WorldWideScience

Sample records for single-event current transient

  1. Research on generation mechanism of single event transient current generated in the semiconductor using ion accelerator

    Hirao, Toshio

    2007-01-01

    Single-event upset (SEU) is triggered when an amount of electric charges induced by energetic ion incidence exceeds a value known as a critical charge in a very short time period. Therefore, accurate evaluation of electric charge and understanding of basic mechanism of SEU are necessary for the improvement of SEU torrance of electronic devices. In this paper, the collected charges for the single event transient current induced on semiconductor by heavy ion microbeams, and application to use microbeam for single event studies are presented. (author)

  2. Modeling of Single Event Transients With Dual Double-Exponential Current Sources: Implications for Logic Cell Characterization

    Black, Dolores A.; Robinson, William H.; Wilcox, Ian Z.; Limbrick, Daniel B.; Black, Jeffrey D.

    2015-08-01

    Single event effects (SEE) are a reliability concern for modern microelectronics. Bit corruptions can be caused by single event upsets (SEUs) in the storage cells or by sampling single event transients (SETs) from a logic path. An accurate prediction of soft error susceptibility from SETs requires good models to convert collected charge into compact descriptions of the current injection process. This paper describes a simple, yet effective, method to model the current waveform resulting from a charge collection event for SET circuit simulations. The model uses two double-exponential current sources in parallel, and the results illustrate why a conventional model based on one double-exponential source can be incomplete. A small set of logic cells with varying input conditions, drive strength, and output loading are simulated to extract the parameters for the dual double-exponential current sources. The parameters are based upon both the node capacitance and the restoring current (i.e., drive strength) of the logic cell.

  3. Single-event transients (SET) in analog circuits

    Chen Panxun; Zhou Kaiming

    2006-01-01

    A new phenomenon of single- event upset is introduced. The transient signal is produced in the output of analog circuits after a heavy ion strikes. The transient upset can influence the circuit connected with the output of analog circuits. For example, the output of operational amplifier can be connected with the input of a digital counter, and the pulse of sufficiently high transient output induced by an ion can increase counts of the counter. On the other hand, the transient voltage signal at the output of analog circuits can change the stage of other circuits. (authors)

  4. Parasitic bipolar amplification in a single event transient and its temperature dependence

    Liu Zheng; Chen Shu-Ming; Chen Jian-Jun; Qin Jun-Rui; Liu Rong-Rong

    2012-01-01

    Using three-dimensional technology computer-aided design (TCAD) simulation, parasitic bipolar amplification in a single event transient (SET) current of a single transistor and its temperature dependence are studied. We quantify the contributions of different current components in a SET current pulse, and it is found that the proportion of parasitic bipolar amplification in total collected charge is about 30% in both 130-nm and 90-nm technologies. The temperature dependence of parasitic bipolar amplification and the mechanism of the SET pulse are also investigated and quantified. The results show that the proportion of charge induced by parasitic bipolar increases with rising temperature, which illustrates that the parasitic bipolar amplification plays an important role in the charge collection of a single transistor

  5. An analog cell to detect single event transients in voltage references

    Franco, F.J., E-mail: fjfranco@fis.ucm.es [Departamento de Física Aplicada III, Facultad de Físicas, Universidad Complutense de Madrid (UCM), 28040 Madrid (Spain); Palomar, C. [Departamento de Física Aplicada III, Facultad de Físicas, Universidad Complutense de Madrid (UCM), 28040 Madrid (Spain); Izquierdo, J.G. [Centro de Láseres Ultrarrápidos, Facultad de Químicas, Universidad Complutense de Madrid (UCM), 28040 Madrid (Spain); Agapito, J.A. [Departamento de Física Aplicada III, Facultad de Físicas, Universidad Complutense de Madrid (UCM), 28040 Madrid (Spain)

    2015-01-11

    A reliable voltage reference is mandatory in mixed-signal systems. However, this family of components can undergo very long single event transients when operating in radiation environments such as space and nuclear facilities due to the impact of heavy ions. The purpose of the present paper is to demonstrate how a simple cell can be used to detect these transients. The cell was implemented with typical COTS components and its behavior was verified by SPICE simulations and in a laser facility. Different applications of the cell are explored as well.

  6. Line-edge roughness induced single event transient variation in SOI FinFETs

    Wu Weikang; An Xia; Jiang Xiaobo; Chen Yehua; Liu Jingjing; Zhang Xing; Huang Ru

    2015-01-01

    The impact of process induced variation on the response of SOI FinFET to heavy ion irradiation is studied through 3-D TCAD simulation for the first time. When FinFET biased at OFF state configuration (V gs = 0, V ds = V dd ) is struck by a heavy ion, the drain collects ionizing charges under the electric field and a current pulse (single event transient, SET) is consequently formed. The results reveal that with the presence of line-edge roughness (LER), which is one of the major variation sources in nano-scale FinFETs, the device-to-device variation in terms of SET is observed. In this study, three types of LER are considered: type A has symmetric fin edges, type B has irrelevant fin edges and type C has parallel fin edges. The results show that type A devices have the largest SET variation while type C devices have the smallest variation. Further, the impact of the two main LER parameters, correlation length and root mean square amplitude, on SET variation is discussed as well. The results indicate that variation may be a concern in radiation effects with the down scaling of feature size. (paper)

  7. Soft error rate analysis methodology of multi-Pulse-single-event transients

    Zhou Bin; Huo Mingxue; Xiao Liyi

    2012-01-01

    As transistor feature size scales down, soft errors in combinational logic because of high-energy particle radiation is gaining more and more concerns. In this paper, a combinational logic soft error analysis methodology considering multi-pulse-single-event transients (MPSETs) and re-convergence with multi transient pulses is proposed. In the proposed approach, the voltage pulse produced at the standard cell output is approximated by a triangle waveform, and characterized by three parameters: pulse width, the transition time of the first edge, and the transition time of the second edge. As for the pulse with the amplitude being smaller than the supply voltage, the edge extension technique is proposed. Moreover, an efficient electrical masking model comprehensively considering transition time, delay, width and amplitude is proposed, and an approach using the transition times of two edges and pulse width to compute the amplitude of pulse is proposed. Finally, our proposed firstly-independently-propagating-secondly-mutually-interacting (FIP-SMI) is used to deal with more practical re-convergence gate with multi transient pulses. As for MPSETs, a random generation model of MPSETs is exploratively proposed. Compared to the estimates obtained using circuit level simulations by HSpice, our proposed soft error rate analysis algorithm has 10% errors in SER estimation with speed up of 300 when the single-pulse-single-event transient (SPSET) is considered. We have also demonstrated the runtime and SER decrease with the increment of P0 using designs from the ISCAS-85 benchmarks. (authors)

  8. New insight into the parasitic bipolar amplification effect in single event transient production

    Chen Jian-Jun; Chen Shu-Ming; Liang Bin; Deng Ke-Feng

    2012-01-01

    In this paper, a new method is proposed to study the mechanism of charge collection in single event transient (SET) production in 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect (bipolar effect) in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the substrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P + -well layer and can be removed by a buried SO 2 layer. (condensed matter: structural, mechanical, and thermal properties)

  9. The dual role of multiple-transistor charge sharing collection in single-event transients

    Guo Yang; Chen Jian-Jun; He Yi-Bai; Liang Bin; Liu Bi-Wei

    2013-01-01

    As technologies scale down in size, multiple-transistors being affected by a single ion has become a universal phenomenon, and some new effects are present in single event transients (SETs) due to the charge sharing collection of the adjacent multiple-transistors. In this paper, not only the off-state p-channel metal—oxide semiconductor field-effect transistor (PMOS FET), but also the on-state PMOS is struck by a heavy-ion in the two-transistor inverter chain, due to the charge sharing collection and the electrical interaction. The SET induced by striking the off-state PMOS is efficiently mitigated by the pulse quenching effect, but the SET induced by striking the on-state PMOS becomes dominant. It is indicated in this study that in the advanced technologies, the SET will no longer just be induced by an ion striking the off-state transistor, and the SET sensitive region will no longer just surround the off-state transistor either, as it is in the older technologies. We also discuss this issue in a three-transistor inverter in depth, and the study illustrates that the three-transistor inverter is still a better replacement for spaceborne integrated circuit design in advanced technologies. (condensed matter: structural, mechanical, and thermal properties)

  10. Investigations on heavy ion induced Single-Event Transients (SETs) in highly-scaled FinFETs

    Gaillardin, M., E-mail: marc.gaillardin@cea.fr [CEA, DAM, DIF, F-91297 Arpajon (France); Raine, M.; Paillet, P. [CEA, DAM, DIF, F-91297 Arpajon (France); Adell, P.C. [Jet Propulsion Laboratory, Pasadena, CA 91101 (United States); Girard, S. [Université de Saint-Etienne, Laboratoire H. Curien, UMR-5516, 42000 Saint-Etienne (France); Duhamel, O. [CEA, DAM, DIF, F-91297 Arpajon (France); Andrieu, F.; Barraud, S.; Faynot, O. [CEA, LETI-Minatec, 17 avenue des Martyrs, 38000 Grenoble (France)

    2015-12-15

    We investigate Single-Event Transients (SET) in different designs of multiple-gate devices made of FinFETs with various geometries. Heavy ion experimental results are explained by using a thorough charge collection analysis of fast transients measured on dedicated test structures. Multi-level simulations are performed to get new insights into the charge collection mechanisms in multiple-gate devices. Implications for multiple-gate device design hardening are finally discussed.

  11. Current interruption transients calculation

    Peelo, David F

    2014-01-01

    Provides an original, detailed and practical description of current interruption transients, origins, and the circuits involved, and how they can be calculated Current Interruption Transients Calculationis a comprehensive resource for the understanding, calculation and analysis of the transient recovery voltages (TRVs) and related re-ignition or re-striking transients associated with fault current interruption and the switching of inductive and capacitive load currents in circuits. This book provides an original, detailed and practical description of current interruption transients, origins,

  12. Effects of drain-wall in mitigating N-hit single event transient via 45 nm CMOS process

    Xu, X Y; Tang, M H; Xiao, Y G; Yan, S A; Zhang, W L; Li, Z; Xiong, Y; Zhao, W; Guo, H X

    2015-01-01

    A three-dimensional (3D) technology computer-aided design (TCAD) simulation in a novel layout technique for N-hit single event transient (SET) mitigation based on drain-wall layout technique is proposed. Numerical simulations of both single-device and mixed-mode show that the proposed layout technique designed with 45 nm CMOS process can efficiently reduce not only charge collection but also SET pulse widths (W SET ). What is more, simulations show that impacts caused by part of ion-incidents can be shielded with this novel layout technique. When compared with conventional layout technique and guard drain layout technique, we find that the proposed novel layout technique can provide the best benefit of SET mitigation with a small sacrifice in effective area. (paper)

  13. Current Single Event Effects Results for Candidate Spacecraft Electronics for NASA

    OBryan, Martha V.; Seidleck, Christina M.; Carts, Martin A.; LaBel, Kenneth A.; Marshall, Cheryl J.; Reed, Robert A.; Sanders, Anthony B.; Hawkins, Donald K.; Cox, Stephen R.; Kniffin, Scott D.

    2004-01-01

    We present data on the vulnerability of a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects. Devices tested include digital, analog, linear bipolar, and hybrid devices, among others.

  14. Comparison Elements on STG DICE cell for Content-Addressable Memory and Simulation of Single-Event Transients

    V. Ya. Stenin

    2017-06-01

    Full Text Available Comparison elements on base the STG DICE cell and the logical element “Exclusive OR” for a content-addressable memory were designed and simulated. The comparison element contains two identical joint groups of transistors that are spaced on the chip by the distance of four micrometers, so the loss of data in STG DICE cell practically excluded. On the characteristics of the new 65-nm CMOS comparison element, we predict the hardness of these item to single event rate (SER more to hundred times compared to elements on 6-transistors cells and the standard DICE cell with distances 0.5-0.6 μm between mutually sensitive nodes.

  15. Comparative research on “high currents” induced by single event latch-up and transient-induced latch-up

    Chen Rui; Han Jian-Wei; Zheng Han-Sheng; Yu Yong-Tao; Shangguang Shi-Peng; Feng Guo-Qiang; Ma Ying-Qi

    2015-01-01

    By using the pulsed laser single event effect facility and electro-static discharge (ESD) test system, the characteristics of the “high current”, relation with external stimulus and relevance to impacted modes of single event latch-up (SEL) and transient-induced latch-up (TLU) are studied, respectively, for a 12-bit complementary metal–oxide semiconductor (CMOS) analog-to-digital converter. Furthermore, the sameness and difference in physical mechanism between “high current” induced by SEL and that by TLU are disclosed in this paper. The results show that the minority carrier diffusion in the PNPN structure of the CMOS device which initiates the active parasitic NPN and PNP transistors is the common reason for the “high current” induced by SEL and for that by TLU. However, for SEL, the minority carrier diffusion is induced by the ionizing radiation, and an underdamped sinusoidal voltage on the supply node (the ground node) is the cause of the minority carrier diffusion for TLU. (paper)

  16. Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process

    Yu Jun-Ting; Chen Shu-Ming; Chen Jian-Jun; Huang Peng-Cheng; Song Rui-Qiang

    2016-01-01

    Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor (FinFET) technology. However, the studies of charge sharing induced single-event transient (SET) pulse quenching with bulk FinFET are reported seldomly. Using three-dimensional technology computer aided design (3DTCAD) mixed-mode simulations, the effects of supply voltage and body-biasing on SET pulse quenching are investigated for the first time in bulk FinFET process. Research results indicate that due to an enhanced charge sharing effect, the propagating SET pulse width decreases with reducing supply voltage. Moreover, compared with reverse body-biasing (RBB), the circuit with forward body-biasing (FBB) is vulnerable to charge sharing and can effectively mitigate the propagating SET pulse width up to 53% at least. This can provide guidance for radiation-hardened bulk FinFET technology especially in low power and high performance applications. (paper)

  17. Study of transient current induced by heavy-ion microbeams in Si and GaAs

    Hirao, Toshio; Nashiyama, Isamu; Kamiya, Tomihiro; Suda, Tamotu [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan). Takasaki Radiation Chemistry Research Establishment

    1997-03-01

    Heavy-ion microbeams were applied to the study of mechanism of single event upset (SEU). Transient current induced in p{sup +}n junction diodes by strike of heavy ion microbeam were measured by using a high-speed digitizing sampling system. (author)

  18. Transient global amnesia: current perspectives

    Spiegel DR

    2017-10-01

    Full Text Available David R Spiegel, Justin Smith, Ryan R Wade, Nithya Cherukuru, Aneel Ursani, Yuliya Dobruskina, Taylor Crist, Robert F Busch, Rahim M Dhanani, Nicholas Dreyer Department of Psychiatry and Behavioral Sciences, Eastern Virginia Medical School, Norfolk, VA, USA Abstract: Transient global amnesia (TGA is a clinical syndrome characterized by the sudden onset of an extraordinarily large reduction of anterograde and a somewhat milder reduction of retrograde episodic long-term memory. Additionally, executive functions are described as diminished. Although it is suggested that various factors, such as migraine, focal ischemia, venous flow abnormalities, and epileptic phenomena, are involved in the pathophysiology and differential diagnosis of TGA, the factors triggering the emergence of these lesions are still elusive. Recent data suggest that the vulnerability of CA1 neurons to metabolic stress plays a pivotal part in the pathophysiological cascade, leading to an impairment of hippocampal function during TGA. In this review, we discuss clinical aspects, new imaging findings, and recent clinical–epidemiological data with regard to the phenotype, functional anatomy, and putative cellular mechanisms of TGA. Keywords: transient global amnesia, vascular, migraines, psychiatric

  19. Electric fields associated with transient surface currents

    McAllister, Iain Wilson

    1992-01-01

    The boundary condition to be fulfilled by the potential functions associated with a transient surface current is derived and expressed in terms of generalized orthogonal coordinates. From the analysis, it can be deduced that the use of the method of separation of variables is restricted to three ...

  20. Equivalent properties of single event burnout induced by different sources

    Yang Shiyu; Cao Zhou; Da Daoan; Xue Yuxiong

    2009-01-01

    The experimental results of single event burnout induced by heavy ions and 252 Cf fission fragments in power MOSFET devices have been investigated. It is concluded that the characteristics of single event burnout induced by 252 Cf fission fragments is consistent to that in heavy ions. The power MOSFET in the 'turn-off' state is more susceptible to single event burnout than it is in the 'turn-on' state. The thresholds of the drain-source voltage for single event burnout induced by 173 MeV bromine ions and 252 Cf fission fragments are close to each other, and the burnout cross section is sensitive to variation of the drain-source voltage above the threshold of single event burnout. In addition, the current waveforms of single event burnouts induced by different sources are similar. Different power MOSFET devices may have different probabilities for the occurrence of single event burnout. (authors)

  1. Single event phenomena in atmospheric neutron environments

    Gossett, C.A.; Hughlock, B.W.; Katoozi, M.; LaRue, G.S.; Wender, S.A.

    1993-01-01

    As integrated circuit technology achieves higher density through smaller feature sizes and as the airplane manufacturing industry integrates more sophisticated electronic components into the design of new aircraft, it has become increasingly important to evaluate the contribution of single event effects, primarily Single Event Upset (SEU), to the safety and reliability of commercial aircraft. In contrast to the effects of radiation on electronic systems in space applications for which protons and heavy ions are of major concern, in commercial aircraft applications the interactions of high energy neutrons are the dominant cause of single event effects. These high energy neutrons are produced by the interaction of solar and galactic cosmic rays, principally protons and heavy ions, in the upper atmosphere. This paper will describe direct experimental measurements of neutron-induced Single Event Effect (SEE) rates in commercial high density static random access memories in a neutron environment characteristic of that at commercial airplane altitudes. The first experimental measurements testing current models for neutron-silicon burst generation rates will be presented, as well as measurements of charge collection in silicon test structures as a function of neutron energy. These are the first laboratory SEE and charge collection measurements using a particle beam having a continuum energy spectrum and with a shape nearly identical to that observed during flight

  2. Experimental study of single event burnout and single event gate rupture in power MOSFETs and IGBT

    Tang Benqi; Wang Yanping; Geng Bin

    2001-01-01

    An experimental study was carried out to determine the single event burnout and single event gate rupture sensitivities in power MOSFETs and IGBT which were exposed to heavy ions from 252 Cf source. The test method, test results, a description of observed burnout current waveforms and a discussion of a possible failure mechanism were presented. Current measurements have been performed with a specially designed circuit. The test results include the observed dependence upon applied drain or gate to source bias and versus with external capacitors and limited resistors

  3. Future challenges in single event effects for advanced CMOS technologies

    Guo Hongxia; Wang Wei; Luo Yinhong; Zhao Wen; Guo Xiaoqiang; Zhang Keying

    2010-01-01

    SEE have became a substantial Achilles heel for the reliability of space-based advanced CMOS technologies with features size downscaling. Future space and defense systems require identification and understanding of single event effects to develop hardening approaches for advanced technologies, including changes in device geometry and materials affect energy deposition, charge collection,circuit upset, parametric degradation devices. Topics covered include the impact of technology scaling on radiation response, including single event transients in high speed digital circuits, evidence for single event effects caused by proton direct ionization, and the impact for SEU induced by particle energy effects and indirect ionization. The single event effects in CMOS replacement technologies are introduced briefly. (authors)

  4. Investigation of single event latchup

    Xue Yuxiong; Yang Shengsheng; Cao Zhou; Ba Dedong; An Heng; Chen Luojing; Guo Gang

    2012-01-01

    Radiation effects on avionics microelectronics are important reliability issues for many space applications. In particular, single-event latchup (SEL) phenomenon is a major threat to CMOS integrated circuits in space systems. To effectively circumvent the failure, it is important to know the behavior of such devices during latchup. In this paper, the mechanisms for SEL in CMOS devices are investigated. Several microelectronic devices used in avionics are tested using heavy ion beams, pulsed laser and 252 Cf source. Based on the SEL test results, SEL-hardening and monitoring methods for preventing SEL from the systems design level are proposed. (authors)

  5. Single event upset test programs

    Russen, L.C.

    1984-11-01

    It has been shown that the heavy ions in cosmic rays can give rise to single event upsets in VLSI random access memory devices (RAMs). Details are given of the programs written to test 1K, 4K, 16K and 64K memories during their irradiation with heavy charged ions, in order to simulate the effects of cosmic rays in space. The test equipment, which is used to load the memory device to be tested with a known bit pattern, and subsequently interrogate it for upsets, or ''flips'', is fully described. (author)

  6. Crystal ball single event display

    Grosnick, D.; Gibson, A.; Allgower, C.; Alyea, J.; Argonne National Lab., IL

    1997-01-01

    The Single Event Display (SED) is a routine that is designed to provide information graphically about a triggered event within the Crystal Ball. The SED is written entirely in FORTRAN and uses the CERN-based HICZ graphing package. The primary display shows the amount of energy deposited in each of the NaI crystals on a Mercator-like projection of the crystals. Ten different shades and colors correspond to varying amounts of energy deposited within a crystal. Information about energy clusters is displayed on the crystal map by outlining in red the thirteen (or twelve) crystals contained within a cluster and assigning each cluster a number. Additional information about energy clusters is provided in a series of boxes containing useful data about the energy distribution among the crystals within the cluster. Other information shown on the event display include the event trigger type and data about π o 's and η's formed from pairs of clusters as found by the analyzer. A description of the major features is given, along with some information on how to install the SED into the analyzer

  7. Transient digitizer with displacement current samplers

    McEwan, Thomas E.

    1996-01-01

    A low component count, high speed sample gate, and digitizer architecture using the sample gates is based on use of a signal transmission line, a strobe transmission line and a plurality of sample gates connected to the sample transmission line at a plurality of positions. The sample gates include a strobe pickoff structure near the strobe transmission line which generates a charge displacement current in response to propagation of the strobe signal on the strobe transmission line sufficient to trigger the sample gate. The sample gate comprises a two-diode sampling bridge and is connected to a meandered signal transmission line at one end and to a charge-holding cap at the other. The common cathodes are reverse biased. A voltage step is propagated down the strobe transmission line. As the step propagates past a capacitive pickoff, displacement current i=c(dv/dT), flows into the cathodes, driving the bridge into conduction and thereby charging the charge-holding capacitor to a value related to the signal. A charge amplifier converts the charge on the charge-holding capacitor to an output voltage. The sampler is mounted on a printed circuit board, and the sample transmission line and strobe transmission line comprise coplanar microstrips formed on a surface of the substrate. Also, the strobe pickoff structure may comprise a planar pad adjacent the strobe transmission line on the printed circuit board.

  8. Discussions On Worst-Case Test Condition For Single Event Burnout

    Liu, Sandra; Zafrani, Max; Sherman, Phillip

    2011-10-01

    This paper discusses the failure characteristics of single- event burnout (SEB) on power MOSFETs based on analyzing the quasi-stationary avalanche simulation curves. The analyses show the worst-case test condition for SEB would be using the ion that has the highest mass that would result in the highest transient current due to charge deposition and displacement damage. The analyses also show it is possible to build power MOSFETs that will not exhibit SEB even when tested with the heaviest ion, which have been verified by heavy ion test data on SEB sensitive and SEB immune devices.

  9. The single-event effect evaluation technology for nano integrated circuits

    Zheng Hongchao; Zhao Yuanfu; Yue Suge; Fan Long; Du Shougang; Chen Maoxin; Yu Chunqing

    2015-01-01

    Single-event effects of nano scale integrated circuits are investigated. Evaluation methods for single-event transients, single-event upsets, and single-event functional interrupts in nano circuits are summarized and classified in detail. The difficulties in SEE testing are discussed as well as the development direction of test technology, with emphasis placed on the experimental evaluation of a nano circuit under heavy ion, proton, and laser irradiation. The conclusions in this paper are based on many years of testing at accelerator facilities and our present understanding of the mechanisms for SEEs, which have been well verified experimentally. (paper)

  10. Single-event effect ground test issues

    Koga, R.

    1996-01-01

    Ground-based single event effect (SEE) testing of microcircuits permits characterization of device susceptibility to various radiation induced disturbances, including: (1) single event upset (SEU) and single event latchup (SEL) in digital microcircuits; (2) single event gate rupture (SEGR), and single event burnout (SEB) in power transistors; and (3) bit errors in photonic devices. These characterizations can then be used to generate predictions of device performance in the space radiation environment. This paper provides a general overview of ground-based SEE testing and examines in critical depth several underlying conceptual constructs relevant to the conduct of such tests and to the proper interpretation of results. These more traditional issues are contrasted with emerging concerns related to the testing of modern, advanced microcircuits

  11. Transient and steady-state currents in epoxy resin

    Guillermin, Christophe; Rain, Pascal; Rowe, Stephen W

    2006-01-01

    Charging and discharging currents have been measured in a diglycidyl ether of bisphenol-A epoxy resin with and without silica fillers, below and above its glass transition temperature T g = 65 deg. C. Both transient and steady-state current densities have been analysed. The average applied fields ranged from 3 to 35 kV mm -1 with a sample thickness of 0.5 mm. Above T g , transient currents suggested a phenomenon of charge injection forming trapped space charges even at low fields. Steady-state currents confirmed that the behaviour was not Ohmic and suggested Schottky-type injection. Below T g , the current is not controlled by the metal-dielectric interface but by the conduction in the volume: the current is Ohmic at low fields and both transient and steady-state currents suggest a phenomenon of space-charge limited currents at high fields. The field threshold is similar in the filler-free and the filled resin. Values in the range 12-17 kV mm -1 have been measured

  12. Transient and steady-state currents in epoxy resin

    Guillermin, Christophe [Schneider Electric Industries S.A.S., 37 quai Paul-Louis Merlin, 38050 Grenoble Cedex 9 (France); Rain, Pascal [Laboratoire d' Electrostatique et de Materiaux Dielectriques (LEMD), CNRS, 25 avenue des Martyrs, 38042 Grenoble Cedex 9 (France); Rowe, Stephen W [Schneider Electric Industries S.A.S., 37 quai Paul-Louis Merlin, 38050 Grenoble Cedex 9 (France)

    2006-02-07

    Charging and discharging currents have been measured in a diglycidyl ether of bisphenol-A epoxy resin with and without silica fillers, below and above its glass transition temperature T{sub g} = 65 deg. C. Both transient and steady-state current densities have been analysed. The average applied fields ranged from 3 to 35 kV mm{sup -1} with a sample thickness of 0.5 mm. Above T{sub g}, transient currents suggested a phenomenon of charge injection forming trapped space charges even at low fields. Steady-state currents confirmed that the behaviour was not Ohmic and suggested Schottky-type injection. Below T{sub g}, the current is not controlled by the metal-dielectric interface but by the conduction in the volume: the current is Ohmic at low fields and both transient and steady-state currents suggest a phenomenon of space-charge limited currents at high fields. The field threshold is similar in the filler-free and the filled resin. Values in the range 12-17 kV mm{sup -1} have been measured.

  13. Current capabilities of transient two-phase flow instruments

    Solbrig, C.W.; Kondic, N.N.

    1979-01-01

    The measurement of two phase flow phenomena in transient conditions representative of a Loss-of-Coolant Accident requires the use of sophisticated instruments and the further development of other instruments. Measurements made in large size pipes are often flow regime dependent. The flow regimes encountered depend upon the system geometry, transient effects, heat transfer, etc. The geometries in which these measurements must be made, the instruments which are currently used, new instruments being developed, the facilities used to calibrate these instruments, and the improvements which must be made to measurement capabilities are described

  14. Transient currents in a molecular photo-diode

    Petrov, E. G.; Leonov, V. O.; May, V.; Hänggi, P.

    2012-01-01

    Light-induced charge transmission through a molecular junction (molecular diode) is studied in the framework of a HOMO-LUMO model and in using a kinetic description. Expressions are presented for the sequential (hopping) and direct (tunneling) transient current components together with kinetic equations governing the time-dependent populations of the neutral and charged molecular states which participate in the current formation. Resonant and off-resonant charge transmission processes are ana...

  15. Analyzing Single-Event Gate Ruptures In Power MOSFET's

    Zoutendyk, John A.

    1993-01-01

    Susceptibilities of power metal-oxide/semiconductor field-effect transistors (MOSFET's) to single-event gate ruptures analyzed by exposing devices to beams of energetic bromine ions while applying appropriate bias voltages to source, gate, and drain terminals and measuring current flowing into or out of each terminal.

  16. Heavy ion microbeam system for study of single event effects

    Kamiya, Tomihiro; Utsunomiya, Nobuhiro; Minehara, Eiichi; Tanaka, Ryuichi; Ohmura, Miyoshi; Kohno, Kazuhiro; Iwamoto, Eiji.

    1992-01-01

    A high-energy heavy ion microbeam system has been developed and installed on a beam line of a 3 MV tandem electrostatic accelerator mainly for analysis of basic mechanism of single event upset (SEU) of semiconductor devices in spacecraft. The SEU is now the most serious problem for highly reliable spacecraft electronics system with long space mission. However, the mechanism has not been understood on the basis of microscopic process of SEU. The SEU phenomena depends not only upon hitting particles, but also upon the hit position on the microcircuit. To observe the transient charge pulse from a SEU, a single ion particle must hit exactly the desired position of the microcircuit. Such an experiment requires the microbeam spot size within 1 μm, the beam positioning accuracy within ±1 μm, and single ion hitting. The microbeam system has been designed to meet the above technical requirements. The system is equipped with two lens systems: one to control the target beam current in a wide range down to extremely low current without any change of the beam optics, and the other to focus heavy ion beams within a spot size of 1 μm. The final goal is to hit a microscopic target area with a single 15 MeV nickel ion. The beam spot size has been evaluated by Gaussian fitting of secondary electron profiles with microbeam scanning across the fine Cu mesh. The single ion detection has been also tested to generate a trigger signal for closing beam shutter to prevent further hits. This paper outlines the new microbeam system and describes methods to realize these techniques. (author)

  17. Applications of heavy ion microprobe for single event effects analysis

    Reed, Robert A.; Vizkelethy, Gyorgy; Pellish, Jonathan A.; Sierawski, Brian; Warren, Kevin M.; Porter, Mark; Wilkinson, Jeff; Marshall, Paul W.; Niu, Guofu; Cressler, John D.; Schrimpf, Ronald D.; Tipton, Alan; Weller, Robert A.

    2007-01-01

    The motion of ionizing-radiation-induced rogue charge carriers in a semiconductor can create unwanted voltage and current conditions within a microelectronic circuit. If sufficient unwanted charge or current occurs on a sensitive node, a variety of single event effects (SEEs) can occur with consequences ranging from trivial to catastrophic. This paper describes the application of heavy ion microprobes to assist with calibration and validation of SEE modeling approaches

  18. Destructive Single-Event Effects in Diodes

    Casey, Megan C.; Lauenstein, Jean-Marie; Campola, Michael J.; Wilcox, Edward P.; Phan, Anthony M.; Label, Kenneth A.

    2017-01-01

    In this work, we discuss the observed single-event effects in a variety of types of diodes. In addition, we conduct failure analysis on several Schottky diodes that were heavy-ion irradiated. High- and low-magnitude optical microscope images, infrared camera images, and scanning electron microscope images are used to identify and describe the failure locations.

  19. Profiling of Current Transients in Capacitor Type Diamond Sensors

    Gaubas, Eugenijus; Ceponis, Tomas; Meskauskaite, Dovile; Kazuchits, Nikolai

    2015-01-01

    The operational characteristics of capacitor-type detectors based on HPHT and CVD diamond have been investigated using perpendicular and parallel injection of carrier domain regimes. Simulations of the drift-diffusion current transients have been implemented by using dynamic models based on Shockley-Ramo’s theorem, under injection of localized surface domains and of bulk charge carriers. The bipolar drift-diffusion regimes have been analyzed for the photo-induced bulk domain (packet) of excess carriers. The surface charge formation and polarization effects dependent on detector biasing voltage have been revealed. The screening effects ascribed to surface charge and to dynamics of extraction of the injected bulk excess carrier domain have been separated and explained. The parameters of drift mobility of the electrons μe = 4000 cm2/Vs and holes μh = 3800 cm2/Vs have been evaluated for CVD diamond using the perpendicular profiling of currents. The coefficient of carrier ambipolar diffusion Da = 97 cm2/s and the carrier recombination lifetime τR,CVD ≌ 110 ns in CVD diamond were extracted by combining analysis of the transients of the sensor current and the microwave probed photoconductivity. The carrier trapping with inherent lifetime τR,HPHT ≌ 2 ns prevails in HPHT diamond. PMID:26061200

  20. Computation of transient 3-D eddy current in nonmagnetic conductor

    Yeh, H.T.

    1978-01-01

    A numerical procedure was developed to solve transient three-dimensional (3-D) eddy current problems for nonmagnetic conductor. Integral equation formulation in terms of vector potential is used to simplify the matching of boundary conditions. The resulting equations and their numerical approximation were shown to be singular and to require special handling. Several types of symmetries were introduced. They not only reduce the number of algebraic equations to be solved, but also modify the nature of the equations and render them nonsingular. Temporal behavior was obtained with the Runge-Kutta method. The program is tested in several examples of eddy currents for its spatial and temporal profiles, shielding, boundary surface effects, and application of various symmetry options

  1. Single-Event Effects in Silicon Carbide Power Devices

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Ikpe, Stanley; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2015-01-01

    This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.

  2. Experimental Setups for Single Event Effect Studies

    N. H. Medina; V. A. P. Aguiar; N. Added; F. Aguirre; E. L. A. Macchione; S. G. Alberton; M. A. G. Silveira; J. Benfica; F. Vargas; B. Porcher

    2016-01-01

    Experimental setups are being prepared to test and to qualify electronic devices regarding their tolerance to Single Event Effect (SEE). A multiple test setup and a new beam line developed especially for SEE studies at the São Paulo 8 UD Pelletron accelerator were prepared. This accelerator produces proton beams and heavy ion beams up to 107Ag. A Super conducting Linear accelerator, which is under construction, may fulfill all of the European Space Agency requirements to qualify electronic...

  3. Microbeam mapping of single event latchups and single event upsets in CMOS SRAMs

    Barak, J.; Adler, E.; Fischer, B.E.; Schloegl, M.; Metzger, S.

    1998-01-01

    The first simultaneous microbeam mapping of single event upset (SEU) and latchup (SEL) in the CMOS RAM HM65162 is presented. The authors found that the shapes of the sensitive areas depend on V DD , on the ions being used and on the site on the chip being hit by the ion. In particular, they found SEL sensitive sites close to the main power supply lines between the memory-bit-arrays by detecting the accompanying current surge. All these SELs were also accompanied by bit-flips elsewhere in the memory (which they call indirect SEUs in contrast to the well known SEUs induced in the hit memory cell only). When identical SEL sensitive sites were hit farther away from the supply lines only indirect SEL sensitive sites could be detected. They interpret these events as latent latchups in contrast to the classical ones detected by their induced current surge. These latent SELs were probably decoupled from the main supply lines by the high resistivity of the local supply lines

  4. Single Event Burnout in DC-DC Converters for the LHC Experiments

    Claudio H. Rivetta et al.

    2001-09-24

    High voltage transistors in DC-DC converters are prone to catastrophic Single Event Burnout in the LHC radiation environment. This paper presents a systematic methodology to analyze single event effects sensitivity in converters and proposes solutions based on de-rating input voltage and output current or voltage.

  5. Single event and TREE latchup mitigation for a star tracker sensor: An innovative approach to system level latchup mitigation

    Kimbrough, J.R.; Colella, N.J.; Davis, R.W.; Bruener, D.B.; Coakley, P.G.; Lutjens, S.W.; Mallon, C.E.

    1994-08-01

    Electronic packages designed for spacecraft should be fault-tolerant and operate without ground control intervention through extremes in the space radiation environment. If designed for military use, the electronics must survive and function in a nuclear radiation environment. This paper presents an innovative ''blink'' approach rather than the typical ''operate through'' approach to achieve system level latchup mitigation on a prototype star tracker camera. Included are circuit designs, flash x-ray test data, and heavy ion data demonstrating latchup mitigation protecting micro-electronics from current latchup and burnout due to Single Event Latchup (SEL) and Transient Radiation Effects on Electronics (TREE)

  6. Principle of the electrically induced Transient Current Technique

    Bronuzzi, J.; Moll, M.; Bouvet, D.; Mapelli, A.; Sallese, J. M.

    2018-05-01

    In the field of detector development for High Energy Physics, the so-called Transient Current Technique (TCT) is used to characterize the electric field profile and the charge trapping inside silicon radiation detectors where particles or photons create electron-hole pairs in the bulk of a semiconductor device, as PiN diodes. In the standard approach, the TCT signal originates from the free carriers generated close to the surface of a silicon detector, by short pulses of light or by alpha particles. This work proposes a new principle of charge injection by means of lateral PN junctions implemented in one of the detector electrodes, called the electrical TCT (el-TCT). This technique is fully compatible with CMOS technology and therefore opens new perspectives for assessment of radiation detectors performances.

  7. Single event upsets correlated with environment

    Vampola, A.L.; Albin, F.; Lauriente, M.; Wilkinson, D.C.; Allen, J.

    1994-01-01

    Single Event Upset rates on satellites in different Earth orbits are correlated with solar protons and geomagnetic activity and also with the NASA AP8 proton model to extract information about satellite anomalies caused by the space environment. An extensive discussion of the SEU data base from the TOMS solid state recorder and an algorithm for correcting spontaneous upsets in it are included as an Appendix. SAMPEX and TOMS, which have the same memory chips, have similar normalized responses in the South Atlantic Anomaly. SEU rates due to solar protons over the polar caps are within expectations. No geomagnetic activity effects can be discerned in the SEU rates

  8. Single-event effects in analog and mixed-signal integrated circuits

    Turflinger, T.L.

    1996-01-01

    Analog and mixed-signal integrated circuits are also susceptible to single-event effects, but they have rarely been tested. Analog circuit single-particle transients require modified test techniques and data analysis. Existing work is reviewed and future concerns are outlined

  9. Single Event Effects (SEE) for Power Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs)

    Lauenstein, Jean-Marie

    2011-01-01

    Single-event gate rupture (SEGR) continues to be a key failure mode in power MOSFETs. (1) SEGR is complex, making rate prediction difficult SEGR mechanism has two main components: (1) Oxide damage-- Reduces field required for rupture (2) Epilayer response -- Creates transient high field across the oxide.

  10. An Updated Perspective of Single Event Gate Rupture and Single Event Burnout in Power MOSFETs

    Titus, Jeffrey L.

    2013-06-01

    Studies over the past 25 years have shown that heavy ions can trigger catastrophic failure modes in power MOSFETs [e.g., single-event gate rupture (SEGR) and single-event burnout (SEB)]. In 1996, two papers were published in a special issue of the IEEE Transaction on Nuclear Science [Johnson, Palau, Dachs, Galloway and Schrimpf, “A Review of the Techniques Used for Modeling Single-Event Effects in Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 546-560, April. 1996], [Titus and Wheatley, “Experimental Studies of Single-Event Gate Rupture and Burnout in Vertical Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 533-545, Apr. 1996]. Those two papers continue to provide excellent information and references with regard to SEB and SEGR in vertical planar MOSFETs. This paper provides updated references/information and provides an updated perspective of SEB and SEGR in vertical planar MOSFETs as well as provides references/information to other device types that exhibit SEB and SEGR effects.

  11. Device simulation of charge collection and single-event upset

    Dodd, P.E.

    1996-01-01

    In this paper the author reviews the current status of device simulation of ionizing-radiation-induced charge collection and single-event upset (SEU), with an emphasis on significant results of recent years. The author presents an overview of device-modeling techniques applicable to the SEU problem and the unique challenges this task presents to the device modeler. He examines unloaded simulations of radiation-induced charge collection in simple p/n diodes, SEU in dynamic random access memories (DRAM's), and SEU in static random access memories (SRAM's). The author concludes with a few thoughts on future issues likely to confront the SEU device modeler

  12. Molecular aspects of adrenergic modulation of the transient outward current

    van der Heyden, Marcel A. G.; Wijnhoven, Tessa J. M.; Opthof, Tobias

    2006-01-01

    Transient outward channels have a different impact on action potential configuration in small mammals compared to large mammals. Small mammals depend primarily on Ito1 for repolarization, while in larger animals Ito1 only indirectly determines action potential duration by setting the level of the

  13. Triggering Mechanism for Neutron Induced Single-Event Burnout in Power Devices

    Shoji, Tomoyuki; Nishida, Shuichi; Hamada, Kimimori

    2013-04-01

    Cosmic ray neutrons can trigger catastrophic failures in power devices. It has been reported that parasitic transistor action causes single-event burnout (SEB) in power metal-oxide-semiconductor field-effect transistors (MOSFETs) and insulated gate bipolar transistors (IGBTs). However, power diodes do not have an inherent parasitic transistor. In this paper, we describe the mechanism triggering SEB in power diodes for the first time using transient device simulation. Initially, generated electron-hole pairs created by incident recoil ions generate transient current, which increases the electron density in the vicinity of the n-/n+ boundary. The space charge effect of the carriers leads to an increase in the strength of the electric field at the n-/n+ boundary. Finally, the onset of impact ionization at the n-/n+ boundary can trigger SEB. Furthermore, this failure is closely related to diode secondary breakdown. It was clarified that the impact ionization at the n-/n+ boundary is a key point of the mechanism triggering SEB in power devices.

  14. Modeling and simulation of single-event effect in CMOS circuit

    Yue Suge; Zhang Xiaolin; Zhao Yuanfu; Liu Lin; Wang Hanning

    2015-01-01

    This paper reviews the status of research in modeling and simulation of single-event effects (SEE) in digital devices and integrated circuits. After introducing a brief historical overview of SEE simulation, different level simulation approaches of SEE are detailed, including material-level physical simulation where two primary methods by which ionizing radiation releases charge in a semiconductor device (direct ionization and indirect ionization) are introduced, device-level simulation where the main emerging physical phenomena affecting nanometer devices (bipolar transistor effect, charge sharing effect) and the methods envisaged for taking them into account are focused on, and circuit-level simulation where the methods for predicting single-event response about the production and propagation of single-event transients (SETs) in sequential and combinatorial logic are detailed, as well as the soft error rate trends with scaling are particularly addressed. (review)

  15. Current thinking: return to play and transient quadriplegia.

    Cantu, Robert V; Cantu, Robert C

    2005-02-01

    Athletes that participate in contact and collision sports assume risk of serious injury each time they take the field. For those athletes that have sustained an episode of transient quadriplegia, the decision of whether to return to competition can be a difficult one. Some athletes, realizing how close they may have come to permanent injury, may decide that further participation is not in their best interest. Others may be somewhat undecided, and some may want to return at all costs. As the treating physician, the goal is to identify those athletes who after a single episode of transient quadriplegia are at increased risk for further injury and consequently should discontinue participation in contact sports. Factors that may contribute to that determination include mechanism of injury, prior history of neurologic symptoms or injury, and anatomic features that may predispose to further injury such as disc herniation, fracture, or cervical stenosis.

  16. Heavy Ion Current Transients in SiGe HBTs

    Pellish, Jonathan A.; Reed, Robert A.; Vizkelethy, Gyorgy; McMorrow, Dale; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philipe; Duhanel, Olivier; Phillips, Stanley D.; Sutton, Akil K.; hide

    2009-01-01

    Time-resolved ion beam induced charge reveals heavy ion response of IBM 5AM SiGe HBT: a) Position correlation[ b) Unique response for different bias schemes; c) Similarities to TPA pulsed-laser data. Heavy ion broad-beam transients provide more realistic device response: a) Feedback using microbeam data; b) Overcome issues of LET and ion range with microbeam. Both micro- and broad-beam data sets yield valuable input for TCAD simulations. Uncover detailed mechanisms for SiGe HBTs and other devices fabricated on lightly-doped substrates.

  17. A hybrid superconducting fault current limiter for enhancing transient stability in Korean power systems

    Seo, Sangsoo; Kim, Seog-Joo; Moon, Young-Hwan; Lee, Byongjun

    2013-11-01

    Additional power generation sites have been limited in Korea, despite the fact load demands are gradually increasing. In order to meet these increasing demands, Korea’s power system company has begun constructing new generators at existing sites. Thus, multi-unit plants can create problems in terms of transient stability when a large disturbance occurs. This paper proposes a hybrid superconducting fault current limiter (SFCL) application to enhance the transient stability of multi-unit power plants. SFCLs reduce fault currents, and limitation currents decrease the imbalance of the mechanical and electrical torque of the generators, resulting in an improvement in transient stability.

  18. Transient voltage response of a superconducting strip to a supercritical current pulse

    Attekum, P.M.Th.M. van; Wouters, M.C.H.M.; Wolter, J.; Horstman, R.E.

    1981-01-01

    A superconductor subject to a supercritical current pulse displays a delay time between the onset of the current pulse and the onset of the corresponding voltage response. From the onset of the voltage response it takes a second (transient) time to reach the stationary state. It is shown that the transient time can be explained with inhomogeneities in the strip which give rise to a distribution of delay times. The transient time is thus not related to a characteristic time in the superconductor. For small supercritical currents also heating effects show up. (author)

  19. Applicability of LET to single events in microelectronic structures

    Xapsos, Michael A.

    1992-12-01

    LET is often used as a single parameter to determine the energy deposited in a microelectronic structure by a single event. The accuracy of this assumption is examined for ranges of ion energies and volumes of silicon appropriate for modern microelectronics. It is shown to be accurate only under very restricted conditions. Significant differences arise because (1) LET is related to energy lost by the ion, not energy deposited in the volume; and (2) LET is an average value and does not account for statistical variations in energy deposition. Criteria are suggested for determining when factors other than LET should be considered, and new analytical approaches are presented to account for them. One implication of these results is that improvements can be made in space upset rate predictions by incorporating the new methods into currently used codes such as CREME and CRUP.

  20. Single event burnout sensitivity of embedded field effect transistors

    Koga, R.; Crain, S.H.; Crawford, K.B.; Yu, P.; Gordon, M.J.

    1999-01-01

    Observations of single event burnout (SEB) in embedded field effect transistors are reported. Both SEB and other single event effects are presented for several pulse width modulation and high frequency devices. The microscope has been employed to locate and to investigate the damaged areas. A model of the damage mechanism based on the results so obtained is described

  1. Measuring Single Event Upsets in the ATLAS Inner Tracker

    CERN. Geneva

    2015-01-01

    When the HL-LHC starts collecting data, the electronics inside will be subject to massive amounts of radiation. As a result, single event upsets could pose a threat to the ATLAS readout chain. The ABC130, a prototype front-end ASIC for the ATLAS inner tracker, must be tested for its susceptibility to single event upsets.

  2. Single event burnout sensitivity of embedded field effect transistors

    Koga, R.; Crain, S.H.; Crawford, K.B.; Yu, P.; Gordon, M.J.

    1999-12-01

    Observations of single event burnout (SEB) in embedded field effect transistors are reported. Both SEB and other single event effects are presented for several pulse width modulation and high frequency devices. The microscope has been employed to locate and to investigate the damaged areas. A model of the damage mechanism based on the results so obtained is described.

  3. Compendium of Single Event Effects, Total Ionizing Dose, and Displacement Damage for Candidate Spacecraft Electronics for NASA

    LaBel, Kenneth A.; OBryan, Martha V.; Chen, Dakai; Campola, Michael J.; Casey, Megan C.; Pellish, Jonathan A.; Lauenstein, Jean-Marie; Wilcox, Edward P.; Topper, Alyson D.; Ladbury, Raymond L.; hide

    2014-01-01

    We present results and analysis investigating the effects of radiation on a variety of candidate spacecraft electronics to proton and heavy ion induced single event effects (SEE), proton-induced displacement damage (DD), and total ionizing dose (TID). Introduction: This paper is a summary of test results.NASA spacecraft are subjected to a harsh space environment that includes exposure to various types of ionizing radiation. The performance of electronic devices in a space radiation environment is often limited by its susceptibility to single event effects (SEE), total ionizing dose (TID), and displacement damage (DD). Ground-based testing is used to evaluate candidate spacecraft electronics to determine risk to spaceflight applications. Interpreting the results of radiation testing of complex devices is quite difficult. Given the rapidly changing nature of technology, radiation test data are most often application-specific and adequate understanding of the test conditions is critical. Studies discussed herein were undertaken to establish the application-specific sensitivities of candidate spacecraft and emerging electronic devices to single-event upset (SEU), single-event latchup (SEL), single-event gate rupture (SEGR), single-event burnout (SEB), single-event transient (SET), TID, enhanced low dose rate sensitivity (ELDRS), and DD effects.

  4. Transient current in a quantum dot subject to a change in coupling to its leads

    Izmaylov, A F; Goker, A; Friedman, B A; Nordlander, P

    2006-01-01

    The time-dependent non-crossing approximation is used to calculate the transient currents through a quantum dot in the Kondo regime subject to a sudden change in its coupling to the leads. The currents are found to display transient non-universal behaviour immediately after the perturbation and then to follow a slow universal increase toward equilibrium. The timescales for the approach to equilibrium are shown to be the same as those recently identified in a study of transient currents in a quantum dot subject to a sudden change in the energy of the dot level (Plihal et al 2005 Phys. Rev. B 71 165321). We present improved numerical algorithms which enable relatively fast calculation of the transient response of quantum dots to sudden perturbations

  5. Transient current distributions in porous zinc electrodes in KOH electrolyte

    Liu, M.B.; Yamazaki, Y.; Cook, G.M.; Yao, N.P.

    1981-02-01

    A zero-resistance ammeter circuit with a 10-channel operational amplifier was used to measure the current distribution during a discharge of 10 to 100 mA with simulated zinc porous electrodes in 7.24 M KOH saturated with ZnO. The reaction distribution was found to be highly nonuniform, with 70 to 78% of the charge transfer reaction completed in a depth of 0.01 cm. The high nonuniformity of the initial reaction profile was believed to be due to low conductivity of the electrolyte in the electrode pores. The current distribution changes during passivation of the electrode were experimentally obtained. A mathematical model based upon a macroscope averaging technique was used to predict the time dependence of charge transfer reaction profiles. With mathematical model, current distributions and overpotentials were predicted as a function of time for the segmented zinc electrode discharged at a current of 10 to 100 mA; for these predictions, assumed values of both precipitation rate constants for porous ZnO and diffusion coefficients for hydroxide and zincate ions were used. A gradual decrease in the specific conductivity of the pore electrolyte to 20% of the initial value during discharge yields predictions of current distributions and overpotentials in good agreement with the experimental data. The extent of reduction in the specific conductivity of the pore electrolyte implies a supersaturation of zincate of four times chemical saturation, which was been observed experimentally.At high discharge current (25 to 100 mA), the passivation behavior of the electrode has been simulated. The results of the experiments and mathematical model show that the effective reaction penetration depth is less than 0.02 cm.

  6. Heavy Ion Microbeam- and Broadbeam-Induced Current Transients in SiGe HBTs

    Pellish, Jonathan A.; Reed, R. A.; McMorrow, D.; Vizkelethy, G.; Ferlet-Cavrois, V.; Baggio, J.; Duhamel, O.; Moen, K. A.; Phillips, S. D.; Diestelhorst, R. M.; hide

    2009-01-01

    IBM 5AM SiGe HBT is device-under-test. High-speed measurement setup. Low-impedance current transient measurements. SNL, JYFL, GANIL. Microbeam to broadbeam position inference. Improvement to state-of-the-art. Microbeam (SNL) transients reveal position dependent heavy ion response, Unique response for different device regions Unique response for different bias schemes. Similarities to TPA pulsed-laser data. Broadbeam transients (JYFL and GANIL) provide realistic heavy ion response. Feedback using microbeam data. Overcome issues of LET and ion range with microbeam. **Angled Ar-40 data in full paper. Data sets yield first-order results, suitable for TCAD calibration feedback.

  7. Transient current induced in thin film diamonds by swift heavy ions

    Sato, Shin-ichiro; Makino, Takahiro; Ohshima, Takeshi; Kamiya, Tomihiro; Kada, Wataru

    2017-01-01

    Single crystal diamond is a suitable material for the next generation particle detectors because of the superior electrical properties and the high radiation tolerance. In order to investigate charge transport properties of diamond particle detectors, transient currents generated in diamonds by single swift heavy ions (26 MeV O 5+ and 45 MeV Si 7+ ) are investigated. We also measured two dimensional maps of transient currents by single ion hits. In the case of 50 μm-thick diamond, both the signal height and the collected charge are reduced by the subsequent ion hits and the charge collection time is extended. Our results are thought to be attributable to the polarization effect in diamond and it appears only when the transient current is dominated by hole current. In the case of 6 μm-thick diamond membrane, an “island” structure is found in the 2D map of transient currents. Signals in the islands shows different applied bias dependence from signals in other regions, indicating different crystal and/or metal contact quality. Simulation study of transient currents based on the Shockley-Ramo theorem clarifies that accumulation of space charges changes distribution of electric field in diamond and causes the polarization effect.

  8. Non Invasive Instrumentation For Single Event Effects (NIISEE), Phase I

    National Aeronautics and Space Administration — On this Phase 1 project, Adventium will identify and address key hurdles to achieve Radiation Hardening by Software (RHS) for Single Event Effects (SEEs) for modern...

  9. Single Event Upsets in the ATLAS IBL Front End ASICs

    Rozanov, Alexander; The ATLAS collaboration

    2018-01-01

    During operation at instantaneous luminosities of up to 2.1 10^{34} cm^{-2} s^{-1} the front end chips of the ATLAS innermost pixel layer (IBL) experienced single event upsets affecting its global registers as well as the settings for the individual pixels, causing, among other things loss of occupancy, noisy pixels, and silent pixels. A quantitative analysis of the single event upsets as well as the operational issues and mitigation techniques will be presented.

  10. Single Event Upsets in the ATLAS IBL Front End ASICs

    Rozanov, Alexandre; The ATLAS collaboration

    2018-01-01

    During operation at instantaneous luminosities of up to 2.1 1034 cm2 s−1 frontend chips of the ATLAS innermost pixel layer (IBL) experienced single event upsets affecting its global registers as well as the settings for the individual pixels, causing, amongst other things loss of occupancy, noisy pixels, and silent pixels. A quantitative analysis of the single event upsets as well as the operational issues and mitigation techniques are presented.

  11. Approximative calculation of transient short-circuit currents in power-systems

    Heuck, K; Rosenberger, R; Dettmann, K D; Kegel, R

    1986-08-01

    The paper shows that it is approximatively possible to calculate the transient short-circuit currents for symmetrical and asymmetrical faults in power-systems. For that purpose a simple equivalent network is found. Its error of approximation is small. For the important maximum short-circuit current limits of error are pointed out compared to VDE 0102.

  12. Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets of NAND Flash Memory

    Chen, Dakai; Wilcox, Edward; Ladbury, Raymond; Kim, Hak; Phan, Anthony; Seidleck, Christina; LaBel, Kenneth

    2016-01-01

    We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found the single-event upset (SEU) cross section varied inversely with fluence. The SEU cross section decreased with increasing fluence. We attribute the effect to the variable upset sensitivities of the memory cells. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, heavy ion irradiation of devices with variable upset sensitivity distribution using typical fluence levels may underestimate the cross section and on-orbit event rate.

  13. Experimental study on heavy-ion single event effect on nanometer DDR SRAM

    Luo Yinhong; Zhang Fengqi; Guo Hongxia; Zhou Hui; Wang Yanping; Zhang Keying

    2013-01-01

    Single event effect experimental study on 90 nm and 65 nm DDR SRAM were carried out, single event upset (SEU) cross section was discussed as a function of several parameters such as feature size, test pattern, incidence angle, supply voltage. Key influence factors and effect rule were analyzed. Feasibility of the current test method was discussed. Results indicate that, SEU cross section reduces as technologies scale down; the influence of test pattern and power supply on SEU cross section is small; tilt angle increases SEU cross section due to multiple upset increasement. The applicability of cosine tilt test method is correlative to ion species and linear energy transfer (LET) values. (authors)

  14. Current status of the transient integral fuel element performance code URANUS

    Preusser, T.; Lassmann, K.

    1983-01-01

    To investigate the behavior of fuel pins during normal and off-normal operation, the integral fuel rod code URANUS has been extended to include a transient version. The paper describes the current status of the program system including a presentation of newly developed models for hypothetical accident investigation. The main objective of current development work is to improve the modelling of fuel and clad material behavior during fast transients. URANUS allows detailed analysis of experiments until the onset of strong material transport phenomena. Transient fission gas analysis is carried out due to the coupling with a special version of the LANGZEIT-KURZZEIT-code (KfK). Fuel restructuring and grain growth kinetics models have been improved recently to better characterize pre-experimental steady-state operation; transient models are under development. Extensive verification of the new version has been carried out by comparison with analytical solutions, experimental evidence, and code-to-code evaluation studies. URANUS, with all these improvements, has been successfully applied to difficult fast breeder fuel rod analysis including TOP, LOF, TUCOP, local coolant blockage and specific carbide fuel experiments. Objective of further studies is the description of transient PCMI. It is expected that the results of these developments will contribute significantly to the understanding of fuel element structural behavior during severe transients. (orig.)

  15. Evaluating transient performance of servo mechanisms by analysing stator current of PMSM

    Zhang, Qing; Tan, Luyao; Xu, Guanghua

    2018-02-01

    Smooth running and rapid response are the desired performance goals for the transient motions of servo mechanisms. Because of the uncertain and unobservable transient behaviour of servo mechanisms, it is difficult to evaluate their transient performance. Under the effects of electromechanical coupling, the stator current signals of a permanent-magnet synchronous motor (PMSM) potentially contain the performance information regarding servo mechanisms in use. In this paper, a novel method based on analysing the stator current of the PMSM is proposed for quantifying the transient performance. First, a vector control model is constructed to simulate the stator current behaviour in the transient processes of consecutive speed changes, consecutive load changes, and intermittent start-stops. It is discovered that the amplitude and frequency of the stator current are modulated by the transient load torque and motor speed, respectively. The stator currents under different performance conditions are also simulated and compared. Then, the stator current is processed using a local means decomposition (LMD) algorithm to extract the instantaneous amplitude and instantaneous frequency. The sample entropy of the instantaneous amplitude, which reflects the complexity of the load torque variation, is calculated as a performance indicator of smooth running. The peak-to-peak value of the instantaneous frequency, which defines the range of the motor speed variation, is set as a performance indicator of rapid response. The proposed method is applied to both simulated data in an intermittent start-stops process and experimental data measured for a batch of servo turrets for turning lathes. The results show that the performance evaluations agree with the actual performance.

