Efficient third harmonic generation of a CW-fibered 1.5 µm laser diode

Science.gov (United States)

Philippe, Charles; Chea, Erick; Nishida, Yoshiki; du Burck, Frédéric; Acef, Ouali

2016-10-01

We report on frequency tripling of CW-Telecom laser diode using two cascaded PPLN ridge nonlinear crystals, both used in single-pass configuration. All optical components used for this development are fibered, leading to a very compact and easy to use optical setup. We have generated up to 290 mW optical power in the green range, from 800 mW only of infrared power around 1.54 µm. This result corresponds to an optical conversion efficiency P 3 ω / P ω > 36 %. To our knowledge, this is best value ever demonstrated up today for a CW-third harmonic generation in single-pass configuration. This frequency tripling experimental setup was tested over more than 2 years of continuous operation, without any interruption. The compactness and the reliability of our device make it very suitable as a transportable optical oscillator. In particular, it paves the way for embedded applications thanks to the high level of long-term stability of the optical alignments.

Testing of high current by-pass diodes for the LHC magnet quench protection

International Nuclear Information System (INIS)

Berland, V.; Hagedorn, D.; Rodriguez-Mateos, F.

1996-01-01

Within the framework of the Large Hadron Collider (LHC) R and D program, CERN is performing experiments to establish the current carrying capability of irradiated diodes at liquid Helium temperatures for the superconducting magnet protection. Even if the diodes are degraded by radiation dose and neutron fluence, they must be able to support the by-pass current during a magnet quench and the de-excitation of the superconducting magnet ring. During this discharge, the current in the diode reaches a maximum value up to 13 kA and decreased with an exponential time constant of 100 s. Two sets of 75 mm wafer diameter epitaxial diodes, one irradiated and one non-irradiated, were submitted to this experiment. The irradiated diodes have been exposed to radiation in the accelerator environment up to 20 kGy and then annealed at room temperature. After the radiation exposure the diodes had shown a degradation of forward voltage of 50% which reduced to about 14% after the thermal annealing. During the long duration high current tests, one of the diodes was destroyed and the other two irradiated diodes showed a different behavior compared with non-irradiated diodes

Stable CW Single-Frequency Operation of Fabry-Perot Laser Diodes by Self-Injection Phase Locking

Science.gov (United States)

Duerksen, Gary L.; Krainak, Michael A.

1999-01-01

Previously, single-frequency semiconductor laser operation using fiber Bragg gratings has been achieved by two methods: 1) use of the FBG as the output coupler for an anti-reflection-coated semiconductor gain element'; 2) pulsed operation of a gain-switched Fabry-Perot laser diode with FBG-optical and RF-electrical feedback. Here, we demonstrate CW single frequency operation from a non-AR coated Fabry-Perot laser diode using only FBG optical feedback. We coupled a nominal 935 run-wavelength Fabry-Perot laser diode to an ultra narrow band (18 pm) FBG. When tuned by varying its temperature, the laser wavelength is pulled toward the centerline of the Bragg grating, and the spectrum of the laser output is seen to fall into three discrete stability regimes as measured by the side-mode suppression ratio.

Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2011-01-01

For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W...... of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2....... The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected....

Frequency-doubled DBR-tapered diode laser for direct pumping of Ti:sapphire lasers generating sub-20 fs pulses.

Science.gov (United States)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael

2011-06-20

For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.

Determination of the optical constants of polymer light-emitting diode films from single reflection measurements

International Nuclear Information System (INIS)

Zhu Dexi; Shen Weidong; Ye Hui; Liu Xu; Zhen Hongyu

2008-01-01

We present a simple and fast method to determine the optical constant and physical thickness of polymer films from a single reflectivity measurement. A self-consistent dispersion formula of the Forouhi-Bloomer model was introduced to fit the measured spectral curves by a modified 'Downhill' simplex algorithm. Four widely used polymer light-emitting diodes materials: poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene], poly(9,9-dioctylfluoreny-2,7-diyl) (PFO), poly(N-vinyl carbazole) and poly(3,4-ethylene dioxythiophene) : poly(styrenesulfonate) were investigated by this technique. The refractive indices over the whole visible region as well as the optical band gap extracted by this method agree well with those reported in the literature. The determined physical thicknesses present a deviation less than 4% compared with the experimental values measured by the stylus profiler. The influence of scattering loss on the fitted results is discussed to demonstrate the applicability of this technology for polymer films.

Narrow optical linewidths and spin pumping on charge-tunable close-to-surface self-assembled quantum dots in an ultrathin diode

Science.gov (United States)

Löbl, Matthias C.; Söllner, Immo; Javadi, Alisa; Pregnolato, Tommaso; Schott, Rüdiger; Midolo, Leonardo; Kuhlmann, Andreas V.; Stobbe, Søren; Wieck, Andreas D.; Lodahl, Peter; Ludwig, Arne; Warburton, Richard J.

2017-10-01

We demonstrate full charge control, narrow optical linewidths, and optical spin pumping on single self-assembled InGaAs quantum dots embedded in a 162.5 -nm -thin diode structure. The quantum dots are just 88 nm from the top GaAs surface. We design and realize a p -i -n -i -n diode that allows single-electron charging of the quantum dots at close-to-zero applied bias. In operation, the current flow through the device is extremely small resulting in low noise. In resonance fluorescence, we measure optical linewidths below 2 μ eV , just a factor of 2 above the transform limit. Clear optical spin pumping is observed in a magnetic field of 0.5 T in the Faraday geometry. We present this design as ideal for securing the advantages of self-assembled quantum dots—highly coherent single-photon generation, ultrafast optical spin manipulation—in the thin diodes required in quantum nanophotonics and nanophononics applications.

Holograms for laser diode: Single mode optical fiber coupling

Science.gov (United States)

Fuhr, P. L.

1982-01-01

The low coupling efficiency of semiconductor laser emissions into a single mode optical fibers place a severe restriction on their use. Associated with these conventional optical coupling techniques are stringent alignment sensitivities. Using holographic elements, the coupling efficiency may be increased and the alignment sensitivity greatly reduced. Both conventional and computer methods used in the generation of the holographic couplers are described and diagrammed. The reconstruction geometries used are shown to be somewhat restrictive but substantially less rigid than their conventional optical counterparts. Single and double hologram techniques are examined concerning their respective ease of fabrication and relative merits.

An Improved Memristive Diode Bridge-Based Band Pass Filter Chaotic Circuit

Directory of Open Access Journals (Sweden)

Quan Xu

2017-01-01

Full Text Available By replacing a series resistor in active band pass filter (BPF with an improved memristive diode bridge emulator, a third-order memristive BPF chaotic circuit is presented. The improved memristive diode bridge emulator without grounded limitation is equivalently achieved by a diode bridge cascaded with only one inductor, whose fingerprints of pinched hysteresis loop are examined by numerical simulations and hardware experiments. The memristive BPF chaotic circuit has only one zero unstable saddle point but causes complex dynamical behaviors including period, chaos, period doubling bifurcation, and coexisting bifurcation modes. Specially, it should be highly significant that two kinds of bifurcation routes are displayed under different initial conditions and the coexistence of three different topological attractors is found in a narrow parameter range. Moreover, hardware circuit using discrete components is fabricated and experimental measurements are performed, upon which the numerical simulations are validated. Notably, the proposed memristive BPF chaotic circuit is only third-order and has simple topological structure.

Auger-generated hot carrier current in photo-excited forward biased single quantum well blue light emitting diodes

Science.gov (United States)

Espenlaub, Andrew C.; Alhassan, Abdullah I.; Nakamura, Shuji; Weisbuch, Claude; Speck, James S.

2018-04-01

We report on measurements of the photo-modulated current-voltage and electroluminescence characteristics of forward biased single quantum well, blue InGaN/GaN light emitting diodes with and without electron blocking layers. Low intensity resonant optical excitation of the quantum well was observed to induce an additional forward current at constant forward diode bias, in contrast to the usual sense of the photocurrent in photodiodes and solar cells, as well as an increased electroluminescence intensity. The presence of an electron blocking layer only slightly decreased the magnitude of the photo-induced current at constant forward bias. Photo-modulation at constant forward diode current resulted in a reduced diode bias under optical excitation. We argue that this decrease in diode bias at constant current and the increase in forward diode current at constant applied bias can only be due to additional hot carriers being ejected from the quantum well as a result of an increased Auger recombination rate within the quantum well.

Ultra-Fast All-Optical Self-Aware Protection Switching Based on a Bistable Laser Diode

DEFF Research Database (Denmark)

An, Yi; Vukovic, Dragana; Lorences Riesgo, Abel

2014-01-01

We propose a novel concept of all-optical protection switching with link failure automatic awareness based on AOWFF. The scheme is experimentally demonstrated using a single MG-Y laser diode with a record switching time ~200 ps....

Generation of single-frequency tunable green light in a coupled ring tapered diode laser cavity

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Petersen, Paul Michael

2013-01-01

in the broad wavelength range from 1049 nm to 1093 nm and the beam propagation factor is improved from M2 = 2.8 to below 1.1. The laser frequency is automatically locked to the cavity resonance frequency using optical feedback. Furthermore, we show that this adaptive external cavity approach leads to efficient......We report the realization of a tapered diode laser operated in a coupled ring cavity that significantly improves the coherence properties of the tapered laser and efficiently generates tunable light at the second harmonic frequency. The tapered diode laser is tunable with single-frequency output...... frequency doubling. More than 500 mW green output power is obtained by placing a periodically poled LiNbO3 crystal in the external cavity. The single frequency green output from the laser system is tunable in the 530 nm to 533 nm range limited by the LiNbO3 crystal. The optical to optical conversion...

Gain claming in single-pass and double-pass L-band erbium-doped fiber amplifiers

International Nuclear Information System (INIS)

Harun, S.W.; Ahmad, H.

2004-01-01

Gain clamping is demonstrated in single-pass and double-pass long wavelength band erbium-doped fiber amplifiers. A C/L-band wavelength division multiplexing coupler is used in single-pass system to generate a laser at 1566 nm. The gain for the amplifier is clamped at 15.5 dB with gain variation of less than 0.2 dB from input signal power of -40 to -14 dBm with almost negligible noise figure penalty. However, the flatness of gain spectrum is slightly degraded due to the un-optimisation of erbium-doped fiber length. The advantage of this configuration is that the oscillating light does not appear at the output of the amplifier. A highly efficient gain-clamped long wavelength band erbium-doped fiber amplifiers with improved noise figure characteristic is demonstrated by simply adding a broadband conventional band fiber Bragg grating in double pass system. The combination of the fiber Bragg grating and optical circulator has created laser in the cavity for gain clamping. By adjusting the power combination of pumps 1 and 2, the clamped gain level can be controlled. The amplifier gain is clamped at 28.1 dB from -40 to -25 dBm with gain variation of less than 0.5 dB by setting the pumps 1 and 2 at 59.5 and 50.6 mW, respectively. The gain is also flat from 1574 nm to 1604 nm with gain variation of less than 3 dB. The corresponding noise figure varies from 5.6 to 7.6 dB, which is 0.8 to 2.6 dB reduced compared to those of unclamped amplifier (Authors)

Laser diode technology for coherent communications

Science.gov (United States)

Channin, D. J.; Palfrey, S. L.; Toda, M.

1989-01-01

The effect of diode laser characteristics on the overall performance capabilities of coherent communication systems is discussed. In particular, attention is given to optical performance issues for diode lasers in coherent systems, measurements of key performance parameters, and optical requirements for coherent single-channel and multichannel communication systems. The discussion also covers limitations imposed by diode laser optical performance on multichannel system capabilities and implications for future developments.

Analysis of InP-based single photon avalanche diodes based on a single recess-etching process

Science.gov (United States)

Lee, Kiwon

2018-04-01

Effects of the different etching techniques have been investigated by analyzing electrical and optical characteristics of two-types of single-diffused single photon avalanche diodes (SPADs). The fabricated two-types of SPADs have no diffusion depth variation by using a single diffusion process at the same time. The dry-etched SPADs show higher temperature dependence of a breakdown voltage, larger dark-count-rate (DCR), and lower photon-detection-efficiency (PDE) than those of the wet-etched SPADs due to plasma-induced damage of dry-etching process. The results show that the dry etching damages can more significantly affect the performance of the SPADs based on a single recess-etching process.

An All-Silicon Passive Optical Diode

OpenAIRE

Fan, Li; Wang, Jian; Varghese, Leo T.; Shen, Hao; Niu, Ben; Xuan, Yi; Weiner, Andrew M.; Qi, Minghao

2011-01-01

A passive optical diode effect would be useful for on-chip optical information processing but has been difficult to achieve. Using a method based on optical nonlinearity, we demonstrate a forward-backward transmission ratio of up to 28 decibels within telecommunication wavelengths. Our device, which uses two silicon rings 5 micrometers in radius, is passive yet maintains optical nonreciprocity for a broad range of input power levels, and it performs equally well even if the backward input pow...

Generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser in a cascade of nonlinear crystals

DEFF Research Database (Denmark)

Hansen, Anders Kragh; Jensen, Ole Bjarlin; Sumpf, Bernd

2014-01-01

Many applications, e.g., within biomedicine stand to benefit greatly from the development of diode laser-based multi- Watt efficient compact green laser sources. The low power of existing diode lasers in the green area (about 100 mW) means that the most promising approach remains nonlinear...... frequency conversion of infrared tapered diode lasers. Here, we describe the generation of 3.5 W of diffraction-limited green light from SHG of a single tapered diode laser, itself yielding 10 W at 1063 nm. This SHG is performed in single pass through a cascade of two PPMgO:LN crystals with re...... power of 3.5 W corresponds to a power enhancement greater than 2 compared to SHG in each of the crystals individually and is the highest visible output power generated by frequency conversion of a single diode laser. Such laser sources provide the necessary pump power for biophotonics applications...

Precision Spectroscopy, Diode Lasers, and Optical Frequency Measurement Technology

Science.gov (United States)

Hollberg, Leo (Editor); Fox, Richard (Editor); Waltman, Steve (Editor); Robinson, Hugh

1998-01-01

This compilation is a selected set of reprints from the Optical Frequency Measurement Group of the Time and Frequency Division of the National Institute of Standards and Technology, and consists of work published between 1987 and 1997. The two main programs represented here are (1) development of tunable diode-laser technology for scientific applications and precision measurements, and (2) research toward the goal of realizing optical-frequency measurements and synthesis. The papers are organized chronologically in five, somewhat arbitrarily chosen categories: Diode Laser Technology, Tunable Laser Systems, Laser Spectroscopy, Optical Synthesis and Extended Wavelength Coverage, and Multi-Photon Interactions and Optical Coherences.

Wave-optics simulation of the double-pass beam propagation in modulating retro-reflector FSO systems using a corner cube reflector.

Science.gov (United States)

Yang, Guowei; You, Shengzui; Bi, Meihua; Fan, Bing; Lu, Yang; Zhou, Xuefang; Li, Jing; Geng, Hujun; Wang, Tianshu

2017-09-10

Free-space optical (FSO) communication utilizing a modulating retro-reflector (MRR) is an innovative way to convey information between the traditional optical transceiver and the semi-passive MRR unit that reflects optical signals. The reflected signals experience turbulence-induced fading in the double-pass channel, which is very different from that in the traditional single-pass FSO channel. In this paper, we consider the corner cube reflector (CCR) as the retro-reflective device in the MRR. A general geometrical model of the CCR is established based on the ray tracing method to describe the ray trajectory inside the CCR. This ray tracing model could treat the general case that the optical beam is obliquely incident on the hypotenuse surface of the CCR with the dihedral angle error and surface nonflatness. Then, we integrate this general CCR model into the wave-optics (WO) simulation to construct the double-pass beam propagation simulation. This double-pass simulation contains the forward propagation from the transceiver to the MRR through the atmosphere, the retro-reflection of the CCR, and the backward propagation from the MRR to the transceiver, which can be realized by a single-pass WO simulation, the ray tracing CCR model, and another single-pass WO simulation, respectively. To verify the proposed CCR model and double-pass WO simulation, the effective reflection area, the incremental phase, and the reflected beam spot on the transceiver plane of the CCR are analyzed, and the numerical results are in agreement with the previously published results. Finally, we use the double-pass WO simulation to investigate the double-pass channel in the MRR FSO systems. The histograms of the turbulence-induced fading in the forward and backward channels are obtained from the simulation data and are fitted by gamma-gamma (ΓΓ) distributions. As the two opposite channels are highly correlated, we model the double-pass channel fading by the product of two correlated �

Board-to-Board Free-Space Optical Interconnections Passing through Boards for a Bookshelf-Assembled Terabit-Per-Second-Class ATM Switch.

Science.gov (United States)

Hirabayashi, K; Yamamoto, T; Matsuo, S; Hino, S

1998-05-10

We propose free-space optical interconnections for a bookshelf-assembled terabit-per-second-class ATM switch. Thousands of arrayed optical beams, each having a rate of a few gigabits per second, propagate vertically to printed circuit boards, passing through some boards, and are connected to arbitrary transmitters and receivers on boards by polarization controllers and prism arrays. We describe a preliminary experiment using a 1-mm-pitch 2 x 2 beam-collimator array that uses vertical-cavity surface-emitting laser diodes. These optical interconnections can be made quite stable in terms of mechanical shock and temperature fluctuation by the attachment of reinforcing frames to the boards and use of an autoalignment system.

Cryogenic Testing of High Current By-Pass Diode Stacks for the Protection of the Superconducting Magnets in the LHC

Science.gov (United States)

Gharib, A.; Hagedorn, D.; Della Corte, A.; Fiamozzi Zignani, C.; Turtu, S.; Brown, D.; Rout, C.

2004-06-01

For the protection of the LHC superconducting magnets, about 2100 specially developed by-pass diodes were manufactured by DYNEX SEMICONDUCTOR LTD (Lincoln, GB) and about 1300 of these diodes were mounted into diode stacks and submitted to tests at cryogenic temperatures. To date about 800 dipole diode stacks and about 250 quadrupole diode stacks for the protection of the superconducting lattice dipole and lattice quadrupole magnets have been assembled at OCEM (Bologna,Italy) and successfully tested in liquid helium at ENEA (Frascati, Italy). This report gives an overview of the test results obtained so far. After a short description of the test installations and test procedures, a statistical analysis is presented for test data during diode production as well as for the performance of the diode stacks during testing in liquid helium, including failure rates and degradation of the diodes.

Study of the spectral bandwidth of a double-pass acousto-optic system [Invited].

Science.gov (United States)

Champagne, Justine; Kastelik, Jean-Claude; Dupont, Samuel; Gazalet, Joseph

2018-04-01

Acousto-optic tunable filters are known as efficient instruments for spectral and spatial filtering of light. In this paper, we analyze the bandwidth dependence of a double-pass filter. The interaction geometry chosen allows the simultaneous diffraction of the ordinary and the extraordinary optical modes by a single ultrasonic frequency. We present the main parameters of a custom device (design, optical range, driving frequency) and experimental results concerning the angular deviation of the beams including the effect of optical birefringence. The spectral resolution and the side lobes' significance are discussed. Spectral bandwidth of such a system is analyzed.

Pulse propagation in a two-pass optical amplifier with arbitrary laser beams overlap

Directory of Open Access Journals (Sweden)

AH Farahbod

2011-09-01

Full Text Available An analytical model for two-pass optical amplifier with arbitrary beams overlap has been developed which generalized the classical theory of Frantz-Nodvik for single pass amplifier. The effect of counterpropagating beams on gain and output energy fluence included in the model. Moreover, the appropriate limiting relations for two special cases of weak input signal and saturation state of the amplifier gain have been derived. The results indicate that for complete beams overlap, the gain and output energy have the least values. The model predictions are consistent with experimental observations and exact analytical model for two-pass amplifier when beam propagation paths are coincided.

Broadband superluminescent diodes and semiconductor optical amplifiers for the spectral range 750 - 800 nm

International Nuclear Information System (INIS)

Il'chenko, S N; Kostin, Yu O; Kukushkin, I A; Ladugin, M A; Lapin, P I; Lobintsov, A A; Marmalyuk, Aleksandr A; Yakubovich, S D

2011-01-01

We have studied superluminescent diodes (SLDs) and semiconductor optical amplifiers (SOAs) based on an (Al x Ga 1-x )As/GaAs single quantum well structure with an Al content x ∼ 0.1 in a 10-nm-thick active layer. Depending on the length of the active channel, the single-mode fibre coupled cw output power of the SLDs is 1 to 30 mW at a spectral width of about 50 nm. The width of the optical gain band in the active channel exceeds 40 nm. Preliminary operating life tests have demonstrated that the devices are sufficiently reliable. (lasers)

Optical microcavities and enhanced electroluminescence from electroformed Al-Al{sub 2}O{sub 3}-Ag diodes

Energy Technology Data Exchange (ETDEWEB)

Hickmott, T. W. [Department of Physics, State University of New York at Albany, Albany, New York 12222 (United States)

2013-12-21

Electroluminescence (EL) and electron emission into vacuum (EM) occur when a non-destructive dielectric breakdown of Al-Al{sub 2}O{sub 3}-Ag diodes, electroforming, results in the development of a filamentary region in which current-voltage (I-V) characteristics exhibit voltage-controlled negative resistance. The temperature dependence of I-V curves, EM, and, particularly, EL of Al-Al{sub 2}O{sub 3}-Ag diodes with anodic Al{sub 2}O{sub 3} thicknesses between 12 nm and 30 nm, has been studied. Two filters, a long-pass (LP) filter with transmission of photons with energies less than 3.0 eV and a short-pass (SP) filter with photon transmission between 3.0 and 4.0 eV, have been used to characterize EL. The voltage threshold for EL with the LP filter, V{sub LP}, is ∼1.5 V. V{sub LP} is nearly independent of Al{sub 2}O{sub 3} thickness and of temperature and is 0.3–0.6 V less than the threshold voltage for EL for the SP filter, V{sub SP}. EL intensity is primarily between 1.8 and 3.0 eV when the bias voltage, V{sub S} ≲ 7 V. EL in the thinnest diodes is enhanced compared to EL in thicker diodes. For increasing V{sub S}, for diodes with the smallest Al{sub 2}O{sub 3} thicknesses, there is a maximum EL intensity, L{sub MX}, at a voltage, V{sub LMX}, followed by a decrease to a plateau. L{sub MX} and EL intensity at 4.0 V in the plateau region depend exponentially on Al{sub 2}O{sub 3} thickness. The ratio of L{sub MX} at 295 K for a diode with 12 nm of Al{sub 2}O{sub 3} to L{sub MX} for a diode with 25 nm of Al{sub 2}O{sub 3} is ∼140. The ratio of EL intensity with the LP filter to EL intensity with the SP filter, LP/SP, varies between ∼3 and ∼35; it depends on Al{sub 2}O{sub 3} thickness and V{sub S}. Enhanced EL is attributed to the increase of the spontaneous emission rate of a dipole in a non-resonant optical microcavity. EL photons interact with the Ag and Al films to create surface plasmon polaritons (SPPs) at the metal-Al{sub 2}O

Spectral Characteristic Based on Fabry—Pérot Laser Diode with Two-Stage Optical Feedback

International Nuclear Information System (INIS)

Wu Jian-Wei; Nakarmi Bikash

2013-01-01

An optical device, consisting of a multi-mode Fabry—Pérot laser diode (MMFP-LD) with two-stage optical feedback, is proposed and experimentally demonstrated. The results show that the single-mode output with side-mode suppression ratio (SMSR) of ∼21.7 dB is attained by using the first-stage feedback. By using the second-stage feedback, the SMSR of single-mode operation could be increased to ∼28.5 dB while injection feedback power of −29 dBm is introduced into the laser diode. In the case of up to −29 dBm feedback power, the outcome SMSR is rapidly decayed to a very low level so that an obvious multi-mode operation in the output spectrum could be achieved at the feedback power level of −15.5 dBm. Thus, a transition between single- and multi-mode operations could be flexibly controlled by adjusting the injected power in the second-stage feedback system. Additionally, in the case of injection locking, the outcome SMSR and output power at the locked wavelength are as high as ∼50 dB and ∼5.8 dBm, respectively

Ultrastructural evaluation of multiple pass low energy versus single pass high energy radio-frequency treatment.

Science.gov (United States)

Kist, David; Burns, A Jay; Sanner, Roth; Counters, Jeff; Zelickson, Brian

2006-02-01

The radio-frequency (RF) device is a system capable of volumetric heating of the mid to deep dermis and selective heating of the fibrous septa strands and fascia layer. Clinically, these effects promote dermal collagen production, and tightening of these deep subcutaneous structures. A new technique of using multiple low energy passes has been described which results in lower patient discomfort and fewer side effects. This technique has also been anecdotally described as giving more reproducible and reliable clinical results of tissue tightening and contouring. This study will compare ultrastructural changes in collagen between a single pass high energy versus up to five passes of a multiple pass lower energy treatment. Three subjects were consented and treated in the preauricular region with the RF device using single or multiple passes (three or five) in the same 1.5 cm(2) treatment area with a slight delay between passes to allow tissue cooling. Biopsies from each treatment region and a control biopsy were taken immediately, 24 hours or 6 months post treatment for electron microscopic examination of the 0-1 mm and 1-2 mm levels. Sections of tissue 1 mm x 1 mm x 80 nm were examined with an RCA EMU-4 Transmission Electron Microscope. Twenty sections from 6 blocks from each 1 mm depth were examined by 2 blinded observers. The morphology and degree of collagen change in relation to area examined was compared to the control tissue, and estimated using a quantitative scale. Ultrastructural examination of tissue showed that an increased amount of collagen fibril changes with increasing passes at energies of 97 J (three passes) and 122 J (five passes), respectively. The changes seen after five multiple passes were similar to those detected after much more painful single pass high-energy treatments. This ultrastructural study shows changes in collagen fibril morphology with an increased effect demonstrated at greater depths of the skin with multiple low-fluence passes

Developments in lead-salt diode lasers

International Nuclear Information System (INIS)

Partin, D.L.

1985-01-01

Lead-chalcogenide diode lasers are useful as mid-infrared sources (2-1/2 <λ<30 μm), but have generally operated CW below 100K. A new materials system, PbEuSeTe, has been used to fabricate diode lasers operating from 10K (at 6.5 μm wavelength) up to 174K CW (at 4.4 μm) and up to 280K pulsed (at 3.8 μm). These are large optical cavity single quantum well devices grown by molecular beam epitaxy. These are currently the highest diode laser operating temperatures ever achieved at these wavelengths to our knowledge. Single ended output powers as high as 1 mW single mode (5 mW multimode) have been attained from mesa stripe diodes. These characteristics make these devices attractive for long wavelength fiber optic sensor/communications systems. The performance limits of these devices are discussed

RESEARCH OF THERMO-OPTICAL INHOMOGENEITIES IN Yb-Er GLASS AT DIODE PUMPING

Directory of Open Access Journals (Sweden)

V. Khramov

2016-03-01

Full Text Available Subject of Research. Investigation method of thermo-optical distortions in solid-state lasers was developed and presented. The method can be easily used for research of small diameter (approximately 2 mm active elements. Method. The experimental method described in this paper is based on the registration of deviation of the energy center of the probe beam passing through the thermally stressed active element. Main Results. We have presented experimental results of the thermal lens optical power research in the active element made of Yb-Er glass pumped transversely by a laser diode in the following modes: without generating, free-running and Q-switching. We have submitted obtained dependences of the optical power on the pumping energy. The measurements have been performed for the two polarization components at two wavelengths (632.8 nm and 1550 nm showing the absence of explicit astigmatism of the thermal lens. Practical Relevance. Knowledge of the thermal regime of such lasers gives the possibility for more precise calculation of the resonator parameters in terms of the thermal lens occurrence.

Growth and characterization of air annealing Tb-doped YAG:Ce single crystal for white-light-emitting diode

International Nuclear Information System (INIS)

Gong, Maogao; Xiang, Weidong; Liang, Xiaojuan; Zhong, Jiasong; Chen, Daqin; Huang, Jun; Gu, Guorui; Yang, Cheng; Xiang, Run

2015-01-01

Highlights: • We report preparation of transparent Ce,Tb:YAG single crystal by Czochralski method. • The effect of annealing on Ce,Tb:YAG single crystal had been investigated. • The Ce,Tb:YAG single crystal after annealing exhibited better optical performance. • The Ce,Tb:YAG single crystal could be used as an ideal candidate for WLED. - Abstract: We report the preparation of transparent Ce and Tb co-doped Y 3 Al 5 O 12 single crystal by the Czochralski method. The characterization of the resulting single crystal was accomplished by using X-ray powder diffractometer, scanning electron microscopy and energy dispersive X-ray spectroscopy. Absorption peak of the single crystal at about 460 nm has been obtained from ultraviolet–visible absorption spectrometer and their intensity is changed with different annealing condition. Its optical properties also have been investigated using fluorescence spectrometer. What’s more, its photoelectric parameters were studied by LED fast spectrometer. The constructed single crystal based white-light-emitting diode exhibits a high luminous efficiency of 140.89 lm/W, and a correlated color temperature of 4176 K as well as a color rendering index of 56.7, which reveal the prominent feasibility of the present single crystal material in white-light-emitting diode application

Growth and characterization of air annealing Tb-doped YAG:Ce single crystal for white-light-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Gong, Maogao [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); Xiang, Weidong, E-mail: xiangweidong001@126.com [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); Liang, Xiaojuan [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China); Zhong, Jiasong; Chen, Daqin [College of Materials & Environmental Engineering, Hangzhou Dianzi University, Hangzhou 310018 (China); Huang, Jun; Gu, Guorui; Yang, Cheng; Xiang, Run [College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou 325035 (China)

2015-08-05

Highlights: • We report preparation of transparent Ce,Tb:YAG single crystal by Czochralski method. • The effect of annealing on Ce,Tb:YAG single crystal had been investigated. • The Ce,Tb:YAG single crystal after annealing exhibited better optical performance. • The Ce,Tb:YAG single crystal could be used as an ideal candidate for WLED. - Abstract: We report the preparation of transparent Ce and Tb co-doped Y{sub 3}Al{sub 5}O{sub 12} single crystal by the Czochralski method. The characterization of the resulting single crystal was accomplished by using X-ray powder diffractometer, scanning electron microscopy and energy dispersive X-ray spectroscopy. Absorption peak of the single crystal at about 460 nm has been obtained from ultraviolet–visible absorption spectrometer and their intensity is changed with different annealing condition. Its optical properties also have been investigated using fluorescence spectrometer. What’s more, its photoelectric parameters were studied by LED fast spectrometer. The constructed single crystal based white-light-emitting diode exhibits a high luminous efficiency of 140.89 lm/W, and a correlated color temperature of 4176 K as well as a color rendering index of 56.7, which reveal the prominent feasibility of the present single crystal material in white-light-emitting diode application.

Electrical and optical response of a laser diode to transient ionizing radiation

International Nuclear Information System (INIS)

Baggio, J.; Brisset, C.; Sommer, J.L.; D'hose, C.; Lalande, P.; Leray, J.L.; Musseau, O.

1996-01-01

The authors have studied transient irradiation effects on the optical and electrical responses of a laser diode. The influence of dose rate, ranging from 10 9 to 10 12 rad(Si)/s, has been investigated through a complete experimental study. Dose rate vulnerability of the laser diode has been observed. Electrical and optical transient responses are determined by the dose rate, the diode structure, and its operating point

QUANTITATIVE DETECTION OF ENVIRONMENTALLY IMPORTANT DYES USING DIODE LASER/FIBER-OPTIC RAMAN

Science.gov (United States)

A compact diode laser/fiber-optic Raman spectrometer is used for quantitative detection of environmentally important dyes. This system is based on diode laser excitation at 782 mm, fiber optic probe technology, an imaging spectrometer, and state-of-the-art scientific CCD camera. ...

Optical phase dynamics in mutually coupled diode laser systems exhibiting power synchronization

International Nuclear Information System (INIS)

Pal, Vishwa; Ghosh, R; Prasad, Awadhesh

2011-01-01

We probe the physical mechanism behind the known phenomenon of power synchronization of two diode lasers that are mutually coupled via their delayed optical fields. In a diode laser, the amplitude and the phase of the optical field are coupled by the so-called linewidth enhancement factor, α. In this work, we explore the role of optical phases of the electric fields in amplitude (and hence power) synchronization through α in such mutually delay-coupled diode laser systems. Our numerical results show that the synchronization of optical phases drives the powers of lasers to synchronized death regimes. We also find that as α varies for different diode lasers, the system goes through a sequence of in-phase amplitude-death states. Within the windows between successive amplitude-death regions, the cross-correlation between the field amplitudes exhibits a universal power-law behaviour with respect to α.

Optimizing detection filters for single-grain optical dating of quartz

International Nuclear Information System (INIS)

Ballarini, M.; Wallinga, J.; Duller, G.A.T.; Brouwer, J.C.; Bos, A.J.J.; Van Eijk, C.W.E.

2005-01-01

We investigate the use of different optical detection filters for single-grain optically stimulated luminescence (OSL) measurements of quartz samples with a Riso TL/OSL single-grain reader. We selected three filter combinations that considerably improve the light detection efficiency when compared with the 7.5 mm U340 filters that are routinely used. These are the UG1+BG4 filter combination, the 2 mm UG1 and the 2.5 mm U340 filters, which allow a greater transmission in the quartz emission band. This leads to two benefits: (1) more grains can be accepted for equivalent dose analysis, and (2) OSL responses on individual grains are determined with a greater precision. While these three alternative filter combinations perform equally well if compared to each other, we suggest the 2.5 mm thick Hoya U340 to be the filter of choice as it allows the use of blue-diode and IR-diode stimulation sources for bleaching purposes and feldspar detection

Fiber optic modification of a diode array spectrophotometer

International Nuclear Information System (INIS)

Van Hare, D.R.; Prather, W.S.

1986-01-01

Fiber optics were adapted to a Hewlett-Packard diode array spectrophotometer to permit the analysis of radioactive samples without risking contamination of the instrument. Instrument performance was not compromised by the fiber optics. The instrument is in routine use at the Savannah River Plant control laboratories

Dual-channel amplification in a single-mode diode laser for multi-isotope laser cooling

International Nuclear Information System (INIS)

Booth, James L.; Van Dongen, Janelle; Lebel, Paul; Klappauf, Bruce G.; Madison, Kirk W.

2007-01-01

The output from two grating-stabilized external-cavity diode lasers were injected into a single-mode diode laser. Operating at a wavelength of 780 nm, this laser produced ∼50 mW of power with two main frequency components of the same spectral characteristics of the seed lasers. The power ratio of the amplified components was freely adjustable due to gain saturation, and amplification was observed for frequency differences of the two seed lasers in the range from 73 MHz to 6.6 GHz. This system was used to realize a dual isotope magneto-optic trap (MOT) for rubidium ( 85 Rb and 87 Rb). The resulting position and cloud size of the dual isotope MOT was the same as that of the single species MOTs to within ±10 and ±20 μm, respectively. We also characterized the additional spectral components produced by four wave mixing (FWM) in the diode laser amplifier and utilized a particular FWM sideband to realize hyperfine pumping and subsequent laser trapping of 85 Rb in the absence of a 'repump' laser dedicated to hyperfine pumping

Memory effect in silicon time-gated single-photon avalanche diodes

International Nuclear Information System (INIS)

Dalla Mora, A.; Contini, D.; Di Sieno, L.; Tosi, A.; Boso, G.; Villa, F.; Pifferi, A.

2015-01-01

We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons

Memory effect in silicon time-gated single-photon avalanche diodes

Energy Technology Data Exchange (ETDEWEB)

Dalla Mora, A.; Contini, D., E-mail: davide.contini@polimi.it; Di Sieno, L. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Tosi, A.; Boso, G.; Villa, F. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Pifferi, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); CNR, Istituto di Fotonica e Nanotecnologie, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

2015-03-21

We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

All-optical OFDM demultiplexing by spectral magnification and optical band-pass filtering

DEFF Research Database (Denmark)

Palushani, Evarist; Mulvad, Hans Christian Hansen; Kong, Deming

2013-01-01

We propose spectral magnification of optical-OFDM super-channels using time-lenses, enabling reduced inter-carrier-interference in subcarrier detection by simple band-pass filtering. A demonstration on an emulated 100 Gbit/s DPSK optical-OFDM channel shows improved sensitivities after 4-times spe...

The Pierce-diode approximation to the single-emitter plasma diode

International Nuclear Information System (INIS)

Ender, A. Ya.; Kuhn, S.; Kuznetsov, V. I.

2006-01-01

The possibility of modeling fast processes in the collisionless single-emitter plasma diode (Knudsen diode with surface ionization, KDSI) by means of the Pierce-diode is studied. The KDSI is of practical importance in that it is an almost exact model of thermionic energy converters (TICs) in the collisionless regime and can also be used to model low-density Q-machines. At high temperatures, the Knudsen TIC comes close to the efficiency of the Carnot cycle and hence is the most promising converter of thermal to electric energy. TICs can be applied as component parts in high-temperature electronics. It is shown that normalizations must be chosen appropriately in order to compare the plasma characteristics of the two models: the KDSI and the Pierce-diode. A linear eigenmode theory of the KDSI is developed. For both nonlinear time-independent states and linear eigenmodes without electron reflection, excellent agreement is found between the analytical potential distributions for the Pierce-diode and the corresponding numerical ones for the KDSI. For the states with electron reflection, the agreement is satisfactory in a qualitative sense. A full classification of states of both diodes for the regimes with and without electron reflection is presented. The effect of the thermal spread in electron velocities on the potential distributions and the (ε,η) diagrams is analyzed. Generally speaking, the methodology developed is usefully applicable to a variety of systems in which the electrons have beam-like distributions

Silicon Waveguide with Lateral p-i-n Diode for Nonlinearity Compensation by On-Chip Optical Phase Conjugation

DEFF Research Database (Denmark)

Gajda, A.; Da Ros, Francesco; Porto da Silva, Edson

2018-01-01

A 1-dB Q-factor improvement through optical phase conjugation in a silicon waveguide with a lateral p-i-n diode enables BERsingle-polarization signal...

Diode-side-pumped 131 W, 1319 nm single-wavelength cw Nd:YAG laser.

Science.gov (United States)

Haiyong, Zhu; Ge, Zhang; Chenghui, Huang; Yong, Wei; Lingxiong, Huang; Jing, Chen; Weidong, Chen; Zhenqiang, Chen

2007-01-20

A diode-side-pumped high-power 1319 nm single-wavelength Nd:YAG continuous wave (cw) laser is described. Through reasonable coating design of the cavity mirrors, the 1064 nm strongest line as well as the 1338 nm one have been successfully suppressed. The laser output powers corresponding to four groups of different output couplers operating at 1319 nm single wavelength have been compared. The output coupler with the transmission T=5.3% has the highest output power, and a 131 W cw output power was achieved at the pumping power of 555 W. The optical-optical conversion efficiency is 23.6%, and the slope efficiency is 46%. The output power is higher than the total output power of the dual-wavelength laser operating at 1319 nm and 1338 nm in the experiment.

Elimination of residual amplitude modulation in tunable diode laser wavelength modulation spectroscopy using an optical fiber delay line.

Science.gov (United States)

Chakraborty, Arup Lal; Ruxton, Keith; Johnstone, Walter; Lengden, Michael; Duffin, Kevin

2009-06-08

A new fiber-optic technique to eliminate residual amplitude modulation in tunable diode laser wavelength modulation spectroscopy is presented. The modulated laser output is split to pass in parallel through the gas measurement cell and an optical fiber delay line, with the modulation frequency / delay chosen to introduce a relative phase shift of pi between them. The two signals are balanced using a variable attenuator and recombined through a fiber coupler. In the absence of gas, the direct laser intensity modulation cancels, thereby eliminating the high background. The presence of gas induces a concentration-dependent imbalance at the coupler's output from which the absolute absorption profile is directly recovered with high accuracy using 1f detection.

Single beam pass migmacell method and apparatus

International Nuclear Information System (INIS)

Maglich, B.C.; Nering, J.E.; Mazarakis, M.G.; Miller, R.A.

1976-01-01

The invention provides improvements in migmacell apparatus and method by dispensing with the need for metastable confinement of injected molecular ions for multiple precession periods. Injected molecular ions undergo a 'single pass' through the reaction volume. By preconditioning the injected beam such that it contains a population distribution of molecules in higher vibrational states than in the case of a normal distribution, injected molecules in the single pass exper-ience collisionless dissociation in the migmacell under magnetic influence, i.e., so-called Lorentz dissociation. Dissociationions then form atomic migma

Distributed-feedback single heterojunction GaAs diode laser

International Nuclear Information System (INIS)

Scifres, D.R.; Burnham, R.D.; Streifer, W.

1974-01-01

Laser operation of single-heterojunction GaAl As/GaAs diode lasers using a periodic structure within the gain medium of the device, thereby obviating the need for carefully cleaved end crystal faces to produce feedback, is reported. By varying the grating period, wavelengths from 8430 to 8560 A were observed. The threshold current densities were of the same order as for normal single heterojunction diode lasers. Some advantages in output wavelengths were observed over lasers with cleared faces. (U.S.)

Angle sensitive single photon avalanche diode

Energy Technology Data Exchange (ETDEWEB)

Lee, Changhyuk, E-mail: cl678@cornell.edu; Johnson, Ben, E-mail: bcj25@cornell.edu; Molnar, Alyosha, E-mail: am699@cornell.edu [Electrical and Computer Engineering, Cornell University, Ithaca, New York 14850 (United States)

2015-06-08

An ideal light sensor would provide exact information on intensity, timing, location, and angle of incoming photons. Single photon avalanche diodes (SPADs) provide such desired high (single photon) sensitivity with precise time information and can be implemented at a pixel-scale to form an array to extract spatial information. Furthermore, recent work has demonstrated photodiode-based structures (combined with micro-lenses or diffraction gratings) that are capable of encoding both spatial and angular information of incident light. In this letter, we describe the implementation of such a grating structure on SPADs to realize a pixel-scale angle-sensitive single photon avalanche diode (A-SPAD) built in a standard CMOS process. While the underlying SPAD structure provides high sensitivity, the time information of the two layers of diffraction gratings above offers angle-sensitivity. Such a unique combination of SPAD and diffraction gratings expands the sensing dimensions to pave a path towards lens-less 3-D imaging and light-field time-of-flight imaging.

Cryogenic testing of by-pass diode stacks for the superconducting magnets of the large hadron collider at CERN

International Nuclear Information System (INIS)

Della Corte, A.; Catitti, A.; Chiarelli, S.; Di Ferdinando, E.; Verdini, L.; Gharib, A.; Hagedorn, D.; Turtu, S.; Basile, G. L.; Taddia, G.; Talli, M.; Viola, R.

2002-01-01

A dedicated facility prepared by ENEA (Italian Agency for Energy and Environment) for the cryogenic testing of by-pass diodes for the protection of the CERN Large Hadron Collider main magnets will be described. This experimental activity is in the frame of a contract awarded to OCEM, an Italian firm active in the field of electronic devices and power supplies, in collaboration with ENEA, for the manufacture and testing of all the diode stacks. In particular, CERN requests the measurement of the reverse and forward voltage diode characteristics at 300 K and 77 K, and endurance test cycles at liquid helium temperature. The experimental set-up at ENEA and data acquisition system developed for the scope will be described and the test results reported

3.1 W narrowband blue external cavity diode laser

Science.gov (United States)

Peng, Jue; Ren, Huaijin; Zhou, Kun; Li, Yi; Du, Weichuan; Gao, Songxin; Li, Ruijun; Liu, Jianping; Li, Deyao; Yang, Hui

2018-03-01

We reported a high-power narrowband blue diode laser which is suitable for subsequent nonlinear frequency conversion into the deep ultraviolet (DUV) spectral range. The laser is based on an external cavity diode laser (ECDL) system using a commercially available GaN-based high-power blue laser diode emitting at 448 nm. Longitudinal mode selection is realized by using a surface diffraction grating in Littrow configuration. The diffraction efficiency of the grating was optimized by controlling the polarization state of the laser beam incident on the grating. A maximum optical output power of 3.1 W in continuous-wave operation with a spectral width of 60 pm and a side-mode suppression ratio (SMSR) larger than 10 dB at 448.4 nm is achieved. Based on the experimental spectra and output powers, the theoretical efficiency and output power of the subsequent nonlinear frequency conversion were calculated according to the Boyd- Kleinman theory. The single-pass conversion efficiency and output power is expected to be 1.9×10-4 and 0.57 mW, respectively, at the 3.1 W output power of the ECDL. The high-power narrowband blue diode laser is very promising as pump source in the subsequent nonlinear frequency conversion.

Iodine-stabilized single-frequency green InGaN diode laser.

Science.gov (United States)

Chen, Yi-Hsi; Lin, Wei-Chen; Shy, Jow-Tsong; Chui, Hsiang-Chen

2018-01-01

A 520-nm InGaN diode laser can emit a milliwatt-level, single-frequency laser beam when the applied current slightly exceeds the lasing threshold. The laser frequency was less sensitive to diode temperature and could be finely tuned by adjusting the applied current. Laser frequency was stabilized onto a hyperfine component in an iodine transition through the saturated absorption spectroscopy. The uncertainty of frequency stabilization was approximately 8×10 -9 at a 10-s integration time. This compact laser system can replace the conventional green diode-pumped solid-state laser and applied as a frequency reference. A single longitudinal mode operational region with diode temperature, current, and output power was investigated.

Photonic synthesis of continuous‐wave millimeter‐wave signals using a passively mode‐locked laser diode and selective optical filtering

DEFF Research Database (Denmark)

Acedo, P.; Carpintero, G.; Criado, A.R.

2012-01-01

We report a photonic synthesis scheme for continuous wave millimeter‐wave signal generation using a single passively mode‐locked laser diode (PMLLD), optical filtering and photomixing in a fast photodiode.The phase noise of the photonically synthesized signals is evaluated and inherits...

Observation of phase noise reduction in photonically synthesized sub-THz signals using a passively mode-locked laser diode and highly selective optical filtering

DEFF Research Database (Denmark)

Criado, A. R.; Acedo, P.; Carpintero, G.

2012-01-01

A Continuous Wave (CW) sub-THz photonic synthesis setup based on a single Passively Mode-Locked Laser Diode (PMLLD) acting as a monolithic Optical Frequency Comb Generator (OFCG) and highly selective optical filtering has been implemented to evaluate the phase noise performance of the generated sub...

Site-controlled InGaN/GaN single-photon-emitting diode

Energy Technology Data Exchange (ETDEWEB)

Zhang, Lei; Deng, Hui, E-mail: dengh@umich.edu [Department of Physics, University of Michigan, 450 Church St., Ann Arbor, Michigan 48109 (United States); Teng, Chu-Hsiang; Ku, Pei-Cheng, E-mail: peicheng@umich.edu [Department of Electrical Engineering and Computer Science, University of Michigan, 1301 Beal Ave., Ann Arbor, Michigan 48109 (United States)

2016-04-11

We report single-photon emission from electrically driven site-controlled InGaN/GaN quantum dots. The device is fabricated from a planar light-emitting diode structure containing a single InGaN quantum well, using a top-down approach. The location, dimension, and height of each single-photon-emitting diode are controlled lithographically, providing great flexibility for chip-scale integration.

110 GHz rapid, continous tuning from an optical parametric oscillator pumped by a fiber-amplified DBR diode laser

NARCIS (Netherlands)

Lindsay, I.D.; Adhimoolam, B.; Gross, P.; Klein, M.E.; Boller, Klaus J.

2005-01-01

A singly-resonant continuous-wave optical parametric oscillator (cw-OPO) pumped by a fiber-amplified diode laser is described. Tuning of the pump source allowed the OPO output to be tuned continuously, without mode-hops, over 110 GHz in 29 ms. Discontinuous pump tuning over 20 nm in the region of

Optical bistability in erbium-doped yttrium aluminum garnet crystal combined with a laser diode.

Science.gov (United States)

Maeda, Y

1994-01-10

Optical bistability was observed in a simple structure of an injection laser diode combined with an erbium-doped yttrium aluminum garnet crystal. Since a hysteresis characteristic exists in the relationship between the wavelength and the injection current of a laser diode, an optical memory function capable of holding the output status is confirmed. In addition, an optical signal inversion was caused by the decrease of transmission of the erbium-doped yttrium aluminum garnet crystal against the red shift (principally mode hopping) of the laser diode. It is suggested that the switching time of this phenomenon is the time necessary for a mode hopping by current injection.

Ultra-high optical responsivity of semiconducting asymmetric nano-channel diodes for photon detection

Science.gov (United States)

Akbas, Y.; Plecenik, T.; Durina, P.; Plecenik, A.; Jukna, A.; Wicks, G.; Sobolewski, Roman

2017-05-01

The asymmetric nano-channel diode (ANCD) is the 2-dimensional electron gas (2DEG) semiconductor nanodevice that, unlike a conventional diode, relies on the device nanostructure and field-controlled transport in a ballistic nanometerwidth channel instead of barriers to develop its asymmetric, diode-like current-voltage (I-V) characteristics. We focus on ANCD optoelectronic properties, and demonstrate that the devices can act as very sensitive, single-photon-level, visiblelight photodetectors. Our test structures consist of 2-μm-long and 230-nm-wide channels and were fabricated using electron-beam lithography on a GaAs/AlGaAs heterostructure with a 2DEG layer, followed by reactive ion etching. The I-V curves were collected by measuring the transport current under the voltage-source biasing condition, both in the dark and under light illumination. The experiments were conducted inside a cryostat, in a temperature range from 300 K to 78 K. As an optical excitation, we used a 800-nm-wavelength, generated by a commercial Ti:sapphire laser operated either at a quasi-continuous-wave mode or as a source of 100-fs-wide pulses. The impact of the light illumination was very clear, and at low temperatures we observed a significant photocurrent Iph 0.25 μA at temperature 78 K for the incident optical power as low as 1 nW, with a limited dark-current background. The magnitude of the device optical responsivity increased linearly with the decrease of the optical power, reaching for 1-nW optical excitation the value as high as 400 A/W at room temperature and >800 A/W at 78K. The physics of the photoresponse gain mechanism in the ANCD arises from a vast disparity between the sub-picosecond transit time of photo-excited electrons travelling in the 2DEG nanochannel and the up to microsecond lifetime of photo-excited holes pushed towards the device substrate.

