Radiation resistant low bandgap InGaAsP solar cell for multi-junction solar cells

International Nuclear Information System (INIS)

Khan, Aurangzeb; Yamaguchi, Masafumi; Dharmaras, Nathaji; Yamada, Takashi; Tanabe, Tatsuya; Takagishi, Shigenori; Itoh, Hisayoshi; Ohshima, Takeshi

2001-01-01

We have explored the superior radiation tolerance of metal organic chemical vapor deposition (MOCVD) grown, low bandgap, (0.95eV) InGaAsP solar cells as compared to GaAs-on-Ge cells, after 1 MeV electron irradiation. The minority carrier injection due to forward bias and light illumination under low concentration ratio, can lead to enhanced recovery of radiation damage in InGaAsP n + -p junction solar cells. An injection anneal activation energy (0.58eV) of the defects involved in damage/recovery of the InGaAsP solar cells has been estimated from the resultant recovery of the solar cell properties following minority carrier injection. The results suggest that low bandgap radiation resistant InGaAsP (0.95eV) lattice matched to InP substrates provide an alternative to use as bottom cells in multi-junction solar cells instead of less radiation ressitant conventional GaAs based solar cells for space applications. (author)

Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Yang, Wen-xian; Dai, Pan; Ji, Lian; Tan, Ming; Wu, Yuan-yuan [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Uchida, Shiro [Department of Mechanical Science and Engineering Faculty of Engineering, Chiba Institute of Technology, 2-17-1, Tsudanuma, Narashino, Chiba 275-0016 (Japan); Lu, Shu-long, E-mail: sllu2008@sinano.ac.cn [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China); Yang, Hui [Key Lab of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences (CAS), Suzhou 215123 (China)

2016-12-15

Highlights: • High quality InGaAsP material with a bandgap of 1.0 eV was grown by MBE. • Room-temperature wafer-bonded GaInP/GaAs/InGaAsP SCs were fabricated. • An efficiency of 30.3% of wafer-bonded triple-junction SCs was obtained. - Abstract: We report on the fabrication of III–V compound semiconductor multi-junction solar cells using the room-temperature wafer bonding technique. GaInP/GaAs dual-junction solar cells on GaAs substrate and InGaAsP single junction solar cell on InP substrate were separately grown by all-solid state molecular beam epitaxy (MBE). The two cells were then bonded to a triple-junction solar cell at room-temperature. A conversion efficiency of 30.3% of GaInP/GaAs/InGaAsP wafer-bonded solar cell was obtained at 1-sun condition under the AM1.5G solar simulator. The result suggests that the room-temperature wafer bonding technique and MBE technique have a great potential to improve the performance of multi-junction solar cell.

Quadruple-Junction Thin-Film Silicon-Based Solar Cells

NARCIS (Netherlands)

Si, F.T.

2017-01-01

The direct utilization of sunlight is a critical energy source in a sustainable future. One of the options is to convert the solar energy into electricity using thin-film silicon-based solar cells (TFSSCs). Solar cells in a triple-junction configuration have exhibited the highest energy conversion

Bismuth-catalyzed and doped silicon nanowires for one-pump-down fabrication of radial junction solar cells.

Science.gov (United States)

Yu, Linwei; Fortuna, Franck; O'Donnell, Benedict; Jeon, Taewoo; Foldyna, Martin; Picardi, Gennaro; Roca i Cabarrocas, Pere

2012-08-08

Silicon nanowires (SiNWs) are becoming a popular choice to develop a new generation of radial junction solar cells. We here explore a bismuth- (Bi-) catalyzed growth and doping of SiNWs, via vapor-liquid-solid (VLS) mode, to fabricate amorphous Si radial n-i-p junction solar cells in a one-pump-down and low-temperature process in a single chamber plasma deposition system. We provide the first evidence that catalyst doping in the SiNW cores, caused by incorporating Bi catalyst atoms as n-type dopant, can be utilized to fabricate radial junction solar cells, with a record open circuit voltage of V(oc) = 0.76 V and an enhanced light trapping effect that boosts the short circuit current to J(sc) = 11.23 mA/cm(2). More importantly, this bi-catalyzed SiNW growth and doping strategy exempts the use of extremely toxic phosphine gas, leading to significant procedure simplification and cost reduction for building radial junction thin film solar cells.

A study on the electric properties of single-junction GaAs solar cells under the combined radiation of low-energy protons and electrons

International Nuclear Information System (INIS)

Zhao Huijie; Wu Yiyong; Xiao Jingdong; He Shiyu; Yang Dezhuang; Sun Yanzheng; Sun Qiang; Lv Wei; Xiao Zhibin; Huang Caiyong

2008-01-01

Displacement damage induced by charged particle radiation is the main cause of degradation of orbital-service solar cells, while the radiation-induced ionization shows no permanent damage effect on their electrical properties. It is reported that in single crystal silicon solar cells, low-energy electron radiation does not exert permanent degradation of their properties, but the fluence of electron radiation exerts an influence on the damage magnitude under the combined radiation of protons and electrons. The electrical properties of the single-junction GaAs/Ge solar cells were investigated after irradiation by sequential and synchronous electron and proton beams. Low-energy electron radiation showed no effects on the change of the solar cell properties during sequential or synchronous irradiation, implying ionization during particle radiation could not exert influence on the displacement damage process to the solar cells under the experimental conditions

Five-Junction Solar Cell Optimization Using Silvaco Atlas

Science.gov (United States)

2017-09-01

SOLAR CELL OPTIMIZATION USING SILVACO ATLAS by Raymond J. Kilway II September 2017 Thesis Advisor: Sherif Michael Second Reader: Matthew......12b. DISTRIBUTION CODE 13. ABSTRACT (maximum 200 words) Multi-junction solar cells have given rise to compact high-efficiency photovoltaic

GaAs nanowire array solar cells with axial p-i-n junctions.

Science.gov (United States)

Yao, Maoqing; Huang, Ningfeng; Cong, Sen; Chi, Chun-Yung; Seyedi, M Ashkan; Lin, Yen-Ting; Cao, Yu; Povinelli, Michelle L; Dapkus, P Daniel; Zhou, Chongwu

2014-06-11

Because of unique structural, optical, and electrical properties, solar cells based on semiconductor nanowires are a rapidly evolving scientific enterprise. Various approaches employing III-V nanowires have emerged, among which GaAs, especially, is under intense research and development. Most reported GaAs nanowire solar cells form p-n junctions in the radial direction; however, nanowires using axial junction may enable the attainment of high open circuit voltage (Voc) and integration into multijunction solar cells. Here, we report GaAs nanowire solar cells with axial p-i-n junctions that achieve 7.58% efficiency. Simulations show that axial junctions are more tolerant to doping variation than radial junctions and lead to higher Voc under certain conditions. We further study the effect of wire diameter and junction depth using electrical characterization and cathodoluminescence. The results show that large diameter and shallow junctions are essential for a high extraction efficiency. Our approach opens up great opportunity for future low-cost, high-efficiency photovoltaics.

High-performance single CdS nanowire (nanobelt) Schottky junction solar cells with Au/graphene Schottky electrodes.

Science.gov (United States)

Ye, Yu; Dai, Yu; Dai, Lun; Shi, Zujin; Liu, Nan; Wang, Fei; Fu, Lei; Peng, Ruomin; Wen, Xiaonan; Chen, Zhijian; Liu, Zhongfan; Qin, Guogang

2010-12-01

High-performance single CdS nanowire (NW) as well as nanobelt (NB) Schottky junction solar cells were fabricated. Au (5 nm)/graphene combined layers were used as the Schottky contact electrodes to the NWs (NBs). Typical as-fabricated NW solar cell shows excellent photovoltaic behavior with an open circuit voltage of ∼0.15 V, a short circuit current of ∼275.0 pA, and an energy conversion efficiency of up to ∼1.65%. The physical mechanism of the combined Schottky electrode was discussed. We attribute the prominent capability of the devices to the high-performance Schottky combined electrode, which has the merits of low series resistance, high transparency, and good Schottky contact to the CdS NW (NB). Besides, a promising site-controllable patterned graphene transfer method, which has the advantages of economizing graphene material and free from additional etching process, was demonstrated in this work. Our results suggest that semiconductor NWs (NBs) are promising materials for novel solar cells, which have potential application in integrated nano-optoelectronic systems.

Application of LBIC measurements for characterisation of triple junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Kwarikunda, N., E-mail: Nicholas.kwarikunda@live.nmmu.ac.za [Nelson Mandela Metropolitan University, P.O. BOX 77000, Port Elizabeth, 6031 (South Africa); Makerere University, P.O. BOX 7062, Kampala (Uganda); Dyk, E.E. van; Vorster, F.J. [Nelson Mandela Metropolitan University, P.O. BOX 77000, Port Elizabeth, 6031 (South Africa); Okullo, W. [Makerere University, P.O. BOX 7062, Kampala (Uganda); Munji, M.K. [Kenyatta University, P.O. BOX 43844-00100, Nairobi (Kenya)

2014-04-15

In this study the Light Beam Induced Current (LBIC) imaging technique was used to characterise InGaP/InGaAs/Ge triple junction solar cells. The study focused on the use of monochromatic and solar light as beam probes to obtain photocurrent response maps from which the presence of any current reducing features on the solar cell were identified. Point illuminated current voltage (I–V) curves were obtained simultaneously while LBIC scanning measurements were being made. Curve fitting using an interval division algorithm based on the single diode model was performed to extract basic point device and performance parameters to give a rough indication of the functioning of the triple junction device. Using red and blue lasers as beam probes, reverse voltage breakdown was observed on the I–V curves which could be attributed to the Ge bottom subcell not being fully activated. The extracted parameters obtained when using monochromatic and solar light beam probes showed a large variation, indicating the dependence of I–V parameters on the spectral content of the beam probe.

Application of LBIC measurements for characterisation of triple junction solar cells

International Nuclear Information System (INIS)

Kwarikunda, N.; Dyk, E.E. van; Vorster, F.J.; Okullo, W.; Munji, M.K.

2014-01-01

In this study the Light Beam Induced Current (LBIC) imaging technique was used to characterise InGaP/InGaAs/Ge triple junction solar cells. The study focused on the use of monochromatic and solar light as beam probes to obtain photocurrent response maps from which the presence of any current reducing features on the solar cell were identified. Point illuminated current voltage (I–V) curves were obtained simultaneously while LBIC scanning measurements were being made. Curve fitting using an interval division algorithm based on the single diode model was performed to extract basic point device and performance parameters to give a rough indication of the functioning of the triple junction device. Using red and blue lasers as beam probes, reverse voltage breakdown was observed on the I–V curves which could be attributed to the Ge bottom subcell not being fully activated. The extracted parameters obtained when using monochromatic and solar light beam probes showed a large variation, indicating the dependence of I–V parameters on the spectral content of the beam probe.

Highly doped layer for tunnel junctions in solar cells

Science.gov (United States)

Fetzer, Christopher M.

2017-08-01

A highly doped layer for interconnecting tunnel junctions in multijunction solar cells is presented. The highly doped layer is a delta doped layer in one or both layers of a tunnel diode junction used to connect two or more p-on-n or n-on-p solar cells in a multijunction solar cell. A delta doped layer is made by interrupting the epitaxial growth of one of the layers of the tunnel diode, depositing a delta dopant at a concentration substantially greater than the concentration used in growing the layer of the tunnel diode, and then continuing to epitaxially grow the remaining tunnel diode.

Performance analysis of high-concentrated multi-junction solar cells in hot climate

Science.gov (United States)

Ghoneim, Adel A.; Kandil, Kandil M.; Alzanki, Talal H.; Alenezi, Mohammad R.

2018-03-01

Multi-junction concentrator solar cells are a promising technology as they can fulfill the increasing energy demand with renewable sources. Focusing sunlight upon the aperture of multi-junction photovoltaic (PV) cells can generate much greater power densities than conventional PV cells. So, concentrated PV multi-junction solar cells offer a promising way towards achieving minimum cost per kilowatt-hour. However, these cells have many aspects that must be fixed to be feasible for large-scale energy generation. In this work, a model is developed to analyze the impact of various atmospheric factors on concentrator PV performance. A single-diode equivalent circuit model is developed to examine multi-junction cells performance in hot weather conditions, considering the impacts of both temperature and concentration ratio. The impacts of spectral variations of irradiance on annual performance of various high-concentrated photovoltaic (HCPV) panels are examined, adapting spectra simulations using the SMARTS model. Also, the diode shunt resistance neglected in the existing models is considered in the present model. The present results are efficiently validated against measurements from published data to within 2% accuracy. Present predictions show that the single-diode model considering the shunt resistance gives accurate and reliable results. Also, aerosol optical depth (AOD) and air mass are most important atmospheric parameters having a significant impact on HCPV cell performance. In addition, the electrical efficiency (η) is noticed to increase with concentration to a certain concentration degree after which it decreases. Finally, based on the model predictions, let us conclude that the present model could be adapted properly to examine HCPV cells' performance over a broad range of operating conditions.

Solar cell junction temperature measurement of PV module

KAUST Repository

Huang, B.J.; Yang, P.E.; Lin, Y.P.; Lin, B.Y.; Chen, H.J.; Lai, R.C.; Cheng, J.S.

2011-01-01

The present study develops a simple non-destructive method to measure the solar cell junction temperature of PV module. The PV module was put in the environmental chamber with precise temperature control to keep the solar PV module as well

Modeling Radiation Effects on a Triple Junction Solar Cell using Silvaco ATLAS

OpenAIRE

Schiavo, Daniel

2012-01-01

In this research, Silvaco ATLAS, an advanced virtual wafer fabrication tool, was used to model the effects of radiation on a triple junction InGaP/GaAs/Ge solar cell. A Silvaco ATLAS model of a triple junction InGaP/GaAs/Ge cell was created by first creating individual models for solar cells composed of each material. Realistic doping levels were used and thicknesses were varied to produce the design parameters and create reasonably efficient solar cell models for testing. After the individua...

Effect of junction quality on the performance of a silicon solar cell ...

African Journals Online (AJOL)

In this work, a modeling study of the effect of the junction quality on the performance of a silicon solar cell is presented. Based on a one dimensional modeling of the solar cell, the continuity equation of excess minority carriers is solved with boundary conditions taking into account the intrinsic junction recombination velocity ...

A thin-film silicon/silicon hetero-junction hybrid solar cell for photoelectrochemical water-reduction applications

NARCIS (Netherlands)

Vasudevan, R.A.; Thanawala, Z; Han, L.; Buijs, Thom; Tan, H.; Deligiannis, D.; Perez Rodriguez, P.; Digdaya, I.A.; Smith, W.A.; Zeman, M.; Smets, A.H.M.

2016-01-01

A hybrid tandem solar cell consisting of a thin-film, nanocrystalline silicon top junction and a siliconheterojunction bottom junction is proposed as a supporting solar cell for photoelectrochemical applications.Tunneling recombination junction engineering is shown to be an important consideration

Systematic optimization of quantum junction colloidal quantum dot solar cells

KAUST Repository

Liu, Huan

2012-01-01

The recently reported quantum junction architecture represents a promising approach to building a rectifying photovoltaic device that employs colloidal quantum dot layers on each side of the p-n junction. Here, we report an optimized quantum junction solar cell that leverages an improved aluminum zinc oxide electrode for a stable contact to the n-side of the quantum junction and silver doping of the p-layer that greatly enhances the photocurrent by expanding the depletion region in the n-side of the device. These improvements result in greater stability and a power conversion efficiency of 6.1 under AM1.5 simulated solar illumination. © 2012 American Institute of Physics.

Enhancing light absorption within the carrier transport length in quantum junction solar cells.

Science.gov (United States)

Fu, Yulan; Hara, Yukihiro; Miller, Christopher W; Lopez, Rene

2015-09-10

Colloidal quantum dot (CQD) solar cells have attracted tremendous attention because of their tunable absorption spectrum window and potentially low processing cost. Recently reported quantum junction solar cells represent a promising approach to building a rectifying photovoltaic device that employs CQD layers on each side of the p-n junction. However, the ultimate efficiency of CQD solar cells is still highly limited by their high trap state density in both p- and n-type CQDs. By modeling photonic structures to enhance the light absorption within the carrier transport length and by ensuring that the carrier generation and collection efficiencies were both augmented, our work shows that overall device current density could be improved. We utilized a two-dimensional numerical model to calculate the characteristics of patterned CQD solar cells based on a simple grating structure. Our calculation predicts a short circuit current density as high as 31  mA/cm2, a value nearly 1.5 times larger than that of the conventional flat design, showing the great potential value of patterned quantum junction solar cells.

The Design and Optimization of GaAs Single Solar Cells Using the Genetic Algorithm and Silvaco ATLAS

Directory of Open Access Journals (Sweden)

Kamal Attari

2017-01-01

Full Text Available Single-junction solar cells are the most available in the market and the most simple in terms of the realization and fabrication comparing to the other solar devices. However, these single-junction solar cells need more development and optimization for higher conversion efficiency. In addition to the doping densities and compromises between different layers and their best thickness value, the choice of the materials is also an important factor on improving the efficiency. In this paper, an efficient single-junction solar cell model of GaAs is presented and optimized. In the first step, an initial model was simulated and then the results were processed by an algorithm code. In this work, the proposed optimization method is a genetic search algorithm implemented in Matlab receiving ATLAS data to generate an optimum output power solar cell. Other performance parameters such as photogeneration rates, external quantum efficiency (EQE, and internal quantum efficiency (EQI are also obtained. The simulation shows that the proposed method provides significant conversion efficiency improvement of 29.7% under AM1.5G illumination. The other results were Jsc = 34.79 mA/cm2, Voc = 1 V, and fill factor (FF = 85%.

Fluctuations of the peak current of tunnel diodes in multi-junction solar cells

International Nuclear Information System (INIS)

Jandieri, K; Baranovskii, S D; Stolz, W; Gebhard, F; Guter, W; Hermle, M; Bett, A W

2009-01-01

Interband tunnel diodes are widely used to electrically interconnect the individual subcells in multi-junction solar cells. Tunnel diodes have to operate at high current densities and low voltages, especially when used in concentrator solar cells. They represent one of the most critical elements of multi-junction solar cells and the fluctuations of the peak current in the diodes have an essential impact on the performance and reliability of the devices. Recently we have found that GaAs tunnel diodes exhibit extremely high peak currents that can be explained by resonant tunnelling through defects homogeneously distributed in the junction. Experiments evidence rather large fluctuations of the peak current in the diodes fabricated from the same wafer. It is a challenging task to clarify the reason for such large fluctuations in order to improve the performance of the multi-junction solar cells. In this work we show that the large fluctuations of the peak current in tunnel diodes can be caused by relatively small fluctuations of the dopant concentration. We also show that the fluctuations of the peak current become smaller for deeper energy levels of the defects responsible for the resonant tunnelling.

Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

KAUST Repository

Sahli, Florent

2017-10-09

Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.

Improved Optics in Monolithic Perovskite/Silicon Tandem Solar Cells with a Nanocrystalline Silicon Recombination Junction

KAUST Repository

Sahli, Florent; Kamino, Brett A.; Werner, Jé ré mie; Brä uninger, Matthias; Paviet-Salomon, Bertrand; Barraud, Loris; Monnard, Raphaë l; Seif, Johannes Peter; Tomasi, Andrea; Jeangros, Quentin; Hessler-Wyser, Aï cha; De Wolf, Stefaan; Despeisse, Matthieu; Nicolay, Sylvain; Niesen, Bjoern; Ballif, Christophe

2017-01-01

Perovskite/silicon tandem solar cells are increasingly recognized as promi­sing candidates for next-generation photovoltaics with performance beyond the single-junction limit at potentially low production costs. Current designs for monolithic tandems rely on transparent conductive oxides as an intermediate recombination layer, which lead to optical losses and reduced shunt resistance. An improved recombination junction based on nanocrystalline silicon layers to mitigate these losses is demonstrated. When employed in monolithic perovskite/silicon heterojunction tandem cells with a planar front side, this junction is found to increase the bottom cell photocurrent by more than 1 mA cm−2. In combination with a cesium-based perovskite top cell, this leads to tandem cell power-conversion efficiencies of up to 22.7% obtained from J–V measurements and steady-state efficiencies of up to 22.0% during maximum power point tracking. Thanks to its low lateral conductivity, the nanocrystalline silicon recombination junction enables upscaling of monolithic perovskite/silicon heterojunction tandem cells, resulting in a 12.96 cm2 monolithic tandem cell with a steady-state efficiency of 18%.

Device characterization for design optimization of 4 junction inverted metamorphic concentrator solar cells

Energy Technology Data Exchange (ETDEWEB)

Geisz, John F.; France, Ryan M.; Steiner, Myles A.; Friedman, Daniel J. [National Renewable Energy Laboratory, Golden, CO 80401 (United States); García, Iván [National Renewable Energy Laboratory, Golden, CO 80401 USA and Instituto de Energía Solar, Universidad Politécnica de Madrid, Avda Complutense s/n, 28040 Madrid (Spain)

2014-09-26

Quantitative electroluminescence (EL) and luminescent coupling (LC) analysis, along with more conventional characterization techniques, are combined to completely characterize the subcell JV curves within a fourjunction (4J) inverted metamorphic solar cell (IMM). The 4J performance under arbitrary spectral conditions can be predicted from these subcell JV curves. The internal radiative efficiency (IRE) of each junction has been determined as a function of current density from the external radiative efficiency using optical modeling, but this required the accurate determination of the individual junction current densities during the EL measurement as affected by LC. These measurement and analysis techniques can be applied to any multijunction solar cell. The 4J IMM solar cell used to illustrate these techniques showed excellent junction quality as exhibited by high IRE and a one-sun AM1.5D efficiency of 36.3%. This device operates up to 1000 suns without limitations due to any of the three tunnel junctions.

Mechanically Stacked Dual-Junction and Triple-Junction III-V/Si-IBC Cells with Efficiencies Exceeding 31.5% and 35.4%: Preprint

Energy Technology Data Exchange (ETDEWEB)

Schnabel, Manuel [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Tamboli, Adele C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Warren, Emily L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Schulte-Huxel, Henning [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Klein, Talysa [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Van Hest, Marinus F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Geisz, John F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Stradins, Paul [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Steiner, Myles A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Rienaecker, Michael [Institute for Solar Energy Research Hamelin (ISFH); Merkle, Agnes [Institute for Solar Energy Research Hamelin (ISFH); Kajari-Schroeder, S. [Institute for Solar Energy Research Hamelin (ISFH); Niepelt, Raphael [Institute for Solar Energy Research Hamelin (ISFH); Schmidt, Jan [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover; Brendel, Rolf [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover; Peibst, Robby [Institute for Solar Energy Research Hamelin (ISFH); Leibniz Universitat Hannover

2017-10-02

Despite steady advancements in the efficiency of crystalline Silicon (c-Si) photovoltaics (PV) within the last decades, the theoretical efficiency limit of 29.4 percent depicts an insurmountable barrier for silicon-based single-junction solar cells. Combining the Si cell with a second absorber material on top in a dual junction tandem or triple junction solar cell is an attractive option to surpass this limit significantly. We demonstrate a mechanically stacked GaInP/Si dual-junction cell with an in-house measured efficiency of 31.5 percent and a GaInP/GaAs/Si triple-junction cell with a certified efficiency of 35.4 percent.

Note: Photoluminescence measurement system for multi-junction solar cells.

Science.gov (United States)

Trespidi, F; Malchiodi, A; Farina, F

2017-05-01

We describe a photoluminescence spectroscopy system developed for studying phenomena of optical coupling in multiple-junction solar cells and processed/unprocessed wafers, under the high solar concentration levels typical of HCPV (High Concentration PhotoVoltaic) systems. The instrument operates at room temperature over two spectral ranges: 475 nm-1100 nm and 950 nm-1650 nm. Power densities exceeding 10 000 suns can be obtained on the sample. The system can host up to four compact focusable solid state laser sources, presently only three are mounted and operated at 450 nm, 520 nm, and 785 nm; they provide overlapped beams on the sample surface and can shine simultaneously the sample to study possible mutual interaction between the different junctions.

TCAD analysis of graphene silicon Schottky junction solar cell

Science.gov (United States)

Kuang, Yawei; Liu, Yushen; Ma, Yulong; Xu, Jing; Yang, Xifeng; Feng, Jinfu

2015-08-01

The performance of graphene based Schottky junction solar cell on silicon substrate is studied theoretically by TCAD Silvaco tools. We calculate the current-voltage curves and internal quantum efficiency of this device at different conditions using tow dimensional model. The results show that the power conversion efficiency of Schottky solar cell dependents on the work function of graphene and the physical properties of silicon such as thickness and doping concentration. At higher concentration of 1e17cm-3 for n-type silicon, the dark current got a sharp rise compared with lower doping concentration which implies a convert of electron emission mechanism. The biggest fill factor got at higher phos doping predicts a new direction for higher performance graphene Schottky solar cell design.

An Efficient Solution-Processed Intermediate Layer for Facilitating Fabrication of Organic Multi-Junction Solar Cells

DEFF Research Database (Denmark)

Ning Li; Baran, Derya; Forberich, Karen

2013-01-01

):poly(styrenesulfonate) (PEDOT:PSS) is demonstrated for series-connected multi-junction organic solar cells (OSCs). Drying at 80 °C in air is sufficient for this solution-processed IML to obtain excellent functionality and reliability, which allow the use of most of high performance donor materials in the tandem structure....... An open circuit voltage (Voc) of 0.56 V is obtained for single-junction OSCs based on a low band-gap polymer, while multi-junction OSCs based on the same absorber material deliver promising fill factor values along with fully additive Voc as the number of junctions increase. Optical and electrical...... simulations, which are reliable and promising guidelines for the design and investigation of multi-junction OSCs, are discussed. The outcome of optical and electrical simulations is in excellent agreement with the experimental data, indicating the outstanding efficiency and functionality of this solution...

Investigation of InGaN/Si double junction tandem solar cells | Bouzid ...

African Journals Online (AJOL)

In this work, the solar power conversion efficiency of InGaN/Si double junction tandem solar cells was investigated under 1-sun AM1.5 illumination, using realistic material parameters. With this intention, the current-voltage curves are calculated for different front recombination velocities and the influence of the bottom cell ...

Single-graded CIGS with narrow bandgap for tandem solar cells.

Science.gov (United States)

Feurer, Thomas; Bissig, Benjamin; Weiss, Thomas P; Carron, Romain; Avancini, Enrico; Löckinger, Johannes; Buecheler, Stephan; Tiwari, Ayodhya N

2018-01-01

Multi-junction solar cells show the highest photovoltaic energy conversion efficiencies, but the current technologies based on wafers and epitaxial growth of multiple layers are very costly. Therefore, there is a high interest in realizing multi-junction tandem devices based on cost-effective thin film technologies. While the efficiency of such devices has been limited so far because of the rather low efficiency of semitransparent wide bandgap top cells, the recent rise of wide bandgap perovskite solar cells has inspired the development of new thin film tandem solar devices. In order to realize monolithic, and therefore current-matched thin film tandem solar cells, a bottom cell with narrow bandgap (~1 eV) and high efficiency is necessary. In this work, we present Cu(In,Ga)Se 2 with a bandgap of 1.00 eV and a maximum power conversion efficiency of 16.1%. This is achieved by implementing a gallium grading towards the back contact into a CuInSe 2 base material. We show that this modification significantly improves the open circuit voltage but does not reduce the spectral response range of these devices. Therefore, efficient cells with narrow bandgap absorbers are obtained, yielding the high current density necessary for thin film multi-junction solar cells.

Gallium arsenide single crystal solar cell structure and method of making

Science.gov (United States)

Stirn, Richard J. (Inventor)

1983-01-01

A production method and structure for a thin-film GaAs crystal for a solar cell on a single-crystal silicon substrate (10) comprising the steps of growing a single-crystal interlayer (12) of material having a closer match in lattice and thermal expansion with single-crystal GaAs than the single-crystal silicon of the substrate, and epitaxially growing a single-crystal film (14) on the interlayer. The material of the interlayer may be germanium or graded germanium-silicon alloy, with low germanium content at the silicon substrate interface, and high germanium content at the upper surface. The surface of the interface layer (12) is annealed for recrystallization by a pulsed beam of energy (laser or electron) prior to growing the interlayer. The solar cell structure may be grown as a single-crystal n.sup.+ /p shallow homojunction film or as a p/n or n/p junction film. A Ga(Al)AS heteroface film may be grown over the GaAs film.

A graphene/single GaAs nanowire Schottky junction photovoltaic device.

Science.gov (United States)

Luo, Yanbin; Yan, Xin; Zhang, Jinnan; Li, Bang; Wu, Yao; Lu, Qichao; Jin, Chenxiaoshuai; Zhang, Xia; Ren, Xiaomin

2018-05-04

A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

Nanostructured thin films for multibandgap silicon triple junction solar cells

NARCIS (Netherlands)

Schropp, R.E.I.; Li, H. B. T.; Franken, R.H.; Rath, J.K.; van der Werf, C.H.M.; Schuttauf, J.A.; Stolk, R.L.

2009-01-01

A considerable improvement in performance has been achieved for multibandgap proto-Si/proto-SiGe/nc-Si:H triple junction n–i–p solar cells in which hot-wire chemical vapor deposition (HWCVD) is used to obtain the absorber layers of the bottom and the top cell. To achieve this, optimized Ag/ZnO

A differential spectral responsivity measurement system constructed for determining of the spectral responsivity of a single- and triple-junction photovoltaic cells

Science.gov (United States)

Sametoglu, Ferhat; Celikel, Oguz; Witt, Florian

2017-10-01

A differential spectral responsivity (DSR) measurement system has been designed and constructed at National Metrology Institute of Turkey (TUBITAK UME) to determine the spectral responsivity (SR) of a single- or a multi-junction photovoltaic device (solar cell). The DSR setup contains a broad band light bias source composed of a constructed Solar Simulator based on a 1000 W Xe-arc lamp owning a AM-1.5 filter and 250 W quartz-tungsten-halogen lamp, a designed and constructed LED-based Bias Light Sources, a DC voltage bias circuit, and a probe beam optical power tracking and correction circuit controlled with an ADuC847 microcontroller card together with an embedded C based software, designed and constructed in TUBITAK UME under this project. By using the constructed DSR measurement system, the SR calibration of solar cells, the monolitic triple-junction solar cell GaInP/GaInAs/Ge and its corresponding component cells have been performed within the EURAMET Joint Research Project SolCell.

GaSb solar cells grown on GaAs via interfacial misfit arrays for use in the III-Sb multi-junction cell

Science.gov (United States)

Nelson, George T.; Juang, Bor-Chau; Slocum, Michael A.; Bittner, Zachary S.; Laghumavarapu, Ramesh B.; Huffaker, Diana L.; Hubbard, Seth M.

2017-12-01

Growth of GaSb with low threading dislocation density directly on GaAs may be possible with the strategic strain relaxation of interfacial misfit arrays. This creates an opportunity for a multi-junction solar cell with access to a wide range of well-developed direct bandgap materials. Multi-junction cells with a single layer of GaSb/GaAs interfacial misfit arrays could achieve higher efficiency than state-of-the-art inverted metamorphic multi-junction cells while forgoing the need for costly compositionally graded buffer layers. To develop this technology, GaSb single junction cells were grown via molecular beam epitaxy on both GaSb and GaAs substrates to compare homoepitaxial and heteroepitaxial GaSb device results. The GaSb-on-GaSb cell had an AM1.5g efficiency of 5.5% and a 44-sun AM1.5d efficiency of 8.9%. The GaSb-on-GaAs cell was 1.0% efficient under AM1.5g and 4.5% at 44 suns. The lower performance of the heteroepitaxial cell was due to low minority carrier Shockley-Read-Hall lifetimes and bulk shunting caused by defects related to the mismatched growth. A physics-based device simulator was used to create an inverted triple-junction GaInP/GaAs/GaSb model. The model predicted that, with current GaSb-on-GaAs material quality, the not-current-matched, proof-of-concept cell would provide 0.5% absolute efficiency gain over a tandem GaInP/GaAs cell at 1 sun and 2.5% gain at 44 suns, indicating that the effectiveness of the GaSb junction was a function of concentration.

Performance of ultra high efficiency thin germanium p-n junction solar cells intended for solar thermophotovoltaic application

Energy Technology Data Exchange (ETDEWEB)

Vera, E S; Loferski, J J; Spitzer, M; Schewchun, J

1981-01-01

The theoretical upper limit conversion efficiency as a function of cell thickness and junction position is calculated for a germanium p-n junction solar cell intended for solar thermophotovoltaic energy conversion which incorporates minority carrier mirrors and optical mirrors on both the front and back boundaries of the active part of the device. The optical mirrors provide light confinement reducing the thickness required for optimum performance while minority carrier mirrors diminish surface recombination of carriers which seriously reduce short circuit current and limit open circuit voltage. The role of non-ideal optical and minority carrier mirrors and the effect of resistivity variations are studied. The calculations are conducted under conditions of high incident power (2-25 W/cm/sup 2/) which are encountered in solar thermophotovoltaic energy conversion systems. 14 refs.

P-N junction solar cell grown by molecular beam epitaxy

International Nuclear Information System (INIS)

Hazrati Fard, M.

2001-01-01

Growth of GaAs epilayers by Molecular Beam Epitaxy was accomplished for the first time in Iran. The layers were grown on GaAs (001) substrates (p+ wafer) with Si impurity for p n junction solar cell fabrication at a rate of nearly one micron per hour and 0.25 micron per quarter. Crystalline quality of grown layers had been monitored during growth by Reflection High Energy Electron Diffraction system. Doping profile and layer thickness was assessed by electrochemical C-V profiling method. Then Hall measurements were conducted on small samples both in room temperature and liquid nitrogen temperature so giving average carrier concentration and compensation ratio. The results as like: V oc , I sc , F F, η were comparable with other laboratory reports. information for obtaining good and repeatable growths was collected. Therefore, the conditions of repeatable quality growth p n junction solar cells onto GaAs (001) substrates were determined

Hydrogen doping of Indium Tin Oxide due to thermal treatment of hetero-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Ritzau, Kurt-Ulrich, E-mail: kurt-ulrich.ritzau@ise.fraunhofer.de [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany); Behrendt, Torge [Infineon Technologies, Max-Planck-Straße 5, 59581 Warstein (Germany); Palaferri, Daniele [Laboratoire Matériaux et Phénomènes Quantiques, Université Paris Diderot, Sorbonne Paris Cité, CNRS—UMR 7162, 75013 Paris (France); Bivour, Martin; Hermle, Martin [Fraunhofer Institute for Solar Energy Systems (ISE), Heidenhofstrasse 2, 79110 Freiburg (Germany)

2016-01-29

Indium Tin Oxide (ITO) layers in silicon hetero junction solar cells change their electrical and optical properties when exposed to temperature treatments. Hydrogen which effuses from underlying amorphous silicon layers is identified to dope the ITO layer. This leads to an additional increase in conductivity. In this way an almost isolating ITO can become degenerately doped through temperature treatments. The resulting carrier density in the range of 10{sup 20} cm{sup −3} leads to a substantial increase in free carrier absorption, which in turn leads to an increased parasitic absorption in the cell device. Thus hydrogen effusion in silicon hetero-junction (SHJ) solar cells does not only affect the degradation of amorphous silicon (a-Si:H) passivation of crystalline silicon (c-Si), but also the electrical and optical properties of both front and back ITO layers. This leads to the further design rule for SHJ solar cells, meaning that ITO properties have to be optimized in the state after modification during temperature treatment. - Highlights: • ITO is additionally doped by heat treatment of silicon hetero-junction solar cells. • The discovered effect turns an almost isolating ITO into a degenerately doped TCO. • TCO properties have to be considered as measured in the final cell.

AlGaAs top solar cell for mechanical attachment in a multi-junction tandem concentrator solar cell stack

Science.gov (United States)

Dinetta, L. C.; Hannon, M. H.; Cummings, J. R.; Mcneeley, J. B.; Barnett, Allen M.

1990-01-01

Free-standing, transparent, tunable bandgap AlxGa1-xAs top solar cells have been fabricated for mechanical attachment in a four terminal tandem stack solar cell. Evaluation of the device results has demonstrated 1.80 eV top solar cells with efficiencies of 18 percent (100 X, and AM0) which would yield stack efficiencies of 31 percent (100 X, AM0) with a silicon bottom cell. When fully developed, the AlxGa1-xAs/Si mechanically-stacked two-junction solar cell concentrator system can provide efficiencies of 36 percent (AM0, 100 X). AlxGa1-xAs top solar cells with bandgaps from 1.66 eV to 2.08 eV have been fabricated. Liquid phase epitaxy (LPE) growth techniques have been used and LPE has been found to yield superior AlxGa1-xAs material when compared to molecular beam epitaxy and metal-organic chemical vapor deposition. It is projected that stack assembly technology will be readily applicable to any mechanically stacked multijunction (MSMJ) system. Development of a wide bandgap top solar cell is the only feasible method for obtaining stack efficiencies greater than 40 percent at AM0. System efficiencies of greater than 40 percent can be realized when the AlGaAs top solar cell is used in a three solar cell mechanical stack.

Numerical investigation of a double-junction a:SiGe thin-film solar cell including the multi-trench region

International Nuclear Information System (INIS)

Kacha, K.; Djeffal, F.; Ferhati, H.; Arar, D.; Meguellati, M.

2015-01-01

We present a new approach based on the multi-trench technique to improve the electrical performances, which are the fill factor and the electrical efficiency. The key idea behind this approach is to introduce a new multi-trench region in the intrinsic layer, in order to modulate the total resistance of the solar cell. Based on 2-D numerical investigation and optimization of amorphous SiGe double-junction (a-Si:H/a-SiGe:H) thin film solar cells, in the present paper numerical models of electrical and optical parameters are developed to explain the impact of the multi-trench technique on the improvement of the double-junction solar cell electrical behavior for high performance photovoltaic applications. In this context, electrical characteristics of the proposed design are analyzed and compared with conventional amorphous silicon double-junction thin-film solar cells. (paper)

An ARC less InGaP/GaAs DJ solar cell with hetero tunnel junction

Science.gov (United States)

Sahoo, G. S.; Nayak, P. P.; Mishra, G. P.

2016-07-01

Multi junction solar cell has not achieved an optimum performance yet. To acquire more conversion efficiency research on multi junction solar cell are in progress. In this work we have proposed a dual junction solar cell with conversion efficiency of 43.603%. Mainly the focus is given on the tunnel diode, window layer and back surface field (BSF) layer of the cell, as all of them plays important role on the cell performance. Here we have designed a hetero InGaP/GaAs tunnel diode which makes tunnel diode more transparent to the bottom cell as well as reduces the recombination at the interfaces. The thickness of the window and BSF layer are optimized to achieve higher conversion efficiency. The simulation is carried out using Silvaco ATLAS TCAD under 1000 sun of AM1.5G spectrum. Different performance parameters of the cell like short circuit current density (Jsc), open circuit voltage (Voc), external quantum efficiency (EQE), fill factor (FF), conversion efficiency (η), spectral response and photogeneration rate of the cell are examined and compared with previously reported literatures. For the proposed model a Voc of 2.7043 V, Jsc of 1898.52 mA/cm2, FF of 88.88% and η of 43.6% are obtained.

Modeling and Design of Graphene GaAs Junction Solar Cell

Directory of Open Access Journals (Sweden)

Yawei Kuang

2015-01-01

Full Text Available Graphene based GaAs junction solar cell is modeled and investigated by Silvaco TCAD tools. The photovoltaic behaviors have been investigated considering structure and process parameters such as substrate thickness, dependence between graphene work function and transmittance, and n-type doping concentration in GaAs. The results show that the most effective region for photo photogenerated carriers locates very close to the interface under light illumination. Comprehensive technological design for junction yields a significant improvement of power conversion efficiency from 0.772% to 2.218%. These results are in good agreement with the reported experimental work.

Investigation of a novel concept for hydrogen production by PEM water electrolysis integrated with multi-junction solar cells

International Nuclear Information System (INIS)

Ferrero, Domenico; Santarelli, Massimo

2017-01-01

Highlights: • A 2D model of a PEM water electrolyzer is developed and validated. • A novel system integrating PEM and multi-junction solar cells is proposed. • The model is applied to the simulation of the novel system. • The integration of PEM and MJ cells enhances the hydrogen production efficiency. - Abstract: A 2D finite element model of a high-pressure PEM water electrolyzer is developed and validated over experimental data obtained from a demonstration prototype. The model includes the electrochemical, fluidic and thermal description of the repeating unit of a PEM electrolyzer stack. The model is applied to the simulation of a novel system composed by a high-temperature, high-pressure PEM electrochemical cell coupled with a photovoltaic multi-junction solar cell installed in a solar concentrator. The thermo-electrochemical characterization of the solar-driven PEM electrolysis system is presented and the advantages of the high-temperature operation and of the direct coupling of electrolyzer and solar cell are assessed. The results show that the integration of the multi-junction cell enhances the performance of the electrolyzer and allows to achieve higher system efficiency compared to separated photovoltaic generation and hydrogen production by electrolysis.