  16. Transient analysis for alternating over-current characteristics of HTSC power transmission cable

    Lim, S. H.; Hwang, S. D.

    2006-10-01

    In this paper, the transient analysis for the alternating over-current distribution in case that the over-current was applied for a high-TC superconducting (HTSC) power transmission cable was performed. The transient analysis for the alternating over-current characteristics of HTSC power transmission cable with multi-layer is required to estimate the redistribution of the over-current between its conducting layers and to protect the cable system from the over-current in case that the quench in one or two layers of the HTSC power cable happens. For its transient analysis, the resistance generation of the conducting layers for the alternating over-current was reflected on its equivalent circuit, based on the resistance equation obtained by applying discrete Fourier transform (DFT) for the voltage and the current waveforms of the HTSC tape, which comprises each layer of the HTSC power transmission cable. It was confirmed through the numerical analysis on its equivalent circuit that after the current redistribution from the outermost layer into the inner layers first happened, the fast current redistribution between the inner layers developed as the amplitude of the alternating over-current increased.

  17. Emergence of currents as a transient quantum effect in nonequilibrium systems

    Granot, Er' el; Marchewka, Avi [Department of Electrical and Electronics Engineering, Ariel University Center of Samaria, Ariel (Israel)

    2011-09-15

    Most current calculations are based on equilibrium or semi-equilibrium models. However, except for very special scenarios (like ring configuration), the current cannot exist in equilibrium. Moreover, unlike with equilibrium scenarios, there is no generic approach to confront out-of-equilibrium currents. In this paper we used recent studies on transient quantum mechanics to solve the current, which appears in the presence of very high density gradients and fast transients. It shows that the emerging current appears instantaneously, and although the density beyond the discontinuity is initially negligible the currents there have a finite value, and remain constant for a finite period. It is shown that this nonequilibrium effect can be measured in real experiments (such as cooled rubidium atoms), where the discontinuity is replaced with a finite width (hundreds of nanometers) gradient.

  18. Emergence of currents as a transient quantum effect in nonequilibrium systems

    Granot, Er'el; Marchewka, Avi

    2011-01-01

    Most current calculations are based on equilibrium or semi-equilibrium models. However, except for very special scenarios (like ring configuration), the current cannot exist in equilibrium. Moreover, unlike with equilibrium scenarios, there is no generic approach to confront out-of-equilibrium currents. In this paper we used recent studies on transient quantum mechanics to solve the current, which appears in the presence of very high density gradients and fast transients. It shows that the emerging current appears instantaneously, and although the density beyond the discontinuity is initially negligible the currents there have a finite value, and remain constant for a finite period. It is shown that this nonequilibrium effect can be measured in real experiments (such as cooled rubidium atoms), where the discontinuity is replaced with a finite width (hundreds of nanometers) gradient.

  19. Emergence of currents as a transient quantum effect in nonequilibrium systems

    Granot, Er'El; Marchewka, Avi

    2011-09-01

    Most current calculations are based on equilibrium or semi-equilibrium models. However, except for very special scenarios (like ring configuration), the current cannot exist in equilibrium. Moreover, unlike with equilibrium scenarios, there is no generic approach to confront out-of-equilibrium currents. In this paper we used recent studies on transient quantum mechanics to solve the current, which appears in the presence of very high density gradients and fast transients. It shows that the emerging current appears instantaneously, and although the density beyond the discontinuity is initially negligible the currents there have a finite value, and remain constant for a finite period. It is shown that this nonequilibrium effect can be measured in real experiments (such as cooled rubidium atoms), where the discontinuity is replaced with a finite width (hundreds of nanometers) gradient.

  20. Transport properties of triarylamine based dendrimers studied by space charge limited current transients

    Szymanski, Marek Z.; Kulszewicz-Bajer, Irena; Faure-Vincent, Jérôme; Djurado, David

    2012-08-01

    We have studied hole transport in triarylamine based dendrimer using space-charge-limited current transient technique. A mobility of 8 × 10-6 cm2/(V s) and a characteristic detrapping time of about 100 ms have been obtained. We found that quasi-ohmic contact is formed with gold. The obtained mobility differs from the apparent one given by the analysis of stationary current-voltage characteristics because of a limited contact efficiency. The comparison between transients obtained from fresh and aged samples reveals no change in mobility with aging. The deterioration of electrical properties is exclusively caused by trap formation and accumulation of ionic conducting impurities. Finally, repeated transient measurements have been applied to analyze the dynamics of charge trapping process.

  1. European accelerator facilities for single event effects testing

    Adams, L; Nickson, R; Harboe-Sorensen, R [ESA-ESTEC, Noordwijk (Netherlands); Hajdas, W; Berger, G

    1997-03-01

    Single event effects are an important hazard to spacecraft and payloads. The advances in component technology, with shrinking dimensions and increasing complexity will give even more importance to single event effects in the future. The ground test facilities are complex and expensive and the complexities of installing a facility are compounded by the requirement that maximum control is to be exercised by users largely unfamiliar with accelerator technology. The PIF and the HIF are the result of experience gained in the field of single event effects testing and represent a unique collaboration between space technology and accelerator experts. Both facilities form an essential part of the European infrastructure supporting space projects. (J.P.N.)

  2. Inrush Transient Current Analysis and Suppression of Photovoltaic Grid-Connected Inverters During Voltage Sag

    Li, Zhongyu; Zhao, Rende; Xin, Zhen

    2016-01-01

    The Inrush Transient Current (ITC) in the output of the photovoltaic grid-connected inverters is usually generated when grid voltage sag occurs, which can trigger the protection of the grid-connected inverters, and even destroy the semiconductor switches. Then, the grid-connected inverters...

  3. Fast transient current response to switching events in short chains of molecular islands

    Kalvová, Anděla; Špička, Václav; Velický, B.

    2013-01-01

    Roč. 26, č. 4 (2013), s. 773-777 ISSN 1557-1939 R&D Projects: GA ČR GAP204/12/0897 Institutional support: RVO:68378271 Keywords : nonequilibrium * molecular islands * initial correlations * transient currents Subject RIV: BE - Theoretical Physics Impact factor: 0.930, year: 2013

  4. Differential effects of the transient outward K(+) current activator NS5806 in the canine left ventricle

    Calloe, Kirstine; Soltysinska, Ewa; Jespersen, Thomas

    2009-01-01

    To examine the electrophysiological and molecular properties of the transient outward current (I(to)) in canine left ventricle using a novel I(to) activator, NS5806, I(to) was measured in isolated epicardial (Epi), midmyocardial (Mid) and endocardial (Endo) cells using whole-cell patch-clamp tech...

  5. Influence of wavelength on transient short-circuit current in polycrystalline silicon solar cells

    Ba, B.; Kane, M.

    1993-10-01

    The influence of the wavelength of a monochromatic illumination on transient short-circuit current in an n/p polycrystalline silicon part solar cell junction is investigated. A wavelength dependence in the initial part of the current decay is observed in the case of cells with moderate grain boundary effects. This influence is attenuated in polycrystalline cells with strong grain boundary activity. (author). 10 refs, 6 figs

  6. Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for Single-Event Gate Rupture and Single-Event Burnout

    Scheick, Leif

    2014-01-01

    Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture's data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data. Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most commonly used power transistor. MOSFETs are typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single-event gate rupture (SEGR) or single-event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. See [1] through [5] for more information. The objective of this effort was to investigate the SEGR and SEB responses of two power MOSFETs recently produced. These tests will serve as a limited verification of these parts. It is acknowledged that further testing on the respective parts may be needed for some mission profiles.

  7. Physical mechanisms of single-event effects in advanced microelectronics

    Schrimpf, Ronald D. [Electrical Engineering and Computer Science, Vanderbilt University, 5635 Stevenson Center, Nashville, TN 37235 (United States)]. E-mail: ron.schrimpf@vanderbilt.edu; Weller, Robert A. [Electrical Engineering and Computer Science, Vanderbilt University, 5635 Stevenson Center, Nashville, TN 37235 (United States); Mendenhall, Marcus H. [Free Electron Laser Center, Vanderbilt University, Station B 351816, Nashville, TN 37235 (United States); Reed, Robert A. [Electrical Engineering and Computer Science, Vanderbilt University, 5635 Stevenson Center, Nashville, TN 37235 (United States); Massengill, Lloyd W. [Electrical Engineering and Computer Science, Vanderbilt University, 5635 Stevenson Center, Nashville, TN 37235 (United States)

    2007-08-15

    The single-event error rate in advanced semiconductor technologies can be estimated more accurately than conventional methods by using simulation based on accurate descriptions of a large number of individual particle interactions. The results can be used to select the ion types and energies for accelerator testing and to identify situations in which nuclear reactions will contribute to the error rate.

  8. Physical mechanisms of single-event effects in advanced microelectronics

    Schrimpf, Ronald D.; Weller, Robert A.; Mendenhall, Marcus H.; Reed, Robert A.; Massengill, Lloyd W.

    2007-01-01

    The single-event error rate in advanced semiconductor technologies can be estimated more accurately than conventional methods by using simulation based on accurate descriptions of a large number of individual particle interactions. The results can be used to select the ion types and energies for accelerator testing and to identify situations in which nuclear reactions will contribute to the error rate

  9. Single-event burnout of epitaxial bipolar transistors

    Kuboyama, S.; Sugimoto, K.; Shugyo, S.; Matsuda, S. [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan); Hirao, T. [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan)

    1998-12-01

    Single-Event Burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs, including small signal transistors, with thinner epitaxial layers were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified.

  10. Single-event burnout of epitaxial bipolar transistors

    Kuboyama, Satoshi; Sugimoto, Kenji; Matsuda, Sumio [National Space Development Agency of Japan, Ysukuba, Ibaraki (Japan); Hirao, Toshio

    1998-10-01

    Single-event burnout (SEB) of bipolar junction transistors (BJTs) has been observed nondestructively. It was revealed that all the NPN BJTs including small signal transistors with thinner epitaxial layer were inherently susceptible to the SEB phenomenon. It was demonstrated that several design parameters of BJTs were responsible for SEB susceptibility. Additionally, destructive and nondestructive modes of SEB were identified. (author)

  11. Single Event Effects in FPGA Devices 2015-2016

    Berg, Melanie; LaBel, Kenneth; Pellish, Jonathan

    2016-01-01

    This presentation provides an overview of single event effects in FPGA devices 2015-2016 including commercial Xilinx V5 heavy ion accelerated testing, Xilinx Kintex-7 heavy ion accelerated testing, mitigation study, and investigation of various types of triple modular redundancy (TMR) for commercial SRAM based FPGAs.

  12. Evaluation of the Transient Eddy Current Potential Drop of a Four Point Probe

    Bowler, J. R.

    2009-03-01

    The transient electrical potential drop of a four point probe has been calculated for the case where a current pulse is injected into a conductive plate via two surface contact electrodes and the voltage measured between two other contact electrodes. The four contact points can be co-linear but this is not always case. For example, they can form a rectangle. Usually such probes carry direct current or alternating current and are used to measure electrical conductivity, crack dimensions or variations of conductivity and magnetic permeability with depth. However, the advantage of a current pulse excitation is that information on the variations of material properties with depth can be acquired rapidly and conveniently. What is needed is a means to infer material properties such as the conductivity variations with depth from the transient field measurements. Here, as an initial step in developing this analysis, we report on the evaluation of transient potential drop signals for four point probes on a homogeneous conductive plates.

  13. Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis

    Zeinolabedinzadeh, Saeed; Ying, Hanbin; Fleetwood, Zachary E.; Roche, Nicolas J.-H.; Khachatrian, Ani; McMorrow, Dale; Buchner, Stephen P.; Warner, Jeffrey H.; Paki-Amouzou, Pauline; Cressler, John D.

    2017-01-01

    The single-event transient (SET) response of two different silicon-germanium (SiGe) X-band (8-12 GHz) low noise amplifier (LNA) topologies is fully investigated in this paper. The two LNAs were designed and implemented in 130nm SiGe HBT BiCMOS process technology. Two-photon absorption (TPA) laser pulses were utilized to induce transients within various devices in these LNAs. Impulse response theory is identified as a useful tool for predicting the settling behavior of the LNAs subjected to heavy ion strikes. Comprehensive device and circuit level modeling and simulations were performed to accurately simulate the behavior of the circuits under ion strikes. The simulations agree well with TPA measurements. The simulation, modeling and analysis presented in this paper can be applied for any other circuit topologies for SET modeling and prediction.

  14. Immersed transient eddy current flow metering: a calibration-free velocity measurement technique for liquid metals

    Krauter, N.; Stefani, F.

    2017-10-01

    Eddy current flow meters are widely used for measuring the flow velocity of electrically conducting fluids. Since the flow induced perturbations of a magnetic field depend both on the geometry and the conductivity of the fluid, extensive calibration is needed to get accurate results. Transient eddy current flow metering has been developed to overcome this problem. It relies on tracking the position of an impressed eddy current system that is moving with the same velocity as the conductive fluid. We present an immersed version of this measurement technique and demonstrate its viability by numerical simulations and a first experimental validation.

  15. Immersed transient eddy current flow metering: a calibration-free velocity measurement technique for liquid metals

    Krauter, N; Stefani, F

    2017-01-01

    Eddy current flow meters are widely used for measuring the flow velocity of electrically conducting fluids. Since the flow induced perturbations of a magnetic field depend both on the geometry and the conductivity of the fluid, extensive calibration is needed to get accurate results. Transient eddy current flow metering has been developed to overcome this problem. It relies on tracking the position of an impressed eddy current system that is moving with the same velocity as the conductive fluid. We present an immersed version of this measurement technique and demonstrate its viability by numerical simulations and a first experimental validation. (paper)

  16. FORTRAN programs for transient eddy current calculations using a perturbation-polynomial expansion technique

    Carpenter, K.H.

    1976-11-01

    A description is given of FORTRAN programs for transient eddy current calculations in thin, non-magnetic conductors using a perturbation-polynomial expansion technique. Basic equations are presented as well as flow charts for the programs implementing them. The implementation is in two steps--a batch program to produce an intermediate data file and interactive programs to produce graphical output. FORTRAN source listings are included for all program elements, and sample inputs and outputs are given for the major programs

  17. Simulating single-event burnout of n-channel power MOSFET's

    Johnson, G.H.; Hohl, J.H.; Schrimpf, R.D.; Galloway, K.F.

    1993-01-01

    Heavy ions are ubiquitous in a space environment. Single-event burnout of power MOSFET's is a sudden catastrophic failure mechanism that is initiated by the passage of a heavy ion through the device structure. The passage of the heavy ion generates a current filament that locally turns on a parasitic n-p-n transistor inherent to the power MOSFET. Subsequent high currents and high voltage in the device induce second breakdown of the parasitic bipolar transistor and hence meltdown of the device. This paper presents a model that can be used for simulating the burnout mechanism in order to gain insight into the significant device parameters that most influence the single-event burnout susceptibility of n-channel power MOSFET's

  18. A fast transient response low dropout regulator with current control methodology

    Ma Zhuo; Guo Yang; Duan Zhikui; Xie Lunguo; Chen Jihua; Yu Jinshan, E-mail: guoyang@nudt.edu.cn [School of Computer, National University of Defense Technology, Changsha 410073 (China)

    2011-08-15

    A transient performance optimized CCL-LDO regulator is proposed. In the CCL-LDO, the control method of the charge pump phase-locked loop is adopted. A current control loop has the feedback signal and reference current to be compared, and then a loop filter generates the gate voltage of the power MOSFET by integrating the error current. The CCL-LDO has the optimized damping coefficient and natural resonant frequency, while its output voltage can be sub-1-V and is not restricted by the reference voltage. With a 1 {mu}F decoupling capacitor, the experimental results based on a 0.13 {mu}m CMOS process show that the output voltage is 1.0 V; when the workload changes from 100 {mu}A to 100 mA transiently, the stable dropout is 4.25 mV, the settling time is 8.2 {mu}s and the undershoot is 5.11 mV; when the workload changes from 100 mA to 100 {mu}A transiently, the stable dropout is 4.25 mV, the settling time is 23.3 {mu}s and the overshoot is 6.21 mV. The PSRR value is more than -95 dB. Most of the attributes of the CCL-LDO are improved rapidly with a FOM value of 0.0097.

  19. A fast transient response low dropout regulator with current control methodology

    Ma Zhuo; Guo Yang; Duan Zhikui; Xie Lunguo; Chen Jihua; Yu Jinshan

    2011-01-01

    A transient performance optimized CCL-LDO regulator is proposed. In the CCL-LDO, the control method of the charge pump phase-locked loop is adopted. A current control loop has the feedback signal and reference current to be compared, and then a loop filter generates the gate voltage of the power MOSFET by integrating the error current. The CCL-LDO has the optimized damping coefficient and natural resonant frequency, while its output voltage can be sub-1-V and is not restricted by the reference voltage. With a 1 μF decoupling capacitor, the experimental results based on a 0.13 μm CMOS process show that the output voltage is 1.0 V; when the workload changes from 100 μA to 100 mA transiently, the stable dropout is 4.25 mV, the settling time is 8.2 μs and the undershoot is 5.11 mV; when the workload changes from 100 mA to 100 μA transiently, the stable dropout is 4.25 mV, the settling time is 23.3 μs and the overshoot is 6.21 mV. The PSRR value is more than -95 dB. Most of the attributes of the CCL-LDO are improved rapidly with a FOM value of 0.0097.

  20. Fast and efficient STT switching in MTJ using additional transient pulse current

    Pathak, Sachin; Cha, Jongin; Jo, Kangwook; Yoon, Hongil; Hong, Jongill

    2017-06-01

    We propose a profile of write pulse current-density to switch magnetization in a perpendicular magnetic tunnel junction to reduce switching time and write energy as well. Our simulated results show that an overshoot transient pulse current-density (current spike) imposed to conventional rectangular-shaped pulse current-density (main pulse) significantly improves switching speed that yields the reduction in write energy accordingly. For example, we could dramatically reduce the switching time by 80% and thereby reduce the write energy over 9% in comparison to the switching without current spike. The current spike affects the spin dynamics of the free layer and reduces the switching time mainly due to spin torque induced. On the other hand, the large Oersted field induced causes changes in spin texture. We believe our proposed write scheme can make a breakthrough in magnetic random access memory technology seeking both high speed operation and low energy consumption.

  1. Single event time series analysis in a binary karst catchment evaluated using a groundwater model (Lurbach system, Austria).

    Mayaud, C; Wagner, T; Benischke, R; Birk, S

    2014-04-16

    The Lurbach karst system (Styria, Austria) is drained by two major springs and replenished by both autogenic recharge from the karst massif itself and a sinking stream that originates in low permeable schists (allogenic recharge). Detailed data from two events recorded during a tracer experiment in 2008 demonstrate that an overflow from one of the sub-catchments to the other is activated if the discharge of the main spring exceeds a certain threshold. Time series analysis (autocorrelation and cross-correlation) was applied to examine to what extent the various available methods support the identification of the transient inter-catchment flow observed in this binary karst system. As inter-catchment flow is found to be intermittent, the evaluation was focused on single events. In order to support the interpretation of the results from the time series analysis a simplified groundwater flow model was built using MODFLOW. The groundwater model is based on the current conceptual understanding of the karst system and represents a synthetic karst aquifer for which the same methods were applied. Using the wetting capability package of MODFLOW, the model simulated an overflow similar to what has been observed during the tracer experiment. Various intensities of allogenic recharge were employed to generate synthetic discharge data for the time series analysis. In addition, geometric and hydraulic properties of the karst system were varied in several model scenarios. This approach helps to identify effects of allogenic recharge and aquifer properties in the results from the time series analysis. Comparing the results from the time series analysis of the observed data with those of the synthetic data a good agreement was found. For instance, the cross-correlograms show similar patterns with respect to time lags and maximum cross-correlation coefficients if appropriate hydraulic parameters are assigned to the groundwater model. The comparable behaviors of the real and the

  2. Charge collection and SEU (Single Event Upset) mechanisms

    Musseau, O.

    1994-01-01

    The purpose of this paper is to review the mechanisms of single event upset in microelectronic devices due to interaction with cosmic ions. Experimental and theoretical results are presented, and actual questions and problems are discussed. A brief introduction recalls the creation of the dense plasma of electron-hole pairs along the ion track. The basic processes for charge collection in a simple np junction (drift and diffusion) are presented. The funneling-field effect is discussed and experimental results are compared to numerical simulations and semi-empirical models. Charge collection in actual microelectronic structures is then presented. Single event upset of memory cells is discussed, based on numerical and experimental data. The main parameters for device characterization are presented. From the physical interpretation of charge collection mechanisms, the intrinsic sensitivity of various microelectronic technologies is determined and compared to experimental data. Scaling laws and future trends are discussed. (author)

  3. Single event effects in pulse width modulation controllers

    Penzin, S.H.; Crain, W.R.; Crawford, K.B.; Hansel, S.J.; Kirshman, J.F.; Koga, R.

    1996-01-01

    SEE testing was performed on pulse width modulation (PWM) controllers which are commonly used in switching mode power supply systems. The devices are designed using both Set-Reset (SR) flip-flops and Toggle (T) flip-flops which are vulnerable to single event upset (SEU) in a radiation environment. Depending on the implementation of the different devices the effect can be significant in spaceflight hardware

  4. Analysis of transient state in HTS tapes under ripple DC load current

    Stepien, M.; Grzesik, B.

    2014-05-01

    The paper concerns the analysis of transient state (quench transition) in HTS tapes loaded with the current having DC component together with a ripple component. Two shapes of the ripple were taken into account: sinusoidal and triangular. Very often HTS tape connected to a power electronic current supply (i.e. superconducting coil for SMES) that delivers DC current with ripples and it needs to be examined under such conditions. Additionally, measurements of electrical (and thermal) parameters under such ripple excitation is useful to tape characterization in broad range of load currents. The results presented in the paper were obtained using test bench which contains programmable DC supply and National Instruments data acquisition system. Voltage drops and load currents were measured vs. time. Analysis of measured parameters as a function of the current was used to tape description with quench dynamics taken into account. Results of measurements were also used to comparison with the results of numerical modelling based on FEM. Presented provisional results show possibility to use results of measurements in transient state to prepare inverse models of superconductors and their detailed numerical modelling.

  5. Modelling the transient behaviour of pulsed current tungsten-inert-gas weldpools

    Wu, C. S.; Zheng, W.; Wu, L.

    1999-01-01

    A three-dimensional model is established to simulate the pulsed current tungsten-inert-gas (TIG) welding process. The goal is to analyse the cyclic variation of fluid flow and heat transfer in weldpools under periodic arc heat input. To this end, an algorithm, which is capable of handling the transience, nonlinearity, multiphase and strong coupling encountered in this work, is developed. The numerical simulations demonstrate the transient behaviour of weldpools under pulsed current. Experimental data are compared with numerical results to show the effectiveness of the developed model.

  6. Transient characteristics of current lead losses for the large scale high-temperature superconducting rotating machine

    Le, T. D.; Kim, J. H.; Park, S. I.; Kim, D. J.; Kim, H. M.; Lee, H. G.; Yoon, Y. S.; Jo, Y. S.; Yoon, K. Y.

    2014-01-01

    To minimize most heat loss of current lead for high-temperature superconducting (HTS) rotating machine, the choice of conductor properties and lead geometry - such as length, cross section, and cooling surface area - are one of the various significant factors must be selected. Therefore, an optimal lead for large scale of HTS rotating machine has presented before. Not let up with these trends, this paper continues to improve of diminishing heat loss for HTS part according to different model. It also determines the simplification conditions for an evaluation of the main flux flow loss and eddy current loss transient characteristics during charging and discharging period.

  7. Analyzing System on A Chip Single Event Upset Responses using Single Event Upset Data, Classical Reliability Models, and Space Environment Data

    Berg, Melanie; LaBel, Kenneth; Campola, Michael; Xapsos, Michael

    2017-01-01

    We are investigating the application of classical reliability performance metrics combined with standard single event upset (SEU) analysis data. We expect to relate SEU behavior to system performance requirements. Our proposed methodology will provide better prediction of SEU responses in harsh radiation environments with confidence metrics. single event upset (SEU), single event effect (SEE), field programmable gate array devises (FPGAs)

  8. Development of system for automatic measurement of transient photocurrent and thermally stimulated current

    Asdrubal Antonio Ramirez Botero

    2017-01-01

    Full Text Available This paper presents details of the design and implementation of a system for measuring of thermally stimulated current (TSC and transient photocurrent (Iph, developed using the Virtual Instrumentation concept. For that we have used National Instrument hardware and the LabView® package as software. The system is controlled by a virtual instrument (VI which includes facilities to perform measurements of photocurrent keeping the temperature of the sample and the pressure of the chamber of measurement controlled as well as  real time display of the Iph vs t and TSC vs T curves. The system was tested by performing transient photocurrent and TSC measurements on CH3NH3PbI3 thin films that are generally used as absorbent layer of solar cells. This type of characterization is very useful to get information of the  trapping and recombination processes that affect the transport properties of the devices.

  9. Investigation of photoelectronic processes in CdIn2S4 by photoinduced current transient spectroscopy

    Serpi, A.

    1986-01-01

    Photoelectronic processes in CdIn 2 S 4 are investigated by four-gate photoinduced current transient spectroscopy. In general the photocurrent decay transients are non-exponential because of a nonlinear multichannel recombination mechanism. Nevertheless suitable extrinsic excitation allows to open one recombination channel only and so to evidence a purely exponential relaxation. The detailed analysis of this process leads to the interpretation that the defects associated with the energy levels continuously distributed below the conduction band act as relay centres for radiative recombination of photoelectrons rather than as thermal emitting traps. An electron trapping level located at about 0.6 eV from the bottom of the conduction band is also evidenced. (author)

  10. Theory of potentiostatic current transients for coupled catalytic reaction at random corrugated fractal electrode

    Jha, Shailendra K.; Kant, Rama

    2010-01-01

    We developed a mathematical model for the first order homogeneous catalytic chemical reaction coupled with an electron transfer (EC') on a rough working electrode. Results are obtained for the various roughness models of electrode corrugations, viz., (i) roughness as an exact periodic function, (ii) roughness as a random function with known statistical properties, and (iii) roughness as a random function with statistical self-affine fractality over a finite range of length scales. Method of Green's function is used in the formulation to obtain second-order perturbation (in roughness profile) expressions for the concentration, the local current density and the current transients. A general operator structure between these quantities and arbitrary roughness profile is emphasized. The statistically averaged (randomly rough) electrode response is obtained by an ensemble averaging over all possible surface configurations. An elegant mathematical formula between the average electrochemical current transient and surface structure factor or power-spectrum of roughness is obtained. This formula is used to obtain an explicit equation for the current on an approximately self-affine (or realistic) fractal electrode with a limited range of length scales of irregularities. This description of realistic fractal is obtained by cutoff power law power-spectrum of roughness. The realistic fractal power-spectrum consists of four physical characteristics, viz., the fractal dimension (D H ), lower (l) and upper (L) cutoff length scales of fractality and a proportionality factor (μ), which is related to the topothesy or strength of fractality. Numerical calculations are performed on final results to understand the effect of catalytic reaction and fractal morphological characteristics on potentiostatic current transients.

  11. Featuring of transient tunneling current by voltage pulse and application to an electrochemical biosensor

    Yun, Jun Yeon; Lee, Won Cheol; Choi, Seong Wook; Park, Young June

    2018-03-01

    We suggest a voltage pulse method for detecting the transient tunneling current component (faradaic current component) in a metal/redox-active monolayer/electrolyte system. After applying the pulse to the metal electrode, the capacitive current prevails; therefore, it is difficult to extract the tunneling current, which carries information on the biochemical reactions occurring between the biomarkers in the electrolyte and the self-assembled monolayer (SAM) as the probe peptide system. Instead of waiting until the capacitive current diminishes, and thereby, the tunneling current also decreases, we try to extract the tunneling current in an early stage of the pulse. The method is based on the observation that the capacitive current becomes symmetrized in the positive and negative pulses after introducing the SAM on the metal electrode. When the energy level of the redox molecule is higher than the Fermi level of the metal under zero-bias condition, the tunneling current in the negative pulse can be extracted by subtracting the capacitive current obtained from the positive pulse, where the tunneling current is neglected. The experiment conducted for detecting trypsin as a biomarker shows that the method enhances the sensitivity and the specific-to-nonspecific ratio of the sensor device in the case of the nonspecific protein-abundant electrolyte solution, as evinced by cyclic voltammetry measurements in comparison.

  12. Single event effects and performance predictions for space applications of RISC processors

    Kimbrough, J.R.; Colella, N.J.; Denton, S.M.; Shaeffer, D.L.; Shih, D.; Wilburn, J.W.; Coakley, P.G.; Casteneda, C.; Koga, R.; Clark, D.A.; Ullmann, J.L.

    1994-01-01

    Proton and ion Single Event Phenomena (SEP) tests were performed on 32-b processors including R3000A's from all commercial manufacturers along with the Performance PR3400 family, Integrated Device Technology Inc. 79R3081, LSI Logic Corporation LR33000HC, and Intel i80960MX parts. The microprocessors had acceptable upset rates for operation in a low earth orbit or a lunar mission such as CLEMENTINE with a wide range in proton total dose failure. Even though R3000A devices are 60% smaller in physical area than R3000 devices, there was a 340% increase in device Single Event Upset (SEU) cross section. Software tests of varying complexity demonstrate that registers and other functional blocks using register architecture dominate the cross section. The current approach of giving a single upset cross section can lead to erroneous upset rates depending on the application software

  13. Heavy Ion Irradiation Fluence Dependence for Single-Event Upsets in a NAND Flash Memory

    Chen, Dakai; Wilcox, Edward; Ladbury, Raymond L.; Kim, Hak; Phan, Anthony; Seidleck, Christina; Label, Kenneth

    2016-01-01

    We investigated the single-event effect (SEE) susceptibility of the Micron 16 nm NAND flash, and found that the single-event upset (SEU) cross section varied inversely with cumulative fluence. We attribute the effect to the variable upset sensitivities of the memory cells. Furthermore, the effect impacts only single cell upsets in general. The rate of multiple-bit upsets remained relatively constant with fluence. The current test standards and procedures assume that SEU follow a Poisson process and do not take into account the variability in the error rate with fluence. Therefore, traditional SEE testing techniques may underestimate the on-orbit event rate for a device with variable upset sensitivity.

  14. A Decentralized Current-Sharing Controller Endows Fast Transient Response to Parallel DC-DC Converters

    Wang, Haojie; Han, Minxiao; Han, Renke

    2018-01-01

    This paper proposes a decentralized current-sharing control strategy to endow fast transient response to paralleled DC-DC converters systems, such as DC microgrids or distributed power systems. The proposed controller consist of two main control loops: an external voltage droop control for current......-sharing proposes and an internal current loop. The external droop control loop is designed as a voltage loop with embedded virtual impedance, which avoids the use of a slow voltage loop and a separate extra virtual impedance loop that may limit the system bandwidth. The internal current loop, thanks...... and the proposed embedded-virtual-impedance based I-V droop. In order to compare the dynamic response performances between two droop controllers, their state-space models have been developed and analyzed in this paper. The results show that the dynamic response of the I-V droop control is faster than...

  15. Detailed investigation of current transients from metastable pitting events on stainless steel - the transition to stability

    Pistorius, P.C.; Burstein, G.T.

    1992-01-01

    Current transients which result from metastable pitting events (on Type 304 stainless steel in an acidic solution containing 1 M Cl - ) are presented. A criterion for the stable growth of open hemispherical pits is developed; the criterion states that the product of current density and pit depth must exceed a certain minimum value, to sustain rapid dissolution. Analysis of the transients from metastable pits shows that these pits fall short of this minimum, as do stable pits initially. The growth of these pits thus requires the presence of another barrier to diffusion, which is thought to be a remnant of the passive film; this forms a flawed cover over the pit mouth. When this cover ruptures under the influence of osmotic pressure, the pit repassivates. Pits growing at higher current densities approach the minimum requirement for stable growth more closely. A ''pitting potential'' results from the effect that metastable pits formed at more positive potentials grow at higher current densities, and are thus more likely to grow into stable pits. The effect of potential on the current density does not result from either activation control or ohmic control; rather, the pits grow under diffusion control. A change, with potential, of the type of pit site which can be activated, causes the potential dependence of the distribution of current densities in metastable pits. Although the distribution of current densities changes with potential, each metastable pit grows under diffusion control with a current density which is independent of the potential; this is confirmed by polarisation tests on growing metastable pits

  16. Radiation of transient high-current arcs: energy measurements in the optical range

    Bauchire, J M; Hong, D; Rabat, H; Riquel, G

    2012-01-01

    When no protection is used, the radiation emitted by a high-power electric arc can be dangerous for the eyes and the skin of a person. To ensure effective protection, it is first necessary to know the energy emitted by such arcs. The aim of our work was to experimentally determine the energy emitted by high-current (from 4 to 40 kA) transient arcs, for two different (10 cm and 2 m) lengths and for electrodes in copper or steel. These experiments enabled the radiative energy of the arcs to be quantified and also showed the influence of metal vapors in the spectral distribution of the radiation.

  17. Steady and transient states of a two-phase counter current flow

    Siebert, S.

    1984-06-01

    The aim of this work is to estimate the efficiency of the counter current exchange between a heavy dispersed phase and a continous light phase in a pulse perforated plate column. From an experimental point, hydraulic measurements (retention ratio, droplet size) and residence time measurements (radioactive tracers). The model will be so applied to the calculation of retention ratios in steady conditions then of tracer concentrations in transient conditions. From a numerical point of view a fixed point type iteration then a method Runge Kutta are then adapted [fr

  18. Single Event Upset Studies Using the ATLAS SCT

    Weidberg, A R; The ATLAS collaboration

    2013-01-01

    Single Event Upsets (SEU) are expected to occur during high luminosity running of the ATLAS SemiConductor Tracker (SCT). The SEU cross sections were measured in pion beams with momenta in the range 200 to 465 MeV/c and proton test beams at 24 GeV/c but the extrapolation to LHC conditions is non-trivial because of the range of particle types and momenta. The SEUs studied occur in the \\emph{p-i-n} photodiode and the registers in the ABCD chip. Comparisons between predicted SEU rates and those measured from ATLAS data are presented. The implications for ATLAS operation are discussed.

  19. Single Event Upset Studies Using the ATLAS SCT

    Dafinca, A; The ATLAS collaboration; Weidberg, A R

    2014-01-01

    Single Event Upsets (SEU) are expected to occur during high luminosity running of the ATLAS SemiConductor Tracker (SCT). The SEU cross sections were measured in pion beams with momenta in the range 200 to 465 MeV/c and proton test beams at 24 GeV/c but the extrapolation to LHC conditions is non-trivial because of the range of particle types and momenta. The SEUs studied occur in the p-i-n photodiode and the registers in the ABCD chip. Comparisons between predicted SEU rates and those measured from ATLAS data are presented. The implications for ATLAS operation are discussed

  20. Single-event burnout of power bipolar junction transistors

    Titus, J.L.; Johnson, G.H.; Schrimpf, R.D.; Galloway, K.F.

    1991-01-01

    Experimental evidence of single-event burnout of power bipolar junctions transistors (BJTs) is reported for the first time. Several commercial power BJTs were characterized in a simulated cosmic ray environment using mono-energetic ions at the tandem Van de Graaff accelerator facility at Brookhaven National Laboratory. Most of the device types exposed to this simulated environment exhibited burnout behavior. In this paper the experimental technique, data, and results are presented, while a qualitative model is used to help explain those results and trends observed in this experiment

  1. Thermomechanical Stresses Analysis of a Single Event Burnout Process

    Tais, Carlos E.; Romero, Eduardo; Demarco, Gustavo L.

    2009-06-01

    This work analyzes the thermal and mechanical effects arising in a power Diffusion Metal Oxide Semiconductor (DMOS) during a Single Event Burnout (SEB) process. For studying these effects we propose a more detailed simulation structure than the previously used by other authors, solving the mathematical models by means of the Finite Element Method. We use a cylindrical heat generation region, with 5 W, 10 W, 50 W and 100 W for emulating the thermal phenomena occurring during SEB processes, avoiding the complexity of the mathematical treatment of the ion-semiconductor interaction.

  2. Effect of load transients on SOFC operation—current reversal on loss of load

    Gemmen, Randall S.; Johnson, Christopher D.

    The dynamics of solid oxide fuel cell (SOFC) operation have been considered previously, but mainly through the use of one-dimensional codes applied to co-flow fuel cell systems. In this paper several geometries are considered, including cross-flow, co-flow, and counter-flow. The details of the model are provided, and the model is compared with some initial experimental data. For parameters typical of SOFC operation, a variety of transient cases are investigated, including representative load increase and decrease and system shutdown. Of particular note for large load decrease conditions (e.g., shutdown) is the occurrence of reverse current over significant portions of the cell, starting from the moment of load loss up to the point where equilibrated conditions again provide positive current. Consideration is given as to when such reverse current conditions might most significantly impact the reliability of the cell.

  3. Automatic Single Event Effects Sensitivity Analysis of a 13-Bit Successive Approximation ADC

    Márquez, F.; Muñoz, F.; Palomo, F. R.; Sanz, L.; López-Morillo, E.; Aguirre, M. A.; Jiménez, A.

    2015-08-01

    This paper presents Analog Fault Tolerant University of Seville Debugging System (AFTU), a tool to evaluate the Single-Event Effect (SEE) sensitivity of analog/mixed signal microelectronic circuits at transistor level. As analog cells can behave in an unpredictable way when critical areas interact with the particle hitting, there is a need for designers to have a software tool that allows an automatic and exhaustive analysis of Single-Event Effects influence. AFTU takes the test-bench SPECTRE design, emulates radiation conditions and automatically evaluates vulnerabilities using user-defined heuristics. To illustrate the utility of the tool, the SEE sensitivity of a 13-bits Successive Approximation Analog-to-Digital Converter (ADC) has been analysed. This circuit was selected not only because it was designed for space applications, but also due to the fact that a manual SEE sensitivity analysis would be too time-consuming. After a user-defined test campaign, it was detected that some voltage transients were propagated to a node where a parasitic diode was activated, affecting the offset cancelation, and therefore the whole resolution of the ADC. A simple modification of the scheme solved the problem, as it was verified with another automatic SEE sensitivity analysis.

  4. Transient recovery voltage analysis for various current breaking mathematical models: shunt reactor and capacitor bank de-energization study

    Oramus Piotr

    2015-09-01

    Full Text Available Electric arc is a complex phenomenon occurring during the current interruption process in the power system. Therefore performing digital simulations is often necessary to analyse transient conditions in power system during switching operations. This paper deals with the electric arc modelling and its implementation in simulation software for transient analyses during switching conditions in power system. Cassie, Cassie-Mayr as well as Schwarz-Avdonin equations describing the behaviour of the electric arc during the current interruption process have been implemented in EMTP-ATP simulation software and presented in this paper. The models developed have been used for transient simulations to analyse impact of the particular model and its parameters on Transient Recovery Voltage in different switching scenarios: during shunt reactor switching-off as well as during capacitor bank current switching-off. The selected simulation cases represent typical practical scenarios for inductive and capacitive currents breaking, respectively.

  5. Transient interaction model of electromagnetic field generated by lightning current pulses and human body

    Iváncsy, T; Kiss, I; Tamus, Z Á; Szücs, L

    2015-01-01

    The lightning current generates time-varying magnetic field near the down-conductor and the down-conductors are mounted on the wall of the buildings where residential places might be situated. It is well known that the rapidly changing magnetic fields can generate dangerous eddy currents in the human body.The higher duration and gradient of the magnetic field can cause potentially life threatening cardiac stimulation. The coupling mechanism between the electromagnetic field and the human body is based on a well-known physical phenomena (e.g. Faradays law of induction). However, the calculation of the induced current is very complicated because the shape of the organs is complex and the determination of the material properties of living tissues is difficult, as well. Our previous study revealed that the cardiac stimulation is independent of the rising time of the lightning current and only the peak of the current counts.In this study, the authors introduce an improved model of the interaction of electromagnetic fields of lighting current near down-conductor and human body. Our previous models are based on the quasi stationer field calculations, the new improved model is a transient model. This is because the magnetic field around the down-conductor and in the human body can be determined more precisely, therefore the dangerous currents in the body can be estimated. (paper)

  6. Re-Verification of the IRHN57133SE and IRHN57250SE for Single Event Gate Rupture and Single Event Burnout

    Scheick, Leif

    2010-01-01

    The vertical metal oxide semiconductor field-effect transistor (MOSFET) is a widely used power transistor onboard a spacecraft. The MOSFET is typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single event gate rupture (SEGR) or single event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. These radiation hardened devices are not immune to SEGR or SEB but, rather, can exhibit them at a much more damaging ion than their non-radiation hardened counterparts. See [1] through [5] for more information.This effort was to investigate the SEGR and SEB responses of two power MOSFETs from IR(the IRHN57133SE and the IRHN57250SE) that have recently been produced on a new fabrication line. These tests will serve as a limited verification of these parts, but it is acknowledged that further testing on the respective parts may be needed for some mission profiles.

  7. Management of high current transients in the CWDD Injector 200 kV power system

    Carwardine, J.A.; Pile, G.; Zinneman, T.E.

    1993-01-01

    The injector for the Continuous Wave Deuterium Demonstrator is designed to deliver a high current CW negative deuterium ion beam at an energy of 200 keV to a Radio Frequency Quadrupole. The injector comprises a volume ion source, triode accelerator, high-power electron traps and low-energy beam transport with a single focusing solenoid. Some 75 Joules of energy are stored in stray capacitance around the high voltage system and discharged in a few microseconds following an injector breakdown. In order to limit damage to the accelerator grids, a magnetic snubber is incorporated to absorb most of the energy. Nevertheless, large current transients flow around the system as a result of an injector breakdown; these have frequently damaged power components and caused spurious behavior in many of the supporting systems. The analytical and practical approaches taken to minimize the effects of these transients are described. Injector breakdowns were simulated using an air spark gap and measurements made using standard EMC test techniques. The power circuit was modeled using an electrical simulation code; good agreement was reached between the model and measured results

  8. Characterization of transient discharges under atmospheric-pressure conditions applying nitrogen photoemission and current measurements

    Keller, Sandra; Rajasekaran, Priyadarshini; Bibinov, Nikita; Awakowicz, Peter

    2012-01-01

    The plasma parameters such as electron distribution function and electron density of three atmospheric-pressure transient discharges namely filamentary and homogeneous dielectric barrier discharges in air, and the spark discharge of an argon plasma coagulation (APC) system are determined. A combination of numerical simulation as well as diagnostic methods including current measurement and optical emission spectroscopy (OES) based on nitrogen emissions is used. The applied methods supplement each other and resolve problems, which arise when these methods are used individually. Nitrogen is used as a sensor gas and is admixed in low amount to argon for characterizing the APC discharge. Both direct and stepwise electron-impact excitation of nitrogen emissions are included in the plasma-chemical model applied for characterization of these transient discharges using OES where ambiguity arises in the determination of plasma parameters under specific discharge conditions. It is shown that the measured current solves this problem by providing additional information useful for the determination of discharge-specific plasma parameters. (paper)

  9. Simulation of the transient eddy current measurement for the characterization of depth and conductivity of a plate

    Cheng, Weiying; Komura, Ichiro

    2008-01-01

    A transient eddy current measurement method is presented to determine the thickness and conductivity of a conductive plate. The conductive plate is induced by an air-cored coil, the magnetic flux density along the axial is measured and the various signals corresponding to plates with different thickness and conductivity are calculated using a 3D transient eddy current simulator. Characteristic features are obtained from the transient response. A similarity-based modeling method is utilized in this study to estimate the thickness and conductivity of the conductive plate. (author)

  10. Can tokamaks PFC survive a single event of any plasma instabilities?

    Hassanein, A., E-mail: hassanein@purdue.edu [Center for Materials under Extreme Environment, School of Nuclear Engineering, Purdue University, 400 Central Drive, West Lafayette, IN 47907 (United States); Sizyuk, V.; Miloshevsky, G.; Sizyuk, T. [Center for Materials under Extreme Environment, School of Nuclear Engineering, Purdue University, 400 Central Drive, West Lafayette, IN 47907 (United States)

    2013-07-15

    Plasma instability events such as disruptions, edge-localized modes (ELMs), runaway electrons (REs), and vertical displacement events (VDEs) are continued to be serious events and most limiting factors for successful tokamak reactor concept. The plasma-facing components (PFCs), e.g., wall, divertor, and limited surfaces of a tokamak as well as coolant structure materials are subjected to intense particle and heat loads and must maintain a clean and stable surface environment among them and the core/edge plasma. Typical ITER transient events parameters are used for assessing the damage from these four different instability events. HEIGHTS simulation showed that a single event of a disruption, giant ELM, VDE, or RE can cause significant surface erosion (melting and vaporization) damage to PFC, nearby components, and/or structural materials (VDE, RE) melting and possible burnout of coolant tubes that could result in shut down of reactor for extended repair time.

  11. Can tokamaks PFC survive a single event of any plasma instabilities?

    Hassanein, A.; Sizyuk, V.; Miloshevsky, G.; Sizyuk, T.

    2013-07-01

    Plasma instability events such as disruptions, edge-localized modes (ELMs), runaway electrons (REs), and vertical displacement events (VDEs) are continued to be serious events and most limiting factors for successful tokamak reactor concept. The plasma-facing components (PFCs), e.g., wall, divertor, and limited surfaces of a tokamak as well as coolant structure materials are subjected to intense particle and heat loads and must maintain a clean and stable surface environment among them and the core/edge plasma. Typical ITER transient events parameters are used for assessing the damage from these four different instability events. HEIGHTS simulation showed that a single event of a disruption, giant ELM, VDE, or RE can cause significant surface erosion (melting and vaporization) damage to PFC, nearby components, and/or structural materials (VDE, RE) melting and possible burnout of coolant tubes that could result in shut down of reactor for extended repair time.

  12. Can tokamaks PFC survive a single event of any plasma instabilities?

    Hassanein, A.; Sizyuk, V.; Miloshevsky, G.; Sizyuk, T.

    2013-01-01

    Plasma instability events such as disruptions, edge-localized modes (ELMs), runaway electrons (REs), and vertical displacement events (VDEs) are continued to be serious events and most limiting factors for successful tokamak reactor concept. The plasma-facing components (PFCs), e.g., wall, divertor, and limited surfaces of a tokamak as well as coolant structure materials are subjected to intense particle and heat loads and must maintain a clean and stable surface environment among them and the core/edge plasma. Typical ITER transient events parameters are used for assessing the damage from these four different instability events. HEIGHTS simulation showed that a single event of a disruption, giant ELM, VDE, or RE can cause significant surface erosion (melting and vaporization) damage to PFC, nearby components, and/or structural materials (VDE, RE) melting and possible burnout of coolant tubes that could result in shut down of reactor for extended repair time

  13. Physiological roles of the transient outward current Ito in normal and diseased hearts

    Cordeiro, Jonathan M.; Callø, Kirstine; Aschar-Sobbi, Roozbeh

    2016-01-01

    The Ca2+-independent transient outward K+ current (Ito) plays a critical role in underlying phase 1 of repolarization of the cardiac action potential and, as a result, is central to modulating excitation-contraction coupling and propensity for arrhythmia. Additionally, Ito and its molecular...... potential and the mechanisms by which Ito modulates excitation-contraction coupling. We also describe the effects of mutations in the subunits constituting the Ito channel as well as the role of Ito in the failing myocardium. Finally, we review pharmacological modulation of Ito and discuss the evidence...... constituents are consistently reduced in cardiac hypertrophy and heart failure. In this review, we discuss the physiological role of Ito as well as the molecular basis of this current in human and canine hearts, in which Ito has been thoroughly studied. In particular, we discuss the role of Ito in the action...

  14. Statistical interpretation of transient current power-law decay in colloidal quantum dot arrays

    Sibatov, R T, E-mail: ren_sib@bk.ru [Ulyanovsk State University, 432000, 42 Leo Tolstoy Street, Ulyanovsk (Russian Federation)

    2011-08-01

    A new statistical model of the charge transport in colloidal quantum dot arrays is proposed. It takes into account Coulomb blockade forbidding multiple occupancy of nanocrystals and the influence of energetic disorder of interdot space. The model explains power-law current transients and the presence of the memory effect. The fractional differential analogue of the Ohm law is found phenomenologically for nanocrystal arrays. The model combines ideas that were considered as conflicting by other authors: the Scher-Montroll idea about the power-law distribution of waiting times in localized states for disordered semiconductors is applied taking into account Coulomb blockade; Novikov's condition about the asymptotic power-law distribution of time intervals between successful current pulses in conduction channels is fulfilled; and the carrier injection blocking predicted by Ginger and Greenham (2000 J. Appl. Phys. 87 1361) takes place.

  15. Statistical interpretation of transient current power-law decay in colloidal quantum dot arrays

    Sibatov, R T

    2011-01-01

    A new statistical model of the charge transport in colloidal quantum dot arrays is proposed. It takes into account Coulomb blockade forbidding multiple occupancy of nanocrystals and the influence of energetic disorder of interdot space. The model explains power-law current transients and the presence of the memory effect. The fractional differential analogue of the Ohm law is found phenomenologically for nanocrystal arrays. The model combines ideas that were considered as conflicting by other authors: the Scher-Montroll idea about the power-law distribution of waiting times in localized states for disordered semiconductors is applied taking into account Coulomb blockade; Novikov's condition about the asymptotic power-law distribution of time intervals between successful current pulses in conduction channels is fulfilled; and the carrier injection blocking predicted by Ginger and Greenham (2000 J. Appl. Phys. 87 1361) takes place.

  16. Transient current in a quantum dot asymmetrically coupled to metallic leads

    Goker, A; Friedman, B A; Nordlander, P

    2007-01-01

    The time-dependent non-crossing approximation is used to study the transient current in a single-electron transistor attached asymmetrically to two leads following a sudden change in the energy of the dot level. We show that for asymmetric coupling, sharp features in the density of states of the leads can induce oscillations in the current through the dot. These oscillations persist to much longer timescales than the timescale for charge fluctuations. The amplitude of the oscillations increases as the temperature or source-drain bias across the dot is reduced and saturates for values below the Kondo temperature. We discuss the microscopic origin of these oscillations and comment on the possibility for their experimental detection

  17. Calcium Transient and Sodium-Calcium Exchange Current in Human versus Rabbit Sinoatrial Node Pacemaker Cells

    Arie O. Verkerk

    2013-01-01

    Full Text Available There is an ongoing debate on the mechanism underlying the pacemaker activity of sinoatrial node (SAN cells, focusing on the relative importance of the “membrane clock” and the “Ca2+ clock” in the generation of the small net membrane current that depolarizes the cell towards the action potential threshold. Specifically, the debate centers around the question whether the membrane clock-driven hyperpolarization-activated current, If, which is also known as the “funny current” or “pacemaker current,” or the Ca2+ clock-driven sodium-calcium exchange current, INaCa, is the main contributor to diastolic depolarization. In our contribution to this journal’s “Special Issue on Cardiac Electrophysiology,” we present a numerical reconstruction of If and INaCa in isolated rabbit and human SAN pacemaker cells based on experimental data on action potentials, If, and intracellular calcium concentration ([Ca2+]i that we have acquired from these cells. The human SAN pacemaker cells have a smaller If, a weaker [Ca2+]i transient, and a smaller INaCa than the rabbit cells. However, when compared to the diastolic net membrane current, INaCa is of similar size in human and rabbit SAN pacemaker cells, whereas If is smaller in human than in rabbit cells.

  18. Single event upset threshold estimation based on local laser irradiation

    Chumakov, A.I.; Egorov, A.N.; Mavritsky, O.B.; Yanenko, A.V.

    1999-01-01

    An approach for estimation of ion-induced SEU threshold based on local laser irradiation is presented. Comparative experiment and software simulation research were performed at various pulse duration and spot size. Correlation of single event threshold LET to upset threshold laser energy under local irradiation was found. The computer analysis of local laser irradiation of IC structures was developed for SEU threshold LET estimation. The correlation of local laser threshold energy with SEU threshold LET was shown. Two estimation techniques were suggested. The first one is based on the determination of local laser threshold dose taking into account the relation of sensitive area to local irradiated area. The second technique uses the photocurrent peak value instead of this relation. The agreement between the predicted and experimental results demonstrates the applicability of this approach. (authors)

  19. Heavy ion and proton-induced single event multiple upset

    Reed, R.A.; Carts, M.A.; Marshall, P.W.

    1997-01-01

    Individual ionizing heavy ion events are shown to cause two or more adjacent memory cells to change logic states in a high density CMOS SRAM. A majority of the upsets produced by normally incident heavy ions are due to single-particle events that causes a single cell to upset. However, for grazing angles a majority of the upsets produced by heavy-ion irradiation are due to single-particle events that cause two or more cells to change logic states. Experimental evidence of a single proton-induced spallation reaction that causes two adjacent memory cells to change logic states is presented. Results from a dual volume Monte-Carlo simulation code for proton-induced single-event multiple upsets are within a factor of three of experimental data for protons at normal incidence and 70 degrees

  20. 3-D transient eddy current calculations for the FELIX cylinder experiments

    Davey, K.R.; Turner, L.R.

    1986-12-01

    The three-dimensional eddy current transient field problem is formulated first using the U-V method. This method breaks the vector Helmholtz equation into two scalar Helmholtz equations. Null field integral equations and the appropriate boundary conditions are used to set up an identification matrix which is independent of null field point locations. Embedded in the identification matrix are the unknown eigenvalues of the problem representing its impulse response in time. These eigenvalues are found by equating the determinant of the identification matrix to zero. When this initial forcing function is Fourier decomposed into its spatial harmonics, each Fourier component can be associated with a unique eigenvalue by this technique. The true transient solution comes through a convolution of the impulse response so obtained with the particular external field decay governing the problem at hand. The technique is applied to the FELIX cylinder experiments; computed results are compared to data. A pseudoanalytic confirmation of the eigenvalues so obtained is formulated to validate the procedure

  1. Validation of an "Intelligent Mouthguard" Single Event Head Impact Dosimeter.

    Bartsch, Adam; Samorezov, Sergey; Benzel, Edward; Miele, Vincent; Brett, Daniel

    2014-11-01

    Dating to Colonel John Paul Stapp MD in 1975, scientists have desired to measure live human head impacts with accuracy and precision. But no instrument exists to accurately and precisely quantify single head impact events. Our goal is to develop a practical single event head impact dosimeter known as "Intelligent Mouthguard" and quantify its performance on the benchtop, in vitro and in vivo. In the Intelligent Mouthguard hardware, limited gyroscope bandwidth requires an algorithm-based correction as a function of impact duration. After we apply gyroscope correction algorithm, Intelligent Mouthguard results at time of CG linear acceleration peak correlate to the Reference Hybrid III within our tested range of pulse durations and impact acceleration profiles in American football and Boxing in vitro tests: American football, IMG=1.00REF-1.1g, R2=0.99; maximum time of peak XYZ component imprecision 3.6g and 370 rad/s2; maximum time of peak azimuth and elevation imprecision 4.8° and 2.9°; maximum average XYZ component temporal imprecision 3.3g and 390 rad/s2. Boxing, IMG=1.00REF-0.9 g, R2=0.99, R2=0.98; maximum time of peak XYZ component imprecision 3.9 g and 390 rad/s2, maximum time of peak azimuth and elevation imprecision 2.9° and 2.1°; average XYZ component temporal imprecision 4.0 g and 440 rad/s2. In vivo Intelligent Mouthguard true positive head impacts from American football players and amateur boxers have temporal characteristics (first harmonic frequency from 35 Hz to 79 Hz) within our tested benchtop (first harmonic frequencyIntelligent Mouthguard qualifies as a single event dosimeter in American football and Boxing.

  2. Single event effect testing of the Intel 80386 family and the 80486 microprocessor

    Moran, A.; LaBel, K.; Gates, M.; Seidleck, C.; McGraw, R.; Broida, M.; Firer, J.; Sprehn, S.

    1996-01-01

    The authors present single event effect test results for the Intel 80386 microprocessor, the 80387 coprocessor, the 82380 peripheral device, and on the 80486 microprocessor. Both single event upset and latchup conditions were monitored

  3. Photo-induced current transient spectroscopy for high-resistivity neutron-transmutation-doped silicon

    Tokuda, Yutaka; Inoue, Yajiro; Usami, Akira

    1987-01-01

    Defects in high-resistivity neutron-transmutation-doped (NTD) silicon prior to annealing were studied by photo-induced current transient spectroscopy (PICTS). The thermal-neutron fluence was 9.5 x 10 17 cm -2 to give a resistivity of about 30 Ω after annealing, and the fast-neutron fluence was 9.5 x 10 16 cm -2 . Four traps with thermal emission activation energies of 0.15, 0.41. 0.47 and 0.50 eV were observed in NTD silicon. A trap with the thermal emission activation energy of 0.15 eV was considered to correspond to the divacancy. Although the clustered nature of the defects was observed, PICTS measurements suggest that the material state of high-resistivity NTD silicon is still crystalline and not amorphous. (author)

  4. Origin of switching current transients in TIPS-pentacene based organic thin-film transistor with polymer dielectric

    Singh, Subhash; Mohapatra, Y. N.

