode operation and beam production will be compared to the predictions of PIC code simulations

  3. Diode laser operating on an atomic transition limited by an isotope ⁸⁷Rb Faraday filter at 780 nm.

    Science.gov (United States)

    Tao, Zhiming; Hong, Yelong; Luo, Bin; Chen, Jingbiao; Guo, Hong

    2015-09-15

    We demonstrate an extended cavity Faraday laser system using an antireflection-coated laser diode as the gain medium and the isotope (87)Rb Faraday anomalous dispersion optical filter (FADOF) as the frequency selective device. Using this method, the laser wavelength works stably at the highest transmission peak of the isotope (87)Rb FADOF over the laser diode current from 55 to 140 mA and the temperature from 15°C to 35°C. Neither the current nor the temperature of the laser diode has significant influence on the output frequency. Compared with previous extended cavity laser systems operating at frequencies irrelevant to spectacular atomic transition lines, the laser system realized here provides a stable laser source with the frequency operating on atomic transitions for many practical applications.

  4. Interference of Single Photons Emitted by Entangled Atoms in Free Space

    Science.gov (United States)

    Araneda, G.; Higginbottom, D. B.; Slodička, L.; Colombe, Y.; Blatt, R.

    2018-05-01

    The generation and manipulation of entanglement between isolated particles has precipitated rapid progress in quantum information processing. Entanglement is also known to play an essential role in the optical properties of atomic ensembles, but fundamental effects in the controlled emission and absorption from small, well-defined numbers of entangled emitters in free space have remained unobserved. Here we present the control of the emission rate of a single photon from a pair of distant, entangled atoms into a free-space optical mode. Changing the length of the optical path connecting the atoms modulates the single-photon emission rate in the selected mode with a visibility V =0.27 ±0.03 determined by the degree of entanglement shared between the atoms, corresponding directly to the concurrence Cρ=0.31 ±0.10 of the prepared state. This scheme, together with population measurements, provides a fully optical determination of the amount of entanglement. Furthermore, large sensitivity of the interference phase evolution points to applications of the presented scheme in high-precision gradient sensing.

  5. Tapered fiber coupling of single photons emitted by a deterministically positioned single nitrogen vacancy center

    Energy Technology Data Exchange (ETDEWEB)

    Liebermeister, Lars, E-mail: lars.liebermeister@physik.uni-muenchen.de; Petersen, Fabian; Münchow, Asmus v.; Burchardt, Daniel; Hermelbracht, Juliane; Tashima, Toshiyuki [Fakultät für Physik, Ludwig-Maximilians-Universität München, 80799 München (Germany); Schell, Andreas W.; Benson, Oliver [Institut für Physik, Humboldt-Universität zu Berlin, 12489 Berlin (Germany); Meinhardt, Thomas; Krueger, Anke [Institut für Organische Chemie, Universität Würzburg, 97074 Würzburg (Germany); Wilhelm Conrad Roentgen Research Center for Complex Materials Systems, Universität Würzburg, 97074 Würzburg (Germany); Stiebeiner, Ariane; Rauschenbeutel, Arno [Atominstitut, Technische Universität Wien, 1020 Wien (Austria); Weinfurter, Harald; Weber, Markus, E-mail: markusweber@lmu.de [Fakultät für Physik, Ludwig-Maximilians-Universität München, 80799 München (Germany); Max-Planck-Institut für Quantenoptik, 85748 Garching (Germany)

    2014-01-20

    A diamond nano-crystal hosting a single nitrogen vacancy (NV) center is optically selected with a confocal scanning microscope and positioned deterministically onto the subwavelength-diameter waist of a tapered optical fiber (TOF) with the help of an atomic force microscope. Based on this nano-manipulation technique, we experimentally demonstrate the evanescent coupling of single fluorescence photons emitted by a single NV-center to the guided mode of the TOF. By comparing photon count rates of the fiber-guided and the free-space modes and with the help of numerical finite-difference time domain simulations, we determine a lower and upper bound for the coupling efficiency of (9.5 ± 0.6)% and (10.4 ± 0.7)%, respectively. Our results are a promising starting point for future integration of single photon sources into photonic quantum networks and applications in quantum information science.

  6. Pulsed operation of high-power light emitting diodes for imaging flow velocimetry

    International Nuclear Information System (INIS)

    Willert, C; Klinner, J; Moessner, S; Stasicki, B

    2010-01-01

    High-powered light emitting diodes (LED) are investigated for possible uses as light sources in flow diagnostics, in particular, as an alternative to laser-based illumination in particle imaging flow velocimetry in side-scatter imaging arrangements. Recent developments in solid state illumination resulted in mass-produced LEDs that provide average radiant power in excess of 10 W. By operating these LEDs with short duration, pulsed currents that are considerably beyond their continuous current damage threshold, light pulses can be generated that are sufficient to illuminate and image micron-sized particles in flow velocimetry. Time-resolved PIV measurements in water at a framing rate of 2kHz are presented. The feasibility of LED-based PIV measurements in air is also demonstrated

  7. Efficient continuous-wave 1112 nm Nd:YAG laser operation under direct diode pumping at 885 nm

    International Nuclear Information System (INIS)

    Gao, J; Dai, X J; Zhang, L; Wu, X D

    2013-01-01

    We report compact diode-end-pumped continuous-wave laser operation at 1112 nm under 885 nm diode-direct pumping for the first time. On the basis of the R 2 →Y 6 transition in a conventional Nd:YAG (yttrium aluminum garnet) single crystal, the maximum output power of 12.5 W is achieved, with an optical to optical efficiency of 46.6% and a slope efficiency of 52.9%. To the best of our knowledge, this represents the highest output at 1112 nm generated by a diode-end-pumped Nd:YAG laser. Furthermore, it is the highest optical to optical efficiency ever reported for 1112 nm Nd:YAG lasers. The short term power stability is ∼0.32% at 12.0 W output. (letter)

  8. Operation of a high-purity silicon diode alpha particle detector at 1.4 K

    International Nuclear Information System (INIS)

    Martoff, C.J.; Kaczanowicz, E.; Neuhauser, B.J.; Lopez, E.; Zhang, Y.; Ziemba, F.P.

    1991-01-01

    Detection of alpha particles at temperatures as low as 1.4 K was demonstrated using a specially fabricated Si diode. The diode was 475 mm 2 by 0.280 mm thick, fabricated from high-purity silicon with degenerately doped contacts. This is an important step toward development of dual-mode (ionization plus phonon) silicon detectors for low energy radiation. (orig.)

  9. Diode-pumped efficient laser operation and spectroscopy of Tm,Ho:YVO 4

    Science.gov (United States)

    Li, G.; Yao, B. Q.; Meng, P. B.; Duan, X. M.; Ju, Y. L.; Wang, Y. Z.

    2011-04-01

    Spectroscopic characterization of co-doped Tm,Ho:YVO 4 crystal grown by the Czochralski method has been performed including absorption spectrum, emitting spectrum and luminescence decay lifetime. The polarization emitting spectrum around 2 μm is accomplished by exciting a singly Ho 3+ doped YVO 4 crystal to exclude the influence of Tm 3+3F 4- 3H 6 transition and the emission cross section is deduced from both Fuchtbauer-Ladenburg (F-L) equation and reciprocity method (RM). In addition, we report up to 10.4 W continuous wave (CW) output with a conversion efficiency of 40% and 10.3 W Q-Switch output with 12.5 kHz pulse repetition rate of diode-pumped cryogenic Tm,Ho:YVO 4 laser. For Q-Switch operation, the minimum pulse width of 28.2 ns is obtained, all of which demonstrate that the Tm,Ho:YVO 4 is excellent laser material for 2 μm radiation.

  10. Continuous-Wave Operation of GaN Based Multi-Quantum-Well Laser Diode at Room Temperature

    International Nuclear Information System (INIS)

    Li-Qun, Zhang; Shu-Ming, Zhang; Hui, Yang; Lian, Ji; Jian-Jun, Zhu; Zong-Shun, Liu; De-Gang, Zhao; De-Sheng, Jiang; Li-Hong, Duan; Hai, Wang; Yong-Sheng, Shi; Su-Ying, Liu; Jun-Wu, Liang; Qing, Cao; Liang-Hui, Chen

    2008-01-01

    Room-temperature operation of cw GaN based multi-quantum-well laser diodes (LDs) is demonstrated. The LD structure is grown on a sapphire (0001) substrate by metalorganic chemical vapour deposition. A 2.5μm × 800μm ridge waveguide structure is fabricated. The electrical and optical characteristics of the laser diode under direct current injection at room temperature are investigated. The threshold current and voltage of the LD under cw operation are 110 mA and 10.5 V, respectively. Thermal induced series resistance decrease and emission wavelength red-shift are observed as the injection current is increased. The full width at half maximum for the parallel and perpendicular far field pattern (FFP) are 12° and 32°, respectively

  11. Operation of a high-purity silicon diode alpha particle detector at 1. 4 K

    Energy Technology Data Exchange (ETDEWEB)

    Martoff, C.J.; Kaczanowicz, E. (Temple Univ., Philadelphia, PA (USA)); Neuhauser, B.J.; Lopez, E.; Zhang, Y. (San Francisco State Univ., CA (USA)); Ziemba, F.P. (Quantrad Corp. (USA))

    1991-03-01

    Detection of alpha particles at temperatures as low as 1.4 K was demonstrated using a specially fabricated Si diode. The diode was 475 mm{sup 2} by 0.280 mm thick, fabricated from high-purity silicon with degenerately doped contacts. This is an important step toward development of dual-mode (ionization plus phonon) silicon detectors for low energy radiation. (orig.).

  12. Continuous-wave dual-wavelength operation of a distributed feedback laser diode with an external cavity using a volume Bragg grating

    Science.gov (United States)

    Zheng, Yujin; Sekine, Takashi; Kurita, Takashi; Kato, Yoshinori; Kawashima, Toshiyuki

    2018-03-01

    We demonstrate continuous-wave dual-wavelength operation of a broad-area distributed feedback (DFB) laser diode with a single external-cavity configuration. This high-power DFB laser has a narrow bandwidth (current and temperature ranges.

  13. Long pulse diode experiments

    Science.gov (United States)

    McClenahan, Charles R.; Weber, Gerald J.; Omalley, Martin W.; Stewart, Joseph; Rinehart, Larry F.; Buttram, Malcolm T.

    1990-10-01

    A diode employing a thermionic cathode has produced 80 A beams at 200 kV for at least 6 microseconds. Moreover, the diode operates at rates as high as 1 Hz. EGUN simulations of the experimental geometry agree with the experiments. Finally, simulation of a proposed diode geometry predicts a 1 kA, 500 kV beam.

  14. Degradation mechanism of AlInGaP light emitting diodes during PMMA encapsulation and operation

    Energy Technology Data Exchange (ETDEWEB)

    Preuss, S.

    2007-11-15

    In this thesis we investigate the degradation mechanism of AlInGaP light emitting diodes (LEDs) during encapsulation and operation. The AlInGaP LEDs are encapsulated using an injection moulding tool. The molded part acts as physical housing as well as tailors the radiation pattern. Thus a narrow light beam with a spread angle of {alpha}=10 has been observed. The LED temperature has been measured by the voltage variation of the LED which is caused by the temperature change at a constant current. Thus the thermal load of the LED chips during the encapsulation process is investigated. To verify the temperature measurement a simulation based on the finite element method has been carried out. The experimental and theoretical data are in good agreement. The LED properties are investigated before and after the encapsulation. The results are compared and we found a reduction of the serial resistance and an enhanced luminous efficiency. The peak emission energy remained constant, but a peak broadening of {delta}E=9meV has been observed. A slight polarisation of the emitted light is an indication for a polarization effect of the polymethylmethacrylat (PMMA) housing. Accelerated degradation experiments using high forward currents are performed to estimate the lifetime of the PMMA encapsulated LEDs. A diffusion model is presented to explain the decay in luminous flux versus degradation time and degradation current. We believe that the reduction of quantum efficiency is caused by p-type dopant diffusion into the active layer where it acts as a non-radiative recombination centre. Using this model we determine the lifetime under the recommended drive current of I=20mA. The resulting lifetime is t=1.5.10{sup 6}h using a reduction of 50% in the luminous flux as failure criteria. (orig.)

  15. Coaxial foilless diode

    OpenAIRE

    Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

    2014-01-01

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

  16. Operation voltage behavior of organic light emitting diodes with polymeric buffer layers doped by weak electron acceptor

    Energy Technology Data Exchange (ETDEWEB)

    Jeon, Hyeon Soo; Cho, Sang Hee [Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Seo, Jaewon; Park, Yongsup [Department of Physics, Kyung Hee University, Seoul 130-701 (Korea, Republic of); Suh, Min Chul, E-mail: mcsuh@khu.ac.kr [Department of Information Display and Advanced Display Research Center, Kyung Hee University, Seoul 130-701 (Korea, Republic of)

    2013-11-01

    We present polymeric buffer materials based on poly[2,7-(9,9-dioctyl-fluorene)-co-(1,4-phenylene -((4-sec-butylphenyl)imino)-1,4-phenylene)] (TFB) for highly efficient solution processed organic light emitting diodes (OLEDs). Doped TFB with 9,10-dicyanoanthracene, a weak electron acceptor results in significant improvement of current flow and driving voltage. Maximum current- and power-efficiency value of 12.6 cd/A and 18.1 lm/W are demonstrated from phosphorescent red OLEDs with this doped polymeric anode buffer system. - Highlights: • Polymeric buffer materials for organic light emitting diodes (OLEDs). • Method to control hole conductivity of polymeric buffer layer in OLED device. • Enhanced current density of buffer layers upon 9,10-dicyanoanthracene (DCA) doping. • Comparison of OLED devices having polymeric buffer layer with or without DCA. • Effect on operating voltage by doping DCA in the buffer layer.

  17. Narrow linewidth operation of a spectral beam combined diode laser bar.

    Science.gov (United States)

    Zhu, Zhanda; Jiang, Menghua; Cheng, Siqi; Hui, Yongling; Lei, Hong; Li, Qiang

    2016-04-20

    Our experiment is expected to provide an approach for realizing ultranarrow linewidth for a spectral beam combined diode laser bar. The beams of a diode laser bar are combined in a fast axis after a beam transformation system. With the help of relay optics and a transform lens with a long focal length of 1.5 m, the whole wavelength of a spectral combined laser bar can be narrowed down to 0.48 nm from more than 10 nm. We have achieved 56.7 W cw from a 19-element single bar with an M2 of 1.4  (in horizontal direction)×11.6  (in vertical direction). These parameters are good evidence that all the beams from the diode laser bar are combined together to increase the brightness.

  18. Operation of resonant-tunneling diodes with strong back injection from the collector at frequencies up to 1.46 THz

    International Nuclear Information System (INIS)

    Feiginov, Michael; Kanaya, Hidetoshi; Suzuki, Safumi; Asada, Masahiro

    2014-01-01

    In search for possibilities to increase the operating frequencies of resonant-tunneling diodes (RTDs), we are studying RTDs working in an unusual regime. The collector side of our diodes is so heavily doped that the collector depletion region is fully eliminated in our RTDs and the ground quantum-well subband stays immersed under (or stays close to) the collector quasi-Fermi level. The electron injection from the collector into the RTD quantum well is very strong in our diodes and stays comparable to that from the emitter in the whole range of RTD operating biases. Our RTDs exhibit well pronounced negative-differential-conductance region and peak-to-valley current ratio around 1.8. We demonstrate operation of our diodes in RTD oscillators up to 1.46 THz. We also observe a fine structure in the emission spectra of our RTD oscillators, when they are working in the regime close to the onset of oscillations.

  19. Influence of generator structure on pinch reflex diode operation for light ion production

    International Nuclear Information System (INIS)

    Bernard, A.; Bourgeois, C.; Camarcat, N.; Tournier, B.

    1983-01-01

    Light ion beams with characteristics 1 MV, 185 kA, 100 ns FWHM have been accelerated in a pinch-reflex diode driven by the SIDONIX II generator pulsed in positive polarity. The diode impedance of 2 ohms remains higher than the water line impedance of 1.3 ohms, and consequently, the ion efficiency is limited to 25%. This effect is attributed to the slow current rise time and fast anode plasma expansion since the machine does not have an intermediate store to reduce the 100 ns FWHM power pulse. Published data on Hydra, Reiden IV, Gamble II A support this hypothesis. Preliminary results of focusing experiments, when the beam is injected into a 1 Torr air cell downstream the cathode, indicate that 60 kA end up on a 3 cm diameter target. These results should be improved by adding an intermediate store to the generator, giving a 1.3 TW, 45 ns FWHM power pulse for 180 kJ of stored energy in the Marx. We expect that the increase in diode electrical power will lead to an increase in total ion current. For GAMBLE II A, 500 kA of light ion are extracted when the diode power reaches 1.4 TW, for equivalent Marx energies

  20. Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 GHz.

    Science.gov (United States)

    Zhang, Jiawei; Li, Yunpeng; Zhang, Binglei; Wang, Hanbin; Xin, Qian; Song, Aimin

    2015-07-03

    Mechanically flexible mobile phones have been long anticipated due to the rapid development of thin-film electronics in the last couple of decades. However, to date, no such phone has been developed, largely due to a lack of flexible electronic components that are fast enough for the required wireless communications, in particular the speed-demanding front-end rectifiers. Here Schottky diodes based on amorphous indium-gallium-zinc-oxide (IGZO) are fabricated on flexible plastic substrates. Using suitable radio-frequency mesa structures, a range of IGZO thicknesses and diode sizes have been studied. The results have revealed an unexpected dependence of the diode speed on the IGZO thickness. The findings enable the best optimized flexible diodes to reach 6.3 GHz at zero bias, which is beyond the critical benchmark speed of 2.45 GHz to satisfy the principal frequency bands of smart phones such as those for cellular communication, Bluetooth, Wi-Fi and global satellite positioning.

  1. Simple model for the description of a thermionic Cs diode in operation

    International Nuclear Information System (INIS)

    Tschersich, K.G.

    1975-01-01

    Because of the small voltage loss in the space between the electrodes, Cs is the most common work medium in thermionic diodes. With the model calculations of the processes in the space between the electrodes, the author aims to explain the formation of Cs ions and the current transport through the electrode gap at these low voltages. (RW/AK) [de

  2. CW and femtosecond operation of a diode-pumped Yb:BaY(2)F(8) laser.

    Science.gov (United States)

    Galzerano, G; Coluccelli, N; Gatti, D; Di Lieto, A; Tonelli, M; Laporta, P

    2010-03-15

    We report for the first time on laser action of a diode-pumped Yb:BaY(2)F(8) crystal. Both CW and femtosecond operations have been demonstrated at room-temperature conditions. A maximum output power of 0.56 W, a slope efficiency of 34%, and a tunability range from 1013 to 1067 nm have been obtained in CW regime. Transform-limited pulse trains with a minimum duration of 275 fs, an average power of 40 mW, and a repetition rate of 83 MHz have been achieved in a passive mode-locked regime using a semiconductor saturable absorber mirror.

  3. Novel packaging for CW and QCW diode laser modules for operation with high power and duty cycles

    Science.gov (United States)

    Fassbender, Wilhelm; Lotz, Jens; Kissel, Heiko; Biesenbach, Jens

    2018-02-01

    Continuous wave (CW) and quasi-continuous wave (QCW) operated diode laser bars and arrays have found a wide range of industrial, medical, scientific, military and space applications with a broad variety in wavelength, pulse energy, pulse duration and beam quality. Recent applications require even higher power, duty cycles and power density. The heat loss will be dissipated by conductive cooling or liquid cooling close to the bars. We present the latest performance and reliability data of two novel high-brightness CW and QCW arrays of customized and mass-production modules, in compact and robust industry design for operation with high power and high duty cycles. All designs are based on single diode packages consisting of 10mm laser bars, soft or hard soldered between expansion matched submounts. The modular components cover a wide span of designs which differ basically in water/conduction (active/passive) cooled, single, linear (horizontal and vertical) arranged designs, as well as housed and unhoused modules. The different assembling technologies of active and passive cooled base plates affect the heat dissipation and therefore the reachable power at different QCW operating conditions, as well as the lifetime. As an example, a package consisting of 8 laser diodes, connected to a 28.8*13.5*7.0mm3 DCB (direct copper bonded) submount, passively or actively cooled is considered. This design is of particular interest for mobile applications seamless module to module building system, with an infinite number of laser bars at 1.7mm pitch. Using 940nm bars we can reach an optical output power per bar of 450W at 25°C base plate temperature with 10Hz, 1.2% duty cycle and 1.2ms pulse duration. As an additional example, micro channel coolers can be vertically stacked up to 50 diodes with a 1,15mm pitch. This design is suitable for all applications, demanding also compactness and light weight and high power density. Using near infrared bars and others, we can reach an optical

  4. Investigation of a diode-pumped intracavity optical parametric oscillator in pulsed and continuous wave operation

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Skettrup, Torben; Balle-Petersen, O.

    2001-01-01

    Summary form only given. CW and pulsed compact tunable laser sources in the infrared have widespread scientific, medical and industrial applications. Such a laser source can be obtained by use of a diode-pumped intracavity optical parametric oscillator (IOPO). We report on a IOPO based on a Yb......:YAG laser incorporating a periodically poled LiNbO3 (PPLN) crystal inside the laser cavity to take advantage of the high circulating intracavity field. The Yb:YAG crystal is pumped by a reliable 940 nm fibre-coupled diode laser. The IOPO consists of a Yb:YAG crystal coated for HR at 1030 nm, an intracavity...... lens to generate a beam waist in the PPLN crystal, a dichroic mirror to separate the laser and signal fields and two end mirrors...

  5. High power diode-pumped continuous wave and Q-switch operation of Tm,Ho:YVO4 laser

    International Nuclear Information System (INIS)

    Yao, B Q; Li, G; Meng, P B; Zhu, G L; Ju, Y L; Wang, Y Z

    2010-01-01

    High power diode-pumped continuous wave (CW) and Q-switch operation of Tm,Ho:YVO 4 laser is reported. Using two Tm,Ho:YVO 4 rods in a single cavity, up to 20.2 W of CW output lasing at 2054.7 nm was obtained under cryogenic temperature of 77 K with an optical to optical conversion efficiency of 32.9%. For Q-switch operation, up to 19.4 W of output was obtained under 15 kHz pulse repetition frequency (PRF) with a minimum pulse width of 24.2 ns. In addition, different pulse repetition frequencies of Q-switch operation with 10.0 kHz, 12.5 kHz and 15.0 kHz were investigated comparatively

  6. Single Spatial-Mode Room-Temperature-Operated 3.0 to 3.4 micrometer Diode Lasers

    Science.gov (United States)

    Frez, Clifford F.; Soibel, Alexander; Belenky, Gregory; Shterengas, Leon; Kipshidze, Gela

    2010-01-01

    Compact, highly efficient, 3.0 to 3.4 m light emitters are in demand for spectroscopic analysis and identification of chemical substances (including methane and formaldehyde), infrared countermeasures technologies, and development of advanced infrared scene projectors. The need for these light emitters can be currently addressed either by bulky solid-state light emitters with limited power conversion efficiency, or cooled Interband Cascade (IC) semiconductor lasers. Researchers here have developed a breakthrough approach to fabrication of diode mid-IR lasers that have several advantages over IC lasers used for the Mars 2009 mission. This breakthrough is due to a novel design utilizing the strain-engineered quantum-well (QW) active region and quinternary barriers, and due to optimization of device material composition and growth conditions (growth temperatures and rates). However, in their present form, these GaSb-based laser diodes cannot be directly used as a part of sensor systems. The device spectrum is too broad to perform spectroscopic analysis of gas species, and operating currents and voltages are too high. In the current work, the emitters were fabricated as narrow-ridge waveguide index-guided lasers rather than broad stripe-gain guided multimode Fabry-Perot (FP) lasers as was done previously. These narrow-ridge waveguide mid-IR lasers exhibit much lower power consumptions, and can operate in a single spatial mode that is necessary for demonstration of single-mode distributed feedback (DBF) devices for spectroscopic applications. These lasers will enable a new generation of compact, tunable diode laser spectrometers with lower power consumption, reduced complexity, and significantly reduced development costs. These lasers can be used for the detection of HCN, C2H2, methane, and ethane.

  7. Operation of an extraction, applied-B diode using an externally-driven, metallic foil anode plasma source

    International Nuclear Information System (INIS)

    Hinshelwood, D.D.; Fisher, R.C.; Greenly, J.B.; Neri, J.M.; Oliver, B.V.; Ottinger, P.F.; Rose, D.V.; Stephanakis, S.J.; Young, F.C.

    1995-01-01

    The authors are developing an extraction, applied-B ion diode, on the Gamble II generator at NRL, for ion-beam-transport research in support of the SNL light-ion ICF program. An ion beam with a voltage above 1 MV and a proton current of 150--200 kA is required for transport experiments. At present they are using hardware which allows a maximum anode area of ∼60 cm 2 . These parameters result in enhancement factors 2--3 times greater than those in similar experiments at Cornell, SNL, and KfK. In addition, the early, high-impedance phase of the diode must be minimized to prevent insulator flashover. Transport experiments with beam focusing also preclude ion beam angular momentum. A version of the EMFAP source, developed at Cornell and improved at KfK, is used to provide prompt turn-on of the ion current. To date the authors have obtained ion beams with rapid turn-on, high currents and current densities, high ion efficiencies (80%), relatively stable impedance behavior, and negligible angular momentum. Unfortunately, these have not all been obtained on the same shot. Electron loss current flowing through the anode foil is seen to play an important role in evolution of the anode plasma. Under the conditions of this experiment, the diode self-magnetic field is also important. Work at present centers on viewing the existing data in light of the refined field measurements, coupled with PIC modeling, to identify an operating regime that will provide the required electrical behavior without beam angular momentum

  8. Experimental investigation on a diode-pumped cesium-vapor laser stably operated at continuous-wave and pulse regime.

    Science.gov (United States)

    Chen, Fei; Xu, Dongdong; Gao, Fei; Zheng, Changbin; Zhang, Kuo; He, Yang; Wang, Chunrui; Guo, Jin

    2015-05-04

    Employing a fiber-coupled diode-laser with a center wavelength of 852.25 nm and a line width of 0.17 nm, experimental investigation on diode-end-pumped cesium (Cs) vapor laser stably operated at continuous-wave (CW) and pulse regime is carried out. A 5 mm long cesium vapor cell filled with 60 kPa helium and 20 kPa ethane is used as laser medium. Using an output coupler with reflectivity of 48.79%, 1.26 W 894.57 nm CW laser is obtained at an incident pump power of 4.76 W, corresponding an optical-optical efficiency of 26.8% and a slope-efficiency of 28.8%, respectively. The threshold temperature is 67.5 °C. Stable pulsed cesium laser with a maximum average output power of 2.6 W is obtained at a repetition rate of 76 Hz, and the pulse repetition rate can be extend to 1 kHz with a pulse width of 18 μs.

  9. Experimental studies for improvement of thermal effects in a high-power fiber-coupled diode laser module operating at 808 nm

    Science.gov (United States)

    El-Sherif, Ashraf F.; Hussein, Khalid; Hassan, Mahmoud F.; Talat, Mahmoud M.

    2012-03-01

    High power diode laser module operating at 808 nm is required for different applications, such as developing an efficient high power Nd3+-doped solid state laser and Tm3+ -doped silica fiber laser, industrial, medical and military applications. Optical and thermal images characterization for a fiber-coupled high power diode laser module is presented experimentally for 6.6 Watt output optical power .An external temperature controller system was designed, which stabilizes the central wavelength at 808 nm at 25°C over a wide range of diode laser driving current from 1A to 6 A. without this cooling system, the wavelength changes by 0.35nm/°C for temperature changes from 20°C to 40°C at the same range of the driving current. In this paper we have present a methodology for temperature reduction of a 808 nm high power diode laser module, based on dynamically thermal control, which is known as dynamic thermal management. Stabilization of the output wavelength has been done by using proportional speed control (PSC) of a CPU cooling fan with certain scheme of straight fins heat sink. Two electronic circuits based on pulse width modulation (PWM) in microcontroller and comparators IC have been used. This technique can be considered as an effective mechanism for reducing temperature and power dissipation to make stabilization of the diode laser output wavelength by preventing heat accumulation from the thermo electric cooling (TEC) inside the diode laser module confirmed by thermal images.

  10. First results from the LHC Schottky Monitor operated with Direct Diode Detection

    CERN Document Server

    Gasior, M

    2012-01-01

    The LHC is equipped with a Schottky diagnostic system based on 4.8 GHz resonant pick-ups. Their signals are processed according to a three-stage down-mixing scheme, working well in most beam conditions. An important exception is the period of energy ramp of proton beams, when the noise floor of the observed beam spectrum increases dramatically and the Schottky sidebands disappear. To study beam spectra in such conditions the signals from the Schottky pick-ups were split and the second half of their power was processed with a copy of the LHC tune measurement electronics, modified for this application. The experimental set-up is based on simple diode detectors followed by signal processing in the kHz range and 24-bit audio ADCs. With such a test system LHC beam spectra were successfully observed. This contribution presents the used hardware and obtained results.

  11. High polarization purity operation of 99% in 9xx-nm broad stripe laser diodes

    Science.gov (United States)

    Morohashi, Rintaro; Yamagata, Yuji; Kaifuchi, Yoshikazu; Tada, Katsuhisa; Nogawa, Ryozaburo; Yamada, Yumi; Yamaguchi, Masayuki

    2018-02-01

    Polarization characteristics of self-aligned stripe (SAS) laser diodes (LDs) and Ridge-LDs are investigated to realize highly efficient polarization beam combined (PBC) LD modules. Vertical layers of both lasers are designed identically. Near field patterns (NFP) of TM polarization for the Ridge-LD showed peaks at the side edges, as expected by the strain simulation. On the other hand, SAS-LD showed a relatively flat and weak profile. Polarization purity (ITE/ (ITE+ITM)) of SAS-LDs exceeds 99%, while those of the Ridge-LDs are as low as 96%. It is confirmed that our SAS-LDs are suitable sources for PBC with low power loss.

  12. Highly-reliable operation of 638-nm broad stripe laser diode with high wall-plug efficiency for display applications

    Science.gov (United States)

    Yagi, Tetsuya; Shimada, Naoyuki; Nishida, Takehiro; Mitsuyama, Hiroshi; Miyashita, Motoharu

    2013-03-01

    Laser based displays, as pico to cinema laser projectors have gathered much attention because of wide gamut, low power consumption, and so on. Laser light sources for the displays are operated mainly in CW, and heat management is one of the big issues. Therefore, highly efficient operation is necessitated. Also the light sources for the displays are requested to be highly reliable. 638 nm broad stripe laser diode (LD) was newly developed for high efficiency and highly reliable operation. An AlGaInP/GaAs red LD suffers from low wall plug efficiency (WPE) due to electron overflow from an active layer to a p-cladding layer. Large optical confinement factor (Γ) design with AlInP cladding layers is adopted to improve the WPE. The design has a disadvantage for reliable operation because the large Γ causes high optical density and brings a catastrophic optical degradation (COD) at a front facet. To overcome the disadvantage, a window-mirror structure is also adopted in the LD. The LD shows WPE of 35% at 25°C, highest record in the world, and highly stable operation at 35°C, 550 mW up to 8,000 hours without any catastrophic optical degradation.

  13. Two-wavelength, passive self-injection-controlled operation of diode-pumped cw Yb-doped crystal lasers.

    Science.gov (United States)

    Louyer, Yann; Wallerand, Jean-Pierre; Himbert, Marc; Deneva, Margarita; Nenchev, Marin

    2003-09-20

    We demonstrate and investigate a peculiar mode of cw Yb3+-doped crystal laser operation when two emissions, at two independently tunable wavelengths, are simultaneously produced. Both emissions are generated from a single pumped volume and take place in either a single beam or spatially separated beams. The laser employs original two-channel cavities that use a passive self-injection-locking (PSIL) control to reduce intracavity loss. The advantages of the application of the PSIL technique and some limitations are shown. The conditions for two-wavelength multimode operation of the cw quasi-three-level diode-pumped Yb3+ lasers and the peculiarity of such an operation are carried out both theoretically and experimentally. The results reported are based on the example of a Yb3+:GGG laser but similar results are also obtained with a Yb3+:YAG laser. The laser operates in the 1023-1033-nm (1030-1040-nm) range with a total output power of 0.4 W. A two-wavelength, single longitudinal mode generation is also obtained.

  14. Coaxial foilless diode

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Long; Liu, QingXiang; Li, XiangQiang; Wang, ShaoMeng [College of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031 (China)

    2014-05-15

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  15. Coaxial foilless diode

    Directory of Open Access Journals (Sweden)

    Long Kong

    2014-05-01

    Full Text Available A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  16. Passive mode-locking dynamics in a 3.1GHz quantum dot laser diode operating around 1.5μm

    NARCIS (Netherlands)

    Tahvili, M.S.; Heck, M.J.R.; Nötzel, R.; Smit, M.K.; Bente, E.A.J.M.

    2010-01-01

    We report on passive mode-locking in a 3.1GHz InAs/InP(100) quantum dot laser diode operating around 1.5µm. The range of stable passive mode-locking, detailed measurements of the linewidth of the optical modes and the phase modulation in output pulses are presented.

  17. High-efficient and brightness white organic light-emitting diodes operated at low bias voltage

    Science.gov (United States)

    Zhang, Lei; Yu, Junsheng; Yuan, Kai; Jian, Yadong

    2010-10-01

    White organic light-emitting diodes (OLEDs) used for display application and lighting need to possess high efficiency, high brightness, and low driving voltage. In this work, white OLEDs consisted of ambipolar 9,10-bis 2-naphthyl anthracene (ADN) as a host of blue light-emitting layer (EML) doped with tetrabutyleperlene (TBPe) and a thin codoped layer consisted of N, N'-bis(naphthalen-1-yl)-N,N'-bis(phenyl)-benzidine (NPB) as a host of yellow light-emitting layer doped with 4-(dicyanomethylene)-2-tert-butyl-6-(1,1,7,7-tetramethyljulolidin-4-yl-vinyl)-4H-pyran (DCJTB) were investigated. With appropriate tuning in the film thickness, position, and dopant concentration of the co-doped layer, a white OLED with a luminance yield of 10.02 cd/A with the CIE coordinates of (0.29, 0.33) has been achieved at a bias voltage of 9 V and a luminance level of over 10,000 cd/m2. By introducing the PIN structure with both HIL and bis(10- hydroxybenzo-quinolinato)-beryllium (BeBq2) ETL, the power efficiency of white OLED was improved.

  18. Passively mode-locked 4.6 and 10.5 GHz quantum dot laser diodes around 1.55 μm with large operating regime

    NARCIS (Netherlands)

    Heck, M.J.R.; Renault, A.; Bente, E.A.J.M.; Oei, Y.S.; Smit, M.K.; Eikema, K.S.E.; Ubachs, W.; Anantathanasarn, S.; Nötzel, R.

    2009-01-01

    Passive mode-locking in two-section InAs/InP quantum dot laser diodes operating at wavelengths around 1.55 µm is reported. For a 4.6-GHz laser, a large operating regime of stable mode-locking, with RF-peak heights of over 40 dB, is found for injection currents of 750 mA up to 1.0 A and for values of

  19. Entangling quantum-logic gate operated with an ultrabright semiconductor single-photon source.

    Science.gov (United States)

    Gazzano, O; Almeida, M P; Nowak, A K; Portalupi, S L; Lemaître, A; Sagnes, I; White, A G; Senellart, P

    2013-06-21

    We demonstrate the unambiguous entangling operation of a photonic quantum-logic gate driven by an ultrabright solid-state single-photon source. Indistinguishable single photons emitted by a single semiconductor quantum dot in a micropillar optical cavity are used as target and control qubits. For a source brightness of 0.56 photons per pulse, the measured truth table has an overlap with the ideal case of 68.4±0.5%, increasing to 73.0±1.6% for a source brightness of 0.17 photons per pulse. The gate is entangling: At a source brightness of 0.48, the Bell-state fidelity is above the entangling threshold of 50% and reaches 71.0±3.6% for a source brightness of 0.15.

  20. Diode pumped holmium, thulium and erbium lasers between 2 and 3μm operating CW at room temperature

    International Nuclear Information System (INIS)

    Esterowitz, L.

    1989-01-01

    Diode pumped CW lasers operating between 2 and 3 μm in the heavy rare earth activator ions are reviewed. In Ho, Tm:YAG the authors have demonstrated high efficiency using TM as the sensitizer ion which absorbed the pump radiation. This is followed by a cross relaxation process which allows nearly two excited Tm ions to be produced from one absorbed photon. There is rapid energy migration among the Tm ions followed by energy transfer to the Ho ion. The 2 μm laser action is to a level 460 cm -1 above the ground state. In Tm, Ho:YLF the authors have demonstrated CW cascade laser emission at 2.31 and 2.08 μm. Above threshold for both transitions, two infrared photons are produced for each absorbed pump photon. The theoretical slope efficiency of this system is 72.3% for pumping at 0.791 μm. In Er:YLF CW laser emission at 2.8 μm with a 10% slope efficiency is demonstrated

  1. Failure Mechanisms and Color Stability in Light-Emitting Diodes during Operation in High- Temperature Environments in Presence of Contamination

    Energy Technology Data Exchange (ETDEWEB)

    Lall, Pradeep; Zhang, Hao; Davis, J Lynn

    2015-05-26

    The energy efficiency of light-emitting diode (LED) technology compared to incandescent light bulbs has triggered an increased focus on solid state luminaries for a variety of lighting applications. Solid-state lighting (SSL) utilizes LEDs, for illumination through the process of electroluminescence instead of heating a wire filament as seen with traditional lighting. The fundamental differences in the construction of LED and the incandescent lamp results in different failure modes including lumen degradation, chromaticity shift and drift in the correlated color temperature. The use of LED-based products for safety-critical and harsh environment applications necessitates the characterization of the failure mechanisms and modes. In this paper, failure mechanisms and color stability has been studied for commercially available vertical structured thin film LED (VLED) under harsh environment conditions with and without the presence of contaminants. The VLED used for the study was mounted on a ceramic starboard in order to connect it to the current source. Contamination sources studied include operation in the vicinity of vulcanized rubber and adhesive epoxies in the presence of temperature and humidity. Performance of the VLEDs has been quantified using the measured luminous flux and color shift of the VLEDs subjected to both thermal and humidity stresses under a forward current bias of 350 mA. Results indicate that contamination can result in pre-mature luminous flux degradation and color shift in LEDs.

  2. High-Speed and Low-Energy Flip-Flop Operation of Asymmetric Active-Multimode Interferometer Bi-Stable Laser Diodes

    DEFF Research Database (Denmark)

    Jiang, Haisong; Chaen, Yutaka; Hagio, Takuma

    2011-01-01

    High-speed (121/25 ps rise/fall time) and low-switching energy (7.1 and 3.4 fJ) alloptical flip-flop operation of single-wavelength high-mesa asymmetric active-MMI bi-stable laser diodes is demonstrated for the first time using 25 ps long switching pulses.......High-speed (121/25 ps rise/fall time) and low-switching energy (7.1 and 3.4 fJ) alloptical flip-flop operation of single-wavelength high-mesa asymmetric active-MMI bi-stable laser diodes is demonstrated for the first time using 25 ps long switching pulses....

  3. Alternative p-doped hole transport material for low operating voltage and high efficiency organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Murawski, Caroline, E-mail: caroline.murawski@iapp.de; Fuchs, Cornelius; Hofmann, Simone; Leo, Karl [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Str. 1, 01062 Dresden (Germany); Gather, Malte C. [Institut für Angewandte Photophysik, Technische Universität Dresden, George-Bähr-Str. 1, 01062 Dresden (Germany); SUPA, School of Physics and Astronomy, University of St Andrews, North Haugh, St Andrews, KY16 9SS Scotland (United Kingdom)

    2014-09-15

    We investigate the properties of N,N′-[(Diphenyl-N,N′-bis)9,9,-dimethyl-fluoren-2-yl]-benzidine (BF-DPB) as hole transport material (HTL) in organic light-emitting diodes (OLEDs) and compare BF-DPB to the commonly used HTLs N,N,N′,N′-tetrakis(4-methoxyphenyl)-benzidine (MeO-TPD), 2,2′,7,7′-tetrakis(N,N′-di-p-methylphenylamino)-9,9′-spirobifluorene (Spiro-TTB), and N,N′-di(naphtalene-1-yl)-N,N′-diphenylbenzidine (NPB). The influence of 2,2′-(perfluoronaphthalene-2,6-diylidene)dimalononitrile (F6-TCNNQ p-dopant) concentration in BF-DPB on the operation voltage and efficiency of red and green phosphorescent OLEDs is studied; best results are achieved at 4 wt. % doping. Without any light extraction structure, BF-DPB based red (green) OLEDs achieve a luminous efficacy of 35 .1 lm/W (74 .0 lm/W) at 1000 cd/m{sup 2} and reach a very high brightness of 10 000 cd/m{sup 2} at a very low voltage of 3.2 V (3.1 V). We attribute this exceptionally low driving voltage to the high ionization potential of BF-DPB which enables more efficient hole injection from BF-DPB to the adjacent electron blocking layer. The high efficiency and low driving voltage lead to a significantly lower luminous efficacy roll-off compared to the other compounds and render BF-DPB an excellent HTL material for highly efficient OLEDs.

  4. Continuous-wave laser operation at 743 and 753 nm based on a diode-pumped c-cut Pr:YAlO3 crystal

    Science.gov (United States)

    Lin, Xiuji; Huang, Xiaoxu; Liu, Bin; Xu, Bin; Xu, Huiying; Cai, Zhiping; Xu, Xiaodong; Li, Dongzhen; Liu, Jian; Xu, Jun

    2018-02-01

    We report on blue-diode-pumped continuous-wave Pr:YAlO3 (YAP) crystal lasers. Using a b-cut sample, a maximum output power of 181 mW is achieved at ∼747 nm with slope efficiency of 12.7% with respect to the absorbed power. Using a c-cut sample, a dual-wavelength laser at ∼743 and ∼753 nm is obtained with a total maximum output power of 72 mW by using the blue diode pumping, for the first time to our knowledge. These laser emissions are all linearly polarized and M2 factors of these output laser beams are also measured. YAP is experimentally verified to be one of effective oxide hosts for Pr-doped visible laser operation besides its fluoride counterparts.

  5. Stability issues of high-energy resolution diode type CdTe nuclear radiation detectors in a long-term operation

    CERN Document Server

    Niraula, M; Aoki, T; Tomita, Y; Hatanaka, Y

    2002-01-01

    High-energy resolution diode type CdTe detectors were fabricated by growing an n-type epitaxial layer on high resistivity p-like crystal wafers, and their stability issues during a long-term operation were studied. Room temperature stability of the detectors was not good at low operating biases of around 200 V. However, it could be improved significantly by operating them at higher biases under full depletion conditions. On the other hand, detectors exhibited excellent stability by cooling them slightly below room temperature down to 0 deg. C. The effect of this low level of cooling on detector stability was found to be more significant than that of applying high biases at room temperature. By using the detector type presented here, stable operation could be obtained at moderate operating voltages of around 400 V and with a modest degree of cooling.

  6. Reliable Operation for 14500 h of a Wavelength-Stabilized Diode Laser System on a Microoptical Bench at 671 nm

    DEFF Research Database (Denmark)

    Sumpf, Bernd; Maiwald, Martin; Müller, André

    2012-01-01

    Reliability tests for wavelength-stabilized compact diode laser systems emitting at 671 nm are presented. The devices were mounted on microoptical benches with the dimensions of 13 mm $\\times\\,$4 mm. Reflecting Bragg gratings were used for wavelength stabilization and emission width narrowing...

  7. CW and pulsed operation of a diode-end-pumped Tm:GdVO4 laser at room temperature

    International Nuclear Information System (INIS)

    Wang, Z G; Song, C W; Li, Y F; Ju, Y L; Wang, Y Z

    2009-01-01

    A room-temperature diode-end-pumped acousto-optical (AO) Q-switched Tm:GdVO 4 laser was firstly reported. The minimum AO Q-switch pulse width was measured to be about 48 ns with output power of 2 W and repetition rate of 5 kHz. Continuous-wave output power of 2.8 W at 1912 nm was obtained under the absorbed pump power of 15 W. In addition, laser pulse widths and the ratio of QCW power/CW power at different repetition rates were discussed

  8. All-Optical flip-flop operation using a SOA and DFB laser diode optical feedback combination

    DEFF Research Database (Denmark)

    D'Oosterlinck, W.; Öhman, Filip; Buron, Jakob Due

    2007-01-01

    We report on the switching of an all-optical flip-flop consisting of a semiconductor optical amplifier (SOA) and a distributed feedback laser diode (DFB), bidirectionally coupled to each other. Both simulation and experimental results are presented. Switching times as low as 50ps, minimal required...... switch pulse energies below lpJ and a repetition rate of 1.25GHz have been measured. Contrast ratios over 25dB have been obtained. The dependence on the pulse length and CW input power of the minimal required switch energy is investigated....

  9. High-temperature CW and pulsed operation in constricted double-heterojunction AlGaAs diode lasers

    Science.gov (United States)

    Botez, D.; Connolly, J. C.; Gilbert, D. B.

    1981-01-01

    The behavior of constricted double-heterojunction (CDH) diode lasers has been investigated up to 170 C CW and 270 C pulsed. It is found that the temperature-dependent current concentration effect responsible for low threshold-current sensitivity and temperature-invariant external differential quantum efficiency in CDH lasers saturates at about 100 C. It is also found that over a wide temperature interval (180-280 C) the threshold current density has a To value of 40-50 C and that the spontaneous emission becomes increasingly sublinear above 220 C. Both effects are believed to reflect Auger recombination.

  10. CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates

    KAUST Repository

    Pourhashemi, A.; Farrell, R.M.; Cohen, D.A.; Becerra, D.L.; DenBaars, S.P.; Nakamura, S.

    2016-01-01

    Continuous wave (CW) operation of high-power blue laser diodes (LDs) with polished facets on semi-polar (202̅1̅) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 452 nm, the peak two-facet CW output power from an LD with uncoated facets was 1.71 W at a current of 3 A, corresponding to an optical power density of 32.04 MW/cm2 on each facet. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high-power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high-power CW semi-polar LDs.

  11. Investigating the origin of efficiency droop by profiling the voltage across the multi-quantum well of an operating light-emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Taewoong [Department of Nano-Photonics Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Seong, Tae-Yeon [Department of Nano-Photonics Engineering, Korea University, Seoul 136-713 (Korea, Republic of); School of Materials Science and Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Kwon, Ohmyoung, E-mail: omkwon@korea.ac.kr [School of Mechanical Engineering, Korea University, Seoul 136-713 (Korea, Republic of)

    2016-06-06

    Efficiency droop is a phenomenon in which the efficiency of a light-emitting diode (LED) decreases with the increase in current density. To analyze efficiency droop, direct experimental observations on the energy conversion occurring inside the LED is required. Here, we present the measured voltage profiles on the cross section of an operating LED and analyze them with the cross-sectional temperature profiles obtained in a previous study under the same operation conditions. The measured voltage profiles suggest that with increases in the injection current density, electron depletion shifts from the multi-quantum well through an electron blocking layer to the p-GaN region. This is because electron leakage increases with increases in current density.

  12. CW operation of high-power blue laser diodes with polished facets on semi-polar ( 20 2 ¯ 1 ¯ ) GaN substrates

    KAUST Repository

    Pourhashemi, A.

    2016-10-11

    Continuous wave (CW) operation of high-power blue laser diodes (LDs) with polished facets on semi-polar (202̅1̅) gallium nitride (GaN) substrates is demonstrated. Ridge waveguide LDs were fabricated using indium GaN waveguiding layers and GaN cladding layers. At a lasing wavelength of 452 nm, the peak two-facet CW output power from an LD with uncoated facets was 1.71 W at a current of 3 A, corresponding to an optical power density of 32.04 MW/cm2 on each facet. The dependence of output power on current did not change with repeated CW measurements, indicating that the polished facets did not degrade under high-power CW operation. These results show that polished facets are a viable alternative to cleaved or etched facets for high-power CW semi-polar LDs.

  13. Self-mode-locking operation of a diode-end-pumped Tm:YAP laser with watt-level output power

    Science.gov (United States)

    Zhang, Su; Zhang, Xinlu; Huang, Jinjer; Wang, Tianhan; Dai, Junfeng; Dong, Guangzong

    2018-03-01

    We report on a high power continuous wave (CW) self-mode-locked Tm:YAP laser pumped by a 792 nm laser diode. Without any additional mode-locking elements in the cavity, stable and self-starting mode-locking operation has been realized. The threshold pump power of the CW self-mode-locked Tm:YAP laser is only 5.4 W. The maximum average output power is as high as 1.65 W at the pump power of 12 W, with the repetition frequency of 468 MHz and the center wavelength of 1943 nm. To the best of our knowledge, this is the first CW self-mode-locked Tm:YAP laser. The experiment results show that the Tm:YAP crystal is a promising gain medium for realizing the high power self-mode-locking operation at 2 µm.

  14. Room-Temperature Continuous-Wave Operation of InGaN-Based Blue-Violet Laser Diodes with a Lifetime of 15.6 Hours

    International Nuclear Information System (INIS)

    Zeng Chang; Zhang Shu-Ming; Ji Lian; Zhao De-Gang; Zhu Jian-Jun; Liu Zong-Shun; Jiang De-Sheng; Duan Li-Hong; Wang Hai; Shi Yong-Sheng; Liu Su-Ying; Yang Hui; Wang Huai-Bing; Cao Qing; Chong Ming; Chen Liang-Hui

    2010-01-01

    We report our recent progress of investigations on InGaN-based blue-violet laser diodes (LDs). The room-temperature (RT) cw operation lifetime of LDs has extended to longer than 15.6 h. The LD structure was grown on a c-plane free-standing (FS) GaN substrate by metal organic chemical vapor deposition (MOCVD). The typical threshold current and voltage of LD under RT cw operation are 78 mA and 6.8 V, respectively. The experimental analysis of degradation of LD performances suggests that after aging treatment, the increase of series resistance and threshold current can be mainly attributed to the deterioration of p-type ohmic contact and the decrease of internal quantum efficiency of multiple quantum well (MQW), respectively. (fundamental areas of phenomenology(including applications))

  15. Diode lasers and arrays

    International Nuclear Information System (INIS)

    Streifer, W.

    1988-01-01

    This paper discusses the principles of operation of III-V semiconductor diode lasers, the use of distributed feedback, and high power laser arrays. The semiconductor laser is a robust, miniature, versatile device, which directly converts electricity to light with very high efficiency. Applications to pumping solid-state lasers and to fiber optic and point-to-point communications are reviewed

  16. Demonstration of a CW diode-pumped Ar metastable laser operating at 4  W.

    Science.gov (United States)

    Han, J; Heaven, M C; Moran, P J; Pitz, G A; Guild, E M; Sanderson, C R; Hokr, B

    2017-11-15

    Optically pumped rare gas lasers are being investigated as potential high-energy, high beam quality systems. The lasing medium consists of rare gas atoms (Rg=Ne, Ar, Kr, or Xe) that have been electric discharge excited to the metastable np 5 (n+1)s P3 2 state. Following optical excitation, helium (He) at pressures of 200-1000 Torr is used as the energy transfer agent to create a population inversion. The primary technical difficulty for this scheme is the discharge production of sufficient Rg* metastables in the presence of >200  Torr of He. In this Letter, we describe a pulsed discharge that yields >10 13   cm -3 Ar* in the presence of He at total pressures up to 750 Torr. Using this discharge, a diode-pumped Ar* laser providing 4.1 W has been demonstrated.

  17. Tunable CW diode-pumped Tm,Ho:YLiF4 laser operating at or near room temperature

    Science.gov (United States)

    Mcguckin, Brendan T. (Inventor); Menzies, Robert T. (Inventor)

    1995-01-01

    A conversion efficiency of 42% and slope efficiency of 60% relative to absorbed pump power are obtained from a continuous wave diode-pumped Tm,Ho:YLiF4 laser at 2 microns with output power of 84 mW at a crystal temperature of 275 K. The emission spectrum is etalon tunable over a range of7 nm (16.3/cm) centered on 2.067 microns with fine tuning capability of the transition frequency with crystal temperature at a measured rate of -0.03/(cm)K. The effective emission cross-section is measured to be 5 x 10(exp -21) cm squared. These and other aspects of the laser performance are disclosed in the context of calculated atmospheric absorption characteristics in this spectral region and potential use in remote sensing applications. Single frequency output and frequency stabilization are achieved using an intracavity etalon in conjunction with an external reference etalon.

  18. Operating scheme for the light-emitting diode array of a volumetric display that exhibits multiple full-color dynamic images

    Science.gov (United States)

    Hirayama, Ryuji; Shiraki, Atsushi; Nakayama, Hirotaka; Kakue, Takashi; Shimobaba, Tomoyoshi; Ito, Tomoyoshi

    2017-07-01

    We designed and developed a control circuit for a three-dimensional (3-D) light-emitting diode (LED) array to be used in volumetric displays exhibiting full-color dynamic 3-D images. The circuit was implemented on a field-programmable gate array; therefore, pulse-width modulation, which requires high-speed processing, could be operated in real time. We experimentally evaluated the developed system by measuring the luminance of an LED with varying input and confirmed that the system works appropriately. In addition, we demonstrated that the volumetric display exhibits different full-color dynamic two-dimensional images in two orthogonal directions. Each of the exhibited images could be obtained only from the prescribed viewpoint. Such directional characteristics of the system are beneficial for applications, including digital signage, security systems, art, and amusement.