Molecular beam epitaxy of InP single junction and InP/In0.53Ga0.47As monolithically integrated tandem solar cells using solid phosphorous source material

International Nuclear Information System (INIS)

Delaney, A.; Chin, K.; Street, S.; Newman, F.; Aguilar, L.; Ignatiev, A.; Monier, C.; Velela, M.; Freundlich, A.

1998-01-01

This work reports the first InP solar cells, InP/In 0.53 Ga 0.47 As tandem solar cells and InP tunnel junctions to be grown using a solid phosphorous source cracker cell in a molecular beam epitaxy system. High p-type doping achieved with this system allowed for the development of InP tunnel junctions. These junctions which allow for improved current matching in subsequent monolithically integrated tandem devices also do not absorb photons which can be utilized in the InGaAs structure. Photocurrent spectral responses compared favorably to devices previously grown in a chemical beam epitaxy system. High resolution x-ray scans demonstrated good lattice matching between constituent parts of the tandem cell. AM0 efficiencies of both InP and InP/InGaAs tandem cells are reported

Preliminary temperature Accelerated Life Test (ALT) on III-V commercial concentrator triple-junction solar cells

OpenAIRE

Espinet González, Pilar; Algora del Valle, Carlos; Orlando Carrillo, Vincenzo; Nuñez Mendoza, Neftali; Vázquez López, Manuel; Bautista Villares, Jesus; Xiugang, He; Barrutia Poncela, Laura; Rey-Stolle Prado, Ignacio; Araki, Kenji

2012-01-01

A quantitative temperature accelerated life test on sixty GaInP/GaInAs/Ge triple-junction commercial concentrator solar cells is being carried out. The final objective of this experiment is to evaluate the reliability, warranty period, and failure mechanism of high concentration solar cells in a moderate period of time. The acceleration of the degradation is realized by subjecting the solar cells at temperatures markedly higher than the nominal working temperature under a concentrator Three e...

Medium area, flexible single and tandem junction solar cells based on roll coated semi-random copolymers

DEFF Research Database (Denmark)

Andersen, Thomas Rieks; Dam, Henrik Friis; Burkhart, Beate

2014-01-01

laboratory roll-coater using only slot-die coating and flexographic printing under ambient conditions on a flexible ITO-free substrate. In order to overcome a low JSC and FF obtained for single junction devices, devices were also prepared in a tandem geometry making it possible to employ thinner junction...... films. Power conversion efficiencies of up to 1.36% and 1.31% were achieved for the tandem and single junction geometries, respectively....

Photovoltaic Cells Improvised With Used Bipolar Junction Transistors

International Nuclear Information System (INIS)

Akintayo, J. A

2002-01-01

The understanding of the underlying principle that the solar cell consists of a p-n junction is exploited to adapt the basic NPN or PNP Bipolar Junction Transistors (BJT) to serve as solar cells. In this mode the in improvised solar cell have employed just the emitter and the base sections with an intact emitter/base junction as the active PN area. The improvised devices tested screened and sorted are wired up in strings, blocks and modules. The photovoltaic modules realised tested as close replica of solar cells with output voltage following insolation level. Further work need be done on the modules to make them generate usable levels of output voltage and current

A multiple p-n junction structure obtained from as-grown Czochralski silicon crystals by heat treatment - Application to solar cells

Science.gov (United States)

Chi, J. Y.; Gatos, H. C.; Mao, B. Y.

1980-01-01

Multiple p-n junctions have been prepared in as-grown Czochralski p-type silicon through overcompensation near the oxygen periodic concentration maxima by oxygen thermal donors generated during heat treatment at 450 C. Application of the multiple p-n-junction configuration to photovoltaic energy conversion has been investigated. A new solar-cell structure based on multiple p-n-junctions was developed. Theoretical analysis showed that a significant increase in collection efficiency over the conventional solar cells can be achieved.

Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

Energy Technology Data Exchange (ETDEWEB)

Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

2011-07-01

We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

Application of Nanostructured Materials and Multi-junction Structure in Polymer Solar Cells

KAUST Repository

Gao, Yangqin

2015-12-09

polymer absorber, in which the homo-tandem device showed an enhanced power conversion efficiency (PCE) (8.3% vs 7.7%) relative to the optimized single junction PSC. The high open voltage (>1.8 V) achieved in homo-tandem PSCs allowed for water splitting with an estimated solar-to-fuel conversion efficiency of 6%. Lastly, a hybrid tandem cell was also constructed using a polymer and a colloidal quantum dot subcell. Different hybrid tandem device architectures were proposed and show a promising PCE of 6.7%.

Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells

Directory of Open Access Journals (Sweden)

Wen-Jeng Ho

2017-06-01

Full Text Available This study characterized the electrical and optical properties of single-junction GaAs solar cells coated with antireflective layers of silicon dioxide (SiO2, indium tin oxide (ITO, and a hybrid layer of SiO2/ITO applied using Radio frequency (RF sputtering. The conductivity and transparency of the ITO film were characterized prior to application on GaAs cells. Reverse saturation-current and ideality factor were used to evaluate the passivation performance of the various coatings on GaAs solar cells. Optical reflectance and external quantum efficiency response were used to evaluate the antireflective performance of the coatings. Photovoltaic current-voltage measurements were used to confirm the efficiency enhancement obtained by the presence of the anti-reflective coatings. The conversion efficiency of the GaAs cells with an ITO antireflective coating (23.52% exceeded that of cells with a SiO2 antireflective coating (21.92%. Due to lower series resistance and higher short-circuit current-density, the carrier collection of the GaAs cell with ITO coating exceeded that of the cell with a SiO2/ITO coating.

Aberration-corrected transmission electron microscopy analyses of GaAs/Si interfaces in wafer-bonded multi-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Häussler, Dietrich [Institute for Materials Science, Christian-Albrechts-University Kiel, Kaiserstraße 2, 24143 Kiel (Germany); Houben, Lothar [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Research Centre Juelich GmbH, 52425 Juelich (Germany); Essig, Stephanie [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany); Kurttepeli, Mert [Institute for Materials Science, Christian-Albrechts-University Kiel, Kaiserstraße 2, 24143 Kiel (Germany); Dimroth, Frank [Fraunhofer Institute for Solar Energy Systems ISE, Heidenhofstraße 2, 79110 Freiburg (Germany); Dunin-Borkowski, Rafal E. [Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Research Centre Juelich GmbH, 52425 Juelich (Germany); Jäger, Wolfgang, E-mail: wolfgang.jaeger@tf.uni-kiel.de [Institute for Materials Science, Christian-Albrechts-University Kiel, Kaiserstraße 2, 24143 Kiel (Germany)

2013-11-15

Aberration-corrected scanning transmission electron microscopy (STEM) and electron energy loss spectroscopy (EELS) investigations have been applied to investigate the structure and composition fluctuations near interfaces in wafer-bonded multi-junction solar cells. Multi-junction solar cells are of particular interest since efficiencies well above 40% have been obtained for concentrator solar cells which are based on III-V compound semiconductors. In this methodologically oriented investigation, we explore the potential of combining aberration-corrected high-angle annular dark-field STEM imaging (HAADF-STEM) with spectroscopic techniques, such as EELS and energy-dispersive X-ray spectroscopy (EDXS), and with high-resolution transmission electron microscopy (HR-TEM), in order to analyze the effects of fast atom beam (FAB) and ion beam bombardment (IB) activation treatments on the structure and composition of bonding interfaces of wafer-bonded solar cells on Si substrates. Investigations using STEM/EELS are able to measure quantitatively and with high precision the widths and the fluctuations in element distributions within amorphous interface layers of nanometer extensions, including those of light elements. Such measurements allow the control of the activation treatments and thus support assessing electrical conductivity phenomena connected with impurity and dopant distributions near interfaces for optimized performance of the solar cells. - Highlights: • Aberration-corrected TEM and EELS reveal structural and elemental profiles across GaAs/Si bond interfaces in wafer-bonded GaInP/GaAs/Si - multi-junction solar cells. • Fluctuations in elemental concentration in nanometer-thick amorphous interface layers, including the disrubutions of light elements, are measured using EELS. • The projected widths of the interface layers are determined on the atomic scale from STEM-HAADF measurements. • The effects of atom and ion beam activation treatment on the bonding

Optimization of Recombination Layer in the Tunnel Junction of Amorphous Silicon Thin-Film Tandem Solar Cells

Directory of Open Access Journals (Sweden)

Yang-Shin Lin

2011-01-01

Full Text Available The amorphous silicon/amorphous silicon (a-Si/a-Si tandem solar cells have attracted much attention in recent years, due to the high efficiency and low manufacturing cost compared to the single-junction a-Si solar cells. In this paper, the tandem cells are fabricated by high-frequency plasma-enhanced chemical vapor deposition (HF-PECVD at 27.1 MHz. The effects of the recombination layer and the i-layer thickness matching on the cell performance have been investigated. The results show that the tandem cell with a p+ recombination layer and i2/i1 thickness ratio of 6 exhibits a maximum efficiency of 9.0% with the open-circuit voltage (Voc of 1.59 V, short-circuit current density (Jsc of 7.96 mA/cm2, and a fill factor (FF of 0.70. After light-soaking test, our a-Si/a-Si tandem cell with p+ recombination layer shows the excellent stability and the stabilized efficiency of 8.7%.

Modeling and Design of a New Flexible Graphene-on-Silicon Schottky Junction Solar Cell

Directory of Open Access Journals (Sweden)

Francesco Dell’Olio

2016-10-01

Full Text Available A new graphene-based flexible solar cell with a power conversion efficiency >10% has been designed. The environmental stability and the low complexity of the fabrication process are the two main advantages of the proposed device with respect to other flexible solar cells. The designed solar cell is a graphene/silicon Schottky junction whose performance has been enhanced by a graphene oxide layer deposited on the graphene sheet. The effect of the graphene oxide is to dope the graphene and to act as anti-reflection coating. A silicon dioxide ultrathin layer interposed between the n-Si and the graphene increases the open-circuit voltage of the cell. The solar cell optimization has been achieved through a mathematical model, which has been validated by using experimental data reported in literature. The new flexible photovoltaic device can be integrated in a wide range of microsystems powered by solar energy.

Recent Advances in High Efficiency Solar Cells

Institute of Scientific and Technical Information of China (English)

Yoshio; Ohshita; Hidetoshi; Suzuki; Kenichi; Nishimura; Masafumi; Yamaguchi

2007-01-01

1 Results The conversion efficiency of sunlight to electricity is limited around 25%,when we use single junction solar cells. In the single junction cells,the major energy losses arise from the spectrum mismatching. When the photons excite carriers with energy well in excess of the bandgap,these excess energies were converted to heat by the rapid thermalization. On the other hand,the light with lower energy than that of the bandgap cannot be absorbed by the semiconductor,resulting in the losses. One way...

The influence of silicon wafer thickness on characteristics of multijunction solar cells with vertical p—n-junctions

Directory of Open Access Journals (Sweden)

Gnilenko A. B.

2012-02-01

Full Text Available A multijunction silicon solar cell with vertical p–n junctions consisted of four serial n+–p–p+-structures was simulated using Silvaco TCAD software package. The dependence of solar cell characteristics on the silicon wafer thickness is investigated for a wide range of values.

A generic concept to overcome bandgap limitations for designing highly efficient multi-junction photovoltaic cells.

Science.gov (United States)

Guo, Fei; Li, Ning; Fecher, Frank W; Gasparini, Nicola; Ramirez Quiroz, Cesar Omar; Bronnbauer, Carina; Hou, Yi; Radmilović, Vuk V; Radmilović, Velimir R; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J

2015-07-16

The multi-junction concept is the most relevant approach to overcome the Shockley-Queisser limit for single-junction photovoltaic cells. The record efficiencies of several types of solar technologies are held by series-connected tandem configurations. However, the stringent current-matching criterion presents primarily a material challenge and permanently requires developing and processing novel semiconductors with desired bandgaps and thicknesses. Here we report a generic concept to alleviate this limitation. By integrating series- and parallel-interconnections into a triple-junction configuration, we find significantly relaxed material selection and current-matching constraints. To illustrate the versatile applicability of the proposed triple-junction concept, organic and organic-inorganic hybrid triple-junction solar cells are constructed by printing methods. High fill factors up to 68% without resistive losses are achieved for both organic and hybrid triple-junction devices. Series/parallel triple-junction cells with organic, as well as perovskite-based subcells may become a key technology to further advance the efficiency roadmap of the existing photovoltaic technologies.

Thin-film solar cell

NARCIS (Netherlands)

Metselaar, J.W.; Kuznetsov, V.I.

1998-01-01

The invention relates to a thin-film solar cell provided with at least one p-i-n junction comprising at least one p-i junction which is at an angle alpha with that surface of the thin-film solar cell which collects light during operation and at least one i-n junction which is at an angle beta with

InGaP Heterojunction Barrier Solar Cells

Science.gov (United States)

Welser, Roger E. (Inventor)

2014-01-01

A new solar cell structure called a heterojunction barrier solar cell is described. As with previously reported quantum-well and quantum-dot solar cell structures, a layer of narrow band-gap material, such as GaAs or indium-rich InGaP, is inserted into the depletion region of a wide band-gap PN junction. Rather than being thin, however, the layer of narrow band-gap material is about 400-430 nm wide and forms a single, ultrawide well in the depletion region. Thin (e.g., 20-50 nm), wide band-gap InGaP barrier layers in the depletion region reduce the diode dark current. Engineering the electric field and barrier profile of the absorber layer, barrier layer, and p-type layer of the PN junction maximizes photogenerated carrier escape. This new twist on nanostructured solar cell design allows the separate optimization of current and voltage to maximize conversion efficiency.

Results from an International Measurement Round Robin of III-V Triple Junction Solar Cells under Air Mass Zero

Science.gov (United States)

Jenkins, Phillip; Scheiman, Chris; Goodbody, Chris; Baur, Carsten; Sharps, Paul; Imaizumi, Mitsuru; Yoo, Henry; Sahlstrom, Ted; Walters, Robert; Lorentzen, Justin;

Characteristic features of silicon multijunction solar cells with vertical p-n junctions

International Nuclear Information System (INIS)

Guk, E.G.; Nalet, T.A.; Shvarts, M.Z.; Shuman, V.B.

1997-01-01

A relatively simple technology (without photolithography) based on diffusion welding and ion-plasma deposition of an insulating coating has been developed for fabricating multijunction silicon solar cells with vertical p-n junctions. The effective collection factor for such structures is independent of the wavelength of the incident light in the wavelength range λ=340-1080 nm

Correlations for damage in diffused-junction InP solar cells induced by electron and proton irradiation

International Nuclear Information System (INIS)

Yamaguchi, M.; Takamoto, T.; Taylor, S.J.; Walters, R.J.; Summers, G.P.; Flood, D.J.; Ohmori, M.

1997-01-01

The damage to diffused-junction n + -p InP solar cells induced by electron and proton irradiations over a wide range of energy from 0.5 to 3 MeV and 0.015 to 20 MeV, respectively, has been examined. The experimental electron and proton damage coefficients have been analyzed in terms of displacement damage dose, which is the product of the particle fluence and the calculated nonionizing energy loss [G. P. Summers, E. A. Burke, R. Shapiro, S. R. Messenger, and R. J. Walters, IEEE Trans. Nucl. Sci. 40, 1300 (1993).] Degradation of InP cells due to irradiation with electrons and protons with energies of more than 0.5 MeV show a single curve as a function of displacement damage dose. Based on the deep-level transient spectroscopy analysis, damage equivalence between electron and proton irradiation is discussed. InP solar cells are confirmed to be substantially more radiation resistant than Si and GaAs-on-Ge cells. copyright 1997 American Institute of Physics

Plasmonic thin film InP/graphene-based Schottky-junction solar cell using nanorods

Directory of Open Access Journals (Sweden)

Abedin Nematpour

2018-03-01

Full Text Available Herein, the design and simulation of graphene/InP thin film solar cells with a novel periodic array of nanorods and plasmonic back-reflectors of the nano-semi sphere was proposed. In this structure, a single-layer of the graphene sheet was placed on the vertical nanorods of InP to form a Schottky junction. The electromagnetic field was determined using solving three-dimensional Maxwell's equations discretized by the finite difference method (FDM. The enhancement of light trapping in the absorbing layer was illustrated, thereby increasing the short circuit current to a maximum value of 31.57 mA/cm2 with nanorods having a radius of 400 nm, height of 1250 nm, and nano-semi sphere radius of 50 nm, under a solar irradiation of AM1.5G. The maximum ultimate efficiency was determined to be 45.8% for an angle of incidence of 60°. This structure has shown a very good light trapping ability when graphene and ITO layers were used at the top and as a back-reflector in the proposed photonic crystal structure of the InP nanorods. Thence, this structure improves the short-circuit current density and the ultimate efficiency of 12% and 2.7%, respectively, in comparison with the InP-nanowire solar cells.

InGaP solar cell on Ge-on-Si virtual substrate for novel solar power conversion

Science.gov (United States)

Kim, T. W.; Albert, B. R.; Kimerling, L. C.; Michel, J.

2018-02-01

InGaP single-junction solar cells are grown on lattice-matched Ge-on-Si virtual substrates using metal-organic chemical vapor deposition. Optoelectronic simulation results indicate that the optimal collection length for InGaP single-junction solar cells with a carrier lifetime range of 2-5 ns is wider than approximately 1 μm. Electron beam-induced current measurements reveal that the threading dislocation density (TDD) of InGaP solar cells fabricated on Ge and Ge-on-Si substrates is in the range of 104-3 × 107 cm-2. We demonstrate that the open circuit voltage (Voc) of InGaP solar cells is not significantly influenced by TDDs less than 2 × 106 cm-2. Fabricated InGaP solar cells grown on a Ge-on-Si virtual substrate and a Ge substrate exhibit Voc in the range of 0.96 to 1.43 V under an equivalent illumination in the range of ˜0.5 Sun. The estimated efficiency of the InGaP solar cell fabricated on the Ge-on-Si virtual substrate (Ge substrate) at room temperature for the limited incident spectrum spanning the photon energy range of 1.9-2.4 eV varies from 16.6% to 34.3%.

Tandem colloidal quantum dot solar cells employing a graded recombination layer

KAUST Repository

Wang, Xihua; Koleilat, Ghada I.; Tang, Jiang; Liu, Huan; Kramer, Illan J.; Debnath, Ratan; Brzozowski, Lukasz; Barkhouse, D. Aaron R.; Levina, Larissa; Hoogland, Sjoerd; Sargent, Edward H.

2011-01-01

Tuning of the electronic bandgap in colloidal quantum dots (CQDs) by changing their size enables the spectral response of CQD-based photodetectors and photovoltaic devices to be tailored. Multi-junction solar cells made from a combination of CQDs of differing sizes and thus bandgaps are a promising means by which to increase the energy harvested from the Sun's broad spectrum. Here, we report the first CQD tandem solar cells using the size-effect tuning of a single CQD material, PbS. We use a graded recombination layer to provide a progression of work functions from the hole-accepting electrode in the bottom cell to the electron-accepting electrode in the top cell, allowing matched electron and hole currents to meet and recombine. Our tandem solar cell has an open-circuit voltage of 1.06Â V, equal to the sum of the two constituent single-junction devices, and a solar power conversion efficiency of up to 4.2%. © 2011 Macmillan Publishers Limited. All rights reserved.

Tandem colloidal quantum dot solar cells employing a graded recombination layer

KAUST Repository

Wang, Xihua

2011-06-26

Tuning of the electronic bandgap in colloidal quantum dots (CQDs) by changing their size enables the spectral response of CQD-based photodetectors and photovoltaic devices to be tailored. Multi-junction solar cells made from a combination of CQDs of differing sizes and thus bandgaps are a promising means by which to increase the energy harvested from the Sun\\'s broad spectrum. Here, we report the first CQD tandem solar cells using the size-effect tuning of a single CQD material, PbS. We use a graded recombination layer to provide a progression of work functions from the hole-accepting electrode in the bottom cell to the electron-accepting electrode in the top cell, allowing matched electron and hole currents to meet and recombine. Our tandem solar cell has an open-circuit voltage of 1.06Â V, equal to the sum of the two constituent single-junction devices, and a solar power conversion efficiency of up to 4.2%. © 2011 Macmillan Publishers Limited. All rights reserved.

Performace of Dilute Nitride Triple Junction Space Solar Cell Grown by MBE

Directory of Open Access Journals (Sweden)

Aho Arto

2017-01-01

Full Text Available Dilute nitride arsenide antimonide compounds offer widely tailorable band-gaps, ranging from 0.8 eV to 1.4 eV, for the development of lattice-matched multijunction solar cells with three or more junctions. Here we report on the performance of GaInP/GaAs/GaInNAsSb solar cell grown by molecular beam epitaxy. An efficiency of 27% under AM0 conditions is demonstrated. In addition, the cell was measured at different temperatures. The short circuit current density exhibited a temperature coefficient of 0.006 mA/cm2/°C while the corresponding slope for the open circuit voltage was −6.8 mV/°C. Further efficiency improvement, up to 32%, is projected by better current balancing and structural optimization.

9.0% power conversion efficiency from ternary all-polymer solar cells

NARCIS (Netherlands)

Li, Z.; Xu, X.; Zhang, W.; Meng, X.; Genene, Z.; Ma, W.; Mammo, W.; Yartsev, A.; Andersson, M.; Janssen, R.A.J.; Wang, E.

2017-01-01

Integration of a third component into a single-junction polymer solar cell (PSC) is regarded as an attractive strategy to enhance the performance of PSCs. Although binary all-polymer solar cells (all-PSCs) have recently emerged with compelling power conversion efficiencies (PCEs), the PCEs of

Single-step colloidal quantum dot films for infrared solar harvesting

KAUST Repository

Kiani, Amirreza

2016-11-01

Semiconductors with bandgaps in the near- to mid-infrared can harvest solar light that is otherwise wasted by conventional single-junction solar cell architectures. In particular, colloidal quantum dots (CQDs) are promising materials since they are cost-effective, processed from solution, and have a bandgap that can be tuned into the infrared (IR) via the quantum size effect. These characteristics enable them to harvest the infrared portion of the solar spectrum to which silicon is transparent. To date, IR CQD solar cells have been made using a wasteful and complex sequential layer-by-layer process. Here, we demonstrate ∼1 eV bandgap solar-harvesting CQD films deposited in a single step. By engineering a fast-drying solvent mixture for metal iodide-capped CQDs, we deposited active layers greater than 200 nm in thickness having a mean roughness less than 1 nm. We integrated these films into infrared solar cells that are stable in air and exhibit power conversion efficiencies of 3.5% under illumination by the full solar spectrum, and 0.4% through a simulated silicon solar cell filter.

Comparative analysis of photovoltaic principles governing dye-sensitized solar cells and p-n junctions

Science.gov (United States)

Bisquert, Juan; Garcia-Canadas, Jorge; Mora-Sero, Ivan; Palomares, Emilio

2004-02-01

We discuss a generalized model for a solar cell, and the realization with heterogeneous photochemical photovoltaic converters such as the dye-sensitized solar cell. The different steps involved in the conversion of photon energy to electrical energy, indicate that a key point to consider is maintaining the separation of Fermi levels in the selective contacts to the absorber. In order to understand the irreversible processes limiting the efficient operation of the solar cell, it is necessary to obtain a precise description of the internal distribution of Fermi levels. We suggest the equivalent circuit as a central tool for obtaining such description, in relation with small perturbation measurement techniques. The fundamental steps of excitation and charge separation, and the losses by transport and charge transfer, can be represented by suitable circuit elements, and the overall circuit configuration indicates the operation of the selective contacts. The comparison of the equivalent circuits for heterogeneous dye solar cells and solid-state p-n junctions, shows the significant difference in the mechanisms of the selective contacts of these solar cells.

Experimental and Computer Modelling Studies of Metastability of Amorphous Silicon Based Solar Cells

NARCIS (Netherlands)

Munyeme, Geoffrey

2003-01-01

We present a combination of experimental and computer modelling studies of the light induced degradation in the performance of amorphous silicon based single junction solar cells. Of particular interest in this study is the degradation kinetics of different types of amorphous silicon single junction

Development of performance model and optimization strategy for standalone operation of CPV-hydrogen system utilizing multi-junction solar cell

KAUST Repository

Burhan, Muhammad; Shahzad, Muhammad Wakil; Ng, Kim Choon

2017-01-01

Despite highest energy potential, solar energy is only available during diurnal period with varying intensity. Therefore, owing to solar intermittency, solar energy systems need to operate in standalone configuration for steady power supply which requires reliable and sustainable energy storage. Hydrogen production has proved to be the most reliable and sustainable energy storage option for medium and long term operation. However, at the first priority, solar energy must be captured with high efficiency, in order to reduce the overall size of the system and energy storage. Multi-junction solar cells (MJCs) provide highest energy efficiency among all of the photovoltaic technologies and the concentrated photovoltaic (CPV) system concept makes their use cost effective. However, literature is lacking the performance model and optimization strategy for standalone operation of the CPV-hydrogen system. In addition, there is no commercial tool available that can analyze CPV performance, utilizing multi-junction solar cell. This paper proposes the performance model for the CPV-hydrogen systems and the multi-objective optimization strategy for its standalone operation and techno-economic analysis, using micro genetic algorithm (micro-GA). The electrolytic hydrogen production with compression storage and fuel cell, is used as energy storage system. The CPV model is verified for the experimental data of InGaP/InGaAs/Ge triple junction solar cell. An optimal CPV system design is provided for uninterrupted power supply, even under seasonal weather variations. Such approach can be easily integrated with commercial tools and the presented performance data can be used for the design of individual components of the system.

Development of performance model and optimization strategy for standalone operation of CPV-hydrogen system utilizing multi-junction solar cell

KAUST Repository

Burhan, Muhammad

2017-09-16

Despite highest energy potential, solar energy is only available during diurnal period with varying intensity. Therefore, owing to solar intermittency, solar energy systems need to operate in standalone configuration for steady power supply which requires reliable and sustainable energy storage. Hydrogen production has proved to be the most reliable and sustainable energy storage option for medium and long term operation. However, at the first priority, solar energy must be captured with high efficiency, in order to reduce the overall size of the system and energy storage. Multi-junction solar cells (MJCs) provide highest energy efficiency among all of the photovoltaic technologies and the concentrated photovoltaic (CPV) system concept makes their use cost effective. However, literature is lacking the performance model and optimization strategy for standalone operation of the CPV-hydrogen system. In addition, there is no commercial tool available that can analyze CPV performance, utilizing multi-junction solar cell. This paper proposes the performance model for the CPV-hydrogen systems and the multi-objective optimization strategy for its standalone operation and techno-economic analysis, using micro genetic algorithm (micro-GA). The electrolytic hydrogen production with compression storage and fuel cell, is used as energy storage system. The CPV model is verified for the experimental data of InGaP/InGaAs/Ge triple junction solar cell. An optimal CPV system design is provided for uninterrupted power supply, even under seasonal weather variations. Such approach can be easily integrated with commercial tools and the presented performance data can be used for the design of individual components of the system.

Photovoltaic solar cell

Science.gov (United States)

Nielson, Gregory N; Okandan, Murat; Cruz-Campa, Jose Luis; Resnick, Paul J

2013-11-26

A photovoltaic solar cell for generating electricity from sunlight is disclosed. The photovoltaic solar cell comprises a plurality of spaced-apart point contact junctions formed in a semiconductor body to receive the sunlight and generate the electicity therefrom, the plurality of spaced-apart point contact junctions having a first plurality of regions having a first doping type and a second plurality of regions having a second doping type. In addition, the photovoltaic solar cell comprises a first electrical contact electrically connected to each of the first plurality of regions and a second electrical contact electrically connected to each of the second plurality of regions, as well as a passivation layer covering major surfaces and sidewalls of the photovoltaic solar cell.

Effects of Nonuniform Incident Illumination on the Thermal Performance of a Concentrating Triple Junction Solar Cell

Directory of Open Access Journals (Sweden)

Fahad Al-Amri

2014-01-01

Full Text Available A numerical heat transfer model was developed to investigate the temperature of a triple junction solar cell and the thermal characteristics of the airflow in a channel behind the solar cell assembly using nonuniform incident illumination. The effects of nonuniformity parameters, emissivity of the two channel walls, and Reynolds number were studied. The maximum solar cell temperature sharply increased in the presence of nonuniform light profiles, causing a drastic reduction in overall efficiency. This resulted in two possible solutions for solar cells to operate in optimum efficiency level: (i adding new receiver plate with higher surface area or (ii using forced cooling techniques to reduce the solar cell temperature. Thus, surface radiation exchanges inside the duct and Re significantly reduced the maximum solar cell temperature, but a conventional plain channel cooling system was inefficient for cooling the solar cell at medium concentrations when the system was subjected to a nonuniform light distribution. Nonuniformity of the incident light and surface radiation in the duct had negligible effects on the collected thermal energy.

Solar cells

International Nuclear Information System (INIS)

1980-01-01

A method of producing solar cells is described which consists of producing a substantially monocrystalline tubular body of silicon or other suitable semiconductor material, treating this body to form an annular rectifying junction and then cutting it longitudinally to form a number of nearly flat ribbons from which the solar cells are fabricated. The P=N rectifying junction produced by the formation of silicon dioxide on the layers at the inner and outer surfaces of the body can be formed by ion-implantation or diffusion. (U.K.)

Effect of Plasma, RF, and RIE Treatments on Properties of Double-Sided High Voltage Solar Cells with Vertically Aligned p-n Junctions

Directory of Open Access Journals (Sweden)

Mykola O. Semenenko

2016-01-01

Full Text Available Si-based solar cells with vertically aligned p-n junctions operating at high voltage were designed and fabricated. The plasma treatments and antireflection coating deposition on the working surfaces of both single- and multijunction cells were made using the special holders. It was shown that additional treatment of solar cells in argon plasma prior to hydrogen plasma treatment and deposition of diamond-like carbon antireflection films led to the improvement of the cell efficiency by up to 60%. Radio frequency waves support plasma generation and improve photoelectric conversion mainly due to reduction of internal stresses at the interfaces. Application of reactive ion etching technique removes the broken layer, reduces elastic strain in the wafer, decreases recombination of charge carriers in the bulk, and provides cell efficiency increase by up to ten times.

Simulation study of InGaN intermediate-band solar cells

International Nuclear Information System (INIS)

Chen, Kuo-Feng; Hung, Chien-Lun; Tsai, Yao-Lung

2016-01-01

The performances of single-junction InGaN solar cells with various intermediate bands (IBs) have been simulated using the lifetime model of a 1D simulation program called Analysis of Microelectronic and Photonic Structures (AMPS-1D). It has been observed that the maximum efficiencies of the InGaN solar cells with one, two and three intermediate bands are 47.72%, 55.10% and 58.20%, respectively, which outperform the 25.96% efficiency of the conventional single-junction structure by far. This is primarily attributed to the outstanding capability of the light harvesting from the sub-bandgap absorption. At the optimized bandgap of 2.41 eV, two-IB InGaN solar cells with the IB positions located at 0.95–1.1 eV and 0.3–0.75 eV, respectively, may have an opportunity to realize over 50% efficiency. (paper)

Effect of solar-cell junction geometry on open-circuit voltage

Science.gov (United States)

Weizer, V. G.; Godlewski, M. P.

1985-01-01

Simple analytical models have been found that adequately describe the voltage behavior of both the stripe junction and dot junction grating cells as a function of junction area. While the voltage in the former case is found to be insensitive to junction area reduction, significant voltage increases are shown to be possible for the dot junction cell. With regard to cells in which the junction area has been increased in a quest for better performance, it was found that (1) texturation does not affect the average saturation current density J0, indicating that the texturation process is equivalent to a simple extension of junction area by a factor of square root of 3 and (2) the vertical junction cell geometry produces a sizable decrease in J0 that, unfortunately, is more than offset by the effects of attendant areal increases.

High Efficiency Quantum Well Waveguide Solar Cells, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — The long-term objective of this program is to develop flexible, lightweight, single-junction solar cells using quantum structured designs that can achieve ultra-high...

High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

Science.gov (United States)

Venkatasubramanian, R.; Timmons, M. L.; Hutchby, J. A.; Walters, Robert J.; Summers, Geoffrey P.

1994-01-01

We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

Analysis of the photo voltage decay /PVD/ method for measuring minority carrier lifetimes in P-N junction solar cells

Science.gov (United States)

Von Roos, O.

1981-01-01

The photo voltage decay (PVD) method for the measurement of minority carrier lifetimes in P-N junction solar cells with cell thickness comparable to or even less than the minority carrier diffusion length is examined. The method involves the generation of free carriers in the quasi-neutral bulk material by flashes of light and the monitoring of the subsequent decay of the induced open-circuit voltages as the carriers recombine, which is dependent on minority carrier recombination lifetime. It is shown that the voltage versus time curve for an ordinary solar cell (N(+)-P junction) is proportional to the inverse minority carrier lifetime plus a factor expressing the ratio of diffusion length to cell thickness. In the case of an ideal back-surface-field cell (N(+)-P-P(+) junction) however, the slope is directly proportional to the inverse minority carrier lifetime. It is noted that since most BSF cells are not ideal, possessing a sizable back surface recombination velocity, the PVD measurements must be treated with caution and supplemented with other nonstationary methods.

Composite Transparent Electrode of Graphene Nanowalls and Silver Nanowires on Micropyramidal Si for High-Efficiency Schottky Junction Solar Cells.

Science.gov (United States)

Jiao, Tianpeng; Liu, Jian; Wei, Dapeng; Feng, Yanhui; Song, Xuefen; Shi, Haofei; Jia, Shuming; Sun, Wentao; Du, Chunlei

2015-09-16

The conventional graphene-silicon Schottky junction solar cell inevitably involves the graphene growth and transfer process, which results in complicated technology, loss of quality of the graphene, extra cost, and environmental unfriendliness. Moreover, the conventional transfer method is not well suited to conformationally coat graphene on a three-dimensional (3D) silicon surface. Thus, worse interfacial conditions are inevitable. In this work, we directly grow graphene nanowalls (GNWs) onto the micropyramidal silicon (MP) by the plasma-enhanced chemical vapor deposition method. By controlling growth time, the cell exhibits optimal pristine photovoltaic performance of 3.8%. Furthermore, we improve the conductivity of the GNW electrode by introducing the silver nanowire (AgNW) network, which could achieve lower sheet resistance. An efficiency of 6.6% has been obtained for the AgNWs-GNWs-MP solar cell without any chemical doping. Meanwhile, the cell exhibits excellent stability exposed to air. Our studies show a promising way to develop simple-technology, low-cost, high-efficiency, and stable Schottky junction solar cells.

Indium Gallium Nitride Multijunction Solar Cell Simulation Using Silvaco Atlas

Science.gov (United States)

2007-06-01

models is of great interest in space applications. By increasing the efficiency of photovoltaics, the number of solar panels is decreased. Therefore...obtained in single-junction solar cells by using Gallium Arsenide. Monocrystalline Gallium Arsenide has a maximum efficiency of approximately 25.1% [10

3-D modeling of triple junction solar cells on 2-D gratings with optimized intermediate and back reflectors

NARCIS (Netherlands)

Isabella, O.; Elshinawy, M.A.A.; Solntsev, S.; Zeman, M.

2012-01-01

Superstrate thin-film silicon triple-junction solar cells on 2-D gratings were optimized using opto-electrical modeling. Tuning the thickness of intermediate and back reflectors and the band gap of the middle cell resulted in 17% initial efficiency.

A universal route to fabricate n-i-p multi-junction polymer solar cells via solution processing

NARCIS (Netherlands)

Rasi, Dario Di Carlo; Hendriks, Koen H.; Heintges, Gael H. L.; Simone, Giulio; Gelinck, Gerwin H.; Gevaerts, Veronique S.; Andriessen, Ronn; Pirotte, Geert; Maes, Wouter; Li, Weiwei; Wienk, Martijn M.; Janssen, Rene A. J.

The interconnection layer (ICL) that connects adjacent subcells electrically and optically in solution‐processed multi‐junction polymer solar cells must meet functional requirements in terms of work functions, conductivity, and transparency, but also be compatible with the multiple layer stack in

Performance study of solar cell arrays based on a Trough Concentrating Photovoltaic/Thermal system

International Nuclear Information System (INIS)

Li, Ming; Ji, Xu; Li, Guoliang; Wei, Shengxian; Li, YingFeng; Shi, Feng

2011-01-01

Highlights: → The performances of solar cell arrays based on a Trough Concentrating Photovoltaic/Thermal (TCPV/T) system have been studied. → The optimum concentration ratios for the single crystalline silicon cell, the Super cells and the GaAs cells were studied by experiments. → The influences between the solar cell's performance and the series resistances, the working temperature, solar irradiation intensity were explored. - Abstract: The performances of solar cell arrays based on a Trough Concentrating Photovoltaic/Thermal (TCPV/T) system have been studied via both experiment and theoretical calculation. The I-V characteristics of the solar cell arrays and the output performances of the TCPV/T system demonstrated that among the investigated four types of solar cell arrays, the triple junction GaAs cells possessed good performance characteristics and the polysilicon cells exhibited poor performance characteristics under concentrating conditions. The optimum concentration ratios for the single crystalline silicon cell, the Super cells and the GaAs cells were also studied by experiments. The optimum concentration ratios for the single crystalline silicon cells and Super cells were 4.23 and 8.46 respectively, and the triple junction GaAs cells could work well at higher concentration ratio. Besides, some theoretical calculations and experiments were performed to explore the influences of the series resistances and the working temperature. When the series resistances R s changed from 0 Ω to 1 Ω, the maximum power P m of the single crystalline silicon, the polycrystalline silicon, the Super cell and the GaAs cell arrays decreased by 67.78%, 74.93%, 77.30% and 58.07% respectively. When the cell temperature increased by 1 K, the short circuit current of the four types of solar cell arrays decreased by 0.11818 A, 0.05364 A, 0.01387 A and 0.00215 A respectively. The research results demonstrated that the output performance of the solar cell arrays with lower

Design and Photovoltaic Properties of Graphene/Silicon Solar Cell

Science.gov (United States)

Xu, Dikai; Yu, Xuegong; Yang, Lifei; Yang, Deren

2018-04-01

Graphene/silicon (Gr/Si) Schottky junction solar cells have attracted widespread attention for the fabrication of high-efficiency and low-cost solar cells. However, their performance is still limited by the working principles of Schottky junctions. Modulating the working mechanism of the solar cells into a quasi p-n junction has advantages, including higher open-circuit voltage (V OC) and less carrier recombination. In this study, Gr/Si quasi p-n junction solar cells were formed by inserting a tunneling Al2O3 interlayer in-between graphene and silicon, which led to obtain the PCE up to 8.48% without antireflection or chemical doping techniques. Our findings could pave a new way for the development of Gr/Si solar cells.

Development of A Thin Film Crystalline Silicon Solar Cell

International Nuclear Information System (INIS)

Sopori, B.; Chen, W.; Zhang, Y.

1998-01-01

A new design for a single junction, thin film Si solar cell is presented. The cell design is compatible with low-temperature processing required for the use of a low-cost glass substrate, and includes effective light trapping and impurity gettering. Elements of essential process steps are discussed

III-V-on-silicon solar cells reaching 33% photoconversion efficiency in two-terminal configuration

Science.gov (United States)

Cariou, Romain; Benick, Jan; Feldmann, Frank; Höhn, Oliver; Hauser, Hubert; Beutel, Paul; Razek, Nasser; Wimplinger, Markus; Bläsi, Benedikt; Lackner, David; Hermle, Martin; Siefer, Gerald; Glunz, Stefan W.; Bett, Andreas W.; Dimroth, Frank

2018-04-01

Silicon dominates the photovoltaic industry but the conversion efficiency of silicon single-junction solar cells is intrinsically constrained to 29.4%, and practically limited to around 27%. It is possible to overcome this limit by combining silicon with high-bandgap materials, such as III-V semiconductors, in a multi-junction device. Significant challenges associated with this material combination have hindered the development of highly efficient III-V/Si solar cells. Here, we demonstrate a III-V/Si cell reaching similar performances to standard III-V/Ge triple-junction solar cells. This device is fabricated using wafer bonding to permanently join a GaInP/GaAs top cell with a silicon bottom cell. The key issues of III-V/Si interface recombination and silicon's weak absorption are addressed using poly-silicon/SiOx passivating contacts and a novel rear-side diffraction grating for the silicon bottom cell. With these combined features, we demonstrate a two-terminal GaInP/GaAs//Si solar cell reaching a 1-sun AM1.5G conversion efficiency of 33.3%.

