WorldWideScience

Sample records for single-pass diode optical

  1. Single Pass Optical Profile Monitoring

    CERN Document Server

    Jung, R; Hutchins, Stephen

    2003-01-01

    Beam profiles are acquired in transfer lines to monitor extracted beams and compute their emittance. Measurements performed on the first revolutions of a ring will evaluate the matching of a chain of accelerators. Depending on the particle type and energy, these measurements are in general performed with screens, making either use of Luminescence or Optical Transition Radiation [OTR], and the generated beam images are acquired with sensors of various types. Sometimes the beam position is also measured this way. The principle, advantages and disadvantages of both families of screens will be discussed in relation with the detectors used. Test results with beam and a possible evaluation method for luminescent screens will be presented. Finally other optical methods used will be mentioned for completeness.

  2. Non-linear optics for the final focus of the single-pass-collider

    International Nuclear Information System (INIS)

    Brown, K.L.; Spencer, J.E.

    1981-02-01

    The purpose of the final focus system (FFS) is to demagnify the beam envelope in the Collider arc lattice to a size suitable for beam collisions at the interaction region. The final spot size is determined by the beam emittance, the beta function β* at the IR, the momentum spread in the beam, and the quality of the FFS optics. In particular, if the focusing system is not chromatically corrected, the momentum dispersion in the beam can lead to a substantial degradation in the quality of the final focus. The objective is to design a FFS for 50 GeV/c within approx. 100 meters having an IR spot size sigma/sub xy/ of approximately 2 μm for a beam emittance of epsilon = 3 x 10 -10 m-rad and a momentum spread of delta = +-0.5%. This requires a β/sub x,y/ equal to or less than 1 cm. This report considers the problems encountered in the design of a final focus system that will reliably provide the desired beam size for collisions

  3. {open_quotes}Optical guiding{close_quotes} limits on extraction efficiencies of single-pass, tapered wiggler amplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Fawley, W.M. [Lawrence Berkeley Lab., CA (United States)

    1995-12-31

    Single-pass, tapered wiggler amplifiers have an attractive feature of being able, in theory at least, of extracting a large portion of the electron beam energy into light. In circumstances where an optical FEL`s wiggler length is significantly longer than the Rayleigh length Z{sub R} corresponding to the electron beam radius, diffraction losses must be controlled via the phenomenon of {open_quotes}optical guiding{close_quotes}. Since the strength of the guiding depends upon the effective refractive index {eta}{sub r} exceeding one, and since ({eta}{sub r}-1) is inversely proportional to the optical electric field, there is a natural {open_quotes}limiting{close_quotes} mechanism to the on-axis field strength and thus the rate at which energy may be extracted from the electron beam. In particular, the extraction efficiency for a prebunched beam asymptotically grows linearly with z rather than quadratically. We present analytical and numerical simulation results concerning this behavior and discuss its applicability to various FEL designs including oscillator/amplifier-radiator configurations.

  4. Development of laser diode pumped solid state green laser for the pumping of wavelength tunable laser. 1. Development of single-pass Nd:YAG MOPA system

    Energy Technology Data Exchange (ETDEWEB)

    Maruyama, Yoichiro; Kato, Masaaki; Oba, Masaki [Japan Atomic Energy Research Inst., Tokai, Ibaraki (Japan). Tokai Research Establishment

    1998-06-01

    For the pumping of wavelength tunable laser, a high repetition rate, high average power solid state laser pumped by a high duty laser diode (LD) array has been developed. The solid state laser using Nd:YAG zigzag slab crystals consists of an oscillator and an amplifier. Using this Nd:YAG MOPA system, the maximum fundamental average power of 33 W is obtained. The wavefront distortion of amplified laser beam is within 0.3 wavelength. M{sup 2} measured is about 1.5 which means the laser beam is near diffraction limited. By using nonlinear crystals, fundamental laser radiation is converted to second, third and fourth harmonics. The average power is 15.5 W at 532 nm, 1.2 W at 355 nm and 2.3 W at 266 nm. The beam quality of the second harmonic is good. With the measurement of the laser parameters, it is confirmed that the high repetition rate, high power and high quality second harmonic can be produced by the LD pumped Nd:YAG laser MOPA system. (author)

  5. Few-photon optical diode

    OpenAIRE

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficie...

  6. Development of a Single-Pass Amplifier for an Optical Stochastic Cooling Proof-of-Principle Experiment at Fermilab's IOTA Facility

    Energy Technology Data Exchange (ETDEWEB)

    Andorf, M. B. [NICADD, DeKalb; Lebedev, V. A. [Fermilab; Piot, P. [NIU, DeKalb

    2015-06-01

    Optical stochastic cooling (OSC) is a method of beam cooling which is expected to provide cooling rates orders of magnitude larger than ordinary stochastic cooling. Light from an undulator (the pickup) is amplified and fed back onto the particle beam via another undulator (the kicker). Fermilab is currently exploring a possible proof-of-principle experiment of the OSC at the integrable-optics test accelerator (IOTA) ring. To implement effective OSC a good correction of phase distortions in the entire band of the optical amplifier is required. In this contribution we present progress in experimental characterization of phase distortions associated to a Titanium Sapphire crystal laser-gain medium (a possible candidate gain medium for the OSC experiment to be performed at IOTA). We also discuss a possible option for a mid-IR amplifier

  7. An all-silicon passive optical diode.

    Science.gov (United States)

    Fan, Li; Wang, Jian; Varghese, Leo T; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M; Qi, Minghao

    2012-01-27

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.

  8. An All-Silicon Passive Optical Diode

    OpenAIRE

    Fan, Li; Wang, Jian; Varghese, Leo T.; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M.; Qi, Minghao

    2011-01-01

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input pow...

  9. EMISAR single pass topographic SAR interferometer modes

    DEFF Research Database (Denmark)

    Madsen, Søren Nørvang; Skou, Niels; Woelders, Kim

    1996-01-01

    The Danish Center for Remote Sensing (DCRS) has augmented its dual-frequency polarimetric synthetic aperture radar system (EMISAR) with single pass across-track interferometric (XTI) modes. This paper describes the system configuration, specifications and the operating modes. Analysis of data acq...

  10. Resonant tunneling diode oscillators for optical communications

    Science.gov (United States)

    Watson, Scott; Zhang, Weikang; Wang, Jue; Al-Khalidi, Abdullah; Cantu, Horacio; Figueiredo, Jose; Wasige, Edward; Kelly, Anthony E.

    2017-08-01

    The ability to use resonant tunneling diodes (RTDs) as both transmitters and receivers is an emerging topic, especially with regards to wireless communications. Successful data transmission has been achieved using electronic RTDs with carrier frequencies exceeding 0.3 THz. Specific optical-based RTDs, which act as photodetectors, have been developed by adjusting the device structure to include a light absorption layer and small optical windows on top of the device to allow direct optical access. This also allows the optical signal to directly modulate the RTD oscillation. Both types of RTD oscillators will allow for seamless integration of high frequency radio and optical fiber networks.

  11. Single Pass Albumin Dialysis in Hepatorenal Syndrome

    Directory of Open Access Journals (Sweden)

    Rahman Ebadur

    2008-01-01

    Full Text Available Hepatorenal syndrome (HRS is the most appalling complication of acute or chronic liver disease with 90% mortality rate. Single pass albumin dialysis (SPAD can be considered as a noble liver support technique in HRS. Here, we present a case of a young healthy patient who developed hyperacute fulminant liver failure that progressed to HRS. The patient was offered SPAD as a bridge to liver transplantation, however, it resulted in an excellent recovery.

  12. Highly efficient single-pass sum frequency generation by cascaded nonlinear crystals

    DEFF Research Database (Denmark)

    Hansen, Anders Kragh; Andersen, Peter E.; Jensen, Ole Bjarlin

    2015-01-01

    The cascading of nonlinear crystals has been established as a simple method to greatly increase the conversion efficiency of single-pass second-harmonic generation compared to a single-crystal scheme. Here, we show for the first time that the technique can be extended to sum frequency generation......, despite differences in the phase relations of the involved fields. An unprecedented 5.5 W of continuous-wave diffraction-limited green light is generated from the single-pass sum frequency mixing of two diode lasers in two periodically poled nonlinear crystals (conversion efficiency 50%). The technique...

  13. Linear diode laser bar optical stretchers for cell deformation

    Science.gov (United States)

    Sraj, Ihab; Marr, David W.M.; Eggleton, Charles D.

    2010-01-01

    To investigate the use of linear diode laser bars to optically stretch cells and measure their mechanical properties, we present numerical simulations using the immersed boundary method (IBM) coupled with classic ray optics. Cells are considered as three-dimensional (3D) spherical elastic capsules immersed in a fluid subjected to both optical and hydrodynamic forces in a periodic domain. We simulate cell deformation induced by both single and dual diode laser bar configurations and show that a single diode laser bar induces significant stretching but also induces cell translation of speed < 10 µm/sec for applied 6.6 mW/µm power in unconfined systems. The dual diode laser bar configuration, however, can be used to both stretch and optically trap cells at a fixed position. The net cell deformation was found to be a function of the total laser power and not the power distribution between single or dual diode laser bar configurations. PMID:21258483

  14. Axioms for behavioural congruence of single-pass instruction sequences

    NARCIS (Netherlands)

    Bergstra, J.A.; Middelburg, C.A.

    2017-01-01

    In program algebra, an algebraic theory of single-pass instruction sequences, three congruences on instruction sequences are paid attention to: instruction sequence congruence, structural congruence, and behavioural congruence. Sound and complete axiom systems for the first two congruences were

  15. Fiber optic modification of a diode array spectrophotometer

    International Nuclear Information System (INIS)

    Van Hare, D.R.; Prather, W.S.

    1986-01-01

    Fiber optics were adapted to a Hewlett-Packard diode array spectrophotometer to permit the analysis of radioactive samples without risking contamination of the instrument. Instrument performance was not compromised by the fiber optics. The instrument is in routine use at the Savannah River Plant control laboratories

  16. Single-frequency blue light generation by single-pass sum-frequency generation in a coupled ring cavity tapered laser

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Petersen, Paul Michael

    2013-01-01

    A generic approach for generation of tunable single frequency light is presented. 340 mW of near diffraction limited, single-frequency, and tunable blue light around 459 nm is generated by sum-frequency generation (SFG) between two tunable tapered diode lasers. One diode laser is operated in a ring...... cavity and another tapered diode laser is single-passed through a nonlinear crystal which is contained in the coupled ring cavity. Using this method, the single-pass conversion efficiency is more than 25%. In contrast to SFG in an external cavity, the system is entirely self-stabilized with no electronic...

  17. Integrated digital metamaterials enables ultra-compact optical diodes.

    Science.gov (United States)

    Shen, Bing; Polson, Randy; Menon, Rajesh

    2015-04-20

    We applied nonlinear optimization to design integrated digital metamaterials in silicon for unidirectional energy flow. Two devices, one for each polarization state, were designed, fabricated, and characterized. Both devices offer comparable or higher transmission efficiencies and extinction ratios, are easier to fabricate, exhibit larger bandwidths and are more tolerant to fabrication errors, when compared to alternatives. Furthermore, each device footprint is only 3μm × 3μm, which is the smallest optical diode ever reported. To illustrate the versatility of digital metamaterials, we also designed a polarization-independent optical diode.

  18. Single-Pass Clustering Algorithm Based on Storm

    Science.gov (United States)

    Fang, LI; Longlong, DAI; Zhiying, JIANG; Shunzi, LI

    2017-02-01

    The dramatically increasing volume of data makes the computational complexity of traditional clustering algorithm rise rapidly accordingly, which leads to the longer time. So as to improve the efficiency of the stream data clustering, a distributed real-time clustering algorithm (S-Single-Pass) based on the classic Single-Pass [1] algorithm and Storm [2] computation framework was designed in this paper. By employing this kind of method in the Topic Detection and Tracking (TDT) [3], the real-time performance of topic detection arises effectively. The proposed method splits the clustering process into two parts: one part is to form clusters for the multi-thread parallel clustering, the other part is to merge the generated clusters in the previous process and update the global clusters. Through the experimental results, the conclusion can be drawn that the proposed method have the nearly same clustering accuracy as the traditional Single-Pass algorithm and the clustering accuracy remains steady, computing rate increases linearly when increasing the number of cluster machines and nodes (processing threads).

  19. Dual-Wavelength Internal-Optically-Pumped Semiconductor Laser Diodes

    Science.gov (United States)

    Green, Benjamin

    Dual-wavelength laser sources have various existing and potential applications in wavelength division multiplexing, differential techniques in spectroscopy for chemical sensing, multiple-wavelength interferometry, terahertz-wave generation, microelectromechanical systems, and microfluidic lab-on-chip systems. In the drive for ever smaller and increasingly mobile electronic devices, dual-wavelength coherent light output from a single semiconductor laser diode would enable further advances and deployment of these technologies. The output of conventional laser diodes is however limited to a single wavelength band with a few subsequent lasing modes depending on the device design. This thesis investigates a novel semiconductor laser device design with a single cavity waveguide capable of dual-wavelength laser output with large spectral separation. The novel dual-wavelength semiconductor laser diode uses two shorter- and longer-wavelength active regions that have separate electron and hole quasi-Fermi energy levels and carrier distributions. The shorter-wavelength active region is based on electrical injection as in conventional laser diodes, and the longer-wavelength active region is then pumped optically by the internal optical field of the shorter-wavelength laser mode, resulting in stable dual-wavelength laser emission at two different wavelengths quite far apart. Different designs of the device are studied using a theoretical model developed in this work to describe the internal optical pumping scheme. The carrier transport and separation of the quasi-Fermi distributions are then modeled using a software package that solves Poisson's equation and the continuity equations to simulate semiconductor devices. Three different designs are grown using molecular beam epitaxy, and broad-area-contact laser diodes are processed using conventional methods. The modeling and experimental results of the first generation design indicate that the optical confinement factor of the

  20. NOTE: A dynamic optical imaging phantom based on an array of semiconductor diodes

    Science.gov (United States)

    Hebden, Jeremy C.; Correia, Teresa; Khakoo, Imran; Gibson, Adam P.; Everdell, N. L.

    2008-11-01

    An electrically-activated phantom for evaluating diffuse optical imaging systems has been designed based on an array of semiconductor diodes which are used to heat a thermochromic dye embedded in a solidified polyester resin with tissue-like optical properties. The array allows individual diodes to be addressed sequentially, thus simulating the movement of a small volume of contrasting optical absorption. Two designs of diode-array phantom are described and results of imaging experiments are presented.

  1. A dynamic optical imaging phantom based on an array of semiconductor diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hebden, Jeremy C; Correia, Teresa; Khakoo, Imran; Gibson, Adam P; Everdell, N L [Department of Medical Physics and Bioengineering, University College London, Gower Street, London WC1E 6BT (United Kingdom)

    2008-11-07

    An electrically-activated phantom for evaluating diffuse optical imaging systems has been designed based on an array of semiconductor diodes which are used to heat a thermochromic dye embedded in a solidified polyester resin with tissue-like optical properties. The array allows individual diodes to be addressed sequentially, thus simulating the movement of a small volume of contrasting optical absorption. Two designs of diode-array phantom are described and results of imaging experiments are presented. (note)

  2. Milestone experiments for single pass UV/X-ray FELs

    International Nuclear Information System (INIS)

    Ben-Zvi, I.

    1994-01-01

    In the past decade, significant advances have been made in the theory and technology of high brightness electron beams and single pass FELS. These developments facilitate the construction of practical UV and X-ray FELs and has prompted proposals to the DOE for the construction of such facilities. There are several important experiments to be performed before committing to the construction of dedicated user facilities. Two experiments are under construction in the IR, the UCLA Self Amplified Spontaneous Emission experiment and the BNL laser seeded Harmonic Generation experiment. A multi-institution collaboration is being organized about a 210 MeV electron linac available at BNL and the 10 meter tong NISUS wiggler. This experiment will be done in the UV and will test various experimental aspects of electron beam dynamics, FEL exponential regime with gain guiding, start up from noise, seeding and harmonic generation. These experiments will advance the state of FEL research and lead towards future dedicated users' facilities

  3. Optical vortex generation from a diode-pumped alexandrite laser

    Science.gov (United States)

    Thomas, G. M.; Minassian, A.; Damzen, M. J.

    2018-04-01

    We present the demonstration of an optical vortex mode directly generated from a diode-pumped alexandrite slab laser, operating in the bounce geometry. This is the first demonstration of an optical vortex mode generated from an alexandrite laser or from any other vibronic laser. An output power of 2 W for a vortex mode with a ‘topological charge’ of 1 was achieved and the laser was made to oscillate with both left- and right-handed vorticity. The laser operated at two distinct wavelengths simultaneously, 755 and 759 nm, due to birefringent filtering in the alexandrite gain medium. The result offers the prospect of broadly wavelength tunable vortex generation directly from a laser.

  4. Optical signal inverter of erbium-doped yttrium aluminum garnet with red shift of laser diodes.

    Science.gov (United States)

    Maeda, Y

    1994-08-10

    An optical signal inverter was demonstrated in a simple structure that combined a laser diode with Er-doped YAG crystal. The optical signal inversion occurred at a response time of 7 ns and was caused by the decrease of transmission of Er:YAG against the red shift of the wavelength of the laser diode.

  5. QUANTITATIVE DETECTION OF ENVIRONMENTALLY IMPORTANT DYES USING DIODE LASER/FIBER-OPTIC RAMAN

    Science.gov (United States)

    A compact diode laser/fiber-optic Raman spectrometer is used for quantitative detection of environmentally important dyes. This system is based on diode laser excitation at 782 mm, fiber optic probe technology, an imaging spectrometer, and state-of-the-art scientific CCD camera. ...

  6. Milestone experiments for single pass UV/X-ray FELs

    Science.gov (United States)

    Ben-Zvi, Ilan

    1995-04-01

    In the past decade, significant advances have been made in the theory and technology of high brightness electron beams and single pass FELs. These developments facilitate the construction of practical UV and X-ray FELs and has prompted proposals to the DOE for the construction of such facilities. There are several important experiments to be performed before committing to the construction of dedicated user facilities. Two experiments are under construction in the IR, the UCLA self-amplified spontaneous emission experiment and the BNL laser seeded harmonic generation experiment. A multi-institution collaboration is being organized about a 210 MeV electron linac available at BNL and the 10 m long NISUS wiggler. This experiment will be done in the UV and will test various experimental aspects of electron beam dynamics, FEL exponential regime with gain guiding, start-up from noise, seeding and harmonic generation. These experiments will advance the state of FEL research and lead towards future dedicated users' facilities.

  7. Optical leak detection of oxygen using IR-laser diodes

    Science.gov (United States)

    Disimile, P. J.; Fox, C.; Toy, N.

    1991-01-01

    The ability to accurately measure the concentration of gaseous oxygen and its corresponding flow rate is becoming of greater importance. The technique being presented is based on the principal of light attenuation due to the absorption of radiation by the A-band of oxygen which is located in the 759-770 nm wavelength range. With an ability to measure the change in the light transmission to 0.05 percent, a sensitive optical leak detection system which has a rapid time response is possible. In this research program, the application of laser diode technology and its ability to be temperature tuned to a selected oxygen absorption spectral peak has allowed oxygen concentrations as low as 16,000 ppm to be detected.

  8. Programmable current source for diode lasers stabilized optical fiber

    International Nuclear Information System (INIS)

    Gomez, J.; Camas, J.; Garcia, L.

    2012-01-01

    In this paper, we present the electronic design of a programmable stabilized current source. User can access to the source through a password, which, it has a database with the current and voltage operating points. This source was successfully used as current source in laser diode in optical fiber sensors. Variations in the laser current were carried out by a monitoring system and a control of the Direct Current (DC), which flowing through a How land source with amplifier. The laser current can be stabilized with an error percent of ± 1 μA from the threshold current (Ith) to its maximum operation current (Imax) in DC mode. The proposed design is reliable, cheap, and its output signal of stabilized current has high quality. (Author)

  9. The Single Pass RF Driver: Final beam compression

    International Nuclear Information System (INIS)

    Burke, Robert

    2014-01-01

    The Single Pass RF Driver (SPRFD) compacts the beam from the linac without storage rings by manipulations that take advantage of the multiplicity of isotopes (16), the preserved µbunch structure, and increased total linac current. Magnetic switches on a first set of delay lines rearrange the internal structure of the various isotopic beams. A second set of delay lines sets the relative timing of the 16 isotopic beam sections so they will telescope at the pellet, in one of multiple fusion chambers, e.g. 10. Shortening each isotopic beam section uses preservation of the µbunch structure up to the final ∼2 km drift before final focus. Just before the final drift, differential acceleration of the µbunches in each isotopic beam section (128 total) launches an axial collapse, referred to as the “Slick”. The µbunches interpenetrate as their centers of mass move toward each other and individual µbunches lengthen due to their momentum spread. In longitudinal phase space they slide over one another as they lengthen in time and slim down in instantaneous energy spread. The permissible amount of µbunch lengthening is set by the design pulse shape at the pellet, which varies for different groups of isotopes. In narrow bands of ranges according to the role for each isotope group in the pellet, the ranges extend from 1 to 10 g/cm 2 to drive the cylinder barrel and thin hemispherical end caps, to heat the ∼0.5 g/cm 2 ρR fast ignition zone, and to improve the quasi-sphericity of the compression of the fast ignition zones at the pellet's ends. Because the µbunch–µbunch momentum differences are correlated, time-ramped beamline transport elements close after the differential accelerator are used to correct the associated shifts of focal point. Beam neutralization is needed after the differential acceleration until adjacent bunches begin to overlap. Concurrent collapse of each isotope and telescoping of the 16 isotopes cause the current in each beamline to rise

  10. Optical bistability in erbium-doped yttrium aluminum garnet crystal combined with a laser diode.

    Science.gov (United States)

    Maeda, Y

    1994-01-10

    Optical bistability was observed in a simple structure of an injection laser diode combined with an erbium-doped yttrium aluminum garnet crystal. Since a hysteresis characteristic exists in the relationship between the wavelength and the injection current of a laser diode, an optical memory function capable of holding the output status is confirmed. In addition, an optical signal inversion was caused by the decrease of transmission of the erbium-doped yttrium aluminum garnet crystal against the red shift (principally mode hopping) of the laser diode. It is suggested that the switching time of this phenomenon is the time necessary for a mode hopping by current injection.

  11. Communication with diode laser: short distance line of sight communication using fiber optics

    International Nuclear Information System (INIS)

    Mirza, A.H.

    1999-01-01

    The objective of this project is to carry audio signal from transmitting station to a short distance receiving station along line of sight and also communication through fiber optics is performed, using diode laser light as carrier. In this project optical communication system, modulation techniques, basics of laser and causes of using diode laser are discussed briefly. Transmitter circuit and receiver circuit are fully described. Communication was performed using pulse width modulation technique. Optical fiber communication have many advantages over other type of conventional communication techniques. This report contains the description of optical fiber communication and compared with other communication systems. (author)

  12. All-Optical flip-flop operation using a SOA and DFB laser diode optical feedback combination

    DEFF Research Database (Denmark)

    D'Oosterlinck, W.; Öhman, Filip; Buron, Jakob Due

    2007-01-01

    We report on the switching of an all-optical flip-flop consisting of a semiconductor optical amplifier (SOA) and a distributed feedback laser diode (DFB), bidirectionally coupled to each other. Both simulation and experimental results are presented. Switching times as low as 50ps, minimal required...

  13. Noise effects in an optical heterodyne spectrometer using tunable diode lasers

    Science.gov (United States)

    Katzberg, S. J.; Kowitz, H. R.; Rowland, C. W.

    1981-01-01

    A comparison of measured and predicted signal-to-noise ratio is made in an optical heterodyne spectrometer utilizing a tunable diode laser which exhibited excess noise. It is shown that good agreement between predicted and measured signal-to-noise ratios results if excess noise effects due to tunable diode lasers are included in the predictions. The methods used to quantify excess noise and to incorporate their effects into predictions of signal-to-noise ratio are discussed.

  14. Model for Estimation of Thermal History Produced by a Single Pass Underwater Wet Weld

    National Research Council Canada - National Science Library

    Dill, Jay

    1997-01-01

    Thermal history calculations for single pass underwater wet weldments were made by solving the appropriate beat transfer equations using the three-dimensional Crank-Nicholson finite difference method...

  15. Bistable optical devices with laser diodes coupled to absorbers of narrow spectral bandwidth.

    Science.gov (United States)

    Maeda, Y

    1994-06-20

    An optical signal inverter was demonstrated with a combination of the following two effects: One is the decrease of the transmission of an Er-doped YAG crystal with increasing red shift of a laser diode resulting from an increase in the injection current, and the other is a negative nonlinear absorption in which the transmission decreases inversely with increasing laser intensity. Because a hysteresis characteristic exists in the relationship between the wavelength and the injection current of the laser diode, an optical bistability was observed in this system.

  16. A comprehensive model of catastrophic optical-damage in broad-area laser diodes

    Science.gov (United States)

    Chin, A. K.; Bertaska, R. K.; Jaspan, M. A.; Flusberg, A. M.; Swartz, S. D.; Knapczyk, M. T.; Petr, R.; Smilanski, I.; Jacob, J. H.

    2009-02-01

    The present model of formation and propagation of catastrophic optical-damage (COD), a random failure-mode in laser diodes, was formulated in 1974 and has remained substantially unchanged. We extend the model of COD phenomena, based on analytical studies involving EBIC (electron-beam induced current), STEM (scanning transmission-electron microscopy) and sophisticated optical-measurements. We have determined that a ring-cavity mode, whose presence has not been previously reported, significantly contributes to COD initiation and propagation in broad-area laser-diodes.

  17. Optical diagnosis system for intense electron beam diode plasma

    International Nuclear Information System (INIS)

    Yang Jie; Shu Ting; Zhang Jun; Fan Yuwei; Yang Jianhua; Liu Lie; Yin Yi; Luo Ling

    2012-01-01

    A nanosecond time-resolved imaging platform for diode plasmas diagnostics has been constructed based on the pulsed electron beam accelerator and high speed framing camera (HSFC). The accelerator can provide an electrical pulse with voltages of 200-500 kV, rise-time (from 10% to 90% amplitude) of 25 ns and duration of 110 ns. The diode currents up to kA level can be extracted. The trigger signal for camera was picked up by a water-resistor voltage divider after the main switch of the accelerator, which could avoid the disadvantageous influence of the time jitter caused by the breakdown of the gas gaps. Then the sampled negative electrical pulse was converted into a transistor-transistor logic (TTL) signal (5 V) with rise time of about 1.5 ns and time jitter less than 1 ns via a processor. And this signal was taken as the synchronization time base. According to the working characteristics of the camera, the synchronization scheme relying mainly on electrical pulse delay method supplemented by light signal delay method was determined to make sure that the camera can work synchronously with the light production and transportation from the diode plasma within the time scale of nanosecond. Moreover, shielding and filtering methods were used to restrain the interference on the measurement system from the accelerator. Finally, time resolved 2-D framing images of the diode plasma were acquired. (authors)

  18. High contrast all-optical diode based on direction-dependent optical bistability within asymmetric ring cavity

    Science.gov (United States)

    Xia, Xiu-Wen; Zhang, Xin-Qin; Xu, Jing-Ping; Yang, Ya-Ping

    2016-08-01

    We propose a simple all-optical diode which is comprised of an asymmetric ring cavity containing a two-level atomic ensemble. Attributed to spatial symmetry breaking of the ring cavity, direction-dependent optical bistability is obtained in a classical bistable system. Therefore, a giant optical non-reciprocity is generated, which guarantees an all-optical diode with a high contrast up to 22 dB. Furthermore, its application as an all-optical logic AND gate is also discussed. Project supported by the National Natural Science Foundation of China (Grant Nos. 11274242, 11474221, and 11574229), the Joint Fund of the National Natural Science Foundation of China and the China Academy of Engineering Physics (Grant No. U1330203), and the National Key Basic Research Special Foundation of China (Grant Nos. 2011CB922203 and 2013CB632701).

  19. The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application

    Energy Technology Data Exchange (ETDEWEB)

    Özaydın, C. [Batman University, Engineering Faculty, Department of Computer Eng., Batman (Turkey); Güllü, Ö., E-mail: omergullu@gmail.com [Batman University, Science and Art Faculty, Department of Physics, Batman (Turkey); Pakma, O. [Batman University, Science and Art Faculty, Department of Physics, Batman (Turkey); Ilhan, S. [Siirt University, Science and Art Faculty, Department of Chemistry, Siirt (Turkey); Akkılıç, K. [Dicle University, Education Faculty, Department of Physics Education, Diyarbakır (Turkey)

    2016-05-15

    Highlights: • Optical properties and thickness of the A novel organometallic complex (OMC) film were investigated by spectroscopic ellipsometry (SE). • Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated • This paper presents the I–V analysis of Au/OMC/n-Si MIS diode. • Current–voltage and photovoltaic properties of the diode were investigated. - Abstract: In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current–voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φ{sub b}) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.

  20. The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application

    International Nuclear Information System (INIS)

    Özaydın, C.; Güllü, Ö.; Pakma, O.; Ilhan, S.; Akkılıç, K.

    2016-01-01

    Highlights: • Optical properties and thickness of the A novel organometallic complex (OMC) film were investigated by spectroscopic ellipsometry (SE). • Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated • This paper presents the I–V analysis of Au/OMC/n-Si MIS diode. • Current–voltage and photovoltaic properties of the diode were investigated. - Abstract: In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current–voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φ b ) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.

  1. All-optical NRZ-to-RZ data format conversion with optically injected laser diode or semiconductor optical amplifier

    Science.gov (United States)

    Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh

    2006-09-01

    By injecting the optical NRZ data into a Fabry-Perot laser diode (FPLD) synchronously modulated at below threshold condition or a semiconductor optical amplifier (SOA) gain-depleted with a backward injected clock stream, the all-optical non-return to zero (NRZ) to return-to-zero (RZ) format conversion of a STM-64 date-stream for synchronous digital hierarchy (SDH) or an OC-192 data stream for synchronous optical network (SONET) in high-speed fiber-optic communication link can be performed. Without the assistance of any complicated RF electronic circuitry, the output RZ data-stream at bit rate of up to 10 Gbit/s is successfully transformed in the optically NRZ injection-locked FPLD, in which the incoming NRZ data induces gain-switching of the FPLD without DC driving current or at below threshold condition. A power penalty of 1.2 dB is measured after NRZ-to-RZ transformation in the FPLD. Alternatively, the all-optical 10Gbits/s NRZ-to-RZ format conversion can also be demonstrated in a semiconductor optical amplifier under a backward dark-optical-comb injection with its duty-cycle 70%, which is obtained by reshaping from the received data clock at 10 GHz. The incoming optical NRZ data-stream is transformed into a pulsed RZ data-stream with its duty-cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. In contrast to the FPLD, the SOA based NRZ-to-RZ converter exhibits an enhanced extinction ratio from 7 to 13 dB, and BER of 10 -13 at -18.5 dBm. In particular, the power penalty of the received RZ data-stream has greatly improved by 5 dB as compared to that obtained from FPLD.

  2. High gain semiconductor optical amplifier — Laser diode at visible wavelength

    KAUST Repository

    Shen, Chao

    2017-02-07

    We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

  3. The impact of external optical feedback on the degradation behavior of high-power diode lasers

    DEFF Research Database (Denmark)

    Hempel, Martin; Chi, Mingjun; Petersen, Paul Michael

    2013-01-01

    The impact of external feedback on high-power diode laser degradation is studied. For this purpose early stages of gradual degradation are prepared by accelerated aging of 808-nm-emitting AlGaAs-based devices. While the quantum well that actually experiences the highest total optical load remains...

  4. Effect of optical illumination on DDR IMPATT diode at 36 GHz

    Science.gov (United States)

    Banerjee, Atanu; Mitra, M.

    2017-11-01

    A reverse biased p–n junction diode with proper resonant cavity and boundary conditions is able to generate rf power and shows normal DC and small signal properties designed with semiconductor materials like 4H-SiC, GaAs, InP, Si-based DDR IMPATT structure at Ka band with dark condition. But when it is exposed to optical illumination through a proper optical window for both top mounted (TM) and flip chip (FC) configuration, it shows the influence on the oscillator performances in that band of frequency. The simulated results are analyzed for 36 GHz window frequency in each of the diodes and relative differences are found in power output and frequency of all these diodes with variable intensities of illumination. Finally it is found that optical control has immense effect in both FC and TM mode regarding the reduction of output power and shifting of operating frequency from which optimization is done for the best optically sensitive material for IMPATT diode.

  5. Optical Experiments Using Mini-Torches with Red, Green and Blue Light Emitting Diodes

    Science.gov (United States)

    Kamata, Masahiro; Matsunaga, Ai

    2007-01-01

    We have developed two kinds of optical experiments: color mixture and fluorescence, using mini-torches with light emitting diodes (LEDs) that emit three primary colors. Since the tools used in the experiments are simple and inexpensive, students can easily retry and develop the experiments by themselves. As well as giving an introduction to basic…

  6. Degradation Processes in High-Power Diode Lasers under External Optical Feedback

    DEFF Research Database (Denmark)

    Tomm, Jens. W.; Hempel, Martin; Petersen, Paul Michael

    2013-01-01

    The effect of moderate external feedback on the gradual degradation of 808 nm emitting AlGaAs-based high-power broad-area diode lasers is analyzed. Eventually the quantum well that actually experiences the highest total optical load remains unaffected by the aging, while severe impact...

  7. All-Optical Flip-Flop Based on an SOA/DFB-Laser Diode Optical Feedback Scheme

    DEFF Research Database (Denmark)

    D'Oosterlinck, W.; Buron, Jakob Due; Öhman, Filip

    2007-01-01

    We report on the dynamic all-optical flip-flop (AOFF) operation of an optical feedback scheme consisting of a semiconductor optical amplifier (SOA) and a distributed feedback laser diode (DFB-LD), bidirectionally coupled to each other. The operation of the AOFF relies on the interplay between...... the optical powers in both the DFB-LD and the SOA. Switching times as low as 150ps for switch pulse energies of around 6 pJ and a repetition rate of 500MHz have been measured. The contrast ratio was measured to be above 12 dB....

  8. Optical pumping of Rb by Ti:Sa laser and high-power laser diode

    Czech Academy of Sciences Publication Activity Database

    Buchta, Zdeněk; Rychnovský, Jan; Lazar, Josef

    2006-01-01

    Roč. 8, č. 1 (2006), s. 350-354 ISSN 1454-4164 R&D Projects: GA AV ČR IAA1065303; GA ČR GA102/04/2109 Institutional research plan: CEZ:AV0Z20650511 Keywords : optical pumping * Ti:Sa laser * laser diode * emission linewidth * spectroscopy * laser frequency stabilization Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.106, year: 2006

  9. Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2012-01-01

    A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser....... However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy....

  10. Fuel-element failures in Hanford single-pass reactors 1944--1971

    Energy Technology Data Exchange (ETDEWEB)

    Gydesen, S.P.

    1993-07-01

    The primary objective of the Hanford Environmental Dose Reconstruction (HEDR) Project is to estimate the radiation dose that individuals could have received as a result of emissions since 1944 from the US Department of Energy`s (DOE) Hanford Site near Richland, Washington. To estimate the doses, the staff of the Source Terms Task use operating information from historical documents to approximate the radioactive emissions. One source of radioactive emissions to the Columbia River came from leaks in the aluminum cladding of the uranium metal fuel elements in single-pass reactors. The purpose of this letter report is to provide photocopies of the documents that recorded these failures. The data from these documents will be used by the Source Terms Task to determine the contribution of single-pass reactor fuel-element failures to the radioactivity of the reactor effluent from 1944 through 1971. Each referenced fuel-element failure occurring in the Hanford single-pass reactors is addressed. The first recorded failure was in 1948, the last in 1970. No records of fuel-element failures were found in documents prior to 1948. Data on the approximately 2000 failures which occurred during the 28 years (1944--1971) of Hanford single-pass reactor operations are provided in this report.

  11. Fuel-element failures in Hanford single-pass reactors 1944--1971

    International Nuclear Information System (INIS)

    Gydesen, S.P.

    1993-07-01

    The primary objective of the Hanford Environmental Dose Reconstruction (HEDR) Project is to estimate the radiation dose that individuals could have received as a result of emissions since 1944 from the US Department of Energy's (DOE) Hanford Site near Richland, Washington. To estimate the doses, the staff of the Source Terms Task use operating information from historical documents to approximate the radioactive emissions. One source of radioactive emissions to the Columbia River came from leaks in the aluminum cladding of the uranium metal fuel elements in single-pass reactors. The purpose of this letter report is to provide photocopies of the documents that recorded these failures. The data from these documents will be used by the Source Terms Task to determine the contribution of single-pass reactor fuel-element failures to the radioactivity of the reactor effluent from 1944 through 1971. Each referenced fuel-element failure occurring in the Hanford single-pass reactors is addressed. The first recorded failure was in 1948, the last in 1970. No records of fuel-element failures were found in documents prior to 1948. Data on the approximately 2000 failures which occurred during the 28 years (1944--1971) of Hanford single-pass reactor operations are provided in this report

  12. Improved contrast polymer light-emitting diode with optical interference layers

    International Nuclear Information System (INIS)

    Liu, H.Y.; Sun, R.G.; Yang, K.X.; Peng, J.B.; Cao, Y.; Joo, S.K.

    2007-01-01

    An improved contrast polymer light diode based on the destructive optical interference layers deposited between the glass substrate and ITO anode is fabricated. It is unnecessary to be considered that the additional optical interference structure will impede carrier injection from the electrode to the carrier-transporting layer. Due to the quarter-wavelength thickness of medial ITO layer, the reflected light from first Cr layer is inverted 180 o out of phase with the reflected light from second Cr layer, resulting in the destructive interference. It is evident that the contrast ratio of the device with the optical interference structure is about three times higher than that of the conventional device

  13. Cell deformation cytometry using diode-bar optical stretchers

    Science.gov (United States)

    Sraj, Ihab; Eggleton, Charles D.; Jimenez, Ralph; Hoover, Erich; Squier, Jeff; Chichester, Justin; Marr, David W.M.

    2010-01-01

    The measurement of cell elastic parameters using optical forces has great potential as a reagent-free method for cell classification, identification of phenotype, and detection of disease; however, the low throughput associated with the sequential isolation and probing of individual cells has significantly limited its utility and application. We demonstrate a single-beam, high-throughput method where optical forces are applied anisotropically to stretch swollen erythrocytes in microfluidic flow. We also present numerical simulations of model spherical elastic cells subjected to optical forces and show that dual, opposing optical traps are not required and that even a single linear trap can induce cell stretching, greatly simplifying experimental implementation. Last, we demonstrate how the elastic modulus of the cell can be determined from experimental measurements of the equilibrium deformation. This new optical approach has the potential to be readily integrated with other cytometric technologies and, with the capability of measuring cell populations, enabling true mechanical-property-based cell cytometry. PMID:20799841

  14. Ultra-Fast All-Optical Self-Aware Protection Switching Based on a Bistable Laser Diode

    DEFF Research Database (Denmark)

    An, Yi; Vukovic, Dragana; Lorences Riesgo, Abel

    2014-01-01

    We propose a novel concept of all-optical protection switching with link failure automatic awareness based on AOWFF. The scheme is experimentally demonstrated using a single MG-Y laser diode with a record switching time ~200 ps....

  15. THE DETERMINATION OF A CRITICAL VALUE FOR DYNAMIC STABILITY OF SEMICONDUCTOR LASER DIODE WITH EXTERNAL OPTICAL FEEDBACK

    Directory of Open Access Journals (Sweden)

    Remzi YILDIRIM

    1998-01-01

    Full Text Available In this study, dynamic stability analysis of semiconductor laser diodes with external optical feedback has been realized. In the analysis the frequency response of the transfer function of laser diode H jw( , the transfer m function of laser diode with external optical feedback TF jw( , and optical feedback transfer function m K jw( obtained from small signal equations has been m accomplished using Nyquist stability analysis in complex domain. The effect of optical feedback on the stability of the system has been introduced and to bring the laser diode to stable condition the working critical boundary range of dampig frequency and reflection power constant (R has been determined. In the study the reflection power has been taken as ( .

  16. Fast all-optical flip-flop based on a single distributed feedback laser diode.

    Science.gov (United States)

    Huybrechts, Koen; Morthier, Geert; Baets, Roel

    2008-07-21

    Since there is an increasing demand for fast networks and switches, the electronic data processing imposes a severe bottleneck and all-optical processing techniques will be required in the future. All-optical flip-flops are one of the key components because they can act as temporary memory elements. Several designs have already been demonstrated but they are often relatively slow or complex to fabricate. We demonstrate experimentally fast flip-flop operation in a single DFB laser diode which is one of the standard elements in today's telecommunication industry. Injecting continuous wave light in the laser diode, a bistability is obtained due to the spatial hole burning effect. We can switch between the two states by using pulses with energies below 200 fJ resulting in flip-flop operation with switching times below 75 ps and repetition rates of up to 2 GHz.

  17. Invariable optical properties of phosphor-free white light-emitting diode under electrical stress

    International Nuclear Information System (INIS)

    Hao, Long; Hao, Fang; Sheng-Li, Qi; Li-Wen, Sang; Wen-Yu, Cao; Jian, Yan; Jun-Jing, Deng; Zhi-Jian, Yang; Guo-Yi, Zhang

    2010-01-01

    This paper reports that a dual-wavelength white light-emitting diode is fabricated by using a metal-organic chemical vapor deposition method. Through a 200-hours' current stress, the reverse leakage current of this light-emitting diode increases with the aging time, but the optical properties remained unchanged despite the enhanced reverse leakage current. Transmission electron microscopy and cathodeluminescence images show that indium atoms were assembled in and around V-shape pits with various compositions, which can be ascribed to the emitted white light. Evolution of cathodeluminescence intensities under electron irradiation is also performed. Combining cathodeluminescence intensities under electron irradiation and above results, the increase of leakage channels and crystalline quality degradation are realized. Although leakage channels increase with aging, potential fluctuation caused by indium aggregation can effectively avoid the impact of leakage channels. Indium aggregation can be attributed to the mechanism of preventing optical degradation in phosphor-free white light-emitting diode. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  18. Optical sectioning microscopes with no moving parts using a micro-stripe array light emitting diode.

    Science.gov (United States)

    Poher, V; Zhang, H X; Kennedy, G T; Griffin, C; Oddos, S; Gu, E; Elson, D S; Girkin, M; French, P M W; Dawson, M D; Neil, M A

    2007-09-03

    We describe an optical sectioning microscopy system with no moving parts based on a micro-structured stripe-array light emitting diode (LED). By projecting arbitrary line or grid patterns onto the object, we are able to implement a variety of optical sectioning microscopy techniques such as grid-projection structured illumination and line scanning confocal microscopy, switching from one imaging technique to another without modifying the microscope setup. The micro-structured LED and driver are detailed and depth discrimination capabilities are measured and calculated.

  19. Electrical and Optical Gain Lever Effects in InGaAs Double Quantum Well Diode Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Pocha, M D; Goddard, L L; Bond, T C; Nikolic, R J; Vernon, S P; Kallman, J S; Behymer, E M

    2007-01-03

    In multisection laser diodes, the amplitude or frequency modulation (AM or FM) efficiency can be improved using the gain lever effect. To study gain lever, InGaAs double quantum well (DQW) edge emitting lasers have been fabricated with integrated passive waveguides and dual sections providing a range of split ratios from 1:1 to 9:1. Both the electrical and the optical gain lever have been examined. An electrical gain lever with greater than 7 dB enhancement of AM efficiency was achieved within the range of appropriate DC biasing currents, but this gain dropped rapidly outside this range. We observed a 4 dB gain in the optical AM efficiency under non-ideal biasing conditions. This value agreed with the measured gain for the electrical AM efficiency under similar conditions. We also examined the gain lever effect under large signal modulation for digital logic switching applications. To get a useful gain lever for optical gain quenched logic, a long control section is needed to preserve the gain lever strength and a long interaction length between the input optical signal and the lasing field of the diode must be provided. The gain lever parameter space has been fully characterized and validated against numerical simulations of a semi-3D hybrid beam propagation method (BPM) model for the coupled electron-photon rate equation. We find that the optical gain lever can be treated using the electrical injection model, once the absorption in the sample is known.

  20. Optimization design of integrated reflective optics for white light-emitting diodes

    Science.gov (United States)

    Chen, Enguo; Wu, Rengmao

    2014-07-01

    White light-emitting diodes are gradually dominating the illumination markets that new design challenges arise for this emerging source. Based on the white LEDs, an efficient optimization method is presented for integrated reflective optics. During the design process, initial structure of reflective optics is numerically calculated. For further optimization, initial parameters are adjusted by section-modeling method to determine optimal starting point. To complete the design, subsequent spline-modeling method is applied. Design example show that the designed reflective optics for LED illumination could offer both high performance and low space occupancy rate. Comparing to the numerical method, the method offers a 15% uniformity improvement and 6-times rise of processing efficiency. It is believed that the effective optimization method will has practical applications in other integrated optics.

  1. High-aspect-ratio grooves fabricated in silicon by a single pass of femtosecond laser pulses

    International Nuclear Information System (INIS)

    Ma Yuncan; Shi Haitao; Si Jinhai; Ren Hai; Chen Tao; Chen Feng; Hou Xun

    2012-01-01

    High-aspect-ratio grooves have been fabricated in silicon by a single pass of femtosecond laser pulses in water and ambient air. Scanning electron microscopy and energy dispersive x-ray spectroscopy were employed to image for the morphology of the photoinduced grooves and analyze the chemical composition in the surrounding of the grooves. It was observed that the sidewall of the grooves fabricated in water was much smoother than that in ambient air, and there were homogeneous nano-scale protrusions on the sidewall of the grooves fabricated in water. Meanwhile, oxygen species, which was incorporated into the grooves fabricated in air, was not observed in those in water.

  2. Catastrophic optical mirror damage in diode lasers monitored during single-pulse operation

    DEFF Research Database (Denmark)

    Zegler, M.; Tomm, J.W.; Reeber, D.

    2009-01-01

    Catastrophic optical mirror damage (COMD) is analyzed for 808 nm emitting diode lasers in single-pulse operation in order to separate facet degradation from subsequent degradation processes. During each pulse, nearfield and thermal images are monitored. A temporal resolution better than 7 µs...... is achieved. The thermal runaway process is unambiguously related to the occurrence of a “thermal flash.” A one-by-one correlation between nearfield, thermal flash, thermal runaway, and structural damage is observed. The single-pulse excitation technique allows for controlling the propagation...

  3. Generic, network schema agnostic sparse tensor factorization for single-pass clustering of heterogeneous information networks.

    Directory of Open Access Journals (Sweden)

    Jibing Wu

    Full Text Available Heterogeneous information networks (e.g. bibliographic networks and social media networks that consist of multiple interconnected objects are ubiquitous. Clustering analysis is an effective method to understand the semantic information and interpretable structure of the heterogeneous information networks, and it has attracted the attention of many researchers in recent years. However, most studies assume that heterogeneous information networks usually follow some simple schemas, such as bi-typed networks or star network schema, and they can only cluster one type of object in the network each time. In this paper, a novel clustering framework is proposed based on sparse tensor factorization for heterogeneous information networks, which can cluster multiple types of objects simultaneously in a single pass without any network schema information. The types of objects and the relations between them in the heterogeneous information networks are modeled as a sparse tensor. The clustering issue is modeled as an optimization problem, which is similar to the well-known Tucker decomposition. Then, an Alternating Least Squares (ALS algorithm and a feasible initialization method are proposed to solve the optimization problem. Based on the tensor factorization, we simultaneously partition different types of objects into different clusters. The experimental results on both synthetic and real-world datasets have demonstrated that our proposed clustering framework, STFClus, can model heterogeneous information networks efficiently and can outperform state-of-the-art clustering algorithms as a generally applicable single-pass clustering method for heterogeneous network which is network schema agnostic.

  4. Ultra-high optical responsivity of semiconducting asymmetric nano-channel diodes for photon detection

    Science.gov (United States)

    Akbas, Y.; Plecenik, T.; Durina, P.; Plecenik, A.; Jukna, A.; Wicks, G.; Sobolewski, Roman

    2017-05-01

    The asymmetric nano-channel diode (ANCD) is the 2-dimensional electron gas (2DEG) semiconductor nanodevice that, unlike a conventional diode, relies on the device nanostructure and field-controlled transport in a ballistic nanometerwidth channel instead of barriers to develop its asymmetric, diode-like current-voltage (I-V) characteristics. We focus on ANCD optoelectronic properties, and demonstrate that the devices can act as very sensitive, single-photon-level, visiblelight photodetectors. Our test structures consist of 2-μm-long and 230-nm-wide channels and were fabricated using electron-beam lithography on a GaAs/AlGaAs heterostructure with a 2DEG layer, followed by reactive ion etching. The I-V curves were collected by measuring the transport current under the voltage-source biasing condition, both in the dark and under light illumination. The experiments were conducted inside a cryostat, in a temperature range from 300 K to 78 K. As an optical excitation, we used a 800-nm-wavelength, generated by a commercial Ti:sapphire laser operated either at a quasi-continuous-wave mode or as a source of 100-fs-wide pulses. The impact of the light illumination was very clear, and at low temperatures we observed a significant photocurrent Iph 0.25 μA at temperature 78 K for the incident optical power as low as 1 nW, with a limited dark-current background. The magnitude of the device optical responsivity increased linearly with the decrease of the optical power, reaching for 1-nW optical excitation the value as high as 400 A/W at room temperature and >800 A/W at 78K. The physics of the photoresponse gain mechanism in the ANCD arises from a vast disparity between the sub-picosecond transit time of photo-excited electrons travelling in the 2DEG nanochannel and the up to microsecond lifetime of photo-excited holes pushed towards the device substrate.

  5. Blue light emitting diodes for optical stimulation of quartz in retrospective dosimetry and dating

    DEFF Research Database (Denmark)

    Bøtter-Jensen, L.; Duller, G.A.T.; Murray, A.S.

    1999-01-01

    Recently developed blue light emitting diodes (LEDs) for the optical stimulation of quartz for use in routine optically stimulated luminescence (OSL) dating and retrospective dosimetry have been tested. For similar power densities, it was found that the higher energy light provided by the blue LEDs...... (470 nm) gives order of magnitude greater rate of stimulation in quartz than that from conventional blue-green light filtered from a halogen lamp. A practical blue LED OSL configuration is described. From comparisons of OSL decay curves produced by green and blue light sources, and by examination...... of the dependence of the blue LED OSL on preheat temperature, it is deduced that there is no evidence that the blue LEDs stimulate deep traps in a different manner from broadband filtered light. It is concluded that blue LEDs offer a practical alternative to existing stimulation sources. They have the significant...

  6. High-precision, accurate optical frequency reference using a Fabry-Perót diode laser

    Science.gov (United States)

    Chang, Hongrok; Myneni, Krishna; Smith, David D.; Liaghati-Mobarhan, Hassan R.

    2017-06-01

    We show that the optical output of a temperature and current-tuned Fabry-Perót diode laser system, with no external optical feedback and in which the frequency is locked to Doppler-free hyperfine resonances of the 87Rb D2 line, can achieve high frequency stability and accuracy. Experimental results are presented for the spectral linewidth, frequency stability, and frequency accuracy of the source. Although our optical source is limited by a short-term spectral linewidth greater than 2 MHz, beat signal measurements from two such sources demonstrate a frequency stability of 1.1 kHz, or minimum Allan deviation of 4 ×1 0-12, at an integration time τ =15 s and with a frequency accuracy of 60 kHz at τ =300 s. We demonstrate the use of the optical source for the precision measurement of hyperfine level frequency spacings in the 5 P3 /2 excited state of 87Rb and provide an accurate frequency scale for optical spectroscopy.

  7. Experimental and simulation studies on a single pass, double duct solar air heater

    Energy Technology Data Exchange (ETDEWEB)

    Forson, F.K. [Kwame Nkrumah Univ. of Science and Technology, Dept. of Mechanical Engineering, Kumasi (Ghana); Rajakaruna, H. [De Montfort Univ., School of Engineering and Technology, Leicester (United Kingdom)

    2003-05-01

    A mathematical model of a single pass, double duct solar air heater (SPDDSAH) is described. The model provides a design tool capable of predicting: incident solar radiation, heat transfer coefficients, mean air flow rates, mean air temperature and relative humidity at the exit. Results from the simulation are presented and compared with experimental ones obtained on a full scale air heater and a small scale laboratory one. Reasonable agreement between the predicted and measured values is demonstrated. Predicted results from a parametric study are also presented. It is shown that significant improvement in the SPDDSAH performance can be obtained with an appropriate choice of the collector parameters and the top to bottom channel depth ratio of the two ducts. The air mass flow rate is shown to be the dominant factor in determining the overall efficiency of the heater. (Author)

  8. High-Accuracy Elevation Data at Large Scales from Airborne Single-Pass SAR Interferometry

    Directory of Open Access Journals (Sweden)

    Guy Jean-Pierre Schumann

    2016-01-01

    Full Text Available Digital elevation models (DEMs are essential data sets for disaster risk management and humanitarian relief services as well as many environmental process models. At present, on the hand, globally available DEMs only meet the basic requirements and for many services and modeling studies are not of high enough spatial resolution and lack accuracy in the vertical. On the other hand, LiDAR-DEMs are of very high spatial resolution and great vertical accuracy but acquisition operations can be very costly for spatial scales larger than a couple of hundred square km and also have severe limitations in wetland areas and under cloudy and rainy conditions. The ideal situation would thus be to have a DEM technology that allows larger spatial coverage than LiDAR but without compromising resolution and vertical accuracy and still performing under some adverse weather conditions and at a reasonable cost. In this paper, we present a novel single pass In-SAR technology for airborne vehicles that is cost-effective and can generate DEMs with a vertical error of around 0.3 m for an average spatial resolution of 3 m. To demonstrate this capability, we compare a sample single-pass In-SAR Ka-band DEM of the California Central Valley from the NASA/JPL airborne GLISTIN-A to a high-resolution LiDAR DEM. We also perform a simple sensitivity analysis to floodplain inundation. Based on the findings of our analysis, we argue that this type of technology can and should be used to replace large regions of globally available lower resolution DEMs, particularly in coastal, delta and floodplain areas where a high number of assets, habitats and lives are at risk from natural disasters. We conclude with a discussion on requirements, advantages and caveats in terms of instrument and data processing.

  9. Evaluation of a single-pass continuous whole-body 16-MDCT protocol for patients with polytrauma.

    Science.gov (United States)

    Nguyen, Duy; Platon, Alexandra; Shanmuganathan, Kathirkamanathan; Mirvis, Stuart E; Becker, Christoph D; Poletti, Pierre-Alexandre

    2009-01-01

    The purpose of this study was to compare a conventional multiregional MDCT protocol with two continuous single-pass whole-body MDCT protocols in imaging of patients with polytrauma. Ninety patients with polytrauma underwent whole-body 16-MDCT with a conventional (n=30) or one of two single-pass (n=60) protocols. The conventional protocol included unenhanced scans of the head and cervical spine and contrast-enhanced helical scans (140 mL, 4 mL/s, 300 mg I/mL) of the thorax and abdomen. The single-pass protocols consisted of unenhanced scans of the head followed by one-sweep acquisition from the circle of Willis through the pubic symphysis with a biphasic (150 mL, 6 and 4 mL/s, 300 mg I/mL) or monophasic (110 mL, 4 mL/s, 400 mg I/mL) injection. Acquisition times and interval delays between head, chest, and abdominal scans were recorded. Contrast enhancement was measured in the aortic arch, liver, spleen, and kidney. Diagnostic image quality in the same areas was assessed on a 4-point scale. Median acquisition times for the single-pass protocols were significantly shorter (-42.5%) than the acquisition time for the conventional protocol. No significant differences were found in mean enhancement values in the aorta, liver, spleen, and kidney for the three protocols. The image quality with both single-pass protocols was better than that with the conventional protocol in assessment of the mediastinum and cervical spine (p<0.05). There was no significant difference between the single-pass protocols. Use of single-pass continuous whole-body MDCT protocols can significantly decrease examination time for patients with polytrauma and improve image quality compared with a conventional serial scan protocol. Monophasic injection with highly concentrated contrast medium can reduce injection flow rate and should therefore be preferred to a biphasic injection technique.

  10. Fundamental transverse mode selection and self-stabilization in large optical cavity diode lasers under high injection current densities

    Science.gov (United States)

    Avrutin, Eugene A.; Ryvkin, Boris S.; Payusov, Alexey S.; Serin, Artem A.; Gordeev, Nikita Yu

    2015-11-01

    It is shown that in high-power, large optical cavity laser diodes at high injection currents, the optical losses due to nonuniform carrier accumulation in the optical confinement layer can ensure the laser operation in the fundamental transverse mode. An experimental demonstration of switching from second order mode to fundamental mode in large optical cavity lasers with current and/or temperature increase is reported and explained, with the calculated values for the switching current and temperature in good agreement with the measurements. The results experimentally prove the nonuniform nature of carrier accumulation in the confinement layer and may aid laser design for optimizing the output.

