WorldWideScience

Sample records for single-pass diode optical

  1. Optical performance of multifocal soft contact lenses via a single-pass method.

    Science.gov (United States)

    Bakaraju, Ravi C; Ehrmann, Klaus; Falk, Darrin; Ho, Arthur; Papas, Eric

    2012-08-01

    A physical model eye capable of carrying soft contact lenses (CLs) was used as a platform to evaluate optical performance of several commercial multifocals (MFCLs) with high- and low-add powers and a single-vision control. Optical performance was evaluated at three pupil sizes, six target vergences, and five CL-correcting positions using a spatially filtered monochromatic (632.8 nm) light source. The various target vergences were achieved by using negative trial lenses. A photosensor in the retinal plane recorded the image point-spread that enabled the computation of visual Strehl ratios. The centration of CLs was monitored by an additional integrated en face camera. Hydration of the correcting lens was maintained using a humidity chamber and repeated instillations of rewetting saline drops. All the MFCLs reduced performance for distance but considerably improved performance along the range of distance to near target vergences, relative to the single-vision CL. Performance was dependent on add power, design, pupil, and centration of the correcting CLs. Proclear (D) design produced good performance for intermediate vision, whereas Proclear (N) design performed well at near vision (p 4 mm in diameter. Acuvue Oasys bifocal produced performance comparable with single-vision CL for most vergences. Direct measurement of single-pass images at the retinal plane of a physical model eye used in conjunction with various MFCLs is demonstrated. This method may have utility in evaluating the relative effectiveness of commercial and prototype designs.

  2. Non-linear optics for the final focus of the single-pass-collider

    International Nuclear Information System (INIS)

    Brown, K.L.; Spencer, J.E.

    1981-02-01

    The purpose of the final focus system (FFS) is to demagnify the beam envelope in the Collider arc lattice to a size suitable for beam collisions at the interaction region. The final spot size is determined by the beam emittance, the beta function β* at the IR, the momentum spread in the beam, and the quality of the FFS optics. In particular, if the focusing system is not chromatically corrected, the momentum dispersion in the beam can lead to a substantial degradation in the quality of the final focus. The objective is to design a FFS for 50 GeV/c within approx. 100 meters having an IR spot size sigma/sub xy/ of approximately 2 μm for a beam emittance of epsilon = 3 x 10 -10 m-rad and a momentum spread of delta = +-0.5%. This requires a β/sub x,y/ equal to or less than 1 cm. This report considers the problems encountered in the design of a final focus system that will reliably provide the desired beam size for collisions

  3. Highly efficient single-pass frequency doubling of a continuous-wave distributed feedback laser diode using a PPLN waveguide crystal at 488 nm.

    Science.gov (United States)

    Jechow, Andreas; Schedel, Marco; Stry, Sandra; Sacher, Joachim; Menzel, Ralf

    2007-10-15

    A continuous-wave distributed feedback diode laser emitting at 976 nm was frequency doubled by the use of a periodically poled lithium niobate waveguide crystal with a channel size of 3 microm x 5 microm and an interaction length of 10 mm. A laser to waveguide coupling efficiency of 75% could be achieved resulting in 304 mW of incident infrared light inside the waveguide. Blue laser light emission of 159 mW at 488 nm has been generated, which equals to a conversion efficiency of 52%. The resulting wall plug efficiency was 7.4%.

  4. Few-photon optical diode

    OpenAIRE

    Roy, Dibyendu

    2010-01-01

    We propose a novel scheme of realizing an optical diode at the few-photon level. The system consists of a one-dimensional waveguide coupled asymmetrically to a two-level system. The two or multi-photon transport in this system is strongly correlated. We derive exactly the single and two-photon current and show that the two-photon current is asymmetric for the asymmetric coupling. Thus the system serves as an optical diode which allows transmission of photons in one direction much more efficie...

  5. An all-silicon passive optical diode.

    Science.gov (United States)

    Fan, Li; Wang, Jian; Varghese, Leo T; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M; Qi, Minghao

    2012-01-27

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input power is higher than the forward input. The silicon optical diode is ultracompact and is compatible with current complementary metal-oxide semiconductor processing.

  6. Single Pass Albumin Dialysis in Hepatorenal Syndrome

    Directory of Open Access Journals (Sweden)

    Rahman Ebadur

    2008-01-01

    Full Text Available Hepatorenal syndrome (HRS is the most appalling complication of acute or chronic liver disease with 90% mortality rate. Single pass albumin dialysis (SPAD can be considered as a noble liver support technique in HRS. Here, we present a case of a young healthy patient who developed hyperacute fulminant liver failure that progressed to HRS. The patient was offered SPAD as a bridge to liver transplantation, however, it resulted in an excellent recovery.

  7. An All-Silicon Passive Optical Diode

    OpenAIRE

    Fan, Li; Wang, Jian; Varghese, Leo T.; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M.; Qi, Minghao

    2011-01-01

    A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input pow...

  8. Molecular diodes in optical rectennas

    Science.gov (United States)

    Duché, David; Palanchoke, Ujwol; Terracciano, Luigi; Dang, Florian-Xuan; Patrone, Lionel; Le Rouzo, Judikael; Balaban, Téodore Silviu; Alfonso, Claude; Charai, Ahmed; Margeat, Olivier; Ackermann, Jorg; Gourgon, Cécile; Simon, Jean-Jacques; Escoubas, Ludovic

    2016-09-01

    The photo conversion efficiencies of the 1st and 2nd generat ion photovoltaic solar cells are limited by the physical phenomena involved during the photo-conversion processes. An upper limit around 30% has been predicted for a monojunction silicon solar cell. In this work, we study 3rd generation solar cells named rectenna which could direct ly convert visible and infrared light into DC current. The rectenna technology is at odds with the actual photovoltaic technologies, since it is not based on the use of semi-conducting materials. We study a rectenna architecture consist ing of plasmonic nano-antennas associated with rectifying self assembled molecular diodes. We first opt imized the geometry of plasmonic nano-antennas using an FDTD method. The optimal antennas are then realized using a nano-imprint process and associated with self assembled molecular diodes in 11- ferrocenyl-undecanethiol. Finally, The I(V) characterist ics in darkness of the rectennas has been carried out using an STM. The molecular diodes exhibit averaged rect ification ratios of 5.

  9. Axioms for behavioural congruence of single-pass instruction sequences

    NARCIS (Netherlands)

    Bergstra, J.A.; Middelburg, C.A.

    2017-01-01

    In program algebra, an algebraic theory of single-pass instruction sequences, three congruences on instruction sequences are paid attention to: instruction sequence congruence, structural congruence, and behavioural congruence. Sound and complete axiom systems for the first two congruences were

  10. Highly efficient single-pass sum frequency generation by cascaded nonlinear crystals

    DEFF Research Database (Denmark)

    Hansen, Anders Kragh; Andersen, Peter E.; Jensen, Ole Bjarlin

    2015-01-01

    , despite differences in the phase relations of the involved fields. An unprecedented 5.5 W of continuous-wave diffraction-limited green light is generated from the single-pass sum frequency mixing of two diode lasers in two periodically poled nonlinear crystals (conversion efficiency 50%). The technique......The cascading of nonlinear crystals has been established as a simple method to greatly increase the conversion efficiency of single-pass second-harmonic generation compared to a single-crystal scheme. Here, we show for the first time that the technique can be extended to sum frequency generation...... is generally applicable and can be applied to any combination of fundamental wavelengths and nonlinear crystals....

  11. INVESTIGATION OF SINGLE-PASS/DOUBLE-PASS TECHNIQUES ON FRICTION STIR WELDING OF ALUMINIUM

    Directory of Open Access Journals (Sweden)

    N.A.A. Sathari

    2014-12-01

    Full Text Available The aim of this research is to study the effects of single-pass/ double-pass techniques on friction stir welding of aluminium. Two pieces of AA1100 with a thickness of 6.0 mm were friction stir welded using a CNC milling machine at rotational speeds of 1400 rpm, 1600 rpm and 1800 rpm respectively for single-pass and double-pass. Microstructure observations of the welded area were studied using an optical microscope. The specimens were tested by using a tensile test and Vickers hardness test to evaluate their mechanical properties. The results indicated that, at low rotational speed, defects such as ‘surface lack of fill’ and tunnels in the welded area contributed to a decrease in mechanical properties. Welded specimens using double-pass techniques show increasing values of tensile strength and hardness. From this investigation it is found that the best parameters of FSW welded aluminium AA1100 plate were those using double-pass techniques that produce mechanically sound joints with a hardness of 56.38 HV and 108 MPa strength at 1800 rpm compared to the single-pass technique. Friction stir welding, single-pass/ double-pass techniques, AA1100, microstructure, mechanical properties.

  12. Single-frequency blue light generation by single-pass sum-frequency generation in a coupled ring cavity tapered laser

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Petersen, Paul Michael

    2013-01-01

    A generic approach for generation of tunable single frequency light is presented. 340 mW of near diffraction limited, single-frequency, and tunable blue light around 459 nm is generated by sum-frequency generation (SFG) between two tunable tapered diode lasers. One diode laser is operated in a ring...... cavity and another tapered diode laser is single-passed through a nonlinear crystal which is contained in the coupled ring cavity. Using this method, the single-pass conversion efficiency is more than 25%. In contrast to SFG in an external cavity, the system is entirely self-stabilized with no electronic...

  13. Precision Spectroscopy, Diode Lasers, and Optical Frequency Measurement Technology

    Science.gov (United States)

    Hollberg, Leo (Editor); Fox, Richard (Editor); Waltman, Steve (Editor); Robinson, Hugh

    1998-01-01

    This compilation is a selected set of reprints from the Optical Frequency Measurement Group of the Time and Frequency Division of the National Institute of Standards and Technology, and consists of work published between 1987 and 1997. The two main programs represented here are (1) development of tunable diode-laser technology for scientific applications and precision measurements, and (2) research toward the goal of realizing optical-frequency measurements and synthesis. The papers are organized chronologically in five, somewhat arbitrarily chosen categories: Diode Laser Technology, Tunable Laser Systems, Laser Spectroscopy, Optical Synthesis and Extended Wavelength Coverage, and Multi-Photon Interactions and Optical Coherences.

  14. Forest Analysis by Single-Pass Millimeterwave SAR Tomography

    OpenAIRE

    Schmitt, Michael; Zhu, Xiao Xiang

    2016-01-01

    Recent investigations show that millimeterwave SAR tomography provides an interesting means for the analysis of forested areas, especially if single-pass systems are employed. Providing very high resolutions in the decimeter domain and highly coherent data also for slightly windy conditions, even individual trees can be considered. Besides, it has been shown that a certain amount of canopy penetration is possible in spite of the short wavelength.

  15. Fiber optic modification of a diode array spectrophotometer

    International Nuclear Information System (INIS)

    Van Hare, D.R.; Prather, W.S.

    1986-01-01

    Fiber optics were adapted to a Hewlett-Packard diode array spectrophotometer to permit the analysis of radioactive samples without risking contamination of the instrument. Instrument performance was not compromised by the fiber optics. The instrument is in routine use at the Savannah River Plant control laboratories

  16. Remote optically-tunable transimpedance amplifiers for quantum well diodes

    Energy Technology Data Exchange (ETDEWEB)

    Carraresi, L.; Landi, G.; Rocchi, S.; Vignoli, V

    1999-08-01

    In a previous paper we discussed the advantages in using linear optical transmission systems based on quantum well diodes in modern high energy physics experiments. In this paper, after a short summary of the quantum well theory, the electronics section of the above optical transmission system is presented. In particular the basic configuration of a transimpedance amplifier and the arrangement of an optical remote control system for the amplifier gain and bandwidth tuning are discussed.

  17. Remote optically-tunable transimpedance amplifiers for quantum well diodes

    International Nuclear Information System (INIS)

    Carraresi, L.; Landi, G.; Rocchi, S.; Vignoli, V.

    1999-01-01

    In a previous paper we discussed the advantages in using linear optical transmission systems based on quantum well diodes in modern high energy physics experiments. In this paper, after a short summary of the quantum well theory, the electronics section of the above optical transmission system is presented. In particular the basic configuration of a transimpedance amplifier and the arrangement of an optical remote control system for the amplifier gain and bandwidth tuning are discussed

  18. Online analysis by a fiber-optic diode array spectrophotometer

    International Nuclear Information System (INIS)

    Van Hare, D.R.; Prather, W.S.; O'Rourke, P.E.

    1987-01-01

    An online photometric analyzer has been developed which can make remote measurements over the 350 to 900 nm region at distances of up to 100 feet. The analyzer consists of a commercially available diode array spectrophotometer interfaced to a fiber-optic multiplexer to allow online monitoring of up to ten locations sequentially. The development of the fiber-optic interface is discussed and data from several online applications are presented to demonstrate the capabilities of the measurement system

  19. Milestone experiments for single pass UV/X-ray FELs

    International Nuclear Information System (INIS)

    Ben-Zvi, I.

    1994-01-01

    In the past decade, significant advances have been made in the theory and technology of high brightness electron beams and single pass FELS. These developments facilitate the construction of practical UV and X-ray FELs and has prompted proposals to the DOE for the construction of such facilities. There are several important experiments to be performed before committing to the construction of dedicated user facilities. Two experiments are under construction in the IR, the UCLA Self Amplified Spontaneous Emission experiment and the BNL laser seeded Harmonic Generation experiment. A multi-institution collaboration is being organized about a 210 MeV electron linac available at BNL and the 10 meter tong NISUS wiggler. This experiment will be done in the UV and will test various experimental aspects of electron beam dynamics, FEL exponential regime with gain guiding, start up from noise, seeding and harmonic generation. These experiments will advance the state of FEL research and lead towards future dedicated users' facilities

  20. Milestone experiments for single pass UV/X-ray FELs

    Science.gov (United States)

    Ben-Zvi, Ilan

    1995-04-01

    In the past decade, significant advances have been made in the theory and technology of high brightness electron beams and single pass FELs. These developments facilitate the construction of practical UV and X-ray FELs and has prompted proposals to the DOE for the construction of such facilities. There are several important experiments to be performed before committing to the construction of dedicated user facilities. Two experiments are under construction in the IR, the UCLA self-amplified spontaneous emission experiment and the BNL laser seeded harmonic generation experiment. A multi-institution collaboration is being organized about a 210 MeV electron linac available at BNL and the 10 m long NISUS wiggler. This experiment will be done in the UV and will test various experimental aspects of electron beam dynamics, FEL exponential regime with gain guiding, start-up from noise, seeding and harmonic generation. These experiments will advance the state of FEL research and lead towards future dedicated users' facilities.

  1. Single Pass Stripline Beam Position Monitor Design, Fabrication and Commissioning

    Directory of Open Access Journals (Sweden)

    McKinlay J.

    2012-10-01

    Full Text Available To monitor the position of the electron beam during transport from the Booster Synchrotron to the Storage Ring at the Australian Synchrotron, a stripline Beam Position Monitor (BPM has been designed, fabricated and installed in-house. The design was based on an existing stripline in the Booster and modified for the transfer line with a particular emphasis on ensuring the line impedance is properly matched to the detector system. The initial bench tests of a prototype stripline showed that the fabrication of the four individual striplines in the BPM was made precisely, each with a measured standing wave ratio (SWR of 1.8 at 500 MHz. Further optimization for impedance matching will be done for new stripline BPMs. The linearity and gain factor was measured with the detector system. The detector system that digitizes the signals is an Instrumentation Technologies Brilliance Single Pass [1]. The results show an error of 1 mm at an offset (from the electrical centre of 10 mm when a linear gain factor is assumed and an RMS noise of ~150 um that decreases to < 10 um with increasing signal intensity. The results were under our requirements for the transport line. The commissioning results of the stripline will also be presented showing a strong signal for an electron beam with an estimated integrated charge of ~50 nC with a position stability of 28 um (horizontal and 75 um (vertical.

  2. Single Pass Stripline Beam Position Monitor Design, Fabrication and Commissioning

    Science.gov (United States)

    Tan, Y.-R. E.; Wang, D.; Van Garderen, E.; McKinlay, J.

    2012-10-01

    To monitor the position of the electron beam during transport from the Booster Synchrotron to the Storage Ring at the Australian Synchrotron, a stripline Beam Position Monitor (BPM) has been designed, fabricated and installed in-house. The design was based on an existing stripline in the Booster and modified for the transfer line with a particular emphasis on ensuring the line impedance is properly matched to the detector system. The initial bench tests of a prototype stripline showed that the fabrication of the four individual striplines in the BPM was made precisely, each with a measured standing wave ratio (SWR) of 1.8 at 500 MHz. Further optimization for impedance matching will be done for new stripline BPMs. The linearity and gain factor was measured with the detector system. The detector system that digitizes the signals is an Instrumentation Technologies Brilliance Single Pass [1]. The results show an error of 1 mm at an offset (from the electrical centre) of 10 mm when a linear gain factor is assumed and an RMS noise of ~150 um that decreases to < 10 um with increasing signal intensity. The results were under our requirements for the transport line. The commissioning results of the stripline will also be presented showing a strong signal for an electron beam with an estimated integrated charge of ~50 nC with a position stability of 28 um (horizontal) and 75 um (vertical).

  3. Optical neuron by use of a laser diode with injection seeding and external optical feedback

    NARCIS (Netherlands)

    Mos, E.C.; Hoppenbrouwers, J.J.L.; Hill, M.T.; Blum, M.W.; Schleipen, J.J.H.B.; Waardt, de H.

    2000-01-01

    We present an all-optical neuron by use of a multimode laser diode that is subjected to external optical feedback and light injection. The shape of the threshold function, that is needed for neural operation, is controlled by adjusting the external feedback level for two longitudinal cavity modes of

  4. The Single Pass RF Driver: Final beam compression

    Energy Technology Data Exchange (ETDEWEB)

    Burke, Robert, E-mail: rjburke@fusionpowercorporation.com

    2014-01-01

    The Single Pass RF Driver (SPRFD) compacts the beam from the linac without storage rings by manipulations that take advantage of the multiplicity of isotopes (16), the preserved µbunch structure, and increased total linac current. Magnetic switches on a first set of delay lines rearrange the internal structure of the various isotopic beams. A second set of delay lines sets the relative timing of the 16 isotopic beam sections so they will telescope at the pellet, in one of multiple fusion chambers, e.g. 10. Shortening each isotopic beam section uses preservation of the µbunch structure up to the final ∼2 km drift before final focus. Just before the final drift, differential acceleration of the µbunches in each isotopic beam section (128 total) launches an axial collapse, referred to as the “Slick”. The µbunches interpenetrate as their centers of mass move toward each other and individual µbunches lengthen due to their momentum spread. In longitudinal phase space they slide over one another as they lengthen in time and slim down in instantaneous energy spread. The permissible amount of µbunch lengthening is set by the design pulse shape at the pellet, which varies for different groups of isotopes. In narrow bands of ranges according to the role for each isotope group in the pellet, the ranges extend from 1 to 10 g/cm{sup 2} to drive the cylinder barrel and thin hemispherical end caps, to heat the ∼0.5 g/cm{sup 2}ρR fast ignition zone, and to improve the quasi-sphericity of the compression of the fast ignition zones at the pellet's ends. Because the µbunch–µbunch momentum differences are correlated, time-ramped beamline transport elements close after the differential accelerator are used to correct the associated shifts of focal point. Beam neutralization is needed after the differential acceleration until adjacent bunches begin to overlap. Concurrent collapse of each isotope and telescoping of the 16 isotopes cause the current in each beamline

  5. The Single Pass RF Driver: Final beam compression

    International Nuclear Information System (INIS)

    Burke, Robert

    2014-01-01

    The Single Pass RF Driver (SPRFD) compacts the beam from the linac without storage rings by manipulations that take advantage of the multiplicity of isotopes (16), the preserved µbunch structure, and increased total linac current. Magnetic switches on a first set of delay lines rearrange the internal structure of the various isotopic beams. A second set of delay lines sets the relative timing of the 16 isotopic beam sections so they will telescope at the pellet, in one of multiple fusion chambers, e.g. 10. Shortening each isotopic beam section uses preservation of the µbunch structure up to the final ∼2 km drift before final focus. Just before the final drift, differential acceleration of the µbunches in each isotopic beam section (128 total) launches an axial collapse, referred to as the “Slick”. The µbunches interpenetrate as their centers of mass move toward each other and individual µbunches lengthen due to their momentum spread. In longitudinal phase space they slide over one another as they lengthen in time and slim down in instantaneous energy spread. The permissible amount of µbunch lengthening is set by the design pulse shape at the pellet, which varies for different groups of isotopes. In narrow bands of ranges according to the role for each isotope group in the pellet, the ranges extend from 1 to 10 g/cm 2 to drive the cylinder barrel and thin hemispherical end caps, to heat the ∼0.5 g/cm 2 ρR fast ignition zone, and to improve the quasi-sphericity of the compression of the fast ignition zones at the pellet's ends. Because the µbunch–µbunch momentum differences are correlated, time-ramped beamline transport elements close after the differential accelerator are used to correct the associated shifts of focal point. Beam neutralization is needed after the differential acceleration until adjacent bunches begin to overlap. Concurrent collapse of each isotope and telescoping of the 16 isotopes cause the current in each beamline to rise

  6. Electrical and optical response of a laser diode to transient ionizing radiation

    International Nuclear Information System (INIS)

    Baggio, J.; Brisset, C.; Sommer, J.L.; D'hose, C.; Lalande, P.; Leray, J.L.; Musseau, O.

    1996-01-01

    The authors have studied transient irradiation effects on the optical and electrical responses of a laser diode. The influence of dose rate, ranging from 10 9 to 10 12 rad(Si)/s, has been investigated through a complete experimental study. Dose rate vulnerability of the laser diode has been observed. Electrical and optical transient responses are determined by the dose rate, the diode structure, and its operating point

  7. Optical vortex generation from a diode-pumped alexandrite laser

    Science.gov (United States)

    Thomas, G. M.; Minassian, A.; Damzen, M. J.

    2018-04-01

    We present the demonstration of an optical vortex mode directly generated from a diode-pumped alexandrite slab laser, operating in the bounce geometry. This is the first demonstration of an optical vortex mode generated from an alexandrite laser or from any other vibronic laser. An output power of 2 W for a vortex mode with a ‘topological charge’ of 1 was achieved and the laser was made to oscillate with both left- and right-handed vorticity. The laser operated at two distinct wavelengths simultaneously, 755 and 759 nm, due to birefringent filtering in the alexandrite gain medium. The result offers the prospect of broadly wavelength tunable vortex generation directly from a laser.

  8. Developing a Methodology for Elaborating a Pulsed Optical Safety Area for High Power Laser Diodes

    National Research Council Canada - National Science Library

    Yankov, Plamen

    2006-01-01

    The laser diodes are efficient sources of optical radiation. The maximum optical peak power depends on the pulse duration of the driving current pulse - reducing the pulse duration the safety peak power is increased...

  9. QUANTITATIVE DETECTION OF ENVIRONMENTALLY IMPORTANT DYES USING DIODE LASER/FIBER-OPTIC RAMAN

    Science.gov (United States)

    A compact diode laser/fiber-optic Raman spectrometer is used for quantitative detection of environmentally important dyes. This system is based on diode laser excitation at 782 mm, fiber optic probe technology, an imaging spectrometer, and state-of-the-art scientific CCD camera. ...

  10. Optical signal inverter of erbium-doped yttrium aluminum garnet with red shift of laser diodes.

    Science.gov (United States)

    Maeda, Y

    1994-08-10

    An optical signal inverter was demonstrated in a simple structure that combined a laser diode with Er-doped YAG crystal. The optical signal inversion occurred at a response time of 7 ns and was caused by the decrease of transmission of Er:YAG against the red shift of the wavelength of the laser diode.

  11. Internal optical losses in very thin CW heterojunction laser diodes

    Science.gov (United States)

    Butler, J. K.; Kressel, H.; Ladany, I.

    1975-01-01

    Theoretical calculations are presented showing the relationship between the internal laser absorption and structural parameters appropriate for CW room-temperature lasers. These diodes have submicron-thick recombination regions, and very small spacings between the heat sink and the recombination region to minimize the thermal resistance. The optical loss is shown to be strongly dependent on the degree of radiation confinement to the active region. In particular, absorption in the surface GaAs layer providing the ohmic contact becomes very significant when the intermediate (AlGa)As layer is reduced below about 1 micron. It is further shown that excessive penetration into the GaAs regions gives rise to anomalies in the far-field radiation profiles in the direction perpendicular to the junction plane.

  12. Programmable current source for diode lasers stabilized optical fiber

    International Nuclear Information System (INIS)

    Gomez, J.; Camas, J.; Garcia, L.

    2012-01-01

    In this paper, we present the electronic design of a programmable stabilized current source. User can access to the source through a password, which, it has a database with the current and voltage operating points. This source was successfully used as current source in laser diode in optical fiber sensors. Variations in the laser current were carried out by a monitoring system and a control of the Direct Current (DC), which flowing through a How land source with amplifier. The laser current can be stabilized with an error percent of ± 1 μA from the threshold current (Ith) to its maximum operation current (Imax) in DC mode. The proposed design is reliable, cheap, and its output signal of stabilized current has high quality. (Author)

  13. Generation of coherent soft x-rays using a single-pass free-electron laser amplifier

    International Nuclear Information System (INIS)

    Wang, T.F.; Goldstein, J.C.; Newnam, B.E.; McVey, B.D.

    1988-01-01

    We consider a single-pass free-electron laser (FEL) amplifier, driven by an rf-linac followed by a damping ring for reduced emittance, for use in generating coherent light in the soft x-ray region. The dependence of the optical gain on electron-beam quality, studied with the three-dimensional FEL simulation code FELEX, is given and related to the expected power of self-amplified spontaneous emission. We discuss issues for the damping ring designed to achieve the required electron beam quality. The idea of a multipass regenerative amplifier is also presented

  14. Model for Estimation of Thermal History Produced by a Single Pass Underwater Wet Weld

    National Research Council Canada - National Science Library

    Dill, Jay

    1997-01-01

    Thermal history calculations for single pass underwater wet weldments were made by solving the appropriate beat transfer equations using the three-dimensional Crank-Nicholson finite difference method...

  15. Optical bistability in erbium-doped yttrium aluminum garnet crystal combined with a laser diode.

    Science.gov (United States)

    Maeda, Y

    1994-01-10

    Optical bistability was observed in a simple structure of an injection laser diode combined with an erbium-doped yttrium aluminum garnet crystal. Since a hysteresis characteristic exists in the relationship between the wavelength and the injection current of a laser diode, an optical memory function capable of holding the output status is confirmed. In addition, an optical signal inversion was caused by the decrease of transmission of the erbium-doped yttrium aluminum garnet crystal against the red shift (principally mode hopping) of the laser diode. It is suggested that the switching time of this phenomenon is the time necessary for a mode hopping by current injection.

  16. Optical phase dynamics in mutually coupled diode laser systems exhibiting power synchronization

    International Nuclear Information System (INIS)

    Pal, Vishwa; Ghosh, R; Prasad, Awadhesh

    2011-01-01

    We probe the physical mechanism behind the known phenomenon of power synchronization of two diode lasers that are mutually coupled via their delayed optical fields. In a diode laser, the amplitude and the phase of the optical field are coupled by the so-called linewidth enhancement factor, α. In this work, we explore the role of optical phases of the electric fields in amplitude (and hence power) synchronization through α in such mutually delay-coupled diode laser systems. Our numerical results show that the synchronization of optical phases drives the powers of lasers to synchronized death regimes. We also find that as α varies for different diode lasers, the system goes through a sequence of in-phase amplitude-death states. Within the windows between successive amplitude-death regions, the cross-correlation between the field amplitudes exhibits a universal power-law behaviour with respect to α.

  17. Internal optical losses in very thin cw heterojunction laser diodes

    International Nuclear Information System (INIS)

    Butler, J.K.; Kressel, H.; Ladany, I.

    1975-01-01

    Theoretical calculations are presented showing the relationship between the internal laser absorption and structural parameters appropriate for cw room-temperature lasers. These diodes have submicron-thick recombination regions, and very small spacings between the heat sink and the recombination region to minimize the thermal resistance. The optical loss is shown to be strongly dependent on the degree of radiation confinement to the active region. In particular, absorption in the surface GaAs layer providing the ohmic contact becomes very significant when the intermediate (AlGa)As layer is reduced below about 1 μm. It is further shown that excessive penetration into the GaAs regions gives rise to anomalies in the far-field radiation profiles in the direction perpendicular to the junction plane. Proper design of the internal structure of the laser avoids large increases of the threshold current density as well as large decreases in the external differential quantum efficiency from interaction with the contact layer. The design curves presented can be used to predict the gain required at threshold for a broad range of structural parameters of interest in low-threshold laser design

  18. Route to broadband chaos in a chaotic laser diode subject to optical injection.

    Science.gov (United States)

    Wang, An-Bang; Wang, Yun-Cai; Wang, Juan-Fen

    2009-04-15

    We experimentally and numerically demonstrate a route to bandwidth-enhanced chaos that is induced by an additional optical injection for a chaotic laser diode with optical feedback. The measured and calculated optical spectra consistently reveal that the mechanism of bandwidth enhancement is the interaction between the injection and chaotic laser field via beating. The bandwidth can be maximized only when the injected light is detuned into the edge of the optical spectrum of the chaotic laser field and the beating frequency exceeds the original bandwidth. The simulated dynamics maps indicate that 20 GHz broadband chaos can be obtained by commonly used laser diodes.

  19. Communication with diode laser: short distance line of sight communication using fiber optics

    International Nuclear Information System (INIS)

    Mirza, A.H.

    1999-01-01

    The objective of this project is to carry audio signal from transmitting station to a short distance receiving station along line of sight and also communication through fiber optics is performed, using diode laser light as carrier. In this project optical communication system, modulation techniques, basics of laser and causes of using diode laser are discussed briefly. Transmitter circuit and receiver circuit are fully described. Communication was performed using pulse width modulation technique. Optical fiber communication have many advantages over other type of conventional communication techniques. This report contains the description of optical fiber communication and compared with other communication systems. (author)

  20. Fuel-element failures in Hanford single-pass reactors 1944--1971

    Energy Technology Data Exchange (ETDEWEB)

    Gydesen, S.P.

    1993-07-01

    The primary objective of the Hanford Environmental Dose Reconstruction (HEDR) Project is to estimate the radiation dose that individuals could have received as a result of emissions since 1944 from the US Department of Energy`s (DOE) Hanford Site near Richland, Washington. To estimate the doses, the staff of the Source Terms Task use operating information from historical documents to approximate the radioactive emissions. One source of radioactive emissions to the Columbia River came from leaks in the aluminum cladding of the uranium metal fuel elements in single-pass reactors. The purpose of this letter report is to provide photocopies of the documents that recorded these failures. The data from these documents will be used by the Source Terms Task to determine the contribution of single-pass reactor fuel-element failures to the radioactivity of the reactor effluent from 1944 through 1971. Each referenced fuel-element failure occurring in the Hanford single-pass reactors is addressed. The first recorded failure was in 1948, the last in 1970. No records of fuel-element failures were found in documents prior to 1948. Data on the approximately 2000 failures which occurred during the 28 years (1944--1971) of Hanford single-pass reactor operations are provided in this report.

  1. The impact of external optical feedback on the degradation behavior of high-power diode lasers

    DEFF Research Database (Denmark)

    Hempel, Martin; Chi, Mingjun; Petersen, Paul Michael

    2013-01-01

    The impact of external feedback on high-power diode laser degradation is studied. For this purpose early stages of gradual degradation are prepared by accelerated aging of 808-nm-emitting AlGaAs-based devices. While the quantum well that actually experiences the highest total optical load remains...... unaffected, severe impact is observed to the cladding layers and the waveguide. Consequently hardening of diode lasers for operation under external optical feedback must necessarily involve claddings and waveguide, into which the quantum well is embedded.......The impact of external feedback on high-power diode laser degradation is studied. For this purpose early stages of gradual degradation are prepared by accelerated aging of 808-nm-emitting AlGaAs-based devices. While the quantum well that actually experiences the highest total optical load remains...

  2. Bistable optical devices with laser diodes coupled to absorbers of narrow spectral bandwidth.

    Science.gov (United States)

    Maeda, Y

    1994-06-20

    An optical signal inverter was demonstrated with a combination of the following two effects: One is the decrease of the transmission of an Er-doped YAG crystal with increasing red shift of a laser diode resulting from an increase in the injection current, and the other is a negative nonlinear absorption in which the transmission decreases inversely with increasing laser intensity. Because a hysteresis characteristic exists in the relationship between the wavelength and the injection current of the laser diode, an optical bistability was observed in this system.

  3. Optical diagnosis system for intense electron beam diode plasma

    International Nuclear Information System (INIS)

    Yang Jie; Shu Ting; Zhang Jun; Fan Yuwei; Yang Jianhua; Liu Lie; Yin Yi; Luo Ling

    2012-01-01

    A nanosecond time-resolved imaging platform for diode plasmas diagnostics has been constructed based on the pulsed electron beam accelerator and high speed framing camera (HSFC). The accelerator can provide an electrical pulse with voltages of 200-500 kV, rise-time (from 10% to 90% amplitude) of 25 ns and duration of 110 ns. The diode currents up to kA level can be extracted. The trigger signal for camera was picked up by a water-resistor voltage divider after the main switch of the accelerator, which could avoid the disadvantageous influence of the time jitter caused by the breakdown of the gas gaps. Then the sampled negative electrical pulse was converted into a transistor-transistor logic (TTL) signal (5 V) with rise time of about 1.5 ns and time jitter less than 1 ns via a processor. And this signal was taken as the synchronization time base. According to the working characteristics of the camera, the synchronization scheme relying mainly on electrical pulse delay method supplemented by light signal delay method was determined to make sure that the camera can work synchronously with the light production and transportation from the diode plasma within the time scale of nanosecond. Moreover, shielding and filtering methods were used to restrain the interference on the measurement system from the accelerator. Finally, time resolved 2-D framing images of the diode plasma were acquired. (authors)

  4. All-optical NRZ-to-RZ data format conversion with optically injected laser diode or semiconductor optical amplifier

    Science.gov (United States)

    Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh

    2006-09-01

    By injecting the optical NRZ data into a Fabry-Perot laser diode (FPLD) synchronously modulated at below threshold condition or a semiconductor optical amplifier (SOA) gain-depleted with a backward injected clock stream, the all-optical non-return to zero (NRZ) to return-to-zero (RZ) format conversion of a STM-64 date-stream for synchronous digital hierarchy (SDH) or an OC-192 data stream for synchronous optical network (SONET) in high-speed fiber-optic communication link can be performed. Without the assistance of any complicated RF electronic circuitry, the output RZ data-stream at bit rate of up to 10 Gbit/s is successfully transformed in the optically NRZ injection-locked FPLD, in which the incoming NRZ data induces gain-switching of the FPLD without DC driving current or at below threshold condition. A power penalty of 1.2 dB is measured after NRZ-to-RZ transformation in the FPLD. Alternatively, the all-optical 10Gbits/s NRZ-to-RZ format conversion can also be demonstrated in a semiconductor optical amplifier under a backward dark-optical-comb injection with its duty-cycle 70%, which is obtained by reshaping from the received data clock at 10 GHz. The incoming optical NRZ data-stream is transformed into a pulsed RZ data-stream with its duty-cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. In contrast to the FPLD, the SOA based NRZ-to-RZ converter exhibits an enhanced extinction ratio from 7 to 13 dB, and BER of 10 -13 at -18.5 dBm. In particular, the power penalty of the received RZ data-stream has greatly improved by 5 dB as compared to that obtained from FPLD.

  5. The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application

    Energy Technology Data Exchange (ETDEWEB)

    Özaydın, C. [Batman University, Engineering Faculty, Department of Computer Eng., Batman (Turkey); Güllü, Ö., E-mail: omergullu@gmail.com [Batman University, Science and Art Faculty, Department of Physics, Batman (Turkey); Pakma, O. [Batman University, Science and Art Faculty, Department of Physics, Batman (Turkey); Ilhan, S. [Siirt University, Science and Art Faculty, Department of Chemistry, Siirt (Turkey); Akkılıç, K. [Dicle University, Education Faculty, Department of Physics Education, Diyarbakır (Turkey)

    2016-05-15

    Highlights: • Optical properties and thickness of the A novel organometallic complex (OMC) film were investigated by spectroscopic ellipsometry (SE). • Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated • This paper presents the I–V analysis of Au/OMC/n-Si MIS diode. • Current–voltage and photovoltaic properties of the diode were investigated. - Abstract: In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current–voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φ{sub b}) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.

  6. The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application

    International Nuclear Information System (INIS)

    Özaydın, C.; Güllü, Ö.; Pakma, O.; Ilhan, S.; Akkılıç, K.

    2016-01-01

    Highlights: • Optical properties and thickness of the A novel organometallic complex (OMC) film were investigated by spectroscopic ellipsometry (SE). • Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated • This paper presents the I–V analysis of Au/OMC/n-Si MIS diode. • Current–voltage and photovoltaic properties of the diode were investigated. - Abstract: In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current–voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φ_b) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.

  7. Gain claming in single-pass and double-pass L-band erbium-doped fiber amplifiers

    International Nuclear Information System (INIS)

    Harun, S.W.; Ahmad, H.

    2004-01-01

    Gain clamping is demonstrated in single-pass and double-pass long wavelength band erbium-doped fiber amplifiers. A C/L-band wavelength division multiplexing coupler is used in single-pass system to generate a laser at 1566 nm. The gain for the amplifier is clamped at 15.5 dB with gain variation of less than 0.2 dB from input signal power of -40 to -14 dBm with almost negligible noise figure penalty. However, the flatness of gain spectrum is slightly degraded due to the un-optimisation of erbium-doped fiber length. The advantage of this configuration is that the oscillating light does not appear at the output of the amplifier. A highly efficient gain-clamped long wavelength band erbium-doped fiber amplifiers with improved noise figure characteristic is demonstrated by simply adding a broadband conventional band fiber Bragg grating in double pass system. The combination of the fiber Bragg grating and optical circulator has created laser in the cavity for gain clamping. By adjusting the power combination of pumps 1 and 2, the clamped gain level can be controlled. The amplifier gain is clamped at 28.1 dB from -40 to -25 dBm with gain variation of less than 0.5 dB by setting the pumps 1 and 2 at 59.5 and 50.6 mW, respectively. The gain is also flat from 1574 nm to 1604 nm with gain variation of less than 3 dB. The corresponding noise figure varies from 5.6 to 7.6 dB, which is 0.8 to 2.6 dB reduced compared to those of unclamped amplifier (Authors)

  8. Narrow linewidth diode laser modules for quantum optical sensor applications in the field and in space

    Science.gov (United States)

    Wicht, A.; Bawamia, A.; Krüger, M.; Kürbis, Ch.; Schiemangk, M.; Smol, R.; Peters, A.; Tränkle, G.

    2017-02-01

    We present the status of our efforts to develop very compact and robust diode laser modules specifically suited for quantum optics experiments in the field and in space. The paper describes why hybrid micro-integration and GaAs-diode laser technology is best suited to meet the needs of such applications. The electro-optical performance achieved with hybrid micro-integrated, medium linewidth, high power distributed-feedback master-oscillator-power-amplifier modules and with medium power, narrow linewidth extended cavity diode lasers emitting at 767 nm and 780 nm are briefly described and the status of space relevant stress tests and space heritage is summarized. We also describe the performance of an ECDL operating at 1070 nm. Further, a novel and versatile technology platform is introduced that allows for integration of any type of laser system or electro-optical module that can be constructed from two GaAs chips. This facilitates, for the first time, hybrid micro-integration, e.g. of extended cavity diode laser master-oscillator-poweramplifier modules, of dual-stage optical amplifiers, or of lasers with integrated, chip-based phase modulator. As an example we describe the implementation of an ECDL-MOPA designed for experiments on ultra-cold rubidium and potassium atoms on board a sounding rocket and give basic performance parameters.

  9. High gain semiconductor optical amplifier — Laser diode at visible wavelength

    KAUST Repository

    Shen, Chao; Lee, Changmin; Ng, Tien Khee; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

    2017-01-01

    We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

  10. High gain semiconductor optical amplifier — Laser diode at visible wavelength

    KAUST Repository

    Shen, Chao

    2017-02-07

    We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

  11. Degradation Processes in High-Power Diode Lasers under External Optical Feedback

    DEFF Research Database (Denmark)

    Tomm, Jens. W.; Hempel, Martin; Petersen, Paul Michael

    2013-01-01

    The effect of moderate external feedback on the gradual degradation of 808 nm emitting AlGaAs-based high-power broad-area diode lasers is analyzed. Eventually the quantum well that actually experiences the highest total optical load remains unaffected by the aging, while severe impact...

  12. Frequency-doubled diode laser for direct pumping of Ti:sapphire lasers

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2012-01-01

    . However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20...... fs are measured. These results open the opportunity of establishing diode laser pumped Ti:sapphire lasers for e.g. biophotonic applications like retinal optical coherence tomography or pumping of photonic crystal fibers for CARS microscopy.......A single-pass frequency doubled high-power tapered diode laser emitting nearly 1.3 W of green light suitable for direct pumping of Ti:sapphire lasers generating ultrashort pulses is demonstrated. The pump efficiencies reached 75 % of the values achieved with a commercial solid-state pump laser...

  13. Optical pumping of Rb by Ti:Sa laser and high-power laser diode

    Czech Academy of Sciences Publication Activity Database

    Buchta, Zdeněk; Rychnovský, Jan; Lazar, Josef

    2006-01-01

    Roč. 8, č. 1 (2006), s. 350-354 ISSN 1454-4164 R&D Projects: GA AV ČR IAA1065303; GA ČR GA102/04/2109 Institutional research plan: CEZ:AV0Z20650511 Keywords : optical pumping * Ti:Sa laser * laser diode * emission linewidth * spectroscopy * laser frequency stabilization Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.106, year: 2006

  14. Realization of all-optical switch and diode via Raman gain process using a Kerr field

    Science.gov (United States)

    Abbas, Muqaddar; Qamar, Sajid; Qamar, Shahid

    2016-08-01

    The idea of optical photonic crystal, which is generated using two counter-propagating fields, is revisited to study gain-assisted all-optical switch and diode using Kerr field. Two counter-propagating fields with relative detuning Δ ν generate standing-wave field pattern which interacts with a four-level atomic system. The standing-wave field pattern acts like a static photonic crystal for Δ ν =0 , however, it behaves as a moving photonic crystal for Δ ν \

  15. Refractive index gradient diagnostics: analysis of different optical systems and application to COBRA ion diode

    Energy Technology Data Exchange (ETDEWEB)

    Knyazev, B A; Greenly, J B; Hammer, D A; Krastelev, E G [Cornell Univ., Ithaca, NY (United States). Laboratory of Plasma Studies; Cuneo, M E [Sandia National Laboratories, Albuquerque, NM (United States)

    1997-12-31

    Different optical system variations for refractive index gradient diagnostics with a laser beam probe have been analyzed. A `three-telescope` optical system which permits simultaneous measurement of both the laser beam centroid deflection by a bi-cell photodiode and the spatial Fourier spectrum of the deflected beam by a streak camera has been implemented on the COBRA ion diode. The dynamics of the anode plasma layer was studied with these techniques. (author). 3 figs., 8 refs.

  16. Single-pass BPM system of the Photon Factory storage ring.

    Science.gov (United States)

    Honda, T; Katoh, M; Mitsuhashi, T; Ueda, A; Tadano, M; Kobayashi, Y

    1998-05-01

    At the 2.5 GeV ring of the Photon Factory, a single-pass beam-position monitor (BPM) system is being prepared for the storage ring and the beam transport line. In the storage ring, the injected beam position during the first several turns can be measured with a single injection pulse. The BPM system has an adequate performance, useful for the commissioning of the new low-emittance lattice. Several stripline BPMs are being installed in the beam transport line. The continuous monitoring of the orbit in the beam transport line will be useful for the stabilization of the injection energy as well as the injection beam orbit.

  17. Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2011-01-01

    For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W...... of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2....... The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected....

  18. Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

    Science.gov (United States)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

    2011-06-20

    For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

  19. Improved contrast polymer light-emitting diode with optical interference layers

    International Nuclear Information System (INIS)

    Liu, H.Y.; Sun, R.G.; Yang, K.X.; Peng, J.B.; Cao, Y.; Joo, S.K.

    2007-01-01

    An improved contrast polymer light diode based on the destructive optical interference layers deposited between the glass substrate and ITO anode is fabricated. It is unnecessary to be considered that the additional optical interference structure will impede carrier injection from the electrode to the carrier-transporting layer. Due to the quarter-wavelength thickness of medial ITO layer, the reflected light from first Cr layer is inverted 180 o out of phase with the reflected light from second Cr layer, resulting in the destructive interference. It is evident that the contrast ratio of the device with the optical interference structure is about three times higher than that of the conventional device

  20. Use of visible-laser-diode fiber optic sensors in the beverage industry and environmental controls

    Science.gov (United States)

    Pham, Van Hoi; Chu, Dinh T.; Bui, Huy; Tran, Viet L.

    1997-01-01

    The fiber-optic refractometer using visible laser diodes with wavelengths of 650 divided by 670 nm for the liquid refractive-index measurement is presented. The refractive- index measures by fiber-optic sensors of the connected configuration for different liquids with refractive indices from 1.33 to 1.5 have given the accuracy of 5.10-3. The fiber-optic refractometer was performanced for the distinguish of the salt or sugar content in the mixtures with range of 10-3 and 5.10-4, respectively. These refractometers are already to use for the sugar control systems of beverage industry and salt-water environment.

  1. The application of diode laser colorimetry coupled with fiber optic dipping probe for quantitative detection of a protein

    International Nuclear Information System (INIS)

    Kim, Sung Ho; Yoo, Jong Shin

    1996-01-01

    The in-situ, simple and inexpensive analysis of protein was achieved by the portable diode laser absorption spectrometry, which consisted of visible diode laser, photodiode, optical fiber and dipping probe. It gives comparable detection limit to the use of conventional UV/Vis spectrometer for the determination of protein by Lowry method.

  2. Holograms for laser diode: Single mode optical fiber coupling

    Science.gov (United States)

    Fuhr, P. L.

    1982-01-01

    The low coupling efficiency of semiconductor laser emissions into a single mode optical fibers place a severe restriction on their use. Associated with these conventional optical coupling techniques are stringent alignment sensitivities. Using holographic elements, the coupling efficiency may be increased and the alignment sensitivity greatly reduced. Both conventional and computer methods used in the generation of the holographic couplers are described and diagrammed. The reconstruction geometries used are shown to be somewhat restrictive but substantially less rigid than their conventional optical counterparts. Single and double hologram techniques are examined concerning their respective ease of fabrication and relative merits.

  3. Generic, network schema agnostic sparse tensor factorization for single-pass clustering of heterogeneous information networks.

    Science.gov (United States)

    Wu, Jibing; Meng, Qinggang; Deng, Su; Huang, Hongbin; Wu, Yahui; Badii, Atta

    2017-01-01

    Heterogeneous information networks (e.g. bibliographic networks and social media networks) that consist of multiple interconnected objects are ubiquitous. Clustering analysis is an effective method to understand the semantic information and interpretable structure of the heterogeneous information networks, and it has attracted the attention of many researchers in recent years. However, most studies assume that heterogeneous information networks usually follow some simple schemas, such as bi-typed networks or star network schema, and they can only cluster one type of object in the network each time. In this paper, a novel clustering framework is proposed based on sparse tensor factorization for heterogeneous information networks, which can cluster multiple types of objects simultaneously in a single pass without any network schema information. The types of objects and the relations between them in the heterogeneous information networks are modeled as a sparse tensor. The clustering issue is modeled as an optimization problem, which is similar to the well-known Tucker decomposition. Then, an Alternating Least Squares (ALS) algorithm and a feasible initialization method are proposed to solve the optimization problem. Based on the tensor factorization, we simultaneously partition different types of objects into different clusters. The experimental results on both synthetic and real-world datasets have demonstrated that our proposed clustering framework, STFClus, can model heterogeneous information networks efficiently and can outperform state-of-the-art clustering algorithms as a generally applicable single-pass clustering method for heterogeneous network which is network schema agnostic.

  4. Cavity-Enhanced Raman Spectroscopy of Natural Gas with Optical Feedback cw-Diode Lasers.

    Science.gov (United States)

    Hippler, Michael

    2015-08-04

    We report on improvements made on our previously introduced technique of cavity-enhanced Raman spectroscopy (CERS) with optical feedback cw-diode lasers in the gas phase, including a new mode-matching procedure which keeps the laser in resonance with the optical cavity without inducing long-term frequency shifts of the laser, and using a new CCD camera with improved noise performance. With 10 mW of 636.2 nm diode laser excitation and 30 s integration time, cavity enhancement achieves noise-equivalent detection limits below 1 mbar at 1 bar total pressure, depending on Raman cross sections. Detection limits can be easily improved using higher power diodes. We further demonstrate a relevant analytical application of CERS, the multicomponent analysis of natural gas samples. Several spectroscopic features have been identified and characterized. CERS with low power diode lasers is suitable for online monitoring of natural gas mixtures with sensitivity and spectroscopic selectivity, including monitoring H2, H2S, N2, CO2, and alkanes.

  5. Gamma-ray vulnerability of light-emitting diodes injection-laser diodes and pin-photodiodes for 1.3 μm wavelength-fiber optics

    International Nuclear Information System (INIS)

    Breuze, G.; Serre, J.

    1992-01-01

    With the increasing use of optical data links, it becomes essential to test for radiation vulnerability not only the transmission support - fiber and cable - but also fiber-end electro-optical components that could be exposed to hostile environment. Presently there is a significant number of radiation tests of optical fibers [1,2,3[. Here are only given a few results obtained on gradient index multimode fibers with and without phosphor. These data provide an important contribution to the improvement of all standard electro-optical pigtailed components working on the 1.3 μm wavelength: light-emitting diodes (LED), injection-laser diode modules (LDM) and pin-photodiodes (PD). Multicomponent LDM behaviour under CO 60 exposure was extensively tested. Hardened optical data links allow now to ensure medium data transmission rates on appreciable fiber - lengths despite medium steady - state gamma-ray exposure

  6. THE DETERMINATION OF A CRITICAL VALUE FOR DYNAMIC STABILITY OF SEMICONDUCTOR LASER DIODE WITH EXTERNAL OPTICAL FEEDBACK

    Directory of Open Access Journals (Sweden)

    Remzi YILDIRIM

    1998-01-01

    Full Text Available In this study, dynamic stability analysis of semiconductor laser diodes with external optical feedback has been realized. In the analysis the frequency response of the transfer function of laser diode H jw( , the transfer m function of laser diode with external optical feedback TF jw( , and optical feedback transfer function m K jw( obtained from small signal equations has been m accomplished using Nyquist stability analysis in complex domain. The effect of optical feedback on the stability of the system has been introduced and to bring the laser diode to stable condition the working critical boundary range of dampig frequency and reflection power constant (R has been determined. In the study the reflection power has been taken as ( .

  7. Ultra-Fast All-Optical Self-Aware Protection Switching Based on a Bistable Laser Diode

    DEFF Research Database (Denmark)

    An, Yi; Vukovic, Dragana; Lorences Riesgo, Abel

    2014-01-01

    We propose a novel concept of all-optical protection switching with link failure automatic awareness based on AOWFF. The scheme is experimentally demonstrated using a single MG-Y laser diode with a record switching time ~200 ps....

  8. Fast all-optical flip-flop based on a single distributed feedback laser diode.

    Science.gov (United States)

    Huybrechts, Koen; Morthier, Geert; Baets, Roel

    2008-07-21

    Since there is an increasing demand for fast networks and switches, the electronic data processing imposes a severe bottleneck and all-optical processing techniques will be required in the future. All-optical flip-flops are one of the key components because they can act as temporary memory elements. Several designs have already been demonstrated but they are often relatively slow or complex to fabricate. We demonstrate experimentally fast flip-flop operation in a single DFB laser diode which is one of the standard elements in today's telecommunication industry. Injecting continuous wave light in the laser diode, a bistability is obtained due to the spatial hole burning effect. We can switch between the two states by using pulses with energies below 200 fJ resulting in flip-flop operation with switching times below 75 ps and repetition rates of up to 2 GHz.

  9. Ultrastructural evaluation of multiple pass low energy versus single pass high energy radio-frequency treatment.

    Science.gov (United States)

    Kist, David; Burns, A Jay; Sanner, Roth; Counters, Jeff; Zelickson, Brian

    2006-02-01

    The radio-frequency (RF) device is a system capable of volumetric heating of the mid to deep dermis and selective heating of the fibrous septa strands and fascia layer. Clinically, these effects promote dermal collagen production, and tightening of these deep subcutaneous structures. A new technique of using multiple low energy passes has been described which results in lower patient discomfort and fewer side effects. This technique has also been anecdotally described as giving more reproducible and reliable clinical results of tissue tightening and contouring. This study will compare ultrastructural changes in collagen between a single pass high energy versus up to five passes of a multiple pass lower energy treatment. Three subjects were consented and treated in the preauricular region with the RF device using single or multiple passes (three or five) in the same 1.5 cm(2) treatment area with a slight delay between passes to allow tissue cooling. Biopsies from each treatment region and a control biopsy were taken immediately, 24 hours or 6 months post treatment for electron microscopic examination of the 0-1 mm and 1-2 mm levels. Sections of tissue 1 mm x 1 mm x 80 nm were examined with an RCA EMU-4 Transmission Electron Microscope. Twenty sections from 6 blocks from each 1 mm depth were examined by 2 blinded observers. The morphology and degree of collagen change in relation to area examined was compared to the control tissue, and estimated using a quantitative scale. Ultrastructural examination of tissue showed that an increased amount of collagen fibril changes with increasing passes at energies of 97 J (three passes) and 122 J (five passes), respectively. The changes seen after five multiple passes were similar to those detected after much more painful single pass high-energy treatments. This ultrastructural study shows changes in collagen fibril morphology with an increased effect demonstrated at greater depths of the skin with multiple low-fluence passes

  10. Single-pass high-gain tapered free-electron laser with transverse diffraction in the postsaturation regime

    Directory of Open Access Journals (Sweden)

    Cheng-Ying Tsai

    2018-06-01

    Full Text Available It has been well known that the resonant interaction of an ultrarelativistic electron beam and the radiation field in the single-pass high-gain free electron laser (FEL amplifier leads to the optical gain guiding. The transverse Laplacian term of the slowly varying wave equation in the linear regime can be approximated as a constant detuning parameter, i.e., |∇_{⊥}^{2}|∼k_{R}/z_{R} where k_{R} is the resonant wave number and z_{R} is the Rayleigh range of the laser. In the post-saturation regime, the radiation power begins to oscillate about an equilibrium for the untapered case while continues to grow by undulator tapering. Moreover, in this regime the gain guiding decreases and the simple constant detune is no longer valid. In this paper we study the single-pass high-gain FEL performance in the post-saturation regime with inclusion of diffraction effect and undulator tapering. Our analysis relies upon two constants of motion, one from the energy conservation and the other from the adiabatic invariant of the action variable. By constructing a two-dimensional axisymmetric wave equation and the coupled one-dimensional electron dynamical equations, the performance of a tapered FEL in the postsaturation regime can be analyzed, including the fundamental mode profile, the power efficiency and the scaled energy spread. We begin the analytical investigation with two different axisymmetric electron beam profiles, the uniform and bounded parabolic ones. It is found that the tapered FEL power efficiency can be smaller but close to the taper ratio provided the resonant phase remains constant and the beam-wave is properly matched. Such a tapered efficiency is nearly independent of transverse electron beam size before significant electron detrapping occurs. This is essentially different from the untapered case, where the power extraction efficiency is around the essential FEL gain bandwidth (or ρ, the Pierce or FEL parameter and depends on the beam

  11. All-Optical flip-flop operation using a SOA and DFB laser diode optical feedback combination

    DEFF Research Database (Denmark)

    D'Oosterlinck, W.; Öhman, Filip; Buron, Jakob Due

    2007-01-01

    We report on the switching of an all-optical flip-flop consisting of a semiconductor optical amplifier (SOA) and a distributed feedback laser diode (DFB), bidirectionally coupled to each other. Both simulation and experimental results are presented. Switching times as low as 50ps, minimal required...... switch pulse energies below lpJ and a repetition rate of 1.25GHz have been measured. Contrast ratios over 25dB have been obtained. The dependence on the pulse length and CW input power of the minimal required switch energy is investigated....

  12. Controlling Fringe Sensitivity of Electro-Optic Holography Systems Using Laser Diode Current Modulation

    Science.gov (United States)

    Bybee, Shannon J.

    2001-01-01

    Electro-Optic Holography (EOH) is a non-intrusive, laser-based, displacement measurement technique capable of static and dynamic displacement measurements. EOH is an optical interference technique in which fringe patterns that represent displacement contour maps are generated. At excessively large displacements the fringe density may be so great that individual fringes are not resolvable using typical EOH techniques. This thesis focuses on the development and implementation of a method for controlling the sensitivity of the EOH system. This method is known as Frequency Translated Electro-Optic Holography (FTEOH). It was determined that by modulating the current source of the laser diode at integer multiples of the object vibration, the fringe pattern is governed by higher order Bessel function of the first kind and the number of fringes that represent a given displacement can be controlled. The reduction of fringes is theoretically unlimited but physically limited by the frequency bandwidth of the signal generator, providing modulation to the laser diode. Although this research technique has been verified theoretically and experimentally in this thesis, due to the current laser diode capabilities it is a tedious and time consuming process to acquire data using the FTEOH technique.

  13. Invariable optical properties of phosphor-free white light-emitting diode under electrical stress

    International Nuclear Information System (INIS)

    Hao, Long; Hao, Fang; Sheng-Li, Qi; Li-Wen, Sang; Wen-Yu, Cao; Jian, Yan; Jun-Jing, Deng; Zhi-Jian, Yang; Guo-Yi, Zhang

    2010-01-01

    This paper reports that a dual-wavelength white light-emitting diode is fabricated by using a metal-organic chemical vapor deposition method. Through a 200-hours' current stress, the reverse leakage current of this light-emitting diode increases with the aging time, but the optical properties remained unchanged despite the enhanced reverse leakage current. Transmission electron microscopy and cathodeluminescence images show that indium atoms were assembled in and around V-shape pits with various compositions, which can be ascribed to the emitted white light. Evolution of cathodeluminescence intensities under electron irradiation is also performed. Combining cathodeluminescence intensities under electron irradiation and above results, the increase of leakage channels and crystalline quality degradation are realized. Although leakage channels increase with aging, potential fluctuation caused by indium aggregation can effectively avoid the impact of leakage channels. Indium aggregation can be attributed to the mechanism of preventing optical degradation in phosphor-free white light-emitting diode. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  14. Effect of a ballast zone on the hydraulic stability of a single-pass steam generator

    International Nuclear Information System (INIS)

    Belyakov, I.I.; Kvetnyj, M.A.; Loginov, D.A.

