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Sample records for single zno nw

  1. Single ZnO nanowire-PZT optothermal field effect transistors.

    Science.gov (United States)

    Hsieh, Chun-Yi; Lu, Meng-Lin; Chen, Ju-Ying; Chen, Yung-Ting; Chen, Yang-Fang; Shih, Wan Y; Shih, Wei-Heng

    2012-09-07

    A new type of pyroelectric field effect transistor based on a composite consisting of single zinc oxide nanowire and lead zirconate titanate (ZnO NW-PZT) has been developed. Under infrared (IR) laser illumination, the transconductance of the ZnO NW can be modulated by optothermal gating. The drain current can be increased or decreased by IR illumination depending on the polarization orientation of the Pb(Zr(0.3)Ti(0.7))O(3) (PZT) substrate. Furthermore, by combining the photocurrent behavior in the UV range and the optothermal gating effect in the IR range, the wide spectrum of response of current by light offers a variety of opportunities for nanoscale optoelectronic devices.

  2. Polarized Raman scattering of single ZnO nanorod

    International Nuclear Information System (INIS)

    Yu, J. L.; Lai, Y. F.; Wang, Y. Z.; Cheng, S. Y.; Chen, Y. H.

    2014-01-01

    Polarized Raman scattering measurement on single wurtzite c-plane (001) ZnO nanorod grown by hydrothermal method has been performed at room temperature. The polarization dependence of the intensity of the Raman scattering for the phonon modes A 1 (TO), E 1 (TO), and E 2 high in the ZnO nanorod are obtained. The deviations of polarization-dependent Raman spectroscopy from the prediction of Raman selection rules are observed, which can be attributed to the structure defects in the ZnO nanorod as confirmed by the comparison of the transmission electron microscopy, photoluminescence spectra as well as the polarization dependent Raman signal of the annealed and unannealed ZnO nanorod. The Raman tensor elements of A 1 (TO) and E 1 (TO) phonon modes normalized to that of the E 2 high phonon mode are |a/d|=0.32±0.01, |b/d|=0.49±0.02, and |c/d|=0.23±0.01 for the unannealed ZnO nanorod, and |a/d|=0.33±0.01, |b/d|=0.45±0.01, and |c/d|=0.20±0.01 for the annealed ZnO nanorod, which shows strong anisotropy compared to that of bulk ZnO epilayer

  3. Giant negative photoresistance of ZnO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Barzola-Quiquia, Jose; Esquinazi, Pablo [Division of Superconductivity and Magnetism, University of Leipzig (Germany); Heluani, Silvia [Laboratorio de Fisica del Solido, FCEyT, Universidad Nacional de Tucuman, 4000 S. M. de Tucuman (Argentina); Villafuerte, Manuel [Dept. de Fisica, FCEyT, Universidad Nacional de Tucuman (Argentina); CONICET, Tucuman (Argentina); Poeppl, Andreas [Division of Magnetic Resonance of Complex Quantum Solids, University of Leipzig, D-04103 Leipzig (Germany)

    2011-07-01

    ZnO is a wide band gap semiconductor exhibiting the largest charge-carrier mobility among oxides. ZnO is a material with potential applications for short-wavelength optoelectronic devices, as a blue light emitting diodes and in spintronics. In this contribution we have measured the temperature dependence (30 K < T < 300 K) of the electrical resistance of ZnO single crystals prepared by hydrothermal method in darkness and under the influence of light in the ultraviolet range. The resistance decreases several orders of magnitude at temperatures T < 200 K after illumination. Electron paramagnetic resonance studies under illumination reveal that the excitation of Li acceptor impurities is the origin for the giant negative photoresistance effect. Permanent photoresistance effect is also observed, which remains many hours after leaving the crystal in darkness.

  4. Wafer-Scale High-Throughput Ordered Growth of Vertically Aligned ZnO Nanowire Arrays

    KAUST Repository

    Wei, Yaguang; Wu, Wenzhuo; Guo, Rui; Yuan, Dajun; Das, Suman; Wang, Zhong Lin

    2010-01-01

    -synthesized morphology. The development of textured ZnO seed layers for replacing single crystalline GaN and ZnO substrates extends the large-scale fabrication of vertically aligned ZnO NW arrays on substrates of other materials, such as polymers, Si, and glass

  5. Defect spectroscopy of single ZnO microwires

    Science.gov (United States)

    Villafuerte, M.; Ferreyra, J. M.; Zapata, C.; Barzola-Quiquia, J.; Iikawa, F.; Esquinazi, P.; Heluani, S. P.; de Lima, M. M.; Cantarero, A.

    2014-04-01

    The point defects of single ZnO microwires grown by carbothermal reduction were studied by microphotoluminescence, photoresistance excitation spectra, and resistance as a function of the temperature. We found the deep level defect density profile along the microwire showing that the concentration of defects decreases from the base to the tip of the microwires and this effect correlates with a band gap narrowing. The results show a characteristic deep defect levels inside the gap at 0.88 eV from the top of the VB. The resistance as a function of the temperature shows defect levels next to the bottom of the CB at 110 meV and a mean defect concentration of 4 × 1018 cm-3. This combination of techniques allows us to study the band gap values and defects states inside the gap in single ZnO microwires and opens the possibility to be used as a defect spectroscopy method.

  6. Cathodoluminescence of single ZnO nanorod heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Piechal, Bernard; Donatini, Fabrice; Dang, Le Si [CNRS-CEA-UJF joint group ' ' Nanophysique et Semiconducteurs' ' , Universite Joseph Fourier (CNRS UMR 5588), Saint Martin d' Heres (France); Yoo, Jinkyoung; Yi, Gyu-Chul [National CRI Center for Semiconductor Nanorods and Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang (Korea); Elshaer, Abdelhamid; Mofor, A.C.; Bakin, Andrey; Waag, Andreas [Institute of Semiconductor Technology (IHT), TU Braunschweig (Germany)

    2007-05-15

    Optical properties of ZnO-based single nanorods are probed by cathodoluminescence (CL) measurements at T = 5 K. We observe a variation of the ZnO near band edge CL by three orders of magnitude along the nanorod axis, accompanied by a spectral blueshift of 10-30 meV. This indicates a rather poor structural quality of the nanorod bottom part, close to the substrate. ZnO/ZnMgO quantum wells grown on top of ZnO nanorods are found to exhibit much stronger confinement effects as compared to their two-dimensional counterparts, suggesting a reduced spontaneous and piezoelectric polarization effects. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  7. Single-Crystal Mesoporous ZnO Thin Films Composed of Nanowalls

    KAUST Repository

    Wang, Xudong

    2009-02-05

    This paper presents a controlled, large scale fabrication of mesoporous ZnO thin films. The entire ZnO mesoporous film is one piece of a single crystal, while high porosity made of nanowalls is present. The growth mechanism was proposed in comparison with the growth of ZnO nanowires. The ZnO mesoporous film was successfully applied as a gas sensor. The fabrication and growth analysis of the mesoporous ZnO thin film gi ve general guidance for the controlled growth of nanostructures. It also pro vides a unique structure with a superhigh surface-to-volume ratio for surface-related applications. © 2009 American Chemical Society.

  8. Phonon Confinement Induced Non-Concomitant Near-Infrared Emission along a Single ZnO Nanowire: Spatial Evolution Study of Phononic and Photonic Properties

    Directory of Open Access Journals (Sweden)

    Po-Hsun Shih

    2017-10-01

    Full Text Available The impact of mixed defects on ZnO phononic and photonic properties at the nanoscale is only now being investigated. Here we report an effective strategy to study the distribution of defects along the growth direction of a single ZnO nanowire (NW, performed qualitatively as well as quantitatively using energy dispersive spectroscopy (EDS, confocal Raman-, and photoluminescence (PL-mapping technique. A non-concomitant near-infrared (NIR emission of 1.53 ± 0.01 eV was observed near the bottom region of 2.05 ± 0.05 μm along a single ZnO NW and could be successfully explained by the radiative recombination of shallowly trapped electrons V_O^(** with deeply trapped holes at V_Zn^''. A linear chain model modified from a phonon confinement model was used to describe the growth of short-range correlations between the mean distance of defects and its evolution with spatial position along the axial growth direction by fitting the E2H mode. Our results are expected to provide new insights into improving the study of the photonic and photonic properties of a single nanowire.

  9. Growth of Single- and Bilayer ZnO on Au(111) and Interaction with Copper

    Energy Technology Data Exchange (ETDEWEB)

    Deng, Xingyi; Yao, Kun; Sun, Keju; Li, Wei-Xue; Lee, Junseok; Matranga, Christopher

    2013-05-02

    The stoichiometric single- and bi-layer ZnO(0001) have been prepared by reactive deposition of Zn on Au(111) and studied in detail with X-ray photoelectron spectroscopy, scanning tunneling microscopy, and density functional theory calculations. Both single- and bi-layer ZnO(0001) adopt a planar, graphite-like structure similar to freestanding ZnO(0001) due to the weak van der Waals interactions dominating their adhesion with the Au(111) substrate. At higher temperature, the single-layer ZnO(0001) converts gradually to bi-layer ZnO(0001) due to the twice stronger interaction between two ZnO layers than the interfacial adhesion of ZnO with Au substrate. It is found that Cu atoms on the surface of bi-layer ZnO(0001) are mobile with a diffusion barrier of 0.31 eV, and likely to agglomerate and form nanosized particles at low coverages; while Cu atoms tend to penetrate a single layer of ZnO(0001) with a barrier of 0.10 eV, resulting in a Cu free surface.

  10. Gate-Tunable Spin Exchange Interactions and Inversion of Magnetoresistance in Single Ferromagnetic ZnO Nanowires.

    Science.gov (United States)

    Modepalli, Vijayakumar; Jin, Mi-Jin; Park, Jungmin; Jo, Junhyeon; Kim, Ji-Hyun; Baik, Jeong Min; Seo, Changwon; Kim, Jeongyong; Yoo, Jung-Woo

    2016-04-26

    Electrical control of ferromagnetism in semiconductor nanostructures offers the promise of nonvolatile functionality in future semiconductor spintronics. Here, we demonstrate a dramatic gate-induced change of ferromagnetism in ZnO nanowire (NW) field-effect transistors (FETs). Ferromagnetism in our ZnO NWs arose from oxygen vacancies, which constitute deep levels hosting unpaired electron spins. The magnetic transition temperature of the studied ZnO NWs was estimated to be well above room temperature. The in situ UV confocal photoluminescence (PL) study confirmed oxygen vacancy mediated ferromagnetism in the studied ZnO NW FET devices. Both the estimated carrier concentration and temperature-dependent conductivity reveal the studied ZnO NWs are at the crossover of the metal-insulator transition. In particular, gate-induced modulation of the carrier concentration in the ZnO NW FET significantly alters carrier-mediated exchange interactions, which causes even inversion of magnetoresistance (MR) from negative to positive values. Upon sweeping the gate bias from -40 to +50 V, the MRs estimated at 2 K and 2 T were changed from -11.3% to +4.1%. Detailed analysis on the gate-dependent MR behavior clearly showed enhanced spin splitting energy with increasing carrier concentration. Gate-voltage-dependent PL spectra of an individual NW device confirmed the localization of oxygen vacancy-induced spins, indicating that gate-tunable indirect exchange coupling between localized magnetic moments played an important role in the remarkable change of the MR.

  11. Catalyst growth of single crystal aligned ZnO nanorods on ZnO thin films

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Dongxu; Andreazza, Caroline; Andreazza, Pascal [Centre de Recherche sur la Matiere Divisee, CNRS-Universite d' Orleans, 1b rue de la Ferollerie, 45071 Orleans cedex 2 (France)

    2005-02-01

    One dimensional ZnO nanorods were successfully fabricated on Si substrates via a simple physical vapor-phase transport method at 950 C. A ZnO shell covered Au/Zn alloy is assumed as the nucleation site, then ZnO nanorods grow following a vapor-solid (VS) process. In order to guide the nanorod growth a c-axis oriented ZnO thin film and Au catalyst were first deposited on Si (100) surface. SEM images show nanorods grown on this substrate are vertical to the substrate surface. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  12. Electrical transport properties of single ZnO nanorods

    International Nuclear Information System (INIS)

    Heo, Y.W.; Tien, L.C.; Norton, D.P.; Kang, B.S.; Ren, F.; Gila, B.P.; Pearton, S.J.

    2004-01-01

    Single ZnO nanorods with diameters of ∼130 nm were grown on Au-coated Al 2 O 3 substrates by catalyst-driven molecular beam epitaxy. Individual nanorods were removed from the substrate and placed between Ohmic contact pads and the current-voltage characteristics measured as a function of temperature and gas ambient. In the temperature range from 25 to 150 deg. C, the resistivity of nanorods treated in H 2 at 400 deg. C prior to measurement showed an activation energy of 0.089±0.02 eV and was insensitive to the ambient used (C 2 H 4 ,N 2 O,O 2 or 10% H 2 in N 2 ). By sharp contrast, the conductivity of nanorods not treated in H 2 was sensitive to trace concentrations of gases in the measurement ambient even at room temperature, demonstrating their potential as gas sensors

  13. Single-Crystal Mesoporous ZnO Thin Films Composed of Nanowalls

    KAUST Repository

    Wang, Xudong; Ding, Yong; Li, Zhou; Song, Jinhui; Wang, Zhong Lin

    2009-01-01

    This paper presents a controlled, large scale fabrication of mesoporous ZnO thin films. The entire ZnO mesoporous film is one piece of a single crystal, while high porosity made of nanowalls is present. The growth mechanism was proposed

  14. Single and couple doping ZnO nanocrystals characterized by positron techniques

    International Nuclear Information System (INIS)

    Pasang, Tenzin; Namratha, Keerthiraj; Byrappa, Kullaiah; Guagliardo, Paul; Ranganathaiah, Chikkakuntappa; Samarin, S; Williams, J F

    2015-01-01

    Zinc oxide (ZnO) nanocrystals have been synthesized using a mild hydrothermal process using low temperatures and pressures with the advantages of free growth catalyst, low cost and alternative technology. Positron annihilation lifetime spectroscopy and coincidence Doppler broadening (CDB) spectroscopic methods have been used to investigate the roles of single- and co-dopants and native defects of the ZnO nanocrystals controlled by the synthesis process. It is shown that single Ag 1+ and Pd 2+ dopants occupy interstitial sites of the ZnO lattice and single Ru 3+ doping replaces Zn vacancies substitutionally with a significant effect on the CDB momentum ratio curves when compared using ZnO as the reference spectrum. The co-doping of the ZnO lattice with (Sn 4+ + Co 2+ ) shows similar CDB ratios as Ru 3+ single-doping. Also co-doping with (Ag 1+ + Pd 2+ ) or (Ag 1+ + W 6+ ) shows significant decreases in the band gap energy up to about 12.6% compared to single doping. The momentum ratio curves, referenced to undoped ZnO, indicate dopants in interstitial and substitutional sites. The presence of transition metal ions interstitially will trap electrons which resist the recombination of electrons and in turn affect the conductivity of the material. (paper)

  15. Single and couple doping ZnO nanocrystals characterized by positron techniques

    Science.gov (United States)

    Pasang, Tenzin; Namratha, Keerthiraj; Guagliardo, Paul; Byrappa, Kullaiah; Ranganathaiah, Chikkakuntappa; Samarin, S.; Williams, J. F.

    2015-04-01

    Zinc oxide (ZnO) nanocrystals have been synthesized using a mild hydrothermal process using low temperatures and pressures with the advantages of free growth catalyst, low cost and alternative technology. Positron annihilation lifetime spectroscopy and coincidence Doppler broadening (CDB) spectroscopic methods have been used to investigate the roles of single- and co-dopants and native defects of the ZnO nanocrystals controlled by the synthesis process. It is shown that single Ag1+ and Pd2+ dopants occupy interstitial sites of the ZnO lattice and single Ru3+ doping replaces Zn vacancies substitutionally with a significant effect on the CDB momentum ratio curves when compared using ZnO as the reference spectrum. The co-doping of the ZnO lattice with (Sn4+ + Co2+) shows similar CDB ratios as Ru3+ single-doping. Also co-doping with (Ag1+ + Pd2+) or (Ag1+ + W6+) shows significant decreases in the band gap energy up to about 12.6% compared to single doping. The momentum ratio curves, referenced to undoped ZnO, indicate dopants in interstitial and substitutional sites. The presence of transition metal ions interstitially will trap electrons which resist the recombination of electrons and in turn affect the conductivity of the material.

  16. Encapsulation of nanoparticles into single-crystal ZnO nanorods and microrods

    Directory of Open Access Journals (Sweden)

    Jinzhang Liu

    2014-04-01

    Full Text Available One-dimensional single crystal incorporating functional nanoparticles of other materials could be an interesting platform for various applications. We studied the encapsulation of nanoparticles into single-crystal ZnO nanorods by exploiting the crystal growth of ZnO in aqueous solution. Two types of nanodiamonds with mean diameters of 10 nm and 40 nm, respectively, and polymer nanobeads with size of 200 nm have been used to study the encapsulation process. It was found that by regrowing these ZnO nanorods with nanoparticles attached to their surfaces, a full encapsulation of nanoparticles into nanorods can be achieved. We demonstrate that our low-temperature aqueous solution growth of ZnO nanorods do not affect or cause degradation of the nanoparticles of either inorganic or organic materials. This new growth method opens the way to a plethora of applications combining the properties of single crystal host and encapsulated nanoparticles. We perform micro-photoluminescence measurement on a single ZnO nanorod containing luminescent nanodiamonds and the spectrum has a different shape from that of naked nanodiamonds, revealing the cavity effect of ZnO nanorod.

  17. Encapsulation of nanoparticles into single-crystal ZnO nanorods and microrods.

    Science.gov (United States)

    Liu, Jinzhang; Notarianni, Marco; Rintoul, Llew; Motta, Nunzio

    2014-01-01

    One-dimensional single crystal incorporating functional nanoparticles of other materials could be an interesting platform for various applications. We studied the encapsulation of nanoparticles into single-crystal ZnO nanorods by exploiting the crystal growth of ZnO in aqueous solution. Two types of nanodiamonds with mean diameters of 10 nm and 40 nm, respectively, and polymer nanobeads with size of 200 nm have been used to study the encapsulation process. It was found that by regrowing these ZnO nanorods with nanoparticles attached to their surfaces, a full encapsulation of nanoparticles into nanorods can be achieved. We demonstrate that our low-temperature aqueous solution growth of ZnO nanorods do not affect or cause degradation of the nanoparticles of either inorganic or organic materials. This new growth method opens the way to a plethora of applications combining the properties of single crystal host and encapsulated nanoparticles. We perform micro-photoluminescence measurement on a single ZnO nanorod containing luminescent nanodiamonds and the spectrum has a different shape from that of naked nanodiamonds, revealing the cavity effect of ZnO nanorod.

  18. ZnO thin films on single carbon fibres fabricated by Pulsed Laser Deposition (PLD)

    Energy Technology Data Exchange (ETDEWEB)

    Krämer, André; Engel, Sebastian [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Sangiorgi, Nicola [Institute of Science and Technology for Ceramics – National Research Council of Italy (CNR-ISTEC), via Granarolo 64, 48018 Faenza, RA (Italy); Department of Chemical Science and Technologies, University of Rome Tor Vergata, via della Ricerca Scientifica, 00133 Rome (Italy); Sanson, Alessandra [Institute of Science and Technology for Ceramics – National Research Council of Italy (CNR-ISTEC), via Granarolo 64, 48018 Faenza, RA (Italy); Bartolomé, Jose F. [Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), C/Sor Juana Inés de la Cruz 3, 28049 Madrid (Spain); Gräf, Stephan, E-mail: stephan.graef@uni-jena.de [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Müller, Frank A. [Otto Schott Institute of Materials Research (OSIM), Friedrich Schiller University Jena, Löbdergraben 32, 07743 Jena (Germany); Center for Energy and Environmental Chemistry Jena (CEEC Jena), Friedrich Schiller University Jena, Philosophenweg 7a, 07743 Jena (Germany)

    2017-03-31

    Highlights: • Carbon fibres were entirely coated with thin films consisting of aligned ZnO crystals. • A Q-switched CO2 laser was utilised as radiation source. • Suitability of ZnO thin films on carbon fibres as photo anodes for DSSC was studied. - Abstract: Single carbon fibres were 360° coated with zinc oxide (ZnO) thin films by pulsed laser deposition using a Q-switched CO{sub 2} laser with a pulse duration τ ≈ 300 ns, a wavelength λ = 10.59 μm, a repetition frequency f{sub rep} = 800 Hz and a peak power P{sub peak} = 15 kW in combination with a 3-step-deposition technique. In a first set of experiments, the deposition process was optimised by investigating the crystallinity of ZnO films on silicon and polished stainless steel substrates. Here, the influence of the substrate temperature and of the oxygen partial pressure of the background gas were characterised by scanning electron microscopy and X-ray diffraction analyses. ZnO coated carbon fibres and conductive glass sheets were used to prepare photo anodes for dye-sensitised solar cells in order to investigate their suitability for energy conversion devices. To obtain a deeper insight of the electronic behaviour at the interface between ZnO and substrate I–V measurements were performed.

  19. Fabricating ZnO single microwire light-emitting diode with transparent conductive ITO film

    International Nuclear Information System (INIS)

    Xu, Yingtian; Dai, Jun; Shi, Zhifeng; Long, Beihong; Wu, Bin; Cai, Xupu; Chu, Xianwei; Du, Guotong; Zhang, Baolin; Yin, Jingzhi

    2014-01-01

    In this paper, n-ZnO single microwire/p + -Si heterojunction LEDs are fabricated using the transparent conductive ITO film as an electrode. A distinct UV emission resulting from free exciton recombination in a ZnO single microwire is observed in the electroluminescence. Size difference of ZnO single microwire shows significant influence on emission efficiency. The EL spectra of n-ZnO single microwire/p-Si heterostructure exhibited relatively stronger UV emission which was compared with the EL spectra of n-ZnO single nanowire/p-Si heterostructure and n-ZnO film/p-Si heterostructure, respectively. - Highlights: • The ZnO microwires were synthesized with a vapor phase transport method. • ZnO single microwire/Si LEDs were fabricated using the ITO film as an electrode. • The EL spectra had been compared with n-ZnO film/p-Si heterostructure. • The EL spectra had been compared with n-ZnO single nanowire/p-Si heterostructure

  20. Photoelectrochemical Stability and Alteration Products of n-Type Single-Crystal ZnO Photoanodes

    Directory of Open Access Journals (Sweden)

    I. E. Paulauskas

    2011-01-01

    Full Text Available The photoelectrochemical stability and surface-alteration characteristics of doped and undoped n-type ZnO single-crystal photoanode electrodes were investigated. The single-crystal ZnO photoanode properties were analyzed using current-voltage measurements plus spectral and time-dependent quantum-yield methods. These measurements revealed a distinct anodic peak and an accompanying cathodic surface degradation process at negative potentials. The features of this peak depended on time and the NaOH concentration in the electrolyte, but were independent of the presence of electrode illumination. Current measurements performed at the peak indicate that charging and discharging effects are apparently taking place at the semiconductor/electrolyte interface. This result is consistent with the significant reactive degradation that takes place on the ZnO single crystal photoanode surface and that ultimately leads to the reduction of the ZnO surface to Zn metal. The resulting Zn-metal reaction products create unusual, dendrite-like, surface alteration structural features that were analyzed using x-ray diffraction, energy-dispersive analysis, and scanning electron microscopy. ZnO doping methods were found to be effective in increasing the n-type character of the crystals. Higher doping levels result in smaller depletion widths and lower quantum yields, since the minority carrier diffusion lengths are very short in these materials.

  1. Positron annihilation lifetime and photoluminescence studies on single crystalline ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Sarkar, A [Department of Physics, Bangabasi Morning College, 19 Rajkumar Chakraborty Sarani, Kolkata 700 009 (India); Chakrabarti, Mahuya [Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700009 (India); Ray, S K [Department of Physics and Meteorology, Indian Institute of Technology, Kharagpur (India); Bhowmick, D; Sanyal, D, E-mail: dirtha@vecc.gov.in [Variable Energy Cyclotron Centre, 1/AF, Bidhannagar, Kolkata 700064 (India)

    2011-04-20

    The room temperature positron annihilation lifetime for single crystalline ZnO has been measured as 164 {+-} 1 ps. The single component lifetime value is very close to but higher than the theoretically predicted value of {approx} 154 ps. Photoluminescence study (at 10 K) indicates the presence of hydrogen and other defects, mainly acceptor related, in the crystal. Defects related to a lower open volume than zinc vacancies, presumably a complex with two hydrogen atoms, are the major trapping sites in the sample. The bulk positron lifetime in ZnO is expected to be a little less than 164 ps.

  2. Positron annihilation lifetime and photoluminescence studies on single crystalline ZnO

    Science.gov (United States)

    Sarkar, A.; Chakrabarti, Mahuya; Ray, S. K.; Bhowmick, D.; Sanyal, D.

    2011-04-01

    The room temperature positron annihilation lifetime for single crystalline ZnO has been measured as 164 ± 1 ps. The single component lifetime value is very close to but higher than the theoretically predicted value of ~ 154 ps. Photoluminescence study (at 10 K) indicates the presence of hydrogen and other defects, mainly acceptor related, in the crystal. Defects related to a lower open volume than zinc vacancies, presumably a complex with two hydrogen atoms, are the major trapping sites in the sample. The bulk positron lifetime in ZnO is expected to be a little less than 164 ps.

  3. Positron annihilation lifetime and photoluminescence studies on single crystalline ZnO

    International Nuclear Information System (INIS)

    Sarkar, A; Chakrabarti, Mahuya; Ray, S K; Bhowmick, D; Sanyal, D

    2011-01-01

    The room temperature positron annihilation lifetime for single crystalline ZnO has been measured as 164 ± 1 ps. The single component lifetime value is very close to but higher than the theoretically predicted value of ∼ 154 ps. Photoluminescence study (at 10 K) indicates the presence of hydrogen and other defects, mainly acceptor related, in the crystal. Defects related to a lower open volume than zinc vacancies, presumably a complex with two hydrogen atoms, are the major trapping sites in the sample. The bulk positron lifetime in ZnO is expected to be a little less than 164 ps.

  4. Room temperature strong coupling effects from single ZnO nanowire microcavity

    KAUST Repository

    Das, Ayan; Heo, Junseok; Bayraktaroglu, Adrian; Guo, Wei; Ng, Tien Khee; Phillips, Jamie; Ooi, Boon S.; Bhattacharya, Pallab

    2012-01-01

    Strong coupling effects in a dielectric microcavity with a single ZnO nanowire embedded in it have been investigated at room temperature. A large Rabi splitting of ?100 meV is obtained from the polariton dispersion and a non

  5. Constructing MnO{sub 2}/single crystalline ZnO nanorod hybrids with enhanced photocatalytic and antibacterial activity

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Weiwei [College of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114 (China); Liu, Tiangui, E-mail: tianguiliu@gmail.com [College of Physics and Microelectronics Science, Hunan University, Changsha 410082 (China); Cao, Shiyi; Wang, Chen [College of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114 (China); Chen, Chuansheng, E-mail: 1666423158@qq.com [College of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410114 (China)

    2016-07-15

    In order to improve the photocatalytic and antibacterial activity of ZnO nanorods, ZnO nanorods decorated with MnO{sub 2} nanoparticles (MnO{sub 2}/ZnO nanorod hybrids) were prepared by using microwave assisted coprecipitation method under the influence of hydrogen peroxide, and the structure, photocatalytic activity and antibacterial property of the products were studied. Experimental results indicated that MnO{sub 2} nanoparticles are decorated on the surface of single crystalline ZnO nanorods. Moreover, the resultant MnO{sub 2}/ZnO nanorod hybrids have been proven to possess good photocatalytic and antibacterial activity, which their degradated efficiency for Rhodamin B (RhB) is twice as the pure ZnO nanorods. Enhancement for photocatalytic and antibacterial activity is mainly attributed to the low band gap energy and excellent electrochemical properties of MnO{sub 2} nanoparticles. - Graphical abstract: The MnO{sub 2}/single crystalline ZnO nanorods hybrids, which MnO{sub 2} nanoparticles are loaded on the surface of ZnO nanorods, were prepared by the step-by-step precipitation method under the assistance of ammonia and hydrogen peroxide. Display Omitted - Highlights: • MnO{sub 2}/ZnO nanorod hybrids were prepared by the step-by-step assembly method. • Single crystalline ZnO nanorods can be decorated by MnO{sub 2} nanoparticles. • MnO{sub 2}/ZnO nanorod hybrids possess good photocatalytic and antibacterial activity. • MnO{sub 2} can improve the photocatalytic activity of ZnO nanorods under visible light.

  6. Single fiber UV detector based on hydrothermally synthesized ZnO nanorods for wearable computing devices

    Science.gov (United States)

    Eom, Tae Hoon; Han, Jeong In

    2018-01-01

    There has been increasing interest in zinc oxide (ZnO) based ultraviolet (UV) sensing devices over the last several decades owing to their diverse range of applications. ZnO has extraordinary properties, such as a wide band gap and high exciton binding energy, which make it a beneficial material for UV sensing device. Herein, we show a ZnO UV sensing device fabricated on a cylindrical Polyethylene terephthalate (PET) monofilament. The ZnO active layer was synthesized by hydrothermal synthesis and the Cu electrodes were deposited by radio frequency (RF) magnetron sputtering. Cu thin film was deposited uniformly on a single PET fiber by rotating it inside the sputtering chamber. Various characteristics were investigated by changing the concentration of the seed solution and the growth solution. The growth of ZnO nanorods was confirmed by Field Emission Scanning Electron Microscopy (FESEM) to see the surface state and structure, followed by X-ray Diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) analysis. Also, current-voltage (I-V) curves were obtained to measure photocurrent and conductance. Furthermore, falling response time, rising response time, and responsivity were calculated by analyzing current-time (I-t) curves.

  7. Zn nanoparticle formation in FIB irradiated single crystal ZnO

    Science.gov (United States)

    Pea, M.; Barucca, G.; Notargiacomo, A.; Di Gaspare, L.; Mussi, V.

    2018-03-01

    We report on the formation of Zn nanoparticles induced by Ga+ focused ion beam on single crystal ZnO. The irradiated materials have been studied as a function of the ion dose by means of atomic force microscopy, scanning electron microscopy, Raman spectroscopy and transmission electron microscopy, evidencing the presence of Zn nanoparticles with size of the order of 5-30 nm. The nanoparticles are found to be embedded in a shallow amorphous ZnO matrix few tens of nanometers thick. Results reveal that ion beam induced Zn clustering occurs producing crystalline particles with the same hexagonal lattice and orientation of the substrate, and could explain the alteration of optical and electrical properties found for FIB fabricated and processed ZnO based devices.

  8. Photovoltaic device on a single ZnO nanowire p–n homojunction

    International Nuclear Information System (INIS)

    Cho, Hak Dong; Zakirov, Anvar S; Yuldashev, Shavkat U; Kang, Tae Won; Ahn, Chi Won; Yeo, Yung Kee

    2012-01-01

    A photovoltaic device was successfully grown solely based on the single ZnO p–n homojunction nanowire. The ZnO nanowire p–n diode consists of an as-grown n-type segment and an in situ arsenic-doped p-type segment. This p–n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased conditions. Our results demonstrate that the present ZnO p–n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nanoscale electronic, optoelectronic and medical devices. (paper)

  9. Homojunction p-n photodiodes based on As-doped single ZnO nanowire

    International Nuclear Information System (INIS)

    Cho, H. D.; Zakirov, A. S.; Yuldashev, Sh. U.; Kang, T. W.; Ahn, C. W.; Yeo, Y. K.

    2013-01-01

    Photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in-situ arsenic doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased condition. Our results demonstrate that present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nano-scale electronic, optoelectronic, and medical devices

  10. Origin of the defects-induced ferromagnetism in un-doped ZnO single crystals

    Science.gov (United States)

    Zhan, Peng; Xie, Zheng; Li, Zhengcao; Wang, Weipeng; Zhang, Zhengjun; Li, Zhuoxin; Cheng, Guodong; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

    2013-02-01

    We clarified, in this Letter, that in un-doped ZnO single crystals after thermal annealing in flowing argon, the defects-induced room-temperature ferromagnetism was originated from the surface defects and specifically, from singly occupied oxygen vacancies denoted as F+, by the optical and electrical properties measurements as well as positron annihilation analysis. In addition, a positive linear relationship was observed between the ferromagnetism and the F+ concentration, which is in support with the above clarification.

  11. Paramagnetism and antiferromagnetic interactions in single-phase Fe-implanted ZnO

    CERN Document Server

    Pereira, Lino Miguel da Costa; Correia, João Guilherme; Van Bael, M J; Temst, Kristiaan; Vantomme, André; Araújo, João Pedro

    2013-01-01

    As the intrinsic origin of the high temperature ferromagnetism often observed in wide-gap dilute magnetic semiconductors becomes increasingly debated, there is a growing need for comprehensive studies on the single-phase region of the phase diagram of these materials. Here we report on the magnetic and structural properties of Fe-doped ZnO prepared by ion implantation of ZnO single crystals. A detailed structural characterization shows that the Fe impurities substitute for Zn in ZnO in a wurtzite Zn$_{1−x}$Fe$_{x}$O phase which is coherent with the ZnO host. In addition, the density of beam-induced defects is progressively decreased by thermal annealing up to 900$^{\\circ}$C, from highly disordered after implantation to highly crystalline upon subsequent annealing. Based on a detailed analysis of the magnetometry data, we demonstrate that isolated Fe impurities occupying Zn substitutional sites behave as localized paramagnetic moments down to 2$^{\\circ}$K, irrespective of the Fe concentration and the density...

  12. High-resolution photoluminescence spectroscopy of Sn-doped ZnO single crystals

    International Nuclear Information System (INIS)

    Kumar, E. Senthil; Mohammadbeigi, F.; Boatner, L.A.; Watkins, S.P.

    2016-01-01

    Group IV donors in ZnO are poorly understood, despite evidence that they are effective n-type dopants. Here we present high-resolution photoluminescence (PL) spectroscopy studies of unintentionally doped and Sn-doped ZnO single crystals grown by the chemical vapor transport method. Doped samples showed greatly increased emission from the I 10 bound exciton transition that was recently proven to be related to the incorporation of Sn impurities based on radio-isotope studies. The PL linewidths are exceptionally sharp for these samples, enabling a clear identification of several donor species. Temperature-dependent PL measurements of the I 10 line emission energy and intensity dependence reveal a behavior that is similar to other shallow donors in ZnO. Ionized donor bound-exciton and two-electron satellite transitions of the I 10 transition are unambiguously identified and yield a donor binding energy of 71 meV. In contrast to recent reports of Ge-related donors in ZnO, the spectroscopic binding energy for the Sn-related donor bound exciton follows a linear relationship with donor binding energy (Haynes rule) similar to recently observed carbon related donors, and confirming the shallow nature of this defect center, which was recently attributed to a Sn Zn double donor compensated by an unknown single acceptor.

  13. Photoluminescence and positron annihilation spectroscopic investigation on a H+ irradiated ZnO single crystal

    Science.gov (United States)

    Sarkar, A.; Chakrabarti, Mahuya; Sanyal, D.; Bhowmick, D.; Dechoudhury, S.; Chakrabarti, A.; Rakshit, Tamita; Ray, S. K.

    2012-08-01

    Low temperature photoluminescence and room temperature positron annihilation spectroscopy have been employed to investigate the defects incorporated by 6 MeV H+ ions in a hydrothermally grown ZnO single crystal. Prior to irradiation, the emission from donor bound excitons is at 3.378 eV (10 K). The irradiation creates an intense and narrow emission at 3.368 eV (10 K). The intensity of this peak is nearly four times that of the dominant near band edge peak of the pristine crystal. The characteristic features of the 3.368 eV emission indicate its origin as a ‘hydrogen at oxygen vacancy’ type defect. The positron annihilation lifetime measurement reveals a single component lifetime spectrum for both the unirradiated (164 ± 1 ps) and irradiated crystal (175 ± 1 ps). It reflects the fact that the positron lifetime and intensity of the new irradiation driven defect species are a little higher compared to those in the unirradiated crystal. However, the estimated defect concentration, even considering the high dynamic defect annihilation rate in ZnO, comes out to be ˜4 × 1017 cm-3 (using SRIM software). This is a very high defect concentration compared to the defect sensitivity of positron annihilation spectroscopy. A probable reason is the partial filling of the incorporated vacancies (positron traps), which in ZnO are zinc vacancies. The positron lifetime of ˜175 ps (in irradiated ZnO) is consistent with recent theoretical calculations for partially hydrogen-filled zinc vacancies in ZnO. Passivation of oxygen vacancies by hydrogen is also reflected in the photoluminescence results. A possible reason for such vacancy filling (at both Zn and O sites) due to irradiation has also been discussed.

  14. Photoluminescence and positron annihilation spectroscopic investigation on a H+ irradiated ZnO single crystal

    International Nuclear Information System (INIS)

    Sarkar, A; Chakrabarti, Mahuya; Sanyal, D; Bhowmick, D; Dechoudhury, S; Chakrabarti, A; Rakshit, Tamita; Ray, S K

    2012-01-01

    Low temperature photoluminescence and room temperature positron annihilation spectroscopy have been employed to investigate the defects incorporated by 6 MeV H + ions in a hydrothermally grown ZnO single crystal. Prior to irradiation, the emission from donor bound excitons is at 3.378 eV (10 K). The irradiation creates an intense and narrow emission at 3.368 eV (10 K). The intensity of this peak is nearly four times that of the dominant near band edge peak of the pristine crystal. The characteristic features of the 3.368 eV emission indicate its origin as a ‘hydrogen at oxygen vacancy’ type defect. The positron annihilation lifetime measurement reveals a single component lifetime spectrum for both the unirradiated (164 ± 1 ps) and irradiated crystal (175 ± 1 ps). It reflects the fact that the positron lifetime and intensity of the new irradiation driven defect species are a little higher compared to those in the unirradiated crystal. However, the estimated defect concentration, even considering the high dynamic defect annihilation rate in ZnO, comes out to be ∼4 × 10 17 cm -3 (using SRIM software). This is a very high defect concentration compared to the defect sensitivity of positron annihilation spectroscopy. A probable reason is the partial filling of the incorporated vacancies (positron traps), which in ZnO are zinc vacancies. The positron lifetime of ∼175 ps (in irradiated ZnO) is consistent with recent theoretical calculations for partially hydrogen-filled zinc vacancies in ZnO. Passivation of oxygen vacancies by hydrogen is also reflected in the photoluminescence results. A possible reason for such vacancy filling (at both Zn and O sites) due to irradiation has also been discussed. (paper)

  15. Photoluminescence and positron annihilation spectroscopic investigation on a H(+) irradiated ZnO single crystal.

    Science.gov (United States)

    Sarkar, A; Chakrabarti, Mahuya; Sanyal, D; Bhowmick, D; Dechoudhury, S; Chakrabarti, A; Rakshit, Tamita; Ray, S K

    2012-08-15

    Low temperature photoluminescence and room temperature positron annihilation spectroscopy have been employed to investigate the defects incorporated by 6 MeV H(+) ions in a hydrothermally grown ZnO single crystal. Prior to irradiation, the emission from donor bound excitons is at 3.378 eV (10 K). The irradiation creates an intense and narrow emission at 3.368 eV (10 K). The intensity of this peak is nearly four times that of the dominant near band edge peak of the pristine crystal. The characteristic features of the 3.368 eV emission indicate its origin as a 'hydrogen at oxygen vacancy' type defect. The positron annihilation lifetime measurement reveals a single component lifetime spectrum for both the unirradiated (164 ± 1 ps) and irradiated crystal (175 ± 1 ps). It reflects the fact that the positron lifetime and intensity of the new irradiation driven defect species are a little higher compared to those in the unirradiated crystal. However, the estimated defect concentration, even considering the high dynamic defect annihilation rate in ZnO, comes out to be ∼4 × 10(17) cm(-3) (using SRIM software). This is a very high defect concentration compared to the defect sensitivity of positron annihilation spectroscopy. A probable reason is the partial filling of the incorporated vacancies (positron traps), which in ZnO are zinc vacancies. The positron lifetime of ∼175 ps (in irradiated ZnO) is consistent with recent theoretical calculations for partially hydrogen-filled zinc vacancies in ZnO. Passivation of oxygen vacancies by hydrogen is also reflected in the photoluminescence results. A possible reason for such vacancy filling (at both Zn and O sites) due to irradiation has also been discussed.

  16. Neutron monochromators of BeO, MgO and ZnO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Adib, M.; Habib, N. [Reactor Physics Department, NRC, AEAE, Cairo (Egypt); Bashter, I.I. [Physics Department, Faculty of Science, Zagazig University (Egypt); Morcos, H.N.; El-Mesiry, M.S. [Reactor Physics Department, NRC, AEAE, Cairo (Egypt); Mansy, M.S., E-mail: mohamedmansy_np@yahoo.com [Physics Department, Faculty of Science, Zagazig University (Egypt)

    2014-05-21

    The monochromatic features of BeO, MgO and ZnO single crystals are discussed in terms of orientation, mosaic spread, and thickness within the wavelength band from 0.05 up to 0.5 nm. A computer program MONO, written in “FORTRAN”, has been developed to carry out the required calculations. Calculation shows that a 5 mm thick MgO single crystal cut along its (2 0 0) plane having mosaic spread of 0.5° FWHM has the optimum parameters when it is used as a neutron monochromator. Moreover, at wavelengths shorter than 0.24 nm the reflected monochromatic neutrons are almost free from the higher order ones. The same features are seen with BeO (0 0 2) with less reflectivity than that of the former. Also, ZnO cut along its (0 0 2) plane is preferred over the others only at wavelengths longer than 0.20 nm. When the selected monochromatic wavelength is longer than 0.24 nm, the neutron intensities of higher orders from a thermal reactor flux are higher than those of the first-order one. For a cold reactor flux, the first order of BeO and MgO single crystals is free from the higher orders up to 0.4 nm, and ZnO at wavelengths up to 0.5 nm. - Highlights: • Monochromatic features of BeO, MgO and ZnO single crystals. • Calculations of neutron reflectivity using a computer program MONO. • Optimum mosaic spread, thickness and cutting plane of single crystals.

  17. Hydrogen-related complexes in Li-diffused ZnO single crystals

    Science.gov (United States)

    Corolewski, Caleb D.; Parmar, Narendra S.; Lynn, Kelvin G.; McCluskey, Matthew D.

    2016-07-01

    Zinc oxide (ZnO) is a wide band gap semiconductor and a potential candidate for next generation white solid state lighting applications. In this work, hydrogen-related complexes in lithium diffused ZnO single crystals were studied. In addition to the well-known Li-OH complex, several other hydrogen defects were observed. When a mixture of Li2O and ZnO is used as the dopant source, zinc vacancies are suppressed and the bulk Li concentration is very high (>1019 cm-3). In that case, the predominant hydrogen complex has a vibrational frequency of 3677 cm-1, attributed to surface O-H species. When Li2CO3 is used, a structured blue luminescence band and O-H mode at 3327 cm-1 are observed at 10 K. These observations, along with positron annihilation measurements, suggest a zinc vacancy-hydrogen complex, with an acceptor level ˜0.3 eV above the valence-band maximum. This relatively shallow acceptor could be beneficial for p-type ZnO.

  18. Origins of low resistivity in Al ion-implanted ZnO bulk single crystals

    Science.gov (United States)

    Oga, T.; Izawa, Y.; Kuriyama, K.; Kushida, K.; Kinomura, A.

    2011-06-01

    The origins of low resistivity in Al ion-implanted ZnO bulk single crystals are studied by combining Rutherford backscattering spectroscopy (RBS), nuclear reaction analysis (NRA), photoluminescence (PL), and Van der Pauw methods. The Al-ion implantation (peak concentration: 2.6 × 1020cm-3) into ZnO is performed using a multiple-step energy. The resistivity decreases from ˜104 Ω cm for un-implanted ZnO to 1.4 × 10-1 Ω cm for as-implanted, and reaches 6.0 × 10-4 Ω cm for samples annealed at 1000 °C. RBS and NRA measurements for as-implanted ZnO suggest the existence of the lattice displacement of Zn (Zni) and O (Oi), respectively. After annealing at 1000 °C, the Zni related defects remain and the Oi related defects disappear. The origin of the low resistivity in the as-implanted sample is attributed to the Zni (˜30 meV [Look et al., Phys. Rev. Lett. 82, 2552 (1999)]). In contrast, the origin of the low resistivity in the sample annealed at 1000 °C is assigned to both of the Zni related defects and the electrically activated Al donor. A new PL emission appears at around 3.32 eV after annealing at 1000 °C, suggesting electrically activated Al donors.

  19. Hydrogen-related complexes in Li-diffused ZnO single crystals

    International Nuclear Information System (INIS)

    Corolewski, Caleb D.; Parmar, Narendra S.; Lynn, Kelvin G.; McCluskey, Matthew D.

    2016-01-01

    Zinc oxide (ZnO) is a wide band gap semiconductor and a potential candidate for next generation white solid state lighting applications. In this work, hydrogen-related complexes in lithium diffused ZnO single crystals were studied. In addition to the well-known Li-OH complex, several other hydrogen defects were observed. When a mixture of Li_2O and ZnO is used as the dopant source, zinc vacancies are suppressed and the bulk Li concentration is very high (>10"1"9" cm"−"3). In that case, the predominant hydrogen complex has a vibrational frequency of 3677 cm"−"1, attributed to surface O-H species. When Li_2CO_3 is used, a structured blue luminescence band and O-H mode at 3327 cm"−"1 are observed at 10 K. These observations, along with positron annihilation measurements, suggest a zinc vacancy–hydrogen complex, with an acceptor level ∼0.3 eV above the valence-band maximum. This relatively shallow acceptor could be beneficial for p-type ZnO.

  20. Hydrogen-related complexes in Li-diffused ZnO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Corolewski, Caleb D. [Materials Science and Engineering Program, Washington State University, Pullman, Washington 99164-2814 (United States); Parmar, Narendra S.; Lynn, Kelvin G. [Center for Materials Research, Washington State University, Pullman, Washington 99164-2814 (United States); McCluskey, Matthew D., E-mail: mattmcc@wsu.edu [Materials Science and Engineering Program, Washington State University, Pullman, Washington 99164-2814 (United States); Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814 (United States)

    2016-07-21

    Zinc oxide (ZnO) is a wide band gap semiconductor and a potential candidate for next generation white solid state lighting applications. In this work, hydrogen-related complexes in lithium diffused ZnO single crystals were studied. In addition to the well-known Li-OH complex, several other hydrogen defects were observed. When a mixture of Li{sub 2}O and ZnO is used as the dopant source, zinc vacancies are suppressed and the bulk Li concentration is very high (>10{sup 19 }cm{sup −3}). In that case, the predominant hydrogen complex has a vibrational frequency of 3677 cm{sup −1}, attributed to surface O-H species. When Li{sub 2}CO{sub 3} is used, a structured blue luminescence band and O-H mode at 3327 cm{sup −1} are observed at 10 K. These observations, along with positron annihilation measurements, suggest a zinc vacancy–hydrogen complex, with an acceptor level ∼0.3 eV above the valence-band maximum. This relatively shallow acceptor could be beneficial for p-type ZnO.

  1. Nanosecond X-ray detector based on high resistivity ZnO single crystal semiconductor

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Xiaolong; He, Yongning, E-mail: yongning@mail.xjtu.edu.cn; Peng, Wenbo; Huang, Zhiyong; Qi, Xiaomeng; Pan, Zijian; Zhang, Wenting [School of Electronic and Information Engineering, Xi' an Jiaotong University, Xi' an 710049 (China); Chen, Liang; Liu, Jinliang; Zhang, Zhongbing; Ouyang, Xiaoping [Radiation Detection Research Center, Northwest Institute of Nuclear Technology, Xi' an 710024 (China)

    2016-04-25

    The pulse radiation detectors are sorely needed in the fields of nuclear reaction monitoring, material analysis, astronomy study, spacecraft navigation, and space communication. In this work, we demonstrate a nanosecond X-ray detector based on ZnO single crystal semiconductor, which emerges as a promising compound-semiconductor radiation detection material for its high radiation tolerance and advanced large-size bulk crystal growth technique. The resistivity of the ZnO single crystal is as high as 10{sup 13} Ω cm due to the compensation of the donor defects (V{sub O}) and acceptor defects (V{sub Zn} and O{sub i}) after high temperature annealing in oxygen. The photoconductive X-ray detector was fabricated using the high resistivity ZnO single crystal. The rise time and fall time of the detector to a 10 ps pulse electron beam are 0.8 ns and 3.3 ns, respectively, indicating great potential for ultrafast X-ray detection applications.

  2. Neutron monochromators of BeO, MgO and ZnO single crystals

    Science.gov (United States)

    Adib, M.; Habib, N.; Bashter, I. I.; Morcos, H. N.; El-Mesiry, M. S.; Mansy, M. S.

    2014-05-01

    The monochromatic features of BeO, MgO and ZnO single crystals are discussed in terms of orientation, mosaic spread, and thickness within the wavelength band from 0.05 up to 0.5 nm. A computer program MONO, written in “FORTRAN”, has been developed to carry out the required calculations. Calculation shows that a 5 mm thick MgO single crystal cut along its (2 0 0) plane having mosaic spread of 0.5° FWHM has the optimum parameters when it is used as a neutron monochromator. Moreover, at wavelengths shorter than 0.24 nm the reflected monochromatic neutrons are almost free from the higher order ones. The same features are seen with BeO (0 0 2) with less reflectivity than that of the former. Also, ZnO cut along its (0 0 2) plane is preferred over the others only at wavelengths longer than 0.20 nm. When the selected monochromatic wavelength is longer than 0.24 nm, the neutron intensities of higher orders from a thermal reactor flux are higher than those of the first-order one. For a cold reactor flux, the first order of BeO and MgO single crystals is free from the higher orders up to 0.4 nm, and ZnO at wavelengths up to 0.5 nm.

  3. Characterisation of irradiation-induced defects in ZnO single crystals

    International Nuclear Information System (INIS)

    Prochazka, I; Cizek, J; Lukac, F; Melikhova, O; Valenta, J; Havranek, V; Anwand, W; Skuratov, V A; Strukova, T S

    2016-01-01

    Positron annihilation spectroscopy (PAS) combined with optical methods was employed for characterisation of defects in the hydrothermally grown ZnO single crystals irradiated by 167 MeV Xe 26+ ions to fluences ranged from 3×10 12 to 1×10 14 cm -2 . The positron lifetime (LT), Doppler broadening as well as slow-positron implantation spectroscopy (SPIS) techniques were involved. The ab-initio theoretical calculations were utilised for interpretation of LT results. The optical transmission and photoluminescence measurements were conducted, too. The virgin ZnO crystal exhibited a single component LT spectrum with a lifetime of 182 ps which is attributed to saturated positron trapping in Zn vacancies associated with hydrogen atoms unintentionally introduced into the crystal during the crystal growth. The Xe ion irradiated ZnO crystals have shown an additional component with a longer lifetime of ≈ 360 ps which comes from irradiation-induced larger defects equivalent in size to clusters of ≈10 to 12 vacancies. The concentrations of these clusters were estimated on the basis of combined LT and SPIS data. The PAS data were correlated with irradiation induced changes seen in the optical spectroscopy experiments. (paper)

  4. Characterisation of irradiation-induced defects in ZnO single crystals

    Science.gov (United States)

    Prochazka, I.; Cizek, J.; Lukac, F.; Melikhova, O.; Valenta, J.; Havranek, V.; Anwand, W.; Skuratov, V. A.; Strukova, T. S.

    2016-01-01

    Positron annihilation spectroscopy (PAS) combined with optical methods was employed for characterisation of defects in the hydrothermally grown ZnO single crystals irradiated by 167 MeV Xe26+ ions to fluences ranged from 3×1012 to 1×1014 cm-2. The positron lifetime (LT), Doppler broadening as well as slow-positron implantation spectroscopy (SPIS) techniques were involved. The ab-initio theoretical calculations were utilised for interpretation of LT results. The optical transmission and photoluminescence measurements were conducted, too. The virgin ZnO crystal exhibited a single component LT spectrum with a lifetime of 182 ps which is attributed to saturated positron trapping in Zn vacancies associated with hydrogen atoms unintentionally introduced into the crystal during the crystal growth. The Xe ion irradiated ZnO crystals have shown an additional component with a longer lifetime of ≈ 360 ps which comes from irradiation-induced larger defects equivalent in size to clusters of ≈10 to 12 vacancies. The concentrations of these clusters were estimated on the basis of combined LT and SPIS data. The PAS data were correlated with irradiation induced changes seen in the optical spectroscopy experiments.

  5. Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate

    KAUST Repository

    Qin, Yong

    2008-12-04

    A general method is presented for growing laterally aligned and patterned ZnO nanowire (NW) arrays on any substrate as long as it is flat. The orientation control is achieved using the combined effect from ZnO seed layer and the catalytically inactive Cr (or Sn) layer for NW growth. The growth temperature (< 100 °C) is so low that the method can be applied to a wide range of substrates that can be inorganic, organic, single crystal, polycrystal, or amorphous. The laterally aligned ZnO NW arrays can be employed for various applications, such as gas sensor, field effect transistor, nanogenerator, and flexible electronics. © 2008 American Chemical Society.

  6. Single crystalline ZnO nanorods grown by a simple hydrothermal process

    Energy Technology Data Exchange (ETDEWEB)

    Pei, L.Z., E-mail: lzpei1977@163.com [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Zhao, H.S. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Tan, W. [Henkel Huawei Electronics Co. Ltd., Lian' yungang, Jiangsu 222006 (China); Yu, H.Y. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Chen, Y.W. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Zhang Qianfeng [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China)

    2009-09-15

    Single crystalline ZnO nanorods with wurtzite structure have been prepared by a simple hydrothermal process. The microstructure and composition of the products were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution TEM, energy dispersive X-ray spectrum (EDS) and Raman spectrum. The nanorods have diameters ranging from 100 nm to 800 nm and length of longer than 10 {mu}m. Raman peak at 437.8 cm{sup -1} displays the characteristic peak of wurtzite ZnO. Photoluminescence (PL) spectrum shows a blue light emission at 441 nm, which is related to radiative recombination of photo-generated holes with singularly ionized oxygen vacancies.

  7. Single crystalline ZnO nanorods grown by a simple hydrothermal process

    International Nuclear Information System (INIS)

    Pei, L.Z.; Zhao, H.S.; Tan, W.; Yu, H.Y.; Chen, Y.W.; Zhang Qianfeng

    2009-01-01

    Single crystalline ZnO nanorods with wurtzite structure have been prepared by a simple hydrothermal process. The microstructure and composition of the products were studied by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution TEM, energy dispersive X-ray spectrum (EDS) and Raman spectrum. The nanorods have diameters ranging from 100 nm to 800 nm and length of longer than 10 μm. Raman peak at 437.8 cm -1 displays the characteristic peak of wurtzite ZnO. Photoluminescence (PL) spectrum shows a blue light emission at 441 nm, which is related to radiative recombination of photo-generated holes with singularly ionized oxygen vacancies.

  8. Properties and local environment of p-type and photoluminescent rare earths implanted into ZnO single crystals

    CERN Document Server

    Rita, EMC; Wahl, U; Soares, JC

    This thesis presents an experimental study of the local environment of p-type and Rare- Earth dopants implanted in ZnO single-crystals (SCs). Various nuclear and bulk property techniques were combined in the following evaluations: Implantation damage annealing was evaluated in ZnO SCs implanted with Fe, Sr and Ca. P-type dopants Cu and Ag implanted ZnO SCs were studied revealing that the solubility of Cu in substituting Zn is considerably higher than that of Ag. These results are discussed within the scope of the ZnO p-type doping problematic with these elements. Experimental proofs of the As “anti-site” behavior in ZnO were for the first time attained, i.e., the majority of As atoms are substitutional at the Zn site (SZn), possibly surrounded by two Zn vacancies (VZn). This reinforces the theoretical prediction that As acts as an acceptor in ZnO via the AsZn-2VZn complex formation. The co-doping of ZnO SC with In (donor) and As (acceptor) was addressed. The most striking result is the possible In-As “p...

  9. Defect studies of ZnO single crystals electrochemically doped with hydrogen

    Science.gov (United States)

    Čížek, J.; Žaludová, N.; Vlach, M.; Daniš, S.; Kuriplach, J.; Procházka, I.; Brauer, G.; Anwand, W.; Grambole, D.; Skorupa, W.; Gemma, R.; Kirchheim, R.; Pundt, A.

    2008-03-01

    Various defect studies of hydrothermally grown (0001) oriented ZnO crystals electrochemically doped with hydrogen are presented. The hydrogen content in the crystals is determined by nuclear reaction analysis and it is found that already 0.3at.% H exists in chemically bound form in the virgin ZnO crystals. A single positron lifetime of 182ps is detected in the virgin crystals and attributed to saturated positron trapping at Zn vacancies surrounded by hydrogen atoms. It is demonstrated that a very high amount of hydrogen (up to ˜30at.%) can be introduced into the crystals by electrochemical doping. More than half of this amount is chemically bound, i.e., incorporated into the ZnO crystal lattice. This drastic increase of the hydrogen concentration is of marginal impact on the measured positron lifetime, whereas a contribution of positrons annihilated by electrons belonging to O-H bonds formed in the hydrogen doped crystal is found in coincidence Doppler broadening spectra. The formation of hexagonal shape pyramids on the surface of the hydrogen doped crystals by optical microscopy is observed and discussed.

  10. Spatial mapping of exciton lifetimes in single ZnO nanowires

    Directory of Open Access Journals (Sweden)

    J. S. Reparaz

    2013-07-01

    Full Text Available We investigate the spatial dependence of the exciton lifetimes in single ZnO nanowires. We have found that the free exciton and bound exciton lifetimes exhibit a maximum at the center of nanowires, while they decrease by 30% towards the tips. This dependence is explained by considering the cavity-like properties of the nanowires in combination with the Purcell effect. We show that the lifetime of the bound-excitons scales with the localization energy to the power of 3/2, which validates the model of Rashba and Gurgenishvili at the nanoscale.

  11. Trapping effects and acoustoelectric current saturation in ZnO single crystals

    DEFF Research Database (Denmark)

    Mosekilde, Erik

    1970-01-01

    Measurements of current-voltage characteristics for ZnO single crystals at temperatures between 77 and 640 °K are reported. Because of the buildup of an intense acoustic flux, a strong current saturation sets in when the trap-controlled electron drift velocity is equal to the velocity of sound....... The temperature dependence of the saturated current is discussed in terms of a trapping model which includes nonlinear trapping effects. Our results indicate the presence of a shallow-donor level with an ionization energy of 50 meV and a deep-donor level approximately 230 meV below the conduction-band edge...

  12. Morphology development and oriented growth of single crystalline ZnO nanorod

    International Nuclear Information System (INIS)

    Wu Lili; Wu Youshi; Lue Wei; Wei Huiying; Shi Yuanchang

    2005-01-01

    Single crystalline ZnO nanorods were achieved by the assembly of nanocrystallines in tens of nanometer under hydrothermal conditions with the assistance of surfactant cetyltrimethylammonium bromide (CTAB). The obtained nanorod has rough surface as a result of oriented attachment growth. Transmission electron microscope (TEM) images showed the morphology evolution of the nanorod at different reaction time. Defects were observed and porous structure was left after the assembly of hundreds of nanocrystalline building blocks. Effect of pH condition on the morphology of the nanorod was also investigated

  13. Experimental and theoretical study of CO adsorption on the surface of single phase hexagonally plate ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Akbari, Amin; Firooz, Azam Anaraki [Chemistry Department, Faculty of Sciences, Shahid Rajaee Teacher Training University, PO Box 16785-163, Tehran (Iran, Islamic Republic of); Beheshtian, Javad, E-mail: j.beheshtian@srttu.edu [Chemistry Department, Faculty of Sciences, Shahid Rajaee Teacher Training University, PO Box 16785-163, Tehran (Iran, Islamic Republic of); Khodadadi, Abbas Ali [Oil and Gas Processing Center of Excellence, School of Chemical Engineering, University of Tehran, 11155-4563 Tehran (Iran, Islamic Republic of)

    2014-10-01

    Highlights: • Hexagonally plate ZnO microstructure was synthesized by a simple hydrothermal method. • HRTEM images indicated a single crystal with a [0 0 1] direction growth. • DFT calculations were performed to reveal structure and electronic properties of ZnO. • The CO sensor response was close to obtained theoretical results. - Abstract: A simple low temperature hydrothermal method has been investigated for synthesis of single phase hexagonally plate ZnO microstructure. The synthesized ZnO was characterized using scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) photoluminescence spectrum (PL) and ultraviolet and visible absorption spectroscopy (UV–vis) to investigate the surface morphology, crystallographic phase, optical properties and used as a sensor for detection of CO gas molecules. It was observed that the ZnO microstructures were uniform size, single phase and symmetrical, with a hexagonal shape and height of ∼250 nm. The optical band gap value of this sample was calculated to be about 3.22 eV, which show a red shift with theoretical method. High-resolution TEM images indicate that all the microstructures are single crystals with a [0 0 1] direction growth. We studied the gas response of this sample to 500 ppm CO over a temperature range of 200–400 °C and compared with theoretical results. Density functional theory (DFT) calculations were employed to investigate the structure and electronic properties of ZnO with simulating the adsorption process of CO gas on the ZnO (1 0 1) surface. The theoretical results were in good agreement with experimental results.

  14. Chemical bath deposition of ZnO nanowire-nanoparticle composite electrodes for use in dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Ku, C-H; Wu, J-J [Department of Chemical Engineering, National Cheng Kung University, Tainan 701, Taiwan (China)

    2007-12-19

    ZnO nanowire (NW)-layered basic zinc acetate (LBZA)/ZnO nanoparticle (NP) composite electrodes with different NP occupying extents have been synthesized using a simple wet-chemical route for use in dye-sensitized solar cells (DSSCs). By employing mercurochrome as the sensitizer, superior efficiencies ({eta}) of 1.27-2.37% are obtained using the ZnO NW-LBZA/ZnO NP composite electrodes composed of a 5.5 {mu}m thick NW array with different NP occupying extents in comparison with the ZnO NW DSSC ({eta} = 0.45%). It suggests that the ZnO NW-LBZA/ZnO NP composite films which possess a considerable enlarged surface area by NPs growth, without sacrificing electron transport efficiency of single-crystalline ZnO NWs at the same time, are promising photoanodes for use in DSSCs. In addition to the extent of NP occupation, the overall efficiency of the ZnO NW-LBZA/ZnO NP composite DSSC is also influenced by the thickness of the composite film as well as the LBZA fraction and the cracks within the composite. The fraction of LBZA affected by the NP growth period and post-annealing conditions is found to play a crucial role in electron transport through the composite anode. Up to now, a high efficiency DSSC of 3.2% is achieved using a mercurochrome-sensitized and 6.2 {mu}m thick NW-NP composite film.

  15. Giant coercivity in ferromagnetic Co doped ZnO single crystal thin film

    International Nuclear Information System (INIS)

    Loukya, B.; Negi, D.S.; Dileep, K.; Kumar, N.; Ghatak, Jay; Datta, R.

    2013-01-01

    The origin of ferromagnetism in ZnO doped with transition metal impurities has been discussed extensively and appeared to be a highly controversial and challenging topic in today's solid state physics. Magnetism observed in this system is generally weak and soft. We have grown Co:ZnO up to 30 at% Co in single crystal thin film form on c-plane sapphire. A composition dependent coercivity is observed in this system which reaches peak value at 25 at% Co, the values are 860 Oe and 1149 Oe with applied field along parallel and perpendicular to the film substrate interface respectively. This giant coercivity might pave the way to exploit this material as a magnetic semiconductor with novel logic functionalities. The findings are explained based on defect band itinerant ferromagnetism and its partial interaction with localized d electrons of Co through charge transfer. Besides large coercivity, an increase in the band gap with Co concentration has also been observed along with blue emission peak with long tail confirming the formation of extended point defect levels in the host lattice band gap. - Highlights: • Co doped ZnO ferromagnetic single crystal thin film. • Giant coercivity in Co:ZnO thin film which may help to turn this material into application. • Cathodoluminescence (CL) data showing increase in band gap with Co concentrations. • A theoretical proposal is made to explain the observed giant coercivity

  16. Effect of high temperature annealing on defects and optical properties of ZnO single crystals

    International Nuclear Information System (INIS)

    Jiang, M.; Wang, D.D.; Zou, B.; Chen, Z.Q.; Kawasuso, A.; Sekiguchi, T.

    2012-01-01

    Hydrothermal grown ZnO single crystals were annealed in N 2 or O 2 between 900 and 1300 C. Positron lifetime measurements reveal a single lifetime in all the ZnO samples before and after annealing. The positron lifetime is about 181 ps after annealing at 900 C in either N 2 or O 2 atmosphere. However, increase of the positron lifetime is observed after further annealing the sample at higher temperatures up to 1300 C, and it has a faster increase in O 2 ambient. Temperature dependence measurements show that the positron lifetime has very slight increase with temperature for the 900 C annealed sample, while it shows notable variation for the sample annealed at 1300 C. This implied that annealing at high temperature introduces additional defects. These defects are supposed to be Zn vacancy-related defects. Cathodoluminescence (CL) measurements indicates enhancement of both UV and green emission after annealing, and the enhancement of green emission is much stronger for the samples annealed in O 2 ambient. The possible origin of green emission is tentatively discussed. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  17. Intrinsic magnetism of a series of Co substituted ZnO single crystals

    International Nuclear Information System (INIS)

    Lv Peiwen; Huang Feng; Chu Wangsheng; Lin Zhang; Chen Dagui; Li Wei; Chen Dongliang; Wu Ziyu

    2008-01-01

    Magnetic properties of a series of well-substituted Zn 1-x Co x O (x = 0.018,0.036 and 0.05) single crystals were studied. A typical paramagnetic anisotropy property, which strengthens when x decreases, was found. A magnetization step was observed at 2 K when the magnetic field is parallel to the c axis, indicating that paramagnetic anisotropy is the origin of the strong crystal field effect on Co 2+ ions in ZnO lattices. The Co 2+ single-ion anisotropy parameter 2D is obtained as 7.5 K. The effective moment of Co 2+ takes the values 2.7 μ B , 1.82 μ B , 1.49 μ B when x = 0.018, 0.036 and 0.05, revealing that more antiferromagnetic coupling between Co 2+ ions arises in the perfect crystal when x increases

  18. Non-classical logic inverter coupling a ZnO nanowire-based Schottky barrier transistor and adjacent Schottky diode.

    Science.gov (United States)

    Hosseini Shokouh, Seyed Hossein; Raza, Syed Raza Ali; Lee, Hee Sung; Im, Seongil

    2014-08-21

    On a single ZnO nanowire (NW), we fabricated an inverter-type device comprising a Schottky diode (SD) and field-effect transistor (FET), aiming at 1-dimensional (1D) electronic circuits with low power consumption. The SD and adjacent FET worked respectively as the load and driver, so that voltage signals could be easily extracted as the output. In addition, NW FET with a transparent conducting oxide as top gate turned out to be very photosensitive, although ZnO NW SD was blind to visible light. Based on this, we could achieve an array of photo-inverter cells on one NW. Our non-classical inverter is regarded as quite practical for both logic and photo-sensing due to its performance as well as simple device configuration.

  19. Structural and magnetic properties of Tb implanted ZnO single crystals

    International Nuclear Information System (INIS)

    Zhou Shengqiang; Potzger, K.; Muecklich, A.; Eichhorn, F.; Helm, M.; Skorupa, W.; Fassbender, J.

    2008-01-01

    ZnO single crystals have been implanted with Tb ions. For an atomic concentration of 1.5%, annealing at 823 K leads to an increase of the saturation magnetization per implanted Tb ion up to 1.8 μ B at room temperature. Structural investigations revealed no secondary phase formation, but the out-diffusion of Tb. No significant evidence is found for Tb substituting Zn sites either in the as-implanted or annealed samples. However, indications for the existence of a small amount of Tb nanoclusters however have been found using magnetization versus temperature measurements. The ferromagnetic properties disappear completely upon annealing at 1023 K. This behavior is related to the formation of oxide complexes or nanoparticles

  20. Room temperature strong coupling effects from single ZnO nanowire microcavity

    KAUST Repository

    Das, Ayan

    2012-05-01

    Strong coupling effects in a dielectric microcavity with a single ZnO nanowire embedded in it have been investigated at room temperature. A large Rabi splitting of ?100 meV is obtained from the polariton dispersion and a non-linearity in the polariton emission characteristics is observed at room temperature with a low threshold of 1.63 ?J/cm2, which corresponds to a polariton density an order of magnitude smaller than that for the Mott transition. The momentum distribution of the lower polaritons shows evidence of dynamic condensation and the absence of a relaxation bottleneck. The polariton relaxation dynamics were investigated by timeresolved measurements, which showed a progressive decrease in the polariton relaxation time with increase in polariton density. © 2012 Optical Society of America.

  1. Structural characterization of H plasma-doped ZnO single crystals by positron annihilation spectroscopies

    Energy Technology Data Exchange (ETDEWEB)

    Anwand, Wolfgang; Brauer, Gerhard; Cowan, Thomas E. [Institut fuer Strahlenphysik, Forschungszentrum Dresden-Rossendorf, P.O. Box 510 119, 01314 Dresden (Germany); Grambole, Dieter; Skorupa, Wolfgang [Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Dresden-Rossendorf, P.O. Box 510 119, 01314 Dresden (Germany); Cizek, Jakub; Kuriplach, Jan; Prochazka, Ivan [Department of Low Temperature Physics, Charles University, V Holesovickach 2, 18000 Prague (Czech Republic); Egger, Werner; Sperr, Peter [Institut fuer Angewandte Physik und Messtechnik, Fakultaet fuer Luft- und Raumfahrttechnik, Universitaet der Bundeswehr, Heisenbergweg 39, 85579 Neubiberg (Germany)

    2010-11-15

    Nominally undoped, hydrothermally grown ZnO single crystals have been investigated before and after exposure to remote H plasma. Structural characterizations have been made by various positron annihilation spectroscopies (continuous and pulsed slow positron beams, conventional lifetime). The content of bound hydrogen (H-b) before and after the remote H plasma treatment at the polished side of the crystals was determined at depths of 100 and 600 nm, respectively, using nuclear reaction analysis. At a depth of 100 nm, H-b increased from (11.8{+-}2.5) to (48.7{+-}7.6) x 10{sup 19} cm{sup -3} after remote H plasma treatment, whereas at 600 nm no change in H-b was observed. (Copyright copyright 2010 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Preparation of a Non-Polar ZnO Film on a Single-Crystal NdGaO3 Substrate by the RF Sputtering Method

    Science.gov (United States)

    Kashiwaba, Y.; Tanaka, Y.; Sakuma, M.; Abe, T.; Imai, Y.; Kawasaki, K.; Nakagawa, A.; Niikura, I.; Kashiwaba, Y.; Osada, H.

    2018-04-01

    Preparation of non-polar ZnO ( 11\\overline{2} 0 ) films on single-crystal NdGaO3 (NGO) (001) substrates was successfully achieved by the radio frequency (RF) sputtering method. Orientation, deposition rate, and surface roughness of ZnO films strongly depend on the working pressure. Characteristics of ZnO films deposited on single-crystal NGO (001) substrates were compared with those of ZnO films deposited on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. An x-ray diffraction peak of the ZnO ( 11\\overline{2} 0 ) plane was observed on ZnO films deposited on single-crystal NGO (001) substrates under working pressure of less than 0.5 Pa. On the other hand, uniaxially oriented ZnO ( 11\\overline{2} 0 ) films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates were observed under working pressure of 0.1 Pa. The mechanism by which the diffraction angle of the ZnO ( 11\\overline{2} 0 ) plane on single-crystal NGO (001) substrates was shifted is discussed on the basis of anisotropic stress of lattice mismatch. The deposition rate of ZnO films decreased with an increase in working pressure, and the deposition rate on single-crystal NGO (001) substrates was larger than that on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. Root mean square (RMS) roughness of ZnO films increased with an increase in working pressure, and RMS roughness of ZnO films on single-crystal NGO (001) substrates was smaller than that of ZnO films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates even though the film thickness on single-crystal NGO (001) substrates was greater than that on sapphire substrates. It is thought that a single-crystal NGO (001) substrate is useful for deposition of non-polar ZnO ( 11\\overline{2} 0 ) films.

  3. Synthesis and characterization of single-phase Mn-doped ZnO

    Science.gov (United States)

    Chattopadhyay, S.; Dutta, S.; Banerjee, A.; Jana, D.; Bandyopadhyay, S.; Chattopadhyay, S.; Sarkar, A.

    2009-05-01

    Different samples of Zn 1-xMn xO series have been prepared using conventional solid-state sintering method. We identified up to what extent doping will enable us to synthesize single-phase polycrystalline Mn-doped ZnO sample, which is one of the prerequisites for dilute magnetic semiconductor, and we have analyzed its some other physical aspects. In synthesizing the samples, proportion of Mn varies from 1 to 5 at%. However, the milling time varied (6, 12, 24, 48 and 96 h) only for 2 at% Mn-doped samples while for other samples (1, 3, 4 and 5 at% Mn doped) the milling time has been fixed to 96 h. Room-temperature X-ray diffraction (XRD) data reveal that all of the prepared samples up to 3 at% of Mn doping exhibit wurtzite-type structure, and no segregation of Mn and/or its oxides has been found. The 4 at% Mn-doped samples show a weak peak of ZnMn 2O 4 apart from the other usual peaks of ZnO and the intensity of this impurity peak has been further increased for 5 at% of Mn doping. So beyond 3 at% doping, single-phase behavior is destroyed. Band gap for all the 2 at% Mn-doped samples has been estimated to be between 3.21 and 3.19 eV and the reason for this low band gap values has been explained through the grain boundary trapping model. The room-temperature resistivity measurement shows an increase of resistivity up to 48 h of milling and with further milling it saturates. The defect state of these samples has been investigated using the positron annihilation lifetime (PAL) spectroscopy technique. Here all the relevant lifetime parameters of positron i.e. free annihilation ( τ1) at defect site ( τ2) and average ( τav) increases with milling time.

  4. Synthesis and characterization of single-phase Mn-doped ZnO

    International Nuclear Information System (INIS)

    Chattopadhyay, S.; Dutta, S.; Banerjee, A.; Jana, D.; Bandyopadhyay, S.; Chattopadhyay, S.; Sarkar, A.

    2009-01-01

    Different samples of Zn 1-x Mn x O series have been prepared using conventional solid-state sintering method. We identified up to what extent doping will enable us to synthesize single-phase polycrystalline Mn-doped ZnO sample, which is one of the prerequisites for dilute magnetic semiconductor, and we have analyzed its some other physical aspects. In synthesizing the samples, proportion of Mn varies from 1 to 5 at%. However, the milling time varied (6, 12, 24, 48 and 96 h) only for 2 at% Mn-doped samples while for other samples (1, 3, 4 and 5 at% Mn doped) the milling time has been fixed to 96 h. Room-temperature X-ray diffraction (XRD) data reveal that all of the prepared samples up to 3 at% of Mn doping exhibit wurtzite-type structure, and no segregation of Mn and/or its oxides has been found. The 4 at% Mn-doped samples show a weak peak of ZnMn 2 O 4 apart from the other usual peaks of ZnO and the intensity of this impurity peak has been further increased for 5 at% of Mn doping. So beyond 3 at% doping, single-phase behavior is destroyed. Band gap for all the 2 at% Mn-doped samples has been estimated to be between 3.21 and 3.19 eV and the reason for this low band gap values has been explained through the grain boundary trapping model. The room-temperature resistivity measurement shows an increase of resistivity up to 48 h of milling and with further milling it saturates. The defect state of these samples has been investigated using the positron annihilation lifetime (PAL) spectroscopy technique. Here all the relevant lifetime parameters of positron i.e. free annihilation (τ 1 ) at defect site (τ 2 ) and average (τ av ) increases with milling time.

  5. Identification of Zn-vacancy-hydrogen complexes in ZnO single crystals: A challenge to positron annihilation spectroscopy

    Science.gov (United States)

    Brauer, G.; Anwand, W.; Grambole, D.; Grenzer, J.; Skorupa, W.; Čížek, J.; Kuriplach, J.; Procházka, I.; Ling, C. C.; So, C. K.; Schulz, D.; Klimm, D.