    2017-06-01

    We have investigated switch-on drain-source current transients in fully solution-processed thin film transistors based on 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) using cross-linked poly-4-vinylphenol as a dielectric. We show that the nature of the transient (increasing or decreasing) depends on both the temperature and the amplitude of the switching pulse at the gate. The isothermal transients are analyzed spectroscopically in a time domain to extract the degree of non-exponentiality and its possible origin in trap kinetics. We propose a phenomenological model in which the exchange of electrons between interfacial ions and traps controls the nature of the drain current transients dictated by the Fermi level position. The origin of interfacial ions is attributed to the essential fabrication step of UV-ozone treatment of the dielectric prior to semiconductor deposition.

  5. Influence of Paralleling Dies and Paralleling Half-Bridges on Transient Current Distribution in Multichip Power Modules

    Li, Helong; Zhou, Wei; Wang, Xiongfei

    2018-01-01

    This paper addresses the transient current distribution in the multichip half-bridge power modules, where two types of paralleling connections with different current commutation mechanisms are considered: paralleling dies and paralleling half-bridges. It reveals that with paralleling dies, both t...

  6. Single-Event Transient Testing of Low Dropout PNP Series Linear Voltage Regulators

    Adell, Philippe; Allen, Gregory

    2013-01-01

    As demand for high-speed, on-board, digital-processing integrated circuits on spacecraft increases (field-programmable gate arrays and digital signal processors in particular), the need for the next generation point-of-load (POL) regulator becomes a prominent design issue. Shrinking process nodes have resulted in core rails dropping to values close to 1.0 V, drastically reducing margin to standard switching converters or regulators that power digital ICs. The goal of this task is to perform SET characterization of several commercial POL converters, and provide a discussion of the impact of these results to state-of-the-art digital processing IC through laser and heavy ion testing

  7. Approaches to proton single-event rate calculations

    Petersen, E.L.

    1996-01-01

    This article discusses the fundamentals of proton-induced single-event upsets and of the various methods that have been developed to calculate upset rates. Two types of approaches are used based on nuclear-reaction analysis. Several aspects can be analyzed using analytic methods, but a complete description is not available. The paper presents an analytic description for the component due to elastic-scattering recoils. There have been a number of studies made using Monte Carlo methods. These can completely describe the reaction processes, including the effect of nuclear reactions occurring outside the device-sensitive volume. They have not included the elastic-scattering processes. The article describes the semiempirical approaches that are most widely used. The quality of previous upset predictions relative to space observations is discussed and leads to comments about the desired quality of future predictions. Brief sections treat the possible testing limitation due to total ionizing dose effects, the relationship of proton and heavy-ion upsets, upsets due to direct proton ionization, and relative proton and cosmic-ray upset rates

  8. The single event upset environment for avionics at high latitude

    Sims, A.J.; Dyer, C.S.; Peerless, C.L.; Farren, J.

    1994-01-01

    Modern avionic systems for civil and military applications are becoming increasingly reliant upon embedded microprocessors and associated memory devices. The phenomenon of single event upset (SEU) is well known in space systems and designers have generally been careful to use SEU tolerant devices or to implement error detection and correction (EDAC) techniques where appropriate. In the past, avionics designers have had no reason to consider SEU effects but is clear that the more prevalent use of memory devices combined with increasing levels of IC integration will make SEU mitigation an important design consideration for future avionic systems. To this end, it is necessary to work towards producing models of the avionics SEU environment which will permit system designers to choose components and EDAC techniques which are based on predictions of SEU rates correct to much better than an order of magnitude. Measurements of the high latitude SEU environment at avionics altitude have been made on board a commercial airliner. Results are compared with models of primary and secondary cosmic rays and atmospheric neutrons. Ground based SEU tests of static RAMs are used to predict rates in flight

  9. Transcranial direct current stimulation transiently increases the blood-brain barrier solute permeability in vivo

    Shin, Da Wi; Khadka, Niranjan; Fan, Jie; Bikson, Marom; Fu, Bingmei M.

    2016-03-01

    Transcranial Direct Current Stimulation (tDCS) is a non-invasive electrical stimulation technique investigated for a broad range of medical and performance indications. Whereas prior studies have focused exclusively on direct neuron polarization, our hypothesis is that tDCS directly modulates endothelial cells leading to transient changes in blood-brain-barrier (BBB) permeability (P) that are highly meaningful for neuronal activity. For this, we developed state-of-the-art imaging and animal models to quantify P to various sized solutes after tDCS treatment. tDCS was administered using a constant current stimulator to deliver a 1mA current to the right frontal cortex of rat (approximately 2 mm posterior to bregma and 2 mm right to sagittal suture) to obtain similar physiological outcome as that in the human tDCS application studies. Sodium fluorescein (MW=376), or FITC-dextrans (20K and 70K), in 1% BSA mammalian Ringer was injected into the rat (SD, 250-300g) cerebral circulation via the ipsilateral carotid artery by a syringe pump at a constant rate of ~3 ml/min. To determine P, multiphoton microscopy with 800-850 nm wavelength laser was applied to take the images from the region of interest (ROI) with proper microvessels, which are 100-200 micron below the pia mater. It shows that the relative increase in P is about 8-fold for small solute, sodium fluorescein, ~35-fold for both intermediate sized (Dex-20k) and large (Dex-70k) solutes, 10 min after 20 min tDCS pretreatment. All of the increased permeability returns to the control after 20 min post treatment. The results confirmed our hypothesis.

  10. Use of time space Green's functions in the computation of transient eddy current fields

    Davey, K.; Turner, L.

    1988-01-01

    The utility of integral equations to solve eddy current problems has been borne out by numerous computations in the past few years, principally in sinusoidal steady-state problems. This paper attempts to examine the applicability of the integral approaches in both time and space for the more generic transient problem. The basic formulation for the time space Green's function approach is laid out. A technique employing Gauss-Laguerre integration is employed to realize the temporal solution, while Gauss--Legendre integration is used to resolve the spatial field character. The technique is then applied to the fusion electromagnetic induction experiments (FELIX) cylinder experiments in both two and three dimensions. It is found that quite accurate solutions can be obtained using rather coarse time steps and very few unknowns; the three-dimensional field solution worked out in this context used basically only four unknowns. The solution appears to be somewhat sensitive to the choice of time step, a consequence of a numerical instability imbedded in the Green's function near the origin

  11. The formation of metallic plasmas in transient capillary discharges at high current

    Wyndham, E S; Favre, M; Aliaga-Rossel, R

    2006-01-01

    We report observations of the formation of a metallic plasma in a high aspect ratio z-pinch confined within a ceramic capillary. A series of experiments on different capillary geometries was undertaken in which titanium metal rings were used to promote the formation of a titanium plasma through preferential ablation. In an initial vacuum a titanium seed plasma is formed in the hollow cathode (HC) volume by a low energy laser spark. This pre-ionizing plasma is assisted in its expansion into the z-pinch volume by the electron beams generated by a pre-ionizing discharge in the capillary, due to the HC effect. Further intense e-beam activity occurs on applying the main driver current to the capillary electrodes before the discharge impedance abruptly drops to give rise to an ensuing high current z-pinch. A segmented titanium ring structure within the capillary promotes metal ablation. The discharges are performed in tubes of 60 to 110 mm length and 3 and 5 mm effective internal diameter. The main discharge current is provided from a small pulsed power switched coaxial line, at up to 150 kA. The generator may be configured to deliver two different rates of current rise and this is found to have a significant effect on the plasma dynamics. The plasma properties are obtained from observations of the axial x-ray emission. The diagnostics used are filtered Si diodes, filtered time-resolved multi-pinhole camera images and the time resolved soft x-ray spectrum from 3 to 20 nm. While a single species metal plasma is not obtained, a very significant proportion of Ti is achieved in the higher rate of current rise configuration. The fraction of Ti diminishes for the longest length discharges and for the larger diameter tube diameter, as does the observed z-pinch uniformity. There is a weak dependance of the electron temperature with tube geometry, but the plasma density falls substantially in the longer discharges. This coincides with diminished effectiveness of the transient HC

  12. Strain and thermally induced magnetic dynamics and spin current in magnetic insulators subject to transient optical grating

    Wang, Xi-Guang; Chotorlishvili, Levan; Berakdar, Jamal

    2017-07-01

    We analyze the magnetic dynamics and particularlythe spin current in an open-circuit ferromagnetic insulator irradiated by two intense, phase-locked laser pulses. The interference of the laser beams generates a transient optical grating and a transient spatio-temporal temperature distribution. Both effects lead to elastic and heat waves at the surface and into the bulk of the sample. The strain induced spin current as well as the thermally induced magnonic spin current are evaluated numerically on the basis of micromagnetic simulations using solutions of the heat equation. We observe that the thermo-elastically induced magnonic spin current propagates on a distance larger than the characteristic size of thermal profile, an effect useful for applications in remote detection of spin caloritronics phenomena. Our findings point out that exploiting strain adds a new twist to heat-assisted magnetic switching and spin-current generation for spintronic applications.

  13. Experimental investigation of the effect of titanium dioxide and barium titanate additives on DC transient currents in low density polyethylene

    Khalil, M.S; Henk, Peter O; Henriksen, Mogens

    1988-01-01

    The effect of titanium dioxide as a semiconductive additive and barium titanate as a highly polar additive on the DC transient currents in low-density polyethylene is investigated. Experiments were made using thick specimens under a high electric field (>25×106 V/m) and a constant temperature of 40...

  14. Development of Guidelines for Use of Proton Single-Event Test Data to Bound Single-Event Effect Susceptibility Due to Light Ions

    National Aeronautics and Space Administration — Conventional methods for Single-Event Effects (SEE) Hardness Assurance have proven difficult to adapt to Explorer, Cubesat and other risk tolerant platforms with...

  15. Single event effects induced by 15.14 MeV/u 136Xe ions

    Hou Mingdong; Zhang Qingxiang; Liu Jie; Wang Zhiguang; Jin Yunfan; Zhu Zhiyong; Zhen Honglou; Liu Changlong; Chen Xiaoxi; Wei Xinguo; Zhang Lin; Fan Youcheng; Zhu Zhourong; Zhang Yiting

    2002-01-01

    Single event effects induced by 15.14 MeV/u 136 Xe ions in different batches of 32k x 8 bits static random access memory are studied. The incident angle dependences of the cross sections for single event upset and single event latch up are presented. The SEE cross sections are plotted versus energy loss instead of linear energy transfer value in sensitive region. The depth of sensitive volume and thickness of 'dead' layer above the sensitive volume are estimated

  16. The Effects of Low Dose-Rate Ionizing Radiation on the Shapes of Transients in the LM124 Operational Amplifier

    Buchner, Stephen; McMorrow, Dale; Roche, Nicholas; Dusseau, Laurent; Pease, Ron L.

    2008-01-01

    Shapes of single event transients (SETs) in a linear bipolar circuit (LM124) change with exposure to total ionizing dose (TID) radiation. SETs shape changes are a direct consequence of TID-induced degradation of bipolar transistor gain. A reduction in transistor gain causes a reduction in the drive current of the current sources in the circuit, and it is the lower drive current that most affects the shapes of large amplitude SETs.

  17. Position sensitive regions in a generic radiation sensor based on single event upsets in dynamic RAMs

    Darambara, D.G.; Spyrou, N.M.

    1997-01-01

    Modern integrated circuits are highly complex systems and, as such, are susceptible to occasional failures. Semiconductor memory devices, particularly dynamic random access memories (dRAMs), are subject to random, transient single event upsets (SEUs) created by energetic ionizing radiation. These radiation-induced soft failures in the stored data of silicon based memory chips provide the foundation for a new, highly efficient, low cost generic radiation sensor. The susceptibility and the detection efficiency of a given dRAM device to SEUs is a complicated function of the circuit design and geometry, the operating conditions and the physics of the charge collection mechanisms involved. Typically, soft error rates measure the cumulative response of all sensitive regions of the memory by broad area chip exposure in ionizing radiation environments. However, this study shows that many regions of a dynamic memory are competing charge collection centres having different upset thresholds. The contribution to soft fails from discrete regions or individual circuit elements of the memory device is unambiguously separated. Hence the use of the dRAM as a position sensitive radiation detector, with high spatial resolution, is assessed and demonstrated. (orig.)

  18. The transient outward current in mice lacking the potassium channel gene Kv1.4

    London, Barry; Wang, Dao W; Hill, Joseph A; Bennett, Paul B

    1998-01-01

    The transient outward current (Ito) plays a prominent role in the repolarization phase of the cardiac action potential. Several K+ channel genes, including Kv1.4, are expressed in the heart, produce rapidly inactivating currents when heterologously expressed, and may be the molecular basis of Ito.We engineered mice homozygous for a targeted disruption of the K+ channel gene Kv1.4 and compared Ito in wild-type (Kv1.4+/+), heterozygous (Kv1.4+/-) and homozygous ‘knockout’ (Kv1.4−/−) mice. Kv1.4 RNA was truncated in Kv1.4−/− mice and protein expression was absent.Adult myocytes isolated from Kv1.4+/+, Kv1.4+/− and Kv1.4−/− mice had large rapidly inactivating outward currents. The peak current densities at 60 mV (normalized by cellular capacitance, in pA pF−1; means ± s.e.m.) were 53.8 ± 5.3, 45.3 ± 2.2 and 44.4 ± 2.8 in cells from Kv1.4+/+, Kv1.4+/− and Kv1.4−/− mice, respectively (P mice.The voltage dependence and time course of inactivation were not changed by targeted disruption of Kv1.4. The mean best-fitting V½ (membrane potential at 50 % inactivation) values for myocytes from Kv1.4 +/+, Kv1.4+/− and Kv1.4−/− mice were -53.5 ± 3.7, -51.1 ± 2.6 and -54.2 ± 2.4 mV, respectively. The slope factors (k) were -10.1 ± 1.4, -8.8 ± 1.4 and -9.5 ± 1.2 mV, respectively. The fast time constants for development of inactivation at -30 mV were 27.8 ± 2.2, 26.2 ± 5.1 and 19.6 ± 2.1 ms in Kv1.4+/+, Kv1.4+/− and Kv1.4−/− myocytes, respectively. At +30 mV, they were 35.5 ± 2.6, 30.0 ± 2.1 and 28.7 ± 1.6 ms, respectively. The time constants for the rapid phase of recovery from inactivation at -80 mV were 32.5 ± 8.2, 23.3 ± 1.8 and 39.0 ± 3.7 ms, respectively.Nearly the entire inactivating component as well as more than 60 % of the steady-state outward current was eliminated by 1 mm 4-aminopyridine in Kv1.4+/+, Kv1.4+/− and Kv1.4−/− myocytes.Western blot analysis of heart membrane extracts showed no significant

  19. Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

    Jia Yunpeng; Su Hongyuan; Hu Dongqing; Wu Yu; Jin Rui

    2016-01-01

    The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. (paper)

  20. Current and anticipated use of thermal-hydraulic codes for BWR transient and accident analyses in Japan

    Arai, Kenji; Ebata, Shigeo [Toshiba Corp., Yokohama (Japan)

    1997-07-01

    This paper summarizes the current and anticipated use of the thermal-hydraulic and neutronic codes for the BWR transient and accident analyses in Japan. The codes may be categorized into the licensing codes and the best estimate codes for the BWR transient and accident analyses. Most of the licensing codes have been originally developed by General Electric. Some codes have been updated based on the technical knowledge obtained in the thermal hydraulic study in Japan, and according to the BWR design changes. The best estimates codes have been used to support the licensing calculations and to obtain the phenomenological understanding of the thermal hydraulic phenomena during a BWR transient or accident. The best estimate codes can be also applied to a design study for a next generation BWR to which the current licensing model may not be directly applied. In order to rationalize the margin included in the current BWR design and develop a next generation reactor with appropriate design margin, it will be required to improve the accuracy of the thermal-hydraulic and neutronic model. In addition, regarding the current best estimate codes, the improvement in the user interface and the numerics will be needed.

  1. Cosmic and terrestrial single-event radiation effects in dynamic random access memories

    Massengill, L.W.

    1996-01-01

    A review of the literature on single-event radiation effects (SEE) on MOS integrated-circuit dynamic random access memories (DRAM's) is presented. The sources of single-event (SE) radiation particles, causes of circuit information loss, experimental observations of SE information upset, technological developments for error mitigation, and relationships of developmental trends to SE vulnerability are discussed

  2. Scanning transient current study of the I-V stabilization phenomena in silicon detectors irradiated by fast neutrons

    Eremin, V.; Verbitskaya, E.; Sidorov, A.; Fretwurst, E.; Lindstrom, G.

    1996-03-01

    Investigation of the I-V stabilization phenomena in neutron irradiated silicon detectors has been carried out using scanning transient current technique (STCT) on non-irradiated PP + -p-n + detectors. The PP + -p-n + detectors were used to simulate the PP + -n-n + detectors irradiated beyond the space charge sign inversion (SCSI). Two mechanisms partially responsible for the I- V stabilization have been identified

  3. Transient heat loads in current fusion experiments, extrapolation to ITER and consequences for its operation

    Loarte, A; Saibene, G; Sartori, R; Riccardo, V; Andrew, P; Paley, J; Fundamenski, W; Eich, T; Herrmann, A; Pautasso, G; Kirk, A; Counsell, G; Federici, G; Strohmayer, G; Whyte, D; Leonard, A; Pitts, R A; Landman, I; Bazylev, B; Pestchanyi, S

    2007-01-01

    New experimental results on transient loads during ELMs and disruptions in present divertor tokamaks are described and used to carry out a extrapolation to ITER reference conditions and to draw consequences for its operation. In particular, the achievement of low energy/convective type I edge localized modes (ELMs) in ITER-like plasma conditions seems the only way to obtain transient loads which may be compatible with an acceptable erosion lifetime of plasma facing components (PFCs) in ITER. Power loads during disruptions, on the contrary, seem to lead in most cases to an acceptable divertor lifetime because of the relatively small plasma thermal energy remaining at the thermal quench and the large broadening of the power flux footprint during this phase. These conclusions are reinforced by calculations of the expected erosion lifetime, under these load conditions, which take into account a realistic temporal dependence of the power fluxes on PFCs during ELMs and disruptions

  4. A novel solid-state control system for the minimization of re-switching transient currents of induction motor

    Abro, M.R.; Larik, A.S.; Mahar, M.A.

    2005-01-01

    This work is an investigation into the minimizing re-closure transient currents of induction motors by activating NOVEL solid state control system switching at a matched condition. This emphasis is placed upon-circuit transition starting of cage motors, particularly star-delta switching. The initial study is carried out on single-phase induction motion. This system is capable of effective sensing re-closure of a switched off running single-phase induction motor. Further this scheme could be developed to give sequential delta closure of a switched off running three-phase induction motor during 1st cycles following the opening of the star mode. Consideration is also given to the possibility of using sensed re-closure to minimize transient whenever the supply to a running induction motor is briefly interrupted, irrespective of whether the interruption is by accident design. A brief study is made into the type of transient currents generated by opening the circuit of a running induction motor. The importance of the switching pattern for star-delta starting is explained and emphasized. (author)

  5. Effects of transient bottom water currents and oxygen concentrations on benthic exchange rates as assessed by eddy correlation measurements

    Holtappels, Moritz; Glud, Ronnie N.; Doris, Daphne

    2013-01-01

    Eddy correlation (EC) measurements in the benthic boundary layer (BBL) allow estimating benthic O2 uptake from a point distant to the sediment surface. This noninvasive approach has clear advantages as it does not disturb natural hydrodynamic conditions, integrates the flux over a large foot-print...... area and allows many repetitive flux measurements. A drawback is, however, that the measured flux in the bottom water is not necessarily equal to the flux across the sediment-water interface. A fundamental assumption of the EC technique is that mean current velocities and mean O2 concentrations...... in the bottom water are in steady state, which is seldom the case in highly dynamic environments like coastal waters. Therefore, it is of great importance to estimate the error introduced by nonsteady state conditions. We investigated two cases of transient conditions. First, the case of transient O2...

  6. Transient voltage control of a DFIG-based wind power plant for suppressing overvoltage using a reactive current reduction loop

    Geon Park

    2016-01-01

    Full Text Available This paper proposes a transient voltage control scheme of a doubly fed induction generator (DFIG-based wind power plant (WPP using a reactive current reduction loop to suppress the overvoltage at a point of interconnection (POI and DFIG terminal after a fault clearance. The change of terminal voltage of a DFIG is monitored at every predefined time period to detect the fault clearance. If the voltage change exceeds a set value, then the reactive current reduction loop reduces the reactive current reference in the DFIG controller using the step function. The reactive current injection of DFIGs in a WPP is rapidly reduced, and a WPP can rapidly suppress the overvoltage at a fault clearance because the reactive current reference is reduced. Using an electromagnetic transients program–released version (EMTP–RV simulator, the performance of the proposed scheme was validated for a model system comprising 20 units of a 5-MW DFIG considering various scenarios, such as fault and wind conditions. Test results show that the proposed scheme enables a WPP to suppress the overvoltage at the POI and DFIG terminal within a short time under grid fault conditions.

  7. Application of a combined superconducting fault current limiter and STATCOM to enhancement of power system transient stability

    Mahdad, Belkacem, E-mail: bemahdad@mselab.org; Srairi, K.

    2013-12-15

    Highlights: •A simple interactive model SFCL–STATCOM Controller is proposed to enhance the transient stability. •The STATCOM controller is integrated in coordination with the SFCL to support the excessive reactive power during fault. •Voltage stability index based continuation power flow is used to locate the STATCOM and the SFCL. •The clearing time improved compared to other cases (with only SFCL, with only STATCOM). •The choice of the STATCOM parameters is very important to exploit efficiently the integration of STATCOM Controller. -- Abstract: Stable and reliable operation of the power system network is dependent on the dynamic equilibrium between energy production and power demand under large disturbance such as short circuit or important line tripping. This paper investigates the use of combined model based superconducting fault current limiter (SFCL) and shunt FACTS Controller (STATCOM) for assessing the transient stability of a power system considering the automatic voltage regulator. The combined model located at a specified branch based on voltage stability index using continuation power flow. The main role of the proposed combined model is to achieve simultaneously a flexible control of reactive power using STATCOM Controller and to reduce fault current using superconducting technology based SFCL. The proposed combined model has been successfully adapted within the transient stability program and applied to enhance the transient power system stability of the WSCC9-Bus system. Critical clearing time (CCT) has been used as an index to evaluate and validate the contribution of the proposed coordinated Controller. Simulation results confirm the effectiveness and perspective of this combined Controller to enhance the dynamic power system performances.

  8. Operating experience with high beam currents and transient beam loading in the SLC damping rings

    Minty, M.G.; Akre, R.; Krejcik, P.; Siemann, R.H.

    1995-01-01

    During the 1994 SLC run the nominal operating intensity in the damping rings was raised from 3.5 x 10 10 to greater than 4 x 10 10 particles per bunch (ppb). Stricter regulation of rf system parameters was required to maintain stability of the rf system and particle beam. Improvements were made in the feedback loops which control the cavity amplitude and loading angles. Compensation for beam loading was also required to prevent klystron saturation during repetition rate changes. To minimize the effects of transient loading on the rf system, the gain of the direct rf feedback loop and the loading angles were optimized

  9. Experimental and simulation studies of neutron-induced single-event burnout in SiC power diodes

    Shoji, Tomoyuki; Nishida, Shuichi; Hamada, Kimimori; Tadano, Hiroshi

    2014-01-01

    Neutron-induced single-event burnouts (SEBs) of silicon carbide (SiC) power diodes have been investigated by white neutron irradiation experiments and transient device simulations. It was confirmed that a rapid increase in lattice temperature leads to formation of crown-shaped aluminum and cracks inside the device owing to expansion stress when the maximum lattice temperature reaches the sublimation temperature. SEB device simulation indicated that the peak lattice temperature is located in the vicinity of the n-/n+ interface and anode contact, and that the positions correspond to a hammock-like electric field distribution caused by the space charge effect. Moreover, the locations of the simulated peak lattice temperature agree closely with the positions of the observed destruction traces. Furthermore, it was theoretically demonstrated that the period of temperature increase of a SiC power device is two orders of magnitude less than that of a Si power device, using a thermal diffusion equation.

  10. Transient severe respiratory motion artifacts after application of gadoxetate disodium. What we currently know

    Well, Lennart; Weinrich, Julius Matthias; Adam, Gerhard; Bannas, Peter

    2018-01-01

    Gadoxetate disodium is an intracellular contrast agent for magnetic resonance imaging (MRI) of the liver. Recent publications revealed that injection of gadoxetate disodium can lead to imaging artifacts due to transient severe motion (TSM) in the arterial phase of contrast-enhanced liver MRI. In this review we present and discuss published frequencies of TSM, contrast injection and image acquisition protocols, potential risk factors, and proposed strategies to avoid or minimize the effects of TSM. Two reviewers independently searched the PubMed search engine for ''transient severe motion artifact'' and related terms. Reference lists of retrieved articles were also searched. The two reviewers selected in consensus nine studies that reported both frequencies of TSM and potential risk factors. Study data were extracted by both reviewers, and disagreement was resolved by consensus. TSM is caused by impaired breath-hold ability after gadoxetate disodium injection and occurs in 5 -22% of patients. The dose of applied contrast agent, repeated exposure to gadoxetate disodium, high BMI and pulmonary disease have been described as potential risk factors for TSM. However, there are only few concordant results on this topic and the pathophysiology of TSM has not been identified. Proposed strategies for the prevention of TSM are slow injection rates and low doses of diluted gadoxetate disodium. Accelerated and free-breathing MRI sequence protocols and breath-hold training may minimize the effects of TSM. Further prospective studies are needed to confirm these strategies and to identify the underlying mechanism of TSM.

  11. Transient severe respiratory motion artifacts after application of gadoxetate disodium. What we currently know

    Well, Lennart; Weinrich, Julius Matthias; Adam, Gerhard; Bannas, Peter [Univ. Medical Center Hamburg-Eppendorf, Hamburg (Germany). Dept. of Diagnostic and Interventional Radiology and Nuclear Medicince

    2018-01-15

    Gadoxetate disodium is an intracellular contrast agent for magnetic resonance imaging (MRI) of the liver. Recent publications revealed that injection of gadoxetate disodium can lead to imaging artifacts due to transient severe motion (TSM) in the arterial phase of contrast-enhanced liver MRI. In this review we present and discuss published frequencies of TSM, contrast injection and image acquisition protocols, potential risk factors, and proposed strategies to avoid or minimize the effects of TSM. Two reviewers independently searched the PubMed search engine for ''transient severe motion artifact'' and related terms. Reference lists of retrieved articles were also searched. The two reviewers selected in consensus nine studies that reported both frequencies of TSM and potential risk factors. Study data were extracted by both reviewers, and disagreement was resolved by consensus. TSM is caused by impaired breath-hold ability after gadoxetate disodium injection and occurs in 5 -22% of patients. The dose of applied contrast agent, repeated exposure to gadoxetate disodium, high BMI and pulmonary disease have been described as potential risk factors for TSM. However, there are only few concordant results on this topic and the pathophysiology of TSM has not been identified. Proposed strategies for the prevention of TSM are slow injection rates and low doses of diluted gadoxetate disodium. Accelerated and free-breathing MRI sequence protocols and breath-hold training may minimize the effects of TSM. Further prospective studies are needed to confirm these strategies and to identify the underlying mechanism of TSM.

  12. Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach

    Lauenstein, Jean-Marie

    2011-01-01

    Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR

  13. Calculation of cosmic ray induced single event upsets: Program CRUP (Cosmic Ray Upset Program)

    Shapiro, P.

    1983-09-01

    This report documents PROGRAM CRUP, COSMIC RAY UPSET PROGRAM. The computer program calculates cosmic ray induced single-event error rates in microelectronic circuits exposed to several representative cosmic-ray environments.

  14. Single-Event Effects in Silicon and Silicon Carbide Power Devices

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2014-01-01

    NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

  15. Single event monitoring system based on Java 3D and XML data binding

    Wang Liang; Chinese Academy of Sciences, Beijing; Zhu Kejun; Zhao Jingwei

    2007-01-01

    Online single event monitoring is important to BESIII DAQ System. Java3D is extension of Java Language in 3D technology, XML data binding is more efficient to handle XML document than SAX and DOM. This paper mainly introduce the implementation of BESIII single event monitoring system with Java3D and XML data binding, and interface for track fitting software with JNI technology. (authors)

  16. NEPP Update of Independent Single Event Upset Field Programmable Gate Array Testing

    Berg, Melanie; Label, Kenneth; Campola, Michael; Pellish, Jonathan

    2017-01-01

    This presentation provides a NASA Electronic Parts and Packaging (NEPP) Program update of independent Single Event Upset (SEU) Field Programmable Gate Array (FPGA) testing including FPGA test guidelines, Microsemi RTG4 heavy-ion results, Xilinx Kintex-UltraScale heavy-ion results, Xilinx UltraScale+ single event effect (SEE) test plans, development of a new methodology for characterizing SEU system response, and NEPP involvement with FPGA security and trust.

  17. Current status of models for transient phenomena in dopant diffusion and activation

    Pichler, P.; Stiebel, D.

    2002-01-01

    Transient phenomena caused by ion-implantation processes have been studied for more than 25 years now with a continuously increasing number of research articles published in this field per year. One driving force of this research is the ongoing miniaturization of ULSI MOS and bipolar technology which uses extensively the capabilities of technology-computer-aided-design (TCAD). The other driving force which attracts also academic institutions and research institutes is the high complexity of the phenomena, involving the interaction of dopants, intrinsic point defects, extended defects and impurities like carbon as well as the interactions of mobile defects with surfaces and interfaces and their redistribution in multilayer structures. This paper outlines some recent advances towards a quantitative description of such phenomena

  18. Dark properties and transient current response of Si0.95Ge0.05 n+p devices

    Ruzin, Arie; Marunko, S.; Abrosimov, N.V.; Riemann, H.

    2004-01-01

    In this study we present the dark properties of 'pin' devices fabricated with Czochralski grown Si 0.95 Ge 0.05 bulk single crystals. The growth of such material is most challenging because of the constitutional supercooling effect. The potential advantages of Si 1-x Ge x to be used for X- and gamma-ray detection applications are overviewed. At room temperature the generation current in the devices is too high for spectroscopy applications, but enables transient current technique (TCT) measurements. The current however drops significantly with moderate cooling. The effective majority carrier concentration is shown to be ∼2x10 14 cm -3 , and hole mobility ∼320 cm 2 /V s

  19. Synergistic effects of total ionizing dose on single event upset sensitivity in static random access memory under proton irradiation

    Xiao Yao; Guo Hong-Xia; Zhang Feng-Qi; Zhao Wen; Wang Yan-Ping; Zhang Ke-Ying; Ding Li-Li; Luo Yin-Hong; Wang Yuan-Ming; Fan Xue

    2014-01-01

    Synergistic effects of the total ionizing dose (TID) on the single event upset (SEU) sensitivity in static random access memories (SRAMs) were studied by using protons. The total dose was cumulated with high flux protons during the TID exposure, and the SEU cross section was tested with low flux protons at several cumulated dose steps. Because of the radiation-induced off-state leakage current increase of the CMOS transistors, the noise margin became asymmetric and the memory imprint effect was observed. (interdisciplinary physics and related areas of science and technology)

  20. Simulation study on single event burnout in linear doping buffer layer engineered power VDMOSFET

    Yunpeng, Jia; Hongyuan, Su; Rui, Jin; Dongqing, Hu; Yu, Wu

    2016-02-01

    The addition of a buffer layer can improve the device's secondary breakdown voltage, thus, improving the single event burnout (SEB) threshold voltage. In this paper, an N type linear doping buffer layer is proposed. According to quasi-stationary avalanche simulation and heavy ion beam simulation, the results show that an optimized linear doping buffer layer is critical. As SEB is induced by heavy ions impacting, the electric field of an optimized linear doping buffer device is much lower than that with an optimized constant doping buffer layer at a given buffer layer thickness and the same biasing voltages. Secondary breakdown voltage and the parasitic bipolar turn-on current are much higher than those with the optimized constant doping buffer layer. So the linear buffer layer is more advantageous to improving the device's SEB performance. Project supported by the National Natural Science Foundation of China (No. 61176071), the Doctoral Fund of Ministry of Education of China (No. 20111103120016), and the Science and Technology Program of State Grid Corporation of China (No. SGRI-WD-71-13-006).

  1. Single event upset susceptibilities of latchup immune CMOS process programmable gate arrays

    Koga, R.; Crain, W. R.; Crawford, K. B.; Hansel, S. J.; Lau, D. D.; Tsubota, T. K.

    Single event upsets (SEU) and latchup susceptibilities of complementary metal oxide semiconductor programmable gate arrays (CMOS PPGA's) were measured at the Lawrence Berkeley Laboratory 88-in. cyclotron facility with Xe (603 MeV), Cu (290 MeV), and Ar (180 MeV) ion beams. The PPGA devices tested were those which may be used in space. Most of the SEU measurements were taken with a newly constructed tester called the Bus Access Storage and Comparison System (BASACS) operating via a Macintosh II computer. When BASACS finds that an output does not match a prerecorded pattern, the state of all outputs, position in the test cycle, and other necessary information is transmitted and stored in the Macintosh. The upset rate was kept between 1 and 3 per second. After a sufficient number of errors are stored, the test is stopped and the total fluence of particles and total errors are recorded. The device power supply current was closely monitored to check for occurrence of latchup. Results of the tests are presented, indicating that some of the PPGA's are good candidates for selected space applications.

  2. Rotor current transient analysis of DFIG-based wind turbines during symmetrical voltage faults

    Ling, Yu; Cai, Xu; Wang, Ningbo

    2013-01-01

    Highlights: • We theoretically analyze the rotor fault current of DFIG based on space vector. • The presented analysis is simple, easy to understand. • The analysis highlights the accuracy of the expression of the rotor fault currents. • The expression can be widely used to analyze the different levels of voltage symmetrical fault. • Simulation results show the accuracy of the expression of the rotor currents. - Abstract: The impact of grid voltage fault on doubly fed induction generators (DFIGs), especially rotor currents, has received much attention. So, in this paper, the rotor currents of based-DFIG wind turbines are considered in a generalized way, which can be widely used to analyze the cases under different levels of voltage symmetrical faults. A direct method based on space vector is proposed to obtain an accurate expression of rotor currents as a function of time for symmetrical voltage faults in the power system. The presented theoretical analysis is simple and easy to understand and especially highlights the accuracy of the expression. Finally, the comparable simulations evaluate this analysis and show that the expression of the rotor currents is sufficient to calculate the maximum fault current, DC and AC components, and especially helps to understand the causes of the problem and as a result, contributes to adapt reasonable approaches to enhance the fault ride through (FRT) capability of DFIG wind turbines during a voltage fault

  3. Current role of transient elastography in the management of chronic hepatitis B patients

    Yu, Jung Hwan; Lee, Jung Il [Dept. of Internal Medicine, Yonsei University College of Medicine, Seoul (Korea, Republic of)

    2017-04-15

    Liver fibrosis is an important prognostic factor for chronic hepatitis B (CHB), and accurate evaluation of the stage of liver fibrosis is crucial in establishing management strategies. While liver biopsy is still considered the gold standard for staging liver fibrosis or cirrhosis, transient elastography (TE), a noninvasive means of assessing liver fibrosis, has come to play an increasing role in this process. After extensive validation, TE is now regarded as a reliable surrogate maker for grading the severity of liver fibrosis in CHB patients. It can detect the extent of fibrosis in a patient and can also be used to evaluate longitudinal changes in liver fibrosis over time with or without interventional management, such as antiviral therapy. However, several confounders hinder the effective assessment of liver fibrosis using TE, such as extensive liver necroinflammation, hepatic congestion, and cholestasis. TE has limited use in obese patients or patients with ascites. Although TE has several limitations, due to its accessibility and safety, it is a valuable tool for the initial evaluation and follow-up in patients with CH.

  4. Fault Diagnosis of Induction Machines in a Transient Regime Using Current Sensors with an Optimized Slepian Window.

    Burriel-Valencia, Jordi; Puche-Panadero, Ruben; Martinez-Roman, Javier; Sapena-Bano, Angel; Pineda-Sanchez, Manuel

    2018-01-06

    The aim of this paper is to introduce a new methodology for the fault diagnosis of induction machines working in the transient regime, when time-frequency analysis tools are used. The proposed method relies on the use of the optimized Slepian window for performing the short time Fourier transform (STFT) of the stator current signal. It is shown that for a given sequence length of finite duration, the Slepian window has the maximum concentration of energy, greater than can be reached with a gated Gaussian window, which is usually used as the analysis window. In this paper, the use and optimization of the Slepian window for fault diagnosis of induction machines is theoretically introduced and experimentally validated through the test of a 3.15-MW induction motor with broken bars during the start-up transient. The theoretical analysis and the experimental results show that the use of the Slepian window can highlight the fault components in the current's spectrogram with a significant reduction of the required computational resources.

  5. Non-inductive Solenoid-less Plasma Current Start-up in NSTX Using Transient CHI

    Raman, R.; Mueller, D.; Jarboe, T.R.; Nelson, B.A.; Bell, M.G.; Ono, M.; Bigelow, T.; Kaita, R.; LeBlanc, B.; Lee, K.C.; Maqueda, R.; Menard, J.; Paul, S.; Roquemore, L.

    2007-01-01

    Coaxial Helicity Injection (CHI) has been successfully used in the National Spherical Torus Experiment (NSTX) for a demonstration of closed flux current generation without the use of the central solenoid. The favorable properties of the Spherical Torus (ST) arise from its very small aspect ratio. However, small aspect ratio devices have very restricted space for a substantial central solenoid. Thus methods for initiating the plasma current without relying on induction from a central solenoid are essential for the viability of the ST concept. CHI is a promising candidate for solenoid-free plasma startup in a ST. The method has now produced closed flux current up to 160 kA verifying the high current capability of this method in a large ST built with conventional tokamak components.

  6. Effect of trapped electrons on the transient current density and luminance of organic light-emitting diode

    Lee, Jiun-Haw; Chen, Chia-Hsun; Lin, Bo-Yen; Shih, Yen-Chen; Lin, King-Fu; Wang, Leeyih; Chiu, Tien-Lung; Lin, Chi-Feng

    2018-04-01

    Transient current density and luminance from an organic light-emitting diode (OLED) driven by voltage pulses were investigated. Waveforms with different repetition rate, duty cycle, off-period, and on-period were used to study the injection and transport characteristics of electron and holes in an OLED under pulse operation. It was found that trapped electrons inside the emitting layer (EML) and the electron transporting layer (ETL) material, tris(8-hydroxyquinolate)aluminum (Alq3) helped for attracting the holes into the EML/ETL and reducing the driving voltage, which was further confirmed from the analysis of capacitance-voltage and displacement current measurement. The relaxation time and trapped filling time of the trapped electrons in Alq3 layer were ~200 µs and ~600 µs with 6 V pulse operation, respectively.

  7. Effect of coupling currents on the dynamic inductance during fast transient in superconducting magnets

    V. Marinozzi

    2015-03-01

    Full Text Available We present electromagnetic models aiming to calculate the variation of the inductance in a magnet due to dynamic effects such as the variation of magnetization or the coupling with eddy currents. The models are studied with special regard to the calculation of the inductance in superconducting magnets which are affected by interfilament coupling currents. The developed models have been compared with experimental data coming from tests of prototype Nb_{3}Sn magnets designed for the new generation of accelerators. This work is relevant for the quench protection study of superconducting magnets: quench is an unwanted event, when part of the magnet becomes resistive; in these cases, the current should be discharged as fast as possible, in order to maintain the resistive zone temperature under a safe limit. The magnet inductance is therefore a relevant term for the description of the current discharge, especially for the high-field new generation superconducting magnets for accelerators, and this work shows how to calculate the correct value during rapid current changes, providing a mean for simulations of the reached temperature.

  8. Generation of pyroclastic density currents from pyroclastic fountaining or transient explosions: insights from large scale experiments

    Sulpizio, Roberto; Dellino, Pierfrancesco; Mele, Daniela; La Volpe, Luigi [CIRISIVU, c/o Dipartimento Geomineralogico, via Orabona 4, 70125, Bari (Italy)], E-mail: r.sulpizio@geomin.uniba.it

    2008-10-01

    Pyroclastic density currents (PDCs) are among the most amazing, complex and dangerous volcanic phenomena. They are moving mixtures of particles and gas that flow across the ground, and originate in different ways and from various sources, during explosive eruptions or gravity-driven collapse of domes. We present results from experimental work to investigate the generation of large-scale, multiphase, gravity-driven currents. The experiments described here are particularly devoted to understanding the inception and development of PDCs under impulsive injection conditions by means of the fast application of a finite stress to a finite mass of pyroclastic particles via expansion of compressed gas. We find that, in summary, PDC generation from collapse of pressure-adjusted or overpressurised pyroclastic jets critically depends on behaviour of injection into the atmosphere, which controls the collapsing mechanisms and then the physical parameters of the initiating current.

  9. Application of a modified flux-coupling type superconducting fault current limiter to transient performance enhancement of micro-grid

    Chen, Lei, E-mail: stclchen1982@163.com [School of Electrical Engineering, Wuhan University, Wuhan 430072 (China); Zheng, Feng; Deng, Changhong; Li, Shichun; Li, Miao; Liu, Hui [School of Electrical Engineering, Wuhan University, Wuhan 430072 (China); Zhu, Lin [Department of Electrical Engineering and Computer Science, University of Tennessee, Knoxville 37996 (United States); Guo, Fang [Department of Substation, Guang Dong Electric Power Design Institute, Guangzhou 510663 (China)

    2015-11-15

    Highlights: • A modified flux-coupling type SFCL is suggested to enhance the transient performance of a micro-grid. • The SFCL’s main contribution is to improve the micro-grid’s fault ride-through capability. • The SFCL also can make the micro-grid carry out a smooth transition between its grid-connected and islanded modes. • The simulations show that the SFCL can availably strengthen the micro-grid’s voltage and frequency stability. - Abstract: Concerning the application and development of a micro-grid system which is designed to accommodate high penetration of intermittent renewable resources, one of the main issues is related to an increase in the fault-current level. It is crucial to ensure the micro-grid’s operational stability and service reliability when a fault occurs in the main network. In this paper, our research group suggests a modified flux-coupling type superconducting fault current limiter (SFCL) to enhance the transient performance of a typical micro-grid system. The SFCL is installed at the point of common coupling (PCC) between the main network and the micro-grid, and it is expected to actively improve the micro-grid’s fault ride-through capability. And for some specific faults, the micro-grid should disconnect from the main network, and the SFCL’s contribution is to make the micro-grid carry out a smooth transition between its grid-connected and islanded modes. Related theory derivation, technical discussion and simulation analysis are performed. From the demonstrated results, applying the SFCL can effectively limit the fault current, maintain the power balance, and enhance the voltage and frequency stability of the micro-grid.

  10. Application of a modified flux-coupling type superconducting fault current limiter to transient performance enhancement of micro-grid

    Chen, Lei; Zheng, Feng; Deng, Changhong; Li, Shichun; Li, Miao; Liu, Hui; Zhu, Lin; Guo, Fang

    2015-01-01

    Highlights: • A modified flux-coupling type SFCL is suggested to enhance the transient performance of a micro-grid. • The SFCL’s main contribution is to improve the micro-grid’s fault ride-through capability. • The SFCL also can make the micro-grid carry out a smooth transition between its grid-connected and islanded modes. • The simulations show that the SFCL can availably strengthen the micro-grid’s voltage and frequency stability. - Abstract: Concerning the application and development of a micro-grid system which is designed to accommodate high penetration of intermittent renewable resources, one of the main issues is related to an increase in the fault-current level. It is crucial to ensure the micro-grid’s operational stability and service reliability when a fault occurs in the main network. In this paper, our research group suggests a modified flux-coupling type superconducting fault current limiter (SFCL) to enhance the transient performance of a typical micro-grid system. The SFCL is installed at the point of common coupling (PCC) between the main network and the micro-grid, and it is expected to actively improve the micro-grid’s fault ride-through capability. And for some specific faults, the micro-grid should disconnect from the main network, and the SFCL’s contribution is to make the micro-grid carry out a smooth transition between its grid-connected and islanded modes. Related theory derivation, technical discussion and simulation analysis are performed. From the demonstrated results, applying the SFCL can effectively limit the fault current, maintain the power balance, and enhance the voltage and frequency stability of the micro-grid.

  11. Fault Diagnosis of Induction Machines in a Transient Regime Using Current Sensors with an Optimized Slepian Window

    Jordi Burriel-Valencia

    2018-01-01

    Full Text Available The aim of this paper is to introduce a new methodology for the fault diagnosis of induction machines working in the transient regime, when time-frequency analysis tools are used. The proposed method relies on the use of the optimized Slepian window for performing the short time Fourier transform (STFT of the stator current signal. It is shown that for a given sequence length of finite duration, the Slepian window has the maximum concentration of energy, greater than can be reached with a gated Gaussian window, which is usually used as the analysis window. In this paper, the use and optimization of the Slepian window for fault diagnosis of induction machines is theoretically introduced and experimentally validated through the test of a 3.15-MW induction motor with broken bars during the start-up transient. The theoretical analysis and the experimental results show that the use of the Slepian window can highlight the fault components in the current’s spectrogram with a significant reduction of the required computational resources.

  12. Low-energy neutron-induced single-event upsets in static random access memory

    Guo Xiaoqiang; Guo Hongxia; Wang Guizhen; Ling Dongsheng; Chen Wei; Bai Xiaoyan; Yang Shanchao; Liu Yan

    2009-01-01

    The visual analysis method of data process was provided for neutron-induced single-event upset(SEU) in static random access memory(SRAM). The SEU effects of six CMOS SRAMs with different feature size(from 0.13 μm to 1.50 μm) were studied. The SEU experiments were performed using the neutron radiation environment at Xi'an pulsed reactor. And the dependence of low-energy neutron-induced SEU cross section on SRAM's feature size was given. The results indicate that the decreased critical charge is the dominant factor for the increase of single event effect sensitivity of SRAM devices with decreased feature size. Small-sized SRAM devices are more sensitive than large-sized ones to single event effect induced by low-energy neutrons. (authors)

  13. Single event effects and total ionizing dose effects of typical VDMOSFET devices

    Lou Jianshe; Cai Nan; Liu Jiaxin; Wu Qinzhi; Wang Jia

    2012-01-01

    In this work, single event effects and total ionizing dose effects of typical VDMOSFET irradiated by 60 Co γ-rays and 252 Cf source were studied. The single event burnout and single event gate rupture (SEB/SEGR) effects were investigated, and the relationship between drain-source breakdown voltage and ionizing dose was obtained. The results showed that the VDMOSFET devices were sensitive to SEB and SEGR, and measures to improve their resistance to SEB and SEGR should be considered seriously for their space applications. The drain-source breakdown voltage was sensitive to total ionizing dose effects as the threshold voltage. In assessing the devices' resistance to the total ionizing dose effects, both the threshold voltage and the drain-source breakdown voltage should be taken into account. (authors)

  14. Physiological consequences of transient outward K(+) current activation during heart failure in the canine left ventricle

    Cordeiro, Jonathan M; Callø, Kirstine; Moise, N Sydney

    2012-01-01

    .7±1.4pA/pF after 5weeks, +50mV). Current decay as well as recovery of I(to) from inactivation progressively slowed with the development of heart failure. Reduction of I(to) density was paralleled by a reduction in phase 1 magnitude, epicardial action potential notch and J wave amplitude recorded from......Background: Remodeling of ion channel expression is well established in heart failure (HF). We determined the extent to which I(to) is reduced in tachypacing-induced HF and assessed the ability of an I(to) activator (NS5806) to recover this current. Method and results: Whole-cell patch clamp...

  15. A 3 A sink/source current fast transient response low-dropout G{sub m} driven linear regulator

    Chu Xiuqin; Li Qingwei; Lai Xinquan; Yuan Bing [Institute of Electronic CAD, Xidian University, Xi' an 710071 (China); Li Yanming [School of Electronic and Control Engineering, Chang' an University, Xi' an 710064 (China); Zhao Yongrui, E-mail: liqw309@163.com, E-mail: xqchu@mail.xidian.edu.cn [Key Laboratory of High-Speed Circuit Design and EMC, Ministry of Education, Xidian University, Xi' an 710071 (China)

    2011-06-15

    A 3 A sink/source G{sub m}-driven CMOS low-dropout regulator (LDO), specially designed for low input voltage and low cost, is presented by utilizing the structure of a current mirror G{sub m} (transconductance) driving technique, which provides high stability as well as a fast load transient response. The proposed LDO was fabricated by a 0.5 {mu}m standard CMOS process, and the die size is as small as 1.0 mm{sup 2}. The proposed LDO dissipates 220 {mu}A of quiescent current in no-load conditions and is able to deliver up to 3 A of load current. The measured results show that the output voltage can be resumed within 2 {mu}s with a less than 1 mV overshoot and undershoot in the output current step from -1.8 to 1.8 A with a 0.1 {mu}s rising and falling time at three 10 {mu}F ceramic capacitors. (semiconductor integrated circuits)

  16. A 3 A sink/source current fast transient response low-dropout Gm driven linear regulator

    Chu Xiuqin; Li Qingwei; Lai Xinquan; Yuan Bing; Li Yanming; Zhao Yongrui

    2011-01-01

    A 3 A sink/source G m -driven CMOS low-dropout regulator (LDO), specially designed for low input voltage and low cost, is presented by utilizing the structure of a current mirror G m (transconductance) driving technique, which provides high stability as well as a fast load transient response. The proposed LDO was fabricated by a 0.5 μm standard CMOS process, and the die size is as small as 1.0 mm 2 . The proposed LDO dissipates 220 μA of quiescent current in no-load conditions and is able to deliver up to 3 A of load current. The measured results show that the output voltage can be resumed within 2 μs with a less than 1 mV overshoot and undershoot in the output current step from -1.8 to 1.8 A with a 0.1 μs rising and falling time at three 10 μF ceramic capacitors. (semiconductor integrated circuits)

  17. Impact of NBTI Aging on the Single-Event Upset of SRAM Cells

    Bagatin, M; Gerardin, Simone; Paccagnella, Alessandro; Bagatin, Marta

    2010-01-01

    We analyzed the impact of negative bias temperature instability (NBTI) on the single-event upset rate of SRAM cells through experiments and SPICE simulations. We performed critical charge simulations introducing different degradation patterns in the cells, in three technology nodes, from 180 to 90 nm. The simulations results were checked with alpha-particle and heavy-ion irradiations on a 130-nm technology. Both simulations and experimental results show that NBTI degradation does not significantly affect the single-event upset SRAM cell rate as long as the parametric drift induced by aging is within 10\\%.

  18. Transient analysis of carbon monoxide transport phenomena and adsorption kinetics in HT-PEMFC during dynamic current extraction

    Raj, Kamal Abdul Rasheedj; Chan, Siew Hwa

    2015-01-01

    Highlights: • Increasing the fuel cell temperature reduces outlet CO concentration. • Increasing the CO inlet (initial) concentration increases outlet CO concentration. • Increasing current density step and dwell time increases outlet CO concentration. • Increasing in the CL and GDL porosities reduces outlet CO concentration. - Abstract: This paper investigates the transport phenomena of carbon monoxide (CO) and adsorption kinetics, in a high-temperature proton exchange membrane fuel cell (HT-PEMFC) during step-wise current extraction (step-change in current extraction). Step-wise current extraction is a common process done to accommodate a sudden power surge during an operation. Since HT-PEMFCs are capable of handling high impurity of CO, hydrogen fuel that is contaminated with trace amount of CO is usually considered for commercial benefits. Thus, a transient three-dimensional isothermal anodic electro-kinetic numerical model is developed to determine the effect of operating parameters such as fuel cell temperature, CO inlet (initial) concentration, step-change of current density and dwell time on the transport phenomena of CO and adsorption kinetics. In addition, geometrical factors such as the catalyst layer (CL) and gas diffusion layer (GDL) porosity are also varied as well. The results show that the above-mentioned operating parameters can affect the maximum CO concentration at the CL, especially at the outlet of the channel. Specifically, a reduction of fuel cell temperature can significantly increase the CO concentration near the outlet, while increasing CO inlet (initial) concentration, step-change amplitude of current density and current density dwell time can cause an increase in CO concentration at the outlet, albeit to different extent. In addition, the increase in the porosity of CL and GDL, results in the reduction of the maximum CO concentration at the outlet, albeit to different extent. In addition, the CO and hydrogen surface coverage

  19. Characterization of deep level defects in Tl6I4S single crystals by photo-induced current transient spectroscopy

    Peters, J A; Liu, Z; Sebastian, M; Wessels, B W; Im, J; Freeman, A J; Nguyen, S; Kanatzidis, M G

    2015-01-01

    Defect levels in semi-insulating Tl 6 I 4 S single crystals grown by the horizontal Bridgman technique have been characterized using photo-induced current transient spectroscopy (PICTS). These measurements revealed six electron traps located at (0.059  ±  0.007), (0.13  ±  0.012), (0.31  ±  0.074), (0.39  ±  0.019), (0.62  ±  0.110), and (0.597  ±  0.105). These defect levels are attributed to vacancies (V I , V S ) and antisite defects (I S , Tl S , Tl I ) upon comparison to calculations of native defect energy levels using density functional theory and defects recently reported from photoluminescence and photoconductivity measurements. (paper)

  20. Single-Event Latchup Testing of the Micrel MIC4424 Dual Power MOSFET Driver

    Pellish, J. A.; Boutte, A.; Kim, H.; Phan, A.; Topper, A.

    2016-01-01

    We conducted 47 exposures of four different MIC4424 devices and did not observe any SEL or high-current events. This included worst-case conditions with a LET of 81 MeV-sq cm/mg, applied voltage of 18.5 V, a case temperature greater than 120 C, and a final fluence of 1x10(exp 7)/sq cm. We also monitored both the outputs for the presence of SETs. While the period of the 1 MHz square wave was slightly altered in some cases, no pulses were added or deleted. 1. Purpose: The purpose of this testing is to characterize the BiCMOS/DMOS Micrel MIC4424 dual, non-inverting MOSFET driver for single-event latchup (SEL) susceptibility. These data will be used for flight lot evaluation purposes. 2. Devices Tested: The MIC4423/4424/4425 family are highly reliable BiCMOS/DMOS buffer/driver MOSFET drivers. They are higher output current versions of the MIC4426/4427/4428. They can survive up to 5V of noise spiking, of either polarity, on the ground pin. They can accept, without either damage or logic upset, up to half an amp of reverse current (either polarity) forced back into their outputs. Primarily intended for driving power MOSFETs, the MIC4423/4424/4425 drivers are suitable for driving other loads (capacitive, resistive, or inductive) which require low-impedance, high peak currents, and fast switching times. Heavily loaded clock lines, coaxial cables, or piezoelectric transducers are some examples. The only known limitation on loading is that total power dissipated in the driver must be kept within the maximum power dissipation limits of the package. Five (5) parts were provided for SEL testing. We prepared four parts for irradiation and reserved one piece as an un-irradiated control. More information about the devices can be found in Table 1. The parts were prepared for testing by removing the lid from the CDIP package to expose the target die. The parts were then soldered to small copper circuit adapter boards for easy handling. These parts are fabricated in a bulk Bi

  1. Single-Event Effects in Power MOSFETs During Heavy Ion Irradiations Performed After Gamma-Ray Degradation

    Busatto, G.; De Luca, V.; Iannuzzo, F.; Sanseverino, A.; Velardi, F.

    2013-10-01

    The robustness of commercial power metal-oxide semiconductor field-effect transistors to combined gamma-heavy ion irradiation has been investigated, evidence that the degradation of the gate oxide caused by the γ irradiation can severely corrupt the robustness to single-event effects and drastically modify the physical behavior of the device under test after the impact of a heavy ion. A decrease of the critical voltages at which destructive burnouts and gate ruptures for heavy ion impact appear, has been detected in the devices under test, which were previously irradiated with γ rays. In addition, the amount of critical voltage reduction is strictly related to the amount of the absorbed γ-ray dose. Furthermore, at the failure voltage, the behavior of the device is affected by the conduction of a current through the gate oxide. Moreover, the single-event gate rupture” of the device appears at lower voltages because of the reduction of the Fowler-Nordheim limit in the γ-irradiated devices.

  2. High-energy heavy ion testing of VLSI devices for single event ...

    Unknown

    per describes the high-energy heavy ion radiation testing of VLSI devices for single event upset (SEU) ... The experimental set up employed to produce low flux of heavy ions viz. silicon ... through which they pass, leaving behind a wake of elec- ... for use in Bus Management Unit (BMU) and bulk CMOS ... was scheduled.

  3. Single Event Upset Energy Dependence In a Buck-Converter Power Supply Design

    Drake, G; The ATLAS collaboration; Gopalakrishnan, A; Mahadik, S; Mellado, B; Proudfoot, J; Reed, R; Senthilkumaran, A; Stanek, R

    2012-01-01

    We present a study of Single Event Upsets (SEU) performed on a commercial pulse-width modulator controller chip for switching power supplies. We performed tests to study the probability of an SEU occurring as a function of incident particle (hadron) energy. We discuss the performance of the circuit, and present a solution using external circuitry to effectively eliminate the effect.

  4. First nondestructive measurements of power MOSFET single event burnout cross sections

    Oberg, D.L.; Wert, J.L.