  19. Diode-laser-pumped high efficiency continuous-wave operation at 912 nm laser in Nd:GdVO4 crystal

    International Nuclear Information System (INIS)

    Yu, X; Chen, F; Gao, J; Li, X D; Yan, R P; Zhang, K; Yu, J H; Zhang, Z H

    2009-01-01

    High efficiency operation on continuous-wave (cw) 912 nm laser at room temperature in Nd:GdVO 4 crystal pumped by 808 nm diode-laser is reported in this letter. The maximum output power of 8.0 W was obtained at the incident un-polarized pump power of 47.0 W, giving the corresponding optical-to-optical conversion efficiency of 17.0% and the average slope efficiency of 22.9%. Further tests show that the lasing threshold is reduced and the efficiency is increased evidently when using the π-polarized 808 nm pump source. 4.8 W 912 nm laser was achieved at the polarized pump power of 21.8 W, optical-to-optical conversion efficiency is increased to 22.0% and average slope efficiency is up to 33.6%

  20. InGaN/GaN light-emitting diode having direct hole injection plugs and its high-current operation.

    Science.gov (United States)

    Kim, Sungjoon; Cho, Seongjae; Jeong, Jaedeok; Kim, Sungjun; Hwang, Sungmin; Kim, Garam; Yoon, Sukho; Park, Byung-Gook

    2017-03-20

    The light-emitting diode (LED) with an improved hole injection and straightforward process integration is proposed. p-type GaN direct hole injection plugs (DHIPs) are formed on locally etched multiple-quantum wells (MQWs) by epitaxial lateral overgrowth (ELO) method. We confirm that the optical output power is increased up to 23.2% at an operating current density of 100 A/cm2. Furthermore, in order to identify the origin of improvement in optical performance, the transient light decay time and light intensity distribution characteristics were analyzed on the DHIP LED devices. Through the calculation of the electroluminescence (EL) decay time, internal quantum efficiency (IQE) is extracted along with the recombination parameters, which reveals that the DHIPs have a significant effect on enhancement of radiative recombination and reduction of efficiency droop. Furthermore, the mapping PL reveals that the DHIP LED also has a potential to improve the light extraction efficiency by hexagonal pyramid shaped DHIPs.

  1. Flexible integrated diode-transistor logic (DTL) driving circuits based on printed carbon nanotube thin film transistors with low operation voltage.

    Science.gov (United States)

    Liu, Tingting; Zhao, Jianwen; Xu, Weiwei; Dou, Junyan; Zhao, Xinluo; Deng, Wei; Wei, Changting; Xu, Wenya; Guo, Wenrui; Su, Wenming; Jie, Jiansheng; Cui, Zheng

    2018-01-03

    Fabrication and application of hybrid functional circuits have become a hot research topic in the field of printed electronics. In this study, a novel flexible diode-transistor logic (DTL) driving circuit is proposed, which was fabricated based on a light emitting diode (LED) integrated with printed high-performance single-walled carbon nanotube (SWCNT) thin-film transistors (TFTs). The LED, which is made of AlGaInP on GaAs, is commercial off-the-shelf, which could generate free electrical charges upon white light illumination. Printed top-gate TFTs were made on a PET substrate by inkjet printing high purity semiconducting SWCNTs (sc-SWCNTs) ink as the semiconductor channel materials, together with printed silver ink as the top-gate electrode and printed poly(pyromellitic dianhydride-co-4,4'-oxydianiline) (PMDA/ODA) as gate dielectric layer. The LED, which is connected to the gate electrode of the TFT, generated electrical charge when illuminated, resulting in biased gate voltage to control the TFT from "ON" status to "OFF" status. The TFTs with a PMDA/ODA gate dielectric exhibited low operating voltages of ±1 V, a small subthreshold swing of 62-105 mV dec -1 and ON/OFF ratio of 10 6 , which enabled DTL driving circuits to have high ON currents, high dark-to-bright current ratios (up to 10 5 ) and good stability under repeated white light illumination. As an application, the flexible DTL driving circuit was connected to external quantum dot LEDs (QLEDs), demonstrating its ability to drive and to control the QLED.

  2. Estimation of Most Favorable Optical Window Position Subject to Achieve Finest Optical Control of Lateral DDR IMPATT Diode Designed to Operate at W-Band

    Directory of Open Access Journals (Sweden)

    A. Acharyya

    2014-06-01

    Full Text Available The optimum position of the optical window (OW of illuminated lateral double-drift region (DDR impact avalanche transit time (IMPATT device has been determined subject to achieve the finest optical control of both DC and RF properties of the device. The OW is a tiny hole that has to be created on the oxide layer through which the light energy of appropriate wavelength can be coupled to the space charge region of the device. A non-sinusoidal voltage is assumed to be applied across the diode and the corresponding terminal current response is obtained from a two-dimensional (2-D large-signal (L-S simulation technique developed by the authors for illuminated lateral DDR IMPATT diode. Both the DC and L-S properties of the illuminated device based on Si, designed to operate at W-band frequencies (75 – 110 GHz are obtained from the said L-S simulation. Simulation is carried out for different incident optical power levels of different wavelengths (600 – 1000 nm by varying the position of the fixed sized OW on the oxide layer along the direction of electrical conduction of the device. Results show that, the most favorable optical tuning can be achieved when the OW is entirely created over the p-type depletion layer, i.e. when the photocurrent is purely electron dominated. Also the 700 nm wavelength is found to be most suitable wavelength for obtaining the maximum optical modulation of both DC and RF properties of the device.

  3. High power diode pumped solid state lasers

    International Nuclear Information System (INIS)

    Solarz, R.; Albrecht, G.; Beach, R.; Comaskey, B.

    1992-01-01

    Although operational for over twenty years, diode pumped solid state lasers have, for most of their existence, been limited to individual diodes pumping a tiny volume of active medium in an end pumped configuration. More recent years have witnessed the appearance of diode bars, packing around 100 diodes in a 1 cm bar which have enabled end and side pumped small solid state lasers at the few Watt level of output. This paper describes the subsequent development of how proper cooling and stacking of bars enables the fabrication of multi kill average power diode pump arrays with irradiances of 1 kw/cm peak and 250 W/cm 2 average pump power. Since typical conversion efficiencies from the diode light to the pumped laser output light are of order 30% or more, kW average power diode pumped solid state lasers now are possible

  4. CW and AO Q-switched operation of a dual-crystal Tm, Ho:GdVO4 laser pumped by two diodes

    International Nuclear Information System (INIS)

    Li, L J; Bai, Y F; Liu, Y W; He, Z L; Wang, J; Yao, B Q; Zhou, S; Xing, M N

    2013-01-01

    Continuous wave (CW) mode and acousto-optic (AO) Q-switched mode operation of a dual-crystal Tm, Ho:GdVO 4 laser is reported. The dual-crystal Tm, Ho:GdVO 4 laser with output wavelength of 2.05 μm was pumped by two laser diodes (LDs). The Tm, Ho:GdVO 4 crystals were cooled by liquid nitrogen and pumped by two fiber-coupled LDs with a center output wavelength of 801.0 nm. A 20.5 W output power was obtained at a 255 mm physical cavity length in CW mode operation, and a 19.6 W average power was obtained at a pulse repetition frequency (PRF) of 10 kHz with a 19 ns pulse duration. Also, the efficiency loss of the laser is not more than 4.4% from CW mode to Q-switch mode, and the M 2 factor, which is measured by the traveling knife-edge method, does not exceed 1.2. (paper)

  5. Diode-pumped continuous-wave blue laser operation of Nd:GGG at 467.0, 467.7, and 468.5 nm

    International Nuclear Information System (INIS)

    Xu, B; Camy, P; Doualan, J L; Braud, A; Moncorgé, R; Cai, Z P; Brenier, A

    2012-01-01

    Intra-cavity frequency doubling of continuous-wave (CW) laser emission on the quasi-three level ( 4 F 3/2 → 4 I 9/2 ) laser transition of Nd 3+ in Nd:GGG is reported by using a three-mirror folded resonator. The thermal lens experienced by the optically-pumped Nd:GGG laser crystal is measured as a function of the absorbed pump power and compared to that found, in the same conditions, in the case of Nd:YAG. Results are interpreted by using a simple model accounting for the absorbed pump power and the thermo-mechanical properties of each laser crystal. Diode-pumped blue laser operation is achieved, for the first time, at 467.0 and 468.5 nm with output powers of 230 and 450 mW, respectively. Simultaneous laser operation resulting both from frequency-doubling and frequency summing at the three 467.1, 467.7, and 468.1 nm laser wavelengths is also obtained with a total output power of 60 mW

  6. Exciplex-Forming Co-Host-Based Red Phosphorescent Organic Light-Emitting Diodes with Long Operational Stability and High Efficiency.

    Science.gov (United States)

    Lee, Jeong-Hwan; Shin, Hyun; Kim, Jae-Min; Kim, Kwon-Hyeon; Kim, Jang-Joo

    2017-02-01

    The use of exciplex forming cohosts and phosphors incredibly boosts the efficiency of organic light-emitting diodes (OLEDs) by providing a barrier-free charge injection into an emitting layer and a broad recombination zone. However, most of the efficient OLEDs based on the exciplex forming cohosts has suffered from the short operational lifetime. Here, we demonstrated phosphorescent OLEDs (PhOLEDs) having both high efficiency and long lifetime by using a new exciplex forming cohost composed of N,N'-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) and (1,3,5-triazine-2,4,6-triyl)tris(benzene-3,1-diyl))tris(diphenylphosphine oxide) (PO-T2T). The red-emitting PhOLEDs using the exciplex forming cohost achieved a maximum external quantum efficiency (EQE) of 34.1% and power efficiency of 62.2 lm W 1- with low operating voltages and low efficiency roll-offs. More importantly, the device demonstrated a long lifetime around 2249 h from 1000 cd m -2 to 900 cd m -2 (LT 90 ) under a continuous flow of constant current. The efficiencies of the devices are the highest for red OLEDs with an LT 90 > 1000 h.

  7. Electron injection in diodes with field emission

    International Nuclear Information System (INIS)

    Denavit, J.; Strobel, G.L.

    1986-01-01

    This paper presents self-consistent steady-state solutions of the space charge, transmitted current, and return currents in diodes with electron injection from the cathode and unlimited field emission of electrons and ions from both electrodes. Time-dependent particle simulations of the diode operation confirm the analytical results and show how these steady states are reached. The results are applicable to thermionic diodes and to photodiodes

  8. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

    OpenAIRE

    Cappuccio, Joseph C., Jr.

    1988-01-01

    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  9. All-optical flip-flop operation based on asymmetric active-multimode interferometer bi-stable laser diodes

    DEFF Research Database (Denmark)

    Jiang, H.; Chaen, Y.; Hagio, T.

    2011-01-01

    We demonstrate fast and low energy all optical flip-flop devices based on asymmetric active-multimode interferometer using high-mesa waveguide structure. The implemented devices showed high speed alloptical flip-flop operation with 25ps long pulses. The rising and falling times of the output sign...

  10. Aligned energy-level design for decreasing operation voltage of tandem white organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Chih-Hao, E-mail: chc@saturn.yzu.edu.tw [Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan, ROC (China); Wu, Zih-Jyun; Liang, Yi-Hu; Chang, Yu-Shuo; Chiu, Chuan-Hao; Tai, Cheng-Wei [Department of Photonics Engineering, Yuan Ze University, Chung-Li 32003, Taiwan, ROC (China); Chang, Hsin-Hua, E-mail: hhua3@mail.vnu.edu.tw [Department of Electro-Optical Engineering, Vanung University, Chung-Li 32061, Taiwan, ROC (China)

    2013-12-02

    In general, organic light-emitting devices (OLEDs) need to operate at higher current density levels to ensure an ample light flux. However, stressed operation will result in poor performance and limited device lifetime. Recently, a tandem structure has been proposed as a pivotal technique to meet the stringent lighting requirements for OLED commercialization, with a research focus on decreasing the concomitant higher operation voltage. Driving two connected emission units (EMUs) in a tandem structure often requires more than twice the driving voltage for a single EMU. This study investigates bipolar host materials and their effective employment in fabricating tandem white phosphorescent OLEDs (PhOLEDs). In addition, the design of a mechanism to align the energy level between the hole transport layer/emitting layer is shown to effectively mitigate operational voltages. In sharp contrast to devices using a unipolar host material, we demonstrate that the turn-on voltage of blue PhOLEDs could be decreased from 3.8 V to 2.7 V through utilizing a bipolar host. Furthermore, applying the proposed techniques to tandem white PhOLEDs produces a luminance of 10{sup 3} cd/m{sup 2} by a 10.1 V driving voltage. - Highlights: • The matched energy level between the hole transport/emitting layer lowers voltages. • Multiple conduction dopants were used to investigate charge generation layer. • Two-color emitters were used to quantify the charge generation strength.

  11. Aligned energy-level design for decreasing operation voltage of tandem white organic light-emitting diodes

    International Nuclear Information System (INIS)

    Chang, Chih-Hao; Wu, Zih-Jyun; Liang, Yi-Hu; Chang, Yu-Shuo; Chiu, Chuan-Hao; Tai, Cheng-Wei; Chang, Hsin-Hua

    2013-01-01

    In general, organic light-emitting devices (OLEDs) need to operate at higher current density levels to ensure an ample light flux. However, stressed operation will result in poor performance and limited device lifetime. Recently, a tandem structure has been proposed as a pivotal technique to meet the stringent lighting requirements for OLED commercialization, with a research focus on decreasing the concomitant higher operation voltage. Driving two connected emission units (EMUs) in a tandem structure often requires more than twice the driving voltage for a single EMU. This study investigates bipolar host materials and their effective employment in fabricating tandem white phosphorescent OLEDs (PhOLEDs). In addition, the design of a mechanism to align the energy level between the hole transport layer/emitting layer is shown to effectively mitigate operational voltages. In sharp contrast to devices using a unipolar host material, we demonstrate that the turn-on voltage of blue PhOLEDs could be decreased from 3.8 V to 2.7 V through utilizing a bipolar host. Furthermore, applying the proposed techniques to tandem white PhOLEDs produces a luminance of 10 3 cd/m 2 by a 10.1 V driving voltage. - Highlights: • The matched energy level between the hole transport/emitting layer lowers voltages. • Multiple conduction dopants were used to investigate charge generation layer. • Two-color emitters were used to quantify the charge generation strength

  12. Continuous wave and AO Q-switch operation Tm,Ho:YAP laser pumped by a laser diode of 798 nm

    International Nuclear Information System (INIS)

    Li, L J; Yao, B Q; Song, C W; Wang, Y Z; Wang, Z G

    2009-01-01

    Continuous wave (CW) and acousto-optical (AO) Q-switch operation of Tm (5 at.%), Ho (0.3 at.%):YAP laser at 2.13 μm wavelength were reported in this paper. The Tm,Ho:YAP crystal was cooled by liquid nitrogen and double-end-pumped by a 14.2 W fiber-coupled laser diode at 798 nm. Different resonator lengths and output couplers for the pump power were tried. A maximum conversion efficiency of 31.3% and a maximum slope efficiency of 35.2% were acquired with CW output power of 4.45 W. Average power of 4.21 W was obtained at pulse repetition frequency (PRF) of 15 kHz, corresponding to an optical-to-optical conversion efficiency of 29.6% and a slope efficiency of 32.4%. The energy per pulse of 2.3 mJ in 64 ns was achieved at 1.5 kHz with the peak power of 35.8 kW

  13. Quasi-three level Nd:YLF fundamental and Raman laser operating under 872-nm and 880-nm direct diode pumping

    Science.gov (United States)

    Wetter, Niklaus U.; Bereczki, Allan; Paes, João. Pedro Fonseca

    2018-02-01

    Nd:YLiF4 is the gain material of choice whenever outstanding beam quality or a birefringent gain material is necessary such as in certain applications for terahertz radiation or dual-frequency mode-locking. However, for high power CW applications the material is hampered by a low thermal fracture threshold. This problem can be mitigated by special 2D pump set-ups or by keeping the quantum defect to a minimum. Direct pumping into the upper laser level of Nd:YLiF4 is usually performed at 880 nm. For quasi-three level laser emission at 908 nm, direct pumping at this wavelength provides a high quantum defect of 0.97, which allows for very high CW pump powers. Although the direct pumping transition to the upper laser state at 872 nm has a slightly smaller quantum defect of 0.96, its pump absorption cross section along the c-axis is 50% higher than at 880 nm, leading to a higher absorption efficiency. In this work we explore, for the first time to our knowledge, 908 nm lasing under 872 nm diode pumping and compare the results with 880 nm pumping for quasicw and cw operation. By inserting a KGW crystal in the cavity, Raman lines at 990 nm and 972 nm were obtained for the first time from a directly pumped 908 nm Nd:YLF fundamental laser for both quasi-cw and cw conditions.

  14. Liquid diode

    International Nuclear Information System (INIS)

    1976-01-01

    The liquid diode is designed for a flowmeter chamber which has an inlet and an outlet duct, and a flow chamber with a cross-section which is greater than inlet. In the space between the inlet and outlet are two screens with a number of spheres, which may be of different sizes and weights. The screen on the inlet side is smaller than that at the outlet, so that the spheres are able to block the inlet under reverse flow conditions, but do not block the outlet. The system functions as a non-return valve. (G.C.)

  15. Effect of light-emitting diode vs. fluorescent lighting on laying hens in aviary hen houses: Part 1 - Operational characteristics of lights and production traits of hens.

    Science.gov (United States)

    Long, H; Zhao, Y; Wang, T; Ning, Z; Xin, H

    2016-01-01

    Light-emitting diode (LED) lights are becoming more affordable for agricultural applications. Despite many lab-scale studies concerning impact of LED on poultry, little research has been documented under field production conditions, especially for laying hens. This 15-month field study was carried out to evaluate the effects of LED vs. fluorescent (FL) lights on laying hens (Dekalb white breed) using 4 (2 pairs) aviary hen houses each at a nominal capacity of 50,000 hens. The evaluation was done regarding operational characteristics of the lights and hen production traits. The results show that spatial distribution of the LED light was less uniform than that of the FL light. Light intensity of the LED light decreased by 27% after 3,360 h use but remained quite steady from 3,360 to 5,760 h use. Eleven out of 762 (1.44%) LED lamps (new at onset of the study) in the 2 houses failed during the 15-month experiment period. The neck area of the LED lamp was hottest, presumably the primary reason for the lamp failure as cracks were noticed in the neck region of all failed LED lamps. No differences were observed in egg weight, hen-day egg production, feed use, and mortality rate between LED and FL regimens. However, hens under the FL had higher eggs per hen housed and better feed conversion than those under the LED during 20 to 70 wk production (P Hens under the LED tended to have less feather uniformity and insulation than those under the FL (P hens under the LED showed a larger median avoidance distance than those under the FL at 36 wk age (P hens under the LED were more alert; but no difference at 60 wk age. More comparative research to quantify behavioral and production responses of different breeds of hens to LED vs. FL lighting seems warranted. © 2015 Poultry Science Association Inc.

  16. High-power and highly efficient diode-cladding-pumped holmium-doped fluoride fiber laser operating at 2.94 microm.

    Science.gov (United States)

    Jackson, Stuart D

    2009-08-01

    A high-power diode-cladding-pumped Ho(3+), Pr(3+)-doped fluoride glass fiber laser is demonstrated. The laser produced a maximum output power of 2.5 W at a slope efficiency of 32% using diode lasers emitting at 1,150 nm. The long-emission wavelength of 2.94 microm measured at maximum pump power, which is particularly suited to medical applications, indicates that tailoring of the proportion of Pr(3+) ions can provide specific emission wavelengths while providing sufficient de-excitation of the lower laser level.

  17. Graphene geometric diodes for terahertz rectennas

    International Nuclear Information System (INIS)

    Zhu Zixu; Joshi, Saumil; Grover, Sachit; Moddel, Garret

    2013-01-01

    We demonstrate a new thin-film graphene diode called a geometric diode that relies on geometric asymmetry to provide rectification at 28 THz. The geometric diode is coupled to an optical antenna to form a rectenna that rectifies incoming radiation. This is the first reported graphene-based antenna-coupled diode working at 28 THz, and potentially at optical frequencies. The planar structure of the geometric diode provides a low RC time constant, on the order of 10 −15 s, required for operation at optical frequencies, and a low impedance for efficient power transfer from the antenna. Fabricated geometric diodes show asymmetric current–voltage characteristics consistent with Monte Carlo simulations for the devices. Rectennas employing the geometric diode coupled to metal and graphene antennas rectify 10.6 µm radiation, corresponding to an operating frequency of 28 THz. The graphene bowtie antenna is the first demonstrated functional antenna made using graphene. Its response indicates that graphene is a suitable terahertz resonator material. Applications for this terahertz diode include terahertz-wave and optical detection, ultra-high-speed electronics and optical power conversion. (paper)

  18. Low-loss, low-confinement GaAs-AlGaAs DQW laser diode with optical trap layer for high-power operation

    NARCIS (Netherlands)

    Buda, M.; Vleuten, van der W.C.; Iordache, G.; Acket, G.A.; Roer, van de T.G.; Es, van C.M.; Roy, van B.H.; Smalbrugge, E.

    1999-01-01

    A low-confinement asymmetric GaAs-AlGaAs double-quantum-well molecular-beam-epitaxy grown laser diode structure with optical trap layer is characterized, The value of the internal absorption coefficient is as low as 1.4 cm-1, while keeping the series resistance at values comparable cm with

  19. Power scaling of laser diode pumped Pr3+:LiYF4 cw lasers: efficient laser operation at 522.6 nm, 545.9 nm, 607.2 nm, and 639.5 nm.

    Science.gov (United States)

    Gün, Teoman; Metz, Philip; Huber, Günter

    2011-03-15

    We report efficient cw laser operation of laser diode pumped Pr(3+)-doped LiYF4 crystals in the visible spectral region. Using two InGaN laser diodes emitting at λ(P)=443.9 nm with maximum output power of 1 W each and a 2.9-mm-long crystal with a doping concentration of 0.5%, output powers of 938 mW, 418 mW, 384 mW, and 773 mW were achieved for the laser wavelengths 639.5 nm, 607.2 nm, 545.9 nm, and 522.6 nm, respectively. The maximum absorbed pump powers were approximately 1.5 W, resulting in slope efficiencies of 63.6%, 32.0%, 52.1%, and 61.5%, as well as electro-optical efficiencies of 9.4%, 4.2%, 3.8%, and 7.7%, respectively. Within these experiments, laser diode-pumped laser action at 545.9 nm was demonstrated for what is believed to be the first time.

  20. Laser diode package with enhanced cooling

    Science.gov (United States)

    Deri, Robert J [Pleasanton, CA; Kotovsky, Jack [Oakland, CA; Spadaccini, Christopher M [Oakland, CA

    2011-09-13

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  1. Developments in lead-salt diode lasers

    International Nuclear Information System (INIS)

    Partin, D.L.

    1985-01-01

    Lead-chalcogenide diode lasers are useful as mid-infrared sources (2-1/2 <λ<30 μm), but have generally operated CW below 100K. A new materials system, PbEuSeTe, has been used to fabricate diode lasers operating from 10K (at 6.5 μm wavelength) up to 174K CW (at 4.4 μm) and up to 280K pulsed (at 3.8 μm). These are large optical cavity single quantum well devices grown by molecular beam epitaxy. These are currently the highest diode laser operating temperatures ever achieved at these wavelengths to our knowledge. Single ended output powers as high as 1 mW single mode (5 mW multimode) have been attained from mesa stripe diodes. These characteristics make these devices attractive for long wavelength fiber optic sensor/communications systems. The performance limits of these devices are discussed

  2. Conical pinched electron beam diode for intense ion beam source

    International Nuclear Information System (INIS)

    Matsukawa, Yoshinobu; Nakagawa, Yoshiro

    1982-01-01

    For the purpose of improvement of the pinched electron beam diode, the production of an ion beam by a diode with electrodes in a conical shape was studied at low voltage operation (--200 kV). The ion beam is emitted from a small region of the diode apex. The mean ion beam current density near the axis at 12 cm from the diode apex is two or three times that from an usual flat parallel diode with the same dimension and impedance. The brightness and the power brightness at the otigin are 450 MA/cm 2 sr and 0.12 TW/cm 2 sr respectively. (author)

  3. Quasi-CW Laser Diode Bar Life Tests

    Science.gov (United States)

    Stephen, Mark A.; Krainak, Michael A.; Dallas, Joseph L.

    1997-01-01

    NASA's Goddard Space Flight Center is developing technology for satellite-based, high peak power, LIDAR transmitters requiring 3-5 years of reliable operation. Semi-conductor laser diodes provide high efficiency pumping of solid state lasers with the promise of long-lived, reliable operation. 100-watt quasi- CW laser diode bars have been baselined for the next generation laser altimeters. Multi-billion shot lifetimes are required. The authors have monitored the performance of several diodes for billions of shots and investigated operational modes for improving diode lifetime.

  4. Continuous-wave operation of a $(20\\bar{2}\\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture

    KAUST Repository

    Megalini, Ludovico; Becerra, Daniel L.; Farrell, Robert M.; Pourhashemi, A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.; Cohen, Daniel A.

    2015-01-01

    © 2015 The Japan Society of Applied Physics. We demonstrated selective and controllable undercut etching of the InGaN/GaN multiple quantum well (MQW) active region of a (2021) laser diode (LD) structure by photoelectrochemical etching. This technique was used to fabricate current aperture edge-emitting blue laser diodes (CALDs), whose performance was compared with that of shallow-etched ridge LDs with a nominally identical epitaxial structure. The threshold current density, threshold voltage, peak output power, and series resistance for the CA-LD (shallow-etched LD) with a 2.5-μm-wide active region were 4.4 (8.1) kA/cm2, 6.1 (7.7) V, 96.5 (63.5)mW, and 4.7 (6.0)Ω under pulsed conditions and before facet coating, respectively.

  5. Continuous-wave operation of a $(20\\bar{2}\\bar{1})$ InGaN laser diode with a photoelectrochemically etched current aperture

    KAUST Repository

    Megalini, Ludovico

    2015-03-06

    © 2015 The Japan Society of Applied Physics. We demonstrated selective and controllable undercut etching of the InGaN/GaN multiple quantum well (MQW) active region of a (2021) laser diode (LD) structure by photoelectrochemical etching. This technique was used to fabricate current aperture edge-emitting blue laser diodes (CALDs), whose performance was compared with that of shallow-etched ridge LDs with a nominally identical epitaxial structure. The threshold current density, threshold voltage, peak output power, and series resistance for the CA-LD (shallow-etched LD) with a 2.5-μm-wide active region were 4.4 (8.1) kA/cm2, 6.1 (7.7) V, 96.5 (63.5)mW, and 4.7 (6.0)Ω under pulsed conditions and before facet coating, respectively.

  6. Red and orange laser operation of Pr:KYF4 pumped by a Nd:YAG/LBO laser at 469.1 nm and a InGaN laser diode at 444 nm.

    Science.gov (United States)

    Xu, B; Starecki, F; Pabœuf, D; Camy, P; Doualan, J L; Cai, Z P; Braud, A; Moncorgé, R; Goldner, Ph; Bretenaker, F

    2013-03-11

    We report the basic luminescence properties and the continuous-wave (CW) laser operation of a Pr(3+)-doped KYF(4) single crystal in the Red and Orange spectral regions by using a new pumping scheme. The pump source is an especially developed, compact, slightly tunable and intra-cavity frequency-doubled diode-pumped Nd:YAG laser delivering a CW output power up to about 1.4 W around 469.1 nm. At this pump wavelength, red and orange laser emissions are obtained at about 642.3 and 605.5 nm, with maximum output powers of 11.3 and 1 mW and associated slope efficiencies of 9.3% and 3.4%, with respect to absorbed pump powers, respectively. For comparison, the Pr:KYF(4) crystal is also pumped by a InGaN blue laser diode operating around 444 nm. In this case, the same red and orange lasers are obtained, but with maximum output powers of 7.8 and 2 mW and the associated slope efficiencies of 7 and 5.8%, respectively. Wavelength tuning for the two lasers is demonstrated by slightly tilting the crystal. Orange laser operation and laser wavelength tuning are reported for the first time.

  7. Study in vitro of dental enamel irradiated with a high power diode laser operating at 960 nm: morphological analysis of post-irradiation dental surface and thermal effect analysis in pulp chamber due to laser application

    International Nuclear Information System (INIS)

    Quinto Junior, Jose

    2001-01-01

    Objectives: This study examines the structural and thermal modifications induced in dental enamel under dye assisted diode laser irradiation. The aim of this study is to verify if this laser-assisted treatment is capable to modify the enamel surface by causing fusion of the enamel surface layer. At the same time, the pulpal temperature rise must be kept low enough in order not to cause pulpar necrosis. To achieve this target, it is necessary to determine suitable laser parameters. As is known, fusion of the enamel surface followed by re-solidification produce a more acid resistant layer. This surface treatment is being researched as a new method for caries prevention. Method and Materials: A series of fourteen identically prepared enamel samples of human teeth were irradiated with a high power diode laser operating at 960 nm and using fiber delivery. Prior to irradiation, a fine layer of cromophorous ink was applied to the enamel surface. In the first part of the experiment the best parameter for pulse duration was determined. In the second part of the experimental phase the same energy density was used but with different repetition rates. During irradiation we monitored the temperature rise in the pulpal cavity. The morphology of the treated samples was analysed under SEM. Results: The morphology of the treated samples showed a homogeneously re-solidified enamel layer. The results of the temperature analysis showed a decrease of the pulpal temperature rise with decreasing repetition rate. Conclusion: With the diode laser it is possible to cause morphological alterations of the enamel surface, which is known to increase the enamel resistance against acid attack, and still maintain the temperature rise in the pulpar chamber below damage threshold. (author)

  8. Analytic model of Applied-B ion diode impedance behavior

    International Nuclear Information System (INIS)

    Miller, P.A.; Mendel, C.W. Jr.

    1987-01-01

    An empirical analysis of impedance data from Applied-B ion diodes used in seven inertial confinement fusion research experiments was published recently. The diodes all operated with impedance values well below the Child's-law value. The analysis uncovered an unusual unifying relationship among data from the different experiments. The analysis suggested that closure of the anode-cathode gap by electrode plasma was not a dominant factor in the experiments, but was not able to elaborate the underlying physics. Here we present a new analytic model of Applied-B ion diodes coupled to accelerators. A critical feature of the diode model is based on magnetic insulation theory. The model successfully describes impedance behavior of these diodes and supports stimulating new viewpoints of the physics of Applied-B ion diode operation

  9. Compact laser-diode-based femtosecond sources

    International Nuclear Information System (INIS)

    Brown, C T A; Cataluna, M A; Lagatsky, A A; Rafailov, E U; Agate, M B; Leburn, C G; Sibbett, W

    2004-01-01

    This paper describes the development of compact femtosecond laser systems that are capable of being directly pumped by laser diodes or are based directly on laser diodes. The paper demonstrates the latest results in a highly efficient vibronic based gain medium and a diode-pumped Yb:KYW laser is reported that has a wall plug efficiency >14%. A Cr 4+ :YAG oscillator is described that generates transform-limited pulses of 81 fs duration at a pulse repetition frequency of >4 GHz. The development of Cr 3+ :LiSAF lasers that can be operated using power supplies based on batteries is briefly discussed. We also present a summary of work being carried out on the generation of fs-pulses from laser diodes and discuss the important issues in this area. Finally, we outline results obtained on the generation of pulses as short as 550 fs directly from a two-section quantum dot laser without any external pulse compression

  10. Modeling of flowing gas diode pumped alkali lasers: dependence of the operation on the gas velocity and on the nature of the buffer gas.

    Science.gov (United States)

    Barmashenko, B D; Rosenwaks, S

    2012-09-01

    A simple, semi-analytical model of flowing gas diode pumped alkali lasers (DPALs) is presented. The model takes into account the rise of temperature in the lasing medium with increasing pump power, resulting in decreasing pump absorption and slope efficiency. The model predicts the dependence of power on the flow velocity in flowing gas DPALs and checks the effect of using a buffer gas with high molar heat capacity and large relaxation rate constant between the 2P3/2 and 2P1/2 fine-structure levels of the alkali atom. It is found that the power strongly increases with flow velocity and that by replacing, e.g., ethane by propane as a buffer gas the power may be further increased by up to 30%. Eight kilowatt is achievable for 20 kW pump at flow velocity of 20  m/s.

  11. Vortex diode jet

    Science.gov (United States)

    Houck, Edward D.

    1994-01-01

    A fluid transfer system that combines a vortex diode with a jet ejector to transfer liquid from one tank to a second tank by a gas pressurization method having no moving mechanical parts in the fluid system. The vortex diode is a device that has a high resistance to flow in one direction and a low resistance to flow in the other.

  12. Nonimaging concentrators for diode-pumped slab lasers

    Science.gov (United States)

    Lacovara, Philip; Gleckman, Philip L.; Holman, Robert L.; Winston, Roland

    1991-10-01

    Diode-pumped slab lasers require concentrators for high-average power operation. We detail the properties of diode lasers and slab lasers which set the concentration requirements and the concentrator design methodologies that are used, and describe some concentrator designs used in high-average power slab lasers at Lincoln Laboratory.

  13. DETERMINATION OF AMMONIA MASS EMISSION FLUX FROM HOG WASTE EFFLUENT SPRAYING OPERATION USING OPEN PATH TUNABLE DIODE LASER SPECTROSCOPY WITH VERTICAL RADIAL PLUME MAPPING ANALYSIS

    Science.gov (United States)

    Emission of ammonia from concentrated animal feeding operations represents an increasingly important environmental issue. Determination of total ammonia mass emission flux from extended area sources such as waste lagoons and waste effluent spraying operations can be evaluated usi...

  14. Direct-current polarization characteristics of various AlGaAs laser diodes

    Science.gov (United States)

    Fuhr, P. L.

    1984-01-01

    Polarization characteristics of AlGaAs laser diodes having various device geometries have been measured. Measurements were performed with the laser diodes operating under dc conditions. Results show that laser diodes having different device geometries have optical outputs that exhibit varying degrees of polarization purity. Implications of this result, with respect to incoherent polarization-beam combining, are addressed.

  15. A Novel Current-Mode Full-Wave Rectifier Based on One CDTA and Two Diodes

    Directory of Open Access Journals (Sweden)

    F. Khateb

    2010-09-01

    Full Text Available Precision rectifiers are important building blocks for analog signal processing. The traditional approach based on diodes and operational amplifiers (OpAmps exhibits undesirable effects caused by limited OpAmp slew rate and diode commutations. In the paper, a full-wave rectifier based on one CDTA and two Schottky diodes is presented. The PSpice simulation results are included.

  16. In vivo evaluation of battery-operated light-emitting diode-based photodynamic therapy efficacy using tumor volume and biomarker expression as endpoints

    Science.gov (United States)

    Mallidi, Srivalleesha; Mai, Zhiming; Rizvi, Imran; Hempstead, Joshua; Arnason, Stephen; Celli, Jonathan; Hasan, Tayyaba

    2015-04-01

    In view of the increase in cancer-related mortality rates in low- to middle-income countries (LMIC), there is an urgent need to develop economical therapies that can be utilized at minimal infrastructure institutions. Photodynamic therapy (PDT), a photochemistry-based treatment modality, offers such a possibility provided that low-cost light sources and photosensitizers are available. In this proof-of-principle study, we focus on adapting the PDT light source to a low-resource setting and compare an inexpensive, portable, battery-powered light-emitting diode (LED) light source with a standard, high-cost laser source. The comparison studies were performed in vivo in a xenograft murine model of human squamous cell carcinoma subjected to 5-aminolevulinic acid-induced protoporphyrin IX PDT. We observed virtually identical control of the tumor burden by both the LED source and the standard laser source. Further insights into the biological response were evaluated by biomarker analysis of necrosis, microvessel density, and hypoxia [carbonic anhydrase IX (CAIX) expression] among groups of control, LED-PDT, and laser-PDT treated mice. There is no significant difference in the percent necrotic volume and CAIX expression in tumors that were treated with the two different light sources. These encouraging preliminary results merit further investigations in orthotopic animal models of cancers prevalent in LMICs.

  17. Mobility balance in the light-emitting layer governs the polaron accumulation and operational stability of organic light-emitting diodes

    Science.gov (United States)

    Kim, Jae-Min; Lee, Chang-Heon; Kim, Jang-Joo

    2017-11-01

    Organic light-emitting diode (OLED) displays are lighter and more flexible, have a wider color gamut, and consume less power than conventional displays. Stable materials and the structural design of the device are important for OLED longevity. Control of charge transport and accumulation in the device is particularly important because the interaction of excitons and polarons results in material degradation. This research investigated the charge dynamics of OLEDs experimentally and by drift-diffusion modeling. Parallel capacitance-voltage measurements of devices provided knowledge of charge behavior at different driving voltages. A comparison of exciplex-forming co-host and single host structures established that the mobility balance in the emitting layers determined the amount of accumulated polarons in those layers. Consequently, an exciplex-forming co-host provides a superior structure in terms of device lifetime and efficiency because of its well-balanced mobility. Minimizing polaron accumulation is key to achieving long OLED device lifetimes. This is a crucial aspect of device physics that must be considered in the device design structure.

  18. Demonstration of enhanced continuous-wave operation of blue laser diodes on a semipolar 202¯1¯ GaN substrate using indium-tin-oxide/thin-p-GaN cladding layers.

    Science.gov (United States)

    Mehari, Shlomo; Cohen, Daniel A; Becerra, Daniel L; Nakamura, Shuji; DenBaars, Steven P

    2018-01-22

    The benefits of utilizing transparent conductive oxide on top of a thin p-GaN layer for continuous-wave (CW) operation of blue laser diodes (LDs) were investigated. A very low operating voltage of 5.35 V at 10 kA/cm 2 was obtained for LDs with 250 nm thick p-GaN compared to 7.3 V for LDs with conventional 650 nm thick p-GaN. An improved thermal performance was also observed for the thin p-GaN samples resulting in a 40% increase in peak light output power and a 32% decrease in surface temperature. Finally, a tradeoff was demonstrated between low operating voltage and increased optical modal loss in the indium tin oxide (ITO) with thinner p-GaN. LDs lasing at 445 nm with 150 nm thick p-GaN had an excess modal loss while LDs with an optimal 250 nm thick p-GaN resulted in optical output power of 1.1 W per facet without facet coatings and a wall-plug efficiency of 15%.

  19. Powerful infrared emitting diodes

    Directory of Open Access Journals (Sweden)

    Kogan L. M.

    2012-02-01

    Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.

  20. BeZnCdSe quantum-well ridge-waveguide laser diodes under low threshold room-temperature continuous-wave operation

    Energy Technology Data Exchange (ETDEWEB)

    Feng, Jijun [Shanghai Key Laboratory of Modern Optical System, Engineering Research Center of Optical Instrument and System (Ministry of Education), School of Optical-Electrical and Computer Engineering, University of Shanghai for Science and Technology, 516 Jungong Road, Shanghai 200093 (China); Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan); Akimoto, Ryoichi, E-mail: r-akimoto@aist.go.jp [Electronics and Photonics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Ibaraki 305-8568 (Japan)

    2015-10-19

    Low threshold current ridge-waveguide BeZnCdSe quantum-well laser diodes (LDs) have been developed by completely etching away the top p-type BeMgZnSe/ZnSe:N short-period superlattice cladding layer, which can suppress the leakage current that flows laterally outside of the electrode. The waveguide LDs are covered with a thick SiO{sub 2} layer and planarized with chemical-mechanical polishing and a reactive ion etching process. Room-temperature lasing under continuous-wave condition is achieved with the laser cavity formed by the cleaved waveguide facets coated with high-reflectivity dielectric films. For a 4 μm-wide green LD lasing around a wavelength of 535 nm, threshold current and voltage of 7.07 mA and 7.89 V are achieved for a cavity length of 300 μm, and the internal differential quantum efficiency, internal absorption loss, gain constant, and nominal transparency current density are estimated to be 27%, 4.09 cm{sup −1}, 29.92 (cm × μm)/kA and 6.35 kA/(cm{sup 2 }× μm), respectively. This compact device can realize a significantly improved performance with much lower threshold power consumption, which would benefit the potential application for ZnSe-based green LDs as light sources in full-color display and projector devices installed in consumer products such as pocket projectors.

  1. Plasma filled diodes and application to a PEOS

    International Nuclear Information System (INIS)

    Grossmann, J.M.; Ottinger, P.F.; Drobot, A.T.; Seftor, L.

    1985-01-01

    Pinched beam diodes generally begin operation at large impedances until the diode has had time to turn on (at which point strong electric fields turn on electric emission at the cathode). Current turn-on is accompanied by a sharp drop in impedance and is accomplished initially through space charge limited flow. As the current increases, the diode impedance will be determined by critical current flow when the electron beam pinches. Eventually the diode shorts out by gap closure as the high density electrode plasmas expand cross the AK gap. After turn-on, then, the diode acts as a low impedance load which is favorable for coupling to a PEOS by allowing for strong insulation of the electron flow from the PEOS to the load. It would be advantageous when using a PEOS to have the impedance of the diode low even at early times. This can be accomplished by introducing a low density plasma in the region between the cathode and the anode. The plasma initially presents the PEOS with a low impedance current path at the load as the switch opens - thereby reducing current losses upstream of the load. As the switch opens, the impedance of the diode can increase as the diode plasma erodes away, and the diode gap opens

  2. Quaternary InGaAsSb Thermophotovoltaic Diodes

    International Nuclear Information System (INIS)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-01-01

    In x Ga 1-x As y Sb 1-y thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E G = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of η TPV = 19.7% and PD =0.58 W/cm 2 respectively for a radiator temperature of T radiator = 950 C, diode temperature of T diode = 27 C, and diode bandgap of E G = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is η TPV = 28% and PD = 0.85W/cm 2 at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V OC is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V OC and thus efficiency is limited by extrinsic recombination processes such as through bulk defects

  3. Powering laser diode systems

    CERN Document Server

    Trestman, Grigoriy A

    2017-01-01

    This Tutorial Text discusses the competent design and skilled use of laser diode drivers (LDDs) and power supplies (PSs) for the electrical components of laser diode systems. It is intended to help power-electronic design engineers during the initial design stages: the choice of the best PS topology, the calculation of parameters and components of the PS circuit, and the computer simulation of the circuit. Readers who use laser diode systems for research, production, and other purposes will also benefit. The book will help readers avoid errors when creating laser systems from ready-made blocks, as well as understand the nature of the "mystical failures" of laser diodes (and possibly prevent them).

  4. Magnetically insulated H- diodes

    International Nuclear Information System (INIS)

    Fisher, A.; Bystritskii, V.; Garate, E.; Prohaska, R.; Rostoker, N.

    1993-01-01

    At the Univ. of California, Irvine, the authors have been studying the production of intense H - beams using pulse power techniques for the past 7 years. Previously, current densities of H - ions for various diode designs at UCI have been a few A/cm 2 . Recently, they have developed diodes similar to the coaxial design of the Lebedev Physical Institute, Moscow, USSR, where current densities of up to 200 A/cm 2 were reported using nuclear activation of a carbon target. In experiments at UCI employing the coaxial diode, current densities of up to 35 A/cm 2 from a passive polyethylene cathode loaded with TiH 2 have been measured using a pinhole camera and CR-39 track recording plastic. The authors have also been working on a self-insulating, annular diode which can generate a directed beam of H - ions. In the annular diode experiments a plasma opening switch was used to provide a prepulse and a current path which self-insulated the diode. These experiments were done on the machine APEX, a 1 MV, 50 ns, 7 Ω pulseline with a unipolar negative prepulse of ∼ 100 kV and 400 ns duration. Currently, the authors are modifying the pulseline to include an external LC circuit which can generate a bipolar, 150 kV, 1 μs duration prepulse (similar prepulse characteristic as in the Lebedev Institute experiments cited above)

  5. Integrated power conditioning for laser diode arrays

    International Nuclear Information System (INIS)

    Hanks, R.L.; Kirbie, H.C.; Newton, M.A.; Farhoud, M.S.

    1995-01-01

    This compact modulator has demonstated its ability to efficiently and accurately drive a laser diode array. The addition of the crowbar protection circuit is an invaluable addition to the integrated system and is capable of protecting the laser diode array against severe damage. We showed that the correlation between measured data and simulation indicates that our modulator model is valid and can be used as a tool in the design of future systems. The spectrometer measurements that we conducted underline the imprtance of current regulation to stable laser operation

  6. Enhanced Performance of Bipolar Cascade Light Emitting Diodes by Doping the Aluminum Oxide Apertures

    National Research Council Canada - National Science Library

    Siskaninetz, William

    2004-01-01

    Performance improvements in multiple-stage, single-cavity bipolar cascade light emitting diodes including reduced operating voltages, enhanced light generation, and reduced device heating are obtained...

  7. Improvement of a Vertical Falling Ball Viscometer for Measuring Engine Oil Properties using 532nm diode laser, with Estimation of the Concentration of operated Oil

    Directory of Open Access Journals (Sweden)

    Dawood O. Altaify

    2017-05-01

    Full Text Available In this work, an improvement of falling ball viscometer was presented using laser beam. Several parameters such as viscosity, shear stress, shear rate, Reynolds number and drag coefficient were calculated for a sample of unused engine oil. In the other words, during the operation of engine, the variation of viscosity occurs due to the increasing in the engine temperature and may in the increasing of the concentration of engine body particles inside the oil due to friction force even with existing the oil filter there are tiny particles that pass through the oil filter, therefore a Lambert’s law was used to estimate the particles concentrations of the operated oil, the resulted graphs show increasing of the impurities concentration with operation time.

  8. Investigation of MIM Diodes for RF Applications

    KAUST Repository

    Khan, Adnan

    2015-05-01

    Metal Insulator Metal (MIM) diodes that work on fast mechanism of tunneling have been used in a number of very high frequency applications such as (Infra-Red) IR detectors and optical Rectennas for energy harvesting. Their ability to operate under zero bias condition as well as the possibility of realizing them through printing makes them attractive for (Radio Frequency) RF applications. However, MIM diodes have not been explored much for RF applications. One reason preventing their widespread RF use is the requirement of a very thin oxide layer essential for the tunneling operation that requires sophisticated nano-fabrication processes. Another issue is that the reliability and stable performance of MIM diodes is highly dependent on the surface roughness of the metallic electrodes. Finally, comprehensive RF characterization has not been performed for MIM diodes reported in the literature, particularly from the perspective of their integration with antennas as well as their rectification abilities. In this thesis, various metal deposition methods such as sputtering, electron beam evaporation, and Atomic Layer Deposition (ALD) are compared in pursuit of achieving low surface roughness. It is worth mentioning here that MIM diodes realized through ALD method have been presented for the first time in this thesis. Amorphous metal alloy have also been investigated in terms of their low surface roughness. Zinc-oxide has been investigated for its suitability as a thin dielectric layer for MIM diodes. Finally, comprehensive RF characterization of MIM diodes has been performed in two ways: 1) by standard S-parameter methods, and 2) by investigating their rectification ability under zero bias operation. It is concluded from the Atomic Force Microscopy (AFM) imaging that surface roughness as low as sub 1 nm can be achieved reliably from crystalline metals such as copper and platinum. This value is comparable to surface roughness achieved from amorphous alloys, which are non

  9. Spectroscopic amplifier for pin diode

    International Nuclear Information System (INIS)

    Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R.

    2014-10-01

    The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

  10. Diode-Assisted Buck-Boost Voltage-Source Inverters

    DEFF Research Database (Denmark)

    Gao, Feng; Loh, Poh Chiang; Teodorescu, Remus

    2009-01-01

    , a number of diode-assisted inverter variants can be designed with each having its own operational principle and voltage gain expression. For controlling them, a generic modulation scheme that can be used for controlling all diode-assisted variants with minimized harmonic distortion and component stress......This paper proposes a number of diode-assisted buck-boost voltage-source inverters with a unique X-shaped diode-capacitor network inserted between the inverter circuitry and dc source for producing a voltage gain that is comparatively higher than those of other buck-boost conversion techniques....... Using the diode-assisted network, the proposed inverters can naturally configure themselves to perform capacitive charging in parallel and discharging in series to give a higher voltage multiplication factor without compromising waveform quality. In addition, by adopting different front-end circuitries...

  11. Intense pulsed light-ion beam generated by planar type self-magnetically insulated diode

    International Nuclear Information System (INIS)

    Yoshikawa, T.; Masugata, K.; Ito, M.; Matsui, M.; Yatsui, K.

    1984-01-01

    New type of ion diode named ''Planar Type Self-Magnetically Insulated Diode'' (PSID) has been developed. By using a 1.5-mm-thick-polyethylene sheet as an anode surface, we have obtained Vsub(d) (diode voltage) -- 886 kV, Isub(d) (diode current) -- 180 kA, and Isub(i) (net ion current) -- 52 kA, yielding the diode efficiency of ion production to be -- 30 %. Multiple-shots operation (more than 40 shots) has been possible with good reproducibility in such a relatively high powers above. (author)

  12. Proto-I switching and diode studies

    International Nuclear Information System (INIS)

    Prestwich, K.R.; Miller, P.A.; McDaniel, D.H.; Poukey, J.W.; Widner, M.M.; Goldstein, S.A.

    1975-01-01

    Proto-I is a 3 MV, 800 kA, 24 ns electron beam accelerator that is under development at Sandia Laboratories. It represents an initial effort to develop a scalable technology that is applicable to accelerators for electron beam driven, inertial confinement fusion studies. Energy is supplied to each of the two diodes from six oil-dielectric Blumlein transmission lines (PFL) operating in parallel. A Marx generator charges three intermediate storage, water-dielectric capacitors which subsequently transfer the stored energy to the PFL. The discharge of the PFL is initiated by the simultaneous closure of 12 triggered oil-dielectric rail switches. Data will be presented on the operation of these multichannel switches. The two diodes have a common anode. Cathode diameters can be varied from 10 to 60 cm. Results of initial diode experiments and comparisons with theory are discussed. Plasma filled diode experiments are also reported, indicating pinch collapse velocities in excess of 10 9 cm/s

  13. Diode laser pumping

    International Nuclear Information System (INIS)

    Skagerlund, L.E.

    1975-01-01

    A diode laser is pumped or pulsed by a repeated capacitive discharge. A capacitor is periodically charged from a dc voltage source via a transformer, the capacitor being discharged through the diode laser via a controlled switching means after one or more charging periods. During a first interval of each charging period the transformer, while unloaded, stores a specific amount of energy supplied from the dc voltage source. During a subsequent interval of the charging period said specific amount of energy is transmitted from the transformer to the capacitor. The discharging of the capacitor takes place during a first interval of a charging period. (auth)

  14. Diode laser spectroscopy of oxygen electronic band at 760 nm

    International Nuclear Information System (INIS)

    Lucchesini, A.; De Rosa, M.; Gozzini, S.

    1998-01-01

    Collisional broadening and shift coefficients have been obtained by analyzing the line shapes of oxygen absorptions in the 760 nm electronic band. By using a diode laser spectrometer with commercially available etherostructure Al x Ga 1-x As diode lasers operating in 'free-running mode', line shape parameters have been collected at room temperature by varying the gas pressure. A systematic study has been carried on seven absorption lines by scanning the diode laser emission wavelength around the gas resonances. The weak absorption lines have been detected by using the wavelength modulation (WM) spectroscopy technique with second-harmonic detection

  15. Deep diode atomic battery

    International Nuclear Information System (INIS)

    Anthony, T.R.; Cline, H.E.

    1977-01-01

    A deep diode atomic battery is made from a bulk semiconductor crystal containing three-dimensional arrays of columnar and lamellar P-N junctions. The battery is powered by gamma rays and x-ray emission from a radioactive source embedded in the interior of the semiconductor crystal

  16. Infrared diode laser spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Civiš, Svatopluk; Cihelka, Jaroslav; Matulková, Irena

    2010-01-01

    Roč. 18, č. 4 (2010), s. 408-420 ISSN 1230-3402 R&D Projects: GA AV ČR IAA400400705 Institutional research plan: CEZ:AV0Z40400503 Keywords : FTIR spectroscopy * absorption spectroscopy * laser diodes Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.027, year: 2010

  17. Achieving Extreme Utilization of Excitons by an Efficient Sandwich-Type Emissive Layer Architecture for Reduced Efficiency Roll-Off and Improved Operational Stability in Organic Light-Emitting Diodes.

    Science.gov (United States)

    Wu, Zhongbin; Sun, Ning; Zhu, Liping; Sun, Hengda; Wang, Jiaxiu; Yang, Dezhi; Qiao, Xianfeng; Chen, Jiangshan; Alshehri, Saad M; Ahamad, Tansir; Ma, Dongge

    2016-02-10

    It has been demonstrated that the efficiency roll-off is generally caused by the accumulation of excitons or charge carriers, which is intimately related to the emissive layer (EML) architecture in organic light-emitting diodes (OLEDs). In this article, an efficient sandwich-type EML structure with a mixed-host EML sandwiched between two single-host EMLs was designed to eliminate this accumulation, thus simultaneously achieving high efficiency, low efficiency roll-off and good operational stability in the resulting OLEDs. The devices show excellent electroluminescence performances, realizing a maximum external quantum efficiency (EQE) of 24.6% with a maximum power efficiency of 105.6 lm W(-1) and a maximum current efficiency of 93.5 cd A(-1). At the high brightness of 5,000 cd m(-2), they still remain as high as 23.3%, 71.1 lm W(-1), and 88.3 cd A(-1), respectively. And, the device lifetime is up to 2000 h at initial luminance of 1000 cd m(-2), which is significantly higher than that of compared devices with conventional EML structures. The improvement mechanism is systematically studied by the dependence of the exciton distribution in EML and the exciton quenching processes. It can be seen that the utilization of the efficient sandwich-type EML broadens the recombination zone width, thus greatly reducing the exciton quenching and increasing the probability of the exciton recombination. It is believed that the design concept provides a new avenue for us to achieve high-performance OLEDs.

  18. Diode pumped solid state laser by two diodes

    International Nuclear Information System (INIS)

    Li Mingzhong; Zhang Xiaomin; Liang Yue; Man Yongzai; Zhou Pizhang

    1995-01-01

    A Nd: YLF laser is pumped by home-made quantum well diode lasers. Datum of laser output energy 60 μJ and peak power 120 mw are observed at wavelength 1.047 μm. On the same pumping condition, the output power synchronously pumped by two diodes is higher than the total output power pumped by two diodes separately. The fluctuation is <3%. The results agree with theoretical analysis

  19. Spin-Wave Diode

    Directory of Open Access Journals (Sweden)

    Jin Lan (兰金

    2015-12-01

    Full Text Available A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures, and it lies at the heart of modern information systems. The spin wave or magnon, representing a collective quasiparticle excitation of the magnetic order in magnetic materials, is a promising candidate for an information carrier for the next-generation energy-saving technologies. Here, we propose a scalable and reprogrammable pure spin-wave logic hardware architecture using domain walls and surface anisotropy stripes as waveguides on a single magnetic wafer. We demonstrate theoretically the design principle of the simplest logic component, a spin-wave diode, utilizing the chiral bound states in a magnetic domain wall with a Dzyaloshinskii-Moriya interaction, and confirm its performance through micromagnetic simulations. Our findings open a new vista for realizing different types of pure spin-wave logic components and finally achieving an energy-efficient and hardware-reprogrammable spin-wave computer.