    1985-01-01

    A new mechanism of hydraulic instability of boiling channels with convection heating which reveals in the presence of a developed ballast zone at decreased loads of a counterflan steam generator operation is considered. It is shown that for the certain combinations of thermal and technical parameters pulsation regimes caused by the ballast zone displacement over the heating surface are possible. The parameter relation at which the ballast zone position becomes unstable is obtained. The effect of the ballast zone on the statis steam generator stability is established. A mechanism of whole-circuit pulsations revealed when developing start regimes of single-pass steam generator heated with liquid sodium is explained from the positions of the instability

  15. Experimental and simulation studies on a single pass, double duct solar air heater

    Energy Technology Data Exchange (ETDEWEB)

    Forson, F.K. [Kwame Nkrumah Univ. of Science and Technology, Dept. of Mechanical Engineering, Kumasi (Ghana); Rajakaruna, H. [De Montfort Univ., School of Engineering and Technology, Leicester (United Kingdom)

    2003-05-01

    A mathematical model of a single pass, double duct solar air heater (SPDDSAH) is described. The model provides a design tool capable of predicting: incident solar radiation, heat transfer coefficients, mean air flow rates, mean air temperature and relative humidity at the exit. Results from the simulation are presented and compared with experimental ones obtained on a full scale air heater and a small scale laboratory one. Reasonable agreement between the predicted and measured values is demonstrated. Predicted results from a parametric study are also presented. It is shown that significant improvement in the SPDDSAH performance can be obtained with an appropriate choice of the collector parameters and the top to bottom channel depth ratio of the two ducts. The air mass flow rate is shown to be the dominant factor in determining the overall efficiency of the heater. (Author)

  16. High-Accuracy Elevation Data at Large Scales from Airborne Single-Pass SAR Interferometry

    Directory of Open Access Journals (Sweden)

    Guy Jean-Pierre Schumann

    2016-01-01

    Full Text Available Digital elevation models (DEMs are essential data sets for disaster risk management and humanitarian relief services as well as many environmental process models. At present, on the hand, globally available DEMs only meet the basic requirements and for many services and modeling studies are not of high enough spatial resolution and lack accuracy in the vertical. On the other hand, LiDAR-DEMs are of very high spatial resolution and great vertical accuracy but acquisition operations can be very costly for spatial scales larger than a couple of hundred square km and also have severe limitations in wetland areas and under cloudy and rainy conditions. The ideal situation would thus be to have a DEM technology that allows larger spatial coverage than LiDAR but without compromising resolution and vertical accuracy and still performing under some adverse weather conditions and at a reasonable cost. In this paper, we present a novel single pass In-SAR technology for airborne vehicles that is cost-effective and can generate DEMs with a vertical error of around 0.3 m for an average spatial resolution of 3 m. To demonstrate this capability, we compare a sample single-pass In-SAR Ka-band DEM of the California Central Valley from the NASA/JPL airborne GLISTIN-A to a high-resolution LiDAR DEM. We also perform a simple sensitivity analysis to floodplain inundation. Based on the findings of our analysis, we argue that this type of technology can and should be used to replace large regions of globally available lower resolution DEMs, particularly in coastal, delta and floodplain areas where a high number of assets, habitats and lives are at risk from natural disasters. We conclude with a discussion on requirements, advantages and caveats in terms of instrument and data processing.

  17. Free-Space Optical Interconnect Employing VCSEL Diodes

    Science.gov (United States)

    Simons, Rainee N.; Savich, Gregory R.; Torres, Heidi

    2009-01-01

    Sensor signal processing is widely used on aircraft and spacecraft. The scheme employs multiple input/output nodes for data acquisition and CPU (central processing unit) nodes for data processing. To connect 110 nodes and CPU nodes, scalable interconnections such as backplanes are desired because the number of nodes depends on requirements of each mission. An optical backplane consisting of vertical-cavity surface-emitting lasers (VCSELs), VCSEL drivers, photodetectors, and transimpedance amplifiers is the preferred approach since it can handle several hundred megabits per second data throughput.The next generation of satellite-borne systems will require transceivers and processors that can handle several Gb/s of data. Optical interconnects have been praised for both their speed and functionality with hopes that light can relieve the electrical bottleneck predicted for the near future. Optoelectronic interconnects provide a factor of ten improvement over electrical interconnects.

  18. Broadband superluminescent diodes and semiconductor optical amplifiers for the spectral range 750 - 800 nm

    International Nuclear Information System (INIS)

    Il'chenko, S N; Kostin, Yu O; Kukushkin, I A; Ladugin, M A; Lapin, P I; Lobintsov, A A; Marmalyuk, Aleksandr A; Yakubovich, S D

    2011-01-01

    We have studied superluminescent diodes (SLDs) and semiconductor optical amplifiers (SOAs) based on an (Al x Ga 1-x )As/GaAs single quantum well structure with an Al content x ∼ 0.1 in a 10-nm-thick active layer. Depending on the length of the active channel, the single-mode fibre coupled cw output power of the SLDs is 1 to 30 mW at a spectral width of about 50 nm. The width of the optical gain band in the active channel exceeds 40 nm. Preliminary operating life tests have demonstrated that the devices are sufficiently reliable. (lasers)

  19. Optically controlled resonant tunneling in a double-barrier diode

    Science.gov (United States)

    Kan, S. C.; Wu, S.; Sanders, S.; Griffel, G.; Yariv, A.

    1991-03-01

    The resonant tunneling effect is optically enhanced in a GaAs/GaAlAs double-barrier structure that has partial lateral current confinement. The peak current increases and the valley current decreases simultaneously when the device surface is illuminated, due to the increased conductivity of the top layer of the structure. The effect of the lateral current confinement on the current-voltage characteristic of a double-barrier resonant tunneling structure was also studied. With increased lateral current confinement, the peak and valley current decrease at a different rate such that the current peak-to-valley ratio increases up to three times. The experimental results are explained by solving the electrostatic potential distribution in the structure using a simple three-layer model.

  20. Blue light emitting diodes for optical stimulation of quartz in retrospective dosimetry and dating

    DEFF Research Database (Denmark)

    Bøtter-Jensen, L.; Duller, G.A.T.; Murray, A.S.

    1999-01-01

    Recently developed blue light emitting diodes (LEDs) for the optical stimulation of quartz for use in routine optically stimulated luminescence (OSL) dating and retrospective dosimetry have been tested. For similar power densities, it was found that the higher energy light provided by the blue LE......, preliminary results from ramping the blue light power output with time are demonstrated. It is shown that this technique enables the separation of OSL components with differing stimulation rates.......Recently developed blue light emitting diodes (LEDs) for the optical stimulation of quartz for use in routine optically stimulated luminescence (OSL) dating and retrospective dosimetry have been tested. For similar power densities, it was found that the higher energy light provided by the blue LEDs...... (470 nm) gives order of magnitude greater rate of stimulation in quartz than that from conventional blue-green light filtered from a halogen lamp. A practical blue LED OSL configuration is described. From comparisons of OSL decay curves produced by green and blue light sources, and by examination...

  1. A digital optical phase-locked loop for diode lasers based on field programmable gate array

    Energy Technology Data Exchange (ETDEWEB)

    Xu Zhouxiang; Zhang Xian; Huang Kaikai; Lu Xuanhui [Physics Department, Zhejiang University, Hangzhou, 310027 (China)

    2012-09-15

    We have designed and implemented a highly digital optical phase-locked loop (OPLL) for diode lasers in atom interferometry. The three parts of controlling circuit in this OPLL, including phase and frequency detector (PFD), loop filter and proportional integral derivative (PID) controller, are implemented in a single field programmable gate array chip. A structure type compatible with the model MAX9382/MCH12140 is chosen for PFD and pipeline and parallelism technology have been adapted in PID controller. Especially, high speed clock and twisted ring counter have been integrated in the most crucial part, the loop filter. This OPLL has the narrow beat note line width below 1 Hz, residual mean-square phase error of 0.14 rad{sup 2} and transition time of 100 {mu}s under 10 MHz frequency step. A main innovation of this design is the completely digitalization of the whole controlling circuit in OPLL for diode lasers.

  2. Investigation of a diode-pumped intracavity optical parametric oscillator in pulsed and continuous wave operation

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Skettrup, Torben; Balle-Petersen, O.

    2001-01-01

    Summary form only given. CW and pulsed compact tunable laser sources in the infrared have widespread scientific, medical and industrial applications. Such a laser source can be obtained by use of a diode-pumped intracavity optical parametric oscillator (IOPO). We report on a IOPO based on a Yb......:YAG laser incorporating a periodically poled LiNbO3 (PPLN) crystal inside the laser cavity to take advantage of the high circulating intracavity field. The Yb:YAG crystal is pumped by a reliable 940 nm fibre-coupled diode laser. The IOPO consists of a Yb:YAG crystal coated for HR at 1030 nm, an intracavity...... lens to generate a beam waist in the PPLN crystal, a dichroic mirror to separate the laser and signal fields and two end mirrors...

  3. A digital optical phase-locked loop for diode lasers based on field programmable gate array

    Science.gov (United States)

    Xu, Zhouxiang; Zhang, Xian; Huang, Kaikai; Lu, Xuanhui

    2012-09-01

    We have designed and implemented a highly digital optical phase-locked loop (OPLL) for diode lasers in atom interferometry. The three parts of controlling circuit in this OPLL, including phase and frequency detector (PFD), loop filter and proportional integral derivative (PID) controller, are implemented in a single field programmable gate array chip. A structure type compatible with the model MAX9382/MCH12140 is chosen for PFD and pipeline and parallelism technology have been adapted in PID controller. Especially, high speed clock and twisted ring counter have been integrated in the most crucial part, the loop filter. This OPLL has the narrow beat note line width below 1 Hz, residual mean-square phase error of 0.14 rad2 and transition time of 100 μs under 10 MHz frequency step. A main innovation of this design is the completely digitalization of the whole controlling circuit in OPLL for diode lasers.

  4. Indirect optical crosstalk reduction by highly-doped backside layer in PureB single-photon avalanche diode arrays

    NARCIS (Netherlands)

    Osrečki, Željko; Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav

    2017-01-01

    A method of reducing indirect optical crosstalk in a PureB single-photon avalanche diode (SPAD) array is investigated by TCAD simulations. The reduction is accomplished by taking advantage of the enhanced optical absorption of a highly-doped Si layer (p-type, 3×1020 cm-3) on the backside of the

  5. Indirect optical crosstalk reduction by highly-doped backside layer in single-photon avalanche diode arrays

    NARCIS (Netherlands)

    Osrečki, Željko; Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav

    2018-01-01

    A method of reducing indirect optical crosstalk in single-photon avalanche diode arrays is investigated by TCAD simulations. The reduction is accomplished by taking advantage of an enhanced optical absorption in a highly-doped Si layer on the backside of the wafer. A simulation environment was

  6. Uranium Release from Acidic Weathered Hanford Sediments: Single-Pass Flow-Through and Column Experiments.

    Science.gov (United States)

    Wang, Guohui; Um, Wooyong; Wang, Zheming; Reinoso-Maset, Estela; Washton, Nancy M; Mueller, Karl T; Perdrial, Nicolas; O'Day, Peggy A; Chorover, Jon

    2017-10-03

    The reaction of acidic radioactive waste with sediments can induce mineral transformation reactions that, in turn, control contaminant fate. Here, sediment weathering by synthetic uranium-containing acid solutions was investigated using bench-scale experiments to simulate waste disposal conditions at Hanford's cribs (Hanford, WA). During acid weathering, the presence of phosphate exerted a strong influence over uranium mineralogy and a rapidly precipitated, crystalline uranium phosphate phase (meta-ankoleite [K(UO 2 )(PO 4 )·3H 2 O]) was identified using spectroscopic and diffraction-based techniques. In phosphate-free system, uranium oxyhydroxide minerals such as K-compreignacite [K 2 (UO 2 ) 6 O 4 (OH) 6 ·7H 2 O] were formed. Single-pass flow-through (SPFT) and column leaching experiments using synthetic Hanford pore water showed that uranium precipitated as meta-ankoleite during acid weathering was strongly retained in the sediments, with an average release rate of 2.67 × 10 -12 mol g -1 s -1 . In the absence of phosphate, uranium release was controlled by dissolution of uranium oxyhydroxide (compreignacite-type) mineral with a release rate of 1.05-2.42 × 10 -10 mol g -1 s -1 . The uranium mineralogy and release rates determined for both systems in this study support the development of accurate U-release models for the prediction of contaminant transport. These results suggest that phosphate minerals may be a good candidate for uranium remediation approaches at contaminated sites.

  7. Parametric analysis of plastic strain and force distribution in single pass metal spinning

    International Nuclear Information System (INIS)

    Choudhary, Shashank; Tejesh, Chiruvolu Mohan; Regalla, Srinivasa Prakash; Suresh, Kurra

    2013-01-01

    Metal spinning also known as spin forming is one of the sheet metal working processes by which an axis-symmetric part can be formed from a flat sheet metal blank. Parts are produced by pressing a blunt edged tool or roller on to the blank which in turn is mounted on a rotating mandrel. This paper discusses about the setting up a 3-D finite element simulation of single pass metal spinning in LS-Dyna. Four parameters were considered namely blank thickness, roller nose radius, feed ratio and mandrel speed and the variation in forces and plastic strain were analysed using the full-factorial design of experiments (DOE) method of simulation experiments. For some of these DOE runs, physical experiments on extra deep drawing (EDD) sheet metal were carried out using En31 tool on a lathe machine. Simulation results are able to predict the zone of unsafe thinning in the sheet and high forming forces that are hint to the necessity for less-expensive and semi-automated machine tools to help the household and small scale spinning workers widely prevalent in India

  8. Parametric analysis of plastic strain and force distribution in single pass metal spinning

    Science.gov (United States)

    Choudhary, Shashank; Tejesh, Chiruvolu Mohan; Regalla, Srinivasa Prakash; Suresh, Kurra

    2013-12-01

    Metal spinning also known as spin forming is one of the sheet metal working processes by which an axis-symmetric part can be formed from a flat sheet metal blank. Parts are produced by pressing a blunt edged tool or roller on to the blank which in turn is mounted on a rotating mandrel. This paper discusses about the setting up a 3-D finite element simulation of single pass metal spinning in LS-Dyna. Four parameters were considered namely blank thickness, roller nose radius, feed ratio and mandrel speed and the variation in forces and plastic strain were analysed using the full-factorial design of experiments (DOE) method of simulation experiments. For some of these DOE runs, physical experiments on extra deep drawing (EDD) sheet metal were carried out using En31 tool on a lathe machine. Simulation results are able to predict the zone of unsafe thinning in the sheet and high forming forces that are hint to the necessity for less-expensive and semi-automated machine tools to help the household and small scale spinning workers widely prevalent in India.

  9. Capacitive deionization of arsenic-contaminated groundwater in a single-pass mode.

    Science.gov (United States)

    Fan, Chen-Shiuan; Liou, Sofia Ya Hsuan; Hou, Chia-Hung

    2017-10-01

    A single-pass-mode capacitive deionization (CDI) reactor was used to remove arsenic from groundwater in the presence of multiple ions. The CDI reactor involved an applied voltage of 1.2 V and six cell pairs of activated carbon electrodes, each of which was 20 × 30 cm 2 . The results indicate that this method achieved an effluent arsenic concentration of 0.03 mg L -1 , which is lower than the arsenic concentration standard for drinking water and irrigation sources in Taiwan, during the charging stage. Additionally, the ability of the CDI to remove other coexisting ions was studied. The presence of other ions has a significant influence on the removal of arsenic from groundwater. From the analysis of the electrosorption selectivity, the preference for anion removal could be ordered as follows: NO 3 -  > SO 4 2-  > F -  > Cl - >As. The electrosorption selectivity for cations could be ordered as follows: Ca 2+  > Mg 2+  > Na +  ∼ K + . Moreover, monovalent cations can be replaced by divalent cations at the electrode surface in the later period of the electrosorption stage. Consequently, activated carbon-based capacitive deionization is demonstrated to be a high-potential technology for remediation of arsenic-contaminated groundwater. Copyright © 2017 Elsevier Ltd. All rights reserved.

  10. Parametric analysis of plastic strain and force distribution in single pass metal spinning

    Energy Technology Data Exchange (ETDEWEB)

    Choudhary, Shashank, E-mail: shashankbit08@gmail.com, E-mail: mohantejesh93@gmail.com, E-mail: regalla@hyderabad.bits-pilani.ac.in, E-mail: ksuresh@hyderabad.bits-pilani.ac.in; Tejesh, Chiruvolu Mohan, E-mail: shashankbit08@gmail.com, E-mail: mohantejesh93@gmail.com, E-mail: regalla@hyderabad.bits-pilani.ac.in, E-mail: ksuresh@hyderabad.bits-pilani.ac.in; Regalla, Srinivasa Prakash, E-mail: shashankbit08@gmail.com, E-mail: mohantejesh93@gmail.com, E-mail: regalla@hyderabad.bits-pilani.ac.in, E-mail: ksuresh@hyderabad.bits-pilani.ac.in; Suresh, Kurra, E-mail: shashankbit08@gmail.com, E-mail: mohantejesh93@gmail.com, E-mail: regalla@hyderabad.bits-pilani.ac.in, E-mail: ksuresh@hyderabad.bits-pilani.ac.in [Department of Mechanical Engineering, BITS-Pilani, Hyderabad Campus, Shamirpet, Hyderabad, 500078, Andhra Pradesh (India)

    2013-12-16

    Metal spinning also known as spin forming is one of the sheet metal working processes by which an axis-symmetric part can be formed from a flat sheet metal blank. Parts are produced by pressing a blunt edged tool or roller on to the blank which in turn is mounted on a rotating mandrel. This paper discusses about the setting up a 3-D finite element simulation of single pass metal spinning in LS-Dyna. Four parameters were considered namely blank thickness, roller nose radius, feed ratio and mandrel speed and the variation in forces and plastic strain were analysed using the full-factorial design of experiments (DOE) method of simulation experiments. For some of these DOE runs, physical experiments on extra deep drawing (EDD) sheet metal were carried out using En31 tool on a lathe machine. Simulation results are able to predict the zone of unsafe thinning in the sheet and high forming forces that are hint to the necessity for less-expensive and semi-automated machine tools to help the household and small scale spinning workers widely prevalent in India.

  11. Double-Sided Single-Pass Submerged Arc Welding for 2205 Duplex Stainless Steel

    Science.gov (United States)

    Luo, Jian; Yuan, Yi; Wang, Xiaoming; Yao, Zongxiang

    2013-09-01

    The duplex stainless steel (DSS), which combines the characteristics of ferritic steel and austenitic steel, is used widely. The submerged arc welding (SAW) method is usually applied to join thick plates of DSS. However, an effective welding procedure is needed in order to obtain ideal DSS welds with an appropriate proportion of ferrite (δ) and austenite (γ) in the weld zone, particularly in the melted zone and heat-affected zone. This study evaluated the effectiveness of a high efficiency double-sided single-pass (DSSP) SAW joining method for thick DSS plates. The effectiveness of the converse welding procedure, characterizations of weld zone, and mechanical properties of welded joint are analyzed. The results show an increasing appearance and continuous distribution feature of the σ phase in the fusion zone of the leading welded seam. The converse welding procedure promotes the σ phase to precipitate in the fusion zone of leading welded side. The microhardness appears to significantly increase in the center of leading welded side. Ductile fracture mode is observed in the weld zone. A mixture fracture feature appears with a shear lip and tears in the fusion zone near the fusion line. The ductility, plasticity, and microhardness of the joints have a significant relationship with σ phase and heat treatment effect influenced by the converse welding step. An available heat input controlling technology of the DSSP formation method is discussed for SAW of thick DSS plates.

  12. Intestinal permeability of forskolin by in situ single pass perfusion in rats.

    Science.gov (United States)

    Liu, Zhen-Jun; Jiang, Dong-bo; Tian, Lu-Lu; Yin, Jia-Jun; Huang, Jian-Ming; Weng, Wei-Yu

    2012-05-01

    The intestinal permeability of forskolin was investigated using a single pass intestinal perfusion (SPIP) technique in rats. SPIP was performed in different intestinal segments (duodenum, jejunum, ileum, and colon) with three concentrations of forskolin (11.90, 29.75, and 59.90 µg/mL). The investigations of adsorption and stability were performed to ensure that the disappearance of forskolin from the perfusate was due to intestinal absorption. The results of the SPIP study indicated that forskolin could be absorbed in all segments of the intestine. The effective permeability (P (eff)) of forskolin was in the range of drugs with high intestinal permeability. The P (eff) was highest in the duodenum as compared to other intestinal segments. The decreases of P (eff) in the duodenum and ileum at the highest forskolin concentration suggested a saturable transport process. The addition of verapamil, a P-glycoprotein inhibitor, significantly enhanced the permeability of forskolin across the rat jejunum. The absorbed fraction of dissolved forskolin after oral administration in humans was estimated to be 100 % calculated from rat P (eff). In conclusion, dissolved forskolin can be absorbed readily in the intestine. The low aqueous solubility of forskolin might be a crucial factor for its poor oral bioavailability. © Georg Thieme Verlag KG Stuttgart · New York.

  13. Uranium Release from Acidic Weathered Hanford Sediments: Single-Pass Flow-Through and Column Experiments

    Energy Technology Data Exchange (ETDEWEB)

    Wang, Guohui [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Um, Wooyong [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Pohang University of Science and Technology (POSTECH), Pohang, South Korea; Wang, Zheming [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Reinoso-Maset, Estela [Sierra; Washton, Nancy M. [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Mueller, Karl T. [Pacific Northwest National Laboratory, Richland, Washington 99354, United States; Perdrial, Nicolas [Department; Department; O’Day, Peggy A. [Sierra; Chorover, Jon [Department

    2017-09-21

    The reaction of acidic radioactive waste with sediments can induce mineral transformation reactions that, in turn, control contaminant fate. Here, sediment weathering by synthetic uranium-containing acid solutions was investigated using bench-scale experiments to simulate waste disposal conditions at Hanford’s cribs, USA. During acid weathering, the presence of phosphate exerted a strong influence over uranium mineralogy and a rapidly precipitated, crystalline uranium phosphate phase (meta-ankoleite [K(UO2)(PO4)·3H2O]) was identified using spectroscopic and diffraction-based techniques. In phosphate-free system, uranium oxyhydroxide minerals such as K-compreignacite [K2(UO2)6O4(OH)6·7H2O] were formed. Single-pass flow-through (SPFT) and column leaching experiments using synthetic Hanford pore water showed that uranium precipitated as meta-ankoleite during acid weathering was strongly retained in the sediments, with an average release rate of 2.67E-12 mol g-1 s-1. In the absence of phosphate, uranium release was controlled by dissolution of uranium oxyhydroxide (compreignacite-type) mineral with a release rate of 1.05-2.42E-10 mol g-1 s-1. The uranium mineralogy and release rates determined for both systems in this study support the development of accurate U-release models for prediction of contaminant transport. These results suggest that phosphate minerals may be a good candidate for uranium remediation approaches at contaminated sites.

  14. Remote online process measurements by a fiber optic diode array spectrometer

    International Nuclear Information System (INIS)

    Van Hare, D.R.; Prather, W.S.; O'Rourke, P.E.

    1986-01-01

    The development of remote online monitors for radioactive process streams is an active research area at the Savannah River Laboratory (SRL). A remote offline spectrophotometric measurement system has been developed and used at the Savannah River Plant (SRP) for the past year to determine the plutonium concentration of process solution samples. The system consists of a commercial diode array spectrophotometer modified with fiber optic cables that allow the instrument to be located remotely from the measurement cell. Recently, a fiber optic multiplexer has been developed for this instrument, which allows online monitoring of five locations sequentially. The multiplexer uses a motorized micrometer to drive one of five sets of optical fibers into the optical path of the instrument. A sixth optical fiber is used as an external reference and eliminates the need to flush out process lines to re-reference the spectrophotometer. The fiber optic multiplexer has been installed in a process prototype facility to monitor uranium loading and breakthrough of ion exchange columns. The design of the fiber optic multiplexer is discussed and data from the prototype facility are presented to demonstrate the capabilities of the measurement system

  15. Electrical and Optical Enhancement in Internally Nanopatterned Organic Light-Emitting Diodes

    Science.gov (United States)

    Fina, Michael Dane

    Organic light-emitting diodes (OLEDs) have made tremendous technological progress in the past two decades and have emerged as a top competitor for next generation light-emitting displays and lighting. State-of-the-art OLEDs have been reported in literature to approach, and even surpass, white fluorescent tube efficiency. However, despite rapid technological progress, efficiency metrics must be improved to compete with traditional inorganic light-emitting diode (LED) technology. Organic materials possess specialized traits that permit manipulations to the light-emitting cavity. Overall, as demonstrated within, these modifications can be used to improve electrical and optical device efficiencies. This work is focused at analyzing the effects that nanopatterned geometric modifications to the organic active layers play on device efficiency. In general, OLED efficiency is complicated by the complex, coupled processes which contribute to spontaneous dipole emission. A composite of three sub-systems (electrical, exciton and optical) ultimately dictate the OLED device efficiency. OLED electrical operation is believed to take place via a low-mobility-modified Schottky injection process. In the injection-limited regime, geometric effects are expected to modify the local electric field leading to device current enhancement. It is shown that the patterning effect can be used to enhance charge carrier parity, thereby enhancing overall recombination. Current density and luminance characteristics are shown to be improved by OLED nanopatterning from both the model developed within and experimental techniques. Next, the optical enhancement effects produced by the nanopatterned array are considered. Finite-difference time-domain (FDTD) simulations are used to determine positional, spectral optical enhancement for the nanopatterned device. The results show beneficial effects to the device performance. The optical enhancements are related to the reduction in internal radiative

  16. Evaluation of regional pulmonary blood flow in mitral valvular heart disease using single-pass radionuclide angiocardiography

    International Nuclear Information System (INIS)

    Chang-Soon Koh; Byung Tae Kim; Myung Chul Lee; Bo Yeon Cho

    1982-01-01

    Pulmonary hypertension in mitral valvular cardiac disease has been evaluated in 122 patients by a modified upper lung/lower count ratio using single-pass radionuclide angiocardiography. The mean upper lung/lower lung radio correlates well with pulmonary artery mean (r=0.483) and wedge pressure (r=0.804). After correction surgery of the cardiac valve, the ratio decreases and returns to normal range in patients judged clinically to have good surgical benifit. This modified method using single-pass technique provides additional simple, reproducible and nontraumatic results of regional pulmonary blood flow and appears to be correlated with the degree of pulmonary hypertension in mitral heart disease

  17. Rectifying the Optical-Field-Induced Current in Dielectrics: Petahertz Diode.

    Science.gov (United States)

    Lee, J D; Yun, Won Seok; Park, Noejung

    2016-02-05

    Investigating a theoretical model of the optical-field-induced current in dielectrics driven by strong few-cycle laser pulses, we propose an asymmetric conducting of the current by forming a heterojunction made of two distinct dielectrics with a low hole mass (m_{h}^{*}≪m_{e}^{*}) and low electron mass (m_{e}^{*}≪m_{h}^{*}), respectively. This proposition introduces the novel concept of a petahertz (10^{15}  Hz) diode to rectify the current in the petahertz domain, which should be a key ingredient for the electric signal manipulation of future light-wave electronics. Further, we suggest the candidate dielectrics for the heterojunction.

  18. FY2016 ILAW Glass Corrosion Testing with the Single-Pass Flow-Through Method

    Energy Technology Data Exchange (ETDEWEB)

    Neeway, James J. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Asmussen, Robert M. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Parruzot, Benjamin PG [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Cordova, Elsa [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Williams, Benjamin D. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Leavy, Ian I. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); Stephenson, John R. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States); McElroy, Erin M. [Pacific Northwest National Lab. (PNNL), Richland, WA (United States)

    2017-04-21

    The inventory of immobilized low-activity waste (ILAW) produced at the Hanford Tank Waste Treatment and Immobilization Plant (WTP) will be disposed of at the near-surface, on-site Integrated Disposal Facility (IDF). When groundwater comes into contact with the waste form, the glass will corrode and radionuclides will be released into the near-field environment. Because the release of the radionuclides is dependent on the dissolution rate of the glass, it is important that the performance assessment (PA) model accounts for the dissolution rate of the glass as a function of various chemical conditions. To accomplish this, an IDF PA model based on Transition State Theory (TST) can be employed. The model is able to account for changes in temperature, exposed surface area, and pH of the contacting solution as well as the effect of silicon concentrations in solution, specifically the activity of orthosilicic acid (H4SiO4), whose concentration is directly linked to the glass dissolution rate. In addition, the IDF PA model accounts for the alkali-ion exchange process as sodium is leached from the glass and into solution. The effect of temperature, pH, H4SiO4 activity, and the rate of ion-exchange can be parameterized and implemented directly into the PA rate law model. The rate law parameters are derived from laboratory tests with the single-pass flow-through (SPFT) method. To date, rate law parameters have been determined for seven ILAW glass compositions, thus additional rate law parameters on a wider range of compositions will supplement the existing body of data for PA maintenance activities. The data provided in this report can be used by ILAW glass scientists to further the understanding of ILAW glass behavior, by IDF PA modelers to use the rate law parameters in PA modeling efforts, and by Department of Energy (DOE) contractors and decision makers as they assess the IDF PA program.

  19. Ultra-high optical responsivity of semiconducting asymmetric nano-channel diodes for photon detection

    Science.gov (United States)

    Akbas, Y.; Plecenik, T.; Durina, P.; Plecenik, A.; Jukna, A.; Wicks, G.; Sobolewski, Roman

    2017-05-01

    The asymmetric nano-channel diode (ANCD) is the 2-dimensional electron gas (2DEG) semiconductor nanodevice that, unlike a conventional diode, relies on the device nanostructure and field-controlled transport in a ballistic nanometerwidth channel instead of barriers to develop its asymmetric, diode-like current-voltage (I-V) characteristics. We focus on ANCD optoelectronic properties, and demonstrate that the devices can act as very sensitive, single-photon-level, visiblelight photodetectors. Our test structures consist of 2-μm-long and 230-nm-wide channels and were fabricated using electron-beam lithography on a GaAs/AlGaAs heterostructure with a 2DEG layer, followed by reactive ion etching. The I-V curves were collected by measuring the transport current under the voltage-source biasing condition, both in the dark and under light illumination. The experiments were conducted inside a cryostat, in a temperature range from 300 K to 78 K. As an optical excitation, we used a 800-nm-wavelength, generated by a commercial Ti:sapphire laser operated either at a quasi-continuous-wave mode or as a source of 100-fs-wide pulses. The impact of the light illumination was very clear, and at low temperatures we observed a significant photocurrent Iph 0.25 μA at temperature 78 K for the incident optical power as low as 1 nW, with a limited dark-current background. The magnitude of the device optical responsivity increased linearly with the decrease of the optical power, reaching for 1-nW optical excitation the value as high as 400 A/W at room temperature and >800 A/W at 78K. The physics of the photoresponse gain mechanism in the ANCD arises from a vast disparity between the sub-picosecond transit time of photo-excited electrons travelling in the 2DEG nanochannel and the up to microsecond lifetime of photo-excited holes pushed towards the device substrate.

  20. External modes in quantum dot light emitting diode with filtered optical feedback

    International Nuclear Information System (INIS)

    Al Husseini, Hussein B.; Al Naimee, Kais A.; Al-Khursan, Amin H.; Khedir, Ali. H.

    2016-01-01

    This research reports a theoretical investigation on the role of filtered optical feedback (FOF) in the quantum dot light emitting diode (QD-LED). The underlying dynamics is affected by a sidle node, which returns to an elliptical shape when the wetting layer (WL) is neglected. Both filter width and time delay change the appearance of different dynamics (chaotic and mixed mode oscillations, MMOs). The results agree with the experimental observations. Here, the fixed point analysis for QDs was done for the first time. For QD-LED with FOF, the system transits from the coherence collapse case in conventional optical feedback to a coherent case with a filtered mode in FOF. It was found that the WL washes out the modes which is an unexpected result. This may attributed to the longer capture time of WL compared with that between QD states. Thus, WL reduces the chaotic behavior.

  1. Optical design of adjustable light emitting diode for different lighting requirements

    International Nuclear Information System (INIS)

    Lu Jia-Ning; Yu Jie; Tong Yu-Zhen; Zhang Guo-Yi

    2012-01-01

    Light emitting diode (LED) sources have been widely used for illumination. Optical design, especially freedom compact lens design is necessary to make LED sources applied in lighting industry, such as large-range interior lighting and small-range condensed lighting. For different lighting requirements, the size of target planes should be variable. In our paper we provide a method to design freedom lens according to the energy conservation law and Snell law through establishing energy mapping between the luminous flux emitted by a Lambertian LED source and a certain area of the target plane. The algorithm of our design can easily change the radius of each circular target plane, which makes the size of the target plane adjustable. Ray-tracing software Tracepro is used to validate the illuminance maps and polar-distribution maps. We design lenses for different sizes of target planes to meet specific lighting requirements. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  2. Spectral Characteristic Based on Fabry—Pérot Laser Diode with Two-Stage Optical Feedback

    International Nuclear Information System (INIS)

    Wu Jian-Wei; Nakarmi Bikash

    2013-01-01

    An optical device, consisting of a multi-mode Fabry—Pérot laser diode (MMFP-LD) with two-stage optical feedback, is proposed and experimentally demonstrated. The results show that the single-mode output with side-mode suppression ratio (SMSR) of ∼21.7 dB is attained by using the first-stage feedback. By using the second-stage feedback, the SMSR of single-mode operation could be increased to ∼28.5 dB while injection feedback power of −29 dBm is introduced into the laser diode. In the case of up to −29 dBm feedback power, the outcome SMSR is rapidly decayed to a very low level so that an obvious multi-mode operation in the output spectrum could be achieved at the feedback power level of −15.5 dBm. Thus, a transition between single- and multi-mode operations could be flexibly controlled by adjusting the injected power in the second-stage feedback system. Additionally, in the case of injection locking, the outcome SMSR and output power at the locked wavelength are as high as ∼50 dB and ∼5.8 dBm, respectively

  3. Automated alignment of optical components for high-power diode lasers

    Science.gov (United States)

    Brecher, C.; Pyschny, N.; Haag, S.; Guerrero Lule, V.

    2012-03-01

    Despite major progress in developing brilliant laser sources a huge potential for cost reductions can be found in simpler setups and automated assembly processes, especially for large volume applications. In this presentation, a concept for flexible automation in optics assembly is presented which is based on standard micro assembly systems with relatively large workspace and modular micromanipulators to enhance the system with additional degrees of freedom and a very high motion resolution. The core component is a compact flexure-based micromanipulator especially designed for the alignment of micro optical components which will be described in detail. The manipulator has been applied in different scenarios to develop and investigate automated alignment processes. This paper focuses on the automated alignment of fast axis collimation (FAC) lenses which is a crucial step during the production of diode lasers. The handling and positioning system, the measuring arrangement for process feedback during active alignment as well as the alignment strategy will be described. The fine alignment of the FAC lens is performed with the micromanipulator under concurrent analysis of the far and the near field intensity distribution. An optimization of the image processing chains for the alignment of a FAC in front of a diode bar led to cycle times of less than 30 seconds. An outlook on other applications and future work regarding the development of automated assembly processes as well as new ideas for flexible assembly systems with desktop robots will close the talk.

  4. Efficient third harmonic generation of a CW-fibered 1.5 µm laser diode

    Science.gov (United States)

    Philippe, Charles; Chea, Erick; Nishida, Yoshiki; du Burck, Frédéric; Acef, Ouali

    2016-10-01

    We report on frequency tripling of CW-Telecom laser diode using two cascaded PPLN ridge nonlinear crystals, both used in single-pass configuration. All optical components used for this development are fibered, leading to a very compact and easy to use optical setup. We have generated up to 290 mW optical power in the green range, from 800 mW only of infrared power around 1.54 µm. This result corresponds to an optical conversion efficiency P 3 ω / P ω > 36 %. To our knowledge, this is best value ever demonstrated up today for a CW-third harmonic generation in single-pass configuration. This frequency tripling experimental setup was tested over more than 2 years of continuous operation, without any interruption. The compactness and the reliability of our device make it very suitable as a transportable optical oscillator. In particular, it paves the way for embedded applications thanks to the high level of long-term stability of the optical alignments.

  5. Electro-optical properties of a polymer light-emitting diode with an injection-limited hole contact

    NARCIS (Netherlands)

    van Woudenbergh, T; Blom, PWM; Huiberts, JN

    2003-01-01

    The electro-optical characteristics of a polymer light-emitting diode with a strongly reduced hole injection have been investigated. A silver contact on poly-dialkoxy-p-phenylene vinylene decreases the hole injection by five orders of magnitude, resulting in both a highly reduced light output and

  6. 110 GHz rapid, continous tuning from an optical parametric oscillator pumped by a fiber-amplified DBR diode laser

    NARCIS (Netherlands)

    Lindsay, I.D.; Adhimoolam, B.; Gross, P.; Klein, M.E.; Boller, Klaus J.

    2005-01-01

    A singly-resonant continuous-wave optical parametric oscillator (cw-OPO) pumped by a fiber-amplified diode laser is described. Tuning of the pump source allowed the OPO output to be tuned continuously, without mode-hops, over 110 GHz in 29 ms. Discontinuous pump tuning over 20 nm in the region of

  7. Silicon Waveguide with Lateral p-i-n Diode for Nonlinearity Compensation by On-Chip Optical Phase Conjugation

    DEFF Research Database (Denmark)

    Gajda, A.; Da Ros, Francesco; Porto da Silva, Edson

    2018-01-01

    A 1-dB Q-factor improvement through optical phase conjugation in a silicon waveguide with a lateral p-i-n diode enables BER

  8. Using Pre-TMIn Treatment to Improve the Optical Properties of Green Light Emitting Diodes

    Directory of Open Access Journals (Sweden)

    Bing Xu

    2014-01-01

    Full Text Available We investigated the effects of pre-TMIn treatment on the optical properties of green light emitting diodes (LEDs. Although pre-TMIn treatment did not affect the epitaxial structure of quantum wells, it significantly improved the quality of the surface morphology relative to that of the untreated sample. Indium cluster can be seen by high-resolution transmission electron microscopy (HR-TEM, which is the explanation for the red-shift of photoluminescence (PL. Time-resolved photoluminescence measurements indicated that the sample prepared with pre-TMIn treatment had a shorter radiative decay time. As a result, the light output power of the treated green LED was higher than that of the conventional untreated one. Thus, pre-TMIn treatment appears to be a simple and efficient means of improving the performance of green LEDs.

  9. Numerical study on electronic and optical properties of organic light emitting diodes.

    Science.gov (United States)

    Kim, Kwangsik; Hwang, Youngwook; Won, Taeyoung

    2013-08-01

    In this paper, we present a finite element method (FEM) study of space charge effects in organic light emitting diodes. Our model includes a Gaussian density of states to account for the energetic disorder in organic semiconductors and the Fermi-Dirac statistics to account for the charge hopping process between uncorrelated sites. The physical model cover all the key physical processes in OLEDs, namely charge injection, transport and recombination, exciton diffusion, transfer and decay as well as light coupling, and thin-film-optics. The exciton model includes generation, diffusion, and energy transfer as well as annihilation. We assumed that the light emission originates from oscillating and thus embodied as excitons and embedded in a stack of multilayer. The out-coupled emission spectrum has been numerically calculated as a function of viewing angle, polarization, and dipole orientation. We discuss the accumulation of charges at internal interfaces and their signature in the transient response as well as the electric field distribution.

  10. Electrical and optical 3D modelling of light-trapping single-photon avalanche diode

    Science.gov (United States)

    Zheng, Tianzhe; Zang, Kai; Morea, Matthew; Xue, Muyu; Lu, Ching-Ying; Jiang, Xiao; Zhang, Qiang; Kamins, Theodore I.; Harris, James S.

    2018-02-01

    Single-photon avalanche diodes (SPADs) have been widely used to push the frontier of scientific research (e.g., quantum science and single-molecule fluorescence) and practical applications (e.g., Lidar). However, there is a typical compromise between photon detection efficiency and jitter distribution. The light-trapping SPAD has been proposed to break this trade-off by coupling the vertically incoming photons into a laterally propagating mode while maintaining a small jitter and a thin Si device layer. In this work, we provide a 3D-based optical and electrical model based on practical fabrication conditions and discuss about design parameters, which include surface texturing, photon injection position, device area, and other features.

  11. Toward a nanoimprinted nanoantenna to perform optical rectification through molecular diodes

    Science.gov (United States)

    Reynaud, C. A.; Duché, D.; Ruiz, C. M.; Palanchoke, U.; Patrone, L.; Le Rouzo, J.; Labau, S.; Frolet, N.; Gourgon, C.; Alfonso, C.; Charaï, A.; Lebouin, C.; Simon, J.-J.; Escoubas, L.

    2017-12-01

    This work presents investigations about the realization and modelization of rectenna solar cells. Rectennas are antennas coupled with a rectifier to convert the alternative current originating from the antenna into direct current that can be harvested and stored. By reducing the size of the antennas to the nanoscale, interactions with visible and near-infrared light become possible. If techniques such as nanoimprint lithography make possible the fabrication of sufficiently small plasmonic structures to act as optical antennas, the concept of rectenna still faces several challenges. One of the most critical point is to achieve rectification at optical frequencies. To address this matter, we propose to use molecular diodes (ferrocenyl-alkanethiol) that can be self-assembled on metallic surfaces such as gold or silver. In this paper, we present a basic rectenna theory as well as finite-difference time-domain (FDTD) optical simulations of plasmonic structures and experimental results of both nanoimprint fabrication of samples and characterizations by electron microscopy, Raman spectroscopy, and cyclic voltammetry techniques.

  12. Analogy between optically driven injection-locked laser diodes and driven damped linear oscillators

    International Nuclear Information System (INIS)

    Murakami, Atsushi; Shore, K. Alan

    2006-01-01

    An analytical study of optically driven laser diodes (LDs) has been undertaken to meet the requirement for a theoretical treatment for chaotic drive and synchronization occurring in the injection-locked LDs with strong injection. A small-signal analysis is performed for the sets of rate equations for the injection-locked LDs driven by a sinusoidal optical signal. In particular, as a model of chaotic driving signals from LD dynamics, an optical signal caused by direct modulation to the master LD is assumed, oscillating both in field amplitude and phase as is the case with chaotic driving signals. Consequently, we find conditions that allow reduction in the degrees of freedom of the driven LD. Under these conditions, the driven response is approximated to a simple form which is found to be equivalent to driven damped linear oscillators. The validity of the application of this theory to previous work on the synchronization of chaos and related phenomena occurring in the injection-locked LDs is demonstrated

  13. RESEARCH OF THERMO-OPTICAL INHOMOGENEITIES IN Yb-Er GLASS AT DIODE PUMPING

    Directory of Open Access Journals (Sweden)

    V. Khramov

    2016-03-01

    Full Text Available Subject of Research. Investigation method of thermo-optical distortions in solid-state lasers was developed and presented. The method can be easily used for research of small diameter (approximately 2 mm active elements. Method. The experimental method described in this paper is based on the registration of deviation of the energy center of the probe beam passing through the thermally stressed active element. Main Results. We have presented experimental results of the thermal lens optical power research in the active element made of Yb-Er glass pumped transversely by a laser diode in the following modes: without generating, free-running and Q-switching. We have submitted obtained dependences of the optical power on the pumping energy. The measurements have been performed for the two polarization components at two wavelengths (632.8 nm and 1550 nm showing the absence of explicit astigmatism of the thermal lens. Practical Relevance. Knowledge of the thermal regime of such lasers gives the possibility for more precise calculation of the resonator parameters in terms of the thermal lens occurrence.

  14. 3.1 W narrowband blue external cavity diode laser

    Science.gov (United States)

    Peng, Jue; Ren, Huaijin; Zhou, Kun; Li, Yi; Du, Weichuan; Gao, Songxin; Li, Ruijun; Liu, Jianping; Li, Deyao; Yang, Hui

    2018-03-01

    We reported a high-power narrowband blue diode laser which is suitable for subsequent nonlinear frequency conversion into the deep ultraviolet (DUV) spectral range. The laser is based on an external cavity diode laser (ECDL) system using a commercially available GaN-based high-power blue laser diode emitting at 448 nm. Longitudinal mode selection is realized by using a surface diffraction grating in Littrow configuration. The diffraction efficiency of the grating was optimized by controlling the polarization state of the laser beam incident on the grating. A maximum optical output power of 3.1 W in continuous-wave operation with a spectral width of 60 pm and a side-mode suppression ratio (SMSR) larger than 10 dB at 448.4 nm is achieved. Based on the experimental spectra and output powers, the theoretical efficiency and output power of the subsequent nonlinear frequency conversion were calculated according to the Boyd- Kleinman theory. The single-pass conversion efficiency and output power is expected to be 1.9×10-4 and 0.57 mW, respectively, at the 3.1 W output power of the ECDL. The high-power narrowband blue diode laser is very promising as pump source in the subsequent nonlinear frequency conversion.

  15. A Fabry-Pérot electro-optic sensing system using a drive-current-tuned wavelength laser diode.

    Science.gov (United States)

    Kuo, Wen-Kai; Wu, Pei-Yu; Lee, Chang-Ching

    2010-05-01

    A Fabry-Pérot enhanced electro-optic sensing system that utilizes a drive-current-tuned wavelength laser diode is presented. An electro-optic prober made of LiNbO(3) crystal with an asymmetric Fabry-Pérot cavity is used in this system. To lock the wavelength of the laser diode at resonant condition, a closed-loop power control scheme is proposed. Experiment results show that the system can keep the electro-optic prober at high sensitivity for a long working time when the closed-loop control function is on. If this function is off, the sensitivity may be fluctuated and only one-third of the best level in the worst case.

  16. The first neural probe integrated with light source (blue laser diode) for optical stimulation and electrical recording.

    Science.gov (United States)

    Park, HyungDal; Shin, Hyun-Joon; Cho, Il-Joo; Yoon, Eui-sung; Suh, Jun-Kyo Francis; Im, Maesoon; Yoon, Euisik; Kim, Yong-Jun; Kim, Jinseok

    2011-01-01

    In this paper, we report a neural probe which can selectively stimulate target neurons optically through Si wet etched mirror surface and record extracellular neural signals in iridium oxide tetrodes. Consequently, the proposed approach provides to improve directional problem and achieve at least 150/m gap distance between stimulation and recording sites by wet etched mirror surface in V-groove. Also, we developed light source, blue laser diode (OSRAM Blue Laser Diode_PL 450), integration through simple jig for one-touch butt-coupling. Furthermore, optical power and impedance of iridium oxide tetrodes were measured as 200 μW on 5 mW from LD and 206.5 k Ω at 1 kHz and we demonstrated insertion test of probe in 0.5% agarose-gel successfully. We have successfully transmitted a light of 450 nm to optical fiber through the integrated LD using by butt-coupling method.

  17. CW frequency doubling of 1029 nm radiation using single pass bulk and waveguide PPLN crystals

    Czech Academy of Sciences Publication Activity Database

    Chiodo, N.; Du Burck, F.; Hrabina, Jan; Candela, Y.; Wallerand, J. P.; Acef, O.

    2013-01-01

    Roč. 311, 15 January (2013), s. 239-244 ISSN 0030-4018 R&D Projects: GA ČR GPP102/11/P820 Institutional support: RVO:68081731 Keywords : IR laser * second harmonic generation * waveguide and bulk crystals * periodically poled lithium niobate * 1029 nm wavelength Subject RIV: BH - Optics , Masers, Lasers Impact factor: 1.542, year: 2013

  18. Single-pass beam measurements for the verification of the LHC magnetic model

    Energy Technology Data Exchange (ETDEWEB)

    Calaga, R.; Giovannozzi, M.; Redaelli, S.; Sun, Y.; Tomas, R.; Venturini-Delsolaro, W.; Zimmermann, F.

    2010-05-23

    During the 2009 LHC injection tests, the polarities and effects of specific quadrupole and higher-order magnetic circuits were investigated. A set of magnet circuits had been selected for detailed investigation based on a number of criteria. On or off-momentum difference trajectories launched via appropriate orbit correctors for varying strength settings of the magnet circuits under study - e.g. main, trim and skew quadrupoles; sextupole families and spool piece correctors; skew sextupoles, octupoles - were compared with predictions from various optics models. These comparisons allowed confirming or updating the relative polarity conventions used in the optics model and the accelerator control system, as well as verifying the correct powering and assignment of magnet families. Results from measurements in several LHC sectors are presented.

  19. Blue Light Emitting Diodes for Optical Stimulation of Quartz in Retrospective Dosimetry and Dating (invited paper)

    International Nuclear Information System (INIS)

    Botter-Jensen, L.; Duller, G.A.T.; Murray, A.S.; Banerjee, D.

    1999-01-01

    Recently developed blue light emitting diodes (LEDs) for the optical stimulation of quartz for use in routine optically stimulated luminescence (OSL) dating and retrospective dosimetry have been tested. For similar power densities, it was found that the higher energy light provided by the blue LEDs (470 nm) gives order of magnitude greater rate of stimulation in quartz than that from conventional blue-green light filtered from a halogen lamp. A practical blue LED OSL configuration is described. From comparisons of OSL decay curves produced by green and blue light sources, and by examination of the dependence of the blue LED OSL on preheat temperature, it is deduced that there is no evidence that the blue LEDs stimulate deep traps in a different manner from broadband filtered light. It is concluded that blue LEDs offer a practical alternative to existing stimulation sources. They have the significant advantages that the life-time is indefinite, and the output can be controlled electronically; this allows the power to be readily controlled by software. Unlike a filtered light source, there are no electromechanical parts, and the switch on/off times are about 10 times faster than a shutter. Finally, preliminary results from ramping the blue light power output with time are demonstrated. It is shown that this technique enables the separation of OSL components with differing stimulation rates. (author)

  20. An optically stabilized fast-switching light emitting diode as a light source for functional neuroimaging.

    Directory of Open Access Journals (Sweden)

    Daniel A Wagenaar

    Full Text Available Neuroscience research increasingly relies on optical methods for evoking neuronal activity as well as for measuring it, making bright and stable light sources critical building blocks of modern experimental setups. This paper presents a method to control the brightness of a high-power light emitting diode (LED light source to an unprecedented level of stability. By continuously monitoring the actual light output of the LED with a photodiode and feeding the result back to the LED's driver by way of a proportional-integral controller, drift was reduced to as little as 0.007% per hour over a 12-h period, and short-term fluctuations to 0.005% root-mean-square over 10 seconds. The LED can be switched on and off completely within 100 μs, a feature that is crucial when visual stimuli and light for optical recording need to be interleaved to obtain artifact-free recordings. The utility of the system is demonstrated by recording visual responses in the central nervous system of the medicinal leech Hirudo verbana using voltage-sensitive dyes.

  1. Effect of injection current and temperature on signal strength in a laser diode optical feedback interferometer.

    Science.gov (United States)

    Al Roumy, Jalal; Perchoux, Julien; Lim, Yah Leng; Taimre, Thomas; Rakić, Aleksandar D; Bosch, Thierry

    2015-01-10

    We present a simple analytical model that describes the injection current and temperature dependence of optical feedback interferometry signal strength for a single-mode laser diode. The model is derived from the Lang and Kobayashi rate equations, and is developed both for signals acquired from the monitoring photodiode (proportional to the variations in optical power) and for those obtained by amplification of the corresponding variations in laser voltage. The model shows that both the photodiode and the voltage signal strengths are dependent on the laser slope efficiency, which itself is a function of the injection current and the temperature. Moreover, the model predicts that the photodiode and voltage signal strengths depend differently on injection current and temperature. This important model prediction was proven experimentally for a near-infrared distributed feedback laser by measuring both types of signals over a wide range of injection currents and temperatures. Therefore, this simple model provides important insight into the radically different biasing strategies required to achieve optimal sensor sensitivity for both interferometric signal acquisition schemes.

  2. Determination of the optical constants of polymer light-emitting diode films from single reflection measurements

    International Nuclear Information System (INIS)

    Zhu Dexi; Shen Weidong; Ye Hui; Liu Xu; Zhen Hongyu

    2008-01-01

    We present a simple and fast method to determine the optical constant and physical thickness of polymer films from a single reflectivity measurement. A self-consistent dispersion formula of the Forouhi-Bloomer model was introduced to fit the measured spectral curves by a modified 'Downhill' simplex algorithm. Four widely used polymer light-emitting diodes materials: poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene], poly(9,9-dioctylfluoreny-2,7-diyl) (PFO), poly(N-vinyl carbazole) and poly(3,4-ethylene dioxythiophene) : poly(styrenesulfonate) were investigated by this technique. The refractive indices over the whole visible region as well as the optical band gap extracted by this method agree well with those reported in the literature. The determined physical thicknesses present a deviation less than 4% compared with the experimental values measured by the stylus profiler. The influence of scattering loss on the fitted results is discussed to demonstrate the applicability of this technology for polymer films.

  3. Analyzing degradation effects of organic light-emitting diodes via transient optical and electrical measurements

    Energy Technology Data Exchange (ETDEWEB)

    Schmidt, Tobias D., E-mail: Tobias.Schmidt@physik.uni-augsburg.de; Jäger, Lars; Brütting, Wolfgang, E-mail: Wolfgang.Bruetting@physik.uni-augsburg.de [Institute of Physics, University of Augsburg, Augsburg (Germany); Noguchi, Yutaka [Department of Electronics and Bioinformatics, School of Science and Technology, Meiji University, Kawasaki (Japan); Center of Frontier Science, Chiba University, Chiba (Japan); Ishii, Hisao [Center of Frontier Science, Chiba University, Chiba (Japan)

    2015-06-07

    Although the long-term stability of organic light-emitting diodes (OLEDs) under electrical operation made significant progress in recent years, the fundamental underlying mechanisms of the efficiency decrease during operation are not well understood. Hence, we present a comprehensive degradation study of an OLED structure comprising the well-known green phosphorescent emitter Ir(ppy){sub 3}. We use transient methods to analyze both electrical and optical changes during an accelerated aging protocol. Combining the results of displacement current measurements with time-resolved investigation of the excited states lifetimes of the emitter allows for a correlation of electrical (e.g., increase of the driving voltage due to trap formation) and optical (e.g., decrease of light-output) changes induced by degradation. Therewith, it is possible to identify two mechanisms resulting in the drop of the luminance: a decrease of the radiative quantum efficiency of the emitting system due to triplet-polaron-quenching at trapped charge carriers and a modified charge carrier injection and transport, as well as trap-assisted non-radiative recombination resulting in a deterioration of the charge carrier balance of the device.

  4. Collimating lens for light-emitting-diode light source based on non-imaging optics.

    Science.gov (United States)

    Wang, Guangzhen; Wang, Lili; Li, Fuli; Zhang, Gongjian

    2012-04-10

    A collimating lens for a light-emitting-diode (LED) light source is an essential device widely used in lighting engineering. Lens surfaces are calculated by geometrical optics and nonimaging optics. This design progress does not rely on any software optimization and any complex iterative process. This method can be used for any type of light source not only Lambertian. The theoretical model is based on point source. But the practical LED source has a certain size. So in the simulation, an LED chip whose size is 1 mm*1 mm is used to verify the feasibility of the model. The mean results show that the lenses have a very compact structure and good collimating performance. Efficiency is defined as the ratio of the flux in the illuminated plane to the flux from LED source without considering the lens material transmission. Just investigating the loss in the designed lens surfaces, the two types of lenses have high efficiencies of more than 90% and 99%, respectively. Most lighting area (possessing 80% flux) radii are no more than 5 m when the illuminated plane is 200 m away from the light source.

  5. Tunable Diode Laser Atomic Absorption Spectroscopy for Detection of Potassium under Optically Thick Conditions.

    Science.gov (United States)

    Qu, Zhechao; Steinvall, Erik; Ghorbani, Ramin; Schmidt, Florian M

    2016-04-05

    Potassium (K) is an important element related to ash and fine-particle formation in biomass combustion processes. In situ measurements of gaseous atomic potassium, K(g), using robust optical absorption techniques can provide valuable insight into the K chemistry. However, for typical parts per billion K(g) concentrations in biomass flames and reactor gases, the product of atomic line strength and absorption path length can give rise to such high absorbance that the sample becomes opaque around the transition line center. We present a tunable diode laser atomic absorption spectroscopy (TDLAAS) methodology that enables accurate, calibration-free species quantification even under optically thick conditions, given that Beer-Lambert's law is valid. Analyte concentration and collisional line shape broadening are simultaneously determined by a least-squares fit of simulated to measured absorption profiles. Method validation measurements of K(g) concentrations in saturated potassium hydroxide vapor in the temperature range 950-1200 K showed excellent agreement with equilibrium calculations, and a dynamic range from 40 pptv cm to 40 ppmv cm. The applicability of the compact TDLAAS sensor is demonstrated by real-time detection of K(g) concentrations close to biomass pellets during atmospheric combustion in a laboratory reactor.

  6. Modeling of the gain distribution for diode pumping of a solid-state laser rod with nonimaging optics.

    Science.gov (United States)

    Koshel, R J; Walmsley, I A

    1993-03-20

    We investigate the absorption distribution in a cylindrical gain medium that is pumped by a source of distributed laser diodes by means of a pump cavity developed from the edge-ray principle of nonimaging optics. The performance of this pumping arrangement is studied by using a nonsequential, numerical, three-dimensional ray-tracing scheme. A figure of merit is defined for the pump cavities that takes into account the coupling efficiency and uniformity of the absorption distribution. It is found that the nonimaging pump cavity maintains a high coupling efficiency with extended two-dimensional diode arrays and obtains a fairly uniform absorption distribution. The nonimaging cavity is compared with two other designs: a close-coupled side-pumped cavity and an imaging design in the form of a elliptical cavity. The nonimaging cavity has a better figure of merit per diode than these two designs. It also permits the use of an extended, sparse, two-dimensional diode array, which reduces thermal loading of the source and eliminates all cavity optics other than the main reflector.

  7. 3.5 W of diffraction-limited green light at 515 nm from SHG of a single-frequency tapered diode laser

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Hansen, Anders Kragh; Müller, André

    2017-01-01

    Multi-Watt efficient compact green laser sources are required for a number of applications e.g. within biophotonics, laser pumping and laser displays. We present generation of 3.5 W of diffraction-limited green light at 515 nm by second harmonic generation (SHG) of a tapered diode laser, itself...... yielding more than 9 W at 1030 nm. SHG is performed in single pass through a cascade of two nonlinear crystals with re-focusing and dispersion compensating optics between the two nonlinear crystals. The laser is single-frequency and the output power is stabilized to better than ±0.4%....