    1987-01-01

    A new technique to nondestructively measure single event burnout cross sections for N-channel power MOSFETs is presented. Previous measurements of power MOSFET burnout susceptibility have been destructive and thus not conducive to providing statistically meaningful burnout probabilities. The nondestructive technique and data for various device types taken at several accelerators, including the LBL Bevalac, are documented. Several new phenomena are observed

  5. Single-event burnout of power MOSFET devices for satellite application

    Xue Yuxiong; Tian Kai; Cao Zhou; Yang Shiyu; Liu Gang; Cai Xiaowu; Lu Jiang

    2008-01-01

    Single-event burnout (SEB) sensitivity was tested for power MOSFET devices, JTMCS081 and JTMCS062, which were made in Institute of Microelectronics, Chinese Academy of Sciences, using californium-252 simulation source. SEB voltage threshold was found for devices under test (DUT). It is helpful for engineers to choose devices used in satellites. (authors)

  6. Single Event Effects Test Facility Options at the Oak Ridge National Laboratory

    Riemer, Bernie [ORNL; Gallmeier, Franz X [ORNL; Dominik, Laura J [ORNL

    2015-01-01

    Increasing use of microelectronics of ever diminishing feature size in avionics systems has led to a growing Single Event Effects (SEE) susceptibility arising from the highly ionizing interactions of cosmic rays and solar particles. Single event effects caused by atmospheric radiation have been recognized in recent years as a design issue for avionics equipment and systems. To ensure a system meets all its safety and reliability requirements, SEE induced upsets and potential system failures need to be considered, including testing of the components and systems in a neutron beam. Testing of integrated circuits (ICs) and systems for use in radiation environments requires the utilization of highly advanced laboratory facilities that can run evaluations on microcircuits for the effects of radiation. This paper provides a background of the atmospheric radiation phenomenon and the resulting single event effects, including single event upset (SEU) and latch up conditions. A study investigating requirements for future single event effect irradiation test facilities and developing options at the Spallation Neutron Source (SNS) is summarized. The relatively new SNS with its 1.0 GeV proton beam, typical operation of 5000 h per year, expertise in spallation neutron sources, user program infrastructure, and decades of useful life ahead is well suited for hosting a world-class SEE test facility in North America. Emphasis was put on testing of large avionics systems while still providing tunable high flux irradiation conditions for component tests. Makers of ground-based systems would also be served well by these facilities. Three options are described; the most capable, flexible, and highest-test-capacity option is a new stand-alone target station using about one kW of proton beam power on a gas-cooled tungsten target, with dual test enclosures. Less expensive options are also described.

  7. FinFET memory cell improvements for higher immunity against single event upsets

    Sajit, Ahmed Sattar

    The 21st century is witnessing a tremendous demand for transistors. Life amenities have incorporated the transistor in every aspect of daily life, ranging from toys to rocket science. Day by day, scaling down the transistor is becoming an imperious necessity. However, it is not a straightforward process; instead, it faces overwhelming challenges. Due to these scaling changes, new technologies, such as FinFETs for example, have emerged as alternatives to the conventional bulk-CMOS technology. FinFET has more control over the channel, therefore, leakage current is reduced. FinFET could bridge the gap between silicon devices and non-silicon devices. The semiconductor industry is now incorporating FinFETs in systems and subsystems. For example, Intel has been using them in their newest processors, delivering potential saving powers and increased speeds to memory circuits. Memory sub-systems are considered a vital component in the digital era. In memory, few rows are read or written at a time, while the most rows are static; hence, reducing leakage current increases the performance. However, as a transistor shrinks, it becomes more vulnerable to the effects from radioactive particle strikes. If a particle hits a node in a memory cell, the content might flip; consequently, leading to corrupting stored data. Critical fields, such as medical and aerospace, where there are no second chances and cannot even afford to operate at 99.99% accuracy, has induced me to find a rigid circuit in a radiated working environment. This research focuses on a wide spectrum of memories such as 6T SRAM, 8T SRAM, and DICE memory cells using FinFET technology and finding the best platform in terms of Read and Write delay, susceptibility level of SNM, RSNM, leakage current, energy consumption, and Single Event Upsets (SEUs). This research has shown that the SEU tolerance that 6T and 8T FinFET SRAMs provide may not be acceptable in medical and aerospace applications where there is a very high

  8. Analytical solutions for thermal transient profile in solid target irradiated with low energy and high beam current protons

    Oliveira, Henrique B. de; Brazao, Nei G.; Sciani, Valdir

    2009-01-01

    There were obtained analytical solutions for thermal transient in solid targets, used in short half-life radioisotopes production, when irradiated with low energy and high beam current protons, in the cyclotron accelerator Cyclone 30 of the Institute for Energy and Nuclear Research (IPEN/CNEN-SP). The beam spatial profile was considered constant and the time depended heat distribution equation was resolved for a continuous particles flow entering the target. The problem was divided into two stages: a general solution was proposed which is the sum of two functions, the first one related to the thermal equilibrium situation and the second one related to a time dependent function that was determinate by the setting of the contour conditions and the initial conditions imposed by the real problem. By that one got an analytic function for a complete description of the heat transport phenomenon inside the targets. There were used both, numerical and symbolic computation methods, to obtain temperature maps and thermal gradients and the results showed an excellent agreement when compared with purely numerical models. The results were compared with obtained data from Gallium-67 and Thallium-201 irradiation routines conducted by the IPEN Cyclotrons accelerators center, showing excellent agreement. The objective of this paper is to develop solid targets irradiation systems (metals and oxides) so that one can operate with high levels of current beam, minimizing the irradiation time and maximizing the final returns. (author)

  9. Current and planned numerical development for improving computing performance for long duration and/or low pressure transients

    Faydide, B. [Commissariat a l`Energie Atomique, Grenoble (France)

    1997-07-01

    This paper presents the current and planned numerical development for improving computing performance in case of Cathare applications needing real time, like simulator applications. Cathare is a thermalhydraulic code developed by CEA (DRN), IPSN, EDF and FRAMATOME for PWR safety analysis. First, the general characteristics of the code are presented, dealing with physical models, numerical topics, and validation strategy. Then, the current and planned applications of Cathare in the field of simulators are discussed. Some of these applications were made in the past, using a simplified and fast-running version of Cathare (Cathare-Simu); the status of the numerical improvements obtained with Cathare-Simu is presented. The planned developments concern mainly the Simulator Cathare Release (SCAR) project which deals with the use of the most recent version of Cathare inside simulators. In this frame, the numerical developments are related with the speed up of the calculation process, using parallel processing and improvement of code reliability on a large set of NPP transients.

  10. Current and planned numerical development for improving computing performance for long duration and/or low pressure transients

    Faydide, B.

    1997-01-01

    This paper presents the current and planned numerical development for improving computing performance in case of Cathare applications needing real time, like simulator applications. Cathare is a thermalhydraulic code developed by CEA (DRN), IPSN, EDF and FRAMATOME for PWR safety analysis. First, the general characteristics of the code are presented, dealing with physical models, numerical topics, and validation strategy. Then, the current and planned applications of Cathare in the field of simulators are discussed. Some of these applications were made in the past, using a simplified and fast-running version of Cathare (Cathare-Simu); the status of the numerical improvements obtained with Cathare-Simu is presented. The planned developments concern mainly the Simulator Cathare Release (SCAR) project which deals with the use of the most recent version of Cathare inside simulators. In this frame, the numerical developments are related with the speed up of the calculation process, using parallel processing and improvement of code reliability on a large set of NPP transients

  11. Simulation study and experimental results for detection and classification of the transient capacitor inrush current using discrete wavelet transform and artificial intelligence

    Patcharoen Theerasak

    2018-04-01

    Full Text Available This paper describes the combination of discrete wavelet transforms (DWT and artificial intelligence (AI, which are efficient techniques to identify the type of inrush current, analyze the origin and possible cause on the capacitor bank switching. The experiment setup used to verify the proposed techniques can be detected and classified the transient inrush current from normal capacitor rated current. The discrete wavelet transforms are used to detect and classify the inrush current. Then, output from wavelet is acted as input of fuzzy inference system for discriminating the type of switching transient inrush current. The proposed technique shows enhanced performance with a discrimination accuracy of 90.57%. Both simulation study and experimental results are quite satisfactory with providing the high accuracy and reliability which can be developed and implemented into a numerical overcurrent (50/51 and unbalanced current (60C protection relay for an application of shunt capacitor bank protection in the future.

  12. Simulation study and experimental results for detection and classification of the transient capacitor inrush current using discrete wavelet transform and artificial intelligence

    Patcharoen, Theerasak; Yoomak, Suntiti; Ngaopitakkul, Atthapol; Pothisarn, Chaichan

    2018-04-01

    This paper describes the combination of discrete wavelet transforms (DWT) and artificial intelligence (AI), which are efficient techniques to identify the type of inrush current, analyze the origin and possible cause on the capacitor bank switching. The experiment setup used to verify the proposed techniques can be detected and classified the transient inrush current from normal capacitor rated current. The discrete wavelet transforms are used to detect and classify the inrush current. Then, output from wavelet is acted as input of fuzzy inference system for discriminating the type of switching transient inrush current. The proposed technique shows enhanced performance with a discrimination accuracy of 90.57%. Both simulation study and experimental results are quite satisfactory with providing the high accuracy and reliability which can be developed and implemented into a numerical overcurrent (50/51) and unbalanced current (60C) protection relay for an application of shunt capacitor bank protection in the future.

  13. Modulation of the transient outward current (Ito) in rat cardiac myocytes and human Kv4.3 channels by mefloquine

    Perez-Cortes, E.J.; Islas, A.A.; Arevalo, J.P.; Mancilla, C.; Monjaraz, E.; Salinas-Stefanon, E.M.

    2015-01-01

    The antimalarial drug mefloquine, is known to be a potassium channel blocker, although its mechanism of action has not being elucidated and its effects on the transient outward current (I to ) and the molecular correlate, the K v 4.3 channel has not being studied. Here, we describe the mefloquine-induced inhibition of the rat ventricular I to and of CHO cells co-transfected with human K v 4.3 and its accessory subunit hKChIP2C by whole-cell voltage-clamp. Mefloquine inhibited rat I to and hK v 4.3 + KChIP2C currents in a concentration-dependent manner with a limited voltage dependence and similar potencies (IC 50 = 8.9 μM and 10.5 μM for cardiac myocytes and K v 4.3 channels, respectively). In addition, mefloquine did not affect the activation of either current but significantly modified the hK v 4.3 steady-state inactivation and recovery from inactivation. The effects of this drug was compared with that of 4-aminopyridine (4-AP), a well-known potassium channel blocker and its binding site does not seem to overlap with that of 4-AP. - Highlights: • Mefloquine inhibited ventricular I to and hK v 4.3 channels. IC 50 = 8.9 and 10.5 μM. • Inactivation and recovery from inactivation in the hK v 4.3 channels were modified by mefloquine. • Mefloquine displayed a higher affinity for the inactivated state. • The binding site for mefloquine may be located in the extracellular side of the channel.

  14. Single-event transient imaging with an ultra-high-speed temporally compressive multi-aperture CMOS image sensor.

    Mochizuki, Futa; Kagawa, Keiichiro; Okihara, Shin-ichiro; Seo, Min-Woong; Zhang, Bo; Takasawa, Taishi; Yasutomi, Keita; Kawahito, Shoji

    2016-02-22

    In the work described in this paper, an image reproduction scheme with an ultra-high-speed temporally compressive multi-aperture CMOS image sensor was demonstrated. The sensor captures an object by compressing a sequence of images with focal-plane temporally random-coded shutters, followed by reconstruction of time-resolved images. Because signals are modulated pixel-by-pixel during capturing, the maximum frame rate is defined only by the charge transfer speed and can thus be higher than those of conventional ultra-high-speed cameras. The frame rate and optical efficiency of the multi-aperture scheme are discussed. To demonstrate the proposed imaging method, a 5×3 multi-aperture image sensor was fabricated. The average rising and falling times of the shutters were 1.53 ns and 1.69 ns, respectively. The maximum skew among the shutters was 3 ns. The sensor observed plasma emission by compressing it to 15 frames, and a series of 32 images at 200 Mfps was reconstructed. In the experiment, by correcting disparities and considering temporal pixel responses, artifacts in the reconstructed images were reduced. An improvement in PSNR from 25.8 dB to 30.8 dB was confirmed in simulations.

  15. Water-induced charge transport in tablets of microcrystalline cellulose of varying density: dielectric spectroscopy and transient current measurements

    Nilsson, Martin; Alderborn, Goeran; Stroemme, Maria

    2003-01-01

    Room temperature dielectric frequency response data taken over 13 decades in frequency on microcrystalline cellulose (MCC) tablets of varying density are presented. The frequency response shows on three different processes: the first one is a high-frequency relaxation process whose magnitude increases and reaches a plateau as the tablet density increases. This process is associated with orientational motions of local chain segments via glycosidic bonds. The second relaxation process, related to the presence of water in the MCC matrix, is insensitive to changes in tablet density. At lower frequencies, dc-like imperfect charge transport dominates the dielectric spectrum. The dc conductivity was found to decrease with increasing tablet density and increase exponentially with increasing humidity. Transient current measurements indicated that two different ionic species, protons and OH - ions, lied behind the observed conductivity. At ambient humidity of 22%, only one in a billion of the water molecules present in the tablet matrix participated in long range dc conduction. The diffusion coefficient of the protons and OH - ions were found to be of the order of 10 -9 cm 2 /s, which is the same as for small salt building ions in MCC. This shows that ionic drugs leaving a tablet matrix may diffuse in the same manner as the constituent ions of water and, thus, elucidates the necessity to understand the water transport properties of excipient materials to be able to tailor the drug release process from pharmaceutical tablets

  16. Anodal transcranial direct current stimulation transiently improves contrast sensitivity and normalizes visual cortex activation in individuals with amblyopia.

    Spiegel, Daniel P; Byblow, Winston D; Hess, Robert F; Thompson, Benjamin

    2013-10-01

    Amblyopia is a neurodevelopmental disorder of vision that is associated with abnormal patterns of neural inhibition within the visual cortex. This disorder is often considered to be untreatable in adulthood because of insufficient visual cortex plasticity. There is increasing evidence that interventions that target inhibitory interactions within the visual cortex, including certain types of noninvasive brain stimulation, can improve visual function in adults with amblyopia. We tested the hypothesis that anodal transcranial direct current stimulation (a-tDCS) would improve visual function in adults with amblyopia by enhancing the neural response to inputs from the amblyopic eye. Thirteen adults with amblyopia participated and contrast sensitivity in the amblyopic and fellow fixing eye was assessed before, during and after a-tDCS or cathodal tDCS (c-tDCS). Five participants also completed a functional magnetic resonance imaging (fMRI) study designed to investigate the effect of a-tDCS on the blood oxygen level-dependent response within the visual cortex to inputs from the amblyopic versus the fellow fixing eye. A subgroup of 8/13 participants showed a transient improvement in amblyopic eye contrast sensitivity for at least 30 minutes after a-tDCS. fMRI measurements indicated that the characteristic cortical response asymmetry in amblyopes, which favors the fellow eye, was reduced by a-tDCS. These preliminary results suggest that a-tDCS deserves further investigation as a potential tool to enhance amblyopia treatment outcomes in adults.

  17. Evaluation of single-event upset tolerance on 64Mbit DRAM and 16Mbit DRAM

    Nemoto, N; Shindou, H; Matsuzaki, K; Akutsu, T; Matsuda, S [National Space Development Agency of Japan, Tokyo (Japan); Hirao, T; Itoh, H; Nashiyama, I

    1997-11-01

    In recent years, reduction in the mission cost is regarded as one of the most important matters, and thus much effort has been made to reduce the cost of electronic components used in spacecrafts without diminishing their performance. On this policy, there has been a growing interest in space application of commercial devices such as highly integrated memory ICs because of low prices and high performance of such devices. To ensure success in this application, it is indispensable to investigate radiation effects, e.g., single-event and total-dose effects, on commercial devices precisely. In the present study, we have evaluated single-event upset (SEU) tolerance for 1Mbit, 4Mbit SRAM and 16Mbit, 64Mbit DRAM by irradiation of high energy heavy ions such as 175MeV-Ar{sup 8+} and 450MeV-Xe{sup 23+}. We observed these SEU tolerance in space. (author)

  18. NASA Electronic Parts and Packaging Field Programmable Gate Array Single Event Effects Test Guideline Update

    Berg, Melanie D.; LaBel, Kenneth A.

    2018-01-01

    The following are updated or new subjects added to the FPGA SEE Test Guidelines manual: academic versus mission specific device evaluation, single event latch-up (SEL) test and analysis, SEE response visibility enhancement during radiation testing, mitigation evaluation (embedded and user-implemented), unreliable design and its affects to SEE Data, testing flushable architectures versus non-flushable architectures, intellectual property core (IP Core) test and evaluation (addresses embedded and user-inserted), heavy-ion energy and linear energy transfer (LET) selection, proton versus heavy-ion testing, fault injection, mean fluence to failure analysis, and mission specific system-level single event upset (SEU) response prediction. Most sections within the guidelines manual provide information regarding best practices for test structure and test system development. The scope of this manual addresses academic versus mission specific device evaluation and visibility enhancement in IP Core testing.

  19. Development of heavy-ion irradiation technique for single-event in semiconductor devices

    Nemoto, Norio; Akutsu, Takao; Matsuda, Sumio [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan). Tsukuba Space Center; Naitoh, Ichiro; Itoh, Hisayoshi; Agematsu, Takashi; Kamiya, Tomihiro; Nashiyama, Isamu

    1997-03-01

    Heavy-ion irradiation technique has been developed for the evaluation of single-event effects on semiconductor devices. For the uniform irradiation of high energy heavy ions to device samples, we have designed and installed a magnetic beam-scanning system in a JAERI cyclotron beam course. It was found that scanned area was approximately 4 x 2 centimeters and that the deviation of ion fluence from the average value was less than 7%. (author)

  20. Prediction Methodology for Proton Single Event Burnout: Application to a STRIPFET Device

    Siconolfi, Sara; Oser, Pascal; Spiezia, Giovanni; Hubert, Guillaume; David, Jean-Pierre

    2015-01-01

    This paper presents a single event burnout (SEB) sensitivity characterization for power MOSFETs, independent from tests, through a prediction model issued from TCAD analysis and the knowledge of device topology. The methodology is applied to a STRIPFET device and compared to proton data obtained at PSI, showing a good agreement in the order of magnitude of proton SEB cross section, and thus validating the prediction model as an alternative device characterization with respect to SEB.

  1. TDRS-1 single event upsets and the effect of the space environment

    Wilkinson, D.C.; Daughtridge, S.C.; Stone, J.L.; Sauer, H.H.; Darling, P.

    1991-01-01

    The systematic recording of Single Event Upsets on TDRS-1 from 1984 to 1990 allows correlations to be drawn between those upsets and the space environment. In this paper, ground based neutron monitor data are used to illustrate the long-term relationship between galactic cosmic rays and TDRS-1 upsets. The short-term effects of energetic solar particles are illustrated with space environment data from GOES-7

  2. Estimation of the LET threshold of single event upset of microelectronics in experiments with Cf-252

    Kuznetsov, N.V.; Nymmik, R.A.

    1996-01-01

    A method is proposed for analyzing single event upsets (SEU) in large scale integration circuits of random access memory (RAM) when exposed to Cf-252 fission fragments. The method makes is possible to find the RAM linear energy transfer (LET) threshold to be used for estimations of RAM SEU rates in space. The method is illustrated by analyzing experimental data for the 2 x 8 kbit CMOS/bulk RAM. (author)

  3. In-flight and ground testing of single event upset sensitivity in static RAMs

    Johansson, K.; Dyreklev, P.; Granbom, B.; Calvet, C.; Fourtine, S.; Feuillatre, O.

    1998-01-01

    This paper presents the results from in-flight measurements of single event upsets (SEU) in static random access memories (SRAM) caused by the atmospheric radiation environment at aircraft altitudes. The memory devices were carried on commercial airlines at high altitude and mainly high latitudes. The SEUs were monitored by a Component Upset Test Equipment (CUTE), designed for this experiment. The in flight results are compared to ground based testing with neutrons from three different sources

  4. Anthology of the development of radiation transport tools as applied to single event effects

    Akkerman, A.; Barak, J.; Murat, M.; Duzellier, S.; Hubert, G.; Gaillardin, M.; Raine, M.; Jordan, T.; Jun, I.; Koontz, S.; Reddell, B.; O'Neill, P.; Foster, C.; Culpepper, W.; Lei, F.; McNulty, P.; Nieminen, P.; Saigne, F.; Wrobel, F.; Santin, G.; Sihver, L.; Tang, H.H.K.; Truscott, P.R.

    2013-01-01

    This anthology contains contributions from eleven different groups, each developing and/or applying Monte Carlo-based radiation transport tools to simulate a variety of effects that result from energy transferred to a semiconductor material by a single particle event. The topics span from basic mechanisms for single-particle induced failures to applied tasks like developing web sites to predict on-orbit single event failure rates using Monte Carlo radiation transport tools. (authors)

  5. Anthology of the Development of Radiation Transport Tools as Applied to Single Event Effects

    Reed, R. A.; Weller, R. A.; Akkerman, A.; Barak, J.; Culpepper, W.; Duzellier, S.; Foster, C.; Gaillardin, M.; Hubert, G.; Jordan, T.; Jun, I.; Koontz, S.; Lei, F.; McNulty, P.; Mendenhall, M. H.; Murat, M.; Nieminen, P.; O'Neill, P.; Raine, M.; Reddell, B.; Saigné, F.; Santin, G.; Sihver, L.; Tang, H. H. K.; Truscott, P. R.; Wrobel, F.

    2013-06-01

    This anthology contains contributions from eleven different groups, each developing and/or applying Monte Carlo-based radiation transport tools to simulate a variety of effects that result from energy transferred to a semiconductor material by a single particle event. The topics span from basic mechanisms for single-particle induced failures to applied tasks like developing websites to predict on-orbit single event failure rates using Monte Carlo radiation transport tools.

  6. KChIP2 genotype dependence of transient outward current (Ito) properties in cardiomyocytes isolated from male and female mice.

    Waldschmidt, Lara; Junkereit, Vera; Bähring, Robert

    2017-01-01

    The transient outward current (Ito) in cardiomyocytes is largely mediated by Kv4 channels associated with Kv Channel Interacting Protein 2 (KChIP2). A knockout model has documented the critical role of KChIP2 in Ito expression. The present study was conducted to characterize in both sexes the dependence of Ito properties, including current magnitude, inactivation kinetics, recovery from inactivation and voltage dependence of inactivation, on the number of functional KChIP2 alleles. For this purpose we performed whole-cell patch-clamp experiments on isolated left ventricular cardiomyocytes from male and female mice which had different KChIP2 genotypes; i.e., wild-type (KChIP2+/+), heterozygous knockout (KChIP2+/-) or complete knockout of KChIP2 (KChIP2-/-). We found in both sexes a KChIP2 gene dosage effect (i.e., a proportionality between number of alleles and phenotype) on Ito magnitude, however, concerning other Ito properties, KChIP2+/- resembled KChIP2+/+. Only in the total absence of KChIP2 (KChIP2-/-) we observed a slowing of Ito kinetics, a slowing of recovery from inactivation and a negative shift of a portion of the voltage dependence of inactivation. In a minor fraction of KChIP2-/- myocytes Ito was completely lost. The distinct KChIP2 genotype dependences of Ito magnitude and inactivation kinetics, respectively, seen in cardiomyocytes were reproduced with two-electrode voltage-clamp experiments on Xenopus oocytes expressing Kv4.2 and different amounts of KChIP2. Our results corroborate the critical role of KChIP2 in controlling Ito properties. They demonstrate that the Kv4.2/KChIP2 interaction in cardiomyocytes is highly dynamic, with a clear KChIP2 gene dosage effect on Kv4 channel surface expression but not on inactivation gating.

  7. Results of single-event multilevel orthopedic surgery in children with cerebral palsy

    Akhmed Tomov

    2015-11-01

    Full Text Available Background: Single-event multilevel orthopedic surgery is a modern approach in the operative treatment of children with cerebral palsy. Methods: Single-event multilevel orthopedic surgery was carried out in 108 patients with cerebral palsy. Patients’ average age was 11.3±1.7 years. Surgical results were analyzed at follow-up after 18 to 24 months, by way of detailed physical examination, functional assessment, imaging, the Edinburgh Visual Gait Score and Gillette Functional Assessment Questionnaire. Results: In our series, 647 procedures were performed during 141 surgeries. Patients had an average of 4.59 procedures per surgery. Observational gait analysis showed an improvement in stance and swing gait phases in ambulatory children. According to the Gillette Functional Assessment Questionnaire, an increase of functional level was noted in 50 patients but did not change in 32 patients. Conclusions: For children with cerebral palsy, single-event multilevel surgery is defined as two or more surgical procedures of the soft tissue or bone at two or more anatomical levels during one operative procedure. In cases where a large volume of surgery is required, two separate operations with a short break in between, but requiring only one hospital admission and one rehabilitation period, are also included. This approach requires adapted methods of surgical intervention, and appropriate methods of anesthesia and pain control in the postoperative period to the start of rehabilitation. Compliance with the above principles allowed the necessary correction of orthopedic complications to be achieved in all cases.

  8. Changes in the action potential and transient outward potassium current in cardiomyocytes during acute cardiac rejection in rats.

    Luo, Wenqi; Jia, Yixin; Zheng, Shuai; Li, Yan; Han, Jie; Meng, Xu

    2017-01-01

    Acute cardiac rejection contributes to the changes in the electrophysiological properties of grafted hearts. However, the electrophysiological changes of cardiomyocytes during acute cardiac rejection are still unknown. An understanding of the electrophysiological mechanisms of cardiomyocytes could improve the diagnosis and treatment of acute cardiac rejection. So it is important to characterize the changes in the action potential ( AP ) and the transient outward potassium current ( I to ) in cardiomyocytes during acute cardiac rejection. Heterotopic heart transplantation was performed in allogeneic [Brown Norway (BN)-to-Lewis] and isogeneic (BN-to-BN) rats. Twenty models were established in each group. Ten recipients were sacrificed at the 2nd day and the other ten recipients were sacrificed at the 4 th day after the operation in each group. Histopathological examinations of the grafted hearts were performed in half of the recipients in each group randomly. The other half of the grafted hearts were excised rapidly and enzymatically dissociated to obtain single cardiomyocytes. The AP and I to current were recorded using the whole cell patch-clamp technique. Forty grafted hearts were successfully harvested and used in experiments. Histologic examination showed mild rejection at the 2 nd day and moderate rejection at the 4 th day in the allogeneic group after cardiac transplantation, while no evidence of histologic lesions of rejection were observed in the isogeneic group. Compared with the isogeneic group, the action potential duration ( APD ) of cardiomyocytes in the allogeneic group was significantly prolonged ( APD 90 was 49.28±5.621 mV in the isogeneic group and 88.08±6.445 mV in the allogeneic group at the 2 nd day, P=0.0016; APD 90 was 59.34±5.183 mV in the isogeneic group and 104.0±9.523 mV in the allogeneic group at the 4 th day, P=0.0064). The current density of I to was significantly decreased at the 4 th day after cardiac transplantation. The APD of

  9. A novel transient rotor current control scheme of a doubly-fed induction generator equipped with superconducting magnetic energy storage for voltage and frequency support

    Shen, Yang-Wu; Ke, De-Ping; Sun, Yuan-Zhang; Daniel, Kirschen; Wang, Yi-Shen; Hu, Yuan-Chao

    2015-07-01

    A novel transient rotor current control scheme is proposed in this paper for a doubly-fed induction generator (DFIG) equipped with a superconducting magnetic energy storage (SMES) device to enhance its transient voltage and frequency support capacity during grid faults. The SMES connected to the DC-link capacitor of the DFIG is controlled to regulate the transient dc-link voltage so that the whole capacity of the grid side converter (GSC) is dedicated to injecting reactive power to the grid for the transient voltage support. However, the rotor-side converter (RSC) has different control tasks for different periods of the grid fault. Firstly, for Period I, the RSC injects the demagnetizing current to ensure the controllability of the rotor voltage. Then, since the dc stator flux degenerates rapidly in Period II, the required demagnetizing current is low in Period II and the RSC uses the spare capacity to additionally generate the reactive (priority) and active current so that the transient voltage capability is corroborated and the DFIG also positively responds to the system frequency dynamic at the earliest time. Finally, a small amount of demagnetizing current is provided after the fault clearance. Most of the RSC capacity is used to inject the active current to further support the frequency recovery of the system. Simulations are carried out on a simple power system with a wind farm. Comparisons with other commonly used control methods are performed to validate the proposed control method. Project supported by the National Natural Science Foundation of China (Grant No. 51307124) and the Major Program of the National Natural Science Foundation of China (Grant No. 51190105).

  10. Transient magnetic currents through a molecular bridge: limits to reduction of non-equilibrium Green's functions to a generalized master equation

    Kalvová, Anděla; Velický, B.; Špička, Václav

    2017-01-01

    Roč. 30, č. 3 (2017), s. 807-811 ISSN 1557-1939 Institutional support: RVO:68378271 Keywords : non-equilibrium * initial conditions * transient currents * molecular islands Subject RIV: BM - Solid Matter Physics ; Magnetism OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.) Impact factor: 1.180, year: 2016

  11. Minimalist fault-tolerance techniques for mitigating single-event effects in non-radiation-hardened microcontrollers

    Caldwell, Douglas Wyche

    Commercial microcontrollers--monolithic integrated circuits containing microprocessor, memory and various peripheral functions--such as are used in industrial, automotive and military applications, present spacecraft avionics system designers an appealing mix of higher performance and lower power together with faster system-development time and lower unit costs. However, these parts are not radiation-hardened for application in the space environment and Single-Event Effects (SEE) caused by high-energy, ionizing radiation present a significant challenge. Mitigating these effects with techniques which require minimal additional support logic, and thereby preserve the high functional density of these devices, can allow their benefits to be realized. This dissertation uses fault-tolerance to mitigate the transient errors and occasional latchups that non-hardened microcontrollers can experience in the space radiation environment. Space systems requirements and the historical use of fault-tolerant computers in spacecraft provide context. Space radiation and its effects in semiconductors define the fault environment. A reference architecture is presented which uses two or three microcontrollers with a combination of hardware and software voting techniques to mitigate SEE. A prototypical spacecraft function (an inertial measurement unit) is used to illustrate the techniques and to explore how real application requirements impact the fault-tolerance approach. Low-cost approaches which leverage features of existing commercial microcontrollers are analyzed. A high-speed serial bus is used for voting among redundant devices and a novel wire-OR output voting scheme exploits the bidirectional controls of I/O pins. A hardware testbed and prototype software were constructed to evaluate two- and three-processor configurations. Simulated Single-Event Upsets (SEUs) were injected at high rates and the response of the system monitored. The resulting statistics were used to evaluate

  12. Signature of transient boundary layer processes observed with Viking

    Woch, J.; Lundin, R.

    1992-01-01

    Transient penetration of plasma with magnetosheath origin is frequently observed with the hot plasma experiment on board the Viking satellite at auroral latitudes in the dayside magnetosphere. The injected magnetosheath ions exhibit a characteristic pitch angle/energy dispersion pattern earlier reported for solar wind ions accessing the magnetosphere in the cusp regions. In contrast to the continuous plasma entry in the cusp, the events discussed here show temporal features which suggest a connection to transient processes at or in the vicinity of the magnetospheric boundary. A single event study confirms previously published observations that the injected ions flow essentially tailward with a velocity comparable to the magnetosheath flow and that the energy spectra inferred for the source population resemble magnetosheath spectra. Based on a statistical study, it is found that these events are predominantly observed around 0800 and 1600 MLT, in a region populated by both rung current/plasma sheet particles and by particles whose source is the magnetosheath plasma. Magnetic field line tracing based on the Tsyganenko magnetic field model yields a scatter of the source locations around the mid-latitude region of the magnetospheric boundary. The probability for these events to occur is highest when the interplanetary magnetic field (IMF) is confined to the ecliptic plane. The connection of the events to transient impulsive solar wind/magnetosphere interaction processes, such as transient reconnection (FTE), impulsive plasma transfer, Kelvin Helmholtz instabilities, and solar wind pressure pulses, is discussed. A relation with transient reconnection can be excluded

  13. Correlation between photoconductivity in nanocrystalline titania and short circuit current transients in MEH-PPV/titania solar cells

    Xie, Z B; Henry, B M; Kirov, K R; Barkhouse, D A R; Burlakov, V M; Smith, H E; Grovenor, C R M; Assender, H E; Briggs, G A D; Kano, M; Tsukahara, Y

    2007-01-01

    We report the first experimental observation of a direct relationship between electron transport in different nanocrystalline TiO 2 thin films and the photovoltaic performance of TiO 2 /MEH-PPV composite solar cells made using these same TiO 2 films. We show that the transient behaviour in the composite solar cells under illumination can be explained by the transient photoconductivity performance of the TiO 2 layer

  14. Differential responses of rabbit ventricular and atrial transient outward current (Ito) to the Ito modulator NS5806.

    Cheng, Hongwei; Cannell, Mark B; Hancox, Jules C

    2017-03-01

    Transient outward potassium current (I to ) in the heart underlies phase 1 repolarization of cardiac action potentials and thereby affects excitation-contraction coupling. Small molecule activators of I to may therefore offer novel treatments for cardiac dysfunction, including heart failure and atrial fibrillation. NS5806 has been identified as a prototypic activator of canine I to This study investigated, for the first time, actions of NS5806 on rabbit atrial and ventricular I to Whole cell patch-clamp recordings of I to and action potentials were made at physiological temperature from rabbit ventricular and atrial myocytes. 10  μ mol/L NS5806 increased ventricular I to with a leftward shift in I to activation and accelerated restitution. At higher concentrations, stimulation of I to was followed by inhibition. The EC 50 for stimulation was 1.6  μ mol/L and inhibition had an IC 50 of 40.7  μ mol/L. NS5806 only inhibited atrial I to (IC 50 of 18  μ mol/L) and produced a modest leftward shifts in I to activation and inactivation, without an effect on restitution. 10  μ mol/L NS5806 shortened ventricular action potential duration (APD) at APD 20 -APD 90 but prolonged atrial APD NS5806 also reduced atrial AP upstroke and amplitude, consistent with an additional atrio-selective effect on Na + channels. In contrast to NS5806, flecainide, which discriminates between Kv1.4 and 4.x channels, produced similar levels of inhibition of ventricular and atrial I to NS5806 discriminates between rabbit ventricular and atrial I to, with mixed activator and inhibitor actions on the former and inhibitor actions against the later. NS5806 may be of significant value for pharmacological interrogation of regional differences in native cardiac I to . © 2017 The Authors. Physiological Reports published by Wiley Periodicals, Inc. on behalf of The Physiological Society and the American Physiological Society.

  15. Single-Event Transgene Product Levels Predict Levels in Genetically Modified Breeding Stacks.

    Gampala, Satyalinga Srinivas; Fast, Brandon J; Richey, Kimberly A; Gao, Zhifang; Hill, Ryan; Wulfkuhle, Bryant; Shan, Guomin; Bradfisch, Greg A; Herman, Rod A

    2017-09-13

    The concentration of transgene products (proteins and double-stranded RNA) in genetically modified (GM) crop tissues is measured to support food, feed, and environmental risk assessments. Measurement of transgene product concentrations in breeding stacks of previously assessed and approved GM events is required by many regulatory authorities to evaluate unexpected transgene interactions that might affect expression. Research was conducted to determine how well concentrations of transgene products in single GM events predict levels in breeding stacks composed of these events. The concentrations of transgene products were compared between GM maize, soybean, and cotton breeding stacks (MON-87427 × MON-89034 × DAS-Ø15Ø7-1 × MON-87411 × DAS-59122-7 × DAS-40278-9 corn, DAS-81419-2 × DAS-44406-6 soybean, and DAS-21023-5 × DAS-24236-5 × SYN-IR102-7 × MON-88913-8 × DAS-81910-7 cotton) and their component single events (MON-87427, MON-89034, DAS-Ø15Ø7-1, MON-87411, DAS-59122-7, and DAS-40278-9 corn, DAS-81419-2, and DAS-44406-6 soybean, and DAS-21023-5, DAS-24236-5, SYN-IR102-7, MON-88913-8, and DAS-81910-7 cotton). Comparisons were made within a crop and transgene product across plant tissue types and were also made across transgene products in each breeding stack for grain/seed. Scatter plots were generated comparing expression in the stacks to their component events, and the percent of variability accounted for by the line of identity (y = x) was calculated (coefficient of identity, I 2 ). Results support transgene concentrations in single events predicting similar concentrations in breeding stacks containing the single events. Therefore, food, feed, and environmental risk assessments based on concentrations of transgene products in single GM events are generally applicable to breeding stacks composed of these events.

  16. Single event upsets in semiconductor devices induced by highly ionising particles.

    Sannikov, A V

    2004-01-01

    A new model of single event upsets (SEUs), created in memory cells by heavy ions and high energy hadrons, has been developed. The model takes into account the spatial distribution of charge collection efficiency over the cell area not considered in previous approaches. Three-dimensional calculations made by the HADRON code have shown good agreement with experimental data for the energy dependence of proton SEU cross sections, sensitive depths and other SEU observables. The model is promising for prediction of SEU rates for memory chips exposed in space and in high-energy experiments as well as for the development of a high-energy neutron dosemeter based on the SEU effect.

  17. Calculation of neutron-induced single-event upset cross sections for semiconductor memory devices

    Ikeuchi, Taketo; Watanabe, Yukinobu; Nakashima, Hideki; Sun, Weili

    2001-01-01

    Neutron-induced single-event upset (SEU) cross sections for semiconductor memory devices are calculated by the Burst Generation Rate (BGR) method using LA150 data and QMD calculation in the neutron energy range between 20 MeV and 10 GeV. The calculated results are compared with the measured SEU cross sections for energies up to 160 MeV, and the validity of the calculation method and the nuclear data used is verified. The kind of reaction products and the neutron energy range that have the most effect on SEU are discussed. (author)

  18. Analysis of cosmic ray neutron-induced single-event phenomena

    Tukamoto, Yasuyuki; Watanabe, Yukinobu; Nakashima, Hideki

    2003-01-01

    We have developed a database of cross sections for the n+ 28 Si reaction in the energy range between 2 MeV and 3 GeV in order to analyze single-event upset (SEU) phenomena induced by cosmic-ray neutrons in semiconductor memory devices. The data are applied to calculations of SEU cross sections using the Burst Generation Rate (BGR) model including two parameters, critical charge and effective depth. The calculated results are compared with measured SEU cross-sections for energies up to 160 MeV, and the reaction products that provide important effects on SEU are mainly investigated. (author)

  19. Single Event Upset Energy Dependence In a Buck-Converter Power Supply Design

    Drake, G; The ATLAS collaboration; De Lurgio, P; Stanek, R; Mellado, B; Gopalakrishnan, A; Mahadik, S; Reed, R; Senthilkumaran, A

    2012-01-01

    We present a study of Single Event Upsets performed on a commercial pulse-width modulator controller chip that we are using for a switching power supply design for the Atlas Tile Calorimeter at the LHC. We performed tests to study the probability of an SEU occurring as a function of incident particle (hadron) energy. We compare the results with prediction from theory. We discuss the performance of the circuit, and perform an analysis using Bendel parameters. We also present a solution that we found using external circuitry that eliminates the effect.

  20. Fast recognition of single molecules based on single-event photon statistics

    Dong Shuangli; Huang Tao; Liu Yuan; Wang Jun; Zhang Guofeng; Xiao Liantuan; Jia Suotang

    2007-01-01

    Mandel's Q parameter, which is determined from single-event photon statistics, provides an alternative way to recognize single molecules with fluorescence detection, other than the second-order correlation function. It is shown that the Q parameter of an assumed ideal double-molecule fluorescence with the same average photon number as that of the sample fluorescence can act as the criterion for single-molecule recognition. The influence of signal-to-background ratio and the error estimates for photon statistics are also presented. We have applied this method to ascertain single Cy5 dye molecules within hundreds of milliseconds

  1. Relationship between single-event upset immunity and fabrication processes of recent memories

    Nemoto, N.; Shindou, H.; Kuboyama, S.; Matsuda, S.; Itoh, H.; Okada, S.; Nashiyama, I.

    1999-01-01

    Single-Event upset (SEU) immunity for commercial devices were evaluated by irradiation tests using high-energy heavy ions. We show test results and describe the relationship between observed SEU and structures/fabrication processes. We have evaluated single-even upset (SEU) tolerance of recent commercial memory devices using high energy heavy ions in order to find relationship between SEU rate and their fabrication process. It was revealed that the change of the process parameter gives much effect for the SEU rate of the devices. (authors)

  2. Definition of Capabilities Needed for a Single Event Effects Test Facility

    Riemer, Bernie; Gallmeier, Franz X.

    2014-01-01

    The Federal Aviation Administration (FAA) is contemplating new regulations mandating testing of the vulnerability of flight-critical avionics to single event effects (SEE). A limited number of high-energy neutron test facilities currently serve the SEE industrial and institutional research community. The FAA recognizes that existing facilities have insufficient test capacity to meet new demand from such mandates; it desires more flexible irradiation capabilities to test complete, large systems and would like capabilities to address greater concerns for thermal neutrons. For this reason, the FAA funded this study by Spallation Neutron Source (SNS) staff with the ultimate aim of developing options for SEE test facilities using high-energy neutrons at the SNS complex. After an investigation of current SEE test practices and assessment of future testing requirements, three concepts were identified covering a range of test functionality, neutron flux levels, and fidelity to the atmospheric neutron spectrum. The costs and times required to complete each facility were also estimated. SEE testing is generally performed by accelerating the event rate to a point where the effects are still dominated by single events and double event causes of failures are negligible. In practice, acceleration factors of as high as 10 6 are applicable for component testing, whereas for systems testing acceleration factors of 10 4 seem to be the upper limit. It is strongly desirable that the irradiation facility be tunable over a large range of high-energy neutron fluxes of 10 2 - 10 4 n/cm 2 /s for systems testing and from 10 4 - 10 7 n/cm 2 /s for components testing. The most capable, most flexible, and highest-test-capacity option is a new stand-alone target station named the High-Energy neutron Test Station (HETS). It is also the most expensive option, with a cost to complete of approximately $100 million. Dual test enclosures would allow for simultaneous testing activity effectively

  3. Definition of Capabilities Needed for a Single Event Effects Test Facility

    Riemer, Bernie [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Spallation Neutron Source (SNS); Gallmeier, Franz X. [Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States). Spallation Neutron Source (SNS)

    2014-12-01

    The Federal Aviation Administration (FAA) is contemplating new regulations mandating testing of the vulnerability of flight-critical avionics to single event effects (SEE). A limited number of high-energy neutron test facilities currently serve the SEE industrial and institutional research community. The FAA recognizes that existing facilities have insufficient test capacity to meet new demand from such mandates; it desires more flexible irradiation capabilities to test complete, large systems and would like capabilities to address greater concerns for thermal neutrons. For this reason, the FAA funded this study by Spallation Neutron Source (SNS) staff with the ultimate aim of developing options for SEE test facilities using high-energy neutrons at the SNS complex. After an investigation of current SEE test practices and assessment of future testing requirements, three concepts were identified covering a range of test functionality, neutron flux levels, and fidelity to the atmospheric neutron spectrum. The costs and times required to complete each facility were also estimated. SEE testing is generally performed by accelerating the event rate to a point where the effects are still dominated by single events and double event causes of failures are negligible. In practice, acceleration factors of as high as 106 are applicable for component testing, whereas for systems testing acceleration factors of 104 seem to be the upper limit. It is strongly desirable that the irradiation facility be tunable over a large range of high-energy neutron fluxes of 102 - 104 n/cm²/s for systems testing and from 104 - 107 n/cm²/s for components testing. The most capable, most flexible, and highest-test-capacity option is a new stand-alone target station named the High-Energy neutron Test Station (HETS). It is also the most expensive option, with a cost to complete of approximately $100 million. Dual test enclosures would

  4. Transient Receptor Potential Vanilloid 4 Activation-Induced Increase in Glycine-Activated Current in Mouse Hippocampal Pyramidal Neurons

    Mengwen Qi

    2018-02-01

    Full Text Available Background/Aims: Glycine plays an important role in regulating hippocampal inhibitory/ excitatory neurotransmission through activating glycine receptors (GlyRs and acting as a co-agonist of N-methyl-d-aspartate-type glutamate receptors. Activation of transient receptor potential vanilloid 4 (TRPV4 is reported to inhibit hippocampal A-type γ-aminobutyric acid receptor, a ligand-gated chloride ion channel. GlyRs are also ligand-gated chloride ion channels and this paper aimed to explore whether activation of TRPV4 could modulate GlyRs. Methods: Whole-cell patch clamp recording was employed to record glycine-activated current (IGly and Western blot was conducted to assess GlyRs subunits protein expression. Results: Application of TRPV4 agonist (GSK1016790A or 5,6-EET increased IGly in mouse hippocampal CA1 pyramidal neurons. This action was blocked by specific antagonists of TRPV4 (RN-1734 or HC-067047 and GlyR (strychnine, indicating that activation of TRPV4 increases strychnine-sensitive GlyR function in mouse hippocampal pyramidal neurons. GSK1016790A-induced increase in IGly was significantly attenuated by protein kinase C (PKC (BIM II or D-sphingosine or calcium/calmodulin-dependent protein kinase II (CaMKII (KN-62 or KN-93 antagonists but was unaffected by protein kinase A or protein tyrosine kinase antagonists. Finally, hippocampal protein levels of GlyR α1 α2, α3 and β subunits were not changed by treatment with GSK1016790A for 30 min or 1 h, but GlyR α2, α3 and β subunits protein levels increased in mice that were intracerebroventricularly (icv. injected with GSK1016790A for 5 d. Conclusion: Activation of TRPV4 increases GlyR function and expression, and PKC and CaMKII signaling pathways are involved in TRPV4 activation-induced increase in IGly. This study indicates that GlyRs may be effective targets for TRPV4-induced modulation of hippocampal inhibitory neurotransmission.

  5. Single event effects induced by 15.14 MeV/u sup 1 sup 3 sup 6 Xe ions

    Hou Ming Dong; LiuJie; Wang Zhi Guang; Jin Yun Fan; Zhu Zhi Yong; Zhen Hong Lou; Liu Chang Long; Chen Xiao Xi; Wei Xin Guo; Zhang Li; Fan You Cheng; Zhu Zhou Rong; Zhang Yiting

    2002-01-01

    Single event effects induced by 15.14 MeV/u sup 1 sup 3 sup 6 Xe ions in different batches of 32k x 8 bits static random access memory are studied. The incident angle dependences of the cross sections for single event upset and single event latch up are presented. The SEE cross sections are plotted versus energy loss instead of linear energy transfer value in sensitive region. The depth of sensitive volume and thickness of 'dead' layer above the sensitive volume are estimated

  6. Single event effect hardness for the front-end ASICs in the DAMPE satellite BGO calorimeter

    Gao, Shan-Shan; Jiang, Di; Feng, Chang-Qing; Xi, Kai; Liu, Shu-Bin; An, Qi

    2016-01-01

    The Dark Matter Particle Explorer (DAMPE) is a Chinese scientific satellite designed for cosmic ray studies with a primary scientific goal of indirect detection of dark matter particles. As a crucial sub-detector, the BGO calorimeter measures the energy spectrum of cosmic rays in the energy range from 5 GeV to 10 TeV. In order to implement high-density front-end electronics (FEE) with the ability to measure 1848 signals from 616 photomultiplier tubes on the strictly constrained satellite platform, two kinds of 32-channel front-end ASICs, VA160 and VATA160, are customized. However, a space mission period of more than 3 years makes single event effects (SEEs) become threats to reliability. In order to evaluate SEE sensitivities of these chips and verify the effectiveness of mitigation methods, a series of laser-induced and heavy ion-induced SEE tests were performed. Benefiting from the single event latch-up (SEL) protection circuit for power supply, the triple module redundancy (TMR) technology for the configuration registers and the optimized sequential design for the data acquisition process, 52 VA160 chips and 32 VATA160 chips have been applied in the flight model of the BGO calorimeter with radiation hardness assurance. Supported by Strategic Priority Research Program on Space Science of the Chinese Academy of Sciences (XDA04040202-4) and Fundamental Research Funds for the Central Universities (WK2030040048)

  7. Single-Event Effect Performance of a Conductive-Bridge Memory EEPROM

    Chen, Dakai; Wilcox, Edward; Berg, Melanie; Kim, Hak; Phan, Anthony; Figueiredo, Marco; Seidleck, Christina; LaBel, Kenneth

    2015-01-01

    We investigated the heavy ion single-event effect (SEE) susceptibility of the industry’s first stand-alone memory based on conductive-bridge memory (CBRAM) technology. The device is available as an electrically erasable programmable read-only memory (EEPROM). We found that single-event functional interrupt (SEFI) is the dominant SEE type for each operational mode (standby, dynamic read, and dynamic write/read). SEFIs occurred even while the device is statically biased in standby mode. Worst case SEFIs resulted in errors that filled the entire memory space. Power cycle did not always clear the errors. Thus the corrupted cells had to be reprogrammed in some cases. The device is also vulnerable to bit upsets during dynamic write/read tests, although the frequency of the upsets are relatively low. The linear energy transfer threshold for cell upset is between 10 and 20 megaelectron volts per square centimeter per milligram, with an upper limit cross section of 1.6 times 10(sup -11) square centimeters per bit (95 percent confidence level) at 10 megaelectronvolts per square centimeter per milligram. In standby mode, the CBRAM array appears invulnerable to bit upsets.

  8. Single event upsets calculated from new ENDF/B-VI proton and neutron data up to 150 MeV

    Chadwick, M.B.

    1999-01-01

    Single-event upsets (SEU) in microelectronics are calculated from newly-developed silicon nuclear reaction recoil data that extend up to 150 MeV, for incident protons and neutrons. Calculated SEU cross sections are compared with measured data

  9. Characterization of System Level Single Event Upset (SEU) Responses using SEU Data, Classical Reliability Models, and Space Environment Data

    Berg, Melanie; Label, Kenneth; Campola, Michael; Xapsos, Michael

    2017-01-01

    We propose a method for the application of single event upset (SEU) data towards the analysis of complex systems using transformed reliability models (from the time domain to the particle fluence domain) and space environment data.

  10. Single-Event Effect Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky Diode

    Lauenstein, J.-M.; Casey, M. C.; Wilcox, E. P.; Kim, Hak; Topper, A. D.

    2014-01-01

    This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.

  11. The influence of internal current loop on transient response performance of I-V droop controlled paralleled DC-DC converters

    Wang, Haojie; Han, Minxiao; Guerrero, Josep M.

    2017-01-01

    The external droop control loop of I-V droop control is designed as a voltage loop with embedded virtual impedance, so the internal current loop plays a major role in the system bandwidth. Thus, in this paper, the influence of internal current loop on transient response performance of I-V droop...... controlled paralleled dc-dc converters is analyzed, which is guided and significant for its industry application. The model which is used for dynamic analysis is built, and the root locus method is used based on the model to analyze the dynamic response of the system by shifting different control parameters...

  12. Influence of edge effects on single event upset susceptibility of SOI SRAMs

    Gu, Song; Liu, Jie; Zhao, Fazhan; Zhang, Zhangang; Bi, Jinshun; Geng, Chao; Hou, Mingdong; Liu, Gang; Liu, Tianqi; Xi, Kai

    2015-01-01

    An experimental investigation of the single event upset (SEU) susceptibility for heavy ions at tilted incidence was performed. The differences of SEU cross-sections between tilted incidence and normal incidence at equivalent effective linear energy transfer were 21% and 57% for the silicon-on-insulator (SOI) static random access memories (SRAMs) of 0.5 μm and 0.18 μm feature size, respectively. The difference of SEU cross-section raised dramatically with increasing tilt angle for SOI SRAM of deep-submicron technology. The result of CRÈME-MC simulation for tilted irradiation of the sensitive volume indicates that the energy deposition spectrum has a substantial tail extending into the low energy region. The experimental results show that the influence of edge effects on SEU susceptibility cannot be ignored in particular with device scaling down

  13. Single Event Upset in Static Random Access Memories in Atmospheric Neutron Environments

    Arita, Yutaka; Takai, Mikio; Ogawa, Izumi; Kishimoto, Tadafumi

    2003-07-01

    Single-event upsets (SEUs) in a 0.4 μm 4 Mbit complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) were investigated in various atmospheric neutron environments at sea level, at an altitude of 2612 m mountain, at an altitude of commercial airplane, and at an underground depth of 476 m. Neutron-induced SEUs increase with the increase in altitude. For a device with a borophosphosilicate glass (BPSG) film, SEU rates induced by thermal neutrons increase with the decrease in the cell charge of a memory cell. A thermal neutron-induced SEU is significant in SRAMs with a small cell charge. With the conditions of small cell charge, thermal neutron-induced SEUs account for 60% or more of the total neutron-induced SEUs. The SEU rate induced by atmospheric thermal neutrons can be estimated by an acceleration test using 252Cf.

  14. A simple analytical model of single-event upsets in bulk CMOS

    Sogoyan, Armen V.; Chumakov, Alexander I.; Smolin, Anatoly A., E-mail: aasmol@spels.ru; Ulanova, Anastasia V.; Boruzdina, Anna B.

    2017-06-01

    During the last decade, multiple new methods of single event upset (SEU) rate prediction for aerospace systems have been proposed. Despite different models and approaches being employed in these methods, they all share relatively high usage complexity and require information about a device that is not always available to an end user. This work presents an alternative approach to estimating SEU cross-section as a function of linear energy transfer (LET) that can be further developed into a method of SEU rate prediction. The goal is to propose a simple, yet physics-based, approach with just two parameters that can be used even in situations when only a process node of the device is known. The developed approach is based on geometrical interpretation of SEU cross-section and an analytical solution to the diffusion problem obtained for a simplified IC topology model. A good fit of the model to the experimental data encompassing 7 generations of SRAMs is demonstrated.

  15. Radiation Fields in High Energy Accelerators and their impact on Single Event Effects

    García Alía, Rubén; Wrobel, Frédéric; Brugger, Markus

    Including calculation models and measurements for a variety of electronic components and their concerned radiation environments, this thesis describes the complex radiation field present in the surrounding of a high-energy hadron accelerator and assesses the risks related to it in terms of Single Event Effects (SEE). It is shown that this poses not only a serious threat to the respective operation of modern accelerators but also highlights the impact on other high-energy radiation environments such as those for ground and avionics applications. Different LHC-like radiation environments are described in terms of their hadron composition and energy spectra. They are compared with other environments relevant for electronic component operation such as the ground-level, avionics or proton belt. The main characteristic of the high-energy accelerator radiation field is its mixed nature, both in terms of hadron types and energy interval. The threat to electronics ranges from neutrons of thermal energies to GeV hadron...

  16. Talys calculations for evaluation of neutron-induced single-event upset cross sections

    Bourselier, Jean-Christophe

    2005-08-15

    The computer code TALYS has been used to calculate interactions between cosmic-ray neutrons and silicon nuclei with the goal to describe single-event upset (SEU) cross sections in microelectronics devices. Calculations for the Si(n,X) reaction extend over an energy range of 2 to 200 MeV. The obtained energy spectra of the resulting residuals and light-ions have been integrated using several different critical charges as SEU threshold. It is found that the SEU cross section seems largely to be dominated by {sup 28}Si recoils from elastic scattering. Furthermore, the shape of the SEU cross section as a function of the energy of the incoming neutron changes drastically with decreasing critical charge. The results presented in this report stress the importance of performing studies at mono-energetic neutron beams to advance the understanding of the underlying mechanisms causing SEUs.

  17. Effectiveness Analysis of a Non-Destructive Single Event Burnout Test Methodology

    Oser, P; Spiezia, G; Fadakis, E; Foucard, G; Peronnard, P; Masi, A; Gaillard, R

    2014-01-01

    It is essential to characterize power MosFETs regarding their tolerance to destructive Single Event Burnouts (SEB). Therefore, several non-destructive test methods have been developed to evaluate the SEB cross-section of power devices. A power MosFET has been evaluated using a test circuit, designed according to standard non-destructive test methods discussed in the literature. Guidelines suggest a prior adaptation of auxiliary components to the device sensitivity before the radiation test. With the first value chosen for the de-coupling capacitor, the external component initiated destructive events and affected the evaluation of the cross-section. As a result, the influence of auxiliary components on the device cross-section was studied. This paper presents the obtained experimental results, supported by SPICE simulations, to evaluate and discuss how the circuit effectiveness depends on the external components.

  18. Single event upset studies on the CMS tracker APV25 readout chip

    Noah, E.; Bauer, T.; Bisello, D.; Faccio, F.; Friedl, M.; Fulcher, J.R.; Hall, G.; Huhtinen, M.; Kaminsky, A.; Pernicka, M.; Raymond, M.; Wyss, J.

    2002-01-01

    The microstrip tracker for the CMS experiment at the CERN Large Hadron Collider will be read out using APV25 chips. During high luminosity running the tracker will be exposed to particle fluxes up to 10 7 cm -2 s -1 , which raises concerns that the APV25 could occasionally suffer Single Event Upsets (SEUs). The effect of SEU on the APV25 has been studied to investigate implications for CMS detector operation and from the viewpoint of detailed circuit operation, to improve the understanding of its origin and what factors affect its magnitude. Simulations were performed to reconstruct the effects created by highly ionising particles striking sensitive parts of the circuits, along with consideration of the underlying mechanisms of charge deposition, collection and the consequences. A model to predict the behaviour of the memory circuits in the APV25 has been developed and data collected from dedicated experiments using both heavy ions and hadrons have been shown to support it

  19. Experimental setup for Single Event Effects at the São Paulo 8UD Pelletron Accelerator

    Aguiar, V. A. P.; Added, N.; Medina, N. H.; Macchione, E. L. A.; Tabacniks, M. H.; Aguirre, F. R.; Silveira, M. A. G.; Santos, R. B. B.; Seixas, L. E.