  20. Shot reproducibility of the self-magnetic-pinch diode at 4.5 MV

    OpenAIRE

    Nichelle Bennett; M. Dale Crain; Darryl W. Droemer; Raymond E. Gignac; Greg Lare; Isidro Molina; Robert Obregon; Chase C. Smith; Frank L. Wilkins; Dale R. Welch; Steve Cordova; Manuel L. Gallegos; Mark D. Johnston; Mark L. Kiefer; Joshua J. Leckbee

    2014-01-01

    In experiments conducted at Sandia National Laboratories’ RITS-6 accelerator, the self-magnetic-pinch diode exhibits significant shot-to-shot variability. Specifically, for identical hardware operated at the same voltage, some shots exhibit a catastrophic drop in diode impedance. A study is underway to identify sources of shot-to-shot variations which correlate with diode impedance collapse. The scope of this report is limited to data collected at 4.5-MV peak voltage and sources of variabilit...

  1. Electrical and optical response of a laser diode to transient ionizing radiation

    International Nuclear Information System (INIS)

    Baggio, J.; Brisset, C.; Sommer, J.L.; D'hose, C.; Lalande, P.; Leray, J.L.; Musseau, O.

    1996-01-01

    The authors have studied transient irradiation effects on the optical and electrical responses of a laser diode. The influence of dose rate, ranging from 10 9 to 10 12 rad(Si)/s, has been investigated through a complete experimental study. Dose rate vulnerability of the laser diode has been observed. Electrical and optical transient responses are determined by the dose rate, the diode structure, and its operating point

  2. Simplified atom trap using a single microwave modulated diode laser

    International Nuclear Information System (INIS)

    Newbury, N.R.; Myatt, C.J.; Wieman, C.E.

    1993-01-01

    We have demonstrated microwave modulation of a diode laser which is operated with optical feedback from a diffraction grating. By directly modulating the diode laser current at frequencies up to 6.8 GHz, we observed 2-30% of the laser power in a single sideband for 20mW of microwave power. Using such a diode laser modulated at 6.6GHz, we have trapped 87 Rb in a vapor cell. With 10mW of microwave power, the number of trapped atoms was only 15% smaller than the number obtained using two lasers in the conventional manner. A microwave modulated diode laser should also be useful for driving stimulated Raman transitions between the hyperfine levels of Rb or Cs

  3. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  4. Silicon Schottky Diode Safe Operating Area

    Science.gov (United States)

    Casey, Megan C.; Campola, Michael J.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Phan, Anthony M.; LaBel, Kenneth A.

    2016-01-01

    Vulnerability of a variety of candidate spacecraft electronics to total ionizing dose and displacement damage is studied. Devices tested include optoelectronics, digital, analog, linear bipolar devices, and hybrid devices.

  5. Vortex Diode Analysis and Testing for Fluoride Salt-Cooled High-Temperature Reactors

    International Nuclear Information System (INIS)

    Yoder, Graydon L. Jr.; Elkassabgi, Yousri M.; De Leon, Gerardo I.; Fetterly, Caitlin N.; Ramos, Jorge A.; Cunningham, Richard Burns

    2012-01-01

    Fluidic diodes are presently being considered for use in several fluoride salt-cooled high-temperature reactor designs. A fluidic diode is a passive device that acts as a leaky check valve. These devices are installed in emergency heat removal systems that are designed to passively remove reactor decay heat using natural circulation. The direct reactor auxiliary cooling system (DRACS) uses DRACS salt-to-salt heat exchangers (DHXs) that operate in a path parallel to the core flow. Because of this geometry, under normal operating conditions some flow bypasses the core and flows through the DHX. A flow diode, operating in reverse direction, is-used to minimize this flow when the primary coolant pumps are in operation, while allowing forward flow through the DHX under natural circulation conditions. The DRACSs reject the core decay heat to the environment under loss-of-flow accident conditions and as such are a reactor safety feature. Fluidic diodes have not previously been used in an operating reactor system, and therefore their characteristics must be quantified to ensure successful operation. This report parametrically examines multiple design parameters of a vortex-type fluidic diode to determine the size of diode needed to reject a particular amount of decay heat. Additional calculations were performed to size a scaled diode that could be tested in the Oak Ridge National Laboratory Liquid Salt Flow Loop. These parametric studies have shown that a 152.4 mm diode could be used as a test article in that facility. A design for this diode is developed, and changes to the loop that will be necessary to test the diode are discussed. Initial testing of a scaled flow diode has been carried out in a water loop. The 150 mm diode design discussed above was modified to improve performance, and the final design tested was a 171.45 mm diameter vortex diode. The results of this testing indicate that diodicities of about 20 can be obtained for diodes of this size. Experimental

  6. High-power dual-wavelength external-Cavity diode laser based on tapered amplifier with tunable terahertz frequency difference

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2011-01-01

    Tunable dual-wavelength operation of a diode laser system based on a tapered diode amplifier with double-Littrow external-cavity feedback is demonstrated around 800nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5:0 THz......, this is the highest output power from a dual-wavelength diode laser system operating with tunable terahertz frequency difference. © 2011 Optical Society of America....

  7. Transurethral vaporesection of prostate: diode laser or thulium laser?

    Science.gov (United States)

    Tan, Xinji; Zhang, Xiaobo; Li, Dongjie; Chen, Xiong; Dai, Yuanqing; Gu, Jie; Chen, Mingquan; Hu, Sheng; Bai, Yao; Ning, Yu

    2018-05-01

    This study compared the safety and effectiveness of the diode laser and thulium laser during prostate transurethral vaporesection for treating benign prostate hyperplasia (BPH). We retrospectively analyzed 205 patients with BPH who underwent a diode laser or thulium laser technique for prostate transurethral vaporesection from June 2016 to June 2017 and who were followed up for 3 months. Baseline characteristics of the patients, perioperative data, postoperative outcomes, and complications were compared. We also assessed the International Prostate Symptom Score (IPSS), quality of life (QoL), maximum flow rate (Q max ), average flow rate (AFR), and postvoid residual volume (PVR) at 1 and 3 months postoperatively to evaluate the functional improvement of each group. There were no significant differences between the diode laser and thulium laser groups related to age, prostate volume, operative time, postoperative hospital stays, hospitalization costs, or perioperative data. The catheterization time was 3.5 ± 0.8 days for the diode laser group and 4.7 ± 1.8 days for the thulium laser group (p diode laser and thulium laser contributes to safe, effective transurethral vaporesection in patients with symptomatic BPH. Diode laser, however, is better than thulium laser for prostate transurethral vaporesection because of its shorter catheterization time. The choice of surgical approach is more important than the choice of laser types during clinical decision making for transurethral laser prostatectomy.

  8. Impedance characteristics of the Bz diode on the LION accelerator

    International Nuclear Information System (INIS)

    Meyerhofer, D.D.; Horioka, K.; Kusse, B.; Rondeau, G.; Struckman, C.

    1987-01-01

    The LION accelerator at Cornell University is being used to study the characteristics of the applied B/sub z/, or 'barrel' diode. This 0.8 TW, 4 ohm, ion accelerator has the ability to take several shots per day, and hence alloys systematic scans to be performed. An important result of a recent series of experiments is that the diode impedance remains relatively constant, decaying only slowly, during the 50 nsec pulse. When the diode is operated with a 4.5 mm gap and a 21 kG insulating magnetic field, the typical diode parameters, are a voltage of 1 MV and a total current of 250 kA, leading to a diode impedance of 4 ohms and power of 0.25 TW. The diode impedance decays with a 100 nsec time constant. The ion beams have peak currents of roughly 125 kA and typical impedances of Bohms, which decays with a time constant of 25 nsec. The Child-Langmuir gap was approximately 2 mm and closed with a velocity of roughly 2X10/sup 6/ cm/sec. Current experimental work is aimed at characterizing the impedance of the B/sub z/ diode as a function of the applied magnetic field, the A-K gap, the anode curvature, and the anode groove parameters. In addition, the effect of changing the voltage rise with a plasma opening switch and of adding an electron limiter is examined. The ion beam quality is examined at the focus of the barrel diode with a swept Thomson parabola and various Rutherford scattering diagnostics

  9. Personal neutron diode dosemeter

    International Nuclear Information System (INIS)

    Barthe, J.; Lahaye, T.; Moiseev, T.; Portal, G.

    1993-01-01

    The control and management of neutron doses, received by workers in nuclear power or research facilities, requires a knowledge of cumulated dose equivalent or dose equivalent rate in real time. Individual dosemeters so far developed for this purpose are scarce and not very satisfactory. Passive dosemeters such as TLD systems based on the albedo effect, nuclear emulsions or solid track detectors, do not give sufficiently accurate measurements. Furthermore, the increase in the quality factor and the more restrictive new ICRP recommendations diminish the maximum admissible threshold making currently used systems obsolete. Other than bubble dosemeter systems, based on thermodynamic effects of a superheated gel, no simple electronic device is available at the present time. The development of diode based dosimetric gamma badges, having a size similar to that of credit cards, has stimulated us to design and develop a personal neutron dosemeter based on a double diode system. The results obtained are very encouraging and practical models should become available in the near future. (author)

  10. Polymer light emitting diodes

    International Nuclear Information System (INIS)

    Gautier-Thianche, Emmmanuelle

    1998-01-01

    We study sandwich type semiconducting polymer light emitting diodes; anode/polymer/cathode. ITO is selected as anode, this polymer is a blend of a commercially available polymer with a high hole transport ability: polyvinyl-carbazole and a laser dye: coumarin-515. Magnesium covered with silver is chosen for the anode. We study the influence of polymer thickness and coumarin doping ratio on electroluminescence spectrum, electric characteristics and quantum efficiency. An important drawback is that diodes lifetime remains low. In the second part of our study we determine degradations causes with X-Ray reflectivity experiments. It may be due to ITO very high roughness. We realize a new type of planar electroluminescent device: a channel type electroluminescent device in which polymer layer is inserted into an aluminium channel. Such a device is by far more stable than using classical sandwich structures with the same polymer composition: indeed, charges are generated by internal-field ionization and there is no injection from the electrode to the polymer. This avoids electrochemical reactions at electrodes, thus reducing degradations routes. (author) [fr

  11. A randomised controlled trial of coblation, diode laser and cold dissection in paediatric tonsillectomy.

    Science.gov (United States)

    Elbadawey, M R; Hegazy, H M; Eltahan, A E; Powell, J

    2015-11-01

    This study aimed to compare the efficacy of diode laser, coblation and cold dissection tonsillectomy in paediatric patients. A total of 120 patients aged 10-15 years with recurrent tonsillitis were recruited. Participants were prospectively randomised to diode laser, coblation or cold dissection tonsillectomy. Operative time and blood loss were recorded. Pain was recorded on a Wong-Baker FACES(®) pain scale. The operative time (10 ± 0.99 minutes), blood loss (20 ± 0.85 ml) and pain were significantly lower with coblation tonsillectomy than with cold dissection tonsillectomy (20 ± 1.0 minutes and 30 ± 1.0 ml; p = 0.0001) and diode laser tonsillectomy (15 ± 0.83 minutes and 25 ± 0.83 ml; p = 0.0001). Diode laser tonsillectomy had a shorter operative time (p = 0.0001) and less blood loss (p = 0.001) compared with cold dissection tonsillectomy. However, at post-operative day seven, the diode laser tonsillectomy group had significantly higher pain scores compared with the cold dissection (p = 0.042) and coblation (p = 0.04) tonsillectomy groups. Both coblation and diode laser tonsillectomy are associated with significantly reduced blood loss and shorter operative times compared with cold dissection tonsillectomy. However, we advocate coblation tonsillectomy because of the lower post-operative pain scores compared with diode laser and cold dissection tonsillectomy.

  12. Complete indium-free CW 200W passively cooled high power diode laser array using double-side cooling technology

    Science.gov (United States)

    Wang, Jingwei; Zhu, Pengfei; Liu, Hui; Liang, Xuejie; Wu, Dihai; Liu, Yalong; Yu, Dongshan; Zah, Chung-en; Liu, Xingsheng

    2017-02-01

    High power diode lasers have been widely used in many fields. To meet the requirements of high power and high reliability, passively cooled single bar CS-packaged diode lasers must be robust to withstand thermal fatigue and operate long lifetime. In this work, a novel complete indium-free double-side cooling technology has been applied to package passively cooled high power diode lasers. Thermal behavior of hard solder CS-package diode lasers with different packaging structures was simulated and analyzed. Based on these results, the device structure and packaging process of double-side cooled CS-packaged diode lasers were optimized. A series of CW 200W 940nm high power diode lasers were developed and fabricated using hard solder bonding technology. The performance of the CW 200W 940nm high power diode lasers, such as output power, spectrum, thermal resistance, near field, far field, smile, lifetime, etc., is characterized and analyzed.

  13. Atomic spectroscopy with diode lasers

    International Nuclear Information System (INIS)

    Tino, G.M.

    1994-01-01

    Some applications of semiconductor diode lasers in atomic spectroscopy are discussed by describing different experiments performed with lasers emitting in the visible and in the near-infrared region. I illustrate the results obtained in the investigation of near-infrared transitions of atomic oxygen and of the visible intercombination line of strontium. I also describe how two offset-frequency-locked diode lasers can be used to excite velocity selective Raman transitions in Cs. I discuss the spectral resolution, the accuracy of frequency measurements, and the detection sensitivity achievable with diode lasers. (orig.)

  14. Improving Reliability of High Power Quasi-CW Laser Diode Arrays for Pumping Solid State Lasers

    Science.gov (United States)

    Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Baggott, Renee S.; Lockard, George E.; Singh, Upendra N.; Kavaya, Michael J.

    2005-01-01

    Most Lidar applications rely on moderate to high power solid state lasers to generate the required transmitted pulses. However, the reliability of solid state lasers, which can operate autonomously over long periods, is constrained by their laser diode pump arrays. Thermal cycling of the active regions is considered the primary reason for rapid degradation of the quasi-CW high power laser diode arrays, and the excessive temperature rise is the leading suspect in premature failure. The thermal issues of laser diode arrays are even more drastic for 2-micron solid state lasers which require considerably longer pump pulses compared to the more commonly used pump arrays for 1-micron lasers. This paper describes several advanced packaging techniques being employed for more efficient heat removal from the active regions of the laser diode bars. Experimental results for several high power laser diode array devices will be reported and their performance when operated at long pulsewidths of about 1msec will be described.

  15. Laterally injected light-emitting diode and laser diode

    Science.gov (United States)

    Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

    2015-06-16

    A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

  16. InGaAs/InP heteroepitaxial Schottky barrier diodes for terahertz applications

    Science.gov (United States)

    Bhapkar, Udayan V.; Li, Yongjun; Mattauch, Robert J.

    1992-01-01

    This paper explores the feasibility of planar, sub-harmonically pumped, anti-parallel InGaAs/InP heteroepitaxial Schottky diodes for terahertz applications. We present calculations of the (I-V) characteristics of such diodes using a numerical model that considers tunneling. We also present noise and conversion loss predictions of diode mixers operated at 500 GHz, and obtained from a multi-port mixer analysis, using the I-V characteristics predicted by our model. Our calculations indicate that InGaAs/InP heteroepitaxial Schottky barrier diodes are expected to have an I-V characteristic with an ideality factor comparable to that of GaAs Schottky diodes. However, the reverse saturation current of InGaAs/InP diodes is expected to be much greater than that of GaAs diodes. These predictions are confirmed by experiment. The mixer analyses predict that sub-harmonically pumped anti-parallel InGaAs/InP diode mixers are expected to offer a 2 dB greater conversion loss and a somewhat higher single sideband noise temperature than their GaAs counterparts. More importantly, the InGaAs/InP devices are predicted to require only one-tenth of the local oscillator power required by similar GaAs diodes.

  17. Thermometric Property of a Diode.

    Science.gov (United States)

    Inman, Fred W.; Woodruff, Dan

    1995-01-01

    Presents a simple way to implement the thermometric property of a semiconductor diode to produce a thermometer with a nearly linear dependence upon temperature over a wide range of temperatures. (JRH)

  18. Enhanced vbasis laser diode package

    Science.gov (United States)

    Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack

    2014-08-19

    A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

  19. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    International Nuclear Information System (INIS)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-01

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency (η TPV ) and a power density (PD) of η TPV = 19% and PD=0.58 W/cm 2 were measured for T radiator = 950 C and T diode = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be η TPV = 26% and PD = 0.75 W/cm 2 . These limits are extended to η TPV = 30% and PD = 0.85W/cm 2 if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are ∼10

  20. Power blue and green laser diodes and their applications

    Science.gov (United States)

    Hager, Thomas; Strauß, Uwe; Eichler, Christoph; Vierheilig, Clemens; Tautz, Sönke; Brüderl, Georg; Stojetz, Bernhard; Wurm, Teresa; Avramescu, Adrian; Somers, André; Ristic, Jelena; Gerhard, Sven; Lell, Alfred; Morgott, Stefan; Mehl, Oliver

    2013-03-01

    InGaN based green laser diodes with output powers up to 50mW are now well established for variety of applications ranging from leveling to special lighting effects and mobile projection of 12lm brightness. In future the highest market potential for visible single mode profile lasers might be laser projection of 20lm. Therefore direct green single-mode laser diodes with higher power are required. We found that self heating was the limiting factor for higher current operation. We present power-current characteristics of improved R and D samples with up to 200mW in cw-operation. An optical output power of 100mW is reached at 215mA, a current level which is suitable for long term operation. Blue InGaN laser diodes are also the ideal source for phosphor based generation of green light sources of high luminance. We present a light engine based on LARP (Laser Activated Remote Phosphor) which can be used in business projectors of several thousand lumens on screen. We discuss the advantages of a laser based systems in comparison with LED light engines. LARP requires highly efficient blue power laser diodes with output power above 1W. Future market penetration of LARP will require lower costs. Therefore we studied new designs for higher powers levels. R and D chips with power-current characteristics up to 4W in continuous wave operation on C-mount at 25°C are presented.

  1. The Light-Emitting Diode as a Light Detector

    Science.gov (United States)

    Baird, William H.; Hack, W. Nathan; Tran, Kiet; Vira, Zeeshan; Pickett, Matthew

    2011-01-01

    A light-emitting diode (LED) and operational amplifier can be used as an affordable method to provide a digital output indicating detection of an intense light source such as a laser beam or high-output LED. When coupled with a microcontroller, the combination can be used as a multiple photogate and timer for under $50. A similar circuit is used…

  2. Self-magnetically-insulated 'plasma-focus diode' as a new source of an intence pulsed light-ion beam

    International Nuclear Information System (INIS)

    Takahashi, Akira; Aga, Keigo; Masugata, Katsumi; Ito, Michiaki; Yatsui, Kiyoshi

    1986-01-01

    A new and simple type of self-magnetically-insulated diode named ''Plasma-Focus Diode'' has been successfully developed, where anode and cathode are constituted by a pair of coaxial cylindrical electrodes similarly to a Mather-type plasma-focus device. Operating conditions are typically as follows: inductively-calibrated diode voltage ∼ 660 kV, diode current ∼ 142 kA, total ion current ∼ 32 kA, pulse width ∼ 90 ns and diode efficiency ∼ 22 %. Multiple-shots operation more than 50 shots has been possible without changing flashboard. Local divergence angle has been observed to be 0.9 deg ∼ 1.6 deg. Using such a simple ion diode, we have demonstrated a possibility of high concentration of beam-power density onto a target placed at the center. (author)

  3. Computer Processing Of Tunable-Diode-Laser Spectra

    Science.gov (United States)

    May, Randy D.

    1991-01-01

    Tunable-diode-laser spectrometer measuring transmission spectrum of gas operates under control of computer, which also processes measurement data. Measurements in three channels processed into spectra. Computer controls current supplied to tunable diode laser, stepping it through small increments of wavelength while processing spectral measurements at each step. Program includes library of routines for general manipulation and plotting of spectra, least-squares fitting of direct-transmission and harmonic-absorption spectra, and deconvolution for determination of laser linewidth and for removal of instrumental broadening of spectral lines.

  4. Diode-pumped solid state laser for inertial fusion energy

    International Nuclear Information System (INIS)

    Payne, S.A.; Krupke, W.F.; Orth, C.D.

    1994-11-01

    The authors evaluate the prospect for development of a diode-pumped solid-state-laser driver in an inertial fusion energy power plant. Using a computer code, they predict that their 1 GWe design will offer electricity at 8.6 cents/kW · hr with the laser operating at 8.6% efficiency and the recycled power level at 31%. The results of their initial subscale experimental testbed of a diode-pumped solid state laser are encouraging, demonstrating good efficiencies and robustness

  5. Distributed-feedback single heterojunction GaAs diode laser

    International Nuclear Information System (INIS)

    Scifres, D.R.; Burnham, R.D.; Streifer, W.

    1974-01-01

    Laser operation of single-heterojunction GaAl As/GaAs diode lasers using a periodic structure within the gain medium of the device, thereby obviating the need for carefully cleaved end crystal faces to produce feedback, is reported. By varying the grating period, wavelengths from 8430 to 8560 A were observed. The threshold current densities were of the same order as for normal single heterojunction diode lasers. Some advantages in output wavelengths were observed over lasers with cleared faces. (U.S.)

  6. MEASUREMENT OF AMMONIA EMISSIONS FROM MECHANICALLY VENTILATED POULTRY HOUSES USING MULTIPATH TUNABLE DIODE LASER SPECTROSCOPY

    Science.gov (United States)

    Ammonia emissions from mechanically ventilated poultry operations are an important environmental concern. Open Path Tunable Diode Laser Absorption Spectroscopy has emerged as a robust real-time method for gas phase measurement of ammonia concentrations in agricultural settings. ...

  7. Microscale solid-state thermal diodes enabling ambient temperature thermal circuits for energy applications

    KAUST Repository

    Wang, Song; Cottrill, Anton L.; Kunai, Yuichiro; Toland, Aubrey R.; Liu, Pingwei; Wang, Wen-Jun; Strano, Michael S.

    2017-01-01

    rectifications range from 1.18 to 1.34. We show that such devices perform reliably enough to operate in thermal diode bridges, dynamic thermal circuits capable of transforming oscillating temperature inputs into single polarity temperature differences – analogous

  8. Diode pumped 1kHz high power Nd:YAG laser with excellent beam quality

    NARCIS (Netherlands)

    Godfried, Herman; Godfried, H.P; Offerhaus, Herman L.

    1997-01-01

    The design and operation of a one kilohertz diode pumped all solid-state Nd:YAG master oscillator power amplifier system with a phase conjugate mirror is presented. The setup allows high power scaling without reduction in beam quality.

  9. High Power Diode Lasers with External Feedback: Overview and Prospects

    DEFF Research Database (Denmark)

    Chi, Mingjun; Petersen, Paul Michael

    2012-01-01

    In summary, different external-cavity feedback techniques to improve the spatial beam quality and narrow the linewidth of the output beam from both BALs and TDLs are presented. Broad-area diode laser system with external-cavity feedback around 800 nm can produce several Watts of output power...... with a good beam quality. Tapered diode laser systems with external-cavity feedback around 800 and 1060 nm can deliver more than 2 W output power with diffraction-limited beam quality and can be operated in single-longitudinal mode. These high-brightness, narrow linewidth, and tunable external-cavity diode...... lasers emerge as the next generation of compact lasers that have the potential of replacing conventional high power laser systems in many existing applications....

  10. Resonance ionization mass spectrometry using tunable diode lasers

    International Nuclear Information System (INIS)

    Shaw, R.W.; Young, J.P.; Smith, D.H.

    1990-01-01

    Tunable semiconductor diode lasers will find many important applications in atomic spectroscopy. They exhibit the desirable attributes of lasers: narrow bandwidth, tunability, and spatial coherence. At the same time, they possess few of the disadvantages of other tunable lasers. They require no alignment, are simple to operate, and are inexpensive. Practical laser spectroscopic instruments can be envisioned. The authors have applied diode lasers to resonance ionization mass spectrometry (RIMS) of some of the lanthanide elements. Sub-Doppler resolution spectra have been recorded and have been used for atomic hyperfine structure analysis. Isotopically-selective ionization has been accomplished, even in cases where photons from a broadband dye laser are part of the overall ionization process and where the isotopic spectral shift is very small. A convenient RIMS instrument for isotope ratio measurements that employs only diode lasers, along with electric field ionization, should be possible

  11. Protection Scheme for Modular Multilevel Converters under Diode Open-Circuit Faults

    DEFF Research Database (Denmark)

    Deng, Fujin; Zhu, Rongwu; Liu, Dong

    2018-01-01

    devices. The diode open-circuit fault in the submodule (SM) is an important issue for the MMC, which would affect the performance of the MMC and disrupt the operation of the MMC. This paper analyzes the impact of diode open-circuit failures in the SMs on the performance of the MMC and proposes...... a protection scheme for the MMC under diode open-circuit faults. The proposed protection scheme not only can effectively eliminate the possible caused high voltage due to the diode open-circuit fault but also can quickly detect the faulty SMs, which effectively avoids the destruction and protects the MMC....... The proposed protection scheme is verified with a downscale MMC prototype in the laboratory. The results confirm the effectiveness of the proposed protection scheme for the MMC under diode open-circuit faults....

  12. Studies of cold protection diodes

    International Nuclear Information System (INIS)

    Carcagno, R.; Zeigler, J.

    1990-01-01

    The feasibility of a passive quench protection system for the Superconducting Supercollider (SSC) main ring magnets depends on the radiation resistance and reliability of the diodes used as current bypass elements. These diodes would be located inside the magnet cryostat, subjecting them to liquid helium temperature and a relatively high radiation flux. Experimental and theoretical efforts have identified a commercially available diode which appears to be capable of surviving the cryogenic temperature and radiation environment of the accelerator. High current IV measurements indicate that the usable lifetime of this diode, based on an estimate of the peak junction temperature during a quench pulse, is an order of magnitude greater then than the expected lifetime of the SSC itself. However, an unexpected relationship was discovered between the diode turn-on voltage at 5 K and the most recent reverse voltage or temperature excursion. This turn-on voltage as a function of radiation exposure appears to be erratic and indicates a need for further investigation. 14 refs., 8 figs., 2 tabs

  13. Studies of cold protection diodes

    International Nuclear Information System (INIS)

    Carcagno, R.; Zeigler, J.

    1990-03-01

    The feasibility of a passive quench protection system for the Superconducting Supercollider (SSC) main ring magnets depends on the radiation resistance and reliability of the diodes used as current bypass elements. These diodes would be located inside the magnet cryostat, subjecting them to liquid helium temperature and a relatively high radiation flux. Experimental and theoretical efforts have identified a commercially available diode which appears to be capable of surviving the cryogenic temperature and radiation environment of the accelerator. High current 4 measurements indicate that the usable lifetime of this diode, based on an estimate of the peak junction temperature during a quench pulse, is an order of magnitude greater then than the expected lifetime of the SSC itself. However, an unexpected relationship was discovered between the diode turn-on voltage at 5 K and the most recent reverse voltage or temperature excursion. This turn-on voltage as a function of radiation exposure appears to be erratic and indicates a need for further investigation. 11 refs., 8 figs., 2 tabs

  14. Design concepts for PBFA-II's applied-B ion diode

    International Nuclear Information System (INIS)

    Rovang, D.C.

    1985-01-01

    The lithium ion diode to be used at the center of Particle Beam Fusion Accelerator-II (PBFA-II) at Sandia National Laboratories is an applied-B ion diode. The center section of the PBFA-II accelerator is where the electrical requirements of the accelerator, the design requirements of the diode, and the operational requirements must all be satisfied simultaneously for a successful experiment. From an operational standpoint, the ion diode is the experimental hub of the accelerator and needs to be easily and quickly installed and removed. Because of the physical size and geometry of the PBFA-II center section, achieving the operational requirements has presented an interesting design challenge. A discussion of the various design requirements and the proposed concepts for satisfying them is presented

  15. Short-Term Audiological Results of Diode Laser in Comparison with Manual Perforation in Stapes Surgery.

    Science.gov (United States)

    Hamerschmidt, Rogerio; Saab, Stephanie Sbizera; Carvalho, Bettina; Carmo, Carolina do

    2018-04-01

    Introduction  Diode laser is a new alternative in stapes surgery for otosclerosis. The present study is the first to compare the short-term results of the surgery performed using diode laser to those obtained through the conventional fenestration technique. Objective  To use audiometry to establish a comparative analysis between the functional results obtained through surgery for otosclerosis using diode laser and the conventional technique. Method  Audiometric evaluation of 12 patients submitted to stapes surgery for otosclerosis, using diode laser or conventional fenestration by needle and drills, between 2014 and 2015. Each group was composed of 6 patients. Pre and post-operative measures were compared for three months in both groups. The speech recognition threshold, the air and bone conduction threshold, as well as the gap between them at 500 Hz, 1 KHz, 2 KHz and 4 KHz were measured. Results  Significant difference in bone conduction and SRT was observed when compared post- and preoperative results in the diode group. However diode and conventional technique groups presented significant differences in air conduction and air-bone gap, suggesting that both can provide functional improvement. Conclusion  Laser stapedotomy is a safe technique with good results. Both laser surgery and the conventional technique have improved the hearing of patients with a discreet advantage for the diode laser. Further prospective and randomized clinical trials are required to disclose all possible benefits of the stapes surgery using diode laser.

  16. Laser Diode Beam Basics, Manipulations and Characterizations

    CERN Document Server

    Sun, Haiyin

    2012-01-01

    Many optical design technical books are available for many years which mainly deal with image optics design based on geometric optics and using sequential raytracing technique. Some books slightly touched laser beam manipulation optics design. On the other hand many books on laser diodes have been published that extensively deal with laser diode physics with little touching on laser diode beam manipulations and characterizations. There are some internet resources dealing with laser diode beams. However, these internet resources have not covered enough materials with enough details on laser diode beam manipulations and characterizations. A technical book concentrated on laser diode beam manipulations and characterizations can fit in to the open and provide useful information to laser diode users. Laser Diode Beam Basics, Manipulations and  Characterizations is concentrated on the very practical side of the subject, it only discusses the basic physics and mathematics that are necessary for the readers in order...

  17. Terahertz optoelectronics with surface plasmon polariton diode.

    Science.gov (United States)

    Vinnakota, Raj K; Genov, Dentcho A

    2014-05-09

    The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

  18. 11.72 sq cm SiC Wafer-scale Interconnected 64 kA PiN Diode

    Science.gov (United States)

    2012-01-30

    drop of 10.3 V. The dissipated energy was 382 J and the calculated action exceeded 1.7 MA2 -s. Preliminary development of high voltage interconnection...scale diode action (surge current integral), a key reliability parameter, exceeded 1.7 MA2 -s. Figure 6: The wafer-scale interconnected diode...scale diode was 382 J and the calculated action exceeded 1.7 MA2 -sec. High voltage operation of PiN diodes, thyristors, and other semiconductor

  19. Few-photon optical diode

    OpenAIRE

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficie...

  20. Wideband 4-diode sampling circuit

    Science.gov (United States)

    Wojtulewicz, Andrzej; Radtke, Maciej

    2016-09-01

    The objective of this work was to develop a wide-band sampling circuit. The device should have the ability to collect samples of a very fast signal applied to its input, strengthen it and prepare for further processing. The study emphasizes the method of sampling pulse shaping. The use of ultrafast pulse generator allows sampling signals with a wide frequency spectrum, reaching several gigahertzes. The device uses a pulse transformer to prepare symmetrical pulses. Their final shape is formed with the help of the step recovery diode, two coplanar strips and Schottky diode. Made device can be used in the sampling oscilloscope, as well as other measurement system.

  1. High-power direct diode laser output by spectral beam combining

    Science.gov (United States)

    Tan, Hao; Meng, Huicheng; Ruan, Xu; Du, Weichuan; Wang, Zhao

    2018-03-01

    We demonstrate a spectral beam combining scheme based on multiple mini-bar stacks, which have more diode laser combining elements, to increase the combined diode laser power and realize equal beam quality in both the fast and slow axes. A spectral beam combining diode laser output of 1130 W is achieved with an operating current of 75 A. When a 9.6 X de-magnifying telescope is introduced between the output mirror and the diffraction grating, to restrain cross-talk among diode laser emitters, a 710 W spectral beam combining diode laser output is achieved at the operating current of 70 A, and the beam quality on the fast and slow axes of the combined beam is about 7.5 mm mrad and 7.3 mm mrad respectively. The power reduction is caused by the existence of a couple resonator between the rear facet of the diode laser and the fast axis collimation lens, and it should be eliminated by using diode laser chips with higher front facet transmission efficiency and a fast axis collimation lens with lower residual reflectivity.

  2. Microscale solid-state thermal diodes enabling ambient temperature thermal circuits for energy applications

    KAUST Repository

    Wang, Song

    2017-05-10

    Thermal diodes, or devices that transport thermal energy asymmetrically, analogous to electrical diodes, hold promise for thermal energy harvesting and conservation, as well as for phononics or information processing. The junction of a phase change material and phase invariant material can form a thermal diode; however, there are limited constituent materials available for a given target temperature, particularly near ambient. In this work, we demonstrate that a micro and nanoporous polystyrene foam can house a paraffin-based phase change material, fused to PMMA, to produce mechanically robust, solid-state thermal diodes capable of ambient operation with Young\\'s moduli larger than 11.5 MPa and 55.2 MPa above and below the melting transition point, respectively. Moreover, the composites show significant changes in thermal conductivity above and below the melting point of the constituent paraffin and rectification that is well-described by our previous theory and the Maxwell–Eucken model. Maximum thermal rectifications range from 1.18 to 1.34. We show that such devices perform reliably enough to operate in thermal diode bridges, dynamic thermal circuits capable of transforming oscillating temperature inputs into single polarity temperature differences – analogous to an electrical diode bridge with widespread implications for transient thermal energy harvesting and conservation. Overall, our approach yields mechanically robust, solid-state thermal diodes capable of engineering design from a mathematical model of phase change and thermal transport, with implications for energy harvesting.

  3. Performance review and reengineering of the protection diodes of the LHC main superconducting magnets

    CERN Document Server

    Savary, F; Bednarek, M J; Dahlerup-Petersen, K; D'Angelo, G; Dib, G; Giloux, C; Grand-Clement, L; Izquierdo Bermudez, S; Moron-Ballester, R; Prin, H; Roger, V; Verweij, A; Willering, G

    2014-01-01

    The LHC main superconducting circuits are composed of up to 154 series-connected dipole magnets and 51 series-connected quadrupole magnets. These magnets operate at 1.9 K in superfluid helium at a nominal current of 11.85 kA. Cold diodes are connected in parallel to each magnet in order to bypass the current in case of a quench in the magnet while ramping down the current in the entire circuit. Both the diodes and the diode leads should therefore be capable of conducting this exponentially decaying current with time constants of up to 100 s. The diode stacks consist of the diodes and their heat sinks, and are essential elements of the protection system from which extremely high reliability is expected. The electrical resistance of 24 diode leads was measured in the LHC machine during operation. Unexpectedly high resistances of the order of 40 μΩ were measured at a few locations, which triggered a comprehensive review of the diode behaviour and of the associated current leads and bolted contacts. In this pap...

  4. Radiation monitoring with CVD diamonds and PIN diodes at BaBar

    Energy Technology Data Exchange (ETDEWEB)

    Bruinsma, M. [University of California Irvine, Irvine, CA 92697 (United States); Burchat, P. [Stanford University, Stanford, CA 94305-4060 (United States); Curry, S. [University of California Irvine, Irvine, CA 92697 (United States)], E-mail: scurry@slac.stanford.edu; Edwards, A.J. [Stanford University, Stanford, CA 94305-4060 (United States); Kagan, H.; Kass, R. [Ohio State University, Columbus, OH 43210 (United States); Kirkby, D. [University of California Irvine, Irvine, CA 92697 (United States); Majewski, S.; Petersen, B.A. [Stanford University, Stanford, CA 94305-4060 (United States)

    2007-12-11

    The BaBar experiment at the Stanford Linear Accelerator Center has been using two polycrystalline chemical vapor deposition (pCVD) diamonds and 12 silicon PIN diodes for radiation monitoring and protection of the Silicon Vertex Tracker (SVT). We have used the pCVD diamonds for more than 3 years, and the PIN diodes for 7 years. We will describe the SVT and SVT radiation monitoring system as well as the operational difficulties and radiation damage effects on the PIN diodes and pCVD diamonds in a high-energy physics environment.

  5. Generation of a cold, intense relativistic electron beam using a magnetized foilless diode

    International Nuclear Information System (INIS)

    Sheffield, R.L.; Montgomery, M.D.; Parker, J.V.; Riepe, K.B.; Singer, S.

    1982-01-01

    An annular electron beam with less than 30 mrad of angular velocity spread, a radius of 1 cm, and a current density exceeding 0.4 MA/cm 2 has been generated with a magnetized foilless diode. The diode current loss is limited to less than a few percent by careful design of the tapered transition region connecting a self-magnetically insulated vacuum transmission line to the externally magnetized foilless diode. Details of the transition section design and operating characteristics of the electron beam generator are given

  6. Recombination of charge carriers in the GaAs-based p-i-n diode

    International Nuclear Information System (INIS)

    Ayzenshtat, G. I.; Yushenko, A. Y.; Gushchin, S. M.; Dmitriev, D. V.; Zhuravlev, K. S.; Toropov, A. I.

    2010-01-01

    It is established that the radiative recombination of charge carriers plays a substantial role in the GaAs-based p-i-n diodes at high densities of the forward current. It is shown experimentally that the diodes operating in microwave integrated circuits intensely emit light in the IR range with wavelengths from 890 to 910 nm. The obtained results indicate the necessity of taking into account the features of recombination processes in the GaAs-based microwave p-i-n diodes.

  7. Ultra-narrow band diode lasers with arbitrary pulse shape modulation (Conference Presentation)

    Science.gov (United States)

    Ryasnyanskiy, Aleksandr I.; Smirnov, Vadim; Mokhun, Oleksiy; Glebov, Alexei L.; Glebov, Leon B.

    2017-03-01

    Wideband emission spectra of laser diode bars (several nanometers) can be largely narrowed by the usage of thick volume Bragg gratings (VBGs) recorded in photo-thermo-refractive glass. Such narrowband systems, with GHz-wide emission spectra, found broad applications for Diode Pumped Alkali vapor Lasers, optically pumped rare gas metastable lasers, Spin Exchange Optical Pumping, atom cooling, etc. Although the majority of current applications of narrow line diode lasers require CW operation, there are a variety of fields where operation in a different pulse mode regime is necessary. Commercial electric pulse generators can provide arbitrary current pulse profiles (sinusoidal, rectangular, triangular and their combinations). The pulse duration and repetition rate however, have an influence on the laser diode temperature, and therefore, the emitting wavelength. Thus, a detailed analysis is needed to understand the correspondence between the optical pulse profiles from a diode laser and the current pulse profiles; how the pulse profile and duty cycle affects the laser performance (e.g. the wavelength stability, signal to noise ratio, power stability etc.). We present the results of detailed studies of the narrowband laser diode performance operating in different temporal regimes with arbitrary pulse profiles. The developed narrowband (16 pm) tunable laser systems at 795 nm are capable of operating in different pulse regimes while keeping the linewidth, wavelength, and signal-to-noise ratio (>20 dB) similar to the corresponding CW modules.

  8. Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

    KAUST Repository

    Khan, A.A.; Jayaswal, Gaurav; Gahaffar, F.A.; Shamim, Atif

    2017-01-01

    For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

  9. Metal-insulator-metal diodes with sub-nanometre surface roughness for energy-harvesting applications

    KAUST Repository

    Khan, A.A.

    2017-07-27

    For ambient radio-frequency (RF) energy harvesting, the available power levels are quite low, and it is highly desirable that the rectifying diodes do not consume any power at all. Contrary to semiconducting diodes, a tunnelling diode – also known as a metal-insulator-metal (MIM) diode – can provide zero-bias rectification, provided the two metals have different work functions. This could result in a complete passive rectenna system. Despite great potential, MIM diodes have not been investigated much in the GHz-frequency regime due to challenging nano-fabrication requirements. In this work, we investigate zero-bias MIM diodes for RF energy-harvesting applications. We studied the surface roughness issue for the bottom metal of the MIM diode for various deposition techniques such as sputtering, atomic layer deposition (ALD) and electron-beam (e-beam) evaporation for crystalline metals as well as for an amorphous alloy, namely ZrCuAlNi. A surface roughness of sub-1nm has been achieved for both the crystalline metals as well as the amorphous alloy, which is vital for the reliable operation of the MIM diode. An MIM diode comprising of a Ti-ZnO-Pt combination yields a zero-bias responsivity of 0.25V−1 and a dynamic resistance of 1200Ω. Complete RF characterisation has been performed by integrating the MIM diode with a coplanar waveguide transmission line. The input impedance varies from 100Ω to 50Ω in the frequency range of between 2GHz and 10GHz, which can be easily matched to typical antenna impedances in this frequency range. Finally, a rectified DC voltage of 4.7mV is obtained for an incoming RF power of 0.4W at zero bias. These preliminary results of zero-bias rectification indicate that complete, passive rectennas (a rectifier and antenna combination) are feasible with further optimisation of MIM devices.

  10. Laser diode technology and applications

    International Nuclear Information System (INIS)

    Figueroa, L.

    1989-01-01

    This book covers a wide range of semiconductor laser technology, from new laser structures and laser design to applications in communications, remote sensing, and optoelectronics. The authors report on new laser diode physics and applications and present a survey of the state of the art as well as progress in new developments

  11. Spin-photon entangling diode

    DEFF Research Database (Denmark)

    Flindt, Christian; Sørensen, A. S.; Lukin, M. D.

    2007-01-01

    We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of t...

  12. Focusing studies of an applied Br extraction diode on the LION accelerator

    International Nuclear Information System (INIS)

    Struckman, C.K.; Kusse, B.R.; Rondeau, G.

    1990-01-01

    The LION Accelerator, 1.5 MV, 4 Ω, is being used to study the characteristics of an applied B r extraction diode. The diode utilizes both an inner and outer cathode and has been observed to operate at high ion current efficiencies compared to previous extraction diodes. Typical efficiencies were measured to be ∼80% which compares very favorably with the efficiencies seen in applied B z diodes. In this paper, the authors report the results of a series of experiments examining the role of the inner cathode in electron loss and ion emission. In addition, operation with an argon gas cell is reported. The ion beam appears to be space-charge neutralized by the gas cell foil alone, and current neutralized when the gas cell pressure is above 100 mT

  13. Air-stable memory array of bistable rectifying diodes based on ferroelectric-semiconductor polymer blends

    Science.gov (United States)

    Kumar, Manasvi; Sharifi Dehsari, Hamed; Anwar, Saleem; Asadi, Kamal

    2018-03-01

    Organic bistable diodes based on phase-separated blends of ferroelectric and semiconducting polymers have emerged as promising candidates for non-volatile information storage for low-cost solution processable electronics. One of the bottlenecks impeding upscaling is stability and reliable operation of the array in air. Here, we present a memory array fabricated with an air-stable amine-based semiconducting polymer. Memory diode fabrication and full electrical characterizations were carried out in atmospheric conditions (23 °C and 45% relative humidity). The memory diodes showed on/off ratios greater than 100 and further exhibited robust and stable performance upon continuous write-read-erase-read cycles. Moreover, we demonstrate a 4-bit memory array that is free from cross-talk with a shelf-life of several months. Demonstration of the stability and reliable air operation further strengthens the feasibility of the resistance switching in ferroelectric memory diodes for low-cost applications.

  14. Simulation of electron and ion bipolar flow in high current diode with magnetic insulation

    International Nuclear Information System (INIS)

    Vrba, P.; Engelko, V.I.

    1990-08-01

    Numerical simulation of the formation of the collector ion flow in a magnetically insulated ion diode (MID) with a hollow cylindrical and cone-shaped cathode was studied. Such cathodes are often used for the production of tubular high current microsecond electron beams. The ions, emitted by the collector and born as a result of ionization of the residual gas by the electron beam, are focused into the cathode plasma region. This effect can adversely influence the diode operation

  15. Emission characteristics of laser and superluminescent diodes with a gradient-index waveguide

    Energy Technology Data Exchange (ETDEWEB)

    Bazarov, A.E.; Garmash, I.A.; Goldobin, I.S.; Eliukhin, V.A.; Pak, G.T.

    1987-05-01

    A study is made of the emission characteristics of laser and superluminescent diodes with gradient-index waveguides based on Al(x)Ga(1-x)As solid solutions, operating in the CW mode at room temperature. The coupling coefficients for a single-mode fiber are 25 and 18 percent for laser and superluminescent diodes, respectively, when an interface device consisting of three microlenses is used. 6 references.

  16. Three Level Diode Clamped Inverter Fed Induction Motor with Dtc-Svm

    OpenAIRE

    V. Ranjith Kumar

    2013-01-01

    This project presents a three-level diode-clamped inverter feeding an asynchronous motor drive with direct torque control (DTC). The control method is based on DTC operating principles. The stator voltage vector reference is computed from the stator flux and torque errors imposed by the flux and torque controllers. This voltage reference is then generated using a diode-clamped inverter, where each phase of the inverter can be implemented using a dc source, which would be available from fuel c...

  17. Orthogonal linear polarization tunable-beat ring laser with a superluminescent diode

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, Y.; Yoshino, T. [Department of Electronic Engineering, Faculty of Engineering, Gunma University, 1-5-1 Tenjin-cho, Kiryu, Gunma 376 (Japan)

    1997-09-01

    An orthogonal linear polarization operated ring laser with a superluminescent diode has been demonstrated to generate a tunable optical beat signal. The ring cavity contains a superluminescent diode as the optical gain medium, Faraday rotators, and a variable phase retarder (Babinet-Soleil compensator). By controlling the retarder, we changed the beat frequency in the range from a few tens of megahertz to 100 MHz. {copyright} 1997 Optical Society of America

  18. Free space broad-bandwidth tunable laser diode based on Littman configuration for 3D profile measurement

    Science.gov (United States)

    Shirazi, Muhammad Faizan; Kim, Pilun; Jeon, Mansik; Kim, Chang-Seok; Kim, Jeehyun

    2018-05-01

    We developed a tunable laser diode for an optical coherence tomography system that can perform three-dimensional profile measurement using an area scanning technique. The tunable laser diode is designed using an Eagleyard tunable laser diode with a galvano filter. The Littman free space configuration is used to demonstrate laser operation. The line- and bandwidths of this source are 0.27 nm (∼110 GHz) and 43 nm, respectively, at the center wavelength of 860 nm. The output power is 20 mW at an operating current of 150 mA. A step height target is imaged using a wide-area scanning system to show the measurement accuracy of the proposed tunable laser diode. A TEM grid is also imaged to measure the topography and thickness of the sample by proposed tunable laser diode.

  19. Hybrid simulation of electrode plasmas in high-power diodes

    International Nuclear Information System (INIS)

    Welch, Dale R.; Rose, David V.; Bruner, Nichelle; Clark, Robert E.; Oliver, Bryan V.; Hahn, Kelly D.; Johnston, Mark D.

    2009-01-01

    New numerical techniques for simulating the formation and evolution of cathode and anode plasmas have been successfully implemented in a hybrid code. The dynamics of expanding electrode plasmas has long been recognized as a limiting factor in the impedance lifetimes of high-power vacuum diodes and magnetically insulated transmission lines. Realistic modeling of such plasmas is being pursued to aid in understanding the operating characteristics of these devices as well as establishing scaling relations for reliable extrapolation to higher voltages. Here, in addition to kinetic and fluid modeling, a hybrid particle-in-cell technique is described that models high density, thermal plasmas as an inertial fluid which transitions to kinetic electron or ion macroparticles above a prescribed energy. The hybrid technique is computationally efficient and does not require resolution of the Debye length. These techniques are first tested on a simple planar diode then applied to the evolution of both cathode and anode plasmas in a high-power self-magnetic pinch diode. The impact of an intense electron flux on the anode surface leads to rapid heating of contaminant material and diode impedance loss.

  20. Diode laser for the treatment of telangiectasias following hemangioma involution.

    Science.gov (United States)

    Cerrati, Eric W; O, Teresa M; Chung, Hoyun; Waner, Milton

    2015-02-01

    Infantile hemangiomas are well known for their rapid growth during the first 6 to 9 months of life, followed by a spontaneous but slow involution. The standard of care is to treat these lesions at an early age with propranolol to expedite the involution process; however, surgery still remains an active component in the management. Medical treatment with propranolol or natural involution will often result in residual telangiectasias. We evaluated the efficacy of using a diode laser as a treatment for telangiectasias following cervicofacial infantile hemangioma involution. Case series with chart review. Tertiary care hospital and practice specializing in the care of vascular anomalies. Twenty patients, aged 4 months to 11 years (average 2.69 years), underwent treatment with a 532-nm diode laser to treat the residual telangiectasias following hemangioma involution. All procedures were performed in the operating room. To assess the efficacy, we independently evaluated pre- and posttreatment digital photographs and ranked them on a 0- to 4-point scale (0 = no change and 4 = complete response). Adverse reactions were also recorded. The telangiectasias showed considerable improvement following treatment. In more than half of the patients treated, the affected area demonstrated a complete response. No adverse reactions were noted. A 532-nm diode laser effectively treats the remaining telangiectasias following hemangioma involution. Whether used independently or in conjunction with other treatment modalities, the diode laser should be part of the surgical armamentarium when treating infantile hemangiomas. © American Academy of Otolaryngology—Head and Neck Surgery Foundation 2014.

  1. Anode plasma dynamics in the self-magnetic-pinch diode

    Directory of Open Access Journals (Sweden)

    Nichelle Bruner

    2011-02-01

    Full Text Available The self-magnetic-pinch diode is being developed as an intense electron beam source for pulsed-power-driven x-ray radiography. In high-power operation, the beam electrons desorb contaminants from the anode surface from which positive ions are drawn to the cathode. The counterstreaming electrons and ions establish an equilibrium current. It has long been recognized, however, that expanding electrode plasmas can disrupt this equilibrium and cause rapid reduction of the diode impedance and the radiation pulse. Recently developed numerical techniques, which enable simultaneous modeling of particle currents with 10^{13}  cm^{-3} densities to plasmas of near solid density, are applied to a model of the self-magnetic-pinch diode which includes the formation and evolution of anode surface plasmas. Two mechanisms are shown to cause rapid impedance loss, anode plasma expansion into the anode-cathode (A-K gap, and increased ion space-charge near the cathode surface. The former mechanism dominates for shorter A-K gaps, while the latter dominates for longer gaps. Model results qualitatively reproduce the time-dependent impedances measured for this diode.

  2. Local mechanical stress relaxation of Gunn diodes irradiated by protons

    International Nuclear Information System (INIS)

    Gradoboev, A V; Tesleva, E P

    2017-01-01

    The aim of the work is studying the impact of Gunn diodes thermocompression bonding conditions upon their resistance to being radiated with protons of various energies. It was established that the tough conditions of Gunn diodes thermocompression bonding results in local mechanic stresses introduced into the active layer of the device, reduction of electron mobility because of the faults introduction and, subsequently, to reduction of operating current, power of UHF generation, percentage of qualitative units production and general reduction of production efficiency of the devices with required characteristics. Irradiation of Gunn diodes produced under the tough conditions of thermocompression bonding with protons which energy is (40–60) MeV with an absorbed dose of (1–6)·10 2 Gy does not practically reduce the radiation resistance of Gunn diodes produced with application of the given technique. This technique can be recommended for all semiconductor devices on the base of GaAs, which parameters depend significantly upon the mobility of the electrons, to increase the efficiency of production. (paper)

  3. Seven-laser diode end-pumped Nd

    International Nuclear Information System (INIS)

    Berger, J.; Welch, D.F.; Streifer, W.; Scifres, D.R.; Smith, J.J.; Hoffman, H.J.; Peisley, D.; Radecki, D.

    1988-01-01

    End pumping of solid-state lasers by single semiconductor laser diode arrays (LDAs) is efficient, but the maximum pump power is limited by the source brightness and matching the TEM/sub 00/ Nd:YAG cavity mode. To increase the output power from a solid-state Nd:YAG laser, one option is to employ a multiplicity of LDA to provide more pump power than is available from a single source. The authors report herein a 660-mW cw TEM/sub 00/ Nd:YAG laser, end-pumped by seven LDA, with bundled optical fibers coupling the light from each diode to the Nd:YAG rod end. The maximum electrical-to-optical conversion efficiency attained was 4.7% at 560-mW Nd:YAG output power. The LDAs (SDL-2430-C, 100 μm wide) were mounted on separate thermoelectric coolers to tune emission wavelength to the Nd:YAG absorption bands. The diodes were operated at their rated output power (50,000 h mean time to failure). The 110/125-μm diam 0.37-N.A. fibers were butt coupled to the lasers and glued together into a hexagonal close pack. The authors have obtained the highest average power demonstrated to date in the TEM/sub 00/ mode from a Nd:YAG laser, reliably end-pumped by multiple laser diodes with good efficiency

  4. 3.1 W narrowband blue external cavity diode laser

    Science.gov (United States)

    Peng, Jue; Ren, Huaijin; Zhou, Kun; Li, Yi; Du, Weichuan; Gao, Songxin; Li, Ruijun; Liu, Jianping; Li, Deyao; Yang, Hui

    2018-03-01

    We reported a high-power narrowband blue diode laser which is suitable for subsequent nonlinear frequency conversion into the deep ultraviolet (DUV) spectral range. The laser is based on an external cavity diode laser (ECDL) system using a commercially available GaN-based high-power blue laser diode emitting at 448 nm. Longitudinal mode selection is realized by using a surface diffraction grating in Littrow configuration. The diffraction efficiency of the grating was optimized by controlling the polarization state of the laser beam incident on the grating. A maximum optical output power of 3.1 W in continuous-wave operation with a spectral width of 60 pm and a side-mode suppression ratio (SMSR) larger than 10 dB at 448.4 nm is achieved. Based on the experimental spectra and output powers, the theoretical efficiency and output power of the subsequent nonlinear frequency conversion were calculated according to the Boyd- Kleinman theory. The single-pass conversion efficiency and output power is expected to be 1.9×10-4 and 0.57 mW, respectively, at the 3.1 W output power of the ECDL. The high-power narrowband blue diode laser is very promising as pump source in the subsequent nonlinear frequency conversion.

  5. The danger of semiconductor laser diode radiation to the human eye

    International Nuclear Information System (INIS)

    Nier, J.