Remote optically-tunable transimpedance amplifiers for quantum well diodes

Energy Technology Data Exchange (ETDEWEB)

Carraresi, L.; Landi, G.; Rocchi, S.; Vignoli, V

1999-08-01

In a previous paper we discussed the advantages in using linear optical transmission systems based on quantum well diodes in modern high energy physics experiments. In this paper, after a short summary of the quantum well theory, the electronics section of the above optical transmission system is presented. In particular the basic configuration of a transimpedance amplifier and the arrangement of an optical remote control system for the amplifier gain and bandwidth tuning are discussed.

Remote optically-tunable transimpedance amplifiers for quantum well diodes

International Nuclear Information System (INIS)

Carraresi, L.; Landi, G.; Rocchi, S.; Vignoli, V.

1999-01-01

In a previous paper we discussed the advantages in using linear optical transmission systems based on quantum well diodes in modern high energy physics experiments. In this paper, after a short summary of the quantum well theory, the electronics section of the above optical transmission system is presented. In particular the basic configuration of a transimpedance amplifier and the arrangement of an optical remote control system for the amplifier gain and bandwidth tuning are discussed

Route to broadband chaos in a chaotic laser diode subject to optical injection.

Science.gov (United States)

Wang, An-Bang; Wang, Yun-Cai; Wang, Juan-Fen

2009-04-15

We experimentally and numerically demonstrate a route to bandwidth-enhanced chaos that is induced by an additional optical injection for a chaotic laser diode with optical feedback. The measured and calculated optical spectra consistently reveal that the mechanism of bandwidth enhancement is the interaction between the injection and chaotic laser field via beating. The bandwidth can be maximized only when the injected light is detuned into the edge of the optical spectrum of the chaotic laser field and the beating frequency exceeds the original bandwidth. The simulated dynamics maps indicate that 20 GHz broadband chaos can be obtained by commonly used laser diodes.

Communication with diode laser: short distance line of sight communication using fiber optics

International Nuclear Information System (INIS)

Mirza, A.H.

1999-01-01

The objective of this project is to carry audio signal from transmitting station to a short distance receiving station along line of sight and also communication through fiber optics is performed, using diode laser light as carrier. In this project optical communication system, modulation techniques, basics of laser and causes of using diode laser are discussed briefly. Transmitter circuit and receiver circuit are fully described. Communication was performed using pulse width modulation technique. Optical fiber communication have many advantages over other type of conventional communication techniques. This report contains the description of optical fiber communication and compared with other communication systems. (author)

Optical neuron by use of a laser diode with injection seeding and external optical feedback

NARCIS (Netherlands)

Mos, E.C.; Hoppenbrouwers, J.J.L.; Hill, M.T.; Blum, M.W.; Schleipen, J.J.H.B.; Waardt, de H.

2000-01-01

We present an all-optical neuron by use of a multimode laser diode that is subjected to external optical feedback and light injection. The shape of the threshold function, that is needed for neural operation, is controlled by adjusting the external feedback level for two longitudinal cavity modes of

Characteristic of laser diode beam propagation through a collimating lens.

Science.gov (United States)

Xu, Qiang; Han, Yiping; Cui, Zhiwei

2010-01-20

A mathematical model of a laser diode beam propagating through a collimating lens is presented. Wave propagation beyond the paraxial approximation is studied. The phase delay of the laser diode wave in passing through the lens is analyzed in detail. The propagation optical field after the lens is obtained from the diffraction integral by the stationary phase method. The model is employed to predict the light intensity at various beam cross sections, and the computed intensity distributions are in a good agreement with the corresponding measurements.

THE DETERMINATION OF A CRITICAL VALUE FOR DYNAMIC STABILITY OF SEMICONDUCTOR LASER DIODE WITH EXTERNAL OPTICAL FEEDBACK

Directory of Open Access Journals (Sweden)

Remzi YILDIRIM

1998-01-01

Full Text Available In this study, dynamic stability analysis of semiconductor laser diodes with external optical feedback has been realized. In the analysis the frequency response of the transfer function of laser diode H jw( , the transfer m function of laser diode with external optical feedback TF jw( , and optical feedback transfer function m K jw( obtained from small signal equations has been m accomplished using Nyquist stability analysis in complex domain. The effect of optical feedback on the stability of the system has been introduced and to bring the laser diode to stable condition the working critical boundary range of dampig frequency and reflection power constant (R has been determined. In the study the reflection power has been taken as ( .

5-nJ Femtosecond Ti3+:sapphire laser pumped with a single 1 W green diode

Science.gov (United States)

Muti, Abdullah; Kocabas, Askin; Sennaroglu, Alphan

2018-05-01

We report a Kerr-lens mode-locked, extended-cavity femtosecond Ti3+:sapphire laser directly pumped at 520 nm with a 1 W AlInGaN green diode. To obtain energy scaling, the short x-cavity was extended with a q-preserving multi-pass cavity to reduce the pulse repetition rate to 5.78 MHz. With 880 mW of incident pump power, we obtained as high as 90 mW of continuous-wave output power from the short cavity by using a 3% output coupler. In the Kerr-lens mode-locked regime, the extended cavity produced nearly transform-limited 95 fs pulses at 776 nm. The resulting energy and peak power of the pulses were 5.1 nJ and 53 kW, respectively. To our knowledge, this represents the highest pulse energy directly obtained to date from a mode-locked, single-diode-pumped Ti3+:sapphire laser.

A practical guide to handling laser diode beams

CERN Document Server

Sun, Haiyin

2015-01-01

This book offers the reader a practical guide to the control and characterization of laser diode beams.  Laser diodes are the most widely used lasers, accounting for 50% of the global laser market.  Correct handling of laser diode beams is the key to the successful use of laser diodes, and this requires an in-depth understanding of their unique properties. Following a short introduction to the working principles of laser diodes, the book describes the basics of laser diode beams and beam propagation, including Zemax modeling of a Gaussian beam propagating through a lens.  The core of the book is concerned with laser diode beam manipulations: collimating and focusing, circularization and astigmatism correction, coupling into a single mode optical fiber, diffractive optics and beam shaping, and manipulation of multi transverse mode beams.  The final chapter of the book covers beam characterization methods, describing the measurement of spatial and spectral properties, including wavelength and linewidth meas...

Increasing the collection efficiency of time-correlated single-photon counting with single-photon avalanche diodes using immersion lenses.

Science.gov (United States)

Pichette, Charles; Giudice, Andrea; Thibault, Simon; Bérubé-Lauzière, Yves

2016-11-20

Single-photon avalanche diodes (SPADs) achieving high timing resolution (≈20-50  ps) developed for time-correlated single-photon counting (TCSPC) generally have very small photosensitive areas (25-100 μm in diameter). This limits the achievable photon counting rate and signal-to-noise ratio and may lead to long counting times. This is detrimental in applications requiring several measurements, such as fluorescence lifetime imaging (FLIM) microscopy, which requires scanning, and time-domain diffuse optical tomography (TD-DOT). We show in this work that the use of an immersion lens directly affixed onto the photosensitive area of the SPAD helps alleviate this problem by allowing more light to be concentrated onto the detector. Following careful optical design and simulations, our experimental results show that it is actually possible to achieve the predicted theoretical increase in the photon counting rate (we achieve a factor of ≈4 here). This work is of high relevance in high timing resolution TCSPC with small photosensitive area detectors and should find widespread interest in FLIM and TD-DOT with SPADs.

High-Performance Single Nanowire Tunnel Diodes

DEFF Research Database (Denmark)

Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

2010-01-01

We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27...

Memory effect in gated single-photon avalanche diodes: a limiting noise contribution similar to afterpulsing

Science.gov (United States)

Contini, D.; Dalla Mora, A.; Di Sieno, L.; Cubeddu, R.; Tosi, A.; Boso, G.; Pifferi, A.

2013-03-01

In recent years, emerging applications, such as diffuse optical imaging and spectroscopy (e.g., functional brain imaging and optical mammography), in which a wide dynamic range is crucial, have turned the interest towards Single-Photon Avalanche Diode (SPAD). In these fields, the use of a fast-gated SPAD has proven to be a successful technique to increase the measurement sensitivity of different orders of magnitude. However, an unknown background noise has been observed at high illumination during the gate-OFF time, thus setting a limit to the maximum increase of the dynamic range. In this paper we describe this noise in thin-junction silicon single-photon avalanche diode when a large amount of photons reaches the gated detector during the OFF time preceding the enabling time. This memory effect increases the background noise with respect to primary dark count rate similarly to a classical afterpulsing process, but differently it is not related to a previous avalanche ignition in the detector. We discovered that memory effect increases linearly with the power of light impinging on the detector and it has an exponential trend with time constants far different from those of afterpulsing and independently of the bias voltage applied to the junction. For these reasons, the memory effect is not due to the same trapping states of afterpulsing and must be described as a different process.

Gamma-ray vulnerability of light-emitting diodes injection-laser diodes and pin-photodiodes for 1.3 μm wavelength-fiber optics

International Nuclear Information System (INIS)

Breuze, G.; Serre, J.

1992-01-01

With the increasing use of optical data links, it becomes essential to test for radiation vulnerability not only the transmission support - fiber and cable - but also fiber-end electro-optical components that could be exposed to hostile environment. Presently there is a significant number of radiation tests of optical fibers [1,2,3[. Here are only given a few results obtained on gradient index multimode fibers with and without phosphor. These data provide an important contribution to the improvement of all standard electro-optical pigtailed components working on the 1.3 μm wavelength: light-emitting diodes (LED), injection-laser diode modules (LDM) and pin-photodiodes (PD). Multicomponent LDM behaviour under CO 60 exposure was extensively tested. Hardened optical data links allow now to ensure medium data transmission rates on appreciable fiber - lengths despite medium steady - state gamma-ray exposure

Optical signal inverter of erbium-doped yttrium aluminum garnet with red shift of laser diodes.

Science.gov (United States)

Maeda, Y

1994-08-10

An optical signal inverter was demonstrated in a simple structure that combined a laser diode with Er-doped YAG crystal. The optical signal inversion occurred at a response time of 7 ns and was caused by the decrease of transmission of Er:YAG against the red shift of the wavelength of the laser diode.

Practical UAV Optical Sensor Bench with Minimal Adjustability

Science.gov (United States)

Pilgrim, Jeffrey; Gonzales, Paula

2013-01-01

A multiple-pass optical platform eliminates essentially all optical alignment degrees of freedom, save one. A four-pass absorption spectrometer architecture is made rigid by firmly mounting dielectric-coated mirror prisms with no alignment capability to the platform. The laser diode beam is collimated by a small, custom-developed lens, which has only a rotational degree of freedom along the standard optical "z" axis. This degree is itself eliminated by adhesive after laser collimation. Only one degree of freedom is preserved by allowing the laser diode chip and mount subassembly to move relative to the collimating lens by using over-sized mounting holes. This allows full 360 deg motion of a few millimeters relative to the lens, which, due to the high numerical aperture of the lens, provides wide directional steering of the collimated laser beam.

Invariable optical properties of phosphor-free white light-emitting diode under electrical stress

International Nuclear Information System (INIS)

Hao, Long; Hao, Fang; Sheng-Li, Qi; Li-Wen, Sang; Wen-Yu, Cao; Jian, Yan; Jun-Jing, Deng; Zhi-Jian, Yang; Guo-Yi, Zhang

2010-01-01

This paper reports that a dual-wavelength white light-emitting diode is fabricated by using a metal-organic chemical vapor deposition method. Through a 200-hours' current stress, the reverse leakage current of this light-emitting diode increases with the aging time, but the optical properties remained unchanged despite the enhanced reverse leakage current. Transmission electron microscopy and cathodeluminescence images show that indium atoms were assembled in and around V-shape pits with various compositions, which can be ascribed to the emitted white light. Evolution of cathodeluminescence intensities under electron irradiation is also performed. Combining cathodeluminescence intensities under electron irradiation and above results, the increase of leakage channels and crystalline quality degradation are realized. Although leakage channels increase with aging, potential fluctuation caused by indium aggregation can effectively avoid the impact of leakage channels. Indium aggregation can be attributed to the mechanism of preventing optical degradation in phosphor-free white light-emitting diode. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Fuel-element failures in Hanford single-pass reactors 1944--1971

Energy Technology Data Exchange (ETDEWEB)

Gydesen, S.P.

1993-07-01

The primary objective of the Hanford Environmental Dose Reconstruction (HEDR) Project is to estimate the radiation dose that individuals could have received as a result of emissions since 1944 from the US Department of Energy`s (DOE) Hanford Site near Richland, Washington. To estimate the doses, the staff of the Source Terms Task use operating information from historical documents to approximate the radioactive emissions. One source of radioactive emissions to the Columbia River came from leaks in the aluminum cladding of the uranium metal fuel elements in single-pass reactors. The purpose of this letter report is to provide photocopies of the documents that recorded these failures. The data from these documents will be used by the Source Terms Task to determine the contribution of single-pass reactor fuel-element failures to the radioactivity of the reactor effluent from 1944 through 1971. Each referenced fuel-element failure occurring in the Hanford single-pass reactors is addressed. The first recorded failure was in 1948, the last in 1970. No records of fuel-element failures were found in documents prior to 1948. Data on the approximately 2000 failures which occurred during the 28 years (1944--1971) of Hanford single-pass reactor operations are provided in this report.

Cavity-Enhanced Raman Spectroscopy of Natural Gas with Optical Feedback cw-Diode Lasers.

Science.gov (United States)

Hippler, Michael

2015-08-04

We report on improvements made on our previously introduced technique of cavity-enhanced Raman spectroscopy (CERS) with optical feedback cw-diode lasers in the gas phase, including a new mode-matching procedure which keeps the laser in resonance with the optical cavity without inducing long-term frequency shifts of the laser, and using a new CCD camera with improved noise performance. With 10 mW of 636.2 nm diode laser excitation and 30 s integration time, cavity enhancement achieves noise-equivalent detection limits below 1 mbar at 1 bar total pressure, depending on Raman cross sections. Detection limits can be easily improved using higher power diodes. We further demonstrate a relevant analytical application of CERS, the multicomponent analysis of natural gas samples. Several spectroscopic features have been identified and characterized. CERS with low power diode lasers is suitable for online monitoring of natural gas mixtures with sensitivity and spectroscopic selectivity, including monitoring H2, H2S, N2, CO2, and alkanes.

Multi-pass spectroscopic ellipsometry

International Nuclear Information System (INIS)

Stehle, Jean-Louis; Samartzis, Peter C.; Stamataki, Katerina; Piel, Jean-Philippe; Katsoprinakis, George E.; Papadakis, Vassilis; Schimowski, Xavier; Rakitzis, T. Peter; Loppinet, Benoit

2014-01-01

Spectroscopic ellipsometry is an established technique, particularly useful for thickness measurements of thin films. It measures polarization rotation after a single reflection of a beam of light on the measured substrate at a given incidence angle. In this paper, we report the development of multi-pass spectroscopic ellipsometry where the light beam reflects multiple times on the sample. We have investigated both theoretically and experimentally the effect of sample reflectivity, number of reflections (passes), angles of incidence and detector dynamic range on ellipsometric observables tanΨ and cosΔ. The multiple pass approach provides increased sensitivity to small changes in Ψ and Δ, opening the way for single measurement determination of optical thickness T, refractive index n and absorption coefficient k of thin films, a significant improvement over the existing techniques. Based on our results, we discuss the strengths, the weaknesses and possible applications of this technique. - Highlights: • We present multi-pass spectroscopic ellipsometry (MPSE), a multi-pass approach to ellipsometry. • Different detectors, samples, angles of incidence and number of passes were tested. • N passes improve polarization ratio sensitivity to the power of N. • N reflections improve phase shift sensitivity by a factor of N. • MPSE can significantly improve thickness measurements in thin films

Efficient and bright organic light-emitting diodes on single-layer graphene electrodes

Science.gov (United States)

Li, Ning; Oida, Satoshi; Tulevski, George S.; Han, Shu-Jen; Hannon, James B.; Sadana, Devendra K.; Chen, Tze-Chiang

2013-08-01

Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode used in the current organic light-emitting diode technologies increases the overall cost and has limited bendability for future flexible applications. Here we use single-layer graphene as an alternative flexible transparent conductor, yielding white organic light-emitting diodes with brightness and efficiency sufficient for general lighting. The performance improvement is attributed to the device structure, which allows direct hole injection from the single-layer graphene anode into the light-emitting layers, reducing carrier trapping induced efficiency roll-off. By employing a light out-coupling structure, phosphorescent green organic light-emitting diodes exhibit external quantum efficiency >60%, while phosphorescent white organic light-emitting diodes exhibit external quantum efficiency >45% at 10,000 cd m-2 with colour rendering index of 85. The power efficiency of white organic light-emitting diodes reaches 80 lm W-1 at 3,000 cd m-2, comparable to the most efficient lighting technologies.

Online analysis by a fiber-optic diode array spectrophotometer

International Nuclear Information System (INIS)

Van Hare, D.R.; Prather, W.S.; O'Rourke, P.E.

1987-01-01

An online photometric analyzer has been developed which can make remote measurements over the 350 to 900 nm region at distances of up to 100 feet. The analyzer consists of a commercially available diode array spectrophotometer interfaced to a fiber-optic multiplexer to allow online monitoring of up to ten locations sequentially. The development of the fiber-optic interface is discussed and data from several online applications are presented to demonstrate the capabilities of the measurement system

White-light-emitting diode based on a single-layer polymer

Science.gov (United States)

Wang, B. Z.; Zhang, X. P.; Liu, H. M.

2013-05-01

A broad-band light-emitting diode was achieved in a single-layer device based on pure poly(9,9'-dioctylfluorene-co-bis-N,N'-(4-butylphenyl)-bis-N,N'-phenyl-1,4-phenylenediamine) (PFB). Electromer emission was observed in the red with a center wavelength of about 620 nm in electroluminescence (EL) spectrum. This kind of emission exhibits strong dependence on the thickness of the PFB layer, so that the shape of the EL spectrum may be adjusted through changing the thickness of the active polymer layer to balance between the intrinsic PFB emission in the blue and the electromer emission in the red. Thus, white light emission may be achieved from such a single-layer single-material diode.

Generation of coherent soft x-rays using a single-pass free-electron laser amplifier

International Nuclear Information System (INIS)

Wang, T.F.; Goldstein, J.C.; Newnam, B.E.; McVey, B.D.

1988-01-01

We consider a single-pass free-electron laser (FEL) amplifier, driven by an rf-linac followed by a damping ring for reduced emittance, for use in generating coherent light in the soft x-ray region. The dependence of the optical gain on electron-beam quality, studied with the three-dimensional FEL simulation code FELEX, is given and related to the expected power of self-amplified spontaneous emission. We discuss issues for the damping ring designed to achieve the required electron beam quality. The idea of a multipass regenerative amplifier is also presented

Bistable optical devices with laser diodes coupled to absorbers of narrow spectral bandwidth.

Science.gov (United States)

Maeda, Y

1994-06-20

An optical signal inverter was demonstrated with a combination of the following two effects: One is the decrease of the transmission of an Er-doped YAG crystal with increasing red shift of a laser diode resulting from an increase in the injection current, and the other is a negative nonlinear absorption in which the transmission decreases inversely with increasing laser intensity. Because a hysteresis characteristic exists in the relationship between the wavelength and the injection current of the laser diode, an optical bistability was observed in this system.

The impact of external optical feedback on the degradation behavior of high-power diode lasers

DEFF Research Database (Denmark)

Hempel, Martin; Chi, Mingjun; Petersen, Paul Michael

2013-01-01

The impact of external feedback on high-power diode laser degradation is studied. For this purpose early stages of gradual degradation are prepared by accelerated aging of 808-nm-emitting AlGaAs-based devices. While the quantum well that actually experiences the highest total optical load remains...... unaffected, severe impact is observed to the cladding layers and the waveguide. Consequently hardening of diode lasers for operation under external optical feedback must necessarily involve claddings and waveguide, into which the quantum well is embedded.......The impact of external feedback on high-power diode laser degradation is studied. For this purpose early stages of gradual degradation are prepared by accelerated aging of 808-nm-emitting AlGaAs-based devices. While the quantum well that actually experiences the highest total optical load remains...

High brightness diode lasers controlled by volume Bragg gratings

Science.gov (United States)

Glebov, Leonid

2017-02-01

Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application

International Nuclear Information System (INIS)

Özaydın, C.; Güllü, Ö.; Pakma, O.; Ilhan, S.; Akkılıç, K.

2016-01-01

Highlights: • Optical properties and thickness of the A novel organometallic complex (OMC) film were investigated by spectroscopic ellipsometry (SE). • Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated • This paper presents the I–V analysis of Au/OMC/n-Si MIS diode. • Current–voltage and photovoltaic properties of the diode were investigated. - Abstract: In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current–voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φ_b) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.

The optical characterization of organometallic complex thin films by spectroscopic ellipsometry and photovoltaic diode application

Energy Technology Data Exchange (ETDEWEB)

Özaydın, C. [Batman University, Engineering Faculty, Department of Computer Eng., Batman (Turkey); Güllü, Ö., E-mail: omergullu@gmail.com [Batman University, Science and Art Faculty, Department of Physics, Batman (Turkey); Pakma, O. [Batman University, Science and Art Faculty, Department of Physics, Batman (Turkey); Ilhan, S. [Siirt University, Science and Art Faculty, Department of Chemistry, Siirt (Turkey); Akkılıç, K. [Dicle University, Education Faculty, Department of Physics Education, Diyarbakır (Turkey)

2016-05-15

Highlights: • Optical properties and thickness of the A novel organometallic complex (OMC) film were investigated by spectroscopic ellipsometry (SE). • Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated • This paper presents the I–V analysis of Au/OMC/n-Si MIS diode. • Current–voltage and photovoltaic properties of the diode were investigated. - Abstract: In this work, organometallic complex (OMC) films have been deposited onto glass or silicon substrates by spin coating technique and their photovoltaic application potential has been investigated. Optical properties and thickness of the film have been investigated by spectroscopic ellipsometry (SE). Also, transmittance spectrum has been taken by UV/vis spectrophotometer. The optical method has been used to determine the band gap value of the films. Also, Au/OMC/n-Si metal/interlayer/semiconductor (MIS) diode has been fabricated. Current–voltage and photovoltaic properties of the structure were investigated. The ideality factor (n) and barrier height (Φ{sub b}) values of the diode were found to be 2.89 and 0.79 eV, respectively. The device shows photovoltaic behavior with a maximum open-circuit voltage of 396 mV and a short circuit current of 33.8 μA under 300 W light.

Quaternary InGaAsSb Thermophotovoltaic Diode Technology

International Nuclear Information System (INIS)

M Dashiell; J Beausang; H Ehsani; G Nichols; D DePoy; L Danielson; P Talamo; K Rahner; E Brown; S Burger; P Fourspring; W Topper; P Baldasaro; C Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; Jizhong Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryl

2005-01-01

Thermophotovoltaic (TPV) diodes fabricated from InGaAsSb alloys lattice-matched to GaSb substrates are grown by Metal Organic Vapor Phase Epitaxy (MOVPE). 0.53eV InGaAsSb TPV diodes utilizing front-surface spectral control filters have been tested in a vacuum cavity and a TPV thermal-to-electric conversion efficiency (η TPV ) and a power density (PD) of η TPV = 19% and PD=0.58 W/cm 2 were measured for T radiator = 950 C and T diode = 27 C. Recombination coefficients deduced from minority carrier measurements and the theory reviewed in this article predict a practical limit to the maximum achievable conversion efficiency and power density for 0.53eV InGaAsSb TPV. The limits for the above operating temperatures are projected to be η TPV = 26% and PD = 0.75 W/cm 2 . These limits are extended to η TPV = 30% and PD = 0.85W/cm 2 if the diode active region is bounded by a reflective back surface to enable photon recycling and a two-pass optical path length. The internal quantum efficiency of the InGaAsSb TPV diode is close to the theoretically predicted limits, with the exception of short wavelength absorption in GaSb contact layers. Experiments show that the open circuit voltage of the 0.53eV InGaAsSb TPV diodes is not strongly dependent on the device architectures studied in this work where both N/P and P/N double heterostructure diodes have been grown with various acceptor and donor doping levels, having GaSb and AlGaAsSb confinement, and also partial back surface reflectors. Lattice matched InGaAsSb TPV diodes were fabricated with bandgaps ranging from 0.6 to 0.5eV without significant degradation of the open circuit voltage factor, quantum efficiency, or fill factor as the composition approached the miscibility gap. The key diode performance parameter which is limiting efficiency and power density below the theoretical limits in InGaAsSb TPV devices is the open circuit voltage. The open circuit voltages of state-of-the-art 0.53eV InGaAsSb TPV diode are ∼10

Research and investigation of a communication chain on optical fiber with a Fabry-Perot power diode for the automotive industry

Science.gov (United States)

Bacis, Irina Bristena; Vasile, Alexandru; Ionescu, Ciprian; Marghescu, Cristina

2016-12-01

The purpose of this paper is to analyze different power devices - emitters of optical flow, from the point of view of optical coupling, emitted optical powers, optical fiber losses and receiver. The research and characterization of the transmission through a power optical system is done using a computer system specialized for the automotive industry. This system/platform can deliver current pulses that are controlled by a computer through a software (it is possible to set different parameters such as pulse repetition frequency, duty cycle, and current intensity). For the experiments a power Fabry Perot 1035 laser diode operating in pulse with μφ 1055 nm, Ith = 40 mA, and Iop =750 mA was used with a single-mode SFM 128 optical fiber and an EM type optical coupler connected through alignment. Two types of measurements were conducted to demonstrate the usefulness of the experimental structure. In the first case the amplitude of the voltage pulses was measured at the output of an optical detector with receiving diode in a built-in amplifier with a 50 kΩ load resistance. In the second stage measurements were conducted to determine the optical power injected in the optical fiber and received at the reception cell of a power meter. Another parameter of optical coupling that can be measured using the experimental structure is irradiation. This parameter is very important to determine the optimum cutting angle of the fiber for continuity welding.

Single-mode pulsed dye laser pumped by using a diode-pumped Nd:YAG laser with a long pulse width

CERN Document Server

Yi, J H; Moon, H J; Rho, S P; Han, J M; Rhee, Y J; Lee, J M

1999-01-01

The lasing characteristics of a single-mode dye laser pumped by using a diode-pumped solid-state laser (DPSSL) with a high repetition rate is described. A 45-mm-long Nd:YAG rod was pumped by three CW diode arrays and it was acousto-optically Q-switched. A KTP crystal was used for intracavity frequency doubling. The pulse width of the laser ranged from 90 ns to 200 ns, depending on the diode current and the Q-switching frequency. The single-mode dye laser had a grazing incidence configuration. The pulse width of the dye laser was reduced to about 1/8 of the pumping laser pulse width. The effects of the DPSSL Q-switching frequency, the driving current, and the cavity loss on the dye laser pulse width were investigated by using a simple plane-parallel cavity. From the measured pulse width of the dye laser as a function of the reflectivity of the dye laser output coupler, we found that the cavity loss due to the frequency selection elements and the output coupler should be less than 70 % in order to avoid a drast...

Single-mode pulsed dye laser pumped by using a diode-pumped Nd:YAG laser with a long pulse width

International Nuclear Information System (INIS)

Yi, Jong Hoon; Kim, Jin Tae; Moon, Hee Jong; Rho, Si Pyo; Han, Jae Min; Rhee, Yong Joo; Lee, Jong Min

1999-01-01

The lasing characteristics of a single-mode dye laser pumped by using a diode-pumped solid-state laser (DPSSL) with a high repetition rate is described. A 45-mm-long Nd:YAG rod was pumped by three CW diode arrays and it was acousto-optically Q-switched. A KTP crystal was used for intracavity frequency doubling. The pulse width of the laser ranged from 90 ns to 200 ns, depending on the diode current and the Q-switching frequency. The single-mode dye laser had a grazing incidence configuration. The pulse width of the dye laser was reduced to about 1/8 of the pumping laser pulse width. The effects of the DPSSL Q-switching frequency, the driving current, and the cavity loss on the dye laser pulse width were investigated by using a simple plane-parallel cavity. From the measured pulse width of the dye laser as a function of the reflectivity of the dye laser output coupler, we found that the cavity loss due to the frequency selection elements and the output coupler should be less than 70 % in order to avoid a drastically reduced pulse width

A digital optical phase-locked loop for diode lasers based on field programmable gate array

Science.gov (United States)

Xu, Zhouxiang; Zhang, Xian; Huang, Kaikai; Lu, Xuanhui

2012-09-01

We have designed and implemented a highly digital optical phase-locked loop (OPLL) for diode lasers in atom interferometry. The three parts of controlling circuit in this OPLL, including phase and frequency detector (PFD), loop filter and proportional integral derivative (PID) controller, are implemented in a single field programmable gate array chip. A structure type compatible with the model MAX9382/MCH12140 is chosen for PFD and pipeline and parallelism technology have been adapted in PID controller. Especially, high speed clock and twisted ring counter have been integrated in the most crucial part, the loop filter. This OPLL has the narrow beat note line width below 1 Hz, residual mean-square phase error of 0.14 rad2 and transition time of 100 μs under 10 MHz frequency step. A main innovation of this design is the completely digitalization of the whole controlling circuit in OPLL for diode lasers.

Seven-laser diode end-pumped Nd

International Nuclear Information System (INIS)

Berger, J.; Welch, D.F.; Streifer, W.; Scifres, D.R.; Smith, J.J.; Hoffman, H.J.; Peisley, D.; Radecki, D.

1988-01-01

End pumping of solid-state lasers by single semiconductor laser diode arrays (LDAs) is efficient, but the maximum pump power is limited by the source brightness and matching the TEM/sub 00/ Nd:YAG cavity mode. To increase the output power from a solid-state Nd:YAG laser, one option is to employ a multiplicity of LDA to provide more pump power than is available from a single source. The authors report herein a 660-mW cw TEM/sub 00/ Nd:YAG laser, end-pumped by seven LDA, with bundled optical fibers coupling the light from each diode to the Nd:YAG rod end. The maximum electrical-to-optical conversion efficiency attained was 4.7% at 560-mW Nd:YAG output power. The LDAs (SDL-2430-C, 100 μm wide) were mounted on separate thermoelectric coolers to tune emission wavelength to the Nd:YAG absorption bands. The diodes were operated at their rated output power (50,000 h mean time to failure). The 110/125-μm diam 0.37-N.A. fibers were butt coupled to the lasers and glued together into a hexagonal close pack. The authors have obtained the highest average power demonstrated to date in the TEM/sub 00/ mode from a Nd:YAG laser, reliably end-pumped by multiple laser diodes with good efficiency

Frequency locking of compact laser-diode modules at 633 nm

Science.gov (United States)

Nölleke, Christian; Leisching, Patrick; Blume, Gunnar; Jedrzejczyk, Daniel; Pohl, Johannes; Feise, David; Sahm, Alexander; Paschke, Katrin

2018-02-01

This work reports on a compact diode-laser module emitting at 633 nm. The emission frequency can be tuned with temperature and current, while optical feedback of an internal DBR grating ensures single-mode operation. The laser diode is integrated into a micro-fabricated package, which includes optics for beam shaping, a miniaturized optical isolator, and a vapor cell as frequency reference. The achieved absolute frequency stability is below 10-8 , while the output power can be more than 10 mW. This compact absolute frequency-stabilized laser system can replace gas lasers and may be integrated in future quantum technology devices.

Controlling Fringe Sensitivity of Electro-Optic Holography Systems Using Laser Diode Current Modulation

Science.gov (United States)

Bybee, Shannon J.

2001-01-01

Electro-Optic Holography (EOH) is a non-intrusive, laser-based, displacement measurement technique capable of static and dynamic displacement measurements. EOH is an optical interference technique in which fringe patterns that represent displacement contour maps are generated. At excessively large displacements the fringe density may be so great that individual fringes are not resolvable using typical EOH techniques. This thesis focuses on the development and implementation of a method for controlling the sensitivity of the EOH system. This method is known as Frequency Translated Electro-Optic Holography (FTEOH). It was determined that by modulating the current source of the laser diode at integer multiples of the object vibration, the fringe pattern is governed by higher order Bessel function of the first kind and the number of fringes that represent a given displacement can be controlled. The reduction of fringes is theoretically unlimited but physically limited by the frequency bandwidth of the signal generator, providing modulation to the laser diode. Although this research technique has been verified theoretically and experimentally in this thesis, due to the current laser diode capabilities it is a tedious and time consuming process to acquire data using the FTEOH technique.

Analysis of CMOS Compatible Cu-Based TM-Pass Optical Polarizer

KAUST Repository

Ng, Tien Khee

2012-02-10

A transverse-magnetic-pass (TM-pass) optical polarizer based on Cu complementary metal-oxide-semiconductor technology platform is proposed and analyzed using the 2-D method-of-lines numerical model. In designing the optimum configuration for the polarizer, it was found that the metal-insulator-metal (MIM) polarizer structure is superior compared to the insulator-metal-insulator polarizer structure due to its higher polarization extinction ratio (PER) and low insertion loss. An optimized MIM TM-pass polarizer exhibits simulated long wavelength pass filter characteristics of > ?1.2 ?m, with fundamental TM 0 and TE 0 mode transmissivity of >70% and <5%, respectively, and with PER ?11.5 dB in the wavelength range of 1.2-1.6 ?m. The subwavelength and submicrometer features of this TM-polarizer are potentially suitable for compact and low power photonics integrated circuit implementation on silicon-based substrates. © 1989-2012 IEEE.

Ultrafast photoconductor detector-laser-diode transmitter

International Nuclear Information System (INIS)

Wang, C.L.; Davis, B.A.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.

1987-01-01

We report the results of an experiment in which we used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When we irradiated the neutron-damaged Cr-doped GaAs detector with 17-MeV electron beams, the temporal response was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. We are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

Progress In Optical Memory Technology

Science.gov (United States)

Tsunoda, Yoshito

1987-01-01

More than 20 years have passed since the concept of optical memory was first proposed in 1966. Since then considerable progress has been made in this area together with the creation of completely new markets of optical memory in consumer and computer application areas. The first generation of optical memory was mainly developed with holographic recording technology in late 1960s and early 1970s. Considerable number of developments have been done in both analog and digital memory applications. Unfortunately, these technologies did not meet a chance to be a commercial product. The second generation of optical memory started at the beginning of 1970s with bit by bit recording technology. Read-only type optical memories such as video disks and compact audio disks have extensively investigated. Since laser diodes were first applied to optical video disk read out in 1976, there have been extensive developments of laser diode pick-ups for optical disk memory systems. The third generation of optical memory started in 1978 with bit by bit read/write technology using laser diodes. Developments of recording materials including both write-once and erasable have been actively pursued at several research institutes. These technologies are mainly focused on the optical memory systems for computer application. Such practical applications of optical memory technology has resulted in the creation of such new products as compact audio disks and computer file memories.

Narrow linewidth diode laser modules for quantum optical sensor applications in the field and in space

Science.gov (United States)

Wicht, A.; Bawamia, A.; Krüger, M.; Kürbis, Ch.; Schiemangk, M.; Smol, R.; Peters, A.; Tränkle, G.

2017-02-01

We present the status of our efforts to develop very compact and robust diode laser modules specifically suited for quantum optics experiments in the field and in space. The paper describes why hybrid micro-integration and GaAs-diode laser technology is best suited to meet the needs of such applications. The electro-optical performance achieved with hybrid micro-integrated, medium linewidth, high power distributed-feedback master-oscillator-power-amplifier modules and with medium power, narrow linewidth extended cavity diode lasers emitting at 767 nm and 780 nm are briefly described and the status of space relevant stress tests and space heritage is summarized. We also describe the performance of an ECDL operating at 1070 nm. Further, a novel and versatile technology platform is introduced that allows for integration of any type of laser system or electro-optical module that can be constructed from two GaAs chips. This facilitates, for the first time, hybrid micro-integration, e.g. of extended cavity diode laser master-oscillator-poweramplifier modules, of dual-stage optical amplifiers, or of lasers with integrated, chip-based phase modulator. As an example we describe the implementation of an ECDL-MOPA designed for experiments on ultra-cold rubidium and potassium atoms on board a sounding rocket and give basic performance parameters.

Quench protection diodes for the large hadron collider LHC at CERN

International Nuclear Information System (INIS)

Hagedorn, D.; Naegele, W.

1992-01-01

For the quench protection of the main ring dipole and quadrupole magnets for the proposed Large Hadron Collider at CERN two lines of approach have been pursued for the realization of a suitable high current by-pass element and liquid helium temperature. Two commercially available diodes of the HERA type connected in parallel can easily meet the requirements if a sufficient good current sharing is imposed by current balancing elements. Design criteria for these current balancing elements are derived from individual diode characteristics. Single diode elements of thin base region, newly developed in industry, have been successfully tested. The results are promising and, if the diodes can be made with reproducible characteristics, they will provide the preferred solution especially in view of radiation hardness

A digital optical phase-locked loop for diode lasers based on field programmable gate array

Energy Technology Data Exchange (ETDEWEB)

Xu Zhouxiang; Zhang Xian; Huang Kaikai; Lu Xuanhui [Physics Department, Zhejiang University, Hangzhou, 310027 (China)

2012-09-15

We have designed and implemented a highly digital optical phase-locked loop (OPLL) for diode lasers in atom interferometry. The three parts of controlling circuit in this OPLL, including phase and frequency detector (PFD), loop filter and proportional integral derivative (PID) controller, are implemented in a single field programmable gate array chip. A structure type compatible with the model MAX9382/MCH12140 is chosen for PFD and pipeline and parallelism technology have been adapted in PID controller. Especially, high speed clock and twisted ring counter have been integrated in the most crucial part, the loop filter. This OPLL has the narrow beat note line width below 1 Hz, residual mean-square phase error of 0.14 rad{sup 2} and transition time of 100 {mu}s under 10 MHz frequency step. A main innovation of this design is the completely digitalization of the whole controlling circuit in OPLL for diode lasers.

A new approach to sum frequency generation of single-frequency blue light in a coupled ring cavity

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Petersen, Paul Michael

2014-01-01

We present a generic approach for the generation of tunable single-frequency light and demonstrate generation of more than 300 mW tunable light around 460 nm. One tapered diode laser is operated in a coupled ring cavity containing the nonlinear crystal and another tapered diode laser is sent thro...... through the nonlinear crystal in a single pass. A high conversion efficiency of more than 25 % of the single-pass laser is enabled by the high circulating power in the coupled cavity. The system is entirely self-stabilized with no need for electronic locking....

Optical sensor based on a single CdS nanobelt.

Science.gov (United States)

Li, Lei; Yang, Shuming; Han, Feng; Wang, Liangjun; Zhang, Xiaotong; Jiang, Zhuangde; Pan, Anlian

2014-04-23

In this paper, an optical sensor based on a cadmium sulfide (CdS) nanobelt has been developed. The CdS nanobelt was synthesized by the vapor phase transportation (VPT) method. X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM) results revealed that the nanobelt had a hexagonal wurtzite structure of CdS and presented good crystal quality. A single nanobelt Schottky contact optical sensor was fabricated by the electron beam lithography (EBL) technique, and the device current-voltage results showed back-to-back Schottky diode characteristics. The photosensitivity, dark current and the decay time of the sensor were 4 × 10⁴, 31 ms and 0.2 pA, respectively. The high photosensitivity and the short decay time were because of the exponential dependence of photocurrent on the number of the surface charges and the configuration of the back to back Schottky junctions.

High power diode laser remelting of metals

International Nuclear Information System (INIS)

Chmelickova, H; Tomastik, J; Ctvrtlik, R; Supik, J; Nemecek, S; Misek, M

2014-01-01

This article is focused on the laser surface remelting of the steel samples with predefined overlapping of the laser spots. The goal of our experimental work was to evaluate microstructure and hardness both in overlapped zone and single pass ones for three kinds of ferrous metals with different content of carbon, cast iron, non-alloy structural steel and tool steel. High power fibre coupled diode laser Laserline LDF 3600-100 was used with robotic guided processing head equipped by the laser beam homogenizer that creates rectangular beam shape with uniform intensity distribution. Each sample was treated with identical process parameters - laser power, beam diameter, focus position, speed of motion and 40% spot overlap. Dimensions and structures of the remelted zone, zone of the partial melting, heat affected zone and base material were detected and measured by means of laser scanning and optical microscopes. Hardness progress in the vertical axis of the overlapped zone from remelted surface layer to base material was measured and compared with the hardness of the single spots. The most hardness growth was found for cast iron, the least for structural steel. Experiment results will be used to processing parameters optimization for each tested material separately.

Analysis of waveguide architectures of InGaN/GaN diode lasers by nearfield optical microscopy

Science.gov (United States)

Friede, Sebastian; Tomm, Jens W.; Kühn, Sergei; Hoffmann, Veit; Wenzel, Hans

2017-02-01

Waveguide (WG) architectures of 420-nm emitting InAlGaN/GaN diode lasers are analyzed by photoluminescence (PL) and photocurrent (PC) spectroscopy using a nearfield scanning optical microscope (NSOM) for excitation and detection. The measurements with a spatial resolution of 100 nm are implemented by scanning the fiber tip along the unprepared front facets of standard devices. PL is collected by the fiber tip, whereas PCs are extracted from the contacts that are anyway present for power supply. The mechanisms of signal generation are addressed in detail. The components of the `optical active region', multiple quantum wells (MQW), WGs, and cladding layers are separately inspected. Even separate analysis of p- and n-sections of the WG become possible. Defect levels are detected in the p-part of the WG. Their presence is consistent with the doping by Mg. An increased efficiency of carrier capture into InGaN/GaN WGs compared to GaN WGs is observed. Thus, beyond the improved optical confinement, the electrical confinement is improved, as well. NSOM PL and PC at GaN based devices do not reach the clarity and spatial resolution for WG mode analysis as seen before for GaAs based devices. This is due to higher modal absorption and higher WG losses. NSOM based optical analysis turns out to be an efficient tool for analysis of single layers grown into InAlGaN/GaN diode laser structures, even if this analysis is done at a packaged ready-to-work device.

Improved contrast polymer light-emitting diode with optical interference layers

International Nuclear Information System (INIS)

Liu, H.Y.; Sun, R.G.; Yang, K.X.; Peng, J.B.; Cao, Y.; Joo, S.K.

2007-01-01

An improved contrast polymer light diode based on the destructive optical interference layers deposited between the glass substrate and ITO anode is fabricated. It is unnecessary to be considered that the additional optical interference structure will impede carrier injection from the electrode to the carrier-transporting layer. Due to the quarter-wavelength thickness of medial ITO layer, the reflected light from first Cr layer is inverted 180 o out of phase with the reflected light from second Cr layer, resulting in the destructive interference. It is evident that the contrast ratio of the device with the optical interference structure is about three times higher than that of the conventional device

Developing a Methodology for Elaborating a Pulsed Optical Safety Area for High Power Laser Diodes

National Research Council Canada - National Science Library

Yankov, Plamen

2006-01-01

The laser diodes are efficient sources of optical radiation. The maximum optical peak power depends on the pulse duration of the driving current pulse - reducing the pulse duration the safety peak power is increased...

Graphene geometric diodes for terahertz rectennas

International Nuclear Information System (INIS)

Zhu Zixu; Joshi, Saumil; Grover, Sachit; Moddel, Garret

2013-01-01

We demonstrate a new thin-film graphene diode called a geometric diode that relies on geometric asymmetry to provide rectification at 28 THz. The geometric diode is coupled to an optical antenna to form a rectenna that rectifies incoming radiation. This is the first reported graphene-based antenna-coupled diode working at 28 THz, and potentially at optical frequencies. The planar structure of the geometric diode provides a low RC time constant, on the order of 10 −15 s, required for operation at optical frequencies, and a low impedance for efficient power transfer from the antenna. Fabricated geometric diodes show asymmetric current–voltage characteristics consistent with Monte Carlo simulations for the devices. Rectennas employing the geometric diode coupled to metal and graphene antennas rectify 10.6 µm radiation, corresponding to an operating frequency of 28 THz. The graphene bowtie antenna is the first demonstrated functional antenna made using graphene. Its response indicates that graphene is a suitable terahertz resonator material. Applications for this terahertz diode include terahertz-wave and optical detection, ultra-high-speed electronics and optical power conversion. (paper)

Creep Deformation and Rupture Behavior of Single- and Dual-Pass 316LN Stainless-Steel-Activated TIG Weld Joints

Science.gov (United States)

Vijayanand, V. D.; Vasudevan, M.; Ganesan, V.; Parameswaran, P.; Laha, K.; Bhaduri, A. K.

2016-06-01

Creep deformation and rupture behavior of single-pass and dual-pass 316LN stainless steel (SS) weld joints fabricated by an autogenous activated tungsten inert gas welding process have been assessed by performing metallography, hardness, and conventional and impression creep tests. The fusion zone of the single-pass joint consisted of columnar zones adjacent to base metals with a central equiaxed zone, which have been modified extensively by the thermal cycle of the second pass in the dual-pass joint. The equiaxed zone in the single-pass joint, as well as in the second pass of the dual-pass joint, displayed the lowest hardness in the joints. In the dual-pass joint, the equiaxed zone of the first pass had hardness comparable to the columnar zone. The hardness variations in the joints influenced the creep deformation. The equiaxed and columnar zone in the first pass of the dual-pass joint was more creep resistant than that of the second pass. Both joints possessed lower creep rupture life than the base metal. However, the creep rupture life of the dual-pass joint was about twofolds more than that of the single-pass joint. Creep failure in the single-pass joint occurred in the central equiaxed fusion zone, whereas creep cavitation that originated in the second pass was blocked at the weld pass interface. The additional interface and strength variation between two passes in the dual-pass joint provides more restraint to creep deformation and crack propagation in the fusion zone, resulting in an increase in the creep rupture life of the dual-pass joint over the single-pass joint. Furthermore, the differences in content, morphology, and distribution of delta ferrite in the fusion zone of the joints favors more creep cavitation resistance in the dual-pass joint over the single-pass joint with the enhancement of creep rupture life.

Design and characterization of single photon avalanche diodes arrays

Science.gov (United States)

Neri, L.; Tudisco, S.; Lanzanò, L.; Musumeci, F.; Privitera, S.; Scordino, A.; Condorelli, G.; Fallica, G.; Mazzillo, M.; Sanfilippo, D.; Valvo, G.

2010-05-01

During the last years, in collaboration with ST-Microelectronics, we developed a new avalanche photo sensor, single photon avalanche diode (SPAD) see Ref.[S. Privitera, et al., Sensors 8 (2008) 4636 [1];S. Tudisco et al., IEEE Sensors Journal 8 (2008) 1324 [2

Ultrafast photoconductive detector-laser-diode transmitter

International Nuclear Information System (INIS)

Wang, C.L.; Davies, T.J.; Nelson, M.A.; Thomas, M.C.; Zagarino, P.A.; Davis, B.A.

1987-01-01

The authors report the results of an experiment in which they used an ultrafast, photoconductive, radiation detector to drive a fast laser-diode transmitter. When they irradiated the neutron-damaged Cr-doped Ga/As detector with 17-MeV electron beams, the temporal response of was measured to be less than 30 ps. The pulses from this detector modulated a fast GaAlAs laser diode to transmit the laser output through 30- and 1100-m optical fibers. Preliminary results indicate that 50- and 80-ps time resolutions, respectively, are obtainable with these fibers. They are now working to integrate the photoconductive detector and the laser diode transmitter into a single chip

Performance of the cold powered diodes and diode leads in the main magnets of the LHC

CERN Document Server

Willering, G P; Bajko, M; Bednarek, M; Bottura, L; Charifoulline, Z; Dahlerup-Petersen, K; Dib, G; D'Angelo, G; Gharib, A; Grand-Clement, L; Izquierdo Bermudez, S; Prin, H; Roger, V; Rowan, S; Savary, F; Tock, J-Ph; Verweij, A

2015-01-01

During quench tests in 2011 variations in resistance of an order of magnitude were found in the diode by-pass circuit of the main LHC magnets. An investigation campaign was started to understand the source, the occurrence and the impact of the high resistances. Many tests were performed offline in the SM18 test facility with a focus on the contact resistance of the diode to heat sink contact and the diode wafer temperature. In 2014 the performance of the diodes and diode leads of the main dipole bypass systems in the LHC was assessed during a high current qualification test. In the test a current cycle similar to a magnet circuit discharge from 11 kA with a time constant of 100 s was performed. Resistances of up to 600 μΩ have been found in the diode leads at intermediate current, but in general the high resistances decrease at higher current levels and no sign of overheating of diodes has been seen and the bypass circuit passed the test. In this report the performance of the diodes and in particular the co...

Axioms for behavioural congruence of single-pass instruction sequences

NARCIS (Netherlands)

Bergstra, J.A.; Middelburg, C.A.

2017-01-01

In program algebra, an algebraic theory of single-pass instruction sequences, three congruences on instruction sequences are paid attention to: instruction sequence congruence, structural congruence, and behavioural congruence. Sound and complete axiom systems for the first two congruences were

Degradation Processes in High-Power Diode Lasers under External Optical Feedback

DEFF Research Database (Denmark)

Tomm, Jens. W.; Hempel, Martin; Petersen, Paul Michael

2013-01-01

The effect of moderate external feedback on the gradual degradation of 808 nm emitting AlGaAs-based high-power broad-area diode lasers is analyzed. Eventually the quantum well that actually experiences the highest total optical load remains unaffected by the aging, while severe impact...

All-Optical flip-flop operation using a SOA and DFB laser diode optical feedback combination

DEFF Research Database (Denmark)

D'Oosterlinck, W.; Öhman, Filip; Buron, Jakob Due

2007-01-01

We report on the switching of an all-optical flip-flop consisting of a semiconductor optical amplifier (SOA) and a distributed feedback laser diode (DFB), bidirectionally coupled to each other. Both simulation and experimental results are presented. Switching times as low as 50ps, minimal required...... switch pulse energies below lpJ and a repetition rate of 1.25GHz have been measured. Contrast ratios over 25dB have been obtained. The dependence on the pulse length and CW input power of the minimal required switch energy is investigated....

All-optical OFDM demultiplexing by spectral magnification and band-pass filtering.