    2014-08-01

    In this work we present an experimental setup mounted in one of the beam lines at the São Paulo 8UD Pelletron Accelerator in order to study Single Event Effects in electronic devices. The basic idea is to use elastic scattering collisions to achieve a low-flux with a high-uniformity ion beam to irradiate several devices. 12C, 16O, 28Si, 35Cl and 63Cu beams were used to test the experimental setup. In this system it is possible to use efficiently LET values of 17 MeV/mg/cm2 for an external beam arrangement and up to 32 MeV/mg/cm2 for in-vacuum irradiation.

  20. Experimental setup for Single Event Effects at the São Paulo 8UD Pelletron Accelerator

    Aguiar, V.A.P. [Instituto de Física da Universidade de São Paulo, São Paulo, SP (Brazil); Added, N., E-mail: nemitala@if.usp.br [Instituto de Física da Universidade de São Paulo, São Paulo, SP (Brazil); Medina, N.H.; Macchione, E.L.A.; Tabacniks, M.H.; Aguirre, F.R. [Instituto de Física da Universidade de São Paulo, São Paulo, SP (Brazil); Silveira, M.A.G.; Santos, R.B.B. [Centro Universitário da FEI, São Bernardo do Campo, SP (Brazil); Seixas, L.E. [Centro de Tecnologia da Informação Renato Archer, Campinas, SP (Brazil)

    2014-08-01

    In this work we present an experimental setup mounted in one of the beam lines at the São Paulo 8UD Pelletron Accelerator in order to study Single Event Effects in electronic devices. The basic idea is to use elastic scattering collisions to achieve a low-flux with a high-uniformity ion beam to irradiate several devices. {sup 12}C, {sup 16}O, {sup 28}Si, {sup 35}Cl and {sup 63}Cu beams were used to test the experimental setup. In this system it is possible to use efficiently LET values of 17 MeV/mg/cm{sup 2} for an external beam arrangement and up to 32 MeV/mg/cm{sup 2} for in-vacuum irradiation.

  1. Talys calculations for evaluation of neutron-induced single-event upset cross sections

    Bourselier, Jean-Christophe

    2005-08-01

    The computer code TALYS has been used to calculate interactions between cosmic-ray neutrons and silicon nuclei with the goal to describe single-event upset (SEU) cross sections in microelectronics devices. Calculations for the Si(n,X) reaction extend over an energy range of 2 to 200 MeV. The obtained energy spectra of the resulting residuals and light-ions have been integrated using several different critical charges as SEU threshold. It is found that the SEU cross section seems largely to be dominated by 28 Si recoils from elastic scattering. Furthermore, the shape of the SEU cross section as a function of the energy of the incoming neutron changes drastically with decreasing critical charge. The results presented in this report stress the importance of performing studies at mono-energetic neutron beams to advance the understanding of the underlying mechanisms causing SEUs

  2. Acquisition and classification of static single-event upset cross section for SRAM-based FPGAs

    Yao Zhibin; Fan Ruyu; Guo Hongxia; Wang Zhongming; He Baoping; Zhang Fengqi; Zhang Keying

    2011-01-01

    In order to evaluate single event upsets (SEUs) in SRAM-based FPGAs and to find the sensitive resource in configuration memory, a heavy ions irradiation experiment was carried out on a Xilinx FPGAs device XCV300PQ240. The experiment was conducted to gain the static SEU cross section and classify the SEUs in configurations memory according to different resource uses. The results demonstrate that the inter-memory of SRAM-based FPGAs is extremely sensitive to heavy-ion-induced SEUs. The LUT and routing resources are the main source of SEUs in the configuration memory, which covers more than 97.46% of the total upsets. The SEU sensitivity of various resources is different. The IOB control bit and LUT elements are more sensitive,and more attention should be paid to the LUT elements in radiation hardening,which account for a quite large proportion of the configuration memory. (authors)

  3. Neutron-induced single event upsets in static RAMS observed at 10 km flight altitude

    Olsen, J.; Becher, P.E.; Fynbo, P.B.; Raaby, P. Schultz, J.

    1993-01-01

    Neutron induced single event upsets (SEUs) in static memory devices (SRAMs) have so far been seen only in laboratory environments. The authors report observations of 14 neutron induced SEUs at commercial aircraft flight altitudes as well. The observed SEU rate at 10 km flight altitude based on exposure of 160 standard 256 Kbit CMOS SRAMs is 4.8 · 10 -8 upsets/bit/day. In the laboratory 117 SRAMs of two different brands were irradiated with fast neutrons from a Pu-Be source. A total of 176 SEUs have been observed, among these are two SEU pairs. The upset rates from the laboratory tests are compared to those found in the airborne SRAMS

  4. Computing in the presence of soft bit errors. [caused by single event upset on spacecraft

    Rasmussen, R. D.

    1984-01-01

    It is shown that single-event-upsets (SEUs) due to cosmic rays are a significant source of single bit error in spacecraft computers. The physical mechanism of SEU, electron hole generation by means of Linear Energy Transfer (LET), it discussed with reference made to the results of a study of the environmental effects on computer systems of the Galileo spacecraft. Techniques for making software more tolerant of cosmic ray effects are considered, including: reducing the number of registers used by the software; continuity testing of variables; redundant execution of major procedures for error detection; and encoding state variables to detect single-bit changes. Attention is also given to design modifications which may reduce the cosmic ray exposure of on-board hardware. These modifications include: shielding components operating in LEO; removing low-power Schottky parts; and the use of CMOS diodes. The SEU parameters of different electronic components are listed in a table.

  5. Single event upset in static random access memories in atmospheric neutron environments

    Arita, Y; Ogawa, I; Kishimoto, T

    2003-01-01

    Single-event upsets (SEUs) in a 0.4 mu m 4Mbit complementary metal oxide semiconductor (CMOS) static random access memory (SRAM) were investigated in various atmospheric neutron environments at sea level, at an altitude of 2612 m mountain, at an altitude of commercial airplane, and at an underground depth of 476m. Neutron-induced SEUs increase with the increase in altitude. For a device with a borophosphosilicate glass (BPSG) film, SEU rates induced by thermal neutrons increase with the decrease in the cell charge of a memory cell. A thermal neutron-induced SEU is significant in SRAMs with a small cell charge. With the conditions of small cell charge, thermal neutron-induced SEUs account for 60% or more of the total neutron-induced SEUs. The SEU rate induced by atmospheric thermal neutrons can be estimated by an acceleration test using sup 2 sup 5 sup 2 Cf. (author)

  6. Study on relations between heavy ions single event upset cross sections and γ accumulated doses

    He Chaohui; Geng Bin; Wang Yanping; Peng Honglun; Yang Hailiang; Chen Xiaohua; Li Guozheng

    2002-01-01

    Experiments were done under 252 Cf and 60 Co γ source to study the relation between heavy ion Single Event Upset (SEU) cross sections and γ accumulated doses. There was no obvious rule and little influence of γ accumulated doses on SEU cross sections when Static Random Access Memories were in power off mode and static power on mode. In active measuring mode, the SEU cross section increased as the accumulated doses increasing when same data were written in memory cells. If reverse data, such as '55' and 'AA', were written in memory cells during the experiment, the SEU cross sections decreased to the level when memories were not irradiated under 60 Co γ source, even more small. It implied that the influence of γ accumulated doses on SEU cross sections can be set off by this method

  7. A simple analytical model of single-event upsets in bulk CMOS

    Sogoyan, Armen V.; Chumakov, Alexander I.; Smolin, Anatoly A.; Ulanova, Anastasia V.; Boruzdina, Anna B.

    2017-01-01

    During the last decade, multiple new methods of single event upset (SEU) rate prediction for aerospace systems have been proposed. Despite different models and approaches being employed in these methods, they all share relatively high usage complexity and require information about a device that is not always available to an end user. This work presents an alternative approach to estimating SEU cross-section as a function of linear energy transfer (LET) that can be further developed into a method of SEU rate prediction. The goal is to propose a simple, yet physics-based, approach with just two parameters that can be used even in situations when only a process node of the device is known. The developed approach is based on geometrical interpretation of SEU cross-section and an analytical solution to the diffusion problem obtained for a simplified IC topology model. A good fit of the model to the experimental data encompassing 7 generations of SRAMs is demonstrated.

  8. Causal relationships between solar proton events and single event upsets for communication satellites

    Lohmeyer, W. Q.; Cahoy, K.; Liu, Shiyang

    In this work, we analyze a historical archive of single event upsets (SEUs) maintained by Inmarsat, one of the world's leading providers of global mobile satellite communications services. Inmarsat has operated its geostationary communication satellites and collected extensive satellite anomaly and telemetry data since 1990. Over the course of the past twenty years, the satellites have experienced more than 226 single event upsets (SEUs), a catch-all term for anomalies that occur in a satellite's electronics such as bit-flips, trips in power supplies, and memory changes in attitude control systems. While SEUs are seemingly random and difficult to predict, we correlate their occurrences to space weather phenomena, and specifically show correlations between SEUs and solar proton events (SPEs). SPEs are highly energetic protons that originate from solar coronal mass ejections (CMEs). It is thought that when these particles impact geostationary (GEO) satellites they can cause SEUs as well as solar array degradation. We calculate the associated statistical correlations that each SEU occurs within one day, one week, two weeks, and one month of 10 MeV SPEs between 10 - 10,000 particle flux units (pfu). However, we find that SPEs are most prevalent at solar maximum and that the SEUs on Inmarsat's satellites occur out of phase with the solar maximum. Ultimately, this suggests that SPEs are not the primary cause of the Inmarsat SEUs. A better understanding of the causal relationship between SPEs and SEUs will help the satellite communications industry develop component and operational space weather mitigation techniques as well as help the space weather community to refine radiation models.

  9. ELECTROMECHANICAL TRANSIENT PROCESSES DURING SUPPLY VOLTAGE CHANGING IN THE SYSTEM OF POLYMER INSULATION COVERING OF THE CURRENT-CARRYING CORE OF ULTRA HIGH VOLTAGE CABLES

    V. M. Zolotaryov

    2018-04-01

    Full Text Available Aim. The article is devoted to the analysis of the electromechanical transient processes in a system of three frequency-controlled electric drives based on asynchronous motors that control current-carrying core motion, as well as to the study of the effect of such processes on the modes applying three-layer polymer insulation to the current-carrying core. Technique. The study was conducted based on the concepts of electromechanics, electromagnetic field theory, mathematical physics, mathematical modeling. Results. A mathematical model has been developed to analyze transients in an electromechanical system consisting of three frequency-controlled electric drives providing current-carrying core motion of ultra-high voltage cables in an inclined extrusion line. The coordination of the electromechanical parameters of the system drives has been carried out and the permissible changes in the supply voltage at the limiting mass while moving current-carrying core of ultra-high voltage cables with applied polymer insulation have been estimated. Scientific novelty. For the first time it is determined that with the limiting mass of the current-carrying core, the electromechanical system allows to stabilize the current-carrying core speed with the required accuracy at short-term decreases in the supply voltage by no more than 27 % of its amplitude value. It is also shown that this system is resistant to short-term increases in voltage by 32 % for 0.2 s. Practical significance. Using the developed model, it is possible to calculate the change in the configuration and speed of the slack current-carrying core when applying polymer insulation, depending on the specific mass of the current-carrying core per unit length, its tension at the bottom, the torque of the traction motor and the supply voltage to achieve stable operation of the system and accurate working of the set parameters.

  10. Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for Single-Event Gate Rapture and Single-Event Burnout : NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

    Scheick, Leif

    2011-01-01

    Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. TheSCF9550 from Semicoa and the IRHM57260SE from International Rectifier were tested to NASA test condition/standards and requirements.The IRHM57260SE performed much better when compared to previous testing. These initial results confirm that parts from the Temecula line are marginally comparable to the El Segundo line. The SCF9550 from Semicoa was also tested and represents the initial parts offering from this vendor. Both parts experienced single-event gate rupture (SEGR) and single-event burnout (SEB). All of the SEGR was from gate to drain.

  11. Investigation of HZETRN 2010 as a Tool for Single Event Effect Qualification of Avionics Systems

    Rojdev, Kristina; Koontz, Steve; Atwell, William; Boeder, Paul

    2014-01-01

    NASA's future missions are focused on long-duration deep space missions for human exploration which offers no options for a quick emergency return to Earth. The combination of long mission duration with no quick emergency return option leads to unprecedented spacecraft system safety and reliability requirements. It is important that spacecraft avionics systems for human deep space missions are not susceptible to Single Event Effect (SEE) failures caused by space radiation (primarily the continuous galactic cosmic ray background and the occasional solar particle event) interactions with electronic components and systems. SEE effects are typically managed during the design, development, and test (DD&T) phase of spacecraft development by using heritage hardware (if possible) and through extensive component level testing, followed by system level failure analysis tasks that are both time consuming and costly. The ultimate product of the SEE DD&T program is a prediction of spacecraft avionics reliability in the flight environment produced using various nuclear reaction and transport codes in combination with the component and subsystem level radiation test data. Previous work by Koontz, et al.1 utilized FLUKA, a Monte Carlo nuclear reaction and transport code, to calculate SEE and single event upset (SEU) rates. This code was then validated against in-flight data for a variety of spacecraft and space flight environments. However, FLUKA has a long run-time (on the order of days). CREME962, an easy to use deterministic code offering short run times, was also compared with FLUKA predictions and in-flight data. CREME96, though fast and easy to use, has not been updated in several years and underestimates secondary particle shower effects in spacecraft structural shielding mass. Thus, this paper will investigate the use of HZETRN 20103, a fast and easy to use deterministic transport code, similar to CREME96, that was developed at NASA Langley Research Center primarily for

  12. Modeling of HVDC System to Improve Estimation of Transient DC Current and Voltages for AC Line-to-Ground Fault—An Actual Case Study in Korea

    Dohoon Kwon

    2017-10-01

    Full Text Available A new modeling method for high voltage direct current (HVDC systems and associated controllers is presented for the power system simulator for engineering (PSS/E simulation environment. The aim is to improve the estimation of the transient DC voltage and current in the event of an AC line-to-ground fault. The proposed method consists primary of three interconnected modules for (a equation conversion; (b control-mode selection; and (c DC-line modeling. Simulation case studies were carried out using PSS/E and a power systems computer aided design/electromagnetic transients including DC (PSCAD/EMTDC model of the Jeju– Haenam HVDC system in Korea. The simulation results are compared with actual operational data and the PSCAD/EMTDC simulation results for an HVDC system during single-phase and three-phase line-to-ground faults, respectively. These comparisons show that the proposed PSS/E modeling method results in the improved estimation of the dynamic variation in the DC voltage and current in the event of an AC network fault, with significant gains in computational efficiency, making it suitable for real-time analysis of HVDC systems.

  13. Application of high energy accelerator to study of single event burn-out (SEB)

    Hada, Takashi; Aoki, Shiro; Nakamura, Masao; Matsuda, Sumio [National Space Development Agency of Japan, Tokyo (Japan); Hirao, Toshio; Nashiyama, Isamu; Hirose, Takayuki; Ohira, Hideharu; Nagai, Yuki

    1996-12-01

    Hitherto, as nuclear fission fragments of 252-Cf, one of radioactive matters have been used for elucidation of single event mechanism, this method has a limit for analysis of power MOSFET with long charge collection region (generally, empty layer) and is difficult to form the experiment simulating the space environment, because of their wide LET (Linear Energy Transfer) range and of short flying distance of about 15 micrometer. As a result, some irradiation experiments using an accelerator capable of forming charged particle beam with long flying distance and single energy became essential to elucidate the SEB mechanism. In this paper, an experiment result of SEB phenomenon using high energy accelerator was reported. As a result, following items were found: (1) With increase of impressed charge, collected charge shows two peaks, and also increases, (2) commercial power MOSFET shows about 280 V in SEB resistance, and power MOSFET developed for the space use shows about 320 V, which is improved about 40 V for the commercial one, and so forth. (G.K.)

  14. Single-event burnout hardening of planar power MOSFET with partially widened trench source

    Lu, Jiang; Liu, Hainan; Cai, Xiaowu; Luo, Jiajun; Li, Bo; Li, Binhong; Wang, Lixin; Han, Zhengsheng

    2018-03-01

    We present a single-event burnout (SEB) hardened planar power MOSFET with partially widened trench sources by three-dimensional (3D) numerical simulation. The advantage of the proposed structure is that the work of the parasitic bipolar transistor inherited in the power MOSFET is suppressed effectively due to the elimination of the most sensitive region (P-well region below the N+ source). The simulation result shows that the proposed structure can enhance the SEB survivability significantly. The critical value of linear energy transfer (LET), which indicates the maximum deposited energy on the device without SEB behavior, increases from 0.06 to 0.7 pC/μm. The SEB threshold voltage increases to 120 V, which is 80% of the rated breakdown voltage. Meanwhile, the main parameter characteristics of the proposed structure remain similar with those of the conventional planar structure. Therefore, this structure offers a potential optimization path to planar power MOSFET with high SEB survivability for space and atmospheric applications. Project supported by the National Natural Science Foundation of China (Nos. 61404161, 61404068, 61404169).

  15. 3D Thermal and Mechanical Analysis of a Single Event Burnout

    Peretti, Gabriela; Demarco, Gustavo; Romero, Eduardo; Tais, Carlos

    2015-08-01

    This paper presents a study related to thermal and mechanical behavior of power DMOS transistors during a Single Event Burnout (SEB) process. We use a cylindrical heat generation region for emulating the thermal and mechanical phenomena related to the SEB. In this way, it is avoided the complexity of the mathematical treatment of the ion-device interaction. This work considers locating the heat generation region in positions that are more realistic than the ones used in previous work. For performing the study, we formulate and validate a new 3D model for the transistor that maintains the computational cost at reasonable level. The resulting mathematical models are solved by means of the Finite Element Method. The simulations results show that the failure dynamics is dominated by the mechanical stress in the metal layer. Additionally, the time to failure depends on the heat source position, for a given power and dimension of the generation region. The results suggest that 3D modeling should be considered for a detailed study of thermal and mechanical effects induced by SEBs.

  16. Applications Of Monte Carlo Radiation Transport Simulation Techniques For Predicting Single Event Effects In Microelectronics

    Warren, Kevin; Reed, Robert; Weller, Robert; Mendenhall, Marcus; Sierawski, Brian; Schrimpf, Ronald

    2011-01-01

    MRED (Monte Carlo Radiative Energy Deposition) is Vanderbilt University's Geant4 application for simulating radiation events in semiconductors. Geant4 is comprised of the best available computational physics models for the transport of radiation through matter. In addition to basic radiation transport physics contained in the Geant4 core, MRED has the capability to track energy loss in tetrahedral geometric objects, includes a cross section biasing and track weighting technique for variance reduction, and additional features relevant to semiconductor device applications. The crucial element of predicting Single Event Upset (SEU) parameters using radiation transport software is the creation of a dosimetry model that accurately approximates the net collected charge at transistor contacts as a function of deposited energy. The dosimetry technique described here is the multiple sensitive volume (MSV) model. It is shown to be a reasonable approximation of the charge collection process and its parameters can be calibrated to experimental measurements of SEU cross sections. The MSV model, within the framework of MRED, is examined for heavy ion and high-energy proton SEU measurements of a static random access memory.

  17. Incorporation of aurochs into a cattle herd in Neolithic Europe: single event or breeding?

    Schibler, Jörg; Elsner, Julia; Schlumbaum, Angela

    2014-07-01

    Domestication is an ongoing process continuously changing the lives of animals and humans and the environment. For the majority of European cattle (Bos taurus) genetic and archaeozoological evidence support initial domestication ca. 11'000 BP in the Near East from few founder aurochs (Bos primigenius) belonging to the mitochondrial DNA T macro-haplogroup. Gene flow between wild European aurochs of P haplogroup and domestic cattle of T haplogroup, coexisting over thousands of years, appears to have been sporadic. We report archaeozoological and ancient DNA evidence for the incorporation of wild stock into a domestic cattle herd from a Neolithic lake-dwelling in Switzerland. A complete metacarpus of a small and compact adult bovid is morphologically and genetically a female. With withers height of ca. 112 cm, it is comparable in size with small domestic cattle from contemporaneous sites in the area. The bone is directly dated to 3360-3090 cal BC and associated to the Horgen culture, a period of the secondary products revolution. The cow possessed a novel mtDNA P haplotype variant of the European aurochs. We argue this is either a single event or, based on osteological characteristics of the Horgen cattle, a rare instance of intentional breeding with female aurochs.

  18. Radiation induced Single Event Effects in the ATLAS MDT-ASD front-end chip

    Posch, C

    2002-01-01

    Single Event Effect (SEE) tests of the MDT-ASD, the ATLAS MDT front-end chip have been performed at the Harvard Cyclotron Lab. The MDT-ASD is an 8-channel drift tube read-out ASIC fabricated in a commercial 0.5um CMOS process (AMOS14TB). The chip contains a 53 bit register which holds the setup information and an associated shift register of the same length plus some additional control logic. 10 test devices were exposed to a 160 MeV proton beam with a fluence of 1.05E9 p.cm-2.s-1 up to >4.4E p.cm-2 per device. After a total fluence of 4.46E13 p.cm-2, 7 soft SEEs (non-permanent bit flips in the registers) and 0 hard/destructive SEE (e.g. latch-ups, SEL) had occurred. The simulated fluence for 10 years of LHC operation at nominal luminosity for worst case location MDT components is 2.67E11 h.cm-2. The rate of SEUs in the ASD setup register for all of ATLAS, derived from these numbers, is 2.4 per day. It is foreseen to update the active registers of the on-detector electronics at regular intervals. Depending on...

  19. Impact of temperature on single event upset measurement by heavy ions in SRAM devices

    Liu Tianqi; Geng Chao; Zhang Zhangang; Gu Song; Tong Teng; Xi Kai; Hou Mingdong; Liu Jie; Zhao Fazhan; Liu Gang; Han Zhengsheng

    2014-01-01

    The temperature dependence of single event upset (SEU) measurement both in commercial bulk and silicon on insulator (SOI) static random access memories (SRAMs) has been investigated by experiment in the Heavy Ion Research Facility in Lanzhou (HIRFL). For commercial bulk SRAM, the SEU cross section measured by 12 C ions is very sensitive to the temperature. The temperature test of SEU in SOI SRAM was conducted by 209 Bi and 12 C ions, respectively, and the SEU cross sections display a remarkable growth with the elevated temperature for 12 C ions but keep constant for 209 Bi ions. The impact of temperature on SEU measurement was analyzed by Monte Carlo simulation. It is revealed that the SEU cross section is significantly affected by the temperature around the threshold linear energy transfer of SEU occurrence. As the SEU occurrence approaches saturation, the SEU cross section gradually exhibits less temperature dependency. Based on this result, the experimental data measured in HIRFL was analyzed, and then a reasonable method of predicting the on-orbit SEU rate was proposed. (semiconductor devices)

  20. Analytical Analysis and Case Study of Transient Behavior of Inrush Current in Power Transformer for Designing of Efficient Circuit Breakers

    Harmanpreet, Singh, Sukhwinder; Kumar, Ashok; Kaur, Parneet

    2010-11-01

    Stability & security are main aspects in electrical power systems. Transformer protection is major issue of concern to system operation. There are many mall-trip cases of transformer protection are caused by inrush current problems. The phenomenon of transformer inrush current has been discussed in many papers since 1958. In this paper analytical analysis of inrush current in a transformer switched on dc and ac supply has been done. This analysis will help in design aspects of circuit breakers for better performance.

  1. Single event upset mitigation techniques for FPGAs utilized in nuclear power plant digital instrumentation and control

    Wang Xin; Holbert, Keith E.; Clark, Lawrence T.

    2011-01-01

    Highlights: → Triple modular redundancy (TMR) implementation is the best solution for digital I and C. → Maximal probability of two simultaneous errors with TMR maximum partition is 4.44%. → Dual modular redundancy minimum logic partitioning design is an additional option. - Abstract: Field programmable gate arrays (FPGAs) are integrated circuits being increasingly used for digital instrumentation and control (I and C) in nuclear power plants (NPPs) because of low cost, re-configurability and low design turn-around time. However, to ensure reliability, proper design techniques must be employed since the memory and logic in FPGAs are susceptible to single event upsets (SEUs). Triple modular redundancy (TMR) has become a common SEU mitigation design technique because of its straightforward implementation and reliable results. Partitioned TMR approaches are introduced in this paper, and formulae derived indicate that the maximum probability of two simultaneous errors [P E ] max is inversely proportional to the number of logic partitions in a TMR design, when each redundant logic block in every logic partition has the same number of sensitive nodes. However, the maximum logic partitioning design cannot completely eliminate the possibility of two simultaneous upsets. For the example test circuit it is found that [P E ] max is reduced dramatically from 66.67% for minimum logic partitioning to 4.44% for maximum logic partitioning. Because TMR introduces significant overhead due to its full hardware redundancy, a dual modular redundancy approach is also examined for application to less demanding situations. By comparative analysis this study reaches the conclusion that the maximum logic partitioning TMR implementation is the best solution for digital I and C applications in NPPs where obtaining robustness is of the highest importance, despite its higher area overhead.

  2. Swift heavy ion induced single event upsets in high density UV-EPROM's

    Dahiwale, S.S. [Department of Physics, University of Pune, Pune 7 (India); Shinde, N.S. [Department of Chemical Engineering, Mie University (Japan); Kanjilal, D. [Inter University Accelerator Center, New Delhi (India); Bhoraskar, V.N. [Department of Physics, University of Pune, Pune 7 (India); Dhole, S.D. [Department of Physics, University of Pune, Pune 7 (India)], E-mail: sanjay@physics.unipune.ernet.in

    2008-04-15

    A few high density UV-EPROM's (32Kb x 8) were irradiated with 5.41 MeV energy {alpha}-particles with fluences from 10{sup 4} to 10{sup 8} alphas/cm{sup 2} and 100 MeV nickel, iodine and silver ions for low fluences between 5 x 10{sup 7} and 10{sup 8} ions/cm{sup 2}. The energy and ion species was selected on the basis of predicted threshold values of linear energy transfer (LET) in silicon. The program which was stored in the memory found to be changed from 0 to 1 and 1 to 0 state, respectively. On the basis of changed states, the cross-sections ({sigma}) were calculated to investigate the single event effects/upsets. No upset was observed in case of {alpha}-particle since it has very low LET, but the SEU cross-section found to be more in case of Iodine i.e. 2.29 x 10{sup -3} cm{sup 2} than that of nickel, 2.12 x 10{sup -3} cm{sup 2} and silver, 2.26 x 10{sup -3}. This mainly attributes that LET for iodine is more as compared to silver and nickel ions, which deposits large amount of energy near the sensitive node of memory cell in the form of electron-hole pairs required to change the state. These measured SEU cross-section were also compared with theoretically predicted values along with the Weibull distribution fit to the ion induced experimental SEU data. The theoretical predicted SEU cross-section 3.27 x 10{sup -3} cm{sup 2} found to be in good agreement with the measured SEU cross-section.

  3. Single Event Resolution of Plant Plasma Membrane Protein Endocytosis by TIRF Microscopy.

    Johnson, Alexander; Vert, Grégory

    2017-01-01

    Endocytosis is a key process in the internalization of extracellular materials and plasma membrane proteins, such as receptors and transporters, thereby controlling many aspects of cell signaling and cellular homeostasis. Endocytosis in plants has an essential role not only for basic cellular functions but also for growth and development, nutrient delivery, toxin avoidance, and pathogen defense. The precise mechanisms of endocytosis in plants remain quite elusive. The lack of direct visualization and examination of single events of endocytosis has greatly hampered our ability to precisely monitor the cell surface lifetime and the recruitment profile of proteins driving endocytosis or endocytosed cargos in plants. Here, we discuss the necessity to systematically implement total internal reflection fluorescence microcopy (TIRF) in the Plant Cell Biology community and present reliable protocols for high spatial and temporal imaging of endocytosis in plants using clathrin-mediated endocytosis as a test case, since it represents the major route for internalization of cell-surface proteins in plants. We developed a robust method to directly visualize cell surface proteins using TIRF microscopy combined to a high throughput, automated and unbiased analysis pipeline to determine the temporal recruitment profile of proteins to single sites of endocytosis, using the departure of clathrin as a physiological reference for scission. Using this 'departure assay', we assessed the recruitment of two different AP-2 subunits, alpha and mu, to the sites of endocytosis and found that AP2A1 was recruited in concert with clathrin, while AP2M was not. This validated approach therefore offers a powerful solution to better characterize the plant endocytic machinery and the dynamics of one's favorite cargo protein.

  4. Development of Single-Event Upset hardened programmable logic devices in deep submicron CMOS

    Bonacini, S.

    2007-11-01

    The electronics associated to the particle detectors of the Large Hadron Collider (LHC), under construction at CERN, will operate in a very harsh radiation environment. Commercial Off-The-Shelf (COTS) components cannot be used in the vicinity of particle collision due to their poor radiation tolerance. This thesis is a contribution to the effort to cover the need for radiation-tolerant SEU-robust (Single Event Upset) programmable components for application in high energy physics experiments. Two components are under development: a Programmable Logic Device (PLD) and a Field-Programmable Gate Array (FPGA). The PLD is a fuse-based, 10-input, 8-I/O general architecture device in 0.25 μm CMOS technology. The FPGA under development is a 32*32 logic block array, equivalent to ∼ 25 k gates, in 0.13 μm CMOS. The irradiation test results obtained in the CMOS 0.25 μm technology demonstrate good robustness of the circuit up to an LET (Linear Energy Transfer) of 79.6 cm 2 *MeV/mg, which make it suitable for the target environment. The CMOS 0.13 μm circuit has showed robustness to an LET of 37.4 cm 2 *MeV/mg in the static test mode and has increased sensitivity in the dynamic test mode. This work focused also on the research for an SEU-robust register in both the mentioned technologies. The SEU-robust register is employed as a user data flip-flop in the FPGA and PLD designs and as a configuration cell as well in the FPGA design

  5. Application of RADSAFE to Model Single Event Upset Response of a 0.25 micron CMOS SRAM

    Warren, Kevin M.; Weller, Robert A.; Sierawski, Brian; Reed, Robert A.; Mendenhall, Marcus H.; Schrimpf, Ronald D.; Massengill, Lloyd; Porter, Mark; Wilkerson, Jeff; LaBel, Kenneth A.; hide

    2006-01-01

    The RADSAFE simulation framework is described and applied to model Single Event Upsets (SEU) in a 0.25 micron CMOS 4Mbit Static Random Access Memory (SRAM). For this circuit, the RADSAFE approach produces trends similar to those expected from classical models, but more closely represents the physical mechanisms responsible for SEU in the SRAM circuit.

  6. Transient, Small-Scale Field-Aligned Currents in the Plasma Sheet Boundary Layer During Storm Time Substorms

    Nakamura, R.; Sergeev, V. A.; Baumjohann, W.; Plaschke, F.; Magnes, W.; Fischer, D.; Varsani, A.; Schmid, D.; Nakamura, T. K. M.; Russell, C. T.; hide

    2016-01-01

    We report on field-aligned current observations by the four Magnetospheric Multiscale (MMS) spacecraft near the plasma sheet boundary layer (PSBL) during two major substorms on 23 June 2015. Small-scale field-aligned currents were found embedded in fluctuating PSBL flux tubes near the Separatrix region. We resolve, for the first time, short-lived earthward (downward) intense field-aligned current sheets with thicknesses of a few tens of kilometers, which are well below the ion scale, on flux tubes moving equatorward earth ward during outward plasma sheet expansion. They coincide with upward field-aligned electron beams with energies of a few hundred eV. These electrons are most likely due to acceleration associated with a reconnection jet or high-energy ion beam-produced disturbances. The observations highlight coupling of multiscale processes in PSBL as a consequence of magnetotail reconnection.

  7. Proceedings of the CSNI Specialist Meeting on Transient Two-Phase Flow - Current Issues in System Thermal Hydraulics

    Reocreux, M; Rubinstein, M C [CEA-IPSN/DRS/SEMAR, Centre d' Etudes Nucleaires de Cadarache, 13108 Saint Paul-lez-Durance (France)

    1992-07-01

    The 4. Specialists' Meeting on Transient Two Phase Flow was organized by the Safety Research Department of the French Nuclear Safety and Protection Institute at the request of the OECD Committee for the Safety of Nuclear Installations. After Toronto in 1976, Paris in 1978 and Pasadena in 1981, the Aix-en-Provence meeting was in keeping with the course of studies initiated by the Thermalhydraulic Systems Behavior Task Group of the Principal Working Group No.2 for discussing the achievements and defining the needs of safety research in accident thermal-hydraulics. 60 Specialists from 14 Countries (Belgium, Canada, Finland, France, Germany, Italy, Japan, the Netherlands, the United Kingdom, the USA, Spain, Sweden, Switzerland, Taiwan) attended the meeting, representing a large spectrum of experts from National Safety Authorities, Research Laboratories, Universities, Vendors and Utilities. These specialists had to review the 15-year research period which had elapsed since the last meetings. This period had been characterized by the issuance of the large thermalhydraulic computer codes for LWR accidents, the performance of several hundreds of separate effect tests for the development and the qualification of the physical models, the carrying-out of the large experimental programmes on system loops (up to scale 1) for verifying the computer codes. Although this research was mainly characterized by remarkable success, limitations still exist. In a safety approach, there need to be well identified and handled, and the specialists were asked to exchange their views in order to determine which solutions they expected to be affordable in the future. Safety applications have already started which use these latest research achievements. They raise specific problems such as the use of validation matrices, the evaluation of uncertainties, the identification and the control of unavoidable users' effects. The specialists were required to exchange their experience of applications

  8. Proceedings of the CSNI Specialist Meeting on Transient Two-Phase Flow - Current Issues in System Thermal Hydraulics

    Reocreux, M.; Rubinstein, M.C.

    1992-01-01

    The 4. Specialists' Meeting on Transient Two Phase Flow was organized by the Safety Research Department of the French Nuclear Safety and Protection Institute at the request of the OECD Committee for the Safety of Nuclear Installations. After Toronto in 1976, Paris in 1978 and Pasadena in 1981, the Aix-en-Provence meeting was in keeping with the course of studies initiated by the Thermalhydraulic Systems Behavior Task Group of the Principal Working Group No.2 for discussing the achievements and defining the needs of safety research in accident thermal-hydraulics. 60 Specialists from 14 Countries (Belgium, Canada, Finland, France, Germany, Italy, Japan, the Netherlands, the United Kingdom, the USA, Spain, Sweden, Switzerland, Taiwan) attended the meeting, representing a large spectrum of experts from National Safety Authorities, Research Laboratories, Universities, Vendors and Utilities. These specialists had to review the 15-year research period which had elapsed since the last meetings. This period had been characterized by the issuance of the large thermalhydraulic computer codes for LWR accidents, the performance of several hundreds of separate effect tests for the development and the qualification of the physical models, the carrying-out of the large experimental programmes on system loops (up to scale 1) for verifying the computer codes. Although this research was mainly characterized by remarkable success, limitations still exist. In a safety approach, there need to be well identified and handled, and the specialists were asked to exchange their views in order to determine which solutions they expected to be affordable in the future. Safety applications have already started which use these latest research achievements. They raise specific problems such as the use of validation matrices, the evaluation of uncertainties, the identification and the control of unavoidable users' effects. The specialists were required to exchange their experience of applications

  9. Radiation-Induced Transient Effects in Near Infrared Focal Plane Arrays

    Reed, Robert A.; Pickel, J.; Marshall, P.; Waczynski, A.; McMurray, R.; Gee, G.; Polidan, E.; Johnson, S.; McKeivey, M.; Ennico, K.; hide

    2004-01-01

    This viewgraph presentation describes a test simulate the transient effects of cosmic ray impacts on near infrared focal plane arrays. The objectives of the test are to: 1) Characterize proton single events as function of energy and angle of incidence; 2) Measure charge spread (crosstalk) to adjacent pixels; 3) Assess transient recovery time.

  10. Biphasic response of action potential duration to metabolic inhibition in rabbit and human ventricular myocytes: role of transient outward current and ATP-regulated potassium current

    Verkerk, A. O.; Veldkamp, M. W.; van Ginneken, A. C.; Bouman, L. N.

    1996-01-01

    Inhibition of cell metabolism is associated with significant changes in action potential duration. The aim of this study was to investigate the time course of the changes in action potential duration during metabolic inhibition and to determine what changes in membrane currents are responsible. The

  11. Single-event multilevel surgery for children with cerebral palsy: a systematic review.

    McGinley, Jennifer L; Dobson, Fiona; Ganeshalingam, Rekha; Shore, Benjamin J; Rutz, Erich; Graham, H Kerr

    2012-02-01

    To conduct a systematic review of single-event multilevel surgery (SEMLS) for children with cerebral palsy, with the aim of evaluating the quality of the evidence and developing recommendations for future research. The systematic review was conducted using standard search and extraction methods in Medline, EMBASE, CINAHL, and Cochrane electronic databases. For the purposes of this review, SEMLS was defined as two or more soft-tissue or bony surgical procedures at two or more anatomical levels during one operative procedure, requiring only one hospital admission and one period of rehabilitation. Studies were included if: (1) the primary focus was to examine the effect of SEMLS in children with cerebral palsy; (2) the results focused on multiple anatomic levels and reported findings of one or more World Health Organization International Classification of Functioning, Disability and Health (ICF) domains. Studies that focused on a single intervention or level, or on the utility of a specific outcome measure were excluded. Study quality was appraised with the Methodological Index for Non-Randomized Studies (MINORS) and the Oxford Centre for Evidence-Based Medicine scale. The review also examined the reporting of surgery, adverse events, and rehabilitation. Thirty-one studies fulfilled the criteria for inclusion, over the period 1985 to October 2010. The MINORS score for these studies varied from 4 to 19, with marked variation in the quality of reporting. Study quality has improved over recent years. Valid measures of gait and function have been introduced and several of the most recent studies have addressed multiple dimensions of the ICF. A statistical synthesis of the outcome data was not conducted, although a trend towards favourable outcomes in gait was evident. Caution is advised with interpretation owing to the variable study quality. Uncontrolled studies may have resulted in an overestimation of treatment efficacy. The design and reporting of studies of SEMLS are

  12. Motor current signature analysis for gearbox condition monitoring under transient speeds using wavelet analysis and dual-level time synchronous averaging

    Bravo-Imaz, Inaki; Davari Ardakani, Hossein; Liu, Zongchang; García-Arribas, Alfredo; Arnaiz, Aitor; Lee, Jay

    2017-09-01

    This paper focuses on analyzing motor current signature for fault diagnosis of gearboxes operating under transient speed regimes. Two different strategies are evaluated, extensively tested and compared to analyze the motor current signature in order to implement a condition monitoring system for gearboxes in industrial machinery. A specially designed test bench is used, thoroughly monitored to fully characterize the experiments, in which gears in different health status are tested. The measured signals are analyzed using discrete wavelet decomposition, in different decomposition levels using a range of mother wavelets. Moreover, a dual-level time synchronous averaging analysis is performed on the same signal to compare the performance of the two methods. From both analyses, the relevant features of the signals are extracted and cataloged using a self-organizing map, which allows for an easy detection and classification of the diverse health states of the gears. The results demonstrate the effectiveness of both methods for diagnosing gearbox faults. A slightly better performance was observed for dual-level time synchronous averaging method. Based on the obtained results, the proposed methods can used as effective and reliable condition monitoring procedures for gearbox condition monitoring using only motor current signature.

  13. Transcranial direct current stimulation generates a transient increase of small-world in brain connectivity: an EEG graph theoretical analysis.

    Vecchio, Fabrizio; Di Iorio, Riccardo; Miraglia, Francesca; Granata, Giuseppe; Romanello, Roberto; Bramanti, Placido; Rossini, Paolo Maria

    2018-04-01

    Transcranial direct current stimulation (tDCS) is a non-invasive technique able to modulate cortical excitability in a polarity-dependent way. At present, only few studies investigated the effects of tDCS on the modulation of functional connectivity between remote cortical areas. The aim of this study was to investigate-through graph theory analysis-how bipolar tDCS modulate cortical networks high-density EEG recordings were acquired before and after bipolar cathodal, anodal and sham tDCS involving the primary motor and pre-motor cortices of the dominant hemispherein 14 healthy subjects. Results showed that, after bipolar anodal tDCS stimulation, brain networks presented a less evident "small world" organization with a global tendency to be more random in its functional connections with respect to prestimulus condition in both hemispheres. Results suggest that tDCS globally modulates the cortical connectivity of the brain, modifying the underlying functional organization of the stimulated networks, which might be related to changes in synaptic efficiency of the motor network and related brain areas. This study demonstrated that graph analysis approach to EEG recordings is able to intercept changes in cortical functions mediated by bipolar anodal tDCS mainly involving the dominant M1 and related motor areas. Concluding, tDCS could be an useful technique to help understanding brain rhythms and their topographic functional organization and specificity.

  14. NASA Electronic Parts and Packaging (NEPP) Field Programmable Gate Array (FPGA) Single Event Effects (SEE) Test Guideline Update

    Berg, Melanie D.; LaBel, Kenneth A.

    2018-01-01

    The following are updated or new subjects added to the FPGA SEE Test Guidelines manual: academic versus mission specific device evaluation, single event latch-up (SEL) test and analysis, SEE response visibility enhancement during radiation testing, mitigation evaluation (embedded and user-implemented), unreliable design and its affects to SEE Data, testing flushable architectures versus non-flushable architectures, intellectual property core (IP Core) test and evaluation (addresses embedded and user-inserted), heavy-ion energy and linear energy transfer (LET) selection, proton versus heavy-ion testing, fault injection, mean fluence to failure analysis, and mission specific system-level single event upset (SEU) response prediction. Most sections within the guidelines manual provide information regarding best practices for test structure and test system development. The scope of this manual addresses academic versus mission specific device evaluation and visibility enhancement in IP Core testing.

  15. Single Event Upset Rate Estimates for a 16-K CMOS (Complementary Metal Oxide Semiconductor) SRAM (Static Random Access Memory).

    1986-09-30

    4 . ~**..ft.. ft . - - - ft SI TABLES 9 I. SA32~40 Single Event Upset Test, 1140-MeV Krypton, 9/l8/8~4. . .. .. .. .. .. .16 II. CRUP Simulation...cosmic ray interaction analysis described in the remainder of this report were calculated using the CRUP computer code 3 modified for funneling. The... CRUP code requires, as inputs, the size of a depletion region specified as a retangular parallel piped with dimensions a 9 b S c, the effective funnel

  16. Temperature control system for the study of single event effects in integrated circuits using a cyclotron accelerator

    Bakerenkov, A.S., E-mail: as_bakerenkov@list.ru [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation); Belyakov, V.V. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation); Kozyukov, A.E. [Joint-Stock Company Institute of Space Device Engineering (JSC ISDE), Moscow (Russian Federation); Pershenkov, V.S.; Solomatin, A.V.; Shurenkov, V.V. [National Research Nuclear University MEPhI (Moscow Engineering Physics Institute), Moscow (Russian Federation)

    2015-02-11

    The temperature control system for the study of single event disruptions produced by hard ion impacts in integrated circuits is described. Heating and cooling of the irradiated device are achieved using thermoelectric modules (Peltier modules). The thermodynamic performance of the system is estimated. The technique for the numerical estimation of the main parameters of the temperature control system for cooling and heating is considered. The results of a test of the system in a vacuum cell of an accelerator are presented.

  17. Temperature control system for the study of single event effects in integrated circuits using a cyclotron accelerator

    Bakerenkov, A.S.; Belyakov, V.V.; Kozyukov, A.E.; Pershenkov, V.S.; Solomatin, A.V.; Shurenkov, V.V.

    2015-01-01

    The temperature control system for the study of single event disruptions produced by hard ion impacts in integrated circuits is described. Heating and cooling of the irradiated device are achieved using thermoelectric modules (Peltier modules). The thermodynamic performance of the system is estimated. The technique for the numerical estimation of the main parameters of the temperature control system for cooling and heating is considered. The results of a test of the system in a vacuum cell of an accelerator are presented

  18. Defect States in InP/InGaAs/InP Heterostructures by Current-Voltage Characteristics and Deep Level Transient Spectroscopy.

    Vu, Thi Kim Oanh; Lee, Kyoung Su; Lee, Sang Jun; Kim, Eun Kyu

    2018-09-01

    We studied defect states in In0.53Ga0.47As/InP heterojunctions with interface control by group V atoms during metalorganic chemical vapor (MOCVD) deposition. From deep level transient spectroscopy (DLTS) measurements, two defects with activation energies of 0.28 eV (E1) and 0.15 eV (E2) below the conduction band edge, were observed. The defect density of E1 for In0.53Ga0.47As/InP heterojunctions with an addition of As and P atoms was about 1.5 times higher than that of the heterojunction added P atom only. From the temperature dependence of current- voltage characteristics, the thermal activation energies of In0.53Ga0.47As/InP of heterojunctions were estimated to be 0.27 and 0.25 eV, respectively. It appeared that the reverse light current for In0.53Ga0.47As/InP heterojunction added P atom increased only by illumination of a 940 nm-LED light source. These results imply that only the P addition at the interface can enhance the quality of InGaAs/InP heterojunction.

  19. The Influence of Age at Single-Event Multilevel Surgery on Outcome in Children with Cerebral Palsy Who Walk with Flexed Knee Gait

    Svehlik, Martin; Steinwender, Gerhard; Kraus, Tanja; Saraph, Vinay; Lehmann, Thomas; Linhart, Wolfgang E.; Zwick, Ernst B.

    2011-01-01

    Aim: Information on the timing and long-term outcome of single-event multilevel surgery in children with bilateral spastic cerebral palsy (CP) walking with flexed knee gait is limited. Based on our clinical experience, we hypothesized that older children with bilateral spastic CP would benefit more from single-event multilevel surgery than younger…

  20. Features of the triggering mehanism for single event burnout of power MOSFES

    Hohl, J.H.; Johnson, G.H.

    1989-01-01

    The feedback mechanism leading to second breakdown and burnout in a power MOSFET is reviewed briefly, and critical device design parameters are identified and chosen with regard to electrical specifications. Based on typical parameters, the avalanching conditions in the space charge region of the collector junction are investigated over a wide range of collector current densities. It is shown that the space charge associated with the collector current density modifies the electric field profile such that, with increasing collector current, the avalanche multiplication factor rises to a peak, then declines to a valley, and eventually rises monotonically. This behavior can be explained in simple terms. It may lead to a stable avalanching condition with a current density too low to damage the structure. This condition can be initiated by heavy ions with energies below a certain threshold. Ion energies beyond the threshold drive the avalanching process into the region of monotonic increase of the avalanche multiplication factor and lead to run-away and burnout. The threshold for runaway varies widely with changing configurations of the p + -plug and of the p-body region and promises configurations that are immune to burnout. Assessments of threshold currents in a typical hex cell are given

  1. Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

    Bronuzzi, J.; Moll, M.; Sallese, J.M.

    2016-01-01

    In the framework of monolithic silicon radiation detectors, a fabrication process based on a recently developed silicon wafer bonding technique at low temperature was proposed. Ideally, this new process would enable direct bonding of a read-out electronic chip wafer on a highly resistive silicon substrate wafer, which is expected to present many advantages since it would combine high performance IC's with high sensitive ultra-low doped bulk silicon detectors. But electrical properties of the bonded interface are critical for this kind of application since the mobile charges generated by radiation inside the bonded bulk are expected to transit through the interface in order to be collected by the read-out electronics. In this work, we propose to explore and develop a model for the so-called Transient Current Technique (TCT) to identify the presence of deep traps at the bonded interface. For this purpose, we consider a simple PIN diode reversely biased where the ultra-low doped active region of interest is set ...

  2. Principle and modelling of Transient Current Technique for interface traps characterization in monolithic pixel detectors obtained by CMOS-compatible wafer bonding

    Bronuzzi, J.; Mapelli, A.; Moll, M.; Sallese, J.M.

    2016-01-01

    In the framework of monolithic silicon radiation detectors, a fabrication process based on a recently developed silicon wafer bonding technique at low temperature was proposed. Ideally, this new process would enable direct bonding of a read-out electronic chip wafer on a highly resistive silicon substrate wafer, which is expected to present many advantages since it would combine high performance IC's with high sensitive ultra-low doped bulk silicon detectors. But electrical properties of the bonded interface are critical for this kind of application since the mobile charges generated by radiation inside the bonded bulk are expected to transit through the interface in order to be collected by the read-out electronics. In this work, we propose to explore and develop a model for the so-called Transient Current Technique (TCT) to identify the presence of deep traps at the bonded interface. For this purpose, we consider a simple PIN diode reversely biased where the ultra-low doped active region of interest is set in full depletion. In a first step, Synopsys Sentaurus TCAD is used to evaluate the soundness of this technique for interface traps characterization such as it may happen in bonded interfaces. Next, an analytical model is developed in details to give a better insight into the physics behind the TCT for interface layers. Further, this can be used as a simple tool to evidence what are the relevant parameters influencing the TCT signal and to set the basis for preliminary characterizations.

  3. Characterization of semi-insulating materials by photoinduced current transient spectroscopy: Fe doped INP for micro-optoelectronics and CdZnTe for nuclear detection

    Cherkaoui, K.

    1998-01-01

    The need of semi-insulating materials, of great quality, concerns various application domains. For instance, the very resistive substrates InP and CdZnTe are respectively adapted to the micro-optoelectronic circuits and to nuclear detectors. These two materials have been characterized by the thermal photoinduced current transient spectroscopy. The first part of this thesis is the defects analysis of annealing InP substrates, to understand the compensation process of this material. Two activation energy levels around 0,2 to 0,4 eV resulting from the thermal treatment have been detected. The iron omnipresence in the substrates, even undoped, has been noticed. It is then necessary to take into account the iron presence to understand the compensation process in these InP annealing substrates. the second part presents the study of the CdZnTe material, elaborated by the Bridgman method, to emphasize the defects leading to the decrease of the detector performances. The presence of three deep levels, near the forbidden band middle, is in relation with the detectors performances. (A.L.B.)

  4. An evaluation testing technique of single event effect using Beam Blanking SEM

    Aoki, J; Hada, T; Pesce, A; Akutsu, T; Matsuda, S [National Space Development Agency of Japan, Tsukuba, Ibaraki (Japan). Tsukuba Space Center; Igarashi, T; Baba, S

    1997-03-01

    Beam Blanking SEM (Scanning Electron Microscope) testing technique has been applied to CMOS SRAM devices to evaluate the occurence of soft errors on memory cells. Cross-section versus beam current and LET curves derived from BBSEM and heavy ion testing technique, respectively, have been compared. A linear relation between BBSEM current and heavy ion LET has been found. The purpose of this study was to demonstrate that the application of focused pulsed electron beam could be a reliable, convenient and inexpensive tool to investigate the effects of heavy ions and high energy particles on memory devices for space application. (author)

  5. Transient Outward K+ Current (Ito) Underlies the Right Ventricular Initiation of Polymorphic Ventricular Tachycardia in a Transgenic Rabbit Model of Long-QT Syndrome Type 1.

    Choi, Bum-Rak; Li, Weiyan; Terentyev, Dmitry; Kabakov, Anatoli Y; Zhong, Mingwang; Rees, Colin M; Terentyeva, Radmila; Kim, Tae Yun; Qu, Zhilin; Peng, Xuwen; Karma, Alain; Koren, Gideon

    2018-06-01

    Sudden death in long-QT syndrome type 1 (LQT1), an inherited disease caused by loss-of-function mutations in KCNQ1, is triggered by early afterdepolarizations (EADs) that initiate polymorphic ventricular tachycardia (pVT). We investigated ionic mechanisms that underlie pVT in LQT1 using a transgenic rabbit model of LQT1. Optical mapping, cellular patch clamping, and computer modeling were used to elucidate the mechanisms of EADs in transgenic LQT1 rabbits. The results showed that shorter action potential duration in the right ventricle (RV) was associated with focal activity during pVT initiation. RV cardiomyocytes demonstrated higher incidence of EADs under 50 nmol/L isoproterenol. Voltage-clamp studies revealed that the transient outward potassium current (I to ) magnitude was 28% greater in RV associated with KChiP2 but with no differences in terms of calcium-cycling kinetics and other sarcolemmal currents. Perfusing with the I to blocker 4-aminopyridine changed the initial focal sites of pVT from the RV to the left ventricle, corroborating the role of I to in pVT initiation. Computer modeling showed that EADs occur preferentially in the RV because of the larger conductance of the slow-inactivating component of I to , which repolarizes the membrane potential sufficiently rapidly to allow reactivation of I Ca,L before I Kr has had sufficient time to activate. I to heterogeneity creates both triggers and an arrhythmogenic substrate in LQT1. In the absence of I Ks , I to interactions with I Ca,L and I Kr promote EADs in the RV while prolonging action potential duration in the left ventricle. This heterogeneity of action potential enhances dispersion of refractoriness and facilitates conduction blocks that initiate pVTs. © 2018 American Heart Association, Inc.

  6. A template-free approach for determining the latency of single events of auditory evoked M100

    Burghoff, M [Physikalisch-Technische Bundesanstalt (PTB), Berlin (Germany); Link, A [Physikalisch-Technische Bundesanstalt (PTB), Berlin (Germany); Salajegheh, A [Cognitive Neuroscience of Language Laboratory, University of Maryland College Park, MD (United States); Elster, C [Physikalisch-Technische Bundesanstalt (PTB), Berlin (Germany); Poeppel, D [Cognitive Neuroscience of Language Laboratory, University of Maryland College Park, MD (United States); Trahms, L [Physikalisch-Technische Bundesanstalt (PTB), Berlin (Germany)

    2005-02-07

    The phase of the complex output of a narrow band Gaussian filter is taken to define the latency of the auditory evoked response M100 recorded by magnetoencephalography. It is demonstrated that this definition is consistent with the conventional peak latency. Moreover, it provides a tool for reducing the number of averages needed for a reliable estimation of the latency. Single-event latencies obtained by this procedure can be used to improve the signal quality of the conventional average by latency adjusted averaging. (note)

  7. Single-Event Upset and Scaling Trends in New Generation of the Commercial SOI PowerPC Microprocessors

    Irom, Farokh; Farmanesh, Farhad; Kouba, Coy K.

    2006-01-01

    Single-event upset effects from heavy ions are measured for Motorola silicon-on-insulator (SOI) microprocessor with 90 nm feature sizes. The results are compared with previous results for SOI microprocessors with feature sizes of 130 and 180 nm. The cross section of the 90 nm SOI processors is smaller than results for 130 and 180 nm counterparts, but the threshold is about the same. The scaling of the cross section with reduction of feature size and core voltage for SOI microprocessors is discussed.

  8. Nuclear data relevant to single event upsets in semiconductor memories induced by cosmic-ray neutrons and protons

    Watanabe, Yukinobu

    2008-01-01

    The role of nuclear data is examined in the study of single event upset (SEU) phenomena in semiconductor memories caused by cosmic-ray neutrons and protons. Neutron and proton SEU cross sections are calculated with a simplified semi-empirical model using experimental heavy-ion SEU cross-sections and a dedicated database of neutron and proton induced reactions on 28 Si. Some impacts of the nuclear reaction data on SEU simulation are analyzed by investigating relative contribution of secondary ions and neutron elastic scattering to SEU and influence of simultaneous multiple ions emission on SEU. (author)

  9. Two-dimensional numerical simulation of the effect of single event burnout for n-channel VDMOSFET

    Guo Hongxia; Chen Yusheng; Wang Wei; Zhao Jinlong; Zhang Yimen; Zhou Hui

    2004-01-01

    2D MEDICI simulator is used to investigate the effect of Single Event Burnout (SEB) for n-channel power VDMOSFETs. The simulation results are consistent with experimental results which have been published. The simulation results are of great interest for a better understanding of the occurrence of events. The effects of the minority carrier lifetime in the base region, the base width and the emitter doping density on SEB susceptibility are verified. Some hardening solutions to SEB are provided. The work shows that the 2D simulator MEDICI is an useful tool for burnout prediction and for the evaluation of hardening solutions. (authors)

  10. Implications of the spatial dependence of the single-event-upset threshold in SRAMs measured with a pulsed laser

    Buchner, S.; Langworthy, J.B.; Stapor, W.J.; Campbell, A.B.; Rivet, S.

    1994-01-01

    Pulsed laser light was used to measure single event upset (SEU) thresholds for a large number of memory cells in both CMOS and bipolar SRAMs. Results showed that small variations in intercell upset threshold could not explain the gradual rise in the curve of cross section versus linear energy transfer (LET). The memory cells exhibited greater intracell variations implying that the charge collection efficiency within a memory cell varies spatially and contributes substantially to the shape of the curve of cross section versus LET. The results also suggest that the pulsed laser can be used for hardness-assurance measurements on devices with sensitive areas larger than the diameter of the laser beam

  11. Simulation of thermal-neutron-induced single-event upset using particle and heavy-ion transport code system

    Arita, Yutaka; Kihara, Yuji; Mitsuhasi, Junichi; Niita, Koji; Takai, Mikio; Ogawa, Izumi; Kishimoto, Tadafumi; Yoshihara, Tsutomu

    2007-01-01

    The simulation of a thermal-neutron-induced single-event upset (SEU) was performed on a 0.4-μm-design-rule 4 Mbit static random access memory (SRAM) using particle and heavy-ion transport code system (PHITS): The SEU rates obtained by the simulation were in very good agreement with the result of experiments. PHITS is a useful tool for simulating SEUs in semiconductor devices. To further improve the accuracy of the simulation, additional methods for tallying the energy deposition are required for PHITS. (author)

  12. Transient analyzer

    Muir, M.D.