Advanced Solar Cells for Satellite Power Systems

Science.gov (United States)

Flood, Dennis J.; Weinberg, Irving

1994-01-01

The multiple natures of today's space missions with regard to operational lifetime, orbital environment, cost and size of spacecraft, to name just a few, present such a broad range of performance requirements to be met by the solar array that no single design can suffice to meet them all. The result is a demand for development of specialized solar cell types that help to optimize overall satellite performance within a specified cost range for any given space mission. Historically, space solar array performance has been optimized for a given mission by tailoring the features of silicon solar cells to account for the orbital environment and average operating conditions expected during the mission. It has become necessary to turn to entirely new photovoltaic materials and device designs to meet the requirements of future missions, both in the near and far term. This paper will outline some of the mission drivers and resulting performance requirements that must be met by advanced solar cells, and provide an overview of some of the advanced cell technologies under development to meet them. The discussion will include high efficiency, radiation hard single junction cells; monolithic and mechanically stacked multiple bandgap cells; and thin film cells.

Hybrid Perovskites: Prospects for Concentrator Solar Cells.

Science.gov (United States)

Lin, Qianqian; Wang, Zhiping; Snaith, Henry J; Johnston, Michael B; Herz, Laura M

2018-04-01

Perovskite solar cells have shown a meteoric rise of power conversion efficiency and a steady pace of improvements in their stability of operation. Such rapid progress has triggered research into approaches that can boost efficiencies beyond the Shockley-Queisser limit stipulated for a single-junction cell under normal solar illumination conditions. The tandem solar cell architecture is one concept here that has recently been successfully implemented. However, the approach of solar concentration has not been sufficiently explored so far for perovskite photovoltaics, despite its frequent use in the area of inorganic semiconductor solar cells. Here, the prospects of hybrid perovskites are assessed for use in concentrator solar cells. Solar cell performance parameters are theoretically predicted as a function of solar concentration levels, based on representative assumptions of charge-carrier recombination and extraction rates in the device. It is demonstrated that perovskite solar cells can fundamentally exhibit appreciably higher energy-conversion efficiencies under solar concentration, where they are able to exceed the Shockley-Queisser limit and exhibit strongly elevated open-circuit voltages. It is therefore concluded that sufficient material and device stability under increased illumination levels will be the only significant challenge to perovskite concentrator solar cell applications.

Advances in High-Efficiency III-V Multijunction Solar Cells

Directory of Open Access Journals (Sweden)

Richard R. King

2007-01-01

Full Text Available The high efficiency of multijunction concentrator cells has the potential to revolutionize the cost structure of photovoltaic electricity generation. Advances in the design of metamorphic subcells to reduce carrier recombination and increase voltage, wide-band-gap tunnel junctions capable of operating at high concentration, metamorphic buffers to transition from the substrate lattice constant to that of the epitaxial subcells, concentrator cell AR coating and grid design, and integration into 3-junction cells with current-matched subcells under the terrestrial spectrum have resulted in new heights in solar cell performance. A metamorphic Ga0.44In0.56P/Ga0.92In0.08As/ Ge 3-junction solar cell from this research has reached a record 40.7% efficiency at 240 suns, under the standard reporting spectrum for terrestrial concentrator cells (AM1.5 direct, low-AOD, 24.0 W/cm2, 25∘C, and experimental lattice-matched 3-junction cells have now also achieved over 40% efficiency, with 40.1% measured at 135 suns. This metamorphic 3-junction device is the first solar cell to reach over 40% in efficiency, and has the highest solar conversion efficiency for any type of photovoltaic cell developed to date. Solar cells with more junctions offer the potential for still higher efficiencies to be reached. Four-junction cells limited by radiative recombination can reach over 58% in principle, and practical 4-junction cell efficiencies over 46% are possible with the right combination of band gaps, taking into account series resistance and gridline shadowing. Many of the optimum band gaps for maximum energy conversion can be accessed with metamorphic semiconductor materials. The lower current in cells with 4 or more junctions, resulting in lower I2R resistive power loss, is a particularly significant advantage in concentrator PV systems. Prototype 4-junction terrestrial concentrator cells have been grown by metal-organic vapor-phase epitaxy, with preliminary measured

Correlative microscopy of radial junction nanowire solar cells using nanoindent position markers

Czech Academy of Sciences Publication Activity Database

Fejfar, Antonín; Hývl, Matěj; Vetushka, Aliaksi; Pikna, Peter; Hájková, Zdeňka; Ledinský, Martin; Kočka, Jan; Klapetek, P.; Marek, A.; Mašková, A.; Vyskočil, J.; Merkel, J.; Becker, Ch.; Itoh, T.; Misra, S.; Foldyna, M.; Yu, L.; Roca i Cabarrocas, P.

2015-01-01

Roč. 135, SI (2015), s. 106-112 ISSN 0927-0248 R&D Projects: GA MŠk 7E10061; GA MŠk(CZ) LM2011026; GA ČR GA13-12386S EU Projects: European Commission(XE) 240826 - PolySiMode Grant - others:AVČR(CZ) M100101216; AVČR(CZ) M100101217 Institutional support: RVO:68378271 Keywords : radial junction solar cells * silicon nanowires * thin films * structural disorder * conductive AFM * nanoindentation * correlative microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.732, year: 2015

A new MATLAB/Simulink model of triple-junction solar cell and MPPT based on artificial neural networks for photovoltaic energy systems

Directory of Open Access Journals (Sweden)

Hegazy Rezk

2015-09-01

Full Text Available This paper presents a new Matlab/Simulink model of a PV module and a maximum power point tracking (MPPT system for high efficiency InGaP/InGaAs/Ge triple-junction solar cell. The proposed technique is based on Artificial Neural Network. The equivalent circuit model of the triple-junction solar cell includes the parameters of each sub-cell. It is also include the effect of the temperature variations on the energy gap of each sub-cell as well as the diode reverse saturation currents. The implementation of a PV model is based on the triple-junction solar cell in the form of masked block in Matlab/Simulink software package that has a user-friendly icon and dialog. It is fast and accurate technique to follow the maximum power point. The simulation results of the proposed MPPT technique are compared with Perturb and Observe MPPT technique. The output power and energy of the proposed technique are higher than that of the Perturb and Observe MPPT technique. The proposed technique increases the output energy per day for a one PV module from 3.37 kW h to 3.75 kW h, i.e. a percentage of 11.28%.

Exceptionally omnidirectional broadband light harvesting scheme for multi-junction concentrator solar cells achieved via ZnO nanoneedles

KAUST Repository

Yeh, Li-Ko; Tian, Wei-Cheng; Lai, Kun-Yu; He, Jr-Hau

2016-01-01

GaInP/GaAs/Ge triple-junction concentrator solar cells with significant efficiency enhancement were demonstrated with antireflective ZnO nanoneedles. The novel nanostructure was attained with a Zn(NO3)2-based solution containing vitamin C. Under one sun AM 1.5G solar spectrum, conversion efficiency of the triple-junction device was improved by 23.7% via broadband improvement in short-circuit currents of 3 sub-cells after the coverage by the nanoneedles with a graded refractive index profile. The efficiency enhancement further went up to 45.8% at 100 suns. The performance boost through the nanoneedles also became increasingly pronounced in the conditions of high incident angles and the cloudy weather, e.g. 220.0% of efficiency enhancement was observed at the incident angle of 60°. These results were attributed to the exceptional broadband omnidirectionality of the antireflective nanoneedles.

Exceptionally omnidirectional broadband light harvesting scheme for multi-junction concentrator solar cells achieved via ZnO nanoneedles

KAUST Repository

Yeh, Li-Ko

2016-12-14

GaInP/GaAs/Ge triple-junction concentrator solar cells with significant efficiency enhancement were demonstrated with antireflective ZnO nanoneedles. The novel nanostructure was attained with a Zn(NO3)2-based solution containing vitamin C. Under one sun AM 1.5G solar spectrum, conversion efficiency of the triple-junction device was improved by 23.7% via broadband improvement in short-circuit currents of 3 sub-cells after the coverage by the nanoneedles with a graded refractive index profile. The efficiency enhancement further went up to 45.8% at 100 suns. The performance boost through the nanoneedles also became increasingly pronounced in the conditions of high incident angles and the cloudy weather, e.g. 220.0% of efficiency enhancement was observed at the incident angle of 60°. These results were attributed to the exceptional broadband omnidirectionality of the antireflective nanoneedles.

Development of III-Sb Quantum Dot Systems for High Efficiency Intermediate Band Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Huffaker, Diana [Univ. of California, Los Angeles, CA (United States); Hubbard, Seth [Rochester Inst. of Technology, NY (United States); Norman, Andrew [National Renewable Energy Lab. (NREL), Golden, CO (United States)

2015-07-31

This project aimed to develop solar cells that can help reduce cost per watt. This work focused on developing solar cells that utilize quantum dot (QD) nanomaterials to provide multijunction solar cell efficiency at the cost of single junction solar cell. We focused on a novel concept known as intermediate band solar cells (IBSC) where an additional energy band is inserted in a single solar cell to accommodate sub-bandgap photons absorption which otherwise are lost through transmission. The additional energy band can be achieved by growing QDs within a solar cell p-n junction. Though numerous studies have been conducted to develop such QD systems, very small improvements in solar energy conversion efficiency have been reported. This is mainly due to non-optimal material parameters such as band gap, band offset etc. In this work, we identified and developed a novel QD material system that meets the requirements of IBSC more closely than the current state-of-the-art technology. To achieve these goals, we focused on three important areas of solar cell design: band structure calculations of new materials, efficient device design for high efficiency, and development of new semiconductor materials. In this project, we focused on III-Sb materials as they possess a wide range of energy bandgaps from 0.2 eV to 2eV. Despite the difficulty involved in realizing these materials, we were successfully developed these materials through a systematic approach. Materials studied in this work are AlAsSb (Aluminum Arsenide Antimonide), InAlAs (Indium Aluminum Arsenide) and InAs (Indium Arsenide). InAs was used to develop QD layers within AlAsSb and InAlAs p-n junctions. As the QDs have very small volume, up to 30 QD layers been inserted into the p-n junction to enhance light absorption. These QD multi-stack devices helped in understanding the challenges associated with the development of quantum dot solar cells. The results from this work show that the quantum dot solar cells indeed

Single-Walled Carbon Nanotubes in Solar Cells.

Science.gov (United States)

Jeon, Il; Matsuo, Yutaka; Maruyama, Shigeo

2018-01-22

Photovoltaics, more generally known as solar cells, are made from semiconducting materials that convert light into electricity. Solar cells have received much attention in recent years due to their promise as clean and efficient light-harvesting devices. Single-walled carbon nanotubes (SWNTs) could play a crucial role in these devices and have been the subject of much research, which continues to this day. SWNTs are known to outperform multi-walled carbon nanotubes (MWNTs) at low densities, because of the difference in their optical transmittance for the same current density, which is the most important parameter in comparing SWNTs and MWNTs. SWNT films show semiconducting features, which make SWNTs function as active or charge-transporting materials. This chapter, consisting of two sections, focuses on the use of SWNTs in solar cells. In the first section, we discuss SWNTs as a light harvester and charge transporter in the photoactive layer, which are reviewed chronologically to show the history of the research progress. In the second section, we discuss SWNTs as a transparent conductive layer outside of the photoactive layer, which is relatively more actively researched. This section introduces SWNT applications in silicon solar cells, organic solar cells, and perovskite solar cells each, from their prototypes to recent results. As we go along, the science and prospects of the application of solar cells will be discussed.

Photovoltaic enhancement of Si solar cells by assembled carbon nanotubes

Institute of Scientific and Technical Information of China (English)

Y.F.Zhang; Y.F.Wang; N.Chen; Y.Y.Wang; Y.Z.Zhang; Z.H.Zhou; L.M.Wei

2010-01-01

Photovoltaic conversion was enhanced by directly assemble of a network of single-walled carbon nanotubes（SWNTs） onto the surface of n-p junction silicon solar cells. When the density of SWNTs increased from 50 to 400 tubes μm-2, an enhancement of 3.92% in energy conversion efficiency was typically obtained. The effect of the SWNTs network is proposed for trapping incident photons and assisting electronic transportation at the interface of silicon solar cells.

Photovoltaic solar cell

Science.gov (United States)

Nielson, Gregory N.; Gupta, Vipin P.; Okandan, Murat; Watts, Michael R.

2015-09-08

A photovoltaic solar concentrator is disclosed with one or more transverse-junction solar cells (also termed point contact solar cells) and a lens located above each solar cell to concentrate sunlight onto the solar cell to generate electricity. Piezoelectric actuators tilt or translate each lens to track the sun using a feedback-control circuit which senses the electricity generated by one or more of the solar cells. The piezoelectric actuators can be coupled through a displacement-multiplier linkage to provide an increased range of movement of each lens. Each lens in the solar concentrator can be supported on a frame (also termed a tilt plate) having three legs, with the movement of the legs being controlled by the piezoelectric actuators.

Cost analysis of roll-to-roll fabricated ITO free single and tandem organic solar modules based on data from manufacture

DEFF Research Database (Denmark)

Machui, Florian; Hösel, Markus; Li, Ning

2014-01-01

We present a cost analysis based on state of the art printing and coating processes to fully encapsulated, flexible ITO- and vacuum-free polymer solar cell modules. Manufacturing data for both single junctions and tandem junctions are presented and analyzed. Within this calculation the most...

High-Efficiency Silicon/Organic Heterojunction Solar Cells with Improved Junction Quality and Interface Passivation.

Science.gov (United States)

He, Jian; Gao, Pingqi; Ling, Zhaoheng; Ding, Li; Yang, Zhenhai; Ye, Jichun; Cui, Yi

2016-12-27

Silicon/organic heterojunction solar cells (HSCs) based on conjugated polymers, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS), and n-type silicon (n-Si) have attracted wide attention due to their potential advantages of high efficiency and low cost. However, the state-of-the-art efficiencies are still far from satisfactory due to the inferior junction quality. Here, facile treatments were applied by pretreating the n-Si wafer in tetramethylammonium hydroxide (TMAH) solution and using a capping copper iodide (CuI) layer on the PEDOT:PSS layer to achieve a high-quality Schottky junction. Detailed photoelectric characteristics indicated that the surface recombination was greatly suppressed after TMAH pretreatment, which increased the thickness of the interfacial oxide layer. Furthermore, the CuI capping layer induced a strong inversion layer near the n-Si surface, resulting in an excellent field effect passivation. With the collaborative improvements in the interface chemical and electrical passivation, a competitive open-circuit voltage of 0.656 V and a high fill factor of 78.1% were achieved, leading to a stable efficiency of over 14.3% for the planar n-Si/PEDOT:PSS HSCs. Our findings suggest promising strategies to further exploit the full voltage as well as efficiency potentials for Si/organic solar cells.

Design and optimization of the plasmonic graphene/InP thin-film solar-cell structure

Science.gov (United States)

Nematpour, Abedin; Nikoufard, Mahmoud; Mehragha, Rouholla

2018-06-01

In this paper, a graphene/InP thin-film Schottky-junction solar cell with a periodic array of plasmonic back-reflector is proposed. In this structure, a single-layer graphene sheet is deposited on the surface of the InP to form a Schottky junction. Then, the layer stack of the proposed solar-cell is optimized to have a maximum optical absorption of 〈A W〉  =  0.985 (98.5%) and short-circuit current density of J sc  =  33.01 mA cm‑2.

Realization of p-n junction solar cells by an ion implantation doping procedure

International Nuclear Information System (INIS)

Muller, J.C.; Hage-Ali, M.; Siffert, P.

1978-01-01

The possibility of using a low cost ion implantation procedure for the preparation of junction solar cells has been investigated. The method employs a d.c. glow discharge ion source and a short post acceleration structure, without any mass separation. Preparation of the cells in a continuous way is possible at competitive speeds since the ion beam current density reaches 1 mA/cm 2 . The properties of silicon cells, obtained by discharge bombardment in BF 3 or PF 5 atmosphere followed by recristallisation of the damaged layer either by thermal annealing or fast surface laser pulses, have been investigated. Rutherford backscattering, SIMS, electrical measurements have been used. Finally, characteristics and performance of the devices are presented

An optimized efficient dual junction InGaN/CIGS solar cell: A numerical simulation

Science.gov (United States)

Farhadi, Bita; Naseri, Mosayeb

2016-08-01

The photovoltaic performance of an efficient double junction InGaN/CIGS solar cell including a CdS antireflector top cover layer is studied using Silvaco ATLAS software. In this study, to gain a desired structure, the different design parameters, including the CIGS various band gaps, the doping concentration and the thickness of CdS layer are optimized. The simulation indicates that under current matching condition, an optimum efficiency of 40.42% is achieved.

Three-terminal heterojunction bipolar transistor solar cell for high-efficiency photovoltaic conversion.

Science.gov (United States)

Martí, A; Luque, A

2015-04-22

Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base-emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical importance of this result relies on the simplicity of the structure that reduces the number of layers that are required to match the limiting efficiency of dual-junction solar cells without using tunnel junctions. The device naturally emerges as a three-terminal solar cell and can also be used as building block of multijunction solar cells with an increased number of junctions.

Origin of the Degradation of Triple Junction Solar Cells at low Temperature

Directory of Open Access Journals (Sweden)

Park Seonyong

2017-01-01

Full Text Available The degradation of solar cells under irradiation by high energy particles (electrons, protons is the consequence of the introduction of defects trapping minority carriers, which are then not collected by the junction. However, at low temperature, defects located in the space charge region can also induce a tunneling current that results in an apparent decreases of the maximum power. The degradation produced by this tunneling current can depend on temperature, since the concentration of defects created by an irradiation is usually temperature dependent, and can be larger than the degradation associated with carrier recombination. For instance, as we shall see below, an irradiation with 1 MeV electrons at 120 K with a fluence of 3.0 × 1015 /cm2 induces a decrease of less than 10 % in the short-circuit current (Isc and open-circuit voltage (Voc of triple junction (TJ cells, but a decrease of about 40 % in the maximum power (Pmax, which implies that more than half of the total degradation of Pmax should be assigned to another loss mechanism, tunneling in this case. In this work, we demonstrate that this additional degradation must indeed be ascribed to a tunneling process and we investigate the variation of the tunneling current versus fluence induced by electron irradiation in TJ cells, in order to tentatively ascribe the tunneling components to specific sub-cells.

Integrating a Semitransparent, Fullerene-Free Organic Solar Cell in Tandem with a BiVO4 Photoanode for Unassisted Solar Water Splitting.

Science.gov (United States)

Peng, Yuelin; Govindaraju, Gokul V; Lee, Dong Ki; Choi, Kyoung-Shin; Andrew, Trisha L

2017-07-12

We report an unassisted solar water splitting system powered by a diketopyrrolopyrrole (DPP)-containing semitransparent organic solar cell. Two major merits of this fullerene-free solar cell enable its integration with a BiVO 4 photoanode. First is the high open circuit voltage and high fill factor displayed by this single junction solar cell, which yields sufficient power to effect water splitting when serially connected to an appropriate electrode/catalyst. Second, the wavelength-resolved photoaction spectrum of the DPP-based solar cell has minimal overlap with that of the BiVO 4 photoanode, thus ensuring that light collection across these two components can be optimized. The latter feature enables a new water splitting device configuration wherein the solar cell is placed first in the path of incident light, before the BiVO 4 photoanode, although BiVO 4 has a wider bandgap. This configuration is accessed by replacing the reflective top electrode of the standard DPP-based solar cell with a thin metal film and an antireflection layer, thus rendering the solar cell semitransparent. In this configuration, incident light does not travel through the aqueous electrolyte to reach the solar cell or photoanode, and therefore, photon losses due to the scattering of water are reduced. Moreover, this new configuration allows the BiVO 4 photoanode to be back-illuminated, i.e., through the BiVO 4 /back contact interface, which leads to higher photocurrents compared to front illumination. The combination of a semitransparent single-junction solar cell and a BiVO 4 photoanode coated with oxygen evolution catalysts in a new device configuration yielded an unassisted solar water splitting system with a solar-to-hydrogen conversion efficiency of 2.2% in water.

Investigating inhomogeneous electronic properties of radial junction solar cells using correlative microscopy

Czech Academy of Sciences Publication Activity Database

Müller, Martin; Hývl, Matěj; Kratzer, M.; Teichert, C.; Misra, S.; Foldyna, M.; Yu, L.; Roca i Cabarrocas, P.; Itoh, T.; Hájková, Zdeňka; Vetushka, Aliaksi; Ledinský, Martin; Kočka, Jan; Fejfar, Antonín

2015-01-01

Roč. 54, č. 8 (2015), "08KA08-1"-"08KA08-5" ISSN 0021-4922 R&D Projects: GA ČR GA14-15357S; GA MŠk(CZ) 7AMB14ATE004; GA ČR GA13-25747S; GA ČR GA13-12386S; GA MŠk(CZ) LM2011026; GA ČR GB14-37427G Grant - others:AVČR(CZ) M100101217 Institutional support: RVO:68378271 Keywords : solar cells * radial junctions * silicon nanowires * correlative microscopy Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.122, year: 2015

Life cycle analysis of organic tandem solar cells: When are they warranted?

DEFF Research Database (Denmark)

Espinosa Martinez, Nieves; Krebs, Frederik C

2014-01-01

in their making when compared with the single junction solar cell has to be justified and compensated by a higher efficiency. A central question to ask is how much energy you need to invest in a system in order for it to produce energy and return the investment at least once and preferably a number of times....... As an initial investigation into the potential viability of the tandem or multi-junction approach we have engaged in a detailed analysis based on the manufacturing energy for each step within the tandem module supply chain for full ambient processing of thin flexible polymer tandem solar cells prepared entirely...

Investigating the electronic properties of multi-junction ZnS/CdS/CdTe graded bandgap solar cells

Energy Technology Data Exchange (ETDEWEB)

Olusola, O.I., E-mail: olajideibk@yahoo.com [Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom); Department of Physics, School of Science, The Federal University of Technology, Akure (FUTA), P.M.B. 704 (Nigeria); Madugu, M.L.; Dharmadasa, I.M. [Electronic Materials and Sensors Group, Materials and Engineering Research Institute, Sheffield Hallam University, Sheffield S1 1WB (United Kingdom)

2017-04-15

The fabrication of multi-junction graded bandgap solar cells have been successfully implemented by electroplating three binary compound semiconductors from II-VI family. The three semiconductor materials grown by electroplating techniques are ZnS, CdS and CdTe thin films. The electrical conductivity type and energy bandgap of each of the three semiconductors were determined using photoelectrochemical (PEC) cell measurement and UV–Vis spectrophotometry techniques respectively. The PEC cell results show that all the three semiconductor materials have n-type electrical conductivity. These two material characterisation techniques were considered in this paper in order to establish the relevant energy band diagram for device results, analysis and interpretation. Solar cells with the device structure glass/FTO/n-ZnS/n-CdS/n-CdTe/Au were then fabricated and characterised using current-voltage (I-V) and capacitance-voltage (C-V) techniques. From the I-V characteristics measurement, the fabricated device structures yielded an open circuit voltage (V{sub oc}) of 670 mV, short circuit current density (J{sub sc}) of 41.5 mA cm{sup −2} and fill-factor (FF) of 0.46 resulting in ∼12.8% efficiency when measured at room temperature under AM1.5 illumination conditions. The device structure showed an excellent rectification factor (RF) of 10{sup 4.3} and ideality factor (n) of 1.88. The results obtained from the C-V measurement also showed that the device structures have a moderate doping level of 5.2 × 10{sup 15} cm{sup −3}. - Highlights: • Electroplating of n-ZnS, n-CdS and n-CdTe binary compound semiconductors. • Fabrication of Schottky barrier solar cells from glass/FTO/n-ZnS/n-CdS/n-CdTe/Au. • Development of multi-junction graded bandgap solar cells using n-n-n structures.

High Radiation Resistance IMM Solar Cell

Science.gov (United States)

Pan, Noren

2015-01-01

Due to high launch costs, weight reduction is a key driver for the development of new solar cell technologies suitable for space applications. This project is developing a unique triple-junction inverted metamorphic multijunction (IMM) technology that enables the manufacture of very lightweight, low-cost InGaAsP-based multijunction solar cells. This IMM technology consists of indium (In) and phosphorous (P) solar cell active materials, which are designed to improve the radiation-resistant properties of the triple-junction solar cell while maintaining high efficiency. The intrinsic radiation hardness of InP materials makes them of great interest for building solar cells suitable for deployment in harsh radiation environments, such as medium Earth orbit and missions to the outer planets. NASA Glenn's recently developed epitaxial lift-off (ELO) process also will be applied to this new structure, which will enable the fabrication of the IMM structure without the substrate.

Questionable effects of antireflective coatings on inefficiently cooled solar cells

DEFF Research Database (Denmark)

Akhmatov, Vladislav; Galster, Georg; Larsen, Esben

1998-01-01

of the output power and efficiency curves throughout the day the coherence between technical parameters of the solar cells and the climate in the operation region is observed and examined. It is shown how the drop in output power around noon can be avoided by fitting technical parameters of the solar cells......A model for temperature effects in p-n junction solar cells is introduced. The temperature of solar cells and the losses in the solar cell junction region caused by elevating temperature are discussed. The model developed is examined for low-cost silicon solar cells. In order to improve the shape...

Modulated surface textures for enhanced scattering in thin-film silicon solar cells

NARCIS (Netherlands)

Isabella, O.; Battaglia, C.; Ballif, C.; Zeman, M.

2012-01-01

Nano-scale randomly textured front transparent oxides are superposed on micro-scale etched glass substrates to form modulated surface textures. The resulting enhanced light scattering is implemented in single and double junction thin-film silicon solar cells.

Modeling Three-Terminal III-V/Si Tandem Solar Cells: Preprint

Energy Technology Data Exchange (ETDEWEB)

Warren, Emily L.; Deceglie, Michael G.; Stradins, Paul; Tamboli, Adele C.

2017-06-27

Three-terminal (3T) tandem cells fabricated by combining an interdigitated back contact (IBC) Si device with a wider bandgap top cell have the potential to provide a robust operating mechanism to efficiently capture the solar spectrum without the need to current match sub-cells or fabricate complicated metal interconnects between cells. Here we develop a two dimensional device physics model to study the behavior of IBC Si solar cells operated in a 3T configuration. We investigate how different cell designs impact device performance and discuss the analysis protocol used to understand and optimize power produced from a single junction, 3T device.

Method of making quasi-grain boundary-free polycrystalline solar cell structure and solar cell structure obtained thereby

Science.gov (United States)

Gonzalez, Franklin N.; Neugroschel, Arnost

1984-02-14

A new solar cell structure is provided which will increase the efficiency of polycrystalline solar cells by suppressing or completely eliminating the recombination losses due to the presence of grain boundaries. This is achieved by avoiding the formation of the p-n junction (or other types of junctions) in the grain boundaries and by eliminating the grain boundaries from the active area of the cell. This basic concept can be applied to any polycrystalline material; however, it will be most beneficial for cost-effective materials having small grains, including thin film materials.

Pairing of near-ultraviolet solar cells with electrochromic windows for smart management of the solar spectrum

Science.gov (United States)

Davy, Nicholas C.; Sezen-Edmonds, Melda; Gao, Jia; Lin, Xin; Liu, Amy; Yao, Nan; Kahn, Antoine; Loo, Yueh-Lin

2017-08-01

Current smart window technologies offer dynamic control of the optical transmission of the visible and near-infrared portions of the solar spectrum to reduce lighting, heating and cooling needs in buildings and to improve occupant comfort. Solar cells harvesting near-ultraviolet photons could satisfy the unmet need of powering such smart windows over the same spatial footprint without competing for visible or infrared photons, and without the same aesthetic and design constraints. Here, we report organic single-junction solar cells that selectively harvest near-ultraviolet photons, produce open-circuit voltages eclipsing 1.6 V and exhibit scalability in power generation, with active layers (10 cm2) substantially larger than those typical of demonstration organic solar cells (0.04-0.2 cm2). Integration of these solar cells with a low-cost, polymer-based electrochromic window enables intelligent management of the solar spectrum, with near-ultraviolet photons powering the regulation of visible and near-infrared photons for natural lighting and heating purposes.

Forward Technology Solar Cell Experiment First On-Orbit Data

Science.gov (United States)

Walters, R. J.; Garner, J. C.; Lam, S. N.; Vazquez, J. A.; Braun, W. R.; Ruth, R. E.; Warner, J. H.; Lorentzen, J. R.; Messenger, S. R.; Bruninga, R.;

Low-Cost Multi-Junction Photovoltaic Cells, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — The proposed SBIR project will provide a pathway to dramatically reduce the cost of multi-junction solar cells. The project leverages a TRL6 micropackaging process...

Design issues for optimum solar cell configuration

Science.gov (United States)

Kumar, Atul; Thakur, Ajay D.

2018-05-01

A computer based simulation of solar cell structure is performed to study the optimization of pn junction configuration for photovoltaic action. The fundamental aspects of photovoltaic action viz, absorption, separation collection, and their dependence on material properties and deatails of device structures is discussed. Using SCAPS 1D we have simulated the ideal pn junction and shown the effect of band offset and carrier densities on solar cell performance. The optimum configuration can be achieved by optimizing transport of carriers in pn junction under effect of field dependent recombination (tunneling) and density dependent recombination (SRH, Auger) mechanisms.

Bi-Sn alloy catalyst for simultaneous morphology and doping control of silicon nanowires in radial junction solar cells

International Nuclear Information System (INIS)

Yu, Zhongwei; Lu, Jiawen; Qian, Shengyi; Xu, Jun; Xu, Ling; Wang, Junzhuan; Shi, Yi; Chen, Kunji; Misra, Soumyadeep; Roca i Cabarrocas, Pere; Yu, Linwei

2015-01-01

Low-melting point metals such as bismuth (Bi) and tin (Sn) are ideal choices for mediating a low temperature growth of silicon nanowires (SiNWs) for radial junction thin film solar cells. The incorporation of Bi catalyst atoms leads to sufficient n-type doping in the SiNWs core that exempts the use of hazardous dopant gases, while an easy morphology control with pure Bi catalyst has never been demonstrated so far. We here propose a Bi-Sn alloy catalyst strategy to achieve both a beneficial catalyst-doping and an ideal SiNW morphology control. In addition to a potential of further growth temperature reduction, we show that the alloy catalyst can remain quite stable during a vapor-liquid-solid growth, while providing still sufficient n-type catalyst-doping to the SiNWs. Radial junction solar cells constructed over the alloy-catalyzed SiNWs have demonstrated a strongly enhanced photocurrent generation, thanks to optimized nanowire morphology, and largely improved performance compared to the reference samples based on the pure Bi or Sn-catalyzed SiNWs

Design of Semiconductor-Based Back Reflectors for High Voc Monolithic Multijunction Solar Cells: Preprint

Energy Technology Data Exchange (ETDEWEB)

Garcia, I.; Geisz, J.; Steiner, M.; Olson, J.; Friedman, D.; Kurtz, S.

2012-06-01

State-of-the-art multijunction cell designs have the potential for significant improvement before going to higher number of junctions. For example, the Voc can be substantially increased if the photon recycling taking place in the junctions is enhanced. This has already been demonstrated (by Alta Devices) for a GaAs single-junction cell. For this, the loss of re-emitted photons by absorption in the underlying layers or substrate must be minimized. Selective back surface reflectors are needed for this purpose. In this work, different architectures of semiconductor distributed Bragg reflectors (DBR) are assessed as the appropriate choice for application in monolithic multijunction solar cells. Since the photon re-emission in the photon recycling process is spatially isotropic, the effect of the incident angle on the reflectance spectrum is of central importance. In addition, the DBR structure must be designed taking into account its integration into the monolithic multijunction solar cells, concerning series resistance, growth economics, and other issues. We analyze the tradeoffs in DBR design complexity with all these requirements to determine if such a reflector is suitable to improve multijunction solar cells.

Quantum-Dot-Based Solar Cells: Recent Advances, Strategies, and Challenges.

Science.gov (United States)

Kim, Mee Rahn; Ma, Dongling

2015-01-02

Among next-generation photovoltaic systems requiring low cost and high efficiency, quantum dot (QD)-based solar cells stand out as a very promising candidate because of the unique and versatile characteristics of QDs. The past decade has already seen rapid conceptual and technological advances on various aspects of QD solar cells, and diverse opportunities, which QDs can offer, predict that there is still ample room for further development and breakthroughs. In this Perspective, we first review the attractive advantages of QDs, such as size-tunable band gaps and multiple exciton generation (MEG), beneficial to solar cell applications. We then analyze major strategies, which have been extensively explored and have largely contributed to the most recent and significant achievements in QD solar cells. Finally, their high potential and challenges are discussed. In particular, QD solar cells are considered to hold immense potential to overcome the theoretical efficiency limit of 31% for single-junction cells.

Artifact Interpretation of Spectral Response Measurements on Two-Terminal Multijunction Solar Cells

NARCIS (Netherlands)

Si, F.T.; Isabella, O.; Zeman, M.

2016-01-01

Multijunction solar cells promise higher power-conversion efficiency than the single-junction. With respect to two-terminal devices, an accurate measurement of the spectral response requires a delicate adjustment of the light- and voltage-biasing; otherwise it can result in artifacts in the data and

Theoretical modeling of a new structure of III-V tandem solar cells by ...

African Journals Online (AJOL)

junction solar cell is theoretically investigated by optimizing the thickness of GaAs and GaInPandusing a new optical model to separate the junction between the two solar cell in order to solve problems of tunnel junction and difficulties of fabrication.

AlGaAs/InGaAlP tunnel junctions for multijunction solar cells

Energy Technology Data Exchange (ETDEWEB)

SHARPS,P.R.; LI,N.Y.; HILLS,J.S.; HOU,H.; CHANG,PING-CHIH; BACA,ALBERT G.

2000-05-16

Optimization of GaInP{sub 2}/GaAs dual and GaInP{sub 2}/GaAs/Ge triple junction cells, and development of future generation monolithic multi-junction cells will involve the development of suitable high bandgap tunnel junctions. There are three criteria that a tunnel junction must meet. First, the resistance of the junction must be kept low enough so that the series resistance of the overall device is not increased. For AMO, 1 sun operation, the tunnel junction resistance should be below 5 x 10{sup {minus}2} {Omega}-cm. Secondly, the peak current density for the tunnel junction must also be larger than the J{sub sc} of the cell so that the tunnel junction I-V curve does not have a deleterious effect on the I-V curve of the multi-junction device. Finally, the tunnel junction must be optically transparent, i.e., there must be a minimum of optical absorption of photons that will be collected by the underlying subcells. The paper reports the investigation of four high bandgap tunnel junctions grown by metal-organic chemical vapor deposition.

Theoretical investigation on heterojunction solar cell

International Nuclear Information System (INIS)

Prema, K.; Geetha, K.

1986-11-01

The study of thin film solar cells has proved that the surface is rough. A two-dimensional method based on the integral equation technique to analyse thin film solar cells has been developed by DeMey et al. In this paper we present our analysis of a thin film solar cell using the above techniques. Variation of the minority carrier concentration, the saturation current and the junction current of the solar cell with surface roughness is presented. (author). 8 refs, 4 figs

Performance of High-Efficiency Advanced Triple-Junction Solar Panels for the LILT Mission Dawn

Science.gov (United States)

Fatemi, Navid S.; Sharma, Surya; Buitrago, Oscar; Sharps, Paul R.; Blok, Ron; Kroon, Martin; Jalink, Cees; Harris, Robin; Stella, Paul; Distefano, Sal

2005-01-01

NASA's Discovery Mission Dawn is designed to (LILT) conditions. operate within the solar system's Asteroid belt, where the large distance from the sun creates a low-intensity, low-temperature (LILT) condition. To meet the mission power requirements under LlLT conditions, very high-efficiency multi-junction solar cells were selected to power the spacecraft to be built by Orbital Sciences Corporation (OSC) under contract with JPL. Emcore's InGaP/InGaAs/Ge advanced triple-junction (ATJ) solar cells, exhibiting an average air mass zero (AMO) efficiency of greater than 27.6% (one-sun, 28 C), were used to populate the solar panels [1]. The two solar array wings, to be built by Dutch Space, with 5 large- area panels each (total area of 36.4 sq. meters) are projected to produce between 10.3 kWe and 1.3 kWe of end-of life (EOL) power in the 1.0 to 3.0 AU range, respectively. The details of the solar panel design, testing and power analysis are presented.

Junction Quality of SnO2-Based Perovskite Solar Cells Investigated by Nanometer-Scale Electrical Potential Profiling.

Science.gov (United States)

Xiao, Chuanxiao; Wang, Changlei; Ke, Weijun; Gorman, Brian P; Ye, Jichun; Jiang, Chun-Sheng; Yan, Yanfa; Al-Jassim, Mowafak M

2017-11-08

Electron-selective layers (ESLs) and hole-selective layers (HSLs) are critical in high-efficiency organic-inorganic lead halide perovskite (PS) solar cells for charge-carrier transport, separation, and collection. We developed a procedure to assess the quality of the ESL/PS junction by measuring potential distribution on the cross section of SnO 2 -based PS solar cells using Kelvin probe force microscopy. Using the potential profiling, we compared three types of cells made of different ESLs but otherwise having an identical device structure: (1) cells with PS deposited directly on bare fluorine-doped SnO 2 (FTO)-coated glass; (2) cells with an intrinsic SnO 2 thin layer on the top of FTO as an effective ESL; and (3) cells with the SnO 2 ESL and adding a self-assembled monolayer (SAM) of fullerene. The results reveal two major potential drops or electric fields at the ESL/PS and PS/HSL interfaces. The electric-field ratio between the ESL/PS and PS/HSL interfaces increased in devices as follows: FTO ESL ESL cells may result from the reduction in voltage loss at the PS/HSL back interface and the improvement of V oc from the prevention of hole recombination at the ESL/PS front interface. The further improvements with adding an SAM is caused by the defect passivation at the ESL/PS interface, and hence, improvement of the junction quality. These nanoelectrical findings suggest possibilities for improving the device performance by further optimizing the SnO 2 -based ESL material quality and the ESL/PS interface.

Voltage Losses in Organic Solar Cells: Understanding the Contributions of Intramolecular Vibrations to Nonradiative Recombinations

KAUST Repository

Chen, Xiankai; Bredas, Jean-Luc

2017-01-01

The large voltage losses usually encountered in organic solar cells significantly limit the power conversion efficiencies (PCEs) of these devices, with the result that the current highest PCE values in single-junction organic photovoltaic remain

Influence of ion bombardment on microcrystalline silicon material quality and solar cell performances

OpenAIRE

Bugnon, G; Feltrin, A; Sculati-Meillaud, F; Bailat, J; Ballif, C

2008-01-01

Microcrystalline hydrogenated silicon growth with VHF-PECVD was examined in an industrial type parallel plate KAITM reactor. The influence of pressure on material quality was studied in single junction solar cells. Solar cells with their intrinsic layer prepared at higher pressures exhibit remarkable improvements, reaching 8.2% efficiency at 3.5 mbar. Further analyzes showed that μc- Si:H intrinsic layers grown at higher pressures have a significantly lower defect density. These results are a...

Simple processing of back-contacted silicon heterojunction solar cells using selective-area crystalline growth

KAUST Repository

Tomasi, Andrea; Paviet-Salomon, Bertrand; Jeangros, Quentin; Haschke, Jan; Christmann, Gabriel; Barraud, Loris; Descoeudres, Antoine; Seif, Johannes Peter; Nicolay, Sylvain; Despeisse, Matthieu; De Wolf, Stefaan; Ballif, Christophe

2017-01-01

For crystalline-silicon solar cells, voltages close to the theoretical limit are nowadays readily achievable when using passivating contacts. Conversely, maximal current generation requires the integration of the electron and hole contacts at the back of the solar cell to liberate its front from any shadowing loss. Recently, the world-record efficiency for crystalline-silicon single-junction solar cells was achieved by merging these two approaches in a single device; however, the complexity of fabricating this class of devices raises concerns about their commercial potential. Here we show a contacting method that substantially simplifies the architecture and fabrication of back-contacted silicon solar cells. We exploit the surface-dependent growth of silicon thin films, deposited by plasma processes, to eliminate the patterning of one of the doped carrier-collecting layers. Then, using only one alignment step for electrode definition, we fabricate a proof-of-concept 9-cm2 tunnel-interdigitated back-contact solar cell with a certified conversion efficiency >22.5%.