Science.gov (United States)

Palushani, E; Mulvad, H C Hansen; Kong, D; Guan, P; Galili, M; Oxenløwe, L K

2014-01-13

We propose a simple OFDM receiver allowing for the use of standard WDM receivers to receive spectrally advanced OFDM signals. We propose to spectrally magnify the optical-OFDM super-channels using a spectral telescope consisting of two time-lenses, which enables reduced inter-carrier-interference in subcarrier detection by simple band-pass filtering. A demonstration on an emulated 100 Gbit/s DPSK optical-OFDM channel shows improved sensitivities after 4-times spectral magnification.

Blue light emitting diodes for optical stimulation of quartz in retrospective dosimetry and dating

DEFF Research Database (Denmark)

Bøtter-Jensen, L.; Duller, G.A.T.; Murray, A.S.

1999-01-01

Recently developed blue light emitting diodes (LEDs) for the optical stimulation of quartz for use in routine optically stimulated luminescence (OSL) dating and retrospective dosimetry have been tested. For similar power densities, it was found that the higher energy light provided by the blue LE......, preliminary results from ramping the blue light power output with time are demonstrated. It is shown that this technique enables the separation of OSL components with differing stimulation rates.......Recently developed blue light emitting diodes (LEDs) for the optical stimulation of quartz for use in routine optically stimulated luminescence (OSL) dating and retrospective dosimetry have been tested. For similar power densities, it was found that the higher energy light provided by the blue LEDs...... (470 nm) gives order of magnitude greater rate of stimulation in quartz than that from conventional blue-green light filtered from a halogen lamp. A practical blue LED OSL configuration is described. From comparisons of OSL decay curves produced by green and blue light sources, and by examination...

Single Pass Albumin Dialysis in Hepatorenal Syndrome

Directory of Open Access Journals (Sweden)

Rahman Ebadur

2008-01-01

Full Text Available Hepatorenal syndrome (HRS is the most appalling complication of acute or chronic liver disease with 90% mortality rate. Single pass albumin dialysis (SPAD can be considered as a noble liver support technique in HRS. Here, we present a case of a young healthy patient who developed hyperacute fulminant liver failure that progressed to HRS. The patient was offered SPAD as a bridge to liver transplantation, however, it resulted in an excellent recovery.

Optical Sensor Based on a Single CdS Nanobelt

Directory of Open Access Journals (Sweden)

Lei Li

2014-04-01

Full Text Available In this paper, an optical sensor based on a cadmium sulfide (CdS nanobelt has been developed. The CdS nanobelt was synthesized by the vapor phase transportation (VPT method. X-Ray Diffraction (XRD and Transmission Electron Microscopy (TEM results revealed that the nanobelt had a hexagonal wurtzite structure of CdS and presented good crystal quality. A single nanobelt Schottky contact optical sensor was fabricated by the electron beam lithography (EBL technique, and the device current-voltage results showed back-to-back Schottky diode characteristics. The photosensitivity, dark current and the decay time of the sensor were 4 × 104, 31 ms and 0.2 pA, respectively. The high photosensitivity and the short decay time were because of the exponential dependence of photocurrent on the number of the surface charges and the configuration of the back to back Schottky junctions.

Single and double pass solar air heaters with wire mesh as packing bed

Energy Technology Data Exchange (ETDEWEB)

Aldabbagh, L.B.Y.; Egelioglu, F. [Mechanical Engineering Department, Eastern Mediterranean University, Magosa, Mersin 10 (Turkey); Ilkan, M. [School of Computing and Tecnology, Eastern Mediterranean University, Magosa, Mersin 10 (Turkey)

2010-09-15

The thermal performances of single and double pass solar air heaters with steel wire mesh layers are used instead of a flat absorber plate are investigated experimentally. The effects of mass flow rate of air on the outlet temperature and thermal efficiency were studied. The results indicate that the efficiency increases with increasing the mass flow rate for the range of the flow rate used in this work between 0.012 and 0.038 kg/s. For the same flow rate, the efficiency of the double pass is found to be higher than the single pass by 34-45%. Moreover, the maximum efficiencies obtained for the single and the double pass air collectors are 45.93 and 83.65% respectively for the mass flow rate of 0.038 kg/s. Comparison of the results of a packed bed collector with those of a conventional collector shows a substantial enhancement in the thermal efficiency. (author)

Performance demonstration of a single-frequency optically-pumped cesium beam frequency standard for space applications

Science.gov (United States)

Lecomte, S.; Haldimann, M.; Ruffieux, R.; Thomann, P.; Berthoud, P.

2017-11-01

Observatoire de Neuchâtel (ON) is developing a compact optically-pumped cesium beam frequency standard in the frame of an ESA-ARTES 5 project. The simplest optical scheme, which is based on a single optical frequency for both preparation and detection processes of atoms, has been chosen to fulfill reliability constraints of space applications. With our laboratory demonstrator operated at 852 nm (D2 line), we have measured a frequency stability of σy=2.74x10-12 τ -1/2, which is compliant with the Galileo requirement. The atomic resonator is fully compliant to be operated with a single diode laser at 894 nm (D1 line). Sensitivity measurements of the clock signal to the microwave power and to the optical pumping power are also presented. Present performance limitations are discussed and further improvements are proposed in order to reach our ultimate frequency stability goal of σy=1x10-12 τ -1/2. The clock driving software is also briefly described.

High peak-power kilohertz laser system employing single-stage multi-pass amplification

Science.gov (United States)

Shan, Bing; Wang, Chun; Chang, Zenghu

2006-05-23

The present invention describes a technique for achieving high peak power output in a laser employing single-stage, multi-pass amplification. High gain is achieved by employing a very small "seed" beam diameter in gain medium, and maintaining the small beam diameter for multiple high-gain pre-amplification passes through a pumped gain medium, then leading the beam out of the amplifier cavity, changing the beam diameter and sending it back to the amplifier cavity for additional, high-power amplification passes through the gain medium. In these power amplification passes, the beam diameter in gain medium is increased and carefully matched to the pump laser's beam diameter for high efficiency extraction of energy from the pumped gain medium. A method of "grooming" the beam by means of a far-field spatial filter in the process of changing the beam size within the single-stage amplifier is also described.

An optical, electrical and ultrasonic layered single sensor for ingredient measurement in liquid

International Nuclear Information System (INIS)

Kimoto, A; Kitajima, T

2010-01-01

In this paper, an optical, electrical and ultrasonic layered single sensor is proposed as a new, non-invasive sensing method for the measurement of ingredients in liquid, particularly in the food industry. In the proposed sensor, the photo sensors and the PVDF films with the transparent conductive electrode are layered and the optical properties of the liquid are measured by a light emitting diode (LED) and a phototransistor (PT). In addition, the electrical properties are measured by indium tin oxide (ITO) film electrodes as the transparent conductive electrodes of PVDF films arranged on the surfaces of the LED and PT. Moreover, the ultrasonic properties are measured by PVDF films. Thus, the optical, electrical and ultrasonic properties in the same space of the liquid can be simultaneously measured at a single sensor. To test the sensor experimentally, three parameters of the liquid—such as concentrations of yellow color, sodium chloride (NaCl) and ethanol in distilled water—were estimated using the measurement values of the optical, electrical and ultrasonic properties obtained with the proposed sensor. The results suggested that it is possible to estimate the three ingredient concentrations in the same space of the liquid from the optical, electrical and ultrasonic properties measured by the proposed single sensor, although there are still some problems such as measurement accuracy that must be solved

A Fabry-Pérot electro-optic sensing system using a drive-current-tuned wavelength laser diode.

Science.gov (United States)

Kuo, Wen-Kai; Wu, Pei-Yu; Lee, Chang-Ching

2010-05-01

A Fabry-Pérot enhanced electro-optic sensing system that utilizes a drive-current-tuned wavelength laser diode is presented. An electro-optic prober made of LiNbO(3) crystal with an asymmetric Fabry-Pérot cavity is used in this system. To lock the wavelength of the laser diode at resonant condition, a closed-loop power control scheme is proposed. Experiment results show that the system can keep the electro-optic prober at high sensitivity for a long working time when the closed-loop control function is on. If this function is off, the sensitivity may be fluctuated and only one-third of the best level in the worst case.

Optical pumping of Rb by Ti:Sa laser and high-power laser diode

Czech Academy of Sciences Publication Activity Database

Buchta, Zdeněk; Rychnovský, Jan; Lazar, Josef

2006-01-01

Roč. 8, č. 1 (2006), s. 350-354 ISSN 1454-4164 R&D Projects: GA AV ČR IAA1065303; GA ČR GA102/04/2109 Institutional research plan: CEZ:AV0Z20650511 Keywords : optical pumping * Ti:Sa laser * laser diode * emission linewidth * spectroscopy * laser frequency stabilization Subject RIV: BH - Optics, Masers, Lasers Impact factor: 1.106, year: 2006

Optical vortex generation from a diode-pumped alexandrite laser

Science.gov (United States)

Thomas, G. M.; Minassian, A.; Damzen, M. J.

2018-04-01

We present the demonstration of an optical vortex mode directly generated from a diode-pumped alexandrite slab laser, operating in the bounce geometry. This is the first demonstration of an optical vortex mode generated from an alexandrite laser or from any other vibronic laser. An output power of 2 W for a vortex mode with a ‘topological charge’ of 1 was achieved and the laser was made to oscillate with both left- and right-handed vorticity. The laser operated at two distinct wavelengths simultaneously, 755 and 759 nm, due to birefringent filtering in the alexandrite gain medium. The result offers the prospect of broadly wavelength tunable vortex generation directly from a laser.

Silicon MIS diodes with Cr2O3 nanofilm: Optical, morphological/structural and electronic transport properties

International Nuclear Information System (INIS)

Erdogan, Ibrahim Y.; Guellue, O.

2010-01-01

In this work we report the optical, morphological and structural characterization and diode application of Cr 2 O 3 nanofilms grown on p-Si substrates by spin coating and annealing process. X-ray diffraction (XRD), non-contact mode atomic force microscopy (NC-AFM), ultraviolet-visible (UV-vis) spectroscopy and photoluminescence (PL) spectroscopy were used for characterization of nanofilms. For Cr 2 O 3 nanofilms, the average particle size determined from XRD and NC-AFM measurements was approximately 70 nm. Structure analyses of nanofilms demonstrate that the single phase Cr 2 O 3 on silicon substrate is of high a crystalline structure with a dominant in hexagonal (1 1 0) orientation. The morphologic analysis of the films indicates that the films formed from hexagonal nanoparticles are with low roughness and uniform. UV-vis absorption measurements indicate that the band gap of the Cr 2 O 3 film is 3.08 eV. The PL measurement shows that the Cr 2 O 3 nanofilm has a strong and narrow ultraviolet emission, which facilitates potential applications in future photoelectric nanodevices. Au/Cr 2 O 3 /p-Si metal/interlayer/semiconductor (MIS) diodes were fabricated for investigation of the electronic properties such as current-voltage and capacitance-voltage. Ideality factor and barrier height for Au//Cr 2 O 3 /p-Si diode were calculated as 2.15 eV and 0.74 eV, respectively. Also, interfacial state properties of the MIS diode were determined. The interface-state density of the MIS diode was found to vary from 2.90 x 10 13 eV -1 cm -2 to 8.45 x 10 12 eV -1 cm -2 .

Efficient continuous-wave 1112 nm Nd:YAG laser operation under direct diode pumping at 885 nm

International Nuclear Information System (INIS)

Gao, J; Dai, X J; Zhang, L; Wu, X D

2013-01-01

We report compact diode-end-pumped continuous-wave laser operation at 1112 nm under 885 nm diode-direct pumping for the first time. On the basis of the R 2 →Y 6 transition in a conventional Nd:YAG (yttrium aluminum garnet) single crystal, the maximum output power of 12.5 W is achieved, with an optical to optical efficiency of 46.6% and a slope efficiency of 52.9%. To the best of our knowledge, this represents the highest output at 1112 nm generated by a diode-end-pumped Nd:YAG laser. Furthermore, it is the highest optical to optical efficiency ever reported for 1112 nm Nd:YAG lasers. The short term power stability is ∼0.32% at 12.0 W output. (letter)

Algebraic invariants for reflection Mueller polarimetry via uncompensated double pass illumination-collection optics.

Science.gov (United States)

Ossikovski, Razvigor; Vizet, Jérémy

2016-07-01

We report on the identification of the two algebraic invariants inherent to Mueller matrix polarimetry measurements performed through double pass illumination-collection optics (e.g., an optical fiber or an objective) of unknown polarimetric response. The practical use of the invariants, potentially applicable to the characterization of nonreciprocal media, is illustrated on experimental examples.

Laser Diode Beam Basics, Manipulations and Characterizations

CERN Document Server

Sun, Haiyin

2012-01-01

Many optical design technical books are available for many years which mainly deal with image optics design based on geometric optics and using sequential raytracing technique. Some books slightly touched laser beam manipulation optics design. On the other hand many books on laser diodes have been published that extensively deal with laser diode physics with little touching on laser diode beam manipulations and characterizations. There are some internet resources dealing with laser diode beams. However, these internet resources have not covered enough materials with enough details on laser diode beam manipulations and characterizations. A technical book concentrated on laser diode beam manipulations and characterizations can fit in to the open and provide useful information to laser diode users. Laser Diode Beam Basics, Manipulations and  Characterizations is concentrated on the very practical side of the subject, it only discusses the basic physics and mathematics that are necessary for the readers in order...

Diode-laser-pump module with integrated signal ports for pumping amplifying fibers and method

Science.gov (United States)

Savage-Leuchs,; Matthias, P [Woodinville, WA

2009-05-26

Apparatus and method for collimating pump light of a first wavelength from laser diode(s) into a collimated beam within an enclosure having first and second optical ports, directing pump light from the collimated beam to the first port; and directing signal light inside the enclosure between the first and second port. The signal and pump wavelengths are different. The enclosure provides a pump block having a first port that emits pump light to a gain fiber outside the enclosure and that also passes signal light either into or out of the enclosure, and another port that passes signal light either out of or into the enclosure. Some embodiments use a dichroic mirror to direct pump light to the first port and direct signal light between the first and second ports. Some embodiments include a wavelength-conversion device to change the wavelength of at least some of the signal light.

Generating a high brightness multi-kilowatt laser by dense spectral combination of VBG stabilized single emitter laser diodes

Science.gov (United States)

Fritsche, H.; Koch, Ralf; Krusche, B.; Ferrario, F.; Grohe, Andreas; Pflueger, S.; Gries, W.

2014-05-01

Generating high power laser radiation with diode lasers is commonly realized by geometrical stacking of diode bars, which results in high output power but poor beam parameter product (BPP). The accessible brightness in this approach is limited by the fill factor, both in slow and fast axis. By using a geometry that accesses the BPP of the individual diodes, generating a multi kilowatt diode laser with a BPP comparable to fiber lasers is possible. We will demonstrate such a modular approach for generating multi kilowatt lasers by combining single emitter diode lasers. Single emitter diodes have advantages over bars, mainly a simplified cooling, better reliability and a higher brightness per emitter. Additionally, because single emitters can be arranged in many different geometries, they allow building laser modules where the brightness of the single emitters is preserved. In order to maintain the high brightness of the single emitter we developed a modular laser design which uses single emitters in a staircase arrangement, then coupling two of those bases with polarization combination which is our basic module. Those modules generate up to 160 W with a BPP better than 7.5 mm*mrad. For further power scaling wavelength stabilization is crucial. The wavelength is stabilized with only one Volume Bragg Grating (VBG) in front of a base providing the very same feedback to all of the laser diodes. This results in a bandwidth of BPP better than 7.5 mm*mrad, which can easily coupled into a 100 μm fiber and 0.15 NA.

High-power green diode laser systems for biomedical applications

DEFF Research Database (Denmark)

Müller, André

propagation parameters and therefore efficiently increases the brightness of compact and cost-effective diode laser systems. The condition of overlapping beams is an ideal scenario for subsequent frequency conversion. Based on sum-frequency generation of two beam combined diode lasers a 3.2 fold increase...... output power of frequency doubled single emitters is limited by thermal effects potentially resulting in laser degradation and failure. In this work new concepts for power scaling of visible diode laser systems are introduced that help to overcome current limitations and enhance the application potential....... Implementing the developed concept of frequency converted, beam combined diode laser systems will help to overcome the high pump thresholds for ultrabroad bandwidth titanium sapphire lasers, leading towards diode based high-resolution optical coherence tomography with enhanced image quality. In their entirety...

Spectral properties of a broad-area diode laser with off-axis external-cavity feedback

DEFF Research Database (Denmark)

Chi, Mingjun; Petersen, Paul Michael

2013-01-01

Spectral properties, both the optical spectrum and the intensity noise spectrum, of a broad-area diode laser with off-axis external-cavity feedback are presented. We show that the optical spectrum of the diode laser system is shifted to longer wavelengths due to the external-cavity feedback....... The intensity noise spectrum of the diode laser shows that the intensity noise is increased strongly by the external-cavity feedback. External-cavity modes are excited in the external cavity even in the off-axis configuration. The peak spacing of the intensity noise spectrum shows that single roundtrip external......-cavity modes are excited. We believe that the four-wave mixing process in the broad-area diode laser is responsible for the establishment of the external-cavity mode....

Forest Analysis by Single-Pass Millimeterwave SAR Tomography

OpenAIRE

Schmitt, Michael; Zhu, Xiao Xiang

2016-01-01

Recent investigations show that millimeterwave SAR tomography provides an interesting means for the analysis of forested areas, especially if single-pass systems are employed. Providing very high resolutions in the decimeter domain and highly coherent data also for slightly windy conditions, even individual trees can be considered. Besides, it has been shown that a certain amount of canopy penetration is possible in spite of the short wavelength.

High gain semiconductor optical amplifier — Laser diode at visible wavelength

KAUST Repository

Shen, Chao; Lee, Changmin; Ng, Tien Khee; Nakamura, Shuji; Speck, James S.; DenBaars, Steven P.; Alyamani, Ahmed Y.; El-Desouki, Munir M.; Ooi, Boon S.

2017-01-01

We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

High gain semiconductor optical amplifier — Laser diode at visible wavelength

KAUST Repository

Shen, Chao

2017-02-07

We reported on the first experimental demonstration of a two-section semipolar InGaN-based laser diode with monolithically integrated semiconductor optical amplifier (SOA-LD). The onset of amplification effect was measured at 4V SOA bias (VSOA). The SOA-LD shows a large gain of 5.32 dB at Vsoa = 6 V.

Investigation of single lateral mode for 852nm diode lasers with ridge waveguide design

Science.gov (United States)

Liu, Chu; Guan, Baolu; Mi, Guoxin; Liao, Yiru; Liu, Zhenyang; Li, Jianjun; Xu, Chen

2016-11-01

852nm Narrow linewidth lasers can be widely used in the field of ultra-fine spectrum measurement, Cs atomic clock control, satellite and optical fiber communication and so on. Furthermore, the stability of the single lateral mode is a very important condition to guarantee the narrow linewidth lasers. Here we investigate experimentally the influence of the narrow ridge structure and asymmetrical waveguide design on the stability single lateral mode of an 852nm diode laser. According to the waveguide theoretical analysis, ridge mesa etch depth (Δη , related to the refractive index difference of parallel to the junction) and ridge mesa width (the narrower the more control force to low order mode) are the main elements for lateral modes. In this paper, we designed different structures to investigate and verify major factors for lateral mode by experiment, and to confirm our thought. Finally, the 5μm mesa ridge laser, 800nm etch depth, with groove structure obtains excellent steady single lateral mode output by 150mA operating current and 30°C temperature. The optical spectrum FWHM is 0.5nm and side mode suppression ratio is 27dBm with uncoated. The laser with 1mm cavity length showed the threshold current of 50mA, a lasing wavelength of λ = 852.6nm, slope efficiency of above 0.7mW/mA. We accomplished single lateral mode of ridge waveguide edge-emitting lasers which can also be used as a laser source in the ultra-narrow linewidth external cavity laser system.

A mathematical modeling framework to evaluate the performance of single diode and double diode based SPV systems

Directory of Open Access Journals (Sweden)

Sangram Bana

2016-11-01

Full Text Available In order to predict the performance of a PV system, a reliable and accurate simulation design of PV systems before being installed is a necessity. The present study concerns the development of single and double diode model of solar PV system and ensures the best suited model under specific environmental condition for accurate performance prediction. The information provided in the manufacturers’ data sheet is not sufficient for developing a Simulink based single and double diode models of PV module. These parameters are crucial to predict accurate performance of a PV module. These parameters of the proposed solar PV models have been calculated using an efficient iterative technique. This paper compares the simulation results of both the models with manufacturer’s data sheet to investigate the accuracy and validity. A MATLAB/Simulink based comparative performance analysis of these models under inconsistent atmospheric conditions and the effect of variations in model parameters has been carried out. Despite the simplicity, these models are highly sensitive and respond to a slight variation in temperature and insolation. It is observed that double diode PV model is more accurate under low intensity insolation or shading condition. The performance evaluation of the models under present study will be helpful to understand the I-V curves, which will enable us in predicting the solar PV system power production under variable input conditions.

Simple and efficient method of spin-polarizing a metastable helium beam by diode laser optical pumping

International Nuclear Information System (INIS)

Granitza, B.; Salvietti, M.; Torello, E.; Mattera, L.; Sasso, A.

1995-01-01

Diode laser optical pumping to produce a highly spin-polarized metastable He beam to be used in a spin-polarized metastable atom deexcitation spectroscopy experiment on magnetized surfaces is described. Efficient pumping of the beam is performed by means of an SDL-6702 distributed Bragg reflector diode laser which yields 50 mW of output power in a single longitudinal mode at 1083 nm, the resonance wavelength for the 2 3 S→2 3 P 0,1,2 (D 0 , D 1 , and D 2 ) transitions of He*. The light is circularly polarized by a quarter-wave plate, allowing easy change of the sense of atomic polarization. The laser frequency can be locked to the atomic transition for several hours by phase-sensitive detection of the saturated absorption signal in a He discharge cell. Any of the three transitions of the triplet system can be pumped with the laser but the maximum level of atomic polarization of 98.5% is found pumping the D 2 line. copyright 1995 American Institute of Physics

A single-molecule diode

Science.gov (United States)

Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B.; Mayor, Marcel

2005-01-01

We have designed and synthesized a molecular rod that consists of two weakly coupled electronic π -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current–voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur–gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current–voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical π -systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current–voltage characteristics, similar to the phenomena in a semiconductor diode. PMID:15956208

Selective isotope determination of lanthanum by diode-laser-initiated resonance-ionization mass spectrometry

International Nuclear Information System (INIS)

Young, J.P.; Shaw, R.W.

1995-01-01

A diode-laser step has been incorporated into a resonance-ionization mass spectrometry optical excitation process to enhance the isotopic selectivity of the technique. Lanthanum isotope ratio enhancements as high as 10 3 were achieved by use of a single-frequency cw diode laser tuned to excite the first step of a three-step excitation--ionization optical process; the subsequent steps were excited by use of a pulsed dye laser. Applying the same optical technique, we measured atomic hyperfine constants for the high-lying even-parity 4 D 5/2 state of lanthanum at 30 354 cm --1 . The general utility of this spectral approach is discussed

The fabrication and characterization of organic light-emitting diodes using transparent single-crystal Si membranes

International Nuclear Information System (INIS)

Lee, Su-Hwan; Kim, Dal-Ho; Kim, Ji-Heon; Lee, Gon-Sub; Park, Jea-Gun; Takeo, Katoh

2009-01-01

For applications such as solar cells and displays, transparent single-crystal Si membranes were fabricated on a silicon-on-insulator (SOI) wafer. The SOI wafer included a buried layer of SiO 2 and Si 3 N 4 as an etch-stop layer. The etch-stop layer enabled fabrication of transparent single-crystal Si membranes with various thicknesses, and the thinning technology is described. For membranes with thicknesses of 18, 72 and 5000 nm, the respective optical transparent were 96.9%, 93.7% and 9% for R (red, λ = 660 nm), 96.9%, 91.4% and 1% for G (green, λ = 525 nm), and 97.0%, 93.2% and 0% for B (blue, λ = 470 nm). Organic light-emitting diodes (OLEDs) were then fabricated on transparent single-crystal Si membranes with various top Si thicknesses. OLEDs fabricated on 18, 72 and 5000 nm thick membranes and operated at 6 V demonstrated a luminance of 1350, 443 and 27 cd m -2 at the current densities of 148, 131 and 1.5 mA cm -2 , respectively.

Diode readout electronics for beam intensity and position monitors for FELs

International Nuclear Information System (INIS)

Herrmann, S; Hart, P; Freytag, M; Pines, J; Weaver, M; Sapozhnikov, L; Nelson, S; Koglin, J; Carini, G A; Tomada, A; Haller, G

2014-01-01

LCLS uses Intensity-Position Monitors (IPM) to measure intensity and position of the FEL x-ray pulses. The primary beam passes through a silicon nitride film and four diodes, arranged in quadrants, detect the backscattered x-ray photons. The position is derived from the relative intensity of the four diodes, while the sum provides beam intensity information. In contrast to traditional synchrotron beam monitors, where diodes measure a DC current signal, the LCLS beam monitors have to cope with the pulsed nature of the FEL, which requires a large single shot dynamic range. A key component of these beam monitors is the readout electronics. The first generation of beam monitors showed some limitations. A new scheme with upgraded electronics, firmware and software was implemented resulting in a more robust and reliable measuring tool.

Single Photon Avalanche Diodes: Towards the Large Bidimensional Arrays

Directory of Open Access Journals (Sweden)

Emilio Sciacca

2008-08-01

Full Text Available Single photon detection is one of the most challenging goals of photonics. In recent years, the study of ultra-fast and/or low-intensity phenomena has received renewed attention from the academic and industrial communities. Intense research activity has been focused on bio-imaging applications, bio-luminescence, bio-scattering methods, and, more in general, on several applications requiring high speed operation and high timing resolution. In this paper we present design and characterization of bi-dimensional arrays of a next generation of single photon avalanche diodes (SPADs. Single photon sensitivity, dark noise, afterpulsing and timing resolution of the single SPAD have been examined in several experimental conditions. Moreover, the effects arising from their integration and the readout mode have also been deeply investigated.

Modeling of the gain distribution for diode pumping of a solid-state laser rod with nonimaging optics.

Science.gov (United States)

Koshel, R J; Walmsley, I A

1993-03-20

We investigate the absorption distribution in a cylindrical gain medium that is pumped by a source of distributed laser diodes by means of a pump cavity developed from the edge-ray principle of nonimaging optics. The performance of this pumping arrangement is studied by using a nonsequential, numerical, three-dimensional ray-tracing scheme. A figure of merit is defined for the pump cavities that takes into account the coupling efficiency and uniformity of the absorption distribution. It is found that the nonimaging pump cavity maintains a high coupling efficiency with extended two-dimensional diode arrays and obtains a fairly uniform absorption distribution. The nonimaging cavity is compared with two other designs: a close-coupled side-pumped cavity and an imaging design in the form of a elliptical cavity. The nonimaging cavity has a better figure of merit per diode than these two designs. It also permits the use of an extended, sparse, two-dimensional diode array, which reduces thermal loading of the source and eliminates all cavity optics other than the main reflector.

Pulsed-diode-pumped, all-solid-state, electro-optically controlled picosecond Nd:YAG lasers

International Nuclear Information System (INIS)

Gorbunkov, Mikhail V; Shabalin, Yu V; Konyashkin, A V; Kostryukov, P V; Olenin, A N; Tunkin, V G; Morozov, V B; Rusov, V A; Telegin, L S; Yakovlev, D V

2005-01-01

The results of the development of repetitively pulsed, diode-pumped, electro-optically controlled picosecond Nd:YAG lasers of two designs are presented. The first design uses the active-passive mode locking with electro-optical lasing control and semiconductor saturable absorber mirrors (SESAM). This design allows the generation of 15-50-ps pulses with an energy up to 0.5 mJ and a maximum pulse repetition rate of 100 Hz. The laser of the second design generates 30-ps pulses due to combination of positive and negative electro-optical feedback and the control of the electro-optical modulator by the photocurrent of high-speed semiconductor structures. (active media. lasers)

Multi-kW high-brightness fiber coupled diode laser based on two dimensional stacked tailored diode bars

Science.gov (United States)

Bayer, Andreas; Unger, Andreas; Köhler, Bernd; Küster, Matthias; Dürsch, Sascha; Kissel, Heiko; Irwin, David A.; Bodem, Christian; Plappert, Nora; Kersten, Maik; Biesenbach, Jens

2016-03-01

The demand for high brightness fiber coupled diode laser devices in the multi kW power region is mainly driven by industrial applications for materials processing, like brazing, cladding and metal welding, which require a beam quality better than 30 mm x mrad and power levels above 3kW. Reliability, modularity, and cost effectiveness are key factors for success in the market. We have developed a scalable and modular diode laser architecture that fulfills these requirements through use of a simple beam shaping concept based on two dimensional stacking of tailored diode bars mounted on specially designed, tap water cooled heat sinks. The base element of the concept is a tailored diode laser bar with an epitaxial and lateral structure designed such that the desired beam quality in slow-axis direction can be realized without using sophisticated beam shaping optics. The optical design concept is based on fast-axis collimator (FAC) and slow-axis collimator (SAC) lenses followed by only one additional focusing optic for efficient coupling into a 400 μm fiber with a numerical aperture (NA) of 0.12. To fulfill the requirements of scalability and modularity, four tailored bars are populated on a reduced size, tap water cooled heat sink. The diodes on these building blocks are collimated simply via FAC and SAC. The building blocks can be stacked vertically resulting in a two-dimensional diode stack, which enables a compact design of the laser source with minimum beam path length. For a single wavelength, up to eight of these building blocks, implying a total of 32 tailored bars, can be stacked into a submodule, polarization multiplexed, and coupled into a 400 μm, 0.12NA fiber. Scalability into the multi kW region is realized by wavelength combining of replaceable submodules in the spectral range from 900 - 1100 nm. We present results of a laser source based on this architecture with an output power of more than 4 kW and a beam quality of 25 mm x mrad.

Non linear optical studies on semiorganic single crystal: L-arginine 4-nitrophenalate 4-nitrophenol dihydrate (LAPP)

Science.gov (United States)

Mahadevan, M.; Sankar, P. K.; Vinitha, G.; Arivanandhan, M.; Ramachandran, K.; Anandan, P.

2017-07-01

L-arginine 4-nitrophenalate 4-nitrophenol dihydrate (LAPP) has been synthesized and grown by solution growth at room temperature using deionized water as a solvent. The various functional groups of the sample were identified by Fourier transform infra-red and Fourier transforms - Raman spectroscopic analyses. The Laser damage threshold of LAPP has been studied. Refractive index of LAPP single crystal was measured using Metricon prism coupler Instrument. The etching studies were carried out to study the quality of the grown crystals. The third order nonlinear optical properties of LAPP sample was analyzed by the Z-scan technique using 532 nm diode pumped CW Nd: YAG laser. The LAPP material exhibits negative optical nonlinearity. The results show that LAPP sample has potential applications in nonlinear optics and it can be exploited for optical limiting or switching.

Direct diode lasers and their advantages for materials processing and other applications

Science.gov (United States)

Fritsche, Haro; Ferrario, Fabio; Koch, Ralf; Kruschke, Bastian; Pahl, Ulrich; Pflueger, Silke; Grohe, Andreas; Gries, Wolfgang; Eibl, Florian; Kohl, Stefanie; Dobler, Michael

2015-03-01

The brightness of diode lasers is improving continuously and has recently started to approach the level of some solid state lasers. The main technology drivers over the last decade were improvements of the diode laser output power and divergence, enhanced optical stacking techniques and system design, and most recently dense spectral combining. Power densities at the work piece exceed 1 MW/cm2 with commercially available industrial focus optics. These power densities are sufficient for cutting and welding as well as ablation. Single emitter based diode laser systems further offer the advantage of fast current modulation due their lower drive current compared to diode bars. Direct diode lasers may not be able to compete with other technologies as fiber or CO2-lasers in terms of maximum power or beam quality. But diode lasers offer a range of features that are not possible to implement in a classical laser. We present an overview of those features that will make the direct diode laser a very valuable addition in the near future, especially for the materials processing market. As the brightness of diode lasers is constantly improving, BPP of less than 5mm*mrad have been reported with multikW output power. Especially single emitter-based diode lasers further offer the advantage of very fast current modulation due to their low drive current and therefore low drive voltage. State of the art diode drivers are already demonstrated with pulse durations of direct current control allows pulses of several microseconds with hundreds of watts average power. Spot sizes of less than 100 μm are obtained at the work piece. Such a diode system allows materials processing with a pulse parameter range that is hardly addressed by any other laser system. High productivity material ablation with cost effective lasers is enabled. The wide variety of wavelengths, high brightness, fast power modulation and high efficiency of diode lasers results in a strong pull of existing markets, but

High current, high bandwidth laser diode current driver

Science.gov (United States)

Copeland, David J.; Zimmerman, Robert K., Jr.

1991-01-01

A laser diode current driver has been developed for free space laser communications. The driver provides 300 mA peak modulation current and exhibits an optical risetime of less than 400 ps. The current and optical pulses are well behaved and show minimal ringing. The driver is well suited for QPPM modulation at data rates up to 440 Mbit/s. Much previous work has championed current steering circuits; in contrast, the present driver is a single-ended on/off switch. This results in twice the power efficiency as a current steering driver. The driver electrical efficiency for QPPM data is 34 percent. The high speed switch is realized with a Ku-band GaAsFET transistor, with a suitable pre-drive circuit, on a hybrid microcircuit adjacent to the laser diode.

The application of diode laser colorimetry coupled with fiber optic dipping probe for quantitative detection of a protein

International Nuclear Information System (INIS)

Kim, Sung Ho; Yoo, Jong Shin

1996-01-01

The in-situ, simple and inexpensive analysis of protein was achieved by the portable diode laser absorption spectrometry, which consisted of visible diode laser, photodiode, optical fiber and dipping probe. It gives comparable detection limit to the use of conventional UV/Vis spectrometer for the determination of protein by Lowry method.

Towards a versatile active wavelength converter for all-optical networks based on quasi-phase matched intra-cavity difference-frequency generation.

Science.gov (United States)

Torregrosa, Adrián J; Maestre, Haroldo; Capmany, Juan

2013-11-18

The availability of reconfigurable all-optical wavelength converters for an efficient and flexible use of optical resources in WDM (wavelength division multiplexing) networks is still lacking at present. We propose and report preliminary results on a versatile active technique for multiple and tunable wavelength conversions in the 1500-1700 nm spectral region. The technique is based on combining broadband quasi-phase matched intra-cavity parametric single-pass difference-frequency generation close to degeneracy in a diode-pumped tunable laser. A periodically poled stoichiometric lithium tantalate crystal is used as the nonlinear medium, with a parametric pump wave generated in a continuous-wave self-injection locked Cr3+:LiCAF tunable laser operating at around 800 nm.

Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode

Science.gov (United States)

Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.

2018-04-01

The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.

Message-Passing Receivers for Single Carrier Systems with Frequency-Domain Equalization

DEFF Research Database (Denmark)

Zhang, Chuanzong; Manchón, Carles Navarro; Wang, Zhongyong

2015-01-01

In this letter, we design iterative receiver algorithms for joint frequency-domain equalization and decoding in a single carrier system assuming perfect channel state information. Based on an approximate inference framework that combines belief propagation (BP) and the mean field (MF) approximation......, we propose two receiver algorithms with, respectively, parallel and sequential message-passing schedules in the MF part. A recently proposed receiver based on generalized approximate message passing (GAMP) is used as a benchmarking reference. The simulation results show that the BP-MF receiver...

Alternative laser system for cesium magneto-optical trap via optical injection locking to sideband of a 9-GHz current-modulated diode laser.

Science.gov (United States)

Diao, Wenting; He, Jun; Liu, Zhi; Yang, Baodong; Wang, Junmin

2012-03-26

By optical injection of an 852-nm extended-cavity diode laser (master laser) to lock the + 1-order sideband of a ~9-GHz-current-modulated diode laser (slave laser), we generate a pair of phase-locked lasers with a frequency difference up to ~9-GHz for a cesium (Cs) magneto-optical trap (MOT) with convenient tuning capability. For a cesium MOT, the master laser acts as repumping laser, locked to the Cs 6S₁/₂ (F = 3) - 6P₃/₂ (F' = 4) transition. When the + 1-order sideband of the 8.9536-GHz-current-modulated slave laser is optically injection-locked, the carrier operates on the Cs 6S₁/₂ (F = 4) - 6P₃/₂ (F' = 5) cooling cycle transition with -12 MHz detuning and acts as cooling/trapping laser. When carrying a 9.1926-GHz modulation signal, this phase-locked laser system can be applied in the fields of coherent population trapping and coherent manipulation of Cs atomic ground states.

Electrical and Optical Enhancement in Internally Nanopatterned Organic Light-Emitting Diodes

Science.gov (United States)

Fina, Michael Dane

Organic light-emitting diodes (OLEDs) have made tremendous technological progress in the past two decades and have emerged as a top competitor for next generation light-emitting displays and lighting. State-of-the-art OLEDs have been reported in literature to approach, and even surpass, white fluorescent tube efficiency. However, despite rapid technological progress, efficiency metrics must be improved to compete with traditional inorganic light-emitting diode (LED) technology. Organic materials possess specialized traits that permit manipulations to the light-emitting cavity. Overall, as demonstrated within, these modifications can be used to improve electrical and optical device efficiencies. This work is focused at analyzing the effects that nanopatterned geometric modifications to the organic active layers play on device efficiency. In general, OLED efficiency is complicated by the complex, coupled processes which contribute to spontaneous dipole emission. A composite of three sub-systems (electrical, exciton and optical) ultimately dictate the OLED device efficiency. OLED electrical operation is believed to take place via a low-mobility-modified Schottky injection process. In the injection-limited regime, geometric effects are expected to modify the local electric field leading to device current enhancement. It is shown that the patterning effect can be used to enhance charge carrier parity, thereby enhancing overall recombination. Current density and luminance characteristics are shown to be improved by OLED nanopatterning from both the model developed within and experimental techniques. Next, the optical enhancement effects produced by the nanopatterned array are considered. Finite-difference time-domain (FDTD) simulations are used to determine positional, spectral optical enhancement for the nanopatterned device. The results show beneficial effects to the device performance. The optical enhancements are related to the reduction in internal radiative

Method and system for homogenizing diode laser pump arrays

Science.gov (United States)

Bayramian, Andy J

2013-10-01

An optical amplifier system includes a diode pump array including a plurality of semiconductor diode laser bars disposed in an array configuration and characterized by a periodic distance between adjacent semiconductor diode laser bars. The periodic distance is measured in a first direction perpendicular to each of the plurality of semiconductor diode laser bars. The diode pump array provides a pump output propagating along an optical path and characterized by a first intensity profile measured as a function of the first direction and having a variation greater than 10%. The optical amplifier system also includes a diffractive optic disposed along the optical path. The diffractive optic includes a photo-thermo-refractive glass member. The optical amplifier system further includes an amplifier slab having an input face and position along the optical path and separated from the diffractive optic by a predetermined distance. A second intensity profile measured at the input face of the amplifier slab as a function of the first direction has a variation less than 10%.

High-power non linear frequency converted laser diodes

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Andersen, Peter E.; Hansen, Anders Kragh

2015-01-01

We present different methods of generating light in the blue-green spectral range by nonlinear frequency conversion of tapered diode lasers achieving state-of-the-art power levels. In the blue spectral range, we show results using single-pass second harmonic generation (SHG) as well as cavity enh...... enhanced sum frequency generation (SFG) with watt-level output powers. SHG and SFG are also demonstrated in the green spectral range as a viable method to generate up to 4 W output power with high efficiency using different configurations....

Remote online process measurements by a fiber optic diode array spectrometer

International Nuclear Information System (INIS)

Van Hare, D.R.; Prather, W.S.; O'Rourke, P.E.

1986-01-01

The development of remote online monitors for radioactive process streams is an active research area at the Savannah River Laboratory (SRL). A remote offline spectrophotometric measurement system has been developed and used at the Savannah River Plant (SRP) for the past year to determine the plutonium concentration of process solution samples. The system consists of a commercial diode array spectrophotometer modified with fiber optic cables that allow the instrument to be located remotely from the measurement cell. Recently, a fiber optic multiplexer has been developed for this instrument, which allows online monitoring of five locations sequentially. The multiplexer uses a motorized micrometer to drive one of five sets of optical fibers into the optical path of the instrument. A sixth optical fiber is used as an external reference and eliminates the need to flush out process lines to re-reference the spectrophotometer. The fiber optic multiplexer has been installed in a process prototype facility to monitor uranium loading and breakthrough of ion exchange columns. The design of the fiber optic multiplexer is discussed and data from the prototype facility are presented to demonstrate the capabilities of the measurement system

Compact light-emitting diode optical fiber immobilized TiO2 reactor for photocatalytic water treatment.

Science.gov (United States)

O'Neal Tugaoen, Heather; Garcia-Segura, Sergi; Hristovski, Kiril; Westerhoff, Paul

2018-02-01

A key barrier to implementing photocatalysis is delivering light to photocatalysts that are in contact with aqueous pollutants. Slurry photocatalyst systems suffer from poor light penetration and require post-treatment to separate the catalyst. The alternative is to deposit photocatalysts on fixed films and deliver light onto the surface or the backside of the attached catalysts. In this study, TiO 2 -coated quartz optical fibers were coupled to light emitting diodes (OF/LED) to improve in situ light delivery. Design factors and mechanisms studied for OF/LEDs in a flow-through reactor included: (i) the influence of number of LED sources coupled to fibers and (ii) the use of multiple optical fibers bundled to a single LED. The light delivery mechanism from the optical fibers into the TiO 2 coatings is thoroughly discussed. To demonstrate influence of design variables, experiments were conducted in the reactor using the chlorinated pollutant para-chlorobenzoic acid (pCBA). From the degradation kinetics of pCBA, the quantum efficiencies (Φ) of oxidation and electrical energies per order (E EO ) were determined. The use of TiO 2 coated optical fiber bundles reduced the energy requirements to deliver photons and increased available surface area, which improved Φ and enhanced oxidative pollutant removal performance (E EO ). Copyright © 2017 Elsevier B.V. All rights reserved.

High Performance Single Nanowire Tunnel Diodes

DEFF Research Database (Denmark)

Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

NWs were contacted in a NW-FET setup. Electrical measurements at room temperature display typical tunnel diode behavior, with a Peak-to-Valley Current Ratio (PVCR) as high as 8.2 and a peak current density as high as 329 A/cm2. Low temperature measurements show improved PVCR of up to 27.6....... is the tunnel (Esaki) diode, which provides a low-resistance connection between junctions. We demonstrate an InP-GaAs NW axial heterostructure with tunnel diode behavior. InP and GaAs can be readily n- and p-doped, respectively, and the heterointerface is expected to have an advantageous type II band alignment...

Optical Diode Effect at Spin-Wave Excitations of the Room-Temperature Multiferroic BiFeO_{3}.

Science.gov (United States)

Kézsmárki, I; Nagel, U; Bordács, S; Fishman, R S; Lee, J H; Yi, Hee Taek; Cheong, S-W; Rõõm, T

2015-09-18

Multiferroics permit the magnetic control of the electric polarization and the electric control of the magnetization. These static magnetoelectric (ME) effects are of enormous interest: The ability to read and write a magnetic state current-free by an electric voltage would provide a huge technological advantage. Dynamic or optical ME effects are equally interesting, because they give rise to unidirectional light propagation as recently observed in low-temperature multiferroics. This phenomenon, if realized at room temperature, would allow the development of optical diodes which transmit unpolarized light in one, but not in the opposite, direction. Here, we report strong unidirectional transmission in the room-temperature multiferroic BiFeO_{3} over the gigahertz-terahertz frequency range. The supporting theory attributes the observed unidirectional transmission to the spin-current-driven dynamic ME effect. These findings are an important step toward the realization of optical diodes, supplemented by the ability to switch the transmission direction with a magnetic or electric field.

Tests, measurements, and characterization of electro-optic devices and systems

International Nuclear Information System (INIS)

Wadekar, S.G.

1989-01-01

This book contains the proceedings on tests, measurements and characterization of electro-optic devices and systems. Topics covered include: Measurement of spectral dynamics in single-quantum-well lasers, High power computer controlled laser diode characterization tester, and Laser diode characterization instrumentation

Note: Demonstration of an external-cavity diode laser system immune to current and temperature fluctuations.

Science.gov (United States)

Miao, Xinyu; Yin, Longfei; Zhuang, Wei; Luo, Bin; Dang, Anhong; Chen, Jingbiao; Guo, Hong

2011-08-01

We demonstrate an external-cavity laser system using an anti-reflection coated laser diode as gain medium with about 60 nm fluorescence spectrum, and a Rb Faraday anomalous dispersion optical filter (FADOF) as frequency-selecting element with a transmission bandwidth of 1.3 GHz. With 6.4% optical feedback, a single stable longitudinal mode is obtained with a linewidth of 69 kHz. The wavelength of this laser is operating within the center of the highest transmission peak of FADOF over a diode current range from 55 mA to 142 mA and a diode temperature range from 15 °C to 35 °C, thus it is immune to the fluctuations of current and temperature.

Manipulating Ion Migration for Highly Stable Light-Emitting Diodes with Single-Crystalline Organometal Halide Perovskite Microplatelets.

Science.gov (United States)

Chen, Mingming; Shan, Xin; Geske, Thomas; Li, Junqiang; Yu, Zhibin

2017-06-27

Ion migration has been commonly observed as a detrimental phenomenon in organometal halide perovskite semiconductors, causing the measurement hysteresis in solar cells and ultrashort operation lifetimes in light-emitting diodes. In this work, ion migration is utilized for the formation of a p-i-n junction at ambient temperature in single-crystalline organometal halide perovskites. The junction is subsequently stabilized by quenching the ionic movement at a low temperature. Such a strategy of manipulating the ion migration has led to efficient single-crystalline light-emitting diodes that emit 2.3 eV photons starting at 1.8 V and sustain a continuous operation for 54 h at ∼5000 cd m -2 without degradation of brightness. In addition, a whispering-gallery-mode cavity and exciton-exciton interaction in the perovskite microplatelets have both been observed that can be potentially useful for achieving electrically driven laser diodes based on single-crystalline organometal halide perovskite semiconductors.

Silicon MIS diodes with Cr{sub 2}O{sub 3} nanofilm: Optical, morphological/structural and electronic transport properties

Energy Technology Data Exchange (ETDEWEB)

Erdogan, Ibrahim Y. [Bingoel University, Faculty of Sciences and Arts, Department of Chemistry, 12000- Bingoel (Turkey); Guellue, O., E-mail: omergullu@gmail.com [Batman University, Faculty of Sciences and Arts, Department of Physics, 72060- Batman (Turkey)

2010-04-15

In this work we report the optical, morphological and structural characterization and diode application of Cr{sub 2}O{sub 3} nanofilms grown on p-Si substrates by spin coating and annealing process. X-ray diffraction (XRD), non-contact mode atomic force microscopy (NC-AFM), ultraviolet-visible (UV-vis) spectroscopy and photoluminescence (PL) spectroscopy were used for characterization of nanofilms. For Cr{sub 2}O{sub 3} nanofilms, the average particle size determined from XRD and NC-AFM measurements was approximately 70 nm. Structure analyses of nanofilms demonstrate that the single phase Cr{sub 2}O{sub 3} on silicon substrate is of high a crystalline structure with a dominant in hexagonal (1 1 0) orientation. The morphologic analysis of the films indicates that the films formed from hexagonal nanoparticles are with low roughness and uniform. UV-vis absorption measurements indicate that the band gap of the Cr{sub 2}O{sub 3} film is 3.08 eV. The PL measurement shows that the Cr{sub 2}O{sub 3} nanofilm has a strong and narrow ultraviolet emission, which facilitates potential applications in future photoelectric nanodevices. Au/Cr{sub 2}O{sub 3}/p-Si metal/interlayer/semiconductor (MIS) diodes were fabricated for investigation of the electronic properties such as current-voltage and capacitance-voltage. Ideality factor and barrier height for Au//Cr{sub 2}O{sub 3}/p-Si diode were calculated as 2.15 eV and 0.74 eV, respectively. Also, interfacial state properties of the MIS diode were determined. The interface-state density of the MIS diode was found to vary from 2.90 x 10{sup 13} eV{sup -1} cm{sup -2} to 8.45 x 10{sup 12} eV{sup -1} cm{sup -2}.

Optical single sideband modulation radio over fiber system by using a fiber-Bragg-grating-based acousto-optic filter

Science.gov (United States)

Gao, Song; Pei, Li; Li, Zhuoxuan; Liu, Chao; Wang, Yiqun; Weng, Sijun

2013-03-01

An optical single sideband (OSSB) modulation radio over a fiber system, by using an acousto-optic filter (AOF), is proposed and demonstrated. In the AOF, a uniform fiber Bragg grating is etched and modulated by an axially propagating acoustic wave. Due to the acousto-optic superlattice modulation, two secondary reflection peaks, centered on the primary reflection peak, are generated. In the scheme, an optical double-sideband signal passes though the AOF to realize OSSB modulation. Because the reflect depth of the primary peak is much deeper than those of the secondary peaks, the carrier experiences higher attenuation than the upper sideband, which means the carrier-to-sideband ratio (CSR) can be optimized at the same time. We demonstrate this scheme via simulations, and successfully reduce the CSR from 9.73 to 2.9 dB. As a result, the receiving sensitivity improved from -23.43 to -31.18 dBm at BER of 10-9 with 30 km long SMF.

Efficient continuous-wave eye-safe region signal output from intra-cavity singly resonant optical parametric oscillator

International Nuclear Information System (INIS)

Li Bin; Ding Xin; Sheng Quan; Yin Su-Jia; Shi Chun-Peng; Li Xue; Wen Wu-Qi; Yao Jian-Quan; Yu Xuan-Yi

2012-01-01

We report an efficient continuous-wave (CW) tunable intra-cavity singly resonant optical parametric oscillator based on the multi-period periodically poled lithium niobate and using a laser diode (LD) end-pumped CW 1064 nm Nd:YVO 4 laser as the pump source. A highly efficiency CW operation is realized through a careful cavity design for mode matching and thermal stability. The signal tuning range is 1401–1500 nm obtained by varying the domain period. The maximum output power of 2.2 W at 1500 nm is obtained with a 17.1 W 808 nm LD power and the corresponding conversion efficiency is 12.9%. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

Automated alignment of optical components for high-power diode lasers

Science.gov (United States)

Brecher, C.; Pyschny, N.; Haag, S.; Guerrero Lule, V.

