WorldWideScience

Sample records for single transistor learning

  1. Single-transistor-clocked flip-flop

    Energy Technology Data Exchange (ETDEWEB)

    Zhao, Peiyi; Darwish, Tarek; Bayoumi, Magdy

    2005-08-30

    The invention provides a low power, high performance flip-flop. The flip-flop uses only one clocked transistor. The single clocked transistor is shared by the first and second branches of the device. A pulse generator produces a clock pulse to trigger the flip-flop. In one preferred embodiment the device can be made as a static explicit pulsed flip-flop which employs only two clocked transistors.

  2. Scaling Beyond Moore: Single Electron Transistor and Single Atom Transistor Integration on CMOS

    OpenAIRE

    Deshpande , Veeresh

    2012-01-01

    Continuous scaling of MOSFET dimensions has led us to the era of nanoelectronics. Multigate FET (MuGFET) architecture with 'nanowire channel'is being considered as one feasible enabler of MOSFET scaling to end-of-roadmap. Alongside classical CMOS or Moore's law scaling, many novel device proposals exploiting nanoscale phenomena have been made. Single Electron Transistor (SET), with its unique 'Coulomb Blockade' phenomena, and Single Atom Transistor (SAT), as an ultimately scaled transistor, a...

  3. Single-dopant resonance in a single-electron transistor

    OpenAIRE

    Golovach, V. N.; Jehl, X.; Houzet, M.; Pierre, M.; Roche, B.; Sanquer, M.; Glazman, L. I.

    2011-01-01

    Single dopants in semiconductor nanostructures have been studied in great details recently as they are good candidates for quantum bits, provided they are coupled to a detector. Here we report coupling of a single As donor atom to a single-electron transistor (SET) in a silicon nanowire field-effect transistor. Both capacitive and tunnel coupling are achieved, the latter resulting in a dramatic increase of the conductance through the SET, by up to one order of magnitude. The experimental resu...

  4. Single-dopant resonance in a single-electron transistor

    Science.gov (United States)

    Golovach, V. N.; Jehl, X.; Houzet, M.; Pierre, M.; Roche, B.; Sanquer, M.; Glazman, L. I.

    2011-02-01

    Single dopants in semiconductor nanostructures have been studied in great detail recently as they are good candidates for quantum bits, provided they are coupled to a detector. Here we report the coupling of a single As donor atom to a single-electron transistor (SET) in a silicon nanowire field-effect transistor. Both capacitive and tunnel coupling are achieved, the latter resulting in a dramatic increase of the conductance through the SET, by up to one order of magnitude. The experimental results are well explained by the rate-equation theory developed in parallel with the experiment.

  5. Light Emitting Transistors of Organic Single Crystals

    Science.gov (United States)

    Iwasa, Yoshihiro

    2009-03-01

    Organic light emitting transistors (OLETs) are attracting considerable interest as a novel function of organic field effect transistors (OFETs). Besides a smallest integration of light source and current switching devices, OLETs offer a new opportunity in the fundamental research on organic light emitting devices. The OLET device structure allows us to use organic single crystals, in contrast to the organic light emitting diodes (OLEDs), the research of which have been conducted predominantly on polycrystalline or amorphous thin films. In the case of OFETs, use of single crystals have produced a significant amount of benefits in the studies of pursuit for the highest performance limit of FETs, intrinsic transport mechanism in organic semiconductors, and application of the single crystal transistors. The study on OLETs have been made predominantly on polycrystalline films or multicomponent heterojunctions, and single crystal study is still limited to tetracene [1] and rubrene [2], which are materials with relatively high mobility, but with low photoluminescence efficiency. In this paper, we report fabrication of single crystal OLETs of several kinds of highly luminescent molecules, emitting colorful light, ranging from blue to red. Our strategy is single crystallization of monomeric or oligomeric molecules, which are known to have a very high photoluminescence efficiency. Here we report the result on single crystal LETs of rubrene (red), 4,4'-bis(diphenylvinylenyl)-anthracene (green), 1,4-bis(5-phenylthiophene-2-yl)benzene (AC5) (green), and 1,3,6,8-tetraphenylpyrene (TPPy) (blue), all of which displayed ambipolar transport as well as peculiar movement of voltage controlled movement of recombination zone, not only from the surface of the crystal but also from the edges of the crystals, indicting light confinement inside the crystal. Realization of ambipolar OLET with variety of single crystals indicates that the fabrication method is quite versatile to various light

  6. Single electron transistor in pure silicon

    Science.gov (United States)

    Hu, Binhui

    As promising candidates for spin qubits, semiconductor quantum dots (QDs) have attracted tremendous research efforts. Currently most advanced progress is from GaAs QDs. Compared to GaAs, lateral QDs in 28silicon are expected to have a spin coherence time orders of magnitude longer, because 28Si has zero nuclear spin, and there is no hyperfine interaction between electron spins and nuclear spins. We have developed enhancement mode metal-oxide-semiconductor (MOS) single electron transistors (SETs) using pure silicon wafers with a bi-layer gated configuration. In an MOS-SET, the top gate is used to induce a two-dimensional electron gas (2DEG), just as in an MOS field effect transistor. The side gates deplete the 2DEG into a QD and two point contact channels; one connects the QD to the source reservoir, and the other connects the QD to the drain reservoir. We have systematically investigated the MOS-SETs at 4.2 K, and separately in a dilution refrigerator with a base temperature of 10 mK. The data show that there is an intrinsic QD in each point contact channel due to the local potential fluctuations in these SETs. However, after scaling down the SETs, we have found that the intrinsic QDs can be removed and the electrostatically defined dots dominate the device behavior, but these devices currently only work in the many-electron regime. In order to realize single electron confinement, it is necessary to continue scaling down the device and improving the interface quality. To explore the spin dynamics in silicon, we have investigated a single intrinsic QD by applying a magnetic field perpendicular to the sample surface. The magnetic field dependence of the ground-state and excited-state energy levels of the QD mostly can be explained by the Zeeman effect, with no obvious orbital effect up to 9 T. The two-electron singlet-triplet (ST) transition is first time directly observed in a silicon QD by excitation spectroscopy. In this ST transition, electron-electron Coulomb

  7. Asymmetric tunable tunneling magnetoresistance in single-electron transistors

    CERN Document Server

    Pirmann, M; Schön, G

    2000-01-01

    We show that the tunneling magnetoresistance (TMR) of a ferromagnetic single-electron transistor in the sequential tunneling regime shows asymmetric Coulomb blockade oscillations as a function of gate voltage if the individual junction-TMRs differ. The relative amplitude of these oscillations grows significantly if the bias voltage is increased, becoming as large as 30% when the bias voltage is comparable to the charging energy of the single-electron transistor. This might be useful for potential applications requiring a tunable TMR.

  8. Single- and double-island ferromagnetic single-electron transistors

    International Nuclear Information System (INIS)

    Barnas, J.; Weymann, I.; Wisniewska, J.; Kowalik, M.; Kunert, H.W.

    2006-01-01

    Electronic transport in a ferromagnetic single-electron transistor has been considered theoretically in the sequential tunneling regime. The device consists of two external leads and one or two islands as the central part, connected to the leads by tunneling barriers. External gates are additionally attached to the islands. Generally, the two external electrodes and the islands can be ferromagnetic with arbitrary orientation of the corresponding magnetic moments. We have carried out detailed theoretical analysis of the current-voltage characteristics and spin-valve magnetoresistance in the limit of fast spin relaxation on the islands. Asymmetry in tunneling probabilities of spin-majority and spin-minority electrons leads to interesting features in the transport characteristics, like for instance magnetoresistance oscillations with the bias and gate voltages, negative differential resistance, and others

  9. Single-molecule probes in organic field-effect transistors

    NARCIS (Netherlands)

    Nicolet, Aurélien Armel Louis

    2007-01-01

    The goal of this thesis is to study charge transport phenomena in organic materials. This is done optically by means of single-molecule spectroscopy in a field-effect transistor based on a molecular crystal. We present (in Chapter 2) a fundamental requirement for single-molecule spectroscopy

  10. Transistors-From Point Contact to Single Electron

    Indian Academy of Sciences (India)

    Home; Journals; Resonance – Journal of Science Education; Volume 2; Issue 12. Transistors – From Point Contact to Single Electron. D N Bose. General Article Volume 2 Issue 12 December 1997 pp 39-54. Fulltext. Click here to view fulltext PDF. Permanent link: http://www.ias.ac.in/article/fulltext/reso/002/12/0039-0054 ...

  11. Metal-nanoparticle single-electron transistors fabricated using electromigration

    DEFF Research Database (Denmark)

    Bolotin, K I; Kuemmeth, Ferdinand; Pasupathy, A N

    2004-01-01

    We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap created between two electrodes using electromigration, all...

  12. Low-frequency noise in single electron tunneling transistor

    DEFF Research Database (Denmark)

    Tavkhelidze, A.N.; Mygind, Jesper

    1998-01-01

    The noise in current biased aluminium single electron tunneling (SET) transistors has been investigated in the frequency range of 5 mHz shielding including resistive coaxial lines, that prevents spurious electromagnetic radiation and especially high energy......, we find the same input charge noise, typically QN = 5 × 10–4 e/Hz1/2 at 10 Hz, with and without the HF shielding. At lower frequencies, the noise is due to charge trapping, and the voltage noise pattern superimposed on the V(Vg) curve (voltage across transistor versus gate voltage) strongly depends...

  13. Reconfigurable Boolean logic using magnetic single-electron transistors.

    Directory of Open Access Journals (Sweden)

    M Fernando Gonzalez-Zalba

    Full Text Available We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET. The device consists of an aluminium single-electron transistor with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer, which induces a voltage shift on the Coulomb blockade oscillations of the MSET. We show that we can arbitrarily reprogram the function of the device from an n-type SET for in-plane magnetization of the GaMnAs layer to p-type SET for out-of-plane magnetization orientation. Moreover, we demonstrate a set of reprogrammable Boolean gates and its logical complement at the single device level. Finally, we propose two sets of reconfigurable binary gates using combinations of two MSETs in a pull-down network.

  14. Reconfigurable Boolean Logic Using Magnetic Single-Electron Transistors

    Science.gov (United States)

    Gonzalez-Zalba, M. Fernando; Ciccarelli, Chiara; Zarbo, Liviu P.; Irvine, Andrew C.; Campion, Richard C.; Gallagher, Bryan L.; Jungwirth, Tomas; Ferguson, Andrew J.; Wunderlich, Joerg

    2015-01-01

    We propose a novel hybrid single-electron device for reprogrammable low-power logic operations, the magnetic single-electron transistor (MSET). The device consists of an aluminium single-electron transistor with a GaMnAs magnetic back-gate. Changing between different logic gate functions is realized by reorienting the magnetic moments of the magnetic layer, which induces a voltage shift on the Coulomb blockade oscillations of the MSET. We show that we can arbitrarily reprogram the function of the device from an n-type SET for in-plane magnetization of the GaMnAs layer to p-type SET for out-of-plane magnetization orientation. Moreover, we demonstrate a set of reprogrammable Boolean gates and its logical complement at the single device level. Finally, we propose two sets of reconfigurable binary gates using combinations of two MSETs in a pull-down network. PMID:25923789

  15. Spin-Dependent Quasiparticle Transport in Aluminum Single Electron Transistors

    OpenAIRE

    Ferguson, A. J.; Andresen, S. E.; Brenner, R.; Clark, R. G.

    2006-01-01

    We investigate the effect of Zeeman-splitting on quasiparticle transport in normal-superconducting-normal (NSN) aluminum single electron transistors (SETs). In the above-gap transport the interplay of Coulomb blockade and Zeeman-splitting leads to spin-dependence of the sequential tunneling. This creates regimes where either one or both spin species can tunnel onto or off the island. At lower biases, spin-dependence of the single quasiparticle state is studied and operation of the device as a...

  16. Bipolar single-wall carbon nanotube field-effect transistor

    OpenAIRE

    Babic, Bakir; Iqbal, Mahdi; Schonenberger, Christian

    2002-01-01

    We use a simultaneous flow of ethylene and hydrogen gases to grow single wall carbon nanotubes by chemical vapor deposition. Strong coupling to the gate is inferred from transport measurements for both metallic and semiconducting tubes. At low-temperatures, our samples act as single-electron transistors where the transport mechanism is mainly governed by Coulomb blockade. The measurements reveal very rich quantized energy level spectra spanning from valence to conduction band. The Coulomb dia...

  17. Organic field-effect transistors using single crystals.

    Science.gov (United States)

    Hasegawa, Tatsuo; Takeya, Jun

    2009-04-01

    Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm 2 Vs -1 , achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

  18. Organic field-effect transistors using single crystals

    Directory of Open Access Journals (Sweden)

    Tatsuo Hasegawa and Jun Takeya

    2009-01-01

    Full Text Available Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs, the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20–40 cm2 Vs−1, achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

  19. Gain Dependence of the Noise in the Single Electron Transistor

    OpenAIRE

    Starmark, B.; Henning, Torsten; Korotkov, A. N.; Claeson, T.; Delsing, P.

    1998-01-01

    An extensive investigation of low frequency noise in single electron transistors as a function of gain is presented. Comparing the output noise with gain for a large number of bias points, it is found that the noise is dominated by external charge noise. For low gains we find an additional noise contribution which is compared to a model including resistance fluctuations. We conclude that this excess noise is not only due to resistance fluctuations. For one sample, we find a record low minimum...

  20. Single-layer MoS2 transistors.

    Science.gov (United States)

    Radisavljevic, B; Radenovic, A; Brivio, J; Giacometti, V; Kis, A

    2011-03-01

    Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.

  1. Intrinsic magnetic refrigeration of a single electron transistor

    Science.gov (United States)

    Ciccarelli, C.; Campion, R. P.; Gallagher, B. L.; Ferguson, A. J.