Simple processing of back-contacted silicon heterojunction solar cells using selective-area crystalline growth

KAUST Repository

Tomasi, Andrea

2017-04-24

For crystalline-silicon solar cells, voltages close to the theoretical limit are nowadays readily achievable when using passivating contacts. Conversely, maximal current generation requires the integration of the electron and hole contacts at the back of the solar cell to liberate its front from any shadowing loss. Recently, the world-record efficiency for crystalline-silicon single-junction solar cells was achieved by merging these two approaches in a single device; however, the complexity of fabricating this class of devices raises concerns about their commercial potential. Here we show a contacting method that substantially simplifies the architecture and fabrication of back-contacted silicon solar cells. We exploit the surface-dependent growth of silicon thin films, deposited by plasma processes, to eliminate the patterning of one of the doped carrier-collecting layers. Then, using only one alignment step for electrode definition, we fabricate a proof-of-concept 9-cm2 tunnel-interdigitated back-contact solar cell with a certified conversion efficiency >22.5%.

Experimental study of liquid-immersion III–V multi-junction solar cells with dimethyl silicon oil under high concentrations

International Nuclear Information System (INIS)

Xin, Ganchao; Wang, Yiping; Sun, Yong; Huang, Qunwu; Zhu, Li

2015-01-01

Highlights: • Electrical performance of MJ solar cells immersed by silicon oil was studied under 500×. • Theoretical cell photocurrent losses caused by silicon oil absorption were estimated. • Cell performance changes operated in silicon oil (1.0–30.0 mm) were analyzed. • Critical silicon oil thickness on top of MJ solar cells was estimated to be 6.3 mm. - Abstract: In order to better apply direct liquid-immersion cooling (LIC) method in temperature control of solar cells in high concentrating photovoltaic (CPV) systems, electrical characteristics of GaInP/GaInAs/Ge triple-junction solar cells immersed in dimethyl silicon oil of 1.0–30.0 mm thickness were studied experimentally under 500 suns and 25 °C. Theoretical photocurrent losses caused by spectrum transmittance decrease from spectral absorption of silicon oil were estimated for three series sub-cells, and an in-depth analysis of the electrical performances changes of the operated cell in silicon oil was performed. Compared with cell performances without liquid-immersion, the conversion efficiency and the maximum output power of the immersed solar cell in silicon oil of 1.0 mm thickness has increased from 39.567% and 19.556 W to 40.572% and 20.083 W respectively. However, the cell electrical performances decrease with increasing silicon oil thickness in the range of 1.0–30.0 mm, and the efficiency and the maximum output power of the cell have become less than those without liquid-immersion when the silicon oil thickness exceeds 6.3 mm

In Situ Irradiation and Measurement of Triple Junction Solar Cells at Low Intensity, Low Temperature (LILT) Conditions

Science.gov (United States)

Harris, R.D.; Imaizumi, M.; Walters, R.J.; Lorentzen, J.R.; Messenger, S.R.; Tischler, J.G.; Ohshima, T.; Sato, S.; Sharps, P.R.; Fatemi, N.S.

2008-01-01

The performance of triple junction InGaP/(In)GaAs/Ge space solar cells was studied following high energy electron irradiation at low temperature. Cell characterization was carried out in situ at the irradiation temperature while using low intensity illumination, and, as such, these conditions reflect those found for deep space, solar powered missions that are far from the sun. Cell characterization consisted of I-V measurements and quantum efficiency measurements. The low temperature irradiations caused substantial degradation that differs in some ways from that seen after room temperature irradiations. The short circuit current degrades more at low temperature while the open circuit voltage degrades more at room temperature. A room temperature anneal after the low temperature irradiation produced a substantial recovery in the degradation. Following irradiation at both temperatures and an extended room temperature anneal, quantum efficiency measurement suggests that the bulk of the remaining damage is in the (In)GaAs sub-cell

Thin film solar cells grown by organic vapor phase deposition

Science.gov (United States)

Yang, Fan

Organic solar cells have the potential to provide low-cost photovoltaic devices as a clean and renewable energy resource. In this thesis, we focus on understanding the energy conversion process in organic solar cells, and improving the power conversion efficiencies via controlled growth of organic nanostructures. First, we explain the unique optical and electrical properties of organic materials used for photovoltaics, and the excitonic energy conversion process in donor-acceptor heterojunction solar cells that place several limiting factors of their power conversion efficiency. Then, strategies for improving exciton diffusion and carrier collection are analyzed using dynamical Monte Carlo models for several nanostructure morphologies. Organic vapor phase deposition is used for controlling materials crystallization and film morphology. We improve the exciton diffusion efficiency while maintaining good carrier conduction in a bulk heterojunction solar cell. Further efficiency improvement is obtained in a novel nanocrystalline network structure with a thick absorbing layer, leading to the demonstration of an organic solar cell with 4.6% efficiency. In addition, solar cells using simultaneously active heterojunctions with broad spectral response are presented. We also analyze the efficiency limits of single and multiple junction organic solar cells, and discuss the challenges facing their practical implementations.

Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage

Science.gov (United States)

Limpert, Steven; Burke, Adam; Chen, I.-Ju; Anttu, Nicklas; Lehmann, Sebastian; Fahlvik, Sofia; Bremner, Stephen; Conibeer, Gavin; Thelander, Claes; Pistol, Mats-Erik; Linke, Heiner

2017-10-01

Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated ‘hot carriers’ before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we point out that this device is a hot carrier solar cell and discuss its performance in those terms. In the demonstrated devices, InP heterostructures are used as energy filters in order to thermoelectrically harvest the energy of hot electrons photogenerated in InAs absorber segments. The obtained photovoltage depends on the heterostructure design of the energy filter and is therefore tunable. By using a high-resistance, thermionic barrier, an open-circuit voltage is obtained that is in excess of the Shockley-Queisser limit. These results provide generalizable insight into how to realize high voltage hot carrier solar cells in low-bandgap materials, and therefore are a step towards the demonstration of higher efficiency hot carrier solar cells.

Modeling of Operating Temperature Performance of Triple Junction Solar Cells Using Silvaco's ATLAS

National Research Council Canada - National Science Library

Sanders, Michael H

2007-01-01

.... Building upon prior thesis work at the Naval Postgraduate School, this thesis utilizes Silvaco's ATLAS software as a tool to simulate the performance of a typical InGaP/GaAs/Ge multi-junction solar...

Organic Solar Cells beyond One Pair of Donor-Acceptor: Ternary Blends and More.

Science.gov (United States)

Yang, Liqiang; Yan, Liang; You, Wei

2013-06-06

Ternary solar cells enjoy both an increased light absorption width, and an easy fabrication process associated with their simple structures. Significant progress has been made for such solar cells with demonstrated efficiencies over 7%; however, their fundamental working principles are still under investigation. This Perspective is intended to offer our insights on the three major governing mechanisms in these intriguing ternary solar cells: charge transfer, energy transfer, and parallel-linkage. Through careful analysis of exemplary cases, we summarize the advantages and limitations of these three major mechanisms and suggest future research directions. For example, incorporating additional singlet fission or upconversion materials into the energy transfer dominant ternary solar cells has the potential to break the theoretical efficiency limit in single junction organic solar cells. Clearly, a feedback loop between fundamental understanding and materials selection is in urgent need to accelerate the efficiency improvement of these ternary solar cells.

Theoretical optimization of GaInP/GaAs dual-junction solar cell: Toward a 36% efficiency at 1000 suns

Energy Technology Data Exchange (ETDEWEB)

Baudrit, Mathieu; Algora, Carlos [Instituto de Energia Solar, Universidad Politecnica de Madrid (Spain)

2010-02-15

A theoretical conversion efficiency of 36.4% at 1000 suns concentration has been determined by means of realistic models and an improved optimization routine. The starting point device was the recent world-record monolithic GaInP/GaAs dual-junction solar cell that was grown lattice matched on a GaAs substrate by MOVPE, which has an efficiency of 32.6% at 1000 suns. Using previously calibrated models developed at our institution, IES-UPM, together with Silvaco ATLAS TCAD software, we reproduced the characteristics of the world-record solar cell, and then determined a cell configuration that would yield greater efficiency by using an optimization routine to hone the doping concentration and the thickness of each layer. (Abstract Copyright [2010], Wiley Periodicals, Inc.)

Performance of multi-junction cells due to illumination distribution across the cell surface

International Nuclear Information System (INIS)

Schultz, R.D.; Vorster, F.J; Dyk, E.E van

2012-01-01

This paper addresses the influence of illumination distribution on the performance of a high concentration photovoltaic (HCPV) module. CPV systems comprise of optical elements as well as mechanical tracking to concentrate the solar flux onto the solar receiver as well as to keep the system on track with the sun. The performance of the subcells of the multi-junction concentrator cell depends on the optical alignment of the system. Raster scanning of the incident intensity in the optical plane of the receiver and corresponding I–V measurements were used to investigate the influence of illumination distribution on performance. The results show that the illumination distribution that differs between cells does affect the performance of the module. The performance of the subcells of the multi-junction concentrator cell also depends on the optical alignment of the system.

Performance of multi-junction cells due to illumination distribution across the cell surface

Energy Technology Data Exchange (ETDEWEB)

Schultz, R.D., E-mail: s206029578@live.nmmu.ac.za [Nelson Mandela University, Physics Department, P.O. Box 77000, 6031, Port Elizabeth (South Africa); Vorster, F.J; Dyk, E.E van [Nelson Mandela University, Physics Department, P.O. Box 77000, 6031, Port Elizabeth (South Africa)

2012-05-15

This paper addresses the influence of illumination distribution on the performance of a high concentration photovoltaic (HCPV) module. CPV systems comprise of optical elements as well as mechanical tracking to concentrate the solar flux onto the solar receiver as well as to keep the system on track with the sun. The performance of the subcells of the multi-junction concentrator cell depends on the optical alignment of the system. Raster scanning of the incident intensity in the optical plane of the receiver and corresponding I-V measurements were used to investigate the influence of illumination distribution on performance. The results show that the illumination distribution that differs between cells does affect the performance of the module. The performance of the subcells of the multi-junction concentrator cell also depends on the optical alignment of the system.

Triple Junction InGaP/GaAs/Ge Solar Cell Optimization: The Design Parameters for a 36.2% Efficient Space Cell Using Silvaco ATLAS Modeling & Simulation

OpenAIRE

Tsutagawa, Michael H.; Michael, Sherif

2009-01-01

This paper presents the design parameters for a triple junction InGaP/GaAs/Ge space solar cell with a simulated maximum efficiency of 36.28% using Silvaco ATLAS Virtual Wafer Fabrication tool. Design parameters include the layer material, doping concentration, and thicknesses.

Numerical simulation model of multijunction solar cell

NARCIS (Netherlands)

Babar, M.; Al-Ammar, E.A.; Malik, N.H.

2012-01-01

Multi-junction solar cells play an important and significant role in the Concentrated Photovoltaic (CPV) Systems. Recent developments in Concentrated Photovoltaic concerning high power production and cost effective- ness along with better efficiency are due to the advancements in multi-junction

A New Six-Parameter Model Based on Chebyshev Polynomials for Solar Cells

Directory of Open Access Journals (Sweden)

Shu-xian Lun

2015-01-01

Full Text Available This paper presents a new current-voltage (I-V model for solar cells. It has been proved that series resistance of a solar cell is related to temperature. However, the existing five-parameter model ignores the temperature dependence of series resistance and then only accurately predicts the performance of monocrystalline silicon solar cells. Therefore, this paper uses Chebyshev polynomials to describe the relationship between series resistance and temperature. This makes a new parameter called temperature coefficient for series resistance introduced into the single-diode model. Then, a new six-parameter model for solar cells is established in this paper. This new model can improve the accuracy of the traditional single-diode model and reflect the temperature dependence of series resistance. To validate the accuracy of the six-parameter model in this paper, five kinds of silicon solar cells with different technology types, that is, monocrystalline silicon, polycrystalline silicon, thin film silicon, and tripe-junction amorphous silicon, are tested at different irradiance and temperature conditions. Experiment results show that the six-parameter model proposed in this paper is an I-V model with moderate computational complexity and high precision.

Laser induced non-monotonic degradation in short-circuit current of triple-junction solar cells

Science.gov (United States)

Dou, Peng-Cheng; Feng, Guo-Bin; Zhang, Jian-Min; Song, Ming-Ying; Zhang, Zhen; Li, Yun-Peng; Shi, Yu-Bin

2018-06-01

In order to study the continuous wave (CW) laser radiation effects and mechanism of GaInP/GaAs/Ge triple-junction solar cells (TJSCs), 1-on-1 mode irradiation experiments were carried out. It was found that the post-irradiation short circuit current (ISC) of the TJSCs initially decreased and then increased with increasing of irradiation laser power intensity. To explain this phenomenon, a theoretical model had been established and then verified by post-damage tests and equivalent circuit simulations. Conclusion was drawn that laser induced alterations in the surface reflection and shunt resistance were the main causes for the observed non-monotonic decrease in the ISC of the TJSCs.

Linker-dependent Junction Formation Probability in Single-Molecule Junctions

Energy Technology Data Exchange (ETDEWEB)

Yoo, Pil Sun; Kim, Taekyeong [HankukUniversity of Foreign Studies, Yongin (Korea, Republic of)

2015-01-15

We compare the junction formation probabilities of single-molecule junctions with different linker molecules by using a scanning tunneling microscope-based break-junction technique. We found that the junction formation probability varies as SH > SMe > NH2 for the benzene backbone molecule with different types of anchoring groups, through quantitative statistical analysis. These results are attributed to different bonding forces according to the linker groups formed with Au atoms in the electrodes, which is consistent with previous works. Our work allows a better understanding of the contact chemistry in the metal.molecule junction for future molecular electronic devices.

Minimum entropy principle-based solar cell operation without a pn-junction and a thin CdS layer to extract the holes from the emitter

Science.gov (United States)

Böer, Karl W.

2016-10-01

The solar cell does not use a pn-junction to separate electrons from holes, but uses an undoped CdS layer that is p-type inverted when attached to a p-type collector and collects the holes while rejecting the backflow of electrons and thereby prevents junction leakage. The operation of the solar cell is determined by the minimum entropy principle of the cell and its external circuit that determines the electrochemical potential, i.e., the Fermi-level of the base electrode to the operating (maximum power point) voltage. It leaves the Fermi level of the metal electrode of the CdS unchanged, since CdS does not participate in the photo-emf. All photoelectric actions are generated by the holes excited from the light that causes the shift of the quasi-Fermi levels in the generator and supports the diffusion current in operating conditions. It is responsible for the measured solar maximum power current. The open circuit voltage (Voc) can approach its theoretical limit of the band gap of the collector at 0 K and the cell increases the efficiency at AM1 to 21% for a thin-film CdS/CdTe that is given as an example here. However, a series resistance of the CdS forces a limitation of its thickness to preferably below 200 Å to avoid unnecessary reduction in efficiency or Voc. The operation of the CdS solar cell does not involve heated carriers. It is initiated by the field at the CdS/CdTe interface that exceeds 20 kV/cm that is sufficient to cause extraction of holes by the CdS that is inverted to become p-type. Here a strong doubly charged intrinsic donor can cause a negative differential conductivity that switches-on a high-field domain that is stabilized by the minimum entropy principle and permits an efficient transport of the holes from the CdTe to the base electrode. Experimental results of the band model of CdS/CdTe solar cells are given and show that the conduction bands are connected in the dark, where the electron current must be continuous, and the valence bands are

Wire Array Solar Cells: Fabrication and Photoelectrochemical Studies

Science.gov (United States)

Spurgeon, Joshua Michael

Despite demand for clean energy to reduce our addiction to fossil fuels, the price of these technologies relative to oil and coal has prevented their widespread implementation. Solar energy has enormous potential as a carbon-free resource but is several times the cost of coal-produced electricity, largely because photovoltaics of practical efficiency require high-quality, pure semiconductor materials. To produce current in a planar junction solar cell, an electron or hole generated deep within the material must travel all the way to the junction without recombining. Radial junction, wire array solar cells, however, have the potential to decouple the directions of light absorption and charge-carrier collection so that a semiconductor with a minority-carrier diffusion length shorter than its absorption depth (i.e., a lower quality, potentially cheaper material) can effectively produce current. The axial dimension of the wires is long enough for sufficient optical absorption while the charge-carriers are collected along the shorter radial dimension in a massively parallel array. This thesis explores the wire array solar cell design by developing potentially low-cost fabrication methods and investigating the energy-conversion properties of the arrays in photoelectrochemical cells. The concept was initially investigated with Cd(Se, Te) rod arrays; however, Si was the primary focus of wire array research because its semiconductor properties make low-quality Si an ideal candidate for improvement in a radial geometry. Fabrication routes for Si wire arrays were explored, including the vapor-liquid-solid growth of wires using SiCl4. Uniform, vertically aligned Si wires were demonstrated in a process that permits control of the wire radius, length, and spacing. A technique was developed to transfer these wire arrays into a low-cost, flexible polymer film, and grow multiple subsequent arrays using a single Si(111) substrate. Photoelectrochemical measurements on Si wire array

Quantum Junction Solar Cells

KAUST Repository

Tang, Jiang; Liu, Huan; Zhitomirsky, David; Hoogland, Sjoerd; Wang, Xihua; Furukawa, Melissa; Levina, Larissa; Sargent, Edward H.

2012-01-01

-performing colloidal quantum dot rectifying devices reported to date have relied on a junction between a quantum-tuned absorber and a bulk material (e.g., TiO 2); however, quantum tuning of the absorber then requires complete redesign of the bulk acceptor, compromising

Enhanced blue responses in nanostructured Si solar cells by shallow doping

Science.gov (United States)

Cheon, Sieun; Jeong, Doo Seok; Park, Jong-Keuk; Kim, Won Mok; Lee, Taek Sung; Lee, Heon; Kim, Inho

2018-03-01

Optimally designed Si nanostructures are very effective for light trapping in crystalline silicon (c-Si) solar cells. However, when the lateral feature size of Si nanostructures is comparable to the junction depth of the emitter, dopant diffusion in the lateral direction leads to excessive doping in the nanostructured emitter whereby poor blue responses arise in the external quantum efficiency (EQE). The primary goal of this study is to find the correlation of emitter junction depth and carrier collection efficiency in nanostructured c-Si solar cells in order to enhance the blue responses. We prepared Si nanostructures of nanocone shape by colloidal lithography, with silica beads of 520 nm in diameter, followed by a reactive ion etching process. c-Si solar cells with a standard cell architecture of an Al back surface field were fabricated varying the emitter junction depth. We varied the emitter junction depth by adjusting the doping level from heavy doping to moderate doping to light doping and achieved greatly enhanced blue responses in EQE from 47%-92% at a wavelength of 400 nm. The junction depth analysis by secondary ion mass-spectroscopy profiling and the scanning electron microscopy measurements provided us with the design guide of the doping level depending on the nanostructure feature size for high efficiency nanostructured c-Si solar cells. Optical simulations showed us that Si nanostructures can serve as an optical resonator to amplify the incident light field, which needs to be considered in the design of nanostructured c-Si solar cells.

Novel double-stage high-concentrated solar hybrid photovoltaic/thermal (PV/T) collector with nonimaging optics and GaAs solar cells reflector

International Nuclear Information System (INIS)

Abdelhamid, Mahmoud; Widyolar, Bennett K.; Jiang, Lun; Winston, Roland; Yablonovitch, Eli; Scranton, Gregg; Cygan, David; Abbasi, Hamid; Kozlov, Aleksandr

2016-01-01

Highlights: • A novel hybrid concentrating photovoltaic thermal (PV/T) collector is developed. • Thermal component achieves 60× concentration using nonimaging optics. • GaAs solar cells used as spectrally selective mirrors for low energy photons. • Thermal efficiencies of 37% at 365 °C and electrical efficiencies of 8% achieved. • Combined electric efficiency reaches 25% of DNI for system cost of $283.10/m"2". - Abstract: A novel double stage high-concentration hybrid solar photovoltaic thermal (PV/T) collector using nonimaging optics and world record thin film single-junction gallium arsenide (GaAs) solar cells has been developed. We present a detailed design and simulation of the system, experimental setup, prototype, system performance, and economic analysis. The system uses a parabolic trough (primary concentrator) to focus sunlight towards a secondary nonimaging compound parabolic concentrator (CPC) to simultaneously generate electricity from single junction GaAs solar cells, as well as high temperature dispatchable heat. This study is novel in that (a) the solar cells inside the vacuum tube act as spectrally selective mirrors for lower energy photons to maximize the system exergy, and (b) secondary concentrator allows the thermal component to reach a concentration ratio ∼60×, which is significantly higher than conventional PV/T concentration ratios. The maximum outlet temperature reached was 365 °C, and on average the thermal efficiency of the experiment was around 37%. The maximum electrical efficiency was around 8%. The total system electricity generation is around 25% of incoming DNI, by assuming the high temperature stream is used to power a steam turbine. The installed system cost per unit of parabolic trough aperture area is $283.10 per m"2.

Reliability Study in Solar Panels

OpenAIRE

Español Lifante, Albert

2012-01-01

Crystalline silicon Modules are formed by single silicon photovoltaic cells. Since each one of these cells individually contributes to the overall electric power of the panel, the failure of one of them directly affects to its benefits and performance. To Minimize these negative effects, junction boxes with few bypass diodes are usually included in Photovoltaic Solar panels. A still experimental way to built solar panels is to integrate bypass diodes in every single cell, which would in...

Generalized detailed balance theory of solar cells

Energy Technology Data Exchange (ETDEWEB)

Kirchartz, Thomas

2009-12-12

compatible with the Shockley-Queisser limit and the classical diode theory. For organic solar cells, exciton binding energies are sufficiently high, so that purely bipolar models are no longer applicable. Instead, excitonic transport has to be included. Thus, the inclusion of exciton transport into the bipolar detailed balance model leads to a generalized detailed balance model that simulates solar cells with predominantly bipolar transport, with predominantly excitonic transport and with every combination of both. Due to low exciton diffusion lengths, organic solar cells are usually combined with a specific device geometry, the bulk heterojunction. In a bulk heterojunction device, the whole bulk of the absorber is made up of distributed heterojunctions, where the exciton is transferred to a bound pair at the interface, which is then split into free electron and hole. The assumption that exciton transport is only relevant towards the next heterointerface allows to develop also a version of the detailed balance model that is applicable to bulk heterojunction cells. The last variation of the detailed balance model includes the process of impact ionisation as a means to generate more than one exciton from a single high energy photon. The model for multiple exciton generating absorbers identifies possible bottlenecks as well as maximum efficiencies of future solar cells that use this concept. Another direct consequence of the principle of detailed balance is a reciprocity theorem between electroluminescence and solar cell quantum efficiency. The theoretical part of this thesis discusses the validity range of this reciprocity and checks for each version of the model, whether the relation between electroluminescence and quantum efficiency is still applicable. The main result shows that voltage dependent carrier collection as encountered in low mobility pin-junction devices leads to deviations from the reciprocity, while it still holds for most pn-junction solar cells. The

Performance enhancement of III–V multi-junction solar cells using indium-tin-oxide electrodes

Energy Technology Data Exchange (ETDEWEB)

Kao, Yu-Cheng [Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Ou, Sin-Liang [Department of Materials Science and Engineering, Da-Yeh University, Changhua 515, Taiwan (China); Wu, Fan-Lei [Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Horng, Ray-Hua, E-mail: rhh@nctu.edu.tw [Graduate Institute of Precision Engineering, National Chung Hsing University, Taichung 402, Taiwan (China); Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)

2016-08-01

InGaP/GaAs dual-junction solar cells were prepared on p-type GaAs substrates by metalorganic chemical vapor deposition. Three types of front-side electrodes, which included AuGe/Au metal-finger, ITO-finger, and ITO-overcoated, were individually fabricated on the devices and denoted as samples A, B, and C, respectively. The thickness of ITO film is 200 nm, and its transmittance can reach 99% in the visible region. Based on the current density-voltage (J-V) measurement, the short-circuit current density (J{sub sc}) of samples A, B, and C are 8.13, 9.35, and 10.90 mA/cm{sup 2}, while the conversion efficiencies of these three samples are evaluated to be 15.45%, 18.14%, and 20.24%, respectively. This reveals that sample C possesses 31.0% enhancement in the conversion efficiency compared to that of sample A. Additionally, the series resistances (Rs) of samples A, B, and C are 21.43, 22.94, and 6.71 Ω-cm{sup 2}, respectively. The lowest Rs occurred in sample C can be attributed to the elimination of the lateral resistance between electrodes because this device was fabricated with the ITO-overcoated front-side electrode. In sample C, since the ITO front-side electrode can cover overall surface of the device, all regions on the sample surface can extract the electrons, leading to the highest J{sub sc}. - Highlights: • The InGaP/GaAs dual-junction solar cells were prepared on p-type GaAs substrates. • The device was prepared with an ITO-overcoat electrode directly on the n{sup +}-GaAs layer. • This cell has 31.0% enhancement in the η compared to that with an AuGe/Au electrode. • This device possesses the lowest R{sub s} of 6.71 Ω-cm{sup 2} owing to the elimination of R{sub L}. • ITO-overcoat electrode acts a dual role both as the TCL and an anti-reflection layer.

Imaging the Anomalous Charge Distribution Inside CsPbBr3 Perovskite Quantum Dots Sensitized Solar Cells.

Science.gov (United States)

Panigrahi, Shrabani; Jana, Santanu; Calmeiro, Tomás; Nunes, Daniela; Martins, Rodrigo; Fortunato, Elvira

2017-10-24

Highly luminescent CsPbBr 3 perovskite quantum dots (QDs) have gained huge attention in research due to their various applications in optoelectronics, including as a light absorber in photovoltaic solar cells. To improve the performances of such devices, it requires a deeper knowledge on the charge transport dynamics inside the solar cell, which are related to its power-conversion efficiency. Here, we report the successful fabrication of an all-inorganic CsPbBr 3 perovskite QD sensitized solar cell and the imaging of anomalous electrical potential distribution across the layers of the cell under different illuminations using Kelvin probe force microscopy. Carrier generation, separation, and transport capacity inside the cells are dependent on the light illumination. Large differences in surface potential between electron and hole transport layers with unbalanced carrier separation at the junction have been observed under white light (full solar spectrum) illumination. However, under monochromatic light (single wavelength of solar spectrum) illumination, poor charge transport occurred across the junction as a consequence of less difference in surface potential between the active layers. The outcome of this study provides a clear idea on the carrier dynamic processes inside the cells and corresponding surface potential across the layers under the illumination of different wavelengths of light to understand the functioning of the solar cells and ultimately for the improvement of their photovoltaic performances.

Nano imprint lithography of textures for light trapping in thin film silicon solar cells

Energy Technology Data Exchange (ETDEWEB)

Soppe, W.J.; Dorenkamper, M.S.; Notta, J.B.; Pex, P.P.A.C. [ECN-Solliance, High Tech Campus 5, 5656 AE Eindhoven (Netherlands); Schipper, W.; Wilde, R. [Nanoptics GmbH, Innungsstrasse 5, 21244 Buchholz (Germany)

2012-09-15

Nano Imprint Lithography (NIL) is a versatile and commercially viable technology for fabrication of structures for light trapping in solar cells. We demonstrate the applicability of NIL in thin film silicon solar cells in substrate configuration, where NIL is used to fabricate a textured rear contact of the solar cells. We applied random structures, based on the natural texture of SnO:F grown by APCVD, and designed 2D periodic structures and show that for single junction {mu}c-Si cells these textured rear contacts lead to an increase of Jsc of more than 40 % in comparison to cells with flat rear contacts. Cells on optimized periodic textures showed higher fill factors which can be attributed to reduced microcrack formation, leading to less shunting in comparison to cells on random textures.

Temperature coefficients for GaInP/GaAs/GaInNAsSb solar cells

Energy Technology Data Exchange (ETDEWEB)

Aho, Arto; Isoaho, Riku; Tukiainen, Antti; Polojärvi, Ville; Aho, Timo; Raappana, Marianna; Guina, Mircea [Optoelectronics Research Centre, Tampere University of Technology, P.O. Box 692, FIN-33101 Tampere (Finland)

2015-09-28

We report the temperature coefficients for MBE-grown GaInP/GaAs/GaInNAsSb multijunction solar cells and the corresponding single junction sub-cells. Temperature-dependent current-voltage measurements were carried out using a solar simulator equipped with a 1000 W Xenon lamp and a three-band AM1.5D simulator. The triple-junction cell exhibited an efficiency of 31% at AM1.5G illumination and an efficiency of 37–39% at 70x real sun concentration. The external quantum efficiency was also measured at different temperatures. The temperature coefficients up to 80°C, for the open circuit voltage, the short circuit current density, and the conversion efficiency were determined to be −7.5 mV/°C, 0.040 mA/cm{sup 2}/°C, and −0.09%/°C, respectively.

From 1 Sun to 10 Suns c-Si Cells by Optimizing Metal Grid, Metal Resistance, and Junction Depth

International Nuclear Information System (INIS)

Chaudhari, V.A.; Solanki, C.S.

2009-01-01

Use of a solar cell in concentrator PV technology requires reduction in its series resistance in order to minimize the resistive power losses. The present paper discusses a methodology of reducing the series resistance of a commercial c-Si solar cell for concentrator applications, in the range of 2 to 10 suns. Step by step optimization of commercial cell in terms of grid geometry, junction depth, and electroplating of the front metal contacts is proposed. A model of resistance network of solar cell is developed and used for the optimization. Efficiency of un optimized commercial cell at 10 suns drops by 30% of its 1 sun value corresponding to resistive power loss of about 42%. The optimized cell with grid optimization, junction optimization, electroplating, and junction optimized with electroplated contacts cell gives resistive power loss of 20%, 16%, 11%, and 8%, respectively. An efficiency gain of 3% at 10 suns for fully optimized cell is estimated

Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

Science.gov (United States)

Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

2018-05-09

III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

Efficiency limit of solar cells with index-near-zero photon management layers

Energy Technology Data Exchange (ETDEWEB)

Kirk, A.P.

2017-05-15

As single-junction solar cells saturate in efficiency, the topic of photon management has generated interest in the long running quest to exceed the Shockley-Queisser efficiency limit. While a mirror applied to the backside of a solar cell has proven its benefit as a photon management layer in record setting devices that fall within the Shockley-Queisser limit, it has been proposed that a new type of photon management layer – a transparent index-near-zero (INZ) material – applied to the top surface of a solar cell will allow it to finally exceed the Shockley-Queisser limit. INZ layers – and their influence on solar cell current density, open circuit voltage, and power conversion efficiency – are analyzed. By considering the principle of detailed balance, Snell's law, and the role that entropy plays, it is shown that INZ layers do not allow a solar cell to exceed the Shockley-Queisser efficiency limit. At best, a solar cell with an INZ layer would have the same Shockley-Queisser limiting efficiency as a conventional solar cell tracked under a direct solar spectrum (direct beam radiation only), yet would suffer diminished efficiency under a global solar spectrum (direct beam plus diffuse light) due to the presence of an external critical acceptance angle.

Efficiency limit of solar cells with index-near-zero photon management layers

International Nuclear Information System (INIS)

Kirk, A.P.

2017-01-01

As single-junction solar cells saturate in efficiency, the topic of photon management has generated interest in the long running quest to exceed the Shockley-Queisser efficiency limit. While a mirror applied to the backside of a solar cell has proven its benefit as a photon management layer in record setting devices that fall within the Shockley-Queisser limit, it has been proposed that a new type of photon management layer – a transparent index-near-zero (INZ) material – applied to the top surface of a solar cell will allow it to finally exceed the Shockley-Queisser limit. INZ layers – and their influence on solar cell current density, open circuit voltage, and power conversion efficiency – are analyzed. By considering the principle of detailed balance, Snell's law, and the role that entropy plays, it is shown that INZ layers do not allow a solar cell to exceed the Shockley-Queisser efficiency limit. At best, a solar cell with an INZ layer would have the same Shockley-Queisser limiting efficiency as a conventional solar cell tracked under a direct solar spectrum (direct beam radiation only), yet would suffer diminished efficiency under a global solar spectrum (direct beam plus diffuse light) due to the presence of an external critical acceptance angle.

Efficiency limit of solar cells with index-near-zero photon management layers

Science.gov (United States)

Kirk, A. P.

2017-05-01

As single-junction solar cells saturate in efficiency, the topic of photon management has generated interest in the long running quest to exceed the Shockley-Queisser efficiency limit. While a mirror applied to the backside of a solar cell has proven its benefit as a photon management layer in record setting devices that fall within the Shockley-Queisser limit, it has been proposed that a new type of photon management layer - a transparent index-near-zero (INZ) material - applied to the top surface of a solar cell will allow it to finally exceed the Shockley-Queisser limit. INZ layers - and their influence on solar cell current density, open circuit voltage, and power conversion efficiency - are analyzed. By considering the principle of detailed balance, Snell's law, and the role that entropy plays, it is shown that INZ layers do not allow a solar cell to exceed the Shockley-Queisser efficiency limit. At best, a solar cell with an INZ layer would have the same Shockley-Queisser limiting efficiency as a conventional solar cell tracked under a direct solar spectrum (direct beam radiation only), yet would suffer diminished efficiency under a global solar spectrum (direct beam plus diffuse light) due to the presence of an external critical acceptance angle.

Optimum Design of ARC-less InGaP/GaAs DJ Solar Cell with Hetero Tunnel Junction

Science.gov (United States)

Abbasian, Sobhan; Sabbaghi-Nadooshan, Reza

2018-03-01

The operation of hetero In0.49Ga0.51P-Al0.7Ga0.3As tunnel diodes has been evaluated, and an approach for optimizing the back surface field (BSF) layer of a InGaP/GaAs dual-junction (DJ) solar cell developed. The results show that the hetero In0.49Ga0.51P-Al0.7Ga0.3As tunnel diode transferred more electrons and holes and showed less recombination between the top and bottom cells with increased efficiency (η) in the InGaP/GaAs DJ solar cell. To achieve higher open-circuit voltage (V oc), GaAs semiconductor was investigated to match with Al0.52In0.48P with bandgap of 2.4 eV, and replacement of the bottom cell in the InGaP/GaAs DJ solar cell with such an Al0.52In0.48P-GaAs heterojunction increased the photogeneration in this region. In the next step, addition of a BSF layer to the top cell required two BSF layers in the bottom cell to optimize the short-circuit current (J sc) and η. The thickness and doping of the BSF layers were increased to obtain the highest η for the cell. The proposed structure was then compared with previous works. The proposed structure yielded V oc = 2.46 V, J sc = 30 mA/cm2, fill factor (FF) = 88.61%, and η = 65.51% under AM1.5 (1 sun) illumination.

High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics.

Science.gov (United States)

Han, Ning; Yang, Zai-xing; Wang, Fengyun; Dong, Guofa; Yip, SenPo; Liang, Xiaoguang; Hung, Tak Fu; Chen, Yunfa; Ho, Johnny C

2015-09-16

Among many available photovoltaic technologies at present, gallium arsenide (GaAs) is one of the recognized leaders for performance and reliability; however, it is still a great challenge to achieve cost-effective GaAs solar cells for smart systems such as transparent and flexible photovoltaics. In this study, highly crystalline long GaAs nanowires (NWs) with minimal crystal defects are synthesized economically by chemical vapor deposition and configured into novel Schottky photovoltaic structures by simply using asymmetric Au-Al contacts. Without any doping profiles such as p-n junction and complicated coaxial junction structures, the single NW Schottky device shows a record high apparent energy conversion efficiency of 16% under air mass 1.5 global illumination by normalizing to the projection area of the NW. The corresponding photovoltaic output can be further enhanced by connecting individual cells in series and in parallel as well as by fabricating NW array solar cells via contact printing showing an overall efficiency of 1.6%. Importantly, these Schottky cells can be easily integrated on the glass and plastic substrates for transparent and flexible photovoltaics, which explicitly demonstrate the outstanding versatility and promising perspective of these GaAs NW Schottky photovoltaics for next-generation smart solar energy harvesting devices.

Supramolecular Systems and Chemical Reactions in Single-Molecule Break Junctions.

Science.gov (United States)

Li, Xiaohui; Hu, Duan; Tan, Zhibing; Bai, Jie; Xiao, Zongyuan; Yang, Yang; Shi, Jia; Hong, Wenjing

2017-04-01

The major challenges of molecular electronics are the understanding and manipulation of the electron transport through the single-molecule junction. With the single-molecule break junction techniques, including scanning tunneling microscope break junction technique and mechanically controllable break junction technique, the charge transport through various single-molecule and supramolecular junctions has been studied during the dynamic fabrication and continuous characterization of molecular junctions. This review starts from the charge transport characterization of supramolecular junctions through a variety of noncovalent interactions, such as hydrogen bond, π-π interaction, and electrostatic force. We further review the recent progress in constructing highly conductive molecular junctions via chemical reactions, the response of molecular junctions to external stimuli, as well as the application of break junction techniques in controlling and monitoring chemical reactions in situ. We suggest that beyond the measurement of single molecular conductance, the single-molecule break junction techniques provide a promising access to study molecular assembly and chemical reactions at the single-molecule scale.

Epitaxial Ge Solar Cells Directly Grown on Si (001) by MOCVD Using Isobutylgermane

Science.gov (United States)

Kim, Youngjo; Kim, Kangho; Lee, Jaejin; Kim, Chang Zoo; Kang, Ho Kwan; Park, Won-Kyu

2018-03-01

Epitaxial Ge layers have been grown on Si (001) substrates by metalorganic chemical vapor deposition (MOCVD) using an isobutylgermane (IBuGe) metalorganic source. Low and high temperature two-step growth and post annealing techniques are employed to overcome the lattice mismatch problem between Ge and Si. It is demonstrated that high quality Ge epitaxial layers can be grown on Si (001) by using IBuGe with surface RMS roughness of 2 nm and an estimated threading dislocation density of 4.9 × 107 cm -2. Furthermore, single-junction Ge solar cells have been directly grown on Si substrates with an in situ MOCVD growth. The epitaxial Ge p- n junction structures are investigated with transmission electron microscopy and electrochemical C- V measurements. As a result, a power conversion efficiency of 1.69% was achieved for the Ge solar cell directly grown on Si substrate under AM1.5G condition.

Characterization of a Ga-assisted GaAs nanowire array solar cell on si substrate

DEFF Research Database (Denmark)

Boulanger, J. P.; Chia, A. C. E.; Wood, B.

2016-01-01

A single-junction core-shell GaAs nanowire (NW) solar cell on Si (1 1 1) substrates is presented. A Ga-assisted vapor–liquid–solid growth mechanism was used for the formation of a patterned array of radial p-i-n GaAs NWs encapsulated in AlInP passivation. Novel device fabrication utilizing facet-...

Solution-processed efficient CdTe nanocrystal/CBD-CdS hetero-junction solar cells with ZnO interlayer

International Nuclear Information System (INIS)

Tian, Yiyao; Zhang, Yijie; Lin, Yizhao; Gao, Kuo; Zhang, Yunpeng; Liu, Kaiyi; Yang, Qianqian; Zhou, Xiao; Qin, Donghuan; Wu, Hongbin; Xia, Yuxin; Hou, Lintao; Lan, Linfeng; Chen, Junwu; Wang, Dan; Yao, Rihui

2013-01-01

CdTe nanocrystal (NC)/CdS p–n hetero-junction solar cells with an ITO/ZnO-In/CdS/CdTe/MoO x /Ag-inverted structure were prepared by using a layer-by-layer solution process. The CdS thin films were prepared by chemical bath deposition on top of ITO/ZnO-In and were found to be very compact and pin-hole free in a large area, which insured high quality CdTe NCs thin-film formation upon it. The device performance was strongly related to the CdCl 2 annealing temperature and annealing time. Devices exhibited power conversion efficiency (PCE) of 3.08 % following 400 °C CdCl 2 annealing for 5 min, which was a good efficiency for solution processed CdTe/CdS NC-inverted solar cells. By carefully designing and optimizing the CdCl 2 -annealing conditions (370 °C CdCl 2 annealing for about 15 min), the PCE of such devices showed a 21 % increase, in comparison to 400 °C CdCl 2 -annealing conditions, and reached a better PCE of 3.73 % while keeping a relatively high V OC of 0.49 V. This PCE value, to the best of our knowledge, is the highest PCE reported for solution processed CdTe–CdS NC solar cells. Moreover, the inverted solar cell device was very stable when kept under ambient conditions, less than 4 % degradation was observed in PCE after 40 days storage

The generalized Shockley-Queisser limit for nanostructured solar cells

Science.gov (United States)

Xu, Yunlu; Gong, Tao; Munday, Jeremy N.

2015-09-01

The Shockley-Queisser limit describes the maximum solar energy conversion efficiency achievable for a particular material and is the standard by which new photovoltaic technologies are compared. This limit is based on the principle of detailed balance, which equates the photon flux into a device to the particle flux (photons or electrons) out of that device. Nanostructured solar cells represent a novel class of photovoltaic devices, and questions have been raised about whether or not they can exceed the Shockley-Queisser limit. Here we show that single-junction nanostructured solar cells have a theoretical maximum efficiency of ˜42% under AM 1.5 solar illumination. While this exceeds the efficiency of a non-concentrating planar device, it does not exceed the Shockley-Queisser limit for a planar device with optical concentration. We consider the effect of diffuse illumination and find that with optical concentration from the nanostructures of only × 1,000, an efficiency of 35.5% is achievable even with 25% diffuse illumination. We conclude that nanostructured solar cells offer an important route towards higher efficiency photovoltaic devices through a built-in optical concentration.