  11. Using Pre-TMIn Treatment to Improve the Optical Properties of Green Light Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Bing Xu

    2014-01-01

    Full Text Available We investigated the effects of pre-TMIn treatment on the optical properties of green light emitting diodes (LEDs. Although pre-TMIn treatment did not affect the epitaxial structure of quantum wells, it significantly improved the quality of the surface morphology relative to that of the untreated sample. Indium cluster can be seen by high-resolution transmission electron microscopy (HR-TEM, which is the explanation for the red-shift of photoluminescence (PL. Time-resolved photoluminescence measurements indicated that the sample prepared with pre-TMIn treatment had a shorter radiative decay time. As a result, the light output power of the treated green LED was higher than that of the conventional untreated one. Thus, pre-TMIn treatment appears to be a simple and efficient means of improving the performance of green LEDs.

  12. Monolithic integration of nitride light emitting diodes and photodetectors for bi-directional optical communication.

    Science.gov (United States)

    Jiang, Zhenyu; Atalla, Mahmoud R M; You, Guanjun; Wang, Li; Li, Xiaoyun; Liu, Jie; Elahi, Asim M; Wei, Lai; Xu, Jian

    2014-10-01

    Design and fabrication of monolithically integrated III-nitride visible light-emitting-diodes (LEDs) and ultraviolet Schottky barrier-photodetectors (SB-PDs) have been proposed and demonstrated. Responsivity up to 0.2  AW(-1) at 365 nm for GaN SB-PDs has been achieved. It is shown that those UV SB-PDs were capable of sensitive UV light detection down to 7.16×10(-4)  W/cm2 at 365 nm, whereas simultaneous operation of on-chip blue LEDs has produced negligible crosstalk at practical illumination brightness. Monolithically integrated LEDs and SB-PDs can function as transmitters to emit visible light signals, and as receivers to analyze incoming UV signals, respectively; this offers the potential of using such devices for bi-directional optical wireless communication applications.

  13. Optical and electrical characteristics of GaN vertical light emitting diode with current block layer

    International Nuclear Information System (INIS)

    Guo Enqing; Liu Zhiqiang; Wang Liancheng; Yi Xiaoyan; Wang Guohong

    2011-01-01

    A GaN vertical light emitting diode (LED) with a current block layer (CBL) was investigated. Vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL were fabricated. Optical and electrical tests were carried out. The results show that the light output power of vertical LEDs with a non-ohmic contact CBL and with a silicon dioxide CBL are 40.6% and 60.7% higher than that of vertical LEDs without a CBL at 350 mA, respectively. The efficiencies of vertical LEDs without a CBL, with a non-ohmic contact CBL and with a silicon dioxide CBL drop to 72%, 78% and 85.5% of their maximum efficiency at 350 mA, respectively. Moreover, vertical LEDs with a non-ohmic contact CBL have relatively superior anti-electrostatic ability. (semiconductor devices)

  14. Safety and efficacy of high fluence CO2 laser skin resurfacing with a single pass.

    Science.gov (United States)

    Khosh, M M; Larrabee, W F; Smoller, B

    1999-01-01

    Carbon dioxide (CO2) laser skin resurfacing has nearly replaced more traditional methods of superficial skin rejuvenation. Post-treatment erythema is the most common side effect of this method of skin resurfacing. Sublethal thermal damage to the dermis has been proposed as an etiology for post laser erythema. Recent developments in laser resurfacing technology have aimed at minimizing thermal damage to the dermis. To determine depth of skin ablation, extent of thermal injury, and ideal laser parameters for the FeatherTouch laser system. To assess the safety and efficacy of laser resurfacing at high energy fluences with a single pass. Laser resurfacing was performed in the preauricular skin of five patients undergoing rhytidectomy. A total of 60 sites were tested with fluences of 7 to 17 Joules/cm2. Histologic evaluation of excised skin showed maximal thermal injury to be restricted to 60 microns in the papillary dermis. The reticular dermis showed no evidence of injury. Based on these findings, laser resurfacing at 17 J/cm2 (70 watts) was performed on 30 patients (in the periorbital area, a maximum of 9 J/cm2 or 36 watts was used). Follow up ranged between 12 and 18 months. Based on histologic comparison of average and high fluence laser resurfacing, high fluence laser resurfacing did not cause added thermal damage to the reticular dermis. In the clinical group, no major complications such as scarring, scleral show, infection or ectropion were encountered. Transient hyperpigmentation was noted in three patients. Overall patient satisfaction was good to excellent. Post-treatment erythema lasted an average of 4 weeks. We conclude that CO2 laser resurfacing of the face (excluding the periorbital region) can be performed safely and effectively, with the FeatherTouch laser, at 17 J/cm2 with one pass. In our group of patients, laser resurfacing with a single pass at 17 J/cm2 caused less post-operative erythema than two or more passes at 9 J/cm2.

  15. RESEARCH OF THERMO-OPTICAL INHOMOGENEITIES IN Yb-Er GLASS AT DIODE PUMPING

    Directory of Open Access Journals (Sweden)

    V. Khramov

    2016-03-01

    Full Text Available Subject of Research. Investigation method of thermo-optical distortions in solid-state lasers was developed and presented. The method can be easily used for research of small diameter (approximately 2 mm active elements. Method. The experimental method described in this paper is based on the registration of deviation of the energy center of the probe beam passing through the thermally stressed active element. Main Results. We have presented experimental results of the thermal lens optical power research in the active element made of Yb-Er glass pumped transversely by a laser diode in the following modes: without generating, free-running and Q-switching. We have submitted obtained dependences of the optical power on the pumping energy. The measurements have been performed for the two polarization components at two wavelengths (632.8 nm and 1550 nm showing the absence of explicit astigmatism of the thermal lens. Practical Relevance. Knowledge of the thermal regime of such lasers gives the possibility for more precise calculation of the resonator parameters in terms of the thermal lens occurrence.

  16. Toward a nanoimprinted nanoantenna to perform optical rectification through molecular diodes

    Science.gov (United States)

    Reynaud, C. A.; Duché, D.; Ruiz, C. M.; Palanchoke, U.; Patrone, L.; Le Rouzo, J.; Labau, S.; Frolet, N.; Gourgon, C.; Alfonso, C.; Charaï, A.; Lebouin, C.; Simon, J.-J.; Escoubas, L.

    2017-12-01

    This work presents investigations about the realization and modelization of rectenna solar cells. Rectennas are antennas coupled with a rectifier to convert the alternative current originating from the antenna into direct current that can be harvested and stored. By reducing the size of the antennas to the nanoscale, interactions with visible and near-infrared light become possible. If techniques such as nanoimprint lithography make possible the fabrication of sufficiently small plasmonic structures to act as optical antennas, the concept of rectenna still faces several challenges. One of the most critical point is to achieve rectification at optical frequencies. To address this matter, we propose to use molecular diodes (ferrocenyl-alkanethiol) that can be self-assembled on metallic surfaces such as gold or silver. In this paper, we present a basic rectenna theory as well as finite-difference time-domain (FDTD) optical simulations of plasmonic structures and experimental results of both nanoimprint fabrication of samples and characterizations by electron microscopy, Raman spectroscopy, and cyclic voltammetry techniques.

  17. Optical fluence modelling for ultraviolet light emitting diode-based water treatment systems.

    Science.gov (United States)

    Simons, R; Gabbai, U E; Moram, M A

    2014-12-01

    This work presents a validated optical fluence rate model optimised for ultraviolet light-emitting diodes (UV-LEDs), which allow a very wide range of emission wavelengths and source geometries to be used in water treatment units. The model is based on a Monte Carlo approach, in which an incremental ray-tracing algorithm is used to calculate the local volumetric rate of energy absorption and subsequently convert it to the local fluence rate distribution for an UV-LED water treatment chamber of arbitrary design. The model includes contributions from optical reflections and scattering by treatment chamber walls and from scattering due to particulates and/or microorganisms. The model successfully predicts optical fluence rates in point-of-use water treatment units, as verified using biodosimetry with MS-2 bacteriophage at a UV-LED emission wavelength of 254 nm. The effects of chamber geometry are also modelled effectively and are consistent with the inactivation data for E. coli at 254 nm. The data indicate that this model is suitable for application in the design and optimisation of UV-LED-based water treatment systems. Copyright © 2014 Elsevier Ltd. All rights reserved.

  18. Analogy between optically driven injection-locked laser diodes and driven damped linear oscillators

    International Nuclear Information System (INIS)

    Murakami, Atsushi; Shore, K. Alan

    2006-01-01

    An analytical study of optically driven laser diodes (LDs) has been undertaken to meet the requirement for a theoretical treatment for chaotic drive and synchronization occurring in the injection-locked LDs with strong injection. A small-signal analysis is performed for the sets of rate equations for the injection-locked LDs driven by a sinusoidal optical signal. In particular, as a model of chaotic driving signals from LD dynamics, an optical signal caused by direct modulation to the master LD is assumed, oscillating both in field amplitude and phase as is the case with chaotic driving signals. Consequently, we find conditions that allow reduction in the degrees of freedom of the driven LD. Under these conditions, the driven response is approximated to a simple form which is found to be equivalent to driven damped linear oscillators. The validity of the application of this theory to previous work on the synchronization of chaos and related phenomena occurring in the injection-locked LDs is demonstrated

  19. Parametric analysis of plastic strain and force distribution in single pass metal spinning

    Energy Technology Data Exchange (ETDEWEB)

    Choudhary, Shashank, E-mail: shashankbit08@gmail.com, E-mail: mohantejesh93@gmail.com, E-mail: regalla@hyderabad.bits-pilani.ac.in, E-mail: ksuresh@hyderabad.bits-pilani.ac.in; Tejesh, Chiruvolu Mohan, E-mail: shashankbit08@gmail.com, E-mail: mohantejesh93@gmail.com, E-mail: regalla@hyderabad.bits-pilani.ac.in, E-mail: ksuresh@hyderabad.bits-pilani.ac.in; Regalla, Srinivasa Prakash, E-mail: shashankbit08@gmail.com, E-mail: mohantejesh93@gmail.com, E-mail: regalla@hyderabad.bits-pilani.ac.in, E-mail: ksuresh@hyderabad.bits-pilani.ac.in; Suresh, Kurra, E-mail: shashankbit08@gmail.com, E-mail: mohantejesh93@gmail.com, E-mail: regalla@hyderabad.bits-pilani.ac.in, E-mail: ksuresh@hyderabad.bits-pilani.ac.in [Department of Mechanical Engineering, BITS-Pilani, Hyderabad Campus, Shamirpet, Hyderabad, 500078, Andhra Pradesh (India)

    2013-12-16

    Metal spinning also known as spin forming is one of the sheet metal working processes by which an axis-symmetric part can be formed from a flat sheet metal blank. Parts are produced by pressing a blunt edged tool or roller on to the blank which in turn is mounted on a rotating mandrel. This paper discusses about the setting up a 3-D finite element simulation of single pass metal spinning in LS-Dyna. Four parameters were considered namely blank thickness, roller nose radius, feed ratio and mandrel speed and the variation in forces and plastic strain were analysed using the full-factorial design of experiments (DOE) method of simulation experiments. For some of these DOE runs, physical experiments on extra deep drawing (EDD) sheet metal were carried out using En31 tool on a lathe machine. Simulation results are able to predict the zone of unsafe thinning in the sheet and high forming forces that are hint to the necessity for less-expensive and semi-automated machine tools to help the household and small scale spinning workers widely prevalent in India.

  20. Capacitive deionization of arsenic-contaminated groundwater in a single-pass mode.

    Science.gov (United States)

    Fan, Chen-Shiuan; Liou, Sofia Ya Hsuan; Hou, Chia-Hung

    2017-10-01

    A single-pass-mode capacitive deionization (CDI) reactor was used to remove arsenic from groundwater in the presence of multiple ions. The CDI reactor involved an applied voltage of 1.2 V and six cell pairs of activated carbon electrodes, each of which was 20 × 30 cm 2 . The results indicate that this method achieved an effluent arsenic concentration of 0.03 mg L -1 , which is lower than the arsenic concentration standard for drinking water and irrigation sources in Taiwan, during the charging stage. Additionally, the ability of the CDI to remove other coexisting ions was studied. The presence of other ions has a significant influence on the removal of arsenic from groundwater. From the analysis of the electrosorption selectivity, the preference for anion removal could be ordered as follows: NO 3 -  > SO 4 2-  > F -  > Cl - >As. The electrosorption selectivity for cations could be ordered as follows: Ca 2+  > Mg 2+  > Na +  ∼ K + . Moreover, monovalent cations can be replaced by divalent cations at the electrode surface in the later period of the electrosorption stage. Consequently, activated carbon-based capacitive deionization is demonstrated to be a high-potential technology for remediation of arsenic-contaminated groundwater. Copyright © 2017 Elsevier Ltd. All rights reserved.

  1. Error Analysis for High Resolution Topography with Bi-Static Single-Pass SAR Interferometry

    Science.gov (United States)

    Muellerschoen, Ronald J.; Chen, Curtis W.; Hensley, Scott; Rodriguez, Ernesto

    2006-01-01

    We present a flow down error analysis from the radar system to topographic height errors for bi-static single pass SAR interferometry for a satellite tandem pair. Because of orbital dynamics the baseline length and baseline orientation evolve spatially and temporally, the height accuracy of the system is modeled as a function of the spacecraft position and ground location. Vector sensitivity equations of height and the planar error components due to metrology, media effects, and radar system errors are derived and evaluated globally for a baseline mission. Included in the model are terrain effects that contribute to layover and shadow and slope effects on height errors. The analysis also accounts for nonoverlapping spectra and the non-overlapping bandwidth due to differences between the two platforms' viewing geometries. The model is applied to a 514 km altitude 97.4 degree inclination tandem satellite mission with a 300 m baseline separation and X-band SAR. Results from our model indicate that global DTED level 3 can be achieved.

  2. Low energy dark current collimation system in single-pass linacs

    Science.gov (United States)

    Bettoni, S.; Craievich, P.; Pedrozzi, M.; Schaer, M.; Stingelin, L.

    2018-02-01

    The dark current emitted from a surface of a radio frequency cavity may be a severe issue for the activation and the protection of the components of linear accelerators, if this current is lost in an uncontrolled manner. For a single-pass linac based on a photo-injector, we studied the possibility of using a collimator installed at low energy (below 10 MeV) to dump the maximum fraction of the dark current before it is transported along the linac. We developed and experimentally verified an emission and tracking model that we used to study and optimize the dark current mitigation at SwissFEL test facility. We optimized a collimator, which is expected to reduce by two orders of magnitude the transport of the dark current to the first compressor. We have also verified the effects of wakefield excited by the beam itself passing through the collimator at such a low energy, comparing the results of beam-based measurements with an analytical model.

  3. Uranium Release from Acidic Weathered Hanford Sediments: Single-Pass Flow-Through and Column Experiments

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Guohui [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Um, Wooyong [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Pohang University of Science and Technology (POSTECH), Pohang, South Korea; Wang, Zheming [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Reinoso-Maset, Estela [Sierra; Washton, Nancy M. [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Mueller, Karl T. [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Perdrial, Nicolas [Department; Department; O’Day, Peggy A. [Sierra; Chorover, Jon [Department

    2017-09-21

    The reaction of acidic radioactive waste with sediments can induce mineral transformation reactions that, in turn, control contaminant fate. Here, sediment weathering by synthetic uranium-containing acid solutions was investigated using bench-scale experiments to simulate waste disposal conditions at Hanford’s cribs, USA. During acid weathering, the presence of phosphate exerted a strong influence over uranium mineralogy and a rapidly precipitated, crystalline uranium phosphate phase (meta-ankoleite [K(UO2)(PO4)·3H2O]) was identified using spectroscopic and diffraction-based techniques. In phosphate-free system, uranium oxyhydroxide minerals such as K-compreignacite [K2(UO2)6O4(OH)6·7H2O] were formed. Single-pass flow-through (SPFT) and column leaching experiments using synthetic Hanford pore water showed that uranium precipitated as meta-ankoleite during acid weathering was strongly retained in the sediments, with an average release rate of 2.67E-12 mol g-1 s-1. In the absence of phosphate, uranium release was controlled by dissolution of uranium oxyhydroxide (compreignacite-type) mineral with a release rate of 1.05-2.42E-10 mol g-1 s-1. The uranium mineralogy and release rates determined for both systems in this study support the development of accurate U-release models for prediction of contaminant transport. These results suggest that phosphate minerals may be a good candidate for uranium remediation approaches at contaminated sites.

  4. Non-destructive single-pass low-noise detection of ions in a beamline

    Science.gov (United States)

    Schmidt, Stefan; Murböck, Tobias; Andelkovic, Zoran; Birkl, Gerhard; Nörtershäuser, Wilfried; Stahl, Stefan; Vogel, Manuel

    2015-11-01

    We have conceived, built, and operated a device for the non-destructive single-pass detection of charged particles in a beamline. The detector is based on the non-resonant pick-up and subsequent low-noise amplification of the image charges induced in a cylindrical electrode surrounding the particles' beam path. The first stage of the amplification electronics is designed to be operated from room temperature down to liquid helium temperature. The device represents a non-destructive charge counter as well as a sensitive timing circuit. We present the concept and design details of the device. We have characterized its performance and show measurements with low-energy highly charged ions (such as Ar13+) passing through one of the electrodes of a cylindrical Penning trap. This work demonstrates a novel approach of non-destructive, low noise detection of charged particles which is, depending on the bunch structure, suitable, e.g., for ion traps, low-energy beamlines or accelerator transfer sections.

  5. Equipment for Diode Laser Pumping of New and Improved Optical Materials

    National Research Council Canada - National Science Library

    Jenssen, H

    1999-01-01

    .... Experiments using laser diodes as the pump source are essential for a complete characterization of these materials, which exploit the advantages of diode-pumping, leading potentially to compact...

  6. Evaluation of regional pulmonary blood flow in mitral valvular heart disease using single-pass radionuclide angiocardiography

    International Nuclear Information System (INIS)

    Chang-Soon Koh; Byung Tae Kim; Myung Chul Lee; Bo Yeon Cho

    1982-01-01

    Pulmonary hypertension in mitral valvular cardiac disease has been evaluated in 122 patients by a modified upper lung/lower count ratio using single-pass radionuclide angiocardiography. The mean upper lung/lower lung radio correlates well with pulmonary artery mean (r=0.483) and wedge pressure (r=0.804). After correction surgery of the cardiac valve, the ratio decreases and returns to normal range in patients judged clinically to have good surgical benifit. This modified method using single-pass technique provides additional simple, reproducible and nontraumatic results of regional pulmonary blood flow and appears to be correlated with the degree of pulmonary hypertension in mitral heart disease

  7. All-optical transistor- and diode-action and logic gates based on anisotropic nonlinear responsive liquid crystal

    Science.gov (United States)

    Wang, Cheng-Yu; Chen, Chun-Wei; Jau, Hung-Chang; Li, Cheng-Chang; Cheng, Chiao-Yu; Wang, Chun-Ta; Leng, Shi-Ee; Khoo, Iam-Choon; Lin, Tsung-Hsien

    2016-01-01

    In this paper, we show that anisotropic photosensitive nematic liquid crystals (PNLC) made by incorporating anisotropic absorbing dyes are promising candidates for constructing all-optical elements by virtue of the extraordinarily large optical nonlinearity of the nematic host. In particular, we have demonstrated several room-temperature ‘prototype’ PNLC-based all-optical devices such as optical diode, optical transistor and all primary logic gate operations (OR, AND, NOT) based on such optical transistor. Owing to the anisotropic absorption property and the optical activity of the twist alignment nematic cell, spatially non-reciprocal transmission response can be obtained within a sizeable optical isolation region of ~210 mW. Exploiting the same mechanisms, a tri-terminal configuration as an all-optical analogue of a bipolar junction transistor is fabricated. Its ability to be switched by an optical field enables us to realize an all-optical transistor and demonstrate cascadability, signal fan-out, logic restoration, and various logical gate operations such as OR, AND and NOT. Due to the possibility of synthesizing anisotropic dyes and wide ranging choice of liquid crystals nonlinear optical mechanisms, these all-optical operations can be optimized to have much lower thresholds and faster response speeds. The demonstrated capabilities of these devices have shown great potential in all-optical control system and photonic integrated circuits. PMID:27491391

  8. All-optical transistor- and diode-action and logic gates based on anisotropic nonlinear responsive liquid crystal.

    Science.gov (United States)

    Wang, Cheng-Yu; Chen, Chun-Wei; Jau, Hung-Chang; Li, Cheng-Chang; Cheng, Chiao-Yu; Wang, Chun-Ta; Leng, Shi-Ee; Khoo, Iam-Choon; Lin, Tsung-Hsien

    2016-08-05

    In this paper, we show that anisotropic photosensitive nematic liquid crystals (PNLC) made by incorporating anisotropic absorbing dyes are promising candidates for constructing all-optical elements by virtue of the extraordinarily large optical nonlinearity of the nematic host. In particular, we have demonstrated several room-temperature 'prototype' PNLC-based all-optical devices such as optical diode, optical transistor and all primary logic gate operations (OR, AND, NOT) based on such optical transistor. Owing to the anisotropic absorption property and the optical activity of the twist alignment nematic cell, spatially non-reciprocal transmission response can be obtained within a sizeable optical isolation region of ~210 mW. Exploiting the same mechanisms, a tri-terminal configuration as an all-optical analogue of a bipolar junction transistor is fabricated. Its ability to be switched by an optical field enables us to realize an all-optical transistor and demonstrate cascadability, signal fan-out, logic restoration, and various logical gate operations such as OR, AND and NOT. Due to the possibility of synthesizing anisotropic dyes and wide ranging choice of liquid crystals nonlinear optical mechanisms, these all-optical operations can be optimized to have much lower thresholds and faster response speeds. The demonstrated capabilities of these devices have shown great potential in all-optical control system and photonic integrated circuits.

  9. Analyzing degradation effects of organic light-emitting diodes via transient optical and electrical measurements

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, Tobias D., E-mail: Tobias.Schmidt@physik.uni-augsburg.de; Jäger, Lars; Brütting, Wolfgang, E-mail: Wolfgang.Bruetting@physik.uni-augsburg.de [Institute of Physics, University of Augsburg, Augsburg (Germany); Noguchi, Yutaka [Department of Electronics and Bioinformatics, School of Science and Technology, Meiji University, Kawasaki (Japan); Center of Frontier Science, Chiba University, Chiba (Japan); Ishii, Hisao [Center of Frontier Science, Chiba University, Chiba (Japan)

    2015-06-07

    Although the long-term stability of organic light-emitting diodes (OLEDs) under electrical operation made significant progress in recent years, the fundamental underlying mechanisms of the efficiency decrease during operation are not well understood. Hence, we present a comprehensive degradation study of an OLED structure comprising the well-known green phosphorescent emitter Ir(ppy){sub 3}. We use transient methods to analyze both electrical and optical changes during an accelerated aging protocol. Combining the results of displacement current measurements with time-resolved investigation of the excited states lifetimes of the emitter allows for a correlation of electrical (e.g., increase of the driving voltage due to trap formation) and optical (e.g., decrease of light-output) changes induced by degradation. Therewith, it is possible to identify two mechanisms resulting in the drop of the luminance: a decrease of the radiative quantum efficiency of the emitting system due to triplet-polaron-quenching at trapped charge carriers and a modified charge carrier injection and transport, as well as trap-assisted non-radiative recombination resulting in a deterioration of the charge carrier balance of the device.

  10. Tunable Diode Laser Atomic Absorption Spectroscopy for Detection of Potassium under Optically Thick Conditions.

    Science.gov (United States)

    Qu, Zhechao; Steinvall, Erik; Ghorbani, Ramin; Schmidt, Florian M

    2016-04-05

    Potassium (K) is an important element related to ash and fine-particle formation in biomass combustion processes. In situ measurements of gaseous atomic potassium, K(g), using robust optical absorption techniques can provide valuable insight into the K chemistry. However, for typical parts per billion K(g) concentrations in biomass flames and reactor gases, the product of atomic line strength and absorption path length can give rise to such high absorbance that the sample becomes opaque around the transition line center. We present a tunable diode laser atomic absorption spectroscopy (TDLAAS) methodology that enables accurate, calibration-free species quantification even under optically thick conditions, given that Beer-Lambert's law is valid. Analyte concentration and collisional line shape broadening are simultaneously determined by a least-squares fit of simulated to measured absorption profiles. Method validation measurements of K(g) concentrations in saturated potassium hydroxide vapor in the temperature range 950-1200 K showed excellent agreement with equilibrium calculations, and a dynamic range from 40 pptv cm to 40 ppmv cm. The applicability of the compact TDLAAS sensor is demonstrated by real-time detection of K(g) concentrations close to biomass pellets during atmospheric combustion in a laboratory reactor.

  11. Determination of the optical constants of polymer light-emitting diode films from single reflection measurements

    International Nuclear Information System (INIS)

    Zhu Dexi; Shen Weidong; Ye Hui; Liu Xu; Zhen Hongyu

    2008-01-01

    We present a simple and fast method to determine the optical constant and physical thickness of polymer films from a single reflectivity measurement. A self-consistent dispersion formula of the Forouhi-Bloomer model was introduced to fit the measured spectral curves by a modified 'Downhill' simplex algorithm. Four widely used polymer light-emitting diodes materials: poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene], poly(9,9-dioctylfluoreny-2,7-diyl) (PFO), poly(N-vinyl carbazole) and poly(3,4-ethylene dioxythiophene) : poly(styrenesulfonate) were investigated by this technique. The refractive indices over the whole visible region as well as the optical band gap extracted by this method agree well with those reported in the literature. The determined physical thicknesses present a deviation less than 4% compared with the experimental values measured by the stylus profiler. The influence of scattering loss on the fitted results is discussed to demonstrate the applicability of this technology for polymer films.

  12. FY2016 ILAW Glass Corrosion Testing with the Single-Pass Flow-Through Method

    Energy Technology Data Exchange (ETDEWEB)

    Neeway, James J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Asmussen, Robert M. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Parruzot, Benjamin PG [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Cordova, Elsa [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Williams, Benjamin D. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Leavy, Ian I. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Stephenson, John R. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); McElroy, Erin M. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2017-04-21

    The inventory of immobilized low-activity waste (ILAW) produced at the Hanford Tank Waste Treatment and Immobilization Plant (WTP) will be disposed of at the near-surface, on-site Integrated Disposal Facility (IDF). When groundwater comes into contact with the waste form, the glass will corrode and radionuclides will be released into the near-field environment. Because the release of the radionuclides is dependent on the dissolution rate of the glass, it is important that the performance assessment (PA) model accounts for the dissolution rate of the glass as a function of various chemical conditions. To accomplish this, an IDF PA model based on Transition State Theory (TST) can be employed. The model is able to account for changes in temperature, exposed surface area, and pH of the contacting solution as well as the effect of silicon concentrations in solution, specifically the activity of orthosilicic acid (H4SiO4), whose concentration is directly linked to the glass dissolution rate. In addition, the IDF PA model accounts for the alkali-ion exchange process as sodium is leached from the glass and into solution. The effect of temperature, pH, H4SiO4 activity, and the rate of ion-exchange can be parameterized and implemented directly into the PA rate law model. The rate law parameters are derived from laboratory tests with the single-pass flow-through (SPFT) method. To date, rate law parameters have been determined for seven ILAW glass compositions, thus additional rate law parameters on a wider range of compositions will supplement the existing body of data for PA maintenance activities. The data provided in this report can be used by ILAW glass scientists to further the understanding of ILAW glass behavior, by IDF PA modelers to use the rate law parameters in PA modeling efforts, and by Department of Energy (DOE) contractors and decision makers as they assess the IDF PA program.

  13. Narrow conductive structures with high aspect ratios through single-pass inkjet printing and evaporation-induced dewetting

    NARCIS (Netherlands)

    Abbel, R.; Teunissen, P.; Michels, J.; Groen, W.A.

    2015-01-01

    Inkjet printed silver lines contract to widths below 20-μm during drying on an organic planarization coating. Aspect ratios previously unprecedented with single pass inkjet printing on isotropic homogeneous substrates are obtained. This effect is caused by the subsequent evaporation of solvents from

  14. Diode-Pumped High Energy and High Average Power All-Solid-State Picosecond Amplifier Systems

    Directory of Open Access Journals (Sweden)

    Jiaxing Liu

    2015-12-01

    Full Text Available We present our research on the high energy picosecond laser operating at a repetition rate of 1 kHz and the high average power picosecond laser running at 100 kHz based on bulk Nd-doped crystals. With diode-pumped solid state (DPSS hybrid amplifiers consisting of a picosecond oscillator, a regenerative amplifier, end-pumped single-pass amplifiers, and a side-pumped amplifier, an output energy of 64.8 mJ at a repetition rate of 1 kHz was achieved. An average power of 37.5 W at a repetition rate of 100 kHz pumped by continuous wave laser diodes was obtained. Compact, stable and high power DPSS laser amplifier systems with good beam qualities are excellent picosecond sources for high power optical parametric chirped pulse amplification (OPCPA and high-efficiency laser processing.

  15. Effects of surface morphology on the optical and electrical properties of Schottky diodes of CBD deposited ZnO nanostructures

    Science.gov (United States)

    Mwankemwa, Benard S.; Akinkuade, Shadrach; Maabong, Kelebogile; Nel, Jackie M.; Diale, Mmantsae

    2018-04-01

    We report on effect of surface morphology on the optical and electrical properties of chemical bath deposited Zinc oxide (ZnO) nanostructures. ZnO nanostructures were deposited on the seeded conducting indium doped tin oxide substrate positioned in three different directions in the growth solution. Field emission scanning electron microscopy was used to evaluate the morphological properties of the synthesized nanostructures and revealed that the positioning of the substrate in the growth solution affects the surface morphology of the nanostructures. The optical absorbance, photoluminescence and Raman spectroscopy of the resulting nanostructures are discussed. The electrical characterization of the Schottky diode such as barrier height, ideality factor, rectification ratios, reverse saturation current and series resistance were found to depend on the nanostructures morphology. In addition, current transport mechanism in the higher forward bias of the Schottky diode was studied and space charge limited current was found to be the dominant transport mechanism in all samples.

  16. Determination of temperature and residual laser energy on film fiber-optic thermal converter for diode laser surgery.

    Science.gov (United States)

    Liu, Weichao; Kong, Yaqun; Shi, Xiafei; Dong, Xiaoxi; Wang, Hong; Zhao, Jizhi; Li, Yingxin

    2017-12-01

    The diode laser was utilized in soft tissue incision of oral surgery based on the photothermic effect. The contradiction between the ablation efficiency and the thermal damage has always been in diode laser surgery, due to low absorption of its radiation in the near infrared region by biological tissues. Fiber-optic thermal converters (FOTCs) were used to improve efficiency for diode laser surgery. The purpose of this study was to determine the photothermic effect by the temperature and residual laser energy on film FOTCs. The film FOTC was made by a distal end of optical fiber impacting on paper. The external surface of the converter is covered by a film contained amorphous carbon. The diode laser with 810 nm worked at the different rated power of 1.0 W, 1.5 W, 2.0 W, 3.0 W, 4.0 W, 5.0 W, 6.0 W, 7.0 W, 8.0 W in continuous wave (CW)and pulse mode. The temperature of the distal end of optical fiber was recorded and the power of the residual laser energy from the film FOTC was measured synchronously. The temperature, residual power and the output power were analyzed by linear or exponential regression model and Pearson correlations analysis. The residual power has good linearity versus output power in CW and pulse modes (R 2  = 0.963, P fiber tip both in CW and pulsed mode while limiting the ability of the laser light to interact directly with target tissue. Film FOTCs can concentrate part of laser energy transferred to heat on distal end of optical fiber, which have the feasibility of improving efficiency and reducing thermal damage of deep tissue.

  17. Submicrometre resolved optical characterization of green nanowire-based light emitting diodes

    International Nuclear Information System (INIS)

    Bavencove, A-L; Tourbot, G; Garcia, J; Desieres, Y; Gilet, P; Levy, F; Andre, B; Gayral, B; Daudin, B; Dang, Le Si

    2011-01-01

    The electroluminescent properties of InGaN/GaN nanowire-based light emitting diodes (LEDs) are studied at different resolution scales. Axial one-dimensional heterostructures were grown by plasma-assisted molecular beam epitaxy (PAMBE) directly on a silicon (111) substrate and consist of the following sequentially deposited layers: n-type GaN, three undoped InGaN/GaN quantum wells, p-type AlGaN electron blocking layer and p-type GaN. From the macroscopic point of view, the devices emit light in the green spectral range (around 550 nm) under electrical injection. At 100 mA DC current, a 1 mm 2 chip that integrates around 10 7 nanowires emits an output power on the order of 10 μW. However, the emission of the nanowire-based LED shows a spotty and polychromatic emission. By using a confocal microscope, we have been able to improve the spatial resolution of the optical characterizations down to the submicrometre scale that can be assessed to a single nanowire. Detailed μ-electroluminescent characterization (emission wavelength and output power) over a representative number of single nanowires provides new insights into the vertically integrated nanowire-based LED operation. By combining both μ-electroluminescent and μ-photoluminescent excitation, we have experimentally shown that electrical injection failure is the major source of losses in these nanowire-based LEDs.

  18. Real-time optical monitoring of microbial growth using optimal combination of light-emitting diodes

    Science.gov (United States)

    Kobayashi, Ken-ichi; Yamada, Takeshi; Hiraishi, Akira; Nakauchi, Shigeki

    2012-12-01

    We developed a real-time optical monitoring system consisting of a monochrome complementary metal-oxide semiconductor (CMOS) camera and two light-emitting diodes (LEDs) with a constant temperature incubator for the rapid detection of microbial growth on solid media. As a target organism, we used Alicyclobacillus acidocaldarius, which is an acidophilic thermophilic endospore-forming bacterium able to survive in pasteurization processes and grow in acidic drink products such as apple juice. This bacterium was cultured on agar medium with a redox dye applied to improve detection sensitivity. On the basis of spectroscopic properties of the colony, medium, and LEDs, an optimal combination of two LED illuminations was selected to maximize the contrast between the colony and medium areas. We measured A. acidocaldarius and Escherichia coli at two different dilution levels using these two LEDs. From the results of time-course changes in the number of detected pixels in the detection images, a similar growth rate was estimated amongst the same species of microbes, regardless of the dilution level. This system has the ability to detect a colony of approximately 26 μm in diameter in a detection image, and it can be interpreted that the size corresponds to less than 20 μm diameter in visual inspection.

  19. Optical diffraction tomography microscopy with transport of intensity equation using a light-emitting diode array

    Science.gov (United States)

    Li, Jiaji; Chen, Qian; Zhang, Jialin; Zhang, Zhao; Zhang, Yan; Zuo, Chao

    2017-08-01

    Optical diffraction tomography (ODT) is an effective label-free technique for quantitatively refractive index imaging, which enables long-term monitoring of the internal three-dimensional (3D) structures and molecular composition of biological cells with minimal perturbation. However, existing optical tomographic methods generally rely on interferometric configuration for phase measurement and sophisticated mechanical systems for sample rotation or beam scanning. Thereby, the measurement is suspect to phase error coming from the coherent speckle, environmental vibrations, and mechanical error during data acquisition process. To overcome these limitations, we present a new ODT technique based on non-interferometric phase retrieval and programmable illumination emitting from a light-emitting diode (LED) array. The experimental system is built based on a traditional bright field microscope, with the light source replaced by a programmable LED array, which provides angle-variable quasi-monochromatic illumination with an angular coverage of ±37 degrees in both x and y directions (corresponding to an illumination numerical aperture of ∼0.6). Transport of intensity equation (TIE) is utilized to recover the phase at different illumination angles, and the refractive index distribution is reconstructed based on the ODT framework under first Rytov approximation. The missing-cone problem in ODT is addressed by using the iterative non-negative constraint algorithm, and the misalignment of the LED array is further numerically corrected to improve the accuracy of refractive index quantification. Experiments on polystyrene beads and thick biological specimens show that the proposed approach allows accurate refractive index reconstruction while greatly reduced the system complexity and environmental sensitivity compared to conventional interferometric ODT approaches.

  20. The features of electro-optical memory effect for 1.54 mum electroluminescence of an Er doped Si diode

    Energy Technology Data Exchange (ETDEWEB)

    Andreev, B.A.; Krasilnik, Z.F. [Institute for Physics of Microstructures, RAS, GSP-105, Nizhny Novgorod 603950 (Russian Federation); Kryzhkov, D.I., E-mail: krizh@ipm.sci-nnov.r [Institute for Physics of Microstructures, RAS, GSP-105, Nizhny Novgorod 603950 (Russian Federation); Kudryavtsev, K.E.; Kuznetsov, V.P. [Institute for Physics of Microstructures, RAS, GSP-105, Nizhny Novgorod 603950 (Russian Federation)

    2009-12-15

    The features of electro-optical memory effect ('stored' electroluminescence) for 1.54 mum electroluminescence of an Er-doped Si diode have been investigated. It is shown, that excitation mechanism for the stored electroluminescence is impact excitation of Er{sup 3+} ions by the electrons, released from deep traps. High excitation efficiency for stored electroluminescence has been demonstrated (500 times higher compared to forward bias electroluminescence). Optical excitation of 'stored' electroluminescence has been demonstrated with band-to-band illumination instead of forward bias injection pulse.

  1. Optically Induced PN Junction Diode and Photovoltaic Response on Ambipolar MoSe2 Field-effect Transistor

    Science.gov (United States)

    Pradhan, Nihar; Lu, Zhengguang; Rhodes, Daniel; Terrones, Mauricio; Smirnov, Dmitry; Balicas, Luis

    2015-03-01

    Transition metal dichalcogenides (TMDs) have emerged as an attractive material for electronic and optoelectronic devices due to their sizable band gap, flexibility and reduced dimensionality, which makes them promising candidates for applications in translucent optoelectronics components, such as solar cells and light emitting diodes. Here, we present an optically induced diode like response and concomitant photovoltaic effect in few-atomic layers molybdenum diselenide (MoSe2) field-effect transistors. Compared to recently reported PN junctions based on TMDs, ambipolar MoSe2 shows nearly ideal diode rectification under illumination, with a sizable photovoltaic efficiency. The observed light induced diode response under fixed gate voltage, yields a maximum open circuit voltage 0.28V and short circuit current 230nA at 30uW incident laser power. The sense of current rectification can be altered by changing the polarity of the applied gate voltage (Vbg) . At Vbg = 0V the highest electrical power obtained is 175pW corresponding to a maximum photovoltaic efficiency of 0.01%. These values increased to 11nW and 0.05% under a Vbg = -7.5V. At an excitation voltage 1V we observed maximum photocurrent responsivity surpassing 100mA/W with corresponding external quantum efficiency ~ 30%.

  2. Pulsed-diode-pumped, all-solid-state, electro-optically controlled picosecond Nd:YAG lasers

    International Nuclear Information System (INIS)

    Gorbunkov, Mikhail V; Shabalin, Yu V; Konyashkin, A V; Kostryukov, P V; Olenin, A N; Tunkin, V G; Morozov, V B; Rusov, V A; Telegin, L S; Yakovlev, D V

    2005-01-01

    The results of the development of repetitively pulsed, diode-pumped, electro-optically controlled picosecond Nd:YAG lasers of two designs are presented. The first design uses the active-passive mode locking with electro-optical lasing control and semiconductor saturable absorber mirrors (SESAM). This design allows the generation of 15-50-ps pulses with an energy up to 0.5 mJ and a maximum pulse repetition rate of 100 Hz. The laser of the second design generates 30-ps pulses due to combination of positive and negative electro-optical feedback and the control of the electro-optical modulator by the photocurrent of high-speed semiconductor structures. (active media. lasers)

  3. Optical, spectral and thermal characteristics of GaN-based vertical light emitting diodes on graphite substrate

    International Nuclear Information System (INIS)

    Lee, H K; Lee, D H; Chung, K S; Yu, J S

    2011-01-01

    We investigated the optical, spectral and thermal characteristics of GaN-based blue vertical light emitting diodes (VLEDs) on graphite substrate in comparison with conventional lateral LEDs (LLEDs) on sapphire substrate with a mesa size of 1 × 1 mm 2 . For fabricated VLEDs and LLEDs, the temperature-dependent optical and spectral characteristics were measured in the temperature range of 288–378 K and the junction temperatures (T j ) were experimentally determined by the forward voltage method. From these results, the improved optical property and high thermal stability were achieved by the VLED structure on graphite substrate. At 350 mA, the optical output power of the VLED on graphite substrate was improved by 23% compared to the LLED on sapphire substrate at the temperature of 298 K. Also, the VLED on graphite substrate exhibited lower junction temperature and thermal resistance than those of the LLED on sapphire substrate

  4. Label-free optical-resolution photoacoustic microscopy of superficial microvasculature using a compact visible laser diode excitation

    Science.gov (United States)

    Zeng, Lvming; Piao, Zhonglie; Huang, Shenghai; Jia, Wangcun; Chen, Zhongping

    2015-01-01

    We have developed laser-diode-based optical-resolution photoacoustic microscopy (LD-OR-PAM) of superficial microvasculature which has the desirable properties of being compact, low-cost, and label-free. A 300-mW visible pulsed laser diode was operated at a 405 ± 5 nm wavelength with a pulse energy as low as 52 nJ. By using a 3.6 MHz ultrasound transducer, the system was tested on carbon fibers with a lateral resolution of 0.95 µm and an SNR of 38 dB. The subcutaneous microvasculature on a mouse back was imaged without an exogenous contrast agent which demonstrates the potential of the proposed prototype for skin chromophores. Our eventual goal is to offer a practical and affordable multi-wavelength functional LD-OR-PAM instrument suitable for clinical applications. PMID:26698732

  5. CW frequency doubling of 1029 nm radiation using single pass bulk and waveguide PPLN crystals

    Czech Academy of Sciences Publication Activity Database

    Chiodo, N.; Du Burck, F.; Hrabina, Jan; Candela, Y.; Wallerand, J. P.; Acef, O.

    2013-01-01

    Roč. 311, 15 January (2013), s. 239-244 ISSN 0030-4018 R&D Projects: GA ČR GPP102/11/P820 Institutional support: RVO:68081731 Keywords : IR laser * second harmonic generation * waveguide and bulk crystals * periodically poled lithium niobate * 1029 nm wavelength Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.542, year: 2013

  6. Observation of phase noise reduction in photonically synthesized sub-THz signals using a passively mode-locked laser diode and highly selective optical filtering

    DEFF Research Database (Denmark)

    Criado, A. R.; Acedo, P.; Carpintero, G.

    2012-01-01

    A Continuous Wave (CW) sub-THz photonic synthesis setup based on a single Passively Mode-Locked Laser Diode (PMLLD) acting as a monolithic Optical Frequency Comb Generator (OFCG) and highly selective optical filtering has been implemented to evaluate the phase noise performance of the generated sub...

  7. Single-pass beam measurements for the verification of the LHC magnetic model

    CERN Document Server

    Calaga, R; Redaelli, S; Sun, Y; Tomas, R; Venturini-Delsolaro, W; Zimmermann, F

    2010-01-01

    During the 2009 LHC injection tests, the polarities and effects of specific quadrupole and higher-order magnetic circuits were investigated. A set of magnet circuits had been selected for detailed investigation based on a number of criteria. On or off-momentum difference trajectories launched via appropriate orbit correctors for varying strength settings of the magnet circuits under study - e.g. main, trim and skew quadrupoles; sextupole families and spool piece correctors; skew sextupoles, octupoles - were compared with predictions from various optics models. These comparisons allowed confirming or updating the relative polarity conventions used in the optics model and the accelerator control system, as well as verifying the correct powering and assignment of magnet families. Results from measurements in several LHC sectors are presented.

  8. Optical Diode Effect at Spin-Wave Excitations of the Room-Temperature Multiferroic BiFeO_{3}.

    Science.gov (United States)

    Kézsmárki, I; Nagel, U; Bordács, S; Fishman, R S; Lee, J H; Yi, Hee Taek; Cheong, S-W; Rõõm, T

    2015-09-18

    Multiferroics permit the magnetic control of the electric polarization and the electric control of the magnetization. These static magnetoelectric (ME) effects are of enormous interest: The ability to read and write a magnetic state current-free by an electric voltage would provide a huge technological advantage. Dynamic or optical ME effects are equally interesting, because they give rise to unidirectional light propagation as recently observed in low-temperature multiferroics. This phenomenon, if realized at room temperature, would allow the development of optical diodes which transmit unpolarized light in one, but not in the opposite, direction. Here, we report strong unidirectional transmission in the room-temperature multiferroic BiFeO_{3} over the gigahertz-terahertz frequency range. The supporting theory attributes the observed unidirectional transmission to the spin-current-driven dynamic ME effect. These findings are an important step toward the realization of optical diodes, supplemented by the ability to switch the transmission direction with a magnetic or electric field.

  9. Near-infrared diode laser based spectroscopic detection of ammonia: a comparative study of photoacoustic and direct optical absorption methods

    Science.gov (United States)

    Bozoki, Zoltan; Mohacsi, Arpad; Szabo, Gabor; Bor, Zsolt; Erdelyi, Miklos; Chen, Weidong; Tittel, Frank K.

    2002-01-01

    A photoacoustic spectroscopic (PAS) and a direct optical absorption spectroscopic (OAS) gas sensor, both using continuous-wave room-temperature diode lasers operating at 1531.8 nm, were compared on the basis of ammonia detection. Excellent linear correlation between the detector signals of the two systems was found. Although the physical properties and the mode of operation of both sensors were significantly different, their performances were found to be remarkably similar, with a sub-ppm level minimum detectable concentration of ammonia and a fast response time in the range of a few minutes.

  10. Theoretical study on the thermal and optical features of a diode side-pumped alkali laser

    Science.gov (United States)

    Han, Juhong; Liu, Xiaoxu; Wang, Hongyuan; Cai, He; An, Guofei; Zhang, Wei; Wang, You

    2018-03-01

    As one of the most hopeful candidates to achieve high power performances, a diode-pumped alkali laser (DPAL) has attracted a lot of attention in the last decade. Comparing with a diode end-pumped alkali laser (DEPAL), a diode side-pumped alkali laser (DSPAL) has great potentiality to realize an even-higher output of alkali lasers. However, there are few related researching studies concern DSPAL. In this paper, we introduce a theoretical model to investigate the physical features of a double-directions side-pumped alkali laser. The distributions of the population density, temperature, and absorption power at the cross section of a vapor cell are systematically studied. The analyses should be valuable for design of a steady high-powered DPAL.

  11. Thermo-Mechanical Analysis of a Single-Pass Weld Overlay and Girth Welding in Lined Pipe

    Science.gov (United States)

    Obeid, Obeid; Alfano, Giulio; Bahai, Hamid

    2017-08-01

    The paper presents a nonlinear heat-transfer and mechanical finite-element (FE) analyses of a two-pass welding process of two segments of lined pipe made of a SUS304 stainless steel liner and a C-Mn steel pipe. The two passes consist of the single-pass overlay welding (inner lap weld) of the liner with the C-Mn steel pipe for each segment and the single-pass girth welding (outer butt weld) of the two segments. A distributed power density of the moving welding torch and a nonlinear heat-transfer coefficient accounting for both radiation and convection have been used in the analysis and implemented in user subroutines for the FE code ABAQUS. The modeling procedure has been validated against previously published experimental results for stainless steel and carbon steel welding separately. The model has been then used to determine the isotherms induced by the weld overlay and the girth welding and to clarify their influence on the transient temperature field and residual stress in the lined pipe. Furthermore, the influence of the cooling time between weld overlay and girth welding and of the welding speed have been examined thermally and mechanically as they are key factors that can affect the quality of lined pipe welding.

  12. 2.3 Gbit/s underwater wireless optical communications using directly modulated 520 nm laser diode.

    Science.gov (United States)

    Oubei, Hassan Makine; Li, Changping; Park, Ki-Hong; Ng, Tien Khee; Alouini, Mohamed-Slim; Ooi, Boon S

    2015-08-10

    We experimentally demonstrate a record high-speed underwater wireless optical communication (UWOC) over 7 m distance using on-off keying non-return-to-zero (OOK-NRZ) modulation scheme. The communication link uses a commercial TO-9 packaged pigtailed 520 nm laser diode (LD) with 1.2 GHz bandwidth as the optical transmitter and an avalanche photodiode (APD) module as the receiver. At 2.3 Gbit/s transmission, the measured bit error rate of the received data is 2.23×10(-4), well below the forward error correction (FEC) threshold of 2×10(-3) required for error-free operation. The high bandwidth of the LD coupled with high sensitivity APD and optimized operating conditions is the key enabling factor in obtaining high bit rate transmission in our proposed system. To the best of our knowledge, this result presents the highest data rate ever achieved in UWOC systems thus far.

  13. 2.3 Gbit/s underwater wireless optical communications using directly modulated 520 nm laser diode

    KAUST Repository

    Oubei, Hassan M.

    2015-07-30

    We experimentally demonstrate a record high-speed underwater wireless optical communication (UWOC) over 7 m distance using on-off keying non-return-to-zero (OOK-NRZ) modulation scheme. The communication link uses a commercial TO-9 packaged pigtailed 520 nm laser diode (LD) with 1.2 GHz bandwidth as the optical transmitter and an avalanche photodiode (APD) module as the receiver. At 2.3 Gbit/s transmission, the measured bit error rate of the received data is 2.23×10−4, well below the forward error correction (FEC) threshold of 2×10−3 required for error-free operation. The high bandwidth of the LD coupled with high sensitivity APD and optimized operating conditions is the key enabling factor in obtaining high bit rate transmission in our proposed system. To the best of our knowledge, this result presents the highest data rate ever achieved in UWOC systems thus far.

  14. Molecular absorption measurements with an optical fibre coupled array of ultra-violet light-emitting diodes.

    Science.gov (United States)

    Bui, Duy Anh; Kraiczek, Karsten G; Hauser, Peter C

    2017-09-15

    A photometric detector based on eight different light-emitting diodes covering the ultraviolet range from 255 nm to 350 nm is described. These are coupled with fused silica optical fibres to a conventional cuvette with 1 cm optical path length or to a low volume flow through cell for detection in high-performance liquid chromatography. Photodiodes are employed for the measurement of the transmitted intensity as well as of a reference signal and the photocurrents are processed with a log-ratio amplifier to obtain a voltage proportional to absorbance values. The wavelength desired for the measurement at hand is selected by electronically switching on the requisite light-emitting diode. The detector was found to have a low noise level of 80 μAU. In batch-wise measurements as well as in detection for high-performance liquid chromatography dynamic ranges of 2-3 orders of magnitude were possible. Reproducibilities in peak areas for the latter application were better than 1%. Copyright © 2017 Elsevier B.V. All rights reserved.

  15. Modeling of thermal and optical effects in dental pulp during the irradiation with neodymium and diode lasers

    International Nuclear Information System (INIS)

    Farhat, Patricia Bahls de Almeida

    2003-01-01

    During the development of applications of high intensity lasers in the enamel and dentine, adverse thermal effects into the entire dental structure, including the pulp, must be verified. The measurement of the temperature in the intact pulp, however, is not a solved problem. For this purpose, models have been used frequently, using extracted teeth, with pulpal cavities filled with materials that simulate only thermal properties of the pulp. Current models, however, do not simulate optical properties of the pulp, not taking the remaining radiation in the pulp chamber into account. The aim of this study was to verify if the remaining radiation from neodymium and diode lasers that reach the pulp chamber, at the models using extracted bovine teeth, can cause local thermal effects. For this purpose, two models were developed, using extracted bovine teeth with their pulp chambers filled with water (simulating pulp thermal characteristics) without (model 1) and with (model 2) an optical absorbent. Models were radiated with 1 W. The obtained results show that, for both lasers, the temperature rise in model 2 pulp chamber is: up to 11 % higher than in the model 1 when the enamel is radiated; and up to 37% higher than in the model 1 when dentine is radiated (1 mm from the pulp), indicating that the level of the remaining radiation is relevant for the construction of models excited by the neodymium and diode lasers. (author)

  16. Spectral, spatial and temporal control of high-power diode lasers through nonlinear optical feedback

    NARCIS (Netherlands)

    van Voorst, P.D.

    2008-01-01

    A high-power diode laser offers multi-Watt output power from a small and efficient device, which makes them an interesting source for numerous applications. The spatial and spectral output however, are of reduced quality which limits the applicability. This limited quality is connected to the design

  17. Optical response characteristics of strained uniform fiber Bragg grating using laser diode

    Science.gov (United States)

    Setiono, Andi; Widiyatmoko, Bambang; Purnamaningsih, Retno Wigajatri

    2015-01-01

    The working principle of the FBG strain sensor using laser diode (λ = 1551.9 - 1553 nm) as a light source is reported. Experimental results show that by straining the bare uniform FBG (λB = 1552 nm) for every 0.01 mm in room temperature, the transmitted and refelcted power were varied according to the state of FBG strains.

  18. Estimation of Most Favorable Optical Window Position Subject to Achieve Finest Optical Control of Lateral DDR IMPATT Diode Designed to Operate at W-Band

    Directory of Open Access Journals (Sweden)

    A. Acharyya

    2014-06-01

    Full Text Available The optimum position of the optical window (OW of illuminated lateral double-drift region (DDR impact avalanche transit time (IMPATT device has been determined subject to achieve the finest optical control of both DC and RF properties of the device. The OW is a tiny hole that has to be created on the oxide layer through which the light energy of appropriate wavelength can be coupled to the space charge region of the device. A non-sinusoidal voltage is assumed to be applied across the diode and the corresponding terminal current response is obtained from a two-dimensional (2-D large-signal (L-S simulation technique developed by the authors for illuminated lateral DDR IMPATT diode. Both the DC and L-S properties of the illuminated device based on Si, designed to operate at W-band frequencies (75 – 110 GHz are obtained from the said L-S simulation. Simulation is carried out for different incident optical power levels of different wavelengths (600 – 1000 nm by varying the position of the fixed sized OW on the oxide layer along the direction of electrical conduction of the device. Results show that, the most favorable optical tuning can be achieved when the OW is entirely created over the p-type depletion layer, i.e. when the photocurrent is purely electron dominated. Also the 700 nm wavelength is found to be most suitable wavelength for obtaining the maximum optical modulation of both DC and RF properties of the device.

  19. A diode-laser optical frequency standard based on laser-cooled Ca atoms: sub-kilohertz spectroscopy by optical shelving detection

    International Nuclear Information System (INIS)

    Oates, C.W.; Bondu, F.; Fox, R.W.; Hollberg, L.

    1999-01-01

    We report an optical frequency standard at 657 nm based on laser-cooled/trapped Ca atoms. The system consists of a novel, compact magneto-optic trap which uses 50 mW of frequency-doubled diode laser light at 423 nm and can trap >10 7 Ca atoms in 20 ms. High resolution spectroscopy on this atomic sample using the narrow 657 nm intercombination line resolves linewidths (FWHM) as narrow as 400 Hz, the natural linewidth of the transition. The spectroscopic signal-to-noise ratio is enhanced by an order of magnitude with the implementation of a ''shelving'' detection scheme on the 423 nm transition. Our present apparatus achieves a fractional frequency instability of 5 x 10 -14 in 1 s with a potential atom shot-noise-limited performance of 10 -16 τ -1/2 and excellent prospects for high accuracy. (orig.)

  20. High power diode laser remelting of metals

    International Nuclear Information System (INIS)

    Chmelickova, H; Tomastik, J; Ctvrtlik, R; Supik, J; Nemecek, S; Misek, M

    2014-01-01

    This article is focused on the laser surface remelting of the steel samples with predefined overlapping of the laser spots. The goal of our experimental work was to evaluate microstructure and hardness both in overlapped zone and single pass ones for three kinds of ferrous metals with different content of carbon, cast iron, non-alloy structural steel and tool steel. High power fibre coupled diode laser Laserline LDF 3600-100 was used with robotic guided processing head equipped by the laser beam homogenizer that creates rectangular beam shape with uniform intensity distribution. Each sample was treated with identical process parameters - laser power, beam diameter, focus position, speed of motion and 40% spot overlap. Dimensions and structures of the remelted zone, zone of the partial melting, heat affected zone and base material were detected and measured by means of laser scanning and optical microscopes. Hardness progress in the vertical axis of the overlapped zone from remelted surface layer to base material was measured and compared with the hardness of the single spots. The most hardness growth was found for cast iron, the least for structural steel. Experiment results will be used to processing parameters optimization for each tested material separately.