  8. Effects of surface morphology on the optical and electrical properties of Schottky diodes of CBD deposited ZnO nanostructures

    Science.gov (United States)

    Mwankemwa, Benard S.; Akinkuade, Shadrach; Maabong, Kelebogile; Nel, Jackie M.; Diale, Mmantsae

    2018-04-01

    We report on effect of surface morphology on the optical and electrical properties of chemical bath deposited Zinc oxide (ZnO) nanostructures. ZnO nanostructures were deposited on the seeded conducting indium doped tin oxide substrate positioned in three different directions in the growth solution. Field emission scanning electron microscopy was used to evaluate the morphological properties of the synthesized nanostructures and revealed that the positioning of the substrate in the growth solution affects the surface morphology of the nanostructures. The optical absorbance, photoluminescence and Raman spectroscopy of the resulting nanostructures are discussed. The electrical characterization of the Schottky diode such as barrier height, ideality factor, rectification ratios, reverse saturation current and series resistance were found to depend on the nanostructures morphology. In addition, current transport mechanism in the higher forward bias of the Schottky diode was studied and space charge limited current was found to be the dominant transport mechanism in all samples.

  9. High energy erbium laser end-pumped by a laser diode bar array coupled to a Nonimaging Optic Concentrator

    OpenAIRE

    Tanguy , Eric; Feugnet , Gilles; Pocholle , Jean-Paul; Blondeau , R.; Poisson , M.A.; Duchemin , J.P.

    1998-01-01

    International audience; A high energy Er3+, Yb3+:glass laser end pumped by a laser diode array emitting at 980 nm coupled to a Nonimaging Optic Concentrator (NOC) is demonstrated. Energy up to 100 mJ and a 16% slope efficiency are achieved in a plano-plano laser cavity. The energy transfer coefficient from Yb3+ to Er3+ is estimated by a new method.

  10. Optical coherence tomography-guided laser microsurgery for blood coagulation with continuous-wave laser diode.

    Science.gov (United States)

    Chang, Feng-Yu; Tsai, Meng-Tsan; Wang, Zu-Yi; Chi, Chun-Kai; Lee, Cheng-Kuang; Yang, Chih-Hsun; Chan, Ming-Che; Lee, Ya-Ju

    2015-11-16

    Blood coagulation is the clotting and subsequent dissolution of the clot following repair to the damaged tissue. However, inducing blood coagulation is difficult for some patients with homeostasis dysfunction or during surgery. In this study, we proposed a method to develop an integrated system that combines optical coherence tomography (OCT) and laser microsurgery for blood coagulation. Also, an algorithm for positioning of the treatment location from OCT images was developed. With OCT scanning, 2D/3D OCT images and angiography of tissue can be obtained simultaneously, enabling to noninvasively reconstruct the morphological and microvascular structures for real-time monitoring of changes in biological tissues during laser microsurgery. Instead of high-cost pulsed lasers, continuous-wave laser diodes (CW-LDs) with the central wavelengths of 450 nm and 532 nm are used for blood coagulation, corresponding to higher absorption coefficients of oxyhemoglobin and deoxyhemoglobin. Experimental results showed that the location of laser exposure can be accurately controlled with the proposed approach of imaging-based feedback positioning. Moreover, blood coagulation can be efficiently induced by CW-LDs and the coagulation process can be monitored in real-time with OCT. This technology enables to potentially provide accurate positioning for laser microsurgery and control the laser exposure to avoid extra damage by real-time OCT imaging.

  11. Optical diffraction tomography microscopy with transport of intensity equation using a light-emitting diode array

    Science.gov (United States)

    Li, Jiaji; Chen, Qian; Zhang, Jialin; Zhang, Zhao; Zhang, Yan; Zuo, Chao

    2017-08-01

    Optical diffraction tomography (ODT) is an effective label-free technique for quantitatively refractive index imaging, which enables long-term monitoring of the internal three-dimensional (3D) structures and molecular composition of biological cells with minimal perturbation. However, existing optical tomographic methods generally rely on interferometric configuration for phase measurement and sophisticated mechanical systems for sample rotation or beam scanning. Thereby, the measurement is suspect to phase error coming from the coherent speckle, environmental vibrations, and mechanical error during data acquisition process. To overcome these limitations, we present a new ODT technique based on non-interferometric phase retrieval and programmable illumination emitting from a light-emitting diode (LED) array. The experimental system is built based on a traditional bright field microscope, with the light source replaced by a programmable LED array, which provides angle-variable quasi-monochromatic illumination with an angular coverage of ±37 degrees in both x and y directions (corresponding to an illumination numerical aperture of ∼0.6). Transport of intensity equation (TIE) is utilized to recover the phase at different illumination angles, and the refractive index distribution is reconstructed based on the ODT framework under first Rytov approximation. The missing-cone problem in ODT is addressed by using the iterative non-negative constraint algorithm, and the misalignment of the LED array is further numerically corrected to improve the accuracy of refractive index quantification. Experiments on polystyrene beads and thick biological specimens show that the proposed approach allows accurate refractive index reconstruction while greatly reduced the system complexity and environmental sensitivity compared to conventional interferometric ODT approaches.

  12. Pulsed-diode-pumped, all-solid-state, electro-optically controlled picosecond Nd:YAG lasers

    International Nuclear Information System (INIS)

    Gorbunkov, Mikhail V; Shabalin, Yu V; Konyashkin, A V; Kostryukov, P V; Olenin, A N; Tunkin, V G; Morozov, V B; Rusov, V A; Telegin, L S; Yakovlev, D V

    2005-01-01

    The results of the development of repetitively pulsed, diode-pumped, electro-optically controlled picosecond Nd:YAG lasers of two designs are presented. The first design uses the active-passive mode locking with electro-optical lasing control and semiconductor saturable absorber mirrors (SESAM). This design allows the generation of 15-50-ps pulses with an energy up to 0.5 mJ and a maximum pulse repetition rate of 100 Hz. The laser of the second design generates 30-ps pulses due to combination of positive and negative electro-optical feedback and the control of the electro-optical modulator by the photocurrent of high-speed semiconductor structures. (active media. lasers)

  13. [Mobile single-pass batch hemodialysis system in intensive care medicine. Reduction of costs and workload in renal replacement therapy].

    Science.gov (United States)

    Hopf, H-B; Hochscherf, M; Jehmlich, M; Leischik, M; Ritter, J

    2007-07-01

    This paper describes the introduction of a single-pass batch hemodialysis system for renal replacement therapy in a 14 bed intensive care unit. The goals were to reduce the workload of intensive care unit physicians using an alternative and simpler method compared to continuous veno-venous hemodiafiltration (CVVHDF) and to reduce the costs of hemofiltrate solutions (80,650 EUR per year in our clinic in 2005). We describe and evaluate the process of implementation of the system as well as the achieved and prospective savings. We conclude that a close cooperation of all participants (physicians, nurses, economists, technicians) of a hospital can achieve substantial benefits for patients and employees as well as reduce the economic burden of a hospital.

  14. Silicon MIS diodes with Cr2O3 nanofilm: Optical, morphological/structural and electronic transport properties

    International Nuclear Information System (INIS)

    Erdogan, Ibrahim Y.; Guellue, O.

    2010-01-01

    In this work we report the optical, morphological and structural characterization and diode application of Cr 2 O 3 nanofilms grown on p-Si substrates by spin coating and annealing process. X-ray diffraction (XRD), non-contact mode atomic force microscopy (NC-AFM), ultraviolet-visible (UV-vis) spectroscopy and photoluminescence (PL) spectroscopy were used for characterization of nanofilms. For Cr 2 O 3 nanofilms, the average particle size determined from XRD and NC-AFM measurements was approximately 70 nm. Structure analyses of nanofilms demonstrate that the single phase Cr 2 O 3 on silicon substrate is of high a crystalline structure with a dominant in hexagonal (1 1 0) orientation. The morphologic analysis of the films indicates that the films formed from hexagonal nanoparticles are with low roughness and uniform. UV-vis absorption measurements indicate that the band gap of the Cr 2 O 3 film is 3.08 eV. The PL measurement shows that the Cr 2 O 3 nanofilm has a strong and narrow ultraviolet emission, which facilitates potential applications in future photoelectric nanodevices. Au/Cr 2 O 3 /p-Si metal/interlayer/semiconductor (MIS) diodes were fabricated for investigation of the electronic properties such as current-voltage and capacitance-voltage. Ideality factor and barrier height for Au//Cr 2 O 3 /p-Si diode were calculated as 2.15 eV and 0.74 eV, respectively. Also, interfacial state properties of the MIS diode were determined. The interface-state density of the MIS diode was found to vary from 2.90 x 10 13 eV -1 cm -2 to 8.45 x 10 12 eV -1 cm -2 .

  15. Solitary pulse-on-demand production by optical injection locking of passively Q-switched InGaN diode laser near lasing threshold

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, X., E-mail: xi.zeng@csem.ch, E-mail: dmitri.boiko@csem.ch; Stadelmann, T.; Grossmann, S.; Hoogerwerf, A. C.; Boïko, D. L., E-mail: xi.zeng@csem.ch, E-mail: dmitri.boiko@csem.ch [Centre Suisse d' Electronique et de Microtechnique SA (CSEM), CH-2002 Neuchâtel (Switzerland); Sulmoni, L.; Lamy, J.-M.; Grandjean, N. [Institute of Condensed Matter Physics (ICMP), École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

    2015-02-16

    In this letter, we investigate the behavior of a Q-switched InGaN multi-section laser diode (MSLD) under optical injection from a continuous wave external cavity diode laser. We obtain solitary optical pulse generation when the slave MSLD is driven near free running threshold, and the peak output power is significantly enhanced with respect to free running configuration. When the slave laser is driven well above threshold, optical injection reduces the peak power. Using standard semiconductor laser rate equation model, we find that both power enhancement and suppression effects are the result of partial bleaching of the saturable absorber by externally injected photons.

  16. Observation of phase noise reduction in photonically synthesized sub-THz signals using a passively mode-locked laser diode and highly selective optical filtering

    DEFF Research Database (Denmark)

    Criado, A. R.; Acedo, P.; Carpintero, G.

    2012-01-01

    A Continuous Wave (CW) sub-THz photonic synthesis setup based on a single Passively Mode-Locked Laser Diode (PMLLD) acting as a monolithic Optical Frequency Comb Generator (OFCG) and highly selective optical filtering has been implemented to evaluate the phase noise performance of the generated sub...

  17. Optical microcavities and enhanced electroluminescence from electroformed Al-Al{sub 2}O{sub 3}-Ag diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hickmott, T. W. [Department of Physics, State University of New York at Albany, Albany, New York 12222 (United States)

    2013-12-21

    Electroluminescence (EL) and electron emission into vacuum (EM) occur when a non-destructive dielectric breakdown of Al-Al{sub 2}O{sub 3}-Ag diodes, electroforming, results in the development of a filamentary region in which current-voltage (I-V) characteristics exhibit voltage-controlled negative resistance. The temperature dependence of I-V curves, EM, and, particularly, EL of Al-Al{sub 2}O{sub 3}-Ag diodes with anodic Al{sub 2}O{sub 3} thicknesses between 12 nm and 30 nm, has been studied. Two filters, a long-pass (LP) filter with transmission of photons with energies less than 3.0 eV and a short-pass (SP) filter with photon transmission between 3.0 and 4.0 eV, have been used to characterize EL. The voltage threshold for EL with the LP filter, V{sub LP}, is ∼1.5 V. V{sub LP} is nearly independent of Al{sub 2}O{sub 3} thickness and of temperature and is 0.3–0.6 V less than the threshold voltage for EL for the SP filter, V{sub SP}. EL intensity is primarily between 1.8 and 3.0 eV when the bias voltage, V{sub S} ≲ 7 V. EL in the thinnest diodes is enhanced compared to EL in thicker diodes. For increasing V{sub S}, for diodes with the smallest Al{sub 2}O{sub 3} thicknesses, there is a maximum EL intensity, L{sub MX}, at a voltage, V{sub LMX}, followed by a decrease to a plateau. L{sub MX} and EL intensity at 4.0 V in the plateau region depend exponentially on Al{sub 2}O{sub 3} thickness. The ratio of L{sub MX} at 295 K for a diode with 12 nm of Al{sub 2}O{sub 3} to L{sub MX} for a diode with 25 nm of Al{sub 2}O{sub 3} is ∼140. The ratio of EL intensity with the LP filter to EL intensity with the SP filter, LP/SP, varies between ∼3 and ∼35; it depends on Al{sub 2}O{sub 3} thickness and V{sub S}. Enhanced EL is attributed to the increase of the spontaneous emission rate of a dipole in a non-resonant optical microcavity. EL photons interact with the Ag and Al films to create surface plasmon polaritons (SPPs) at the metal-Al{sub 2}O

  18. Optical Diode Effect at Spin-Wave Excitations of the Room-Temperature Multiferroic BiFeO_{3}.

    Science.gov (United States)

    Kézsmárki, I; Nagel, U; Bordács, S; Fishman, R S; Lee, J H; Yi, Hee Taek; Cheong, S-W; Rõõm, T

    2015-09-18

    Multiferroics permit the magnetic control of the electric polarization and the electric control of the magnetization. These static magnetoelectric (ME) effects are of enormous interest: The ability to read and write a magnetic state current-free by an electric voltage would provide a huge technological advantage. Dynamic or optical ME effects are equally interesting, because they give rise to unidirectional light propagation as recently observed in low-temperature multiferroics. This phenomenon, if realized at room temperature, would allow the development of optical diodes which transmit unpolarized light in one, but not in the opposite, direction. Here, we report strong unidirectional transmission in the room-temperature multiferroic BiFeO_{3} over the gigahertz-terahertz frequency range. The supporting theory attributes the observed unidirectional transmission to the spin-current-driven dynamic ME effect. These findings are an important step toward the realization of optical diodes, supplemented by the ability to switch the transmission direction with a magnetic or electric field.

  19. Determination of temperature and residual laser energy on film fiber-optic thermal converter for diode laser surgery.

    Science.gov (United States)

    Liu, Weichao; Kong, Yaqun; Shi, Xiafei; Dong, Xiaoxi; Wang, Hong; Zhao, Jizhi; Li, Yingxin

    2017-12-01

    The diode laser was utilized in soft tissue incision of oral surgery based on the photothermic effect. The contradiction between the ablation efficiency and the thermal damage has always been in diode laser surgery, due to low absorption of its radiation in the near infrared region by biological tissues. Fiber-optic thermal converters (FOTCs) were used to improve efficiency for diode laser surgery. The purpose of this study was to determine the photothermic effect by the temperature and residual laser energy on film FOTCs. The film FOTC was made by a distal end of optical fiber impacting on paper. The external surface of the converter is covered by a film contained amorphous carbon. The diode laser with 810 nm worked at the different rated power of 1.0 W, 1.5 W, 2.0 W, 3.0 W, 4.0 W, 5.0 W, 6.0 W, 7.0 W, 8.0 W in continuous wave (CW)and pulse mode. The temperature of the distal end of optical fiber was recorded and the power of the residual laser energy from the film FOTC was measured synchronously. The temperature, residual power and the output power were analyzed by linear or exponential regression model and Pearson correlations analysis. The residual power has good linearity versus output power in CW and pulse modes (R 2  = 0.963, P film FOTCs increases exponentially with adjusted R 2  = 0.959 in continuous wave mode, while in pulsed mode with adjusted R 2  = 0.934. The temperature was elevated up to about 210 °C and eventually to be a stable state. Film FOTCs centralized approximately 50% of laser energy on the fiber tip both in CW and pulsed mode while limiting the ability of the laser light to interact directly with target tissue. Film FOTCs can concentrate part of laser energy transferred to heat on distal end of optical fiber, which have the feasibility of improving efficiency and reducing thermal damage of deep tissue.

  20. Single-pass continuous-flow leach test of PNL 76-68 glass: some selected Bead Leach I results

    International Nuclear Information System (INIS)

    Coles, D.G.

    1981-01-01

    A single-pass continuous-flow leach test of PNL 76-68 glass beads (7 mm dia) was concluded after 420 days of uninterrupted operation. Variables included in the experimental matrix were flow-rate, leachant composition, and temperature. Analysis was conducted on all leachate samples for 237 Np and 239 Pu as well as a number of nonradioactive elements. Results indicated that flow-rate and leachant systematically affected the leach rate, but only slightly. Temperature effects were significant. Plutonium leach rate was lower at higher temperature suggesting that Pu sorption onto the beads was enhanced at the higher temperature. The range of leach rates for all analyzed elements (except Pu), at both temperature, at all three flow rates, and with all three leachant compositions varied only three orders of magnitude. The range of variables used in this experiment covered those expected in many proposed repository environments. The preliminary interpretation of the results also indicated that matrix dissolution may be the dominant leaching mechanism, at least for Np in bicarbonate leachant. Regardless of the leaching mechanism the importance of this study is that it bounds the effects of repository environments when the ground water is oxidizing and when it doesn't reach the waste form until the waste has cooled to ambient rock temperature

  1. Single-pass continuous-flow leach test of PNL 76-68 glass: some selected Bead Leach I results

    International Nuclear Information System (INIS)

    Coles, D.G.

    1981-01-01

    A single-pass continuous-flow leach test of PNL 76-68 glass beads (7 mm dia) was concluded after 420 days of uninterrupted operation. Variables included in the experimental matrix were flow-rate, leachant composition, and temperature. Analysis was conducted on all leachate samples for 237 Np and 239 Pu as well as a number of nonradioactive elements. Results indicated that flow-rate and leachant systematically affected the leach rate, but only slightly. Temperature effects were significant. Plutonium leach rate was lower at higher temperature suggesting that Pu sorption onto the beads was enhanced at the higher temperature. The range of leach rates for all analyzed elements (except Pu), at both temperatures, at all three flow rates, and with all three leachant compositions varied over only three orders of magnitude. The range of variables used in this experiment covered those expected in many proposed repository environments. The preliminary interpretation of the results aPPh 3 also reacted with Mn 2 (CO) 10 and Cp 2 Mo 2 (CO) 6 to give a variety of products at room temperature. A radical mechanism was suggested

  2. Evaluation of the single-pass flow-through test to support a low-activity waste specification

    International Nuclear Information System (INIS)

    McGrail, B.P.; Peeler, D.K.

    1995-09-01

    A series of single-pass flow-through (SPFT) tests was performed on five reference low-activity waste glasses and a reference glass from the National Institute of Standards and Technology to support a product specification for low-activity waste (LAW) forms. The results showed that the SPFT test provides a means to quantitatively distinguish among LAW glass forms in terms of their forward reaction rate at a given temperature and solution pH. Two of the test glasses were also subjected to SPFT testing at Argonne National Laboratory (ANL). Forward reaction rate constants calculated from the ANL test data were 100 to over 1,000 times larger than the values obtained from the SPFT tests conducted at PNL. An analysis of the ANL results showed that they were inconsistent with independent measurements done on glasses of similar composition, the known pH-dependence of the forward rate, and with the results from low surface-area-to-volume, short duration product consistency tests. Because the data set obtained from the SPFT tests done at PNL was consistent with each of these same factors, a detailed examination of the test procedures used at both laboratories was performed to determine the cause(s) of the discrepancy. The omission of background subtraction in the data analysis procedure and the short-duration (on the order of hours) of the ANL tests are factors that may have significantly affected the calculated rates

  3. Single-Pass Percutaneous Liver Biopsy for Diffuse Liver Disease Using an Automated Device: Experience in 154 Procedures

    International Nuclear Information System (INIS)

    Rivera-Sanfeliz, Gerant; Kinney, Thomas B.; Rose, Steven C.; Agha, Ayad K.M.; Valji, Karim; Miller, Franklin J.; Roberts, Anne C.

    2005-01-01

    Purpose: To describe our experience with ultrasound (US)-guided percutaneous liver biopsies using the INRAD 18G Express core needle biopsy system.Methods: One hundred and fifty-four consecutive percutaneous core liver biopsy procedures were performed in 153 men in a single institution over 37 months. The medical charts, pathology reports, and radiology files were retrospectively reviewed. The number of needle passes, type of guidance, change in hematocrit level, and adequacy of specimens for histologic analysis were evaluated.Results: All biopsies were performed for histologic staging of chronic liver diseases. The majority of patients had hepatitis C (134/153, 90.2%). All patients were discharged to home after 4 hr of postprocedural observation. In 145 of 154 (94%) biopsies, a single needle pass was sufficient for diagnosis. US guidance was utilized in all but one of the procedures (153/154, 99.4%). The mean hematocrit decrease was 1.2% (44.1-42.9%). Pain requiring narcotic analgesia, the most frequent complication, occurred in 28 of 154 procedures (18.2%). No major complications occurred. The specimens were diagnostic in 152 of 154 procedures (98.7%).Conclusions: Single-pass percutaneous US-guided liver biopsy with the INRAD 18G Express core needle biopsy system is safe and provides definitive pathologic diagnosis of chronic liver disease. It can be performed on an outpatient basis. Routine post-biopsy monitoring of hematocrit level in stable, asymptomatic patients is probably not warranted

  4. A 3D Reconstruction Strategy of Vehicle Outline Based on Single-Pass Single-Polarization CSAR Data.

    Science.gov (United States)

    Leping Chen; Daoxiang An; Xiaotao Huang; Zhimin Zhou

    2017-11-01

    In the last few years, interest in circular synthetic aperture radar (CSAR) acquisitions has arisen as a consequence of the potential achievement of 3D reconstructions over 360° azimuth angle variation. In real-world scenarios, full 3D reconstructions of arbitrary targets need multi-pass data, which makes the processing complex, money-consuming, and time expending. In this paper, we propose a processing strategy for the 3D reconstruction of vehicle, which can avoid using multi-pass data by introducing a priori information of vehicle's shape. Besides, the proposed strategy just needs the single-pass single-polarization CSAR data to perform vehicle's 3D reconstruction, which makes the processing much more economic and efficient. First, an analysis of the distribution of attributed scattering centers from vehicle facet model is presented. And the analysis results show that a smooth and continuous basic outline of vehicle could be extracted from the peak curve of a noncoherent processing image. Second, the 3D location of vehicle roofline is inferred from layover with empirical insets of the basic outline. At last, the basic line and roofline of the vehicle are used to estimate the vehicle's 3D information and constitute the vehicle's 3D outline. The simulated and measured data processing results prove the correctness and effectiveness of our proposed strategy.

  5. Field trial of a fast single-pass transmit-receive probe during Gentilly II steam generator tube inspection

    International Nuclear Information System (INIS)

    Obrutsky, L.; Cantin, M.; Renaud, J.; Cecco, V.; Lakhan, R.; Sullivan, S.

    2000-01-01

    A new generation of transmit-receive single-pass probes, denoted as C6 or X probe, was field tested during the Gentilly II, 2000 steam generator tube inspection. This probe has a performance equivalent to rotating probes and can be used for tubesheet and full-length inspection at an inspection speed equivalent to that of bobbin probes. Existing C3 transmit-receive probes have been demonstrated to be effective in detecting circumferential cracks. The C5 probe can detect both circumferential and axial cracks and volumetric defects but cannot discriminate between them. The C6 probe expands on the capabilities of both probes in a single probe head. It can simultaneously detect and discriminate between circumferential and axial cracks to satisfy different plugging criteria. It has excellent coverage, good defect detectability, and improved sizing and characterization. Probe data is displayed in C-scan format so that the amount of data to be analyzed is similar to rotating probes. The C6 probe will significantly decrease inspection time and the need for re-inspection and tube pulling. This paper describes the advantages of the probe and demonstrates its capabilities employing signals from tube samples with calibration flaws and laboratory induced cracks. It shows the results from the field trial of the probe at Gentilly II and describes the instrumentation, hardware and software used for the inspection. (author)

  6. Sea ice local surface topography from single-pass satellite InSAR measurements: a feasibility study

    Directory of Open Access Journals (Sweden)

    W. Dierking

    2017-08-01

    Full Text Available Quantitative parameters characterizing the sea ice surface topography are needed in geophysical investigations such as studies on atmosphere–ice interactions or sea ice mechanics. Recently, the use of space-borne single-pass interferometric synthetic aperture radar (InSAR for retrieving the ice surface topography has attracted notice among geophysicists. In this paper the potential of InSAR measurements is examined for several satellite configurations and radar frequencies, considering statistics of heights and widths of ice ridges as well as possible magnitudes of ice drift. It is shown that, theoretically, surface height variations can be retrieved with relative errors  ≤  0.5 m. In practice, however, the sea ice drift and open water leads may contribute significantly to the measured interferometric phase. Another essential factor is the dependence of the achievable interferometric baseline on the satellite orbit configurations. Possibilities to assess the influence of different factors on the measurement accuracy are demonstrated: signal-to-noise ratio, presence of a snow layer, and the penetration depth into the ice. Practical examples of sea surface height retrievals from bistatic SAR images collected during the TanDEM-X Science Phase are presented.

  7. Standard practice for measurement of the glass dissolution rate using the single-pass flow-through test method

    CERN Document Server

    American Society for Testing and Materials. Philadelphia

    2010-01-01

    1.1 This practice describes a single-pass flow-through (SPFT) test method that can be used to measure the dissolution rate of a homogeneous silicate glass, including nuclear waste glasses, in various test solutions at temperatures less than 100°C. Tests may be conducted under conditions in which the effects from dissolved species on the dissolution rate are minimized to measure the forward dissolution rate at specific values of temperature and pH, or to measure the dependence of the dissolution rate on the concentrations of various solute species. 1.2 Tests are conducted by pumping solutions in either a continuous or pulsed flow mode through a reaction cell that contains the test specimen. Tests must be conducted at several solution flow rates to evaluate the effect of the flow rate on the glass dissolution rate. 1.3 This practice excludes static test methods in which flow is simulated by manually removing solution from the reaction cell and replacing it with fresh solution. 1.4 Tests may be conducted wit...

  8. Field trial of a fast single-pass transmit-receive probe during Gentilly II steam generator tube inspection

    International Nuclear Information System (INIS)

    Obrutsky, L.; Cantin, M.; Renaud, J.; Cecco, V.; Lakhan, R.; Sullivan, S.

    2000-01-01

    A new generation of transmit-receive single-pass probes, denoted as C6 or X probe, was field-tested during the Gentilly II, 2000 steam generator tube inspection. This probe has a performance equivalent to rotating probes and can be used for tubesheet and full-length inspection at an inspection speed equivalent to that of bobbin probes. Existing C3 transmit-receive probes have been demonstrated to be effective in detecting circumferential cracks. The C5 probe can detect both circumferential and axial cracks and volumetric defects but cannot discriminate between them. The C6 probe expands on the capabilities of both probes in a single probe head. It can simultaneously detect and discriminate between circumferential and axial cracks to satisfy different plugging criteria. It has excellent coverage, good defect detectability, and improved sizing and characterization. Probe data is displayed in C-scan format so that the amount of data to be analyzed is similar to rotating probes. The C6 probe will significantly decrease inspection time and the need for re-inspection and tube pulling. This paper describes the advantages of the probe and demonstrates its capabilities employing signals from tube samples with calibration flaws and laboratory induced cracks. It shows the results from the field trial of the probe at Gentilly II and describes the instrumentation, hardware and software used for the inspection. (author)

  9. Theoretical study on the thermal and optical features of a diode side-pumped alkali laser

    Science.gov (United States)

    Han, Juhong; Liu, Xiaoxu; Wang, Hongyuan; Cai, He; An, Guofei; Zhang, Wei; Wang, You

    2018-03-01

    As one of the most hopeful candidates to achieve high power performances, a diode-pumped alkali laser (DPAL) has attracted a lot of attention in the last decade. Comparing with a diode end-pumped alkali laser (DEPAL), a diode side-pumped alkali laser (DSPAL) has great potentiality to realize an even-higher output of alkali lasers. However, there are few related researching studies concern DSPAL. In this paper, we introduce a theoretical model to investigate the physical features of a double-directions side-pumped alkali laser. The distributions of the population density, temperature, and absorption power at the cross section of a vapor cell are systematically studied. The analyses should be valuable for design of a steady high-powered DPAL.

  10. Alternative laser system for cesium magneto-optical trap via optical injection locking to sideband of a 9-GHz current-modulated diode laser.

    Science.gov (United States)

    Diao, Wenting; He, Jun; Liu, Zhi; Yang, Baodong; Wang, Junmin

    2012-03-26

    By optical injection of an 852-nm extended-cavity diode laser (master laser) to lock the + 1-order sideband of a ~9-GHz-current-modulated diode laser (slave laser), we generate a pair of phase-locked lasers with a frequency difference up to ~9-GHz for a cesium (Cs) magneto-optical trap (MOT) with convenient tuning capability. For a cesium MOT, the master laser acts as repumping laser, locked to the Cs 6S₁/₂ (F = 3) - 6P₃/₂ (F' = 4) transition. When the + 1-order sideband of the 8.9536-GHz-current-modulated slave laser is optically injection-locked, the carrier operates on the Cs 6S₁/₂ (F = 4) - 6P₃/₂ (F' = 5) cooling cycle transition with -12 MHz detuning and acts as cooling/trapping laser. When carrying a 9.1926-GHz modulation signal, this phase-locked laser system can be applied in the fields of coherent population trapping and coherent manipulation of Cs atomic ground states.

  11. 2.3 Gbit/s underwater wireless optical communications using directly modulated 520 nm laser diode

    KAUST Repository

    Oubei, Hassan M.

    2015-07-30

    We experimentally demonstrate a record high-speed underwater wireless optical communication (UWOC) over 7 m distance using on-off keying non-return-to-zero (OOK-NRZ) modulation scheme. The communication link uses a commercial TO-9 packaged pigtailed 520 nm laser diode (LD) with 1.2 GHz bandwidth as the optical transmitter and an avalanche photodiode (APD) module as the receiver. At 2.3 Gbit/s transmission, the measured bit error rate of the received data is 2.23×10−4, well below the forward error correction (FEC) threshold of 2×10−3 required for error-free operation. The high bandwidth of the LD coupled with high sensitivity APD and optimized operating conditions is the key enabling factor in obtaining high bit rate transmission in our proposed system. To the best of our knowledge, this result presents the highest data rate ever achieved in UWOC systems thus far.

  12. Elimination of residual amplitude modulation in tunable diode laser wavelength modulation spectroscopy using an optical fiber delay line.

    Science.gov (United States)

    Chakraborty, Arup Lal; Ruxton, Keith; Johnstone, Walter; Lengden, Michael; Duffin, Kevin

    2009-06-08

    A new fiber-optic technique to eliminate residual amplitude modulation in tunable diode laser wavelength modulation spectroscopy is presented. The modulated laser output is split to pass in parallel through the gas measurement cell and an optical fiber delay line, with the modulation frequency / delay chosen to introduce a relative phase shift of pi between them. The two signals are balanced using a variable attenuator and recombined through a fiber coupler. In the absence of gas, the direct laser intensity modulation cancels, thereby eliminating the high background. The presence of gas induces a concentration-dependent imbalance at the coupler's output from which the absolute absorption profile is directly recovered with high accuracy using 1f detection.

  13. Modeling of thermal and optical effects in dental pulp during the irradiation with neodymium and diode lasers

    International Nuclear Information System (INIS)

    Farhat, Patricia Bahls de Almeida

    2003-01-01

    During the development of applications of high intensity lasers in the enamel and dentine, adverse thermal effects into the entire dental structure, including the pulp, must be verified. The measurement of the temperature in the intact pulp, however, is not a solved problem. For this purpose, models have been used frequently, using extracted teeth, with pulpal cavities filled with materials that simulate only thermal properties of the pulp. Current models, however, do not simulate optical properties of the pulp, not taking the remaining radiation in the pulp chamber into account. The aim of this study was to verify if the remaining radiation from neodymium and diode lasers that reach the pulp chamber, at the models using extracted bovine teeth, can cause local thermal effects. For this purpose, two models were developed, using extracted bovine teeth with their pulp chambers filled with water (simulating pulp thermal characteristics) without (model 1) and with (model 2) an optical absorbent. Models were radiated with 1 W. The obtained results show that, for both lasers, the temperature rise in model 2 pulp chamber is: up to 11 % higher than in the model 1 when the enamel is radiated; and up to 37% higher than in the model 1 when dentine is radiated (1 mm from the pulp), indicating that the level of the remaining radiation is relevant for the construction of models excited by the neodymium and diode lasers. (author)

  14. Analysis of waveguide architectures of InGaN/GaN diode lasers by nearfield optical microscopy

    Science.gov (United States)

    Friede, Sebastian; Tomm, Jens W.; Kühn, Sergei; Hoffmann, Veit; Wenzel, Hans

    2017-02-01

    Waveguide (WG) architectures of 420-nm emitting InAlGaN/GaN diode lasers are analyzed by photoluminescence (PL) and photocurrent (PC) spectroscopy using a nearfield scanning optical microscope (NSOM) for excitation and detection. The measurements with a spatial resolution of 100 nm are implemented by scanning the fiber tip along the unprepared front facets of standard devices. PL is collected by the fiber tip, whereas PCs are extracted from the contacts that are anyway present for power supply. The mechanisms of signal generation are addressed in detail. The components of the `optical active region', multiple quantum wells (MQW), WGs, and cladding layers are separately inspected. Even separate analysis of p- and n-sections of the WG become possible. Defect levels are detected in the p-part of the WG. Their presence is consistent with the doping by Mg. An increased efficiency of carrier capture into InGaN/GaN WGs compared to GaN WGs is observed. Thus, beyond the improved optical confinement, the electrical confinement is improved, as well. NSOM PL and PC at GaN based devices do not reach the clarity and spatial resolution for WG mode analysis as seen before for GaAs based devices. This is due to higher modal absorption and higher WG losses. NSOM based optical analysis turns out to be an efficient tool for analysis of single layers grown into InAlGaN/GaN diode laser structures, even if this analysis is done at a packaged ready-to-work device.

  15. Estimation of Most Favorable Optical Window Position Subject to Achieve Finest Optical Control of Lateral DDR IMPATT Diode Designed to Operate at W-Band

    Directory of Open Access Journals (Sweden)

    A. Acharyya

    2014-06-01

    Full Text Available The optimum position of the optical window (OW of illuminated lateral double-drift region (DDR impact avalanche transit time (IMPATT device has been determined subject to achieve the finest optical control of both DC and RF properties of the device. The OW is a tiny hole that has to be created on the oxide layer through which the light energy of appropriate wavelength can be coupled to the space charge region of the device. A non-sinusoidal voltage is assumed to be applied across the diode and the corresponding terminal current response is obtained from a two-dimensional (2-D large-signal (L-S simulation technique developed by the authors for illuminated lateral DDR IMPATT diode. Both the DC and L-S properties of the illuminated device based on Si, designed to operate at W-band frequencies (75 – 110 GHz are obtained from the said L-S simulation. Simulation is carried out for different incident optical power levels of different wavelengths (600 – 1000 nm by varying the position of the fixed sized OW on the oxide layer along the direction of electrical conduction of the device. Results show that, the most favorable optical tuning can be achieved when the OW is entirely created over the p-type depletion layer, i.e. when the photocurrent is purely electron dominated. Also the 700 nm wavelength is found to be most suitable wavelength for obtaining the maximum optical modulation of both DC and RF properties of the device.

  16. Spectral, spatial and temporal control of high-power diode lasers through nonlinear optical feedback

    NARCIS (Netherlands)

    van Voorst, P.D.

    2008-01-01

    A high-power diode laser offers multi-Watt output power from a small and efficient device, which makes them an interesting source for numerous applications. The spatial and spectral output however, are of reduced quality which limits the applicability. This limited quality is connected to the design

  17. Optical response characteristics of strained uniform fiber Bragg grating using laser diode

    Science.gov (United States)

    Setiono, Andi; Widiyatmoko, Bambang; Purnamaningsih, Retno Wigajatri

    2015-01-01

    The working principle of the FBG strain sensor using laser diode (λ = 1551.9 - 1553 nm) as a light source is reported. Experimental results show that by straining the bare uniform FBG (λB = 1552 nm) for every 0.01 mm in room temperature, the transmitted and refelcted power were varied according to the state of FBG strains.

  18. Comparative analysis of frequency and noise characteristics of Fabry – Perot and distributed feedback laser diodes with external optical injection locking

    Energy Technology Data Exchange (ETDEWEB)

    Afonenko, A A; Dorogush, E S [Belarusian State University, Minsk (Belarus); Malyshev, S A; Chizh, A L [B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk (Belarus)

    2015-11-30

    Using a system of coupled travelling wave equations, in the small-signal regime we analyse frequency and noise characteristics of index- or absorption-coupled distributed feedback laser diodes, as well as of Fabry – Perot (FP) laser diodes. It is shown that the weakest dependence of the direct modulation efficiency on the locking frequency in the regime of strong external optical injection locking is exhibited by a FP laser diode formed by highly reflective and antireflective coatings on the end faces of a laser structure. A reduction in the dependence of output characteristics of the laser diode on the locking frequency can be attained by decreasing the reflection coefficient of the antireflective FP mirror. (control of laser radiation parameters)

  19. Balancing Radiation and Contrast Media Dose in Single-Pass Abdominal Multidetector CT: Prospective Evaluation of Image Quality.

    Science.gov (United States)

    Camera, Luigi; Romano, Federica; Liccardo, Immacolata; Liuzzi, Raffaele; Imbriaco, Massimo; Mainenti, Pier Paolo; Pizzuti, Laura Micol; Segreto, Sabrina; Maurea, Simone; Brunetti, Arturo

    2015-11-01

    As both contrast and radiation dose affect the quality of CT images, a constant image quality in abdominal contrast-enhanced multidetector computed tomography (CE-MDCT) could be obtained balancing radiation and contrast media dose according to the age of the patients. Seventy-two (38 Men; 34 women; aged 20-83 years) patients underwent a single-pass abdominal CE-MDCT. Patients were divided into three different age groups: A (20-44 years); B (45-65 years); and C (>65 years). For each group, a different noise index (NI) and contrast media dose (370 mgI/mL) was selected as follows: A (NI, 15; 2.5 mL/kg), B (NI, 12.5; 2 mL/kg), and C (NI, 10; 1.5 mL/kg). Radiation exposure was reported as dose-length product (DLP) in mGy × cm. For quantitative analysis, signal-to-noise (SNR) and contrast-to-noise (CNR) ratios were calculated for both the liver (L) and the abdominal aorta (A). Statistical analysis was performed with a one-way analysis of variance. Standard imaging criteria were used for qualitative analysis. Although peak hepatic enhancement was 152 ± 16, 128 ± 12, and 101 ± 14 Hounsfield units (P contrast media dose (mL) administered were 476 ± 147 and 155 ± 27 for group A, 926 ± 291 and 130 ± 16 for group B, and 1981 ± 451 and 106 ± 15 for group C, respectively (P contrast media dose administered to patients of different age. Copyright © 2015 AUR. Published by Elsevier Inc. All rights reserved.

  20. Global and local characteristics of an autogenous single pass electron beam weld in thick gage UNS S41500 steel

    Energy Technology Data Exchange (ETDEWEB)

    Sarafan, S., E-mail: Sheida.Sarafan.1@ens.etsmtl.ca [École de Technologie Supérieure, Montréal, Québec, Canada H3C 1K3 (Canada); National Research Council Canada, Aerospace, Montréal, Québec, Canada H3T 2B2 (Canada); Wanjara, P., E-mail: priti.wanjara@nrc-cnrc.gc.ca [National Research Council Canada, Aerospace, Montréal, Québec, Canada H3T 2B2 (Canada); Gholipour, J., E-mail: Javad.gholipour@nrc-cnrc.gc.ca [National Research Council Canada, Aerospace, Montréal, Québec, Canada H3T 2B2 (Canada); Champliaud, H., E-mail: henri.champliaud@etsmtl.ca [École de Technologie Supérieure, Montréal, Québec, Canada H3C 1K3 (Canada)

    2016-06-01

    Electron beam welding of UNS S41500, a low carbon martensitic stainless steel utilized in hydroelectric turbine manufacturing, was investigated by applying a single pass autogenous process to penetrate a section thickness of 72 mm without preheating. In the as-welded and post-weld heat treated conditions, the evolution in microhardness and microstructure across the weldments, as well as the global and local tensile properties, were evaluated. In the as-welded condition, assessment of the microhardness and the associated microstructure across the welds led to the identification of six regions, including the fusion zone, four heat affected zones and the base metal; each of these regions consisted of different phase constituents, such as tempered martensite, untempered martensite, delta ferrite and retained austenite. Post-weld heat treatment, undertaken to temper the untempered martensite in the as-welded microstructure, was effective in homogenizing the hardness across the weldment. The mechanical response of the welds, determined through tensile testing at room temperature with an automated non-contact three-dimensional deformation measurement system, indicated that the global tensile properties in the as-welded and post-weld heat treated conditions met the acceptance criteria in the ASME Section IX standard. Also, evaluation of the local tensile properties in the fusion and heat affected zones of the as-welded samples allowed a more comprehensive understanding of the strength and ductility associated with the different microstructures in the “composite” nature of the weldment. Fractographic analysis demonstrated dimpled features on the tensile fracture surfaces and failure was associated with debonding between the martensitic matrix and the secondary phases (such as delta ferrite and retained austenite) that resulted in the formation, growth and coalescence of voids into a macroscale crack.

  1. Microstructure evolution of pure copper during a single pass of simple shear extrusion (SSE): role of shear reversal

    Energy Technology Data Exchange (ETDEWEB)

    Bagherpour, E., E-mail: e.bagherpour@semnan.ac.ir [Faculty of Metallurgical and Materials Engineering, Semnan University, Semnan (Iran, Islamic Republic of); Department of Mechanical Engineering, Doshisha University, Kyotanabe, Kyoto 610–0394 (Japan); Qods, F., E-mail: qods@semnan.ac.ir [Faculty of Metallurgical and Materials Engineering, Semnan University, Semnan (Iran, Islamic Republic of); Ebrahimi, R., E-mail: ebrahimy@shirazu.ac.ir [Department of Materials Science and Engineering, School of Engineering, Shiraz University, Shiraz (Iran, Islamic Republic of); Miyamoto, H., E-mail: hmiyamot@mail.doshisha.ac.jp [Department of Mechanical Engineering, Doshisha University, Kyotanabe, Kyoto 610–0394 (Japan)

    2016-06-01

    In the present paper the role of shear reversal on microstructure, texture and mechanical properties of pure copper during a single pass of the simple shear extrusion (SSE) process was investigated. For SSE processing an appropriate die with a linear die profile was designed and constructed, which imposes forward shear in the first half and reverse shear in the second half channels. Electron back-scattering diffraction (EBSD), transmission electron microscopy (TEM) and scanning transmission electron microscopy (STEM) were used to evaluate the microstructure of the deformed samples. The geometrical nature of this process imposes a distribution of strain results in the inhomogeneous microstructure and the hardness throughout the plane perpendicular to the extrusion direction. Strain reversal during the process results in a slight reduction in dislocation density, the hardness and mean disorientation angle of the samples, and an increase in the grain size. After a complete pass of SSE, dislocation density decreased by ~14% if compared to the middle of the process. This suggests that the dislocation annihilation occurred by the reversal of the shear strain. The simple shear textures were formed gradually and the strongest simple shear textures were observed on the middle of the SSE channel. The degree of the simple shear textures decreases with the distance from the middle plane where the shear is reversed, but the simple shear textures are still the major components after exit of the channel. Hardness variation was modeled by contributions from dislocation strengthening and grain boundary strengthening, where dislocation density is approximated by the misorientation angle of LAGBs which are regarded as dislocation cell boundaries. As a result, the hardness can be predicted successfully by the microstructural features, i.e. the low-angle boundaries, the mean misorientation angle and the fraction of high-angle grain boundaries.

  2. A diode-laser optical frequency standard based on laser-cooled Ca atoms: sub-kilohertz spectroscopy by optical shelving detection

    International Nuclear Information System (INIS)

    Oates, C.W.; Bondu, F.; Fox, R.W.; Hollberg, L.

    1999-01-01

    We report an optical frequency standard at 657 nm based on laser-cooled/trapped Ca atoms. The system consists of a novel, compact magneto-optic trap which uses 50 mW of frequency-doubled diode laser light at 423 nm and can trap >10 7 Ca atoms in 20 ms. High resolution spectroscopy on this atomic sample using the narrow 657 nm intercombination line resolves linewidths (FWHM) as narrow as 400 Hz, the natural linewidth of the transition. The spectroscopic signal-to-noise ratio is enhanced by an order of magnitude with the implementation of a ''shelving'' detection scheme on the 423 nm transition. Our present apparatus achieves a fractional frequency instability of 5 x 10 -14 in 1 s with a potential atom shot-noise-limited performance of 10 -16 τ -1/2 and excellent prospects for high accuracy. (orig.)

  3. High power diode laser remelting of metals

    International Nuclear Information System (INIS)

    Chmelickova, H; Tomastik, J; Ctvrtlik, R; Supik, J; Nemecek, S; Misek, M

    2014-01-01

    This article is focused on the laser surface remelting of the steel samples with predefined overlapping of the laser spots. The goal of our experimental work was to evaluate microstructure and hardness both in overlapped zone and single pass ones for three kinds of ferrous metals with different content of carbon, cast iron, non-alloy structural steel and tool steel. High power fibre coupled diode laser Laserline LDF 3600-100 was used with robotic guided processing head equipped by the laser beam homogenizer that creates rectangular beam shape with uniform intensity distribution. Each sample was treated with identical process parameters - laser power, beam diameter, focus position, speed of motion and 40% spot overlap. Dimensions and structures of the remelted zone, zone of the partial melting, heat affected zone and base material were detected and measured by means of laser scanning and optical microscopes. Hardness progress in the vertical axis of the overlapped zone from remelted surface layer to base material was measured and compared with the hardness of the single spots. The most hardness growth was found for cast iron, the least for structural steel. Experiment results will be used to processing parameters optimization for each tested material separately.

  4. Optical design and development of a fiber coupled high-power diode laser system for laser transmission welding of plastics

    Science.gov (United States)

    Rodríguez-Vidal, Eva; Quintana, Iban; Etxarri, Jon; Azkorbebeitia, Urko; Otaduy, Deitze; González, Francisco; Moreno, Fernando

    2012-12-01

    Laser transmission welding (LTW) of thermoplastics is a direct bonding technique already used in different industrial applications sectors such as automobiles, microfluidics, electronics, and biomedicine. LTW evolves localized heating at the interface of two pieces of plastic to be joined. One of the plastic pieces needs to be optically transparent to the laser radiation whereas the other part has to be absorbent, being that the radiation produced by high power diode lasers is a good alternative for this process. As consequence, a tailored laser system has been designed and developed to obtain high quality weld seams with weld widths between 0.7 and 1.4 mm. The developed laser system consists of two diode laser bars (50 W per bar) coupled into an optical fiber using a nonimaging solution: equalization of the beam parameter product (BPP) in the slow and fast axes by a pair of step-mirrors. The power scaling was carried out by means of a multiplexing polarization technique. The analysis of energy balance and beam quality was performed considering ray tracing simulation (ZEMAX) and experimental validation. The welding experiments were conducted on acrylonitrile/butadiene/styrene (ABS), a thermoplastic frequently used in automotive, electronics and aircraft applications, doped with two different concentrations of carbon nanotubes (0.01% and 0.05% CNTs). Quality of the weld seams on ABS was analyzed in terms of the process parameters (welding speed, laser power and clamping pressure) by visual and optical microscope inspections. Mechanical properties of weld seams were analyzed by mechanical shear tests. High quality weld seams were produced in ABS, revealing the potential of the laser developed in this work for a wide range of plastic welding applications.

  5. Double Pass 595?nm pulsed dye laser at a 6 minute interval for the treatment of port-wine stains is not more effective than single pass

    NARCIS (Netherlands)

    Peters, M. A. D.; van Drooge, A. M.; Wolkerstorfer, A.; van Gemert, M. J. C.; van der Veen, J. P. W.; Bos, J. D.; Beek, J. F.

    2012-01-01

    Background Pulsed dye laser (PDL) is the first choice for treatment of port wine stains (PWS). However, outcome is highly variable and only a few patients achieve complete clearance. The objective of the study was to compare efficacy and safety of single pass PDL with double pass PDL at a 6 minute

  6. Physicochemical properties of bio-oil and biochar produced by fast pyrolysis of stored single-pass corn stover and cobs.

    Science.gov (United States)

    Shah, Ajay; Darr, Matthew J; Dalluge, Dustin; Medic, Dorde; Webster, Keith; Brown, Robert C

    2012-12-01

    Short harvest window of corn (Zea mays) stover necessitates its storage before utilization; however, there is not enough work towards exploring the fast pyrolysis behavior of stored biomass. This study investigated the yields and the physicochemical properties (proximate and ultimate analyses, higher heating values and acidity) of the fast pyrolysis products obtained from single-pass stover and cobs stored either inside a metal building or anaerobically within plastic wraps. Biomass samples were pyrolyzed in a 183 cm long and 2.1cm inner diameter free-fall fast pyrolysis reactor. Yields of bio-oil, biochar and non-condensable gases from different biomass samples were in the ranges of 45-55, 25-37 and 11-17 wt.%, respectively, with the highest bio-oil yield from the ensiled single-pass stover. Bio-oils generated from ensiled single-pass cobs and ensiled single-pass stover were, respectively, the most and the least acidic with the modified acid numbers of 95.0 and 65.2 mg g(-1), respectively. Copyright © 2012 Elsevier Ltd. All rights reserved.

  7. Compact light-emitting diode optical fiber immobilized TiO2 reactor for photocatalytic water treatment.

    Science.gov (United States)

    O'Neal Tugaoen, Heather; Garcia-Segura, Sergi; Hristovski, Kiril; Westerhoff, Paul

    2018-02-01

    A key barrier to implementing photocatalysis is delivering light to photocatalysts that are in contact with aqueous pollutants. Slurry photocatalyst systems suffer from poor light penetration and require post-treatment to separate the catalyst. The alternative is to deposit photocatalysts on fixed films and deliver light onto the surface or the backside of the attached catalysts. In this study, TiO 2 -coated quartz optical fibers were coupled to light emitting diodes (OF/LED) to improve in situ light delivery. Design factors and mechanisms studied for OF/LEDs in a flow-through reactor included: (i) the influence of number of LED sources coupled to fibers and (ii) the use of multiple optical fibers bundled to a single LED. The light delivery mechanism from the optical fibers into the TiO 2 coatings is thoroughly discussed. To demonstrate influence of design variables, experiments were conducted in the reactor using the chlorinated pollutant para-chlorobenzoic acid (pCBA). From the degradation kinetics of pCBA, the quantum efficiencies (Φ) of oxidation and electrical energies per order (E EO ) were determined. The use of TiO 2 coated optical fiber bundles reduced the energy requirements to deliver photons and increased available surface area, which improved Φ and enhanced oxidative pollutant removal performance (E EO ). Copyright © 2017 Elsevier B.V. All rights reserved.

  8. Research and investigation of a communication chain on optical fiber with a Fabry-Perot power diode for the automotive industry

    Science.gov (United States)

    Bacis, Irina Bristena; Vasile, Alexandru; Ionescu, Ciprian; Marghescu, Cristina

    2016-12-01

    The purpose of this paper is to analyze different power devices - emitters of optical flow, from the point of view of optical coupling, emitted optical powers, optical fiber losses and receiver. The research and characterization of the transmission through a power optical system is done using a computer system specialized for the automotive industry. This system/platform can deliver current pulses that are controlled by a computer through a software (it is possible to set different parameters such as pulse repetition frequency, duty cycle, and current intensity). For the experiments a power Fabry Perot 1035 laser diode operating in pulse with μφ 1055 nm, Ith = 40 mA, and Iop =750 mA was used with a single-mode SFM 128 optical fiber and an EM type optical coupler connected through alignment. Two types of measurements were conducted to demonstrate the usefulness of the experimental structure. In the first case the amplitude of the voltage pulses was measured at the output of an optical detector with receiving diode in a built-in amplifier with a 50 kΩ load resistance. In the second stage measurements were conducted to determine the optical power injected in the optical fiber and received at the reception cell of a power meter. Another parameter of optical coupling that can be measured using the experimental structure is irradiation. This parameter is very important to determine the optimum cutting angle of the fiber for continuity welding.

  9. Optical and structural properties of CuO nanofilm: Its diode application

    International Nuclear Information System (INIS)

    Erdogan, Ibrahim Y.; Guellue, O.

    2010-01-01

    The high crystalline CuO nanofilms have been prepared by spin coating and annealing combined with a simple chemical method. The obtained films have been characterized by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, ultraviolet-vis (UV-vis) spectroscopy and photoluminescence (PL) spectroscopy. Structural analysis results demonstrate that the single phase CuO on Si (1 0 0) substrate is of high a crystalline structure with a dominant in monoclinic (1 1 1) orientation. FT-IR results confirm the formation of pure CuO phase. UV-vis absorption measurements indicate that the band gap of the CuO films is 2.64 eV. The PL spectrum of the CuO films shows a broad emission band centered at 467 nm, which is consistent with absorption measurement. Also, Au/CuO/p-Si metal/interlayer/semiconductor (MIS) diodes have been fabricated. Electronic properties (current-voltage) of these structures were investigated. In addition, the interfacial state properties of the MIS diode were obtained. The interface-state density of the MIS diode was found to vary from 6.21 x 10 12 to 1.62 x 10 12 eV -1 cm -2 .

  10. 1.5 W green light generation by single-pass second harmonic generation of a single-frequency tapered diode laser

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Andersen, Peter E.; Sumpf, Bernd

    2009-01-01

    More than 1.5 W of green light at 531 nm is generated by singlepass second harmonic generation in periodically poled MgO:LiNbO3. The pump laser is a high power tapered laser with a distributed Bragg reflector etched in the ridge section of the laser to provide wavelength selectivity. The output...... power of the single-frequency tapered laser is 9.3 W in continuous wave operation. A conversion efficiency of 18.5 % was achieved in the experiments....

  11. High-resolution low-frequency fluctuation map of a multimode laser diode subject to filtered optical feedback via a fiber Bragg grating.

    Science.gov (United States)

    Baladi, Fadwa; Lee, Min Won; Burie, Jean-René; Bettiati, Mauro A; Boudrioua, Azzedine; Fischer, Alexis P A

    2016-07-01

    A highly detailed and extended map of low-frequency fluctuations is established for a high-power multi-mode 980 nm laser diode subject to filtered optical feedback from a fiber Bragg grating. The low-frequency fluctuations limits and substructures exhibit substantial differences with previous works.

  12. Photonic synthesis of continuous‐wave millimeter‐wave signals using a passively mode‐locked laser diode and selective optical filtering

    DEFF Research Database (Denmark)

    Acedo, P.; Carpintero, G.; Criado, A.R.

    2012-01-01

    We report a photonic synthesis scheme for continuous wave millimeter‐wave signal generation using a single passively mode‐locked laser diode (PMLLD), optical filtering and photomixing in a fast photodiode.The phase noise of the photonically synthesized signals is evaluated and inherits...

  13. Demonstration of frequency control and CW diode laser injection control of a titanium-doped sapphire ring laser with no internal optical elements

    Science.gov (United States)

    Bair, Clayton H.; Brockman, Philip; Hess, Robert V.; Modlin, Edward A.

    1988-01-01

    Theoretical and experimental frequency narrowing studies of a Ti:sapphire ring laser with no intracavity optical elements are reported. Frequency narrowing has been achieved using a birefringent filter between a partially reflecting reverse wave suppressor mirror and the ring cavity output mirror. Results of CW diode laser injection seeding are reported.

  14. Low-loss, low-confinement GaAs-AlGaAs DQW laser diode with optical trap layer for high-power operation

    NARCIS (Netherlands)

    Buda, M.; Vleuten, van der W.C.; Iordache, G.; Acket, G.A.; Roer, van de T.G.; Es, van C.M.; Roy, van B.H.; Smalbrugge, E.

    1999-01-01

    A low-confinement asymmetric GaAs-AlGaAs double-quantum-well molecular-beam-epitaxy grown laser diode structure with optical trap layer is characterized, The value of the internal absorption coefficient is as low as 1.4 cm-1, while keeping the series resistance at values comparable cm with

  15. Simulation of Terahertz Frequency Sources. Polar-Optical Phonon Enhancement of Harmonic Generation in Schottky Diodes

    National Research Council Canada - National Science Library

    Gelmont, Boris

    2002-01-01

    ... polar optical vibration frequency When a high frequency input signal is applied to a frequency multiplier device polar-optical phonons can enhance the non-linearities inherent in this device, enabling...

  16. Influence of transmission bit rate on performance of optical fibre communication systems with direct modulation of laser diodes

    International Nuclear Information System (INIS)

    Ahmed, Moustafa F

    2009-01-01

    This paper reports on the influence of the transmission bit rate on the performance of optical fibre communication systems employing laser diodes subjected to high-speed direct modulation. The performance is evaluated in terms of the bit error rate (BER) and power penalty associated with increasing the transmission bit rate while keeping the transmission distance. The study is based on numerical analysis of the stochastic rate equations of the laser diode and takes into account noise mechanisms in the receiver. Correlation between BER and the Q-parameter of the received signal is presented. The relative contributions of the transmitter noise and the circuit and shot noises of the receiver to BER are quantified as functions of the transmission bit rate. The results show that the power penalty at BER = 10 -9 required to keep the transmission distance increases moderately with the increase in the bit rate near 1 Gbps and at high bias currents. In this regime, the shot noise is the main contributor to BER. At higher bit rates and lower bias currents, the power penalty increases remarkably, which comes mainly from laser noise induced by the pseudorandom bit-pattern effect.

  17. Electrical characterization of Au/quercetin/n-Si heterojunction diode and optical analysis of quercetin thin film

    International Nuclear Information System (INIS)

    Tombak, Ahmet; Özaydin, C.; Boğa, M.; Kiliçoğlu, T.

    2016-01-01

    Quercetin (3,5,7,3’,4’-pentahydroxyflavone, QE), one of the most widely distributed flavonoids in fruits and vegetables, has been reported to possess a wide variety of biological effects, including anti-oxidative, anti-inflammatory, anti-apoptosis, hepatoprotective, renoprotective and neuroprotective effects. In this study organic-inorganic junctions were fabricated by forming quercetin complex thin film using spin coating technique on n-Si and evaporating Au metal on the film. Optical properties of quercetin thin film were studied with the help of spectrophotometer. The current-voltage (I-V) characteristic of Au/quercetin/n-Si heterojunction diode was investigated at room temperature in dark. Some basic parameters of the diode such as ideality factor, rectification ratio, barrier height, series resistance and shunt resistance were calculated using dark current-voltage measurement. It was also seen that the device had good sensitivity to the light under 40-100 mW/cm"2 illumination conditions.