A single-gradient junction technique to replace multiple-junction shifts for craniospinal irradiation treatment

International Nuclear Information System (INIS)

Hadley, Austin; Ding, George X.

2014-01-01

Craniospinal irradiation (CSI) requires abutting fields at the cervical spine. Junction shifts are conventionally used to prevent setup error–induced overdosage/underdosage from occurring at the same location. This study compared the dosimetric differences at the cranial-spinal junction between a single-gradient junction technique and conventional multiple-junction shifts and evaluated the effect of setup errors on the dose distributions between both techniques for a treatment course and single fraction. Conventionally, 2 lateral brain fields and a posterior spine field(s) are used for CSI with weekly 1-cm junction shifts. We retrospectively replanned 4 CSI patients using a single-gradient junction between the lateral brain fields and the posterior spine field. The fields were extended to allow a minimum 3-cm field overlap. The dose gradient at the junction was achieved using dose painting and intensity-modulated radiation therapy planning. The effect of positioning setup errors on the dose distributions for both techniques was simulated by applying shifts of ± 3 and 5 mm. The resulting cervical spine doses across the field junction for both techniques were calculated and compared. Dose profiles were obtained for both a single fraction and entire treatment course to include the effects of the conventional weekly junction shifts. Compared with the conventional technique, the gradient-dose technique resulted in higher dose uniformity and conformity to the target volumes, lower organ at risk (OAR) mean and maximum doses, and diminished hot spots from systematic positioning errors over the course of treatment. Single-fraction hot and cold spots were improved for the gradient-dose technique. The single-gradient junction technique provides improved conformity, dose uniformity, diminished hot spots, lower OAR mean and maximum dose, and one plan for the entire treatment course, which reduces the potential human error associated with conventional 4-shifted plans

InP tunnel junction for InGaAs/InP tandem solar cells

Science.gov (United States)

Vilela, M. F.; Freundlich, A.; Bensaoula, A.; Medelci, N.; Renaud, P.

1995-01-01

Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450-530 C). We have previously shown that CBE is perfectly suited toward the fabrication of complex photovoltaic devices such as InP/InGaAs monolithically integrated tandem solar cells, because its low process temperature preserves the electrical characteristics of the InGaAs tunnel junction commonly used as an ohmic interconnect. In this work using CBE for the fabrication of optically transparent (with respect to the bottom cell) InP tunnel diodes is demonstrated. Epitaxial growth were performed in a Riber CBE 32 system using PH3 and TMIn as III and V precursors. Solid Be (p-type) and Si (n-type) have been used as doping sources, allowing doping levels up to 2 x 10(exp -19)/cu cm and 1 x 10(exp -19)/cu cm for n and p type respectively. The InP tunnel junction characteristics and the influence of the growth's conditions (temperature, growth rate) over its performance have been carefully investigated. InP p(++)/n(++) tunnel junction with peak current densities up to 1600 A/sq cm and maximum specific resistivities (V(sub p)/I(sub p) - peak voltage to peak current ratio) in the range of 10(exp -4) Omega-sq cm were obtained. The obtained peak current densities exceed the highest results previously reported for their lattice matched counterparts, In(0.53)Ga( 0.47)As and should allow the realization of improved minimal absorption losses in the interconnect InP/InGaAs tandem devices for Space applications. Owing to the low process temperature required for the top cell, these devices exhibit almost no degradation of its characteristics after the growth of subsequent thick InP layer suggesting

Berkeley Lab Sheds Light on Improving Solar Cell Efficiency

International Nuclear Information System (INIS)

Lawrence Berkeley National Laboratory

2007-01-01

Typical manufacturing methods produce solar cells with an efficiency of 12-15%; and 14% efficiency is the bare minimum for achieving a profit. In work performed at the Ernest Orlando Lawrence Berkeley National Laboratory (Berkeley, CA, 5 10-486-577 1)--a US Department of Energy national laboratory that conducts unclassified scientific research and is managed by the University of California--scientist Scott McHugo has obtained keen insights into the impaired performance of solar cells manufactured from polycrystalline silicon. The solar cell market is potentially vast, according to Berkeley Lab. Lightweight solar panels are highly beneficial for providing electrical power to remote locations in developing nations, since there is no need to build transmission lines or truck-in generator fuel. Moreover, industrial nations confronted with diminishing resources have active programs aimed at producing improved, less expensive solar cells. 'In a solar cell, there is a junction between p-type silicon and an n-type layer, such as diffused-in phosphorous', explained McHugo, who is now with Berkeley Lab's Accelerator and Fusion Research Division. 'When sunlight is absorbed, it frees electrons, which start migrating in a random-walk fashion toward that junction. If the electrons make it to the junction; they contribute to the cell's output of electric current. Often, however, before they reach the junction, they recombine at specific sites in the crystal' (and, therefore, cannot contribute to current output). McHugo scrutinized a map of a silicon wafer in which sites of high recombination appeared as dark regions. Previously, researchers had shown that such phenomena occurred not primarily at grain boundaries in the polycrystalline material, as might be expected, but more often at dislocations in the crystal. However, the dislocations themselves were not the problem. Using a unique heat treatment technique, McHugo performed electrical measurements to investigate the material

Charge Transfer from Carbon Nanotubes to Silicon in Flexible Carbon Nanotube/Silicon Solar Cells.

Science.gov (United States)

Li, Xiaokai; Mariano, Marina; McMillon-Brown, Lyndsey; Huang, Jing-Shun; Sfeir, Matthew Y; Reed, Mark A; Jung, Yeonwoong; Taylor, André D

2017-12-01

Mechanical fragility and insufficient light absorption are two major challenges for thin flexible crystalline Si-based solar cells. Flexible hybrid single-walled carbon nanotube (SWNT)/Si solar cells are demonstrated by applying scalable room-temperature processes for the fabrication of solar-cell components (e.g., preparation of SWNT thin films and SWNT/Si p-n junctions). The flexible SWNT/Si solar cells present an intrinsic efficiency ≈7.5% without any additional light-trapping structures. By using these solar cells as model systems, the charge transport mechanisms at the SWNT/Si interface are investigated using femtosecond transient absorption. Although primary photon absorption occurs in Si, transient absorption measurements show that SWNTs also generate and inject excited charge carriers to Si. Such effects can be tuned by controlling the thickness of the SWNTs. Findings from this study could open a new pathway for designing and improving the efficiency of photocarrier generation and absorption for high-performance ultrathin hybrid SWNT/Si solar cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

All-carbon nanotube diode and solar cell statistically formed from macroscopic network

Institute of Scientific and Technical Information of China (English)

Albert G. Nasibulin[1,2,3; Adinath M. Funde[3,4; Ilya V. Anoshkin[3; Igor A. Levitskyt[5,6

2015-01-01

Schottky diodes and solar cells are statistically created in the contact area between two macroscopic films of single-walled carbon nanotubes （SWNTs） at the junction of semiconducting and quasi-metallic bundles consisting of several high quality tubes. The n-doping of one of the films allows for photovoltaic action, owing to an increase in the built-in potential at the bundle-to-bundle interface. Statistical analysis demonstrates that the Schottky barrier device contributes significantly to the I-V characteristics, compared to the p-n diode. The upper limit of photovoltaic conversion efficiency has been estimated at N20%, demonstrating that the light energy conversion is very efficient for such a unique solar cell. While there have been multiple studies on rectifying SWNT diodes in the nanoscale environment, this is the first report of a macroscopic all-carbon nanotube diode and solar cell.

High efficiency double sided solar cells

International Nuclear Information System (INIS)

Seddik, M.M.

1990-06-01

Silicon technology state of the art for single crystalline was given to be limited to less than 20% efficiency. A proposed new form of photovoltaic solar cell of high current high efficiency with double sided structures has been given. The new forms could be n ++ pn ++ or p ++ np ++ double side junctions. The idea of double sided devices could be understood as two solar cells connected back-to-back in parallel electrical connection, in which the current is doubled if the cell is illuminated from both sides by a V-shaped reflector. The cell is mounted to the reflector such that each face is inclined at an angle of 45 deg. C to each side of the reflector. The advantages of the new structure are: a) High power devices. b) Easy to fabricate. c) The cells are used vertically instead of horizontal use of regular solar cell which require large area to install. This is very important in power stations and especially for satellite installation. If the proposal is made real and proved to be experimentally feasible, it would be a new era for photovoltaic solar cells since the proposal has already been extended to even higher currents. The suggested structures could be stated as: n ++ pn ++ Vp ++ np ++ ;n ++ pn ++ Vn ++ pn ++ ORp ++ np ++ Vp ++ np ++ . These types of structures are formed in wedged shape to employ indirect illumination by either parabolic; conic or V-shaped reflectors. The advantages of these new forms are low cost; high power; less in size and space; self concentrating; ... etc. These proposals if it happens to find their ways to be achieved experimentally, I think they will offer a short path to commercial market and would have an incredible impact on solar cell technology and applications. (author). 12 refs, 5 figs

Enhanced Efficiency of GaAs Single-Junction Solar Cells with Inverted-Cone-Shaped Nanoholes Fabricated Using Anodic Aluminum Oxide Masks

Directory of Open Access Journals (Sweden)

Kangho Kim

2013-01-01

Full Text Available The GaAs solar cells are grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD and fabricated by photolithography, metal evaporation, annealing, and wet chemical etch processes. Anodized aluminum oxide (AAO masks are prepared from an aluminum foil by a two-step anodization method. Inductively coupled plasma dry etching is used to etch and define the nanoarray structures on top of an InGaP window layer of the GaAs solar cells. The inverted-cone-shaped nanoholes with a surface diameter of about 50 nm are formed on the top surface of the solar cells after the AAO mask removal. Photovoltaic and optical characteristics of the GaAs solar cells with and without the nanohole arrays are investigated. The reflectance of the AAO nanopatterned samples is lower than that of the planar GaAs solar cell in the measured range. The short-circuit current density increased up to 11.63% and the conversion efficiency improved from 10.53 to 11.57% under 1-sun AM 1.5 G conditions by using the nanohole arrays. Dependence of the efficiency enhancement on the etching depth of the nanohole arrays is also investigated. These results show that the nanohole arrays fabricated with an AAO technique may be employed to improve the light absorption and, in turn, the conversion efficiency of the GaAs solar cell.

Optimized efficiency in InP nanowire solar cells with accurate 1D analysis

Science.gov (United States)

Chen, Yang; Kivisaari, Pyry; Pistol, Mats-Erik; Anttu, Nicklas

2018-01-01

Semiconductor nanowire arrays are a promising candidate for next generation solar cells due to enhanced absorption and reduced material consumption. However, to optimize their performance, time consuming three-dimensional (3D) opto-electronics modeling is usually performed. Here, we develop an accurate one-dimensional (1D) modeling method for the analysis. The 1D modeling is about 400 times faster than 3D modeling and allows direct application of concepts from planar pn-junctions on the analysis of nanowire solar cells. We show that the superposition principle can break down in InP nanowires due to strong surface recombination in the depletion region, giving rise to an IV-behavior similar to that with low shunt resistance. Importantly, we find that the open-circuit voltage of nanowire solar cells is typically limited by contact leakage. Therefore, to increase the efficiency, we have investigated the effect of high-bandgap GaP carrier-selective contact segments at the top and bottom of the InP nanowire and we find that GaP contact segments improve the solar cell efficiency. Next, we discuss the merit of p-i-n and p-n junction concepts in nanowire solar cells. With GaP carrier selective top and bottom contact segments in the InP nanowire array, we find that a p-n junction design is superior to a p-i-n junction design. We predict a best efficiency of 25% for a surface recombination velocity of 4500 cm s-1, corresponding to a non-radiative lifetime of 1 ns in p-n junction cells. The developed 1D model can be used for general modeling of axial p-n and p-i-n junctions in semiconductor nanowires. This includes also LED applications and we expect faster progress in device modeling using our method.

Increasing conversion efficiency of two-step photon up-conversion solar cell with a voltage booster hetero-interface.

Science.gov (United States)

Asahi, Shigeo; Kusaki, Kazuki; Harada, Yukihiro; Kita, Takashi

2018-01-17

Development of high-efficiency solar cells is one of the attractive challenges in renewable energy technologies. Photon up-conversion can reduce the transmission loss and is one of the promising concepts which improve conversion efficiency. Here we present an analysis of the conversion efficiency, which can be increased by up-conversion in a single-junction solar cell with a hetero-interface that boosts the output voltage. We confirm that an increase in the quasi-Fermi gap and substantial photocurrent generation result in a high conversion efficiency.

GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint

Energy Technology Data Exchange (ETDEWEB)

Warren, Emily L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Jain, Nikhil [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Tamboli, Adele C [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Vaisman, Michelle [Yale University; Li, Qiang [Hong Kong University of Science and Technology; Lau, Kei May [Hong Kong University of Science and Technology

2017-08-31

Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, low-cost tandem photovoltaics. Here, we present a single junction GaAs solar cell grown monolithically on polished Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers. The GaAs is free of antiphase domains and maintains a relatively low TDD of 4x107 cm-2, despite the lack of a graded buffer. This 6.25 percent-efficient demonstration solar cell shows promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.

Solution-processed efficient CdTe nanocrystal/CBD-CdS hetero-junction solar cells with ZnO interlayer

Energy Technology Data Exchange (ETDEWEB)

Tian, Yiyao; Zhang, Yijie; Lin, Yizhao; Gao, Kuo; Zhang, Yunpeng; Liu, Kaiyi; Yang, Qianqian [South China University of Technology, School of Materials Science and Engineering (China); Zhou, Xiao; Qin, Donghuan, E-mail: qindh@scut.edu.cn; Wu, Hongbin [South China University of Technology, Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices (China); Xia, Yuxin; Hou, Lintao [Jinan University, College of Science and Engineering (China); Lan, Linfeng; Chen, Junwu; Wang, Dan; Yao, Rihui [South China University of Technology, Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices (China)

2013-11-15

CdTe nanocrystal (NC)/CdS p–n hetero-junction solar cells with an ITO/ZnO-In/CdS/CdTe/MoO{sub x}/Ag-inverted structure were prepared by using a layer-by-layer solution process. The CdS thin films were prepared by chemical bath deposition on top of ITO/ZnO-In and were found to be very compact and pin-hole free in a large area, which insured high quality CdTe NCs thin-film formation upon it. The device performance was strongly related to the CdCl{sub 2} annealing temperature and annealing time. Devices exhibited power conversion efficiency (PCE) of 3.08 % following 400 °C CdCl{sub 2} annealing for 5 min, which was a good efficiency for solution processed CdTe/CdS NC-inverted solar cells. By carefully designing and optimizing the CdCl{sub 2}-annealing conditions (370 °C CdCl{sub 2} annealing for about 15 min), the PCE of such devices showed a 21 % increase, in comparison to 400 °C CdCl{sub 2}-annealing conditions, and reached a better PCE of 3.73 % while keeping a relatively high V{sub OC} of 0.49 V. This PCE value, to the best of our knowledge, is the highest PCE reported for solution processed CdTe–CdS NC solar cells. Moreover, the inverted solar cell device was very stable when kept under ambient conditions, less than 4 % degradation was observed in PCE after 40 days storage.

Effects of Different Solvents on the Planar Hetero-junction Perovskite Solar Cells

Directory of Open Access Journals (Sweden)

Lin Shunquan

2015-01-01

Full Text Available The perovskite (CH3NH3PbI3 films on the planar hetero-junction perovskite solar cells (PHJ-PSCs are fabricated by “two-steps” process with the wet spin-coating method. The precursor (PbI2 solutions are compounded with 4 types of solvents: N-Methyl Pyrrolidone (NMP, γ-butyrolactone (GBL, Dimethyl Sulfoxide (DMSO and N, N-dimethylformamide (DMF. All the solutions have the same concentration. The influences of different precursor solvents to the micro-structures of CH3NH3PbI3 films and device performance are studied. Atomic force microscopy (AFM and scanning electron microscope (SEM are used to characterize the CH3NH3PbI3 films. The results indicate that the CH3NH3PbI3 film using DMF solvent possesses more rough morphology and thickest thickness. The monolithic PHJ-PSCs devices based on DMF solvent are tested under a standard one sun of simulated solar irradiation (AM1.5. The results show that the open-circuit voltage (Voc reaches 872mV, the short-circuit current (Jsc reaches 9.35mA/cm2, the filling factor(FF is 0.62 and the photo-current conversion efficiency (PCE is 5.05%. DMF is the best one among these 4 types of solvents for PHJ-PSCs.

Multilayer Antireflection Coating for Triple Junction Solar Cells

International Nuclear Information System (INIS)

Zhan Feng; Wang Hai-Li; He Ji-Fang; Wang Juan; Huang She-Song; Ni Hi-Qiao; Niu Zhi-Chuan

2011-01-01

According to the theory of optical films, we simulate the reflectivity of antireflection coatings (ARCs) for solar cells of Ga 0.5 In 0.5 P/GaAs/Ge based on an optical transfer matrix. In order to provide sufficient consideration of the refractive index dispersion effect of multilayer ARCs, we use multi-dimensional matrix data for reliable simulation. After the reflection curves are obtained, the effective average reflectance R e is introduced to optimize the film system by minimizing R e . Optimization of single layer (Al 2 O 3 ), double layer (MgF 2 /ZnS) and triple layer (MgF 2 /Al 2 O 3 /ZnS) ARCs is realized by using this method for space and terrestrial applications. Effects of these ARCs are compared after optimization. These theoretical parameters can be used to guide experiments. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Multiple growths of epitaxial lift-off solar cells from a single InP substrate

International Nuclear Information System (INIS)

Lee, Kyusang; Shiu, Kuen-Ting; Zimmerman, Jeramy D.; Forrest, Stephen R.; Renshaw, Christopher K.

2010-01-01

We demonstrate multiple growths of flexible, thin-film indium tin oxide-InP Schottky-barrier solar cells on a single InP wafer via epitaxial lift-off (ELO). Layers that protect the InP parent wafer surface during the ELO process are subsequently removed by selective wet-chemical etching, with the active solar cell layers transferred to a thin, flexible plastic host substrate by cold welding at room temperature. The first- and second-growth solar cells exhibit no performance degradation under simulated Atmospheric Mass 1.5 Global (AM 1.5G) illumination, and have a power conversion efficiency of η p =14.4±0.4% and η p =14.8±0.2%, respectively. The current-voltage characteristics for the solar cells and atomic force microscope images of the substrate indicate that the parent wafer is undamaged, and is suitable for reuse after ELO and the protection-layer removal processes. X-ray photoelectron spectroscopy, reflection high-energy electron diffraction observation, and three-dimensional surface profiling show a surface that is comparable or improved to the original epiready wafer following ELO. Wafer reuse over multiple cycles suggests that high-efficiency; single-crystal thin-film solar cells may provide a practical path to low-cost solar-to-electrical energy conversion.

PbSe Nanocrystal Excitonic Solar Cells

KAUST Repository

Choi, Joshua J.; Lim, Yee-Fun; Santiago-Berrios, Mitk’ El B.; Oh, Matthew; Hyun, Byung-Ryool; Sun, Liangfeng; Bartnik, Adam C.; Goedhart, Augusta; Malliaras, George G.; Abruña, Héctor D.; Wise, Frank W.; Hanrath, Tobias

2009-01-01

that Is distinct from previously reported Schottky devices and consistent with signatures of excitonic solar cells. Remarkably, despite the limitation of planar junction structure, and without film thickness optimization, the best performing device shows a 1-sun

Accurate reconstruction of the jV-characteristic of organic solar cells from measurements of the external quantum efficiency

Science.gov (United States)

Meyer, Toni; Körner, Christian; Vandewal, Koen; Leo, Karl

2018-04-01

In two terminal tandem solar cells, the current density - voltage (jV) characteristic of the individual subcells is typically not directly measurable, but often required for a rigorous device characterization. In this work, we reconstruct the jV-characteristic of organic solar cells from measurements of the external quantum efficiency under applied bias voltages and illumination. We show that it is necessary to perform a bias irradiance variation at each voltage and subsequently conduct a mathematical correction of the differential to the absolute external quantum efficiency to obtain an accurate jV-characteristic. Furthermore, we show that measuring the external quantum efficiency as a function of voltage for a single bias irradiance of 0.36 AM1.5g equivalent sun provides a good approximation of the photocurrent density over voltage curve. The method is tested on a selection of efficient, common single-junctions. The obtained conclusions can easily be transferred to multi-junction devices with serially connected subcells.

Effect of p-Layer and i-Layer Properties on the Electrical Behaviour of Advanced a-Si:H/a-SiGe:H Thin Film Solar Cell from Numerical Modeling Prospect

Directory of Open Access Journals (Sweden)

Peyman Jelodarian

2012-01-01

Full Text Available The effect of p-layer and i-layer characteristics such as thickness and doping concentration on the electrical behaviors of the a-Si:H/a-SiGe:H thin film heterostructure solar cells such as electric field, photogeneration rate, and recombination rate through the cell is investigated. Introducing Ge atoms to the Si lattice in Si-based solar cells is an effective approach in improving their characteristics. In particular, current density of the cell can be enhanced without deteriorating its open-circuit voltage. Optimization shows that for an appropriate Ge concentration, the efficiency of a-Si:H/a-SiGe solar cell is improved by about 6% compared with the traditional a-Si:H solar cell. This work presents a novel numerical evaluation and optimization of amorphous silicon double-junction (a-Si:H/a-SiGe:H thin film solar cells and focuses on optimization of a-SiGe:H midgap single-junction solar cell based on the optimization of the doping concentration of the p-layer, thicknesses of the p-layer and i-layer, and Ge content in the film. Maximum efficiency of 23.5%, with short-circuit current density of 267 A/m2 and open-circuit voltage of 1.13 V for double-junction solar cell has been achieved.

Multi-crystalline II-VI based multijunction solar cells and modules

Science.gov (United States)

Hardin, Brian E.; Connor, Stephen T.; Groves, James R.; Peters, Craig H.

2015-06-30

Multi-crystalline group II-VI solar cells and methods for fabrication of same are disclosed herein. A multi-crystalline group II-VI solar cell includes a first photovoltaic sub-cell comprising silicon, a tunnel junction, and a multi-crystalline second photovoltaic sub-cell. A plurality of the multi-crystalline group II-VI solar cells can be interconnected to form low cost, high throughput flat panel, low light concentration, and/or medium light concentration photovoltaic modules or devices.

Substrate and p-layer effects on polymorphous silicon solar cells

Directory of Open Access Journals (Sweden)

Abolmasov S.N.

2014-07-01

Full Text Available The influence of textured transparent conducting oxide (TCO substrate and p-layer on the performance of single-junction hydrogenated polymorphous silicon (pm-Si:H solar cells has been addressed. Comparative studies were performed using p-i-n devices with identical i/n-layers and back reflectors fabricated on textured Asahi U-type fluorine-doped SnO2, low-pressure chemical vapor deposited (LPCVD boron-doped ZnO and sputtered/etched aluminum-doped ZnO substrates. The p-layers were hydrogenated amorphous silicon carbon and microcrystalline silicon oxide. As expected, the type of TCO and p-layer both have a great influence on the initial conversion efficiency of the solar cells. However they have no effect on the defect density of the pm-Si:H absorber layer.

Organic solar cells fundamentals, devices, and upscaling

CERN Document Server

Rand, Barry P

2014-01-01

Solution-Processed DonorsB. Burkhart, B. C. ThompsonSmall-Molecule and Vapor-Deposited Organic Photovoltaics R. R. Lunt, R. J. HolmesAcceptor Materials for Solution-Processed Solar Cells Y. HeInterfacial Layers R. Po, C. Carbonera, A. BernardiElectrodes in Organic Photovoltaic Cells S. Yoo, J.-Y. Lee, H. Kim, J. LeeTandem and Multi-Junction Organic Solar Cells J. Gilot, R. A. J. JanssenBulk Heterojunction Morphology Control and Characterization T. Wang, D. G. LidzeyOptical Modeling and Light Management

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells.

Science.gov (United States)

Di, Dawei; Perez-Wurfl, Ivan; Gentle, Angus; Kim, Dong-Ho; Hao, Xiaojing; Shi, Lei; Conibeer, Gavin; Green, Martin A

2010-08-01

As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide (SiO(2)) matrix, single-junction silicon quantum dot (Si QD) solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid (H(3)PO(4)) etching, nitrogen (N(2)) gas anneal and forming gas (Ar: H(2)) anneal on the cells' electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark I-V, light I-V and circular transfer length measurement (CTLM) suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement.

Low cost solar array project cell and module formation research area: Process research of non-CZ silicon material

Science.gov (United States)

1981-01-01

Liquid diffusion masks and liquid applied dopants to replace the CVD Silox masking and gaseous diffusion operations specified for forming junctions in the Westinghouse baseline process sequence for producing solar cells from dendritic web silicon were investigated. The baseline diffusion masking and drive processes were compared with those involving direct liquid applications to the dendritic web silicon strips. Attempts were made to control the number of variables by subjecting dendritic web strips cut from a single web crystal to both types of operations. Data generated reinforced earlier conclusions that efficiency levels at least as high as those achieved with the baseline back junction formation process can be achieved using liquid diffusion masks and liquid dopants. The deliveries of dendritic web sheet material and solar cells specified by the current contract were made as scheduled.

Electroluminescence analysis of injection-enhanced annealing of electron irradiation-induced defects in GaInP top cells for triple-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Yi, Tiancheng; Lu, Ming; Yang, Kui; Xiao, Pengfei; Wang, Rong, E-mail: wangr@bnu.edu.cn

2014-09-15

Direct injection-enhanced annealing of defects in a GaInP top cell for GaInP/GaAs/Ge triple-junction solar cells irradiated with 1.8 MeV electrons with a fluence of 1 × 10{sup 15} cm{sup −2} has been observed and analyzed using electroluminescence (EL) spectra. Minority-carrier injection under forward bias conditions is observed to enhance defect annealing in the GaInP top cell, and recovery of the EL intensity of the GaInP top cell was observed even at room temperature. Moreover, the injection-enhanced defect annealing rates obey a simple Arrhenius law; therefore, the annealing activation energy was determined and is equal to 0.51 eV. Lastly, the H2 defect has been identified as the primary non-radiative recombination center based on a comparison of the annealing activation energies.

Pathway to 50% Efficient Inverted Metamorphic Concentrator Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Geisz, John F [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Steiner, Myles A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Jain, Nikhil [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Schulte, Kevin L [National Renewable Energy Laboratory (NREL), Golden, CO (United States); France, Ryan M [National Renewable Energy Laboratory (NREL), Golden, CO (United States); McMahon, William E [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Perl, Emmett [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Horowitz, Kelsey A [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Friedman, Daniel J [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

2017-09-06

Series-connected five (5J) and six junction (6J) concentrator solar cell strategies have the realistic potential to exceed 50% efficiency to enable low-cost CPV systems. We propose three strategies for developing a practical 6J device. We have overcome many of the challenges required to build such concentrator solar cell devices: We have developed 2.1 eV AlGaInP, 1.7 eV AlGaAs, and 1.7 eV GaInAsP junctions with external radiative efficiency greater than 0.1%. We have developed a transparent tunnel junction that absorbs minimal light intended for the second junction yet resists degradation under thermal load. We have developed metamorphic grades from the GaAs to the InP lattice constant that are transparent to sub-GaAs bandgap light. We have grown and compared low bandgap junctions (0.7eV - 1.2 eV) using metamorphic GaInAs, metamorphic GaInAsP, and GaInAsP lattice-matched to InP. And finally, we have demonstrated excellent performance in a high voltage, low current 4 junction inverted metamorphic device using 2.1, 1.7, 1.4, and 1.1 eV junctions with over 8.7 mA/cm2 one-sun current density that operates up to 1000 suns without tunnel junction failure.

p–n junction improvements of Cu{sub 2}ZnSnS{sub 4}/CdS monograin layer solar cells

Energy Technology Data Exchange (ETDEWEB)

Kauk-Kuusik, M., E-mail: marit.kauk-kuusik@ttu.ee [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Timmo, K.; Danilson, M.; Altosaar, M.; Grossberg, M. [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Ernits, K. [crystalsol OÜ, Akadeemia tee 15a, 12618 Tallinn (Estonia)

2015-12-01

Highlights: • S, Sn–O and/or Sn–Br species are formed on the CZTS crystal's after Br-etching. • KCN etching remained oxides and bromides on the surface until CdS deposition. • The Br-etched devices exhibit a “crossover” between the dark and the light I–V curve. - Abstract: In this work we studied the influence of oxidative etching of CZTS monograin surface to the performance of CZTS monograin layer solar cells. The chemistry of CZTS monograin powder surfaces submitted to bromine in methanol and KCN aqueous solutions was investigated by X-ray photoelectron spectroscopy. After bromine etching, elemental sulfur, Sn–O and/or Sn–Br species are formed on the CZTS crystal surface. Sulfur is completely removed by subsequent KCN etching, but oxides and bromides remained on the surface until CdS deposition. These species dissolve in alkaline solution and influence properties of CdS. The conversion efficiency of solar cells improved after the chemical etching prior to CdS deposition and the effect can be attributed to the change of the absorber material crystals surface composition and properties suitable for the effective p–n junction formation. The best CZTS monograin layer solar cell showed conversation efficiency of 7.04% (active area 9.38%).

Parameter study for polymer solar modules based on various cell lengths and light intensities

Energy Technology Data Exchange (ETDEWEB)

Slooff, L.H.; Burgers, A.R.; Bende, E.E.; Kroon, J.M. [ECN Solar Energy, P.O. Box 1, 1755 ZG Petten (Netherlands); Veenstra, S.C. [ECN Solar Energy, Solliance, High Tech Campus 5, P63, 5656AE Eindhoven (Netherlands)

2013-10-15

Polymer solar cells may be applied in portable electronic devices, where light intensity and spectral distribution of the illuminating source can be very different compared to outdoor applications. As the power output of solar cells depends on temperature, light intensity and spectrum, the design of the module must be optimized for the specific illumination conditions in the different applications. The interconnection area between cells in a module must be as narrow as possible to maximize the active area, also called geometrical fill factor, of the module. Laser scribing has the potential to realize this. The optimal width of the interconnection zone depends both on technological limitations, e.g. laser scribe width and the minimal distance between scribes, and electrical limitations like resistive losses. The latter depends on the generated current in the cell and thus also on illumination intensity. Besides that, also the type of junction, i.e. a single or tandem junction, will influence the optimal geometry. In this paper a calculation model is presented that can be used for electrical modeling of polymer cells and modules in order to optimize the performance for the specific illumination conditions.

Bifacial aspects of industrial n-Pasha solar cells

Science.gov (United States)

Van Aken, Bas B.; Tool, Kees; Kossen, Eric J.; Carr, Anna J.; Janssen, Gaby J. M.; Newman, Bonna K.; Romijn, Ingrid G.

2017-08-01

Bifacial photovoltaic (PV) modules make optimal use of diffuse and ground-reflected light. The gain in energy yield depends on both the local climatic conditions and the PV system layout. These determine the additional irradiance on the rear of the PV panels. The rear response of the (laminated) solar cell(s) determines how much additional energy this rear irradiance generates. Based on our experiments and simulations, the main parameters that determine the bifaciality factor of solar cells with a front side junction are the rear metal coverage, the base resistivity and the diffusion profile on the rear. These will be evaluated and discussed in this paper. Front-junction solar cells with low base resistivity have a lower short circuit current when illuminated from the rear due to enhanced recombination in the BSF. Stencil printed rear metallization yields a higher bifaciality factor compared to screen printed by reducing the metal coverage and consumption and maintaining the front side efficiency. For our optimized 239 cm2 bifacial cell we estimate that the output with 20% contributed by the rear side is equivalent to that of a 24.4% efficient monofacial cell.

Device physics underlying silicon heterojunction and passivating-contact solar cells: A topical review

KAUST Repository

Chavali, Raghu V. K.; De Wolf, Stefaan; Alam, Muhammad A.

2018-01-01

The device physics of commercially dominant diffused-junction silicon solar cells is well understood, allowing sophisticated optimization of this class of devices. Recently, so-called passivating-contact solar cell technologies have become prominent

Electron-beam induced current characterization of back-surface field solar cells using a chopped scanning electron microscope beam

Science.gov (United States)

Luke, K. L.; Cheng, L.-J.

1984-01-01

A chopped electron beam induced current (EBIC) technique for the chacterization of back-surface field (BSF) solar cells is presented. It is shown that the effective recombination velocity of the low-high junction forming the back-surface field of BSF cells, in addition to the diffusion length and the surface recombination velocity of the surface perpendicular to both the p-n and low-high junctions, can be determined from the data provided by a single EBIC scan. The method for doing so is described and illustrated. Certain experimental considerations taken to enhance the quality of the EBIC data are also discussed.

Polycrystalline silicon thin-film solar cells on glass

Energy Technology Data Exchange (ETDEWEB)

Gall, S.; Becker, C.; Conrad, E.; Dogan, P.; Fenske, F.; Gorka, B.; Lee, K.Y.; Rau, B.; Ruske, F.; Rech, B. [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH (formerly Hahn-Meitner-Institut Berlin GmbH), Department Silicon Photovoltaics (SE1), Kekulestr. 5, D-12489 Berlin (Germany)

2009-06-15

Poly-Si thin-film solar cells on glass feature the potential to reach single-junction efficiencies of 15% or even higher at low costs. In this paper innovative approaches are discussed, which could lead to substantial efficiency improvements and significant cost reductions: (i) preparation of large-grained poly-Si films using the 'seed layer concept' targeting at high material quality, (ii) utilization of ZnO:Al-coated glass enabling simple contacting and light-trapping schemes, (iii) utilization of high-rate electron-beam evaporation for the absorber deposition offering a high potential for cost reduction. (author)

Effects of pillar height and junction depth on the performance of radially doped silicon pillar arrays for solar energy applications

NARCIS (Netherlands)

Elbersen, R.; Vijselaar, Wouter Jan, Cornelis; Tiggelaar, Roald M.; Gardeniers, Johannes G.E.; Huskens, Jurriaan

2016-01-01

The effects of pillar height and junction depth on solar cell characteristics are investigated to provide design rules for arrays of such pillars in solar energy applications. Radially doped silicon pillar arrays are fabricated by deep reactive ion etching of silicon substrates followed by the

Solar energy: photovoltaics

International Nuclear Information System (INIS)

Goetzberger, A.; Voss, B.; Knobloch, J.

1994-01-01

This textbooks covers the following topics: foundations of photovoltaics, solar energy, P-N junctions, physics of solar cells, high-efficiency solar cells, technology of Si solar cells, other solar cells, photovoltaic applications. (orig.)

On-Orbit Demonstration of a Lithium-Ion Capacitor and Thin-Film Multijunction Solar Cells

Science.gov (United States)

Kukita, Akio; Takahashi, Masato; Shimazaki, Kazunori; Kobayashi, Yuki; Sakai, Tomohiko; Toyota, Hiroyuki; Takahashi, Yu; Murashima, Mio; Uno, Masatoshi; Imaizumi, Mitsuru

2014-08-01

This paper describes an on-orbit demonstration of the Next-generation Small Satellite Instrument for Electric power systems (NESSIE) on which an aluminum- laminated lithium-ion capacitor (LIC) and a lightweight solar panel called KKM-PNL, which has space solar sheets using thin-film multijunction solar cells, were installed. The flight data examined in this paper covers a period of 143 days from launch. We verified the integrity of an LIC constructed using a simple and lightweight mounting method: no significant capacitance reduction was observed. We also confirmed that inverted metamorphic multijunction triple-junction thin-film solar cells used for evaluation were healthy at 143 days after launch, because their degradation almost matched the degradation predictions for dual-junction thin-film solar cells.

Silicon solar cells made by ion implantation and glow discharge

International Nuclear Information System (INIS)

Ponpon, J.P.; Siffert, P.

1975-01-01

Three different methods of silicon solar cell preparation are considered and investigated: low energy implantation, glow discharge and prebombarded Schottky barriers. The properties of the contact layers realized by these processes are compared in terms of junction depth and sheet resistance. Preliminary results show the usefulness of these techniques for terrestrial solar cell realization [fr

Solar cell structure incorporating a novel single crystal silicon material

Science.gov (United States)

Pankove, Jacques I.; Wu, Chung P.

1983-01-01

A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

Investigation on Single-Molecule Junctions Based on Current–Voltage Characteristics

Directory of Open Access Journals (Sweden)

Yuji Isshiki

2018-02-01

Full Text Available The relationship between the current through an electronic device and the voltage across its terminals is a current–voltage characteristic (I–V that determine basic device performance. Currently, I–V measurement on a single-molecule scale can be performed using break junction technique, where a single molecule junction can be prepared by trapping a single molecule into a nanogap between metal electrodes. The single-molecule I–Vs provide not only the device performance, but also reflect information on energy dispersion of the electronic state and the electron-molecular vibration coupling in the junction. This mini review focuses on recent representative studies on I–Vs of the single molecule junctions that cover investigation on the single-molecule diode property, the molecular vibration, and the electronic structure as a form of transmission probability, and electronic density of states, including the spin state of the single-molecule junctions. In addition, thermoelectronic measurements based on I–Vs and identification of the charged carriers (i.e., electrons or holes are presented. The analysis in the single-molecule I–Vs provides fundamental and essential information for a better understanding of the single-molecule science, and puts the single molecule junction to more practical use in molecular devices.

4-CM2 CuInGaSe2 based solar cells

International Nuclear Information System (INIS)

Devaney, W.E.; Stewart, J.M.; Chen, W.S.

1990-01-01

This paper reports that polycrystalline thin-film solar cells with the structure ZnO/CdZnS/CuInGaSe 2 have been fabricated with larger single cell areas than have been previously reported. A cell of area 4-cm 2 has been made with an Am1.5, 100 mW/cm 2 total area conversion efficiency of (11.1% 912.0% active area) and AMO conversion efficiency of 10.0% (10.9% active area). The CuInGaSe 2 layer had a gallium to indium ratio of 0.26:0.74 with a band gap of approximately 1.15 eV. The cells use an isolated tab design for the negative (grid) contact, demonstrating the ability to pattern the semiconductor layers. Such CuInGaSe 2 based cells may be suitable both for large area terrestrial applications and for single-junction space cell applications

The CdS/Cu2S solar cell. 2

International Nuclear Information System (INIS)

Boeer, K.W.

1981-01-01

The present state of the art in theory and experimental knowledge of the operation of CdS/Cu 2 S solar cells is reviewed. The subject is covered under the following headings: (1) voltage drop across the cell, (2) Boltzmann solution near the open circuit voltage, (3) boundary condition at the junction-emitter interface, (4) current-voltage characteristics, (5) multiple donors (traps) in the junction, (6) space charge and field limitation caused by field quenching, (7) tunneling under reverse bias, (8) current-dependent interface electron density and interface recombination, (9) kinetics of the characteristics, (10) relevant experimental results, (11) deduction of junction parameters from j-U characteristics, and (12) junction-emitter interface. 37 references are included

A review on solar cells from Si-single crystals to porous materials and quantum dots.

Science.gov (United States)

Badawy, Waheed A

2015-03-01

Solar energy conversion to electricity through photovoltaics or to useful fuel through photoelectrochemical cells was still a main task for research groups and developments sectors. In this article we are reviewing the development of the different generations of solar cells. The fabrication of solar cells has passed through a large number of improvement steps considering the technological and economic aspects. The first generation solar cells were based on Si wafers, mainly single crystals. Permanent researches on cost reduction and improved solar cell efficiency have led to the marketing of solar modules having 12-16% solar conversion efficiency. Application of polycrystalline Si and other forms of Si have reduced the cost but on the expense of the solar conversion efficiency. The second generation solar cells were based on thin film technology. Thin films of amorphous Si, CIS (copper-indium-selenide) and t-Si were employed. Solar conversion efficiencies of about 12% have been achieved with a remarkable cost reduction. The third generation solar cells are based on nano-crystals and nano-porous materials. An advanced photovoltaic cell, originally developed for satellites with solar conversion efficiency of 37.3%, based on concentration of the solar spectrum up to 400 suns was developed. It is based on extremely thin concentration cells. New sensitizer or semiconductor systems are necessary to broaden the photo-response in solar spectrum. Hybrids of solar and conventional devices may provide an interim benefit in seeking economically valuable devices. New quantum dot solar cells based on CdSe-TiO2 architecture have been developed.