    2009-03-01

    A systematic study of various, nominally undoped ZnO single crystals, either hydrothermally grown (HTG) or melt grown (MG), has been performed. The crystal quality has been assessed by x-ray diffraction, and a comprehensive estimation of the detailed impurity and hydrogen contents by inductively coupled plasma mass spectrometry and nuclear reaction analysis, respectively, has been made also. High precision positron lifetime experiments show that a single positron lifetime is observed in all crystals investigated, which clusters at 180-182 ps and 165-167 ps for HTG and MG crystals, respectively. Furthermore, hydrogen is detected in all crystals in a bound state with a high concentration (at least 0.3at.% ), whereas the concentrations of other impurities are very small. From ab initio calculations it is suggested that the existence of Zn-vacancy-hydrogen complexes is the most natural explanation for the given experimental facts at present. Furthermore, the distribution of H at a metal/ZnO interface of a MG crystal, and the H content of a HTG crystal upon annealing and time afterward has been monitored, as this is most probably related to the properties of electrical contacts made at ZnO and the instability in p -type conductivity observed at ZnO nanorods in literature. All experimental findings and presented theoretical considerations support the conclusion that various types of Zn-vacancy-hydrogen complexes exist in ZnO and need to be taken into account in future studies, especially for HTG materials.

  6. Growth of compact arrays of optical quality single crystalline ZnO

    Indian Academy of Sciences (India)

    We report the synthesis and optical properties of compact and aligned ZnO nanorod arrays (dia, ∼ 50–200 nm) grown on a glass substrate with varying seed particle density. The suspension of ZnO nanoparticles (size, ∼ 15 nm) of various concentrations are used as seed layer for the growth of nanorod arrays via ...

  7. Intrinsic magnetism of a series of Co substituted ZnO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Lv Peiwen [Laboratory of Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, National Engineering Research Center for Optoelectronic Crystalline Materials, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Huang Feng [Laboratory of Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, National Engineering Research Center for Optoelectronic Crystalline Materials, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Chu Wangsheng [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, 100049 Beijing (China); Lin Zhang [Laboratory of Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, National Engineering Research Center for Optoelectronic Crystalline Materials, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Chen Dagui [Laboratory of Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, National Engineering Research Center for Optoelectronic Crystalline Materials, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Li Wei [Laboratory of Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, National Engineering Research Center for Optoelectronic Crystalline Materials, Chinese Academy of Sciences, Fuzhou, Fujian 350002 (China); Chen Dongliang [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, 100049 Beijing (China); Wu Ziyu [Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, 100049 Beijing (China)

    2008-01-23

    Magnetic properties of a series of well-substituted Zn{sub 1-x}Co{sub x}O (x = 0.018,0.036 and 0.05) single crystals were studied. A typical paramagnetic anisotropy property, which strengthens when x decreases, was found. A magnetization step was observed at 2 K when the magnetic field is parallel to the c axis, indicating that paramagnetic anisotropy is the origin of the strong crystal field effect on Co{sup 2+} ions in ZnO lattices. The Co{sup 2+} single-ion anisotropy parameter 2D is obtained as 7.5 K. The effective moment of Co{sup 2+} takes the values 2.7 {mu}{sub B}, 1.82 {mu}{sub B}, 1.49 {mu}{sub B} when x = 0.018, 0.036 and 0.05, revealing that more antiferromagnetic coupling between Co{sup 2+} ions arises in the perfect crystal when x increases.

  8. Photoluminescence quenching, structures, and photovoltaic properties of ZnO nanostructures decorated plasma grown single walled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Aïssa, Brahim, E-mail: brahim.aissa@mpbc.ca [University of Quebec, Centre Énergie, Matériaux et Télécommunications, INRS-EMT (Canada); Nedil, Mourad [Telebec Wireless Underground Communication Laboratory, UQAT (Canada); Belaidi, Abdelhak; Isaifan, Rima J. [Hamad Bin Khalifa University, Qatar Foundation, Qatar Environment and Energy Research Institute (Qatar); Bentouaf, Ali [University Hassiba Ben Bouali, Physics Department, Faculty of Science (Algeria); Fauteux, Christian; Therriault, Daniel [École Polytechnique de Montréal, Laboratory for Multiscale Mechanics (LM2), Mechanical Engineering Department (Canada)

    2017-05-15

    Zinc oxide (ZnO) nanostructures were successfully grown directly on single walled carbon nanotubes (SWCNT) template through the CO{sub 2} laser-induced chemical liquid deposition (LCLD) process. Photoluminescence (PL) of the deposited ZnO/SWCNT hybrid composites exhibits, at room temperature, a narrow near UV band located at 390 nm with no emission bands in the visible region, indicating a high degree of crystalline quality of the ZnO nanostructures. Moreover, when the relative SWCNT loads are varied within the composites, the PL intensity and the diffused optical reflectance diminish in comparison with those of ZnO alone, owing to the transfer of photo-excited electrons from ZnO to the SWCNT, and the enhancement of the optical absorbance, respectively. Finally, these ZnO/SWCNT hybrid composites are integrated into a heterojunction photovoltaic-based device, using PEDOT:PSS on ITO/glass substrate. The devices show an evident p–n junction behavior in the dark, and a clear I–V curve shift downward when illuminated with an open-circuit voltage of 1.1 V, a short circuit current density of 14.05 μA cm{sup −2}, and a fill factor of ∼35%. These results indicate that these composites fabricated via LCLD process could be promising for optoelectronic and energy-harvesting devices.

  9. Growing vertical ZnO nanorod arrays within graphite: efficient isolation of large size and high quality single-layer graphene.

    Science.gov (United States)

    Ding, Ling; E, Yifeng; Fan, Louzhen; Yang, Shihe

    2013-07-18

    We report a unique strategy for efficiently exfoliating large size and high quality single-layer graphene directly from graphite into DMF dispersions by growing ZnO nanorod arrays between the graphene layers in graphite.

  10. Synthesis and characterization of single-phase Mn-doped ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Chattopadhyay, S.; Dutta, S.; Banerjee, A.; Jana, D. [Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700 009, West Bengal (India); Bandyopadhyay, S., E-mail: sbaphy@caluniv.ac.i [Department of Physics, University of Calcutta, 92 Acharya Prafulla Chandra Road, Kolkata 700 009, West Bengal (India); Chattopadhyay, S. [Department of Physics, Taki Government College, Taki 743 429, West Bengal (India); Sarkar, A. [Department of Physics, Bangabasi Morning College, 19 Rajkumar Chakraborty Sarani, Kolkata 700 009, West Bengal (India)

    2009-05-01

    Different samples of Zn{sub 1-x}Mn{sub x}O series have been prepared using conventional solid-state sintering method. We identified up to what extent doping will enable us to synthesize single-phase polycrystalline Mn-doped ZnO sample, which is one of the prerequisites for dilute magnetic semiconductor, and we have analyzed its some other physical aspects. In synthesizing the samples, proportion of Mn varies from 1 to 5 at%. However, the milling time varied (6, 12, 24, 48 and 96 h) only for 2 at% Mn-doped samples while for other samples (1, 3, 4 and 5 at% Mn doped) the milling time has been fixed to 96 h. Room-temperature X-ray diffraction (XRD) data reveal that all of the prepared samples up to 3 at% of Mn doping exhibit wurtzite-type structure, and no segregation of Mn and/or its oxides has been found. The 4 at% Mn-doped samples show a weak peak of ZnMn{sub 2}O{sub 4} apart from the other usual peaks of ZnO and the intensity of this impurity peak has been further increased for 5 at% of Mn doping. So beyond 3 at% doping, single-phase behavior is destroyed. Band gap for all the 2 at% Mn-doped samples has been estimated to be between 3.21 and 3.19 eV and the reason for this low band gap values has been explained through the grain boundary trapping model. The room-temperature resistivity measurement shows an increase of resistivity up to 48 h of milling and with further milling it saturates. The defect state of these samples has been investigated using the positron annihilation lifetime (PAL) spectroscopy technique. Here all the relevant lifetime parameters of positron i.e. free annihilation (tau{sub 1}) at defect site (tau{sub 2}) and average (tau{sub av}) increases with milling time.

  11. Trimethylamine Sensors Based on Au-Modified Hierarchical Porous Single-Crystalline ZnO Nanosheets

    Directory of Open Access Journals (Sweden)

    Fanli Meng

    2017-06-01

    Full Text Available It is of great significance for dynamic monitoring of foods in storage or during the transportation process through on-line detecting trimethylamine (TMA. Here, TMA were sensitively detected by Au-modified hierarchical porous single-crystalline ZnO nanosheets (HPSCZNs-based sensors. The HPSCZNs were synthesized through a one-pot wet-chemical method followed by an annealing treatment. Polyethyleneimine (PEI was used to modify the surface of the HPSCZNs, and then the PEI-modified samples were mixed with Au nanoparticles (NPs sol solution. Electrostatic interactions drive Au nanoparticles loading onto the surface of the HPSCZNs. The Au-modified HPSCZNs were characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM, transmission electron microscopy (TEM and energy dispersive spectrum (EDS, respectively. The results show that Au-modified HPSCZNs-based sensors exhibit a high response to TMA. The linear range is from 10 to 300 ppb; while the detection limit is 10 ppb, which is the lowest value to our knowledge.

  12. Trimethylamine Sensors Based on Au-Modified Hierarchical Porous Single-Crystalline ZnO Nanosheets.

    Science.gov (United States)

    Meng, Fanli; Zheng, Hanxiong; Sun, Yufeng; Li, Minqiang; Liu, Jinhuai

    2017-06-22

    It is of great significance for dynamic monitoring of foods in storage or during the transportation process through on-line detecting trimethylamine (TMA). Here, TMA were sensitively detected by Au-modified hierarchical porous single-crystalline ZnO nanosheets (HPSCZNs)-based sensors. The HPSCZNs were synthesized through a one-pot wet-chemical method followed by an annealing treatment. Polyethyleneimine (PEI) was used to modify the surface of the HPSCZNs, and then the PEI-modified samples were mixed with Au nanoparticles (NPs) sol solution. Electrostatic interactions drive Au nanoparticles loading onto the surface of the HPSCZNs. The Au-modified HPSCZNs were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and energy dispersive spectrum (EDS), respectively. The results show that Au-modified HPSCZNs-based sensors exhibit a high response to TMA. The linear range is from 10 to 300 ppb; while the detection limit is 10 ppb, which is the lowest value to our knowledge.

  13. Flower-like hierarchical structures consisting of porous single-crystalline ZnO nanosheets and their gas sensing properties to volatile organic compounds (VOCs)

    Energy Technology Data Exchange (ETDEWEB)

    Meng, Fanli, E-mail: flmeng@iim.ac.cn [Research Center for Biomimetic Functional Materials and Sensing Devices, Institute of Intelligent Machines, Chinese Academy of Sciences, Hefei 230031 (China); Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Hou, Nannan [Research Center for Biomimetic Functional Materials and Sensing Devices, Institute of Intelligent Machines, Chinese Academy of Sciences, Hefei 230031 (China); Department of Chemistry, University of Science and Technology of China, Hefei 230026 (China); Ge, Sheng [Department of Mechanical and Automotive Engineering, Anhui Polytechnic University, Wuhu 241000 (China); Sun, Bai [Research Center for Biomimetic Functional Materials and Sensing Devices, Institute of Intelligent Machines, Chinese Academy of Sciences, Hefei 230031 (China); Jin, Zhen, E-mail: zjin@iim.ac.cn [Research Center for Biomimetic Functional Materials and Sensing Devices, Institute of Intelligent Machines, Chinese Academy of Sciences, Hefei 230031 (China); Shen, Wei; Kong, Lingtao; Guo, Zheng [Research Center for Biomimetic Functional Materials and Sensing Devices, Institute of Intelligent Machines, Chinese Academy of Sciences, Hefei 230031 (China); Sun, Yufeng, E-mail: sunyufeng118@126.com [Department of Mechanical and Automotive Engineering, Anhui Polytechnic University, Wuhu 241000 (China); Wu, Hao; Wang, Chen [Department of Materials Science and Engineering, University of California, Los Angeles, CA 90095 (United States); Li, Minqiang [Research Center for Biomimetic Functional Materials and Sensing Devices, Institute of Intelligent Machines, Chinese Academy of Sciences, Hefei 230031 (China)

    2015-03-25

    Highlights: • Flower-like hierarchical structures consisting of porous single-crystalline ZnO nanosheets were synthesized. • The flower-like hierarchical structured ZnO exhibited higher response and shorter response and recovery times. • The sensing mechanism of the flower-like hierarchical has been systematically analyzed. - Abstract: Flower-like hierarchical structures consisting of porous single-crystalline ZnO nanosheets (FHPSCZNs) were synthesized by a one-pot wet-chemical method followed by an annealing treatment, which combined the advantages between flower-like hierarchical structure and porous single-crystalline structure. XRD, SEM and HRTEM were used to characterize the synthesized FHPSCZN samples. The sensing properties of the FHPSCZN sensor were also investigated by comparing with ZnO powder sensor, which exhibited higher response and shorter response and recovery times. The sensing mechanism of the FHPSCZN sensor has been further analyzed from the aspects of electronic transport and gas diffusion.

  14. Flower-like hierarchical structures consisting of porous single-crystalline ZnO nanosheets and their gas sensing properties to volatile organic compounds (VOCs)

    International Nuclear Information System (INIS)

    Meng, Fanli; Hou, Nannan; Ge, Sheng; Sun, Bai; Jin, Zhen; Shen, Wei; Kong, Lingtao; Guo, Zheng; Sun, Yufeng; Wu, Hao; Wang, Chen; Li, Minqiang

    2015-01-01

    Highlights: • Flower-like hierarchical structures consisting of porous single-crystalline ZnO nanosheets were synthesized. • The flower-like hierarchical structured ZnO exhibited higher response and shorter response and recovery times. • The sensing mechanism of the flower-like hierarchical has been systematically analyzed. - Abstract: Flower-like hierarchical structures consisting of porous single-crystalline ZnO nanosheets (FHPSCZNs) were synthesized by a one-pot wet-chemical method followed by an annealing treatment, which combined the advantages between flower-like hierarchical structure and porous single-crystalline structure. XRD, SEM and HRTEM were used to characterize the synthesized FHPSCZN samples. The sensing properties of the FHPSCZN sensor were also investigated by comparing with ZnO powder sensor, which exhibited higher response and shorter response and recovery times. The sensing mechanism of the FHPSCZN sensor has been further analyzed from the aspects of electronic transport and gas diffusion

  15. Emission characteristics of electrically- and optically-pumped single ZnO micro-spherical crystal

    Science.gov (United States)

    Nakamura, D.; Shimogaki, T.; Tetsuyama, N.; Fusazaki, K.; Mizokami, Y.; Higashihata, M.; Ikenoue, H.; Okada, T.

    2014-03-01

    Zinc oxide (ZnO) nano/microstructures have been attractive as the building blocks for the efficient opto-electronic devices in the ultraviolet (UV) region. We have succeeded in growing the ZnO micro/nanosphere by a simple laser ablation in the air, and therefore we have obtained UV lasing from the sphere under optical pumping. Recently, large size of several 10 micrometer ZnO microspheres were grown using Nd:YAG laser without Q-switching, and ZnO microsphere/p-GaN heterojunction were fabricated to obtain the electroluminescence (EL) from the microsphere by electrical pumping. Room-temperature EL in near-UV region with peak wavelength of 400 nm is observed under forward bias.

  16. Deep levels due to hydrogen in ZnO single crystals

    Science.gov (United States)

    Parmar, Narendra; Weber, Marc; Lynn, Kelvin

    2009-05-01

    Hydrogen impurities and oxygen vacancies are involved in the ˜0.7 eV shift of the optical absorption edge of ZnO. Deuterium causes a smaller shift. Titanium metal is used to bind hydrogen as it diffuses out of ZnO. Positron annihilation spectroscopy coupled with other techniques point to the presence of oxygen vacancies. Removing hydrogen followed by annealing in oxygen reduces the carrier concentration.

  17. A third kind growth model of tetrapod: Rod-based single crystal ZnO tetrapod nanostructure

    International Nuclear Information System (INIS)

    Gong, J.F.; Huang, H.B.; Wang, Z.Q.; Zhao, X.N.; Yang, S.G.; Yu Zhongzhen

    2008-01-01

    In this paper, rod-based ZnO tetrapods were successfully synthesized by burning Zn particles in air covered with two firebricks. The products show hexagonal wurtzite phase. The microstructures of the tetrapod were studied carefully by scanning electron microscope (SEM), transmission electron microscope (TEM), SAED and HRTEM. The results show that tetrapod has single crystalline phase with one broader nanorod growing along [0 0 0 1] direction, three triangular nanosheets, growing out of the three trisection planes along [101-bar0] direction, and three epitaxial nanowires, growing from each tip of the triangular nanosheets. Based on the experimental results, a rod-based growth model was proposed to interpret its growth mechanism. Room temperature photoluminescence spectrum reveals that the ZnO tetrapods have ultra violet (UV) emission band (389 nm) and a green emission band (517 nm)

  18. The Positron-Electron Correlation Energy In ZnO Calculated With The Modified Single Wave Function Of Positron

    International Nuclear Information System (INIS)

    Chau Van Tao; Trinh Hoa Lang; Le Hoang Chien; Nguyen Huu Loc; Nguyen Anh Tuan

    2011-01-01

    Positron-electron correlation energy of the ZnO - positron system is studied on assumption that positron binds with the outer shell electrons of Zinc and Oxygen to form the pseudo ZnO - positron molecule before it annihilates with one of these electrons. In this work, the single wave function for positron is form by LCAO approximation and is modified according to the principle of linear superposition, and by using Variational Quantum Monte Carlo method (VQMC) [7] the correlation energy of this system is estimated with the value E c e-p = - 9.3 ± 1.1 eV. In the theoretical aspect it turns out that this result is more reasonable and closer to those of other methods [3] than the one which is done without modifying the wave function of positron [1]. To confirm this legitimate approach, however, the further calculations of positron annihilation rate in ZnO have to be carried out in our next work. (author)

  19. Effect of KrF excimer laser irradiation on the surface changes and photoelectric properties of ZnO single crystal

    Energy Technology Data Exchange (ETDEWEB)

    Zeng, Yong [Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China); Beijing Engineering Research Center of 3D Printing for Digital Medical Health, Beijing International Cooperation Base of 3D Printing for Digital MedicalHealth, Beijing University of Technology, Beijing 100124 (China); Zhao, Yan [Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China); Jiang, Yijian, E-mail: yjjiang@bjut.edu.cn [Institute of Laser Engineering, Beijing University of Technology, Beijing 100124 (China); Beijing Engineering Research Center of 3D Printing for Digital Medical Health, Beijing International Cooperation Base of 3D Printing for Digital MedicalHealth, Beijing University of Technology, Beijing 100124 (China)

    2016-06-25

    In this paper, the effect of KrF pulsed excimer laser irradiation on the structural, surface morphology, photoluminescence and electrical properties of ZnO single crystal was investigated. Compared to the as-grown sample, at an irradiation energy density of 257 mJ/cm{sup 2}, the ZnO single crystal exhibits a series of phenomenon: XRD and Raman results show that the crystallization of ZnO quality change slightly, resistivity is decreased by two orders of magnitude, carrier concentration is increased by one order of magnitude. After laser irradiation, the surface shows some strip lines and no cracks. Formula calculation and simulation results show that the stripes are not caused by surface melting. We speculate that these stripes are caused by the precipitation of ZnO material inside to the surface. Due to the reduction of oxygen vacancies, UV emission has been enhanced and visible emission has been declined after irradiation. After the laser irradiation, the visible light of ZnO surface can be regulated. The experimental results show that KrF laser irradiation could effectively improve the optical and electrical properties of ZnO single crystal, which is important for the application of high performance of emitting optoelectronic devices. - Highlights: • After laser irradiation, the surface shows some strip lines and no cracks. • The visible light of as-irradiated ZnO surface can be regulated to four colors. • The electrical properties of as-irradiated ZnO has been improved greatly.

  20. Formation of Isolated Zn Vacancies in ZnO Single Crystals by Absorption of Ultraviolet Radiation: A Combined Study Using Positron Annihilation, Photoluminescence, and Mass Spectroscopy

    Science.gov (United States)

    Khan, Enamul H.; Weber, Marc H.; McCluskey, Matthew D.

    2013-07-01

    Positron annihilation spectra reveal isolated zinc vacancy (VZn) creation in single-crystal ZnO exposed to 193-nm radiation at 100mJ/cm2 fluence. The appearance of a photoluminescence excitation peak at 3.18 eV in irradiated ZnO is attributed to an electronic transition from the VZn acceptor level at ˜100meV to the conduction band. The observed VZn density profile and hyperthermal Zn+ ion emission support zinc vacancy-interstitial Frenkel pair creation by exciting a wide 6.34 eV Zn-O antibonding state at 193-nm photon—a novel photoelectronic process for controlled VZn creation in ZnO.

  1. Optical and Magnetic Resonance Studies of Na-Diffused ZnO Bulk Single Crystals

    Science.gov (United States)

    Glaser, E. R.; Garces, N. Y.; Parmar, N. S.; Lynn, K. G.

    2013-03-01

    Photoluminescence (PL) and optically-detected magnetic resonance (ODMR) at 24 GHz were performed on bulk ZnO crystals after diffusion of Na impurities that were explored as an alternate doping source for p-type conductivity. PL at 2K revealed strong bandedge excitonic recombination at 3.361 eV and a broad ``orange'' PL band at 2.17 eV with FWHM of ~0.5 eV. This ``orange'' emission is very similar to that reported previously[1] from thermoluminescence measurements of intentionally Na-doped bulk ZnO and, thus, strongly suggests the incorporation and activation of the Na-diffused impurities. ODMR performed on this ``orange'' PL revealed two signals. The first was a sharp feature with g-value of ~1.96 and is a well-known ``fingerprint'' of shallow donors in ZnO. The second signal consisted of a pair of lines with an intensity ratio of ~3:1 and with g-tensors (g∥,g⊥ ~2.008-2.029) very similar to ESR signals attributed previously[2] to holes bound to Na impurities located at the axial and non-axial Zn host lattice sites in Na-doped ZnO. Thus, the ``orange'' PL can be tentatively assigned to radiative recombination between residual shallow donors and deep Na-related hole traps.

  2. Defects in N{sup +} ion-implanted ZnO single crystals studied by positron annihilation and Hall effect

    Energy Technology Data Exchange (ETDEWEB)

    Brauer, G.; Anwand, W.; Skorupa, W. [Institut fuer Ionenstrahlphysik und Materialforschung, Forschungszentrum Rossendorf, Dresden (Germany); Kuriplach, J.; Melikhova, O.; Cizek, J.; Prochazka, I. [Department of Low Temperature Physics, Faculty of Mathematics and Physics, Charles Univ., Prague (Czech Republic); Wenckstern, H. von; Brandt, M.; Lorenz, M.; Grundmann, M. [Institut fuer Experimentelle Physik II, Universitaet Leipzig (Germany)

    2007-07-01

    High quality ZnO single crystals of dimensions 10 x 10 x 0.5 mm{sup 3}, grown by a hydrothermal approach, have been implanted by 40 keV N{sup +} ions to a fluence of 1 x 10{sup 15} cm{sup -2} at room temperature. Their properties revealed by positron annihilation and Hall effect measurements are given in the as-grown and as-irradiated states, and after post-implantation annealing in an oxygen ambient at 200 C and 500 C. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Wafer-Scale High-Throughput Ordered Growth of Vertically Aligned ZnO Nanowire Arrays

    KAUST Repository

    Wei, Yaguang

    2010-09-08

    This article presents an effective approach for patterned growth of vertically aligned ZnO nanowire (NW) arrays with high throughput and low cost at wafer scale without using cleanroom technology. Periodic hole patterns are generated using laser interference lithography on substrates coated with the photoresist SU-8. ZnO NWs are selectively grown through the holes via a low-temperature hydrothermal method without using a catalyst and with a superior control over orientation, location/density, and as-synthesized morphology. The development of textured ZnO seed layers for replacing single crystalline GaN and ZnO substrates extends the large-scale fabrication of vertically aligned ZnO NW arrays on substrates of other materials, such as polymers, Si, and glass. This combined approach demonstrates a novel method of manufacturing large-scale patterned one-dimensional nanostructures on various substrates for applications in energy harvesting, sensing, optoelectronics, and electronic devices. © 2010 American Chemical Society.

  4. Toward single-mode random lasing within a submicrometre-sized spherical ZnO particle film

    International Nuclear Information System (INIS)

    Niyuki, Ryo; Fujiwara, Hideki; Sasaki, Keiji; Ishikawa, Yoshie; Koshizaki, Naoto; Tsuji, Takeshi

    2016-01-01

    We had recently reported unique random laser action such as quasi-single-mode and low-threshold lasing from a submicrometre-sized spherical ZnO nanoparticle film with polymer particles as defects. The present study demonstrates a novel approach to realize single-mode random lasing by adjusting the sizes of the defect particles. From the dependence of random lasing properties on defect size, we find that the average number of lasing peaks can be modified by the defect size, while other lasing properties such as lasing wavelengths and thresholds remain unchanged. These results suggest that lasing wavelengths and thresholds are determined by the resonant properties of the surrounding scatterers, while the defect size stochastically determines the number of lasing peaks. Therefore, if we optimize the sizes of the defects and scatterers, we can intentionally induce single-mode lasing even in a random structure (Fujiwara et al 2013 Appl. Phys. Lett. 102 061110). (paper)

  5. Origin of green luminescence in hydrothermally grown ZnO single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Čížek, J., E-mail: jakub.cizek@mff.cuni.cz; Hruška, P.; Melikhova, O.; Procházka, I. [Department of Low-Temperature Physics, Charles University in Prague, V Holešovičkách 2, CZ-180 00, Prague 8 (Czech Republic); Valenta, J. [Department of Chemical Physics and Optics, Charles University in Prague, Ke Karlovu 3, CZ-121 16, Prague 2 (Czech Republic); Novotný, M.; Bulíř, J. [Academy of Science of the Czech Republic, Institute of Physics, Na Slovance 2, CZ-182 21 Praha 8 (Czech Republic)

    2015-06-22

    Combining photoluminescence and positron annihilation studies of hydrothermally grown ZnO crystals with stoichiometry varied by controlled annealing enabled us to clarify the origin of green luminescence. It was found that green luminescence in ZnO has multiple origins and consists of a band at 2.3(1) eV due to recombination of electrons of the conduction band by zinc vacancy acceptors coupled with hydrogen and a band at 2.47(2) eV related to oxygen vacancies. The as-grown ZnO crystals contain zinc vacancies associated with hydrogen and exhibit a green luminescence at 2.3(1) eV. Annealing in Zn vapor removed zinc vacancies and introduced oxygen vacancies. This led to disappearance of the green luminescence band at 2.3(1) eV and appearance of a green emission at higher energy of 2.47(2) eV. Moreover, the color of the crystal was changed from colorless to dark red. In contrast, annealing of the as-grown crystal in Cd vapor did not remove zinc vacancies and did not cause any significant change of green luminescence nor change in coloration.

  6. Origin of green luminescence in hydrothermally grown ZnO single crystals

    International Nuclear Information System (INIS)

    Čížek, J.; Hruška, P.; Melikhova, O.; Procházka, I.; Valenta, J.; Novotný, M.; Bulíř, J.

    2015-01-01

    Combining photoluminescence and positron annihilation studies of hydrothermally grown ZnO crystals with stoichiometry varied by controlled annealing enabled us to clarify the origin of green luminescence. It was found that green luminescence in ZnO has multiple origins and consists of a band at 2.3(1) eV due to recombination of electrons of the conduction band by zinc vacancy acceptors coupled with hydrogen and a band at 2.47(2) eV related to oxygen vacancies. The as-grown ZnO crystals contain zinc vacancies associated with hydrogen and exhibit a green luminescence at 2.3(1) eV. Annealing in Zn vapor removed zinc vacancies and introduced oxygen vacancies. This led to disappearance of the green luminescence band at 2.3(1) eV and appearance of a green emission at higher energy of 2.47(2) eV. Moreover, the color of the crystal was changed from colorless to dark red. In contrast, annealing of the as-grown crystal in Cd vapor did not remove zinc vacancies and did not cause any significant change of green luminescence nor change in coloration

  7. Origin of green luminescence in hydrothermally grown ZnO single crystals

    Science.gov (United States)

    Čížek, J.; Valenta, J.; Hruška, P.; Melikhova, O.; Procházka, I.; Novotný, M.; Bulíř, J.

    2015-06-01

    Combining photoluminescence and positron annihilation studies of hydrothermally grown ZnO crystals with stoichiometry varied by controlled annealing enabled us to clarify the origin of green luminescence. It was found that green luminescence in ZnO has multiple origins and consists of a band at 2.3(1) eV due to recombination of electrons of the conduction band by zinc vacancy acceptors coupled with hydrogen and a band at 2.47(2) eV related to oxygen vacancies. The as-grown ZnO crystals contain zinc vacancies associated with hydrogen and exhibit a green luminescence at 2.3(1) eV. Annealing in Zn vapor removed zinc vacancies and introduced oxygen vacancies. This led to disappearance of the green luminescence band at 2.3(1) eV and appearance of a green emission at higher energy of 2.47(2) eV. Moreover, the color of the crystal was changed from colorless to dark red. In contrast, annealing of the as-grown crystal in Cd vapor did not remove zinc vacancies and did not cause any significant change of green luminescence nor change in coloration.

  8. Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO

    International Nuclear Information System (INIS)

    Mtangi, W.; Nel, J.M.; Auret, F.D.; Chawanda, A.; Diale, M.; Nyamhere, C.

    2012-01-01

    We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8±0.3) meV that has been suggested as Zn i related and possibly H-complex related and (54.5±0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, X Zn . The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) . Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60×10 17 cm −3 at 200 °C to 4.37×10 18 cm -3 at 800 °C.

  9. Annealing and surface conduction on Hydrogen peroxide treated bulk melt-grown, single crystal ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Mtangi, W., E-mail: wilbert.mtangi@up.ac.za [University of Pretoria, Physics Department, Pretoria 0002 (South Africa); Nel, J.M.; Auret, F.D.; Chawanda, A.; Diale, M. [University of Pretoria, Physics Department, Pretoria 0002 (South Africa); Nyamhere, C. [Nelson Mandela Metropolitan University, Physics Department, P.O. Box 77000, Port Elizabeth 6031 (South Africa)

    2012-05-15

    We report on the studies carried out on hydrogen peroxide treated melt-grown, bulk single crystal ZnO samples. Results show the existence of two shallow donors in the as-received ZnO samples with energy levels (37.8{+-}0.3) meV that has been suggested as Zn{sub i} related and possibly H-complex related and (54.5{+-}0.9) meV, which has been assigned to an Al-related donor. Annealing studies performed on the hydrogen peroxide treated samples reveal the existence of a conductive channel in the samples in which new energy levels have been observed, Zn vacancies, related to the Group I elements, X{sub Zn}. The surface donor volume concentration of the conductive channel was calculated from a theory developed by Look (2007) . Results indicate an increase in the surface volume concentration with increasing annealing temperature from 60 Multiplication-Sign 10{sup 17} cm{sup -3} at 200 Degree-Sign C to 4.37 Multiplication-Sign 10{sup 18} cm{sup -3} at 800 Degree-Sign C.

  10. Single-Step Antimicrobial And Moisture Management Finishing Of Pc Fabric Using Zno Nanoparticles

    Directory of Open Access Journals (Sweden)

    Ashraf Munir

    2017-09-01

    Full Text Available Functionalization of textile fabrics with metal oxide nanoparticles can be used to add antibacterial and moisture management properties to them. Current work focuses on the development of these properties on polyester/cotton woven fabrics by treating them with zinc oxide nanoparticles for workwear and sportswear applications. Zinc oxide nanoparticles, prepared by sol-gel method, were applied on fabric samples, which were then tested for antibacterial and moisture management properties using standard test methods AATCC 147 with Staphylococcus aureus and AATCC 195, respectively. It was found that application of ZnO nanoparticles improved both these properties with smaller particle imparting larger effects on both of them.

  11. SiO2/ZnO Composite Hollow Sub-Micron Fibers: Fabrication from Facile Single Capillary Electrospinning and Their Photoluminescence Properties

    Directory of Open Access Journals (Sweden)

    Guanying Song

    2017-02-01

    Full Text Available In this work, SiO2/ZnO composite hollow sub-micron fibers were fabricated by a facile single capillary electrospinning technique followed by calcination, using tetraethyl orthosilicate (TEOS, polyvinylpyrrolidone (PVP and ZnO nanoparticles as raw materials. The characterization results of the scanning electron microscopy (SEM, transmission electron microscopy (TEM, X-ray diffraction (XRD and Fourier transform infrared spectroscopy (FT-IR spectra indicated that the asprepared composite hollow fibers consisted of amorphous SiO2 and hexagonal wurtzite ZnO. The products revealed uniform tubular structure with outer diameters of 400–500 nm and wall thickness of 50–60 nm. The gases generated and the directional escaped mechanism was proposed to illustrate the formation of SiO2/ZnO composite hollow sub-micron fibers. Furthermore, a broad blue emission band was observed in the photoluminescence (PL of SiO2/ZnO composite hollow sub-micron fibers, exhibiting great potential applications as blue light-emitting candidate materials.

  12. Nuclear reaction analysis of Ge ion-implanted ZnO bulk single crystals: The evaluation of the displacement in oxygen lattices

    Energy Technology Data Exchange (ETDEWEB)

    Kamioka, K.; Oga, T.; Izawa, Y. [College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184-8584 (Japan); Kuriyama, K., E-mail: kuri@ionbeam.hosei.ac.jp [College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Department of Arts and Science, Osaka Kyouiku University, Kashiwara, Osaka 582-8582 (Japan); Kinomura, A. [National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

    2014-08-01

    The displacement of oxygen lattices in Ge ion-implanted ZnO bulk single crystals is studied by nuclear reaction analysis (NAR), photoluminescence (PL), and Van der Pauw methods. The Ge ion-implantation (net concentration: 2.6 × 10{sup 20} cm{sup −3}) into ZnO is performed using a multiple-step energy. The high resistivity of ∼10{sup 3} Ω cm in un-implanted samples remarkably decreased to ∼10{sup −2} Ω cm after implanting Ge-ion and annealing subsequently. NRA measurements of as-implanted and annealed samples suggest the existence of the lattice displacement of O atoms acting as acceptor defects. As O related defects still remain after annealing, these defects are not attributed to the origin of the low resistivity in 800 and 1000 °C annealed ZnO.

  13. Nuclear reaction analysis of Ge ion-implanted ZnO bulk single crystals: The evaluation of the displacement in oxygen lattices

    Science.gov (United States)

    Kamioka, K.; Oga, T.; Izawa, Y.; Kuriyama, K.; Kushida, K.; Kinomura, A.

    2014-08-01

    The displacement of oxygen lattices in Ge ion-implanted ZnO bulk single crystals is studied by nuclear reaction analysis (NAR), photoluminescence (PL), and Van der Pauw methods. The Ge ion-implantation (net concentration: 2.6 × 1020 cm-3) into ZnO is performed using a multiple-step energy. The high resistivity of ∼103 Ω cm in un-implanted samples remarkably decreased to ∼10-2 Ω cm after implanting Ge-ion and annealing subsequently. NRA measurements of as-implanted and annealed samples suggest the existence of the lattice displacement of O atoms acting as acceptor defects. As O related defects still remain after annealing, these defects are not attributed to the origin of the low resistivity in 800 and 1000 °C annealed ZnO.

  14. Persistent photoconductivity and photo-responsible defect in 30 MeV-electron irradiated single crystal ZnO

    International Nuclear Information System (INIS)

    Kuriyama, K.; Matsumoto, K.; Kushida, K.; Xu, Q.

    2010-01-01

    Persistent photoconductivity (PPC) in 30-MeV electron irradiated ZnO single crystals is studied by excitation using light emitting diodes (LEDs) with various wavelengths. The decay transient of the photoconductivity shows relaxation times in the range of a few ten days for the illumination at 90 K and a few hours at room temperature. An electron paramagnetic resonance (EPR) signal with g-value = 2.005 appears after illumination of blue LED, suggesting the transfer from the artificially introduced oxygen vacancy of 2+ charge state to the metastable + charge state. Once generated, the metastable state does not immediately decay into the 2+ charge state because of energetic barriers of ∼190 meV, supporting the mechanism of PPC proposed by Van de Walle.

  15. P-type single-crystalline ZnO films obtained by (N,O) dual implantation through dynamic annealing process

    Science.gov (United States)

    Zhang, Zhiyuan; Huang, Jingyun; Chen, Shanshan; Pan, Xinhua; Chen, Lingxiang; Ye, Zhizhen

    2016-12-01

    Single-crystalline ZnO films were grown on a-plane sapphire substrates by plasma-assisted molecular beam epitaxy technique. The films have been implanted with fixed fluence of 120 keV N and 130 keV O ions at 460 °C. Hall measurements show that the dually-implanted single-crystalline ZnO films exhibit p-type characteristics with hole concentration in the range of 2.1 × 1018-1.1 × 1019 cm-3, hole mobilities between 1.6 and 1.9 cm2 V-1 s-1, and resistivities in the range of 0.353-1.555 Ω cm. The ZnO films exhibit (002) (c-plane) orientation as identified by the X-ray diffraction pattern. It is confirmed that N ions were effectively implanted by SIMS results. Raman spectra, polarized Raman spectra, and X-ray photoelectron spectroscopy results reflect that the concentration of oxygen vacancies is reduced, which is attributed to O ion implantation. It is concluded that N and O implantation and dynamic annealing play a critical role in forming p-type single-crystalline ZnO films.

  16. Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays

    KAUST Repository

    Lu, Ming-Pei; Song, Jinhui; Lu, Ming-Yen; Chen, Min-Teng; Gao, Yifan; Chen, Lih-Juann; Wang, Zhong Lin

    2009-01-01

    Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive

  17. On single doping and co-doping of spray pyrolysed ZnO films: Structural, electrical and optical characterisation

    International Nuclear Information System (INIS)

    Vimalkumar, T.V.; Poornima, N.; Jinesh, K.B.; Kartha, C. Sudha; Vijayakumar, K.P.

    2011-01-01

    In this paper we present studies on ZnO thin films (prepared using Chemical Spray pyrolysis (CSP) technique) doped in two different ways; in one set, 'single doping' using indium was done while in the second set, 'co-doping' using indium and fluorine was adopted. In the former case, effect of in-situ as well as ex-situ doping using In was analyzed. Structural (XRD studies), electrical (I-V measurements) and optical characterizations (through absorption, transmission and photoluminescence studies) of the films were done. XRD analysis showed that, for spray-deposited ZnO films, ex-situ doping using Indium resulted in preferred (0 0 2) plane orientation, while in-situ doping caused preferred orientation along (1 0 0), (0 0 2), (1 0 1) planes; however for higher percentage of in-situ doping, orientation of grains changed from (0 0 2) plane to (1 0 1) plane. The co-doped films had (0 0 2) and (1 0 1) planes. Lowest resistivity (2 x 10 -3 Ω cm) was achieved for the films, doped with 1% Indium through in-situ method. Photoluminescence (PL) emissions of ex-situ doped and co-doped samples had two peaks; one was the 'near band edge' emission (NBE) and the other was the 'blue-green' emission. But interestingly the PL emission of in-situ doped samples exhibited only the 'near band edge' emission. Optical band gap of the films increased with doping percentage, in all cases of doping.

  18. Single and multi-layered core-shell structures based on ZnO nanorods obtained by aerosol assisted chemical vapor deposition

    Energy Technology Data Exchange (ETDEWEB)

    Sáenz-Trevizo, A.; Amézaga-Madrid, P.; Pizá-Ruiz, P.; Antúnez-Flores, W.; Ornelas-Gutiérrez, C.; Miki-Yoshida, M., E-mail: mario.miki@cimav.edu.mx

    2015-07-15

    Core–shell nanorod structures were prepared by a sequential synthesis using an aerosol assisted chemical vapor deposition technique. Several samples consisting of ZnO nanorods were initially grown over TiO{sub 2} film-coated borosilicate glass substrates, following the synthesis conditions reported elsewhere. Later on, a uniform layer consisting of individual Al, Ni, Ti or Fe oxides was grown onto ZnO nanorod samples forming the so-called single MO{sub x}/ZnO nanorod core–shell structures, where MO{sub x} was the metal oxide shell. Additionally, a three-layer core–shell sample was developed by growing Fe, Ti and Fe oxides alternately, onto the ZnO nanorods. The microstructure of the core–shell materials was characterized by grazing incidence X-ray diffraction, scanning and transmission electron microscopy. Energy dispersive X-ray spectroscopy was employed to corroborate the formation of different metal oxides. X-ray diffraction outcomes for single core–shell structures showed solely the presence of ZnO as wurtzite and TiO{sub 2} as anatase. For the multi-layered shell sample, the existence of Fe{sub 2}O{sub 3} as hematite was also detected. Morphological observations suggested the existence of an outer material grown onto the nanorods and further microstructural analysis by HR-STEM confirmed the development of core–shell structures in all cases. These studies also showed that the individual Al, Fe, Ni and Ti oxide layers are amorphous; an observation that matched with X-ray diffraction analysis where no apparent extra oxides were detected. For the multi-layered sample, the development of a shell consisting of three different oxide layers onto the nanorods was found. Overall results showed that no alteration in the primary ZnO core was produced during the growth of the shells, indicating that the deposition technique used herein was and it is suitable for the synthesis of homogeneous and complex nanomaterials high in quality and purity. In addition

  19. P-type single-crystalline ZnO films obtained by (Na,N) dual implantation through dynamic annealing process

    Science.gov (United States)

    Zhang, Zhiyuan; Huang, Jingyun; Chen, Shanshan; Pan, Xinhua; Chen, Lingxiang; Ye, Zhizhen

    2018-02-01

    Single-crystalline ZnO films were grown by plasma-assisted molecular beam epitaxy technique on c-plane sapphire substrates. The films have been implanted with fixed fluence of 130 keV Na and 90 keV N ions at 460 °C. It is observed that dually-implanted single crystalline ZnO films exhibit p-type characteristics with hole concentration in the range of 1.24 × 1016-1.34 × 1017 cm-3, hole mobilities between 0.65 and 8.37 cm2 V-1 s-1, and resistivities in the range of 53.3-80.7 Ω cm by Hall-effect measurements. There are no other secondary phase appearing, with (0 0 2) (c-plane) orientation after ion implantation as identified by the X-ray diffraction pattern. It is obtained that Na and N ions were successfully implanted and activated as acceptors measured by XPS and SIMS results. Also compared to other similar studies, lower amount of Na and N ions make p-type characteristics excellent as others deposited by traditional techniques. It is concluded that Na and N ion implantation and dynamic annealing are essential in forming p-type single-crystalline ZnO films.

  20. Phenolic Composition and Color of Single Cultivar Young Red Wines Made with Mencia and Alicante-Bouschet Grapes in AOC Valdeorras (Galicia, NW Spain

    Directory of Open Access Journals (Sweden)

    Eugenio Revilla

    2016-07-01

    Full Text Available Single cultivar wines made with two different red grape cultivars from AOC Valdeorras (Galicia, NW Spain, Mencia and Alicante Bouschet, were studied with the aim of determining their color and phenolic composition. Two sets of analyses were made on 30 wine samples of 2014 vintage, after malolactic fermentation took place, to evaluate several physicochemical characteristics from these wines related to color and polyphenols. Several parameters related with color and the general phenolic composition of wines (total phenols index, color intensity, hue, total anthocyans, total anthocyanins, colored anthocyanins, chemical age index, and total tannins were determined by UV-VIS spectrophotometry. Those analyses revealed that Alicante Bouschet wines presented, in general, a higher content of polyphenols and a more intense color than Mencia wines. Using HPLC-DAD, five anthocyanin monoglucosides and nine acylated anthocyanins were identified in both types of wine; each type of wine showed a distinctive anthocyanin fingerprint, as Alicante Bouschet wines contained a higher proportion of cyanidin-derived anthocyanins. Multivariate statistic studies were performed to both datasets to explore relationships among variables and among samples. These studies revealed relationships among several variables considered, and were capable to group the samples in two different classes using principal component analysis (PCA.

  1. Electronic Transport Properties of One Dimensional Zno Nanowires Studied Using Maximally-Localized Wannier Functions

    Science.gov (United States)

    Sun, Xu; Gu, Yousong; Wang, Xueqiang

    2012-08-01

    One dimensional ZnO NWs with different diameters and lengths have been investigated using density functional theory (DFT) and Maximally Localized Wannier Functions (MLWFs). It is found that ZnO NWs are direct band gap semiconductors and there exist a turn on voltage for observable current. ZnO nanowires with different diameters and lengths show distinctive turn-on voltage thresholds in I-V characteristics curves. The diameters of ZnO NWs are greatly influent the transport properties of ZnO NWs. For the ZnO NW with large diameter that has more states and higher transmission coefficients leads to narrow band gap and low turn on voltage. In the case of thinner diameters, the length of ZnO NW can effects the electron tunneling and longer supercell lead to higher turn on voltage.

  2. Piezoelectric and semiconducting coupled power generating process of a single ZnO belt/wire. A technology for harvesting electricity from the environment.

    Science.gov (United States)

    Song, Jinhui; Zhou, Jun; Wang, Zhong Lin

    2006-08-01

    This paper presents the experimental observation of piezoelectric generation from a single ZnO wire/belt for illustrating a fundamental process of converting mechanical energy into electricity at nanoscale. By deflecting a wire/belt using a conductive atomic force microscope tip in contact mode, the energy is first created by the deflection force and stored by piezoelectric potential, and later converts into piezoelectric energy. The mechanism of the generator is a result of coupled semiconducting and piezoelectric properties of ZnO. A piezoelectric effect is required to create electric potential of ionic charges from elastic deformation; semiconducting property is necessary to separate and maintain the charges and then release the potential via the rectifying behavior of the Schottky barrier at the metal-ZnO interface, which serves as a switch in the entire process. The good conductivity of ZnO is rather unique because it makes the current flow possible. This paper demonstrates a principle for harvesting energy from the environment. The technology has the potential of converting mechanical movement energy (such as body movement, muscle stretching, blood pressure), vibration energy (such as acoustic/ultrasonic wave), and hydraulic energy (such as flow of body fluid, blood flow, contraction of blood vessels) into electric energy that may be sufficient for self-powering nanodevices and nanosystems in applications such as in situ, real-time, and implantable biosensing, biomedical monitoring, and biodetection.

  3. Vertically integrated nanogenerator based on ZnO nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Aifang; Li, Hongyu; Tang, Haoying; Liu, Tengjiao; Jiang, Peng [National Center for Nanoscience and Technology, No.11, Beiyitiao Zhongguancun, Beijing 100190 (China); Wang, Zhong Lin [National Center for Nanoscience and Technology, No.11, Beiyitiao Zhongguancun, Beijing 100190 (China); School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0245 (United States)

    2011-04-15

    We report a technique to construct a vertically integrated nanogenerator (VI-NG) based on ZnO nanowire (NW) arrays. The VI-NG consists of nine single NGs connected mixed parallel and serial by a layer-by-layer stacking. For the single layer NG, the peak output voltage and current are 0.045 V and 2.5 nA, respectively. The VI-NG produces an output power density of 2.8 nW/cm{sup 2} with a peak output voltage of 0.15 V and output current of 7.2 nA. The vertical integration of the multi-NG provides a feasible technique for effectively converting mechanical energies to electricity from environment. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Exciton diffusion coefficient measurement in ZnO nanowires under electron beam irradiation

    Science.gov (United States)

    Donatini, Fabrice; Pernot, Julien

    2018-03-01

    In semiconductor nanowires (NWs) the exciton diffusion coefficient can be determined using a scanning electron microscope fitted with a cathodoluminescence system. High spatial and temporal resolution cathodoluminescence experiments are needed to measure independently the exciton diffusion length and lifetime in single NWs. However, both diffusion length and lifetime can be affected by the electron beam bombardment during observation and measurement. Thus, in this work the exciton lifetime in a ZnO NW is measured versus the electron beam dose (EBD) via a time-resolved cathodoluminescence experiment with a temporal resolution of 50 ps. The behavior of the measured exciton lifetime is consistent with our recent work on the EBD dependence of the exciton diffusion length in similar NWs investigated under comparable SEM conditions. Combining the two results, the exciton diffusion coefficient in ZnO is determined at room temperature and is found constant over the full span of EBD.

  5. Piezoelectric Nanogenerator Using p-Type ZnO Nanowire Arrays

    KAUST Repository

    Lu, Ming-Pei

    2009-03-11

    Using phosphorus-doped ZnO nanowire (NW) arrays grown on silicon substrate, energy conversion using the p-type ZnO NWs has been demonstrated for the first time. The p-type ZnO NWs produce positive output voltage pulses when scanned by a conductive atomic force microscope (AFM) in contact mode. The output voltage pulse is generated when the tip contacts the stretched side (positive piezoelectric potential side) of the NW. In contrast, the n-type ZnO NW produces negative output voltage when scanned by the AFM tip, and the output voltage pulse is generated when the tip contacts the compressed side (negative potential side) of the NW. In reference to theoretical simulation, these experimentally observed phenomena have been systematically explained based on the mechanism proposed for a nanogenerator. © 2009 American Chemical Society.

  6. Effects of mechanical strain on optical properties of ZnO nanowire

    Directory of Open Access Journals (Sweden)

    Ali Vazinishayan

    2018-02-01

    Full Text Available The main objective of this study is to investigate the influences of mechanical strain on optical properties of ZnO nanowire (NW before and after embedding ZnS nanowire into the ZnO nanowire, respectively. For this work, commercial finite element modeling (FEM software package ABAQUS and three-dimensional (3D finite-difference time-domain (FDTD methods were utilized to analyze the nonlinear mechanical behavior and optical properties of the sample, respectively. Likewise, in this structure a single focused Gaussian beam with wavelength of 633 nm was used as source. The dimensions of ZnO nanowire were defined to be 12280 nm in length and 103.2 nm in diameter with hexagonal cross-section. In order to investigate mechanical properties, three-point bending technique was adopted so that both ends of the model were clamped with mid-span under loading condition and then the physical deformation model was imported into FDTD solutions to study optical properties of ZnO nanowire under mechanical strain. Moreover, it was found that increase in the strain due to the external load induced changes in reflectance, transmittance and absorptance, respectively.

  7. Effects of mechanical strain on optical properties of ZnO nanowire

    Science.gov (United States)

    Vazinishayan, Ali; Lambada, Dasaradha Rao; Yang, Shuming; Zhang, Guofeng; Cheng, Biyao; Woldu, Yonas Tesfaye; Shafique, Shareen; Wang, Yiming; Anastase, Ndahimana

    2018-02-01

    The main objective of this study is to investigate the influences of mechanical strain on optical properties of ZnO nanowire (NW) before and after embedding ZnS nanowire into the ZnO nanowire, respectively. For this work, commercial finite element modeling (FEM) software package ABAQUS and three-dimensional (3D) finite-difference time-domain (FDTD) methods were utilized to analyze the nonlinear mechanical behavior and optical properties of the sample, respectively. Likewise, in this structure a single focused Gaussian beam with wavelength of 633 nm was used as source. The dimensions of ZnO nanowire were defined to be 12280 nm in length and 103.2 nm in diameter with hexagonal cross-section. In order to investigate mechanical properties, three-point bending technique was adopted so that both ends of the model were clamped with mid-span under loading condition and then the physical deformation model was imported into FDTD solutions to study optical properties of ZnO nanowire under mechanical strain. Moreover, it was found that increase in the strain due to the external load induced changes in reflectance, transmittance and absorptance, respectively.

  8. Dopant induced single electron tunneling within the sub-bands of single silicon NW tri-gate junctionless n-MOSFET

    Science.gov (United States)

    Uddin, Wasi; Georgiev, Yordan M.; Maity, Sarmistha; Das, Samaresh

    2017-09-01

    We report 1D electron transport of silicon junctionless tri-gate n-type transistor at 4.2 K. The step like curve observed in the current voltage characteristic suggests 1D transport. Besides the current steps for 1D transport, we found multiple spikes within individual steps, which we relate to inter-band single electron tunneling, mediated by the charged dopants available in the channel region. Clear Coulomb diamonds were observed in the stability diagram of the device. It is shown that a uniformly doped silicon nanowire can provide us the window for the single electron tunnelling. Back-gate versus front-gate color plot, where current is in a color scale, shows a crossover of the increased conduction region. This is a clear indication of the dopant-dopant interaction. It has been shown that back-gate biasing can be used to tune the coupling strength between the dopants.

  9. Halide-oxide carbon vapor transport of ZnO: Novel approach for unseeded growth of single crystals with controllable growth direction

    Science.gov (United States)

    Colibaba, G. V.

    2018-05-01

    The thermodynamic analysis of using HCl + CO gas mixture as a chemical vapor transport agent (TA) for ZnO single crystal growth in closed ampoules, including 11 chemical species, is carried out for wide temperature and loaded TA pressure ranges. The advantages of HCl + CO TA for faster and more stable growth are shown theoretically in comparison with HCl, HCl + H2 and CO. The influence of the growth temperature, of the TA density, of the HCl/CO ratio, and of the undercooling on the ZnO mass transport rate was investigated theoretically and experimentally. The HCl/CO ratios favorable for the growth of m planes and (0001)Zn surface were found. It was shown that HCl + CO TA provides: (i) a rather high growth rate (up to 1.5 mm per day); (ii) a decrease of wall adhesion effect and an etch pit density down to 103 cm-2; (iii) a minimization of growth nucleus quantity down to 1; (iv) stable unseeded growth of the high crystalline quality large single crystals with a controllable preferred growth direction. The characterization by the photoluminescence spectra, the transmission spectra and the electrical properties are analyzed.

  10. Study of the thermal conductivity of ZnO nanowires/PMMA composites

    International Nuclear Information System (INIS)

    Igamberdiev, Kh. T.; Yuldashev, Sh. U.; Cho, H. D.; Kang, T. W.; Rakhimova, Sh. M.; Akhmedov, T. Kh.

    2012-01-01

    From thermal conductivity measurements on ZnO nanowires (NWs)/poly(methyl methacrylate) PMMA composites, the thermal conductivities of the ZnO nanowires were determined. The thermal conductivity of a ZnO NW decreases considerably with decreasing nanowire diameter, and for a ZnO nanowire with a diameter of 250 nm, the thermal conductivity at room temperature is approximately two times lower than that of bulk ZnO at the same temperature. The results of this study show that the thermal conductivity of a ZnO NW is mainly determined by increased phonon-surface boundary scattering. These results could be useful for the design of ZnO-nanowire-based devices.

  11. Growth of Horizonatal ZnO Nanowire Arrays on Any Substrate

    KAUST Repository

    Qin, Yong; Yang, Rusen; Wang, Zhong Lin

    2008-01-01

    A general method is presented for growing laterally aligned and patterned ZnO nanowire (NW) arrays on any substrate as long as it is flat. The orientation control is achieved using the combined effect from ZnO seed layer and the catalytically

  12. Hydrogen interstitial in H-ion implanted ZnO bulk single crystals: Evaluation by elastic recoil detection analysis and electron paramagnetic resonance

    Energy Technology Data Exchange (ETDEWEB)

    Kaida, T.; Kamioka, K.; Nishimura, T. [College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184-8584 (Japan); Kuriyama, K., E-mail: kuri@ionbeam.hosei.ac.jp [College of Engineering and Research Center of Ion Beam Technology, Hosei University, Koganei, Tokyo 184-8584 (Japan); Kushida, K. [Department of Arts and Sciences, Osaka Kyoiku University, Kashiwara, Osaka 582-8582 (Japan); Kinomura, A. [National Institute of Advanced Industrial Science and Technology, Tsukuba, Ibaraki 305-8568 (Japan)

    2015-12-15

    The origins of low resistivity in H ion-implanted ZnO bulk single crystals are evaluated by elastic recoil detection analysis (ERDA), electron paramagnetic resonance (EPR), and Van der Pauw methods. The H-ion implantation (peak concentration: 5.0 × 10{sup 15} cm{sup −2}) into ZnO is performed using a 500 keV implanter. The maximum of the concentration of the implanted H estimated by a TRIM simulation is at 3600 nm in depth. The resistivity decreases from ∼10{sup 3} Ω cm for un implanted ZnO to 6.5 Ω cm for as-implanted, 2.3 × 10{sup −1} Ω cm for 200 °C annealed, and 3.2 × 10{sup −1} Ω cm for 400 °C annealed samples. The ERDA measurements can evaluate the concentration of hydrogens which move to the vicinity of the surface (surface to 300 nm or 100 nm) because of the diffusion by the annealing at 200 °C and 400 °C. The hydrogen concentration near the surface estimated using the 2.0 MeV helium beam is ∼3.8 × 10{sup 13} cm{sup −2} for annealed samples. From EPR measurements, the oxygen vacancy of +charge state (V{sub o}{sup +}) is observed in as-implanted samples. The V{sub o}{sup +} related signal (g = 1.96) observed under no illumination disappears after successive illumination with a red LED and appears again with a blue light illumination. The activation energy of as-implanted, 200 °C annealed, and 400 °C annealed samples estimated from the temperature dependence of carrier concentration lies between 29 meV and 23 meV, suggesting the existence of H interstitial as a shallow donor level.

  13. Low temperature preparation of Ag-doped ZnO nanowire arrays for sensor and light-emitting diode applications

    Science.gov (United States)

    Lupan, O.; Viana, B.; Cretu, V.; Postica, V.; Adelung, R.; Pauporté, T.

    2016-02-01

    Transition metal doped-oxide semiconductor nanostructures are important to achieve enhanced and new properties for advanced applications. We describe the low temperature preparation of ZnO:Ag nanowire/nanorod (NW/NR) arrays by electrodeposition at 90 °C. The NWs have been characterized by SEM, EDX, transmittance and photoluminescence (PL) measurements. The integration of Ag in the crystal is shown. Single nanowire/nanorod of ZnO:Ag was integrated in a nanosensor structure leading to new and enhanced properties. The ultraviolet (UV) response of the nanosensor was investigated at room temperature. Experimental results indicate that ZnO:Ag (0.75 μM) nanosensor possesses faster response/recovery time and better response to UV light than those reported in literature. The sensor structure has been also shown to give a fast response for the hydrogen detection with improved performances compared to pristine ZnO NWs. ZnO:Ag nanowire/nanorod arrays electrochemically grown on p-type GaN single crystal layer is also shown to act as light emitter in LED structures. The emission wavelength is red-shifted compared to pristine ZnO NW array. At low Ag concentration a single UV-blue emission is found whereas at higher concentration of dopant the emission is broadened and extends up to the red wavelength range. Our study indicates that high quality ZnO:Ag NW/NR prepared at low temperature by electrodeposition can serve as building nanomaterials for new sensors and light emitting diodes (LEDs) structures with low-power consumption.

  14. Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Melikhova, O.; Čížek, J.; Lukáč, F.; Vlček, M.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.

    2013-01-01

    Highlights: ► Thin ZnO films and high quality ZnO crystal were electrochemically doped with hydrogen. ► Hydrogen absorbed in ZnO causes plastic deformation both in ZnO crystal and thin films. ► In ZnO crystal a sub-surface region with very high density of defects was formed. ► Moreover, plastic deformation causes specific surface modification of ZnO crystal. ► In ZnO films hydrogen-induced plastic deformation introduced defects in the whole film. -- Abstract: ZnO films with thickness of ∼80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects than the film deposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnO crystal were subsequently loaded with hydrogen by electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO

  15. Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

    Energy Technology Data Exchange (ETDEWEB)

    Melikhova, O., E-mail: oksivmel@yahoo.com [Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, CZ-180 00 Praha 8 (Czech Republic); Čížek, J.; Lukáč, F.; Vlček, M. [Charles University in Prague, Faculty of Mathematics and Physics, V Holesovickach 2, CZ-180 00 Praha 8 (Czech Republic); Novotný, M.; Bulíř, J.; Lančok, J. [Institute of Physics, Academy of Sciences of the Czech Republic, Na Slovance 2, 182 21 Prague (Czech Republic); Anwand, W.; Brauer, G. [Institut für Strahlenphysik, Helmholtz-Zentrum Dresden-Rossendorf, PO Box 510 119, D-01314 Dresden (Germany); Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P. [National Centre for Plasma Science and Technology, School of Physical Sciences, Glasnevin, Dublin 9 (Ireland)

    2013-12-15

    Highlights: ► Thin ZnO films and high quality ZnO crystal were electrochemically doped with hydrogen. ► Hydrogen absorbed in ZnO causes plastic deformation both in ZnO crystal and thin films. ► In ZnO crystal a sub-surface region with very high density of defects was formed. ► Moreover, plastic deformation causes specific surface modification of ZnO crystal. ► In ZnO films hydrogen-induced plastic deformation introduced defects in the whole film. -- Abstract: ZnO films with thickness of ∼80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects than the film deposited on amorphous FS substrate most probably due to a dense network of misfit dislocations. The ZnO films and the reference ZnO crystal were subsequently loaded with hydrogen by electrochemical cathodic charging. SPIS characterizations revealed that absorbed hydrogen introduces new defects into ZnO.

  16. Spatially Correlated, Single Nanomaterial-Level Structural and Optical Profiling of Cu-Doped ZnO Nanorods Synthesized via Multifunctional Silicides

    Directory of Open Access Journals (Sweden)

    Johnson Truong

    2018-04-01

    Full Text Available We demonstrate a straightforward and effective method to synthesize vertically oriented, Cu-doped ZnO nanorods (NRs using a novel multipurpose platform of copper silicide nanoblocks (Cu3Si NBs preformed laterally in well-defined directions on Si. The use of the surface-organized Cu3Si NBs for ZnO NR growth successfully results in densely assembled Cu-doped ZnO NRs on each NB platform, whose overall structures resemble thick bristles on a brush head. We show that Cu3Si NBs can uniquely serve as a catalyst for ZnO NRs, a local dopant source of Cu, and a prepatterned guide to aid the local assembly of the NRs on the growth substrate. We also ascertain the crystalline structures, optical properties, and spectroscopic signatures of the Cu-doped ZnO NRs produced on the NBs, both at each module of NRs/NB and at their ensemble level. Subsequently, we determine their augmented properties relative to the pristine form of undoped ZnO NRs and the source material of Cu3Si NBs. We provide spatially correlated structural and optical data for individual modules of Cu-doped ZnO NRs assembled on a Cu3Si NB by resolving them along the different positions on the NB. Ensemble-averaged versus individual behaviors of Cu-doped ZnO NRs on Cu3Si NBs are then compared. We further discuss the potential impact of such ZnO-derived NRs on their relatively unexplored biological and biomedical applications. Our efforts will be particularly useful when exploiting each integrated module of self-aligned, Cu-doped ZnO NRs on a NB as a discretely addressable, active element in solid-state sensors and miniaturized luminescent bioprobes.

  17. Non-vacuum, single-step conductive transparent ZnO patterning by ultra-short pulsed laser annealing of solution-deposited nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Daeho; Pan, Heng; Kim, Eunpa; Grigoropoulos, Costas P. [University of California, Department of Mechanical Engineering, Berkeley, CA (United States); Ko, Seung Hwan [Korea Advanced Institute of Science and Technology (KAIST), Department of Mechanical Engineering, Daejeon (Korea, Republic of); Park, Hee K. [AppliFlex LLC, Sunnyvale, CA (United States)

    2012-04-15

    A solution-processable, high-concentration transparent ZnO nanoparticle (NP) solution was successfully synthesized in a new process. A highly transparent ZnO thin film was fabricated by spin coating without vacuum deposition. Subsequent ultra-short-pulsed laser annealing at room temperature was performed to change the film properties without using a blanket high temperature heating process. Although the as-deposited NP thin film was not electrically conductive, laser annealing imparted a large conductivity increase and furthermore enabled selective annealing to write conductive patterns directly on the NP thin film without a photolithographic process. Conductivity enhancement could be obtained by altering the laser annealing parameters. Parametric studies including the sheet resistance and optical transmittance of the annealed ZnO NP thin film were conducted for various laser powers, scanning speeds and background gas conditions. The lowest resistivity from laser-annealed ZnO thin film was about 4.75 x 10{sup -2} {omega} cm, exhibiting a factor of 10{sup 5} higher conductivity than the previously reported furnace-annealed ZnO NP film and is even comparable to that of vacuum-deposited, impurity-doped ZnO films within a factor of 10. The process developed in this work was applied to the fabrication of a thin film transistor (TFT) device that showed enhanced performance compared with furnace-annealed devices. A ZnO TFT performance test revealed that by just changing the laser parameters, the solution-deposited ZnO thin film can also perform as a semiconductor, demonstrating that laser annealing offers tunability of ZnO thin film properties for both transparent conductors and semiconductors. (orig.)

  18. Quenching of the surface-state-related photoluminescence in Ni-coated ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Tang Yang [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Graduate School of the Chinese Academy of Sciences (China); Zhao Dongxu, E-mail: dxzhao2000@yahoo.com.c [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China); Zhang Jiying; Shen Dezhen [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic Zone, Changchun 130033 (China)

    2010-11-01

    Nickel-coated ZnO nanowires (NWs) were fabricated by electrodepositing Ni particles on ZnO NW arrays. The morphological, magnetic, and photoluminescent properties of the Ni-coated ZnO NWs were investigated. The Ni particles were deposited on the ZnO NWs' surface along its length to form a Ni/ZnO shell-core structure. The Ni-coated ZnO NWs exhibited more isotropic characteristic than the electrodeposited Ni films owing to the isotropic sphere structure of the Ni particles. A strong ultraviolet emission can be obtained from the Ni-coated ZnO NWs, while the green emission related to surface states was quenched by the passivated layer.

  19. Quenching of the surface-state-related photoluminescence in Ni-coated ZnO nanowires

    International Nuclear Information System (INIS)

    Tang Yang; Zhao Dongxu; Zhang Jiying; Shen Dezhen

    2010-01-01

    Nickel-coated ZnO nanowires (NWs) were fabricated by electrodepositing Ni particles on ZnO NW arrays. The morphological, magnetic, and photoluminescent properties of the Ni-coated ZnO NWs were investigated. The Ni particles were deposited on the ZnO NWs' surface along its length to form a Ni/ZnO shell-core structure. The Ni-coated ZnO NWs exhibited more isotropic characteristic than the electrodeposited Ni films owing to the isotropic sphere structure of the Ni particles. A strong ultraviolet emission can be obtained from the Ni-coated ZnO NWs, while the green emission related to surface states was quenched by the passivated layer.

  20. Hydrogen absorption in thin ZnO films prepared by pulsed laser deposition

    OpenAIRE

    Meilkhova, O.; Čížek, J.; Lukáč,, F.; Vlček, M.; Novotný, M.; Bulíř, J.; Lančok, J.; Anwand, W.; Brauer, G.; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.

    2013-01-01

    ZnO films with thickness of ~80 nm were grown by pulsed laser deposition (PLD) on MgO (1 0 0) single crystal and amorphous fused silica (FS) substrates. Structural studies of ZnO films and a high quality reference ZnO single crystal were performed by slow positron implantation spectroscopy (SPIS). It was found that ZnO films exhibit significantly higher density of defects than the reference ZnO crystal. Moreover, the ZnO film deposited on MgO substrate exhibits higher concentration of defects...

  1. Synthesis of highly conductive thin-walled Al-doped ZnO single-crystal microtubes by a solid state method

    Science.gov (United States)

    Hu, Shuopeng; Wang, Yue; Wang, Qiang; Xing, Cheng; Yan, Yinzhou; Jiang, Yijian

    2018-06-01

    ZnO has attracted considerable attention in fundamental studies and practical applications for the past decade due to its outstanding performance in gas sensing, photocatalytic degradation, light harvesting, UV-light emitting/lasing, etc. The large-sized thin-walled ZnO (TW-ZnO) microtube with stable and rich VZn-related acceptors grown by optical vapor supersaturated precipitation (OVSP) is a novel multifunctional optoelectronic material. Unfortunately, the OVSP cannot achieve doping due to the vapor growth process. To obtain doped TW-ZnO microtubes, a solid state method is introduced in this work to achieve thin-walled Al-doping ZnO (TW-ZnO:Al) microtubes with high electrical conductivity. The morphology and microstructures of ZnO:Al microtubes are similar to undoped ones. The Al3+ ions are confirmed to substitute Zn2+ sites and Zn(0/-1) vacancies in the lattice of ZnO by EDS, XRD, Raman and temperature-dependent photoluminescence analyses. The Al dopant acting as a donor level offers massive free electrons to increase the carrier concentrations. The resistivity of the ZnO:Al microtube is reduced down to ∼10-3 Ω·cm, which is one order of magnitude lower than that of the undoped microtube. The present work provides a simple way to achieve doped ZnO tubular components for potential device applications in optoelectronics.

  2. Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires

    Science.gov (United States)

    Demes, Thomas; Ternon, Céline; Morisot, Fanny; Riassetto, David; Legallais, Maxime; Roussel, Hervé; Langlet, Michel

    2017-07-01

    Hydrothermal synthesis of ZnO nanowires (NWs) with tailored dimensions, notably high aspect ratios (AR) and small diameters, is a major concern for a wide range of applications and still represents a challenging and recurring issue. In this work, an additive-free and reproducible hydrothermal procedure has been developed to grow ultra-thin and high AR ZnO NWs on sol-gel deposited ZnO seed layers. Controlling the substrate temperature and using a low reagent concentration (1 mM) has been found to be essential for obtaining such NWs. We show that the NW diameter remains constant at about 20-25 nm with growth time contrary to the NW length that can be selectively increased leading to NWs with ARs up to 400. On the basis of investigated experimental conditions along with thermodynamic and kinetic considerations, a ZnO NW growth mechanism has been developed which involves the formation and growth of nuclei followed by NW growth when the nuclei reach a critical size of about 20-25 nm. The low reagent concentration inhibits NW lateral growth leading to ultra-thin and high AR NWs. These NWs have been assembled into electrically conductive ZnO nanowire networks, which opens attractive perspectives toward the development of highly sensitive low-cost gas- or bio-sensors.

  3. The influence of defect drift in external electric field on green luminescence of ZnO single crystals

    International Nuclear Information System (INIS)

    Korsunska, N.O.; Borkovska, L.V.; Bulakh, B.M.; Khomenkova, L.Yu.; Kushnirenko, V.I.; Markevich, I.V.

    2003-01-01

    In nominally undoped Zn O single crystals, the influence of electric field on photoluminescence in visible wavelength range was investigated. A well-known broad unstructured band consisting of green and orange ones was observed. It was found that the action of direct electric field of about 100 V/cm at 600-700 deg. C resulted in the increase of green band intensity near the cathode and its decrease near the anode, while orange band intensity was not influenced by this treatment. The redistribution of green band intensity along the sample under electric field is accounted for by drift of zinc interstitials from the anode to the cathode. It is supposed that emitting centres responsible for green luminescence are complex defects including zinc interstitials

  4. Admittance spectroscopy of spray-pyrolyzed ZnO film

    International Nuclear Information System (INIS)

    Kavasoglu, Nese; Kavasoglu, A. Sertap

    2008-01-01

    A ZnO film was deposited using the spray pyrolysis method. The admittance spectroscopy method was used to establish the contributions to electrical behavior from grains, grain boundaries, and electrodes of film. Proper equivalent electrical circuit of a ZnO film composed of a single parallel resistor, capacitor, and inductor network connected with a series resistance was proposed. Moreover, we displayed metal-semiconductor transition (MST) in the ZnO film via admittance spectroscopy

  5. Growth of Vertically Aligned ZnO Nanowire Arrays Using Bilayered Metal Catalysts

    Science.gov (United States)

    2012-01-01

    12] J. P. Liu, C. X. Guo, C. M. Li et al., “Carbon-decorated ZnO nanowire array: a novel platform for direct electrochemistry of enzymes and...cited. Vertically aligned, high-density ZnO nanowires (NWs) were grown for the first time on c-plane sapphire using binary alloys of Ni/Au or Cu/Au as...deleterious to the ZnO NW array growth. Significant improvement of the Au adhesion on the substrate was noted, opening the potential for direct

  6. Analysis of surface states in ZnO nanowire field effect transistors

    International Nuclear Information System (INIS)

    Shao, Ye; Yoon, Jongwon; Kim, Hyeongnam; Lee, Takhee; Lu, Wu

    2014-01-01

    Highlights: • The electron transport in ZnO nanowire FETs is space charged limited below a trap temperature. • Metallic contacts to ZnO nanowires exhibit non-linear behavior with a Schottky barrier height of ∼0.35 eV. • The surface state density is in the range of 1.04 × 10 10 –1.24 × 10 10 /cm 2 . • The trap activation energy is ∼0.26 eV. - Abstract: Nanowires (NWs) have attracted considerable interests for scaled electronic and optoelectronic device applications. However, NW based semiconductor devices normally suffer from surface states due to the existence of dangling bonds or surface reconstruction. Because of their large surface-to-volume ratio, surface states in NWs can easily affect the metallic contacts to NWs and electron transport in NW. Here, we present ZnO NW surface analysis by performing current–voltage characterization on ZnO NW Schottky barrier field effect transistors with different metal contacts (Ti, Al, Au) at both room temperature and cryogenic temperature. Our results show that three metal contacts are all Schottky contacts to ZnO NWs due to surface states. Our further study reveals: (a) the surface states related Schottky barrier height (SBH) can be extracted from a back to back Schottky diodes model and the SBH values are in the range of 0.34–0.37 eV for three metal contacts; (b) the trap activation energy determined from the Arrhenius plots of different Schottky metal contacts is in the range of 0.23–0.29 eV, which is oxygen vacancies related; and (c) based on the space-charge-limited model, the surface state density of ZnO NW is in the range of 1.04 × 10 10 –1.24 × 10 10 /cm 2

  7. Catalyst free growth of ZnO nanowires on graphene and graphene oxide and its enhanced photoluminescence and photoresponse

    International Nuclear Information System (INIS)

    Biroju, Ravi K; Giri, P K; Tilak, Nikhil; Rajender, Gone; Dhara, S

    2015-01-01

    We demonstrate the graphene assisted catalyst free growth of ZnO nanowires (NWs) on chemical vapor deposited (CVD) and chemically processed graphene buffer layers at a relatively low growth temperature (580 °C) in the presence and absence of ZnO seed layers. In the case of CVD graphene covered with rapid thermal annealed ZnO buffer layer, the growth of vertically aligned ZnO NWs takes place, while the direct growth on CVD graphene, chemically derived graphene (graphene oxide and graphene quantum dots) without ZnO seed layer resulted in randomly oriented sparse ZnO NWs. Growth mechanism was studied from high resolution transmission electron microscopy and Raman spectroscopy of the hybrid structure. Further, we demonstrate strong UV, visible photoluminescence (PL) and enhanced photoconductivity (PC) from the CVD graphene–ZnO NWs hybrids as compared to the ZnO NWs grown without the graphene buffer layer. The evolution of crystalinity in ZnO NWs grown with ZnO seed layer and graphene buffer layer is correlated with the Gaussian line shape of UV and visible PL. This is further supported by the strong Raman mode at 438 cm −1 significant for the wurtzite phase of the ZnO NWs grown on different graphene substrates. The effect of the thickness of ZnO seed layers and the role of graphene buffer layers on the aligned growth of ZnO NWs and its enhanced PC are investigated systematically. Our results demonstrate the catalyst free growth and superior performance of graphene–ZnO NW hybrid UV photodetectors as compared to the bare ZnO NW based photodetectors. (paper)

  8. Strain-free GaN thick films grown on single crystalline ZnO buffer layer with in situ lift-off technique

    International Nuclear Information System (INIS)

    Lee, S. W.; Minegishi, T.; Lee, W. H.; Goto, H.; Lee, H. J.; Lee, S. H.; Lee, Hyo-Jong; Ha, J. S.; Goto, T.; Hanada, T.; Cho, M. W.; Yao, T.