    2016-02-01

    In this work, we show that aluminium doped with low concentrations of magnetic impurities can be used to fabricate quantum devices with intrinsic cooling capabilities. We fabricate single electron transistors made of aluminium doped with 2% Mn by using a standard multi angle evaporation technique and show that the quantity of metal used to fabricate the devices generates enough cooling power to achieve a drop of 160 mK in the electron temperature at the base temperature of our cryostat (300 mK). The cooling mechanism is based on the magneto-caloric effect from the diluted Mn moments.

  2. Intrinsic magnetic refrigeration of a single electron transistor

    International Nuclear Information System (INIS)

    Ciccarelli, C.; Ferguson, A. J.; Campion, R. P.; Gallagher, B. L.

    2016-01-01

    In this work, we show that aluminium doped with low concentrations of magnetic impurities can be used to fabricate quantum devices with intrinsic cooling capabilities. We fabricate single electron transistors made of aluminium doped with 2% Mn by using a standard multi angle evaporation technique and show that the quantity of metal used to fabricate the devices generates enough cooling power to achieve a drop of 160 mK in the electron temperature at the base temperature of our cryostat (300 mK). The cooling mechanism is based on the magneto-caloric effect from the diluted Mn moments

  3. Effects of overheating in a single-electron transistor

    DEFF Research Database (Denmark)

    Korotkov, A. N.; Samuelsen, Mogens Rugholm; Vasenko, S. A.

    1994-01-01

    Heating of a single-electron transistor (SET) caused by the current flowing through it is considered. The current and the temperature increase should be calculated self-consistently taking into account various paths of the heat drain. Even if there is no heat drain from the central electrode...... of the SET due to transfer of phonons, the temperature of this electrode remains finite because electron tunneling decreases the temperature difference between the central and outer electrodes. Overheating effects can cause hysteresis in the I-V curve of the SET in the vicinity of the Coulomb blockade...

  4. Single-event burnout of power bipolar junction transistors

    International Nuclear Information System (INIS)

    Titus, J.L.; Johnson, G.H.; Schrimpf, R.D.; Galloway, K.F.

    1991-01-01

    Experimental evidence of single-event burnout of power bipolar junctions transistors (BJTs) is reported for the first time. Several commercial power BJTs were characterized in a simulated cosmic ray environment using mono-energetic ions at the tandem Van de Graaff accelerator facility at Brookhaven National Laboratory. Most of the device types exposed to this simulated environment exhibited burnout behavior. In this paper the experimental technique, data, and results are presented, while a qualitative model is used to help explain those results and trends observed in this experiment

  5. Single electron transistor with P-type sidewall spacer gates.

    Science.gov (United States)

    Lee, Jung Han; Li, Dong Hua; Lee, Joung-Eob; Kang, Kwon-Chil; Kim, Kyungwan; Park, Byung-Gook

    2011-07-01

    A single-electron transistor (SET) is one of the promising solutions to overcome the scaling limit of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). Up to now, various kinds of SETs are being proposed and SETs with a dual gate (DG) structure using an electrical potential barrier have been demonstrated for room temperature operation. To operate DG-SETs, however, extra bias of side gates is necessary. It causes new problems that the electrode for side gates and the extra bias for electrical barrier increase the complexity in circuit design and operation power consumption, respectively. For the reason, a new mechanism using work function (WF) difference is applied to operate a SET at room temperature by three electrodes. Its structure consists of an undoped active region, a control gate, n-doped source/drain electrodes, and metal/silicide or p-type silicon side gates, and a SET with metal/silicide gates or p-type silicon gates forms tunnel barriers induced by work function between an undoped channel and grounded side gates. Via simulation, the effectiveness of the new mechanism is confirmed through various silicide materials that have different WF values. Furthermore, by considering the realistic conditions of the fabrication process, SET with p-type sidewall spacer gates was designed, and its brief fabrication process was introduced. The characteristics of its electrical barrier and the controllability of its control gate were also confirmed via simulation. Finally, a single-hole transistor with n-type sidewall spacer gates was designed.

  6. Coulomb blockade in a Si channel gated by an Al single-electron transistor

    OpenAIRE

    Sun, L.; Brown, K. R.; Kane, B. E.

    2007-01-01

    We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated with Coulomb blockade in the channel, revealing the formation of a Si single-electron transistor. Abrupt steps present in sweeps of the Al transistor conductance versus gate voltage are correlated with single-electron charging events in the Si t...

  7. Spin-gating of a conventional aluminum single electron transistor

    Science.gov (United States)

    Zarbo, Liviu P.; Ciccarelli, Chiara; Irvine, Andy; Wunderlich, Jörg; Champion, Richard; Gallagher, Brian; Jungwirth, Tomáš; Ferguson, Andrew

    2012-02-01

    We report the realization of a single electron transistor in which electron transport from an aluminum source electrode to an aluminum drain electrode via an aluminum island is controlled by spins in a capacitively coupled magnetic gate electrode. The origin of the effect is in the change of the chemical potential on the gate, formed by the ferromagnetic semiconductor GaMnAs, with changing the direction of the magnetization. In agreement with experimental observations, microscopically calculated anisotropies of the chemical potential with respect to the magnetization orientation are of the order of 10μV which is comparable to the electrical gate voltages required to control the on and off state of the single electron transistor. Our phenomenon belongs to the family of anisotropic magnetoresistance effects which can be observed in ohmic, tunneling or other device geometries. In our case, the entire phenomenon is coded in the dependence of the chemical potential on the spin orientation which allowed us to remove the spin functionality from all current contacts and channels and place it in the capacitively coupled gate electrode. Our spintronic device therefore operates without spin current.

  8. Electrical coupling of single cardiac rat myocytes to field-effect and bipolar transistors.

    Science.gov (United States)

    Kind, Thomas; Issing, Matthias; Arnold, Rüdiger; Müller, Bernt

    2002-12-01

    A novel bipolar transistor for extracellular recording the electrical activity of biological cells is presented, and the electrical behavior compared with the field-effect transistor (FET). Electrical coupling is examined between single cells separated from the heart of adults rats (cardiac myocytes) and both types of transistors. To initiate a local extracellular voltage, the cells are periodically stimulated by a patch pipette in voltage clamp and current clamp mode. The local extracellular voltage is measured by the planar integrated electronic sensors: the bipolar and the FET. The small signal transistor currents correspond to the local extracellular voltage. The two types of sensor transistors used here were developed and manufactured in the laboratory of our institute. The manufacturing process and the interfaces between myocytes and transistors are described. The recordings are interpreted by way of simulation based on the point-contact model and the single cardiac myocyte model.

  9. A simple and controlled single electron transistor based on doping modulation in silicon nanowires

    OpenAIRE

    Hofheinz, M.; Jehl, X.; Sanquer, M.; Molas, G.; Vinet, M.; Deleonibus, S.

    2006-01-01

    A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel of the transistor is the Coulomb island at low temperature. Two silicon nitride spacers deposited on each side of the gate create a modulation of doping along the nanowire that creates tunnel barriers. Such barriers are fixed and controlled, like in metallic...

  10. Kondo effect in single-molecule magnet transistors

    Science.gov (United States)

    Gonzalez, Gabriel; Leuenberger, Michael; Mucciolo, Eduardo

    2009-03-01

    We present a careful and thorough microscopic derivation of the anisotropic Kondo Hamiltonian for single-molecule magnet (SMM) transistors. When the molecule is strongly coupled to metallic leads, we show that by applying a transverse magnetic field it is possible to topologically induce or quench the Kondo effect in the conductance of a SMM with either an integer or a half-integer spin S>1/2. This topological Kondo effect is due to the Berry-phase interference between multiple quantum tunneling paths of the spin. We calculate the renormalized Berry-phase oscillations of the two Kondo peaks as a function of a transverse magnetic field by means of the poor man's scaling approach. We illustrate our findings with the SMM Ni4, which we propose as a possible candidate for the experimental observation of the conductance oscillations.

  11. Enhancement mode single electron transistor in pure silicon

    Science.gov (United States)

    Hu, Binhui; Yang, C. H.; Jones, G. M.; Yang, M. J.

    2007-03-01

    Solid state implementations of lateral qubits offer the advantage of being scalable and can be easily integrated by existing main stream IC technologies. In addition, the two Zeeman states of an electron spin in a quantum dot (QD) provide a promising candidate for a qubit. Spins in lateral QDs in the GaAs/AlGaAs single electron transistors (SETs) have been intensively investigated. In contrast, Si provides a number of advantages, including long spin coherence time, large g-factor, and small spin-orbit coupling effect. We have demonstrated Si SET in the few electron regime.* In this talk, we will report the isolation of a single electron in a Si QD using a fabrication technique that incorporates the standard Al/SiO2/Si system with an enhancement mode SET structure. Our SET is built in highly resistive Si substrates with bilayer gates. The high purity Si minimizes the potential disorder from impurities. The top gate induces 2D electrons, and several side gates help define the tunneling barriers, fine tune the shape of the QD, and control the number of electrons in it. We will discuss the operating principle, computer simulation, and low temperature transport data. *APPLIED PHYSICS LETTERS 89, 073106 (2006)

  12. Towards parallel fabrication of single electron transistors using carbon nanotubes.

    Science.gov (United States)

    Islam, Muhammad R; Joung, Daeha; Khondaker, Saiful I

    2015-06-07

    Single electron transistors (SETs) are considered to be promising building blocks for post CMOS era electronic devices, however, a major bottleneck for practical realization of SET based devices is a lack of a parallel fabrication approach. Here, we have demonstrated a technique for the scalable fabrication of SETs using single-walled carbon nanotubes (SWNTs). The approach is based on the integration of solution processed individual SWNTs via dielectrophoresis (DEP) at the selected position of the circuit with a 100 nm channel length, where the metal-SWNT Schottky contact works as a tunnel barrier. Measurements carried out at a low temperature (4.2 K) show that the majority of the devices with a contact resistance (RT) > 100 kΩ display SET behavior. For the devices with 100 kΩ 1 MΩ) multiple QD behavior was observed. From the transport study of 50 SWNT devices, a total of 38 devices show SET behavior giving a yield of 76%. The results presented here are a significant step forward for the practical realization of SET based devices.

  13. Single-electron transistors fabricated with sidewall spacer patterning

    Science.gov (United States)

    Park, Byung-Gook; Kim, Dae Hwan; Kim, Kyung Rok; Song, Ki-Whan; Lee, Jong Duk

    2003-09-01

    We have implemented a sidewall spacer patterning method for novel dual-gate single-electron transistor (DGSET) and metal-oxide-semiconductor-based SET (MOSET) based on the uniform SOI wire, using conventional lithography and processing technology. A 30 nm wide silicon quantum wire is defined by a sidewall spacer patterning method, and depletion gates for two tunnel junctions of the DGSET are formed by the doped polycrystalline silicon sidewall. The fabricated DGSET and MOSET show clear single-electron tunneling phenomena at liquid nitrogen temperature and insensitivity of the Coulomb oscillation period to gate bias conditions. On the basis of the phase control capability of the sidewall depletion gates, we have proposed a complementary self-biasing method, which enables the SET/CMOS hybrid multi-valued logic (MVL) to operate perfectly well at high temperature, where the peak-to-valley current ratio of Coulomb oscillation severely decreases. The suggested scheme is evaluated by SPICE simulation with an analytical DGSET model, and it is confirmed that even DGSETs with a large Si island can be utilized efficiently in the multi-valued logic.

  14. Probing Spin Accumulation induced Magnetocapacitance in a Single Electron Transistor.

    Science.gov (United States)

    Lee, Teik-Hui; Chen, Chii-Dong

    2015-09-08

    The interplay between spin and charge in solids is currently among the most discussed topics in condensed matter physics. Such interplay gives rise to magneto-electric coupling, which in the case of solids was named magneto-electric effect, as predicted by Curie on the basis of symmetry considerations. This effect enables the manipulation of magnetization using electrical field or, conversely, the manipulation of electrical polarization by magnetic field. The latter is known as the magnetocapacitance effect. Here, we show that non-equilibrium spin accumulation can induce tunnel magnetocapacitance through the formation of a tiny charge dipole. This dipole can effectively give rise to an additional serial capacitance, which represents an extra charging energy that the tunneling electrons would encounter. In the sequential tunneling regime, this extra energy can be understood as the energy required for a single spin to flip. A ferromagnetic single-electron-transistor with tunable magnetic configuration is utilized to demonstrate the proposed mechanism. It is found that the extra threshold energy is experienced only by electrons entering the islands, bringing about asymmetry in the measured Coulomb diamond. This asymmetry is an unambiguous evidence of spin accumulation induced tunnel magnetocapacitance, and the measured magnetocapacitance value is as high as 40%.

  15. Complementary Self-Biased Logics Based on Single-Electron Transistor (SET)/CMOS Hybrid Process

    Science.gov (United States)

    Song, Ki-Whan; Lee, Yong Kyu; Sim, Jae Sung; Kim, Kyung Rok; Lee, Jong Duk; Park, Byung-Gook; You, Young Sub; Park, Joo-On; Jin, You Seung; Kim, Young-Wug

    2005-04-01

    We propose a complementary self-biasing method which enables the single-electron transistor (SET)/complementary metal-oxide semiconductor (CMOS) hybrid multi-valued logics (MVLs) to operate well at high temperatures, where the peak-to-valley current ratio (PVCR) of the Coulomb oscillation markedly decreases. The new architecture is implemented with a few transistors by utilizing the phase control capability of the sidewall depletion gates in dual-gate single-electron transistors (DGSETs). The suggested scheme is evaluated by a SPICE simulation with an analytical DGSET model. Furthermore, we have developed a new process technology for the SET/CMOS hybrid systems. We have confirmed that both of the fabricated devices, namely, SET and CMOS transistors, exhibit the ideal characteristics for the complementary self-biasing scheme: the SET shows clear Coulomb oscillations with a 100 mV period and the CMOS transistors show a high voltage gain.