  1. Single Pass Laser Welding with Multiple Spots to Join Four Sheets in a Butt-joint Configuration

    Science.gov (United States)

    Kristiansen, Morten; Hansen, Klaus Schütt; Langbak, Andreas; Johansen, Sebastian Blegebrønd; Krempin, Simon Borup; Hornum, Mattias Døssing

    Laser keyhole welding is widely used in industry due to its large welding depth and low heat input. For some industrial cases it is necessary to widen the beam to cover the joint configuration, which instead results in a lower intensity and surface conduction welds. The introduction of the high-power single mode fiber laser makes it possible to deal with this problem, because the beam can be shaped into a pre-defined pattern of multiple spots shaped to the actual joint configuration. The intensity of each spot is sufficient to make a keyhole. A case with four sheets in a butt-joint configuration is used to demonstrate the principle of how to design a spot pattern which ensures weld quality in case of a single pass laser weld.

  2. Lucretia A Matlab-Based Toolbox for the Modeling and Simulation of Single-Pass Electron Beam Transport Systems

    CERN Document Server

    Tenenbaum, P G

    2005-01-01

    We report on Lucretia, a new simulation tool for the study of single-pass electron beam transport systems. Lucretia supports a combination of analytic and tracking techniques to model the tuning and operation of bunch compressors, linear accelerators, and beam delivery systems of linear colliders and linac-driven Free Electron Laser (FEL) facilities. Extensive use of Matlab scripting, graphics, and numerical capabilities maximize the flexibility of the system, and emphasis has been placed on representing and preserving the fixed relationships between elements (common girders, power supplies, etc.) which must be respected in the design of tuning algorithms. An overview of the code organization, some simple examples, and plans for future development are discussed.

  3. Research and investigation of a communication chain on optical fiber with a Fabry-Perot power diode for the automotive industry

    Science.gov (United States)

    Bacis, Irina Bristena; Vasile, Alexandru; Ionescu, Ciprian; Marghescu, Cristina

    2016-12-01

    The purpose of this paper is to analyze different power devices - emitters of optical flow, from the point of view of optical coupling, emitted optical powers, optical fiber losses and receiver. The research and characterization of the transmission through a power optical system is done using a computer system specialized for the automotive industry. This system/platform can deliver current pulses that are controlled by a computer through a software (it is possible to set different parameters such as pulse repetition frequency, duty cycle, and current intensity). For the experiments a power Fabry Perot 1035 laser diode operating in pulse with μφ 1055 nm, Ith = 40 mA, and Iop =750 mA was used with a single-mode SFM 128 optical fiber and an EM type optical coupler connected through alignment. Two types of measurements were conducted to demonstrate the usefulness of the experimental structure. In the first case the amplitude of the voltage pulses was measured at the output of an optical detector with receiving diode in a built-in amplifier with a 50 kΩ load resistance. In the second stage measurements were conducted to determine the optical power injected in the optical fiber and received at the reception cell of a power meter. Another parameter of optical coupling that can be measured using the experimental structure is irradiation. This parameter is very important to determine the optimum cutting angle of the fiber for continuity welding.

  4. Diode probes for spatiotemporal optical control of multiple neurons in freely moving animals

    Science.gov (United States)

    Koos, Tibor; Buzsáki, György

    2012-01-01

    Neuronal control with high temporal precision is possible with optogenetics, yet currently available methods do not enable to control independently multiple locations in the brains of freely moving animals. Here, we describe a diode-probe system that allows real-time and location-specific control of neuronal activity at multiple sites. Manipulation of neuronal activity in arbitrary spatiotemporal patterns is achieved by means of an optoelectronic array, manufactured by attaching multiple diode-fiber assemblies to high-density silicon probes or wire tetrodes and implanted into the brains of animals that are expressing light-responsive opsins. Each diode can be controlled separately, allowing localized light stimulation of neuronal activators and silencers in any temporal configuration and concurrent recording of the stimulated neurons. Because the only connections to the animals are via a highly flexible wire cable, unimpeded behavior is allowed for circuit monitoring and multisite perturbations in the intact brain. The capacity of the system to generate unique neural activity patterns facilitates multisite manipulation of neural circuits in a closed-loop manner and opens the door to addressing novel questions. PMID:22496529

  5. Optical and structural properties of CuO nanofilm: Its diode application

    Energy Technology Data Exchange (ETDEWEB)

    Erdogan, Ibrahim Y. [Bingoel University, Faculty of Sciences and Arts, Department of Chemistry, 12000 Bingoel (Turkey); Guellue, O., E-mail: omergullu@gmail.co [Batman University, Faculty of Sciences and Arts, Department of Physics, 72060 Batman (Turkey)

    2010-03-04

    The high crystalline CuO nanofilms have been prepared by spin coating and annealing combined with a simple chemical method. The obtained films have been characterized by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, ultraviolet-vis (UV-vis) spectroscopy and photoluminescence (PL) spectroscopy. Structural analysis results demonstrate that the single phase CuO on Si (1 0 0) substrate is of high a crystalline structure with a dominant in monoclinic (1 1 1) orientation. FT-IR results confirm the formation of pure CuO phase. UV-vis absorption measurements indicate that the band gap of the CuO films is 2.64 eV. The PL spectrum of the CuO films shows a broad emission band centered at 467 nm, which is consistent with absorption measurement. Also, Au/CuO/p-Si metal/interlayer/semiconductor (MIS) diodes have been fabricated. Electronic properties (current-voltage) of these structures were investigated. In addition, the interfacial state properties of the MIS diode were obtained. The interface-state density of the MIS diode was found to vary from 6.21 x 10{sup 12} to 1.62 x 10{sup 12} eV{sup -1} cm{sup -2}.

  6. Testing the single-pass VOC removal efficiency of an active green wall using methyl ethyl ketone (MEK).

    Science.gov (United States)

    Torpy, Fraser; Clements, Nicholas; Pollinger, Max; Dengel, Andy; Mulvihill, Isaac; He, Chuan; Irga, Peter

    2018-01-01

    In recent years, research into the efficacy of indoor air biofiltration mechanisms, notably living green walls, has become more prevalent. Whilst green walls are often utilised within the built environment for their biophilic effects, there is little evidence demonstrating the efficacy of active green wall biofiltration for the removal of volatile organic compounds (VOCs) at concentrations found within an interior environment. The current work describes a novel approach to quantifying the VOC removal effectiveness by an active living green wall, which uses a mechanical system to force air through the substrate and plant foliage. After developing a single-pass efficiency protocol to understand the immediate effects of the system, the active green wall was installed into a 30-m 3 chamber representative of a single room and presented with the contaminant 2-butanone (methyl ethyl ketone; MEK), a VOC commonly found in interior environments through its use in textile and plastic manufacture. Chamber inlet levels of MEK remained steady at 33.91 ± 0.541 ppbv. Utilising a forced-air system to draw the contaminated air through a green wall based on a soil-less growing medium containing activated carbon, the combined effects of substrate media and botanical component within the biofiltration system showed statistically significant VOC reduction, averaging 57% single-pass removal efficiency over multiple test procedures. These results indicate a high level of VOC removal efficiency for the active green wall biofilter tested and provide evidence that active biofiltration may aid in reducing exposure to VOCs in the indoor environment.

  7. Simulation of Terahertz Frequency Sources. Polar-Optical Phonon Enhancement of Harmonic Generation in Schottky Diodes

    National Research Council Canada - National Science Library

    Gelmont, Boris

    2002-01-01

    ... polar optical vibration frequency When a high frequency input signal is applied to a frequency multiplier device polar-optical phonons can enhance the non-linearities inherent in this device, enabling...

  8. Photonic synthesis of continuous‐wave millimeter‐wave signals using a passively mode‐locked laser diode and selective optical filtering

    DEFF Research Database (Denmark)

    Acedo, P.; Carpintero, G.; Criado, A.R.

    2012-01-01

    We report a photonic synthesis scheme for continuous wave millimeter‐wave signal generation using a single passively mode‐locked laser diode (PMLLD), optical filtering and photomixing in a fast photodiode.The phase noise of the photonically synthesized signals is evaluated and inherits...

  9. Demonstration of frequency control and CW diode laser injection control of a titanium-doped sapphire ring laser with no internal optical elements

    Science.gov (United States)

    Bair, Clayton H.; Brockman, Philip; Hess, Robert V.; Modlin, Edward A.

    1988-01-01

    Theoretical and experimental frequency narrowing studies of a Ti:sapphire ring laser with no intracavity optical elements are reported. Frequency narrowing has been achieved using a birefringent filter between a partially reflecting reverse wave suppressor mirror and the ring cavity output mirror. Results of CW diode laser injection seeding are reported.

  10. Influence of transmission bit rate on performance of optical fibre communication systems with direct modulation of laser diodes

    International Nuclear Information System (INIS)

    Ahmed, Moustafa F

    2009-01-01

    This paper reports on the influence of the transmission bit rate on the performance of optical fibre communication systems employing laser diodes subjected to high-speed direct modulation. The performance is evaluated in terms of the bit error rate (BER) and power penalty associated with increasing the transmission bit rate while keeping the transmission distance. The study is based on numerical analysis of the stochastic rate equations of the laser diode and takes into account noise mechanisms in the receiver. Correlation between BER and the Q-parameter of the received signal is presented. The relative contributions of the transmitter noise and the circuit and shot noises of the receiver to BER are quantified as functions of the transmission bit rate. The results show that the power penalty at BER = 10 -9 required to keep the transmission distance increases moderately with the increase in the bit rate near 1 Gbps and at high bias currents. In this regime, the shot noise is the main contributor to BER. At higher bit rates and lower bias currents, the power penalty increases remarkably, which comes mainly from laser noise induced by the pseudorandom bit-pattern effect.

  11. Electrical characterization of Au/quercetin/n-Si heterojunction diode and optical analysis of quercetin thin film

    Energy Technology Data Exchange (ETDEWEB)

    Tombak, Ahmet, E-mail: tahmet@yahoo.com [Department of Physics, Faculty of Art& Science, Batman University, Batman 72000 (Turkey); Özaydin, C. [Department of Computer Engineering, Faculty of Engineering and Architecture, Batman University, Batman 72000 (Turkey); Boğa, M. [Faculty of Pharmacy, Pharmaceutical Technology Department, Dicle University, Diyarbakir 21280 (Turkey); Kiliçoğlu, T. [Department of Physics, Faculty of Science, Dicle University, Diyarbakir 21280 (Turkey)

    2016-03-25

    Quercetin (3,5,7,3’,4’-pentahydroxyflavone, QE), one of the most widely distributed flavonoids in fruits and vegetables, has been reported to possess a wide variety of biological effects, including anti-oxidative, anti-inflammatory, anti-apoptosis, hepatoprotective, renoprotective and neuroprotective effects. In this study organic-inorganic junctions were fabricated by forming quercetin complex thin film using spin coating technique on n-Si and evaporating Au metal on the film. Optical properties of quercetin thin film were studied with the help of spectrophotometer. The current-voltage (I-V) characteristic of Au/quercetin/n-Si heterojunction diode was investigated at room temperature in dark. Some basic parameters of the diode such as ideality factor, rectification ratio, barrier height, series resistance and shunt resistance were calculated using dark current-voltage measurement. It was also seen that the device had good sensitivity to the light under 40-100 mW/cm{sup 2} illumination conditions.

  12. Simple and efficient method of spin-polarizing a metastable helium beam by diode laser optical pumping

    International Nuclear Information System (INIS)

    Granitza, B.; Salvietti, M.; Torello, E.; Mattera, L.; Sasso, A.

    1995-01-01

    Diode laser optical pumping to produce a highly spin-polarized metastable He beam to be used in a spin-polarized metastable atom deexcitation spectroscopy experiment on magnetized surfaces is described. Efficient pumping of the beam is performed by means of an SDL-6702 distributed Bragg reflector diode laser which yields 50 mW of output power in a single longitudinal mode at 1083 nm, the resonance wavelength for the 2 3 S→2 3 P 0,1,2 (D 0 , D 1 , and D 2 ) transitions of He*. The light is circularly polarized by a quarter-wave plate, allowing easy change of the sense of atomic polarization. The laser frequency can be locked to the atomic transition for several hours by phase-sensitive detection of the saturated absorption signal in a He discharge cell. Any of the three transitions of the triplet system can be pumped with the laser but the maximum level of atomic polarization of 98.5% is found pumping the D 2 line. copyright 1995 American Institute of Physics

  13. Ultralow-power on-chip all-optical Fano diode based on uncoupled nonlinear photonic-crystal nanocavities

    Science.gov (United States)

    Xie, Jingya; Hu, Xiaoyong; Wang, Feifan; Ao, Yutian; Gao, Wei; Yang, Hong; Gong, Qihuang

    2018-03-01

    We achieved an ultralow-power Fano-like diode in integrated photonic circuits through two cascaded and uncoupled photonic-crystal microcavities, coated with a nonlinear layer constructed from polycrystalline indium-tin oxide doped with gold nanoparticles. The multicomponent nanocomposite layer helps to obtain an extremely large nonlinearity enhancement on account of the quantum confinement effect, hot-electron injection, and local-field enhancement effect. Thus, the strong nonlinearity enhancement, asymmetric Fano-like spectrum lineshape, and asymmetric light confinement for the forward and backward incidence cases guarantee the nonreciprocal transmission of signal light. A compact size of 7 μm is maintained for the photonic-crystal microcavities and the transmission contrast reached 15 dB. Besides, we achieved 1.5 kW cm‑2 operating threshold intensity (cut down by a thousand times). This work assists chip-integrated optical computing on the basis of nonlinear photonic-crystal microcavities.

  14. Curved adjustable fibre-optic diode laser in microscopic cholesteatoma surgery: description of use and review of the relevant literature.

    Science.gov (United States)

    McCaffer, C J; Pabla, L; Watson, C

    2018-03-08

    The use of lasers in cholesteatoma surgery is common and well accepted. The most commonly used laser fibres are straight and non-adjustable; these have several limitations. This paper describes the use of an alternative laser fibre. This 'How I Do It' paper describes and illustrates the use of an alternative curved adjustable fibre-optic diode laser in microscopic cholesteatoma surgery. The curved, adjustable laser fibre allows accurate and atraumatic disease removal when the use of a straight laser fibre may be less effective or accurate. It reduces potential damage to delicate structures without the need for extra drilling or bone removal. It is suggested that the curved adjustable laser fibre is superior to the traditional straight fibre for cholesteatoma surgery.

  15. Optical absorption of carbon nanotube diodes: Strength of the electronic transitions and sensitivity to the electric field polarization

    Science.gov (United States)

    Mencarelli, Davide; Pierantoni, Luca; Rozzi, Tullio

    2008-03-01

    Aim of this work is to model electrostatically doped carbon nanotubes (CNT), which have recently proved to perform as ideal PN diodes, also showing photovoltaic properties. The new model is able to predict the optical absorption of semiconducting CNT as function of size and chirality. We justify theoretically, for the first time, the experimentally observed capability of CNTs to detect and select not only a well defined set of frequencies, as resulting from their discrete band structure, but also the polarization of the incident radiation. The analysis develops from an approach proposed in a recent contribution. The periodic structure of CNTs is formally modeled as a photonic crystal, that is characterized by means of numerical simulators. Longitudinal and transverse components of the electric field are shown to excite distinct interband transitions between well defined energy levels. Equivalently, for a given energy of the incident radiation, absorption may show polarization ratios strongly exceeding unity.

  16. Numerical analysis of the electrical and the optical properties of green phosphorescent organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hwang, Young Wook; Lee, Hyeon Gi; Won, Tae Young [Inha University, Incheon (Korea, Republic of)

    2014-05-15

    In this paper, we report a theoretical study on the electrical-optical properties of phosphorescent organic light-emitting diodes (PHOLEDs). Our simulation reveals that the refractive index of each material plays a crucial role in the emission characteristics and that the barrier height at the interface significantly influences the behavior of charge transport as well as the generation of excitons. The calculated transient profiles indicate that the carrier recombination in the PHOLEDs takes place mainly at the interface between the emitting layer and the hole transport layer after 8 μs. In the case of high index of refraction, the simulation result via modal analysis implies a possibility for improving the light extraction by increasing the substrate mode. As the thickness of each layer has been altered, we observe that the chromaticity of the device changes periodically.

  17. Effects of gamma radiation on superluminescent light emitting diodes (SLEDs) for fibre optic gyroscope applications

    Science.gov (United States)

    Occhi, L.; Rezzonico, R.; Vélez, C.; van Uffelen, M.; Berghmans, F.

    2017-11-01

    In this work we present a study on teh Super Luminescent LIght Emitting Diodes (SLEDs) performance under high doses of gamma radiation. We investigate GaAs SLEDs with emission wavelengths around 830 nm. The devices were exposed to ionising radiation at a dose rate of about 4.7 Gy/s, up to a cumulated dose of 10.1 MGy in the CMF facility of the Belgian nuclear research centre SCK•CEN. We measured the device characteristics before adn after irradiation. We show that the SLED performance is only marginally affected.

  18. Characteristics of III-nitride based laser diode employed for short range underwater wireless optical communications

    Science.gov (United States)

    Xue, Bin; Liu, Zhe; Yang, Jie; Feng, Liangsen; Zhang, Ning; Wang, Junxi; Li, Jinmin

    2018-03-01

    An off-the-shelf green laser diode (LD) was measured to investigate its temperature dependent characteristics. Performance of the device was severely restricted by rising temperature in terms of increasing threshold current and decreasing modulation bandwidth. The observation reveals that dynamic characteristics of the LD is sensitive to temperature. Influence of light attenuation on the modulation bandwidth of the green LD was also studied. The impact of light attenuation on the modulation bandwidth of the LD in short and low turbid water channel was not obvious while slight difference in modulation bandwidth under same injection level was observed between water channel and free space even at short range.

  19. Efficient high-energy pulse generation from a diode-side-pumped passively Q-switched Nd:YAG laser and application for optical parametric oscillator

    International Nuclear Information System (INIS)

    Huang, Y P; Huang, Y J; Cho, C Y

    2014-01-01

    We employ a convex–concave resonator to develop a high-pulse-energy diode-side-pumped passively Q-switched Nd:YAG laser with high extraction efficiency. At a diode pump energy of 227 mJ, the output laser pulse reaches 30 mJ with a pulse width of 6 ns at a repetition rate of 20 Hz. The optical-to-optical conversion efficiency is up to 13.2%. Based on the developed Nd:YAG laser oscillator, we further employ a monolithic KTP crystal to perform the optical parametric oscillator (OPO). With the 1064 nm input energy of 30 mJ, the OPO energy at 1573 nm is found to be 13.3 mJ, corresponding to an OPO conversion efficiency as high as 44.3%. (letters)

  20. Narrow optical linewidths and spin pumping on charge-tunable close-to-surface self-assembled quantum dots in an ultrathin diode

    Science.gov (United States)

    Löbl, Matthias C.; Söllner, Immo; Javadi, Alisa; Pregnolato, Tommaso; Schott, Rüdiger; Midolo, Leonardo; Kuhlmann, Andreas V.; Stobbe, Søren; Wieck, Andreas D.; Lodahl, Peter; Ludwig, Arne; Warburton, Richard J.

    2017-10-01

    We demonstrate full charge control, narrow optical linewidths, and optical spin pumping on single self-assembled InGaAs quantum dots embedded in a 162.5 -nm -thin diode structure. The quantum dots are just 88 nm from the top GaAs surface. We design and realize a p -i -n -i -n diode that allows single-electron charging of the quantum dots at close-to-zero applied bias. In operation, the current flow through the device is extremely small resulting in low noise. In resonance fluorescence, we measure optical linewidths below 2 μ eV , just a factor of 2 above the transform limit. Clear optical spin pumping is observed in a magnetic field of 0.5 T in the Faraday geometry. We present this design as ideal for securing the advantages of self-assembled quantum dots—highly coherent single-photon generation, ultrafast optical spin manipulation—in the thin diodes required in quantum nanophotonics and nanophononics applications.

  1. Standard practice for measurement of the glass dissolution rate using the single-pass flow-through test method

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2010-01-01

    1.1 This practice describes a single-pass flow-through (SPFT) test method that can be used to measure the dissolution rate of a homogeneous silicate glass, including nuclear waste glasses, in various test solutions at temperatures less than 100°C. Tests may be conducted under conditions in which the effects from dissolved species on the dissolution rate are minimized to measure the forward dissolution rate at specific values of temperature and pH, or to measure the dependence of the dissolution rate on the concentrations of various solute species. 1.2 Tests are conducted by pumping solutions in either a continuous or pulsed flow mode through a reaction cell that contains the test specimen. Tests must be conducted at several solution flow rates to evaluate the effect of the flow rate on the glass dissolution rate. 1.3 This practice excludes static test methods in which flow is simulated by manually removing solution from the reaction cell and replacing it with fresh solution. 1.4 Tests may be conducted wit...

  2. [Intestinal absorption of different combinations of active compounds from Gegenqinlian decoction by rat single pass intestinal perfusion in situ].

    Science.gov (United States)

    An, Rui; Zhang, Hua; Zhang, Yi-Zhu; Xu, Ran-Chi; Wang, Xin-Hong

    2012-12-01

    The aim is to study the intestinal absorption of different combinations of active compounds out of Gegenqinlian decoction. Rat single pass intestinal perfusion model with jugular vein cannulated was used. Samples were obtained continuously from the outlet perfusate and the mesenteric vein. The levels of puerarin, daidzin, liquilitin, baicalin, wogonoside, jatrorrhizine, berberine and palmatine were determined by LC-MS/MS and their permeability coefficients were calculated. The results showed that Glycyrrhiza could promote the absorption of the active ingredients in Pueraria which is the monarch herb; meanwhile, Pueraria also played a role in promoting the absorption of liquilitin. Based on the Gegenqinlian decoction and the different combinations experiments, the results concerning the absorption of baicalin and wogonoside were as follows. For baicalin, Pueraria and Glycyrrhiza could promote its absorption and the effect of Pueraria was more obvious. For wogonoside, Pueraria could also promote its absorption, while Glycyrrhiza played a opposite role. Pueraria and Glycyrrhiza both played a part in promoting the absorption of jateorhizine, berberine and palmatine, the effective compounds in Coptis.

  3. Absorption characteristics of the total alkaloids from Mahonia bealei in an in situ single-pass intestinal perfusion assay.

    Science.gov (United States)

    Sun, Yu-He; He, Xin; Yang, Xiao-Lin; Dong, Cui-Lan; Zhang, Chun-Feng; Song, Zi-Jing; Lu, Ming-Xing; Yang, Zhong-Lin; Li, Ping

    2014-07-01

    To investigate the absorption characteristics of the total alkaloids from Mahoniae Caulis (TAMC) through the administration of monterpene absorption enhancers or protein inhibitors. The absorption behavior was investigated in an in situ single-pass intestinal perfusion (SPIP) assay in rats. The intestinal absorption of TAMC was much more than that of a single compound or a mixture of compounds (jatrorrhizine, palmatine, and berberine). Promotion of absorption by the bicyclic monoterpenoids (borneol or camphor) was higher than by the monocyclic monoterpenes (menthol or menthone), and promotion by compounds with a hydroxyl group (borneol or menthol) was higher than those with a carbonyl group (camphor or menthone). The apparent permeability coefficient (Papp) of TAMC was increased to 1.8-fold by verapamil, while it was reduced to one half by thiamine. The absorption rate constant (Ka) and Papp of TAMC were unchanged by probenecid and pantoprazole. The intestinal absorption characteristics of TAMC might be passive transport, and the intestinum tenue was the best absorptive site. In addition, TAMC might be likely a substrate of P-glycoprotein (P-gp) and organic cation transporters (OCT), rather than multidrug resistance protein (MRP) and breast cancer resistance protein (BCRP). Compared with a single compound and a mixture of compounds, TAMC was able to be absorbed in the blood circulation effectively. Copyright © 2014 China Pharmaceutical University. Published by Elsevier B.V. All rights reserved.

  4. Sea ice local surface topography from single-pass satellite InSAR measurements: a feasibility study

    Directory of Open Access Journals (Sweden)

    W. Dierking

    2017-08-01

    Full Text Available Quantitative parameters characterizing the sea ice surface topography are needed in geophysical investigations such as studies on atmosphere–ice interactions or sea ice mechanics. Recently, the use of space-borne single-pass interferometric synthetic aperture radar (InSAR for retrieving the ice surface topography has attracted notice among geophysicists. In this paper the potential of InSAR measurements is examined for several satellite configurations and radar frequencies, considering statistics of heights and widths of ice ridges as well as possible magnitudes of ice drift. It is shown that, theoretically, surface height variations can be retrieved with relative errors  ≤  0.5 m. In practice, however, the sea ice drift and open water leads may contribute significantly to the measured interferometric phase. Another essential factor is the dependence of the achievable interferometric baseline on the satellite orbit configurations. Possibilities to assess the influence of different factors on the measurement accuracy are demonstrated: signal-to-noise ratio, presence of a snow layer, and the penetration depth into the ice. Practical examples of sea surface height retrievals from bistatic SAR images collected during the TanDEM-X Science Phase are presented.

  5. Single-Pass Percutaneous Liver Biopsy for Diffuse Liver Disease Using an Automated Device: Experience in 154 Procedures

    International Nuclear Information System (INIS)

    Rivera-Sanfeliz, Gerant; Kinney, Thomas B.; Rose, Steven C.; Agha, Ayad K.M.; Valji, Karim; Miller, Franklin J.; Roberts, Anne C.

    2005-01-01

    Purpose: To describe our experience with ultrasound (US)-guided percutaneous liver biopsies using the INRAD 18G Express core needle biopsy system.Methods: One hundred and fifty-four consecutive percutaneous core liver biopsy procedures were performed in 153 men in a single institution over 37 months. The medical charts, pathology reports, and radiology files were retrospectively reviewed. The number of needle passes, type of guidance, change in hematocrit level, and adequacy of specimens for histologic analysis were evaluated.Results: All biopsies were performed for histologic staging of chronic liver diseases. The majority of patients had hepatitis C (134/153, 90.2%). All patients were discharged to home after 4 hr of postprocedural observation. In 145 of 154 (94%) biopsies, a single needle pass was sufficient for diagnosis. US guidance was utilized in all but one of the procedures (153/154, 99.4%). The mean hematocrit decrease was 1.2% (44.1-42.9%). Pain requiring narcotic analgesia, the most frequent complication, occurred in 28 of 154 procedures (18.2%). No major complications occurred. The specimens were diagnostic in 152 of 154 procedures (98.7%).Conclusions: Single-pass percutaneous US-guided liver biopsy with the INRAD 18G Express core needle biopsy system is safe and provides definitive pathologic diagnosis of chronic liver disease. It can be performed on an outpatient basis. Routine post-biopsy monitoring of hematocrit level in stable, asymptomatic patients is probably not warranted

  6. Evaluation of the single-pass flow-through test to support a low-activity waste specification

    International Nuclear Information System (INIS)

    McGrail, B.P.; Peeler, D.K.

    1995-09-01

    A series of single-pass flow-through (SPFT) tests was performed on five reference low-activity waste glasses and a reference glass from the National Institute of Standards and Technology to support a product specification for low-activity waste (LAW) forms. The results showed that the SPFT test provides a means to quantitatively distinguish among LAW glass forms in terms of their forward reaction rate at a given temperature and solution pH. Two of the test glasses were also subjected to SPFT testing at Argonne National Laboratory (ANL). Forward reaction rate constants calculated from the ANL test data were 100 to over 1,000 times larger than the values obtained from the SPFT tests conducted at PNL. An analysis of the ANL results showed that they were inconsistent with independent measurements done on glasses of similar composition, the known pH-dependence of the forward rate, and with the results from low surface-area-to-volume, short duration product consistency tests. Because the data set obtained from the SPFT tests done at PNL was consistent with each of these same factors, a detailed examination of the test procedures used at both laboratories was performed to determine the cause(s) of the discrepancy. The omission of background subtraction in the data analysis procedure and the short-duration (on the order of hours) of the ANL tests are factors that may have significantly affected the calculated rates

  7. A 3D Reconstruction Strategy of Vehicle Outline Based on Single-Pass Single-Polarization CSAR Data.

    Science.gov (United States)

    Leping Chen; Daoxiang An; Xiaotao Huang; Zhimin Zhou

    2017-11-01

    In the last few years, interest in circular synthetic aperture radar (CSAR) acquisitions has arisen as a consequence of the potential achievement of 3D reconstructions over 360° azimuth angle variation. In real-world scenarios, full 3D reconstructions of arbitrary targets need multi-pass data, which makes the processing complex, money-consuming, and time expending. In this paper, we propose a processing strategy for the 3D reconstruction of vehicle, which can avoid using multi-pass data by introducing a priori information of vehicle's shape. Besides, the proposed strategy just needs the single-pass single-polarization CSAR data to perform vehicle's 3D reconstruction, which makes the processing much more economic and efficient. First, an analysis of the distribution of attributed scattering centers from vehicle facet model is presented. And the analysis results show that a smooth and continuous basic outline of vehicle could be extracted from the peak curve of a noncoherent processing image. Second, the 3D location of vehicle roofline is inferred from layover with empirical insets of the basic outline. At last, the basic line and roofline of the vehicle are used to estimate the vehicle's 3D information and constitute the vehicle's 3D outline. The simulated and measured data processing results prove the correctness and effectiveness of our proposed strategy.

  8. Optical bistability in side-mode injection locked dual-mode Fabry-Pérot laser diode

    Directory of Open Access Journals (Sweden)

    Jian Wei Wu

    2013-08-01

    Full Text Available In this paper, optical bistability characteristics are demonstrated experimentally based on a dual-mode laser system comprising a multi-mode Fabry-Pérot laser diode (MMFP-LD and a built-in feedback cavity formed by a fiber facet. The results show that two lasing modes with frequency separation of ∼0.58 THz and comparable peak powers can be achieved by judicious adjustment of the bias current and the operating temperature of the laser chip, which has a peak fluctuation of less than ∼1 dBm over a measurement period of one hour. A combination of appropriate external injection power and wavelength detuning can result in remarkable optical bistability in two oscillation modes, in which the resulting contrast ratio between the unlocked and locked states can be up to 30 dB, and the corresponding hysteresis loop width can be changed by controlling the side-mode injection power and the wavelength detuning.

  9. Structural, morphological, optical and electrical properties of Schottky diodes based on CBD deposited ZnO:Cu nanorods

    Science.gov (United States)

    Mwankemwa, Benard S.; Legodi, Matshisa J.; Mlambo, Mbuso; Nel, Jackie M.; Diale, Mmantsae

    2017-07-01

    Undoped and copper doped zinc oxide (ZnO) nanorods have been synthesized by a simple chemical bath deposition (CBD) method at a temperature of 90 °C. Structural, morphological, optical and electrical properties of the synthesized ZnO nanorods were found to be dependent on the Cu doping percentage. X-ray diffraction (XRD) patterns revealed strong diffraction peaks of hexagonal wurtzite of ZnO, and no impurity phases from metallic zinc or copper. Scanning electron microscopy (SEM) images showed changes in diameter and shape of nanorods, where by those doped with 2 at.% and 3 at.% aggregated and became compact. Selected area electron diffraction (SAED) patterns indicates high quality, single crystalline wurtzite structure ZnO and intensities of bright spots varied with copper doping concentration. UV-visible absorption peaks of ZnO red shifted with increasing copper doping concentration. Raman studies demonstrated among others, strong and sharp E2 (low) and E2 (high) optical phonon peaks confirming crystal structure of ZnO. Current-voltage measurements based on the gold/ZnO nanorods/ITO showed good rectifying behavior of the Schottky diode. The predicted Schottky barrier height of 0.60 eV was obtained which is not far from the theoretical Schottky-Mott value of 0.80 eV.

  10. Fabrication of Micro-Optics for Diode Lasers and Amplifiers Using Ink-Jet Technology

    National Research Council Canada - National Science Library

    Cox, W

    1997-01-01

    ...) and flexibility (data driven process). Using print heads capable of dispensing picoliter droplets of optical thermal plastic and UV-curing resin formulations at temperatures up to 230 deg C, both hemispherical and anamorphic plano/convex...

  11. Optical control of capacitance in a metal-insulator-semiconductor diode with embedded metal nanoparticles

    Science.gov (United States)

    Mikhelashvili, V.; Ankonina, G.; Kauffmann, Y.; Atiya, G.; Kaplan, W. D.; Padmanabhan, R.; Eisenstein, G.

    2017-06-01

    This paper describes a metal-insulator-semiconductor (MIS) capacitor with flat capacitance voltage characteristics and a small quadratic voltage capacitance coefficient. The device characteristics resemble a metal-insulator-metal diode except that here the capacitance depends on illumination and exhibits a strong frequency dispersion. The device incorporates Fe nanoparticles (NPs), mixed with SrF2, which are embedded in an insulator stack of SiO2 and HfO2. Positively charged Fe ions induce dipole type traps with an electronic polarization that is enhanced by photogenerated carriers injected from the substrate and/or by inter nanoparticle exchange of carriers. The obtained characteristics are compared with those of five other MIS structures: two based on Fe NPs, one with and the other without SrF2 sublayers. Additionally, devices contain Co NPs embedded in SrF2 sublayers, and finally, two structures have no NPs, with one based on a stack of SiO2 and HfO2 and the other which also includes SrF2. Only structures containing Fe NPs, which are incorporated into SrF2, yield a voltage independent capacitance, the level of which can be changed by illumination. These properties are essential in radio frequency/analog mixed signal applications.

  12. Balancing Radiation and Contrast Media Dose in Single-Pass Abdominal Multidetector CT: Prospective Evaluation of Image Quality.

    Science.gov (United States)

    Camera, Luigi; Romano, Federica; Liccardo, Immacolata; Liuzzi, Raffaele; Imbriaco, Massimo; Mainenti, Pier Paolo; Pizzuti, Laura Micol; Segreto, Sabrina; Maurea, Simone; Brunetti, Arturo

    2015-11-01

    As both contrast and radiation dose affect the quality of CT images, a constant image quality in abdominal contrast-enhanced multidetector computed tomography (CE-MDCT) could be obtained balancing radiation and contrast media dose according to the age of the patients. Seventy-two (38 Men; 34 women; aged 20-83 years) patients underwent a single-pass abdominal CE-MDCT. Patients were divided into three different age groups: A (20-44 years); B (45-65 years); and C (>65 years). For each group, a different noise index (NI) and contrast media dose (370 mgI/mL) was selected as follows: A (NI, 15; 2.5 mL/kg), B (NI, 12.5; 2 mL/kg), and C (NI, 10; 1.5 mL/kg). Radiation exposure was reported as dose-length product (DLP) in mGy × cm. For quantitative analysis, signal-to-noise (SNR) and contrast-to-noise (CNR) ratios were calculated for both the liver (L) and the abdominal aorta (A). Statistical analysis was performed with a one-way analysis of variance. Standard imaging criteria were used for qualitative analysis. Although peak hepatic enhancement was 152 ± 16, 128 ± 12, and 101 ± 14 Hounsfield units (P contrast media dose (mL) administered were 476 ± 147 and 155 ± 27 for group A, 926 ± 291 and 130 ± 16 for group B, and 1981 ± 451 and 106 ± 15 for group C, respectively (P contrast media dose administered to patients of different age. Copyright © 2015 AUR. Published by Elsevier Inc. All rights reserved.

  13. Single-pass Airborne InSAR for Wide-swath, High-Resolution Cryospheric Surface Topography Mapping

    Science.gov (United States)

    Moller, D.; Hensley, S.; Wu, X.; Muellerschoen, R.

    2014-12-01

    In May 2009 a mm-wave single-pass interferometric synthetic aperture radar (InSAR) for the first time demonstrated ice surface topography swath-mapping in Greenland. This was achieved with the airborne Glacier and Ice Surface Topography Interferometer (GLISTIN-A). Ka-band (35.6GHz) was chosen for high-precision topographic mapping from a compact sensor with minimal surface penetration. In recent years, the system was comprehensively upgraded for improved performance, stability and calibration. In April 2013, after completing the upgrades, GLISTIN-A flew a brief campaign to Alaska. The primary purpose was to demonstrate the InSAR's ability to generate high-precision, high resolution maps of ice surface topography with swaths in excess of 10km. Comparison of GLISTIN-A's elevations over glacial ice with lidar verified the precision requirements and established elevation accuracies to within 2 m without tie points. Feature tracking of crevasses on Columbia Glacier using data acquired with a 3-day separation exhibit an impressive velocity mapping capability. Furthermore, GLISTIN-A flew over the Beaufort sea to determine if we could not only map sea ice, but also measure freeboard. Initial analysis has established we can measure sea-ice freeboard using height differences from the top of the sea-ice and the sea surface in open leads. In the future, a campaign with lidar is desired for a quantitative validation. Another proof-of-concept collection mapped snow-basins for hydrology. Snow depth measurements using summer and winter collections in the Sierras were compared with lidar measurements. Unsurprisingly when present, trees complicate the interpretation, but additional filtering and processing is in work. For each application, knowledge of the interferometric penetration is important for scientific interpretation. We present analytical predictions and experimental data to upper bound the elevation bias of the InSAR measurements over snow and snow-covered ice.

  14. Single Pass Albumin Dialysis-A Dose-Finding Study to Define Optimal Albumin Concentration and Dialysate Flow.

    Science.gov (United States)

    Schmuck, Rosa Bianca; Nawrot, Gesa-Henrike; Fikatas, Panagiotis; Reutzel-Selke, Anja; Pratschke, Johann; Sauer, Igor Maximilian

    2017-02-01

    Several artificial liver support concepts have been evaluated both in vitro and clinically. Single pass albumin dialysis (SPAD) has shown to be one of the most simple approaches for removing albumin-bound toxins and water-soluble substances. Being faced with acute liver failure (ALF) in everyday practice encouraged our attempt to define the optimal conditions for SPAD more precisely in a standardized experimental setup. Albumin concentration was adjusted to either 1%, 2%, 3%, or 4%, while the flow rate of the dialysate was kept constant at a speed of 700 mL/h. The flow rate of the dialysate was altered between 350, 500, 700, and 1000 mL/h, whereas the albumin concentration was continuously kept at 3%. This study revealed that the detoxification of albumin-bound substances could be improved by increasing the concentration of albumin in the dialysate with an optimum at 3%. A further increase of the albumin concentration to 4% did not lead to a significant increase in detoxification. Furthermore, we observed a gradual increase of the detoxification efficiency for albumin-bound substances, from 350 mL/h to 700 mL/h (for bilirubin) or 1000 mL/h (for bile acids) of dialysate flow. Water-soluble toxins (ammonia, creatinine, urea, uric acid) were removed almost completely, regardless of albumin concentration or flow rate. In conclusion, this study confirmed that SPAD is effective in eliminating albumin-bound as well as water-soluble toxins using a simulation of ALF. Furthermore, this project was successful in evaluating the most effective combination of albumin concentration (3%) and dialysate flow (700 mL/h-1000 mL/h) in SPAD for the first time. © 2016 International Center for Artificial Organs and Transplantation and Wiley Periodicals, Inc.

  15. Double Pass 595?nm pulsed dye laser at a 6 minute interval for the treatment of port-wine stains is not more effective than single pass

    NARCIS (Netherlands)

    Peters, M. A. D.; van Drooge, A. M.; Wolkerstorfer, A.; van Gemert, M. J. C.; van der Veen, J. P. W.; Bos, J. D.; Beek, J. F.

    2012-01-01

    Background Pulsed dye laser (PDL) is the first choice for treatment of port wine stains (PWS). However, outcome is highly variable and only a few patients achieve complete clearance. The objective of the study was to compare efficacy and safety of single pass PDL with double pass PDL at a 6 minute

  16. Transverse mode tailoring in diode lasers based on coupled large optical cavities

    Science.gov (United States)

    Gordeev, N. Yu; Maximov, M. V.; E Zhukov, A.

    2017-08-01

    The key principles of transverse mode engineering in edge-emitting lasers with broadened waveguides based on coupled large optical cavity (CLOC) structures are presented. The CLOC laser design is shown to be an effective approach for reducing the optical loss, broadening the waveguide, and lowering the beam divergence. Having simulated the sensitivity of the CLOC design to variations in layer thicknesses and compositions we have shown its high robustness. Advanced versions of the CLOC laser structures having two extra passive waveguides have been treated and shown to effectively eliminate several transverse modes. We have considered an application of the CLOC concept for waveguides with shifted active regions aimed at reducing laser thermal and electric resistances.

  17. Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hamad, H.; Raynaud, C.; Bevilacqua, P.; Tournier, D.; Planson, D. [Ampère Laboratory - UMR 5005, 21, Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Vergne, B. [Franco-Allemand Institute of Saint-Louis ISL, 5, Rue du Général Cassagnou, 68300 Saint-Louis (France)

    2014-02-24

    Using a pulsed green laser with a wavelength of 532 nm, a duration pulse of ∼1 ns, and a mean power varying between 1 and 100 mW, induced photocurrents have been measured in 4H-SiC bipolar diodes. Considering the photon energy (2.33 eV) and the bandgap of 4H-SiC (3.2 eV), the generation of electron-hole pair by the conventional single photon absorption process should be negligible. The intensity of the measured photocurrents depends quadratically on the power beam intensity. This clearly shows that they are generated using two-photon absorption process. As in conventional OBIC (Optical Beam Induced Current), the measurements give an image of the electric field distribution in the structure under test, and the minority carrier lifetime can be extracted from the decrease of the photocurrent at the edge of the structure. The extracted minority carrier lifetime of 210 ns is consistent with results obtained in case of single photon absorption.

  18. Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

    International Nuclear Information System (INIS)

    Hamad, H.; Raynaud, C.; Bevilacqua, P.; Tournier, D.; Planson, D.; Vergne, B.

    2014-01-01

    Using a pulsed green laser with a wavelength of 532 nm, a duration pulse of ∼1 ns, and a mean power varying between 1 and 100 mW, induced photocurrents have been measured in 4H-SiC bipolar diodes. Considering the photon energy (2.33 eV) and the bandgap of 4H-SiC (3.2 eV), the generation of electron-hole pair by the conventional single photon absorption process should be negligible. The intensity of the measured photocurrents depends quadratically on the power beam intensity. This clearly shows that they are generated using two-photon absorption process. As in conventional OBIC (Optical Beam Induced Current), the measurements give an image of the electric field distribution in the structure under test, and the minority carrier lifetime can be extracted from the decrease of the photocurrent at the edge of the structure. The extracted minority carrier lifetime of 210 ns is consistent with results obtained in case of single photon absorption

  19. Study of atmospheric air AC glow discharge using optical emission spectroscopy and near infrared diode laser cavity ringdown spectroscopy

    Science.gov (United States)

    Srivastava, Nimisha; Wang, Chuji; Dibble, Theodore S.

    2008-11-01

    AC glow discharges were generated in atmospheric pressure by applying high voltage AC in the range of 3500-15000 V to a pair of stainless steel electrodes separated by an air gap. The discharges were characterized by optical emission spectroscopy (OES) and continuous wave cavity ringdown spectroscopy (cw-CRDS). The electronic (Tex), vibrational (Tv), and rotational (Tr) temperatures were measured. Spectral stimulations of the emission spectra of several vibronic bands of the 2^nd positive system of N2, the 1^st negative system of N2^+, the (0,1,2,3-0) bands of NO (A-X), and the (0-0) band of OH (A-X), which were obtained under various plasma operating conditions, show that Tr, Tv, and Tex are in the ranges of 2000 - 3800, 3500 - 5000, and 6000 - 10500^ K, respectively. Emission spectra show that OH concentration increases while NO concentration decreases with an increase of electrode spacing. The absorption spectra of H2O and OH overtone in the near infrared (NIR) were measured by the cw-CRDS with a telecommunications diode laser at wavelength near 1515 nm.

  20. Compressive sensing-based channel bandwidth improvement in optical wireless orthogonal frequency division multiplexing link using visible light emitting diode.

    Science.gov (United States)

    Won, Yong-Yuk; Yoon, Sang Min

    2014-08-25

    A new technique, which can compensate for the lack of channel bandwidth in an optical wireless orthogonal frequency division multiplexing (OFDM) link based on a light emitting diode (LED), is proposed. It uses an adaptive sampling and an inverse discrete cosine transform in order to convert an OFDM signal into a sparse waveform so that not only is the important data obtained efficiently but the redundancy one is removed. In compressive sensing (CS), a sparse signal that is sampled below the Nyquist/Shannon limit can be reconstructed successively with enough measurement. This means that the CS technique can increase the data rate of visible light communication (VLC) systems based on LEDs. It is observed that the data rate of the proposed CS-based VLC-OFDM link can be made 1.7 times greater than a conventional VLC-OFDM link (from 30.72 Mb/s to 51.2 Mb/s). We see that the error vector magnitude (EVM) of the quadrature phase shift keying (QPSK) symbol is 31% (FEC limit: EVM of 32%) at a compression ratio of 40%.

  1. Directly modulated green-light diode-pumped solid-state laser for underwater wireless optical communication.

    Science.gov (United States)

    Xu, Jing; Kong, Meiwei; Lin, Aobo; Song, Yuhang; Han, Jun; Xu, Zhiwei; Wu, Bo; Gao, Shiming; Deng, Ning

    2017-05-01

    It is widely known that a diode-pumped solid-state laser (DPSSL) has very limited modulation bandwidth. Recently, we directed our attention toward the opportunities for directly modulating a DPSSL to generate high-speed green-light signals, with high power and superior beam quality, which are highly desirable in underwater wireless optical communication. The constraint imposed by the limited modulation bandwidth of a DPSSL is circumvented with the strategy of orthogonal frequency-division multiplexing and power loading. With a compact DPSSL dismantled from a low-cost laser pointer, we achieve net bit rates of 108.55 Mb/s for the 64 quadrature amplitude modulation (QAM) signal at a bit error rate (BER) of 6.42×10-4 and 89.55 Mb/s for the 32 QAM signal at a BER of 4.81×10-4, respectively, over a 2 m underwater channel. When the underwater transmission distance is increased to 6 m, the BERs are still below the forward error correction (FEC) limit of 3.8×10-3.

  2. Optical gain in GaAsBi-based quantum-well diode lasers (Conference Presentation)

    Science.gov (United States)

    Marko, Igor P.; Broderick, Christopher A.; Jin, Shirong; Ludewig, Peter; Stolz, Wolfgang; Volz, Kerstin; Rorison, Judy M.; O'Reilly, Eoin P.; Sweeney, Stephen J.

    2017-02-01

    GaAsBi offers the possibility to develop near-IR semiconductor lasers such that the spin-orbit-split-off energy (ΔSO) is greater than the bandgap (Eg) in the active region with lasing wavelengths in the datacom/telecom range of 1.3-1.6 μm. This promises to suppress the dominant efficiency-limiting loss processes as Auger recombination, involving the generation of "hot" holes in the spin-orbit split-off band (the so-called "CHSH" process), and inter-valence band absorption (IVBA), where emitted photons are re-absorbed in the active region, thereby increasing the internal optical losses and negatively impacting upon the laser characteristics being responsible for the main energy consumption. In addition to growth and fabrication processes refinement, a key aspect of efforts to continue the advancement of the GaAsBi material system for laser applications is to develop a quantitative understanding of the impact of Bi on key device parameters. In this work, we present the first experimental measurements of the absorption, spontaneous emission, and optical gain spectra of GaAsBi/AlGaAs QW lasers using a segmented contact method and a theoretical analysis of these devices, which shows good quantitative agreement with the experiment. Internal optical losses of 10-15 cm-1 and peak modal gain of 24 cm-1 are measured at threshold and a peak material gain is estimated to be 1500 cm-1 at current density of 2 kA/cm-2, which agrees well with the calculated value of 1560 cm-1. The theoretical calculations also enabled us to identify and quantify Bi composition variations across the wafer and Bi-induced inhomogeneous broadening of the optical spectra.

  3. Strong doping of the n-optical confinement layer for increasing output power of high- power pulsed laser diodes in the eye safe wavelength range

    Science.gov (United States)

    Ryvkin, Boris S.; Avrutin, Eugene A.; Kostamovaara, Juha T.

    2017-12-01

    An analytical model for internal optical losses at high power in a 1.5 μm laser diode with strong n-doping in the n-side of the optical confinement layer is created. The model includes intervalence band absorption by holes supplied by both current flow and two-photon absorption (TPA), as well as the direct TPA effect. The resulting losses are compared with those in an identical structure with a weakly doped waveguide, and shown to be substantially lower, resulting in a significant improvement in the output power and efficiency in the structure with a strongly doped waveguide.

  4. Laser Diode Beam Basics, Manipulations and Characterizations

    CERN Document Server

    Sun, Haiyin

    2012-01-01

    Many optical design technical books are available for many years which mainly deal with image optics design based on geometric optics and using sequential raytracing technique. Some books slightly touched laser beam manipulation optics design. On the other hand many books on laser diodes have been published that extensively deal with laser diode physics with little touching on laser diode beam manipulations and characterizations. There are some internet resources dealing with laser diode beams. However, these internet resources have not covered enough materials with enough details on laser diode beam manipulations and characterizations. A technical book concentrated on laser diode beam manipulations and characterizations can fit in to the open and provide useful information to laser diode users. Laser Diode Beam Basics, Manipulations and  Characterizations is concentrated on the very practical side of the subject, it only discusses the basic physics and mathematics that are necessary for the readers in order...

  5. Electrical and optical characteristics of n-Zno/p-GaN hetero-junction diode fabricated by ultra-high vacuum sputter.

    Science.gov (United States)

    Cho, Seong Gook; Lee, Dong Uk; Kim, Eun Kyu

    2013-09-01

    We investigated the electrical and optical properties of n-ZnO/p-GaN hetero-junction diode fabricated by an ultra-high vacuum radio frequency magnetron sputter. A physical relationship between the rotation rate during deposition process and post annealing conditions after deposited ZnO layer on p-GaN layer was discussed. When the rotation rates during deposition process of n-ZnO layer were 5 rpm and 15 rpm, the full width at half maximum of photoluminescence spectra of ZnO layer on the p-GaN layer was about 106 and 133 meV, respectively. Also, the ratio of deep level emission to near band edge emission was dramatically increased as increasing the rotation rate from 5 to 15 rpm. The n-ZnO/p-GaN hetero-junction diode grown at 5 rpm has a higher ratio of forward to reverse currents than the diode grown at 15 rpm. Also, the 600 degrees C-annealed diodes with 5 rpm showed good rectifying behavior with the barrier height of 0.74 eV, the ideality factor of 12.2, and the forward to reverse current ratio of 614 at +/- 8 V.

  6. Two-field description of chaos synchronization in diode lasers with incoherent optical feedback and injection

    International Nuclear Information System (INIS)

    Sukow, David W.; Baracco, Michael J.; Parmenter, Zachary A.; Blackburn, Karen L.; Gavrielides, Athanasios; Erneux, Thomas

    2005-01-01

    Synchronized chaotic dynamics are investigated theoretically and experimentally in a system of unidirectionally-coupled semiconductor lasers subject to delayed, polarization-rotated optical feedback and injection. Experimental data in the time and frequency domains demonstrate chaos synchronization with a lag between transmitter and receiver equal to the injection time, also known as driving synchronization. The natural polarization mode of the transmitter is shown to synchronize most efficiently to the orthogonal state of the receiver which is being injected. A full two-polarization model is used for both lasers, and is in good agreement with polarization-resolved experimental measurements

  7. Beam shaping for multicolour light-emitting diodes with diffractive optical elements

    KAUST Repository

    Yu, Chao

    2016-10-06

    An improved particle swarm optimization method is proposed for the design of ultra-thin diffractive optical elements (DOEs) enabling multicolour beam shaping functionality. We employ pre-optimized initial structures and adaptive weight strategy in the algorithm to achieve better and identical shaping performance for multiple colours. Accordingly, a DOE for shaping light from green and blue LEDs has been designed and fabricated. Both experiment and numerical simulations have been conducted and the results agree well with each other. 15.66% average root mean square error (RMSE) and 0.22% RMSE difference are achieved. In addition, the parameters closely related to the performance of the optimization are analysed, which can provide insights for future application designs.

  8. Characterization of an Optical Device with an Array of Blue Light Emitting Diodes LEDS for Treatment of Neonatal Jaundice.

    Science.gov (United States)

    Sebbe, Priscilla Fróes; Villaverde, Antonio G. J. Balbin; Nicolau, Renata Amadei; Barbosa, Ana Maria; Veissid, Nelson

    2008-04-01

    Phototherapy is a treatment that consists in irradiating a patient with light of high intensity, which promotes beneficial photochemical transformations in the irradiated area. The phototherapy for neonates is applied to break down the bilirubin, an organic pigment that is a sub product of the erythrocytes degradation, and to increase its excretion by the organism. Neonates should be irradiated with light of wavelength that the bilirubin can absorb, and with spectral irradiances between 4 and 16 μW/cm2/nm. The efficiency of the treatment depends on the irradiance and the area of the body that is irradiated. A convenient source of light for treatment of neonatal jaundice is the blue Light Emitter Diode (LED), emitting in the range of 400 to 500 nm, with power of the order of 10-150 mW. Some of the advantages for using LEDS are: low cost, operating long lifetime (over 100,000 hours), narrow emission linewith, low voltage power supply requirement and low heating. The aim of this work was to build and characterize a device for phototherapy treatment of neonatal jaundice. This consists of a blanket with 88 blue LEDs (emission peak at 472 nm), arranged in an 8×11 matrix, all connected in parallel and powered by a 5V-2A power supply. The device was characterized by using a spectroradiometer USB2000 (Ocean Optics Inc, USA), with a sensitivity range of 339-1019 nm. For determination of light spatial uniformity was used a calibrated photovoltaic sensor for measuring light intensity and mapping of the light intensity spatial distribution. Results indicate that our device shows a uniform spatial distribution for distances from the blanket larger than 10 cm, with a maximum of irradiance at such a distance. This device presenting a large and uniform area of irradiation, efficient wavelength emission and high irradiance seems to be promising for neonates' phototherapy treatment.

  9. Dependence of plasma treatment of ITO electrode films on electrical and optical properties of polymer light-emitting diodes

    International Nuclear Information System (INIS)

    Kim, Seung Ho; Baek, Seung Jun; Chang, Ho Jung; Chang, Young Chul

    2012-01-01

    Polymer light-emitting diodes (PLEDs) having indium tin oxide (ITO)/PEDOT:PSS [poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate]/PVK [poly-vinylcarbazole]:PFO-poss [poly(9,9-dioctylfluorene) end capped by polyhedral oligomeric silsesquioxane]/TPBI [2,2',2''-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)]/LiF/Al structures were prepared on plasma-treated ITO/glass substrates using spin-coating and thermal evaporation methods. The effects of the plasma treatment on the ITO films to the optical and electrical properties of the PLEDs were examined. The sheet resistance of the ITO films decreased with an increasing radio frequency (RF) plasma intensity from 20 to 200 W under a 20 mTorr Ar + O 2 gas (50:50 vol.%) pressure. The work function of the ITO films without plasma treatment was 4.97 eV, and increased to about 5.16-5.23 eV after the plasma treatment of the films. The surface roughness improved with increasing plasma intensities. The luminance and current efficiency of the PLEDs were improved when the devices were prepared on the plasma-treated ITO/glass substrates. The maximum current density and luminance for the PLEDs was obtained at a 150-W RF plasma intensity; they were 310 mA cm -2 and 2535 cd m -2 at 9 V, respectively. The Commission Internationale d'Eclairage (CIE) color coordinates were found to be x, y = 0.17, 0.06-0.07, showing a good blue color. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Atrial electrogram quality in single-pass defibrillator leads with floating atrial bipole in patients with permanent atrial fibrillation and cardiac resynchronization therapy.

    Science.gov (United States)

    Sticherling, Christian; Müller, Dirk; Schaer, Beat A; Krüger, Silke; Kolb, Christof

    2018-03-27

    Many patients receiving cardiac resynchronization therapy (CRT) suffer from permanent atrial fibrillation (AF). Knowledge of the atrial rhythm is important to direct pharmacological or interventional treatment as well as maintaining AV-synchronous biventricular pacing if sinus rhythm can be restored. A single pass single-coil defibrillator lead with a floating atrial bipole has been shown to obtain reliable information about the atrial rhythm but has never been employed in a CRT-system. The purpose of this study was to assess the feasibility of implanting a single coil right ventricular ICD lead with a floating atrial bipole and the signal quality of atrial electrograms (AEGM) in CRT-defibrillator recipients with permanent AF. Seventeen patients (16 males, mean age 73 ± 6 years, mean EF 25 ± 5%) with permanent AF and an indication for CRT-defibrillator placement were implanted with a designated CRT-D system comprising a single pass defibrillator lead with a atrial floating bipole. They were followed-up for 103 ± 22 days using remote monitoring for AEGM transmission. All patients had at last one AEGM suitable for atrial rhythm diagnosis and of 100 AEGM 99% were suitable for visual atrial rhythm assessment. Four patients were discharged in sinus rhythm and one reverted to AF during follow-up. Atrial electrograms retrieved from a single-pass defibrillator lead with a floating atrial bipole can be reliably used for atrial rhythm diagnosis in CRT recipients with permanent AF. Hence, a single pass ventricular defibrillator lead with a floating bipole can be considered in this population. Copyright © 2018 Indian Heart Rhythm Society. Production and hosting by Elsevier B.V. All rights reserved.