    2007-01-01

    Strain-free freestanding GaN layers were prepared by in situ lift-off process using a ZnO buffer as a sacrificing layer. Thin Zn-polar ZnO layers were deposited on c-plane sapphire substrates, which was followed by the growth of Ga-polar GaN layers both by molecular beam epitaxy (MBE). The MBE-grown GaN layer acted as a protecting layer against decomposition of the ZnO layer and as a seeding layer for GaN growth. The ZnO layer was completely in situ etched off during growth of thick GaN layers at low temperature by hydride vapor phase epitaxy. Hence freestanding GaN layers were obtained for the consecutive growth of high-temperature GaN thick layers. The lattice constants of freestanding GaN agree with those of strain-free GaN bulk. Extensive microphotoluminescence study indicates that strain-free states extend throughout the high-temperature grown GaN layers

  9. Conducting properties of nearly depleted ZnO nanowire UV sensors fabricated by dielectrophoresis

    International Nuclear Information System (INIS)

    García Núñez, C; García Marín, A; Piqueras, J; Pau, J L; Nanterne, P; Kung, P

    2013-01-01

    ZnO nanowires (NWs) with different radii (r NW ) have been aligned between pre-patterned electrodes using dielectrophoresis (DEP) for the fabrication of high gain UV sensors. The DEP conditions (voltage amplitude and frequency) and electrode material, geometry and size were optimized to enhance the efficiency during the DEP process. To understand the alignment mechanism of the ZnO NWs, the dielectrophoretic force (F DEP ) was analyzed as a function of the DEP conditions and NW dimensions. These studies showed that the DEP alignment process tends to trap NWs with a smaller radius. The effects of NW size on device performance were analyzed by means of I–V measurements in darkness and under illumination (200 nm NW decreases due to the reduction of the conduction volume, until saturation is reached for r NW 8 A W −1 (measured at 5 V and λ NW , presenting a clear blue-shift for NWs with a lower radius (r NW 2 reduces the dynamic range of the photoresponse due to a strong increase of the dark current. (paper)

  10. Enhanced Response Speed of ZnO Nanowire Photodetector by Coating with Photoresist

    Directory of Open Access Journals (Sweden)

    Xing Yang

    2016-01-01

    Full Text Available Spin-coating photoresist film on ZnO nanowire (NW was introduced into the fabrication procedure to improve photoresponse and recovery speed of a ZnO NW ultraviolet photoelectric detector. A ZnO NW was first assembled on prefabricated electrodes by dielectrophoresis. Then, photoresist was spin-coated on the nanowire. Finally, a metal layer was electrodeposited on the nanowire-electrode contacts. The response properties and I-V characteristics of ZnO NW photodetector were investigated by measuring the electrical current under different conditions. Measurement results demonstrated that the detector has an enhanced photoresponse and recovery speed after coating the nanowire with photoresist. The photoresponse and recovery characteristics of detectors with and without spin-coating were compared to demonstrate the effects of photoresist and the enhancement of response and recovery speed of the photodetector is ascribed to the reduced surface absorbed oxygen molecules and binding effect on the residual oxygen molecules after photoresist spin-coating. The results demonstrated that surface coating may be an effective and simple way to improve the response speed of the photoelectric device.

  11. Power-dependent photocatalytic activity of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Chun, So Yeon; Han, Noh Soo; Jeong, Seong Hyun; Park, Seung Min; Song, Jae Kyu [Dept. of Chemistry, Kyung Hee University, Seoul (Korea, Republic of); Moon, Cheol Joo; Choi, Myong Yong [Dept. of Chemistry (BK21) and Research Institute of Natural Science, Gyeongsang NationalUniversity, Jinju (Korea, Republic of)

    2017-03-15

    the power-dependent photocatalytic activity of ZnO was examined for the photoreduction processes of Rh101 and AN in the presence of hole scavengers, where the fluorescence spectra were measured as a function of irradiation time and excitation intensity. The concentration of the reactants decreased, while the concentration of the products increased accordingly, which indicated the single-electron reduction process by electrons supplied from the conduction band of ZnO. Despite the single-electron process, the efficiency of the photoreaction depended nonlinearly on the excitation intensity, which was explained by the saturation of defect states in ZnO. The enhanced ratio of available electrons in ZnO led to a superlinear increase in the photoreduction efficiency, while the single-electron process linearly reflected the electrons available in ZnO.

  12. Mechanisms involved in the hydrothermal growth of ultra-thin and high aspect ratio ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Demes, Thomas [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Ternon, Céline, E-mail: celine.ternon@grenoble-inp.fr [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Univ. Grenoble Alpes, CNRS, LTM, F-38000 Grenoble (France); Morisot, Fanny [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Univ. Grenoble Alpes, CNRS, Grenoble-INP" 2, IMEP-LaHC, F-38000 Grenoble (France); Riassetto, David [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Legallais, Maxime [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France); Univ. Grenoble Alpes, CNRS, Grenoble-INP" 2, IMEP-LaHC, F-38000 Grenoble (France); Roussel, Hervé; Langlet, Michel [Univ. Grenoble Alpes, CNRS, Grenoble-INP, LMGP, F-38000 Grenoble (France)

    2017-07-15

    Highlights: • ZnO nanowires are grown on sol-gel ZnO seed layers by hydrothermal synthesis. • Ultra-thin and high aspect ratio nanowires are obtained without using additives. • Nanowire diameter is 20–25 nm regardless of growth time and seed morphology. • A nanowire growth model is developed on the basis of thermodynamic considerations. • The nanowires are intended for integration into electrically conductive nanonets. - Abstract: Hydrothermal synthesis of ZnO nanowires (NWs) with tailored dimensions, notably high aspect ratios (AR) and small diameters, is a major concern for a wide range of applications and still represents a challenging and recurring issue. In this work, an additive-free and reproducible hydrothermal procedure has been developed to grow ultra-thin and high AR ZnO NWs on sol-gel deposited ZnO seed layers. Controlling the substrate temperature and using a low reagent concentration (1 mM) has been found to be essential for obtaining such NWs. We show that the NW diameter remains constant at about 20–25 nm with growth time contrary to the NW length that can be selectively increased leading to NWs with ARs up to 400. On the basis of investigated experimental conditions along with thermodynamic and kinetic considerations, a ZnO NW growth mechanism has been developed which involves the formation and growth of nuclei followed by NW growth when the nuclei reach a critical size of about 20–25 nm. The low reagent concentration inhibits NW lateral growth leading to ultra-thin and high AR NWs. These NWs have been assembled into electrically conductive ZnO nanowire networks, which opens attractive perspectives toward the development of highly sensitive low-cost gas- or bio-sensors.

  13. Digital selective growth of a ZnO nanowire array by large scale laser decomposition of zinc acetate.

    Science.gov (United States)

    Hong, Sukjoon; Yeo, Junyeob; Manorotkul, Wanit; Kang, Hyun Wook; Lee, Jinhwan; Han, Seungyong; Rho, Yoonsoo; Suh, Young Duk; Sung, Hyung Jin; Ko, Seung Hwan

    2013-05-07

    We develop a digital direct writing method for ZnO NW micro-patterned growth on a large scale by selective laser decomposition of zinc acetate. For ZnO NW growth, by replacing the bulk heating with the scanning focused laser as a fully digital local heat source, zinc acetate crystallites can be selectively activated as a ZnO seed pattern to grow ZnO nanowires locally on a larger area. Together with the selective laser sintering process of metal nanoparticles, more than 10,000 UV sensors have been demonstrated on a 4 cm × 4 cm glass substrate to develop all-solution processible, all-laser mask-less digital fabrication of electronic devices including active layer and metal electrodes without any conventional vacuum deposition, photolithographic process, premade mask, high temperature and vacuum environment.

  14. Growth and Transfer of Monolithic Horizontal ZnO Nanowire Superstructures onto Flexible Substrates

    KAUST Repository

    Xu, Sheng

    2010-04-28

    A method of fabricating horizontally aligned ZnO nanowire (NW) arrays with full control over the width and length is demonstrated. A cross-sectional view of the NWs by transmission electron microscopy shows a "mushroom-like" structure. Novel monolithic multisegment superstructures are fabricated by making use of the lateral overgrowth. Ultralong horizontal ZnO NWs of an aspect ratio on the order often thousand are also demonstrated. These horizontal NWs are lifted off and transferred onto a flexible polymer substrate, which may have many great applications in horizontal ZnO NW-based nanosensor arrays, light-emitting diodes, optical gratings, integrated circuit interconnects, and high-output-power alternating-current nanogenerators. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA.

  15. Better Buildings NW Ohio

    Energy Technology Data Exchange (ETDEWEB)

    Moyer, Kevin [Toledo-Lucas County Port Authority, Toledo, OH (United States)

    2015-03-04

    Districts or ESIDs and what is nationally known as Property Assessed Clean Energy or PACE districts and PACE financing. The project methodology followed the identify, develop, implement, monitor and measure format. These districts began in Toledo and adjoining areas and are expanding to TLCPA’s 28 county financing agency geographic footprint. What began as the Toledo Ohio Advanced Energy Improvement Corporation is now doing business as the Northwest Ohio Advanced Energy Improvement District recognizing it expansion into creating and financing other districts in NW Ohio. The program has been sought out as an advisor by major communities and states in the process of developing similar legislation and programs and has become one of the largest most successful PACE energy improvement and financing districts in the US. The program and the energy district focused on transforming energy use, delivery, conservation and renewable energy as “options of first choice”. The significant energy savings paid for many of the improvements and created a financially viable program well beyond the grant period. The program has become a model within the State of Ohio and Nationally on how to implement and finance projects in broad energy districts including how to evolve and integrate several financing methodologies. It is a unique utilization of revolving loan funds and energy bond pooling with revenue backing primarily from energy improvement special assessments on commercial properties along with some power purchase agreement (PPA) and loan agreement revenue. The program has also incorporated Qualified Energy Conservation Bonds, State of Ohio Energy Loans (SEP), utility rebates, solar and renewable energy certificates, renewable tax incentives and grants, and owner funded equity as additional program leverage and funding. Other keys to this success have been a continual simplification and refinement of the application and documentation process to make funding available easily and

  16. Solvothermal Synthesis of One-Dimensional Transition Metal Doped ZnO Nanocrystals and Their Applications in Smart Window Devices

    OpenAIRE

    Šutka, A; Timusk, M; Kisand, V; Saal, K; Joost, U; Lõhmus, R

    2015-01-01

    Oxide semiconductor nanowire (NW) suspension based devices have been attracted growing interest in smart window applications due to their great controllability of light transmittance, simplicity and long term stability. Recently, we demonstrated smart window device using the suspension of electrospun TiO2 or solvothermally synthesized ZnO NWs in viscous polydimethylsiloxane (PDMS) matrix. The operating principle of the oxide semiconductor NW and PDMS device is based on the alterable orientati...

  17. Anodized ZnO nanostructures for photoelectrochemical water splitting

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Mao-Chia [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Wang, TsingHai [Department of Biomedical Engineering and Environment Sciences, National Tsing Hua University, Hsinchu 30013, Taiwan (China); Wu, Bin-Jui [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Lin, Jing-Chie, E-mail: jclin4046@gmail.com [Institute of Materials Science and Engineering, National Central University, Taoyuan 32001, Taiwan (China); Wu, Ching-Chen [Green Energy and Environment Research Laboratories, Industrial Technology Research Institute, Hsinchu 310, Taiwan (China)

    2016-01-01

    Highlights: • ZnO nanostructures were synthesized by electrochemical anodic process. • The parameter of ZnO nanostructure was anodic potential. • The model of growth of ZnO nanostructure was investigated. - Abstract: Zinc oxide (ZnO) nanostructures were fabricated on the polished zinc foil by anodic deposition in an alkaline solution containing 1.0 M NaOH and 0.25 M Zn(NO{sub 3}){sub 2}. Potentiostatic anodization was conducted at two potentials (−0.7 V in the passive region and −1.0 V in the active region vs. SCE) which are higher than the open circuit potential (−1.03 V vs. SCE) and as-obtained ZnO nanostrcutures were investigated focusing on their structural, optical, electrical and photoelectrochemical (PEC) characteristics. All samples were confirmed ZnO by X-ray photoelectron spectroscopy and Raman spectra. Observations in the SEM images clearly showed that ZnO nanostructures prepared at −0.7 V vs. SCE were composed of nanowires at while those obtained at −1.0 V vs. SCE possessed nanosheets morphology. Result from transmission electron microscope and X-ray diffraction patterns suggested that the ZnO nanowires belonged to single crystalline with a preferred orientation of (0 0 2) whereas the ZnO nanosheets were polycrystalline. Following PEC experiments indicated that ZnO nanowires had higher photocurrent density of 0.32 mA/cm{sup 2} at 0.5 V vs. SCE under 100 mW/cm{sup 2} illumination. This value was about 1.9 times higher than that of ZnO nanosheets. Observed higher photocurrent was likely due to the single crystalline, preferred (0 0 2) orientation, higher carrier concentration and lower charge transfer resistance.

  18. Effect of cobalt doping on the mechanical properties of ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Vahtrus, Mikk; Šutka, Andris [Institute of Physics, University of Tartu, W. Ostwaldi 1, 50412 Tartu (Estonia); Polyakov, Boris [Institute of Solid State Physics, University of Latvia, Kengaraga 8, LV-1063 Riga (Latvia); Oras, Sven; Antsov, Mikk [Institute of Physics, University of Tartu, W. Ostwaldi 1, 50412 Tartu (Estonia); Doebelin, Nicola [RMS Foundation, Bischmattstrasse 12, Bettlach 2544 (Switzerland); Institute of Geological Sciences, University of Bern, Baltzerstrasse 1–3, Bern 3012 (Switzerland); Lõhmus, Rünno; Nõmmiste, Ergo [Institute of Physics, University of Tartu, W. Ostwaldi 1, 50412 Tartu (Estonia); Vlassov, Sergei, E-mail: vlassovs@ut.ee [Institute of Physics, University of Tartu, W. Ostwaldi 1, 50412 Tartu (Estonia)

    2016-11-15

    In this work, we investigate the influence of doping on the mechanical properties of ZnO nanowires (NWs) by comparing the mechanical properties of pure and Co-doped ZnO NWs grown in similar conditions and having the same crystallographic orientation [0001]. The mechanical characterization included three-point bending tests made with atomic force microscopy and cantilever beam bending tests performed inside scanning electron microscopy. It was found that the Young's modulus of ZnO NWs containing 5% of Co was approximately a third lower than that of the pure ZnO NWs. Bending strength values were comparable for both materials and in both cases were close to theoretical strength indicating high quality of NWs. Dependence of mechanical properties on NW diameter was found for both doped and undoped ZnO NWs. - Highlights: •Effect of Co doping on the mechanical properties of ZnO nanowires is studied. •Co substitutes Zn atoms in ZnO crystal lattice. •Co addition affects crystal lattice parameters. •Co addition results in significantly decreased Young's modulus of ZnO. •Bending strength for doped and undoped wires is close to the theoretical strength.

  19. Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

    OpenAIRE

    Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

    2016-01-01

    We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-?m line width, 9-?m pitch, and 6-?m height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed...

  20. The method of local increments for the calculation of adsorption energies of atoms and small molecules on solid surfaces. Part I. A single Cu atom on the polar surfaces of ZnO.

    Science.gov (United States)

    Schmitt, Ilka; Fink, Karin; Staemmler, Volker

    2009-12-21

    The method of local increments is used in connection with the supermolecule approach and an embedded cluster model to calculate the adsorption energy of single Cu atoms at different adsorption sites at the polar surfaces of ZnO. Hartree-Fock calculations for the full system, adsorbed atom and solid surface, and for the fragments are the first step in this approach. In the present study, restricted open-shell Hartree-Fock (ROHF) calculations are performed since the Cu atom possesses a singly-occupied 4s orbital. The occupied Hartree-Fock orbitals are then localized by means of the Foster-Boys localization procedure. The correlation energies are expanded into a series of many-body increments which are evaluated separately and independently. In this way, the very time-consuming treatment of large systems is replaced with a series of much faster calculations for small subunits. In the present application, these subunits consist of the orbitals localized at the different atoms. Three adsorption situations with rather different bonding characteristics have been studied: a Cu atom atop a threefold-coordinated O atom of an embedded Zn(4)O(4) cluster, a Cu atom in an O vacancy site at the O-terminated ZnO(000-1) surface, and a Cu atom in a Zn vacancy site at the Zn-terminated ZnO(0001) surface. The following properties are analyzed in detail: convergence of the many-body expansion, contributions of the different n-body increments to the adsorption energy, treatment of the singly-occupied orbital as "localized" or "delocalized". Big savings in computer time can be achieved by this approach, particularly if only the localized orbitals in the individual increment under consideration are described by a large correlation adapted basis set, while all other orbitals are treated by a medium-size Hartree-Fock-type basis set. In this way, the method of local increments is a powerful alternative to the widely used methods like DFT or RI-MP2.

  1. Effects of Chromium Dopant on Ultraviolet Photoresponsivity of ZnO Nanorods

    Science.gov (United States)

    Mokhtari, S.; Safa, S.; Khayatian, A.; Azimirad, R.

    2017-07-01

    Structural and optical properties of bare ZnO nanorods, ZnO-encapsulated ZnO nanorods, and Cr-doped ZnO-encapsulated ZnO nanorods have been investigated. Encapsulated ZnO nanorods were grown using a simple two-stage method in which ZnO nanorods were first grown on a glass substrate directly from a hydrothermal bath, then encapsulated with a thin layer of Cr-doped ZnO by dip coating. Comparative study of x-ray diffraction patterns showed that Cr was successfully incorporated into the shell layer of ZnO nanorods. Moreover, energy-dispersive x-ray spectroscopy confirmed presence of Cr in this sample. It was observed that the thickness of the shell layer around the core of the ZnO nanorods was at least about 20 nm. Transmission electron microscopy of bare ZnO nanorods revealed single-crystalline structure. Based on optical results, both the encapsulation process and addition of Cr dopant decreased the optical bandgap of the samples. Indeed, the optical bandgap values of Cr-doped ZnO-encapsulated ZnO nanorods, ZnO-encapsulated ZnO nanorods, and bare ZnO nanorods were 2.89 eV, 3.15 eV, and 3.34 eV, respectively. The ultraviolet (UV) parameters demonstrated that incorporation of Cr dopant into the shell layer of ZnO nanorods considerably facilitated formation and transportation of photogenerated carriers, optimizing their performance as a practical UV detector. As a result, the photocurrent of the Cr-doped ZnO-encapsulated ZnO nanorods was the highest (0.6 mA), compared with ZnO-encapsulated ZnO nanorods and bare ZnO nanorods (0.21 mA and 0.06 mA, respectively).

  2. Hierarchical ZnO Nanowires-loaded Sb-doped SnO2-ZnO Micrograting Pattern via Direct Imprinting-assisted Hydrothermal Growth and Its Selective Detection of Acetone Molecules

    Science.gov (United States)

    Choi, Hak-Jong; Choi, Seon-Jin; Choo, Soyoung; Kim, Il-Doo; Lee, Heon

    2016-01-01

    We propose a novel synthetic route by combining imprinting transfer of a Sb-doped SnO2 (ATO)-ZnO composite micrograting pattern (MP), i.e., microstrip lines, on a sensor substrate and subsequent hydrothermal growth of ZnO nanowires (NWs) for producing a hierarchical ZnO NW-loaded ATO-ZnO MP as an improved chemo-resistive sensing layer. Here, ATO-ZnO MP structure with 3-μm line width, 9-μm pitch, and 6-μm height was fabricated by direct transfer of mixed ATO and ZnO nanoparticle (NP)-dispersed resists, which are pre-patterned on a polydimethylsiloxane (PDMS) mold. ZnO NWs with an average diameter of less than 50 nm and a height of 250 nm were quasi-vertically grown on the ATO-ZnO MP, leading to markedly enhanced surface area and heterojunction composites between each ATO NP, ZnO NP, and ZnO NW. A ZnO NW-loaded MP sensor with a relative ratio of 1:9 between ATO and ZnO (1:9 ATO-ZnO), exhibited highly sensitive and selective acetone sensing performance with 2.84-fold higher response (Rair/Rgas = 12.8) compared to that (Rair/Rgas = 4.5) of pristine 1:9 ATO-ZnO MP sensor at 5 ppm. Our results demonstrate the processing advantages of direct imprinting-assisted hydrothermal growth for large-scale homogeneous coating of hierarchical oxide layers, particularly for applications in highly sensitive and selective chemical sensors.

  3. Optical properties of single semiconductor nanowires and nanowire ensembles. Probing surface physics by photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Pfueller, Carsten

    2011-06-27

    This thesis presents a detailed investigation of the optical properties of semiconductor nanowires (NWs) in general and single GaN NWs and GaN NW ensembles in particular by photoluminescence (PL) spectroscopy. NWs are often considered as potential building blocks for future nanometer-scaled devices. This vision is based on several attractive features that are generally ascribed to NWs. For instance, they are expected to grow virtually free of strain and defects even on substrates with a large structural mismatch. In the first part of the thesis, some of these expectations are examined using semiconductor NWs of different materials. On the basis of the temperature-dependent PL of Au- and selfassisted GaAs/(Al,Ga)As core-shell NWs, the influence of foreign catalyst particles on the optical properties of NWs is investigated. For the Au-assisted NWs, we find a thermally activated, nonradiative recombination channel, possibly related to Auatoms incorporated from the catalyst. These results indicate the limited suitability of catalyst-assisted NWs for optoelectronic applications. The effect of the substrate choice is studied by comparing the PL of ZnO NWs grown on Si, Al{sub 2}O{sub 3}, and ZnO substrates. Their virtually identical optical characteristics indicate that the synthesis of NWs may indeed overcome the constraints that limit the heteroepitaxial deposition of thin films. The major part of this thesis discusses the optical properties of GaN NWs grown on Si substrates. The investigation of the PL of single GaN NWs and GaN NW ensembles reveals the significance of their large surface-to-volume ratio. Differences in the recombination behavior of GaNNW ensembles and GaN layers are observed. First, the large surface-to-volume ratio is discussed to be responsible for the different recombination mechanisms apparent in NWs. Second, certain optical features are only found in the PL of GaN NWs, but not in that of GaN layers. An unexpected broadening of the donor

  4. Photoluminescence measurements of ZnO heterostructures

    International Nuclear Information System (INIS)

    Adachi, Yutaka; Sakaguchi, Isao; Ohashi, Naoki; Haneda, Hajime; Ryoken, Haruki; Takenaka, Tadashi

    2003-01-01

    ZnO thin films were grown on TbAlO 3 single crystal substrates by pulsed laser deposition. In photoluminescence (PL) measurements, strong emissions from TbAlO 3 were observed with the emission from ZnO when the film thickness was less than 100 nm. The relationship between the ZnO film thickness and the emission intensity from TbAlO 3 was investigated in order to determine the penetration depth of excitation light. Information on the heterostructures ranging from the surface to a depth of 300 nm was obtained by PL measurements in this study, and the absorption coefficient for a wavelength of 325 nm was estimated to be 1.31x10 5 cm -1 . (author)

  5. Identifying individual n- and p-type ZnO nanowires by the output voltage sign of piezoelectric nanogenerator

    KAUST Repository

    Lin, S S

    2009-08-18

    Based on a comparative study between the piezoelectric outputs of n-type nanowires (NWs) and n-core/p-shell NWs along with the previous study (Lu et al 2009 Nano. Lett. 9 1223), we demonstrate a one-step technique for identifying the conductivity type of individual ZnO nanowires (NWs) based on the output of a piezoelectric nanogenerator without destroying the sample. A negative piezoelectric output voltage indicates an NW is n-type and it appears after the tip scans across the center of the NW, while a positive output voltage reveals p-type conductivity and it appears before the tip scans across the central line of the NW. This atomic force microscopy based technique is reliable for statistically mapping the majority carrier type in ZnO NWs arrays. The technique may also be applied to other wurtzite semiconductors, such as GaN, CdS and ZnS. © 2009 IOP Publishing Ltd.

  6. Growth of high-aspect ratio horizontally-aligned ZnO nanowire arrays.

    Science.gov (United States)

    Soman, Pranav; Darnell, Max; Feldman, Marc D; Chen, Shaochen

    2011-08-01

    A method of fabricating horizontally-aligned zinc-oxide (ZnO) nanowire (NW) arrays with full control over the width and length is demonstrated. SEM images reveal the hexagonal structure typical of zinc oxide NWs. Arrays of high-aspect ratio horizontal ZnO NWs are fabricated by making use of the lateral overgrowth from dot patterns created by electron beam lithography (EBL). An array of patterned wires are lifted off and transferred to a flexible PDMS substrate with possible applications in several key nanotechnology areas.

  7. Fabrication of a Miniaturized ZnO Nanowire Accelerometer and Its Performance Tests

    Directory of Open Access Journals (Sweden)

    Hyun Chan Kim

    2016-09-01

    Full Text Available This paper reports a miniaturized piezoelectric accelerometer suitable for a small haptic actuator array. The accelerometer is made with zinc oxide (ZnO nanowire (NW grown on a copper wafer by a hydrothermal process. The size of the accelerometer is 1.5 × 1.5 mm2, thus fitting the 1.8 × 1.8 mm2 haptic actuator array cell. The detailed fabrication process of the miniaturized accelerometer is illustrated. Performance evaluation of the fabricated accelerometer is conducted by comparing it with a commercial piezoelectric accelerometer. The output current of the fabricated accelerometer increases linearly with the acceleration. The miniaturized ZnO NW accelerometer is feasible for acceleration measurement of small and lightweight devices.

  8. The surface defect-related electroluminescence from the ZnO microwire

    Energy Technology Data Exchange (ETDEWEB)

    Ding Meng; Zhao Dongxu; Yao Bin; Li Binghui; Zhang Zhenzhong; Shan Chongxin; Shen Dezhen, E-mail: dxzhao2000@yahoo.com.cn [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130021 (China)

    2011-02-23

    Surface defect-related electroluminescence (EL) was realized from a single ZnO microwire-based metal-semiconductor-metal structure on a glass substrate. ZnO microwires were successfully fabricated using a simple chemical vapour deposition approach. Schottky contacts were detected between Au electrodes and the ZnO microwire. The EL spectrum showed a broad emission band covering the visible range from 400 to 700 nm. The possible EL emission mechanism is discussed in detail in this paper.

  9. Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films

    Science.gov (United States)

    Zhan, Peng; Wang, Weipeng; Liu, Can; Hu, Yang; Li, Zhengcao; Zhang, Zhengjun; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

    2012-02-01

    ZnO films became ferromagnetic when defects were introduced by thermal-annealing in flowing argon. This ferromagnetism, as shown by the photoluminescence measurement and positron annihilation analysis, was induced by the singly occupied oxygen vacancy with a saturated magnetization dependent positively on the amount of this vacancy. This study clarified the origin of the ferromagnetism of un-doped ZnO thin films and provides possibly an alternative way to prepare ferromagnetic ZnO films.

  10. Hydrothermal growth and characterizations of dandelion-like ZnO nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Kale, Rohidas B., E-mail: rb_kale@yahoo.co.in [Department of Physics, The Institute of Science, Madam Cama Road, Mumbai 400 032, (M.S.) (India); Lu, Shih-Yuan, E-mail: sylu@nthu.edu.tw [Department of Chemical Engineering, National Tsing-Hua University, Hsinchu 30013, Taiwan, ROC (China)

    2013-12-05

    Highlights: •The simple, low cost, environmental benign hydrothermal method has been used to synthesize ZnO nanostructure. •The SEM images reveal the interesting 3D dandelion-like morphology of synthesized ZnO nanostructure. The SAED pattern and HRTEM study confirms that the ZnO nanorods are single crystalline. •Change in experimental conditions dramatically changes the morphologies of the synthesized ZnO. •The room temperature PL study reveals strong band edge emission along with much weaker defect related blue emission. •The reaction and growth mechanism of ZnO nanostructure is also discussed. -- Abstract: Three dimensional (3D) ZnO nanostructures have been synthesized by using a facile low-cost hydrothermal method under mild conditions. Aqueous alkaline ammonia solution of Zn(CH{sub 3}COO){sub 2} is used to grow 3D ZnO nanostructures. The X-ray diffraction (XRD) study reveals the well crystallized hexagonal structure of ZnO. SEM observations depict that the ZnO product grows in the form of nanorods united together to form 3D dandelion-like nanostructures. The elemental analysis using EDAX technique confirms the stoichiometry of the ZnO nanorods. The product exhibits special optical properties with red-shifts in optical absorption peak (376 nm) as compared with those of conventional ZnO nanorods. PL spectra show emission peak (396 nm) at the near band-edge and peak (464 nm) originated from defects states that are produced during the hydrothermal growth. TEM and SAED results reveal single crystalline structure of the synthesized product. The reaction and growth mechanisms on the morphological evolution of the ZnO nanostructures are discussed. The morphology of ZnO product is investigated by varying the reaction time, temperature, and type of complexing reagent.

  11. Novel bilayer structure ZnO based photoanode for enhancing conversion efficiency in dye-sensitized solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Zhang Jin [Electronic Materials Research Laboratory, School of Electronic and Information Engineering, Xi' an, Jiaotong University, Xi' an 710049, Shaanxi (China); Que Wenxiu, E-mail: wxque@mail.xjtu.edu.cn [Electronic Materials Research Laboratory, School of Electronic and Information Engineering, Xi' an, Jiaotong University, Xi' an 710049, Shaanxi (China); Jia Qiaoying; Zhong Peng; Liao Yulong [Electronic Materials Research Laboratory, School of Electronic and Information Engineering, Xi' an, Jiaotong University, Xi' an 710049, Shaanxi (China); Ye Xiangdong; Ding Yucheng [State Key Laboratory of Manufacturing Systems Engineering, Xi' an, Jiaotong University, Xi' an 710049, Shaanxi (China)

    2011-07-07

    Highlights: > The ZnO nanocrystallite aggregates on the ZnO nanowire arrays (ZnO-(NCAs/NWs)) photoanode are successfully fabricated. > Results indicate that such a configuration of the ZnO-(NCAs/NWs) photoanode can significantly improve the efficiency of the DSSC. > The electron transport properties of the DSSC based on the ZnO-(NCAs/NWs) photoanode is discussed deeply. - Abstract: ZnO film with a novel bilayer structure, which consists of ZnO nanowire (ZnO NW) arrays as underlayer and polydisperse ZnO nanocrystallite aggregates (ZnO NCAs) as overlayer, is fabricated and studied as dye-sensitized solar-cell (DSSC) photoanode. Results indicate that such a configuration of the ZnO nanocrystallite aggregates on the ZnO nanowire arrays (ZnO-(NCAs/NWs)) can significantly improve the efficiency of the DSSC due to its fast electron transport, relatively high surface area and enhanced light-scattering capability. The short-circuit current density (J{sub sc}) and the energy-conversion efficiency ({eta}) of the DSSC based on the ZnO-(NCAs/NWs) photoanode are estimated and the values are 9.19 mA cm{sup -2} and 3.02%, respectively, which are much better than those of the cells formed only by the ZnO NWs (J{sub sc} = 4.02 mA cm{sup -2}, {eta} = 1.04%) or the ZnO NCAs (J{sub sc} = 7.14 mA cm{sup -2}, {eta} = 2.56%) photoanode. Moreover, the electron transport properties of the DSSC based on the ZnO-(NCAs/NWs) photoanode are also discussed.

  12. ZnO nanowires coated stainless steel meshes as hierarchical photocatalysts for catalytic photodegradation of four kinds of organic pollutants

    Energy Technology Data Exchange (ETDEWEB)

    Ko, Fu-Hsiang; Lo, Wei-Ju [Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu, 30010, Taiwan (China); Chang, Yu-Cheng, E-mail: ychang0127@gmail.com [Department of Materials Science and Engineering, Feng Chia University, Taichung, 40724, Taiwan (China); Guo, Jin-You; Chen, Chien-Ming [Department of Materials Science and Engineering, Feng Chia University, Taichung, 40724, Taiwan (China)

    2016-09-05

    ZnO nanostructures were grown on the stainless steel mesh substrates using an aqueous chemical growth method. The different additives (such as 1,3-diaminopropane and polyethyleneimine) can be used to control the morphology of ZnO nanostructures. ZnO nanowires exhibit very prominent green emission and week UV emission from defect and band gap in the cathodoluminescence spectrum, respectively. The different morphology of ZnO nanostructures on the stainless steel mesh substrates can be used to irradiate UV light for the photocatalytic degradation of four kinds of organic pollutants, such as methylene blue, rhodamine 6G, methyl orange, and 4-nitrophenol. The ZnO nanowires can provide a higher surface-to-volume ratio and stronger defect emission, resulting in their highest photocatalytic performance in 10 W UV light irradiation. The ZnO nanowire arrays on the stainless steel mesh substrates provide a large-scale, facile, low-cost, high surface area, and high photocatalytic efficiency, which shall be of significant value for practical applications of the decomposition of environment pollutants and reusing of wastewater treatment. - Highlights: • ZnO NWs were grown on the stainless steel mesh by aqueous chemical growth method. • Longer ZnO NW arrays have been grown at short reaction time (2 h). • ZnO NWs revealed green emission from surface defect in the CL spectrum. • The different morphologies of ZnO were evaluated organic pollutant degradation. • ZnO NWs were also exhibited great photocatalytic activity and reusability.

  13. The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing

    Science.gov (United States)

    Chang, Yi-Kuei; Hong, Franklin Chau-Nan

    2009-05-01

    A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min-1), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 105, a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm2 V-1 s-1. The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

  14. The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing

    International Nuclear Information System (INIS)

    Chang, Y-K; Hong, Franklin Chau-Nan

    2009-01-01

    A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min -1 ), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 10 5 , a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm 2 V -1 s -1 . The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

  15. The fabrication of ZnO nanowire field-effect transistors by roll-transfer printing

    Energy Technology Data Exchange (ETDEWEB)

    Chang, Y-K; Hong, Franklin Chau-Nan [Department of Chemical Engineering, National Cheng Kung University, 1 University Road, Tainan 70101, Taiwan (China)], E-mail: hong@mail.ncku.edu.tw

    2009-05-13

    A method with the potential to fabricate large-area nanowire field-effect transistors (NW-FETs) was demonstrated in this study. Using a high-speed roller (20-80 cm min{sup -1}), transfer printing was successfully employed to transfer vertically aligned zinc oxide (ZnO) nanowires grown on a donor substrate to a polydimethylsiloxane (PDMS) stamp and then print the ordered ZnO nanowire arrays on the received substrate for the fabrication of NW-FETs. ZnO NW-FETs fabricated by this method exhibit high performances with a threshold voltage of around 0.25 V, a current on/off ratio as high as 10{sup 5}, a subthreshold slope of 360 mV/dec, and a field-effect mobility of around 90 cm{sup 2} V{sup -1} s{sup -1}. The excellent device characteristics suggest that the roll-transfer printing technique, which is compatible with the roll-to-roll (R2R) process and operated in atmosphere, has a good potential for the high-speed fabrication of large-area nanowire transistors for flexible devices and flat panel displays.

  16. ZnO nanodisk based UV detectors with printed electrodes.

    Science.gov (United States)

    Alenezi, Mohammad R; Alshammari, Abdullah S; Alzanki, Talal H; Jarowski, Peter; Henley, Simon John; Silva, S Ravi P

    2014-04-08

    The fabrication of highly functional materials for practical devices requires a deep understanding of the association between morphological and structural properties and applications. A controlled hydrothermal method to produce single crystal ZnO hexagonal nanodisks, nanorings, and nanoroses using a mixed solution of zinc sulfate (ZnSO4) and hexamethylenetetramine (HMTA) without the need of catalysts, substrates, or templates at low temperature (75 °C) is introduced. Metal-semiconductor-metal (MSM) ultraviolet (UV) detectors were fabricated based on individual and multiple single-crystal zinc oxide (ZnO) hexagonal nanodisks. High quality single crystal individual nanodisk devices were fabricated with inkjet-printed silver electrodes. The detectors fabricated show record photoresponsivity (3300 A/W) and external quantum efficiency (1.2 × 10(4)), which we attribute to the absence of grain boundaries in the single crystal ZnO nanodisk and the polarity of its exposed surface.

  17. ZnO nanowire co-growth on SiO2 and C by carbothermal reduction and vapour advection

    International Nuclear Information System (INIS)

    Vega, N C; Caram, J; Grinblat, G; Comedi, D; Wallar, R; LaPierre, R R; Tirado, M

    2012-01-01

    Vertically aligned ZnO nanowires (NWs) were grown on Au-nanocluster-seeded amorphous SiO 2 films by the advective transport and deposition of Zn vapours obtained from the carbothermal reaction of graphite and ZnO powders. Both the NW volume and visible-to-UV photoluminescence ratio were found to be strong functions of, and hence could be tailored by, the (ZnO+C) source–SiO 2 substrate distance. We observe C flakes on the ZnO NWs/SiO 2 substrates which exhibit short NWs that developed on both sides. The SiO 2 and C substrates/NW interfaces were studied in detail to determine growth mechanisms. NWs on Au-seeded SiO 2 were promoted by a rough ZnO seed layer whose formation was catalysed by the Au clusters. In contrast, NWs grew without any seed on C. A correlation comprising three orders of magnitude between the visible-to-UV photoluminescence intensity ratio and the NW volume is found, which results from a characteristic Zn partial pressure profile that fixes both O deficiency defect concentration and growth rate. (paper)

  18. The effects of addition of citric acid on the morphologies of ZnO nanorods

    International Nuclear Information System (INIS)

    Yang Zao; Liu Quanhui; Yang Lei

    2007-01-01

    ZnO nanorods of 25-100 nm in diameter and 0.2-1 μm in length were fabricated through citric acid assisted annealing process. The microstructure of ZnO nanorods was characterized by X-ray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy and field-emission scanning electron microscopy, respectively. As a result, it was found that ZnO nanorods were single crystalline and pure. The effects of the growth conditions such as addition of citric acid, annealing temperature on the morphologies of ZnO nanostructures have also been investigated. At the given temperature the length decreased but the diameter increased with addition of the mass of citric acid. With the rising of the calcining heat, the shape of ZnO changed from rod to granule for a given amount of citric acid. Finally, the mechanism for citric acid assisted annealing synthesis of the ZnO nanostructure is discussed

  19. III-nitrides on oxygen- and zinc-face ZnO substrates

    International Nuclear Information System (INIS)

    Namkoong, Gon; Burnham, Shawn; Lee, Kyoung-Keun; Trybus, Elaissa; Doolittle, W. Alan; Losurdo, Maria; Capezzuto, Pio; Bruno, Giovanni; Nemeth, Bill; Nause, Jeff

    2005-01-01

    The characteristics of III-nitrides grown on zinc- and oxygen-face ZnO by plasma-assisted molecular beam epitaxy were investigated. The reflection high-energy electron diffraction pattern indicates formation of a cubic phase at the interface between III-nitride and both Zn- and O-face ZnO. The polarity indicates that Zn-face ZnO leads to a single polarity, while O-face ZnO forms mixed polarity of III-nitrides. Furthermore, by using a vicinal ZnO substrate, the terrace-step growth of GaN was realized with a reduction by two orders of magnitude in the dislocation-related etch pit density to ∼10 8 cm -2 , while a dislocation density of ∼10 10 cm -2 was obtained on the on-axis ZnO substrates

  20. Room temperature synthesis and optical properties of small diameter (5 nm) ZnO nanorod arrays.

    Science.gov (United States)

    Cho, Seungho; Jang, Ji-Wook; Lee, Jae Sung; Lee, Kun-Hong

    2010-10-01

    We report a simple wet-chemical synthesis of ∼5 nm diameter ZnO nanorod arrays at room temperature (20 °C) and normal atmospheric pressure (1 atm) and their optical properties. They were single crystalline in nature, and grew in the [001] direction. These small diameter ZnO nanorod arrays can also be synthesized at 0 °C. Control experiments were also conducted. On the basis of the results, we propose a mechanism for the spontaneous growth of the small diameter ZnO structures. The optical properties of the 5 nm diameter ZnO nanorod arrays synthesized using this method were probed by UV-Visible diffuse reflectance spectroscopy. A clear blue-shift, relative to the absorption band from 50 nm diameter ZnO nanorod arrays, was attributed to the quantum confinement effects caused by the small nanocrystal size in the 5 nm diameter ZnO nanorods.

  1. Optimization of CVD parameters for long ZnO NWs grown on ITO

    Indian Academy of Sciences (India)

    The optimization of chemical vapour deposition (CVD) parameters for long and vertically aligned (VA) ZnO nanowires (NWs) were investigated. Typical ZnO NWs as a single crystal grown on indium tin oxide (ITO)-coated glass substrate were successfully synthesized. First, the conducted side of ITO–glass substrate was ...

  2. Low-Temperature Rapid Fabrication of ZnO Nanowire UV Sensor Array by Laser-Induced Local Hydrothermal Growth

    Directory of Open Access Journals (Sweden)

    Sukjoon Hong

    2013-01-01

    Full Text Available We demonstrate ZnO nanowire based UV sensor by laser-induced hydrothermal growth of ZnO nanowire. By inducing a localized temperature rise using focused laser, ZnO nanowire array at ~15 μm size consists of individual nanowires with ~8 μm length and 200~400 nm diameter is readily synthesized on gold electrode within 30 min at the desired position. The laser-induced growth process is consecutively applied on two different points to bridge the micron gap between the electrodes. The resultant photoconductive ZnO NW interconnections display 2~3 orders increase in the current upon the UV exposure at a fixed voltage bias. It is also confirmed that the amount of photocurrent can be easily adjusted by changing the number of ZnO NW array junctions. The device exhibits clear response to the repeated UV illumination, suggesting that this process can be usefully applied for the facile fabrication of low-cost UV sensor array.

  3. ZnO nanowire/TiO2 nanoparticle photoanodes prepared by the ultrasonic irradiation assisted dip-coating method

    International Nuclear Information System (INIS)

    Gan Xiaoyan; Li Xiaomin; Gao Xiangdong; Zhuge Fuwei; Yu Weidong

    2010-01-01

    Hybrid ZnO/TiO 2 photoanodes for dye-sensitized solar cells were prepared by combining ZnO nanowire (NW) arrays and TiO 2 nanoparticles (NPs) with the assistance of the ultrasonic irradiation assisted dip-coating method. Results show that the ultrasonic irradiation was an efficient way to promote the gap filling of TiO 2 NPs in the interstices of ZnO NWs. Hybrid ZnO NW/TiO 2 NP electrodes prepared with ultrasonic treatment exhibited better gap filling efficiency and higher visible absorptance. The overall conversion efficiency of the hybrid electrode was 0.79%, representing 35% improvement compared with that of the traditional one (0.58%). The enlarged surface area and improved attachments of TiO 2 NPs onto the walls of ZnO NWs induced by the application of ultrasonic irradiation may be the underlying reason. Electrochemical impedance spectroscopy measurements indicated that hybrid electrodes combined the advantages of improved electron transport along the ZnO NWs and increased surface area provided by infiltrated TiO 2 NPs, both of which are responsible for the improved cell efficiency.

  4. Atomic absorption photometry of excess Zn in ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Lott, K.; Shinkarenko, S.; Tuern, L. [Department of Materials Science, Tallinn University of Technology, Ehitajate tee 5, 19086 Tallinn (Estonia); Kirsanova, T.; Grebennik, A.; Vishnjakov, A. [Department of Physical Chemistry, D. Mendelejev University of Chemical Technology of Russia, Miusskaya Sq. 9, 125047 Moscow (Russian Federation)

    2005-02-01

    Zn excess in ZnO is built up automatically at high temperatures. Excess Zn in hydrothermally grown ZnO single crystals were investigated by the atomic absorption photometry (AAP) method. To determine the excess zinc in ZnO samples, the AAP of zinc vapour was used in the conditions of solid-vapour equilibrium. Zn AAP allowed to eliminate excess Zn connected differentially in ZnO samples. To fix Zn non-stoichiometry, all the ZnO samples tested were previously heat treated at temperature interval from 850 to 900 C and at fixed Zn vapour pressures from 0.1 to 0.9 of saturated zinc vapour pressure at given treatment temperature. The analysis of temperature dependence of zinc vapour pressure indicated that the impurity metals take active role in the determination of non-stoichiometric zinc. The impurities Mn, Fe, Co, Ni and Cu form oxides which will reduce during annealing in Zn vapor up to metals form. During AAP measurement in optical cuvette, these metals react with ZnO and give additional Zn vapor pressure. (copyright 2005 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Sodium doping in ZnO crystals

    Science.gov (United States)

    Parmar, N. S.; Lynn, K. G.

    2015-01-01

    ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1-3.5) × 1017 cm-3. Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a NaZn level at ˜(220-270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4-5) orders of magnitude at room temperature.

  6. Sodium doping in ZnO crystals

    International Nuclear Information System (INIS)

    Parmar, N. S.; Lynn, K. G.

    2015-01-01

    ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1–3.5) × 10 17  cm −3 . Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a Na Zn level at ∼(220–270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4–5) orders of magnitude at room temperature

  7. Sodium doping in ZnO crystals

    Energy Technology Data Exchange (ETDEWEB)

    Parmar, N. S., E-mail: nparmar@wsu.edu; Lynn, K. G. [Center for Materials Research, Washington State University, Pullman, Washington 99164-2711 (United States)

    2015-01-12

    ZnO bulk single crystals were doped with sodium by thermal diffusion. Positron annihilations spectroscopy confirms the filling of zinc vacancies, to >6 μm deep in the bulk. Secondary-ion mass spectrometry measurement shows the diffusion of sodium up to 8 μm with concentration (1–3.5) × 10{sup 17 }cm{sup −3}. Broad photoluminescence excitation peak at 3.1 eV, with onset appearance at 3.15 eV in Na:ZnO, is attributed to an electronic transition from a Na{sub Zn} level at ∼(220–270) meV to the conduction band. Resistivity in Na doped ZnO crystals increases up to (4–5) orders of magnitude at room temperature.

  8. Dynamic recovery and optical properties changes in He-implanted ZnO nanoparticles

    International Nuclear Information System (INIS)

    Lee, J.-K.; Harriman, T.A.; Lucca, D.A.; Jung, H.S.; Ryan, D.B.; Nastasi, M.

    2007-01-01

    A study of the effects of ion-implanted He + on the photoluminescence (PL) of ZnO nanoparticles is presented. This investigation is motivated by the need to further understand the effects of damage resulting from the implantation process on the luminescence response of the nanoparticles. ZnO nanoparticles were synthesized by reacting zinc acetate with lithium hydroxide. The nanoparticle suspension was then dip coated on SiO 2 substrates producing thin films of ZnO nanoparticles, which were then implanted with He + ions at either room temperature or 400 deg. C. Following implantation, the PL spectrum of the ZnO nanoparticles was investigated and compared to that obtained from He-implanted bulk ZnO. Change in the overall luminescence efficiency was found to depend on both the size of the nanoparticles and the implantation temperature, and is attributed to the dynamic recovery of collision cascades in the ZnO nanoparticles. In addition, a comparison of He + -implanted ZnO nanoparticles with He + -implanted ZnO single crystals indicates that the origin of the green luminescence occurring from the ZnO nanoparticles is near-surface complex defects

  9. Synthesis and characterization of flowerlike ZnO nanostructures via an ethylenediamine-meditated solution route

    International Nuclear Information System (INIS)

    Gao Xiangdong; Li Xiaomin; Yu Weidong

    2005-01-01

    Flowerlike ZnO nanostructures were deposited on Si substrate by choosing hexamethylenetetramine as the nucleation control reagent and ethylenediamine as the chelating and capping reagent. Structural and optical measurements reveal that obtained ZnO exhibits well-defined flowerlike morphology, hexagonal wurtzite structure, uniform distribution on substrate, and strong photoluminescence in ultraviolet band. The well-arrayed pedals of each ZnO flower possess the typical tapering feature, and are built up by many well-aligned ZnO nanorods. Moreover, each single nanorod building up the pedal exhibits the single crystal nature and the growth direction along c-axis. Effects of the precursor composition on the morphology of ZnO were discussed

  10. Tuning magnetism by biaxial strain in native ZnO.

    Science.gov (United States)

    Peng, Chengxiao; Wang, Yuanxu; Cheng, Zhenxiang; Zhang, Guangbiao; Wang, Chao; Yang, Gui

    2015-07-07

    Magnetic ZnO, one of the most important diluted magnetic semiconductors (DMS), has attracted great scientific interest because of its possible technological applications in optomagnetic devices. Magnetism in this material is usually delicately tuned by the doping level, dislocations, and local structures. The rational control of magnetism in ZnO is a highly attractive approach for practical applications. Here, the tuning effect of biaxial strain on the d(0) magnetism of native imperfect ZnO is demonstrated through first-principles calculations. Our calculation results show that strain conditions have little effect on the defect formation energy of Zn and O vacancies in ZnO, but they do affect the magnetism significantly. For a cation vacancy, increasing the compressive strain will obviously decrease its magnetic moment, while tensile strain cannot change the moment, which remains constant at 2 μB. For a singly charged anion vacancy, however, the dependence of the magnetic moment on strain is opposite to that of the Zn vacancy. Furthermore, the ferromagnetic state is always present, irrespective of the strain type, for ZnO with two zinc vacancies, 2VZns. A large tensile strain is favorable for improving the Curie temperature and realizing room temperature ferromagnetism for ZnO-based native semiconductors. For ZnO with two singly charged oxygen vacancies, 2Vs, no ferromagnetic ordering can be observed. Our work points the way to the rational design of materials beyond ZnO with novel non-intrinsic functionality by simply tuning the strain in a thin film form.

  11. Influence of defects and nanoscale strain on the photovoltaic properties of CdS/CdSe nanocomposite co-sensitized ZnO nanowire solar cells

    International Nuclear Information System (INIS)

    Jung, Kyungeun; Lee, Jeongwon; Kim, Young-Min; Kim, Joosun; Kim, Choong-Un; Lee, Man-Jong

    2016-01-01

    Highlights: • CdSe/CdS nanocomposites were coated on ZnO nanowires using solution processes. • In situ CdSe/CdS co-sensitizers resulted in a 3-fold increase in efficiency. • Nano-strain analyses at interfaces and CdS layers were performed. • Drastic decrease of nano-strain in CdSe/CdS was observed. • Relaxed nano-strain was attributed to the increase of efficiency. - Abstract: This paper reports the mechanism of the power conversion efficiency (PCE) improvement in the ZnO nanowires (NW) based solar cells by using CdS/CdSe nanocomposite sensitizers instead of a single CdS quantum-dot (QD) sensitization layer. Two cells with the different type of the sensitization layers were essentially consists of the high-density ZnO nanowire (NW) and a sensitization layer of either CdS-QD or CdS/CdSe nanocomposite, which were produced by an in-situ sequential assembly process of both ionic layer absorption and reaction (SILAR) and chemical bath deposition (CBD). Measurement on the PCE revealed that the cell with CdS/CdSe nanocomposite showed a three-fold increase in PCE compared to the one with a CdS-QD layer. While such improvement in PCE appeared to be consistent with the step-wise band alignment mechanism suggested for the type-II heterojunction of CdSe/CdS/ZnO structures, our microstructural analysis of the cell structure yielded results strongly indicating that the reduction of both interface defects and misfit strain in the CdS lattices plays an additional role on the PCE improvement. Analyses on the interface and the CdS crystallinity using high-resolution electron microscopy (HRTEM) combined with the geometric phase analysis (GPA) revealed that the addition of CdSe effectively reduced the lattice strain in the CdS without introducing misfit dislocations at CdS/CdSe interface, probably owing to Se anion diffusion (or exchange) to the defective SILAR CdS layer during the CBD process. Although an entire enhancement in PCE by the addition of CdSe layer seen in our

  12. Photoelectrochemical performance of N-doped ZnO branched nanowire photoanodes

    Directory of Open Access Journals (Sweden)

    Shrok Allami

    2017-10-01

    Full Text Available A ZnO branched-nanowire (BNW photoanode was doped with N for use in a photoelectrochemical cell (PEC to generate H2 from water splitting. First, ZnO BNWs were synthesized by chemical bath deposition method. Two experimental methods were used for N-doping: the time-controlled direct-current glow discharge plasma (DCGDP and the DC magnetron plasma (DCMP methods, to optimize N-doping of the NW structure. X-ray photoelectron spectroscopy (XPS provided the N distribution and atomic percentage in the BNWs. The XPS results confirmed that N distribution into ZnO BNWs occurred by N substitution of O sites in the ZnO structure and through well-screened molecular N2. The morphologies and structures of the fabricated nanostructures were investigated by field-emission scanning electron microscopy and X-ray diffraction respectively. The photoanode performance was demonstrated in photoelectrochemical studies at various power densities under both dark and illuminated conditions. Increasing the N amount in the ZnO BNWs increased the photocurrent in the PEC. Keywords: Engineering, Condensed matter physics, Nanotechnology, Materials science

  13. On-chip surface modified nanostructured ZnO as functional pH sensors

    International Nuclear Information System (INIS)

    Zhang, Qing; Liu, Wenpeng; Sun, Chongling; Zhang, Hao; Pang, Wei; Zhang, Daihua; Duan, Xuexin

    2015-01-01

    Zinc oxide (ZnO) nanostructures are promising candidates as electronic components for biological and chemical applications. In this study, ZnO ultra-fine nanowire (NW) and nanoflake (NF) hybrid structures have been prepared by Au-assisted chemical vapor deposition (CVD) under ambient pressure. Their surface morphology, lattice structures, and crystal orientation were investigated by scanning electron microscopy (SEM), x-ray diffraction (XRD), and transmission electron microscopy (TEM). Two types of ZnO nanostructures were successfully integrated as gate electrodes in extended-gate field-effect transistors (EGFETs). Due to the amphoteric properties of ZnO, such devices function as pH sensors. We found that the ultra-fine NWs, which were more than 50 μm in length and less than 100 nm in diameter, performed better in the pH sensing process than NW–NF hybrid structures because of their higher surface-to-volume ratio, considering the Nernst equation and the Gouy–Chapman–Stern model. Furthermore, the surface coating of (3-Aminopropyl)triethoxysilane (APTES) protects ZnO nanostructures in both acidic and alkaline environments, thus enhancing the device stability and extending its pH sensing dynamic range. (paper)

  14. NW CSC annual report fiscal year 2013

    Science.gov (United States)

    Bisbal, Gustavo A.

    2013-01-01

    The Northwest Climate Science Center (NW CSC) was established in 2010 as one of eight regional Climate Science Centers created by the Department of the Interior (DOI). The NW CSC encompasses Washing-ton, Oregon, Idaho, and western Montana and has overlapping boundaries with three Landscape Conservation Cooperatives (LCCs): the Great Northern, the Great Basin, and the North Pacific. With guidance from its Executive Stakeholder Advisory Committee (ESAC), the NW CSC and its partner LCCs are addressing the highest priority regional climate science needs of Northwest natural and cultural resource managers. Climate Science Centers tap into the scientific expertise of both the U.S. Geological Survey (USGS) and academic institutions. The NW CSC is supported by an academic consortium with the capacity to generate climate science and tools in a coordinated fashion, serving stakeholders across the Northwest region. This consortium is primarily represented by Oregon State University (OSU), the University of Id-ho (UI), and the University of Washington (UW). The academic consortium and USGS provide capabilities in climate science, ecology, impacts and vulnerability assessment, modeling, adaptation planning, and advanced information technology, all necessary to address and respond to climate change in the Northwest. University members also recruit and train graduate students and early-career scientists. This Annual Report summarizes progress for the goals set out in the NW CSC Strategic Plan for 2012-2015 (http://www.doi.gov/csc/northwest/upload/Northwest-CSC-Strategic-Plan.cfm) and the NW CSC Work-plan for Fiscal Year (FY) 2013 (October 1, 2012 through September 30, 2013). The report follows the structure of the Strategic Plan, which describes the five core services (Executive, Science, Data, Communications, and Education and Training) provided by the NW CSC in support of the stated vision: Our Vision: To become nationally recognized as a best-practice model for the provision

  15. Highly stable piezo-immunoglobulin-biosensing of a SiO2/ZnO nanogenerator as a self-powered/active biosensor arising from the field effect influenced piezoelectric screening effect.

    Science.gov (United States)

    Zhao, Yayu; Fu, Yongming; Wang, Penglei; Xing, Lili; Xue, Xinyu

    2015-02-07

    Highly stable piezo-immunoglobulin-biosensing has been realized from a SiO2/ZnO nanowire (NW) nanogenerator (NG) as a self-powered/active biosensor. The piezoelectric output generated by the SiO2/ZnO NW NG can act not only as a power source for driving the device, but also as a sensing signal for detecting immunoglobulin G (IgG). The stability of the device is very high, and the relative standard deviation (RSD) ranges from 1.20% to 4.20%. The limit of detection (LOD) of IgG on the device can reach 5.7 ng mL(-1). The response of the device is in a linear relationship with IgG concentration. The biosensing performance of SiO2/ZnO NWs is much higher than that of bare ZnO NWs. A SiO2 layer uniformly coated on the surface of the ZnO NW acts as the gate insulation layer, which increases mechanical robustness and protects it from the electrical leakages and short circuits. The IgG biomolecules modified on the surface of the SiO2/ZnO NW act as a gate potential, and the field effect can influence the surface electron density of ZnO NWs, which varies the screening effect of free-carriers on the piezoelectric output. The present results demonstrate a feasible approach for a highly stable self-powered/active biosensor.

  16. An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure.

    Science.gov (United States)

    Zheng, Zhi; Gan, Lin; Zhang, Jianbing; Zhuge, Fuwei; Zhai, Tianyou

    2017-03-01

    ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

  17. Solution precursor plasma deposition of nanostructured ZnO coatings

    International Nuclear Information System (INIS)

    Tummala, Raghavender; Guduru, Ramesh K.; Mohanty, Pravansu S.

    2011-01-01

    Highlights: → The solution precursor route employed is an inexpensive process with capability to produce large scale coatings at fast rates on mass scale production. → It is highly capable of developing tailorable nanostructures. → This technique can be employed to spray the coatings on any kind of substrates including polymers. → The ZnO coatings developed via solution precursor plasma spray process have good electrical conductivity and reflectivity properties in spite of possessing large amount of particulate boundaries, porosity and nanostructured grains. -- Abstract: Zinc oxide (ZnO) is a wide band gap semiconducting material that has various applications including optical, electronic, biomedical and corrosion protection. It is usually synthesized via processing routes, such as vapor deposition techniques, sol-gel, spray pyrolysis and thermal spray of pre-synthesized ZnO powders. Cheaper and faster synthesis techniques are of technological importance due to increased demand in alternative energy applications. Here, we report synthesis of nanostructured ZnO coatings directly from a solution precursor in a single step using plasma spray technique. Nanostructured ZnO coatings were deposited from the solution precursor prepared using zinc acetate and water/isopropanol. An axial liquid atomizer was employed in a DC plasma spray torch to create fine droplets of precursor for faster thermal treatment in the plasma plume to form ZnO. Microstructures of coatings revealed ultrafine particulate agglomerates. X-ray diffraction confirmed polycrystalline nature and hexagonal Wurtzite crystal structure of the coatings. Transmission electron microscopy studies showed fine grains in the range of 10-40 nm. Observed optical transmittance (∼65-80%) and reflectivity (∼65-70%) in the visible spectrum, and electrical resistivity (48.5-50.1 mΩ cm) of ZnO coatings are attributed to ultrafine particulate morphology of the coatings.

  18. Solution precursor plasma deposition of nanostructured ZnO coatings

    Energy Technology Data Exchange (ETDEWEB)

    Tummala, Raghavender [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States); Guduru, Ramesh K., E-mail: rkguduru@umich.edu [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States); Mohanty, Pravansu S. [Department of Mechanical Engineering, University of Michigan - Dearborn, MI 48128 (United States)

    2011-08-15

    Highlights: {yields} The solution precursor route employed is an inexpensive process with capability to produce large scale coatings at fast rates on mass scale production. {yields} It is highly capable of developing tailorable nanostructures. {yields} This technique can be employed to spray the coatings on any kind of substrates including polymers. {yields} The ZnO coatings developed via solution precursor plasma spray process have good electrical conductivity and reflectivity properties in spite of possessing large amount of particulate boundaries, porosity and nanostructured grains. -- Abstract: Zinc oxide (ZnO) is a wide band gap semiconducting material that has various applications including optical, electronic, biomedical and corrosion protection. It is usually synthesized via processing routes, such as vapor deposition techniques, sol-gel, spray pyrolysis and thermal spray of pre-synthesized ZnO powders. Cheaper and faster synthesis techniques are of technological importance due to increased demand in alternative energy applications. Here, we report synthesis of nanostructured ZnO coatings directly from a solution precursor in a single step using plasma spray technique. Nanostructured ZnO coatings were deposited from the solution precursor prepared using zinc acetate and water/isopropanol. An axial liquid atomizer was employed in a DC plasma spray torch to create fine droplets of precursor for faster thermal treatment in the plasma plume to form ZnO. Microstructures of coatings revealed ultrafine particulate agglomerates. X-ray diffraction confirmed polycrystalline nature and hexagonal Wurtzite crystal structure of the coatings. Transmission electron microscopy studies showed fine grains in the range of 10-40 nm. Observed optical transmittance ({approx}65-80%) and reflectivity ({approx}65-70%) in the visible spectrum, and electrical resistivity (48.5-50.1 m{Omega} cm) of ZnO coatings are attributed to ultrafine particulate morphology of the coatings.

  19. Dye-sensitized solar cells with a tri-layer ZnO photo-electrode

    Energy Technology Data Exchange (ETDEWEB)

    Li, Hui; Bai, Jiafan; Feng, Bo; Lu, Xiong; Weng, Jie; Jiang, Chongxi; Wang, Jianxin, E-mail: j.wang63@gmail.com

    2013-11-25

    Graphical abstract: Schematic diagram for the energy-level, the paths of charge transfer, the model of light scattering in the top layer and the assembly of the DSSC. Highlights: •We successfully fabricated ZnO photo-anodes with a tri-layer ZnO structure. •The ZnO seed layer decreased the transfer resistance at the ZnO/FTO interface. •The ZnO light scattering layer could increase the number of photoelectrons. •J{sub sc} and V{sub oc} were greatly enhanced via the use of the tri-layer ZnO structure. •The efficiency of the DSSCs for a tri-layer ZnO structure was the highest. -- Abstract: In this paper, a tri-layer ZnO structure was designed to fabricate the photo-anodes of dye-sensitized solar cells (DSSC). The results showed that an overall energy-conversion efficiency of 1.18% was achieved for DSSC with the tri-layer photo-anode, which was 14% higher than that obtained from a bilayer ZnO photo-anode (with an efficiency of 1.04%) and 76% higher than that fabricated with a single layer photo-anode (with an efficiency of 0.67%). The photo-current density and the open circuit voltage have greatly increased via the use of the tri-layer ZnO structure. Thus, the tri-layer ZnO structure might provide a new route for the improvement of the overall energy-conversion efficiency for the DSSC of ZnO.

  20. Dye-sensitized solar cells with a tri-layer ZnO photo-electrode

    International Nuclear Information System (INIS)

    Li, Hui; Bai, Jiafan; Feng, Bo; Lu, Xiong; Weng, Jie; Jiang, Chongxi; Wang, Jianxin

    2013-01-01

    Graphical abstract: Schematic diagram for the energy-level, the paths of charge transfer, the model of light scattering in the top layer and the assembly of the DSSC. Highlights: •We successfully fabricated ZnO photo-anodes with a tri-layer ZnO structure. •The ZnO seed layer decreased the transfer resistance at the ZnO/FTO interface. •The ZnO light scattering layer could increase the number of photoelectrons. •J sc and V oc were greatly enhanced via the use of the tri-layer ZnO structure. •The efficiency of the DSSCs for a tri-layer ZnO structure was the highest. -- Abstract: In this paper, a tri-layer ZnO structure was designed to fabricate the photo-anodes of dye-sensitized solar cells (DSSC). The results showed that an overall energy-conversion efficiency of 1.18% was achieved for DSSC with the tri-layer photo-anode, which was 14% higher than that obtained from a bilayer ZnO photo-anode (with an efficiency of 1.04%) and 76% higher than that fabricated with a single layer photo-anode (with an efficiency of 0.67%). The photo-current density and the open circuit voltage have greatly increased via the use of the tri-layer ZnO structure. Thus, the tri-layer ZnO structure might provide a new route for the improvement of the overall energy-conversion efficiency for the DSSC of ZnO

  1. A novel low-temperature chemical solution route for straight and dendrite-like ZnO nanostructures

    International Nuclear Information System (INIS)

    Zhang Hui; Du Ning; Wu Jianbo; Ma, Xiangyang; Yang Deren; Zhang Xiaobin; Yang Zhiqing

    2007-01-01

    The straight and dendrite-like growths of ZnO have been completely and simply controlled by the status of ZnO seed instead of surfactant, template, oriented attachment, and ZnO buffer layer on the substrate in the chemical reaction synthesis of ZnO nanostructures. The monodisperse ZnO seeds, which are prepared by in situ quickly injecting the cool mixed zinc acetate and potassium hydrate ethanol solution into the hot matrix aqueous solution of zinc nitrate hydrate and diethylenetriamine at 95 deg. C, improve the straight growth and lots of uniform, straight, and single-crystalline ZnO nanorods with about 20-30 nm in diameter and 300 nm in length are achieved. While, the aggregated ZnO seeds, which are prepared by dropwise adding potassium hydrate ethanol solution into zinc acetate ethanol solution at 60 deg. C for 3 h, result in the dendrite-like growth and the bur-like ZnO nanostructures consisting of hundreds of nanorods with about 30-50 nm in diameter and several micrometers in length are formed. Furthermore, the approach presented here provides a simple, low-cost, environmental-friendly and high efficiency route to synthesize the high quality ZnO nanorods and bur-like ZnO nanostructures

  2. Activation of room temperature ferromagnetism in ZnO films by surface functionalization with thiol and amine

    International Nuclear Information System (INIS)

    Jayalakshmi, G.; Gopalakrishnan, N.; Balasubramanian, T.

    2013-01-01

    Highlights: ► Room temperature ferromagnetism (RTFM) is observed in surface functionalized ZnO films. ► Surface functionalization is a new approach to make ZnO as ferromagnetic. ► The RTFM is attributed to the interaction between the adsorbates and the surface of ZnO. ► The oxygen vacancies are passivated upon surface functionalization. - Abstract: In this paper, we report the activation of room temperature ferromagnetism in ZnO films by surface functionalization with thiol and amine. The pure and surface functionalized ZnO films have been examined by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL) and vibrating sample magnetometer (VSM) measurements. XRD measurements show that all the films have single phase and (0 0 2) preferred orientation. The chemical bonding of ZnO with thiol and amine molecules has been confirmed by XPS measurements. The quenching of visible emission in PL spectra indicates that the surface defects are passivated by functionalization with thiol and amine. Surface functionalization of ZnO films with thiol and amine induces robust room temperature ferromagnetism in ZnO films as evidenced from VSM measurements. It is concluded that the observed ferromagnetic behavior in functionalized ZnO films is attributed to the different electronegativity of the atom in the thiol (or amine) and the surface of ZnO.

  3. Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films

    Science.gov (United States)

    Zhan, Peng; Wang, Weipeng; Xie, Zheng; Li, Zhengcao; Zhang, Zhengjun; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

    2012-07-01

    Room-temperature ferromagnetism was achieved in un-doped ZnO films on silicon and quartz substrates. Photoluminescence measurement and positron annihilation analysis suggested that the ferromagnetism was originated from singly occupied oxygen vacancies (roughly estimated as ˜0.55 μB/vacancy), created in ZnO films by annealing in argon. The saturated magnetization of ZnO films was enhanced from ˜0.44 emu/g (on quartz) to ˜1.18 emu/g (on silicon) after annealing at 600 °C, as silicon acted as oxygen getter and created more oxygen vacancies in ZnO films. This study clarified the origin of ferromagnetism in un-doped ZnO and provides an idea to enhance the ferromagnetism.

  4. Permanent bending and alignment of ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Borschel, Christian; Spindler, Susann; Oertel, Michael; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Lerose, Damiana [MPI fuer Mikrostrukturphysik, Weinberg 2, 06120 Halle/Saale (Germany); Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Bochmann, Arne [Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Christiansen, Silke H. [Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); MPI fuer die Physik des Lichts, Guenther-Scharowsky-Str. 1, 91058 Erlangen (Germany); Nietzsche, Sandor [Zentrum fuer Elektronenmikroskopie, Friedrich-Schiller-Universitaet Jena, Ziegelmuehlenweg 1, 07743 Jena (Germany)

    2011-07-01

    Ion beams can be used to bend or re-align nanowires permanently, after they have been grown. We have irradiated ZnO nanowires with ions of different species and energy, achieving bending and alignment in various directions. We study the bending of single nanowires as well as the simultaneous alignment of large ensembles of ZnO nanowires in detail. Computer simulations show that the bending is initiated by ion beam induced damage. Dislocations are identified to relax stresses and make the bending and alignment permanent and resistant against annealing procedures.

  5. Raman scattering of quasimodes in ZnO

    International Nuclear Information System (INIS)

    Alarcon-Llado, E; Cusco, R; Artus, L; Jimenez, J; Wang, B; Callahan, M

    2008-01-01

    The angular dependence of the optical phonons of high-quality bulk ZnO has been systematically studied by means of Raman scattering. We report the observation of quasi-TO and quasi-LO modes for propagation directions covering the whole a-c mixing plane using a beveled ZnO single crystal sample. Scattering experiments performed in two different configuration geometries indicate that birefringence effects are not relevant for the phonon analysis in this material. The observed angular dependence of the quasimode frequencies is in good agreement with Loudon's model.

  6. Properties of Mn-doped ZnO nanopowder

    Energy Technology Data Exchange (ETDEWEB)

    Schlenker, E.; Bakin, A.; Wehmann, H.H.; Al-Suleiman, M.; Waag, A. [Technical University Braunschweig, Institute of Semiconductor Technology, Braunschweig (Germany); Schmid, H.; Mader, W. [Universitaet Bonn, Institut fuer Anorganische Chemie, Bonn (Germany); Bremers, H.; Hangleiter, A. [Technical University Braunschweig, Institute of Applied Physics, Braunschweig (Germany); Luedke, J.; Albrecht, M. [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany)

    2008-06-15

    The structural and magnetic properties of Mn-doped ZnO nanopowder are investigated and compared to undoped ZnO crystals. Mn incorporation leads to an increase in the lattice constants as revealed by X-ray diffraction measurements. An inhomogeneous distribution of the Mn atoms within the nanopowder was detected by energy-dispersive X-ray and electron-energy-loss spectroscopy measurements. Magnetic features are investigated by means of SQUID magnetometry on ensembles of powder particles as well as by magnetic force microscopy to study the behavior of single grains. (orig.)

  7. Hydrogen-Induced Plastic Deformation in ZnO

    Science.gov (United States)

    Lukáč, F.; Čížek, J.; Vlček, M.; Procházka, I.; Anwand, W.; Brauer, G.; Traeger, F.; Rogalla, D.; Becker, H.-W.

    In the present work hydrothermally grown ZnO single crystals covered with Pd over-layer were electrochemically loaded with hydrogen and the influence of hydrogen on ZnO micro structure was investigated by positron annihilation spectroscopy (PAS). Nuclear reaction analysis (NRA) was employed for determination of depth profile of hydrogen concentration in the sample. NRA measurements confirmed that a substantial amount of hydrogen was introduced into ZnO by electrochemical charging. The bulk hydrogen concentration in ZnO determined by NRA agrees well with the concentration estimated from the transported charge using the Faraday's law. Moreover, a subsurface region with enhanced hydrogen concentration was found in the loaded crystals. Slow positron implantation spectroscopy (SPIS) investigations of hydrogen-loaded crystal revealed enhanced concentration of defects in the subsurface region. This testifies hydrogen-induced plastic deformation of the loaded crystal. Absorbed hydrogen causes a significant lattice expansion. At low hydrogen concentrations this expansion is accommodated by elastic straining, but at higher concentrations hydrogen-induced stress exceeds the yield stress in ZnO and plastic deformation of the loaded crystal takes place. Enhanced hydrogen concentration detected in the subsurface region by NRA is, therefore, due to excess hydrogen trapped at open volume defects introduced by plastic deformation. Moreover, it was found that hydrogen-induced plastic deformation in the subsurface layer leads to typical surface modification: formation of hexagonal shape pyramids on the surface due to hydrogen-induced slip in the [0001] direction.

  8. Fabrication and Characterization of Vertically Aligned ZnO Nanorod Arrays via Inverted Monolayer Colloidal Crystals Mask

    Science.gov (United States)

    Chen, Cheng; Ding, Taotao; Qi, Zhiqiang; Zhang, Wei; Zhang, Jun; Xu, Juan; Chen, Jingwen; Dai, Jiangnan; Chen, Changqing

    2018-04-01

    The periodically ordered ZnO nanorod (NR) arrays have been successfully synthesized via a hydrothermal approach on the silicon substrates by templating of the TiO2 ring deriving from the polystyrene (PS) nanosphere monolayer colloidal crystals (MCC). With the inverted MCC mask, sol-gel-derived ZnO seeds could serve as the periodic nucleation positions for the site-specific growth of ZnO NRs. The large-scale patterned arrays of single ZnO NR with good side-orientation can be readily produced. According to the experimental results, the as-integrated ZnO NR arrays showed an excellent crystal quality and optical property, very suitable for optoelectronic applications such as stimulated emitters and ZnO photonic crystal devices.

  9. Electrical anisotropy properties of ZnO nanorods analyzed by conductive atomic force microscopy

    International Nuclear Information System (INIS)

    Wu Yunfeng; Yu Naisen; Liu Dongping; He Yangyang; Liu Yuanda; Liang Hongwei; Du Guotong

    2013-01-01

    Highlights: ► The electrical properties of one individual lying ZnO nanorod were performed by C-AFM measurement. ► Inhomogeneous spatial current distribution was detected. ► Current was detected along the side facets while no current was detected in the top plane for ZnO nanorod. ► The side facets were more conductive than the top facets of ZnO nanorods. - Abstract: In this study, we have prepared ZnO nanorods on cracked GaN substrates using aqueous solution method. Unique electrical characterization of one individual lying ZnO nanorod is analyzed by conductive atomic force microscopy (C-AFM). Effect of anisotropy properties on the conductivity of a single nanorod has been investigated. The current maps of ZnO nanorods have been simultaneously recorded with the topography which is gained by AFM-contact mode. The C-AFM measurement present local current–voltage (I–V) characteristics of the side facets of one individual lying nanorod, however, no current is detected on the top facets of ZnO nanorods. Measurement results indicate that the side facets are more electrically active than the top facets of ZnO nanorods due to lower Schottky barrier height of the side facets.

  10. Photoelectrocatalytic activity of a hydrothermally grown branched Zno nanorod-array electrode for paracetamol degradation.

    Science.gov (United States)

    Lin, Chin Jung; Liao, Shu-Jun; Kao, Li-Cheng; Liou, Sofia Ya Hsuan

    2015-06-30

    Hierarchical branched ZnO nanorod (B-ZnR) arrays as an electrode for efficient photoelectrocatalytic degradation of paracetamol were grown on fluorine-doped tin oxide substrates using a solution route. The morphologic and structural studies show the ZnO trunks are single-crystalline hexagonal wurtzite ZnO with a [0001] growth direction and are densely covered by c-axis-oriented ZnO branches. The obvious enhancement in photocurrent response of the B-ZnR electrode was obtained than that in the ZnO nanoparticle (ZnO NP) electrode. For the photoelectrocatalytic degradation of paracetamol in 20 h, the conversion fraction of the drug increased from 32% over ZnO NP electrode to 62% over B-ZnR arrays with about 3-fold increase in initial reaction rate. The light intensity-dependent photoelectrocatalytic experiment indicated that the superior performance over the B-ZnR electrode was mainly ascribed to the increased specific surface area without significantly sacrificing the charge transport and pollutant diffusion efficiencies. Two aromatic intermediate compounds were observed and eventually converted into harmless carboxylic acids and ammonia. Hierarchical tree-like ZnO arrays can be considered effective alternatives to improve photoelectro degradation rates without the need for expensive additives. Copyright © 2015 Elsevier B.V. All rights reserved.