    1977-01-01

    The UVV 'Laserstrahlen' (laser beam regulation) sets maximum permissible values for radiation exposure that must not be exceeded on the cornea or skin (wavelength range 200 to 1400nm; cornea values: Normal pulsed operation 5 x 10 -7 Ws/cm 2 , continuous operation (>0.1s)5 x 10 -6 W/cm 2 ). Especially laser diodes emitting in the near infrared invite careless handling, of which this paper warns by a detailed illustration of the danger involved and by numerical examples. Data are given on two commercial laser diodes, a continuous operation diode (continuous power 5mW) and a pulse diode (peak pwer 1W, pulse duration 0.2μs), as well as data on aperture angles and geometrical dimensions. Critical cornea and skin distances are distinguished below which the exposure of cornea and skin in the axis of the emission beam is dangerous. For the unfavourable conditions of focussing with a lens (f = 4cm), the following critical cornea distances are obtained: Continuous diode 2.5 km; pulse diode 23.5m. Calculation formulas for special cases are given. (orig.) 891 MG [de

  6. Influence of the anisotropy on the performance of D-band SiC IMPATT diodes

    Science.gov (United States)

    Chen, Qing; Yang, Lin'an; Wang, Shulong; Zhang, Yue; Dai, Yang; Hao, Yue

    2015-03-01

    Numerical simulation has been made to predict the RF performance of direction and direction p+/n/n-/n+ (single drift region) 4H silicon carbide (4H-SiC) impact-ionization-avalanche-transit-time (IMPATT) diodes for operation at D-band frequencies. We observed that the output performance of 4H-SiC IMPATT diode is sensitive to the crystal direction of the one-dimensional current flow. The simulation results show that direction 4H-SiC IMPATT diode provides larger breakdown voltage for its lower electron and hole ionization rates and higher dc-to-rf conversion efficiency (η) for its higher ratio of drift zone voltage drop (VD) to breakdown voltage (VB) compared with those for direction 4H-SiC IMPATT diode, which lead to higher-millimeter-wave power output for direction 4H-SiC IMPATT compared to direction. However, the quality factor Q for the direction 4H-SiC IMPATT diode is lower than that of direction, which implies that the direction 4H-SiC IMPATT diode exhibits better stability and higher growth rate of microwave oscillation compared with direction 4H-SiC IMPATT diode.

  7. Electron collector and ion species experiments on the LION extractor ion diode

    International Nuclear Information System (INIS)

    Rondeau, G.; Greenly, J.B.; Hammer, D.A.; Horioka, K.; Meyerhofer, D.D.

    1987-01-01

    Studies of the effects of an electron collector on the electron flow in an ion diode and on diode impedance history are being done with an extractor geometry ion diode (B/sub r/ magnetic insulation field) on the LION accelerator (1.5 MV, 4Ω, 40 ns). The collector is a flux-penetrable metal protrusion on the inner radius of the anode that collects electrons. This device increases the diode operating impedance particularly during the later part of the pulse when the diode impedance collapses without the collector. In the present set of experiments, several thin wires are inserted into the anode and allowed to protrude a few millimeters into the A-K gap. These wires are damaged by the electron flow during the pulse and by measuring the length of the remaining wire, the distance of the electron layer from the anode can be inferred. The ion current density is also measured in three radial locations across the diode, giving a measure, through the Child-Langmuir law, of the effective gap spacing between the anode and the electron sheath. A simple model is proposed to account for the scaling of ion current density with the diode voltage observed in the experiment

  8. Radiation effects on breakdown in silicon multiguarded diodes

    International Nuclear Information System (INIS)

    Bisello, D.; Da Rold, M.; Franzin, L.; Wheadon, R.

    1996-01-01

    The authors have investigated the current-voltage characteristics of silicon PIN diodes with a number of different multiguard structures. These structures were designed to increase the overall device breakdown voltage. The same measurements were carried out after gamma irradiation at different doses and neutron irradiation at fluences beyond type-inversion. This study is a first step towards defining guard structures optimized for operation in high-radiation environments such as those expected at the LHC

  9. Electron dosimetry in irradiation processing with rad-hard diodes

    International Nuclear Information System (INIS)

    Santos, Thais Cavalheri dos

    2012-01-01

    This work had the aim of the development of dosimetric systems based on Si special diodes, resistant to radiation damage to online monitoring of irradiation processing using 1.5 MeV electrons energy and for relative dosimetry and clinical electron beam scanning within an energy range of 6 MeV up to 21 MeV. The diodes used were produced by Float Zone standard (FZ), Magnetic Czochralski (MCz) and epitaxy growth (EPI) methods. In order to use the diodes as detectors, they were fixed on alumina base to allow the connection of the polarization electrodes and the signals extraction. After the diode assembly on the base, each one was housed in a black acrylic probe with aluminized Mylar® window and LEMO® connector. With the devices operating in photovoltaic mode, the integration of the current signals as a function of irradiation time allowed obtain the charge produced in the sensitive volume of each diode irradiated. The electron accelerator used for high doses irradiation was the DC 1500/25/4 JOB 188 of the 1.5 MeV installed at the Radiation Technology Center of the IPEN/CNEN-SP. The current profile as function of exposure time, the response repeatability, the sensitivity as function of absorbed dose and the dose response curve were studied for each device. In comparison to FZ diode, we observed a greater decrease in the sensitivity for MCz diode, and good repeatability in both cases. Also, the increasing of the charge with the absorbed dose was well fitted by a second order polynomial function. In the EPI diode characterization, this one exhibited repeatability better than CTA dosimeters applied routinely in radiation processing. The above results indicate the potential use of these radiation hardness Si diodes in online dosimetry to high doses applications. For low doses irradiation were used the linear accelerators KD2 and Primus, both manufactured by Siemens and located at Sirio-Libanes Hospital. The diodes responses were evaluated for electron beams within the

  10. Characterisation of Silicon Pad Diodes

    CERN Document Server

    Hodson, Thomas Connor

    2017-01-01

    Silicon pad sensors are used in high luminosity particle detectors because of their excellent timing resolution, radiation tolerance and possible high granularity. The effect of different design decisions on detector performance can be investigated nondestructively through electronic characterisation of the sensor diodes. Methods for making accurate measurements of leakage current and cell capacitance are described using both a standard approach with tungsten needles and an automated approach with a custom multiplexer and probing setup.

  11. 1-W quasi-cw near-diffraction-limited semiconductor laser pumped optically by a fibre-coupled diode bar

    OpenAIRE

    Dhanjal, S.; Hoogland, S.; Roberts, J.S.; Hayward, R.A.; Clarkson, W.A.; Tropper, Anne

    2000-01-01

    We describe a diode-bar-pumped vertical-external-cavity surface-emitting semiconductor laser, which in quasi-cw operation emitted a peak power of >1 W at 1020 nm in a circular, near diffraction-limited beam.

  12. Continuous Water Vapor Mass Flux and Temperature Measurements in a Model Scramjet Combustor Using a Diode Laser Sensor

    National Research Council Canada - National Science Library

    Upschulte, B. L; Miller, M. F; Allen, M. G; Jackson, K; Gruber, M; Mathur, T

    1998-01-01

    A sensor for simultaneous measurements of water vapor density, temperature and velocity has been developed based on absorption techniques using room temperature diode lasers (InGaAsP) operating at 1.31 micrometers...

  13. A single-molecule diode

    Science.gov (United States)

    Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B.; Mayor, Marcel

    2005-01-01

    We have designed and synthesized a molecular rod that consists of two weakly coupled electronic π -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current–voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur–gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current–voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical π -systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current–voltage characteristics, similar to the phenomena in a semiconductor diode. PMID:15956208

  14. Molecular diodes in optical rectennas

    Science.gov (United States)

    Duché, David; Palanchoke, Ujwol; Terracciano, Luigi; Dang, Florian-Xuan; Patrone, Lionel; Le Rouzo, Judikael; Balaban, Téodore Silviu; Alfonso, Claude; Charai, Ahmed; Margeat, Olivier; Ackermann, Jorg; Gourgon, Cécile; Simon, Jean-Jacques; Escoubas, Ludovic

    2016-09-01

    The photo conversion efficiencies of the 1st and 2nd generat ion photovoltaic solar cells are limited by the physical phenomena involved during the photo-conversion processes. An upper limit around 30% has been predicted for a monojunction silicon solar cell. In this work, we study 3rd generation solar cells named rectenna which could direct ly convert visible and infrared light into DC current. The rectenna technology is at odds with the actual photovoltaic technologies, since it is not based on the use of semi-conducting materials. We study a rectenna architecture consist ing of plasmonic nano-antennas associated with rectifying self assembled molecular diodes. We first opt imized the geometry of plasmonic nano-antennas using an FDTD method. The optimal antennas are then realized using a nano-imprint process and associated with self assembled molecular diodes in 11- ferrocenyl-undecanethiol. Finally, The I(V) characterist ics in darkness of the rectennas has been carried out using an STM. The molecular diodes exhibit averaged rect ification ratios of 5.

  15. High average power diode pumped solid state lasers for CALIOPE

    International Nuclear Information System (INIS)

    Comaskey, B.; Halpin, J.; Moran, B.

    1994-07-01

    Diode pumping of solid state media offers the opportunity for very low maintenance, high efficiency, and compact laser systems. For remote sensing, such lasers may be used to pump tunable non-linear sources, or if tunable themselves, act directly or through harmonic crystals as the probe. The needs of long range remote sensing missions require laser performance in the several watts to kilowatts range. At these power performance levels, more advanced thermal management technologies are required for the diode pumps. The solid state laser design must now address a variety of issues arising from the thermal loads, including fracture limits, induced lensing and aberrations, induced birefringence, and laser cavity optical component performance degradation with average power loading. In order to highlight the design trade-offs involved in addressing the above issues, a variety of existing average power laser systems are briefly described. Included are two systems based on Spectra Diode Laboratory's water impingement cooled diode packages: a two times diffraction limited, 200 watt average power, 200 Hz multi-rod laser/amplifier by Fibertek, and TRW's 100 watt, 100 Hz, phase conjugated amplifier. The authors also present two laser systems built at Lawrence Livermore National Laboratory (LLNL) based on their more aggressive diode bar cooling package, which uses microchannel cooler technology capable of 100% duty factor operation. They then present the design of LLNL's first generation OPO pump laser for remote sensing. This system is specified to run at 100 Hz, 20 nsec pulses each with 300 mJ, less than two times diffraction limited, and with a stable single longitudinal mode. The performance of the first testbed version will be presented. The authors conclude with directions their group is pursuing to advance average power lasers. This includes average power electro-optics, low heat load lasing media, and heat capacity lasers

  16. Power MOSFET-diode-based limiter for high-frequency ultrasound systems.

    Science.gov (United States)

    Choi, Hojong; Kim, Min Gon; Cummins, Thomas M; Hwang, Jae Youn; Shung, K Kirk

    2014-10-01

    The purpose of the limiter circuits used in the ultrasound imaging systems is to pass low-voltage echo signals generated by ultrasonic transducers while preventing high-voltage short pulses transmitted by pulsers from damaging front-end circuits. Resistor-diode-based limiters (a 50 Ω resistor with a single cross-coupled diode pair) have been widely used in pulse-echo measurement and imaging system applications due to their low cost and simple architecture. However, resistor-diode-based limiters may not be suited for high-frequency ultrasound transducer applications since they produce large signal conduction losses at higher frequencies. Therefore, we propose a new limiter architecture utilizing power MOSFETs, which we call a power MOSFET-diode-based limiter. The performance of a power MOSFET-diode-based limiter was evaluated with respect to insertion loss (IL), total harmonic distortion (THD), and response time (RT). We compared these results with those of three other conventional limiter designs and showed that the power MOSFET-diode-based limiter offers the lowest IL (-1.33 dB) and fastest RT (0.10 µs) with the lowest suppressed output voltage (3.47 Vp-p) among all the limiters at 70 MHz. A pulse-echo test was performed to determine how the new limiter affected the sensitivity and bandwidth of the transducer. We found that the sensitivity and bandwidth of the transducer were 130% and 129% greater, respectively, when combined with the new power MOSFET-diode-based limiter versus the resistor-diode-based limiter. Therefore, these results demonstrate that the power MOSFET-diode-based limiter is capable of producing lower signal attenuation than the three conventional limiter designs at higher frequency operation. © The Author(s) 2014.

  17. Improving Lifetime of Quasi-CW Laser Diode Arrays for Pumping 2-Micron Solid State Lasers

    Science.gov (United States)

    Amzajerdian, Farzin; Meadows, Byron L.; Baker, Nathaniel R.; Barnes, Bruce W.; Singh, Upendra N.; Kavaya, Michael J.

    2007-01-01

    Operating high power laser diode arrays in long pulse regime of about 1 msec, which is required for pumping 2-micron thulium and holmium-based lasers, greatly limits their useful lifetime. This paper describes performance of laser diode arrays operating in long pulse mode and presents experimental data on the active region temperature and pulse-to-pulse thermal cycling that are the primary cause of their premature failure and rapid degradation. This paper will then offer a viable approach for determining the optimum design and operational parameters leading to the maximum attainable lifetime.

  18. Iodine-stabilized single-frequency green InGaN diode laser.

    Science.gov (United States)

    Chen, Yi-Hsi; Lin, Wei-Chen; Shy, Jow-Tsong; Chui, Hsiang-Chen

    2018-01-01

    A 520-nm InGaN diode laser can emit a milliwatt-level, single-frequency laser beam when the applied current slightly exceeds the lasing threshold. The laser frequency was less sensitive to diode temperature and could be finely tuned by adjusting the applied current. Laser frequency was stabilized onto a hyperfine component in an iodine transition through the saturated absorption spectroscopy. The uncertainty of frequency stabilization was approximately 8×10 -9 at a 10-s integration time. This compact laser system can replace the conventional green diode-pumped solid-state laser and applied as a frequency reference. A single longitudinal mode operational region with diode temperature, current, and output power was investigated.

  19. Advancement of High Power Quasi-CW Laser Diode Arrays For Space-based Laser Instruments

    Science.gov (United States)

    Amzajerdian, Farzin; Meadows, Byron L.; Baker, nathaniel R.; Baggott, Renee S.; Singh, Upendra N.; Kavaya, Michael J.

    2004-01-01

    Space-based laser and lidar instruments play an important role in NASA s plans for meeting its objectives in both Earth Science and Space Exploration areas. Almost all the lidar instrument concepts being considered by NASA scientist utilize moderate to high power diode-pumped solid state lasers as their transmitter source. Perhaps the most critical component of any solid state laser system is its pump laser diode array which essentially dictates instrument efficiency, reliability and lifetime. For this reason, premature failures and rapid degradation of high power laser diode arrays that have been experienced by laser system designers are of major concern to NASA. This work addresses these reliability and lifetime issues by attempting to eliminate the causes of failures and developing methods for screening laser diode arrays and qualifying them for operation in space.

  20. Electromagnetic particle-in-cell simulations of Applied-B proton diodes

    International Nuclear Information System (INIS)

    Slutz, S.A.; Seidel, D.B.; Coats, R.S.

    1986-01-01

    Fully electromagnetic particle-in-cell simulations of Applied-B ion diodes have been performed using the magic code. These calculations indicate that Applied-B diodes can be nearly 100% efficient. Furthermore, the simulations exhibit an impedance relaxation phenomenon due to the buildup of electron space charge near the anode which causes a time-dependent enhancement of the ion emission above the Child--Langmuir value. This phenomenon may at least partially explain the rapidly decreasing impedance that has been observed in Applied-B ion diode experiments. The results of our numerical simulations will be compared to experimental data on Applied-B ion diodes and to analytic theories of their operation

  1. Experiments on high-power ion beam generation in self-insulated diodes

    International Nuclear Information System (INIS)

    Bystritskii, V.M.; Glyshko, Yu.A.; Sinerbrjukhov, A.A.; Kharlov, A.V.

    1991-01-01

    Experimental results are given on high-power ion beams (HPIB) generation in a vacuum spherical focusing diode with self-magnetic insulation, obtained from the nanosecond accelerator PARUS with 0.2-TW power and 60-ns pulse duration for a matched load. When the passive plasma source of the ions was used, the efficiency of the HPIB generation was measured to be as high as 20% for 700-kV diode voltage and 10-kA/cm 2 beam density in the focal plane. The application of a coaxial plasma opening switch (POS) prior to the diode resulted in a factor-of-1.8 increase in the diode power in comparison with a match operation in the absence of a POS. (author)

  2. Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

    Science.gov (United States)

    Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

    2018-04-01

    The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

  3. Electromagnetic wave analogue of electronic diode

    OpenAIRE

    Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...

  4. Thermometric characteristics of silicon semiconductor diodes

    International Nuclear Information System (INIS)

    Bezverkhnyaya, N.S.; Vasil'ev, L.M.; Dmitrevskij, Yu.P.; Mel'nik, Yu.M.

    1975-01-01

    To substantiate the feasibility of using silicon diodes made by the Soviet industry as detectors of temperature in the 15 - 300 K range, 25 different types of silicon diodes have been investigated. The results obtained for the thermometric characteristics of the diodes are presented in tabular form. It is shown that a stability of readings of up to 0.05 deg can be obtained [ru

  5. Laser diode technology for coherent communications

    Science.gov (United States)

    Channin, D. J.; Palfrey, S. L.; Toda, M.

    1989-01-01

    The effect of diode laser characteristics on the overall performance capabilities of coherent communication systems is discussed. In particular, attention is given to optical performance issues for diode lasers in coherent systems, measurements of key performance parameters, and optical requirements for coherent single-channel and multichannel communication systems. The discussion also covers limitations imposed by diode laser optical performance on multichannel system capabilities and implications for future developments.

  6. Thermic diode performance characteristics and design manual

    Science.gov (United States)

    Bernard, D. E.; Buckley, S.

    1979-01-01

    Thermic diode solar panels are a passive method of space and hot water heating using the thermosyphon principle. Simplified methods of sizing and performing economic analyses of solar heating systems had until now been limited to passive systems. A mathematical model of the thermic diode including its high level of stratification has been constructed allowing its performance characteristics to be studied. Further analysis resulted in a thermic diode design manual based on the f-chart method.

  7. 0.52eV Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    International Nuclear Information System (INIS)

    MW Dashiell; JF Beausang; G Nichols; DM Depoy; LR Danielson; H Ehsani; KD Rahner; J Azarkevich; P Talamo; E Brown; S Burger; P Fourspring; W Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Marinelli; D Donetski; S Anikeev; G Belenky; S Luryi; DR Taylor; J Hazel

    2004-01-01

    Thermophotovoltaic (TPV) diodes fabricated from 0.52eV lattice-matched InGaAsSb alloys are grown by Metal Organic Vapor Phase Epitaxy (MOVPE) on GaSb substrates. 4cm 2 multi-chip diode modules with front-surface spectral filters were tested in a vacuum cavity and attained measured efficiency and power density of 19% and 0.58 W/cm 2 respectively at operating at temperatures of T radiator = 950 C and T diode = 27 C. Device modeling and minority carrier lifetime measurements of double heterostructure lifetime specimens indicate that diode conversion efficiency is limited predominantly by interface recombination and photon energy loss to the GaSb substrate and back ohmic contact. Recent improvements to the diode include lattice-matched p-type AlGaAsSb passivating layers with interface recombination velocities less than 100 cm/s and new processing techniques enabling thinned substrates and back surface reflectors. Modeling predictions of these improvements to the diode architecture indicate that conversion efficiencies from 27-30% and ∼0.85 W/cm 2 could be attained under the above operating temperatures

  8. Focusing experiments with light ion diodes

    International Nuclear Information System (INIS)

    Johnson, D.L.

    1978-01-01

    A review of recent experimental and theoretical work at Sandia Laboratories on magnetically insulated single stage ion diodes for inertial confinement fusion experiments is presented. The production, focusing, and numerical simulation of a 0.5 TW annular proton beam using the Proto I dual transmission line generator is described. The modular magnetically insulated ion diode for the Hydra generator is also described along with recent experimental results. A brief description of how an array of modular diodes similar to the Hydra magnetically insulated diode could be used on the EBFA I generator for breakeven fusion experiments is presented

  9. Memory Applications Using Resonant Tunneling Diodes

    Science.gov (United States)

    Shieh, Ming-Huei

    Resonant tunneling diodes (RTDs) producing unique folding current-voltage (I-V) characteristics have attracted considerable research attention due to their promising application in signal processing and multi-valued logic. The negative differential resistance of RTDs renders the operating points self-latching and stable. We have proposed a multiple -dimensional multiple-state RTD-based static random-access memory (SRAM) cell in which the number of stable states can significantly be increased to (N + 1)^ m or more for m number of N-peak RTDs connected in series. The proposed cells take advantage of the hysteresis and folding I-V characteristics of RTD. Several cell designs are presented and evaluated. A two-dimensional nine-state memory cell has been implemented and demonstrated by a breadboard circuit using two 2-peak RTDs. The hysteresis phenomenon in a series of RTDs is also further analyzed. The switch model provided in SPICE 3 can be utilized to simulate the hysteretic I-V characteristics of RTDs. A simple macro-circuit is described to model the hysteretic I-V characteristic of RTD for circuit simulation. A new scheme for storing word-wide multiple-bit information very efficiently in a single memory cell using RTDs is proposed. An efficient and inexpensive periphery circuit to read from and write into the cell is also described. Simulation results on the design of a 3-bit memory cell scheme using one-peak RTDs are also presented. Finally, a binary transistor-less memory cell which is only composed of a pair of RTDs and an ordinary rectifier diode is presented and investigated. A simple means for reading and writing information from or into the memory cell is also discussed.

  10. Progress in semiconductor laser diodes: SPIE volume 723

    International Nuclear Information System (INIS)

    Eichen, E.

    1987-01-01

    This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

  11. Charge Transport in 2D DNA Tunnel Junction Diodes

    KAUST Repository

    Yoon, Minho

    2017-11-06

    Recently, deoxyribonucleic acid (DNA) is studied for electronics due to its intrinsic benefits such as its natural plenitude, biodegradability, biofunctionality, and low-cost. However, its applications are limited to passive components because of inherent insulating properties. In this report, a metal-insulator-metal tunnel diode with Au/DNA/NiOx junctions is presented. Through the self-aligning process of DNA molecules, a 2D DNA nanosheet is synthesized and used as a tunneling barrier, and semitransparent conducting oxide (NiOx ) is applied as a top electrode for resolving metal penetration issues. This molecular device successfully operates as a nonresonant tunneling diode, and temperature-variable current-voltage analysis proves that Fowler-Nordheim tunneling is a dominant conduction mechanism at the junctions. DNA-based tunneling devices appear to be promising prototypes for nanoelectronics using biomolecules.

  12. Diode laser for excisional biopsy of peripheral ossifying fibroma

    Directory of Open Access Journals (Sweden)

    Kirti Chawla

    2014-01-01

    Full Text Available Peripheral Ossifying Fibroma is one of the commonest occurring reactive lesions on gingiva. It is associated with local irritational factors and often interferes with speech, mastication and maintenance of oral hygiene, in addition to being aesthetically unpleasant. It is usually treated with surgical excision using scalpel and removal of irritational factors, often resulting in mucogingival defect. Other modalities such as radiosurgery and electrocautery have also been used for its management, but they cause changes in microarchitecture of biopsy specimen, altering the histologic picture for true diagnosis. We are presenting a case of excisional biopsy of this lesion in an adult female using a diode laser with excellent post-operative results, without affecting microarchitecture of biopsy specimen. The patient is being followed for last 1 year and no sign of recurrence has been found. A diode laser may offer a good alternative modality for management of such cases.

  13. High brightness diode-pumped organic solid-state laser

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Zhuang; Mhibik, Oussama; Nafa, Malik; Chénais, Sébastien; Forget, Sébastien, E-mail: sebastien.forget@univ-paris13.fr [Université Paris 13, Sorbonne Paris Cité, Laboratoire de Physique des Lasers, F-93430, Villetaneuse (France); CNRS, UMR 7538, LPL, F-93430, Villetaneuse (France)

    2015-02-02

    High-power, diffraction-limited organic solid-state laser operation has been achieved in a vertical external cavity surface-emitting organic laser (VECSOL), pumped by a low-cost compact blue laser diode. The diode-pumped VECSOLs were demonstrated with various dyes in a polymer matrix, leading to laser emissions from 540 nm to 660 nm. Optimization of both the pump pulse duration and output coupling leads to a pump slope efficiency of 11% for a DCM based VECSOLs. We report output pulse energy up to 280 nJ with 100 ns long pump pulses, leading to a peak power of 3.5 W in a circularly symmetric, diffraction-limited beam.

  14. Charge Transport in 2D DNA Tunnel Junction Diodes

    KAUST Repository

    Yoon, Minho; Min, Sung-Wook; Dugasani, Sreekantha Reddy; Lee, Yong Uk; Oh, Min Suk; Anthopoulos, Thomas D.; Park, Sung Ha; Im, Seongil

    2017-01-01

    Recently, deoxyribonucleic acid (DNA) is studied for electronics due to its intrinsic benefits such as its natural plenitude, biodegradability, biofunctionality, and low-cost. However, its applications are limited to passive components because of inherent insulating properties. In this report, a metal-insulator-metal tunnel diode with Au/DNA/NiOx junctions is presented. Through the self-aligning process of DNA molecules, a 2D DNA nanosheet is synthesized and used as a tunneling barrier, and semitransparent conducting oxide (NiOx ) is applied as a top electrode for resolving metal penetration issues. This molecular device successfully operates as a nonresonant tunneling diode, and temperature-variable current-voltage analysis proves that Fowler-Nordheim tunneling is a dominant conduction mechanism at the junctions. DNA-based tunneling devices appear to be promising prototypes for nanoelectronics using biomolecules.

  15. Five-level Z-source diode-clamped inverter

    DEFF Research Database (Denmark)

    Gao, F.; Loh, Poh Chiang; Blaabjerg, Frede

    2010-01-01

    This study proposes a five-level Z-source diode-clamped inverter designed with two intermediate Z-source networks connected between the dc input sources and rear-end inverter circuitry. By partially shorting the Z-source networks, new operating states not previously reported for two-level Z......-source inverter are introduced here for operating the proposed inverter with voltage buck–boost energy conversion ability and five-level phase voltage switching. These characteristic features are in fact always ensured at the inverter terminal output by simply adopting a properly designed carrier modulation...

  16. Highly-reliable laser diodes and modules for spaceborne applications

    Science.gov (United States)

    Deichsel, E.

    2017-11-01

    Laser applications become more and more interesting in contemporary missions such as earth observations or optical communication in space. One of these applications is light detection and ranging (LIDAR), which comprises huge scientific potential in future missions. The Nd:YAG solid-state laser of such a LIDAR system is optically pumped using 808nm emitting pump sources based on semiconductor laser-diodes in quasi-continuous wave (qcw) operation. Therefore reliable and efficient laser diodes with increased output powers are an important requirement for a spaceborne LIDAR-system. In the past, many tests were performed regarding the performance and life-time of such laser-diodes. There were also studies for spaceborne applications, but a test with long operation times at high powers and statistical relevance is pending. Other applications, such as science packages (e.g. Raman-spectroscopy) on planetary rovers require also reliable high-power light sources. Typically fiber-coupled laser diode modules are used for such applications. Besides high reliability and life-time, designs compatible to the harsh environmental conditions must be taken in account. Mechanical loads, such as shock or strong vibration are expected due to take-off or landing procedures. Many temperature cycles with high change rates and differences must be taken in account due to sun-shadow effects in planetary orbits. Cosmic radiation has strong impact on optical components and must also be taken in account. Last, a hermetic sealing must be considered, since vacuum can have disadvantageous effects on optoelectronics components.

  17. Experimental Study of The Physical Properties of The Laser Diode (AlGaAs/GaAs) (Arsenic Gallium Aluminum) To Use as a Pumping Source of Laser Nd:YAG

    International Nuclear Information System (INIS)

    Dayoub, N.; Altwel, E.

    2009-01-01

    The research includes an experimental study of the physical properties of the laser diode (AlGaAs/GaAs). We have made a detailed display of the structure of diode and mechanism of its operation, as well as its convenience as a pumping source for Solid-state laser Nd:YAG. Then we studied the changes of potential difference (expressing the capacity of laser diode) by the dependence of diode temperature, for variant intensity of the injection current, and the changes of potential by dependence of the injection current; and finally, we made a study of the capacity of laser diode output by dependence of the injection current. (author)

  18. Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV

    International Nuclear Information System (INIS)

    Etchessahar, Bertrand; Bicrel, Béatrice; Cassany, Bruno; Desanlis, Thierry; Voisin, Luc; Hébert, David; Bernigaud, Virgile; Magnin, Laurent; Nicolas, Rémi; Poulet, Frédéric; Tailleur, Yaël; Caron, Michel; Cartier, Frédéric; Cartier, Stéphanie; Hourdin, Laurent; Rosol, Rodolphe; Toury, Martial; Delbos, Christophe; Garrigues, Alain; Soleilhavoup, Isabelle

    2012-01-01

    The negative polarity rod pinch diode (NPRPD) is a potential millimeter spot size radiography source for high voltage generators (4 to 8 MV) [Cooperstein et al., “Considerations of rod-pinch diode operation in negative polarity for radiography,” in Proceedings of the 14th IEEE Pulsed Power Conference, 2003, pp. 975–978]. The NPRPD consists of a small diameter (few mm) cylindrical anode extending from the front end of the vacuum cell through a thin annular cathode, held by a central conductor. The polarity has been inverted when compared to the original rod pinch diode [Cooperstein et al., “Theoretical modeling and experimental characterization of a rod-pinch diode,” Phys. Plasmas 8(10), 4618–4636 (2001)] in order to take advantage from the maximal x-ray emission toward the anode holder at such a voltage [Swanekamp et al., “Evaluation of self-magnetically pinched diodes up to 10 MV as high resolution flash X-ray sources,” IEEE Trans. Plasma Sci. 32(5), 2004–2016 (2004). We have studied this diode at 4.5 MV, driven by the ASTERIX generator [Raboisson et al., “ASTERIX, a high intensity X-ray generator,” in Proceedings of the 7th IEEE Pulsed Power Conference, 1989, pp. 567–570.]. This generator, made up of a capacitor bank and a Blumlein line, was initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode has been modified in order to set up flash a radiographic diode [Etchessahar et al., “Negative polarity rod pinch diode experiments on the ASTERIX generator,” in Conference Records–Abstracts, 37th IEEE International Conference on Plasma Science, 2010]. The experiments and numerical simulations presented here allowed the observation and analysis of various physical phenomena associated with the diode operation. Also, the influence of several experimental parameters, such as cathode and anode diameters, materials and surface states, was examined. In order to achieve the most

  19. Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV

    Energy Technology Data Exchange (ETDEWEB)

    Etchessahar, Bertrand; Bicrel, Beatrice; Cassany, Bruno; Desanlis, Thierry; Voisin, Luc; Hebert, David [CEA, DAM, CESTA, F-33114 Le Barp (France); Bernigaud, Virgile; Magnin, Laurent; Nicolas, Remi; Poulet, Frederic; Tailleur, Yaeel [CEA, DAM, VALDUC, F-21120 Is sur Tille (France); Caron, Michel; Cartier, Frederic; Cartier, Stephanie; Hourdin, Laurent; Rosol, Rodolphe; Toury, Martial; Delbos, Christophe; Garrigues, Alain; Soleilhavoup, Isabelle [CEA, DAM, GRAMAT, F-46500 Gramat (France); and others

    2012-09-15

    The negative polarity rod pinch diode (NPRPD) is a potential millimeter spot size radiography source for high voltage generators (4 to 8 MV) [Cooperstein et al., 'Considerations of rod-pinch diode operation in negative polarity for radiography,' in Proceedings of the 14th IEEE Pulsed Power Conference, 2003, pp. 975-978]. The NPRPD consists of a small diameter (few mm) cylindrical anode extending from the front end of the vacuum cell through a thin annular cathode, held by a central conductor. The polarity has been inverted when compared to the original rod pinch diode [Cooperstein et al., 'Theoretical modeling and experimental characterization of a rod-pinch diode,' Phys. Plasmas 8(10), 4618-4636 (2001)] in order to take advantage from the maximal x-ray emission toward the anode holder at such a voltage [Swanekamp et al., 'Evaluation of self-magnetically pinched diodes up to 10 MV as high resolution flash X-ray sources,' IEEE Trans. Plasma Sci. 32(5), 2004-2016 (2004). We have studied this diode at 4.5 MV, driven by the ASTERIX generator [Raboisson et al., 'ASTERIX, a high intensity X-ray generator,' in Proceedings of the 7th IEEE Pulsed Power Conference, 1989, pp. 567-570.]. This generator, made up of a capacitor bank and a Blumlein line, was initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode has been modified in order to set up flash a radiographic diode [Etchessahar et al., 'Negative polarity rod pinch diode experiments on the ASTERIX generator,' in Conference Records-Abstracts, 37th IEEE International Conference on Plasma Science, 2010]. The experiments and numerical simulations presented here allowed the observation and analysis of various physical phenomena associated with the diode operation. Also, the influence of several experimental parameters, such as cathode and anode diameters, materials and surface states, was examined. In order to

  20. Power ion beam production in a magnetic-insulated diode placed in a circuit with an inductive storage with a plasmoerosion circuit breaker

    International Nuclear Information System (INIS)

    Anan'in, P.S.; Karpov, V.B.; Krasik, Ya.E.; Paul', E.A.

    1991-01-01

    Consideration is given to results of experimental studies of modes of operation of plasma current breaker and magnetic insulated diode, placed parallel in a circuit with inductive storage and microsecond generator, as well as parameters of high-power ion beam, generated in gas-filled diode. Magnetic field of mirror configuration, which enabled to locate the gas-filled diode dose to breaking region was used for decrease of electrodynamic plasma transfer. It is shown that time delay (of the order of ten and more) of power maximum in gas-filled diode with respect to power maximum in plasma breaker is observed when using passive plasma source on anode

  1. Destructive Single-Event Effects in Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Campola, Michael J.; Wilcox, Edward P.; Phan, Anthony M.; Label, Kenneth A.

    2017-01-01

    In this work, we discuss the observed single-event effects in a variety of types of diodes. In addition, we conduct failure analysis on several Schottky diodes that were heavy-ion irradiated. High- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images are used to identify and describe the failure locations.

  2. outcome of diode laser cyclophotocoagulation in neovascular ...

    African Journals Online (AJOL)

    Duke

    including, ruby, ND:YAG, argon, krypton and, more recently, trans scleral cyclophotocoagulation with the diode laser, which has been shown to be more effective with less side effects than the others. The diode laser, 810nm, has. 4,5 greater melanin absorption compared to other lasers. Of the various cyclodestructive laser ...

  3. High-power pure blue laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Ohta, M.; Ohizumi, Y.; Hoshina, Y.; Tanaka, T.; Yabuki, Y.; Goto, S.; Ikeda, M. [Development Center, Sony Shiroishi Semiconductor Inc., Miyagi (Japan); Funato, K. [Materials Laboratories, Sony Corporation, Kanagawa (Japan); Tomiya, S. [Materials Analysis Laboratory, Sony Corporation, Kanagawa (Japan)

    2007-06-15

    We successfully developed high-power and long-lived pure blue laser diodes (LDs) having an emission wavelength of 440-450 nm. The pure-blue LDs were grown by metalorganic chemical vapor deposition (MOCVD) on GaN substrates. The dislocation density was successfully reduced to {proportional_to}10{sup 6} cm{sup -2} by optimizing the MOCVD growth conditions and the active layer structure. The vertical layer structure was designed to have an absorption loss of 4.9 cm{sup -1} and an internal quantum efficiency of 91%. We also reduced the operating current density to 6 kA/cm{sup 2} under 750 mW continuous-wave operation at 35 C by optimizing the stripe width to 12 {mu}m and the cavity length to 2000 {mu}m. The half lifetimes in constant current mode are estimated to be longer than 10000 h. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Electromagnetic wave analogue of an electronic diode

    International Nuclear Information System (INIS)

    Shadrivov, Ilya V; Powell, David A; Kivshar, Yuri S; Fedotov, Vassili A; Zheludev, Nikolay I

    2011-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of rotation of the polarization state and is also a key component in optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by an extraordinarily strong nonlinear wave propagation effect in the same way as the electronic diode function is provided by the nonlinear current characteristic of a semiconductor junction. The effect exploited in this new electromagnetic diode is an intensity-dependent polarization change in an artificial chiral metamolecule. This microwave effect exceeds a similar optical effect previously observed in natural crystals by more than 12 orders of magnitude and a direction-dependent transmission that differs by a factor of 65.

  5. Carbon nanotube Schottky diode: an atomic perspective

    International Nuclear Information System (INIS)

    Bai, P; Li, E; Kurniawan, O; Koh, W S; Lam, K T

    2008-01-01

    The electron transport properties of semiconducting carbon nanotube (SCNT) Schottky diodes are investigated with atomic models using density functional theory and the non-equilibrium Green's function method. We model the SCNT Schottky diode as a SCNT embedded in the metal electrode, which resembles the experimental set-up. Our study reveals that the rectification behaviour of the diode is mainly due to the asymmetric electron transmission function distribution in the conduction and valence bands and can be improved by changing metal-SCNT contact geometries. The threshold voltage of the diode depends on the electron Schottky barrier height which can be tuned by altering the diameter of the SCNT. Contrary to the traditional perception, the metal-SCNT contact region exhibits better conductivity than the other parts of the diode

  6. Tunable diode-pumped-LNA laser

    International Nuclear Information System (INIS)

    Cassimi, A.; Hardy, V.; Hamel, J.; Leduc, M.

    1987-01-01

    Diode-pumped crystals provided recently new compact laser devices. We report the first end pumping of a La x Nd 1-x MgAl 11 O 19 (LNA) crystal using a 200mW diode array (Spectra Diode Lab). We also report the first results obtained with a 1mW diode (SONY). This C.W. laser can be tuned from 1.048μm to 1.086μm. Without selective elements in the cavity, the laser emits around 1.054μm with a threshold of 24mW and a slope efficiency of 4.4% (output mirror of transmission T = 1%) when pumped by the diode array. With the selective elements, the threshold increases to 100mW and we obtain a power of 4mW for a pump power of 200mW

  7. Development of intense pulsed heavy ion beam diode using gas puff plasma gun as ion source

    International Nuclear Information System (INIS)

    Ito, H.; Higashiyama, M.; Takata, S.; Kitamura, I.; Masugata, K.

    2006-01-01

    A magnetically insulated ion diode with an active ion source of a gas puff plasma gun has been developed in order to generate a high-intensity pulsed heavy ion beam for the implantation process of semiconductors and the surface modification of materials. The nitrogen plasma produced by the plasma gun is injected into the acceleration gap of the diode with the external magnetic field system. The ion diode is operated at diode voltage approx. =200 kV, diode current approx. =2 kA and pulse duration approx. =150 ns. A new acceleration gap configuration for focusing ion beam has been designed in order to enhance the ion current density. The experimental results show that the ion current density is enhanced by a factor of 2 and the ion beam has the ion current density of 27 A/cm 2 . In addition, the coaxial type Marx generator with voltage 200 kV and current 15 kA has been developed and installed in the focus type ion diode. The ion beam of ion current density approx. =54 A/cm 2 is obtained. To produce metallic ion beams, an ion source by aluminum wire discharge has been developed and the aluminum plasma of ion current density ∼70 A/cm 2 is measured. (author)

  8. Simulation study of magnetically insulated power coupling to the applied-B ion diode

    International Nuclear Information System (INIS)

    Rosenthal, S.E.

    1992-01-01

    Power coupling to the applied-B ion diode from magnetically insulated transmission lines is simply described in terms of the voltage-current characteristics of both the diode and the transmission line. The accelerator load line intersects the composite characteristic at the operating voltage and current. Using 2-D PIC simulation, the authors have investigated how modification of either the ion diode or the magnetically insulated transmission line characteristic influences power coupling. Plasma prefill can modify the ion diode characteristic; a partially opened POS in the transmission line upstream of the ion diode is a possible cause of modification of the magnetically insulated transmission line characteristic. It can be useful to consider these two aspects of power coupling separately, but they are actually not independent. A good parameter to characterize the situation is the flow impedance, given by V/(I a 2 I c 2 ) 1/2 . V is the line voltage; I a and I c are the conduction currents flowing through the anode and cathode, respectively. The flow impedance covers a range from one half the vacuum impedance, for saturated magnetically insulated flow, to just below the vacuum impedance, for highly unsaturated flow. As the term ''flow impedance'' implies, low flow impedance coincides with greater electron flow while high flow impedance coincides with less electron flow. The flow impedance is sensitive to both the transmission line and the diode impedance. They show how the two are related, using the flow impedance as a parameter

  9. Shot reproducibility of the self-magnetic-pinch diode at 4.5 MV

    Directory of Open Access Journals (Sweden)

    Nichelle Bennett

    2014-05-01

    Full Text Available In experiments conducted at Sandia National Laboratories’ RITS-6 accelerator, the self-magnetic-pinch diode exhibits significant shot-to-shot variability. Specifically, for identical hardware operated at the same voltage, some shots exhibit a catastrophic drop in diode impedance. A study is underway to identify sources of shot-to-shot variations which correlate with diode impedance collapse. The scope of this report is limited to data collected at 4.5-MV peak voltage and sources of variability which occur away from the diode, such as sheath electron emission and trajectories, variations in pulsed power, load and transmission line alignment, and different field shapers. We find no changes in the transmission line hardware, alignment, or hardware preparation methods which correlate with impedance collapse. However, in classifying good versus poor shots, we find that there is not a continuous spectrum of diode impedance behavior but that the good and poor shots can be grouped into two distinct impedance profiles. In poor shots, the sheath current in the load region falls from 16%–30% of the total current to less than 10%. This result will form the basis of a follow-up study focusing on the variability resulting from diode physics.

  10. Investigations of shot reproducibility for the SMP diode at 4.5 MV.

    Energy Technology Data Exchange (ETDEWEB)

    Bennett, Nichelle [National Security Technologies, LLC, Las Vegas, NV (United States); Crain, Marlon D. [National Security Technologies, LLC, Las Vegas, NV (United States); Droemer, Darryl W. [National Security Technologies, LLC, Las Vegas, NV (United States); Gignac, Raymond Edward [National Security Technologies, LLC, Las Vegas, NV (United States); Lare, Gregory A. [National Security Technologies, LLC, Las Vegas, NV (United States); Molina, Isidro [National Security Technologies, LLC, Las Vegas, NV (United States); Obregon, Rafael [National Security Technologies, LLC, Las Vegas, NV (United States); Smith, Chase C. [National Security Technologies, LLC, Las Vegas, NV (United States); Wilkins, Frank Lee [National Security Technologies, LLC, Las Vegas, NV (United States); Welch, Dale Robert [Voss Scientific, LLC, Albuquerque, NM (United States); Cordova, Steve Ray; Gallegos, M.; Johnston, Mark D.; Kiefer, Mark Linden; Leckbee, Joshua J.; Nielsen, Daniel Scott; Oliver, Bryan Velten; Renk, Timothy Jerome; Romero, Tobias; Webb, Timothy Jay; Ziska, Derek Raymond

    2013-11-01

    In experiments conducted on the RITS-6 accelerator, the SMP diode exhibits sig- ni cant shot-to-shot variability. Speci cally, for identical hardware operated at the same voltage, some shots exhibit a catastrophic drop in diode impedance. A study is underway to identify sources of shot-to-shot variations which correlate with diode impedance collapse. To remove knob emission as a source, only data from a shot series conducted with a 4.5-MV peak voltage are considered. The scope of this report is limited to sources of variability which occur away from the diode, such as power ow emission and trajectory changes, variations in pulsed power, dustbin and transmission line alignment, and di erent knob shapes. We nd no changes in the transmission line hardware, alignment, or hardware preparation methods which correlate with impedance collapse. However, in classifying good versus poor shots, we nd that there is not a continuous spectrum of diode impedance behavior but that the good and poor shots can be grouped into two distinct impedance pro les. This result forms the basis of a follow-on study focusing on the variability resulting from diode physics. 3

  11. Zener Diode Compact Model Parameter Extraction Using Xyce-Dakota Optimization.

    Energy Technology Data Exchange (ETDEWEB)

    Buchheit, Thomas E. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Wilcox, Ian Zachary [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Sandoval, Andrew J [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Reza, Shahed [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2017-12-01

    This report presents a detailed process for compact model parameter extraction for DC circuit Zener diodes. Following the traditional approach of Zener diode parameter extraction, circuit model representation is defined and then used to capture the different operational regions of a real diode's electrical behavior. The circuit model contains 9 parameters represented by resistors and characteristic diodes as circuit model elements. The process of initial parameter extraction, the identification of parameter values for the circuit model elements, is presented in a way that isolates the dependencies between certain electrical parameters and highlights both the empirical nature of the extraction and portions of the real diode physical behavior which of the parameters are intended to represent. Optimization of the parameters, a necessary part of a robost parameter extraction process, is demonstrated using a 'Xyce-Dakota' workflow, discussed in more detail in the report. Among other realizations during this systematic approach of electrical model parameter extraction, non-physical solutions are possible and can be difficult to avoid because of the interdependencies between the different parameters. The process steps described are fairly general and can be leveraged for other types of semiconductor device model extractions. Also included in the report are recommendations for experiment setups for generating optimum dataset for model extraction and the Parameter Identification and Ranking Table (PIRT) for Zener diodes.

  12. Fluctuations of the peak current of tunnel diodes in multi-junction solar cells

    International Nuclear Information System (INIS)

    Jandieri, K; Baranovskii, S D; Stolz, W; Gebhard, F; Guter, W; Hermle, M; Bett, A W

    2009-01-01

    Interband tunnel diodes are widely used to electrically interconnect the individual subcells in multi-junction solar cells. Tunnel diodes have to operate at high current densities and low voltages, especially when used in concentrator solar cells. They represent one of the most critical elements of multi-junction solar cells and the fluctuations of the peak current in the diodes have an essential impact on the performance and reliability of the devices. Recently we have found that GaAs tunnel diodes exhibit extremely high peak currents that can be explained by resonant tunnelling through defects homogeneously distributed in the junction. Experiments evidence rather large fluctuations of the peak current in the diodes fabricated from the same wafer. It is a challenging task to clarify the reason for such large fluctuations in order to improve the performance of the multi-junction solar cells. In this work we show that the large fluctuations of the peak current in tunnel diodes can be caused by relatively small fluctuations of the dopant concentration. We also show that the fluctuations of the peak current become smaller for deeper energy levels of the defects responsible for the resonant tunnelling.

  13. Simulated electron affinity tuning in metal-insulator-metal (MIM) diodes

    Science.gov (United States)

    Mistry, Kissan; Yavuz, Mustafa; Musselman, Kevin P.

    2017-05-01

    Metal-insulator-metal diodes for rectification applications must exhibit high asymmetry, nonlinearity, and responsivity. Traditional methods of improving these figures of merit have consisted of increasing insulator thickness, adding multiple insulator layers, and utilizing a variety of metal contact combinations. However, these methods have come with the price of increasing the diode resistance and ultimately limiting the operating frequency to well below the terahertz regime. In this work, an Airy Function Transfer Matrix simulation method was used to observe the effect of tuning the electron affinity of the insulator as a technique to decrease the diode resistance. It was shown that a small increase in electron affinity can result in a resistance decrease in upwards of five orders of magnitude, corresponding to an increase in operating frequency on the same order. Electron affinity tuning has a minimal effect on the diode figures of merit, where asymmetry improves or remains unaffected and slight decreases in nonlinearity and responsivity are likely to be greatly outweighed by the improved operating frequency of the diode.

  14. Efficiency and stability of a phosphor-conversion white light source using a blue laser diode

    Directory of Open Access Journals (Sweden)

    G. Ledru

    2014-10-01

    Full Text Available A white light source using direct phosphor-conversion excited by a blue laser diode is presented. In this preliminary study we have investigated the influence of phosphor’s thickness and operating current of the laser diode over the (x, y chromaticity coordinates, Correlated Color Temperature (CCT and Color Rendering Index (CRI. The best values found were 4000 K and 94. A 40 lm/W luminous efficacy was achieved together with a CRI close to 90 for an operating current of 0.8 A. Those values, to the best of our knowledge, were not previously reported in the literature.

  15. Enhanced mixing characteristics of GaAs/3,4,9,10-perylenetetracarboxylic dianhydride Schottky diodes

    International Nuclear Information System (INIS)

    Ginev, G; Riedl, T; Parashkov, R; Johannes, H-H; Kowalsky, W

    2003-01-01

    The influences on the mixing properties of GaAs Schottky diodes containing an organic 3,4,9,10-perylenetetracarboxylic dianhydride layer were investigated. The frequency conversion ability of the devices was determined by considering the I-V characteristics and high frequency reflection parameters by using a mixing technique operated in the microwave range. The results show that an organic layer with 20 nm thickness enhances the diode conversion gain for mixing applications by 3 dB and lowers the device operating bias voltage by 0.1 V. This process is related to the specific properties of the organic semiconductor and resulting organic-inorganic interface

  16. Stopping atoms with diode lasers

    International Nuclear Information System (INIS)

    Watts, R.N.; Wieman, C.E.

    1986-01-01

    The use of light pressure to cool and stop neutral atoms has been an area of considerable interest recently. Cooled neutral atoms are needed for a variety of interesting experiments involving neutral atom traps and ultrahigh-resolution spectroscopy. Laser cooling of sodium has previously been demonstrated using elegant but quite elaborate apparatus. These techniques employed stabilized dye lasers and a variety of additional sophisticated hardware. The authors have demonstrated that a frequency chirp technique can be implemented using inexpensive diode lasers and simple electronics. In this technique the atoms in an atomic beam scatter resonant photons from a counterpropagating laser beam. The momentum transfer from the photons slows the atoms. The primary difficulty is that as the atoms slow their Doppler shift changes, and so they are no longer in resonance with the incident photons. In the frequency chirp technique this is solved by rapidly changing the laser frequency so that the atoms remain in resonance. To achieve the necessary frequency sweep with a dye laser one must use an extremely sophisticated high-speed electrooptic modulator. With a diode laser, however, the frequency can be smoothly and rapidly varied over many gigahertz simply by changing the injection current

  17. Study in vitro of dental enamel irradiated with a high power diode laser operating at 960 nm: morphological analysis of post-irradiation dental surface and thermal effect analysis in pulp chamber due to laser application; Estudo in vitro do esmalte dental irradiado com laser de diodo de alta potencia em 960 nm: analise morfologica da superficie dental pos-irradiada e analise do comportamento termico na camara pulpar devido a aplicacao laser

    Energy Technology Data Exchange (ETDEWEB)

    Quinto Junior, Jose

    2001-07-01

    Objectives: This study examines the structural and thermal modifications induced in dental enamel under dye assisted diode laser irradiation. The aim of this study is to verify if this laser-assisted treatment is capable to modify the enamel surface by causing fusion of the enamel surface layer. At the same time, the pulpal temperature rise must be kept low enough in order not to cause pulpar necrosis. To achieve this target, it is necessary to determine suitable laser parameters. As is known, fusion of the enamel surface followed by re-solidification produce a more acid resistant layer. This surface treatment is being researched as a new method for caries prevention. Method and Materials: A series of fourteen identically prepared enamel samples of human teeth were irradiated with a high power diode laser operating at 960 nm and using fiber delivery. Prior to irradiation, a fine layer of cromophorous ink was applied to the enamel surface. In the first part of the experiment the best parameter for pulse duration was determined. In the second part of the experimental phase the same energy density was used but with different repetition rates. During irradiation we monitored the temperature rise in the pulpal cavity. The morphology of the treated samples was analysed under SEM. Results: The morphology of the treated samples showed a homogeneously re-solidified enamel layer. The results of the temperature analysis showed a decrease of the pulpal temperature rise with decreasing repetition rate. Conclusion: With the diode laser it is possible to cause morphological alterations of the enamel surface, which is known to increase the enamel resistance against acid attack, and still maintain the temperature rise in the pulpar chamber below damage threshold. (author)

  18. Gamma and electron high dose dosimetry with rad-hard Si diodes

    International Nuclear Information System (INIS)

    Pascoalino, Kelly Cristina da Silva

    2014-01-01

    In this work the main dosimetric characteristics of rad-hard Float Zone (FZ) and magnetic Czochralski (MCz) diodes to electrons (1.5 MeV) and gamma ( 60 Co) radiation are evaluated. The dosimetric system proposed is based on electrical current measurements due to radiation interactions on the devices. The batch response uniformity was studied for the n-type FZ diodes irradiated with gamma rays. The coefficient of variation of the current measurement was about 1.25% at 5 kGy of accumulated dose. A sensitivity decrease with the increase of the accumulated dose (Total Ionizing Dose - TID) was observed for both FZ and MCz diodes. For gamma irradiation, these effect is more pronounced for n-type or smaller resistivity diodes. Two types of dosimetric probe were used on the electron irradiation procedures, one of them specially designed to avoid the deterioration of the electrical contacts and the diodes metallization. The sensitivity of the preirradiated FZ and MCz diodes fell about 10% and 40%, respectively, during electron irradiation at 1.25 MGy of accumulated dose. The effect of electron radiation damage on the electrical properties of the diodes was studied by the means of leakage current and capacitance measurements as a function of bias voltage. The leakage current increases with the accumulated dose but does not contributes significantly to the current signal, since the diodes are operated in photovoltaic mode, without bias voltage. For the MCz diode no change in the full depletion voltage was observed, which indicates its higher tolerance to radiation-induced damage, as expected. During electron irradiation the temperature increases and in order to determine its influence for the current signals, the leakage current values were extrapolated up to 35 °C. The contribution does not exceed 0.1% for FZ and MCz diodes. The effect of the radiation type, electrons or gamma rays, on the pre dose procedures was analyzed for the FZ n-type device and was observed that the

  19. Perovskite Materials for Light-Emitting Diodes and Lasers.

    Science.gov (United States)

    Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

    2016-08-01

    Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  20. Light Converting Inorganic Phosphors for White Light-Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Chiao-Wen Yeh

    2010-03-01

    Full Text Available White light-emitting diodes (WLEDs have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV LEDs and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED or polymer light-emitting diode (PLED, have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450-480 nm and nUV (380-400 nm LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+ is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

  1. Light Converting Inorganic Phosphors for White Light-Emitting Diodes

    Science.gov (United States)

    Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

    2010-01-01

    White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450−480 nm) and nUV (380−400 nm) LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+) is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

  2. Room-temperature-processed flexible n-InGaZnO/p-Cu2O heterojunction diodes and high-frequency diode rectifiers

    International Nuclear Information System (INIS)

    Chen, Wei-Chung; Hsu, Po-Ching; Chien, Chih-Wei; Chang, Kuei-Ming; Hsu, Chao-Jui; Chang, Ching-Hsiang; Lee, Wei-Kai; Chou, Wen-Fang; Wu, Chung-Chih; Hsieh, Hsing-Hung

    2014-01-01

    In this work, we report successful implementation of room-temperature-processed flexible n-InGaZnO/p-Cu 2 O heterojunction diodes on polyethylene naphthalate (PEN) plastic substrates using the sputtering technique. Using n-type InGaZnO and p-type Cu 2 O films deposited by sputtering at room temperature, flexible n-InGaZnO/p-Cu 2 O heterojunction diodes were successfully fabricated on PEN plastic substrates. The didoes on PEN substrates exhibited a low apparent turn-on voltage of 0.44 V, a high rectification ratio of up to 3.4 × 10 4 at ±1.2 V, a high forward current of 1 A cm −2 around 1 V and a decent ideality factor of 1.4, similar to the characteristics of n-InGaZnO/p-Cu 2 O diodes fabricated on glass substrates. The characterization of the frequency response of the room-temperature-processed flexible n-InGaZnO/p-Cu 2 O heterojunction diode rectifiers indicated that they are capable of high-frequency operation up to 27 MHz, sufficient for high-frequency (13.56 MHz) applications. Preliminary bending tests on diode characteristics and rectifier frequency responses indicate their promise for applications in flexible electronics. (paper)

  3. Experimental study of self magnetic pinch diode as flash radiography source at 4 megavolt

    International Nuclear Information System (INIS)

    Etchessahar, Bertrand; Bicrel, Béatrice; Cassany, Bruno; Desanlis, Thierry; Voisin, Luc; Maisonny, Rémi; Toury, Martial; Hourdin, Laurent; Cartier, Frédéric; Cartier, Stéphanie; D'Almeida, Thierry; Delbos, Christophe; Garrigues, Alain; Plouhinec, Damien; Ritter, Sandra; Sol, David; Zucchini, Frédéric; Caron, Michel

    2013-01-01

    The Self Magnetic Pinch (SMP) diode is a potential high-brightness X-ray source for high voltage generators (2–10 MV) that has shown good reliability for flash radiography applications [D. D. Hinchelwood et al., “High power self-pinch diode experiments for radiographic applications” IEEE Trans. Plasma Sci. 35(3), 565–572 (2007)]. We have studied this diode at about 4 MV, driven by the ASTERIX generator operated at the CEA/GRAMAT [G. Raboisson et al., “ASTERIX, a high intensity X-ray generator,” in Proceedings of the 7th IEEE Pulsed Power Conference (1989), pp. 567–570]. This generator, made up of a capacitor bank and a Blumlein line, was initially designed to test the behavior of electronic devices under irradiation. In our experiments, the vacuum diode is modified in order to set up flash radiographic diodes. A previous set of radiographic experiments was carried out on ASTERIX with a Negative Polarity Rod Pinch (NPRP) diode [B. Etchessahar et al., “Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV,” Phys. Plasmas 19(9), 093104 (2012)]. The SMP diode which is examined in the present study provides an alternative operating point on the same generator and a different radiographic performance: 142 ± 11 rad at 1 m dose (Al) for a 3.46 ± 0.42 mm spot size (1.4× FWHM of the LSF). This performance is obtained in a reproducible and robust nominal configuration. However, several parametric variations were also tested, such as cathode diameter and anode/cathode gap. They showed that an even better performance is accessible after optimization, in particular, a smaller spot size (<3 mm). Numbers of electrical, optical, and X-ray diagnostics have been implemented in order to gain more insight in the diode physics and to optimize it further. For the first time in France, visible and laser imaging of the SMP diode has been realized, from a radial point of view, thus, providing key information on the electrode

  4. Diode Laser Velocity Measurements by Modulated Filtered Rayleigh Scattering

    Science.gov (United States)

    Mach, J. J.; Varghese, P. L.; Jagodzinski, J. J.