  16. Neural Circuitry Based on Single Electron Transistors and Single Electron Memories

    Directory of Open Access Journals (Sweden)

    Aïmen BOUBAKER

    2014-05-01

    Full Text Available In this paper, we propose and explain a neural circuitry based on single electron transistors ‘SET’ which can be used in classification and recognition. We implement, after that, a Winner-Take-All ‘WTA’ neural network with lateral inhibition architecture. The original idea of this work is reflected, first, in the proposed new single electron memory ‘SEM’ design by hybridising two promising Single Electron Memory ‘SEM’ and the MTJ/Ring memory and second, in modeling and simulation results of neural memory based on SET. We prove the charge storage in quantum dot in two types of memories.

  17. Single Nucleotide Polymorphism Detection Using Au-Decorated Single-Walled Carbon Nanotube Field Effect Transistors

    Directory of Open Access Journals (Sweden)

    Keum-Ju Lee

    2011-01-01

    Full Text Available We demonstrate that Au-cluster-decorated single-walled carbon nanotubes (SWNTs may be used to discriminate single nucleotide polymorphism (SNP. Nanoscale Au clusters were formed on the side walls of carbon nanotubes in a transistor geometry using electrochemical deposition. The effect of Au cluster decoration appeared as hole doping when electrical transport characteristics were examined. Thiolated single-stranded probe peptide nucleic acid (PNA was successfully immobilized on Au clusters decorating single-walled carbon nanotube field-effect transistors (SWNT-FETs, resulting in a conductance decrease that could be explained by a decrease in Au work function upon adsorption of thiolated PNA. Although a target single-stranded DNA (ssDNA with a single mismatch did not cause any change in electrical conductance, a clear decrease in conductance was observed with matched ssDNA, thereby showing the possibility of SNP (single nucleotide polymorphism detection using Au-cluster-decorated SWNT-FETs. However, a power to discriminate SNP target is lost in high ionic environment. We can conclude that observed SNP discrimination in low ionic environment is due to the hampered binding of SNP target on nanoscale surfaces in low ionic conditions.

  18. Effects of breathing and oblong mode phonons on transport properties in a single-electron transistor.

    Science.gov (United States)

    Nishiguchi, Norihiko; Wybourne, Martin N

    2010-02-17

    We investigate theoretically the transport characteristics of a single-electron transistor affected by the dynamic deformation of the device configuration due to phonons. By considering changes in capacitances and tunnel resistances caused by the breathing and oblong vibrations of the island that forms part of the transistor, we formulate the electron-phonon interaction peculiar to the device and derive its transport properties by means of the master equation. For a single electron transistor with a gold nanoparticle island of radius 1 nm, we demonstrate the contribution to the transport properties that originates from tunneling channels associated with THz phonon emission and absorption.

  19. Single molecule transistor based nanopore for the detection of nicotine

    Science.gov (United States)

    Ray, S. J.

    2014-12-01

    A nanopore based detection methodology was proposed and investigated for the detection of Nicotine. This technique uses a Single Molecular Transistor working as a nanopore operational in the Coulomb Blockade regime. When the Nicotine molecule is pulled through the nanopore area surrounded by the Source(S), Drain (D), and Gate electrodes, the charge stability diagram can detect the presence of the molecule and is unique for a specific molecular structure. Due to the weak coupling between the different electrodes which is set by the nanopore size, the molecular energy states stay almost unaffected by the electrostatic environment that can be realised from the charge stability diagram. Identification of different orientation and position of the Nicotine molecule within the nanopore area can be made from specific regions of overlap between different charge states on the stability diagram that could be used as an electronic fingerprint for detection. This method could be advantageous and useful to detect the presence of Nicotine in smoke which is usually performed using chemical chromatography techniques.

  20. Single molecule transistor based nanopore for the detection of nicotine

    Energy Technology Data Exchange (ETDEWEB)

    Ray, S. J., E-mail: ray.sjr@gmail.com [Institute of Materials Science, Technical University of Darmstadt, Alarich-Weiss-Str. 2, 64287 Darmstadt (Germany)

    2014-12-28

    A nanopore based detection methodology was proposed and investigated for the detection of Nicotine. This technique uses a Single Molecular Transistor working as a nanopore operational in the Coulomb Blockade regime. When the Nicotine molecule is pulled through the nanopore area surrounded by the Source(S), Drain (D), and Gate electrodes, the charge stability diagram can detect the presence of the molecule and is unique for a specific molecular structure. Due to the weak coupling between the different electrodes which is set by the nanopore size, the molecular energy states stay almost unaffected by the electrostatic environment that can be realised from the charge stability diagram. Identification of different orientation and position of the Nicotine molecule within the nanopore area can be made from specific regions of overlap between different charge states on the stability diagram that could be used as an electronic fingerprint for detection. This method could be advantageous and useful to detect the presence of Nicotine in smoke which is usually performed using chemical chromatography techniques.

  1. Poly-silicon quantum-dot single-electron transistors

    International Nuclear Information System (INIS)

    Kang, Kwon-Chil; Lee, Joung-Eob; Lee, Jung-Han; Lee, Jong-Ho; Shin, Hyung-Cheol; Park, Byung-Gook

    2012-01-01

    For operation of a single-electron transistors (SETs) at room temperature, we proposed a fabrication method for a SET with a self-aligned quantum dot by using polycrystalline silicon (poly-Si). The self-aligned quantum dot is formed by the selective etching of a silicon nanowire on a planarized surface and the subsequent deposition and etch-back of poly-silicon or chemical mechanical polishing (CMP). The two tunneling barriers of the SET are fabricated by thermal oxidation. Also, to decrease the leakage current and control the gate capacitance, we deposit a hard oxide mask layer. The control gate is formed by using an electron beam and photolithography on chemical vapor deposition (CVD). Owing to the small capacitance of the narrow control gate due to the tetraethyl orthosilicate (TEOS) hard mask, we observe clear Coulomb oscillation peaks and differential trans-conductance curves at room temperature. The clear oscillation period of the fabricated SET is 2.0 V.

  2. Photonic transistor and router using a single quantum-dot-confined spin in a single-sided optical microcavity.

    Science.gov (United States)

    Hu, C Y

    2017-03-28

    The future Internet is very likely the mixture of all-optical Internet with low power consumption and quantum Internet with absolute security guaranteed by the laws of quantum mechanics. Photons would be used for processing, routing and com-munication of data, and photonic transistor using a weak light to control a strong light is the core component as an optical analogue to the electronic transistor that forms the basis of modern electronics. In sharp contrast to previous all-optical tran-sistors which are all based on optical nonlinearities, here I introduce a novel design for a high-gain and high-speed (up to terahertz) photonic transistor and its counterpart in the quantum limit, i.e., single-photon transistor based on a linear optical effect: giant Faraday rotation induced by a single electronic spin in a single-sided optical microcavity. A single-photon or classical optical pulse as the gate sets the spin state via projective measurement and controls the polarization of a strong light to open/block the photonic channel. Due to the duality as quantum gate for quantum information processing and transistor for optical information processing, this versatile spin-cavity quantum transistor provides a solid-state platform ideal for all-optical networks and quantum networks.

  3. Ultra-Low Power Optical Transistor Using a Single Quantum Dot Embedded in a Photonic Wire

    DEFF Research Database (Denmark)

    Nguyen, H.A.; Grange, T.; Malik, N.S.

    2017-01-01

    Using a single InAs quantum dot embedded in a GaAs photonic wire, we realize a giant non-linearity between two optical modes to experimentally demonstrate an all-optical transistor triggered by 10 photons.......Using a single InAs quantum dot embedded in a GaAs photonic wire, we realize a giant non-linearity between two optical modes to experimentally demonstrate an all-optical transistor triggered by 10 photons....

  4. Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

    DEFF Research Database (Denmark)

    MacLeod, S. J.; See, A. M.; Keane, Z. K.

    2014-01-01

    Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these d......Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However...

  5. Simple and controlled single electron transistor based on doping modulation in silicon nanowires

    Science.gov (United States)

    Hofheinz, M.; Jehl, X.; Sanquer, M.; Molas, G.; Vinet, M.; Deleonibus, S.

    2006-10-01

    A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel of the transistor is the Coulomb island at low temperature. Two silicon nitride spacers deposited on each side of the gate create a modulation of doping along the nanowire that creates tunnel barriers. Such barriers are fixed and controlled, like in metallic SETs. The period of the Coulomb oscillations is set by the gate capacitance of the transistor and therefore controlled by lithography. The source and drain capacitances have also been characterized. This design could be used to build more complex SET devices.

  6. Continuous-Wave Single-Photon Transistor Based on a Superconducting Circuit

    DEFF Research Database (Denmark)

    Kyriienko, Oleksandr; Sørensen, Anders Søndberg

    2016-01-01

    We propose a microwave frequency single-photon transistor which can operate under continuous wave probing and represents an efficient single microwave photon detector. It can be realized using an impedance matched system of a three level artificial ladder-type atom coupled to two microwave cavities...... and the appearance of a photon flux leaving the second cavity through a separate input-output port. The proposal does not require time variation of the probe signals, thus corresponding to a passive version of a single-photon transistor. The resulting device is robust to qubit dephasing processes, possesses low dark...

  7. Ambipolar Cu- and Fe-phthalocyanine single-crystal field-effect transistors

    NARCIS (Netherlands)

    De Boer, R.W.I.; Stassen, A.F.; Craciun, M.F.; Mulder, C.L.; Molinari, A.; Rogge, S.; Morpurgo, A.F.

    2005-01-01

    We report the observation of ambipolar transport in field-effect transistors fabricated on single crystals of copper- and iron-phthalocyanine, using gold as a high work-function metal for the fabrication of source and drain electrodes. In these devices, the room-temperature mobility of holes reaches

  8. Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

    NARCIS (Netherlands)

    Naber, W.J.M.; Craciun, M.F.; Lemmens, J.H.J.; Arkenbout, A.H.; Palstra, T.T.M.; Morpurgo, A.F.; van der Wiel, Wilfred Gerard

    2010-01-01

    We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also

  9. Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

    NARCIS (Netherlands)

    Naber, W. J. M.; Craciun, M. F.; Lemmens, J. H. J.; Arkenbout, A. H.; Palstra, T. T. M.; Morpurgo, A. F.; van der Wiel, W. G.

    We report on single-crystal rubrene. eld-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al(2)O(3) tunnel barrier. Magnetic and electronic characterization shows that the Al(2)O(3) film not only protects the Co from undesired oxidation, but

  10. Ternary logic implemented on a single dopant atom field effect silicon transistor

    NARCIS (Netherlands)

    Klein, M.; Mol, J.A.; Verduijn, J.; Lansbergen, G.P.; Rogge, S.; Levine, R.D.; Remacle, F.

    2010-01-01

    We provide an experimental proof of principle for a ternary multiplier realized in terms of the charge state of a single dopant atom embedded in a fin field effect transistor (Fin-FET). Robust reading of the logic output is made possible by using two channels to measure the current flowing through

  11. Molecular electronics: the single molecule switch and transistor

    NARCIS (Netherlands)

    Sotthewes, Kai; Geskin, Victor; Heimbuch, Rene; Kumar, Avijit; Zandvliet, Henricus J.W.

    2014-01-01

    In order to design and realize single-molecule devices it is essential to have a good understanding of the properties of an individual molecule. For electronic applications, the most important property of a molecule is its conductance. Here we show how a single octanethiol molecule can be connected

  12. Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

    Energy Technology Data Exchange (ETDEWEB)

    Llobet, Jordi; Pérez-Murano, Francesc, E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Institut de Microelectrònica de Barcelona (IMB-CNM CSIC), Campus UAB, E-08193 Bellaterra, Catalonia (Spain); Krali, Emiljana; Wang, Chen; Jones, Mervyn E.; Durrani, Zahid A. K., E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ (United Kingdom); Arbiol, Jordi [Institució Catalana de Recerca i Estudis Avançats (ICREA) and Institut Català de Nanociència i Nanotecnologia (ICN2), Campus UAB, 08193 Bellaterra, Catalonia (Spain); CELLS-ALBA Synchrotron Light Facility, 08290 Cerdanyola, Catalonia (Spain)

    2015-11-30

    Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.

  13. Coulomb Blockade Anisotropic Magnetoresistance Effect in a (Ga,Mn)As Single-Electron Transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, J.; Jungwirth, Tomáš; Kaestner, B.; Irvine, A.C.; Shick, Alexander; Stone, N.; Wang, K. Y.; Rana, U.; Giddings, A.D.; Foxon, C. T.; Campion, R. P.; Williams, D.A.; Gallagher, B. L.

    2006-01-01

    Roč. 97, č. 7 (2006), 077201/1-077201/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/05/0575; GA MŠk LC510 Grant - others:EPSRC(GB) GR/S81407/01 Institutional research plan: CEZ:AV0Z10100521 Keywords : anisotropic magnetoresistance * Coulomb blockade * single electron transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.072, year: 2006

  14. Nanopore extended field-effect transistor for selective single-molecule biosensing.

    Science.gov (United States)

    Ren, Ren; Zhang, Yanjun; Nadappuram, Binoy Paulose; Akpinar, Bernice; Klenerman, David; Ivanov, Aleksandar P; Edel, Joshua B; Korchev, Yuri

    2017-09-19

    There has been a significant drive to deliver nanotechnological solutions to biosensing, yet there remains an unmet need in the development of biosensors that are affordable, integrated, fast, capable of multiplexed detection, and offer high selectivity for trace analyte detection in biological fluids. Herein, some of these challenges are addressed by designing a new class of nanoscale sensors dubbed nanopore extended field-effect transistor (nexFET) that combine the advantages of nanopore single-molecule sensing, field-effect transistors, and recognition chemistry. We report on a polypyrrole functionalized nexFET, with controllable gate voltage that can be used to switch on/off, and slow down single-molecule DNA transport through a nanopore. This strategy enables higher molecular throughput, enhanced signal-to-noise, and even heightened selectivity via functionalization with an embedded receptor. This is shown for selective sensing of an anti-insulin antibody in the presence of its IgG isotype.Efficient detection of single molecules is vital to many biosensing technologies, which require analytical platforms with high selectivity and sensitivity. Ren et al. combine a nanopore sensor and a field-effect transistor, whereby gate voltage mediates DNA and protein transport through the nanopore.