  18. Monolithic Flexible Vertical GaN Light-Emitting Diodes for a Transparent Wireless Brain Optical Stimulator.

    Science.gov (United States)

    Lee, Han Eol; Choi, JeHyuk; Lee, Seung Hyun; Jeong, Minju; Shin, Jung Ho; Joe, Daniel J; Kim, DoHyun; Kim, Chang Wan; Park, Jung Hwan; Lee, Jae Hee; Kim, Daesoo; Shin, Chan-Soo; Lee, Keon Jae

    2018-05-18

    Flexible inorganic-based micro light-emitting diodes (µLEDs) are emerging as a significant technology for flexible displays, which is an important area for bilateral visual communication in the upcoming Internet of Things era. Conventional flexible lateral µLEDs have been investigated by several researchers, but still have significant issues of power consumption, thermal stability, lifetime, and light-extraction efficiency on plastics. Here, high-performance flexible vertical GaN light-emitting diodes (LEDs) are demonstrated by silver nanowire networks and monolithic fabrication. Transparent, ultrathin GaN LED arrays adhere to a human fingernail and stably glow without any mechanical deformation. Experimental studies provide outstanding characteristics of the flexible vertical μLEDs (f-VLEDs) with high optical power (30 mW mm -2 ), long lifetime (≈12 years), and good thermal/mechanical stability (100 000 bending/unbending cycles). The wireless light-emitting system on the human skin is successfully realized by transferring the electrical power f-VLED. Finally, the high-density GaN f-VLED arrays are inserted onto a living mouse cortex and operated without significant histological damage of brain. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Simple and efficient method of spin-polarizing a metastable helium beam by diode laser optical pumping

    International Nuclear Information System (INIS)

    Granitza, B.; Salvietti, M.; Torello, E.; Mattera, L.; Sasso, A.

    1995-01-01

    Diode laser optical pumping to produce a highly spin-polarized metastable He beam to be used in a spin-polarized metastable atom deexcitation spectroscopy experiment on magnetized surfaces is described. Efficient pumping of the beam is performed by means of an SDL-6702 distributed Bragg reflector diode laser which yields 50 mW of output power in a single longitudinal mode at 1083 nm, the resonance wavelength for the 2 3 S→2 3 P 0,1,2 (D 0 , D 1 , and D 2 ) transitions of He*. The light is circularly polarized by a quarter-wave plate, allowing easy change of the sense of atomic polarization. The laser frequency can be locked to the atomic transition for several hours by phase-sensitive detection of the saturated absorption signal in a He discharge cell. Any of the three transitions of the triplet system can be pumped with the laser but the maximum level of atomic polarization of 98.5% is found pumping the D 2 line. copyright 1995 American Institute of Physics

  20. Electrical characterization of Au/quercetin/n-Si heterojunction diode and optical analysis of quercetin thin film

    Energy Technology Data Exchange (ETDEWEB)

    Tombak, Ahmet, E-mail: tahmet@yahoo.com [Department of Physics, Faculty of Art& Science, Batman University, Batman 72000 (Turkey); Özaydin, C. [Department of Computer Engineering, Faculty of Engineering and Architecture, Batman University, Batman 72000 (Turkey); Boğa, M. [Faculty of Pharmacy, Pharmaceutical Technology Department, Dicle University, Diyarbakir 21280 (Turkey); Kiliçoğlu, T. [Department of Physics, Faculty of Science, Dicle University, Diyarbakir 21280 (Turkey)

    2016-03-25

    Quercetin (3,5,7,3’,4’-pentahydroxyflavone, QE), one of the most widely distributed flavonoids in fruits and vegetables, has been reported to possess a wide variety of biological effects, including anti-oxidative, anti-inflammatory, anti-apoptosis, hepatoprotective, renoprotective and neuroprotective effects. In this study organic-inorganic junctions were fabricated by forming quercetin complex thin film using spin coating technique on n-Si and evaporating Au metal on the film. Optical properties of quercetin thin film were studied with the help of spectrophotometer. The current-voltage (I-V) characteristic of Au/quercetin/n-Si heterojunction diode was investigated at room temperature in dark. Some basic parameters of the diode such as ideality factor, rectification ratio, barrier height, series resistance and shunt resistance were calculated using dark current-voltage measurement. It was also seen that the device had good sensitivity to the light under 40-100 mW/cm{sup 2} illumination conditions.

  1. 1550 nm superluminescent diode and anti-Stokes effect CCD camera based optical coherence tomography for full-field optical metrology

    Science.gov (United States)

    Kredzinski, Lukasz; Connelly, Michael J.

    2011-06-01

    Optical Coherence Tomography (OCT) is a promising non-invasive imaging technology capable of carrying out 3D high-resolution cross-sectional images of the internal microstructure of examined material. However, almost all of these systems are expensive, requiring the use of complex optical setups, expensive light sources and complicated scanning of the sample under test. In addition most of these systems have not taken advantage of the competitively priced optical components available at wavelength within the main optical communications band located in the 1550 nm region. A comparatively simple and inexpensive full-field OCT system (FF-OCT), based on a superluminescent diode (SLD) light source and anti-stokes imaging device was constructed, to perform 3D cross-sectional imaging. This kind of inexpensive setup with moderate resolution could be easily applicable in low-level biomedical and industrial diagnostics. This paper involves calibration of the system and determines its suitability for imaging structures of biological tissues such as teeth, which has low absorption at 1550 nm.

  2. Numerical analysis of the electrical and the optical properties of green phosphorescent organic light-emitting diodes

    International Nuclear Information System (INIS)

    Hwang, Young Wook; Lee, Hyeon Gi; Won, Tae Young

    2014-01-01

    In this paper, we report a theoretical study on the electrical-optical properties of phosphorescent organic light-emitting diodes (PHOLEDs). Our simulation reveals that the refractive index of each material plays a crucial role in the emission characteristics and that the barrier height at the interface significantly influences the behavior of charge transport as well as the generation of excitons. The calculated transient profiles indicate that the carrier recombination in the PHOLEDs takes place mainly at the interface between the emitting layer and the hole transport layer after 8 μs. In the case of high index of refraction, the simulation result via modal analysis implies a possibility for improving the light extraction by increasing the substrate mode. As the thickness of each layer has been altered, we observe that the chromaticity of the device changes periodically.

  3. Optical absorption of carbon nanotube diodes: Strength of the electronic transitions and sensitivity to the electric field polarization

    Science.gov (United States)

    Mencarelli, Davide; Pierantoni, Luca; Rozzi, Tullio

    2008-03-01

    Aim of this work is to model electrostatically doped carbon nanotubes (CNT), which have recently proved to perform as ideal PN diodes, also showing photovoltaic properties. The new model is able to predict the optical absorption of semiconducting CNT as function of size and chirality. We justify theoretically, for the first time, the experimentally observed capability of CNTs to detect and select not only a well defined set of frequencies, as resulting from their discrete band structure, but also the polarization of the incident radiation. The analysis develops from an approach proposed in a recent contribution. The periodic structure of CNTs is formally modeled as a photonic crystal, that is characterized by means of numerical simulators. Longitudinal and transverse components of the electric field are shown to excite distinct interband transitions between well defined energy levels. Equivalently, for a given energy of the incident radiation, absorption may show polarization ratios strongly exceeding unity.

  4. Curved adjustable fibre-optic diode laser in microscopic cholesteatoma surgery: description of use and review of the relevant literature.

    Science.gov (United States)

    McCaffer, C J; Pabla, L; Watson, C

    2018-04-01

    The use of lasers in cholesteatoma surgery is common and well accepted. The most commonly used laser fibres are straight and non-adjustable; these have several limitations. This paper describes the use of an alternative laser fibre. This 'How I Do It' paper describes and illustrates the use of an alternative curved adjustable fibre-optic diode laser in microscopic cholesteatoma surgery. The curved, adjustable laser fibre allows accurate and atraumatic disease removal when the use of a straight laser fibre may be less effective or accurate. It reduces potential damage to delicate structures without the need for extra drilling or bone removal. It is suggested that the curved adjustable laser fibre is superior to the traditional straight fibre for cholesteatoma surgery.

  5. Astigmatism and biometric optic components of diode laser-treated threshold retinopathy of prematurity at 9 years of age

    Science.gov (United States)

    Yang, C-S; Wang, A-G; Shih, Y-F; Hsu, W-M

    2013-01-01

    Purpose To assess the prevalence of astigmatism and its relationship with biometric optic components in preterm school children with diode laser-treated threshold retinopathy of prematurity (ROP). Methods A prospective, cross-sectional study in which cycloplegic keratometry, refraction, and ultrasound biometric measurement of optic components were performed on 24 consecutive preterm children with diode laser-treated threshold ROP at the age of 9 years. The study results were compared with data on 1021 age-matched full-term control children from a national survey. Results The laser-treated eyes had a mean astigmatism of 3.47 D, with a mean spherical equivalent of −4.49 D. Of the 46 eyes studied, 98% of eyes showed astigmatism ≥0.5 D and 50% had high astigmatism (>3.0 D). Most astigmatic eyes (97.7%) showed with-the-rule astigmatism, with the mean plus cylinder axis at 89.30o. Further correlation analysis showed the astigmatism in refraction was highly correlated with the corneal astigmatism (r=0.921, P<0.001) and the vertical corneal curvature (r=0.405, P=0.005). There was significantly steeper vertical corneal curvature (P=0.003) and flatter horizontal corneal curvature (P=0.031) in eyes with laser-treated ROP when compared with age-matched full-term controls. The eyes with laser-treated ROP also show significantly thicker lens (3.93 mm) and shallower anterior chamber depth (ACD; 2.92 mm) than full-term controls (P<0.001). Conclusions There is significantly higher prevalence and greater magnitude of astigmatism in eyes with laser-treated threshold ROP compared with full-term controls. The steeper vertical corneal curvature component contributes to the increased astigmatism in eyes with laser-treated ROP. PMID:23222565

  6. Characteristics of III-nitride based laser diode employed for short range underwater wireless optical communications

    Science.gov (United States)

    Xue, Bin; Liu, Zhe; Yang, Jie; Feng, Liangsen; Zhang, Ning; Wang, Junxi; Li, Jinmin

    2018-03-01

    An off-the-shelf green laser diode (LD) was measured to investigate its temperature dependent characteristics. Performance of the device was severely restricted by rising temperature in terms of increasing threshold current and decreasing modulation bandwidth. The observation reveals that dynamic characteristics of the LD is sensitive to temperature. Influence of light attenuation on the modulation bandwidth of the green LD was also studied. The impact of light attenuation on the modulation bandwidth of the LD in short and low turbid water channel was not obvious while slight difference in modulation bandwidth under same injection level was observed between water channel and free space even at short range.

  7. Narrow optical linewidths and spin pumping on charge-tunable close-to-surface self-assembled quantum dots in an ultrathin diode

    Science.gov (United States)

    Löbl, Matthias C.; Söllner, Immo; Javadi, Alisa; Pregnolato, Tommaso; Schott, Rüdiger; Midolo, Leonardo; Kuhlmann, Andreas V.; Stobbe, Søren; Wieck, Andreas D.; Lodahl, Peter; Ludwig, Arne; Warburton, Richard J.

    2017-10-01

    We demonstrate full charge control, narrow optical linewidths, and optical spin pumping on single self-assembled InGaAs quantum dots embedded in a 162.5 -nm -thin diode structure. The quantum dots are just 88 nm from the top GaAs surface. We design and realize a p -i -n -i -n diode that allows single-electron charging of the quantum dots at close-to-zero applied bias. In operation, the current flow through the device is extremely small resulting in low noise. In resonance fluorescence, we measure optical linewidths below 2 μ eV , just a factor of 2 above the transform limit. Clear optical spin pumping is observed in a magnetic field of 0.5 T in the Faraday geometry. We present this design as ideal for securing the advantages of self-assembled quantum dots—highly coherent single-photon generation, ultrafast optical spin manipulation—in the thin diodes required in quantum nanophotonics and nanophononics applications.

  8. Atrial electrogram quality in single-pass defibrillator leads with floating atrial bipole in patients with permanent atrial fibrillation and cardiac resynchronization therapy.

    Science.gov (United States)

    Sticherling, Christian; Müller, Dirk; Schaer, Beat A; Krüger, Silke; Kolb, Christof

    2018-03-27

    Many patients receiving cardiac resynchronization therapy (CRT) suffer from permanent atrial fibrillation (AF). Knowledge of the atrial rhythm is important to direct pharmacological or interventional treatment as well as maintaining AV-synchronous biventricular pacing if sinus rhythm can be restored. A single pass single-coil defibrillator lead with a floating atrial bipole has been shown to obtain reliable information about the atrial rhythm but has never been employed in a CRT-system. The purpose of this study was to assess the feasibility of implanting a single coil right ventricular ICD lead with a floating atrial bipole and the signal quality of atrial electrograms (AEGM) in CRT-defibrillator recipients with permanent AF. Seventeen patients (16 males, mean age 73 ± 6 years, mean EF 25 ± 5%) with permanent AF and an indication for CRT-defibrillator placement were implanted with a designated CRT-D system comprising a single pass defibrillator lead with a atrial floating bipole. They were followed-up for 103 ± 22 days using remote monitoring for AEGM transmission. All patients had at last one AEGM suitable for atrial rhythm diagnosis and of 100 AEGM 99% were suitable for visual atrial rhythm assessment. Four patients were discharged in sinus rhythm and one reverted to AF during follow-up. Atrial electrograms retrieved from a single-pass defibrillator lead with a floating atrial bipole can be reliably used for atrial rhythm diagnosis in CRT recipients with permanent AF. Hence, a single pass ventricular defibrillator lead with a floating bipole can be considered in this population. Copyright © 2018 Indian Heart Rhythm Society. Production and hosting by Elsevier B.V. All rights reserved.

  9. Cavity-enhanced Raman spectroscopy with optical feedback cw diode lasers for gas phase analysis and spectroscopy.

    Science.gov (United States)

    Salter, Robert; Chu, Johnny; Hippler, Michael

    2012-10-21

    A variant of cavity-enhanced Raman spectroscopy (CERS) is introduced, in which diode laser radiation at 635 nm is coupled into an external linear optical cavity composed of two highly reflective mirrors. Using optical feedback stabilisation, build-up of circulating laser power by 3 orders of magnitude occurs. Strong Raman signals are collected in forward scattering geometry. Gas phase CERS spectra of H(2), air, CH(4) and benzene are recorded to demonstrate the potential for analytical applications and fundamental molecular studies. Noise equivalent limits of detection in the ppm by volume range (1 bar sample) can be achieved with excellent linearity with a 10 mW excitation laser, with sensitivity increasing with laser power and integration time. The apparatus can be operated with battery powered components and can thus be very compact and portable. Possible applications include safety monitoring of hydrogen gas levels, isotope tracer studies (e.g., (14)N/(15)N ratios), observing isotopomers of hydrogen (e.g., radioactive tritium), and simultaneous multi-component gas analysis. CERS has the potential to become a standard method for sensitive gas phase Raman spectroscopy.

  10. Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

    Energy Technology Data Exchange (ETDEWEB)

    Hamad, H.; Raynaud, C.; Bevilacqua, P.; Tournier, D.; Planson, D. [Ampère Laboratory - UMR 5005, 21, Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Vergne, B. [Franco-Allemand Institute of Saint-Louis ISL, 5, Rue du Général Cassagnou, 68300 Saint-Louis (France)

    2014-02-24

    Using a pulsed green laser with a wavelength of 532 nm, a duration pulse of ∼1 ns, and a mean power varying between 1 and 100 mW, induced photocurrents have been measured in 4H-SiC bipolar diodes. Considering the photon energy (2.33 eV) and the bandgap of 4H-SiC (3.2 eV), the generation of electron-hole pair by the conventional single photon absorption process should be negligible. The intensity of the measured photocurrents depends quadratically on the power beam intensity. This clearly shows that they are generated using two-photon absorption process. As in conventional OBIC (Optical Beam Induced Current), the measurements give an image of the electric field distribution in the structure under test, and the minority carrier lifetime can be extracted from the decrease of the photocurrent at the edge of the structure. The extracted minority carrier lifetime of 210 ns is consistent with results obtained in case of single photon absorption.

  11. Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

    International Nuclear Information System (INIS)

    Hamad, H.; Raynaud, C.; Bevilacqua, P.; Tournier, D.; Planson, D.; Vergne, B.

    2014-01-01

    Using a pulsed green laser with a wavelength of 532 nm, a duration pulse of ∼1 ns, and a mean power varying between 1 and 100 mW, induced photocurrents have been measured in 4H-SiC bipolar diodes. Considering the photon energy (2.33 eV) and the bandgap of 4H-SiC (3.2 eV), the generation of electron-hole pair by the conventional single photon absorption process should be negligible. The intensity of the measured photocurrents depends quadratically on the power beam intensity. This clearly shows that they are generated using two-photon absorption process. As in conventional OBIC (Optical Beam Induced Current), the measurements give an image of the electric field distribution in the structure under test, and the minority carrier lifetime can be extracted from the decrease of the photocurrent at the edge of the structure. The extracted minority carrier lifetime of 210 ns is consistent with results obtained in case of single photon absorption

  12. Annealing effect on the electrical and optical properties of Au/n-ZnO NWs Schottky diodes white LEDs

    Science.gov (United States)

    Soomro, M. Y.; Hussain, I.; Bano, N.; Nur, O.; Willander, M.

    2013-10-01

    We report the post-growth heat treatment effect on the electrical and the optical properties of hydrothermally grown zinc oxide (ZnO) nanowires (NWs) Schottky white light emitting diodes (LEDs). It was found that there is a changed in the electroluminescence (EL) spectrum when post growth annealing process was performed at 600 °C under nitrogen, oxygen and argon ambients. The EL spectrum for LEDs based on the as grown NWs show three bands red, green and blue centered at 724, 518 and 450 nm respectively. All devices based on ZnO NWs annealed in oxygen (O2), nitrogen (N2) and argon (Ar) ambient show blue shift in the violet and the red emissions whereas a red shift is observed in the green emission compared to the as grown NWs based device. The color rendering index (CRI) and the correlated color temperature (CCT) of all LEDs were calculated to be in the range 78-91 and 2753-5122 K, respectively. These results indicate that light from the LEDs can be tuned from cold white light to warm white light by post growth annealing.

  13. Study of atmospheric air AC glow discharge using optical emission spectroscopy and near infrared diode laser cavity ringdown spectroscopy

    Science.gov (United States)

    Srivastava, Nimisha; Wang, Chuji; Dibble, Theodore S.

    2008-11-01

    AC glow discharges were generated in atmospheric pressure by applying high voltage AC in the range of 3500-15000 V to a pair of stainless steel electrodes separated by an air gap. The discharges were characterized by optical emission spectroscopy (OES) and continuous wave cavity ringdown spectroscopy (cw-CRDS). The electronic (Tex), vibrational (Tv), and rotational (Tr) temperatures were measured. Spectral stimulations of the emission spectra of several vibronic bands of the 2^nd positive system of N2, the 1^st negative system of N2^+, the (0,1,2,3-0) bands of NO (A-X), and the (0-0) band of OH (A-X), which were obtained under various plasma operating conditions, show that Tr, Tv, and Tex are in the ranges of 2000 - 3800, 3500 - 5000, and 6000 - 10500^ K, respectively. Emission spectra show that OH concentration increases while NO concentration decreases with an increase of electrode spacing. The absorption spectra of H2O and OH overtone in the near infrared (NIR) were measured by the cw-CRDS with a telecommunications diode laser at wavelength near 1515 nm.

  14. Nano-particle based scattering layers for optical efficiency enhancement of organic light-emitting diodes and organic solar cells

    Science.gov (United States)

    Chang, Hong-Wei; Lee, Jonghee; Hofmann, Simone; Hyun Kim, Yong; Müller-Meskamp, Lars; Lüssem, Björn; Wu, Chung-Chih; Leo, Karl; Gather, Malte C.

    2013-05-01

    The performance of both organic light-emitting diodes (OLEDs) and organic solar cells (OSC) depends on efficient coupling between optical far field modes and the emitting/absorbing region of the device. Current approaches towards OLEDs with efficient light-extraction often are limited to single-color emission or require expensive, non-standard substrates or top-down structuring, which reduces compatibility with large-area light sources. Here, we report on integrating solution-processed nano-particle based light-scattering films close to the active region of organic semiconductor devices. In OLEDs, these films efficiently extract light that would otherwise remain trapped in the device. Without additional external outcoupling structures, translucent white OLEDs containing these scattering films achieve luminous efficacies of 46 lm W-1 and external quantum efficiencies of 33% (both at 1000 cd m-2). These are by far the highest numbers ever reported for translucent white OLEDs and the best values in the open literature for any white device on a conventional substrate. By applying additional light-extraction structures, 62 lm W-1 and 46% EQE are reached. Besides universally enhancing light-extraction in various OLED configurations, including flexible, translucent, single-color, and white OLEDs, the nano-particle scattering film boosts the short-circuit current density in translucent organic solar cells by up to 70%.

  15. Optical gain in GaAsBi-based quantum-well diode lasers (Conference Presentation)

    Science.gov (United States)

    Marko, Igor P.; Broderick, Christopher A.; Jin, Shirong; Ludewig, Peter; Stolz, Wolfgang; Volz, Kerstin; Rorison, Judy M.; O'Reilly, Eoin P.; Sweeney, Stephen J.

    2017-02-01

    GaAsBi offers the possibility to develop near-IR semiconductor lasers such that the spin-orbit-split-off energy (ΔSO) is greater than the bandgap (Eg) in the active region with lasing wavelengths in the datacom/telecom range of 1.3-1.6 μm. This promises to suppress the dominant efficiency-limiting loss processes as Auger recombination, involving the generation of "hot" holes in the spin-orbit split-off band (the so-called "CHSH" process), and inter-valence band absorption (IVBA), where emitted photons are re-absorbed in the active region, thereby increasing the internal optical losses and negatively impacting upon the laser characteristics being responsible for the main energy consumption. In addition to growth and fabrication processes refinement, a key aspect of efforts to continue the advancement of the GaAsBi material system for laser applications is to develop a quantitative understanding of the impact of Bi on key device parameters. In this work, we present the first experimental measurements of the absorption, spontaneous emission, and optical gain spectra of GaAsBi/AlGaAs QW lasers using a segmented contact method and a theoretical analysis of these devices, which shows good quantitative agreement with the experiment. Internal optical losses of 10-15 cm-1 and peak modal gain of 24 cm-1 are measured at threshold and a peak material gain is estimated to be 1500 cm-1 at current density of 2 kA/cm-2, which agrees well with the calculated value of 1560 cm-1. The theoretical calculations also enabled us to identify and quantify Bi composition variations across the wafer and Bi-induced inhomogeneous broadening of the optical spectra.

  16. Numerical simulation of optical and electronic properties for multilayer organic light-emitting diodes and its application in engineering education

    Science.gov (United States)

    Chang, Shu-Hsuan; Chang, Yung-Cheng; Yang, Cheng-Hong; Chen, Jun-Rong; Kuo, Yen-Kuang

    2006-02-01

    Organic light-emitting diodes (OLEDs) have been extensively developed in the past few years. The OLED displays have advantages over other displays, such as CRT, LCD, and PDP in thickness, weight, brightness, response time, viewing angle, contrast, driving power, flexibility, and capability of self-emission. In this work, the optical and electronic properties of multilayer OLED devices are numerically studied with an APSYS (Advanced Physical Model of Semiconductor Devices) simulation program. Specifically, the emission and absorption spectra of the Alq 3, DCM, PBD, and SA light-emitting layers, and energy band diagrams, electron-hole recombination rates, and current-voltage characteristics of the simulated OLED devices, typically with a multilayer structure of metal/Alq 3/EML/TPD/ITO constructed by Lim et al., are investigated and compared to the experimental results. The physical models utilized in this work are similar to those presented by Ruhstaller et al. and Hoffmann et al. The simulated results indicate that the emission spectra of the Alq 3, DCM, PBD, and SA light-emitting layers obtained in this study are in good agreement with those obtained experimentally by Zugang et al. Optimization of the optical and electronic performance of the multilayer OLED devices are attempted. In order to further promote the research results, the whole numerical simulation process for optimizing the design of OLED devices has been applied to a project-based course of OLED device design to enhance the students' skills in photonics device design at the Graduate Institute of Photonics of National Changhua University of Education in Taiwan. In the meantime, the effectiveness of the course has been proved by various assessments. The application of the results is a useful point of reference for the research on photonics device design and engineering education. Therefore, it proffers a synthetic effect between innovation and practical application.

  17. Demonstration of optical rogue waves using a laser diode emitting at 980  nm and a fiber Bragg grating.

    Science.gov (United States)

    Lee, Min Won; Baladi, Fadwa; Burie, Jean-René; Bettiati, Mauro A; Boudrioua, Azzedine; Fischer, Alexis P A

    2016-10-01

    Rogue waves are observed for the first time, to the best of our knowledge, in a 980 nm laser diode subject to filtered optical feedback via a fiber Bragg grating. By counting the number of rogue waves in a fixed time window, a rogue wave map is established experimentally as a function of both the optical feedback ratio and the laser current. The comparison with low frequency fluctuations (LFFs) reveals that the rogue waves observed in our system are, in fact, LFF jump-ups.

  18. Strong doping of the n-optical confinement layer for increasing output power of high- power pulsed laser diodes in the eye safe wavelength range

    Science.gov (United States)

    Ryvkin, Boris S.; Avrutin, Eugene A.; Kostamovaara, Juha T.

    2017-12-01

    An analytical model for internal optical losses at high power in a 1.5 μm laser diode with strong n-doping in the n-side of the optical confinement layer is created. The model includes intervalence band absorption by holes supplied by both current flow and two-photon absorption (TPA), as well as the direct TPA effect. The resulting losses are compared with those in an identical structure with a weakly doped waveguide, and shown to be substantially lower, resulting in a significant improvement in the output power and efficiency in the structure with a strongly doped waveguide.

  19. Thermally induced optical deformation of a Nd:YVO4 active disk under the action of multi-beam spatially periodic diode pumping

    Science.gov (United States)

    Guryev, D. A.; Nikolaev, D. A.; Tsvetkov, V. B.; Shcherbakov, I. A.

    2018-05-01

    A study of how the transverse distribution of an optical path changes in a Nd:YVO4 active disk was carried out in a ten-beam spatially periodic diode pumping in the one-dimensional case. The pumping beams’ transverse dimensions were comparable with the distances between them. The investigations were carried out using laser interferometry methods. It was found that the optical thickness changing in the active disk along the line of pumping spots was well described by a Gaussian function.

  20. A Tunable CW Orange Laser Based on a Cascaded MgO:PPLN Single-Pass Sum-Frequency Generation Module

    OpenAIRE

    Dismas K. Choge; Huai-Xi Chen; Bao-Lu Tian; Yi-Bin Xu; Guang-Wei Li; Wan-Guo Liang

    2018-01-01

    We report an all-solid-state continuous wave (CW) tunable orange laser based on cascaded single-pass sum-frequency generation with fundamental wavelengths at 1545.7 and 975.2 nm using two quasi-phase-matched (QPM) MgO-doped periodically poled lithium niobate (MgO:PPLN) crystals. Up to 10 mW of orange laser is generated in the cascaded module corresponding to a 10.4%/W nonlinear conversion efficiency. The orange output showed a temperature tuning rate of ~0.05 nm/°C, and the beam quality (M2) ...

  1. Comparison of the gravimetric, phenol red, and 14C-PEG-3350 methods to determine water absorption in the rat single-pass intestinal perfusion model

    OpenAIRE

    Sutton, Steven C.; Rinaldi, M. T. S.; Vukovinsky, K. E.

    2001-01-01

    This study was undertaken to determine whether the gravimetric method provided an accurate measure of water flux correction and to compare the gravimetric method with methods that employ nonabsorbed markers (eg, phenol red and 14C-PEG-3350). Phenol red, 14C-PEG-3350, and 4-[2-[[2-(6-amino-3-pyridinyl)-2-hydroxyethyl]amino]ethoxy]-methyl ester, (R)-benzene acetic acid (Compound I) were co-perfused in situ through the jejunum of 9 anesthetized rats (single-pass intestinal perfusion [SPIP]). Wat...

  2. Laser Diode Beam Basics, Manipulations and Characterizations

    CERN Document Server

    Sun, Haiyin

    2012-01-01

    Many optical design technical books are available for many years which mainly deal with image optics design based on geometric optics and using sequential raytracing technique. Some books slightly touched laser beam manipulation optics design. On the other hand many books on laser diodes have been published that extensively deal with laser diode physics with little touching on laser diode beam manipulations and characterizations. There are some internet resources dealing with laser diode beams. However, these internet resources have not covered enough materials with enough details on laser diode beam manipulations and characterizations. A technical book concentrated on laser diode beam manipulations and characterizations can fit in to the open and provide useful information to laser diode users. Laser Diode Beam Basics, Manipulations and  Characterizations is concentrated on the very practical side of the subject, it only discusses the basic physics and mathematics that are necessary for the readers in order...

  3. A Unified Algorithm for Channel Imbalance and Antenna Phase Center Position Calibration of a Single-Pass Multi-Baseline TomoSAR System

    Directory of Open Access Journals (Sweden)

    Yuncheng Bu

    2018-03-01

    Full Text Available The multi-baseline synthetic aperture radar (SAR tomography (TomoSAR system is employed in such applications as disaster remote sensing, urban 3-D reconstruction, and forest carbon storage estimation. This is because of its 3-D imaging capability in a single-pass platform. However, a high 3-D resolution of TomoSAR is based on the premise that the channel imbalance and antenna phase center (APC position are precisely known. If this is not the case, the 3-D resolution performance will be seriously degraded. In this paper, a unified algorithm for channel imbalance and APC position calibration of a single-pass multi-baseline TomoSAR system is proposed. Based on the maximum likelihood method, as well as the least squares and the damped Newton method, we can calibrate the channel imbalance and APC position. The algorithm is suitable for near-field conditions, and no phase unwrapping operation is required. The effectiveness of the proposed algorithm has been verified by simulation and experimental results.

  4. Beam shaping for multicolour light-emitting diodes with diffractive optical elements

    KAUST Repository

    Yu, Chao

    2016-10-06

    An improved particle swarm optimization method is proposed for the design of ultra-thin diffractive optical elements (DOEs) enabling multicolour beam shaping functionality. We employ pre-optimized initial structures and adaptive weight strategy in the algorithm to achieve better and identical shaping performance for multiple colours. Accordingly, a DOE for shaping light from green and blue LEDs has been designed and fabricated. Both experiment and numerical simulations have been conducted and the results agree well with each other. 15.66% average root mean square error (RMSE) and 0.22% RMSE difference are achieved. In addition, the parameters closely related to the performance of the optimization are analysed, which can provide insights for future application designs.

  5. Dependence of plasma treatment of ITO electrode films on electrical and optical properties of polymer light-emitting diodes

    International Nuclear Information System (INIS)

    Kim, Seung Ho; Baek, Seung Jun; Chang, Ho Jung; Chang, Young Chul

    2012-01-01

    Polymer light-emitting diodes (PLEDs) having indium tin oxide (ITO)/PEDOT:PSS [poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate]/PVK [poly-vinylcarbazole]:PFO-poss [poly(9,9-dioctylfluorene) end capped by polyhedral oligomeric silsesquioxane]/TPBI [2,2',2''-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)]/LiF/Al structures were prepared on plasma-treated ITO/glass substrates using spin-coating and thermal evaporation methods. The effects of the plasma treatment on the ITO films to the optical and electrical properties of the PLEDs were examined. The sheet resistance of the ITO films decreased with an increasing radio frequency (RF) plasma intensity from 20 to 200 W under a 20 mTorr Ar + O 2 gas (50:50 vol.%) pressure. The work function of the ITO films without plasma treatment was 4.97 eV, and increased to about 5.16-5.23 eV after the plasma treatment of the films. The surface roughness improved with increasing plasma intensities. The luminance and current efficiency of the PLEDs were improved when the devices were prepared on the plasma-treated ITO/glass substrates. The maximum current density and luminance for the PLEDs was obtained at a 150-W RF plasma intensity; they were 310 mA cm -2 and 2535 cd m -2 at 9 V, respectively. The Commission Internationale d'Eclairage (CIE) color coordinates were found to be x, y = 0.17, 0.06-0.07, showing a good blue color. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  6. 1-W quasi-cw near-diffraction-limited semiconductor laser pumped optically by a fibre-coupled diode bar

    OpenAIRE

    Dhanjal, S.; Hoogland, S.; Roberts, J.S.; Hayward, R.A.; Clarkson, W.A.; Tropper, Anne

    2000-01-01

    We describe a diode-bar-pumped vertical-external-cavity surface-emitting semiconductor laser, which in quasi-cw operation emitted a peak power of >1 W at 1020 nm in a circular, near diffraction-limited beam.

  7. Improvement of optical and electrical properties of indium tin oxide layer of GaN-based light-emitting diode by surface plasmon in silver nanoparticles

    International Nuclear Information System (INIS)

    Cho, Chu-Young; Hong, Sang-Hyun; Park, Seong-Ju

    2015-01-01

    We report on the effect of silver (Ag) nanoparticles on the optical transmittance and electrical conductivity of indium tin oxide (ITO) transparent conducting layer deposited on p-GaN layer of light-emitting diodes (LEDs). The sheet resistance of ITO and the series resistance of LEDs were decreased due to the increased electrical conductivity of ITO by Ag nanoparticles, compared with those of the LEDs with a bare ITO only. The ITO transmittance was also improved by localized surface plasmon resonance between the incident light and the randomly distributed Ag nanoparticles on ITO. The optical output power of LEDs with Ag nanoparticles on ITO was increased by 16% at 20 mA of injection current. - Highlights: • We studied the effect of Ag nanoparticles deposited on ITO on the properties of LED. • The optical power of LED and transmittance of ITO were improved by Ag surface plasmon. • The electrical conductivity of ITO was increased by Ag nanoparticles

  8. Optimisation of the parameters of a pump chamber for solid-state lasers with diode pumping by the optical boiler method

    Energy Technology Data Exchange (ETDEWEB)

    Kiyko, V V; Kislov, V I; Ofitserov, E N; Suzdal' tsev, A G [A M Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

    2015-06-30

    A pump chamber of the optical boiler type for solid-state lasers with transverse laser diode pumping is studied theoretically and experimentally. The pump chamber parameters are optimised using the geometrical optics approximation for the pump radiation. According to calculations, the integral absorption coefficient of the active element at a wavelength of 808 nm is 0.75 – 0.8 and the relative inhomogeneity of the pump radiation distribution over the active element volume is 17% – 19%. The developed pump chamber was used in a Nd:YAG laser. The maximum cw output power at a wavelength of 1064 nm was ∼480 W at the optical efficiency up to 19.6%, which agrees with theoretical estimates. (lasers)

  9. Performance of a Distributed Simultaneous Strain and Temperature Sensor Based on a Fabry-Perot Laser Diode and a Dual-Stage FBG Optical Demultiplexer

    Directory of Open Access Journals (Sweden)

    Shinwon Kang

    2013-11-01

    Full Text Available A simultaneous strain and temperature measurement method using a Fabry-Perot laser diode (FP-LD and a dual-stage fiber Bragg grating (FBG optical demultiplexer was applied to a distributed sensor system based on Brillouin optical time domain reflectometry (BOTDR. By using a Kalman filter, we improved the performance of the FP-LD based OTDR, and decreased the noise using the dual-stage FBG optical demultiplexer. Applying the two developed components to the BOTDR system and using a temperature compensating algorithm, we successfully demonstrated the simultaneous measurement of strain and temperature distributions under various experimental conditions. The observed errors in the temperature and strain measured using the developed sensing system were 0.6 °C and 50 με, and the spatial resolution was 1 m, respectively.

  10. Performance of a distributed simultaneous strain and temperature sensor based on a Fabry-Perot laser diode and a dual-stage FBG optical demultiplexer.

    Science.gov (United States)

    Kim, Suhwan; Kwon, Hyungwoo; Yang, Injae; Lee, Seungho; Kim, Jeehyun; Kang, Shinwon

    2013-11-12

    A simultaneous strain and temperature measurement method using a Fabry-Perot laser diode (FP-LD) and a dual-stage fiber Bragg grating (FBG) optical demultiplexer was applied to a distributed sensor system based on Brillouin optical time domain reflectometry (BOTDR). By using a Kalman filter, we improved the performance of the FP-LD based OTDR, and decreased the noise using the dual-stage FBG optical demultiplexer. Applying the two developed components to the BOTDR system and using a temperature compensating algorithm, we successfully demonstrated the simultaneous measurement of strain and temperature distributions under various experimental conditions. The observed errors in the temperature and strain measured using the developed sensing system were 0.6 °C and 50 με, and the spatial resolution was 1 m, respectively.

  11. Single-pass, efficient type-I phase-matched frequency doubling of high-power ultrashort-pulse Yb-fiber laser using LiB_3O_5

    Science.gov (United States)

    Shukla, Mukesh Kumar; Kumar, Samir; Das, Ritwick

    2016-05-01

    We report 48 % efficient single-pass second harmonic generation of high-power ultrashort-pulse ({≈ }250 fs) Yb-fiber laser by utilizing type-I phase matching in LiB_3O_5 (LBO) crystal. The choice of LBO among other borate crystals for high-power frequency doubling is essentially motivated by large thermal conductivity, low birefringence and weak group velocity dispersion. By optimally focussing the beam in a 4-mm-long LBO crystal, we have generated about 2.3 W of average power at 532 nm using 4.8 W of available pump power at 1064 nm. The ultrashort green pulses were found out to be near-transform limited sech^2 pulses with a pulse width of Δ τ ≈ 150 fs and being delivered at 78 MHz repetition rate. Due to appreciably low spatial walk-off angle for LBO ({≈ }0.4°), we obtain M^2beam which signifies marginal distortion in comparison with the pump beam (M^2<1.15). We also discuss the impact of third-order optical nonlinearity of the LBO crystal on the generated ultrashort SH pulses.

  12. Optical design and fabrication of palm/fingerprint uniform illumination system with a high-power near-infrared light-emitting diode.

    Science.gov (United States)

    Jing, Lei; Wang, Yao; Zhao, Huifu; Ke, Hongliang; Wang, Xiaoxun; Gao, Qun

    2017-06-10

    In order to meet the requirements of uniform illumination for optical palm/fingerprint instruments and overcome the shortcomings of the poor uniform illumination on the working plane of the optical palm/fingerprint prism, a novel secondary optical lens with a free-form surface, compact structure, and high uniformity is presented in this paper. The design of the secondary optical lens is based on emission properties of the near-infrared light-emitting diode (LED) and basic principles of non-imaging optics, especially considering the impact of the thickness of the prism in the design. Through the numerical solution of Snell's law in geometric optics, we obtain the profile of the free-form surface of the lens. Using the optical software TracePro, we trace and simulate the illumination system. The results show that the uniformity is 89.8% on the working plane of the prism, and the test results show that the actual uniformity reaches 85.7% in the experiment, which provides an effective way for realizing a highly uniform illumination system with high-power near-infrared LED.

  13. N-isopropyl-[123I]p-iodoamphetamine: single-pass brain uptake and washout; binding to brain synaptosomes; and localization in dog and monkey brain

    International Nuclear Information System (INIS)

    Winchell, H.S.; Horst, W.D.; Braun, L.; Oldendorf, W.H.; Hattner, R.; Parker, H.

    1980-01-01

    The kinetics of N-isopropyl-p-[ 123 I]iodoamphetamine in rat brains were determined by serial measurements of brain uptake index (BUI) after intracarotid injection; also studied were its effects on amine uptake and release in rat's brain cortical synaptosomes; and its in vivo distribution in the dog and monkey. No specific localization in brain nuclei of the dog was seen, but there was progressive accumulation in the eyes. Rapid initial brain uptake in the ketamine-sedated monkey was noted, and further slow brain uptake occurred during the next 20 min but without retinal localization. High levels of brain activity were maintained for several hours. The quantitative initial single-pass clearance of the agent in the brain suggests its use in evaluation of regional brain perfusion. Its interaction with brain amine-binding sites suggests its possible application in studies of cerebral amine metabolism

  14. Continuous-wave sodium D2 resonance radiation generated in single-pass sum-frequency generation with periodically poled lithium niobate.

    Science.gov (United States)

    Yue, J; She, C-Y; Williams, B P; Vance, J D; Acott, P E; Kawahara, T D

    2009-04-01

    With two cw single-mode Nd:YAG lasers at 1064 and 1319 nm and a periodically poled lithium niobate crystal, 11 mW of 2 kHz/100 ms bandwidth single-mode tunable 589 nm cw radiation has been detected using single-pass sum-frequency generation. The demonstrated conversion efficiency is approximately 3.2%[W(-1) cm(-1)]. This compact solid-state light source has been used in a solid-state-dye laser hybrid sodium fluorescence lidar transmitter to measure temperatures and winds in the upper atmosphere (80-105 km); it is being implemented into the transmitter of a mobile all-solid-state sodium temperature and wind lidar under construction.

  15. Deformational Features and Microstructure Evolution of Copper Fabricated by a Single Pass of the Elliptical Cross-Section Spiral Equal-Channel Extrusion (ECSEE) Process

    Science.gov (United States)

    Wang, Chengpeng; Li, Fuguo; Liu, Juncheng

    2018-04-01

    The objectives of this work are to study the deformational feature, textures, microstructures, and dislocation configurations of ultrafine-grained copper processed by the process of elliptical cross-section spiral equal-channel extrusion (ECSEE). The deformation patterns of simple shear and pure shear in the ECSEE process were evaluated with the analytical method of geometric strain. The influence of the main technical parameters of ECSEE die on the effective strain distribution on the surface of ECSEE-fabricated samples was examined by the finite element simulation. The high friction factor could improve the effective strain accumulation of material deformation. Moreover, the pure copper sample fabricated by ECSEE ion shows a strong rotated cube shear texture. The refining mechanism of the dislocation deformation is dominant in copper processed by a single pass of ECSEE. The inhomogeneity of the micro-hardness distribution on the longitudinal section of the ECSEE-fabricated sample is consistent with the strain and microstructure distribution features.

  16. Direct correlations of structural and optical properties of three-dimensional GaN/InGaN core/shell micro-light emitting diodes

    Science.gov (United States)

    Sadat Mohajerani, Matin; Müller, Marcus; Hartmann, Jana; Zhou, Hao; Wehmann, Hergo-H.; Veit, Peter; Bertram, Frank; Christen, Jürgen; Waag, Andreas

    2016-05-01

    Three-dimensional (3D) InGaN/GaN quantum-well (QW) core-shell light emitting diodes (LEDs) are a promising candidate for the future solid state lighting. In this contribution, we study direct correlations of structural and optical properties of the core-shell LEDs using highly spatially-resolved cathodoluminescence spectroscopy (CL) in combination with scanning electron microscopy (SEM) and scanning transmission electron microscopy (STEM). Temperature-dependent resonant photoluminescence (PL) spectroscopy has been performed to understand recombination mechanisms and to estimate the internal quantum efficiency (IQE).

  17. A compact spin-exchange optical pumping system for 3He polarization based on a solenoid coil, a VBG laser diode, and a cosine theta RF coil

    Science.gov (United States)

    Lee, Sungman; Kim, Jongyul; Moon, Myung Kook; Lee, Kye Hong; Lee, Seung Wook; Ino, Takashi; Skoy, Vadim R.; Lee, Manwoo; Kim, Guinyun

    2013-02-01

    For use as a neutron spin polarizer or analyzer in the neutron beam lines of the HANARO (High-flux Advanced Neutron Application ReactOr) nuclear research reactor, a 3He polarizer was designed based on both a compact solenoid coil and a VBG (volume Bragg grating) diode laser with a narrow spectral linewidth of 25 GHz. The nuclear magnetic resonance (NMR) signal was measured and analyzed using both a built-in cosine radio-frequency (RF) coil and a pick-up coil. Using a neutron transmission measurement, we estimated the polarization ratio of the 3He cell as 18% for an optical pumping time of 8 hours.

  18. Enhanced optical output of InGaN/GaN near-ultraviolet light-emitting diodes by localized surface plasmon of colloidal silver nanoparticles

    International Nuclear Information System (INIS)

    Hong, Sang-Hyun; Kim, Jae-Joon; Jung, Yen-Sook; Kim, Dong-Yu; Park, Seong-Ju; Kang, Jang-Won; Yim, Sang-Youp

    2015-01-01

    We report on the characteristics of localized surface plasmon (LSP)-enhanced near-ultraviolet light-emitting diodes (NUV-LEDs) fabricated by using colloidal silver (Ag) nanoparticles (NPs). Colloidal Ag NPs were deposited on the 20 nm thick p-GaN spacer layer using a spray process. The optical output power of NUV-LEDs with colloidal Ag NPs was increased by 48.7% at 20 mA compared with NUV-LEDs without colloidal Ag NPs. The enhancement was attributed to increased internal quantum efficiency caused by the resonance coupling between excitons in the multiple quantum wells and the LSPs in the Ag NPs. (paper)

  19. Laser diode technology for coherent communications

    Science.gov (United States)

    Channin, D. J.; Palfrey, S. L.; Toda, M.

    1989-01-01

    The effect of diode laser characteristics on the overall performance capabilities of coherent communication systems is discussed. In particular, attention is given to optical performance issues for diode lasers in coherent systems, measurements of key performance parameters, and optical requirements for coherent single-channel and multichannel communication systems. The discussion also covers limitations imposed by diode laser optical performance on multichannel system capabilities and implications for future developments.

  20. Theoretical simulations of protective thin film Fabry-Pérot filters for integrated optical elements of diode pumped alkali lasers (DPAL

    Directory of Open Access Journals (Sweden)

    L. Quarrie

    2014-09-01

    Full Text Available The lifetime of Diode-Pumped Alkali Lasers (DPALs is limited by damage initiated by reaction of the glass envelope of its gain medium with rubidium vapor. Rubidium is absorbed into the glass and the rubidium cations diffuse through the glass structure, breaking bridging Si-O bonds. A damage-resistant thin film was developed enhancing high-optical transmission at natural rubidium resonance input and output laser beam wavelengths of 780 nm and 795 nm, while protecting the optical windows of the gain cell in a DPAL. The methodology developed here can be readily modified for simulation of expected transmission performance at input pump and output laser wavelengths using different combination of thin film materials in a DPAL. High coupling efficiency of the light through the gas cell was accomplished by matching the air-glass and glass-gas interfaces at the appropriate wavelengths using a dielectric stack of high and low index of refraction materials selected to work at the laser energies and protected from the alkali metal vapor in the gain cell. Thin films as oxides of aluminum, zirconium, tantalum, and silicon were selected allowing the creation of Fabry-Perot optical filters on the optical windows achieving close to 100% laser transmission in a solid optic combination of window and highly reflective mirror. This approach allows for the development of a new whole solid optic laser.

  1. Organic Light-Emitting Diodes (OLEDs) and Optically-Detected Magnetic Resonance (ODMR) studies on organic materials

    Energy Technology Data Exchange (ETDEWEB)

    Cai, Min [Iowa State Univ., Ames, IA (United States)

    2011-01-01

    Organic semiconductors have evolved rapidly over the last decades and currently are considered as the next-generation technology for many applications, such as organic light-emitting diodes (OLEDs) in flat-panel displays (FPDs) and solid state lighting (SSL), and organic solar cells (OSCs) in clean renewable energy. This dissertation focuses mainly on OLEDs. Although the commercialization of the OLED technology in FPDs is growing and appears to be just around the corner for SSL, there are still several key issues that need to be addressed: (1) the cost of OLEDs is very high, largely due to the costly current manufacturing process; (2) the efficiency of OLEDs needs to be improved. This is vital to the success of OLEDs in the FPD and SSL industries; (3) the lifetime of OLEDs, especially blue OLEDs, is the biggest technical challenge. All these issues raise the demand for new organic materials, new device structures, and continued lower-cost fabrication methods. In an attempt to address these issues, we used solution-processing methods to fabricate highly efficient small molecule OLEDs (SMOLEDs); this approach is costeffective in comparison to the more common thermal vacuum evaporation. We also successfully made efficient indium tin oxide (ITO)-free SMOLEDs to further improve the efficiency of the OLEDs. We employed the spin-dependent optically-detected magnetic resonance (ODMR) technique to study the luminescence quenching processes in OLEDs and organic materials in order to understand the intrinsic degradation mechanisms. We also fabricated polymer LEDs (PLEDs) based on a new electron-accepting blue-emitting polymer and studied the effect of molecular weight on the efficiency of PLEDs. All these studies helped us to better understand the underlying relationship between the organic semiconductor materials and the OLEDs’ performance, and will subsequently assist in further enhancing the efficiency of OLEDs. With strongly improved device performance (in addition to

  2. Optoacoustic response from graphene-based solutions embedded in optical phantoms by using 905-nm high-power diode-laser assemblies

    Science.gov (United States)

    Leggio, Luca; Gallego, Daniel C.; Gawali, Sandeep Babu; Dadrasnia, Ehsan; Sánchez, Miguel; Rodríguez, Sergio; González, Marta; Carpintero, Guillermo; Osiński, Marek; Lamela, Horacio

    2016-03-01

    During the last two decades, optoacoustic imaging has been developed as a novel biomedical imaging technique based on the generation of ultrasound waves by means of laser light. In this work, we investigate the optoacoustic response from graphene-based solutions by using a compact and cost-effective system based on an assembly of several 905-nm pulsed high-power diode lasers coupled to a bundle of 200-μm diameter- core optical fibers. The coupled light is conveyed into a lens system and focused on an absorber consisting of graphene-based nanomaterials (graphene oxide, reduced graphene oxide, and reduced graphene-oxide/gold-nanoparticle hybrid, respectively) diluted in ethanol and hosted in slightly scattering optical phantoms. The high absorption of these graphene-based solutions suggests their potential future use in optoacoustic applications as contrast agents.

  3. Optical sensing system based on wireless paired emitter detector diode device and ionogels for lab-on-a-disc water quality analysis.

    Science.gov (United States)

    Czugala, Monika; Gorkin, Robert; Phelan, Thomas; Gaughran, Jennifer; Curto, Vincenzo Fabio; Ducrée, Jens; Diamond, Dermot; Benito-Lopez, Fernando

    2012-12-07

    This work describes the first use of a wireless paired emitter detector diode device (PEDD) as an optical sensor for water quality monitoring in a lab-on-a-disc device. The microfluidic platform, based on an ionogel sensing area combined with a low-cost optical sensor, is applied for quantitative pH and qualitative turbidity monitoring of water samples at point-of-need. The autonomous capabilities of the PEDD system, combined with the portability and wireless communication of the full device, provide the flexibility needed for on-site water testing. Water samples from local fresh and brackish sources were successfully analysed using the device, showing very good correlation with standard bench-top systems.

  4. Enhanced optical output power of InGaN/GaN light-emitting diodes grown on a silicon (111) substrate with a nanoporous GaN layer.

    Science.gov (United States)

    Lee, Kwang Jae; Chun, Jaeyi; Kim, Sang-Jo; Oh, Semi; Ha, Chang-Soo; Park, Jung-Won; Lee, Seung-Jae; Song, Jae-Chul; Baek, Jong Hyeob; Park, Seong-Ju

    2016-03-07

    We report the growth of InGaN/GaN multiple quantum wells blue light-emitting diodes (LEDs) on a silicon (111) substrate with an embedded nanoporous (NP) GaN layer. The NP GaN layer is fabricated by electrochemical etching of n-type GaN on the silicon substrate. The crystalline quality of crack-free GaN grown on the NP GaN layer is remarkably improved and the residual tensile stress is also decreased. The optical output power is increased by 120% at an injection current of 20 mA compared with that of conventional LEDs without a NP GaN layer. The large enhancement of optical output power is attributed to the reduction of threading dislocation, effective scattering of light in the LED, and the suppression of light propagation into the silicon substrate by the NP GaN layer.

  5. Theoretical and experimental study of a laser-diode-pumped actively Q-switched Yb:NaY(WO4)2 laser with acoustic-optic modulator

    Science.gov (United States)

    Zhang, Haikun; Xia, Wei; Song, Peng; Wang, Jing; Li, Xin

    2018-03-01

    A laser-diode-pumped actively Q-switched Yb:NaY(WO4)2 laser operating at around 1040 nm is presented for the first time with acoustic-optic modulator. The dependence of pulse width on incident pump power for different pulse repetition rates is measured. By considering the Guassian spatial distribution of the intracavity photon density and the initial population-inversion density as well as the longitudinal distribution of the photon density along the cavity axis and the turn off time of the acoustic-optic Q-switch, the coupled equations of the actively Q-switched Yb:NaY(WO4)2 laser are given. The coupled rate equations are used to simulate the Q-switched process of laser, and the numerical solutions agree with the experimental results.

  6. Cavity-enhanced resonant photoacoustic spectroscopy with optical feedback cw diode lasers: A novel technique for ultratrace gas analysis and high-resolution spectroscopy.

    Science.gov (United States)

    Hippler, Michael; Mohr, Christian; Keen, Katherine A; McNaghten, Edward D

    2010-07-28

    Cavity-enhanced resonant photoacoustic spectroscopy with optical feedback cw diode lasers (OF-CERPAS) is introduced as a novel technique for ultratrace gas analysis and high-resolution spectroscopy. In the scheme, a single-mode cw diode laser (3 mW, 635 nm) is coupled into a high-finesse linear cavity and stabilized to the cavity by optical feedback. Inside the cavity, a build-up of laser power to at least 2.5 W occurs. Absorbing gas phase species inside the cavity are detected with high sensitivity by the photoacoustic effect using a microphone embedded in the cavity. To increase sensitivity further, coupling into the cavity is modulated at a frequency corresponding to a longitudinal resonance of an organ pipe acoustic resonator (f=1.35 kHz and Q approximately 10). The technique has been characterized by measuring very weak water overtone transitions near 635 nm. Normalized noise-equivalent absorption coefficients are determined as alpha approximately 4.4x10(-9) cm(-1) s(1/2) (1 s integration time) and 2.6x10(-11) cm(-1) s(1/2) W (1 s integration time and 1 W laser power). These sensitivities compare favorably with existing state-of-the-art techniques. As an advantage, OF-CERPAS is a "zero-background" method which increases selectivity and sensitivity, and its sensitivity scales with laser power.

  7. Silicon MIS diodes with Cr{sub 2}O{sub 3} nanofilm: Optical, morphological/structural and electronic transport properties

    Energy Technology Data Exchange (ETDEWEB)

    Erdogan, Ibrahim Y. [Bingoel University, Faculty of Sciences and Arts, Department of Chemistry, 12000- Bingoel (Turkey); Guellue, O., E-mail: omergullu@gmail.com [Batman University, Faculty of Sciences and Arts, Department of Physics, 72060- Batman (Turkey)

    2010-04-15

    In this work we report the optical, morphological and structural characterization and diode application of Cr{sub 2}O{sub 3} nanofilms grown on p-Si substrates by spin coating and annealing process. X-ray diffraction (XRD), non-contact mode atomic force microscopy (NC-AFM), ultraviolet-visible (UV-vis) spectroscopy and photoluminescence (PL) spectroscopy were used for characterization of nanofilms. For Cr{sub 2}O{sub 3} nanofilms, the average particle size determined from XRD and NC-AFM measurements was approximately 70 nm. Structure analyses of nanofilms demonstrate that the single phase Cr{sub 2}O{sub 3} on silicon substrate is of high a crystalline structure with a dominant in hexagonal (1 1 0) orientation. The morphologic analysis of the films indicates that the films formed from hexagonal nanoparticles are with low roughness and uniform. UV-vis absorption measurements indicate that the band gap of the Cr{sub 2}O{sub 3} film is 3.08 eV. The PL measurement shows that the Cr{sub 2}O{sub 3} nanofilm has a strong and narrow ultraviolet emission, which facilitates potential applications in future photoelectric nanodevices. Au/Cr{sub 2}O{sub 3}/p-Si metal/interlayer/semiconductor (MIS) diodes were fabricated for investigation of the electronic properties such as current-voltage and capacitance-voltage. Ideality factor and barrier height for Au//Cr{sub 2}O{sub 3}/p-Si diode were calculated as 2.15 eV and 0.74 eV, respectively. Also, interfacial state properties of the MIS diode were determined. The interface-state density of the MIS diode was found to vary from 2.90 x 10{sup 13} eV{sup -1} cm{sup -2} to 8.45 x 10{sup 12} eV{sup -1} cm{sup -2}.

  8. Diode lasers and arrays

    International Nuclear Information System (INIS)

    Streifer, W.

    1988-01-01

    This paper discusses the principles of operation of III-V semiconductor diode lasers, the use of distributed feedback, and high power laser arrays. The semiconductor laser is a robust, miniature, versatile device, which directly converts electricity to light with very high efficiency. Applications to pumping solid-state lasers and to fiber optic and point-to-point communications are reviewed

  9. Double Pass 595 nm Pulsed Dye Laser Does Not Enhance the Efficacy of Port Wine Stains Compared with Single Pass: A Randomized Comparison with Histological Examination.

    Science.gov (United States)

    Yu, Wenxin; Zhu, Jiafang; Wang, Lizhen; Qiu, Yajing; Chen, Yijie; Yang, Xi; Chang, Lei; Ma, Gang; Lin, Xiaoxi

    2018-03-27

    To compare the efficacy and safety of double-pass pulsed dye laser (DWL) and single-pass PDL (SWL) in treating virgin port wine stain (PWS). The increase in the extent of vascular damage attributed to the use of double-pass techniques for PWS remains inconclusive. A prospective, side-by-side comparison with a histological study for virgin PWS is still lacking. Twenty-one patients (11 flat PWS, 10 hypertrophic PWS) with untreated PWS underwent 3 treatments at 2-month intervals. Each PWS was divided into three treatment sites: SWL, DWL, and untreated control. Chromametric and visual evaluation of the efficacy and evaluation of side effects were conducted 3 months after final treatment. Biopsies were taken at the treated sites immediately posttreatment. Chromametric and visual evaluation suggested that DWL sites showed no significant improvement compared with SWL (p > 0.05) in treating PWS. The mean depth of photothermal damage to the vessels was limited to a maximum of 0.36-0.41 mm in both SWL and DWL sides. Permanent side effects were not observed in any patients. Double-pass PDL does not enhance PWS clearance. To improve the clearance of PWS lesions, either the depth of laser penetration should be increased or greater photothermal damage to vessels should be generated.

  10. Comparison of the gravimetric, phenol red, and 14C-PEG-3350 methods to determine water absorption in the rat single-pass intestinal perfusion model.