    1975-01-01

    The design and design philosophy of a high performance, extremely versatile transient analyzer is described. This sub-system was designed to be controlled through the data acquisition computer system which allows hands off operation. Thus it may be placed on the experiment side of the high voltage safety break between the experimental device and the control room. This analyzer provides control features which are extremely useful for data acquisition from PPPL diagnostics. These include dynamic sample rate changing, which may be intermixed with multiple post trigger operations with variable length blocks using normal, peak to peak or integrate modes. Included in the discussion are general remarks on the advantages of adding intelligence to transient analyzers, a detailed description of the characteristics of the PPPL transient analyzer, a description of the hardware, firmware, control language and operation of the PPPL transient analyzer, and general remarks on future trends in this type of instrumentation both at PPPL and in general

  13. Single-Event Effect Testing of the Vishay Si7414DN n-Type TrenchFET(Registered Trademark) Power MOSFET

    Lauenstein, J.-M.; Casey, M. C.; Campola, M. A.; Phan, A. M.; Wilcox, E. P.; Topper, A. D.; Ladbury, R. L.

    2017-01-01

    This study was being undertaken to determine the single event effect susceptibility of the commercial Vishay 60-V TrenchFET power MOSFET. Heavy-ion testing was conducted at the Texas AM University Cyclotron Single Event Effects Test Facility (TAMU) and the Lawrence Berkeley National Laboratory BASE Cyclotron Facility (LBNL). In addition, initial 200-MeV proton testing was conducted at Massachusetts General Hospital (MGH) Francis H. Burr Proton Beam Therapy Center. Testing was performed to evaluate this device for single-event effects from lower-LET, lighter ions relevant to higher risk tolerant space missions.

  14. Effect of trimetazidine treatment on the transient outward potassium current of the left ventricular myocytes of rats with streptozotocin-induced type 1 diabetes mellitus

    Xiang, Yu-luan; He, Li [Department of Cardiology, the Second Affiliated Hospital, Chongqing Medical University, Chongqing (China); Xiao, Jun [Department of Cardiology, Chongqing Emergency Medical Center, Chongqing (China); Xia, Shuang; Deng, Song-bai [Department of Cardiology, the Second Affiliated Hospital, Chongqing Medical University, Chongqing (China); Xiu, Yun [Institute of Life Science, Chongqing Medical University, Chongqing (China); She, Qiang [Department of Cardiology, the Second Affiliated Hospital, Chongqing Medical University, Chongqing (China)

    2012-02-17

    Cardiovascular complications are a leading cause of mortality in patients with diabetes mellitus (DM). The present study was designed to investigate the effects of trimetazidine (TMZ), an anti-angina drug, on transient outward potassium current (I{sub to}) remodeling in ventricular myocytes and the plasma contents of free fatty acid (FFA) and glucose in DM. Sprague-Dawley rats, 8 weeks old and weighing 200-250 g, were randomly divided into three groups of 20 animals each. The control group was injected with vehicle (1 mM citrate buffer), the DM group was injected with 65 mg/kg streptozotocin (STZ) for induction of type 1 DM, and the DM+TMZ group was injected with the same dose of STZ followed by a 4-week treatment with TMZ (60 mg·kg{sup −1}·day{sup −1}). All animals were then euthanized and their hearts excised and subjected to electrophysiological measurements or gene expression analyses. TMZ exposure significantly reversed the increased plasma FFA level in diabetic rats, but failed to change the plasma glucose level. The amplitude of I{sub to} was significantly decreased in left ventricular myocytes from diabetic rats relative to control animals (6.25 ± 1.45 vs 20.72 ± 2.93 pA/pF at +40 mV). The DM-associated I{sub to} reduction was attenuated by TMZ. Moreover, TMZ treatment reversed the increased expression of the channel-forming alpha subunit Kv1.4 and the decreased expression of Kv4.2 and Kv4.3 in diabetic rat hearts. These data demonstrate that TMZ can normalize, or partially normalize, the increased plasma FFA content, the reduced I{sub to} of ventricular myocytes, and the altered expression Kv1.4, Kv4.2, and Kv4.3 in type 1 DM.

  15. Effect of trimetazidine treatment on the transient outward potassium current of the left ventricular myocytes of rats with streptozotocin-induced type 1 diabetes mellitus

    Xiang, Yu-luan; He, Li; Xiao, Jun; Xia, Shuang; Deng, Song-bai; Xiu, Yun; She, Qiang

    2012-01-01

    Cardiovascular complications are a leading cause of mortality in patients with diabetes mellitus (DM). The present study was designed to investigate the effects of trimetazidine (TMZ), an anti-angina drug, on transient outward potassium current (I to ) remodeling in ventricular myocytes and the plasma contents of free fatty acid (FFA) and glucose in DM. Sprague-Dawley rats, 8 weeks old and weighing 200-250 g, were randomly divided into three groups of 20 animals each. The control group was injected with vehicle (1 mM citrate buffer), the DM group was injected with 65 mg/kg streptozotocin (STZ) for induction of type 1 DM, and the DM+TMZ group was injected with the same dose of STZ followed by a 4-week treatment with TMZ (60 mg·kg −1 ·day −1 ). All animals were then euthanized and their hearts excised and subjected to electrophysiological measurements or gene expression analyses. TMZ exposure significantly reversed the increased plasma FFA level in diabetic rats, but failed to change the plasma glucose level. The amplitude of I to was significantly decreased in left ventricular myocytes from diabetic rats relative to control animals (6.25 ± 1.45 vs 20.72 ± 2.93 pA/pF at +40 mV). The DM-associated I to reduction was attenuated by TMZ. Moreover, TMZ treatment reversed the increased expression of the channel-forming alpha subunit Kv1.4 and the decreased expression of Kv4.2 and Kv4.3 in diabetic rat hearts. These data demonstrate that TMZ can normalize, or partially normalize, the increased plasma FFA content, the reduced I to of ventricular myocytes, and the altered expression Kv1.4, Kv4.2, and Kv4.3 in type 1 DM

  16. Medium-energy heavy-ion single-event-burnout imaging of power MOSFETs

    Musseau, O.; Torres, A.; Campbell, A.B.; Knudson, A.R.; Buchner, S.; Fischer, B.; Schloegl, M.; Briand, P.

    1999-12-01

    The authors present the first experimental determination of the SEB sensitive area in a power MOSFET irradiated with a high-LET heavy-ion microbeam. They used a spectroscopy technique to perform coincident measurements of the charge collected in both source and drain junctions together, with a non-destructive technique (current limitation). The resulting charge collection images are related to the physical structure of the individual cells. These experimental data reveal the complex 3-dimensional behavior of a real structure, which can not easily be simulated using available tools. As the drain voltage is increased, the onset of burnout is reached, characterized by a sudden change in the charge collection image. Hot spots are observed where the collected charge reaches its maximum value. Those spots, due to burnout triggering events, correspond to areas where the silicon is degraded through thermal effects along a single ion track. This direct observation of SEB sensitive areas as applications for, either device hardening, by modifying doping profiles or layout of the cells, or for code calibration and device simulation.

  17. Analyzing Test-As-You-Fly Single Event Upset (SEU) Responses using SEU Data, Classical Reliability Models, and Space Environment Data

    Berg, Melanie; Label, Kenneth; Campola, Michael; Xapsos, Michael

    2017-01-01

    We propose a method for the application of single event upset (SEU) data towards the analysis of complex systems using transformed reliability models (from the time domain to the particle fluence domain) and space environment data.

  18. Compendium of Single Event Effects Test Results for Commercial Off-The-Shelf and Standard Electronics for Low Earth Orbit and Deep Space Applications

    Reddell, Brandon D.; Bailey, Charles R.; Nguyen, Kyson V.; O'Neill, Patrick M.; Wheeler, Scott; Gaza, Razvan; Cooper, Jaime; Kalb, Theodore; Patel, Chirag; Beach, Elden R.; hide

    2017-01-01

    We present the results of Single Event Effects (SEE) testing with high energy protons and with low and high energy heavy ions for electrical components considered for Low Earth Orbit (LEO) and for deep space applications.

  19. Characterization of System on a Chip (SoC) Single Event Upset (SEU) Responses Using SEU Data, Classical Reliability Models, and Space Environment Data

    Berg, Melanie; Label, Kenneth; Campola, Michael; Xapsos, Michael

    2017-01-01

    We propose a method for the application of single event upset (SEU) data towards the analysis of complex systems using transformed reliability models (from the time domain to the particle fluence domain) and space environment data.

  20. Proposal to search for mu- N -> e- N with a single event sensitivity below 10 -16

    Carey, R.M.; Lynch, K.R.; Miller, J.P.; Roberts, B.L.; /Boston U.; Marciano, W.J.; Semertzidis, Y.; Yamin, P.; /Brookhaven; Kolomensky, Yu.G.; /UC, Berkeley; Molzon, W.; /UC, Irvine; Popp, J.L.; /City Coll., N.Y.; Ankenbrandt, C.M.; /Fermilab /Idaho State U. /Illinois U., Urbana /Moscow, INR /Massachusetts U., Amherst /MUONS Inc., Batavia /Northwestern U.

    2008-10-01

    We propose a new experiment, Mu2e, to search for charged lepton flavor violation with unprecedented sensitivity. We will measure the ratio of the coherent neutrinoless conversion in the field of a nucleus of a negatively charged muon into an electron to the muon capture process: R{sub {mu}e} = {mu}{sup -} + A(Z,N) {yields} e{sup -} + A(Z,N)/{mu}{sup -} + A(Z,N) {yields} {nu}{sub {mu}} + A(Z-1, N), with a sensitivity R{sub {mu}e} {le} 6 x 10{sup -17} at 90% CL. This is almost a four order-of-magnitude improvement over the existing limit. The observation of such a process would be unambiguous evidence of physics beyond the Standard Model. Since the discovery of the muon in 1936, physicists have attempted to answer I.I. Rabi's famous question: 'Who ordered that?' Why is there a muon? What role does it play in the larger questions of why there are three families and flavors of quarks, leptons, and neutrinos? We know quarks mix through a mechanism described by the Cabbibo-Kobayashi-Maskawa matrix, which has been studied for forty years. Neutrino mixing has been observed in the last decade, but mixing among the family of charged leptons has never been seen. The current limits are of order 10{sup -11} - 10{sup -13} so the process is rare indeed. Why is such an experiment important and timely? A major motivation for experiments at the Large Hadron Collider (LHC) is the possible observation of supersymmetric particles in the TeV mass range. Many of these supersymmetric models predict a {mu}-e conversion signal at R{sub {mu}e} {approx} 10{sup -15}. We propose to search for {mu}-e conversion at a sensitivity that exceeds this by more than an order of magnitude. The LHC may not be able to conclusively distinguish among supersymmetric models, so Mu2e will provide invaluable information should the LHC observe a signal. In the case where the LHC finds no evidence of supersymmetry, or other beyond-the-standard-model physics, Mu2e will probe for new physics at mass

  1. Measurement and Analysis of Multiple Output Transient Propagation in BJT Analog Circuits

    Roche, Nicolas J.-H.; Khachatrian, A.; Warner, J. H.; Buchner, S. P.; McMorrow, D.; Clymer, D. A.

    2016-08-01

    The propagation of Analog Single Event Transients (ASETs) to multiple outputs of Bipolar Junction Transistor (BJTs) Integrated Circuits (ICs) is reported for the first time. The results demonstrate that ASETs can appear at several outputs of a BJT amplifier or comparator as a result of a single ion or single laser pulse strike at a single physical location on the chip of a large-scale integrated BJT analog circuit. This is independent of interconnect cross-talk or charge-sharing effects. Laser experiments, together with SPICE simulations and analysis of the ASET's propagation in the s-domain are used to explain how multiple-output transients (MOTs) are generated and propagate in the device. This study demonstrates that both the charge collection associated with an ASET and the ASET's shape, commonly used to characterize the propagation of SETs in devices and systems, are unable to explain quantitatively how MOTs propagate through an integrated analog circuit. The analysis methodology adopted here involves combining the Fourier transform of the propagating signal and the current-source transfer function in the s-domain. This approach reveals the mechanisms involved in the transient signal propagation from its point of generation to one or more outputs without the signal following a continuous interconnect path.

  2. Monte Carlo calculation of the cross-section of single event upset induced by 14MeV neutrons

    Li, H.; Deng, J.Y.; Chang, D.M.

    2005-01-01

    High-density static random access memory may experience single event upsets (SEU) in neutron environments. We present a new method to calculate the SEU cross-section. Our method is based on explicit generation and transport of the secondary reaction products and detailed accounting for energy loss by ionization. Instead of simulating the behavior of the circuit, we use the Monte Carlo method to simulate the process of energy deposition in sensitive volumes. Thus, we do not need to know details about the circuit. We only need a reasonable guess for the size of the sensitive volumes. In the Monte Carlo simulation, the cross-section of SEU induced by 14MeV neutrons is calculated. We can see that the Monte Carlo simulation not only can provide a new method to calculate SEU cross-section, but also can give a detailed description about random process of the SEU

  3. Nuclear data relevant to single-event upsets (SEU) in microelectronics and their application to SEU simulation

    Watanabe, Yukinobu; Tukamoto, Yasuyuki; Kodama, Akihiro; Nakashima, Hideki

    2004-01-01

    A cross-section database for neutron-induced reactions on 28 Si was developed in the energy range between 2 MeV and 3 GeV in order to analyze single-event upsets (SEUs) phenomena induced by cosmic-ray neutrons in microelectronic devices. A simplified spherical device model was proposed for simulation of the initial process of SEUs. The model was applied to SEU cross-section calculations for semiconductor memory devices. The calculated results were compared with measured SEU cross-sections and the other simulation result. The dependence of SEU cross-sections on incident neutron energy and secondary ions having the most important effects on SEUs are discussed. (author)

  4. Investigation of radial dose effect on single event upset cross-section due to heavy ions using GEANT4

    Boorboor, S.; Feghhi, S.A.H.; Jafari, H.

    2015-01-01

    The heavy ions are the main cause to produce single event upset (SEU) damage on electronic devices since they are high LET radiations. The dimension of electronic components in new technology, arise a challenge in radiation effect estimations. Accurate investigations require fully considering the ion track in energy deposition as a radial dose distribution. In this work, the distribution of delta rays as well as LET have been calculated to determine ionization structure around ion track by a Monte Carlo code, GEANT4. The radial dose of several heavy ions with different energy in silicon was investigated and compared with the works by other authors in this field. The results showed that heavy ions with identical LET can have different SEU cross-section in silicon transistors. As a demonstrative example, according to our results, the error probability for 4.8 GeV iron was 8 times greater than that for 15 MeV carbon ions, in transistors with new process technology which have small dimension and low critical charges. Our results show that considering radial dose distribution considerably improves the accuracy of the SEU cross-section estimation in electronic devices especially for new technologies. - Highlights: • The single event upset is produced by heavy ions interaction on electronic devices. • The radial dose of several heavy ions in silicon was calculated by GEANT4. • Heavy ions with identical LET had different SEU cross-section in silicon transistors. • Low dimension and critical charge devices were more sensitive to radial dose effect

  5. Broad Beam and Ion Microprobe Studies of Single-Event Upsets in High Speed 0.18micron Silicon Germanium Heterojunction Bipolar Transistors and Circuits

    Reed, Robert A.; Marshall, Paul W.; Pickel, Jim; Carts, Martin A.; Irwin, TIm; Niu, Guofu; Cressler, John; Krithivasan, Ramkumar; Fritz, Karl; Riggs, Pam

    2003-01-01

    SiGe based technology is widely recognized for its tremendous potential to impact the high speed microelectronic industry, and therefore the space industry, by monolithic incorporation of low power complementary logic with extremely high speed SiGe Heterojunction Bipolar Transistor (HBT) logic. A variety of studies have examined the ionizing dose, displacement damage and single event characteristics, and are reported. Accessibility to SiGe through an increasing number of manufacturers adds to the importance of understanding its intrinsic radiation characteristics, and in particular the single event effect (SEE) characteristics of the high bandwidth HBT based circuits. IBM is now manufacturing in its 3rd generation of their commercial SiGe processes, and access is currently available to the first two generations (known as and 6HP) through the MOSIS shared mask services with anticipated future release of the latest (7HP) process. The 5 HP process is described and is characterized by a emitter spacing of 0.5 micron and a cutoff frequency ff of 50 GHz, whereas the fully scaled 7HP HBT employs a 0.18 micron emitter and has an fT of 120 GHz. Previous investigations have the examined SEE response of 5 HP HBT circuits through both circuit testing and modeling. Charge collection modeling studies in the 5 H P process have also been conducted, but to date no measurements have been reported of charge collection in any SiGe HBT structures. Nor have circuit models for charge collection been developed in any version other than the 5 HP HBT structure. Our investigation reports the first indications of both charge collection and circuit response in IBM s 7HP-based SiGe process. We compare broad beam heavy ion SEU test results in a fully function Pseudo-Random Number (PRN) sequence generator up to frequencies of 12 Gbps versus effective LET, and also report proton test results in the same circuit. In addition, we examine the charge collection characteristics of individual 7HP HBT

  6. Reductions in the Cardiac Transient Outward K+ Current Ito Caused by Chronic β-Adrenergic Receptor Stimulation Are Partly Rescued by Inhibition of Nuclear Factor κB.

    Panama, Brian K; Korogyi, Adam S; Aschar-Sobbi, Roozbeh; Oh, Yena; Gray, Charles B B; Gang, Hongying; Brown, Joan Heller; Kirshenbaum, Lorrie A; Backx, Peter H

    2016-02-19

    The fast transient outward potassium current (Ito,f) plays a critical role in the electrical and contractile properties of the myocardium. Ito,f channels are formed by the co-assembly of the pore-forming α-subunits, Kv4.2 and Kv4.3, together with the accessory β-subunit KChIP2. Reductions of Ito,f are common in the diseased heart, which is also associated with enhanced stimulation of β-adrenergic receptors (β-ARs). We used cultured neonatal rat ventricular myocytes to examine how chronic β-AR stimulation decreases Ito,f. To determine which downstream pathways mediate these Ito,f changes, adenoviral infections were used to inhibit CaMKIIδc, CaMKIIδb, calcineurin, or nuclear factor κB (NF-κB). We observed that chronic β-AR stimulation with isoproterenol (ISO) for 48 h reduced Ito,f along with mRNA expression of all three of its subunits (Kv4.2, Kv4.3, and KChIP2). Inhibiting either CaMKIIδc nor CaMKIIδb did not prevent the ISO-mediated Ito,f reductions, even though CaMKIIδc and CaMKIIδb clearly regulated Ito,f and the mRNA expression of its subunits. Likewise, calcineurin inhibition did not prevent the Ito,f reductions induced by β-AR stimulation despite strongly modulating Ito,f and subunit mRNA expression. In contrast, NF-κB inhibition partly rescued the ISO-mediated Ito,f reductions in association with restoration of KChIP2 mRNA expression. Consistent with these observations, KChIP2 promoter activity was reduced by p65 as well as β-AR stimulation. In conclusion, NF-κB, and not CaMKIIδ or calcineurin, partly mediates the Ito,f reductions induced by chronic β-AR stimulation. Both mRNA and KChIP2 promoter data suggest that the ISO-induced Ito,f reductions are, in part, mediated through reduced KChIP2 transcription caused by NF-κB activation. © 2016 by The American Society for Biochemistry and Molecular Biology, Inc.

  7. Theoretical and experimental studies of single event effect induced by atmospheric muons on nano-metric technologies

    Li Cavoli, P.

    2016-01-01

    This study concerns the domain of the microelectronics. It consists in the study of the impact of the 3D morphology of the energy deposit on the Single Event Effect (SEE) modeling, induced by atmospheric muons. Over a first phase, the approach has consisted in the modeling of the energy deposit induced by protons in nano-metric volumes. For that purpose the use of the Monte Carlo code GEANT4 has allowed us to simulate and stock in a database the tracks characteristics of the energy deposit induced by protons. Once the approach validated for the protons, simulations of the energy deposit induced by muons have been realized. A CCD camera has been used in order to measure the radiative atmospheric environment and to constrain the modeling of the energy deposit induced by muons. This study highlights and quantify the contribution of the radial distribution of the energy deposit induced by protons in nano-metric volumes for the SEE prediction. On the other hand, the study shows that the contribution of the radial distribution of the energy deposit induced by muons in nano-metric volumes has a negligible impact on the SEE modeling. It will be interesting to realize measurements of the energy deposit induced by muons in nano-metric technologies under particle accelerator. This will allow to bring experimental data still nonexistent necessary to the development of new physical models more accurate on the modeling of the energy deposit induced by muons. (author)

  8. Feasibility of a neutron detector-dosemeter based on single-event upsets in dynamic random-access memories

    Phillips, G.W.; August, R.A.; Campbell, A.B.; Nelson, M.E.; Guardala, N.A.; Price, J.L.; Moscovitch, M.

    2002-01-01

    The feasibility was investigated of a solid-state neutron detector/dosemeter based on single-event upset (SEU) effects in dynamic random-access memories (DRAMs), commonly used in computer memories. Such a device, which uses a neutron converter material to produce a charged particle capable of causing an upset, would be light-weight, low-power, and could be read simply by polling the memory for bit flips. It would have significant advantages over standard solid-state neutron dosemeters which require off-line processing for track etching and analysis. Previous efforts at developing an SEU neutron detector/dosemeter have suffered from poor response, which can be greatly enhanced by selecting a modern high-density DRAM chip for SEU sensitivity and by using a thin 10 B film as a converter. Past attempts to use 10 B were not successful because the average alpha particle energy was insufficient to penetrate to the sensitive region of the memory. This can be overcome by removing the surface passivation layer before depositing the 10 B film or by implanting 10B directly into the chip. Previous experimental data show a 10 3 increase in neutron sensitivity by chips containing borosilicate glass, which could be used in an SEU detector. The results are presented of simulations showing that the absolute efficiency of an SEU neutron dosemeter can be increased by at least a factor of 1000 over earlier designs. (author)

  9. Effect of body biasing on single-event induced charge collection in deep N-well technology

    Ding Yi; Hu Jian-Guo; Tan Hong-Zhou; Qin Jun-Rui

    2015-01-01

    As the device size decreases, the soft error induced by space ions is becoming a great concern for the reliability of integrated circuits (ICs). At present, the body biasing technique is widely used in highly scaled technologies. In the paper, using the three-dimensional technology computer-aided design (TCAD) simulation, we analyze the effect of the body biasing on the single-event charge collection in deep N-well technology. Our simulation results show that the body biasing mainly affects the behavior of the source, and the effect of body biasing on the charge collection for the nMOSFET and pMOSFET is quite different. For the nMOSFET, the RBB will increase the charge collection, while the FBB will reduce the charge collection. For the pMOSFET, the effect of RBB on the SET pulse width is small, while the FBB has an adverse effect. Moreover, the differenceof the effect of body biasing on the charge collection is compared in deep N-well and twin well. (paper)

  10. Neutron-induced Single Event Upset on the RPC front-end chips for the CMS experiment

    Abbrescia, M.; Colaleo, A.; Iaselli, G.; Loddo, F.; Maggi, M.; Marangelli, B.; Natali, S.; Nuzzo, S.; Pugliese, G.; Ranieri, A.; Romano, F.; Altieri, S.; Belli, G.; Bruno, G.; Guida, R.; Merlo, M.; Ratti, S.P.; Riccardi, C.; Torre, P.; Vitulo, P. E-mail: paolo.vitulo@pv.infn.it; De Bari, A.; Manera, S

    2002-05-21

    Neutrons from a reactor and from a cyclotron have been used to characterise the CMS Resistive Plate Chambers (RPCs) front-end chip to neutron-induced damaging events. Single Event Upset (SEU) cross-sections have been measured up to 60 MeV for different chip thresholds. Tests at a reactor were done with an integrated fast (E{sub n}>3 MeV) neutron fluence of 1.7x10{sup 10} cm{sup -2} and a thermal neutron fluence of 9.5x10{sup 11} cm{sup -2}. High-energy neutrons from a cyclotron were used up to a fluence of 10{sup 12} cm{sup -2}. Data indicate the existence of a chip SEU sensitivity already at thermal energy and a saturated SEU cross-section from 3 to 60 MeV. Values of the SEU cross-sections from the thermal run well agree with those obtained by another CMS group that uses the same technology (0.8 {mu}m BiCMOS) though with different architecture. Cross-sections obtained with fast neutrons (from 3 MeV to about 10 MeV) are consistently higher by one order of magnitude compared to the thermal one. The average time between consecutive SEU events in each chip of the CMS barrel RPCs can be estimated to be 1 h.

  11. A full-angle Monte-Carlo scattering technique including cumulative and single-event Rutherford scattering in plasmas

    Higginson, Drew P.

    2017-11-01

    We describe and justify a full-angle scattering (FAS) method to faithfully reproduce the accumulated differential angular Rutherford scattering probability distribution function (pdf) of particles in a plasma. The FAS method splits the scattering events into two regions. At small angles it is described by cumulative scattering events resulting, via the central limit theorem, in a Gaussian-like pdf; at larger angles it is described by single-event scatters and retains a pdf that follows the form of the Rutherford differential cross-section. The FAS method is verified using discrete Monte-Carlo scattering simulations run at small timesteps to include each individual scattering event. We identify the FAS regime of interest as where the ratio of temporal/spatial scale-of-interest to slowing-down time/length is from 10-3 to 0.3-0.7; the upper limit corresponds to Coulomb logarithm of 20-2, respectively. Two test problems, high-velocity interpenetrating plasma flows and keV-temperature ion equilibration, are used to highlight systems where including FAS is important to capture relevant physics.

  12. Test Standard Revision Update: JESD57, "Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation"

    Lauenstein, Jean-Marie

    2015-01-01

    The JEDEC JESD57 test standard, Procedures for the Measurement of Single-Event Effects in Semiconductor Devices from Heavy-Ion Irradiation, is undergoing its first revision since 1996. In this talk, we place this test standard into context with other relevant radiation test standards to show its importance for single-event effect radiation testing for space applications. We show the range of industry, government, and end-user party involvement in the revision. Finally, we highlight some of the key changes being made and discuss the trade-space in which setting standards must be made to be both useful and broadly adopted.

  13. Transient FDTD simulation validation

    Jauregui Tellería, Ricardo; Riu Costa, Pere Joan; Silva Martínez, Fernando

    2010-01-01

    In computational electromagnetic simulations, most validation methods have been developed until now to be used in the frequency domain. However, the EMC analysis of the systems in the frequency domain many times is not enough to evaluate the immunity of current communication devices. Based on several studies, in this paper we propose an alternative method of validation of the transients in time domain allowing a rapid and objective quantification of the simulations results.

  14. Single-event phenomena on recent semiconductor devices. Charge-type multiple-bit upsets in high integrated memories

    Makihara, Akiko; Shindou, Hiroyuki; Nemoto, Norio; Kuboyama, Satoshi; Matsuda, Sumio; Ohshima, Takeshi; Hirao, Toshio; Itoh, Hisayoshi

    2001-01-01

    High integrated memories are used in solid state data recorder (SSDR) of the satellite for accumulating observation data. Single event upset phenomena which turn over an accumulated data in the memory cells are caused by heavy ion incidence. Studies on single-bit upset and multiple-bit upset phenomena in the high integrated memory cells are in progress recently. 16 Mbit DRAM (Dynamic Random Access Memories) and 64 Mbit DRAM are irradiated by heavy ion species, such as iodine, bromine and nickel, in comparison with the irradiation damage in the cosmic environment. Data written on the memory devices are read out after the irradiation. The memory cells in three kinds of states, all of charged state, all of discharged state, and an alternative state of charge and discharge, are irradiated for sorting out error modes caused by heavy ion incidence. The soft error in a single memory cells is known as a turn over from charged state to discharged state. Electrons in electron-hole pair generated by heavy ion incidence are captured in a diffusion region between capacitor electrodes of semiconductor. The charged states in the capacitor electrodes before the irradiation are neutralized and changed to the discharged states. According to high integration of the memories, many of the cells are affected by a single ion incidence. The multiple-bit upsets, however, are generated in the memory cells of discharged state before the irradiation, also. The charge-type multiple-bit upsets is considered as that error data are written on the DRAM during refresh cycle of a sense-up circuit and a pre-charge circuit which control the DRAM. (M. Suetake)

  15. High-resolution three-dimensional imaging of a depleted CMOS sensor using an edge Transient Current Technique based on the Two Photon Absorption process (TPA-eTCT)

    García, Marcos Fernández; Echeverría, Richard Jaramillo; Moll, Michael; Santos, Raúl Montero; Moya, David; Pinto, Rogelio Palomo; Vila, Iván

    2016-01-01

    For the first time, the deep n-well (DNW) depletion space of a High Voltage CMOS sensor has been characterized using a Transient Current Technique based on the simultaneous absorption of two photons. This novel approach has allowed to resolve the DNW implant boundaries and therefore to accurately determine the real depleted volume and the effective doping concentration of the substrate. The unprecedented spatial resolution of this new method comes from the fact that measurable free carrier generation in two photon mode only occurs in a micrometric scale voxel around the focus of the beam. Real three-dimensional spatial resolution is achieved by scanning the beam focus within the sample.

  16. High-resolution three-dimensional imaging of a depleted CMOS sensor using an edge Transient Current Technique based on the Two Photon Absorption process (TPA-eTCT)

    García, Marcos Fernández; Sánchez, Javier González; Echeverría, Richard Jaramillo [Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain); Moll, Michael [CERN, Organisation europénne pour la recherche nucléaire, CH-1211 Genéve 23 (Switzerland); Santos, Raúl Montero [SGIker Laser Facility, UPV/EHU, Sarriena, s/n - 48940 Leioa-Bizkaia (Spain); Moya, David [Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain); Pinto, Rogelio Palomo [Departamento de Ingeniería Electrónica, Escuela Superior de Ingenieros Universidad de Sevilla (Spain); Vila, Iván [Instituto de Física de Cantabria (CSIC-UC), Avda. los Castros s/n, E-39005 Santander (Spain)

    2017-02-11

    For the first time, the deep n-well (DNW) depletion space of a High Voltage CMOS sensor has been characterized using a Transient Current Technique based on the simultaneous absorption of two photons. This novel approach has allowed to resolve the DNW implant boundaries and therefore to accurately determine the real depleted volume and the effective doping concentration of the substrate. The unprecedented spatial resolution of this new method comes from the fact that measurable free carrier generation in two photon mode only occurs in a micrometric scale voxel around the focus of the beam. Real three-dimensional spatial resolution is achieved by scanning the beam focus within the sample.

  17. Theoretical approach to cell-impedance-controlled lithium transport through Li1-δMn2O4 film electrode with partially inactive fractal surface by analyses of potentiostatic current transient and linear sweep voltammogram

    Jung, Kyu-Nam; Pyun, Su-Il

    2007-01-01

    Lithium transport through the partially inactive fractal Li 1-δ Mn 2 O 4 film electrode under the cell-impedance-controlled constraint was theoretically investigated by using the kinetic Monte Carlo method based upon random walk approach. Under the cell-impedance-controlled constraint, all the potentiostatic current transients calculated from the totally active and partially inactive fractal electrodes hardly exhibited the generalised Cottrell behaviour and they were significantly affected in shape by the interfacial charge-transfer kinetics. In the case of the linear sweep voltammogram determined from the totally active and partially inactive fractal electrodes, all the power dependence of the peak current on the scan rate above the characteristic scan rate deviated from the generalised Randles-Sevcik behaviour. From the analyses of the current transients and the linear sweep voltammograms simulated with various values of the simulation parameters, it was further recognised that the cell-impedance-controlled lithium transport through the partially inactive fractal Li 1-δ Mn 2 O 4 film electrode strongly deviates from the generalised diffusion-controlled transport behaviour of the electrode with the totally active surface, which is attributed to the impeded interfacial charge-transfer kinetics governed by the surface inhomogeneities including the fractal dimension of the surface and the surface coverage by active sites and by the kinetic parameters including the internal cell resistance

  18. Transient two-phase flow

    Hsu, Y.Y.

    1974-01-01

    The following papers related to two-phase flow are summarized: current assumptions made in two-phase flow modeling; two-phase unsteady blowdown from pipes, flow pattern in Laval nozzle and two-phase flow dynamics; dependence of radial heat and momentum diffusion; transient behavior of the liquid film around the expanding gas slug in a vertical tube; flooding phenomena in BWR fuel bundles; and transient effects in bubble two-phase flow. (U.S.)

  19. Transient pseudohypoaldosteronism

    Stajić Nataša

    2011-01-01

    Full Text Available Introduction. Infants with urinary tract malformations (UTM presenting with urinary tract infection (UTI are prone to develop transient type 1 pseudohypoaldosteronism (THPA1. Objective. Report on patient series with characteristics of THPA1, UTM and/or UTI and suggestions for the diagnosis and therapy. Methods. Patients underwent blood and urine electrolyte and acid-base analysis, serum aldosterosterone levels and plasma rennin activity measuring; urinalysis, urinoculture and renal ultrasound were done and medical and/or surgical therapy was instituted. Results. Hyponatraemia (120.9±5.8 mmol/L, hyperkalaemia (6.9±0.9 mmol/L, metabolic acidosis (plasma bicarbonate, 11±1.4 mmol/L, and a rise in serum creatinine levels (145±101 μmol/L were associated with inappropriately high urinary sodium (51.3±17.5 mmol/L and low potassium (14.1±5.9 mmol/L excretion. Elevated plasma aldosterone concentrations (170.4±100.5 ng/dL and the very high levels of the plasma aldosterone to potassium ratio (25.2±15.6 together with diminished urinary K/Na values (0.31±0.19 indicated tubular resistance to aldosterone. After institution of appropriate medical and/or surgical therapy, serum electrolytes, creatinine, and acid-base balance were normalized. Imaging studies showed ureteropyelic or ureterovesical junction obstruction in 3 and 2 patients, respectively, posterior urethral valves in 3, and normal UT in 1 patient. According to our knowledge, this is the first report on THPA1 in the Serbian literature. Conclusion. Male infants with hyponatraemia, hyperkalaemia and metabolic acidosis have to have their urine examined and the renal ultrasound has to be done in order to avoid both, the underdiagnosis of THPA1 and the inappropriate medication.

  20. Technique and Calculation Results of Currents and Voltages in the Circuits of the Measuring Element of the Protection Device of the Transmission Line Based on the Control of Transient Processes

    Lachugin, V. F.; Kulikov, A. L.; Platonov, P. S.; Vucolov, V. Yu.

    2017-12-01

    The specifics of generation of the signals of current and voltage in the circuits of a directional element of wave relay protection during short circuit (SC) in overhead power transmission lines are considered. The computing method of transient processes in the protection circuits, including frequency filters, that attenuate the parameters of currents and voltages of the mode taking into account the higher harmonic components and probable deviations of the frequency of transmission line from the rated value is presented. It is revealed that it is advisable to implement the measuring circuits of the directional elements of wave relay protection with the three-section filter attenuating the frequencies from 45 to 55 Hz and the low pass filter with cutoff frequency that does not exceed 1 kHz.

  1. Kinetic modelling of hydrocracking catalytic reactions by the single events theory; Modelisation cinetique des reactions catalytiques d`hydrocraquage par la theorie des evenements constitutifs

    Schweitzer, J.M.

    1998-11-23

    Kinetic modelling of petroleum hydrocracking is particularly difficult given the complexity of the feedstocks. There are two distinct classes of kinetics models: lumped empirical models and detailed molecular models. The productivity of lumped empirical models is generally not very accurate, and the number of kinetic parameters increases rapidly with the number of lumps. A promising new methodology is the use of kinetic modelling based on the single events theory. Due to the molecular approach, a finite and limited number of kinetic parameters can describe the kinetic behaviour of the hydrocracking of heavy feedstock. The parameters are independent of the feedstock. However, the available analytical methods are not able to identify the products on the molecular level. This can be accounted for by means of an posteriori lamping technique, which incorporates the detailed knowledge of the elementary step network. Thus, the lumped kinetic parameters are directly calculated from the fundamental kinetic coefficients and the single event model is reduced to a re-lumped molecular model. Until now, the ability of the method to extrapolate to higher carbon numbers had not been demonstrated. In addition, no study had been published for three phase (gas-liquid-solid) systems and a complex feedstock. The objective of this work is to validate the `single events` method using a paraffinic feedstock. First of all, a series of experiments was conducted on a model compound (hexadecane) in order to estimate the fundamental kinetic parameters for acyclic molecules. To validate the single event approach, these estimated kinetic coefficients were used to simulate hydrocracking of a paraffinic mixture ranging from C11 to C18. The simulation results were then compared to the results obtained from the hydrocracking experiments. The comparison allowed to validate the model for acyclic molecules and to demonstrate that the model is applicable to compounds with higher carbon numbers. (author

  2. The activity of spontaneous action potentials in developing hair cells is regulated by Ca(2+-dependence of a transient K+ current.

    Snezana Levic

    Full Text Available Spontaneous action potentials have been described in developing sensory systems. These rhythmic activities may have instructional roles for the functional development of synaptic connections. The importance of spontaneous action potentials in the developing auditory system is underpinned by the stark correlation between the time of auditory system functional maturity, and the cessation of spontaneous action potentials. A prominent K(+ current that regulates patterning of action potentials is I(A. This current undergoes marked changes in expression during chicken hair cell development. Although the properties of I(A are not normally classified as Ca(2+-dependent, we demonstrate that throughout the development of chicken hair cells, I(A is greatly reduced by acute alterations of intracellular Ca(2+. As determinants of spike timing and firing frequency, intracellular Ca(2+ buffers shift the activation and inactivation properties of the current to more positive potentials. Our findings provide evidence to demonstrate that the kinetics and functional expression of I(A are tightly regulated by intracellular Ca(2+. Such feedback mechanism between the functional expression of I(A and intracellular Ca(2+ may shape the activity of spontaneous action potentials, thus potentially sculpting synaptic connections in an activity-dependent manner in the developing cochlea.

  3. The supply voltage scaled dependency of the recovery of single event upset in advanced complementary metal—oxide—semiconductor static random-access memory cells

    Li Da-Wei; Qin Jun-Rui; Chen Shu-Ming

    2013-01-01

    Using computer-aided design three-dimensional simulation technology, the supply voltage scaled dependency of the recovery of single event upset and charge collection in static random-access memory cells are investigated. It reveals that the recovery linear energy transfer threshold decreases with the supply voltage reducing, which is quite attractive for dynamic voltage scaling and subthreshold circuit radiation-hardened design. Additionally, the effect of supply voltage on charge collection is also investigated. It is concluded that the supply voltage mainly affects the bipolar gain of the parasitical bipolar junction transistor (BJT) and the existence of the source plays an important role in supply voltage variation. (geophysics, astronomy, and astrophysics)

  4. Transient drainage summary report

    1996-09-01

    This report summarizes the history of transient drainage issues on the Uranium Mill Tailings Remedial Action (UMTRA) Project. It defines and describes the UMTRA Project disposal cell transient drainage process and chronicles UMTRA Project treatment of the transient drainage phenomenon. Section 4.0 includes a conceptual cross section of each UMTRA Project disposal site and summarizes design and construction information, the ground water protection strategy, and the potential for transient drainage

  5. PSH Transient Simulation Modeling

    Muljadi, Eduard [National Renewable Energy Laboratory (NREL), Golden, CO (United States)

    2017-12-21

    PSH Transient Simulation Modeling presentation from the WPTO FY14 - FY16 Peer Review. Transient effects are an important consideration when designing a PSH system, yet numerical techniques for hydraulic transient analysis still need improvements for adjustable-speed (AS) reversible pump-turbine applications.

  6. Recent development of transient electronics

    Huanyu Cheng

    2016-01-01

    Full Text Available Transient electronics are an emerging class of electronics with the unique characteristic to completely dissolve within a programmed period of time. Since no harmful byproducts are released, these electronics can be used in the human body as a diagnostic tool, for instance, or they can be used as environmentally friendly alternatives to existing electronics which disintegrate when exposed to water. Thus, the most crucial aspect of transient electronics is their ability to disintegrate in a practical manner and a review of the literature on this topic is essential for understanding the current capabilities of transient electronics and areas of future research. In the past, only partial dissolution of transient electronics was possible, however, total dissolution has been achieved with a recent discovery that silicon nanomembrane undergoes hydrolysis. The use of single- and multi-layered structures has also been explored as a way to extend the lifetime of the electronics. Analytical models have been developed to study the dissolution of various functional materials as well as the devices constructed from this set of functional materials and these models prove to be useful in the design of the transient electronics.

  7. In-Flight Observations of Long-Term Single Event Effect(SEE)Performance on Orbview-2 and Xray Timing Explorer(XTE)Solid State Recorders (SSR)

    Poivey, Christian; Barth, Janet L.; LaBel, Ken A.; Gee, George; Safren, Harvey

    2003-01-01

    This paper presents Single Event Effect (SEE) in-flight data on Solid State Recorders (SSR) that have been collected over a long period of time for two NASA spacecraft: Orbview-2 and XTE. SEE flight data on solid-state memories give an opportunity to study the behavior in space of SEE sensitive commercial devices. The actual Single Event Upset (SEU) rates can be compared with the calculated rates based on environment models and ground test data. The SEE mitigation schemes can also be evaluated in actual implementation. A significant amount of data has already been published concerning observed SEE effects on memories in space. However, most of the data presented cover either a short period of time or a small number of devices. The data presented here has been collected on a large number of devices during several years. This allows statistically significant information about the effect of space weather fluctuations on SEU rates, and the effectiveness of SEE countermeasures used to be analyzed. Only Orbview-2 data is presented in this summary. XTE data will be included in the final paper.

  8. Transient osteoporosis of pregnancy.

    Maliha, George; Morgan, Jordan; Vrahas, Mark

    2012-08-01

    Transient osteoporosis of pregnancy (TOP) is a rare yet perhaps under-reported condition that has affected otherwise healthy pregnancies throughout the world. The condition presents suddenly in the third trimester of a usually uneventful pregnancy and progressively immobilizes the mother. Radiographic studies detect drastic loss of bone mass, elevated rates of turnover in the bone, and oedema in the affected portion. Weakness of the bone can lead to fractures during delivery and other complications for the mother. Then, within weeks of labour, symptoms and radiological findings resolve. Aetiology is currently unknown, although neural, vascular, haematological, endocrine, nutrient-deficiency, and other etiologies have been proposed. Several treatments have also been explored, including simple bed rest, steroids, bisphosphonates, calcitonin, induced termination of pregnancy, and surgical intervention. The orthopedist plays an essential role in monitoring the condition (and potential complications) as well as ensuring satisfactory outcomes for both the mother and newborn. Copyright © 2012 Elsevier Ltd. All rights reserved.

  9. Near interface traps in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors monitored by temperature dependent gate current transient measurements

    Fiorenza, Patrick; La Magna, Antonino; Vivona, Marilena; Roccaforte, Fabrizio [Consiglio Nazionale delle Ricerche-Istituto per la Microelettronica e Microsistemi (CNR-IMM), Strada VIII 5, Zona Industriale 95121 Catania (Italy)

    2016-07-04

    This letter reports on the impact of gate oxide trapping states on the conduction mechanisms in SiO{sub 2}/4H-SiC metal-oxide-semiconductor field effect transistors (MOSFETs). The phenomena were studied by gate current transient measurements, performed on n-channel MOSFETs operated in “gate-controlled-diode” configuration. The measurements revealed an anomalous non-steady conduction under negative bias (V{sub G} > |20 V|) through the SiO{sub 2}/4H-SiC interface. The phenomenon was explained by the coexistence of a electron variable range hopping and a hole Fowler-Nordheim (FN) tunnelling. A semi-empirical modified FN model with a time-depended electric field is used to estimate the near interface traps in the gate oxide (N{sub trap} ∼ 2 × 10{sup 11} cm{sup −2}).

  10. Review of HEDL fuel pin transient analyses analytical programs

    Scott, J.H.; Baars, R.E.

    1975-05-01

    Methods for analysis of transient fuel pin performance are described, as represented by the steady-state SIEX code and the PECT series of codes used for steady-state and transient mechanical analyses. The empirical fuel failure correlation currently in use for analysis of transient overpower accidents is described. (U.S.)

  11. Development of a Nuclear Reaction Database on Silicon for Simulation of Neutron-Induced Single-Event Upsets in Microelectronics and its Application

    Watanabe, Yukinobu; Kodama, Akihiro; Tukamoto, Yasuyuki; Nakashima, Hideki

    2005-01-01

    We have developed a cross-section database for neutron-induced reactions on 28Si in the energy range between 2 MeV and 3 GeV in order to analyze single-event upsets (SEUs) phenomena induced by cosmic-ray neutrons in microelectronic devices. A simplified spherical device model is proposed for simulation of the initial processes of SEUs. The model is applied to SEU cross-section calculations for semiconductor memory devices. The calculated results are compared with measured SEU cross sections and the other simulation result. The dependence of SEU cross sections on incident neutron energy and secondary ions having the most important effects on SEUs are discussed

  12. Single Event Upset Analysis: On-orbit performance of the Alpha Magnetic Spectrometer Digital Signal Processor Memory aboard the International Space Station

    Li, Jiaqiang; Choutko, Vitaly; Xiao, Liyi

    2018-03-01

    Based on the collection of error data from the Alpha Magnetic Spectrometer (AMS) Digital Signal Processors (DSP), on-orbit Single Event Upsets (SEUs) of the DSP program memory are analyzed. The daily error distribution and time intervals between errors are calculated to evaluate the reliability of the system. The particle density distribution of International Space Station (ISS) orbit is presented and the effects from the South Atlantic Anomaly (SAA) and the geomagnetic poles are analyzed. The impact of solar events on the DSP program memory is carried out combining data analysis and Monte Carlo simulation (MC). From the analysis and simulation results, it is concluded that the area corresponding to the SAA is the main source of errors on the ISS orbit. Solar events can also cause errors on DSP program memory, but the effect depends on the on-orbit particle density.

  13. TRANSIENT ELECTRONICS CATEGORIZATION

    2017-08-24

    AFRL-RY-WP-TR-2017-0169 TRANSIENT ELECTRONICS CATEGORIZATION Dr. Burhan Bayraktaroglu Devices for Sensing Branch Aerospace Components & Subsystems...SUBTITLE TRANSIENT ELECTRONICS CATEGORIZATION 5a. CONTRACT NUMBER In-house 5b. GRANT NUMBER N/A 5c. PROGRAM ELEMENT NUMBER N/A 6. AUTHOR(S) Dr. Burhan...88ABW-2017-3747, Clearance Date 31 July 2017. Paper contains color. 14. ABSTRACT Transient electronics is an emerging technology area that lacks proper

  14. Spectroscopic classification of transients

    Stritzinger, M. D.; Fraser, M.; Hummelmose, N. N.

    2017-01-01

    We report the spectroscopic classification of several transients based on observations taken with the Nordic Optical Telescope (NOT) equipped with ALFOSC, over the nights 23-25 August 2017.......We report the spectroscopic classification of several transients based on observations taken with the Nordic Optical Telescope (NOT) equipped with ALFOSC, over the nights 23-25 August 2017....

  15. Electromagnetic Transients in Power Cables

    Silva, Filipe Faria Da; Bak, Claus Leth

    . The chapter ends by proposing a systematic method that can be used when doing the insulation co-ordination study for a line, as well as the modelling requirements, both modelling depth and modelling detail of the equipment, for the study of the different types of transients followed by a step-by-step generic...... typically used for the screens of cables (both-ends bonding and cross-boding) and also presents methods that can be used to estimate the maximum current of a cable for different types of soils, i.e. thermal calculations. The end of the chapter introduces the shunt reactor, which is an important element...... detail of the equipment, for the study of the different types of transients followed by a step-by-step generic example....

  16. Summary of transient analysis

    Saha, P.

    1984-01-01

    This chapter reviews the papers on the pressurized water reactor (PWR) and boiling water reactor (BWR) transient analyses given at the American Nuclear Society Topical Meeting on Anticipated and Abnormal Plant Transients in Light Water Reactors. Most of the papers were based on the systems calculations performed using the TRAC-PWR, RELAP5 and RETRAN codes. The status of the nuclear industry in the code applications area is discussed. It is concluded that even though comprehensive computer codes are available for plant transient analysis, there is still a need to exercise engineering judgment, simpler tools and even hand calculations to supplement these codes

  17. Analysis by Monte Carlo simulations of the sensitivity to single event upset of SRAM memories under spatial proton or terrestrial neutron environment

    Lambert, D.

    2006-07-01

    Electronic systems in space and terrestrial environments are subjected to a flow of particles of natural origin, which can induce dysfunctions. These particles can cause Single Event Upsets (SEU) in SRAM memories. Although non-destructive, the SEU can have consequences on the equipment functioning in applications requiring a great reliability (airplane, satellite, launcher, medical, etc). Thus, an evaluation of the sensitivity of the component technology is necessary to predict the reliability of a system. In atmospheric environment, the SEU sensitivity is mainly caused by the secondary ions resulting from the nuclear reactions between the neutrons and the atoms of the component. In space environment, the protons with strong energies induce the same effects as the atmospheric neutrons. In our work, a new code of prediction of the rate of SEU has been developed (MC-DASIE) in order to quantify the sensitivity for a given environment and to explore the mechanisms of failures according to technology. This code makes it possible to study various technologies of memories SRAM (Bulk and SOI) in neutron and proton environment between 1 MeV and 1 GeV. Thus, MC-DASIE was used with experiment data to study the effect of integration on the sensitivity of the memories in terrestrial environment, a comparison between the neutron and proton irradiations and the influence of the modeling of the target component on the calculation of the rate of SEU. (author)

  18. PWR systems transient analysis

    Kennedy, M.F.; Peeler, G.B.; Abramson, P.B.

    1985-01-01

    Analysis of transients in pressurized water reactor (PWR) systems involves the assessment of the response of the total plant, including primary and secondary coolant systems, steam piping and turbine (possibly including the complete feedwater train), and various control and safety systems. Transient analysis is performed as part of the plant safety analysis to insure the adequacy of the reactor design and operating procedures and to verify the applicable plant emergency guidelines. Event sequences which must be examined are developed by considering possible failures or maloperations of plant components. These vary in severity (and calculational difficulty) from a series of normal operational transients, such as minor load changes, reactor trips, valve and pump malfunctions, up to the double-ended guillotine rupture of a primary reactor coolant system pipe known as a Large Break Loss of Coolant Accident (LBLOCA). The focus of this paper is the analysis of all those transients and accidents except loss of coolant accidents

  19. Transients: The regulator's view

    Sheron, B.W.; Speis, T.P.

    1984-01-01

    This chapter attempts to clarify the basis for the regulator's concerns for transient events. Transients are defined as both anticipated operational occurrences and postulated accidents. Recent operational experience, supplemented by improved probabilistic risk analysis methods, has demonstrated that non-LOCA transient events can be significant contributors to overall risk. Topics considered include lessons learned from events and issues, the regulations governing plant transients, multiple failures, different failure frequencies, operator errors, and public pressure. It is concluded that the formation of Owners Groups and Regulatory Response Groups within the owners groups are positive signs of the industry's concern for safety and responsible dealing with the issues affecting both the US NRC and the industry

  20. Transient multivariable sensor evaluation

    Vilim, Richard B.; Heifetz, Alexander

    2017-02-21

    A method and system for performing transient multivariable sensor evaluation. The method and system includes a computer system for identifying a model form, providing training measurement data, generating a basis vector, monitoring system data from sensor, loading the system data in a non-transient memory, performing an estimation to provide desired data and comparing the system data to the desired data and outputting an alarm for a defective sensor.

  1. Switching transients in a superconducting coil

    Owen, E.W.; Shimer, D.W.

    1983-01-01

    A study is made of the transients caused by the fast dump of large superconducting coils. Theoretical analysis, computer simulation, and actual measurements are used. Theoretical analysis can only be applied to the simplest of models. In the computer simulations two models are used, one in which the coil is divided into ten segments and another in which a single coil is employed. The circuit breaker that interrupts the current to the power supply, causing a fast dump, is represented by a time and current dependent conductance. Actual measurements are limited to measurements made incidental to performance tests on the MFTF Yin-yang coils. It is found that the breaker opening time is the critical factor in determining the size and shape of the transient. Instantaneous opening of the breaker causes a lightly damped transient with large amplitude voltages to ground. Increasing the opening time causes the transient to become a monopulse of decreasing amplitude. The voltages at the external terminals are determined by the parameters of the external circuit. For fast opening times the frequency depends on the dump resistor inductance, the circuit capacitance, and the amplitude on the coil current. For slower openings the dump resistor inductance and the current determine the amplitude of the voltage to ground at the terminals. Voltages to ground are less in the interior of the coil, where transients related to the parameters of the coil itself are observed

  2. Notice of Violation of IEEE Publication PrinciplesJoint Redundant Residue Number Systems and Module Isolation for Mitigating Single Event Multiple Bit Upsets in Datapath

    Li, Lei; Hu, Jianhao

    2010-12-01

    Notice of Violation of IEEE Publication Principles"Joint Redundant Residue Number Systems and Module Isolation for Mitigating Single Event Multiple Bit Upsets in Datapath"by Lei Li and Jianhao Hu,in the IEEE Transactions on Nuclear Science, vol.57, no.6, Dec. 2010, pp. 3779-3786After careful and considered review of the content and authorship of this paper by a duly constituted expert committee, this paper has been found to be in violation of IEEE's Publication Principles.This paper contains substantial duplication of original text from the paper cited below. The original text was copied without attribution (including appropriate references to the original author(s) and/or paper title) and without permission.Due to the nature of this violation, reasonable effort should be made to remove all past references to this paper, and future references should be made to the following articles:"Multiple Error Detection and Correction Based on Redundant Residue Number Systems"by Vik Tor Goh and M.U. Siddiqi,in the IEEE Transactions on Communications, vol.56, no.3, March 2008, pp.325-330"A Coding Theory Approach to Error Control in Redundant Residue Number Systems. I: Theory and Single Error Correction"by H. Krishna, K-Y. Lin, and J-D. Sun, in the IEEE Transactions on Circuits and Systems II: Analog and Digital Signal Processing, vol.39, no.1, Jan 1992, pp.8-17In this paper, we propose a joint scheme which combines redundant residue number systems (RRNS) with module isolation (MI) for mitigating single event multiple bit upsets (SEMBUs) in datapath. The proposed hardening scheme employs redundant residues to improve the fault tolerance for datapath and module spacings to guarantee that SEMBUs caused by charge sharing do not propagate among the operation channels of different moduli. The features of RRNS, such as independence, parallel and error correction, are exploited to establish the radiation hardening architecture for the datapath in radiation environments. In the proposed

  3. Development of Single-Event Upset hardened programmable logic devices in deep submicron CMOS; Developpement de circuits logiques programmables resistants aux aleas logiques en technologie CMOS submicrometrique

    Bonacini, S

    2007-11-15

    The electronics associated to the particle detectors of the Large Hadron Collider (LHC), under construction at CERN, will operate in a very harsh radiation environment. Commercial Off-The-Shelf (COTS) components cannot be used in the vicinity of particle collision due to their poor radiation tolerance. This thesis is a contribution to the effort to cover the need for radiation-tolerant SEU-robust (Single Event Upset) programmable components for application in high energy physics experiments. Two components are under development: a Programmable Logic Device (PLD) and a Field-Programmable Gate Array (FPGA). The PLD is a fuse-based, 10-input, 8-I/O general architecture device in 0.25 {mu}m CMOS technology. The FPGA under development is a 32*32 logic block array, equivalent to {approx} 25 k gates, in 0.13 {mu}m CMOS. The irradiation test results obtained in the CMOS 0.25 {mu}m technology demonstrate good robustness of the circuit up to an LET (Linear Energy Transfer) of 79.6 cm{sup 2}*MeV/mg, which make it suitable for the target environment. The CMOS 0.13 {mu}m circuit has showed robustness to an LET of 37.4 cm{sup 2}*MeV/mg in the static test mode and has increased sensitivity in the dynamic test mode. This work focused also on the research for an SEU-robust register in both the mentioned technologies. The SEU-robust register is employed as a user data flip-flop in the FPGA and PLD designs and as a configuration cell as well in the FPGA design.

  4. Transient flow combustion

    Tacina, R. R.

    1984-01-01

    Non-steady combustion problems can result from engine sources such as accelerations, decelerations, nozzle adjustments, augmentor ignition, and air perturbations into and out of the compressor. Also non-steady combustion can be generated internally from combustion instability or self-induced oscillations. A premixed-prevaporized combustor would be particularly sensitive to flow transients because of its susceptability to flashback-autoignition and blowout. An experimental program, the Transient Flow Combustion Study is in progress to study the effects of air and fuel flow transients on a premixed-prevaporized combustor. Preliminary tests performed at an inlet air temperature of 600 K, a reference velocity of 30 m/s, and a pressure of 700 kPa. The airflow was reduced to 1/3 of its original value in a 40 ms ramp before flashback occurred. Ramping the airflow up has shown that blowout is more sensitive than flashback to flow transients. Blowout occurred with a 25 percent increase in airflow (at a constant fuel-air ratio) in a 20 ms ramp. Combustion resonance was found at some conditions and may be important in determining the effects of flow transients.

  5. Transient hardened power FETs

    Dawes, W.R. Jr.; Fischer, T.A.; Huang, C.C.C.; Meyer, W.J.; Smith, C.S.; Blanchard, R.A.; Fortier, T.J.

    1986-01-01

    N-channel power FETs offer significant advantages in power conditioning circuits. Similiarily to all MOS technologies, power FET devices are vulnerable to ionizing radiation, and are particularily susceptible to burn-out in high dose rate irradiations (>1E10 rads(Si)/sec.), which precludes their use in many military environments. This paper will summarize the physical mechanisms responsible for burn-out, and discuss various fabrication techniques designed to improve the transient hardness of power FETs. Power FET devices were fabricated with several of these techniques, and data will be presented which demonstrates that transient hardness levels in excess of 1E12 rads(Si)/sec. are easily achievable

  6. Transients in the Vivitron

    Cooke, C.M.; Frick, G.; Roumie, M.

    1993-01-01

    Electrical measurements are presented for the construction of a model for the study of transients in the Vivitron. Observation of the transmission of electrical pulses in the porticos clearly shows transmission-line behaviour. Measurements of the vector impedance of the outer porticos show the same transmission-line properties, but also gives a description of the modification from a pure transmission line due to the circular electrodes. The results of this investigation should allow the construction of a computer model which predicts the evolution of the transients in the case of a spark in the Vivitron. (orig.)