  15. Electrochemical Single-Molecule Transistors with Optimized Gate Coupling

    DEFF Research Database (Denmark)

    Osorio, Henrry M.; Catarelli, Samantha; Cea, Pilar

    2015-01-01

    . These data are rationalized in terms of a two-step electrochemical model for charge transport across the redox bridge. In this model the gate coupling in the ionic liquid is found to be fully effective with a modeled gate coupling parameter, ξ, of unity. This compares to a much lower gate coupling parameter......Electrochemical gating at the single molecule level of viologen molecular bridges in ionic liquids is examined. Contrary to previous data recorded in aqueous electrolytes, a clear and sharp peak in the single molecule conductance versus electrochemical potential data is obtained in ionic liquids...

  16. Manipulation of organic polyradicals in a single-molecule transistor

    NARCIS (Netherlands)

    Fock, J.; Leijnse, M.; Jennum, K.; Zyazin, A.S.; Paaske, J.; Hedegard, P.; Brondsted Nielsen, M.; Van der Zant, H.S.J.

    2012-01-01

    Inspired by cotunneling spectroscopy of spin-states in a single OPE5-based molecule, we investigate the prospects for electric control of magnetism in purely organic molecules contacted in a three-terminal geometry. Using the gate electrode, the molecule is reversibly switched between three

  17. Reconfigurable Boolean logic using magnetic single-electron transistors

    Czech Academy of Sciences Publication Activity Database

    Gonzalez-Zalba, M.F.; Ciccarelli, C.; Zarbo, Liviu; Irvine, A.C.; Campion, R.C.; Gallagher, B. L.; Jungwirth, Tomáš; Ferguson, A.J.; Wunderlich, Joerg

    2015-01-01

    Roč. 10, č. 4 (2015), e0125142 E-ISSN 1932-6203 R&D Projects: GA MŠk(CZ) LM2011026; GA ČR GB14-37427G EU Projects: European Commission(XE) 268066 - 0MSPIN Institutional support: RVO:68378271 Keywords : single-electron transitor * reconfigurable logic * ferromagnetic semiconductor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 3.057, year: 2015

  18. A Single Polyaniline Nanofiber Field Effect Transistor and Its Gas Sensing Mechanisms

    Science.gov (United States)

    Chen, Dajing; Lei, Sheng; Chen, Yuquan

    2011-01-01

    A single polyaniline nanofiber field effect transistor (FET) gas sensor fabricated by means of electrospinning was investigated to understand its sensing mechanisms and optimize its performance. We studied the morphology, field effect characteristics and gas sensitivity of conductive nanofibers. The fibers showed Schottky and Ohmic contacts based on different electrode materials. Higher applied gate voltage contributes to an increase in gas sensitivity. The nanofiber transistor showed a 7% reversible resistance change to 1 ppm NH3 with 10 V gate voltage. The FET characteristics of the sensor when exposed to different gas concentrations indicate that adsorption of NH3 molecules reduces the carrier mobility in the polyaniline nanofiber. As such, nanofiber-based sensors could be promising for environmental and industrial applications. PMID:22163969

  19. Single-Atom Transistor as a Precise Magnetic Field Sensor

    Science.gov (United States)

    Jachymski, Krzysztof; Wasak, Tomasz; Idziaszek, Zbigniew; Julienne, Paul S.; Negretti, Antonio; Calarco, Tommaso

    2018-01-01

    Feshbach resonances, which allow for tuning the interactions of ultracold atoms with an external magnetic field, have been widely used to control the properties of quantum gases. We propose a scheme for using scattering resonances as a probe for external fields, showing that by carefully tuning the parameters it is possible to reach a 10-5 G (or nT) level of precision with a single pair of atoms. We show that, for our collisional setup, it is possible to saturate the quantum precision bound with a simple measurement protocol.

  20. Spin-dependent quasiparticle transport in aluminum single-electron transistors.

    Science.gov (United States)

    Ferguson, A J; Andresen, S E; Brenner, R; Clark, R G

    2006-08-25

    We investigate the effect of Zeeman splitting on quasiparticle transport in normal-superconducting-normal (NSN) aluminum single-electron transistors (SETs). In the above-gap transport, the interplay of Coulomb blockade and Zeeman splitting leads to spin-dependence of the sequential tunneling. This creates regimes where either one or both spin species can tunnel onto or off the island. At lower biases, spin-dependence of the single quasiparticle state is studied, and operation of the device as a bipolar spin filter is suggested.

  1. Single-Molecule Transistor from Graphene Nanoelectrodes and Novel Functional Materials From Self-assembly

    Science.gov (United States)

    Xu, Qizhi

    This thesis introduces a new strategy to fabricate single molecular transistor by utilizing the covalent chemistry to reconnect the molecule with the electroburnt graphene nanogap. We studied the effect of coupling chemistry and molecular length on the efficiency of reconnection between the molecule and the graphene. With this technique, we are also able to observe the Coulomb Blockade phenomenon, which is a characteristics of single-electron transistors. The high yield and versatility of this approach augur well for creating a new generation of sensors, switches, and other functional devices using graphene contacts. This thesis also introduces a new type of organic single-crystal p-n heterojunction inspired from the ball-and-socket shape-complementarity between fullerene and contorted dibenzotetrathienocoronene (c-DBTTC). We studied the influence of temperature, pressure, and time on the self-assembly process of contorted dibenzotetrathienocoronene on the as-grown fullerene crystals. We also utilized fluorescence microscopy to investigate the charge transfer in this type of p-n heterojunction. Finally, this thesis introduces one-dimensional and two-dimensional programming in solid-state materials from superatom macrocycles. We find that the linkers that bridges the two superatoms determine the distance and electronic coupling between the two superatoms in the macrocycle, which in turn determines the way they self-assembled in the solid-state materials. The thesis is composed of four chapters. The first chapter introduces why we are in terested in molecular transistors and new functional materials, and what has been done so far. The second chapter described the approach we developed to assemble single molecule into circuits with graphene electrodes. The third chapter details the method to fabricate the organic single-crystal C60-DBTTC p-n heterojunction, which is of great importance to understand their charge transfer process. The last chapter introduced a new

  2. Probing the Quantum States of a Single Atom Transistor at Microwave Frequencies.

    Science.gov (United States)

    Tettamanzi, Giuseppe Carlo; Hile, Samuel James; House, Matthew Gregory; Fuechsle, Martin; Rogge, Sven; Simmons, Michelle Y

    2017-03-28

    The ability to apply gigahertz frequencies to control the quantum state of a single P atom is an essential requirement for the fast gate pulsing needed for qubit control in donor-based silicon quantum computation. Here, we demonstrate this with nanosecond accuracy in an all epitaxial single atom transistor by applying excitation signals at frequencies up to ≈13 GHz to heavily phosphorus-doped silicon leads. These measurements allow the differentiation between the excited states of the single atom and the density of states in the one-dimensional leads. Our pulse spectroscopy experiments confirm the presence of an excited state at an energy ≈9 meV, consistent with the first excited state of a single P donor in silicon. The relaxation rate of this first excited state to the ground state is estimated to be larger than 2.5 GHz, consistent with theoretical predictions. These results represent a systematic investigation of how an atomically precise single atom transistor device behaves under radio frequency excitations.

  3. Research Update: Molecular electronics: The single-molecule switch and transistor

    Directory of Open Access Journals (Sweden)

    Kai Sotthewes

    2014-01-01

    Full Text Available In order to design and realize single-molecule devices it is essential to have a good understanding of the properties of an individual molecule. For electronic applications, the most important property of a molecule is its conductance. Here we show how a single octanethiol molecule can be connected to macroscopic leads and how the transport properties of the molecule can be measured. Based on this knowledge we have realized two single-molecule devices: a molecular switch and a molecular transistor. The switch can be opened and closed at will by carefully adjusting the separation between the electrical contacts and the voltage drop across the contacts. This single-molecular switch operates in a broad temperature range from cryogenic temperatures all the way up to room temperature. Via mechanical gating, i.e., compressing or stretching of the octanethiol molecule, by varying the contact's interspace, we are able to systematically adjust the conductance of the electrode-octanethiol-electrode junction. This two-terminal single-molecule transistor is very robust, but the amplification factor is rather limited.

  4. Electrostatic melting in a single-molecule field-effect transistor with applications in genomic identification

    Science.gov (United States)

    Vernick, Sefi; Trocchia, Scott M.; Warren, Steven B.; Young, Erik F.; Bouilly, Delphine; Gonzalez, Ruben L.; Nuckolls, Colin; Shepard, Kenneth L.

    2017-05-01

    The study of biomolecular interactions at the single-molecule level holds great potential for both basic science and biotechnology applications. Single-molecule studies often rely on fluorescence-based reporting, with signal levels limited by photon emission from single optical reporters. The point-functionalized carbon nanotube transistor, known as the single-molecule field-effect transistor, is a bioelectronics alternative based on intrinsic molecular charge that offers significantly higher signal levels for detection. Such devices are effective for characterizing DNA hybridization kinetics and thermodynamics and enabling emerging applications in genomic identification. In this work, we show that hybridization kinetics can be directly controlled by electrostatic bias applied between the device and the surrounding electrolyte. We perform the first single-molecule experiments demonstrating the use of electrostatics to control molecular binding. Using bias as a proxy for temperature, we demonstrate the feasibility of detecting various concentrations of 20-nt target sequences from the Ebolavirus nucleoprotein gene in a constant-temperature environment.

  5. Impedance of the single-electron transistor at radio-frequencies

    International Nuclear Information System (INIS)

    Ciccarelli, C; Ferguson, A J

    2011-01-01

    We experimentally characterize the impedance of a single-electron transistor (SET) at an excitation frequency comparable to the electron tunnel rate. In contrast to usual radio-frequency-SET operations, the excitation signal is applied to the gate of the device. At zero source-drain bias, the SET displays both resistive (Sisyphus resistance) and reactive (tunnelling capacitance) components to its impedance. We study the bias dependence of the complex impedance, investigating its response as the electron tunnel rate becomes large with respect to the driving frequency. The experimental data are compared with values calculated from a master equation model.

  6. Impedance of the single-electron transistor at radio-frequencies

    Science.gov (United States)

    Ciccarelli, C.; Ferguson, A. J.

    2011-09-01

    We experimentally characterize the impedance of a single-electron transistor (SET) at an excitation frequency comparable to the electron tunnel rate. In contrast to usual radio-frequency-SET operations, the excitation signal is applied to the gate of the device. At zero source-drain bias, the SET displays both resistive (Sisyphus resistance) and reactive (tunnelling capacitance) components to its impedance. We study the bias dependence of the complex impedance, investigating its response as the electron tunnel rate becomes large with respect to the driving frequency. The experimental data are compared with values calculated from a master equation model.

  7. Impedance of the single-electron transistor at radio-frequencies

    Energy Technology Data Exchange (ETDEWEB)

    Ciccarelli, C; Ferguson, A J, E-mail: cc538@cam.ac.uk, E-mail: ajf1006@cam.ac.uk [Cavendish Laboratory, University of Cambridge, J J Thomson Avenue, Cambridge CB3 0HE (United Kingdom)

    2011-09-15

    We experimentally characterize the impedance of a single-electron transistor (SET) at an excitation frequency comparable to the electron tunnel rate. In contrast to usual radio-frequency-SET operations, the excitation signal is applied to the gate of the device. At zero source-drain bias, the SET displays both resistive (Sisyphus resistance) and reactive (tunnelling capacitance) components to its impedance. We study the bias dependence of the complex impedance, investigating its response as the electron tunnel rate becomes large with respect to the driving frequency. The experimental data are compared with values calculated from a master equation model.

  8. A graphene quantum dot with a single electron transistor as an integrated charge sensor

    Science.gov (United States)

    Wang, Lin-Jun; Cao, Gang; Tu, Tao; Li, Hai-Ou; Zhou, Cheng; Hao, Xiao-Jie; Su, Zhan; Guo, Guang-Can; Jiang, Hong-Wen; Guo, Guo-Ping

    2010-12-01

    A quantum dot (QD) with an integrated charge sensor is becoming a common architecture for a spin or charge based solid state qubit. To implement such a structure in graphene, we have fabricated a twin-dot structure in which the larger dot serves as a single electron transistor (SET) to read out the charge state of the nearby gate controlled small QD. A high SET sensitivity of 10-3e/√Hz allowed us to probe Coulomb charging as well as excited state spectra of the QD, even in the regime where the current through the QD is too small to be measured by conventional transport means.

  9. Design of a Negative Differential Resistance Circuit Element Using Single-Electron Transistors

    Science.gov (United States)

    Dixon, D. C.; Heij, C. P.; Hadley, P.; Mooij, J. E.

    1998-03-01

    Electronic circuit elements displaying negative differential resistance (NDR), such as tunnel diodes, have a wide variety of device applications, including oscillators, amplifiers, logic, and memory. We present a two-terminal device using two single-electron transistors (SET's) that demonstrates an NDR profile tuneable with gate voltages. If the capacitive coupling between the SET's is sufficiently larger than the junction capacitances, the device exhibits multiply-peaked NDR, allowing its use as a multi-valued digital element. We will also report recent experimental progress in measurements of such a device, fabricated using standard Al tunnel junctions, but with an additional overlap capacitor to allow the required inter-SET coupling.