    Science.gov (United States)

    Sutton, S C; Rinaldi, M T; Vukovinsky, K E

    2001-01-01

    This study was undertaken to determine whether the gravimetric method provided an accurate measure of water flux correction and to compare the gravimetric method with methods that employ nonabsorbed markers (eg, phenol red and 14C-PEG-3350). Phenol red,14C-PEG-3350, and 4-[2-[[2-(6-amino-3-pyridinyl)-2-hydroxyethyl]amino]ethoxy]-, methyl ester, (R)-benzene acetic acid (Compound I) were co-perfused in situ through the jejunum of 9 anesthetized rats (single-pass intestinal perfusion [SPIP]). Water absorption was determined from the phenol red,14C-PEG-3350, and gravimetric methods. The absorption rate constant (ka) for Compound I was calculated. Both phenol red and 14C-PEG-3350 were appreciably absorbed, underestimating the extent of water flux in the SPIP model. The average +/- SD water flux microg/h/cm) for the 3 methods were 68.9 +/- 28.2 (gravimetric), 26.8 +/- 49.2 (phenol red), and 34.9 +/- 21.9 (14C-PEG-3350). The (average +/- SD) ka for Compound I (uncorrected for water flux) was 0.024 +/- 0.005 min(-1). For the corrected, gravimetric method, the average +/- SD was 0.031 +/- 0.001 min(-1). The gravimetric method for correcting water flux was as accurate as the 2 "nonabsorbed" marker methods.

  11. Segmental-dependent membrane permeability along the intestine following oral drug administration: Evaluation of a triple single-pass intestinal perfusion (TSPIP) approach in the rat.

    Science.gov (United States)

    Dahan, Arik; West, Brady T; Amidon, Gordon L

    2009-02-15

    In this paper we evaluate a modified approach to the traditional single-pass intestinal perfusion (SPIP) rat model in investigating segmental-dependent permeability along the intestine following oral drug administration. Whereas in the traditional model one single segment of the intestine is perfused, we have simultaneously perfused three individual segments of each rat intestine: proximal jejunum, mid-small intestine and distal ileum, enabling to obtain tripled data from each rat compared to the traditional model. Three drugs, with different permeabilities, were utilized to evaluate the model: metoprolol, propranolol and cimetidine. Data was evaluated in comparison to the traditional method. Metoprolol and propranolol showed similar P(eff) values in the modified model in all segments. Segmental-dependent permeability was obtained for cimetidine, with lower P(eff) in the distal parts. Similar P(eff) values for all drugs were obtained in the traditional method, illustrating that the modified model is as accurate as the traditional, throughout a wide range of permeability characteristics, whether the permeability is constant or segment-dependent along the intestine. Three-fold higher statistical power to detect segmental-dependency was obtained in the modified approach, as each subject serves as his own control. In conclusion, the Triple SPIP model can reduce the number of animals utilized in segmental-dependent permeability research without compromising the quality of the data obtained.

  12. Sub-nanosecond periodically poled lithium niobate optical parametric generator and amplifier pumped by an actively Q-switched diode-pumped Nd:YAG microlaser

    Science.gov (United States)

    Liu, L.; Wang, H. Y.; Ning, Y.; Shen, C.; Si, L.; Yang, Y.; Bao, Q. L.; Ren, G.

    2017-05-01

    A sub-nanosecond seeded optical parametric generator (OPG) based on magnesium oxide-doped periodically poled lithium niobate (MgO:PPLN) crystal is presented. Pumped by an actively Q-switched diode-pumped 1 kHz, 1064 nm, Nd:YAG microlaser and seeded with a low power distributed feedback (DFB) diode continuous-wave (CW) laser, the OPG generated an output energy of 41.4 µJ and 681 ps pulse duration for the signal at 1652.4 nm, achieving a quantum conversion efficiency of 61.2% and a slope efficiency of 41.8%. Signal tuning was achieved from 1651.0 to 1652.4 nm by tuning the seed-laser current. The FWHM of the signal spectrum was approximately from 35 nm to 0.5 nm by injection seed laser. The SHG doubled the frequency of OPG signal to produce a output energy of 12 µJ with the energy conversion efficiency of 29.0% and tunanble wavelength near 826 nm.

  13. Performance of single-pass and by-pass multi-step multi-soil-layering systems for low-(C/N)-ratio polluted river water treatment.

    Science.gov (United States)

    Wei, Cai-Jie; Wu, Wei-Zhong

    2018-09-01

    Two kinds of hybrid two-step multi-soil-layering (MSL) systems loaded with different filter medias (zeolite-ceramsite MSL-1 and ceramsite-red clay MSL-2) were set-up for the low-(C/N)-ratio polluted river water treatment. A long-term pollutant removal performance of these two kinds of MSL systems was evaluated for 214 days. By-pass was employed in MSL systems to evaluate its effect on nitrogen removal enhancement. Zeolite-ceramsite single-pass MSL-1 system owns outstanding ammonia removal capability (24 g NH 4 + -Nm -2 d -1 ), 3 times higher than MSL-2 without zeolite under low aeration rate condition (0.8 × 10 4  L m -2 .h -1 ). Aeration rate up to 1.6 × 10 4  L m -2 .h -1 well satisfied the requirement of complete nitrification in first unit of both two MSLs. However, weak denitrification in second unit was commonly observed. By-pass of 50% influent into second unit can improve about 20% TN removal rate for both MSL-1 and MSL-2. Complete nitrification and denitrification was achieved in by-pass MSL systems after addition of carbon source with the resulting C/N ratio up to 2.5. The characters of biofilms distributed in different sections inside MSL-1 system well illustrated the nitrogen removal mechanism inside MSL systems. Two kinds of MSLs are both promising as an appealing nitrifying biofilm reactor. Recirculation can be considered further for by-pass MSL-2 system to ensure a complete ammonia removal. Copyright © 2018 Elsevier Ltd. All rights reserved.

  14. High efficiency all-optical plasmonic diode based on a nonlinear side-coupled waveguide-cavity structure with broken symmetry

    Science.gov (United States)

    Liang, Hong-Qin; Liu, Bin; Hu, Jin-Feng; He, Xing-Dao

    2018-05-01

    An all-optical plasmonic diode, comprising a metal-insulator-metal waveguide coupled with a stub cavity, is proposed based on a nonlinear Fano structure. The key technique used is to break structural spatial symmetry by a simple reflector layer in the waveguide. The spatial asymmetry of the structure gives rise to the nonreciprocity of coupling efficiencies between the Fano cavity and waveguides on both sides of the reflector layer, leading to a nonreciprocal nonlinear response. Transmission properties and dynamic responses are numerically simulated and investigated by the nonlinear finite-difference time-domain method. In the proposed structure, high-efficiency nonreciprocal transmission can be achieved with a low power threshold and an ultrafast response time (subpicosecond level). A high maximum transmittance of 89.3% and an ultra-high transmission contrast ratio of 99.6% can also be obtained. The device can be flexibly adjusted for working wavebands by altering the stub cavity length.

  15. Improving the optical performance of InGaN light-emitting diodes by altering light reflection and refraction with triangular air prism arrays.

    Science.gov (United States)

    Kang, Ji Hye; Kim, Hyung Gu; Chandramohan, S; Kim, Hyun Kyu; Kim, Hee Yun; Ryu, Jae Hyoung; Park, Young Jae; Beak, Yun Seon; Lee, Jeong-Sik; Park, Joong Seo; Lysak, Volodymyr V; Hong, Chang-Hee

    2012-01-01

    The effect of triangular air prism (TAP) arrays with different distance-to-width (d/w) ratios on the enhancement of light extraction efficiency (LEE) of InGaN light-emitting diodes (LEDs) is investigated. The TAP arrays embedded at the sapphire/GaN interface act as light reflectors and refractors, and thereby improve the light output power due to the redirection of light into escape cones on both the front and back sides of the LED. Enhancement in radiometric power as high as 117% and far-field angle as low as 129° are realized with a compact arrangement of TAP arrays compared with that of a conventional LED made without TAP arrays under an injection current of 20 mA. © 2012 Optical Society of America

  16. Towards a versatile active wavelength converter for all-optical networks based on quasi-phase matched intra-cavity difference-frequency generation.

    Science.gov (United States)

    Torregrosa, Adrián J; Maestre, Haroldo; Capmany, Juan

    2013-11-18

    The availability of reconfigurable all-optical wavelength converters for an efficient and flexible use of optical resources in WDM (wavelength division multiplexing) networks is still lacking at present. We propose and report preliminary results on a versatile active technique for multiple and tunable wavelength conversions in the 1500-1700 nm spectral region. The technique is based on combining broadband quasi-phase matched intra-cavity parametric single-pass difference-frequency generation close to degeneracy in a diode-pumped tunable laser. A periodically poled stoichiometric lithium tantalate crystal is used as the nonlinear medium, with a parametric pump wave generated in a continuous-wave self-injection locked Cr3+:LiCAF tunable laser operating at around 800 nm.

  17. Optical efficiency enhancement in white organic light-emitting diode display with high color gamut using patterned quantum dot film and long pass filter

    Science.gov (United States)

    Kim, Hyo-Jun; Shin, Min-Ho; Kim, Young-Joo

    2016-08-01

    A new structure for white organic light-emitting diode (OLED) displays with a patterned quantum dot (QD) film and a long pass filter (LPF) was proposed and evaluated to realize both a high color gamut and high optical efficiency. Since optical efficiency is a critical parameter in white OLED displays with a high color gamut, a red or green QD film as a color-converting component and an LPF as a light-recycling component are introduced to be adjusted via the characteristics of a color filter (CF). Compared with a conventional white OLED without both a QD film and the LPF, it was confirmed experimentally that the optical powers of red and green light in a new white OLED display were increased by 54.1 and 24.7% using a 30 wt % red QD film and a 20 wt % green QD film with the LPF, respectively. In addition, the white OLED with both a QD film and the LPF resulted in an increase in the color gamut from 98 to 107% (NTSC x,y ratio) due to the narrow emission linewidth of the QDs.

  18. An optical and electrical study of full thermally activated delayed fluorescent white organic light-emitting diodes

    OpenAIRE

    Pereira, Daniel de Sa; dos Santos, Paloma L.; Ward, Jonathan S.; Data, Przemyslaw; Okazaki, Masato; Takeda, Youhei; Minakata, Satoshi; Bryce, Martin R.; Monkman, Andrew P.

    2017-01-01

    We report on the engineering of full thermally activated delayed fluorescence – based white organic light emitting diodes (W-OLEDs) composed of three emitters (2,7-bis(9,9-dimethyl-acridin-10-yl)-9,9-dimethylthioxanthene-S,S-dioxide (DDMA-TXO2), 2,7-bis(phenoxazin-10-yl)-9,9-dimethylthioxanthene-S,S-dioxide (DPO-TXO2) and 3,11-di(10H-phenoxazin-10-yl)dibenzo[a,j]phenazine (POZ-DBPHZ) in two different hosts. By controlling the device design through the study of the emission of DDMA-TXO2 and DP...

  19. Optical characterization of magnesium incorporation in p-GaN layers for core–shell nanorod light-emitting diodes

    Science.gov (United States)

    Gîrgel, I.; Šatka, A.; Priesol, J.; Coulon, P.-M.; Le Boulbar, E. D.; Batten, T.; Allsopp, D. W. E.; Shields, P. A.

    2018-04-01

    III-nitride nanostructures are of interest for a new generation of light-emitting diodes (LEDs). However, the characterization of doping incorporation in nanorod (NR) structures, which is essential for creating the p-n junction diodes, is extremely challenging. This is because the established electrical measurement techniques (such as capacitance–voltage or Hall-effect methods) require a simple sample geometry and reliable ohmic contacts, both of which are difficult to achieve in nanoscale devices. The need for homogenous, conformal n-type or p-type layers in core–shell nanostructures magnifies these challenges. Consequently, we demonstrate how a combination of non-contact methods (micro-photoluminescence, micro-Raman and cathodoluminescence), as well as electron-beam-induced-current, can be used to analyze the uniformity of magnesium incorporation in core–shell NRs and make a first estimate of doping levels by the evolution of band transitions, strain and current mapping. These techniques have been used to optimize the growth of core–shell nanostructures for electrical carrier injection, a significant milestone for their use in LEDs.

  20. Evaluation of the Long-Term Performance of Titanate Ceramics for Immobilization of Excess Weapons Plutonium: Results from Pressurized Unsaturated Flow and Single Pass Flow-Through Testing

    International Nuclear Information System (INIS)

    BP McGrail; HT Schaef; JP Icenhower; PF Martin; RD Orr; VL Legore

    1999-01-01

    This report summarizes our findings from pressurized unsaturated flow (PUF) and single-pass flow-through (SPFT) experiments to date. Results from the PUF test of a Pu-bearing ceramic with enclosing surrogate high-level waste glass show that the glass reacts rapidly to alteration products. Glass reaction causes variations in the solution pH in contact with the ceramic materials. We also document variable concentrations of Pu in solution, primarily in colloidal form, which appear to be related to secular variations in solution composition. The apparent dissolution rate of the ceramic waste form, based on Ba concentrations in the effluent, is estimated at le 10 -5 g/(m 2 · d). Pu-bearing colloids were recovered in the size range of 0.2 to 2 microm, but it is not clear that such entities would be transported in a system that is not advective-flow dominated. Results from SPFT experiments give information on the corrosion resistance of two surrogate Pu-ceramics (Ce-pyrochlore and Ce-zirconolite) at 90 C over a pH range of 2 to 12. The two ceramics were doped with minor quantities (approximately0.1 mass%) of MoO 3 , so that concentrations of Mo in the effluent solution could be used to monitor the reaction behavior of the materials. The data obtained thus far from experiments with durations up to 150 d do not conclusively prove that the solid-aqueous solution systems have reached steady-state conditions. Therefore, the dissolution mechanism cannot be determined. Apparent dissolution rates of the two ceramic materials based on Ce, Gd, and Mo concentrations in the effluent solutions from the SPFT are nearly identical and vary between 1.1 to 8.5 x 10 -4 g/(m 2 · d). In addition, the data reveal a slightly amphoteric dissolution behavior, with a minimum apparent rate at pH = 7 to 8, over the pH range examined. Results from two related ceramic samples suggest that radiation damage can have a measurable effect on the dissolution of titanium-based ceramics. The rare earth

  1. A data-driven and physics-based single-pass retrieval of active-passive microwave covariation and vegetation parameters for the SMAP mission

    Science.gov (United States)

    Entekhabi, D.; Jagdhuber, T.; Das, N. N.; Baur, M.; Link, M.; Piles, M.; Akbar, R.; Konings, A. G.; Mccoll, K. A.; Alemohammad, S. H.; Montzka, C.; Kunstmann, H.

    2016-12-01

    The active-passive soil moisture retrieval algorithm of NASA's SMAP mission depends on robust statistical estimation of active-passive covariation (β) and vegetation structure (Γ) parameters in order to provide reliable global measurements of soil moisture on an intermediate level (9km) compared to the native resolution of the radiometer (36km) and radar (3km) instruments. These parameters apply to the SMAP radiometer-radar combination over the period of record that was cut short with the end of the SMAP radar transmission. They also apply to the current SMAP radiometer and Sentinel 1A/B radar combination for high-resolution surface soil moisture mapping. However, the performance of the statistically-based approach is directly dependent on the selection of a representative time frame in which these parameters can be estimated assuming dynamic soil moisture and stationary soil roughness and vegetation cover. Here, we propose a novel, data-driven and physics-based single-pass retrieval of active-passive microwave covariation and vegetation parameters for the SMAP mission. The algorithm does not depend on time series analyses and can be applied using minimum one pair of an active-passive acquisition. The algorithm stems from the physical link between microwave emission and scattering via conservation of energy. The formulation of the emission radiative transfer is combined with the Distorted Born Approximation of radar scattering for vegetated land surfaces. The two formulations are simultaneously solved for the covariation and vegetation structure parameters. Preliminary results from SMAP active-passive observations (April 13th to July 7th 2015) compare well with the time-series statistical approach and confirms the capability of this method to estimate these parameters. Moreover, the method is not restricted to a given frequency (applies to both L-band and C-band combinations for the radar) or incidence angle (all angles and not just the fixed 40° incidence

  2. Analysis of carrier transport and carrier trapping in organic diodes with polyimide-6,13-Bis(triisopropylsilylethynyl)pentacene double-layer by charge modulation spectroscopy and optical second harmonic generation measurement

    Energy Technology Data Exchange (ETDEWEB)

    Lim, Eunju, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp [Department of Applied Physics, Institute of Nanosensor and Biotechnology, Dankook University, Jukjeon-dong, Gyeonggi-do 448-701 (Korea, Republic of); Taguchi, Dai, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp; Iwamoto, Mitsumasa, E-mail: elim@dankook.ac.kr, E-mail: taguchi.d.aa@m.titech.ac.jp, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology 2-12-1, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2014-08-18

    We studied the carrier transport and carrier trapping in indium tin oxide/polyimide (PI)/6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)/Au diodes by using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements. TR-EFISHG directly probes the spatial carrier behaviors in the diodes, and CMS is useful in explaining the carrier motion with respect to energy. The results clearly indicate that the injected carriers move across TIPS-pentacene thorough the molecular energy states of TIPS-pentacene and accumulate at the PI/TIPS-pentacene interface. However, some carriers are trapped in the PI layers. These findings take into account the capacitance-voltage and current-voltage characteristics of the diodes.

  3. Blue and Orange Two-Color CW Laser Based on Single-Pass Second-Harmonic and Sum-Frequency Generation in MgO:PPLN

    Directory of Open Access Journals (Sweden)

    Dismas K. Choge

    2018-04-01

    Full Text Available We demonstrate a compact blue and orange-two color continuous wave laser source emitting at 487 nm and from 597.4 to 600.3 nm, respectively. The temperature tunable coherent orange radiation is achieved by frequency mixing 974 nm laser diode (LD and a C-band amplified spontaneous emission laser source while the temperature insensitive blue radiation is generated by second-order quasi-phase-matching frequency doubling of 974 nm LD. We implement the simultaneous nonlinear processes in a single magnesium oxide doped periodically poled lithium niobate bulk crystal without the need of an aperiodic design.

  4. NONLINEAR OPTICAL PHENOMENA Intracavity SRS conversion in diode-pumpedmultifunctional Nd3+:SrMoO4 laser crystal

    Science.gov (United States)

    Basiev, Tasoltan T.; Smetanin, Sergei N.; Fedin, Aleksandr V.; Shurygin, Anton S.

    2010-10-01

    Lasing of a miniature all-solid-state SRS laser based on a Nd3+:SrMoO4 crystal with a LiF:F2--passive Q-switch is studied. The dependences of the laser and SRS self-conversion parameters on the initial transmission of the passive Q-switch are studied experimentally and theoretically. Simulation of the lasing kinetics has shown the possibility of nonlinear cavity dumping upon highly efficient SRS self-conversion of laser radiation. An increase in the active medium length from 1 to 3mm resulted in an increase in the energy of the output 1.17-μm SRS radiation from 20 μJ to record-high 60 μJ at the absorbed multimode diode pump energy of 3.7 mJ.

  5. Real-Time Video Transmission Over Different Underwater Wireless Optical Channels Using a Directly Modulated 520  nm Laser Diode

    KAUST Repository

    Al-Halafi, Abdullah; Oubei, Hassan M.; Ooi, Boon S.; Shihada, Basem

    2017-01-01

    We experimentally demonstrate high-quality real-time video streaming over an underwater wireless optical communication (UWOC) link up to 5 m distance using phase-shift keying (PSK) modulation and quadrature amplitude modulation (QAM) schemes. The communication system uses software defined platforms connected to a commercial TO-9 packaged pigtailed 520 nm directly modulated laser diode (LD) with 1.2 GHz bandwidth as the optical transmitter and an avalanche photodiode (APD) module as the receiver. To simulate various underwater channels, we perform laboratory experiments on clear, coastal, harbor I, and harbor II ocean water types. The measured bit error rates of the received video streams are 1.0×10−9 for QPSK, 4-QAM, and 8-QAM and 9.9×10−9 for 8-PSK. We further evaluate the quality of the received live video images using structural similarity and achieve values of about 0.9 for the first three water types, and about 0.7 for harbor II. To the best of our knowledge, these results present the highest quality video streaming ever achieved in UWOC systems that resemble communication channels in real ocean water environments.

  6. Morphologies and optical and electrical properties of InGaN/GaN micro-square array light-emitting diode chips.

    Science.gov (United States)

    Han, Dan; Ma, Shufang; Jia, Zhigang; Liu, Peizhi; Jia, Wei; Shang, Lin; Zhai, Guangmei; Xu, Bingshe

    2018-04-10

    InGaN/GaN micro-square array light-emitting diode (LED) chips (micro-chips) have been prepared via the focused ion beam (FIB) etching technique, which can not only reduce ohmic contact degradation but also control the aspect ratio precisely in three-dimensional (3D) structure LED (3D-LED) device fabrication. The effects of FIB beam current and micro-square array depth on morphologies and optical and electrical properties of the micro-chips have been studied. Our results show that sidewall surface morphology and optical and electrical properties of the micro-chips degrade with increased beam current. After potassium hydroxide etching with different times, an optimal current-voltage and luminescence performance can be obtained. Combining the results of cathodoluminescence mappings and light output-current characteristics, the light extraction efficiency of the micro-chips is reduced as FIB etch depth increases. The mechanisms of micro-square depth on light extraction have been revealed by 3D finite difference time domain.

  7. CT-guided percutaneous laser disc decompression with Ceralas D, a diode laser with 980-nm wavelength and 200-μm fiber optics

    International Nuclear Information System (INIS)

    Gevargez, A.; Groenemeyer, D.W.H.; Czerwinski, F.

    2000-01-01

    The aim of this study was to evaluate the compact, portable Ceralas-D diode laser (CeramOptec; 980+30 nm wavelength, 200-μm optical fiber) concerning clinical usefulness, handling, and clinical results in the CT-guided treatment of herniated lumbar discs. The positioning of the canula in intradiscal space, the placement of the laser fiber into the disc through the lying canula, and the vaporization itself were carried out under CT-guidance. Due to the thin fiber optic, it was possible to use a thin 23-gauge canula. The laser procedure was performed in 0.1- to 1-s shots with 1-s pulse pause and 4-W power output. A total of 1650-2300 J was applied on each percutaneous laser disc decompression (PLDD). Results in 26 patients were established with a visual-analogue scale (VAS). On the follow-up examinations, 46% of the patients were absolutely pain free (>85% VAS) and fully active in everyday life after 4 postoperative weeks. Thirty-one percent of patients were relieved of the leg pain but had occasional back pain without sensorimotor impairment. Fifteen percent sensed a slight alleviation (>50% VAS) of the radiate pain. Eight percent did not experience radicular or pseudo-radicular pain alleviation (<25% VAS). Cerales-D proves to be an efficient tool for CT-guided PLDD on non-sequestered herniated lumbar discs. (orig.)

  8. Combined electrical and resonant optical excitation characterization of multi-quantum well InGaN-based light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Presa, S., E-mail: silvino.presa@tyndall.ie [Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork (Ireland); School of Engineering, University College Cork, Cork (Ireland); Maaskant, P. P.; Corbett, B. [Tyndall National Institute, University College Cork, Lee Maltings, Dyke Parade, Cork (Ireland); Kappers, M. J.; Humphreys, C. J. [Dep. Material Science and Metallurgy, University of Cambridge, CB3 0FS, Cambridge (United Kingdom)

    2016-07-15

    We present a comprehensive study of the emission spectra and electrical characteristics of InGaN/GaN multi-quantum well light-emitting diode (LED) structures under resonant optical pumping and varying electrical bias. A 5 quantum well LED with a thin well (1.5 nm) and a relatively thick barrier (6.6 nm) shows strong bias-dependent properties in the emission spectra, poor photovoltaic carrier escape under forward bias and an increase in effective resistance when compared with a 10 quantum well LED with a thin (4 nm) barrier. These properties are due to a strong piezoelectric field in the well and associated reduced field in the thicker barrier. We compare the voltage ideality factors for the LEDs under electrical injection, light emission with current, photovoltaic mode (PV) and photoluminescence (PL) emission. The PV and PL methods provide similar values for the ideality which are lower than for the resistance-limited electrical method. Under optical pumping the presence of an n-type InGaN underlayer in a commercial LED sample is shown to act as a second photovoltaic source reducing the photovoltage and the extracted ideality factor to less than 1. The use of photovoltaic measurements together with bias-dependent spectrally resolved luminescence is a powerful method to provide valuable insights into the dynamics of GaN LEDs.

  9. Optical investigation of microscopic defect distribution in semi-polar (1-101 and 11-22) InGaN light-emitting diodes

    Science.gov (United States)

    Hafiz, Shopan; Andrade, Nicolas; Monavarian, Morteza; Izyumskaya, Natalia; Das, Saikat; Zhang, Fan; Avrutin, Vitaliy; Morkoç, Hadis; Özgür, Ümit

    2016-02-01

    Near-field scanning optical microscopy was applied to investigate the spatial variations of extended defects and their effects on the optical quality for semi-polar (1-101) and (11-22) InGaN light emitting diodes (LEDs). (1-101) and (11-22) oriented InGaN LEDs emitting at 450-470 nm were grown on patterned Si (001) 7° offcut substrates and m-sapphire substrates by means of nano-epitaxial lateral overgrowth (ELO), respectively. For (1-101) structures, the photoluminescence (PL) at 85 K from the near surface c+ wings was found to be relatively uniform and strong across the sample. However, emission from the c- wings was substantially weaker due to the presence of high density of threading dislocations (TDs) and basal plane stacking faults (BSFs) as revealed from the local PL spectra. In case of (11-22) LED structures, near-field PL intensity correlated with the surface features and the striations along the direction parallel to the c-axis projection exposed facets where the Indium content was higher as deduced from shift in the PL peak energy.

  10. The effects of temperature on optical properties of InGaN/GaN multiple quantum well light-emitting diodes

    Science.gov (United States)

    Li, Yi; Zhu, Youhua; Huang, Jing; Deng, Honghai; Wang, Meiyu; Yin, HaiHong

    2017-02-01

    The effects of temperature on the optical properties of InGaN/GaN quantum well (QW) light-emitting diodes have been investigated by using the six-by-six K-P method taking into account the temperature dependence of band gaps, lattice constants, and elastic constants. The numerical results indicate that the increase of temperature leads to the decrease of the spontaneous emission rate at the same injection current density due to the redistribution of carrier density and the increase of the non-radiative recombination rate. The product of Fermi-Dirac distribution functions of electron fc n and hole ( 1 - fv U m ) for the transitions between the three lowest conduction subbands (c1-c3) and the top six valence subbands (v1-v6) is larger at the lower temperature, which indicates that there are more electron-hole pairs distributed on the energy levels. It should be noted that the optical matrix elements of the inter-band transitions slightly increase at the higher temperature. In addition, the internal quantum efficiency of the InGaN/GaN QW structure is evidently decreased with increasing temperature.

  11. Real-Time Video Transmission Over Different Underwater Wireless Optical Channels Using a Directly Modulated 520  nm Laser Diode

    KAUST Repository

    Al-Halafi, Abdullah

    2017-09-13

    We experimentally demonstrate high-quality real-time video streaming over an underwater wireless optical communication (UWOC) link up to 5 m distance using phase-shift keying (PSK) modulation and quadrature amplitude modulation (QAM) schemes. The communication system uses software defined platforms connected to a commercial TO-9 packaged pigtailed 520 nm directly modulated laser diode (LD) with 1.2 GHz bandwidth as the optical transmitter and an avalanche photodiode (APD) module as the receiver. To simulate various underwater channels, we perform laboratory experiments on clear, coastal, harbor I, and harbor II ocean water types. The measured bit error rates of the received video streams are 1.0×10−9 for QPSK, 4-QAM, and 8-QAM and 9.9×10−9 for 8-PSK. We further evaluate the quality of the received live video images using structural similarity and achieve values of about 0.9 for the first three water types, and about 0.7 for harbor II. To the best of our knowledge, these results present the highest quality video streaming ever achieved in UWOC systems that resemble communication channels in real ocean water environments.

  12. Design of optical element combining Fresnel lens with microlens array for uniform light-emitting diode lighting.

    Science.gov (United States)

    Wang, Guangzhen; Wang, Lili; Li, Fuli; Kong, Depeng

    2012-09-01

    One kind of optical element combining Fresnel lens with microlens array is designed simply for LED lighting based on geometrical optics and nonimaging optics. This design method imposes no restriction on the source intensity pattern. The designed element has compact construction and can produce multiple shapes of illumination distribution. Taking square lighting as an example, tolerance analysis is carried out to determine tolerance limits for applying the element in the assembly process. This element can produce on-axis lighting and off-axis lighting.

  13. Influence of laser lift-off on optical and structural properties of InGaN/GaN vertical blue light emitting diodes

    Directory of Open Access Journals (Sweden)

    M. H. Doan

    2012-06-01

    Full Text Available The influences of the laser lift-off (LLO process on the InGaN/GaN blue light emitting diode (LED structures, grown on sapphire substrates by low-pressure metalorganic chemical vapor deposition, have been comprehensively investigated. The vertical LED structures on Cu carriers are fabricated using electroplating, LLO, and inductively coupled plasma etching processes sequentially. A detailed study is performed on the variation of defect concentration and optical properties, before and after the LLO process, employing high-resolution transmission electron microscopy (HRTEM, scanning electron microscopy (SEM observations, cathodoluminescence (CL, photoluminescence (PL, and high-resolution X-ray diffraction (HRXRD measurements. The SEM observations on the distribution of dislocations after the LLO show well that even the GaN layer near to the multiple quantum wells (MQWs is damaged. The CL measurements reveal that the peak energy of the InGaN/GaN MQW emission exhibits a blue-shift after the LLO process in addition to a reduced intensity. These behaviors are attributed to a diffusion of indium through the defects created by the LLO and creation of non-radiative recombination centers. The observed phenomena thus suggest that the MQWs, the active region of the InGaN/GaN light emitting diodes, may be damaged by the LLO process when thickness of the GaN layer below the MQW is made to be 5 μm, a conventional thickness. The CL images on the boundary between the KrF irradiated and non-irradiated regions suggest that the propagation of the KrF laser beam and an accompanied recombination enhanced defect reaction, rather than the propagation of a thermal shock wave, are the main origin of the damage effects of the LLO process on the InGaN/GaN MQWs and the n-GaN layer as well.

  14. Holographic Optical Element-Based Laser Diode Source System for Direct Metal Deposition in Space, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — To meet the challenges of rapid prototyping, direct hardware fabrication, and on-the-spot repairs on the ground and on NASA space platforms, Physical Optics...

  15. High-power non linear frequency converted laser diodes

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Andersen, Peter E.; Hansen, Anders Kragh

    2015-01-01

    We present different methods of generating light in the blue-green spectral range by nonlinear frequency conversion of tapered diode lasers achieving state-of-the-art power levels. In the blue spectral range, we show results using single-pass second harmonic generation (SHG) as well as cavity enh...... enhanced sum frequency generation (SFG) with watt-level output powers. SHG and SFG are also demonstrated in the green spectral range as a viable method to generate up to 4 W output power with high efficiency using different configurations....

  16. Graphene geometric diodes for terahertz rectennas

    International Nuclear Information System (INIS)

    Zhu Zixu; Joshi, Saumil; Grover, Sachit; Moddel, Garret

    2013-01-01

    We demonstrate a new thin-film graphene diode called a geometric diode that relies on geometric asymmetry to provide rectification at 28 THz. The geometric diode is coupled to an optical antenna to form a rectenna that rectifies incoming radiation. This is the first reported graphene-based antenna-coupled diode working at 28 THz, and potentially at optical frequencies. The planar structure of the geometric diode provides a low RC time constant, on the order of 10 −15 s, required for operation at optical frequencies, and a low impedance for efficient power transfer from the antenna. Fabricated geometric diodes show asymmetric current–voltage characteristics consistent with Monte Carlo simulations for the devices. Rectennas employing the geometric diode coupled to metal and graphene antennas rectify 10.6 µm radiation, corresponding to an operating frequency of 28 THz. The graphene bowtie antenna is the first demonstrated functional antenna made using graphene. Its response indicates that graphene is a suitable terahertz resonator material. Applications for this terahertz diode include terahertz-wave and optical detection, ultra-high-speed electronics and optical power conversion. (paper)

  17. High-energy, tunable, mid-infrared, picosecond optical parametric generation in CdSiP2

    Science.gov (United States)

    Chaitanya Kumar, S.; Jelínek, M.; Baudisch, M.; Zawilski, K. T.; Schunemann, P. G.; Kubecek, V.; Biegert, J.; Ebrahim-Zadeh, M.

    2012-06-01

    We report a tunable, high-energy, single-pass, optical parametric generator (OPG) based on the new nonlinear material, cadmium silicon phosphide, CdSiP2. The OPG is pumped by a laboratory designed cavity-dumped passively mode-locked, diode-pumped, Nd:YAG oscillator, providing 25 μJ pulses in 20 ps at 5 Hz. The pump energy is further boosted by a flashlamp-pumped Nd:YAG amplifier to 2.5 mJ. The OPG is temperature tunable over 1263-1286 nm (23 nm) in the signal and 6153-6731 nm (578 nm) in the idler, corresponding to a total tuning range of 601 nm. Using the single-pass OPG configuration, we have generated signal energy as high as 636 μJ at 1283 nm, together with an idler energy of 33 μJ at 6234 nm, for 2.1 mJ of input pump energy. The signal pulses generated from the OPG have a Gaussian pulse duration of 24 ps and an FWHM spectral bandwidth of 10.4 nm at central wavelength of 1276 nm. The corresponding idler spectrum has an FWHM bandwidth of 140 nm centered at 6404 nm.

  18. Electromagnetic wave analogue of electronic diode

    OpenAIRE

    Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

    2010-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...

  19. Performance of continuous wave and acousto-optically Q-switched Tm, Ho: YAP laser pumped by diode laser

    Science.gov (United States)

    Li, Guoxing; Xie, Wenqiang; Yang, Xining; Zhang, Ziqiu; Zhang, Hongda; Zhang, Liang

    2018-02-01

    A two-end-pumped a-cut Tm(0.5%), Ho(0.5%):YAP laser output at 2119nm is reported under cryogenic temperature. The maximum output power reached to 7.76W with the incident pump power of 24.2W in CW mode. With the acousto-optically Q-switch, an average power of 7.3W can be obtained, when the pulse repetition frequency was 7.5 kHz. The corresponding optical-to-optical conversion efficiency was 30.2% and the slope efficiency was 31.4%. Then, the laser output characteristics in the repetition frequency of 7.5 kHz and 10kHz were researched. The output power, the optical-to-optical conversion efficiency and slope efficiency were increased with the increase of the repetition frequency. In the same repetition frequency, the pulse duration was decreasing with the growth of the incident pump power.

  20. 2.3 Gbit/s underwater wireless optical communications using directly modulated 520 nm laser diode

    KAUST Repository

    Oubei, Hassan M.; Li, Changping; Park, Kihong; Ng, Tien Khee; Alouini, Mohamed-Slim; Ooi, Boon S.

    2015-01-01

    We experimentally demonstrate a record high-speed underwater wireless optical communication (UWOC) over 7 m distance using on-off keying non-return-to-zero (OOK-NRZ) modulation scheme. The communication link uses a commercial TO-9 packaged pigtailed

  1. All-optical flip-flop operation based on asymmetric active-multimode interferometer bi-stable laser diodes

    DEFF Research Database (Denmark)

    Jiang, H.; Chaen, Y.; Hagio, T.

    2011-01-01

    We demonstrate fast and low energy all optical flip-flop devices based on asymmetric active-multimode interferometer using high-mesa waveguide structure. The implemented devices showed high speed alloptical flip-flop operation with 25ps long pulses. The rising and falling times of the output sign...

  2. Design and evaluation of capillary coupled with optical fiber light-emitting diode induced fluorescence detection for capillary electrophoresis.

    Science.gov (United States)

    Ji, Hongyun; Li, Meng; Guo, Lihong; Yuan, Hongyan; Wang, Chunling; Xiao, Dan

    2013-09-01

    A new detector, capillary coupled with optical fiber LED-induced fluorescence detector (CCOF-LED-IFD, using CCOF for short), is introduced for CE. The strategy of the present work was that the optical fiber and separation capillary were, in the parallel direction, fastened in a fixation capillary with larger inner diameter. By employing larger inner diameter, the fixation capillary allowed the large diameter of the optical fiber to be inserted into it. By transmitting an enhanced excitation light through the optical fiber, the detection sensitivity was improved. The advantages of the CCOF-CE system were validated by the detection of riboflavin, and the results were compared to those obtained by the in-capillary common optical fiber LED-induced fluorescence detector (IC-COF-LED-IFD, using COF for short). The LODs of CCOF-CE and COF-CE were 0.29 nM and 11.0 nM (S/N = 3), respectively. The intraday (n = 6) repeatability and interday (n = 6) reproducibility of migration time and corresponding peak area for both types of CE were all less than 1.10 and 3.30%, respectively. The accuracy of the proposed method was judged by employing standard addition method, and recoveries obtained were in the range of 98.0-102.4%. The results indicated that the sensitivity of the proposed system was largely improved, and that its reproducibility and accuracy were satisfactory. The proposed system was successfully applied to separate and determine riboflavin in real sample. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Destructive Single-Event Effects in Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Campola, Michael J.; Wilcox, Edward P.; Phan, Anthony M.; Label, Kenneth A.

    2017-01-01

    In this work, we discuss the observed single-event effects in a variety of types of diodes. In addition, we conduct failure analysis on several Schottky diodes that were heavy-ion irradiated. High- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images are used to identify and describe the failure locations.

  4. Determination on the Coefficient of Thermal Expansion in High-Power InGaN-based Light-emitting Diodes by Optical Coherence Tomography.

    Science.gov (United States)

    Lee, Ya-Ju; Chou, Chun-Yang; Huang, Chun-Ying; Yao, Yung-Chi; Haung, Yi-Kai; Tsai, Meng-Tsan

    2017-10-31

    The coefficient of thermal expansion (CTE) is a physical quantity that indicates the thermal expansion value of a material upon heating. For advanced thermal management, the accurate and immediate determination of the CTE of packaging materials is gaining importance because the demand for high-power lighting-emitting diodes (LEDs) is currently increasing. In this study, we used optical coherence tomography (OCT) to measure the CTE of an InGaN-based (λ = 450 nm) high-power LED encapsulated in polystyrene resin. The distances between individual interfaces of the OCT images were observed and recorded to derive the instantaneous CTE of the packaged LED under different injected currents. The LED junction temperature at different injected currents was established with the forward voltage method. Accordingly, the measured instantaneous CTE of polystyrene resin varied from 5.86 × 10 -5  °C -1 to 14.10 × 10 -5  °C -1 in the junction temperature range 25-225 °C and exhibited a uniform distribution in an OCT scanning area of 200 × 200 μm. Most importantly, this work validates the hypothesis that OCT can provide an alternative way to directly and nondestructively determine the spatially resolved CTE of the packaged LED device, which offers significant advantages over traditional CTE measurement techniques.

  5. Analysis of interfacial energy states in Au/pentacene/polyimide/indium-zinc-oxide diodes by electroluminescence spectroscopy and electric-field-induced optical second-harmonic generation measurement

    Science.gov (United States)

    Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2016-03-01

    By using electroluminescence (EL) spectroscopy and electric-field-induced optical second-harmonic generation (EFISHG) measurement, we analyzed interfacial energy states in Au/pentacene/polyimide/indium-zinc-oxide (IZO) diodes, to characterize the pentacene/polyimide interface. Under positive voltage application to the Au electrode with reference to the IZO electrode, the EFISHG showed that holes are injected from Au electrode, and accumulate at the pentacene/polyimide interface with the surface charge density of Qs = 3.8 × 10-7 C/cm2. The EL spectra suggested that the accumulated holes are not merely located in the pentacene but they are transferred to the interface states of polyimide. These accumulated holes distribute with the interface state density greater than 1012 cm-2 eV-1 in the range E = 1.5-1.8 and 1.7-2.4 eV in pentacene and in polyimide, respectively, under assumption that accumulated holes govern recombination radiation. The EL-EFISHG measurement is helpful to characterize organic-organic layer interfaces in organic devices and provides a way to analyze interface energy states.

  6. Study on the structural, optical, and electrical properties of the yellow light-emitting diode grown on free-standing (0001) GaN substrate

    Science.gov (United States)

    Deng, Gaoqiang; Zhang, Yuantao; Yu, Ye; Yan, Long; Li, Pengchong; Han, Xu; Chen, Liang; Zhao, Degang; Du, Guotong

    2018-04-01

    In this paper, GaN-based yellow light-emitting diodes (LEDs) were homoepitaxially grown on free-standing (0001) GaN substrates by metal-organic chemical vapor deposition. X-ray diffraction (XRD), photoluminescence (PL), and electroluminescence (EL) measurements were conducted to investigate the structural, optical, and electrical properties of the yellow LED. The XRD measurement results showed that the InGaN/GaN multiple quantum wells (MQWs) in the LED structure have good periodicity because the distinct MQWs related higher order satellite peaks can be clearly observed from the profile of 2θ-ω XRD scan. The low temperature (10 K) and room temperature PL measurement results yield an internal quantum efficiency of 16% for the yellow LED. The EL spectra of the yellow LED present well Gaussian distribution with relatively low linewidth (47-55 nm), indicating the homogeneous In-content in the InGaN quantum well layers in the yellow LED structure. It is believed that this work will aid in the future development of GaN on GaN LEDs with long emission wavelength.

  7. Analysis of current-voltage characteristics of Au/pentacene/fluorine polymer/indium zinc oxide diodes by electric-field-induced optical second-harmonic generation

    Energy Technology Data Exchange (ETDEWEB)

    Nishi, Shohei; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa, E-mail: iwamoto@pe.titech.ac.jp [Department of Physical Electronics, Tokyo Institute of Technology, 2-12-1 S3-33, O-okayama, Meguro-ku, Tokyo 152-8552 (Japan)

    2015-06-28

    By using electric-field-induced optical second-harmonic generation measurement coupled with the conventional current-voltage (I-V) measurement, we studied the carrier transport of organic double-layer diodes with a Au/pentacene/fluorine polymer (FP)/indium zinc oxide (IZO) structure. The rectifying I-V characteristics were converted into the I-E characteristics of the FP and pentacene layers. Results suggest a model in which Schottky-type electron injection from the IZO electrode to the FP layer governs the forward electrical conduction (V > 0), where the space charge electric field produced in the FP layer by accumulated holes at the pentacene/FP interface makes a significant contribution. On the other hand, Schottky-type injection by accumulated interface electrons from the pentacene layer to the FP layer governs the backward electrical conduction (V < 0). The electroluminescence generated from the pentacene layer in the region V > 0 verifies the electron transport across the FP layer, and supports the above suggested model.

  8. Analysis of current-voltage characteristics of Au/pentacene/fluorine polymer/indium zinc oxide diodes by electric-field-induced optical second-harmonic generation

    International Nuclear Information System (INIS)

    Nishi, Shohei; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2015-01-01

    By using electric-field-induced optical second-harmonic generation measurement coupled with the conventional current-voltage (I-V) measurement, we studied the carrier transport of organic double-layer diodes with a Au/pentacene/fluorine polymer (FP)/indium zinc oxide (IZO) structure. The rectifying I-V characteristics were converted into the I-E characteristics of the FP and pentacene layers. Results suggest a model in which Schottky-type electron injection from the IZO electrode to the FP layer governs the forward electrical conduction (V > 0), where the space charge electric field produced in the FP layer by accumulated holes at the pentacene/FP interface makes a significant contribution. On the other hand, Schottky-type injection by accumulated interface electrons from the pentacene layer to the FP layer governs the backward electrical conduction (V < 0). The electroluminescence generated from the pentacene layer in the region V > 0 verifies the electron transport across the FP layer, and supports the above suggested model

  9. Optical 16-QAM-52-OFDM transmission at 4 Gbit/s by directly modulating a coherently injection-locked colorless laser diode.

    Science.gov (United States)

    Chi, Yu-Chieh; Li, Yi-Cheng; Wang, Huai-Yung; Peng, Peng-Chun; Lu, Hai-Han; Lin, Gong-Ru

    2012-08-27

    Coherently injection-locked and directly modulated weak-resonant-cavity laser diode (WRC-FPLD) for back-to-back optical 16-quadrature-amplitude-modulation (QAM) and 52-subcarrier orthogonal frequency division multiplexing (OFDM) transmission with maximum bit rate up to 4 Gbit/s at carrier frequency of 2.5 GHz is demonstrated. The WRC-FPLD transmitter source is a specific design with very weak-resonant longitudinal modes to preserve its broadband gain spectral characteristics for serving as a colorless WDM-PON transmitter. Under coherent injection-locking, the relative-intensity noise (RIN) of the injection-locked WRC-FPLD can be suppressed to ?105 dBc/Hz and the error vector magnitude of the received optical OFDM data is greatly reduced with the amplitude error suppressed down 5.5%. Such a coherently injection-locked single-mode WRC-FPLD can perform both the back-to-back and the 25-km-SMF 16-QAM-52-OFDM transmissions with a symbol rate of 20-MSa/s in each OFDM subcarrier. After coherent injection locking, the BER of the back-to-back transmitted 16-QAM-52-OFDM data is reduced to 2.5 × 10(-5) at receiving power of ?10 dBm. After propagating along a 25-km-long SMF, a receiving power sensitivity of ?7.5 dBm is required to obtain a lowest BER of 2.5 × 10(-5), and a power penalty of 2.7 dB is observed when comparing with the back-to-back transmission.

  10. Electromagnetic wave analogue of an electronic diode

    International Nuclear Information System (INIS)

    Shadrivov, Ilya V; Powell, David A; Kivshar, Yuri S; Fedotov, Vassili A; Zheludev, Nikolay I

    2011-01-01

    An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of rotation of the polarization state and is also a key component in optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by an extraordinarily strong nonlinear wave propagation effect in the same way as the electronic diode function is provided by the nonlinear current characteristic of a semiconductor junction. The effect exploited in this new electromagnetic diode is an intensity-dependent polarization change in an artificial chiral metamolecule. This microwave effect exceeds a similar optical effect previously observed in natural crystals by more than 12 orders of magnitude and a direction-dependent transmission that differs by a factor of 65.

  11. Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes

    Science.gov (United States)

    Meneghini, Matteo; Zhu, Dandan; Humphreys, Colin J.; Berti, Marina; Gasparotto, Andrea; Cesca, Tiziana; Vinattieri, Anna; Bogani, Franco; Meneghesso, Gaudenzio; Zanoni, Enrico

    2015-10-01

    This paper describes a detailed analysis of the effects of high temperatures on the optical performance and structural characteristics of GaN-based LED structures with a high threading dislocation density. Results show that, as a consequence of storage at 900 °C in N2 atmosphere, the samples exhibit: (i) an increase in the efficiency of GaN and quantum-well luminescence, well correlated to an increase in carrier lifetime; (ii) a decrease in the parasitic luminescence peaks related to Mg acceptors, which is correlated to the reduction in the concentration of Mg in the p-type region, detected by Secondary Ion Mass Spectroscopy (SIMS); (iii) a diffusion of acceptor (Mg) atoms to the quantum well region; (iv) a reduction in the yield of Rutherford Backscattering Spectrometry (RBS)-channeling measurements, possibly due to a partial re-arrangement of the dislocations, which is supposed to be correlated to the increase in radiative efficiency (see (i)).

  12. Diode-Laser Induced Fluorescence Spectroscopy of an Optically Thick Plasma in Combination with Laser Absorption Spectroscopy

    Directory of Open Access Journals (Sweden)

    S. Nomura

    2013-01-01

    Full Text Available Distortion of laser-induced fluorescence profiles attributable to optical absorption and saturation broadening was corrected in combination with laser absorption spectroscopy in argon plasma flow. At high probe-laser intensity, saturated absorption profiles were measured to correct probe-laser absorption. At low laser intensity, nonsaturated absorption profiles were measured to correct fluorescence reabsorption. Saturation broadening at the measurement point was corrected using a ratio of saturated to non-saturated broadening. Observed LIF broadening and corresponding translational temperature without correction were, respectively, 2.20±0.05 GHz and 2510±100 K and corrected broadening and temperature were, respectively, 1.96±0.07 GHz and 1990±150 K. Although this correction is applicable only at the center of symmetry, the deduced temperature agreed well with that obtained by LAS with Abel inversion.

  13. Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Meneghini, Matteo, E-mail: matteo.meneghini@dei.unipd.it; Meneghesso, Gaudenzio; Zanoni, Enrico [University of Padova, Department of Information Engineering, via Gradenigo 6/B, 35131 Padova (Italy); Zhu, Dandan; Humphreys, Colin J. [University of Cambridge, Dept. Materials Science & Metallurgy, Cambridge, CB2 3QZ (United Kingdom); Berti, Marina; Gasparotto, Andrea; Cesca, Tiziana [University of Padova, Department of Physics, and Astronomy via Marzolo 8 35131 Padova (Italy); Vinattieri, Anna [University of Florence, Department of Physics, Via Sansone, 1 - 50019 Sesto Fiorentino (Italy); Bogani, Franco [University of Florence, Department of Engineering, Via di Santa Marta, 3, 50139 Firenze (Italy)

    2015-10-15

    This paper describes a detailed analysis of the effects of high temperatures on the optical performance and structural characteristics of GaN-based LED structures with a high threading dislocation density. Results show that, as a consequence of storage at 900 °C in N{sub 2} atmosphere, the samples exhibit: (i) an increase in the efficiency of GaN and quantum-well luminescence, well correlated to an increase in carrier lifetime; (ii) a decrease in the parasitic luminescence peaks related to Mg acceptors, which is correlated to the reduction in the concentration of Mg in the p-type region, detected by Secondary Ion Mass Spectroscopy (SIMS); (iii) a diffusion of acceptor (Mg) atoms to the quantum well region; (iv) a reduction in the yield of Rutherford Backscattering Spectrometry (RBS)-channeling measurements, possibly due to a partial re-arrangement of the dislocations, which is supposed to be correlated to the increase in radiative efficiency (see (i))

  14. Impact of thermal treatment on the optical performance of InGaN/GaN light emitting diodes

    Directory of Open Access Journals (Sweden)

    Matteo Meneghini

    2015-10-01

    Full Text Available This paper describes a detailed analysis of the effects of high temperatures on the optical performance and structural characteristics of GaN-based LED structures with a high threading dislocation density. Results show that, as a consequence of storage at 900 °C in N2 atmosphere, the samples exhibit: (i an increase in the efficiency of GaN and quantum-well luminescence, well correlated to an increase in carrier lifetime; (ii a decrease in the parasitic luminescence peaks related to Mg acceptors, which is correlated to the reduction in the concentration of Mg in the p-type region, detected by Secondary Ion Mass Spectroscopy (SIMS; (iii a diffusion of acceptor (Mg atoms to the quantum well region; (iv a reduction in the yield of Rutherford Backscattering Spectrometry (RBS-channeling measurements, possibly due to a partial re-arrangement of the dislocations, which is supposed to be correlated to the increase in radiative efficiency (see (i.

  15. Liquid diode

    International Nuclear Information System (INIS)

    1976-01-01

    The liquid diode is designed for a flowmeter chamber which has an inlet and an outlet duct, and a flow chamber with a cross-section which is greater than inlet. In the space between the inlet and outlet are two screens with a number of spheres, which may be of different sizes and weights. The screen on the inlet side is smaller than that at the outlet, so that the spheres are able to block the inlet under reverse flow conditions, but do not block the outlet. The system functions as a non-return valve. (G.C.)

  16. Generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser in a cascade of nonlinear crystals

    DEFF Research Database (Denmark)

    Hansen, Anders Kragh; Jensen, Ole Bjarlin; Sumpf, Bernd

    2014-01-01

    Many applications, e.g., within biomedicine stand to benefit greatly from the development of diode laser-based multi- Watt efficient compact green laser sources. The low power of existing diode lasers in the green area (about 100 mW) means that the most promising approach remains nonlinear...... frequency conversion of infrared tapered diode lasers. Here, we describe the generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser, itself yielding 10 W at 1063 nm. This SHG is performed in single pass through a cascade of two PPMgO:LN crystals with re...... power of 3.5 W corresponds to a power enhancement greater than 2 compared to SHG in each of the crystals individually and is the highest visible output power generated by frequency conversion of a single diode laser. Such laser sources provide the necessary pump power for biophotonics applications...

  17. Developments in lead-salt diode lasers

    International Nuclear Information System (INIS)

    Partin, D.L.

    1985-01-01

    Lead-chalcogenide diode lasers are useful as mid-infrared sources (2-1/2 <λ<30 μm), but have generally operated CW below 100K. A new materials system, PbEuSeTe, has been used to fabricate diode lasers operating from 10K (at 6.5 μm wavelength) up to 174K CW (at 4.4 μm) and up to 280K pulsed (at 3.8 μm). These are large optical cavity single quantum well devices grown by molecular beam epitaxy. These are currently the highest diode laser operating temperatures ever achieved at these wavelengths to our knowledge. Single ended output powers as high as 1 mW single mode (5 mW multimode) have been attained from mesa stripe diodes. These characteristics make these devices attractive for long wavelength fiber optic sensor/communications systems. The performance limits of these devices are discussed

  18. Synthesis Alq3and effect of concentration iton optical and electrical performance of Organic Light Emitting Diodes withtwo single-layer mixture and multilayer structures

    Directory of Open Access Journals (Sweden)

    Mohammadreza Jafari

    2017-05-01

    Full Text Available In this article, organic light emitting diode with the two structures of ITO / PEDOT: PSS /PVK/Alq3/PBD/Al and ITO/PEDOT: PSS/PVK: Alq3: PBD/Alwith different concentrations were fabricated. The effects of concentration of Alq3 complex on the characteristics of diodes, which were made, were studied. Layers with the same weight percentages PVK, PBD and different wt. %Alq3 by spin coating on PEDOT: PSS layer was deposited. Current - voltage characteristic curve - and luminescence (El were studied. Experimental results showed that by increasing the concentration of the Alq3complexin both structure, luminescence increased and the operating voltage is reduced.

  19. Modeling of thermal and optical effects in dental pulp during the irradiation with neodymium and diode lasers; Modelagem dos efeitos termicos e opticos na polpa dentaria durante a irradiacao com os lasers de diodo de neodimio

    Energy Technology Data Exchange (ETDEWEB)

    Farhat, Patricia Bahls de Almeida

    2003-07-01

    During the development of applications of high intensity lasers in the enamel and dentine, adverse thermal effects into the entire dental structure, including the pulp, must be verified. The measurement of the temperature in the intact pulp, however, is not a solved problem. For this purpose, models have been used frequently, using extracted teeth, with pulpal cavities filled with materials that simulate only thermal properties of the pulp. Current models, however, do not simulate optical properties of the pulp, not taking the remaining radiation in the pulp chamber into account. The aim of this study was to verify if the remaining radiation from neodymium and diode lasers that reach the pulp chamber, at the models using extracted bovine teeth, can cause local thermal effects. For this purpose, two models were developed, using extracted bovine teeth with their pulp chambers filled with water (simulating pulp thermal characteristics) without (model 1) and with (model 2) an optical absorbent. Models were radiated with 1 W. The obtained results show that, for both lasers, the temperature rise in model 2 pulp chamber is: up to 11 % higher than in the model 1 when the enamel is radiated; and up to 37% higher than in the model 1 when dentine is radiated (1 mm from the pulp), indicating that the level of the remaining radiation is relevant for the construction of models excited by the neodymium and diode lasers. (author)

  20. Laser semiconductor diode integrated with frequency doubler

    International Nuclear Information System (INIS)

    Tighineanu, I.; Dorogan, V.; Suruceanu, G.

    2003-01-01

    The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

  1. Processes for design, construction and utilisation of arrays of light-emitting diodes and light-emitting diode-coupled optical fibres for multi-site brain light delivery.

    Science.gov (United States)

    Bernstein, Jacob G; Allen, Brian D; Guerra, Alexander A; Boyden, Edward S

    2015-05-01

    Optogenetics enables light to be used to control the activity of genetically targeted cells in the living brain. Optical fibers can be used to deliver light to deep targets, and LEDs can be spatially arranged to enable patterned light delivery. In combination, arrays of LED-coupled optical fibers can enable patterned light delivery to deep targets in the brain. Here we describe the process flow for making LED arrays and LED-coupled optical fiber arrays, explaining key optical, electrical, thermal, and mechanical design principles to enable the manufacturing, assembly, and testing of such multi-site targetable optical devices. We also explore accessory strategies such as surgical automation approaches as well as innovations to enable low-noise concurrent electrophysiology.

  2. Experimental investigation of the optical injection locking dynamics in single section quantum-dash Fabry-Pérot laser diode for packet based clock recovery applications

    NARCIS (Netherlands)

    Maldonado-Basilio, R.; Parra-Cetina, J.; Latkowski, S.; Calabretta, N.; Landais, P.

    2012-01-01

    An experimental study of the dynamics of a quantum-dash Fabry-Pérot passively mode-locked laser diode is presented. Firstly, the switching on and off characteristic times of the mode-locking mechanism with pulsed biasing current are assessed. Secondly, the locking and unlocking characteristic times

  3. Optical gain and absorption of 420 nm InGaN-based laser diodes grown on m-plane GaN substrate

    KAUST Repository

    Shen, Chao

    2014-01-01

    Segmented contact method was utilized to measure the gain and absorption spectra at below and above threshold for 420nm m-plane InGaN/GaN laser diode with a comparatively higher peak modal gain of 29.2 cm-1.

  4. The Beam Characteristics of High Power Diode Laser Stack

    Science.gov (United States)

    Gu, Yuanyuan; Fu, Yueming; Lu, Hui; Cui, Yan

    2018-03-01

    Direct diode lasers have some of the most attractive features of any laser. They are very efficient, compact, wavelength versatile, low cost, and highly reliable. However, the full utilization of direct diode lasers has yet to be realized. However, the poor quality of diode laser beam itself, directly affect its application ranges, in order to better use of diode laser stack, need a proper correction of optical system, which requires accurate understanding of the diode laser beam characteristics. Diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. Therefore diode laser cladding will open a new field of repairing for the damaged machinery parts which must contribute to recycling of the used machines and saving of cost.

  5. Photometric flow injection determination of phosphate on a PDMS microchip using an optical detection system assembled with an organic light emitting diode and an organic photodiode.