2012-03-01

Despite major progress in developing brilliant laser sources a huge potential for cost reductions can be found in simpler setups and automated assembly processes, especially for large volume applications. In this presentation, a concept for flexible automation in optics assembly is presented which is based on standard micro assembly systems with relatively large workspace and modular micromanipulators to enhance the system with additional degrees of freedom and a very high motion resolution. The core component is a compact flexure-based micromanipulator especially designed for the alignment of micro optical components which will be described in detail. The manipulator has been applied in different scenarios to develop and investigate automated alignment processes. This paper focuses on the automated alignment of fast axis collimation (FAC) lenses which is a crucial step during the production of diode lasers. The handling and positioning system, the measuring arrangement for process feedback during active alignment as well as the alignment strategy will be described. The fine alignment of the FAC lens is performed with the micromanipulator under concurrent analysis of the far and the near field intensity distribution. An optimization of the image processing chains for the alignment of a FAC in front of a diode bar led to cycle times of less than 30 seconds. An outlook on other applications and future work regarding the development of automated assembly processes as well as new ideas for flexible assembly systems with desktop robots will close the talk.

All-optical NRZ-to-RZ data format conversion with optically injected laser diode or semiconductor optical amplifier

Science.gov (United States)

Lin, Gong-Ru; Chang, Yung-Cheng; Yu, Kun-Chieh

2006-09-01

By injecting the optical NRZ data into a Fabry-Perot laser diode (FPLD) synchronously modulated at below threshold condition or a semiconductor optical amplifier (SOA) gain-depleted with a backward injected clock stream, the all-optical non-return to zero (NRZ) to return-to-zero (RZ) format conversion of a STM-64 date-stream for synchronous digital hierarchy (SDH) or an OC-192 data stream for synchronous optical network (SONET) in high-speed fiber-optic communication link can be performed. Without the assistance of any complicated RF electronic circuitry, the output RZ data-stream at bit rate of up to 10 Gbit/s is successfully transformed in the optically NRZ injection-locked FPLD, in which the incoming NRZ data induces gain-switching of the FPLD without DC driving current or at below threshold condition. A power penalty of 1.2 dB is measured after NRZ-to-RZ transformation in the FPLD. Alternatively, the all-optical 10Gbits/s NRZ-to-RZ format conversion can also be demonstrated in a semiconductor optical amplifier under a backward dark-optical-comb injection with its duty-cycle 70%, which is obtained by reshaping from the received data clock at 10 GHz. The incoming optical NRZ data-stream is transformed into a pulsed RZ data-stream with its duty-cycle, rms timing jitter, and conversion gain of 15%, 4ps, and 3dB, respectively. In contrast to the FPLD, the SOA based NRZ-to-RZ converter exhibits an enhanced extinction ratio from 7 to 13 dB, and BER of 10 -13 at -18.5 dBm. In particular, the power penalty of the received RZ data-stream has greatly improved by 5 dB as compared to that obtained from FPLD.

The first neural probe integrated with light source (blue laser diode) for optical stimulation and electrical recording.

Science.gov (United States)

Park, HyungDal; Shin, Hyun-Joon; Cho, Il-Joo; Yoon, Eui-sung; Suh, Jun-Kyo Francis; Im, Maesoon; Yoon, Euisik; Kim, Yong-Jun; Kim, Jinseok

2011-01-01

In this paper, we report a neural probe which can selectively stimulate target neurons optically through Si wet etched mirror surface and record extracellular neural signals in iridium oxide tetrodes. Consequently, the proposed approach provides to improve directional problem and achieve at least 150/m gap distance between stimulation and recording sites by wet etched mirror surface in V-groove. Also, we developed light source, blue laser diode (OSRAM Blue Laser Diode_PL 450), integration through simple jig for one-touch butt-coupling. Furthermore, optical power and impedance of iridium oxide tetrodes were measured as 200 μW on 5 mW from LD and 206.5 k Ω at 1 kHz and we demonstrated insertion test of probe in 0.5% agarose-gel successfully. We have successfully transmitted a light of 450 nm to optical fiber through the integrated LD using by butt-coupling method.

High power diode lasers emitting from 639 nm to 690 nm

Science.gov (United States)

Bao, L.; Grimshaw, M.; DeVito, M.; Kanskar, M.; Dong, W.; Guan, X.; Zhang, S.; Patterson, J.; Dickerson, P.; Kennedy, K.; Li, S.; Haden, J.; Martinsen, R.

2014-03-01

There is increasing market demand for high power reliable red lasers for display and cinema applications. Due to the fundamental material system limit at this wavelength range, red diode lasers have lower efficiency and are more temperature sensitive, compared to 790-980 nm diode lasers. In terms of reliability, red lasers are also more sensitive to catastrophic optical mirror damage (COMD) due to the higher photon energy. Thus developing higher power-reliable red lasers is very challenging. This paper will present nLIGHT's released red products from 639 nm to 690nm, with established high performance and long-term reliability. These single emitter diode lasers can work as stand-alone singleemitter units or efficiently integrate into our compact, passively-cooled Pearl™ fiber-coupled module architectures for higher output power and improved reliability. In order to further improve power and reliability, new chip optimizations have been focused on improving epitaxial design/growth, chip configuration/processing and optical facet passivation. Initial optimization has demonstrated promising results for 639 nm diode lasers to be reliably rated at 1.5 W and 690nm diode lasers to be reliably rated at 4.0 W. Accelerated life-test has started and further design optimization are underway.

Nanostructured current-confined single quantum dot light-emitting diode at 1300 nm

NARCIS (Netherlands)

Monat, C.; Alloing, B.; Zinoni, C.; Li, L.; Fiore, A.

2006-01-01

A novel light-emitting-diode structure is demonstrated, which relies on nanoscale current injection through an oxide aperture to achieve selective excitation of single InAs/GaAs quantum dots. Low-temp. electroluminescence spectra evidence discrete narrow lines around 1300 nm (line width ~ 75 micro

Effect of injection current and temperature on signal strength in a laser diode optical feedback interferometer.

Science.gov (United States)

Al Roumy, Jalal; Perchoux, Julien; Lim, Yah Leng; Taimre, Thomas; Rakić, Aleksandar D; Bosch, Thierry

2015-01-10

We present a simple analytical model that describes the injection current and temperature dependence of optical feedback interferometry signal strength for a single-mode laser diode. The model is derived from the Lang and Kobayashi rate equations, and is developed both for signals acquired from the monitoring photodiode (proportional to the variations in optical power) and for those obtained by amplification of the corresponding variations in laser voltage. The model shows that both the photodiode and the voltage signal strengths are dependent on the laser slope efficiency, which itself is a function of the injection current and the temperature. Moreover, the model predicts that the photodiode and voltage signal strengths depend differently on injection current and temperature. This important model prediction was proven experimentally for a near-infrared distributed feedback laser by measuring both types of signals over a wide range of injection currents and temperatures. Therefore, this simple model provides important insight into the radically different biasing strategies required to achieve optimal sensor sensitivity for both interferometric signal acquisition schemes.

Improving the beam quality of high-power laser diodes by introducing lateral periodicity into waveguides

Science.gov (United States)

Sobczak, Grzegorz; DÄ browska, ElŻbieta; Teodorczyk, Marian; Kalbarczyk, Joanna; MalÄ g, Andrzej

2013-01-01

Low quality of the optical beam emitted by high-power laser diodes is the main disadvantage of these devices. The two most important reasons are highly non-Gaussian beam profile with relatively wide divergence in the junction plane and the filamentation effect. Designing laser diode as an array of narrow, close to each other single-mode waveguides is one of the solutions to this problem. In such devices called phase locked arrays (PLA) there is no room for filaments formation. The consequence of optical coupling of many single-mode waveguides is the device emission in the form of few almost diffraction limited beams. Because of losses in regions between active stripes the PLA devices have, however, somewhat higher threshold current and lower slope efficiencies compared to wide-stripe devices of similar geometry. In this work the concept of the high-power laser diode resonator consisted of joined PLA and wide stripe segments is proposed. Resulting changes of electro-optical characteristics of PLA are discussed. The devices are based on the asymmetric heterostructure designed for improvement of the catastrophic optical damage threshold as well as thermal and electrical resistances. Due to reduced distance from the active layer to surface in this heterostructure, better stability of current (and gain) distribution with changing drive level is expected. This could lead to better stability of optical field distribution and supermodes control. The beam divergence reduction in the direction perpendicular of the junction plane has been also achieved.

Single nanowire green InGaN/GaN light emitting diodes

Science.gov (United States)

Zhang, Guogang; Li, Ziyuan; Yuan, Xiaoming; Wang, Fan; Fu, Lan; Zhuang, Zhe; Ren, Fang-Fang; Liu, Bin; Zhang, Rong; Tan, Hark Hoe; Jagadish, Chennupati

2016-10-01

Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

Advancements of ultra-high peak power laser diode arrays

Science.gov (United States)

Crawford, D.; Thiagarajan, P.; Goings, J.; Caliva, B.; Smith, S.; Walker, R.

2018-02-01

Enhancements of laser diode epitaxy in conjunction with process and packaging improvements have led to the availability of 1cm bars capable of over 500W peak power at near-infrared wavelengths (770nm to 1100nm). Advances in cooler design allow for multi-bar stacks with bar-to-bar pitches as low as 350μm and a scalable package architecture enabled a single diode assembly with total peak powers of over 1MegaWatt of peak power. With the addition of micro-optics, overall array brightness greater than 10kW/cm2 was achieved. Performance metrics of barbased diode lasers specifically engineered for high peak power and high brightness at wavelengths and pulse conditions commonly used to pump a variety of fiber and solid-state materials are presented.

Faraday anomalous dispersion optical tuners

Science.gov (United States)

Wanninger, P.; Valdez, E. C.; Shay, T. M.

1992-01-01

Common methods for frequency stabilizing diode lasers systems employ gratings, etalons, optical electric double feedback, atomic resonance, and a Faraday cell with low magnetic field. Our method, the Faraday Anomalous Dispersion Optical Transmitter (FADOT) laser locking, is much simpler than other schemes. The FADOT uses commercial laser diodes with no antireflection coatings, an atomic Faraday cell with a single polarizer, and an output coupler to form a compound cavity. This method is vibration insensitive, thermal expansion effects are minimal, and the system has a frequency pull in range of 443.2 GHz (9A). Our technique is based on the Faraday anomalous dispersion optical filter. This method has potential applications in optical communication, remote sensing, and pumping laser excited optical filters. We present the first theoretical model for the FADOT and compare the calculations to our experimental results.

Solitary pulse-on-demand production by optical injection locking of passively Q-switched InGaN diode laser near lasing threshold

Energy Technology Data Exchange (ETDEWEB)

Zeng, X., E-mail: xi.zeng@csem.ch, E-mail: dmitri.boiko@csem.ch; Stadelmann, T.; Grossmann, S.; Hoogerwerf, A. C.; Boïko, D. L., E-mail: xi.zeng@csem.ch, E-mail: dmitri.boiko@csem.ch [Centre Suisse d' Electronique et de Microtechnique SA (CSEM), CH-2002 Neuchâtel (Switzerland); Sulmoni, L.; Lamy, J.-M.; Grandjean, N. [Institute of Condensed Matter Physics (ICMP), École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne (Switzerland)

2015-02-16

In this letter, we investigate the behavior of a Q-switched InGaN multi-section laser diode (MSLD) under optical injection from a continuous wave external cavity diode laser. We obtain solitary optical pulse generation when the slave MSLD is driven near free running threshold, and the peak output power is significantly enhanced with respect to free running configuration. When the slave laser is driven well above threshold, optical injection reduces the peak power. Using standard semiconductor laser rate equation model, we find that both power enhancement and suppression effects are the result of partial bleaching of the saturable absorber by externally injected photons.

Molecular diodes in optical rectennas

Science.gov (United States)

Duché, David; Palanchoke, Ujwol; Terracciano, Luigi; Dang, Florian-Xuan; Patrone, Lionel; Le Rouzo, Judikael; Balaban, Téodore Silviu; Alfonso, Claude; Charai, Ahmed; Margeat, Olivier; Ackermann, Jorg; Gourgon, Cécile; Simon, Jean-Jacques; Escoubas, Ludovic

2016-09-01

The photo conversion efficiencies of the 1st and 2nd generat ion photovoltaic solar cells are limited by the physical phenomena involved during the photo-conversion processes. An upper limit around 30% has been predicted for a monojunction silicon solar cell. In this work, we study 3rd generation solar cells named rectenna which could direct ly convert visible and infrared light into DC current. The rectenna technology is at odds with the actual photovoltaic technologies, since it is not based on the use of semi-conducting materials. We study a rectenna architecture consist ing of plasmonic nano-antennas associated with rectifying self assembled molecular diodes. We first opt imized the geometry of plasmonic nano-antennas using an FDTD method. The optimal antennas are then realized using a nano-imprint process and associated with self assembled molecular diodes in 11- ferrocenyl-undecanethiol. Finally, The I(V) characterist ics in darkness of the rectennas has been carried out using an STM. The molecular diodes exhibit averaged rect ification ratios of 5.

A 3D Reconstruction Strategy of Vehicle Outline Based on Single-Pass Single-Polarization CSAR Data.

Science.gov (United States)

Leping Chen; Daoxiang An; Xiaotao Huang; Zhimin Zhou

2017-11-01

In the last few years, interest in circular synthetic aperture radar (CSAR) acquisitions has arisen as a consequence of the potential achievement of 3D reconstructions over 360° azimuth angle variation. In real-world scenarios, full 3D reconstructions of arbitrary targets need multi-pass data, which makes the processing complex, money-consuming, and time expending. In this paper, we propose a processing strategy for the 3D reconstruction of vehicle, which can avoid using multi-pass data by introducing a priori information of vehicle's shape. Besides, the proposed strategy just needs the single-pass single-polarization CSAR data to perform vehicle's 3D reconstruction, which makes the processing much more economic and efficient. First, an analysis of the distribution of attributed scattering centers from vehicle facet model is presented. And the analysis results show that a smooth and continuous basic outline of vehicle could be extracted from the peak curve of a noncoherent processing image. Second, the 3D location of vehicle roofline is inferred from layover with empirical insets of the basic outline. At last, the basic line and roofline of the vehicle are used to estimate the vehicle's 3D information and constitute the vehicle's 3D outline. The simulated and measured data processing results prove the correctness and effectiveness of our proposed strategy.

Realization of all-optical switch and diode via Raman gain process using a Kerr field

Science.gov (United States)

Abbas, Muqaddar; Qamar, Sajid; Qamar, Shahid

2016-08-01

The idea of optical photonic crystal, which is generated using two counter-propagating fields, is revisited to study gain-assisted all-optical switch and diode using Kerr field. Two counter-propagating fields with relative detuning Δ ν generate standing-wave field pattern which interacts with a four-level atomic system. The standing-wave field pattern acts like a static photonic crystal for Δ ν =0 , however, it behaves as a moving photonic crystal for Δ ν \

Refractive index gradient diagnostics: analysis of different optical systems and application to COBRA ion diode

Energy Technology Data Exchange (ETDEWEB)

Knyazev, B A; Greenly, J B; Hammer, D A; Krastelev, E G [Cornell Univ., Ithaca, NY (United States). Laboratory of Plasma Studies; Cuneo, M E [Sandia National Laboratories, Albuquerque, NM (United States)

1997-12-31

Different optical system variations for refractive index gradient diagnostics with a laser beam probe have been analyzed. A `three-telescope` optical system which permits simultaneous measurement of both the laser beam centroid deflection by a bi-cell photodiode and the spatial Fourier spectrum of the deflected beam by a streak camera has been implemented on the COBRA ion diode. The dynamics of the anode plasma layer was studied with these techniques. (author). 3 figs., 8 refs.

Electro-optical properties of a polymer light-emitting diode with an injection-limited hole contact

NARCIS (Netherlands)

van Woudenbergh, T; Blom, PWM; Huiberts, JN

2003-01-01

The electro-optical characteristics of a polymer light-emitting diode with a strongly reduced hole injection have been investigated. A silver contact on poly-dialkoxy-p-phenylene vinylene decreases the hole injection by five orders of magnitude, resulting in both a highly reduced light output and

Toward a nanoimprinted nanoantenna to perform optical rectification through molecular diodes

Science.gov (United States)

Reynaud, C. A.; Duché, D.; Ruiz, C. M.; Palanchoke, U.; Patrone, L.; Le Rouzo, J.; Labau, S.; Frolet, N.; Gourgon, C.; Alfonso, C.; Charaï, A.; Lebouin, C.; Simon, J.-J.; Escoubas, L.

2017-12-01

This work presents investigations about the realization and modelization of rectenna solar cells. Rectennas are antennas coupled with a rectifier to convert the alternative current originating from the antenna into direct current that can be harvested and stored. By reducing the size of the antennas to the nanoscale, interactions with visible and near-infrared light become possible. If techniques such as nanoimprint lithography make possible the fabrication of sufficiently small plasmonic structures to act as optical antennas, the concept of rectenna still faces several challenges. One of the most critical point is to achieve rectification at optical frequencies. To address this matter, we propose to use molecular diodes (ferrocenyl-alkanethiol) that can be self-assembled on metallic surfaces such as gold or silver. In this paper, we present a basic rectenna theory as well as finite-difference time-domain (FDTD) optical simulations of plasmonic structures and experimental results of both nanoimprint fabrication of samples and characterizations by electron microscopy, Raman spectroscopy, and cyclic voltammetry techniques.

Use of visible-laser-diode fiber optic sensors in the beverage industry and environmental controls

Science.gov (United States)

Pham, Van Hoi; Chu, Dinh T.; Bui, Huy; Tran, Viet L.

1997-01-01

The fiber-optic refractometer using visible laser diodes with wavelengths of 650 divided by 670 nm for the liquid refractive-index measurement is presented. The refractive- index measures by fiber-optic sensors of the connected configuration for different liquids with refractive indices from 1.33 to 1.5 have given the accuracy of 5.10-3. The fiber-optic refractometer was performanced for the distinguish of the salt or sugar content in the mixtures with range of 10-3 and 5.10-4, respectively. These refractometers are already to use for the sugar control systems of beverage industry and salt-water environment.

Single-pass BPM system of the Photon Factory storage ring.

Science.gov (United States)

Honda, T; Katoh, M; Mitsuhashi, T; Ueda, A; Tadano, M; Kobayashi, Y

1998-05-01

At the 2.5 GeV ring of the Photon Factory, a single-pass beam-position monitor (BPM) system is being prepared for the storage ring and the beam transport line. In the storage ring, the injected beam position during the first several turns can be measured with a single injection pulse. The BPM system has an adequate performance, useful for the commissioning of the new low-emittance lattice. Several stripline BPMs are being installed in the beam transport line. The continuous monitoring of the orbit in the beam transport line will be useful for the stabilization of the injection energy as well as the injection beam orbit.

Highly efficient single-layer dendrimer light-emitting diodes with balanced charge transport

Science.gov (United States)

Anthopoulos, Thomas D.; Markham, Jonathan P. J.; Namdas, Ebinazar B.; Samuel, Ifor D. W.; Lo, Shih-Chun; Burn, Paul L.

2003-06-01

High-efficiency single-layer-solution-processed green light-emitting diodes based on a phosphorescent dendrimer are demonstrated. A peak external quantum efficiency of 10.4% (35 cd/A) was measured for a first generation fac-tris(2-phenylpyridine) iridium cored dendrimer when blended with 4,4'-bis(N-carbazolyl)biphenyl and electron transporting 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene at 8.1 V. A maximum power efficiency of 12.8 lm/W was measured also at 8.1 V and 550 cd/m2. These results indicate that, by simple blending of bipolar and electron-transporting molecules, highly efficient light-emitting diodes can be made employing a very simple device structure.

Power MOSFET-diode-based limiter for high-frequency ultrasound systems.

Science.gov (United States)

Choi, Hojong; Kim, Min Gon; Cummins, Thomas M; Hwang, Jae Youn; Shung, K Kirk

2014-10-01

The purpose of the limiter circuits used in the ultrasound imaging systems is to pass low-voltage echo signals generated by ultrasonic transducers while preventing high-voltage short pulses transmitted by pulsers from damaging front-end circuits. Resistor-diode-based limiters (a 50 Ω resistor with a single cross-coupled diode pair) have been widely used in pulse-echo measurement and imaging system applications due to their low cost and simple architecture. However, resistor-diode-based limiters may not be suited for high-frequency ultrasound transducer applications since they produce large signal conduction losses at higher frequencies. Therefore, we propose a new limiter architecture utilizing power MOSFETs, which we call a power MOSFET-diode-based limiter. The performance of a power MOSFET-diode-based limiter was evaluated with respect to insertion loss (IL), total harmonic distortion (THD), and response time (RT). We compared these results with those of three other conventional limiter designs and showed that the power MOSFET-diode-based limiter offers the lowest IL (-1.33 dB) and fastest RT (0.10 µs) with the lowest suppressed output voltage (3.47 Vp-p) among all the limiters at 70 MHz. A pulse-echo test was performed to determine how the new limiter affected the sensitivity and bandwidth of the transducer. We found that the sensitivity and bandwidth of the transducer were 130% and 129% greater, respectively, when combined with the new power MOSFET-diode-based limiter versus the resistor-diode-based limiter. Therefore, these results demonstrate that the power MOSFET-diode-based limiter is capable of producing lower signal attenuation than the three conventional limiter designs at higher frequency operation. © The Author(s) 2014.

High-brightness tapered laser diodes with photonic crystal structures

Science.gov (United States)

Li, Yi; Du, Weichuan; Kun, Zhou; Gao, Songxin; Ma, Yi; Tang, Chun

2018-02-01

Beam quality of tapered laser diodes is limited by higher order lateral mode. On purpose of optimizing the brightness of tapered laser diodes, we developed a novel design of tapered diodes. This devices based on InGaAs/AlGaAs asymmetry epitaxial structure, containing higher order lateral mode filtering schemes especially photonic crystal structures, which fabricated cost effectively by using standard photolithography and dry etch processes. Meanwhile, the effects of photonic crystal structures on mode control are also investigated theoretically by FDBPM (Finite-Difference Beam Propagation Method) calculation. We achieved a CW optical output power of 6.9W at 940nm for a single emitter with 4 mm cavity length. A nearly diffraction limited beam of M2 ≍1.9 @ 0.5W has been demonstrated, and a highest brightness of β =75MW/(cm2 ·sr) was reached.

Novel microwave photonic fractional hilbert transformer using a ring resonator-based optical all-pass filter

NARCIS (Netherlands)

Zhuang, L.; Khan, M.R.H.; Beeker, Willem; Beeker, W.P.; Leinse, Arne; Heideman, Rene; Roeloffzen, C.G.H.

2012-01-01

We propose and demonstrate a novel wideband microwave photonic fractional Hilbert transformer implemented using a ring resonatorbased optical all-pass filter. The full programmability of the ring resonator allows variable and arbitrary fractional order of the Hilbert transformer. The performance

Double Pass 595?nm pulsed dye laser at a 6 minute interval for the treatment of port-wine stains is not more effective than single pass

NARCIS (Netherlands)

Peters, M. A. D.; van Drooge, A. M.; Wolkerstorfer, A.; van Gemert, M. J. C.; van der Veen, J. P. W.; Bos, J. D.; Beek, J. F.

2012-01-01

Background Pulsed dye laser (PDL) is the first choice for treatment of port wine stains (PWS). However, outcome is highly variable and only a few patients achieve complete clearance. The objective of the study was to compare efficacy and safety of single pass PDL with double pass PDL at a 6 minute

A single-molecule diode

Science.gov (United States)

Elbing, Mark; Ochs, Rolf; Koentopp, Max; Fischer, Matthias; von Hänisch, Carsten; Weigend, Florian; Evers, Ferdinand; Weber, Heiko B.; Mayor, Marcel

2005-06-01

We have designed and synthesized a molecular rod that consists of two weakly coupled electronic π -systems with mutually shifted energy levels. The asymmetry thus implied manifests itself in a current-voltage characteristic with pronounced dependence on the sign of the bias voltage, which makes the molecule a prototype for a molecular diode. The individual molecules were immobilized by sulfur-gold bonds between both electrodes of a mechanically controlled break junction, and their electronic transport properties have been investigated. The results indeed show diode-like current-voltage characteristics. In contrast to that, control experiments with symmetric molecular rods consisting of two identical π -systems did not show significant asymmetries in the transport properties. To investigate the underlying transport mechanism, phenomenological arguments are combined with calculations based on density functional theory. The theoretical analysis suggests that the bias dependence of the polarizability of the molecule feeds back into the current leading to an asymmetric shape of the current-voltage characteristics, similar to the phenomena in a semiconductor diode. Author contributions: F.E., H.B.W., and M.M. designed research; M.E., R.O., M.K., M.F., F.E., H.B.W., and M.M. performed research; M.E., R.O., M.K., M.F., C.v.H., F.W., F.E., H.B.W., and M.M. contributed new reagents/analytic tools; M.E., R.O., M.K., C.v.H., F.E., H.B.W., and M.M. analyzed data; and F.E., H.B.W., and M.M. wrote the paper.This paper was submitted directly (Track II) to the PNAS office.Abbreviations: A, acceptor; D, donor; MCB, mechanically controlled break junction.Data deposition: The atomic coordinates have been deposited in the Cambridge Structural Database, Cambridge Crystallographic Data Centre, Cambridge CB2 1EZ, United Kingdom (CSD reference no. 241632).

Efficient concept generating 3.9 W of diffraction-limited green light with spectrally combined tapered diode lasers

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Hasler, Karl-Heinz

2013-01-01

-optical and nonlinear conversion efficiencies at maximum performance are 5.7 % and 2.6 %/W, respectively. Due to the intrinsic wavelength stabilization of the diodes we achieve single-mode emission with a sidemode suppression

Optical and structural properties of CuO nanofilm: Its diode application

International Nuclear Information System (INIS)

Erdogan, Ibrahim Y.; Guellue, O.

2010-01-01

The high crystalline CuO nanofilms have been prepared by spin coating and annealing combined with a simple chemical method. The obtained films have been characterized by X-ray diffraction (XRD), Fourier transform infrared (FT-IR) spectroscopy, ultraviolet-vis (UV-vis) spectroscopy and photoluminescence (PL) spectroscopy. Structural analysis results demonstrate that the single phase CuO on Si (1 0 0) substrate is of high a crystalline structure with a dominant in monoclinic (1 1 1) orientation. FT-IR results confirm the formation of pure CuO phase. UV-vis absorption measurements indicate that the band gap of the CuO films is 2.64 eV. The PL spectrum of the CuO films shows a broad emission band centered at 467 nm, which is consistent with absorption measurement. Also, Au/CuO/p-Si metal/interlayer/semiconductor (MIS) diodes have been fabricated. Electronic properties (current-voltage) of these structures were investigated. In addition, the interfacial state properties of the MIS diode were obtained. The interface-state density of the MIS diode was found to vary from 6.21 x 10 12 to 1.62 x 10 12 eV -1 cm -2 .

Advancements in high-power high-brightness laser bars and single emitters for pumping and direct diode application

Science.gov (United States)

An, Haiyan; Jiang, Ching-Long J.; Xiong, Yihan; Zhang, Qiang; Inyang, Aloysius; Felder, Jason; Lewin, Alexander; Roff, Robert; Heinemann, Stefan; Schmidt, Berthold; Treusch, Georg

2015-03-01

We have continuously optimized high fill factor bar and packaging design to increase power and efficiency for thin disc laser system pump application. On the other hand, low fill factor bars packaged on the same direct copper bonded (DCB) cooling platform are used to build multi-kilowatt direct diode laser systems. We have also optimized the single emitter designs for fiber laser pump applications. In this paper, we will give an overview of our recent advances in high power high brightness laser bars and single emitters for pumping and direct diode application. We will present 300W bar development results for our next generation thin disk laser pump source. We will also show recent improvements on slow axis beam quality of low fill factor bar and its application on performance improvement of 4-5 kW TruDiode laser system with BPP of 30 mm*mrad from a 600 μm fiber. Performance and reliability results of single emitter for multiemitter fiber laser pump source will be presented as well.

Model for Estimation of Thermal History Produced by a Single Pass Underwater Wet Weld

National Research Council Canada - National Science Library

Dill, Jay

1997-01-01

Thermal history calculations for single pass underwater wet weldments were made by solving the appropriate beat transfer equations using the three-dimensional Crank-Nicholson finite difference method...

Long-term Comparison of a Large Spot Vacuum Assisted Handpiece vs the Small Spot Size Traditional Handpiece of the 800 nm Diode Laser.

Science.gov (United States)

Youssef, Nour J; Rizk, Alain G; Ibrahimi, Omar A; Tannous, Zeina S

2017-09-01

BACKGROUND The 800 nm long-pulsed diode laser machine is safe and effective for permanent hair reduction. Traditionally, most long-pulsed diode lasers used for hair removal had a relatively small spot size. Recently, a long-pulsed diode laser with a large spot size and vacuum assisted suction handpiece was introduced. The treatment parameters of each type of handpiece differ. Short and long-term clinical efficacy, treatment associated pain, and patient satisfaction are important factors to be considered. This study aims to conduct a direct head to head comparison of both handpieces of the 800nm long-pulsed diode laser by evaluating long term hair reduction, treatment associated pain and patient satisfaction. Thirteen subjects were enrolled in this prospective, self-controlled, single-center study of axillary laser hair removal. The study involved 4 treatments using a long pulsed diode laser with a large spot size HS handpiece (single pass), HS handpiece (double pass), and a small spot size ET handpiece according to a randomized choice. The treatment sessions were done at 4-8 week intervals with follow up visits taken at 6 and 12 months after the last treatment session. Hair clearance and thickness analysis were assessed using macro hair count photographs taken at baseline visit, at each treatment session visit and at follow up visits. Other factors including pain, treatment duration, and patients' preference were secondary study endpoints. At 6 months follow up visits after receiving four laser treatments, there was statistically significant hair clearance in the three treatment arms with 66.1 % mean percentage hair reduction with the ET handpiece, 43.6% with the HSS (single pass) and 64.1 % with the HSD (double). However, at one year follow up, the results significantly varied from the 6 months follow up. The mean percentage hair reduction was 57.8% with the ET handpiece treated axillas (n=9), 16.5% with the HSS (single pass) handpiece treated axillas (n=7), and

High-energy, tunable, mid-infrared, picosecond optical parametric generation in CdSiP2

Science.gov (United States)

Chaitanya Kumar, S.; Jelínek, M.; Baudisch, M.; Zawilski, K. T.; Schunemann, P. G.; Kubecek, V.; Biegert, J.; Ebrahim-Zadeh, M.

2012-06-01

We report a tunable, high-energy, single-pass, optical parametric generator (OPG) based on the new nonlinear material, cadmium silicon phosphide, CdSiP2. The OPG is pumped by a laboratory designed cavity-dumped passively mode-locked, diode-pumped, Nd:YAG oscillator, providing 25 μJ pulses in 20 ps at 5 Hz. The pump energy is further boosted by a flashlamp-pumped Nd:YAG amplifier to 2.5 mJ. The OPG is temperature tunable over 1263-1286 nm (23 nm) in the signal and 6153-6731 nm (578 nm) in the idler, corresponding to a total tuning range of 601 nm. Using the single-pass OPG configuration, we have generated signal energy as high as 636 μJ at 1283 nm, together with an idler energy of 33 μJ at 6234 nm, for 2.1 mJ of input pump energy. The signal pulses generated from the OPG have a Gaussian pulse duration of 24 ps and an FWHM spectral bandwidth of 10.4 nm at central wavelength of 1276 nm. The corresponding idler spectrum has an FWHM bandwidth of 140 nm centered at 6404 nm.

Rectifying the Optical-Field-Induced Current in Dielectrics: Petahertz Diode.

Science.gov (United States)

Lee, J D; Yun, Won Seok; Park, Noejung

2016-02-05

Investigating a theoretical model of the optical-field-induced current in dielectrics driven by strong few-cycle laser pulses, we propose an asymmetric conducting of the current by forming a heterojunction made of two distinct dielectrics with a low hole mass (m_{h}^{*}≪m_{e}^{*}) and low electron mass (m_{e}^{*}≪m_{h}^{*}), respectively. This proposition introduces the novel concept of a petahertz (10^{15}  Hz) diode to rectify the current in the petahertz domain, which should be a key ingredient for the electric signal manipulation of future light-wave electronics. Further, we suggest the candidate dielectrics for the heterojunction.

Hermitian symmetry free optical-single-carrier frequency division multiple access for visible light communication

Science.gov (United States)

Azim, Ali W.; Le Guennec, Yannis; Maury, Ghislaine

2018-05-01

Optical-orthogonal frequency division multiplexing (O-OFDM) is an effective scheme for visible light communications (VLC), offering a candid extension to multiple access (MA) scenarios, i.e., O-OFDMA. However, O-OFDMA exhibits high peak-to-average power ratio (PAPR), which exacerbates the non-linear distortions from the light emitting diode (LED). To overcome high PAPR while sustaining MA, optical-single-carrier frequency-division multiple access (O-SCFDMA) is used. For both O-OFDMA and O-SCFDMA, Hermitian symmetry (HS) constraint is imposed in frequency-domain (FD) to obtain a real-valued time-domain (TD) signal for intensity modulation-direct detection (IM-DD) implementation of VLC. Howbeit, HS results in an increase of PAPR for O-SCFDMA. In this regard, we propose HS free (HSF) O-SCFDMA (HSFO-SCFDMA). We compare HSFO-SCFDMA with several approaches in key parameters, such as, bit error rate (BER), optical power penalty, PAPR, quantization, electrical power efficiency and system complexity. BER performance and optical power penalty is evaluated considering multipath VLC channel and taking into account the bandwidth limitation of LED in combination with its optimized driver. It is illustrated that HSFO-SCFDMA outperforms other alternatives.

Programmable current source for diode lasers stabilized optical fiber

International Nuclear Information System (INIS)

Gomez, J.; Camas, J.; Garcia, L.

2012-01-01

In this paper, we present the electronic design of a programmable stabilized current source. User can access to the source through a password, which, it has a database with the current and voltage operating points. This source was successfully used as current source in laser diode in optical fiber sensors. Variations in the laser current were carried out by a monitoring system and a control of the Direct Current (DC), which flowing through a How land source with amplifier. The laser current can be stabilized with an error percent of ± 1 μA from the threshold current (Ith) to its maximum operation current (Imax) in DC mode. The proposed design is reliable, cheap, and its output signal of stabilized current has high quality. (Author)

Full-Duplex Digital Communication on a Single Laser Beam

Science.gov (United States)

Hazzard, D. A.; MacCannell, J. A.; Lee, G.; Selves, E. R.; Moore, D.; Payne, J. A.; Garrett, C. D.; Dahlstrom, N.; Shay, T. M.

2006-01-01

A proposed free-space optical communication system would operate in a full-duplex mode, using a single constant-power laser beam for transmission and reception of binary signals at both ends of the free-space optical path. The system was conceived for two-way data communication between a ground station and a spacecraft in a low orbit around the Earth. It has been estimated that in this application, a data rate of 10 kb/s could be achieved at a ground-station-to-spacecraft distance of 320 km, using a laser power of only 100 mW. The basic system concept is also applicable to terrestrial free-space optical communications. The system (see figure) would include a diode laser at one end of the link (originally, the ground station) and a liquid-crystal- based retroreflecting modulator at the other end of the link (originally, the spacecraft). At the laser end, the beam to be transmitted would be made to pass through a quarter-wave plate, which would convert its linear polarization to right circular polarization. For transmission of data from the laser end to the retroreflector end, the laser beam would be modulated with subcarrier phase-shift keying (SC-PSK). The transmitted beam would then pass through an aperture- sharing element (ASE) - basically, a mirror with a hole in it, used to separate the paths of the transmitted and received light beams. The transmitted beam would continue outward through a telescope (which, in the original application, would be equipped with a spacecraft-tracking system) that would launch the transmitted beam along the free-space optical path to the retroreflector end.

1550 nm superluminescent diode and anti-Stokes effect CCD camera based optical coherence tomography for full-field optical metrology

Science.gov (United States)

Kredzinski, Lukasz; Connelly, Michael J.

2011-06-01

Optical Coherence Tomography (OCT) is a promising non-invasive imaging technology capable of carrying out 3D high-resolution cross-sectional images of the internal microstructure of examined material. However, almost all of these systems are expensive, requiring the use of complex optical setups, expensive light sources and complicated scanning of the sample under test. In addition most of these systems have not taken advantage of the competitively priced optical components available at wavelength within the main optical communications band located in the 1550 nm region. A comparatively simple and inexpensive full-field OCT system (FF-OCT), based on a superluminescent diode (SLD) light source and anti-stokes imaging device was constructed, to perform 3D cross-sectional imaging. This kind of inexpensive setup with moderate resolution could be easily applicable in low-level biomedical and industrial diagnostics. This paper involves calibration of the system and determines its suitability for imaging structures of biological tissues such as teeth, which has low absorption at 1550 nm.

A double-pass interferometer for measurement of dimensional changes

International Nuclear Information System (INIS)

Ren, Dongmei; Lawton, K M; Miller, J A

2008-01-01

A double-pass interferometer was developed for measuring dimensional changes of materials in a nanoscale absolute interferometric dilatometer. This interferometer realized the double-ended measurement of a sample using a single-detection double-pass interference system. The nearly balanced design, in which the measurement beam and the reference beam have equal optical path lengths except for the path difference caused by the sample itself, makes this interferometer have high stability, which is verified by the measurement of a quasi-zero-length sample. The preliminary experiments and uncertainty analysis show that this interferometer should be able to measure dimensional changes with characteristic uncertainty at the nanometer level

Determination of temperature and residual laser energy on film fiber-optic thermal converter for diode laser surgery.

Science.gov (United States)

Liu, Weichao; Kong, Yaqun; Shi, Xiafei; Dong, Xiaoxi; Wang, Hong; Zhao, Jizhi; Li, Yingxin

2017-12-01

The diode laser was utilized in soft tissue incision of oral surgery based on the photothermic effect. The contradiction between the ablation efficiency and the thermal damage has always been in diode laser surgery, due to low absorption of its radiation in the near infrared region by biological tissues. Fiber-optic thermal converters (FOTCs) were used to improve efficiency for diode laser surgery. The purpose of this study was to determine the photothermic effect by the temperature and residual laser energy on film FOTCs. The film FOTC was made by a distal end of optical fiber impacting on paper. The external surface of the converter is covered by a film contained amorphous carbon. The diode laser with 810 nm worked at the different rated power of 1.0 W, 1.5 W, 2.0 W, 3.0 W, 4.0 W, 5.0 W, 6.0 W, 7.0 W, 8.0 W in continuous wave (CW)and pulse mode. The temperature of the distal end of optical fiber was recorded and the power of the residual laser energy from the film FOTC was measured synchronously. The temperature, residual power and the output power were analyzed by linear or exponential regression model and Pearson correlations analysis. The residual power has good linearity versus output power in CW and pulse modes (R 2  = 0.963, P film FOTCs increases exponentially with adjusted R 2  = 0.959 in continuous wave mode, while in pulsed mode with adjusted R 2  = 0.934. The temperature was elevated up to about 210 °C and eventually to be a stable state. Film FOTCs centralized approximately 50% of laser energy on the fiber tip both in CW and pulsed mode while limiting the ability of the laser light to interact directly with target tissue. Film FOTCs can concentrate part of laser energy transferred to heat on distal end of optical fiber, which have the feasibility of improving efficiency and reducing thermal damage of deep tissue.

Optical True Time Delay for Phased Array Antennas Composed of 2×2 Optical MEMS Switches and Fiber Delay Lines

Institute of Scientific and Technical Information of China (English)

Back-Song; Lee; Jong-Dug; Shin; Boo-Gyoun; Kim

2003-01-01

We proposed an optical true time delay (TTD) for phased array antennas (PAAs) composed of 2×2 optical MEMS switches, single-mode fiber delay lines, and a fixed wavelength laser diode. A 3-bit TTD for 10 GHz PAAs was implemented with a time delay error less than ± 0.2 ps.

Comparative analysis of frequency and noise characteristics of Fabry – Perot and distributed feedback laser diodes with external optical injection locking

Energy Technology Data Exchange (ETDEWEB)

Afonenko, A A; Dorogush, E S [Belarusian State University, Minsk (Belarus); Malyshev, S A; Chizh, A L [B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Minsk (Belarus)

2015-11-30

Using a system of coupled travelling wave equations, in the small-signal regime we analyse frequency and noise characteristics of index- or absorption-coupled distributed feedback laser diodes, as well as of Fabry – Perot (FP) laser diodes. It is shown that the weakest dependence of the direct modulation efficiency on the locking frequency in the regime of strong external optical injection locking is exhibited by a FP laser diode formed by highly reflective and antireflective coatings on the end faces of a laser structure. A reduction in the dependence of output characteristics of the laser diode on the locking frequency can be attained by decreasing the reflection coefficient of the antireflective FP mirror. (control of laser radiation parameters)

Continuous-wave singly resonant optical parametric oscillator placed inside a ring laser

DEFF Research Database (Denmark)

Abitan, Haim; Buchhave, Preben

2003-01-01

A cw singly resonant optical parametric oscillator (SRO) was built and placed inside the cavity of a ring laser. The system consists of a diode-end-pumped Nd:YVO4 ring laser with intracavity periodically poled lithium niobate as the nonlinear gain medium of the SRO. When the laser was operated...... in a unidirectional mode, we obtained more than 520 mW of signal power in one beam. When the laser was operated in a bidirectional mode, we obtained 600 mW of signal power (300 mW in two separate beams). The power and the spectral features of the laser in the unidirectional and bidirectional modes were measured while...... the laser was coupled with the SRO. The results show that it is preferable to couple a SRO with a unidirectional ring laser....

Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Films Using Various p-Type Dopants and Their Application to GaN-Based Light-Emitting Diodes.

Science.gov (United States)

Lee, Byeong Ryong; Kim, Tae Geun

2017-01-01

This article reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWCNT) films using various p-type dopants and their application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWCNT films on the light-emitting diodes (LEDs), we increased the work function (Φ) of the films using chemical doping with AuCl₃, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO₃; thereby reduced the Schottky barrier height between the RGO/SWCNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWCNT film doped with MoO₃ exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Film Using Various p-Type Dopants and Its Application to GaN-Based Light-Emitting Diodes.

Science.gov (United States)

Lee, Byeong Ryong; Kim, Tae Geun

2016-06-01

This paper reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWNT) films using various p-type dopants and its application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWNT films on the light-emitting diodes (LEDs), we increased the work function (φ) of the films using chemical doping with AuCl3, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) ( PSS) and MoO3; thereby reduced the Schottky barrier height between the RGO/SWNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

Cavity-enhanced resonant photoacoustic spectroscopy with optical feedback cw diode lasers: A novel technique for ultratrace gas analysis and high-resolution spectroscopy.

Science.gov (United States)

Hippler, Michael; Mohr, Christian; Keen, Katherine A; McNaghten, Edward D

2010-07-28

Cavity-enhanced resonant photoacoustic spectroscopy with optical feedback cw diode lasers (OF-CERPAS) is introduced as a novel technique for ultratrace gas analysis and high-resolution spectroscopy. In the scheme, a single-mode cw diode laser (3 mW, 635 nm) is coupled into a high-finesse linear cavity and stabilized to the cavity by optical feedback. Inside the cavity, a build-up of laser power to at least 2.5 W occurs. Absorbing gas phase species inside the cavity are detected with high sensitivity by the photoacoustic effect using a microphone embedded in the cavity. To increase sensitivity further, coupling into the cavity is modulated at a frequency corresponding to a longitudinal resonance of an organ pipe acoustic resonator (f=1.35 kHz and Q approximately 10). The technique has been characterized by measuring very weak water overtone transitions near 635 nm. Normalized noise-equivalent absorption coefficients are determined as alpha approximately 4.4x10(-9) cm(-1) s(1/2) (1 s integration time) and 2.6x10(-11) cm(-1) s(1/2) W (1 s integration time and 1 W laser power). These sensitivities compare favorably with existing state-of-the-art techniques. As an advantage, OF-CERPAS is a "zero-background" method which increases selectivity and sensitivity, and its sensitivity scales with laser power.

Disruptive laser diode source for embedded LIDAR sensors

Science.gov (United States)

Canal, Celine; Laugustin, Arnaud; Kohl, Andreas; Rabot, Olivier

2017-02-01

Active imaging based on laser illumination is used in various fields such as medicine, security, defense, civil engineering and in the automotive sector. In this last domain, research and development to bring autonomous vehicles on the roads has been intensified these last years with an emphasis on lidar technology that is probably the key to achieve full automation level. Based on time-of-flight measurements, the profile of objects can be measured together with their location in various conditions, creating a 3D mapping of the environment. To be embedded on a vehicle as advanced driver assistance systems (ADAS), these sensors require compactness, low-cost and reliability, as it is provided by a flash lidar. An attractive candidate, especially with respect to cost reduction, for the laser source integrated in these devices is certainly laser diodes as long as they can provide sufficiently short pulses with a high energy. A recent breakthrough in laser diode and diode driver technology made by Quantel (Les Ulis, France) now allows laser emission higher than 1 mJ with pulses as short as 12 ns in a footprint of 4x5 cm2 (including both the laser diode and driver) and an electrical-to-optical conversion efficiency of the whole laser diode source higher than 25% at this level of energy. The components used for the laser source presented here can all be manufactured at low cost. In particular, instead of having several individual laser diodes positioned side by side, the laser diodes are monolithically integrated on a single semiconductor chip. The chips are then integrated directly on the driver board in a single assembly step. These laser sources emit in the range of 800-1000 nm and their emission is considered to be eye safe when taking into account the high divergence of the output beam and the aperture of possible macro lenses so that they can be used for end consumer applications. Experimental characterization of these state-of-the-art pulsed laser diode sources

Physicochemical properties of bio-oil and biochar produced by fast pyrolysis of stored single-pass corn stover and cobs.

Science.gov (United States)

Shah, Ajay; Darr, Matthew J; Dalluge, Dustin; Medic, Dorde; Webster, Keith; Brown, Robert C

2012-12-01

Short harvest window of corn (Zea mays) stover necessitates its storage before utilization; however, there is not enough work towards exploring the fast pyrolysis behavior of stored biomass. This study investigated the yields and the physicochemical properties (proximate and ultimate analyses, higher heating values and acidity) of the fast pyrolysis products obtained from single-pass stover and cobs stored either inside a metal building or anaerobically within plastic wraps. Biomass samples were pyrolyzed in a 183 cm long and 2.1cm inner diameter free-fall fast pyrolysis reactor. Yields of bio-oil, biochar and non-condensable gases from different biomass samples were in the ranges of 45-55, 25-37 and 11-17 wt.%, respectively, with the highest bio-oil yield from the ensiled single-pass stover. Bio-oils generated from ensiled single-pass cobs and ensiled single-pass stover were, respectively, the most and the least acidic with the modified acid numbers of 95.0 and 65.2 mg g(-1), respectively. Copyright © 2012 Elsevier Ltd. All rights reserved.

Topical perfluorodecalin resolves immediate whitening reactions and allows rapid effective multiple pass treatment of tattoos.

Science.gov (United States)

Reddy, Kavitha K; Brauer, Jeremy A; Anolik, Robert; Bernstein, Leonard; Brightman, Lori; Hale, Elizabeth; Karen, Julie; Weiss, Elliot; Geronemus, Roy G

2013-02-01

Laser tattoo removal using multiple passes per session, with each pass delivered after spontaneous resolution of whitening, improves tattoo fading in a 60-minute treatment time. Our objective was to evaluate the safety and efficacy of topical perfluorodecalin (PFD) in facilitating rapid effective multiple-pass tattoo removal. In a randomized, controlled study using Q-switched ruby or Nd:YAG laser, 22 previously treated tattoos were treated with 3 passes using PFD to resolve whitening after each pass ("R0 method"). In previously untreated symmetric tattoos, seven were treated over half of the tattoo with the R20 method, and the opposite half with 4 passes using PFD (R0 method); two were treated over half with a single pass and the opposite half with 4 passes using PFD (R0 method); and six treated over half with a single pass followed by PFD and the opposite half with a single pass alone. Blinded dermatologists rated tattoo fading at 1-3 months. Optical coherence tomography (OCT) imaging of whitening was performed in two tattoos. Topical PFD clinically resolved immediate whitening reactions within a mean 5 seconds (range 3-10 seconds). Tattoos treated with the R0 method demonstrated excellent fading in an average total treatment time of 5 minutes. Tattoo areas treated with the R0 method demonstrated equal fading compared to the R20 method, and improved fading compared to a single pass method. OCT imaging of whitening demonstrated epidermal and dermal hyper-reflective "bubbles" that dissipated until absent at 9-10 minutes after PFD application, and at 20 minutes without intervention. Multiple-pass tattoo removal using PFD to deliver rapid sequential passes (R0 method) appears equally effective as the R20 method, in a total treatment time averaging 5 minutes, and more effective than single pass treatment. OCT-visualized whitening-associated "bubbles," upon treatment with PFD, resolve twice as rapidly as spontaneous resolution. Copyright © 2012 Wiley

Investigation of Self-injection Locked Visible Laser Diodes for High Bit-rate Visible Light Communication

KAUST Repository

Shamim, Md. Hosne Mobarok; Shemis, Mohamed; Shen, Chao; Oubei, Hassan M.; Ng, Tien Khee; Ooi, Boon S.; Khan, Mohammed Zahed Mustafa

2018-01-01

-mode-suppression-ratio was considerably increased in all the cases, reaching as high as ~20 dB in self-injection locked blue laser diode, thus enabling a close to single mode operation. This work paves the way for attaining high speed optical wireless communications by overcoming

Fiber optics: A brief introduction

International Nuclear Information System (INIS)

Gruchalla, M.E.