  10. Fabrication of double-dot single-electron transistor in silicon nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Mingyu; Kaizawa, Takuya; Arita, Masashi [Graduate School of Information Science and Technology, Hokkaido Univ., Sapporo, 060-0814 (Japan); Fujiwara, Akira; Ono, Yukinori [NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, 243-0198 (Japan); Inokawa, Hiroshi [Research Institute of Electronics, Shizuoka Univ., 3-5-1, Johoku, Hamamatsu, 432-8011 (Japan); Choi, Jung-Bum [Physics and Research Institute of NanoScience and Technology, Chungbuk National Univ., Cheongju, Chungbuk 361-763 (Korea, Republic of); Takahashi, Yasuo, E-mail: y-taka@nano.ist.hokudai.ac.j [Graduate School of Information Science and Technology, Hokkaido Univ., Sapporo, 060-0814 (Japan)

    2010-01-01

    We propose a simple method for fabricating Si single-electron transistors (SET) with coupled dots by means of a pattern-dependent-oxidation (PADOX) method. The PADOX method is known to convert a small one-dimensional Si wire formed on a silicon-on-insulator (SOI) substrate into a SET automatically. We fabricated a double-dot Si SET when we oxidized specially designed Si nanowires formed on SOI substrates. We analyzed the measured electrical characteristics by fitting the measurement and simulation results and confirmed the double-dot formation and the position of the two dots in the Si wire.

  11. Ordinary and extraordinary Coulomb blockade magnetoresistance in (Ga,Mn)As single electron transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, J.; Jungwirth, Tomáš; Novák, Vít; Irvine, A.C.; Kaestner, B.; Shick, Alexander; Foxon, C. T.; Campion, R. P.; Williams, D.A.; Gallagher, B. L.

    2007-01-01

    Roč. 144, - (2007), s. 536-541 ISSN 0038-1098 R&D Projects: GA ČR GA202/05/0575; GA ČR GA202/04/1519; GA MŠk LC510; GA ČR GEFON/06/E001; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : ferromagnetic semiconductors * magnetoresistance * single-electron transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.535, year: 2007

  12. Microwave-induced co-tunneling in single electron tunneling transistors

    DEFF Research Database (Denmark)

    Ejrnaes, M.; Savolainen, M.; Manscher, M.

    2002-01-01

    on rubber bellows. Cross-talk was minimized by using individual coaxial lines between the sample and the room temperature electronics: The co-tunneling experiments were performed at zero DC bias current by measuring the voltage response to a very small amplitude 2 Hz current modulation with the gate voltage......The influence of microwaves on the co-tunneling in single electron tunneling transistors has been investigated as function of frequency and power in the temperature range from 150 to 500 mK. All 20 low frequency connections and the RF line were filtered, and the whole cryostat was suspended...

  13. Thickness-dependent electron mobility of single and few-layer MoS2 thin-film transistors

    Directory of Open Access Journals (Sweden)

    Ji Heon Kim

    2016-06-01

    Full Text Available We investigated the dependence of electron mobility on the thickness of MoS2 nanosheets by fabricating bottom-gate single and few-layer MoS2 thin-film transistors with SiO2 gate dielectrics and Au electrodes. All the fabricated MoS2 transistors showed on/off-current ratio of ∼107 and saturated output characteristics without high-k capping layers. As the MoS2 thickness increased from 1 to 6 layers, the field-effect mobility of the fabricated MoS2 transistors increased from ∼10 to ∼18 cm2V−1s−1. The increased subthreshold swing of the fabricated transistors with MoS2 thickness suggests that the increase of MoS2 mobility with thickness may be related to the dependence of the contact resistance and the dielectric constant of MoS2 layer on its thickness.

  14. Terahertz light-emitting graphene-channel transistor toward single-mode lasing

    Directory of Open Access Journals (Sweden)

    Yadav Deepika

    2018-03-01

    Full Text Available A distributed feedback dual-gate graphene-channel field-effect transistor (DFB-DG-GFET was fabricated as a current-injection terahertz (THz light-emitting laser transistor. We observed a broadband emission in a 1–7.6-THz range with a maximum radiation power of ~10 μW as well as a single-mode emission at 5.2 THz with a radiation power of ~0.1 μW both at 100 K when the carrier injection stays between the lower cutoff and upper cutoff threshold levels. The device also exhibited peculiar nonlinear threshold-like behavior with respect to the current-injection level. The LED-like broadband emission is interpreted as an amplified spontaneous THz emission being transcended to a single-mode lasing. Design constraints on waveguide structures for better THz photon field confinement with higher gain overlapping as well as DFB cavity structures with higher Q factors are also addressed towards intense, single-mode continuous wave THz lasing at room temperature.

  15. One-step formation of a single atomic-layer transistor by the selective fluorination of a graphene film.

    Science.gov (United States)

    Ho, Kuan-I; Liao, Jia-Hong; Huang, Chi-Hsien; Hsu, Chang-Lung; Zhang, Wenjing; Lu, Ang-Yu; Li, Lain-Jong; Lai, Chao-Sung; Su, Ching-Yuan

    2014-03-12

    In this study, the scalable and one-step fabrication of single atomic-layer transistors is demonstrated by the selective fluorination of graphene using a low-damage CF4 plasma treatment, where the generated F-radicals preferentially fluorinated the graphene at low temperature (semiconductor/insulator can be directly formed in a single layer of graphene using a one-step fluorination process by introducing a Au thin-film as a buffer layer. With this heterojunction structure, it would be possible to fabricate transistors in a single graphene film via a one-step fluorination process, in which pristine graphene, partial F-graphene, and highly F-graphene serve as the source/drain contacts, the channel, and the channel isolation in a transistor, respectively. The demonstrated graphene transistor exhibits an on-off ratio above 10, which is 3-fold higher than that of devices made from pristine graphene. This efficient transistor fabrication method produces electrical heterojunctions of graphene over a large area and with selective patterning, providing the potential for the integration of electronics down to the single atomic-layer scale. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. High-Precision Displacement Sensing of Monolithic Piezoelectric Disk Resonators Using a Single-Electron Transistor

    Science.gov (United States)

    Li, J.; Santos, J. T.; Sillanpää, M. A.

    2018-02-01

    A single-electron transistor (SET) can be used as an extremely sensitive charge detector. Mechanical displacements can be converted into charge, and hence, SETs can become sensitive detectors of mechanical oscillations. For studying small-energy oscillations, an important approach to realize the mechanical resonators is to use piezoelectric materials. Besides coupling to traditional electric circuitry, the strain-generated piezoelectric charge allows for measuring ultrasmall oscillations via SET detection. Here, we explore the usage of SETs to detect the shear-mode oscillations of a 6-mm-diameter quartz disk resonator with a resonance frequency around 9 MHz. We measure the mechanical oscillations using either a conventional DC SET, or use the SET as a homodyne or heterodyne mixer, or finally, as a radio-frequency single-electron transistor (RF-SET). The RF-SET readout is shown to be the most sensitive method, allowing us to measure mechanical displacement amplitudes below 10^{-13} m. We conclude that a detection based on a SET offers a potential to reach the sensitivity at the quantum limit of the mechanical vibrations.

  17. A radio-frequency single-electron transistor based on an InAs/InP heterostructure nanowire

    DEFF Research Database (Denmark)

    Nilsson, Henrik A.; Duty, Tim; Abay, Simon

    2008-01-01

    We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements...... on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from −0.5 to at least 1.8 V. The charge sensitivity was measured to 32 µerms Hz−1/2 at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just...

  18. Single-Molecule Electrochemical Transistor Utilizing a Nickel-Pyridyl Spinterface

    DEFF Research Database (Denmark)

    Brooke, Richard J.; Jin, Chengjun; Szumski, Doug S.

    2015-01-01

    Using a scanning tunnelling microscope break-junction technique, we produce 4,4′-bipyridine (44BP) single-molecule junctions with Ni and Au contacts. Electrochemical control is used to prevent Ni oxidation and to modulate the conductance of the devices via nonredox gating - the first time this has...... been shown using non-Au contacts. Remarkably the conductance and gain of the resulting Ni-44BP-Ni electrochemical transistors is significantly higher than analogous Au-based devices. Ab-initio calculations reveal that this behavior arises because charge transport is mediated by spin-polarized Ni d......-electrons, which hybridize strongly with molecular orbitals to form a "spinterface". Our results highlight the important role of the contact material for single-molecule devices and show that it can be varied to provide control of charge and spin transport....

  19. Spearhead Nanometric Field-Effect Transistor Sensors for Single-Cell Analysis

    Science.gov (United States)

    Córdoba, Ainara López; Ali, Tayyibah; Shevchuk, Andrew; Takahashi, Yasufumi; Novak, Pavel; Edwards, Christopher; Lab, Max; Gopal, Sahana; Chiappini, Ciro; Anand, Uma; Magnani, Luca; Coombes, R. Charles; Gorelik, Julia; Matsue, Tomokazu; Schuhmann, Wolfgang; Klenerman, David; Sviderskaya, Elena V.; Korchev, Yuri

    2016-01-01

    Nanometric field-effect-transistor (FET) sensors are made on the tip of spear-shaped dual carbon nanoelectrodes derived from carbon deposition inside double-barrel nanopipettes. The easy fabrication route allows deposition of semiconductors or conducting polymers to comprise the transistor channel. A channel from electrodeposited poly pyrrole (PPy) exhibits high sensitivity toward pH changes. This property is exploited by immobilizing hexokinase on PPy nano-FETs to give rise to a selective ATP biosensor. Extracellular pH and ATP gradients are key biochemical constituents in the microenvironment of living cells; we monitor their real-time changes in relation to cancer cells and cardiomyocytes. The highly localized detection is possible because of the high aspect ratio and the spear-like design of the nano-FET probes. The accurately positioned nano-FET sensors can detect concentration gradients in three-dimensional space, identify biochemical properties of a single living cell, and after cell membrane penetration perform intracellular measurements. PMID:26816294

  20. Current Analysis and Modeling of Fullerene Single-Electron Transistor at Room Temperature

    Science.gov (United States)

    Khadem Hosseini, Vahideh; Ahmadi, Mohammad Taghi; Afrang, Saeid; Ismail, Razali

    2017-07-01

    Single-electron transistors (SETs) are interesting electronic devices that have become key elements in modern nanoelectronic systems. SETs operate quickly because they use individual electrons, with the number transferred playing a key role in their switching behavior. However, rapid transmission of electrons can cause their accumulation at the island, affecting the I- V characteristic. Selection of fullerene as a nanoscale zero-dimensional material with high stability, and controllable size in the fabrication process, can overcome this charge accumulation issue and improve the reliability of SETs. Herein, the current in a fullerene SET is modeled and compared with experimental data for a silicon SET. Furthermore, a weaker Coulomb staircase and improved reliability are reported. Moreover, the applied gate voltage and fullerene diameter are found to be directly associated with the I- V curve, enabling the desired current to be achieved by controlling the fullerene diameter.

  1. Measurement of quantum noise in a single-electron transistor near the quantum limit

    Science.gov (United States)

    Xue, W. W.; Ji, Z.; Pan, Feng; Stettenheim, Joel; Blencowe, M. P.; Rimberg, A. J.

    2009-09-01

    Quantum measurement has challenged physicists for almost a century. Classically, there is no lower bound on the noise a measurement may add. Quantum mechanically, however, measuring a system necessarily perturbs it. When applied to electrical amplifiers, this means that improved sensitivity requires increased backaction that itself contributes noise. The result is a strict quantum limit on added amplifier noise. To approach this limit, a quantum-limited amplifier must possess an ideal balance between sensitivity and backaction; furthermore, its noise must dominate that of subsequent classical amplifiers. Here, we report the first complete and quantitative measurement of the quantum noise of a superconducting single-electron transistor (S-SET) near a double Cooper-pair resonance predicted to have the right combination of sensitivity and backaction. A simultaneous measurement of our S-SET's charge sensitivity indicates that it operates within a factor of 3.6 of the quantum limit, a fourfold improvement over the nearest comparable results.

  2. Random telegraph signals by alkanethiol-protected Au nanoparticles in chemically assembled single-electron transistors

    International Nuclear Information System (INIS)

    Kano, Shinya; Azuma, Yasuo; Tanaka, Daisuke; Sakamoto, Masanori; Teranishi, Toshiharu; Smith, Luke W.; Smith, Charles G.; Majima, Yutaka

    2013-01-01

    We have studied random telegraph signals (RTSs) in a chemically assembled single-electron transistor (SET) at temperatures as low as 300 mK. The RTSs in the chemically assembled SET were investigated by measuring the source–drain current, using a histogram of the RTS dwell time, and calculating the power spectrum density of the drain current–time characteristics. It was found that the dwell time of the RTS was dependent on the drain voltage of the SET, but was independent of the gate voltage. Considering the spatial structure of the chemically assembled SET, the origin of the RTS is attributed to the trapped charges on an alkanethiol-protected Au nanoparticle positioned near the SET. These results are important as they will help to realize stable chemically assembled SETs in practical applications

  3. Ultraclean individual suspended single-walled carbon nanotube field effect transistor

    Science.gov (United States)

    Liu, Siyu; Zhang, Jian; Nshimiyimana, Jean Pierre; Chi, Xiannian; Hu, Xiao; Wu, Pei; Liu, Jia; Wang, Gongtang; Sun, Lianfeng

    2018-04-01

    In this work, we report an effective technique of fabricating ultraclean individual suspended single-walled carbon nanotube (SWNT) transistors. The surface tension of molten silver is utilized to suspend an individual SWNT between a pair of Pd electrodes during annealing treatment. This approach avoids the usage and the residues of organic resist attached to SWNTs, resulting ultraclean SWNT devices. And the resistance per micrometer of suspended SWNTs is found to be smaller than that of non-suspended SWNTs, indicating the effect of the substrate on the electrical properties of SWNTs. The ON-state resistance (˜50 kΩ), mobility of 8600 cm2 V-1 s-1 and large on/off ratio (˜105) of semiconducting suspended SWNT devices indicate its advantages and potential applications.