  11. From Stable ZnO and GaN Clusters to Novel Double Bubbles and Frameworks

    Directory of Open Access Journals (Sweden)

    Matthew R. Farrow

    2014-05-01

    Full Text Available A bottom up approach is employed in the design of novel materials: first, gas-phase “double bubble” clusters are constructed from high symmetry, Th, 24 and 96 atom, single bubbles of ZnO and GaN. These are used to construct bulk frameworks. Upon geometry optimization—minimisation of energies and forces computed using density functional theory—the symmetry of the double bubble clusters is reduced to either C1 or C2, and the average bond lengths for the outer bubbles are 1.9 Å, whereas the average bonds for the inner bubble are larger for ZnO than for GaN; 2.0 Å and 1.9 Å, respectively. A careful analysis of the bond distributions reveals that the inter-bubble bonds are bi-modal, and that there is a greater distortion for ZnO. Similar bond distributions are found for the corresponding frameworks. The distortion of the ZnO double bubble is found to be related to the increased flexibility of the outer bubble when composed of ZnO rather than GaN, which is reflected in their bulk moduli. The energetics suggest that (ZnO12@(GaN48 is more stable both in gas phase and bulk frameworks than (ZnO12@(ZnO48 and (GaN12@(GaN48. Formation enthalpies are similar to those found for carbon fullerenes.

  12. On quantum efficiency of photoluminescence in ZnO layers and nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Reshchikov, M.A., E-mail: mreshchi@vcu.ed [Physics Department, Virginia Commonwealth University, 701 W. Grace St., Richmond, VA 23284 (United States); El-Shaer, A.; Behrends, A.; Bakin, A.; Waag, A. [Institute of Semiconductor Technology, Technical University of Braunschweig, Braunschweig D-38106 (Germany)

    2009-12-15

    In this work we studied PL in ZnO layers and nanostructures, including ZnO homoepitaxial layers on ZnO substrate and ZnO-Zn{sub 1-x}Mg{sub x}O single quantum well (SQW) structures grown on sapphire substrates by MBE, and ZnO nanowires grown on sapphire by MOCVD. The external quantum efficiency (QE) of PL in O-face ZnO layers exceeded that in Zn-face ZnO layers by two orders of magnitude at low temperatures. In a sample with SQW the combined external QE from the 4.6-nm-wide SQW and 50-nm-thick Zn{sub 1-x}Mg{sub x}O barriers achieved 28% at 15 K. The highest external QE was observed in one of the samples with ZnO nanowires-52% at 15 K and 2% at 300 K. Contribution of defect-related PL bands in ZnO nanowires samples was extremely low.

  13. ZnO Film Photocatalysts

    Directory of Open Access Journals (Sweden)

    Bosi Yin

    2014-01-01

    Full Text Available We have synthesized high-quality, nanoscale ultrathin ZnO films at relatively low temperature using a facile and effective hydrothermal approach. ZnO films were characterized by scanning electron microscope (SEM, X-ray diffraction (XRD, Raman spectroscopy, photoluminescence spectra (PL, and UV-vis absorption spectroscopy. The products demonstrated 95% photodegradation efficiency with Congo red (CR after 40 min irradiation. The photocatalytic degradation experiments of methyl orange (MO and eosin red also were carried out. The results indicate that the as-obtained ZnO films might be promising candidates as the excellent photocatalysts for elimination of waste water.

  14. Synthesis and characterization of ZnO and Ni doped ZnO nanorods by thermal decomposition method for spintronics application

    International Nuclear Information System (INIS)

    Saravanan, R.; Santhi, Kalavathy; Sivakumar, N.; Narayanan, V.; Stephen, A.

    2012-01-01

    Zinc oxide nanorods and diluted magnetic semiconducting Ni doped ZnO nanorods were prepared by thermal decomposition method. This method is simple and cost effective. The decomposition temperature of acetate and formation of oxide were determined by TGA before the actual synthesis process. The X-ray diffraction result indicates the single phase hexagonal structure of zinc oxide. The transmission electron microscopy and scanning electron microscopy images show rod like structure of ZnO and Ni doped ZnO samples with the diameter ∼ 35 nm and the length in few micrometers. The surface analysis was performed using X-ray photoelectron spectroscopic studies. The Ni doped ZnO exhibits room temperature ferromagnetism. This diluted magnetic semiconducting Ni doped ZnO nanorods finds its application in spintronics. - Highlights: ► The method used is very simple and cost effective compared to all other methods for the preparation DMS materials. ► ZnO and Ni doped ZnO nanorods ► Ferromagnetism at room temperature

  15. Structural, optical and magnetic characterization of Ru doped ZnO nanorods

    International Nuclear Information System (INIS)

    Kumar, Sanjeev; Kaur, Palvinder; Chen, C.L.; Thangavel, R.; Dong, C.L.; Ho, Y.K.; Lee, J.F.; Chan, T.S.; Chen, T.K.; Mok, B.H.; Rao, S.M.; Wu, M.K.

    2014-01-01

    Graphical abstract: Ruthenium (Ru = 0%, 1% and 2%) doped nano-crystalline zinc oxide (ZnO) nanorods were synthesized by using well-known sol–gel technique. X-ray diffraction (XRD) results show that Ru (0%, 1% and 2%) doped ZnO nanorods crystallized in the wurtzite structure having space group C 3v (P6 3 mc). Williamson and Hall plot reveal that in the nanoscale dimensions, incorporation of Ru induced the tensile strain in ZnO host matrix. Photoluminescence (PL) and Raman studies of Ru doped ZnO nanorods show the formation of singly ionized oxygen vacancies which may account for the observed room temperature ferromagnetism (RTFM) in 2% Ru doped ZnO. X-ray absorption spectroscopy (XAS) reveals that Ru replace the Zn atoms in the host lattice and maintain the crystal symmetry with slightly lattice distortion. Highlights: • Ru doped ZnO nanorods crystallized in the wurtzite structure having space group C 3v (P6 3 mc). • PL and Raman studies show the formation of singly ionized oxygen vacancies in 2% Ru doped ZnO. • XAS reveals that Ru replace the Zn atoms in the host lattice with slightly lattice distortion. • Doping of Ru in ZnO nanostructures gives rise to RTFM ordering. -- Abstract: Ruthenium (Ru = 0%, 1% and 2%) doped nano-crystalline zinc oxide (ZnO) nanorods were synthesized by using well-known sol–gel technique. X-ray diffraction (XRD) results show that Ru (0%, 1% and 2%) doped ZnO nanorods crystallized in the wurtzite structure having space group C 3v (P6 3 mc). Williamson and Hall plot reveal that in the nanoscale dimensions, incorporation of Ru induced the tensile strain in ZnO host matrix. Photoluminescence (PL) and Raman studies of Ru doped ZnO nanorods show the formation of singly ionized oxygen vacancies which may account for the observed room temperature ferromagnetism (RTFM) in 2% Ru doped ZnO. X-ray absorption spectroscopy (XAS) reveals that Ru replace the Zn atoms in the host lattice and maintain the crystal symmetry with slightly lattice

  16. Synthesis, characterization and optical properties of sheet-like ZnO

    International Nuclear Information System (INIS)

    Liu, Changzhen; Meng, Dawei; Wu, Xiuling; Wang, Yongqian; Yu, Xiaohong; Zhang, Zhengjie; Liu, Xiaoyang

    2011-01-01

    Highlights: → Sheet-like ZnO with regular hexagon shape was synthesized with a two-step method. → Sheet-like ZnO predecessor was synthesized at low temperature in open system. → The diameter and thickness of ZnO sheet can be controlled conveniently. → This low-cost and environmentally benign approach is controllable and reproducible. → Sheet-like ZnO may have potential application in optical and electrical devices. -- Abstract: Sheet-like ZnO with regular hexagon shape and uniform diameter has been successfully synthesized through a two-step method without any metal catalyst. First, the sheet-like ZnO precursor was synthesized in a weak alkaline carbamide environment with stirring in a constant temperature water-bath by the homogeneous precipitation method, then sheet-like ZnO was obtained by calcining at 600 o C for 2 h. The structures and optical properties of sheet-like ZnO have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), photoluminescence (PL) and UV-vis-NIR spectrophotometer. The results reveal that the product is highly crystalline with hexagonal wurtzite phase and has appearance of hexagon at (0 0 0 1) plane. The HRTEM images confirm that the individual sheet-like ZnO is single crystal. The PL spectrum exhibits a narrow ultraviolet emission at 397 nm and a broad visible emission centering at 502 nm. The band gap of sheet-like ZnO is about 3.15 eV.

  17. Young's modulus of individual ZnO nanowires

    International Nuclear Information System (INIS)

    Jiang, Dayong; Tian, Chunguang; Liu, Qingfei; Zhao, Man; Qin, Jieming; Hou, Jianhua; Gao, Shang; Liang, Qingcheng; Zhao, Jianxun

    2014-01-01

    We used a contact-mode atomic force microscopy (AFM) to study the mechanical properties of an individual ZnO nanowire in the open air. It is noteworthy that the Young's modulus can be determined by an AFM tip compressing a single nanowire on a rigid substrate, which can bring more repeatability and accuracy for the measurements. In particular, the calculated radial Young's modulus of ZnO nanowires is consistent with the data of ZnO bulks and thin films. We also present the Young's modulus with different diameters, and all these are discussed deeply

  18. Atomic Layer Deposition of Nickel on ZnO Nanowire Arrays for High-Performance Supercapacitors.

    Science.gov (United States)

    Ren, Qing-Hua; Zhang, Yan; Lu, Hong-Liang; Wang, Yong-Ping; Liu, Wen-Jun; Ji, Xin-Ming; Devi, Anjana; Jiang, An-Quan; Zhang, David Wei

    2018-01-10

    A novel hybrid core-shell structure of ZnO nanowires (NWs)/Ni as a pseudocapacitor electrode was successfully fabricated by atomic layer deposition of a nickel shell, and its capacitive performance was systemically investigated. Transmission electron microscopy and X-ray photoelectron spectroscopy results indicated that the NiO was formed at the interface between ZnO and Ni where the Ni was oxidized by ZnO during the ALD of the Ni layer. Electrochemical measurement results revealed that the Ti/ZnO NWs/Ni (1500 cycles) electrode with a 30 nm thick Ni-NiO shell layer had the best supercapacitor properties including ultrahigh specific capacitance (∼2440 F g -1 ), good rate capability (80.5%) under high current charge-discharge conditions, and a relatively better cycling stability (86.7% of the initial value remained after 750 cycles at 10 A g -1 ). These attractive capacitive behaviors are mainly attributed to the unique core-shell structure and the combined effect of ZnO NW arrays as short charge transfer pathways for ion diffusion and electron transfer as well as conductive Ni serving as channel for the fast electron transport to Ti substrate. This high-performance Ti/ZnO NWs/Ni hybrid structure is expected to be one of a promising electrodes for high-performance supercapacitor applications.

  19. A Comparative Study on Structural and Optical Properties of ZnO Micro-Nanorod Arrays Grown on Seed Layers Using Chemical Bath Deposition and Spin Coating Methods

    Directory of Open Access Journals (Sweden)

    Sibel MORKOÇ KARADENİZ

    2016-11-01

    Full Text Available In this study, Zinc Oxide (ZnO seed layers were prepared on Indium Tin Oxide (ITO substrates by using Chemical Bath Deposition (CBD method and Sol-gel Spin Coating (SC method. ZnO micro-nanorod arrays were grown on ZnO seed layers by using Hydrothermal Synthesis method. Seed layer effects of structural and optical properties of ZnO arrays were characterized. X-ray diffractometer (XRD, Scanning Electron Microscopy (SEM and Ultraviolet Visible (UV-Vis Spectrometer were used for analyses. ZnO micro-nanorod arrays consisted of a single crystalline wurtzite ZnO structure for each seed layer. Besides, ZnO rod arrays were grown smoothly and vertically on SC seed layer, while ZnO rod arrays were grown randomly and flower like structures on CBD seed layer. The optical absorbance peaks found at 422 nm wavelength in the visible region for both ZnO arrays. Optical bandgap values were determined by using UV-Vis measurements at 3.12 and 3.15 eV for ZnO micro-nanorod arrays on CBD seed layer and for ZnO micro-nanorod arrays on SC-seed layer respectively.DOI: http://dx.doi.org/10.5755/j01.ms.22.4.13443

  20. Investigation of some physical properties of ZnO nanofilms synthesized by micro-droplet technique

    Directory of Open Access Journals (Sweden)

    N. Hamzaoui

    Full Text Available In this paper, ZnO nanocrystals were synthesized using a simple micro-droplets technique from a solution prepared by dissolving zinc acetate di-hydrate [Zn(CH3COO2, 2H2O] in methanol. Microdroplets were deposited on glass substrates heated at 100 °C, the obtained samples of ZnO films were investigated by XRD, AES, AFM, ellipsometry and PL. XRD patterns reveal the wurtzite structure of ZnO where the lattice parameters a and c, calculated from XRD signals, show a nanometric character of ZnO nanoparticles. The chemical composition of ZnO film surfaces was verified by Auger electron spectroscopy (AES. From Auger signals, oxygen (O-KLL and zinc (Zn-LMM Auger transitions indicate well the presence of Zn-O bonding. The surface topography of the samples was measured by atomic force microscopy (AFM where ZnO nanoparticles of average size ranging between 20 and 80 nm were determined. Some optical properties as dielectric constants, refractive index, extinction coefficient as well as the optical band gap were determined from ellipsometry analysis. The dispersion of the refractive index was discussed in terms of both Cauchy parameters and Wemple & Di-Dominico single oscillator model. The photoluminescence (PL measurements exhibited two emission peaks. The first at 338 nm, corresponding to the band gap of ZnO, is due to excitonic emission while the second around 400 nm, is attributed to the single ionized oxygen vacancies. Keywords: ZnO nanoparticles, Micro droplets technique, AFM, Auger spectroscopy, Ellipsometry, Photoluminescence (PL

  1. Synthesis and optical study of heat-treated ZnO nanopowder for ...

    Indian Academy of Sciences (India)

    In this research article synthesis of ZnO nanopowder is presented by a ... samples in terms of crystalline structure, optical properties and perhaps most ... C for different times (4, 6, 8, 10 and. 12 h). ... were performed by θ/2θ scans in the 2θ angular range of 20–95 .... pure and good quality single-phase wurtzite ZnO nano-.

  2. High performance non-volatile ferroelectric copolymer memory based on a ZnO nanowire transistor fabricated on a transparent substrate

    International Nuclear Information System (INIS)

    Nedic, Stanko; Welland, Mark; Tea Chun, Young; Chu, Daping; Hong, Woong-Ki

    2014-01-01

    A high performance ferroelectric non-volatile memory device based on a top-gate ZnO nanowire (NW) transistor fabricated on a glass substrate is demonstrated. The ZnO NW channel was spin-coated with a poly (vinylidenefluoride-co-trifluoroethylene) (P(VDF-TrFE)) layer acting as a top-gate dielectric without buffer layer. Electrical conductance modulation and memory hysteresis are achieved by a gate electric field induced reversible electrical polarization switching of the P(VDF-TrFE) thin film. Furthermore, the fabricated device exhibits a memory window of ∼16.5 V, a high drain current on/off ratio of ∼10 5 , a gate leakage current below ∼300 pA, and excellent retention characteristics for over 10 4 s

  3. ZnO synthesized in air by fs laser irradiation on metallic Zn thin films

    Science.gov (United States)

    Esqueda-Barrón, Y.; Herrera, M.; Camacho-López, S.

    2018-05-01

    We present results on rapid femtosecond laser synthesis of nanostructured ZnO. We used metallic Zn thin films to laser scan along straight tracks, until forming nanostructured ZnO. The synthesis dependence on laser irradiation parameters such as the per pulse fluence, integrated fluence, laser scan speed, and number of scans were explored carefully. SEM characterization showed that the morphology of the obtained ZnO is dictated by the integrated fluence and the laser scan speed; micro Raman and XRD results allowed to identify optimal laser processing conditions for getting good quality ZnO; and cathodoluminescence measurements demonstrated that a single laser scan at high per pulse laser fluence, but a medium integrated laser fluence and a medium laser scan speed favors a low density of point-defects in the lattice. Electrical measurements showed a correlation between resistivity of the laser produced ZnO and point-defects created during the synthesis. Transmittance measurements showed that, the synthesized ZnO can reach down to the supporting fused silica substrate under the right laser irradiation conditions. The physical mechanism for the formation of ZnO, under ultrashort pulse laser irradiation, is discussed in view of the distinct times scales given by the laser pulse duration and the laser pulse repetition rate.

  4. Performance of natural-dye-sensitized solar cells by ZnO nanorod and nanowall enhanced photoelectrodes

    Directory of Open Access Journals (Sweden)

    Saif Saadaoui

    2017-01-01

    Full Text Available In this work, two natural dyes extracted from henna and mallow plants with a maximum absorbance at 665 nm were studied and used as sensitizers in the fabrication of dye-sensitized solar cells (DSSCs. Fourier transform infrared (FTIR spectra of the extract revealed the presence of anchoring groups and coloring constituents. Two different structures were prepared by chemical bath deposition (CBD using zinc oxide (ZnO layers to obtain ZnO nanowall (NW or nanorod (NR layers employed as a thin film at the photoanode side of the DSSC. The ZnO layers were annealed at different temperatures under various gas sources. Indeed, the forming gas (FG (N2/H2 95:5 was found to enhance the conductivity by a factor of 103 compared to nitrogen (N2 or oxygen (O2 annealing gas. The NR width varied between 40 and 100 nm and the length from 500 to 1000 nm, depending on the growth time. The obtained NWs had a length of 850 nm. The properties of the developed ZnO NW and NR layers with different thicknesses and their effect on the photovoltaic parameters were studied. An internal coverage of the ZnO NWs was also applied by the deposition of a thin TiO2 layer by reactive sputtering to improve the cell performance. The application of this layer increased the overall short circuit current Jsc by seven times from 2.45 × 10−3 mA/cm2 to 1.70 × 10−2 mA /cm2.

  5. AD1995: NW Europe's hydrocarbon industry

    International Nuclear Information System (INIS)

    Glennie, K.; Hurst, A.

    1996-01-01

    This volume concerns itself with wide-ranging aspects of the upstream hydro-carbon industry over the whole of NW Europe. As such, the book contrasts with many thematic volumes by presenting a broad range of topics side-by-side. One section of the book looks back at the history of geological exploration and production, and provides an overview of hydrocarbon exploration across NW Europe. Another section covers the state of the art in hydrocarbon exploration and production. This includes an update on computer-based basin modelling overpressure systems, innovations in reservoir engineering and reserve estimation, 3D seismic and the geochemical aspects of secondary migration. The final section of the book takes a look into the future. This covers the remaining hydrocarbon resources of the North Sea, managing risk in oil field development, oil field economics, and pollution and the environment. It is the editors' hope that several key areas of NW Europe's upstream oil industry have been usefully summarized in the volume. (Author)

  6. Analysis on the energetics, magnetism and electronic properties in a 45° ZnO grain boundary doped with Gd

    KAUST Repository

    Devi, Assa Aravindh Sasikala; Roqan, Iman S.

    2018-01-01

    The structural stability and magnetic properties of a grain boundary (GB) formed by aligning two ZnO single crystals oriented at an angle of 45° is investigated by density functional theory, using generalized gradient approximation (GGA) and taking

  7. Shape- and size-controlled synthesis of nanometre ZnO from a simple solution route at room temperature

    International Nuclear Information System (INIS)

    Cao, H L; Qian, X F; Gong, Q; Du, W M; Ma, X D; Zhu, Z K

    2006-01-01

    Single crystalline ZnO nanorods with a diameter of about 5 nm were synthesized without the presence of any surfactants in ethanol solvent at room temperature. Nanodots and nanorods with different size and shape could be observed by TEM via simply altering NaOH concentration and reaction time. The polar ZnO nanorod growth mechanism was discussed by the 'Ostwald ripening' mechanism. Optical absorption and photoluminescence properties of ZnO nanorods have been characterized. The UV absorption spectrum revealed a clear blue-shift with a single absorption peak centred at 350 nm

  8. ZnO nanostructures induced by microwave plasma

    Directory of Open Access Journals (Sweden)

    Khaled A. Elsayed

    2015-07-01

    Full Text Available Microwave induced hydrogen plasma is used to fabricate ZnO thin films at low ambient gas pressure and controlled oxygen content in the gas mixture. The emission spectra have been observed. Optical emission spectroscopy was used to identify the chemical reaction mechanism. Structural quality of the so-obtained nanoparticles was studied by X-ray diffraction (XRD and high resolution scanning electron microscopy (SEM. SEM results showed that nanorods were formed in the process, and XRD results along with nanorod dimensions obtained from SEM are consistent with the formation of single and poly-crystalline ZnO nanorods. The alignment of these nanorods with respect to the substrates depends on the lattice mismatch between ZnO and the glass substrate. The minimum crystallite grain size as obtained from the SEM measurements was ∼24 nm and the average diameter is 70 nm with a length of 1–2 μm. The deposited ZnO thin films have a wide energy band gap that equals ∼3 eV.

  9. Characterization of Mn doped ZnO nanopowder

    Energy Technology Data Exchange (ETDEWEB)

    Schlenker, Eva; Bakin, Andrey; Al-Suleiman, Mohamed; Wehmann, Hergo-Heinrich; Waag, Andreas [Institute of Semiconductor Technology, TU Braunschweig (Germany); Schmid, Herbert; Mader, Werner [Institute for Inorganic Chemistry, University Bonn (Germany); Bremers, Heiko; Hangleiter, Andreas [Institute of Applied Physics, TU Braunschweig (Germany)

    2008-07-01

    In the quest of materials for spintronic applications, diluted magnetic semiconductors recently attracted much attention. The main challenge is finding a ferromagnetic material with Curie temperature T{sub c}>300 K whose magnetic properties can be controlled electrically. The interest was particularly focused on Zn(TM)O since theoretical calculations predict that ZnO containing Mn could exhibit ferromagnetism with T{sub c} above room temperature. In the present study, the structural and magnetic properties of Mn doped ZnO nanopowder are investigated and compared to undoped ZnO crystals. Doping of ZnO with Mn results in increased lattice constants as revealed by XRD. However, an inhomogeneous distribution of the Mn dopants within the nanopowder was revealed by energy-dispersive X-ray and electron energy-loss spectroscopy. Magnetic properties are investigated by means of SQUID measurements on aggregates of powder particles as well as by MFM to study the behavior of single grains. The MFM image differs significantly from the topography as imaged by AFM and suggests the existence of long-ranging magnetic signals emerging from the sample.

  10. Electrical properties of ZnO nanorods and layers

    Energy Technology Data Exchange (ETDEWEB)

    Schlenker, Eva; Bakin, Andrey; Peters, Ole; Mofor, Augustine C.; Postels, Bianca; El-Shaer, Hamid; Wehmann, Hergo-Heinrich; Waag, Andreas [Institut fuer Halbleitertechnik, TU Braunschweig (Germany); Weimann, Thomas; Hinze, Peter [Physikalisch-Technische Bundesanstalt (PTB), Braunschweig (Germany)

    2007-07-01

    ZnO has attracted a lot of interest in the scientific community due to its outstanding properties. With a band gap of 3.37 eV and an exciton binding energy of 60 meV it is a promising candidate for micro- and optoelectronic applications. The growth of ZnO nanostructures and epitaxial layers is well under control and their optical and structural properties are already thoroughly characterized. However, due to contacting difficulties, less reports exist on the electrical properties of single ZnO nanostructures. In this contribution we present various contacting methods in order to explore the electrical properties of individual nanorods either grown by aqueous chemical growth or vapor phase transport. Current-Voltage characteristics were obtained by using an atomic force microscope with a conductive tip or by patterning contacts with e-beam lithography. The results are compared to the ones obtained from measurements on epitaxially grown ZnO layers and first applications are presented.

  11. Ultraviolet photosensors fabricated with Ag nanowires coated with ZnO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Shen, Guan-Hung [Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Hong, Franklin Chau-Nan, E-mail: hong@mail.ncku.edu.tw [Department of Chemical Engineering, National Cheng Kung University, Tainan 70101, Taiwan (China); Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan 70101, Taiwan (China); Center for Micro/Nano Science and Technology, National Cheng Kung University, Tainan 70101, Taiwan (China); NCKU Research Center for Energy Technology and Strategy, National Cheng Kung University, Tainan 70101, Taiwan (China)

    2014-11-03

    We have developed a simple low temperature process to coat zinc oxide (ZnO) nanoparticles (NPs) on Ag nanowires (NWs) with well-controlled morphology. Triethanolamine (TEA) was employed to react with zinc acetate (Zn(CH{sub 3}COO){sub 2}) forming ZnO NPs. TEA was also found to enhance the nucleation and binding of ZnO NPs on the Ag nanowire surfaces facilitating a complete coverage of Ag nanowire surfaces with ZnO NPs. The effects of the process parameters including reaction time and reaction temperature were studied. The surfaces of 60 nm diameter Ag NWs could be completely covered with ZnO NPs with the final diameters of Ag-NWs@ZnO (core–shell NWs) turning into the range from 100 nm to 450 nm. The Ag-NWs@ZnO was characterized by scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray mapping analysis, X-ray diffraction, and photoluminescence spectra. Finally, ultraviolet (UV) photosensors were fabricated using Ag-NWs@ZnO. They were found to improve photosensitivity with greatly enhanced fast response by reducing the recovery time by 2 orders, in comparison with the UV-sensors using single-crystalline ZnO NWs. - Highlights: • Solution process to coat ZnO nanoparticles on Ag nanowires has been developed. • Ultraviolet photosensing of ZnO nanoparticles coated on the Ag nanowires was found. • High defect concentration of ZnO nanoparticles enhanced the photosensing properties.

  12. Growth of ZnO nanowire arrays directly onto Si via substrate topographical adjustments using both wet chemical and dry etching methods

    Energy Technology Data Exchange (ETDEWEB)

    Smith, Nathan A., E-mail: 523615@swansea.ac.uk [Centre for Nanohealth, Department of Physics, College of Science, University of Swansea, Singleton Park SA2 8PP United Kingdom (United Kingdom); Evans, Jon E.; Jones, Daniel R. [Multidisciplinary Nanotechnology Centre, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom (United Kingdom); Lord, Alex M. [Centre for Nanohealth, College of Engineering, University of Swansea, Singleton Park, SA2 8PP United Kingdom (United Kingdom); Wilks, S.P. [Centre for Nanohealth, Department of Physics, College of Science, University of Swansea, Singleton Park SA2 8PP United Kingdom (United Kingdom)

    2015-03-15

    Highlights: • Arrays of catalyst-free ZnO NWs have been grown by CVD without seed layers on Si. • Si surface topography was altered by substrate etching, resulting in NW growth. • XPS analysis shows growth is related to topography and not surface contamination. • Using e-beam lithography with etching, selective nanowire growth is demonstrated. • Electrical measurements on the arrays show improved conduction through the Si. - Abstract: Arrays of CVD catalyst-free ZnO nanowires have been successfully grown without the use of seed layers, using both wet chemical and dry plasma etching methods to alter surface topography. XPS analysis indicates that the NW growth cannot be attributed to a substrate surface chemistry and is therefore directly related to the substrate topography. These nanowires demonstrate structural and optical properties typical of CVD ZnO nanowires. Moreover, the NW arrays exhibit a degree of vertical alignment of less than 20° from the substrate normal. Electrical measurements suggest an improved conduction path through the substrate over seed layer grown nanowires. Furthermore, the etching technique was combined with e-beam lithography to produce high resolution selective area nanowire growth. The ability to pattern uniform nanowires using mature dry etch technology coupled with the increased charge transport through the substrate demonstrates the potential of this technique in the vertical integration of nanowire arrays.

  13. Three-dimensional mesoscale heterostructures of ZnO nanowire arrays epitaxially grown on CuGaO2 nanoplates as individual diodes.

    Science.gov (United States)

    Forticaux, Audrey; Hacialioglu, Salih; DeGrave, John P; Dziedzic, Rafal; Jin, Song

    2013-09-24

    We report a three-dimensional (3D) mesoscale heterostructure composed of one-dimensional (1D) nanowire (NW) arrays epitaxially grown on two-dimensional (2D) nanoplates. Specifically, three facile syntheses are developed to assemble vertical ZnO NWs on CuGaO2 (CGO) nanoplates in mild aqueous solution conditions. The key to the successful 3D mesoscale integration is the preferential nucleation and heteroepitaxial growth of ZnO NWs on the CGO nanoplates. Using transmission electron microscopy, heteroepitaxy was found between the basal planes of CGO nanoplates and ZnO NWs, which are their respective (001) crystallographic planes, by the observation of a hexagonal Moiré fringes pattern resulting from the slight mismatch between the c planes of ZnO and CGO. Careful analysis shows that this pattern can be described by a hexagonal supercell with a lattice parameter of almost exactly 11 and 12 times the a lattice constants for ZnO and CGO, respectively. The electrical properties of the individual CGO-ZnO mesoscale heterostructures were measured using a current-sensing atomic force microscopy setup to confirm the rectifying p-n diode behavior expected from the band alignment of p-type CGO and n-type ZnO wide band gap semiconductors. These 3D mesoscale heterostructures represent a new motif in nanoassembly for the integration of nanomaterials into functional devices with potential applications in electronics, photonics, and energy.

  14. Fabrication of a Combustion-Reacted High-Performance ZnO Electron Transport Layer with Silver Nanowire Electrodes for Organic Solar Cells.

    Science.gov (United States)

    Park, Minkyu; Lee, Sang-Hoon; Kim, Donghyuk; Kang, Juhoon; Lee, Jung-Yong; Han, Seung Min

    2018-02-28

    Herein, a new methodology for solution-processed ZnO fabrication on Ag nanowire network electrode via combustion reaction is reported, where the amount of heat emitted during combustion was minimized by controlling the reaction temperature to avoid damaging the underlying Ag nanowires. The degree of participation of acetylacetones, which are volatile fuels in the combustion reaction, was found to vary with the reaction temperature, as revealed by thermogravimetric and compositional analyses. An optimized processing temperature of 180 °C was chosen to successfully fabricate a combustion-reacted ZnO and Ag nanowire hybrid electrode with a sheet resistance of 30 Ω/sq and transmittance of 87%. A combustion-reacted ZnO on Ag nanowire hybrid structure was demonstrated as an efficient transparent electrode and electron transport layer for the PTB7-Th-based polymer solar cells. The superior electrical conductivity of combustion-reacted ZnO, compared to that of conventional sol-gel ZnO, increased the external quantum efficiency over the entire absorption range, whereas a unique light scattering effect due to the presence of nanopores in the combustion-derived ZnO further enhanced the external quantum efficiency in the 450-550 nm wavelength range. A power conversion efficiency of 8.48% was demonstrated for the PTB7-Th-based polymer solar cell with the use of a combustion-reacted ZnO/Ag NW hybrid transparent electrode.

  15. Synthesis of ZnO nanorod–nanosheet composite via facile hydrothermal method and their photocatalytic activities under visible-light irradiation

    Energy Technology Data Exchange (ETDEWEB)

    Tan, Wai Kian [Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580 (Japan); Abdul Razak, Khairunisak; Lockman, Zainovia [School of Materials and Mineral Resources, Universiti Sains Malaysia, Engineering Campus, 14300 Nibong Tebal, Pulau Pinang (Malaysia); Kawamura, Go; Muto, Hiroyuki [Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580 (Japan); Matsuda, Atsunori, E-mail: matsuda@ee.tut.ac.jp [Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Toyohashi, Aichi 441-8580 (Japan)

    2014-03-15

    ZnO composite films consisting of ZnO nanorods and nanosheets were prepared by low-temperature hydrothermal processing at 80 °C on seeded glass substrates. The seed layer was coated on glass substrates by sol–gel dip-coating and pre-heated at 300 °C for 10 min prior to hydrothermal growth. The size of the grain formed after pre-heat treatment was ∼40 nm. A preferred orientation seed layer at the c-axis was obtained, which promoted vertical growth of the ZnO nanorod arrays and formation of the ZnO nanosheets. X-ray diffraction patterns and high-resolution transmission electron microscope (HR-TEM) images confirmed that the ZnO nanorods and nanosheets consist of single crystalline and polycrystalline structures, respectively. Room temperature photoluminescence spectra of the ZnO nanorod–nanosheet composite films exhibited band-edge ultraviolet (UV) and visible emission (blue and green) indicating the formation of ZnO crystals with good crystallinity and are supported by Raman scattering results. The formation of one-dimensional (1D) ZnO nanorod arrays and two-dimensional (2D) ZnO nanosheet films using seeded substrates in a single low-temperature hydrothermal step would be beneficial for realization of device applications that utilize substrates with limited temperature stability. The ZnO nanorods and nanosheets composite structure demonstrated higher photocatalytic activity during degradation of aqueous methylene blue under visible-light irradiation. -- Graphical abstract: Schematic illustration of ZnO nanorod–nanosheet composite structure formation by hydrothermal at low-temperature of 80 °C against time. Highlights: • Novel simultaneous formation of ZnO nanorods and nanosheets composite structure. • Facile single hydrothermal step formation at low-temperature. • Photoluminescence showed ultraviolet and visible emission. • Feasible application on substrates with low temperature stability. • Improved photocatalytic activity under visible

  16. Transition metal implanted ZnO. A correlation between structure and magnetism

    Energy Technology Data Exchange (ETDEWEB)

    Zhou, Shengqiang

    2008-07-01

    Nowadays ferromagnetism is often found in potential diluted magnetic semiconductor systems. However, many authors question the origin of this ferromagnetism, i.e. if the observed ferromagnetism stems from ferromagnetic precipitates rather than from carriermediated magnetic coupling of ionic impurities, as required for a diluted magnetic semiconductor. In this thesis, this question will be answered for transition-metal implanted ZnO single crystals. Magnetic secondary phases, namely metallic Fe, Co and Ni nanocrystals, are formed inside ZnO. They are - although difficult to detect by common approaches of structural analysis - responsible for the observed ferromagnetism. Particularly Co and Ni nanocrystals are crystallographically oriented with respect to the ZnO matrix. Their structure phase transformation and corresponding evolution of magnetic properties upon annealing have been established. Finally, an approach, pre-annealing ZnO crystals at high temperature before implantation, has been demonstrated to sufficiently suppress the formation of metallic secondary phases. (orig.)

  17. Direct Heteroepitaxial Growth of ZnO over GaN Crystal in Aqueous Solution

    Science.gov (United States)

    Hamada, Takahiro; Ito, Akihiro; Nagao, Nobuaki; Suzuki, Nobuyasu; Fujii, Eiji; Tsujimura, Ayumu

    2013-04-01

    We report on the structural and electrical properties of ZnO films grown on surface-treated GaN/Al2O3 substrates by chemical bath deposition. X-ray diffraction analysis indicated that the ZnO films had a single-crystalline wurtzite structure with c-axis orientation. The ZnO film exhibited n-type conduction with a carrier concentration of 6.9 ×1018 cm-3, an electron mobility of 41 cm2/(V.s), and a resistivity of 2.2 ×10-2 Ω.cm. A low specific contact resistivity of 4.3 ×10-3 Ω.cm2 was obtained at the ZnO/n-GaN interface. Additionally, the ZnO film exhibited high transparency in the visible and infrared region.

  18. Electronic structure, magnetic and structural properties of Ni doped ZnO nanoparticles

    International Nuclear Information System (INIS)

    Kumar, Shalendra; Vats, Prashant; Gautam, S.; Gupta, V.P.; Verma, K.D.; Chae, K.H.; Hashim, Mohd; Choi, H.K.

    2014-01-01

    Highlights: • XRD, and HR-TEM results show the single phase nature of Ni doped ZnO nanoparticles. • dc magnetization results indicate the RT-FM in Ni doped ZnO nanoparticles. • Ni L 3,2 edge NEXAFS spectra infer that Ni ions are in +2 valence state. • O K edge NEXAFS spectra show that O vacancy increases with Ni doping in ZnO. - Abstract: We report structural, magnetic and electronic structural properties of Ni doped ZnO nanoparticles prepared by auto-combustion method. The prepared nanoparticles were characterized by using X-ray diffraction (XRD), high resolution transmission electron microscopy (HR-TEM), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, and dc magnetization measurements. The XRD and HR-TEM results indicate that Ni doped ZnO nanoparticles have single phase nature with wurtzite lattice and exclude the presence of secondary phase. NEXAFS measurements performed at Ni L 3,2 -edges indicates that Ni ions are in +2 valence state and exclude the presence of Ni metal clusters. O K-edge NEXAFS spectra indicate an increase in oxygen vacancies with Ni-doping, while Zn L 3,2 -edge show the absence of Zn-vacancies. The magnetization measurements performed at room temperature shows that pure and Ni doped ZnO exhibits ferromagnetic behavior

  19. Bulk ZnO: Current Status, Challenges, and Prospects

    Science.gov (United States)

    2009-04-01

    von Wenckstern, H. Schmidt, M. Lorenz, and M. Grundmann, “Defects in virgin and N+-implanted ZnO single crystals studied by positron annihilation...characterization, and device applications of semiconductor and complex oxide thin films. He is a co-author of more than 50 papers in referred...REPLACE THIS LINE WITH YOUR PAPER IDENTIFICATION NUMBER (DOUBLE-CLICK HERE TO EDIT) < 1 Abstract— Rediscovered in the last decade, zinc oxide

  20. Nanostructured ‘Anastacia’ flowers for Zn coating by electrodepositing ZnO at room temperature

    Energy Technology Data Exchange (ETDEWEB)

    Alves, Marta M., E-mail: martamalves@tecnico.ulisboa.pt [ICEMS Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais 1049-001, Lisboa (Portugal); Santos, Catarina F.; Carmezim, Maria J. [ICEMS Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais 1049-001, Lisboa (Portugal); EST Setúbal, DEM, Instituto Politécnico de Setúbal, Campus IPS, 2910 Setúbal (Portugal); Montemor, Maria F. [ICEMS Instituto Superior Técnico, Universidade de Lisboa, Av. Rovisco Pais 1049-001, Lisboa (Portugal)

    2015-03-30

    Graphical abstract: - Highlights: • Functional coating of Zn with ZnO ‘Anastacia’ flowers. • Flowers are composed by nano-hexagonal units of single-crystal wurtzite ZnO. • The growth mechanism of these flowers is discussed. • Room temperature yield cost-effective electrodeposited ZnO ‘Anastacia’ flowers. - Abstract: Functional coatings composed of ZnO, a new flowered structured denominated as ‘Anastacia’ flowers, were successfully obtained through a facile and green one-step electrodeposition approach on Zn substrate. Electrodeposition was performed at constant cathodic potential, in Zn(NO{sub 3}){sub 2} aqueous solution, at pH 6 and at room temperature. The resulting ZnO thin uniform layer, with an average thickness of 300 nm, bearing top 3D hierarchical nanostructures that compose ‘Anastacia’ flowers, was characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman. The results reveal a nano-architecture structure composed by nano-hexagonal units of single-crystal wurtzite ZnO structure with a [0 0 0 1] growth direction along the longitudinal particles axis. Other morphological features, sphere-like, rod-like and random distributed hexagons were also obtained by varying the electrodeposition time as observed by SEM. The Raman spectroscopy revealed the typical peak of ZnO wurtzite for all the obtained morphologies. Coatings wettability was studied and the different morphologies display distinct water contact angles with the ‘Anastacia’ flowers coating showing a wettability of 110°. These results pave the way for simple and low-cost routes for the production of novel functionalized coatings of ZnO over Zn, with potential for biomedical devices.

  1. Nanostructured ‘Anastacia’ flowers for Zn coating by electrodepositing ZnO at room temperature

    International Nuclear Information System (INIS)

    Alves, Marta M.; Santos, Catarina F.; Carmezim, Maria J.; Montemor, Maria F.

    2015-01-01

    Graphical abstract: - Highlights: • Functional coating of Zn with ZnO ‘Anastacia’ flowers. • Flowers are composed by nano-hexagonal units of single-crystal wurtzite ZnO. • The growth mechanism of these flowers is discussed. • Room temperature yield cost-effective electrodeposited ZnO ‘Anastacia’ flowers. - Abstract: Functional coatings composed of ZnO, a new flowered structured denominated as ‘Anastacia’ flowers, were successfully obtained through a facile and green one-step electrodeposition approach on Zn substrate. Electrodeposition was performed at constant cathodic potential, in Zn(NO 3 ) 2 aqueous solution, at pH 6 and at room temperature. The resulting ZnO thin uniform layer, with an average thickness of 300 nm, bearing top 3D hierarchical nanostructures that compose ‘Anastacia’ flowers, was characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM) and Raman. The results reveal a nano-architecture structure composed by nano-hexagonal units of single-crystal wurtzite ZnO structure with a [0 0 0 1] growth direction along the longitudinal particles axis. Other morphological features, sphere-like, rod-like and random distributed hexagons were also obtained by varying the electrodeposition time as observed by SEM. The Raman spectroscopy revealed the typical peak of ZnO wurtzite for all the obtained morphologies. Coatings wettability was studied and the different morphologies display distinct water contact angles with the ‘Anastacia’ flowers coating showing a wettability of 110°. These results pave the way for simple and low-cost routes for the production of novel functionalized coatings of ZnO over Zn, with potential for biomedical devices

  2. H{sub 2}O{sub 2}-molecular beam epitaxy of high quality ZnO

    Energy Technology Data Exchange (ETDEWEB)

    El Shaer, A.; Bakin, A.; Che Mofor, A.; Kreye, M.; Waag, A. [Technical University Braunschweig, Institute of Semiconductor Technology, Braunschweig (Germany); Blaesing, J.; Krost, A. [Otto-von-Guericke-University, Institute of Experimental Physics, Magdeburg (Germany); Stoimenos, J. [Aristotele University, Physics Department, Thessaloniki (Greece); Pecz, B. [Hungarian Academy of Sciences, Research Institute for Technical Physics and Materials Science, P.O. Box 49, Budapest (Hungary)

    2007-07-15

    We have studied the growth and characterization of ZnO epilayers on (0001)-sapphire by H{sub 2}O{sub 2}-molecular beam epitaxy (MBE). A high temperature (HT) MgO buffer followed by a low-temperature ZnO buffer was introduced in order to accommodate the lattice mismatch between ZnO and sapphire. The surface morphology of the samples was studied using atomic force microscopy (AFM), and scanning electron microscopy (SEM). The crystalline quality of the layers was investigated by employing high resolution X-ray diffractometry (HRXRD) and high resolution transmission electron microscopy (HRTEM). The electrical properties of the grown ZnO layers were studied by Hall-effect measurements in a standard van der Pauw configuration. The measured surface roughness for the best layers is as low as 0.26 nm rms. HRXRD measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO heteroepitaxially grown on (0001)-sapphire with a HT MgO buffer layers. The influence of the growth conditions on the crystalline quality is discussed. The FWHM of the HRXRD (0002) rocking curves measured for the 2-inch ZnO-on-sapphire is as low as 27 arcsec with a very high lateral homogeneity across the whole 2-inch ZnO epilayers. The results indicate that H{sub 2}O{sub 2}-MBE is a suitable technique to fabricate ZnO epilayers of very high quality. (orig.)

  3. Acceptors in ZnO

    Energy Technology Data Exchange (ETDEWEB)

    McCluskey, Matthew D., E-mail: mattmcc@wsu.edu; Corolewski, Caleb D.; Lv, Jinpeng; Tarun, Marianne C.; Teklemichael, Samuel T. [Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814 (United States); Walter, Eric D. [Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States); Norton, M. Grant; Harrison, Kale W. [School of Mechanical and Materials Engineering, Washington State University, Pullman, Washington 99164-2920 (United States); Ha, Su [Voiland School of Chemical Engineering and Bioengineering, Washington State University, Pullman, Washington 99164-6515 (United States)

    2015-03-21

    Zinc oxide (ZnO) has potential for a range of applications in the area of optoelectronics. The quest for p-type ZnO has focused much attention on acceptors. In this paper, Cu, N, and Li acceptor impurities are discussed. Experimental evidence indicates these point defects have acceptor levels 3.2, 1.4, and 0.8 eV above the valence-band maximum, respectively. The levels are deep because the ZnO valence band is quite low compared to conventional, non-oxide semiconductors. Using MoO{sub 2} contacts, the electrical resistivity of ZnO:Li was measured and showed behavior consistent with bulk hole conduction for temperatures above 400 K. A photoluminescence peak in ZnO nanocrystals is attributed to an acceptor, which may involve a Zn vacancy. High field (W-band) electron paramagnetic resonance measurements on the nanocrystals revealed an axial center with g{sub ⊥} = 2.0015 and g{sub //} = 2.0056, along with an isotropic center at g = 2.0035.

  4. Stimulated emission from ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Hauschild, R.; Lange, H.; Priller, H.; Klingshirn, C.; Kalt, H. [Institut fuer Angewandte Physik, Universitaet Karlsruhe (T.H.), 76128 Karlsruhe (Germany); Kling, R. [Abteilung Halbleiterphysik, Universitaet Ulm, Albert-Einstein Allee 45, 89081 Ulm (Germany); Waag, A. [Institut fuer Halbleitertechnik, TU-Braunschweig, H.-Sommer-Str. 66, 38106 Braunschweig (Germany); Fan, H.J.; Zacharias, M. [Max-Planck-Institut fuer Mikrostrukturphysik, Weinberg 2, 06120 Halle (Germany)

    2006-03-15

    By means of time resolved spectroscopy we compare two samples of ZnO nanorods with respect to their suitability as stimulated emitters. In the case of narrow nanorods their wave guiding quality causes a suppression of exciton-exciton scattering whereas no laser emission is detectable. Unlike their narrow counterparts, wide nanorods not only benefit from a larger overlap of the guided mode with the gain medium but a variation in VLS growth results in gold nanoparticles being present at the bottom of nanorods. Consequently, laser emission from single wide rods is evidenced up to 150 K. In addition to experimental studies we carry out 3D numerical simulations of the electric field distribution to evaluate the influence of gold nanoparticles at the nanorod/substrate interface. This finite element analysis confirms that gold leads to an enhancement of confinement within the resonator. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  5. Defect engineering of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Weber, M.H. [Center for Materials Research and Department of Physics and Astronomy, Washington State University, Pullman, WA 99164-2711 (United States)], E-mail: m_weber@wsu.edu; Selim, F.A.; Solodovnikov, D.; Lynn, K.G. [Center for Materials Research and Department of Physics and Astronomy, Washington State University, Pullman, WA 99164-2711 (United States)

    2008-10-31

    The defect responsible for the transparent to red color change of nominally undoped ZnO bulk single crystals is investigated. Upon annealing in the presence of metallic Zn as reported by Halliburton et al. and also Ti and Zr a native defect forms with an energy level about 0.7 eV below the conduction band. This change is reversible upon annealing in oxygen. Optical transmission data along with positron depth profiles and annealing studies are combined to identify the defect as oxygen vacancies. Vacancy clustering occurs at about 500 deg. C if isolated zinc and oxygen vacancies. In the absence of zinc vacancies, clusters form at about 800 deg. C.

  6. Defect engineering of ZnO

    International Nuclear Information System (INIS)

    Weber, M.H.; Selim, F.A.; Solodovnikov, D.; Lynn, K.G.

    2008-01-01

    The defect responsible for the transparent to red color change of nominally undoped ZnO bulk single crystals is investigated. Upon annealing in the presence of metallic Zn as reported by Halliburton et al. and also Ti and Zr a native defect forms with an energy level about 0.7 eV below the conduction band. This change is reversible upon annealing in oxygen. Optical transmission data along with positron depth profiles and annealing studies are combined to identify the defect as oxygen vacancies. Vacancy clustering occurs at about 500 deg. C if isolated zinc and oxygen vacancies. In the absence of zinc vacancies, clusters form at about 800 deg. C

  7. The effect of Co and In combinational or individual doping on the structural, optical and selective sensing properties of ZnO nanoparticles

    CSIR Research Space (South Africa)

    Maswanganye, MW

    2017-08-01

    Full Text Available , is found to increase the response to all stimuli to higher values than undoped or singly doped ZnO sensors at the expense of selectivity where In-Co-ZnO as well as undoped ZnO and Co-ZnO sensors have similar selectivity value of below 44% to CO. In-doped Zn...

  8. Fabrication and characterization of ZnO nanowires array electrodes with high photocurrent densities: Effects of the seed layer calcination time

    Energy Technology Data Exchange (ETDEWEB)

    Lu, Yi-Jing; Liu, Ching-Fang; Hu, Chi-Chang, E-mail: cchu@che.nthu.edu.tw; Kuo, Jen-Hou; Boddula, Rajender

    2017-03-01

    In this work, we demonstrate that vertically grown ZnO nanowire (NW) arrays of the wurzite phase were successfully fabricated on fluorine doped tin oxide (FTO) substrates via a hydrothermal method. The coating of a seed layer onto the FTO substrates was found to favor the growth of a uniform ZnO NWs array which shows saturation in the photocurrent density with a relatively low potential bias. Furthermore, prolonging the calcination time of the seed layer makes the ZnO NWs behave the better charge separation and improve the photo-electrochemical performance. Under the irradiation at a 75 mW cm{sup −2} from a simulated sunlight source, the ZnO NWs array electrode prepared from the seed layer with calcination at 350 °C for 5 h shows a saturated photocurrent density of 514 μA cm{sup −2} and a maximum half-cell solar-to-hydrogen (HC-STH) efficiency of 0.26% was obtained at 0.6 V versus reversible hydrogen electrode (RHE) in neutral electrolyte. - Highlights: • The seed layer annealing time strongly influences the textural and photo-activity of ZnO NWs. • The average diameter and density of ZnO NWs were controlled to 47–70 nm and 46–70 NWs μm{sup −2}, respectively. • ZnO NWs show promising application potential in solar-electrocatalytic water splitting under potential bias. • The ZnO NWs with SL annealing time = 5 h achieve the highest HC-STH efficiency of 0.26% at 0.6 V.

  9. Growth Mechanism Studies of ZnO Nanowires: Experimental Observations and Short-Circuit Diffusion Analysis.

    Science.gov (United States)

    Shih, Po-Hsun; Wu, Sheng Yun

    2017-07-21

    Plenty of studies have been performed to probe the diverse properties of ZnO nanowires, but only a few have focused on the physical properties of a single nanowire since analyzing the growth mechanism along a single nanowire is difficult. In this study, a single ZnO nanowire was synthesized using a Ti-assisted chemical vapor deposition (CVD) method to avoid the appearance of catalytic contamination. Two-dimensional energy dispersive spectroscopy (EDS) mapping with a diffusion model was used to obtain the diffusion length and the activation energy ratio. The ratio value is close to 0.3, revealing that the growth of ZnO nanowires was attributed to the short-circuit diffusion.

  10. Chemical bath deposited PbS thin films on ZnO nanowires for photovoltaic applications

    Energy Technology Data Exchange (ETDEWEB)

    Gertman, Ronen [Dept of Chemistry, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Osherov, Anna; Golan, Yuval [Dept of Materials Engineering, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Visoly-Fisher, Iris, E-mail: irisvf@bgu.ac.il [Ilse Katz Institute for Nanoscale Science and Technology, Ben Gurion University of the Negev, Be' er Sheva 84105 (Israel); Department of Solar Energy and Environmental Physics, Swiss Institute for Dryland Environmental and Energy Research, Jacob Blaustein Institutes for Desert Research, Ben Gurion University of the Negev, Sede Boqer Campus 84990 (Israel)

    2014-01-01

    Photovoltaic devices usually exploit mid-range band-gap semiconductors which absorb in the visible range of the solar spectrum. However, much energy is lost in the IR and near-IR range. We combined the advantages of small band-gap, bulk-like PbS deposited by facile, cheap and direct chemical bath deposition (CBD), with the good electronic properties of ZnO and the large surface area of nanowires, towards low cost photovoltaic devices utilizing IR and near-IR light. Surprisingly, CBD of PbS on ZnO, and particularly on ZnO nanowires, was not studied hitherto. Therefore, the mechanism of PbS growth by chemical bath deposition on ZnO nanowires was studied in details. A visible proof is shown for a growth mechanism starting from amorphous Pb(OH){sub 2} layer, that evolved into the ‘ion-by-ion’ growth mechanism. The growth mechanism and the resulting morphology at low temperatures were controlled by the thiourea concentration. The grain size affected the magnitude of the band-gap and was controlled by the deposition temperatures. Deposition above 40 °C resulted in bulk-like PbS with an optical band-gap of 0.4 eV. Methods were demonstrated for achieving complete PbS coverage of the complex ZnO NW architecture, a crucial requirement in optoelectronic devices to prevent shorts. Measurements of photocurrents under white and near-IR (784 nm) illumination showed that despite a 200 meV barrier for electron transfer at the PbS/ZnO interface, extraction of photo-electrons from PbS to the ZnO was feasible. The ability to harvest electrons from a narrow band-gap semiconductor deposited on a large surface-area electrode can advance the field towards high efficiency, low cost IR and near-IR sensors and third generation solar cells. - Highlights: • PbS was deposited on ZnO nanowires using chemical bath deposition. • At 50 °C the growth mechanism starts from an amorphous Pb(OH){sub 2} layer. • At 5 °C the growth mechanism of PbS can be controlled by thiourea concentrations

  11. Preparation and Photoluminescence of ZnO Comb-Like Structure and Nanorod Arrays

    Science.gov (United States)

    Yin, Song; Chen, Yi-qing; Su, Yong; Zhou, Qing-tao

    2007-06-01

    A large quantity of Zinc oxide (ZnO) comb-like structure and high-density well-aligned ZnO nanorod arrays were prepared on silicon substrate via thermal evaporation process without any catalyst. The morphology, growth mechanism, and optical properties of the both structures were investigated using XRD, SEM, TEM and PL. The resulting comb-teeth, with a diameter about 20 nm, growing along the [0001] direction have a well-defined epitaxial relationship with the comb ribbon. The ZnO nanorod arrays have a diameter about 200 nm and length up to several micrometers growing approximately vertical to the Si substrate. A ZnO film was obtained before the nanorods growth. A growth model is proposed for interpreting the growth mechanism of comb-like zigzag-notch nanostructure. Room temperature photoluminescence measurements under excitation wavelength of 325 nm showed that the ZnO comb-like nanostructure has a weak UV emission at around 384 nm and a strong green emission around 491 nm, which correspond to a near band-edge transition and the singly ionized oxygen vacancy, respectively. In contrast, a strong and sharp UV peak and a weak green peak was obtained from the ZnO nanorod arrays.

  12. ZnO twin-cones: synthesis, photoluminescence, and catalytic decomposition of ammonium perchlorate.

    Science.gov (United States)

    Sun, Xuefei; Qiu, Xiaoqing; Li, Liping; Li, Guangshe

    2008-05-19

    ZnO twin-cones, a new member to the ZnO family, were prepared directly by a solvothermal method using a mixed solution of zinc nitrate and ethanol. The reaction and growth mechanisms of ZnO twin-cones were investigated by X-ray diffraction, UV-visible spectra, infrared and ion trap mass spectra, and transmission electron microscopy. All as-prepared ZnO cones consisted of tiny single crystals with lengths of several micrometers. With prolonging of the reaction time from 1.5 h to 7 days, the twin-cone shape did not change at all, while the lattice parameters increased slightly and the emission peak of photoluminescence shifted from the green region to the near orange region. ZnO twin-cones are also explored as an additive to promote the thermal decomposition of ammonium perchlorate. The variations of photoluminescence spectra and catalytic roles in ammonium perchlorate decomposition were discussed in terms of the defect structure of ZnO twin-cones.

  13. CBE growth of high-quality ZnO epitaxial layers

    Energy Technology Data Exchange (ETDEWEB)

    El-Shaer, A.; Bakin, A.; Mofor, A.C.; Kreye, M.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Blaesing, J.; Krost, A. [Institute of Experimental Physics, Otto-von-Guericke-University Magdeburg (Germany); Stoimenos, J. [Physics Department, Aristotele University, Univ. Campus, 54006 Thessaloniki (Greece); Pecz, B. [Research Institute for Technical Physics and Materials Science, Hungarian Academy of Sciences, P.O. Box 49, 1525 Budapest (Hungary); Heuken, M. [Aixtron AG, Kackertstr. 15-17, 52072 Aachen (Germany)

    2006-03-15

    Further improvements on the recently reported novel approach to zinc oxide Chemical Beam Epitaxy (CBE) are presented. Hydrogen peroxide is employed as a very efficient novel oxidant. ZnO layers with a thickness from 100 nm to 600 nm were grown on c-sapphire using a MgO buffer. PL-mapping as well as conductivity mapping shows a good uniformity across the 2 inch ZnO-on-sapphire epiwafers. The measured surface roughness for the best layers is as low as 0.26 nm. HRXRD measurements of the obtained ZnO layers show excellent quality of the single crystalline ZnO. The FWHM of the HRXRD (0002) rocking curves measured for the 2 inch ZnO-on-sapphire wafers is as low as 27 arcsec with a very high lateral homogeneity across the whole wafer. Plane view HRTEM observations reveal the very good quality of the ZnO films. The results indicate that CBE is a suitable technique to fabricate ZnO of very high structural quality, which can eventually be used as an alternative to bulk ZnO substrates. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  14. Characterizations of multilayer ZnO thin films deposited by sol-gel spin coating technique

    Directory of Open Access Journals (Sweden)

    M.I. Khan

    Full Text Available In this work, zinc oxide (ZnO multilayer thin films are deposited on glass substrate using sol-gel spin coating technique and the effect of these multilayer films on optical, electrical and structural properties are investigated. It is observed that these multilayer films have great impact on the properties of ZnO. X-ray Diffraction (XRD confirms that ZnO has hexagonal wurtzite structure. Scanning Electron Microscopy (SEM showed the crack-free films which have uniformly distributed grains structures. Both micro and nano particles of ZnO are present on thin films. Four point probe measured the electrical properties showed the decreasing trend between the average resistivity and the number of layers. The optical absorption spectra measured using UV–Vis. showed the average transmittance in the visible region of all films is 80% which is good for solar spectra. The performance of the multilayer as transparent conducting material is better than the single layer of ZnO. This work provides a low cost, environment friendly and well abandoned material for solar cells applications. Keywords: Multilayer films, Semiconductor, ZnO, XRD, SEM, Optoelectronic properties

  15. Defects induced ferromagnetism in Mn doped ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Chattopadhyay, S.; Neogi, S.K. [Department of Physics, University of Calcutta, 92A P C Road, Kolkata 700009 (India); Sarkar, A. [Department of Physics, Bangabasi Morning College, Kolkata 700009 (India); Mukadam, M.D.; Yusuf, S.M. [Solid State Physics Division, Bhaba Atomic Research Centre, Mumbai 400085 (India); Banerjee, A. [Department of Physics, University of Calcutta, 92A P C Road, Kolkata 700009 (India); Bandyopadhyay, S., E-mail: sbaphy@caluniv.ac.i [Department of Physics, University of Calcutta, 92A P C Road, Kolkata 700009 (India)

    2011-02-15

    Single phase Mn doped (2 at%) ZnO samples have been synthesized by the solid-state reaction technique. Before the final sintering at 500 {sup o}C, the mixed powders have been milled for different milling periods (6, 24, 48 and 96 h). The grain sizes of the samples are very close to each other ({approx}32{+-}4 nm). However, the defective state of the samples is different from each other as manifested from the variation of magnetic properties and electrical resistivity with milling time. All the samples have been found to be ferromagnetic with clear hysteresis loops at room temperature. The maximum value for saturation magnetization (0.11 {mu}{sub B}/Mn atom) was achieved for 96 h milled sample. Electrical resistivity has been found to increase with increase in milling time. The most resistive sample bears the largest saturation magnetization. Variation of average positron lifetime with milling time bears a close similarity with that of the saturation magnetization. This indicates the key role played by open volume vacancy defects, presumably zinc vacancies near grain surfaces, in inducing ferromagnetic order in Mn doped ZnO. To attain optimum defect configuration favorable for ferromagnetism in this kind of samples proper choice of milling period and annealing conditions is required. - Research highlights: 2 at% Mn doped ZnO samples are single phase. All the samples exhibit ferromagnetism at room temperature. Correlation between saturation magnetization and positron annihilation lifetime established.

  16. Defects induced ferromagnetism in Mn doped ZnO

    International Nuclear Information System (INIS)

    Chattopadhyay, S.; Neogi, S.K.; Sarkar, A.; Mukadam, M.D.; Yusuf, S.M.; Banerjee, A.; Bandyopadhyay, S.

    2011-01-01

    Single phase Mn doped (2 at%) ZnO samples have been synthesized by the solid-state reaction technique. Before the final sintering at 500 o C, the mixed powders have been milled for different milling periods (6, 24, 48 and 96 h). The grain sizes of the samples are very close to each other (∼32±4 nm). However, the defective state of the samples is different from each other as manifested from the variation of magnetic properties and electrical resistivity with milling time. All the samples have been found to be ferromagnetic with clear hysteresis loops at room temperature. The maximum value for saturation magnetization (0.11 μ B /Mn atom) was achieved for 96 h milled sample. Electrical resistivity has been found to increase with increase in milling time. The most resistive sample bears the largest saturation magnetization. Variation of average positron lifetime with milling time bears a close similarity with that of the saturation magnetization. This indicates the key role played by open volume vacancy defects, presumably zinc vacancies near grain surfaces, in inducing ferromagnetic order in Mn doped ZnO. To attain optimum defect configuration favorable for ferromagnetism in this kind of samples proper choice of milling period and annealing conditions is required. - Research highlights: → 2 at% Mn doped ZnO samples are single phase. → All the samples exhibit ferromagnetism at room temperature. → Correlation between saturation magnetization and positron annihilation lifetime established.

  17. Passivation of ZnO Nanowire Guests and 3D Inverse Opal Host Photoanodes for Dye-Sensitized Solar Cells

    KAUST Repository

    Labouchere, Philippe

    2014-04-23

    A hierarchical host-guest nanostructured photoanode is reported for dye-sensitized solar cells. It is composed of ZnO nanowires grown in situ into the macropores of a 3D ZnO inverse opal structure, which acts both as a seed layer and as a conductive backbone host. Using a combination of self-assembly, hydrothermal or electrodeposition of single crystalline ZnO nanowires and TiO2 passivation, a novel photoanode with scattering capability for optimal light harvesting is fabricated. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Lattice sites of Na dopants in ZnO

    CERN Document Server

    AUTHOR|(CDS)2069243; Martins Correia, Joao; Amorim, Lígia; Decoster, Stefan; Ribeiro da Silva, Manuel; Da Costa Pereira, Lino Miguel

    2016-01-01

    The angular distribution of beta− particles emitted by the radioactive isotope 24Na was monitored following implantation into ZnO single crystals at fluences above 5E12 cm−2 at CERN’s ISOLDE facility. We identified sodium on two distinct sites: on substitutional Zn sites and on interstitial sites that are close to the so-called octahedral site. The interstitial Na was to large extent converted to substitutional Na already for annealing at 200°C, from which an activation energy of 0.8−1.3 eV, most likely around 1.2 eV, is estimated for the migration of interstitial Na in ZnO.

  19. Carbon doped ZnO: Synthesis, characterization and interpretation

    International Nuclear Information System (INIS)

    Mishra, D.K.; Mohapatra, J.; Sharma, M.K.; Chattarjee, R.; Singh, S.K.; Varma, Shikha; Behera, S.N.; Nayak, Sanjeev K.; Entel, P.

    2013-01-01

    A novel thermal plasma in-flight technique has been adopted to synthesize nanocrystalline ZnO and carbon doped nanocrystalline ZnO matrix. Transmission electron microscopy (TEM) studies on these samples show the average particle sizes to be around 32 nm for ZnO and for carbon doped ZnO. An enhancement of saturation magnetization in nanosized carbon doped ZnO matrix by a factor of 3.8 has been found in comparison to ZnO nanoparticles at room temperature. Raman measurement clearly indicates the presence of Zn–C complexes surrounded by ZnO matrix in carbon doped ZnO. This indicates that the ferromagnetic signature in carbon doped ZnO arises from the creation of defects or the development of oxy-carbon clusters, in the carbon doped ZnO system. Theoretical studies based on density functional theory also support the experimental analyses. - Highlights: ► Synthesis of nanocrystalline ZnO and carbon doped ZnO matrix by inflight thermal plasma reactor. ► Enhancement of ferromagnetism in nanosized carbon doped ZnO in comparison to ZnO nanoparticles. ► Raman measurement indicates the presence of Zn–C complexes surrounded by ZnO matrix. ► Ferromagnetic signature in carbon doped ZnO arises from the development of oxy-carbon clusters. ► DFT supports experimental evidence of ferromagnetism in C doped ZnO nanoparticles.

  20. Magnetic properties of sol-gel synthesized C-doped ZnO nanoparticles

    Energy Technology Data Exchange (ETDEWEB)

    Dung, Nguyen Duc, E-mail: dung.nguyenduc@hust.edu.vn [Advanced Institute of Science and Technology (AIST), Hanoi University of Science and Technology, No.1 Dai Co Viet, Hanoi (Viet Nam); Son, Cao Thai; Loc, Pham Vu; Cuong, Nguyen Huu; Kien, Pham The; Huy, Pham Thanh [Advanced Institute of Science and Technology (AIST), Hanoi University of Science and Technology, No.1 Dai Co Viet, Hanoi (Viet Nam); Ha, Ngo Ngoc [International Training Institute for Materials Science (ITIMS), Hanoi University of Science and Technology, No.1 Dai Co Viet, Hanoi (Viet Nam)

    2016-05-25

    ZnO doping with Carbon (C-doped ZnO) materials were prepared by sol-gel technique following with a heat treatment process. Single phase of Wurtzite crystal structure of ZnO was concluded via x-ray diffraction (XRD) with a large amount of excess C tracking by energy dispersive X-ray spectroscopy (EDX) analysis. Two types of ZnO crystals (twinning particles) with different grain sizes and shapes were identified via scanning electron microscopy (FE-SEM). The first type has a smaller grain size of about 20 nm and hexagonal shape. And the second type has a larger grain size of about 80–120 nm and round shape. C substitutions of both Zn and O sites to form C–O and C–Zn bonds were conclusively confirmed via x-ray photoelectron spectroscope (XPS). Experimental evidences for the co-existence of different ferromagnetic phases in the materials are reported and discussed. Two Curie points at high temperatures (>500 °C) are presented. A metamagnetic transition was observed at magnetic field H = 19.2 kOe which was related to the co-existence of ferromagnetic phases. These involve in the formation of twinning C-doped ZnO nanoparticles. - Highlights: • Formation of sol-gel prepared single phase wurtzite ZnO nanoparticles. • Two morphological C-doped ZnO nanoparticles of different grain sizes. • The room temperature ferromagnetism. • An abnormal metamagnetic transition at magnetic field H = 19.2 kOe. • Two different Curie points (T{sub C}) at 500–600 °C.

  1. Structural, magnetic and electronic structure properties of Co doped ZnO nanoparticles

    International Nuclear Information System (INIS)

    Kumar, Shalendra; Song, T.K.; Gautam, Sanjeev; Chae, K.H.; Kim, S.S.; Jang, K.W.

    2015-01-01

    Highlights: • XRD and HR-TEM results show the single phase nature of Co doped ZnO nanoparticles. • XMCD and dc magnetization results indicate the RT-FM in Co doped ZnO nanoparticles. • Co L 3,2 NEXAFS spectra infer that Co ions are in 2+ valence state. • O K edge NEXAFS spectra show that O vacancy increases with Co doping in ZnO. - Abstract: We reported structural, magnetic and electronic structure studies of Co doped ZnO nanoparticles. Doping of Co ions in ZnO host matrix has been studied and confirmed using various methods; such as X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), energy dispersed X-ray (EDX), high resolution transmission electron microscopy (HR-TEM), Fourier transform infrared spectroscopy (FT-IR), near edge X-ray absorption fine structure (NEXAFS) spectroscopy, magnetic hysteresis loop measurements and X-ray magnetic circular dichroism (XMCD). From the XRD and HR-TEM results, it is observed that Co doped ZnO nanoparticles have single phase nature with wurtzite structure and exclude the possibility of secondary phase formation. FE-SEM and TEM micrographs show that pure and Co doped nanoparticles are nearly spherical in shape. O K edge NEXAFS spectra indicate that O vacancies increase with Co doping. The Co L 3,2 edge NEXAFS spectra revealed that Co ions are in 2+ valence state. DC magnetization hysteresis loops and XMCD results clearly showed the intrinsic origin of temperature ferromagnetism in Co doped ZnO nanoparticles

  2. High-performance UV detector made of ultra-long ZnO bridging nanowires

    International Nuclear Information System (INIS)

    Li Yanbo; Della Valle, Florent; Simonnet, Mathieu; Yamada, Ichiro; Delaunay, Jean-Jacques

    2009-01-01

    A nanowatt UV photoconductive detector made up of ultra-long (∼100 μm) ZnO bridging nanowires has been fabricated by a single-step chemical vapor deposition (CVD) process. The electrodes, forming comb-shaped thick ZnO layers, and the sensing elements, consisting of ZnO nanowires bridging the electrodes, were fabricated simultaneously in a single-step CVD process. The device showed drastic changes (10-10 5 times) in current under a wide range of UV irradiances (10 -8 -10 -2 W cm -2 ). Moreover, the detector exhibited fast response (rise and decay times of the order of 1 s) to UV illumination in air, but no response to visible light (hν<3.2 eV). Our approach provides a simple and cost-effective way to fabricate high-performance 'visible-blind' UV detectors.

  3. Defect studies of thin ZnO films prepared by pulsed laser deposition

    International Nuclear Information System (INIS)

    Vlček, M; Čížek, J; Procházka, I; Novotný, M; Bulíř, J; Lančok, J; Anwand, W; Brauer, G; Mosnier, J-P

    2014-01-01

    Thin ZnO films were grown by pulsed laser deposition on four different substrates: sapphire (0 0 0 1), MgO (1 0 0), fused silica and nanocrystalline synthetic diamond. Defect studies by slow positron implantation spectroscopy (SPIS) revealed significantly higher concentration of defects in the studied films when compared to a bulk ZnO single crystal. The concentration of defects in the films deposited on single crystal sapphire and MgO substrates is higher than in the films deposited on amorphous fused silica substrate and nanocrystalline synthetic diamond. Furthermore, the effect of deposition temperature on film quality was investigated in ZnO films deposited on synthetic diamond substrates. Defect studies performed by SPIS revealed that the concentration of defects firstly decreases with increasing deposition temperature, but at too high deposition temperatures it increases again. The lowest concentration of defects was found in the film deposited at 450° C.

  4. Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

    KAUST Repository

    Alshammari, Fwzah Hamud; Nayak, Pradipta K.; Wang, Zhenwei; Alshareef, Husam N.

    2016-01-01

    We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

  5. Enhanced ZnO Thin-Film Transistor Performance Using Bilayer Gate Dielectrics

    KAUST Repository

    Alshammari, Fwzah Hamud

    2016-08-24

    We report ZnO TFTs using Al2O3/Ta2O5 bilayer gate dielectrics grown by atomic layer deposition. The saturation mobility of single layer Ta2O5 dielectric TFT was 0.1 cm2 V-1 s-1, but increased to 13.3 cm2 V-1 s-1 using Al2O3/Ta2O5 bilayer dielectric with significantly lower leakage current and hysteresis. We show that point defects present in ZnO film, particularly VZn, are the main reason for the poor TFT performance with single layer dielectric, although interfacial roughness scattering effects cannot be ruled out. Our approach combines the high dielectric constant of Ta2O5 and the excellent Al2O3/ZnO interface quality, resulting in improved device performance. © 2016 American Chemical Society.

  6. Formation of polar surfaces in microstructured ZnO by doping with Cu and applications in photocatalysis using visible light

    International Nuclear Information System (INIS)

    Pawar, Rajendra C.; Choi, Da-Hyun; Lee, Jai-Sung; Lee, Caroline S.

    2015-01-01

    We report the synthesis of copper-doped zinc oxide microstructures with a large amount of polar surfaces using a single-step facile chemical method by collecting powders of zinc oxide (ZnO) microstructures. It was found that rod-like morphology of ZnO transformed into disk and sphere-like structure with nanosheets. Hollow disk-like structures were formed due to the surface etching properties of Cl − ions in the copper chloride precursor. The photocatalytic degradation of methylene blue (MB) and rhodamine B (RhB) dyes was measured under irradiation with visible light using the structures as catalysts. The Cu-doped ZnO exhibited better photodegradation properties than did undoped ZnO. The enhanced performance is attributed to the existence of (001) polar surfaces, oxygen vacancies, and increased optical absorbance at visible wavelengths, which is consistent with the field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), room temperature photoluminescence (PL), and optical absorbance measurements. These favorable photocatalytic properties of the doped microstructures demonstrate their potential for use in wastewater treatment. - Graphical abstract: Graphical abstract shows the electron transfer mechanism under visible light for Cu-doped ZnO microstructures and the photocatalytic degradation of dye. - Highlights: • Cu induced microstructures of ZnO with polar surfaces. • Methylene blue degradation under visible light irradiation. • Room temperature ferromagnetism due to oxygen vacancies in ZnO. • 7% Cu–ZnO has highest photocatalytic activity

  7. Piezoelectric and optoelectronic properties of electrospinning hybrid PVDF and ZnO nanofibers

    Science.gov (United States)

    Ma, Jian; Zhang, Qian; Lin, Kabin; Zhou, Lei; Ni, Zhonghua

    2018-03-01

    Polyvinylidene fluoride (PVDF) is a unique ferroelectric polymer with significant promise for energy harvesting, data storage, and sensing applications. ZnO is a wide direct band gap semiconductor (3.37 eV), commonly used as ultraviolet photodetectors, nanoelectronics, photonicsand piezoelectric generators. In this study, we produced high output piezoelectric energy harvesting materials using hybrid PVDF/ZnO nanofibers deposited via electrospinning. The strong electric fields and stretching forces during the electrospinning process helps to align dipoles in the nanofiber crystal such that the nonpolar α-phase (random orientation of dipoles) is transformed into polar β-phase in produced nanofibers. The effect of the additional ZnO nanowires on the nanofiber β-phase composition and output voltage are investigated. The maximum output voltage generated by a single hybrid PVDF and ZnO nanofiber (33 wt% ZnO nanowires) is over 300% of the voltage produced by a single nanofiber made of pure PVDF. The ZnO NWs served not only as a piezoelectric material, but also as a semiconducting material. The electrical conductivity of the hybrid PVDF/ZnO nanofibers increased by more than a factor of 4 when exposed under ultraviolet (UV) light.

  8. Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

    Directory of Open Access Journals (Sweden)

    Tamil Many K Thandavan

    Full Text Available Vapor phase transport (VPT assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn was used to prepare un-doped and Al-doped zinc oxide (ZnO nanostructures (NSs. The structure and morphology were characterized by field emission scanning electron microscopy (FESEM and x-ray diffraction (XRD. Photoluminescence (PL properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni, oxygen interstitials (Oi, zinc vacancy (Vzn, singly charged zinc vacancy (VZn-, oxygen vacancy (Vo, singly charged oxygen vacancy (Vo+ and oxygen anti-site defects (OZn in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

  9. Enhanced photoluminescence and Raman properties of Al-Doped ZnO nanostructures prepared using thermal chemical vapor deposition of methanol assisted with heated brass.

    Science.gov (United States)

    Thandavan, Tamil Many K; Gani, Siti Meriam Abdul; San Wong, Chiow; Md Nor, Roslan

    2015-01-01

    Vapor phase transport (VPT) assisted by mixture of methanol and acetone via thermal evaporation of brass (CuZn) was used to prepare un-doped and Al-doped zinc oxide (ZnO) nanostructures (NSs). The structure and morphology were characterized by field emission scanning electron microscopy (FESEM) and x-ray diffraction (XRD). Photoluminescence (PL) properties of un-doped and Al-doped ZnO showed significant changes in the optical properties providing evidence for several types of defects such as zinc interstitials (Zni), oxygen interstitials (Oi), zinc vacancy (Vzn), singly charged zinc vacancy (VZn-), oxygen vacancy (Vo), singly charged oxygen vacancy (Vo+) and oxygen anti-site defects (OZn) in the grown NSs. The Al-doped ZnO NSs have exhibited shifted PL peaks at near band edge (NBE) and red luminescence compared to the un-doped ZnO. The Raman scattering results provided evidence of Al doping into the ZnO NSs due to peak shift from 145 cm-1 to an anomalous peak at 138 cm-1. Presence of enhanced Raman signal at around 274 and 743 cm-1 further confirmed Al in ZnO NSs. The enhanced D and G band in all Al-doped ZnO NSs shows possible functionalization and doping process in ZnO NSs.