    1999-01-01

    The ability of solid-state lasers to be tuned in operating frequency at MHz rates by input current modulation, while maintaining a relatively narrow line-width, has made them useful for spectroscopic measurements. Their other advantages include low cost, reliability, durability, compact size, and modest power requirements, making them a good choice for a laser source in micro-gravity experiments in drop-towers and in flight. For their size, they are also very bright. In a filtered Rayleigh scattering (FRS) experiment, a diode laser can be used to scan across an atomic or molecular absorption line, generating large changes in transmission at the resonances for very small changes in frequency. The hyperfine structure components of atomic lines of alkali metal vapors are closely spaced and very strong, which makes such atomic filters excellent candidates for sensitive Doppler shift detection and therefore for high-resolution velocimetry. In the work we describe here we use a Rubidium vapor filter, and work with the strong D(sub 2) transitions at 780 nm that are conveniently accessed by near infrared diode lasers. The low power output of infrared laser diodes is their primary drawback relative to other laser systems commonly used for velocimetry. However, the capability to modulate the laser frequency rapidly and continuously helps mitigate this. Using modulation spectroscopy and a heterodyne detection scheme with a lock-in amplifier, one can extract sub-microvolt signals occurring at a specific frequency from a background that is orders of magnitude stronger. The diode laser modulation is simply achieved by adding a small current modulation to the laser bias current. It may also be swept repetitively in wavelength using an additional lower frequency current ramp.

  5. Diode lasers: From laboratory to industry

    Science.gov (United States)

    Nasim, Hira; Jamil, Yasir

    2014-03-01

    The invention of first laser in 1960 triggered the discovery of several new families of lasers. A rich interplay of different lasing materials resulted in a far better understanding of the phenomena particularly linked with atomic and molecular spectroscopy. Diode lasers have gone through tremendous developments on the forefront of applied physics that have shown novel ways to the researchers. Some interesting attributes of the diode lasers like cost effectiveness, miniature size, high reliability and relative simplicity of use make them good candidates for utilization in various practical applications. Diode lasers are being used by a variety of professionals and in several spectroscopic techniques covering many areas of pure and applied sciences. Diode lasers have revolutionized many fields like optical communication industry, medical science, trace gas monitoring, studies related to biology, analytical chemistry including elemental analysis, war fare studies etc. In this paper the diode laser based technologies and measurement techniques ranging from laboratory research to automated field and industry have been reviewed. The application specific developments of diode lasers and various methods of their utilization particularly during the last decade are discussed comprehensively. A detailed snapshot of the current state of the art diode laser applications is given along with a detailed discussion on the upcoming challenges.

  6. A single-molecule diode

    Science.gov (United States)

    Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B.; Mayor, Marcel

    2005-06-01

    We have designed and synthesized a molecular rod that consists of two weakly coupled electronic π -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current-voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur-gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current-voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical π -systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current-voltage characteristics, similar to the phenomena in a semiconductor diode. Author contributions: F.E., H.B.W., and M.M. designed research; M.E., R.O., M.K., M.F., F.E., H.B.W., and M.M. performed research; M.E., R.O., M.K., M.F., C.v.H., F.W., F.E., H.B.W., and M.M. contributed new reagents/analytic tools; M.E., R.O., M.K., C.v.H., F.E., H.B.W., and M.M. analyzed data; and F.E., H.B.W., and M.M. wrote the paper.This paper was submitted directly (Track II) to the PNAS office.Abbreviations: A, acceptor; D, donor; MCB, mechanically controlled break junction.Data deposition: The atomic coordinates have been deposited in the Cambridge Structural Database, Cambridge Crystallographic Data Centre, Cambridge CB2 1EZ, United Kingdom (CSD reference no. 241632).

  7. Diode laser assisted minimal invasive sphenoidotomy for endoscopic transphenoidal pituitary surgery: our technique and results.

    Science.gov (United States)

    Lee, Jih-Chin; Lai, Wen-Sen; Ju, Da-Tong; Chu, Yueng-Hsiang; Yang, Jinn-Moon

    2015-03-01

    During endoscopic sinus surgery (ESS), intra-operative bleeding can significantly compromise visualization of the surgical field. The diode laser that provides good hemostatic and vaporization effects and excellent photocoagulation has been successfully applied in endoscopic surgery with several advantages. The current retrospective study demonstrates the feasibility of diode laser-combined endoscopic sinus surgery on sphenoidotomy. The patients who went through endoscopic transphenoidal pituitary surgery were enrolled. During the operation, the quality of the surgical field was assessed and graded by the operating surgeon using the scale proposed by Boezaart. The mean operation time was 37.80 ± 10.90 minutes. The mean score on the quality of surgical field was 1.95. A positive correlation between the lower surgical field quality score and the shorter surgical time was found with statistical significance (P diode laser-assisted sphenoidotomy is a reliable and safe approach of pituitary gland surgery with minimal invasiveness. It is found that application of diode laser significantly improved quality of surgical field and shortened operation time. © 2015 Wiley Periodicals, Inc.

  8. High temperature semiconductor diode laser pumps for high energy laser applications

    Science.gov (United States)

    Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

    2018-02-01

    Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

  9. Cold cathode diode X-ray source

    International Nuclear Information System (INIS)

    Cooperstein, G.; Lanza, R.C.; Sohval, A.R.

    1983-01-01

    A cold cathode diode X-ray source for radiation imaging, especially computed tomography, comprises a rod-like anode and a generally cylindrical cathode, concentric with the anode. The spacing between anode and cathode is so chosen that the diode has an impedance in excess of 100 ohms. The anode may be of tungsten, or of carbon with a tungsten and carbon coating. An array of such diodes may be used with a closely packed array of detectors to produce images of rapidly moving body organs, such as the beating heart. (author)

  10. Cern DD4424 ROM Diode Matrix

    CERN Multimedia

    A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

  11. A Diode Matrix model M792

    CERN Multimedia

    A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

  12. A Portable Diode Array Spectrophotometer.

    Science.gov (United States)

    Stephenson, David

    2016-05-01

    A cheap portable visible light spectrometer is presented. The spectrometer uses readily sourced items and could be constructed by anyone with a knowledge of electronics. The spectrometer covers the wavelength range 450-725 nm with a resolution better than 5 nm. The spectrometer uses a diffraction grating to separate wavelengths, which are detected using a 128-element diode array, the output of which is analyzed using a microprocessor. The spectrum is displayed on a small liquid crystal display screen and can be saved to a micro SD card for later analysis. Battery life (2 × AAA) is estimated to be 200 hours. The overall dimensions of the unit are 120 × 65 × 60 mm, and it weighs about 200 g. © The Author(s) 2016.

  13. Arbitrary waveform generator to improve laser diode driver performance

    Science.gov (United States)

    Fulkerson, Jr, Edward Steven

    2015-11-03

    An arbitrary waveform generator modifies the input signal to a laser diode driver circuit in order to reduce the overshoot/undershoot and provide a "flat-top" signal to the laser diode driver circuit. The input signal is modified based on the original received signal and the feedback from the laser diode by measuring the actual current flowing in the laser diode after the original signal is applied to the laser diode.

  14. Novel 755-nm diode laser vs. conventional 755-nm scanned alexandrite laser: Side-by-side comparison pilot study for thorax and axillary hair removal.

    Science.gov (United States)

    Paasch, Uwe; Wagner, Justinus A; Paasch, Hartmut W

    2015-01-01

    Alexandrite (755 nm) and diode lasers (800-810 nm) are commonly used for hair removal. The alexandrite laser technology is somewhat cumbersome whereas new diode lasers are more robust. Recently, alexandrite-like 755 nm wavelength diodes became available. To compare the efficacy, tolerability, and subject satisfaction of a 755 nm diode laser operated in conventional (HR) and non-conventional in-motion (SHR) modes with a conventional scanned alexandrite 755 nm laser for chest and axillary hair removal. A prospective, single-center, proof of principle study was designed to evaluate the safety, efficacy and handling of a 755 nm diode laser system in comparison to a standard alexandrite 755 nm scanning hair removal laser. The new 755 nm diode is suitable to be used in SHR and HR mode and has been tested for its safety, efficacy and handling in a volunteer with success. Overall, both systems showed a high efficacy in hair reduction (88.8% 755 nm diode laser vs. 77.7% 755 nm alexandrite laser). Also, during the study period, no severe adverse effects were reported. The new 755 nm diode laser is as effective and safe as the traditional 755 nm alexandrite laser. Additionally, treatment with the 755 nm diode laser with HR and SHR modes was found to be less painful.

  15. Detection of elemental mercury by multimode diode laser correlation spectroscopy.

    Science.gov (United States)

    Lou, Xiutao; Somesfalean, Gabriel; Svanberg, Sune; Zhang, Zhiguo; Wu, Shaohua

    2012-02-27

    We demonstrate a method for elemental mercury detection based on correlation spectroscopy employing UV laser radiation generated by sum-frequency mixing of two visible multimode diode lasers. Resonance matching of the multimode UV laser is achieved in a wide wavelength range and with good tolerance for various operating conditions. Large mode-hops provide an off-resonance baseline, eliminating interferences from other gas species with broadband absorption. A sensitivity of 1 μg/m3 is obtained for a 1-m path length and 30-s integration time. The performance of the system shows promise for mercury monitoring in industrial applications.

  16. Measurement of central nickel density in Doublet III plasmas with a soft x-ray diode array

    International Nuclear Information System (INIS)

    Groebner, R.J.; Jahns, G.L.; Ejima, S.; Hsieh, C.L.

    1985-01-01

    An array of soft x-ray diodes has been used to obtain central nickel densities for discharges in the Doublet III tokamak, during operation with an inconel primary limiter, in which nickel L-line radiation dominated the diode signals. The nature of the diode signals is determined primarily by comparison with soft x-ray spectra. The contribution of the continuum portion of the spectra to the central diode signal can be calculated and compared to the observed signal. When the diode signal is dominated by nickel L-line emission, the observed signal is considerably larger than the calculated continuum contribution. Chordal data from the array of diodes are inverted to provide the spatial profile of soft x-ray emission. Because the diodes are absolute detectors of radiation, the soft x-ray emission profile is used to obtain the absolute nickel concentration and density profile in the center of the plasma. A computer code, including over 100 nickel L-line transitions, has been developed to obtain the nickel density. The nickel L-line cooling rate, calculated with the code, is presented. The nickel density obtained by this technique agrees well with that obtained from the K/sub α/ line intensity measured with a soft x-ray spectrometer and that obtained from a bolometric measurement of central radiated power coupled with a coronal equilibrium model of the radiation

  17. Investigation of MIM Diodes for RF Applications

    KAUST Repository

    Khan, Adnan

    2015-01-01

    zero bias condition as well as the possibility of realizing them through printing makes them attractive for (Radio Frequency) RF applications. However, MIM diodes have not been explored much for RF applications. One reason preventing their widespread RF

  18. Diode laser (980nm) cartilage reshaping

    Science.gov (United States)

    El Kharbotly, A.; El Tayeb, T.; Mostafa, Y.; Hesham, I.

    2011-03-01

    Loss of facial or ear cartilage due to trauma or surgery is a major challenge to the otolaryngologists and plastic surgeons as the complicated geometric contours are difficult to be animated. Diode laser (980 nm) has been proven effective in reshaping and maintaining the new geometric shape achieved by laser. This study focused on determining the optimum laser parameters needed for cartilage reshaping with a controlled water cooling system. Harvested animal cartilages were angulated with different degrees and irradiated with different diode laser powers (980nm, 4x8mm spot size). The cartilage specimens were maintained in a deformation angle for two hours after irradiation then released for another two hours. They were serially measured and photographed. High-power Diode laser irradiation with water cooling is a cheep and effective method for reshaping the cartilage needed for reconstruction of difficult situations in otorhinolaryngologic surgery. Key words: cartilage,diode laser (980nm), reshaping.

  19. AASERT-97 Development of New Diode Lasers

    National Research Council Canada - National Science Library

    Peyghambarian, Nasser

    2001-01-01

    This research explored new ways for diode laser fabrications. Focused was on the development of efficient organic light emitting materials and the fabrication of laser structures incorporating these materials...

  20. Spectral narrowing of a 980 nm tapered diode laser bar

    Science.gov (United States)

    Vijayakumar, Deepak; Jensen, Ole Bjarlin; Lucas Leclin, Ga"lle; Petersen, Paul Michael; Thestrup, Birgitte

    2011-03-01

    High power diode laser bars are interesting in many applications such as solid state laser pumping, material processing, laser trapping, laser cooling and second harmonic generation. Often, the free running laser bars emit a broad spectrum of the order of several nanometres which limit their scope in wavelength specific applications and hence, it is vital to stabilize the emission spectrum of these devices. In our experiment, we describe the wavelength narrowing of a 12 element 980 nm tapered diode laser bar using a simple Littman configuration. The tapered laser bar which suffered from a big smile has been "smile corrected" using individual phase masks for each emitter. The external cavity consists of the laser bar, both fast and slow axis micro collimators, smile correcting phase mask, 6.5x beam expanding lens combination, a 1200 lines/mm reflecting grating with 85% efficiency in the first order, a slow axis focusing cylindrical lens of 40 mm focal length and an output coupler which is 10% reflective. In the free running mode, the laser emission spectrum was 5.5 nm wide at an operating current of 30A. The output power was measured to be in excess of 12W. Under the external cavity operation, the wavelength spread of the laser could be limited to 0.04 nm with an output power in excess of 8 W at an operating current of 30A. The spectrum was found to be tuneable in a range of 16 nm.

  1. Application of PIN diodes in Physics Research

    International Nuclear Information System (INIS)

    Ramirez-Jimenez, F. J.; Mondragon-Contreras, L.; Cruz-Estrada, P.

    2006-01-01

    A review of the application of PIN diodes as radiation detectors in different fields of Physics research is presented. The development and research in semiconductor technology, the use of PIN diodes in particle counting, X-and γ-ray spectroscopy, medical applications and charged particle spectroscopy are considered. Emphasis is made in the activities realized in the different research and development Mexican institutions dealing with this kind of radiation detectors

  2. Phase-change radiative thermal diode

    OpenAIRE

    Ben-Abdallah, Philippe; Biehs, Svend-Age

    2013-01-01

    A thermal diode transports heat mainly in one preferential direction rather than in the opposite direction. This behavior is generally due to the non-linear dependence of certain physical properties with respect to the temperature. Here we introduce a radiative thermal diode which rectifies heat transport thanks to the phase transitions of materials. Rectification coefficients greater than 70% and up to 90% are shown, even for small temperature differences. This result could have important ap...

  3. Diode lasers and their applications in spectrometry

    International Nuclear Information System (INIS)

    Pavone, F.S.

    1997-01-01

    The impact of semiconductor diode laser in different fields ranging from communications to spectroscopy is becoming huge and pushes the research into developing sources satisfying the different requirements. For applications related to trace gas detection, the low amplitude noise in the light source of semiconductor diode laser is sufficient to obtain interesting results. Trace gas of molecular species as methane is interesting for different reason: it plays an important role in both radiative transport an photochemistry in the atmosphere

  4. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  5. Radiation effects in semiconductor laser diode arrays

    International Nuclear Information System (INIS)

    Carson, R.F.

    1988-01-01

    The effects of radiation events are important for many of the present and future applications that involve optoelectronic components. Laser diodes show a strong resistance to degradation by gamma rays, prompt x-rays and (to a lesser extent), neutrons. This is due to the short carrier lifetime that is associated with stimulated emission and the high current injection conditions that are present in these devices. Radiation-resistant properties should carry over to many of the more recently developed devices such as multi-stripe array and broad area laser diodes. There are, however, additional considerations for radiation tolerance that are introduced by these devices. Arrays and other high power laser diodes have larger active region volumes than lower power single stripe devices. In addition, evanescent field coupling between stripes, the material quality available from newer MOCVD epitaxial growth techniques, and stripe definition methods may all influence the radiation tolerance of the high power laser diode devices. Radiation tests have been conducted on various GaAs-GaAlAs laser diode array and broad area devices. Tests involving total gamma dose have indicated that high power laser diodes and arrays have small degradations in light power output with current input after 4 MRad(Si) of radiation from a Co 60 source. Additional test results involving flash x-rays indicate that high power diode lasers and arrays are tolerant to 10 12 rads(Si)/sec, when observed on microsecond or millisecond time scales. High power diode laser devices were also irradiated with neutrons to a fluence of 10 14 neutrons/cm 2 with some degradation of threshold current level

  6. Semiconductor Laser Diode Pumps for Inertial Fusion Energy Lasers

    International Nuclear Information System (INIS)

    Deri, R.J.

    2011-01-01

    Solid-state lasers have been demonstrated as attractive drivers for inertial confinement fusion on the National Ignition Facility (NIF) at Lawrence Livermore National Laboratory (LLNL) and at the Omega Facility at the Laboratory for Laser Energetics (LLE) in Rochester, NY. For power plant applications, these lasers must be pumped by semiconductor diode lasers to achieve the required laser system efficiency, repetition rate, and lifetime. Inertial fusion energy (IFE) power plants will require approximately 40-to-80 GW of peak pump power, and must operate efficiently and with high system availability for decades. These considerations lead to requirements on the efficiency, price, and production capacity of the semiconductor pump sources. This document provides a brief summary of these requirements, and how they can be met by a natural evolution of the current semiconductor laser industry. The detailed technical requirements described in this document flow down from a laser ampl9ifier design described elsewhere. In brief, laser amplifiers comprising multiple Nd:glass gain slabs are face-pumped by two planar diode arrays, each delivering 30 to 40 MW of peak power at 872 nm during a ∼ 200 (micro)s quasi-CW (QCW) pulse with a repetition rate in the range of 10 to 20 Hz. The baseline design of the diode array employs a 2D mosaic of submodules to facilitate manufacturing. As a baseline, they envision that each submodule is an array of vertically stacked, 1 cm wide, edge-emitting diode bars, an industry standard form factor. These stacks are mounted on a common backplane providing cooling and current drive. Stacks are conductively cooled to the backplane, to minimize both diode package cost and the number of fluid interconnects for improved reliability. While the baseline assessment in this document is based on edge-emitting devices, the amplifier design does not preclude future use of surface emitting diodes, which may offer appreciable future cost reductions and

  7. DC Analysis of an Ideal Diode Network Using Its Decomposed Piecevise-Linear Model

    Directory of Open Access Journals (Sweden)

    Z. Kolka

    1994-09-01

    Full Text Available A new method of finding the operating points in circuits containing ideal diodes which utilizes the decomposed form of the state model of an one-dimensional piecewise-linear (PWL system is developed. The universal procedure shown gives all the existing solutions quite automatically.

  8. High-power pulsed and CW diode-pumped mode-locked Nd:YAG lasers

    Science.gov (United States)

    Marshall, Larry R.; Hays, A. D.; Kaz, Alex; Kasinski, Jeff; Burnham, R. L.

    1991-01-01

    The operation of both pulsed and CW diode-pumped mode-locked Nd:YAG lasers are presented. The pulsed laser produced 1.0 mJ with pulsewidths of 90 psec at 20 Hz. The CW pumped laser produced 6 W output at 1.064 microns and 3 W output at 532 nm.

  9. Eye-safe diode laser Doppler lidar with a MEMS beam-scanner

    DEFF Research Database (Denmark)

    Hu, Qi; Pedersen, Christian; Rodrigo, Peter John

    2016-01-01

    We present a novel Doppler lidar that employs a cw diode laser operating at 1.5 μm and a micro-electro-mechanical-system scanning mirror (MEMS-SM). In this work, two functionalities of the lidar system are demonstrated. Firstly, we describe the capability to effectively steer the lidar probe beam...

  10. All solid-state diode pumped Nd:YAG MOPA with stimulated Brillouin phase conjugate mirror

    NARCIS (Netherlands)

    Offerhaus, Herman L.; Godfried, Herman; Godfried, H.P; Witteman, W.J.

    1996-01-01

    At the Nederlands Centrum voor Laser Research (NCLR) a 1 kHz diode-pumped Nd:YAG Master Oscillator Power Amplifier (MOPA) chain with a Stimulated Brillouin Scattering (SBS) Phase Conjugate mirror is designed and operated. A small Brewster angle Nd:YAG slab (2 by 2 by 20 mm) is side pumped with 200

  11. Discrete mode laser diodes for FTTH/PON applications up to 10 Gbit/s

    NARCIS (Netherlands)

    O'Carroll, J.; Phelan, R.; Kelly, B.; Byrne, D.; Latkowski, S.; Anandarajah, P.M.; Barry, L.P.

    2012-01-01

    Discrete Mode Laser Diodes (DMLDs) present an economic approach with a focus on high volume manufacturability of single mode lasers using a single step fabrication process. We report on a DMLD designed for operation in the 1550 nm window with high Side Mode Suppression Ratio (SMSR) over a wide

  12. Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser

    Science.gov (United States)

    Grave, I.; Kan, S. C.; Griffel, G.; Wu, S. W.; Sa'Ar, A.

    1991-01-01

    A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.

  13. Optical neuron by use of a laser diode with injection seeding and external optical feedback

    NARCIS (Netherlands)

    Mos, E.C.; Hoppenbrouwers, J.J.L.; Hill, M.T.; Blum, M.W.; Schleipen, J.J.H.B.; Waardt, de H.

    2000-01-01

    We present an all-optical neuron by use of a multimode laser diode that is subjected to external optical feedback and light injection. The shape of the threshold function, that is needed for neural operation, is controlled by adjusting the external feedback level for two longitudinal cavity modes of

  14. Diode array pumped, non-linear mirror Q-switched and mode-locked

    Indian Academy of Sciences (India)

    A non-linear mirror consisting of a lithium triborate crystal and a dichroic output coupler are used to mode-lock (passively) an Nd : YVO4 laser, pumped by a diode laser array. The laser can operate both in cw mode-locked and simultaneously Q-switched and mode-locked (QML) regime. The peak power of the laser while ...

  15. High tunability and superluminescence in InAs mid-infrared light emitting diodes

    International Nuclear Information System (INIS)

    Sherstnev, V.V.; Krier, A.; Hill, G.

    2002-01-01

    We report on the observation of super luminescence and high spectral current tunability (181 nm) of InAs light emitting diodes operating at 3.0 μm. The source is based on an optical whispering gallery mode which is generated near the edges of the mesa and which is responsible for the superluminescence. (author)

  16. GaN-based blue laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Miyajima, Takao; Yanashima, Katsunori; Funato, Kenji; Asatsuma, Tsunenori; Kobayashi, Toshimasa [CT Development Centre, CNC, Sony Corporation, Atsugi, Kanagawa (Japan); Tojyo, Tsuyoshi; Asano, Takeharu; Kijima, Satoru; Hino, Tomonori; Takeya, Motonobu; Uchida, Shiro; Ikeda, Masao [Sony Shiroishi Semiconductor Inc., Shiroishi, Miyagi (Japan); Tomiya, Shigetaka [Environment and Analyhsis Technology Department, Sony Corporation, Hodogaya, Yokohama (Japan)

    2001-08-13

    We report our recent progress on GaN-based high-power laser diodes (LDs), which will be applied as a light source in high-density optical storage systems. We have developed raised-pressure metal-organic chemical vapour deposition (RP-MOCVD), which can reduce the threading-dislocation density in the GaN layer to several times 10{sup 8} cm{sup -2}, and demonstrated continuous-wave (cw) operation of GaN-based LD grown by RP-MOCVD. Furthermore, we found that the epitaxial lateral overgrowth (ELO) technique is useful for further reducing threading-dislocation density to 10{sup 6} cm{sup -2} and reducing the roughness of the cleaved facet. By using this growth technique and optimizing device parameters, the lifetime of LDs was improved to more than 1000 hours under 30 mW cw operation at 60 deg. C. Our results proved that reducing both threading-dislocation density and consumption power is a valid approach to realizing a practical GaN-based LD. On the other hand, the practical GaN-based LD was obtained when threading-dislocation density in ELO-GaN was only reduced to 10{sup 6} cm{sup -2}, which is a relatively small reduction as compared with threading-dislocation density in GaAs- and InP-based LDs. We believe that the multiplication of non-radiative centres is very slow in GaN-based LDs, possibly due to the innate character of the GaN-based semiconductor itself. (author)

  17. Functionalized graphene/silicon chemi-diode H2 sensor with tunable sensitivity

    International Nuclear Information System (INIS)

    Uddin, Md Ahsan; Singh, Amol Kumar; Sudarshan, Tangali S; Koley, Goutam

    2014-01-01

    A reverse bias tunable Pd- and Pt-functionalized graphene/Si heterostructure Schottky diode H 2 sensor has been demonstrated. Compared to the graphene chemiresistor sensor, the chemi-diode sensor offers more than one order of magnitude higher sensitivity as the molecular adsorption induced Schottky barrier height change causes the heterojunction current to vary exponentially in reverse bias. The reverse bias operation also enables low power consumption, as well as modulation of the atomically thin graphene’s Fermi level, leading to tunable sensitivity and detection of H 2 down to the sub-ppm range. (paper)

  18. Functionalized graphene/silicon chemi-diode H₂ sensor with tunable sensitivity.

    Science.gov (United States)

    Uddin, Md Ahsan; Singh, Amol Kumar; Sudarshan, Tangali S; Koley, Goutam

    2014-03-28

    A reverse bias tunable Pd- and Pt-functionalized graphene/Si heterostructure Schottky diode H2 sensor has been demonstrated. Compared to the graphene chemiresistor sensor, the chemi-diode sensor offers more than one order of magnitude higher sensitivity as the molecular adsorption induced Schottky barrier height change causes the heterojunction current to vary exponentially in reverse bias. The reverse bias operation also enables low power consumption, as well as modulation of the atomically thin graphene's Fermi level, leading to tunable sensitivity and detection of H₂ down to the sub-ppm range.

  19. Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser.

    Science.gov (United States)

    Ma, J; Xie, G Q; Gao, W L; Yuan, P; Qian, L J; Yu, H H; Zhang, H J; Wang, J Y

    2012-04-15

    A diode-end-pumped passively mode-locked femtosecond Tm-doped calcium lithium niobium gallium garnet (Tm:CLNGG) disordered crystal laser was demonstrated for the first time to our knowledge. With a 790 nm laser diode pumping, stable CW mode-locking operation was obtained by using a semiconductor saturable absorber mirror. The disordered crystal laser generated mode-locked pulses as short as 479 fs, with an average output power of 288 mW, and repetition rate of 99 MHz in 2 μm spectral region. © 2012 Optical Society of America

  20. Frequency locking of compact laser-diode modules at 633 nm

    Science.gov (United States)

    Nölleke, Christian; Leisching, Patrick; Blume, Gunnar; Jedrzejczyk, Daniel; Pohl, Johannes; Feise, David; Sahm, Alexander; Paschke, Katrin

    2018-02-01

    This work reports on a compact diode-laser module emitting at 633 nm. The emission frequency can be tuned with temperature and current, while optical feedback of an internal DBR grating ensures single-mode operation. The laser diode is integrated into a micro-fabricated package, which includes optics for beam shaping, a miniaturized optical isolator, and a vapor cell as frequency reference. The achieved absolute frequency stability is below 10-8 , while the output power can be more than 10 mW. This compact absolute frequency-stabilized laser system can replace gas lasers and may be integrated in future quantum technology devices.

  1. Physics of frequency-modulated comb generation in quantum-well diode lasers

    Science.gov (United States)

    Dong, Mark; Cundiff, Steven T.; Winful, Herbert G.

    2018-05-01

    We investigate the physical origin of frequency-modulated combs generated from single-section semiconductor diode lasers based on quantum wells, isolating the essential physics necessary for comb generation. We find that the two effects necessary for comb generation—spatial hole burning (leading to multimode operation) and four-wave mixing (leading to phase locking)—are indeed present in some quantum-well systems. The physics of comb generation in quantum wells is similar to that in quantum dot and quantum cascade lasers. We discuss the nature of the spectral phase and some important material parameters of these diode lasers.

  2. Diode with plasma cathode on the basis of a sliding discharge

    International Nuclear Information System (INIS)

    Korenev, S.A.

    1982-01-01

    The operative regime of a diode with plasma cathode on the basis of a discharge sliding over the surface of dielectric without an additional switching - on discharge generator at the glance of capacity couplings of anode and cathode assemblies is described. It is experimentally shown that at the voltage at the diode of about 150-300 kV electron beams with the 400-1000 A/cm current density can be formed. The velocity of cathode plasma motion in the direction of anode for different materials of dielctric insertion in a cathode assembly amounts to (1.5-10)x10 5 cm/s

  3. Monitoring Temperature in High Enthalpy Arc-heated Plasma Flows using Tunable Diode Laser Absorption Spectroscopy

    Science.gov (United States)

    Martin, Marcel Nations; Chang, Leyen S.; Jeffries, Jay B.; Hanson, Ronald K.; Nawaz, Anuscheh; Taunk, Jaswinder S.; Driver, David M.; Raiche, George

    2013-01-01

    A tunable diode laser sensor was designed for in situ monitoring of temperature in the arc heater of the NASA Ames IHF arcjet facility (60 MW). An external cavity diode laser was used to generate light at 777.2 nm and laser absorption used to monitor the population of electronically excited oxygen atoms in an air plasma flow. Under the assumption of thermochemical equilibrium, time-resolved temperature measurements were obtained on four lines-of-sight, which enabled evaluation of the temperature uniformity in the plasma column for different arcjet operating conditions.

  4. Wireless Power Transmission to Organic Light Emitting Diode Lighting Panel with Magnetically Coupled Resonator

    Science.gov (United States)

    Kim, Yong-Hae; Han, Jun-Han; Kang, Seung-Youl; Cheon, Sanghoon; Lee, Myung-Lae; Ahn, Seong-Deok; Zyung, Taehyoung; Lee, Jeong-Ik; Moon, Jaehyun; Chu, Hye Yong

    2012-09-01

    We are successful to lit the organic light emitting diode (OLED) lighting panel through the magnetically coupled wireless power transmission technology. For the wireless power transmission, we used the operation frequency 932 kHz, specially designed double spiral type transmitter, small and thin receiver on the four layered printed circuit board, and schottky diodes for the full bridge rectifier. Our white OLED is a hybrid type, in which phosphorescent and fluorescent organics are used together to generate stable white color. The total efficiency of power transmission is around 72%.

  5. Performance of the cold powered diodes and diode leads in the main magnets of the LHC

    CERN Document Server

    Willering, G P; Bajko, M; Bednarek, M; Bottura, L; Charifoulline, Z; Dahlerup-Petersen, K; Dib, G; D'Angelo, G; Gharib, A; Grand-Clement, L; Izquierdo Bermudez, S; Prin, H; Roger, V; Rowan, S; Savary, F; Tock, J-Ph; Verweij, A

    2015-01-01

    During quench tests in 2011 variations in resistance of an order of magnitude were found in the diode by-pass circuit of the main LHC magnets. An investigation campaign was started to understand the source, the occurrence and the impact of the high resistances. Many tests were performed offline in the SM18 test facility with a focus on the contact resistance of the diode to heat sink contact and the diode wafer temperature. In 2014 the performance of the diodes and diode leads of the main dipole bypass systems in the LHC was assessed during a high current qualification test. In the test a current cycle similar to a magnet circuit discharge from 11 kA with a time constant of 100 s was performed. Resistances of up to 600 μΩ have been found in the diode leads at intermediate current, but in general the high resistances decrease at higher current levels and no sign of overheating of diodes has been seen and the bypass circuit passed the test. In this report the performance of the diodes and in particular the co...

  6. Note: Demonstration of an external-cavity diode laser system immune to current and temperature fluctuations.

    Science.gov (United States)

    Miao, Xinyu; Yin, Longfei; Zhuang, Wei; Luo, Bin; Dang, Anhong; Chen, Jingbiao; Guo, Hong

    2011-08-01

    We demonstrate an external-cavity laser system using an anti-reflection coated laser diode as gain medium with about 60 nm fluorescence spectrum, and a Rb Faraday anomalous dispersion optical filter (FADOF) as frequency-selecting element with a transmission bandwidth of 1.3 GHz. With 6.4% optical feedback, a single stable longitudinal mode is obtained with a linewidth of 69 kHz. The wavelength of this laser is operating within the center of the highest transmission peak of FADOF over a diode current range from 55 mA to 142 mA and a diode temperature range from 15 °C to 35 °C, thus it is immune to the fluctuations of current and temperature.

  7. Minority-carrier transport in InGaAsSb thermophotovoltaic diodes

    International Nuclear Information System (INIS)

    Charache, G.; Martinelli, R.U.; Garbuzov, D.Z.; Lee, H.; Morris, N.; Odubanjo, T.; Connolly, J.C.

    1997-05-01

    Uncoated InGaAsSb/GaSb thermophotovoltaic (TPV) diodes with 0.56 eV (2.2 microm) bandgaps exhibit external quantum efficiencies of 59% at 2 microm. The devices have electron diffusion lengths as long as 29 microm in 8-microm-wide p-InGaAsSb layers and hole diffusion lengths of 3 microm in 6-microm-wide n-InGaAsSb layers. The electron and hole diffusion lengths appear to increase with increasing p- and n-layer widths. At 632.8 nm the internal quantum efficiencies of diodes with 1- to 8-microm-wide p-layers are above 89% and are independent of the p-layer width, indicating long electron diffusion lengths. InGaAsSb has, therefore, excellent minority carrier transport properties that are well suited to efficient TPV diode operation. The structures were grown by molecular-beam epitaxy

  8. The impact of external optical feedback on the degradation behavior of high-power diode lasers

    DEFF Research Database (Denmark)

    Hempel, Martin; Chi, Mingjun; Petersen, Paul Michael

    2013-01-01

    The impact of external feedback on high-power diode laser degradation is studied. For this purpose early stages of gradual degradation are prepared by accelerated aging of 808-nm-emitting AlGaAs-based devices. While the quantum well that actually experiences the highest total optical load remains...... unaffected, severe impact is observed to the cladding layers and the waveguide. Consequently hardening of diode lasers for operation under external optical feedback must necessarily involve claddings and waveguide, into which the quantum well is embedded.......The impact of external feedback on high-power diode laser degradation is studied. For this purpose early stages of gradual degradation are prepared by accelerated aging of 808-nm-emitting AlGaAs-based devices. While the quantum well that actually experiences the highest total optical load remains...

  9. Silicon light-emitting diodes and lasers photon breeding devices using dressed photons

    CERN Document Server

    Ohtsu, Motoichi

    2016-01-01

    This book focuses on a novel phenomenon named photon breeding. It is applied to realizing light-emitting diodes and lasers made of indirect-transition-type silicon bulk crystals in which the light-emission principle is based on dressed photons. After presenting physical pictures of dressed photons and dressed-photon phonons, the principle of light emission by using dressed-photon phonons is reviewed. A novel phenomenon named photon breeding is also reviewed. Next, the fabrication and operation of light emitting diodes and lasers are described The role of coherent phonons in these devices is discussed. Finally, light-emitting diodes using other relevant crystals are described and other relevant devices are also reviewed.

  10. Green high-power tunable external-cavity GaN diode laser at 515 nm

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2016-01-01

    A 480 mW green tunable diode laser system is demonstrated for the first time to our knowledge. The laser system is based on a GaN broad-area diode laser and Littrow external-cavity feedback. The green laser system is operated in two modes by switching the polarization direction of the laser beam...... incident on the grating. When the laser beam is p-polarized, an output power of 50 mW with a tunable range of 9.2 nm is achieved. When the laser beam is s-polarized, an output power of 480 mW with a tunable range of 2.1 nm is obtained. This constitutes the highest output power from a tunable green diode...... laser system....

  11. Study on the ion diode with a laser-plasma anode

    International Nuclear Information System (INIS)

    Bykovskij, Yu.A.; Kozyrev, Yu.P.; Kozlovskij, K.I.; Tsybin, A.S.; Shikanov, A.E.

    1981-01-01

    Results of investigation into a pulsed ion diode with magnetic electron isolation (DMI) using a laser ion source are stated. The investigations were carried on by measurement of current characteristics and neutron diode yield for different parameters of laser radiation, isolating magnetic field and DMI geometry. approximately equal to 150 A current of accelerated ions has been generated at a density of approximately equal to 10 A/cm 2 and approximately 1 μs pulse duration when using isolating magnetic field having inductance of up to 10 kGs and laser radiation energy of up to 1 J (power density > or approximately 10 9 W/cm 2 ). Current diode efficiency constituted approximately 50 %. Neutron yield amounted to approximately 10 7 neutr/pulse (D(d, n)He 3 reaction) at an optimal value of inductance of isolating magnetic field. Frequency regime of DMI operation with pulse repetition of up to 10 Hz has been realized [ru

  12. Colour-tunable light-emitting diodes based on InP/GaP nanostructures

    International Nuclear Information System (INIS)

    Hatami, Fariba; Masselink, W Ted; Harris, James S

    2006-01-01

    We describe a novel colour-tunable light-emitting diode whose operation is based on direct band-gap emission from coupled configurations of InP quantum dots and quantum wells embedded in GaP. The control of the emission colour stems from a marked difference in the current dependence of intensities of two different emission processes. At lower currents, the emission is dominated by the 720 nm luminescence from the quantum dots and appears red; at higher currents, the emission is dominated by the 550 nm quantum-well luminescence and the perceived colour is green. Thus, we are able to tune the colour of such diodes from red to green by means of drive current. A multi-colour pixel can be realized by a single diode, with rapid switching between colour states to provide a range of colour mix

  13. Recent TWOQUICK particle simulations of one- and two- stage transmission lines and diodes on PBFA and SABRE

    International Nuclear Information System (INIS)

    Poukey, J.W.; Cuneo, M.E.; Lockner, T.R.

    1993-01-01

    This paper presents recent particle simulation studies of the pulsed-power machines PBFA and SABRE. The code used is the 2-D electromagnetic TWOQUICK. For SABRE we emphasize the single-stage case and compare with experiment. Here the voltage adder, magnetically-insulated-transmission-line (MITL), and proton applied-B extraction diode are all included in the fully time-dependent simulations. Results include vacuum wave precursor effects vs. cathode turn-on threshold, and the sheath-retrapping benefits of diode undermatching. For PBFA we emphasize the 2-stage case and compare with experiments using lithium ions. Here we include the transmission lines and MITLs feeding the 2-stage barrel diode. Results show that good operation is critically dependent on careful B-field shaping in the feeds and diode

  14. Modelling of the thermal parameters of high-power linear laser-diode arrays. Two-dimensional transient model

    International Nuclear Information System (INIS)

    Bezotosnyi, V V; Kumykov, Kh Kh

    1998-01-01

    A two-dimensional transient thermal model of an injection laser is developed. This model makes it possible to analyse the temperature profiles in pulsed and cw stripe lasers with an arbitrary width of the stripe contact, and also in linear laser-diode arrays. This can be done for any durations and repetition rates of the pump pulses. The model can also be applied to two-dimensional laser-diode arrays operating quasicontinuously. An analysis is reported of the influence of various structural parameters of a diode array on the thermal regime of a single laser. The temperature distributions along the cavity axis are investigated for different variants of mounting a crystal on a heat sink. It is found that the temperature drop along the cavity length in cw and quasi-cw laser diodes may exceed 20%. (lasers)

  15. Experimental research on time-resolved evolution of cathode plasma expansion velocity in a long pulsed magnetically insulated coaxial diode

    Science.gov (United States)

    Zhu, Danni; Zhang, Jun; Zhong, Huihuang; Ge, Xingjun; Gao, Jingming

    2018-02-01

    Unlike planar diodes, separate research of the axial and radial plasma expansion velocities is difficult for magnetically insulated coaxial diodes. Time-resolved electrical diagnostic which is based on the voltage-ampere characteristics has been employed to study the temporal evolution of the axial and radial cathode plasma expansion velocities in a long pulsed magnetically insulated coaxial diode. Different from a planar diode with a "U" shaped profile of temporal velocity evolution, the temporal evolution trend of the axial expansion velocity is proved to be a "V" shaped profile. Apart from the suppression on the radial expansion velocity, the strong magnetic field is also conducive to slowing down the axial expansion velocity. Compared with the ordinary graphite cathode, the carbon velvet and graphite composite cathode showed superior characteristics as judged by the low plasma expansion velocity and long-term electrical stability as a promising result for applications where long-pulsed and reliable operation at high power is required.

  16. A comparative evaluation: Oral leukoplakia surgical management using diode laser, CO2 laser, and cryosurgery.

    Science.gov (United States)

    Natekar, Madhukar; Raghuveer, Hosahallli-Puttaiah; Rayapati, Dilip-Kumar; Shobha, Eshwara-Singh; Prashanth, Nagesh-Tavane; Rangan, Vinod; Panicker, Archana G

    2017-06-01

    The comparatively evaluate the three surgical treatment modalities namely cryosurgery, diode and CO2 laser surgery in terms of healing outcomes on the day of surgery, first and second week post operatively and recurrence at the end of 18 months was assessed. Thirty selected patients were divided randomly into three groups. Each group comprising of ten patients were subjected to one of the three modalities of treatment namely cryosurgery, diode laser or CO2 laser surgery for ablation of OL. Obtained data was analyzed using mainly using Chi-square and Anova tests. Study showed statistical significant differences (p > 0.05) for evaluation parameters like pain, edema and scar. The parameters like infection, recurrence, bleeding showed no statistical significance. Pain was significantly higher in CO2 laser surgery group as compared with diode laser group. There was no recurrence observed at the end of the 6 months follow up period in all the three study groups. Observations from the study highlights that all three surgical modalities used in this study were effective for treatment of OL, and the overall summation of the results of the study showed that laser therapy (CO2 and Diode) seems to offer better clinically significant results than cryotherapy. Key words: Oral premalignant lesion, leukoplakia, cryosurgery, CO2 laser surgery, diode laser surgery.

  17. 2000W high beam quality diode laser for direct materials processing

    Science.gov (United States)

    Qin, Wen-bin; Liu, You-qiang; Cao, Yin-hua; Gao, Jing; Pan, Fei; Wang, Zhi-yong

    2011-11-01

    This article describes high beam quality and kilowatt-class diode laser system for direct materials processing, using optical design software ZEMAX® to simulate the diode laser optical path, including the beam shaping, collimation, coupling, focus, etc.. In the experiment, the diode laser stack of 808nm and the diode laser stack of 915nm were used for the wavelength coupling, which were built vertical stacks up to 16 bars. The threshold current of the stack is 6.4A, the operating current is 85A and the output power is 1280W. Through experiments, after collimating the diode laser beam with micro-lenses, the fast axis BPP of the stack is less than 60mm.mrad, and the slow-axis BPP of the stack is less than 75mm.mrad. After shaping the laser beam and improving the beam quality, the fast axis BPP of the stack is still 60mm.mrad, and the slow-axis BPP of the stack is less than 19mm.mrad. After wavelength coupling and focusing, ultimately the power of 2150W was obtained, focal spot size of 1.5mm * 1.2mm with focal length 300mm. The laser power density is 1.2×105W/cm2, and that can be used for metal remelting, alloying, cladding and welding. The total optical coupling conversion efficiency is 84%, and the total electrical - optical conversion efficiency is 50%.

  18. A generalization of the child-langmuir relation for one-dimensional time-dependent diodes

    International Nuclear Information System (INIS)

    Kadish, A.; Jones, M.E.; Peter, W.

    1985-01-01

    The steady-state Child-Langmuir relation between current and applied voltage has been a basic principle upon which all modern diode physics has been based. With advances in pulsed power technology and diode design, new devices which operate in vastly different parameter regimes have recently become of interest. Many of these devices cannot be said to satisfy the strict requirements necessary for Child-Langmuir flow. For instance, in a recent pulsed electron device for use in high-current accelerators, the applied voltage is sinusoidal in time. In another case, development of sources for heavy ion fusion necessitates understanding of transient current oscillations when the voltage is applied abruptly. We derive the time-dependent relationship between the emitted current and time-dependent applied voltage in a nonrelativistic planar diode. The relationship is valid for arbitrary voltage shapes V(t) applied to the diode for times less than the beam-front transit time across the gap. Using this relationship, transient and time-dependent effects in the start-up phase of any nonrelativistic diode can be analyzed

  19. Ion diode performance on a positive polarity inductive voltage adder with layered magnetically insulated transmission line flow

    International Nuclear Information System (INIS)

    Hinshelwood, D. D.; Schumer, J. W.; Allen, R. J.; Commisso, R. J.; Jackson, S. L.; Murphy, D. P.; Phipps, D.; Swanekamp, S. B.; Weber, B. V.; Ottinger, P. F.; Apruzese, J. P.; Cooperstein, G.; Young, F. C.

    2011-01-01

    A pinch-reflex ion diode is fielded on the pulsed-power machine Mercury (R. J. Allen, et al., 15th IEEE Intl. Pulsed Power Conf., Monterey, CA, 2005, p. 339), which has an inductive voltage adder (IVA) architecture and a magnetically insulated transmission line (MITL). Mercury is operated in positive polarity resulting in layered MITL flow as emitted electrons are born at a different potential in each of the adder cavities. The usual method for estimating the voltage by measuring the bound current in the cathode and anode of the MITL is not accurate with layered flow, and the interaction of the MITL flow with a pinched-beam ion diode load has not been studied previously. Other methods for determining the diode voltage are applied, ion diode performance is experimentally characterized and evaluated, and circuit and particle-in-cell (PIC) simulations are performed. Results indicate that the ion diode couples efficiently to the machine operating at a diode voltage of about 3.5 MV and a total current of about 325 kA, with an ion current of about 70 kA of which about 60 kA is proton current. It is also found that the layered flow impedance of the MITL is about half the vacuum impedance.

  20. Sub-100 fs high average power directly blue-diode-laser-pumped Ti:sapphire oscillator

    Science.gov (United States)

    Rohrbacher, Andreas; Markovic, Vesna; Pallmann, Wolfgang; Resan, Bojan

    2016-03-01

    Ti:sapphire oscillators are a proven technology to generate sub-100 fs (even sub-10 fs) pulses in the near infrared and are widely used in many high impact scientific fields. However, the need for a bulky, expensive and complex pump source, typically a frequency-doubled multi-watt neodymium or optically pumped semiconductor laser, represents the main obstacle to more widespread use. The recent development of blue diodes emitting over 1 W has opened up the possibility of directly diode-laser-pumped Ti:sapphire oscillators. Beside the lower cost and footprint, a direct diode pumping provides better reliability, higher efficiency and better pointing stability to name a few. The challenges that it poses are lower absorption of Ti:sapphire at available diode wavelengths and lower brightness compared to typical green pump lasers. For practical applications such as bio-medicine and nano-structuring, output powers in excess of 100 mW and sub-100 fs pulses are required. In this paper, we demonstrate a high average power directly blue-diode-laser-pumped Ti:sapphire oscillator without active cooling. The SESAM modelocking ensures reliable self-starting and robust operation. We will present two configurations emitting 460 mW in 82 fs pulses and 350 mW in 65 fs pulses, both operating at 92 MHz. The maximum obtained pulse energy reaches 5 nJ. A double-sided pumping scheme with two high power blue diode lasers was used for the output power scaling. The cavity design and the experimental results will be discussed in more details.

  1. Photo-Detectors Integrated with Resonant Tunneling Diodes

    Directory of Open Access Journals (Sweden)

    José M. L. Figueiredo

    2013-07-01

    Full Text Available We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD. Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR region. The resonant tunneling diode photo-detector (RTD-PD can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTD’s NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems.

  2. Spectroscopic amplifier for pin diode; Amplificador espectroscopico para diodo Pin

    Energy Technology Data Exchange (ETDEWEB)

    Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R., E-mail: bebe.luna_s@hotmail.com [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico)

    2014-10-15

    The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

  3. Nanoengineering of organic light-emitting diodes

    International Nuclear Information System (INIS)

    Lupton, J.M.

    2000-11-01

    This thesis reports nanoengineerging of the emission and transport properties of organic light-emitting diodes (LEDs). This is achieved by a control of the electronic material properties and the photonic device properties. A novel class of conjugated materials for electroluminescence (EL) applications is presented, based on successively branching, or dendritic, materials comprising an emissive core and a shielding dendritic architecture. Exciton localisation at the centre of these dendrimers is observed in both luminescence and absorption. A detailed quantum chemical investigation using an exciton model supports these findings and accurately describes the energies and oscillator strengths of transitions in the core and branches. The dendrimer generation describes the degree of branching and gives a direct measure of the separation and interaction between chromophores. Increasing generation is found to lead to a reduction in red tail emission. This correlates with an increase in operating field and LED efficiency. Dendrimer blends with triplet harvesting dendritic phosphors are also investigated and found to exhibit unique emission properties. A numerical device model is presented, which is used to describe the temperature dependence of single layer polymer LEDs by fitting the field-dependent mobility and the barrier to hole injection. The device model is also used to obtain mobility values for the dendrimer materials, which are in excellent agreement with results obtained from time-of-flight measurements. The dendrimer generation is shown to provide a direct control of hopping mobility, which decreases by two orders of magnitude as the dendrimer generation increases from 0 to 3. The photonic properties and spontaneous emission of an LED are modified by incorporating a periodic wavelength scale microstructure into the emitting film. This is found to double the amount of light emitted with no effect on the device current. An investigation of the angular dependence

  4. Theoretical and experimental investigations of the limits to the maximum output power of laser diodes

    International Nuclear Information System (INIS)

    Wenzel, H; Crump, P; Pietrzak, A; Wang, X; Erbert, G; Traenkle, G

    2010-01-01

    The factors that limit both the continuous wave (CW) and the pulsed output power of broad-area laser diodes driven at very high currents are investigated theoretically and experimentally. The decrease in the gain due to self-heating under CW operation and spectral holeburning under pulsed operation, as well as heterobarrier carrier leakage and longitudinal spatial holeburning, are the dominant mechanisms limiting the maximum achievable output power.

  5. Next generation diode lasers with enhanced brightness

    Science.gov (United States)

    Ried, S.; Rauch, S.; Irmler, L.; Rikels, J.; Killi, A.; Papastathopoulos, E.; Sarailou, E.; Zimer, H.