A review on solar cells from Si-single crystals to porous materials and quantum dots

Directory of Open Access Journals (Sweden)

Waheed A. Badawy

2015-03-01

Full Text Available Solar energy conversion to electricity through photovoltaics or to useful fuel through photoelectrochemical cells was still a main task for research groups and developments sectors. In this article we are reviewing the development of the different generations of solar cells. The fabrication of solar cells has passed through a large number of improvement steps considering the technological and economic aspects. The first generation solar cells were based on Si wafers, mainly single crystals. Permanent researches on cost reduction and improved solar cell efficiency have led to the marketing of solar modules having 12–16% solar conversion efficiency. Application of polycrystalline Si and other forms of Si have reduced the cost but on the expense of the solar conversion efficiency. The second generation solar cells were based on thin film technology. Thin films of amorphous Si, CIS (copper–indium–selenide and t-Si were employed. Solar conversion efficiencies of about 12% have been achieved with a remarkable cost reduction. The third generation solar cells are based on nano-crystals and nano-porous materials. An advanced photovoltaic cell, originally developed for satellites with solar conversion efficiency of 37.3%, based on concentration of the solar spectrum up to 400 suns was developed. It is based on extremely thin concentration cells. New sensitizer or semiconductor systems are necessary to broaden the photo-response in solar spectrum. Hybrids of solar and conventional devices may provide an interim benefit in seeking economically valuable devices. New quantum dot solar cells based on CdSe–TiO2 architecture have been developed.

Electromagnetic waves in single- and multi-Josephson junctions

International Nuclear Information System (INIS)

Matsumoto, Hideki; Koyama, Tomio; Machida, Masahiko

2008-01-01

The terahertz wave emission from the intrinsic Josephson junctions is one of recent topics in high T c superconductors. We investigate, by numerical simulation, properties of the electromagnetic waves excited by a constant bias current in the single- and multi-Josephson junctions. Nonlinear equations of phase-differences are solved numerically by treating the effects of the outside electromagnetic fields as dynamical boundary conditions. It is shown that the emitted power of the electromagnetic wave can become large near certain retrapping points of the I-V characteristics. An instability of the inside phase oscillation is related to large amplitude of the oscillatory waves. In the single- (or homogeneous mutli-) Josephson junctions, electromagnetic oscillations can occur either in a form of standing waves (shorter junctions) or by formation of vortex-antivortex pairs (longer junctions). How these two effects affects the behavior of electromagnetic waves in the intrinsic Josephson junctions is discussed

Low-Cost High-Efficiency Solar Cells with Wafer Bonding and Plasmonic Technologies

Science.gov (United States)

Tanake, Katsuaki

InP/Si substrates for bulk InP in the fabrication of such a four-junction solar cell could significantly reduce the substrate cost since the current prices for commercial InP substrates are much higher than those for Si substrates by two orders of magnitude. Direct heteroepitaxial growth of InP thin films on Si substrates has not produced the low dislocation-density high quality layers required for active InGaAs/InP in optoelectronic devices due to the ˜8% lattice mismatch between InP and Si. We successfully fabricated InP/Si substrates by He implantation of InP prior to bonding to a thermally oxidized Si substrate and annealing to exfoliate an InP thin film. The thickness of the exfoliated InP films was only 900 nm, which means hundreds of the InP/Si substrates could be prepared from a single InP wafer in principle. The photovoltaic current-voltage characteristics of the In0.53Ga0.47As cells fabricated on the wafer-bonded InP/Si substrates were comparable to those synthesized on commercially available epi-ready InP substrates, and had a ˜20% higher short-circuit current which we attribute to the high reflectivity of the InP/SiO2/Si bonding interface. This work provides an initial demonstration of wafer-bonded InP/Si substrates as an alternative to bulk InP substrates for solar cell applications. We have observed photocurrent enhancements up to 260% at 900 nm for a GaAs cell with a dense array of Ag nanoparticles with 150 nm diameter and 20 nm height deposited through porous alumina membranes by thermal evaporation on top of the cell, relative to reference GaAs cells with no metal nanoparticle array. This dramatic photocurrent enhancement is attributed to the effect of metal nanoparticles to scatter the incident light into photovoltaic layers with a wide range of angles to increase the optical path length in the absorber layer. GaAs solar cells with metallic structures at the bottom of the photovoltaic active layers, not only at the top, using semiconductor

Predicted solar cell edge radiation effects

International Nuclear Information System (INIS)

Gates, M.T.

1993-01-01

The Advanced Solar Cell Orbital Test (ASCOT) will test six types of solar cells in a high energy proton environment. During the design of the experiment a question was raised about the effects of proton radiation incident on the edge of the solar cells and whether edge radiation shielding was required. Historical geosynchronous data indicated that edge radiation damage is not detectable over the normal end of life solar cell degradation; however because the ASCOT radiation environment has a much higher and more energetic fluence of protons, considerably more edge damage is expected. A computer analysis of the problem was made by modeling the expected radiation damage at the cell edge and using a network model of small interconnected solar cells to predict degradation in the cell's electrical output. The model indicated that the deepest penetration of edge radiation was at the top of the cell near the junction where the protons have access to the cell through the low density cell/cover adhesive layer. The network model indicated that the cells could tolerate high fluences at their edge as long as there was high electrical resistance between the edge radiated region and the contact system on top of the cell. The predicted edge radiation related loss was less than 2% of maximum power for GaAs/Ge solar cells. As a result, no edge radiation protection was used for ASCOT

Fabrication and Photovoltaic Characteristics of Coaxial Silicon Nanowire Solar Cells Prepared by Wet Chemical Etching

Directory of Open Access Journals (Sweden)

Chien-Wei Liu

2012-01-01

Full Text Available Nanostructured solar cells with coaxial p-n junction structures have strong potential to enhance the performances of the silicon-based solar cells. This study demonstrates a radial junction silicon nanowire (RJSNW solar cell that was fabricated simply and at low cost using wet chemical etching. Experimental results reveal that the reflectance of the silicon nanowires (SNWs declines as their length increases. The excellent light trapping was mainly associated with high aspect ratio of the SNW arrays. A conversion efficiency of ∼7.1% and an external quantum efficiency of ∼64.6% at 700 nm were demonstrated. Control of etching time and diffusion conditions holds great promise for the development of future RJSNW solar cells. Improving the electrode/RJSNW contact will promote the collection of carries in coaxial core-shell SNW array solar cells.

Hybrid emitter all back contact solar cell

Science.gov (United States)

Loscutoff, Paul; Rim, Seung

2016-04-12

An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.

Microscopic optoelectronic defectoscopy of solar cells

Directory of Open Access Journals (Sweden)

Dallaeva D.

2013-05-01

Full Text Available Scanning probe microscopes are powerful tool for micro- or nanoscale diagnostics of defects in crystalline silicon solar cells. Solar cell is a large p-n junction semiconductor device. Its quality is strongly damaged by the presence of defects. If the cell works under low reverse-biased voltage, defects emit a light in visible range. The suggested method combines three different measurements: electric noise measurement, local topography and near-field optical beam induced current and thus provides more complex information. To prove its feasibility, we have selected one defect (truncated pyramid in the sample, which emitted light under low reverse-biased voltage.

Development of Space Qualified Microlens Arrays for Solar Cells Used on Satellite Power Systems

Directory of Open Access Journals (Sweden)

Ömer Faruk Keser

2017-08-01

Full Text Available The power system, one of the main systems of satellite, provides energy required for the satellite. Solar cells are also the most used energy source in the power system. The third generation multi-junction solar cells are known as the ones with highest performance. One of the methods to increase the performance of the solar cells is anti-reflective surface coatings with the Micro Lens Array-MLA. It's expected that satellite technologies has high power efficiency and low mass. The space environment has many effects like atomic oxygen, radiation and thermal cycles. Researches for increasing the solar cells performance shows that MLA coated solar cell has increased light absorption performance and less cell heating with very low additional mass. However, it is established that few studies on MLA coatings of solar cells are not applicable on space platforms. In this study, the process of development of MLA which is convenient to space power systems is investigated in a methodological way. In this context, a method which is developed based on MLA coatings of multi-junction solar cells for satellite power systems is presented.

A numerical model of p-n junctions bordering on surfaces

Energy Technology Data Exchange (ETDEWEB)

Altermatt, P.P.; Aberle, A.G.; Jianhua Zhao; Aihua Wang; Heiser, G. [University of New South Wales, Sydney (Australia). Centre for Photovolatic Engineering

2002-10-01

Many solar cell structures contain regions where the emitter p-n junction borders on the surface. If the surface is not well passivated, a large amount of recombination occurs in such regions. This type of recombination is influenced by the electrostatics of both the p-n junction and the surface, and hence it is different from the commonly described recombination phenomena occurring in the p-n junction within the bulk. We developed a two-dimensional model for the recombination mechanisms occurring in emitter p-n junctions bordering on surfaces. The model is validated by reproducing the experimental I-V curves of specially designed silicon solar cells. It is shown under which circumstances a poor surface passivation, near where the p-n junction borders on the surface, reduces the fill factor and the open-circuit voltage. The model can be applied to many other types of solar cells. (author)

Structural dependences of localization and recombination of photogenerated carriers in the top GaInP Subcells of GaInP/GaAs double-junction tandem solar cells.

Science.gov (United States)

Deng, Zhuo; Ning, Jiqiang; Su, Zhicheng; Xu, Shijie; Xing, Zheng; Wang, Rongxin; Lu, Shulong; Dong, Jianrong; Zhang, Baoshun; Yang, Hui

2015-01-14

In high-efficiency GaInP/GaAs double-junction tandem solar cells, GaInP layers play a central role in determining the performance of the solar cells. Therefore, gaining a deeper understanding of the optoelectronic processes in GaInP layers is crucial for improving the energy conversion efficiency of GaInP-based photovoltaic devices. In this work, we firmly show strong dependences of localization and recombination of photogenerated carriers in the top GaInP subcells in the GaInP/GaAs double-junction tandem solar cells on the substrate misorientation angle with excitation intensity- and temperature-dependent photoluminescence (PL). The entire solar cell structures including GaInP layers were grown with metalorganic chemical vapor deposition on GaAs substrates with misorientation angles of 2° (denoted as Sample 2°) and 7° (Sample 7°) off (100) toward (111)B. The PL spectral features of the two top GaInP subcells, as well as their excitation-power and temperature dependences exhibit remarkable variation on the misorientation angle. In Sample 2°, the dominant localization mechanism and luminescence channels are due to the energy potential minima caused by highly ordered atomic domains; In Sample 7°, the main localization and radiative recombination of photogenerated carriers occur in the atomically disordered regions. Our results reveal a more precise picture on the localization and recombination mechanisms of photogenerated carriers in the top GaInP subcells, which could be the crucial factors in controlling the optoelectronic efficiency of the GaInP-based multijunction photovoltaic devices.

The role of Rap1 in cell-cell junction formation

NARCIS (Netherlands)

Kooistra, M.R.H.

2008-01-01

Both epithelial and endothelial cells form cell-cell junctions at the cell-cell contacts to maintain tissue integrity. Proper regulation of cell-cell junctions is required for the organisation of the tissue and to prevent leakage of blood vessels. In endothelial cells, the cell-cell junctions are

Tunable photovoltaic effect and solar cell performance of self-doped perovskite SrTiO3

Directory of Open Access Journals (Sweden)

K. X. Jin

2012-12-01

Full Text Available We report on the tunable photovoltaic effect of self-doped single-crystal SrTiO3 (STO, a prototypical perovskite-structured complex oxide, and evaluate its performance in Schottky junction solar cells. The photovaltaic characteristics of vacuum-reduced STO single crystals are dictated by a thin surface layer with electrons donated by oxygen vacancies. Under UV illumination, a photovoltage of 1.1 V is observed in the as-received STO single crystal, while the sample reduced at 750 °C presents the highest incident photon to carrier conversion efficiency. Furthermore, in the STO/Pt Schottky junction, a power conversion efficiency of 0.88% was achieved under standard AM 1.5 illumination at room temperature. This work establishes STO as a high-mobility photovoltaic semiconductor with potential of integration in self-powered oxide electronics.

Influence of interface preparation on minority carrier lifetime for low bandgap tandem solar cell materials

Energy Technology Data Exchange (ETDEWEB)

Szabo, Nadine; Sagol, B. Erol; Seidel, Ulf; Schwarzburg, Klaus; Hannappel, Thomas [Helmholtz-Zentrum Berlin fuer Materialien und Energie GmbH, Berlin (Germany)

2010-07-01

III-V semiconductor compounds grown by MOVPE are implemented in todays state-of-the-art third generation multi-junction solar cells. The current record multi junction solar cell grown on germanium, having Ge, Ga(In)As and GaInP as subcells, reached a record efficiency of 41.6%. The efficiency of these multi junction solar cells could be significantly increased, if its low bandgap Ge subcell would be replaced by a more efficient tandem. For this purpose the low bandgap materials InGaAs and InGaAsP are suitable. The bandgap composition of these materials allows a better yield of the solar spectrum. Based on InGaAs/InGaAsP absorber materials we have developed a low bandgap tandem solar cell with optimized bandgaps. Results of time resolved photoluminescence (TRPL) for the IR-bandgap compounds InGaAsP (1.03 eV)/InGaAs (0.73 eV) are presented. The lifetime of minority carriers is one of the most important properties of solar cell absorber materials. We show on the example of the low band gap tandem cell how the choice of the materials, the quality of the bulk, the optimization of the band gap energies and the preparation of the critical interfaces are essential to build a high efficiency solar cell. The quality of the bulk and the preparation of the critical interfaces are essential for the growth of the double heterostructure (DHS).

The nature of single-ion activity coefficients calculated from potentiometric measurements on cells with liquid junctions

Energy Technology Data Exchange (ETDEWEB)

Zarubin, Dmitri P., E-mail: dmitri.zarubin@mtu-net.ru [Department of Physical and Collod Chemistry, Moscow State University of Technology and Management, 73 Zemlyanoi Val, Moscow 109803 (Russian Federation)

2011-08-15

Highlights: > Problem of ionic activity coefficients, determined by potentiometry, is reconsidered. > They are found to be functions of mean activity coefficients and transport numbers of ions. > The finding is verified by calculations and comparing the results with reported data. > Calculations are performed for systems with single electrolytes and binary mixtures. - Abstract: Potentiometric measurements on cells with liquid junctions are sometimes used for calculations of single-ion activity coefficients in electrolyte solutions, the incidence of this being increased recently. As surmised by Guggenheim in the 1930s, such coefficients (of ions i), {gamma}{sub i}, are actually complicated functions of mean ionic activity coefficients, {gamma}{sub {+-}}, and transport numbers of ions, t{sub i}. In the present paper specific functions {gamma}{sub i}({gamma}{sub {+-}}, t{sub i}) are derived for a number of cell types with an arbitrary mixture of strong electrolytes in a one-component solvent in the liquid-junction system. The cell types include cells with (i) identical electrodes, (ii) dissimilar electrodes reversible to the same ions, (iii) dissimilar electrodes reversible to ions of opposite charge signs, (iv) dissimilar electrodes reversible to different ions of the same charge sign, and (v) identical reference electrodes and an ion-selective membrane permeable to ions of only one type. Pairs of functions for oppositely charged ions are found to be consistent with the mean ionic activity coefficients as would be expected for pairs of the proper {gamma}{sub i} quantities by definition of {gamma}{sub {+-}}. The functions are tested numerically on some of the reported {gamma}{sub i} datasets that are the more tractable. A generally good agreement is found with data reported for cells with single electrolytes HCl and KCl in solutions, and with binary mixtures in the liquid-junction systems of KCl from the reference solutions and NaCl and HCl from the test solutions. It

Characterization of solar cells

Energy Technology Data Exchange (ETDEWEB)

Haerkoenen, J.; Tuominen, E.; Nybergh, K.; Ezer, Y.; Yli-Koski, M.; Sinkkonen, J. [Helsinki Univ. of Technology (Finland). Dept. of Electrical and Communications Engineering

1998-12-31

Photovoltaic research began at the Electron Physics Laboratory of the Helsinki University of Tehnology in 1993, when the laboratory joined the national NEMO 2 research program. During the early stages of the photovoltaic research the main objective was to establish necessary measurement and characterisation routines, as well as to develop the fabrication process. The fabrication process development work has been supported by characterisation and theoretical modelling of the solar cells. Theoretical investigations have been concerned with systematic studies of solar cell parameters, such as diffusion lengths, surface recombination velocities and junction depths. The main result of the modelling and characterisation work is a method which is based on a Laplace transform of the so-called spatial collection efficiency function of the cell. The basic objective of the research has been to develop a fabrication process cheap enough to be suitable for commercial production

Theoretical modeling and optimization of III-V GaInP/GaAs/Ge monolithic triple-junction solar cells

International Nuclear Information System (INIS)

Leem, Jung Woo; Yu, Jae Su; Kim, Jong Nam; Noh, Sam Kyu

2014-01-01

We design and optimize monolithic III-V GaInP/GaAs/Ge triple-junction (TJ) solar cells by using a commercial software Silvaco ATLAS simulator to obtain the maximum short-circuit current density J sc . The maximum J sc , which is a current matching value between the GaInP top and GaAs middle subcells, can be determined by varying the base thicknesses of the GaInP top and GaAs middle subcells. From the numerical simulation results, a matched maximum J sc value of 13.92 mA/cm 2 is obtained at base thicknesses of 0.57 μm and 3 μm for the GaInP top and GaAs middle subcells, respectively, under 1-sun air mass 1.5 global spectrum illumination, leading to a high power conversion efficiency of 30.72%. The open-circuit voltage and the fill factor are 2.55 V and 86.55%, respectively. For the optimized cell structure, the external quantum efficiency and the photogeneration rate distributions are also investigated. To obtain efficient antireflection coatings (ARCs), we perform optical reflectance calculations by using a rigorous coupled-wave analysis method. For this, a silicon oxide/titanium oxide double-layer is used as an ARC on the TJ solar cell.

Theoretical modeling and optimization of III-V GaInP/GaAs/Ge monolithic triple-junction solar cells

Energy Technology Data Exchange (ETDEWEB)

Leem, Jung Woo; Yu, Jae Su [Kyung Hee University, Yongin (Korea, Republic of); Kim, Jong Nam [Pukyung National University, Pusan (Korea, Republic of); Noh, Sam Kyu [Korea Research Institute of Standards and Science, Daejon (Korea, Republic of)

2014-05-15

We design and optimize monolithic III-V GaInP/GaAs/Ge triple-junction (TJ) solar cells by using a commercial software Silvaco ATLAS simulator to obtain the maximum short-circuit current density J{sub sc}. The maximum J{sub sc}, which is a current matching value between the GaInP top and GaAs middle subcells, can be determined by varying the base thicknesses of the GaInP top and GaAs middle subcells. From the numerical simulation results, a matched maximum J{sub sc} value of 13.92 mA/cm{sup 2} is obtained at base thicknesses of 0.57 μm and 3 μm for the GaInP top and GaAs middle subcells, respectively, under 1-sun air mass 1.5 global spectrum illumination, leading to a high power conversion efficiency of 30.72%. The open-circuit voltage and the fill factor are 2.55 V and 86.55%, respectively. For the optimized cell structure, the external quantum efficiency and the photogeneration rate distributions are also investigated. To obtain efficient antireflection coatings (ARCs), we perform optical reflectance calculations by using a rigorous coupled-wave analysis method. For this, a silicon oxide/titanium oxide double-layer is used as an ARC on the TJ solar cell.

Boron profiles in doped amorphous-silicon solar cells formed by plasma ion deposition

International Nuclear Information System (INIS)

Stoddart, C.T.H.; Hunt, C.P.; Coleman, J.H.

1979-01-01

Amorphous silicon p-n junction solar cells of large area (100 cm 2 ) and having a quantum efficiency approaching 100% in the blue region have been prepared by plasma ion-plating, the p layer being formed from diborane and silane gases in a cathode glow-discharge. Surface secondary ion mass spectrometry combined with ion beam etching was found to be a very sensitive method with high in-depth resolution for obtaining the initial boron-silicon profile of the solar cell p-n junction. (author)

Single-electron tunnel junction array

International Nuclear Information System (INIS)

Likharev, K.K.; Bakhvalov, N.S.; Kazacha, G.S.; Serdyukova, S.I.

1989-01-01

The authors have carried out an analysis of statics and dynamics of uniform one-dimensional arrays of ultrasmall tunnel junctions. The correlated single-electron tunneling in the junctions of the array results in its behavior qualitatively similar to that of the Josephson transmission line. In particular, external electric fields applied to the array edges can inject single-electron-charged solitons into the array interior. Shape of such soliton and character of its interactions with other solitons and the array edges are very similar to those of the Josephson vortices (sine-Gordon solitons) in the Josephson transmission line. Under certain conditions, a coherent motion of the soliton train along the array is possible, resulting in generation of narrowband SET oscillations with frequency f/sub s/ = /e where is the dc current flowing along the array

Impact of porous SiC-doped PVA based LDS layer on electrical parameters of Si solar cells

Science.gov (United States)

Kaci, S.; Rahmoune, R.; Kezzoula, F.; Boudiaf, Y.; Keffous, A.; Manseri, A.; Menari, H.; Cheraga, H.; Guerbous, L.; Belkacem, Y.; Chalal, R.; Bozetine, I.; Boukezzata, A.; Talbi, L.; Benfadel, K.; Ouadfel, M.-A.; Ouadah, Y.

2018-06-01

Nowadays, the advanced photon management is regarded as an area of intensive research investment. Ever since the most widely used commercial photovoltaic cells are fabricated with single gap semiconductors like silicon, photon management has offered opportunities to make better use of the photons, both inside and outside the single junction window. In this study, the impact of new down shifting layer on the photoelectrical parameters of silicon based solar cell was studied. An effort to enhance the photovoltaic performance of textured silicon solar cells through the application of porous SiC particles-doped polyvinyl alcohol (PVA) layers using the spin-coating technique, is reported. Current-voltage curves under artificial illumination were used to confirm the contribution of LDS (SiC-PVA) thin layers. Experiment results revealed that LDS based on SiC particles which were etched in HF/K2S2O8 solution at T = 80 °C under UV light of 254 nm exhibited the best solar cell photoelectrical parameters due to its strong photoluminescence.

Fabrication of 20.19% Efficient Single-Crystalline Silicon Solar Cell with Inverted Pyramid Microstructure.

Science.gov (United States)

Zhang, Chunyang; Chen, Lingzhi; Zhu, Yingjie; Guan, Zisheng

2018-04-03

This paper reports inverted pyramid microstructure-based single-crystalline silicon (sc-Si) solar cell with a conversion efficiency up to 20.19% in standard size of 156.75 × 156.75 mm 2 . The inverted pyramid microstructures were fabricated jointly by metal-assisted chemical etching process (MACE) with ultra-low concentration of silver ions and optimized alkaline anisotropic texturing process. And the inverted pyramid sizes were controlled by changing the parameters in both MACE and alkaline anisotropic texturing. Regarding passivation efficiency, the textured sc-Si with normal reflectivity of 9.2% and inverted pyramid size of 1 μm was used to fabricate solar cells. The best batch of solar cells showed a 0.19% higher of conversion efficiency and a 0.22 mA cm -2 improvement in short-circuit current density, and the excellent photoelectric property surpasses that of the same structure solar cell reported before. This technology shows great potential to be an alternative for large-scale production of high efficient sc-Si solar cells in the future.

Optimization of material/device parameters of CdTe photovoltaic for solar cells applications

Science.gov (United States)

Wijewarnasuriya, Priyalal S.

2016-05-01

Cadmium telluride (CdTe) has been recognized as a promising photovoltaic material for thin-film solar cell applications due to its near optimum bandgap of ~1.5 eV and high absorption coefficient. The energy gap is near optimum for a single-junction solar cell. The high absorption coefficient allows films as thin as 2.5 μm to absorb more than 98% of the above-bandgap radiation. Cells with efficiencies near 20% have been produced with poly-CdTe materials. This paper examines n/p heterostructure device architecture. The performance limitations related to doping concentrations, minority carrier lifetimes, absorber layer thickness, and surface recombination velocities at the back and front interfaces is assessed. Ultimately, the paper explores device architectures of poly- CdTe and crystalline CdTe to achieve performance comparable to gallium arsenide (GaAs).

Fabrication of double- and triple-junction solar cells with hydrogenated amorphous silicon oxide (a-SiOx:H) top cell

Czech Academy of Sciences Publication Activity Database

Kim, D.Y.; Guijt, E.; Si, F.T.; Santbergen, R.; Holovský, Jakub; Isabella, O.; van Swaaij, R.A.C.M.M.; Zeman, M.

2015-01-01

Roč. 141, Oct (2015), s. 148-153 ISSN 0927-0248 R&D Projects: GA MŠk 7E12029 EU Projects: European Commission(XE) 283501 - Fast Track Institutional support: RVO:68378271 Keywords : multi-junction solar cel * a-SiOx:H * high voc * current matching Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 4.732, year: 2015

Solution-processed parallel tandem polymer solar cells using silver nanowires as intermediate electrode.

Science.gov (United States)

Guo, Fei; Kubis, Peter; Li, Ning; Przybilla, Thomas; Matt, Gebhard; Stubhan, Tobias; Ameri, Tayebeh; Butz, Benjamin; Spiecker, Erdmann; Forberich, Karen; Brabec, Christoph J

2014-12-23

Tandem architecture is the most relevant concept to overcome the efficiency limit of single-junction photovoltaic solar cells. Series-connected tandem polymer solar cells (PSCs) have advanced rapidly during the past decade. In contrast, the development of parallel-connected tandem cells is lagging far behind due to the big challenge in establishing an efficient interlayer with high transparency and high in-plane conductivity. Here, we report all-solution fabrication of parallel tandem PSCs using silver nanowires as intermediate charge collecting electrode. Through a rational interface design, a robust interlayer is established, enabling the efficient extraction and transport of electrons from subcells. The resulting parallel tandem cells exhibit high fill factors of ∼60% and enhanced current densities which are identical to the sum of the current densities of the subcells. These results suggest that solution-processed parallel tandem configuration provides an alternative avenue toward high performance photovoltaic devices.

Applications of transient annealing to solar cell processing

Energy Technology Data Exchange (ETDEWEB)

Bentini, G.G. (C.N.R. Istituto LAMEL, Bologna (Italy))

1983-01-01

The economical reasons supporting the introduction of transient annealing in solar cell manufacturing are briefly discussed. Such techniques may play an important role, as they are compatible with the request of high throughput, automated processing together with the high quality of the p-n junction which are necessary for large scale economical production of photovoltaic energy. A survey of the applications of the different transient annealing techniques to solar cell processing has been developed by comparing in detail the results obtained up to now the case of solid and liquid phase transient annealing, associated with dry techniques such as Ion Implantation or dopant deposition on the wafer surface. The possibility of using laser pulses for the formation of the p-n junction by incorporation of dopant atoms from a suitable gaseous environment, has also been examined.

Experimental analysis and modeling of the IV characteristics of photovoltaic solar cells under solar spectrum spot illumination

Energy Technology Data Exchange (ETDEWEB)

Munji, M.K., E-mail: mathew.munji@nmmu.ac.z [Department of Physics, Nelson Mandela Metropolitan University, PO Box 7700 Port Elizabeth 6031 (South Africa); Dyk, E.E. van; Vorster, F.J. [Department of Physics, Nelson Mandela Metropolitan University, PO Box 7700 Port Elizabeth 6031 (South Africa)

2009-12-01

In this paper, some models that have been put forward to explain the characteristics of a photovoltaic solar cell device under solar spot-illumination are investigated. In the experimental procedure, small areas of the cell were selected and illuminated at different solar intensities. The solar cell open circuit voltage (V{sub oc}) and short circuit current (I{sub sc}) obtained at different illumination intensities was used to determine the solar cell ideality factor. By varying the illuminated area on the solar cell, changes in the ideality factor were studied. The ideality factor obtained increases with decreasing illumination surface ratio. The photo-generated current at the illuminated part of the cell is assumed to act as a dc source that injects charge carriers into the p-n junction of the whole solar cell while the dark region of the solar cell operates in a low space charge recombination regime with small diffusion currents. From this analysis, a different model of a spot illuminated cell that uses the variation of ideality factor with the illuminated area is proposed.

Experimental analysis and modeling of the IV characteristics of photovoltaic solar cells under solar spectrum spot illumination

International Nuclear Information System (INIS)

Munji, M.K.; Dyk, E.E. van; Vorster, F.J.

2009-01-01

In this paper, some models that have been put forward to explain the characteristics of a photovoltaic solar cell device under solar spot-illumination are investigated. In the experimental procedure, small areas of the cell were selected and illuminated at different solar intensities. The solar cell open circuit voltage (V oc ) and short circuit current (I sc ) obtained at different illumination intensities was used to determine the solar cell ideality factor. By varying the illuminated area on the solar cell, changes in the ideality factor were studied. The ideality factor obtained increases with decreasing illumination surface ratio. The photo-generated current at the illuminated part of the cell is assumed to act as a dc source that injects charge carriers into the p-n junction of the whole solar cell while the dark region of the solar cell operates in a low space charge recombination regime with small diffusion currents. From this analysis, a different model of a spot illuminated cell that uses the variation of ideality factor with the illuminated area is proposed.

太阳能电池的最终效率探讨%Discussion about ultimate efficiency of solar cells

Institute of Scientific and Technical Information of China (English)

钱志成; 戴晓; 史鹏; 尹万健; 娄艳辉; 邹贵付

2016-01-01

Solar energy is considered as one of the most promising green energy due to clean,safe,long life,and renewable advantages.Solar cell is an electrical device that converts solar energy directly into electric power on the basis of photovoltaic effect.Fritts built the first solar cell in 1883.Although the initial efficiency was only 1％,it has been exciting to know that the power conversion efficiency of solar cells is endlessly improved since it was reported.Up to now,the efficiency of commercial silicon solar cell is between 10％-18％.The latest research shows that the best efficiency of perovskite solar cell has been improved to be over 20％ within several years.As it is well known,the maximum power conversion efficiency of single-junction solar cells are only around 33％ according to the ShockleyQueisser limit.With the development of new materials and high technologies,one issue is emerging:What is the ultimate efficiency of solar cells? The highest efficiency of solar cell is possible to break the Schockley-Queisser limit? How to further enhance the efficiency of solar cell? All the questions are hard to answer at present.Surrounding these concerns,this article presents a brief review about the efficiency limits of different solar cells.It might help to understand the ultimate efficiency of solar cells.The details address the basic principle,advantages and disadvantages of single-junction,multi-junction and other new concept solar cells regarding the power conversion efficiency.The review also includes the solar cell materials involving silicon,compound,perovskite,quantum dot,hybrid materials,etc.Finally,we look ahead into the prospect of new concept solar cells and the maximum power conversion efficiency.%太阳能电池利用光伏效应将太阳能直接转换为电能,拥有可再生、清洁、安全、寿命长等优点,被认为是最有前途的可再生能源技术之一.虽然光电转化效率在10％～18％的太阳能电池已经实�

Hybrid Silicon Nanocone–Polymer Solar Cells

KAUST Repository

Jeong, Sangmoo

2012-06-13

Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices because the Schottky junction between the Si and organic material can be formed by solution processes at a low temperature. In this study, we demonstrate a hybrid solar cell composed of Si nanocones and conductive polymer. The optimal nanocone structure with an aspect ratio (height/diameter of a nanocone) less than two allowed for conformal polymer surface coverage via spin-coating while also providing both excellent antireflection and light trapping properties. The uniform heterojunction over the nanocones with enhanced light absorption resulted in a power conversion efficiency above 11%. Based on our simulation study, the optimal nanocone structures for a 10 μm thick Si solar cell can achieve a short-circuit current density, up to 39.1 mA/cm 2, which is very close to the theoretical limit. With very thin material and inexpensive processing, hybrid Si nanocone/polymer solar cells are promising as an economically viable alternative energy solution. © 2012 American Chemical Society.

Hybrid Silicon Nanocone–Polymer Solar Cells

KAUST Repository

Jeong, Sangmoo; Garnett, Erik C.; Wang, Shuang; Yu, Zongfu; Fan, Shanhui; Brongersma, Mark L.; McGehee, Michael D.; Cui, Yi

2012-01-01

Recently, hybrid Si/organic solar cells have been studied for low-cost Si photovoltaic devices because the Schottky junction between the Si and organic material can be formed by solution processes at a low temperature. In this study, we demonstrate a hybrid solar cell composed of Si nanocones and conductive polymer. The optimal nanocone structure with an aspect ratio (height/diameter of a nanocone) less than two allowed for conformal polymer surface coverage via spin-coating while also providing both excellent antireflection and light trapping properties. The uniform heterojunction over the nanocones with enhanced light absorption resulted in a power conversion efficiency above 11%. Based on our simulation study, the optimal nanocone structures for a 10 μm thick Si solar cell can achieve a short-circuit current density, up to 39.1 mA/cm 2, which is very close to the theoretical limit. With very thin material and inexpensive processing, hybrid Si nanocone/polymer solar cells are promising as an economically viable alternative energy solution. © 2012 American Chemical Society.

Fast temporal fluctuations in single-molecule junctions.

Science.gov (United States)

Ochs, Roif; Secker, Daniel; Elbing, Mark; Mayor, Marcel; Weber, Heiko B

2006-01-01

The noise within the electrical current through single-molecule junctions is studied cryogenic temperature. The organic sample molecules were contacted with the mechanically controlled break-junction technique. The noise spectra refer to a where only few Lorentzian fluctuators occur in the conductance. The frequency dependence shows qualitative variations from sample to sample.

Amorphous and microcrystalline silicon applied in very thin tandem solar cells

Energy Technology Data Exchange (ETDEWEB)

Schicho, Sandra

2011-07-28

Thin-film solar cells are fabricated by low-cost production processes, and are therefore an alternative to conventionally used wafer solar cells based on crystalline silicon. Due to the different band gaps, tandem cells that consist of amorphous (a-Si:H) and microcrystalline ({mu}c-Si:H) single junction solar cells deposited on top of each other use the solar spectrum much more efficient than single junction solar cells. The silicon layers are usually deposited on TCO (Transparent Conductive Oxide)-coated glass and metal- or plastic foils. Compared to the CdTe and CIGS based thin-film technologies, silicon thin-film solar cells have the advantage that no limitation of raw material supply is expected and no toxic elements are used. Nevertheless, the production cost per Wattpeak is the decisive factor concerning competitiveness and can be reduced by, e.g., shorter deposition times or reduced material consumption. Both cost-reducing conceptions are simultaneously achieved by reducing the a-Si:H and {mu}c-Si:H absorber layer thicknesses in a tandem device. In the work on hand, the influence of an absorber layer thickness reduction up to 77% on the photovoltaic parameters of a-Si:H/{mu}c-Si:H tandem solar cells was investigated. An industry-oriented Radio Frequency Plasma-Enhanced Chemical Vapour Deposition (RF-PECVD) system was used to deposit the solar cells on glass substrates coated with randomly structured TCO layers. The thicknesses of top and bottom cell absorber layers were varied by adjusting the deposition time. Reduced layer thicknesses lead to lower absorption and, hence, to reduced short-circuit current densities which, however, are partially balanced by higher open-circuit voltages and fill factors. Furthermore, by using very thin amorphous top cells, the light-induced degradation decreases tremendously. Accordingly, a thickness reduction of 75% led to an efficiency loss of only 21 %. By adjusting the parameters for the deposition of a-Si:H top cells, a

Space Photovoltaic Concentrator Using Robust Fresnel Lenses, 4-Junction Cells, Graphene Radiators, and Articulating Receivers

Science.gov (United States)

O'Neill, Mark; McDanal, A. J.; Brandhorst, Henry; Spence, Brian; Iqbal, Shawn; Sharps, Paul; McPheeters, Clay; Steinfeldt, Jeff; Piszczor, Michael; Myers, Matt

2016-01-01

At the 42nd PVSC, our team presented recent advances in our space photovoltaic concentrator technology. These advances include more robust Fresnel lenses for optical concentration, more thermally conductive graphene radiators for waste heat rejection, improved color-mixing lens technology to minimize chromatic aberration losses with 4-junction solar cells, and an articulating photovoltaic receiver enabling single-axis sun-tracking, while maintaining a sharp focal line despite large beta angles of incidence. In the past year, under a NASA Phase II SBIR program, our team has made much additional progress in the development of this new space photovoltaic concentrator technology, as described in this paper.

Surface preparation effects on efficient indium-tin-oxide-CdTe and CdS-CdTe heterojunction solar cells

Science.gov (United States)

Werthen, J. G.; Fahrenbruch, A. L.; Bube, R. H.; Zesch, J. C.

1983-05-01

The effects of CdTe surface preparation and subsequent junction formation have been investigated through characterization of ITO/CdTe and CdS/CdTe heterojunction solar cells formed by electron beam evaporation of indium-tin-oxide (ITO) and CdS onto single crystal p-type CdTe. Surfaces investigated include air-cleaved (110) surfaces, bromine-in-methanol etched (110) and (111) surfaces, and teh latter surfaces subjected to a hydrogen heat treatment. Both air-cleaved and hydrogen heat treated surfaces have a stoichiometric Cd to Te ratio. The ITO/CdTe junction formation process involves an air heat treatment, which ahs serious effects on the behavior of junctions formed on these surfaces. Etched surfaces which have a large excesss of Te, are less affected by the junction formation process and result in ITO/CdTe heterojunctions with solar efficiencies of 9% (Vsc =20 mA/cm2). Use of low-doped CdTe results in junctions characterized by considerably larger open-circuit votages (Voc =0.81 V) which are attributable to increasing diode factors caused by a shift from interfacial recombination to recombination in the depletion region. Resulting solar efficiencies reach 10.5% which is the highest value reported to date for a genuine CdTe heterojunction, CdS/CdTe heterojunctions show a strong dependence on CdTe surface condition, but less influence on the junction formation process. Solar efficiencies of 7.5% on an etched and heat treated surface are observed. All of these ITO/CdTe and CdS/CdTe heterojunctions have been stable for at least 10 months.

Proposal of leak path passivation for InGaN solar cells to reduce the leakage current

Energy Technology Data Exchange (ETDEWEB)

Wang, Ke, E-mail: ke.wang@chiba-u.jp; Imai, Daichi; Kusakabe, Kazuhide [Center for SMART Green Innovation Research, Chiba University, 1-33, Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Yoshikawa, Akihiko, E-mail: yoshi@faculty.chiba-u.jp [Center for SMART Green Innovation Research, Chiba University, 1-33, Yayoi-cho, Inage-ku, Chiba 263-8522 (Japan); Department of Information and Communication Engineering, Graduate School of Engineering, Kogakuin University, Nakano-cho, Hachioji, Tokyo 2665-1 (Japan)

2016-01-25

We propose some general ways to passivate the leak paths in InGaN solar cells and report some experimental evidences of its effectiveness. By adopting an AlOx passivation process, the photovoltaic performances of GaN pn-junctions and InGaN solar cells, grown by molecular beam epitaxy, have been significantly improved. The open circuit voltage under 1 sun illumination increases from 1.46 to 2.26 V for a GaN pn junction, and from 0.95 to 1.27 V for an InGaN solar cell, demonstrating evidence of leak path passivation (LPP) by AlOx. The proposed LPP is expected to be a realistic way to exploit the potential of thick and relaxed but defective InGaN for solar cell applications.

Passivation of nanocrystalline TiO2 junctions by surface adsorbed phosphinate amphiphiles enhances the photovoltaic performance of dye sensitized solar cells

KAUST Repository

Wang, Mingkui

2009-01-01

We report a new class of molecular insulators that electronically passivate the surface of nanocrystalline titania films for high performance dye sensitized solar cells (DSC). Using electrical impedance measurements we demonstrate that co-adsorption of dineohexyl bis-(3,3-dimethyl-butyl)-phosphinic acid (DINHOP), along with the amphiphilic ruthenium sensitizer Z907Na increased substantially the power output of the cells mainly due to a retardation of interfacial recombination of photo-generated charge carriers. The use of phosphinates as anchoring groups opens up new avenues for modification of the surface by molecular insulators, sensitizers and other electro-active molecules to realize the desired optoelectronic performance of devices based on oxide junctions. © 2009 The Royal Society of Chemistry.

Applications of AMPS-1D for solar cell simulation

Science.gov (United States)

Zhu, Hong; Kalkan, Ali Kaan; Hou, Jingya; Fonash, Stephen J.