  10. Epitaxial properties of ZnO thin films on SrTiO3 substrates grown by laser molecular beam epitaxy

    International Nuclear Information System (INIS)

    Wei, X. H.; Li, Y. R.; Zhu, J.; Huang, W.; Zhang, Y.; Luo, W. B.; Ji, H.

    2007-01-01

    Epitaxial ZnO thin films with different orientations have been grown by laser molecular beam epitaxy on (001)- (011)-, and (111)-orientated SrTiO 3 single-crystal substrates. The growth behavior was in situ monitored by reflection high-energy electron diffraction, and the epitaxial orientation relations were reconfirmed by ex situ x-ray diffraction measurements. In the case of ZnO on SrTiO 3 (001), four orthogonal domains coexisted in the ZnO epilayer, i.e., ZnO(110) parallel SrTiO 3 (001) and ZnO[-111] parallel SrTiO 3 . For (011)- and (111)-orientated substrates, single-domain epitaxy with c axial orientation was observed, in which the in-plane relationship was ZnO[110] parallel SrTiO 3 [110] irrespective of the substrate orientations. Additionally, the crystalline quality of ZnO on SrTiO 3 (111) was better than that of ZnO on SrTiO 3 (011) because of the same symmetry between the (111) substrates and (001) films. The obtained results can be attributed to the difference of the in-plane crystallographic symmetry. Furthermore, those alignments can be explained by the interface stress between the substrates and the films

  11. doped ZnO thick film resistors

    Indian Academy of Sciences (India)

    The characterization and ethanol gas sensing properties of pure and doped ZnO thick films were investigated. Thick films of pure zinc oxide were prepared by the screen printing technique. Pure zinc oxide was almost insensitive to ethanol. Thick films of Al2O3 (1 wt%) doped ZnO were observed to be highly sensitive to ...

  12. Lattice location of implanted As in ZnO

    CERN Document Server

    Wahl, U; Correia, J G; Marques, A C; Alves, E; Soares, J C

    2007-01-01

    Radioactive 73As ions were implanted into a ZnO single crystal at room temperature with 60 keV up to a fluence of 2×1013 cm−2. Subsequently, the angular emission channeling patterns of emitted conversion electrons were recorded by means of a position-sensitive detector in the as-implanted state and following annealing up to 900 C, and were compared to simulated emission yields for a variety of different lattice sites. We find that As does not occupy substitutional O sites, but mainly occupies the substitutional Zn sites. The fraction of As on O sites was at most a few per cent. Arsenic in ZnO is thus an interesting example of an impurity in a semiconductor where the major impurity lattice site is determined by atomic size and electronegativity rather than its position in the periodic system. Possible consequences with respect to the role of arsenic as a p-type dopant in ZnO are being discussed.

  13. Exploring the sensitivity of ZnO nanotubes to tyrosine nitration: A DFT approach

    International Nuclear Information System (INIS)

    Maddahi, Pari Sadat; Shahtahmassebi, Nasser; Rezaee Roknabadi, Mahmood; Moosavi, Fatemeh

    2016-01-01

    Due to association of protein tyrosine nitration (PTN) with development of some serious human disorders and diseases, in this paper, the possible applications of ZnO-based nanobiosensors in nitrated tyrosine (nTyr) detection were explored within the density functional framework. With this motivation, the interaction of nTyr with ZnO single walled nanotubes via all possible active sites of nTyr was investigated. The results show the tendency of nTyr to interact through its nitro site (forming nitro-site configuration) with ZnO SWNTs as it has the highest binding energy; while, the charge–solvent configuration involving the interaction of nTyr's phenolic ring has the second place in terms of binding energy magnitude. Regardless of which active site contributes in interaction, the binding energies exhibit an ascending trend with decrease of SWNTs' curvature. Electronic properties analysis indicates that nTyr interaction via its nitro group results in formation of some flat bands inside the band gap region leading to significant reduction of overall band gap energy. Similar behavior is also observed in charge–solvent configuration but the band gap energy is larger. These red shifts are mainly attributed to contribution of 2p orbitals of species present in nTyr. Also, the hybridization of 3d orbital of Zn atom with 2p orbitals of nitro group atomic species is found responsible for bonding formation in bioconjugated system possessing the highest binding energy. Comparison of the electronic band structure of ZnO SWNT–Tyr with that of ZnO SWNT–nTyr indicates the sensitivity of ZnO SWNTs toward tyrosine nitration hence, a considerable change in its optical spectra is expectable. This introduces ZnO SWNTs as a promising candidate for PTN detection. - Highlights: • Physical properties of ZnO SWNT conjugated with nTyr is studied by DFT method. • nTyr prefers to interact with ZnO SWNTs via the nitro site. • An ascending trend is observed in binding energy by

  14. Exploring the sensitivity of ZnO nanotubes to tyrosine nitration: A DFT approach

    Energy Technology Data Exchange (ETDEWEB)

    Maddahi, Pari Sadat [Department of Physics, Ferdowsi University of Mashhad, Mashhad (Iran, Islamic Republic of); Nanoresearch Center, Ferdowsi University of Mashhad, Mashhad (Iran, Islamic Republic of); Shahtahmassebi, Nasser, E-mail: Nasser@um.ac.ir [Department of Physics, Ferdowsi University of Mashhad, Mashhad (Iran, Islamic Republic of); Nanoresearch Center, Ferdowsi University of Mashhad, Mashhad (Iran, Islamic Republic of); Rezaee Roknabadi, Mahmood [Department of Physics, Ferdowsi University of Mashhad, Mashhad (Iran, Islamic Republic of); Moosavi, Fatemeh [Department of Chemistry, Ferdowsi University of Mashhad, Mashhad (Iran, Islamic Republic of)

    2016-05-27

    Due to association of protein tyrosine nitration (PTN) with development of some serious human disorders and diseases, in this paper, the possible applications of ZnO-based nanobiosensors in nitrated tyrosine (nTyr) detection were explored within the density functional framework. With this motivation, the interaction of nTyr with ZnO single walled nanotubes via all possible active sites of nTyr was investigated. The results show the tendency of nTyr to interact through its nitro site (forming nitro-site configuration) with ZnO SWNTs as it has the highest binding energy; while, the charge–solvent configuration involving the interaction of nTyr's phenolic ring has the second place in terms of binding energy magnitude. Regardless of which active site contributes in interaction, the binding energies exhibit an ascending trend with decrease of SWNTs' curvature. Electronic properties analysis indicates that nTyr interaction via its nitro group results in formation of some flat bands inside the band gap region leading to significant reduction of overall band gap energy. Similar behavior is also observed in charge–solvent configuration but the band gap energy is larger. These red shifts are mainly attributed to contribution of 2p orbitals of species present in nTyr. Also, the hybridization of 3d orbital of Zn atom with 2p orbitals of nitro group atomic species is found responsible for bonding formation in bioconjugated system possessing the highest binding energy. Comparison of the electronic band structure of ZnO SWNT–Tyr with that of ZnO SWNT–nTyr indicates the sensitivity of ZnO SWNTs toward tyrosine nitration hence, a considerable change in its optical spectra is expectable. This introduces ZnO SWNTs as a promising candidate for PTN detection. - Highlights: • Physical properties of ZnO SWNT conjugated with nTyr is studied by DFT method. • nTyr prefers to interact with ZnO SWNTs via the nitro site. • An ascending trend is observed in binding

  15. Title: Using Alignment and 2D Network Simulations to Study Charge Transport Through Doped ZnO Nanowire Thin Film Electrodes

    KAUST Repository

    Phadke, Sujay; Lee, Jung-Yong; West, Jack; Peumans, Peter; Salleo, Alberto

    2011-01-01

    of magnitude lower than the single nanowire resistance. Simulations suggest that the conductivity of such thin film devices could be further enhanced by using longer nanowires. Solution processed Gallium doped ZnO nanowires are aligned on substrates using

  16. Effect of phosphorus incorporation on morphology and optical properties of ZnO nanorods

    International Nuclear Information System (INIS)

    Fan, Donghua; Zhang, Rong; Wang, Xianghu

    2011-01-01

    Graphical abstract: XPS spectra of the P-doped ZnO nanorods: (a) Zn 2p, (b) O 1s, and (c) P 2p spectra. The red curve in c is the Gauss-fitting curve. (d) Raman spectra of P-doped (curve 1) and pure (curve 2) ZnO nanorods. Research highlights: → P-doped ZnO nanorods have been prepared on Si substrates without any catalyst. → The introduction of phosphorus leads to the growth of tapered tip in the nanorods. → The formation of tapered tip is attributed to the relaxation of the lattice strain along the radial direction. → The strong ultraviolet peak is connected with the phosphorus acceptor-related emissions. -- Abstract: Phosphorus-doped ZnO nanorods have been prepared on Si substrates by thermal evaporation process without any catalyst. X-ray photoelectron spectroscopy and Raman spectra indicate that phosphorus entering into ZnO nanorods mainly occupies Zn site rather than O one. The introduction of phosphorus leads to the morphological changes of nanorods from hexagonal tip to tapered one, which should be attributed to the relaxation of the lattice strain caused by phosphorus occupying Zn site along the radial direction. Transmission electron microscopy shows that phosphorus-doped ZnO nanorods still are single crystal and grow along [0 0 0 1] direction. The effect of phosphorous dopant on optical properties of ZnO nanorods also is studied by the temperature-dependent photoluminescence spectra, which indicates that the strong ultraviolet emission is connected with the phosphorus acceptor-related emissions.

  17. Structural characterization of ZnO thin films grown on various substrates by pulsed laser deposition

    International Nuclear Information System (INIS)

    Novotný, M; Bulíř, J; Lančok, J; Čížek, J; Kužel, R; Connolly, J; McCarthy, E; Krishnamurthy, S; Mosnier, J-P; Anwand, W; Brauer, G

    2012-01-01

    ZnO thin films were grown by pulsed laser deposition on three different substrates: sapphire (0 0 0 1), MgO (1 0 0) and fused silica (FS). The structure and morphology of the films were characterized by x-ray diffraction and scanning electron microscopy and defect studies were carried out using slow positron implantation spectroscopy (SPIS). Films deposited on all substrates studied in this work exhibit the wurtzite ZnO structure and are characterized by an average crystallite size of 20-100 nm. However, strong differences in the microstructure of films deposited on various substrates were found. The ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit local epitaxy, i.e. a well-defined relation between film crystallites and the substrate. Domains with different orientation relationships with the substrate were found in both films. On the other hand, the film deposited on the FS substrate exhibits fibre texture with random lateral orientation of crystallites. Extremely high compressive in-plane stress of σ ∼ 14 GPa was determined in the film deposited on the MgO substrate, while the film deposited on sapphire is virtually stress-free, and the film deposited on the FS substrate exhibits a tensile in-plane stress of σ ∼ 0.9 GPa. SPIS investigations revealed that the concentration of open-volume defects in the ZnO films is substantially higher than that in a bulk ZnO single crystal. Moreover, the ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit a significantly higher density of defects than the film deposited on the amorphous FS substrate. (paper)

  18. Detecting Liquefied Petroleum Gas (LPG) at Room Temperature Using ZnSnO3/ZnO Nanowire Piezo-Nanogenerator as Self-Powered Gas Sensor.

    Science.gov (United States)

    Fu, Yongming; Nie, Yuxin; Zhao, Yayu; Wang, Penglei; Xing, Lili; Zhang, Yan; Xue, Xinyu

    2015-05-20

    High sensitivity, selectivity, and reliability have been achieved from ZnSnO3/ZnO nanowire (NW) piezo-nanogenerator (NG) as self-powered gas sensor (SPGS) for detecting liquefied petroleum gas (LPG) at room temperature (RT). After being exposed to 8000 ppm LPG, the output piezo-voltage of ZnSnO3/ZnO NW SPGS under compressive deformation is 0.089 V, much smaller than that in air ambience (0.533 V). The sensitivity of the SPGS against 8000 ppm LPG is up to 83.23, and the low limit of detection is 600 ppm. The SPGS has lower sensitivity against H2S, H2, ethanol, methanol and saturated water vapor than LPG, indicating good selectivity for detecting LPG. After two months, the decline of the sensing performance is less than 6%. Such piezo-LPG sensing at RT can be ascribed to the new piezo-surface coupling effect of ZnSnO3/ZnO nanocomposites. The practical application of the device driven by human motion has also been simply demonstrated. This work provides a novel approach to fabricate RT-LPG sensors and promotes the development of self-powered sensing system.

  19. Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells

    Science.gov (United States)

    Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws; Majeed Khan, M. A.; Ahamed, Maqusood

    2015-09-01

    We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of AlxZn1-xO nanocrystals with the size range of 33-55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 & caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved.

  20. A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes

    Science.gov (United States)

    Lu, Yuanxi; Huang, Jian; Li, Bing; Tang, Ke; Ma, Yuncheng; Cao, Meng; Wang, Lin; Wang, Linjun

    2018-01-01

    ZnO (Zinc oxide)/Si (Silicon) heterojunctions were prepared by depositing n-type ZnO films on p-type single crystal Si substrates using magnetron sputtering. A boron and gallium co-doped ZnO (BGZO) high conductivity intermediate layer was deposited between aurum (Au) electrodes and ZnO films. The influence of the BGZO layer on the properties of Au/ZnO contacts and the performance of ZnO/Si heterojunctions was investigated. The results show an improvement in contact resistance by introducing the BGZO layer. Compared with the ZnO/Si heterojunction, the BGZO/ZnO/Si heterojunction exhibits a larger forward current, a smaller turn-on voltage and higher ratio of ultraviolet (UV) photo current/dark current.

  1. Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

    Science.gov (United States)

    Ning, Shuai; Zhan, Peng; Wang, Wei-Peng; Li, Zheng-Cao; Zhang, Zheng-Jun

    2014-12-01

    Highly c-axis oriented un-doped zinc oxide (ZnO) thin films, each with a thickness of ~ 100 nm, are deposited on Si (001) substrates by pulsed electron beam deposition at a temperature of ~ 320 °C, followed by annealing at 650 °C in argon in a strong magnetic field. X-ray photoelectron spectroscopy (XPS), positron annihilation analysis (PAS), and electron paramagnetic resonance (EPR) characterizations suggest that the major defects generated in these ZnO films are oxygen vacancies. Photoluminescence (PL) and magnetic property measurements indicate that the room-temperature ferromagnetism in the un-doped ZnO film originates from the singly ionized oxygen vacancies whose number depends on the strength of the magnetic field applied in the thermal annealing process. The effects of the magnetic field on the defect generation in the ZnO films are also discussed.

  2. Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

    International Nuclear Information System (INIS)

    Ning Shuai; Zhan Peng; Wang Wei-Peng; Li Zheng-Cao; Zhang Zheng-Jun

    2014-01-01

    Highly c-axis oriented un-doped zinc oxide (ZnO) thin films, each with a thickness of ∼ 100 nm, are deposited on Si (001) substrates by pulsed electron beam deposition at a temperature of ∼ 320 °C, followed by annealing at 650 °C in argon in a strong magnetic field. X-ray photoelectron spectroscopy (XPS), positron annihilation analysis (PAS), and electron paramagnetic resonance (EPR) characterizations suggest that the major defects generated in these ZnO films are oxygen vacancies. Photoluminescence (PL) and magnetic property measurements indicate that the room-temperature ferromagnetism in the un-doped ZnO film originates from the singly ionized oxygen vacancies whose number depends on the strength of the magnetic field applied in the thermal annealing process. The effects of the magnetic field on the defect generation in the ZnO films are also discussed. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  3. Converse Piezoelectric Effect Induced Transverse Deflection of a Free-Standing ZnO Microbelt

    KAUST Repository

    Hu, Youfan; Gao, Yifan; Singamaneni, Srikanth; Tsukruk, Vladimir V.; Wang, Zhong Lin

    2009-01-01

    We demonstrate the first electric field induced transverse deflection of a single-crystal, free-standing ZnO microbelt as a result of converse piezoelectric effect. For a microbelt growing along the c-axis, a shear stress in the a-c plane can

  4. Superhydrophobic multi-scale ZnO nanostructures fabricated by chemical vapor deposition method.

    Science.gov (United States)

    Zhou, Ming; Feng, Chengheng; Wu, Chunxia; Ma, Weiwei; Cai, Lan

    2009-07-01

    The ZnO nanostructures were synthesized on Si(100) substrates by chemical vapor deposition (CVD) method. Different Morphologies of ZnO nanostructures, such as nanoparticle film, micro-pillar and micro-nano multi-structure, were obtained with different conditions. The results of XRD and TEM showed the good quality of ZnO crystal growth. Selected area electron diffraction analysis indicates the individual nano-wire is single crystal. The wettability of ZnO was studied by contact angle admeasuring apparatus. We found that the wettability can be changed from hydrophobic to super-hydrophobic when the structure changed from smooth particle film to single micro-pillar, nano-wire and micro-nano multi-scale structure. Compared with the particle film with contact angle (CA) of 90.7 degrees, the CA of single scale microstructure and sparse micro-nano multi-scale structure is 130-140 degrees, 140-150 degrees respectively. But when the surface is dense micro-nano multi-scale structure such as nano-lawn, the CA can reach to 168.2 degrees . The results indicate that microstructure of surface is very important to the surface wettability. The wettability on the micro-nano multi-structure is better than single-scale structure, and that of dense micro-nano multi-structure is better than sparse multi-structure.

  5. ZnO nanorod arrays grown under different pressures and their photoluminescence properties

    Energy Technology Data Exchange (ETDEWEB)

    Meng Xiuqing [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China); Graduate School of the Chinese Academy of Sciences (China); Zhao Dongxu [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China)]. E-mail: dxzhao2000@yahoo.com.cn; Shen Dezhen [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China); Zhang Jiying [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China); Li Binghui [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China); Wang Xiaohua [National Key Laboratory of High Power Semiconductor Laser, Changchun University of Science and technology, 7089 Weixing Road Changchun (China); Fan Xiwu [Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, 16 East Nan-Hu Road, Open Economic ZoneChangchun 130033 (China)

    2007-01-15

    The ZnO nanorod arrays were synthesized via a simple vapor deposition method on Si (1 1 1) substrates at a low growth temperature of 520 deg. C. By selecting different source materials under different growth pressures, well-aligned hexagonal-shaped ZnO nanorod arrays were obtained under both conditions. X-ray diffraction (XRD) analysis confirmed the nanorods are c-axis orientated. Selected area electron diffraction (SAED) and transmission electron microscopy (TEM) analysis demonstrated the individual nanorod is single crystal. Photoluminescence (PL) analyses show the superior optical properties of the nanorod arrays.

  6. ZnO nanorod arrays grown under different pressures and their photoluminescence properties

    International Nuclear Information System (INIS)

    Meng Xiuqing; Zhao Dongxu; Shen Dezhen; Zhang Jiying; Li Binghui; Wang Xiaohua; Fan Xiwu

    2007-01-01

    The ZnO nanorod arrays were synthesized via a simple vapor deposition method on Si (1 1 1) substrates at a low growth temperature of 520 deg. C. By selecting different source materials under different growth pressures, well-aligned hexagonal-shaped ZnO nanorod arrays were obtained under both conditions. X-ray diffraction (XRD) analysis confirmed the nanorods are c-axis orientated. Selected area electron diffraction (SAED) and transmission electron microscopy (TEM) analysis demonstrated the individual nanorod is single crystal. Photoluminescence (PL) analyses show the superior optical properties of the nanorod arrays

  7. Polarity effects in the x-ray photoemission of ZnO and other wurtzite semiconductors

    International Nuclear Information System (INIS)

    Allen, M. W.; Zemlyanov, D. Y.; Waterhouse, G. I. N.; Metson, J. B.; Veal, T. D.; McConville, C. F.; Durbin, S. M.

    2011-01-01

    Significant polarity-related effects were observed in the near-surface atomic composition and valence band electronic structure of ZnO single crystals, investigated by x-ray photoemission spectroscopy using both Al K α (1486.6 eV) and synchrotron radiation (150 to 1486 eV). In particular, photoemission from the lowest binding energy valence band states was found to be significantly more intense on the Zn-polar face compared to the O-polar face. This is a consistent effect that can be used as a simple, nondestructive indicator of crystallographic polarity in ZnO and other wurtzite semiconductors.

  8. Three-Dimensional ZnO Hierarchical Nanostructures: Solution Phase Synthesis and Applications

    Directory of Open Access Journals (Sweden)

    Xiaoliang Wang

    2017-11-01

    Full Text Available Zinc oxide (ZnO nanostructures have been studied extensively in the past 20 years due to their novel electronic, photonic, mechanical and electrochemical properties. Recently, more attention has been paid to assemble nanoscale building blocks into three-dimensional (3D complex hierarchical structures, which not only inherit the excellent properties of the single building blocks but also provide potential applications in the bottom-up fabrication of functional devices. This review article focuses on 3D ZnO hierarchical nanostructures, and summarizes major advances in the solution phase synthesis, applications in environment, and electrical/electrochemical devices. We present the principles and growth mechanisms of ZnO nanostructures via different solution methods, with an emphasis on rational control of the morphology and assembly. We then discuss the applications of 3D ZnO hierarchical nanostructures in photocatalysis, field emission, electrochemical sensor, and lithium ion batteries. Throughout the discussion, the relationship between the device performance and the microstructures of 3D ZnO hierarchical nanostructures will be highlighted. This review concludes with a personal perspective on the current challenges and future research.

  9. Enhanced Raman scattering and nonlinear conductivity in Ag-doped hollow ZnO microspheres

    Energy Technology Data Exchange (ETDEWEB)

    Tringe, Joseph W.; Levie, Harold W.; McCall, Scott K.; Teslich, Nick E.; Wall, Mark A.; Orme, Christine A.; Matthews, Manyalibo J. [Lawrence Livermore National Laboratory, Livermore, CA (United States)

    2012-10-15

    Hollow spherical ZnO particles doped with Ag were synthesized with a two-step oxidation and sublimation furnace annealing process. Ag nanoparticle precipitates, as observed by transmission electron microscopy, were present in the polycrystalline ZnO matrix at Ag concentrations below 0.02 mol%, significantly below the 0.8 mol% solubility limit for Ag in ZnO. Enhanced Raman scattering of ZnO phonon modes is observed, increasing with Ag nanoparticle concentration. A further enhancement in Raman scattering due to resonance effects was observed for LO phonons excited by 2.33-eV photons as compared with Raman scattering under 1.96-eV excitation. Room-temperature photoluminescence spectra showed both a near-band-edge emission due to free exciton transitions and a mid-gap transition due to the presence of singly ionized oxygen vacancies. ZnO:Ag particles were measured electrically in a packed column and in monolithic form, and in both cases displayed nonlinear current-voltage characteristics similar to those previously observed in sintered ZnO:Ag monoliths where Ag-enhanced disorder at grain boundaries is thought to control current transport. We demonstrate therefore that Ag simultaneously modifies the electrical and optical properties of ZnO particles through the introduction of vacancies and other defects. (orig.)

  10. Synthesis, effect of capping agents, structural, optical and photoluminescence properties of ZnO nanoparticles

    International Nuclear Information System (INIS)

    Singh, A.K.; Viswanath, V.; Janu, V.C.

    2009-01-01

    Zinc oxide nanoparticles were synthesized using chemical method in alcohol base. During synthesis three capping agents, i.e. triethanolamine (TEA), oleic acid and thioglycerol, were used and the effect of concentrations was analyzed for their effectiveness in limiting the particle growth. Thermal stability of ZnO nanoparticles prepared using TEA, oleic acid and thioglycerol capping agents, was studied using thermogravimetric analyzer (TGA). ZnO nanoparticles capped with TEA showed maximum weight loss. X-ray diffraction (XRD) and scanning electron microscopy (SEM) were used for structural and morphological characterization of ZnO nanoparticles. Particle size was evaluated using effective mass approximation method from UV-vis spectroscopy and Scherrer's formula from XRD patterns. XRD analysis revealed single crystal ZnO nanoparticles of size 12-20 nm in case of TEA capping. TEA, oleic acid and thioglycerol capped synthesized ZnO nanoparticles were investigated at room temperature photoluminescence for three excitation wavelengths i.e. 304, 322 and 325 nm, showing strong peaks at about 471 nm when excited at 322 and 325 nm whereas strong peak was observed at 411 for 304 nm excitation.

  11. Twinning in ZnO ceramics with Sb sub 2 O sub 3 additions

    Energy Technology Data Exchange (ETDEWEB)

    Senda, T. (Ministry of Transportation, Tokyo (Japan). Ship Research Inst.); Bradt, R.C. (Univ. of Nevada-Reno, Nevada (U.S.A.). Mackay School of Mines)

    1991-09-01

    A mechanism is proposed for the nucleation of ZnO growth twins which is based on the crystallography of the wurtzite and spinel structures. In this paper, possible twin origins from either phase transformation or a result of deformation are both rejected. It is concluded that the ZnO twins are growth twins which nucleate in the early stages of sintering and grain growth of the ceramic powder compacts. Consideration of the oxygen anion stacking layer sequences in the hexagonal ZnO wurtzite structure and the cubic Zn {sub 7} Sb {sub 2} O {sub 12} spinel structure suggests that the nuclei for the twins may form as embryos consisting of a faulted region of the spinel-oxygen anion layer stacking sequence. And then, the faulted layer sequence is created by the presence of the antimony oxide and its reaction with the ZnO. Further, the fact that the wurtzite structure is polar and the ZnO twins are inversion twins explains why there is only a single twin per grain, as multiple twins would result in the unfavorable structural configuration. 24 refs., 2 figs.

  12. Synthesis and self-assembly of dumbbell shaped ZnO sub-micron structures using low temperature chemical bath deposition technique

    Energy Technology Data Exchange (ETDEWEB)

    Borade, P. [National Centre for Nanoscience and Nanotechnology, University of Mumbai, Kalina Campus, Santacruz (E), Mumbai 400098 (India); Joshi, K.U. [Anton-Paar India Pvt. Ltd., Thane (W), 400607 (India); Gokarna, A.; Lerondel, G. [Laboratoire de Nanotechnologie et D' Instrumentation Optique, Institut Charles Delaunay, CNRS UMR 6281, Université de Technologie de Troyes, 12 Rue Marie Curie, BP 2060, 10010 Troyes (France); Walke, P. [National Centre for Nanoscience and Nanotechnology, University of Mumbai, Kalina Campus, Santacruz (E), Mumbai 400098 (India); Late, D. [National Chemical Laboratory (NCL), Pune 400027 (India); Jejurikar, S.M., E-mail: jejusuhas@gmail.com [National Centre for Nanoscience and Nanotechnology, University of Mumbai, Kalina Campus, Santacruz (E), Mumbai 400098 (India)

    2016-02-01

    We report well dispersed horizontal growth of ZnO sub-micron structures using simplest technique ever known i.e. chemical bath deposition (CBD). A set of samples were prepared under two different cases A) dumbbell shaped ZnO grown in CBD bath and B) tubular ZnO structures evolved from dumbbell shaped structures by dissolution mechanism. Single phase wurtzite ZnO formation is confirmed using X-ray diffraction (XRD) technique in both cases. From the morphological investigations performed using scanning electron microscopy (SEM), sample prepared under case A indicate formation of hex bit tool (HBT) shaped ZnO crystals, which observed to self-organize to form dumbbell structures. Further these microstructures are then converted into tubular structures as a fragment of post CBD process. The possible mechanism responsible for the self-assembly of HBT units to form dumbbell structures is discussed. Observed free excitonic peak located at 370 nm in photoluminescence (PL) spectra recorded at 18 K indicate that the micro/nanostructures synthesized using CBD are of high optical quality. - Highlights: • Controlled growth of Dumbbell shaped ZnO using Chemical Bath Deposition (CBD). • Growth mechanism of dumbbell shaped ZnO by self-assembling was discussed. • Quick Transformation of ZnO dumbbell structures in to tubular structures by dissolution. • Sharp UV Emission at 370 nm from both dumbbell and tubular structures.

  13. Improved ITO thin films for photovoltaic applications with a thin ZnO layer by sputtering

    International Nuclear Information System (INIS)

    Herrero, J.; Guillen, C.

    2004-01-01

    The improvement of the optical and electrical characteristics of indium tin oxide (ITO) layers is pursued to achieve a higher efficiency in its application as frontal electrical contacts in thin film photovoltaic devices. In order to take advantage of the polycrystalline structure of ZnO films as growth support, the properties of ITO layers prepared at room temperature by sputtering onto bare and ZnO-coated substrates have been analyzed using X-ray diffraction, optical and electrical measurements. It has been found that by inserting a thin ZnO layer, the ITO film resistivity can be reduced as compared to that of a single ITO film with similar optical transmittance. The electrical quality improvement is related to ITO grain growth enhancement onto the polycrystalline ZnO underlayer

  14. Absorptive lasing mode suppression in ZnO nano- and microcavities

    Energy Technology Data Exchange (ETDEWEB)

    Wille, M.; Michalsky, T.; Krüger, E.; Grundmann, M.; Schmidt-Grund, R. [Universität Leipzig, Institut für Experimentelle Physik II, Linnéstraße 5, 04103 Leipzig (Germany)

    2016-08-08

    We conclusively explain the different lasing mode energies in ZnO nano- and microcavities observed by us and reported in literature. The limited penetration depth of usually used excitation lasers results in an inhomogeneous spatial gain region depending on the structure size and geometry. Hence, weakly or even nonexcited areas remain present after excitation, where modes are instantaneously suppressed by excitonic absorption. We compare the effects for ZnO microwires, nanowires, and tetrapod-like structures at room temperature and demonstrate that the corresponding mode selective effect is most pronounced for whispering-gallery modes in microwires with a hexagonal cross section. Furthermore, the absorptive lasing mode suppression will be demonstrated by correlating the spot size of the excitation laser and the lasing mode characteristic of a single ZnO nanowire.

  15. Thermal growth and cathodoluminescence of Bi doped ZnO nanowires and rods

    International Nuclear Information System (INIS)

    Aleman, B; Hidalgo, P; Fernandez, P; Piqueras, J

    2009-01-01

    Bi doped ZnO nanowires and rods have been grown by a catalyst free evaporation-deposition method with precursors containing either ZnO and Bi 2 O 3 or ZnS and Bi 2 O 3 powders. The use of ZnS as a precursor was found to lead to a higher density of nano- and microstructures at lower temperatures than by using ZnO. Energy dispersive x-ray spectroscopy (EDS) shows that the Bi content in the wires and rods is in the range 0.15-0.35 at%. Bi incorporation was found to induce a red shift of the near band gap luminescence but no quantitative correlation between the shift and the amount of Bi, as measured by EDS, was observed. The I-V curves of single Bi doped wires had linear behaviour at low current and non-linear behaviour for high currents, qualitatively similar to that of undoped wires.

  16. Damage annealing in low temperature Fe/Mn implanted ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Gunnlaugsson, H. P. [University of Aarhus, Department of Physics and Astronomy (Denmark); Bharuth-Ram, K., E-mail: kbr@tlabs.ac.za [Durban University of Technology, Physics Department (South Africa); Johnston, K. [PH Department, ISOLDE/CERN (Switzerland); Langouche, G. [University of Leuven, Instituut voor Kern-en Stralings fysika (Belgium); Mantovan, R. [Laboratorio MDM, IMM-CNR (Italy); Mølholt, T. E. [University of Iceland, Science Institute (Iceland); Naidoo, D. [University of the Witwatersrand, School of Physics (South Africa); Ólafsson, O. [University of Iceland, Science Institute (Iceland); Weyer, G. [University of Aarhus, Department of Physics and Astronomy (Denmark)

    2015-04-15

    {sup 57}Fe Emission Mössbauer spectra obtained after low fluence (<10{sup 12} cm {sup −2}) implantation of {sup 57}Mn (T{sub 1/2}= 1.5 min.) into ZnO single crystal held at temperatures below room temperature (RT) are presented. The spectra can be analysed in terms of four components due to Fe {sup 2+} and Fe {sup 3+} on Zn sites, interstitial Fe and Fe in damage regions (Fe {sub D}). The Fe {sub D} component is found to be indistinguishable from similar component observed in emission Mössbauer spectra of higher fluence (∼10{sup 15} cm {sup −2}){sup 57}Fe/ {sup 57}Co implanted ZnO and {sup 57}Fe implanted ZnO, demonstrating that the nature of the damage regions in the two types of experiments is similar. The defect component observed in the low temperature regime was found to anneal below RT.

  17. Damage annealing in low temperature Fe/Mn implanted ZnO

    International Nuclear Information System (INIS)

    Gunnlaugsson, H. P.; Bharuth-Ram, K.; Johnston, K.; Langouche, G.; Mantovan, R.; Mølholt, T. E.; Naidoo, D.; Ólafsson, O.; Weyer, G.

    2015-01-01

    57 Fe Emission Mössbauer spectra obtained after low fluence (<10 12 cm −2 ) implantation of 57 Mn (T 1/2 = 1.5 min.) into ZnO single crystal held at temperatures below room temperature (RT) are presented. The spectra can be analysed in terms of four components due to Fe 2+ and Fe 3+ on Zn sites, interstitial Fe and Fe in damage regions (Fe D ). The Fe D component is found to be indistinguishable from similar component observed in emission Mössbauer spectra of higher fluence (∼10 15 cm −2 ) 57 Fe/ 57 Co implanted ZnO and 57 Fe implanted ZnO, demonstrating that the nature of the damage regions in the two types of experiments is similar. The defect component observed in the low temperature regime was found to anneal below RT

  18. A two-step obtainment of quantum confinement in ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Mofor, A C; El-Shaer, A; Suleiman, M; Bakin, A; Waag, A [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany)

    2006-10-14

    ZnO nanorod-based single quantum well heterostructures were fabricated in a two-step process. Nanorods were first grown using vapour transport. Subsequently, high-quality ZnO/Zn{sub 0.85}Mg{sub 0.15}O heterostructures were grown on the nanorods using molecular beam epitaxy. The nanorods are well aligned along the c-axis of ZnO, as indicated by a very narrow rocking curve full width at half maximum. Quantum confinement was clearly observed within the ZnO well for different well widths. The quantum wells show photoluminescence peaks with a full width at half maximum as small as 15 meV.

  19. Double-layered ZnO nanostructures for efficient perovskite solar cells

    KAUST Repository

    Mahmood, Khalid; S. Swain, Bhabani; Amassian, Aram

    2014-01-01

    To date, a single layer of TiO2 or ZnO has been the most successful implementations of any electron transport layer (ETL) in solution-processed perovskite solar cells. In a quest to improve the ETL, we explore a new nanostructured double-layer ZnO film for mesoscopic perovskite-based thin film photovoltaics. This approach yields a maximum power conversion efficiency of 10.35%, which we attribute to the morphology of oxide layer and to faster electron transport. The successful implementation of the low-temperature hydrothermally processed double-layer ZnO film as ETL in perovskite solar cells highlights the opportunities to further improve the efficiencies by focusing on the ETL in this rapidly developing field. This journal is

  20. Zinc Vacancy Formation and its Effect on the Conductivity of ZnO

    Science.gov (United States)

    Khan, Enamul; Weber, Marc; Langford, Steve; Dickinson, Tom

    2010-03-01

    Exposing single crystal ZnO to 193-nm ArF excimer laser radiation can produce metallic zinc nanoparticles along the surface. The particle production mechanism appears to involve interstitial-vacancy pair formation in the near-surface bulk. Conductivity measurements made with one probe inside the laser spot and the other outside show evidence for rectifying behavior. Positron annihilation spectroscopy confirms the presence of Zn vacancies. We suggest that Zn vacancies are a possible source of p-type behavior in irradiated ZnO. Quadrupole mass spectroscopy shows that both oxygen and zinc are emitted during irradiation. Electron-hole pair production has previously been invoked to account for particle desorption from ZnO during UV illumination. Our results suggest that preexisting and laser-generated defects play a critical role in particle desorption and Zn vacancy formation.

  1. Temperature dependent optical properties of (002) oriented ZnO thin film using surface plasmon resonance

    Science.gov (United States)

    Saha, Shibu; Mehan, Navina; Sreenivas, K.; Gupta, Vinay

    2009-08-01

    Temperature dependent optical properties of c-axis oriented ZnO thin film were investigated using surface plasmon resonance (SPR) technique. SPR data for double layer (prism-Au-ZnO-air) and single layer (prism-Au-air) systems were taken over a temperature range (300-525 K). Dielectric constant at optical frequency and real part of refractive index of the ZnO film shows an increase with temperature. The bandgap of the oriented ZnO film was found to decrease with rise in temperature. The work indicates a promising application of the system as a temperature sensor and highlights an efficient scientific tool to study optical properties of thin film under varying ambient conditions.

  2. Structure, interface, and luminescence of (011-bar1) ZnO nanofilms

    International Nuclear Information System (INIS)

    Shen, Jung-Hsiung; Yeh, Sung-Wei; Huang, Hsing-Lu; Gan, Dershin

    2010-01-01

    ZnO nanofilms of (011-bar1) texture have been prepared by ion beam sputtering on the (001) surface of single-crystal NaCl. The orientation relationship between them is determined by transmission electron microscopy. Analyses of electron diffraction patterns and interface confirm that the ZnO (011-bar1) plane is the interface with the NaCl (001) surface. The photoluminescence spectrum from the ZnO (011-bar1) surface shows a near-band-edge UV emission and a broad green emission. The result indicates that the inherent high surface defects of oxygen vacancies on the (011-bar1) surface are the probable origin of the green emission.

  3. Development of ZnO based charged particle monitor for processing facility

    International Nuclear Information System (INIS)

    Yanagida, Takayuki; Kawaguchi, Noriaki; Fujimoto, Yutaka

    2011-01-01

    In the present paper, we describe the development of an α-ray imaging detector based on a ZnO single crystalline scintillator and a position-sensitive photomultiplier tube (PSPMT). The ZnO crystal was grown by the hydrothermal synthesis method with 2-in.-φ in diameter. The ZnO specimen was polished but to be 0.5 mm in thickness. After optically coupling with PSPMT, the crystal was irradiated with, 241 Am α-ray for evaluation of both spatial resolution and pulse height spectrum. Using the charge center of the gravity method, two-dimensional α-ray images were successfully obtained. The efficiency of the energy window in terms of imaging quality was also examined. (author)

  4. Properties of V-implanted ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Schlenker, E [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Bakin, A [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Schmid, H [Institut fuer Anorganische Chemie, University of Bonn, Roemerstrasse 164, 53117 Bonn (Germany); Mader, W [Institut fuer Anorganische Chemie, University of Bonn, Roemerstrasse 164, 53117 Bonn (Germany); Sievers, S [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany); Albrecht, M [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany); Ronning, C [II. Institute of Physics, Georg-August-University Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany); Mueller, S [II. Institute of Physics, Georg-August-University Goettingen, Friedrich-Hund-Platz 1, 37077 Goettingen (Germany); Al-Suleiman, M [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Postels, B [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Wehmann, H-H [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Siegner, U [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany); Waag, A [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany)

    2007-03-28

    ZnO nanorods were grown on Si substrates by an aqueous chemical approach and subsequently doped by V implantation. Transmission electron microscopy and photoluminescence spectroscopy reveal a severely defective material directly after the implantation process. Subsequent annealing leads to a partial recovery of the crystal structure. The magnetic features of ZnO:V nanorods were investigated by magnetic force microscopy. Images taken of ensembles as well as of single rods clearly display contrast, which is seen as a strong indication of ferromagnetism at room temperature.

  5. Negative thermal quenching of photoluminescence in ZnO

    International Nuclear Information System (INIS)

    Watanabe, M.; Sakai, M.; Shibata, H.; Satou, C.; Satou, S.; Shibayama, T.; Tampo, H.; Yamada, A.; Matsubara, K.; Sakurai, K.; Ishizuka, S.; Niki, S.; Maeda, K.; Niikura, I.

    2006-01-01

    We have studied photoluminescence (PL) spectra of ZnO single crystals at photon energies ranging between 2.1 and 3.4eV as a function of temperature to determine thermal quenching behavior in PL emission intensity. It appears that the deep level emissions, donor-acceptor pair emissions, and the bound excitonic emissions undergo negative thermal quenching (NTQ) at intermediate temperatures above ∼10K. By employing an NTQ formula expressed analytically as a function of temperature, we have obtained quantitative NTQ characteristics in terms of the activation energies associated with the intermediate states as well as nonradiative channels

  6. ZnO nanocrystals and allied materials

    CERN Document Server

    Okada, Tatsuo

    2014-01-01

    ZnO has been the central theme of research in the past decade due to its various applications in band gap engineering, and textile and biomedical industries. In nanostructured form, it offers ample opportunities to realize tunable optical and optoelectronic properties and it was also termed as a potential material to realize room temperature ferromagnetism. This book presents 17 high-quality contributory chapters on ZnO related systems written by experts in this field. These chapters will help researchers to understand and explore the varied physical properties to envisage device applications of ZnO in thin film, heterostructure and nanostructure forms.

  7. NW-MILO Acoustic Data Collection

    Energy Technology Data Exchange (ETDEWEB)

    Matzner, Shari; Myers, Joshua R.; Maxwell, Adam R.; Jones, Mark E.

    2010-02-17

    There is an enduring requirement to improve our ability to detect potential threats and discriminate these from the legitimate commercial and recreational activity ongoing in the nearshore/littoral portion of the maritime domain. The Northwest Maritime Information and Littoral Operations (NW-MILO) Program at PNNL’s Coastal Security Institute in Sequim, Washington is establishing a methodology to detect and classify these threats - in part through developing a better understanding of acoustic signatures in a near-shore environment. The purpose of the acoustic data collection described here is to investigate the acoustic signatures of small vessels. The data is being recorded continuously, 24 hours a day, along with radar track data and imagery. The recording began in August 2008, and to date the data contains tens of thousands of signals from small vessels recorded in a variety of environmental conditions. The quantity and variety of this data collection, with the supporting imagery and radar track data, makes it particularly useful for the development of robust acoustic signature models and advanced algorithms for signal classification and information extraction. The underwater acoustic sensing system is part of a multi-modal sensing system that is operating near the mouth of Sequim Bay. Sequim Bay opens onto the Straight of Juan de Fuca, which contains part of the border between the U.S. and Canada. Table 1 lists the specific components used for the NW-MILO system. The acoustic sensor is a hydrophone permanently deployed at a mean depth of about 3 meters. In addition to a hydrophone, the other sensors in the system are a marine radar, an electro-optical (EO) camera and an infra-red (IR) camera. The radar is integrated with a vessel tracking system (VTS) that provides position, speed and heading information. The data from all the sensors is recorded and saved to a central server. The data has been validated in terms of its usability for characterizing the

  8. Mercury concentrations in cattle from NW Spain.

    Science.gov (United States)

    López Alonso, M; Benedito, J L; Miranda, M; Castillo, C; Hernández, J; Shore, R F

    2003-01-20

    Mercury is a toxic metal that is released into the environment as a result of various industrial and agricultural processes. It can be accumulated by domestic animals and so contaminate human foodstuffs. To date, there is no information on mercury residues in livestock in Spain and the aim of the present study was to quantify the concentrations of mercury in cattle in two of the major regions in north-west Spain, Galicia (a largely rural region) and Asturias, which is characterised by heavy industry and mining. Total mercury concentrations were determined in tissue (liver, kidney and muscle) and blood from 284 calves (6-10 months old) and 56 cows (2-16 years old) from across the whole of the two regions. Mercury was usually detected in the kidney (62.4-87.5% of samples) but most (79.5-96%) liver, muscle and blood samples did not contain detectable residues. Renal mercury concentrations did not differ between male and female calves but were significantly greater in female calves than in cows. Unexpectedly, kidney mercury concentrations were significantly higher in calves from the predominantly rural region of Galicia (geometric mean: 12.2 microg/kg w.wt.) than in animals from the industrialised-mining region of Asturias (3.40 microg/kg w.wt.). Overall, mercury residues in cattle from NW Spain were similar to those reported in cattle from non-polluted areas in other countries and do not constitute a risk to animal or human health. Copyright 2002 Elsevier Science B.V.

  9. Intrinsic defects in ZnO varistors

    International Nuclear Information System (INIS)

    Mahan, G.D.

    1983-01-01

    Theoretical calculations are presented for equilibrium concentrations of zinc and oxygen vacancies in ZnO. Results are presented at the sintering temperature, and also at room temperature. Theoretical calculations of reaction constants show that the intrinsic donor is the oxygen vacancy, rather than the zinc interstitial. The depletion of vacancies in the surface region, as the ZnO is cooled from the sintering temperature, is also calculated. Homojunction effects which are caused by such depletion are shown to be small

  10. Fabrication and Characterization of ZnO Nanowire-based Piezoelectric Nanogenerators for Low Frequency Mechanical Energy Harvesting

    Science.gov (United States)

    Poulin-Vittrant, G.; Oshman, C.; Opoku, C.; Dahiya, A. S.; Camara, N.; Alquier, D.; Hue, L.-P. Tran Huu; Lethiecq, M.

    The present work investigates the possibility to charge a Lithium micro-battery (LiB) via direct conversion of ambient mechanical energy into electricity using piezoelectric ZnO nanowire (NW) based microgenerators (PGs). An estimate is provided for the power levels at the different stages of mechanical-to-electrical energy conversion chain, in the following areas: (1) PG output, (2) power management block and (3) LiB storage unit. Also covered in this work is the synthesis, which is a prerequisite for realising such PGs. ZnO NWs of 2 μm in length and 200 nm in diameter have been grown using a low temperature (PET substrates (25 × 25 mm2). Substrates containing bi-layer metal layers with dissimilar electro-negativities functioned as a galvanic cell in the growth nutrients, which acted as an electrolyte medium. This necessitated ZnO NWs growth on conductive surfaces, even in the absence of seed layers and/or substrate with specific lattice parameters. Finally, the assembly steps undertaken to realise the fully functional PGs are discussed, and the performances of the final PG are described thereafter. Subjecting such devices to a 10 Hz sinusoidal bending force resulted in a measured PG output of ∼56 mV peak to peak, on 1 MΩ resistive load.

  11. Atomic-resolution studies of In2O3-ZnO compounds on aberration-corrected electron microscopes

    International Nuclear Information System (INIS)

    Yu, Wentao

    2009-01-01

    In this work, the characteristic inversion domain microstructures of In 2 O 3 (ZnO) m (m=30) compounds were investigated by TEM methods. At bright-atom contrast condition, atomically resolved HR-TEM images of In 2 O 3 (ZnO) 30 were successfully acquired in [1 anti 100] zone axis of ZnO, with projected metal columns of ∝1.6 A well resolved. From contrast maxima in the TEM images, local lattice distortions at the pyramidal inversion domain boundaries were observed for the first time. Lattice displacements and the strain field in two-dimensions were visualized and measured using the 'DALI' algorithm. Atomically resolved single shot and focal series images of In 2 O 3 (ZnO) 30 were achieved in both zone axes of ZnO, [1 anti 100] and [2 anti 1 anti 10], respectively. The electron waves at the exit-plane were successfully reconstructed using the software package 'TrueImage'. Finally, a three dimensional atomic structure model for the pyramidal IDB was proposed, with an In distribution of 10%, 20%, 40%, 20% and 10% of In contents over 5 atom columns along basal planes, respectively. Through a detailed structural study of In 2 O 3 (ZnO) m compounds by using phase-contrast and Z-contrast imaging at atomic resolution, In 3+ atoms are determined with trigonal bi-pyramidal co-ordination and are distributed at the pyramidal IDBs. (orig.)

  12. Synthesis and Characterization of Flower-Like Bundles of ZnO Nanosheets by a Surfactant-Free Hydrothermal Process

    Directory of Open Access Journals (Sweden)

    Jijun Qiu

    2014-01-01

    Full Text Available Flower-like bundles of ZnO nanosheets have been prepared by using preheating hydrothermal process without any surfactants. The flower-like bundles consist of many thin and uniform hexagonal-structured ZnO nanosheets, with a thickness of 50 nm. The selected area electronic diffraction (SAED and high-resolution transmission electron microscope (HRTEM images indicate that the ZnO nanosheets are single crystal in nature. The growth mechanism of the flower-like bundles of ZnO nanosheets is discussed based on the morphology evolution with growth times and reaction conditions. It is believed that the formation of flower-like bundles of ZnO nanosheets is related to the shielding effect of OH− ions and the self-assembly process, which is dominated by a preheating time. Room temperature photoluminescence spectra results show that the annealing atmosphere strongly affects the visible emission band, which is sensitive to intrinsic and surface defects, especially oxygen interstitials, in flower-like bundles of ZnO nanosheets.

  13. Efficiency of Nb-Doped ZnO Nanoparticles Electrode for Dye-Sensitized Solar Cells Application

    Science.gov (United States)

    Anuntahirunrat, Jirapat; Sung, Youl-Moon; Pooyodying, Pattarapon

    2017-09-01

    The technological of Dye-sensitized solar cells (DSSCs) had been improved for several years. Due to its simplicity and low cost materials with belonging to the part of thin films solar cells. DSSCs have numerous advantages and benefits among the other types of solar cells. Many of the DSSC devices had use organic chemical that produce by specific method to use as thin film electrodes. The organic chemical that widely use to establish thin film electrodes are Zinc Oxide (ZnO), Titanium Dioxide (TiO2) and many other chemical substances. Zinc oxide (ZnO) nanoparticles had been used in DSSCs applications as thin film electrodes. Nanoparticles are a part of nanomaterials that are defined as a single particles 1-100 nm in diameter. From a few year ZnO widely used in DSSC applications because of its optical, electrical and many others properties. In particular, the unique properties and utility of ZnO structure. However the efficiency of ZnO nanoparticles based solar cells can be improved by doped various foreign impurity to change the structures and properties. Niobium (Nb) had been use as a dopant of metal oxide thin films. Using specification method to doped the ZnO nanoparticles thin film can improved the efficiencies of DSSCs. The efficiencies of Nb-doped ZnO can be compared by doping 0 at wt% to 5 at wt% in ZnO nanoparticles thin films that prepared by the spin coating method. The thin film electrodes doped with 3 at wt% represent a maximum efficiencies with the lowest resistivity of 8.95×10-4 Ω·cm.

  14. Characterization of radiation-induced defects in ZnO probed by positron annihilation spectroscopy

    International Nuclear Information System (INIS)

    Brunner, S.; Puff, W.; Balogh, A.G.; Mascher, P.

    2001-01-01

    In this study we discuss the microstructural changes after electron and proton irradiation and the thermal evolution of the radiation induced defects during isochronal annealing of single crystals irradiated either with 3 MeV protons or with 1 or 2 MeV electrons, respectively. The investigations were performed with positron lifetime and Doppler-broadening measurements. The differently grown ZnO single crystals show positron bulk lifetimes in the range of 159-173 ps. (orig.)

  15. Characterization of radiation-induced defects in ZnO probed by positron annihilation spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Brunner, S.; Puff, W. [Technische Univ. Graz (Austria). Inst. fuer Technische Physik; Balogh, A.G. [Technische Hochschule Darmstadt (Germany). FB Materialwissenschaft; Mascher, P. [McMaster Univ., Hamilton, ON (Canada). Dept. of Engineering Physics

    2001-07-01

    In this study we discuss the microstructural changes after electron and proton irradiation and the thermal evolution of the radiation induced defects during isochronal annealing of single crystals irradiated either with 3 MeV protons or with 1 or 2 MeV electrons, respectively. The investigations were performed with positron lifetime and Doppler-broadening measurements. The differently grown ZnO single crystals show positron bulk lifetimes in the range of 159-173 ps. (orig.)

  16. Growth of vertically aligned ZnO nanorods using textured ZnO films

    Directory of Open Access Journals (Sweden)

    Meléndrez Manuel

    2011-01-01

    Full Text Available Abstract A hydrothermal method to grow vertical-aligned ZnO nanorod arrays on ZnO films obtained by atomic layer deposition (ALD is presented. The growth of ZnO nanorods is studied as function of the crystallographic orientation of the ZnO films deposited on silicon (100 substrates. Different thicknesses of ZnO films around 40 to 180 nm were obtained and characterized before carrying out the growth process by hydrothermal methods. A textured ZnO layer with preferential direction in the normal c-axes is formed on substrates by the decomposition of diethylzinc to provide nucleation sites for vertical nanorod growth. Crystallographic orientation of the ZnO nanorods and ZnO-ALD films was determined by X-ray diffraction analysis. Composition, morphologies, length, size, and diameter of the nanorods were studied using a scanning electron microscope and energy dispersed x-ray spectroscopy analyses. In this work, it is demonstrated that crystallinity of the ZnO-ALD films plays an important role in the vertical-aligned ZnO nanorod growth. The nanorod arrays synthesized in solution had a diameter, length, density, and orientation desirable for a potential application as photosensitive materials in the manufacture of semiconductor-polymer solar cells. PACS 61.46.Hk, Nanocrystals; 61.46.Km, Structure of nanowires and nanorods; 81.07.Gf, Nanowires; 81.15.Gh, Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.

  17. Synthesis of 1-D ZnO nanorods and polypyrrole/1-D ZnO ...

    Indian Academy of Sciences (India)

    1-D ZnO nanorods and PPy/1-D ZnO nanocomposites were prepared by the surfactant-assisted precipitation and in situ polymerization method, respectively. The synthesized nanorods and nanocomposites were characterized by UV–Vis spectrophotometer, Fourier transform-infrared spectroscopy (FTIR), X-ray diffraction ...

  18. Highly Uniform Epitaxial ZnO Nanorod Arrays for Nanopiezotronics

    Directory of Open Access Journals (Sweden)

    Nagata T

    2009-01-01

    Full Text Available Abstract Highly uniform and c-axis-aligned ZnO nanorod arrays were fabricated in predefined patterns by a low temperature homoepitaxial aqueous chemical method. The nucleation seed patterns were realized in polymer and in metal thin films, resulting in, all-ZnO and bottom-contacted structures, respectively. Both of them show excellent geometrical uniformity: the cross-sectional uniformity according to the scanning electron micrographs across the array is lower than 2%. The diameter of the hexagonal prism-shaped nanorods can be set in the range of 90–170 nm while their typical length achievable is 0.5–2.3 μm. The effect of the surface polarity was also examined, however, no significant difference was found between the arrays grown on Zn-terminated and on O-terminated face of the ZnO single crystal. The transmission electron microscopy observation revealed the single crystalline nature of the nanorods. The current–voltage characteristics taken on an individual nanorod contacted by a Au-coated atomic force microscope tip reflected Schottky-type behavior. The geometrical uniformity, the designable pattern, and the electrical properties make the presented nanorod arrays ideal candidates to be used in ZnO-based DC nanogenerator and in next-generation integrated piezoelectric nano-electromechanical systems (NEMS.

  19. Hydrogen in ZnO - a challenge to experiments and theory

    Energy Technology Data Exchange (ETDEWEB)

    Brauer, Gerhard [Forschungszentrum Dresden-Rossendorf e.V., Dresden (Germany); Kuriplach, Jan [Charles University, Prague (Czech Republic)

    2008-07-01

    Positron lifetime spectroscopy, nuclear reaction analysis and X-ray diffraction have been combined to investigate various, nominally undoped, ZnO single crystals. Hydrogen is detected in all crystals in a bound state (0.3-0.8 at.-%), and in some cases also in an unbound state (0.7-1.9 at.-%), which can be removed by annealing. A single positron lifetime of 180-182 ps and 165-167 ps is measured for all hydrothermally and melt grown crystals, respectively. These lifetimes are attributed to zinc vacancy-hydrogen complexes, as deduced from ab initio studies of various vacancy-hydrogen defect configurations in ZnO and related positron calculations. In addition, various defect studies of hydrothermally grown (0001) oriented ZnO crystals electrochemically doped with hydrogen are presented. It is demonstrated that a very high amount of hydrogen (up to {proportional_to}30 at.-%) can be introduced into the crystals by electrochemical doping. It is found that more than half of this amount is chemically bound, i.e. incorporated into the ZnO crystal lattice.

  20. Magnetic and optical properties of Mn-doped ZnO vertically aligned nanorods synthesized by hydrothermal technique

    Energy Technology Data Exchange (ETDEWEB)

    Panda, J.; Sasmal, I.; Nath, T. K., E-mail: tnath@phy.iitkgp.ernet.in, E-mail: tapnath@gmail.com [Department of Physics, Indian Institute Technology Kharagpur, West Bengal, 721302 (India)

    2016-03-15

    In this paper we have reported the synthesis of high quality vertically aligned undoped and Mn-doped ZnO single crystalline nanorods arrays on Si (100) substrates using two steps process, namely, initial slow seed layer formation followed by solution growth employing wet chemical hydrothermal method. The shapes of the as grown single crystalline nanorods are hexagonal. The diameter and length of the as grown undoped ZnO nanorods varies in the range of 80-150 nm and 1.0 - 1.4 μm, respectively. Along with the lattice parameters of the hexagonal crystal structure, the diameter and length of Mn doped ZnO nanorods are found to increase slightly as compared to the undoped ZnO nanorods. The X-ray photoelectron spectroscopy confirms the presence of Mn atoms in Mn{sup 2+} state in the single crystalline ZnO nanorods. The recorded photoluminescence spectrum contains two emissions peaks having UV exciton emissions along with a green-yellow emission. The green-yellow emissions provide the evidence of singly ionized oxygen vacancies. The magnetic field dependent magnetization measurements [M (H)] and zero field cooled (ZFC) and field cooled (FC) magnetization [M(T)] measurements have been carried out at different isothermal conditions in the temperature range of 5-300 K. The Mn doped ZnO nanorods clearly show room temperature ferromagnetic ordering near room temperature down to 5 K. The observed magnetization may be attributed to the long range ferromagnetic interaction between bound magnetic polarons led by singly charged oxygen vacancies.

  1. Morphology engineering of ZnO nanostructures for high performance supercapacitors: enhanced electrochemistry of ZnO nanocones compared to ZnO nanowires

    Science.gov (United States)

    He, Xiaoli; Yoo, Joung Eun; Lee, Min Ho; Bae, Joonho

    2017-06-01

    In this work, the morphology of ZnO nanostructures is engineered to demonstrate enhanced supercapacitor characteristics of ZnO nanocones (NCs) compared to ZnO nanowires (NWs). ZnO NCs are obtained by chemically etching ZnO NWs. Electrochemical characteristics of ZnO NCs and NWs are extensively investigated to demonstrate morphology dependent capacitive performance of one dimensional ZnO nanostructures. Cyclic voltammetry measurements on these two kinds of electrodes in a three-electrode cell confirms that ZnO NCs exhibit a high specific capacitance of 378.5 F g-1 at a scan rate of 20 mV s-1, which is almost twice that of ZnO NWs (191.5 F g-1). The charge-discharge and electrochemical impedance spectroscopy measurements also clearly result in enhanced capacitive performance of NCs as evidenced by higher specific capacitances and lower internal resistance. Asymmetric supercapacitors are fabricated using activated carbon (AC) as the negative electrode and ZnO NWs and NCs as positive electrodes. The ZnO NC⫽AC can deliver a maximum specific capacitance of 126 F g-1 at a current density of 1.33 A g-1 with an energy density of 25.2 W h kg-1 at the power density of 896.44 W kg-1. In contrast, ZnO NW⫽AC displays 63% of the capacitance obtained from the ZnO NC⫽AC supercapacitor. The enhanced performance of NCs is attributed to the higher surface area of ZnO nanostructures after the morphology is altered from NWs to NCs.

  2. Adsorption property of volatile molecules on ZnO nanowires ...

    Indian Academy of Sciences (India)

    7

    Keywords: ZnO; interaction; ammonia; band structure; density of states. 1. 2. 3 .... Virtual NanoLab [18] software was utilized to construct the ZnO nanowires with 24 Zn ..... But in reality, the ZnO NWs shows a better response (80.2) towards NH3.

  3. Quo vadis NW Black Sea benthic ecosystems?

    Science.gov (United States)

    Traian Gomoiu, Marian

    2016-04-01

    / thalasoterapy. Black Sea ecosystem restoration - Certainties and Uncertainties: Pressure on the Danube and other rivers has decreased, chemical discharges have decreased obviously, and yet there appear phenomena of water flowering - "red waters", hypoxia is still present at times and there is mass mortality of fish and other benthic organisms. Why? Signs of recovery should be considered cautiously and uncertainties may be resolved only in a longer time by increasing our scientific efforts. The results of the EU FP7 Project PERSEUS led to the identification of three important issues that should be resolved in order to achieve good environmental status: • Applying an adaptive management to increase the resilience of the ecosystems and to diminish the vulnerability of biodiversity; • Necessity of participative approach by stakeholders; • Identifying and obtaining adequate financial support for new R-D-I projects. Who are the actors in addressing and implementing the actions? • Academic educational and research institutions for adequate working condition; • More specialists trained for taxonomic groups; • Reasonable diversity of coordinating specialists, capable team leaders / satisfactory work packages; • Attracting NGO members towards nature conservation issues; • Resonable stakeholders committed to environmental issues. Studying the results of researches carried out by GeoEcoMar on the Romanian Black Sea coast in recent years, the author concluded that the major problems hampering progress towards a good ecosystem in NW Bent Black Sea are: • lack of diversity in the fields of research, both in theoretical and applied realms; • structural and functional consequences of ecological pressures and the disordered state of the ecosystems in the periods of paroxysmal eutrophication / pollution at the end of the 20th Century; • scarcity of data and knowledge on the Social-Economic System; • high costs of the new marine technology used directly in the sea and

  4. Cytotoxic effects of ZnO nanoparticles on mouse testicular cells

    Directory of Open Access Journals (Sweden)

    Han Z

    2016-10-01

    Full Text Available Zhe Han,1,* Qi Yan,1,* Wei Ge,2 Zhi-Guo Liu,1 Sangiliyandi Gurunathan,3 Massimo De Felici,4 Wei Shen,2 Xi-Feng Zhang1 1College of Biological and Pharmaceutical Engineering, Wuhan Polytechnic University, Wuhan, People’s Republic of China; 2Key Laboratory of Animal Reproduction and Germplasm Enhancement in Universities of Shandong, College of Animal Science and Technology, Qingdao Agricultural University, Qingdao, People’s Republic of China; 3Department of Stem Cell and Regenerative Biology, Konkuk University, Seoul, Republic of Korea; 4Department of Biomedicine and Prevention, University of Rome “Tor Vergata”, Rome, Italy *These authors contributed equally to this work Background: Nanoscience and nanotechnology are developing rapidly, and the applications of nanoparticles (NPs have been found in several fields. At present, NPs are widely used in traditional consumer and industrial products, however, the properties and safety of NPs are still unclear and there are concerns about their potential environmental and health effects. The aim of the present study was to investigate the potential toxicity of ZnO NPs on testicular cells using both in vitro and in vivo systems in a mouse experimental model. Methods: ZnO NPs with a crystalline size of 70 nm were characterized with various analytical techniques, including ultraviolet-visible spectroscopy, Fourier transform infrared spectroscopy, X-ray diffraction, transmission electron microscopy, and atomic force microscopy. The cytotoxicity of the ZnO NPs was examined in vitro on Leydig cell and Sertoli cell lines, and in vivo on the testes of CD1 mice injected with single doses of ZnO NPs.Results: ZnO NPs were internalized by Leydig cells and Sertoli cells, and this resulted in cytotoxicity in a time- and dose-dependent manner through the induction of apoptosis. Apoptosis likely occurred as a consequence of DNA damage (detected as γ-H2AX and RAD51 foci caused by increase in reactive oxygen

  5. Effects of growth duration on the structural and optical properties of ZnO nanorods grown on seed-layer ZnO/polyethylene terephthalate substrates

    Energy Technology Data Exchange (ETDEWEB)

    Jeong, Y.I.; Shin, C.M.; Heo, J.H. [Department of Nano Systems Engineering, Center for Nano Manufacturing Inje University, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing Inje University, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Lee, W.J. [Department of Nano Engineering, Dong-Eui University, Busan 614-714 (Korea, Republic of); Chang, J.H. [Major of Nano Semiconductor, Korea Maritime University, Busan 606-791 (Korea, Republic of); Son, C.S. [Department of Electronic Materials Engineering, Silla University, Busan 617-736 (Korea, Republic of); Yun, J. [Department of Nano Science and Engineering, Institute of Advanced Materials Kyungnam University, Changwon, Gyeongnam 631-701 (Korea, Republic of)

    2011-10-01

    Well-aligned single crystalline zinc oxide (ZnO) nanorods were successfully grown, by hydrothermal synthesis at a low temperature, on flexible polyethylene terephthalate (PET) substrates with a seed layer. Photoluminescence (PL), field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) measurements were used to analyze the optical and structural properties of ZnO nanorods grown for various durations from 0.5 h to 10 h. Regular and well-aligned ZnO nanorods with diameters ranging from 62 nm to 127 nm and lengths from 0.3 {mu}m to 1.65 {mu}m were formed after almost 5 h of growth. The growth rate of ZnO grown on PET substrates is lower than that grown on Si (1 0 0) substrates. Enlarged TEM images show that the tips of the ZnO nanorods grown for 6 h have a round shape, whereas the tips grown for 10 h are sharpened. The crystal properties of ZnO nanorods can be tuned by using the growth duration as a growth condition. The XRD and PL results indicate that the structural and optical properties of the ZnO nanorods are most improved after 5 h and 6 h of growth, respectively.

  6. Single nanowire green InGaN/GaN light emitting diodes

    Science.gov (United States)

    Zhang, Guogang; Li, Ziyuan; Yuan, Xiaoming; Wang, Fan; Fu, Lan; Zhuang, Zhe; Ren, Fang-Fang; Liu, Bin; Zhang, Rong; Tan, Hark Hoe; Jagadish, Chennupati

    2016-10-01

    Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

  7. Montane pollen from the Tertiary of NW. Borneo

    NARCIS (Netherlands)

    Muller, J.

    1966-01-01

    In NW. Borneo thick series of Tertiary sediments occur which are rich in fossil pollen and spores. The majority of these plant microfossils were derived from the various types of tropical lowland vegetation such as mangrove (Muller, 1964), mixed peat swamp forest and mixed Dipterocarp forest. Some

  8. Hydrogeology of the basalts in the Uruguayan NW

    International Nuclear Information System (INIS)

    Hausman, A.; Fernandez, A.

    1967-01-01

    This work is about the hydrogeological aspects in the NW Uruguayan basaltic area. The results of this research are the main geological, morphological and hydrogeological aspects of the area as well as the characteristics and the color of the basalt and sandstones

  9. Palaeofloods and ancient fishing weirs in NW Iberian rivers

    NARCIS (Netherlands)

    Viveen, W.; Sanjurjo-Sanchez, J.; Goy-Dizc, A.; Veldkamp, A.; Schoorl, J.M.

    2014-01-01

    A 15-m-thick, fluvial sedimentary record of the NW Iberian lower Miño River was studied. Grain-size analyses were performed and twelve samples were dated using optically stimulated luminescence dating techniques, documenting a 1300-yr-old reconstructed fluvial record that does not match with known

  10. Electrical characterization of ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Schlenker, E.; Bakin, A.; Postels, B.; Mofor, A.C.; Wehmann, H.H.; Waag, A. [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, 38106 Braunschweig (Germany); Weimann, T.; Hinze, P. [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, 38116 Braunschweig (Germany)

    2007-05-15

    Zinc oxide (ZnO) nanorods were grown by a wet chemical approach and by vapor phase transport. To explore the electrical properties of individual nanostructures current-voltage (I-V) characteristics were obtained by using an atomic force microscope (AFM) with a conductive tip or by detaching the nanorods from the growth substrate, transferring them to an isolating substrate and contacting them with evaporated Ti/Au electrodes patterned by electron-beam lithography. The AFM-approach only yields a Schottky diode behavior, while the Ti/Au forms ohmic contacts to the ZnO. For the latter method the obtained I-V curves reveal a resistivity of the nanorods in the order of 10{sup -5} {omega} cm which is unusually low for undoped ZnO. We therefore assume the existence of a highly conductive surface channel. (copyright 2007 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  11. Photoluminescence properties of Co-doped ZnO nanocrystals

    DEFF Research Database (Denmark)

    Lommens, P.; Smet, P.F.; De Mello Donega, C.

    2006-01-01

    We performed photoluminescence experiments on colloidal, Co -doped ZnO nanocrystals in order to study the electronic properties of Co in a ZnO host. Room temperature measurements showed, next to the ZnO exciton and trap emission, an additional emission related to the Co dopant. The spectral...... position and width of this emission does not depend on particle size or Co concentration. At 8 K, a series of ZnO bulk phonon replicas appear on the Co-emission band. We conclude that Co ions are strongly localized in the ZnO host, making the formation of a Co d-band unlikely. Magnetic measurements...

  12. Effect of precursor solutions on ZnO film via solution precursor plasma spray and corresponding gas sensing performances

    International Nuclear Information System (INIS)

    Yu, Z.X.; Ma, Y.Z.; Zhao, Y.L.; Huang, J.B.; Wang, W.Z.; Moliere, M.; Liao, H.L.

    2017-01-01

    Highlights: • C-axis preferential oriented grown ZnO films were firstly deposited via SPPS with different solutions. • ZnO films were hydrophobic due to cauliflower and honeycomb-like surface morphologies with high surface specific area. • Gas detecting performance of (002) plane oriented ZnO was predicted and compared by “first principle calculation method”. - Abstract: Solution precursor plasma spraying (SPPS) as a novel thermal spray method was employed to deposit nano-structured ZnO thin film using different formulations of the precursor solution. This article focuses on the influence of the solution composition on the preferential orientation of crystal growth, on crystal size and surface morphology of the resulting ZnO films. The trend of preferential growth along (002) lattice plane of ZnO film was studied by slow scanning X-ray diffraction using a specific coefficient P_(_0_0_2_)_. It appears that the thermal spray process promotes the buildup of ZnO films preferentially oriented along the c-axis. The shape of single particle tends to change from round shaped beads to hexagonal plates by increasing the volume ratio of ethanol in the solvent. Both cauliflower and honeycomb-like surface morphologies featuring high specific surface area and roughness were obtained through the SPPS process by varying solution composition. These ZnO films are hydrophobic with contact angle as high as 136°, which is seemingly associated with micro reliefs developing high surface specific area. Then the gas sensing performances of ZnO films preferentially oriented along (002) face were tentatively predicted using the “first principle calculation method” and were compared with those of conventional films that are mainly oriented along the (101) face. The (002) face displays better hydrogen adsorption capability than the (101) face with much larger resulting changes in electrical resistance. In conclusion, the c-axis oriented ZnO films obtained through SSPS have

  13. Effect of precursor solutions on ZnO film via solution precursor plasma spray and corresponding gas sensing performances

    Energy Technology Data Exchange (ETDEWEB)

    Yu, Z.X., E-mail: zexin.yu@utbm.fr [Univ Bourgogne Franche Comte, CNRS, Lab ICB, UMR 6303, Site UTBM, F-90010 Belfort (France); Ma, Y.Z., E-mail: yangzhou.ma@outlook.com [School of Materials Science and Engineering, Anhui University of Technology, Ma’anshan 243002 (China); Zhao, Y.L. [Univ Bourgogne Franche Comte, CNRS, Lab ICB, UMR 6303, Site UTBM, F-90010 Belfort (France); Huang, J.B.; Wang, W.Z. [Key Lab of Safety Science of Pressurized System, Ministry of Education, School of Mechanical and Power Engineering, East China University of Science and Technology, Shanghai 200237 (China); Moliere, M.; Liao, H.L. [Univ Bourgogne Franche Comte, CNRS, Lab ICB, UMR 6303, Site UTBM, F-90010 Belfort (France)

    2017-08-01

    Highlights: • C-axis preferential oriented grown ZnO films were firstly deposited via SPPS with different solutions. • ZnO films were hydrophobic due to cauliflower and honeycomb-like surface morphologies with high surface specific area. • Gas detecting performance of (002) plane oriented ZnO was predicted and compared by “first principle calculation method”. - Abstract: Solution precursor plasma spraying (SPPS) as a novel thermal spray method was employed to deposit nano-structured ZnO thin film using different formulations of the precursor solution. This article focuses on the influence of the solution composition on the preferential orientation of crystal growth, on crystal size and surface morphology of the resulting ZnO films. The trend of preferential growth along (002) lattice plane of ZnO film was studied by slow scanning X-ray diffraction using a specific coefficient P{sub (002).} It appears that the thermal spray process promotes the buildup of ZnO films preferentially oriented along the c-axis. The shape of single particle tends to change from round shaped beads to hexagonal plates by increasing the volume ratio of ethanol in the solvent. Both cauliflower and honeycomb-like surface morphologies featuring high specific surface area and roughness were obtained through the SPPS process by varying solution composition. These ZnO films are hydrophobic with contact angle as high as 136°, which is seemingly associated with micro reliefs developing high surface specific area. Then the gas sensing performances of ZnO films preferentially oriented along (002) face were tentatively predicted using the “first principle calculation method” and were compared with those of conventional films that are mainly oriented along the (101) face. The (002) face displays better hydrogen adsorption capability than the (101) face with much larger resulting changes in electrical resistance. In conclusion, the c-axis oriented ZnO films obtained through SSPS have

  14. Nanostructured ZnO films: A study of molecular influence on transport properties by impedance spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Sappia, Luciano D.; Trujillo, Matias R. [Instituto Superior de Investigaciones Biológicas (INSIBIO), CONICET, Chacabuco 461, T4000ILI San Miguel de Tucumán (Argentina); Laboratorio de Medios e Interfases (LAMEIN), Departamento de Bioingeniería, Fac. de Cs. Exactas y Tecnología, Universidad Nacional de Tucumán, Av. Independencia 1800, 4000 San Miguel de Tucumán (Argentina); Lorite, Israel [Division of Superconductivity and Magnetism, Institute for Experimental Physics II, University of Leipzig, Linnéstrasse 5, 04103 Leipzig (Germany); Madrid, Rossana E., E-mail: rmadrid@herrera.unt.edu.ar [Instituto Superior de Investigaciones Biológicas (INSIBIO), CONICET, Chacabuco 461, T4000ILI San Miguel de Tucumán (Argentina); Laboratorio de Medios e Interfases (LAMEIN), Departamento de Bioingeniería, Fac. de Cs. Exactas y Tecnología, Universidad Nacional de Tucumán, Av. Independencia 1800, 4000 San Miguel de Tucumán (Argentina); Tirado, Monica [NanoProject and Laboratorio de Nanomateriales y Propiedades Dieléctricas, Departamento de Física, Universidad Nacional de Tucumán, Avenida Independencia 1800, Tucumán (Argentina); Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); and others

    2015-10-15

    Graphical abstract: - Highlights: • We study electrical transport in nanostructured ZnO films by impedance spectroscopy. • Bioaggregates on the surface produce strong changes in film transport properties. • This behavior is explained by modeling data with RC parallel circuits. • Electrical responses of ZnO films to aggregates are promising for biosensing. - Abstract: Nanomaterials based on ZnO have been used to build glucose sensors due to its high isoelectric point, which is important when a protein like Glucose Oxidase (GOx) is attached to a surface. It also creates a biologically friendly environment to preserve the activity of the enzyme. In this work we study the electrical transport properties of ZnO thin films (TFs) and single crystals (SC) in contact with different solutions by using impedance spectroscopy. We have found that the composition of the liquid, by means of the charge of the ions, produces strong changes in the transport properties of the TF. The enzyme GOx and phosphate buffer solutions have the major effect in the conduction through the films, which can be explained by the entrapment of carriers at the grain boundaries of the TFs. These results can help to design a new concept in glucose biosensing.