    2018-02-01

    High-power diode lasers are nowadays well established manufacturing tools in high power materials processing, mainly for tactile welding, surface treatment and cladding applications. Typical beam parameter products (BPP) of such lasers range from 30 to 50 mm·mrad at several kilowatts of output power. TRUMPF offers a product line of diode lasers to its customers ranging from 150 W up to 6 kW of output power. These diode lasers combine high reliability with small footprint and high efficiency. However, up to now these lasers are limited in brightness due to the commonly used spatial and coarse spectral beam combining techniques. Recently diode lasers with enhanced brightness have been presented by use of dense wavelength multiplexing (DWM). In this paper we report on TRUMPF's diode lasers utilizing DWM. We demonstrate a 2 kW and a 4 kW system ideally suited for fine welding and scanner welding applications. The typical laser efficiency is in the range of 50%. The system offers plug and play exchange of the fiber beam delivery cable, multiple optical outputs and integrated cooling in a very compact package. An advanced control system offers flexible integration in any customer's shop floor environment and includes industry 4.0 capabilities (e.g. condition monitoring and predictive maintenance).

  6. Gamma radiation processing dosimetry with commercial silicon diodes

    International Nuclear Information System (INIS)

    Ferreira, Danilo Cardenuto

    2009-01-01

    This work envisages the development of dosimeters based on Si diodes for gamma radiation dosimetry from 1 Gy up to 100 Gy. This dose range is frequently utilized in radiation processing of crystal modifications, polymers crosslinking and biological studies carried out in the Radiation Technology Center at IPEN-CNEN/SP. The dosimeter was constructed by a commercial SFH00206 (Siemens) Si diode, operating in a photovoltaic mode, whose electrical characteristics are suitable for this application. The current generated in the device by the Cobalt-60 gamma radiation from the Irradiators types I and II was registered with a digital electrometer and stored during the exposure time. In all measurements, the current signals of the diode registered as a function of the exposure time were very stable. Furthermore, the device photocurrent was linearly dependent on the dose rate within a range of 6.1x10 -2 Gy/min up to 1.9x10 2 Gy/min. The calibration curves of the dosimeters, e.g., the average charge registered as a function of the absorbed dose were obtained by the integration of the current signals as a function of the exposure time. The results showed a linear response of the dosimeter with a correlation coefficient better than 0.998 for total absorbed dose up to 120 Gy. Finally, due to the small experimental errors 5 % it was also possible to measure the transit dose due to the movement of the Cobalto- 60 radioactive sources in irradiation facilities used in this work. (author)

  7. Suitability of integrated protection diodes from diverse semiconductor technologies

    NARCIS (Netherlands)

    van Wanum, Maurice; Lebouille, Tom; Visser, Guido; van Vliet, Frank Edward

    2009-01-01

    Abstract In this article diodes from three different semiconductor technologies are compared based on their suitability to protect a receiver. The semiconductor materials involved are silicon, gallium arsenide and gallium nitride. The diodes in the diverse semiconductor technologies themselves are

  8. Programmable current source for diode lasers stabilized optical fiber

    International Nuclear Information System (INIS)

    Gomez, J.; Camas, J.; Garcia, L.

    2012-01-01

    In this paper, we present the electronic design of a programmable stabilized current source. User can access to the source through a password, which, it has a database with the current and voltage operating points. This source was successfully used as current source in laser diode in optical fiber sensors. Variations in the laser current were carried out by a monitoring system and a control of the Direct Current (DC), which flowing through a How land source with amplifier. The laser current can be stabilized with an error percent of ± 1 μA from the threshold current (Ith) to its maximum operation current (Imax) in DC mode. The proposed design is reliable, cheap, and its output signal of stabilized current has high quality. (Author)

  9. Optical vortex generation from a diode-pumped alexandrite laser

    Science.gov (United States)

    Thomas, G. M.; Minassian, A.; Damzen, M. J.

    2018-04-01

    We present the demonstration of an optical vortex mode directly generated from a diode-pumped alexandrite slab laser, operating in the bounce geometry. This is the first demonstration of an optical vortex mode generated from an alexandrite laser or from any other vibronic laser. An output power of 2 W for a vortex mode with a ‘topological charge’ of 1 was achieved and the laser was made to oscillate with both left- and right-handed vorticity. The laser operated at two distinct wavelengths simultaneously, 755 and 759 nm, due to birefringent filtering in the alexandrite gain medium. The result offers the prospect of broadly wavelength tunable vortex generation directly from a laser.

  10. Spectral narrowing of a 980 nm tapered diode laser bar

    DEFF Research Database (Denmark)

    Vijayakumar, Deepak; Jensen, Ole Bjarlin; Lucas Leclin, Gaëlle

    2011-01-01

    High power diode laser bars are interesting in many applications such as solid state laser pumping, material processing, laser trapping, laser cooling and second harmonic generation. Often, the free running laser bars emit a broad spectrum of the order of several nanometres which limit their scope...... been "smile corrected" using individual phase masks for each emitter. The external cavity consists of the laser bar, both fast and slow axis micro collimators, smile correcting phase mask, 6.5x beam expanding lens combination, a 1200 lines/mm reflecting grating with 85% efficiency in the first order......, a slow axis focusing cylindrical lens of 40 mm focal length and an output coupler which is 10% reflective. In the free running mode, the laser emission spectrum was 5.5 nm wide at an operating current of 30A. The output power was measured to be in excess of 12W. Under the external cavity operation...

  11. High efficiency and broadband acoustic diodes

    Science.gov (United States)

    Fu, Congyi; Wang, Bohan; Zhao, Tianfei; Chen, C. Q.

    2018-01-01

    Energy transmission efficiency and working bandwidth are the two major factors limiting the application of current acoustic diodes (ADs). This letter presents a design of high efficiency and broadband acoustic diodes composed of a nonlinear frequency converter and a linear wave filter. The converter consists of two masses connected by a bilinear spring with asymmetric tension and compression stiffness. The wave filter is a linear mass-spring lattice (sonic crystal). Both numerical simulation and experiment show that the energy transmission efficiency of the acoustic diode can be improved by as much as two orders of magnitude, reaching about 61%. Moreover, the primary working band width of the AD is about two times of the cut-off frequency of the sonic crystal filter. The cut-off frequency dependent working band of the AD implies that the developed AD can be scaled up or down from macro-scale to micro- and nano-scale.

  12. Self-magnetically insulated ion diode

    International Nuclear Information System (INIS)

    VanDevender, J.; Quintenz, J.; Leeper, R.; Johnson, D.; Crow, J.

    1981-01-01

    Light ion diodes for producing 1--100 TW ion beams are required for inertial confinement fusion. The theory, numerical simulations, and experiments on a self-magnetically insulated ion diode are presented. The treatment is from the point of view of a self-magnetically insulated transmission line with an ion loss current and differs from the usual treatment of the pinched electron beam diode. The simulations show that the ratio V/IZ 0 =0.25 in such a structure with voltage V, local total current I, and local vacuum wave impedance Z 0 . The ion current density is enhanced by a factor of approximately 2 over the simple space-charge limited value. The simulation results are verified in an experiment. An analytical theory is then presented for scaling the results to produce a focused beam of protons with a power of up to 10 13 W

  13. Thermal diode made by nematic liquid crystal

    Energy Technology Data Exchange (ETDEWEB)

    Melo, Djair, E-mail: djfmelo@gmail.com [Instituto de Física, Universidade Federal de Alagoas, Av. Lourival Melo Mota, s/n, 57072-900 Maceió, AL (Brazil); Fernandes, Ivna [Instituto de Física, Universidade Federal de Alagoas, Av. Lourival Melo Mota, s/n, 57072-900 Maceió, AL (Brazil); Moraes, Fernando [Departamento de Física, CCEN, Universidade Federal da Paraíba, Caixa Postal 5008, 58051-900, João Pessoa, PB (Brazil); Departamento de Física, Universidade Federal Rural de Pernambuco, 52171-900 Recife, PE (Brazil); Fumeron, Sébastien [Institut Jean Lamour, Université de Lorraine, BP 239, Boulevard des Aiguillettes, 54506 Vandoeuvre les Nancy (France); Pereira, Erms [Escola Politécnica de Pernambuco, Universidade de Pernambuco, Rua Benfíca, 455, Madalena, 50720-001 Recife, PE (Brazil)

    2016-09-07

    This work investigates how a thermal diode can be designed from a nematic liquid crystal confined inside a cylindrical capillary. In the case of homeotropic anchoring, a defect structure called escaped radial disclination arises. The asymmetry of such structure causes thermal rectification rates up to 3.5% at room temperature, comparable to thermal diodes made from carbon nanotubes. Sensitivity of the system with respect to the heat power supply, the geometry of the capillary tube and the molecular anchoring angle is also discussed. - Highlights: • An escaped radial disclination as a thermal diode made by a nematic liquid crystal. • Rectifying effects comparable to those caused by carbon and boron nitride nanotubes. • Thermal rectification increasing with radius and decreasing with height of the tube. • Asymmetric BCs cause rectification from the spatial asymmetry produced by the escape. • Symmetric BCs provide rectifications smaller than those yields by asymmetric BCs.

  14. High Performance Single Nanowire Tunnel Diodes

    DEFF Research Database (Denmark)

    Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

    NWs were contacted in a NW-FET setup. Electrical measurements at room temperature display typical tunnel diode behavior, with a Peak-to-Valley Current Ratio (PVCR) as high as 8.2 and a peak current density as high as 329 A/cm2. Low temperature measurements show improved PVCR of up to 27.6....... is the tunnel (Esaki) diode, which provides a low-resistance connection between junctions. We demonstrate an InP-GaAs NW axial heterostructure with tunnel diode behavior. InP and GaAs can be readily n- and p-doped, respectively, and the heterointerface is expected to have an advantageous type II band alignment...

  15. Ultrafast photoconductor detector-laser-diode transmitter

    International Nuclear Information System (INIS)

    Wang, C.L.; Davis, B.A.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.

    1987-01-01

    We report the results of an experiment in which we used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When we irradiated the neutron-damaged Cr-doped GaAs detector with 17-MeV electron beams, the temporal response was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. We are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

  16. Ultrafast photoconductive detector-laser-diode transmitter

    International Nuclear Information System (INIS)

    Wang, C.L.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.; Davis, B.A.

    1987-01-01

    The authors report the results of an experiment in which they used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When they irradiated the neutron-damaged Cr-doped Ga/As detector with 17-MeV electron beams, the temporal response of was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. They are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

  17. Diode laser based light sources for biomedical applications

    DEFF Research Database (Denmark)

    Müller, André; Marschall, Sebastian; Jensen, Ole Bjarlin

    2013-01-01

    Diode lasers are by far the most efficient lasers currently available. With the ever-continuing improvement in diode laser technology, this type of laser has become increasingly attractive for a wide range of biomedical applications. Compared to the characteristics of competing laser systems, diode...... imaging. This review provides an overview of the latest development of diode laser technology and systems and their use within selected biomedical applications....

  18. Laser-diode pumped Nd:YAG lasers; Laser diode reiki Nd:YAG lasear

    Energy Technology Data Exchange (ETDEWEB)

    Yuasa, H.; Akiyama, Y.; Nakayama, M. [Toshiba Corp., Tokyo (Japan)

    2000-04-01

    Laser-diode pumped Nd:YAG lasers are expected to be applied to laser processing fields such as welding, cutting, drilling, and marking due to their potential for high efficiency and compactness. We are designing and developing laser-diode pumped Nd:YAG lasers using numerical analysis simulation techniques such as ray tracing and thermal analysis. We have succeeded in achieving a laser power of more than 3 kW with 20% efficiency, which is the best ever obtained. In addition, we have developed a laser-diode pumped green laser by second harmonic generation, for precision machining on silicon wafers. (author)

  19. The impact of plasma dynamics on the self-magnetic-pinch diode impedance

    International Nuclear Information System (INIS)

    Bennett, Nichelle; Crain, M. Dale; Droemer, Darryl W.; Gignac, Raymond E.; Molina, Isidro; Obregon, Robert; Smith, Chase C.; Wilkins, Frank L.; Welch, Dale R.; Webb, Timothy J.; Mazarakis, Michael G.; Kiefer, Mark L.; Johnston, Mark D.; Leckbee, Joshua J.; Nielsen, Dan; Romero, Tobias; Simpson, Sean; Ziska, Derek

    2015-01-01

    The self-magnetic-pinch diode is being developed as an intense electron beam source for pulsed-power-driven x-ray radiography. The basic operation of this diode has long been understood in the context of pinched diodes, including the dynamic effect that the diode impedance decreases during the pulse due to electrode plasma formation and expansion. Experiments being conducted at Sandia National Laboratories' RITS-6 accelerator are helping to characterize these plasmas using time-resolved and time-integrated camera systems in the x-ray and visible. These diagnostics are analyzed in conjunction with particle-in-cell simulations of anode plasma formation and evolution. The results confirm the long-standing theory of critical-current operation with the addition of a time-dependent anode-cathode gap length. The results may suggest that anomalous impedance collapse is driven by increased plasma radial drift, leading to larger-than-average ion v r × B θ acceleration into the gap

  20. Intensity and frequency stabilization of a laser diode by simultaneously controlling its temperature and current

    Science.gov (United States)

    Mu, Weiwei; Hu, Zhaohui; Wang, Jing; Zhou, Binquan

    2017-10-01

    Nuclear magnetic resonance gyroscope (NMRG) detects the angular velocity of the vehicle utilizing the interaction between the laser beam and the alkali metal atoms along with the noble gas atoms in the alkali vapor cell. In order to reach high precision inertial measurement target, semiconductor laser in NMRG should have good intensity and frequency stability. Generally, laser intensity and frequency are stabilized separately. In this paper, a new method to stabilize laser intensity and frequency simultaneously with double-loop feedback control is presented. Laser intensity is stabilized to the setpoint value by feedback control of laser diode's temperature. Laser frequency is stabilized to the Doppler absorption peak by feedback control of laser diode's current. The feedback control of current is a quick loop, hence the laser frequency stabilize quickly. The feedback control of temperature is a slow loop, hence the laser intensity stabilize slowly. With the feedback control of current and temperature, the laser intensity and frequency are stabilized finally. Additionally, the dependence of laser intensity and frequency on laser diode's current and temperature are analyzed, which contributes to choose suitable operating range for the laser diode. The advantage of our method is that the alkali vapor cell used for stabilizing laser frequency is the same one as the cell used for NMRG to operate, which helps to miniaturize the size of NMRG prototype. In an 8-hour continuous measurement, the long-term stability of laser intensity and frequency increased by two orders of magnitude and one order of magnitude respectively.

  1. An all-silicon passive optical diode.

    Science.gov (United States)

    Fan, Li; Wang, Jian; Varghese, Leo T; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M; Qi, Minghao

    2012-01-27

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.

  2. Equilibrium double layers in extended Pierce diodes

    International Nuclear Information System (INIS)

    Ciubotariu-Jassy, C.I.

    1992-01-01

    The extended Pierce diode is similar to the standard (or classical) Pierce diode, but has passive circuit elements in place of the short circuit between the electrodes. This device is important as an approximation to real bounded plasma systems. It consists of two parallel plane electrodes (an emitter located at x=0 and a collector located at x=l) and a collisionless cold electron beam travelling between them. The electrons are neutralized by a background of comoving massive ions. This situation is analysed in this paper and new equilibrium double layer (DL) plasma structures are obtained. (author) 6 refs., 3 figs

  3. Diode and method of making the same

    Energy Technology Data Exchange (ETDEWEB)

    Dickerson, Jeramy Ray; Wierer, Jr., Jonathan; Kaplar, Robert; Allerman, Andrew A.

    2018-03-13

    A diode includes a second semiconductor layer over a first semiconductor layer. The diode further includes a third semiconductor layer over the second semiconductor layer, where the third semiconductor layer includes a first semiconductor element over the second semiconductor layer. The third semiconductor layer additionally includes a second semiconductor element over the second semiconductor layer, wherein the second semiconductor element surrounds the first semiconductor element. Further, the third semiconductor layer includes a third semiconductor element over the second semiconductor element. Furthermore, a hole concentration of the second semiconductor element is less than a hole concentration of the first semiconductor element.

  4. Polycrystalline Diamond Schottky Diodes and Their Applications.

    Science.gov (United States)

    Zhao, Ganming

    In this work, four-hot-filament CVD techniques for in situ boron doped diamond synthesis on silicon substrates were extensively studied. A novel tungsten filament shape and arrangement used to obtain large-area, uniform, boron doped polycrystalline diamond thin films. Both the experimental results and radiative heat transfer analysis showed that this technique improved the uniformity of the substrate temperature. XRD, Raman and SEM studies indicate that large area, uniform, high quality polycrystalline diamond films were obtained. Schottky diodes were fabricated by either sputter deposition of silver or thermal evaporation of aluminum or gold, on boron doped diamond thin films. High forward current density and a high forward-to-reverse current ratio were exhibited by silver on diamond Schottky diodes. Schottky barrier heights and the majority carrier concentrations of both aluminum and gold contacted diodes were determined from the C-V measurements. Furthermore, a novel theoretical C-V-f analysis of deep level boron doped diamond Schottky diodes was performed. The analytical results agree well with the experimental results. Compressive stress was found to have a large effect on the forward biased I-V characteristics of the diamond Schottky diodes, whereas the effect on the reverse biased characteristics was relatively small. The stress effect on the forward biased diamond Schottky diode was attributed to piezojunction and piezoresistance effects. The measured force sensitivity of the diode was as high as 0.75 V/N at 1 mA forward bias. This result shows that CVD diamond device has potential for mechanical transducer applications. The quantitative photoresponse characteristics of the diodes were studied in the spectral range of 300 -1050 nm. Semi-transparent gold contacts were used for better photoresponse. Quantum efficiency as high as 50% was obtained at 500 nm, when a reverse bias of over 1 volt was applied. The Schottky barrier heights between either gold or

  5. Cryogenic thermometry with a common diode: type BAS16

    NARCIS (Netherlands)

    Rijpma, A.P.; ter Brake, Hermanus J.M.

    2006-01-01

    Cryogenic test experiments often require a large number of temperatures to be monitored. In order to reduce cost, we investigated the feasibility of low-cost common diodes. We chose the Philips BAS16 diode in a type SOT23 package. By means of Stycast 2850FT, these diodes were glued into alumina

  6. Cryogenic thermometry with a common diode: Type BAS16

    NARCIS (Netherlands)

    Rijpma, A.P.; Brake, ter H.J.M.

    2006-01-01

    Cryogenic test expts. often require a large no. of temps. to be monitored. In order to reduce cost, we investigated the feasibility of low-cost common diodes. We chose the Philips BAS16 diode in a type SOT23 package. By means of Stycast 2850FT, these diodes were glued into alumina holders. In total,

  7. Linear variable voltage diode capacitor and adaptive matching networks

    NARCIS (Netherlands)

    Larson, L.E.; De Vreede, L.C.N.

    2006-01-01

    An integrated variable voltage diode capacitor topology applied to a circuit providing a variable voltage load for controlling variable capacitance. The topology includes a first pair of anti-series varactor diodes, wherein the diode power-law exponent n for the first pair of anti-series varactor

  8. High power diode lasers converted to the visible

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Hansen, Anders Kragh; Andersen, Peter E.

    2017-01-01

    High power diode lasers have in recent years become available in many wavelength regions. However, some spectral regions are not well covered. In particular, the visible spectral range is lacking high power diode lasers with good spatial quality. In this paper, we highlight some of our recent...... results in nonlinear frequency conversion of high power near infrared diode lasers to the visible spectral region....

  9. Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Martens, M.; Kuhn, C.; Ziffer, E.; Simoneit, T.; Rass, J.; Wernicke, T. [Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Kueller, V.; Knauer, A.; Einfeldt, S.; Weyers, M. [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, M. [Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2016-04-11

    Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fractions are compared. The heterostructures contain all elements that are needed for a current-injection laser diode including cladding and waveguide layers as well as an AlGaN quantum well active region emitting near 270 nm. We found that with increasing aluminum content in the p-AlGaN cladding, the diode turn-on voltage increases, while the series resistance slightly decreases. By introducing an SPSL instead of bulk layers, the operating voltage is significantly reduced. A gain guided broad area laser diode structure with transparent p-Al{sub 0.70}Ga{sub 0.30}N waveguide layers and a transparent p-cladding with an average aluminum content of 81% was designed for strong confinement of the transverse optical mode and low optical losses. Using an optimized SPSL, this diode could sustain current densities of more than 4.5 kA/cm{sup 2}.

  10. Fabrication and characterization of magnetically tunable metal-semiconductor schottky diode using barium hexaferrite thin film on gold

    Science.gov (United States)

    Kaur, Jotinder; Sharma, Vinay; Sharma, Vipul; Veerakumar, V.; Kuanr, Bijoy K.

    2016-05-01

    Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/silicon substrate was used to grow the BaM thin films (100-150 nm) using pulsed laser deposition. I-V characteristics were measured on the Au/BaM structure sweeping the voltage from ±5 volts. The forward and reverse bias current-voltage curves show diode like rectifying characteristics. The threshold voltage decreases while the output current increases with increase in the applied external magnetic field showing that the I-V characteristics of the BaM based Schottky junction diodes can be tuned by external magnetic field. It is also demonstrated that, the fabricated Schottky diode can be used as a half-wave rectifier, which could operate at high frequencies in the range of 1 MHz compared to the regular p-n junction diodes, which rectify below 10 kHz. In addition, it is found that above 1 MHz, Au/BaM diode can work as a rectifier as well as a capacitor filter, making the average (dc) voltage much larger.

  11. Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

    International Nuclear Information System (INIS)

    Martens, M.; Kuhn, C.; Ziffer, E.; Simoneit, T.; Rass, J.; Wernicke, T.; Kueller, V.; Knauer, A.; Einfeldt, S.; Weyers, M.; Kneissl, M.

    2016-01-01

    Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fractions are compared. The heterostructures contain all elements that are needed for a current-injection laser diode including cladding and waveguide layers as well as an AlGaN quantum well active region emitting near 270 nm. We found that with increasing aluminum content in the p-AlGaN cladding, the diode turn-on voltage increases, while the series resistance slightly decreases. By introducing an SPSL instead of bulk layers, the operating voltage is significantly reduced. A gain guided broad area laser diode structure with transparent p-Al_0_._7_0Ga_0_._3_0N waveguide layers and a transparent p-cladding with an average aluminum content of 81% was designed for strong confinement of the transverse optical mode and low optical losses. Using an optimized SPSL, this diode could sustain current densities of more than 4.5 kA/cm"2.

  12. Kerr-Lens Mode-Locked Femtosecond Yb:GdYSiO5 Laser Directly Pumped by a Laser Diode

    Directory of Open Access Journals (Sweden)

    Jiangfeng Zhu

    2015-10-01

    Full Text Available We demonstrate the first Kerr-lens mode-locked operation in a diode-pumped Yb:GdYSiO5 oscillator. Under a diode pump power of 5 W, 141 fs pulses with an average power of 237 mW were obtained at a repetition rate of 118 MHz. The central wavelength was at 1094 nm with a bandwidth of 10.1 nm. Shorter pulses were obtained by adjusting the cavity to operate at a shorter wavelength, resulting in 55 fs pulse duration at the central wavelength of 1054 nm with a bandwidth of 23.5 nm.

  13. Novel recycle technology for recovering rare metals (Ga, In) from waste light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Zhan, Lu; Xia, Fafa; Ye, Qiuyu; Xiang, Xishu; Xie, Bing, E-mail: bxie@des.ecnu.edu.cn

    2015-12-15

    Highlights: • Rare metals (Ga, In) are separated and recycled from waste light-emitting diodes. • Pyrolysis, physical disaggregation and vacuum metallurgy separation are proposed. • There is no hazardous materials produced in this process. - Abstract: This work develops a novel process of recycling rare metals (Ga, In) from waste light-emitting diodes using the combination of pyrolysis, physical disaggregation methods and vacuum metallurgy separation. Firstly, the pure chips containing InGaN/GaN are adopted to study the vacuum separation behavior of rare metals, which aims to provide the theoretical foundation for recycling gallium and indium from waste light-emitting diodes. In order to extract the rare-metal-rich particles from waste light-emitting diodes, pyrolysis and physical disaggregation methods (crushing, screening, grinding and secondly screening) are studied respectively, and the operating parameters are optimized. With low boiling points and high saturation vapor pressures under vacuum, gallium and indium are separated from rare-metal-rich particles by the process of evaporation and condensation. By reference to the separating parameters of pure chips, gallium and indium in waste light-emitting diodes are recycled with the recovery efficiencies of 93.48% and 95.67% under the conditions as follows: heating temperature of 1373 K, vacuum pressure of 0.01–0.1 Pa, and holding time of 60 min. There are no secondary hazardous materials generated in the whole processes. This work provides an efficient and environmentally friendly process for recycling rare metals from waste light-emitting diodes.

  14. Tunable Schottky diodes fabricated from crossed electrospun SnO{sub 2}/PEDOT-PSSA nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Carrasquillo, Katherine V. [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00792 (Puerto Rico); Pinto, Nicholas J., E-mail: nicholas.pinto@upr.edu [Department of Physics and Electronics, University of Puerto Rico-Humacao, Humacao, PR 00792 (Puerto Rico)

    2012-06-25

    Graphical abstract: Crossed SnO{sub 2}/PEDOT-PSSA nanoribbon Schottky diodes. Highlight: Black-Right-Pointing-Pointer An inexpensive electrospinning technique is used to fabricate crossed nanoribbons of n-doped tin oxide and p-PEDOT. Black-Right-Pointing-Pointer Each intersection is a localized Schottky diode that is completely exposed to the environment after electrodes deposition. Black-Right-Pointing-Pointer This makes it useful as a gas and light sensor. Black-Right-Pointing-Pointer In addition, the ability to tune the diode parameters via a back gate truly makes this device multifunctional. Black-Right-Pointing-Pointer A half wave rectifier has been demonstrated with this device under UV illumination. - Abstract: Schottky diodes have been fabricated on doped Si/SiO{sub 2} substrates in air, by simply crossing individual electrospun tin oxide (SnO{sub 2}) and poly(3,4-ethylenedioxythiophene)/poly(styrene sulfonate) (PEDOT-PSSA) nanoribbons. The conductivity of PEDOT-PSSA was {approx}6 S/cm with no observable field effect, while SnO{sub 2} exhibited n-doped field effect behavior with a charge mobility of {approx}3.1 cm{sup 2}/V-s. The diodes operate in air or in vacuum, under ambient illumination or in the dark, with low turn-on voltages and device parameters that are tunable via a back gate bias or a UV light source. Their unique design involves a highly localized active region that is completely exposed to the surrounding environment, making them potentially attractive for use as sensors. The standard thermionic emission model of a Schottky junction was applied to analyze the forward bias diode characteristics and was successfully tested as a half wave rectifier.

  15. 700 W blue fiber-coupled diode-laser emitting at 450 nm

    Science.gov (United States)

    Balck, A.; Baumann, M.; Malchus, J.; Chacko, R. V.; Marfels, S.; Witte, U.; Dinakaran, D.; Ocylok, S.; Weinbach, M.; Bachert, C.; Kösters, A.; Krause, V.; König, H.; Lell, A.; Stojetz, B.; Löffler, A.; Strauss, U.

    2018-02-01

    A high-power blue laser source was long-awaited for processing materials with low absorption in the near infrared (NIR) spectral range like copper or gold. Due to the huge progress of GaN-based semiconductors, the performance of blue diode-lasers has made a major step forward recently. With the availability of unprecedented power levels at cw-operating blue diode-lasers emitting at 450 nm, it was possible to set up a high-power diode-laser in the blue spectral range to address these conventional laser applications and probably beyond that to establish completely new utilizations for lasers. Within the scope of the research project "BlauLas", funded within the German photonic initiative "EFFILAS" [8] by the German Federal Ministry of Education and Research (BMBF), Laserline in cooperation with OSRAM aims to realize a cw fiber-coupled diode-laser exceeding 1 kW blue laser power. In this paper the conceptual design and experimental results of a 700 W blue fiber-coupled diode-laser are presented. Initially a close look had to be taken on the mounting techniques of the semiconductors to serve the requirements of the GaN laser diodes. Early samples were used for extensive long term tests to investigate degradation processes. With first functional laser-modules we set up fiber-coupled laser-systems for further testing. Besides adaption of well-known optical concepts a main task within the development of the laser system was the selection and examination of suitable materials and assembling in order to minimize degradation and reach adequate lifetimes. We realized R&D blue lasersystems with lifetimes above 5,000 h, which enable first application experiments on processing of various materials as well as experiments on conversion to white-light.

  16. [Endonasal versus trans-canalicular endoscopic dacriocystorhinostomy using diode laser. Surgical techniques and outcomes].

    Science.gov (United States)

    Piédrola Maroto, David; Franco Sánchez, Javier; Reyes Eldblom, Robin; Monje Vega, Elena; Conde Jiménez, Manuel; Ortiz Rueda, Manuel

    2008-01-01

    To evaluate the benefits and disadvantages of the endoscopic endonasal versus transcanalicular approaches using diode laser, and to compare their clinical outcomes. A total of 127 patients were operated on, 80 of them with the endonasal approach (Group I) and 47 with the transcanalicular technique (Group II). Epiphora improved completely in 67 patients in Group I (83.7 %) while the other 13 (16.2 %) continued to present the same symptoms. In Group II, a successful result was achieved in 39 patients (82.9 %) and 8 (17 %) of them had to be re-operated because of the persistence of epiphora. The surgical outcomes are similar with both laser techniques. The main advantages of using diode laser are that it does not require general anaesthesia, the lower intra- and peri-operative morbidity, the lack of nasal packing and the greater ease of performing additional interventions if it fails. The only real disadvantage of laser procedures is the high cost.

  17. Comparison of diode laser and Er:YAG lasers in the treatment of ankyloglossia.

    Science.gov (United States)

    Aras, Mutan Hamdi; Göregen, Mustafa; Güngörmüş, Metin; Akgül, Hayati Murat

    2010-04-01

    The purpose of this study was to compare the tolerance of lingual frenectomy with regard to a local anesthesia requirement and comparison of postsurgical discomfort experienced by patients operated on with both diode and erbium:yttrium-aluminium-garnet (Er:YAG) lasers. Ankyloglossia, commonly known as tongue-tie, is a congenital oral anomaly characterized by a short lingual frenulum. A short lingual frenulum may contribute to feeding, speech, and mechanical tongue problems. Sixteen referred patients with tongue mobility complaints were included in this study. A GaAlAs laser device with a continuous wavelength of 808 nm was used in the diode group. Frenulums were incised by applying 2 W of laser power. The Er:YAG laser device with a continuous wavelength of 2940 nm was used in the Er:YAG group. Frenulums were incised by applying 1 W of laser power. The acceptability of the lingual frenectomy without local anesthesia and the degree of the postsurgical discomfort were evaluated. Although the majority of patients (six) could be operated on without local anesthesia in the Er:YAG group, all patients could not be operated on without local anesthetic agent in the diode group. There were no differences between the two groups with regard to pain, chewing, and speaking on the first or seventh day after surgery, whereas patients had more pain in the Er:YAG group than in the diode group the first 3 h after surgery. The results indicate that only the Er:YAG laser can be used for lingual frenectomy without local anesthesia, and there was no difference between the two groups regarding the degree of the postsurgical discomfort except in the first 3 h. In conclusion, these results indicate that the Er:YAG laser is more advantageous than the diode laser in minor soft-tissue surgery because it can be performed without local anesthesia and with only topical anesthesia.

  18. Dynamics of a relativistic electron beam in a high-current diode with a knife-edge cathode

    International Nuclear Information System (INIS)

    Babykin, V.M.; Gordeev, A.V.; Golovin, G.T.; Korolev, V.D.; Kopchikov, A.V.; Tulupov, M.V.; Chernenko, A.S.; Shuvaev, V.Yu.

    1991-01-01

    For a number of practical applications, e.g., producing discharges in large volumes in order to pump gas lasers and for short x-ray pulses, it is necessary to generate electron beams in megamp range with electron energies from hundreds of kilovolts to several megavolts. It has been possible to obtain high currents (I ± 1 MA) by using diodes with knife-edge cathodes. Knife-edge diodes have an important advantage over the parapotential type because the ion current in them comprises a relatively small fraction of the total current. This is because the electron path in the accelerating gap of knife-edge diodes is quite short in comparison with that in high-current parapotential diodes. From the point of view of applying ribbon-shaped or narrow electron beams, the important problems are in measuring the current-voltage characteristics of the diodes and determining the dynamics of the energy spectrum and the angular spread of the electrons. The generation of an electron beam with a current ∼130 kA and pulse length ∼60 ns is studied. The current-voltage characteristics of knife-edge diodes with various geometries, the dynamics of the angular spread, and the beam structure are studied. As a result of the study of the REB dynamics it is found that the operation of the diode with these experiments can be approximated by a proposed formula which includes the finite thickness of the knife-edge cathode and the motion of the plasma and ions in the discharge gap. Breaking up of the beam into individual current-carrying channels is observed with the characteristic scale ∼1-2 mm. It is noted that for the diode geometry with a knife-edge cathode, when the magnetic field changes sign and passes through zero, an instability can exist which is analogous to the dissipative tearing instability

  19. Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide

    Science.gov (United States)

    Khramtsov, Igor A.; Vyshnevyy, Andrey A.; Fedyanin, Dmitry Yu.

    2018-03-01

    Practical applications of quantum information technologies exploiting the quantum nature of light require efficient and bright true single-photon sources which operate under ambient conditions. Currently, point defects in the crystal lattice of diamond known as color centers have taken the lead in the race for the most promising quantum system for practical non-classical light sources. This work is focused on a different quantum optoelectronic material, namely a color center in silicon carbide, and reveals the physics behind the process of single-photon emission from color centers in SiC under electrical pumping. We show that color centers in silicon carbide can be far superior to any other quantum light emitter under electrical control at room temperature. Using a comprehensive theoretical approach and rigorous numerical simulations, we demonstrate that at room temperature, the photon emission rate from a p-i-n silicon carbide single-photon emitting diode can exceed 5 Gcounts/s, which is higher than what can be achieved with electrically driven color centers in diamond or epitaxial quantum dots. These findings lay the foundation for the development of practical photonic quantum devices which can be produced in a well-developed CMOS compatible process flow.

  20. Flexible diodes for radio frequency (RF) electronics: a materials perspective

    KAUST Repository

    Semple, James

    2017-10-30

    Over the last decade, there has been increasing interest in transferring the research advances in radiofrequency (RF) rectifiers, the quintessential element of the chip in the RF identification (RFID) tags, obtained on rigid substrates onto plastic (flexible) substrates. The growing demand for flexible RFID tags, wireless communications applications and wireless energy harvesting systems that can be produced at a low-cost is a key driver for this technology push. In this topical review, we summarise recent progress and status of flexible RF diodes and rectifying circuits, with specific focus on materials and device processing aspects. To this end, different families of materials (e.g. flexible silicon, metal oxides, organic and carbon nanomaterials), manufacturing processes (e.g. vacuum and solution processing) and device architectures (diodes and transistors) are compared. Although emphasis is placed on performance, functionality, mechanical flexibility and operating stability, the various bottlenecks associated with each technology are also addressed. Finally, we present our outlook on the commercialisation potential and on the positioning of each material class in the RF electronics landscape based on the findings summarised herein. It is beyond doubt that the field of flexible high and ultra-high frequency rectifiers and electronics as a whole will continue to be an active area of research over the coming years.

  1. Laser lipolysis: skin tightening in lipoplasty using a diode laser.

    Science.gov (United States)

    Wolfenson, Moisés; Hochman, Bernardo; Ferreira, Lydia Massako

    2015-05-01

    New devices have been developed for surgical repair of deformities caused by localized fat deposits associated with skin laxity. The use of these devices requires the adoption of safety parameters. The aim of this study was to investigate skin tightening by laser lipolysis, using a dual-wavelength diode laser. This prospective, cross-sectional study was conducted between June of 2008 and July of 2010 with 41 consecutive patients who underwent laser lipolysis to correct contour deformities. Laser lipolysis was performed with a diode laser operating at two wavelengths (924 and 975 nm) controlled independently, and using three different tip lengths, allowing treatment of small, medium, and large areas of adipose tissue. The procedure was performed under local anesthesia in a surgical setting. To calculate the optimal cumulative energy, a total energy dose of 5 kJ/10 × 10-cm skin area was used as a safety parameter to prevent treatment complications. The circumferences of body regions were measured preoperatively, immediately after surgery, and 90 days later. Measurements were compared using the Wilcoxon test at a significance level of 0.05 (p Laser lipolysis results in progressive skin tightening over time. Therapeutic, IV.

  2. Predicted radiation environment of the Saturn baseline diode

    International Nuclear Information System (INIS)

    Halbleib, J.A.; Lee, J.R.

    1987-09-01

    Coupled electron/photon Monte Carlo radiation transport was used to predict the radiation environment of the Saturn accelerator for the baseline diode design. The x-ray output has been calculated, as well as energy deposition in CaF 2 thermoluminescent dosimetry and silicon. It is found that the design criteria for the radiation environment will be met and that approximately 10 kJ of x rays will be available for simulation experiments, if the diode provides a nominal beam of 2.0-MeV electrons for 20 ns with a peak current of 12.5 MA. The penalty in dose and x-ray output for operating below the nominal energy in order to obtain a softer spectrum is quantified. The penalty for using excessive electron equilibration in the standard packaging of the thermoluminescent dosimeters is shown to be negligible. An intrinsic lack of electron equilibration for silicon elements of components and subsystems is verified for Saturn environments, demonstrating the ambiguity of design criteria based on silicon deposition. Validation of an efficient next-event-estimator method for predicting energy deposition in equilibrated detectors/dosimetry is confirmed. Finally, direct-electron depositions in excess of 1 kJ/g are shown to be easily achievable. 34 refs., 30 figs

  3. Flexible diodes for radio frequency (RF) electronics: a materials perspective

    KAUST Repository

    Semple, James; Georgiadou, Dimitra G; Wyatt-Moon, Gwenhivir; Gelinck, Gerwin; Anthopoulos, Thomas D.

    2017-01-01

    Over the last decade, there has been increasing interest in transferring the research advances in radiofrequency (RF) rectifiers, the quintessential element of the chip in the RF identification (RFID) tags, obtained on rigid substrates onto plastic (flexible) substrates. The growing demand for flexible RFID tags, wireless communications applications and wireless energy harvesting systems that can be produced at a low-cost is a key driver for this technology push. In this topical review, we summarise recent progress and status of flexible RF diodes and rectifying circuits, with specific focus on materials and device processing aspects. To this end, different families of materials (e.g. flexible silicon, metal oxides, organic and carbon nanomaterials), manufacturing processes (e.g. vacuum and solution processing) and device architectures (diodes and transistors) are compared. Although emphasis is placed on performance, functionality, mechanical flexibility and operating stability, the various bottlenecks associated with each technology are also addressed. Finally, we present our outlook on the commercialisation potential and on the positioning of each material class in the RF electronics landscape based on the findings summarised herein. It is beyond doubt that the field of flexible high and ultra-high frequency rectifiers and electronics as a whole will continue to be an active area of research over the coming years.

  4. Monolayer MoS{sub 2} self-switching diodes

    Energy Technology Data Exchange (ETDEWEB)

    Al-Dirini, Feras, E-mail: alf@unimelb.edu.au; Hossain, Md Sharafat [Department of Electrical and Electronic Engineering, University of Melbourne, Victoria (Australia); Centre for Neural Engineering, University of Melbourne, Victoria (Australia); Victorian Research Laboratory, National ICT Australia, West Melbourne, Victoria (Australia); Hossain, Faruque M.; Skafidas, Efstratios [Department of Electrical and Electronic Engineering, University of Melbourne, Victoria (Australia); Centre for Neural Engineering, University of Melbourne, Victoria (Australia); Mohammed, Mahmood A. [Princess Sumaya University for Technology, Amman (Jordan); Nirmalathas, Ampalavanapillai [Department of Electrical and Electronic Engineering, University of Melbourne, Victoria (Australia); Melbourne Networked Society Institute (MNSI), University of Melbourne, Victoria (Australia)

    2016-01-28

    This paper presents a new molybdenum disulphide (MoS{sub 2}) nanodevice that acts as a two-terminal field-effect rectifier. The device is an atomically-thin two-dimensional self-switching diode (SSD) that can be realized within a single MoS{sub 2} monolayer with very minimal process steps. Quantum simulation results are presented confirming the device's operation as a diode and showing strong non-linear I-V characteristics. Interestingly, the device shows p-type behavior, in which conduction is dominated by holes as majority charge carriers and the flow of reverse current is enhanced, while the flow of forward current is suppressed, in contrast to monolayer graphene SSDs, which behave as n-type devices. The presence of a large bandgap in monolayer MoS{sub 2} results in strong control over the channel, showing complete channel pinch-off in forward conduction, which was confirmed with transmission pathways plots. The device exhibited large leakage tunnelling current through the insulating trenches, which may have been due to the lack of passivation; nevertheless, reverse current remained to be 6 times higher than forward current, showing strong rectification. The effect of p-type substitutional channel doping of sulphur with phosphorus was investigated and showed that it greatly enhances the performance of the device, increasing the reverse-to-forward current rectification ratio more than an order of magnitude, up to a value of 70.

  5. Self-Aligned van der Waals Heterojunction Diodes and Transistors.

    Science.gov (United States)

    Sangwan, Vinod K; Beck, Megan E; Henning, Alex; Luo, Jiajia; Bergeron, Hadallia; Kang, Junmo; Balla, Itamar; Inbar, Hadass; Lauhon, Lincoln J; Hersam, Mark C

    2018-02-14

    A general self-aligned fabrication scheme is reported here for a diverse class of electronic devices based on van der Waals materials and heterojunctions. In particular, self-alignment enables the fabrication of source-gated transistors in monolayer MoS 2 with near-ideal current saturation characteristics and channel lengths down to 135 nm. Furthermore, self-alignment of van der Waals p-n heterojunction diodes achieves complete electrostatic control of both the p-type and n-type constituent semiconductors in a dual-gated geometry, resulting in gate-tunable mean and variance of antiambipolar Gaussian characteristics. Through finite-element device simulations, the operating principles of source-gated transistors and dual-gated antiambipolar devices are elucidated, thus providing design rules for additional devices that employ self-aligned geometries. For example, the versatility of this scheme is demonstrated via contact-doped MoS 2 homojunction diodes and mixed-dimensional heterojunctions based on organic semiconductors. The scalability of this approach is also shown by fabricating self-aligned short-channel transistors with subdiffraction channel lengths in the range of 150-800 nm using photolithography on large-area MoS 2 films grown by chemical vapor deposition. Overall, this self-aligned fabrication method represents an important step toward the scalable integration of van der Waals heterojunction devices into more sophisticated circuits and systems.

  6. Flexible diodes for radio frequency (RF) electronics: a materials perspective

    Science.gov (United States)

    Semple, James; Georgiadou, Dimitra G.; Wyatt-Moon, Gwenhivir; Gelinck, Gerwin; Anthopoulos, Thomas D.

    2017-12-01

    Over the last decade, there has been increasing interest in transferring the research advances in radiofrequency (RF) rectifiers, the quintessential element of the chip in the RF identification (RFID) tags, obtained on rigid substrates onto plastic (flexible) substrates. The growing demand for flexible RFID tags, wireless communications applications and wireless energy harvesting systems that can be produced at a low-cost is a key driver for this technology push. In this topical review, we summarise recent progress and status of flexible RF diodes and rectifying circuits, with specific focus on materials and device processing aspects. To this end, different families of materials (e.g. flexible silicon, metal oxides, organic and carbon nanomaterials), manufacturing processes (e.g. vacuum and solution processing) and device architectures (diodes and transistors) are compared. Although emphasis is placed on performance, functionality, mechanical flexibility and operating stability, the various bottlenecks associated with each technology are also addressed. Finally, we present our outlook on the commercialisation potential and on the positioning of each material class in the RF electronics landscape based on the findings summarised herein. It is beyond doubt that the field of flexible high and ultra-high frequency rectifiers and electronics as a whole will continue to be an active area of research over the coming years.

  7. A compact frequency stabilized telecom laser diode for space applications

    Science.gov (United States)

    Philippe, C.; Holleville, D.; Le Targat, R.; Wolf, P.; Leveque, T.; Le Goff, R.; Martaud, E.; Acef, O.

    2017-09-01

    We report on a Telecom laser diode (LD) frequency stabilization to a narrow iodine hyperfine line in the green range, after frequency tripling process using fibered nonlinear waveguide PPLN crystals. We have generated up to 300 mW optical power in the green range ( 514 nm) from 800 mW of infrared power ( 1542 nm), corresponding to a nonlinear conversion efficiency h = P3?/P? 36%. Less than 10 mW of the generated green power are used for Doppler-free spectroscopy of 127I2 molecular iodine, and -therefore- for the frequency stabilization purpose. The frequency tripling optical setup is very compact (test the potential of this new frequency standard based on the couple "1.5 ?m laser / iodine molecule". We have already demonstrated a preliminary frequency stability of 4.8 x 10-14 ? -1/2 with a minimum value of 6 x 10-15 reached after 50 s of integration time, conferred to a laser diode operating at 1542.1 nm. We focus now our efforts to expand the frequency stability to a longer integration time in order to meet requirements of many space experiments, such earth gravity missions, inters satellites links or space to ground communications. Furthermore, we investigate the potential of a new approach based on frequency modulation technique (FM), associated to a 3rd harmonic detection of iodine lines to increase the compactness of the optical setup.

  8. Final report for EDI energy conservation with diode light; Slutrapport for EDI energibesparelser med diodelys

    Energy Technology Data Exchange (ETDEWEB)

    NONE

    2006-07-01

    The aim of this project has been to develop technological knowledge and a competence platform for utilization of new light emitting diode technology for general lighting purposes. Furthermore the project has aimed at developing a 3 W light diode bulb to replace 15-20 W filament bulbs and halogen spotlights, and thereby demonstrating a large energy conservation potential in the use of LED technology for lighting purposes. (BA)

  9. Ion current reduction in pinched electron beam diodes

    International Nuclear Information System (INIS)

    Quintenz, J.P.; Poukey, J.W.

    1977-01-01

    A new version of a particle-in-cell diode code has been written which permits the accurate treatment of higher-current diodes with greater physical dimensions. Using this code, we have studied ways to reduce the ion current in large-aspect-ratio pinched electron beam diodes. In particular, we find that allowing the ions to reflex in such diodes lowers the ion to electron current ratio considerably. In a 3-MV R/d=24 case this ratio was lowered by a factor of 6--8 compared with the corresponding nonreflexing-ion diode, while still producing a superpinched electron beam

  10. Manufacture of axially insulated large-area diodes

    International Nuclear Information System (INIS)

    Ma Weiyi; Zhou Kungang; Wang Youtian; Zhang Dong; Shan Yusheng; Wang Naiyan

    1999-01-01

    The author describes the design and construction of the axially insulated large-area diodes used in the 'Heaven-1'. The four axially insulated large-area diodes are connected to the 10 ohm pulse transmission lines via the vacuum feed through tubes. The experimental results with the diodes are given. The diodes can steadily work at the voltage of 650 kV, and the diode current density is about 80 A per cm 2 with a pulse width of 220 ns. The electron beams with a total energy of 25 kJ are obtained

  11. Spin-current diode with a ferromagnetic semiconductor

    International Nuclear Information System (INIS)

    Sun, Qing-Feng; Xie, X. C.

    2015-01-01

    Diode is a key device in electronics: the charge current can flow through the device under a forward bias, while almost no current flows under a reverse bias. Here, we propose a corresponding device in spintronics: the spin-current diode, in which the forward spin current is large but the reversed one is negligible. We show that the lead/ferromagnetic quantum dot/lead system and the lead/ferromagnetic semiconductor/lead junction can work as spin-current diodes. The spin-current diode, a low dissipation device, may have important applications in spintronics, as the conventional charge-current diode does in electronics

  12. Highly efficient silicon light emitting diode

    NARCIS (Netherlands)

    Le Minh, P.; Holleman, J.; Wallinga, Hans

    2002-01-01

    In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a

  13. The Fuge Tube Diode Array Spectrophotometer

    Science.gov (United States)

    Arneson, B. T.; Long, S. R.; Stewart, K. K.; Lagowski, J. J.

    2008-01-01

    We present the details for adapting a diode array UV-vis spectrophotometer to incorporate the use of polypropylene microcentrifuge tubes--fuge tubes--as cuvettes. Optical data are presented validating that the polyethylene fuge tubes are equivalent to the standard square cross section polystyrene or glass cuvettes generally used in…

  14. Tunnel Diode Discriminator with Fixed Dead Time

    DEFF Research Database (Denmark)

    Diamond, J. M.

    1965-01-01

    A solid state discriminator for the range 0.4 to 10 V is described. Tunnel diodes are used for the discriminator element and in a special fixed dead time circuit. An analysis of temperature stability is presented. The regulated power supplies are described, including a special negative resistance...

  15. Entangled Light Emission From a Diode

    International Nuclear Information System (INIS)

    Stevenson, R. M.; Shields, A. J.; Salter, C. L.; Farrer, I.; Nicoll, C. A.; Ritchie, D. A.

    2011-01-01

    Electrically-driven entangled photon generation is demonstrated for the first time using a single semiconductor quantum dot embedded in a light emitting diode structure. The entanglement fidelity is shown to be of sufficient quality for applications such as quantum key distribution.

  16. A CW Gunn diode bistable switching element.

    Science.gov (United States)

    Hurtado, M.; Rosenbaum, F. J.

    1972-01-01

    Experiments with a current-controlled bistable switching element using a CW Gunn diode are reported. Switching rates of the order of 10 MHz have been obtained. Switching is initiated by current pulses of short duration (5-10 ns). Rise times of the order of several nanoseconds could be obtained.

  17. Diode for providing X-rays

    International Nuclear Information System (INIS)

    Rix, W.H.; Shannon, J.P.

    1991-01-01

    This patent describes a diode for generating X-rays and adapted for connection to a source of high electrical energy having a source of high energy electrons and a ground, the diode having a first end from which the X-rays are emitted, a second end and an axis extending between the ends. It comprises: a ring cathode connected to the electron source; an intermediate anode spaced from the ring cathode and with at least a portion of the intermediate anode being disposed between the ring cathode and the diode first end, the intermediate anode hiving means for decelerating electrons to cause the generation of X-rays emitted from the first end; an intermediate cathode disposed radially outwardly of the intermediate anode and connected thereto; and an inverse anode spaced from the intermediate cathode, the inverse and anode being disposed radially outwardly of the intermediate cathode and the inverse anode being positioned between the intermediate cathode and the diode second end

  18. Fluorescence lifetime imaging using light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Kennedy, Gordon T; Munro, Ian; Poher, Vincent; French, Paul M W; Neil, Mark A A [Blackett Laboratory, Imperial College London, South Kensington Campus, London SW7 2AZ (United Kingdom); Elson, Daniel S [Institute of Biomedical Engineering, Imperial College London, South Kensington Campus, London SW7 2AZ (United Kingdom); Hares, Jonathan D [Kentech Instruments Ltd, Unit 9, Hall Farm Workshops, South Moreton, Didcot, Oxfordshire, OX11 9AG (United Kingdom)], E-mail: gordon.kennedy@imperial.ac.uk

    2008-05-07

    We demonstrate flexible use of low cost, high-power light emitting diodes as illumination sources for fluorescence lifetime imaging (FLIM). Both time-domain and frequency-domain techniques have been implemented at wavelengths spanning the range 450-640 nm. Additionally, we demonstrate optically sectioned fluorescence lifetime imaging by combining structured illumination with frequency-domain FLIM.

  19. High-Performance Single Nanowire Tunnel Diodes

    DEFF Research Database (Denmark)

    Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

    2010-01-01

    We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27...

  20. Microring Diode Laser for THz Generation

    DEFF Research Database (Denmark)

    Mariani, S.; Andronico, A.; Favero, I.

    2013-01-01

    We report on the modeling and optical characterization of AlGaAs/InAs quantum-dot microring diode lasers designed for terahertz (THz) difference frequency generation (DFG) between two whispering gallery modes (WGMs) around 1.3 $\\mu$m. In order to investigate the spectral features of this active...

  1. Spectral Narrowing of a Varactor-Integrated Resonant-Tunneling-Diode Terahertz Oscillator by Phase-Locked Loop

    Science.gov (United States)

    Ogino, Kota; Suzuki, Safumi; Asada, Masahiro

    2017-12-01

    Spectral narrowing of a resonant-tunneling-diode (RTD) terahertz oscillator, which is useful for various applications of terahertz frequency range, such as an accurate gas spectroscopy, a frequency reference in various communication systems, etc., was achieved with a phase-locked loop system. The oscillator is composed of an RTD, a slot antenna, and a varactor diode for electrical frequency tuning. The output of the RTD oscillating at 610 GHz was down-converted to 400 MHz by a heterodyne detection. The phase noise was transformed to amplitude noise by a balanced mixer and fed back into the varactor diode. The loop filter for a stable operation is discussed. The spectral linewidth of 18.6 MHz in free-running operation was reduced to less than 1 Hz by the feedback.

  2. BPW34 Commercial p-i-n Diodes for High-Level 1-MeV Neutron Equivalent Fluence Monitoring

    CERN Document Server

    Ravotti, F; Moll, M; Saigne, F

    2008-01-01

    The BPW34 p-i-n diode was characterized at CERN in view of its utilization as radiation monitor at the LHC to cover the broad 1-MeV neutron equivalent fluence (Phieq) range expected for the LHC machine and experiments during operation. Electrical measurements for both forward and reverse bias were used to characterize the device and to understand its behavior under irradiation. When the device is powered forward, a sensitivity to fast hadrons for Phieq > 2 times1012 cm-2 has been observed. With increasing particle fluences the forward I- V characteristics of the diode shifts towards higher voltages. At Phieq > 3times1013 cm-2, the forward characteristic starts to bend back assuming a thyristor-like behavior. An explanation for this phenomenon is given in this article. Finally, detailed radiation-response curves for the forward bias-operation and annealing studies of the diode's forward voltage are presented for proton, neutron and gamma irradiation.

  3. The Pierce-diode approximation to the single-emitter plasma diode

    International Nuclear Information System (INIS)

    Ender, A. Ya.; Kuhn, S.; Kuznetsov, V. I.