1989-01-01

A basic introduction into the principles of fiber optics is presented. A review of both the underlying physical principles and the individual elements of typical fiber-optic systems are presented. The optical phenomenon of total internal reflection is reviewed. The basic construction of the optical fiber is presented. Both step-index and graded-index fiber designs are reviewed. Multimode and single-mode fiber constructions are considered and typical performance parameters given. Typical optical-fiber bandwidth and loss characteristics are compared to various common coaxial cables, waveguides, and air transmission. The constructions of optical-fiber cables are reviewed. Both loose-tube and tightly-buffered designs are considered. Several optical connection approaches are presented. Photographs of several representative optical connectors are included. Light Emitting Diode and Laser Diode emitters for fiber-optic applications are reviewed, and some advantages and shortcomings of each are considered. The phenomenon of modal noise is briefly explained. Both PIN and Avalanche photodetectors are reviewed and their performance parameters compared. Methods of data transmission over optical fiber are introduced. Principles of Wavelength, Frequency, and Time Division Multiplexing are briefly presented. The technology of fiber-optic sensors is briefly reviewed with basic principles introduced. The performance of a fiber-optic strain sensor is included as a practical example. 7 refs., 10 figs

Narrow linewidth operation of a spectral beam combined diode laser bar.

Science.gov (United States)

Zhu, Zhanda; Jiang, Menghua; Cheng, Siqi; Hui, Yongling; Lei, Hong; Li, Qiang

2016-04-20

Our experiment is expected to provide an approach for realizing ultranarrow linewidth for a spectral beam combined diode laser bar. The beams of a diode laser bar are combined in a fast axis after a beam transformation system. With the help of relay optics and a transform lens with a long focal length of 1.5 m, the whole wavelength of a spectral combined laser bar can be narrowed down to 0.48 nm from more than 10 nm. We have achieved 56.7 W cw from a 19-element single bar with an M2 of 1.4  (in horizontal direction)×11.6  (in vertical direction). These parameters are good evidence that all the beams from the diode laser bar are combined together to increase the brightness.

330 mJ single-frequency Ho:YLF slab amplifier

CSIR Research Space (South Africa)

Strauss, HJ

2013-04-01

Full Text Available We report on a double-pass Ho:YLF slab amplifier which delivered 350 ns long single-frequency pulses of up to 330 mJ at 2064 nm, with a maximum M(sup2) of 1.5 at 50 Hz. It was end pumped with a diode-pumped Tm:YLF slab laser and seeded with up to 50...

Single-mode optical fibres

CERN Document Server

Cancellieri, G

1991-01-01

This book describes signal propagation in single-mode optical fibres for telecommunication applications. Such description is based on the analysis of field propagation, considering waveguide properties and also some of the particular characteristics of the material fibre. The book covers such recent advances as, coherent transmissions; optical amplification; MIR fibres; polarization maintaining; polarization diversity and photon counting.

Electromagnetic wave analogue of an electronic diode

International Nuclear Information System (INIS)

Shadrivov, Ilya V; Powell, David A; Kivshar, Yuri S; Fedotov, Vassili A; Zheludev, Nikolay I

2011-01-01

An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of rotation of the polarization state and is also a key component in optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by an extraordinarily strong nonlinear wave propagation effect in the same way as the electronic diode function is provided by the nonlinear current characteristic of a semiconductor junction. The effect exploited in this new electromagnetic diode is an intensity-dependent polarization change in an artificial chiral metamolecule. This microwave effect exceeds a similar optical effect previously observed in natural crystals by more than 12 orders of magnitude and a direction-dependent transmission that differs by a factor of 65.

Feedback effects in optical communication systems: characteristic curve for single-mode InGaAsP lasers.

Science.gov (United States)

Brivio, F; Reverdito, C; Sacchi, G; Chiaretti, G; Milani, M

1992-08-20

An experimental analysis of InGaAsP injection lasers shows an unexpected decrease of the differential quantum efficiency as a function of injected current when optical power is fed back into the active cavity of a diode inserted into a long transmission line. To investigate the response of laser diodes to optical feedback, we base our analysis on a microscopic model, resulting in a set of coupled equations that include the microscopic parameters that characterize the material and the device. This description takes into account the nonlinear dependence of the interband carrier lifetime on the level of optical feedback. Good agreement between the analytical description and experimental data is obtained for threshold current and differential quantum efficiency as functions of the feedback ratio.

Optical Cutting Interruption Sensor for Fiber Lasers

Directory of Open Access Journals (Sweden)

Benedikt Adelmann

2015-09-01

Full Text Available We report on an optical sensor system attached to a 4 kW fiber laser cutting machine to detect cutting interruptions. The sensor records the thermal radiation from the process zone with a modified ring mirror and optical filter arrangement, which is placed between the cutting head and the collimator. The process radiation is sensed by a Si and InGaAs diode combination with the detected signals being digitalized with 20 kHz. To demonstrate the function of the sensor, signals arising during fusion cutting of 1 mm stainless steel and mild steel with and without cutting interruptions are evaluated and typical signatures derived. In the recorded signals the piercing process, the laser switch on and switch off point and waiting period are clearly resolved. To identify the cutting interruption, the signals of both Si and InGaAs diodes are high pass filtered and the signal fluctuation ranges being subsequently calculated. Introducing a correction factor, we identify that only in case of a cutting interruption the fluctuation range of the Si diode exceeds the InGaAs diode. This characteristic signature was successfully used to detect 80 cutting interruptions of 83 incomplete cuts (alpha error 3.6% and system recorded no cutting interruption from 110 faultless cuts (beta error of 0. This particularly high detection rate in combination with the easy integration of the sensor, highlight its potential for cutting interruption detection in industrial applications.

Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

Energy Technology Data Exchange (ETDEWEB)

Hamad, H.; Raynaud, C.; Bevilacqua, P.; Tournier, D.; Planson, D. [Ampère Laboratory - UMR 5005, 21, Avenue Jean Capelle, 69621 Villeurbanne Cedex (France); Vergne, B. [Franco-Allemand Institute of Saint-Louis ISL, 5, Rue du Général Cassagnou, 68300 Saint-Louis (France)

2014-02-24

Using a pulsed green laser with a wavelength of 532 nm, a duration pulse of ∼1 ns, and a mean power varying between 1 and 100 mW, induced photocurrents have been measured in 4H-SiC bipolar diodes. Considering the photon energy (2.33 eV) and the bandgap of 4H-SiC (3.2 eV), the generation of electron-hole pair by the conventional single photon absorption process should be negligible. The intensity of the measured photocurrents depends quadratically on the power beam intensity. This clearly shows that they are generated using two-photon absorption process. As in conventional OBIC (Optical Beam Induced Current), the measurements give an image of the electric field distribution in the structure under test, and the minority carrier lifetime can be extracted from the decrease of the photocurrent at the edge of the structure. The extracted minority carrier lifetime of 210 ns is consistent with results obtained in case of single photon absorption.

Optical beam induced current measurements based on two-photon absorption process in 4H-SiC bipolar diodes

International Nuclear Information System (INIS)

Hamad, H.; Raynaud, C.; Bevilacqua, P.; Tournier, D.; Planson, D.; Vergne, B.

2014-01-01

Using a pulsed green laser with a wavelength of 532 nm, a duration pulse of ∼1 ns, and a mean power varying between 1 and 100 mW, induced photocurrents have been measured in 4H-SiC bipolar diodes. Considering the photon energy (2.33 eV) and the bandgap of 4H-SiC (3.2 eV), the generation of electron-hole pair by the conventional single photon absorption process should be negligible. The intensity of the measured photocurrents depends quadratically on the power beam intensity. This clearly shows that they are generated using two-photon absorption process. As in conventional OBIC (Optical Beam Induced Current), the measurements give an image of the electric field distribution in the structure under test, and the minority carrier lifetime can be extracted from the decrease of the photocurrent at the edge of the structure. The extracted minority carrier lifetime of 210 ns is consistent with results obtained in case of single photon absorption

Optical design of adjustable light emitting diode for different lighting requirements

International Nuclear Information System (INIS)

Lu Jia-Ning; Yu Jie; Tong Yu-Zhen; Zhang Guo-Yi

2012-01-01

Light emitting diode (LED) sources have been widely used for illumination. Optical design, especially freedom compact lens design is necessary to make LED sources applied in lighting industry, such as large-range interior lighting and small-range condensed lighting. For different lighting requirements, the size of target planes should be variable. In our paper we provide a method to design freedom lens according to the energy conservation law and Snell law through establishing energy mapping between the luminous flux emitted by a Lambertian LED source and a certain area of the target plane. The algorithm of our design can easily change the radius of each circular target plane, which makes the size of the target plane adjustable. Ray-tracing software Tracepro is used to validate the illuminance maps and polar-distribution maps. We design lenses for different sizes of target planes to meet specific lighting requirements. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

13CO2/12CO2 isotope ratio analysis in human breath using a 2 μm diode laser

Science.gov (United States)

Sun, Mingguo; Cao, Zhensong; Liu, Kun; Wang, Guishi; Tan, Tu; Gao, Xiaoming; Chen, Weidong; Yinbo, Huang; Ruizhong, Rao

2015-04-01

The bacterium H. pylori is believed to cause peptic ulcer. H. pylori infection in the human stomach can be diagnosed through a CO2 isotope ratio measure in exhaled breath. A laser spectrometer based on a distributed-feedback semiconductor diode laser at 2 μm is developed to measure the changes of 13CO2/12CO2 isotope ratio in exhaled breath sample with the CO2 concentration of ~4%. It is characterized by a simplified optical layout, in which a single detector and associated electronics are used to probe CO2 spectrum. A new type multi-passes cell with 12 cm long base length , 29 m optical path length in total and 280 cm3 volume is used in this work. The temperature and pressure are well controlled at 301.15 K and 6.66 kPa with fluctuation amplitude of 25 mK and 6.7 Pa, respectively. The best 13δ precision of 0.06o was achieved by using wavelet denoising and Kalman filter. The application of denoising and Kalman filter not only improved the signal to noise ratio, but also shorten the system response time.

Power blue and green laser diodes and their applications

Science.gov (United States)

Hager, Thomas; Strauß, Uwe; Eichler, Christoph; Vierheilig, Clemens; Tautz, Sönke; Brüderl, Georg; Stojetz, Bernhard; Wurm, Teresa; Avramescu, Adrian; Somers, André; Ristic, Jelena; Gerhard, Sven; Lell, Alfred; Morgott, Stefan; Mehl, Oliver

2013-03-01

InGaN based green laser diodes with output powers up to 50mW are now well established for variety of applications ranging from leveling to special lighting effects and mobile projection of 12lm brightness. In future the highest market potential for visible single mode profile lasers might be laser projection of 20lm. Therefore direct green single-mode laser diodes with higher power are required. We found that self heating was the limiting factor for higher current operation. We present power-current characteristics of improved R and D samples with up to 200mW in cw-operation. An optical output power of 100mW is reached at 215mA, a current level which is suitable for long term operation. Blue InGaN laser diodes are also the ideal source for phosphor based generation of green light sources of high luminance. We present a light engine based on LARP (Laser Activated Remote Phosphor) which can be used in business projectors of several thousand lumens on screen. We discuss the advantages of a laser based systems in comparison with LED light engines. LARP requires highly efficient blue power laser diodes with output power above 1W. Future market penetration of LARP will require lower costs. Therefore we studied new designs for higher powers levels. R and D chips with power-current characteristics up to 4W in continuous wave operation on C-mount at 25°C are presented.

Estimation of Most Favorable Optical Window Position Subject to Achieve Finest Optical Control of Lateral DDR IMPATT Diode Designed to Operate at W-Band

Directory of Open Access Journals (Sweden)

A. Acharyya

2014-06-01

Full Text Available The optimum position of the optical window (OW of illuminated lateral double-drift region (DDR impact avalanche transit time (IMPATT device has been determined subject to achieve the finest optical control of both DC and RF properties of the device. The OW is a tiny hole that has to be created on the oxide layer through which the light energy of appropriate wavelength can be coupled to the space charge region of the device. A non-sinusoidal voltage is assumed to be applied across the diode and the corresponding terminal current response is obtained from a two-dimensional (2-D large-signal (L-S simulation technique developed by the authors for illuminated lateral DDR IMPATT diode. Both the DC and L-S properties of the illuminated device based on Si, designed to operate at W-band frequencies (75 – 110 GHz are obtained from the said L-S simulation. Simulation is carried out for different incident optical power levels of different wavelengths (600 – 1000 nm by varying the position of the fixed sized OW on the oxide layer along the direction of electrical conduction of the device. Results show that, the most favorable optical tuning can be achieved when the OW is entirely created over the p-type depletion layer, i.e. when the photocurrent is purely electron dominated. Also the 700 nm wavelength is found to be most suitable wavelength for obtaining the maximum optical modulation of both DC and RF properties of the device.

Visible high power fiber coupled diode lasers

Science.gov (United States)

Köhler, Bernd; Drovs, Simon; Stoiber, Michael; Dürsch, Sascha; Kissel, Heiko; Könning, Tobias; Biesenbach, Jens; König, Harald; Lell, Alfred; Stojetz, Bernhard; Löffler, Andreas; Strauß, Uwe

2018-02-01

In this paper we report on further development of fiber coupled high-power diode lasers in the visible spectral range. New visible laser modules presented in this paper include the use of multi single emitter arrays @ 450 nm leading to a 120 W fiber coupled unit with a beam quality of 44 mm x mrad, as well as very compact modules with multi-W output power from 405 nm to 640 nm. However, as these lasers are based on single emitters, power scaling quickly leads to bulky laser units with a lot of optical components to be aligned. We also report on a new approach based on 450 nm diode laser bars, which dramatically reduces size and alignment effort. These activities were performed within the German government-funded project "BlauLas": a maximum output power of 80 W per bar has been demonstrated @ 450 nm. We show results of a 200 μm NA0.22 fiber coupled 35 W source @ 450 nm, which has been reduced in size by a factor of 25 compared to standard single emitter approach. In addition, we will present a 200 μm NA0.22 fiber coupled laser unit with an output power of 135 W.

Silicon photon-counting avalanche diodes for single-molecule fluorescence spectroscopy

Science.gov (United States)

Michalet, Xavier; Ingargiola, Antonino; Colyer, Ryan A.; Scalia, Giuseppe; Weiss, Shimon; Maccagnani, Piera; Gulinatti, Angelo; Rech, Ivan; Ghioni, Massimo

2014-01-01

Solution-based single-molecule fluorescence spectroscopy is a powerful experimental tool with applications in cell biology, biochemistry and biophysics. The basic feature of this technique is to excite and collect light from a very small volume and work in a low concentration regime resulting in rare burst-like events corresponding to the transit of a single molecule. Detecting photon bursts is a challenging task: the small number of emitted photons in each burst calls for high detector sensitivity. Bursts are very brief, requiring detectors with fast response time and capable of sustaining high count rates. Finally, many bursts need to be accumulated to achieve proper statistical accuracy, resulting in long measurement time unless parallelization strategies are implemented to speed up data acquisition. In this paper we will show that silicon single-photon avalanche diodes (SPADs) best meet the needs of single-molecule detection. We will review the key SPAD parameters and highlight the issues to be addressed in their design, fabrication and operation. After surveying the state-of-the-art SPAD technologies, we will describe our recent progress towards increasing the throughput of single-molecule fluorescence spectroscopy in solution using parallel arrays of SPADs. The potential of this approach is illustrated with single-molecule Förster resonance energy transfer measurements. PMID:25309114

Evaluation of regional pulmonary blood flow in mitral valvular heart disease using single-pass radionuclide angiocardiography

International Nuclear Information System (INIS)

Chang-Soon Koh; Byung Tae Kim; Myung Chul Lee; Bo Yeon Cho

1982-01-01

Pulmonary hypertension in mitral valvular cardiac disease has been evaluated in 122 patients by a modified upper lung/lower count ratio using single-pass radionuclide angiocardiography. The mean upper lung/lower lung radio correlates well with pulmonary artery mean (r=0.483) and wedge pressure (r=0.804). After correction surgery of the cardiac valve, the ratio decreases and returns to normal range in patients judged clinically to have good surgical benifit. This modified method using single-pass technique provides additional simple, reproducible and nontraumatic results of regional pulmonary blood flow and appears to be correlated with the degree of pulmonary hypertension in mitral heart disease

Analogy between optically driven injection-locked laser diodes and driven damped linear oscillators

International Nuclear Information System (INIS)

Murakami, Atsushi; Shore, K. Alan

2006-01-01

An analytical study of optically driven laser diodes (LDs) has been undertaken to meet the requirement for a theoretical treatment for chaotic drive and synchronization occurring in the injection-locked LDs with strong injection. A small-signal analysis is performed for the sets of rate equations for the injection-locked LDs driven by a sinusoidal optical signal. In particular, as a model of chaotic driving signals from LD dynamics, an optical signal caused by direct modulation to the master LD is assumed, oscillating both in field amplitude and phase as is the case with chaotic driving signals. Consequently, we find conditions that allow reduction in the degrees of freedom of the driven LD. Under these conditions, the driven response is approximated to a simple form which is found to be equivalent to driven damped linear oscillators. The validity of the application of this theory to previous work on the synchronization of chaos and related phenomena occurring in the injection-locked LDs is demonstrated

Internal optical losses in very thin CW heterojunction laser diodes

Science.gov (United States)

Butler, J. K.; Kressel, H.; Ladany, I.

1975-01-01

Theoretical calculations are presented showing the relationship between the internal laser absorption and structural parameters appropriate for CW room-temperature lasers. These diodes have submicron-thick recombination regions, and very small spacings between the heat sink and the recombination region to minimize the thermal resistance. The optical loss is shown to be strongly dependent on the degree of radiation confinement to the active region. In particular, absorption in the surface GaAs layer providing the ohmic contact becomes very significant when the intermediate (AlGa)As layer is reduced below about 1 micron. It is further shown that excessive penetration into the GaAs regions gives rise to anomalies in the far-field radiation profiles in the direction perpendicular to the junction plane.

Quantum dot resonant tunneling diode single photon detector with aluminum oxide aperture defined tunneling area

DEFF Research Database (Denmark)

Li, H.W.; Kardynal, Beata; Ellis, D.J.P.

2008-01-01

Quantum dot resonant tunneling diode single photon detector with independently defined absorption and sensing areas is demonstrated. The device, in which the tunneling is constricted to an aperture in an insulating layer in the emitter, shows electrical characteristics typical of high quality res...

Investigation of a diode-pumped intracavity optical parametric oscillator in pulsed and continuous wave operation

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Skettrup, Torben; Balle-Petersen, O.

2001-01-01

Summary form only given. CW and pulsed compact tunable laser sources in the infrared have widespread scientific, medical and industrial applications. Such a laser source can be obtained by use of a diode-pumped intracavity optical parametric oscillator (IOPO). We report on a IOPO based on a Yb......:YAG laser incorporating a periodically poled LiNbO3 (PPLN) crystal inside the laser cavity to take advantage of the high circulating intracavity field. The Yb:YAG crystal is pumped by a reliable 940 nm fibre-coupled diode laser. The IOPO consists of a Yb:YAG crystal coated for HR at 1030 nm, an intracavity...... lens to generate a beam waist in the PPLN crystal, a dichroic mirror to separate the laser and signal fields and two end mirrors...

Electromagnetic wave analogue of electronic diode

OpenAIRE

Shadrivov, Ilya V.; Powell, David A.; Kivshar, Yuri S.; Fedotov, Vassili A.; Zheludev, Nikolay I.

2010-01-01

An electronic diode is a nonlinear semiconductor circuit component that allows conduction of electrical current in one direction only. A component with similar functionality for electromagnetic waves, an electromagnetic isolator, is based on the Faraday effect of the polarization state rotation and is also a key component of optical and microwave systems. Here we demonstrate a chiral electromagnetic diode, which is a direct analogue of an electronic diode: its functionality is underpinned by ...

TCAD simulations for a novel single-photon avalanche diode

Science.gov (United States)

Jin, Xiangliang; Yang, Jia; Yang, Hongjiao; Tang, Lizhen; Liu, Weihui

2015-03-01

A single-photon avalanche diode (SPAD) device with P+-SEN junction, and a low concentration of N-type doping circular virtual guard-ring was presented in this paper. SEN layer of the proposed SPAD has high concentration of N-type doping, causing the SPAD low breakdown voltage (~14.26 V). What's more, an efficient and narrow (about 2μm) guard-ring of the proposed SPAD not only can withstand considerably higher electric fields for preventing edge breakdown, but also offers a little increment in fill factor compared with existing SPADs due to its small area. In addition, some Silvaco TCAD simulations have been done and verify characteristics and performance of the design in this work.

980 nm high brightness external cavity broad area diode laser bar

DEFF Research Database (Denmark)

Vijayakumar, Deepak; Jensen, Ole Bjarlin; Thestrup Nielsen, Birgitte

2009-01-01

We demonstrate of-axis spectral beam combining applied to a 980 nm high power broad area diode laser bar. The experiments yielded 9 W of optical power at 30 A of operating current and the measured M2 values of the combined beam from 12 emitters were 1.9 and 6.4 for the fast and the slow axis......, respectively. The slow axis beam quality was 5-6 times better than the value obtained from a single emitter in free running mode. A high brightness of 79 MW/cm2-str was achieved using this configuration. To our knowledge, this is the highest brightness level ever achieved from a broad area diode laser bar....

High-power Al-free active region (λ= 852nm) DFB laser diodes for atomic clocks and interferometry applications

Science.gov (United States)

Ligeret, V.; Vermersch, F.-J.; Bansropun, S.; Lecomte, M.; Calligaro, M.; Parillaud, O.; Krakowski, M.

2017-11-01

Atomic clocks will be used in the future European positioning system Galileo. Among them, the optically pumped clocks provide a better alternative with comparable accuracy for a more compact system. For these systems, diode lasers emitting at 852nm are strategic components. The laser in a conventional bench for atomic clocks presents disadvantages for spatial applications. A better approach would be to realise a system based on a distributed-feedback laser (DFB). We have developed the technological foundations of such lasers operating at 852nm. These include an Al free active region, a single spatial mode ridge waveguide and a DFB structure. The device is a separate confinement heterostructure with a GaInP large optical cavity and a single compressive strained GaInAsP quantum well. The broad area laser diodes are characterised by low internal losses (value of less than 2MHz.

Single-pulse x-ray diffraction using polycapillary optics for in situ dynamic diffraction

Energy Technology Data Exchange (ETDEWEB)

Maddox, B. R., E-mail: maddox3@llnl.gov; Akin, M. C., E-mail: akin1@llnl.gov; Teruya, A.; Hunt, D.; Hahn, D.; Cradick, J. [Lawrence Livermore National Laboratory, Livermore, California 94550 (United States); Morgan, D. V. [National Security Technologies LLC, Los Alamos, New Mexico 87544 (United States)

2016-08-15

Diagnostic use of single-pulse x-ray diffraction (XRD) at pulsed power facilities can be challenging due to factors such as the high flux and brightness requirements for diffraction and the geometric constraints of experimental platforms. By necessity, the x-ray source is usually positioned very close, within a few inches of the sample. On dynamic compression platforms, this puts the x-ray source in the debris field. We coupled x-ray polycapillary optics to a single-shot needle-and-washer x-ray diode source using a laser-based alignment scheme to obtain high-quality x-ray diffraction using a single 16 ns x-ray pulse with the source >1 m from the sample. The system was tested on a Mo sample in reflection geometry using 17 keV x-rays from a Mo anode. We also identified an anode conditioning effect that increased the x-ray intensity by 180%. Quantitative measurements of the x-ray focal spot produced by the polycapillary yielded a total x-ray flux on the sample of 3.3 ± 0.5 × 10{sup 7} molybdenum Kα photons.

External modes in quantum dot light emitting diode with filtered optical feedback

International Nuclear Information System (INIS)

Al Husseini, Hussein B.; Al Naimee, Kais A.; Al-Khursan, Amin H.; Khedir, Ali. H.

2016-01-01

This research reports a theoretical investigation on the role of filtered optical feedback (FOF) in the quantum dot light emitting diode (QD-LED). The underlying dynamics is affected by a sidle node, which returns to an elliptical shape when the wetting layer (WL) is neglected. Both filter width and time delay change the appearance of different dynamics (chaotic and mixed mode oscillations, MMOs). The results agree with the experimental observations. Here, the fixed point analysis for QDs was done for the first time. For QD-LED with FOF, the system transits from the coherence collapse case in conventional optical feedback to a coherent case with a filtered mode in FOF. It was found that the WL washes out the modes which is an unexpected result. This may attributed to the longer capture time of WL compared with that between QD states. Thus, WL reduces the chaotic behavior.

Efficient generation of 1.9  W yellow light by cascaded frequency doubling of a distributed Bragg reflector tapered diode

DEFF Research Database (Denmark)

Hansen, Anders Kragh; Christensen, Mathias; Noordegraaf, Danny

2016-01-01

Watt-level yellow emitting lasers are interesting for medical applications, due to their high hemoglobin absorption, and for efficient detection of certain fluorophores. In this paper, we demonstrate a compact and robust diode-based laser system in the yellow spectral range. The system generates ...... of a laser diode enables the modulation of the pump wavelength by controlling the drive current. This is utilized to achieve a power modulation depth above 90% for the second harmonic light, with a rise time below 40  μs.......Watt-level yellow emitting lasers are interesting for medical applications, due to their high hemoglobin absorption, and for efficient detection of certain fluorophores. In this paper, we demonstrate a compact and robust diode-based laser system in the yellow spectral range. The system generates 1.......9 W of single-frequency light at 562.4 nm by cascaded single-pass frequency doubling of the 1124.8 nm emission from a distributed Bragg reflector (DBR) tapered laser diode. The absence of a free-space cavity makes the system stable over a base-plate temperature range of 30 K. At the same time, the use...

Progress in Applying Tunable Diode Laser Absorption Spectroscopy to Scramjet Isolators and Combustors

Science.gov (United States)

2010-05-01

us ing a T exas Instruments OPA380 transimpedance amplifier /op amp for each photodiode. This amplifier with 90 MHz of gain bandwidth is a single...spectra 4 2 Boltzmann plot for Run AC 6 3 CFD Simulations for isolator 7 4 Optical layout for diode laser system 11 5 Optical amplifier circuit 11 6...designed InGaAs photodiode arrays. These custom designed arrays amplify the signal f rom 2m m di ameter FGA21 phot odiodes ( FGA 21 f rom T horLabs

Gun muzzle flash detection using a single photon avalanche diode array in 0.18µm CMOS technology

Science.gov (United States)

Savuskan, Vitali; Jakobson, Claudio; Merhav, Tomer; Shoham, Avi; Brouk, Igor; Nemirovsky, Yael

2015-05-01

In this study, a CMOS Single Photon Avalanche Diode (SPAD) 2D array is used to record and sample muzzle flash events in the visible spectrum, from representative weapons. SPADs detect the emission peaks of alkali salts, potassium or sodium, with spectral emission lines around 769nm and 589nm, respectively. The alkali salts are included in the gunpowder to suppress secondary flashes ignited during the muzzle flash event. The SPADs possess two crucial properties for muzzle flash imaging: (i) very high photon detection sensitivity, (ii) a unique ability to convert the optical signal to a digital signal at the source pixel, thus practically eliminating readout noise. The sole noise sources are the ones prior to the readout circuitry (optical signal distribution, avalanche initiation distribution and nonphotonic generation). This enables high sampling frequencies in the kilohertz range without significant SNR degradation, in contrast to regular CMOS image sensors. This research will demonstrate the SPAD's ability to accurately sample and reconstruct the temporal behavior of the muzzle flash in the visible wavelength, in the presence of sunlight. The reconstructed signal is clearly distinguishable from background clutter, through exploitation of flash temporal characteristics and signal processing, which will be reported. The frame rate of ~16 KHz was chosen as an optimum between SNR degradation and temporal profile recognition accuracy. In contrast to a single SPAD, the 2D array allows for multiple events to be processed simultaneously. Moreover, a significant field of view is covered, enabling comprehensive surveillance and imaging.

Active stabilization of a diode laser injection lock.

Science.gov (United States)

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

2016-06-01

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

Highly efficient router-based readout algorithm for single-photon-avalanche-diode imagers for time-correlated experiments

Science.gov (United States)

Cominelli, A.; Acconcia, G.; Caldi, F.; Peronio, P.; Ghioni, M.; Rech, I.

2018-02-01

Time-Correlated Single Photon Counting (TCSPC) is a powerful tool that permits to record extremely fast optical signals with a precision down to few picoseconds. On the other hand, it is recognized as a relatively slow technique, especially when a large time-resolved image is acquired exploiting a single acquisition channel and a scanning system. During the last years, much effort has been made towards the parallelization of many acquisition and conversion chains. In particular, the exploitation of Single-Photon Avalanche Diodes in standard CMOS technology has paved the way to the integration of thousands of independent channels on the same chip. Unfortunately, the presence of a large number of detectors can give rise to a huge rate of events, which can easily lead to the saturation of the transfer rate toward the elaboration unit. As a result, a smart readout approach is needed to guarantee an efficient exploitation of the limited transfer bandwidth. We recently introduced a novel readout architecture, aimed at maximizing the counting efficiency of the system in typical TCSPC measurements. It features a limited number of high-performance converters, which are shared with a much larger array, while a smart routing logic provides a dynamic multiplexing between the two parts. Here we propose a novel routing algorithm, which exploits standard digital gates distributed among a large 32x32 array to ensure a dynamic connection between detectors and external time-measurement circuits.

Single In x Ga1-x As nanowire/p-Si heterojunction based nano-rectifier diode.

Science.gov (United States)

Sarkar, K; Palit, M; Guhathakurata, S; Chattopadhyay, S; Banerji, P

2017-09-20

Nanoscale power supply units will be indispensable for fabricating next generation smart nanoelectronic integrated circuits. Fabrication of nanoscale rectifier circuits on a Si platform is required for integrating nanoelectronic devices with on-chip power supply units. In the present study, a nanorectifier diode based on a single standalone In x Ga 1-x As nanowire/p-Si (111) heterojunction fabricated by metal organic chemical vapor deposition technique has been studied. The nanoheterojunction diodes have shown good rectification and fast switching characteristics. The rectification characteristics of the nanoheterojunction have been demonstrated by different standard waveforms of sinusoidal, square, sawtooth and triangular for two different frequencies of 1 and 0.1 Hz. Reverse recovery time of around 150 ms has been observed in all wave response. A half wave rectifier circuit with a simple capacitor filter has been assembled with this nanoheterojunction diode which provides 12% output efficiency. The transport of carriers through the heterojunction is investigated. The interface states density of the nanoheterojunction has also been determined. Occurrence of output waveforms incommensurate with the input is attributed to higher series resistance of the diode which is further explained considering the dimension of p-side and n-side of the junction. The sudden change of ideality factor after 1.7 V bias is attributed to recombination through interface states in space charge region. Low interface states density as well as high rectification ratio makes this heterojunction diode a promising candidate for future nanoscale electronics.

Probing photo-carrier collection efficiencies of individual silicon nanowire diodes on a wafer substrate.

Science.gov (United States)

Schmitt, S W; Brönstrup, G; Shalev, G; Srivastava, S K; Bashouti, M Y; Döhler, G H; Christiansen, S H

2014-07-21

Vertically aligned silicon nanowire (SiNW) diodes are promising candidates for the integration into various opto-electronic device concepts for e.g. sensing or solar energy conversion. Individual SiNW p-n diodes have intensively been studied, but to date an assessment of their device performance once integrated on a silicon substrate has not been made. We show that using a scanning electron microscope (SEM) equipped with a nano-manipulator and an optical fiber feed-through for tunable (wavelength, power using a tunable laser source) sample illumination, the dark and illuminated current-voltage (I-V) curve of individual SiNW diodes on the substrate wafer can be measured. Surprisingly, the I-V-curve of the serially coupled system composed of SiNW/wafers is accurately described by an equivalent circuit model of a single diode and diode parameters like series and shunting resistivity, diode ideality factor and photocurrent can be retrieved from a fit. We show that the photo-carrier collection efficiency (PCE) of the integrated diode illuminated with variable wavelength and intensity light directly gives insight into the quality of the device design at the nanoscale. We find that the PCE decreases for high light intensities and photocurrent densities, due to the fact that considerable amounts of photo-excited carriers generated within the substrate lead to a decrease in shunting resistivity of the SiNW diode and deteriorate its rectification. The PCE decreases systematically for smaller wavelengths of visible light, showing the possibility of monitoring the effectiveness of the SiNW device surface passivation using the shown measurement technique. The integrated device was pre-characterized using secondary ion mass spectrometry (SIMS), TCAD simulations and electron beam induced current (EBIC) measurements to validate the properties of the characterized material at the single SiNW diode level.

Ultrafast Single-Shot Optical Oscilloscope based on Time-to-Space Conversion due to Temporal and Spatial Walk-Off Effects in Nonlinear Mixing Crystal

Science.gov (United States)

Takagi, Yoshihiro; Yamada, Yoshifumi; Ishikawa, Kiyoshi; Shimizu, Seiji; Sakabe, Shuji

2005-09-01

A simple method for single-shot sub-picosecond optical pulse diagnostics has been demonstrated by imaging the time evolution of the optical mixing onto the beam cross section of the sum-frequency wave when the interrogating pulse passes over the tested pulse in the mixing crystal as a result of the combined effect of group-velocity difference and walk-off beam propagation. A high linearity of the time-to-space projection is deduced from the process solely dependent upon the spatial uniformity of the refractive indices. A snap profile of the accidental coincidence between asynchronous pulses from separate mode-locked lasers has been detected, which demonstrates the single-shot ability.

Optical measuring system with an interrogator and a polymer-based single-mode fibre optic sensor system

DEFF Research Database (Denmark)

2017-01-01

The present invention relates to an optical measuring system comprising a polymer-based single-mode fibre-optic sensor system (102), an optical interrogator (101), and an optical arrangement (103) interconnecting the optical interrogator (101) and the polymer-based single-mode fibre-optic sensor...... system (102). The invention further relates to an optical interrogator adapted to be connected to a polymer-based single-mode fibre-optic sensor system via an optical arrangement. The interrogator comprises a broadband light source arrangement (104) and a spectrum analysing arrangement which receives...

A diode-laser optical frequency standard based on laser-cooled Ca atoms: sub-kilohertz spectroscopy by optical shelving detection

International Nuclear Information System (INIS)

Oates, C.W.; Bondu, F.; Fox, R.W.; Hollberg, L.

1999-01-01

We report an optical frequency standard at 657 nm based on laser-cooled/trapped Ca atoms. The system consists of a novel, compact magneto-optic trap which uses 50 mW of frequency-doubled diode laser light at 423 nm and can trap >10 7 Ca atoms in 20 ms. High resolution spectroscopy on this atomic sample using the narrow 657 nm intercombination line resolves linewidths (FWHM) as narrow as 400 Hz, the natural linewidth of the transition. The spectroscopic signal-to-noise ratio is enhanced by an order of magnitude with the implementation of a ''shelving'' detection scheme on the 423 nm transition. Our present apparatus achieves a fractional frequency instability of 5 x 10 -14 in 1 s with a potential atom shot-noise-limited performance of 10 -16 τ -1/2 and excellent prospects for high accuracy. (orig.)

High average power diode pumped solid state lasers for CALIOPE

International Nuclear Information System (INIS)

Comaskey, B.; Halpin, J.; Moran, B.

1994-07-01

Diode pumping of solid state media offers the opportunity for very low maintenance, high efficiency, and compact laser systems. For remote sensing, such lasers may be used to pump tunable non-linear sources, or if tunable themselves, act directly or through harmonic crystals as the probe. The needs of long range remote sensing missions require laser performance in the several watts to kilowatts range. At these power performance levels, more advanced thermal management technologies are required for the diode pumps. The solid state laser design must now address a variety of issues arising from the thermal loads, including fracture limits, induced lensing and aberrations, induced birefringence, and laser cavity optical component performance degradation with average power loading. In order to highlight the design trade-offs involved in addressing the above issues, a variety of existing average power laser systems are briefly described. Included are two systems based on Spectra Diode Laboratory's water impingement cooled diode packages: a two times diffraction limited, 200 watt average power, 200 Hz multi-rod laser/amplifier by Fibertek, and TRW's 100 watt, 100 Hz, phase conjugated amplifier. The authors also present two laser systems built at Lawrence Livermore National Laboratory (LLNL) based on their more aggressive diode bar cooling package, which uses microchannel cooler technology capable of 100% duty factor operation. They then present the design of LLNL's first generation OPO pump laser for remote sensing. This system is specified to run at 100 Hz, 20 nsec pulses each with 300 mJ, less than two times diffraction limited, and with a stable single longitudinal mode. The performance of the first testbed version will be presented. The authors conclude with directions their group is pursuing to advance average power lasers. This includes average power electro-optics, low heat load lasing media, and heat capacity lasers

Design of all solid state tunable single-mode Ti: sapphire laser for nuclear industry

International Nuclear Information System (INIS)

Lee, J.H.; Nam, S.M.; Lee, Y.J.; Lee, J.M.; Horn, Roland E.; Wendt, Klaus

1999-01-01

We designed a Ti:Sapphire laser pumped by a diode laser pumped solid state laser (DPSSL). The DPSSL was intra-cavity frequency doubled and it had 20 W output power. The Ti:Sapphire laser was designed for single longitudinal mode lasing. For single mode lasing, the laser used several solid etalons. We simulated temporal evolution of the laser pulse and single pass amplification rate of the photons in each modes from rate equations. From the result, we found that single mode lasing is viable in this cavity

PERFORMANCE OPTIMIZATION OF THE DIODE-PUMPED SOLID-STATE LASER FOR SPACE APPLICATIONS

Directory of Open Access Journals (Sweden)

D. A. Arkhipov

2015-11-01

Full Text Available Subject of Research. Thermophysical and optical techniques of parameter regulation for diode pumped solid-state laser are studied as applied to space laser communication and laser ranging lines. Methods. The investigations are carried out on the base of the original design of diode pumped solid-state laser module that includes the following: Nd:YAG slab element, diode pumped by 400W QCW produced by NORTHROP GRUMMAN; two-pass unstable resonator with rotation of the laser beam aperture about its axis through 1800; the output mirror of the resonator with a variable reflection coefficient; hyperthermal conductive plates for thermal stabilization of the laser diode generation modes. The presence of thermal conductive plates excludes conventional running water systems applied as cooling systems for solid-state laser components. The diodes temperature stabilization is achieved by applying the algorithm of pulse-width modulation of power of auxiliary electric heaters. To compensate for non-stationary thermal distortions of the slab refractive index, the laser resonator scheme comprises a prism reflector with an apex angle of 1200. Narrow sides of the prism are covered with reflective coating, and its wide side is sprayed with antireflection coating. The beam aperture is turned around its axis through 1800 because of triple reflection of the beam inside the prism. The turning procedure leads to compensating for the output beam phase distortions in view of symmetric character of the aberrations of slab refractive index. To suppress parasitic oscillations inside the slab, dielectric coatings of wide sides of the slab are used. Main Results. We have demonstrated theoretically and experimentally that the usage of hyperthermal conductive plates together with the algorithm of pulse-width modulation provides stabilizing of the diode substrate temperature accurate within ± 0.1 °С and smoothing the temperature distribution along the plate surface accurate

Temperature dependent admittance spectroscopy of GaAs/AlGaAs single-quantum-well laser diodes (SQWLDs)

International Nuclear Information System (INIS)

Bengi, A.; Uslu, H.; Asar, T.; Altindal, S.; Cetin, S.S.; Mammadov, T.S.; Ozcelik, S.

2011-01-01

Research highlights: → It is well known the quantum-well (QW) lasers are the most important optoelectronic devices in many application fields. The temperature dependent I-V and C-V measurements allow us to understand the different aspects of conduction mechanisms of these devices. The C-V and G/ω-V measurements should be done over a wide range of temperature in order to have a better understanding of the nature of barrier height and conduction mechanisms. Therefore, in this study, the main electrical parameters of GaAs/Al x Ga 1-x As single quantum well (SQW) laser diodes were determined from the admittance spectroscopy C-V and G/ω-V method in the temperature range of 80-360 K. In addition, the capacitance and conductance values measured under both reverse and forward bias were corrected in order to eliminate the effect of R s to obtain the real diode capacitance. - Abstract: In this study, the main electrical parameters, such as doping concentration (N D ), barrier height (Φ CV ), depletion layer width (W D ), series resistance (R s ) and Fermi energy level (E F ), of GaAs/Al x Ga 1-x As single quantum well (SQW) laser diodes were investigated using the admittance spectroscopy (C-V and G/ω-V) method in the temperature range of 80-360 K. The reverse bias C -2 vs. V plots gives a straight line in a wide voltage region, especially in weak inversion region. The values of Φ CV at the absolute temperature (T = 0 K) and the temperature coefficient (α) of barrier height were found as 1.22 eV and -8.65 x 10 -4 eV/K, respectively. This value of α is in a close agreement with α of GaAs band gap (-5.45 x 10 -4 eV/K). Experimental results show that the capacitance-voltage (C-V) and conductance-voltage (G/ω-V) characteristics of the diode are affected by not only temperature but also R s . The capacitance-voltage-temperature (C-V-T) and conductance-voltage-temperature (G/ω-V-T) characteristics confirmed that temperature and R s of the diode have effects on the

Near-infrared Raman spectroscopy using a diode laser and CCD detector for tissue diagnostics

International Nuclear Information System (INIS)

Gustafsson, U.

1993-09-01

This paper surveys the possibility to observe high-quality NIR Raman spectra of both fluorescent and non-fluorescent samples with the use of a diode laser, a fibre optic sample, a single spectrometer and a charge-coupled device (CCD) detector. A shifted excitation difference technique was implemented for removing the broad-band fluorescence emission from Raman spectra of the highly fluorescent samples. Raman spectra of 1.4-dioxane, toluene, rhodamine 6G, and HITCI in the 640 to 1840 cm -1 spectral region and 1.4-dioxane and toluene in the 400 to 3400 cm -1 spectral region have been recorded. The results open the field of sensitive tissue characterisation and the possibility of optical biopsy in vivo by using NIR Raman spectroscopy with fibre optic sampling, a single spectrometer, and a CCD detector

Active stabilization of a diode laser injection lock

Energy Technology Data Exchange (ETDEWEB)

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep [Department of Physics, University of Washington, P.O. Box 351560, Seattle, Washington 98195-1560 (United States)

2016-06-15

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

Active stabilization of a diode laser injection lock

International Nuclear Information System (INIS)

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

2016-01-01

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser’s transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudden failures such as temporary occlusion of the injection beam. We demonstrate the successful performance of our stabilization method in a diode laser setup at 399 nm used for laser cooling of Yb atoms. The device eases the requirements on passive stabilization and can benefit any diode laser injection lock application, particularly those where several such locks are employed.

Indium tin oxide-rod/single walled carbon nanotube based transparent electrodes for ultraviolet light-emitting diodes

International Nuclear Information System (INIS)

Yun, Min Ju; Kim, Hee-Dong; Kim, Kyeong Heon; Sung, Hwan Jun; Park, Sang Young; An, Ho-Myoung; Kim, Tae Geun

2013-01-01

In this paper, we report a transparent conductive oxide electrode scheme working for ultraviolet light-emitting diodes based on indium tin oxide (ITO)-rod and a single walled carbon nanotube (SWCNT) layer. We prepared four samples with ITO-rod, SWCNT/ITO-rod, ITO-rod/SWCNT, and SWCNT/ITO-rod/SWCNT structures for comparison. As a result, the sample with SWCNT/ITO-rod/SWCNT structures showed the highest transmittance over 90% at 280 nm and the highest Ohmic behavior (with sheet resistance of 5.33 kΩ/□) in the current–voltage characteristic curves. - Highlights: • Transparent conductive oxide (TCO) electrodes are proposed for UV light-emitting diodes. • These TCO electrodes are based on evaporated indium tin oxide (ITO)-rods. • Single walled carbon nanotube (SWCNT) layers are used as a current spreading layer. • The proposed TCO electrode structures show more than 90% transmittance at 280 nm

Diode-pumped glass laser (10 J X 10 HZ) development

International Nuclear Information System (INIS)

Tadashi Kanabe; Toshiyuki Kawashima; Masanobu Yamanaka; Masahiro Nakatsuka; Yasukazu Izawa; Takeshi Kanzaki; Hirofumi Kan; Sadao Nakai

2002-01-01

A high-energy, high beam quality, diode-pumped 1053-nm Nd:phosphate glass laser amplifier has been demonstrated in order to verify the conceptual design of HALNA (High Average-power Laser for Nuclear-fusion Application): a diode-pumped solid-state laser based on a water-cooled zig-zag slab optical geometry. This amplifier yielded 8.5 J output energy per pulse at 0.5 Hz in a 20 ns pulse of two times the diffraction limit beam quality with an optical-to-optical conversion efficiency of 10.9%. The experimental results revealed that the primary requirements for the IFE driver, such as diode-pumping, energy storage and extraction efficiencies, and beam quality have been fulfilled

Diode-laser-illuminated automotive lamp systems

Science.gov (United States)

Marinelli, Michael A.; Remillard, Jeffrey T.

1998-05-01

We have utilized the high brightness of state-of-the-art diode laser sources, and a variety of emerging optical technologies to develop a new class of thin, uniquely styled automotive brake and signal lamps. Using optics based on thin (5 mm) plastic sheets, these lamps provide appearance and functional advantages not attainable with traditional automotive lighting systems. The light is coupled into the sheets using a 1 mm diameter glass fiber, and manipulated using refraction and reflection from edges, surfaces, and shaped cut-outs. Light can be extracted with an efficiency of approximately 50% and formed into a luminance distribution that meets the Society of Automotive Engineers (SAE) photometric requirements. Prototype lamps using these optics have been constructed and are less than one inch in thickness. Thin lamps reduce sheet metal costs, complexity, material usage, weight, and allow for increased trunk volume. In addition, these optics enhance lamp design flexibility. When the lamps are not energized, they can appear body colored, and when lighted, the brightness distribution across the lamp can be uniform or structured. A diode laser based brake lamp consumes seven times less electrical power than one using an incandescent source and has instant on capability. Also, diode lasers have the potential to be 10-year/150,000 mile light sources.

Effects of surface morphology on the optical and electrical properties of Schottky diodes of CBD deposited ZnO nanostructures

Science.gov (United States)

Mwankemwa, Benard S.; Akinkuade, Shadrach; Maabong, Kelebogile; Nel, Jackie M.; Diale, Mmantsae

2018-04-01

We report on effect of surface morphology on the optical and electrical properties of chemical bath deposited Zinc oxide (ZnO) nanostructures. ZnO nanostructures were deposited on the seeded conducting indium doped tin oxide substrate positioned in three different directions in the growth solution. Field emission scanning electron microscopy was used to evaluate the morphological properties of the synthesized nanostructures and revealed that the positioning of the substrate in the growth solution affects the surface morphology of the nanostructures. The optical absorbance, photoluminescence and Raman spectroscopy of the resulting nanostructures are discussed. The electrical characterization of the Schottky diode such as barrier height, ideality factor, rectification ratios, reverse saturation current and series resistance were found to depend on the nanostructures morphology. In addition, current transport mechanism in the higher forward bias of the Schottky diode was studied and space charge limited current was found to be the dominant transport mechanism in all samples.

Performance of single-pass and by-pass multi-step multi-soil-layering systems for low-(C/N)-ratio polluted river water treatment.

Science.gov (United States)

Wei, Cai-Jie; Wu, Wei-Zhong

2018-09-01

Two kinds of hybrid two-step multi-soil-layering (MSL) systems loaded with different filter medias (zeolite-ceramsite MSL-1 and ceramsite-red clay MSL-2) were set-up for the low-(C/N)-ratio polluted river water treatment. A long-term pollutant removal performance of these two kinds of MSL systems was evaluated for 214 days. By-pass was employed in MSL systems to evaluate its effect on nitrogen removal enhancement. Zeolite-ceramsite single-pass MSL-1 system owns outstanding ammonia removal capability (24 g NH 4 + -Nm -2 d -1 ), 3 times higher than MSL-2 without zeolite under low aeration rate condition (0.8 × 10 4  L m -2 .h -1 ). Aeration rate up to 1.6 × 10 4  L m -2 .h -1 well satisfied the requirement of complete nitrification in first unit of both two MSLs. However, weak denitrification in second unit was commonly observed. By-pass of 50% influent into second unit can improve about 20% TN removal rate for both MSL-1 and MSL-2. Complete nitrification and denitrification was achieved in by-pass MSL systems after addition of carbon source with the resulting C/N ratio up to 2.5. The characters of biofilms distributed in different sections inside MSL-1 system well illustrated the nitrogen removal mechanism inside MSL systems. Two kinds of MSLs are both promising as an appealing nitrifying biofilm reactor. Recirculation can be considered further for by-pass MSL-2 system to ensure a complete ammonia removal. Copyright © 2018 Elsevier Ltd. All rights reserved.

Label-free tracking of single extracellular vesicles in a nano-fluidic optical fiber (Conference Presentation)

Science.gov (United States)

van der Pol, Edwin; Weidlich, Stefan; Lahini, Yoav; Coumans, Frank A. W.; Sturk, Auguste; Nieuwland, Rienk; Schmidt, Markus A.; Faez, Sanli; van Leeuwen, Ton G.

2016-03-01

Background: Extracellular vesicles, such as exosomes, are abundantly present in human body fluids. Since the size, concentration and composition of these vesicles change during disease, vesicles have promising clinical applications, including cancer diagnosis. However, since ~70% of the vesicles have a diameter <70 nm, detection of single vesicles remains challenging. Thus far, vesicles <70 nm have only be studied by techniques that require the vesicles to be adhered to a surface. Consequently, the majority of vesicles have never been studied in their physiological environment. We present a novel label-free optical technique to track single vesicles <70 nm in suspension. Method: Urinary vesicles were contained within a single-mode light-guiding silica fiber containing a 600 nm nano-fluidic channel. Light from a diode laser (660 nm wavelength) was coupled to the fiber, resulting in a strongly confined optical mode in the nano-fluidic channel, which continuously illuminated the freely diffusing vesicles inside the channel. The elastic light scattering from the vesicles, in the direction orthogonal to the fiber axis, was collected using a microscope objective (NA=0.95) and imaged with a home-built microscope. Results: We have tracked single urinary vesicles as small as 35 nm by elastic light scattering. Please note that vesicles are low-refractive index (n<1.4) particles, which we confirmed by combining data on thermal diffusion and light scattering cross section. Conclusions: For the first time, we have studied vesicles <70 nm freely diffusing in suspension. The ease-of-use and performance of this technique support its potential for vesicle-based clinical applications.