1999-03-01

The AMPS-1D PC computer program is now used by over 70 groups world-wide for detector and solar cell analysis. It has proved to be a very powerful tool in understanding device operation and physics for single crystal, poly-crystalline and amorphous structures. For example, AMPS-1D has been successful in explaining the "red kink" [1] and the "transient effect" in CdS/CIGS poly-crystalline solar cells. It has been used to show that thin film poly-Si structures, with reasonable light trapping, are capable of competitive solar cell conversion efficiencies. In the case of a-Si:H structures, it has been used, for example, to settle the discrepancies in bandgap measurement, to predict the effective QE>1 phenomenon later seen in these materials [2], to determine the relative roles of interface and bulk properties, and to point the direction toward 16% triple junction structures. In general AMPS-1D is used for cell and detector design, material parameter sensitivity studies, and parameter extraction. Recently we have shown that it can be used to determine optimum structure and light and voltage biasing conditions in the material parameter extraction function. Information on AMPS can be found at www.psu.edu/dept/AMPS/amps_web/AMPS.html and at other web sites set up by user groups.

High Efficiency Quantum Dot III-V Multijunction Solar Cell for Space Power, Phase II

Data.gov (United States)

National Aeronautics and Space Administration — We are proposing to utilize quantum dots to develop a super high-efficiency multijunction III-V solar cell for space. In metamorphic triple junction space solar...

Theoretical results on the tandem junction solar cell based on its Ebers-Moll transistor model

Science.gov (United States)

Goradia, C.; Vaughn, J.; Baraona, C. R.

1980-01-01

A one-dimensional theoretical model of the tandem junction solar cell (TJC) with base resistivity greater than about 1 ohm-cm and under low level injection has been derived. This model extends a previously published conceptual model which treats the TJC as an npn transistor. The model gives theoretical expressions for each of the Ebers-Moll type currents of the illuminated TJC and allows for the calculation of the spectral response, I(sc), V(oc), FF and eta under variation of one or more of the geometrical and material parameters and 1MeV electron fluence. Results of computer calculations based on this model are presented and discussed. These results indicate that for space applications, both a high beginning of life efficiency, greater than 15% AM0, and a high radiation tolerance can be achieved only with thin (less than 50 microns) TJC's with high base resistivity (greater than 10 ohm-cm).

Single Molecule Nanoelectrochemistry in Electrical Junctions.

Science.gov (United States)

Nichols, Richard J; Higgins, Simon J

2016-11-15

It is now possible to reliably measure single molecule conductance in a wide variety of environments including organic liquids, ultrahigh vacuum, water, ionic liquids, and electrolytes. The most commonly used methods deploy scanning probe microscopes, mechanically formed break junctions, or lithographically formed nanogap contacts. Molecules are generally captured between a pair of facing electrodes, and the junction current response is measured as a function of bias voltage. Gating electrodes can also be added so that the electrostatic potential at the molecular bridge can be independently controlled by this third noncontacting electrode. This can also be achieved in an electrolytic environment using a four-electrode bipotentiostatic configuration, which allows independent electrode potential control of the two contacting electrodes. This is commonly realized using an electrochemical STM and enables single molecule electrical characterization as a function of electrode potential and redox state of the molecular bridge. This has emerged as a powerful tool in modern interfacial electrochemistry and nanoelectrochemistry for studying charge transport across single molecules as a function of electrode potential and the electrolytic environments. Such measurements are possible in electrolytes ranging from aqueous buffers to nonaqueous ionic liquids. In this Account, we illustrate a number of examples of single molecule electrical measurements under electrode potential control use a scanning tunneling microscope (STM) and demonstrate how these can help in the understanding of charge transport in single molecule junctions. Examples showing charge transport following phase coherent tunneling to incoherent charge hopping across redox active molecular bridges are shown. In the case of bipyridinium (or viologen) molecular wires, it is shown how electrochemical reduction leads to an increase of the single molecule conductance, which is controlled by the liquid electrochemical

Voltage Losses in Organic Solar Cells: Understanding the Contributions of Intramolecular Vibrations to Nonradiative Recombinations

KAUST Repository

Chen, Xiankai

2017-12-18

The large voltage losses usually encountered in organic solar cells significantly limit the power conversion efficiencies (PCEs) of these devices, with the result that the current highest PCE values in single-junction organic photovoltaic remain smaller than for other solar cell technologies, such as crystalline silicon or perovskite solar cells. In particular, the nonradiative recombinations to the electronic ground state from the lowest-energy charge-transfer (CT) states at the donor-acceptor interfaces in the active layer of organic devices, are responsible for a significant part of the voltage losses. Here, to better comprehend the nonradiative voltage loss mechanisms, a fully quantum-mechanical rate formula is employed within the framework of time-dependent perturbation theory, combined with density functional theory. The objective is to uncover the specific contributions of intramolecular vibrations to the CT-state nonradiative recombinations in several model systems, which include small-molecule and polymer donors as well as fullerene and nonfullerene acceptors.

Spectral response of a polycrystalline silicon solar cell

International Nuclear Information System (INIS)

Ba, B.; Kane, M.

1994-10-01

A theoretical study of the spectral response of a polycrystalline silicon n-p junction solar cell is presented. The case of a fibrously oriented grain structure, involving grain boundary recombination velocity and grain size effects is discussed. The contribution of the base region on the internal quantum efficiency Q int is computed for different grain sizes and grain boundary recombination velocities in order to examine their influence. Suggestions are also made for the determination of base diffusion length in polycrystalline silicon solar cells using the spectral response method. (author). 15 refs, 4 figs

Solar Cells Based on Inks of n-Type Colloidal Quantum Dots

KAUST Repository

Ning, Zhijun; Dong, Haopeng; Zhang, Qiong; Voznyy, Oleksandr; Sargent, Edward H.

2014-01-01

© 2014 American Chemical Society. New inorganic ligands including halide anions have significantly accelerated progress in colloidal quantum dot (CQD) photovoltaics in recent years. All such device reports to date have relied on halide treatment during solid-state ligand exchanges or on co-treatment of long-aliphatic-ligand-capped nanoparticles in the solution phase. Here we report solar cells based on a colloidal quantum dot ink that is capped using halide-based ligands alone. By judicious choice of solvents and ligands, we developed a CQD ink from which a homogeneous and thick colloidal quantum dot solid is applied in a single step. The resultant films display an n-type character, making it suitable as a key component in a solar-converting device. We demonstrate two types of quantum junction devices that exploit these iodide-ligand-based inks. We achieve solar power conversion efficiencies of 6% using this class of colloids.

Solar Cells Based on Inks of n-Type Colloidal Quantum Dots

KAUST Repository

Ning, Zhijun

2014-10-28

© 2014 American Chemical Society. New inorganic ligands including halide anions have significantly accelerated progress in colloidal quantum dot (CQD) photovoltaics in recent years. All such device reports to date have relied on halide treatment during solid-state ligand exchanges or on co-treatment of long-aliphatic-ligand-capped nanoparticles in the solution phase. Here we report solar cells based on a colloidal quantum dot ink that is capped using halide-based ligands alone. By judicious choice of solvents and ligands, we developed a CQD ink from which a homogeneous and thick colloidal quantum dot solid is applied in a single step. The resultant films display an n-type character, making it suitable as a key component in a solar-converting device. We demonstrate two types of quantum junction devices that exploit these iodide-ligand-based inks. We achieve solar power conversion efficiencies of 6% using this class of colloids.

Effect of High-Temperature Annealing on Ion-Implanted Silicon Solar Cells

Directory of Open Access Journals (Sweden)

Hyunpil Boo

2012-01-01

Full Text Available P-type and n-type wafers were implanted with phosphorus and boron, respectively, for emitter formation and were annealed subsequently at 950∼1050∘C for 30∼90 min for activation. Boron emitters were activated at 1000∘C or higher, while phosphorus emitters were activated at 950∘C. QSSPC measurements show that the implied Voc of boron emitters increases about 15 mV and the J01 decreases by deep junction annealing even after the activation due to the reduced recombination in the emitter. However, for phosphorus emitters the implied Voc decreases from 622 mV to 560 mV and the J01 increases with deep junction annealing. This is due to the abrupt decrease in the bulk lifetime of the p-type wafer itself from 178 μs to 14 μs. PC1D simulation based on these results shows that, for p-type implanted solar cells, increasing the annealing temperature and time abruptly decreases the efficiency (Δηabs=−1.3%, while, for n-type implanted solar cells, deep junction annealing increases the efficiency and Voc, especially (Δηabs=+0.4% for backside emitter solar cells.

High efficiency copper indium gallium diselenide (CIGS) thin film solar cells

Science.gov (United States)

Rajanikant, Ray Jayminkumar

pressure of 10-5 mbar. The thickness of the film was kept 1 mum for the solar cell device preparation. Rapid Thermal Annealing (RTA) is carried out of CIGS thin film at 500 °C for 2 minutes in the argon atmosphere. Annealing process mainly improves the grain growth of the CIGS and, hence the surface roughness, which is essential for a multilayered semiconductor structure. Thin layer of n-type highly resistive cadmium sulphide (CdS), generally known as a "buffer" layer, is deposited on CIGS layer by thermal and flash evaporation method at the substrate temperature of 100 °C. The CdS thin film plays a crucial role in the formation of the p-n junction and thus the solar cell device performance. The effect of CdS film substrate temperature ranging from 50 °C to 200 °C is observed. At the 100 °C substrate temperature, CdS thin film shows the near to 85 % of transmission in the visible region and resistivity of the order of greater then 20 x 109 Ocm, which are the essential characteristics of buffer layer. The bi-layer structure of ZnO, containing 70 nm i-ZnO and 500 nm aluminum (Al) doped ZnO, act as a transparent front-contact for CIGS thin film solar cell. These layers were deposited using RF magnetron sputtering. i-ZnO thin film acts as an insulating layer, which prevents the recombination of the photo-generated carries and also minimizes the lattice miss match defects between CdS and Al-ZnO. The resistivity of iZnO and Al-ZnO is of the order of 1012 Ocm and 10-4 Ocm, respectively. Al-ZnO thin films act as transparent conducting top electrode having transparency of about 85 % in the visible region. On Al-ZnO layer the finger-type grid pattern of silver (Ag), 200 nm thick, is deposited for the collection of photo-generated carriers. The thin film based multilayered structure Mo / CIGS / CdS / i-ZnO / Al-ZnO / Ag grid of CIGS solar cell is grown one by one on a single glass substrate. As-prepared CIGS solar cell device shows a minute photovoltaic effect. For the further

Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

Energy Technology Data Exchange (ETDEWEB)

Kumar, A.; Ravi, K. V.

2011-06-01

In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

Zinc tin oxide as high-temperature stable recombination layer for mesoscopic perovskite/silicon monolithic tandem solar cells

KAUST Repository

Werner, Jérémie

2016-12-05

Perovskite/crystalline silicon tandem solar cells have the potential to reach efficiencies beyond those of silicon single-junction record devices. However, the high-temperature process of 500 °C needed for state-of-the-art mesoscopic perovskite cells has, so far, been limiting their implementation in monolithic tandem devices. Here, we demonstrate the applicability of zinc tin oxide as a recombination layer and show its electrical and optical stability at temperatures up to 500 °C. To prove the concept, we fabricate monolithic tandem cells with mesoscopic top cell with up to 16% efficiency. We then investigate the effect of zinc tin oxide layer thickness variation, showing a strong influence on the optical interference pattern within the tandem device. Finally, we discuss the perspective of mesoscopic perovskite cells for high-efficiency monolithic tandem solar cells. © 2016 Author(s)

Effect of silicon solar cell processing parameters and crystallinity on mechanical strength

Energy Technology Data Exchange (ETDEWEB)

Popovich, V.A.; Yunus, A.; Janssen, M.; Richardson, I.M. [Delft University of Technology, Department of Materials Science and Engineering, Delft (Netherlands); Bennett, I.J. [Energy Research Centre of the Netherlands, Solar Energy, PV Module Technology, Petten (Netherlands)

2011-01-15

Silicon wafer thickness reduction without increasing the wafer strength leads to a high breakage rate during subsequent handling and processing steps. Cracking of solar cells has become one of the major sources of solar module failure and rejection. Hence, it is important to evaluate the mechanical strength of solar cells and influencing factors. The purpose of this work is to understand the fracture behavior of silicon solar cells and to provide information regarding the bending strength of the cells. Triple junctions, grain size and grain boundaries are considered to investigate the effect of crystallinity features on silicon wafer strength. Significant changes in fracture strength are found as a result of metallization morphology and crystallinity of silicon solar cells. It is observed that aluminum paste type influences the strength of the solar cells. (author)

Development, Qualification and Production of Space Solar Cells with 30% EOL Efficiency

Science.gov (United States)

Guter, Wolfgang; Ebel, Lars; Fuhrmann, Daniel; Kostler, Wolfgang; Meusel, Matthias

2014-08-01

AZUR SPACE's latest qualified solar cell product 3G30-advanced provides a high end-of-life (EOL) efficiency of 27.8% for 5E14 (1 MeV e-/cm2) at low production costs. In order to further reduce the mass, the 3G30-advanced was thinned down to as thin as 20 μm and tested in space. Next generation solar cells must exceed the EOL efficiency of the 3G30-advanced and therefore will utilize the excess current of the Ge subcell. This can be achieved by a metamorphic cell concept. While average beginning-of-life efficiencies above 31% have already been demonstrated with upright metamorphic triple-junction cells, AZUR's next generation product will comprise a metamorphic 4- junction device targeting 30% EOL.

High-performance ternary blend polymer solar cells involving both energy transfer and hole relay processes

OpenAIRE

Lu, Luyao; Chen, Wei; Xu, Tao; Yu, Luping

2015-01-01

The integration of multiple materials with complementary absorptions into a single junction device is regarded as an efficient way to enhance the power conversion efficiency (PCE) of organic solar cells (OSCs). However, because of increased complexity with one more component, only limited high-performance ternary systems have been demonstrated previously. Here we report an efficient ternary blend OSC with a PCE of 9.2%. We show that the third component can reduce surface trap densities in the...

Study on photoelectric parameter measurement method of high capacitance solar cell

Science.gov (United States)

Zhang, Junchao; Xiong, Limin; Meng, Haifeng; He, Yingwei; Cai, Chuan; Zhang, Bifeng; Li, Xiaohui; Wang, Changshi

2018-01-01

The high efficiency solar cells usually have high capacitance characteristic, so the measurement of their photoelectric performance usually requires long pulse width and long sweep time. The effects of irradiance non-uniformity, probe shielding and spectral mismatch on the IV curve measurement are analyzed experimentally. A compensation method for irradiance loss caused by probe shielding is proposed, and the accurate measurement of the irradiance intensity in the IV curve measurement process of solar cell is realized. Based on the characteristics that the open circuit voltage of solar cell is sensitive to the junction temperature, an accurate measurement method of the temperature of solar cell under continuous irradiation condition is proposed. Finally, a measurement method with the characteristic of high accuracy and wide application range for high capacitance solar cell is presented.

Impedance spectroscopy of CdTe thin film solar cells

Energy Technology Data Exchange (ETDEWEB)

Weiss, Charlotte; Heisler, Christoph; Reisloehner, Udo; Ronning, Carsten; Wesch, Werner [Institute of Solid State Physics, University of Jena, Max-Wien-Platz 1, D-07743 Jena (Germany)

2012-07-01

Impedance Spectroscopy (IS) is a widely used method to analyze dielectric properties of specimen as a function of frequency. Typically this characterization method delivers an equivalent circuit diagram of the device under examination to describe its electrical properties. Traditionally IS is used in coating evaluation, corrosion monitoring and in electrochemistry. During the last years the method became more important also in the field of electrical characterization of solar cells. In our work we use IS for the electrical characterization of thin film CdTe solar cells. The measurement is done at room temperature without illumination in a frequency domain from 20 Hz to 2 MHz. The samples are measured under variable forward bias. The results match insufficiently with the model of two resistor-capacitor circuits in series which is commonly used to describe the p-n junction and the blocking back contact. For better consistency, other models from the literature are used and discussed. From the results a conclusion is drawn about the properties of the solar cell such as the nature of the p-n junction or the performance of the back contact.

Achieving 12.8% Efficiency by Simultaneously Improving Open-Circuit Voltage and Short-Circuit Current Density in Tandem Organic Solar Cells.

Science.gov (United States)

Qin, Yunpeng; Chen, Yu; Cui, Yong; Zhang, Shaoqing; Yao, Huifeng; Huang, Jiang; Li, Wanning; Zheng, Zhong; Hou, Jianhui

2017-06-01

Tandem organic solar cells (TOSCs), which integrate multiple organic photovoltaic layers with complementary absorption in series, have been proved to be a strong contender in organic photovoltaic depending on their advantages in harvesting a greater part of the solar spectrum and more efficient photon utilization than traditional single-junction organic solar cells. However, simultaneously improving open circuit voltage (V oc ) and short current density (J sc ) is a still particularly tricky issue for highly efficient TOSCs. In this work, by employing the low-bandgap nonfullerene acceptor, IEICO, into the rear cell to extend absorption, and meanwhile introducing PBDD4T-2F into the front cell for improving V oc , an impressive efficiency of 12.8% has been achieved in well-designed TOSC. This result is also one of the highest efficiencies reported in state-of-the-art organic solar cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Improved electron density through hetero-junction binary sensitized TiO2/ CdTe / D719 system as photoanode for dye sensitized solar cell

Science.gov (United States)

Pandey, A. K.; Ahmad, Muhammad Shakeel; Alizadeh, Mahdi; Rahim, Nasrudin Abd

2018-07-01

The combined effect of dual sensitization and hetero-junction symmetry has been investigated on the performance of TiO2 based dye sensitized solar cell. CdTe nanoparticles have been introduced in TiO2 matrix to function as sensitizer as well as act as hetero-junction between D719 dye and TiO2 nanoarchitecture. Four concentrations of CdTe i.e. 0.5 wt%, 2 wt%, 5 wt% and 8 wt% have been investigated. Morphological and compositional studies have been conducted using scanning electron microscope (SEM) and X-ray diffraction (XRD) respectively. Light absorption characteristics have been investigated by employing Uv-vis spectroscopy and the overall performance has been studied using solar simulator and electrochemical impedance spectroscopy (EIS). Performance has been found to be increased with the addition of CdTe due to high electron density and reduction in recombination reactions. An increase of 41.73% in incident photo conversion efficiency (IPCE) and 75.57% in short circuit current density (Jsc) have been recorded for the specimens containing 5 wt% CdTe compared to bare TiO2 based DSSCs. Further addition of CdTe leads to reduction in overall performance of DSSCs.

Quantum-Tuned Multijunction Solar Cells

Science.gov (United States)

Koleilat, Ghada I.

Multijunction solar cells made from a combination of CQDs of differing sizes and thus bandgaps are a promising means by which to increase the energy harvested from the Sun's broad spectrum. In this dissertation, we first report the systematic engineering of 1.6 eV PbS CQD solar cells, optimal as the front cell responsible for visible wavelength harvesting in tandem photovoltaics. We rationally optimize each of the device's collecting electrodes---the heterointerface with electron accepting TiO2 and the deep-work-function hole-collecting MoO3 for ohmic contact---for maximum efficiency. Room-temperature processing enables flexible substrates, and permits tandem solar cells that integrate a small-bandgap back cell atop a low thermal-budget larger-bandgap front cell. We report an electrode strategy that enables a depleted heterojunction CQD PV device to be fabricated entirely at room temperature. We develop a two-layer donor-supply electrode (DSE) in which a highly doped, shallow work function layer supplies a high density of free electrons to an ultrathin TiO2 layer via charge-transfer doping. Using the DSE we build all-room-temperature-processed small-bandgap (1 eV) colloidal quantum dot solar cells suitable for use as the back junction in tandem solar cells. We further report in this work the first efficient CQD tandem solar cells. We use a graded recombination layer (GRL) to provide a progression of work functions from the hole-accepting electrode in the bottom cell to the electron-accepting electrode in the top cell. The recombination layers must allow the hole current from one cell to recombine, with high efficiency and low voltage loss, with the electron current from the next cell. We conclude our dissertation by presenting the generalized conditions for design of efficient graded recombination layer solar devices. We demonstrate a family of new GRL designs experimentally and highlight the benefits of the progression of dopings and work functions in the

Sputtered indium-tin oxide/cadmium telluride junctions and cadmium telluride surfaces

International Nuclear Information System (INIS)

Courreges, F.G.; Fahrenbruch, A.L.; Bube, R.H.

1980-01-01

The properties of indium-tin oxide (ITO)/CdTe junction solar cells prepared by rf sputtering of ITO on P-doped CdTe single-crystal substrates have been investigated through measurements of the electrical and photovoltaic properties of ITO/CdTe and In/CdTe junctions, and of electron beam induced currents (EBIC) in ITO/CdTe junctions. In addition, surface properties of CdTe related to the sputtering process were investigated as a function of sputter etching and thermal oxidation using the techniques of surface photovoltage and photoluminescence. ITO/CdTe cells prepared by this sputtering method consist of an n + -ITO/n-CdTe/p-CdTe buried homojunction with about a 1-μm-thick n-type CdTe layer formed by heating of the surface of the CdTe during sputtering. Solar efficiencies up to 8% have been observed with V/sub 0c/=0.82 V and J/sub s/c=14.5 mA/cm 2 . The chief degradation mechanism involves a decrease in V/sub 0c/ with a transformation of the buried homojunction structure to an actual ITO/CdTe heterojunction

The enhanced efficiency of graphene-silicon solar cells by electric field doping.

Science.gov (United States)

Yu, Xuegong; Yang, Lifei; Lv, Qingmin; Xu, Mingsheng; Chen, Hongzheng; Yang, Deren

2015-04-28

The graphene-silicon (Gr-Si) Schottky junction solar cell has been recognized as one of the most low-cost candidates in photovoltaics due to its simple fabrication process. However, the low Gr-Si Schottky barrier height largely limits the power conversion efficiency of Gr-Si solar cells. Here, we demonstrate that electric field doping can be used to tune the work function of a Gr film and therefore improve the photovoltaic performance of the Gr-Si solar cell effectively. The electric field doping effects can be achieved either by connecting the Gr-Si solar cell to an external power supply or by polarizing a ferroelectric polymer layer integrated in the Gr-Si solar cell. Exploration of both of the device architecture designs showed that the power conversion efficiency of Gr-Si solar cells is more than twice of the control Gr-Si solar cells. Our study opens a new avenue for improving the performance of Gr-Si solar cells.

Improving poor fill factors for solar cells via light-induced plating

International Nuclear Information System (INIS)

Xing Zhao; Jia Rui; Ding Wuchang; Meng Yanlong; Jin Zhi; Liu Xinyu

2012-01-01

Silicon solar cells are prepared following the conventional fabrication processes, except for the metallization firing process. The cells are divided into two groups with higher and lower fill factors, respectively. After light-induced plating (LIP), the fill factors of the solar cells in both groups with different initial values reach the same level. Scanning electron microscope (SEM) images are taken under the bulk silver electrodes, which prove that the improvement for cells with a poor factor after LIP should benefit from sufficient exploitation of the high density silver crystals formed during the firing process. Moreover, the application of LIP to cells with poor electrode contact performance, such as nanowire cells and radial junction solar cells, is proposed. (semiconductor devices)

Impact of the homogeneous junction breakdown in IBC solar cells on the passivation quality of Al 2 O 3 and SiO 2 : degradation and regeneration behavior

KAUST Repository

Müller, Ralph

2017-09-22

Within the last years, many different approaches for the simplified fabrication of interdigitated back-contact (IBC) solar cells have been developed. Most of those concepts result in emitter and back-surface field (BSF) regions that are in direct contact to each other which leads to a controlled breakdown under reverse bias at the pn junction. In this work, the influence of the reverse breakdown on the passivation quality of AlO and SiO at the pn junction is investigated, not only shedding light on the degradation but also on the regeneration behavior of the cells. It was found that cells with AlO passivation on the back side degrade during reverse breakdown whereas sister cells with SiO passivation were rather unaffected. Consequently, the degradation seems to be related to the passivation layer. However, it is shown that the passivation can be regenerated even under normal operation condition. A possible explanation is the discharging of interface traps, which are getting recharged already at room temperature.

Direct solar energy and its applications

International Nuclear Information System (INIS)

Hamdani, A.J.

1997-01-01

Solar energy, which was a utopian dream forty years ago, is today already on the market, particularly for specialized uses and in remote areas. Even solar cells are now on the eve of becoming economically competitive. After a brief account of solar-cell theory, this paper gives the essential details of Photovoltaic Module Manufacturing Technologies, Single Crystal Technology, Fabrication of Wafers, Fabrication of Solar Cell, Photovoltaic Module, Multi Crystalline Silicon, Amorphous Silicon Cell. Semi-conductor based Thin-Film Technology (other than silicon), Copper-Indium Di selenide (IS), Gallium Arsenide, Multi-Junction Devices, as well as Technologies for Improving Conversion Efficiencies, Criteria for high-efficiency Cells and Module Fabrication. It concludes with a section on Direct Utilisation of solar energy, in which a brief description is presented on Solar Thermal Devices, Solar Water Heaters, Calculating hot-water requirements, Solar Stills, Solar Drying, Concentrator Collectors and, finally Measurement of the Solar Resource. At the end, there is a useful Appendix on World-Wide Photovoltaic Cell/Module Manufacturing Capacity Expansion Profile. (author)

Efficient InGaP/GaAs DJ solar cell with double back surface field layer

Directory of Open Access Journals (Sweden)

G.P. Mishra

2015-09-01

Full Text Available An effective and optimised BSF layer is an important layer in both single junction and multijunction solar cells. In this work the use of the double layer BSF for top cell with their varied thicknesses is investigated on GaInP/GaAs DJ solar cell using the computational numerical modelling TCAD tool Silvaco ATLAS. The detail photo-generation rates are determined. The major modelling stages are described and the simulation results are validated with published experimental data in order to describe the accuracy of our results produced. For this optimized cell structure, the maximum Jsc = 17.33 mA/cm2, Voc = 2.66 V, and fill factor (FF = 88.67% are obtained under AM1.5G illumination, exhibiting a maximum conversion efficiency of 34.52% (1 sun and 39.15% (1000 suns.

Effect of AlSb quantum dots on efficiency of GaAs solar cell (Conference Presentation)

Science.gov (United States)

Mansoori, Ahmad; Addamane, Sadhvikas J.; Renteria, Emma J.; Shima, Darryl M.; Hains, Christopher P.; Balakrishnan, Ganesh

2016-09-01

Quantum Dots (QDs) have a broad applications in science and specifically in solar cell. Many research groups show that by adding QDs with lower bandgap respect to host material, the overall absorption of sun spectrum coverage will increase. Here, we propose using QDs with higher band gap respect to host material to improve efficiency of solar cell by improving quantum efficiency. GaAs solar cells have the highest efficiency in single junction solar cells. However, the absorption of GaAs is not good enough in wavelength lower than 550nm. AlSb can absorb shorter wavelength with higher absorption coefficient and also recombination rate should be lower because of higher bandgap of AlSb respect to GaAs. We embed AlSb QDs in GaAs solar cells and results show slight improvement in quantum efficiency and also in overall efficiency. Coverage of AlSb QDs has a direct impact on quality of AlSb QDs and efficiency of cell. In the higher coverage, intermixing between GaAs and AlSb causes to shift bandgap to lower value (having AlGaSb QDs instead of pure AlSb QDs). This intermixing decrease the Voc and overall efficiency of cell. In lower coverage, AlSb can survive from intermixing and overall performance of cell improves. Optimizing growth condition of AlSb QDs is a key point for this work. By using AlSb QDs, we can decrease the thickness of active layer of GaAs solar cells and have a thinner solar cell.

Four-terminal organic solar cell modules with increased annual energy yield

NARCIS (Netherlands)

Gehlhaar, R.; Cheyns, D.; Willigenburg, L. van; Hadipour, A.; Gilot, J.; Radbeh, R.; Aernouts, T.

2013-01-01

The authors present experimental results on mechanically stacked organic solar modules and their advantage over standard tandem architectures. A four-terminal configuration of two single junction modules with complementary absorbing active layers uses the more efficient energy conversion of a tandem

CH(3)NH(3)PbI(3) perovskite / silicon tandem solar cells: characterization based optical simulations.

Science.gov (United States)

Filipič, Miha; Löper, Philipp; Niesen, Bjoern; De Wolf, Stefaan; Krč, Janez; Ballif, Christophe; Topič, Marko

2015-04-06

In this study we analyze and discuss the optical properties of various tandem architectures: mechanically stacked (four-terminal) and monolithically integrated (two-terminal) tandem devices, consisting of a methyl ammonium lead triiodide (CH(3)NH(3)PbI(3)) perovskite top solar cell and a crystalline silicon bottom solar cell. We provide layer thickness optimization guidelines and give estimates of the maximum tandem efficiencies based on state-of-the-art sub cells. We use experimental complex refractive index spectra for all involved materials as input data for an in-house developed optical simulator CROWM. Our characterization based simulations forecast that with optimized layer thicknesses the four-terminal configuration enables efficiencies over 30%, well above the current single-junction crystalline silicon cell record of 25.6%. Efficiencies over 30% can also be achieved with a two-terminal monolithic integration of the sub-cells, combined with proper selection of layer thicknesses.

AN LED-BASED SOLAR SIMULATOR FOR RESEARCH, DEVELOPMENT, AND TESTING OF PHOTOVOLTAIC SPACE POWER SYSTEMS, Phase I

Data.gov (United States)

National Aeronautics and Space Administration — Solar cells are the critical power source for the majority of space missions. The advancement from single junction silicon cells to current, state-of-the-art, triple...

Highly Efficient Perovskite-Perovskite Tandem Solar Cells Reaching 80% of the Theoretical Limit in Photovoltage.

Science.gov (United States)

Rajagopal, Adharsh; Yang, Zhibin; Jo, Sae Byeok; Braly, Ian L; Liang, Po-Wei; Hillhouse, Hugh W; Jen, Alex K-Y

2017-09-01

Organic-inorganic hybrid perovskite multijunction solar cells have immense potential to realize power conversion efficiencies (PCEs) beyond the Shockley-Queisser limit of single-junction solar cells; however, they are limited by large nonideal photovoltage loss (V oc,loss ) in small- and large-bandgap subcells. Here, an integrated approach is utilized to improve the V oc of subcells with optimized bandgaps and fabricate perovskite-perovskite tandem solar cells with small V oc,loss . A fullerene variant, Indene-C 60 bis-adduct, is used to achieve optimized interfacial contact in a small-bandgap (≈1.2 eV) subcell, which facilitates higher quasi-Fermi level splitting, reduces nonradiative recombination, alleviates hysteresis instabilities, and improves V oc to 0.84 V. Compositional engineering of large-bandgap (≈1.8 eV) perovskite is employed to realize a subcell with a transparent top electrode and photostabilized V oc of 1.22 V. The resultant monolithic perovskite-perovskite tandem solar cell shows a high V oc of 1.98 V (approaching 80% of the theoretical limit) and a stabilized PCE of 18.5%. The significantly minimized nonideal V oc,loss is better than state-of-the-art silicon-perovskite tandem solar cells, which highlights the prospects of using perovskite-perovskite tandems for solar-energy generation. It also unlocks opportunities for solar water splitting using hybrid perovskites with solar-to-hydrogen efficiencies beyond 15%. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Modulation and Control of Charge Transport Through Single-Molecule Junctions.

Science.gov (United States)

Wang, Kun; Xu, Bingqian

2017-02-01

The ability to modulate and control charge transport though single-molecule junction devices is crucial to achieving the ultimate goal of molecular electronics: constructing real-world-applicable electronic components from single molecules. This review aims to highlight the progress made in single-molecule electronics, emphasizing the development of molecular junction electronics in recent years. Among many techniques that attempt to wire a molecule to metallic electrodes, the single-molecule break junction (SMBJ) technique is one of the most reliable and tunable experimental platforms for achieving metal-molecule-metal configurations. It also provides great freedom to tune charge transport through the junction. Soon after the SMBJ technique was introduced, it was extensively used to measure the conductances of individual molecules; however, different conductances were obtained for the same molecule, and it proved difficult to interpret this wide distribution of experimental data. This phenomenon was later found to be mainly due to a lack of precise experimental control and advanced data analysis methods. In recent years, researchers have directed considerable effort into advancing the SMBJ technique by gaining a deeper physical understanding of charge transport through single molecules and thus enhancing its potential applicability in functional molecular-scale electronic devices, such as molecular diodes and molecular transistors. In parallel with that research, novel data analysis methods and approaches that enable the discovery of hidden yet important features in the data are being developed. This review discusses various aspects of molecular junction electronics, from the initial goal of molecular electronics, the development of experimental techniques for creating single-molecule junctions and determining single-molecule conductance, to the characterization of functional current-voltage features and the investigation of physical properties other than charge

Effect of Non-Stoichiometric Solution Chemistry on Improving the Performance of Wide-Bandgap Perovskite Solar Cells

Energy Technology Data Exchange (ETDEWEB)

Zhu, Kai [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Yang, Mengjin [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Kim, Donghoe [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Li, Zhen [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Reid, Obadiah G [National Renewable Energy Laboratory (NREL), Golden, CO (United States); Yu, Yue [University of Toledo; Song, Zhaoning [University of Toledo; Zhao, Dewei [University of Toledo; Wang, Changlei [University of Toledo; Li, Liwei [ENN Energy Research Institute; ENN Solar Energy Co., Ltd.; Meng, Yuan [ENN Energy Research Institute; ENN Solar Energy Co., Ltd.; Guo, Ted [ENN Energy Research Institute; ENN Solar Energy Co., Ltd.; Yan, Yanfa [University of Toledo

2017-10-18

A high-efficiency wide-bandgap (WBG) perovskite solar cell is critical for developing perovskite-related (e.g., all-perovskite, perovskite/Si, or perovskite/Cu(In,Ga)Se2) tandem devices. Here, we demonstrate the use of non-stoichiometric precursor chemistry with excess methylammonium halides (MAX; X = I, Br, or Cl) for preparing high-quality ~1.75-eV FA0.83Cs0.17Pb(I0.6Br0.4)3 perovskite solar cells. Among various methylammonium halides, using excess MABr in the non-stoichiometric precursor exhibits the strongest effect on improving perovskite crystallographic properties and device characteristics without affecting the perovskite composition. In contrast, using excess MAI significantly reduces the bandgap of perovskite due to the replacement of Br with I. Using 40% excess MABr, we demonstrate a single-junction WBG perovskite solar cell with stabilized efficiency of 16.4%. We further demonstrate a 20.3%-efficient 4-terminal tandem device by using a 14.7%-efficient semi-transparent WBG perovskite top cell and an 18.6%-efficient unfiltered (5.6%-efficient filtered) Si bottom cell.

NASA Glenn Research Center Solar Cell Experiment Onboard the International Space Station

Science.gov (United States)

Myers, Matthew G.; Wolford, David S.; Prokop, Norman F.; Krasowski, Michael J.; Parker, David S.; Cassidy, Justin C.; Davies , William E.; Vorreiter, Janelle O.; Piszczor, Michael F.; Mcnatt, Jeremiah S.;

Carrier extraction behaviour in type II GaSb/GaAs quantum ring solar cells

International Nuclear Information System (INIS)

Fujita, Hiromi; James, Juanita; Carrington, Peter J; Marshall, Andrew R J; Krier, Anthony; Wagener, Magnus C; Botha, Johannes R

2014-01-01

The introduction of quantum dot (QD) or quantum ring (QR) nanostructures into GaAs single-junction solar cells has shown enhanced photo-response above the GaAs absorption edge, because of sub-bandgap photon absorption. However, to further improve solar cell performance a better understanding of the mechanisms of photogenerated carrier extraction from QDs and QRs is needed. In this work we have used a direct excitation technique to study type II GaSb/GaAs quantum ring solar cells using a 1064 nm infrared laser, which enables us to excite electron–hole pairs directly within the GaSb QRs without exciting the GaAs host material. Temperature and laser intensity dependence of the current–voltage characteristics revealed that the thermionic emission process produced the dominant contribution to the photocurrent and accounts for 98.9% of total photocurrent at 0 V and 300 K. Although the tunnelling process gives only a low contribution to the photocurrent, an enhancement of the tunnelling current was clearly observed when an external electric field was applied. (paper)

Solar spectrum conversion for photovoltaics using nanoparticles

OpenAIRE

Sark, W.G.J.H.M. van; Meijerink, A.; Schropp, R.E.I.

2012-01-01

The possibility to tune chemical and physical properties in nanosized materials has a strong impact on a variety of technologies, including photovoltaics. One of the prominent research areas of nanomaterials for photovoltaics involves spectral conversion. Conventional single-junction semiconductor solar cells only effectively convert photons of energy close to the semiconductor band gap (Eg) as a result of the mismatch between the incident solar spectrum and the spectral absorption properties...

Development of a Novel Hybrid Multi-Junction Architecture for Silicon Solar Cells

Science.gov (United States)

2015-03-26

Section 2.2.2) were set and verified with a pyranometer and thermocouple probe prior to testing. Voltage and 52 current readings were then taken...without other parameters interfering. The values were recorded by placing the cells above a pyranometer that records intensity. Any ambient light was...Rapid thermal annealing Fabrication XPS-300 Solar Light Tester Measuring solar cell response Testing PMA2100 Pyranometer Measuring irradiance Testing

Composition-graded nanowire solar cells fabricated in a single process for spectrum-splitting photovoltaic systems.

Science.gov (United States)

Caselli, Derek; Liu, Zhicheng; Shelhammer, David; Ning, Cun-Zheng

2014-10-08

Nanomaterials such as semiconductor nanowires have unique features that could enable novel optoelectronic applications such as novel solar cells. This paper aims to demonstrate one such recently proposed concept: Monolithically Integrated Laterally Arrayed Multiple Band gap (MILAMB) solar cells for spectrum-splitting photovoltaic systems. Two cells with different band gaps were fabricated simultaneously in the same process on a single substrate using spatially composition-graded CdSSe alloy nanowires grown by the Dual-Gradient Method in a chemical vapor deposition system. CdSSe nanowire ensemble devices tested under 1 sun AM1.5G illumination achieved open-circuit voltages up to 307 and 173 mV and short-circuit current densities as high as 0.091 and 0.974 mA/cm(2) for the CdS- and CdSe-rich cells, respectively. The open-circuit voltages were roughly three times those of similar CdSSe film cells fabricated for comparison due to the superior optical quality of the nanowires. I-V measurements were also performed using optical filters to simulate spectrum-splitting. The open-circuit voltages and fill factors of the CdS-rich subcells were uniformly larger than the corresponding CdSe-rich cells for similar photon flux, as expected. This suggests that if all wires can be contacted, the wide-gap cell is expected to have greater output power than the narrow-gap cell, which is the key to achieving high efficiencies with spectrum-splitting. This paper thus provides the first proof-of-concept demonstration of simultaneous fabrication of MILAMB solar cells. This approach to solar cell fabrication using single-crystal nanowires for spectrum-splitting photovoltaics could provide a future low-cost high-efficiency alternative to the conventional high-cost high-efficiency tandem cells.

A review of recent progress in heterogeneous silicon tandem solar cells

Science.gov (United States)

Yamaguchi, Masafumi; Lee, Kan-Hua; Araki, Kenji; Kojima, Nobuaki

2018-04-01

Silicon solar cells are the most established solar cell technology and are expected to dominate the market in the near future. As state-of-the-art silicon solar cells are approaching the Shockley-Queisser limit, stacking silicon solar cells with other photovoltaic materials to form multi-junction devices is an obvious pathway to further raise the efficiency. However, many challenges stand in the way of fully realizing the potential of silicon tandem solar cells because heterogeneously integrating silicon with other materials often degrades their qualities. Recently, above or near 30% silicon tandem solar cell has been demonstrated, showing the promise of achieving high-efficiency and low-cost solar cells via silicon tandem. This paper reviews the recent progress of integrating solar cell with other mainstream solar cell materials. The first part of this review focuses on the integration of silicon with III-V semiconductor solar cells, which is a long-researched topic since the emergence of III-V semiconductors. We will describe the main approaches—heteroepitaxy, wafer bonding and mechanical stacking—as well as other novel approaches. The second part introduces the integration of silicon with polycrystalline thin-film solar cells, mainly perovskites on silicon solar cells because of its rapid progress recently. We will also use an analytical model to compare the material qualities of different types of silicon tandem solar cells and project their practical efficiency limits.