  4. Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

    Science.gov (United States)

    Pud, S.; Gasparyan, F.; Petrychuk, M.; Li, J.; Offenhäusser, A.; Vitusevich, S. A.

    2014-06-01

    Liquid-gated silicon nanowire (NW) field effect transistors (FETs) are fabricated and their transport and dynamic properties are investigated experimentally and theoretically. Random telegraph signal (RTS) fluctuations were registered in the nanolength channel FETs and used for the experimental and theoretical analysis of transport properties. The drain current and the carrier interaction processes with a single trap are analyzed using a quantum-mechanical evaluation of carrier distribution in the channel and also a classical evaluation. Both approaches are applied to treat the experimental data and to define an appropriate solution for describing the drain current behavior influenced by single trap resulting in RTS fluctuations in the Si NW FETs. It is shown that quantization and tunneling effects explain the behavior of the electron capture time on the single trap. Based on the experimental data, parameters of the single trap were determined. The trap is located at a distance of about 2 nm from the interface Si/SiO2 and has a repulsive character. The theory of dynamic processes in liquid-gated Si NW FET put forward here is in good agreement with experimental observations of transport in the structures and highlights the importance of quantization in carrier distribution for analyzing dynamic processes in the nanostructures.

  5. Heuristic for Learning Common Emitter Amplification with Bipolar Transistors

    Science.gov (United States)

    Staffas, Kjell

    2017-01-01

    Mathematics in engineering education causes many thresholds in the courses because of the demand of abstract conceptualisation. Electronics depend heavily on more or less complex mathematics. Therefore the concepts of analogue electronics are hard to learn since a great deal of students struggle with the calculations and procedures needed. A…

  6. Low Temperature Characterization of PMOS-type Gate-all-around Silicon nanowire FETs as single-hole-transistors

    Science.gov (United States)

    Hong, B. H.; Hwang, S. W.; Lee, Y. Y.; Son, M. H.; Ahn, D.; Cho, K. H.; Yeo, K. H.; Kim, D.-W.; Jin, G. Y.; Park, D.

    2011-12-01

    We report the single hole tunneling characteristics observed from a PMOS-type gate-all-around silicon nanowire field-effect-transistor with the radius 5 nm and the length 44 nm. The total capacitance of the quantum dot obtained from the measured Coulomb oscillations and Coulomb diamonds matches with the ideal capacitance of the silicon cylinder. It suggests that the observed single hole tunneling is originated from the fabricated structure.

  7. Radio frequency single electron transistors: readout for a solid state quantum computer

    International Nuclear Information System (INIS)

    Buehler, T.M.; Reilly, D.J.; Starrett, R.P.; Brenner, R.; Hamilton, A.R.; Clark, R.G.; Court, N.A.; Dzurak, A.S.

    2002-01-01

    Full text: Quantum computers promise unprecedented computational power if they can be scaled to a large number of qubits. Essential to the operation of such a machine is readout: the determination of the final quantum state of the system. In the case of the silicon based solid state architecture proposed by Kane, readout is achieved by determining the direction of a single electron spin via the detection of a spin dependent tunneling event. This requires a highly sensitive electrometer that can detect the motion of a single electron in a timescale less than the spin relaxation time. The Radio Frequency Single Electron Transistor (RF-SET) is a device that possesses both the charge sensitivity (oq ∼ 10 -6 / √Hz), approaching the quantum limit) and fast response required to perform readout in such a system. Here we describe the fabrication and operation of transmission mode RF-SETs and discuss the application of these novel electrometers in the readout of a solid state quantum computer

  8. Strong suppression of shot noise in a feedback-controlled single-electron transistor

    Science.gov (United States)

    Wagner, Timo; Strasberg, Philipp; Bayer, Johannes C.; Rugeramigabo, Eddy P.; Brandes, Tobias; Haug, Rolf J.

    2017-03-01

    Feedback control of quantum mechanical systems is rapidly attracting attention not only due to fundamental questions about quantum measurements, but also because of its novel applications in many fields in physics. Quantum control has been studied intensively in quantum optics but progress has recently been made in the control of solid-state qubits as well. In quantum transport only a few active and passive feedback experiments have been realized on the level of single electrons, although theoretical proposals exist. Here we demonstrate the suppression of shot noise in a single-electron transistor using an exclusively electronic closed-loop feedback to monitor and adjust the counting statistics. With increasing feedback response we observe a stronger suppression and faster freezing of charge current fluctuations. Our technique is analogous to the generation of squeezed light with in-loop photodetection as used in quantum optics. Sub-Poisson single-electron sources will pave the way for high-precision measurements in quantum transport similar to optical or optomechanical equivalents.

  9. Electrical properties of single CuO nanowires for device fabrication: Diodes and field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Florica, Camelia; Costas, Andreea; Boni, Andra Georgia; Negrea, Raluca; Preda, Nicoleta, E-mail: nicol@infim.ro, E-mail: encu@infim.ro; Pintilie, Lucian; Enculescu, Ionut, E-mail: nicol@infim.ro, E-mail: encu@infim.ro [National Institute of Materials Physics, P.O. Box MG-7, Bucharest, Magurele 077125 (Romania); Ion, Lucian [Faculty of Physics, University of Bucharest, Atomistilor Street 103, Magurele, Ilfov 77125 (Romania)

    2015-06-01

    High aspect ratio CuO nanowires are synthesized by a simple and scalable method, thermal oxidation in air. The structural, morphological, optical, and electrical properties of the semiconducting nanowires were studied. Au-Ti/CuO nanowire and Pt/CuO nanowire electrical contacts were investigated. A dominant Schottky mechanism was evidenced in the Au-Ti/CuO nanowire junction and an ohmic behavior was observed for the Pt/CuO nanowire junction. The Pt/CuO nanowire/Pt structure allows the measurements of the intrinsic transport properties of the single CuO nanowires. It was found that an activation mechanism describes the behavior at higher temperatures, while a nearest neighbor hopping transport mechanism is characteristic at low temperatures. This was also confirmed by four-probe resistivity measurements on the single CuO nanowires. By changing the metal/semiconductor interface, devices such as Schottky diodes and field effect transistors based on single CuO p-type nanowire semiconductor channel are obtained. These devices are suitable for being used in various electronic circuits where their size related properties can be exploited.

  10. Single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure transistors.

    Science.gov (United States)

    Tang, Jianshi; Wang, Chiu-Yen; Xiu, Faxian; Hong, Augustin J; Chen, Shengyu; Wang, Minsheng; Zeng, Caifu; Yang, Hong-Jie; Tuan, Hsing-Yu; Tsai, Cho-Jen; Chen, Lih Juann; Wang, Kang L

    2010-12-17

    In this study, we report on the formation of a single-crystalline Ni(2)Ge/Ge/Ni(2)Ge nanowire heterostructure and its field effect characteristics by controlled reaction between a supercritical fluid-liquid-solid (SFLS) synthesized Ge nanowire and Ni metal contacts. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) studies reveal a wide temperature range to convert the Ge nanowire to single-crystalline Ni(2)Ge by a thermal diffusion process. The maximum current density of the fully germanide Ni(2)Ge nanowires exceeds 3.5 × 10(7) A cm(-2), and the resistivity is about 88 μΩ cm. The in situ reaction examined by TEM shows atomically sharp interfaces for the Ni(2)Ge/Ge/Ni(2)Ge heterostructure. The interface epitaxial relationships are determined to be [Formula: see text] and [Formula: see text]. Back-gate field effect transistors (FETs) were also fabricated using this low resistivity Ni(2)Ge as source/drain contacts. Electrical measurements show a good p-type FET behavior with an on/off ratio over 10(3) and a one order of magnitude improvement in hole mobility from that of SFLS-synthesized Ge nanowire.

  11. Low-Voltage Organic Single-Crystal Field-Effect Transistor with Steep Subthreshold Slope.

    Science.gov (United States)

    Yang, Fangxu; Sun, Lingjie; Han, Jiangli; Li, Baili; Yu, Xi; Zhang, Xiaotao; Ren, Xiaochen; Hu, Wenping

    2018-03-06

    Anodization is a promising technique to form high- k dielectrics for low-power organic field-effect transistor (OFET) applications. However, the surface quality of the dielectric, which is mainly inherited from the metal electrode, can be improved further than other fabrication techniques, such as sol-gel. In this study, we applied the template stripping method to fabricate a low-power single-crystalline OFET based on the anodized AlO x dielectric. We found that the template stripping method largely improves the surface roughness of the deposited Al and allows for the formation of a high-quality AlO x high- k dielectric by anodization. The ultraflat AlO x /SAM dielectric combined with a single-crystal 2,6-diphenylanthracene (DPA) semiconductor produced a nearly defect-free interface with a steep subthreshold swing (SS) of 66 mV/decade. The current device is a promising candidate for future ultralow-power applications. Other than metal deposition, template stripping could provide a general approach to improve thin-film quality for many other types of materials and processes.

  12. Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

    Science.gov (United States)

    Fujiwara, Akira; Nishiguchi, Katsuhiko; Ono, Yukinori

    2008-01-01

    Nanoampere single-electron pumping is presented at 20K using a single-electron ratchet comprising silicon nanowire metal-oxide-semiconductor field-effect transistors. The ratchet features an asymmetric potential with a pocket that captures single electrons from the source and ejects them to the drain. Directional single-electron transfer is achieved by applying one ac signal with the frequency up to 2.3GHz. We find anomalous shapes of current steps which can be ascribed to nonadiabatic electron capture.

  13. Tunneling field effect transistor technology

    CERN Document Server

    Chan, Mansun

    2016-01-01

    This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency. · Provides comprehensive reference to tunneling field effect transistors (TFETs); · Covers all aspects of TFETs, from device process to modeling and applications; · Enables design of power-efficient integrated circuits, with low power consumption TFETs.

  14. Experimental Observation of Quantum Confinement Effect in and Silicon Nanowire Field-Effect Transistors and Single-Electron/Hole Transistors Operating at Room Temperature

    Science.gov (United States)

    Suzuki, Ryota; Nozue, Motoki; Saraya, Takuya; Hiramoto, Toshiro

    2013-10-01

    The quantum confinement effect (QCE) in ultranarrow silicon nanowire channel field-effect transistors (FETs) as well as single-electron/hole transistors (SET/SHTs) operating at room temperature is intensively investigated for the optimization of device design and fabrication. By adopting a “shared channel” structure with the directions of and , a carrier-dependent QCE is systematically examined. It is found that nanowire pFETs exhibit a smaller threshold voltage (Vth) variability due to a weaker QCE, while nFETs and n/pFETs show comparable Vth variabilities coming from the QCE. It is also found that only SETs exhibit clear Coulomb oscillations in the case of the channel, suggesting the formation of higher tunnel barriers than SHTs. On the other hand, SHTs show undesirable multidot behavior in spite of their comparable QCEs for electrons and holes. It is concluded that -directed nanowire channel SETs and n/pFETs are suitable for the integration of CMOS and SETs.

  15. A radio frequency single-electron transistor based on an InAs/InP heterostructure nanowire.

    Science.gov (United States)

    Nilsson, Henrik A; Duty, Tim; Abay, Simon; Wilson, Chris; Wagner, Jakob B; Thelander, Claes; Delsing, Per; Samuelson, Lars

    2008-03-01

    We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from -0.5 to at least 1.8 V. The charge sensitivity was measured to 32 microe rms Hz(-1/2) at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 microe rms Hz(-1/2). At low frequencies this device showed a typical 1/f noise behavior, with a level extrapolated to 300 microe rms Hz(-1/2) at 10 Hz.

  16. Passivated graphene transistors fabricated on a millimeter-sized single-crystal graphene film prepared with chemical vapor deposition

    International Nuclear Information System (INIS)

    Lin, Meng-Yu; Lee, Si-Chen; Lin, Shih-Yen; Wang, Cheng-Hung; Chang, Shu-Wei

    2015-01-01

    In this work, we first investigate the effects of partial pressures and flow rates of precursors on the single-crystal graphene growth using chemical vapor depositions on copper foils. These factors are shown to be critical to the growth rate, seeding density and size of graphene single crystals. The prepared graphene films in millimeter sizes are then bubbling transferred to silicon-dioxide/silicon substrates for high-mobility graphene transistor fabrications. After high-temperature annealing and hexamethyldisilazane passivation, the water attachment is removed from the graphene channel. The elimination of uncontrolled doping and enhancement of carrier mobility accompanied by these procedures indicate that they are promising for fabrications of graphene transistors. (paper)

  17. Probing quantum Hall states with single-electron transistors at high magnetic fields

    Science.gov (United States)

    Gustafsson, Martin; Yankowitz, Matthew; Forsythe, Carlos; Zhu, Xiaoyang; Dean, Cory

    The sequence of fractional quantum Hall states in graphene is not yet fully understood, largely due to disorder-induced limitations of conventional transport studies. Measurements of magnetotransport in other 2D crystals are further complicated by the difficulties in making ohmic contact to the materials. On the other hand, bulk electronic compressibility can provide clear signatures of the integer and fractional quantum Hall effects, does not require ohmic contact, and can be localized to regions of low disorder. The single-electron transistor (SET) is a suitable tool for such experiments due to its small size and high charge sensitivity, which allow electric fields penetrating the 2D electron system to be detected locally and with high fidelity. Here we report studies of exfoliated 2D van der Waals materials fully encapsulated in flakes of hexagonal boron nitride. SETs are fabricated lithographically on top of the encapsulation, yielding a structure which lends itself to experiments at high electric and magnetic fields. We demonstrate the method on monolayer graphene, where we observe fractional quantum Hall states at all filling factors ν = n / 3 up to n = 17 and extract their associated energy gaps for magnetic fields up to 31 tesla.