Detection of single-copy functional genes in prokaryotic cells by two-pass TSA-FISH with polynucleotide probes.

Science.gov (United States)

Kawakami, Shuji; Hasegawa, Takuya; Imachi, Hiroyuki; Yamaguchi, Takashi; Harada, Hideki; Ohashi, Akiyoshi; Kubota, Kengo

2012-02-01

In situ detection of functional genes with single-cell resolution is currently of interest to microbiologists. Here, we developed a two-pass tyramide signal amplification (TSA)-fluorescence in situ hybridization (FISH) protocol with PCR-derived polynucleotide probes for the detection of single-copy genes in prokaryotic cells. The mcrA gene and the apsA gene in methanogens and sulfate-reducing bacteria, respectively, were targeted. The protocol showed bright fluorescence with a good signal-to-noise ratio and achieved a high efficiency of detection (>98%). The discrimination threshold was approximately 82-89% sequence identity. Microorganisms possessing the mcrA or apsA gene in anaerobic sludge samples were successfully detected by two-pass TSA-FISH with polynucleotide probes. The developed protocol is useful for identifying single microbial cells based on functional gene sequences. Copyright © 2011 Elsevier B.V. All rights reserved.

Active Stabilization of a Diode Laser Injection Lock

OpenAIRE

Saxberg, Brendan; Plotkin-Swing, Benjamin; Gupta, Subhadeep

2016-01-01

We report on a device to electronically stabilize the optical injection lock of a semiconductor diode laser. Our technique uses as discriminator the peak height of the laser's transmission signal on a scanning Fabry-Perot cavity and feeds back to the diode current, thereby maintaining maximum optical power in the injected mode. A two-component feedback algorithm provides constant optimization of the injection lock, keeping it robust to slow thermal drifts and allowing fast recovery from sudde...

Orthogonal linear polarization tunable-beat ring laser with a superluminescent diode

Energy Technology Data Exchange (ETDEWEB)

Takahashi, Y.; Yoshino, T. [Department of Electronic Engineering, Faculty of Engineering, Gunma University, 1-5-1 Tenjin-cho, Kiryu, Gunma 376 (Japan)

1997-09-01

An orthogonal linear polarization operated ring laser with a superluminescent diode has been demonstrated to generate a tunable optical beat signal. The ring cavity contains a superluminescent diode as the optical gain medium, Faraday rotators, and a variable phase retarder (Babinet-Soleil compensator). By controlling the retarder, we changed the beat frequency in the range from a few tens of megahertz to 100 MHz. {copyright} 1997 Optical Society of America

Characterization of a time-resolved non-contact scanning diffuse optical imaging system exploiting fast-gated single-photon avalanche diode detection

Energy Technology Data Exchange (ETDEWEB)

Di Sieno, Laura, E-mail: laura.disieno@polimi.it; Dalla Mora, Alberto; Contini, Davide [Politecnico di Milano, Dipartimento di Fisica, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Wabnitz, Heidrun; Macdonald, Rainer [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Pifferi, Antonio [Politecnico di Milano, Dipartimento di Fisica, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Mazurenka, Mikhail [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Hannoversches Zentrum für Optische Technologien, Nienburger Str. 17, 30167 Hannover (Germany); Hoshi, Yoko [Department of Biomedical Optics, Medical Photonics Research Center, Hamamatsu University School of Medicine, Hamamatsu 431-3192 (Japan); Boso, Gianluca; Tosi, Alberto [Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Becker, Wolfgang [Becker and Hickl GmbH, Nahmitzer Damm 30, 12277 Berlin (Germany); Martelli, Fabrizio [Dipartimento di Fisica e Astronomia dell’Università degli Studi di Firenze, Via G. Sansone 1, Sesto Fiorentino, Firenze 50019 (Italy)

2016-03-15

We present a system for non-contact time-resolved diffuse reflectance imaging, based on small source-detector distance and high dynamic range measurements utilizing a fast-gated single-photon avalanche diode. The system is suitable for imaging of diffusive media without any contact with the sample and with a spatial resolution of about 1 cm at 1 cm depth. In order to objectively assess its performances, we adopted two standardized protocols developed for time-domain brain imagers. The related tests included the recording of the instrument response function of the setup and the responsivity of its detection system. Moreover, by using liquid turbid phantoms with absorbing inclusions, depth-dependent contrast and contrast-to-noise ratio as well as lateral spatial resolution were measured. To illustrate the potentialities of the novel approach, the characteristics of the non-contact system are discussed and compared to those of a fiber-based brain imager.

Characterization of a time-resolved non-contact scanning diffuse optical imaging system exploiting fast-gated single-photon avalanche diode detection

International Nuclear Information System (INIS)

Di Sieno, Laura; Dalla Mora, Alberto; Contini, Davide; Wabnitz, Heidrun; Macdonald, Rainer; Pifferi, Antonio; Mazurenka, Mikhail; Hoshi, Yoko; Boso, Gianluca; Tosi, Alberto; Becker, Wolfgang; Martelli, Fabrizio

2016-01-01

We present a system for non-contact time-resolved diffuse reflectance imaging, based on small source-detector distance and high dynamic range measurements utilizing a fast-gated single-photon avalanche diode. The system is suitable for imaging of diffusive media without any contact with the sample and with a spatial resolution of about 1 cm at 1 cm depth. In order to objectively assess its performances, we adopted two standardized protocols developed for time-domain brain imagers. The related tests included the recording of the instrument response function of the setup and the responsivity of its detection system. Moreover, by using liquid turbid phantoms with absorbing inclusions, depth-dependent contrast and contrast-to-noise ratio as well as lateral spatial resolution were measured. To illustrate the potentialities of the novel approach, the characteristics of the non-contact system are discussed and compared to those of a fiber-based brain imager.

The design and manufacture of a notch structure for a planar InP Gunn diode

International Nuclear Information System (INIS)

Bai Yang; Jia Rui; Wu De-Qi; Jin Zhi; Liu Xin-Yu

2013-01-01

A planar InP-based Gunn diode with a notch doping structure is designed and fabricated for integration into millimeter-wave and terahertz integrated circuits. We design two kinds of InP-based Gunn diodes. One has a fixed diameter of cathode area, but has variable spacing between anode and cathode; the other has fixed spacing, but a varying diameter. The threshold voltage and saturated current exhibit their strong dependences on the spacing (10 μm–20 μm) and diameter (40 μm–60 μm) of the InP Gunn diode. The threshold voltage is approximately 4.5 V and the saturated current is in a range of 293 mA–397 mA. In this work, the diameter of the diode and the space between anode and cathode are optimized. The devices are fabricated using a wet etching technique and show excellent performances. The results strongly suggest that low-cost and reliable InP planar Gunn diodes can be used as single chip terahertz sources. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Customization of Protein Single Nanowires for Optical Biosensing.

Science.gov (United States)

Sun, Yun-Lu; Sun, Si-Ming; Wang, Pan; Dong, Wen-Fei; Zhang, Lei; Xu, Bin-Bin; Chen, Qi-Dai; Tong, Li-Min; Sun, Hong-Bo

2015-06-24

An all-protein single-nanowire optical biosensor is constructed by a facile and general femtosecond laser direct writing approach with nanoscale structural customization. As-formed protein single nanowires show excellent optical properties (fine waveguiding performance and bio-applicable transmission windows), and are utilized as evanescent optical nanobiosensors for label-free biotin detection. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Current rectification in a single molecule diode: the role of electrode coupling.

Science.gov (United States)

Sherif, Siya; Rubio-Bollinger, Gabino; Pinilla-Cienfuegos, Elena; Coronado, Eugenio; Cuevas, Juan Carlos; Agraït, Nicolás

2015-07-24

We demonstrate large rectification ratios (> 100) in single-molecule junctions based on a metal-oxide cluster (polyoxometalate), using a scanning tunneling microscope (STM) both at ambient conditions and at low temperature. These rectification ratios are the largest ever observed in a single-molecule junction, and in addition these junctions sustain current densities larger than 10(5) A cm(-2). By following the variation of the I-V characteristics with tip-molecule separation we demonstrate unambiguously that rectification is due to asymmetric coupling to the electrodes of a molecule with an asymmetric level structure. This mechanism can be implemented in other type of molecular junctions using both organic and inorganic molecules and provides a simple strategy for the rational design of molecular diodes.

Electrical and optical properties of poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) and AuCl3-doped reduced graphene oxide/single-walled carbon nanotube films for ultraviolet light-emitting diodes.

Science.gov (United States)

Lee, Byeong Ryong; Lee, Jae Hoon; Kim, Kyeong Heon; Kim, Hee-Dong; Kim, Tae Geun

2014-12-01

We report the effects of poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) ( PSS) and gold chloride (AuCl) co-doping on the electrical and optical properties of reduced graphene oxide (RGO)/single-walled carbon nanotube (SWNT) films fabricated by dipcoating methods. The RGO/SWNT films were doped with both AuCl3 dissolved in nitromethane and PSS hole injection layers by spin coating to improve their electrical properties by increasing the work function of the RGO/SWNT films, thereby reducing the Schottky barrier height between the RGO/SWNT and p-GaN films. As a result, we obtained a reduced sheet resistance of 851.9 Ω/Ω and a contact resistance of 1.97 x 10(-1) Ω x cm2, together with a high transmittance of 84.1% at 380 nm. The contact resistance of these films should be further reduced to fully utilize the feature of the electrode scheme proposed in this work, but the current result suggests its potential use as a transparent conductive electrode for ultraviolet light-emitting diodes.

Condition monitoring of shaft of single-phase induction motor using optical sensor

Science.gov (United States)

Fulzele, Asmita G.; Arajpure, V. G.; Holay, P. P.; Patil, N. M.

2012-05-01

Transmission type of optical technique is developed to sense the condition of rotating shafts from a distance. A parallel laser beam is passed tangential over the surface of rotating shaft of a single phase induction motor and its flickering shadow is received on a photo sensor. Variations in sensor voltage output are observed on a digital storage oscilloscope. It is demonstrated that this signal carries information about shaft defects like miss alignment, play and impacts in bearings along with surface deformities. Mathematical model of signals corresponding to these shaft defects is developed. During the development and testing of the sensor, effects of reflections are investigated, sensing phenomenon is simulated, frequency response of the sensor is obtained and its performance is compared with conventional accelerometer.

Gun muzzle flash detection using a CMOS single photon avalanche diode

Science.gov (United States)

Merhav, Tomer; Savuskan, Vitali; Nemirovsky, Yael

2013-10-01

Si based sensors, in particular CMOS Image sensors, have revolutionized low cost imaging systems but to date have hardly been considered as possible candidates for gun muzzle flash detection, due to performance limitations, and low SNR in the visible spectrum. In this study, a CMOS Single Photon Avalanche Diode (SPAD) module is used to record and sample muzzle flash events in the visible spectrum, from representative weapons, common on the modern battlefield. SPADs possess two crucial properties for muzzle flash imaging - Namely, very high photon detection sensitivity, coupled with a unique ability to convert the optical signal to a digital signal at the source pixel, thus practically eliminating readout noise. This enables high sampling frequencies in the kilohertz range without SNR degradation, in contrast to regular CMOS image sensors. To date, the SPAD has not been utilized for flash detection in an uncontrolled environment, such as gun muzzle flash detection. Gun propellant manufacturers use alkali salts to suppress secondary flashes ignited during the muzzle flash event. Common alkali salts are compounds based on Potassium or Sodium, with spectral emission lines around 769nm and 589nm, respectively. A narrow band filter around the Potassium emission doublet is used in this study to favor the muzzle flash signal over solar radiation. This research will demonstrate the SPAD's ability to accurately sample and reconstruct the temporal behavior of the muzzle flash in the visible wavelength under the specified imaging conditions. The reconstructed signal is clearly distinguishable from background clutter, through exploitation of flash temporal characteristics.

Fourier-transform optical microsystems

Science.gov (United States)

Collins, S. D.; Smith, R. L.; Gonzalez, C.; Stewart, K. P.; Hagopian, J. G.; Sirota, J. M.

1999-01-01

The design, fabrication, and initial characterization of a miniature single-pass Fourier-transform spectrometer (FTS) that has an optical bench that measures 1 cm x 5 cm x 10 cm is presented. The FTS is predicated on the classic Michelson interferometer design with a moving mirror. Precision translation of the mirror is accomplished by microfabrication of dovetailed bearing surfaces along single-crystal planes in silicon. Although it is miniaturized, the FTS maintains a relatively high spectral resolution, 0.1 cm-1, with adequate optical throughput.

Numerical model for the deformation of nucleated cells by optical stretchers

KAUST Repository

Sraj, Ihab; Francois, Joshua; Marr, David W M; Eggleton, Charles D.

2015-01-01

In this paper, we seek to numerically study the deformation of nucleated cells by single diode-laser bar optical stretchers. We employ a recently developed computational model, the dynamic ray-tracing method, to determine the force distribution

Single Spatial-Mode Room-Temperature-Operated 3.0 to 3.4 micrometer Diode Lasers

Science.gov (United States)

Frez, Clifford F.; Soibel, Alexander; Belenky, Gregory; Shterengas, Leon; Kipshidze, Gela

2010-01-01

Compact, highly efficient, 3.0 to 3.4 m light emitters are in demand for spectroscopic analysis and identification of chemical substances (including methane and formaldehyde), infrared countermeasures technologies, and development of advanced infrared scene projectors. The need for these light emitters can be currently addressed either by bulky solid-state light emitters with limited power conversion efficiency, or cooled Interband Cascade (IC) semiconductor lasers. Researchers here have developed a breakthrough approach to fabrication of diode mid-IR lasers that have several advantages over IC lasers used for the Mars 2009 mission. This breakthrough is due to a novel design utilizing the strain-engineered quantum-well (QW) active region and quinternary barriers, and due to optimization of device material composition and growth conditions (growth temperatures and rates). However, in their present form, these GaSb-based laser diodes cannot be directly used as a part of sensor systems. The device spectrum is too broad to perform spectroscopic analysis of gas species, and operating currents and voltages are too high. In the current work, the emitters were fabricated as narrow-ridge waveguide index-guided lasers rather than broad stripe-gain guided multimode Fabry-Perot (FP) lasers as was done previously. These narrow-ridge waveguide mid-IR lasers exhibit much lower power consumptions, and can operate in a single spatial mode that is necessary for demonstration of single-mode distributed feedback (DBF) devices for spectroscopic applications. These lasers will enable a new generation of compact, tunable diode laser spectrometers with lower power consumption, reduced complexity, and significantly reduced development costs. These lasers can be used for the detection of HCN, C2H2, methane, and ethane.

Single-pass high-gain tapered free-electron laser with transverse diffraction in the postsaturation regime

Directory of Open Access Journals (Sweden)

Cheng-Ying Tsai

2018-06-01

Full Text Available It has been well known that the resonant interaction of an ultrarelativistic electron beam and the radiation field in the single-pass high-gain free electron laser (FEL amplifier leads to the optical gain guiding. The transverse Laplacian term of the slowly varying wave equation in the linear regime can be approximated as a constant detuning parameter, i.e., |∇_{⊥}^{2}|∼k_{R}/z_{R} where k_{R} is the resonant wave number and z_{R} is the Rayleigh range of the laser. In the post-saturation regime, the radiation power begins to oscillate about an equilibrium for the untapered case while continues to grow by undulator tapering. Moreover, in this regime the gain guiding decreases and the simple constant detune is no longer valid. In this paper we study the single-pass high-gain FEL performance in the post-saturation regime with inclusion of diffraction effect and undulator tapering. Our analysis relies upon two constants of motion, one from the energy conservation and the other from the adiabatic invariant of the action variable. By constructing a two-dimensional axisymmetric wave equation and the coupled one-dimensional electron dynamical equations, the performance of a tapered FEL in the postsaturation regime can be analyzed, including the fundamental mode profile, the power efficiency and the scaled energy spread. We begin the analytical investigation with two different axisymmetric electron beam profiles, the uniform and bounded parabolic ones. It is found that the tapered FEL power efficiency can be smaller but close to the taper ratio provided the resonant phase remains constant and the beam-wave is properly matched. Such a tapered efficiency is nearly independent of transverse electron beam size before significant electron detrapping occurs. This is essentially different from the untapered case, where the power extraction efficiency is around the essential FEL gain bandwidth (or ρ, the Pierce or FEL parameter and depends on the beam

Evaluation of the ID220 single photon avalanche diode for extended spectral range of photon time-of-flight spectroscopy

DEFF Research Database (Denmark)

Nielsen, Otto Højager Attermann; Dahl, Anders Bjorholm; Anderson-Engels, Stefan

This paper describe the performance of the ID220 single photon avalanche diode for single photon counting, and investigates its performance for photon time-of-flight (PToF) spectroscopy. At first this report will serve as a summary to the group for PToF spectroscopy at the Department of Physics...

A novel diode laser system for photodynamic therapy

DEFF Research Database (Denmark)

Samsøe, E.; Andersen, P. E.; Petersen, P.

2001-01-01

In this paper a novel diode laser system for photodynamic therapy is demonstrated. The system is based on linear spatial filtering and optical phase conjugate feedback from a photorefractive BaTiO3 crystal. The spatial coherence properties of the diode laser are significantly improved. The system...

A pulsated weak-resonant-cavity laser diode with transient wavelength scanning and tracking for injection-locked RZ transmission.

Science.gov (United States)

Lin, Gong-Ru; Chi, Yu-Chieh; Liao, Yu-Sheng; Kuo, Hao-Chung; Liao, Zhi-Wang; Wang, Hai-Lin; Lin, Gong-Cheng

2012-06-18

By spectrally slicing a single longitudinal-mode from a master weak-resonant-cavity Fabry-Perot laser diode with transient wavelength scanning and tracking functions, the broadened self-injection-locking of a slave weak-resonant-cavity Fabry-Perot laser diode is demonstrated to achieve bi-directional transmission in a 200-GHz array-waveguide-grating channelized dense-wavelength-division-multiplexing passive optical network system. Both the down- and up-stream slave weak-resonant-cavity Fabry-Perot laser diodes are non-return-to-zero modulated below threshold and coherently injection-locked to deliver the pulsed carrier for 25-km bi-directional 2.5 Gbits/s return-to-zero transmission. The master weak-resonant-cavity Fabry-Perot laser diode is gain-switched at near threshold condition and delivers an optical coherent pulse-train with its mode linewidth broadened from 0.2 to 0.8 nm by transient wavelength scanning, which facilitates the broadband injection-locking of the slave weak-resonant-cavity Fabry-Perot laser diodes with a threshold current reducing by 10 mA. Such a transient wavelength scanning induced spectral broadening greatly releases the limitation on wavelength injection-locking range required for the slave weak-resonant-cavity Fabry-Perot laser diode. The theoretical modeling and numerical simulation on the wavelength scanning and tracking effects of the master and slave weak-resonant-cavity Fabry-Perot laser diodes are performed. The receiving power sensitivity for back-to-back transmission at bit-error-rate transmission is less than 2 dB for all 16 channels.

Optimize Etching Based Single Mode Fiber Optic Temperature Sensor

OpenAIRE

Ajay Kumar; Dr. Pramod Kumar

2014-01-01

This paper presents a description of etching process for fabrication single mode optical fiber sensors. The process of fabrication demonstrates an optimized etching based method to fabricate single mode fiber (SMF) optic sensors in specified constant time and temperature. We propose a single mode optical fiber based temperature sensor, where the temperature sensing region is obtained by etching its cladding diameter over small length to a critical value. It is observed that th...

Single spin stochastic optical reconstruction microscopy

OpenAIRE

Pfender, Matthias; Aslam, Nabeel; Waldherr, Gerald; Wrachtrup, Jörg

2014-01-01

We experimentally demonstrate precision addressing of single quantum emitters by combined optical microscopy and spin resonance techniques. To this end we utilize nitrogen-vacancy (NV) color centers in diamond confined within a few ten nanometers as individually resolvable quantum systems. By developing a stochastic optical reconstruction microscopy (STORM) technique for NV centers we are able to simultaneously perform sub diffraction-limit imaging and optically detected spin resonance (ODMR)...

Low-noise low-jitter 32-pixels CMOS single-photon avalanche diodes array for single-photon counting from 300 nm to 900 nm

Energy Technology Data Exchange (ETDEWEB)

Scarcella, Carmelo; Tosi, Alberto, E-mail: alberto.tosi@polimi.it; Villa, Federica; Tisa, Simone; Zappa, Franco [Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

2013-12-15

We developed a single-photon counting multichannel detection system, based on a monolithic linear array of 32 CMOS SPADs (Complementary Metal-Oxide-Semiconductor Single-Photon Avalanche Diodes). All channels achieve a timing resolution of 100 ps (full-width at half maximum) and a photon detection efficiency of 50% at 400 nm. Dark count rate is very low even at room temperature, being about 125 counts/s for 50 μm active area diameter SPADs. Detection performance and microelectronic compactness of this CMOS SPAD array make it the best candidate for ultra-compact time-resolved spectrometers with single-photon sensitivity from 300 nm to 900 nm.

Compact 2100 nm laser diode module for next-generation DIRCM

Science.gov (United States)

Dvinelis, Edgaras; Greibus, Mindaugas; TrinkÅ«nas, Augustinas; NaujokaitÄ--, Greta; Vizbaras, Augustinas; Vizbaras, Dominykas; Vizbaras, Kristijonas

2017-10-01

Compact high-power 2100 nm laser diode module for next-generation directional infrared countermeasure (DIRCM) systems is presented. Next-generation DIRCM systems require compact, light-weight and robust laser modules which could provide intense IR light emission capable of disrupting the tracking sensor of heat-seeking missile. Currently used solid-state and fiber laser solutions for mid-IR band are bulky and heavy making them difficult to implement in smaller form-factor DIRCM systems. Recent development of GaSb laser diode technology greatly improved optical output powers and efficiencies of laser diodes working in 1900 - 2450 nm band [1] while also maintaining very attractive size, weight, power consumption and cost characteristics. 2100 nm laser diode module presented in this work performance is based on high-efficiency broad emitting area GaSb laser diode technology. Each laser diode emitter is able to provide 1 W of CW output optical power with working point efficiency up to 20% at temperature of 20 °C. For output beam collimation custom designed fast-axis collimator and slow-axis collimator lenses were used. These lenses were actively aligned and attached using UV epoxy curing. Total 2 emitters stacked vertically were used in 2100 nm laser diode module. Final optical output power of the module goes up to 2 W at temperature of 20 °C. Total dimensions of the laser diode module are 35 x 25 x 16 mm (L x W x H) with a weight of 28 grams. Finally output beam is bore-sighted to mechanical axes of the module housing allowing for easy integration into next-generation DIRCM systems.

Single DV-DXCCII Based Voltage Controlled First Order All-pass Filter with Inverting and Non-inverting responses

Directory of Open Access Journals (Sweden)

B Chaturvedi

2015-12-01

Full Text Available In this paper, a new voltage controlled first order all-pass filter is presented. The proposed circuit employs a single differential voltage dual-X second generation current conveyor (DV-DXCCII and a grounded capacitor only. The proposed all-pass filter provides both inverting and non inverting voltage-mode outputs from the same configuration simultaneously without any matching condition. Non-ideal analysis along with sensitivity analysis is also investigated. The proposed circuit has low active and passive sensitivities. As an application the proposed all-pass filter is connected in cascade to get higher order filter. The theoretical results are validated thorough PSPICE simulations using TSMC 0.18µm CMOS process parameters.

Development of the multiwavelength monolithic integrated fiber optics terminal

Science.gov (United States)

Chubb, C. R.; Bryan, D. A.; Powers, J. K.; Rice, R. R.; Nettle, V. H.; Dalke, E. A.; Reed, W. R.

1982-01-01

This paper describes the development of the Multiwavelength Monolithic Integrated Fiber Optic Terminal (MMIFOT) for the NASA Johnson Space Center. The program objective is to utilize guided wave optical technology to develop wavelength-multiplexing and -demultiplexing units, using a single mode optical fiber for transmission between terminals. Intensity modulated injection laser diodes, chirped diffraction gratings and thin film lenses are used to achieve the wavelength-multiplexing and -demultiplexing. The video and audio data transmission test of an integrated optical unit with a Luneburg collimation lens, waveguide diffraction grating and step index condensing lens is described.

Single-photon generator for optical telecommunication wavelength

International Nuclear Information System (INIS)

Usuki, T; Sakuma, Y; Hirose, S; Takemoto, K; Yokoyama, N; Miyazawa, T; Takatsu, M; Arakawa, Y

2006-01-01

We report on the generation of single-photon pulses from a single InAs/InP quantum dot in telecommunication bands (1.3-1.55 μm: higher transmittance through an optical fiber). First we prepared InAs quantum dots on InP (0 0 1) substrates in a low-pressure MOCVD by using a so-called InP 'double-cap' procedure. The quantum dots have well-controlled photo emission wavelength in the telecommunication bands. We also developed a single-photon emitter in which quantum dots were embedded. Numerical simulation designed the emitter to realize efficient injection of the emitted photons into a single-mode optical fiber. Using a Hanbury-Brown and Twiss technique has proved that the photons through the fiber were single photons

Progress in semiconductor laser diodes: SPIE volume 723

International Nuclear Information System (INIS)

Eichen, E.

1987-01-01

This book contains proceedings arranged under the following session headings: High power diode lasers; single emitters and arrays; Ultrahigh speed modulation of semiconductor diode lasers; Coherence and linewidth stabilized semiconductor lasers; and Growth, fabrication, and evaluation of laser diodes

Single-transverse-mode near-IR superluminescent diodes with cw output power up to 100 mW

Energy Technology Data Exchange (ETDEWEB)

Andreeva, E V; Il' chenko, S N; Kostin, Yu O [Superlum Diodes Ltd., Moscow (Russian Federation); Yakubovich, S D [Moscow State Institute of Radio-Engineering, Electronics and Automation (Technical University), Moscow (Russian Federation)

2014-10-29

A series of light-emitting modules based on single-mode quantum-well superluminescent diodes with centre emission wavelengths of about 790, 840, 960 and 1060 nm and a cw output power up to 100 mW in free space is developed. A sufficiently long service life of these devices is demonstrated. (lasers)

Single-transverse-mode near-IR superluminescent diodes with cw output power up to 100 mW

International Nuclear Information System (INIS)

Andreeva, E V; Il'chenko, S N; Kostin, Yu O; Yakubovich, S D

2014-01-01

A series of light-emitting modules based on single-mode quantum-well superluminescent diodes with centre emission wavelengths of about 790, 840, 960 and 1060 nm and a cw output power up to 100 mW in free space is developed. A sufficiently long service life of these devices is demonstrated. (lasers)

Performance comparison of CO2 and diode lasers for deep-section concrete cutting

International Nuclear Information System (INIS)

Crouse, Philip L.; Li, Lin; Spencer, Julian T.

2004-01-01

Layer-by-layer laser machining with mechanical removal of vitrified dross between passes is a new technique with a demonstrated capability for deep-section cutting, not only of concrete, but of ceramic and refractory materials in general. For this application fairly low power densities are required. A comparison of experimental results using high-power CO 2 and diode lasers under roughly equivalent experimental conditions, cutting to depths of >100 mm, is presented. A marked improvement in cutting depth per pass is observed for the case of the diode laser. The increased cutting rate is rationalized in terms of the combined effects of coupling efficiency and beam shape

Photo-Detectors Integrated with Resonant Tunneling Diodes

Directory of Open Access Journals (Sweden)

José M. L. Figueiredo

2013-07-01

Full Text Available We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD. Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR region. The resonant tunneling diode photo-detector (RTD-PD can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTD’s NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems.

Studies of diode-pumped solid-state lasers based on Nd:KGW and Nd:YAG

International Nuclear Information System (INIS)

Ibrahim, Akram Yousif

1996-01-01

The experimental part of the thesis was dedicated to the studies of diode-pumped solid- state lasers. it includes experiments with end-pumped continuous wave (CW) Nd-doped crystals. In particular, we have concentrated to Nd:KGW, a relatively new and not studied in the literature about the laser materials. We have performed some basics measurements of this material. A fibre bundle coupled laser diode array was used as a pump source. We have investigated two main optical arrangements for the pump, allowing operation in two regimes: 1- Low pump power operation using selected output power from a single of the fibre bundle. 2- high pump power operation using the total output power from the bundle. The main parameters of the cavities we use (e.g. the cavity mode and the pumping spot size), were determined using the matrix approach and the equations for the propagation of the Gaussian beams. The highest output power obtained in this work for Nd:KGW with a transverse electromagnetic (TEM 0 0) single-mode, continuous (CW) operation, was 400 mW for 1700 mW pumping power from the diode laser. We present also data about the performance of a diode pumped Nd:YAG crystal. Our experiment shows that Nd:KGW is a promising material of low and medium pumping power levels. (Author)

An experimental evaluation of multi-pass solar air heaters

Energy Technology Data Exchange (ETDEWEB)

Satcunanathan, S.; Persad, P.

1980-12-01

Three collectors of identical dimensions but operating in the single-pass, two-pass and three-pass modes were tested simultaneously under ambient conditions. It was found that the two-pass air heater was consistently better than the single-pass air heater over the day for the range of mass flow rates considered. It was also found that at a mass flow rate of 0.0095 kg s/sup -1/ m/sup -2/, the thermal performances of the two-pass and three-pass collectors were identical, but at higher flow rates the two-pass collector was superior to the three-pass collector, the superiority decreasing with increasing mass flow rate.

All-optical, thermo-optical path length modulation based on the vanadium-doped fibers.

Science.gov (United States)

Matjasec, Ziga; Campelj, Stanislav; Donlagic, Denis

2013-05-20

This paper presents an all-fiber, fully-optically controlled, optical-path length modulator based on highly absorbing optical fiber. The modulator utilizes a high-power 980 nm pump diode and a short section of vanadium-co-doped single mode fiber that is heated through absorption and a non-radiative relaxation process. The achievable path length modulation range primarily depends on the pump's power and the convective heat-transfer coefficient of the surrounding gas, while the time response primarily depends on the heated fiber's diameter. An absolute optical length change in excess of 500 µm and a time-constant as short as 11 ms, were demonstrated experimentally. The all-fiber design allows for an electrically-passive and remote operation of the modulator. The presented modulator could find use within various fiber-optics systems that require optical (remote) path length control or modulation.

Nano-particle based scattering layers for optical efficiency enhancement of organic light-emitting diodes and organic solar cells

Science.gov (United States)

Chang, Hong-Wei; Lee, Jonghee; Hofmann, Simone; Hyun Kim, Yong; Müller-Meskamp, Lars; Lüssem, Björn; Wu, Chung-Chih; Leo, Karl; Gather, Malte C.

2013-05-01

The performance of both organic light-emitting diodes (OLEDs) and organic solar cells (OSC) depends on efficient coupling between optical far field modes and the emitting/absorbing region of the device. Current approaches towards OLEDs with efficient light-extraction often are limited to single-color emission or require expensive, non-standard substrates or top-down structuring, which reduces compatibility with large-area light sources. Here, we report on integrating solution-processed nano-particle based light-scattering films close to the active region of organic semiconductor devices. In OLEDs, these films efficiently extract light that would otherwise remain trapped in the device. Without additional external outcoupling structures, translucent white OLEDs containing these scattering films achieve luminous efficacies of 46 lm W-1 and external quantum efficiencies of 33% (both at 1000 cd m-2). These are by far the highest numbers ever reported for translucent white OLEDs and the best values in the open literature for any white device on a conventional substrate. By applying additional light-extraction structures, 62 lm W-1 and 46% EQE are reached. Besides universally enhancing light-extraction in various OLED configurations, including flexible, translucent, single-color, and white OLEDs, the nano-particle scattering film boosts the short-circuit current density in translucent organic solar cells by up to 70%.

High-resolution low-frequency fluctuation map of a multimode laser diode subject to filtered optical feedback via a fiber Bragg grating.

Science.gov (United States)

Baladi, Fadwa; Lee, Min Won; Burie, Jean-René; Bettiati, Mauro A; Boudrioua, Azzedine; Fischer, Alexis P A

2016-07-01

A highly detailed and extended map of low-frequency fluctuations is established for a high-power multi-mode 980 nm laser diode subject to filtered optical feedback from a fiber Bragg grating. The low-frequency fluctuations limits and substructures exhibit substantial differences with previous works.

Crosstalk of HgCdTe LWIR n-on-p diode arrays

International Nuclear Information System (INIS)

Sun Yinghui; Zhang Bo; Yu Meifang; Liao Qingjun; Zhang Yan; Wen Xin; Jiang Peilu; Hu Xiaoning; Dai Ning

2009-01-01

Crosstalk of HgCdTe long-wavelength infrared (LWIR) n-on-p diode arrays was measured using scanning laser microscopy. During the measurement, HgCdTe diode arrays with different diode pitches were frontside illuminated by a He-Ne laser at liquid nitrogen temperature and room temperature. The experimental results show that crosstalk between the nearest neighboring diodes decreases exponentially as the diode pitch increases, and the factors that affect the obtained crosstalk are presented and analyzed. Crosstalk out of the nominal diode area (optically sensitive area) is also measured and discussed.

Schlieren measurements in the round cylinder of an optically accessible internal combustion engine.

Science.gov (United States)

Kaiser, Sebastian Arnold; Salazar, Victor Manuel; Hoops, Alexandra A

2013-05-10

This paper describes the design and experimental application of an optical system to perform schlieren measurements in the curved geometry of the cylinder of an optically accessible internal combustion engine. Key features of the system are a pair of cylindrical positive meniscus lenses, which keep the beam collimated while passing through the unmodified, thick-walled optical cylinder, and a pulsed, high-power light-emitting diode with narrow spectral width. In combination with a high-speed CMOS camera, the system is used to visualize the fuel jet after injection of hydrogen fuel directly into the cylinder from a high-pressure injector. Residual aberrations, which limit the system's sensitivity, are characterized experimentally and are compared to the predictions of ray-tracing software.

Low-loss, low-confinement GaAs-AlGaAs DQW laser diode with optical trap layer for high-power operation

NARCIS (Netherlands)

Buda, M.; Vleuten, van der W.C.; Iordache, G.; Acket, G.A.; Roer, van de T.G.; Es, van C.M.; Roy, van B.H.; Smalbrugge, E.

1999-01-01

A low-confinement asymmetric GaAs-AlGaAs double-quantum-well molecular-beam-epitaxy grown laser diode structure with optical trap layer is characterized, The value of the internal absorption coefficient is as low as 1.4 cm-1, while keeping the series resistance at values comparable cm with

A diode laser-based velocimeter providing point measurements in unseeded flows using modulated filtered Rayleigh scattering (MFRS)

Science.gov (United States)

Jagodzinski, Jeremy James

2007-12-01

The development to date of a diode-laser based velocimeter providing point-velocity-measurements in unseeded flows using molecular Rayleigh scattering is discussed. The velocimeter is based on modulated filtered Rayleigh scattering (MFRS), a novel variation of filtered Rayleigh scattering (FRS), utilizing modulated absorption spectroscopy techniques to detect a strong absorption of a relatively weak Rayleigh scattered signal. A rubidium (Rb) vapor filter is used to provide the relatively strong absorption; alkali metal vapors have a high optical depth at modest vapor pressures, and their narrow linewidth is ideally suited for high-resolution velocimetry. Semiconductor diode lasers are used to generate the relatively weak Rayleigh scattered signal; due to their compact, rugged construction diode lasers are ideally suited for the environmental extremes encountered in many experiments. The MFRS technique utilizes the frequency-tuning capability of diode lasers to implement a homodyne detection scheme using lock-in amplifiers. The optical frequency of the diode-based laser system used to interrogate the flow is rapidly modulated about a reference frequency in the D2-line of Rb. The frequency modulation is imposed on the Rayleigh scattered light that is collected from the probe volume in the flow under investigation. The collected frequency modulating Rayleigh scattered light is transmitted through a Rb vapor filter before being detected. The detected modulated absorption signal is fed to two lock-in amplifers synchronized with the modulation frequency of the source laser. High levels of background rejection are attained since the lock-ins are both frequency and phase selective. The two lock-in amplifiers extract different Fourier components of the detected modulated absorption signal, which are ratioed to provide an intensity normalized frequency dependent signal from a single detector. A Doppler frequency shift in the collected Rayleigh scattered light due to a change

Comparison of laser diode response to pulsed electrical and radiative excitations

International Nuclear Information System (INIS)

Baggio, J.; Rainsant, J.M.; D'hose, C.; Lalande, P.; Musseau, O.; Leray, J.L.

1996-01-01

The authors have studied the electrical and optical response of two laser diodes under transient irradiation. Both diodes exhibit a positive photocurrent, which adds to the bias current, and a decrease of the optical power until extinction when dose rate is increased. Direct carrier generation in the laser cavity is a second order phenomena. The diode overall response is driven by both the substrate photocurrent and the transient conduction of current confinement regions, which decrease the net current density in the cavity and switches-off the laser emission. This behavior is in good agreement with pulsed electrical characterizations and 2D simulations

Inelastic transport and low-bias rectification in a single-molecule diode.

Science.gov (United States)

Hihath, Joshua; Bruot, Christopher; Nakamura, Hisao; Asai, Yoshihiro; Díez-Pérez, Ismael; Lee, Youngu; Yu, Luping; Tao, Nongjian

2011-10-25

Designing, controlling, and understanding rectification behavior in molecular-scale devices has been a goal of the molecular electronics community for many years. Here we study the transport behavior of a single molecule diode, and its nonrectifying, symmetric counterpart at low temperatures, and at both low and high biases to help elucidate the electron-phonon interactions and transport mechanisms in the rectifying system. We find that the onset of current rectification occurs at low biases, indicating a significant change in the elastic transport pathway. However, the peaks in the inelastic electron tunneling (IET) spectrum are antisymmetric about zero bias and show no significant changes in energy or intensity in the forward or reverse bias directions, indicating that despite the change in the elastic transmission probability there is little impact on the inelastic pathway. These results agree with first principles calculations performed to evaluate the IETS, which also allow us to identify which modes are active in the single molecule junction.

High energy erbium laser end-pumped by a laser diode bar array coupled to a Nonimaging Optic Concentrator

OpenAIRE

Tanguy , Eric; Feugnet , Gilles; Pocholle , Jean-Paul; Blondeau , R.; Poisson , M.A.; Duchemin , J.P.

1998-01-01

International audience; A high energy Er3+, Yb3+:glass laser end pumped by a laser diode array emitting at 980 nm coupled to a Nonimaging Optic Concentrator (NOC) is demonstrated. Energy up to 100 mJ and a 16% slope efficiency are achieved in a plano-plano laser cavity. The energy transfer coefficient from Yb3+ to Er3+ is estimated by a new method.

Highly efficient single-pass frequency doubling of a continuous-wave distributed feedback laser diode using a PPLN waveguide crystal at 488 nm.

Science.gov (United States)

Jechow, Andreas; Schedel, Marco; Stry, Sandra; Sacher, Joachim; Menzel, Ralf

2007-10-15

A continuous-wave distributed feedback diode laser emitting at 976 nm was frequency doubled by the use of a periodically poled lithium niobate waveguide crystal with a channel size of 3 microm x 5 microm and an interaction length of 10 mm. A laser to waveguide coupling efficiency of 75% could be achieved resulting in 304 mW of incident infrared light inside the waveguide. Blue laser light emission of 159 mW at 488 nm has been generated, which equals to a conversion efficiency of 52%. The resulting wall plug efficiency was 7.4%.

2D Dark-Count-Rate Modeling of PureB Single-Photon Avalanche Diodes in a TCAD Environment

NARCIS (Netherlands)

Knežević, Tihomir; Nanver, Lis K.; Suligoj, Tomislav; Witzigmann, Bernd; Osiński, Marek; Arakawa, Yasuhiko

2018-01-01

PureB silicon photodiodes have nm-shallow p+n junctions with which photons/electrons with penetration-depths of a few nanometer can be detected. PureB Single-Photon Avalanche Diodes (SPADs) were fabricated and analysed by 2D numerical modeling as an extension to TCAD software. The very shallow

The Beam Characteristics of High Power Diode Laser Stack

Science.gov (United States)

Gu, Yuanyuan; Fu, Yueming; Lu, Hui; Cui, Yan

2018-03-01

Direct diode lasers have some of the most attractive features of any laser. They are very efficient, compact, wavelength versatile, low cost, and highly reliable. However, the full utilization of direct diode lasers has yet to be realized. However, the poor quality of diode laser beam itself, directly affect its application ranges, in order to better use of diode laser stack, need a proper correction of optical system, which requires accurate understanding of the diode laser beam characteristics. Diode laser could make it possible to establish the practical application because of rectangular beam patterns which are suitable to make fine bead with less power. Therefore diode laser cladding will open a new field of repairing for the damaged machinery parts which must contribute to recycling of the used machines and saving of cost.

A new approach to the extraction of single exponential diode model parameters

Science.gov (United States)

Ortiz-Conde, Adelmo; García-Sánchez, Francisco J.

2018-06-01

A new integration method is presented for the extraction of the parameters of a single exponential diode model with series resistance from the measured forward I-V characteristics. The extraction is performed using auxiliary functions based on the integration of the data which allow to isolate the effects of each of the model parameters. A differentiation method is also presented for data with low level of experimental noise. Measured and simulated data are used to verify the applicability of both proposed method. Physical insight about the validity of the model is also obtained by using the proposed graphical determinations of the parameters.

Milestone experiments for single pass UV/X-ray FELs

Science.gov (United States)

Ben-Zvi, Ilan

1995-04-01

In the past decade, significant advances have been made in the theory and technology of high brightness electron beams and single pass FELs. These developments facilitate the construction of practical UV and X-ray FELs and has prompted proposals to the DOE for the construction of such facilities. There are several important experiments to be performed before committing to the construction of dedicated user facilities. Two experiments are under construction in the IR, the UCLA self-amplified spontaneous emission experiment and the BNL laser seeded harmonic generation experiment. A multi-institution collaboration is being organized about a 210 MeV electron linac available at BNL and the 10 m long NISUS wiggler. This experiment will be done in the UV and will test various experimental aspects of electron beam dynamics, FEL exponential regime with gain guiding, start-up from noise, seeding and harmonic generation. These experiments will advance the state of FEL research and lead towards future dedicated users' facilities.

Milestone experiments for single pass UV/X-ray FELs

International Nuclear Information System (INIS)

Ben-Zvi, I.

1994-01-01

In the past decade, significant advances have been made in the theory and technology of high brightness electron beams and single pass FELS. These developments facilitate the construction of practical UV and X-ray FELs and has prompted proposals to the DOE for the construction of such facilities. There are several important experiments to be performed before committing to the construction of dedicated user facilities. Two experiments are under construction in the IR, the UCLA Self Amplified Spontaneous Emission experiment and the BNL laser seeded Harmonic Generation experiment. A multi-institution collaboration is being organized about a 210 MeV electron linac available at BNL and the 10 meter tong NISUS wiggler. This experiment will be done in the UV and will test various experimental aspects of electron beam dynamics, FEL exponential regime with gain guiding, start up from noise, seeding and harmonic generation. These experiments will advance the state of FEL research and lead towards future dedicated users' facilities

Demonstration of optical rogue waves using a laser diode emitting at 980  nm and a fiber Bragg grating.

Science.gov (United States)

Lee, Min Won; Baladi, Fadwa; Burie, Jean-René; Bettiati, Mauro A; Boudrioua, Azzedine; Fischer, Alexis P A

2016-10-01

Rogue waves are observed for the first time, to the best of our knowledge, in a 980 nm laser diode subject to filtered optical feedback via a fiber Bragg grating. By counting the number of rogue waves in a fixed time window, a rogue wave map is established experimentally as a function of both the optical feedback ratio and the laser current. The comparison with low frequency fluctuations (LFFs) reveals that the rogue waves observed in our system are, in fact, LFF jump-ups.

Electrical characterization of Au/quercetin/n-Si heterojunction diode and optical analysis of quercetin thin film

International Nuclear Information System (INIS)

Tombak, Ahmet; Özaydin, C.; Boğa, M.; Kiliçoğlu, T.

2016-01-01

Quercetin (3,5,7,3’,4’-pentahydroxyflavone, QE), one of the most widely distributed flavonoids in fruits and vegetables, has been reported to possess a wide variety of biological effects, including anti-oxidative, anti-inflammatory, anti-apoptosis, hepatoprotective, renoprotective and neuroprotective effects. In this study organic-inorganic junctions were fabricated by forming quercetin complex thin film using spin coating technique on n-Si and evaporating Au metal on the film. Optical properties of quercetin thin film were studied with the help of spectrophotometer. The current-voltage (I-V) characteristic of Au/quercetin/n-Si heterojunction diode was investigated at room temperature in dark. Some basic parameters of the diode such as ideality factor, rectification ratio, barrier height, series resistance and shunt resistance were calculated using dark current-voltage measurement. It was also seen that the device had good sensitivity to the light under 40-100 mW/cm"2 illumination conditions.

Electrical characterization of Au/quercetin/n-Si heterojunction diode and optical analysis of quercetin thin film

Energy Technology Data Exchange (ETDEWEB)

Tombak, Ahmet, E-mail: tahmet@yahoo.com [Department of Physics, Faculty of Art& Science, Batman University, Batman 72000 (Turkey); Özaydin, C. [Department of Computer Engineering, Faculty of Engineering and Architecture, Batman University, Batman 72000 (Turkey); Boğa, M. [Faculty of Pharmacy, Pharmaceutical Technology Department, Dicle University, Diyarbakir 21280 (Turkey); Kiliçoğlu, T. [Department of Physics, Faculty of Science, Dicle University, Diyarbakir 21280 (Turkey)

2016-03-25

Quercetin (3,5,7,3’,4’-pentahydroxyflavone, QE), one of the most widely distributed flavonoids in fruits and vegetables, has been reported to possess a wide variety of biological effects, including anti-oxidative, anti-inflammatory, anti-apoptosis, hepatoprotective, renoprotective and neuroprotective effects. In this study organic-inorganic junctions were fabricated by forming quercetin complex thin film using spin coating technique on n-Si and evaporating Au metal on the film. Optical properties of quercetin thin film were studied with the help of spectrophotometer. The current-voltage (I-V) characteristic of Au/quercetin/n-Si heterojunction diode was investigated at room temperature in dark. Some basic parameters of the diode such as ideality factor, rectification ratio, barrier height, series resistance and shunt resistance were calculated using dark current-voltage measurement. It was also seen that the device had good sensitivity to the light under 40-100 mW/cm{sup 2} illumination conditions.

Single-Pass Percutaneous Liver Biopsy for Diffuse Liver Disease Using an Automated Device: Experience in 154 Procedures

International Nuclear Information System (INIS)

Rivera-Sanfeliz, Gerant; Kinney, Thomas B.; Rose, Steven C.; Agha, Ayad K.M.; Valji, Karim; Miller, Franklin J.; Roberts, Anne C.

2005-01-01

Purpose: To describe our experience with ultrasound (US)-guided percutaneous liver biopsies using the INRAD 18G Express core needle biopsy system.Methods: One hundred and fifty-four consecutive percutaneous core liver biopsy procedures were performed in 153 men in a single institution over 37 months. The medical charts, pathology reports, and radiology files were retrospectively reviewed. The number of needle passes, type of guidance, change in hematocrit level, and adequacy of specimens for histologic analysis were evaluated.Results: All biopsies were performed for histologic staging of chronic liver diseases. The majority of patients had hepatitis C (134/153, 90.2%). All patients were discharged to home after 4 hr of postprocedural observation. In 145 of 154 (94%) biopsies, a single needle pass was sufficient for diagnosis. US guidance was utilized in all but one of the procedures (153/154, 99.4%). The mean hematocrit decrease was 1.2% (44.1-42.9%). Pain requiring narcotic analgesia, the most frequent complication, occurred in 28 of 154 procedures (18.2%). No major complications occurred. The specimens were diagnostic in 152 of 154 procedures (98.7%).Conclusions: Single-pass percutaneous US-guided liver biopsy with the INRAD 18G Express core needle biopsy system is safe and provides definitive pathologic diagnosis of chronic liver disease. It can be performed on an outpatient basis. Routine post-biopsy monitoring of hematocrit level in stable, asymptomatic patients is probably not warranted

A car-borne highly sensitive near-IR diode-laser methane detector

International Nuclear Information System (INIS)

Berezin, A G; Ershov, Oleg V; Shapovalov, Yu P

2003-01-01

A highly sensitive automated car-borne detector for measuring methane concentration in real time is designed, developed and tested under laboratory and field conditions. Measurements were made with the help of an uncooled tunable near-IR 1.65-μm laser diode. The detector consists of a multipass optical cell with a 45-m long optical path and a base length of 0.5 m. The car-borne detector is intended for monitoring the methane concentration in air from the moving car to reveal the leakage of domestic gas. The sensitivity limit (standard deviation) under field conditions is 1 ppm (20 ppb under laboratory conditions) for a measuring time of 0.4 s. The measuring technique based on the detection of a single methane line ensured a high selectivity of methane detector relative to other gases. The methane detector can be easily modified for measuring other simple-molecule gases (e.g., CO, CO 2 , HF, NO 2 , H 2 O) by replacing the diode laser and varying the parameters of the control program. (special issue devoted to the memory of academician a m prokhorov)

Interference phenomenon determines the color in an organic light emitting diode

Science.gov (United States)

Granlund, Thomas; Pettersson, Leif A. A.; Anderson, Mats R.; Inganäs, Olle

1997-06-01

We report on electroluminescence from two-layer organic diodes made of poly(3-methyl-4-octylthiophene) and 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,2,4-oxadiazole films between electrodes of indium tin oxide and Ca/Al. The diodes emitted light in the green-blue range; the electroluminescence spectra varied between diodes with different thicknesses of the polymer and molecular layers. The optical phenomena were simulated with a model accounting for interference effects; simulated results showed that the electroluminescence from the organic diode can be due neither to luminescence of the polymer nor of the molecular layer. These model simulations, together with electrochemical measurements, can be interpreted as evidence for an indirect optical transition at the polymer/molecule interface that only occurs in a strong electric field. We label this transition an electroplex.