    Science.gov (United States)

    Liu, Rong; Ishimatsu, Ryoichi; Yahiro, Masayuki; Adachi, Chihaya; Nakano, Koji; Imato, Toshihiko

    2015-01-01

    A compact photometric detector was constructed from an organic light emitting diode (OLED) based on a europium complex, europium(diben-zoylmethanato)3(bathophenanthroline) (Eu(DBM)3bath), as the light source and an organic photodiode (OPD) fabricated from a hetero-junction of two layers of copper phthalocyanine (CuPc)/fullerene (C60) as the photo-detector on a microchip prepared from poly(dimethylsiloxan) (PDMS) and was applied to the determination of phosphate. The OLED and the OPD were fabricated by a vapor deposition method on an indium tin oxide (ITO) coated glass substrate with the following layered structure; Glass (0.7 mm)/ITO (110 nm)/4,4'-bis[N-(1-naphthyl)-N-phenyl amino]-biphenyl (α-NPD) (30 nm)/4,4'-di(N-carbazolyl)biphenyl (CBP): Eu(3+) (8 wt%, 30 nm)/bathocuproine (BCP) (30 nm)/aluminum tris(8-hydroxyquinoline) (Alq3) (25 nm)/magnesium and silver (MgAg) (100 nm)/Ag (10nm) and Glass (0.7 mm)/ITO (110 nm)/CuPc (35 nm)/C60 (50 nm)/BCP (10 nm)/Ag (50 nm), respectively. The OLED based on the europium complex emitted a sharp light at the wavelength of 612 nm with a full width at half maximum (FWHM) of 8 nm. The performance of the photometric detector assembled was evaluated based on measurements of the absorbance of different concentrations of malachite green (MG) solutions for a batch system with 1cm long path length. The molar absorptive coefficient of the MG solution, calculated from the photocurrent of the OPD, was in good agreement with the value reported in the literature. A microchip with two inlets and one outlet U-shaped channel was prepared by a conventional photolithograph method. The OLED and the OPD were configured so as to face each other through the PDMS microchip in parallel in order to align the light axis of the OLED and the OPD with the flow cell (optical path length of 5mm), which was located at the end of outlet. For the determination of phosphate, an ion-association reaction between MG and a molybdenum-phosphate complex was utilized

  6. Fabrication of p-{beta}-Fe{sub 1{minus}x}Mn{sub x}Si{sub 2}/nSi heterostructure diode and their electrical and optical properties

    Energy Technology Data Exchange (ETDEWEB)

    Takada, T; Katsumata, H; Makita, Y; Kobayashi, N; Hasegawa, M; Uekusa, S

    1997-07-01

    The authors report on the fabrication of p-type {beta}-FeSi{sub 2} layers on n-type Si(100) substrates and the investigation of their p-n diode characteristics. Since the undoped {beta}-FeSi{sub 2} layers have typically shown n-type conductivity, the p-type layers were formed by the introduction of Mn impurity into {beta}-FeSi{sub 2} layers using two types of doping methods; one is an Electron-Beam-Deposition (EBD) procedure of Fe{sub 1{minus}x}Mn{sub x}Si{sub 2} (x < {approximately}0.1) at room temperature and subsequent annealing at 900 C for 1--120 min, where FeSi{sub 2} ingots added with Mn({approximately}10%) were used as starting materials. The other is a {sup 55}Mn{sup +}-implantation into {beta}-FeSi{sub 2} layers formed by EBD and subsequent annealing at 850 C for 1--120 min. From van der Pauw measurements, p-type {beta}-Fe{sub 1{minus}x}Mn{sub x}Si{sub 2} layers with the resistivity of 0.0036--0.031 {Omega}{center{underscore}dot}cm and hole mobility of 11.9--89.0 cm{sup 2}/V{center{underscore}dot}sec were found to be successfully formed on n-Si substrates by both doping methods. The p-n diode characteristics of these heterostructure diodes were investigated by I-V and C-V measurements. The results indicate that the carrier distribution does not agree with either ideal one-side step or one-side slop junctions, although optical transmittance and reflectance measurements indicate that the silicide/Si interface is of good quality.

  7. Static thermo-optic instability in double-pass fiber amplifiers

    DEFF Research Database (Denmark)

    Lægsgaard, Jesper

    2016-01-01

    A coupled-mode formalism, earlier used to describe transverse mode instabilities in single-pass optical fiber amplifiers, is extended to the case of double-pass amplifiers. Contrary to the single-pass case, it is shown that the thermo-optic nonlinearity can couple light at the same frequency...... between the LP01 and LP11 modes, leading to a static deformation of the output beam profile. This novel phenomenon is caused by the interaction of light propagating in either direction with thermo-optic index perturbations caused by light propagating in the opposite direction. The threshold power...... for the static deformation is found to be several times lower than what is typically found for the dynamic modal instabilities observed in single-pass amplifiers. (C) 2016 Optical Society of America...

  8. Diode lasers: From laboratory to industry

    Science.gov (United States)

    Nasim, Hira; Jamil, Yasir

    2014-03-01

    The invention of first laser in 1960 triggered the discovery of several new families of lasers. A rich interplay of different lasing materials resulted in a far better understanding of the phenomena particularly linked with atomic and molecular spectroscopy. Diode lasers have gone through tremendous developments on the forefront of applied physics that have shown novel ways to the researchers. Some interesting attributes of the diode lasers like cost effectiveness, miniature size, high reliability and relative simplicity of use make them good candidates for utilization in various practical applications. Diode lasers are being used by a variety of professionals and in several spectroscopic techniques covering many areas of pure and applied sciences. Diode lasers have revolutionized many fields like optical communication industry, medical science, trace gas monitoring, studies related to biology, analytical chemistry including elemental analysis, war fare studies etc. In this paper the diode laser based technologies and measurement techniques ranging from laboratory research to automated field and industry have been reviewed. The application specific developments of diode lasers and various methods of their utilization particularly during the last decade are discussed comprehensively. A detailed snapshot of the current state of the art diode laser applications is given along with a detailed discussion on the upcoming challenges.

  9. A novel diode laser system for photodynamic therapy

    DEFF Research Database (Denmark)

    Samsøe, E.; Andersen, P. E.; Petersen, P.

    2001-01-01

    In this paper a novel diode laser system for photodynamic therapy is demonstrated. The system is based on linear spatial filtering and optical phase conjugate feedback from a photorefractive BaTiO3 crystal. The spatial coherence properties of the diode laser are significantly improved. The system...

  10. Coaxial foilless diode

    OpenAIRE

    Long Kong; QingXiang Liu; XiangQiang Li; ShaoMeng Wang

    2014-01-01

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode par...

  11. Long pulse diode experiments

    Science.gov (United States)

    McClenahan, Charles R.; Weber, Gerald J.; Omalley, Martin W.; Stewart, Joseph; Rinehart, Larry F.; Buttram, Malcolm T.

    1990-10-01

    A diode employing a thermionic cathode has produced 80 A beams at 200 kV for at least 6 microseconds. Moreover, the diode operates at rates as high as 1 Hz. EGUN simulations of the experimental geometry agree with the experiments. Finally, simulation of a proposed diode geometry predicts a 1 kA, 500 kV beam.

  12. Direct-current polarization characteristics of various AlGaAs laser diodes

    Science.gov (United States)

    Fuhr, P. L.

    1984-01-01

    Polarization characteristics of AlGaAs laser diodes having various device geometries have been measured. Measurements were performed with the laser diodes operating under dc conditions. Results show that laser diodes having different device geometries have optical outputs that exhibit varying degrees of polarization purity. Implications of this result, with respect to incoherent polarization-beam combining, are addressed.

  13. Effect of carbon content on formation of bimodal microstructure and mechanical properties of low-carbon steels subjected to heavy-reduction single-pass hot/warm deformation

    Energy Technology Data Exchange (ETDEWEB)

    Park, Hyung-Won, E-mail: wonipark@iis.u-tokyo.ac.jp [Graduate School of Engineering, The University of Tokyo, Komaba 4-6-1, Meguro-ku 153-8505, Tokyo (Japan); Yanagimoto, Jun [Institute of Industrial Science, The University of Tokyo, Komaba 4-6-1, Meguro-ku 153-8505, Tokyo (Japan)

    2014-06-01

    A compression test simulating heavy-reduction single-pass rolling was conducted to investigate the microstructural evolution based on the formation of a bimodal structure and the mechanical properties of 0.01% and 0.1% carbon steels and niobium steel. When thermomechanical processing was conducted near and above the critical transformation temperature (A{sub c3}), microstructures of all steels were significantly refined and consisted of equiaxed grains without elongated grains. Nevertheless, these microstructures showed weak or no formation of the bimodal structure or coarse grains with decreasing carbon content, while they showed bimodal structure formation when 0.2% carbon steel was used in our previous research. The average grain size of Nb steel was about 2 μm and its microstructure was uniformly refined. These may be attributed to a decrease in the number of nucleation sites with decreasing carbon content in low-carbon steels and the occurrence of nucleation at grain boundaries as well as in grain interiors in Nb steel during processing. Mechanical properties of all steels deformed above the critical transformation temperature exhibited high performance characteristics with superior strength and marked elongation. Their fractographs indicated ductile fracture, which was revealed by SEM observation after a tensile test.

  14. Crosstalk of HgCdTe LWIR n-on-p diode arrays

    International Nuclear Information System (INIS)

    Sun Yinghui; Zhang Bo; Yu Meifang; Liao Qingjun; Zhang Yan; Wen Xin; Jiang Peilu; Hu Xiaoning; Dai Ning

    2009-01-01

    Crosstalk of HgCdTe long-wavelength infrared (LWIR) n-on-p diode arrays was measured using scanning laser microscopy. During the measurement, HgCdTe diode arrays with different diode pitches were frontside illuminated by a He-Ne laser at liquid nitrogen temperature and room temperature. The experimental results show that crosstalk between the nearest neighboring diodes decreases exponentially as the diode pitch increases, and the factors that affect the obtained crosstalk are presented and analyzed. Crosstalk out of the nominal diode area (optically sensitive area) is also measured and discussed.

  15. Visible optical radiation generates bactericidal effect applicable for inactivation of health care associated germs demonstrated by inactivation of E. coli and B. subtilis using 405-nm and 460-nm light emitting diodes

    Science.gov (United States)

    Hönes, Katharina; Stangl, Felix; Sift, Michael; Hessling, Martin

    2015-07-01

    The Ulm University of Applied Sciences is investigating a technique using visible optical radiation (405 nm and 460 nm) to inactivate health-hazardous bacteria in water. A conceivable application could be point-of-use disinfection implementations in developing countries for safe drinking water supply. Another possible application field could be to provide sterile water in medical institutions like hospitals or dental surgeries where contaminated pipework or long-term disuse often results in higher germ concentrations. Optical radiation for disinfection is presently mostly used in UV wavelength ranges but the possibility of bacterial inactivation with visible light was so far generally disregarded. One of the advantages of visible light is, that instead of mercury arc lamps, light emitting diodes could be used, which are commercially available and therefore cost-efficient concerning the visible light spectrum. Furthermore they inherit a considerable longer life span than UV-C LEDs and are non-hazardous in contrast to mercury arc lamps. Above all there are specific germs, like Bacillus subtilis, which show an inactivation resistance to UV-C wavelengths. Due to the totally different deactivation mechanism even higher disinfection rates are reached, compared to Escherichia coli as a standard laboratory germ. By 460 nm a reduction of three log-levels appeared with Bacillus subtilis and a half log-level with Escherichia coli both at a dose of about 300 J/cm². By the more efficient wavelength of 405 nm four and a half log-levels are reached with Bacillus subtilis and one and a half log-level with Escherichia coli also both at a dose of about 300 J/cm². In addition the employed optical setup, which delivered a homogeneous illumination and skirts the need of a stirring technique to compensate irregularities, was an important improvement compared to previous published setups. Evaluated by optical simulation in ZEMAX® the designed optical element provided proven

  16. Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

    Science.gov (United States)

    Casey, Megan C.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Topper, Alyson D.; Campola, Michael J.; Label, Kenneth A.

    2017-01-01

    In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.

  17. Fabrication of organic light emitting diode using Molybdenum ...

    Indian Academy of Sciences (India)

    65

    out by measuring sheet resistance, optical transmittance and surface ... role in the organic light-emitting diode (OLED) performance because it determines the .... coated glass by thermal vacuum deposition method and optimize it by using ...

  18. Method and system for homogenizing diode laser pump arrays

    Science.gov (United States)

    Bayramian, Andy J

    2013-10-01

    An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

  19. Active Stabilization of a Diode Laser Injection Lock

    OpenAIRE

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-01-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudde...

  20. The Fuge Tube Diode Array Spectrophotometer

    Science.gov (United States)

    Arneson, B. T.; Long, S. R.; Stewart, K. K.; Lagowski, J. J.

    2008-01-01

    We present the details for adapting a diode array UV-vis spectrophotometer to incorporate the use of polypropylene microcentrifuge tubes--fuge tubes--as cuvettes. Optical data are presented validating that the polyethylene fuge tubes are equivalent to the standard square cross section polystyrene or glass cuvettes generally used in…

  1. Fluorescence lifetime imaging using light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Kennedy, Gordon T; Munro, Ian; Poher, Vincent; French, Paul M W; Neil, Mark A A [Blackett Laboratory, Imperial College London, South Kensington Campus, London SW7 2AZ (United Kingdom); Elson, Daniel S [Institute of Biomedical Engineering, Imperial College London, South Kensington Campus, London SW7 2AZ (United Kingdom); Hares, Jonathan D [Kentech Instruments Ltd, Unit 9, Hall Farm Workshops, South Moreton, Didcot, Oxfordshire, OX11 9AG (United Kingdom)], E-mail: gordon.kennedy@imperial.ac.uk

    2008-05-07

    We demonstrate flexible use of low cost, high-power light emitting diodes as illumination sources for fluorescence lifetime imaging (FLIM). Both time-domain and frequency-domain techniques have been implemented at wavelengths spanning the range 450-640 nm. Additionally, we demonstrate optically sectioned fluorescence lifetime imaging by combining structured illumination with frequency-domain FLIM.

  2. Microring Diode Laser for THz Generation

    DEFF Research Database (Denmark)

    Mariani, S.; Andronico, A.; Favero, I.

    2013-01-01

    We report on the modeling and optical characterization of AlGaAs/InAs quantum-dot microring diode lasers designed for terahertz (THz) difference frequency generation (DFG) between two whispering gallery modes (WGMs) around 1.3 $\\mu$m. In order to investigate the spectral features of this active...

  3. Optics

    CERN Document Server

    Mathieu, Jean Paul

    1975-01-01

    Optics, Parts 1 and 2 covers electromagnetic optics and quantum optics. The first part of the book examines the various of the important properties common to all electromagnetic radiation. This part also studies electromagnetic waves; electromagnetic optics of transparent isotropic and anisotropic media; diffraction; and two-wave and multi-wave interference. The polarization states of light, the velocity of light, and the special theory of relativity are also examined in this part. The second part is devoted to quantum optics, specifically discussing the classical molecular theory of optical p

  4. Influences of point defects on electrical and optical properties of InGaN light-emitting diodes at cryogenic temperature

    Science.gov (United States)

    Tu, Yi; Ruan, Yujiao; Zhu, Lihong; Tu, Qingzhen; Wang, Hongwei; Chen, Jie; Lu, Yijun; Gao, Yulin; Shih, Tien-Mo; Chen, Zhong; Lin, Yue

    2018-04-01

    We investigate the cryogenic external quantum efficiency (EQE) for some InGaN light-emitting diodes with different indium contents. We observe a monotonic decrease in EQE with the increasing forward current before the "U-turn" point, beyond which the thermal effect increases the EQE. We discover positive dependences among the droop rate (χ), differential electrical resistance (Rd), and indium content. Also, χ and Rd of individual green samples shift correspondingly during the aging test, when the Mg ions are activated at high injection density and diffuse into the active region. Considering the fact that both In and Mg ions would introduce point defects (PDs), we proposed a model that reveals the mechanism of interplay between PDs and carriers. PDs serve as both energy traps and non-radiative recombination centers. They attract and confine carriers, leading to an increase in Rd and a decrease in EQE.

  5. Characterization of a time-resolved non-contact scanning diffuse optical imaging system exploiting fast-gated single-photon avalanche diode detection

    Energy Technology Data Exchange (ETDEWEB)

    Di Sieno, Laura, E-mail: laura.disieno@polimi.it; Dalla Mora, Alberto; Contini, Davide [Politecnico di Milano, Dipartimento di Fisica, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Wabnitz, Heidrun; Macdonald, Rainer [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Pifferi, Antonio [Politecnico di Milano, Dipartimento di Fisica, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Mazurenka, Mikhail [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Hannoversches Zentrum für Optische Technologien, Nienburger Str. 17, 30167 Hannover (Germany); Hoshi, Yoko [Department of Biomedical Optics, Medical Photonics Research Center, Hamamatsu University School of Medicine, Hamamatsu 431-3192 (Japan); Boso, Gianluca; Tosi, Alberto [Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Becker, Wolfgang [Becker and Hickl GmbH, Nahmitzer Damm 30, 12277 Berlin (Germany); Martelli, Fabrizio [Dipartimento di Fisica e Astronomia dell’Università degli Studi di Firenze, Via G. Sansone 1, Sesto Fiorentino, Firenze 50019 (Italy)

    2016-03-15

    We present a system for non-contact time-resolved diffuse reflectance imaging, based on small source-detector distance and high dynamic range measurements utilizing a fast-gated single-photon avalanche diode. The system is suitable for imaging of diffusive media without any contact with the sample and with a spatial resolution of about 1 cm at 1 cm depth. In order to objectively assess its performances, we adopted two standardized protocols developed for time-domain brain imagers. The related tests included the recording of the instrument response function of the setup and the responsivity of its detection system. Moreover, by using liquid turbid phantoms with absorbing inclusions, depth-dependent contrast and contrast-to-noise ratio as well as lateral spatial resolution were measured. To illustrate the potentialities of the novel approach, the characteristics of the non-contact system are discussed and compared to those of a fiber-based brain imager.

  6. Characterization of a time-resolved non-contact scanning diffuse optical imaging system exploiting fast-gated single-photon avalanche diode detection

    International Nuclear Information System (INIS)

    Di Sieno, Laura; Dalla Mora, Alberto; Contini, Davide; Wabnitz, Heidrun; Macdonald, Rainer; Pifferi, Antonio; Mazurenka, Mikhail; Hoshi, Yoko; Boso, Gianluca; Tosi, Alberto; Becker, Wolfgang; Martelli, Fabrizio

    2016-01-01

    We present a system for non-contact time-resolved diffuse reflectance imaging, based on small source-detector distance and high dynamic range measurements utilizing a fast-gated single-photon avalanche diode. The system is suitable for imaging of diffusive media without any contact with the sample and with a spatial resolution of about 1 cm at 1 cm depth. In order to objectively assess its performances, we adopted two standardized protocols developed for time-domain brain imagers. The related tests included the recording of the instrument response function of the setup and the responsivity of its detection system. Moreover, by using liquid turbid phantoms with absorbing inclusions, depth-dependent contrast and contrast-to-noise ratio as well as lateral spatial resolution were measured. To illustrate the potentialities of the novel approach, the characteristics of the non-contact system are discussed and compared to those of a fiber-based brain imager.

  7. Enhanced performance of 450 nm GaN laser diodes with an optical feedback for high bit-rate visible light communication

    KAUST Repository

    Shamim, Md Hosne Mobarok

    2018-05-07

    First report on significant performance improvement of 450 nm blue edge-emitting laser in terms of optical linewidth (~6.5 times), modulation bandwidth (~16%) and SMSR (~7.4 times) by employing self-injection locking scheme.

  8. Enhanced performance of 450 nm GaN laser diodes with an optical feedback for high bit-rate visible light communication

    KAUST Repository

    Shamim, Md. Hosne Mobarok; Shemis, Mohamed; Shen, Chao; Oubei, Hassan M.; Ng, Tien Khee; Ooi, Boon S.; Khan, Mohammed Zahed Mustafa

    2018-01-01

    First report on significant performance improvement of 450 nm blue edge-emitting laser in terms of optical linewidth (~6.5 times), modulation bandwidth (~16%) and SMSR (~7.4 times) by employing self-injection locking scheme.

  9. Coaxial foilless diode

    Energy Technology Data Exchange (ETDEWEB)

    Kong, Long; Liu, QingXiang; Li, XiangQiang; Wang, ShaoMeng [College of Physical Science and Technology, Southwest Jiaotong University, Chengdu 610031 (China)

    2014-05-15

    A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  10. Coaxial foilless diode

    Directory of Open Access Journals (Sweden)

    Long Kong

    2014-05-01

    Full Text Available A kind of coaxial foilless diode is proposed in this paper, with the structure model and operating principle of the diode are given. The current-voltage relation of the coaxial foilless diode and the effects of structure parameters on the relation are studied by simulation. By solving the electron motion equation, the beam deviation characteristic in the presence of external magnetic field in transmission process is analyzed, and the relationship between transverse misalignment with diode parameters is obtained. These results should be of interest to the area of generation and propagation of radial beam for application of generating high power microwaves.

  11. Optics

    CERN Document Server

    Fincham, W H A

    2013-01-01

    Optics: Ninth Edition Optics: Ninth Edition covers the work necessary for the specialization in such subjects as ophthalmic optics, optical instruments and lens design. The text includes topics such as the propagation and behavior of light; reflection and refraction - their laws and how different media affect them; lenses - thick and thin, cylindrical and subcylindrical; photometry; dispersion and color; interference; and polarization. Also included are topics such as diffraction and holography; the limitation of beams in optical systems and its effects; and lens systems. The book is recommen

  12. A high power gain switched diode laser oscillator and amplifier for the CEBAF polarized electron injector

    International Nuclear Information System (INIS)

    Poelker, M.; Hansknecht, J.

    1996-01-01

    The photocathode in the polarized electron source at Jefferson Lab is illuminated with pulsed laser light from a gain switched diode laser and diode optical amplifier. Laser pulse repetition rates up to 2,000 MHz, optical pulsewidths between 31 and 123 ps, and average power > 100 mW are demonstrated. The laser system is highly reliable and completely remotely controlled

  13. Effect of alcohol vapor treatment on electrical and optical properties of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) films for indium tin oxide-free organic light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Fallahzadeh, Ali, E-mail: afa.phy@gmail.com; Saghaei, Jaber; Yousefi, Mohammad Hassan

    2014-11-30

    Graphical abstract: - Highlights: • A simple alcohol vapor treatment (AVT) technique was applied to enhance the conductivity of PEDOT:PSS films. • Alcohols with one OH group can improve conductivity of PEDOT:PSS films by this technique. • Mechanism of conductivity enhancement of PEDOT:PSS films by AVT method was explained. • ITO-free OLEDs were fabricated using highly conductive AVT PEDOT:PSS films standalone anode. - Abstract: A simple alcohol vapor treatment (AVT) technique was proposed to improve the conductivity of poly(3,4-ethylene dioxythiophene):poly(styrene sulfonate) (PEDOT:PSS) films. In this technique, various alcohols, i.e. methanol, ethanol, 2-propanol and ethylene glycol, were applied to treat the surface of the films formed and then they were annealed. The sheet resistance of PEDOT:PSS films was significantly reduced from 130 kΩ/sq to 60 Ω/sq when treated with methanol vapor. The investigation of the vertical resistance of the films showed that the sample treated with methanol vapor displayed the lowest resistance as well. The mechanism of conductivity enhancement of PEDOT:PSS films through AVT method was explained by surface phase images, UV and IR spectra of PEDOT:PSS films. Optical transmittance spectrum of treated films exhibited that AVT has even enhanced the optical transmittance slightly. Improvement in the morphology, electrical and optical properties of PEDOT:PSS films prompted their applications as a transparent anode in the fabrication of ITO-free organic light-emitting diodes (OLEDs). The OLED manufactured based on methanol-treated PEDOT:PSS films demonstrated the highest luminance.

  14. Quaternary InGaAsSb Thermophotovoltaic Diodes

    International Nuclear Information System (INIS)

    MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

    2006-01-01

    In x Ga 1-x As y Sb 1-y thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E G = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of η TPV = 19.7% and PD =0.58 W/cm 2 respectively for a radiator temperature of T radiator = 950 C, diode temperature of T diode = 27 C, and diode bandgap of E G = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is η TPV = 28% and PD = 0.85W/cm 2 at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V OC is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V OC and thus efficiency is limited by extrinsic recombination processes such as through bulk defects

  15. Effect of nitrogen doping on the structural, optical and electrical properties of indium tin oxide films prepared by magnetron sputtering for gallium nitride light emitting diodes

    Science.gov (United States)

    Tian, Lifei; Cheng, Guoan; Wang, Hougong; Wu, Yulong; Zheng, Ruiting; Ding, Peijun

    2017-01-01

    The indium tin oxide (ITO) films are prepared by the direct current magnetron sputtering technology with an ITO target in a mixture of argon and nitrogen gas at room temperature. The blue transmittance at 455 nm rises from 63% to 83% after nitrogen doping. The resistivity of the ITO film reduces from 4.6 × 10-3 (undoped film) to 5.7 × 10-4 Ω cm (N-doped film). The X-ray photoelectron spectroscopy data imply that the binding energy of the In3d5/2 peak is declined 0.05 eV after nitrogen doping. The high resolution transmission electron microscope images show that the nitrogen loss density of the GaN/ITO interface with N-doped ITO film is smaller than that of the GaN/ITO interface with undoped ITO film. The forward turn-on voltage of gallium nitride light emitting diode reduces by 0.5 V after nitrogen doping. The fabrication of the N-doped ITO film is conducive to modify the N component of the interface between GaN and ITO layer.

  16. Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

    International Nuclear Information System (INIS)

    Li, Baikui; Tang, Xi; Chen, Kevin J.

    2015-01-01

    In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R on and/or threshold voltage V th of the HEMT. The results show that the recovery processes of both dynamic R on and threshold voltage V th of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs

  17. Optical pumping of deep traps in AlGaN/GaN-on-Si HEMTs using an on-chip Schottky-on-heterojunction light-emitting diode

    Energy Technology Data Exchange (ETDEWEB)

    Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk [Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)

    2015-03-02

    In this work, by using an on-chip integrated Schottky-on-heterojunction light-emitting diode (SoH-LED) which is seamlessly integrated with the AlGaN/GaN high electron mobility transistor (HEMT), we studied the effect of on-chip light illumination on the de-trapping processes of electrons from both surface and bulk traps. Surface trapping was generated by applying OFF-state drain bias stress, while bulk trapping was generated by applying positive substrate bias stress. The de-trapping processes of surface and/or bulk traps were monitored by measuring the recovery of dynamic on-resistance R{sub on} and/or threshold voltage V{sub th} of the HEMT. The results show that the recovery processes of both dynamic R{sub on} and threshold voltage V{sub th} of the HEMT can be accelerated by the on-chip SoH-LED light illumination, demonstrating the potentiality of on-chip hybrid opto-HEMTs to minimize the influences of traps during dynamic operation of AlGaN/GaN power HEMTs.

  18. Optical and electrical improvements of semipolar (1 1 −2 2) GaN-based light emitting diodes by Si doping of n-GaN template

    International Nuclear Information System (INIS)

    Lee, Jae-Hwan; Han, Sang-Hyun; Song, Ki-Ryong; Lee, Sung-Nam

    2014-01-01

    Highlights: • In semipolar GaN, Si-doping is effective to reduce out-of plane PSFs toward [1−100]. • Interfacial quality of semipolar QWs was improved by increasing SiH4 flow of n-GaN. • Electrical properties of semipolar GaN were improved by increasing Si doping. • Light output power of semipolar LEDs were increased with SiH4 flow rate of n-type GaN. - Abstract: We report that the performance of semipolar (1 1 −2 2) GaN-based light-emitting diodes (LEDs) was improved by increasing the Si-doping concentration of n-type GaN templates. In-plane and out-of plane high-resolution X-ray diffraction demonstrated that crystal defects such as threading dislocation, partial stacking faults and basal stacking faults, were significantly decreased by increasing the Si-doping concentration. This resulted in the increase of carrier mobility due to reduction of the defect-scattering effect. Furthermore, the quality of InGaN/GaN quantum-well interfaces was improved by increasing the Si-doping concentration of the n-type GaN template. Based on these results, we suggest that the light-output power and operation voltage of semipolar (1 1 −2 2) GaN-based LEDs would be improved by increasing Si doping concentration of n-type GaN templates

  19. Amine-Based Passivating Materials for Enhanced Optical Properties and Performance of Organic-Inorganic Perovskites in Light-Emitting Diodes.

    Science.gov (United States)

    Lee, Seungjin; Park, Jong Hyun; Lee, Bo Ram; Jung, Eui Dae; Yu, Jae Choul; Di Nuzzo, Daniele; Friend, Richard H; Song, Myoung Hoon

    2017-04-20

    The use of hybrid organic-inorganic perovskites in optoelectronic applications are attracting an interest because of their outstanding characteristics, which enable a remarkable enhancement of device efficiency. However, solution-processed perovskite crystals unavoidably contain defect sites that cause hysteresis in perovskite solar cells (PeSCs) and blinking in perovskite light-emitting diodes (PeLEDs). Here, we report significant beneficial effects using a new treatment based on amine-based passivating materials (APMs) to passivate the defect sites of methylammonium lead tribromide (MAPbBr 3 ) through coordinate bonding between the nitrogen atoms and undercoordinated lead ions. This treatment greatly enhanced the PeLED's efficiency, with an external quantum efficiency (EQE) of 6.2%, enhanced photoluminescence (PL), a lower threshold for amplified spontaneous emission (ASE), a longer PL lifetime, and enhanced device stability. Using confocal microscopy, we observed the cessation of PL blinking in perovskite films treated with ethylenediamine (EDA) due to passivation of the defect sites in the MAPbBr 3 .

  20. Influence of helium-ion bombardment on the optical properties of ZnO nanorods/p-GaN light-emitting diodes

    Science.gov (United States)

    Alvi, Naveed Ul Hassan; Hussain, Sajjad; Jensen, Jen; Nur, Omer; Willander, Magnus

    2011-12-01

    Light-emitting diodes (LEDs) based on zinc oxide (ZnO) nanorods grown by vapor-liquid-solid catalytic growth method were irradiated with 2-MeV helium (He+) ions. The fabricated LEDs were irradiated with fluencies of approximately 2 × 1013 ions/cm2 and approximately 4 × 1013 ions/cm2. Scanning electron microscopy images showed that the morphology of the irradiated samples is not changed. The as-grown and He+-irradiated LEDs showed rectifying behavior with the same I-V characteristics. Photoluminescence (PL) measurements showed that there is a blue shift of approximately 0.0347 and 0.082 eV in the near-band emission (free exciton) and green emission of the irradiated ZnO nanorods, respectively. It was also observed that the PL intensity of the near-band emission was decreased after irradiation of the samples. The electroluminescence (EL) measurements of the fabricated LEDs showed that there is a blue shift of 0.125 eV in the broad green emission after irradiation and the EL intensity of violet emission approximately centered at 398 nm nearly disappeared after irradiations. The color-rendering properties show a small decrease in the color-rendering indices of 3% after 2 MeV He+ ions irradiation.

  1. Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Xiong, Zhuo; Shang, Liang; Tian, Yingdong; Zhao, Yun; Zhou, Pengyu; Wang, Junxi; Li, Jinmin [Semiconductor Lighting Technology Research and Development Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)

    2014-07-07

    The light-emitting diodes (LEDs) with single, twin, triple, and quadruple photonic crystals (PCs) on p-GaN are fabricated by multiple-exposure nanosphere-lens lithography (MENLL) process utilizing the focusing behavior of polystyrene spheres. Such a technique is easy and economical for use in fabricating compound nano-patterns. The optimized tilted angle is decided to be 26.6° through mathematic calculation to try to avoid the overlay of patterns. The results of scanning electron microscopy and simulations reveal that the pattern produced by MENLL is a combination of multiple ovals. Compared to planar-LED, the light output power of LEDs with single, twin, triple, and quadruple PCs is increased by 14.78%, 36.03%, 53.68%, and 44.85% under a drive current 350 mA, respectively. Furthermore, all PC-structures result in no degradation of the electrical properties. The stimulated results indicate that the highest light extraction efficiency of LED with the clover-shape triple PC is due to the largest scattering effect on propagation of light from GaN into air.

  2. Ultrafast photoconductor detector-laser-diode transmitter

    International Nuclear Information System (INIS)

    Wang, C.L.; Davis, B.A.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.

    1987-01-01

    We report the results of an experiment in which we used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When we irradiated the neutron-damaged Cr-doped GaAs detector with 17-MeV electron beams, the temporal response was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. We are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

  3. Ultrafast photoconductive detector-laser-diode transmitter

    International Nuclear Information System (INIS)

    Wang, C.L.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.; Davis, B.A.

    1987-01-01

    The authors report the results of an experiment in which they used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When they irradiated the neutron-damaged Cr-doped Ga/As detector with 17-MeV electron beams, the temporal response of was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. They are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

  4. Vortex diode jet

    Science.gov (United States)

    Houck, Edward D.

    1994-01-01

    A fluid transfer system that combines a vortex diode with a jet ejector to transfer liquid from one tank to a second tank by a gas pressurization method having no moving mechanical parts in the fluid system. The vortex diode is a device that has a high resistance to flow in one direction and a low resistance to flow in the other.

  5. Optics

    CERN Document Server

    Fincham, W H A

    2013-01-01

    Optics: Eighth Edition covers the work necessary for the specialization in such subjects as ophthalmic optics, optical instruments and lens design. The text includes topics such as the propagation and behavior of light; reflection and refraction - their laws and how different media affect them; lenses - thick and thin, cylindrical and subcylindrical; photometry; dispersion and color; interference; and polarization. Also included are topics such as diffraction and holography; the limitation of beams in optical systems and its effects; and lens systems. The book is recommended for engineering st

  6. Suppressed power saturation due to optimized optical confinement in 9xx nm high-power diode lasers that use extreme double asymmetric vertical designs

    Science.gov (United States)

    Kaul, T.; Erbert, G.; Maaßdorf, A.; Knigge, S.; Crump, P.

    2018-03-01

    Broad area lasers with novel extreme double asymmetric structure (EDAS) vertical designs featuring increased optical confinement in the quantum well, Γ, are shown to have improved temperature stability without compromising series resistance, internal efficiency or losses. Specifically, we present here vertical design considerations for the improved continuous wave (CW) performance of devices operating at 940 nm, based on systematically increasing Γ from 0.26% to 1.1%, and discuss the impact on power saturation mechanisms. The results indicate that key power saturation mechanisms at high temperatures originate in high threshold carrier densities, which arise in the quantum well at low Γ. The characteristic temperatures, T 0 and T 1, are determined under short pulse conditions and are used to clarify the thermal contribution to power limiting mechanisms. Although increased Γ reduces thermal power saturation, it is accompanied by increased optical absorption losses in the active region, which has a significant impact on the differential external quantum efficiency, {η }{{diff}}. To quantify the impact of internal optical losses contributed by the quantum well, a resonator length-dependent simulation of {η }{{diff}} is performed and compared to the experiment, which also allows the estimation of experimental values for the light absorption cross sections of electrons and holes inside the quantum well. Overall, the analysis enables vertical designs to be developed, for devices with maximized power conversion efficiency at high CW optical power and high temperatures, in a trade-off between absorption in the well and power saturation. The best balance to date is achieved in devices using EDAS designs with {{Γ }}=0.54 % , which deliver efficiencies of 50% at 14 W optical output power at an elevated junction temperature of 105 °C.

  7. Fourier-transform optical microsystems

    Science.gov (United States)

    Collins, S. D.; Smith, R. L.; Gonzalez, C.; Stewart, K. P.; Hagopian, J. G.; Sirota, J. M.

    1999-01-01

    The design, fabrication, and initial characterization of a miniature single-pass Fourier-transform spectrometer (FTS) that has an optical bench that measures 1 cm x 5 cm x 10 cm is presented. The FTS is predicated on the classic Michelson interferometer design with a moving mirror. Precision translation of the mirror is accomplished by microfabrication of dovetailed bearing surfaces along single-crystal planes in silicon. Although it is miniaturized, the FTS maintains a relatively high spectral resolution, 0.1 cm-1, with adequate optical throughput.

  8. High-power green diode laser systems for biomedical applications

    DEFF Research Database (Denmark)

    Müller, André

    propagation parameters and therefore efficiently increases the brightness of compact and cost-effective diode laser systems. The condition of overlapping beams is an ideal scenario for subsequent frequency conversion. Based on sum-frequency generation of two beam combined diode lasers a 3.2 fold increase...... output power of frequency doubled single emitters is limited by thermal effects potentially resulting in laser degradation and failure. In this work new concepts for power scaling of visible diode laser systems are introduced that help to overcome current limitations and enhance the application potential....... Implementing the developed concept of frequency converted, beam combined diode laser systems will help to overcome the high pump thresholds for ultrabroad bandwidth titanium sapphire lasers, leading towards diode based high-resolution optical coherence tomography with enhanced image quality. In their entirety...

  9. Next generation diode lasers with enhanced brightness

    Science.gov (United States)

    Ried, S.; Rauch, S.; Irmler, L.; Rikels, J.; Killi, A.; Papastathopoulos, E.; Sarailou, E.; Zimer, H.

    2018-02-01

    High-power diode lasers are nowadays well established manufacturing tools in high power materials processing, mainly for tactile welding, surface treatment and cladding applications. Typical beam parameter products (BPP) of such lasers range from 30 to 50 mm·mrad at several kilowatts of output power. TRUMPF offers a product line of diode lasers to its customers ranging from 150 W up to 6 kW of output power. These diode lasers combine high reliability with small footprint and high efficiency. However, up to now these lasers are limited in brightness due to the commonly used spatial and coarse spectral beam combining techniques. Recently diode lasers with enhanced brightness have been presented by use of dense wavelength multiplexing (DWM). In this paper we report on TRUMPF's diode lasers utilizing DWM. We demonstrate a 2 kW and a 4 kW system ideally suited for fine welding and scanner welding applications. The typical laser efficiency is in the range of 50%. The system offers plug and play exchange of the fiber beam delivery cable, multiple optical outputs and integrated cooling in a very compact package. An advanced control system offers flexible integration in any customer's shop floor environment and includes industry 4.0 capabilities (e.g. condition monitoring and predictive maintenance).

  10. Electrical and optical properties of poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) and AuCl3-doped reduced graphene oxide/single-walled carbon nanotube films for ultraviolet light-emitting diodes.

    Science.gov (United States)

    Lee, Byeong Ryong; Lee, Jae Hoon; Kim, Kyeong Heon; Kim, Hee-Dong; Kim, Tae Geun

    2014-12-01

    We report the effects of poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) ( PSS) and gold chloride (AuCl) co-doping on the electrical and optical properties of reduced graphene oxide (RGO)/single-walled carbon nanotube (SWNT) films fabricated by dipcoating methods. The RGO/SWNT films were doped with both AuCl3 dissolved in nitromethane and PSS hole injection layers by spin coating to improve their electrical properties by increasing the work function of the RGO/SWNT films, thereby reducing the Schottky barrier height between the RGO/SWNT and p-GaN films. As a result, we obtained a reduced sheet resistance of 851.9 Ω/Ω and a contact resistance of 1.97 x 10(-1) Ω x cm2, together with a high transmittance of 84.1% at 380 nm. The contact resistance of these films should be further reduced to fully utilize the feature of the electrode scheme proposed in this work, but the current result suggests its potential use as a transparent conductive electrode for ultraviolet light-emitting diodes.

  11. Diode-laser-illuminated automotive lamp systems

    Science.gov (United States)

    Marinelli, Michael A.; Remillard, Jeffrey T.

    1998-05-01

    We have utilized the high brightness of state-of-the-art diode laser sources, and a variety of emerging optical technologies to develop a new class of thin, uniquely styled automotive brake and signal lamps. Using optics based on thin (5 mm) plastic sheets, these lamps provide appearance and functional advantages not attainable with traditional automotive lighting systems. The light is coupled into the sheets using a 1 mm diameter glass fiber, and manipulated using refraction and reflection from edges, surfaces, and shaped cut-outs. Light can be extracted with an efficiency of approximately 50% and formed into a luminance distribution that meets the Society of Automotive Engineers (SAE) photometric requirements. Prototype lamps using these optics have been constructed and are less than one inch in thickness. Thin lamps reduce sheet metal costs, complexity, material usage, weight, and allow for increased trunk volume. In addition, these optics enhance lamp design flexibility. When the lamps are not energized, they can appear body colored, and when lighted, the brightness distribution across the lamp can be uniform or structured. A diode laser based brake lamp consumes seven times less electrical power than one using an incandescent source and has instant on capability. Also, diode lasers have the potential to be 10-year/150,000 mile light sources.

  12. Active stabilization of a diode laser injection lock

    Energy Technology Data Exchange (ETDEWEB)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep [Department of Physics, University of Washington, P.O. Box 351560, Seattle, Washington 98195-1560 (United States)

    2016-06-15

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  13. Active stabilization of a diode laser injection lock.

    Science.gov (United States)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-06-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  14. Active stabilization of a diode laser injection lock

    International Nuclear Information System (INIS)

    Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

    2016-01-01

    We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

  15. Study of Absorption Characteristics of the Total Saponins from Radix Ilicis Pubescentis in an In Situ Single-Pass Intestinal Perfusion (SPIP Rat Model by Using Ultra Performance Liquid Chromatography (UPLC

    Directory of Open Access Journals (Sweden)

    Guojun Kuang

    2017-11-01

    Full Text Available In contrast to the extensively reported therapeutic activities, far less attention has been paid to the intestinal absorption of the total saponins from Radix Ilicis Pubescentis (in Chinese Mao-Dong-Qing, MDQ. This study aimed to investigate the intestinal absorption characteristics of ilexgenin A (C1, ilexsaponin A1 (C2, ilexsaponin B1 (C3, ilexsaponin B2 (C4, ilexsaponin B3 (DC1, and ilexoside O (DC2 when administrated with the total saponins from MDQ (MDQ-TS. An UPLC method for simultaneous determination of C1, C2, C3, C4, DC1, and DC2 in intestinal outflow perfusate was developed and validated. The absorption characteristics of MDQ-TS were investigated by evaluating the effects of intestinal segments, drug concentration, P-glycoprotein (P-gp inhibitor (verapomil, endocytosis inhibitor (amantadine and ethylene diamine tetraacetic acid (EDTA, tight junction modulator on the intestinal transportation of MDQ-TS by using a single-pass intestinal perfusion (SPIP rat model, and the influence of co-existing components on the intestinal transport of the six saponins was discussed. The results showed that effective apparent permeability (Papp of C1, C2, C3, C4, and DC2 administrated in MDQ-TS form had no segment-dependent changes at low and middle dosage levels. C1, C2, C3, D4, DC1, and DC2 administrated in MDQ-TS form all exhibited excellent transmembrane permeability with Papp > 0.12 × 10−2 cm·min−1. Meanwhile, Papp and effective absorption rate constant (Ka values for the most saponins showed concentration dependence and saturation characteristics. After combining with P-gp inhibitor of verapamil, Papp of C2, C3, and DC1 in MDQ-TS group was significantly increased up to about 2.3-fold, 1.4-fold, and 3.4-fold, respectively in comparison to that of non-verapamil added group. Verapamil was found to improve the absorption of C2, C3, and DC1, indicating the involvement of an active transport mechanism in the absorption process. Compared with the

  16. A practical guide to handling laser diode beams

    CERN Document Server

    Sun, Haiyin

    2015-01-01

    This book offers the reader a practical guide to the control and characterization of laser diode beams.  Laser diodes are the most widely used lasers, accounting for 50% of the global laser market.  Correct handling of laser diode beams is the key to the successful use of laser diodes, and this requires an in-depth understanding of their unique properties. Following a short introduction to the working principles of laser diodes, the book describes the basics of laser diode beams and beam propagation, including Zemax modeling of a Gaussian beam propagating through a lens.  The core of the book is concerned with laser diode beam manipulations: collimating and focusing, circularization and astigmatism correction, coupling into a single mode optical fiber, diffractive optics and beam shaping, and manipulation of multi transverse mode beams.  The final chapter of the book covers beam characterization methods, describing the measurement of spatial and spectral properties, including wavelength and linewidth meas...

  17. Powerful infrared emitting diodes

    Directory of Open Access Journals (Sweden)

    Kogan L. M.

    2012-02-01

    Full Text Available Powerful infrared LEDs with emission wavelength 805 ± 10, 870 ± 20 and 940 ± 10 nm developed at SPC OED "OPTEL" are presented in the article. The radiant intensity of beam diode is under 4 W/sr in the continuous mode and under 100 W/sr in the pulse mode. The radiation power of wide-angle LEDs reaches 1 W in continuous mode. The external quantum efficiency of emission IR diodes runs up to 30%. There also has been created infrared diode modules with a block of flat Fresnel lenses with radiant intensity under 70 W/sr.

  18. Ion diode diagnostics to resolve beam quality issues

    Energy Technology Data Exchange (ETDEWEB)

    Bluhm, H; Buth, L; Hoppe, P [Forschungszentrum Karlsruhe (Germany). Institut fuer Neutronenphysik und Reaktortechnik; and others

    1997-12-31

    Various diagnostic methods and instruments are under development at the Forschungszentrum Karlsruhe to measure important physical quantities in the accelerating gap of high power diodes on KALIF with a high spatial and temporal resolution. The methods include optical spectroscopy, refractive index measurements, dispersion interferometry, and high resolution energy analysis. The setup of these diagnostic tools and the first results obtained for applied and self-magnetically insulated diodes are presented. (author). 6 figs., 5 refs.

  19. Powering laser diode systems

    CERN Document Server

    Trestman, Grigoriy A

    2017-01-01

    This Tutorial Text discusses the competent design and skilled use of laser diode drivers (LDDs) and power supplies (PSs) for the electrical components of laser diode systems. It is intended to help power-electronic design engineers during the initial design stages: the choice of the best PS topology, the calculation of parameters and components of the PS circuit, and the computer simulation of the circuit. Readers who use laser diode systems for research, production, and other purposes will also benefit. The book will help readers avoid errors when creating laser systems from ready-made blocks, as well as understand the nature of the "mystical failures" of laser diodes (and possibly prevent them).

  20. Safety of light emitting diodes in toys.

    Science.gov (United States)

    Higlett, M P; O'Hagan, J B; Khazova, M

    2012-03-01

    Light emitting diodes (LEDs) are increasingly being used in toys. An assessment methodology is described for determining the accessible emission limits for the optical radiation from the toys, which takes account of expected use and reasonably foreseeable misuse of toys. Where data are available, it may be possible to assess the toy from the data sheet alone. If this information is not available, a simple measurement protocol is proposed.

  1. Safety of light emitting diodes in toys

    International Nuclear Information System (INIS)

    Higlett, M P; O'Hagan, J B; Khazova, M

    2012-01-01

    Light emitting diodes (LEDs) are increasingly being used in toys. An assessment methodology is described for determining the accessible emission limits for the optical radiation from the toys, which takes account of expected use and reasonably foreseeable misuse of toys. Where data are available, it may be possible to assess the toy from the data sheet alone. If this information is not available, a simple measurement protocol is proposed.

  2. Orthogonal linear polarization tunable-beat ring laser with a superluminescent diode

    Energy Technology Data Exchange (ETDEWEB)

    Takahashi, Y.; Yoshino, T. [Department of Electronic Engineering, Faculty of Engineering, Gunma University, 1-5-1 Tenjin-cho, Kiryu, Gunma 376 (Japan)

    1997-09-01

    An orthogonal linear polarization operated ring laser with a superluminescent diode has been demonstrated to generate a tunable optical beat signal. The ring cavity contains a superluminescent diode as the optical gain medium, Faraday rotators, and a variable phase retarder (Babinet-Soleil compensator). By controlling the retarder, we changed the beat frequency in the range from a few tens of megahertz to 100 MHz. {copyright} 1997 Optical Society of America

  3. Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy

    KAUST Repository

    Lorenz, K.; Alves, E.; Roqan, Iman S.; O’ Donnell, K. P.; Nishikawa, A.; Fujiwara, Y.; Boćkowski, M.

    2010-01-01

    Eu-doped GaN was grown by organometallic vapor phase epitaxy at temperatures from 900 to 1100 °C. Eu incorporation is influenced by temperature with the highest concentration found for growth at 1000 °C. In all samples, Eu is incorporated entirely on substitutional Ga sites with a slight displacement which is highest (∼0.2 Å) in the sample grown at 900 °C and mainly directed along the c-axis. The major optical Eu3+ centers are identical for in situdoped and ion-implanted samples after high temperature and pressure annealing. The dominant Eu3+luminescence lines are attributed to isolated, substitutional Eu.

  4. Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy

    KAUST Repository

    Lorenz, K.

    2010-09-16

    Eu-doped GaN was grown by organometallic vapor phase epitaxy at temperatures from 900 to 1100 °C. Eu incorporation is influenced by temperature with the highest concentration found for growth at 1000 °C. In all samples, Eu is incorporated entirely on substitutional Ga sites with a slight displacement which is highest (∼0.2 Å) in the sample grown at 900 °C and mainly directed along the c-axis. The major optical Eu3+ centers are identical for in situdoped and ion-implanted samples after high temperature and pressure annealing. The dominant Eu3+luminescence lines are attributed to isolated, substitutional Eu.

  5. Magnetically insulated H- diodes

    International Nuclear Information System (INIS)

    Fisher, A.; Bystritskii, V.; Garate, E.; Prohaska, R.; Rostoker, N.

    1993-01-01

    At the Univ. of California, Irvine, the authors have been studying the production of intense H - beams using pulse power techniques for the past 7 years. Previously, current densities of H - ions for various diode designs at UCI have been a few A/cm 2 . Recently, they have developed diodes similar to the coaxial design of the Lebedev Physical Institute, Moscow, USSR, where current densities of up to 200 A/cm 2 were reported using nuclear activation of a carbon target. In experiments at UCI employing the coaxial diode, current densities of up to 35 A/cm 2 from a passive polyethylene cathode loaded with TiH 2 have been measured using a pinhole camera and CR-39 track recording plastic. The authors have also been working on a self-insulating, annular diode which can generate a directed beam of H - ions. In the annular diode experiments a plasma opening switch was used to provide a prepulse and a current path which self-insulated the diode. These experiments were done on the machine APEX, a 1 MV, 50 ns, 7 Ω pulseline with a unipolar negative prepulse of ∼ 100 kV and 400 ns duration. Currently, the authors are modifying the pulseline to include an external LC circuit which can generate a bipolar, 150 kV, 1 μs duration prepulse (similar prepulse characteristic as in the Lebedev Institute experiments cited above)

  6. Kilowatt average power 100 J-level diode pumped solid state laser

    Czech Academy of Sciences Publication Activity Database

    Mason, P.; Divoký, Martin; Ertel, K.; Pilař, Jan; Butcher, T.; Hanuš, Martin; Banerjee, S.; Phillips, J.; Smith, J.; De Vido, M.; Lucianetti, Antonio; Hernandez-Gomez, C.; Edwards, C.; Mocek, Tomáš; Collier, J.

    2017-01-01

    Roč. 4, č. 4 (2017), s. 438-439 ISSN 2334-2536 R&D Projects: GA MŠk LO1602; GA MŠk LM2015086 Institutional support: RVO:68378271 Keywords : diode-pumped * solid state * laser Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 7.727, year: 2016

  7. Experimental evidence for Raman-induced limits to efficient squeezing in optical fibers

    DEFF Research Database (Denmark)

    Dong, R.; Heersink, J.; Corney, J.

    2008-01-01

    We report new experiments on polarization squeezing using ultrashort photonic pulses in a single pass of a birefringent fiber. We measure what is to our knowledge a record squeezing of -6.8 +/- 0.3 dB in optical fibers which when corrected for linear losses is -10.4 +/- 0.8 dB. The measured polar...

  8. Spectroscopic amplifier for pin diode

    International Nuclear Information System (INIS)

    Alonso M, M. S.; Hernandez D, V. M.; Vega C, H. R.

    2014-10-01

    The photodiode remains the basic choice for the photo-detection and is widely used in optical communications, medical diagnostics and field of corpuscular radiation. In detecting radiation it has been used for monitoring radon and its progeny and inexpensive spectrometric systems. The development of a spectroscopic amplifier for Pin diode is presented which has the following characteristics: canceler Pole-Zero (P/Z) with a time constant of 8 μs; constant gain of 57, suitable for the acquisition system; 4th integrator Gaussian order to waveform change of exponential input to semi-Gaussian output and finally a stage of baseline restorer which prevents Dc signal contribution to the next stage. The operational amplifier used is the TLE2074 of BiFET technology of Texas Instruments with 10 MHz bandwidth, 25 V/μs of slew rate and a noise floor of 17 nv/(Hz)1/2. The integrated circuit has 4 operational amplifiers and in is contained the total of spectroscopic amplifier that is the goal of electronic design. The results show like the exponential input signal is converted to semi-Gaussian, modifying only the amplitude according to the specifications in the design. The total system is formed by the detector, which is the Pin diode, a sensitive preamplifier to the load, the spectroscopic amplifier that is what is presented and finally a pulse height analyzer (Mca) which is where the spectrum is shown. (Author)

  9. Effect of V-pits embedded InGaN/GaN superlattices on optical and electrical properties of GaN-based green light-emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shengjun [School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072 (China); School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai 200240 (China); Liu, Xingtong [School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072 (China)

    2017-05-15

    We investigated effects of V-pits embedded InGaN/GaN superlattices (SL) on optical and electrical properties of high power green LEDs by changing the number of SL period and SL growth temperature. Surface morphology of V-pits embedded InGaN/GaN SL with various periods and growth temperatures was evaluated by using atomic force microscopy (AFM). It was found that density and size of V-pit increase with decreasing SL growth temperature and increasing SL periods. Experimental studies using scanning electron microscopy (SEM) equipped with cathodoluminescence (CL) indicated that SL with larger V-pits appear to be more effective in suppressing the lateral diffusion of carriers into threading dislocations (TD). Compared to c-plane quantum wells, narrower quantum wells on the V-pit sidewall were clearly observed by performing high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The external quantum efficiency (EQE) and the efficiency droop of green LEDs grown on underlying SL with larger V-pits are improved at high injection current regime, which is attributed to a more efficient hole injection into multiple quantum well, and also to a higher V-pit potential barrier height that could more effectively suppress the lateral diffusion of carriers into non-radiative recombination centers of TDs. (copyright 2016 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  10. Electrical, spectral and optical performance of yellow-green and amber micro-pixelated InGaN light-emitting diodes

    Science.gov (United States)

    Gong, Z.; Liu, N. Y.; Tao, Y. B.; Massoubre, D.; Xie, E. Y.; Hu, X. D.; Chen, Z. Z.; Zhang, G. Y.; Pan, Y. B.; Hao, M. S.; Watson, I. M.; Gu, E.; Dawson, M. D.

    2012-01-01

    Micro-pixelated InGaN LED arrays operating at 560 and 600 nm, respectively, are demonstrated for what the authors believe to be the first time. Such devices offer applications in areas including bioinstrumentation, visible light communications and optoelectronic tweezers. The devices reported are based on new epitaxial structures, retaining conventional (0 0 0 1) orientation, but incorporating electron reservoir layers which enhance the efficiency of radiative combination in the active regions. A measured output optical power density up to 8 W cm-2 (4.4 W cm-2) has been achieved from a representative pixel of the yellow-green (amber) LED array, substantially higher than that from conventional broad-area reference LEDs fabricated from the same wafer material. Furthermore, these micro-LEDs can sustain a high current density, up to 4.5 kA cm-2, before thermal rollover. A significant blueshift of the emission wavelength with increasing injection current is observed, however. This blueshift saturates at 45 nm (50 nm) for the yellow-green (amber) LED array, and numerical simulations have been used to gain insight into the responsible mechanisms in this microstructured format of device. In the relatively low-current-density regime (screening of the piezoelectric field by the injected carriers and the band-filling effect, whereas in the high-current regime, it is mainly due to band-filling. Further development of the epitaxial wafer material is expected to improve the current-dependent spectral stability.

  11. Investigation of MIM Diodes for RF Applications

    KAUST Repository

    Khan, Adnan

    2015-05-01

    Metal Insulator Metal (MIM) diodes that work on fast mechanism of tunneling have been used in a number of very high frequency applications such as (Infra-Red) IR detectors and optical Rectennas for energy harvesting. Their ability to operate under zero bias condition as well as the possibility of realizing them through printing makes them attractive for (Radio Frequency) RF applications. However, MIM diodes have not been explored much for RF applications. One reason preventing their widespread RF use is the requirement of a very thin oxide layer essential for the tunneling operation that requires sophisticated nano-fabrication processes. Another issue is that the reliability and stable performance of MIM diodes is highly dependent on the surface roughness of the metallic electrodes. Finally, comprehensive RF characterization has not been performed for MIM diodes reported in the literature, particularly from the perspective of their integration with antennas as well as their rectification abilities. In this thesis, various metal deposition methods such as sputtering, electron beam evaporation, and Atomic Layer Deposition (ALD) are compared in pursuit of achieving low surface roughness. It is worth mentioning here that MIM diodes realized through ALD method have been presented for the first time in this thesis. Amorphous metal alloy have also been investigated in terms of their low surface roughness. Zinc-oxide has been investigated for its suitability as a thin dielectric layer for MIM diodes. Finally, comprehensive RF characterization of MIM diodes has been performed in two ways: 1) by standard S-parameter methods, and 2) by investigating their rectification ability under zero bias operation. It is concluded from the Atomic Force Microscopy (AFM) imaging that surface roughness as low as sub 1 nm can be achieved reliably from crystalline metals such as copper and platinum. This value is comparable to surface roughness achieved from amorphous alloys, which are non

  12. Generation conditions of CW Diode Laser Sustained Plasma

    Science.gov (United States)

    Nishimoto, Koji; Matsui, Makoto; Ono, Takahiro

    2016-09-01

    Laser sustained plasma was generated using 1 kW class continuous wave diode laser. The laser beam was focused on the seed plasma generated by arc discharge in 1 MPa xenon lamp. The diode laser has advantages of high energy conversion efficiency of 80%, ease of maintenance, compact size and availability of conventional quartz based optics. Therefore, it has a prospect of further development compared with conventional CO2 laser. In this study, variation of the plasma shape caused by laser power is observed and also temperature distribution in the direction of plasma radius is measured by optical emission spectroscopy.

  13. System and method for high power diode based additive manufacturing

    Energy Technology Data Exchange (ETDEWEB)

    El-Dasher, Bassem S.; Bayramian, Andrew; Demuth, James A.; Farmer, Joseph C.; Torres, Sharon G.

    2018-01-02

    A system is disclosed for performing an Additive Manufacturing (AM) fabrication process on a powdered material forming a substrate. The system may make use of a diode array for generating an optical signal sufficient to melt a powdered material of the substrate. A mask may be used for preventing a first predetermined portion of the optical signal from reaching the substrate, while allowing a second predetermined portion to reach the substrate. At least one processor may be used for controlling an output of the diode array.

  14. System and method for high power diode based additive manufacturing

    Science.gov (United States)

    El-Dasher, Bassem S.; Bayramian, Andrew; Demuth, James A.; Farmer, Joseph C.; Torres, Sharon G.