  15. Field electron emission improvement of ZnO nanorod arrays after Ar plasma treatment

    International Nuclear Information System (INIS)

    Li Chun; Fang Guojia; Yuan Longyan; Liu Nishuang; Li Jun; Li Dejie; Zhao Xingzhong

    2007-01-01

    Vertically well-aligned single crystal ZnO nanorod arrays were synthesized and enhanced field electron emission was achieved after radio-frequency (rf) Ar plasma treatment. With Ar plasma treatment for 30 min, flat tops of the as-grown ZnO nanorods have been etched into sharp tips without damaging ZnO nanorod geometrical morphologies and crystallinity. After the Ar ion bombardment, the emission current density increases from 2 to 20 μA cm -2 at 9.0 V μm -1 with a decrease in turn-on voltage from 7.1 to 4.8 V μm -1 at a current density of 1 μA cm -2 , which demonstrates that the field emission of the as-grown ZnO nanorods has been efficiently enhanced. The scanning electron microscopy (SEM) results, in conjunction with the results of transmission electron microscopy (TEM), Raman spectroscopy and photoluminescence observation, are used to investigate the mechanisms of the field emission enhancement. It is believed that the enhancements can be mainly attributed to the sharpening of rod tops, and the decrease of electrostatic screening effect

  16. Characteristics of hydrogen co-doped ZnO : Al thin films

    International Nuclear Information System (INIS)

    Lee, S H; Lee, T S; Lee, K S; Cheong, B; Kim, W M; Kim, Y D

    2008-01-01

    ZnO films co-doped with H and Al (HAZO) were prepared by sputtering ZnO targets containing 1 wt% Al 2 O 3 on Corning glass at a substrate temperature of 150 deg. C with Ar and H 2 /Ar gas mixtures. The effects of hydrogen addition to Al-doped ZnO (AZO) films with low Al content on the electrical, the optical and the structural properties of the as-grown films as well as the vacuum- and air-annealed films were examined. Secondary ion mass spectroscopy analysis showed that the hydrogen concentration increased with increasing H 2 in sputter gas. For the as-deposited films, the free carrier number increased with increasing H 2 . The Hall mobility increased at low hydrogen content, reaching a maximum before decreasing with a further increase of H 2 content in sputter gas. Annealing at 300 deg. C resulted in the removal of hydrogen, causing a decrease in the carrier concentration. It was shown that hydrogen might exist as single isolated interstitial hydrogen bound with oxygen, thereby acting like an anionic dopant. Also, it was shown that the addition of hydrogen to ZnO films doped with low metallic dopant concentration could yield transparent conducting films with very low absorption loss as well as with proper electrical properties, which is suitable for thin film solar cell applications

  17. Nanoparticles of ZnO doped with Mn: structural and morphological characteristics

    Energy Technology Data Exchange (ETDEWEB)

    Bonifacio, Maria Aparecida Ribeiro; Lira, Helio de Lucena; Gama, Lucianna, E-mail: m_aparecidaribeiro@yahoo.com.br [Universidade Federal de Campina Grande (UFCG), PB (Brazil). Departamento de Engenharia de Materiais; Neiva, Laedna Souto [Universidade Federal do Cariri (UFCA), Juazeiro do Norte, CE (Brazil). Unidade Academica de Materiais; Kiminami, Ruth H. G. A. [Universidade Federal de Sao Carlos (USCar), SP (Brazil). Departamento de Engenharia de Materiais

    2017-07-15

    In this study, the effects of dopant concentrations on the structural and morphological characteristics of Zn{sub 1-x}Mn{sub x} O powders (x= 0.025, 0.05, 0.075, and 0.1 mole) synthesized by the Pechini method has been investigated. The powder was characterized by X-ray diffraction (XRD), Brunauer-Emmet-Teller (BET) specific surface, energy dispersive X-ray (EDX), scanning electron microscopy (SEM) and Spectroscopy with Fourier transform (FTIR). An XRD analysis of the powder showed the formation of ZnO phase with a typical single phase wurtzite structure. The EDX analysis revealed Mn incorporated in the ZnO structure. The particle size calculated by BET ranged from 24 to 63 nm, confirming the nanometric size of the powder particles. The SEM analysis revealed irregular shaped particle agglomerates and the presence of nanosheets. From FTIR it was confirmed the wurtzite structure in ZnO and ZnO nanoparticles doped with Mn. (author)

  18. Excimer laser processing of ZnO thin films prepared by the sol-gel process

    International Nuclear Information System (INIS)

    Winfield, R.J.; Koh, L.H.K.; O'Brien, Shane; Crean, Gabriel M.

    2007-01-01

    ZnO thin films were prepared on soda-lime glass from a single spin-coating deposition of a sol-gel prepared with anhydrous zinc acetate [Zn(C 2 H 3 O 2 ) 2 ], monoethanolamine [H 2 NC 2 H 4 OH] and isopropanol. The deposited films were dried at 50 and 300 deg. C. X-ray analysis showed that the films were amorphous. Laser annealing was performed using an excimer laser. The laser pulse repetition rate was 25 Hz with a pulse energy of 5.9 mJ, giving a fluence of 225 mJ cm -2 on the ZnO film. Typically, five laser pulses per unit area of the film were used. After laser processing, the hexagonal wurtzite phase of zinc oxide was observed from X-ray diffraction pattern analysis. The thin films had a transparency of greater than 70% in the visible region. The optical band-gap energy was 3.454 eV. Scanning electron microscopy and profilometry analysis highlighted the change in morphology that occurred as a result of laser processing. This comparative study shows that our sol-gel processing route differs significantly from ZnO sol-gel films prepared by conventional furnace annealing which requires temperatures above 450 deg. C for the formation of crystalline ZnO

  19. ZnO: Hydroquinone superlattice structures fabricated by atomic/molecular layer deposition

    International Nuclear Information System (INIS)

    Tynell, Tommi; Karppinen, Maarit

    2014-01-01

    Here we employ atomic layer deposition in combination with molecular layer deposition to deposit crystalline thin films of ZnO interspersed with single layers of hydroquinone in an effort to create hybrid inorganic–organic superlattice structures. The ratio of the ZnO and hydroquinone deposition cycles is varied between 199:1 and 1:1, and the structure of the resultant thin films is verified with X-ray diffraction and reflectivity techniques. Clear evidence of the formation of a superlattice-type structure is observed in the X-ray reflectivity patterns and the presence of organic bonds in the films corresponding to the structure of hydroquinone is confirmed with Fourier transform infrared spectroscopy measurements. We anticipate that hybrid superlattice structures such as the ones described in this work have the potential to be of great importance for future applications where the precise control of different inorganic and organic layers in hybrid superlattice materials is required. - Highlights: • Inorganic–organic superlattices can be made by atomic/molecular layer deposition. • This is demonstrated here for ZnO and hydroquinone (HQ). • The ratio of the ZnO and HQ layers is varied between 199:1 and 14:1. • The resultant thin films are crystalline

  20. ZnO: Hydroquinone superlattice structures fabricated by atomic/molecular layer deposition

    Energy Technology Data Exchange (ETDEWEB)

    Tynell, Tommi; Karppinen, Maarit, E-mail: maarit.karppinen@aalto.fi

    2014-01-31

    Here we employ atomic layer deposition in combination with molecular layer deposition to deposit crystalline thin films of ZnO interspersed with single layers of hydroquinone in an effort to create hybrid inorganic–organic superlattice structures. The ratio of the ZnO and hydroquinone deposition cycles is varied between 199:1 and 1:1, and the structure of the resultant thin films is verified with X-ray diffraction and reflectivity techniques. Clear evidence of the formation of a superlattice-type structure is observed in the X-ray reflectivity patterns and the presence of organic bonds in the films corresponding to the structure of hydroquinone is confirmed with Fourier transform infrared spectroscopy measurements. We anticipate that hybrid superlattice structures such as the ones described in this work have the potential to be of great importance for future applications where the precise control of different inorganic and organic layers in hybrid superlattice materials is required. - Highlights: • Inorganic–organic superlattices can be made by atomic/molecular layer deposition. • This is demonstrated here for ZnO and hydroquinone (HQ). • The ratio of the ZnO and HQ layers is varied between 199:1 and 14:1. • The resultant thin films are crystalline.

  1. Effect of Zn(NO{sub 3}){sub 2} concentration in hydrothermal–electrochemical deposition on morphology and photoelectrochemical properties of ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Yilmaz, Ceren, E-mail: ceryilmaz@ku.edu.tr [Koc University, Department of Chemistry, Rumelifeneri yolu, Sariyer 34450, Istanbul (Turkey); Unal, Ugur [Koc University, Department of Chemistry, Rumelifeneri yolu, Sariyer 34450, Istanbul (Turkey); Graduate School of Science and Engineering, Koc University, Rumelifeneri yolu, Sariyer 34450, Istanbul (Turkey); Koc University Surface Science and Technology Center (KUYTAM), Rumelifeneri yolu, Sariyer 34450, Istanbul (Turkey)

    2016-04-15

    Graphical abstract: - Highlights: • Combined hydrothermal–electrochemical deposition was used to grow ZnO films. • 1-D ZnO NRs are obtained even at high Zn(NO{sub 3}){sub 2} concentrations (1 mM < [Zn{sup 2+}] < 0.1 M). • Aspect ratio and alignment of ZnO NRs can be controlled by initial [Zn(NO{sub 3}){sub 2}]. • [Zn{sup 2+}] dependent structural and photoelectrochemical properties have been studied. • Photocurrent density exhibited by ZnO NRs increases with increasing aspect ratio. - Abstract: Zn(NO{sub 3}){sub 2} concentration had been reported to be significantly influential on electrodeposition of ZnO structures. In this work, this issue is revisited using hydrothermal–electrochemical deposition (HED). Seedless, cathodic electrochemical deposition of ZnO films is carried out on ITO electrode at 130 °C in a closed glass reactor with varying Zn(NO{sub 3}){sub 2} concentration. Regardless of the concentration of Zn{sup 2+} precursor (0.001–0.1 M) in the deposition solution, vertically aligned 1-D ZnO nanorods are obtained as opposed to electrodepositions at lower temperatures (70–80 °C). We also report the effects of high bath temperature and pressure on the photoelectrochemical properties of the ZnO films. Manipulation of precursor concentration in the deposition solution allows adjustment of the aspect ratio of the nanorods and the degree of texturation along the c-axis; hence photoinduced current density. HED is shown to provide a single step synthesis route to prepare ZnO rods with desired aspect ratio specific for the desired application just by controlling the precursor concentration.

  2. Evidence for volcanism in NW Ishtar Terra, Venus

    International Nuclear Information System (INIS)

    Gaddis, L.; Greeley, R.

    1989-01-01

    Venera 15/16 radar data for an area in NW Ishtar Terra, Venus, show an area with moderate radar return and a smooth textured surface which embays low lying areas of the surrounding mountainous terrain. Although this unit may be an extension of the lava plains of Lakshmi Planum to the southeast, detailed study suggests a separate volcanic center in NW Ishtar Terra. Lakshmi Planum, on the Ishtar Terra highland, exhibits major volcanic and tectonic features. On the Venera radar image radar brightness is influenced by slope and roughness; radar-facing slopes (east-facing) and rough surfaces (approx. 8 cm average relief) are bright, while west-facing slopes and smooth surfaces are dark. A series of semi-circular features, apparently topographic depressions, do not conform in orientation to major structural trends in this region of NW Ishtar Terra. The large depression in NW Ishtar Terra is similar to the calderas of Colette and Sacajawea Paterae, as all three structures are large irregular depressions. NW Ishtar Terra appears to be the site of a volcanic center with a complex caldera structure, possibly more than one eruptive vent, and associated lobed flows at lower elevations. The morphologic similarity between this volcanic center and those of Colette and Sacajawea suggests that centralized eruptions have been the dominant form of volcanism in Ishtar. The location of this volcanic center at the intersection of two major compressional mountain belts and the large size of the calders (with an inferred larg/deep magma source) support a crustal thickening/melting rather than a hot-spot origin for these magmas

  3. Effect of precursor solutions on ZnO film via solution precursor plasma spray and corresponding gas sensing performances

    Science.gov (United States)

    Yu, Z. X.; Ma, Y. Z.; Zhao, Y. L.; Huang, J. B.; Wang, W. Z.; Moliere, M.; Liao, H. L.

    2017-08-01

    Solution precursor plasma spraying (SPPS) as a novel thermal spray method was employed to deposit nano-structured ZnO thin film using different formulations of the precursor solution. This article focuses on the influence of the solution composition on the preferential orientation of crystal growth, on crystal size and surface morphology of the resulting ZnO films. The trend of preferential growth along (002) lattice plane of ZnO film was studied by slow scanning X-ray diffraction using a specific coefficient P(002). It appears that the thermal spray process promotes the buildup of ZnO films preferentially oriented along the c-axis. The shape of single particle tends to change from round shaped beads to hexagonal plates by increasing the volume ratio of ethanol in the solvent. Both cauliflower and honeycomb-like surface morphologies featuring high specific surface area and roughness were obtained through the SPPS process by varying solution composition. These ZnO films are hydrophobic with contact angle as high as 136°, which is seemingly associated with micro reliefs developing high surface specific area. Then the gas sensing performances of ZnO films preferentially oriented along (002) face were tentatively predicted using the "first principle calculation method" and were compared with those of conventional films that are mainly oriented along the (101) face. The (002) face displays better hydrogen adsorption capability than the (101) face with much larger resulting changes in electrical resistance. In conclusion, the c-axis oriented ZnO films obtained through SSPS have favorable performances to be used as sensitive layer in gas sensing applications.

  4. Defect studies of ZnO films prepared by pulsed laser deposition on various substrates

    International Nuclear Information System (INIS)

    Melikhova, O; Čížek, J; Procházka, I; Kužel, R; Novotný, M; Bulír, J; Lancok, J; Anwand, W; Brauer, G; Connolly, J; McCarthy, E; Krishnamurthy, S; Mosnier, J-P

    2013-01-01

    ZnO thin films deposited on various substrates were characterized by slow positron implantation spectroscopy (SPIS) combined with X-ray diffraction (XRD). All films studied exhibit wurtzite structure and crystallite size 20–100 nm. The mosaic spread of crystallites is relatively small for the films grown on single crystalline substrates while it is substantial for the film grown on amorphous substrate. SPIS investigations revealed that ZnO films deposited on single crystalline substrates exhibit significantly higher density of defects than the film deposited on amorphous substrate. This is most probably due to a higher density of misfit dislocations, which compensate for the lattice mismatch between the film and the substrate.

  5. Enhanced field emission of ZnO nanoneedle arrays via solution etching at room temperature

    DEFF Research Database (Denmark)

    Ma, Huanming; Qin, Zhiwei; Wang, Zaide

    2017-01-01

    ZnO nanoneedle arrays (ZnO nns) were synthesized by a facile two-step solution-phase method based on the etching of pre-synthesized ZnO nanowire arrays (ZnO nws) with flat ends at room temperature. Field emission measurement results showed that the turn-on electronic fields of ZnO nns and nws wer...

  6. Carrier transport in flexible organic bistable devices of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) polymer layer

    International Nuclear Information System (INIS)

    Son, Dong-Ick; Park, Dong-Hee; Choi, Won Kook; Cho, Sung-Hwan; Kim, Won-Tae; Kim, Tae Whan

    2009-01-01

    The bistable effects of ZnO nanoparticles embedded in an insulating poly(methyl methacrylate) (PMMA) polymer single layer by using flexible polyethylene terephthalate (PET) substrates were investigated. Transmission electron microscopy (TEM) images revealed that ZnO nanoparticles were formed inside the PMMA polymer layer. Current-voltage (I-V) measurement on the Al/ZnO nanoparticles embedded in an insulating PMMA polymer layer/ITO/PET structures at 300 K showed a nonvolatile electrical bistability behavior with a flat-band voltage shift due to the existence of the ZnO nanoparticles, indicative of trapping, storing, and emission of charges in the electronic states of the ZnO nanoparticles. The carrier transport mechanism of the bistable behavior for the fabricated organic bistable device (OBD) structures is described on the basis of the I-V results by analyzing the effect of space charge.

  7. Ferromagnetism and suppression of metallic clusters in Fe implanted ZnO -- a phenomenon related to defects?

    International Nuclear Information System (INIS)

    Arenholz, Elke; Zhou, S.; Potzger, K.; Talut, G.; Reuther, H.; Kuepper, K.; Grenzer, J.; Xu, Q.; Mucklich, A.; Helm, M.; Fassbender, J.; Arenholz, E.

    2008-01-01

    We investigated ZnO(0001) single crystals annealed in high vacuum with respect to their magnetic properties and cluster formation tendency after implant-doping with Fe. While metallic Fe cluster formation is suppressed, no evidence for the relevance of the Fe magnetic moment to the observed ferromagnetism was found. The latter along with the cluster suppression is discussed with respect to defects in the ZnO host matrix, since the crystalline quality of the substrates was lowered due to the preparation as observed by x-ray diffraction

  8. Ferromagnetism and suppression of metallic clusters in Fe implanted ZnO: a phenomenon related to defects?

    International Nuclear Information System (INIS)

    Zhou Shengqiang; Potzger, K; Talut, G; Reuther, H; Kuepper, K; Grenzer, J; Xu Qingyu; Muecklich, A; Helm, M; Fassbender, J; Arenholz, E

    2008-01-01

    We investigated ZnO(0 0 0 1) single crystals annealed in high vacuum with respect to their magnetic properties and cluster formation tendency after implant-doping with Fe. While metallic Fe cluster formation is suppressed, no evidence for the relevance of the Fe magnetic moment to the observed ferromagnetism was found. The latter along with the cluster suppression is discussed with respect to defects in the ZnO host matrix, since the crystalline quality of the substrates was lowered due to the preparation as observed by x-ray diffraction

  9. Photoluminescence of Hexagonal ZnO Nanorods Hydrothermally Grown on Zn Foils in KOH Solutions with Different Values of Basicity

    Directory of Open Access Journals (Sweden)

    Nuengruethai Ekthammathat

    2013-01-01

    Full Text Available Aligned hexagonal ZnO nanorods on pure Zn foils were hydrothermally synthesized in 30 mL solutions containing 0.05–0.50 g KOH. The products were characterized by X-ray diffraction (XRD, scanning electron microscopy (SEM, transmission electron microscopy (TEM, and photoluminescence (PL spectroscopy. In this research, wurtzite hexagonal ZnO nanorods grown along the [002] direction with green light emission at 541 nm caused by singly ionized oxygen vacancies inside were detected.

  10. The geostatistical approach for structural and stratigraphic framework analysis of offshore NW Bonaparte Basin, Australia

    International Nuclear Information System (INIS)

    Wahid, Ali; Salim, Ahmed Mohamed Ahmed; Yusoff, Wan Ismail Wan; Gaafar, Gamal Ragab

    2016-01-01

    Geostatistics or statistical approach is based on the studies of temporal and spatial trend, which depend upon spatial relationships to model known information of variable(s) at unsampled locations. The statistical technique known as kriging was used for petrophycial and facies analysis, which help to assume spatial relationship to model the geological continuity between the known data and the unknown to produce a single best guess of the unknown. Kriging is also known as optimal interpolation technique, which facilitate to generate best linear unbiased estimation of each horizon. The idea is to construct a numerical model of the lithofacies and rock properties that honor available data and further integrate with interpreting seismic sections, techtonostratigraphy chart with sea level curve (short term) and regional tectonics of the study area to find the structural and stratigraphic growth history of the NW Bonaparte Basin. By using kriging technique the models were built which help to estimate different parameters like horizons, facies, and porosities in the study area. The variograms were used to determine for identification of spatial relationship between data which help to find the depositional history of the North West (NW) Bonaparte Basin

  11. The geostatistical approach for structural and stratigraphic framework analysis of offshore NW Bonaparte Basin, Australia

    Energy Technology Data Exchange (ETDEWEB)

    Wahid, Ali, E-mail: ali.wahid@live.com; Salim, Ahmed Mohamed Ahmed, E-mail: mohamed.salim@petronas.com.my; Yusoff, Wan Ismail Wan, E-mail: wanismail-wanyusoff@petronas.com.my [Universiti Teknologi PETRONAS, Bandar Seri Iskandar, 32610 Tronoh, Perak (Malaysia); Gaafar, Gamal Ragab, E-mail: gaafargr@gmail.com [Petroleum Engineering Division, PETRONAS Carigali Sdn Bhd, Kuala Lumpur (Malaysia)

    2016-02-01

    Geostatistics or statistical approach is based on the studies of temporal and spatial trend, which depend upon spatial relationships to model known information of variable(s) at unsampled locations. The statistical technique known as kriging was used for petrophycial and facies analysis, which help to assume spatial relationship to model the geological continuity between the known data and the unknown to produce a single best guess of the unknown. Kriging is also known as optimal interpolation technique, which facilitate to generate best linear unbiased estimation of each horizon. The idea is to construct a numerical model of the lithofacies and rock properties that honor available data and further integrate with interpreting seismic sections, techtonostratigraphy chart with sea level curve (short term) and regional tectonics of the study area to find the structural and stratigraphic growth history of the NW Bonaparte Basin. By using kriging technique the models were built which help to estimate different parameters like horizons, facies, and porosities in the study area. The variograms were used to determine for identification of spatial relationship between data which help to find the depositional history of the North West (NW) Bonaparte Basin.

  12. Properties of ZnO whiskers under CO2-laser irradiation

    International Nuclear Information System (INIS)

    Shkumbatyuk, P. S.

    2010-01-01

    Needlelike ZnO single crystals (whiskers) 0.3-0.8 mm long and 1-10 μm in diameter with a resistivity from 3 x 10 2 to 1 Ω cm have been grown under cw CO 2 -laser irradiation. The whiskers exhibit weak electroluminescence caused by injection from contacts with participation of intrinsic defects, which affect the electric field distribution.

  13. Hydro- and solvothermally-prepared ZnO and its catalytic effect on photodegradation of reactive orange 16 dye

    Directory of Open Access Journals (Sweden)

    Simović Bojana

    2014-01-01

    Full Text Available In this work, zinc oxide powders were obtained by two different techniques: hydro- and solvothermal synthesis starting from Zn(NO32 and Zn(CH3COO2, respectively. The influence of synthetic procedure on the structural, microstructural, thermal and photocatalytic properties of the prepared ZnO powders was investigated. Both ZnO samples were further annealed at moderate conditions (300°C to avoid grain growth and to remove traces of impurities. In all four cases a single-phase hexagonal ZnO was confirmed by X-ray powder diffraction. The morphology of prepared ZnO powders was different and it varied from rounded nanograins to microrods. All prepared samples showed higher photocatalytic efficiency in degradation of textile azo-dye Reactive Orange 16(RO16 than the commercial ZnO. In addition, the non-annealed samples had better photocatalytic properties than the commercial Degussa P25 TiO2 powder. [Projekat Ministarstva nauke Republike Srbije, br. III45007, br. ON171032 i br. ON172013

  14. ZnO nanorods arrays with Ag nanoparticles on the (002) plane derived by liquid epitaxy growth and electrodeposition process

    International Nuclear Information System (INIS)

    Yin Xingtian; Que Wenxiu; Shen Fengyu

    2011-01-01

    Well-aligned ZnO nanorods (NRs) arrays with Ag nanoparticles (NPs) on the (002) plane are obtained by combining a liquid epitaxy technique with an electrodeposition process. Cyclic voltammetry study is employed to understand the electrochemical behaviors of the electrodeposition system, and potentiostatic method is employed to deposit silver NPs on the ZnO NRs in the electrolyte with an Ag + concentration of 1 mM. X-ray diffraction analysis is used to study the crystalline properties of the as-prepared samples, and energy dispersive X-ray is adopted to confirm the composition at the surface of the deposited samples. Results indicate only a small quantity of silver can be deposited on the surface of the samples. Effect of the deposition potential and time on the morphological properties of the resultant Ag NPs/ZnO NRs are investigated in detail. Scanning electron microscopy images and transmission electron microscopy images indicate that the Ag NPs deposited on the (002) plane of the ZnO NRs with a large dispersion in diameter can be obtained by a single potentiostatic deposition process, while dense Ag NPs with a much smaller diameter dispersion on the top of the ZnO NRs, most of which locate on the conical tip of the ZnO NRs, can be obtained by a two-potentiostatic deposition process, The mechanism of this deposition process is also suggested.

  15. Half-metallic ferromagnetism in Cu-doped zinc-blende ZnO from first principles study

    International Nuclear Information System (INIS)

    Li, X.F.; Zhang, J.; Xu, B.; Yao, K.L.

    2012-01-01

    Electronic structures and magnetism of Cu-doped zinc-blende ZnO have been investigated by the first-principle method based on density functional theory (DFT). The results show that Cu can induce stable ferromagnetic ground state. The magnetic moment of supercell including single Cu atom is 1.0 μ B . Electronic structure shows that Cu-doped zinc-blende ZnO is a p-type half-metallic ferromagnet. The half-metal property is mainly attribute to the crystal field splitting of Cu 3d orbital, and the ferromagnetism is dominated by the hole-mediated double exchange mechanism. Therefore, Cu-doped zinc-blende ZnO should be useful in semiconductor spintronics and other applications. - Highlights: → Magnetism of Cu-doped zinc-blende ZnO. → Cu-doped zinc-blende ZnO shows interesting half-metal character. → Total energies calculations reveal that Cu can induce ferromagnetic ground state. → Ferromagnetism dominated by the hole-mediated double exchange mechanism.

  16. Morphology-controllable of Sn doped ZnO nanorods prepared by spray pyrolysis for transparent electrode application

    Science.gov (United States)

    Hameed, M. Shahul; Princice, J. Joseph; Babu, N. Ramesh; Zahirullah, S. Syed; Deshmukh, Sampat G.; Arunachalam, A.

    2018-05-01

    Transparent conductive Sn doped ZnO nanorods have been deposited at various doping level by spray pyrolysis technique on glass substrate. The structural, surface morphological and optical properties of these films have been investigated with the help of X-ray diffraction (XRD), scanning electron microscope (SEM), atomic force microscope (AFM) and UV-Vis spectrophotometer respectively. XRD patterns revealed a successful high quality growth of single crystal ZnO nanorods with hexagonal wurtzite structure having (002) preferred orientation. The scanning electron microscope (SEM) image of the prepared films exposed the uniform distribution of Sn doped ZnO nanorod shaped grains. All these films were highly transparent in the visible region with average transmittance of 90%.

  17. p-type ZnO films with solid-source phosphorus doping by molecular-beam epitaxy

    International Nuclear Information System (INIS)

    Xiu, F.X.; Yang, Z.; Mandalapu, L.J.; Liu, J.L.; Beyermann, W. P.

    2006-01-01

    Phosphorus-doped p-type ZnO films were grown on r-plane sapphire substrates using molecular-beam epitaxy with a solid-source GaP effusion cell. X-ray diffraction spectra and reflection high-energy electron diffraction patterns indicate that high-quality single crystalline (1120) ZnO films were obtained. Hall and resistivity measurements show that the phosphorus-doped ZnO films have high hole concentrations and low resistivities at room temperature. Photoluminescence (PL) measurements at 8 K reveal a dominant acceptor-bound exciton emission with an energy of 3.317 eV. The acceptor energy level of the phosphorus dopant is estimated to be 0.18 eV above the valence band from PL spectra, which is also consistent with the temperature dependence of PL measurements

  18. Microstructure and optical properties of nanocrystalline ZnO and ZnO:(Li or Al) thin films

    Energy Technology Data Exchange (ETDEWEB)

    Oral, A. Yavuz [Department of Materials Science and Engineering, Gebze Institute of Technology, Gebze 41400 (Turkey)]. E-mail: aoral@gyte.edu.tr; Bahsi, Z. Banu [Department of Materials Science and Engineering, Gebze Institute of Technology, Gebze 41400 (Turkey); Aslan, M. Hasan [Department of Physics, Gebze Institute of Technology, Gebze 41400 (Turkey)

    2007-03-15

    Zinc oxide thin films (ZnO, ZnO:Li, ZnO:Al) were deposited on glass substrates by a sol-gel technique. Zinc acetate, lithium acetate, and aluminum chloride were used as metal ion sources in the precursor solutions. XRD analysis revealed that Li doped and undoped ZnO films formed single phase zincite structure in contrast to Al:ZnO films which did not fully crystallize at the annealing temperature of 550 deg. C. Crystallized films had a grain size under 50 nm and showed c-axis grain orientation. All films had a very smooth surface with RMS surface roughness values between 0.23 and 0.35 nm. Surface roughness and optical band tail values increased by Al doping. Compared to undoped ZnO films, Li doping slightly increased the optical band gap of the films.

  19. Determination of chemical state of Al doping element in ZnO layer

    International Nuclear Information System (INIS)

    Csik, A.; Toth, J.; Lovics, R.; Takats, V.; Hakl, J.; Vad, K.

    2011-01-01

    Complete text of publication follows. Transparent and conducting oxides (TCO) thin films are very important from the scientific and technological point of view. The coexistence of electrical conductivity and optical transparency in these materials makes it possible to use them in modern technologies: transparent electrodes for flat panel displays and photovoltaic cells, low emissivity windows, transparent thin films transistors, light emitting diodes. One of the important TCO semiconductors is the impurity-doped zinc-oxide (ZnO) layer, for example aluminium doped zinc-oxide layer (AZO), due to its unique physical and chemical properties. It has wide band gap (3.44 eV) and large exciton binding energy (60 meV). ZnO thin layers have a great interest for potential applications in optical and optoelectronic devices. Furthermore, high quality single crystal ZnO wafers has already been available as a result of new developments in ZnO growth technologies with the capability to scale up wafer size, which is an important factor for increasing efficiency of solar cells. Nonetheless, in order to enable the use of ZnO layers with enhanced electrical properties, higher conductivities can be obtained by doping with donor elements such as aluminium, gallium, indium, boron or fluorine. Investigation of p-type doping possibilities, diffusion processes and thermal stability of these layers are in the focus of interest in the interpretation of their optical and electrical properties, and the prediction of their lifetime. In our SNMS/SIMS-XPS laboratory, experiments on TCO layered structures were carried on. Depth profile and chemical state analyses of ZnO/AlO/ZnO layered structures were performed by Secondary Neutral Mass Spectrometry (SNMS) and X-ray photoelectron spectroscopy (XPS). The samples were produced by atomic layer deposition technique with the following layered structure: between a few hundred atomic layers of ZnO was an AlO atomic layer. The SNMS was used for depth

  20. On the difficulties in characterizing ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Schlenker, E; Bakin, A; Wehmann, H-H; Waag, A [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Strasse 66, D-38106 Braunschweig (Germany); Weimann, T; Hinze, P; Weber, D H [Physikalisch-Technische Bundesanstalt (PTB), Bundesallee 100, D-38116 Braunschweig (Germany); Goelzhaeuser, A [Physics of Supramolecular Systems, University of Bielefeld, Universitaetsstrasse 25, D-33615 Bielefeld (Germany)], E-mail: e.schlenker@tu-bs.de

    2008-09-10

    The electrical properties of single ZnO nanowires grown by vapor phase transport were investigated. While some samples were contacted by Ti/Au electrodes, another set of samples was investigated using a manipulator tip in a low energy electron point-source microscope. The deduced resistivities range from 1 to 10{sup 3} {omega}cm. Additionally, the resistivities of nanowires from multiple publications were brought together and compared to the values obtained from our measurements. The overview of all data shows enormous differences (10{sup -3}-10{sup 5} {omega}cm) in the measured resistivities. In order to reveal the origin of the discrepancies, the influence of growth parameters, measuring methods, contact resistances, crystal structures and ambient conditions are investigated and discussed in detail.

  1. Stimulated emission from ZnO nanorod arrays

    Energy Technology Data Exchange (ETDEWEB)

    Hauschild, R.; Lange, H.; Priller, H.; Klingshirn, C.; Kalt, H. [Institut fuer Angewandte Physik, Universitaet Karlsruhe (TH), 76128 Karlsruhe (Germany); Kling, R. [Abteilung Halbleiterphysik, Universitaet Ulm, Albert-Einstein Allee 45, 89081 Ulm (Germany); Waag, A. [Institut fuer Halbleitertechnik, TU-Braunschweig, H.-Sommer-Str. 66, 38106 Braunschweig (Germany); Fan, H.J.; Zacharias, M. [Max-Planck-Institut fuer Mikrostrukturphysik, Weinberg 2, 06120 Halle (Germany)

    2006-08-15

    We discuss the time-resolved photoluminescence (PL) spectra of single ZnO nanorods taken at excitation fluences above and below the laser threshold. In the latter case, P-band emission related to polariton-polariton scattering is observed for certain rod geometries while stimulated emission occurs within the electron-hole plasma band. We calculate the intensity distribution of low-order waveguide modes as well as their energy dependence for given nanorod geometries to discuss their relevance with respect to nanorod lasing and polariton propagation. Additional finite-element analysis confirms that a gold layer formed at the nanorod-substrate interface under certain growth conditions leads to an enhancement of confinement within the resonator. (2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (Abstract Copyright [2006], Wiley Periodicals, Inc.)

  2. On the difficulties in characterizing ZnO nanowires.

    Science.gov (United States)

    Schlenker, E; Bakin, A; Weimann, T; Hinze, P; Weber, D H; Gölzhäuser, A; Wehmann, H-H; Waag, A

    2008-09-10

    The electrical properties of single ZnO nanowires grown by vapor phase transport were investigated. While some samples were contacted by Ti/Au electrodes, another set of samples was investigated using a manipulator tip in a low energy electron point-source microscope. The deduced resistivities range from 1 to 10(3) Ωcm. Additionally, the resistivities of nanowires from multiple publications were brought together and compared to the values obtained from our measurements. The overview of all data shows enormous differences (10(-3)-10(5) Ωcm) in the measured resistivities. In order to reveal the origin of the discrepancies, the influence of growth parameters, measuring methods, contact resistances, crystal structures and ambient conditions are investigated and discussed in detail.

  3. Optical and scintillation properties of bulk ZnO crystal

    Energy Technology Data Exchange (ETDEWEB)

    Yanagida, Takayuki [Kyushu Institute of Technology, 2-4 Hibikino, Wakamatsu, Kitakyushu 808-0196 (Japan); Fujimoto, Yutaka; Kurosawa, Shunsuke [Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577 (Japan); Yamanoi, Kohei; Sarukura, Nobuhiko [Institute of Laser Engineering, Osaka University, Suita, Osaka 565-0871 (Japan); Kano, Masataka; Wakamiya, Akira [Daishinku Corporation, 1389 Shinzaike, Hiraoka-cho, Kakogawa, Hyogo 675-0194 (Japan)

    2012-12-15

    Single crystal bulk ZnO scintillator grown by the hydrothermal method was tested on its scintillation performances. In X-ray induced radio luminescence spectrum, it exhibited two intense emission peaks at 400 and 550 nm. The former was ascribed to the free and bound exciton related luminescence and the latter to oxygen vacancy related one, respectively. X-ray induced scintillation decay time of the exciton related emission measured by the pulse X-ray streak camera system resulted {proportional_to} 4 ns. Finally, the light yield under {sup 241}Am 5.5 MeV {alpha}-ray was examined and it resulted {proportional_to} 500 ph/5.5 MeV-{alpha}.(copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  4. Reducing ZnO nanoparticles toxicity through silica coating

    Directory of Open Access Journals (Sweden)

    Sing Ling Chia

    2016-10-01

    Full Text Available ZnO NPs have good antimicrobial activity that can be utilized as agents to prevent harmful microorganism growth in food. However, the use of ZnO NPs as food additive is limited by the perceived high toxicity of ZnO NPs in many earlier toxicity studies. In this study, surface modification by silica coating was used to reduce the toxicity of ZnO NPs by significantly reducing the dissolution of the core ZnO NPs. To more accurately recapitulate the scenario of ingested ZnO NPs, we tested our as synthesized ZnO NPs in ingestion fluids (synthetic saliva and synthetic gastric juice to determine the possible forms of ZnO NPs in digestive system before exposing the products to colorectal cell lines. The results showed that silica coating is highly effective in reducing toxicity of ZnO NPs through prevention of the dissociation of ZnO NPs to zinc ions in both neutral and acidic condition. The silica coating however did not alter the desired antimicrobial activity of ZnO NPs to E. coli and S. aureus. Thus, silica coating offered a potential solution to improve the biocompatibility of ZnO NPs for applications such as antimicrobial agent in foods or food related products like food packaging. Nevertheless, caution remains that high concentration of silica coated ZnO NPs can still induce undesirable cytotoxicity to mammalian gut cells. This study indicated that upstream safer-by-design philosophy in nanotechnology can be very helpful in a product development.

  5. Effect of Al and Fe doping in ZnO on magnetic and magneto-transport properties

    International Nuclear Information System (INIS)

    Kumar, Santosh; Deepika; Tripathi, Malvika; Vaibhav, Pratyush; Kumar, Aman; Kumar, Ritesh; Choudhary, R.J.; Phase, D.M.

    2016-01-01

    The structural, magnetic and magneto-transport of undoped ZnO, Zn_0_._9_7Al_0_._0_3O, Zn_0_._9_5Fe_0_._0_5O and Zn_0_._9_2Al_0_._0_3Fe_0_._0_5O thin films grown on Si(100) substrate using pulsed laser deposition were investigated. The single phase nature of the films is confirmed by X-ray diffraction and Raman spectroscopy measurements. The possibility of Fe metal cluster in Fe doped/co-doped films is ruled out by Fe 2p core level photoelectron spectra. From O 1s core level spectra it is observed that oxygen vacancy is present in all the films. The undoped ZnO film shows magnetic ordering below ∼175 K, whereas Fe doped/codoped samples show magnetic ordering even at 300 K. The Al doped sample reveals paramagnetic behavior. The magneto-transport measurements suggest that the mobile carriers undergo exchange interaction with local magnetic moments. - Highlights: • Al, Fe, Al–Fe co-doped and undoped films of ZnO are deposited on Si by PLD. • Single phase (002) oriented Wurtzite ZnO phase is formed for all films. • Fe doped and Fe–Al co-doped ZnO films reveal magnetic hysteresis at 300 K. • Negative magnetoresistance is observed in undoped and Fe–Al co-doped ZnO film. • It is apparent that charge carriers are coupled with the local magnetic moment.

  6. Effect of Al and Fe doping in ZnO on magnetic and magneto-transport properties

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, Santosh, E-mail: skphysics@yahoo.co.in [Department of Physics, College of Commerce, Arts & Science, Patna 800020, Bihar (India); Deepika [Department of Physics, College of Commerce, Arts & Science, Patna 800020, Bihar (India); Tripathi, Malvika [UGC DAE, Consortium for scientific research, Indore 452001, Madhya Pradesh (India); Vaibhav, Pratyush [Jaypee University of Engineering and Technology, Guna 473226, Madhya Pradesh (India); Kumar, Aman [Indian Institute of Technology, Roorkee (India); Kumar, Ritesh [Department of Physics, College of Commerce, Arts & Science, Patna 800020, Bihar (India); Choudhary, R.J., E-mail: ram@csr.res.in [UGC DAE, Consortium for scientific research, Indore 452001, Madhya Pradesh (India); Phase, D.M. [UGC DAE, Consortium for scientific research, Indore 452001, Madhya Pradesh (India)

    2016-12-01

    The structural, magnetic and magneto-transport of undoped ZnO, Zn{sub 0.97}Al{sub 0.03}O, Zn{sub 0.95}Fe{sub 0.05}O and Zn{sub 0.92}Al{sub 0.03}Fe{sub 0.05}O thin films grown on Si(100) substrate using pulsed laser deposition were investigated. The single phase nature of the films is confirmed by X-ray diffraction and Raman spectroscopy measurements. The possibility of Fe metal cluster in Fe doped/co-doped films is ruled out by Fe 2p core level photoelectron spectra. From O 1s core level spectra it is observed that oxygen vacancy is present in all the films. The undoped ZnO film shows magnetic ordering below ∼175 K, whereas Fe doped/codoped samples show magnetic ordering even at 300 K. The Al doped sample reveals paramagnetic behavior. The magneto-transport measurements suggest that the mobile carriers undergo exchange interaction with local magnetic moments. - Highlights: • Al, Fe, Al–Fe co-doped and undoped films of ZnO are deposited on Si by PLD. • Single phase (002) oriented Wurtzite ZnO phase is formed for all films. • Fe doped and Fe–Al co-doped ZnO films reveal magnetic hysteresis at 300 K. • Negative magnetoresistance is observed in undoped and Fe–Al co-doped ZnO film. • It is apparent that charge carriers are coupled with the local magnetic moment.

  7. Electrodeposition of Cu-doped ZnO nanowire arrays and heterojunction formation with p-GaN for color tunable light emitting diode applications

    International Nuclear Information System (INIS)

    Lupan, O.; Pauporté, T.; Viana, B.; Aschehoug, P.

    2011-01-01

    Highlights: ► High quality copper-doped zinc oxide nanowires were electrochemically grown at low temperature. ► ZnO:Cu nanowires have been epitaxially grown on Mg-doped p-GaN single-crystalline layers. ► The (ZnO:Cu NWs)/(p-GaN:Mg) heterojunction was used to fabricate a light-emitting diode structure. ► The photo- and electroluminescence emission was red-shifted to the violet spectral region compared to pure ZnO. ► The results are of importance for band-gap engineering of ZnO and for color-tunable LED. - Abstract: Copper-doped zinc oxide (ZnO:Cu) nanowires (NWs) were electrochemically deposited at low temperature on fluor-doped tin oxide (FTO) substrates. The electrochemical behavior of the Cu–Zn system for Cu-doped ZnO electrodeposition was studied and the electrochemical reaction mechanism is discussed. The synthesized ZnO arrayed layers were investigated by using SEM, XRD, EDX, photoluminescence and Raman techniques. X-ray diffraction analysis demonstrates a decrease in the lattice parameters of Cu-doped ZnO NWs. Structural analyses show that the nanomaterial is of hexagonal structure with the Cu incorporated in ZnO NWs probably by substituting zinc in the host lattice. Photoluminescence studies on pure and Cu-doped ZnO NWs shows that the near band edge emission is red-shifted by about 5 or 12 nm depending on Cu(II) concentration in the electrolytic bath solution (3 or 6 μmol l −1 ). Cu-doped ZnO NWs have been also epitaxially grown on Mg doped p-GaN single-crystalline layers and the (ZnO:Cu NWs)/(p-GaN:Mg) heterojunction has been used to fabricate a light-emitting diode (LED) structure. The emission was red-shifted to the visible violet spectral region compared to pure ZnO. The present work demonstrates the ability of electrodeposition to produce high quality ZnO nanowires with tailored optical properties by doping. The obtained results are of great importance for further studies on bandgap engineering of ZnO, for color-tunable LED applications

  8. Structural, electrical, and dielectric properties of Cr doped ZnO thin films: Role of Cr concentration

    Energy Technology Data Exchange (ETDEWEB)

    Gürbüz, Osman, E-mail: osgurbuz@yildiz.edu.tr; Okutan, Mustafa

    2016-11-30

    Highlights: • Magnetic material of Cr and semiconductor material of ZnO were grown by the magnetron sputtering co-sputter technique. • Perfect single crystalline structures were grown. • DC and AC conductivity with dielectric properties as a function of frequency (f = 5Hz–13 MHz) at room temperature were measured and compared. • Cr doped ZnO can be used in microwave, sensor and optoelectronic devices as the electrical conductivity increases while dielectric constant decreases with the Cr content. - Abstract: An undoped zinc oxide (ZnO) and different concentrations of chromium (Cr) doped ZnO Cr{sub x}ZnO{sub 1−x} (x = 3.74, 5.67, 8.10, 11.88, and 15.96) thin films were prepared using a magnetron sputtering technique at room temperature. These films were characterized by X-ray diffraction (XRD), High resolution scanning electron microscope (HR-SEM), and Energy dispersive X-ray spectrometry (EDS). XRD patterns of all the films showed that the films possess crystalline structure with preferred orientation along the (100) crystal plane. The average crystallite size obtained was found to be between 95 and 83 nm which was beneficial in high intensity recording peak. Both crystal quality and crystallite sizes decrease with increasing Cr concentration. The crystal and grain sizes of the all film were investigated using SEM analysis. The surface morphology that is grain size changes with increase Cr concentration and small grains coalesce together to form larger grains for the Cr{sub 11.88}ZnO and Cr{sub 15.96}ZnO samples. Impedance spectroscopy studies were carried out in the frequencies ranging from 5 Hz to 13 MHz at room temperature. The undoped ZnO film had the highest dielectric value, while dielectric values of other films decreased as doping concentrations increased. Besides, the dielectric constants decreased whereas the loss tangents increased with increasing Cr content. This was considered to be related to the reduction of grain size as Cr content in ZnO

  9. ZnO quantum dots–decorated ZnO nanowires for the enhancement of antibacterial and photocatalytic performances

    International Nuclear Information System (INIS)

    Wu, Jyh Ming; Tsay, Li-Yi

    2015-01-01

    We demonstrate highly antibacterial activities for killing off Staphylococcus aureus and Escherichia coli using ZnO nanowires decorated with ZnO quantum dots (so-called ZnO QDs/NWs) under visible-light irradiation and dark conditions. The average size of the ZnO QDs is in the range of 3–5 nm; these were uniformly dispersed on the ZnO nanowires’ surface to form the ZnO QDs/NWs. A significant blue-shift effect was observed using photoluminescence (PL) spectra. The size of the ZnO QDs is strongly dependent on the material’s synthesis time. The ZnO QDs/NWs exhibited an excellent photocatalytic activity under visible-light irradiation. The ZnO QDs’ active sites (i.e. the O–H bond and Zn"2"+) accelerate the photogenerated-carrier migration from the QDs to the NWs. As a consequence, the electrons reacted with the dissolved oxygen to form oxygen ions and produced hydroperoxyl radicals to enhance photocatalytic activity. The antibacterial activities (as indicated by R-factor-inhibiting activity) of the ZnO QDs/NWs for killing off Staphylococcus aureus and Escherichia coli is around 4.9 and 5.5 under visible-light irradiation and dark conditions, respectively. The hydroxyl radicals served as an efficient oxidized agent for decomposing the organic dye and microorganism species. The antibacterial activities of the ZnO QDs/NWs in the dark may be attributed to the Zn"2"+ ions that were released from the ZnO QDs and infused into the microbial solution against the growth of bacteria thus disrupting the microorganism. The highly antibacterial and photocatalytic activity of the ZnO QDs/NWs can be well implanted on a screen window, thus offering a promising solution to inhibit the spread of germs under visible-light and dark conditions. (paper)

  10. NW Pacific mid-depth ventilation changes during the Holocene

    Science.gov (United States)

    Rella, S.; Uchida, M.

    2010-12-01

    During the last 50 years the oxygen content of North Pacific Intermediate Water primarily originating in the Okhotsk Sea has declined suggesting decreased mid-depth water circulation, likely leading to changes in biological productivity in the NW Pacific realm and a decrease in CO2 drawdown. It is therefore of high interest to elucidate the climate-oceanic interconnections of the present interglacial period (Holocene) in the NW Pacific, in order to predict possible future climate and surface productivity changes associated with a decrease in mid-depth ventilation in this ecologically sensitive region. However, such efforts have been hampered so far by the lack of appropriate sediment cores with fast sedimentation rates during the Holocene. Core CK05-04 that was recovered in 2005 from off Shimokita peninsula, Japan, at ~1000 m depth shows sedimentation rates of ~80 cm/kyr during the Holocene and therefore presents an ideal opportunity to reconstruct for the first time the Holocene ventilation history of the NW Pacific Ocean. We employ Accelerator Mass Spectroscopy (NIES-TERRA, Tsukuba) radiocarbon analysis of co-existing benthic and planktonic foraminifera to conclude on the ventilation age of the mid-depth water using benthic-planktonic radiocarbon age differences. At the conference we would like to present the results.

  11. Synthesis of High Crystalline Al-Doped ZnO Nanopowders from Al2O3 and ZnO by Radio-Frequency Thermal Plasma

    Directory of Open Access Journals (Sweden)

    Min-Kyeong Song

    2015-01-01

    Full Text Available High crystalline Al-doped ZnO (AZO nanopowders were prepared by in-flight treatment of ZnO and Al2O3 in Radio-Frequency (RF thermal plasma. Micron-sized (~1 μm ZnO and Al2O3 powders were mixed at Al/Zn ratios of 3.3 and 6.7 at.% and then injected into the RF thermal plasma torch along the centerline at a feeding rate of 6.6 g/min. The RF thermal plasma torch system was operated at the plate power level of ~140 kVA to evaporate the mixture oxides and the resultant vapor species were condensed into solid particles by the high flow rate of quenching gas (~7000 slpm. The FE-SEM images of the as-treated powders showed that the multipod shaped and the whisker type nanoparticles were mainly synthesized. In addition, these nanocrystalline structures were confirmed as the single phase AZO nanopowders with the hexagonal wurtzite ZnO structure by the XRD patterns and FE-TEM results with the SAED image. However, the composition changes of 0.3 and 1.0 at.% were checked for the as-synthesized AZO nanopowders at Al/Zn ratios of 3.3 and 6.7 at.%, respectively, by the XRF data, which can require the adjustment of Al/Zn in the mixture precursors for the applications of high Al doping concentrations.

  12. PF-AR NW14, a new time-resolved diffraction/scattering beamline

    International Nuclear Information System (INIS)

    Nozawa, Shunsuke; Adachi, Shin-ichi; Tazaki, Ryoko; Takahashi, Jun-ichi; Itatani, Jiro; Daimon, Masahiro; Mori, Takeharu; Sawa, Hiroshi; Kawata, Hiroshi; Koshihara, Shin-ya

    2005-01-01

    NW14 is a new insertion device beamline at the Photon Factory Advanced Ring (PF-AR), which is a unique ring with full-time single-bunched operation, aiming for timeresolved x-ray diffraction/scattering and XAFS experiments. The primary scientific goal of this beamline is to observe the ultrafast dynamics of condensed matter systems such as organic and inorganic crystals, biological systems and liquids triggered by optical pulses. With the large photon fluxes derived from the undulator, it should become possible to take a snapshoot an atomic-scale image of the electron density distribution. By combining a series of images it is possible to produce a movie of the photo-induced dynamics with 50-ps resolution. The construction of the beamline is being funded by the ERATO Koshihara Non-equilibrium Dynamics Project of the Japan Science and Technology Agency (JST), and the beamline will be operational from autumn 2005

  13. PF-AR NW14, a new time-resolved diffraction/scattering beamline

    Science.gov (United States)

    Nozawa, Shunsuke; Adachi, Shin-ichi; Tazaki, Ryoko; Takahashi, Jun-ichi; Itatani, Jiro; Daimon, Masahiro; Mori, Takeharu; Sawa, Hiroshi; Kawata, Hiroshi; Koshihara, Shin-ya

    2005-01-01

    NW14 is a new insertion device beamline at the Photon Factory Advanced Ring (PF-AR), which is a unique ring with full-time single-bunched operation, aiming for timeresolved x-ray diffraction/scattering and XAFS experiments. The primary scientific goal of this beamline is to observe the ultrafast dynamics of condensed matter systems such as organic and inorganic crystals, biological systems and liquids triggered by optical pulses. With the large photon fluxes derived from the undulator, it should become possible to take a snapshoot an atomic-scale image of the electron density distribution. By combining a series of images it is possible to produce a movie of the photo-induced dynamics with 50-ps resolution. The construction of the beamline is being funded by the ERATO Koshihara Non-equilibrium Dynamics Project of the Japan Science and Technology Agency (JST), and the beamline will be operational from autumn 2005.

  14. Controlling growth density and patterning of single crystalline silicon nanowires

    International Nuclear Information System (INIS)

    Chang, Tung-Hao; Chang, Yu-Cheng; Liu, Fu-Ken; Chu, Tieh-Chi

    2010-01-01

    This study examines the usage of well-patterned Au nanoparticles (NPs) as a catalyst for one-dimensional growth of single crystalline Si nanowires (NWs) through the vapor-liquid-solid (VLS) mechanism. The study reports the fabrication of monolayer Au NPs through the self-assembly of Au NPs on a 3-aminopropyltrimethoxysilane (APTMS)-modified silicon substrate. Results indicate that the spin coating time of Au NPs plays a crucial role in determining the density of Au NPs on the surface of the silicon substrate and the later catalysis growth of Si NWs. The experiments in this study employed optical lithography to pattern Au NPs, treating them as a catalyst for Si NW growth. The patterned Si NW structures easily produced and controlled Si NW density. This approach may be useful for further studies on single crystalline Si NW-based nanodevices and their properties.

  15. Effect of Ag doping on the structural, electrical and optical properties of ZnO grown by MOCVD at different substrate temperatures

    Science.gov (United States)

    Ievtushenko, A.; Karpyna, V.; Eriksson, J.; Tsiaoussis, I.; Shtepliuk, I.; Lashkarev, G.; Yakimova, R.; Khranovskyy, V.

    2018-05-01

    ZnO films and nanostructures were deposited on Si substrates by MOCVD using single source solid state zinc acetylacetonate (Zn(AA)) precursor. Doping by silver was realized in-situ via adding 1 and 10 wt. % of Ag acetylacetonate (Ag(AA)) to zinc precursor. Influence of Ag on the microstructure, electrical and optical properties of ZnO at temperature range 220-550 °C was studied by scanning, transmission electron and Kelvin probe force microscopy, photoluminescence and four-point probe electrical measurements. Ag doping affects the ZnO microstructure via changing the nucleation mode into heterogeneous and thus transforming the polycrystalline films into a matrix of highly c-axis textured hexagonally faceted nanorods. Increase of the work function value from 4.45 to 4.75 eV was observed with Ag content increase, which is attributed to Ag behaviour as a donor impurity. It was observed, that near-band edge emission of ZnO NS was enhanced with Ag doping as a result of quenching deep-level emission. Upon high doping of ZnO by Ag it tends to promote the formation of basal plane stacking faults defect, as it was observed by HR TEM and PL study in the case of 10 wt.% of Ag. Based on the results obtained, it is suggested that NS deposition at lower temperatures (220-300 °C) is more favorable for p-type doping of ZnO.

  16. Interface electronic properties of co-evaporated MAPbI3 on ZnO(0001): In situ X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy study

    International Nuclear Information System (INIS)

    Zhou, Xianzhong; Li, Xiaoli; Huang, Feng; Zhong, Dingyong; Liu, Yuan

    2016-01-01

    In this work, the interface electronic properties of ZnO(0001)/CH 3 NH 3 PbI 3 were investigated by both X-ray and ultraviolet photoelectron spectroscopy. The CH 3 NH 3 PbI 3 thin films were grown on single crystalline ZnO(0001) substrate in situ by co-evaporation of PbI 2 and CH 3 NH 3 I at room temperature with various thickness from 1.5 nm to 190 nm. It was found that the conduction band minimum of ZnO lies 0.3 eV below that of CH 3 NH 3 PbI 3 , while the valence band maximum of ZnO lies 2.1 eV below that of CH 3 NH 3 PbI 3 , implying that the electrons can be effectively transported from CH 3 NH 3 PbI 3 to ZnO, and the holes can be blocked in the same time. A PbI 2 rich layer was initially formed at the interface of ZnO(0001)/CH 3 NH 3 PbI 3 during the growth. As a consequence, an interface barrier was built up which may prevent the electron transport at the interface.

  17. Synthesis of Fe-Doped ZnO Nanorods by Rapid Mixing Hydrothermal Method and Its Application for High Performance UV Photodetector

    Directory of Open Access Journals (Sweden)

    Chan Oeurn Chey

    2014-01-01

    Full Text Available We have successfully synthesized Fe-doped ZnO nanorods by a new and simple method in which the adopted approach is by using ammonia as a continuous source of OH- for hydrolysis instead of hexamethylenetetramine (HMT. The energy dispersive X-ray (EDX spectra revealed that the Fe peaks were presented in the grown Fe-doped ZnO nanorods samples and the X-ray photoelectron spectroscopy (XPS results suggested that Fe3+ is incorporated into the ZnO lattice. Structural characterization indicated that the Fe-doped ZnO nanorods grow along the c-axis with a hexagonal wurtzite structure and have single crystalline nature without any secondary phases or clusters of FeO or Fe3O4 observed in the samples. The Fe-doped ZnO nanorods showed room temperature (300 K ferromagnetic magnetization versus field (M-H hysteresis and the magnetization increases from 2.5 μemu to 9.1 μemu for Zn0.99Fe0.01O and Zn0.95Fe0.05O, respectively. Moreover, the fabricated Au/Fe-doped ZnO Schottky diode based UV photodetector achieved 2.33 A/W of responsivity and 5 s of time response. Compared to other Au/ZnO nanorods Schottky devices, the presented responsivity is an improvement by a factor of 3.9.

  18. Room temperature ferromagnetism in Cu doped ZnO

    Science.gov (United States)

    Ali, Nasir; Singh, Budhi; Khan, Zaheer Ahmed; Ghosh, Subhasis

    2018-05-01

    We report the room temperature ferromagnetism in 2% Cu doped ZnO films grown by RF magnetron sputtering in different argon and oxygen partial pressure. X-ray photoelectron spectroscopy was used to ascertain the oxidation states of Cu in ZnO. The presence of defects within Cu-doped ZnO films can be revealed by electron paramagnetic resonance. It has been observed that saturated magnetic moment increase as we increase the zinc vacancies during deposition.

  19. N+ ion-implantation-induced defects in ZnO studied with a slow positron beam

    International Nuclear Information System (INIS)

    Chen, Z Q; Sekiguchi, T; Yuan, X L; Maekawa, M; Kawasuso, A

    2004-01-01

    Undoped ZnO single crystals were implanted with multiple-energy N + ions ranging from 50 to 380 keV with doses from 10 12 to 10 14 cm -2 . Positron annihilation measurements show that vacancy defects are introduced in the implanted layers. The concentration of the vacancy defects increases with increasing ion dose. The annealing behaviour of the defects can be divided into four stages, which correspond to the formation and recovery of large vacancy clusters and the formation and disappearance of vacancy-impurity complexes, respectively. All the implantation-induced defects are removed by annealing at 1200 deg. C. Cathodoluminescence measurements show that the ion-implantation-induced defects act as nonradiative recombination centres to suppress the ultraviolet (UV) emission. After annealing, these defects disappear gradually and the UV emission reappears, which coincides with positron annihilation measurements. Hall measurements reveal that after N + implantation, the ZnO layer still shows n-type conductivity

  20. Converse Piezoelectric Effect Induced Transverse Deflection of a Free-Standing ZnO Microbelt

    KAUST Repository

    Hu, Youfan

    2009-07-08

    We demonstrate the first electric field induced transverse deflection of a single-crystal, free-standing ZnO microbelt as a result of converse piezoelectric effect. For a microbelt growing along the c-axis, a shear stress in the a-c plane can be induced when an electric field E is applied along the a-axis of the wurtzite structure. As amplified by the large aspect ratio of the microbelt that grows along the c-axis, the strain localized near the root can be detected via the transverse deflection perpendicular to the ZnO microbelt. After an experimental approach was carefully designed and possible artifacts were ruled out, the experimentally observed degree of deflection of the microbelt agrees well with the theoretically expected result. The device demonstrated has potential applications as transverse actuators/sensors/switches and electric field induced mechanical deflectors. © 2009 American Chemical Society.

  1. Photoluminescence study of novel phosphorus-doped ZnO nanotetrapods synthesized by chemical vapour deposition

    International Nuclear Information System (INIS)

    Yu Dongqi; Hu Lizhong; Qiao Shuangshuang; Zhang Heqiu; Fu Qiang; Chen Xi; Sun Kaitong; Len, Song-En Andy; Len, L K

    2009-01-01

    Novel phosphorus-doped and undoped single crystal ZnO nanotetrapods were fabricated on sapphire by a simple chemical vapour deposition method, using phosphorus pentoxide (P 2 O 5 ) as the dopant source. The optical properties of the samples were investigated by photoluminescence (PL) spectroscopy. Low-temperature PL measurements of phosphorus-doped and undoped samples were compared, and the results indicated a decrease in deep level defects due to the incorporation of a phosphorus acceptor dopant. The PL spectrum of the phosphorus-doped sample at 10 K exhibited several acceptor-bound exciton related emission peaks. The effect of phosphorus doping on the optical characteristics of the samples was investigated by excitation intensity and temperature dependent PL spectra. The acceptor-binding energies of the phosphorus dopant were estimated to be about 120 meV, in good agreement with the corresponding theoretical and experimental values in phosphorus-doped ZnO films and nanowires.

  2. Fabrication of ZnO Nanowire Based Piezoelectric Generators and Related Structures

    Science.gov (United States)

    Opoku, Charles; Dahiya, Abhishek Singh; Oshman, Christopher; Cayrel, Frederic; Poulin-Vittrant, Guylaine; Alquier, Daniel; Camara, Nicolas

    Using vertically grown hydrothermal ZnO nanowires, we demonstrate the assembly of fully functional piezoelectric energy harvesters on plastics substrates. A seedless hydrothermal process is employed for the growth of single crystalline vertically orientated ZnO NWs at around 100oC. Flexible NG are assembled using ∼7 μm thick PDMS polymer matrix on a 3x3cm substrate. A representative device with an active area of 4cm2 is characterised revealing average output voltage generation of ∼22mV (±1.2) and -32mV (±0.16) in the positive and negative cycles after 3-4mm periodic deflection at 20Hz. A power density of ∼288nW/cm3 is estimated for the device. It is envisaged that such energy scavengers may find potential applications targeting self-powered systems, sensors and on-body charging of electronics.

  3. Spin noise spectroscopy of donor-bound electrons in ZnO

    Science.gov (United States)

    Horn, H.; Balocchi, A.; Marie, X.; Bakin, A.; Waag, A.; Oestreich, M.; Hübner, J.

    2013-01-01

    We investigate the intrinsic spin dynamics of electrons bound to Al impurities in bulk ZnO by optical spin noise spectroscopy. Spin noise spectroscopy enables us to investigate the longitudinal and transverse spin relaxation time with respect to nuclear and external magnetic fields in a single spectrum. On one hand, the spin dynamic is dominated by the intrinsic hyperfine interaction with the nuclear spins of the naturally occurring 67Zn isotope. We measure a typical spin dephasing time of 23 ns, in agreement with the expected theoretical values. On the other hand, we measure a third, very high spin dephasing rate which is attributed to a high defect density of the investigated ZnO material. Measurements of the spin dynamics under the influence of transverse as well as longitudinal external magnetic fields unambiguously reveal the intriguing connections of the electron spin with its nuclear and structural environment.

  4. Transition from diamagnetic to ferromagnetic state in laser ablated nitrogen doped ZnO thin films

    Directory of Open Access Journals (Sweden)

    Kajal Jindal

    2015-02-01

    Full Text Available Transition from room temperature diamagnetic to ferromagnetic state in N doped ZnO (ZnO:N films grown by pulsed laser deposition with tunable energy density has been identified. ZnO:N films deposited with moderate laser energy density of 2.5 J/cm2 are single phase and nearly defect free having N dopant substitution at O sites in ZnO lattice, exhibiting intrinsic ferromagnetism. When energy density reduces (<2.5 J/cm2, defects in ZnO:N film degrades ferromagnetism and exhibit diamagnetic phase when grown at energy density of 1.0 J/cm2. Growth kinetics, which in turn depends on laser energy density is playing important role in making transition from ferromagnetic to diamagnetic in ZnO:N films.

  5. Synthesis and photoluminescence of a full zinc blende phase ZnO nanorod array

    International Nuclear Information System (INIS)

    Zhou Shaomin; Gong Hechun; Zhang Bin; Du Zuliang; Zhang Xingtang; Wu Sixin

    2008-01-01

    A single-crystalline ZnO nanorod array with rectangular cross-sections has been synthesized, in which the as-obtained products are a complete metastable zinc blende (ZB) phase. X-ray powder diffraction, electron microscopy, and elemental maps have been used to show that the ZB-ZnO samples have a lattice constant a = 4.580 A, and are free from contamination by hexagonal wurtzite (HW) ZnO. Based on our experimental data, the associated growth mechanism is tentatively suggested. In addition, the photoluminescence (PL) spectrum (about 400 nm (3.1 eV)) of the as-fabricated ZB-ZnO products was detected; this is the first experimental report of the optical properties of ZB-ZnO nanorod arrays

  6. Evolution of native point defects in ZnO bulk probed by positron annihilation spectroscopy

    Science.gov (United States)

    Peng, Cheng-Xiao; Wang, Ke-Fan; Zhang, Yang; Guo, Feng-Li; Weng, Hui-Min; Ye, Bang-Jiao

    2009-05-01

    This paper studies the evolution of native point defects with temperature in ZnO single crystals by positron lifetime and coincidence Doppler broadening (CDB) spectroscopy, combined with the calculated results of positron lifetime and electron momentum distribution. The calculated and experimental results of the positron lifetime in ZnO bulk ensure the presence of zinc monovacancy, and zinc monovacancy concentration begins to decrease above 600 °C annealing treatment. CDB is an effective method to distinguish the elemental species, here we combine this technique with calculated electron momentum distribution to determine the oxygen vacancies, which do not trap positrons due to their positive charge. The CDB spectra show that oxygen vacancies do not appear until 600 °C annealing treatment, and increase with the increase of annealing temperature. This study supports the idea that green luminescence has a close relation with oxygen vacancies.

  7. ZnO buffer layer for metal films on silicon substrates

    Science.gov (United States)

    Ihlefeld, Jon

    2014-09-16

    Dramatic improvements in metallization integrity and electroceramic thin film performance can be achieved by the use of the ZnO buffer layer to minimize interfacial energy between metallization and adhesion layers. In particular, the invention provides a substrate metallization method utilizing a ZnO adhesion layer that has a high work of adhesion, which in turn enables processing under thermal budgets typically reserved for more exotic ceramic, single-crystal, or metal foil substrates. Embodiments of the present invention can be used in a broad range of applications beyond ferroelectric capacitors, including microelectromechanical systems, micro-printed heaters and sensors, and electrochemical energy storage, where integrity of metallized silicon to high temperatures is necessary.

  8. Evolution of native point defects in ZnO bulk probed by positron annihilation spectroscopy

    International Nuclear Information System (INIS)

    Cheng-Xiao, Peng; Ke-Fan, Wang; Yang, Zhang; Feng-Li, Guo; Hui-Min, Weng; Bang-Jiao, Ye

    2009-01-01

    This paper studies the evolution of native point defects with temperature in ZnO single crystals by positron lifetime and coincidence Doppler broadening (CDB) spectroscopy, combined with the calculated results of positron lifetime and electron momentum distribution. The calculated and experimental results of the positron lifetime in ZnO bulk ensure the presence of zinc monovacancy, and zinc monovacancy concentration begins to decrease above 600 °C annealing treatment. CDB is an effective method to distinguish the elemental species, here we combine this technique with calculated electron momentum distribution to determine the oxygen vacancies, which do not trap positrons due to their positive charge. The CDB spectra show that oxygen vacancies do not appear until 600 °C annealing treatment, and increase with the increase of annealing temperature. This study supports the idea that green luminescence has a close relation with oxygen vacancies

  9. Structure of (Ga2O3)2(ZnO)13 and a unified description of the homologous series (Ga2O3)2(ZnO)(2n + 1).

    Science.gov (United States)

    Michiue, Yuichi; Kimizuka, Noboru; Kanke, Yasushi; Mori, Takao

    2012-06-01

    The structure of (Ga(2)O(3))(2)(ZnO)(13) has been determined by a single-crystal X-ray diffraction technique. In the monoclinic structure of the space group C2/m with cell parameters a = 19.66 (4), b = 3.2487 (5), c = 27.31 (2) Å, and β = 105.9 (1)°, a unit cell is constructed by combining the halves of the unit cell of Ga(2)O(3)(ZnO)(6) and Ga(2)O(3)(ZnO)(7) in the homologous series Ga(2)O(3)(ZnO)(m). The homologous series (Ga(2)O(3))(2)(ZnO)(2n + 1) is derived and a unified description for structures in the series is presented using the (3+1)-dimensional superspace formalism. The phases are treated as compositely modulated structures consisting of two subsystems. One is constructed by metal ions and another is by O ions. In the (3 + 1)-dimensional model, displacive modulations of ions are described by the asymmetric zigzag function with large amplitudes, which was replaced by a combination of the sawtooth function in refinements. Similarities and differences between the two homologous series (Ga(2)O(3))(2)(ZnO)(2n + 1) and Ga(2)O(3)(ZnO)(m) are clarified in (3 + 1)-dimensional superspace. The validity of the (3 + 1)-dimensional model is confirmed by the refinements of (Ga(2)O(3))(2)(ZnO)(13), while a few complex phenomena in the real structure are taken into account by modifying the model.

  10. Optical Properties of ZnO Nanoparticles Capped with Polymers

    Directory of Open Access Journals (Sweden)

    Atsushi Noguchi

    2011-06-01

    Full Text Available Optical properties of ZnO nanoparticles capped with polymers were investigated. Polyethylene glycol (PEG and polyvinyl pyrrolidone (PVP were used as capping reagents. ZnO nanoparticles were synthesized by the sol-gel method. Fluorescence and absorption spectra were measured. When we varied the timing of the addition of the polymer to the ZnO nanoparticle solution, the optical properties were drastically changed. When PEG was added to the solution before the synthesis of ZnO nanoparticles, the fluorescence intensity increased. At the same time, the total particle size increased, which indicated that PEG molecules had capped the ZnO nanoparticles. The capping led to surface passivation, which increased fluorescence intensity. However, when PEG was added to the solution after the synthesis of ZnO nanoparticles, the fluorescence and particle size did not change. When PVP was added to the solution before the synthesis of ZnO nanoparticles, aggregation of nanoparticles occurred. When PVP was added to the solution after the synthesis of ZnO nanoparticles, fluorescence and particle size increased. This improvement of optical properties is advantageous to the practical usage of ZnO nanoparticles, such as bioimaging

  11. Preparation of ZnO nanocrystals via ultrasonic irradiation

    DEFF Research Database (Denmark)

    Qian, D.; Jiang, Jianzhong; Hansen, P. L.

    2003-01-01

    A simple and rapid process has been developed for the preparation of nanometer-sized ZnO crystals via ultrasonic irradiation, by which pure ZnO nanocrystals with an average size of 6 nm and narrow size distribution can be synthesized in a short time and without using any solvents for the precipit......A simple and rapid process has been developed for the preparation of nanometer-sized ZnO crystals via ultrasonic irradiation, by which pure ZnO nanocrystals with an average size of 6 nm and narrow size distribution can be synthesized in a short time and without using any solvents...

  12. ZnO Luminescence and scintillation studied via photoexcitation, X-ray excitation, and gamma-induced positron spectroscopy

    Science.gov (United States)

    Ji, J.; Colosimo, A. M.; Anwand, W.; Boatner, L. A.; Wagner, A.; Stepanov, P. S.; Trinh, T. T.; Liedke, M. O.; Krause-Rehberg, R.; Cowan, T. E.; Selim, F. A.

    2016-08-01

    The luminescence and scintillation properties of ZnO single crystals were studied by photoluminescence and X-ray-induced luminescence (XRIL) techniques. XRIL allowed a direct comparison to be made between the near-band emission (NBE) and trap emissions providing insight into the carrier recombination efficiency in the ZnO crystals. It also provided bulk luminescence measurements that were not affected by surface states. The origin of a green emission, the dominant trap emission in ZnO, was then investigated by gamma-induced positron spectroscopy (GIPS) - a unique defect spectroscopy method that enables positron lifetime measurements to be made for a sample without contributions from positron annihilation in the source materials. The measurements showed a single positron decay curve with a 175 ps lifetime component that was attributed to Zn vacancies passivated by hydrogen. Both oxygen vacancies and hydrogen-decorated Zn vacancies were suggested to contribute to the green emission. By combining scintillation measurements with XRIL, the fast scintillation in ZnO crystals was found to be strongly correlated with the ratio between the defect luminescence and NBE. This study reports the first application of GIPS to semiconductors, and it reveals the great benefits of the XRIL technique for the study of emission and scintillation properties of materials.

  13. Sustainable synthesis of metals-doped ZnO nanoparticles from zinc-bearing dust for photodegradation of phenol

    International Nuclear Information System (INIS)

    Wu, Zhao-Jin; Huang, Wei; Cui, Ke-Ke; Gao, Zhi-Fang; Wang, Ping

    2014-01-01

    Highlights: • Multi-doped ZnO (M-ZnO) was prepared from Zn-bearing dust for waste-cleaning-waste. • All the dopants M (Fe, Mg, Ca and Al) and Zn are recovered from the dust. • Doping by the dust-derived M expands excitability of ZnO to visible light region. • M-ZnO has good catalytic activity in the degradation of phenol under visible light. - Abstract: A novel strategy of waste-cleaning-waste is proposed in the present work. A metals-doped ZnO (M-ZnO, M = Fe, Mg, Ca and Al) nanomaterial has been prepared from a metallurgical zinc-containing solid waste “fabric filter dust” by combining sulfolysis and co-precipitation processes, and is found to be a favorable photocatalyst for photodegradation of organic substances in wastewater under visible light irradiation. All the zinc and dopants (Fe, Mg, Ca and Al) for preparing M-ZnO are recovered from the fabric filter dust, without any addition of chemical as elemental source. The dust-derived M-ZnO samples deliver single phase indexed as the hexagonal ZnO crystal, with controllable dopants species. The photocatalytic activity of the dust-derived M-ZnO samples is characterized by photodegradation of phenol aqueous solution under visible light irradiation, giving more prominent photocatalytic behaviors than undoped ZnO. Such enhancements may be attributed to incorporation of the dust-derived metal elements (Fe, Mg, Ca and Al) into ZnO structure, which lead to the modification of band gap and refinement of grain size. The results show a feasibility to utilize the industrial waste as a resource of photodegradating organic substances in wastewater treatments

  14. Controlling charges distribution at the surface of a single GaN nanowire by in-situ strain

    Directory of Open Access Journals (Sweden)

    Xiao Chen

    2017-08-01

    Full Text Available Effect of the strain on the charge distribution at the surface of a GaN semiconductor nanowire (NW has been investigated inside transmission electron microscope (TEM by in-situ off-axis electron holography. The outer and inner surfaces of the NW bent axially under compression of two Au electrodes were differently strained, resulting in difference of their Fermi levels. Consequently, the free electrons flow from the high Fermi level to the low level until the two Fermi levels aligned in a line. The potential distributions induced by charge redistribution in the two vacuum sides of the bent NW were examined respectively, and the opposite nature of the bounded charges on the outer and inner surfaces of the bent NW was identified. The results provide experimental evidence that the charge distribution at the surfaces of a single GaN NW can be controlled by different strains created along the NW.

  15. Preparation, structural and optical characterization of ZnO, ZnO: Al nanopowder

    Energy Technology Data Exchange (ETDEWEB)

    Mohan, R. Raj [Department of ECE, Gojan School of Business and Technology, Chennai (India); Rajendran, K. [Department of Electronics, Government Arts College for Women, Ramanathapuram, TN (India); Sambath, K. [Department of ECS, Sri Krishna Arts and Science College, Coimbatore, TN (India)

    2014-01-28

    In this paper, ZnO and ZnO:Al nanopowders have been synthesized by low cost hydrothermal method. Zinc nitrate, hexamethylenetetramine (HMT) and aluminium nitrate are used as precursors for ZnO and AZO with different molar ratios. The structural and optical characterization of doped and un-doped ZnO powders have been investigated by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy dispersive X-ray spectroscopy (EDAX), photoluminescence (PL) and ultra violet visible (UV-Vis) absorption studies. The SEM results show that the hydrothermal synthesis can be used to obtain nanoparticles with different morphology. It is observed that the grain size of the AZO nanoparticles increased with increasing of Al concentration. The PL measurement of AZO shows that broad range of green emission around 550nm with high intensity. The green emission resulted mainly because of intrinsic defects.

  16. Improving ultraviolet photodetection of ZnO nanorods by Cr doped ZnO encapsulation process

    Science.gov (United States)

    Safa, S.; Mokhtari, S.; Khayatian, A.; Azimirad, R.

    2018-04-01

    Encapsulated ZnO nanorods (NRs) with different Cr concentration (0-4.5 at.%) were prepared in two different steps. First, ZnO NRs were grown by hydrothermal method. Then, they were encapsulated by dip coating method. The prepared samples were characterized by X-ray diffraction (XRD), scanning electron microscopy, and ultraviolet (UV)-visible spectrophotometer analyses. XRD analysis proved that Cr incorporated into the ZnO structure successfully. Based on optical analysis, band gap changes in the range of 2.74-3.84 eV. Finally, UV responses of all samples were deeply investigated. It revealed 0.5 at.% Cr doped sample had the most photocurrent (0.75 mA) and photoresponsivity (0.8 A/W) of all which were about three times greater than photocurrent and photoresponsivity of the undoped sample.

  17. Photoluminescence lineshape of ZnO

    Directory of Open Access Journals (Sweden)

    Bruno Ullrich

    2014-12-01

    Full Text Available The merger of the absorption coefficient dispersion, retrieved from transmission by the modified Urbach rule introduced by Ullrich and Bouchenaki [Jpn. J. Appl. Phys. 30, L1285, 1991], with the extended Roosbroeck-Shockley relation reveals that the optical absorption in ZnO distinctively determines the photoluminescence lineshape. Additionally, the ab initio principles employed enable the accurate determination of the carrier lifetime without further specific probing techniques.