Single-Event Effect Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky Diode

Science.gov (United States)

Lauenstein, J.-M.; Casey, M. C.; Wilcox, E. P.; Kim, Hak; Topper, A. D.

2014-01-01

This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.

Voltage-Sharing Converter to Supply Single-Phase Asymmetrical Four-Level Diode-Clamped Inverter With High Power Factor Loads

DEFF Research Database (Denmark)

Boora, Arash A.; Nami, Alireza; Zare, Firuz

2010-01-01

The output voltage quality of some of the single-phase multilevel inverters can be improved when their dc-link voltages are regulated asymmetrically. Symmetrical and asymmetrical multilevel diode-clamped inverters have the problem of dc-link capacitor voltage balancing, especially when power factor...... that the proposed combination of introduced multioutput dc–dc converter and single-phase ADCI is a good candidate for power conversion in residential photovoltaic (PV) utilization....

Optical Microcavity: Sensing down to Single Molecules and Atoms

Directory of Open Access Journals (Sweden)

Shu-Yu Su

2011-02-01

Full Text Available This review article discusses fundamentals of dielectric, low-loss, optical micro-resonator sensing, including figures of merit and a variety of microcavity designs, and future perspectives in microcavity-based optical sensing. Resonance frequency and quality (Q factor are altered as a means of detecting a small system perturbation, resulting in realization of optical sensing of a small amount of sample materials, down to even single molecules. Sensitivity, Q factor, minimum detectable index change, noises (in sensor system components and microcavity system including environments, microcavity size, and mode volume are essential parameters to be considered for optical sensing applications. Whispering gallery mode, photonic crystal, and slot-type microcavities typically provide compact, high-quality optical resonance modes for optical sensing applications. Surface Bloch modes induced on photonic crystals are shown to be a promising candidate thanks to large field overlap with a sample and ultra-high-Q resonances. Quantum optics effects based on microcavity quantum electrodynamics (QED would provide novel single-photo-level detection of even single atoms and molecules via detection of doublet vacuum Rabi splitting peaks in strong coupling.

Direct-current polarization characteristics of various AlGaAs laser diodes

Science.gov (United States)

Fuhr, P. L.

1984-01-01

Polarization characteristics of AlGaAs laser diodes having various device geometries have been measured. Measurements were performed with the laser diodes operating under dc conditions. Results show that laser diodes having different device geometries have optical outputs that exhibit varying degrees of polarization purity. Implications of this result, with respect to incoherent polarization-beam combining, are addressed.

Spherical distribution structure of the semiconductor laser diode stack for pumping

International Nuclear Information System (INIS)

Zhao Tianzhuo; Yu Jin; Liu Yang; Zhang Xue; Ma Yunfeng; Fan Zhongwei

2011-01-01

A semiconductor laser diode stack is used for pumping and 8 semiconductor laser diode arrays of the stack are put on a sphere, and the output of every bar is specially off-axis compressed to realize high coupling efficiency. The output beam of this semiconductor laser diode stack is shaped by a hollow duct to the laser active medium. The efficiency of the hollow light pipe, which is used for semiconductor laser diode stack coupling, is analyzed by geometric optics and ray tracing. Geometric optics analysis diagnoses the reasons for coupling loss and guides the design of the structure. Ray tracing analyzes the relation between the structural parameters and the output characteristics of this pumping system, and guides parameter optimization. Simulation and analysis results show that putting the semiconductor laser diode arrays on a spherical surface can increase coupling efficiency, reduce the optimum duct length and improve the output energy field distribution. (semiconductor devices)

Circuit simulation model multi-quantum well laser diodes inducing transport and capture/escape

International Nuclear Information System (INIS)

Zhuber-Okrog, K.

1996-04-01

This work describes the development of world's first circuit simulation model for multi-quantum well (MQW) semiconductor lasers comprising caier transport and capture/escape effects. This model can be seen as the application of a new semiconductor device simulator for quasineutral structures including MQW layers with an extension for simple single mode modeling of optical behavior. It is implemented in a circuit simulation program. The model is applied to Fabry-Perot laser diodes and compared to measured data. (author)

Generation conditions of CW Diode Laser Sustained Plasma

Science.gov (United States)

Nishimoto, Koji; Matsui, Makoto; Ono, Takahiro

2016-09-01

Laser sustained plasma was generated using 1 kW class continuous wave diode laser. The laser beam was focused on the seed plasma generated by arc discharge in 1 MPa xenon lamp. The diode laser has advantages of high energy conversion efficiency of 80%, ease of maintenance, compact size and availability of conventional quartz based optics. Therefore, it has a prospect of further development compared with conventional CO2 laser. In this study, variation of the plasma shape caused by laser power is observed and also temperature distribution in the direction of plasma radius is measured by optical emission spectroscopy.

2000W high beam quality diode laser for direct materials processing

Science.gov (United States)

Qin, Wen-bin; Liu, You-qiang; Cao, Yin-hua; Gao, Jing; Pan, Fei; Wang, Zhi-yong

2011-11-01

This article describes high beam quality and kilowatt-class diode laser system for direct materials processing, using optical design software ZEMAX® to simulate the diode laser optical path, including the beam shaping, collimation, coupling, focus, etc.. In the experiment, the diode laser stack of 808nm and the diode laser stack of 915nm were used for the wavelength coupling, which were built vertical stacks up to 16 bars. The threshold current of the stack is 6.4A, the operating current is 85A and the output power is 1280W. Through experiments, after collimating the diode laser beam with micro-lenses, the fast axis BPP of the stack is less than 60mm.mrad, and the slow-axis BPP of the stack is less than 75mm.mrad. After shaping the laser beam and improving the beam quality, the fast axis BPP of the stack is still 60mm.mrad, and the slow-axis BPP of the stack is less than 19mm.mrad. After wavelength coupling and focusing, ultimately the power of 2150W was obtained, focal spot size of 1.5mm * 1.2mm with focal length 300mm. The laser power density is 1.2×105W/cm2, and that can be used for metal remelting, alloying, cladding and welding. The total optical coupling conversion efficiency is 84%, and the total electrical - optical conversion efficiency is 50%.

Thermally induced optical deformation of a Nd:YVO4 active disk under the action of multi-beam spatially periodic diode pumping

Science.gov (United States)

Guryev, D. A.; Nikolaev, D. A.; Tsvetkov, V. B.; Shcherbakov, I. A.

2018-05-01

A study of how the transverse distribution of an optical path changes in a Nd:YVO4 active disk was carried out in a ten-beam spatially periodic diode pumping in the one-dimensional case. The pumping beams’ transverse dimensions were comparable with the distances between them. The investigations were carried out using laser interferometry methods. It was found that the optical thickness changing in the active disk along the line of pumping spots was well described by a Gaussian function.

Focusing experiments with light ion diodes

International Nuclear Information System (INIS)

Johnson, D.L.

1978-01-01

A review of recent experimental and theoretical work at Sandia Laboratories on magnetically insulated single stage ion diodes for inertial confinement fusion experiments is presented. The production, focusing, and numerical simulation of a 0.5 TW annular proton beam using the Proto I dual transmission line generator is described. The modular magnetically insulated ion diode for the Hydra generator is also described along with recent experimental results. A brief description of how an array of modular diodes similar to the Hydra magnetically insulated diode could be used on the EBFA I generator for breakeven fusion experiments is presented

Optical design and fabrication of palm/fingerprint uniform illumination system with a high-power near-infrared light-emitting diode.

Science.gov (United States)

Jing, Lei; Wang, Yao; Zhao, Huifu; Ke, Hongliang; Wang, Xiaoxun; Gao, Qun

2017-06-10

In order to meet the requirements of uniform illumination for optical palm/fingerprint instruments and overcome the shortcomings of the poor uniform illumination on the working plane of the optical palm/fingerprint prism, a novel secondary optical lens with a free-form surface, compact structure, and high uniformity is presented in this paper. The design of the secondary optical lens is based on emission properties of the near-infrared light-emitting diode (LED) and basic principles of non-imaging optics, especially considering the impact of the thickness of the prism in the design. Through the numerical solution of Snell's law in geometric optics, we obtain the profile of the free-form surface of the lens. Using the optical software TracePro, we trace and simulate the illumination system. The results show that the uniformity is 89.8% on the working plane of the prism, and the test results show that the actual uniformity reaches 85.7% in the experiment, which provides an effective way for realizing a highly uniform illumination system with high-power near-infrared LED.

Laser semiconductor diode integrated with frequency doubler

International Nuclear Information System (INIS)

Tighineanu, I.; Dorogan, V.; Suruceanu, G.

2003-01-01

The invention relates to the technology of optoelectronic semiconductor devices and may be used in the production of laser semiconductor diodes integrated with optical nonlinear elements. The laser semiconductor diode integrated with frequency doubler includes a semiconductor substrate, a laser structure with waveguide. metal contacts in the waveguide of the laser structure it is formed a nanostructured field so that the nanostructure provides for the fulfillment of the phase synchronism conditions

Diode laser-pumped Ho:YLF laser

International Nuclear Information System (INIS)

Hemmati, H.

1987-01-01

The author reports laser action in Ho:YLF at 2.06 μm following optical pumping with a cw diode laser array. Diode laser-pumped Nd-YAG and Ho:YAG have been reported recently. Lasers with a wavelength of 2 μm have medical and optical communication applications. The diode laser light is focused with a 60-mm focal length lens onto the YLF crystal. A high-reflectivity mirror with 100-mm radius of curvature was used as the output coupler. The lasing threshold was at 5 mWof incident power. This is higher than expected considering that a high reflector was used as the output coupler. However, a more uniform cooling of the crystal is expected to lower the lasing threshold. With 100 mW of pump power coupled into the crystal, --20 mW of 2-μm radiation was observed from this unoptimized setup. The 2-μm laser output is highly sensitive to output coupler alignment, YLF crystal temperature, and pump laser wavelength. The 20% optical conversion efficiency achieved in his preliminary measurements is expected to be improved by better crystal cooling, proper matching of laser wavelength to crystal absorption, variations in the concentration of Ho and sensitizers and use of a proper output coupler. A study of the parameters mentioned above and the effect of crystal temperature on the laser output is under way

Diode lasers: From laboratory to industry

Science.gov (United States)

Nasim, Hira; Jamil, Yasir

2014-03-01

The invention of first laser in 1960 triggered the discovery of several new families of lasers. A rich interplay of different lasing materials resulted in a far better understanding of the phenomena particularly linked with atomic and molecular spectroscopy. Diode lasers have gone through tremendous developments on the forefront of applied physics that have shown novel ways to the researchers. Some interesting attributes of the diode lasers like cost effectiveness, miniature size, high reliability and relative simplicity of use make them good candidates for utilization in various practical applications. Diode lasers are being used by a variety of professionals and in several spectroscopic techniques covering many areas of pure and applied sciences. Diode lasers have revolutionized many fields like optical communication industry, medical science, trace gas monitoring, studies related to biology, analytical chemistry including elemental analysis, war fare studies etc. In this paper the diode laser based technologies and measurement techniques ranging from laboratory research to automated field and industry have been reviewed. The application specific developments of diode lasers and various methods of their utilization particularly during the last decade are discussed comprehensively. A detailed snapshot of the current state of the art diode laser applications is given along with a detailed discussion on the upcoming challenges.

Optimisation of the parameters of a pump chamber for solid-state lasers with diode pumping by the optical boiler method

Energy Technology Data Exchange (ETDEWEB)

Kiyko, V V; Kislov, V I; Ofitserov, E N; Suzdal' tsev, A G [A M Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)

2015-06-30

A pump chamber of the optical boiler type for solid-state lasers with transverse laser diode pumping is studied theoretically and experimentally. The pump chamber parameters are optimised using the geometrical optics approximation for the pump radiation. According to calculations, the integral absorption coefficient of the active element at a wavelength of 808 nm is 0.75 – 0.8 and the relative inhomogeneity of the pump radiation distribution over the active element volume is 17% – 19%. The developed pump chamber was used in a Nd:YAG laser. The maximum cw output power at a wavelength of 1064 nm was ∼480 W at the optical efficiency up to 19.6%, which agrees with theoretical estimates. (lasers)

Ultra-narrow band diode lasers with arbitrary pulse shape modulation (Conference Presentation)

Science.gov (United States)

Ryasnyanskiy, Aleksandr I.; Smirnov, Vadim; Mokhun, Oleksiy; Glebov, Alexei L.; Glebov, Leon B.

2017-03-01

Wideband emission spectra of laser diode bars (several nanometers) can be largely narrowed by the usage of thick volume Bragg gratings (VBGs) recorded in photo-thermo-refractive glass. Such narrowband systems, with GHz-wide emission spectra, found broad applications for Diode Pumped Alkali vapor Lasers, optically pumped rare gas metastable lasers, Spin Exchange Optical Pumping, atom cooling, etc. Although the majority of current applications of narrow line diode lasers require CW operation, there are a variety of fields where operation in a different pulse mode regime is necessary. Commercial electric pulse generators can provide arbitrary current pulse profiles (sinusoidal, rectangular, triangular and their combinations). The pulse duration and repetition rate however, have an influence on the laser diode temperature, and therefore, the emitting wavelength. Thus, a detailed analysis is needed to understand the correspondence between the optical pulse profiles from a diode laser and the current pulse profiles; how the pulse profile and duty cycle affects the laser performance (e.g. the wavelength stability, signal to noise ratio, power stability etc.). We present the results of detailed studies of the narrowband laser diode performance operating in different temporal regimes with arbitrary pulse profiles. The developed narrowband (16 pm) tunable laser systems at 795 nm are capable of operating in different pulse regimes while keeping the linewidth, wavelength, and signal-to-noise ratio (>20 dB) similar to the corresponding CW modules.

Liquid lens: advances in adaptive optics

Science.gov (United States)

Casey, Shawn Patrick

2010-12-01

'Liquid lens' technologies promise significant advancements in machine vision and optical communications systems. Adaptations for machine vision, human vision correction, and optical communications are used to exemplify the versatile nature of this technology. Utilization of liquid lens elements allows the cost effective implementation of optical velocity measurement. The project consists of a custom image processor, camera, and interface. The images are passed into customized pattern recognition and optical character recognition algorithms. A single camera would be used for both speed detection and object recognition.

Single Nanowire Probe for Single Cell Endoscopy and Sensing

Science.gov (United States)

Yan, Ruoxue

The ability to manipulate light in subwavelength photonic and plasmonic structures has shown great potentials in revolutionizing how information is generated, transformed and processed. Chemically synthesized nanowires, in particular, offers a unique toolbox not only for highly compact and integrated photonic modules and devices, including coherent and incoherent light sources, waveguides, photodetectors and photovoltaics, but also for new types of nanoscopic bio-probes for spot cargo delivery and in-situ single cell endoscopy and sensing. Such nanowire probes would enable us to carry out intracellular imaging and probing with high spatial resolution, monitor in-vivo biological processes within single living cells and greatly improve our fundamental understanding of cell functions, intracellular physiological processes, and cellular signal pathways. My work is aimed at developing a material and instrumental platform for such single nanowire probe. Successful optical integration of Ag nanowire plasmonic waveguides, which offers deep subwavelength mode confinement, and conventional photonic waveguides was demonstrated on a single nanowire level. The highest plasmonic-photonic coupling efficiency coupling was found at small coupling angles and low input frequencies. The frequency dependent propagation loss was observed in Ag nanowire and was confirmed by quantitative measurement and in agreement with theoretical expectations. Rational integration of dielectric and Ag nanowire waveguide components into hybrid optical-plasmonic routing devices has been demonstrated. This capability is essential for incorporating sub-100nm Ag nanowire waveguides into optical fiber based nanoprobes for single cell endoscopy. The nanoprobe system based on single nanowire waveguides was demonstrated by optically coupling semiconductor or metal nanowire with an optical fiber with tapered tip. This nanoprobe design requires minimal instrumentation which makes it cost efficient and readily

Optical diagnosis system for intense electron beam diode plasma

International Nuclear Information System (INIS)

Yang Jie; Shu Ting; Zhang Jun; Fan Yuwei; Yang Jianhua; Liu Lie; Yin Yi; Luo Ling

2012-01-01

A nanosecond time-resolved imaging platform for diode plasmas diagnostics has been constructed based on the pulsed electron beam accelerator and high speed framing camera (HSFC). The accelerator can provide an electrical pulse with voltages of 200-500 kV, rise-time (from 10% to 90% amplitude) of 25 ns and duration of 110 ns. The diode currents up to kA level can be extracted. The trigger signal for camera was picked up by a water-resistor voltage divider after the main switch of the accelerator, which could avoid the disadvantageous influence of the time jitter caused by the breakdown of the gas gaps. Then the sampled negative electrical pulse was converted into a transistor-transistor logic (TTL) signal (5 V) with rise time of about 1.5 ns and time jitter less than 1 ns via a processor. And this signal was taken as the synchronization time base. According to the working characteristics of the camera, the synchronization scheme relying mainly on electrical pulse delay method supplemented by light signal delay method was determined to make sure that the camera can work synchronously with the light production and transportation from the diode plasma within the time scale of nanosecond. Moreover, shielding and filtering methods were used to restrain the interference on the measurement system from the accelerator. Finally, time resolved 2-D framing images of the diode plasma were acquired. (authors)

Atrial electrogram quality in single-pass defibrillator leads with floating atrial bipole in patients with permanent atrial fibrillation and cardiac resynchronization therapy.

Science.gov (United States)

Sticherling, Christian; Müller, Dirk; Schaer, Beat A; Krüger, Silke; Kolb, Christof

2018-03-27

Many patients receiving cardiac resynchronization therapy (CRT) suffer from permanent atrial fibrillation (AF). Knowledge of the atrial rhythm is important to direct pharmacological or interventional treatment as well as maintaining AV-synchronous biventricular pacing if sinus rhythm can be restored. A single pass single-coil defibrillator lead with a floating atrial bipole has been shown to obtain reliable information about the atrial rhythm but has never been employed in a CRT-system. The purpose of this study was to assess the feasibility of implanting a single coil right ventricular ICD lead with a floating atrial bipole and the signal quality of atrial electrograms (AEGM) in CRT-defibrillator recipients with permanent AF. Seventeen patients (16 males, mean age 73 ± 6 years, mean EF 25 ± 5%) with permanent AF and an indication for CRT-defibrillator placement were implanted with a designated CRT-D system comprising a single pass defibrillator lead with a atrial floating bipole. They were followed-up for 103 ± 22 days using remote monitoring for AEGM transmission. All patients had at last one AEGM suitable for atrial rhythm diagnosis and of 100 AEGM 99% were suitable for visual atrial rhythm assessment. Four patients were discharged in sinus rhythm and one reverted to AF during follow-up. Atrial electrograms retrieved from a single-pass defibrillator lead with a floating atrial bipole can be reliably used for atrial rhythm diagnosis in CRT recipients with permanent AF. Hence, a single pass ventricular defibrillator lead with a floating bipole can be considered in this population. Copyright © 2018 Indian Heart Rhythm Society. Production and hosting by Elsevier B.V. All rights reserved.

Nano-imaging of single cells using STIM

Energy Technology Data Exchange (ETDEWEB)

Ren Minqin [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Department of Biochemistry, National University of Singapore (Singapore); Kan, J.A. van [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Bettiol, A.A. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Daina, Lim [Department of Anatomy, National University of Singapore (Singapore); Gek, Chan Yee [Department of Anatomy, National University of Singapore (Singapore); Huat, Bay Boon [Department of Anatomy, National University of Singapore (Singapore); Whitlow, H.J. [Department of Physics, University of Jyvaskyla, P.O. Box 35 (YFL), FIN-40014 (Finland); Osipowicz, T. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore); Watt, F. [Centre for Ion Beam Applications (CIBA), Department of Physics, National University of Singapore, Singapore 117542 (Singapore)]. E-mail: phywattf@nus.edu.sg

2007-07-15

Scanning transmission ion microscopy (STIM) is a technique which utilizes the energy loss of high energy (MeV) ions passing through a sample to provide structural images. In this paper, we have successfully demonstrated STIM imaging of single cells at the nano-level using the high resolution capability of the proton beam writing facility at the Centre for Ion Beam Applications, National University of Singapore. MCF-7 breast cancer cells (American Type Culture Collection [ATCC]) were seeded on to silicon nitride windows, backed by a Hamamatsu pin diode acting as a particle detector. A reasonable contrast was obtained using 1 MeV protons and excellent contrast obtained using 1 MeV alpha particles. In a further experiment, nano-STIM was also demonstrated using cells seeded on to the pin diode directly, and high quality nano-STIM images showing the nucleus and multiple nucleoli were extracted before the detector was significantly damaged.

Comparative Analysis of Single and Dual Irradiation Pass of Deep Burn High Temperature Reactor Scenario

International Nuclear Information System (INIS)

Jeong, Chang Joon; Jo, Chang Keun; Noh, Jae Man

2012-01-01

A concept of a deep-burn (DB) of trans uranic (TRU) elements in a high temperature reactor (HTR) has been proposed and studied with a single irradiation pass. However, there is still a significant amount of TRU after burn in an HTR. Therefore, it is necessary to burn more TRU in a fast reactor (FR) with repeated reprocessing such as a pyro-process. In this study, the fuel cycle calculations are performed and the results are compared for a singlepass DB-HHR scenario and a dual-pass sodium-cooled fast reactor (SFR) scenario. For the analysis, front-end and back-end parameters are compared. The calculations were performed by the DANESS (Dynamic Analysis of Nuclear Energy System Strategies), which is an integrated system dynamic fuel cycle analysis code

Direct pumping of ultrashort Ti:sapphire lasers by a frequency doubled diode laser

DEFF Research Database (Denmark)

Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika

2011-01-01

electro-optical efficiency of the diode laser. Autocorrelation measurements show that pulse widths of less than 20 fs can be expected with an average power of 52 mW when using our laser. These results indicate the high potential of direct diode laser pumped Ti: sapphire lasers to be used in applications....... When using our diode laser system, the optical conversion efficiencies from green to near-infrared light reduces to 75 % of the values achieved with the commercial pump laser. Despite this reduction the overall efficiency of the Ti: sapphire laser is still increased by a factor > 2 due to the superior...... like retinal optical coherence tomography (OCT) or pumping of photonic crystal fibers for CARS (coherent anti-stokes Raman spectroscopy) microscopy....

Note: Folded optical system for narrow forward looking probe

International Nuclear Information System (INIS)

Hou, Hsuan-Chao; Hah, Dooyoung; Kim, Jeonghwan; Feldman, M.

2014-01-01

An optical system is described in which a laser beam makes three passes through a single graded index lens, forming a focus along the optic axis. It has important applications in endoscopic probes, where the forward looking characteristic permits the avoidance of obstacles and the narrow structure makes it minimally invasive

System and method for high power diode based additive manufacturing

Science.gov (United States)

El-Dasher, Bassem S.; Bayramian, Andrew; Demuth, James A.; Farmer, Joseph C.; Torres, Sharon G.

2016-04-12

A system is disclosed for performing an Additive Manufacturing (AM) fabrication process on a powdered material forming a substrate. The system may make use of a diode array for generating an optical signal sufficient to melt a powdered material of the substrate. A mask may be used for preventing a first predetermined portion of the optical signal from reaching the substrate, while allowing a second predetermined portion to reach the substrate. At least one processor may be used for controlling an output of the diode array.

System and method for high power diode based additive manufacturing

Energy Technology Data Exchange (ETDEWEB)

El-Dasher, Bassem S.; Bayramian, Andrew; Demuth, James A.; Farmer, Joseph C.; Torres, Sharon G.

2018-01-02

A system is disclosed for performing an Additive Manufacturing (AM) fabrication process on a powdered material forming a substrate. The system may make use of a diode array for generating an optical signal sufficient to melt a powdered material of the substrate. A mask may be used for preventing a first predetermined portion of the optical signal from reaching the substrate, while allowing a second predetermined portion to reach the substrate. At least one processor may be used for controlling an output of the diode array.

Double Pass 595 nm Pulsed Dye Laser Does Not Enhance the Efficacy of Port Wine Stains Compared with Single Pass: A Randomized Comparison with Histological Examination.

Science.gov (United States)

Yu, Wenxin; Zhu, Jiafang; Wang, Lizhen; Qiu, Yajing; Chen, Yijie; Yang, Xi; Chang, Lei; Ma, Gang; Lin, Xiaoxi

2018-03-27

To compare the efficacy and safety of double-pass pulsed dye laser (DWL) and single-pass PDL (SWL) in treating virgin port wine stain (PWS). The increase in the extent of vascular damage attributed to the use of double-pass techniques for PWS remains inconclusive. A prospective, side-by-side comparison with a histological study for virgin PWS is still lacking. Twenty-one patients (11 flat PWS, 10 hypertrophic PWS) with untreated PWS underwent 3 treatments at 2-month intervals. Each PWS was divided into three treatment sites: SWL, DWL, and untreated control. Chromametric and visual evaluation of the efficacy and evaluation of side effects were conducted 3 months after final treatment. Biopsies were taken at the treated sites immediately posttreatment. Chromametric and visual evaluation suggested that DWL sites showed no significant improvement compared with SWL (p > 0.05) in treating PWS. The mean depth of photothermal damage to the vessels was limited to a maximum of 0.36-0.41 mm in both SWL and DWL sides. Permanent side effects were not observed in any patients. Double-pass PDL does not enhance PWS clearance. To improve the clearance of PWS lesions, either the depth of laser penetration should be increased or greater photothermal damage to vessels should be generated.

High-speed Light Peak optical link for high energy applications

Energy Technology Data Exchange (ETDEWEB)

Chang, F.X. [Academia Sinica, Taipei, Taiwan (China); Chiang, F. [FOCI Fiber Optic Comm., Inc., Hsinchu, Taiwan (China); Deng, B. [Hubei Polytechnic University, Huangshi, Hubei (China); Southern Methodist University, Dallas, TX (United States); Hou, J. [FOCI Fiber Optic Comm., Inc., Hsinchu, Taiwan (China); Hou, S., E-mail: suen@gate.sinica.edu.tw [Academia Sinica, Taipei, Taiwan (China); Liu, C.; Liu, T. [Southern Methodist University, Dallas, TX (United States); Teng, P.K. [Academia Sinica, Taipei, Taiwan (China); Wang, C.H. [National United University, Miaoli, Taiwan (China); Xu, T. [Shandong University, Ji' nan (China); Southern Methodist University, Dallas, TX (United States); Ye, J. [Southern Methodist University, Dallas, TX (United States)

2014-11-21

Optical links provide high speed data transmission with low mass fibers favorable for applications in high energy experiments. We report investigation of a compact Light Peak optical engine designed for data transmission at 4.8 Gbps. The module is assembled with bare die VCSEL, PIN diodes and a control IC aligned within a prism receptacle for light coupling to fiber ferrule. Radiation damage in the receptacle was examined with {sup 60}Co gamma ray. Radiation induced single event effects in the optical engine were studied with protons, neutrons and X-ray tests.

1.5 W green light generation by single-pass second harmonic generation of a single-frequency tapered diode laser

DEFF Research Database (Denmark)

Jensen, Ole Bjarlin; Andersen, Peter E.; Sumpf, Bernd

2009-01-01

More than 1.5 W of green light at 531 nm is generated by singlepass second harmonic generation in periodically poled MgO:LiNbO3. The pump laser is a high power tapered laser with a distributed Bragg reflector etched in the ridge section of the laser to provide wavelength selectivity. The output...... power of the single-frequency tapered laser is 9.3 W in continuous wave operation. A conversion efficiency of 18.5 % was achieved in the experiments....

20-meter underwater wireless optical communication link with 15 Gbps data rate

KAUST Repository

Shen, Chao

2016-10-24

The video streaming, data transmission, and remote control in underwater call for high speed (Gbps) communication link with a long channel length (∼10 meters). We present a compact and low power consumption underwater wireless optical communication (UWOC) system utilizing a 450-nm laser diode (LD) and a Si avalanche photodetector. With the LD operating at a driving current of 80 mA with an optical power of 51.3 mW, we demonstrated a high-speed UWOC link offering a data rate up to 2 Gbps over a 12-meter-long, and 1.5 Gbps over a record 20-meter-long underwater channel. The measured bit-error rate (BER) are 2.8 × 10-5, and 3.0 × 10-3, respectively, which pass well the forward error correction (FEC) criterion. © 2016 Optical Society of America.

20-meter underwater wireless optical communication link with 15 Gbps data rate

KAUST Repository

Shen, Chao; Guo, Yong; Oubei, Hassan M.; Ng, Tien Khee; Liu, Guangyu; Park, Kihong; Ho, Kang-Ting; Alouini, Mohamed-Slim; Ooi, Boon S.

2016-01-01

The video streaming, data transmission, and remote control in underwater call for high speed (Gbps) communication link with a long channel length (∼10 meters). We present a compact and low power consumption underwater wireless optical communication (UWOC) system utilizing a 450-nm laser diode (LD) and a Si avalanche photodetector. With the LD operating at a driving current of 80 mA with an optical power of 51.3 mW, we demonstrated a high-speed UWOC link offering a data rate up to 2 Gbps over a 12-meter-long, and 1.5 Gbps over a record 20-meter-long underwater channel. The measured bit-error rate (BER) are 2.8 × 10-5, and 3.0 × 10-3, respectively, which pass well the forward error correction (FEC) criterion. © 2016 Optical Society of America.

Optical levitation of microdroplet containing a single quantum dot

OpenAIRE

Minowa, Yosuke; Kawai, Ryoichi; Ashida, Masaaki

2014-01-01

We demonstrate the optical levitation or trapping in helium gas of a single quantum dot (QD) within a liquid droplet. Bright single photon emission from the levitated QD in the droplet was observed for more than 200 s. The observed photon count rates are consistent with the value theoretically estimated from the two-photon-action cross section. This paper presents the realization of an optically levitated solid-state quantum emitter. This paper was published in Optics Letters and is made avai...

Demonstration of frequency control and CW diode laser injection control of a titanium-doped sapphire ring laser with no internal optical elements

Science.gov (United States)

Bair, Clayton H.; Brockman, Philip; Hess, Robert V.; Modlin, Edward A.

1988-01-01

Theoretical and experimental frequency narrowing studies of a Ti:sapphire ring laser with no intracavity optical elements are reported. Frequency narrowing has been achieved using a birefringent filter between a partially reflecting reverse wave suppressor mirror and the ring cavity output mirror. Results of CW diode laser injection seeding are reported.

Monolithic Flexible Vertical GaN Light-Emitting Diodes for a Transparent Wireless Brain Optical Stimulator.

Science.gov (United States)

Lee, Han Eol; Choi, JeHyuk; Lee, Seung Hyun; Jeong, Minju; Shin, Jung Ho; Joe, Daniel J; Kim, DoHyun; Kim, Chang Wan; Park, Jung Hwan; Lee, Jae Hee; Kim, Daesoo; Shin, Chan-Soo; Lee, Keon Jae

2018-05-18

Flexible inorganic-based micro light-emitting diodes (µLEDs) are emerging as a significant technology for flexible displays, which is an important area for bilateral visual communication in the upcoming Internet of Things era. Conventional flexible lateral µLEDs have been investigated by several researchers, but still have significant issues of power consumption, thermal stability, lifetime, and light-extraction efficiency on plastics. Here, high-performance flexible vertical GaN light-emitting diodes (LEDs) are demonstrated by silver nanowire networks and monolithic fabrication. Transparent, ultrathin GaN LED arrays adhere to a human fingernail and stably glow without any mechanical deformation. Experimental studies provide outstanding characteristics of the flexible vertical μLEDs (f-VLEDs) with high optical power (30 mW mm -2 ), long lifetime (≈12 years), and good thermal/mechanical stability (100 000 bending/unbending cycles). The wireless light-emitting system on the human skin is successfully realized by transferring the electrical power f-VLED. Finally, the high-density GaN f-VLED arrays are inserted onto a living mouse cortex and operated without significant histological damage of brain. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Single crystal and optical ceramic multicomponent garnet scintillators: A comparative study

International Nuclear Information System (INIS)

Wu, Yuntao; Luo, Zhaohua; Jiang, Haochuan; Meng, Fang; Koschan, Merry; Melcher, Charles L.

2015-01-01

Multicomponent garnet materials can be made in optical ceramic as well as single crystal form due to their cubic crystal structure. In this work, high-quality Gd 3 Ga 3 Al 2 O 12 :0.2 at% Ce (GGAG:Ce) single crystal and (Gd,Lu) 3 Ga 3 Al 2 O 12 :1 at% Ce (GLuGAG:Ce) optical ceramics were fabricated by the Czochralski method and a combination of hot isostatic pressing (HIPing) and annealing treatment, respectively. Under optical and X-ray excitation, the GLuGAG:Ce optical ceramic exhibits a broad Ce 3+ transition emission centered at 550 nm, while the emission peak of the GGAG:Ce single crystal is centered at 540 nm. A self-absorption effect in GLuGAG:Ce optical ceramic results in this red-shift of the Ce 3+ emission peak compared to that in the GGAG:Ce single crystal. The light yield under 662 keV γ-ray excitation was 45,000±2500 photons/MeV and 48,200±2410 photons/MeV for the GGAG:Ce single crystal and GLuGAG:Ce optical ceramic, respectively. An energy resolution of 7.1% for 662 keV γ-rays was achieved in the GLuGAG:Ce optical ceramic with a Hamamatsu R6231 PMT, which is superior to the value of 7.6% for a GGAG:Ce single crystal. Scintillation decay time measurements under 137 Cs irradiation show two exponential decay components of 58 ns (47%) and 504 ns (53%) for the GGAG:Ce single crystal, and 84 ns (76%) and 148 ns (24%) for the GLuGAG:Ce optical ceramic. The afterglow level after X-ray cutoff in the GLuGAG:Ce optical ceramic is at least one order of magnitude lower than in the GGAG:Ce single crystal. - Highlights: • GGAG:Ce single crystal and GLuGAG:Ce optical ceramics were fabricated. • The light yield of both ceramic and crystal G(Lu)GAG:Ce reached the level of 45,000 photons/MeV. • GLuGAG:Ce optical ceramic showed a better energy resolution of 7.1% for 662 keV. • GLuGAG:Ce ceramics exhibited lower afterglow level than that of GGAG:Ce single crystals. • The possible optimization strategies for multicomponent aluminate garnets are discussed

Generation of a single-cycle optical pulse

International Nuclear Information System (INIS)

Shverdin, M.Y.; Walker, D.R.; Yavuz, D.D.; Yin, G.Y.; Harris, S.E.

2005-01-01

We make use of coherent control of four-wave mixing to the ultraviolet as a diagnostic and describe the generation of a periodic optical waveform where the spectrum is sufficiently broad that the envelope is approximately a single-cycle in length, and where the temporal shape of this envelope may be synthesized by varying the coefficients of a Fourier series. Specifically, using seven sidebands, we report the generation of a train of single-cycle optical pulses with a pulse width of 1.6 fs, a pulse separation of 11 fs, and a peak power of 1 MW

Implementation of dosimetric quality control on IMRT and VMAT treatments in radiotherapy using diodes

International Nuclear Information System (INIS)

Gonzales, A.; Garcia, B.; Ramirez, J.; Marquina, J.

2014-08-01

To implement quality control of IMRT and VMAT treatments Rapid Arc radiotherapy using diode array. Were tested 90 patients with IMRT and VMAT Rapid Arc, comparing the planned dose to the dose administered, used the Map-Check-2 and Arc-Check of Sun Nuclear, they using the gamma factor for calculating and using comparison parameters 3% / 3m m. The statistic shows that the quality controls of the 90 patients analyzed, presented a percentage of diodes that pass the test between 96,7% and 100,0% of the irradiated diodes. Implemented in Clinical ALIADA Oncologia Integral, the method for quality control of IMRT and VMAT treatments Rapid Arc radiotherapy using diode array. (Author)

Passive mode locking in a multisegment laser diode with an external cavity

International Nuclear Information System (INIS)

Andreeva, E V; Magnitskiy, Sergey A; Koroteev, Nikolai I; Salik, E; Feinberg, J; Starodubov, D S; Shramenko, M V; Yakubovich, S D

1999-01-01

The structure and operating conditions of multisegment laser (GaAl)As diodes with passive locking of the modes of an external cavity (bulk and fibre) were optimised. Regular trains of optical single pulses of picosecond duration were generated in a spectral range 850 - 860 nm. The peak power of these pulses was several watts and the repetition rate was near 1 GHz. Under certain conditions these output pulses were linearly chirped, i.e. they were suitable for subpicosecond time compression. Laboratory prototypes were made of miniature light-emitting modules with these characteristics. (lasers)

Extending Single-Molecule Microscopy Using Optical Fourier Processing

Science.gov (United States)

2015-01-01

This article surveys the recent application of optical Fourier processing to the long-established but still expanding field of single-molecule imaging and microscopy. A variety of single-molecule studies can benefit from the additional image information that can be obtained by modulating the Fourier, or pupil, plane of a widefield microscope. After briefly reviewing several current applications, we present a comprehensive and computationally efficient theoretical model for simulating single-molecule fluorescence as it propagates through an imaging system. Furthermore, we describe how phase/amplitude-modulating optics inserted in the imaging pathway may be modeled, especially at the Fourier plane. Finally, we discuss selected recent applications of Fourier processing methods to measure the orientation, depth, and rotational mobility of single fluorescent molecules. PMID:24745862

Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

CERN Document Server

Morgado, J; Charas, A; Matos, M; Alcacer, L; Cacialli, F

2003-01-01

We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide.

Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes

International Nuclear Information System (INIS)

Morgado, Jorge; Barbagallo, Nunzio; Charas, Ana; Matos, Manuel; Alcacer, Luis; Cacialli, Franco

2003-01-01

We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide

An analytical-numerical approach for parameter determination of a five-parameter single-diode model of photovoltaic cells and modules

Science.gov (United States)

Hejri, Mohammad; Mokhtari, Hossein; Azizian, Mohammad Reza; Söder, Lennart

2016-04-01

Parameter extraction of the five-parameter single-diode model of solar cells and modules from experimental data is a challenging problem. These parameters are evaluated from a set of nonlinear equations that cannot be solved analytically. On the other hand, a numerical solution of such equations needs a suitable initial guess to converge to a solution. This paper presents a new set of approximate analytical solutions for the parameters of a five-parameter single-diode model of photovoltaic (PV) cells and modules. The proposed solutions provide a good initial point which guarantees numerical analysis convergence. The proposed technique needs only a few data from the PV current-voltage characteristics, i.e. open circuit voltage Voc, short circuit current Isc and maximum power point current and voltage Im; Vm making it a fast and low cost parameter determination technique. The accuracy of the presented theoretical I-V curves is verified by experimental data.

Novel microwave photonic fractional Hilbert transformer using a ring resonator-based optical all-pass filter.

Science.gov (United States)

Zhuang, Leimeng; Khan, Muhammad Rezaul; Beeker, Willem; Leinse, Arne; Heideman, René; Roeloffzen, Chris

2012-11-19

We propose and demonstrate a novel wideband microwave photonic fractional Hilbert transformer implemented using a ring resonator-based optical all-pass filter. The full programmability of the ring resonator allows variable and arbitrary fractional order of the Hilbert transformer. The performance analysis in both frequency and time domain validates that the proposed implementation provides a good approximation to an ideal fractional Hilbert transformer. This is also experimentally verified by an electrical S21 response characterization performed on a waveguide realization of a ring resonator. The waveguide-based structure allows the proposed Hilbert transformer to be integrated together with other building blocks on a photonic integrated circuit to create various system-level functionalities for on-chip microwave photonic signal processors. As an example, a circuit consisting of a splitter and a ring resonator has been realized which can perform on-chip phase control of microwave signals generated by means of optical heterodyning, and simultaneous generation of in-phase and quadrature microwave signals for a wide frequency range. For these functionalities, this simple and on-chip solution is considered to be practical, particularly when operating together with a dual-frequency laser. To our best knowledge, this is the first-time on-chip demonstration where ring resonators are employed to perform phase control functionalities for optical generation of microwave signals by means of optical heterodyning.

2.3 Gbit/s underwater wireless optical communications using directly modulated 520 nm laser diode

KAUST Repository

Oubei, Hassan M.

2015-07-30

We experimentally demonstrate a record high-speed underwater wireless optical communication (UWOC) over 7 m distance using on-off keying non-return-to-zero (OOK-NRZ) modulation scheme. The communication link uses a commercial TO-9 packaged pigtailed 520 nm laser diode (LD) with 1.2 GHz bandwidth as the optical transmitter and an avalanche photodiode (APD) module as the receiver. At 2.3 Gbit/s transmission, the measured bit error rate of the received data is 2.23×10−4, well below the forward error correction (FEC) threshold of 2×10−3 required for error-free operation. The high bandwidth of the LD coupled with high sensitivity APD and optimized operating conditions is the key enabling factor in obtaining high bit rate transmission in our proposed system. To the best of our knowledge, this result presents the highest data rate ever achieved in UWOC systems thus far.

Photoacoustic Soot Spectrometer (PASS) Instrument Handbook

Energy Technology Data Exchange (ETDEWEB)

Dubey, M [Los Alamos National Laboratory; Springston, S [Brookhaven National Laboratory; Koontz, A [Pacific Northwest National Laboratory; Aiken, A [Los Alamos National Laboratory

2013-01-17

The photoacoustic soot spectrometer (PASS) measures light absorption by aerosol particles. As the particles pass through a laser beam, the absorbed energy heats the particles and in turn the surrounding air, which sets off a pressure wave that can be detected by a microphone. The PASS instruments deployed by ARM can also simultaneously measure the scattered laser light at three wavelengths and therefore provide a direct measure of the single-scattering albedo. The Operator Manual for the PASS-3100 is included here with the permission of Droplet Measurement Technologies, the instrument’s manufacturer.

Development of Schottky diode detectors at Research Institute of Electrical Communication, Tohoku University

International Nuclear Information System (INIS)

Mizuno, K.; Ono, S.; Suzuki, T.; Daiku, Y.

1982-01-01

Schottky diode detectors are widely used as fast, sensitive submillimeter detectors in plasma physics, radio astronomy, frequency standards and so on. In this paper, the research on submillimeter Schottky diodes at Tohoku University is described. A brief description is given on the theoretical examination of diode parameters for video detection in design and on the fabrication of n/n + GaAs Schottky diode chips. Antennas for Schottky barrier diodes are discussed. Three types of antenna structures have been proposed, and used for whisker-contacted Schottky diodes so far. These are compared with each other for their frequency response and gain. The bicone type antenna is promising because of its larger frequency response, but the optimum design for this type of antenna has not yet sufficiently been obtained. As the application of Schottky barrier diodes, the intensity modulation of submillimeter laser and a quasi-optically coupled harmonic mixer have been studied. The modulation degree of about 4 % for HCN laser output has been so far obtained at the maximum modulation frequency of 2 GHz. Since 1976, a quasi-optically coupled harmonic mixer has been used with a Schottky diode in harmonic mixing between microwaves, millimeter waves, and submillimeter waves. (Wakatsuki, Y.)

Optical frequency upconversion technique for transmission of wireless MIMO-type signals over optical fiber.

Science.gov (United States)

Shaddad, R Q; Mohammad, A B; Al-Gailani, S A; Al-Hetar, A M

2014-01-01

The optical fiber is well adapted to pass multiple wireless signals having different carrier frequencies by using radio-over-fiber (ROF) technique. However, multiple wireless signals which have the same carrier frequency cannot propagate over a single optical fiber, such as wireless multi-input multi-output (MIMO) signals feeding multiple antennas in the fiber wireless (FiWi) system. A novel optical frequency upconversion (OFU) technique is proposed to solve this problem. In this paper, the novel OFU approach is used to transmit three wireless MIMO signals over a 20 km standard single mode fiber (SMF). The OFU technique exploits one optical source to produce multiple wavelengths by delivering it to a LiNbO3 external optical modulator. The wireless MIMO signals are then modulated by LiNbO3 optical intensity modulators separately using the generated optical carriers from the OFU process. These modulators use the optical single-sideband with carrier (OSSB+C) modulation scheme to optimize the system performance against the fiber dispersion effect. Each wireless MIMO signal is with a 2.4 GHz or 5 GHz carrier frequency, 1 Gb/s data rate, and 16-quadrature amplitude modulation (QAM). The crosstalk between the wireless MIMO signals is highly suppressed, since each wireless MIMO signal is carried on a specific optical wavelength.

Collimating lens for light-emitting-diode light source based on non-imaging optics.

Science.gov (United States)

Wang, Guangzhen; Wang, Lili; Li, Fuli; Zhang, Gongjian

2012-04-10

A collimating lens for a light-emitting-diode (LED) light source is an essential device widely used in lighting engineering. Lens surfaces are calculated by geometrical optics and nonimaging optics. This design progress does not rely on any software optimization and any complex iterative process. This method can be used for any type of light source not only Lambertian. The theoretical model is based on point source. But the practical LED source has a certain size. So in the simulation, an LED chip whose size is 1 mm*1 mm is used to verify the feasibility of the model. The mean results show that the lenses have a very compact structure and good collimating performance. Efficiency is defined as the ratio of the flux in the illuminated plane to the flux from LED source without considering the lens material transmission. Just investigating the loss in the designed lens surfaces, the two types of lenses have high efficiencies of more than 90% and 99%, respectively. Most lighting area (possessing 80% flux) radii are no more than 5 m when the illuminated plane is 200 m away from the light source.

Analyzing degradation effects of organic light-emitting diodes via transient optical and electrical measurements

Energy Technology Data Exchange (ETDEWEB)

Schmidt, Tobias D., E-mail: Tobias.Schmidt@physik.uni-augsburg.de; Jäger, Lars; Brütting, Wolfgang, E-mail: Wolfgang.Bruetting@physik.uni-augsburg.de [Institute of Physics, University of Augsburg, Augsburg (Germany); Noguchi, Yutaka [Department of Electronics and Bioinformatics, School of Science and Technology, Meiji University, Kawasaki (Japan); Center of Frontier Science, Chiba University, Chiba (Japan); Ishii, Hisao [Center of Frontier Science, Chiba University, Chiba (Japan)

2015-06-07

Although the long-term stability of organic light-emitting diodes (OLEDs) under electrical operation made significant progress in recent years, the fundamental underlying mechanisms of the efficiency decrease during operation are not well understood. Hence, we present a comprehensive degradation study of an OLED structure comprising the well-known green phosphorescent emitter Ir(ppy){sub 3}. We use transient methods to analyze both electrical and optical changes during an accelerated aging protocol. Combining the results of displacement current measurements with time-resolved investigation of the excited states lifetimes of the emitter allows for a correlation of electrical (e.g., increase of the driving voltage due to trap formation) and optical (e.g., decrease of light-output) changes induced by degradation. Therewith, it is possible to identify two mechanisms resulting in the drop of the luminance: a decrease of the radiative quantum efficiency of the emitting system due to triplet-polaron-quenching at trapped charge carriers and a modified charge carrier injection and transport, as well as trap-assisted non-radiative recombination resulting in a deterioration of the charge carrier balance of the device.

Hyperchaotic Dynamics for Light Polarization in a Laser Diode

Science.gov (United States)

Bonatto, Cristian

2018-04-01

It is shown that a highly randomlike behavior of light polarization states in the output of a free-running laser diode, covering the whole Poincaré sphere, arises as a result from a fully deterministic nonlinear process, which is characterized by a hyperchaotic dynamics of two polarization modes nonlinearly coupled with a semiconductor medium, inside the optical cavity. A number of statistical distributions were found to describe the deterministic data of the low-dimensional nonlinear flow, such as lognormal distribution for the light intensity, Gaussian distributions for the electric field components and electron densities, Rice and Rayleigh distributions, and Weibull and negative exponential distributions, for the modulus and intensity of the orthogonal linear components of the electric field, respectively. The presented results could be relevant for the generation of single units of compact light source devices to be used in low-dimensional optical hyperchaos-based applications.

Modeling of thermal and optical effects in dental pulp during the irradiation with neodymium and diode lasers

International Nuclear Information System (INIS)

Farhat, Patricia Bahls de Almeida

2003-01-01

During the development of applications of high intensity lasers in the enamel and dentine, adverse thermal effects into the entire dental structure, including the pulp, must be verified. The measurement of the temperature in the intact pulp, however, is not a solved problem. For this purpose, models have been used frequently, using extracted teeth, with pulpal cavities filled with materials that simulate only thermal properties of the pulp. Current models, however, do not simulate optical properties of the pulp, not taking the remaining radiation in the pulp chamber into account. The aim of this study was to verify if the remaining radiation from neodymium and diode lasers that reach the pulp chamber, at the models using extracted bovine teeth, can cause local thermal effects. For this purpose, two models were developed, using extracted bovine teeth with their pulp chambers filled with water (simulating pulp thermal characteristics) without (model 1) and with (model 2) an optical absorbent. Models were radiated with 1 W. The obtained results show that, for both lasers, the temperature rise in model 2 pulp chamber is: up to 11 % higher than in the model 1 when the enamel is radiated; and up to 37% higher than in the model 1 when dentine is radiated (1 mm from the pulp), indicating that the level of the remaining radiation is relevant for the construction of models excited by the neodymium and diode lasers. (author)

Diode lasers and arrays

International Nuclear Information System (INIS)

Streifer, W.