  11. Nanoscale effects on the thermal and mechanical properties of AlGaAs/GaAs quantum well laser diodes: influence on the catastrophic optical damage

    Science.gov (United States)

    Souto, Jorge; Pura, José Luis; Jiménez, Juan

    2017-06-01

    In this work we study the catastrophic optical damage (COD) of graded-index separate confinement heterostructure quantum well (QW) laser diodes based on AlGaAs/GaAs. The emphasis is placed on the impact that the nanoscale physical properties have on the operation and degradation of the active layers of these devices. When these laser diodes run in continuous-wave mode with high internal optical power densities, the QW and guide layers can experiment very intense local heating phenomena that lead to device failure. A thermo-mechanical model has been set up to study the mechanism of degradation. This model has been solved by applying finite element methods. A variety of physical factors related to the materials properties, which play a paramount role in the laser degradation process, have been considered. Among these, the reduced thicknesses of the QW and the guides lead to thermal conductivities smaller than the bulk figures, which are further reduced as extended defects develop in these layers. This results in a progressively deteriorating thermal management in the device. To the best of our knowledge, this model for laser diodes is the first one to have taken into account low scale mechanical effects that result in enhanced strengths in the structural layers. Moreover, the consequences of these conflicting size-dependent properties on the thermo-mechanical behaviour on the route to COD are examined. Subsequently, this approach opens the possibility of taking advantage of these properties in order to design robust diode lasers (or other types of power devices) in a controlled manner.

  12. Optical mode engineering and high power density per facet length (>8.4 kW/cm) in tilted wave laser diodes

    Science.gov (United States)

    Ledentsov, N. N.; Shchukin, V. A.; Maximov, M. V.; Gordeev, N. Y.; Kaluzhniy, N. A.; Mintairov, S. A.; Payusov, A. S.; Shernyakov, Yu. M.

    2016-03-01

    Tilted Wave Lasers (TWLs) based on optically coupled thin active waveguide and thick passive waveguide offer an ultimate solution for thick-waveguide diode laser, preventing catastrophic optical mirror damage and thermal smile in laser bars, providing robust operation in external cavity modules thus enabling wavelength division multiplexing and further increase in brightness enabling direct applications of laser diodes in the mainstream material processing. We show that by proper engineering of the waveguide one can realize high performance laser diodes at different tilt angles of the vertical lobes. Two vertical lobes directed at various angles (namely, +/-27° or +/-9°) to the junction plane are experimentally realized by adjusting the compositions and the thicknesses of the active and the passive waveguide sections. The vertical far field of a TWL with the two +/-9° vertical beams allows above 95% of all the power to be concentrated within a vertical angle below 25°, the fact which is important for laser stack applications using conventional optical coupling schemes. The full width at half maximum of each beam of the value of 1.7° evidences diffraction- limited operation. The broad area (50 μm) TWL chips at the cavity length of 1.5 mm reveal a high differential efficiency ~90% and a current-source limited pulsed power >42W for as-cleaved TWL device. Thus the power per facet length in a laser bar in excess of 8.4 kW/cm can be realized. Further, an ultimate solution for the smallest tilt angle is that where the two vertical lobes merge forming a single lobe directed at the zero angle is proposed.

  13. A compact spin-exchange optical pumping system for 3He polarization based on a solenoid coil, a VBG laser diode, and a cosine theta RF coil

    Science.gov (United States)

    Lee, Sungman; Kim, Jongyul; Moon, Myung Kook; Lee, Kye Hong; Lee, Seung Wook; Ino, Takashi; Skoy, Vadim R.; Lee, Manwoo; Kim, Guinyun

    2013-02-01

    For use as a neutron spin polarizer or analyzer in the neutron beam lines of the HANARO (High-flux Advanced Neutron Application ReactOr) nuclear research reactor, a 3He polarizer was designed based on both a compact solenoid coil and a VBG (volume Bragg grating) diode laser with a narrow spectral linewidth of 25 GHz. The nuclear magnetic resonance (NMR) signal was measured and analyzed using both a built-in cosine radio-frequency (RF) coil and a pick-up coil. Using a neutron transmission measurement, we estimated the polarization ratio of the 3He cell as 18% for an optical pumping time of 8 hours.

  14. Phosphorescent Platinum(II) and Palladium(II) Complexes with Azatetrabenzoporphyrins—New Red Laser Diode-Compatible Indicators for Optical Oxygen Sensing

    Science.gov (United States)

    2010-01-01

    A new class of oxygen indicators is described. Platinum(II) and palladium(II) complexes of azatetrabenzoporphyrins occupy an intermediate position between tetrabenzoporphyrins and phthalocyanines and combine features of both. The new dyes are excitable in the red part of the spectrum and possess strong room-temperature NIR phosphorescence. Other features include excellent spectral compatibility with the red laser diodes and 632.8 nm line of He−Ne laser, excellent photostability, and significantly shorter decay times than for the respective meso-tetraphenyltetrabenzoporphyrins. Applicability of the complexes for optical oxygen sensing is demonstrated. PMID:20186289

  15. Organic Light-Emitting Diodes (OLEDs) and Optically-Detected Magnetic Resonance (ODMR) studies on organic materials

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Min [Iowa State Univ., Ames, IA (United States)

    2011-01-01

    Organic semiconductors have evolved rapidly over the last decades and currently are considered as the next-generation technology for many applications, such as organic light-emitting diodes (OLEDs) in flat-panel displays (FPDs) and solid state lighting (SSL), and organic solar cells (OSCs) in clean renewable energy. This dissertation focuses mainly on OLEDs. Although the commercialization of the OLED technology in FPDs is growing and appears to be just around the corner for SSL, there are still several key issues that need to be addressed: (1) the cost of OLEDs is very high, largely due to the costly current manufacturing process; (2) the efficiency of OLEDs needs to be improved. This is vital to the success of OLEDs in the FPD and SSL industries; (3) the lifetime of OLEDs, especially blue OLEDs, is the biggest technical challenge. All these issues raise the demand for new organic materials, new device structures, and continued lower-cost fabrication methods. In an attempt to address these issues, we used solution-processing methods to fabricate highly efficient small molecule OLEDs (SMOLEDs); this approach is costeffective in comparison to the more common thermal vacuum evaporation. We also successfully made efficient indium tin oxide (ITO)-free SMOLEDs to further improve the efficiency of the OLEDs. We employed the spin-dependent optically-detected magnetic resonance (ODMR) technique to study the luminescence quenching processes in OLEDs and organic materials in order to understand the intrinsic degradation mechanisms. We also fabricated polymer LEDs (PLEDs) based on a new electron-accepting blue-emitting polymer and studied the effect of molecular weight on the efficiency of PLEDs. All these studies helped us to better understand the underlying relationship between the organic semiconductor materials and the OLEDs’ performance, and will subsequently assist in further enhancing the efficiency of OLEDs. With strongly improved device performance (in addition to

  16. Theoretical simulations of protective thin film Fabry-Pérot filters for integrated optical elements of diode pumped alkali lasers (DPAL

    Directory of Open Access Journals (Sweden)

    L. Quarrie

    2014-09-01

    Full Text Available The lifetime of Diode-Pumped Alkali Lasers (DPALs is limited by damage initiated by reaction of the glass envelope of its gain medium with rubidium vapor. Rubidium is absorbed into the glass and the rubidium cations diffuse through the glass structure, breaking bridging Si-O bonds. A damage-resistant thin film was developed enhancing high-optical transmission at natural rubidium resonance input and output laser beam wavelengths of 780 nm and 795 nm, while protecting the optical windows of the gain cell in a DPAL. The methodology developed here can be readily modified for simulation of expected transmission performance at input pump and output laser wavelengths using different combination of thin film materials in a DPAL. High coupling efficiency of the light through the gas cell was accomplished by matching the air-glass and glass-gas interfaces at the appropriate wavelengths using a dielectric stack of high and low index of refraction materials selected to work at the laser energies and protected from the alkali metal vapor in the gain cell. Thin films as oxides of aluminum, zirconium, tantalum, and silicon were selected allowing the creation of Fabry-Perot optical filters on the optical windows achieving close to 100% laser transmission in a solid optic combination of window and highly reflective mirror. This approach allows for the development of a new whole solid optic laser.

  17. Absorption Properties of Luteolin and Apigenin in Genkwa Flos Using In Situ Single-Pass Intestinal Perfusion System in the Rat.

    Science.gov (United States)

    He, Xin; Song, Zi-Jing; Jiang, Cui-Ping; Zhang, Chun-Feng

    2017-01-01

    The flower bud of Daphne genkwa (Genkwa Flos) is a commonly used herbal medicine in Asian countries. Luteolin and apigenin are two recognized active flavonoids in Genkwa Flos. The aim of this study was to investigate the intestinal absorption mechanisms of Genkwa Flos flavonoids using in situ single-pass intestinal perfusion rat model. Using HPLC, we determined its major effective flavonoids luteolin, apigenin, as well as, hydroxygenkwanin and genkwanin in biological samples. The intestinal absorption mechanisms of the total flavonoids in Genkwa Flos (TFG) were investigated using in situ single-pass intestinal perfusion rat model. Comparing the TFG absorption rate in different intestinal segments, data showed that the small intestine absorption was significantly higher than that of the colon ([Formula: see text]). Compared with duodenum and ileum, the jejunum was the best small intestinal site for TFG absorption. The high TFG concentration (61.48[Formula: see text][Formula: see text]g/ml) yielded the highest permeability ([Formula: see text]). Subsequently, three membrane protein inhibitors (verapamil, pantoprazole and probenecid) were used to explore the TFG absorption pathways. Data showed probenecid, a multidrug resistance protein (or MRP) inhibitor, effectively enhanced the TFG absorption ([Formula: see text]). Furthermore, by comparing commonly used natural absorption enhancers on TFG, it was observed that camphor was the most effective. In Situ single-pass intestinal perfusion experiment shows that TFG absorption is much higher in the small intestine than in the colon, and the TFG is absorbed mainly via an active transport pathway with MRP-mediated efflux mechanism. Camphor obviously enhanced the TFG absorption, and this could be an effective TFG formulation preparation method to increase clinical effectiveness after Genkwa Flos administration. Our study elucidated the TFG absorption mechanisms, and provided new information for its formulation preparation.

  18. Single-pass waveguide amplifiers in Er-Yb doped zinc polyphosphate glass fabricated with femtosecond laser pulses.

    Science.gov (United States)

    Fletcher, Luke B; Witcher, Jon J; Troy, Neil; Brow, Richard K; Krol, Denise M

    2012-04-01

    We have investigated the direct fabrication of subsurface waveguide amplifiers in Er-Yb zinc polyphosphate glass by utilizing the relationship between the initial glass composition and the resulting changes to the network structure after modification by fs laser pulses. Waveguides, exhibiting internal gain of 1 dB/cm at 1.53 μm when pumped with 500 mW at 976 nm, were directly fabricated using a regenerative amplified Ti:sapphire 1 kHz, 180 fs laser system. Optical properties as well as insertion losses and internal gain are reported.

  19. Optical sensing system based on wireless paired emitter detector diode device and ionogels for lab-on-a-disc water quality analysis.

    Science.gov (United States)

    Czugala, Monika; Gorkin, Robert; Phelan, Thomas; Gaughran, Jennifer; Curto, Vincenzo Fabio; Ducrée, Jens; Diamond, Dermot; Benito-Lopez, Fernando

    2012-12-07

    This work describes the first use of a wireless paired emitter detector diode device (PEDD) as an optical sensor for water quality monitoring in a lab-on-a-disc device. The microfluidic platform, based on an ionogel sensing area combined with a low-cost optical sensor, is applied for quantitative pH and qualitative turbidity monitoring of water samples at point-of-need. The autonomous capabilities of the PEDD system, combined with the portability and wireless communication of the full device, provide the flexibility needed for on-site water testing. Water samples from local fresh and brackish sources were successfully analysed using the device, showing very good correlation with standard bench-top systems.

  20. 26 m/5.5 Gbps air-water optical wireless communication based on an OFDM-modulated 520-nm laser diode.

    Science.gov (United States)

    Chen, Yifei; Kong, Meiwei; Ali, Tariq; Wang, Jiongliang; Sarwar, Rohail; Han, Jun; Guo, Chaoyang; Sun, Bing; Deng, Ning; Xu, Jing

    2017-06-26

    We experimentally demonstrate a high-speed air-water optical wireless communication system with both downlink and uplink transmission employing 32-quadrature amplitude modulation (QAM) orthogonal frequency division multiplexing (OFDM) and a single-mode pigtailed green-light laser diode (LD). This work is an important step towards the future study on optical wireless communications between underwater platforms and airborne terminals. Over a 5-m air channel and a 21-m water channel, we achieve a 5.3-Gbps transmission without power loading (PL) and a 5.5-Gbps transmission with PL in the downlink. The corresponding bit error rates (BERs) are 2.64×10 -3 and 2.47×10 -3 , respectively, which are below the forward error correction (FEC) criterion. A data rate of 5.5 Gbps with PL at a BER of 2.92×10 -3 is also achieved in the uplink.

  1. Note: design and characterization of an optical light source based on mixture of white and near-ultraviolet light emitting diode spectra.

    Science.gov (United States)

    Sametoglu, Ferhat; Celikel, Oguz

    2011-04-01

    An optical light source based on a solid-state lighting technology is designed. Main components of the light source are a phosphor-converted white and a near-ultraviolet (near-UV) light emitting diodes (LEDs), the spectral power distributions (SPDs) of which are mixed using a fiber optic combiner. The near-UV LED is used for improving insufficient SPDs of the white LED at shorter wavelengths of the visible radiation. Stable direct current power supplies are also designed and used to operate each of the LED separately. Three steps of the driving current can be selected by means of serial resistors altered with a commutator at nominal current values of ∼40%, ∼50%, and ∼69%. The light source can be used for many characteristic measurements within the scope of photometry and colorimetry. © 2011 American Institute of Physics

  2. Silicon MIS diodes with Cr{sub 2}O{sub 3} nanofilm: Optical, morphological/structural and electronic transport properties

    Energy Technology Data Exchange (ETDEWEB)

    Erdogan, Ibrahim Y. [Bingoel University, Faculty of Sciences and Arts, Department of Chemistry, 12000- Bingoel (Turkey); Guellue, O., E-mail: omergullu@gmail.com [Batman University, Faculty of Sciences and Arts, Department of Physics, 72060- Batman (Turkey)

    2010-04-15

    In this work we report the optical, morphological and structural characterization and diode application of Cr{sub 2}O{sub 3} nanofilms grown on p-Si substrates by spin coating and annealing process. X-ray diffraction (XRD), non-contact mode atomic force microscopy (NC-AFM), ultraviolet-visible (UV-vis) spectroscopy and photoluminescence (PL) spectroscopy were used for characterization of nanofilms. For Cr{sub 2}O{sub 3} nanofilms, the average particle size determined from XRD and NC-AFM measurements was approximately 70 nm. Structure analyses of nanofilms demonstrate that the single phase Cr{sub 2}O{sub 3} on silicon substrate is of high a crystalline structure with a dominant in hexagonal (1 1 0) orientation. The morphologic analysis of the films indicates that the films formed from hexagonal nanoparticles are with low roughness and uniform. UV-vis absorption measurements indicate that the band gap of the Cr{sub 2}O{sub 3} film is 3.08 eV. The PL measurement shows that the Cr{sub 2}O{sub 3} nanofilm has a strong and narrow ultraviolet emission, which facilitates potential applications in future photoelectric nanodevices. Au/Cr{sub 2}O{sub 3}/p-Si metal/interlayer/semiconductor (MIS) diodes were fabricated for investigation of the electronic properties such as current-voltage and capacitance-voltage. Ideality factor and barrier height for Au//Cr{sub 2}O{sub 3}/p-Si diode were calculated as 2.15 eV and 0.74 eV, respectively. Also, interfacial state properties of the MIS diode were determined. The interface-state density of the MIS diode was found to vary from 2.90 x 10{sup 13} eV{sup -1} cm{sup -2} to 8.45 x 10{sup 12} eV{sup -1} cm{sup -2}.

  3. A Unified Algorithm for Channel Imbalance and Antenna Phase Center Position Calibration of a Single-Pass Multi-Baseline TomoSAR System

    Directory of Open Access Journals (Sweden)

    Yuncheng Bu

    2018-03-01

    Full Text Available The multi-baseline synthetic aperture radar (SAR tomography (TomoSAR system is employed in such applications as disaster remote sensing, urban 3-D reconstruction, and forest carbon storage estimation. This is because of its 3-D imaging capability in a single-pass platform. However, a high 3-D resolution of TomoSAR is based on the premise that the channel imbalance and antenna phase center (APC position are precisely known. If this is not the case, the 3-D resolution performance will be seriously degraded. In this paper, a unified algorithm for channel imbalance and APC position calibration of a single-pass multi-baseline TomoSAR system is proposed. Based on the maximum likelihood method, as well as the least squares and the damped Newton method, we can calibrate the channel imbalance and APC position. The algorithm is suitable for near-field conditions, and no phase unwrapping operation is required. The effectiveness of the proposed algorithm has been verified by simulation and experimental results.

  4. Investigating drug absorption from the colon: Single-pass vs. Doluisio approaches to in-situ rat large-intestinal perfusion.

    Science.gov (United States)

    Lozoya-Agullo, Isabel; Zur, Moran; Fine-Shamir, Noa; Markovic, Milica; Cohen, Yael; Porat, Daniel; González-Álvarez, Isabel; González-Álvarez, Marta; Merino-Sanjuán, Matilde; Bermejo, Marival; Dahan, Arik

    2017-07-15

    Traditionally, the colon is considered a secondary intestinal segment in the drug absorption process. However, in many cases the role of colonic drug permeability cannot be overlooked. The purpose of this research was to compare colon permeability data obtained using two different rat perfusion methods the single-pass intestinal perfusion (SPIP) approach and the closed-loop (Doluisio) perfusion model. A list of 14 structurally diverse model drugs was constructed, and their rat colon permeability was studied using the two methods. The two sets of results were compared to each other, and were evaluated vs. in-vitro, ex-vivo, and in-vivo literature values. The SPIP and the Doluisio results exhibited good correlation between them (R 2 =0.81). The best correlation of both sets was obtained with transport studies across Caco-2 monolayers (R 2 ∼0.9), as well as the sigmoidal fit vs. human fraction of dose absorbed (F abs ) data. On the other hand, Ussing chambers data, as well as lipophilicity (Log P) data, resulted in weak correlation to the in-situ results. In conclusion, the single-pass intestinal perfusion (SPIP) and the Doluisio (closed-loop) perfusion models were found to be equally convenient and useful for obtaining validated colon permeability values, although more human colonic F abs data are needed for a better understanding of colonic drug permeability and absorption. Copyright © 2017 Elsevier B.V. All rights reserved.

  5. Regional brain blood flow in mouse: quantitative measurement using a single-pass radio-tracer method and a mathematical algorithm.

    Science.gov (United States)

    Xu, K; Radhakrishnan, K; Serhal, A; Allen, F; Lamanna, J C; Puchowicz, M A

    2011-01-01

    We have developed a reliable experimental method for measuring local regional cerebral blood flows in anesthetized mice. This method is an extension of the well-established single-pass dual-label indicator method for simultaneously measuring blood flow and glucose influx in rat brains. C57BL6J mice (n = 10) were anesthetized and regional blood flows (ml/min/g) were measured using the radio-tracer method. To test the sensitivity of this method we used a mathematical algorithm to predict the blood flows and compared the two sets of results.Measured regional blood flows between 0.7 and 1.7 ml/min/g were similar to those we have previously reported in the rat. The predicted blood flows using an assumed linearly increasing arterial tracer concentration-versus-time profile (that is, a ramp) were similar to the values measured in the physiological experiments (R(2) 0.99; slope 0.91). Thus,measurements of local regional cerebral blood flow in anesthetized mice using a single-pass radio-tracer method appear to be reliable.

  6. Application of an all-solid-state diode-laser-based sensor for carbon monoxide detection by optical absorption in the 4.4--4.8 mum spectral region

    Science.gov (United States)

    Barron Jimenez, Rodolfo

    An all-solid-state continuous-wave (cw) laser system for mid-infrared absorption measurements of the carbon monoxide (CO) molecule has been developed and demonstrated. The single-mode, tunable output of an external-cavity diode laser (ECDL) is difference-frequency mixed (DFM) with the output of a 550-mW diode-pumped cw Nd:YAG laser in a periodically-poled lithium niobate (PPLN) crystal to produce tunable cw radiation in the mid-infrared. The wavelength of the 860-nm ECDL can be coarse tuned between 860.78 to 872.82 nm allowing the sensor to be operated in the 4.4--4.8 mum region. Results from single-pass mid-IR direct absorption experiments for CO concentration measurements are discussed. CO measurements were performed in CO/CO2/N 2 mixtures in a room temperature gas cell that allowed the evaluation of the sensor operation and data reduction procedures. Field testing was performed at two locations: in the exhaust of a well-stirred reactor (WSR) at Wright-Patterson Air Force Base and the exhaust of a gas turbine at Honeywell Engines and Systems. Field tests demonstrated the feasibility of the sensor for operation in harsh combustion environments but much improvement in the sensor design and operation was required. Experiments in near-adiabatic hydrogen/air CO2-doped flames were performed featuring two-line thermometry in the 4.8 mum spectral region. The sensor concentration measurement uncertainty was estimated at 2% for gas cell testing. CO concentration measurements agreed within 15% of conventional extractive sampling at WSR, and for the flame experiments the repeatability of the peak absorption gives a system uncertainty of 10%. The noise equivalent CO detection limit for these experiments was estimated at 2 ppm per meter, for combustion gas at 1000 K assuming a SNR ratio of 1.

  7. Semiconductor data book characteristics of approx. 10,000 transistors, FETs, UJTs, diodes, rectifiers, optical semiconductors, triacs and SCRs

    CERN Document Server

    Ball, A M

    1981-01-01

    Semiconductor Data Book, 11th Edition presents tables for ratings and characteristics of transistors and multiple transistors; silicon field effect transistors; unijunction transistors; low power-, variable-, power rectifier-, silicon reference-, and light emitting diodes; photodetectors; triacs; thyristors; lead identification; and transistor comparable types. The book starts by providing an introduction and explanation of tables and manufacturers' codes and addresses. Professionals requiring such data about semiconductors will find the book useful.

  8. Improvement of stability and efficiency in diode-pumped passively Q-switched intracavity optical parametric oscillator with a monolithic cavity

    International Nuclear Information System (INIS)

    Huang, J Y; Zhuang, W Z; Huang, Y P; Huang, Y J; Su, K W; Chen, Y F

    2012-01-01

    We improve the performance of intracavity optical parametric oscillator (IOPO) pumped by a diode-pumped Q-switched Nd:YVO 4 /Cr 4+ :YAG laser. The IOPO cavity is formed independently by a monolithic KTP crystal that the mirrors are directly deposited on top of the nonlinear crystal. We study the performances of this IOPO cavity with different reflectivity of the output coupler at 1.5 μm (R s ) of 80 and 50%. The average power of 1.5 μm is up to 3.3 W at the maximum pump power of 16.8 W for both cases. The diode-to-signal conversion efficiency is up to 20%, which is the highest one for IOPOs to our best knowledge. At the maximum pump power, the pulse energies are 41 μJ with the pulse width of 3 ns at a pulse repetition rate (PRR) of 80 kHz for R s = 80% and 51 μJ with the pulse width of 1.2 ns at a PRR of 65 kHz for R s = 50%, respectively. The pulse amplitude fluctuations in standard deviation are 2.6% for R s = 80% and 4% for R s = 50%, respectively

  9. Improving the optical performance of InGaN light-emitting diodes by altering light reflection and refraction with triangular air prism arrays.

    Science.gov (United States)

    Kang, Ji Hye; Kim, Hyung Gu; Chandramohan, S; Kim, Hyun Kyu; Kim, Hee Yun; Ryu, Jae Hyoung; Park, Young Jae; Beak, Yun Seon; Lee, Jeong-Sik; Park, Joong Seo; Lysak, Volodymyr V; Hong, Chang-Hee

    2012-01-01

    The effect of triangular air prism (TAP) arrays with different distance-to-width (d/w) ratios on the enhancement of light extraction efficiency (LEE) of InGaN light-emitting diodes (LEDs) is investigated. The TAP arrays embedded at the sapphire/GaN interface act as light reflectors and refractors, and thereby improve the light output power due to the redirection of light into escape cones on both the front and back sides of the LED. Enhancement in radiometric power as high as 117% and far-field angle as low as 129° are realized with a compact arrangement of TAP arrays compared with that of a conventional LED made without TAP arrays under an injection current of 20 mA. © 2012 Optical Society of America

  10. Novel diode laser system for photodynamic therapy

    DEFF Research Database (Denmark)

    Samsøe, E.; Petersen, P.M.; Andersen, Peter E.

    2001-01-01

    In this paper a novel diode laser system for photodynamic therapy is demonstrated. The system is based on linear spatial filtering and optical phase conjugate feedback from a photorefractive BaTiO3 crystal. The spatial coherence properties of the diode laser are significantly improved. The system...... is extracted in a high-quality beam and 80 percent of the output power is extracted through the fiber. The power transmitted through tile fiber scales linearly with the power of the laser diode. which means that a laser diode emitting 1.7 W multi-mode radiation would provide 1 W of optical power through a 50...

  11. Optical characterization of magnesium incorporation in p-GaN layers for core–shell nanorod light-emitting diodes

    Science.gov (United States)

    Gîrgel, I.; Šatka, A.; Priesol, J.; Coulon, P.-M.; Le Boulbar, E. D.; Batten, T.; Allsopp, D. W. E.; Shields, P. A.

    2018-04-01

    III-nitride nanostructures are of interest for a new generation of light-emitting diodes (LEDs). However, the characterization of doping incorporation in nanorod (NR) structures, which is essential for creating the p-n junction diodes, is extremely challenging. This is because the established electrical measurement techniques (such as capacitance–voltage or Hall-effect methods) require a simple sample geometry and reliable ohmic contacts, both of which are difficult to achieve in nanoscale devices. The need for homogenous, conformal n-type or p-type layers in core–shell nanostructures magnifies these challenges. Consequently, we demonstrate how a combination of non-contact methods (micro-photoluminescence, micro-Raman and cathodoluminescence), as well as electron-beam-induced-current, can be used to analyze the uniformity of magnesium incorporation in core–shell NRs and make a first estimate of doping levels by the evolution of band transitions, strain and current mapping. These techniques have been used to optimize the growth of core–shell nanostructures for electrical carrier injection, a significant milestone for their use in LEDs.

  12. High-power green light generation by second harmonic generation of single-frequency tapered diode lasers

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Andersen, Peter E.; Sumpf, Bernd

    2010-01-01

    laser emits in excess of 9 W single-frequency output power with a good beam quality. The output from the tapered diode laser is frequency doubled using periodically poled MgO:LiNbO3. We investigate the modulation potential of the green light and improve the modulation depth from 1:4 to 1:50.......We demonstrate the generation of high power (>1.5W) and single-frequency green light by single-pass second harmonic generation of a high power tapered diode laser. The tapered diode laser consists of a DBR grating for wavelength selectivity, a ridge section and a tapered section. The DBR tapered...

  13. CT-guided percutaneous laser disc decompression with Ceralas D, a diode laser with 980-nm wavelength and 200-{mu}m fiber optics

    Energy Technology Data Exchange (ETDEWEB)

    Gevargez, A. [Department of Radiology and Microtherapy, University Witten/Herdecke, Bochum (Germany); Groenemeyer, D.W.H. [Department of Radiology and Microtherapy, University Witten/Herdecke, Bochum (Germany); Entwicklungs- und Forschungszentrum fuer Mikrotherapie, Bochum (Germany); Czerwinski, F. [Entwicklungs- und Forschungszentrum fuer Mikrotherapie, Bochum (Germany)

    2000-08-01

    The aim of this study was to evaluate the compact, portable Ceralas-D diode laser (CeramOptec; 980+30 nm wavelength, 200-{mu}m optical fiber) concerning clinical usefulness, handling, and clinical results in the CT-guided treatment of herniated lumbar discs. The positioning of the canula in intradiscal space, the placement of the laser fiber into the disc through the lying canula, and the vaporization itself were carried out under CT-guidance. Due to the thin fiber optic, it was possible to use a thin 23-gauge canula. The laser procedure was performed in 0.1- to 1-s shots with 1-s pulse pause and 4-W power output. A total of 1650-2300 J was applied on each percutaneous laser disc decompression (PLDD). Results in 26 patients were established with a visual-analogue scale (VAS). On the follow-up examinations, 46% of the patients were absolutely pain free (>85% VAS) and fully active in everyday life after 4 postoperative weeks. Thirty-one percent of patients were relieved of the leg pain but had occasional back pain without sensorimotor impairment. Fifteen percent sensed a slight alleviation (>50% VAS) of the radiate pain. Eight percent did not experience radicular or pseudo-radicular pain alleviation (<25% VAS). Cerales-D proves to be an efficient tool for CT-guided PLDD on non-sequestered herniated lumbar discs. (orig.)

  14. DWDM channel spacing tunable optical TDM carrier from a mode-locked weak-resonant-cavity Fabry-Perot laser diode based fiber ring.

    Science.gov (United States)

    Peng, Guo-Hsuan; Chi, Yu-Chieh; Lin, Gong-Ru

    2008-08-18

    A novel optical TDM pulsed carrier with tunable mode spacing matching the ITU-T defined DWDM channels is demonstrated, which is generated from an optically injection-mode-locked weak-resonant-cavity Fabry-Perot laser diode (FPLD) with 10%-end-facet reflectivity. The FPLD exhibits relatively weak cavity modes and a gain spectral linewidth covering >33.5 nm. The least common multiple of the mode spacing determined by both the weak-resonant-cavity FPLD and the fiber-ring cavity can be tunable by adjusting length of the fiber ring cavity or the FPLD temperature to approach the desired 200GHz DWDM channel spacing of 1.6 nm. At a specific fiber-ring cavity length, such a least-common- multiple selection rule results in 12 lasing modes between 1532 and 1545 nm naturally and a mode-locking pulsewidth of 19 ps broadened by group velocity dispersion among different modes. With an additional intracavity bandpass filter, the operating wavelength can further extend from 1520 to 1553.5 nm. After channel filtering, each selected longitudinal mode gives rise to a shortened pulsewidth of 12 ps due to the reduced group velocity dispersion. By linear dispersion compensating with a 55-m long dispersion compensation fiber (DCF), the pulsewidth can be further compressed to 8 ps with its corresponding peak-to-peak chirp reducing from 9.7 to 4.3 GHz.

  15. Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Presa, S., E-mail: silvino.presa@tyndall.ie [Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork (Ireland); School of Engineering, University College Cork, Cork (Ireland); Maaskant, P. P.; Corbett, B. [Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork (Ireland); Kappers, M. J.; Humphreys, C. J. [Dep. Material Science and Metallurgy, University of Cambridge, CB3 0FS, Cambridge (United Kingdom)

    2016-07-15

    We present a comprehensive study of the emission spectra and electrical characteristics of InGaN/GaN multi-quantum well light-emitting diode (LED) structures under resonant optical pumping and varying electrical bias. A 5 quantum well LED with a thin well (1.5 nm) and a relatively thick barrier (6.6 nm) shows strong bias-dependent properties in the emission spectra, poor photovoltaic carrier escape under forward bias and an increase in effective resistance when compared with a 10 quantum well LED with a thin (4 nm) barrier. These properties are due to a strong piezoelectric field in the well and associated reduced field in the thicker barrier. We compare the voltage ideality factors for the LEDs under electrical injection, light emission with current, photovoltaic mode (PV) and photoluminescence (PL) emission. The PV and PL methods provide similar values for the ideality which are lower than for the resistance-limited electrical method. Under optical pumping the presence of an n-type InGaN underlayer in a commercial LED sample is shown to act as a second photovoltaic source reducing the photovoltage and the extracted ideality factor to less than 1. The use of photovoltaic measurements together with bias-dependent spectrally resolved luminescence is a powerful method to provide valuable insights into the dynamics of GaN LEDs.

  16. Real-Time Video Transmission Over Different Underwater Wireless Optical Channels Using a Directly Modulated 520  nm Laser Diode

    KAUST Repository

    Al-Halafi, Abdullah

    2017-09-13

    We experimentally demonstrate high-quality real-time video streaming over an underwater wireless optical communication (UWOC) link up to 5 m distance using phase-shift keying (PSK) modulation and quadrature amplitude modulation (QAM) schemes. The communication system uses software defined platforms connected to a commercial TO-9 packaged pigtailed 520 nm directly modulated laser diode (LD) with 1.2 GHz bandwidth as the optical transmitter and an avalanche photodiode (APD) module as the receiver. To simulate various underwater channels, we perform laboratory experiments on clear, coastal, harbor I, and harbor II ocean water types. The measured bit error rates of the received video streams are 1.0×10−9 for QPSK, 4-QAM, and 8-QAM and 9.9×10−9 for 8-PSK. We further evaluate the quality of the received live video images using structural similarity and achieve values of about 0.9 for the first three water types, and about 0.7 for harbor II. To the best of our knowledge, these results present the highest quality video streaming ever achieved in UWOC systems that resemble communication channels in real ocean water environments.

  17. Influence of laser lift-off on optical and structural properties of InGaN/GaN vertical blue light emitting diodes

    Directory of Open Access Journals (Sweden)

    M. H. Doan

    2012-06-01

    Full Text Available The influences of the laser lift-off (LLO process on the InGaN/GaN blue light emitting diode (LED structures, grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition, have been comprehensively investigated. The vertical LED structures on Cu carriers are fabricated using electroplating, LLO, and inductively coupled plasma etching processes sequentially. A detailed study is performed on the variation of defect concentration and optical properties, before and after the LLO process, employing high-resolution transmission electron microscopy (HRTEM, scanning electron microscopy (SEM observations, cathodoluminescence (CL, photoluminescence (PL, and high-resolution X-ray diffraction (HRXRD measurements. The SEM observations on the distribution of dislocations after the LLO show well that even the GaN layer near to the multiple quantum wells (MQWs is damaged. The CL measurements reveal that the peak energy of the InGaN/GaN MQW emission exhibits a blue-shift after the LLO process in addition to a reduced intensity. These behaviors are attributed to a diffusion of indium through the defects created by the LLO and creation of non-radiative recombination centers. The observed phenomena thus suggest that the MQWs, the active region of the InGaN/GaN light emitting diodes, may be damaged by the LLO process when thickness of the GaN layer below the MQW is made to be 5 μm, a conventional thickness. The CL images on the boundary between the KrF irradiated and non-irradiated regions suggest that the propagation of the KrF laser beam and an accompanied recombination enhanced defect reaction, rather than the propagation of a thermal shock wave, are the main origin of the damage effects of the LLO process on the InGaN/GaN MQWs and the n-GaN layer as well.

  18. Holographic Optical Element-Based Laser Diode Source System for Direct Metal Deposition in Space, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — To meet the challenges of rapid prototyping, direct hardware fabrication, and on-the-spot repairs on the ground and on NASA space platforms, Physical Optics...

  19. Electromagnetic wave analogue of electronic diode

    OpenAIRE

    Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...

  20. Performance of continuous wave and acousto-optically Q-switched Tm, Ho: YAP laser pumped by diode laser

    Science.gov (United States)

    Li, Guoxing; Xie, Wenqiang; Yang, Xining; Zhang, Ziqiu; Zhang, Hongda; Zhang, Liang

    2018-02-01

    A two-end-pumped a-cut Tm(0.5%), Ho(0.5%):YAP laser output at 2119nm is reported under cryogenic temperature. The maximum output power reached to 7.76W with the incident pump power of 24.2W in CW mode. With the acousto-optically Q-switch, an average power of 7.3W can be obtained, when the pulse repetition frequency was 7.5 kHz. The corresponding optical-to-optical conversion efficiency was 30.2% and the slope efficiency was 31.4%. Then, the laser output characteristics in the repetition frequency of 7.5 kHz and 10kHz were researched. The output power, the optical-to-optical conversion efficiency and slope efficiency were increased with the increase of the repetition frequency. In the same repetition frequency, the pulse duration was decreasing with the growth of the incident pump power.

  1. Absorption characteristic of paeoniflorin-6'-O-benzene sulfonate (CP-25) in in situ single-pass intestinal perfusion in rats.

    Science.gov (United States)

    Yang, Xiao-Dan; Wang, Chun; Zhou, Peng; Yu, Jun; Asenso, James; Ma, Yong; Wei, Wei

    2016-09-01

    1. Paeoniflorin-6'-O-benzene sulfonate (CP-25) was synthesized to improve the poor oral absorption of paeoniflorin (Pae). 2. This study was performed to investigate the absorptive behavior and mechanism of CP-25 in in situ single-pass intestinal perfusion in rats, using Pae as a control. 3. The results showed that intestinal absorption of CP-25 was neither segmental nor sex dependent. However, the main segment of intestine that absorbed Pae was the duodenum. Furthermore, passive transport was confirmed to be the main absorption pattern of CP-25. More importantly, the absorption of CP-25 was much higher than Pae in the small intestine. 4. Among the ABC transporter inhibitors, the absorption rate of Pae increased in the presence of P-gp inhibitors verapamil and GF120918, which indicated that Pae was a substrate of P-glycoprotein (P-gp), however, such was not observed in the presence of breast cancer resistance protein and multidrug resistance-associated protein 2. Finally, the ABC transporter inhibitors did not have any significant impact on CP-25 as demonstrated in the parallel studies. 5. CP-25 could improve the poor absorption of Pae, which may be attributed to both the lipid solubility enhancement and its resistance to P-gp-mediated efflux.

  2. Double Pass 595 nm Pulsed Dye Laser Does Not Enhance the Efficacy of Port Wine Stains Compared with Single Pass: A Randomized Comparison with Histological Examination.

    Science.gov (United States)

    Yu, Wenxin; Zhu, Jiafang; Wang, Lizhen; Qiu, Yajing; Chen, Yijie; Yang, Xi; Chang, Lei; Ma, Gang; Lin, Xiaoxi

    2018-03-27

    To compare the efficacy and safety of double-pass pulsed dye laser (DWL) and single-pass PDL (SWL) in treating virgin port wine stain (PWS). The increase in the extent of vascular damage attributed to the use of double-pass techniques for PWS remains inconclusive. A prospective, side-by-side comparison with a histological study for virgin PWS is still lacking. Twenty-one patients (11 flat PWS, 10 hypertrophic PWS) with untreated PWS underwent 3 treatments at 2-month intervals. Each PWS was divided into three treatment sites: SWL, DWL, and untreated control. Chromametric and visual evaluation of the efficacy and evaluation of side effects were conducted 3 months after final treatment. Biopsies were taken at the treated sites immediately posttreatment. Chromametric and visual evaluation suggested that DWL sites showed no significant improvement compared with SWL (p > 0.05) in treating PWS. The mean depth of photothermal damage to the vessels was limited to a maximum of 0.36-0.41 mm in both SWL and DWL sides. Permanent side effects were not observed in any patients. Double-pass PDL does not enhance PWS clearance. To improve the clearance of PWS lesions, either the depth of laser penetration should be increased or greater photothermal damage to vessels should be generated.

  3. High-resolution digital elevation models from single-pass TanDEM-X interferometry over mountainous regions: A case study of Inylchek Glacier, Central Asia

    Science.gov (United States)

    Neelmeijer, Julia; Motagh, Mahdi; Bookhagen, Bodo

    2017-08-01

    This study demonstrates the potential of using single-pass TanDEM-X (TDX) radar imagery to analyse inter- and intra-annual glacier changes in mountainous terrain. Based on SAR images acquired in February 2012, March 2013 and November 2013 over the Inylchek Glacier, Kyrgyzstan, we discuss in detail the processing steps required to generate three reliable digital elevation models (DEMs) with a spatial resolution of 10 m that can be used for glacial mass balance studies. We describe the interferometric processing steps and the influence of a priori elevation information that is required to model long-wavelength topographic effects. We also focus on DEM alignment to allow optimal DEM comparisons and on the effects of radar signal penetration on ice and snow surface elevations. We finally compare glacier elevation changes between the three TDX DEMs and the C-band shuttle radar topography mission (SRTM) DEM from February 2000. We introduce a new approach for glacier elevation change calculations that depends on the elevation and slope of the terrain. We highlight the superior quality of the TDX DEMs compared to the SRTM DEM, describe remaining DEM uncertainties and discuss the limitations that arise due to the side-looking nature of the radar sensor.

  4. Segmental-dependent membrane permeability along the intestine following oral drug administration: Evaluation of a triple single-pass intestinal perfusion (TSPIP) approach in the rat.

    Science.gov (United States)

    Dahan, Arik; West, Brady T; Amidon, Gordon L

    2009-02-15

    In this paper we evaluate a modified approach to the traditional single-pass intestinal perfusion (SPIP) rat model in investigating segmental-dependent permeability along the intestine following oral drug administration. Whereas in the traditional model one single segment of the intestine is perfused, we have simultaneously perfused three individual segments of each rat intestine: proximal jejunum, mid-small intestine and distal ileum, enabling to obtain tripled data from each rat compared to the traditional model. Three drugs, with different permeabilities, were utilized to evaluate the model: metoprolol, propranolol and cimetidine. Data was evaluated in comparison to the traditional method. Metoprolol and propranolol showed similar P(eff) values in the modified model in all segments. Segmental-dependent permeability was obtained for cimetidine, with lower P(eff) in the distal parts. Similar P(eff) values for all drugs were obtained in the traditional method, illustrating that the modified model is as accurate as the traditional, throughout a wide range of permeability characteristics, whether the permeability is constant or segment-dependent along the intestine. Three-fold higher statistical power to detect segmental-dependency was obtained in the modified approach, as each subject serves as his own control. In conclusion, the Triple SPIP model can reduce the number of animals utilized in segmental-dependent permeability research without compromising the quality of the data obtained.

  5. All-optical flip-flop operation based on asymmetric active-multimode interferometer bi-stable laser diodes

    DEFF Research Database (Denmark)

    Jiang, H.; Chaen, Y.; Hagio, T.

    2011-01-01

    We demonstrate fast and low energy all optical flip-flop devices based on asymmetric active-multimode interferometer using high-mesa waveguide structure. The implemented devices showed high speed alloptical flip-flop operation with 25ps long pulses. The rising and falling times of the output sign...

  6. Design and evaluation of capillary coupled with optical fiber light-emitting diode induced fluorescence detection for capillary electrophoresis.

    Science.gov (United States)

    Ji, Hongyun; Li, Meng; Guo, Lihong; Yuan, Hongyan; Wang, Chunling; Xiao, Dan

    2013-09-01

    A new detector, capillary coupled with optical fiber LED-induced fluorescence detector (CCOF-LED-IFD, using CCOF for short), is introduced for CE. The strategy of the present work was that the optical fiber and separation capillary were, in the parallel direction, fastened in a fixation capillary with larger inner diameter. By employing larger inner diameter, the fixation capillary allowed the large diameter of the optical fiber to be inserted into it. By transmitting an enhanced excitation light through the optical fiber, the detection sensitivity was improved. The advantages of the CCOF-CE system were validated by the detection of riboflavin, and the results were compared to those obtained by the in-capillary common optical fiber LED-induced fluorescence detector (IC-COF-LED-IFD, using COF for short). The LODs of CCOF-CE and COF-CE were 0.29 nM and 11.0 nM (S/N = 3), respectively. The intraday (n = 6) repeatability and interday (n = 6) reproducibility of migration time and corresponding peak area for both types of CE were all less than 1.10 and 3.30%, respectively. The accuracy of the proposed method was judged by employing standard addition method, and recoveries obtained were in the range of 98.0-102.4%. The results indicated that the sensitivity of the proposed system was largely improved, and that its reproducibility and accuracy were satisfactory. The proposed system was successfully applied to separate and determine riboflavin in real sample. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate

    Science.gov (United States)

    Deng, Gaoqiang; Zhang, Yuantao; Yu, Ye; Yan, Long; Li, Pengchong; Han, Xu; Chen, Liang; Zhao, Degang; Du, Guotong

    2018-04-01

    In this paper, GaN-based yellow light-emitting diodes (LEDs) were homoepitaxially grown on free-standing (0001) GaN substrates by metal-organic chemical vapor deposition. X-ray diffraction (XRD), photoluminescence (PL), and electroluminescence (EL) measurements were conducted to investigate the structural, optical, and electrical properties of the yellow LED. The XRD measurement results showed that the InGaN/GaN multiple quantum wells (MQWs) in the LED structure have good periodicity because the distinct MQWs related higher order satellite peaks can be clearly observed from the profile of 2θ-ω XRD scan. The low temperature (10 K) and room temperature PL measurement results yield an internal quantum efficiency of 16% for the yellow LED. The EL spectra of the yellow LED present well Gaussian distribution with relatively low linewidth (47-55 nm), indicating the homogeneous In-content in the InGaN quantum well layers in the yellow LED structure. It is believed that this work will aid in the future development of GaN on GaN LEDs with long emission wavelength.

  8. Optical 16-QAM-52-OFDM transmission at 4 Gbit/s by directly modulating a coherently injection-locked colorless laser diode.

    Science.gov (United States)

    Chi, Yu-Chieh; Li, Yi-Cheng; Wang, Huai-Yung; Peng, Peng-Chun; Lu, Hai-Han; Lin, Gong-Ru

    2012-08-27

    Coherently injection-locked and directly modulated weak-resonant-cavity laser diode (WRC-FPLD) for back-to-back optical 16-quadrature-amplitude-modulation (QAM) and 52-subcarrier orthogonal frequency division multiplexing (OFDM) transmission with maximum bit rate up to 4 Gbit/s at carrier frequency of 2.5 GHz is demonstrated. The WRC-FPLD transmitter source is a specific design with very weak-resonant longitudinal modes to preserve its broadband gain spectral characteristics for serving as a colorless WDM-PON transmitter. Under coherent injection-locking, the relative-intensity noise (RIN) of the injection-locked WRC-FPLD can be suppressed to ?105 dBc/Hz and the error vector magnitude of the received optical OFDM data is greatly reduced with the amplitude error suppressed down 5.5%. Such a coherently injection-locked single-mode WRC-FPLD can perform both the back-to-back and the 25-km-SMF 16-QAM-52-OFDM transmissions with a symbol rate of 20-MSa/s in each OFDM subcarrier. After coherent injection locking, the BER of the back-to-back transmitted 16-QAM-52-OFDM data is reduced to 2.5 × 10(-5) at receiving power of ?10 dBm. After propagating along a 25-km-long SMF, a receiving power sensitivity of ?7.5 dBm is required to obtain a lowest BER of 2.5 × 10(-5), and a power penalty of 2.7 dB is observed when comparing with the back-to-back transmission.

  9. Closed-Loop Doluisio (Colon, Small Intestine) and Single-Pass Intestinal Perfusion (Colon, Jejunum) in Rat-Biophysical Model and Predictions Based on Caco-2.

    Science.gov (United States)

    Lozoya-Agullo, Isabel; Gonzalez-Alvarez, Isabel; Zur, Moran; Fine-Shamir, Noa; Cohen, Yael; Markovic, Milica; Garrigues, Teresa M; Dahan, Arik; Gonzalez-Alvarez, Marta; Merino-Sanjuán, Matilde; Bermejo, Marival; Avdeef, Alex

    2017-12-29

    The effective rat intestinal permeability (P eff ) was deconvolved using a biophysical model based on parameterized paracellular, aqueous boundary layer, transcellular permeabilities, and the villus-fold surface area expansion factor. Four types of rat intestinal perfusion data were considered: single-pass intestinal perfusion (SPIP) in the jejunum (n = 40), and colon (n = 15), closed-loop (Doluisio type) in the small intestine (n = 78), and colon (n = 74). Moreover, in vitro Caco-2 permeability values were used to predict rat in vivo values in the rat data studied. Comparable number of molecules permeate via paracellular water channels as by the lipoidal transcellular route in the SPIP method, although in the closed-loop method, the paracellular route appears dominant in the colon. The aqueous boundary layer thickness in the small intestine is comparable to that found in unstirred in vitro monolayer assays; it is thinner in the colon. The mucosal surface area in anaesthetized rats is 0.96-1.4 times the smooth cylinder calculated value in the colon, and it is 3.1-3.6 times in the small intestine. The paracellular permeability of the intestine appeared to be greater in rat than human, with the colon showing more leakiness (higher P para ) than the small intestine. Based on log intrinsic permeability values, the correlations between the in vitro and in vivo models ranged from r 2 0.82 to 0.92. The SPIP-Doluisio method comparison indicated identical log permeability selectivity trend with negligible bias.

  10. Estimating dose to implantable cardioverter-defibrillator outside the treatment fields using a skin QED diode, optically stimulated luminescent dosimeters, and LiF thermoluminescent dosimeters

    Energy Technology Data Exchange (ETDEWEB)

    Chan, Maria F., E-mail: chanm@mskcc.org [Department of Medical Physics, Memorial Sloan-Kettering Cancer Center, New York, NY (United States); Song, Yulin; Dauer, Lawrence T.; Li Jingdong; Huang, David; Burman, Chandra [Department of Medical Physics, Memorial Sloan-Kettering Cancer Center, New York, NY (United States)

    2012-10-01

    The purpose of this work was to determine the relative sensitivity of skin QED diodes, optically stimulated luminescent dosimeters (OSLDs) (microStar Trade-Mark-Sign DOT, Landauer), and LiF thermoluminescent dosimeters (TLDs) as a function of distance from a photon beam field edge when applied to measure dose at out-of-field points. These detectors have been used to estimate radiation dose to patients' implantable cardioverter-defibrillators (ICDs) located outside the treatment field. The ICDs have a thin outer case made of 0.4- to 0.6-mm-thick titanium ({approx}2.4-mm tissue equivalent). A 5-mm bolus, being the equivalent depth of the devices under the patient's skin, was placed over the ICDs. Response per unit absorbed dose-to-water was measured for each of the dosimeters with and without bolus on the beam central axis (CAX) and at a distance up to 20 cm from the CAX. Doses were measured with an ionization chamber at various depths for 6- and 15-MV x-rays on a Varian Clinac-iX linear accelerator. Relative sensitivity of the detectors was determined as the ratio of the sensitivity at each off-axis distance to that at the CAX. The detector sensitivity as a function of the distance from the field edge changed by {+-} 3% (1-11%) for LiF TLD-700, decreased by 10% (5-21%) for OSLD, and increased by 16% (11-19%) for the skin QED diode (Sun Nuclear Corp.) at the equivalent depth of 5 mm for 6- or 15-MV photon energies. Our results showed that the use of bolus with proper thickness (i.e., {approx}d{sub max} of the photon energy) on the top of the ICD would reduce the scattered dose to a lower level. Dosimeters should be calibrated out-of-field and preferably with bolus equal in thickness to the depth of interest. This can be readily performed in clinic.

  11. Optimisation of optical properties of a long-wavelength GaInNAs quantum-well laser diode

    Energy Technology Data Exchange (ETDEWEB)

    Alias, M S; Maskuriy, F; Faiz, F; Mitani, S M [Advanced Physical Technologies Laboratory, Telekom Malaysia Research and Development (TMR and D), Lingkaran Teknokrat Timur, 63000 Cyberjaya, Selangor (Malaysia); AL-Omari, A N [Electronic Engineering Department, Hijjawi Faculty for Engineering Technology, Yarmouk University, Irbid 21163 (Jordan)

    2013-11-30

    We report optimisation of optical properties of a strained GaInNAs/GaAs quantum-well laser, by taking into account the many-body effect theory and the bowing parameter. The theoretical transition energies and the GaInNAs bowing parameter are fitted into the photoluminescence spectrum of the GaInNAs quantum well, obtained in the experiment. The theoretical results for the photoluminescence spectrum and laser characteristics (light, current and voltage) exhibits a high degree of agreement with the experimental results. (lasers)

  12. Characteristics of Optical Diffusers for Light-Emitting Diodes Backlight Unit Prepared by Melt-Extrusion Process

    Science.gov (United States)

    Kim, Hyo Jin; Kim, Dong Won; Kim, Seong Woo

    2013-10-01

    Using extrusion compounding followed by compression molding processes, polycarbonate-based optical diffusers with uniform dispersion of diffusing particles could be prepared for application in direct-lit LED backlight unit. Inorganic porous silica and organic silicone microsphere particles were employed as diffusing agents. The inclusion of diffusing particles up to 3 wt % substantially improved the luminance uniformity with respect to both location and viewing angle, and the effect was shown to be more prominent for the silicone particles. Alternatively, inorganic silica particles could yield diffusers with enhanced absolute luminance and thermal resistance property. The thermo-mechanical property of the elastic modulus was revealed to be improved upon addition of diffusing particles of silica and silicone with cross-linked structure.

  13. Comparison of high-power diode pumped actively Q-switched double-clad flower shape co-doped-Er3+:Yb3+fiber laser using acousto-optic and mechanical (optical) modulators

    Science.gov (United States)

    El-Sherif, Ashraf F.; Harfosh, Amr

    2015-09-01

    A diode-pumped acousto-optic Q-switching Er3+:Yb3+ co-doped high-power fiber laser is reported, laser output average power in excess of 1.65 W was achieved for Q-switching at relatively high repetition rates from 10 to 100 kHz. The shortest pulse duration obtained was 10 ns, giving a highest peak power of 9.8 kW and 98 μJ energy per pulse, this is the highest power yet reported from any type of actively Q-switched flower double-clad Er3+:Yb3+ fiber laser operating in low order mode at 1550 nm. The pulse train with high pulse-to-pulse stability of 95% occurred at a range of repetition rates up to 100 kHz with peak power of 0.4 kW, 40 ns pulse width and 16 μJ energy per pulse at 1550 nm for a launched pump power of 5 W. With the mechanical modulation Q-switching of the Er3+:Yb3+ co-doped fiber laser, it was found that the narrowest pulse width of 35 ns was obtained with peak power of 15.5 kW and energy per pulse 0.5 mJ at pulse repetition frequency of 1 kHz. A moderate pulse-to-pulse stability of 75% occurred over a range of high repetition rates. A comparison between mechanical modulation and acousto-optic Q-switching has been made at a repetition rate of 20 kHz. The energy per pulse, pulse width, and the average power of a mechanical optical Q-switching laser were greater than for the acousto-optic Q-switching, but the pulse width is narrower and so the high peak power of an acousto-optic Q-switching pulse is greater than for the mechanical (optical) Q-switching laser at repetition rates of up to 100 kHz.

  14. Generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser in a cascade of nonlinear crystals

    DEFF Research Database (Denmark)

    Hansen, Anders Kragh; Jensen, Ole Bjarlin; Sumpf, Bernd

    2014-01-01

    frequency conversion of infrared tapered diode lasers. Here, we describe the generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser, itself yielding 10 W at 1063 nm. This SHG is performed in single pass through a cascade of two PPMgO:LN crystals with re...... power of 3.5 W corresponds to a power enhancement greater than 2 compared to SHG in each of the crystals individually and is the highest visible output power generated by frequency conversion of a single diode laser. Such laser sources provide the necessary pump power for biophotonics applications...

  15. Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes

    Directory of Open Access Journals (Sweden)

    Matteo Meneghini

    2015-10-01

    Full Text Available This paper describes a detailed analysis of the effects of high temperatures on the optical performance and structural characteristics of GaN-based LED structures with a high threading dislocation density. Results show that, as a consequence of storage at 900 °C in N2 atmosphere, the samples exhibit: (i an increase in the efficiency of GaN and quantum-well luminescence, well correlated to an increase in carrier lifetime; (ii a decrease in the parasitic luminescence peaks related to Mg acceptors, which is correlated to the reduction in the concentration of Mg in the p-type region, detected by Secondary Ion Mass Spectroscopy (SIMS; (iii a diffusion of acceptor (Mg atoms to the quantum well region; (iv a reduction in the yield of Rutherford Backscattering Spectrometry (RBS-channeling measurements, possibly due to a partial re-arrangement of the dislocations, which is supposed to be correlated to the increase in radiative efficiency (see (i.