  18. Spin noise spectroscopy of ZnO

    Science.gov (United States)

    Horn, H.; Berski, F.; Balocchi, A.; Marie, X.; Mansur-Al-Suleiman, M.; Bakin, A.; Waag, A.; Hübner, J.; Oestreich, M.

    2013-12-01

    We investigate the thermal equilibrium dynamics of electron spins bound to donors in nanoporous ZnO by optical spin noise spectroscopy. The spin noise spectra reveal two noise contributions: A weak spin noise signal from undisturbed localized donor electrons with a dephasing time of 24 ns due to hyperfine interaction and a strong spin noise signal with a spin dephasing time of 5 ns which we attribute to localized donor electrons which interact with lattice defects.

  19. Spin noise spectroscopy of ZnO

    Energy Technology Data Exchange (ETDEWEB)

    Horn, H.; Berski, F.; Hübner, J.; Oestreich, M. [Institute for Solid State Physics, Leibniz Universität Hannover, Appelstr. 2, 30167 Hannover (Germany); Balocchi, A.; Marie, X. [INSA-CNRS-UPS, LPCNO, Université de Toulouse, 135 Av. de Rangueil, 31077 Toulouse (France); Mansur-Al-Suleiman, M.; Bakin, A.; Waag, A. [Institute of Semiconductor Technology, Technische Universität Braunschweig, Hans-Sommer-Straße 66, 38106 Braunschweig (Germany)

    2013-12-04

    We investigate the thermal equilibrium dynamics of electron spins bound to donors in nanoporous ZnO by optical spin noise spectroscopy. The spin noise spectra reveal two noise contributions: A weak spin noise signal from undisturbed localized donor electrons with a dephasing time of 24 ns due to hyperfine interaction and a strong spin noise signal with a spin dephasing time of 5 ns which we attribute to localized donor electrons which interact with lattice defects.

  20. Ultrasonic synthesis of fern-like ZnO nanoleaves and their enhanced photocatalytic activity

    International Nuclear Information System (INIS)

    Ma, Qing Lan; Xiong, Rui; Zhai, Bao-gai; Huang, Yuan Ming

    2015-01-01

    Graphical abstract: - Highlights: • Fern-like ZnO nanoleaves were synthesized by ultrasonicating Zn microcrystals in water. • A fern-like ZnO nanoleaf is a self-assembly of ZnO nanoplates along one ZnO nanorod. • Fern-like ZnO nanoleaves exhibit enhanced photocatalytic activity than ZnO nanocrystals. • The branched hierarchical structures are responsible for the enhanced photocatalytic activity. - Abstract: Two-dimensional fern-like ZnO nanoleaves were synthesized by ultrasonicating zinc microcrystals in water. The morphology, crystal structure, optical property and photocatalytic activity of the fern-like ZnO nanoleaves were characterized with scanning electron microscopy, X-ray diffraction, transmission electron microscopy, photoluminescence spectroscopy and ultraviolet–visible spectroscopy, respectively. It is found that one fern-like ZnO nanoleaf is composed of one ZnO nanorod as the central trunk and a number of ZnO nanoplates as the side branches in opposite pairs along the central ZnO nanorod. The central ZnO nanorod in the fern-like nanoleaves is about 1 μm long while the side-branching ZnO nanoplates are about 100 nm long and 20 nm wide. Further analysis has revealed that ZnO nanocrystals are the building blocks of the central ZnO nanorod and the side-branching ZnO nanoplates. Under identical conditions, fern-like ZnO nanoleaves exhibit higher photocatalytic activity in photodegrading methyl orange in aqueous solution than spherical ZnO nanocrystals. The first-order photocatalytic rate constant of the fern-like ZnO nanoleaves is about four times as large as that of the ZnO nanoparticles. The branched architecture of the hierarchical nanoleaves is suggested be responsible for the enhanced photocatalytic activity of the fern-like ZnO nanoleaves

  1. Photoluminescent ZnO Nanoparticles and Their Biological Applications

    Directory of Open Access Journals (Sweden)

    Zheng-Yong Zhang

    2015-05-01

    Full Text Available During the past decades, numerous achievements concerning luminescent zinc oxide nanoparticles (ZnO NPs have been reported due to their improved luminescence and good biocompatibility. The photoluminescence of ZnO NPs usually contains two parts, the exciton-related ultraviolet (UV emission and the defect-related visible emission. With respect to the visible emission, many routes have been developed to synthesize and functionalize ZnO NPs for the applications in detecting metal ions and biomolecules, biological fluorescence imaging, nonlinear multiphoton imaging, and fluorescence lifetime imaging. As the biological applications of ZnO NPs develop rapidly, the toxicity of ZnO NPs has attracted more and more attention because ZnO can produce the reactive oxygen species (ROS and release Zn2+ ions. Just as a coin has two sides, both the drug delivery and the antibacterial effects of ZnO NPs become attractive at the same time. Hence, in this review, we will focus on the progress in the synthetic methods, luminescent properties, and biological applications of ZnO NPs.

  2. Variable range hopping in ZnO films

    Science.gov (United States)

    Ali, Nasir; Ghosh, Subhasis

    2018-04-01

    We report the variable range hopping in ZnO films grown by RF magnetron sputtering in different argon and oxygen partial pressure. It has been found that Mott variable range hopping dominant over Efros variable range hopping in all ZnO films. It also has been found that hopping distance and energy increases with increasing oxygen partial pressure.

  3. Photochemical events during photosensitization of colloidal ZnO ...

    Indian Academy of Sciences (India)

    The photosensitization of colloidal ZnO nanoparticles with riboflavin (RF) was investigated using absorption, fluorescence spectroscopic measurements and time resolved fluorescence measurements. Riboflavin adsorbed strongly on the surface of ZnO nanoparticles. Apparent association constant was obtained from the ...

  4. Fast synthesize ZnO quantum dots via ultrasonic method.

    Science.gov (United States)

    Yang, Weimin; Zhang, Bing; Ding, Nan; Ding, Wenhao; Wang, Lixi; Yu, Mingxun; Zhang, Qitu

    2016-05-01

    Green emission ZnO quantum dots were synthesized by an ultrasonic sol-gel method. The ZnO quantum dots were synthesized in various ultrasonic temperature and time. Photoluminescence properties of these ZnO quantum dots were measured. Time-resolved photoluminescence decay spectra were also taken to discover the change of defects amount during the reaction. Both ultrasonic temperature and time could affect the type and amount of defects in ZnO quantum dots. Total defects of ZnO quantum dots decreased with the increasing of ultrasonic temperature and time. The dangling bonds defects disappeared faster than the optical defects. Types of optical defects first changed from oxygen interstitial defects to oxygen vacancy and zinc interstitial defects. Then transformed back to oxygen interstitial defects again. The sizes of ZnO quantum dots would be controlled by both ultrasonic temperature and time as well. That is, with the increasing of ultrasonic temperature and time, the sizes of ZnO quantum dots first decreased then increased. Moreover, concentrated raw materials solution brought larger sizes and more optical defects of ZnO quantum dots. Copyright © 2015 Elsevier B.V. All rights reserved.

  5. Influence of Dopants in ZnO Films on Defects

    Science.gov (United States)

    Peng, Cheng-Xiao; Weng, Hui-Min; Zhang, Yang; Ma, Xing-Ping; Ye, Bang-Jiao

    2008-12-01

    The influence of dopants in ZnO films on defects is investigated by slow positron annihilation technique. The results show S that parameters meet SAl > Sun > SAg for Al-doped ZnO films, undoped and Ag-doped ZnO films. Zinc vacancies are found in all ZnO films with different dopants. According to S parameter and the same defect type, it can be induced that the zinc vacancy concentration is the highest in the Al-doped ZnO film, and it is the least in the Ag-doped ZnO film. When Al atoms are doped in the ZnO films grown on silicon substrates, Zn vacancies increase as compared to the undoped and Ag-doped ZnO films. The dopant concentration could determine the position of Fermi level in materials, while defect formation energy of zinc vacancy strongly depends on the position of Fermi level, so its concentration varies with dopant element and dopant concentration.

  6. Ultrasonic-assisted fabrication of superhydrophobic ZnO nanowall ...

    Indian Academy of Sciences (India)

    The results suggested that the synergistic effect of the aluminium oxide seed layer and sonochemical process can enable the formation of ZnO nanowall structures favourable for superhydrophobic property. A possible growth mechanism of ZnO nanowalls formation during sonication process has been discussed in detail.

  7. Hybrid ZnO:polymer bulk heterojunction solar cells from a ZnO precursor

    NARCIS (Netherlands)

    Beek, W.J.E.; Slooff, L.H.; Wienk, M.M.; Kroon, J.M.; Janssen, R.A.J.; Kafafi, Z.H.

    2005-01-01

    We describe a simple and new method to create hybrid bulk heterojunction solar cells consisting of ZnO and conjugated polymers. A gel-forming ZnO precursor, blended with conjugated polymers, is converted into crystalline ZnO at temperatures as low as 110 °C. In-situ formation of ZnO in MDMO-PPV

  8. Effect of polyacrylamide on morphology and electromagnetic properties of chrysanthemum-like ZnO particles

    International Nuclear Information System (INIS)

    Jun-Feng, Yan; Zhi-Yong, Zhang; Tian-Gui, You; Wu, Zhao; Jiang-Ni, Yun; Fu-Chun, Zhang

    2009-01-01

    Through hydrothermal process, the chrysanthemum-like ZnO particles are prepared with zinc acetate dihydrate (Zn(CH 3 COO) 2 ·2H 2 O) and sodium hydroxide (NaOH) used as main resources under the different concentrations of surfactant polyacrylamide (PAM). The microstructure, morphology and the electromagnetic properties of the as-prepared products are characterized by high-resolution transmissïon electron microscopy (HRTEM), field emission environment scanning electron microscope (FEESEM) and microwave vector network analyzer, respectively. The experimental results indicate that the as-prepared products are ZnO single crystalline with hexagona wurtzite structure, that the values of slenderness ratio L d are different in different PAM concentrations, and that the good magnetic loss property is found in the ZnO products, and the average magnetic loss tangent tan δ u increases with PAM concentration increasing, while the dielectric loss tangent tan δ e decreases. (cross-disciplinary physics and related areas of science and technology)

  9. A vacuum pressure sensor based on ZnO nanobelt film

    International Nuclear Information System (INIS)

    Zheng, X J; Cao, X C; Sun, J; Yuan, B; Zhu, Z; Zhang, Y; Li, Q H

    2011-01-01

    A vacuum pressure sensor was fabricated by assembling ZnO nanobelt film on the interdigital electrodes, and the current-voltage characteristics were measured with an Agilent semiconductor parameter tester. Under different pressures of 1.0 x 10 3 , 6.7 x 10 -3 , 8.2 x 10 -4 and 9.5 x 10 -5 mbar, the currents are 8.71, 28.1, 46.1 and 89.6 nA, and the pressure sensitive resistances are 1150, 356, 217 and 112 MΩ, respectively. In the range of 10 -5 -10 3 mbar the smaller the pressure is, the higher the current is. The pressure sensitive resistance of the vacuum pressure sensor increases linearly with the logarithmic pressure, and the measurement range is at least one order of magnitude wider than that of the previous sensors. Under the final pressure, the vacuum pressure sensor has maximum sensitivity (9.29) and power consumption of 0.9 μW. The sensitivity is larger than that of the previous sensor based on a ZnO single nanowire at that pressure, and the power consumption is much lower than that for the sensor based on a ZnO nanowire array. The pressure sensitive mechanism is reasonably explained by using oxygen chemisorption and energy band theory.

  10. Thermal growth and cathodoluminescence of Bi doped ZnO nanowires and rods

    Energy Technology Data Exchange (ETDEWEB)

    Aleman, B; Hidalgo, P; Fernandez, P; Piqueras, J, E-mail: balemanl@fis.ucm.e [Departamento de Fisica de Materiales, Facultad de Ciencias FIsicas, Universidad Complutense de Madrid, 28040 Madrid (Spain)

    2009-11-21

    Bi doped ZnO nanowires and rods have been grown by a catalyst free evaporation-deposition method with precursors containing either ZnO and Bi{sub 2}O{sub 3} or ZnS and Bi{sub 2}O{sub 3} powders. The use of ZnS as a precursor was found to lead to a higher density of nano- and microstructures at lower temperatures than by using ZnO. Energy dispersive x-ray spectroscopy (EDS) shows that the Bi content in the wires and rods is in the range 0.15-0.35 at%. Bi incorporation was found to induce a red shift of the near band gap luminescence but no quantitative correlation between the shift and the amount of Bi, as measured by EDS, was observed. The I-V curves of single Bi doped wires had linear behaviour at low current and non-linear behaviour for high currents, qualitatively similar to that of undoped wires.

  11. Are Fe and Co implanted ZnO and III-nitride semiconductors magnetic?

    CERN Document Server

    AUTHOR|(CDS)2081284; Bharuth-Ram, Krish

    The chemical nature, lattice site locations and magnetic behaviour of Fe and/or Co ions implanted in nitrides (GaN, AlN, and InN) and in ZnO have been investigated using Mössbauer spectroscopy and vibrating sample magnetometer (VSM) techniques. Mössbauer data on nitride and $^{56}$Fe pre-implanted ZnO samples were obtained from emission Mössbauer spectroscopy (eMS) measurements at the ISOLDE facility, CERN, following the implantation of radioactive $^{57}$Mn$^{*}$ which $\\beta$$^{-}$decays to the 14.4 keV Mössbauer state of $^{57}$Fe. In addition, conversion electron Mössbauer spectroscopy (CEMS) data were collected on ZnO single crystals co-implanted with $^{57}$Fe + $^{56}$Fe and $^{57}$Fe + $^{59}$Co ions in a box profile. Emission Mössbauer spectra obtained for GaN and AlN reveal magnetic structure in the ‘wings’ assigned to high spin Fe$^{3+}$ weakly coupled to the lattice showing spin-lattice relaxation effects. The observed spin-relaxation rate (τ$^{-1}$) closely follows a ${T}^{2}$ temperat...

  12. Detection of Defect-Induced Magnetism in Low-Dimensional ZnO Structures by Magnetophotocurrent.

    Science.gov (United States)

    Lorite, Israel; Kumar, Yogesh; Esquinazi, Pablo; Zandalazini, Carlos; de Heluani, Silvia Perez

    2015-09-09

    The detection of defect-induced magnetic order in single low-dimensional oxide structures is in general difficult because of the relatively small yield of magnetically ordered regions. In this work, the effect of an external magnetic field on the transient photocurrent measured after light irradiation on different ZnO samples at room temperature is studied. It has been found that a magnetic field produces a change in the relaxation rate of the transient photocurrent only in magnetically ordered ZnO samples. This rate can decrease or increase with field, depending on whether the magnetically ordered region is in the bulk or only at the surface of the ZnO sample. The phenomenon reported here is of importance for the development of magneto-optical low-dimensional oxides devices and provides a new guideline for the detection of magnetic order in low-dimensional magnetic semiconductors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  13. Photocatalysis and Bandgap Engineering Using ZnO Nanocomposites

    Directory of Open Access Journals (Sweden)

    Muhammad Ali Johar

    2015-01-01

    Full Text Available Nanocomposites have a great potential to work as efficient, multifunctional materials for energy conversion and photoelectrochemical reactions. Nanocomposites may reveal more improved photocatalysis by implying the improvements of their electronic and structural properties than pure photocatalyst. This paper presents the recent work carried out on photoelectrochemical reactions using the composite materials of ZnO with CdS, ZnO with SnO2, ZnO with TiO2, ZnO with Ag2S, and ZnO with graphene and graphene oxide. The photocatalytic efficiency mainly depends upon the light harvesting span of a material, lifetime of photogenerated electron-hole pair, and reactive sites available in the photocatalyst. We reviewed the UV-Vis absorption spectrum of nanocomposite and photodegradation reported by the same material and how photodegradation depends upon the factors described above. Finally the improvement in the absorption band edge of nanocomposite material is discussed.

  14. Processing of ZnO nanocrystals by solochemical technique

    International Nuclear Information System (INIS)

    Gusatti, M.; Speckhahn, R.; Silva, L.A.; Rosario, J.A.; Lima, R.B.; Kuhnen, N.C.; Riella, H.G.; Campos, C.E.M.

    2009-01-01

    In the present work, we report the synthesis of high quality ZnO nanocrystals by solochemical technique. This synthetic strategy has been shown to have advantages over other methods of producing nanostructures in terms of low cost, efficiency, simplicity and uniformity of crystal structure. Zinc chloride solution at room temperature was mixed with sodium hydroxide solution at 50°C to produce ZnO nanocrystals. Transmission electronic microscopy (TEM) and X-ray powder diffraction (XRD) were used to characterize the ZnO nanocrystals obtained. The structure of ZnO was refined by the Rietveld Method from X-ray diffraction data. These methods showed that the product consisted of pure ZnO nanocrystals and has, predominantly, a rod-like morphology. (author)

  15. Hydrothermal Growth of Vertically Aligned ZnO Nanorods Using a Biocomposite Seed Layer of ZnO Nanoparticles.

    Science.gov (United States)

    Ibupoto, Zafar Hussain; Khun, Kimleang; Eriksson, Martin; AlSalhi, Mohammad; Atif, Muhammad; Ansari, Anees; Willander, Magnus

    2013-08-19

    Well aligned ZnO nanorods have been prepared by a low temperature aqueous chemical growth method, using a biocomposite seed layer of ZnO nanoparticles prepared in starch and cellulose bio polymers. The effect of different concentrations of biocomposite seed layer on the alignment of ZnO nanorods has been investigated. ZnO nanorods grown on a gold-coated glass substrate have been characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FESEM) techniques. These techniques have shown that the ZnO nanorods are well aligned and perpendicular to the substrate, and grown with a high density and uniformity on the substrate. Moreover, ZnO nanorods can be grown with an orientation along the c -axis of the substrate and exhibit a wurtzite crystal structure with a dominant (002) peak in an XRD spectrum and possessed a high crystal quality. A photoluminescence (PL) spectroscopy study of the ZnO nanorods has revealed a conventional near band edge ultraviolet emission, along with emission in the visible part of the electromagnetic spectrum due to defect emission. This study provides an alternative method for the fabrication of well aligned ZnO nanorods. This method can be helpful in improving the performance of devices where alignment plays a significant role.

  16. Hydrothermal Growth of Vertically Aligned ZnO Nanorods Using a Biocomposite Seed Layer of ZnO Nanoparticles

    Directory of Open Access Journals (Sweden)

    Zafar Hussain Ibupoto

    2013-08-01

    Full Text Available Well aligned ZnO nanorods have been prepared by a low temperature aqueous chemical growth method, using a biocomposite seed layer of ZnO nanoparticles prepared in starch and cellulose bio polymers. The effect of different concentrations of biocomposite seed layer on the alignment of ZnO nanorods has been investigated. ZnO nanorods grown on a gold-coated glass substrate have been characterized by X-ray diffraction (XRD and field emission scanning electron microscopy (FESEM techniques. These techniques have shown that the ZnO nanorods are well aligned and perpendicular to the substrate, and grown with a high density and uniformity on the substrate. Moreover, ZnO nanorods can be grown with an orientation along the c-axis of the substrate and exhibit a wurtzite crystal structure with a dominant (002 peak in an XRD spectrum and possessed a high crystal quality. A photoluminescence (PL spectroscopy study of the ZnO nanorods has revealed a conventional near band edge ultraviolet emission, along with emission in the visible part of the electromagnetic spectrum due to defect emission. This study provides an alternative method for the fabrication of well aligned ZnO nanorods. This method can be helpful in improving the performance of devices where alignment plays a significant role.

  17. Trioctylphosphine-assisted morphology control of ZnO nanoparticles

    Science.gov (United States)

    Hong, Yun-Kun; Cho, GeonHee; Park, YoonSu; Oh, Soong Ju; Ha, Don-Hyung

    2018-06-01

    This study investigates the morphological change in colloidal ZnO nanoparticles (NPs) synthesized with trioctylphosphine (TOP). The addition of TOP to the synthesis causes an evolution in the shape of ZnO NPs to tadpole-like particles from quasi-spherical particles at 300 °C. The total length of the tadpole-like ZnO NPs can be modified by controlling the molar ratio of TOP to oleylamine (OLAM). The tadpole-like particles are elongated as the concentration of TOP increased but decreased when the addition of TOP is excessive. These tadpole-like ZnO NPs transform to quasi-spherical NPs regardless of the amount of TOP at a reaction time of 3 h at 300 °C. At 200 °C, the effect of TOP on the ZnO NP synthesis differs from that at 300 °C. The ZnO NPs synthesized by controlling the molar ratios of surfactant ligands (TOP:OLAM = 2:100 and 70:100) at 200 °C share similar amorphous structures, while a crystalline ZnO phase is formed when the reaction time is 3 h. X-ray photoelectron spectroscopy analysis shows that TOP influences the oxidation of ZnO and suggests that a combination of OLAM and TOP plays a role in controlling the shape of ZnO NPs. These results provide critical insights to the utilization of TOP for a shape controlling ligand in ZnO NPs and suggest a new route to design oxide NPs.

  18. Morphological transition of ZnO nanostructures influenced by magnesium doping

    International Nuclear Information System (INIS)

    Premkumar, T.; Zhou, Y.S.; Gao, Y.; Baskar, K.; Jiang, L.; Lu, Y.F.

    2012-01-01

    Wurtzite zinc oxide (ZnO) nanochains have been synthesized through high-pressure pulsed laser deposition. The chain-like ZnO nanostructures were obtained from magnesium (Mg) doped ZnO targets, whereas vertically aligned nanorods were obtained from primitive ZnO targets. The Mg doping has influenced the morphological transition of ZnO nanostructures from nanorods to nanochains. The field emission scanning electron microscope images revealed the growth of beaded ZnO nanochains. The ZnO nanochains of different diameters 40 and 120 nm were obtained. The corresponding micro-Raman spectra showed strong E 2H mode of ZnO, which confirmed the good crystallinity of the nanochains. In addition to near band edge emission at 3.28 eV, ZnO nanochains show broad deep level emission at 2.42 eV than that of ZnO nanorods.

  19. Ag3PO4/ZnO: An efficient visible-light-sensitized composite with its application in photocatalytic degradation of Rhodamine B

    International Nuclear Information System (INIS)

    Liu, Wei; Wang, Mingliang; Xu, Chunxiang; Chen, Shifu; Fu, Xianliang

    2013-01-01

    Graphical abstract: The free OH radicals generated in the VB of ZnO play the primary role in the visible-light photocatalytic degradation of RhB in Ag 3 PO 4 /ZnO system. The accumulated electrons in the CB of Ag 3 PO 4 can be transferred to O 2 adsorbed on the surface of the composite semiconductors and H 2 O 2 yields. H 2 O 2 reacts with electrons in succession to produce active ·OH to some extent. Display Omitted Highlights: ► Efficient visible-light-sensitized Ag 3 PO 4 /ZnO composites were successfully prepared. ► Effect of Ag 3 PO 4 content on the catalytic activity of Ag 3 PO 4 /ZnO is studied in detail. ► Rate constant of RhB degradation over Ag 3 PO 4 (3.0 wt.%)/ZnO is 3 times that of Ag 3 PO 4 . ► The active species in RhB degradation are examined by adding a series of scavengers. ► Visible light degradation mechanism of RhB over Ag 3 PO 4 /ZnO is systematically studied. -- Abstract: The efficient visible-light-sensitized Ag 3 PO 4 /ZnO composites with various weight percents of Ag 3 PO 4 were prepared by a facile ball milling method. The photocatalysts were characterized by XRD, DRS, SEM, EDS, XPS, and BET specific area. The ·OH radicals produced during the photocatalytic reaction was detected by the TA–PL technique. The photocatalytic property of Ag 3 PO 4 /ZnO was evaluated by photocatalytic degradation of Rhodamine B under visible light irradiation. Significantly, the results revealed that the photocatalytic activity of the composites was much higher than that of pure Ag 3 PO 4 and ZnO. The rate constant of RhB degradation over Ag 3 PO 4 (3.0 wt.%)/ZnO is 3 times that of single-phase Ag 3 PO 4 . The optimal percentage of Ag 3 PO 4 in the composite is 3.0 wt.%. It is proposed that the ·OH radicals produced in the valence band of ZnO play the leading role in the photocatalytic degradation of Rhodamine B by Ag 3 PO 4 /ZnO systems under visible light irradiation.

  20. Modulation of defect-mediated energy transfer from ZnO nanoparticles for the photocatalytic degradation of bilirubin

    Directory of Open Access Journals (Sweden)

    Tanujjal Bora

    2013-11-01

    Full Text Available In recent years, nanotechnology has gained significant interest for applications in the medical field. In this regard, a utilization of the ZnO nanoparticles for the efficient degradation of bilirubin (BR through photocatalysis was explored. BR is a water insoluble byproduct of the heme catabolism that can cause jaundice when its excretion is impaired. The photocatalytic degradation of BR activated by ZnO nanoparticles through a non-radiative energy transfer pathway can be influenced by the surface defect-states (mainly the oxygen vacancies of the catalyst nanoparticles. These were modulated by applying a simple annealing in an oxygen-rich atmosphere. The mechanism of the energy transfer process between the ZnO nanoparticles and the BR molecules adsorbed at the surface was studied by using steady-state and picosecond-resolved fluorescence spectroscopy. A correlation of photocatalytic degradation and time-correlated single photon counting studies revealed that the defect-engineered ZnO nanoparticles that were obtained through post-annealing treatments led to an efficient decomposition of BR molecules that was enabled by Förster resonance energy transfer.

  1. Cycling behaviour of sponge-like nanostructured ZnO as thin-film Li-ion battery anodes

    International Nuclear Information System (INIS)

    Garino, Nadia; Lamberti, Andrea; Gazia, Rossana; Chiodoni, Angelica; Gerbaldi, Claudio

    2014-01-01

    Highlights: • Zn is thermally oxidized in ambient air to obtain sponge-like ZnO film. • Polycrystalline, transparent, porous thin film is obtained. • Film exhibits stabile specific capacity (∼300 mAh g −1 ) after prolonged cycling. • Sponge-like ZnO film shows promising prospects as Li-ion battery anode. - Abstract: Single phase wurtzitic porous ZnO thin films are obtained by a simple two-step method, involving the sputtering deposition of a sponge-like metallic Zn layer, followed by a moderately low temperature treatment for the complete zinc oxidation. Thanks to its 3D nanostructuration, the superimposition of small branches able to grow in length almost isotropically and forming a complex topography, sponge-like ZnO can combine the fast transport properties of one dimensional material and the high surface area usually provided by nanocrystalline electrodes. When galvanostatically tested in lithium cell, after the initial decay, it can provide an almost stable specific capacity higher than 50 μAh cm −2 after prolonged cycling at estimated 0.7 C, with very high Coulombic efficiency

  2. Sustainable synthesis of metals-doped ZnO nanoparticles from zinc-bearing dust for photodegradation of phenol.

    Science.gov (United States)

    Wu, Zhao-Jin; Huang, Wei; Cui, Ke-Ke; Gao, Zhi-Fang; Wang, Ping

    2014-08-15

    A novel strategy of waste-cleaning-waste is proposed in the present work. A metals-doped ZnO (M-ZnO, M = Fe, Mg, Ca and Al) nanomaterial has been prepared from a metallurgical zinc-containing solid waste "fabric filter dust" by combining sulfolysis and co-precipitation processes, and is found to be a favorable photocatalyst for photodegradation of organic substances in wastewater under visible light irradiation. All the zinc and dopants (Fe, Mg, Ca and Al) for preparing M-ZnO are recovered from the fabric filter dust, without any addition of chemical as elemental source. The dust-derived M-ZnO samples deliver single phase indexed as the hexagonal ZnO crystal, with controllable dopants species. The photocatalytic activity of the dust-derived M-ZnO samples is characterized by photodegradation of phenol aqueous solution under visible light irradiation, giving more prominent photocatalytic behaviors than undoped ZnO. Such enhancements may be attributed to incorporation of the dust-derived metal elements (Fe, Mg, Ca and Al) into ZnO structure, which lead to the modification of band gap and refinement of grain size. The results show a feasibility to utilize the industrial waste as a resource of photodegradating organic substances in wastewater treatments. Copyright © 2014 Elsevier B.V. All rights reserved.

  3. Application of Thin ZnO ALD Layers in Fiber-Optic Fabry-Pérot Sensing Interferometers

    Directory of Open Access Journals (Sweden)

    Daria Majchrowicz

    2016-03-01

    Full Text Available In this paper we investigated the response of a fiber-optic Fabry-Pérot sensing interferometer with thin ZnO layers deposited on the end faces of the optical fibers forming the cavity. Standard telecommunication single-mode optical fiber (SMF-28 segments were used with the thin ZnO layers deposited by Atomic Layer Deposition (ALD. Measurements were performed with the interferometer illuminated by two broadband sources operating at 1300 nm and 1550 nm. Reflected interference signal was acquired by an optical spectrum analyzer while the length of the air cavity was varied. Thickness of the ZnO layers used in the experiments was 50 nm, 100 nm, and 200 nm. Uncoated SMF-28 fiber was also used as a reference. Based on the results of measurements, the thickness of the ZnO layers and the length of the cavity were selected in order to achieve good visibility. Following, the interferometer was used to determine the refractive index of selected liquids.

  4. Cycling behaviour of sponge-like nanostructured ZnO as thin-film Li-ion battery anodes

    Energy Technology Data Exchange (ETDEWEB)

    Garino, Nadia, E-mail: nadia.garino@iit.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Lamberti, Andrea; Gazia, Rossana; Chiodoni, Angelica [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); Gerbaldi, Claudio, E-mail: claudio.gerbaldi@polito.it [Center for Space Human Robotics @Polito, Istituto Italiano di Tecnologia, Corso Trento, 21, 10129 Turin (Italy); GAME Lab, Department of Applied Science and Technology – DISAT, Politecnico di Torino, C.so Duca degli Abruzzi 24, 10129 Turin (Italy)

    2014-12-05

    Highlights: • Zn is thermally oxidized in ambient air to obtain sponge-like ZnO film. • Polycrystalline, transparent, porous thin film is obtained. • Film exhibits stabile specific capacity (∼300 mAh g{sup −1}) after prolonged cycling. • Sponge-like ZnO film shows promising prospects as Li-ion battery anode. - Abstract: Single phase wurtzitic porous ZnO thin films are obtained by a simple two-step method, involving the sputtering deposition of a sponge-like metallic Zn layer, followed by a moderately low temperature treatment for the complete zinc oxidation. Thanks to its 3D nanostructuration, the superimposition of small branches able to grow in length almost isotropically and forming a complex topography, sponge-like ZnO can combine the fast transport properties of one dimensional material and the high surface area usually provided by nanocrystalline electrodes. When galvanostatically tested in lithium cell, after the initial decay, it can provide an almost stable specific capacity higher than 50 μAh cm{sup −2} after prolonged cycling at estimated 0.7 C, with very high Coulombic efficiency.

  5. A template-free sol-gel technique for controlled growth of ZnO nanorod arrays

    International Nuclear Information System (INIS)

    Huang, N.; Zhu, M.W.; Gao, L.J.; Gong, J.; Sun, C.; Jiang, X.

    2011-01-01

    The growth of ZnO nanorod arrays via a template-free sol-gel process was investigated. The nanorod is single-crystalline wurtzite structure with [0 0 0 1] growth direction determined by the transmission electron microscope. The aligned ZnO arrays were obtained directly on the glass substrates by adjusting the temperatures and the withdrawal speeds, without seed-layer or template assistant. A thicker oriented ZnO nanorod arrays was obtained at proper experimental conditions by adding dip-coating layers. Room temperature photoluminescence spectrum exhibits an intensive UV emission with a weak broad green emission as well as a blue double-peak emission located at 451 and 468 nm, respectively. Further investigation results show that the difference in the alignment of nanorods ascribes to the different orientations of the nanoparticles-packed film formed prior to nanorods on the substrate. Well ordered ZnO nanorods are formed from this film with good c-axis orientation. Our study is expected to pave a way for direct growth of oriented nanorods by low-cost solution approaches.

  6. Iron (III Ion Sensor Based on the Seedless Grown ZnO Nanorods in 3 Dimensions Using Nickel Foam Substrate

    Directory of Open Access Journals (Sweden)

    Mazhar Ali Abbasi

    2013-01-01

    Full Text Available In the present work, the seedless, highly aligned and vertical ZnO nanorods in 3 dimensions (3D were grown on the nickel foam substrate. The seedless grown ZnO nanorods were characterised by field emission scanning electron microscopy (FESEM, high resolution transmission electron microscopy (HRTEM, and X-ray diffraction (XRD techniques. The characterised seedless ZnO nanorods in 3D on nickel foam were highly dense, perpendicular to substrate, grown along the (002 crystal plane, and also composed of single crystal. In addition to this, these seedless ZnO nanorods were functionalized with trans-dinitro-dibenzo-18-6 crown ether, a selective iron (III ion ionophore, along with other components of membrane composition such as polyvinyl chloride (PVC, 2-nitopentylphenyl ether as plasticizer (NPPE, and tetrabutyl ammonium tetraphenylborate (TBATPB as conductivity increaser. The sensor electrode has shown high linearity with a wide range of detection of iron (III ion concentrations from 0.005 mM to 100 mM. The low limit of detection of the proposed ion selective electrode was found to be 0.001 mM. The proposed sensor also described high storage stability, selectivity, reproducibility, and repeatability and a quick response time of less than 10 s.

  7. Effects of high-dose hydrogen implantation on defect formation and dopant diffusion in silver implanted ZnO crystals

    Energy Technology Data Exchange (ETDEWEB)

    Yaqoob, Faisal [Department of Physics, State University of New York at Albany, Albany, New York 12222 (United States); Huang, Mengbing, E-mail: mhuang@sunypoly.edu [College of Nanoscale Science and Engineering, State University of New York Polytechnic Institute, Albany, New York 12203 (United States)

    2016-07-28

    This work reports on the effects of a deep high-dose hydrogen ion implant on damage accumulation, defect retention, and silver diffusion in silver implanted ZnO crystals. Single-crystal ZnO samples were implanted with Ag ions in a region ∼150 nm within the surface, and some of these samples were additionally implanted with hydrogen ions to a dose of 2 × 10{sup 16 }cm{sup −2}, close to the depth ∼250 nm. Rutherford backscattering/ion channeling measurements show that crystal damage caused by Ag ion implantation and the amount of defects retained in the near surface region following post-implantation annealing were found to diminish in the case with the H implantation. On the other hand, the additional H ion implantation resulted in a reduction of substitutional Ag atoms upon post-implantation annealing. Furthermore, the presence of H also modified the diffusion properties of Ag atoms in ZnO. We discuss these findings in the context of the effects of nano-cavities on formation and annihilation of point defects as well as on impurity diffusion and trapping in ZnO crystals.

  8. Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

    Energy Technology Data Exchange (ETDEWEB)

    Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Ozcan, Yusuf [Department of Electricity and Energy, Pamukkale University, Denizli (Turkey); Orujalipoor, Ilghar [Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey); Huang, Yen-Chih; Jeng, U-Ser [National Synchrotron Radiation Research Center, 101 Hsin-Ann Road, Hsinchu Science Park, Hsinchu, Taiwan (China); Ide, Semra [Department of Physics Eng., Hacettepe University, Beytepe, 06800 Ankara (Turkey); Department of Nanotechnology and Nanomedicine, Hacettepe University, Beytepe, 06800 Ankara (Turkey)

    2016-06-07

    In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactive growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.

  9. Uniform distribution of ZnO nanoparticles on the surface of grpahene and its enhanced photocatalytic performance

    Science.gov (United States)

    Xue, Bing; Zou, Yingquan

    2018-05-01

    Herein, a ZnO-graphene nanocomposite photocatalyst was obtained by a facile one-step photochemical method. Both the reduction of graphene oxide (GO) and uniform loading of ZnO nanoparticles (NPs) on the surface of graphene were achieved during the photochemical reaction process using GO as the precursor of graphene and zinc chloride (ZnCl2) as the single source of ZnO. The products were characterized by X-ray diffraction, Fourier transform infrared spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, transmission electron microscopy, and ultraviolet-visible spectroscopy. The photocatalytic activity of ZnO/rGO composites was studied by the photodegradation of methylene blue (MB) dye. The as-prepared ZnO/rGO photocatalyst possesses great adsorptivity of dyes (e.g., MB) and high charge separation properties. After receiving the photoelectrons from ZnO, graphene plane can effectively transfer the photoelectrons, thereby showing highly efficient photocatalytic degradation towards pollutants. The effective introduction of rGO significantly improved the photocatalysis and sensing properties of ZnO, and we believe that the as-prepared ZnO/rGO nanocomposite would be promising for practical applications in future nanotechnology.

  10. Role of oxygen on the optical properties of borate glass doped with ZnO

    International Nuclear Information System (INIS)

    Abdel-Baki, Manal; El-Diasty, Fouad

    2011-01-01

    Lithium tungsten borate glass (0.56-x)B 2 O 3 -0.4Li 2 O-xZnO-0.04WO 3 (0≤x≤0.1 mol%) is prepared by the melt quenching technique for photonic applications. Small relative values of ZnO are used to improve the glass optical dispersion and to probe as well the role of oxygen electronic polarizability on its optical characteristics. The spectroscopic properties of the glass are determined in a wide spectrum range (200-2500 nm) using a Fresnel-based spectrophotometric technique. Based on the Lorentz-Lorenz theory, as ZnO content increases on the expense of B 2 O 3 the glass molar polarizability increased due to an enhanced unshared oxide ion 2p electron density, which increases ionicity of the chemical bonds of glass. The role of oxide ion polarizability is explained in accordance with advanced measures and theories such as optical basicity, O 1s binding energy, the outer most cation binding energy in Yamashita-Kurosawa's interionic interaction parameter and Sun's average single bond strength. FT-IR measurements confirm an increase in bridging oxygen bonds, as a result of replacement of ZnO by B 2 O 3 , which increase the UV glass transmission window and transmittance. - Graphical abstract: O1s, Yamashita-Kurosawa's parameter and average single bond strength of charge overlapping between electronic shells are used to explain enhanced oxide ion 2p electron density, which increases refractive index of glasses. Highlights: → New borate glass for photonic application is prepared. → The dispersion property of the glass is effectively controlled using small amounts of ZnO. → ZnO is used to probe the glass structure and investigate the role of oxygen on the obtained optical properties of the glasses. → Modern theories are used to explain enhanced unshared oxide ion 2p electron density, which increases ionicity of chemical bonds of the glass.

  11. Title: Using Alignment and 2D Network Simulations to Study Charge Transport Through Doped ZnO Nanowire Thin Film Electrodes

    KAUST Repository

    Phadke, Sujay

    2011-09-30

    Factors affecting charge transport through ZnO nanowire mat films were studied by aligning ZnO nanowires on substrates and coupling experimental measurements with 2D nanowire network simulations. Gallium doped ZnO nanowires were aligned on thermally oxidized silicon wafer by shearing a nanowire dispersion in ethanol. Sheet resistances of nanowire thin films that had current flowing parallel to nanowire alignment direction were compared to thin films that had current flowing perpendicular to nanowire alignment direction. Perpendicular devices showed ∼5 fold greater sheet resistance than parallel devices supporting the hypothesis that aligning nanowires would increase conductivity of ZnO nanowire electrodes. 2-D nanowire network simulations of thin films showed that the device sheet resistance was dominated by inter-wire contact resistance. For a given resistivity of ZnO nanowires, the thin film electrodes would have the lowest possible sheet resistance if the inter-wire contact resistance was one order of magnitude lower than the single nanowire resistance. Simulations suggest that the conductivity of such thin film devices could be further enhanced by using longer nanowires. Solution processed Gallium doped ZnO nanowires are aligned on substrates using an innovative shear coating technique. Nanowire alignment has shown improvement in ZnO nanowire transparent electrode conductivity. 2D network simulations in conjunction with electrical measurements have revealed different regimes of operation of nanowire thin films and provided a guideline for improving electrical performance of nanowire electrodes. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  12. Blue-emitting photoluminescence of rod-like and needle-like ZnO nanostructures formed by hot-water treatment of sol–gel derived coatings

    Energy Technology Data Exchange (ETDEWEB)

    Tan, Wai Kian, E-mail: tanwaikian@cie.ignite.tut.ac.jp [Center for International Education, Toyohashi University of Technology, Aichi, Toyohashi 441-8580 (Japan); Kawamura, Go; Muto, Hiroyuki [Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Aichi, Toyohashi 441-8580 (Japan); Abdul Razak, Khairunisak; Lockman, Zainovia [School of Materials and Mineral Resources, Universiti Sains Malaysia, Engineering Campus, Nibong Tebal, Pulau Pinang 14300 Malaysia (Malaysia); Matsuda, Atsunori, E-mail: matsuda@tut.ee.ac.jp [Center for International Education, Toyohashi University of Technology, Aichi, Toyohashi 441-8580 (Japan); Department of Electrical and Electronic Information Engineering, Toyohashi University of Technology, Aichi, Toyohashi 441-8580 (Japan)

    2015-02-15

    The morphological evolution of the zinc oxide (ZnO) nanostructures generated by hot-water treatment (HWT) of sol–gel derived coatings as a function of temperature from 30 to 90 °C was investigated. With increasing HWT temperature, the ZnO crystals evolved from nanoparticles to rod-like and needle-like nanostructures. High-resolution transmission electron microscope observations of rod-like and needle-like nanostructures generated at 60 and 90 °C indicated single crystal ZnO wurtzite structure was obtained. All the hot-water treated samples exhibited blue emission at approximately 440 nm in room temperature. The intensity of blue emission increased with higher HWT temperatures. The unique photoluminescence emission characteristic remained even after heat-treatment at 400 °C for 1 h. As the emission peak obtained in our work is approximately 440 nm (2.82 eV), the emission peak is corresponding to the electron transition from the interstitial Zn to the top of valence band. This facile formation of blue-emitting ZnO nanostructures at low-temperature can be utilized on substrate with low thermal stability for optoelectronic applications such as light emitting devices and biological fluorescence labeling. - Highlights: • Facile and novel formation of ZnO nanostructures by low temperature hot-water treatment. • No catalyst or inhibitor is used. • Evolution of ZnO nanostructures formation as a function of temperature is reported. • Dominant blue emissions are observed from the as-formed and annealed ZnO films. • Ultraviolet and visible emissions are observed for hot-water treated films.

  13. Size dependent emission stimulation in ZnO nanosheets

    International Nuclear Information System (INIS)

    Torchynska, T.V.; El Filali, B.

    2014-01-01

    Photoluminescence (PL), X ray diffraction (XRD) and Raman scattering have been studied in crystalline ZnO nanosheets (NSs) of different sizes, estimated by scanning electronic microscopy (SEM). ZnO NSs with the size from the range of 60–600 nm were created by the electrochemical (anodization) method and followed thermal annealing at 400 °C for 2 h in ambient air. XRD study confirms the wurtzite structure of ZnO NSs and has revealed that the lattice parameters increase monotonically with decreasing NS sizes. Simultaneously the intensity of a set of Raman peaks increases and Raman peaks shift into the low energy range. The surface phonon has been detected in smallest size ZnO NSs. Two types of PL bands deal with a set of phonon replicas of free excitons and the defect related emission have been detected in ZnO NSs. The intensity enhancement of exciton- and defect-related PL bands with decreasing ZnO NS sizes has been detected. The intensity stimulation of exciton-related PL bands is attributed to the realization of the week confinement and the exciton-light coupling with the formation of polariton in small size ZnO NSs of 67–170 nm. The intensity rising of defect-related PL bands is attributed to the concentration enlargement of surface defects when the surface to volume ration increases at decreasing ZnO NS sizes. Numerical simulations of radiative lifetimes and exciton radiative recombination rates in ZnO NSs for different emission wavelengths have been done using the exciton-light coupling model. Then the experimental and numerically simulated PL results have been compared and discussed. - Highlights: • Optical and structural investigations of the ZnO nanosheets with the sizes 60–600 nm. • The enlargement of interplanar distances in the wurtzite ZnO crystal lattice is detected. • The change of optic phonon energy and surface phonon appearing are reveled. • ZnO emission stimulation at the week confinement and electron-light coupling with the

  14. Carbon dioxide adsorption on a ZnO(101[combining macron]0) substrate studied by infrared reflection absorption spectroscopy.

    Science.gov (United States)

    Buchholz, Maria; Weidler, Peter G; Bebensee, Fabian; Nefedov, Alexei; Wöll, Christof

    2014-01-28

    The adsorption of carbon dioxide on the mixed-terminated ZnO(101[combining macron]0) surface of a bulk single crystal was studied by UHV Infrared Reflection Absorption Spectroscopy (IRRAS). In contrast to metals, the classic surface selection rule for IRRAS does not apply to bulk oxide crystals, and hence vibrational bands can also be observed for s-polarized light. Although this fact substantially complicates data interpretation, a careful analysis allows for a direct determination of the adsorbate geometry. Here, we demonstrate the huge potential of IR-spectroscopy for investigations on oxide single crystal surfaces by considering all three components of the incident polarized light separately. We find that the tridentate (surface) carbonate is aligned along the [0001] direction. A comparison to data reported previously for CO2 adsorbed on the surfaces of ZnO nanoparticles provides important insight into the role of defects in the surface chemistry of powder particles.

  15. Nanostructured porous ZnO film with enhanced photocatalytic activity

    International Nuclear Information System (INIS)

    Wang Lina; Zheng Yingying; Li Xiaoyun; Dong Wenjun; Tang Weihua; Chen Benyong; Li Chaorong; Li Xiao; Zhang Tierui

    2011-01-01

    Well-defined ZnO nanostructured films have been fabricated directly on Zn foil via hydrothermal synthesis. During the fabrication of the ZnO nanostructured films, the Zn foil serves as the Zn source and also the substrate. Porous nanosheet-based, nanotube-based and nanoflower-based ZnO films can all be easily prepared by adjusting the alkali type, reaction time and reaction temperature. The composition, morphology and structure of ZnO films are characterized by X-ray diffraction, scanning electron microscope and high-resolution transmission electron microscope. The porous ZnO nanosheet-based film exhibits enhanced photocatalytic activity in the degradation of Rhodamine B under UV light irradiation. This can be attributed to the high surface area of the ZnO nanosheet and the large percentage of the exposed [001] facet. Moreover, the self-supporting, recyclable and stable ZnO photocatalytic film can be readily recovered and potentially applied for pollution disposal.

  16. Nanoscale formation of new solid-state compounds by topochemical effects: The interfacial reactions ZnO with Al2O3 as a model system

    International Nuclear Information System (INIS)

    Pin, Sonia; Ghigna, Paolo; Spinolo, Giorgio; Quartarone, Eliana; Mustarelli, Piercarlo; D'Acapito, Francesco; Migliori, Andrea; Calestani, Gianluca

    2009-01-01

    The chemical reactivity of thin layers (ca. 10 nm thick) of ZnO deposited onto differently oriented Al 2 O 3 single crystals has been investigated by means of atomic force microscopy inspections and X-ray absorption spectroscopy at the Zn-K edge. The (0001) ZnO -parallel (112-bar0) sapphire interface yields the ZnAl 2 O 4 spinel and a quite stable film morphology. Instead, the (112-bar0) ZnO -parallel (11-bar02) sapphire and (0001) ZnO -parallel (0001) sapphire interfaces give origin to a new compound (or, possibly, even two new compounds), whose chemical nature is most likely that of a ZnO/Al 2 O 3 phase, with still unknown composition and crystal structure. In addition, in the last two cases, films collapse into prismatic twins of ca. 1 μm in dimension. These experimental findings demonstrate that in a solid-state reaction, the topotactical relationships between the reacting solids are of crucial importance not only in determining the kinetic and mechanisms of the process in its early stages, but even the chemical nature of the product. - Graphical abstract: EXAFS Fourier transforms and morphology of different reactive interfaces between ZnO and Al 2 O 3 .

  17. Effect of Zn(NO3)2 concentration in hydrothermal-electrochemical deposition on morphology and photoelectrochemical properties of ZnO nanorods

    Science.gov (United States)

    Yilmaz, Ceren; Unal, Ugur

    2016-04-01

    Zn(NO3)2 concentration had been reported to be significantly influential on electrodeposition of ZnO structures. In this work, this issue is revisited using hydrothermal-electrochemical deposition (HED). Seedless, cathodic electrochemical deposition of ZnO films is carried out on ITO electrode at 130 °C in a closed glass reactor with varying Zn(NO3)2 concentration. Regardless of the concentration of Zn2+ precursor (0.001-0.1 M) in the deposition solution, vertically aligned 1-D ZnO nanorods are obtained as opposed to electrodepositions at lower temperatures (70-80 °C). We also report the effects of high bath temperature and pressure on the photoelectrochemical properties of the ZnO films. Manipulation of precursor concentration in the deposition solution allows adjustment of the aspect ratio of the nanorods and the degree of texturation along the c-axis; hence photoinduced current density. HED is shown to provide a single step synthesis route to prepare ZnO rods with desired aspect ratio specific for the desired application just by controlling the precursor concentration.

  18. Photoelectrocatrocatalytic hydrolysis of starch by using sprayed ZnO thin films

    Science.gov (United States)

    Sapkal, R. T.; Shinde, S. S.; Rajpure, K. Y.; Bhosale, C. H.

    2013-05-01

    Thin films of zinc oxide have been deposited onto glass/FTO substrates at optimized 400 °C by using a chemical spray pyrolysis technique. Deposited films are character photocatalytic activity by using XRD, an SEM, a UV-vis spectrophotometer, and a PEC single-cell reactor. Films are polycrystalline and have a hexagonal (wurtzite) crystal structure with c-axis (002) orientation growth perpendicular to the substrate surface. The observed direct band gap is about 3.22 eV for typical films prepared at 400 °C. The photocatalytic activity of starch with a ZnO photocatalyst has been studied by using a novel photoelectrocatalytic process.

  19. Amorphous clusters in Co implanted ZnO induced by boron pre-implantation

    Energy Technology Data Exchange (ETDEWEB)

    Potzger, K.; Shalimov, A.; Zhou, S.; Schmidt, H.; Mucklich, A.; Helm, M.; Fassbender, J.; Liberati, M.; Arenholz, E.

    2009-02-09

    We demonstrate the formation of superparamagnetic/ferromagnetic regions within ZnO(0001) single crystals sequently implanted with B and Co. While the pre-implantation with B plays a minor role for the electrical transport properties, its presence leads to the formation of amorphous phases. Moreover, B acts strongly reducing on the implanted Co. Thus, the origin of the ferromagnetic ordering in local clusters with large Co concentration is itinerant d-electrons as in the case of metallic Co. The metallic amorphous phases are non-detectable by common X-ray diffraction.

  20. Projected future wave climate in the NW Mediterranean Sea

    Science.gov (United States)

    Casas-Prat, M.; Sierra, J. P.

    2013-07-01

    Projected future regional wave climate scenarios at a high temporal-spatial scale were obtained for the NW Mediterranean Sea, using five combinations of regional-global circulation models. Changes in wave variables were analyzed and related to the variations of the forcing wind projections, while also evaluating the evolution of the presence of the different types of sea states. To assess the significance of the changes produced, a bootstrap-based method was proposed, which accounts for the autocorrelation of data and correctly reproduces the extremes. For the mean climate, relative changes of Hs up to ±10% were obtained, whereas they were around ±20% for the extreme climate. In mean terms, variations of Hs are similar to those associated with wind speed but are enhanced/attenuated, respectively, when fetch conditions are favorable/unfavorable. In general, most notable alterations are not in the Hs magnitude but rather in its direction. In this regard, during the winter season, it is interesting to note that the significant deviations between the results derived from the two global circulation models are larger than those between regional models. ECHAM5 simulated an enhanced west wind flow that is translated into more frequent W-NW waves, whereas the HadCM3Q3 global model gives rise to the east component, which contributes to a higher intensity and number of storms coming from such a direction and directly affects the wind-sea/swell distribution of coastal stretches that face east, like the Catalan coast. Different patterns of change were obtained during the summer when a common rise of NE-E waves was found.

  1. Hierarchical structures of ZnO spherical particles synthesized solvothermally

    Science.gov (United States)

    Saito, Noriko; Haneda, Hajime

    2011-12-01

    We review the solvothermal synthesis, using a mixture of ethylene glycol (EG) and water as the solvent, of zinc oxide (ZnO) particles having spherical and flower-like shapes and hierarchical nanostructures. The preparation conditions of the ZnO particles and the microscopic characterization of the morphology are summarized. We found the following three effects of the ratio of EG to water on the formation of hierarchical structures: (i) EG restricts the growth of ZnO microcrystals, (ii) EG promotes the self-assembly of small crystallites into spheroidal particles and (iii) the high water content of EG results in hollow spheres.

  2. Resistive Switching Characteristics in Electrochemically Synthesized ZnO Films

    Directory of Open Access Journals (Sweden)

    Shuhan Jing

    2015-04-01

    Full Text Available The semiconductor industry has long been seeking a new kind of non-volatile memory technology with high-density, high-speed, and low-power consumption. This study demonstrated the electrochemical synthesis of ZnO films without adding any soft or hard templates. The effect of deposition temperatures on crystal structure, surface morphology and resistive switching characteristics were investigated. Our findings reveal that the crystallinity, surface morphology and resistive switching characteristics of ZnO thin films can be well tuned by controlling deposition temperature. A conducting filament based model is proposed to explain the switching mechanism in ZnO thin films.

  3. Oriented ZnO nanostructures and their application in photocatalysis

    Energy Technology Data Exchange (ETDEWEB)

    Man, Minh Tan [Department of Physics, Research Institute of Physics and Chemistry, Chonbuk National University, Jeonju 54896 (Korea, Republic of); Kim, Ji-Hee [Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419 (Korea, Republic of); Sungkyunkwan University (SKKU), Suwon, 16419 (Korea, Republic of); Jeong, Mun Seok [Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS), Suwon 16419 (Korea, Republic of); Department of Energy Science, Sungkyunkwan University, Suwon, 16419 (Korea, Republic of); Do, Anh-Thu Thi [Institute of Materials Science, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet, Caugiay, Hanoi (Viet Nam); Lee, Hong Seok, E-mail: hslee1@jbnu.ac.kr [Department of Physics, Research Institute of Physics and Chemistry, Chonbuk National University, Jeonju 54896 (Korea, Republic of)

    2017-05-15

    We report a chemical bath deposition approach for the preparation of large arrays of oriented ZnO nanostructures by activated substrate processes, and precipitated ZnO nanorods by passive occupation of the crystal surface. Photoluminescence dynamics showed that various visible emission characteristics associated with defects such as oxygen vacancy, zinc interstitial or their complexes. In addition, the precipitated ZnO nanorods exhibited excellent performance in the adsorption and photocatalytic decomposition of organic dyes, achieving 95% photodegradation of Rhodamine 6B. Moreover, oxygen defects function as trap sites with strong adsorption abilities towards organic dyes and showed high performance in the photocatalytic degradation of the dye molecules.

  4. ZnO film deposition on Al film and effects of deposition temperature on ZnO film growth characteristics

    International Nuclear Information System (INIS)

    Yoon, Giwan; Yim, Munhyuk; Kim, Donghyun; Linh, Mai; Chai, Dongkyu

    2004-01-01

    The effects of the deposition temperature on the growth characteristics of the ZnO films were studied for film bulk acoustic wave resonator (FBAR) device applications. All films were deposited using a radio frequency magnetron sputtering technique. It was found that the growth characteristics of ZnO films have a strong dependence on the deposition temperature from 25 to 350 deg. C. ZnO films deposited below 200 deg. C exhibited reasonably good columnar grain structures with highly preferred c-axis orientation while those above 200 deg. C showed very poor columnar grain structures with mixed-axis orientation. This study seems very useful for future FBAR device applications

  5. Lasing in ZnO and CdS nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Thielmann, Andreas; Geburt, Sebastian; Kozlik, Michael; Kuehnel, Julian; Borschel, Christian; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany)

    2011-07-01

    The development of nanoscaled semiconductor lasers could be the key resolution to the still persistent size mismatch between integrated microelectronic devices and semiconductor optoelectronic devices. Semiconductor nanowires offer an elegant path to the development of nanoscaled lasers as their geometry with two planar end facets naturally combines a fiber-like waveguide with an optical resonator. The possible stimulation of the material's emission processes enables lasing of resonant optical modes. ZnO and CdS nanowires of different aspect ratios have been synthesized via the VLS mechanism and were characterized by SEM, EDX and ensemble PL measurements. Power dependent PL measurements on single nanowires excited with pulsed laser light at 355 nm have been performed between 10 K and room temperature and were set in correlation to the nanowires' respective morphology. Sharp emission lines which show characteristics of Fabry-Perot modes could be observed above a power threshold. The measured power dependencies reveal amplified stimulated emission and lasing at high excitation densities.

  6. Potassium acceptor doping of ZnO crystals

    Directory of Open Access Journals (Sweden)

    Narendra S. Parmar

    2015-05-01

    Full Text Available ZnO bulk single crystals were doped with potassium by diffusion at 950°C. Positron annihilation spectroscopy confirms the filling of zinc vacancies and a different trapping center for positrons. Secondary ion mass spectroscopy measurements show the diffusion of potassium up to 10 μm with concentration ∼1 × 1016 cm−3. IR measurements show a local vibrational mode (LVM at 3226 cm−1, at a temperature of 9 K, in a potassium doped sample that was subsequently hydrogenated. The LVM is attributed to an O–H bond-stretching mode adjacent to a potassium acceptor. When deuterium substitutes for hydrogen, a peak is observed at 2378 cm−1. The O-H peak is much broader than the O-D peak, perhaps due to an unusually low vibrational lifetime. The isotopic frequency ratio is similar to values found in other hydrogen complexes. Potassium doping increases the resistivity up to 3 orders of magnitude at room temperature. The doped sample has a donor level at 0.30 eV.

  7. Potassium acceptor doping of ZnO crystals

    Science.gov (United States)

    Parmar, Narendra S.; Corolewski, Caleb D.; McCluskey, Matthew D.; Lynn, K. G.

    2015-05-01

    ZnO bulk single crystals were doped with potassium by diffusion at 950°C. Positron annihilation spectroscopy confirms the filling of zinc vacancies and a different trapping center for positrons. Secondary ion mass spectroscopy measurements show the diffusion of potassium up to 10 μm with concentration ˜1 × 1016 cm-3. IR measurements show a local vibrational mode (LVM) at 3226 cm-1, at a temperature of 9 K, in a potassium doped sample that was subsequently hydrogenated. The LVM is attributed to an O-H bond-stretching mode adjacent to a potassium acceptor. When deuterium substitutes for hydrogen, a peak is observed at 2378 cm-1. The O-H peak is much broader than the O-D peak, perhaps due to an unusually low vibrational lifetime. The isotopic frequency ratio is similar to values found in other hydrogen complexes. Potassium doping increases the resistivity up to 3 orders of magnitude at room temperature. The doped sample has a donor level at 0.30 eV.

  8. Potassium acceptor doping of ZnO crystals

    Energy Technology Data Exchange (ETDEWEB)

    Parmar, Narendra S., E-mail: nparmar@wsu.edu; Lynn, K. G. [Center for Materials Research, Washington State University, Pullman, Washington 99164-2711 (United States); Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814 (United States); Corolewski, Caleb D.; McCluskey, Matthew D. [Department of Physics and Astronomy, Washington State University, Pullman, Washington 99164-2814 (United States)

    2015-05-15

    ZnO bulk single crystals were doped with potassium by diffusion at 950°C. Positron annihilation spectroscopy confirms the filling of zinc vacancies and a different trapping center for positrons. Secondary ion mass spectroscopy measurements show the diffusion of potassium up to 10 μm with concentration ∼1 × 10{sup 16} cm{sup −3}. IR measurements show a local vibrational mode (LVM) at 3226 cm{sup −1}, at a temperature of 9 K, in a potassium doped sample that was subsequently hydrogenated. The LVM is attributed to an O–H bond-stretching mode adjacent to a potassium acceptor. When deuterium substitutes for hydrogen, a peak is observed at 2378 cm{sup −1}. The O-H peak is much broader than the O-D peak, perhaps due to an unusually low vibrational lifetime. The isotopic frequency ratio is similar to values found in other hydrogen complexes. Potassium doping increases the resistivity up to 3 orders of magnitude at room temperature. The doped sample has a donor level at 0.30 eV.

  9. ZNO and AG-ZNO crystals: synthesis, characterization, and application in heterogeneous photocatalysis

    Directory of Open Access Journals (Sweden)

    Adriana Campano Lucilha

    2016-05-01

    Full Text Available ZnO and Ag-ZnO were synthesized in a simple and efficient manner by thermal decomposition of zinc oxalate and silver/zinc mixed oxalate. The influence of the addition of metallic silver on ZnO particles and the effect of temperature in the thermal treatment were investigated. The samples were characterized by thermogravimetric analysis, Raman, X-ray diffraction, scanning electron microscopy, energy dispersive X-ray spectroscopy, specific surface area (Brunauer-Emmett-Teller and diffuse reflectance spectroscopy. The photocatalytic activity of these materials in the decolorization of direct red 23 diazo dye was studied. The complete conversion into oxides from oxalates at lower temperatures was determinant in the photocatalytic efficiency of both the oxides. The presence of silver in zinc oxide, treated at 400 °C, more than doubled the rate constant of diazo dye decolorization (6.87×10-3 min-1 with respect to ZnO, treated at 600 °C, resulting in 3.07×10-3 min-1 under UV irradiation at 30 °C.

  10. The ichthyoplankton assemblage and the environmental variables off the NW and N Iberian Peninsula coasts, in early spring

    Science.gov (United States)

    Rodriguez, J. M.; Gonzalez-Nuevo, G.; Gonzalez-Pola, C.; Cabal, J.

    2009-05-01

    Ichthyoplankton and mesozooplankton were sampled and fluorescence and physical environmental variables were measured off the NW and N Iberian Peninsula coasts, during April 2005. A total of 51 species of fish larvae, belonging to 26 families, were recorded. Sardina pilchardus, with 43.8% and 58.7% of the total fish egg and larval catches, respectively, dominated the ichthyoplankton assemblage. The study area was divided by a cross-shelf frontal structure into two hydrographic regions that coincided with the Atlantic and Cantabrian geographic regions. Ichthyoplankton abundance was higher in the Cantabrian region while larval diversity was higher in the Atlantic region. This was the main alongshore variability in the structure of the larval fish assemblage. Nevertheless, the stronger variability, related with the presence of a shelf-slope front, was found in the central-eastern Cantabrian region where two major larval fish assemblages, an "outer" and a "coastal", were distinguished. The Atlantic region, where the shelf-slope front was not found, was inhabited by a single larval fish assemblage. Canonical correspondence analysis revealed that, off the NW and N Iberian Peninsula coasts, the horizontal distribution of larval fish species in early spring may be explained by a limited number of environmental variables. Of these, the most important were the physical variables depth and sea surface temperature.

  11. The effect of Ce3+ on structure, morphology and optical properties of flower-like ZnO synthesized using the chemical bath method

    International Nuclear Information System (INIS)

    Koao, L.F.; Dejene, F.B.; Swart, H.C.; Botha, J.R.

    2013-01-01

    Ce 3+ doped ZnO flower-like structures were synthesized by the chemical bath deposition method (CBD). The influence of Ce 3+ as a dopant on the crystallization, surface morphology, optical and luminescent properties of ZnO flowers-like structures were investigated. The X-ray diffraction (XRD) spectra of the ZnO:Ce 3+ nanostructures correspond to the various planes of a single hexagonal ZnO phase for the lower Ce concentration samples. The estimated grain sizes calculated using the XRD spectra were found to be in order of 42±2 nm. The grain size was found to be not dependent on the concentration of the Ce 3+ ions used up to 3 mol% of Ce. Scanning Auger electron microscopy and scanning electron micrographs indicate that the addition of Ce 3+ influence the morphology of the samples. The flower-like structures obtained for the undoped and low concentration Ce doped ZnO changed into a mixed structure with the emergence of pyramid shapes for higher concentration Ce doped samples. The solid undoped and low concentration Ce doped powder showed good optical properties with a high reflectance in the visible regions. The properties, however, diminished at higher Ce concentration. The band gap energies decreased linearly with concentration from 3.0±0.1 to 2.4±0.3 eV for ZnO:0 mol% Ce 3+ up to ZnO:10 mol% Ce 3+ . Under 248 nm excitation, the undoped and low concentration Ce doped ZnO flower-like rods exhibited a green emission, peaking at about 559 nm. The higher Ce concentration (0.3 mol% and above) was emitted at 436 and 503 nm due to the Ce transitions. The intensity of these emission spectra of the ZnO:Ce 3+ decreased with the addition of more Ce 3+ ions. -- Highlights: • Ce 3+ doped ZnO flower-like structures were synthesized by CBD. • Flower-like hexagonal ZnO:Ce 3+ nanostructures were obtained for undoped and low mol% Ce. • ZnO changed into a mixed structure with emergence of pyramid shapes for higher mol% Ce. • Good optical properties with a high reflectance

  12. The effect of Ce{sup 3+} on structure, morphology and optical properties of flower-like ZnO synthesized using the chemical bath method

    Energy Technology Data Exchange (ETDEWEB)

    Koao, L.F. [Department of Physics, University of the Free State, Qwaqwa Campus, Private Bag X13, Phuthaditjhaba 9866 (South Africa); Dejene, F.B., E-mail: dejenebf@qwa.ufs.ac.za [Department of Physics, University of the Free State, Qwaqwa Campus, Private Bag X13, Phuthaditjhaba 9866 (South Africa); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein 9300 (South Africa); Botha, J.R. [Physics Department, P.O. Box 77000, Nelson Mandela Metropolitan University, Port Elizabeth 6031 (South Africa)

    2013-11-15

    Ce{sup 3+} doped ZnO flower-like structures were synthesized by the chemical bath deposition method (CBD). The influence of Ce{sup 3+} as a dopant on the crystallization, surface morphology, optical and luminescent properties of ZnO flowers-like structures were investigated. The X-ray diffraction (XRD) spectra of the ZnO:Ce{sup 3+}nanostructures correspond to the various planes of a single hexagonal ZnO phase for the lower Ce concentration samples. The estimated grain sizes calculated using the XRD spectra were found to be in order of 42±2 nm. The grain size was found to be not dependent on the concentration of the Ce{sup 3+} ions used up to 3 mol% of Ce. Scanning Auger electron microscopy and scanning electron micrographs indicate that the addition of Ce{sup 3+} influence the morphology of the samples. The flower-like structures obtained for the undoped and low concentration Ce doped ZnO changed into a mixed structure with the emergence of pyramid shapes for higher concentration Ce doped samples. The solid undoped and low concentration Ce doped powder showed good optical properties with a high reflectance in the visible regions. The properties, however, diminished at higher Ce concentration. The band gap energies decreased linearly with concentration from 3.0±0.1 to 2.4±0.3 eV for ZnO:0 mol% Ce{sup 3+} up to ZnO:10 mol% Ce{sup 3+}. Under 248 nm excitation, the undoped and low concentration Ce doped ZnO flower-like rods exhibited a green emission, peaking at about 559 nm. The higher Ce concentration (0.3 mol% and above) was emitted at 436 and 503 nm due to the Ce transitions. The intensity of these emission spectra of the ZnO:Ce{sup 3+} decreased with the addition of more Ce{sup 3+} ions. -- Highlights: • Ce{sup 3+} doped ZnO flower-like structures were synthesized by CBD. • Flower-like hexagonal ZnO:Ce{sup 3+}nanostructures were obtained for undoped and low mol% Ce. • ZnO changed into a mixed structure with emergence of pyramid shapes for higher mol% Ce

  13. Tracking Ultrafast Carrier Dynamics in Single Semiconductor Nanowire Heterostructures

    Directory of Open Access Journals (Sweden)

    Taylor A.J.

    2013-03-01

    Full Text Available An understanding of non-equilibrium carrier dynamics in silicon (Si nanowires (NWs and NW heterostructures is very important due to their many nanophotonic and nanoelectronics applications. Here, we describe the first measurements of ultrafast carrier dynamics and diffusion in single heterostructured Si nanowires, obtained using ultrafast optical microscopy. By isolating individual nanowires, we avoid complications resulting from the broad size and alignment distribution in nanowire ensembles, allowing us to directly probe ultrafast carrier dynamics in these quasi-one-dimensional systems. Spatially-resolved pump-probe spectroscopy demonstrates the influence of surface-mediated mechanisms on carrier dynamics in a single NW, while polarization-resolved femtosecond pump-probe spectroscopy reveals a clear anisotropy in carrier lifetimes measured parallel and perpendicular to the NW axis, due to density-dependent Auger recombination. Furthermore, separating the pump and probe spots along the NW axis enabled us to track space and time dependent carrier diffusion in radial and axial NW heterostructures. These results enable us to reveal the influence of radial and axial interfaces on carrier dynamics and charge transport in these quasi-one-dimensional nanosystems, which can then be used to tailor carrier relaxation in a single nanowire heterostructure for a given application.

  14. ZnO 1-D nanostructures: Low temperature synthesis and ...

    Indian Academy of Sciences (India)

    Wintec

    high-resolution transmission electron microscope (HRTEM;. JEOL 2010). ... low magnification image of the ZnO nanorod arrays show- ing uniformity of the .... in inverted nail like shape. .... where E (local) is the local electric field at the emitting.

  15. Hydrothermal growth of ZnO nanoflowers and their photocatalyst ...

    Indian Academy of Sciences (India)

    ray diffraction, Raman spectroscopy, scanning electron microscopy, transmission electron microscopy, energy-dispersive X-ray spectroscopy and photoluminescence. ZnO nanoflowers with star-like morphology were of pure wurtzite phase.

  16. Hydrodynamic fabrication of structurally gradient ZnO nanorods.

    Science.gov (United States)

    Kim, Hyung Min; Youn, Jae Ryoun; Song, Young Seok

    2016-02-26

    We studied a new approach where structurally gradient nanostructures were fabricated by means of hydrodynamics. Zinc oxide (ZnO) nanorods were synthesized in a drag-driven rotational flow in a controlled manner. The structural characteristics of nanorods such as orientation and diameter were determined by momentum and mass transfer at the substrate surface. The nucleation of ZnO was induced by shear stress which plays a key role in determining the orientation of ZnO nanorods. The nucleation and growth of such nanostructures were modeled theoretically and analyzed numerically to understand the underlying physics of the fabrication of nanostructures controlled by hydrodynamics. The findings demonstrated that the precise control of momentum and mass transfer enabled the formation of ZnO nanorods with a structural gradient in diameter and orientation.

  17. Optoelectronic properties of doped hydrothermal ZnO thin films

    KAUST Repository

    Mughal, Asad J.; Carberry, Benjamin; Oh, Sang Ho; Myzaferi, Anisa; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

    2017-01-01

    , or In were evaluated for their optoelectronic properties. Inductively coupled plasma atomic emission spectroscopy was used to determine the concentration of dopants within the ZnO films. While Al and Ga-doped films showed linear incorporation rates

  18. Reducing ZnO nanoparticle cytotoxicity by surface modification.

    Science.gov (United States)

    Luo, Mingdeng; Shen, Cenchao; Feltis, Bryce N; Martin, Lisandra L; Hughes, Anthony E; Wright, Paul F A; Turney, Terence W

    2014-06-07

    Nanoparticulate zinc oxide (ZnO) is one of the most widely used engineered nanomaterials and its toxicology has gained considerable recent attention. A key aspect for controlling biological interactions at the nanoscale is understanding the relevant nanoparticle surface chemistry. In this study, we have determined the disposition of ZnO nanoparticles within human immune cells by measurement of total Zn, as well as the proportions of extra- and intracellular dissolved Zn as a function of dose and surface coating. From this mass balance, the intracellular soluble Zn levels showed little difference in regard to dose above a certain minimal level or to different surface coatings. PEGylation of ZnO NPs reduced their cytotoxicity as a result of decreased cellular uptake arising from a minimal protein corona. We conclude that the key role of the surface properties of ZnO NPs in controlling cytotoxicity is to regulate cellular nanoparticle uptake rather than altering either intracellular or extracellular Zn dissolution.

  19. Enhanced antimicrobial activity in biosynthesized ZnO nanoparticles

    Science.gov (United States)

    Kumari, Niraj; Kumari, Priti; Jha, Anal K.; Prasad, K.

    2018-05-01

    Biological synthesis of different metallic and/or oxide nanoparticles and their applications especially in agriculture and biomedical sciences are gaining prominence nowadays due to their handy and reproducible synthetic protocols which are cost-effective and eco-friendly. In this work, green synthesis of zinc oxide nanoparticles (ZnO NPs) using the alcoholic extract of Azadirachta indica as a reducing and stabilizing agent has been presented. Formation of ZnO NPs was confirmed by X-ray diffraction, scanning and transmission electron microscopy techniques. The phytochemicals responsible for nano-transformation were principally alkaloids, flavanoids, terpenoids, tannins and organic acids present in the Azadirachta indica leaves. The synthesized ZnO NPs were used for antimicrobial assays by disc diffusion method against Staphylococcus aureus and Candida albicans. Results showed that ZnO NPs may act as antimicrobial agent especially against skin infections.

  20. Investigation of the pulsed electrochemical deposition of ZnO

    International Nuclear Information System (INIS)

    Dunkel, Christian; Lüttich, Franziska; Graaf, Harald; Oekermann, Torsten; Wark, Michael

    2012-01-01

    The influence of pulse parameters on the morphology of ZnO prepared by pulsed cathodic electrodeposition from oxygen-saturated aqueous ZnCl 2 solution on ITO (indium tin oxide)/glass substrates was investigated. It was found that the ratio between the pulse and the pause duration has a crucial influence on the crystal growth, reaching the highest density of the films with pause/pulse-ratios between 0.25 and 1. Longer pauses cause an Ostwald-like ripening of the ZnO crystals and therewith a strong change in the crystal morphology from roundly shaped to hexagonal. Also the hydrophilicity of the substrate resulting from pre-treatment has a crucial influence on the deposited films, leading to films only consisting of few large and separately grown ZnO crystals for highly hydrophilic substrates and an increasing fraction of small densely grown ZnO crystals with increasing hydrophobicity.

  1. Biogenic ZnO nanoparticles synthesized using L. aculeata leaf ...

    Indian Academy of Sciences (India)

    The antifungal activity of ZnO nanoparticles were determined using the well diffusion method. All the ... 1. Introduction. Nanoparticles have gained increasing importance because ... The synthesis of nanoparticles by conventional physical.

  2. Sonochemical effects on ZnO particles

    Directory of Open Access Journals (Sweden)

    Bruna C. Costa

    2014-01-01

    Full Text Available La variedad de aplicaciones tecnológicas relacionadas a los dispositivos basados en óxidos semiconductores nanoestructurados ha despertado un gran interés en la comunidad científica, haciendo con que los estudios relacionados a estos materiales han aumentado en los últimos años. Entre estos materiales, se encuentra el óxido de zinc (ZnO, que presenta aplicaciones en las más diversas áreas, desde diodos emisores de luz (LEDs a los dispositivos fotovoltaicos en células solares. Con el conocimiento de que las propiedades químicas y físicas que confieren a estos materiales las posibilidades de aplicación en dispositivos tecnológicos son fuertemente dependientes de las rutas de síntesis empleadas para la obtención de los mismos, presentamos en este trabajo una investigación con respecto de las modificaciones morfológicas ocurridas en partículas de ZnO, cuando el mismo es expuesto a un tratamiento sonoquímico, además de las influencias de los parámetros relacionados a éste método de síntesis en la obtención de este material. Para analizar los parámetros presentados anteriormente, tres muestras fueron preparadas, dos de ellas manteniendo la amplitud y variando el tiempo de sonicación y otra manteniendo el tiempo y variando la amplitud de sonicación, durante el tratamiento sonoquímico. El análisis de los resultados obtenidos indica que el tratamiento sonoquímico conduce a modificaciones morfológicas superficiales en las partículas de ZnO, además estas modificaciones se presentaron más evidentes cuando una mayor amplitud y un mayor tiempo de sonicación fueron utilizados en la síntesis de las muestras.