  18. Solution-processed single-wall carbon nanotube transistor arrays for wearable display backplanes

    Directory of Open Access Journals (Sweden)

    Byeong-Cheol Kang

    2018-01-01

    Full Text Available In this paper, we demonstrate solution-processed single-wall carbon nanotube thin-film transistor (SWCNT-TFT arrays with polymeric gate dielectrics on the polymeric substrates for wearable display backplanes, which can be directly attached to the human body. The optimized SWCNT-TFTs without any buffer layer on flexible substrates exhibit a linear field-effect mobility of 1.5cm2/V-s and a threshold voltage of around 0V. The statistical plot of the key device metrics extracted from 35 SWCNT-TFTs which were fabricated in different batches at different times conclusively support that we successfully demonstrated high-performance solution-processed SWCNT-TFT arrays which demand excellent uniformity in the device performance. We also investigate the operational stability of wearable SWCNT-TFT arrays against an applied strain of up to 40%, which is the essential for a harsh degree of strain on human body. We believe that the demonstration of flexible SWCNT-TFT arrays which were fabricated by all solution-process except the deposition of metal electrodes at process temperature below 130oC can open up new routes for wearable display backplanes.

  19. Density-Functional Theory description of transport in the single-electron transistor

    Science.gov (United States)

    Zawadzki, Krissia; Oliveira, Luiz N.

    The Kondo effect governs the low-temperature transport properties of the single electron transistor (SET), a quantum dot bridging two electron gases. In the weak coupling limit, for odd dot occupation, the gate-potential profile of the conductance approaches a step, known as the Kondo plateau. The plateau and other SET properties being well understood on the basis of the Anderson model, more realistic (i. e., DFT) descriptions of the device are now desired. This poses a challenge, since the SET is strongly correlated. DFT computations that reproduce the conductance plateau have been reported, e. g., by, which rely on the exact functional provided by the Bethe-Ansatz solution for the Anderson model. Here, sticking to DFT tradition, we employ a functional derived from a homogeneous system: the parametrization of the Lieb-Wu solution for the Hubbard model due to. Our computations reproduce the plateau and yield other results in accurate agreement with the exact diagonalization of the Anderson Hamiltonian. The prospects for extensions to realistic descriptions of two-dimensional nanostructured devices will be discussed. Luiz N. Oliveira thanks CNPq (312658/2013-3) and Krissia Zawadzki thanks CNPq (140703/2014-4) for financial support.

  20. Solution-processed zinc oxide nanoparticles/single-walled carbon nanotubes hybrid thin-film transistors

    Science.gov (United States)

    Liu, Fangmei; Sun, Jia; Qian, Chuan; Hu, Xiaotao; Wu, Han; Huang, Yulan; Yang, Junliang

    2016-09-01

    Solution-processed thin-film transistors (TFTs) are the essential building blocks for manufacturing the low-cost and large-area consumptive electronics. Herein, solution-processed TFTs based on the composites of zinc oxide (ZnO) nanoparticles and single-walled carbon nanotubes (SWCNTs) were fabricated by the methods of spin-coating and doctor-blading. Through controlling the weight of SWCNTs, the ZnO/SWCNTs TFTs fabricated by spin-coating demonstrated a field-effect mobility of 4.7 cm2/Vs and a low threshold voltage of 0.8 V, while the TFTs devices fabricated by doctor-blading technique showed reasonable electrical performance with a mobility of 0.22 cm2/Vs. Furthermore, the ion-gel was used as an efficient electrochemical gate dielectric because of its large electric double-layer capacitance. The operating voltage of all the TFTs devices is as low as 4.0 V. The research suggests that ZnO/SWCNTs TFTs have the potential applications in low-cost, large-area and flexible consumptive electronics, such as chemical-biological sensors and smart label.

  1. Solution-processed single-wall carbon nanotube transistor arrays for wearable display backplanes

    Science.gov (United States)

    Kang, Byeong-Cheol; Ha, Tae-Jun

    2018-01-01

    In this paper, we demonstrate solution-processed single-wall carbon nanotube thin-film transistor (SWCNT-TFT) arrays with polymeric gate dielectrics on the polymeric substrates for wearable display backplanes, which can be directly attached to the human body. The optimized SWCNT-TFTs without any buffer layer on flexible substrates exhibit a linear field-effect mobility of 1.5cm2/V-s and a threshold voltage of around 0V. The statistical plot of the key device metrics extracted from 35 SWCNT-TFTs which were fabricated in different batches at different times conclusively support that we successfully demonstrated high-performance solution-processed SWCNT-TFT arrays which demand excellent uniformity in the device performance. We also investigate the operational stability of wearable SWCNT-TFT arrays against an applied strain of up to 40%, which is the essential for a harsh degree of strain on human body. We believe that the demonstration of flexible SWCNT-TFT arrays which were fabricated by all solution-process except the deposition of metal electrodes at process temperature below 130oC can open up new routes for wearable display backplanes.

  2. Neural learning circuits utilizing nano-crystalline silicon transistors and memristors.

    Science.gov (United States)

    Cantley, Kurtis D; Subramaniam, Anand; Stiegler, Harvey J; Chapman, Richard A; Vogel, Eric M

    2012-04-01

    Properties of neural circuits are demonstrated via SPICE simulations and their applications are discussed. The neuron and synapse subcircuits include ambipolar nano-crystalline silicon transistor and memristor device models based on measured data. Neuron circuit characteristics and the Hebbian synaptic learning rule are shown to be similar to biology. Changes in the average firing rate learning rule depending on various circuit parameters are also presented. The subcircuits are then connected into larger neural networks that demonstrate fundamental properties including associative learning and pulse coincidence detection. Learned extraction of a fundamental frequency component from noisy inputs is demonstrated. It is then shown that if the fundamental sinusoid of one neuron input is out of phase with the rest, its synaptic connection changes differently than the others. Such behavior indicates that the system can learn to detect which signals are important in the general population, and that there is a spike-timing-dependent component of the learning mechanism. Finally, future circuit design and considerations are discussed, including requirements for the memristive device.

  3. All-Printed Thin-Film Transistor Based on Purified Single-Walled Carbon Nanotubes with Linear Response

    Directory of Open Access Journals (Sweden)

    Guiru Gu

    2011-01-01

    Full Text Available We report an all-printed thin-film transistor (TFT on a polyimide substrate with linear transconductance response. The TFT is based on our purified single-walled carbon nanotube (SWCNT solution that is primarily consists of semiconducting carbon nanotubes (CNTs with low metal impurities. The all-printed TFT exhibits a high ON/OFF ratio of around 103 and bias-independent transconductance over a certain gate bias range. Such bias-independent transconductance property is different from that of conventional metal-oxide-semiconductor field-effect transistors (MOSFETs due to the special band structure and the one-dimensional (1D quantum confined density of state (DOS of CNTs. The bias-independent transconductance promises modulation linearity for analog electronics.

  4. Correlation between crystal structure and mobility in organic field-effect transistors based on single crystals of tetrathiafulvalene derivatives.

    Science.gov (United States)

    Mas-Torrent, Marta; Hadley, Peter; Bromley, Stefan T; Ribas, Xavi; Tarrés, Judit; Mas, Montserrat; Molins, Elies; Veciana, Jaume; Rovira, Concepció

    2004-07-14

    Recently, it was reported that crystals of the organic material dithiophene-tetrathiafulvalene (DT-TTF) have a high field-effect charge carrier mobility of 1.4 cm(2)/(V x s). These crystals were formed by a simple drop-casting method, making this material interesting to investigate for possible applications in low-cost electronics. Here, organic single-crystal field-effect transistors based on materials related to DT-TTF are presented and a clear correlation between the crystal structure and the electrical characteristics is observed. The observed relationship between the mobilities in the different crystal structures is strongly corroborated by calculations of both the molecular reorganization energies and the maximum intermolecular transfer integrals. The most suitable materials described here exhibit mobilities that are among the highest reported for organic field-effect transistors and that are the highest reported for solution-processed materials.

  5. Hysteresis in single-layer MoS2 field effect transistors.

    Science.gov (United States)

    Late, Dattatray J; Liu, Bin; Matte, H S S Ramakrishna; Dravid, Vinayak P; Rao, C N R

    2012-06-26

    Field effect transistors using ultrathin molybdenum disulfide (MoS(2)) have recently been experimentally demonstrated, which show promising potential for advanced electronics. However, large variations like hysteresis, presumably due to extrinsic/environmental effects, are often observed in MoS(2) devices measured under ambient environment. Here, we report the origin of their hysteretic and transient behaviors and suggest that hysteresis of MoS(2) field effect transistors is largely due to absorption of moisture on the surface and intensified by high photosensitivity of MoS(2). Uniform encapsulation of MoS(2) transistor structures with silicon nitride grown by plasma-enhanced chemical vapor deposition is effective in minimizing the hysteresis, while the device mobility is improved by over 1 order of magnitude.

  6. Electro-oxidized epitaxial graphene channel field-effect transistors with single-walled carbon nanotube thin film gate electrode.

    Science.gov (United States)

    Ramesh, Palanisamy; Itkis, Mikhail E; Bekyarova, Elena; Wang, Feihu; Niyogi, Sandip; Chi, Xiaoliu; Berger, Claire; de Heer, Walt; Haddon, Robert C

    2010-10-20

    We report the effect of electrochemical oxidation in nitric acid on the electronic properties of epitaxial graphene (EG) grown on silicon carbide substrates; we demonstrate the availability of an additional reaction channel in EG, which is not present in graphite but which facilitates the introduction of the reaction medium into the graphene galleries during electro-oxidation. The device performance of the chemically processed graphene was studied by patterning the EG wafers with two geometrically identical macroscopic channels; the electro-oxidized channel showed a logarithmic increase of resistance with decreasing temperature, which is ascribed to the scattering of charge carriers in a two-dimensional electronic gas, rather than the presence of an energy gap at the Fermi level. Field-effect transistors were fabricated on the electro-oxidized and pristine graphene channels using single-walled carbon nanotube thin film top gate electrodes, thereby allowing the study of the effect of oxidative chemistry on the transistor performance of EG. The electro-oxidized channel showed higher values for the on-off ratio and the mobility of the graphene field-effect transistor, which we ascribe to the availability of high-quality internal graphene layers after electro-oxidation of the more defective top layers. Thus, the present oxidative process provides a clear contrast with previously demonstrated covalent chemistry in which sp(3) hybridized carbon atoms are introduced into the graphitic transport layer of the lattice by carbon-carbon bond formation, thereby opening an energy gap.

  7. High-performance partially aligned semiconductive single-walled carbon nanotube transistors achieved with a parallel technique.

    Science.gov (United States)

    Wang, Yilei; Pillai, Suresh Kumar Raman; Chan-Park, Mary B

    2013-09-09

    Single-walled carbon nanotubes (SWNTs) are widely thought to be a strong contender for next-generation printed electronic transistor materials. However, large-scale solution-based parallel assembly of SWNTs to obtain high-performance transistor devices is challenging. SWNTs have anisotropic properties and, although partial alignment of the nanotubes has been theoretically predicted to achieve optimum transistor device performance, thus far no parallel solution-based technique can achieve this. Herein a novel solution-based technique, the immersion-cum-shake method, is reported to achieve partially aligned SWNT networks using semiconductive (99% enriched) SWNTs (s-SWNTs). By immersing an aminosilane-treated wafer into a solution of nanotubes placed on a rotary shaker, the repetitive flow of the nanotube solution over the wafer surface during the deposition process orients the nanotubes toward the fluid flow direction. By adjusting the nanotube concentration in the solution, the nanotube density of the partially aligned network can be controlled; linear densities ranging from 5 to 45 SWNTs/μm are observed. Through control of the linear SWNT density and channel length, the optimum SWNT-based field-effect transistor devices achieve outstanding performance metrics (with an on/off ratio of ~3.2 × 10(4) and mobility 46.5 cm(2) /Vs). Atomic force microscopy shows that the partial alignment is uniform over an area of 20 × 20 mm(2) and confirms that the orientation of the nanotubes is mostly along the fluid flow direction, with a narrow orientation scatter characterized by a full width at half maximum (FWHM) of parallel process is large-scale applicable and exploits the anisotropic properties of the SWNTs, presenting a viable path forward for industrial adoption of SWNTs in printed, flexible, and large-area electronics. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. The effects of changing the electrodes temperature on the tunnel magnetoresistance in the ferromagnetic single electron transistor

    Science.gov (United States)

    Ahmadi, N.; Pourali, N.; Kavaz, E.

    2018-01-01

    Ferromagnetic single electron transistor with electrodes having different temperatures is investigated and the effects of changing electrodes temperature on TMR of system are studied. A modified orthodox theory is used to study the system and to calculate the electron tunneling transition rate. The results show that the temperature of electrodes can be an effective tool to control and tune the tunnel magnetoresistance of FM-SET. Also, the effects of parameters such as resistance ratio of junctions, magnetic polarization and spin relaxation time on the behaviour of the system are studied.

  9. X-ray Nanodiffraction on a Single SiGe Quantum Dot inside a Functioning Field-Effect Transistor

    Science.gov (United States)

    2011-01-01

    For advanced electronic, optoelectronic, or mechanical nanoscale devices a detailed understanding of their structural properties and in particular the strain state within their active region is of utmost importance. We demonstrate that X-ray nanodiffraction represents an excellent tool to investigate the internal structure of such devices in a nondestructive way by using a focused synchotron X-ray beam with a diameter of 400 nm. We show results on the strain fields in and around a single SiGe island, which serves as stressor for the Si-channel in a fully functioning Si–metal–oxide semiconductor field-effect transistor. PMID:21627099

  10. Enrichment of semiconducting single-walled carbon nanotubes by carbothermic reaction for use in all-nanotube field effect transistors.