  16. Synthesis Alq3and effect of concentration iton optical and electrical performance of Organic Light Emitting Diodes withtwo single-layer mixture and multilayer structures

    Directory of Open Access Journals (Sweden)

    Mohammadreza Jafari

    2017-05-01

    Full Text Available In this article, organic light emitting diode with the two structures of ITO / PEDOT: PSS /PVK/Alq3/PBD/Al and ITO/PEDOT: PSS/PVK: Alq3: PBD/Alwith different concentrations were fabricated. The effects of concentration of Alq3 complex on the characteristics of diodes, which were made, were studied. Layers with the same weight percentages PVK, PBD and different wt. %Alq3 by spin coating on PEDOT: PSS layer was deposited. Current - voltage characteristic curve - and luminescence (El were studied. Experimental results showed that by increasing the concentration of the Alq3complexin both structure, luminescence increased and the operating voltage is reduced.

  17. Modeling of thermal and optical effects in dental pulp during the irradiation with neodymium and diode lasers; Modelagem dos efeitos termicos e opticos na polpa dentaria durante a irradiacao com os lasers de diodo de neodimio

    Energy Technology Data Exchange (ETDEWEB)

    Farhat, Patricia Bahls de Almeida

    2003-07-01

    During the development of applications of high intensity lasers in the enamel and dentine, adverse thermal effects into the entire dental structure, including the pulp, must be verified. The measurement of the temperature in the intact pulp, however, is not a solved problem. For this purpose, models have been used frequently, using extracted teeth, with pulpal cavities filled with materials that simulate only thermal properties of the pulp. Current models, however, do not simulate optical properties of the pulp, not taking the remaining radiation in the pulp chamber into account. The aim of this study was to verify if the remaining radiation from neodymium and diode lasers that reach the pulp chamber, at the models using extracted bovine teeth, can cause local thermal effects. For this purpose, two models were developed, using extracted bovine teeth with their pulp chambers filled with water (simulating pulp thermal characteristics) without (model 1) and with (model 2) an optical absorbent. Models were radiated with 1 W. The obtained results show that, for both lasers, the temperature rise in model 2 pulp chamber is: up to 11 % higher than in the model 1 when the enamel is radiated; and up to 37% higher than in the model 1 when dentine is radiated (1 mm from the pulp), indicating that the level of the remaining radiation is relevant for the construction of models excited by the neodymium and diode lasers. (author)

  18. Processes for design, construction and utilisation of arrays of light-emitting diodes and light-emitting diode-coupled optical fibres for multi-site brain light delivery.

    Science.gov (United States)

    Bernstein, Jacob G; Allen, Brian D; Guerra, Alexander A; Boyden, Edward S

    2015-05-01

    Optogenetics enables light to be used to control the activity of genetically targeted cells in the living brain. Optical fibers can be used to deliver light to deep targets, and LEDs can be spatially arranged to enable patterned light delivery. In combination, arrays of LED-coupled optical fibers can enable patterned light delivery to deep targets in the brain. Here we describe the process flow for making LED arrays and LED-coupled optical fiber arrays, explaining key optical, electrical, thermal, and mechanical design principles to enable the manufacturing, assembly, and testing of such multi-site targetable optical devices. We also explore accessory strategies such as surgical automation approaches as well as innovations to enable low-noise concurrent electrophysiology.

  19. Optical gain and absorption of 420 nm InGaN-based laser diodes grown on m-plane GaN substrate

    KAUST Repository

    Shen, Chao

    2014-01-01

    Segmented contact method was utilized to measure the gain and absorption spectra at below and above threshold for 420nm m-plane InGaN/GaN laser diode with a comparatively higher peak modal gain of 29.2 cm-1.

  20. The Beam Characteristics of High Power Diode Laser Stack

    Science.gov (United States)

    Gu, Yuanyuan; Fu, Yueming; Lu, Hui; Cui, Yan

    2018-03-01

    Direct diode lasers have some of the most attractive features of any laser. They are very efficient, compact, wavelength versatile, low cost, and highly reliable. However, the full utilization of direct diode lasers has yet to be realized. However, the poor quality of diode laser beam itself, directly affect its application ranges, in order to better use of diode laser stack, need a proper correction of optical system, which requires accurate understanding of the diode laser beam characteristics. Diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. Therefore diode laser cladding will open a new field of repairing for the damaged machinery parts which must contribute to recycling of the used machines and saving of cost.

  1. Coaxial foilless diode

    OpenAIRE

    Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

    2014-01-01

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

  2. Diode and Diode Circuits, a Programmed Text.

    Science.gov (United States)

    Balabanian, Norman; Kirwin, Gerald J.

    This programed text on diode and diode circuits was developed under contract with the United States Office of Education as Number 4 in a series of materials for use in an electrical engineering sequence. It is intended as a supplement to a regular text and other instructional material. (DH)

  3. Frequency-comb-assisted broadband precision spectroscopy with cascaded diode lasers

    DEFF Research Database (Denmark)

    Liu, Junqiu; Brasch, Victor; Pfeiffer, Martin H. P.

    2016-01-01

    Frequency-comb-assisted diode laser spectroscopy, employing both the accuracy of an optical frequency comb and the broad wavelength tuning range of a tunable diode laser, has been widely used in many applications. In this Letter, we present a novel method using cascaded frequency agile diode lasers...

  4. Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Topper, Alyson D.; Campola, Michael J.; Label, Kenneth A.

    2017-01-01

    In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.

  5. Effect of alcohol vapor treatment on electrical and optical properties of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) films for indium tin oxide-free organic light-emitting diodes

    Science.gov (United States)

    Fallahzadeh, Ali; Saghaei, Jaber; Yousefi, Mohammad Hassan

    2014-11-01

    A simple alcohol vapor treatment (AVT) technique was proposed to improve the conductivity of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films. In this technique, various alcohols, i.e. methanol, ethanol, 2-propanol and ethylene glycol, were applied to treat the surface of the films formed and then they were annealed. The sheet resistance of PEDOT:PSS films was significantly reduced from 130 kΩ/sq to 60 Ω/sq when treated with methanol vapor. The investigation of the vertical resistance of the films showed that the sample treated with methanol vapor displayed the lowest resistance as well. The mechanism of conductivity enhancement of PEDOT:PSS films through AVT method was explained by surface phase images, UV and IR spectra of PEDOT:PSS films. Optical transmittance spectrum of treated films exhibited that AVT has even enhanced the optical transmittance slightly. Improvement in the morphology, electrical and optical properties of PEDOT:PSS films prompted their applications as a transparent anode in the fabrication of ITO-free organic light-emitting diodes (OLEDs). The OLED manufactured based on methanol-treated PEDOT:PSS films demonstrated the highest luminance.

  6. Visible optical radiation generates bactericidal effect applicable for inactivation of health care associated germs demonstrated by inactivation of E. coli and B. subtilis using 405-nm and 460-nm light emitting diodes

    Science.gov (United States)

    Hönes, Katharina; Stangl, Felix; Sift, Michael; Hessling, Martin

    2015-07-01

    The Ulm University of Applied Sciences is investigating a technique using visible optical radiation (405 nm and 460 nm) to inactivate health-hazardous bacteria in water. A conceivable application could be point-of-use disinfection implementations in developing countries for safe drinking water supply. Another possible application field could be to provide sterile water in medical institutions like hospitals or dental surgeries where contaminated pipework or long-term disuse often results in higher germ concentrations. Optical radiation for disinfection is presently mostly used in UV wavelength ranges but the possibility of bacterial inactivation with visible light was so far generally disregarded. One of the advantages of visible light is, that instead of mercury arc lamps, light emitting diodes could be used, which are commercially available and therefore cost-efficient concerning the visible light spectrum. Furthermore they inherit a considerable longer life span than UV-C LEDs and are non-hazardous in contrast to mercury arc lamps. Above all there are specific germs, like Bacillus subtilis, which show an inactivation resistance to UV-C wavelengths. Due to the totally different deactivation mechanism even higher disinfection rates are reached, compared to Escherichia coli as a standard laboratory germ. By 460 nm a reduction of three log-levels appeared with Bacillus subtilis and a half log-level with Escherichia coli both at a dose of about 300 J/cm². By the more efficient wavelength of 405 nm four and a half log-levels are reached with Bacillus subtilis and one and a half log-level with Escherichia coli also both at a dose of about 300 J/cm². In addition the employed optical setup, which delivered a homogeneous illumination and skirts the need of a stirring technique to compensate irregularities, was an important improvement compared to previous published setups. Evaluated by optical simulation in ZEMAX® the designed optical element provided proven

  7. Method and system for homogenizing diode laser pump arrays

    Science.gov (United States)

    Bayramian, Andy J

    2013-10-01

    An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

  8. Active Stabilization of a Diode Laser Injection Lock

    OpenAIRE

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-01-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudde...

  9. Doping Optimization for High Efficiency in Semiconductor Diode Lasers and Amplifiers

    Science.gov (United States)

    2016-03-01

    JOURNAL OF QUANTUM ELECTRONICS, VOL. , NO. , 1 Doping Optimization for High Efficiency in Semiconductor Diode Lasers and Amplifiers Dominic F...Siriani, Member, IEEE Abstract—A generalized theoretical formalism is derived that optimizes the doping profile of semiconductor diode lasers and amplifiers...Diode lasers, semiconductor lasers, semiconduc- tor optical amplifiers. I. INTRODUCTION ELECTRICALLY injected diode lasers have been demon-strated in many

  10. Fluorescence lifetime imaging using light emitting diodes

    International Nuclear Information System (INIS)

    Kennedy, Gordon T; Munro, Ian; Poher, Vincent; French, Paul M W; Neil, Mark A A; Elson, Daniel S; Hares, Jonathan D

    2008-01-01

    We demonstrate flexible use of low cost, high-power light emitting diodes as illumination sources for fluorescence lifetime imaging (FLIM). Both time-domain and frequency-domain techniques have been implemented at wavelengths spanning the range 450-640 nm. Additionally, we demonstrate optically sectioned fluorescence lifetime imaging by combining structured illumination with frequency-domain FLIM

  11. The Fuge Tube Diode Array Spectrophotometer

    Science.gov (United States)

    Arneson, B. T.; Long, S. R.; Stewart, K. K.; Lagowski, J. J.

    2008-01-01

    We present the details for adapting a diode array UV-vis spectrophotometer to incorporate the use of polypropylene microcentrifuge tubes--fuge tubes--as cuvettes. Optical data are presented validating that the polyethylene fuge tubes are equivalent to the standard square cross section polystyrene or glass cuvettes generally used in…

  12. Microring Diode Laser for THz Generation

    DEFF Research Database (Denmark)

    Mariani, S.; Andronico, A.; Favero, I.

    2013-01-01

    We report on the modeling and optical characterization of AlGaAs/InAs quantum-dot microring diode lasers designed for terahertz (THz) difference frequency generation (DFG) between two whispering gallery modes (WGMs) around 1.3 $\\mu$m. In order to investigate the spectral features of this active...

  13. Static thermo-optic instability in double-pass fiber amplifiers

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper

    2016-01-01

    A coupled-mode formalism, earlier used to describe transverse mode instabilities in single-pass optical fiber amplifiers, is extended to the case of double-pass amplifiers. Contrary to the single-pass case, it is shown that the thermo-optic nonlinearity can couple light at the same frequency...... between the LP01 and LP11 modes, leading to a static deformation of the output beam profile. This novel phenomenon is caused by the interaction of light propagating in either direction with thermo-optic index perturbations caused by light propagating in the opposite direction. The threshold power...... for the static deformation is found to be several times lower than what is typically found for the dynamic modal instabilities observed in single-pass amplifiers. (C) 2016 Optical Society of America...

  14. Coaxial foilless diode

    International Nuclear Information System (INIS)

    Kong, Long; Liu, QingXiang; Li, XiangQiang; Wang, ShaoMeng

    2014-01-01

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves

  15. 100  J-level nanosecond pulsed diode pumped solid state laser.

    Science.gov (United States)

    Banerjee, Saumyabrata; Mason, Paul D; Ertel, Klaus; Jonathan Phillips, P; De Vido, Mariastefania; Chekhlov, Oleg; Divoky, Martin; Pilar, Jan; Smith, Jodie; Butcher, Thomas; Lintern, Andrew; Tomlinson, Steph; Shaikh, Waseem; Hooker, Chris; Lucianetti, Antonio; Hernandez-Gomez, Cristina; Mocek, Tomas; Edwards, Chris; Collier, John L

    2016-05-01

    We report on the successful demonstration of a 100 J-level, diode pumped solid state laser based on cryogenic gas cooled, multi-slab ceramic Yb:YAG amplifier technology. When operated at 175 K, the system delivered a pulse energy of 107 J at a 1 Hz repetition rate and 10 ns pulse duration, pumped by 506 J of diode energy at 940 nm, corresponding to an optical-to-optical efficiency of 21%. To the best of our knowledge, this represents the highest energy obtained from a nanosecond pulsed diode pumped solid state laser. This demonstration confirms the energy scalability of the diode pumped optical laser for experiments laser architecture.

  16. Influences of point defects on electrical and optical properties of InGaN light-emitting diodes at cryogenic temperature

    Science.gov (United States)

    Tu, Yi; Ruan, Yujiao; Zhu, Lihong; Tu, Qingzhen; Wang, Hongwei; Chen, Jie; Lu, Yijun; Gao, Yulin; Shih, Tien-Mo; Chen, Zhong; Lin, Yue

    2018-04-01

    We investigate the cryogenic external quantum efficiency (EQE) for some InGaN light-emitting diodes with different indium contents. We observe a monotonic decrease in EQE with the increasing forward current before the "U-turn" point, beyond which the thermal effect increases the EQE. We discover positive dependences among the droop rate (χ), differential electrical resistance (Rd), and indium content. Also, χ and Rd of individual green samples shift correspondingly during the aging test, when the Mg ions are activated at high injection density and diffuse into the active region. Considering the fact that both In and Mg ions would introduce point defects (PDs), we proposed a model that reveals the mechanism of interplay between PDs and carriers. PDs serve as both energy traps and non-radiative recombination centers. They attract and confine carriers, leading to an increase in Rd and a decrease in EQE.

  17. Structural and optical properties of semi-polar (11-22) InGaN/GaN green light-emitting diode structure

    Science.gov (United States)

    Zhao, Guijuan; Wang, Lianshan; Li, Huijie; Meng, Yulin; Li, Fangzheng; Yang, Shaoyan; Wang, Zhanguo

    2018-01-01

    Semi-polar (11-22) InGaN multiple quantum well (MQW) green light-emitting diode (LED) structures have been realized by metal-organic chemical vapor deposition on an m-plane sapphire substrate. By introducing double GaN buffer layers, we improve the crystal quality of semi-polar (11-22) GaN significantly. The vertical alignment of the diffraction peaks in the (11-22) X-ray reciprocal space mapping indicates the fully strained MQW on the GaN layer. The photoluminescence spectra of the LED structure show stronger emission intensity along the [1-100] InGaN/GaN direction. The electroluminescence emission of the LED structure is very broad with peaks around 550 nm and 510 nm at the 100 mA current injection for samples A and B, respectively, and exhibits a significant blue-shift with increasing drive current.

  18. Characterization of a time-resolved non-contact scanning diffuse optical imaging system exploiting fast-gated single-photon avalanche diode detection

    Energy Technology Data Exchange (ETDEWEB)

    Di Sieno, Laura, E-mail: laura.disieno@polimi.it; Dalla Mora, Alberto; Contini, Davide [Politecnico di Milano, Dipartimento di Fisica, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Wabnitz, Heidrun; Macdonald, Rainer [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Pifferi, Antonio [Politecnico di Milano, Dipartimento di Fisica, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Mazurenka, Mikhail [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Hannoversches Zentrum für Optische Technologien, Nienburger Str. 17, 30167 Hannover (Germany); Hoshi, Yoko [Department of Biomedical Optics, Medical Photonics Research Center, Hamamatsu University School of Medicine, Hamamatsu 431-3192 (Japan); Boso, Gianluca; Tosi, Alberto [Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Becker, Wolfgang [Becker and Hickl GmbH, Nahmitzer Damm 30, 12277 Berlin (Germany); Martelli, Fabrizio [Dipartimento di Fisica e Astronomia dell’Università degli Studi di Firenze, Via G. Sansone 1, Sesto Fiorentino, Firenze 50019 (Italy)

    2016-03-15

    We present a system for non-contact time-resolved diffuse reflectance imaging, based on small source-detector distance and high dynamic range measurements utilizing a fast-gated single-photon avalanche diode. The system is suitable for imaging of diffusive media without any contact with the sample and with a spatial resolution of about 1 cm at 1 cm depth. In order to objectively assess its performances, we adopted two standardized protocols developed for time-domain brain imagers. The related tests included the recording of the instrument response function of the setup and the responsivity of its detection system. Moreover, by using liquid turbid phantoms with absorbing inclusions, depth-dependent contrast and contrast-to-noise ratio as well as lateral spatial resolution were measured. To illustrate the potentialities of the novel approach, the characteristics of the non-contact system are discussed and compared to those of a fiber-based brain imager.

  19. Tradeoff between laser diodes and light-emitting diodes (LEDs) for the common weapon control system

    Science.gov (United States)

    Greenwell, R. A.

    1982-07-01

    The use of laser diodes or light emitting diodes (LEDs) for the ground-launched cruise missile (GLCM) is comparatively evaluated. Source characteristics of interest, including radiated power output, spectral width and peak emission, modulation bandwidth, size coupling efficiency, lifetime, rise time, and price, are presented for noncoherent LED and the coherent laser diode. The advantages and disadvantages of laser diodes and LEDs are briefly discussed, and nuclear explosion effects on these instruments, including catastrophic damage, transient ionization effects, and permanent degradation, are summarized. A link analysis of the cable parameters required for the GLCM fiber optic data link is given, arriving at power levels consistent with a LED-PIN link. Two LEDs which meet these requirements are briefly discussed.

  20. Vortex diode jet

    Science.gov (United States)

    Houck, Edward D.

    1994-01-01

    A fluid transfer system that combines a vortex diode with a jet ejector to transfer liquid from one tank to a second tank by a gas pressurization method having no moving mechanical parts in the fluid system. The vortex diode is a device that has a high resistance to flow in one direction and a low resistance to flow in the other.

  1. Ultrafast photoconductor detector-laser-diode transmitter

    International Nuclear Information System (INIS)

    Wang, C.L.; Davis, B.A.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.

    1987-01-01

    We report the results of an experiment in which we used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When we irradiated the neutron-damaged Cr-doped GaAs detector with 17-MeV electron beams, the temporal response was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. We are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

  2. Ultrafast photoconductive detector-laser-diode transmitter

    International Nuclear Information System (INIS)

    Wang, C.L.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.; Davis, B.A.

    1987-01-01

    The authors report the results of an experiment in which they used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When they irradiated the neutron-damaged Cr-doped Ga/As detector with 17-MeV electron beams, the temporal response of was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. They are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

  3. Effect of nitrogen doping on the structural, optical and electrical properties of indium tin oxide films prepared by magnetron sputtering for gallium nitride light emitting diodes

    Science.gov (United States)

    Tian, Lifei; Cheng, Guoan; Wang, Hougong; Wu, Yulong; Zheng, Ruiting; Ding, Peijun

    2017-01-01

    The indium tin oxide (ITO) films are prepared by the direct current magnetron sputtering technology with an ITO target in a mixture of argon and nitrogen gas at room temperature. The blue transmittance at 455 nm rises from 63% to 83% after nitrogen doping. The resistivity of the ITO film reduces from 4.6 × 10-3 (undoped film) to 5.7 × 10-4 Ω cm (N-doped film). The X-ray photoelectron spectroscopy data imply that the binding energy of the In3d5/2 peak is declined 0.05 eV after nitrogen doping. The high resolution transmission electron microscope images show that the nitrogen loss density of the GaN/ITO interface with N-doped ITO film is smaller than that of the GaN/ITO interface with undoped ITO film. The forward turn-on voltage of gallium nitride light emitting diode reduces by 0.5 V after nitrogen doping. The fabrication of the N-doped ITO film is conducive to modify the N component of the interface between GaN and ITO layer.

  4. Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-07-07

    The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6° through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350 mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

  5. Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

    International Nuclear Information System (INIS)

    Zhang, Yonghui; Wei, Tongbo; Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin

    2014-01-01

    The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6° through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350 mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

  6. Optics

    CERN Document Server

    Mathieu, Jean Paul

    1975-01-01

    Optics, Parts 1 and 2 covers electromagnetic optics and quantum optics. The first part of the book examines the various of the important properties common to all electromagnetic radiation. This part also studies electromagnetic waves; electromagnetic optics of transparent isotropic and anisotropic media; diffraction; and two-wave and multi-wave interference. The polarization states of light, the velocity of light, and the special theory of relativity are also examined in this part. The second part is devoted to quantum optics, specifically discussing the classical molecular theory of optical p

  7. Next generation diode lasers with enhanced brightness

    Science.gov (United States)

    Ried, S.; Rauch, S.; Irmler, L.; Rikels, J.; Killi, A.; Papastathopoulos, E.; Sarailou, E.; Zimer, H.

    2018-02-01

    High-power diode lasers are nowadays well established manufacturing tools in high power materials processing, mainly for tactile welding, surface treatment and cladding applications. Typical beam parameter products (BPP) of such lasers range from 30 to 50 mm·mrad at several kilowatts of output power. TRUMPF offers a product line of diode lasers to its customers ranging from 150 W up to 6 kW of output power. These diode lasers combine high reliability with small footprint and high efficiency. However, up to now these lasers are limited in brightness due to the commonly used spatial and coarse spectral beam combining techniques. Recently diode lasers with enhanced brightness have been presented by use of dense wavelength multiplexing (DWM). In this paper we report on TRUMPF's diode lasers utilizing DWM. We demonstrate a 2 kW and a 4 kW system ideally suited for fine welding and scanner welding applications. The typical laser efficiency is in the range of 50%. The system offers plug and play exchange of the fiber beam delivery cable, multiple optical outputs and integrated cooling in a very compact package. An advanced control system offers flexible integration in any customer's shop floor environment and includes industry 4.0 capabilities (e.g. condition monitoring and predictive maintenance).

  8. Suppressed power saturation due to optimized optical confinement in 9xx nm high-power diode lasers that use extreme double asymmetric vertical designs

    Science.gov (United States)

    Kaul, T.; Erbert, G.; Maaßdorf, A.; Knigge, S.; Crump, P.

    2018-03-01

    Broad area lasers with novel extreme double asymmetric structure (EDAS) vertical designs featuring increased optical confinement in the quantum well, Γ, are shown to have improved temperature stability without compromising series resistance, internal efficiency or losses. Specifically, we present here vertical design considerations for the improved continuous wave (CW) performance of devices operating at 940 nm, based on systematically increasing Γ from 0.26% to 1.1%, and discuss the impact on power saturation mechanisms. The results indicate that key power saturation mechanisms at high temperatures originate in high threshold carrier densities, which arise in the quantum well at low Γ. The characteristic temperatures, T 0 and T 1, are determined under short pulse conditions and are used to clarify the thermal contribution to power limiting mechanisms. Although increased Γ reduces thermal power saturation, it is accompanied by increased optical absorption losses in the active region, which has a significant impact on the differential external quantum efficiency, {η }{{diff}}. To quantify the impact of internal optical losses contributed by the quantum well, a resonator length-dependent simulation of {η }{{diff}} is performed and compared to the experiment, which also allows the estimation of experimental values for the light absorption cross sections of electrons and holes inside the quantum well. Overall, the analysis enables vertical designs to be developed, for devices with maximized power conversion efficiency at high CW optical power and high temperatures, in a trade-off between absorption in the well and power saturation. The best balance to date is achieved in devices using EDAS designs with {{Γ }}=0.54 % , which deliver efficiencies of 50% at 14 W optical output power at an elevated junction temperature of 105 °C.

  9. Diode-laser-illuminated automotive lamp systems

    Science.gov (United States)

    Marinelli, Michael A.; Remillard, Jeffrey T.

    1998-05-01

    We have utilized the high brightness of state-of-the-art diode laser sources, and a variety of emerging optical technologies to develop a new class of thin, uniquely styled automotive brake and signal lamps. Using optics based on thin (5 mm) plastic sheets, these lamps provide appearance and functional advantages not attainable with traditional automotive lighting systems. The light is coupled into the sheets using a 1 mm diameter glass fiber, and manipulated using refraction and reflection from edges, surfaces, and shaped cut-outs. Light can be extracted with an efficiency of approximately 50% and formed into a luminance distribution that meets the Society of Automotive Engineers (SAE) photometric requirements. Prototype lamps using these optics have been constructed and are less than one inch in thickness. Thin lamps reduce sheet metal costs, complexity, material usage, weight, and allow for increased trunk volume. In addition, these optics enhance lamp design flexibility. When the lamps are not energized, they can appear body colored, and when lighted, the brightness distribution across the lamp can be uniform or structured. A diode laser based brake lamp consumes seven times less electrical power than one using an incandescent source and has instant on capability. Also, diode lasers have the potential to be 10-year/150,000 mile light sources.

  10. Powerful infrared emitting diodes

    Directory of Open Access Journals (Sweden)

    Kogan L. M.

    2012-02-01

    Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.

  11. Wear resistance studies of an austempered ductile iron with the aid of a single pass grooving pendulum; Estudo do comportamento em desgate de um ferro fundido nodular austemperado atraves da tecnica da tecnica de esclerometria pendular

    Energy Technology Data Exchange (ETDEWEB)

    Velez, J.M.; Tschiptschin, A.P. [Sao Paulo Univ., SP (Brazil). Escola Politecnica

    1995-12-31

    The abrasive wear resistance of an austempered ductile iron was studied with the aid of a single pass grooving pendulum. Specimens were austenitized at 860 deg C and austempered at 370 deg C for 30, 60, 90, 180 and 240 min. Austenite transformation kinetics was measured by quantitative metallography. Specimens for pendulum tests were gridded as squared based prisms (50 mm x 10 mm x 10 mm) and one of the faces submitted to metallographic polishing before the test. A hard metal cutting tool was used as abrasive. The absorbed energy as well as the loss of matter were measured. Scanning Electron Microscopy was used to analyze the surface topography of the scratched specimen. It was observed a maximum in the absorbed specific energy for the specimen treated for 60 min. with a microstructure of bainite ferrite plus plus 42% volume fraction of retained austenite. All other structures (ferrite plus carbides, ferrite plus lower contents of austenite and martensite plus austenite) gave lower values of absorbed specific energy. Observation of scratches and chips formed on the surface of the specimen can explain the above mentioned behaviour 12 refs., 11 figs., 2 tabs.

  12. Active stabilization of a diode laser injection lock

    Energy Technology Data Exchange (ETDEWEB)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep [Department of Physics, University of Washington, P.O. Box 351560, Seattle, Washington 98195-1560 (United States)

    2016-06-15

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  13. Active stabilization of a diode laser injection lock.

    Science.gov (United States)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-06-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  14. Active stabilization of a diode laser injection lock

    International Nuclear Information System (INIS)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-01-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  15. Dichroic mirror for diode pumped YAG:Nd-laser

    DEFF Research Database (Denmark)

    Dinca, Andreea; Skettrup, Torben; Lupei, V.

    1996-01-01

    The paper describes the design and realization of a dichroic mirror for a diode pumped YAG:Nd laser. The mirror is deposed on an optical glass substrate and works in optical contact with the laser crystal. The design was performed by admittance matching of the basic stack with the adjacent media...

  16. Enhancing optical power of GaN-based light-emitting diodes by nanopatterning on indium tin oxide with tunable fill factor using multiple-exposure nanosphere-lens lithography

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo; Chen, Yu; Zhen, Aigong; Shan, Liang; Zhao, Yun; Hu, Qiang; Li, Jinmin; Wang, Junxi [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-11-21

    In this study, the multiple-exposure nanosphere-lens lithography method utilizing the polystyrene nanospheres with focusing behavior is investigated and introduced to fabricate diverse photonic crystals (PCs) on indium tin oxide to enhance the optical output power of GaN-based light-emitting diode (LED). Simulated results indicate that the focused light intensity decreases with increasing tilted angle due to the shadow effect introduced by adjacent nanospheres. The fill factor of nanopattern is tunable by controlling tilted angles and exposure times. To attain quadruple PC without overlapping patterns, mathematical calculation model is used to define the optimum range of tilted angles. Angular emission patterns and three-dimensional finite-difference time domain simulated results indicate that the enhanced light extraction of PC LEDs results mainly from diffused scattering effects, and the diffraction effects of PC on light extracted efficiency increase with the increase of fill factor. Furthermore, it is confirmed that the multiple PC can extract more light from GaN into air than common PC with same period and fill factor.

  17. Deep modulation of second-harmonic light by wavelength detuning of a laser diode

    DEFF Research Database (Denmark)

    Christensen, Mathias; Hansen, Anders Kragh; Noordegraaf, Danny

    2017-01-01

    Power modulated visible lasers are interesting for a number of applications within areas such as laser displays and medical laser treatments. In this paper, we present a system for modulating the second-harmonic light generated by single-pass frequency doubling of a distributed feedback (DFB....... The bandwidth of the modulation is limited by the electronics. This method has the potential to decrease the size as well as cost of modulated visible lasers. The achievable optical powers will increase as DFB MOPAs are further developed. (C) 2017 Optical Society of America...

  18. Optics

    CERN Document Server

    Fincham, W H A

    2013-01-01

    Optics: Ninth Edition Optics: Ninth Edition covers the work necessary for the specialization in such subjects as ophthalmic optics, optical instruments and lens design. The text includes topics such as the propagation and behavior of light; reflection and refraction - their laws and how different media affect them; lenses - thick and thin, cylindrical and subcylindrical; photometry; dispersion and color; interference; and polarization. Also included are topics such as diffraction and holography; the limitation of beams in optical systems and its effects; and lens systems. The book is recommen

  19. A practical guide to handling laser diode beams

    CERN Document Server

    Sun, Haiyin

    2015-01-01

    This book offers the reader a practical guide to the control and characterization of laser diode beams.  Laser diodes are the most widely used lasers, accounting for 50% of the global laser market.  Correct handling of laser diode beams is the key to the successful use of laser diodes, and this requires an in-depth understanding of their unique properties. Following a short introduction to the working principles of laser diodes, the book describes the basics of laser diode beams and beam propagation, including Zemax modeling of a Gaussian beam propagating through a lens.  The core of the book is concerned with laser diode beam manipulations: collimating and focusing, circularization and astigmatism correction, coupling into a single mode optical fiber, diffractive optics and beam shaping, and manipulation of multi transverse mode beams.  The final chapter of the book covers beam characterization methods, describing the measurement of spatial and spectral properties, including wavelength and linewidth meas...

  20. Spectroscopic amplifier for pin diode

    International Nuclear Information System (INIS)

    Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R.

    2014-10-01

    The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

  1. Optics

    CERN Document Server

    Fincham, W H A

    2013-01-01

    Optics: Eighth Edition covers the work necessary for the specialization in such subjects as ophthalmic optics, optical instruments and lens design. The text includes topics such as the propagation and behavior of light; reflection and refraction - their laws and how different media affect them; lenses - thick and thin, cylindrical and subcylindrical; photometry; dispersion and color; interference; and polarization. Also included are topics such as diffraction and holography; the limitation of beams in optical systems and its effects; and lens systems. The book is recommended for engineering st

  2. Optical and structural properties of InGaN/GaN short-period superlattices for the active region of light- emitting diodes

    International Nuclear Information System (INIS)

    Kryzhanovskaya, N. V.; Lundin, W. V.; Nikolaev, A. E.; Tsatsul'nikov, A. F.; Sakharov, A. V.; Pavlov, M. M.; Cherkachin, N. A.; Hytch, M. J.; Valkovsky, G. A.; Yagovkina, M. A.; Usov, S. O.

    2010-01-01

    The results of the study of structural and optical properties of short-period InGaN/GaN superlattices synthesized by MOCVD on sapphire substrates are presented. To form the superlattices, the method of periodic interruption of the growth of the InGaN layer with hydrogen supply into the reactor was used. It is shown that, with the use of the suggested method, an InGaN/GaN periodic structure with the developed interfaces and regions of joining the neighboring InGaN layers not correlated in a vertical direction is formed. The formation of such regions leads to a heavy dependence of the shape of the emission spectra of the super-lattices on the number of periods in the range of 400-470 nm.

  3. Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy

    KAUST Repository

    Lorenz, K.

    2010-09-16

    Eu-doped GaN was grown by organometallic vapor phase epitaxy at temperatures from 900 to 1100 °C. Eu incorporation is influenced by temperature with the highest concentration found for growth at 1000 °C. In all samples, Eu is incorporated entirely on substitutional Ga sites with a slight displacement which is highest (∼0.2 Å) in the sample grown at 900 °C and mainly directed along the c-axis. The major optical Eu3+ centers are identical for in situdoped and ion-implanted samples after high temperature and pressure annealing. The dominant Eu3+luminescence lines are attributed to isolated, substitutional Eu.

  4. Kilowatt average power 100 J-level diode pumped solid state laser

    Czech Academy of Sciences Publication Activity Database

    Mason, P.; Divoký, Martin; Ertel, K.; Pilař, Jan; Butcher, T.; Hanuš, Martin; Banerjee, S.; Phillips, J.; Smith, J.; De Vido, M.; Lucianetti, Antonio; Hernandez-Gomez, C.; Edwards, C.; Mocek, Tomáš; Collier, J.

    2017-01-01

    Roč. 4, č. 4 (2017), s. 438-439 ISSN 2334-2536 R&D Projects: GA MŠk LO1602; GA MŠk LM2015086 Institutional support: RVO:68378271 Keywords : diode-pumped * solid state * laser Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 7.727, year: 2016

  5. Fourier-transform optical microsystems

    Science.gov (United States)

    Collins, S. D.; Smith, R. L.; Gonzalez, C.; Stewart, K. P.; Hagopian, J. G.; Sirota, J. M.

    1999-01-01

    The design, fabrication, and initial characterization of a miniature single-pass Fourier-transform spectrometer (FTS) that has an optical bench that measures 1 cm x 5 cm x 10 cm is presented. The FTS is predicated on the classic Michelson interferometer design with a moving mirror. Precision translation of the mirror is accomplished by microfabrication of dovetailed bearing surfaces along single-crystal planes in silicon. Although it is miniaturized, the FTS maintains a relatively high spectral resolution, 0.1 cm-1, with adequate optical throughput.

  6. Constructing Diodes and Transistors for Ultracold Atoms

    Science.gov (United States)

    Pepino, Ronald; Cooper, John; Anderson, Dana; Holland, Murray

    2008-05-01

    The ultracold atom-optical analogy to electronic systems is presented, along with the master equation formalism that is applied to this novel physical context of system-reservoir interactions. The proposed formalism lends itself quite readily to not only the study of atomtronic systems, but also transport properties of ultracold atoms in optical lattices. We demonstrate how these systems can be configured so that they emulate the behavior of the electronic diode, field effect transistor (FET), and bipolar junction transistor (BJT). The behavior of simple logic gates: namely, the AND and OR gates are follow as direct consequences of the atomtronic BJTs.

  7. Investigation of MIM Diodes for RF Applications

    KAUST Repository

    Khan, Adnan

    2015-05-01

    Metal Insulator Metal (MIM) diodes that work on fast mechanism of tunneling have been used in a number of very high frequency applications such as (Infra-Red) IR detectors and optical Rectennas for energy harvesting. Their ability to operate under zero bias condition as well as the possibility of realizing them through printing makes them attractive for (Radio Frequency) RF applications. However, MIM diodes have not been explored much for RF applications. One reason preventing their widespread RF use is the requirement of a very thin oxide layer essential for the tunneling operation that requires sophisticated nano-fabrication processes. Another issue is that the reliability and stable performance of MIM diodes is highly dependent on the surface roughness of the metallic electrodes. Finally, comprehensive RF characterization has not been performed for MIM diodes reported in the literature, particularly from the perspective of their integration with antennas as well as their rectification abilities. In this thesis, various metal deposition methods such as sputtering, electron beam evaporation, and Atomic Layer Deposition (ALD) are compared in pursuit of achieving low surface roughness. It is worth mentioning here that MIM diodes realized through ALD method have been presented for the first time in this thesis. Amorphous metal alloy have also been investigated in terms of their low surface roughness. Zinc-oxide has been investigated for its suitability as a thin dielectric layer for MIM diodes. Finally, comprehensive RF characterization of MIM diodes has been performed in two ways: 1) by standard S-parameter methods, and 2) by investigating their rectification ability under zero bias operation. It is concluded from the Atomic Force Microscopy (AFM) imaging that surface roughness as low as sub 1 nm can be achieved reliably from crystalline metals such as copper and platinum. This value is comparable to surface roughness achieved from amorphous alloys, which are non

  8. Construction of a Visible Diode Laser Source for Free Radical Photochemistry and Spectroscopy Experiments

    Science.gov (United States)

    Newman, Bronjelyn; Halpern, Joshua B.

    1997-01-01

    Tunable diode lasers are reliable sources of narrow-band light and comparatively cheap. Optical feedback simplifies frequency tuning of the laser diodes. We are building an inexpensive diode laser system incorporating optical feedback from a diffraction grating. The external optical cavity can be used with lasers that emit between 2 and 100 mW, and will also work if they are pulsed, although this will significantly degrade the bandwidth. The diode laser output power and bandwidth are comparable to CW dye lasers used in kinetics and dynamics experiments. However, their cost and maintenance will be much less as will alignment time. We intend to use the diode lasers to investigate CN and C2 kinetics as well as to study dissociation dynamics of atmospherically important molecules.

  9. System and method for high power diode based additive manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    El-Dasher, Bassem S.; Bayramian, Andrew; Demuth, James A.; Farmer, Joseph C.; Torres, Sharon G.

    2018-01-02

    A system is disclosed for performing an Additive Manufacturing (AM) fabrication process on a powdered material forming a substrate. The system may make use of a diode array for generating an optical signal sufficient to melt a powdered material of the substrate. A mask may be used for preventing a first predetermined portion of the optical signal from reaching the substrate, while allowing a second predetermined portion to reach the substrate. At least one processor may be used for controlling an output of the diode array.

  10. System and method for high power diode based additive manufacturing

    Science.gov (United States)

    El-Dasher, Bassem S.; Bayramian, Andrew; Demuth, James A.; Farmer, Joseph C.; Torres, Sharon G.

    2016-04-12

    A system is disclosed for performing an Additive Manufacturing (AM) fabrication process on a powdered material forming a substrate. The system may make use of a diode array for generating an optical signal sufficient to melt a powdered material of the substrate. A mask may be used for preventing a first predetermined portion of the optical signal from reaching the substrate, while allowing a second predetermined portion to reach the substrate. At least one processor may be used for controlling an output of the diode array.

  11. Generation conditions of CW Diode Laser Sustained Plasma

    Science.gov (United States)

    Nishimoto, Koji; Matsui, Makoto; Ono, Takahiro

    2016-09-01

    Laser sustained plasma was generated using 1 kW class continuous wave diode laser. The laser beam was focused on the seed plasma generated by arc discharge in 1 MPa xenon lamp. The diode laser has advantages of high energy conversion efficiency of 80%, ease of maintenance, compact size and availability of conventional quartz based optics. Therefore, it has a prospect of further development compared with conventional CO2 laser. In this study, variation of the plasma shape caused by laser power is observed and also temperature distribution in the direction of plasma radius is measured by optical emission spectroscopy.

  12. Diode laser pumping

    International Nuclear Information System (INIS)

    Skagerlund, L.E.

    1975-01-01

    A diode laser is pumped or pulsed by a repeated capacitive discharge. A capacitor is periodically charged from a dc voltage source via a transformer, the capacitor being discharged through the diode laser via a controlled switching means after one or more charging periods. During a first interval of each charging period the transformer, while unloaded, stores a specific amount of energy supplied from the dc voltage source. During a subsequent interval of the charging period said specific amount of energy is transmitted from the transformer to the capacitor. The discharging of the capacitor takes place during a first interval of a charging period. (auth)

  13. Optical properties of crystals doped with Sm3+ or Dy3+ relevant to potential InGaN/GaN laser diode-pumped visible laser operation: A comparative study

    Science.gov (United States)

    Ryba-Romanowski, W.; Strzęp, A.; Lisiecki, R.; Berkowski, M.

    2014-05-01

    Results of detailed spectroscopic investigation of Sm3+ and Dy3+ ions incorporated in crystal structures of Yal YAl3(BO3)4, LiNbO3, Gd3Ga5O12, Gd2SiO5, Lu2SiO5 and (Gd, Lu)2SiO5 are reported and discussed. The impact of the hosts on transition intensities and excited state relaxation dynamics of incorporated luminescent ions was examined. Distribution of luminescence intensity among spectral bands in terms of luminescence branching ratios was evaluated based on numerical integration of luminescence bands. Intensities of UV and blue absorption bands potentially useful for optical pumping were determined quantitatively in units of absorption cross section. The most intense luminescence bands related to potential laser transitions 4 G 5/2 → 6 H 7/2 of Sm3+ around 600 nm and 4 F 9/2 → 6 H 13/2 of Dy3+ around 580 nm were calibrated in units of emission cross section. Evaluated peak values of emission cross section range from 0.43 × 10-20 cm2 for Sm3+ in (Gd, Lu)2SiO5 to 1.17 × 10-20 cm2 for Sm3+ in LiNbO3. Those for dysprosium-doped crystals range from 0.63 × 10-20 cm2 for LiNbO3:Dy3+ to 2.0 × 10-20 cm2 for Yal YAl3(BO3)4:Dy3+. It follows from these considerations that samarium-doped crystals show promise for laser application owing to the combination of a strong absorption that matches radiation of commercial laser diodes emitting near 405 nm and long luminescence lifetime. Major shortcoming of dysprosium-doped crystals results from a weak intensity of absorption bands available for optical pumping near 450 nm and 385 nm combined with relatively strong self-quenching of luminescence.

  14. High-power green diode laser systems for biomedical applications

    DEFF Research Database (Denmark)

    Müller, André

    spectroscopy and imaging, and fluorescence measurements. A major challenge in diode laser technology is to obtain high-power laser emission at wavelengths green spectral range is of high importance, for example, in dermatology or for direct pumping of ultrashort pulsed lasers...... in conjunction with optical coherence tomography, two-photon microscopy or coherent anti-Stokes Raman scattering microscopy. In order to provide high-power green diode laser emission, nonlinear frequency conversion of state-of-the-art near-infrared diode lasers represents a necessary means. However, the obtained...... output power of frequency doubled single emitters is limited by thermal effects potentially resulting in laser degradation and failure. In this work new concepts for power scaling of visible diode laser systems are introduced that help to overcome current limitations and enhance the application potential...

  15. Active graphene-silicon hybrid diode for terahertz waves.

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-05-11

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

  16. Active graphene–silicon hybrid diode for terahertz waves

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-01-01

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene–silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene–silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices. PMID:25959596

  17. Laser cooling of beryllium ions using a frequency-doubled 626 nm diode laser

    NARCIS (Netherlands)

    Cozijn, F.M.J.; Biesheuvel, J.; Flores, A.S.; Ubachs, W.M.G.; Blume, G.; Wicht, A.; Paschke, K.; Erbert, G.; Koelemeij, J.C.J.

    2013-01-01

    We demonstrate laser cooling of trapped beryllium ions at 313 nm using a frequency-doubled extended cavity diode laser operated at 626 nm, obtained by cooling a ridge waveguide diode laser chip to -31°C. Up to 32 mW of narrowband 626 nm laser radiation is obtained. After passage through an optical

  18. Luminescence of the InGaN/GaN Blue Light-Emitting Diodes

    Science.gov (United States)

    2000-07-01

    UNCLASSIFIED Defense Technical Information Center Compilation Part Notice ADPO 11314 TITLE: Luminescence of the InGaN/GaN Blue Light -Emitting Diodes...ADP011332 UNCLASSIFIED Luminescence of the InGaN/GaN blue light -emitting diodes J. K. Sheu a), T. W. Yeh and G. C. Chi Optical Sciences Center, National

  19. Effect of the Bit Rate on the Pulses of the Laser Diodes | Ayadi ...

    African Journals Online (AJOL)

    The qualities required for Laser Diodes are their spatial and temporal coherence, and their performance in terms modulation. This paper presents the effect data rate of optical pulses delivered by diode laser using software COMSIS. Two types of modulation have been considered: direct modulation and external modulation.

  20. Visible laser and superluminescent diode based free space and underwater communications

    KAUST Repository

    Ooi, Boon S.

    2017-01-30

    We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.

  1. Deep diode atomic battery

    International Nuclear Information System (INIS)

    Anthony, T.R.; Cline, H.E.

    1977-01-01

    A deep diode atomic battery is made from a bulk semiconductor crystal containing three-dimensional arrays of columnar and lamellar P-N junctions. The battery is powered by gamma rays and x-ray emission from a radioactive source embedded in the interior of the semiconductor crystal

  2. Infrared diode laser spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Civiš, Svatopluk; Cihelka, Jaroslav; Matulková, Irena

    2010-01-01

    Roč. 18, č. 4 (2010), s. 408-420 ISSN 1230-3402 R&D Projects: GA AV ČR IAA400400705 Institutional research plan: CEZ:AV0Z40400503 Keywords : FTIR spectroscopy * absorption spectroscopy * laser diodes Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.027, year: 2010

  3. Quaternary InGaAsSb Thermophotovoltaic Diodes

    Energy Technology Data Exchange (ETDEWEB)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-03-09

    In{sub x}Ga{sub 1-x}As{sub y}Sb{sub 1-y} thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E{sub G} = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of {eta}{sub TPV} = 19.7% and PD =0.58 W/cm{sup 2} respectively for a radiator temperature of T{sub radiator} = 950 C, diode temperature of T{sub diode} = 27 C, and diode bandgap of E{sub G} = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is {eta}{sub TPV} = 28% and PD = 0.85W/cm{sup 2} at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V{sub OC} is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V{sub OC} and thus efficiency is limited by extrinsic recombination processes such as through bulk defects.

  4. V-shaped resonators for addition of broad-area laser diode arrays

    Science.gov (United States)

    Liu, Bo; Liu, Yun; Braiman, Yehuda Y.

    2012-12-25

    A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

  5. Atomic-resolution measurements with a new tunable diode laser-based interferometer

    DEFF Research Database (Denmark)

    Silver, R.M.; Zou, H.; Gonda, S.

    2004-01-01

    We develop a new implementation of a Michelson interferometer designed to make measurements with an uncertainty of less than 20 pm. This new method uses a tunable diode laser as the light source, with the diode laser wavelength continuously tuned to fix the number of fringes in the measured optical...... laser Michelson interferometer....... path. The diode laser frequency is measured by beating against a reference laser. High-speed, accurate frequency measurements of the beat frequency signal enables the diode laser wavelength to be measured with nominally 20-pm accuracy for the measurements described. The new interferometer design...

  6. Zinc oxide tetrapod nanocrystal diodes

    Science.gov (United States)

    Newton, Marcus Christian

    Advances in fabrication and analysis tools have allowed the synthesis and manipulation of functional materials with features comparable to fundamental physical length scales. Many interesting properties inherently due to quantum size effects have been observed in nanometre scale structures. It is hoped that these nanoscale structures will play a key role in future materials and devices that exploit their unique properties. Zinc oxide (ZnO) is a wide band-gap transparent and piezoelectric semiconductor material. It also has a large exciton binding energy which allows for stable ultraviolet light emission at room temperature. There are therefore foreseeable applications in optoelectronic devices which include ultraviolet photosensitive devices and light emitting diodes. Nanoscale structures formed from ZnO are interesting as they possess many of the properties inherent form the bulk but are also subject to various quantum size effects that may occur at the nanoscale. To date, the study of ZnO nanostructures is a relatively recent endeavour with the vast majority of reports being made within the last five years. ZnO is unique in that it forms a family of nanoscale structures. These structures include nanoscale wires, rods, hexagons, tetrapods, ribbons, rings, flowers and helixes. This work is focussed on the study of zinc oxide tetrapod crystalline nanoscale structures and their devices. We have synthesised ZnO tetrapods using chemical vapour transport techniques. Photoluminescence characterisation revealed the presence of optically active surface defects that could be quenched with a simple surface treatment. We have also for the first time observed resonant cavity modes in a single ZnO tetrapod nanocrystal. An ultraviolet sensitive Schottky diode was fabricated from a single ZnO tetrapod using focussed ion-beam assisted deposition techniques. The device characteristics observed were modelled and successfully shown to result from an illumination induced reduction in

  7. Photoporation and cell transfection using a violet diode laser

    Science.gov (United States)

    Paterson, L.; Agate, B.; Comrie, M.; Ferguson, R.; Lake, T. K.; Morris, J. E.; Carruthers, A. E.; Brown, C. T. A.; Sibbett, W.; Bryant, P. E.; Gunn-Moore, F.; Riches, A. C.; Dholakia, Kishan

    2005-01-01

    The introduction and subsequent expression of foreign DNA inside living mammalian cells (transfection) is achieved by photoporation with a violet diode laser. We direct a compact 405 nm laser diode source into an inverted optical microscope configuration and expose cells to 0.3 mW for 40 ms. The localized optical power density of ~1200 MW/m2 is six orders of magnitude lower than that used in femtosecond photoporation (~104 TW/m2). The beam perforates the cell plasma membrane to allow uptake of plasmid DNA containing an antibiotic resistant gene as well as the green fluorescent protein (GFP) gene. Successfully transfected cells then expand into clonal groups which are used to create stable cell lines. The use of the violet diode laser offers a new and simple poration technique compatible with standard microscopes and is the simplest method of laser-assisted cell poration reported to date.

  8. Study of Absorption Characteristics of the Total Saponins from Radix Ilicis Pubescentis in an In Situ Single-Pass Intestinal Perfusion (SPIP Rat Model by Using Ultra Performance Liquid Chromatography (UPLC

    Directory of Open Access Journals (Sweden)

    Guojun Kuang

    2017-11-01

    Full Text Available In contrast to the extensively reported therapeutic activities, far less attention has been paid to the intestinal absorption of the total saponins from Radix Ilicis Pubescentis (in Chinese Mao-Dong-Qing, MDQ. This study aimed to investigate the intestinal absorption characteristics of ilexgenin A (C1, ilexsaponin A1 (C2, ilexsaponin B1 (C3, ilexsaponin B2 (C4, ilexsaponin B3 (DC1, and ilexoside O (DC2 when administrated with the total saponins from MDQ (MDQ-TS. An UPLC method for simultaneous determination of C1, C2, C3, C4, DC1, and DC2 in intestinal outflow perfusate was developed and validated. The absorption characteristics of MDQ-TS were investigated by evaluating the effects of intestinal segments, drug concentration, P-glycoprotein (P-gp inhibitor (verapomil, endocytosis inhibitor (amantadine and ethylene diamine tetraacetic acid (EDTA, tight junction modulator on the intestinal transportation of MDQ-TS by using a single-pass intestinal perfusion (SPIP rat model, and the influence of co-existing components on the intestinal transport of the six saponins was discussed. The results showed that effective apparent permeability (Papp of C1, C2, C3, C4, and DC2 administrated in MDQ-TS form had no segment-dependent changes at low and middle dosage levels. C1, C2, C3, D4, DC1, and DC2 administrated in MDQ-TS form all exhibited excellent transmembrane permeability with Papp > 0.12 × 10−2 cm·min−1. Meanwhile, Papp and effective absorption rate constant (Ka values for the most saponins showed concentration dependence and saturation characteristics. After combining with P-gp inhibitor of verapamil, Papp of C2, C3, and DC1 in MDQ-TS group was significantly increased up to about 2.3-fold, 1.4-fold, and 3.4-fold, respectively in comparison to that of non-verapamil added group. Verapamil was found to improve the absorption of C2, C3, and DC1, indicating the involvement of an active transport mechanism in the absorption process. Compared with the

  9. Optical Computing With Nonlinear Optics

    Science.gov (United States)

    Khitrova, Galina; Gibbs, Hyatt; Peyghambarian, Nasser

    1987-01-01

    Nonlinear optics is becoming a new thrust in the field of optical computing and signal processing.14 Optical nonlinearity makes the device's transmission intensity dependent, so one can obtain the thresholding needed for logic decisionmaking. Thresholding is essential to digital optical computing, neural nets, and associative memories. GaAs etalons exhibit many of the characteristics desirable for the nonlinear devices including high speed (picosecond) and diode-laser compatability. However, demonstrations of the use of nonlinear decisionmaking for optical computing have used ZnS or ZnSe interference filters. They are slow (millisecond), but they can be used with the visible 514.5-nm output of an argon laser. We have used such filters to demonstrate all-optical logic operations, one-bit addition by symbolic substitution, and recognition of a three-spot pattern in an arbitrary 2 x 8 array of input beams. The application to associative memories is under study.

  10. Thermal characterization of gallium nitride p-i-n diodes

    Science.gov (United States)

    Dallas, J.; Pavlidis, G.; Chatterjee, B.; Lundh, J. S.; Ji, M.; Kim, J.; Kao, T.; Detchprohm, T.; Dupuis, R. D.; Shen, S.; Graham, S.; Choi, S.

    2018-02-01

    In this study, various thermal characterization techniques and multi-physics modeling were applied to understand the thermal characteristics of GaN vertical and quasi-vertical power diodes. Optical thermography techniques typically used for lateral GaN device temperature assessment including infrared thermography, thermoreflectance thermal imaging, and Raman thermometry were applied to GaN p-i-n diodes to determine if each technique is capable of providing insight into the thermal characteristics of vertical devices. Of these techniques, thermoreflectance thermal imaging and nanoparticle assisted Raman thermometry proved to yield accurate results and are the preferred methods of thermal characterization of vertical GaN diodes. Along with this, steady state and transient thermoreflectance measurements were performed on vertical and quasi-vertical GaN p-i-n diodes employing GaN and Sapphire substrates, respectively. Electro-thermal modeling was performed to validate measurement results and to demonstrate the effect of current crowding on the thermal response of quasi-vertical diodes. In terms of mitigating the self-heating effect, both the steady state and transient measurements demonstrated the superiority of the tested GaN-on-GaN vertical diode compared to the tested GaN-on-Sapphire quasi-vertical structure.

  11. Modular package for cooling a laser diode array

    Science.gov (United States)

    Mundinger, David C.; Benett, William J.; Beach, Raymond J.

    1992-01-01

    A laser diode array is disclosed that includes a plurality of planar packages and active cooling. The laser diode array may be operated in a long duty cycle, or in continuous operation. A laser diode bar and a microchannel heat sink are thermally coupled in a compact, thin planar package having the laser diode bar located proximate to one edge. In an array, a number of such thin planar packages are secured together in a stacked configuration, in close proximity so that the laser diodes are spaced closely. The cooling means includes a microchannel heat sink that is attached proximate to the laser bar so that it absorbs heat generated by laser operation. To provide the coolant to the microchannels, each thin planar package comprises a thin inlet manifold and a thin outlet manifold connected to an inlet corridor and an outlet corridor. The inlet corridor comprises a hole extending through each of the packages in the array, and the outlet corridor comprises a hole extending through each of the packages in the array. The inlet and outlet corridors are connected to a conventional coolant circulation system. The laser diode array with active cooling has application as an optical pump for high power solid state lasers. Further, it can be incorporated in equipment such as communications devices and active sensors, and in military and space applications, and it can be useful in applications having space constraints and energy limitations.

  12. WDM Nanoscale Laser Diodes for Si Photonic Interconnects

    Science.gov (United States)

    2016-07-25

    formed on silicon platforms, such as SiN on SiO2, or other materials. The VCSEL also has key features needed for high speed, including low thermal...mounting on silicon . The nanoscale VCSELs can achieve small optical modes and present a compact laser diode that is also robust. In this work we have used...Report Title The goal of this work has been to develop nanoscale VCSELs for integration into various optical systems, including for mounting on silicon

  13. Injection Laser Diodes for Fiber Optic Communications.

    Science.gov (United States)

    1981-03-31

    am" and substituto ŕ.09 czW" Delete ".392 cm" and substitute ".394 ca,’ D/ MB07 - 0 0 4 - 116 - o __~ ELCTR0!NI-CS CC-UA~IMTD SCs-5i6 TECHICAL ...modiftsps the oboe . numnbered contlract as set forth In block 12. 2. DESCRIPTION OFAMENDAUNODIFICATION This Supplemental Agreement is enteredinto by the

  14. Ultraviolet Light Emitting Diode Optical Power Characterization

    Science.gov (United States)

    2014-03-01

    The heart of the driver board was an opamp , which operated off of the DAQ output voltage. The opamp created an isolated circuit with the power...then flowed from the power supply to the opamp to the UV LED. Each branch had a resistor and pin holes for electrical measurement in series with...with the available equipment. The oscilloscope could be used to show the trace and measure a voltage drop across a known resistance in line with the

  15. Comparison of laser diode response to pulsed electrical and radiative excitations

    International Nuclear Information System (INIS)

    Baggio, J.; Rainsant, J.M.; D'hose, C.; Lalande, P.; Musseau, O.; Leray, J.L.