  7. Prismatic Core Coupled Transient Benchmark

    Ortensi, J.; Pope, M.A.; Strydom, G.; Sen, R.S.; DeHart, M.D.; Gougar, H.D.; Ellis, C.; Baxter, A.; Seker, V.; Downar, T.J.; Vierow, K.; Ivanov, K.

    2011-01-01

    The Prismatic Modular Reactor (PMR) is one of the High Temperature Reactor (HTR) design concepts that have existed for some time. Several prismatic units have operated in the world (DRAGON, Fort St. Vrain, Peach Bottom) and one unit is still in operation (HTTR). The deterministic neutronics and thermal-fluids transient analysis tools and methods currently available for the design and analysis of PMRs have lagged behind the state of the art compared to LWR reactor technologies. This has motivated the development of more accurate and efficient tools for the design and safety evaluations of the PMR. In addition to the work invested in new methods, it is essential to develop appropriate benchmarks to verify and validate the new methods in computer codes. The purpose of this benchmark is to establish a well-defined problem, based on a common given set of data, to compare methods and tools in core simulation and thermal hydraulics analysis with a specific focus on transient events. The benchmark-working group is currently seeking OECD/NEA sponsorship. This benchmark is being pursued and is heavily based on the success of the PBMR-400 exercise.

  8. Transient Heat Conduction

    Rode, Carsten

    1998-01-01

    Analytical theory of transient heat conduction.Fourier's law. General heat conducation equation. Thermal diffusivity. Biot and Fourier numbers. Lumped analysis and time constant. Semi-infinite body: fixed surface temperature, convective heat transfer at the surface, or constant surface heat flux...

  9. Transient cavitation in pipelines

    Kranenburg, C.

    1974-01-01

    The aim of the present study is to set up a one-dimensional mathematical model, which describes the transient flow in pipelines, taking into account the influence of cavitation and free gas. The flow will be conceived of as a three-phase flow of the liquid, its vapour and non-condensible gas. The

  10. Compressive Transient Imaging

    Sun, Qilin

    2017-04-01

    High resolution transient/3D imaging technology is of high interest in both scientific research and commercial application. Nowadays, all of the transient imaging methods suffer from low resolution or time consuming mechanical scanning. We proposed a new method based on TCSPC and Compressive Sensing to achieve a high resolution transient imaging with a several seconds capturing process. Picosecond laser sends a serious of equal interval pulse while synchronized SPAD camera\\'s detecting gate window has a precise phase delay at each cycle. After capturing enough points, we are able to make up a whole signal. By inserting a DMD device into the system, we are able to modulate all the frames of data using binary random patterns to reconstruct a super resolution transient/3D image later. Because the low fill factor of SPAD sensor will make a compressive sensing scenario ill-conditioned, We designed and fabricated a diffractive microlens array. We proposed a new CS reconstruction algorithm which is able to denoise at the same time for the measurements suffering from Poisson noise. Instead of a single SPAD senor, we chose a SPAD array because it can drastically reduce the requirement for the number of measurements and its reconstruction time. Further more, it not easy to reconstruct a high resolution image with only one single sensor while for an array, it just needs to reconstruct small patches and a few measurements. In this thesis, we evaluated the reconstruction methods using both clean measurements and the version corrupted by Poisson noise. The results show how the integration over the layers influence the image quality and our algorithm works well while the measurements suffer from non-trival Poisson noise. It\\'s a breakthrough in the areas of both transient imaging and compressive sensing.

  11. Searching for MHz Transients with the VLA Low-band Ionosphere and Transient Experiment (VLITE)

    Polisensky, Emil; Peters, Wendy; Giacintucci, Simona; Clarke, Tracy; Kassim, Namir E.; hyman, Scott D.; van der Horst, Alexander; Linford, Justin; Waldron, Zach; Frail, Dale

    2018-01-01

    NRL and NRAO have expanded the low frequency capabilities of the VLA through the VLA Low-band Ionosphere and Transient Experiment (VLITE, http://vlite.nrao.edu/ ), effectively making the instrument two telescopes in one. VLITE is a commensal observing system that harvests data from the prime focus in parallel with normal Cassegrain focus observing on a subset of VLA antennas. VLITE provides over 6000 observing hours per year in a > 5 square degree field-of-view using 64 MHz bandwidth centered on 352 MHz. By operating in parallel, VLITE offers invaluable low frequency data to targeted observations of transient sources detected at higher frequencies. With arcsec resolution and mJy sensitivity, VLITE additionally offers great potential for blind searches of rarer radio-selected transients. We use catalog matching software on the imaging products from the daily astrophysics pipeline and the LOFAR Transients Pipeline (TraP) on repeated observations of the same fields to search for coherent and incoherent astronomical transients on timescales of a few seconds to years. We present the current status of the VLITE transient science program from its initial deployment on 10 antennas in November 2014 through its expansion to 16 antennas in the summer of 2017. Transient limits from VLITE’s first year of operation (Polisensky et al. 2016) are updated per the most recent analysis.

  12. Investigation on Capacitor Switching Transient Limiter with a Three phase Variable Resistance

    Naderi, Seyed Behzad; Jafari, Mehdi; Zandnia, Amir

    2017-01-01

    In this paper, a capacitor switching transient limiter based on a three phase variable resistance is proposed. The proposed structure eliminates the capacitor switching transient current and over-voltage by introducing a variable resistance to the current path with its special switching pattern...... transients on capacitor after bypassing. Analytic Analyses for this structure in transient cases are presented in details and simulations are performed by MATLAB software to prove its effectiveness....

  13. Transient osteoporosis of hip

    Mahesh M Choudhary

    2015-01-01

    Full Text Available We report a case of transient osteoporosis of the hip (TOH in a 50-year-old man including the clinical presentation, diagnostic studies, management, and clinical progress. TOH is a rare self-limiting condition that typically affects middle-aged men or, less frequently, women in the third trimester of pregnancy. Affected individuals present clinically with acute hip pain, limping gait, and limited ranges of hip motion. TOH may begin spontaneously or after a minor trauma. Radiographs are typically unremarkable but magnetic resonance (MR imaging studies yield findings consistent with bone marrow edema. TOH is referred to as regional migratory osteoporosis (RMO if it travels to other joints or the contralateral hip. TOH often resembles osteonecrosis but the two conditions must be differentiated due to different prognoses and management approaches. The term TOH is often used interchangeably and synonymously with transient bone marrow edema (TBME.

  14. Modeling of environmentally induced transients within satellites

    Stevens, N. John; Barbay, Gordon J.; Jones, Michael R.; Viswanathan, R.

    1987-01-01

    A technique is described that allows an estimation of possible spacecraft charging hazards. This technique, called SCREENS (spacecraft response to environments of space), utilizes the NASA charging analyzer program (NASCAP) to estimate the electrical stress locations and the charge stored in the dielectric coatings due to spacecraft encounter with a geomagnetic substorm environment. This information can then be used to determine the response of the spacecraft electrical system to a surface discharge by means of lumped element models. The coupling into the electronics is assumed to be due to magnetic linkage from the transient currents flowing as a result of the discharge transient. The behavior of a spinning spacecraft encountering a severe substorm is predicted using this technique. It is found that systems are potentially vulnerable to upset if transient signals enter through the ground lines.

  15. Positron beam studies of transients in semiconductors

    Beling, C.D.; Ling, C.C.; Cheung, C.K.; Naik, P.S.; Zhang, J.D.; Fung, S.

    2006-01-01

    Vacancy-sensing positron deep level transient spectroscopy (PDLTS) is a positron beam-based technique that seeks to provide information on the electronic ionization levels of vacancy defects probed by the positron through the monitoring of thermal transients. The experimental discoveries leading to the concept of vacancy-sensing PDLTS are first reviewed. The major problem associated with this technique is discussed, namely the strong electric fields establish in the near surface region of the sample during the thermal transient which tend to sweep positrons into the contact with negligible defect trapping. New simulations are presented which suggest that under certain conditions a sufficient fraction of positrons may be trapped into ionizing defects rendering PDLTS technique workable. Some suggestions are made for techniques that might avoid the problematic electric field problem, such as optical-PDLTS where deep levels are populated using light and the use of high forward bias currents for trap filling

  16. Characterization of electrical appliances in transient state

    Wójcik, Augustyn; Winiecki, Wiesław

    2017-08-01

    The article contains the study about electrical appliance characterization on the basis of power grid signals. To represent devices, parameters of current and voltage signals recorded during transient states are used. In this paper only transients occurring as a result of switching on devices are considered. The way of data acquisition performed in specialized measurement setup developed for electricity load monitoring is described. The paper presents the method of transients detection and the method of appliance parameters calculation. Using the set of acquired measurement data and appropriate software the set of parameters for several household appliances operating in different operating conditions was processed. Usefulness of appliances characterization in Non-Intrusive Appliance Load Monitoring System (NIALMS) with the use of proposed method is discussed focusing on obtained results.

  17. Stability of Ignition Transients

    V.E. Zarko

    1991-01-01

    The problem of ignition stability arises in the case of the action of intense external heat stimuli when, resulting from the cut-off of solid substance heating, momentary ignition is followed by extinction. Physical pattern of solid propellant ignition is considered and ignition criteria available in the literature are discussed. It is shown that the above mentioned problem amounts to transient burning at a given arbitrary temperature distribution in the condensed phase. A brief survey...

  18. Heavy Ion Transient Characterization of a Photobit Hardened-by-Design Active Pixel Sensor Array

    Marshall, Paul W.; Byers, Wheaton B.; Conger, Christopher; Eid, El-Sayed; Gee, George; Jones, Michael R.; Marshall, Cheryl J.; Reed, Robert; Pickel, Jim; Kniffin, Scott

    2002-01-01

    This paper presents heavy ion data on the single event transient (SET) response of a Photobit active pixel sensor (APS) four quadrant test chip with different radiation tolerant designs in a standard 0.35 micron CMOS process. The physical design techniques of enclosed geometry and P-channel guard rings are used to design the four N-type active photodiode pixels as described in a previous paper. Argon transient measurements on the 256 x 256 chip array as a function of incident angle show a significant variation in the amount of charge collected as well as the charge spreading dependent on the pixel type. The results are correlated with processing and design information provided by Photobit. In addition, there is a large degree of statistical variability between individual ion strikes. No latch-up is observed up to an LET of 106 MeV/mg/sq cm.

  19. MHD aspects of coronal transients

    Anzer, U.

    1979-10-01

    If one defines coronal transients as events which occur in the solar corona on rapid time scales (< approx. several hours) then one would have to include a large variety of solar phenomena: flares, sprays, erupting prominences, X-ray transients, white light transients, etc. Here we shall focus our attention on the latter two phenomena. (orig.) 891 WL/orig. 892 RDG

  20. Transient particle emission measurement with optical techniques

    Bermúdez, Vicente; Luján, José M.; Serrano, José R.; Pla, Benjamín

    2008-06-01

    Particulate matter is responsible for some respiratory and cardiovascular diseases. In addition, it is one of the most important pollutants of high-speed direct injection (HSDI) passenger car engines. Current legislation requires particulate dilution tunnels for particulate matter measuring. However for development work, dilution tunnels are expensive and sometimes not useful since they are not able to quantify real-time particulate emissions during transient operation. In this study, the use of a continuous measurement opacimeter and a fast response HFID is proven to be a good alternative to obtain instantaneous particle mass emissions during transient operation (due to particulate matter consisting mainly of soot and SOF). Some methods and correlations available from literature, but developed for steady conditions, are evaluated during transient operation by comparing with mini-tunnel measurements during the entire MVEG-A transient cycle. A new correlation was also derived from this evaluation. Results for soot and SOF (obtained from the new correlation proposed) are compared with soot and SOF captured with particulate filters, which have been separated by means of an SOF extraction method. Finally, as an example of ECU design strategies using these sort of correlations, the EGR valve opening is optimized during transient operation. The optimization is performed while simultaneously taking into account instantaneous fuel consumption, particulate emissions (calculated with the proposed correlation) and other regulated engine pollutants.

  1. Magnetic transients in flares

    Zirin, H.; Tanaka, K.

    1981-01-01

    We present data on magnetic transients (mgtr's) observed in flares on 1980 July 1 and 5 with Big Bear videomagnetograph (VMG). The 1980 July 1 event was a white light flare in which a strong bipolar mgtr was observed, and a definite change in the sunspots occurred at the time of the flare. In the 1980 July 5 flare, a mgtr was observed in only one polarity, and, although no sunspot changes occurred simultaneous with the flare, major spot changes occurred in a period of hours

  2. Familial Transient Global Amnesia

    R.Rhys Davies

    2012-12-01

    Full Text Available Following an episode of typical transient global amnesia (TGA, a female patient reported similar clinical attacks in 2 maternal aunts. Prior reports of familial TGA are few, and no previous account of affected relatives more distant than siblings or parents was discovered in a literature survey. The aetiology of familial TGA is unknown. A pathophysiological mechanism akin to that in migraine attacks, comorbidity reported in a number of the examples of familial TGA, is one possibility. The study of familial TGA cases might facilitate the understanding of TGA aetiology.

  3. Advanced hybrid transient stability and EMT simulation for VSC-HVDC systems

    Van Der Meer, A.A.; Gibescu, M.; Van Der Meijden, M.A.M.M.; Kling, W.L.; Ferreira, J.A.

    2015-01-01

    This paper deals with advanced hybrid transient stability and electromagnetic-transient (EMT) simulation of combined ac/dc power systems containing large amounts of renewable energy sources interfaced through voltage-source converter-high-voltage direct current (VSC-HVDC). The concerning transient

  4. Measurand transient signal suppressor

    Bozeman, Richard J., Jr. (Inventor)

    1994-01-01

    A transient signal suppressor for use in a controls system which is adapted to respond to a change in a physical parameter whenever it crosses a predetermined threshold value in a selected direction of increasing or decreasing values with respect to the threshold value and is sustained for a selected discrete time interval is presented. The suppressor includes a sensor transducer for sensing the physical parameter and generating an electrical input signal whenever the sensed physical parameter crosses the threshold level in the selected direction. A manually operated switch is provided for adapting the suppressor to produce an output drive signal whenever the physical parameter crosses the threshold value in the selected direction of increasing or decreasing values. A time delay circuit is selectively adjustable for suppressing the transducer input signal for a preselected one of a plurality of available discrete suppression time and producing an output signal only if the input signal is sustained for a time greater than the selected suppression time. An electronic gate is coupled to receive the transducer input signal and the timer output signal and produce an output drive signal for energizing a control relay whenever the transducer input is a non-transient signal which is sustained beyond the selected time interval.

  5. Transient regional osteoporosis

    F. Trotta

    2011-09-01

    Full Text Available Transient osteoporosis of the hip and regional migratory osteoporosis are uncommon and probably underdiagnosed bone diseases characterized by pain and functional limitation mainly affecting weight-bearing joints of the lower limbs. These conditions are usually self-limiting and symptoms tend to abate within a few months without sequelae. Routine laboratory investigations are unremarkable. Middle aged men and women during the last months of pregnancy or in the immediate post-partum period are principally affected. Osteopenia with preservation of articular space and transitory edema of the bone marrow provided by magnetic resonance imaging are common to these two conditions, so they are also known by the term regional transitory osteoporosis. The appearance of bone marrow edema is not specific to regional transitory osteoporosis but can be observed in several diseases, i.e. trauma, reflex sympathetic dystrophy, avascular osteonecrosis, infections, tumors from which it must be differentiated. The etiology of this condition is unknown. Pathogenesis is still debated in particular the relationship with reflex sympathetic dystrophy, with which regional transitory osteoporosis is often identified. The purpose of the present review is to remark on the relationship between transient osteoporosis of the hip and regional migratory osteoporosis with particular attention to the bone marrow edema pattern and relative differential diagnosis.

  6. SPICE modelling of the transient response of irradiated MOSFETs; Modelisation de la reponse transitoire de MOSFETs irradies avec SPICE

    Pouget, V.; Lapuyade, H.; Lewis, D.; Deval, Y.; Fouillat, P. [Bordeaux-1 Univ., IXL, 33 - Talence (France); Sarger, L. [Bordeaux-1 Univ., CPMOH, 33 - Talence (France)

    1999-07-01

    A new SPICE model of irradiated MOSFET taking into account the real response of the 4 electrodes is proposed. The component that has been simulated is an NMOS transistor issued from the AMS BiCMOS 0.8 {mu}m technology. A comparison between SPICE-generated transients and PISCES device simulation demonstrates the accuracy benefits when used in complex electronic architectures. This model could be used when designing electronic circuits able to sustain hardening due to SEE (single event effect), it will be an efficient complement to the physical simulations.

  7. The joy of transient chaos

    Tél, Tamás [Institute for Theoretical Physics, Eötvös University, and MTA-ELTE Theoretical Physics Research Group, Pázmány P. s. 1/A, Budapest H-1117 (Hungary)

    2015-09-15

    We intend to show that transient chaos is a very appealing, but still not widely appreciated, subfield of nonlinear dynamics. Besides flashing its basic properties and giving a brief overview of the many applications, a few recent transient-chaos-related subjects are introduced in some detail. These include the dynamics of decision making, dispersion, and sedimentation of volcanic ash, doubly transient chaos of undriven autonomous mechanical systems, and a dynamical systems approach to energy absorption or explosion.

  8. Transient osteoporosis of the hip

    McWalter, Patricia; Hassan Ahmed

    2007-01-01

    Transient osteoporosis of the hip is an uncommon cause of hip pain, mostly affecting healthy middle-aged men and also women in the third trimester of pregnancy. We present a case of transient osteoporosis of the hip in a 33-year-old non-pregnant female patient. This case highlights the importance of considering a diagnosis of transient osteoporosis of the hip in patients who present with hip pain. (author)

  9. The ZTF Bright Transient Survey

    Fremling, C.; Sharma, Y.; Kulkarni, S. R.; Miller, A. A.; Taggart, K.; Perley, D. A.; Gooba, A.

    2018-06-01

    As a supplement to the Zwicky Transient Facility (ZTF; ATel #11266) public alerts (ATel #11685) we plan to report (following ATel #11615) bright probable supernovae identified in the raw alert stream from the ZTF Northern Sky Survey ("Celestial Cinematography"; see Bellm & Kulkarni, 2017, Nature Astronomy 1, 71) to the Transient Name Server (https://wis-tns.weizmann.ac.il) on a daily basis; the ZTF Bright Transient Survey (BTS; see Kulkarni et al., 2018; arXiv:1710.04223).

  10. The joy of transient chaos.

    Tél, Tamás

    2015-09-01

    We intend to show that transient chaos is a very appealing, but still not widely appreciated, subfield of nonlinear dynamics. Besides flashing its basic properties and giving a brief overview of the many applications, a few recent transient-chaos-related subjects are introduced in some detail. These include the dynamics of decision making, dispersion, and sedimentation of volcanic ash, doubly transient chaos of undriven autonomous mechanical systems, and a dynamical systems approach to energy absorption or explosion.

  11. Transient Infrared Emission Spectroscopy

    Jones, Roger W.; McClelland, John F.

    1989-12-01

    Transient Infrared Emission Spectroscopy (TIRES) is a new technique that reduces the occurrence of self-absorption in optically thick solid samples so that analytically useful emission spectra may be observed. Conventional emission spectroscopy, in which the sample is held at an elevated, uniform temperature, is practical only for optically thin samples. In thick samples the emission from deep layers of the material is partially absorbed by overlying layers.1 This self-absorption results in emission spectra from most optically thick samples that closely resemble black-body spectra. The characteristic discrete emission bands are severely truncated and altered in shape. TIRES bypasses this difficulty by using a laser to heat only an optically thin surface layer. The increased temperature of the layer is transient since the layer will rapidly cool and thicken by thermal diffusion; hence the emission collection must be correlated with the laser heating. TIRES may be done with both pulsed and cw lasers.2,3 When a pulsed laser is used, the spectrometer sampling must be synchronized with the laser pulsing so that only emission during and immediately after each laser pulse is observed.3 If a cw laser is used, the sample must move rapidly through the beam. The hot, transient layer is then in the beam track on the sample at and immediately behind the beam position, so the spectrometer field of view must be limited to this region near the beam position.2 How much self-absorption the observed emission suffers depends on how thick the heated layer has grown by thermal diffusion when the spectrometer samples the emission. Use of a pulsed laser synchronized with the spectrometer sampling readily permits reduction of the time available for heat diffusion to about 100 acs .3 When a cw laser is used, the heat-diffusion time is controlled by how small the spectrometer field of view is and by how rapidly the sample moves past within this field. Both a very small field of view and a

  12. Modeling transient radiation effects in power MOSFETS

    Hoffman, J.R.; Hall, W.E.; Dunn, D.E.

    1987-01-01

    Using standard device specifications and simple assumptions, the transient radiation response of VDMOS MOSFETs can be modeled in a standard circuit analysis program. The device model consists of a body diode, a parasitic bipolar transistor, and elements to simulate high-current reduced breakdown. The attached photocurrent model emulates response to any pulse shape and accounts for bias-dependent depletion regions. The model can be optimized to best fit available test data

  13. Removing fuelling transient using neutron absorbers

    Paquette, S.; Chan, P.K.; Bonin, H.W., E-mail: Stephane.Paquette@rmc.ca [Royal Military College of Canada, Chemistry and Chemical Engineering Dept., Kingston, Ontario (Canada); Pant, A. [Cameco Fuel Manufacturing, Port Hope, Ontario (Canada)

    2012-07-01

    Preliminary criticality and burnup calculation results indicate that by employing a small amount of neutron absorber the fuelling transient, currently occurring in a CANDU 37-element fuel bundle, can be significantly reduced. A parametric study using the Los Alamos National Laboratories' MCNP 5 code and Atomic Energy of Canada Limited's WIMS-AECL 3.1 is presented in this paper. (author)

  14. Some new directions in system transient simulation

    Ransom, V.H.

    1986-01-01

    The current research in system transient simulation at the Idaho National Engineering Laboratory (INEL) is summarized in this paper and three new directions that are emerging from this work are discussed. The new directions are: development of an Advanced Thermal Hydraulic Energy Network Analyzer (ATHENA) having new modeling capability, use of expert systems for enhancing simulation methods, and the trend to individual workstations for simulation

  15. High energy transients: The millisecond domain

    Rao, A. R.

    2018-02-01

    The search for high energy transients in the millisecond domain has come to the focus in recent times due to the detection of gravitational wave events and the identification of fast radio bursts as cosmological sources. Here we highlight the sensitivity limitations in the currently operating hard X-ray telescopes and give some details of the search for millisecond events in the AstroSat CZT Imager data.

  16. Anticipated transients without scram

    Lellouche, G.S.

    1980-01-01

    This article discusses in various degrees of depth the publications WASH-1270, WASH-1400, and NUREG-0460, and has as its purpose a description of the technical work done by Electric Power Research Institute (EPRI) personnel and its contractors on the subject of anticipated transients without scram (ATWS). It demonstrates the close relation between the probability of scram failure derived from historical scram data and that derived from the use of component data in a model of a system (the so-called synthesis method), such as was done in WASH-1400. The inherent conservatism of these models is demonstrated by showing that they predict significantly more events than have in fact occurred and that such models still predict scram failure probabilities low enough to make ATWS an insignificant contributor to accident risk

  17. Transient fuel melting

    Roche, L.; Schmitz, F.

    1982-10-01

    The observation of micrographic documents from fuel after a CABRI test leads to postulate a specific mode of transient fuel melting during a rapid nuclear power excursion. When reaching the melt threshold, the bands which are characteristic for the solid state are broken statistically over a macroscopic region. The time of maintaining the fuel at the critical enthalpy level between solid and liquid is too short to lead to a phase separation. A significant life-time (approximately 1 second) of this intermediate ''unsolide'' state would have consequences on the variation of physical properties linked to the phase transition solid/liquid: viscosity, specific volume and (for the irradiated fuel) fission gas release [fr

  18. Relationship between single-event upset immunity and fabrication processes of recent memories; Relations entre l'immunite au SEU et les procedes de fabrication de memoires recentes

    Nemoto, N.; Shindou, H.; Kuboyama, S.; Matsuda, S. [National Space Development Agency of Japan, Ibaraki-ken (Japan); Itoh, H.; Okada, S.; Nashiyama, I. [Japan Atomic Energy Research Inst., Takasaki, Gunma (Japan)

    1999-07-01

    Single-Event upset (SEU) immunity for commercial devices were evaluated by irradiation tests using high-energy heavy ions. We show test results and describe the relationship between observed SEU and structures/fabrication processes. We have evaluated single-even upset (SEU) tolerance of recent commercial memory devices using high energy heavy ions in order to find relationship between SEU rate and their fabrication process. It was revealed that the change of the process parameter gives much effect for the SEU rate of the devices. (authors)

  19. Transient Go: A Mobile App for Transient Astronomy Outreach

    Crichton, D.; Mahabal, A.; Djorgovski, S. G.; Drake, A.; Early, J.; Ivezic, Z.; Jacoby, S.; Kanbur, S.

    2016-12-01

    Augmented Reality (AR) is set to revolutionize human interaction with the real world as demonstrated by the phenomenal success of `Pokemon Go'. That very technology can be used to rekindle the interest in science at the school level. We are in the process of developing a prototype app based on sky maps that will use AR to introduce different classes of astronomical transients to students as they are discovered i.e. in real-time. This will involve transient streams from surveys such as the Catalina Real-time Transient Survey (CRTS) today and the Large Synoptic Survey Telescope (LSST) in the near future. The transient streams will be combined with archival and latest image cut-outs and other auxiliary data as well as historical and statistical perspectives on each of the transient types being served. Such an app could easily be adapted to work with various NASA missions and NSF projects to enrich the student experience.

  20. A FRAMEWORK FOR INTERPRETING FAST RADIO TRANSIENTS SEARCH EXPERIMENTS: APPLICATION TO THE V-FASTR EXPERIMENT

    Trott, Cathryn M.; Tingay, Steven J.; Wayth, Randall B.; Macquart, Jean-Pierre R.; Palaniswamy, Divya; Thompson, David R.; Wagstaff, Kiri L.; Majid, Walid A.; Burke-Spolaor, Sarah; Deller, Adam T.; Brisken, Walter F.

    2013-01-01

    We define a framework for determining constraints on the detection rate of fast transient events from a population of underlying sources, with a view to incorporate beam shape, frequency effects, scattering effects, and detection efficiency into the metric. We then demonstrate a method for combining independent data sets into a single event rate constraint diagram, using a probabilistic approach to the limits on parameter space. We apply this new framework to present the latest results from the V-FASTR experiment, a commensal fast transients search using the Very Long Baseline Array (VLBA). In the 20 cm band, V-FASTR now has the ability to probe the regions of parameter space of importance for the observed Lorimer and Keane fast radio transient candidates by combining the information from observations with differing bandwidths, and properly accounting for the source dispersion measure, VLBA antenna beam shape, experiment time sampling, and stochastic nature of events. We then apply the framework to combine the results of the V-FASTR and Allen Telescope Array Fly's Eye experiments, demonstrating their complementarity. Expectations for fast transients experiments for the SKA Phase I dish array are then computed, and the impact of large differential bandwidths is discussed.

  1. Twenty-five years of transient counting experience in French PWR units

    Barthelet, B. [Electricite de France (EDF DPN), 93 - Saint-Denis (France); Savoldelli, D.; Fritz, R. [Electricite de France (EDF DPN), 93 - Noisy le Grand (France)

    2001-07-01

    For nearly twenty five years, EDF has been checking that the actual operating transients are neither more severe nor more numerous than the design basis transients. This activity of transient cycle counting and bookkeeping has enabled EDF to own a database of more than 800 reactor.years for the PWR units. The current method of transient cycle counting is presented. In the paper, we will point out the main results of transient cycle counting and lessons learned. In general, the frequencies of transients are lower than the design frequencies. In few cases, they are higher, such as the transient frequencies of the RCS lines connected to auxiliary systems often due to operating procedures or particular periodic testing. Few periodic tests were not taken into account in the design basis transient file ; they have been detected thanks to the transient cycle counting. In the last 1980's, we achieved the first updating of the design basis transient file for the PWR 900 MWe series. In the early 1990's, we updated the design basis transient file of the PWR 1300 MWe series. In fact, since design and start-up, the operating conditions have been modified (fuel cycle with stretch-out, modification of the hot leg and cold leg temperatures for the PWR 1300 MWe,...). This was the cause of many unclassified transients. In the new design basis transient file, we have created new transients and increased the frequencies of some of them. This has enabled to consider the updated design basis transient file more representative of actual operating transients. For some years, we have increasingly associated the operators with the transient cycle counting concern. We noticed progress (decreased frequencies of most transients). (authors)

  2. Twenty-five years of transient counting experience in French PWR units

    Barthelet, B.; Savoldelli, D.; Fritz, R.

    2001-01-01

    For nearly twenty five years, EDF has been checking that the actual operating transients are neither more severe nor more numerous than the design basis transients. This activity of transient cycle counting and bookkeeping has enabled EDF to own a database of more than 800 reactor.years for the PWR units. The current method of transient cycle counting is presented. In the paper, we will point out the main results of transient cycle counting and lessons learned. In general, the frequencies of transients are lower than the design frequencies. In few cases, they are higher, such as the transient frequencies of the RCS lines connected to auxiliary systems often due to operating procedures or particular periodic testing. Few periodic tests were not taken into account in the design basis transient file ; they have been detected thanks to the transient cycle counting. In the last 1980's, we achieved the first updating of the design basis transient file for the PWR 900 MWe series. In the early 1990's, we updated the design basis transient file of the PWR 1300 MWe series. In fact, since design and start-up, the operating conditions have been modified (fuel cycle with stretch-out, modification of the hot leg and cold leg temperatures for the PWR 1300 MWe,...). This was the cause of many unclassified transients. In the new design basis transient file, we have created new transients and increased the frequencies of some of them. This has enabled to consider the updated design basis transient file more representative of actual operating transients. For some years, we have increasingly associated the operators with the transient cycle counting concern. We noticed progress (decreased frequencies of most transients). (authors)

  3. Pressure transients in pipeline systems

    Voigt, Kristian

    1998-01-01

    This text is to give an overview of the necessary background to do investigation of pressure transients via simulations. It will describe briefly the Method of Characteristics which is the defacto standard for simulating pressure transients. Much of the text has been adopted from the book Pressur...

  4. Transients and burn dynamics in advanced tokamak fusion reactors

    Mantsinen, M.J.; Salomaa, R.R.E.

    1994-01-01

    Transient behavior of D 3 He-tokamak reactors is investigated numerically using a zero-dimensional code with prescribed profiles. Pure D 3 He start-up is compared to DT-assisted and DT-ignited start-ups. We have considered two categories of transients which could extinguish steady fusion burn: fuelling interruptions and sudden confinement changes similar to the L → H transients occurring in present-day tokamaks. Shutdown with various current and density ramp-down scenarios are studied, too. (author)

  5. Analyser for fast single events; Analyseur d'evenements rapides simples; Analizator bystrykh odnokratnykh yavlenij; Analizador de sucesos rapidos no recurrentes

    Sedlmeyer, J W; Patten, R B; Fussell, L Jr [Edgerton, Germeshausen And Grier, Inc., Las Vegas, NV (United States)

    1962-04-15

    An electronic analyser has been designed and constructed for use with single non-recurring transient signals. The signal, during passage along a coaxial line, is sampled instantaneously at a number of tap-off points, by means of a single short-duration gate pulse. Multipoint time-dissection is accomplished using a gate-duration and a time-interval between samples, which are independently adjustable from about 4 ns. The time-intervals may be programmed in non-linear array, and jitter is less than 0.5 ns. The speed of response is at present limited by diode characteristics. Each sampled voltage is stretched in a circuit which retains the voltage amplitude. A time-stretch by a factor of 10{sup 8} has been realized, with good stability. These data points may be commutated and transmitted over open-wire to low-frequency recording systems ; they may be converted to digital form for rapid data-processing, using conventional equipment; and/or they may be presented visually. The analyser is advantageous, compared with high-speed oscilloscopy, when large numbers of single-transients require individual analysis; such requirements exist for investigations into fluctuations in the response of systems, or for production-testing of components. The analyser is advantageous when the data-analysis must be accomplished quickly after the signal event occurs; it is not necessary to develop films or to read them. The analyser is also advantageous when the analysis-computation centre is located remotely from the event. Applications of this technique in the nuclear field are many. Fluctuation studies of reactors and subcritical assemblies may be carried out rapidly by pulsed neutron techniques. The build-up and decay characteristics of detectors may be determined, together with analysis of statistics and fluctuations. The pulse shape of the radiation wave from nuclear accelerators may be measured. Neutron-spectrometry using the time-of-flight method may be facilitated. Isomeric studies

  6. Belt conveyor dynamics in transient operation for speed control

    He, D.; Pang, Y.; Lodewijks, G.

    2016-01-01

    Belt conveyors play an important role in continuous dry bulk material transport, especially at the mining industry. Speed control is expected to reduce the energy consumption of belt conveyors. Transient operation is the operation of increasing or decreasing conveyor speed for speed control. According to literature review, current research rarely takes the conveyor dynamics in transient operation into account. However, in belt conveyor speed control, the conveyor dynamic behaviors are signifi...

  7. Transient regional osteoporosis.

    Cano-Marquina, Antonio; Tarín, Juan J; García-Pérez, Miguel-Ángel; Cano, Antonio

    2014-04-01

    Transient regional osteoporosis (TRO) is a disease that predisposes to fragility fracture in weight bearing joints of mid-life women and men. Pregnant women may also suffer the process, usually at the hip. The prevalence of TRO is lower than the systemic form, associated with postmenopause and advanced age, but may be falsely diminished by under-diagnosis. The disease may be uni- or bilateral, and may migrate to distinct joints. One main feature of TRO is spontaneous recovery. Pain and progressive limitation in the functionality of the affected joint(s) are key symptoms. In the case of the form associated with pregnancy, difficulties in diagnosis derive from the relatively young age at presentation and from the clinical overlapping with the frequent aches during gestation. Densitometric osteoporosis in the affected region is not always present, but bone marrow edema, with or without joint effusion, is detected by magnetic resonance. There are not treatment guidelines, but the association of antiresorptives to symptomatic treatment seems to be beneficial. Surgery or other orthopedic interventions can be required for specific indications, like hip fracture, intra-medullary decompression, or other. Copyright © 2014 Elsevier Ireland Ltd. All rights reserved.

  8. Applied hydraulic transients

    Chaudhry, M Hanif

    2014-01-01

    This book covers hydraulic transients in a comprehensive and systematic manner from introduction to advanced level and presents various methods of analysis for computer solution. The field of application of the book is very broad and diverse and covers areas such as hydroelectric projects, pumped storage schemes, water-supply systems, cooling-water systems, oil pipelines and industrial piping systems. Strong emphasis is given to practical applications, including several case studies, problems of applied nature, and design criteria. This will help design engineers and introduce students to real-life projects. This book also: ·         Presents modern methods of analysis suitable for computer analysis, such as the method of characteristics, explicit and implicit finite-difference methods and matrix methods ·         Includes case studies of actual projects ·         Provides extensive and complete treatment of governed hydraulic turbines ·         Presents design charts, desi...

  9. The transient transpiration heat flux meter

    Martins, N.; Calisto, H.; Afgan, N.; Leontiev, A.I.

    2006-01-01

    A new heat flux measurement principle, based on the transient response of a transpiration radiometer, is proposed. The measurement principle of current transpiration radiometers is based on a steady-state temperature measurement in a porous element. Since it may typically take several seconds to reach these conditions, there are obvious benefits in reducing the instrument response time. This can be achieved through the analysis of its transient response in order to predict the incident heat flux. In addition, the proposed methodology enables the separate measurement of the radiative and convective components of incident heat fluxes, without compromising the known advantages of transpiration radiometers. The availability of such an instrument may enable the development of advanced monitoring, diagnostic and control systems for thermal equipment

  10. Work plan: transient release from LMFBR fuel

    Kress, T.S.; Parker, G.W.; Fontana, M.H.

    1975-09-01

    The proposed LMFBR Transient Release Program at ORNL is designed to investigate, by means of ex-reactor experiments and analytical modeling, the release and transport of fuel, fission products, and transuranic elements from fast reactor cores in the event of certain hypothetical accidents. It is desired to experimentally produce energy depositions that are characteristic of severe hypothetical reactor transients by the application of direct electrical current to mixed-oxide fuels under sodium. The experimental program includes tests with and without sodium, investigations of alternative methods of generating fuel and sodium aerosols, the use of UO 2 as a fuel simulant, additions of tracers as fission product simulants, effects of radiation, and under-water and under-sodium efforts to study the behavior of the vapor bubble itself. Analytical modeling will accompany all phases of the program, and the data will be correlated with models developed. 21 references. (auth)

  11. Transient accelerating scalar models with exponential potentials

    Cui Wen-Ping; Zhang Yang; Fu Zheng-Wen

    2013-01-01

    We study a known class of scalar dark energy models in which the potential has an exponential term and the current accelerating era is transient. We find that, although a decelerating era will return in the future, when extrapolating the model back to earlier stages (z ≳ 4), scalar dark energy becomes dominant over matter. So these models do not have the desired tracking behavior, and the predicted transient period of acceleration cannot be adopted into the standard scenario of the Big Bang cosmology. When couplings between the scalar field and matter are introduced, the models still have the same problem; only the time when deceleration returns will be varied. To achieve re-deceleration, one has to turn to alternative models that are consistent with the standard Big Bang scenario.

  12. Explosive and radio-selected Transients: Transient Astronomy with ...

    40

    sitive measurements will lead to very accurate mass loss estimation in these supernovae. .... transients are powerful probes of intervening media owing to dispersion ...... A., & Chandra, P. 2011, Nature Communications,. 2, 175. Chakraborti, S.

  13. Transient-Switch-Signal Suppressor

    Bozeman, Richard J., Jr.

    1995-01-01

    Circuit delays transmission of switch-opening or switch-closing signal until after preset suppression time. Used to prevent transmission of undesired momentary switch signal. Basic mode of operation simple. Beginning of switch signal initiates timing sequence. If switch signal persists after preset suppression time, circuit transmits switch signal to external circuitry. If switch signal no longer present after suppression time, switch signal deemed transient, and circuit does not pass signal on to external circuitry, as though no transient switch signal. Suppression time preset at value large enough to allow for damping of underlying pressure wave or other mechanical transient.

  14. Electromagnetic transients in power cables

    da Silva, Filipe Faria

    2013-01-01

    From the more basic concepts to the most advanced ones where long and laborious simulation models are required, Electromagnetic Transients in Power Cables provides a thorough insight into the study of electromagnetic transients and underground power cables. Explanations and demonstrations of different electromagnetic transient phenomena are provided, from simple lumped-parameter circuits to complex cable-based high voltage networks, as well as instructions on how to model the cables.Supported throughout by illustrations, circuit diagrams and simulation results, each chapter contains exercises,

  15. Transients in reactors for power systems compensation

    Abdul Hamid, Haziah

    This thesis describes new models and investigations into switching transient phenomena related to the shunt reactors and the Mechanically Switched Capacitor with Damping Network (MSCDN) operations used for reactive power control in the transmission system. Shunt reactors and MSCDN are similar in that they have reactors. A shunt reactor is connected parallel to the compensated lines to absorb the leading current, whereas the MSCDN is a version of a capacitor bank designed as a C-type filter for use in the harmonic-rich environment. In this work, models have been developed and transient overvoltages due to shunt reactor deenergisation were estimated analytically using MathCad, a mathematical program. Computer simulations used the ATP/EMTP program to reproduce both single-phase and three-phase shunt reactor switching at 275 kV operational substations. The effect of the reactor switching on the circuit breaker grading capacitor was also examined by considering various switching conditions.. The main original achievement of this thesis is the clarification of failure mechanisms occurring in the air-core filter reactor due to MSCDN switching operations. The simulation of the MSCDN energisation was conducted using the ATP/EMTP program in the presence of surge arresters. The outcome of this simulation shows that extremely fast transients were established across the air-core filter reactor. This identified transient event has led to the development of a detailed air-core reactor model, which accounts for the inter-turn RLC parameters as well as the stray capacitances-to-ground. These parameters are incorporated into the transient simulation circuit, from which the current and voltage distribution across the winding were derived using electric field and equivalent circuit modelling. Analysis of the results has revealed that there are substantial dielectric stresses imposed on the winding insulation that can be attributed to a combination of three factors. (i) First, the

  16. Scanning ion deep level transient spectroscopy: I. Theory

    Laird, J S; Jagadish, C; Jamieson, D N; Legge, G J F

    2006-01-01

    Theoretical aspects of a new technique for the MeV ion microbeam are described in detail for the first time. The basis of the technique, termed scanning ion deep level transient spectroscopy (SIDLTS), is the imaging of defect distributions within semiconductor devices. The principles of SIDLTS are similar to those behind other deep level transient spectroscopy (DLTS) techniques with the main difference stemming from the injection of carriers into traps using the localized energy-loss of a focused MeV ion beam. Energy-loss of an MeV ion generates an electron-hole pair plasma, providing the equivalent of a DLTS trap filling pulse with a duration which depends on space-charge screening of the applied electric field and ambipolar erosion of the plasma for short ranging ions. Some nanoseconds later, the detrapping current transient is monitored as a charge transient. Scanning the beam in conjunction with transient analysis allows the imaging of defect levels. As with DLTS, the temperature dependence of the transient can be used to extract trap activation levels. In this, the first of a two-part paper, we introduce the various stages of corner capture and derive a simple expression for the observed charge transient. The second paper will illustrate the technique on a MeV ion implanted Au-Si Schottky junction

  17. Influence of Current Transformer Saturation on Operation of Current Protection

    F. A. Romaniouk

    2010-01-01

    Full Text Available An analysis of the influence of instrument current transformer errors on operation of current protection of power supply diagram elements has been carried out in the paper. The paper shows the influence of an aperiodic component of transient current and secondary load on current  transformer errors.Peculiar operational features of measuring elements of electromechanical and microprocessor current protection with their joint operation with electromagnetic current transformers have been analyzed in the paper.

  18. Transient or permanent fisheye views

    Jakobsen, Mikkel Rønne; Hornbæk, Kasper

    2012-01-01

    Transient use of information visualization may support specific tasks without permanently changing the user interface. Transient visualizations provide immediate and transient use of information visualization close to and in the context of the user’s focus of attention. Little is known, however......, about the benefits and limitations of transient visualizations. We describe an experiment that compares the usability of a fisheye view that participants could call up temporarily, a permanent fisheye view, and a linear view: all interfaces gave access to source code in the editor of a widespread...... programming environment. Fourteen participants performed varied tasks involving navigation and understanding of source code. Participants used the three interfaces for between four and six hours in all. Time and accuracy measures were inconclusive, but subjective data showed a preference for the permanent...

  19. Transient thyrotoxicosis during nivolumab treatment

    van Kooten, M. J.; van den Berg, G.; Glaudemans, A. W. J. M.; Hiltermann, T. J. N.; Groen, H. J. M.; Rutgers, A.; Links, T. P.

    Two patients presented with transient thyrotoxicosis within 2-4 weeks after starting treatment with nivolumab. This thyrotoxicosis turned into hypothyroidism within 6-8 weeks. Temporary treatment with a beta blocker may be sufficient.

  20. Transient Tsunamis in Lakes

    Couston, L.; Mei, C.; Alam, M.

    2013-12-01

    A large number of lakes are surrounded by steep and unstable mountains with slopes prone to failure. As a result, landslides are likely to occur and impact water sitting in closed reservoirs. These rare geological phenomena pose serious threats to dam reservoirs and nearshore facilities because they can generate unexpectedly large tsunami waves. In fact, the tallest wave experienced by contemporary humans occurred because of a landslide in the narrow bay of Lituya in 1958, and five years later, a deadly landslide tsunami overtopped Lake Vajont's dam, flooding and damaging villages along the lakefront and in the Piave valley. If unstable slopes and potential slides are detected ahead of time, inundation maps can be drawn to help people know the risks, and mitigate the destructive power of the ensuing waves. These maps give the maximum wave runup height along the lake's vertical and sloping boundaries, and can be obtained by numerical simulations. Keeping track of the moving shorelines along beaches is challenging in classical Eulerian formulations because the horizontal extent of the fluid domain can change over time. As a result, assuming a solid slide and nonbreaking waves, here we develop a nonlinear shallow-water model equation in the Lagrangian framework to address the problem of transient landslide-tsunamis. In this manner, the shorelines' three-dimensional motion is part of the solution. The model equation is hyperbolic and can be solved numerically by finite differences. Here, a 4th order Runge-Kutta method and a compact finite-difference scheme are implemented to integrate in time and spatially discretize the forced shallow-water equation in Lagrangian coordinates. The formulation is applied to different lake and slide geometries to better understand the effects of the lake's finite lengths and slide's forcing mechanism on the generated wavefield. Specifically, for a slide moving down a plane beach, we show that edge-waves trapped by the shoreline and free

  1. Transient selection in multicellular immune networks

    Ivanchenko, M. V.

    2011-03-01

    We analyze the dynamics of a multi-clonotype naive T-cell population competing for survival signals from antigen-presenting cells. We find that this competition provides with an efficacious selection of clonotypes, making the less able and more repetitive get extinct. We uncover the scaling principles for large systems the extinction rate obeys and calibrate the model parameters to their experimental counterparts. For the first time, we estimate the physiological values of the T-cell receptor-antigen presentation profile recognition probability and T-cell clonotypes niche overlap. We demonstrate that, while the ultimate state is a stable fixed point, sequential transients dominate the dynamics over large timescales that may span over years, if not decades, in real time. We argue that what is currently viewed as "homeostasis" is a complex sequential transient process, while being quasi-stationary in the total number of T-cells only. The discovered type of sequential transient dynamics in large random networks is a novel alternative to the stable heteroclinic channel mechanism.

  2. Beam induced rf cavity transient voltage

    Kramer, S.L.; Wang, J.M.

    1998-10-01

    The authors calculate the transient voltage induced in a radio frequency cavity by the injection of a relativistic bunched beam into a circular accelerator. A simplified model of the beam induced voltage, using a single tone current signal, is generated and compared with the voltage induced by a more realistic model of a point-like bunched beam. The high Q limit of the bunched beam model is shown to be related simply to the simplified model. Both models are shown to induce voltages at the resonant frequency ω r of the cavity and at an integer multiple of the bunch revolution frequency (i.e. the accelerating frequency for powered cavity operation) hω ο . The presence of two nearby frequencies in the cavity leads to a modulation of the carrier wave exp(hω ο t). A special emphasis is placed in this paper on studying the modulation function. These models prove useful for computing the transient voltage induced in superconducting rf cavities, which was the motivation behind this research. The modulation of the transient cavity voltage discussed in this paper is the physical basis of the recently observed and explained new kinds of longitudinal rigid dipole mode which differs from the conventional Robinson mode

  3. Could the cosmic acceleration be transient?

    Guimaraes, Antonio C.C.; Lima, J.A.S. [Universidade de Sao Paulo (IAG/USP), SP (Brazil). Inst. de Astronomia, Geofisica e Ciencias Atmosfericas

    2011-07-01

    Full text: The possibility of a transient cosmic acceleration appears in several theoretical scenarios and is theoretically interesting because it solves some difficulties inherent to eternally accelerating universes (like {Lambda}CDM). On the observational side, some authors, using a dynamical Ansatz for the dark energy equation of state, have suggested that the cosmic acceleration have already peaked and that we are currently witnessing its slowing down. Here, a possible slowing down of the cosmic expansion is investigated through a cosmographic approach. By expanding the luminous distance to fourth order and fitting the SNe Ia data from the most recent compilations (Union, Constitution and Union 2), the marginal likelihood distribution for the deceleration parameter today indicates that there is a considerable probability for q{sub 0} > 0. Also in contrast to the prediction of the {Lambda}CDM model, the cosmographic q(z) reconstruction suggests that the cosmic acceleration could already have peaked and be presently slowing down, what would imply that the recent accelerated expansion of the Universe is a transient phenomenon. It is also shown that to describe a transient acceleration the luminous distance needs to be expanded at least to fourth order. The present cosmographic results depend neither on the validity of general relativity nor on the matter-energy contents of the Universe. (author)

  4. A 0.18 micrometer CMOS Thermopile Readout ASIC Immune to 50 MRAD Total Ionizing Dose (SI) and Single Event Latchup to 174MeV-cm(exp 2)/mg

    Quilligan, Gerard T.; Aslam, Shahid; Lakew, Brook; DuMonthier, Jeffery J.; Katz, Richard B.; Kleyner, Igor

    2014-01-01

    Radiation hardened by design (RHBD) techniques allow commercial CMOS circuits to operate in high total ionizing dose and particle fluence environments. Our radiation hard multi-channel digitizer (MCD) ASIC (Figure 1) is a versatile analog system on a chip (SoC) fabricated in 180nm CMOS. It provides 18 chopper stabilized amplifier channels, a 16- bit sigma-delta analog-digital converter (SDADC) and an on-chip controller. The MCD was evaluated at Goddard Space Flight Center and Texas A&M University's radiation effects facilities and found to be immune to single event latchup (SEL) and total ionizing dose (TID) at 174 MeV-cm(exp 2)/mg and 50 Mrad (Si) respectively.

  5. PWR plant transient analyses using TRAC-PF1

    Ireland, J.R.; Boyack, B.E.

    1984-01-01

    This paper describes some of the pressurized water reactor (PWR) transient analyses performed at Los Alamos for the US Nuclear Regulatory Commission using the Transient Reactor Analysis Code (TRAC-PF1). Many of the transient analyses performed directly address current PWR safety issues. Included in this paper are examples of two safety issues addressed by TRAC-PF1. These examples are pressurized thermal shock (PTS) and feed-and-bleed cooling for Oconee-1. The calculations performed were plant specific in that details of both the primary and secondary sides were modeled in addition to models of the plant integrated control systems. The results of these analyses show that for these two transients, the reactor cores remained covered and cooled at all times posing no real threat to the reactor system nor to the public

  6. Transient Mixed Convection Validation for NGNP

    Smith, Barton [Utah State Univ., Logan, UT (United States); Schultz, Richard [Idaho National Lab. (INL), Idaho Falls, ID (United States)

    2015-10-19

    The results of this project are best described by the papers and dissertations that resulted from the work. They are included in their entirety in this document. They are: (1) Jeff Harris PhD dissertation (focused mainly on forced convection); (2) Blake Lance PhD dissertation (focused mainly on mixed and transient convection). This dissertation is in multi-paper format and includes the article currently submitted and one to be submitted shortly; and, (3) JFE paper on CFD Validation Benchmark for Forced Convection.

  7. Transient Mixed Convection Validation for NGNP

    Smith, Barton; Schultz, Richard

    2015-01-01

    The results of this project are best described by the papers and dissertations that resulted from the work. They are included in their entirety in this document. They are: (1) Jeff Harris PhD dissertation (focused mainly on forced convection); (2) Blake Lance PhD dissertation (focused mainly on mixed and transient convection). This dissertation is in multi-paper format and includes the article currently submitted and one to be submitted shortly; and, (3) JFE paper on CFD Validation Benchmark for Forced Convection.

  8. Effect of state feedback coupling on the transient performance of voltage source inverters with LC filter

    Federico, de Bosio; Pastorelli, Michele; Antonio DeSouza Ribeiro, Luiz

    2016-01-01

    State feedback coupling between the capacitor voltage and inductor current deteriorates notably the performance during transients of voltage and current regulators in stand-alone systems based on voltage source inverters. A decoupling technique is proposed, considering the limitations introduced...

  9. Transient magnetoviscosity of dilute ferrofluids

    Soto-Aquino, Denisse; Rinaldi, Carlos

    2011-01-01

    The magnetic field induced change in the viscosity of a ferrofluid, commonly known as the magnetoviscous effect and parameterized through the magnetoviscosity, is one of the most interesting and practically relevant aspects of ferrofluid phenomena. Although the steady state behavior of ferrofluids under conditions of applied constant magnetic fields has received considerable attention, comparatively little attention has been given to the transient response of the magnetoviscosity to changes in the applied magnetic field or rate of shear deformation. Such transient response can provide further insight into the dynamics of ferrofluids and find practical application in the design of devices that take advantage of the magnetoviscous effect and inevitably must deal with changes in the applied magnetic field and deformation. In this contribution Brownian dynamics simulations and a simple model based on the ferrohydrodynamics equations are applied to explore the dependence of the transient magnetoviscosity for two cases: (I) a ferrofluid in a constant shear flow wherein the magnetic field is suddenly turned on, and (II) a ferrofluid in a constant magnetic field wherein the shear flow is suddenly started. Both simulations and analysis show that the transient approach to a steady state magnetoviscosity can be either monotonic or oscillatory depending on the relative magnitudes of the applied magnetic field and shear rate. - Research Highlights: →Rotational Brownian dynamics simulations were used to study the transient behavior of the magnetoviscosity of ferrofluids. →Damped and oscillatory approach to steady state magnetoviscosity was observed for step changes in shear rate and magnetic field. →A model based on the ferrohydrodynamics equations qualitatively captured the damped and oscillatory features of the transient response →The transient behavior is due to the interplay of hydrodynamic, magnetic, and Brownian torques on the suspended particles.

  10. Lightning transient analysis in wind turbine blades

    Candela Garolera, Anna; Holbøll, Joachim; Madsen, Søren Find

    2013-01-01

    The transient behavior of lightning surges in the lightning protection system of wind turbine blades has been investigated in this paper. The study is based on PSCAD models consisting of electric equivalent circuits with lumped and distributed parameters involving different lightning current...... waveforms. The aim of the PSCAD simulations is to study the voltages induced by the lightning current in the blade that may cause internal arcing. With this purpose, the phenomenon of current reflections in the lightning down conductor of the blade and the electromagnetic coupling between the down conductor...... and other internal conductive elements of the blade is studied. Finally, several methods to prevent internal arcing are discussed in order to improve the lightning protection of the blade....

  11. Generation of intense transient magnetic fields

    Benjamin, R.F.

    1983-01-01

    In a laser system, the return current of a laser generated plasma is conducted near a target to subject that target to a magnetic field. The target may be either a small non-fusion object for testing under the magnetic field or a laser-fusion pellet. In the laser-fusion embodiment, the laser-fusion pellet is irradiated during the return current flow and the intense transient magnetic field is used to control the hot electrons thereof to hinder them from striking and heating the core of the irradiated laser-fusion pellet. An emitter, e.g. a microballoon of glass, metal or plastics, is subjected to a laser pulse to generate the plasma from which the return current flows into a wire cage or a coil and then to earth. (author)

  12. Suppressing voltage transients in high voltage power supplies

    Lickel, K.F.; Stonebank, R.

    1979-01-01

    A high voltage power supply for an X-ray tubes includes voltage adjusting means, a high voltage transformer, switch means connected to make and interrupt the primary current of the transformer, and over-voltage suppression means to suppress the voltage transient produced when the current is switched on. In order to reduce the power losses in the suppression means, an impedance is connected in the transformer primary circuit on operation of the switch means and is subsequently short-circuited by a switch controlled by a timer after a period which is automatically adjusted to the duration of the transient overvoltage. (U.K.)

  13. Simulation of transient effects in the heavy ion fusion injectors

    Chen, Y.J.; Hewett, D.

    1993-01-01

    The authors have used the 2-D PIC code, GYMNOS, to study the transient behaviors in the Heavy Ion Fusion (HIF) injectors. GYMNOS simulations accurately provide the steady state Child-Langmuir current and the beam transient behavior within a planar diode. The simulations of the LBL HIF ESAC injector experiments agree well with the experimental data and EGUN steady state results. Simulations of the nominal HIF injectors have revealed the need to design the accelerating electrodes carefully to control the ion beam current, particularly the ion loss at the end of the bunch as the extraction voltage is reduced

  14. Simulation of transient effects in the heavy ion fusion injectors

    Chen, Yu-Jiuan; Hewett, D. W.

    1993-05-01

    We have used the 2-D PIC code, GYMNOS, to study the transient behaviors in the Heavy Ion Fusion (HIF) injectors. GYMNOS simulations accurately provide the steady state Child-Langmuir current and the beam transient behavior within a planar diode. The simulations of the LBL HIF ESAC injector experiments agree well with the experimental data and EGUN steady state results. Simulations of the nominal HIF injectors have revealed the need to design the accelerating electrodes carefully to control the ion beam current, particularly the ion loss at the end of the bunch as the extraction voltage is reduced.

  15. Measuring voltage transients with an ultrafast scanning tunneling microscope

    Keil, Ulrich Dieter Felix; Jensen, Jacob Riis; Hvam, Jørn Märcher

    1997-01-01

    circuit, where the tunneling tip is directly connected to the current amplifier of the scanning tunneling microscope, this dependence is eliminated. Ail results can be explained with coupling through the geometrical capacitance of the tip-electrode junction. By illuminating the current......We use an ultrafast scanning tunneling microscope to resolve propagating voltage transients in space and time. We demonstrate that the previously observed dependence of the transient signal amplitude on the tunneling resistance was only caused by the electrical sampling circuit. With a modified...

  16. Experimental study on transient boiling heat transfer

    Visentini, R.