    2016-04-12

    A system is disclosed for performing an Additive Manufacturing (AM) fabrication process on a powdered material forming a substrate. The system may make use of a diode array for generating an optical signal sufficient to melt a powdered material of the substrate. A mask may be used for preventing a first predetermined portion of the optical signal from reaching the substrate, while allowing a second predetermined portion to reach the substrate. At least one processor may be used for controlling an output of the diode array.

  15. High power CW output from low confinement asymmetric structure diode laser

    NARCIS (Netherlands)

    Iordache, G.; Buda, M.; Acket, G.A.; Roer, van de T.G.; Kaufmann, L.M.F.; Karouta, F.; Jagadish, C.; Tan, H.H.

    1999-01-01

    High power continuous wave output from diode lasers using low loss, low confinement, asymmetric structures is demonstrated. An asymmetric structure with an optical trap layer was grown by metal organic vapour phase epitaxy. Gain guided 50 µm wide stripe 1-3 mm long diode lasers were studied. 1.8 W

  16. Effect of the Bit Rate on the Pulses of the Laser Diodes | Ayadi ...

    African Journals Online (AJOL)

    The qualities required for Laser Diodes are their spatial and temporal coherence, and their performance in terms modulation. This paper presents the effect data rate of optical pulses delivered by diode laser using software COMSIS. Two types of modulation have been considered: direct modulation and external modulation.

  17. Visible laser and superluminescent diode based free space and underwater communications

    KAUST Repository

    Ooi, Boon S.

    2017-01-30

    We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.

  18. Visible laser and superluminescent diode based free space and underwater communications

    KAUST Repository

    Ooi, Boon S.

    2017-01-01

    We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.

  19. Active graphene-silicon hybrid diode for terahertz waves.

    Science.gov (United States)

    Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

    2015-05-11

    Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

  20. Simplified atom trap using a single microwave modulated diode laser

    International Nuclear Information System (INIS)

    Newbury, N.R.; Myatt, C.J.; Wieman, C.E.

    1993-01-01

    We have demonstrated microwave modulation of a diode laser which is operated with optical feedback from a diffraction grating. By directly modulating the diode laser current at frequencies up to 6.8 GHz, we observed 2-30% of the laser power in a single sideband for 20mW of microwave power. Using such a diode laser modulated at 6.6GHz, we have trapped 87 Rb in a vapor cell. With 10mW of microwave power, the number of trapped atoms was only 15% smaller than the number obtained using two lasers in the conventional manner. A microwave modulated diode laser should also be useful for driving stimulated Raman transitions between the hyperfine levels of Rb or Cs

  1. Diode laser pumping

    International Nuclear Information System (INIS)

    Skagerlund, L.E.

    1975-01-01

    A diode laser is pumped or pulsed by a repeated capacitive discharge. A capacitor is periodically charged from a dc voltage source via a transformer, the capacitor being discharged through the diode laser via a controlled switching means after one or more charging periods. During a first interval of each charging period the transformer, while unloaded, stores a specific amount of energy supplied from the dc voltage source. During a subsequent interval of the charging period said specific amount of energy is transmitted from the transformer to the capacitor. The discharging of the capacitor takes place during a first interval of a charging period. (auth)

  2. V-shaped resonators for addition of broad-area laser diode arrays

    Science.gov (United States)

    Liu, Bo; Liu, Yun; Braiman, Yehuda Y.

    2012-12-25

    A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

  3. Investigation of Diode Pumped Alkali Laser Atmospheric Transmission Using Tunable Diode Laser Absorption Spectroscopy

    Science.gov (United States)

    2012-09-01

    Optics Letters, 28(23):2336–2338, 2003. 48. Lavan, M. “High Energy Laser Systems for Short Range Defense”. Acta Physica Polonica -Series A General Physics...able diode laser spectrometer for the remote sensing of vehicle emissions”. Spec- trochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 60...P. “A review of recent advances in semiconductor laser based gas mon- itors”. Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy, 54

  4. Deep diode atomic battery

    International Nuclear Information System (INIS)

    Anthony, T.R.; Cline, H.E.

    1977-01-01

    A deep diode atomic battery is made from a bulk semiconductor crystal containing three-dimensional arrays of columnar and lamellar P-N junctions. The battery is powered by gamma rays and x-ray emission from a radioactive source embedded in the interior of the semiconductor crystal

  5. Infrared diode laser spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Civiš, Svatopluk; Cihelka, Jaroslav; Matulková, Irena

    2010-01-01

    Roč. 18, č. 4 (2010), s. 408-420 ISSN 1230-3402 R&D Projects: GA AV ČR IAA400400705 Institutional research plan: CEZ:AV0Z40400503 Keywords : FTIR spectroscopy * absorption spectroscopy * laser diodes Subject RIV: CF - Physical ; Theoretical Chemistry Impact factor: 1.027, year: 2010

  6. Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser

    Science.gov (United States)

    Grave, I.; Kan, S. C.; Griffel, G.; Wu, S. W.; Sa'Ar, A.

    1991-01-01

    A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.

  7. Stabilization of the Absolute Frequency and Phase of a Compact, Low Jitter Modelocked Semiconductor Diode Laser

    National Research Council Canada - National Science Library

    Delfyett, Peter J., Jr

    2005-01-01

    .... This work represents, to our knowledge, the first stabilized modelocked diode laser using PDH that achieves both supermode elimination and optical frequency comb stabilization. The resulting optical comb source may be useful for advanced RF imaging radar for optical sampling in ADC or in novel waveform generation (DAC's).

  8. Spherical distribution structure of the semiconductor laser diode stack for pumping

    International Nuclear Information System (INIS)

    Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

    2011-01-01

    A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere, and the output of every bar is specially off-axis compressed to realize high coupling efficiency. The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium. The efficiency of the hollow light pipe, which is used for semiconductor laser diode stack coupling, is analyzed by geometric optics and ray tracing. Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure. Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system, and guides parameter optimization. Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution. (semiconductor devices)

  9. High-temperature current conduction through three kinds of Schottky diodes

    International Nuclear Information System (INIS)

    Fei, Li; Xiao-Ling, Zhang; Yi, Duan; Xue-Song, Xie; Chang-Zhi, Lü

    2009-01-01

    Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N-Si Schottky diodes, GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I–V–T measurements ranging from 300 to 523 K. For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunnelling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  10. Organic light emitting diodes with spin polarized electrodes

    NARCIS (Netherlands)

    Arisi, E.; Bergenti, I.; Dediu, V.; Loi, M.A.; Muccini, M.; Murgia, M.; Ruani, G.; Taliani, C.; Zamboni, R.

    2003-01-01

    Electrical and optical properties of Alq3 based organic light emitting diodes with normal and spin polarized electrodes are presented. Epitaxial semitransparent highly spin polarized La0.7Sr0.3MnO3 were used as hole injector, substituting the traditional indium tin oxide electrode. A comparison of

  11. Performance of injection-limited polymer light-emitting diodes

    NARCIS (Netherlands)

    Blom, P.W.M.; Woudenberg, T.V.; Huiberts, H.; Jabbour, GE; Carter, SA; Kido, J; Lee, ST; Sariciftci, NS

    2002-01-01

    The electro-optical characteristics of a polymer light emitting diode (PLED) with a strongly reduced hole injection have been investigated. The device consists of a poly-p-phenylene vinylene semiconductor with a Ag hole injecting contact, which has an injection barrier of about 1 eV. It is observed

  12. Optical modeling of induction-linac driven free-electron lasers

    International Nuclear Information System (INIS)

    Scharlemann, E.T.; Fawley, W.M.

    1986-01-01

    The free-electron laser (FEL) simulation code FRED, developed at Lawrence Livermore National Laboratory (LLNL) primarily to model single-pass FEL amplifiers driven by induction linear accelerators, is described. The main emphasis is on the modeling of optical propagation in the laser and on the differences between the requirements for modeling rf-linac-driven vs. induction-linac-driven FELs. Examples of optical guiding and mode cleanup are presented for a 50 μm FEL

  13. Comparison of laser diode response to pulsed electrical and radiative excitations

    International Nuclear Information System (INIS)

    Baggio, J.; Rainsant, J.M.; D'hose, C.; Lalande, P.; Musseau, O.; Leray, J.L.

    1996-01-01

    The authors have studied the electrical and optical response of two laser diodes under transient irradiation. Both diodes exhibit a positive photocurrent, which adds to the bias current, and a decrease of the optical power until extinction when dose rate is increased. Direct carrier generation in the laser cavity is a second order phenomena. The diode overall response is driven by both the substrate photocurrent and the transient conduction of current confinement regions, which decrease the net current density in the cavity and switches-off the laser emission. This behavior is in good agreement with pulsed electrical characterizations and 2D simulations

  14. Diode pumped solid state laser by two diodes

    International Nuclear Information System (INIS)

    Li Mingzhong; Zhang Xiaomin; Liang Yue; Man Yongzai; Zhou Pizhang

    1995-01-01

    A Nd: YLF laser is pumped by home-made quantum well diode lasers. Datum of laser output energy 60 μJ and peak power 120 mw are observed at wavelength 1.047 μm. On the same pumping condition, the output power synchronously pumped by two diodes is higher than the total output power pumped by two diodes separately. The fluctuation is <3%. The results agree with theoretical analysis

  15. High brightness diode lasers controlled by volume Bragg gratings

    Science.gov (United States)

    Glebov, Leonid

    2017-02-01

    Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

  16. Spin-Wave Diode

    Directory of Open Access Journals (Sweden)

    Jin Lan (兰金

    2015-12-01

    Full Text Available A diode, a device allowing unidirectional signal transmission, is a fundamental element of logic structures, and it lies at the heart of modern information systems. The spin wave or magnon, representing a collective quasiparticle excitation of the magnetic order in magnetic materials, is a promising candidate for an information carrier for the next-generation energy-saving technologies. Here, we propose a scalable and reprogrammable pure spin-wave logic hardware architecture using domain walls and surface anisotropy stripes as waveguides on a single magnetic wafer. We demonstrate theoretically the design principle of the simplest logic component, a spin-wave diode, utilizing the chiral bound states in a magnetic domain wall with a Dzyaloshinskii-Moriya interaction, and confirm its performance through micromagnetic simulations. Our findings open a new vista for realizing different types of pure spin-wave logic components and finally achieving an energy-efficient and hardware-reprogrammable spin-wave computer.

  17. Quaternary InGaAsSb Thermophotovoltaic Diode Technology

    International Nuclear Information System (INIS)

    M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

    2005-01-01

    Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency (η TPV ) and a power density (PD) of η TPV = 19% and PD=0.58 W/cm 2 were measured for T radiator = 950 C and T diode = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be η TPV = 26% and PD = 0.75 W/cm 2 . These limits are extended to η TPV = 30% and PD = 0.85W/cm 2 if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are ∼10

  18. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  19. High-power dual-wavelength external-Cavity diode laser based on tapered amplifier with tunable terahertz frequency difference

    DEFF Research Database (Denmark)

    Chi, Mingjun; Jensen, Ole Bjarlin; Petersen, Paul Michael

    2011-01-01

    Tunable dual-wavelength operation of a diode laser system based on a tapered diode amplifier with double-Littrow external-cavity feedback is demonstrated around 800nm. The two wavelengths can be tuned individually, and the frequency difference of the two wavelengths is tunable from 0.5 to 5:0 THz......, this is the highest output power from a dual-wavelength diode laser system operating with tunable terahertz frequency difference. © 2011 Optical Society of America....

  20. Subpicosecond gain dynamics in GaAlAs laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Kesler, M.P.; Ippen, E.P.

    1987-11-30

    Ultrafast gain dynamics in GaAlAs diode amplifiers have been studied using 100 fs optical pulses. Pulse propagation through the amplifier resulted in temporal broadening and pulse shaping due to both gain saturation and material dispersion. Pump-probe experiments indicate the presence of two processes contributing to the gain dynamics but give no evidence of spectral hole burning. A dynamic carrier heating model is presented to explain all of the observed gain nonlinearities, and the implications of our results on the dynamic response of laser diodes are discussed.

  1. Characteristic of laser diode beam propagation through a collimating lens.

    Science.gov (United States)

    Xu, Qiang; Han, Yiping; Cui, Zhiwei

    2010-01-20

    A mathematical model of a laser diode beam propagating through a collimating lens is presented. Wave propagation beyond the paraxial approximation is studied. The phase delay of the laser diode wave in passing through the lens is analyzed in detail. The propagation optical field after the lens is obtained from the diffraction integral by the stationary phase method. The model is employed to predict the light intensity at various beam cross sections, and the computed intensity distributions are in a good agreement with the corresponding measurements.

  2. Development of Schottky diode detectors at Research Institute of Electrical Communication, Tohoku University

    International Nuclear Information System (INIS)

    Mizuno, K.; Ono, S.; Suzuki, T.; Daiku, Y.

    1982-01-01

    Schottky diode detectors are widely used as fast, sensitive submillimeter detectors in plasma physics, radio astronomy, frequency standards and so on. In this paper, the research on submillimeter Schottky diodes at Tohoku University is described. A brief description is given on the theoretical examination of diode parameters for video detection in design and on the fabrication of n/n + GaAs Schottky diode chips. Antennas for Schottky barrier diodes are discussed. Three types of antenna structures have been proposed, and used for whisker-contacted Schottky diodes so far. These are compared with each other for their frequency response and gain. The bicone type antenna is promising because of its larger frequency response, but the optimum design for this type of antenna has not yet sufficiently been obtained. As the application of Schottky barrier diodes, the intensity modulation of submillimeter laser and a quasi-optically coupled harmonic mixer have been studied. The modulation degree of about 4 % for HCN laser output has been so far obtained at the maximum modulation frequency of 2 GHz. Since 1976, a quasi-optically coupled harmonic mixer has been used with a Schottky diode in harmonic mixing between microwaves, millimeter waves, and submillimeter waves. (Wakatsuki, Y.)

  3. Structural, optical spectroscopy, optical conductivity, dielectric ...

    Indian Academy of Sciences (India)

    13

    different methods of preparation [36-41]. The electrical insulator materials with low refractive index and low absorption are needed for various optical devices, such as low loss waveguides, resonators, photonic crystals, distributed Bragg reflectors, light-emitting diodes, passive splitters, biosensors, attenuators and filters ...

  4. Advancements of ultra-high peak power laser diode arrays

    Science.gov (United States)

    Crawford, D.; Thiagarajan, P.; Goings, J.; Caliva, B.; Smith, S.; Walker, R.

    2018-02-01

    Enhancements of laser diode epitaxy in conjunction with process and packaging improvements have led to the availability of 1cm bars capable of over 500W peak power at near-infrared wavelengths (770nm to 1100nm). Advances in cooler design allow for multi-bar stacks with bar-to-bar pitches as low as 350μm and a scalable package architecture enabled a single diode assembly with total peak powers of over 1MegaWatt of peak power. With the addition of micro-optics, overall array brightness greater than 10kW/cm2 was achieved. Performance metrics of barbased diode lasers specifically engineered for high peak power and high brightness at wavelengths and pulse conditions commonly used to pump a variety of fiber and solid-state materials are presented.

  5. High-brightness tapered laser diodes with photonic crystal structures

    Science.gov (United States)

    Li, Yi; Du, Weichuan; Kun, Zhou; Gao, Songxin; Ma, Yi; Tang, Chun

    2018-02-01

    Beam quality of tapered laser diodes is limited by higher order lateral mode. On purpose of optimizing the brightness of tapered laser diodes, we developed a novel design of tapered diodes. This devices based on InGaAs/AlGaAs asymmetry epitaxial structure, containing higher order lateral mode filtering schemes especially photonic crystal structures, which fabricated cost effectively by using standard photolithography and dry etch processes. Meanwhile, the effects of photonic crystal structures on mode control are also investigated theoretically by FDBPM (Finite-Difference Beam Propagation Method) calculation. We achieved a CW optical output power of 6.9W at 940nm for a single emitter with 4 mm cavity length. A nearly diffraction limited beam of M2 ≍1.9 @ 0.5W has been demonstrated, and a highest brightness of β =75MW/(cm2 ·sr) was reached.

  6. Personal neutron diode dosemeter

    International Nuclear Information System (INIS)

    Barthe, J.; Lahaye, T.; Moiseev, T.; Portal, G.

    1993-01-01

    The control and management of neutron doses, received by workers in nuclear power or research facilities, requires a knowledge of cumulated dose equivalent or dose equivalent rate in real time. Individual dosemeters so far developed for this purpose are scarce and not very satisfactory. Passive dosemeters such as TLD systems based on the albedo effect, nuclear emulsions or solid track detectors, do not give sufficiently accurate measurements. Furthermore, the increase in the quality factor and the more restrictive new ICRP recommendations diminish the maximum admissible threshold making currently used systems obsolete. Other than bubble dosemeter systems, based on thermodynamic effects of a superheated gel, no simple electronic device is available at the present time. The development of diode based dosimetric gamma badges, having a size similar to that of credit cards, has stimulated us to design and develop a personal neutron dosemeter based on a double diode system. The results obtained are very encouraging and practical models should become available in the near future. (author)

  7. Polymer light emitting diodes

    International Nuclear Information System (INIS)

    Gautier-Thianche, Emmmanuelle

    1998-01-01

    We study sandwich type semiconducting polymer light emitting diodes; anode/polymer/cathode. ITO is selected as anode, this polymer is a blend of a commercially available polymer with a high hole transport ability: polyvinyl-carbazole and a laser dye: coumarin-515. Magnesium covered with silver is chosen for the anode. We study the influence of polymer thickness and coumarin doping ratio on electroluminescence spectrum, electric characteristics and quantum efficiency. An important drawback is that diodes lifetime remains low. In the second part of our study we determine degradations causes with X-Ray reflectivity experiments. It may be due to ITO very high roughness. We realize a new type of planar electroluminescent device: a channel type electroluminescent device in which polymer layer is inserted into an aluminium channel. Such a device is by far more stable than using classical sandwich structures with the same polymer composition: indeed, charges are generated by internal-field ionization and there is no injection from the electrode to the polymer. This avoids electrochemical reactions at electrodes, thus reducing degradations routes. (author) [fr

  8. Efficient generation of 1.9  W yellow light by cascaded frequency doubling of a distributed Bragg reflector tapered diode

    DEFF Research Database (Denmark)

    Hansen, Anders Kragh; Christensen, Mathias; Noordegraaf, Danny

    2016-01-01

    Watt-level yellow emitting lasers are interesting for medical applications, due to their high hemoglobin absorption, and for efficient detection of certain fluorophores. In this paper, we demonstrate a compact and robust diode-based laser system in the yellow spectral range. The system generates ...... of a laser diode enables the modulation of the pump wavelength by controlling the drive current. This is utilized to achieve a power modulation depth above 90% for the second harmonic light, with a rise time below 40  μs.......Watt-level yellow emitting lasers are interesting for medical applications, due to their high hemoglobin absorption, and for efficient detection of certain fluorophores. In this paper, we demonstrate a compact and robust diode-based laser system in the yellow spectral range. The system generates 1.......9 W of single-frequency light at 562.4 nm by cascaded single-pass frequency doubling of the 1124.8 nm emission from a distributed Bragg reflector (DBR) tapered laser diode. The absence of a free-space cavity makes the system stable over a base-plate temperature range of 30 K. At the same time, the use...

  9. Frequency locking of compact laser-diode modules at 633 nm

    Science.gov (United States)

    Nölleke, Christian; Leisching, Patrick; Blume, Gunnar; Jedrzejczyk, Daniel; Pohl, Johannes; Feise, David; Sahm, Alexander; Paschke, Katrin

    2018-02-01

    This work reports on a compact diode-laser module emitting at 633 nm. The emission frequency can be tuned with temperature and current, while optical feedback of an internal DBR grating ensures single-mode operation. The laser diode is integrated into a micro-fabricated package, which includes optics for beam shaping, a miniaturized optical isolator, and a vapor cell as frequency reference. The achieved absolute frequency stability is below 10-8 , while the output power can be more than 10 mW. This compact absolute frequency-stabilized laser system can replace gas lasers and may be integrated in future quantum technology devices.

  10. Single pass kernel k-means clustering method

    Indian Academy of Sciences (India)

    2016-08-26

    Aug 26, 2016 ... Department of Computer Science and Engineering, Srinivasa Ramanujan Institute of Technology, Anantapur 515701, India; Department of Computer Science and Engineering, Rajeev Gandhi Memorial College of Engineering and Technology, Nandyal 518501, India; Department of Computer Science and ...

  11. Photocathode guns for single pass X-ray FELs

    International Nuclear Information System (INIS)

    Palmer, D.T.

    1997-10-01

    The present state of the art in photoinjector designs will be presented in this review. The authors discuss both proposed and operational photoinjectors with operating frequencies from L-band (1.424 GHz) to X-band (11.424 GHz). Also a novel pulsed DC gun will be presented. All the RF photoinjector discussed here use an emittance compensation scheme to align the different slices of the electron beam to decrease the beams normalized rms emittance

  12. Single pass kernel k-means clustering method

    Indian Academy of Sciences (India)

    paper proposes a simple and faster version of the kernel k-means clustering ... It has been considered as an important tool ... On the other hand, kernel-based clustering methods, like kernel k-means clus- ..... able at the UCI machine learning repository (Murphy 1994). ... All the data sets have only numeric valued features.

  13. Single pass kernel k-means clustering method

    Indian Academy of Sciences (India)

    In unsupervised classification, kernel -means clustering method has been shown to perform better than conventional -means clustering method in ... 518501, India; Department of Computer Science and Engineering, Jawaharlal Nehru Technological University, Anantapur College of Engineering, Anantapur 515002, India ...

  14. Single Pass Collider Memo: Gradient Perturbations of the SLC arc

    Energy Technology Data Exchange (ETDEWEB)

    Weng, W.T.; Sands, M.; /SLAC

    2016-12-16

    As the beam passes through the arcs, the gradient it encounters at each magnet differs from the design value. This deviation may be in part random and in part systematic. In this note we make estimates of the effects to be expected from both kinds of errors.

  15. Efficient concept generating 3.9 W of diffraction-limited green light with spectrally combined tapered diode lasers

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Hasler, Karl-Heinz

    2013-01-01

    -optical and nonlinear conversion efficiencies at maximum performance are 5.7 % and 2.6 %/W, respectively. Due to the intrinsic wavelength stabilization of the diodes we achieve single-mode emission with a sidemode suppression

  16. All-electronic suppression of mode hopping noise in diode lasers

    DEFF Research Database (Denmark)

    Bager, L.

    1990-01-01

    A simple all-electronic stabilization scheme is presented for suppression of external-cavity mode-hopping noise in diode lasers. This excess noise is generated when the laser is subjected to optical feedback and may degrade the overall performance of optical systems including sensors. Suppression...

  17. Seven-laser diode end-pumped Nd

    International Nuclear Information System (INIS)

    Berger, J.; Welch, D.F.; Streifer, W.; Scifres, D.R.; Smith, J.J.; Hoffman, H.J.; Peisley, D.; Radecki, D.

    1988-01-01

    End pumping of solid-state lasers by single semiconductor laser diode arrays (LDAs) is efficient, but the maximum pump power is limited by the source brightness and matching the TEM/sub 00/ Nd:YAG cavity mode. To increase the output power from a solid-state Nd:YAG laser, one option is to employ a multiplicity of LDA to provide more pump power than is available from a single source. The authors report herein a 660-mW cw TEM/sub 00/ Nd:YAG laser, end-pumped by seven LDA, with bundled optical fibers coupling the light from each diode to the Nd:YAG rod end. The maximum electrical-to-optical conversion efficiency attained was 4.7% at 560-mW Nd:YAG output power. The LDAs (SDL-2430-C, 100 μm wide) were mounted on separate thermoelectric coolers to tune emission wavelength to the Nd:YAG absorption bands. The diodes were operated at their rated output power (50,000 h mean time to failure). The 110/125-μm diam 0.37-N.A. fibers were butt coupled to the lasers and glued together into a hexagonal close pack. The authors have obtained the highest average power demonstrated to date in the TEM/sub 00/ mode from a Nd:YAG laser, reliably end-pumped by multiple laser diodes with good efficiency

  18. Interference phenomenon determines the color in an organic light emitting diode

    Science.gov (United States)

    Granlund, Thomas; Pettersson, Leif A. A.; Anderson, Mats R.; Inganäs, Olle

    1997-06-01

    We report on electroluminescence from two-layer organic diodes made of poly(3-methyl-4-octylthiophene) and 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,2,4-oxadiazole films between electrodes of indium tin oxide and Ca/Al. The diodes emitted light in the green-blue range; the electroluminescence spectra varied between diodes with different thicknesses of the polymer and molecular layers. The optical phenomena were simulated with a model accounting for interference effects; simulated results showed that the electroluminescence from the organic diode can be due neither to luminescence of the polymer nor of the molecular layer. These model simulations, together with electrochemical measurements, can be interpreted as evidence for an indirect optical transition at the polymer/molecule interface that only occurs in a strong electric field. We label this transition an electroplex.

  19. Stable CW Single Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

    Science.gov (United States)

    Duerksen, Gary L.; Krainak, Michael A.

    1999-01-01

    Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by tWo methods: 1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element'; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback'. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback.

  20. Atomic spectroscopy with diode lasers

    International Nuclear Information System (INIS)

    Tino, G.M.

    1994-01-01

    Some applications of semiconductor diode lasers in atomic spectroscopy are discussed by describing different experiments performed with lasers emitting in the visible and in the near-infrared region. I illustrate the results obtained in the investigation of near-infrared transitions of atomic oxygen and of the visible intercombination line of strontium. I also describe how two offset-frequency-locked diode lasers can be used to excite velocity selective Raman transitions in Cs. I discuss the spectral resolution, the accuracy of frequency measurements, and the detection sensitivity achievable with diode lasers. (orig.)

  1. Frequency-comb-assisted broadband precision spectroscopy with cascaded diode lasers

    DEFF Research Database (Denmark)

    Liu, Junqiu; Brasch, Victor; Pfeiffer, Martin H. P.

    2016-01-01

    Frequency-comb-assisted diode laser spectroscopy, employing both the accuracy of an optical frequency comb and the broad wavelength tuning range of a tunable diode laser, has been widely used in many applications. In this Letter, we present a novel method using cascaded frequency agile diode lasers......, which allows us to extend the measurement bandwidth to 37.4 THz (1355-1630 nm) at megahertz resolution with scanning speeds above 1 THz/s. It is demonstrated as a useful tool to characterize a broadband spectrum for molecular spectroscopy, and in particular it enables us to characterize the dispersion...

  2. Power Scaling of Nonlinear Frequency Converted Tapered Diode Lasers for Biophotonics

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Hansen, Anders Kragh; Müller, A.

    2014-01-01

    Diode lasers have proven to be versatile light sources for a wide range of applications. Nonlinear frequency conversion of high brightness diode lasers has recently resulted in visible light power levels in the watts range enabling an increasing number of applications within biophotonics. This re...... and efficiency are included. Application examples within pumping of mode-locked Ti:sapphire lasers and implementation of such lasers in optical coherence tomography are presented showing the application potential of these lasers....

  3. Study of 4H-SiC junction barrier Schottky diode using field guard ring termination

    International Nuclear Information System (INIS)

    Feng-Ping, Chen; Yu-Ming, Zhang; Hong-Liang, Lü; Yi-Men, Zhang; Jian-Hua, Huang

    2010-01-01

    This paper reports that the 4H-SiC Schottky barrier diode, PiN diode and junction barrier Schottky diode terminated by field guard rings are designed, fabricated and characterised. The measurements for forward and reverse characteristics have been done, and by comparison with each other, it shows that junction barrier Schottky diode has a lower reverse current density than that of the Schottky barrier diode and a higher forward drop than that of the PiN diode. High-temperature annealing is presented in this paper as well to figure out an optimised processing. The barrier height of 0.79 eV is formed with Ti in this work, the forward drop for the Schottky diode is 2.1 V, with an ideality factor of 3.2, and junction barrier Schottky diode with blocking voltage higher than 400 V was achieved by using field guard ring termination. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  4. Temperature issues with white laser diodes, calculation and approach for new packages

    Science.gov (United States)

    Lachmayer, Roland; Kloppenburg, Gerolf; Stephan, Serge

    2015-01-01

    Bright white light sources are of significant importance for automotive front lighting systems. Today's upper class systems mainly use HID or LED light sources. As a further step laser diode based systems offer a high luminance, efficiency and allow the realization of new dynamic and adaptive light functions and styling concepts. The use of white laser diode systems in automotive applications is still limited to laboratories and prototypes even though announcements of laser based front lighting systems have been made. But the environment conditions for vehicles and other industry sectors differ from laboratory conditions. Therefor a model of the system's thermal behavior is set up. The power loss of a laser diode is transported as thermal flux from the junction layer to the diode's case and on to the environment. Therefor its optical power is limited by the maximum junction temperature (for blue diodes typically 125 - 150 °C), the environment temperature and the diode's packaging with its thermal resistances. In a car's headlamp the environment temperature can reach up to 80 °C. While the difference between allowed case temperature and environment temperature is getting small or negative the relevant heat flux also becomes small or negative. In early stages of LED development similar challenges had to be solved. Adapting LED packages to the conditions in a vehicle environment lead to today's efficient and bright headlights. In this paper the need to transfer these results to laser diodes is shown by calculating the diodes lifetimes based on the presented model.

  5. Long-term Comparison of a Large Spot Vacuum Assisted Handpiece vs the Small Spot Size Traditional Handpiece of the 800 nm Diode Laser.

    Science.gov (United States)

    Youssef, Nour J; Rizk, Alain G; Ibrahimi, Omar A; Tannous, Zeina S

    2017-09-01

    BACKGROUND The 800 nm long-pulsed diode laser machine is safe and effective for permanent hair reduction. Traditionally, most long-pulsed diode lasers used for hair removal had a relatively small spot size. Recently, a long-pulsed diode laser with a large spot size and vacuum assisted suction handpiece was introduced. The treatment parameters of each type of handpiece differ. Short and long-term clinical efficacy, treatment associated pain, and patient satisfaction are important factors to be considered. This study aims to conduct a direct head to head comparison of both handpieces of the 800nm long-pulsed diode laser by evaluating long term hair reduction, treatment associated pain and patient satisfaction. Thirteen subjects were enrolled in this prospective, self-controlled, single-center study of axillary laser hair removal. The study involved 4 treatments using a long pulsed diode laser with a large spot size HS handpiece (single pass), HS handpiece (double pass), and a small spot size ET handpiece according to a randomized choice. The treatment sessions were done at 4-8 week intervals with follow up visits taken at 6 and 12 months after the last treatment session. Hair clearance and thickness analysis were assessed using macro hair count photographs taken at baseline visit, at each treatment session visit and at follow up visits. Other factors including pain, treatment duration, and patients' preference were secondary study endpoints. At 6 months follow up visits after receiving four laser treatments, there was statistically significant hair clearance in the three treatment arms with 66.1 % mean percentage hair reduction with the ET handpiece, 43.6% with the HSS (single pass) and 64.1 % with the HSD (double). However, at one year follow up, the results significantly varied from the 6 months follow up. The mean percentage hair reduction was 57.8% with the ET handpiece treated axillas (n=9), 16.5% with the HSS (single pass) handpiece treated axillas (n=7), and

  6. Laterally injected light-emitting diode and laser diode

    Science.gov (United States)

    Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

    2015-06-16

    A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

  7. High current, high bandwidth laser diode current driver

    Science.gov (United States)

    Copeland, David J.; Zimmerman, Robert K., Jr.

    1991-01-01

    A laser diode current driver has been developed for free space laser communications. The driver provides 300 mA peak modulation current and exhibits an optical risetime of less than 400 ps. The current and optical pulses are well behaved and show minimal ringing. The driver is well suited for QPPM modulation at data rates up to 440 Mbit/s. Much previous work has championed current steering circuits; in contrast, the present driver is a single-ended on/off switch. This results in twice the power efficiency as a current steering driver. The driver electrical efficiency for QPPM data is 34 percent. The high speed switch is realized with a Ku-band GaAsFET transistor, with a suitable pre-drive circuit, on a hybrid microcircuit adjacent to the laser diode.

  8. Quench Propagation Ignition using Single-Mode Diode Laser

    CERN Document Server

    Trillaud, F; Devred, Arnaud; Fratini, M; Leboeuf, D; Tixador, P

    2005-01-01

    The stability of NbTi-based multifilamentary composite wires subjected to local heat disturbances of short durations is studied in pool boiling helium conditions. A new type of heater is being developed to characterize the superconducting to normal state transition. It relies on a single-mode Diode Laser with an optical fiber illuminating the wire surface. This first paper focuses mainly on the feasibility of this new heater technology and eventually discusses the difficulties related to it. A small overview of Diode Lasers and optical fibers revolving around our application is given. Then, we describe the experimental setup, and present some recorded voltage traces of transition and recovery processes. In addition, we present also some energy and Normal Zone Propagation Velocity data and we outline ameliorations that will be done to the system.

  9. Novel optical probe for quantum Hall system

    Indian Academy of Sciences (India)

    to explore Landau levels of a two-dimensional electron gas (2DEG) in modulation doped ... Keywords. Surface photovoltage spectroscopy; quantum Hall effect; Landau levels; edge states. ... An optical fibre carries light from tunable diode laser.

  10. Optical programmable metamaterials

    Science.gov (United States)

    Gong, Cheng; Zhang, Nan; Dai, Zijie; Liu, Weiwei

    2018-02-01

    We suggest and demonstrate the concept of optical programmable metamaterials which can configure the device's electromagnetic parameters by the programmable optical stimuli. In such metamaterials, the optical stimuli produced by a FPGA controlled light emitting diode array can switch or combine the resonance modes which are coupled in. As an example, an optical programmable metamaterial terahertz absorber is proposed. Each cell of the absorber integrates four meta-rings (asymmetric 1/4 rings) with photo-resistors connecting the critical gaps. The principle and design of the metamaterials are illustrated and the simulation results demonstrate the functionalities for programming the metamaterial absorber to change its bandwidth and resonance frequency.

  11. Disruptive laser diode source for embedded LIDAR sensors

    Science.gov (United States)

    Canal, Celine; Laugustin, Arnaud; Kohl, Andreas; Rabot, Olivier

    2017-02-01

    Active imaging based on laser illumination is used in various fields such as medicine, security, defense, civil engineering and in the automotive sector. In this last domain, research and development to bring autonomous vehicles on the roads has been intensified these last years with an emphasis on lidar technology that is probably the key to achieve full automation level. Based on time-of-flight measurements, the profile of objects can be measured together with their location in various conditions, creating a 3D mapping of the environment. To be embedded on a vehicle as advanced driver assistance systems (ADAS), these sensors require compactness, low-cost and reliability, as it is provided by a flash lidar. An attractive candidate, especially with respect to cost reduction, for the laser source integrated in these devices is certainly laser diodes as long as they can provide sufficiently short pulses with a high energy. A recent breakthrough in laser diode and diode driver technology made by Quantel (Les Ulis, France) now allows laser emission higher than 1 mJ with pulses as short as 12 ns in a footprint of 4x5 cm2 (including both the laser diode and driver) and an electrical-to-optical conversion efficiency of the whole laser diode source higher than 25% at this level of energy. The components used for the laser source presented here can all be manufactured at low cost. In particular, instead of having several individual laser diodes positioned side by side, the laser diodes are monolithically integrated on a single semiconductor chip. The chips are then integrated directly on the driver board in a single assembly step. These laser sources emit in the range of 800-1000 nm and their emission is considered to be eye safe when taking into account the high divergence of the output beam and the aperture of possible macro lenses so that they can be used for end consumer applications. Experimental characterization of these state-of-the-art pulsed laser diode sources

  12. All optical wavelength conversion and parametric amplification in Ti:PPLN channel waveguides for telecommunication applications

    Energy Technology Data Exchange (ETDEWEB)

    Nouroozi, Rahman

    2010-10-19

    conversion is based on a polarization maintaining fiber loop configuration. Since both polarization components can be converted in a contra-directional single-pass waveguide, differential group delay (DGD) equalization between them is automatically provided. With such polarization diversity scheme an error-free polarization insensitive conversion of 320 Gb/s differential quaternary phase shift keying (DQPSK) data with signal pulses of 1.4 ps width has been achieved using the packaged and pigtailed cSHG/DFG-based wavelength converter. No significant broadening or distortion of the converted data pulses was observed. This approach results in a tuneable output wavelength of the idler whereas the input signal wavelength can be kept fixed. In a 70 mm long Ti:PPLN channel guide a conversion efficiency of {proportional_to}-7.5 dB has been achieved by 80 mW (20 mW) of coupled pump (control) power level with less than {+-}0.5 dB of residual polarization dependence. The tuning range of the idler covers the whole Cband. However, in contrast to cSHG/DFG, pulse broadening of the converted signal will limit the data rate for cSFG/DFG. For sufficiently high pump power levels wavelength conversion by DFG is accompanied by significant optical parametric amplification (OPA) of the input signal. To increase the fundamental power handling flexibility and to avoid photorefractive effect, a low duty cycle Q-switched diode-pumped-solid-state (DPSS) laser has been used as the fundamental source. With 2.5 W of fundamental peak power {proportional_to}22 dB of signal gain has been measured. (orig.)

  13. Ultra-narrow band diode lasers with arbitrary pulse shape modulation (Conference Presentation)

    Science.gov (United States)

    Ryasnyanskiy, Aleksandr I.; Smirnov, Vadim; Mokhun, Oleksiy; Glebov, Alexei L.; Glebov, Leon B.

    2017-03-01

    Wideband emission spectra of laser diode bars (several nanometers) can be largely narrowed by the usage of thick volume Bragg gratings (VBGs) recorded in photo-thermo-refractive glass. Such narrowband systems, with GHz-wide emission spectra, found broad applications for Diode Pumped Alkali vapor Lasers, optically pumped rare gas metastable lasers, Spin Exchange Optical Pumping, atom cooling, etc. Although the majority of current applications of narrow line diode lasers require CW operation, there are a variety of fields where operation in a different pulse mode regime is necessary. Commercial electric pulse generators can provide arbitrary current pulse profiles (sinusoidal, rectangular, triangular and their combinations). The pulse duration and repetition rate however, have an influence on the laser diode temperature, and therefore, the emitting wavelength. Thus, a detailed analysis is needed to understand the correspondence between the optical pulse profiles from a diode laser and the current pulse profiles; how the pulse profile and duty cycle affects the laser performance (e.g. the wavelength stability, signal to noise ratio, power stability etc.). We present the results of detailed studies of the narrowband laser diode performance operating in different temporal regimes with arbitrary pulse profiles. The developed narrowband (16 pm) tunable laser systems at 795 nm are capable of operating in different pulse regimes while keeping the linewidth, wavelength, and signal-to-noise ratio (>20 dB) similar to the corresponding CW modules.

  14. Thermometric Property of a Diode.

    Science.gov (United States)

    Inman, Fred W.; Woodruff, Dan

    1995-01-01

    Presents a simple way to implement the thermometric property of a semiconductor diode to produce a thermometer with a nearly linear dependence upon temperature over a wide range of temperatures. (JRH)

  15. Enhanced vbasis laser diode package

    Science.gov (United States)

    Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack

    2014-08-19

    A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.

  16. Photo-Detectors Integrated with Resonant Tunneling Diodes

    Directory of Open Access Journals (Sweden)

    José M. L. Figueiredo

    2013-07-01

    Full Text Available We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD. Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR region. The resonant tunneling diode photo-detector (RTD-PD can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTD’s NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems.

  17. Diffractive optical elements for space communication terminals

    OpenAIRE

    Herzig, Hans-Peter; Ehbets, Peter; Teijido, Juan M.; Weible, Kenneth J.; Heimbeck, Hans-Joerg

    2007-01-01

    The potential of diffractive optical elements for advanced laser communication terminals has been investigated. Applications include beam shaping of high- power laser diode arrays, optical filter elements for position detection and hybrid (refractive/diffractive) elements. In addition, we present a design example of a miniaturized terminal including diffractive optics.

  18. Visible high power fiber coupled diode lasers

    Science.gov (United States)

    Köhler, Bernd; Drovs, Simon; Stoiber, Michael; Dürsch, Sascha; Kissel, Heiko; Könning, Tobias; Biesenbach, Jens; König, Harald; Lell, Alfred; Stojetz, Bernhard; Löffler, Andreas; Strauß, Uwe

    2018-02-01

    In this paper we report on further development of fiber coupled high-power diode lasers in the visible spectral range. New visible laser modules presented in this paper include the use of multi single emitter arrays @ 450 nm leading to a 120 W fiber coupled unit with a beam quality of 44 mm x mrad, as well as very compact modules with multi-W output power from 405 nm to 640 nm. However, as these lasers are based on single emitters, power scaling quickly leads to bulky laser units with a lot of optical components to be aligned. We also report on a new approach based on 450 nm diode laser bars, which dramatically reduces size and alignment effort. These activities were performed within the German government-funded project "BlauLas": a maximum output power of 80 W per bar has been demonstrated @ 450 nm. We show results of a 200 μm NA0.22 fiber coupled 35 W source @ 450 nm, which has been reduced in size by a factor of 25 compared to standard single emitter approach. In addition, we will present a 200 μm NA0.22 fiber coupled laser unit with an output power of 135 W.

  19. Diode laser-pumped Ho:YLF laser

    International Nuclear Information System (INIS)

    Hemmati, H.

    1987-01-01

    The author reports laser action in Ho:YLF at 2.06 μm following optical pumping with a cw diode laser array. Diode laser-pumped Nd-YAG and Ho:YAG have been reported recently. Lasers with a wavelength of 2 μm have medical and optical communication applications. The diode laser light is focused with a 60-mm focal length lens onto the YLF crystal. A high-reflectivity mirror with 100-mm radius of curvature was used as the output coupler. The lasing threshold was at 5 mWof incident power. This is higher than expected considering that a high reflector was used as the output coupler. However, a more uniform cooling of the crystal is expected to lower the lasing threshold. With 100 mW of pump power coupled into the crystal, --20 mW of 2-μm radiation was observed from this unoptimized setup. The 2-μm laser output is highly sensitive to output coupler alignment, YLF crystal temperature, and pump laser wavelength. The 20% optical conversion efficiency achieved in his preliminary measurements is expected to be improved by better crystal cooling, proper matching of laser wavelength to crystal absorption, variations in the concentration of Ho and sensitizers and use of a proper output coupler. A study of the parameters mentioned above and the effect of crystal temperature on the laser output is under way

  20. High average power diode pumped solid state lasers for CALIOPE

    International Nuclear Information System (INIS)

    Comaskey, B.; Halpin, J.; Moran, B.

    1994-07-01

    Diode pumping of solid state media offers the opportunity for very low maintenance, high efficiency, and compact laser systems. For remote sensing, such lasers may be used to pump tunable non-linear sources, or if tunable themselves, act directly or through harmonic crystals as the probe. The needs of long range remote sensing missions require laser performance in the several watts to kilowatts range. At these power performance levels, more advanced thermal management technologies are required for the diode pumps. The solid state laser design must now address a variety of issues arising from the thermal loads, including fracture limits, induced lensing and aberrations, induced birefringence, and laser cavity optical component performance degradation with average power loading. In order to highlight the design trade-offs involved in addressing the above issues, a variety of existing average power laser systems are briefly described. Included are two systems based on Spectra Diode Laboratory's water impingement cooled diode packages: a two times diffraction limited, 200 watt average power, 200 Hz multi-rod laser/amplifier by Fibertek, and TRW's 100 watt, 100 Hz, phase conjugated amplifier. The authors also present two laser systems built at Lawrence Livermore National Laboratory (LLNL) based on their more aggressive diode bar cooling package, which uses microchannel cooler technology capable of 100% duty factor operation. They then present the design of LLNL's first generation OPO pump laser for remote sensing. This system is specified to run at 100 Hz, 20 nsec pulses each with 300 mJ, less than two times diffraction limited, and with a stable single longitudinal mode. The performance of the first testbed version will be presented. The authors conclude with directions their group is pursuing to advance average power lasers. This includes average power electro-optics, low heat load lasing media, and heat capacity lasers

  1. Progress In Optical Memory Technology

    Science.gov (United States)

    Tsunoda, Yoshito

    1987-01-01

    More than 20 years have passed since the concept of optical memory was first proposed in 1966. Since then considerable progress has been made in this area together with the creation of completely new markets of optical memory in consumer and computer application areas. The first generation of optical memory was mainly developed with holographic recording technology in late 1960s and early 1970s. Considerable number of developments have been done in both analog and digital memory applications. Unfortunately, these technologies did not meet a chance to be a commercial product. The second generation of optical memory started at the beginning of 1970s with bit by bit recording technology. Read-only type optical memories such as video disks and compact audio disks have extensively investigated. Since laser diodes were first applied to optical video disk read out in 1976, there have been extensive developments of laser diode pick-ups for optical disk memory systems. The third generation of optical memory started in 1978 with bit by bit read/write technology using laser diodes. Developments of recording materials including both write-once and erasable have been actively pursued at several research institutes. These technologies are mainly focused on the optical memory systems for computer application. Such practical applications of optical memory technology has resulted in the creation of such new products as compact audio disks and computer file memories.

  2. Diode-pumped glass laser (10 J X 10 HZ) development

    International Nuclear Information System (INIS)

    Tadashi Kanabe; Toshiyuki Kawashima; Masanobu Yamanaka; Masahiro Nakatsuka; Yasukazu Izawa; Takeshi Kanzaki; Hirofumi Kan; Sadao Nakai

    2002-01-01

    A high-energy, high beam quality, diode-pumped 1053-nm Nd:phosphate glass laser amplifier has been demonstrated in order to verify the conceptual design of HALNA (High Average-power Laser for Nuclear-fusion Application): a diode-pumped solid-state laser based on a water-cooled zig-zag slab optical geometry. This amplifier yielded 8.5 J output energy per pulse at 0.5 Hz in a 20 ns pulse of two times the diffraction limit beam quality with an optical-to-optical conversion efficiency of 10.9%. The experimental results revealed that the primary requirements for the IFE driver, such as diode-pumping, energy storage and extraction efficiencies, and beam quality have been fulfilled

  3. Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

    DEFF Research Database (Denmark)

    Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

    2011-01-01

    electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti: sapphire lasers to be used in applications....... When using our diode laser system, the optical conversion efficiencies from green to near-infrared light reduces to 75 % of the values achieved with the commercial pump laser. Despite this reduction the overall efficiency of the Ti: sapphire laser is still increased by a factor > 2 due to the superior...... like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy....

  4. Compact 2100 nm laser diode module for next-generation DIRCM

    Science.gov (United States)

    Dvinelis, Edgaras; Greibus, Mindaugas; TrinkÅ«nas, Augustinas; NaujokaitÄ--, Greta; Vizbaras, Augustinas; Vizbaras, Dominykas; Vizbaras, Kristijonas

    2017-10-01

    Compact high-power 2100 nm laser diode module for next-generation directional infrared countermeasure (DIRCM) systems is presented. Next-generation DIRCM systems require compact, light-weight and robust laser modules which could provide intense IR light emission capable of disrupting the tracking sensor of heat-seeking missile. Currently used solid-state and fiber laser solutions for mid-IR band are bulky and heavy making them difficult to implement in smaller form-factor DIRCM systems. Recent development of GaSb laser diode technology greatly improved optical output powers and efficiencies of laser diodes working in 1900 - 2450 nm band [1] while also maintaining very attractive size, weight, power consumption and cost characteristics. 2100 nm laser diode module presented in this work performance is based on high-efficiency broad emitting area GaSb laser diode technology. Each laser diode emitter is able to provide 1 W of CW output optical power with working point efficiency up to 20% at temperature of 20 °C. For output beam collimation custom designed fast-axis collimator and slow-axis collimator lenses were used. These lenses were actively aligned and attached using UV epoxy curing. Total 2 emitters stacked vertically were used in 2100 nm laser diode module. Final optical output power of the module goes up to 2 W at temperature of 20 °C. Total dimensions of the laser diode module are 35 x 25 x 16 mm (L x W x H) with a weight of 28 grams. Finally output beam is bore-sighted to mechanical axes of the module housing allowing for easy integration into next-generation DIRCM systems.

  5. 2000W high beam quality diode laser for direct materials processing

    Science.gov (United States)

    Qin, Wen-bin; Liu, You-qiang; Cao, Yin-hua; Gao, Jing; Pan, Fei; Wang, Zhi-yong

    2011-11-01

    This article describes high beam quality and kilowatt-class diode laser system for direct materials processing, using optical design software ZEMAX® to simulate the diode laser optical path, including the beam shaping, collimation, coupling, focus, etc.. In the experiment, the diode laser stack of 808nm and the diode laser stack of 915nm were used for the wavelength coupling, which were built vertical stacks up to 16 bars. The threshold current of the stack is 6.4A, the operating current is 85A and the output power is 1280W. Through experiments, after collimating the diode laser beam with micro-lenses, the fast axis BPP of the stack is less than 60mm.mrad, and the slow-axis BPP of the stack is less than 75mm.mrad. After shaping the laser beam and improving the beam quality, the fast axis BPP of the stack is still 60mm.mrad, and the slow-axis BPP of the stack is less than 19mm.mrad. After wavelength coupling and focusing, ultimately the power of 2150W was obtained, focal spot size of 1.5mm * 1.2mm with focal length 300mm. The laser power density is 1.2×105W/cm2, and that can be used for metal remelting, alloying, cladding and welding. The total optical coupling conversion efficiency is 84%, and the total electrical - optical conversion efficiency is 50%.

  6. Power blue and green laser diodes and their applications

    Science.gov (United States)

    Hager, Thomas; Strauß, Uwe; Eichler, Christoph; Vierheilig, Clemens; Tautz, Sönke; Brüderl, Georg; Stojetz, Bernhard; Wurm, Teresa; Avramescu, Adrian; Somers, André; Ristic, Jelena; Gerhard, Sven; Lell, Alfred; Morgott, Stefan; Mehl, Oliver

    2013-03-01

    InGaN based green laser diodes with output powers up to 50mW are now well established for variety of applications ranging from leveling to special lighting effects and mobile projection of 12lm brightness. In future the highest market potential for visible single mode profile lasers might be laser projection of 20lm. Therefore direct green single-mode laser diodes with higher power are required. We found that self heating was the limiting factor for higher current operation. We present power-current characteristics of improved R and D samples with up to 200mW in cw-operation. An optical output power of 100mW is reached at 215mA, a current level which is suitable for long term operation. Blue InGaN laser diodes are also the ideal source for phosphor based generation of green light sources of high luminance. We present a light engine based on LARP (Laser Activated Remote Phosphor) which can be used in business projectors of several thousand lumens on screen. We discuss the advantages of a laser based systems in comparison with LED light engines. LARP requires highly efficient blue power laser diodes with output power above 1W. Future market penetration of LARP will require lower costs. Therefore we studied new designs for higher powers levels. R and D chips with power-current characteristics up to 4W in continuous wave operation on C-mount at 25°C are presented.

  7. Highly-reliable laser diodes and modules for spaceborne applications

    Science.gov (United States)

    Deichsel, E.

    2017-11-01

    Laser applications become more and more interesting in contemporary missions such as earth observations or optical communication in space. One of these applications is light detection and ranging (LIDAR), which comprises huge scientific potential in future missions. The Nd:YAG solid-state laser of such a LIDAR system is optically pumped using 808nm emitting pump sources based on semiconductor laser-diodes in quasi-continuous wave (qcw) operation. Therefore reliable and efficient laser diodes with increased output powers are an important requirement for a spaceborne LIDAR-system. In the past, many tests were performed regarding the performance and life-time of such laser-diodes. There were also studies for spaceborne applications, but a test with long operation times at high powers and statistical relevance is pending. Other applications, such as science packages (e.g. Raman-spectroscopy) on planetary rovers require also reliable high-power light sources. Typically fiber-coupled laser diode modules are used for such applications. Besides high reliability and life-time, designs compatible to the harsh environmental conditions must be taken in account. Mechanical loads, such as shock or strong vibration are expected due to take-off or landing procedures. Many temperature cycles with high change rates and differences must be taken in account due to sun-shadow effects in planetary orbits. Cosmic radiation has strong impact on optical components and must also be taken in account. Last, a hermetic sealing must be considered, since vacuum can have disadvantageous effects on optoelectronics components.

  8. Studies of cold protection diodes

    International Nuclear Information System (INIS)

    Carcagno, R.; Zeigler, J.

    1990-01-01

    The feasibility of a passive quench protection system for the Superconducting Supercollider (SSC) main ring magnets depends on the radiation resistance and reliability of the diodes used as current bypass elements. These diodes would be located inside the magnet cryostat, subjecting them to liquid helium temperature and a relatively high radiation flux. Experimental and theoretical efforts have identified a commercially available diode which appears to be capable of surviving the cryogenic temperature and radiation environment of the accelerator. High current IV measurements indicate that the usable lifetime of this diode, based on an estimate of the peak junction temperature during a quench pulse, is an order of magnitude greater then than the expected lifetime of the SSC itself. However, an unexpected relationship was discovered between the diode turn-on voltage at 5 K and the most recent reverse voltage or temperature excursion. This turn-on voltage as a function of radiation exposure appears to be erratic and indicates a need for further investigation. 14 refs., 8 figs., 2 tabs

  9. Studies of cold protection diodes

    International Nuclear Information System (INIS)

    Carcagno, R.; Zeigler, J.

    1990-03-01

    The feasibility of a passive quench protection system for the Superconducting Supercollider (SSC) main ring magnets depends on the radiation resistance and reliability of the diodes used as current bypass elements. These diodes would be located inside the magnet cryostat, subjecting them to liquid helium temperature and a relatively high radiation flux. Experimental and theoretical efforts have identified a commercially available diode which appears to be capable of surviving the cryogenic temperature and radiation environment of the accelerator. High current 4 measurements indicate that the usable lifetime of this diode, based on an estimate of the peak junction temperature during a quench pulse, is an order of magnitude greater then than the expected lifetime of the SSC itself. However, an unexpected relationship was discovered between the diode turn-on voltage at 5 K and the most recent reverse voltage or temperature excursion. This turn-on voltage as a function of radiation exposure appears to be erratic and indicates a need for further investigation. 11 refs., 8 figs., 2 tabs

  10. Improved performance of high average power semiconductor arrays for applications in diode pumped solid state lasers

    International Nuclear Information System (INIS)

    Beach, R.; Emanuel, M.; Benett, W.; Freitas, B.; Ciarlo, D.; Carlson, N.; Sutton, S.; Skidmore, J.; Solarz, R.

    1994-01-01

    The average power performance capability of semiconductor diode laser arrays has improved dramatically over the past several years. These performance improvements, combined with cost reductions pursued by LLNL and others in the fabrication and packaging of diode lasers, have continued to reduce the price per average watt of laser diode radiation. Presently, we are at the point where the manufacturers of commercial high average power solid state laser systems used in material processing applications can now seriously consider the replacement of their flashlamp pumps with laser diode pump sources. Additionally, a low cost technique developed and demonstrated at LLNL for optically conditioning the output radiation of diode laser arrays has enabled a new and scalable average power diode-end-pumping architecture that can be simply implemented in diode pumped solid state laser systems (DPSSL's). This development allows the high average power DPSSL designer to look beyond the Nd ion for the first time. Along with high average power DPSSL's which are appropriate for material processing applications, low and intermediate average power DPSSL's are now realizable at low enough costs to be attractive for use in many medical, electronic, and lithographic applications

  11. Effect of laser-diode light on growth of Lactuca sativa L

    International Nuclear Information System (INIS)

    Yamazaki, A.; Tsuchiya, H.; Miyajima, H.; Honma, T.; Kan, H.

    2000-01-01

    Development of an effective, high-power, low-cost, artificial light source for use in plant-growing facilities would be very beneficial for plant production. Recently, the laser-diode lamp was proposed as a new type of light source for plant production. The advantages of the laser-diode lamp over conventional light sources are its high electrical-to-optical power conversion efficiency, low thermal radiation, easy set-up for high power and pulse irradiation, small weight and small volume for mounting, and selectivity for proper wavelength. Because laser light itself differs from the light sources presently used in plant growing, we confirmed the possibility of growing plants under the laser-diode light using lettuces. Lettuce seedlings with 5-6 leaves were grown under a laser-diode lamp panel with 30 pieces of high-power and high-efficiency AlGaInP laser-diodes. The power of each laser-diode lamp was 500 mW, and the wavelength was 680 nm, which was efficient for photosynthesis. The lettuce plants were able to grow under the laser-diode light. However, plants were lighter and had thinner leaves than those grown under high-pressure sodium lamps. (author)

  12. Role of noise in the diode-laser spectroscopy of the spectral line profile

    International Nuclear Information System (INIS)

    Nadezhdinskii, Aleksandr I; Plotnichenko, V V; Ponurovskii, Ya Ya; Spiridonov, Maksim V

    2000-01-01

    Questions concerning precise measurements of the spectral-line-profile parameters by diode-laser spectroscopic methods were examined. The instrumental function of a distributed-feedback diode laser (λ =1.53 μm), consisting of the additive contributions of the noise due to spontaneous emission, frequency fluctuations, and intensity fluctuations, was investigated. An analytical formula was obtained for the spectrum of the diode-laser field formed by frequency fluctuations. The spectral density g 0 of the frequency fluctuations, determining the width of the central part of the emission line profile of a diode laser, was found by two independent methods (by fitting to a Doppler-broadened absorption line profile and by finding the intensity of the residual radiation and the saturated-absorption line width). The parameters Ω and Γ of the spectral density of the frequency fluctuations, coupled to the relaxation oscillations and determining the wing of the diode-laser emission line profile, were determined experimentally. By taking into account the instrumental function of the diode laser, involving successive convolution with the recorded emission spectra, it was possible to reproduce correctly the spectral line profile and to solve accurately the problem of the 'optical zero'. The role of the correlation between the intensity noise and the diode-laser frequency was considered. (laser applications and other topics in quantum electronics)

  13. III-nitride Photonic Integrated Circuit: Multi-section GaN Laser Diodes for Smart Lighting and Visible Light Communication

    KAUST Repository

    Shen, Chao

    2017-01-01

    The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the Ga

  14. Direct diode lasers and their advantages for materials processing and other applications

    Science.gov (United States)

    Fritsche, Haro; Ferrario, Fabio; Koch, Ralf; Kruschke, Bastian; Pahl, Ulrich; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang; Eibl, Florian; Kohl, Stefanie; Dobler, Michael

    2015-03-01

    The brightness of diode lasers is improving continuously and has recently started to approach the level of some solid state lasers. The main technology drivers over the last decade were improvements of the diode laser output power and divergence, enhanced optical stacking techniques and system design, and most recently dense spectral combining. Power densities at the work piece exceed 1 MW/cm2 with commercially available industrial focus optics. These power densities are sufficient for cutting and welding as well as ablation. Single emitter based diode laser systems further offer the advantage of fast current modulation due their lower drive current compared to diode bars. Direct diode lasers may not be able to compete with other technologies as fiber or CO2-lasers in terms of maximum power or beam quality. But diode lasers offer a range of features that are not possible to implement in a classical laser. We present an overview of those features that will make the direct diode laser a very valuable addition in the near future, especially for the materials processing market. As the brightness of diode lasers is constantly improving, BPP of less than 5mm*mrad have been reported with multikW output power. Especially single emitter-based diode lasers further offer the advantage of very fast current modulation due to their low drive current and therefore low drive voltage. State of the art diode drivers are already demonstrated with pulse durations of direct current control allows pulses of several microseconds with hundreds of watts average power. Spot sizes of less than 100 μm are obtained at the work piece. Such a diode system allows materials processing with a pulse parameter range that is hardly addressed by any other laser system. High productivity material ablation with cost effective lasers is enabled. The wide variety of wavelengths, high brightness, fast power modulation and high efficiency of diode lasers results in a strong pull of existing markets, but

  15. Characterization of diode-laser stacks for high-energy-class solid state lasers

    Science.gov (United States)

    Pilar, Jan; Sikocinski, Pawel; Pranowicz, Alina; Divoky, Martin; Crump, P.; Staske, R.; Lucianetti, Antonio; Mocek, Tomas

    2014-03-01

    In this work, we present a comparative study of high power diode stacks produced by world's leading manufacturers such as DILAS, Jenoptik, and Quantel. The diode-laser stacks are characterized by central wavelength around 939 nm, duty cycle of 1 %, and maximum repetition rate of 10 Hz. The characterization includes peak power, electrical-to-optical efficiency, central wavelength and full width at half maximum (FWHM) as a function of diode current and cooling temperature. A cross-check of measurements performed at HiLASE-IoP and Ferdinand-Braun-Institut (FBH) shows very good agreement between the results. Our study reveals also the presence of discontinuities in the spectra of two diode stacks. We consider the results presented here a valuable tool to optimize pump sources for ultra-high average power lasers, including laser fusion facilities.