The spontaneous formation of single-molecule junctions via terminal alkynes

International Nuclear Information System (INIS)

Pla-Vilanova, Pepita; Aragonès, Albert C; Sanz, Fausto; Darwish, Nadim; Diez-Perez, Ismael; Ciampi, Simone

2015-01-01

Herein, we report the spontaneous formation of single-molecule junctions via terminal alkyne contact groups. Self-assembled monolayers that form spontaneously from diluted solutions of 1, 4-diethynylbenzene (DEB) were used to build single-molecule contacts and assessed using the scanning tunneling microscopy-break junction technique (STM-BJ). The STM-BJ technique in both its dynamic and static approaches was used to characterize the lifetime (stability) and the conductivity of a single-DEB wire. It is demonstrated that single-molecule junctions form spontaneously with terminal alkynes and require no electrochemical control or chemical deprotonation. The alkyne anchoring group was compared against typical contact groups exploited in single-molecule studies, i.e. amine (benzenediamine) and thiol (benzendithiol) contact groups. The alkyne contact showed a conductance magnitude comparable to that observed with amine and thiol groups. The lifetime of the junctions formed from alkynes were only slightly less than that of thiols and greater than that observed for amines. These findings are important as (a) they extend the repertoire of chemical contacts used in single-molecule measurements to 1-alkynes, which are synthetically accessible and stable and (b) alkynes have a remarkable affinity toward silicon surfaces, hence opening the door for the study of single-molecule transport on a semiconducting electronic platform. (fast track communication)

Geometric photovoltaics applied to amorphous silicon thin film solar cells

Science.gov (United States)

Kirkpatrick, Timothy

Geometrically generalized analytical expressions for device transport are derived from first principles for a photovoltaic junction. Subsequently, conventional planar and unconventional coaxial and hemispherical photovoltaic architectures are applied to detail the device physics of the junction based on their respective geometry. For the conventional planar cell, the one-dimensional transport equations governing carrier dynamics are recovered. For the unconventional coaxial and hemispherical junction designs, new multi-dimensional transport equations are revealed. Physical effects such as carrier generation and recombination are compared for each cell architecture, providing insight as to how non-planar junctions may potentially enable greater energy conversion efficiencies. Numerical simulations are performed for arrays of vertically aligned, nanostructured coaxial and hemispherical amorphous silicon solar cells and results are compared to those from simulations performed for the standard planar junction. Results indicate that fundamental physical changes in the spatial dependence of the energy band profile across the intrinsic region of an amorphous silicon p-i-n junction manifest as an increase in recombination current for non-planar photovoltaic architectures. Despite an increase in recombination current, however, the coaxial architecture still appears to be able to surpass the efficiency predicted for the planar geometry, due to the geometry of the junction leading to a decoupling of optics and electronics.

Short circuit current changes in electron irradiated GaAlAs/GaAs solar cells

Science.gov (United States)

Walker, G. H.; Conway, E. J.

1978-01-01

Heteroface p-GaAlAs/p-GaAs/n-GaAs solar cells with junction depths of 0.8, 1.5, and 4 microns were irradiated with 1 MeV electrons. The short-circuit current for the 4 micron junction depth cells is significantly reduced by the electron irradiation. Reduction of the junction depth to 1.5 microns improves the electron radiation resistance of the cells while further reduction of the junction depth to 0.8 microns improves the stability of the cells even more. Primary degradation is in the blue region of the spectrum. Considerable recovery of lost response is obtained by annealing the cells at 200 C. Computer modeling shows that the degradation is caused primarily by a reduction in the minority carrier diffusion length in the p-GaAs.

Performance analysis of nanodisk and core/shell/shell-nanowire type III-Nitride heterojunction solar cell for efficient energy harvesting

Science.gov (United States)

Routray, S. R.; Lenka, T. R.

2017-11-01

Now-a-days III-Nitride nanowires with axial (nanodisk) and radial (core/shell/shell-nanowire) junctions are two unique and potential methods for solar energy harvesting adopted by worldwide researchers. In this paper, polarization behavior of GaN/InGaN/GaN junction and its effect on carrier dynamics of nanodisk and CSS-nanowire type solar cells are intensively studied and compared with its planar counterpart by numerical simulations using commercially available Victory TCAD. It is observed that CSS-NW with hexagonal geometrical shapes are robust to detrimental impact of polarization charges and could be good enough to accelerate carrier collection efficiency as compared to nanodisk and planar solar cells. This numerical study provides an innovative aspect of fundamental device physics with respect to polarization charges in CSS-NW and nanodisk type junction towards photovoltaic applications. The internal quantum efficiencies (IQE) are also discussed to evaluate carrier collection mechanisms and recombination losses in each type of junctions of solar cell. Finally, it is interesting to observe a maximum conversion efficiency of 6.46% with 91.6% fill factor from n-GaN/i-In0.1Ga0.9N/p-GaN CSS-nanowire solar cell with an optimized thickness of 180 nm InGaN layer under one Sun AM1.5 illumination.

Design Multilayer Antireflection Coatings for Terrestrial Solar Cells

Directory of Open Access Journals (Sweden)

Feng Zhan

2014-01-01

Full Text Available In order to analyze the influence of methods to design antireflection coatings (ARCs on reflectivity of broadband solar cells, we provide detailed analyses about the ARC coupled with a window layer and the refractive index dispersion effect of each layer. By multidimensional matrix data simulation, two methods were employed to measure the composite reflection of a SiO2/ZnS double-layer ARC within the spectral ranges of 300–870 nm (dual junction and 300–1850 nm (triple junction under AM1.5 solar radiation. A comparison study, between the results obtained from the commonly used weighted average reflectance method (WAR and that from the introduced effective average reflectance method (EAR, shows that the optimization of ARC by EAR method is convenient and feasible.

Diketopyrrolopyrrole Polymers for Organic Solar Cells.

Science.gov (United States)

Li, Weiwei; Hendriks, Koen H; Wienk, Martijn M; Janssen, René A J

2016-01-19

Conjugated polymers have been extensively studied for application in organic solar cells. In designing new polymers, particular attention has been given to tuning the absorption spectrum, molecular energy levels, crystallinity, and charge carrier mobility to enhance performance. As a result, the power conversion efficiencies (PCEs) of solar cells based on conjugated polymers as electron donor and fullerene derivatives as electron acceptor have exceeded 10% in single-junction and 11% in multijunction devices. Despite these efforts, it is notoriously difficult to establish thorough structure-property relationships that will be required to further optimize existing high-performance polymers to their intrinsic limits. In this Account, we highlight progress on the development and our understanding of diketopyrrolopyrrole (DPP) based conjugated polymers for polymer solar cells. The DPP moiety is strongly electron withdrawing and its polar nature enhances the tendency of DPP-based polymers to crystallize. As a result, DPP-based conjugated polymers often exhibit an advantageously broad and tunable optical absorption, up to 1000 nm, and high mobilities for holes and electrons, which can result in high photocurrents and good fill factors in solar cells. Here we focus on the structural modifications applied to DPP polymers and rationalize and explain the relationships between chemical structure and organic photovoltaic performance. The DPP polymers can be tuned via their aromatic substituents, their alkyl side chains, and the nature of the π-conjugated segment linking the units along the polymer chain. We show that these building blocks work together in determining the molecular conformation, the optical properties, the charge carrier mobility, and the solubility of the polymer. We identify the latter as a decisive parameter for DPP-based organic solar cells because it regulates the diameter of the semicrystalline DPP polymer fibers that form in the photovoltaic blends with

Single crystalline silicon solar cells with rib structure

Directory of Open Access Journals (Sweden)

Shuhei Yoshiba

2017-02-01

Full Text Available To improve the conversion efficiency of Si solar cells, we have developed a thin Si wafer-based solar cell that uses a rib structure. The open-circuit voltage of a solar cell is known to increase with deceasing wafer thickness if the cell is adequately passivated. However, it is not easy to handle very thin wafers because they are brittle and are subject to warpage. We fabricated a lattice-shaped rib structure on the rear side of a thin Si wafer to improve the wafer’s strength. A silicon nitride film was deposited on the Si wafer surface and patterned to form a mask to fabricate the lattice-shaped rib, and the wafer was then etched using KOH to reduce the thickness of the active area, except for the rib region. Using this structure in a Si heterojunction cell, we demonstrated that a high open-circuit voltage (VOC could be obtained by thinning the wafer without sacrificing its strength. A wafer with thickness of 30 μm was prepared easily using this structure. We then fabricated Si heterojunction solar cells using these rib wafers, and measured their implied VOC as a function of wafer thickness. The measured values were compared with device simulation results, and we found that the measured VOC agrees well with the simulated results. To optimize the rib and cell design, we also performed device simulations using various wafer thicknesses and rib dimensions.

Simulation and fabrication of SiO{sub 2}/graded-index TiO{sub 2} antireflection coating for triple-junction GaAs solar cells by using the hybrid deposition process

Energy Technology Data Exchange (ETDEWEB)

Liu, Jheng-Jie; Ho, Wen-Jeng, E-mail: wjho@ntut.edu.tw; Lee, Yi-Yu; Chang, Chia-Ming

2014-11-03

GaAs-based multi-junction solar cells (MJ-SCs) provide a wide solar-energy absorption-band (300–1800 nm), but designing and fabricating a broadband antireflection coating (ARC) are challenging. Because MJ-SCs are typically in a series that connects each subcell, the total output current is limited by the subcell that generates the smallest photocurrent. Thus, the ARC for MJ-SCs must be designed not only to obtain broadband absorption but also to minimize light reflection at the wavelength band of the current-limited cell. This study proposes a broadband SiO{sub 2}/graded-index TiO{sub 2} ARC for improving the current-limited subcell performance by using a hybrid deposition (e-beam evaporation and spin-on coating). A bottom TiO{sub 2} layer and a top SiO{sub 2} layer were deposited through e-beam evaporation, but the middle TiO{sub 2} layer was deposited using spin-on coating because the refractive index values of the TiO{sub 2} films could be tuned by applying the spin speed. Therefore, the graded-index TiO{sub 2} layers were easily obtained using a hybrid deposition method. In addition, a suitable reflectance spectrum of an ARC structure for a middle-cell current-limited triple-junction (3-J) GaAs solar cell was simulated using commercial optical software. The photovoltaic current–voltage and external quantum efficiency (EQE) were measured and compared. The resulting improvements of a short-circuit current of 32.4% and conversion efficiency of 31.8% were attributed to an enhanced EQE of 32.97% as well as a low broadband reflectance exhibited on the middle cell of the 3-J GaAs solar cell with a SiO{sub 2}/graded-index TiO{sub 2} ARC. - Highlights: • A broadband SiO{sub 2}/graded-index TiO{sub 2} ARC obtained by a hybrid deposition • A suitable triple-layer ARC was simulated by a commercial optical software. • Optical reflection, photovoltaic I–V, and EQE of 3-J GaAs solar cell were characterized. • An increased J{sub sc} of 32.4% and an increased �

Advanced interface modelling of n-Si/HNO3 doped graphene solar cells to identify pathways to high efficiency

Science.gov (United States)

Zhao, Jing; Ma, Fa-Jun; Ding, Ke; Zhang, Hao; Jie, Jiansheng; Ho-Baillie, Anita; Bremner, Stephen P.

2018-03-01

In graphene/silicon solar cells, it is crucial to understand the transport mechanism of the graphene/silicon interface to further improve power conversion efficiency. Until now, the transport mechanism has been predominantly simplified as an ideal Schottky junction. However, such an ideal Schottky contact is never realised experimentally. According to literature, doped graphene shows the properties of a semiconductor, therefore, it is physically more accurate to model graphene/silicon junction as a Heterojunction. In this work, HNO3-doped graphene/silicon solar cells were fabricated with the power conversion efficiency of 9.45%. Extensive characterization and first-principles calculations were carried out to establish an advanced technology computer-aided design (TCAD) model, where p-doped graphene forms a straddling heterojunction with the n-type silicon. In comparison with the simple Schottky junction models, our TCAD model paves the way for thorough investigation on the sensitivity of solar cell performance to graphene properties like electron affinity. According to the TCAD heterojunction model, the cell performance can be improved up to 22.5% after optimizations of the antireflection coatings and the rear structure, highlighting the great potentials for fabricating high efficiency graphene/silicon solar cells and other optoelectronic devices.

Behavior of tight-junction, adherens-junction and cell polarity proteins during HNF-4α-induced epithelial polarization

International Nuclear Information System (INIS)

Satohisa, Seiro; Chiba, Hideki; Osanai, Makoto; Ohno, Shigeo; Kojima, Takashi; Saito, Tsuyoshi; Sawada, Norimasa

2005-01-01

We previously reported that expression of tight-junction molecules occludin, claudin-6 and claudin-7, as well as establishment of epithelial polarity, was triggered in mouse F9 cells expressing hepatocyte nuclear factor (HNF)-4α [H. Chiba, T. Gotoh, T. Kojima, S. Satohisa, K. Kikuchi, M. Osanai, N. Sawada. Hepatocyte nuclear factor (HNF)-4α triggers formation of functional tight junctions and establishment of polarized epithelial morphology in F9 embryonal carcinoma cells, Exp. Cell Res. 286 (2003) 288-297]. Using these cells, we examined in the present study behavior of tight-junction, adherens-junction and cell polarity proteins and elucidated the molecular mechanism behind HNF-4α-initiated junction formation and epithelial polarization. We herein show that not only ZO-1 and ZO-2, but also ZO-3, junctional adhesion molecule (JAM)-B, JAM-C and cell polarity proteins PAR-3, PAR-6 and atypical protein kinase C (aPKC) accumulate at primordial adherens junctions in undifferentiated F9 cells. In contrast, CRB3, Pals1 and PATJ appeared to exhibit distinct subcellular localization in immature cells. Induced expression of HNF-4α led to translocation of these tight-junction and cell polarity proteins to beltlike tight junctions, where occludin, claudin-6 and claudin-7 were assembled, in differentiated cells. Interestingly, PAR-6, aPKC, CRB3 and Pals1, but not PAR-3 or PATJ, were also concentrated on the apical membranes in differentiated cells. These findings indicate that HNF-4α provokes not only expression of tight-junction adhesion molecules, but also modulation of subcellular distribution of junction and cell polarity proteins, resulting in junction formation and epithelial polarization

Formation and electronic properties of In2S3/Cu(In,Ga)Se2 junctions and related thin film solar cells

International Nuclear Information System (INIS)

Pistor, Paul

2009-01-01

In this work, thermally evaporated In 2 S 3 thin films have been used as buffer layers in Cu(In,Ga)Se 2 solar cells. The state of the art Cu(In,Ga)Se 2 solar cell with CdS buffer layer was the starting point for this work and the role of the buffer layer as well as alternative buffer layer concepts were introduced in the beginning, together with some theoretical considerations needed for the physical interpretation of solar cell parameters. High quality, crystalline In 2+x S 3 was successfully synthesised and used as a reference material for the structural characterisation of In 2 S 3 . Three modifications with tetragonal, cubic and trigonal symmetry were identified and characterised with X-ray diffraction (XRD) measurements in the temperature range from 31 C to 1040 C. A refinement by the Rietveld method was performed, extending the existing literature data on the structure of In 2 S 3 . Resulting In 2 S 3 thin films were stoichiometric and homogeneous with an indirect optical bandgap of (1.99±0.5) eV. The utilisation of crystalline, single phase source material and the development of appropriate buffer processing led to high efficiency solar cells. A key process for optimal device performance was post deposition annealing of the completed solar cells for 35 min. to 55 min. at a temperature of 200 C. Annealing was found to improve mainly the fill factor and open circuit voltage of devices with an In 2 S 3 buffer, independent of the atmosphere in which the annealing was carried out (e.g. in air or inert gas). The controlled and reproducible enhancement of the device performance during annealing allowed coherent analysis of the changes in the photo-generated charge carrier collection and the dominant recombination mechanism of the solar cell devices. Losses in the spectral response upon annealing observed at long wavelengths (700-1200 nm) were attributed to a reduction of the space charge region width at the In 2 S 3 /Cu(In,Ga)Se 2 junction. Prior to annealing, it

Analysis of novel silicon and III-V solar cells by simulation and experiment; Analyse neuartiger Silizium- und III-V-Solarzellen mittels Simulation und Experiment

Energy Technology Data Exchange (ETDEWEB)

Hermle, Martin

2008-11-27

This work presents various simulation studies of silicon and III-V solar cells. For standard silicon solar cells, one of the critical parameters to obtain good performance, is the rear side recombination velocity. The optical and electrical differences of the different cell structures were determined. The optical differences and the effective recombination velocity Sback of the different rear side structures for 1 Ohmcm material were extracted. Beside standard silicon solar cells, back junction silicon solar cells were investigated. Especially the influence of the front surface field and the electrical shading due to the rear side, was investigated. In the last two chapters, III-V solar cells were analysed. For the simulation of III-V multi-junction solar cells, the simulation of the tunneldiode is the basic prerequisite. In this work, the numerical calibration of an GaAs tunneldiode was achieved by using an non-local tunnel model. Using this model, it was possible to successfully simulate a III-V tandem solar cell. The last chapter deals with an optimization of the III-V 3-junction cell for space applications. Especially the influence of the GaAs middle cell was investigated. Due to structural changes, the end-of-life efficiency was drastically increased.

Solar-hydrogen generation and solar concentration (Conference Presentation)

NARCIS (Netherlands)

Sulima, Oleg V.; Chinello, Enrico; Conibeer, Gavin; Modestino, Miquel A.; Schüttauf, Jan-Willem; Lambelet, David; Delfino, Antonio; Domine, Didier; Faes, Antonin; Despeisse, Matthieu; Bailat, Julien; Psaltis, Demetri; Fernandez Rivas, David; Ballif, Christophe; Moser, Christophe

2016-01-01

We successfully demonstrated and reported the highest solar-to-hydrogen efficiency with crystalline silicon cells and Earth-abundant electrocatalysts under unconcentrated solar radiation. The combination of hetero-junction silicon cells and a 3D printed Platinum/Iridium-Oxide electrolyzer has been

Silicon solar cell technology state of the art and a proposed double sided cell

International Nuclear Information System (INIS)

Seddik, M.M.

1987-08-01

A review of the silicon technology state of the art is given. It had been found that single crystal silicon efficiency was limitd to ≥ 20%. The reason was identified to be due to the recombination current loss mechanisms. However, use of new technologies such as back-surface field, surface passivation, double anti-reflection coatings and back-surface illumination demonstrated to achieve higher efficiencies. Experiments were carried out to evaluate the effect of back surfaces illumination on the cell efficiency enhancement. It was found that for single cell, back-surface illumination contribute a 12% increase in efficiency whereas for double cell illumination (back-to-back cells) the improvement was 59% increase in efficiency. A V-shaped flat mirror reflector with optimum angle of 45 deg. to the plane of the cell from both sides achieved the ultimate efficiency performance. Finally, a proposed high current - high efficiency solar cell called ''Double Drift'' - Double Sided Illumination Cell'' was presented. The new structures were in the form of n + pn + or p + np + double junctions. The expected efficiency ranges 50-60% with proper material design, double anti-reflection coatings and V-shaped irregular plane mirror reflector illumination. (author). 43 refs, 4 figs, 7 tabs

Highly Efficient LiYF4:Yb(3+), Er(3+) Upconversion Single Crystal under Solar Cell Spectrum Excitation and Photovoltaic Application.

Science.gov (United States)

Chen, Xu; Xu, Wen; Song, Hongwei; Chen, Cong; Xia, Haiping; Zhu, Yongsheng; Zhou, Donglei; Cui, Shaobo; Dai, Qilin; Zhang, Jiazhong

2016-04-13

Luminescent upconversion is a promising way to harvest near-infrared (NIR) sunlight and transforms it into visible light that can be directly absorbed by active materials of solar cells and improve their power conversion efficiency (PCE). However, it is still a great challenge to effectively improve the PCE of solar cells with the assistance of upconversion. In this work, we demonstrate the application of the transparent LiYF4:Yb(3+), Er(3+) single crystal as an independent luminescent upconverter to improve the PCE of perovskite solar cells. The LiYF4:Yb(3+), Er(3+) single crystal is prepared by an improved Bridgman method, and its internal quantum efficiency approached to 5.72% under 6.2 W cm(-2) 980 nm excitation. The power-dependent upconversion luminescence indicated that under the excitation of simulated sunlight the (4)F(9/2)-(4)I(15/2) red emission originally results from the cooperation of a 1540 nm photon and a 980 nm photon. Furthermore, when the single crystal is placed in front of the perovskite solar cells, the PCE is enhanced by 7.9% under the irradiation of simulated sunlight by 7-8 solar constants. This work implies the upconverter not only can serve as proof of principle for improving PCE of solar cells but also is helpful to practical application.

Economic viability of thin-film tandem solar modules in the United States

Science.gov (United States)

Sofia, Sarah E.; Mailoa, Jonathan P.; Weiss, Dirk N.; Stanbery, Billy J.; Buonassisi, Tonio; Peters, I. Marius

2018-05-01

Tandem solar cells are more efficient but more expensive per unit area than established single-junction (SJ) solar cells. To understand when specific tandem architectures should be utilized, we evaluate the cost-effectiveness of different II-VI-based thin-film tandem solar cells and compare them to the SJ subcells. Levelized cost of electricity (LCOE) and energy yield are calculated for four technologies: industrial cadmium telluride and copper indium gallium selenide, and their hypothetical two-terminal (series-connected subcells) and four-terminal (electrically independent subcells) tandems, assuming record SJ quality subcells. Different climatic conditions and scales (residential and utility scale) are considered. We show that, for US residential systems with current balance-of-system costs, the four-terminal tandem has the lowest LCOE because of its superior energy yield, even though it has the highest US per watt (US W-1) module cost. For utility-scale systems, the lowest LCOE architecture is the cadmium telluride single junction, the lowest US W-1 module. The two-terminal tandem requires decreased subcell absorber costs to reach competitiveness over the four-terminal one.

Superthin Solar Cells Based on AIIIBV/Ge Heterostructures

Science.gov (United States)

Pakhanov, N. A.; Pchelyakov, O. P.; Vladimirov, V. M.

2017-11-01

A comparative analysis of the prospects of creating superthin, light-weight, and highly efficient solar cells based on AIIIBV/InGaAs and AIIIBV/Ge heterostructures is performed. Technological problems and prospects of each variant are discussed. A method of thinning of AIIIBV/Ge heterostructures with the use of an effective temporary carrier is proposed. The method allows the process to be performed almost with no risk of heterostructure fracture, thinning of the Ge junction down to several tens of micrometers (or even several micrometers), significant enhancement of the yield of good structures, and also convenient and reliable transfer of thinned solar cells to an arbitrary light and flexible substrate. Such a technology offers a possibility of creating high-efficiency thin and light solar cells for space vehicles on the basis of mass-produced AIIIBV/Ge heterostructures.

Ink jet assisted metallization for low cost flat plate solar cells

Science.gov (United States)

Teng, K. F.; Vest, R. W.

1987-01-01

Computer-controlled ink-jet-assisted metallization of the front surface of solar cells with metalorganic silver inks offers a maskless alternative method to conventional photolithography and screen printing. This method can provide low cost, fine resolution, reduced process complexity, avoidance of degradation of the p-n junction by firing at lower temperature, and uniform line film on rough surface of solar cells. The metallization process involves belt furnace firing and thermal spiking. With multilayer ink jet printing and firing, solar cells of about 5-6 percent efficiency without antireflection (AR) coating can be produced. With a titanium thin-film underlayer as an adhesion promoter, solar cells of average efficiency 8.08 percent without AR coating can be obtained. This efficiency value is approximately equal to that of thin-film solar cells of the same lot. Problems with regard to lower inorganic content of the inks and contact resistance are noted.

Correlation between the physical parameters of the i-nc-Si absorber layer grown by 27.12 MHz plasma with the nc-Si solar cell parameters

Science.gov (United States)

Das, Debajyoti; Mondal, Praloy

2017-09-01

Growth of highly conducting nanocrystalline silicon (nc-Si) thin films of optimum crystalline volume fraction, involving dominant crystallographic preferred orientation with simultaneous low fraction of microstructures at a low substrate temperature and high growth rate, is a challenging task for its promising utilization in nc-Si solar cells. Utilizing enhanced electron density and superior ion flux densities of the high frequency (∼27.12 MHz) SiH4 plasma, improved nc-Si films have been produced by simple optimization of H2-dilution, controlling the ion damage and enhancing supply of atomic-hydrogen onto the growing surface. Single junction nc-Si p-i-n solar cells have been prepared with i-nc-Si absorber layer and optimized. The physical parameters of the absorber layer have been systematically correlated to variations of the solar cell parameters. The preferred alignment of crystallites, its contribution to the low recombination losses for conduction of charge carriers along the vertical direction, its spectroscopic correlation with the dominant growth of ultra-nanocrystalline silicon (unc-Si) component and corresponding longer wavelength absorption, especially in the neighborhood of i/n-interface region recognize scientific and technological key issues that pave the ground for imminent advancement of multi-junction silicon solar cells.

Solution-grown organic single-crystalline p-n junctions with ambipolar charge transport.

Science.gov (United States)

Fan, Congcheng; Zoombelt, Arjan P; Jiang, Hao; Fu, Weifei; Wu, Jiake; Yuan, Wentao; Wang, Yong; Li, Hanying; Chen, Hongzheng; Bao, Zhenan

2013-10-25

Organic single-crystalline p-n junctions are grown from mixed solutions. First, C60 crystals (n-type) form and, subsequently, C8-BTBT crystals (p-type) nucleate heterogeneously on the C60 crystals. Both crystals continue to grow simultaneously into single-crystalline p-n junctions that exhibit ambipolar charge transport characteristics. This work provides a platform to study organic single-crystalline p-n junctions. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Crystal growth for high-efficiency silicon solar cells workshop: Summary

Science.gov (United States)

Dumas, K. A.

1985-01-01

The state of the art in the growth of silicon crystals for high-efficiency solar cells are reviewed, sheet requirements are defined, and furture areas of research are identified. Silicon sheet material characteristics that limit cell efficiencies and yields were described as well as the criteria for the ideal sheet-growth method. The device engineers wish list to the material engineer included: silicon sheet with long minority carrier lifetime that is uniform throughout the sheet, and which doesn't change during processing; and sheet material that stays flat throughout device processing, has uniform good mechanical strength, and is low cost. Impurities in silicon solar cells depreciate cell performance by reducing diffusion length and degrading junctions. The impurity behavior, degradation mechanisms, and variations in degradation threshold with diffusion length for silicon solar cells were described.

Computational analysis of the maximum power point for GaAs sub-cells in InGaP/GaAs/Ge triple-junction space solar cells

International Nuclear Information System (INIS)

Cappelletti, M A; Cédola, A P; Peltzer y Blancá, E L

2014-01-01

The radiation resistance in InGaP/GaAs/Ge triple-junction solar cells is limited by that of the middle GaAs sub-cell. In this work, the electrical performance degradation of different GaAs sub-cells under 1 MeV electron irradiation at fluences below 4 × 10 15 cm −2 has been analyzed by means of a computer simulation. The numerical simulations have been carried out using the one-dimensional device modeling program PC1D. The effects of the base and emitter carrier concentrations of the p- and n-type GaAs structures on the maximum power point have been researched using a radiative recombination lifetime, a damage constant for the minority carrier lifetime and carrier removal rate models. An analytical model has been proposed, which is useful to either determine the maximum exposure time or select the appropriate device in order to ensure that the electrical parameters of different GaAs sub-cells will have a satisfactory response to radiation since they will be kept above 80% with respect to the non-irradiated values. (paper)

Optimal Materials and Deposition Technique Lead to Cost-Effective Solar Cell with Best-Ever Conversion Efficiency (Fact Sheet)

Energy Technology Data Exchange (ETDEWEB)

2012-07-01

This fact sheet describes how the SJ3 solar cell was invented, explains how the technology works, and why it won an R&D 100 Award. Based on NREL and Solar Junction technology, the commercial SJ3 concentrator solar cell - with 43.5% conversion efficiency at 418 suns - uses a lattice-matched multijunction architecture that has near-term potential for cells with {approx}50% efficiency. Multijunction solar cells have higher conversion efficiencies than any other type of solar cell. But developers of utility-scale and space applications crave even better efficiencies at lower costs to be both cost-effective and able to meet the demand for power. The SJ3 multijunction cell, developed by Solar Junction with assistance from foundational technological advances by the National Renewable Energy Laboratory, has the highest efficiency to date - almost 2% absolute more than the current industry standard multijunction cell-yet at a comparable cost. So what did it take to create this cell having 43.5% efficiency at 418-sun concentration? A combination of materials with carefully designed properties, a manufacturing technique allowing precise control, and an optimized device design.

Room-temperature current blockade in atomically defined single-cluster junctions

Science.gov (United States)

Lovat, Giacomo; Choi, Bonnie; Paley, Daniel W.; Steigerwald, Michael L.; Venkataraman, Latha; Roy, Xavier

2017-11-01

Fabricating nanoscopic devices capable of manipulating and processing single units of charge is an essential step towards creating functional devices where quantum effects dominate transport characteristics. The archetypal single-electron transistor comprises a small conducting or semiconducting island separated from two metallic reservoirs by insulating barriers. By enabling the transfer of a well-defined number of charge carriers between the island and the reservoirs, such a device may enable discrete single-electron operations. Here, we describe a single-molecule junction comprising a redox-active, atomically precise cobalt chalcogenide cluster wired between two nanoscopic electrodes. We observe current blockade at room temperature in thousands of single-cluster junctions. Below a threshold voltage, charge transfer across the junction is suppressed. The device is turned on when the temporary occupation of the core states by a transiting carrier is energetically enabled, resulting in a sequential tunnelling process and an increase in current by a factor of ∼600. We perform in situ and ex situ cyclic voltammetry as well as density functional theory calculations to unveil a two-step process mediated by an orbital localized on the core of the cluster in which charge carriers reside before tunnelling to the collector reservoir. As the bias window of the junction is opened wide enough to include one of the cluster frontier orbitals, the current blockade is lifted and charge carriers can tunnel sequentially across the junction.

Optimisation of electronic interface properties of a-Si:H/c-Si hetero-junction solar cells by wet-chemical surface pre-treatment

Energy Technology Data Exchange (ETDEWEB)

Angermann, H. [Hahn-Meitner-Institut, Abt. Siliziumphotovoltaik, Kekulestrasse 5, D-12489 Berlin (Germany)], E-mail: angermann@hmi.de; Korte, L.; Rappich, J.; Conrad, E.; Sieber, I.; Schmidt, M. [Hahn-Meitner-Institut, Abt. Siliziumphotovoltaik, Kekulestrasse 5, D-12489 Berlin (Germany); Huebener, K.; Hauschild, J. [Freie Universitaet Berlin, FB Physik, Arnimallee 14, 14195 Berlin (Germany)

2008-08-30

The relation between structural imperfections at structured silicon surfaces, energetic distribution of interface state densities, recombination loss at a-Si:H/c-Si interfaces and solar cell characteristics have been intensively investigated using non-destructive, surface sensitive techniques, surface photovoltage (SPV) and photoluminescence (PL) measurements, atomic force microscopy (AFM) and electron microscopy (SEM). Sequences of wet-chemical oxidation and etching steps were optimised with respect to the etching behaviour of Si(111) pyramids. Special wet-chemical smoothing and oxide removal procedures for structured substrates were developed, in order to reduce the preparation-induced surface micro-roughness and density of electronically active defects. H-termination and passivation by wet-chemical oxides were used to inhibit surface contamination and native oxidation during the technological process. We achieved significantly lower micro-roughness, densities of surface states D{sub it}(E) and recombination loss at a-Si:H/c-Si interfaces on wafers with randomly distributed pyramids, compared to conventional pre-treatments. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H/c-Si/BSF/Al), the c-Si surface becomes part of the a-Si:H/c-Si interface, whose recombination activity determines cell performance. With textured substrates, the smoothening procedure results in a significant increase of short circuit current, fill factor and efficiency.

Optimisation of electronic interface properties of a-Si:H/c-Si hetero-junction solar cells by wet-chemical surface pre-treatment

International Nuclear Information System (INIS)

Angermann, H.; Korte, L.; Rappich, J.; Conrad, E.; Sieber, I.; Schmidt, M.; Huebener, K.; Hauschild, J.

2008-01-01

The relation between structural imperfections at structured silicon surfaces, energetic distribution of interface state densities, recombination loss at a-Si:H/c-Si interfaces and solar cell characteristics have been intensively investigated using non-destructive, surface sensitive techniques, surface photovoltage (SPV) and photoluminescence (PL) measurements, atomic force microscopy (AFM) and electron microscopy (SEM). Sequences of wet-chemical oxidation and etching steps were optimised with respect to the etching behaviour of Si(111) pyramids. Special wet-chemical smoothing and oxide removal procedures for structured substrates were developed, in order to reduce the preparation-induced surface micro-roughness and density of electronically active defects. H-termination and passivation by wet-chemical oxides were used to inhibit surface contamination and native oxidation during the technological process. We achieved significantly lower micro-roughness, densities of surface states D it (E) and recombination loss at a-Si:H/c-Si interfaces on wafers with randomly distributed pyramids, compared to conventional pre-treatments. For amorphous-crystalline hetero-junction solar cells (ZnO/a-Si:H/c-Si/BSF/Al), the c-Si surface becomes part of the a-Si:H/c-Si interface, whose recombination activity determines cell performance. With textured substrates, the smoothening procedure results in a significant increase of short circuit current, fill factor and efficiency

Vibrationally coupled electron transport through single-molecule junctions

Energy Technology Data Exchange (ETDEWEB)

Haertle, Rainer

2012-04-26

Single-molecule junctions are among the smallest electric circuits. They consist of a molecule that is bound to a left and a right electrode. With such a molecular nanocontact, the flow of electrical currents through a single molecule can be studied and controlled. Experiments on single-molecule junctions show that a single molecule carries electrical currents that can even be in the microampere regime. Thereby, a number of transport phenomena have been observed, such as, for example, diode- or transistor-like behavior, negative differential resistance and conductance switching. An objective of this field, which is commonly referred to as molecular electronics, is to relate these transport phenomena to the properties of the molecule in the contact. To this end, theoretical model calculations are employed, which facilitate an understanding of the underlying transport processes and mechanisms. Thereby, one has to take into account that molecules are flexible structures, which respond to a change of their charge state by a profound reorganization of their geometrical structure or may even dissociate. It is thus important to understand the interrelation between the vibrational degrees of freedom of a singlemolecule junction and the electrical current flowing through the contact. In this thesis, we investigate vibrational effects in electron transport through singlemolecule junctions. For these studies, we calculate and analyze transport characteristics of both generic and first-principles based model systems of a molecular contact. To this end, we employ a master equation and a nonequilibrium Green's function approach. Both methods are suitable to describe this nonequilibrium transport problem and treat the interactions of the tunneling electrons on the molecular bridge non-perturbatively. This is particularly important with respect to the vibrational degrees of freedom, which may strongly interact with the tunneling electrons. We show in detail that the resulting

Manufacture of ribbon and solar cells of material of semiconductor grade

International Nuclear Information System (INIS)

1980-01-01

A method is described of producing ribbon-like substantially monocrystalline bodies of silicon or other materials of semiconductor grade suitable for use in solar cells or other semiconductor devices. A tube of the material is made and a photovoltaic junction formed in it. The tube is then divided lengthwise into a number of ribbon-like bodies. The photovoltaic junction can be formed either by diffusion or by ion-implantation. (U.K.)

Analysis of bias voltage dependent spectral response in Ga0.51In0.49P/Ga0.99In0.01As/Ge triple junction solar cell

International Nuclear Information System (INIS)

Sogabe, Tomah; Ogura, Akio; Okada, Yoshitaka

2014-01-01

Spectral response measurement plays great role in characterizing solar cell device because it directly reflects the efficiency by which the device converts the sunlight into an electrical current. Based on the spectral response results, the short circuit current of each subcell can be quantitatively determined. Although spectral response dependence on wavelength, i.e., the well-known external quantum efficiency (EQE), has been widely used in characterizing multijunction solar cell and has been well interpreted, detailed analysis of spectral response dependence on bias voltage (SR −V bias ) has not been reported so far. In this work, we have performed experimental and numerical studies on the SR −V bias for Ga 0.51 In 0.49 P/Ga 0.99 In 0.01 As/Ge triple junction solar cell. Phenomenological description was given to clarify the mechanism of operation matching point variation in SR −V bias measurements. The profile of SR−V bias curve was explained in detail by solving the coupled two-diode current-voltage characteristic transcend formula for each subcell

Strategies for increasing the efficiency of heterojunction organic solar cells: material selection and device architecture.

Science.gov (United States)

Heremans, Paul; Cheyns, David; Rand, Barry P

2009-11-17

phosphorescent molecule, we demonstrate an increase in the exciton diffusion length of a polymer from 4 to 9 nm. If researchers can identify suitable phosphorescent dopants, this method could be employed with other materials. The carrier transport from the junction to the contacts is markedly different for a bulk heterojunction cell than for planar junction cells. Unlike for bulk heterojunction cells, the open-circuit voltage of planar-junction cells is independent of the contact work functions, as a consequence of the balance of drift and diffusion currents in these systems. This understanding helps to guide the development of new materials (particularly donor materials) that can further boost the efficiency of single-junction cells to 10%. With multijunction architectures, we expect that efficiencies of 12-16% could be attained, at which point organic photovoltaic cells could become an important renewable energy source.

Single Vs Mixed Organic Cation for Low Temperature Processed Perovskite Solar Cells

International Nuclear Information System (INIS)

Mahmud, Md Arafat; Elumalai, Naveen Kumar; Upama, Mushfika Baishakhi; Wang, Dian; Wright, Matthew; Chan, Kah Howe; Xu, Cheng; Haque, Faiazul; Uddin, Ashraf

2016-01-01

Highlights: • Low temperature processed ZnO based single & mixed organic cation perovskite device. • 37% higher PCE in mixed cation perovskite solar cells (PSCs) than single cation ones. • Mixed cation PSCs exhibit significantly reduced photocurrent hysteresis. • Mixed cation PSCs demonstrate three fold higher device stability than single cation PSCs. • Electronic properties are analyzed using Electrochemical Impedance Spectroscopy. - Abstract: The present work reports a comparative study between single and mixed organic cation based MAPbI 3 and MA 0.6 FA 0.4 PbI 3 perovskite devices fabricated in conjunction with low temperature processed (<150 °C) ZnO electron transport layers. MA 0.6 FA 0.4 PbI 3 perovskite devices demonstrate 37% higher power conversion efficiency compared to MAPbI 3 perovskite devices developed on the ZnO ETL. In addition, MA 0.6 FA 0.4 PbI 3 devices exhibit very low photocurrent hysteresis and they are three-fold more stable than conventional MAPbI 3 PSCs (perovskite solar cells). An in-depth analysis on the charge transport properties in both fresh and aged devices has been carried out using electrochemical impedance spectroscopy analysis to comprehend the enhanced device stability of the mixed perovskite devices developed on the ZnO ETL. The study also investigates into the interfacial charge transfer characteristics associated with the ZnO/mixed organic cation perovskite interface and concomitant influence on the inherent electronic properties.

Performance analysis of AlGaAs/GaAs tunnel junctions for ultra-high concentration photovoltaics

International Nuclear Information System (INIS)

García, I; Rey-Stolle, I; Algora, C

2012-01-01

An n ++ -GaAs/p ++ -AlGaAs tunnel junction with a peak current density of 10 100 A cm -2 is developed. This device is a tunnel junction for multijunction solar cells, grown lattice-matched on standard GaAs or Ge substrates, with the highest peak current density ever reported. The voltage drop for a current density equivalent to the operation of the multijunction solar cell up to 10 000 suns is below 5 mV. Trap-assisted tunnelling is proposed to be behind this performance, which cannot be justified by simple band-to-band tunnelling. The metal-organic vapour-phase epitaxy growth conditions, which are in the limits of the transport-limited regime, and the heavy tellurium doping levels are the proposed origins of the defects enabling trap-assisted tunnelling. The hypothesis of trap-assisted tunnelling is supported by the observed annealing behaviour of the tunnel junctions, which cannot be explained in terms of dopant diffusion or passivation. For the integration of these tunnel junctions into a triple-junction solar cell, AlGaAs barrier layers are introduced to suppress the formation of parasitic junctions, but this is found to significantly degrade the performance of the tunnel junctions. However, the annealed tunnel junctions with barrier layers still exhibit a peak current density higher than 2500 A cm -2 and a voltage drop at 10 000 suns of around 20 mV, which are excellent properties for tunnel junctions and mean they can serve as low-loss interconnections in multijunction solar cells working at ultra-high concentrations. (paper)

Evaluation of the Kinetic Property of Single-Molecule Junctions by Tunneling Current Measurements.

Science.gov (United States)

Harashima, Takanori; Hasegawa, Yusuke; Kiguchi, Manabu; Nishino, Tomoaki

2018-01-01

We investigated the formation and breaking of single-molecule junctions of two kinds of dithiol molecules by time-resolved tunneling current measurements in a metal nanogap. The resulting current trajectory was statistically analyzed to determine the single-molecule conductance and, more importantly, to reveal the kinetic property of the single-molecular junction. These results suggested that combining a measurement of the single-molecule conductance and statistical analysis is a promising method to uncover the kinetic properties of the single-molecule junction.

Evaluation of the Electronic Structure of Single-Molecule Junctions Based on Current-Voltage and Thermopower Measurements: Application to C60 Single-Molecule Junction.