    2006-01-01

    The possibility of modeling fast processes in the collisionless single-emitter plasma diode (Knudsen diode with surface ionization, KDSI) by means of the Pierce-diode is studied. The KDSI is of practical importance in that it is an almost exact model of thermionic energy converters (TICs) in the collisionless regime and can also be used to model low-density Q-machines. At high temperatures, the Knudsen TIC comes close to the efficiency of the Carnot cycle and hence is the most promising converter of thermal to electric energy. TICs can be applied as component parts in high-temperature electronics. It is shown that normalizations must be chosen appropriately in order to compare the plasma characteristics of the two models: the KDSI and the Pierce-diode. A linear eigenmode theory of the KDSI is developed. For both nonlinear time-independent states and linear eigenmodes without electron reflection, excellent agreement is found between the analytical potential distributions for the Pierce-diode and the corresponding numerical ones for the KDSI. For the states with electron reflection, the agreement is satisfactory in a qualitative sense. A full classification of states of both diodes for the regimes with and without electron reflection is presented. The effect of the thermal spread in electron velocities on the potential distributions and the (ε,η) diagrams is analyzed. Generally speaking, the methodology developed is usefully applicable to a variety of systems in which the electrons have beam-like distributions

  4. AlGaN-based laser diodes for the short-wavelength ultraviolet region

    International Nuclear Information System (INIS)

    Yoshida, Harumasa; Kuwabara, Masakazu; Yamashita, Yoji; Takagi, Yasufumi; Uchiyama, Kazuya; Kan, Hirofumi

    2009-01-01

    We have demonstrated the room-temperature operation of GaN/AlGaN and indium-free AlGaN multiple-quantum-well (MQW) laser diodes under the pulsed-current mode. We have successfully grown low-dislocation-density AlGaN films with AlN mole fractions of 20 and 30% on sapphire substrates using the hetero-facet-controlled epitaxial lateral overgrowth (hetero-FACELO) method. GaN/AlGaN and AlGaN MQW laser diodes have been fabricated on the low-dislocation-density Al 0.2 Ga 0.8 N and Al 0.3 Ga 0.7 N films, respectively. The GaN/AlGaN MQW laser diodes lased at a peak wavelength ranging between 359.6 and 354.4 nm. A threshold current density of 8 kA cm -2 , an output power as high as 80 mW and a differential external quantum efficiency (DEQE) of 17.4% have been achieved. The AlGaN MQW laser diodes lased at a peak wavelength down to 336.0 nm far beyond the GaN band gap. For the GaN/AlGaN MQW laser diodes, the modal gain coefficient and the optical internal loss are estimated to be 4.7±0.6 cm kA -1 and 10.6±2.7 cm -1 , respectively. We have observed that the characteristic temperature T 0 ranges from 132 to 89 K and DEQE shows an almost stable tendency with increase of temperature. A temperature coefficient of 0.049 nm K -1 is also found for the GaN/AlGaN MQW laser diode. The results for the AlGaN-based laser diodes grown on high-quality AlGaN films presented here will be essential for the future development of laser diodes emitting much shorter wavelengths.

  5. The Beam Characteristics of High Power Diode Laser Stack

    Science.gov (United States)

    Gu, Yuanyuan; Fu, Yueming; Lu, Hui; Cui, Yan

    2018-03-01

    Direct diode lasers have some of the most attractive features of any laser. They are very efficient, compact, wavelength versatile, low cost, and highly reliable. However, the full utilization of direct diode lasers has yet to be realized. However, the poor quality of diode laser beam itself, directly affect its application ranges, in order to better use of diode laser stack, need a proper correction of optical system, which requires accurate understanding of the diode laser beam characteristics. Diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. Therefore diode laser cladding will open a new field of repairing for the damaged machinery parts which must contribute to recycling of the used machines and saving of cost.

  6. Recent advancements in spectroscopy using tunable diode lasers

    International Nuclear Information System (INIS)

    Nasim, Hira; Jamil, Yasir

    2013-01-01

    Spectroscopy using tunable diode lasers is an area of research that has gone through a dramatic evolution over the last few years, principally because of new exciting approaches in the field of atomic and molecular spectroscopy. This article attempts to review major recent advancements in the field of diode laser based spectroscopy. The discussion covers the developments made so far in the field of diode lasers and illustrates comprehensively the properties of free-running diode lasers. Since the commercially available free-running diode lasers are not suitable for high-precision spectroscopic studies, various techniques developed so far for converting these free-running diode lasers into true narrow linewidth tunable laser sources are discussed comprehensively herein. The potential uses of diode lasers in different spectroscopic fields and their extensive list of applications have also been included, which may be interesting for the novice and the advanced user as well. (topical review)

  7. Photon response of silicon diode neutron detectors

    International Nuclear Information System (INIS)

    McCall, R.C.; Jenkins, T.M.; Oliver, G.D. Jr.

    1976-07-01

    The photon response of silicon diode neutron detectors was studied to solve the problem on detecting neutrons in the presence of high energy photons at accelerator neutron sources. For the experiment Si diodes, Si discs, and moderated activation foil detectors were used. The moderated activation foil detector consisted of a commercial moderator and indium foils 2'' in diameter and approximately 2.7 grams each. The moderator is a cylinder of low-density polyethylene 6 1 / 4 '' in diameter by 6 1 / 16 '' long covered with 0.020'' of cadmium. Neutrons are detected by the reaction 115 In (n,γ) 116 In(T/sub 1 / 2 / = 54 min). Photons cannot be detected directly but photoneutrons produced in the moderator assembly can cause a photon response. The Si discs were thin slices of single-crystal Si about 1.4 mils thick and 1'' in diameter which were used as activation detectors, subsequently being counted on a thin-window pancake G.M. counter. The Si diode fast neutron dosimeter 5422, manufactured by AB Atomenergi in Studsvik, Sweden, consists of a superdoped silicon wafer with a base width of 0.050 inches between two silver contacts coated with 2 mm of epoxy. For this experiment, the technique of measuring the percent change of voltage versus dose was used. Good precision was obtained using both unirradiated and preirradiated diodes. All diodes, calibrated against 252 CF in air,were read out 48 hours after irradiation to account for any room temperature annealing. Results are presented and discussed

  8. 100 years of the physics of diodes

    Science.gov (United States)

    Zhang, Peng; Valfells, Ágúst; Ang, L. K.; Luginsland, J. W.; Lau, Y. Y.

    2017-03-01

    The Child-Langmuir Law (CL), discovered a century ago, gives the maximum current that can be transported across a planar diode in the steady state. As a quintessential example of the impact of space charge shielding near a charged surface, it is central to the studies of high current diodes, such as high power microwave sources, vacuum microelectronics, electron and ion sources, and high current drivers used in high energy density physics experiments. CL remains a touchstone of fundamental sheath physics, including contemporary studies of nanoscale quantum diodes and nano gap based plasmonic devices. Its solid state analog is the Mott-Gurney law, governing the maximum charge injection in solids, such as organic materials and other dielectrics, which is important to energy devices, such as solar cells and light emitting diodes. This paper reviews the important advances in the physics of diodes since the discovery of CL, including virtual cathode formation and extension of CL to multiple dimensions, to the quantum regime, and to ultrafast processes. We review the influence of magnetic fields, multiple species in bipolar flow, electromagnetic and time dependent effects in both short pulse and high frequency THz limits, and single electron regimes. Transitions from various emission mechanisms (thermionic-, field-, and photoemission) to the space charge limited state (CL) will be addressed, especially highlighting the important simulation and experimental developments in selected contemporary areas of study. We stress the fundamental physical links between the physics of beams to limiting currents in other areas, such as low temperature plasmas, laser plasmas, and space propulsion.

  9. Flexible substrate compatible solution processed P-N heterojunction diodes with indium-gallium-zinc oxide and copper oxide

    Energy Technology Data Exchange (ETDEWEB)

    Choudhary, Ishan; Deepak, E-mail: saboo@iitk.ac.in

    2017-04-15

    Highlights: • Both n and p-type semiconductors are solution processed. • Temperature compatibility with flexible substrates such as polyimide. • Compatibility of p-type film (CuO) on n-type film (IZO). • Diode with rectification ratio of 10{sup 4} and operating voltage <1.5 V. • Construction of band alignment using XPS. - Abstract: Printed electronics on flexible substrates requires low temperature and solution processed active inks. With n-type indium-gallium-zinc oxide (IGZO) based electronics maturing for thin film transistor (TFT), we here demonstrate its heterojunction diode with p-copper oxide, prepared by sol-gel method and processed at temperatures compatible with polyimide substrates. The phase obtained for copper oxide is CuO. When coated on n-type oxide, it is prone to develop morphological features, which are minimized by annealing treatment. Diodes of p-CuO films with IGZO are of poor quality due to its high resistivity while, conducting indium-zinc oxide (IZO) films yielded good diode with rectification ratio of 10{sup 4} and operating voltage <1.5 V. A detailed measurement at the interface by X-ray photoelectron spectroscopy and optical absorption ascertained the band alignment to be of staggered type. Consistently, the current in the diode is established to be due to electrons tunnelling from n-IZO to p-CuO.

  10. Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

    KAUST Repository

    Sun, Liangfeng; Choi, Joshua J.; Stachnik, David; Bartnik, Adam C.; Hyun, Byung-Ryool; Malliaras, George G.; Hanrath, Tobias; Wise, Frank W.

    2012-01-01

    Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr '1 m '2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

  11. Status and plans for the next generation magnetically immersed diodes on RITS

    International Nuclear Information System (INIS)

    Rovang, Dean; Kincy, Mark; Maenchen, John; Menge, Peter; Molina, Isidro; Olson, Craig; Welch, Dale; Oliver, Bryan; Ives, Harry; VanDeValde, David; Johnson, David L.; Lesch, Benny; Swenson, Chuck

    2002-01-01

    Sandia National Laboratories is investigating and developing high-dose, high-brightness flash radiographic sources. We are in the process of designing; fabricating and conducting engineering tests on the next-generation magnetically immersed electron diodes. These diodes employ unique, large-bore (80-110 mm), high-field (28-45 T), cryogenically-cooled solenoid magnets to help produce an intense electron beam from a needle-like cathode 'immersed' in the strong Bz field of the magnet. The diode designs and status of the engineering development are described. Later this year we plan to conduct experiments with these sources on the new Radiographic Integrated Test Stand (RITS), now in operation at Sandia. In its present three-stage configuration, RITS provides a 4-MV, 150-kA, 70-ns pulse to the diode. Fully three-dimensional particle in cell LSP code simulations are used to investigate relevant physics issues and the expected radiographic performance (spot size and dose) of this system. Preliminary results from these simulations are described

  12. Comparing the 810nm diode laser with conventional surgery in orthodontic soft tissue procedures.

    Science.gov (United States)

    Ize-Iyamu, I N; Saheeb, B D; Edetanlen, B E

    2013-09-01

    To compare the use of the 810nm diode laser with conventional surgery in the management of soft tissue mucogingival problems associated with orthodontic treatment. Orthodontic patients requiring different soft tissue surgical procedures were randomly assigned to receive conventional surgery or soft tissue diode laser, (wavelength 810 nm). Parameters documented include the type of anaesthesia used, intra and post operative pain, bleeding, the use of scalpel and sutures. The chi-squared test was used to test for significance at 95% confidence level. Probability values (p-values) less than 0.05 were regarded as significant. Only 2(16.7%) of the procedures carried out with the soft tissue laser required infiltration anaesthesia compared to 10 (90.9%) with conventional surgery and this was significant (Pdiode laser (Pdiode laser. No sutures were used in all soft tissue cases managed with the diode laser and this was significant (Plaser compared with conventional surgery. Orthodontic patients treated with the diode laser required less infiltration anaesthesia, had reduced bleeding during and after surgery, rapid postoperative haemostasis, elimination of the need for sutures and an improved postoperative comfort and healing.

  13. Narrow linewidth diode laser modules for quantum optical sensor applications in the field and in space

    Science.gov (United States)

    Wicht, A.; Bawamia, A.; Krüger, M.; Kürbis, Ch.; Schiemangk, M.; Smol, R.; Peters, A.; Tränkle, G.

    2017-02-01

    We present the status of our efforts to develop very compact and robust diode laser modules specifically suited for quantum optics experiments in the field and in space. The paper describes why hybrid micro-integration and GaAs-diode laser technology is best suited to meet the needs of such applications. The electro-optical performance achieved with hybrid micro-integrated, medium linewidth, high power distributed-feedback master-oscillator-power-amplifier modules and with medium power, narrow linewidth extended cavity diode lasers emitting at 767 nm and 780 nm are briefly described and the status of space relevant stress tests and space heritage is summarized. We also describe the performance of an ECDL operating at 1070 nm. Further, a novel and versatile technology platform is introduced that allows for integration of any type of laser system or electro-optical module that can be constructed from two GaAs chips. This facilitates, for the first time, hybrid micro-integration, e.g. of extended cavity diode laser master-oscillator-poweramplifier modules, of dual-stage optical amplifiers, or of lasers with integrated, chip-based phase modulator. As an example we describe the implementation of an ECDL-MOPA designed for experiments on ultra-cold rubidium and potassium atoms on board a sounding rocket and give basic performance parameters.

  14. Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

    Science.gov (United States)

    Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

    2012-05-06

    Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

  15. Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents.

    Science.gov (United States)

    Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

    2017-04-19

    Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power P OUT of 564 μW and a rectifier output voltage V RECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a P OUT of 288 μW and a V RECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier.

  16. Pseudo-diode based on protonic/electronic hybrid oxide transistor

    Science.gov (United States)

    Fu, Yang Ming; Liu, Yang Hui; Zhu, Li Qiang; Xiao, Hui; Song, An Ran

    2018-01-01

    Current rectification behavior has been proved to be essential in modern electronics. Here, a pseudo-diode is proposed based on protonic/electronic hybrid indium-gallium-zinc oxide electric-double-layer (EDL) transistor. The oxide EDL transistors are fabricated by using phosphorous silicate glass (PSG) based proton conducting electrolyte as gate dielectric. A diode operation mode is established on the transistor, originating from field configurable proton fluxes within the PSG electrolyte. Current rectification ratios have been modulated to values ranged between ˜4 and ˜50 000 with gate electrode biased at voltages ranged between -0.7 V and 0.1 V. Interestingly, the proposed pseudo-diode also exhibits field reconfigurable threshold voltages. When the gate is biased at -0.5 V and 0.3 V, threshold voltages are set to ˜-1.3 V and -0.55 V, respectively. The proposed pseudo-diode may find potential applications in brain-inspired platforms and low-power portable systems.

  17. Improving the reverse recovery of power MOSFET integral diodes by electron irradiation

    International Nuclear Information System (INIS)

    Baliga, B.J.; Walden, J.P.

    1983-01-01

    Using 3 MeV electron irradiation at room temperature it was found that the reverse recovery charge in the integral diode could be continuously reduced in a well controlled manner from over 500nC to less than 100nC without any significant increase in the forward voltage drop of the integral diode under typical operating peak currents. The reverse recovery time was also observed to decrease from 3 microseconds to less than 200 nsec when the radiation dose was increased from 0 to 16 Megarads. The damage produced in gate oxide of the MOSFET due to the electron radiation damage was found to cause an undesirable decrease in the gate threshold voltage. This resulted in excessive channel leakage current flow in the MOSFET at zero gate bias. It was found that this channel leakage current was substantially reduced by annealing the devices at 140 0 C without influencing the integral diode reverse recovery speed. Thus, the electron irradiation technique was found to be effective in controlling the integral diode reverse recovery characteristics without any degradation of the power MOSFET characteristics. (author)

  18. Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control

    KAUST Repository

    Sun, Liangfeng

    2012-05-06

    Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr \\'1 m \\'2) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH 2 groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.© 2012 Macmillan Publishers Limited.

  19. Resonant Rectifier ICs for Piezoelectric Energy Harvesting Using Low-Voltage Drop Diode Equivalents

    Science.gov (United States)

    Din, Amad Ud; Chandrathna, Seneke Chamith; Lee, Jong-Wook

    2017-01-01

    Herein, we present the design technique of a resonant rectifier for piezoelectric (PE) energy harvesting. We propose two diode equivalents to reduce the voltage drop in the rectifier operation, a minuscule-drop-diode equivalent (MDDE) and a low-drop-diode equivalent (LDDE). The diode equivalents are embedded in resonant rectifier integrated circuits (ICs), which use symmetric bias-flip to reduce the power used for charging and discharging the internal capacitance of a PE transducer. The self-startup function is supported by synchronously generating control pulses for the bias-flip from the PE transducer. Two resonant rectifier ICs, using both MDDE and LDDE, are fabricated in a 0.18 μm CMOS process and their performances are characterized under external and self-power conditions. Under the external-power condition, the rectifier using LDDE delivers an output power POUT of 564 μW and a rectifier output voltage VRECT of 3.36 V with a power transfer efficiency of 68.1%. Under self-power conditions, the rectifier using MDDE delivers a POUT of 288 μW and a VRECT of 2.4 V with a corresponding efficiency of 78.4%. Using the proposed bias-flip technique, the power extraction capability of the proposed rectifier is 5.9 and 3.0 times higher than that of a conventional full-bridge rectifier. PMID:28422085

  20. Luminescence and squeezing of a superconducting light-emitting diode

    Science.gov (United States)

    Hlobil, Patrik; Orth, Peter P.

    2015-05-01

    We investigate a semiconductor p -n junction in contact with superconducting leads that is operated under forward bias as a light-emitting diode. The presence of superconductivity results in a significant increase of the electroluminescence in a sharp frequency window. We demonstrate that the tunneling of Cooper pairs induces an additional luminescence peak on resonance. There is a transfer of superconducting to photonic coherence that results in the emission of entangled photon pairs and squeezing of the fluctuations in the quadrature amplitudes of the emitted light. We show that the squeezing angle can be electrically manipulated by changing the relative phase of the order parameters in the superconductors. We finally derive the conditions for lasing in the system and show that the laser threshold is reduced due to superconductivity. This reveals how the macroscopic coherence of a superconductor can be used to control the properties of light.

  1. Current path in light emitting diodes based on nanowire ensembles

    International Nuclear Information System (INIS)

    Limbach, F; Hauswald, C; Lähnemann, J; Wölz, M; Brandt, O; Trampert, A; Hanke, M; Jahn, U; Calarco, R; Geelhaar, L; Riechert, H

    2012-01-01

    Light emitting diodes (LEDs) have been fabricated using ensembles of free-standing (In, Ga)N/GaN nanowires (NWs) grown on Si substrates in the self-induced growth mode by molecular beam epitaxy. Electron-beam-induced current analysis, cathodoluminescence as well as biased μ-photoluminescence spectroscopy, transmission electron microscopy, and electrical measurements indicate that the electroluminescence of such LEDs is governed by the differences in the individual current densities of the single-NW LEDs operated in parallel, i.e. by the inhomogeneity of the current path in the ensemble LED. In addition, the optoelectronic characterization leads to the conclusion that these NWs exhibit N-polarity and that the (In, Ga)N quantum well states in the NWs are subject to a non-vanishing quantum confined Stark effect. (paper)

  2. Defects in degraded GaN-based laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Tomiya, Shigetaka [Materials Analysis Center, GPS, Sony Corporation, 2-1-1 Shin-sakuragaoka, Hodogaya, Yokohama, Kanagawa, 240-0036 (Japan); Goto, Shu; Takeya, Motonobu; Ikeda, Masao [Development Center, Sony Shiroishi Semiconductor, Inc., 3-53-2 Shiratori, Shiroishi, Miyagi, 989-0734 (Japan)

    2003-11-01

    We investigate degraded GaN-based laser diodes (LDs) fabricated on epitaxial lateral overgrown (ELO) GaN layers using transmission electron microscopy. The dislocation density in the wing region of the ELO is of the order of 10{sup 6}/cm{sup 2} and there are approximately ten threading dislocations in the laser stripe. Neither dislocation multiplication from the threading dislocations nor any structural changes of the threading dislocations were observed in the devices, which were degraded within approximately one hundred hours under 30 mW continuous operation at 25 C. We can, therefore, conclude that degradation in GaN-based LDs is not responsible for the recombination enhanced dislocation motion that is usually observed in zincblende structure-based LDs. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Single Photon Avalanche Diodes: Towards the Large Bidimensional Arrays

    Directory of Open Access Journals (Sweden)

    Emilio Sciacca

    2008-08-01

    Full Text Available Single photon detection is one of the most challenging goals of photonics. In recent years, the study of ultra-fast and/or low-intensity phenomena has received renewed attention from the academic and industrial communities. Intense research activity has been focused on bio-imaging applications, bio-luminescence, bio-scattering methods, and, more in general, on several applications requiring high speed operation and high timing resolution. In this paper we present design and characterization of bi-dimensional arrays of a next generation of single photon avalanche diodes (SPADs. Single photon sensitivity, dark noise, afterpulsing and timing resolution of the single SPAD have been examined in several experimental conditions. Moreover, the effects arising from their integration and the readout mode have also been deeply investigated.

  4. Diode-pumped Kerr-lens mode-locked femtosecond Yb:YAG ceramic laser

    Science.gov (United States)

    Zi-Ye, Gao; Jiang-Feng, Zhu; Ke, Wang; Jun-Li, Wang; Zhao-Hua, Wang; Zhi-Yi, Wei

    2016-02-01

    We experimentally demonstrated a diode-pumped Kerr-lens mode-locked femtosecond laser based on an Yb:YAG ceramic. Stable laser pulses with 97-fs duration, 2.8-nJ pulse energy, and 320-mW average power were obtained. The femtosecond oscillator operated at a central wavelength of 1049 nm and a repetition rate of 115 MHz. To the best of our knowledge, this is the first demonstration of a Kerr-lens mode-locked operation in a diode-pumped Yb:YAG ceramic laser with sub-100 fs pulse duration. Project supported by the National Major Scientific Instrument Development Project of China (Grant No. 2012YQ120047), the National Natural Science Foundation of China (Grant No. 61205130), and the Fundamental Research Funds for the Central Universities, China (Grant No. JB140502).

  5. Assessment of Hematological and Immunological Changes Associated With Diode Laser Turbinoplasty

    International Nuclear Information System (INIS)

    Ibrahim, D.R.

    2013-01-01

    20 patients undergoing laser surgery of the inferior turbinate participated in the present study to compare the pre and post-operative changes of the symptoms and signs of allergic rhinitis, blood picture, IgE, interleukin-4, interleukin-5 and interferon-gamma. After one month of diode laser turbinoplasty, there was improvement in clinical symptoms like nasal obstruction, sneezing and rhinorrhoea. Regarding the blood picture, there was marked relative eosinopenia while the total leucocytic count showed a significant increase. The erythroid series showed almost no changes. The operation was accompanied also with a significant decrease in IgE and interleukin-5, at the same time interleukin-4 and interferon-gamma showed insignificant decrease and increase respectively. These results denoted that diode laser inferior turbinoplasty improves not only the clinical manifestations of allergic rhinitis but it has also an immune effect by modulating T-cell function and tilting the Th 1/Th 2 balance towards Th 1 dominant state.

  6. Fast all-optical flip-flop based on a single distributed feedback laser diode.

    Science.gov (United States)

    Huybrechts, Koen; Morthier, Geert; Baets, Roel

    2008-07-21

    Since there is an increasing demand for fast networks and switches, the electronic data processing imposes a severe bottleneck and all-optical processing techniques will be required in the future. All-optical flip-flops are one of the key components because they can act as temporary memory elements. Several designs have already been demonstrated but they are often relatively slow or complex to fabricate. We demonstrate experimentally fast flip-flop operation in a single DFB laser diode which is one of the standard elements in today's telecommunication industry. Injecting continuous wave light in the laser diode, a bistability is obtained due to the spatial hole burning effect. We can switch between the two states by using pulses with energies below 200 fJ resulting in flip-flop operation with switching times below 75 ps and repetition rates of up to 2 GHz.

  7. Pediatric endocanalicular diode laser dacryocystorhinostomy: results of a minimally invasive surgical technique.

    Science.gov (United States)

    Uysal, Ismail Onder; Ozçimen, Muammer; Yener, Halil Ibrahim; Kal, Ali

    2011-09-01

    The purpose of this study was to evaluate the effectiveness of endocanalicular diode laser dacryocystorhinostomy (DCR), which is a minimally invasive surgical technique, in pediatric patients with congenital nasolacrimal duct obstruction (NLDO). A retrospective study was carried out on patients treated between October 2008 and August 2009 for nasolacrimal duct obstruction with an endocanalicular diode laser procedure. Patients diagnosed as having nasolacrimal duct obstruction were included in this study and an endocanalicular diode laser procedure was performed. The main outcome measures were patients' previous treatments, clinical presentation, operative and postoperative complications, postoperative follow-up and resolution of epiphora. Eighteen children (10 girls, 8 boys) with a mean age of 6.11 ± 2.08 years (range, 4-10) underwent 20 endocanalicular laser DCR operations for congenital NLDO. In all eyes (100%), there was a history of epiphora and chronic dacryocystitis; two (10%) presented with acute dacryocystitis. Previous procedures included probing and irrigation of all eyes (100%) and silicone tube intubation in nine eyes (45%). None of the patients underwent any previous DCR operations. During a mean postoperative follow-up period of 20.50 ± 3.24 months (range, 14-24 months), the anatomical success rate (patency of ostium on nasal endoscopy) was 100%, and the clinical success rate (resolution of epiphora) was 85%. Endocanalicular diode laser DCR is an effective treatment modality for pediatric patients with congenital NLDO that compares favorably with the reported success rates of external and endoscopic endonasal DCR. Moreover, it has an added advantage of shorter operative time, less morbidity and avoidance of overnight admission.

  8. The use of silicon devices (diodes, RAMs, etc.) for alpha particle detection

    International Nuclear Information System (INIS)

    Agosteo, S.; Foglio Para, A.

    1993-01-01

    Silicon electronic devices (diodes, random access memories (RAMs), etc.) can be employed in alpha particle detection and spectroscopy with a good energy resolution. The detection mechanisms are first discussed; the performances of these devices operating in the pulse and in the current mode are then described starting from the pioneering works of the last decade. Some peculiar applications of RAMs are finally reported. (author). 7 refs, 5 figs, 1 tab

  9. Investigation of Self-injection Locked Visible Laser Diodes for High Bit-rate Visible Light Communication

    KAUST Repository

    Shamim, Md. Hosne Mobarok; Shemis, Mohamed; Shen, Chao; Oubei, Hassan M.; Ng, Tien Khee; Ooi, Boon S.; Khan, Mohammed Zahed Mustafa

    2018-01-01

    -mode-suppression-ratio was considerably increased in all the cases, reaching as high as ~20 dB in self-injection locked blue laser diode, thus enabling a close to single mode operation. This work paves the way for attaining high speed optical wireless communications by overcoming

  10. A High Frequency (HF) Inductive Power Transfer Circuit for High Temperature Applications Using SiC Schottky Diodes

    Science.gov (United States)

    Jordan, Jennifer L.; Ponchak, George E.; Spry, David J.; Neudeck, Philip G.

    2018-01-01

    Wireless sensors placed in high temperature environments, such as aircraft engines, are desirable to reduce the mass and complexity of routing wires. While communication with the sensors is straight forward, providing power wirelessly is still a challenge. This paper introduces an inductive wireless power transfer circuit incorporating SiC Schottky diodes and its operation from room temperature (25 C) to 500 C.

  11. Effect of arylamine hole-transport units on the performance of blue polyspirobifulorene light-emitting diodes

    NARCIS (Netherlands)

    Abbaszadeh, D.; Nicolai, H.T.; Crəciun, N.I.; Blom, P.W.M.

    2014-01-01

    The operation of blue light-emitting diodes based on polyspirobifluorene with a varying number of N,N,N′,N′ tetraaryldiamino biphenyl (TAD) hole-transport units (HTUs) is investigated. Assuming that the electron transport is not affected by the incorporation of TAD units, model calculations predict

  12. Studies of diode-pumped solid-state lasers based on Nd:KGW and Nd:YAG

    International Nuclear Information System (INIS)

    Ibrahim, Akram Yousif

    1996-01-01

    The experimental part of the thesis was dedicated to the studies of diode-pumped solid- state lasers. it includes experiments with end-pumped continuous wave (CW) Nd-doped crystals. In particular, we have concentrated to Nd:KGW, a relatively new and not studied in the literature about the laser materials. We have performed some basics measurements of this material. A fibre bundle coupled laser diode array was used as a pump source. We have investigated two main optical arrangements for the pump, allowing operation in two regimes: 1- Low pump power operation using selected output power from a single of the fibre bundle. 2- high pump power operation using the total output power from the bundle. The main parameters of the cavities we use (e.g. the cavity mode and the pumping spot size), were determined using the matrix approach and the equations for the propagation of the Gaussian beams. The highest output power obtained in this work for Nd:KGW with a transverse electromagnetic (TEM 0 0) single-mode, continuous (CW) operation, was 400 mW for 1700 mW pumping power from the diode laser. We present also data about the performance of a diode pumped Nd:YAG crystal. Our experiment shows that Nd:KGW is a promising material of low and medium pumping power levels. (Author)

  13. Large area electron beam diode development

    International Nuclear Information System (INIS)

    Helava, H.; Gilman, C.M.; Stringfield, R.M.; Young, T.

    1983-01-01

    A large area annular electron beam diode has been tested at Physics International Co. on the multi-terawatt PITHON generator. A twelve element post hole convolute converted the coaxial MITL into a triaxial arrangement of anode current return structures both inside and outside the cathode structure. The presence of both inner and outer current return paths provide magnetic pressure balance for the beam, as determined by diode current measurements. X-ray pinhole photographs indicated uniform emission with intensity maxima between the post positions. Current losses in the post hole region were negligible, as evidenced by the absence of damage to the aluminum hardware. Radial electron flow near the cathode ring however did damage the inner anode cylinder between the post positions. Cutting away these regions prevented further damage of the transmission lines

  14. Efficient thermal diode with ballistic spacer

    Science.gov (United States)

    Chen, Shunda; Donadio, Davide; Benenti, Giuliano; Casati, Giulio

    2018-03-01

    Thermal rectification is of importance not only for fundamental physics, but also for potential applications in thermal manipulations and thermal management. However, thermal rectification effect usually decays rapidly with system size. Here, we show that a mass-graded system, with two diffusive leads separated by a ballistic spacer, can exhibit large thermal rectification effect, with the rectification factor independent of system size. The underlying mechanism is explained in terms of the effective size-independent thermal gradient and the match or mismatch of the phonon bands. We also show the robustness of the thermal diode upon variation of the model's parameters. Our finding suggests a promising way for designing realistic efficient thermal diodes.

  15. Pulsed diode source of polarized ions

    International Nuclear Information System (INIS)

    Katzenstein, J.; Rostoker, N.

    1983-01-01

    The advantages of polarized nuclei for fusion reactors have recently been described. We propose a pulsed source of polarized nuclei that consists of an ion diode with a polarized anode. With magnetic resonance techniques the nuclear spins of the protons of solid NH 3 can be made about 90 to 95% polarized. This material would be used for the anode. The diode would be pulsed with a voltage of 1-200K-volts for 1-2 μ sec. Flashover of the anode produces a surface plasma from which the polarized protons would be extracted to form a beam. Depolarization could be detected by comparing reaction cross sections and/or distribution of reaction products with similar results for unpolarized beams

  16. Diode line scanner for beam diagnostics

    International Nuclear Information System (INIS)

    Gustov, S.A.

    1987-01-01

    The device-scanning diode line is described. It is applied for beam profile measuring with space precision better than ± 0.5 mm and with discreteness of 3 mm along Y-axis and 0.25 mm along X-axis. The device is easy in construction, reliable and has a small time of information acquisition (2-5 min). The working range is from 100 to 10 6 rad/min (10 6 -10 10 part/mm 2 /s for 660 MeV protons). Radioresistance is 10 7 rad. The device can be applied for precise beam line element tuning at beam transporting and emittance measuring. The fixed diode line (a simplified device version) has smaller dimensions and smaller time of data acquisition (2-5 s). It is applied for quick preliminary beamline tuning. The flowsheet and different variants of data representation on beam profile are given

  17. Proposed Use of Zero Bias Diode Arrays as Thermal Electric Noise Rectifiers and Non-Thermal Energy Harvesters

    Science.gov (United States)

    Valone, Thomas F.

    2009-03-01

    The well known built-in voltage potential for some select semiconductor p-n junctions and various rectifying devices is proposed to be favorable for generating DC electricity at "zero bias" (with no DC bias voltage applied) in the presence of Johnson noise or 1/f noise which originates from the quantum vacuum (Koch et al., 1982). The 1982 Koch discovery that certain solid state devices exhibit measurable quantum noise has also recently been labeled a finding of dark energy in the lab (Beck and Mackey, 2004). Tunnel diodes are a class of rectifiers that are qualified and some have been credited with conducting only because of quantum fluctuations. Microwave diodes are also good choices since many are designed for zero bias operation. A completely passive, unamplified zero bias diode converter/detector for millimeter (GHz) waves was developed by HRL Labs in 2006 under a DARPA contract, utilizing a Sb-based "backward tunnel diode" (BTD). It is reported to be a "true zero-bias diode." It was developed for a "field radiometer" to "collect thermally radiated power" (in other words, 'night vision'). The diode array mounting allows a feed from horn antenna, which functions as a passive concentrating amplifier. An important clue is the "noise equivalent power" of 1.1 pW per root hertz and the "noise equivalent temperature difference" of 10° K, which indicate sensitivity to Johnson noise (Lynch, et al., 2006). There also have been other inventions such as "single electron transistors" that also have "the highest signal to noise ratio" near zero bias. Furthermore, "ultrasensitive" devices that convert radio frequencies have been invented that operate at outer space temperatures (3 degrees above zero point: 3° K). These devices are tiny nanotech devices which are suitable for assembly in parallel circuits (such as a 2-D array) to possibly produce zero point energy direct current electricity with significant power density (Brenning et al., 2006). Photovoltaic p-n junction

  18. Experimental diode laser-assisted microvascular anastomosis.

    Science.gov (United States)

    Reali, U M; Gelli, R; Giannotti, V; Gori, F; Pratesi, R; Pini, R

    1993-05-01

    An experimental study to evaluate a diode-laser approach to microvascular end-to-end anastomoses is reported. Studies were carried out on the femoral arteries and veins of Wistar rats, and effective welding of vessel tissue was obtained at low laser power, by enhancing laser absorption with indocyanine green (Cardio-green) solution. The histologic and surgical effects of this laser technique were examined and compared with those of conventional microvascular sutured anastomoses.

  19. Safety of light emitting diodes in toys.

    Science.gov (United States)

    Higlett, M P; O'Hagan, J B; Khazova, M

    2012-03-01

    Light emitting diodes (LEDs) are increasingly being used in toys. An assessment methodology is described for determining the accessible emission limits for the optical radiation from the toys, which takes account of expected use and reasonably foreseeable misuse of toys. Where data are available, it may be possible to assess the toy from the data sheet alone. If this information is not available, a simple measurement protocol is proposed.

  20. Safety of light emitting diodes in toys

    International Nuclear Information System (INIS)

    Higlett, M P; O'Hagan, J B; Khazova, M

    2012-01-01

    Light emitting diodes (LEDs) are increasingly being used in toys. An assessment methodology is described for determining the accessible emission limits for the optical radiation from the toys, which takes account of expected use and reasonably foreseeable misuse of toys. Where data are available, it may be possible to assess the toy from the data sheet alone. If this information is not available, a simple measurement protocol is proposed.

  1. An All-Silicon Passive Optical Diode

    OpenAIRE

    Fan, Li; Wang, Jian; Varghese, Leo T.; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M.; Qi, Minghao

    2011-01-01

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input pow...

  2. Diode having trenches in a semiconductor region

    Energy Technology Data Exchange (ETDEWEB)

    Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth

    2016-03-22

    An electrode structure is described in which conductive regions are recessed into a semiconductor region. Trenches may be formed in a semiconductor region, such that conductive regions can be formed in the trenches. The electrode structure may be used in semiconductor devices such as field effect transistors or diodes. Nitride-based power semiconductor devices are described including such an electrode structure, which can reduce leakage current and otherwise improve performance.

  3. Bicritical behaviors observed in coupled diode resonators

    International Nuclear Information System (INIS)

    Kim, Youngtae

    2004-01-01

    We have investigated bicritical behaviors of unidirectionally coupled diode resonators having a period doubling route to chaos. Depending on the dynamical states of the drive subsystem, the response subsystem showed a dynamical behavior other than that of the uncoupled system. The experimental results agreed well with the results obtained from the simulation of unidirectionally coupled logistic maps and oscillators. A new type of scaling behavior and a power spectrum of the hyperchaotic attractor appearing near a bicritical point were also observed.

  4. Calculation of the intrinsic spectral density of current fluctuations in nanometric Schottky-barrier diodes at terahertz frequencies

    Energy Technology Data Exchange (ETDEWEB)

    Mahi, F.Z. [Science and Technology Institute, University of Bechar, 08000 Bechar (Algeria)], E-mail: fati_zo_mahi2002@yahoo.fr; Helmaoui, A. [Science and Technology Institute, University of Bechar, 08000 Bechar (Algeria); Varani, L. [Institut d' Electronique du Sud (CNRS UMR 5214), Universite Montpellier II, 34095 Montpellier (France); Shiktorov, P.; Starikov, E.; Gruzhinskis, V. [Semiconductor Physics Institute, 01108 Vilnius (Lithuania)

    2008-10-01

    An analytical model for the noise spectrum of nanometric Schottky-barrier diodes (SBD) is developed. The calculated frequency dependence of the spectral density of current fluctuations exhibits resonances in the terahertz domain which are discussed and analyzed as functions of the length of the diode, free carrier concentration, length of the depletion region and applied voltage. A good agreement obtained with direct Monte Carlo simulations of GaAs SBDs operating from barrier-limited to flat-band conditions fully validates the proposed approach.

  5. Resonantly diode-pumped continuous-wave and Q-switched Er:YAG laser at 1645 nm.

    Science.gov (United States)

    Chang, N W H; Simakov, N; Hosken, D J; Munch, J; Ottaway, D J; Veitch, P J

    2010-06-21

    We describe an efficient Er:YAG laser that is resonantly pumped using continuous-wave (CW) laser diodes at 1470 nm. For CW lasing, it emits 6.1 W at 1645 nm with a slope efficiency of 36%, the highest efficiency reported for an Er:YAG laser that is pumped in this manner. In Q-switched operation, the laser produces diffraction-limited pulses with an average power of 2.5 W at 2 kHz PRF. To our knowledge this is the first Q-switched Er:YAG laser resonantly pumped by CW laser diodes.

  6. In-pile and out-of-pile testing of a molybdenum-uranium dioxide cermet fueled themionic diode

    Science.gov (United States)

    Diianni, D. C.

    1972-01-01

    The behavior of Mo-UO2 cermet fuel in a diode for thermionic reactor application was studied. The diode had a Mo-0.5 Ti emitter and niobium collector. Output power ranged from 1.4 to 2.8 W/cm squared at emitter and collector temperatures of 1500 deg and 540 C. Thermionic performance was stable within the limits of the instrumentation sensitivity. Through 1000 hours of in-pile operation the emitter was dimensionally stable. However, some fission gases (15 percent) leaked through an inner clad imperfection that occurred during fuel fabrication.

  7. Integrated one diode-one resistor architecture in nanopillar SiOx resistive switching memory by nanosphere lithography.

    Science.gov (United States)

    Ji, Li; Chang, Yao-Feng; Fowler, Burt; Chen, Ying-Chen; Tsai, Tsung-Ming; Chang, Kuan-Chang; Chen, Min-Chen; Chang, Ting-Chang; Sze, Simon M; Yu, Edward T; Lee, Jack C

    2014-02-12

    We report on a highly compact, one diode-one resistor (1D-1R) nanopillar device architecture for SiOx-based ReRAM fabricated using nanosphere lithography (NSL). The intrinsic SiOx-based resistive switching element and Si diode are self-aligned on an epitaxial silicon wafer using NSL and a deep-Si-etch process without conventional photolithography. AC-pulse response in 50 ns regime, multibit operation, and good reliability are demonstrated. The NSL process provides a fast and economical approach to large-scale patterning of high-density 1D-1R ReRAM with good potential for use in future applications.

  8. Diode-laser-illuminated automotive lamp systems

    Science.gov (United States)

    Marinelli, Michael A.; Remillard, Jeffrey T.

    1998-05-01

    We have utilized the high brightness of state-of-the-art diode laser sources, and a variety of emerging optical technologies to develop a new class of thin, uniquely styled automotive brake and signal lamps. Using optics based on thin (5 mm) plastic sheets, these lamps provide appearance and functional advantages not attainable with traditional automotive lighting systems. The light is coupled into the sheets using a 1 mm diameter glass fiber, and manipulated using refraction and reflection from edges, surfaces, and shaped cut-outs. Light can be extracted with an efficiency of approximately 50% and formed into a luminance distribution that meets the Society of Automotive Engineers (SAE) photometric requirements. Prototype lamps using these optics have been constructed and are less than one inch in thickness. Thin lamps reduce sheet metal costs, complexity, material usage, weight, and allow for increased trunk volume. In addition, these optics enhance lamp design flexibility. When the lamps are not energized, they can appear body colored, and when lighted, the brightness distribution across the lamp can be uniform or structured. A diode laser based brake lamp consumes seven times less electrical power than one using an incandescent source and has instant on capability. Also, diode lasers have the potential to be 10-year/150,000 mile light sources.

  9. Diode Laser Excision of Oral Benign Lesions.

    Science.gov (United States)

    Mathur, Ena; Sareen, Mohit; Dhaka, Payal; Baghla, Pallavi

    2015-01-01

    Lasers have made tremendous progress in the field of dentistry and have turned out to be crucial in oral surgery as collateral approach for soft tissue surgery. This rapid progress can be attributed to the fact that lasers allow efficient execution of soft tissue procedures with excellent hemostasis and field visibility. When matched to scalpel, electrocautery or high frequency devices, lasers offer maximum postoperative patient comfort. Four patients agreed to undergo surgical removal of benign lesions of the oral cavity. 810 nm diode lasers were used in continuous wave mode for excisional biopsy. The specimens were sent for histopathological examination and patients were assessed on intraoperative and postoperative complications. Diode laser surgery was rapid, bloodless and well accepted by patients and led to complete resolution of the lesions. The excised specimen proved adequate for histopathological examination. Hemostasis was achieved immediately after the procedure with minimal postoperative problems, discomfort and scarring. We conclude that diode lasers are rapidly becoming the standard of care in contemporary dental practice and can be employed in procedures requiring excisional biopsy of oral soft tissue lesions with minimal problems in histopathological diagnosis.

  10. Performance measurements of hybrid PIN diode arrays

    International Nuclear Information System (INIS)

    Jernigan, J.G.; Arens, J.F.; Collins, T.; Herring, J.; Shapiro, S.L.; Wilburn, C.D.

    1990-05-01

    We report on the successful effort to develop hybrid PIN diode arrays and to demonstrate their potential as components of vertex detectors. Hybrid pixel arrays have been fabricated by the Hughes Aircraft Co. by bump bonding readout chips developed by Hughes to an array of PIN diodes manufactured by Micron Semiconductor Inc. These hybrid pixel arrays were constructed in two configurations. One array format having 10 x 64 pixels, each 120 μm square, and the other format having 256 x 256 pixels, each 30 μm square. In both cases, the thickness of the PIN diode layer is 300 μm. Measurements of detector performance show that excellent position resolution can be achieved by interpolation. By determining the centroid of the charge cloud which spreads charge into a number of neighboring pixels, a spatial resolution of a few microns has been attained. The noise has been measured to be about 300 electrons (rms) at room temperature, as expected from KTC and dark current considerations, yielding a signal-to-noise ratio of about 100 for minimum ionizing particles. 4 refs., 13 figs

  11. Fine tuning power diodes with irradiation

    International Nuclear Information System (INIS)

    Tarneja, K.S.; Bartko, J.; Johnson, J.E.

    1976-01-01

    Diodes of a particular type are fine tuned with irradiation to optimize the reverse recovery time while minimizing forward voltage drop and providing more uniform electrical characcteristics. The initial and desired minority carrier lifetimes in the anode region of the type are determined as a function of forward voltage drop and reverse recovery time, and the minority carrier radiation damage factor is determined for a desired type of diode and radiation source. The radiation dosage to achieve the desired carrier lifetime with the radiation source is thereafter determined from the function 1/tau = 1/tau 0 + K phi, where tau is the desired minority carrier lifetime, tau 0 is the initial minority carrier lifetime, K is the determined minority carrier radiation damage factor and phi is the radiation dosage. A major surface and preferably the major surface adjoining the anode region of the diodes is then irradiated with the radiation source to the determined radiation dosage. Preferably, the radiation dosage is between about 1 X 10 12 and 5 X 10 13 e/cm 2 , with electron radiation of intensity between 1 and 3 MeV

  12. Femtosecond Cr:LiSAF and Cr:LiCAF lasers pumped by tapered diode lasers.

    Science.gov (United States)

    Demirbas, Umit; Schmalz, Michael; Sumpf, Bernd; Erbert, Götz; Petrich, Gale S; Kolodziejski, Leslie A; Fujimoto, James G; Kärtner, Franz X; Leitenstorfer, Alfred

    2011-10-10

    We report compact, low-cost and efficient Cr:Colquiriite lasers that are pumped by high brightness tapered laser diodes. The tapered laser diodes provided 1 to 1.2 W of output power around 675 nm, at an electrical-to-optical conversion efficiency of about 30%. Using a single tapered diode laser as the pump source, we have demonstrated output powers of 500 mW and 410 mW together with slope efficiencies of 47% and 41% from continuous wave (cw) Cr:LiSAF and Cr:LiCAF lasers, respectively. In cw mode-locked operation, sub-100-fs pulse trains with average power between 200 mW and 250 mW were obtained at repetition rates around 100 MHz. Upon pumping the Cr:Colquiriite lasers with two tapered laser diodes (one from each side of the crystal), we have observed scaling of cw powers to 850 mW in Cr:LiSAF and to 650 mW in Cr:LiCAF. From the double side pumped Cr:LiCAF laser, we have also obtained ~220 fs long pulses with 5.4 nJ of pulse energy at 77 MHz repetition rate. These are the highest energy levels reported from Cr:Colquiriite so far at these repetition rates. Our findings indicate that tapered diodes in the red spectral region are likely to become the standard pump source for Cr:Colquiriite lasers in the near future. Moreover, the simplified pumping scheme might facilitate efficient commercialization of Cr:Colquiriite systems, bearing the potential to significantly boost applications of cw and femtosecond lasers in this spectral region (750-1000 nm).

  13. Prostate volume did not affect voiding function improvements in diode laser enucleation of the prostate.

    Science.gov (United States)

    Yang, Stephen Shei-Dei; Hsieh, Cheng-Hsing; Chiang, I-Ni; Lin, Chia-Da; Chang, Shang-Jen

    2013-03-01

    We compared safety and surgical outcomes in patients with different prostate sizes treated with diode laser enucleation of the prostate. From 2008 to 2012 consecutive patients with benign prostatic obstruction undergoing diode laser prostate enucleation at our institution were enrolled for analysis. A single surgeon performed diode laser prostate enucleation with an end firing, continuous wave diode laser (980 nm). Based on preoperative prostate volume on transrectal ultrasound, patients were stratified into 2 groups, including group 1-65 with less than 60 ml and group 2-55 with 60 ml or greater. Baseline and perioperative characteristics, and postoperative surgical outcomes were compared between the 2 groups. A total of 120 men with a mean ± SD age of 70.2 ± 9.0 years were enrolled for analysis. Compared with group 1 patients, those in group 2 had larger mean total prostate volume (85.0 ± 24.6 vs 40.9 ± 10.8 ml), longer mean operative time (117.7 ± 48.2 vs 60.7 ± 25.0 minutes), higher mean retrieved prostate weight (37.3 ± 16.1 vs 12.5 ± 7.3 gm) and a higher mean tissue retrieval ratio (74.4% ± 22.2% vs 58.8% ± 23.2%, p laser energy, voiding function improvements and surgical complication rates of diode laser prostate enucleation were comparable in patients with a larger vs smaller prostate. Copyright © 2013 American Urological Association Education and Research, Inc. Published by Elsevier Inc. All rights reserved.

  14. XUV preionization effects in high power magnetically insulated diodes

    International Nuclear Information System (INIS)

    Maenchen, J.; Woodworth, J.R.; Foltz, B.W.

    1985-01-01

    Electrode surface desorption and photoionization by an intense XUV pulse has been shown to dramatically improve a vacuum diode impedance history. The 6-Terawatt Applied-B ion diode experiment on PBFA I is limited by a delay in both diode and ion current initiation. The insulation magnetic field impedes electron crossings which are believed to aid the ion source initiation. The diode is therefore initially a severe overmatch to the accelerator 40-nsec, 2.2-MV, 0.5-ohm pulse. The diode current increases during the pulse, leading to a rapidly falling impedance history. The application of an intense (30 to 50-kW/cm 2 ) XUV flux from an array of sixteen 60-kA spark sources is found to cause immediate diode current flow, resulting in both a greatly improved impedance history and the prompt initiation of an intense higher power ion beam

  15. Common rectifier diodes in temperature measurement applications below 50 K

    International Nuclear Information System (INIS)

    Jaervelae, J; Stenvall, A; Mikkonen, R

    2010-01-01

    In this paper we studied the use of common electronic semiconductor diodes in temperature measurements at cryogenic atmosphere. The motivation for this is the high price of calibrated cryogenic temperature sensors since there are some applications, like quench detection, in which a cheaper and a less accurate sensor would suffice. We measured the forward voltage as a function of temperature, V f (T), of several silicon rectifier diodes to determine the accuracy and interchangeability of the diodes. The experimental results confirmed that V f (T) of common rectifier diodes are similar to cryogenic sensor diodes, but the variability between two samples is much larger. The interchangeability of the diodes proved to be poor if absolute temperatures are to be measured. However for sensing changes in temperature they proved to be adequate and thus can be used to measure e.g. quench propagation or sense quench ignition at multiple locations with cheap price.

  16. Trap-induced photoconductivity in singlet fission pentacene diodes

    Energy Technology Data Exchange (ETDEWEB)

    Qiao, Xianfeng, E-mail: qiaoxianfeng@hotmail.com; Zhao, Chen; Chen, Bingbing; Luan, Lin [WuHan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wu Han 430074 (China)

    2014-07-21

    This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.

  17. Recent results from experimental and numerical investigations of the self-magnetically B{sub {Theta}}-insulated ion diode

    Energy Technology Data Exchange (ETDEWEB)

    Bauer, W; Hoppe, P; Bachmann, H [Forschungszentrum Karlsruhe (Germany); and others

    1997-12-31

    Comparison of the observed and calculated data of foil acceleration experiments on KALIF showed discrepancies which called for a re-investigation of the beam characteristics produced by the Bo-Diode. It was shown that the peak power density achieved in the focus is only 0.15 TW/cm{sup 2} and not 0.25 TW/cm{sup 2} as reported earlier. In addition, a most likely time history of the proton power density with a FWHM pulse duration of 60 ns in the focus was derived. The experiments led to a new description of the operating principle of this diode, which was confirmed by particle-in-cell-simulations. As a result of these considerations, suggestions for a new design of the diode were developed and investigated by simulations. (author). 7 figs., 6 refs.

  18. Diode laser to treat small oral vascular malformations: A prospective case series study.

    Science.gov (United States)

    Bacci, Christian; Sacchetto, Luca; Zanette, Gastone; Sivolella, Stefano

    2018-02-01

    The current work examined a consecutive series of patients presenting vascular malformations (VMs) and venous lakes (VLs) of the lip and oral mucosa who were treated with transmucosal diode laser applications and assessed over a 1 year period. Fifty-nine patients (31 males and 28 females) presenting low-flow VMs or VLs of the oral cavity were treated transmucosally using a diode laser (with an 830 nm operating wavelength and 1.6 W output power) with a 320 µm diameter flexible fiber. All the lesions were assessed 7 days, 30 days, and 1 year after the laser treatment, and the lesion reduction percentage was scored on a one to five scale. The patients were also asked to assess their pain perception daily during the 7 days following the treatment using a visual analog scale (VAS). There were no procedure-related intra- or post-operative complications; only modest pain intensity was reported. Thirty days after the treatment, lesion reduction was described as excellent or good in 52 cases; it was fair or poor in 7. Six patients (F:M ratio 2:4) required a second diode laser application. At the 1 year follow-up, volume reduction was complete in 48 out of 59 patients; there were five recurrences (F:M ratio 3:2). No relevant gender-related differences were noted. The use of diode laser application to treat small oral VMs and VLs was associated to shorter operating times and fewer postoperative complications with respect to the scapel surgery approach. More than one session may nevertheless be required if the anomaly is larger than 10 mm. Lasers Surg. Med. 50:111-116, 2018. © 2017 Wiley Periodicals, Inc. © 2017 Wiley Periodicals, Inc.

  19. Suppressed speckle contrast of blue light emission out of white lamp with phosphors excited by blue laser diodes for high-brightness lighting applications

    Science.gov (United States)

    Kinoshita, Junichi; Ikeda, Yoshihisa; Takeda, Yuji; Ueno, Misaki; Kawasaki, Yoji; Matsuba, Yoshiaki; Heike, Atsushi

    2012-11-01

    The speckle contrast of blue light emission out of high-brightness white lamps using phosphors excited by InGaN/GaN blue laser diodes is evaluated as a measure of coherence. As a result, speckle contrast of as low as 1.7%, the same level as a blue light emitting diode, is obtained. This implies that the original blue laser light can be converted into incoherent light through lamp structures without any dynamic mechanisms. This unique speckle-free performance is considered to be realized by multiple scattering inside the lamp structure, the multi-longitudinal mode operation of the blue laser diodes, and the use of multiple laser diodes. Such almost-incoherent white lamps can be applied for general lighting without any nuisance of speckle noise and should be categorized as lamps rather than lasers in terms of laser safety regulation.

  20. Comparative evaluation of diode laser ablation and surgical stripping technique for gingival depigmentation: A clinical and immunohistochemical study.

    Science.gov (United States)

    Bakutra, Gaurav; Shankarapillai, Rajesh; Mathur, Lalit; Manohar, Balaji

    2017-01-01

    There are various treatment modalities to remove the black patches of melanin pigmentation. The aim of the study is to clinically compare the diode laser ablation and surgical stripping technique for gingival depigmentation and to evaluate their effect on the histological changes in melanocyte activity. A total of 40 sites of 20 patients with bilateral melanin hyperpigmentation were treated with the surgical stripping and diode laser ablation technique. Change in Hedin index score, change in area of pigmentation using image analyzing software, pain perception, patient preference of treatment were recorded. All 40 sites were selected for immunohistochemical analysis using HMB-45 immunohistochemical marker. At 12 months post-operative visit, in all sites, repigmentation was observed with different grades of Hedin index. Paired t -test, analysis of variance, and Chi-square tests were used for statistical analysis. Repigmentation in surgical stripping is significantly lesser compared to laser ablation. Lesser numbers of melanocytes were found on immunohistological examination at 12 months postoperatively. Comparison for patient preference and pain indices give statistically significant values for diode laser techniques. Gingival hyperpigmentation is effectively managed by diode laser ablation technique and surgical stripping method. In this study, surgical stripping technique found to be better compared to diode laser ablation.