    1996-01-01

    The authors have studied the electrical and optical response of two laser diodes under transient irradiation. Both diodes exhibit a positive photocurrent, which adds to the bias current, and a decrease of the optical power until extinction when dose rate is increased. Direct carrier generation in the laser cavity is a second order phenomena. The diode overall response is driven by both the substrate photocurrent and the transient conduction of current confinement regions, which decrease the net current density in the cavity and switches-off the laser emission. This behavior is in good agreement with pulsed electrical characterizations and 2D simulations

  16. High brightness diode lasers controlled by volume Bragg gratings

    Science.gov (United States)

    Glebov, Leonid

    2017-02-01

    Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

  17. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  18. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    International Nuclear Information System (INIS)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-01

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency (η TPV ) and a power density (PD) of η TPV = 19% and PD=0.58 W/cm 2 were measured for T radiator = 950 C and T diode = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be η TPV = 26% and PD = 0.75 W/cm 2 . These limits are extended to η TPV = 30% and PD = 0.85W/cm 2 if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are ∼10

  19. Advances in AlGaInN laser diode technology

    Science.gov (United States)

    Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Bockowski, Mike; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Kucharski, R.; Targowski, G.; Watson, S.; Kelly, A. E.

    2014-03-01

    The latest developments in AlGaInN laser diode technology are reviewed. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., i.e, 380nm, to the visible, i.e., 530nm, by tuning the indium content of the laser GaInN quantum well. Advantages of using Plasma assisted MBE (PAMBE) compared to more conventional MOCVD epitaxy to grow AlGaInN laser structures are highlighted. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of >100mW in the 400-420nm wavelength range that are suitable for telecom applications. Visible light communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Galliumnitride (GaN) blue laser diode is reported. High power operation of AlGaInN laser diodes is demonstrated with a single chip, AlGaInN laser diode `mini-array' with a common p-contact configuration at powers up to 2.5W cw at 410nm. Low defectivity and highly uniform GaN substrates allow arrays and bars of nitride lasers to be fabricated. GaN laser bars of up to 5mm with 20 emitters, mounted in a CS mount package, give optical powers up to 4W cw at ~410nm with a common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space and/or fibre optic system integration within a very small form-factor.

  20. Nonlinear Optics and Nonlinear Dynamics in Semiconductor Lasers Subject to External Optical Injection

    National Research Council Canada - National Science Library

    Simpson, Thomas

    2000-01-01

    ...) arrays, and analysis of chaotic dynamics that can be induced by optical injection. Under external optical injection, all semiconductor lasers tested, conventional edge emitting Fabry Perot laser diodes, VCSELs, and distributed feedback (DFB...

  1. Electrooptic modulation methods for high sensitivity tunable diode laser spectroscopy

    Science.gov (United States)

    Glenar, David A.; Jennings, Donald E.; Nadler, Shacher

    1990-01-01

    A CdTe phase modulator and low power RF sources have been used with Pb-salt tunable diode lasers operating near 8 microns to generate optical sidebands for high sensitivity absorption spectroscopy. Sweep averaged, first-derivative sample spectra of CH4 were acquired by wideband phase sensitive detection of the electrooptically (EO) generated carrier-sideband beat signal. EO generated beat signals were also used to frequency lock the TDL to spectral lines. This eliminates low frequency diode jitter, and avoids the excess laser linewidth broadening that accompanies TDL current modulation frequency locking methods.

  2. Characteristic of laser diode beam propagation through a collimating lens.

    Science.gov (United States)

    Xu, Qiang; Han, Yiping; Cui, Zhiwei

    2010-01-20

    A mathematical model of a laser diode beam propagating through a collimating lens is presented. Wave propagation beyond the paraxial approximation is studied. The phase delay of the laser diode wave in passing through the lens is analyzed in detail. The propagation optical field after the lens is obtained from the diffraction integral by the stationary phase method. The model is employed to predict the light intensity at various beam cross sections, and the computed intensity distributions are in a good agreement with the corresponding measurements.

  3. Optical properties of polymer nanocomposites

    Indian Academy of Sciences (India)

    Nanomaterials have emerged as an area of interest motivated by potential applications of these materials in light emitting diodes, solar cells, polarizers, light – stable colour filters, optical sensors, optical data communication and optical data storage. Nanomaterials are of particular interest as they combine the properties of ...

  4. Thin planar package for cooling an array of edge-emitting laser diodes

    Science.gov (United States)

    Mundinger, David C.; Benett, William J.

    1992-01-01

    A laser diode array is disclosed that includes a plurality of planar assemblies and active cooling of each assembly. The laser diode array may be operated in a long duty cycle, or in continuous operation. A laser diode bar and a microchannel heat sink are thermally coupled in a compact, thin planar assembly having the laser diode bar located proximate to one edge. In an array, a number of such thin planar assemblies are secured together in a stacked configuration, in close proximity so that the laser diodes are spaced closely. The cooling means includes a microchannel heat sink proximate to the laser diode bar to absorb heat generated by laser operation. To provide the coolant to the microchannels, each thin planar assembly comprises passageways that connect the microchannels to inlet and outlet corridors. Each inlet passageway may comprise a narrow slot that directs coolant into the microchannels and increases the velocity of flow therethrough. The corridors comprises holes extending through each of the assemblies in the array. The inlet and outlet corridors are connected to a conventional coolant circulation system. The laser diode array with active cooling has applications as an optical pump for high power solid state lasers, or by mating the diodes with fiber optic lenses. Further, the arrays can be useful in applications having space constraints and energy limitations, and in military and space applications. The arrays can be incorporated in equipment such as communications devices and active sensors.

  5. Low-cost photoacoustic imaging systems based on laser diode and light-emitting diode excitation

    Directory of Open Access Journals (Sweden)

    Qingkai Yao

    2017-07-01

    Full Text Available Photoacoustic imaging, an emerging biomedical imaging modality, holds great promise for preclinical and clinical researches. It combines the high optical contrast and high ultrasound resolution by converting laser excitation into ultrasonic emission. In order to generate photoacoustic signal efficiently, bulky Q-switched solid-state laser systems are most commonly used as excitation sources and hence limit its commercialization. As an alternative, the miniaturized semiconductor laser system has the advantages of being inexpensive, compact, and robust, which makes a significant effect on production-forming design. It is also desirable to obtain a wavelength in a wide range from visible to near-infrared spectrum for multispectral applications. Focussing on practical aspect, this paper reviews the state-of-the-art developments of low-cost photoacoustic system with laser diode and light-emitting diode excitation source and highlights a few representative installations in the past decade.

  6. Diode-pumped neodymium lasers

    Science.gov (United States)

    Albers, Peter

    1990-08-01

    Since the invention of diode lasers in the early 1960's there had been continuous investigations in laser diode pumped solid state lasers as has been reviewed in detail by a number of papers ( see e.g. [1] ). There are two main advantages of using diode lasers instead of flashlaraps as a pump source for solid state lasers: First the emission of the diode lasers matches well with the absorption bands of several Rare Earth ions that are doped in laser crystals ( mainly Nd3+, but also Er3, Tm3, Dy3', and others ) . This summary will report only about diode lasers at a wavelength of around BlOnm, which fits to an absorptionband of Nd3t Second diode lasers provide the possibility of longitudinally pumped configurations and therefore an excellent mode matching with the solid state laser mode. For both reasons the efficiency of a diode laser puniped solid state laser is nuch higher than of a flashlamp pumped one. Since the early 1980's a much wider interest in diode laser pumped solid state lasers arose. It was stimulated by the improved performance of the new generation of diode lasers in terms of reliability , operational lifetime and output power [21. Two important steps in direction to the diode lasers at present time were the developments of double hetero (DH) structure- and graded index separate confinement hetero (GrInSCH) structurediode lasers. In the same way the development of new production techniques were necessary to ensure the reliability of the diode lasers. Starting with the liquid phase epitaxy (LPE) the (GaAl)As structures are now grown by the molecular beam epitaxy (MBE), mainly used for very high precision laboratory investigations, and metal organic chemical vapour deposition (MOCVD), mainly used for commercial production. As a first commercial product SDL introduced a 100mW array in 1984. Since then the output power of the commercially available diode lasers increased by two orders of magnitude to lOW. These diode lasers are multi stripe bar arrays

  7. Polymer light emitting diodes

    International Nuclear Information System (INIS)

    Gautier-Thianche, Emmmanuelle

    1998-01-01

    We study sandwich type semiconducting polymer light emitting diodes; anode/polymer/cathode. ITO is selected as anode, this polymer is a blend of a commercially available polymer with a high hole transport ability: polyvinyl-carbazole and a laser dye: coumarin-515. Magnesium covered with silver is chosen for the anode. We study the influence of polymer thickness and coumarin doping ratio on electroluminescence spectrum, electric characteristics and quantum efficiency. An important drawback is that diodes lifetime remains low. In the second part of our study we determine degradations causes with X-Ray reflectivity experiments. It may be due to ITO very high roughness. We realize a new type of planar electroluminescent device: a channel type electroluminescent device in which polymer layer is inserted into an aluminium channel. Such a device is by far more stable than using classical sandwich structures with the same polymer composition: indeed, charges are generated by internal-field ionization and there is no injection from the electrode to the polymer. This avoids electrochemical reactions at electrodes, thus reducing degradations routes. (author) [fr

  8. Light Emitting Diode (LED)

    Science.gov (United States)

    1997-01-01

    A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique called photodynamic therapy, requires the surgeon to use tiny pinhead-size Light Emitting Diodes (LEDs) (a source releasing long wavelengths of light) to activate light-sensitive, tumor-treating drugs. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can also be used for hours at a time while still remaining cool to the touch. The LED probe consists of 144 tiny pinhead-size diodes, is 9-inches long, and about one-half-inch in diameter. The small balloon aids in even distribution of the light source. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The probe was developed for photodynamic cancer therapy by the Marshall Space Flight Center under a NASA Small Business Innovative Research program grant.

  9. Biosensing with Nanofluidic Diodes

    Science.gov (United States)

    Vlassiouk, Ivan; Kozel, Thomas R.; Siwy, Zuzanna S.

    2014-01-01

    Recently reported nanofluidic diodes with highly nonlinear current-voltage characteristics offer a unique possibility to construct different biosensors. These sensors are based on local changes of the surface charge on walls of single conical nanopores induced by binding of an analyte. The analyte binding can be detected as a change of the ion current rectification of single nanopores defined as a ratio of currents for voltages of one polarity, and currents for voltages of the opposite polarity. In this Article we provided both modeling and experimental studies of various biosensing routes based on monitoring changes of the rectification degree in nanofluidic diodes used as a biosensing platform. A prototype of a sensor for the capsular poly γ-D-glutamic acid (γDPGA) from Bacillus anthracis is presented. The nanopore used for the sensing was locally modified with the monoclonal antibody for γDPGA. The proof of principle of the rectification degree based sensing was further shown by preparation of sensors for avidin and streptavidin. Our devices also allowed for determination of isoelectric point of the minute amounts of proteins immobilized on the surface. PMID:19507907

  10. Advancements of ultra-high peak power laser diode arrays

    Science.gov (United States)

    Crawford, D.; Thiagarajan, P.; Goings, J.; Caliva, B.; Smith, S.; Walker, R.

    2018-02-01

    Enhancements of laser diode epitaxy in conjunction with process and packaging improvements have led to the availability of 1cm bars capable of over 500W peak power at near-infrared wavelengths (770nm to 1100nm). Advances in cooler design allow for multi-bar stacks with bar-to-bar pitches as low as 350μm and a scalable package architecture enabled a single diode assembly with total peak powers of over 1MegaWatt of peak power. With the addition of micro-optics, overall array brightness greater than 10kW/cm2 was achieved. Performance metrics of barbased diode lasers specifically engineered for high peak power and high brightness at wavelengths and pulse conditions commonly used to pump a variety of fiber and solid-state materials are presented.

  11. Atomic-resolution measurements with a new tunable diode laser-based interferometer

    DEFF Research Database (Denmark)

    Silver, R.M.; Zou, H.; Gonda, S.

    2004-01-01

    We develop a new implementation of a Michelson interferometer designed to make measurements with an uncertainty of less than 20 pm. This new method uses a tunable diode laser as the light source, with the diode laser wavelength continuously tuned to fix the number of fringes in the measured optical...... path. The diode laser frequency is measured by beating against a reference laser. High-speed, accurate frequency measurements of the beat frequency signal enables the diode laser wavelength to be measured with nominally 20-pm accuracy for the measurements described. The new interferometer design...... is lightweight and is mounted directly on an ultra-high vacuum scanning tunneling microscope capable of atomic resolution. We report the simultaneous acquisition of an atomic resolution image, while the relative lateral displacement of the tip along the sample distance is measured with the new tunable diode...

  12. Structural, optical spectroscopy, optical conductivity, dielectric ...

    Indian Academy of Sciences (India)

    13

    different methods of preparation [36-41]. The electrical insulator materials with low refractive index and low absorption are needed for various optical devices, such as low loss waveguides, resonators, photonic crystals, distributed Bragg reflectors, light-emitting diodes, passive splitters, biosensors, attenuators and filters ...

  13. Nanowire resonant tunneling diodes

    Science.gov (United States)

    Björk, M. T.; Ohlsson, B. J.; Thelander, C.; Persson, A. I.; Deppert, K.; Wallenberg, L. R.; Samuelson, L.

    2002-12-01

    Semiconductor heterostructures and their implementation into electronic and photonic devices have had tremendous impact on science and technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructure devices are receiving a lot of interest. We report here functional 1D resonant tunneling diodes obtained via bottom-up assembly of designed segments of different semiconductor materials in III/V nanowires. The emitter, collector, and the central quantum dot are made from InAs and the barrier material from InP. Ideal resonant tunneling behavior, with peak-to-valley ratios of up to 50:1 and current densities of 1 nA/μm2 was observed at low temperatures.

  14. Emitron: microwave diode

    Science.gov (United States)

    Craig, G.D.; Pettibone, J.S.; Drobot, A.T.

    1982-05-06

    The invention comprises a new class of device, driven by electron or other charged particle flow, for producing coherent microwaves by utilizing the interaction of electromagnetic waves with electron flow in diodes not requiring an external magnetic field. Anode and cathode surfaces are electrically charged with respect to one another by electron flow, for example caused by a Marx bank voltage source or by other charged particle flow, for example by a high energy charged particle beam. This produces an electric field which stimulates an emitted electron beam to flow in the anode-cathode region. The emitted electrons are accelerated by the electric field and coherent microwaves are produced by the three dimensional spatial and temporal interaction of the accelerated electrons with geometrically allowed microwave modes which results in the bunching of the electrons and the pumping of at least one dominant microwave mode.

  15. Atomic spectroscopy with diode lasers

    International Nuclear Information System (INIS)

    Tino, G.M.

    1994-01-01

    Some applications of semiconductor diode lasers in atomic spectroscopy are discussed by describing different experiments performed with lasers emitting in the visible and in the near-infrared region. I illustrate the results obtained in the investigation of near-infrared transitions of atomic oxygen and of the visible intercombination line of strontium. I also describe how two offset-frequency-locked diode lasers can be used to excite velocity selective Raman transitions in Cs. I discuss the spectral resolution, the accuracy of frequency measurements, and the detection sensitivity achievable with diode lasers. (orig.)

  16. Frequency locking of compact laser-diode modules at 633 nm

    Science.gov (United States)

    Nölleke, Christian; Leisching, Patrick; Blume, Gunnar; Jedrzejczyk, Daniel; Pohl, Johannes; Feise, David; Sahm, Alexander; Paschke, Katrin

    2018-02-01

    This work reports on a compact diode-laser module emitting at 633 nm. The emission frequency can be tuned with temperature and current, while optical feedback of an internal DBR grating ensures single-mode operation. The laser diode is integrated into a micro-fabricated package, which includes optics for beam shaping, a miniaturized optical isolator, and a vapor cell as frequency reference. The achieved absolute frequency stability is below 10-8 , while the output power can be more than 10 mW. This compact absolute frequency-stabilized laser system can replace gas lasers and may be integrated in future quantum technology devices.

  17. Laterally injected light-emitting diode and laser diode

    Science.gov (United States)

    Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

    2015-06-16

    A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

  18. All-electronic suppression of mode hopping noise in diode lasers

    DEFF Research Database (Denmark)

    Bager, L.

    1990-01-01

    A simple all-electronic stabilization scheme is presented for suppression of external-cavity mode-hopping noise in diode lasers. This excess noise is generated when the laser is subjected to optical feedback and may degrade the overall performance of optical systems including sensors. Suppression...

  19. Enhanced vbasis laser diode package

    Science.gov (United States)

    Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack

    2014-08-19

    A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

  20. Modeling of Microwave Semiconductor Diodes

    Directory of Open Access Journals (Sweden)

    Z. Raida

    2008-09-01

    Full Text Available The paper deals with the multi-physical mode-ling of microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equati-ons are summarized, and modeling issues are discussed. The simulations of the Gunn Effect in transferred electron devices and the carrier injection effect in PIN diodes are investigated and discussed. The analysis was performed in COMSOL Multiphysics using the finite element method.

  1. Modeling of Microwave Semiconductor Diodes

    OpenAIRE

    Pokorny, M.; Raida, Zbyněk

    2008-01-01

    The paper deals with the multi-physical mode-ling of microwave diodes. The electrostatic, drift-diffusion and thermal phenomena are considered in the physical model of the components. The basic semiconductor equati-ons are summarized, and modeling issues are discussed. The simulations of the Gunn Effect in transferred electron devices and the carrier injection effect in PIN diodes are investigated and discussed. The analysis was performed in COMSOL Multiphysics using the finite element method.

  2. Disruptive laser diode source for embedded LIDAR sensors

    Science.gov (United States)

    Canal, Celine; Laugustin, Arnaud; Kohl, Andreas; Rabot, Olivier

    2017-02-01

    Active imaging based on laser illumination is used in various fields such as medicine, security, defense, civil engineering and in the automotive sector. In this last domain, research and development to bring autonomous vehicles on the roads has been intensified these last years with an emphasis on lidar technology that is probably the key to achieve full automation level. Based on time-of-flight measurements, the profile of objects can be measured together with their location in various conditions, creating a 3D mapping of the environment. To be embedded on a vehicle as advanced driver assistance systems (ADAS), these sensors require compactness, low-cost and reliability, as it is provided by a flash lidar. An attractive candidate, especially with respect to cost reduction, for the laser source integrated in these devices is certainly laser diodes as long as they can provide sufficiently short pulses with a high energy. A recent breakthrough in laser diode and diode driver technology made by Quantel (Les Ulis, France) now allows laser emission higher than 1 mJ with pulses as short as 12 ns in a footprint of 4x5 cm2 (including both the laser diode and driver) and an electrical-to-optical conversion efficiency of the whole laser diode source higher than 25% at this level of energy. The components used for the laser source presented here can all be manufactured at low cost. In particular, instead of having several individual laser diodes positioned side by side, the laser diodes are monolithically integrated on a single semiconductor chip. The chips are then integrated directly on the driver board in a single assembly step. These laser sources emit in the range of 800-1000 nm and their emission is considered to be eye safe when taking into account the high divergence of the output beam and the aperture of possible macro lenses so that they can be used for end consumer applications. Experimental characterization of these state-of-the-art pulsed laser diode sources

  3. Organic light-emitting diodes from homoleptic square planar complexes

    Science.gov (United States)

    Omary, Mohammad A

    2013-11-12

    Homoleptic square planar complexes [M(N.LAMBDA.N).sub.2], wherein two identical N.LAMBDA.N bidentate anionic ligands are coordinated to the M(II) metal center, including bidentate square planar complexes of triazolates, possess optical and electrical properties that make them useful for a wide variety of optical and electrical devices and applications. In particular, the complexes are useful for obtaining white or monochromatic organic light-emitting diodes ("OLEDs"). Improved white organic light emitting diode ("WOLED") designs have improved efficacy and/or color stability at high brightness in single- or two-emitter white or monochrome OLEDs that utilize homoleptic square planar complexes, including bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II) ("Pt(ptp).sub.2").

  4. Vacuum Nanohole Array Embedded Phosphorescent Organic Light Emitting Diodes

    Science.gov (United States)

    Jeon, Sohee; Lee, Jeong-Hwan; Jeong, Jun-Ho; Song, Young Seok; Moon, Chang-Ki; Kim, Jang-Joo; Youn, Jae Ryoun

    2015-01-01

    Light extraction from organic light-emitting diodes that utilize phosphorescent materials has an internal efficiency of 100% but is limited by an external quantum efficiency (EQE) of 30%. In this study, extremely high-efficiency organic light emitting diodes (OLEDs) with an EQE of greater than 50% and low roll-off were produced by inserting a vacuum nanohole array (VNHA) into phosphorescent OLEDs (PhOLEDs). The resultant extraction enhancement was quantified in terms of EQE by comparing experimentally measured results with those produced from optical modeling analysis, which assumes the near-perfect electric characteristics of the device. A comparison of the experimental data and optical modeling results indicated that the VNHA extracts the entire waveguide loss into the air. The EQE obtained in this study is the highest value obtained to date for bottom-emitting OLEDs. PMID:25732061

  5. Phosphor converted laser diode light source for endoscopic diagnostics

    DEFF Research Database (Denmark)

    Krasnoshchoka, Anastasiia; Thorseth, Anders; Dam-Hansen, Carsten

    2017-01-01

    In order to provide light sources for endourology and on-site testing of the light source, we are developing a portable endoscope light source prototype based on a phosphor converted laser diode. A small emitting area from the phosphor material excited by a laser diode enables coupling...... of the generated white light into thin optical fibres. The development involves designing optics for optimizing the light extraction efficiency and guiding of light to the area of interest. In this paper we compared the developed light source to the current standard in endoscopy – xenon arc lamps. Detailed...... spectral analysis of illuminance, CRI and CCT at two power levels and two distances for both the PC-LD and the xenon light source was performed. The obtained results verified that the developed light source is suitable for endoscopy illumination and the first pre-clinical trials will be performed shortly....

  6. Modeling of diode pumped metastable rare gas lasers.

    Science.gov (United States)

    Yang, Zining; Yu, Guangqi; Wang, Hongyan; Lu, Qisheng; Xu, Xiaojun

    2015-06-01

    As a new kind of optically pumped gaseous lasers, diode pumped metastable rare gas lasers (OPRGLs) show potential in high power operation. In this paper, a multi-level rate equation based model of OPRGL is established. A qualitative agreement between simulation and Rawlins et al.'s experimental result shows the validity of the model. The key parameters' influences and energy distribution characteristics are theoretically studied, which is useful for the optimized design of high efficient OPRGLs.

  7. Innovative Facet Passivation for High-Brightness Laser Diodes

    Science.gov (United States)

    2016-02-05

    formation process (cleaving) or from contamination from the ambient . (a) Papers published in peer-reviewed journals (N/A for none) Enter List of...funded by a DoD funded Center of Excellence grant for Education , Research and Engineering: The number of undergraduates funded by your agreement who...contamination from the ambient . 15. S U B J E C T T E R M S High-power laser diodes, catastrophic optical damage, high energy lasers 16. SECURITY

  8. Photo-Detectors Integrated with Resonant Tunneling Diodes

    Directory of Open Access Journals (Sweden)

    José M. L. Figueiredo

    2013-07-01

    Full Text Available We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD. Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR region. The resonant tunneling diode photo-detector (RTD-PD can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTD’s NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems.

  9. Linear and passive silicon diodes, isolators, and logic gates

    Science.gov (United States)

    Li, Zhi-Yuan

    2013-12-01

    Silicon photonic integrated devices and circuits have offered a promising means to revolutionalize information processing and computing technologies. One important reason is that these devices are compatible with conventional complementary metal oxide semiconductor (CMOS) processing technology that overwhelms current microelectronics industry. Yet, the dream to build optical computers has yet to come without the breakthrough of several key elements including optical diodes, isolators, and logic gates with low power, high signal contrast, and large bandwidth. Photonic crystal has a great power to mold the flow of light in micrometer/nanometer scale and is a promising platform for optical integration. In this paper we present our recent efforts of design, fabrication, and characterization of ultracompact, linear, passive on-chip optical diodes, isolators and logic gates based on silicon two-dimensional photonic crystal slabs. Both simulation and experiment results show high performance of these novel designed devices. These linear and passive silicon devices have the unique properties of small fingerprint, low power request, large bandwidth, fast response speed, easy for fabrication, and being compatible with COMS technology. Further improving their performance would open up a road towards photonic logics and optical computing and help to construct nanophotonic on-chip processor architectures for future optical computers.

  10. Light Emitting Diodes (LEDs)

    Science.gov (United States)

    1997-01-01

    A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique, called Photodynamic Therapy, requires the surgeon to use tiny, pinhead-size Light Emitting Diodes (LEDs) (a source that releases long wavelengths of light ) to activate light-sensitive, tumor-treating drugs. 'A young woman operated on in May 1999 has fully recovered with no complications and no evidence of the tumor coming back,' said Dr. Harry Whelan, a pediatric neurologist at the Medical Hospital of Wisconsin in Milwaukee. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can be used for hours at a time while still remaining cool to the touch. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The LEDs, developed and managed by NASA's Marshall Space Flight Center, have been used on seven Space Shuttle flights inside the Microgravity Astroculture Facility. This technology has also been successfully used to further commercial research in crop growth.

  11. High average power diode pumped solid state lasers for CALIOPE

    International Nuclear Information System (INIS)

    Comaskey, B.; Halpin, J.; Moran, B.

    1994-07-01

    Diode pumping of solid state media offers the opportunity for very low maintenance, high efficiency, and compact laser systems. For remote sensing, such lasers may be used to pump tunable non-linear sources, or if tunable themselves, act directly or through harmonic crystals as the probe. The needs of long range remote sensing missions require laser performance in the several watts to kilowatts range. At these power performance levels, more advanced thermal management technologies are required for the diode pumps. The solid state laser design must now address a variety of issues arising from the thermal loads, including fracture limits, induced lensing and aberrations, induced birefringence, and laser cavity optical component performance degradation with average power loading. In order to highlight the design trade-offs involved in addressing the above issues, a variety of existing average power laser systems are briefly described. Included are two systems based on Spectra Diode Laboratory's water impingement cooled diode packages: a two times diffraction limited, 200 watt average power, 200 Hz multi-rod laser/amplifier by Fibertek, and TRW's 100 watt, 100 Hz, phase conjugated amplifier. The authors also present two laser systems built at Lawrence Livermore National Laboratory (LLNL) based on their more aggressive diode bar cooling package, which uses microchannel cooler technology capable of 100% duty factor operation. They then present the design of LLNL's first generation OPO pump laser for remote sensing. This system is specified to run at 100 Hz, 20 nsec pulses each with 300 mJ, less than two times diffraction limited, and with a stable single longitudinal mode. The performance of the first testbed version will be presented. The authors conclude with directions their group is pursuing to advance average power lasers. This includes average power electro-optics, low heat load lasing media, and heat capacity lasers

  12. Long-term Comparison of a Large Spot Vacuum Assisted Handpiece vs the Small Spot Size Traditional Handpiece of the 800 nm Diode Laser.

    Science.gov (United States)

    Youssef, Nour J; Rizk, Alain G; Ibrahimi, Omar A; Tannous, Zeina S

    2017-09-01

    BACKGROUND The 800 nm long-pulsed diode laser machine is safe and effective for permanent hair reduction. Traditionally, most long-pulsed diode lasers used for hair removal had a relatively small spot size. Recently, a long-pulsed diode laser with a large spot size and vacuum assisted suction handpiece was introduced. The treatment parameters of each type of handpiece differ. Short and long-term clinical efficacy, treatment associated pain, and patient satisfaction are important factors to be considered. This study aims to conduct a direct head to head comparison of both handpieces of the 800nm long-pulsed diode laser by evaluating long term hair reduction, treatment associated pain and patient satisfaction. Thirteen subjects were enrolled in this prospective, self-controlled, single-center study of axillary laser hair removal. The study involved 4 treatments using a long pulsed diode laser with a large spot size HS handpiece (single pass), HS handpiece (double pass), and a small spot size ET handpiece according to a randomized choice. The treatment sessions were done at 4-8 week intervals with follow up visits taken at 6 and 12 months after the last treatment session. Hair clearance and thickness analysis were assessed using macro hair count photographs taken at baseline visit, at each treatment session visit and at follow up visits. Other factors including pain, treatment duration, and patients' preference were secondary study endpoints. At 6 months follow up visits after receiving four laser treatments, there was statistically significant hair clearance in the three treatment arms with 66.1 % mean percentage hair reduction with the ET handpiece, 43.6% with the HSS (single pass) and 64.1 % with the HSD (double). However, at one year follow up, the results significantly varied from the 6 months follow up. The mean percentage hair reduction was 57.8% with the ET handpiece treated axillas (n=9), 16.5% with the HSS (single pass) handpiece treated axillas (n=7), and

  13. Light-emitting diodes for analytical chemistry.

    Science.gov (United States)

    Macka, Mirek; Piasecki, Tomasz; Dasgupta, Purnendu K

    2014-01-01

    Light-emitting diodes (LEDs) are playing increasingly important roles in analytical chemistry, from the final analysis stage to photoreactors for analyte conversion to actual fabrication of and incorporation in microdevices for analytical use. The extremely fast turn-on/off rates of LEDs have made possible simple approaches to fluorescence lifetime measurement. Although they are increasingly being used as detectors, their wavelength selectivity as detectors has rarely been exploited. From their first proposed use for absorbance measurement in 1970, LEDs have been used in analytical chemistry in too many ways to make a comprehensive review possible. Hence, we critically review here the more recent literature on their use in optical detection and measurement systems. Cloudy as our crystal ball may be, we express our views on the future applications of LEDs in analytical chemistry: The horizon will certainly become wider as LEDs in the deep UV with sufficient intensity become available.

  14. Compact 2100 nm laser diode module for next-generation DIRCM

    Science.gov (United States)

    Dvinelis, Edgaras; Greibus, Mindaugas; TrinkÅ«nas, Augustinas; NaujokaitÄ--, Greta; Vizbaras, Augustinas; Vizbaras, Dominykas; Vizbaras, Kristijonas

    2017-10-01

    Compact high-power 2100 nm laser diode module for next-generation directional infrared countermeasure (DIRCM) systems is presented. Next-generation DIRCM systems require compact, light-weight and robust laser modules which could provide intense IR light emission capable of disrupting the tracking sensor of heat-seeking missile. Currently used solid-state and fiber laser solutions for mid-IR band are bulky and heavy making them difficult to implement in smaller form-factor DIRCM systems. Recent development of GaSb laser diode technology greatly improved optical output powers and efficiencies of laser diodes working in 1900 - 2450 nm band [1] while also maintaining very attractive size, weight, power consumption and cost characteristics. 2100 nm laser diode module presented in this work performance is based on high-efficiency broad emitting area GaSb laser diode technology. Each laser diode emitter is able to provide 1 W of CW output optical power with working point efficiency up to 20% at temperature of 20 °C. For output beam collimation custom designed fast-axis collimator and slow-axis collimator lenses were used. These lenses were actively aligned and attached using UV epoxy curing. Total 2 emitters stacked vertically were used in 2100 nm laser diode module. Final optical output power of the module goes up to 2 W at temperature of 20 °C. Total dimensions of the laser diode module are 35 x 25 x 16 mm (L x W x H) with a weight of 28 grams. Finally output beam is bore-sighted to mechanical axes of the module housing allowing for easy integration into next-generation DIRCM systems.

  15. Dependence of the electrical and optical properties on growth interruption in AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes.

    Science.gov (United States)

    Zhang, Yang; Guan, Min; Liu, Xingfang; Zeng, Yiping

    2011-11-23

    The dependence of interface roughness of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes [RTDs] grown by molecular beam epitaxy on interruption time was studied by current-voltage [I-V] characteristics, photoluminescence [PL] spectroscopy, and transmission electron microscopy [TEM]. We have observed that a splitting in the quantum-well PL due to island formation in the quantum well is sensitive to growth interruption at the AlAs/In0.53Ga0.47As interfaces. TEM images also show flatter interfaces with a few islands which only occur by applying an optimum value of interruption time. The symmetry of I-V characteristics of RTDs with PL and TEM results is consistent because tunneling current is highly dependent on barrier thickness and interface roughness.

  16. Power blue and green laser diodes and their applications

    Science.gov (United States)

    Hager, Thomas; Strauß, Uwe; Eichler, Christoph; Vierheilig, Clemens; Tautz, Sönke; Brüderl, Georg; Stojetz, Bernhard; Wurm, Teresa; Avramescu, Adrian; Somers, André; Ristic, Jelena; Gerhard, Sven; Lell, Alfred; Morgott, Stefan; Mehl, Oliver

    2013-03-01

    InGaN based green laser diodes with output powers up to 50mW are now well established for variety of applications ranging from leveling to special lighting effects and mobile projection of 12lm brightness. In future the highest market potential for visible single mode profile lasers might be laser projection of 20lm. Therefore direct green single-mode laser diodes with higher power are required. We found that self heating was the limiting factor for higher current operation. We present power-current characteristics of improved R and D samples with up to 200mW in cw-operation. An optical output power of 100mW is reached at 215mA, a current level which is suitable for long term operation. Blue InGaN laser diodes are also the ideal source for phosphor based generation of green light sources of high luminance. We present a light engine based on LARP (Laser Activated Remote Phosphor) which can be used in business projectors of several thousand lumens on screen. We discuss the advantages of a laser based systems in comparison with LED light engines. LARP requires highly efficient blue power laser diodes with output power above 1W. Future market penetration of LARP will require lower costs. Therefore we studied new designs for higher powers levels. R and D chips with power-current characteristics up to 4W in continuous wave operation on C-mount at 25°C are presented.

  17. Measurement of the electron charge by a vacuum diode

    Science.gov (United States)

    Lacsný, Boris; Štubňa, Igor

    2016-03-01

    The measurement of the electron charge is a suitable experimental assignment for high-school and undergraduate courses of physics. We used two vacuum electron-tubes: (a) a double rectifying modern diode with an indirectly heated cathode and (b) a specially prepared double diode with a directly heated cathode and thermocouple. There was a small retarding potential between the cathode and anode, which gave an opportunity to assume Maxwell’s distribution of the velocities of the emitted electrons for the measurement of the electron charge. The electrical scheme for this measurement is simple and common electronic devices can be used. We obtained the value for the electron charge (1.491 ± 0.036) × 10-19 C if measured on the common commercial double diode vacuum-tube with the use of an optical pyrometer and (1.611 ± 0074) × 10-19 C if measured on the specially prepared double diode vacuum-tube using a thermocouple to determine the cathode temperature. The obtained values of the electron charge differs 0.11 × 10-19 C and 0.01 × 10-19 C from the currently accepted value e = 1.6021766208(98) × 10-19 C.

  18. Highly-reliable laser diodes and modules for spaceborne applications

    Science.gov (United States)

    Deichsel, E.

    2017-11-01

    Laser applications become more and more interesting in contemporary missions such as earth observations or optical communication in space. One of these applications is light detection and ranging (LIDAR), which comprises huge scientific potential in future missions. The Nd:YAG solid-state laser of such a LIDAR system is optically pumped using 808nm emitting pump sources based on semiconductor laser-diodes in quasi-continuous wave (qcw) operation. Therefore reliable and efficient laser diodes with increased output powers are an important requirement for a spaceborne LIDAR-system. In the past, many tests were performed regarding the performance and life-time of such laser-diodes. There were also studies for spaceborne applications, but a test with long operation times at high powers and statistical relevance is pending. Other applications, such as science packages (e.g. Raman-spectroscopy) on planetary rovers require also reliable high-power light sources. Typically fiber-coupled laser diode modules are used for such applications. Besides high reliability and life-time, designs compatible to the harsh environmental conditions must be taken in account. Mechanical loads, such as shock or strong vibration are expected due to take-off or landing procedures. Many temperature cycles with high change rates and differences must be taken in account due to sun-shadow effects in planetary orbits. Cosmic radiation has strong impact on optical components and must also be taken in account. Last, a hermetic sealing must be considered, since vacuum can have disadvantageous effects on optoelectronics components.

  19. Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

    International Nuclear Information System (INIS)

    Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.

    1994-01-01

    The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL's). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL's which are appropriate for material processing applications, low and intermediate average power DPSSL's are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications

  20. All optical wavelength conversion and parametric amplification in Ti:PPLN channel waveguides for telecommunication applications

    Energy Technology Data Exchange (ETDEWEB)

    Nouroozi, Rahman

    2010-10-19

    conversion is based on a polarization maintaining fiber loop configuration. Since both polarization components can be converted in a contra-directional single-pass waveguide, differential group delay (DGD) equalization between them is automatically provided. With such polarization diversity scheme an error-free polarization insensitive conversion of 320 Gb/s differential quaternary phase shift keying (DQPSK) data with signal pulses of 1.4 ps width has been achieved using the packaged and pigtailed cSHG/DFG-based wavelength converter. No significant broadening or distortion of the converted data pulses was observed. This approach results in a tuneable output wavelength of the idler whereas the input signal wavelength can be kept fixed. In a 70 mm long Ti:PPLN channel guide a conversion efficiency of {proportional_to}-7.5 dB has been achieved by 80 mW (20 mW) of coupled pump (control) power level with less than {+-}0.5 dB of residual polarization dependence. The tuning range of the idler covers the whole Cband. However, in contrast to cSHG/DFG, pulse broadening of the converted signal will limit the data rate for cSFG/DFG. For sufficiently high pump power levels wavelength conversion by DFG is accompanied by significant optical parametric amplification (OPA) of the input signal. To increase the fundamental power handling flexibility and to avoid photorefractive effect, a low duty cycle Q-switched diode-pumped-solid-state (DPSS) laser has been used as the fundamental source. With 2.5 W of fundamental peak power {proportional_to}22 dB of signal gain has been measured. (orig.)

  1. Spin-photon entangling diode

    DEFF Research Database (Denmark)

    Flindt, Christian; Sørensen, A. S.; Lukin, M. D.

    2007-01-01

    We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control...... of the diode bias and local gating allow for the generation of single photons that are entangled with a robust quantum memory based on the electron spins. Practical performance of this approach to controlled spin-photon entanglement is analyzed....

  2. Multi-kW high-brightness fiber coupled diode laser based on two dimensional stacked tailored diode bars

    Science.gov (United States)

    Bayer, Andreas; Unger, Andreas; Köhler, Bernd; Küster, Matthias; Dürsch, Sascha; Kissel, Heiko; Irwin, David A.; Bodem, Christian; Plappert, Nora; Kersten, Maik; Biesenbach, Jens

    2016-03-01

    The demand for high brightness fiber coupled diode laser devices in the multi kW power region is mainly driven by industrial applications for materials processing, like brazing, cladding and metal welding, which require a beam quality better than 30 mm x mrad and power levels above 3kW. Reliability, modularity, and cost effectiveness are key factors for success in the market. We have developed a scalable and modular diode laser architecture that fulfills these requirements through use of a simple beam shaping concept based on two dimensional stacking of tailored diode bars mounted on specially designed, tap water cooled heat sinks. The base element of the concept is a tailored diode laser bar with an epitaxial and lateral structure designed such that the desired beam quality in slow-axis direction can be realized without using sophisticated beam shaping optics. The optical design concept is based on fast-axis collimator (FAC) and slow-axis collimator (SAC) lenses followed by only one additional focusing optic for efficient coupling into a 400 μm fiber with a numerical aperture (NA) of 0.12. To fulfill the requirements of scalability and modularity, four tailored bars are populated on a reduced size, tap water cooled heat sink. The diodes on these building blocks are collimated simply via FAC and SAC. The building blocks can be stacked vertically resulting in a two-dimensional diode stack, which enables a compact design of the laser source with minimum beam path length. For a single wavelength, up to eight of these building blocks, implying a total of 32 tailored bars, can be stacked into a submodule, polarization multiplexed, and coupled into a 400 μm, 0.12NA fiber. Scalability into the multi kW region is realized by wavelength combining of replaceable submodules in the spectral range from 900 - 1100 nm. We present results of a laser source based on this architecture with an output power of more than 4 kW and a beam quality of 25 mm x mrad.

  3. Diode Pumped Fiber Laser.

    Science.gov (United States)

    1987-08-01

    3.15 Impermeability Tensor for Lithium Niobate upon Application of an Electric Field E. ? denotes the Optical Field ........... 99 3.16 Possible... electric field perpendicular to the c-axis, and a 7r or "high-gain polarization," X = 1.085 pm, with electric field parallel to the c-axis. The first...assunied unless (dl her- 71 wise specified. 6.2 Net Gain Cross Section The net gain cross section a is equal to the estimulated emission cross section a

  4. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    Energy Technology Data Exchange (ETDEWEB)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-26

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency ({eta}{sub TPV}) and a power density (PD) of {eta}{sub TPV} = 19% and PD=0.58 W/cm{sup 2} were measured for T{sub radiator} = 950 C and T{sub diode} = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be {eta}{sub TPV} = 26% and PD = 0.75 W/cm{sup 2}. These limits are extended to {eta}{sub TPV} = 30% and PD = 0.85W/cm{sup 2} if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of

  5. AlGaInN laser diode technology and systems for defence and security applications

    Science.gov (United States)

    Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lujca; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

    2015-10-01

    AlGaInN laser diodes is an emerging technology for defence and security applications such as underwater communications and sensing, atomic clocks and quantum information. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries. Ridge waveguide laser diodes are fabricated to achieve single mode operation with optical powers up to 100mW with the 400-440nm wavelength range with high reliability. Visible free-space and underwater communication at frequencies up to 2.5GHz is reported using a directly modulated 422nm GaN laser diode. Low defectivity and highly uniform GaN substrates allow arrays and bars to be fabricated. High power operation operation of AlGaInN laser bars with up to 20 emitters have been demonstrated at optical powers up to 4W in a CS package with common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space or optical fibre system integration with a very small form-factor.

  6. Modulation of distributed feedback (DFB) laser diode with the autonomous Chua's circuit: Theory and experiment

    Science.gov (United States)

    Talla Mbé, Jimmi Hervé; Woafo, Paul

    2018-03-01

    We report on a simple way to generate complex optical waveforms with very cheap and accessible equipments. The general idea consists in modulating a laser diode with an autonomous electronic oscillator, and in the case of this study, we use a distributed feedback (DFB) laser diode pumped with an electronic Chua's circuit. Based on the adiabatic P-I characteristics of the laser diode at low frequencies, we show that when the total pump is greater than the laser threshold, it is possible to convert the electrical waveforms of the Chua's circuit into optical carriers. But, if that is not the case, the on-off dynamical behavior of the laser permits to obtain many other optical waveform signals, mainly pulses. Our numerical results are consistent with experimental measurements. The work presents the advantage of extending the range of possible chaotic dynamics of the laser diodes in the time domains (millisecond) where it is not usually expected with conventional modulation techniques. Moreover, this new technique of laser diodes modulation brings a general benefit in the physical equipment, reduces their cost and congestion so that, it can constitute a step towards photonic integrated circuits.

  7. Microstrip PIN diode microwave switch

    OpenAIRE

    Usanov, Dmitry A.; Skripal, A. V.; Kulikov, M. Yu.

    2011-01-01

    A possibility of creating narrow-band electrically controlled microwave breakers and switches with enhanced attenuation level in the blocking mode has been considered. The specified devices are based on the structure containing a short-circuited microstrip link with connected capacitor and the loop coupler, in the center of which is located a PIN diode.

  8. Characterization of Stock Blu-ray diodes

    Science.gov (United States)

    Cunningham, Mark; Archibald, James; Erickson, Christopher; Durfee, Dallin

    2010-10-01

    I am developing a process to test and characterize diodes of unknown wavelengths. using a B&WTEK Spectrometer we are characterizing the wavelength of 405 nm blu-ray diodes purchased in bulk. With the known error in production of the Diode Lasers we are hoping to find a diode at 408 nm to use in driving a raman transition between hyperfine states of strontium 87 ions. The bulk of the project is a java program that communicates with the spectrometer and graphically displays the intensities of the wavelengths from the laser diodes.

  9. Free space broad-bandwidth tunable laser diode based on Littman configuration for 3D profile measurement

    Science.gov (United States)

    Shirazi, Muhammad Faizan; Kim, Pilun; Jeon, Mansik; Kim, Chang-Seok; Kim, Jeehyun

    2018-05-01

    We developed a tunable laser diode for an optical coherence tomography system that can perform three-dimensional profile measurement using an area scanning technique. The tunable laser diode is designed using an Eagleyard tunable laser diode with a galvano filter. The Littman free space configuration is used to demonstrate laser operation. The line- and bandwidths of this source are 0.27 nm (∼110 GHz) and 43 nm, respectively, at the center wavelength of 860 nm. The output power is 20 mW at an operating current of 150 mA. A step height target is imaged using a wide-area scanning system to show the measurement accuracy of the proposed tunable laser diode. A TEM grid is also imaged to measure the topography and thickness of the sample by proposed tunable laser diode.

  10. Hybrid Light-Emitting Diode Enhanced With Emissive Nanocrystals

    DEFF Research Database (Denmark)

    Kopylov, Oleksii

    of the hybrid diode fabrication including process techniques for GaN LED and incorporation of the nanocrystals are presented with the emphasis on the differences with standard LED processing. Results and analysis of optical and electrical characterization including photoluminescence (PL), micro-PL, time......This thesis investigates a new type of white light emitting hybrid diode, composed of a light emitting GaN/InGaN LED and a layer of semiconductor nanocrystals for color conversion. Unlike standard white LEDs, the device is configured to achieve high color conversion efficiency via non......-radiative energy transfer from the primary LED to the nanocrystals. LED structures with sub-10 nm separation the between quantum well and the surface and patterned standard bright LEDs are considered for the hybrid devices, which require close proximity of the nanocrystals to the quantum well. The development...

  11. High extraction efficiency ultraviolet light-emitting diode

    Science.gov (United States)

    Wierer, Jonathan; Montano, Ines; Allerman, Andrew A.

    2015-11-24

    Ultraviolet light-emitting diodes with tailored AlGaN quantum wells can achieve high extraction efficiency. For efficient bottom light extraction, parallel polarized light is preferred, because it propagates predominately perpendicular to the QW plane and into the typical and more efficient light escape cones. This is favored over perpendicular polarized light that propagates along the QW plane which requires multiple, lossy bounces before extraction. The thickness and carrier density of AlGaN QW layers have a strong influence on the valence subband structure, and the resulting optical polarization and light extraction of ultraviolet light-emitting diodes. At Al>0.3, thinner QW layers (light preferentially polarized parallel to the QW plane. Also, active regions consisting of six or more QWs, to reduce carrier density, and with thin barriers, to efficiently inject carriers in all the QWs, are preferred.

  12. Single-pass multi-view volume rendering

    OpenAIRE

    Hübner, T; Pajarola, R

    2007-01-01

    In this paper, we introduce a new direct volume rendering (DVR) algorithm for multi-view auto-stereoscopic displays. Common multi-view methods perform multi-pass rendering (one pass for each view) and subsequent image compositing and masking for generating multiple views. The rendering time increases therefore linearly with the number of views, but sufficient frame-rates are achieved by sub-resolution rendering, at the expense of degraded image quality. To overcome these disadvantages for DVR...

  13. Single pass kernel k-means clustering method

    Indian Academy of Sciences (India)

    2016-08-26

    Aug 26, 2016 ... Department of Computer Science and Engineering, Srinivasa Ramanujan Institute of Technology, Anantapur 515701, India; Department of Computer Science and Engineering, Rajeev Gandhi Memorial College of Engineering and Technology, Nandyal 518501, India; Department of Computer Science and ...

  14. Single pass kernel k-means clustering method

    Indian Academy of Sciences (India)

    In unsupervised classification, kernel -means clustering method has been shown to perform better than conventional -means clustering method in ... 518501, India; Department of Computer Science and Engineering, Jawaharlal Nehru Technological University, Anantapur College of Engineering, Anantapur 515002, India ...

  15. Single pass kernel k-means clustering method

    Indian Academy of Sciences (India)

    easily implemented and is suitable for large data sets, like those in data mining appli- cations. Experimental results show that, with a small loss of quality, the proposed method can significantly reduce the time taken than the conventional kernel k-means cluster- ing method. The proposed method is also compared with other ...

  16. Single pass kernel k-means clustering method

    Indian Academy of Sciences (India)

    This approach has reduced both time complexity and memory requirements. However, the clustering result of this method will be very much deviated form that obtained using the conventional kernel k-means method. This is because of the fact that pseudo cluster centers in the input space may not represent the exact cluster ...

  17. Single Pass Collider Memo: Gradient Perturbations of the SLC arc

    Energy Technology Data Exchange (ETDEWEB)

    Weng, W.T.; Sands, M.; /SLAC

    2016-12-16

    As the beam passes through the arcs, the gradient it encounters at each magnet differs from the design value. This deviation may be in part random and in part systematic. In this note we make estimates of the effects to be expected from both kinds of errors.

  18. Millimeter wave p—i—n-diode switching controlled devices

    Directory of Open Access Journals (Sweden)

    Karushkin N. F.

    2016-10-01

    development of millimeter wavelength devices, it should be noted that at frequencies greater than 200 GHz, the application of the concentrated type diodes is problematic. In this range it would seem to be promising to use bulk semiconductors. In this case surface-oriented p—i—n-structures can be applied as unified elements of the control devices in the shortwave part of the millimeter range, as well as in quasi-optical transmission lines.

  19. Note: Demonstration of an external-cavity diode laser system immune to current and temperature fluctuations.

    Science.gov (United States)

    Miao, Xinyu; Yin, Longfei; Zhuang, Wei; Luo, Bin; Dang, Anhong; Chen, Jingbiao; Guo, Hong

    2011-08-01

    We demonstrate an external-cavity laser system using an anti-reflection coated laser diode as gain medium with about 60 nm fluorescence spectrum, and a Rb Faraday anomalous dispersion optical filter (FADOF) as frequency-selecting element with a transmission bandwidth of 1.3 GHz. With 6.4% optical feedback, a single stable longitudinal mode is obtained with a linewidth of 69 kHz. The wavelength of this laser is operating within the center of the highest transmission peak of FADOF over a diode current range from 55 mA to 142 mA and a diode temperature range from 15 °C to 35 °C, thus it is immune to the fluctuations of current and temperature.

  20. Efficient generation of 509 nm light by sum-frequency mixing between two tapered diode lasers

    DEFF Research Database (Denmark)

    Tawfieq, Mahmoud; Jensen, Ole Bjarlin; Hansen, Anders Kragh

    2015-01-01

    We demonstrate a concept for visible laser sources based on sum-frequency generation of beam com- bined tapered diode lasers. In this specific case, a 1.7 W sum-frequency generated green laser at 509 nm is obtained, by frequency adding of 6.17 W from a 978 nm tapered diode laser with 8.06 W from...... a 1063 nm tapered diode laser, inside a periodically poled MgO doped lithium niobate crystal. This corresponds to an optical to optical conversion ef fi ciency of 12.1%. As an example of potential applica- tions, the generated nearly diffraction-limited green light is used for pumping a Ti:sapphire laser...

  1. Spectral properties of a broad-area diode laser with off-axis external-cavity feedback

    DEFF Research Database (Denmark)

    Chi, Mingjun; Petersen, Paul Michael

    2013-01-01

    . The intensity noise spectrum of the diode laser shows that the intensity noise is increased strongly by the external-cavity feedback. External-cavity modes are excited in the external cavity even in the off-axis configuration. The peak spacing of the intensity noise spectrum shows that single roundtrip external......Spectral properties, both the optical spectrum and the intensity noise spectrum, of a broad-area diode laser with off-axis external-cavity feedback are presented. We show that the optical spectrum of the diode laser system is shifted to longer wavelengths due to the external-cavity feedback......-cavity modes are excited. We believe that the four-wave mixing process in the broad-area diode laser is responsible for the establishment of the external-cavity mode....

  2. Spectral shaping of a 10 W diode laser-Yb-fiber amplifier system

    NARCIS (Netherlands)

    Adhimoolam, B.; Lindsay, I.D.; Lee, Christopher James; Gross, P.; Boller, Klaus J.; Klein, M.E.

    2006-01-01

    We describe a continuous-wave master-oscillator power-amplifier system based on a distributed Bragg reflection diode laser and an Yb doped fiber amplifier. The observed optical spectrum of the amplified seed source can be tailored to arbitrary shapes and widths between 30 MHz and greater than 1 GHz

  3. Characterisation of Silicon Pad Diodes

    CERN Document Server

    Hodson, Thomas Connor

    2017-01-01

    Silicon pad sensors are used in high luminosity particle detectors because of their excellent timing resolution, radiation tolerance and possible high granularity. The effect of different design decisions on detector performance can be investigated nondestructively through electronic characterisation of the sensor diodes. Methods for making accurate measurements of leakage current and cell capacitance are described using both a standard approach with tungsten needles and an automated approach with a custom multiplexer and probing setup.

  4. High-power, high-efficiency, high-brightness long-wavelength laser diodes

    Science.gov (United States)

    Patterson, Steve; Crump, Paul; Wang, Jun; Dong, Weimin; Grimshaw, Mike; Zhang, Shiguo; Elim, Sandrio; Das, Suhit; Bougher, Mike; Patterson, Jason; Kuang, Guokui; Bell, Jake; Farmer, Jason; DeVito, Mark

    2006-05-01

    Interest is rapidly growing in solid-state lasers emitting from 1500-nm to 2100-nm with applications in eye-safe range finding, LIDAR, infrared countermeasures, medicine, dentistry, and others. Traditionally, these solid-state lasers have been pumped by flash lamps or more recently, by semiconductor diode lasers. In the case of the latter, the diodes of choice have been those emitting below 1-μm. The sub-micron class of semiconductor diode lasers is highly mature and has enjoyed recent rapid advances in power and efficiency. Unfortunately, the quantum defect generated when converting to the desired wavelengths results in large amounts of excess heat generation leading to costly and heavy, expensive cooling systems and performance problems related to thermal lensing. System complexity adds further cost and weight when intermediaries, such as optical parametric oscillators, are required to reach the desired longer wavelengths. Recent advances in laser diodes emitting from 1400-nm to over 1900-nm now enable the near resonant pumping of such solid state media as Er:YAG, Ho:YAG and Cr:ZnSe. Record results in the peak output power and electrical-to-optical conversion efficiency of diode lasers emitting around 1470-nm, 1700-nm and 1900-nm are presented here.

  5. Light emitting polymer blends and diffractive optical elements in high-speed direct laser writing of microstructures

    International Nuclear Information System (INIS)

    Suyal, H; Waddie, A J; Taghizadeh, M R; McCarthy, A; Walker, A C; Mackintosh, A R; Kuehne, A J C; Pethrick, R A; Gu, E; Dawson, M D; Bradley, D D C

    2008-01-01

    In this paper, we describe a series of improvements that have been made to our direct laser writing waveguide/microfluidic fabrication technology. We demonstrate significant increases in the writing speed (measured in micrometres of written structure per second) by both the use of customized photopolymers containing light emitting polymer and the inclusion of a diffractive optical element to enable the writing of multiple channels in a single pass

  6. Nonlinear Phase Distortion in a Ti:Sapphire Optical Amplifier for Optical Stochastic Cooling

    Energy Technology Data Exchange (ETDEWEB)

    Andorf, Matthew [NICADD, DeKalb; Lebedev, Valeri [Fermilab; Piot, Philippe [NICADD, DeKalb; Ruan, Jinhao [Fermilab

    2016-06-01

    Optical Stochastic Cooling (OSC) has been considered for future high-luminosity colliders as it offers much faster cooling time in comparison to the micro-wave stochastic cooling. The OSC technique relies on collecting and amplifying a broadband optical signal from a pickup undulator and feeding the amplified signal back to the beam. It creates a corrective kick in a kicker undulator. Owing to its superb gain qualities and broadband amplification features, Titanium:Sapphire medium has been considered as a gain medium for the optical amplifier (OA) needed in the OSC*. A limiting factor for any OA used in OSC is the possibility of nonlinear phase distortions. In this paper we experimentally measure phase distortions by inserting a single-pass OA into one leg of a Mach-Zehnder interferometer. The measurement results are used to estimate the reduction of the corrective kick a particle would receive due to these phase distortions in the kicker undulator.