1988-01-01

This paper discusses the principles of operation of III-V semiconductor diode lasers, the use of distributed feedback, and high power laser arrays. The semiconductor laser is a robust, miniature, versatile device, which directly converts electricity to light with very high efficiency. Applications to pumping solid-state lasers and to fiber optic and point-to-point communications are reviewed

Development of diode-pumped solid-state laser HALNA for fusion reactor driver

International Nuclear Information System (INIS)

Kawashima, Toshiyuki; Kanabe, Tadashi; Matsumoto, Osamu

2005-01-01

The diode-pumped slab laser for inertial fusion energy driver has been demonstrated, which produces the 1053-nm output energy of 10 J at 10 Hz. The glass slab laser amplifier has been pumped by quasi-CW 290 kW AlGaAs laser-diode arrays at 803 nm. The optical system can compensate for thermal effects by use of zig-zag optical propagation, image-relayed telescope, and 45deg Faraday rotator. The output energy of 10.6 J at 1 Hz with the optical to optical conversion efficiency of 19.9% has been successfully obtained. Also the 10 Hz operation has been performed with a 5.1 J output energy. (author)

Quaternary InGaAsSb Thermophotovoltaic Diodes

International Nuclear Information System (INIS)

MW Dashiell; JF Beausang; H Ehsani; GJ Nichols; DM Depoy; LR Danielson; P Talamo; KD Rahner; EJ Brown; SR Burger; PM Foruspring; WF Topper; PF Baldasaro; CA Wang; R Huang; M Connors; G Turner; Z Shellenbarger; G Taylor; J Li; R Martinelli; D Donetski; S Anikeev; G Belenky; S Luryi

2006-01-01

In x Ga 1-x As y Sb 1-y thermophotovoltaic (TPV) diodes were grown lattice-matched to GaSb substrates by Metal Organic Vapor Phase Epitaxy (MOVPE) in the bandgap range of E G = 0.5 to 0.6eV. InGaAsSb TPV diodes, utilizing front-surface spectral control filters, are measured with thermal-to-electric conversion efficiency and power density of η TPV = 19.7% and PD =0.58 W/cm 2 respectively for a radiator temperature of T radiator = 950 C, diode temperature of T diode = 27 C, and diode bandgap of E G = 0.53eV. Practical limits to TPV energy conversion efficiency are established using measured recombination coefficients and optical properties of front surface spectral control filters, which for 0.53eV InGaAsSb TPV energy conversion is η TPV = 28% and PD = 0.85W/cm 2 at the above operating temperatures. The most severe performance limits are imposed by (1) diode open-circuit voltage (VOC) limits due to intrinsic Auger recombination and (2) parasitic photon absorption in the inactive regions of the module. Experimentally, the diode V OC is 15% below the practical limit imposed by intrinsic Auger recombination processes. Analysis of InGaAsSb diode electrical performance vs. diode architecture indicate that the V OC and thus efficiency is limited by extrinsic recombination processes such as through bulk defects

Optical, Electrical and Magnetic Studies of Pi-Conjugated Organic Semiconductor Systems

Energy Technology Data Exchange (ETDEWEB)

Vardeny, Zeev Valentine [Univ. of Utah, Salt Lake City, UT (United States)

2016-09-15

Over the duration of this grant our group has studied the transient and cw optical response of various π-conjugated polymers, oligomers, single crystals, fullerene molecules and blends of organic donor-acceptor molecules. We have been also involved in complementary experiments such as magneto-optical studies and spin-physics. We have advanced the field of photophysics of these materials by providing information on their excited state energies and primodal and long-lived photoexcitations such as singlet excitons, triplet excitons, polaron-pairs, excimers and exciplexes. We also fabricated various organic optoelectronic devices such as organic light emitting diodes (OLED), electrochemical cells, organic diodes, organic spin-valves (OSV), and organic photovoltaic (OPV) solar cells. These devices benefited the society in terms of cheap and energy saving illumination, as well as harnessing the solar energy.

Non-linear optics for the final focus of the single-pass-collider

International Nuclear Information System (INIS)

Brown, K.L.; Spencer, J.E.

1981-02-01

The purpose of the final focus system (FFS) is to demagnify the beam envelope in the Collider arc lattice to a size suitable for beam collisions at the interaction region. The final spot size is determined by the beam emittance, the beta function β* at the IR, the momentum spread in the beam, and the quality of the FFS optics. In particular, if the focusing system is not chromatically corrected, the momentum dispersion in the beam can lead to a substantial degradation in the quality of the final focus. The objective is to design a FFS for 50 GeV/c within approx. 100 meters having an IR spot size sigma/sub xy/ of approximately 2 μm for a beam emittance of epsilon = 3 x 10 -10 m-rad and a momentum spread of delta = +-0.5%. This requires a β/sub x,y/ equal to or less than 1 cm. This report considers the problems encountered in the design of a final focus system that will reliably provide the desired beam size for collisions

Highly-reliable laser diodes and modules for spaceborne applications

Science.gov (United States)

Deichsel, E.

2017-11-01

Laser applications become more and more interesting in contemporary missions such as earth observations or optical communication in space. One of these applications is light detection and ranging (LIDAR), which comprises huge scientific potential in future missions. The Nd:YAG solid-state laser of such a LIDAR system is optically pumped using 808nm emitting pump sources based on semiconductor laser-diodes in quasi-continuous wave (qcw) operation. Therefore reliable and efficient laser diodes with increased output powers are an important requirement for a spaceborne LIDAR-system. In the past, many tests were performed regarding the performance and life-time of such laser-diodes. There were also studies for spaceborne applications, but a test with long operation times at high powers and statistical relevance is pending. Other applications, such as science packages (e.g. Raman-spectroscopy) on planetary rovers require also reliable high-power light sources. Typically fiber-coupled laser diode modules are used for such applications. Besides high reliability and life-time, designs compatible to the harsh environmental conditions must be taken in account. Mechanical loads, such as shock or strong vibration are expected due to take-off or landing procedures. Many temperature cycles with high change rates and differences must be taken in account due to sun-shadow effects in planetary orbits. Cosmic radiation has strong impact on optical components and must also be taken in account. Last, a hermetic sealing must be considered, since vacuum can have disadvantageous effects on optoelectronics components.

Transmission system for distribution of video over long-haul optical point-to-point links using a microwave photonic filter in the frequency range of 0.01-10 GHz

Science.gov (United States)

Zaldívar Huerta, Ignacio E.; Pérez Montaña, Diego F.; Nava, Pablo Hernández; Juárez, Alejandro García; Asomoza, Jorge Rodríguez; Leal Cruz, Ana L.

2013-12-01

We experimentally demonstrate the use of an electro-optical transmission system for distribution of video over long-haul optical point-to-point links using a microwave photonic filter in the frequency range of 0.01-10 GHz. The frequency response of the microwave photonic filter consists of four band-pass windows centered at frequencies that can be tailored to the function of the spectral free range of the optical source, the chromatic dispersion parameter of the optical fiber used, as well as the length of the optical link. In particular, filtering effect is obtained by the interaction of an externally modulated multimode laser diode emitting at 1.5 μm associated to the length of a dispersive optical fiber. Filtered microwave signals are used as electrical carriers to transmit TV-signal over long-haul optical links point-to-point. Transmission of TV-signal coded on the microwave band-pass windows located at 4.62, 6.86, 4.0 and 6.0 GHz are achieved over optical links of 25.25 km and 28.25 km, respectively. Practical applications for this approach lie in the field of the FTTH access network for distribution of services as video, voice, and data.

Ion diode diagnostics to resolve beam quality issues

Energy Technology Data Exchange (ETDEWEB)

Bluhm, H; Buth, L; Hoppe, P [Forschungszentrum Karlsruhe (Germany). Institut fuer Neutronenphysik und Reaktortechnik; and others

1997-12-31

Various diagnostic methods and instruments are under development at the Forschungszentrum Karlsruhe to measure important physical quantities in the accelerating gap of high power diodes on KALIF with a high spatial and temporal resolution. The methods include optical spectroscopy, refractive index measurements, dispersion interferometry, and high resolution energy analysis. The setup of these diagnostic tools and the first results obtained for applied and self-magnetically insulated diodes are presented. (author). 6 figs., 5 refs.

High-temperature current conduction through three kinds of Schottky diodes

International Nuclear Information System (INIS)

Fei, Li; Xiao-Ling, Zhang; Yi, Duan; Xue-Song, Xie; Chang-Zhi, Lü

2009-01-01

Fundamentals of the Schottky contacts and the high-temperature current conduction through three kinds of Schottky diodes are studied. N-Si Schottky diodes, GaN Schottky diodes and AlGaN/GaN Schottky diodes are investigated by I–V–T measurements ranging from 300 to 523 K. For these Schottky diodes, a rise in temperature is accompanied with an increase in barrier height and a reduction in ideality factor. Mechanisms are suggested, including thermionic emission, field emission, trap-assisted tunnelling and so on. The most remarkable finding in the present paper is that these three kinds of Schottky diodes are revealed to have different behaviours of high-temperature reverse currents. For the n-Si Schottky diode, a rise in temperature is accompanied by an increase in reverse current. The reverse current of the GaN Schottky diode decreases first and then increases with rising temperature. The AlGaN/GaN Schottky diode has a trend opposite to that of the GaN Schottky diode, and the dominant mechanisms are the effects of the piezoelectric polarization field and variation of two-dimensional electron gas charge density. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Electrically injected GaAsBi/GaAs single quantum well laser diodes

Directory of Open Access Journals (Sweden)

Juanjuan Liu

2017-11-01

Full Text Available We present electrically injected GaAs/GaAsBi single quantum well laser diodes (LDs emitting at a record long wavelength of 1141 nm at room temperature grown by molecular beam epitaxy. The LDs have excellent device performances with internal quantum efficiency of 86%, internal loss of 10 cm-1 and transparency current density of 196 A/cm2. The LDs can operate under continuous-wave mode up to 273 K. The characteristic temperature are extracted to be 125 K in the temperature range of 77∼150 K, and reduced to 90 K in the range of 150∼273 K. The temperature coefficient of 0.3 nm/K is extracted in the temperature range of 77∼273 K.

High power CW output from low confinement asymmetric structure diode laser

NARCIS (Netherlands)

Iordache, G.; Buda, M.; Acket, G.A.; Roer, van de T.G.; Kaufmann, L.M.F.; Karouta, F.; Jagadish, C.; Tan, H.H.

1999-01-01

High power continuous wave output from diode lasers using low loss, low confinement, asymmetric structures is demonstrated. An asymmetric structure with an optical trap layer was grown by metal organic vapour phase epitaxy. Gain guided 50 µm wide stripe 1-3 mm long diode lasers were studied. 1.8 W

III-nitride Photonic Integrated Circuit: Multi-section GaN Laser Diodes for Smart Lighting and Visible Light Communication

KAUST Repository

Shen, Chao

2017-04-01

The past decade witnessed the rapid development of III-nitride light-emitting diodes (LEDs) and laser diodes (LDs), for smart lighting, visible-light communication (VLC), optical storage, and internet-of-things. Recent studies suggested that the GaN-based LDs, which is free from efficiency droop, outperform LEDs as a viable high-power light source. Conventionally, the InGaN-based LDs are grown on polar, c-plane GaN substrates. However, a relatively low differential gain limited the device performance due to a significant polarization field in the active region. Therefore, the LDs grown on nonpolar m-plane and semipolar (2021)-plane GaN substrates are posed to deliver high-efficiency owing to the entirely or partially eliminated polarization field. To date, the smart lighting and VLC functionalities have been demonstrated based on discrete devices, such as LDs, transverse-transmission modulators, and waveguide photodetectors. The integration of III-nitride photonic components, including the light emitter, modulator, absorber, amplifier, and photodetector, towards the realization of III-nitride photonic integrated circuit (PIC) offers the advantages of small-footprint, high-speed, and low power consumption, which has yet to be investigated. This dissertation presents the design, fabrication, and characterization of the multi-section InGaN laser diodes with integrated functionalities on semipolar (2021)-plane GaN substrates for enabling such photonic integration. The blue-emitting integrated waveguide modulator-laser diode (IWM-LD) exhibits a high modulation efficiency of 2.68 dB/V. A large extinction ratio of 11.3 dB is measured in the violet-emitting IWM-LD. Utilizing an integrated absorber, a high optical power (250mW), droop-free, speckle-free, and large modulation bandwidth (560MHz) blue-emitting superluminescent diode is reported. An integrated short-wavelength semiconductor optical amplifier with the laser diode at ~404 nm is demonstrated with a large gain of 5

Multispectral optical tweezers for molecular diagnostics of single biological cells

Science.gov (United States)

Butler, Corey; Fardad, Shima; Sincore, Alex; Vangheluwe, Marie; Baudelet, Matthieu; Richardson, Martin

2012-03-01

Optical trapping of single biological cells has become an established technique for controlling and studying fundamental behavior of single cells with their environment without having "many-body" interference. The development of such an instrument for optical diagnostics (including Raman and fluorescence for molecular diagnostics) via laser spectroscopy with either the "trapping" beam or secondary beams is still in progress. This paper shows the development of modular multi-spectral imaging optical tweezers combining Raman and Fluorescence diagnostics of biological cells.

Intensity noise properties of Nd:YVO 4 microchip lasers pumped with an amplitude squeezed diode laser

Science.gov (United States)

Becher, C.; Boller, K.-J.

1998-02-01

We report on intensity noise measurements of single-frequency Nd:YVO 4 microchip lasers optically pumped with amplitude squeezed light from an injection-locked diode laser. Calibrated homodyne measurements show a minimum intensity noise of 10.1 dB above the SQL at a frequency of 100 kHz. The measured intensity noise spectra are described with high accuracy by a theoretical model based on the quantum mechanical Langevin rate equations, including classical and quantum noise sources.

V-shaped resonators for addition of broad-area laser diode arrays

Science.gov (United States)

Liu, Bo; Liu, Yun; Braiman, Yehuda Y.

2012-12-25

A system and method for addition of broad-area semiconductor laser diode arrays are described. The system can include an array of laser diodes, a V-shaped external cavity, and grating systems to provide feedback for phase-locking of the laser diode array. A V-shaped mirror used to couple the laser diode emissions along two optical paths can be a V-shaped prism mirror, a V-shaped stepped mirror or include multiple V-shaped micro-mirrors. The V-shaped external cavity can be a ring cavity. The system can include an external injection laser to further improve coherence and phase-locking.

Internal optical losses in very thin cw heterojunction laser diodes

International Nuclear Information System (INIS)

Butler, J.K.; Kressel, H.; Ladany, I.

1975-01-01

Theoretical calculations are presented showing the relationship between the internal laser absorption and structural parameters appropriate for cw room-temperature lasers. These diodes have submicron-thick recombination regions, and very small spacings between the heat sink and the recombination region to minimize the thermal resistance. The optical loss is shown to be strongly dependent on the degree of radiation confinement to the active region. In particular, absorption in the surface GaAs layer providing the ohmic contact becomes very significant when the intermediate (AlGa)As layer is reduced below about 1 μm. It is further shown that excessive penetration into the GaAs regions gives rise to anomalies in the far-field radiation profiles in the direction perpendicular to the junction plane. Proper design of the internal structure of the laser avoids large increases of the threshold current density as well as large decreases in the external differential quantum efficiency from interaction with the contact layer. The design curves presented can be used to predict the gain required at threshold for a broad range of structural parameters of interest in low-threshold laser design

Optically pumped polarized alkali atomic beams and targets

International Nuclear Information System (INIS)

Anderson, L.W.

1984-01-01

The optical pumping of 23 Na and 6 Li atomic beams is discussed. Experiments on the optical pumping of 23 Na atomic beams using either a single mode dye laser followed by a double passed acousto-optic modulator or a multimode dye laser are reported. The optical pumping of a 23 Na vapor target for use in a polarized H - ion source is discussed. Results on the use of viton as a wall coating with a long relaxation time are reported. 31 references, 6 figures, 3 tables

A Study of the interaction of radiation and semiconductor lasers: an analysis of transient and permanent effects induced on edge emitting and vertical cavity surface emitting laser diodes

International Nuclear Information System (INIS)

Pailharey, Eric

2000-01-01

The behavior of laser diodes under transient environment is presented in this work. The first section describes the basic phenomena of radiation interaction with matter. The radiative environments, the main characteristics of laser diodes and the research undertaken on the subject are presented and discussed. The tests on 1300 nm edge emitting laser diode are presented in the second section. The response to a transient ionizing excitation is explored using a 532 nm laser beam. The time of return to steady state after the perturbation is decomposed into several steps: decrease of the optical power during excitation, turn-on delay, relaxation oscillations and optical power offset. Their origins are analyzed using the device structure. To include all the phenomena in a numerical simulation of the device, an individual study of low conductivity materials used for the lateral confinement of the current density is undertaken. The effects of a single particle traversing the optical cavity and an analysis of permanent damages induced by neutrons are also determined. In the last section, 850 nm vertical cavity surface emitting laser diodes (VCSEL) are studied. The behavior of these devices which performances are in constant evolution, is investigated as a function of both temperature and polarization. Then VCSEL are submitted to transient ionizing irradiation and their responses are compared to those of edge emitting diodes. When proton implantation is used in the process, we observe the same behavior for both technologies. VCSEL were submitted to neutron fluence and we have studied the influence of the damages on threshold current, emission patterns and maximum of optical power. (author) [fr

Photo-acoustic sensor based on an inexpensive piezoelectric film transducer and an amplitude-stabilized single-mode external cavity diode laser for in vitro measurements of glucose concentration

Science.gov (United States)

Bayrakli, Ismail; Erdogan, Yasar Kemal

2018-06-01

The present paper focuses on development of a compact photo-acoustic sensor using inexpensive components for glucose analysis. An amplitude-stabilized wavelength-tunable single-mode external cavity diode laser operating around 1050 nm was realized and characterized for the use of laser beam as an excitation light source. In the established setup, a fine tuning range of 9 GHz was achieved. The glucose solution was obtained by diluting D-glucose in sterile water. The acoustic signal generated by the optical excitation was detected via a chip piezoelectric film transducer. A detection limit of 50 mM (900 mg/dl) was achieved. The device may be of great interest for its applications in medicine and health monitoring. The sensor is promising for non-invasive in vivo glucose measurements from interstitial fluid.

Kilowatt average power 100 J-level diode pumped solid state laser

Czech Academy of Sciences Publication Activity Database

Mason, P.; Divoký, Martin; Ertel, K.; Pilař, Jan; Butcher, T.; Hanuš, Martin; Banerjee, S.; Phillips, J.; Smith, J.; De Vido, M.; Lucianetti, Antonio; Hernandez-Gomez, C.; Edwards, C.; Mocek, Tomáš; Collier, J.

2017-01-01

Roč. 4, č. 4 (2017), s. 438-439 ISSN 2334-2536 R&D Projects: GA MŠk LO1602; GA MŠk LM2015086 Institutional support: RVO:68378271 Keywords : diode-pumped * solid state * laser Subject RIV: BH - Optics, Masers, Lasers OBOR OECD: Optics (including laser optics and quantum optics) Impact factor: 7.727, year: 2016

Modulation of distributed feedback (DFB) laser diode with the autonomous Chua's circuit: Theory and experiment

Science.gov (United States)

Talla Mbé, Jimmi Hervé; Woafo, Paul

2018-03-01

We report on a simple way to generate complex optical waveforms with very cheap and accessible equipments. The general idea consists in modulating a laser diode with an autonomous electronic oscillator, and in the case of this study, we use a distributed feedback (DFB) laser diode pumped with an electronic Chua's circuit. Based on the adiabatic P-I characteristics of the laser diode at low frequencies, we show that when the total pump is greater than the laser threshold, it is possible to convert the electrical waveforms of the Chua's circuit into optical carriers. But, if that is not the case, the on-off dynamical behavior of the laser permits to obtain many other optical waveform signals, mainly pulses. Our numerical results are consistent with experimental measurements. The work presents the advantage of extending the range of possible chaotic dynamics of the laser diodes in the time domains (millisecond) where it is not usually expected with conventional modulation techniques. Moreover, this new technique of laser diodes modulation brings a general benefit in the physical equipment, reduces their cost and congestion so that, it can constitute a step towards photonic integrated circuits.

Trap-induced photoconductivity in singlet fission pentacene diodes

Energy Technology Data Exchange (ETDEWEB)

Qiao, Xianfeng, E-mail: qiaoxianfeng@hotmail.com; Zhao, Chen; Chen, Bingbing; Luan, Lin [WuHan National Laboratory for Optoelectronics and School of Optical and Electronic Information, Huazhong University of Science and Technology, Wu Han 430074 (China)

2014-07-21

This paper reports a trap-induced photoconductivity in ITO/pentacene/Al diodes by using current-voltage and magneto-conductance measurements. The comparison of photoconductivity between pentacene diodes with and without trap clearly shows that the traps play a critical role in generating photoconductivity. It shows that no observable photoconductivity is detected for trap-free pentacene diodes, while significant photoconductivity is observed in diodes with trap. This is because the initial photogenerated singlet excitons in pentacene can rapidly split into triplet excitons with higher binding energy prior to dissociating into free charge carriers. The generated triplet excitons react with trapped charges to release charge-carriers from traps, leading to a trap-induced photoconductivity in the single-layer pentacene diodes. Our studies elucidated the formation mechanisms of photoconductivity in pentacene diodes with extremely fast singlet fission rate.

Modeling and simulation of the shading effect on the performance of a photovoltaic module in the presence of the bypass diode.

Directory of Open Access Journals (Sweden)

Zebiri Mohamed

2018-01-01

Full Text Available In photovoltaic renewable energy production systems where production is dependent on weather conditions, maintaining production at a suitable level is more than essential. The shading effect in photovoltaic panels affects the production of electrical energy by reducing it or even causing the destruction of some or all of the panels. To circumvent this problem, among the solutions proposed in the literature we find the use of by-pass diode and anti-return diode to minimize these consequences.In this paper we present a simulation under Matlab-Simulink of the shading effect and we compare the current voltages characteristics (I-V and power voltage (P-V of a photovoltaic system for different irradiations in the presence and absence of diode by -pass. For modeling, we will use the diode model and the Lambert W-function to solve the implicit equation of the output current. This method allows you to analyze the performance of a panel at different shading levels.

Modeling and simulation of the shading effect on the performance of a photovoltaic module in the presence of the bypass diode.

Science.gov (United States)

Zebiri, Mohamed; Mediouni, Mohamed; Idadoub, Hicham

2018-05-01

In photovoltaic renewable energy production systems where production is dependent on weather conditions, maintaining production at a suitable level is more than essential. The shading effect in photovoltaic panels affects the production of electrical energy by reducing it or even causing the destruction of some or all of the panels. To circumvent this problem, among the solutions proposed in the literature we find the use of by-pass diode and anti-return diode to minimize these consequences.In this paper we present a simulation under Matlab-Simulink of the shading effect and we compare the current voltages characteristics (I-V) and power voltage (P-V) of a photovoltaic system for different irradiations in the presence and absence of diode by -pass. For modeling, we will use the diode model and the Lambert W-function to solve the implicit equation of the output current. This method allows you to analyze the performance of a panel at different shading levels.

Design of 20 W fiber-coupled green laser diode by Zemax

Science.gov (United States)

Qi, Yunfei; Zhao, Pengfei; Wu, Yulong; Chen, Yongqi; Zou, Yonggang

2017-09-01

We represent a design of a 20 W, fiber-coupled diode laser module based on 26 single emitters at 520 nm. The module can produce more than 20 W output power from a standard fiber with core diameter of 400 μm and numerical aperture (NA) of 0.22. To achieve a 20 W laser beam, the spatial beam combination and polarization beam combination by polarization beam splitter are used to combine output of 26 single emitters into a single beam, and then an aspheric lens is used to couple the combined beam into an optical fiber. The simulation shows that the total coupling efficiency is more than 95%. Project supported by the National Key R& D Program of China (No. 2016YFB0402105), the Key Deployment Program of the Chinese Academy of Sciences (No. KGZD-SW-T01-2), and the National Natural Science Foundation of China (No. 61404135).

Emission properties of diode laser bars during pulsed high-power operation

International Nuclear Information System (INIS)

Hempel, Martin; Tomm, Jens W; Elsaesser, Thomas; Hennig, Petra

2011-01-01

High-power diode laser bars (cm-bars) are subjected to single pulse step tests carried out up to and beyond their ultimate limits of operation. Laser nearfields and thermal behaviour are monitored for pulse widths in the 10–100 µs range with streak- and thermo-cameras, respectively. Thresholds of catastrophic optical damage are determined, and their dependence on the length of the injected current pulses is explained qualitatively. This approach permits testing the hardness of facet coatings of cm-bars with or without consideration of accidental single pre-damaged emitter failure effects and thermal crosstalk between the emitters. This allows for the optimization of pulsed operation parameters, helps limiting sudden degradation and provides insight into the mechanisms governing the device emission behaviour at ultimate output powers. (fast track communication)

Super high-power AlGaInN-based laser diodes with a single broad-area stripe emitter fabricated on a GaN substrate

Energy Technology Data Exchange (ETDEWEB)

Goto, Shu; Ohta, Makoto; Yabuki, Yoshifumi; Hoshina, Yukio; Hashizu, Toshihiro; Ikeda, Masao [Development Center, Sony Shiroishi Semiconductor, Inc., 3-53-2 Shiratori, Shiroishi, Miyagi, 989-0734 (Japan); Naganuma, Kaori; Tamamura, Koshi [Core Technology Development Group, Micro Systems Network Company, Sony Corporation, 4-14-1 Asahi-cho, Atsugi-shi Kanagawa, 243-0041 (Japan)

2003-11-01

AlGaInN-based blue-violet laser diodes with a single broad-area stripe emitter were successfully fabricated on GaN substrates. Three stripe widths were examined; 10, 50, and 100 {mu}m, and the maximum light output power of 0.94 W under cw operation at 20 C was achieved for the sample with a stripe width of 10 {mu}m. A super high-power laser diode array was fabricated using 11 of these high-performance laser chips, with a resultant output power of 6.1 W under cw operation at 20 C. This result represents the highest reported output power for blue-violet laser diodes. (copyright 2003 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Numerical study on electronic and optical properties of organic light emitting diodes.

Science.gov (United States)

Kim, Kwangsik; Hwang, Youngwook; Won, Taeyoung

2013-08-01

In this paper, we present a finite element method (FEM) study of space charge effects in organic light emitting diodes. Our model includes a Gaussian density of states to account for the energetic disorder in organic semiconductors and the Fermi-Dirac statistics to account for the charge hopping process between uncorrelated sites. The physical model cover all the key physical processes in OLEDs, namely charge injection, transport and recombination, exciton diffusion, transfer and decay as well as light coupling, and thin-film-optics. The exciton model includes generation, diffusion, and energy transfer as well as annihilation. We assumed that the light emission originates from oscillating and thus embodied as excitons and embedded in a stack of multilayer. The out-coupled emission spectrum has been numerically calculated as a function of viewing angle, polarization, and dipole orientation. We discuss the accumulation of charges at internal interfaces and their signature in the transient response as well as the electric field distribution.

300-MHz optical discriminator-counter

International Nuclear Information System (INIS)

Turko, B.; Lo, C.C.

1981-07-01

The prediction of future CO 2 content in the atmosphere is not completely credible because the oceanographers and terrestrial ecologists do not agree on the global CO 2 balance. Very precise measurements of O 2 /N 2 ratio using Raman scattering over a few years' period could provide important information and lead to the explanation of the disparity in the atmospheric CO 2 balance. An optical discriminator-counter has been developed to count closely spaced optical events in the few photon level. Simulated optical events as close as 2.5 ns apart had been positively detected by using selected photomultipliers and optimized discriminators. Testing of the optical discriminator-counter was done by using an electrical pulse pair spaced 3 ns apart and also by a similar optical pulse pair generated by fast light-emitting diode. The photomultiplier is capable of counting an average single photoelectron pulse frequency of 50 MHz and has a sensitive detecting area of 50 mm in diameter. The discriminator performance is discussed

Active graphene-silicon hybrid diode for terahertz waves.

Science.gov (United States)

Li, Quan; Tian, Zhen; Zhang, Xueqian; Singh, Ranjan; Du, Liangliang; Gu, Jianqiang; Han, Jiaguang; Zhang, Weili

2015-05-11

Controlling the propagation properties of the terahertz waves in graphene holds great promise in enabling novel technologies for the convergence of electronics and photonics. A diode is a fundamental electronic device that allows the passage of current in just one direction based on the polarity of the applied voltage. With simultaneous optical and electrical excitations, we experimentally demonstrate an active diode for the terahertz waves consisting of a graphene-silicon hybrid film. The diode transmits terahertz waves when biased with a positive voltage while attenuates the wave under a low negative voltage, which can be seen as an analogue of an electronic semiconductor diode. Here, we obtain a large transmission modulation of 83% in the graphene-silicon hybrid film, which exhibits tremendous potential for applications in designing broadband terahertz modulators and switchable terahertz plasmonic and metamaterial devices.

Mode division multiplexing technology for single-fiber optical trapping axial-position adjustment.

Science.gov (United States)

Liu, Zhihai; Wang, Lei; Liang, Peibo; Zhang, Yu; Yang, Jun; Yuan, Libo

2013-07-15

We demonstrate trapped yeast cell axial-position adjustment without moving the optical fiber in a single-fiber optical trapping system. The dynamic axial-position adjustment is realized by controlling the power ratio of the fundamental mode beam (LP01) and the low-order mode beam (LP11) generated in a normal single-core fiber. In order to separate the trapping positions produced by the two mode beams, we fabricate a special fiber tapered tip with a selective two-step method. A yeast cell of 6 μm diameter is moved along the optical axis direction for a distance of ~3 μm. To the best of our knowledge, this is the first demonstration of the trapping position adjustment without moving the fiber for single-fiber optical tweezers. The excitation and utilization of multimode beams in a single fiber constitutes a new development for single-fiber optical trapping and makes possible more practical applications in biomedical research fields.

Single-mode glass waveguide technology for optical interchip communication on board level

Science.gov (United States)

Brusberg, Lars; Neitz, Marcel; Schröder, Henning

2012-01-01

The large bandwidth demand in long-distance telecom networks lead to single-mode fiber interconnects as result of low dispersion, low loss and dense wavelength multiplexing possibilities. In contrast, multi-mode interconnects are suitable for much shorter lengths up to 300 meters and are promising for optical links between racks and on board level. Active optical cables based on multi-mode fiber links are at the market and research in multi-mode waveguide integration on board level is still going on. Compared to multi-mode, a single-mode waveguide has much more integration potential because of core diameters of around 20% of a multi-mode waveguide by a much larger bandwidth. But light coupling in single-mode waveguides is much more challenging because of lower coupling tolerances. Together with the silicon photonics technology, a single-mode waveguide technology on board-level will be the straight forward development goal for chip-to-chip optical interconnects integration. Such a hybrid packaging platform providing 3D optical single-mode links bridges the gap between novel photonic integrated circuits and the glass fiber based long-distance telecom networks. Following we introduce our 3D photonic packaging approach based on thin glass substrates with planar integrated optical single-mode waveguides for fiber-to-chip and chip-to-chip interconnects. This novel packaging approach merges micro-system packaging and glass integrated optics. It consists of a thin glass substrate with planar integrated singlemode waveguide circuits, optical mirrors and lenses providing an integration platform for photonic IC assembly and optical fiber interconnect. Thin glass is commercially available in panel and wafer formats and characterizes excellent optical and high-frequency properties. That makes it perfect for microsystem packaging. The paper presents recent results in single-mode waveguide technology on wafer level and waveguide characterization. Furthermore the integration in a

Diode-pumped, single frequency Nd:YLF laser for 60-beam OMEGA laser pulse-shaping system

International Nuclear Information System (INIS)

Okishev, A.V.; Seka, W.

1997-01-01

The operational conditions of the OMEGA pulse-shaping system require an extremely reliable and low-maintenance master oscillator. The authors have developed a diode-pumped, single-frequency, pulsed Nd:YLF laser for this application. The laser generates Q-switched pulses of ∼160-ns duration and ∼10-microJ energy content at the 1,053-nm wavelength with low amplitude fluctuations (<0.6% rms) and low temporal jitter (<7 ns rms). Amplitude and frequency feedback stabilization systems have been used for high long-term amplitude and frequency stability

Studies on water turbine runner which fish can pass through: In case of single stage axial runner

International Nuclear Information System (INIS)

Shimizu, Yukimari; Maeda, Takao; Nagoshi, Osamu; Ieda, Kazuma; Shinma, Hisako; Hagimoto, Michiko

1994-01-01

The relationship between water turbine runner design and operation and the safe passage of fish through the turbine is studied. The kinds of fish used in the tests are a dace, a sweet fish and a small salmon. A single stage axial runner is used. The velocity and pressure distributions were measured inside the turbine casing and along the casing wall. Many pictures showing fish passing through the rotating runner were taken and analyzed. The swimming speed of the fish was examined from video recordings. Fish pass through the runner more rapidly when they can determine and choose the easier path. Injury and mortality of fish are affected by the runner speed and the location of impact of the runner on the fish body

High performance MIIM diode based on cobalt oxide/titanium oxide

Science.gov (United States)

Herner, S. B.; Weerakkody, A. D.; Belkadi, A.; Moddel, G.

2017-05-01

Optical rectennas for infrared energy harvesting commonly incorporate metal/double-insulator/metal diodes. Required diode characteristics include high responsivity and low resistance near zero bias with a sub-micron area, which have not been obtainable simultaneously. Diodes based on a new material set, Co/Co3O4/TiO2/Ti and an area of 0.071 μm2, provide a median maximum responsivity of 4.1 A/W, a median zero-bias responsivity of 1.2 A/W, and a median resistance of 14 kΩ. The highest performing diode has a maximum responsivity of 4.4 A/W, a zero-bias responsivity of 2.2 A/W, and a resistance of 18 kΩ.

Visible laser and superluminescent diode based free space and underwater communications

KAUST Repository

Ooi, Boon S.

2017-01-30

We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.

Visible laser and superluminescent diode based free space and underwater communications

KAUST Repository

Ooi, Boon S.

2017-01-01

We report on our recent progress in high-modulation-efficiency, InGaN-based integrated waveguide modulator-laser diodes (IWM-LDs), high-speed violet and blue emitting superluminescent diodes (SLDs), InGaN-based vertical-cavity surface-emitting lasers (VCSELs), and their applications for gigahertz laser based free-space and underwater wireless optical communications.

All-electronic suppression of mode hopping noise in diode lasers

DEFF Research Database (Denmark)

Bager, L.

1990-01-01

A simple all-electronic stabilization scheme is presented for suppression of external-cavity mode-hopping noise in diode lasers. This excess noise is generated when the laser is subjected to optical feedback and may degrade the overall performance of optical systems including sensors. Suppression...

Optical design and development of a fiber coupled high-power diode laser system for laser transmission welding of plastics

Science.gov (United States)

Rodríguez-Vidal, Eva; Quintana, Iban; Etxarri, Jon; Azkorbebeitia, Urko; Otaduy, Deitze; González, Francisco; Moreno, Fernando

2012-12-01

Laser transmission welding (LTW) of thermoplastics is a direct bonding technique already used in different industrial applications sectors such as automobiles, microfluidics, electronics, and biomedicine. LTW evolves localized heating at the interface of two pieces of plastic to be joined. One of the plastic pieces needs to be optically transparent to the laser radiation whereas the other part has to be absorbent, being that the radiation produced by high power diode lasers is a good alternative for this process. As consequence, a tailored laser system has been designed and developed to obtain high quality weld seams with weld widths between 0.7 and 1.4 mm. The developed laser system consists of two diode laser bars (50 W per bar) coupled into an optical fiber using a nonimaging solution: equalization of the beam parameter product (BPP) in the slow and fast axes by a pair of step-mirrors. The power scaling was carried out by means of a multiplexing polarization technique. The analysis of energy balance and beam quality was performed considering ray tracing simulation (ZEMAX) and experimental validation. The welding experiments were conducted on acrylonitrile/butadiene/styrene (ABS), a thermoplastic frequently used in automotive, electronics and aircraft applications, doped with two different concentrations of carbon nanotubes (0.01% and 0.05% CNTs). Quality of the weld seams on ABS was analyzed in terms of the process parameters (welding speed, laser power and clamping pressure) by visual and optical microscope inspections. Mechanical properties of weld seams were analyzed by mechanical shear tests. High quality weld seams were produced in ABS, revealing the potential of the laser developed in this work for a wide range of plastic welding applications.

Junctionless Diode Enabled by Self-Bias Effect of Ion Gel in Single-Layer MoS2 Device.

Science.gov (United States)

Khan, Muhammad Atif; Rathi, Servin; Park, Jinwoo; Lim, Dongsuk; Lee, Yoontae; Yun, Sun Jin; Youn, Doo-Hyeb; Kim, Gil-Ho

2017-08-16

The self-biasing effects of ion gel from source and drain electrodes on electrical characteristics of single layer and few layer molybdenum disulfide (MoS 2 ) field-effect transistor (FET) have been studied. The self-biasing effect of ion gel is tested for two different configurations, covered and open, where ion gel is in contact with either one or both, source and drain electrodes, respectively. In open configuration, the linear output characteristics of the pristine device becomes nonlinear and on-off ratio drops by 3 orders of magnitude due to the increase in "off" current for both single and few layer MoS 2 FETs. However, the covered configuration results in a highly asymmetric output characteristics with a rectification of around 10 3 and an ideality factor of 1.9. This diode like behavior has been attributed to the reduction of Schottky barrier width by the electric field of self-biased ion gel, which enables an efficient injection of electrons by tunneling at metal-MoS 2 interface. Finally, finite element method based simulations are carried out and the simulated results matches well in principle with the experimental analysis. These self-biased diodes can perform a crucial role in the development of high-frequency optoelectronic and valleytronic devices.

An optically stabilized fast-switching light emitting diode as a light source for functional neuroimaging.

Directory of Open Access Journals (Sweden)

Daniel A Wagenaar

Full Text Available Neuroscience research increasingly relies on optical methods for evoking neuronal activity as well as for measuring it, making bright and stable light sources critical building blocks of modern experimental setups. This paper presents a method to control the brightness of a high-power light emitting diode (LED light source to an unprecedented level of stability. By continuously monitoring the actual light output of the LED with a photodiode and feeding the result back to the LED's driver by way of a proportional-integral controller, drift was reduced to as little as 0.007% per hour over a 12-h period, and short-term fluctuations to 0.005% root-mean-square over 10 seconds. The LED can be switched on and off completely within 100 μs, a feature that is crucial when visual stimuli and light for optical recording need to be interleaved to obtain artifact-free recordings. The utility of the system is demonstrated by recording visual responses in the central nervous system of the medicinal leech Hirudo verbana using voltage-sensitive dyes.

Single Photon Source with a Diamond Nanocrystal on an Optical Nanofiber

International Nuclear Information System (INIS)

Lars Liebermeister

2014-01-01

The development of high yield single photon sources is crucial for applications in quantum information science as well as for experiments on the foundations of quantum physics. The NV-center in diamond is a promising solid state candidate. By using nanodiamonds the single photon emission can easily be coupled to integrated nano-optical and plasmonic structures. Our approach is to utilize efficient coupling of fluorescence of a single NV-center to the evanescent field of an optical nanofiber. A hybrid microscope (confocal microscope combined with an AFM) allows to optically characterize and preselect diamond nanocrystals and then to apply an AFM nanomanipulation technique to move a selected nanodiamond deterministically onto the tapered optical fiber. We report on first results with single diamond nanocrystals containing several NV-centers positioned on a tapered optical fiber. We observe fluorescence emission in the guided mode of the fiber. The second order correlation recorded between the free-space and the guided fluorescence shows pronounced antibunching. This demonstrated efficient evanescent coupling with low background. (author)

Accidents and transients analyses of a super fast reactor with single flow pass core

International Nuclear Information System (INIS)

Sutanto,; Oka, Yoshiaki

2014-01-01

Highlights: • Safety analysis of a Super FR with single flow pass core is conducted. • Loss of feed water flow leads to a direct effect on the loss of fuel channel flow. • The core pressure is sensitive to LOCA accidents due to the direct effect. • Small LOCA introduces a critical break. • The safety criteria for all selected events are satisfied. - Abstract: The supercritical water cooled fast reactor with single flow pass core has been designed to simplify refueling and the structures of upper and lower mixing plenums. To evaluate the safety performance, safety analysis has been conducted with regard to LOCA and non-LOCA accidents including transient events. Safety analysis results show that the safety criteria are satisfied for all selected events. The total loss of feed water flow is the most important accident which the maximum cladding surface temperature (MCST) is high due to a direct effect of the accident on the total loss of flow in all fuel assemblies. However, actuation of the ADS can mitigate the accident. Small LOCA also introduces a critical break at 7.8% break which results high MCST at BOC because the scram and ADS are not actuated. Early ADS actuation is effective to mitigate the accident. In large LOCA, 100% break LOCA results a high MCST of flooding phase at BOC due to high power peaking at the bottom part. Use of high injection flow rate by 2 LPCI units is effective to decrease the MCST

Tunable Diode Laser Atomic Absorption Spectroscopy for Detection of Potassium under Optically Thick Conditions.

Science.gov (United States)

Qu, Zhechao; Steinvall, Erik; Ghorbani, Ramin; Schmidt, Florian M

2016-04-05

Potassium (K) is an important element related to ash and fine-particle formation in biomass combustion processes. In situ measurements of gaseous atomic potassium, K(g), using robust optical absorption techniques can provide valuable insight into the K chemistry. However, for typical parts per billion K(g) concentrations in biomass flames and reactor gases, the product of atomic line strength and absorption path length can give rise to such high absorbance that the sample becomes opaque around the transition line center. We present a tunable diode laser atomic absorption spectroscopy (TDLAAS) methodology that enables accurate, calibration-free species quantification even under optically thick conditions, given that Beer-Lambert's law is valid. Analyte concentration and collisional line shape broadening are simultaneously determined by a least-squares fit of simulated to measured absorption profiles. Method validation measurements of K(g) concentrations in saturated potassium hydroxide vapor in the temperature range 950-1200 K showed excellent agreement with equilibrium calculations, and a dynamic range from 40 pptv cm to 40 ppmv cm. The applicability of the compact TDLAAS sensor is demonstrated by real-time detection of K(g) concentrations close to biomass pellets during atmospheric combustion in a laboratory reactor.

New bi-dimensional SPAD arrays for time resolved single photon imaging

Energy Technology Data Exchange (ETDEWEB)

Grasso, R. [INFN-Laboratori Nazionali del Sud and Sez., INFN di Catania, Via S. Sofia 62, 95125 Catania (Italy); Dipartimento di Fisica ed Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania (Italy); Centro Siciliano di Fisica Nucleare e Struttura della Materia, Viale A. Doria 6, 95125 Catania (Italy); Tudisco, S., E-mail: tudisco@lns.infn.it [INFN-Laboratori Nazionali del Sud and Sez., INFN di Catania, Via S. Sofia 62, 95125 Catania (Italy); Centro Siciliano di Fisica Nucleare e Struttura della Materia, Viale A. Doria 6, 95125 Catania (Italy); Piemonte, C. [FBK-Fondazione Bruno Kessler, Via S. Croce 77, 38122 Trento (Italy); Lo Presti, D. [INFN-Laboratori Nazionali del Sud and Sez., INFN di Catania, Via S. Sofia 62, 95125 Catania (Italy); Dipartimento di Fisica ed Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania (Italy); Anzalone, A. [INFN-Laboratori Nazionali del Sud and Sez., INFN di Catania, Via S. Sofia 62, 95125 Catania (Italy); Musumeci, F.; Scordino, A. [INFN-Laboratori Nazionali del Sud and Sez., INFN di Catania, Via S. Sofia 62, 95125 Catania (Italy); Dipartimento di Fisica ed Astronomia, Università di Catania, Via S. Sofia 64, 95123 Catania (Italy); Serra, N.; Zorzi, N. [FBK-Fondazione Bruno Kessler, Via S. Croce 77, 38122 Trento (Italy)

2013-08-01

Some of the first results concerning the electrical and optical performances of new bi-dimensional single photon avalanche diodes arrays for imaging applications are briefly presented. The planned arrays were realized at the Fondazione Bruno Kessler—Trento and tested at LNS–INFN. The proposed new solution, utilizing a new architecture with integrated quenching resistors, allows to simplify the electronic readout.

New bi-dimensional SPAD arrays for time resolved single photon imaging

International Nuclear Information System (INIS)

Grasso, R.; Tudisco, S.; Piemonte, C.; Lo Presti, D.; Anzalone, A.; Musumeci, F.; Scordino, A.; Serra, N.; Zorzi, N.

2013-01-01

Some of the first results concerning the electrical and optical performances of new bi-dimensional single photon avalanche diodes arrays for imaging applications are briefly presented. The planned arrays were realized at the Fondazione Bruno Kessler—Trento and tested at LNS–INFN. The proposed new solution, utilizing a new architecture with integrated quenching resistors, allows to simplify the electronic readout

Failure Analysis of Heavy-Ion-Irradiated Schottky Diodes

Science.gov (United States)

Casey, Megan C.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Topper, Alyson D.; Campola, Michael J.; Label, Kenneth A.

2017-01-01

In this work, we use high- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images to identify and describe the failure locations in heavy-ion-irradiated Schottky diodes.

Wideband optical vector network analyzer based on optical single-sideband modulation and optical frequency comb.

Science.gov (United States)

Xue, Min; Pan, Shilong; He, Chao; Guo, Ronghui; Zhao, Yongjiu

2013-11-15

A novel approach to increase the measurement range of the optical vector network analyzer (OVNA) based on optical single-sideband (OSSB) modulation is proposed and experimentally demonstrated. In the proposed system, each comb line in an optical frequency comb (OFC) is selected by an optical filter and used as the optical carrier for the OSSB-based OVNA. The frequency responses of an optical device-under-test (ODUT) are thus measured channel by channel. Because the comb lines in the OFC have fixed frequency spacing, by fitting the responses measured in all channels together, the magnitude and phase responses of the ODUT can be accurately achieved in a large range. A proof-of-concept experiment is performed. A measurement range of 105 GHz and a resolution of 1 MHz is achieved when a five-comb-line OFC with a frequency spacing of 20 GHz is applied to measure the magnitude and phase responses of a fiber Bragg grating.

High-Accuracy Elevation Data at Large Scales from Airborne Single-Pass SAR Interferometry

Directory of Open Access Journals (Sweden)

Guy Jean-Pierre Schumann

2016-01-01

Full Text Available Digital elevation models (DEMs are essential data sets for disaster risk management and humanitarian relief services as well as many environmental process models. At present, on the hand, globally available DEMs only meet the basic requirements and for many services and modeling studies are not of high enough spatial resolution and lack accuracy in the vertical. On the other hand, LiDAR-DEMs are of very high spatial resolution and great vertical accuracy but acquisition operations can be very costly for spatial scales larger than a couple of hundred square km and also have severe limitations in wetland areas and under cloudy and rainy conditions. The ideal situation would thus be to have a DEM technology that allows larger spatial coverage than LiDAR but without compromising resolution and vertical accuracy and still performing under some adverse weather conditions and at a reasonable cost. In this paper, we present a novel single pass In-SAR technology for airborne vehicles that is cost-effective and can generate DEMs with a vertical error of around 0.3 m for an average spatial resolution of 3 m. To demonstrate this capability, we compare a sample single-pass In-SAR Ka-band DEM of the California Central Valley from the NASA/JPL airborne GLISTIN-A to a high-resolution LiDAR DEM. We also perform a simple sensitivity analysis to floodplain inundation. Based on the findings of our analysis, we argue that this type of technology can and should be used to replace large regions of globally available lower resolution DEMs, particularly in coastal, delta and floodplain areas where a high number of assets, habitats and lives are at risk from natural disasters. We conclude with a discussion on requirements, advantages and caveats in terms of instrument and data processing.

Development of a semiconductor neutron dosimeter with a PIN diode

International Nuclear Information System (INIS)

Kim, Seungho; Lee, Namho; Cho, Jaiwan; Youk, Geunuck

2004-01-01

When a Si PIN diode is exposed to fast neutrons, it produces displacement in Si lattice structure of the diode. Defects induced from structural dislocation become effective recombination centers for carriers which pass through the base of a PIN diode. Hence, increasing the resistivity of the diode decreases the current for the applied forward voltage. This paper involves the development of a neutron sensor based on the phenomena of the displacement effect damaged by neutron exposure. The neutron effect on the semiconductor was analyzed, and multi PIN diode arrays with various intrinsic layer (I layer) thicknesses and cross sections were fabricated. Under irradiation tests with a neutron beam, the manufactured diodes have good characteristics of linearity in a neutron irradiation experiment and give results that the increase of thickness of I layer and the decrease of the cross-section of the PIN diodes improve the sensitivity. Newly developed PIN diodes with a thicker I layer and various cross sections were retested and showed the best neutron sensitivity in the condition that the I layer thickness was similar to the length of a side of the cross-section. On the basis of two test results, final PIN diodes with a rectangular shape were manufactured and the characteristics for neutron detectors were analyzed through the neutron beam test using the on-line electronic dosimetry system. The developed PIN diode shows a good linearity to absorbed dose in the range of 0 to 1,000cGy (Tissue) and its neutron sensitivity is 13 mV/cGy at a constant current of 5 mA, that is three higher than that of similar commercially developed neutron detectors. Moreover the device shows less dependency on the orientation of the neutron beam and a considerable stability in an annealing test for a long period. (author)

Using Pre-TMIn Treatment to Improve the Optical Properties of Green Light Emitting Diodes

Directory of Open Access Journals (Sweden)

Bing Xu

2014-01-01

Full Text Available We investigated the effects of pre-TMIn treatment on the optical properties of green light emitting diodes (LEDs. Although pre-TMIn treatment did not affect the epitaxial structure of quantum wells, it significantly improved the quality of the surface morphology relative to that of the untreated sample. Indium cluster can be seen by high-resolution transmission electron microscopy (HR-TEM, which is the explanation for the red-shift of photoluminescence (PL. Time-resolved photoluminescence measurements indicated that the sample prepared with pre-TMIn treatment had a shorter radiative decay time. As a result, the light output power of the treated green LED was higher than that of the conventional untreated one. Thus, pre-TMIn treatment appears to be a simple and efficient means of improving the performance of green LEDs.

20-meter underwater wireless optical communication link with 1.5 Gbps data rate.

Science.gov (United States)

Shen, Chao; Guo, Yujian; Oubei, Hassan M; Ng, Tien Khee; Liu, Guangyu; Park, Ki-Hong; Ho, Kang-Ting; Alouini, Mohamed-Slim; Ooi, Boon S

2016-10-31

The video streaming, data transmission, and remote control in underwater call for high speed (Gbps) communication link with a long channel length (~10 meters). We present a compact and low power consumption underwater wireless optical communication (UWOC) system utilizing a 450-nm laser diode (LD) and a Si avalanche photodetector. With the LD operating at a driving current of 80 mA with an optical power of 51.3 mW, we demonstrated a high-speed UWOC link offering a data rate up to 2 Gbps over a 12-meter-long, and 1.5 Gbps over a record 20-meter-long underwater channel. The measured bit-error rate (BER) are 2.8 × 10-5, and 3.0 × 10-3, respectively, which pass well the forward error correction (FEC) criterion.