  16. High performance MIIM diode based on cobalt oxide/titanium oxide

    Science.gov (United States)

    Herner, S. B.; Weerakkody, A. D.; Belkadi, A.; Moddel, G.

    2017-05-01

    Optical rectennas for infrared energy harvesting commonly incorporate metal/double-insulator/metal diodes. Required diode characteristics include high responsivity and low resistance near zero bias with a sub-micron area, which have not been obtainable simultaneously. Diodes based on a new material set, Co/Co3O4/TiO2/Ti and an area of 0.071 μm2, provide a median maximum responsivity of 4.1 A/W, a median zero-bias responsivity of 1.2 A/W, and a median resistance of 14 kΩ. The highest performing diode has a maximum responsivity of 4.4 A/W, a zero-bias responsivity of 2.2 A/W, and a resistance of 18 kΩ.

  17. Multi-kW high-brightness fiber coupled diode laser based on two dimensional stacked tailored diode bars

    Science.gov (United States)

    Bayer, Andreas; Unger, Andreas; Köhler, Bernd; Küster, Matthias; Dürsch, Sascha; Kissel, Heiko; Irwin, David A.; Bodem, Christian; Plappert, Nora; Kersten, Maik; Biesenbach, Jens

    2016-03-01

    The demand for high brightness fiber coupled diode laser devices in the multi kW power region is mainly driven by industrial applications for materials processing, like brazing, cladding and metal welding, which require a beam quality better than 30 mm x mrad and power levels above 3kW. Reliability, modularity, and cost effectiveness are key factors for success in the market. We have developed a scalable and modular diode laser architecture that fulfills these requirements through use of a simple beam shaping concept based on two dimensional stacking of tailored diode bars mounted on specially designed, tap water cooled heat sinks. The base element of the concept is a tailored diode laser bar with an epitaxial and lateral structure designed such that the desired beam quality in slow-axis direction can be realized without using sophisticated beam shaping optics. The optical design concept is based on fast-axis collimator (FAC) and slow-axis collimator (SAC) lenses followed by only one additional focusing optic for efficient coupling into a 400 μm fiber with a numerical aperture (NA) of 0.12. To fulfill the requirements of scalability and modularity, four tailored bars are populated on a reduced size, tap water cooled heat sink. The diodes on these building blocks are collimated simply via FAC and SAC. The building blocks can be stacked vertically resulting in a two-dimensional diode stack, which enables a compact design of the laser source with minimum beam path length. For a single wavelength, up to eight of these building blocks, implying a total of 32 tailored bars, can be stacked into a submodule, polarization multiplexed, and coupled into a 400 μm, 0.12NA fiber. Scalability into the multi kW region is realized by wavelength combining of replaceable submodules in the spectral range from 900 - 1100 nm. We present results of a laser source based on this architecture with an output power of more than 4 kW and a beam quality of 25 mm x mrad.

  18. Wideband 4-diode sampling circuit

    Science.gov (United States)

    Wojtulewicz, Andrzej; Radtke, Maciej

    2016-09-01

    The objective of this work was to develop a wide-band sampling circuit. The device should have the ability to collect samples of a very fast signal applied to its input, strengthen it and prepare for further processing. The study emphasizes the method of sampling pulse shaping. The use of ultrafast pulse generator allows sampling signals with a wide frequency spectrum, reaching several gigahertzes. The device uses a pulse transformer to prepare symmetrical pulses. Their final shape is formed with the help of the step recovery diode, two coplanar strips and Schottky diode. Made device can be used in the sampling oscilloscope, as well as other measurement system.

  19. Faraday anomalous dispersion optical tuners

    Science.gov (United States)

    Wanninger, P.; Valdez, E. C.; Shay, T. M.

    1992-01-01

    Common methods for frequency stabilizing diode lasers systems employ gratings, etalons, optical electric double feedback, atomic resonance, and a Faraday cell with low magnetic field. Our method, the Faraday Anomalous Dispersion Optical Transmitter (FADOT) laser locking, is much simpler than other schemes. The FADOT uses commercial laser diodes with no antireflection coatings, an atomic Faraday cell with a single polarizer, and an output coupler to form a compound cavity. This method is vibration insensitive, thermal expansion effects are minimal, and the system has a frequency pull in range of 443.2 GHz (9A). Our technique is based on the Faraday anomalous dispersion optical filter. This method has potential applications in optical communication, remote sensing, and pumping laser excited optical filters. We present the first theoretical model for the FADOT and compare the calculations to our experimental results.

  20. Femtosecond Nonlinearities in Indium Gallium Arsenic Phosphide Diode Lasers

    Science.gov (United States)

    Hall, Katherine Lavin

    Semiconductor optical amplifiers are receiving increasing attention for possible applications to broadband optical communication and switching systems. In this thesis we report the results of an extensive experimental study of the ultrafast gain and refractive index nonlinearities in 1.5 μm InGaAsP laser diode amplifiers. The temporal resolution afforded by the femtosecond optical pulses used in these experiments allows us to study carrier interactions with other carriers as well as carrier interactions with the lattice. The 100-200 fs optical pulses used in the pump -probe experiments are generated by an Additive Pulse Modelocked color center laser. The measured group velocity dispersion in the diodes ranged from -0.6 to -0.95 mu m^{-1 }. Differences in the group velocity for TE - and TM-polarized pulses suggested that cross-polarized pump-probe pulses walk off from each other in the diode. This walk-off can diminish the time resolution of some experiments. A novel heterodyne pump-probe technique was developed to distinguish collinear, copolarized, pump and probe pulses that were nominally at the same wavelength. Comparing cross-polarized and copolarized pump-probe results yielded new information about the physical mechanisms responsible for nonlinear gain in the diodes. We observed a gain compression across the entire bandwidth of the diode, associated with carrier heating. The hot carrier distribution cooled back to the lattice temperature with a 0.6 to 1.0 ps time constant, depending on the device structure. In addition, we observed a 0.1 to 0.25 ps delay in onset of carrier heating. Large gain compression due to two photon absorption was also observed. A small portion of the nonlinear gain is attributed to spectral hole burning. Pulsewidth-dependent output saturation energies were explained by a rate equation model that included the effect of carrier heating. Measurements of pump-induced probe phase changes revealed index nonlinearities due to delayed carrier

  1. Modulation of distributed feedback (DFB) laser diode with the autonomous Chua's circuit: Theory and experiment

    Science.gov (United States)

    Talla Mbé, Jimmi Hervé; Woafo, Paul

    2018-03-01

    We report on a simple way to generate complex optical waveforms with very cheap and accessible equipments. The general idea consists in modulating a laser diode with an autonomous electronic oscillator, and in the case of this study, we use a distributed feedback (DFB) laser diode pumped with an electronic Chua's circuit. Based on the adiabatic P-I characteristics of the laser diode at low frequencies, we show that when the total pump is greater than the laser threshold, it is possible to convert the electrical waveforms of the Chua's circuit into optical carriers. But, if that is not the case, the on-off dynamical behavior of the laser permits to obtain many other optical waveform signals, mainly pulses. Our numerical results are consistent with experimental measurements. The work presents the advantage of extending the range of possible chaotic dynamics of the laser diodes in the time domains (millisecond) where it is not usually expected with conventional modulation techniques. Moreover, this new technique of laser diodes modulation brings a general benefit in the physical equipment, reduces their cost and congestion so that, it can constitute a step towards photonic integrated circuits.

  2. Free space broad-bandwidth tunable laser diode based on Littman configuration for 3D profile measurement

    Science.gov (United States)

    Shirazi, Muhammad Faizan; Kim, Pilun; Jeon, Mansik; Kim, Chang-Seok; Kim, Jeehyun

    2018-05-01

    We developed a tunable laser diode for an optical coherence tomography system that can perform three-dimensional profile measurement using an area scanning technique. The tunable laser diode is designed using an Eagleyard tunable laser diode with a galvano filter. The Littman free space configuration is used to demonstrate laser operation. The line- and bandwidths of this source are 0.27 nm (∼110 GHz) and 43 nm, respectively, at the center wavelength of 860 nm. The output power is 20 mW at an operating current of 150 mA. A step height target is imaged using a wide-area scanning system to show the measurement accuracy of the proposed tunable laser diode. A TEM grid is also imaged to measure the topography and thickness of the sample by proposed tunable laser diode.

  3. A High Power InGaN-Based Blue-Violet Laser Diode Array with a Broad-Area Stripe

    International Nuclear Information System (INIS)

    Chen Ping; Zhao De-Gang; Feng Mei-Xin; Jiang De-Sheng; Liu Zong-Shun; Yang Hui; Zhang Li-Qun; Li De-Yao; Liu Jian-Ping; Wang Hui; Zhu Jian-Jun; Zhang Shu-Ming; Zhang Bao-Shun

    2013-01-01

    An array of high power InGaN/GaN multi-quantum-well laser diodes with a broad waveguide is fabricated. The laser diode structure is grown on a GaN substrate by metal-organic chemical vapor deposition. The laser diode array consists of five emitter stripes which share common electrodes on one laser chip. The electrical and optical characteristics of the laser diode array are investigated under the pulse current injection with 10kHz frequency and 100 ns pulse width. The laser diode array emits at the wavelength of 409 nm, which is located in the blue-violet region, and the threshold current is 2.9 A. The maximum output light peak power is measured to be 7.5 W at the wavelength of 411.8 nm under the current of 25 A

  4. Probing photo-carrier collection efficiencies of individual silicon nanowire diodes on a wafer substrate.

    Science.gov (United States)

    Schmitt, S W; Brönstrup, G; Shalev, G; Srivastava, S K; Bashouti, M Y; Döhler, G H; Christiansen, S H

    2014-07-21

    Vertically aligned silicon nanowire (SiNW) diodes are promising candidates for the integration into various opto-electronic device concepts for e.g. sensing or solar energy conversion. Individual SiNW p-n diodes have intensively been studied, but to date an assessment of their device performance once integrated on a silicon substrate has not been made. We show that using a scanning electron microscope (SEM) equipped with a nano-manipulator and an optical fiber feed-through for tunable (wavelength, power using a tunable laser source) sample illumination, the dark and illuminated current-voltage (I-V) curve of individual SiNW diodes on the substrate wafer can be measured. Surprisingly, the I-V-curve of the serially coupled system composed of SiNW/wafers is accurately described by an equivalent circuit model of a single diode and diode parameters like series and shunting resistivity, diode ideality factor and photocurrent can be retrieved from a fit. We show that the photo-carrier collection efficiency (PCE) of the integrated diode illuminated with variable wavelength and intensity light directly gives insight into the quality of the device design at the nanoscale. We find that the PCE decreases for high light intensities and photocurrent densities, due to the fact that considerable amounts of photo-excited carriers generated within the substrate lead to a decrease in shunting resistivity of the SiNW diode and deteriorate its rectification. The PCE decreases systematically for smaller wavelengths of visible light, showing the possibility of monitoring the effectiveness of the SiNW device surface passivation using the shown measurement technique. The integrated device was pre-characterized using secondary ion mass spectrometry (SIMS), TCAD simulations and electron beam induced current (EBIC) measurements to validate the properties of the characterized material at the single SiNW diode level.

  5. Fiber optics: A brief introduction

    International Nuclear Information System (INIS)

    Gruchalla, M.E.

    1989-01-01

    A basic introduction into the principles of fiber optics is presented. A review of both the underlying physical principles and the individual elements of typical fiber-optic systems are presented. The optical phenomenon of total internal reflection is reviewed. The basic construction of the optical fiber is presented. Both step-index and graded-index fiber designs are reviewed. Multimode and single-mode fiber constructions are considered and typical performance parameters given. Typical optical-fiber bandwidth and loss characteristics are compared to various common coaxial cables, waveguides, and air transmission. The constructions of optical-fiber cables are reviewed. Both loose-tube and tightly-buffered designs are considered. Several optical connection approaches are presented. Photographs of several representative optical connectors are included. Light Emitting Diode and Laser Diode emitters for fiber-optic applications are reviewed, and some advantages and shortcomings of each are considered. The phenomenon of modal noise is briefly explained. Both PIN and Avalanche photodetectors are reviewed and their performance parameters compared. Methods of data transmission over optical fiber are introduced. Principles of Wavelength, Frequency, and Time Division Multiplexing are briefly presented. The technology of fiber-optic sensors is briefly reviewed with basic principles introduced. The performance of a fiber-optic strain sensor is included as a practical example. 7 refs., 10 figs

  6. Laser diode self-mixing technique for liquid velocimetry

    Energy Technology Data Exchange (ETDEWEB)

    Alexandrova, A., E-mail: a.alexandrova@liverpool.ac.uk [Cockcroft Institute, Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); University of Liverpool, Department of Physics, Liverpool L69 7ZE (United Kingdom); Welsch, C.P. [Cockcroft Institute, Daresbury Laboratory, Daresbury, Warrington WA4 4AD (United Kingdom); University of Liverpool, Department of Physics, Liverpool L69 7ZE (United Kingdom)

    2016-09-11

    Using the self-mixing technique, or optical feedback interferometry, fluid velocity measurements of water seeded with titanium dioxide have been performed using a laser diode to measure the effect of the seeding particle concentration and also the pump speed of the flow. The velocimeter utilises commercially available laser diodes with a built-in photodiode for detection of the self-mixing effect. The device has demonstrated an accuracy better than 10% for liquid flow velocities up to 1.5 m/s with a concentration of scattering particles in the range of 0.8–0.03%. This is an improvement of one order of magnitude compared to previous experiments. The proposed velocimeter is to be developed further for application in gas-jet measurements.

  7. Efficient continuous-wave 1112 nm Nd:YAG laser operation under direct diode pumping at 885 nm

    International Nuclear Information System (INIS)

    Gao, J; Dai, X J; Zhang, L; Wu, X D

    2013-01-01

    We report compact diode-end-pumped continuous-wave laser operation at 1112 nm under 885 nm diode-direct pumping for the first time. On the basis of the R 2 →Y 6 transition in a conventional Nd:YAG (yttrium aluminum garnet) single crystal, the maximum output power of 12.5 W is achieved, with an optical to optical efficiency of 46.6% and a slope efficiency of 52.9%. To the best of our knowledge, this represents the highest output at 1112 nm generated by a diode-end-pumped Nd:YAG laser. Furthermore, it is the highest optical to optical efficiency ever reported for 1112 nm Nd:YAG lasers. The short term power stability is ∼0.32% at 12.0 W output. (letter)

  8. Short wavelength optics for future free electron lasers

    International Nuclear Information System (INIS)

    Attwood, D.T.

    1984-04-01

    Although much free-electron laser work is directed toward achieving sufficient single-pass gain to be useful for research purposes, the availability of mirrors of high reflectance for the vacuum ultraviolet and soft x-ray regime would make resonant cavities a possibility. In addition, as in ordinary synchrotron radiation work, mirrors are required for the construction of realistic experiments and for beam manipulation purposes such as folding and extraction. The Working Group discussed a number of approaches to reflecting optics for free electron lasers, which are summarized here, and described in some detail. 16 references, 2 figures

  9. Laser diode technology and applications

    International Nuclear Information System (INIS)

    Figueroa, L.

    1989-01-01

    This book covers a wide range of semiconductor laser technology, from new laser structures and laser design to applications in communications, remote sensing, and optoelectronics. The authors report on new laser diode physics and applications and present a survey of the state of the art as well as progress in new developments

  10. Spin-photon entangling diode

    DEFF Research Database (Denmark)

    Flindt, Christian; Sørensen, A. S.; Lukin, M. D.

    2007-01-01

    We propose a semiconductor device that can electrically generate entangled electron spin-photon states, providing a building block for entanglement of distant spins. The device consists of a p-i-n diode structure that incorporates a coupled double quantum dot. We show that electronic control of t...

  11. Thermal imaging of high power diode lasers subject to back-irradiance

    Science.gov (United States)

    Li, C.; Pipe, K. P.; Cao, C.; Thiagarajan, P.; Deri, R. J.; Leisher, P. O.

    2018-03-01

    CCD-based thermoreflectance imaging and finite element modeling are used to study the two-dimensional (2D) temperature profile of a junction-down broad-area diode laser facet subject to back-irradiance. By determining the temperature rise in the active region (ΔΤAR) at different diode laser optical powers, back-irradiance reflectance levels, and back-irradiance spot locations, we find that ΔΤAR increases by nearly a factor of three when the back-irradiance spot is centered in the absorbing substrate approximately 5 μm away from the active region, a distance roughly equal to half of the back-irradiance spot FWHM (9 μm). This corroborates prior work studying the relationship between the back-irradiance spot location and catastrophic optical damage, suggesting a strong thermal basis for reduced laser lifetime in the presence of back-irradiance for diode lasers fabricated on absorbing substrates.

  12. Note: Demonstration of an external-cavity diode laser system immune to current and temperature fluctuations.

    Science.gov (United States)

    Miao, Xinyu; Yin, Longfei; Zhuang, Wei; Luo, Bin; Dang, Anhong; Chen, Jingbiao; Guo, Hong

    2011-08-01

    We demonstrate an external-cavity laser system using an anti-reflection coated laser diode as gain medium with about 60 nm fluorescence spectrum, and a Rb Faraday anomalous dispersion optical filter (FADOF) as frequency-selecting element with a transmission bandwidth of 1.3 GHz. With 6.4% optical feedback, a single stable longitudinal mode is obtained with a linewidth of 69 kHz. The wavelength of this laser is operating within the center of the highest transmission peak of FADOF over a diode current range from 55 mA to 142 mA and a diode temperature range from 15 °C to 35 °C, thus it is immune to the fluctuations of current and temperature.

  13. Nano Antenna Integrated Diode (Rectenna) For Infrared Energy Harvesting

    KAUST Repository

    Gadalla, Mena N.

    2013-01-01

    40% without it) which in turn improves the coupled power by 40 times. Nano antennas were fabricated in house using Electron beam lithography with a precise gap of 50nm. In addition, THz diode was designed, fabricated and integrated to the nano antennas to rectify the enhanced THz signal. The integration of the nano diode required a precise overlap of the two arms of the antenna in the rage of 100nm. In order to overcome two arms overlap fabrication challenges, three layer alignment technique was used to produce precise overlap.The THz rectifier was electrically tested and shown high sensitivity and rectification ability without any bias. Finally, nano antenna integrated diode is under optical testing using   a   10.6μm   𝐶𝑜2 laser at Electro-Optics Lab, Prince Sultan Advanced Technologies Research Institute (PSATRI), King Saud University due to the unavailability of the measurement setup in KAUST.

  14. Spectral properties of a broad-area diode laser with off-axis external-cavity feedback

    DEFF Research Database (Denmark)

    Chi, Mingjun; Petersen, Paul Michael

    2013-01-01

    Spectral properties, both the optical spectrum and the intensity noise spectrum, of a broad-area diode laser with off-axis external-cavity feedback are presented. We show that the optical spectrum of the diode laser system is shifted to longer wavelengths due to the external-cavity feedback....... The intensity noise spectrum of the diode laser shows that the intensity noise is increased strongly by the external-cavity feedback. External-cavity modes are excited in the external cavity even in the off-axis configuration. The peak spacing of the intensity noise spectrum shows that single roundtrip external......-cavity modes are excited. We believe that the four-wave mixing process in the broad-area diode laser is responsible for the establishment of the external-cavity mode....

  15. Optoelectronic line transmission an introduction to fibre optics

    CERN Document Server

    Tricker, Raymond L

    2013-01-01

    Optoelectronic Line Transmission: An Introduction to Fibre Optics presents a basic introduction as well as a background reference manual on fiber optic transmission. The book discusses the basic principles of optical line transmission; the advantages and disadvantages of optical fibers and optoelectronic signalling; the practical applications of optoelectronics; and the future of optoelectronics. The text also describes the theories of optical line transmission; fibers and cables for optical transmission; transmitters including light-emitting diodes and lasers; and receivers including photodi

  16. High Intensity Organic Light-emitting Diodes

    Science.gov (United States)

    Qi, Xiangfei

    This thesis is dedicated to the fabrication, modeling, and characterization to achieve high efficiency organic light-emitting diodes (OLEDs) for illumination applications. Compared to conventional lighting sources, OLEDs enabled the direct conversion of electrical energy into light emission and have intrigued the world's lighting designers with the long-lasting, highly efficient illumination. We begin with a brief overview of organic technology, from basic organic semiconductor physics, to its application in optoelectronics, i.e. light-emitting diodes, photovoltaics, photodetectors and thin-film transistors. Due to the importance of phosphorescent materials, we will focus on the photophysics of metal complexes that is central to high efficiency OLED technology, followed by a transient study to examine the radiative decay dynamics in a series of phosphorescent platinum binuclear complexes. The major theme of this thesis is the design and optimization of a novel architecture where individual red, green and blue phosphorescent OLEDs are vertically stacked and electrically interconnected by the compound charge generation layers. We modeled carrier generation from the metal-oxide/doped organic interface based on a thermally assisted tunneling mechanism. The model provides insights to the optimization of a stacked OLED from both electrical and optical point of view. To realize the high intensity white lighting source, the efficient removal of heat is of a particular concern, especially in large-area devices. A fundamental transfer matrix analysis is introduced to predict the thermal properties in the devices. The analysis employs Laplace transforms to determine the response of the system to the combined effects of conduction, convection, and radiation. This perspective of constructing transmission matrices greatly facilitates the calculation of transient coupled heat transfer in a general multi-layer composite. It converts differential equations to algebraic forms, and

  17. High power diode pumped solid state lasers

    International Nuclear Information System (INIS)

    Solarz, R.; Albrecht, G.; Beach, R.; Comaskey, B.

    1992-01-01

    Although operational for over twenty years, diode pumped solid state lasers have, for most of their existence, been limited to individual diodes pumping a tiny volume of active medium in an end pumped configuration. More recent years have witnessed the appearance of diode bars, packing around 100 diodes in a 1 cm bar which have enabled end and side pumped small solid state lasers at the few Watt level of output. This paper describes the subsequent development of how proper cooling and stacking of bars enables the fabrication of multi kill average power diode pump arrays with irradiances of 1 kw/cm peak and 250 W/cm 2 average pump power. Since typical conversion efficiencies from the diode light to the pumped laser output light are of order 30% or more, kW average power diode pumped solid state lasers now are possible

  18. Proceedings of the IEEE laser and electro-optics society annual meeting

    International Nuclear Information System (INIS)

    Hudson, M.J.B.; Raney, H.; Raney, D.; Spalaris, C.N.

    1990-01-01

    This book is covered under the following headings: Electro-optic systems; Emerging laser technology; Optical sensors and measurements; Optoelectronics; Semiconductor diode lasers; Solid state lasers; UV and short wavelength; Applied optical diagnostics of semiconductor materials and devices symposium and optical sensors and measurements; and Applied optical diagnostics of semiconductor materials and devices symposium

  19. Development of diode-pumped solid-state laser HALNA for fusion reactor driver

    International Nuclear Information System (INIS)

    Kawashima, Toshiyuki; Kanabe, Tadashi; Matsumoto, Osamu

    2005-01-01

    The diode-pumped slab laser for inertial fusion energy driver has been demonstrated, which produces the 1053-nm output energy of 10 J at 10 Hz. The glass slab laser amplifier has been pumped by quasi-CW 290 kW AlGaAs laser-diode arrays at 803 nm. The optical system can compensate for thermal effects by use of zig-zag optical propagation, image-relayed telescope, and 45deg Faraday rotator. The output energy of 10.6 J at 1 Hz with the optical to optical conversion efficiency of 19.9% has been successfully obtained. Also the 10 Hz operation has been performed with a 5.1 J output energy. (author)

  20. Quantum dot superluminescent light emitting diodes: Ideal blackbody radiators?

    Energy Technology Data Exchange (ETDEWEB)

    Blazek, Martin; Elsaesser, Wolfgang [Institute of Applied Physics, Darmstadt University of Technology (Germany); Hopkinson, Mark [Dept. E and E.E, University of Sheffield (United Kingdom); Krakowski, Michel [Alcatel Thales, III-V Lab. (France)

    2008-07-01

    Quantum dot (QD) superluminescent light emitting diodes (SLEDs) provide large optical bandwidths at desired wavelengths and are therefore promising devices for incoherent light application. The intensity noise behavior of QD SLEDs is of fundamental physical interest as it provides insight into the photon emission process. We performed high precision intensity noise measurements over several decades of optical output power. For low driving currents spontaneous emission leads to Shot Noise. For high currents we find excess noise behavior with Amplified Spontaneous Emission acting as the dominant source of noise. The QD SLEDs' noise can be described as blackbody radiation noise with a limited number of optical modes. It is therefore possible to identify the SLEDs' relevant intensity noise parameters.

  1. High tunability and superluminescence in InAs mid-infrared light emitting diodes

    International Nuclear Information System (INIS)

    Sherstnev, V.V.; Krier, A.; Hill, G.

    2002-01-01

    We report on the observation of super luminescence and high spectral current tunability (181 nm) of InAs light emitting diodes operating at 3.0 μm. The source is based on an optical whispering gallery mode which is generated near the edges of the mesa and which is responsible for the superluminescence. (author)

  2. A 526 W Diode-Pumped Nd:YAG Ceramic Slab Laser

    International Nuclear Information System (INIS)

    Chen Yan-Zhong; Bo Yong; Xu Jian; Xu Yi-Ting; Xu Jia-Lin; Guo Ya-Ding; Yang Feng-Tu; Peng Qin-Jun; Cui Da-Fu; Xu Zu-Yan; Liu Wen-Bin; Jiang Ben-Xue; Kou Hua-Min; Pan Yu-Bai; Jiang Dong-Liang

    2011-01-01

    A diode-side-pumped Nd:YAG ceramic slab laser with a high power output is presented. An average power of 526 W is achieved at 1064 nm with a repetition rate of 120 Hz and a pulse width of 180 μs from a 93mm × 52mm × 8 mm ceramic slab at a pump power of 1928 W, corresponding to an optical-to-optical efficiency of 27.3%. (fundamental areas of phenomenology(including applications))

  3. Two mode optical fiber in space optics communication

    Science.gov (United States)

    Hampl, Martin

    2017-11-01

    In our contribution we propose to use of a two-mode optical fiber as a primary source in a transmitting optical head instead of the laser diode. The distribution of the optical intensity and the complex degree of the coherence on the output aperture of the lens that is irradiated by a step-index weakly guiding optical fiber is investigated. In our treatment we take into account weakly guided modes with polarization corrections to the propagation constant and unified theory of second order coherence and polarization of electromagnetic beams.

  4. A compact frequency stabilized telecom laser diode for space applications

    Science.gov (United States)

    Philippe, C.; Holleville, D.; Le Targat, R.; Wolf, P.; Leveque, T.; Le Goff, R.; Martaud, E.; Acef, O.

    2017-09-01

    We report on a Telecom laser diode (LD) frequency stabilization to a narrow iodine hyperfine line in the green range, after frequency tripling process using fibered nonlinear waveguide PPLN crystals. We have generated up to 300 mW optical power in the green range ( 514 nm) from 800 mW of infrared power ( 1542 nm), corresponding to a nonlinear conversion efficiency h = P3?/P? 36%. Less than 10 mW of the generated green power are used for Doppler-free spectroscopy of 127I2 molecular iodine, and -therefore- for the frequency stabilization purpose. The frequency tripling optical setup is very compact (test the potential of this new frequency standard based on the couple "1.5 ?m laser / iodine molecule". We have already demonstrated a preliminary frequency stability of 4.8 x 10-14 ? -1/2 with a minimum value of 6 x 10-15 reached after 50 s of integration time, conferred to a laser diode operating at 1542.1 nm. We focus now our efforts to expand the frequency stability to a longer integration time in order to meet requirements of many space experiments, such earth gravity missions, inters satellites links or space to ground communications. Furthermore, we investigate the potential of a new approach based on frequency modulation technique (FM), associated to a 3rd harmonic detection of iodine lines to increase the compactness of the optical setup.

  5. High power diode lasers emitting from 639 nm to 690 nm

    Science.gov (United States)

    Bao, L.; Grimshaw, M.; DeVito, M.; Kanskar, M.; Dong, W.; Guan, X.; Zhang, S.; Patterson, J.; Dickerson, P.; Kennedy, K.; Li, S.; Haden, J.; Martinsen, R.

    2014-03-01

    There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT's released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.

  6. Characterisation of Silicon Pad Diodes

    CERN Document Server

    Hodson, Thomas Connor

    2017-01-01

    Silicon pad sensors are used in high luminosity particle detectors because of their excellent timing resolution, radiation tolerance and possible high granularity. The effect of different design decisions on detector performance can be investigated nondestructively through electronic characterisation of the sensor diodes. Methods for making accurate measurements of leakage current and cell capacitance are described using both a standard approach with tungsten needles and an automated approach with a custom multiplexer and probing setup.

  7. Top-emitting organic light-emitting diodes.

    Science.gov (United States)

    Hofmann, Simone; Thomschke, Michael; Lüssem, Björn; Leo, Karl

    2011-11-07

    We review top-emitting organic light-emitting diodes (OLEDs), which are beneficial for lighting and display applications, where non-transparent substrates are used. The optical effects of the microcavity structure as well as the loss mechanisms are discussed. Outcoupling techniques and the work on white top-emitting OLEDs are summarized. We discuss the power dissipation spectra for a monochrome and a white top-emitting OLED and give quantitative reports on the loss channels. Furthermore, the development of inverted top-emitting OLEDs is described.

  8. A single-molecule diode

    Science.gov (United States)

    Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B.; Mayor, Marcel

    2005-01-01

    We have designed and synthesized a molecular rod that consists of two weakly coupled electronic π -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current–voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur–gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current–voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical π -systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current–voltage characteristics, similar to the phenomena in a semiconductor diode. PMID:15956208

  9. Hybrid Light-Emitting Diode Enhanced With Emissive Nanocrystals

    DEFF Research Database (Denmark)

    Kopylov, Oleksii

    This thesis investigates a new type of white light emitting hybrid diode, composed of a light emitting GaN/InGaN LED and a layer of semiconductor nanocrystals for color conversion. Unlike standard white LEDs, the device is configured to achieve high color conversion efficiency via non-radiative e......This thesis investigates a new type of white light emitting hybrid diode, composed of a light emitting GaN/InGaN LED and a layer of semiconductor nanocrystals for color conversion. Unlike standard white LEDs, the device is configured to achieve high color conversion efficiency via non...... of the hybrid diode fabrication including process techniques for GaN LED and incorporation of the nanocrystals are presented with the emphasis on the differences with standard LED processing. Results and analysis of optical and electrical characterization including photoluminescence (PL), micro-PL, time......-resolved PL and electroluminescence (EL) together with current-voltage characteristics are presented to evaluate the device performance. A clear evidence of non-radiative energy transfer was seen in the carrier dynamics of both the LED and the nanocrystals when the quantum well – nanocrystals separation...

  10. Gigashot Optical Laser Demonstrator

    Energy Technology Data Exchange (ETDEWEB)

    Deri, R. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2015-10-13

    The Gigashot Optical Laser Demonstrator (GOLD) project has demonstrated a novel optical amplifier for high energy pulsed lasers operating at high repetition rates. The amplifier stores enough pump energy to support >10 J of laser output, and employs conduction cooling for thermal management to avoid the need for expensive and bulky high-pressure helium subsystems. A prototype amplifier was fabricated, pumped with diode light at 885 nm, and characterized. Experimental results show that the amplifier provides sufficient small-signal gain and sufficiently low wavefront and birefringence impairments to prove useful in laser systems, at repetition rates up to 60 Hz.

  11. Electron injection in diodes with field emission

    International Nuclear Information System (INIS)

    Denavit, J.; Strobel, G.L.

    1986-01-01

    This paper presents self-consistent steady-state solutions of the space charge, transmitted current, and return currents in diodes with electron injection from the cathode and unlimited field emission of electrons and ions from both electrodes. Time-dependent particle simulations of the diode operation confirm the analytical results and show how these steady states are reached. The results are applicable to thermionic diodes and to photodiodes

  12. Thermometric characteristics of silicon semiconductor diodes

    International Nuclear Information System (INIS)

    Bezverkhnyaya, N.S.; Vasil'ev, L.M.; Dmitrevskij, Yu.P.; Mel'nik, Yu.M.

    1975-01-01

    To substantiate the feasibility of using silicon diodes made by the Soviet industry as detectors of temperature in the 15 - 300 K range, 25 different types of silicon diodes have been investigated. The results obtained for the thermometric characteristics of the diodes are presented in tabular form. It is shown that a stability of readings of up to 0.05 deg can be obtained [ru

  13. Thermic diode performance characteristics and design manual

    Science.gov (United States)

    Bernard, D. E.; Buckley, S.

    1979-01-01

    Thermic diode solar panels are a passive method of space and hot water heating using the thermosyphon principle. Simplified methods of sizing and performing economic analyses of solar heating systems had until now been limited to passive systems. A mathematical model of the thermic diode including its high level of stratification has been constructed allowing its performance characteristics to be studied. Further analysis resulted in a thermic diode design manual based on the f-chart method.

  14. Focusing experiments with light ion diodes

    International Nuclear Information System (INIS)

    Johnson, D.L.

    1978-01-01

    A review of recent experimental and theoretical work at Sandia Laboratories on magnetically insulated single stage ion diodes for inertial confinement fusion experiments is presented. The production, focusing, and numerical simulation of a 0.5 TW annular proton beam using the Proto I dual transmission line generator is described. The modular magnetically insulated ion diode for the Hydra generator is also described along with recent experimental results. A brief description of how an array of modular diodes similar to the Hydra magnetically insulated diode could be used on the EBFA I generator for breakeven fusion experiments is presented

  15. Diode-pumped mode-locked femtosecond Tm:CLNGG disordered crystal laser.

    Science.gov (United States)

    Ma, J; Xie, G Q; Gao, W L; Yuan, P; Qian, L J; Yu, H H; Zhang, H J; Wang, J Y

    2012-04-15

    A diode-end-pumped passively mode-locked femtosecond Tm-doped calcium lithium niobium gallium garnet (Tm:CLNGG) disordered crystal laser was demonstrated for the first time to our knowledge. With a 790 nm laser diode pumping, stable CW mode-locking operation was obtained by using a semiconductor saturable absorber mirror. The disordered crystal laser generated mode-locked pulses as short as 479 fs, with an average output power of 288 mW, and repetition rate of 99 MHz in 2 μm spectral region. © 2012 Optical Society of America

  16. Background story of the invention of efficient blue InGaN light emitting diodes

    Energy Technology Data Exchange (ETDEWEB)

    Nakamura, Shuji [University of California, Santa Barbara, CA (United States)

    2015-06-15

    Shuji Nakamura discovered p-type doping in Gallium Nitride (GaN) and developed blue, green, and white InGaN based light emitting diodes (LEDs) and blue laser diodes (LDs). His inventions made possible energy efficient, solid-state lighting systems and enabled the next generation of optical storage. Together with Isamu Akasaki and Hiroshi Amano, he is one of the three recipients of the 2014 Nobel Prize in Physics. In his Nobel lecture, Shuji Nakamura gives an overview of this research and the story of his inventions. (copyright 2015 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Progress in semiconductor laser diodes: SPIE volume 723

    International Nuclear Information System (INIS)

    Eichen, E.

    1987-01-01

    This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

  18. Wearable Optical Sensors

    KAUST Repository

    Ballard, Zachary S.

    2017-07-12

    The market for wearable sensors is predicted to grow to $5.5 billion by 2025, impacting global health in unprecedented ways. Optics and photonics will play a key role in the future of these wearable technologies, enabling highly sensitive measurements of otherwise invisible information and parameters about our health and surrounding environment. Through the implementation of optical wearable technologies, such as heart rate, blood pressure, and glucose monitors, among others, individuals are becoming more empowered to generate a wealth of rich, multifaceted physiological and environmental data, making personalized medicine a reality. Furthermore, these technologies can also be implemented in hospitals, clinics, point-of-care offices, assisted living facilities or even in patients’ homes for real-time, remote patient monitoring, creating more expeditious as well as resource-efficient systems. Several key optical technologies make such sensors possible, including e.g., optical fiber textiles, colorimetric, plasmonic, and fluorometric sensors, as well as Organic Light Emitting Diode (OLED) and Organic Photo-Diode (OPD) technologies. These emerging technologies and platforms show great promise as basic sensing elements in future wearable devices and will be reviewed in this chapter along-side currently existing fully integrated wearable optical sensors.

  19. Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV

    International Nuclear Information System (INIS)

    Etchessahar, Bertrand; Bicrel, Béatrice; Cassany, Bruno; Desanlis, Thierry; Voisin, Luc; Hébert, David; Bernigaud, Virgile; Magnin, Laurent; Nicolas, Rémi; Poulet, Frédéric; Tailleur, Yaël; Caron, Michel; Cartier, Frédéric; Cartier, Stéphanie; Hourdin, Laurent; Rosol, Rodolphe; Toury, Martial; Delbos, Christophe; Garrigues, Alain; Soleilhavoup, Isabelle

    2012-01-01

    comprehensive characterization of the diode, both optical and x-ray diagnostics were used, including high speed multi-image ICCD (intensified CCD) cameras, streak camera, dosimeters, spot size measurements, and pinhole cameras. A set of new results have been obtained through this study. The plasma emission from the anode and cathode surfaces and its expansion appear to be critical for the diode functioning. Also, for the first time, potential sources of diode instability were identified. Finally, an optimal and stable diode configuration was found with the following parameters: 52 rad at 1 m (in Al) and 2.2 mm spot size.

  20. Study and optimization of negative polarity rod pinch diode as flash radiography source at 4.5 MV

    Energy Technology Data Exchange (ETDEWEB)

    Etchessahar, Bertrand; Bicrel, Beatrice; Cassany, Bruno; Desanlis, Thierry; Voisin, Luc; Hebert, David [CEA, DAM, CESTA, F-33114 Le Barp (France); Bernigaud, Virgile; Magnin, Laurent; Nicolas, Remi; Poulet, Frederic; Tailleur, Yaeel [CEA, DAM, VALDUC, F-21120 Is sur Tille (France); Caron, Michel; Cartier, Frederic; Cartier, Stephanie; Hourdin, Laurent; Rosol, Rodolphe; Toury, Martial; Delbos, Christophe; Garrigues, Alain; Soleilhavoup, Isabelle [CEA, DAM, GRAMAT, F-46500 Gramat (France); and others

    2012-09-15

    achieve the most comprehensive characterization of the diode, both optical and x-ray diagnostics were used, including high speed multi-image ICCD (intensified CCD) cameras, streak camera, dosimeters, spot size measurements, and pinhole cameras. A set of new results have been obtained through this study. The plasma emission from the anode and cathode surfaces and its expansion appear to be critical for the diode functioning. Also, for the first time, potential sources of diode instability were identified. Finally, an optimal and stable diode configuration was found with the following parameters: 52 rad at 1 m (in Al) and 2.2 mm spot size.

  1. Optics/Optical Diagnostics Laboratory

    Data.gov (United States)

    Federal Laboratory Consortium — The Optics/Optical Diagnostics Laboratory supports graduate instruction in optics, optical and laser diagnostics and electro-optics. The optics laboratory provides...

  2. Anode plasma and focusing reb diodes

    International Nuclear Information System (INIS)

    Goldstein, S.A.; Swain, D.W.; Hadley, G.R.; Mix, L.P.

    1975-01-01

    The use of electrical, optical, x-ray, and particle diagnostics to characterize the production of anode plasma and to monitor its influence on beam generation and focusing is reviewed. Studies using the Nereus accelerator show that after cathode turn-on, deposition of several kJ/gm on the anode is necessary before ions from hydrocarbons, adsorbed gases, and heavier metallic species are detected. The actual time at which ions are liberated depends on several factors, one of which is the specific heat of the anode substrate. Once formed, anode ions cross the A-K gap (with an energy equal to the diode voltage) and interact with the cathode to produce an axially peaked beam profile, a ''pinch'' which does not follow the critical current criterion. Experiments with externally generated anode plasma show that this type of pinch can be attracted to localized areas on the anode. Preliminary observations on Hydra indicate the anode plasma composition is similar to that on Nereus. The effect of this plasma on pinch dynamics currently is under investigation

  3. Influence of Pentacene Interface Layer in ITO/α-NPD/Alq3/Al Organic Light Emitting Diodes by Time-Resolved Electric-Field-Induced Optical Second-Harmonic Generation Measurement.

    Science.gov (United States)

    Oda, Yoshiaki; Sadakata, Atsuo; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

    2016-04-01

    By using I-V, EL-V, displacement current measurement (DCM) and time-resolved electric-field-induced optical second-harmonic generation (TR-EFISHG) measurement, we studied the influence of interface pentacene layer inserted between ITO and a-NPD layers in ITO/α-NPD/Alq3/Al OLEDs. All experiments were carried out for the OLEDs with and without a pentacene interface layer. The I-V and EL-V measurements showed the decrease of operating voltage of EL, the DCM showed the lowering of inception voltage of carrier injection by inserting a pentacene interface layer. The TR-EFISHG measurement showed the faster accumulation of holes at the interface between the a-NPD and Alq3 layers, which resulted in the relaxation of electric field of a-NPD layer accomplished by the increase of the conductivity and the increase of the electric field in the Alq3 layer. We conclude that TR-EFISHG measurement is helpful for understanding I-V and EL-V characteristics, and can be combined with other methods to give significant information which are impacted by the interface layer.

  4. Selective isotope determination of lanthanum by diode-laser-initiated resonance-ionization mass spectrometry

    International Nuclear Information System (INIS)

    Young, J.P.; Shaw, R.W.

    1995-01-01

    A diode-laser step has been incorporated into a resonance-ionization mass spectrometry optical excitation process to enhance the isotopic selectivity of the technique. Lanthanum isotope ratio enhancements as high as 10 3 were achieved by use of a single-frequency cw diode laser tuned to excite the first step of a three-step excitation--ionization optical process; the subsequent steps were excited by use of a pulsed dye laser. Applying the same optical technique, we measured atomic hyperfine constants for the high-lying even-parity 4 D 5/2 state of lanthanum at 30 354 cm --1 . The general utility of this spectral approach is discussed

  5. Generation of single-frequency tunable green light in a coupled ring tapered diode laser cavity

    DEFF Research Database (Denmark)

    Jensen, Ole Bjarlin; Petersen, Paul Michael

    2013-01-01

    in the broad wavelength range from 1049 nm to 1093 nm and the beam propagation factor is improved from M2 = 2.8 to below 1.1. The laser frequency is automatically locked to the cavity resonance frequency using optical feedback. Furthermore, we show that this adaptive external cavity approach leads to efficient......We report the realization of a tapered diode laser operated in a coupled ring cavity that significantly improves the coherence properties of the tapered laser and efficiently generates tunable light at the second harmonic frequency. The tapered diode laser is tunable with single-frequency output...... frequency doubling. More than 500 mW green output power is obtained by placing a periodically poled LiNbO3 crystal in the external cavity. The single frequency green output from the laser system is tunable in the 530 nm to 533 nm range limited by the LiNbO3 crystal. The optical to optical conversion...

  6. Improving the beam quality of high-power laser diodes by introducing lateral periodicity into waveguides

    Science.gov (United States)

    Sobczak, Grzegorz; DÄ browska, ElŻbieta; Teodorczyk, Marian; Kalbarczyk, Joanna; MalÄ g, Andrzej

    2013-01-01

    Low quality of the optical beam emitted by high-power laser diodes is the main disadvantage of these devices. The two most important reasons are highly non-Gaussian beam profile with relatively wide divergence in the junction plane and the filamentation effect. Designing laser diode as an array of narrow, close to each other single-mode waveguides is one of the solutions to this problem. In such devices called phase locked arrays (PLA) there is no room for filaments formation. The consequence of optical coupling of many single-mode waveguides is the device emission in the form of few almost diffraction limited beams. Because of losses in regions between active stripes the PLA devices have, however, somewhat higher threshold current and lower slope efficiencies compared to wide-stripe devices of similar geometry. In this work the concept of the high-power laser diode resonator consisted of joined PLA and wide stripe segments is proposed. Resulting changes of electro-optical characteristics of PLA are discussed. The devices are based on the asymmetric heterostructure designed for improvement of the catastrophic optical damage threshold as well as thermal and electrical resistances. Due to reduced distance from the active layer to surface in this heterostructure, better stability of current (and gain) distribution with changing drive level is expected. This could lead to better stability of optical field distribution and supermodes control. The beam divergence reduction in the direction perpendicular of the junction plane has been also achieved.

  7. Luminescence and the light emitting diode the basics and technology of leds and the luminescence properties of the materials

    CERN Document Server

    Williams, E W; Pamplin, BR

    2013-01-01

    Luminescence and the Light Emitting Diode: The Basics and Technology of LEDS and the Luminescence Properties of the Materials focuses on the basic physics and technology of light emitting diodes (LEDS) and pn junction lasers as well as their luminescence properties. Optical processes in semiconductors and the useful devices which can be made are discussed. Comprised of 10 chapters, this book begins with an introduction to the crystal structure and growth, as well as the optical and electrical properties of LED materials. The detailed fabrication of the LED is then considered, along with the lu

  8. Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

    Energy Technology Data Exchange (ETDEWEB)

    Martens, M.; Kuhn, C.; Ziffer, E.; Simoneit, T.; Rass, J.; Wernicke, T. [Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Kueller, V.; Knauer, A.; Einfeldt, S.; Weyers, M. [Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany); Kneissl, M. [Institute of Solid State Physics, Technische Universität Berlin, Hardenbergstr. 36, EW 6-1, 10623 Berlin (Germany); Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik, Gustav-Kirchhoff-Str. 4, 12489 Berlin (Germany)

    2016-04-11

    Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fractions are compared. The heterostructures contain all elements that are needed for a current-injection laser diode including cladding and waveguide layers as well as an AlGaN quantum well active region emitting near 270 nm. We found that with increasing aluminum content in the p-AlGaN cladding, the diode turn-on voltage increases, while the series resistance slightly decreases. By introducing an SPSL instead of bulk layers, the operating voltage is significantly reduced. A gain guided broad area laser diode structure with transparent p-Al{sub 0.70}Ga{sub 0.30}N waveguide layers and a transparent p-cladding with an average aluminum content of 81% was designed for strong confinement of the transverse optical mode and low optical losses. Using an optimized SPSL, this diode could sustain current densities of more than 4.5 kA/cm{sup 2}.

  9. Low absorption loss p-AlGaN superlattice cladding layer for current-injection deep ultraviolet laser diodes

    International Nuclear Information System (INIS)

    Martens, M.; Kuhn, C.; Ziffer, E.; Simoneit, T.; Rass, J.; Wernicke, T.; Kueller, V.; Knauer, A.; Einfeldt, S.; Weyers, M.; Kneissl, M.

    2016-01-01

    Current injection into AlGaN-based laser diode structures with high aluminum mole fractions for deep ultraviolet emission is investigated. The electrical characteristics of laser diode structures with different p-AlGaN short period superlattice (SPSL) cladding layers with various aluminum mole fractions are compared. The heterostructures contain all elements that are needed for a current-injection laser diode including cladding and waveguide layers as well as an AlGaN quantum well active region emitting near 270 nm. We found that with increasing aluminum content in the p-AlGaN cladding, the diode turn-on voltage increases, while the series resistance slightly decreases. By introducing an SPSL instead of bulk layers, the operating voltage is significantly reduced. A gain guided broad area laser diode structure with transparent p-Al_0_._7_0Ga_0_._3_0N waveguide layers and a transparent p-cladding with an average aluminum content of 81% was designed for strong confinement of the transverse optical mode and low optical losses. Using an optimized SPSL, this diode could sustain current densities of more than 4.5 kA/cm"2.

  10. Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes

    Science.gov (United States)

    Espenlaub, Andrew C.; Alhassan, Abdullah I.; Nakamura, Shuji; Weisbuch, Claude; Speck, James S.

    2018-04-01

    We report on measurements of the photo-modulated current-voltage and electroluminescence characteristics of forward biased single quantum well, blue InGaN/GaN light emitting diodes with and without electron blocking layers. Low intensity resonant optical excitation of the quantum well was observed to induce an additional forward current at constant forward diode bias, in contrast to the usual sense of the photocurrent in photodiodes and solar cells, as well as an increased electroluminescence intensity. The presence of an electron blocking layer only slightly decreased the magnitude of the photo-induced current at constant forward bias. Photo-modulation at constant forward diode current resulted in a reduced diode bias under optical excitation. We argue that this decrease in diode bias at constant current and the increase in forward diode current at constant applied bias can only be due to additional hot carriers being ejected from the quantum well as a result of an increased Auger recombination rate within the quantum well.

  11. Laser source for dimensional metrology: investigation of an iodine stabilized system based on narrow linewidth 633 nm DBR diode

    Czech Academy of Sciences Publication Activity Database

    Řeřucha, Šimon; Yacoot, A.; Pham, Minh Tuan; Čížek, Martin; Hucl, Václav; Lazar, Josef; Číp, Ondřej

    2017-01-01

    Roč. 28, č. 4 (2017), s. 1-11, č. článku 045204. ISSN 0957-0233 R&D Projects: GA ČR GB14-36681G; GA MŠk(CZ) LO1212; GA MŠk ED0017/01/01; GA TA ČR TE01020233 Institutional support: RVO:68081731 Keywords : optical metrology * DBR laser diode * frequency stabilization * laser interferometry * dimensional metrology * iodine stabilization * displacement measurement Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 1.585, year: 2016

  12. Hyperchaotic Dynamics for Light Polarization in a Laser Diode

    Science.gov (United States)

    Bonatto, Cristian

    2018-04-01

    It is shown that a highly randomlike behavior of light polarization states in the output of a free-running laser diode, covering the whole Poincaré sphere, arises as a result from a fully deterministic nonlinear process, which is characterized by a hyperchaotic dynamics of two polarization modes nonlinearly coupled with a semiconductor medium, inside the optical cavity. A number of statistical distributions were found to describe the deterministic data of the low-dimensional nonlinear flow, such as lognormal distribution for the light intensity, Gaussian distributions for the electric field components and electron densities, Rice and Rayleigh distributions, and Weibull and negative exponential distributions, for the modulus and intensity of the orthogonal linear components of the electric field, respectively. The presented results could be relevant for the generation of single units of compact light source devices to be used in low-dimensional optical hyperchaos-based applications.

  13. New Optoelectronic Technology Simplified for Organic Light Emitting Diode (OLED

    Directory of Open Access Journals (Sweden)

    Andre F. S. Guedes

    2014-06-01

    Full Text Available The development of Organic Light Emitting Diode (OLED, using an optically transparent substrate material and organic semiconductor materials, has been widely utilized by the electronic industry when producing new technological products. The OLED are the base Poly (3,4-ethylenedioxythiophene, PEDOT, and Polyaniline, PANI, were deposited in Indium Tin Oxide, ITO, and characterized by UV-Visible Spectroscopy (UV-Vis, Optical Parameters (OP and Scanning Electron Microscopy (SEM. In addition, the thin film obtained by the deposition of PANI, prepared in perchloric acid solution, was identified through PANI-X1. The result obtained by UV-Vis has demonstrated that the Quartz/ITO/PEDOT/PANI-X1 layer does not have displacement of absorption for wavelengths greaters after spin-coating and electrodeposition. Thus, the spectral irradiance of the OLED informed the irradiance of 100 W/m2, and this result, compared with the standard Light Emitting Diode (LED, has indicated that the OLED has higher irradiance. After 1000 hours of electrical OLED tests, the appearance of nanoparticles visible for images by SEM, to the migration process of organic semiconductor materials, was present, then. Still, similar to the phenomenon of electromigration observed in connections and interconnections of microelectronic devices, the results have revealed a new mechanism of migration, which raises the passage of electric current in OLED.

  14. Narrow linewidth operation of a spectral beam combined diode laser bar.

    Science.gov (United States)

    Zhu, Zhanda; Jiang, Menghua; Cheng, Siqi; Hui, Yongling; Lei, Hong; Li, Qiang

    2016-04-20

    Our experiment is expected to provide an approach for realizing ultranarrow linewidth for a spectral beam combined diode laser bar. The beams of a diode laser bar are combined in a fast axis after a beam transformation system. With the help of relay optics and a transform lens with a long focal length of 1.5 m, the whole wavelength of a spectral combined laser bar can be narrowed down to 0.48 nm from more than 10 nm. We have achieved 56.7 W cw from a 19-element single bar with an M2 of 1.4  (in horizontal direction)×11.6  (in vertical direction). These parameters are good evidence that all the beams from the diode laser bar are combined together to increase the brightness.

  15. Fast random-number generation using a diode laser's frequency noise characteristic

    Science.gov (United States)

    Takamori, Hiroki; Doi, Kohei; Maehara, Shinya; Kawakami, Kohei; Sato, Takashi; Ohkawa, Masashi; Ohdaira, Yasuo

    2012-02-01

    Random numbers can be classified as either pseudo- or physical-random, in character. Pseudo-random numbers are generated by definite periodicity, so, their usefulness in cryptographic applications is somewhat limited. On the other hand, naturally-generated physical-random numbers have no calculable periodicity, thereby making them ideal for the task. Diode lasers' considerable wideband noise gives them tremendous capacity for generating physical-random numbers, at a high rate of speed. We measured a diode laser's output with a fast photo detector, and evaluated the binary-numbers from the diode laser's frequency noise characteristics. We then identified and evaluated the binary-number-line's statistical properties. We also investigate the possibility that much faster physical-random number parallel-generation is possible, using separate outputs of different optical-path length and character, which we refer to as "coherence collapse".

  16. High-power fiber-coupled 100W visible spectrum diode lasers for display applications

    Science.gov (United States)

    Unger, Andreas; Küster, Matthias; Köhler, Bernd; Biesenbach, Jens

    2013-02-01

    Diode lasers in the blue and red spectral range are the most promising light sources for upcoming high-brightness digital projectors in cinemas and large venue displays. They combine improved efficiency, longer lifetime and a greatly improved color space compared to traditional xenon light sources. In this paper we report on high-power visible diode laser sources to serve the demands of this emerging market. A unique electro-optical platform enables scalable fiber coupled sources at 638 nm with an output power of up to 100 W from a 400 μm NA0.22 fiber. For the blue diode laser we demonstrate scalable sources from 5 W to 100 W from a 400 μm NA0.22 fiber.

  17. outcome of diode laser cyclophotocoagulation in neovascular ...

    African Journals Online (AJOL)

    Duke

    including, ruby, ND:YAG, argon, krypton and, more recently, trans scleral cyclophotocoagulation with the diode laser, which has been shown to be more effective with less side effects than the others. The diode laser, 810nm, has. 4,5 greater melanin absorption compared to other lasers. Of the various cyclodestructive laser ...

  18. Laser diode package with enhanced cooling

    Science.gov (United States)

    Deri, Robert J [Pleasanton, CA; Kotovsky, Jack [Oakland, CA; Spadaccini, Christopher M [Oakland, CA

    2011-09-13

    A laser diode package assembly includes a reservoir filled with a fusible metal in close proximity to a laser diode. The fusible metal absorbs heat from the laser diode and undergoes a phase change from solid to liquid during the operation of the laser. The metal absorbs heat during the phase transition. Once the laser diode is turned off, the liquid metal cools off and resolidifies. The reservoir is designed such that that the liquid metal does not leave the reservoir even when in liquid state. The laser diode assembly further includes a lid with one or more fin structures that extend into the reservoir and are in contact with the metal in the reservoir.

  19. Carbon nanotube Schottky diode: an atomic perspective

    International Nuclear Information System (INIS)

    Bai, P; Li, E; Kurniawan, O; Koh, W S; Lam, K T

    2008-01-01

    The electron transport properties of semiconducting carbon nanotube (SCNT) Schottky diodes are investigated with atomic models using density functional theory and the non-equilibrium Green's function method. We model the SCNT Schottky diode as a SCNT embedded in the metal electrode, which resembles the experimental set-up. Our study reveals that the rectification behaviour of the diode is mainly due to the asymmetric electron transmission function distribution in the conduction and valence bands and can be improved by changing metal-SCNT contact geometries. The threshold voltage of the diode depends on the electron Schottky barrier height which can be tuned by altering the diameter of the SCNT. Contrary to the traditional perception, the metal-SCNT contact region exhibits better conductivity than the other parts of the diode

  20. Tunable diode-pumped-LNA laser

    International Nuclear Information System (INIS)

    Cassimi, A.; Hardy, V.; Hamel, J.; Leduc, M.

    1987-01-01

    Diode-pumped crystals provided recently new compact laser devices. We report the first end pumping of a La x Nd 1-x MgAl 11 O 19 (LNA) crystal using a 200mW diode array (Spectra Diode Lab). We also report the first results obtained with a 1mW diode (SONY). This C.W. laser can be tuned from 1.048μm to 1.086μm. Without selective elements in the cavity, the laser emits around 1.054μm with a threshold of 24mW and a slope efficiency of 4.4% (output mirror of transmission T = 1%) when pumped by the diode array. With the selective elements, the threshold increases to 100mW and we obtain a power of 4mW for a pump power of 200mW