  3. Photocatalytic Water Oxidation on ZnO: A Review

    Directory of Open Access Journals (Sweden)

    Sharifah Bee Abdul Hamid

    2017-03-01

    Full Text Available The investigation of the water oxidation mechanism on photocatalytic semiconductor surfaces has gained much attention for its potential to unlock the technological limitations of producing H2 from carbon-free sources, i.e., H2O. This review seeks to highlight the available scientific and fundamental understanding towards the water oxidation mechanism on ZnO surfaces, as well as present a summary on the modification strategies carried out to increase the photocatalytic response of ZnO.

  4. Synthesis and properties of the diluted magnetic semiconductor ZnO doped with nickel ions by combustion reaction; Sintese e propriedades do semicondutor magnetico diluido ZnO dopado com ions de niquel por meio da reacao de combustao

    Energy Technology Data Exchange (ETDEWEB)

    Morais, A.; Torquato, R.A.; Costa, A.C.F.M, E-mail: m.artur@hotmail.com.br [Universidade Federal da Paraiba (UFPB), Joao Pessoa, PB (Brazil). Departamento de Engenharia de Materiais; Universidade Federal de Campina Grande (UFCG), PB (Brazil). Departamento de Engenharia de Materiais

    2017-10-01

    One of the greatest challenges for the development of the spintronics this creation of materials having semiconductivity and magnetism at above room temperatures, enabling the creation of devices with greater processing speeds. This work aims to synthesize by combustion reaction semiconductor ZnO doped with nickel ions at a concentration of 0.08 mol for applications such as diluted magnetic semiconductor (DMS). The combustion reaction is quite simple and promising in obtaining single-phase materials at the nanoscale. The obtained powder was subjected to the characterizations of X-ray diffraction (XRD), X-ray fluorescence, vibrating sample magnetometry (VSM), and UV-vis spectroscopy. The crystalline material exhibits ZnO crystalline structure and coercive field of 161,36 Oe, showing that the material exhibits the properties of an SMD. (author)

  5. ZnO based potentiometric and amperometric nanosensors.

    Science.gov (United States)

    Willander, Magnus; Khun, Kimleang; Ibupoto, Zafar Hussain

    2014-09-01

    The existence of nanomaterials provides the solid platform for sensing applications due to owing of high sensitivity and a low concentration limit of detection. More likely used nanomaterials for sensing applications includes gold nanoparticles, carbon nanotubes, magnetic nanoparticles such as Fe3O4, quantum dots and metal oxides etc. Recently nanomaterial and biological detection becomes an interdisciplinary field and is very much focussed by the researchers. Among metal oxides ZnO is largely considered due to its less toxic nature, biocompatible, cheap and easy to synthesis. ZnO nanomaterial is highly used for the chemical sensing, especially electrochemical sensing due to its fascinating properties such as high surface to volume ratio, atoxic, biosafe and biocompatible. Moreover, ZnO nanostructures exhibit unique features which could expose a suitable nanoenviroment for the immobilization of proteineous material such as enzymes, DNA, antibodies, etc. and in doing so it retains the biological efficiency of the immobilized bio sensitive material. The following review describes the two different coatings (i.e., ionophore and enzyme) on the surface of ZnO nanorods for the chemical sensing of zinc ion detection, thallium (I) ion detection, and L-lactic acid and the measurement of galactose molecules. ZnO nanorods provide the excellent transducing properties in the generation of strong electrical signals. Moreover, this review is very much focused on the applications of ZnO nanostructures in the sensing field.

  6. Synthesis, characteristics and antimicrobial activity of ZnO nanoparticles

    Science.gov (United States)

    Janaki, A. Chinnammal; Sailatha, E.; Gunasekaran, S.

    2015-06-01

    The utilization of various plant resources for the bio synthesis of metallic nano particles is called green technology and it does not utilize any harmful protocols. Present study focuses on the green synthesis of ZnO nano particles by Zinc Carbonate and utilizing the bio-components of powder extract of dry ginger rhizome (Zingiber officinale). The ZnO nano crystallites of average size range of 23-26 nm have been synthesized by rapid, simple and eco friendly method. Zinc oxide nano particles were characterized by using X-ray diffraction (XRD), Scanning Electron Microscope (SEM), Energy Dispersive X-ray spectroscopy (EDX). FTIR spectra confirmed the adsorption of surfactant molecules at the surface of ZnO nanoparticles and the presence of ZnO bonding. Antimicrobial activity of ZnO nano particles was done by well diffusion method against pathogenic organisms like Klebsiella pneumonia, Staphylococcus aureus and Candida albicans and Penicillium notatum. It is observed that the ZnO synthesized in the process has the efficient antimicrobial activity.

  7. ZnO Nanostructures for Tissue Engineering Applications

    Directory of Open Access Journals (Sweden)

    Marco Laurenti

    2017-11-01

    Full Text Available This review focuses on the most recent applications of zinc oxide (ZnO nanostructures for tissue engineering. ZnO is one of the most investigated metal oxides, thanks to its multifunctional properties coupled with the ease of preparing various morphologies, such as nanowires, nanorods, and nanoparticles. Most ZnO applications are based on its semiconducting, catalytic and piezoelectric properties. However, several works have highlighted that ZnO nanostructures may successfully promote the growth, proliferation and differentiation of several cell lines, in combination with the rise of promising antibacterial activities. In particular, osteogenesis and angiogenesis have been effectively demonstrated in numerous cases. Such peculiarities have been observed both for pure nanostructured ZnO scaffolds as well as for three-dimensional ZnO-based hybrid composite scaffolds, fabricated by additive manufacturing technologies. Therefore, all these findings suggest that ZnO nanostructures represent a powerful tool in promoting the acceleration of diverse biological processes, finally leading to the formation of new living tissue useful for organ repair.

  8. Aqueous chemical growth and application of ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Postels, Bianca; Kasprzak, Anna; Mofor, Augustine C.; Wehmann, Hergo-Heinrich; Bakin, Andrey; Waag, Andreas [Institute of Semiconductor Technology, Technical University Braunschweig, Hans-Sommer-Str. 66, 38106 Braunschweig (Germany)

    2007-07-01

    A very promising fabrication process for ZnO nanostructures is the aqueous chemical growth (ACG), since it is a cost efficient and low temperature approach. Using this growth technique we generated wafer-scale ZnO nanorod arrays on Si, sapphire, ITO coated glass and even on flexible polymer substrates. ACG is found to be only weakly influenced by the substrate material and we are also able to control the dimensions of the ZnO nanorods. Another benefit of ACG is the ability to fabricate patterned arrays of ZnO nanorods by a selective growth process on structured metallised surfaces. Results of structural analysis with SEM and XRD are reported. Additionally, optical properties were investigated by PL measurements. First attempts on the preparation of dye sensitised solar cells (DSSCs) are also reported. Here, the traditional sintered TiO{sub 2} nanoparticles are replaced by a densely packed and vertically aligned array of ACG ZnO nanorods. The size and morphology of the ZnO nanorods can be controlled. The influence of the length of the nanorods on the cell properties is investigated. A vapour phase transport technique was also used as alternative growth method.

  9. High efficient ZnO nanowalnuts photocatalyst: A case study

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Feng [College of Chemistry and Chemical Engineering, Mudanjiang Normal University, Mudanjiang 157011 (China); College of Chemistry and Chemical Engineering, Harbin Normal University, Harbin 150025 (China); Zhang, Siwen; Liu, Yang [College of Chemistry and Chemical Engineering, Harbin Normal University, Harbin 150025 (China); Liu, Hongfeng [School of Basic Medical Sciences, Mudanjiang Medical University, Mudanjiang 157011 (China); Qu, Fengyu [College of Chemistry and Chemical Engineering, Harbin Normal University, Harbin 150025 (China); Cai, Xue, E-mail: xuecai@mail.sdu.edu.cn [College of Chemistry and Chemical Engineering, Mudanjiang Normal University, Mudanjiang 157011 (China); Wu, Xiang, E-mail: wuxiang@hrbnu.edu.cn [College of Chemistry and Chemical Engineering, Harbin Normal University, Harbin 150025 (China)

    2014-11-15

    Highlights: • Walnut-like ZnO nanostructures are synthesized through a facile hydrothermal method. • Morphologies and microstructures of the as-obtained ZnO products were investigated. • The photocatalytic results demonstrate that methyl orange (MO) aqueous solution can be degraded over 97% after 45 min under UV light irradiation. - Abstract: Walnut-like ZnO nanostructures are successfully synthesized through a facile hydrothermal method. The structure and morphology of the as-synthesized products were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The photocatalytic properties of ZnO nanowalnuts are investigated by photodegradating several organic dyes, such as Congo red (CR), methyl orange (MO) and eosin red aqueous solutions under UV irradiation, respectively. The results demonstrate that methyl orange (MO) aqueous solution can be degraded over 97% after 45 min under UV light irradiation. In addition, eosin red and Congo red (CR) aqueous solution degradation experiments are also conducted in the same condition, respectively. It showed that ZnO nanowalnuts represent high photocatalytic activities with a degradation efficiency of 87% for CR with 115 min of irradiation and 97% for eosin red with 55 min of irradiation. The reported ZnO products may be promising candidates as the photocatalysts in waste water treatment.

  10. High efficient ZnO nanowalnuts photocatalyst: A case study

    International Nuclear Information System (INIS)

    Yan, Feng; Zhang, Siwen; Liu, Yang; Liu, Hongfeng; Qu, Fengyu; Cai, Xue; Wu, Xiang

    2014-01-01

    Highlights: • Walnut-like ZnO nanostructures are synthesized through a facile hydrothermal method. • Morphologies and microstructures of the as-obtained ZnO products were investigated. • The photocatalytic results demonstrate that methyl orange (MO) aqueous solution can be degraded over 97% after 45 min under UV light irradiation. - Abstract: Walnut-like ZnO nanostructures are successfully synthesized through a facile hydrothermal method. The structure and morphology of the as-synthesized products were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). The photocatalytic properties of ZnO nanowalnuts are investigated by photodegradating several organic dyes, such as Congo red (CR), methyl orange (MO) and eosin red aqueous solutions under UV irradiation, respectively. The results demonstrate that methyl orange (MO) aqueous solution can be degraded over 97% after 45 min under UV light irradiation. In addition, eosin red and Congo red (CR) aqueous solution degradation experiments are also conducted in the same condition, respectively. It showed that ZnO nanowalnuts represent high photocatalytic activities with a degradation efficiency of 87% for CR with 115 min of irradiation and 97% for eosin red with 55 min of irradiation. The reported ZnO products may be promising candidates as the photocatalysts in waste water treatment

  11. Effect of Mg doping in ZnO buffer layer on ZnO thin film devices for electronic applications

    Science.gov (United States)

    Giri, Pushpa; Chakrabarti, P.

    2016-05-01

    Zinc Oxide (ZnO) thin films have been grown on p-silicon (Si) substrate using magnesium doped ZnO (Mg: ZnO) buffer layer by radio-frequency (RF) sputtering method. In this paper, we have optimized the concentration of Mg (0-5 atomic percent (at. %)) ZnO buffer layer to examine its effect on ZnO thin film based devices for electronic and optoelectronic applications. The crystalline nature, morphology and topography of the surface of the thin film have been characterized. The optical as well as electrical properties of the active ZnO film can be tailored by varying the concentration of Mg in the buffer layer. The crystallite size in the active ZnO thin film was found to increase with the Mg concentration in the buffer layer in the range of 0-3 at. % and subsequently decrease with increasing Mg atom concentration in the ZnO. The same was verified by the surface morphology and topography studies carried out with scanning electron microscope (SEM) and atomic electron microscopy (AFM) respectively. The reflectance in the visible region was measured to be less than 80% and found to decrease with increase in Mg concentration from 0 to 3 at. % in the buffer region. The optical bandgap was initially found to increase from 3.02 eV to 3.74 eV by increasing the Mg content from 0 to 3 at. % but subsequently decreases and drops down to 3.43 eV for a concentration of 5 at. %. The study of an Au:Pd/ZnO Schottky diode reveals that for optimum doping of the buffer layer the device exhibits superior rectifying behavior. The barrier height, ideality factor, rectification ratio, reverse saturation current and series resistance of the Schottky diode were extracted from the measured current voltage (I-V) characteristics.

  12. Microwave synthesis and photocatalytic activities of ZnO bipods with different aspect ratios

    Energy Technology Data Exchange (ETDEWEB)

    Sun, Fazhe; Zhao, Zengdian [Analysis and Testing Center, Shandong University of Technology, Zibo 255100 (China); Qiao, Xueliang, E-mail: xuelqiao@163.com [State Key Laboratory of Plastic Forming Simulation and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, Hubei (China); Tan, Fatang; Wang, Wei [State Key Laboratory of Plastic Forming Simulation and Die and Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, Hubei (China)

    2016-02-15

    Highlights: • We synthesized linked ZnO nanorods by a facile microwave method. • The effect of reaction parameters on ZnO was investigated. • ZnO bipods with different aspect ratios were prepared. • The photocatalytic performance of ZnO bipods was evaluated. - Abstract: Linked ZnO nanorods have been successfully prepared via a facile microwave method without any post-synthesis treatment. The X-ray diffraction (XRD) patterns indicated the precursor had completely transformed into the pure ZnO crystal. The images of field emitting scanning electron microscope (FESEM) and transmission electron microscope (TEM) showed that linked ZnO nanorods consisted predominantly of ZnO bipods. The formation process of the ZnO bipods was clearly discussed. ZnO bipods with different aspect ratios have been obtained by tuning the concentrations of reagents and microwave power. Moreover, the photocatalytic performance of ZnO bipods with different aspect ratios for degradation of methylene blue was systematically evaluated. The results of photocatalytic experiments showed that the photocatalytic activity increased with the aspect ratios of ZnO bipods increased. The reason is that ZnO bipods with larger aspect ratio have higher surface area, which can absorb more MB molecules to react with ·OH radicals.

  13. Physical and chemical contributions of a plasma treatment in the growth of ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Jang, J.T. [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Ryu, H., E-mail: hhryu@inje.ac.kr [Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Obang-dong, Gimhae, Gyeongnam 621-749 (Korea, Republic of); Lee, W.J. [Department of Materials and Components Engineering, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan 614-714 (Korea, Republic of); Yun, J. [Department of Nano Science and Engineering, Kyungnam University, Changwon, Gyeongnam 631-701 (Korea, Republic of)

    2013-11-15

    Highlights: •ZnO nanorods were grown by hydrothermal synthesis. •Oxygen plasma was done on the surface of seed ZnO nanorods. •The ZnO nanorods with and without plasma treatment were characterized. •The results showed that the optical and structural properties of ZnO nanorods with plasma treatment were enhanced. -- Abstract: We analyzed the enhancement of optical and structural properties of ZnO nanorods by using a plasma treatment. In this study, seed ZnO nanorods were grown by hydrothermal synthesis for 1 h on a ZnO buffered Si substrate. The seed ZnO nanorods were then treated with an oxygen plasma. Next, ZnO was grown for an additional 4 h by hydrothermal synthesis. The resultant ZnO nanorods were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), scanning transmission electron microscopy (STEM), electron energy loss spectroscopy (EELS), X-ray diffraction (XRD) and photoluminescence (PL). The measurements showed that the plasma treatment of the seed ZnO nanorods increased the roughness of the buffer layer and the concentration of oxygen ions on the surfaces of the seed ZnO nanorods and the buffer layer, leading to improved optical and structural properties. In this study, we found that the plasma treatment on the seed ZnO nanorods enhanced the optical and structural properties of the ZnO nanorods.

  14. Electrical, dielectric and photocatalytic properties of Fe-doped ZnO nanomaterials synthesized by sol gel method

    Directory of Open Access Journals (Sweden)

    Yacine Cherif

    2016-09-01

    Full Text Available Fe-doped ZnO nanoparticles were synthesized by sol gel technique. Fine-scale and single phase hexagonal wurtzite structure in all samples were confirmed by SEM and XRD, respectively. The band gap energy depends on the amount of Fe and was found to be in the range of 3.11–2.53 eV. The electric and dielectric properties were investigated using complex impedance spectroscopy. AC conductivity data were correlated with the barrier hopping (CBH model to evaluate the binding energy (Wm, the minimum hopping distance (Rmin and the density of states at Fermi level, N(EF. Fe doping in ZnO also improved the photocatalytic activity. Thus, the sample Zn0.95Fe0.05O showed high degradation potential towards methylene blue (MB, i.e. it degrades 90% of BM in 90 min under UV light.

  15. Linear and nonlinear intraband optical properties of ZnO quantum dots embedded in SiO2 matrix

    Directory of Open Access Journals (Sweden)

    Deepti Maikhuri

    2012-03-01

    Full Text Available In this work we investigate some optical properties of semiconductor ZnO spherical quantum dot embedded in an amorphous SiO2 dielectric matrix. Using the framework of effective mass approximation, we have studied intraband S-P, and P-D transitions in a singly charged spherical ZnO quantum dot. The optical properties are investigated in terms of the linear and nonlinear photoabsorption coefficient, the change in refractive index, and the third order nonlinear susceptibility and oscillator strengths. Using the parabolic confinement potential of electron in the dot these parameters are studied with the variation of the dot size, and the energy and intensity of incident radiation. The photoionization cross sections are also obtained for the different dot radii from the initial ground state of the dot. It is found that dot size, confinement potential, and incident radiation intensity affects intraband optical properties of the dot significantly.

  16. Investigation on structural and electrical properties of Fe doped ZnO nanoparticles synthesized by solution combustion method

    International Nuclear Information System (INIS)

    Ram, Mast; Bala, Kanchan; Sharma, Hakikat; Kumar, Arun; Negi, N. S.

    2016-01-01

    In the present study, nanoparticles of Fe doped zinc oxide (ZnO) [Zn_1_-_xFe_xO where x=0.0, 0.01, 0.02, 0.03 and 0.05] were prepared by cost effective solution combustion method. The powder X-ray diffractometry confirms the formation of single phase wurtzite structure. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investigate the micrsostructure of Fe-doped ZnO nanoparticles. The DC electrical conductivity was found to increase with temperature and measurement was carried out in the temperature range of 300-473K. DC electrical conductivity increases with temperature and decreases with Fe doping concentration.

  17. Structural, optical, and LED characteristics of ZnO and Al doped ZnO thin films

    Science.gov (United States)

    Sandeep, K. M.; Bhat, Shreesha; Dharmaprakash, S. M.

    2017-05-01

    ZnO (pristine) and Al doped ZnO (AZO) films were prepared using sol-gel spin coating method. The XRD analysis showed the enhanced compressive stress in AZO film. The presence of extended states below the conduction band edge in AZO accounts for the redshift in optical bandgap. The PL spectra of AZO showed significant blue emission due to the carrier recombination from defect states. The TRPL curves showed the dominant DAP recombination in ZnO film, whereas defect related recombination in Al doped ZnO film. Color parameters viz: the dominant wavelength, color coordinates (x,y), color purity, luminous efficiency and correlated color temperature (CCT) of ZnO and AZO films are calculated using 1931 (CIE) diagram. Further, a strong blue emission with color purity more than 96% is observed in both the films. The enhanced blue emission in AZO significantly increased the luminous efficiency (22.8%) compared to ZnO film (10.8%). The prepared films may be used as blue phosphors in white light generation.

  18. Synthesis of ZnO nanorods and observation of resistive switching memory in ZnO based polymer nanocomposites

    Science.gov (United States)

    Nair, Manjula G.; Malakar, Meenakshi; Mohapatra, Saumya R.; Chowdhury, Avijit

    2018-05-01

    This research reports the observation of bipolar resistive switching memory in ZnO nanorod based polymer nanocomposites. We synthesized ZnO nanorods by wet-chemical method and characterized them using XRD, UV-VIS spectroscopy and SEM. The synthesized materials have hexagonal ZnO phase with grain size of 24 nm and having strong orientation along (101) direction as observed from XRD. The SEM micrograph confirms the formation of ZnO nanorods with diameter in the range of 10 to 20 nm and length of the order of 1 µm. From optical absorption spectra the band gap is estimated to be 2.42 eV. ZnO nanorods were dispersed in PVDF-HFP polymer matrix to prepare the nanocomposite. This nanocomposite was used as active layer in the devices having sandwich structure of ITO/PVDF-HFP+ZnO nanorods/Al. Bipolar non-volatile memory was observed with ON-OFF resistance ratio of the order of 103 and with a wide voltage window of 2.3V. The switching mechanism could be due to the trapping and de-trapping of electrons by the ZnO nanorods in the nanocomposite during ON and OFF states respectively.

  19. CRED REA Algal Assessments at Necker, NW Hawaiian Islands in 2006

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Twelve quadrats were sampled along 2 consecutively-placed, 25m transect lines, as part of Rapid Ecological Assessments, conducted at 2 sites at Necker in the NW...

  20. CRED REA Fish Team Belt Transect Survey at Maro Reef, NW Hawaiian Islands, 2006

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Belt transects along 3 consecutively-placed, 25m transect lines were surveyed as part of Rapid Ecological Assessments conducted at 9 sites at Maro Reef in the NW...

  1. CRED REA Coral Population Parameters at Kure Atoll, NW Hawaiian Islands (NWHI), 2006

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Belt transects along 2 consecutively-placed, 25m transect lines were surveyed as part of Rapid Ecological Assessments conducted at 9 sites at Kure Atoll in the NW...

  2. CRED REA Algal Assessments at Maro Reef, NW Hawaiian Islands in 2006

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Twelve quadrats were sampled along 2 consecutively-placed, 25m transect lines, as part of Rapid Ecological Assessments, conducted at 9 sites at Maro Reef in the NW...

  3. CRED REA Algal Assessments at Laysan, NW Hawaiian Islands in 2006

    Data.gov (United States)

    National Oceanic and Atmospheric Administration, Department of Commerce — Twelve quadrats were sampled along 2 consecutively-placed, 25m transect lines, as part of Rapid Ecological Assessments, conducted at 3 sites at Laysan in the NW...

  4. Strain-Gated Field Effect Transistor of a MoS2-ZnO 2D-1D Hybrid Structure.

    Science.gov (United States)

    Chen, Libo; Xue, Fei; Li, Xiaohui; Huang, Xin; Wang, Longfei; Kou, Jinzong; Wang, Zhong Lin

    2016-01-26

    Two-dimensional (2D) molybdenum disulfide (MoS2) is an exciting material due to its unique electrical, optical, and piezoelectric properties. Owing to an intrinsic band gap of 1.2-1.9 eV, monolayer or a-few-layer MoS2 is used for fabricating field effect transistors (FETs) with high electron mobility and on/off ratio. However, the traditional FETs are controlled by an externally supplied gate voltage, which may not be sensitive enough to directly interface with a mechanical stimulus for applications in electronic skin. Here we report a type of top-pressure/force-gated field effect transistors (PGFETs) based on a hybrid structure of a 2D MoS2 flake and 1D ZnO nanowire (NW) array. Once an external pressure is applied, the piezoelectric polarization charges created at the tips of ZnO NWs grown on MoS2 act as a gate voltage to tune/control the source-drain transport property in MoS2. At a 6.25 MPa applied stimulus on a packaged device, the source-drain current can be tuned for ∼25%, equivalent to the results of applying an extra -5 V back gate voltage. Another type of PGFET with a dielectric layer (Al2O3) sandwiched between MoS2 and ZnO also shows consistent results. A theoretical model is proposed to interpret the received data. This study sets the foundation for applying the 2D material-based FETs in the field of artificial intelligence.

  5. Fabrication of Well-Aligned ZnO Nanorods Using a Composite Seed Layer of ZnO Nanoparticles and Chitosan Polymer.

    Science.gov (United States)

    Khun, Kimleang; Ibupoto, Zafar Hussain; AlSalhi, Mohamad S; Atif, Muhammad; Ansari, Anees A; Willander, Magnus

    2013-09-30

    In this study, by taking the advantage of both inorganic ZnO nanoparticles and the organic material chitosan as a composite seed layer, we have fabricated well-aligned ZnO nanorods on a gold-coated glass substrate using the hydrothermal growth method. The ZnO nanoparticles were characterized by the Raman spectroscopic techniques, which showed the nanocrystalline phase of the ZnO nanoparticles. Different composites of ZnO nanoparticles and chitosan were prepared and used as a seed layer for the fabrication of well-aligned ZnO nanorods. Field emission scanning electron microscopy, energy dispersive X-ray, high-resolution transmission electron microscopy, X-ray diffraction, and infrared reflection absorption spectroscopic techniques were utilized for the structural characterization of the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods on a gold-coated glass substrate. This study has shown that the ZnO nanorods are well-aligned, uniform, and dense, exhibit the wurtzite hexagonal structure, and are perpendicularly oriented to the substrate. Moreover, the ZnO nanorods are only composed of Zn and O atoms. An optical study was also carried out for the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods, and the obtained results have shown that the fabricated ZnO nanorods exhibit good crystal quality. This study has provided a cheap fabrication method for the controlled morphology and good alignment of ZnO nanorods, which is of high demand for enhancing the working performance of optoelectronic devices.

  6. Fabrication of Well-Aligned ZnO Nanorods Using a Composite Seed Layer of ZnO Nanoparticles and Chitosan Polymer

    Directory of Open Access Journals (Sweden)

    Anees A. Ansari

    2013-09-01

    Full Text Available In this study, by taking the advantage of both inorganic ZnO nanoparticles and the organic material chitosan as a composite seed layer, we have fabricated well-aligned ZnO nanorods on a gold-coated glass substrate using the hydrothermal growth method. The ZnO nanoparticles were characterized by the Raman spectroscopic techniques, which showed the nanocrystalline phase of the ZnO nanoparticles. Different composites of ZnO nanoparticles and chitosan were prepared and used as a seed layer for the fabrication of well-aligned ZnO nanorods. Field emission scanning electron microscopy, energy dispersive X-ray, high-resolution transmission electron microscopy, X-ray diffraction, and infrared reflection absorption spectroscopic techniques were utilized for the structural characterization of the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods on a gold-coated glass substrate. This study has shown that the ZnO nanorods are well-aligned, uniform, and dense, exhibit the wurtzite hexagonal structure, and are perpendicularly oriented to the substrate. Moreover, the ZnO nanorods are only composed of Zn and O atoms. An optical study was also carried out for the ZnO nanoparticles/chitosan seed layer-coated ZnO nanorods, and the obtained results have shown that the fabricated ZnO nanorods exhibit good crystal quality. This study has provided a cheap fabrication method for the controlled morphology and good alignment of ZnO nanorods, which is of high demand for enhancing the working performance of optoelectronic devices.

  7. The Cape Ghir filament system in August 2009 (NW Africa)

    Science.gov (United States)

    Sangrà, Pablo; Troupin, Charles; Barreiro-González, Beatriz; Desmond Barton, Eric; Orbi, Abdellatif; Arístegui, Javier

    2015-06-01

    In the framework of the Canaries-Iberian marine ecosystem Exchanges (CAIBEX) experiment, an interdisciplinary high-resolution survey was conducted in the NW African region of Cape Ghir (30°38'N) during August 2009. The anatomy of a major filament is investigated on scales down to the submesoscale using in situ and remotely sensed data. The filament may be viewed as a system composed of three intimately connected structures: a small, shallow, and cold filament embedded within a larger, deeper, and cool filament and an intrathermocline anticyclonic eddy (ITE). The cold filament, which stretches 110 km offshore, is a shallow feature 60 m deep and 25 km wide, identified by minimal surface temperatures and rich in chlorophyll a. This structure comprises two asymmetrical submesoscale (˜18 km) fronts with jets flowing in opposite directions. The cold filament is embedded near the equatorward boundary of a much broader region of approximately 120 km width and 150 m depth that forms the cool filament and stretches at least 200 km offshore. This cool region, partly resulting from the influence of cold filament, is limited by two asymmetrical mesoscale (˜50 km) frontal boundaries. At the ITE, located north of the cold filament, we observe evidence of downwelling as indicated by a relatively high concentration of particles extending from the surface to more than 200 m depth. We hypothesize that this ITE may act as a sink of carbon and thus the filament system may serve dual roles of offshore carbon export and carbon sink.

  8. Assessment of the out-plane and in-plane ordering of high quality ZnO nanorods by X-ray multiple diffraction

    International Nuclear Information System (INIS)

    Martínez-Tomás, M.C.; Montenegro, D.N.; Agouram, S.; Sallet, V.; Muñoz-Sanjosé, V.

    2013-01-01

    ZnO nanorods grown on buffered and non buffered sapphire substrates have been investigated by X-ray multiple diffraction using Renninger scans of the ZnO(0001) and ZnO(0003) forbidden reflections. In this technique the diffracted X-ray beam is simultaneously diffracted by several sets of planes, providing information on the broadening in different directions, as well as from nanorods, and from the layer on which they grow. The intensities and angular widths of peaks obtained by azimuthal and omega scans have been analyzed, making a direct comparison with conventional measurements of the full width at half-maximum of symmetric and asymmetric reflections. The analysis leads to establish that the peaks of the Renninger scan are highly sensitive to structural characteristics, providing information related with both the out-plane and in-plane ordering of nanostructured samples with a single scan. - Highlights: ► Structural characteristics of ZnO nanorods have been analyzed by X-ray multiple diffraction. ► X-ray multiple diffraction can provide mosaic structure characteristics from a single scan. ► Peaks of Renninger scan result to be very sensitive to structural characteristics. ► X-ray multiple diffraction can be an alternative analysis method to X-ray diffraction

  9. Assessment of the out-plane and in-plane ordering of high quality ZnO nanorods by X-ray multiple diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Martínez-Tomás, M.C., E-mail: Carmen.Martinez-tomas@uv.es [Departamento de Física Aplicada y Electromagnetismo, Universitat de Valencia, Dr. Moliner 50, 46100 Burjassot (Spain); Montenegro, D.N.; Agouram, S. [Departamento de Física Aplicada y Electromagnetismo, Universitat de Valencia, Dr. Moliner 50, 46100 Burjassot (Spain); Sallet, V. [Groupe d' Etude de la Matière Condensée (GEMAC), CNRS-Université de Versailles St-Quentin, 45 avenue des Etats-Unis, 78035 Versailles Cedex (France); Muñoz-Sanjosé, V. [Departamento de Física Aplicada y Electromagnetismo, Universitat de Valencia, Dr. Moliner 50, 46100 Burjassot (Spain)

    2013-08-31

    ZnO nanorods grown on buffered and non buffered sapphire substrates have been investigated by X-ray multiple diffraction using Renninger scans of the ZnO(0001) and ZnO(0003) forbidden reflections. In this technique the diffracted X-ray beam is simultaneously diffracted by several sets of planes, providing information on the broadening in different directions, as well as from nanorods, and from the layer on which they grow. The intensities and angular widths of peaks obtained by azimuthal and omega scans have been analyzed, making a direct comparison with conventional measurements of the full width at half-maximum of symmetric and asymmetric reflections. The analysis leads to establish that the peaks of the Renninger scan are highly sensitive to structural characteristics, providing information related with both the out-plane and in-plane ordering of nanostructured samples with a single scan. - Highlights: ► Structural characteristics of ZnO nanorods have been analyzed by X-ray multiple diffraction. ► X-ray multiple diffraction can provide mosaic structure characteristics from a single scan. ► Peaks of Renninger scan result to be very sensitive to structural characteristics. ► X-ray multiple diffraction can be an alternative analysis method to X-ray diffraction.

  10. Synthesis, structural and optical properties of ZnO spindle/reduced graphene oxide composites with enhanced photocatalytic activity under visible light irradiation

    Science.gov (United States)

    Prabhu, S.; Pudukudy, M.; Sohila, S.; Harish, S.; Navaneethan, M.; Navaneethan, D.; Ramesh, R.; Hayakawa, Y.

    2018-05-01

    In the present work, spindle-shaped ZnO and reduced graphene oxide sheets were successfully synthesized by a hydrothermal method and then ZnO/r-GO composite was prepared by a direct solution mixing method. Various characterization results confirmed the interior and surface decoration of spindle-shaped ZnO on the reduced graphene oxide sheets. The phase formation, crystalline structure, morphology, surface states and optical properties were characterized using Powder X-ray diffraction (XRD), Field emission scanning electron microscopy (FESEM), Transmission electron microscopy (TEM), X-ray photoelectron spectroscopy (XPS), Fourier Transform Infrared Spectroscopy (FTIR) and UV-Vis spectroscopy. The X-ray diffraction analysis showed the formation of the hexagonal wurtzite crystalline structure of ZnO with high crystalline quality. The band gap of the ZnO/r-GO composite was found to be low (3.03eV) compared to the band gap of spindle shaped ZnO (3.13 eV), as calculated from optical studies. The spindle-like morphology of the single crystalline ZnO was clearly shown in the electron microscopic images. The chemical bonding and surface states of the samples were studied using XPS measurement. Moreover, a possible growth mechanism for the ZnO spindle was proposed. The catalytic activity of the as-synthesized samples was evaluated for the photodegradation of methylene blue under visible light irradiation. Among the synthesized samples, the ZnO/r-GO composite showed higher degradation efficiency of 93% and successfully reused for four consecutive run without any activity loss.

  11. Facile fabrication of core-shell Pr6O11-ZnO modified silane coatings for anti-corrosion applications

    Science.gov (United States)

    Jeeva Jothi, K.; Palanivelu, K.

    2014-01-01

    In this work, we have developed a facile and inexpensive method to fabricate anti-corrosive and hydrophobic surface with hierarchical micro and nano structures. We demonstrate for the first time the use of praseodymium oxide doped zinc oxide (Pr6O11-ZnO) nanocomposites loaded in a hybrid sol-gel (SiOx/ZrOx) layer, to effectively protect the underlying steel substrate from corrosion attack. The influence of Pr6O11-ZnO gives the surprising aspects based on active anti-corrosion and hydrophobic coatings. The spherical SiO2 particles have been successfully coated with Pr6O11-ZnO layer through sol-gel process. The resulted SiO2@Pr6O11-ZnO core-shell was characterized by Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Fourier Transform Infrared Spectroscopy (FTIR), Scanning Electron Microscopy (SEM), and X-ray Photoelectron Spectroscopy (XPS). The barrier properties of the intact coatings were assessed by Electrochemical Impedance Spectroscopy (EIS). The fabrication of SiO2@Pr6O11-ZnO shows dual properties of hydrophobic and anti-corrosion micro/nanostructured sol-gel coatings follows a single/simple step coating procedure. This study has led to a better understanding factor influencing the anti-corrosion performance with embedded nanocomposites. These developments are particularly for silane network@ Pr6O11-ZnO for self-healing and self-cleaning behavior which can be designed for new protective coating system.

  12. The electronic, magnetic and optical properties of ZnO doped with doubles impurities (Cr, Fe): An LDA-SIC and Monte Carlo study

    Energy Technology Data Exchange (ETDEWEB)

    Salmani, El Mehdi, E-mail: elmehdisalmani@gmail.com [LMPHE, Faculté des Sciences, Université Mohammed V, Rabat (Morocco); Laghrissi, Ayoub; Lamouri, Rachida; Ez-Zahraouy, Hamid [LMPHE, Faculté des Sciences, Université Mohammed V, Rabat (Morocco); Benyoussef, Abdelilah [Institute for Nanomaterials and Nanotechnologies, MAScIR, Rabat (Morocco); Académie Hassan II des Sciences et Techniques, Rabat (Morocco)

    2017-01-15

    Electronic structure, magnetic and optical properties of ZnO doped with single and double impurities Zn{sub 1−x}Cr{sub x}O, Zn{sub 1−x}Fe{sub x}O, and Zn{sub 1−2x}Cr{sub x}Fe{sub x}O (x=0.03 and 0.06) are investigated using first-principles calculations. Based on the Korringa–Kohn–Rostoker method combined with the coherent potential approximation, we investigated the half-metallic ferromagnetic behavior of doubles impurities (Cr, Fe) doped ZnO. To support our results, we apply the self-interaction-corrected local density approximation (SIC-LDA) to study the electronic structure, optical and magnetic properties of Co-doped ZnO with doubles impurities (Cr, Fe) showing that the half-metallic ferromagnetic state still persists. The stability of the ferromagnetic state compared with the spin-glass state is investigated by comparing their total energies. The exchange interactions obtained from first principle calculations and used in a classical Ising model by a Monte Carlo approach resulted in ferromagnetic states with high Neel temperature. - Highlights: • The electronic structure calculations for ZnO doped with doubles impurities (Cr, Fe) have been discussed. • The half-metallic aspect was proven to take place for doubles impurities (Cr, Fe) codoped ZnO. • The doubles impurities (Cr, Fe)impurities are shown to introduce the necessary magnetic moment that makes ZnO good candidates for spintronic applications.

  13. Electrochemical Sensing, Photocatalytic and Biological Activities of ZnO Nanoparticles: Synthesis via Green Chemistry Route

    Science.gov (United States)

    Yadav, L. S. Reddy; Archana, B.; Lingaraju, K.; Kavitha, C.; Suresh, D.; Nagabhushana, H.; Nagaraju, G.

    2016-05-01

    In this paper, we have successfully synthesized ZnO nanoparticles (Nps) via solution combustion method using sugarcane juice as the novel fuel. The structure and morphology of the synthesized ZnO Nps have been analyzed using various analytical tools. The synthesized ZnO Nps exhibit excellent photocatalytic activity for the degradation of methylene blue dye, indicating that the ZnO Nps are potential photocatalytic semiconductor materials. The synthesized ZnO Nps also show good electrochemical sensing of dopamine. ZnO Nps exhibit significant bactericidal activity against Klebsiella aerogenes, Pseudomonas aeruginosa, Eschesichia coli and Staphylococcus aureus using agar well diffusion method. Furthermore, the ZnO Nps show good antioxidant activity by potentially scavenging 1-diphenyl-2-picrylhydrazyl (DPPH) radicals. The above studies clearly demonstrate versatile applications of ZnO synthesized by simple eco-friendly route.

  14. Fabrication and photovoltaic properties of ZnO nanorods/perovskite solar cells

    Energy Technology Data Exchange (ETDEWEB)

    Shirahata, Yasuhiro; Tanaike, Kohei; Akiyama, Tsuyoshi; Fujimoto, Kazuya; Suzuki, Atsushi; Balachandran, Jeyadevan; Oku, Takeo, E-mail: oku@mat.usp.ac.jp [Department of Materials Science, The University of Shiga Prefecture, 2500 Hassaka, Hikone, Shiga 522-8533 (Japan)

    2016-02-01

    ZnO nanorods/perovskite solar cells with different lengths of ZnO nanorods were fabricated. The ZnO nanorods were prepared by chemical bath deposition and directly confirmed to be hexagon-shaped nanorods. The lengths of the ZnO nanorads were controlled by deposition condition of ZnO seed layer. Photovoltaic properties of the ZnO nanorods/CH{sub 3}NH{sub 3}PbI{sub 3} solar cells were investigated by measuring current density-voltage characteristics and incident photon to current conversion efficiency. The highest conversion efficiency was obtained in ZnO nanorods/CH{sub 3}NH{sub 3}PbI{sub 3} with the longest ZnO nanorods.

  15. Easily fabricated and lightweight PPy/PDA/AgNW composites for excellent electromagnetic interference shielding.

    Science.gov (United States)

    Wang, Yan; Gu, Fu-Qiang; Ni, Li-Juan; Liang, Kun; Marcus, Kyle; Liu, Shu-Li; Yang, Fan; Chen, Jin-Ju; Feng, Zhe-Sheng

    2017-11-30

    Conductive polymer composites (CPCs) containing nanoscale conductive fillers have been widely studied for their potential use in various applications. In this paper, polypyrrole (PPy)/polydopamine (PDA)/silver nanowire (AgNW) composites with high electromagnetic interference (EMI) shielding performance, good adhesion ability and light weight are successfully fabricated via a simple in situ polymerization method followed by a mixture process. Benefiting from the intrinsic adhesion properties of PDA, the adhesion ability and mechanical properties of the PPy/PDA/AgNW composites are significantly improved. The incorporation of AgNWs endows the functionalized PPy with tunable electrical conductivity and enhanced EMI shielding effectiveness (SE). By adjusting the AgNW loading degree in the PPy/PDA/AgNW composites from 0 to 50 wt%, the electrical conductivity of the composites greatly increases from 0.01 to 1206.72 S cm -1 , and the EMI SE of the composites changes from 6.5 to 48.4 dB accordingly (8.0-12.0 GHz, X-band). Moreover, due to the extremely low density of PPy, the PPy/PDA/AgNW (20 wt%) composites show a superior light weight of 0.28 g cm -3 . In general, it can be concluded that the PPy/PDA/AgNW composites with tunable electrical conductivity, good adhesion properties and light weight can be used as excellent EMI shielding materials.

  16. A 58 nW ECG ASIC With Motion-Tolerant Heartbeat Timing Extraction for Wearable Cardiovascular Monitoring.

    Science.gov (United States)

    Da He, David; Sodini, Charles G

    2015-06-01

    An ASIC for wearable cardiovascular monitoring is implemented using a topology that takes advantage of the electrocardiogram's (ECG) waveform to replace the traditional ECG instrumentation amplifier, ADC, and signal processor with a single chip solution. The ASIC can extract heartbeat timings in the presence of baseline drift, muscle artifact, and signal clipping. The circuit can operate with ECGs ranging from the chest location to remote locations where the ECG magnitude is as low as 30 μV. Besides heartbeat detection, a midpoint estimation method can accurately extract the ECG R-wave timing, enabling the calculations of heart rate variability. With 58 nW of power consumption at 0.8 V supply voltage and 0.76 mm (2) of active die area in standard 0.18 μm CMOS technology, the ECG ASIC is sufficiently low power and compact to be suitable for long term and wearable cardiovascular monitoring applications under stringent battery and size constraints.

  17. Photoluminescence and lasing properties of ZnO nanorods

    International Nuclear Information System (INIS)

    Lee, Geon Joon; Lee, Young Pak; Min, Sun Ki; Han, Sung Hwan; Lim, Hwan Hong; Cha, Myoung Sik; Kim, Sung Soo; Cheong, Hyeon Sik

    2010-01-01

    In this study, we investigated the structures, photoluminescence (PL), and lasing characteristics of the ZnO nanorods prepared by using chemical bath deposition. The continuous-wave HeCd laser excited PL spectra of the ZnO nanorods exhibited two emission bands, one in the UV region and the other in the visible region. The UV emission band has its peak at 3.25 eV with a bandwidth of 160 meV. However, the PL spectra under 355-nm, 35-ps pulse excitation exhibited a spectrally-narrowed UV emission band with a peak at 3.20 eV and a spectral width of 35 meV. The lasing phenomena were ascribed to the amplified spontaneous emission (ASE) caused by coupling of the microcavity effect of ZnO nanorods and the high-intensity excitation. Above the lasing threshold, the ASE peak intensity exhibited a superlinear dependence on the excitation intensity. For an excitation pulse energy of 3 mJ, the ASE peak intensity was increased by enlarging the length of the ZnO nanorods from 1 μm to 4 μm. In addition, the PL spectrum under 800-nm femtosecond pulse excitation exhibited second harmonic generation, as well as the multiphoton absorption-induced UV emission band. In this research, ZnO nanorods were grown on seed layers by using chemical bath deposition in an aqueous solution of Zn(NO 3 ) 2 and hexamethyltetramine. The seed layers were prepared on conducting glass substrates by dip coating in an aqueous colloidal dispersion containing 50% 70-nm ZnO nanoparticles. Scanning electron microscopy clearly revealed that ZnO nanorods were successfully grown on the seed layers.

  18. Photoelectric properties and charge dynamics in ZnO nanowires/Cu{sub 4}Bi{sub 4}S{sub 9} and ZnO nanowires/In{sub 2}O{sub 3}/Cu{sub 4}Bi{sub 4}S{sub 9} heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Xiangyang, E-mail: lxy081276@126.com, E-mail: yzgu@henu.edu.cn; Wang, Shun; Gu, Yuzong, E-mail: lxy081276@126.com, E-mail: yzgu@henu.edu.cn [Institue of Microsystems Physics and School of Physics and Electronics, Henan University, Kaifeng 475004 (China); Zhang, Jingwei; Zhang, Jiwei [The Key Laboratory for Special Functional Materials of MOE, Henan University, Kaifeng 475004 (China)

    2014-12-28

    ZnO nanowires arrays were preformed in a horizontal double-tube system. Two types of heterostructures (ZnO nanowires/Cu{sub 4}Bi{sub 4}S{sub 9} and ZnO nanowires/In{sub 2}O{sub 3}/Cu{sub 4}Bi{sub 4}S{sub 9}) and three-dimensional solar cells were fabricated with ZnO nanowires arrays as working electrode, In{sub 2}O{sub 3} as buffer layer, and Cu{sub 4}Bi{sub 4}S{sub 9} as inorganic dye and hole collector. It is suggested that two types of heterostructures have the similar absorption properties with single Cu{sub 4}Bi{sub 4}S{sub 9}. However, the results of steady state and electric field-induced surface photovoltage indicate that ZnO nanowires/In{sub 2}O{sub 3}/Cu{sub 4}Bi{sub 4}S{sub 9} exhibits the higher photovoltaic response than ZnO nanowires/Cu{sub 4}Bi{sub 4}S{sub 9}. Using the transient surface photovoltage spectroscopy, we further studied the separation and transport mechanism of photogenerated charges. Furthermore, Cu{sub 4}Bi{sub 4}S{sub 9}/In{sub 2}O{sub 3}/ZnO cells presents the better performance than Cu{sub 4}Bi{sub 4}S{sub 9}/ZnO cells and the highest efficiencies are about 6.4% and 5.2%, respectively. It is suggested that direct paths, interface barrier, built-in electric field, and double energy level matchings between conduction bands (Cu{sub 4}Bi{sub 4}S{sub 9} and In{sub 2}O{sub 3}, In{sub 2}O{sub 3} and ZnO) have obvious effect on the separation of photogenerated charges. Then we discussed the synthetic action on the charge dynamics from these factors.

  19. Observation of local fields in ZnO using the 111Cd probe

    International Nuclear Information System (INIS)

    Sato, W.; Komatsuda, S.; Imagawa, E.; Ohkubo, Y.; Yamada, Y.

    2011-01-01

    The authors prepared the ZnO sample ( 111m Cd-CZO) that contains totally 0.5 at.% of Cd including 111m Cd, and the ZnO sample ( 111m Cd-ICZO) made by doping with 0.5 at.% of In to 111m Cd-CZO, and measured γ-ray perturbed angular correlation (PAC) spectra. They compared these measurement results with the PAC spectra that were observed in the sample ( 111 In-IZO) made by doping with 0.5 at.% of stable In isotope in addition to ( 111 In→) 111 Cd probe, and examined the two characteristics of 111 In-IZO. As for 111 In-IZO, large electric field gradient and late effect due to remarkable EC decay was observed compared with the sample ( 111 In-UZO), where several ppt level of ( 111 In→) 111 Cd probe was solely doped into ZnO. This fact suggests that In atoms and 111 In atoms flocculate locally. When this flocculating condition is made of many In atom groups, several occupation positions of 111 In can be considered, and they cannot form the single frequency component as obtained in the PAC spectra. Therefore, the results of this experiment can be understood that In atoms themselves form the pairs in the nearest position while replacing the lattice positions of Zn. In is generally stable under the condition of three valence, but it can take one valence depending on compounds. Therefore, it can be considered that if In 3+ and In + mixture in this ratio replace Zn 2+ sites, this pairs can exist from the viewpoint of charge balance. (A.O.)

  20. ZnO nanowires for the modification of evanescence-field sensors and the development of novel solar cells; ZnO-Nanodraehte zur Modifizierung von Evaneszenzfeldsensoren und der Entwicklung neuartiger Solarzellen

    Energy Technology Data Exchange (ETDEWEB)

    Boerner, Susanne

    2008-10-02

    The photoluminescence of single structures and the nanowire ensemble were analyzed and compared. This pursued in dependence on the excitation density and the sample temperature. The excitonic emission contributes essentially to the near-band-edge photoluminescence. The ZnO nanowire ensemble exhibits a laser threshold of 500 kW/cm{sup 2} at room temperature. To the photoluminescence spectra the single exciton processes were assigned. The wave-guiding properties were practically detected by means of optical microscopy and micromanipulation. While the main topic of this thesis lied in the analysis of the optical properties of the ZnO nanowires in the last part the implementation of nanostructures in hybrid solar cells was discussed and first results of the characterization of the material complex of p-conducting polymer (Clevios P) and ZnO nanowires presented.

  1. Enhanced ultraviolet photo-response in Dy doped ZnO thin film

    Science.gov (United States)

    Kumar, Pawan; Singh, Ranveer; Pandey, Praveen C.

    2018-02-01

    In the present work, a Dy doped ZnO thin film deposited by the spin coating method has been studied for its potential application in a ZnO based UV detector. The investigations on the structural property and surface morphology of the thin film ensure that the prepared samples are crystalline and exhibit a hexagonal crystal structure of ZnO. A small change in crystallite size has been observed due to Dy doping in ZnO. AFM analysis ascertains the grain growth and smooth surface of the thin films. The Dy doped ZnO thin film exhibits a significant enhancement in UV region absorption as compared to the pure ZnO thin film, which suggests that Dy doped ZnO can be used as a UV detector. Under UV irradiation of wavelength 325 nm, the photocurrent value of Dy doped ZnO is 105.54 μA at 4.5 V, which is 31 times greater than that of the un-doped ZnO thin film (3.39 μA). The calculated value of responsivity is found to increase significantly due to the incorporation of Dy in the ZnO lattice. The observed higher value of photocurrent and responsivity could be attributed to the substitution of Dy in the ZnO lattice, which enhances the conductivity, electron mobility, and defects in ZnO and benefits the UV sensing property.

  2. Preparation and photocatalytic property of a novel dumbbell-shaped ZnO microcrystal photocatalyst

    DEFF Research Database (Denmark)

    Sun, Jian-Hui; Dong, Shu-Ying; Wang, Yong-Kui

    2009-01-01

    achieved 68.0%, 99.0% and 98.5%, the TOC removal efficiencies achieved 43.2%, 59.4% and 70.6%, respectively. Compared to commercial ZnO, 16-22% higher TOC removal efficiency was obtained by the dumbbell-shaped ZnO. The results indicated that the prepared dumbbell-shaped ZnO microcrystal photocatalyst...

  3. Hierarchical nanoflowers assembled with Au nanoparticles decorated ZnO nanosheets toward enhanced photocatalytic properties

    DEFF Research Database (Denmark)

    Yu, Cuiyan; Yu, Yanlong; Xu, Tao

    2017-01-01

    Hierarchical nanoflowers assembled with Au nanoparticles (NPs) decorated ZnO nanosheets (Au-ZnO nanosheet flowers, AZNSFs) were successful synthesized. The AZNSFs showed more efficient activity to photodegradation of RhB than that of pure ZnO nanosheet flowers and commercial ZnO nanopowders. The ...

  4. Enhanced fluorescence imaging performance of hydrophobic colloidal ZnO nanoparticles by a facile method

    International Nuclear Information System (INIS)

    Zang, Zhigang; Tang, Xiaosheng

    2015-01-01

    Highlights: • A dual phase hydrothermal method was developed to synthesize ZnO nanoparticles. • ZnO nanoparticles show a stability and solubility in the aqueous environment. • ZnO nanoparticles with a blue emission wavelength at around 420 nm and small size (30 nm). • ZnO nanoparticles as biological labeling agent was also shown. - Abstract: A facile synthesis method for the formation of ZnO nanoparticles by using a double-phase reaction was demonstrated in this paper. The morphology of the synthesized ZnO nanoparticles shows a flower-shape. Hydrogen peroxide was used as a unique oxygenic source to promote the formation of ZnO in the presence of organic zinc precursor. The as-synthesized ZnO nanoparticles also show a stability and solubility in the aqueous environment. The structure and properties of ZnO nanoparticles were investigated by the transmission electron microscopy (TEM) and X-ray diffraction (XRD) as well as UV–vis and photoluminescence spectroscopy. The as-prepared hydrophobic colloidal ZnO nanoparticles could be modified to become water-soluble via ligand exchange with amineothanethiol⋅HCl while retaining the photoluminescence properties. In addition, the potential application for biological label of water-soluble ZnO nanoparticles were also demonstrated. These results not only have applications towards using colloidal ZnO nanoparticles effectively in biological fluorescence imaging, but also promote its application in the field of targeted drug delivery

  5. Effect of Eu{sup 3+} on the structure, morphology and optical properties of flower-like ZnO synthesized using chemical bath deposition

    Energy Technology Data Exchange (ETDEWEB)

    Koao, L.F. [Department of Physics, University of the Free State (Qwaqwa Campus), Private Bag X13, Phuthaditjhaba ZA9866 (South Africa); Dejene, F.B., E-mail: dejenebf@qwa.ufs.ac.za [Department of Physics, University of the Free State (Qwaqwa Campus), Private Bag X13, Phuthaditjhaba ZA9866 (South Africa); Kroon, R.E. [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa); Swart, H.C., E-mail: swarthc@ufs.ac.za [Department of Physics, University of the Free State, P.O. Box 339, Bloemfontein ZA 9300 (South Africa)

    2014-03-15

    The chemical bath deposition (CBD) method was used to synthesize ZnO undoped and Eu{sup 3+}-doped nanostructures. The Eu{sup 3+} concentration was varied from 0.2 to 5 mol%. The X-ray diffraction (XRD) spectra of the undoped and low concentration Eu{sup 3+} doped ZnO nanostructures correspond to the various planes of a single hexagonal ZnO phase. The estimated crystalline grain size was calculated using the XRD spectra and was found to be in the order of 47±5 nm and independent on the Eu{sup 3+} ion concentration up to 4 mol%. Scanning electron microscopy (SEM) micrographs, however, indicate that the addition of Eu{sup 3+} influences the morphology of the samples. In the UV–vis study the highest band gap energy was obtained for the undoped ZnO. The effective band gap energy of the ZnO decayed exponentially with the addition of Eu{sup 3+} up to 4 mol% where impurity phases started to appear. Although weak luminescence was observed for excitation above the bandgap at 300 nm the best results were obtained by exciting the Eu{sup 3+} directly through the {sup 7}F{sub 0}→{sup 5}L{sub 6} absorption band at 395 nm. Excitation at a wavelength of 395 nm produced the highest Eu{sup 3+} luminescence intensity without any noticeable ZnO defect emissions. The maximum luminescence intensity for this excitation was obtained for ZnO:3 mol% Eu{sup 3+} ions and luminescent quenching was observed for higher Eu concentrations. -- Highlights: • CBD was used to synthesize ZnO undoped and Eu{sup 3+}-doped nanostructures. • The powders having particles with flower-like morphology with good optical properties. • Weak luminescence for excitation above the bandgap at 300 nm. • Excitation at 395 nm produced the highest pure Eu{sup 3+} luminescence.

  6. ZnO Thin Film Electronics for More than Displays

    Science.gov (United States)

    Ramirez, Jose Israel

    Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow

  7. Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition

    Energy Technology Data Exchange (ETDEWEB)

    Son, Hyo-Soo; Choi, Nak-Jung [Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 429-793 (Korea, Republic of); Kim, Kyoung-Bo [Department of Metallurgical and Materials Engineering, Inha Technical College, Incheon 402-752 (Korea, Republic of); Kim, Moojin [Department of Renewable Energy, Jungwon University, Goesan-gun, Chungbuk 367-805 (Korea, Republic of); Lee, Sung-Nam, E-mail: snlee@kpu.ac.kr [Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung 429-793 (Korea, Republic of)

    2016-10-15

    Highlights: • Polar and semipolar ZnO NRs were successfully achieved by hydrothermal synthesis. • Semipolar and polar ZnO NRs were grown on ZnO and AZO/m-sapphire, respectively. • Al % of AZO/m-sapphire enhanced the lateral growth rate of polar ZnO NRs. - Abstract: We investigated the effect of an Al-doped ZnO film on the crystallographic direction of ZnO nanorods (NRs) using electrochemical deposition. From high-solution X-ray diffraction measurements, the crystallographic plane of ZnO NRs grown on (1 0 0) ZnO/m-plane sapphire was (1 0 1). The surface grain size of the (100) Al-doped ZnO (AZO) film decreased with increasing Al content in the ZnO seed layer, implying that the Al dopant accelerated the three-dimensional (3D) growth of the AZO film. In addition, it was found that with increasing Al doping concentration of the AZO seed layer, the crystal orientation of the ZnO NRs grown on the AZO seed layer changed from [1 0 1] to [0 0 1]. With increasing Al content of the nonpolar (1 0 0) AZO seed layer, the small surface grains with a few crystallographic planes of the AZO film changed from semipolar (1 0 1) ZnO NRs to polar (0 0 1) ZnO NRs due to the increase of the vertical [0 0 1] growth rate of the ZnO NRs owing to excellent electrical properties.

  8. ERUPTIVE VARIABLE STARS AND OUTFLOWS IN SERPENS NW

    Energy Technology Data Exchange (ETDEWEB)

    Hodapp, Klaus W. [Institute for Astronomy, University of Hawaii, 640 N. Aohoku Place, Hilo, HI 96720 (United States); Chini, Rolf; Watermann, Ramon; Lemke, Roland, E-mail: hodapp@ifa.hawaii.edu [Ruhr Universitaet Bochum, Astronomisches Institut, Universitaetsstrasse 150, D-44801 Bochum (Germany)

    2012-01-01

    We study the outflow activity, photometric variability, and morphology of three very young stellar objects in the Serpens NW star-forming region: OO Serpentis, EC 37 (V370 Ser), and EC 53 (V371 Ser). High spatial resolution Keck/NIRC2 laser guide star adaptive optics images obtained in 2007 and 2009 in broadband K and in a narrowband filter centered on the 1-0 S(1) emission line of H{sub 2} allow us to identify the outflows from all three objects. We also present new, seeing-limited data on the photometric evolution of the OO Ser reflection nebula and re-analyze previously published data. We find that OO Ser declined in brightness from its outburst peak in 1995 to about 2003, but that this decline has recently stopped and actually reversed itself in some areas of the reflection nebula. The morphology and proper motions of the shock fronts MHO 2218 near EC 37 suggest that they all originate in EC 37 and that this is an outflow seen nearly along its axis. We identify an H{sub 2} jet emerging from the cometary nebula EC 53. The star illuminating EC 53 is periodically variable with a period of 543 days and has a close-by, non-variable companion at a projected distance of 92 AU. We argue that the periodic variability is the result of accretion instabilities triggered by another very close, not directly observable, binary companion and that EC 53 can be understood in the model of a multiple system developing into a hierarchical configuration.

  9. Timing and Spatial Distribution of Loess in Xinjiang, NW China.

    Directory of Open Access Journals (Sweden)

    Yun Li

    Full Text Available Central Asia is one of the most significant loess regions on Earth, with an important role in understanding Quaternary climate and environmental change. However, in contrast to the widely investigated loess deposits in the Chinese Loess Plateau, the Central Asian loess-paleosol sequences are still insufficiently known and poorly understood. Through field investigation and review of the previous literature, the authors have investigated the distribution, thickness and age of the Xinjiang loess, and analyzed factors that control these parameters in the Xinjiang in northwest China, Central Asia. The loess sediments cover river terraces, low uplands, the margins of deserts and the slopes of the Tianshan Mountains and Kunlun Mountains and are also present in the Ili Basin. The thickness of the Xinjiang loess deposits varies from several meters to 670 m. The variation trend of the sand fraction (>63 μm grain-size contour can indicate the local major wind directions, so we conclude that the NW and NE winds are the main wind directions in the North and South Xinjiang, and the westerly wind mainly transport dust into the Ili basin. We consider persistent drying, adequate regional wind energy and well-developed river terraces to be the main factors controlling the distribution, thickness and formation age of the Xinjiang loess. The well-outcropped loess sections have mainly developed since the middle Pleistocene in Xinjiang, reflecting the appearance of the persistent drying and the present air circulation system. However, the oldest loess deposits are as old as the beginning of the Pliocene in the Tarim Basin, which suggests that earlier aridification occurred in the Tarim Basin rather than in the Ili Basin and the Junggar Basin.

  10. Firewood Resource Management in Different Landscapes in NW Patagonia

    Directory of Open Access Journals (Sweden)

    Daniela V. Morales

    2017-09-01

    Full Text Available Ecosystems, their components, processes and functions are all subject to management by human populations, with the purpose of adapting the environments to make them more habitable and ensuring the availability and continuity of subsistence resources. Although a lot of work has been carried out on resources of alimentary or medicinal interest, little has been done on associating processes of domestication with firewood extraction, a practice considered to be destructive of the environment. In the arid steppe of NW Patagonia, inhabited and managed for different purposes for a long time by Mapuche-Tehuelche communities, the gathering of combustible plant species has up to the present time played a crucial role in cooking and heating, and work is required to achieve sustainability of this resource. In this study we evaluate whether environments with less landscape domestication are more intensively used for firewood gathering. Using an ethnobiological approach, information was obtained through participant observation, interviews and free listing. The data were examined using both qualitative and quantitative approaches. Twenty-eight firewood species are gathered, both native (75% and exotic (25%. The supply of firewood mainly depends on gathering from the domesticated (10 species, semi-domesticated (17 species and low human intervention landscapes (17 species. In contrast to our hypothesis, average use intensity is similar in all these landscapes despite their different levels of domestication. That is, the different areas are taken advantage of in a complementary manner in order to satisfy the domestic demand for firewood. Neither do biogeographic origin or utilitarian versatility of collected plants vary significantly between the different landscape levels of domestication. Our results show that human landscape domestication for the provision of firewood seems to be a socio-cultural resilient practice, and shed new light on the role of culture in

  11. Chemical Sensing Applications of ZnO Nanomaterials

    Science.gov (United States)

    Chaudhary, Savita; Umar, Ahmad; Bhasin, K. K.

    2018-01-01

    Recent advancement in nanoscience and nanotechnology has witnessed numerous triumphs of zinc oxide (ZnO) nanomaterials due to their various exotic and multifunctional properties and wide applications. As a remarkable and functional material, ZnO has attracted extensive scientific and technological attention, as it combines different properties such as high specific surface area, biocompatibility, electrochemical activities, chemical and photochemical stability, high-electron communicating features, non-toxicity, ease of syntheses, and so on. Because of its various interesting properties, ZnO nanomaterials have been used for various applications ranging from electronics to optoelectronics, sensing to biomedical and environmental applications. Further, due to the high electrochemical activities and electron communication features, ZnO nanomaterials are considered as excellent candidates for electrochemical sensors. The present review meticulously introduces the current advancements of ZnO nanomaterial-based chemical sensors. Various operational factors such as the effect of size, morphologies, compositions and their respective working mechanisms along with the selectivity, sensitivity, detection limit, stability, etc., are discussed in this article. PMID:29439528

  12. Epitaxial GaN around ZnO nanopillars

    Energy Technology Data Exchange (ETDEWEB)

    Fikry, Mohamed; Scholz, Ferdinand [Institut fuer Optoelektronik, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany); Madel, Manfred; Tischer, Ingo; Thonke, Klaus [Institut fuer Quantenmaterie, Universitaet Ulm, Albert-Einstein-Allee 45, 89081 Ulm (Germany)

    2011-07-01

    We report on an investigation of the epitaxial quality of GaN layers overgrown coaxially around ZnO nanopillars. In a first step, regularly arranged ZnO nanopillars were grown using pre-patterning by e-beam lithography or self-organized hexagonal polystyrene sphere masks. Alternatively, ZnO pillars were also successfully grown on top of GaN pyramids. In a second step, GaN layers were grown around the ZnO pillars by Metal Organic Vapor Phase Epitaxy. At growth temperatures above 800 C, the ZnO pillars are dissolved by the hydrogen carrier gas leaving hollow GaN nanotubes. Characterization involved photoluminescence (PL), scanning electron microscopy and cathodoluminescence. The fair quality of the deposited GaN layers is confirmed by a sharp low temperature PL peak at 3.48 eV attributed to the donor bound exciton emission. Further peaks at 3.42 eV and 3.29 eV show the possible existence of basal plane and prismatic stacking faults.

  13. Vapour transport growth of ZnO nanorods

    Energy Technology Data Exchange (ETDEWEB)

    Mofor, A.C.; Bakin, A.S.; Elshaer, A.; Waag, A. [Technical University Braunschweig, Institute of Semiconductor Technology, Braunschweig (Germany); Fuhrmann, D.; Hangleiter, A. [Technical University Braunschweig, Institute of Applied Physics, Braunschweig (Germany); Bertram, F.; Christen, J. [University of Magdeburg, Department of Solid State Physics, Magdeburg (Germany)

    2007-07-15

    The fabrication of low-dimensional ZnO structures has attracted enormous attention as such nanostructures are expected to pave the way for many interesting applications in optoelectronics, spin electronics gas sensor technology and biomedicine. Many reported fabrication methods, especially for ZnO nanorods are mostly based on catalyst-assisted growth techniques that employ metal-organic sources and other contaminating agents like graphite to grow ZnO nanorods at relatively high temperatures. We report on catalyst-free vapour-phase epitaxy growth of ZnO nanorods on 6H-SiC and (11-20)Al{sub 2}O{sub 3} using purely elemental sources at relatively low temperatures and growth pressure. ZnO nanorods with widths of 80-900 nm and lengths of up to 12 {mu}m were obtained. Nanorod density on the order of 10{sup 9} cm{sup -2} with homogenous luminescence and high purity was also noted. (orig.)

  14. The thermodynamic activity of ZnO in silicate melts

    Science.gov (United States)

    Reyes, R. A.; Gaskell, D. R.

    1983-12-01

    The activity of ZnO in ZnO-SiO2 and CaO-ZnO-SiO2 melts has been measured at 1560 °C using a transpiration technique with CO-CO2 mixtures as the carrier gas. The activities of ZnO in dilute solution in 42 wt pct SiO2-38 wt pct CaO-20 wt pct A12O3 in the range 1400° to 1550 °C and in 62 wt pct SiO2-23.3 wt pct CaO-14.7 wt pct A12O3 at 1550 °C have also been measured. The measured free energies of formation of ZnO-SiO2 melts are significantly more negative than published estimated values and this, together with the behavior observed in the system CaO-Al2O3-SiO2, indicate that ZnO is a relatively basic oxide. The results are discussed in terms of the polymerization model of binary silicate melts and ideal silicate mixing in ternary silicate melts. The behavior of ZnO in dilute solution in CaO-Al2O3-SiO2 melts is discussed in terms of the possibility of the fluxing of ZnO by iron blast furnace slags.

  15. Experimental and numerical optical characterization of plasmonic copper nanoparticles embedded in ZnO fabricated by ion implantation and annealing

    Energy Technology Data Exchange (ETDEWEB)

    Le, Khai Q. [Faculty of Science and Technology, Hoa Sen University, Ho Chi Minh City (Viet Nam); Department of Physics, Faculty of Science, Jazan University, P.O. Box 114, 45142 Jazan (Saudi Arabia); Nguyen, Hieu P.T. [Department of Electrical and Computer Engineering, New Jersey Institute of Technology, NJ 07102 (United States); Ngo, Quang Minh [Institute of Material Sciences, Vietnam Academy of Science and Technology, 18 Hoang Quoc Viet Road, Cau Giay, Hanoi (Viet Nam); Canimoglu, Adil [Nigde University, Faculty of Arts and Sciences, Physics Department, Nigde (Turkey); Can, Nurdogan, E-mail: cannurdogan@yahoo.com [Celal Bayar University, Faculty of Arts and Sciences, Department of Physics, Muradiye, Manisa (Turkey); Department of Physics, Faculty of Science, Jazan University, P.O. Box 114, 45142 Jazan (Saudi Arabia)

    2016-06-05

    Here we describe the successfully fabrication of metal nanoparticle crystals by implanting copper (Cu) ions into single zinc oxide (ZnO) crystals with ion energy of 400 keV at ion doses of 1 × 10{sup 16} to 1 × 10{sup 17} ions/cm{sup 2}. After implantation and post-annealing treatment, the Cu implanted ZnO produces a broad range of luminescence emissions, ranging from green to yellow. A green luminescence peak at 550 nm could be ascribed to the isolated Cu ions. The changes in luminescence emission bands between the initial implant and annealed suggest that the implants give rise to clustering Cu nanoparticles in the host matrix but that the annealing process dissociates these. Numerical modelling of the Cu nanoparticles was employed to simulate their optical properties including the extinction cross section, electron energy loss spectroscopy and cathodoluminescence. We demonstrate that the clustering of nanoparticles generates Fano resonances corresponding to the generation of multiple resonances, while the isolation of nanoparticles results in intensity amplification. - Highlights: • We present the fabrication of metal nanoparticle crystals by implanting Cu into ZnO. • The luminescence properties were studied at different annealing temperature. • Numerical modelling of the Cu nanoparticles was employed. • We demonstrate that the clustering of nanoparticles generates Fano resonances.

  16. Oriented Attachment Is a Major Control Mechanism To Form Nail-like Mn-Doped ZnO Nanocrystals.

    Science.gov (United States)

    Patterson, Samuel; Arora, Priyanka; Price, Paige; Dittmar, Jasper W; Das, Vijay Kumar; Pink, Maren; Stein, Barry; Morgan, David Gene; Losovyj, Yaroslav; Koczkur, Kallum M; Skrabalak, Sara E; Bronstein, Lyudmila M

    2017-12-26

    Here, we present a controlled synthesis of Mn-doped ZnO nanoparticles (NPs) with predominantly nail-like shapes, whose formation occurs via tip-to-base-oriented attachment of initially formed nanopyramids, followed by leveling of sharp edges that lead to smooth single-crystalline "nails". This shape is prevalent in noncoordinating solvents such as octadecene and octadecane. Yet, the double bond in the former promotes oriented attachment. By contrast, Mn-doped ZnO NP synthesis in a weakly coordinating solvent, benzyl ether, results in dendritic structures because of random attachment of initial NPs. Mn-doped ZnO NPs possess a hexagonal wurtzite structure, and in the majority of cases, the NP surface is enriched with Mn, indicating a migration of Mn 2+ ions to the NP surface during the NP formation. When the NP formation is carried out without the addition of octadecyl alcohol, which serves as a surfactant and a reaction initiator, large, concave pyramid dimers are formed whose attachment takes place via basal planes. UV-vis and photoluminescence spectra of these NPs confirm the utility of controlling the NP shape to tune electro-optical properties.

  17. Photoreactivity of ZnO nanoparticles in visible light: Effect of surface states on electron transfer reaction

    International Nuclear Information System (INIS)

    Baruah, Sunandan; Dutta, Joydeep; Sinha, Sudarson Sekhar; Ghosh, Barnali; Pal, Samir Kumar; Raychaudhuri, A. K.

    2009-01-01

    Wide band gap metal oxide semiconductors such as zinc oxide (ZnO) show visible band photolysis that has been employed, among others, to degrade harmful organic contaminants into harmless mineral acids. Metal oxides show enhanced photocatalytic activity with the increase in electronic defects in the crystallites. By introducing defects into the crystal lattice of ZnO nanoparticles, we observe a redshift in the optical absorption shifting from the ultraviolet region to the visible region (400-700 nm), which is due to the creation of intermediate defect states that inhibit the electron hole recombination process. The defects were introduced by fast nucleation and growth of the nanoparticles by rapid heating using microwave irradiation and subsequent quenching during the precipitation reaction. To elucidate the nature of the photodegradation process, picosecond resolved time correlated single photon count (TCSPC) spectroscopy was carried out to record the electronic transitions resulting from the de-excitation of the electrons to their stable states. Photodegradation and TCSPC studies showed that defect engineered ZnO nanoparticles obtained through fast crystallization during growth lead to a faster initial degradation rate of methylene blue as compared to the conventionally synthesized nanoparticles

  18. Influence of the ZnO nanoarchitecture on the electrochemical performances of binder-free anodes for Li storage

    Energy Technology Data Exchange (ETDEWEB)

    Dall' Asta, V.; Tealdi, C.; Resmini, A.; Anselmi Tamburini, U.; Mustarelli, P., E-mail: piercarlo.mustarelli@unipv.it; Quartarone, E.

    2017-03-15

    Zinc oxide nanoarchitectures may be employed as binder-free, high specific capacity anodes for lithium batteries. By means of simple and low-impact wet chemistry approaches, we synthesized 1D (nanorods), 2D (single- and multi-layered nanosheets), and 3D (nanobrushes) ZnO arrays. These nanoarchitectures were compared as far as concerns their electrochemical properties and the structural modifications upon lithiation/delithiation. The best results were offered by 2D nanosheets, which showed reversible capacity of the order of 400 mAhg{sup −1} after 100 cycles at 1 Ag{sup −1}. This was due to: i) small nanoparticles, with average diameter of about 10 nm, which maximize the array specific surface area and favor the formation of the LiZn alloy; ii) the presence of a mesoporous texture, which allows larger space for accommodating the volume changes upon lithiation/delithiation. However, also these 2D structures showed large irreversible capacity losses. Our work highlights the need for more efficient buffering solutions in ZnO binder-free nanostructured anodes. - Graphical abstract: ZnO nanosheets as anode materials for lithium batteries.

  19. Structure and Properties of Al and Ga- Doped ZnO

    Science.gov (United States)

    Temizer, Namik Kemal

    Recently there is tremendous interest in Transparent conducting oxide (TCO) research due to the unlimited and exciting application areas. Current research is mostly focused on finding alternative low cost and sustainable materials in order to replace indium tin oxide (ITO), which caused serious concern due to the increasing cost of indium and chemical stability issues of ITO. The primary aim of this research is to develop alternative TCO materials with superior properties in order to increase the efficiency in optoelectronic applications, as well as to study the properties of these materials to fully characterize them. We have grown Al and Ga-doped ZnO films with an optimized composition under different deposition conditions in order to understand the effect of processing parameters on the film properties. We report a detailed investigation on the structure-property correlations in Ga and Al codoped ZnO films on c-sapphire substrates where the thin film microstructure varies from nanocrystalline to single crystal. We have achieved highly epitaxial films with very high optical transmittance (close to 90%) and low resistivity (˜110muO-cm) values. The films grown in an ambient oxygen partial pressure (PO2 ) of 50 mTorr and at growth temperatures from room temperature to 600°C showed semiconducting behavior, whereas samples grown at a Po2 of 1 mTorr showed metallic nature. The most striking feature is the occurrence of resistivity minima at relatively high temperatures around 110 K in films deposited at high temperatures. The structure-property correlations reveal that point defects play an important role in modifying the structural, optical, electrical and magnetic properties and such changes in physical properties are controlled predominantly by the defect content. To gain a better understanding of the conduction processes in doped ZnO thin films, we have studied the temperature variation of resistivity of some selected samples that showed some interesting behavior

  20. Structural and optical properties of ZnO rods hydrothermally formed on polyethersulfone substrates

    Energy Technology Data Exchange (ETDEWEB)

    Shin, Chang Mi; Jang, Jin Tak; Kim, Chang Yong; Ryu, Hyuk Hyun [Inje University, Gimhae (Korea, Republic of); Lee, Won Jae [Dong-Eui University, Busan (Korea, Republic of); Chang, Ji Ho [Korea Maritime University, Busan (Korea, Republic of); Son, Chang Sik [Silla University, Busan (Korea, Republic of); Choi, Hee Lack [Pukyong National University, Busan (Korea, Republic of)

    2012-06-15

    Various unique ZnO morphologies, such as cigar-like and belt-like structures and microrod and nanorod structures, were formed on flexible polyethersulfone (PES) substrates by using a low temperature hydrothermal route. The structural properties of ZnO depended highly on the precursor concentration. The effect of a thin ZnO seed layer deposited the on PES substrate by using atomic layer deposition on the structural and the optical properties of ZnO hydrothermally grown on the ZnO seed layer/PES substrates was studied. Field emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), and photoluminescence (PL) measurements were employed to analyze the characteristics of hydrothermally-grown ZnO. The diameter of the ZnO nanorods grown on the ZnO seed layer/PES substrates increased with increasing precursor concentration from 0.025 to 0.125 M due to the Ostwald ripening process. ZnO hydrothermally-grown on the ZnO seed layer/PES substrates at a low precursor concentration showed better structural properties than ZnO formed without a seed layer. Well-formed ZnO nanorods deposited on the ZnO seed layer/PES substrates showed two PL peaks, one in the ultraviolet and the other in the visible region, whereas horizontally positioned ZnO formed on the PES substrate in the absence of a seed layer emitted only one broad PL peak in the violet region. The ZnO grown on PES substrates in this work can be used as high-quality transparent electrodes for solar cells fabricated on flexible substrates.