    2012-01-01

    well. A flexible power supply that can generate a free-shape signal, allows to get to a wall-temperature increase rate up to 2500 K/s but also to obtain lower rates, which permits to study weaker transients and steady state conditions. The thermal measurements are realised by means of an infra-red camera and a high-speed camera is employed in order to see the boiling phenomena at the same time. From the voltage and current measurements the heat flux that is passed to the fluid is known. It is possible to underline some of the main results of this work. We found that, even when the boiling onset occurs soon because of the high power, transient conduction is always coupled with transient convection. The boiling onset occurs when the wall superheat is between 10 K et 30 K. This value corresponds to the activation of the smallest nucleation sites at the wall. The literature correlations well fit the nucleate boiling data in steady-state conditions. When the wall-temperature increase rate leads to transient boiling, the heat flux is higher than in steady state. This is consistent with what was found in previous studies. The nucleate boiling phase may last only a few milliseconds when the power is really high and the wall temperature increases really rapidly (500-2000 K/s). The experiments in transient boiling also point out that the heat flux is larger than in steady state conditions for the other regimes: Critical heat flux and also film boiling. The experimental set-up allows to investigate a large range of parameters (wall-temperature increase rate, flow rate, fluid temperature) by means of accurate temperature measurements and visualisations. Some modeling of the heat transfer are also proposed. (author)

  17. Pressure transients across HEPA filters

    Gregory, W.; Reynolds, G.; Ricketts, C.; Smith, P.R.

    1977-01-01

    Nuclear fuel cycle facilities require ventilation for health and safety reasons. High efficiency particulate air (HEPA) filters are located within ventilation systems to trap radioactive dust released in reprocessing and fabrication operations. Pressure transients within the air cleaning systems may be such that the effectiveness of the filtration system is questioned under certain accident conditions. These pressure transients can result from both natural and man-caused phenomena: atmospheric pressure drop caused by a tornado or explosions and nuclear excursions initiate pressure pulses that could create undesirable conditions across HEPA filters. Tornado depressurization is a relatively slow transient as compared to pressure pulses that result from combustible hydrogen-air mixtures. Experimental investigation of these pressure transients across air cleaning equipment has been undertaken by Los Alamos Scientific Laboratory and New Mexico State University. An experimental apparatus has been constructed to impose pressure pulses across HEPA filters. The experimental equipment is described as well as preliminary results using variable pressurization rates. Two modes of filtration of an aerosol injected upstream of the filter is examined. A laser instrumentation for measuring the aerosol release, during the transient, is described

  18. Wide Field Radio Transient Surveys

    Bower, Geoffrey

    2011-04-01

    The time domain of the radio wavelength sky has been only sparsely explored. Nevertheless, serendipitous discovery and results from limited surveys indicate that there is much to be found on timescales from nanoseconds to years and at wavelengths from meters to millimeters. These observations have revealed unexpected phenomena such as rotating radio transients and coherent pulses from brown dwarfs. Additionally, archival studies have revealed an unknown class of radio transients without radio, optical, or high-energy hosts. The new generation of centimeter-wave radio telescopes such as the Allen Telescope Array (ATA) will exploit wide fields of view and flexible digital signal processing to systematically explore radio transient parameter space, as well as lay the scientific and technical foundation for the Square Kilometer Array. Known unknowns that will be the target of future transient surveys include orphan gamma-ray burst afterglows, radio supernovae, tidally-disrupted stars, flare stars, and magnetars. While probing the variable sky, these surveys will also provide unprecedented information on the static radio sky. I will present results from three large ATA surveys (the Fly's Eye survey, the ATA Twenty CM Survey (ATATS), and the Pi GHz Survey (PiGSS)) and several small ATA transient searches. Finally, I will discuss the landscape and opportunities for future instruments at centimeter wavelengths.

  19. Chernobyl reactor transient simulation study

    Gaber, F.A.; El Messiry, A.M.

    1988-01-01

    This paper deals with the Chernobyl nuclear power station transient simulation study. The Chernobyl (RBMK) reactor is a graphite moderated pressure tube type reactor. It is cooled by circulating light water that boils in the upper parts of vertical pressure tubes to produce steam. At equilibrium fuel irradiation, the RBMK reactor has a positive void reactivity coefficient. However, the fuel temperature coefficient is negative and the net effect of a power change depends upon the power level. Under normal operating conditions the net effect (power coefficient) is negative at full power and becomes positive under certain transient conditions. A series of dynamic performance transient analysis for RBMK reactor, pressurized water reactor (PWR) and fast breeder reactor (FBR) have been performed using digital simulator codes, the purpose of this transient study is to show that an accident of Chernobyl's severity does not occur in PWR or FBR nuclear power reactors. This appears from the study of the inherent, stability of RBMK, PWR and FBR under certain transient conditions. This inherent stability is related to the effect of the feed back reactivity. The power distribution stability in the graphite RBMK reactor is difficult to maintain throughout its entire life, so the reactor has an inherent instability. PWR has larger negative temperature coefficient of reactivity, therefore, the PWR by itself has a large amount of natural stability, so PWR is inherently safe. FBR has positive sodium expansion coefficient, therefore it has insufficient stability it has been concluded that PWR has safe operation than FBR and RBMK reactors

  20. HEDL experimental transient overpower program

    Hikido, T.; Culley, G.E.

    1976-01-01

    HEDL is conducting a series of experiments to evaluate the performance of Fast Flux Test Facility (FFTF) prototypic fuel pins up to the point of cladding breach. A primary objective of the program is to demonstrate the adequacy of fuel pin and Plant Protective System (PPS) designs for terminated transients. Transient tests of prototypic FFTF fuel pins previously irradiated in the Experimental Breeder Reactor-II (EBR-II) have demonstrated the adequacy of the PPS and fuel pin designs and indicate that a very substantial margin exists between PPS-terminated transients and that required to produce fuel pin cladding failure. Additional experiments are planned to extend the data base to high burnup, high fluence fuel pin specimens

  1. Transient voltage oscillations in coils

    Chowdhuri, P.

    1985-01-01

    Magnet coils may be excited into internal voltage oscillations by transient voltages. Such oscillations may electrically stress the magnet's dielectric components to many times its normal stress. This may precipitate a dielectric failure, and the attendant prolonged loss of service and costly repair work. Therefore, it is important to know the natural frequencies of oscillations of a magnet during the design stage, and to determine whether the expected switching transient voltages can excite the magnet into high-voltage internal oscillations. The series capacitance of a winding significantly affects its natural frequencies. However, the series capacitance is difficult to calculate, because it may comprise complex capacitance network, consisting of intra- and inter-coil turn-to-turn capacitances of the coil sections. A method of calculating the series capacitance of a winding is proposed. This method is rigorous but simple to execute. The time-varying transient voltages along the winding are also calculated

  2. Transient analysis of DTT rakes

    Kamath, P.S.; Lahey, R.T. Jr.

    1981-01-01

    This paper presents an analytical model for the determination of the cross-sectionally averaged transient mass flux of a two-phase fluid flowing in a conduit instrumented by a Drag-Disk Turbine Transducer (DTT) Rake and a multibeam gamma densitometer. Parametric studies indicate that for a typical blowdown transient, dynamic effects such as rotor inertia can be important for the turbine-meter. In contrast, for the drag-disk, a frequency response analysis showed that the quasisteady solution is valid below a forcing frequency of about 10 Hz, which is faster than the time scale normally encountered during blowdowns. The model showed reasonably good agreement with full scale transient rake data, where the flow regimes were mostly homogeneous or stratified, thus indicating that the model is suitable for the analysis of a DTT rake. (orig.)

  3. SCANAIR: A transient fuel performance code

    Moal, Alain; Georgenthum, Vincent; Marchand, Olivier

    2014-01-01

    Highlights: • Since the early 1990s, the code SCANAIR is developed at IRSN. • The software focuses on studying fast transients such as RIA in light water reactors. • The fuel rod modelling is based on a 1.5D approach. • Thermal and thermal-hydraulics, mechanical and gas behaviour resolutions are coupled. • The code is used for safety assessment and integral tests analysis. - Abstract: Since the early 1990s, the French “Institut de Radioprotection et de Sûreté Nucléaire” (IRSN) has developed the SCANAIR computer code with the view to analysing pressurised water reactor (PWR) safety. This software specifically focuses on studying fast transients such as reactivity-initiated accidents (RIA) caused by possible ejection of control rods. The code aims at improving the global understanding of the physical mechanisms governing the thermal-mechanical behaviour of a single rod. It is currently used to analyse integral tests performed in CABRI and NSRR experimental reactors. The resulting validated code is used to carry out studies required to evaluate margins in relation to criteria for different types of fuel rods used in nuclear power plants. Because phenomena occurring during fast power transients are complex, the simulation in SCANAIR is based on a close coupling between several modules aimed at modelling thermal, thermal-hydraulics, mechanical and gas behaviour. During the first stage of fast power transients, clad deformation is mainly governed by the pellet–clad mechanical interaction (PCMI). At the later stage, heat transfers from pellet to clad bring the cladding material to such high temperatures that the boiling crisis might occurs. The significant over-pressurisation of the rod and the fact of maintaining the cladding material at elevated temperatures during a fairly long period can lead to ballooning and possible clad failure. A brief introduction describes the context, the historical background and recalls the main phenomena involved under

  4. SCANAIR: A transient fuel performance code

    Moal, Alain, E-mail: alain.moal@irsn.fr; Georgenthum, Vincent; Marchand, Olivier

    2014-12-15

    Highlights: • Since the early 1990s, the code SCANAIR is developed at IRSN. • The software focuses on studying fast transients such as RIA in light water reactors. • The fuel rod modelling is based on a 1.5D approach. • Thermal and thermal-hydraulics, mechanical and gas behaviour resolutions are coupled. • The code is used for safety assessment and integral tests analysis. - Abstract: Since the early 1990s, the French “Institut de Radioprotection et de Sûreté Nucléaire” (IRSN) has developed the SCANAIR computer code with the view to analysing pressurised water reactor (PWR) safety. This software specifically focuses on studying fast transients such as reactivity-initiated accidents (RIA) caused by possible ejection of control rods. The code aims at improving the global understanding of the physical mechanisms governing the thermal-mechanical behaviour of a single rod. It is currently used to analyse integral tests performed in CABRI and NSRR experimental reactors. The resulting validated code is used to carry out studies required to evaluate margins in relation to criteria for different types of fuel rods used in nuclear power plants. Because phenomena occurring during fast power transients are complex, the simulation in SCANAIR is based on a close coupling between several modules aimed at modelling thermal, thermal-hydraulics, mechanical and gas behaviour. During the first stage of fast power transients, clad deformation is mainly governed by the pellet–clad mechanical interaction (PCMI). At the later stage, heat transfers from pellet to clad bring the cladding material to such high temperatures that the boiling crisis might occurs. The significant over-pressurisation of the rod and the fact of maintaining the cladding material at elevated temperatures during a fairly long period can lead to ballooning and possible clad failure. A brief introduction describes the context, the historical background and recalls the main phenomena involved under

  5. Transient analysis of multicavity klystrons

    Lavine, T.L.; Miller, R.H.; Morton, P.L.; Ruth, R.D.

    1988-09-01

    We describe a model for analytic analysis of transients in multicavity klystron output power and phase. Cavities are modeled as resonant circuits, while bunching of the beam is modeled using linear space-charge wave theory. Our analysis has been implemented in a computer program which we use in designing multicavity klystrons with stable output power and phase. We present as examples transient analysis of a relativistic klystron using a magnetic pulse compression modulator, and of a conventional klystron designed to use phase shifting techniques for RF pulse compression. 4 refs., 4 figs

  6. Transient formation of forbidden lines

    Rosmej, F.B.; Rosmej, O.N.

    1996-01-01

    An explanation of anomalously long time scales in the transient formation of forbidden lines is proposed. The concept is based on a collisionally induced density dependence of the relaxation times of metastable level populations in transient plasma. Generalization leads to an incorporation of diffusion phenomena. We demonstrate this new concept for the simplest atomic system: the He-like isoelectronic sequence. A new interpretation of the observed long duration and anomalously high intensity of spin-forbidden emission in hot plasmas is given. (author)

  7. Transient formation of forbidden lines

    Rosmej, F.B. [Bochum Univ., Ruhr (Germany). Inst. fuer Experimentalphysik V; Rosmej, O.N. [VNIIFTRI, Moscow Region (Russian Federation). MISDC

    1996-05-14

    An explanation of anomalously long time scales in the transient formation of forbidden lines is proposed. The concept is based on a collisionally induced density dependence of the relaxation times of metastable level populations in transient plasma. Generalization leads to an incorporation of diffusion phenomena. We demonstrate this new concept for the simplest atomic system: the He-like isoelectronic sequence. A new interpretation of the observed long duration and anomalously high intensity of spin-forbidden emission in hot plasmas is given. (author).

  8. Controlling the Er content of porous silicon using the doping current intensity

    Mula, Guido; Loddo, Lucy; Pinna, Elisa; Tiddia, Maria V; Mascia, Michele; Palmas, Simonetta; Ruffilli, Roberta; Falqui, Andrea

    2014-01-01

    measurements were used to investigate on the transient during the first stages of constant current Er doping. Depending on the applied current intensity, the voltage transient displays two very different behaviors, signature of two different chemical processes

  9. Transient attenuation in optical fibers

    Hopkins, A.A.; Kelly, R.E.; Looney, L.D.; Lyons, P.B.

    1984-01-01

    Low and high energy pulsed electron beams were used to generate radiation-induced transient attenuation in high-OH, Suprasil core, PCS fibers, demonstrating the energy dependence of the radiation damage and recovery mechanisms. A radiation resistant low-OH fiber was studied and its performance contrasted to that of high-OH materials. Several fibers with differing core compositions were also studied

  10. Charging transient in polyvinyl formal

    Unknown

    401–406. © Indian Academy of Sciences. 401. Charging transient in polyvinyl formal. P K KHARE*, P L JAIN† and R K PANDEY‡. Department of Postgraduate Studies & Research in Physics & Electronics, Rani Durgavati University,. Jabalpur 482 001, India. †Department of Physics, Government PG College, Damoh 470 ...

  11. Transient filament stretching rheometer II

    Kolte, Mette Irene; Rasmussen, Henrik K.; Hassager, Ole

    1997-01-01

    The Lagrangian sspecification is used to simulate the transient stretching filament rheometer. Simulations are performed for dilute PIB-solutions modeled as a four mode Oldroyd-B fluid and a semidilute PIB-solution modeled as a non-linear single integral equation. The simulations are compared...

  12. Fuel rod behaviour during transients

    Hughes, H.; Haste, T.J.; Cameron, R.F.; Sinclair, J.E.

    1982-04-01

    The fuel pin performance code SLEUTH, the transient codes FRAP-T5 and TRAFIC and the clad deformation code CANSWEL-2 are described. It is shown how the codes treat gas release, pin cooling, cladding deformation and interaction, gap conductance etc. The materials properties used are indicated. (author)

  13. Simulation Model of a Transient

    Jauch, Clemens; Sørensen, Poul; Bak-Jensen, Birgitte

    2005-01-01

    This paper describes the simulation model of a controller that enables an active-stall wind turbine to ride through transient faults. The simulated wind turbine is connected to a simple model of a power system. Certain fault scenarios are specified and the turbine shall be able to sustain operati...

  14. Stationary and Transient Response Statistics

    Madsen, Peter Hauge; Krenk, Steen

    1982-01-01

    The covariance functions for the transient response of a linear MDOF-system due to stationary time limited excitation with an arbitrary frequency content are related directly to the covariance functions of the stationary response. For rational spectral density functions closed form expressions fo...

  15. Transient anisotropic magnetic field calculation

    Jesenik, Marko; Gorican, Viktor; Trlep, Mladen; Hamler, Anton; Stumberger, Bojan

    2006-01-01

    For anisotropic magnetic material, nonlinear magnetic characteristics of the material are described with magnetization curves for different magnetization directions. The paper presents transient finite element calculation of the magnetic field in the anisotropic magnetic material based on the measured magnetization curves for different magnetization directions. For the verification of the calculation method some results of the calculation are compared with the measurement

  16. Transient potentials in dendritic systems of arbitrary geometry.

    Butz, E G; Cowan, J D

    1974-09-01

    A simple graphical calculus is developed that generates analytic solutions for membrane potential transforms at any point on the dendritic tree of neurons with arbitrary dendritic geometries, in response to synaptic "current" inputs. Such solutions permit the computation of transients in neurons with arbitrary geometry and may facilitate analysis of the role of dendrites in such cells.

  17. Transient magnetic tunneling mediated by a molecular bridge

    Kalvová, Anděla; Špička, Václav; Velický, B.

    2015-01-01

    Roč. 28, č. 3 (2015), 1087-1091 ISSN 1557-1939 R&D Projects: GA ČR GAP204/12/0897 Institutional support: RVO:68378271 Keywords : non-equilibrium * initial conditions * transient currents * molecular islands Subject RIV: BE - Theoretical Physics Impact factor: 1.100, year: 2015

  18. [Transient amnesia in the elderly].

    Sellal, François

    2006-03-01

    The two main aetiologies of transient amnesia in the elderly are idiopathic transient global amnesia (TGA) and iatrogenic or toxic amnesia. Vascular and epileptic amnesia are less common. According to the literature, transient psychogenic amnesia, which is a frequent cause of amnesia at age 30 to 50, is very rare in the elderly. TGA is the prototypical picture of transient amnesia. It occurs more often after age 50, with no identified cause, even if some authors accept emotional stress or minor head trauma as occasional precipitants. The mechanism of TGA remains a matter of discussion. It may be the consequence of a spreading depression similar to that described in migraine with aura, but other arguments support an ischemic mechanism. Iatrogenic amnesias are mainly caused by benzodiazepines (BZs) or anticholinergics. The former may occur in a non-anxious subject, who is not a usual consumer of BZ and takes a single dose. The latter are more often due to a hypersensitivity to anticholinergic drugs, in particular in patients presenting with a covert, incipient Alzheimer's disease. A vascular origin must be considered when amnesia is accompanied by other neurological symptoms, and when the regression of the amnesic disorder is slow, lasting several days. It results from lesions involving various mechanisms and locations, mainly subcortical. Partial seizures, most often mesio-temporal, more rarely frontal, may be the cause of transient amnesia in the elderly, in the absence of a past history of epilepsy. The red flag supportive of an epileptic origin is the repetition of stereotyped amnesic episodes. EEG demonstration of seizures may be difficult and the response to antiepileptic drugs effective on partial seizures is usually good.

  19. Research of the transient management in TQNPC

    Guo Longzhang; Lin Chuanqing

    2008-01-01

    Transient management is the basic technical subject in nuclear power plant. Since the Third Qinshan nuclear power company (TQNPC) successful completes the commissioning in 2003, the transient management work start at the transient management item selection and the flow definition. Now TQNPC have a complete transient management system and the management flow. In the last two years, TNQPC have finished the historic transient data collection for two units, and confirmed that the plant's key systems and equipments are at safe state. The development of the transient management subject would build a reliable foundation for the plant safe operation, plant lifetime management and periodic safety review. (author)

  20. Fluid transient analysis and design considerations in TVA PWR feedwater systems and steam generators

    Kelley, B.T.

    1979-01-01

    TVA has evaluated a number of fluid transients in an effort to discover areas of potential problems and to improve overall unit operation. The transients recently or currently being evaluated fall into four major areas - accident analyses, fast valving, heater drain systems, and steam generators. A discussion of each area follows

  1. The SEM description of interaction of a transient electromagnetic wave with an object

    Pearson, L. W.; Wilton, D. R.

    1980-01-01

    The singularity expansion method (SEM), proposed as a means for determining and representing the transient surface current density induced on a scatterer by a transient electromagnetic wave is described. The resulting mathematical description of the transient surface current on the object is discussed. The data required to represent the electromagnetic scattering properties of a given object are examined. Experimental methods which were developed for the determination of the SEM description are discussed. The feasibility of characterizing the surface current induced on aircraft flying in proximity to a lightning stroke by way of SEM is examined.

  2. Transient electromagnetic analysis in tokamaks using TYPHOON code

    Belov, A.V.; Duke, A.E.; Korolkov, M.D.; Kotov, V.L.; Kukhtin, V.P.; Lamzin, E.A.; Sytchevsky, S.E.

    1996-01-01

    The transient electromagnetic analysis of conducting structures in tokamaks is presented. This analysis is based on a three-dimensional thin conducting shell model. The finite element method has been used to solve the corresponding integrodifferential equation. The code TYPHOON has been developed to calculate transient processes in tokamaks. Calculation tests and the code verification have been carried out. The calculation results of eddy current and force distibution and a.c. losses for different construction elements for both ITER and TEXTOR tokamaks magnetic systems are presented. (orig.)

  3. Preliminary analysis of typical transients in fusion driven subcritical system (FDS-I)

    Bai Yunqing; Ke Yan; Wu Yican

    2007-01-01

    The potential safety characteristic is expected as one of the advantages of fusion-driven subcritical system (FDS-I) for the transmutation and incineration of nuclear waste compared with the critical reactor. Transients of the FDS-I may occur due to the perturbation of external neutron source, the failure of functional device, and the occurrence of the uncontrolled event. As typical transient scenarios, the following cases were analyzed: unprotected plasma overpower (UPOP), unprotected loss of flow (ULOF), unprotected transient overpower (UTOP). The transient analyses for the FDS-I were performed with a coupled two-dimensional thermal-hydraulics and neutronics transient analysis code NTC2D. The negative feedback of reactivity is the interesting safety feature of FDS-I as temperature increase, due to the fuel form of the circulating particle. The present simulation results showed that the current FDS-I design has a resistance against severe transient scenarios. (author)

  4. Nuclear power plant transients: where are we

    Majumdar, D.

    1984-05-01

    This document is in part a postconference review and summary of the American Nuclear Society sponsored Anticipated and Abnormal Plant Transients in Light Water Reactors Conference held in Jackson, Wyoming, September 26-29, 1983, and in part a reflection upon the issues of plant transients and their impact on the viability of nuclear power. This document discusses state-of-the-art knowledge, deficiencies, and future directions in the plant transients area as seen through this conference. It describes briefly what was reported in this conference, emphasizes areas where it is felt there is confidence in the nuclear industry, and also discusses where the experts did not have a consensus. Areas covered in the document include major issues in operational transients, transient management, transient events experience base, the status of the analytical tools and their capabilities, probabilistic risk assessment applications in operational transients, and human factors impact on plant transients management

  5. Do Magnetic Fields drive high-energy explosive transients?

    Mundell, Carole

    2017-01-01

    I will review the current state-of-the-art in real-time, rapid response optical imaging and polarimetric followup of transient sources such as Gamma Ray Bursts. I will interpret current results within the context of the external shock model and present predictions for future mm- and cm-wave radio observatories. Recent observational results from new radio pilot studies will also be presented.

  6. Do Magnetic Fields Drive High-Energy Explosive Transients?

    Mundell, Carole

    2017-10-01

    I will review the current state-of-the-art in real-time, rapid response optical imaging and polarimetric followup of transient sources such as Gamma Ray Bursts. I will interpret current results within the context of the external shock model and present predictions for future mm- and cm-wave radio observatories. Recent observational results from new radio pilot studies will also be presented.

  7. Nonlinear Diffusion and Transient Osmosis

    Igarashi, Akira; Rondoni, Lamberto; Botrugno, Antonio; Pizzi, Marco

    2011-01-01

    We investigate both analytically and numerically the concentration dynamics of a solution in two containers connected by a narrow and short channel, in which diffusion obeys a porous medium equation. We also consider the variation of the pressure in the containers due to the flow of matter in the channel. In particular, we identify a phenomenon, which depends on the transport of matter across nano-porous membranes, which we call ''transient osmosis . We find that nonlinear diffusion of the porous medium equation type allows numerous different osmotic-like phenomena, which are not present in the case of ordinary Fickian diffusion. Experimental results suggest one possible candidate for transiently osmotic processes. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  8. Fast thermal transients on valve

    Ferjancic, M.; Stok, B.; Halilovic, M.; Koc, P.; Mole, N.; Otrin, Z.; Kotar, A.

    2007-01-01

    One of the regulatory body methods to supervise nuclear safety of a nuclear power plant is a review of plant modifications and evaluation of their impact on plant operating experience. The Slovenian Nuclear Safety Administration (SNSA) licensed in April 2003 the use of leak-before-break (LBB) methodology in the Krsko NPP for the primary loop including surge line and connecting pipelines with minimal diameter of 6 inch. The SNSA decision based also on fracture mechanics analyses that include direct pipe failure mechanisms such as water hammer, creep damage, erosion and corrosion, fatigue and environmental conditions over the entire life of the plant. The evaluation of the operating transients pointed out, that presumed loadings, used for the LBB analysis, did not incorporate all the fast thermal transients data. For that purpose the SNSA requested Faculty of Mechanical Engineering (FS) in Ljubljana to perform additional analyses. The results of the analysis shall confirm the validity of the LBB analysis. (author)

  9. Pressure transient in liquid lines

    Sun, J.G.; Wang, X.Q.

    1995-01-01

    The pressure surge that results from a step change of flow in liquid pipelines, commonly known as water hammer, was analyzed by an eigenfunction method. A differential-integral Pressure wave equation and a linearized velocity equation were derived from the equations of mass and momentum conservation. Waveform distortion due to viscous dissipation and pipe-wall elastic expansion is characterized by a dimensionless transmission number K. The pressure surge condition, which is mathematically singular, was used in the solution procedure. The exact solutions from numerical calculation of the differential-integral equation provide a complete Pressure transient in the pipe. The problems are also calculated With the general-purpose computer code COMMIX, which solves the exact mass conservation equation and Navier-Stokes equations. These solutions were compared with published experimental results, and agreement was good. The effect of turbulence on the pressure transient is discussed in the light of COMMIX calculational results

  10. Superresolution microscopy with transient binding.

    Molle, Julia; Raab, Mario; Holzmeister, Susanne; Schmitt-Monreal, Daniel; Grohmann, Dina; He, Zhike; Tinnefeld, Philip

    2016-06-01

    For single-molecule localization based superresolution, the concentration of fluorescent labels has to be thinned out. This is commonly achieved by photophysically or photochemically deactivating subsets of molecules. Alternatively, apparent switching of molecules can be achieved by transient binding of fluorescent labels. Here, a diffusing dye yields bright fluorescent spots when binding to the structure of interest. As the binding interaction is weak, the labeling is reversible and the dye ligand construct diffuses back into solution. This approach of achieving superresolution by transient binding (STB) is reviewed in this manuscript. Different realizations of STB are discussed and compared to other localization-based superresolution modalities. We propose the development of labeling strategies that will make STB a highly versatile tool for superresolution microscopy at highest resolution. Copyright © 2015 Elsevier Ltd. All rights reserved.

  11. Transient two-phase performance of LOFT reactor coolant pumps

    Chen, T.H.; Modro, S.M.

    1983-01-01

    Performance characteristics of Loss-of-Fluid Test (LOFT) reactor coolant pumps under transient two-phase flow conditions were obtained based on the analysis of two large and small break loss-of-coolant experiments conducted at the LOFT facility. Emphasis is placed on the evaluation of the transient two-phase flow effects on the LOFT reactor coolant pump performance during the first quadrant operation. The measured pump characteristics are presented as functions of pump void fraction which was determined based on the measured density. The calculated pump characteristics such as pump head, torque (or hydraulic torque), and efficiency are also determined as functions of pump void fractions. The importance of accurate modeling of the reactor coolant pump performance under two-phase conditions is addressed. The analytical pump model, currently used in most reactor analysis codes to predict transient two-phase pump behavior, is assessed

  12. Cernavoda unit2 recirculated cooling water system transient analysis

    Nita, I. P.; Pancef, R.

    2015-01-01

    The paper is an approach to calculate the response of Cernavoda NPP Unit 2 RCW System to transient regimes during normal and abnormal regimes. Then one started to analyse the system response to reactor trip on class III and IV of power, LOCA on class IV of power, LOCA on class III power, LOIA on class IV of power, and LOIA on class III power. Moreover, one analysed the system transient due to requirement of changeover of a RCW operating pump, planned and unplanned changeover. This is the first transient approach to this system that took in consideration all building of the system, obtaining a very large system model, with over 900 pipe, 4 pumps, 50 consumers, 21 control valves. The changeover procedure was required to be analysed in order to change the nominal operating mode for Unit 2, from current 2 pumps in operation to 3 pump operations during summer operating mode. (authors)

  13. Transient heat transfer for forced convection flow of helium gas

    Liu, Qiusheng; Fukuda, Katsuya; Sasaki, Kenji; Yamamoto, Manabu

    1999-01-01

    Transient heat transfer coefficients for forced convection flow of helium gas over a horizontal cylinder were measured using a forced convection test loop. The platinum heater with a diameter of 1.0 mm was heated by electric current with an exponential increase of Q 0 exp(t/τ). It was clarified that the heat transfer coefficient approaches the steady-state one for the period τ over 1 s, and it becomes higher for the period of τ shorter than 1 s. The transient heat transfer shows less dependent on the gas flowing velocity when the period becomes very shorter. Semi-empirical correlations for steady-state and transient heat transfer were developed based on the experimental data. (author)

  14. Upset due to a single particle caused propagated transients in a bulk CMOS microprocessor

    Leavy, J.F.; Hoffmann, L.F.; Shoran, R.W.; Johnson, M.T.

    1991-01-01

    This paper reports on data pattern advances observed in preset, single event upset (SEU) hardened clocked flip-flops, during static Cf-252 exposures on a bulk CMOS microprocessor, that were attributable to particle caused anomalous clock signals, or propagated transients. SPICE simulations established that particle strikes in the output nodes of a clock control logic flip-flop could produce transients of sufficient amplitude and duration to be accepted as legitimate pulses by clock buffers fed by the flip-flop's output nodes. The buffers would then output false clock pulses, thereby advancing the state of the present flip-flops. Masking the clock logic on one of the test chips made the flip-flop data advance cease, confirming the clock logic as the source of the SEU. By introducing N 2 gas, at reduced pressures, into the SEU test chamber to attenuate Cf-252 particle LET's, a 24-26 MeV-cm 2 /mg LET threshold was deduced. Subsequent tests, at the 88-inch cyclotron at Berkeley, established an LET threshold of 30 MeV-cm 2 /mg (283 MeV Cu at 0 degrees) for the generation of false clocks. Cyclotron SEU tests are considered definitive, while Cf-252 data usually is not. However, in this instance Cf-252 tests proved analytically useful, providing SEU characterization data that was both timely and inexpensive

  15. LLL transient-electromagnetics-measurement facility

    Deadrick, F.J.; Miller, E.K.; Hudson, H.G.

    1975-01-01

    The operation and hardware of the Lawrence Livermore Laboratory's transient-electromagnetics (EM)-measurement facility are described. The transient-EM range is useful for determining the time-domain transient responses of structures to incident EM pulses. To illustrate the accuracy and utility of the EM-measurement facility, actual experimental measurements are compared to numerically computed values

  16. Learning from anticipated and abnormal plant transients

    Varnado, B.

    1983-01-01

    A report is given of the American Nuclear Society topical meeting on Anticipated and Abnormal Transients in Light Water Reactors held in Jackson, Wyoming in September 1983. Industry involvement in the evaluation of operating experience, human error contributions, transient management, thermal hydraulic modelling, the role of probabilistic risk assessment and the cost of transient incidents are discussed. (U.K.)

  17. A transient absorption study of allophycocyanin

    Transient dynamics of allophycocyanin trimers and monomers are observed by using the pump-probe, transient absorption technique. The origin of spectral components of the transient absorption spectra is discussed in terms of both kinetics and spectroscopy. We find that the energy gap between the ground and excited ...

  18. Adaptive sampling of AEM transients

    Di Massa, Domenico; Florio, Giovanni; Viezzoli, Andrea

    2016-02-01

    This paper focuses on the sampling of the electromagnetic transient as acquired by airborne time-domain electromagnetic (TDEM) systems. Typically, the sampling of the electromagnetic transient is done using a fixed number of gates whose width grows logarithmically (log-gating). The log-gating has two main benefits: improving the signal to noise (S/N) ratio at late times, when the electromagnetic signal has amplitudes equal or lower than the natural background noise, and ensuring a good resolution at the early times. However, as a result of fixed time gates, the conventional log-gating does not consider any geological variations in the surveyed area, nor the possibly varying characteristics of the measured signal. We show, using synthetic models, how a different, flexible sampling scheme can increase the resolution of resistivity models. We propose a new sampling method, which adapts the gating on the base of the slope variations in the electromagnetic (EM) transient. The use of such an alternative sampling scheme aims to get more accurate inverse models by extracting the geoelectrical information from the measured data in an optimal way.

  19. Transient virulence of emerging pathogens.

    Bolker, Benjamin M; Nanda, Arjun; Shah, Dharmini

    2010-05-06

    Should emerging pathogens be unusually virulent? If so, why? Existing theories of virulence evolution based on a tradeoff between high transmission rates and long infectious periods imply that epidemic growth conditions will select for higher virulence, possibly leading to a transient peak in virulence near the beginning of an epidemic. This transient selection could lead to high virulence in emerging pathogens. Using a simple model of the epidemiological and evolutionary dynamics of emerging pathogens, along with rough estimates of parameters for pathogens such as severe acute respiratory syndrome, West Nile virus and myxomatosis, we estimated the potential magnitude and timing of such transient virulence peaks. Pathogens that are moderately evolvable, highly transmissible, and highly virulent at equilibrium could briefly double their virulence during an epidemic; thus, epidemic-phase selection could contribute significantly to the virulence of emerging pathogens. In order to further assess the potential significance of this mechanism, we bring together data from the literature for the shapes of tradeoff curves for several pathogens (myxomatosis, HIV, and a parasite of Daphnia) and the level of genetic variation for virulence for one (myxomatosis). We discuss the need for better data on tradeoff curves and genetic variance in order to evaluate the plausibility of various scenarios of virulence evolution.

  20. Cortical computations via transient attractors.

    Oliver L C Rourke

    Full Text Available The ability of sensory networks to transiently store information on the scale of seconds can confer many advantages in processing time-varying stimuli. How a network could store information on such intermediate time scales, between typical neurophysiological time scales and those of long-term memory, is typically attributed to persistent neural activity. An alternative mechanism which might allow for such information storage is through temporary modifications to the neural connectivity which decay on the same second-long time scale as the underlying memories. Earlier work that has explored this method has done so by emphasizing one attractor from a limited, pre-defined set. Here, we describe an alternative, a Transient Attractor network, which can learn any pattern presented to it, store several simultaneously, and robustly recall them on demand using targeted probes in a manner reminiscent of Hopfield networks. We hypothesize that such functionality could be usefully embedded within sensory cortex, and allow for a flexibly-gated short-term memory, as well as conferring the ability of the network to perform automatic de-noising, and separation of input signals into distinct perceptual objects. We demonstrate that the stored information can be refreshed to extend storage time, is not sensitive to noise in the system, and can be turned on or off by simple neuromodulation. The diverse capabilities of transient attractors, as well as their resemblance to many features observed in sensory cortex, suggest the possibility that their actions might underlie neural processing in many sensory areas.

  1. Cortical computations via transient attractors.

    Rourke, Oliver L C; Butts, Daniel A

    2017-01-01

    The ability of sensory networks to transiently store information on the scale of seconds can confer many advantages in processing time-varying stimuli. How a network could store information on such intermediate time scales, between typical neurophysiological time scales and those of long-term memory, is typically attributed to persistent neural activity. An alternative mechanism which might allow for such information storage is through temporary modifications to the neural connectivity which decay on the same second-long time scale as the underlying memories. Earlier work that has explored this method has done so by emphasizing one attractor from a limited, pre-defined set. Here, we describe an alternative, a Transient Attractor network, which can learn any pattern presented to it, store several simultaneously, and robustly recall them on demand using targeted probes in a manner reminiscent of Hopfield networks. We hypothesize that such functionality could be usefully embedded within sensory cortex, and allow for a flexibly-gated short-term memory, as well as conferring the ability of the network to perform automatic de-noising, and separation of input signals into distinct perceptual objects. We demonstrate that the stored information can be refreshed to extend storage time, is not sensitive to noise in the system, and can be turned on or off by simple neuromodulation. The diverse capabilities of transient attractors, as well as their resemblance to many features observed in sensory cortex, suggest the possibility that their actions might underlie neural processing in many sensory areas.

  2. Response of dairy cattle to transient voltages and magnetic fields

    Reinemann, D.J.; Laughlin, N.K.; Stetson, L.E.

    1995-01-01

    Stray voltages in dairy facilities have been studied since the 1970's. Previous research using steady-state ac and dc voltages has defined cow-contact voltage levels which may cause behavior and associated production problems. This research was designed to address concerns over possible effects of transient voltages and magnetic fields on dairy cows. Dairy cows response to transient voltages and magnetic fields was measured. The waveforms of the transient voltages applied were: 5 cycles of 60-Hz ac with a total pulse time of 83 ms, 1 cycle of 60-Hz ac with a total pulse time of 16 ms, and 1 cycle of an ac square wave (spiking positive and negative) of 2-ms duration. Alternating magnetic fields were produced by passing 60-Hz ac fundamental frequency with 2nd and 3rd harmonic and random noise components in metal structures around the cows. The maximum magnetic field associated with this current flow was in excess of 4 G. A wide range of sensitivity to transient voltages was observed among cows. Response levels from 24 cows to each transient exposure were normally distributed. No responses to magnetic fields were observed

  3. Bright PanSTARRS Nuclear Transients – what are they?

    Smartt S.

    2012-12-01

    Full Text Available We present an initial analysis of 49 bright transients occurring in the nuclei of galaxies with no previous known Active Galactic Nucleus (AGN. They have been discovered as part of the PanSTARRs 3π survey, and followed up with the Liverpool Telescope. Based on colours, light curve shape, and a small number with optical spectra, these transients seem to fall into three groups. Red/fast transients are nuclear supernovae of various types. Some bright nuclear transients are blue and decay on a timescale of a few months; these may be candidates for tidal disruption events. However most of the events we have found are blue and are either still rising or decaying slowly, on a timescale of years; the few spectra we have show AGN at z ∼ 1. We argue that these transients are background AGN microlensed by stars in foreground galaxies by a factor 10–100. Monitoring such events gives us very promising prospects for measuring the structure of AGN and so testing current theories.

  4. Transient diabetes insipidus in pregnancy

    Gunawardana, Kavinga; Grossman, Ashley

    2015-01-01

    Summary Gestational diabetes insipidus (DI) is a rare complication of pregnancy, usually developing in the third trimester and remitting spontaneously 4–6 weeks post-partum. It is mainly caused by excessive vasopressinase activity, an enzyme expressed by placental trophoblasts which metabolises arginine vasopressin (AVP). Its diagnosis is challenging, and the treatment requires desmopressin. A 38-year-old Chinese woman was referred in the 37th week of her first single-gestation due to polyuria, nocturia and polydipsia. She was known to have gestational diabetes mellitus diagnosed in the second trimester, well-controlled with diet. Her medical history was unremarkable. Physical examination demonstrated decreased skin turgor; her blood pressure was 102/63 mmHg, heart rate 78 beats/min and weight 53 kg (BMI 22.6 kg/m2). Laboratory data revealed low urine osmolality 89 mOsmol/kg (350–1000), serum osmolality 293 mOsmol/kg (278–295), serum sodium 144 mmol/l (135–145), potassium 4.1 mmol/l (3.5–5.0), urea 2.2 mmol/l (2.5–6.7), glucose 3.5 mmol/l and HbA1c 5.3%. Bilirubin, alanine transaminase, alkaline phosphatase and full blood count were normal. The patient was started on desmopressin with improvement in her symptoms, and normalisation of serum and urine osmolality (280 and 310 mOsmol/kg respectively). A fetus was delivered at the 39th week without major problems. After delivery, desmopressin was stopped and she had no further evidence of polyuria, polydipsia or nocturia. Her sodium, serum/urine osmolality at 12-weeks post-partum were normal. A pituitary magnetic resonance imaging (MRI) revealed the neurohypophyseal T1-bright spot situated ectopically, with a normal adenohypophysis and infundibulum. She remains clinically well, currently breastfeeding, and off all medication. This case illustrates some challenges in the diagnosis and management of transient gestational DI. Learning points Gestational DI is a rare complication of

  5. Transient diabetes insipidus in pregnancy.

    Marques, Pedro; Gunawardana, Kavinga; Grossman, Ashley

    2015-01-01

    Gestational diabetes insipidus (DI) is a rare complication of pregnancy, usually developing in the third trimester and remitting spontaneously 4-6 weeks post-partum. It is mainly caused by excessive vasopressinase activity, an enzyme expressed by placental trophoblasts which metabolises arginine vasopressin (AVP). Its diagnosis is challenging, and the treatment requires desmopressin. A 38-year-old Chinese woman was referred in the 37th week of her first single-gestation due to polyuria, nocturia and polydipsia. She was known to have gestational diabetes mellitus diagnosed in the second trimester, well-controlled with diet. Her medical history was unremarkable. Physical examination demonstrated decreased skin turgor; her blood pressure was 102/63 mmHg, heart rate 78 beats/min and weight 53 kg (BMI 22.6 kg/m(2)). Laboratory data revealed low urine osmolality 89 mOsmol/kg (350-1000), serum osmolality 293 mOsmol/kg (278-295), serum sodium 144 mmol/l (135-145), potassium 4.1 mmol/l (3.5-5.0), urea 2.2 mmol/l (2.5-6.7), glucose 3.5 mmol/l and HbA1c 5.3%. Bilirubin, alanine transaminase, alkaline phosphatase and full blood count were normal. The patient was started on desmopressin with improvement in her symptoms, and normalisation of serum and urine osmolality (280 and 310 mOsmol/kg respectively). A fetus was delivered at the 39th week without major problems. After delivery, desmopressin was stopped and she had no further evidence of polyuria, polydipsia or nocturia. Her sodium, serum/urine osmolality at 12-weeks post-partum were normal. A pituitary magnetic resonance imaging (MRI) revealed the neurohypophyseal T1-bright spot situated ectopically, with a normal adenohypophysis and infundibulum. She remains clinically well, currently breastfeeding, and off all medication. This case illustrates some challenges in the diagnosis and management of transient gestational DI. Gestational DI is a rare complication of pregnancy occurring in two to four out of

  6. Search for Transient Gravitational Waves in Coincidence with Short-Duration Radio Transients During 2007-2013

    Abbott, B. P.; Hughey, Brennan; Zanolin, Michele; Szczepanczyk, Marek; Gill, Kiranjyot; Abbott, R.; Abbott, T. D.; Abernathy, M. R.; Acernese, F.; Ackley, K.; hide

    2016-01-01

    We present an archival search for transient gravitational-wave bursts in coincidence with 27 single-pulse triggers from Green Bank Telescope pulsar surveys, using the LIGO (Laser Interferometer Gravitational Wave Observatory), Virgo (Variability of Solar Irradiance and Gravity Oscillations) and GEO (German-UK Interferometric Detector) interferometer network. We also discuss a check for gravitational-wave signals in coincidence with Parkes fast radio bursts using similar methods. Data analyzed in these searches were collected between 2007 and 2013. Possible sources of emission of both short-duration radio signals and transient gravitational-wave emission include star quakes on neutron stars, binary coalescence of neutron stars, and cosmic string cusps. While no evidence for gravitational-wave emission in coincidence with these radio transients was found, the current analysis serves as a prototype for similar future searches using more sensitive second-generation interferometers.

  7. MODELLING OF NON-ROAD TRANSIENT CYCLE

    Martin Kotus

    2013-12-01

    Full Text Available The paper describes the modeling of NRTC (Non-Road Transient Cycle test procedure based on previously measured characteristics of fuel consumption, carbon monoxide (CO, carbon dioxide (CO2, hydrocarbons (HC, nitrogen oxides (NOx and particulates (PM production. It makes possible to compare the current technical condition of an internal combustion engine of an agricultural tractor with its previous state or other tractor’s engine. Based on measured characteristics, it is also possible to model any other cycle without further measurements (NRSC test procedure, cycle for specific conditions – mountain tractor, etc.. The result may thus contribute to improving the environment by reducing the production of harmful substances emitted into the air and save money due to reduced fuel consumption.

  8. The OECD/NEA/NSC PBMR 400 MW coupled neutronics thermal hydraulics transient benchmark: transient results - 290

    Strydom, G.; Reitsma, F.; Ngeleka, P.T.; Ivanov, K.N.

    2010-01-01

    The PBMR is a High-Temperature Gas-cooled Reactor (HTGR) concept developed to be built in South Africa. The analysis tools used for core neutronic design and core safety analysis need to be verified and validated, and code-to-code comparisons are an essential part of the V and V plans. As part of this plan the PBMR 400 MWth design and a representative set of transient exercises are defined as an OECD benchmark. The scope of the benchmark is to establish a series of well defined multi-dimensional computational benchmark problems with a common given set of cross sections, to compare methods and tools in coupled neutronics and thermal hydraulics analysis with a specific focus on transient events. This paper describes the current status of the benchmark project and shows the results for the six transient exercises, consisting of three Loss of Cooling Accidents, two Control Rod Withdrawal transients, a power load-follow transient, and a Helium over-cooling Accident. The participants' results are compared using a statistical method and possible areas of future code improvement are identified. (authors)

  9. Heavy Ion Microbeam and Broadbeam Transients in SiGe HBTs

    Pellish, Jonathan A.; Reed, Robert A.; McMorrow, Dale; Vizkelethy, Gyorgy; Dodd, Paul E.; Ferlet-Cavrois, Veronique; Baggio, Jacques; Paillet, Philippe; Duhamel, Olivier; Phillips, Stanley D.; hide

    2009-01-01

    SiGe HBT heavy ion current transients are measured using microbeam and both high- and low-energy broadbeam sources. These new data provide detailed insight into the effects of ion range, LET, and strike location.

  10. Effects of transient conditions on exhaust emissions from two non-road diesel engines

    Lindgren, M.; Hansson, P.-A.

    2004-01-01

    Growing interest in quantifying and reducing the amount of engine emissions of carbon monoxide, hydrocarbons, and nitrogen oxides loading the environment has led to increasingly tighter environmental regulations. However, current non-road emission standards are performed according to a steady-state test cycle, which does not include transient effects and thus underestimates the amount of emissions produced in real use of the engine. This study quantifies the effects of transients in engine speed and torque on the fuel consumption and emissions from two diesel engines intended for non-road mobile machinery. Fuel consumption and emissions from the engines were measured in an engine dynamometer during various transient load conditions. The results showed that during fast transients, the measured fuel consumption was up to twice as high as the corresponding steady-state load conditions. The effects of transients on emissions of nitrogen oxides were even greater, as were the effects of transient load increase with increasing transient conditions i. e. rate of change. The results showed that the effect of transients on fuel consumption and emissions were also dependent on the type of diesel injection pump and the engine equipment used. Furthermore, the results indicated that the air/fuel ratio was an important contributor to the emission formation process during transient loads. (Author)

  11. Impact Assessment of Various Methods for Control of Synchronous Generator Excitation on Quality of Transient Processes

    Y. D. Filipchik

    2011-01-01

    Full Text Available The paper considers an impact of various methods for control of an exciting current pertaining to a synchronous generator on the nature of transient processes. A control algorithm for the exciting current in relation to changes in sliding and acceleration of a generator rotor has been proposed in the paper. The algorithm makes it possible to improve quality of the transient processes due to reduction of oscillation range concerning as an active power so a δ-angle as well.

  12. Transient hyperthyroidism of hyperemesis gravidarum.

    Tan, Jackie Y L; Loh, Keh Chuan; Yeo, George S H; Chee, Yam Cheng

    2002-06-01

    To characterise the clinical, biochemical and thyroid antibody profile in women with transient hyperthyroidism of hyperemesis gravidarum. Prospective observational study. Hospital inpatient gynaecological ward. Women admitted with hyperemesis gravidarum and found to have hyperthyroidism. Fifty-three women were admitted with hyperemesis gravidarum and were found to have hyperthyroidism. Each woman was examined for clinical signs of thyroid disease and underwent investigations including urea, creatinine, electrolytes, liver function test, thyroid antibody profile and serial thyroid function test until normalisation. Gestation at which thyroid function normalised, clinical and thyroid antibody profile and pregnancy outcome (birthweight, gestation at delivery and Apgar score at 5 minutes). Full data were available for 44 women. Free T4 levels normalised by 15 weeks of gestation in the 39 women with transient hyperthyroidism while TSH remained suppressed until 19 weeks of gestation. None of these women were clinically hyperthyroid. Thyroid antibodies were not found in most of them. Median birthweight in the infants of mothers who experienced weight loss of > 5% of their pre-pregnancy weight was lower compared with those of women who did not (P = 0.093). Five women were diagnosed with Graves' disease based on clinical features and thyroid antibody profile. In transient hyperthyroidism of hyperemesis gravidarum, thyroid function normalises by the middle of the second trimester without anti-thyroid treatment. Clinically overt hyperthyroidism and thyroid antibodies are usually absent. Apart from a non-significant trend towards lower birthweights in the infants of mothers who experienced significant weight loss, pregnancy outcome was generally good. Routine assessment of thyroid function is unnecessary for women with hyperemesis gravidarum in the absence of any clinical features of hyperthyroidism.

  13. FIRST RESULTS FROM THE CATALINA REAL-TIME TRANSIENT SURVEY

    Drake, A. J.; Djorgovski, S. G.; Mahabal, A.; Graham, M. J.; Williams, R.; Beshore, E.; Larson, S.; Boattini, A.; Gibbs, A.; Hill, R.; Kowalski, R.; Christensen, E.; Catelan, M.

    2009-01-01

    We report on the results from the first six months of the Catalina Real-Time Transient Survey (CRTS). In order to search for optical transients (OTs) with timescales of minutes to years, the CRTS analyses data from the Catalina Sky Survey which repeatedly covers 26,000 of square degrees on the sky. The CRTS provides a public stream of transients that are bright enough to be followed up using small telescopes. Since the beginning of the survey, all CRTS transients have been made available to astronomers around the world in real time using HTML tables,RSS feeds, and VOEvents. As part of our public outreach program, the detections are now also available in Keyhole Markup Language through Google Sky. The initial discoveries include over 350 unique OTs rising more than 2 mag from past measurements. Sixty two of these are classified as supernovae (SNe), based on light curves, prior deep imaging and spectroscopic data. Seventy seven are due to cataclysmic variables (CVs; only 13 previously known), while an additional 100 transients were too infrequently sampled to distinguish between faint CVs and SNe. The remaining OTs include active galactic nucleus, blazars, high-proper-motions stars, highly variable stars (such as UV Ceti stars), and transients of an unknown nature. Our results suggest that there is a large population of SNe missed by many current SN surveys because of selection biases. These objects appear to be associated with faint host galaxies. We also discuss the unexpected discovery of white dwarf binary systems through dramatic eclipses.

  14. Current limiting capability of diffused resistors

    Shedd, W.; Cappelli, J.

    1979-01-01

    An experimental evaluation of the current limiting capability of dielectrically isolated diffused resistors at transient ionizing dose rates up to 6*10 12 rads(Si)/sec is presented. Existing theoretical predictions of the transient response of diffused resistors are summarized and compared to the experimentally measured values. The test resistors used allow the effects of sheet resistance and geometry on the transient response to be determined. The experimental results show that typical dielectrically isolated diffused resistors maintain adequate current limiting capability for use in radiation hardened integrated circuits

  15. The course of transient hypochondriasis.

    Barsky, A J; Cleary, P D; Sarnie, M K; Klerman, G L

    1993-03-01

    This study examined the longitudinal course of patients known to have had a previous episode of transient hypochondriasis. Twenty-two transiently hypochondriacal patients and 24 nonhypochondriacal patients from the same general medical clinic were reexamined after an average of 22 months with the use of self-report questionnaires, structured diagnostic interviews, and medical record review. The hypochondriacal patients continued to manifest significantly more hypochondriacal symptoms, more somatization, and more psychopathological symptoms at follow-up. They also reported significantly more amplification of bodily sensations and more functional disability and utilized more medical care. These differences persisted after control for differences in medical morbidity and marital status. Only one hypochondriacal patient, however, had a DSM-III-R diagnosis of hypochondriasis at follow-up. Multivariate analyses revealed that the only significant predictors of hypochondriacal symptoms at follow-up were hypochondriacal symptoms and the tendency to amplify bodily sensations at the baseline evaluation. Hypochondriacal symptoms appear to have some temporal stability: patients who experienced hypochondriacal episodes at the beginning of the study were significantly more hypochondriacal 2 years later than comparison patients. They were not, however, any more likely to develop DSM-III-R-defined hypochondriasis. Thus, hypochondriacal symptoms may be distinct from the axis I disorder. The data are also compatible with the hypothesis that preexisting amplification of bodily sensations is an important predictor of subsequent hypochondriacal symptoms.

  16. Transient trimethylaminuria related to menstruation

    Shimizu, Makiko; Cashman, John R; Yamazaki, Hiroshi

    2007-01-01

    Background Trimethylaminuria, or fish odor syndrome, includes a transient or mild malodor caused by an excessive amount of malodorous trimethylamine as a result of body secretions. Herein, we describe data to support the proposal that menses can be an additional factor causing transient trimethylaminuria in self-reported subjects suffering from malodor and even in healthy women harboring functionally active flavin-containing monooxygenase 3 (FMO3). Methods FMO3 metabolic capacity (conversion of trimethylamine to trimethylamine N-oxide) was defined as the urinary ratio of trimethylamine N-oxide to total trimethylamine. Results Self-reported Case (A) that was homozygous for inactive Arg500stop FMO3, showed decreased metabolic capacity of FMO3 (i.e., ~10% the unaffected metabolic capacity) during 120 days of observation. For Case (B) that was homozygous for common [Glu158Lys; Glu308Gly] FMO3 polymorphisms, metabolic capacity of FMO3 was almost ~90%, except for a few days surrounding menstruation showing 90%) metabolic capacity, however, on days around menstruation the FMO3 metabolic capacity was decreased to ~60–70%. Conclusion Together, these results indicate that abnormal FMO3 capacity is caused by menstruation particularly in the presence, in homozygous form, of mild genetic variants such as [Glu158Lys; Glu308Gly] that cause a reduced FMO3 function. PMID:17257434

  17. Intramuscular psoas lengthening during single-event multi-level surgery fails to improve hip dynamics in children with spastic diplegia. Clinical and kinematic outcomes in the short- and medium-terms.

    Mallet, C; Simon, A-L; Ilharreborde, B; Presedo, A; Mazda, K; Penneçot, G-F

    2016-06-01

    In children with spastic diplegia, hip extension in terminal stance is limited by retraction of the psoas muscle, which decreases stride propulsion and step length on the contralateral side. Whether intramuscular psoas lengthening (IMPL) is effective remains controversial. The objective of this study was to assess the impact of IMPL as a component of single-event multi-level surgery (SEMLS) on spatial and temporal gait parameters, clinical hip flexion deformity, and hip flexion kinematics. IMPL as part of SEMLS does not significantly improve hip flexion kinematics. A retrospective review was conducted of the medical charts of consecutive ambulatory children with cerebral palsy who had clinical hip flexion deformity (>10°) with more than 10° of excess hip flexion in terminal stance and who underwent SEMLS. The groups with and without IMPL were compared. Preoperative values of the clinical hip flexion contracture, hip flexion kinematics in terminal stance, and spatial and temporal gait parameters were compared to the values recorded after a mean postoperative follow-up of 2.4±2.0 years (range, 1.0-8.7 years). Follow-up was longer than 3 years in 6 patients. Of 47 lower limbs (in 34 patients) included in the analysis, 15 were managed with IMPL. There were no significant between-group differences at baseline. Surgery was followed in all limbs by significant decreases in kinematic hip flexion and in the Gillette Gait Index. In the IMPL group, significant improvements occurred in clinical hip flexion deformity, walking speed, and step length. The improvement in kinematic hip extension was not significantly different between the two groups. Crouch gait recurred in 3 (8%) patients. The improvement in kinematic hip extension in terminal stance was not significantly influenced by IMPL but was, instead, chiefly dependent on improved knee extension and on the position of the ground reaction vector after SEMLS. IMPL remains indicated only when the clinical hip flexion

  18. Molten fuel motion during a fast-reactor overpower transient

    Kolesar, D.C.; Padilla, A. Jr.; Lewis, C.H.; Waltar, A.E.

    1976-01-01

    Mechanistic models for postfailure fuel behavior during hypothetical transient overpower accidents are currently being developed for incorporation into the MELT accident analysis code. A new model for the fuel-coolant interaction and for the motion of fuel in the coolant channel has been developed and incorporated into the MELT-III code. A major limitation of the mechanistic fuel motion model is its dependence on the uniform interaction region of MELT-III. Consequently, a parallel effort is currently in progress to incorporate a non-uniform interaction region into the MELT code. Combination of the fuel motion and the nonuniform interaction region models will provide the framework for development of a mechanistic fuel plateout/blockage model for transient overpower accidents

  19. Transients of Water Distribution and Transport in PEFCs

    Hussaini, Irfan

    2008-01-01

    Response of PEM fuel cells to a step-change in load is investigated experimentally in this work. Voltage undershoot, a characteristic feature of such transient response, is shown to be due to transients of water distribution in membrane phase occurring at sub-second time scales. Use of humidified reactants as a means to control magnitude of voltage undershoot has been demonstrated. Constant stoichiometry operation under certain current-step conditions is found to result in reactant starvation, potentially leading to cell shut down. Further, response under step decrease in current density has been explored to determine existence of hysteresis. Under sufficiently humidified conditions, response under forward and reverse step changes are found to be symmetric, but under low RH conditions, voltage undershoot is found to be twice as large as the overshoot. © The Electrochemical Society.

  20. Transients of Water Distribution and Transport in PEM Fuel Cells

    Hussaini, Irfan S.; Wang, Chao-Yang

    2009-01-01

    The response of polymer electrolyte membrane (PEM) fuel cells to a step change in load is investigated experimentally in this work. Voltage undershoot, a characteristic feature of transient response following a step increase in current, is due to transients of water distribution in the membrane and ionomers occurring at subsecond time scales. The use of humidified reactants as a means to control the magnitude of voltage undershoot is demonstrated. Further, the response under a step decrease in current density is explored to determine the existence of hysteresis. Under sufficiently humidified conditions, the responses under forward and reverse step changes are symmetric, but under low relative humidity conditions, voltage undershoot is twice as large as the overshoot. © 2009 The Electrochemical Society.