  1. Light Converting Inorganic Phosphors for White Light-Emitting Diodes

    OpenAIRE

    Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

    2010-01-01

    White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incand...

  2. Laser diagnostics on magnetically insulated flashover pulsed ion diodes

    International Nuclear Information System (INIS)

    Horioka, K.; Tazima, N.; Fukui, T.; Kasuya, K.

    1989-01-01

    Our recent experimental results on the characteristics of a flashover-type applied-B magnetically insulated pulsed ion diode are described. The main issues are to investigate the cause of impurity of the extracted beam and to examine the effect of neutral particles on the diode characteristics. In the experiment, our main efforts were placed on laser diagnostics of the diode gap behavior. (author)

  3. Semi-transparent all-oxide ultraviolet light-emitting diodes based on ZnO/NiO-core/shell nanowires

    Science.gov (United States)

    Shi, Zhi-Feng; Xu, Ting-Ting; Wu, Di; Zhang, Yuan-Tao; Zhang, Bao-Lin; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

    2016-05-01

    Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores.Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07236k

  4. Diode pumped cascade Er:Y2O3 laser

    International Nuclear Information System (INIS)

    Sanamyan, T

    2015-01-01

    A cascade, diode-pumped, continuous wave (CW), dual-wavelength operation in a 0.5% Er 3+ :Y 2 O 3 cryogenic ceramic laser is demonstrated for the first time. The laser operates on cascaded Er ( 4 I 11/2   →   4 I 13/2   →   4 I 15/2 ) transitions and can deliver 24 and 13 W at 1.6 and 2.7 μm, respectively. The overall efficiency with respect to the absorbed ∼980 nm power was 62%. This is, to our best knowledge, the first demonstration of an efficient, high power, cascade, erbium laser achieved in bulk solid-state lasers. The analysis of the output power, the laser’s wavelengths and slope efficiency for each individual laser transition are presented for pure CW operation mode. Also presented are the temporal behaviors of each laser line as a function of pump pulse duration in the quasi-CW regime. (letter)

  5. GaN-based superluminescent diodes with long lifetime

    Science.gov (United States)

    Castiglia, A.; Rossetti, M.; Matuschek, N.; Rezzonico, R.; Duelk, M.; Vélez, C.; Carlin, J.-F.; Grandjean, N.

    2016-02-01

    We report on the reliability of GaN-based super-luminescent light emitting diodes (SLEDs) emitting at a wavelength of 405 nm. We show that the Mg doping level in the p-type layers has an impact on both the device electro-optical characteristics and their reliability. Optimized doping levels allow decreasing the operating voltage on single-mode devices from more than 6 V to less than 5 V for an injection current of 100 mA. Furthermore, maximum output powers as high as 350 mW (for an injection current of 500 mA) have been achieved in continuous-wave operation (CW) at room temperature. Modules with standard and optimized p-type layers were finally tested in terms of lifetime, at a constant output power of 10 mW, in CW operation and at a case temperature of 25 °C. The modules with non-optimized p-type doping showed a fast and remarkable increase in the drive current during the first hundreds of hours together with an increase of the device series resistance. No degradation of the electrical characteristics was observed over 2000 h on devices with optimized p-type layers. The estimated lifetime for those devices was longer than 5000 h.

  6. Plasma-filled diode based on the coaxial gun

    Science.gov (United States)

    Zherlitsyn, A. A.; Kovalchuk, B. M.; Pedin, N. N.

    2012-10-01

    The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.

  7. Plasma-filled diode based on the coaxial gun.

    Science.gov (United States)

    Zherlitsyn, A A; Kovalchuk, B M; Pedin, N N

    2012-10-01

    The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.

  8. Plasma-filled diode based on the coaxial gun

    Energy Technology Data Exchange (ETDEWEB)

    Zherlitsyn, A. A.; Kovalchuk, B. M.; Pedin, N. N. [Institute of High Current Electronics, 2/3 Academichesky Avenue, 634055 Tomsk (Russian Federation)

    2012-10-15

    The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of {>=}1 MeV at the current of Almost-Equal-To 100 kA was obtained in the experiments with a plasma-filled diode. The energy of Almost-Equal-To 5 kJ with the peak power of {>=}100 GW dissipated in the diode.

  9. Plasma-filled diode based on the coaxial gun

    International Nuclear Information System (INIS)

    Zherlitsyn, A. A.; Kovalchuk, B. M.; Pedin, N. N.

    2012-01-01

    The paper presents the results of studies of a coaxial gun for a plasma-filled electron diode. Effects of the discharge channel diameter and gun current on characteristics of the plasma and pulse generated in the diode were investigated. The electron beam with maximum energy of ≥1 MeV at the current of ≈100 kA was obtained in the experiments with a plasma-filled diode. The energy of ≈5 kJ with the peak power of ≥100 GW dissipated in the diode.

  10. Investigation of Power Flow from a Plasma Opening Switch to an Electron Beam Diode

    National Research Council Canada - National Science Library

    Black, D

    1999-01-01

    ...) and an electron-beam (e-beam) diode load. The parameters that were varied independently in this set of experiments were the conduction time, the e-beam diode anode-cathode (A-K) gap (diode impedance...

  11. Magnetically insulated ion diode with a gas-breakdown plasma anode

    International Nuclear Information System (INIS)

    Greenly, J.B.; Ueda, M.; Rondeau, G.D.; Hammer, D.A.

    1987-12-01

    An active anode plasma source has been developed for use in a magnetically insulated ion diode operated on a 10 sup(10)W pulsed power generator. This source uses an inductive voltage from a single turn coil to break down an annular gas puff produced by a supersonic nozzle. The resulting plasma is magnetically driven toward the radial insulating magnetic field in the diode accelerating gap and stagnates at a well-defined surface after about 300ns to form a plasma anode layer defined by magnetic flux surfaces. An ion beam is then extracted from this plasma layer by applying a 150kV, 1 μs pulse to the accelerating gap. Optimization of the timing of the gas puff, the plasma production discharge and the high voltage pulse has resulted in 1μs duration 75-150KeV ion beam pulses with >100A/cm sup(2) peak ion current density over an area of about 400cm sup(2). Up to 5J/cm sup(2) has been collected by a 4cm sup(2) calorimeter. The diode impedance history can be varied so that rising, flat, and falling voltage pulse waveforms can be produced. Streak photographs of beamlets impinging on a scintillator and time integrated targets both show beam divergence angles ≤3 sup(0). However, under certain operating conditions, large excursions (∼25 sup(0)) in mean aiming angle on time scales of 20-200ns are observed. (author)

  12. 4H-SiC Schottky diode arrays for X-ray detection

    Energy Technology Data Exchange (ETDEWEB)

    Lioliou, G. [Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom); Chan, H.K. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Gohil, T. [Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom); Vassilevski, K.V.; Wright, N.G.; Horsfall, A.B. [School of Electrical and Electronic Engineering, Newcastle University, Newcastle upon Tyne NE1 7RU (United Kingdom); Barnett, A.M. [Semiconductor Materials and Devices Laboratory, School of Engineering and Informatics, University of Sussex, Falmer, Brighton BN1 9QT (United Kingdom)

    2016-12-21

    Five SiC Schottky photodiodes for X-ray detection have been electrically characterized at room temperature. One representative diode was also electrically characterized over the temperature range 20°C to 140 °C. The performance at 30 °C of all five X-ray detectors, in both current mode and for photon counting X-ray spectroscopy was investigated. The diodes were fabricated in an array form such that they could be operated as either a 2×2 or 1×3 pixel array. Although the devices showed double barrier heights, high ideality factors and higher than expected leakage current at room temperature (12 nA/cm{sup 2} at an internal electric field of 105 kV/cm), they operated as spectroscopic photon counting soft X-ray detectors uncooled at 30 °C. The measured energy resolution (FWHM at 17.4 keV, Mo Kα) varied from 1.36 to 1.68 keV among different diodes.

  13. Cascade Type-I Quantum Well GaSb-Based Diode Lasers

    Directory of Open Access Journals (Sweden)

    Leon Shterengas

    2016-05-01

    Full Text Available Cascade pumping of type-I quantum well gain sections was utilized to increase output power and efficiency of GaSb-based diode lasers operating in a spectral region from 1.9 to 3.3 μm. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Coated devices with an ~100-μm-wide aperture and a 3-mm-long cavity demonstrated continuous wave (CW output power of 1.96 W near 2 μm, 980 mW near 3 μm, 500 mW near 3.18 μm, and 360 mW near 3.25 μm at 17–20 °C—a nearly or more than twofold increase compared to previous state-of-the-art diode lasers. The utilization of the different quantum wells in the cascade laser heterostructure was demonstrated to yield wide gain lasers, as often desired for tunable laser spectroscopy. Double-step etching was utilized to minimize both the internal optical loss and the lateral current spreading penalties in narrow-ridge lasers. Narrow-ridge cascade diode lasers operate in a CW regime with ~100 mW of output power near and above 3 μm and above 150 mW near 2 μm.

  14. Treating Mucocele in Pediatric Patients Using a Diode Laser: Three Case Reports

    Directory of Open Access Journals (Sweden)

    Sara M. Bagher

    2018-05-01

    Full Text Available A mucocele is the most common minor salivary gland disease and among the most common biopsied oral lesions in pediatric patients. Clinically, a mucocele appears as a round well-circumscribed painless swelling ranging from deep blue to mucosa alike in color. Mucoceles rarely resolve on their own and surgical removal under local anesthesia is required in most cases. Different treatment options are described in the literature, including cryosurgery, intra-lesion injection of corticosteroid, micro-marsupialization and conventional surgical removal using a scalpel, and laser ablation. Therefore, the goal of this paper was to report three cases of mucocele removal in pediatric patients using a diode laser with a one-month follow-up. Mucoceles were removed by a pediatric dentist using a diode laser with a wavelength of 930 nm in continuous mode and a power setting of 1.8 Watts. In all cases, no bleeding occurred during or after the procedure and there was no need for suturing. On clinical examination during the one-month follow-up, in all three cases there was minimal or no scarring, minimal post-operative discomfort or pain, and no recurrence. Diode lasers provide an effective, rapid, simple, bloodless and well accepted procedure for treating mucocele in pediatric patients. Minimal post-operative discomfort and scarring was reported by all the three patients.

  15. Treating Mucocele in Pediatric Patients Using a Diode Laser: Three Case Reports.

    Science.gov (United States)

    Bagher, Sara M; Sulimany, Ayman M; Kaplan, Martin; Loo, Cheen Y

    2018-05-09

    A mucocele is the most common minor salivary gland disease and among the most common biopsied oral lesions in pediatric patients. Clinically, a mucocele appears as a round well-circumscribed painless swelling ranging from deep blue to mucosa alike in color. Mucoceles rarely resolve on their own and surgical removal under local anesthesia is required in most cases. Different treatment options are described in the literature, including cryosurgery, intra-lesion injection of corticosteroid, micro-marsupialization and conventional surgical removal using a scalpel, and laser ablation. Therefore, the goal of this paper was to report three cases of mucocele removal in pediatric patients using a diode laser with a one-month follow-up. Mucoceles were removed by a pediatric dentist using a diode laser with a wavelength of 930 nm in continuous mode and a power setting of 1.8 Watts. In all cases, no bleeding occurred during or after the procedure and there was no need for suturing. On clinical examination during the one-month follow-up, in all three cases there was minimal or no scarring, minimal post-operative discomfort or pain, and no recurrence. Diode lasers provide an effective, rapid, simple, bloodless and well accepted procedure for treating mucocele in pediatric patients. Minimal post-operative discomfort and scarring was reported by all the three patients.

  16. 980 nm high brightness external cavity broad area diode laser bar

    DEFF Research Database (Denmark)

    Vijayakumar, Deepak; Jensen, Ole Bjarlin; Thestrup Nielsen, Birgitte

    2009-01-01

    We demonstrate of-axis spectral beam combining applied to a 980 nm high power broad area diode laser bar. The experiments yielded 9 W of optical power at 30 A of operating current and the measured M2 values of the combined beam from 12 emitters were 1.9 and 6.4 for the fast and the slow axis......, respectively. The slow axis beam quality was 5-6 times better than the value obtained from a single emitter in free running mode. A high brightness of 79 MW/cm2-str was achieved using this configuration. To our knowledge, this is the highest brightness level ever achieved from a broad area diode laser bar....

  17. Defect engineering for 650 nm high-power AlGaInP laser diodes

    International Nuclear Information System (INIS)

    Kim, D.S.; Kim, K.C.; Shin, Y.C.; Kang, D.H.; Kim, B.J.; Kim, Y.M.; Park, Y.; Kim, T.G.

    2006-01-01

    To find the optimal growth and annealing conditions for high-power 650 nm band AlGaInP laser diodes, we carried out defect engineering, in which the distribution and density of deep level defects of the laser structure was analyzed. For this purpose, deep level transient spectroscopy (DLTS) measurements were carried out for each layer of the 650 nm band AlGaInP laser. By layer optimization at growth and annealing conditions, the laser diode was able operate stably and kink-free at high power over 220 mW at 70 deg. C. The characteristic temperatures (T ) were 212 K for 25-60 deg. C and 106 K over 60 deg. C

  18. Diode-pumped cw Nd:YAG three-level laser at 869 nm.

    Science.gov (United States)

    Lü, Yanfei; Xia, Jing; Cheng, Weibo; Chen, Jifeng; Ning, Guobin; Liang, Zuoliang

    2010-11-01

    We report for the first time (to our knowledge) a diode-pumped Nd:YAG laser emitting at 869 nm based on the (4)F(3/2)-(4)I(9/2) transition, generally used for a 946 nm emission. Power of 453 mW at 869 nm has been achieved in cw operation with a fiber-coupled laser diode emitting 35.4 W at 809 nm. Intracavity second-harmonic generation in the cw mode has also been demonstrated with power of 118 mW at 435 nm by using a BiB(3)O(6) nonlinear crystal. In our experiment, we used a LiNbO(3) crystal lens to complement the thermal lens of the laser rod, and we obtained good beam quality and high output power stability.

  19. Diode-pumped CW Nd:SGG laser at 1070 nm

    International Nuclear Information System (INIS)

    Liang, W; Sun, G C; Yu, X; Li, B Z; Jin, G Y

    2011-01-01

    We report for the first time (to our knowledge) a diode-pumped Nd:SGG laser emitting at 1070 nm. A power of 1.23 W at 1070 nm has been achieved in continuous-wave (CW) operation with a fiber-coupled laser diode emitting 18.2 W at 806 nm. Intracavity second-harmonic generation (SHG) in CW mode has also been demonstrated with a power of 328 mW at 535 nm by using a LiB 3 O 5 (LBO) nonlinear crystal. The green beam quality factor M 2 was less than 1.22. The green power stability was less 2.5% in 4 hour

  20. Diode-pumped femtosecond mode-locked Nd, Y-codoped CaF2 laser

    International Nuclear Information System (INIS)

    Zhu, Jiangfeng; Zhang, Lijuan; Gao, Ziye; Wang, Junli; Wang, Zhaohua; Wei, Zhiyi; Su, Liangbi; Zheng, Lihe; Wang, Jingya; Xu, Jun

    2015-01-01

    A passively mode-locked femtosecond laser based on an Nd, Y-codoped CaF 2 disordered crystal was demonstrated. The Y 3+ -codoping in Nd : CaF 2 markedly suppressed the quenching effect and improved the fluorescence quantum efficiency and emission spectra. With a fiber-coupled laser diode as the pump source, the continuous wave tuning range covering from 1042 to 1076 nm was realized, while the mode-locked operation generated 264 fs pulses with an average output power of 180 mW at a repetition rate of 85 MHz. The experimental results show that the Nd, Y-codoped CaF 2 disordered crystal has potential in a new generation diode-pumped high repetition rate chirped pulse amplifier. (letter)

  1. Surgical effects on soft tissue produced by a 405-nm violet diode laser in vivo

    Science.gov (United States)

    Miyazaki, H.; Kato, J.; Kawai, S.; Hatayama, H.; Uchida, K.; Otsuki, M.; Tagami, J.; Yokoo, S.

    2011-12-01

    This study evaluated the surgical performance of a 405-nm diode laser in vivo, using living rat liver tissue. Tissue was incised by irradiation with the laser at low output power ranging from 1 W (722 W/cm2) to 3 W (2165 W/cm2) on a manual control at a rate of 1 mm/s. As a control, incisions using a stainless scalpel were compared. Immediately after operation, the surface of the incisions was macroscopically observed and histopathologically evaluated by microscopy. Laser-ablated liver tissue was smooth with observable signs of remnant carbonization and easily acquired hemostasis. The thickness of the denatured layer increased in proportion to the output power; the coagulation layer did not thicken accordingly. Bleeding could not be stopped for tissues incised with the stainless scalpel. The 405-nm diode laser thus proved to be effective for ablating soft tissue with high hemostatic ability at low power.

  2. Waveguide photonic crystals with characteristics controlled with p-i-n diodes

    International Nuclear Information System (INIS)

    Usanov, D. A.; Skripal, A. V.; Abramov, A. V.; Bogolyubov, A. S.; Skvortsov, V. S.; Merdanov, M. K.

    2010-01-01

    A one-dimensional waveguide photonic structure-specifically, a photonic crystal with a controllable frequency characteristic-is designed. The central frequency of the spectral window of the photonic crystal can be tuned by choosing the parameters of disturbance of periodicity in the photonic crystal, whereas the transmission coefficient at a particular frequency can be controlled by varying the voltage at a p-i-n diode. It is shown that the possibility exists of using the waveguide photonic crystal to design a microwave device operating in the 3-cm-wavelength region, with a transmission band of 70 MHz at a level 3 dB and the transmission coefficient controllable in the range from -1.5 to -25 dB under variations in the forward voltage bias at the p-i-n diode from zero to 700 mV.

  3. Study of polarization phenomena in Schottky CdTe diodes using infrared light illumination

    Energy Technology Data Exchange (ETDEWEB)

    Sato, Goro, E-mail: gsato@astro.isas.jaxa.jp [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Fukuyama, Taro [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-0033 (Japan); Watanabe, Shin; Ikeda, Hirokazu; Ohta, Masayuki; Ishikawa, Shin' nosuke [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); Takahashi, Tadayuki [Institute of Space and Astronautical Science, Japan Aerospace Exploration Agency, 3-1-1 Yoshinodai, Chuo-ku, Sagamihara, Kanagawa 252-5210 (Japan); University of Tokyo, 7-3-1, Hongo, Bunkyo, Tokyo 113-0033 (Japan); Shiraki, Hiroyuki; Ohno, Ryoichi [ACRORAD Co., Ltd., 13-23 Suzaki, Uruma, Okinawa 904-2234 (Japan)

    2011-10-01

    Schottky CdTe diode detectors suffer from a polarization phenomenon, which is characterized by degradation of the spectral properties over time following exposure to high bias voltage. This is considered attributable to charge accumulation at deep acceptor levels. A Schottky CdTe diode was illuminated with an infrared light for a certain period during a bias operation, and two opposite behaviors emerged. The detector showed a recovery when illuminated after the bias-induced polarization had completely progressed. Conversely, when the detector was illuminated before the emergence of bias-induced polarization, the degradation of the spectral properties was accelerated. Interpretation of these effects and discussion on the energy level of deep acceptors are presented.

  4. Diode laser based resonance ionization mass spectrometry for spectroscopy and trace analysis of uranium isotopes

    International Nuclear Information System (INIS)

    Hakimi, Amin

    2013-01-01

    In this doctoral thesis, the upgrade and optimization of a diode laser system for high-resolution resonance ionization mass spectrometry is described. A frequency-control system, based on a double-interferometric approach, allowing for absolute stabilization down to 1 MHz as well as frequency detunings of several GHz within a second for up to three lasers in parallel was optimized. This laser system was used for spectroscopic studies on uranium isotopes, yielding precise and unambiguous level energies, total angular momenta, hyperfine constants and isotope shifts. Furthermore, an efficient excitation scheme which can be operated with commercial diode lasers was developed. The performance of the complete laser mass spectrometer was optimized and characterized for the ultra-trace analysis of the uranium isotope 236 U, which serves as a neutron flux dosimeter and tracer for radioactive anthropogenic contaminations in the environment. Using synthetic samples, an isotope selectivity of ( 236 U)/( 238 U) = 4.5(1.5) . 10 -9 was demonstrated.

  5. An overview of self-switching diode rectifiers using green materials

    Science.gov (United States)

    Kasjoo, Shahrir Rizal; Zailan, Zarimawaty; Zakaria, Nor Farhani; Isa, Muammar Mohamad; Arshad, Mohd Khairuddin Md; Taking, Sanna

    2017-09-01

    A unipolar two-terminal nanodevice, known as the self-switching diode (SSD), has recently been demonstrated as a room-temperature rectifier at microwave and terahertz frequencies due to its nonlinear current-voltage characteristic. The planar architecture of SSD not only makes the fabrication process of the device faster, simpler and at a lower cost when compared with other rectifying diodes, but also allows the use of various materials to realize and fabricate SSDs. This includes the utilization of `green' materials such as organic and graphene thin films for environmental sustainability. This paper reviews the properties of current `green' SSD rectifiers with respect to their operating frequencies and rectifying performances, including responsivity and noise-equivalent power of the devices, along with the applications.

  6. Generation of single-frequency tunable green light in a coupled ring tapered diode laser cavity

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Petersen, Paul Michael

    2013-01-01

    in the broad wavelength range from 1049 nm to 1093 nm and the beam propagation factor is improved from M2 = 2.8 to below 1.1. The laser frequency is automatically locked to the cavity resonance frequency using optical feedback. Furthermore, we show that this adaptive external cavity approach leads to efficient......We report the realization of a tapered diode laser operated in a coupled ring cavity that significantly improves the coherence properties of the tapered laser and efficiently generates tunable light at the second harmonic frequency. The tapered diode laser is tunable with single-frequency output...... frequency doubling. More than 500 mW green output power is obtained by placing a periodically poled LiNbO3 crystal in the external cavity. The single frequency green output from the laser system is tunable in the 530 nm to 533 nm range limited by the LiNbO3 crystal. The optical to optical conversion...

  7. THERMAL LENSING MEASUREMENTS IN THE ANISOTROPIC LASER CRYSTALS UNDER DIODE PUMPING

    Directory of Open Access Journals (Sweden)

    P. A. Loiko

    2012-01-01

    Full Text Available An experimental setup was developed for thermal lensing measurements in the anisotropic diode-pumped laser crystals. The studied crystal is placed into the stable two-mirror laser cavity operating at the fundamental transversal mode. The output beam radius is measured with respect to the pump intensity for different meridional planes (all these planes contain the light propagation direction. These dependencies are fitted using the ABCD matrix method in order to obtain the sensitivity factors showing the change of the optical power of thermal lens due to variation of the pump intensity. The difference of the sensitivity factors for two mutually orthogonal principal meridional planes describes the thermal lens astigmatism degree. By means of this approach, thermal lensing was characterized in the diode-pumped monoclinic Np-cut Nd:KGd(WO42 laser crystal at the wavelength of 1.067 μm for light polarization E || Nm.

  8. Development of diode-pumped solid-state laser HALNA for fusion reactor driver

    International Nuclear Information System (INIS)

    Kawashima, Toshiyuki; Kanabe, Tadashi; Matsumoto, Osamu

    2005-01-01

    The diode-pumped slab laser for inertial fusion energy driver has been demonstrated, which produces the 1053-nm output energy of 10 J at 10 Hz. The glass slab laser amplifier has been pumped by quasi-CW 290 kW AlGaAs laser-diode arrays at 803 nm. The optical system can compensate for thermal effects by use of zig-zag optical propagation, image-relayed telescope, and 45deg Faraday rotator. The output energy of 10.6 J at 1 Hz with the optical to optical conversion efficiency of 19.9% has been successfully obtained. Also the 10 Hz operation has been performed with a 5.1 J output energy. (author)

  9. High-speed and efficient silicon modulator based on forward-biased pin diodes

    Directory of Open Access Journals (Sweden)

    Suguru eAkiyama

    2014-11-01

    Full Text Available Silicon modulators, which use the free-carrier-plasma effect, were studied, both analytically and experimentally. It was demonstrated that the loss-efficiency product, a-VpL, was a suitable figure of merit for silicon modulators that enabled their intrinsic properties to be compared. Subsequently, the dependence of VpL on frequency was expressed by using the electrical parameters of a phase shifter when the modulator was operated by assuming a simple driving configuration. A diode-based modulator operated in forward biased mode was expected from analyses to provide more efficient operation than that in reversed mode at high frequencies due to its large capacitance. We obtained an a-VpL of 9.5 dB-V at 12.5 GHz in experiments by using the fabricated phase shifter with pin diodes operated in forward biased mode. This a-VpL was comparable to the best modulators operated in depletion mode. The modulator exhibited a clear eye opening at 56 Gb/s operated by 2 V peak-to-peak signals that was achieved by incorporating such a phase shifter into a ring resonator.

  10. Characterisation of diode-connected SiGe BiCMOS HBTs for space applications

    Science.gov (United States)

    Venter, Johan; Sinha, Saurabh; Lambrechts, Wynand

    2016-02-01

    Silicon-germanium (SiGe) bipolar complementary metal-oxide semiconductor (BiCMOS) transistors have vertical doping profiles reaching deeper into the substrate when compared to lateral CMOS transistors. Apart from benefiting from high-speed, high current gain and low-output resistance due to its vertical profile, BiCMOS technology is increasingly becoming a preferred technology for researchers to realise next-generation space-based optoelectronic applications. BiCMOS transistors have inherent radiation hardening, to an extent predictable cryogenic performance and monolithic integration potential. SiGe BiCMOS transistors and p-n junction diodes have been researched and used as a primary active component for over the last two decades. However, further research can be conducted with diode-connected heterojunction bipolar transistors (HBTs) operating at cryogenic temperatures. This work investigates these characteristics and models devices by adapting standard fabrication technology components. This work focuses on measurements of the current-voltage relationship (I-V curves) and capacitance-voltage relationships (C-V curves) of diode-connected HBTs. One configuration is proposed and measured, which is emitterbase shorted. The I-V curves are measured for various temperature points ranging from room temperature (300 K) to the temperature of liquid nitrogen (77 K). The measured datasets are used to extract a model of the formed diode operating at cryogenic temperatures and used as a standard library component in computer aided software designs. The advantage of having broad-range temperature models of SiGe transistors becomes apparent when considering implementation of application-specific integrated circuits and silicon-based infrared radiation photodetectors on a single wafer, thus shortening interconnects and lowering parasitic interference, decreasing the overall die size and improving on overall cost-effectiveness. Primary applications include space-based geothermal

  11. Diode laser prostatectomy (VLAP): initial canine evaluation

    Science.gov (United States)

    Kopchok, George E.; Verbin, Chris; Ayres, Bruce; Peng, Shi-Kaung; White, Rodney A.

    1995-05-01

    This study evaluated the acute and chronic effects of diode laser (960 nm) prostatectomy using a Prolase II fiber in a canine model (n equals 5). The laser fiber consists of a 1000 um quartz fiber which reflects a cone of laser energy, at 45 degree(s) to the axis of the fiber, into the prostatic urethra (Visual Laser Ablation of Prostate). Perineal access was used to guide a 15.5 Fr cystoscope to the level of the prostate. Under visual guidance and continual saline irrigation, 60 watts of laser power was delivered for 60 seconds at 3, 9, and 12 o'clock and 30 seconds at the 6 o'clock (posterior) positions for a total energy fluence of 12,600 J. One prostate received an additional 60 second exposure at 3 and 9 o'clock for a total fluence of 19,800 J. The prostates were evaluated at one day (n equals 1) and 8 weeks (n equals 4). The histopathology of laser effects at one day show areas of necrosis with loss of glandular structures and stromal edema. Surrounding this area was a zone of degenerative glandular structures extending up to 17.5 mm (cross sectional diameter). The histopathology of the 8 week laser treated animals demonstrated dilated prostatic urethras with maximum cross- sectional diameter of 23.4 mm (mean equals 18.5 +/- 3.9 mm). This study demonstrates the effectiveness of diode laser energy for prostatic tissue coagulation and eventual sloughing. The results also demonstrate the safety of diode laser energy, with similar tissue response as seen with Nd:YAG laser, for laser prostatectomy.

  12. Tunable Diode Laser Heterodyne Spectrophotometry of Ozone

    Science.gov (United States)

    Fogal, P. F.; McElroy, C. T.; Goldman, A.; Murcray, D. G.

    1988-01-01

    Tunable diode laser heterodyne spectrophotometry (TDLHS) has been used to make extremely high resolution (less than 0.0005/ cm) solar spectra in the 9.6 micron ozone band. Observations have shown that a signal-to-noise ratio of 95 : 1 (35% of theoretical) for an integration time of 1/8 second can be achieved at a resolution of 0.0005 wavenumbers. The spectral data have been inverted to yield a total column amount of ozone, in good agreement with that. measured at the nearby National Oceanographic and Atmospheric Administration (NOAA) ozone monitoring facility in Boulder, Colorado.

  13. Development on mini X-ray diode

    International Nuclear Information System (INIS)

    Jiang Shaoen; Sun Kexu; Peng Nengling; Huang Tianxuan; Cui Yanli; Yi Rongqing; Chen Jiusen

    2004-01-01

    The mini X-ray diode (M-XRD) was developed, and was used in mini soft X-ray spectrometer. Compared with traditional XRD, M-XRD's volume reduces to 1/30. M-XRD's property was experimentally examined on Shenguang II laser facility. The experimental results indicated that the temporal response and sensitivity of M-XRD are basically consistent with traditional XRD. The equivalent circuit of XRD was analyzed, and its response time and linear saturated current were calculated. (authors)

  14. Multifractal properties of resistor diode percolation.

    Science.gov (United States)

    Stenull, Olaf; Janssen, Hans-Karl

    2002-03-01

    Focusing on multifractal properties we investigate electric transport on random resistor diode networks at the phase transition between the nonpercolating and the directed percolating phase. Building on first principles such as symmetries and relevance we derive a field theoretic Hamiltonian. Based on this Hamiltonian we determine the multifractal moments of the current distribution that are governed by a family of critical exponents [psi(l)]. We calculate the family [psi(l)] to two-loop order in a diagrammatic perturbation calculation augmented by renormalization group methods.

  15. Evaluation of automatic densitometer with laser diode

    International Nuclear Information System (INIS)

    Larrea Cox, Pedro J.; Hernandez Tabares, Lorenzo; Suarez San Pedro, Cirilo E.; Vazquez Cano, Aradys; Reyes Rodriguez, Marlen de los

    2009-01-01

    The evaluation of a prototype of an automatic transmission scanning densitometer is presented. It contains a semiconductor diode laser as a light source, and is mainly oriented to the analysis of protein electrophoresis. It was developed on the Center for Technological Applications and Nuclear Development (CEADEN). Its technical specifications were established and certified by the National Institute of Researches on Metrology (INIMET), and also the equipment was submitted for assays to the Process Control Laboratory, that belongs to the 'Adalberto Pesant' Enterprise for Sera and Hemo derivatives Products, in Havana city, where it was employed to the partial quality control of products that are made there, achieving satisfactory results. (Author)

  16. Efficient organic light emitting-diodes (OLEDs)

    CERN Document Server

    Chang, Yi-Lu

    2015-01-01

    Following two decades of intense research globally, the organic light-emitting diode (OLED) has steadily emerged as the ultimate display technology of choice for the coming decades. Portable active matrix OLED displays have already become prevalent, and even large-sized ultra-high definition 4K TVs are being mass-produced. More exotic applications such as wearable displays have been commercialized recently. With the burgeoning success in displays, researchers are actively bringing the technology forward into the exciting solid-state lighting market. This book presents the knowledge needed for

  17. Laser materials processing with diode lasers

    OpenAIRE

    Li, Lin; Lawrence, Jonathan; Spencer, Julian T.

    1996-01-01

    Laser materials processing is currently dominated by CO2, Nd-YAG and Excimer lasers. Continuous advances in semiconductor laser technology over the last decade have increased the average power output of the devices annualy by two fold, resulting in the commercial availability of the diode lasers today with delivery output powers in excess of 60W in CW mode and 5kW in qasi-CW mode. The advantages of compactness, high reliability, high efficiency and potential low cost, due to the mass producti...

  18. Junction depth dependence of breakdown in silicon detector diodes

    International Nuclear Information System (INIS)

    Beck, G.A.; Carter, A.A.; Carter, J.R.; Greenwood, N.M.; Lucas, A.D.; Munday, D.J.; Pritchard, T.W.; Robinson, D.; Wilburn, C.D.; Wyllie, K.

    1996-01-01

    The high voltage capability of detector diodes fabricated in the planar process is limited by the high field generated at the edge of the junction.We have fabricated diodes with increased junction depth with respect to our standard process and find a significantly higher breakdown voltage,in reasonable agreement with previous studies of junction breakdown. (orig.)

  19. Zener diode controls switching of large direct currents

    Science.gov (United States)

    1965-01-01

    High-current zener diode is connected in series with the positive input terminal of a dc supply to block the flow of direct current until a high-frequency control signal is applied across the zener diode. This circuit controls the switching of large dc signals.

  20. A novel diode laser system for photodynamic therapy

    DEFF Research Database (Denmark)

    Samsøe, E.; Andersen, P. E.; Petersen, P.

    2001-01-01

    In this paper a novel diode laser system for photodynamic therapy is demonstrated. The system is based on linear spatial filtering and optical phase conjugate feedback from a photorefractive BaTiO3 crystal. The spatial coherence properties of the diode laser are significantly improved. The system...

  1. Electron sheath collapse in an applied-B ion diode

    International Nuclear Information System (INIS)

    Grechikha, A.V.

    1996-01-01

    The effect of the electron sheath collapse in an applied-B ion diode due to the presence of the resistive anode plasma layer was found. This effect is more damaging at higher diode voltages and may be responsible for the parasitic load effect observed in the experiments. (author). 4 figs., 2 refs

  2. The electron irradiation effects in different structures of diodes

    International Nuclear Information System (INIS)

    Li Quanfen; Wang Jiaxu

    1993-01-01

    This paper describes the different electron irradiation effects in different structures of diodes and the different results produced by different irradiation ways. From this work, we can know how to choose proper manufacture arts and comprehensive factors according to the structures of diodes and the irradiation conditions

  3. Compact green-diode-based lasers for biophotonic bioimaging

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Hansen, Anders Kragh; Petersen, Paul Michael

    2014-01-01

    Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers.......Diode lasers simultaneously offer tunability, high-power emission, and compact size at fairly low cost and are increasingly preferred for pumping titanium:sapphire lasers....

  4. Diode Laser for Laryngeal Surgery: a Systematic Review.

    Science.gov (United States)

    Arroyo, Helena Hotz; Neri, Larissa; Fussuma, Carina Yuri; Imamura, Rui

    2016-04-01

    Introduction The diode laser has been frequently used in the management of laryngeal disorders. The portability and functional diversity of this tool make it a reasonable alternative to conventional lasers. However, whether diode laser has been applied in transoral laser microsurgery, the ideal parameters, outcomes, and adverse effects remain unclear. Objective The main objective of this systematic review is to provide a reliable evaluation of the use of diode laser in laryngeal diseases, trying to clarify its ideal parameters in the larynx, as well as its outcomes and complications. Data Synthesis We included eleven studies in the final analysis. From the included articles, we collected data on patient and lesion characteristics, treatment (diode laser's parameters used in surgery), and outcomes related to the laser surgery performed. Only two studies were prospective and there were no randomized controlled trials. Most of the evidence suggests that the diode laser can be a useful tool for treatment of different pathologies in the larynx. In this sense, the parameters must be set depending on the goal (vaporization, section, or coagulation) and the clinical problem. The literature lacks studies on the ideal parameters of the diode laser in laryngeal surgery. The available data indicate that diode laser is a useful tool that should be considered in laryngeal surgeries. Thus, large, well-designed studies correlated with diode compared with other lasers are needed to better estimate its effects.

  5. Electron sheath collapse in an applied-B ion diode

    Energy Technology Data Exchange (ETDEWEB)

    Grechikha, A V [Forschungszentrum Karlsruhe (Germany). Institut fuer Neutronenphysik und Reaktortechnik

    1997-12-31

    The effect of the electron sheath collapse in an applied-B ion diode due to the presence of the resistive anode plasma layer was found. This effect is more damaging at higher diode voltages and may be responsible for the parasitic load effect observed in the experiments. (author). 4 figs., 2 refs.

  6. Diode-pumped 2.8-μm laser emission from Er/sup 3+/:YLF at room temperature

    International Nuclear Information System (INIS)

    Kintz, G.J.; Allen, R.; Esterowitz, L.

    1987-01-01

    This paper details laser emission from an erbium-doped LiYF/sub 4/ sample longitudinally pumped at room temperature with a laser diode array observed in both pulsed and cw pumping. The threshold for pulsed emission is much less than for cw emission due to the lifetime of the terminal laser level being longer than the upper laser level. Depopulation of the lower laser level, which permits cw operation, is due to a cooperative upconversion process. The threshold energy for pulsed emission is 28 μJ when pumped with a 300-μs diode pulse. At 147 mW of diode power the threshold for cw emission occurs. The system relaxes to a steady state after 40 ms. The threshold for cw emission corresponds to --62 mW of diode power being absorbed into the crystal. Pulsed outputs of 21 μJ and cw outputs of 180 μW have been obtained. These low outputs and correspondingly low efficiencies are due to currently operating near threshold and in the self-terminating mode of the laser system. Higher concentrations and higher pumping rates should significantly improve the efficiency

  7. Asymmetric anode and cathode extraction structure fast recovery diode

    Science.gov (United States)

    Xie, Jiaqiang; Ma, Li; Gao, Yong

    2018-05-01

    This paper presents an asymmetric anode structure and cathode extraction fast and soft recovery diode. The device anode is partial-heavily doped and partial-lightly doped. The P+ region is introduced into the cathode. Firstly, the characteristics of the diode are simulated and analyzed. Secondly, the diode was fabricated and its characteristics were tested. The experimental results are in good agreement with the simulation results. The results show that, compared with the P–i–N diode, although the forward conduction characteristic of the diode is declined, the reverse recovery peak current is reduced by 47%, the reverse recovery time is shortened by 20% and the softness factor is doubled. In addition, the breakdown voltage is increased by 10%. Project supported by the National Natural Science Foundation of China (No. 51177133).

  8. Production of ion beam by conical pinched electron beam diode

    International Nuclear Information System (INIS)

    Matsukawa, Y.; Nakagawa, Y.

    1982-01-01

    Some properties of the ion beam produced by pinched electron beam diode having conical shape electrodes and organic insulator anode was studied. Ion energy is about 200keV and the peak diode current is about 30 kA. At 11cm from the diode apex, not the geometrical focus point, concentrated ion beam was obtained. Its density is more than 500A/cm 2 . The mean ion current density within the radius of 1.6cm around the axis from conical diode is two or three times that from an usual pinched electron beam diode with flat parallel electrodes of same dimension and impedance under the same conditions. (author)

  9. Silicon monolithic microchannel-cooled laser diode array

    International Nuclear Information System (INIS)

    Skidmore, J. A.; Freitas, B. L.; Crawford, J.; Satariano, J.; Utterback, E.; DiMercurio, L.; Cutter, K.; Sutton, S.

    2000-01-01

    A monolithic microchannel-cooled laser diode array is demonstrated that allows multiple diode-bar mounting with negligible thermal cross talk. The heat sink comprises two main components: a wet-etched Si layer that is anodically bonded to a machined glass block. The continuous wave (cw) thermal resistance of the 10 bar diode array is 0.032 degree sign C/W, which matches the performance of discrete microchannel-cooled arrays. Up to 1.5 kW/cm 2 is achieved cw at an emission wavelength of ∼808 nm. Collimation of a diode array using a monolithic lens frame produced a 7.5 mrad divergence angle by a single active alignment. This diode array offers high average power/brightness in a simple, rugged, scalable architecture that is suitable for large two-dimensional areas. (c) 2000 American Institute of Physics

  10. Diode Laser Application in Soft Tissue Oral Surgery

    Science.gov (United States)

    Azma, Ehsan; Safavi, Nassimeh

    2013-01-01

    Introduction: Diode laser with wavelengths ranging from 810 to 980 nm in a continuous or pulsed mode was used as a possible instrument for soft tissue surgery in the oral cavity. Discussion: Diode laser is one of laser systems in which photons are produced by electric current with wavelengths of 810, 940 and 980nm. The application of diode laser in soft tissue oral surgery has been evaluated from a safety point of view, for facial pigmentation and vascular lesions and in oral surgery excision; for example frenectomy, epulis fissuratum and fibroma. The advantages of laser application are that it provides relatively bloodless surgical and post surgical courses with minimal swelling and scarring. We used diode laser for excisional biopsy of pyogenic granuloma and gingival pigmentation. Conclusion: The diode laser can be used as a modality for oral soft tissue surgery PMID:25606331

  11. High-power green diode laser systems for biomedical applications

    DEFF Research Database (Denmark)

    Müller, André

    propagation parameters and therefore efficiently increases the brightness of compact and cost-effective diode laser systems. The condition of overlapping beams is an ideal scenario for subsequent frequency conversion. Based on sum-frequency generation of two beam combined diode lasers a 3.2 fold increase...... output power of frequency doubled single emitters is limited by thermal effects potentially resulting in laser degradation and failure. In this work new concepts for power scaling of visible diode laser systems are introduced that help to overcome current limitations and enhance the application potential....... Implementing the developed concept of frequency converted, beam combined diode laser systems will help to overcome the high pump thresholds for ultrabroad bandwidth titanium sapphire lasers, leading towards diode based high-resolution optical coherence tomography with enhanced image quality. In their entirety...

  12. Design and construction of a novel 1H/19F double-tuned coil system using PIN-diode switches at 9.4T.

    Science.gov (United States)

    Choi, Chang-Hoon; Hong, Suk-Min; Ha, YongHyun; Shah, N Jon

    2017-06-01

    A double-tuned 1 H/ 19 F coil using PIN-diode switches was developed and its performance evaluated. The is a key difference from the previous developments being that this design used a PIN-diode switch in series with an additionally inserted inductor in parallel to one of the capacitors on the loop. The probe was adjusted to 19 F when the reverse bias voltage was applied (PIN-diode OFF), whilst it was switched to 1 H when forward current was flowing (PIN-diode ON). S-parameters and Q-factors of single- and double-tuned coils were examined and compared with/without a phantom on the bench. Imaging experiments were carried out on a 9.4T preclinical scanner. All coils were tuned at resonance frequencies and matched well. It is shown that the Q-ratio and SNR of double-tuned coil at 19 F frequency are nearly as good as those of a single-tuned coil. Since the operating frequency was tuned to 19 F when the PIN-diodes were turned off, losses due to PIN-diodes were substantially lower resulting in the provision of excellent image quality of X-nuclei. Copyright © 2017 Elsevier Inc. All rights reserved.

  13. Control by hardware of government systems for laser diodes with STM32F4 and Peltier cells

    International Nuclear Information System (INIS)

    Ulloa Solano, Natalia Irina

    2013-01-01

    A low cost prototype of a government system is developed for laser diodes with STM32F4 microcontrollers and Peltier cooling. Commercial and homemade government system (with STM32F4 microcontrollers ) are investigated with the objective of adequately control the current of a laser diode. Characteristics of STM32F4 microcontrollers are described. The low cost platforms as the Arduino and Raspberry Pi are compared. A bibliographical and documentary compilation is realized for the preliminary study of the components and tools to use in the prototype. The theory related with the heat transfer between a laser diode and the outside, and a Peltier cell and outside is summarized. A heat dissipation model is proposed of a system formed by a laser diode and Peltier cell. A control system of current and fed back temperature is designed and implemented to allow adequately control laser diodes without and with photodiode (2 pickups and 3 pickups respectively). The viability of control with free software is studied and corroborated. The temperature control of the laser diode using a Peltier cell as cooler has been possible through a simple control of ON/OFF mode. The integration of devices such as ADC, DAC, timers and facilities of STM32F4 microcontroller, have allowed to optimize costs by hardware, save time and costs. Also, the incorporation of the Cortex-M4 processor has optimized the consumption of operational resources and has executed much of its instruction set of efficient way. Because of this, the project has complied with its maximum as to low cost is concerned [es

  14. Development of a semiconductor neutron dosimeter with a PIN diode

    International Nuclear Information System (INIS)

    Kim, Seungho; Lee, Namho; Cho, Jaiwan; Youk, Geunuck

    2004-01-01

    When a Si PIN diode is exposed to fast neutrons, it produces displacement in Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed, and multi PIN diode arrays with various intrinsic layer (I layer) thicknesses and cross sections were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have good characteristics of linearity in a neutron irradiation experiment and give results that the increase of thickness of I layer and the decrease of the cross-section of the PIN diodes improve the sensitivity. Newly developed PIN diodes with a thicker I layer and various cross sections were retested and showed the best neutron sensitivity in the condition that the I layer thickness was similar to the length of a side of the cross-section. On the basis of two test results, final PIN diodes with a rectangular shape were manufactured and the characteristics for neutron detectors were analyzed through the neutron beam test using the on-line electronic dosimetry system. The developed PIN diode shows a good linearity to absorbed dose in the range of 0 to 1,000cGy (Tissue) and its neutron sensitivity is 13 mV/cGy at a constant current of 5 mA, that is three higher than that of similar commercially developed neutron detectors. Moreover the device shows less dependency on the orientation of the neutron beam and a considerable stability in an annealing test for a long period. (author)

  15. Patient dosimetry quality assurance program with a commerical diode system

    International Nuclear Information System (INIS)

    Lee, P.C.; Sawicka, J.M.; Glasgow, G.P.

    1994-01-01

    The purpose was to evaluate a commercial silicone diode dosimeter for a patient dosimetry quality assurance program. The diode dosimeter was calibrated against an ion chamber, and percentage depth dose, linearity, anisotrophy, virtual source position, and field size factor studies were performed. Correction factors for lack of full scatter medium in the diode entrance and exit dose measurements were acquired. Dosimetry equations were proposed for calculation of dose delivered at isocenter. Diode dose accuracy and reproducibility were tested on phantom and on four patients. A patient dosimetry quality assurance program based on diode-measured dose was instituted and patient dose data were collected. Diode measured percentage depth dose and field factors agreed to within 3% with those measured with an ion chamber. The diode exhibited less than 1.7% angular dose anisotrophy and less than 0.5% nonlinearity up to 4 Gy. Diode dose measurements in phantom showed that the calculated doses differed from the prescribed dose by less than 1.%; the diode exhibited a daily dose reproducibility of better than 0.2%. On four selected patients, the measured dose reproducibility was 1.5%; the average calculated doses were all within ± 7% of the prescribed doses. For 33 of 40 patients treated with a 6 MW beam, measured doses were within ± 7% of the prescribed doses. For 11 out of 12 patients, a second repeat measurements yielded doses within ± 7% of the prescribed doses. The proposed diode-based patient dosimetry quality assurance program with dose tolerance at ± 7% is simple and feasible. It is capable of detecting certain serious treatment errors such as incorrect daily dose greater than 7%, incorrect wedge use, incorrect photon energy and patient setup errors involving some incorrect source-to-surface-distance vs. source-to-axis-distance treatments. 13 refs., 5 figs., 5 tabs

  16. Fabrication and characterization of NiO based metal-insulator-metal diode using Langmuir-Blodgett method for high frequency rectification

    Science.gov (United States)

    Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

    2018-04-01

    Thin film metal-insulator-metal (MIM) diodes have attracted significant attention for use in infrared energy harvesting and detection applications. As demonstrated over the past decades, MIM or metal-insulator-insulator-metal (MIIM) diodes can operate at the THz frequencies range by quantum tunneling of electrons. The aim of this work is to synthesize required ultra-thin insulating layers and fabricate MIM diodes using the Langmuir-Blodgett (LB) technique. The nickel stearate (NiSt) LB precursor film was deposited on glass, silicon (Si), ITO glass and gold coated silicon substrates. The photodesorption (UV exposure) and the thermodesorption (annealing at 100 °C and 350 °C) methods were used to remove organic components from the NiSt LB film and to achieve a uniform homogenous nickel oxide (NiO) film. These ultrathin NiO films were characterized by EDS, AFM, FTIR and cyclic voltammetry methods, respectively. The MIM diode was fabricated by depositing nickel (Ni) on the NiO film, all on a gold (Au) plated silicon (Si) substrate. The current (I)-voltage (V) characteristics of the fabricated diode were studied to understand the conduction mechanism assumed to be tunneling of electron through the ultra-thin insulating layer. The sensitivity of the diode was measured to be as high as 35 V-1. The diode resistance was ˜100 ohms (at a bias voltage of 0.60 V), and the rectification ratio was about 22 (for a signal voltage of ±200 mV). At the bias point, the diode response demonstrated significant non-linearity and high asymmetry, which are very desirable characteristics for applications in infrared detection and harvesting.

  17. Fabrication and characterization of NiO based metal−insulator−metal diode using Langmuir-Blodgett method for high frequency rectification

    Directory of Open Access Journals (Sweden)

    Ibrahim Azad

    2018-04-01

    Full Text Available Thin film metal–insulator–metal (MIM diodes have attracted significant attention for use in infrared energy harvesting and detection applications. As demonstrated over the past decades, MIM or metal-insulator-insulator-metal (MIIM diodes can operate at the THz frequencies range by quantum tunneling of electrons. The aim of this work is to synthesize required ultra-thin insulating layers and fabricate MIM diodes using the Langmuir-Blodgett (LB technique. The nickel stearate (NiSt LB precursor film was deposited on glass, silicon (Si, ITO glass and gold coated silicon substrates. The photodesorption (UV exposure and the thermodesorption (annealing at 100 °C and 350 °C methods were used to remove organic components from the NiSt LB film and to achieve a uniform homogenous nickel oxide (NiO film. These ultrathin NiO films were characterized by EDS, AFM, FTIR and cyclic voltammetry methods, respectively. The MIM diode was fabricated by depositing nickel (Ni on the NiO film, all on a gold (Au plated silicon (Si substrate. The current (I-voltage (V characteristics of the fabricated diode were studied to understand the conduction mechanism assumed to be tunneling of electron through the ultra-thin insulating layer. The sensitivity of the diode was measured to be as high as 35 V-1. The diode resistance was ∼100 ohms (at a bias voltage of 0.60 V, and the rectification ratio was about 22 (for a signal voltage of ±200 mV. At the bias point, the diode response demonstrated significant non-linearity and high asymmetry, which are very desirable characteristics for applications in infrared detection and harvesting.

  18. Electron beam diodes using ferroelectric cathodes

    International Nuclear Information System (INIS)

    Ivers, J.D.; Schaechter, L.; Nation, J.A.; Kerslick, G.S.

    1993-01-01

    A new high current density electron source is investigated. The source consists of a polarized ceramic disk with aluminum electrodes coated on both faces. The front electrode is etched in a periodic grid to expose the ceramic beneath. A rapid change in the polarization state of the ceramic results in the emission of a high density electron cloud into a 1 to 10mm diode gap. The anode potential is maintained by a charged transmission line. Some of the emitted electrons traverse the gap and an electron current flows. The emitted electron current has been measured as a function of the gap spacing and the anode potential. Current densities in excess of 70 A/cm 2 have been measured. The current is found to vary linearly with the anode voltage for gaps < 10 mm, and exceeds the Child-Langmuir current by at least two orders of magnitude. The experimental data will be compared with predictions from a model based on the emission of a cloud of electrons from the ferroelectric which in turn reflex in the diode gap

  19. Low level diode laser accelerates wound healing.

    Science.gov (United States)

    Dawood, Munqith S; Salman, Saif Dawood

    2013-05-01

    The effect of wound illumination time by pulsed diode laser on the wound healing process was studied in this paper. For this purpose, the original electronic drive circuit of a 650-nm wavelength CW diode laser was reconstructed to give pulsed output laser of 50 % duty cycle and 1 MHz pulse repetition frequency. Twenty male mice, 3 months old were used to follow up the laser photobiostimulation effect on the wound healing progress. They were subdivided into two groups and then the wounds were made on the bilateral back sides of each mouse. Two sessions of pulsed laser therapy were carried along 15 days. Each mice group wounds were illuminated by this pulsed laser for 12 or 18 min per session during these 12 days. The results of this study were compared with the results of our previous wound healing therapy study by using the same type of laser. The mice wounds in that study received only 5 min of illumination time therapy in the first and second days of healing process. In this study, we found that the wounds, which were illuminated for 12 min/session healed in about 3 days earlier than those which were illuminated for 18 min/session. Both of them were healed earlier in about 10-11 days than the control group did.

  20. Ion divergence in magnetically insulated diodes

    International Nuclear Information System (INIS)

    Slutz, S.A.; Lemke, R.W.; Pointon, T.D.; Desjarlais, M.P.; Johnson, D.J.; Mehlhorn, T.A.; Filuk, A.; Bailey, J.

    1995-01-01

    Magnetically insulated ion diodes are being developed to drive inertial confinement fusion. Ion beam microdivergence must be reduced to achieve the very high beam intensities required to achieve this goal. Three-dimensional particle-in-cell simulations indicate that instability induced fluctuations can produce significant ion divergence during acceleration. These simulations exhibit a fast growing mode early in time, which has been identified as the diocotron instability. The divergence generated by this mode is modest due to the relatively high frequency (>1GHz). Later, a low-frequency low-phase-velocity instability develops. This instability couples effectively to the ions, since the frequency is approximately the reciprocal of the ion transit time, and can generate unacceptably large ion divergences (>30 mrad). Linear stability theory reveals that this mode requires perturbations parallel to the applied magnetic field and is related to the modified two stream instability. Measurements of ion density fluctuations and energy-momentum correlations have confirmed that instabilities develop in ion diodes and contribute to the ion divergence. In addition, spectroscopic measurements indicate that the ions have a significant transverse temperature very close to the emission surface. Passive lithium fluoride (LiF) anodes have larger transverse beam temperatures than laser irradiated active sources. Calculations of source divergence expected from the roughness of LiF surfaces and the possible removal of this layer is presented