  7. Optoelectronic line transmission an introduction to fibre optics

    CERN Document Server

    Tricker, Raymond L

    2013-01-01

    Optoelectronic Line Transmission: An Introduction to Fibre Optics presents a basic introduction as well as a background reference manual on fiber optic transmission. The book discusses the basic principles of optical line transmission; the advantages and disadvantages of optical fibers and optoelectronic signalling; the practical applications of optoelectronics; and the future of optoelectronics. The text also describes the theories of optical line transmission; fibers and cables for optical transmission; transmitters including light-emitting diodes and lasers; and receivers including photodi

  8. An auto-locked diode laser system for precision metrology

    Science.gov (United States)

    Beica, H. C.; Carew, A.; Vorozcovs, A.; Dowling, P.; Pouliot, A.; Barron, B.; Kumarakrishnan, A.

    2017-05-01

    We present a unique external cavity diode laser system that can be auto-locked with reference to atomic and molecular spectra. The vacuum-sealed laser head design uses an interchangeable base-plate comprised of a laser diode and optical elements that can be selected for desired wavelength ranges. The feedback light to the laser diode is provided by a narrow-band interference filter, which can be tuned from outside the laser cavity to fineadjust the output wavelength in vacuum. To stabilize the laser frequency, the digital laser controller relies either on a pattern-matching algorithm stored in memory, or on first or third derivative feedback. We have used the laser systems to perform spectroscopic studies in rubidium at 780 nm, and in iodine at 633 nm. The linewidth of the 780-nm laser system was measured to be ˜500 kHz, and we present Allan deviation measurements of the beat note and the lock stability. Furthermore, we show that the laser system can be the basis for a new class of lidar transmitters in which a temperature-stabilized fiber-Bragg grating is used to generate frequency references for on-line points of the transmitter. We show that the fiber-Bragg grating spectra can be calibrated with reference to atomic transitions.

  9. Reliable wide-range diode thermometry

    International Nuclear Information System (INIS)

    Krause, J.K.; Swinehart, P.R.

    1986-01-01

    A review of diode thermometry is given, pointing out its advantages and limitations. Research and development efforts towards improving the diode temperature sensor are outlined and preliminary data are presented on a recently introduced diode temperature sensor made of GaAlAs. Important aspects to consider in the calibration of temperature sensors and also the limitations in using liquid cryogens as calibration check points are described

  10. Thermic diode performance characteristics and design manual

    Science.gov (United States)

    Bernard, D. E.; Buckley, S.

    1979-01-01

    Thermic diode solar panels are a passive method of space and hot water heating using the thermosyphon principle. Simplified methods of sizing and performing economic analyses of solar heating systems had until now been limited to passive systems. A mathematical model of the thermic diode including its high level of stratification has been constructed allowing its performance characteristics to be studied. Further analysis resulted in a thermic diode design manual based on the f-chart method.

  11. Focusing experiments with light ion diodes

    International Nuclear Information System (INIS)

    Johnson, D.L.

    1978-01-01

    A review of recent experimental and theoretical work at Sandia Laboratories on magnetically insulated single stage ion diodes for inertial confinement fusion experiments is presented. The production, focusing, and numerical simulation of a 0.5 TW annular proton beam using the Proto I dual transmission line generator is described. The modular magnetically insulated ion diode for the Hydra generator is also described along with recent experimental results. A brief description of how an array of modular diodes similar to the Hydra magnetically insulated diode could be used on the EBFA I generator for breakeven fusion experiments is presented

  12. Proceedings of the IEEE laser and electro-optics society annual meeting

    International Nuclear Information System (INIS)

    Hudson, M.J.B.; Raney, H.; Raney, D.; Spalaris, C.N.

    1990-01-01

    This book is covered under the following headings: Electro-optic systems; Emerging laser technology; Optical sensors and measurements; Optoelectronics; Semiconductor diode lasers; Solid state lasers; UV and short wavelength; Applied optical diagnostics of semiconductor materials and devices symposium and optical sensors and measurements; and Applied optical diagnostics of semiconductor materials and devices symposium

  13. AlGaInN laser diode technology for defence, security and sensing applications

    Science.gov (United States)

    Najda, Stephen P.; Perlin, Piotr; Suski, Tadek; Marona, Lucja; Boćkowski, Mike; Leszczyński, Mike; Wisniewski, Przemek; Czernecki, Robert; Kucharski, Robert; Targowski, Grzegorz; Watson, Scott; Kelly, Antony E.

    2014-10-01

    The latest developments in AlGaInN laser diode technology are reviewed for defence, security and sensing applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., i.e, 380nm, to the visible, i.e., 530nm, by tuning the indium content of the laser GaInN quantum well. Advantages of using Plasma assisted MBE (PAMBE) compared to more conventional MOCVD epitaxy to grow AlGaInN laser structures are highlighted. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of <100mW in the 400-420nm wavelength range that are suitable for telecom applications. Visible light communications at high frequency (up to 2.5 Gbit/s) using a directly modulated 422nm Gallium-nitride (GaN) blue laser diode is reported. High power operation of AlGaInN laser diodes is demonstrated with a single chip, AlGaInN laser diode `mini-array' with a common p-contact configuration at powers up to 2.5W cw at 410nm. Low defectivity and highly uniform GaN substrates allow arrays and bars of nitride lasers to be fabricated. GaN laser bars of up to 5mm with 20 emitters, mounted in a CS mount package, give optical powers up to 4W cw at ~410nm with a common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space and/or fibre optic system integration within a very small form-factor.or.

  14. Short wavelength optics for future free electron lasers

    International Nuclear Information System (INIS)

    Attwood, D.T.

    1984-04-01

    Although much free-electron laser work is directed toward achieving sufficient single-pass gain to be useful for research purposes, the availability of mirrors of high reflectance for the vacuum ultraviolet and soft x-ray regime would make resonant cavities a possibility. In addition, as in ordinary synchrotron radiation work, mirrors are required for the construction of realistic experiments and for beam manipulation purposes such as folding and extraction. The Working Group discussed a number of approaches to reflecting optics for free electron lasers, which are summarized here, and described in some detail. 16 references, 2 figures

  15. Compact silicon photonic wavelength-tunable laser diode with ultra-wide wavelength tuning range

    Energy Technology Data Exchange (ETDEWEB)

    Kita, Tomohiro, E-mail: tkita@ecei.tohoku.ac.jp; Tang, Rui; Yamada, Hirohito [Graduate School of Engineering, Tohoku University, 6-6-05 Aramaki-Aza-Aoba, Aoba-ku, Sendai 980-8579 (Japan)

    2015-03-16

    We present a wavelength-tunable laser diode with a 99-nm-wide wavelength tuning range. It has a compact wavelength-tunable filter with high wavelength selectivity fabricated using silicon photonics technology. The silicon photonic wavelength-tunable filter with wide wavelength tuning range was realized using two ring resonators and an asymmetric Mach-Zehnder interferometer. The wavelength-tunable laser diode fabricated by butt-joining a silicon photonic filter and semiconductor optical amplifier shows stable single-mode operation over a wide wavelength range.

  16. Compact silicon photonic wavelength-tunable laser diode with ultra-wide wavelength tuning range

    International Nuclear Information System (INIS)

    Kita, Tomohiro; Tang, Rui; Yamada, Hirohito

    2015-01-01

    We present a wavelength-tunable laser diode with a 99-nm-wide wavelength tuning range. It has a compact wavelength-tunable filter with high wavelength selectivity fabricated using silicon photonics technology. The silicon photonic wavelength-tunable filter with wide wavelength tuning range was realized using two ring resonators and an asymmetric Mach-Zehnder interferometer. The wavelength-tunable laser diode fabricated by butt-joining a silicon photonic filter and semiconductor optical amplifier shows stable single-mode operation over a wide wavelength range

  17. Two mode optical fiber in space optics communication

    Science.gov (United States)

    Hampl, Martin

    2017-11-01

    In our contribution we propose to use of a two-mode optical fiber as a primary source in a transmitting optical head instead of the laser diode. The distribution of the optical intensity and the complex degree of the coherence on the output aperture of the lens that is irradiated by a step-index weakly guiding optical fiber is investigated. In our treatment we take into account weakly guided modes with polarization corrections to the propagation constant and unified theory of second order coherence and polarization of electromagnetic beams.

  18. Nanofluidic diode and bipolar transistor.

    Science.gov (United States)

    Daiguji, Hirofumi; Oka, Yukiko; Shirono, Katsuhiro

    2005-11-01

    Theoretical modeling of ionic distribution and transport in a nanochannel containing a surface charge on its wall, 30 nm high and 5 microm long, suggests that ionic current can be controlled by locally modifying the surface charge density through a gate electrode, even if the electrical double layers are not overlapped. When the surface charge densities at the right and left halves of a channel are the same absolute value but of different signs, this could form the basis of a nanofluidic diode. When the surface charge density at the middle part of a channel is modified, this could form the basis of a nanofluidic bipolar transistor.

  19. Laser cooling of beryllium ions using a frequency-doubled 626 nm diode laser.

    Science.gov (United States)

    Cozijn, F M J; Biesheuvel, J; Flores, A S; Ubachs, W; Blume, G; Wicht, A; Paschke, K; Erbert, G; Koelemeij, J C J

    2013-07-01

    We demonstrate laser cooling of trapped beryllium ions at 313 nm using a frequency-doubled extended cavity diode laser operated at 626 nm, obtained by cooling a ridge waveguide diode laser chip to -31°C. Up to 32 mW of narrowband 626 nm laser radiation is obtained. After passage through an optical isolator and beam shaping optics, 14 mW of 626 nm power remains of which 70% is coupled into an external enhancement cavity containing a nonlinear crystal for second-harmonic generation. We produce up to 35 μW of 313 nm radiation, which is subsequently used to laser cool and detect 6×10(2) beryllium ions, stored in a linear Paul trap, to a temperature of about 10 mK, as evidenced by the formation of Coulomb crystals. Our setup offers a simple and affordable alternative for Doppler cooling, optical pumping, and detection to presently used laser systems.

  20. Output Properties of Transparent Submount Packaged FlipChip Light-Emitting Diode Modules

    Directory of Open Access Journals (Sweden)

    Preetpal Singh

    2016-06-01

    Full Text Available Flip chip technology has been widely adopted in modern power light-emitting diode (LED fabrications and its output efficiency is closely related to the submount material properties. Here, we present the electrical, optical and thermal properties of flip chip light-emitting diodes mounted on transparent sapphire and borosilicate glass which have shown a higher output luminous flux when compared to the traditional non-transparent mounted LEDs. Exhibiting both better thermal conductivity and good optical transparency, flip chip LEDs with a sapphire submount showed superior performance when compared to the non-transparent silicon submount ones, and also showed better optical performance than the flip chip LEDs mounted on transparent but poor-thermal-conducting glass substrates. The correspondent analysis was carried out using ANSYS 14 to compare the experimental thermal imaging with the simulation results. TracePro software was also used to check the output luminous flux dependency on different LED mounting designs.

  1. Luminescence and the light emitting diode the basics and technology of leds and the luminescence properties of the materials

    CERN Document Server

    Williams, E W; Pamplin, BR

    2013-01-01

    Luminescence and the Light Emitting Diode: The Basics and Technology of LEDS and the Luminescence Properties of the Materials focuses on the basic physics and technology of light emitting diodes (LEDS) and pn junction lasers as well as their luminescence properties. Optical processes in semiconductors and the useful devices which can be made are discussed. Comprised of 10 chapters, this book begins with an introduction to the crystal structure and growth, as well as the optical and electrical properties of LED materials. The detailed fabrication of the LED is then considered, along with the lu

  2. Benefits of quantum well intermixing in high power diode lasers

    Science.gov (United States)

    Najda, Stephen P.; Bacchin, Gianluca; Qiu, Bocang; Liu, Xuefeng; Kowalski, Olek P.; Silver, Mark; McDougall, Stewart D.; Hamilton, Craig J.; Marsh, John H.

    2004-05-01

    Quantum well intermixing (QWI) can bring considerable benefits to the reliability and performance of high power laser diodes by intermixing the facet regions of the device to increase the band-gap and hence eliminate absorption, avoiding catastrophic optical damage (COD). The non-absorbing mirror (NAM) regions of the laser cavity can be up to ~20% of the cavity length, giving an additional benefit on cleave tolerances, to fabricate very large element arrays of high power, individually addressable, single mode lasers. As a consequence, large arrays of single mode lasers can bring additional benefits for packaging in terms of hybrization and integration into an optics system. Our QWI techniques have been applied to a range of material systems, including GaAs/AlGaAs, (Al)GaAsP/AlGaAs and InGaAs/GaAs.

  3. Laser diode package with enhanced cooling

    Science.gov (United States)

    Deri, Robert J [Pleasanton, CA; Kotovsky, Jack [Oakland, CA; Spadaccini, Christopher M [Oakland, CA

    2011-09-13

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  4. Diode laser photocoagulation in PHACES syndrome hemangiomas: a case series

    Science.gov (United States)

    Romeo, U.; Russo, N.; Polimeni, A.; Favia, G.; Lacaita, M. G.; Limongelli, L.; Franco, S.

    2014-01-01

    PHACES syndrome is a pediatric syndrome with cutaneous and extra-cutaneous manifestations, such as Posterior fossa defects, Hemangiomas, Arterial lesions, Cardiac abnormalities/aortic coarctation, Eye abnormalities and Sternal cleft. Facial hemangiomas affect the 75% of patients and may arise on the oral mucosa or perioral cutaneous regions. In this study we treated 26 Intraoral Haemangiomas (IH) and 15 Perioral Haemangiomas (PH) with diode laser photocoagulation using a laser of 800+/-10nm of wavelength. For IH treatment an optical fiber of 320 μm was used, and the laser power was set ted at 4 W (t-on 200 ms / t-off 400ms; fluence: 995 J/cm2). For PH treatment an optical fiber of 400 μm at the power of 5 W was used (t-on 100 ms / t-off 300 ms; fluence: 398 J/cm2). IH healed after one session (31%), the other (69%) after two sessions of Laser therapy. In each session, only a limited area of the PH was treated, obtaining a progressive improvement of the lesion. Diode laser photocoagulation is an effective option of treatment for IH and PH in patients affected by PHACE because of its minimal invasiveness. Moreover laser photocoagulation doesn't have side effects and can be performed repeatedly without cumulative toxicity. Nevertheless, more studies are required to evaluate the effectiveness of the therapy in mid and long time period.

  5. New Optoelectronic Technology Simplified for Organic Light Emitting Diode (OLED

    Directory of Open Access Journals (Sweden)

    Andre F. S. Guedes

    2014-06-01

    Full Text Available The development of Organic Light Emitting Diode (OLED, using an optically transparent substrate material and organic semiconductor materials, has been widely utilized by the electronic industry when producing new technological products. The OLED are the base Poly (3,4-ethylenedioxythiophene, PEDOT, and Polyaniline, PANI, were deposited in Indium Tin Oxide, ITO, and characterized by UV-Visible Spectroscopy (UV-Vis, Optical Parameters (OP and Scanning Electron Microscopy (SEM. In addition, the thin film obtained by the deposition of PANI, prepared in perchloric acid solution, was identified through PANI-X1. The result obtained by UV-Vis has demonstrated that the Quartz/ITO/PEDOT/PANI-X1 layer does not have displacement of absorption for wavelengths greaters after spin-coating and electrodeposition. Thus, the spectral irradiance of the OLED informed the irradiance of 100 W/m2, and this result, compared with the standard Light Emitting Diode (LED, has indicated that the OLED has higher irradiance. After 1000 hours of electrical OLED tests, the appearance of nanoparticles visible for images by SEM, to the migration process of organic semiconductor materials, was present, then. Still, similar to the phenomenon of electromigration observed in connections and interconnections of microelectronic devices, the results have revealed a new mechanism of migration, which raises the passage of electric current in OLED.

  6. Stopping atoms with diode lasers

    International Nuclear Information System (INIS)

    Watts, R.N.; Wieman, C.E.

    1986-01-01

    The use of light pressure to cool and stop neutral atoms has been an area of considerable interest recently. Cooled neutral atoms are needed for a variety of interesting experiments involving neutral atom traps and ultrahigh-resolution spectroscopy. Laser cooling of sodium has previously been demonstrated using elegant but quite elaborate apparatus. These techniques employed stabilized dye lasers and a variety of additional sophisticated hardware. The authors have demonstrated that a frequency chirp technique can be implemented using inexpensive diode lasers and simple electronics. In this technique the atoms in an atomic beam scatter resonant photons from a counterpropagating laser beam. The momentum transfer from the photons slows the atoms. The primary difficulty is that as the atoms slow their Doppler shift changes, and so they are no longer in resonance with the incident photons. In the frequency chirp technique this is solved by rapidly changing the laser frequency so that the atoms remain in resonance. To achieve the necessary frequency sweep with a dye laser one must use an extremely sophisticated high-speed electrooptic modulator. With a diode laser, however, the frequency can be smoothly and rapidly varied over many gigahertz simply by changing the injection current

  7. Aluminum-nanodisc-induced collective lattice resonances: Controlling the light extraction in organic light emitting diodes

    Science.gov (United States)

    Auer-Berger, Manuel; Tretnak, Veronika; Wenzl, Franz-Peter; Krenn, Joachim R.; List-Kratochvil, Emil J. W.

    2017-10-01

    We examine aluminum-nanodisc-induced collective lattice resonances as a means to enhance the efficiency of organic light emitting diodes. Thus, nanodisc arrays were embedded in the hole transporting layer of a solution-processed phosphorescent organic blue-light emitting diode. Through extinction spectroscopy, we confirm the emergence of array-induced collective lattice resonances within the organic light emitting diode. Through finite-difference time domain simulations, we show that the collective lattice resonances yield an enhancement of the electric field intensity within the emissive layer. The effectiveness for improving the light generation and light outcoupling is demonstrated by electro-optical characterization, realizing a gain in a current efficiency of 35%.

  8. Injection locking of a high power ultraviolet laser diode for laser cooling of ytterbium atoms.

    Science.gov (United States)

    Hosoya, Toshiyuki; Miranda, Martin; Inoue, Ryotaro; Kozuma, Mikio

    2015-07-01

    We developed a high-power laser system at a wavelength of 399 nm for laser cooling of ytterbium atoms with ultraviolet laser diodes. The system is composed of an external cavity laser diode providing frequency stabilized output at a power of 40 mW and another laser diode for amplifying the laser power up to 220 mW by injection locking. The systematic method for optimization of our injection locking can also be applied to high power light sources at any other wavelengths. Our system does not depend on complex nonlinear frequency-doubling and can be made compact, which will be useful for providing light sources for laser cooling experiments including transportable optical lattice clocks.

  9. Fast random-number generation using a diode laser's frequency noise characteristic

    Science.gov (United States)

    Takamori, Hiroki; Doi, Kohei; Maehara, Shinya; Kawakami, Kohei; Sato, Takashi; Ohkawa, Masashi; Ohdaira, Yasuo

    2012-02-01

    Random numbers can be classified as either pseudo- or physical-random, in character. Pseudo-random numbers are generated by definite periodicity, so, their usefulness in cryptographic applications is somewhat limited. On the other hand, naturally-generated physical-random numbers have no calculable periodicity, thereby making them ideal for the task. Diode lasers' considerable wideband noise gives them tremendous capacity for generating physical-random numbers, at a high rate of speed. We measured a diode laser's output with a fast photo detector, and evaluated the binary-numbers from the diode laser's frequency noise characteristics. We then identified and evaluated the binary-number-line's statistical properties. We also investigate the possibility that much faster physical-random number parallel-generation is possible, using separate outputs of different optical-path length and character, which we refer to as "coherence collapse".

  10. Laser source for dimensional metrology: investigation of an iodine stabilized system based on narrow linewidth 633 nm DBR diode

    Czech Academy of Sciences Publication Activity Database

    Řeřucha, Šimon; Yacoot, A.; Pham, Minh Tuan; Čížek, Martin; Hucl, Václav; Lazar, Josef; Číp, Ondřej

    2017-01-01

    Roč. 28, č. 4 (2017), s. 1-11, č. článku 045204. ISSN 0957-0233 R&D Projects: GA ČR GB14-36681G; GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01; GA TA ČR TE01020233 Institutional support: RVO:68081731 Keywords : optical metrology * DBR laser diode * frequency stabilization * laser interferometry * dimensional metrology * iodine stabilization * displacement measurement Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 1.585, year: 2016

  11. Gigashot Optical Laser Demonstrator

    Energy Technology Data Exchange (ETDEWEB)

    Deri, R. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2015-10-13

    The Gigashot Optical Laser Demonstrator (GOLD) project has demonstrated a novel optical amplifier for high energy pulsed lasers operating at high repetition rates. The amplifier stores enough pump energy to support >10 J of laser output, and employs conduction cooling for thermal management to avoid the need for expensive and bulky high-pressure helium subsystems. A prototype amplifier was fabricated, pumped with diode light at 885 nm, and characterized. Experimental results show that the amplifier provides sufficient small-signal gain and sufficiently low wavefront and birefringence impairments to prove useful in laser systems, at repetition rates up to 60 Hz.

  12. High light extraction efficiency in bulk-GaN based volumetric violet light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    David, Aurelien, E-mail: adavid@soraa.com; Hurni, Christophe A.; Aldaz, Rafael I.; Cich, Michael J.; Ellis, Bryan; Huang, Kevin; Steranka, Frank M.; Krames, Michael R. [Soraa Inc., 6500 Kaiser Dr., Fremont, California 94555 (United States)

    2014-12-08

    We report on the light extraction efficiency of III-Nitride violet light-emitting diodes with a volumetric flip-chip architecture. We introduce an accurate optical model to account for light extraction. We fabricate a series of devices with varying optical configurations and fit their measured performance with our model. We show the importance of second-order optical effects like photon recycling and residual surface roughness to account for data. We conclude that our devices reach an extraction efficiency of 89%.

  13. Optically-gated Non-latched High Gain Power Device

    Science.gov (United States)

    2008-11-21

    switching times of an optically-controlled power bipolar junction transistor ( BJT ) is reported in [20] using light-emitting diode (LED)-phototransistor pair...GaAs based optically-trigegred power transistor (OTPT) has been developed for fast, repetitive, non-latched switching and control of power...OF OPTICAL INTENSITY MODULATION 8 2.1. Optically-triggered power transistor structure 9 2.2 On-state resistance (Ron) of OTPT modulated by optical

  14. Numerical analysis of high-power broad-area laser diode with improved heat sinking structure using epitaxial liftoff technique

    Science.gov (United States)

    Kim, Younghyun; Sung, Yunsu; Yang, Jung-Tack; Choi, Woo-Young

    2018-02-01

    The characteristics of high-power broad-area laser diodes with the improved heat sinking structure are numerically analyzed by a technology computer-aided design based self-consistent electro-thermal-optical simulation. The high-power laser diodes consist of a separate confinement heterostructure of a compressively strained InGaAsP quantum well and GaInP optical cavity layers, and a 100-μm-wide rib and a 2000-μm long cavity. In order to overcome the performance deteriorations of high-power laser diodes caused by self-heating such as thermal rollover and thermal blooming, we propose the high-power broad-area laser diode with improved heat-sinking structure, which another effective heat-sinking path toward the substrate side is added by removing a bulk substrate. It is possible to obtain by removing a 400-μm-thick GaAs substrate with an AlAs sacrificial layer utilizing well-known epitaxial liftoff techniques. In this study, we present the performance improvement of the high-power laser diode with the heat-sinking structure by suppressing thermal effects. It is found that the lateral far-field angle as well as quantum well temperature is expected to be improved by the proposed heat-sinking structure which is required for high beam quality and optical output power, respectively.

  15. Wearable Optical Sensors

    KAUST Repository

    Ballard, Zachary S.

    2017-07-12

    The market for wearable sensors is predicted to grow to $5.5 billion by 2025, impacting global health in unprecedented ways. Optics and photonics will play a key role in the future of these wearable technologies, enabling highly sensitive measurements of otherwise invisible information and parameters about our health and surrounding environment. Through the implementation of optical wearable technologies, such as heart rate, blood pressure, and glucose monitors, among others, individuals are becoming more empowered to generate a wealth of rich, multifaceted physiological and environmental data, making personalized medicine a reality. Furthermore, these technologies can also be implemented in hospitals, clinics, point-of-care offices, assisted living facilities or even in patients’ homes for real-time, remote patient monitoring, creating more expeditious as well as resource-efficient systems. Several key optical technologies make such sensors possible, including e.g., optical fiber textiles, colorimetric, plasmonic, and fluorometric sensors, as well as Organic Light Emitting Diode (OLED) and Organic Photo-Diode (OPD) technologies. These emerging technologies and platforms show great promise as basic sensing elements in future wearable devices and will be reviewed in this chapter along-side currently existing fully integrated wearable optical sensors.

  16. High power multiple wavelength diode laser stack for DPSSL application without temperature control

    Science.gov (United States)

    Hou, Dong; Yin, Xia; Wang, Jingwei; Chen, Shi; Zhan, Yun; Li, Xiaoning; Fan, Yingmin; Liu, Xingsheng

    2018-02-01

    High power diode laser stack is widely used in pumping solid-state laser for years. Normally an integrated temperature control module is required for stabilizing the output power of solid-state laser, as the output power of the solid-state laser highly depends on the emission wavelength and the wavelength shift of diode lasers according to the temperature changes. However the temperature control module is inconvenient for this application, due to its large dimension, high electric power consumption and extra adding a complicated controlling system. Furthermore, it takes dozens of seconds to stabilize the output power when the laser system is turned on. In this work, a compact hard soldered high power conduction cooled diode laser stack with multiple wavelengths is developed for stabilizing the output power of solid-state laser in a certain temperature range. The stack consists of 5 laser bars with the pitch of 0.43mm. The peak output power of each bar in the diode laser stack reaches as much as 557W and the combined lasing wavelength spectrum profile spans 15nm. The solidstate laser, structured with multiple wavelength diode laser stacks, allows the ambient temperature change of 65°C without suddenly degrading the optical performance.

  17. High temperature semiconductor diode laser pumps for high energy laser applications

    Science.gov (United States)

    Campbell, Jenna; Semenic, Tadej; Guinn, Keith; Leisher, Paul O.; Bhunia, Avijit; Mashanovitch, Milan; Renner, Daniel

    2018-02-01

    Existing thermal management technologies for diode laser pumps place a significant load on the size, weight and power consumption of High Power Solid State and Fiber Laser systems, thus making current laser systems very large, heavy, and inefficient in many important practical applications. To mitigate this thermal management burden, it is desirable for diode pumps to operate efficiently at high heat sink temperatures. In this work, we have developed a scalable cooling architecture, based on jet-impingement technology with industrial coolant, for efficient cooling of diode laser bars. We have demonstrated 60% electrical-to-optical efficiency from a 9xx nm two-bar laser stack operating with propylene-glycolwater coolant, at 50 °C coolant temperature. To our knowledge, this is the highest efficiency achieved from a diode stack using 50 °C industrial fluid coolant. The output power is greater than 100 W per bar. Stacks with additional laser bars are currently in development, as this cooler architecture is scalable to a 1 kW system. This work will enable compact and robust fiber-coupled diode pump modules for high energy laser applications.

  18. Optoelectronic devices based on electrically tunable p-n diodes in a monolayer dichalcogenide

    Science.gov (United States)

    Baugher, Britton W. H.; Churchill, Hugh O. H.; Yang, Yafang; Jarillo-Herrero, Pablo

    2014-04-01

    The p-n junction is the functional element of many electronic and optoelectronic devices, including diodes, bipolar transistors, photodetectors, light-emitting diodes and solar cells. In conventional p-n junctions, the adjacent p- and n-type regions of a semiconductor are formed by chemical doping. Ambipolar semiconductors, such as carbon nanotubes, nanowires and organic molecules, allow for p-n junctions to be configured and modified by electrostatic gating. This electrical control enables a single device to have multiple functionalities. Here, we report ambipolar monolayer WSe2 devices in which two local gates are used to define a p-n junction within the WSe2 sheet. With these electrically tunable p-n junctions, we demonstrate both p-n and n-p diodes with ideality factors better than 2. Under optical excitation, the diodes demonstrate a photodetection responsivity of 210 mA W-1 and photovoltaic power generation with a peak external quantum efficiency of 0.2%, promising values for a nearly transparent monolayer material in a lateral device geometry. Finally, we demonstrate a light-emitting diode based on monolayer WSe2. These devices provide a building block for ultrathin, flexible and nearly transparent optoelectronic and electronic applications based on ambipolar dichalcogenide materials.

  19. Checker Takes the Guesswork out of Diode Identification

    Science.gov (United States)

    Harman, Charles

    2011-01-01

    At technical colleges and secondary-level tech schools, students enrolled in basic electronics labs who have learned about diodes that do rectification are used to seeing power diodes like the 1N4001. When the students are introduced to low-power zener diodes and signal diodes, component identification gets more complex. If the small zeners are…

  20. Optics/Optical Diagnostics Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Optics/Optical Diagnostics Laboratory supports graduate instruction in optics, optical and laser diagnostics and electro-optics. The optics laboratory provides...

  1. Blue-emitting laser diodes

    Science.gov (United States)

    Nakano, K.; Ishibashi, A.

    This paper reviews the recent results of blue-emitting laser diodes. These devices are based on ZnMgSSe alloy II-VI semiconductors. Recently we have achieved room temperature continuous-wave operation of ZnMgSSe blue lasers for the first time. ZnMgSSe alloys offer a wide range of band-gap energy from 2.8 to 4.5 eV, while maintaining lattice matching to GaAs substrates. These characteristics make ZnMgSSe suitable for cladding layers of blue lasers. In this article, the feasibilities of ZnMgSSe will be reviewed. The laser structures and characteristics will be also mentioned.

  2. Phototherapy with Light Emitting Diodes

    Science.gov (United States)

    2018-01-01

    Within the field of dermatology, advances in the use of light emitting diodes (LEDs) have led to their clinical application for a variety of medical and cosmetic uses. Of note, one phototherapy device has demonstrated beneficial effects over a range of clinical applications (Omnilux™; GlobalMed Technologies, Glen Ellen, California). The study included a literature review of published studies. Using LEDs with frequencies of 415nm (blue), 633nm (red), and 830nm (infrared), this device has demonstrated significant results for the treatment of medical conditions, including mild-to-moderate acne vulgaris, wound healing, psoriasis, squamous cell carcinoma in situ (Bowen’s disease), basal cell carcinoma, actinic keratosis, and cosmetic applications. Although photodynamic therapy with the photosensitizer 5-aminolevulinic acid might cause stinging and burning, phototherapy is free of adverse events. We determined that phototherapy using LEDs is beneficial for a range of medical and aesthetic conditions encountered in the dermatology practice. This treatment displays an excellent safety profile.

  3. A Portable Diode Array Spectrophotometer.

    Science.gov (United States)

    Stephenson, David

    2016-05-01

    A cheap portable visible light spectrometer is presented. The spectrometer uses readily sourced items and could be constructed by anyone with a knowledge of electronics. The spectrometer covers the wavelength range 450-725 nm with a resolution better than 5 nm. The spectrometer uses a diffraction grating to separate wavelengths, which are detected using a 128-element diode array, the output of which is analyzed using a microprocessor. The spectrum is displayed on a small liquid crystal display screen and can be saved to a micro SD card for later analysis. Battery life (2 × AAA) is estimated to be 200 hours. The overall dimensions of the unit are 120 × 65 × 60 mm, and it weighs about 200 g. © The Author(s) 2016.

  4. Low-cost 420nm blue laser diode for tissue cutting and hemostasis

    Science.gov (United States)

    Linden, Kurt J.

    2016-03-01

    This paper describes the use of a 420 nm blue laser diode for possible surgery and hemostasis. The optical absorption of blood-containing tissue is strongly determined by the absorption characteristics of blood. Blood is primarily comprised of plasma (yellowish extracellular fluid that is approximately 95% water by volume) and formed elements: red blood cells (RBCs), white blood cells (WBCs) and platelets. The RBCs (hemoglobin) are the most numerous, and due to the spectral absorption characteristics of hemoglobin, the optical absorption of blood has a strong relative maximum value in the 420 nm blue region of the optical spectrum. Small, low-cost laser diodes emitting at 420 nm with tens of watts of continuous wave (CW) optical power are becoming commercially available. Experiments on the use of such laser diodes for tissue cutting with simultaneous hemostasis were carried out and are here described. It was found that 1 mm deep x 1 mm wide cuts can be achieved in red meat at a focused laser power level of 3 W moving at a velocity of ~ 1 mm/s. The peripheral necrosis and thermal damage zone extended over a width of approximately 0.5 mm adjacent to the cuts. Preliminary hemostasis experiments were carried out with fresh equine blood in Tygon tubing, where it was demonstrated that cauterization can occur in regions of intentional partial tubing puncture.

  5. 760nm: a new laser diode wavelength for hair removal modules

    Science.gov (United States)

    Wölz, Martin; Zorn, Martin; Pietrzak, Agnieszka; Kindsvater, Alex; Meusel, Jens; Hülsewede, Ralf; Sebastian, Jürgen

    2015-02-01

    A new high-power semiconductor laser diode module, emitting at 760 nm is introduced. This wavelength permits optimum treatment results for fair skin individuals, as demonstrated by the use of Alexandrite lasers in dermatology. Hair removal applications benefit from the industry-standard diode laser design utilizing highly efficient, portable and light-weight construction. We show the performance of a tap-water-cooled encapsulated laser diode stack with a window for use in dermatological hand-pieces. The stack design takes into account the pulse lengths required for selectivity in heating the hair follicle vs. the skin. Super-long pulse durations place the hair removal laser between industry-standard CW and QCW applications. The new 760 nm laser diode bars are 30% fill factor devices with 1.5 mm long resonator cavities. At CW operation, these units provide 40 W of optical power at 43 A with wall-plug-efficiency greater than 50%. The maximum output power before COMD is 90 W. Lifetime measurements starting at 40 W show an optical power loss of 20% after about 3000 h. The hair removal modules are available in 1x3, 1x8 and 2x8 bar configurations.

  6. Improved Thermoelectrically Cooled Laser-Diode Assemblies

    Science.gov (United States)

    Glesne, Thomas R.; Schwemmer, Geary K.; Famiglietti, Joe

    1994-01-01

    Cooling decreases wavelength and increases efficiency and lifetime. Two improved thermoelectrically cooled laser-diode assemblies incorporate commercial laser diodes providing combination of both high wavelength stability and broad wavelength tuning which are broadly tunable, highly stable devices for injection seeding of pulsed, high-power tunable alexandrite lasers used in lidar remote sensing of water vapor at wavelengths in vicinity of 727 nanometers. Provide temperature control needed to take advantage of tunability of commercial AlGaAs laser diodes in present injection-seeding application.

  7. Cern DD4424 ROM Diode Matrix

    CERN Multimedia

    A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

  8. A Diode Matrix model M792

    CERN Multimedia

    A diode matrix is an extremely low-density form of read-only memory. It's one of the earliest forms of ROMs (dating back to the 1950s). Each bit in the ROM is represented by the presence or absence of one diode. The ROM is easily user-writable using a soldering iron and pair of wire cutters.This diode matrix board is a floppy disk boot ROM for a PDP-11, and consists of 32 16-bit words. When you access an address on the ROM, the circuit returns the represented data from that address.

  9. Light emitting diode package element with internal meniscus for bubble free lens placement

    Science.gov (United States)

    Tarsa, Eric; Yuan, Thomas C.; Becerra, Maryanne; Yadev, Praveen

    2010-09-28

    A method for fabricating a light emitting diode (LED) package comprising providing an LED chip and covering at least part of the LED chip with a liquid encapsulant having a radius of curvature. An optical element is provided having a bottom surface with at least a portion having a radius of curvature larger than the liquid encapsulant. The larger radius of curvature portion of the optical element is brought into contact with the liquid encapsulant. The optical element is then moved closer to the LED chip, growing the contact area between said optical element and said liquid encapsulant. The liquid encapsulant is then cured. A light emitting diode comprising a substrate with an LED chip mounted to it. A meniscus ring is on the substrate around the LED chip with the meniscus ring having a meniscus holding feature. An inner encapsulant is provided over the LED chip with the inner encapsulant having a contacting surface on the substrate, with the meniscus holding feature which defines the edge of the contacting surface. An optical element is included having a bottom surface with at least a portion that is concave. The optical element is arranged on the substrate with the concave portion over the LED chip. A contacting encapsulant is included between the inner encapsulant and optical element.

  10. Semiconductor laser diodes and the design of a D.C. powered laser diode drive unit

    OpenAIRE

    Cappuccio, Joseph C., Jr.

    1988-01-01

    Approved for public release; distribution is unlimited This thesis addresses the design, development and operational analysis of a D.C. powered semiconductor laser diode drive unit. A laser diode requires an extremely stable power supply since a picosecond spike of current or power supply switching transient could result in permanent damage. The design offers stability and various features for operational protection of the laser diode. The ability to intensity modulate (analog) and pulse m...

  11. Diode-side-pumped monolithic Nd:YAG slab laser

    Science.gov (United States)

    Šulc, Jan; Jelínek, Michal; Kubeček, Václav; Jelínková, Helena; Nejezchleb, Karel; Škoda, Václav

    2017-05-01

    Compact, high-efficient, side-pumped monolithic Nd:YAG slab laser is presented. Designed active crystal shape ensures four internal reflections of generated laser radiation forming a ring resonator with high gain. A horizontal projection of the active medium form was a isosceles trapezoid with 18.6 mm long base, and 5 mm height. The angels between long base and legs are 87 deg. The thickness of the slab was 4 mm. Both base-sides and one leg-side was high reflective for lasing radiation. Second leg-side was partially reflective for lasing radiation and serves as an output coupler. The longer base-side was highly transparent for pumping radiation. The opposite base-side was highly reflecting for pump. To increase the pump absorption efficiency Nd-doping concentration was 1.4 % Nd/Y. As a pump source, single-bar quasi-cw fast-axis collimated laser diode JOLD-180-QPFN (Jenoptik) with peak power 180 W at 808 nm and output beam 10 0.9 mm without any further optics was used for slab side-pumping. The pumping pulses with repetition rate 5 Hz were 250 μs long (maximum pump energy 39 mJ). The Nd:YAG laser was operated at 1.06 µm. Two external mirrors (one totally reflecting, second with reflectivity 80 % at 1.06 μm) were used to form the oscillator. The laser was tested in the free-running regime. The maximum laser output energy reached was 5.9 mJ which corresponds to optical-to-optical efficiency of 15 %. The laser slope efficiency in respect to laser diode output was 20 %. The divergence of multimode output beam was 7 × 2.5mrad.

  12. Latest developments in AlGaInN laser diode technology for defence applications

    Science.gov (United States)

    Najda, S. P.; Perlin, P.; Suski, T.; Marona, L.; Boćkowski, M.; Leszczyński, M.; Wisniewski, P.; Czernecki, R.; Kucharski, R.; Targowski, G.

    2012-09-01

    The latest developments in AlGaInN laser diode technology is reviewed for defence applications such as underwater telecommunications, sensor systems etc. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., i.e, 380nm, to the visible, i.e., 530nm, by tuning the indium content of the laser GaInN quantum well. Advantages of using Plasma assisted MBE (PAMBE) compared to more conventional MOCVD epitaxy to grow AlGaInN laser structures are highlighted. Ridge waveguide laser diode structures are fabricated to achieve single mode operation with optical powers of <100mW in the 400-420nm wavelength range with high reliability. High power operation of AlGaInN laser diodes is also reviewed. We demonstrate the operation of a single chip, high power AlGaInN laser diode 'mini-array' consisting of a 3 stripe common p-contact configuration at powers up to 2.5W cw in the 408-412 nm wavelength range. Low defectivity and highly uniform TopGaN GaN substrates allow arrays and bars of nitride lasers to be fabricated. Packaging of nitride laser diodes is substantially different compared to GaAs laser technology and new processes and techniques are required to optimize the optical power from a nitride laser bar. Laser bars of up to 5mm with 20 emitters have shown optical powers up to 4W cw at ~410nm with a common contact configuration. An alternative package configuration for AlGaInN laser arrays allows for each individual laser to be individually addressable allowing complex free-space and/or fibre optic system integration within a very small form-factor. TopGaN are developing a new range of high power laser array technology over the u.v.- visible spectrum together with new packaging solutions for optical integration.

  13. PERFORMANCE OPTIMIZATION OF THE DIODE-PUMPED SOLID-STATE LASER FOR SPACE APPLICATIONS

    Directory of Open Access Journals (Sweden)

    D. A. Arkhipov

    2015-11-01

    Full Text Available Subject of Research. Thermophysical and optical techniques of parameter regulation for diode pumped solid-state laser are studied as applied to space laser communication and laser ranging lines. Methods. The investigations are carried out on the base of the original design of diode pumped solid-state laser module that includes the following: Nd:YAG slab element, diode pumped by 400W QCW produced by NORTHROP GRUMMAN; two-pass unstable resonator with rotation of the laser beam aperture about its axis through 1800; the output mirror of the resonator with a variable reflection coefficient; hyperthermal conductive plates for thermal stabilization of the laser diode generation modes. The presence of thermal conductive plates excludes conventional running water systems applied as cooling systems for solid-state laser components. The diodes temperature stabilization is achieved by applying the algorithm of pulse-width modulation of power of auxiliary electric heaters. To compensate for non-stationary thermal distortions of the slab refractive index, the laser resonator scheme comprises a prism reflector with an apex angle of 1200. Narrow sides of the prism are covered with reflective coating, and its wide side is sprayed with antireflection coating. The beam aperture is turned around its axis through 1800 because of triple reflection of the beam inside the prism. The turning procedure leads to compensating for the output beam phase distortions in view of symmetric character of the aberrations of slab refractive index. To suppress parasitic oscillations inside the slab, dielectric coatings of wide sides of the slab are used. Main Results. We have demonstrated theoretically and experimentally that the usage of hyperthermal conductive plates together with the algorithm of pulse-width modulation provides stabilizing of the diode substrate temperature accurate within ± 0.1 °С and smoothing the temperature distribution along the plate surface accurate

  14. Diode Laser Ear Piercing: A Novel Technique.

    Science.gov (United States)

    Suseela, Bibilash Babu; Babu, Preethitha; Chittoria, Ravi Kumar; Mohapatra, Devi Prasad

    2016-01-01

    Earlobe piercing is a common office room procedure done by a plastic surgeon. Various methods of ear piercing have been described. In this article, we describe a novel method of laser ear piercing using the diode laser. An 18-year-old female patient underwent an ear piercing using a diode laser with a power of 2.0 W in continuous mode after topical local anaesthetic and pre-cooling. The diode laser was fast, safe, easy to use and highly effective way of ear piercing. The advantages we noticed while using the diode laser over conventional methods were more precision, minimal trauma with less chances of hypertrophy and keloids, no bleeding with coagulation effect of laser, less time taken compared to conventional method and less chance of infection due to thermal heat effect of laser.

  15. NAMMA DIODE LASER HYGROMETER (DLH) V1

    Data.gov (United States)

    National Aeronautics and Space Administration — The Diode Laser Hygrometer (DLH), a near-infrared spectrometer operating from aircraft platforms, was developed by NASA's Langley and Ames Research Centers. It...

  16. NAMMA DIODE LASER HYGROMETER (DLH) V1

    Data.gov (United States)

    National Aeronautics and Space Administration — The NAMMA Diode Laser Hygrometer (DLH) dataset uses the DLH, a near-infrared spectrometer operating from aircraft platforms, was developed by NASA's Langley and Ames...

  17. Mobile fiber-optic laser Doppler anemometer.

    Science.gov (United States)

    Stieglmeier, M; Tropea, C

    1992-07-20

    A laser Doppler anemometer (LDA) has been developed that combines the compactness and low power consumption of laser diodes and avalanche photodiodes with the flexibility and possibility of miniaturization by using fiber-optic probes. The system has been named DFLDA for laser diode fiber LDA and is especially suited for mobile applications, for example, in trains, airplanes, or automobiles. Optimization considerations of fiber-optic probes are put forward and several probe examples are described in detail. Measurement results from three typical applications are given to illustrate the use of the DFLDA. Finally, a number of future configurations of the DFLDA concept are discussed.

  18. Bypass diode for a solar cell

    Science.gov (United States)

    Rim, Seung Bum [Palo Alto, CA; Kim, Taeseok [San Jose, CA; Smith, David D [Campbell, CA; Cousins, Peter J [Menlo Park, CA

    2012-03-13

    Bypass diodes for solar cells are described. In one embodiment, a bypass diode for a solar cell includes a substrate of the solar cell. A first conductive region is disposed above the substrate, the first conductive region of a first conductivity type. A second conductive region is disposed on the first conductive region, the second conductive region of a second conductivity type opposite the first conductivity type.

  19. Phase-change radiative thermal diode

    OpenAIRE

    Ben-Abdallah, Philippe; Biehs, Svend-Age

    2013-01-01

    A thermal diode transports heat mainly in one preferential direction rather than in the opposite direction. This behavior is generally due to the non-linear dependence of certain physical properties with respect to the temperature. Here we introduce a radiative thermal diode which rectifies heat transport thanks to the phase transitions of materials. Rectification coefficients greater than 70% and up to 90% are shown, even for small temperature differences. This result could have important ap...

  20. Effect of different diode laser wavelengths on root dentin decontamination infected with Enterococcus faecalis.

    Science.gov (United States)

    Borges, Caroline Cristina; Estrela, Carlos; Lopes, Fabiane Carneiro; Palma-Dibb, Regina Guenka; Pecora, Jesus Djalma; De Araújo Estrela, Cyntia Rodrigues; Sousa-Neto, Manoel Damião de

    2017-11-01

    The objective of this study was to evaluate the antibacterial effect and the ultrastructural alterations of diode laser with different wavelengths (808nm and 970nm) and its association with irrigating solutions (2.5% sodium hypochlorite and 2% chlorhexidine) in root dentin contaminated by a five days biofilm. Thirteen uniradicular teeth were sectioned into 100 dentin intraradicular blocks. Initially, the blocks were immersed for 5min in 17% EDTA and washed with distilled water for 5min, then samples were sterilized for 30min at 120°C. The dentin samples were inoculated with 0.1mL of E. faecalis suspension in 5mL BHI (Brain Heart Infusion) and incubated at 37°C for 5days. After contamination, the specimens were distributed into ten groups (n=10) according to surface treatment: GI - 5mL NaOCl 2.5%, GII - 5mL NaOCl 2.5%+808nm diode (0.1W for 20s), GIII - 5mL NaOCl 2.5%+970nm diode (0.5W for 4s), GIV - 808nm diode (0.1W for 20s), GV - 970nm diode (0.5W for 4s), GVI - CHX 2%, GVII - CHX 2%+808nm diode (0.1W for 20s), GVIII - CHX 2%+970nm diode (0.5W for 4s), GIX - positive control and GX - negative control. Bacterial growth was analyzed by turbidity and optical density of the growth medium by spectrophotometry (nm). Then, the specimens were processed for analysis ultrastructural changes of the dentin surface by SEM. The data was subject to the One-way ANOVA test. GI (77.5±12.1), GII (72.5±12.2), GIII (68.7±8.7), GV (68.3±8.7), GVI (62.0±5.5) and GVII (67.5±3.3) were statistically similar and statistically different from GIV (58.8±25.0), GVIII (59.2±4.0) and control groups (pdiode laser; erosion of the intertubular dentin in blocks submitted to 808nm diode laser irradiation; and an increased erosion of the intertubular dentin when 2.5% NaOCl was associated to the different wavelengths lasers. All the therapeutic protocols were able to reduce the bacterial contingent in dentin blocks, and the association of diode laser and solutions did not significantly improve

  1. Micro-integrated extended cavity diode lasers for precision potassium spectroscopy in space.

    Science.gov (United States)

    Luvsandamdin, Erdenetsetseg; Kürbis, Christian; Schiemangk, Max; Sahm, Alexander; Wicht, Andreas; Peters, Achim; Erbert, Götz; Tränkle, Günther

    2014-04-07

    We present a micro-integrated, extended cavity diode laser module for space-based experiments on potassium Bose-Einstein condensates and atom interferometry. The module emits at the wavelength of the potassium D2-line at 766.7 nm and provides 27.5 GHz of continuous tunability. It features sub-100 kHz short term (100 μs) emission linewidth. To qualify the extended cavity diode laser module for quantum optics experiments in space, vibration tests (8.1 g(RMS) and 21.4 g(RMS)) and mechanical shock tests (1500 g) were carried out. No degradation of the electro-optical performance was observed.

  2. Modified Single Photo-diode (MSPD) Detection Technique for SAC-OCDMA System

    Science.gov (United States)

    Abdulqader, Sarah G.; Fadhil, Hilal A.; Aljunid, S. A.

    2015-03-01

    In this paper, a new detection technique called modified single photo-diode (MSPD) detection for SAC-OCDMA system is proposed. The proposed system based on the single photo-diode (SPD) detection technique. The new detection technique is proposed to overcome the limitation of phase-induced intensity noise (PIIN) in SPD detection technique. However, the proposed detection is based on an optical hard limiter (OHL) followed by a SPD and a low-pass filter (LPF) in order to suppress the phase intensity noise (PIIN) at the receiver side. The results show that the MSPD detection based on OHL has a good performance even when the transmission distance is long, which is different from the case of SPD detection technique. Therefore, the MSPD detection technique is shown to be effective to improve the bit error rate (BER<10-9) and to suppress the noise in the practical optical fiber network.

  3. Tunable high-power narrow-spectrum external-cavity diode laser based on tapered amplifier at 668 nm

    DEFF Research Database (Denmark)

    Chi, Mingjun; Erbert, G.; Sumpf, B.

    2010-01-01

    A 668 nm tunable high-power narrow-spectrum diode laser system based on a tapered semiconductor optical amplifier in external cavity is demonstrated. The laser system is tunable from 659 to 675 nm. As high as 1.38 W output power is obtained at 668.35 nm. The emission spectral bandwidth is less than...

  4. A p-silicon nanowire/n-ZnO thin film heterojunction diode prepared by thermal evaporation

    International Nuclear Information System (INIS)

    Hazra, Purnima; Jit, S.

    2014-01-01

    This paper represents the electrical and optical characteristics of a SiNW/ZnO heterojunction diode and subsequent studies on the photodetection properties of the diode in the ultraviolet (UV) wavelength region. In this work, silicon nanowire arrays were prepared on p-type (100)-oriented Si substrate by an electroless metal deposition and etching method with the help of ultrasonication. After that, catalyst-free deposition of zinc oxide (ZnO) nanowires on a silicon nanowire (SiNW) array substrate was done by utilizing a simple and cost-effective thermal evaporation technique without using a buffer layer. The SEM and XRD techniques are used to show the quality of the as-grown ZnO nanowire film. The junction properties of the diode are evaluated by measuring current—voltage and capacitance—voltage characteristics. The diode has a well-defined rectifying behavior with a rectification ratio of 190 at ±2 V, turn-on voltage of 0.5 V, and barrier height is 0.727 eV at room temperature under dark conditions. The photodetection parameters of the diode are investigated in the bias voltage range of ±2 V. The diode shows responsivity of 0.8 A/W at a bias voltage of 2 V under UV illumination (wavelength = 365 nm). The characteristics of the device indicate that it can be used for UV detection applications in nano-optoelectronic and photonic devices. (semiconductor devices)

  5. Enhanced light extraction of organic light-emitting diodes using recessed anodes

    International Nuclear Information System (INIS)

    Hsu, C.M.; Zeng, Y.X.; Lin, B.T.; Lin, W.M.; Wu, W.T.

    2014-01-01

    Recessed indium tin oxide films were prepared to serve as anodes for enhancing light extraction efficiency of organic light-emitting diodes (OLEDs). The power efficiency of OLEDs with the proposed films was enhanced by up to 28%. This improvement can be attributed to enhanced light extraction due to the wall effect and the bottom scattering effect of the recesses. The power efficiency increased with recess depth but was limited by the accompanying high electrical resistivity and large optical loss.

  6. Stable injection locking of diode lasers through a phase-modulated double phase-conjugate mirror

    Energy Technology Data Exchange (ETDEWEB)

    Iida, K.; Tan, X.; Shimura, T.; Kuroda, K. [Institute of Industrial Science, University of Tokyo, 7-22-1 Roppongi, Minato-ku, Tokyo 106 (Japan)

    1997-04-01

    The stable injection locking of 0.8-{mu}m diode lasers with a double phase-conjugate mirror (DPCM) was achieved. Phase modulation by piezoelectric transducers allowed us to keep two input beams of the DPCM mutually incoherent during locking. We preserved the high performance of the DPCM and retained stable locking for more than an hour. {copyright} 1997 Optical Society of America

  7. The waffle: a new photovoltaic diode geometry having high efficiency and backside contacts

    DEFF Research Database (Denmark)

    Leistiko, Otto

    1994-01-01

    By employing anisotropic etching techniques and advanced device processing it is possible to micromachine new types of mechanical, electronic, and optical devices of silicon, which have unique properties. In this paper the characteristics of a new type of photovoltaic diode fabricated employing...... resistance (mohms). The measured efficiencies at AM 1.5 lie between 12 to 15% with short circuit currents of 25-30 mA/cm2, and open circuit voltages of 0.58-0.6 V...

  8. Development of diode-pumped medical solid-state lasers

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Cheol Jung; Kim, Min Suk

    2000-09-01

    Two thirds of human body consists of water and the absorption of laser by water is an important factor in medical laser treatment. Er medical lasers have been used in the dermatology, ophthalmology and dental treatments due to its highest absorption by water. However, 2.9 um Er laser can not be transmitted through an optical fiber. On the other hand, Tm laser can be transmitted through an fiber and also has very high absorption by water. Therefore, Tm lasers are used in ophthalmology and heart treatment wherein the fiber delivery is very important for the treatment. Until now, mainly lamp-pumped solid-state lasers have been used in medical treatments, but the lamp-pumped solid-state lasers are being replaced with the diode-pumped solid-state lasers because the diode-pumped solid-state lasers are more compact and much easier to maintain. Following this trend, end-pumped Er and side-pumped Tm lasers have been developed and the output power of 1 W was obtained for Er and Tm respectively.

  9. Spectroscopic amplifier for pin diode; Amplificador espectroscopico para diodo Pin

    Energy Technology Data Exchange (ETDEWEB)

    Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R., E-mail: bebe.luna_s@hotmail.com [Universidad Autonoma de Zacatecas, Unidad Academica de Estudios Nucleares, Cipres No. 10, Fracc. La Penuela, 98068 Zacatecas (Mexico)

    2014-10-15

    The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

  10. Development of diode-pumped medical solid-state lasers

    International Nuclear Information System (INIS)

    Kim, Cheol Jung; Kim, Min Suk

    2000-09-01

    Two thirds of human body consists of water and the absorption of laser by water is an important factor in medical laser treatment. Er medical lasers have been used in the dermatology, ophthalmology and dental treatments due to its highest absorption by water. However, 2.9 um Er laser can not be transmitted through an optical fiber. On the other hand, Tm laser can be transmitted through an fiber and also has very high absorption by water. Therefore, Tm lasers are used in ophthalmology and heart treatment wherein the fiber delivery is very important for the treatment. Until now, mainly lamp-pumped solid-state lasers have been used in medical treatments, but the lamp-pumped solid-state lasers are being replaced with the diode-pumped solid-state lasers because the diode-pumped solid-state lasers are more compact and much easier to maintain. Following this trend, end-pumped Er and side-pumped Tm lasers have been developed and the output power of 1 W was obtained for Er and Tm respectively

  11. A pulsated weak-resonant-cavity laser diode with transient wavelength scanning and tracking for injection-locked RZ transmission.

    Science.gov (United States)

    Lin, Gong-Ru; Chi, Yu-Chieh; Liao, Yu-Sheng; Kuo, Hao-Chung; Liao, Zhi-Wang; Wang, Hai-Lin; Lin, Gong-Cheng

    2012-06-18

    By spectrally slicing a single longitudinal-mode from a master weak-resonant-cavity Fabry-Perot laser diode with transient wavelength scanning and tracking functions, the broadened self-injection-locking of a slave weak-resonant-cavity Fabry-Perot laser diode is demonstrated to achieve bi-directional transmission in a 200-GHz array-waveguide-grating channelized dense-wavelength-division-multiplexing passive optical network system. Both the down- and up-stream slave weak-resonant-cavity Fabry-Perot laser diodes are non-return-to-zero modulated below threshold and coherently injection-locked to deliver the pulsed carrier for 25-km bi-directional 2.5 Gbits/s return-to-zero transmission. The master weak-resonant-cavity Fabry-Perot laser diode is gain-switched at near threshold condition and delivers an optical coherent pulse-train with its mode linewidth broadened from 0.2 to 0.8 nm by transient wavelength scanning, which facilitates the broadband injection-locking of the slave weak-resonant-cavity Fabry-Perot laser diodes with a threshold current reducing by 10 mA. Such a transient wavelength scanning induced spectral broadening greatly releases the limitation on wavelength injection-locking range required for the slave weak-resonant-cavity Fabry-Perot laser diode. The theoretical modeling and numerical simulation on the wavelength scanning and tracking effects of the master and slave weak-resonant-cavity Fabry-Perot laser diodes are performed. The receiving power sensitivity for back-to-back transmission at bit-error-rate transmission is less than 2 dB for all 16 channels.

  12. 700 W blue fiber-coupled diode-laser emitting at 450 nm

    Science.gov (United States)

    Balck, A.; Baumann, M.; Malchus, J.; Chacko, R. V.; Marfels, S.; Witte, U.; Dinakaran, D.; Ocylok, S.; Weinbach, M.; Bachert, C.; Kösters, A.; Krause, V.; König, H.; Lell, A.; Stojetz, B.; Löffler, A.; Strauss, U.

    2018-02-01

    A high-power blue laser source was long-awaited for processing materials with low absorption in the near infrared (NIR) spectral range like copper or gold. Due to the huge progress of GaN-based semiconductors, the performance of blue diode-lasers has made a major step forward recently. With the availability of unprecedented power levels at cw-operating blue diode-lasers emitting at 450 nm, it was possible to set up a high-power diode-laser in the blue spectral range to address these conventional laser applications and probably beyond that to establish completely new utilizations for lasers. Within the scope of the research project "BlauLas", funded within the German photonic initiative "EFFILAS" [8] by the German Federal Ministry of Education and Research (BMBF), Laserline in cooperation with OSRAM aims to realize a cw fiber-coupled diode-laser exceeding 1 kW blue laser power. In this paper the conceptual design and experimental results of a 700 W blue fiber-coupled diode-laser are presented. Initially a close look had to be taken on the mounting techniques of the semiconductors to serve the requirements of the GaN laser diodes. Early samples were used for extensive long term tests to investigate degradation processes. With first functional laser-modules we set up fiber-coupled laser-systems for further testing. Besides adaption of well-known optical concepts a main task within the development of the laser system was the selection and examination of suitable materials and assembling in order to minimize degradation and reach adequate lifetimes. We realized R&D blue lasersystems with lifetimes above 5,000 h, which enable first application experiments on processing of various materials as well as experiments on conversion to white-light.

  13. Sub-100 fs high average power directly blue-diode-laser-pumped Ti:sapphire oscillator

    Science.gov (United States)

    Rohrbacher, Andreas; Markovic, Vesna; Pallmann, Wolfgang; Resan, Bojan

    2016-03-01

    Ti:sapphire oscillators are a proven technology to generate sub-100 fs (even sub-10 fs) pulses in the near infrared and are widely used in many high impact scientific fields. However, the need for a bulky, expensive and complex pump source, typically a frequency-doubled multi-watt neodymium or optically pumped semiconductor laser, represents the main obstacle to more widespread use. The recent development of blue diodes emitting over 1 W has opened up the possibility of directly diode-laser-pumped Ti:sapphire oscillators. Beside the lower cost and footprint, a direct diode pumping provides better reliability, higher efficiency and better pointing stability to name a few. The challenges that it poses are lower absorption of Ti:sapphire at available diode wavelengths and lower brightness compared to typical green pump lasers. For practical applications such as bio-medicine and nano-structuring, output powers in excess of 100 mW and sub-100 fs pulses are required. In this paper, we demonstrate a high average power directly blue-diode-laser-pumped Ti:sapphire oscillator without active cooling. The SESAM modelocking ensures reliable self-starting and robust operation. We will present two configurations emitting 460 mW in 82 fs pulses and 350 mW in 65 fs pulses, both operating at 92 MHz. The maximum obtained pulse energy reaches 5 nJ. A double-sided pumping scheme with two high power blue diode lasers was used for the output power scaling. The cavity design and the experimental results will be discussed in more details.

  14. Performance of the cold powered diodes and diode leads in the main magnets of the LHC

    CERN Document Server

    Willering, G P; Bajko, M; Bednarek, M; Bottura, L; Charifoulline, Z; Dahlerup-Petersen, K; Dib, G; D'Angelo, G; Gharib, A; Grand-Clement, L; Izquierdo Bermudez, S; Prin, H; Roger, V; Rowan, S; Savary, F; Tock, J-Ph; Verweij, A

    2015-01-01

    During quench tests in 2011 variations in resistance of an order of magnitude were found in the diode by-pass circuit of the main LHC magnets. An investigation campaign was started to understand the source, the occurrence and the impact of the high resistances. Many tests were performed offline in the SM18 test facility with a focus on the contact resistance of the diode to heat sink contact and the diode wafer temperature. In 2014 the performance of the diodes and diode leads of the main dipole bypass systems in the LHC was assessed during a high current qualification test. In the test a current cycle similar to a magnet circuit discharge from 11 kA with a time constant of 100 s was performed. Resistances of up to 600 μΩ have been found in the diode leads at intermediate current, but in general the high resistances decrease at higher current levels and no sign of overheating of diodes has been seen and the bypass circuit passed the test. In this report the performance of the diodes and in particular the co...

  15. Optical and thermal design of light emitting diodes omnidirectional bulb.

    Science.gov (United States)

    Ye, Zhi Ting; Kuo, Hao-Chung; Chen, Cheng-Huan

    2015-10-01

    The penetration of LED light bulbs into the lighting market is growing quickly in recent years due to significant increase of LED efficiency and reduction of cost. One major issue to be improved is the overall light bulb efficiency, which can fulfill "Energy Star for Lamps" while keeping sufficiently high efficiency. The efficiency issue results mainly from the high directionality of the LED sources and the corresponding solutions to make the emission more diverse. In this paper, a diffusion white reflection sheet (DWRS) with an array of holes is proposed as a high efficiency solution for modulating a light emission profile with SMD type LED source. The hole size is adjusted with fixed hole pitch to both maximize the efficiency and meet the omnidirectional specification. In addition, the concept of thermal plastic insertion molding metal is proposed for thermal management without fins for cooling. The prototype demonstrates the efficiency (Ef.) of 87.6% and LED pad temperature of 85°C, which shows the feasibility as a total solution for high efficiency LED omnidirectional bulbs.

  16. Holographic Optical Element-Based Laser Diode Source, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — NASA is seeking improved methods of rapid prototyping, which are best achieved by using directed metal deposition (DMD). Current DMD systems consume a great deal of...

  17. Integrated diode circuits for greater than 1 THz

    Science.gov (United States)

    Schoenthal, Gerhard Siegbert

    The terahertz frequency band, spanning from roughly 100 GHz to 10 THz, forms the transition from electronics to photonics. This band is often referred to as the "terahertz technology gap" because it lacks typical microwave and optical components. The deficit of terahertz devices makes it difficult to conduct important scientific measurements that are exclusive to this band in fields such as radio astronomy and chemical spectroscopy. In addition, a number of scientific, military and commercial applications will become more practical when a suitable terahertz technology is developed. UVa's Applied Electrophysics Laboratory has extended non-linear microwave diode technology into the terahertz region. Initial success was achieved with whisker-contacted diodes and then discrete planar Schottky diodes soldered onto quartz circuits. Work at UVa and the Jet Propulsion Laboratory succeeded in integrating this diode technology onto low dielectric substrates, thereby producing more practical components with greater yield and improved performance. However, the development of circuit integration technologies for greater than 1 THz and the development of broadly tunable sources of terahertz power remain as major research goals. Meeting these critical needs is the primary motivation for this research. To achieve this goal and demonstrate a useful prototype for one of our sponsors, this research project has focused on the development of a Sideband Generator at 1.6 THz. This component allows use of a fixed narrow band source as a tunable power source for terahertz spectroscopy and compact range radar. To prove the new fabrication and circuit technologies, initial devices were fabricated and tested at 200 and 600 GHz. These circuits included non-ohmic cathodes, air-bridged fingers, oxideless anode formation, and improved quartz integration processes. The excellent performance of these components validated these new concepts. The prototype process was then further optimized to

  18. Quantum key distribution with an entangled light emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Dzurnak, B.; Stevenson, R. M.; Nilsson, J.; Dynes, J. F.; Yuan, Z. L.; Skiba-Szymanska, J.; Shields, A. J. [Toshiba Research Europe Limited, 208 Science Park, Milton Road, Cambridge CB4 0GZ (United Kingdom); Farrer, I.; Ritchie, D. A. [Cavendish Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

    2015-12-28

    Measurements performed on entangled photon pairs shared between two parties can allow unique quantum cryptographic keys to be formed, creating secure links between users. An advantage of using such entangled photon links is that they can be adapted to propagate entanglement to end users of quantum networks with only untrusted nodes. However, demonstrations of quantum key distribution with entangled photons have so far relied on sources optically excited with lasers. Here, we realize a quantum cryptography system based on an electrically driven entangled-light-emitting diode. Measurement bases are passively chosen and we show formation of an error-free quantum key. Our measurements also simultaneously reveal Bell's parameter for the detected light, which exceeds the threshold for quantum entanglement.

  19. Demonstration of a diode-pumped metastable Ar laser.

    Science.gov (United States)

    Han, Jiande; Glebov, Leonid; Venus, George; Heaven, Michael C

    2013-12-15

    Pulsed lasing from optically pumped rare gas metastable atoms (Ne, Ar, Kr, and Xe) has been demonstrated previously. The laser relies on a three-level scheme, which involves the (n+1)p[5/2](3) and (n+1)p[1/2](1) states from the np(5)(n+1)p electronic configuration and the metastable (n+1)s[3/2](2) level of the np(5)(n+1)s configuration (Racah notation). Population inversions were achieved using relaxation from ((n+1)p[5/2](3) to (n+1)p[1/2](1) induced by collisions with helium or argon at pressures near 1 atm. Pulsed lasing was easily achieved using the high instantaneous pump intensities provided by a pulsed optical parametric oscillator excitation laser. In the present study we examine the potential for the development of a continuous wave (CW) optically pumped Ar laser. We report lasing of the 4p[1/2](1)→4s[3/2](2) (912.547 nm) transition following CW diode laser excitation of the 4p[5/2](3)←4s[3/2](2) line (811.754 nm). A pulsed discharge was used to generate Ar 4s[3/2](2), and the time-resolved lasing kinetics provide insights concerning the radiative and collisional relaxation processes.

  20. Investigation of high-power diode-end-pumped Tm:YLF laser in slab geometry.

    Science.gov (United States)

    Shen, Yingjie; Duan, Xiaoming; Yuan, Jinhe; Dai, Tongyu; Yao, Baoquan; Wang, Yuezhu

    2015-03-10

    Comparative investigations of high-power diode-end-pumped Tm:YLF laser with a-cut and c-cut slab crystals were demonstrated. A maximum output power of 87.5 W of 1907.8 nm Tm:YLF laser with two slab crystals was achieved, corresponding to a slope efficiency of 35.9% and an optical-to-optical efficiency of 32.1% with respect to the pump power. The c-cut slab Tm:YLF laser operated at 1907.8 nm with a beam quality factor of M2∼1.79 at the output power level of 71.0 W.

  1. Irreversible Thermodynamic Bound for the Efficiency of Light-Emitting Diodes

    Science.gov (United States)

    Xue, Jin; Li, Zheng; Ram, Rajeev J.

    2017-07-01

    A thermodynamic model for light-emitting diodes (LEDs) is developed by considering energy and entropy flows in the system. Thermodynamic constraints have previously been considered separately for the reversible process of electroluminescence in LEDs and for light extraction and collimation in other optical systems. By considering both processes in the LED model, an irreversible upper bound for the conversion of electrical energy to optical energy is derived and shown to be higher than unity, but tighter and more realistic than the reversible case. We also model a LED as an endoreversible heat engine where the carrier-transport processes can be directly connected to the elements of a thermodynamic cycle.

  2. Cavity-enhanced radiative emission rate in a single-photon-emitting diode operating at 0.5 GHz

    International Nuclear Information System (INIS)

    Ellis, David J P; Bennett, Anthony J; Dewhurst, Samuel J; Shields, Andrew J; Nicoll, Christine A; Ritchie, David A

    2008-01-01

    We report the observation of a Purcell enhancement in the radiative decay rate of a single quantum dot, embedded in a microcavity light-emitting-diode structure. Lateral confinement of the optical mode was achieved using an annulus of low-refractive-index aluminium oxide, formed by wet oxidation. The same layer acts as a current aperture, reducing the active area of the device without impeding the electrical properties of the p-i-n diode. This allowed single photon electroluminescence to be demonstrated at repetition rates up to 0.5 GHz

  3. Gate-tunable carbon nanotube–MoS2 heterojunction p-n diode

    Science.gov (United States)

    Jariwala, Deep; Sangwan, Vinod K.; Wu, Chung-Chiang; Prabhumirashi, Pradyumna L.; Geier, Michael L.; Marks, Tobin J.; Lauhon, Lincoln J.; Hersam, Mark C.

    2013-01-01

    The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 104. This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 μs. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics. PMID:24145425

  4. Stabilized diode seed laser for flight and space-based remote lidar sensing applications

    Science.gov (United States)

    McNeil, Shirley; Pandit, Pushkar; Battle, Philip; Rudd, Joe; Hovis, Floyd

    2017-08-01

    AdvR, through support of the NASA SBIR program, has developed fiber-based components and sub-systems that are routinely used on NASA's airborne missions, and is now developing an environmentally hardened, diode-based, locked wavelength, seed laser for future space-based high spectral resolution lidar applications. The seed laser source utilizes a fiber-coupled diode laser, a fiber-coupled, calibrated iodine reference module to provide an absolute wavelength reference, and an integrated, dual-element, nonlinear optical waveguide component for second harmonic generation, spectral formatting and wavelength locking. The diode laser operates over a range close to 1064.5 nm, provides for stabilization of the seed to the desired iodine transition and allows for a highly-efficient, fully-integrated seed source that is well-suited for use in airborne and space-based environments. A summary of component level environmental testing and spectral purity measurements with a seeded Nd:YAG laser will be presented. A direct-diode, wavelength-locked seed laser will reduce the overall size weight and power (SWaP) requirements of the laser transmitter, thus directly addressing the need for developing compact, efficient, lidar component technologies for use in airborne and space-based environments.

  5. Spectroscopic observations of ion line-emission from a magnetically insulated ion diode

    International Nuclear Information System (INIS)

    Maron, Y.; Peng, H.S.; Rondeau, G.D.; Hammer, D.A.

    1984-01-01

    Excited ions, produced in the surface-flashover plasma in a magnetically insulated diode, spontaneously emit light from the anode plasma region as well as (if the life time of the excited level is at least a few ns) from the diode acceleration gap. The emission lines of the ions traversing the gap are shifted from their natural wavelength because of the Stark effect due to the diode electric field. If the light is viewed transverse to the acceleration direction, the line width will be mostly determined by Doppler broadening due to ion transverse velocities. The authors use the OMNI II diode (up to 500 kV, 25 kA, 80 ns) with an insulating B field of ≅12 kG and an A-K gap of ≅7mm. The light emission from the entire 6.5 x 12 cm area in front of the anode is viewed parallel to the applied B field. A spectral resolution of 0.5 A is obtained by dispersing the light using a spectrometer followed by 6 optical fibers attached to PM-tubes. Each channel output is calibrated in situ. The spatial resolution across the gap could be made as small as 0.3 mm and the temporal resolution was varied between a few to a few tens of ns. The line spectral profile is obtained at a single discharge for a given distance from the anode surface

  6. Pulse propagation in a two-pass optical amplifier with arbitrary laser beams overlap

    Directory of Open Access Journals (Sweden)

    AH Farahbod

    2011-09-01

    Full Text Available An analytical model for two-pass optical amplifier with arbitrary beams overlap has been developed which generalized the classical theory of Frantz-Nodvik for single pass amplifier. The effect of counterpropagating beams on gain and output energy fluence included in the model. Moreover, the appropriate limiting relations for two special cases of weak input signal and saturation state of the amplifier gain have been derived. The results indicate that for complete beams overlap, the gain and output energy have the least values. The model predictions are consistent with experimental observations and exact analytical model for two-pass amplifier when beam propagation paths are coincided.

  7. Optical Co-Incidence Gate | Srinivasulu | African Journal of Science ...

    African Journals Online (AJOL)

    The paper explains Optical co-incidence gate, realized using Unijunction transistors (UJT), Light emitting diodes (LED) and Photo-resistors (LDR), which works on 1.8Vdc instead of 3Vdc. The power dissipation of the designed gate is only 3 mW. This optical gate finds application in the field of Mechatronics, Instrumentation ...

  8. Application of optical logic gates | Srinivasulu | Zede Journal

    African Journals Online (AJOL)

    This paper proposes optical NOT. AND, and NOR gates using unijunction transistor (UJT), light emitting diode (LED), and light dependent resistor (LDR). Efforts are made to extend the development of these gates using LDR, LED, and UJT to work at 1.8V instead of 3V. These optical gates find their application in the field of ...

  9. Fiber-optic laser gyro with easily introduced phase-difference bias.

    Science.gov (United States)

    Hotate, K; Yoshida, Y; Higashiguchi, M; Niwa, N

    1981-12-15

    An optical system for easy introduction of phase-difference bias to optimize the sensitivity of the fiber-optic laser gyro is proposed. The theory of using a laser diode has been considered, and the rotation detection experiment has been performed. The experimental setup consists of a 300-m long single-mode optical fiber, individual optical components, and a laser diode stabilized by a thermal controller and an optical isolator. Short-time resolution of the rotation rate better than 0.87 mrad/sec has been achieved with good linearity.

  10. Stirling-Cycle Cooling For Tunable Diode Laser

    Science.gov (United States)

    Durso, Santo S.; May, Randy D.; Tuchscherer, Matthew A.; Webster, Christopher R.

    1991-01-01

    Miniature Stirling-cycle cooler effective in continously cooling PbSnTe tunable diode laser to stable operating temperature near 80 K. Simplifies laboratory diode-laser spectroscopy and instruments for use aboard aircraft and balloons.

  11. Phase-sensitive detection of optical resonances by using an acousto-optic modulator in the Raman - Nath diffraction mode

    International Nuclear Information System (INIS)

    Baryshev, V N; Domnin, Yu S; Kopylov, L N

    2007-01-01

    A new method for frequency control of an external cavity diode laser without direct modulation of the injection current is proposed. The Pound - Drever optical heterodyne technique or the method of frequency control by frequency-modulated sidebands, in which an acousto-optic modulator operating in the Raman - Nath diffraction mode is used as an external phase modulator, can be employed to obtain error signals upon automatic frequency locking of the diode laser to the saturated absorption resonances within the D 2 line of cesium atoms or to the optical cavity resonances. (control of laser radiation parameters)

  12. Diode-side-pumped Alexandrite slab lasers.

    Science.gov (United States)

    Damzen, M J; Thomas, G M; Minassian, A

    2017-05-15

    We present the investigation of diode-side-pumping of Alexandrite slab lasers in a range of designs using linear cavity and grazing-incidence bounce cavity configurations. An Alexandrite slab laser cavity with double-pass side pumping produces 23.4 mJ free-running energy at 100 Hz rate with slope efficiency ~40% with respect to absorbed pump energy. In a slab laser with single-bounce geometry output power of 12.2 W is produced, and in a double-bounce configuration 6.5 W multimode and 4.5 W output in TEM 00 mode is produced. These first results of slab laser and amplifier designs in this paper highlight some of the potential strategies for power and energy scaling of Alexandrite using diode-side-pumped Alexandrite slab architectures with future availability of higher power red diode pumping.

  13. Laser scanning laser diode photoacoustic microscopy system.

    Science.gov (United States)

    Erfanzadeh, Mohsen; Kumavor, Patrick D; Zhu, Quing

    2018-03-01

    The development of low-cost and fast photoacoustic microscopy systems enhances the clinical applicability of photoacoustic imaging systems. To this end, we present a laser scanning laser diode-based photoacoustic microscopy system. In this system, a 905 nm, 325 W maximum output peak power pulsed laser diode with 50 ns pulsewidth is utilized as the light source. A combination of aspheric and cylindrical lenses is used for collimation of the laser diode beam. Two galvanometer scanning mirrors steer the beam across a focusing aspheric lens. The lateral resolution of the system was measured to be ∼21 μm using edge spread function estimation. No averaging was performed during data acquisition. The imaging speed is ∼370 A-lines per second. Photoacoustic microscopy images of human hairs, ex vivo mouse ear, and ex vivo porcine ovary are presented to demonstrate the feasibility and potentials of the proposed system.

  14. High efficiency and broadband acoustic diodes

    Science.gov (United States)

    Fu, Congyi; Wang, Bohan; Zhao, Tianfei; Chen, C. Q.

    2018-01-01

    Energy transmission efficiency and working bandwidth are the two major factors limiting the application of current acoustic diodes (ADs). This letter presents a design of high efficiency and broadband acoustic diodes composed of a nonlinear frequency converter and a linear wave filter. The converter consists of two masses connected by a bilinear spring with asymmetric tension and compression stiffness. The wave filter is a linear mass-spring lattice (sonic crystal). Both numerical simulation and experiment show that the energy transmission efficiency of the acoustic diode can be improved by as much as two orders of magnitude, reaching about 61%. Moreover, the primary working band width of the AD is about two times of the cut-off frequency of the sonic crystal filter. The cut-off frequency dependent working band of the AD implies that the developed AD can be scaled up or down from macro-scale to micro- and nano-scale.

  15. Self-magnetically insulated ion diode

    International Nuclear Information System (INIS)

    VanDevender, J.; Quintenz, J.; Leeper, R.; Johnson, D.; Crow, J.

    1981-01-01

    Light ion diodes for producing 1--100 TW ion beams are required for inertial confinement fusion. The theory, numerical simulations, and experiments on a self-magnetically insulated ion diode are presented. The treatment is from the point of view of a self-magnetically insulated transmission line with an ion loss current and differs from the usual treatment of the pinched electron beam diode. The simulations show that the ratio V/IZ 0 =0.25 in such a structure with voltage V, local total current I, and local vacuum wave impedance Z 0 . The ion current density is enhanced by a factor of approximately 2 over the simple space-charge limited value. The simulation results are verified in an experiment. An analytical theory is then presented for scaling the results to produce a focused beam of protons with a power of up to 10 13 W

  16. Thermal diode made by nematic liquid crystal

    Energy Technology Data Exchange (ETDEWEB)

    Melo, Djair, E-mail: djfmelo@gmail.com [Instituto de Física, Universidade Federal de Alagoas, Av. Lourival Melo Mota, s/n, 57072-900 Maceió, AL (Brazil); Fernandes, Ivna [Instituto de Física, Universidade Federal de Alagoas, Av. Lourival Melo Mota, s/n, 57072-900 Maceió, AL (Brazil); Moraes, Fernando [Departamento de Física, CCEN, Universidade Federal da Paraíba, Caixa Postal 5008, 58051-900, João Pessoa, PB (Brazil); Departamento de Física, Universidade Federal Rural de Pernambuco, 52171-900 Recife, PE (Brazil); Fumeron, Sébastien [Institut Jean Lamour, Université de Lorraine, BP 239, Boulevard des Aiguillettes, 54506 Vandoeuvre les Nancy (France); Pereira, Erms [Escola Politécnica de Pernambuco, Universidade de Pernambuco, Rua Benfíca, 455, Madalena, 50720-001 Recife, PE (Brazil)

    2016-09-07

    This work investigates how a thermal diode can be designed from a nematic liquid crystal confined inside a cylindrical capillary. In the case of homeotropic anchoring, a defect structure called escaped radial disclination arises. The asymmetry of such structure causes thermal rectification rates up to 3.5% at room temperature, comparable to thermal diodes made from carbon nanotubes. Sensitivity of the system with respect to the heat power supply, the geometry of the capillary tube and the molecular anchoring angle is also discussed. - Highlights: • An escaped radial disclination as a thermal diode made by a nematic liquid crystal. • Rectifying effects comparable to those caused by carbon and boron nitride nanotubes. • Thermal rectification increasing with radius and decreasing with height of the tube. • Asymmetric BCs cause rectification from the spatial asymmetry produced by the escape. • Symmetric BCs provide rectifications smaller than those yields by asymmetric BCs.

  17. Compact 35μm fiber coupled diode laser module based on dense wavelength division multiplexing of NBA mini-bars

    Science.gov (United States)

    Witte, U.; Traub, M.; Di Meo, A.; Hamann, M.; Rubel, D.; Hengesbach, S.; Hoffmann, D.

    2016-03-01

    We present a compact, modular and cross talk free approach for dense wavelength division multiplexing of high power diode lasers based on ultra-steep dielectric filters. The mini bars consist of 5 narrow stripe broad area emitters with a beam parameter product in the range of 2 mm mrad and a wavelength spacing of 2.5 nm between 2 adjacent emitters. Experimental results for fiber coupling (35 μm core diameter, NA < 0.2) of internally and externally stabilized diode lasers are presented. Optical losses are analyzed and alternative optical designs to overcome the current limitations of the setup are discussed.

  18. Diode laser based light sources for biomedical applications

    DEFF Research Database (Denmark)

    Müller, André; Marschall, Sebastian; Jensen, Ole Bjarlin

    2013-01-01

    Diode lasers are by far the most efficient lasers currently available. With the ever-continuing improvement in diode laser technology, this type of laser has become increasingly attractive for a wide range of biomedical applications. Compared to the characteristics of competing laser systems, diode...... imaging. This review provides an overview of the latest development of diode laser technology and systems and their use within selected biomedical applications....

  19. Blue laser diode (LD) and light emitting diode (LED) applications

    International Nuclear Information System (INIS)

    Bergh, Arpad A.

    2004-01-01

    The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography. As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc. Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity. Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care. (copyright 2004 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. Laser-diode pumped Nd:YAG lasers; Laser diode reiki Nd:YAG lasear

    Energy Technology Data Exchange (ETDEWEB)

    Yuasa, H.; Akiyama, Y.; Nakayama, M. [Toshiba Corp., Tokyo (Japan)

    2000-04-01

    Laser-diode pumped Nd:YAG lasers are expected to be applied to laser processing fields such as welding, cutting, drilling, and marking due to their potential for high efficiency and compactness. We are designing and developing laser-diode pumped Nd:YAG lasers using numerical analysis simulation techniques such as ray tracing and thermal analysis. We have succeeded in achieving a laser power of more than 3 kW with 20% efficiency, which is the best ever obtained. In addition, we have developed a laser-diode pumped green laser by second harmonic generation, for precision machining on silicon wafers. (author)

  1. Near-Infrared Wireless Optical Communication with Particulates In-Suspension over the Underwater Channel

    KAUST Repository

    Lee, It Ee

    2017-05-08

    We demonstrate a gigabit near-infrared-based underwater wireless optical communication link using an 808-nm laser diode to mitigate the particle scattering effect in turbid medium. An improvement in the error performance is observed with increasing concentrations.

  2. Experimental study of self-oscillation frequency in a semiconductor laser with optical injection

    International Nuclear Information System (INIS)

    MartInez-Zerega, B E; Jaimes-Reategui, R; Pisarchik, A N; Liu, J M

    2005-01-01

    Period-one and period-two oscillations in a diode laser subject to optical injection are experimentally investigated. The changes in the modulation frequency are studied as a function of the detuning frequency and the injection signal strength

  3. A Simplified Laser and Optics System for Laser-Cooled RB Fountain Frequency Standards

    National Research Council Canada - National Science Library

    Kunz, P. D; Heavner, T. P; Jefferts, S. R

    2007-01-01

    ...) atomic fountain frequency standard. This system uses DFB (Distributed Feedback) diode lasers and a frequency offset-locking scheme to generate the optical frequencies needed for laser-cooling, launching, post-cooling, and detection of Rb atoms...

  4. Equilibrium double layers in extended Pierce diodes

    International Nuclear Information System (INIS)

    Ciubotariu-Jassy, C.I.

    1992-01-01

    The extended Pierce diode is similar to the standard (or classical) Pierce diode, but has passive circuit elements in place of the short circuit between the electrodes. This device is important as an approximation to real bounded plasma systems. It consists of two parallel plane electrodes (an emitter located at x=0 and a collector located at x=l) and a collisionless cold electron beam travelling between them. The electrons are neutralized by a background of comoving massive ions. This situation is analysed in this paper and new equilibrium double layer (DL) plasma structures are obtained. (author) 6 refs., 3 figs

  5. Diode and method of making the same

    Energy Technology Data Exchange (ETDEWEB)

    Dickerson, Jeramy Ray; Wierer, Jr., Jonathan; Kaplar, Robert; Allerman, Andrew A.

    2018-03-13

    A diode includes a second semiconductor layer over a first semiconductor layer. The diode further includes a third semiconductor layer over the second semiconductor layer, where the third semiconductor layer includes a first semiconductor element over the second semiconductor layer. The third semiconductor layer additionally includes a second semiconductor element over the second semiconductor layer, wherein the second semiconductor element surrounds the first semiconductor element. Further, the third semiconductor layer includes a third semiconductor element over the second semiconductor element. Furthermore, a hole concentration of the second semiconductor element is less than a hole concentration of the first semiconductor element.

  6. Linear variable voltage diode capacitor and adaptive matching networks

    NARCIS (Netherlands)

    Larson, L.E.; De Vreede, L.C.N.

    2006-01-01

    An integrated variable voltage diode capacitor topology applied to a circuit providing a variable voltage load for controlling variable capacitance. The topology includes a first pair of anti-series varactor diodes, wherein the diode power-law exponent n for the first pair of anti-series varactor

  7. Cryogenic thermometry with a common diode: type BAS16

    NARCIS (Netherlands)

    Rijpma, A.P.; ter Brake, Hermanus J.M.

    2006-01-01

    Cryogenic test experiments often require a large number of temperatures to be monitored. In order to reduce cost, we investigated the feasibility of low-cost common diodes. We chose the Philips BAS16 diode in a type SOT23 package. By means of Stycast 2850FT, these diodes were glued into alumina

  8. High power diode lasers converted to the visible

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Hansen, Anders Kragh; Andersen, Peter E.

    2017-01-01

    High power diode lasers have in recent years become available in many wavelength regions. However, some spectral regions are not well covered. In particular, the visible spectral range is lacking high power diode lasers with good spatial quality. In this paper, we highlight some of our recent...... results in nonlinear frequency conversion of high power near infrared diode lasers to the visible spectral region....

  9. Diode laser operating on an atomic transition limited by an isotope ⁸⁷Rb Faraday filter at 780 nm.

    Science.gov (United States)

    Tao, Zhiming; Hong, Yelong; Luo, Bin; Chen, Jingbiao; Guo, Hong

    2015-09-15

    We demonstrate an extended cavity Faraday laser system using an antireflection-coated laser diode as the gain medium and the isotope (87)Rb Faraday anomalous dispersion optical filter (FADOF) as the frequency selective device. Using this method, the laser wavelength works stably at the highest transmission peak of the isotope (87)Rb FADOF over the laser diode current from 55 to 140 mA and the temperature from 15°C to 35°C. Neither the current nor the temperature of the laser diode has significant influence on the output frequency. Compared with previous extended cavity laser systems operating at frequencies irrelevant to spectacular atomic transition lines, the laser system realized here provides a stable laser source with the frequency operating on atomic transitions for many practical applications.

  10. Optical vibration measurement of mechatronics devices

    Science.gov (United States)

    Yanabe, Shigeo

    1993-09-01

    An optical vibration measuring system which enables to detect both linear and angular displacement of 25 nm and 5 prad was developed. The system is mainly composed of a He-Ne laser, a displacement detecting photo-diode and lenses, and has linear and angular displacement magnification mechanism using two different principles of optical lever. The system was applied to measure vibrational characteristics of magnetic head slider of hard disk drives and to measure stator teeth driving velocities of ultrasonic motor.

  11. Fiber Optic Tactical Local Network (FOTLAN)

    Science.gov (United States)

    Bergman, L. A.; Hartmayer, R.; Wu, W. H.; Cassell, P.; Edgar, G.; Lambert, J.; Mancini, R.; Jeng, J.; Pardo, C.

    1991-01-01

    A 100 Mbit/s FDDI (fiber distributed data interface) network interface unit is described that supports real-time data, voice and video. Its high-speed interrupt-driven hardware architecture efficiently manages stream and packet data transfer to the FDDI network. Other enhancements include modular single-mode laser-diode fiber optic links to maximize node spacing, optic bypass switches for increased fault tolerance, and a hardware performance monitor to gather real-time network diagnostics.

  12. R&D Towards Cryogenic Optical Links

    Energy Technology Data Exchange (ETDEWEB)

    Christiansen, M.; Radeka, V.; Galea, R.; Gong, D.; Hou, S.; Lissauer, D.; Liu, C.; Liu, T.; Rehak, P.; Sondericker, J.; Stroynowski, R.; Su, D.-S., Takacs, P.; Takai, H.; Techerniatine, V.; Teng, P.-K.; Thorn, C.; Xiang, A.C.; Ye, J.; Yu, B.

    2010-12-15

    A number of critical active and passive components of optical links have been tested at 77 K or lower temperatures, demonstrating potential development of optical links operating inside the liquid argon time projection chamber (LArTPC) detector cryostat. A ring oscillator, individual MOSFETs, and a high speed 16:1 serializer fabricated in a commercial 0.25-{micro}m silicon-on-sapphire CMOS technology continued to function from room temperature to 4.2 K, 15 K, and 77 K respectively. Three types of laser diodes lase from room temperature to 77 K. Optical fibers and optical connectors exhibited minute attenuation changes from room temperature to 77 K.

  13. R and D towards cryogenic optical links

    Energy Technology Data Exchange (ETDEWEB)

    Christiansen, M [Department of Electrical Engineering, Southern Methodist University, Dallas TX 75275 (United States); Galea, R [Department of Physics, Columbia University, New York, NY 10027 (United States); Gong, D; Liu, C; Liu, T; Sondericker, J; Stroynowski, R; Xiang, A C; Ye, J [Department of Physics, Southern Methodist University, Dallas TX 75275 (United States); Hou, S; Su, D-S; Teng, P-K [Institute of Physics, Academia Sinica, Nangang 11529, Taipei, Taiwan (China); Lissauer, D; Takai, H; Tcherniatine, V; Thorn, C [Physics Department, Brookhaven National Laboratory, Upton, NY 11973 (United States); Radeka, V; Rehak, P; Takacs, P; Yu, B, E-mail: kentl@smu.edu [Instrumentation Division, Brookhaven National Laboratory, Upton, NY 11973 (United States)

    2010-12-15

    A number of critical active and passive components of optical links have been tested at 77 K or lower temperatures, demonstrating potential development of optical links operating inside the liquid argon time projection chamber (LArTPC) detector cryostat. A ring oscillator, individual MOSFETs, and a high speed 16:1 serializer fabricated in a commercial 0.25-{mu}m silicon-on-sapphire CMOS technology continued to function from room temperature to 4.2 K, 15 K, and 77 K respectively. Three types of laser diodes lase from room temperature to 77 K. Optical fibers and optical connectors exhibited minute attenuation changes from room temperature to 77 K.

  14. R&D towards cryogenic optical links

    Science.gov (United States)

    Christiansen, M.; Galea, R.; Gong, D.; Hou, S.; Lissauer, D.; Liu, C.; Liu, T.; Radeka, V.; Rehak, P.; Sondericker, J.; Stroynowski, R.; Su, D.-S.; Takacs, P.; Takai, H.; Tcherniatine, V.; Teng, P.-K.; Thorn, C.; Xiang, A. C.; Ye, J.; Yu, B.

    2010-12-01

    A number of critical active and passive components of optical links have been tested at 77 K or lower temperatures, demonstrating potential development of optical links operating inside the liquid argon time projection chamber (LArTPC) detector cryostat. A ring oscillator, individual MOSFETs, and a high speed 16:1 serializer fabricated in a commercial 0.25-μm silicon-on-sapphire CMOS technology continued to function from room temperature to 4.2 K, 15 K, and 77 K respectively. Three types of laser diodes lase from room temperature to 77 K. Optical fibers and optical connectors exhibited minute attenuation changes from room temperature to 77 K.

  15. R and D Towards Cryogenic Optical Links

    International Nuclear Information System (INIS)

    Christiansen, M.; Radeka, V.; Galea, R.; Gong, D.; Hou, S.; Lissauer, D.; Liu, C.; Liu, T.; Rehak, P.; Sondericker, J.; Stroynowski, R.; Su, D.-S.; Takacs, P.; Takai, H.; Techerniatine, V.; Teng, P.-K.; Thorn, C.; Xiang, A.C.; Ye, J.; Yu, B.

    2010-01-01

    A number of critical active and passive components of optical links have been tested at 77 K or lower temperatures, demonstrating potential development of optical links operating inside the liquid argon time projection chamber (LArTPC) detector cryostat. A ring oscillator, individual MOSFETs, and a high speed 16:1 serializer fabricated in a commercial 0.25-(micro)m silicon-on-sapphire CMOS technology continued to function from room temperature to 4.2 K, 15 K, and 77 K respectively. Three types of laser diodes lase from room temperature to 77 K. Optical fibers and optical connectors exhibited minute attenuation changes from room temperature to 77 K.

  16. Irradiation effects of swift heavy ions on gallium arsenide, silicon and silicon diodes

    International Nuclear Information System (INIS)

    Bhoraskar, V.N.

    2001-01-01

    The irradiation effects of high energy lithium, boron, oxygen and silicon ions on crystalline silicon, gallium arsenide, porous silicon and silicon diodes were investigated. The ion energy and fluence were varied over the ranges 30 to 100 MeV and 10 11 to 10 14 ions/cm 2 respectively. Semiconductor samples were characterized with the x-ray fluorescence, photoluminescence, thermally stimulated exo-electron emission and optical reflectivity techniques. The life-time of minority carriers in crystalline silicon was measured with a pulsed electron beam and the lithium depth distribution in GaAs was measured with the neutron depth profiling technique. The diodes were characterized through electrical measurements. The results of optical reflectivity, life-time of minority carriers and photoluminescence show that swift heavy ions induce defects in the surface region of crystalline silicon. In the ion-irradiated GaAs, migration of silicon, oxygen and lithium atoms from the buried region towards the surface was observed, with orders of magnitude enhancement in the diffusion coefficients. Enhancement in the photoluminescence intensity was observed in the GaAs and porous silicon samples that, were irradiated with silicon ions. The trade-off between the turn-off time and the voltage, drop in diodes irradiated with different swift heavy ions was also studied. (author)

  17. Annealing dependence on flexible p-CuGaO2/n-ZnO heterojunction diode deposited by RF sputtering method

    Directory of Open Access Journals (Sweden)

    Lam Mui Li

    2017-01-01

    Full Text Available In this work, p-CuGaO2/n-ZnO heterojunction diodes were deposited by RF powered sputtering method on polyethylene terephthalate (PETP, PET substrates. Structural, morphology, optical and electrical properties of CuGaO2/ZnO heterojunction was investigated as a function of annealing duration. The structural properties show the ZnO films (002 peak were stronger at the range of 34° while CuGaO2 (015 peak is not visible at 44°. The surface morphology revealed that RMS roughness become smoother as the annealing duration increase to 30 minutes and become rougher as the annealing duration is increased to 60 minutes. The optical properties of CuGaO2/ZnO heterojunction diode at 30 minutes exhibit approximately 75% optical transmittance in the invisible region. The diodes exhibited a rectifying characteristic and the maximum forward current was observed for the diode annealed for 30 minutes. The diodes show an ideality factor range from 43.69 to 71.29 and turn on voltage between 0.75 V and 1.05 V.

  18. Tunnel Diode Discriminator with Fixed Dead Time

    DEFF Research Database (Denmark)

    Diamond, J. M.

    1965-01-01

    A solid state discriminator for the range 0.4 to 10 V is described. Tunnel diodes are used for the discriminator element and in a special fixed dead time circuit. An analysis of temperature stability is presented. The regulated power supplies are described, including a special negative resistance...

  19. Light-Emitting Diodes: A Hidden Treasure

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2014-01-01

    LEDs, or light-emitting diodes, are cheap, easy to purchase, and thus commonly used in physics instruction as indicators of electric current or as sources of light (Fig. 1). In our opinion LEDs represent a unique piece of equipment that can be used to collect experimental evidence, and construct and test new ideas in almost every unit of a general…

  20. Light-Emitting Diodes: Learning New Physics

    Science.gov (United States)

    Planinšic, Gorazd; Etkina, Eugenia

    2015-01-01

    This is the third paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide the readers with the description of experiments and pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper, published…

  1. Proto-I switching and diode studies

    International Nuclear Information System (INIS)

    Prestwich, K.R.; Miller, P.A.; McDaniel, D.H.; Poukey, J.W.; Widner, M.M.; Goldstein, S.A.

    1975-01-01

    Proto-I is a 3 MV, 800 kA, 24 ns electron beam accelerator that is under development at Sandia Laboratories. It represents an initial effort to develop a scalable technology that is applicable to accelerators for electron beam driven, inertial confinement fusion studies. Energy is supplied to each of the two diodes from six oil-dielectric Blumlein transmission lines (PFL) operating in parallel. A Marx generator charges three intermediate storage, water-dielectric capacitors which subsequently transfer the stored energy to the PFL. The discharge of the PFL is initiated by the simultaneous closure of 12 triggered oil-dielectric rail switches. Data will be presented on the operation of these multichannel switches. The two diodes have a common anode. Cathode diameters can be varied from 10 to 60 cm. Results of initial diode experiments and comparisons with theory are discussed. Plasma filled diode experiments are also reported, indicating pinch collapse velocities in excess of 10 9 cm/s

  2. A CW Gunn diode bistable switching element.

    Science.gov (United States)

    Hurtado, M.; Rosenbaum, F. J.

    1972-01-01

    Experiments with a current-controlled bistable switching element using a CW Gunn diode are reported. Switching rates of the order of 10 MHz have been obtained. Switching is initiated by current pulses of short duration (5-10 ns). Rise times of the order of several nanoseconds could be obtained.

  3. High-Performance Single Nanowire Tunnel Diodes

    DEFF Research Database (Denmark)

    Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

    2010-01-01

    We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27...

  4. All epitaxial silicon diode heavy ion detector

    International Nuclear Information System (INIS)

    Gruhn, C.R.; Goldstone, P.D.; Jarmie, N.

    1976-01-01

    An all epitaxial silicon diode (ESD) heavy ion detector has been designed, fabricated, and tested. The active area of the detector is 5 cm 2 and has a total thickness of 50 μ. The response of the detector has been studied with fission fragments, alpha particles, oxygen ions, and sulfur ions. A number of advantages in terms of both fabrication and performance are discussed

  5. Entangled Light Emission From a Diode

    International Nuclear Information System (INIS)

    Stevenson, R. M.; Shields, A. J.; Salter, C. L.; Farrer, I.; Nicoll, C. A.; Ritchie, D. A.

    2011-01-01

    Electrically-driven entangled photon generation is demonstrated for the first time using a single semiconductor quantum dot embedded in a light emitting diode structure. The entanglement fidelity is shown to be of sufficient quality for applications such as quantum key distribution.

  6. Outcome of Diode Laser Cyclophotocoagulation in Neovascular ...

    African Journals Online (AJOL)

    Aim: To find out the short-term outcome of ciliary ablation with diode laser contact cyclophotocoagulation in Nigerians with neovascular glaucoma. Methods: The study is a retrospective, non-comparative, interventional case series. Demographic data, ocular and systemic history were obtained. Clinical examination included ...

  7. Flexible substrate compatible solution processed P-N heterojunction diodes with indium-gallium-zinc oxide and copper oxide

    Energy Technology Data Exchange (ETDEWEB)

    Choudhary, Ishan; Deepak, E-mail: saboo@iitk.ac.in

    2017-04-15

    Highlights: • Both n and p-type semiconductors are solution processed. • Temperature compatibility with flexible substrates such as polyimide. • Compatibility of p-type film (CuO) on n-type film (IZO). • Diode with rectification ratio of 10{sup 4} and operating voltage <1.5 V. • Construction of band alignment using XPS. - Abstract: Printed electronics on flexible substrates requires low temperature and solution processed active inks. With n-type indium-gallium-zinc oxide (IGZO) based electronics maturing for thin film transistor (TFT), we here demonstrate its heterojunction diode with p-copper oxide, prepared by sol-gel method and processed at temperatures compatible with polyimide substrates. The phase obtained for copper oxide is CuO. When coated on n-type oxide, it is prone to develop morphological features, which are minimized by annealing treatment. Diodes of p-CuO films with IGZO are of poor quality due to its high resistivity while, conducting indium-zinc oxide (IZO) films yielded good diode with rectification ratio of 10{sup 4} and operating voltage <1.5 V. A detailed measurement at the interface by X-ray photoelectron spectroscopy and optical absorption ascertained the band alignment to be of staggered type. Consistently, the current in the diode is established to be due to electrons tunnelling from n-IZO to p-CuO.

  8. Simultaneous dual-functioning InGaN/GaN multiple-quantum-well diode for transferrable optoelectronics

    Science.gov (United States)

    Shi, Zheng; Yuan, Jialei; Zhang, Shuai; Liu, Yuhuai; Wang, Yongjin

    2017-10-01

    We propose a wafer-level procedure for the fabrication of 1.5-mm-diameter dual functioning InGaN/GaN multiple-quantum-well (MQW) diodes on a GaN-on-silicon platform for transferrable optoelectronics. Nitride semiconductor materials are grown on (111) silicon substrates with intermediate Al-composition step-graded buffer layers, and membrane-type MQW-diode architectures are obtained by a combination of silicon removal and III-nitride film backside thinning. Suspended MQW-diodes are directly transferred from silicon to foreign substrates such as metal, glass and polyethylene terephthalate by mechanically breaking the support beams. The transferred MQW-diodes display strong electroluminescence under current injection and photodetection under light irradiation. Interestingly, they demonstrate a simultaneous light-emitting light-detecting function, endowing the 1.5-mm-diameter MQW-diode with the capability of producing transferrable optoelectronics for adjustable displays, wearable optical sensors, multifunctional energy harvesting, flexible light communication and monolithic photonic circuit.

  9. Manufacture of axially insulated large-area diodes

    International Nuclear Information System (INIS)

    Ma Weiyi; Zhou Kungang; Wang Youtian; Zhang Dong; Shan Yusheng; Wang Naiyan

    1999-01-01

    The author describes the design and construction of the axially insulated large-area diodes used in the 'Heaven-1'. The four axially insulated large-area diodes are connected to the 10 ohm pulse transmission lines via the vacuum feed through tubes. The experimental results with the diodes are given. The diodes can steadily work at the voltage of 650 kV, and the diode current density is about 80 A per cm 2 with a pulse width of 220 ns. The electron beams with a total energy of 25 kJ are obtained

  10. The Pierce-diode approximation to the single-emitter plasma diode

    International Nuclear Information System (INIS)

    Ender, A. Ya.; Kuhn, S.; Kuznetsov, V. I.

    2006-01-01

    The possibility of modeling fast processes in the collisionless single-emitter plasma diode (Knudsen diode with surface ionization, KDSI) by means of the Pierce-diode is studied. The KDSI is of practical importance in that it is an almost exact model of thermionic energy converters (TICs) in the collisionless regime and can also be used to model low-density Q-machines. At high temperatures, the Knudsen TIC comes close to the efficiency of the Carnot cycle and hence is the most promising converter of thermal to electric energy. TICs can be applied as component parts in high-temperature electronics. It is shown that normalizations must be chosen appropriately in order to compare the plasma characteristics of the two models: the KDSI and the Pierce-diode. A linear eigenmode theory of the KDSI is developed. For both nonlinear time-independent states and linear eigenmodes without electron reflection, excellent agreement is found between the analytical potential distributions for the Pierce-diode and the corresponding numerical ones for the KDSI. For the states with electron reflection, the agreement is satisfactory in a qualitative sense. A full classification of states of both diodes for the regimes with and without electron reflection is presented. The effect of the thermal spread in electron velocities on the potential distributions and the (ε,η) diagrams is analyzed. Generally speaking, the methodology developed is usefully applicable to a variety of systems in which the electrons have beam-like distributions

  11. Diode-laser-pump module with integrated signal ports for pumping amplifying fibers and method

    Science.gov (United States)

    Savage-Leuchs,; Matthias, P [Woodinville, WA

    2009-05-26

    Apparatus and method for collimating pump light of a first wavelength from laser diode(s) into a collimated beam within an enclosure having first and second optical ports, directing pump light from the collimated beam to the first port; and directing signal light inside the enclosure between the first and second port. The signal and pump wavelengths are different. The enclosure provides a pump block having a first port that emits pump light to a gain fiber outside the enclosure and that also passes signal light either into or out of the enclosure, and another port that passes signal light either out of or into the enclosure. Some embodiments use a dichroic mirror to direct pump light to the first port and direct signal light between the first and second ports. Some embodiments include a wavelength-conversion device to change the wavelength of at least some of the signal light.

  12. Construction and characterization of external cavity diode lasers for atomic physics.

    Science.gov (United States)

    Hardman, Kyle S; Bennetts, Shayne; Debs, John E; Kuhn, Carlos C N; McDonald, Gordon D; Robins, Nick

    2014-04-24

    Since their development in the late 1980s, cheap, reliable external cavity diode lasers (ECDLs) have replaced complex and expensive traditional dye and Titanium Sapphire lasers as the workhorse laser of atomic physics labs. Their versatility and prolific use throughout atomic physics in applications such as absorption spectroscopy and laser cooling makes it imperative for incoming students to gain a firm practical understanding of these lasers. This publication builds upon the seminal work by Wieman, updating components, and providing a video tutorial. The setup, frequency locking and performance characterization of an ECDL will be described. Discussion of component selection and proper mounting of both diodes and gratings, the factors affecting mode selection within the cavity, proper alignment for optimal external feedback, optics setup for coarse and fine frequency sensitive measurements, a brief overview of laser locking techniques, and laser linewidth measurements are included.

  13. Frequency chirped light at large detuning with an injection-locked diode laser.

    Science.gov (United States)

    Teng, K; Disla, M; Dellatto, J; Limani, A; Kaufman, B; Wright, M J

    2015-04-01

    We have developed a laser system to generate frequency-chirped light at rapid modulation speeds (∼100 MHz) with a large frequency offset. Light from an external cavity diode laser with its frequency locked to an atomic resonance is passed through a lithium niobate electro-optical phase modulator. The phase modulator is driven by a ∼6 GHz signal whose frequency is itself modulated with a RF MHz signal (<200 MHz). A second injection locked diode laser is used to filter out all of the light except the frequency-chirped ±1 order by more than 30 dB. Using this system, it is possible to generate a 1 GHz frequency chirp in 5 ns.

  14. Frequency chirped light at large detuning with an injection-locked diode laser

    Energy Technology Data Exchange (ETDEWEB)

    Teng, K.; Disla, M.; Dellatto, J.; Limani, A.; Kaufman, B.; Wright, M. J., E-mail: mwright@adelphi.edu [Physics Department, Adelphi University, 1 South Ave., Garden City, New York 11530 (United States)

    2015-04-15

    We have developed a laser system to generate frequency-chirped light at rapid modulation speeds (∼100 MHz) with a large frequency offset. Light from an external cavity diode laser with its frequency locked to an atomic resonance is passed through a lithium niobate electro-optical phase modulator. The phase modulator is driven by a ∼6 GHz signal whose frequency is itself modulated with a RF MHz signal (<200 MHz). A second injection locked diode laser is used to filter out all of the light except the frequency-chirped ±1 order by more than 30 dB. Using this system, it is possible to generate a 1 GHz frequency chirp in 5 ns.

  15. Frequency chirped light at large detuning with an injection-locked diode laser

    International Nuclear Information System (INIS)

    Teng, K.; Disla, M.; Dellatto, J.; Limani, A.; Kaufman, B.; Wright, M. J.

    2015-01-01

    We have developed a laser system to generate frequency-chirped light at rapid modulation speeds (∼100 MHz) with a large frequency offset. Light from an external cavity diode laser with its frequency locked to an atomic resonance is passed through a lithium niobate electro-optical phase modulator. The phase modulator is driven by a ∼6 GHz signal whose frequency is itself modulated with a RF MHz signal (<200 MHz). A second injection locked diode laser is used to filter out all of the light except the frequency-chirped ±1 order by more than 30 dB. Using this system, it is possible to generate a 1 GHz frequency chirp in 5 ns

  16. High passive-stability diode-laser design for use in atomic-physics experiments

    Science.gov (United States)

    Cook, Eryn C.; Martin, Paul J.; Brown-Heft, Tobias L.; Garman, Jeffrey C.; Steck, Daniel A.

    2012-04-01

    We present the design and performance characterization of an external-cavity diode-laser system optimized for high stability, low passive spectral linewidth, low cost, and ease of in-house assembly. The main cavity body is machined from a single aluminum block for robustness to temperature changes and mechanical vibrations, and features a stiff and light diffraction-grating arm to suppress low-frequency mechanical resonances. The cavity is vacuum sealed, and a custom-molded silicone external housing further isolates the system from acoustic noise and temperature fluctuations. Beam shaping, optical isolation, and fiber coupling are integrated, and the design is easily adapted to many commonly used wavelengths. Resonance data, passive-linewidth data, and passive stability characterization of the new design demonstrate that its performance exceeds published specifications for commercial precision diode-laser systems. The design is fully documented and freely available.

  17. Tunable terahertz wave generation through a bimodal laser diode and plasmonic photomixer.

    Science.gov (United States)

    Yang, S-H; Watts, R; Li, X; Wang, N; Cojocaru, V; O'Gorman, J; Barry, L P; Jarrahi, M

    2015-11-30

    We demonstrate a compact, robust, and stable terahertz source based on a novel two section digital distributed feedback laser diode and plasmonic photomixer. Terahertz wave generation is achieved through difference frequency generation by pumping the plasmonic photomixer with two output optical beams of the two section digital distributed feedback laser diode. The laser is designed to offer an adjustable terahertz frequency difference between the emitted wavelengths by varying the applied currents to the laser sections. The plasmonic photomixer is comprised of an ultrafast photoconductor with plasmonic contact electrodes integrated with a logarithmic spiral antenna. We demonstrate terahertz wave generation with 0.15-3 THz frequency tunability, 2 MHz linewidth, and less than 5 MHz frequency stability over 1 minute, at useful power levels for practical imaging and sensing applications.

  18. Nitride superluminescent diodes with broadened emission spectrum fabricated using laterally patterned substrate.

    Science.gov (United States)

    Kafar, A; Stanczyk, S; Sarzynski, M; Grzanka, S; Goss, J; Targowski, G; Nowakowska-Siwinska, A; Suski, T; Perlin, P

    2016-05-02

    We demonstrate InGaN/GaN superluminescent diodes with broadened emission spectra fabricated on surface-shaped bulk GaN (0001) substrates. The patterning changes the local vicinal angle linearly along the device waveguide, which results in an indium incorporation profile in InGaN quantum wells. The structure was investigated by microphotoluminescence mapping, showing a shift of central emission wavelength from 413 nm to 430 nm. Spectral full width at half maximum of processed superluminescent diodes is equal to 6.1 nm, while the reference chips show 3.4 nm. This approach may open the path for using nitride devices in applications requiring broad emission spectrum and high beam quality, such as optical coherence tomography.

  19. 980 nm high brightness external cavity broad area diode laser bar

    DEFF Research Database (Denmark)

    Vijayakumar, Deepak; Jensen, Ole Bjarlin; Thestrup Nielsen, Birgitte

    2009-01-01

    We demonstrate of-axis spectral beam combining applied to a 980 nm high power broad area diode laser bar. The experiments yielded 9 W of optical power at 30 A of operating current and the measured M2 values of the combined beam from 12 emitters were 1.9 and 6.4 for the fast and the slow axis......, respectively. The slow axis beam quality was 5-6 times better than the value obtained from a single emitter in free running mode. A high brightness of 79 MW/cm2-str was achieved using this configuration. To our knowledge, this is the highest brightness level ever achieved from a broad area diode laser bar....

  20. THERMAL LENSING MEASUREMENTS IN THE ANISOTROPIC LASER CRYSTALS UNDER DIODE PUMPING

    Directory of Open Access Journals (Sweden)

    P. A. Loiko

    2012-01-01

    Full Text Available An experimental setup was developed for thermal lensing measurements in the anisotropic diode-pumped laser crystals. The studied crystal is placed into the stable two-mirror laser cavity operating at the fundamental transversal mode. The output beam radius is measured with respect to the pump intensity for different meridional planes (all these planes contain the light propagation direction. These dependencies are fitted using the ABCD matrix method in order to obtain the sensitivity factors showing the change of the optical power of thermal lens due to variation of the pump intensity. The difference of the sensitivity factors for two mutually orthogonal principal meridional planes describes the thermal lens astigmatism degree. By means of this approach, thermal lensing was characterized in the diode-pumped monoclinic Np-cut Nd:KGd(WO42 laser crystal at the wavelength of 1.067 μm for light polarization E || Nm.