    Science.gov (United States)

    Li, Shisheng; Liu, Chang; Hou, Peng-Xiang; Sun, Dong-Ming; Cheng, Hui-Ming

    2012-11-27

    Selective removal of metallic single-walled carbon nanotubes (SWCNTs) and consequent enrichment of semiconducting SWCNTs were achieved through an efficient carbothermic reaction with a NiO thin film at a relatively low temperature of 350 °C. All-SWCNT field effect transistors (FETs) were fabricated with the aid of a patterned NiO mask, in which the as-grown SWCNTs behaving as source/drain electrodes and the remaining semiconducting SWCNTs that survive in the carbothermic reaction as a channel material. The all-SWCNT FETs demonstrate improved current ON/OFF ratios of ∼10(3).

  11. Tunneling spectroscopy of a germanium quantum dot in single-hole transistors with self-aligned electrodes

    International Nuclear Information System (INIS)

    Chen, G-L; Kuo, David M T; Lai, W-T; Li, P-W

    2007-01-01

    We have fabricated a Ge quantum dot (QD) (∼10 nm) single-hole transistor with self-aligned electrodes using thermal oxidation of a SiGe-on-insulator nanowire based on FinFET technology. This fabricated device exhibits clear Coulomb blockade oscillations with large peak-to-valley ratio (PVCR) of 250-750 and negative differential conductance with PVCR of ∼12 at room temperature. This reveals that the gate-induced tunneling barrier lowering is effectively suppressed due to the self-aligned electrode structure. The magnitude of tunneling current spectra also reveals the coupling strengths between the energy levels of the Ge QD and electrodes

  12. Coulomb blockade anisotropic magnetoresistance and voltage controlled magnetic switching in a ferromagnetic GaMnAs single electron transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, J.; Jungwirth, Tomáš; Irvine, A.C.; Kaestner, B.; Shick, Alexander; Campion, R. P.; Williams, D.A.; Gallagher, B. L.

    2007-01-01

    Roč. 310, - (2007), s. 1883-1888 ISSN 0304-8853 R&D Projects: GA ČR GA202/05/0575; GA MŠk LC510; GA ČR GEFON/06/E002 EU Projects: European Commission(XE) 015728 - NANOSPIN Institutional research plan: CEZ:AV0Z10100521; CEZ:AV0Z10100520 Keywords : ferromagnetic semiconductors * magnetoresistance * single-electron transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 1.704, year: 2007

  13. In Silico Modeling of Indigo and Tyrian Purple Single-Electron Nano-Transistors Using Density Functional Theory Approach

    Science.gov (United States)

    Shityakov, Sergey; Roewer, Norbert; Förster, Carola; Broscheit, Jens-Albert

    2017-07-01

    The purpose of this study was to develop and implement an in silico model of indigoid-based single-electron transistor (SET) nanodevices, which consist of indigoid molecules from natural dye weakly coupled to gold electrodes that function in a Coulomb blockade regime. The electronic properties of the indigoid molecules were investigated using the optimized density-functional theory (DFT) with a continuum model. Higher electron transport characteristics were determined for Tyrian purple, consistent with experimentally derived data. Overall, these results can be used to correctly predict and emphasize the electron transport functions of organic SETs, demonstrating their potential for sustainable nanoelectronics comprising the biodegradable and biocompatible materials.

  14. A 2-transistor/1-resistor artificial synapse capable of communication and stochastic learning in neuromorphic systems.

    Science.gov (United States)

    Wang, Zhongqiang; Ambrogio, Stefano; Balatti, Simone; Ielmini, Daniele

    2014-01-01

    Resistive (or memristive) switching devices based on metal oxides find applications in memory, logic and neuromorphic computing systems. Their small area, low power operation, and high functionality meet the challenges of brain-inspired computing aiming at achieving a huge density of active connections (synapses) with low operation power. This work presents a new artificial synapse scheme, consisting of a memristive switch connected to 2 transistors responsible for gating the communication and learning operations. Spike timing dependent plasticity (STDP) is achieved through appropriate shaping of the pre-synaptic and the post synaptic spikes. Experiments with integrated artificial synapses demonstrate STDP with stochastic behavior due to (i) the natural variability of set/reset processes in the nanoscale switch, and (ii) the different response of the switch to a given stimulus depending on the initial state. Experimental results are confirmed by model-based simulations of the memristive switching. Finally, system-level simulations of a 2-layer neural network and a simplified STDP model show random learning and recognition of patterns.

  15. Modeling and the analysis of control logic for a digital PWM controller based on a nano electronic single electron transistor

    Directory of Open Access Journals (Sweden)

    Rathnakannan Kailasam

    2008-01-01

    Full Text Available This paper describes the modelling and the analysis of control logic for a Nano-Device- based PWM controller. A comprehensive simple SPICE schematic model for Single Electron transistor has been proposed. The operation of basic Single Electron Transistor logic gates and SET flip flops were successfully designed and their performances analyzed. The proposed design for realizing the logic gates and flip-flops is used in constructing the PWM controller utilized for switching the buck converter circuit. The output of the converter circuit is compared with reference voltage, and when the error voltage and the reference are matched the latch is reset so as to generate the PWM signal. Due to the simplicity and accuracy of the compact model, the simulation time and speed are much faster, which makes it potentially applicable in large-scale circuit simulation. This study confirms that the SET-based PWM controller is small in size, consumes ultra low power and operates at high speeds without compromising any performance. In addition these devices are capable of measuring charges of extremely high sensitivity.

  16. Fabrication and Characterization of a Single Hole Transistor in p-type GaAs/AlGaAs Heterostructures

    Energy Technology Data Exchange (ETDEWEB)

    Tracy, Lisa A [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Reno, John L. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Hargett, Terry W. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

    2015-09-01

    Most spin qubit research to date has focused on manipulating single electron spins in quantum dots. However, hole spins are predicted to have some advantages over electron spins, such as reduced coupling to host semiconductor nuclear spins and the ability to control hole spins electrically using the large spin-orbit interaction. Building on recent advances in fabricating high-mobility 2D hole systems in GaAs/AlGaAs heterostructures at Sandia, we fabricate and characterize single hole transistors in GaAs. We demonstrate p-type double quantum dot devices with few-hole occupation, which could be used to study the physics of individual hole spins and control over coupling between hole spins, looking towards eventual applications in quantum computing. Intentionally left blank

  17. Polarization-Dependent Photoinduced Bias-Stress Effect in Single-Crystal Organic Field-Effect Transistors.

    Science.gov (United States)

    Choi, Hyun Ho; Najafov, Hikmet; Kharlamov, Nikolai; Kuznetsov, Denis V; Didenko, Sergei I; Cho, Kilwon; Briseno, Alejandro L; Podzorov, Vitaly

    2017-10-04

    Photoinduced charge transfer between semiconductors and gate dielectrics can occur in organic field-effect transistors (OFETs) operating under illumination, leading to a pronounced bias-stress effect in devices that are normally stable while operating in the dark. Here, we report an observation of a polarization-dependent photoinduced bias-stress effect in two prototypical single-crystal OFETs, based on rubrene and tetraphenylbis(indolo{1,2-a})quinolin. We find that the decay rate of the source-drain current in these OFETs under illumination is a periodic function of the polarization angle of incident photoexcitation with respect to the crystal axes, with a periodicity of π. The angular positions of maxima and minima of the bias-stress rate match those of the optical absorption coefficient of the corresponding crystals. The analysis of the effect shows that it stems from a charge transfer of "hot" holes, photogenerated in the crystal within a very short thermalization length (≪μm) from the semiconductor-dielectric interface. The observed phenomenon is a type of intrinsic structure-property relationship, revealing how molecular packing affects parameter drift in organic transistors under illumination. We also demonstrate that a photoinduced charge transfer in OFETs can be used for recording rewritable accumulation channels with an optically defined geometry and resolution, which can be used in a number of potential applications.

  18. Experimental synchronization of chaos in a large ring of mutually coupled single-transistor oscillators: Phase, amplitude, and clustering effects

    Science.gov (United States)

    Minati, Ludovico

    2014-12-01

    In this paper, experimental evidence of multiple synchronization phenomena in a large (n = 30) ring of chaotic oscillators is presented. Each node consists of an elementary circuit, generating spikes of irregular amplitude and comprising one bipolar junction transistor, one capacitor, two inductors, and one biasing resistor. The nodes are mutually coupled to their neighbours via additional variable resistors. As coupling resistance is decreased, phase synchronization followed by complete synchronization is observed, and onset of synchronization is associated with partial synchronization, i.e., emergence of communities (clusters). While component tolerances affect community structure, the general synchronization properties are maintained across three prototypes and in numerical simulations. The clusters are destroyed by adding long distance connections with distant notes, but are otherwise relatively stable with respect to structural connectivity changes. The study provides evidence that several fundamental synchronization phenomena can be reliably observed in a network of elementary single-transistor oscillators, demonstrating their generative potential and opening way to potential applications of this undemanding setup in experimental modelling of the relationship between network structure, synchronization, and dynamical properties.

  19. Heterostructured semiconductor single-walled carbon nanotube films for solution-processed high-performance field-effect transistors

    Science.gov (United States)

    Park, Noh-Hwal; Lee, Seung-Hoon; Jeong, Seung-Hyeon; Khim, Dongyoon; Kim, Yun Ho; Yoo, Sungmi; Noh, Yong-Young; Kim, Jang-Joo

    2018-03-01

    In this paper, we report a simple and effective method to simultaneously achieve a high charge-carrier mobility and low off current in conjugated polymer-wrapped semiconducting single-walled carbon nanotube (s-SWNT) transistors by applying a SWNT bilayer. To achieve the high mobility and low off current, highly purified and less purified s-SWNTs are successively coated to form the semiconducting layer consisting of poly (3-dodecylthiophene-2,5-diyl) (P3DDT)-wrapped high-pressure carbon mono oxide (HiPCO) SWNT (P3DDT-HiPCO) and poly (9, 9-di-n-dodecylfluorene) (PFDD)-wrapped plasma discharge (PD) SWNT (PFDD-PD). The SWNT transistors with bilayer SWNT networked film showed highly improved hole field-effect mobility (6.18 ± 0.85 cm2V-1s-1 average), on/off current ratio (107), and off current (˜1 pA). Thus, the combination of less purified PFDD-PD (98%-99%) charge-injection layer and highly purified s-P3DDT-HiPCO (>99%) charge-transport layer as the bi-layered semiconducting film achieved high mobility and low off current simultaneously.

  20. Growth of segmented gold nanorods with nanogaps by the electrochemical wet etching technique for single-electron transistor applications

    Science.gov (United States)

    Hoang, Nguyen Van; Kumar, Sanjeev; Kim, Gil-Ho

    2009-03-01

    The growth of multisegment nanorods comprising gold (Au) and sacrificial silver (Ag) segments (Au-Ag-Au or Au-Ag-Au-Ag-Au) using the electrochemical wet etching method is reported. The nanorods were fabricated using an alumina template of thickness 100 µm and pore size of 200 nm. A variety of nanorods from single to seven segments comprising alternate Au and Ag segments were fabricated with better control of growth rate. The multisegment nanorods were selectively etched by removing the Ag segments to create gaps in the fabricated nanorods. A careful investigation led to the creation of a wide variety of nanogaps in the fabricated multisegment nanorods. The size of the nanogap was controlled by the passage of current through the electrochemical process, and size below 10 nm was achievable at exchanged charges of ~1 mC. A further lowering in the size of nanogaps was achieved by diluting the silver plating solution and a segmented nanorod with nanogap (Au-nanogap-Au) of 3.8 nm at exchanged charges of 0.2 mC was successfully created. In addition, segmented nanorods with two or more nanogaps (Au-nanogap-Au-nanogap-Ag) placed symmetrically and asymmetrically on either side of the central Au segments were also created. A prototype of a single-electron transistor device based on segmented nanorods with two nanogaps is proposed. The results obtained could form the basis for the realization of quantum tunneling devices where the barrier thickness is very critical and demands values less than 5 nm. The encouraging results show the promise of multisegment nanorods for fabricating devices working at the de Broglie wavelength such as single-electron transistors.

  1. Colloidal Quantum Dot Inks for Single-Step-Fabricated Field-Effect Transistors: The Importance of Postdeposition Ligand Removal.

    Science.gov (United States)

    Balazs, Daniel M; Rizkia, Nisrina; Fang, Hong-Hua; Dirin, Dmitry N; Momand, Jamo; Kooi, Bart J; Kovalenko, Maksym V; Loi, Maria Antonietta

    2018-02-14

    Colloidal quantum dots are a class of solution-processed semiconductors with good prospects for photovoltaic and optoelectronic applications. Removal of the surfactant, so-called ligand exchange, is a crucial step in making the solid films conductive, but performing it in solid state introduces surface defects and cracks in the films. Hence, the formation of thick, device-grade films have only been possible through layer-by-layer processing, limiting the technological interest for quantum dot solids. Solution-phase ligand exchange before the deposition allows for the direct deposition of thick, homogeneous films suitable for device applications. In this work, fabrication of field-effect transistors in a single step is reported using blade-coating, an upscalable, industrially relevant technique. Most importantly, a postdeposition washing step results in device properties comparable to the best layer-by-layer processed devices, opening the way for large-scale fabrication and further interest from the research community.

  2. Single photon sources in 4H-SiC metal-oxide-semiconductor field-effect transistors

    Science.gov (United States)

    Abe, Y.; Umeda, T.; Okamoto, M.; Kosugi, R.; Harada, S.; Haruyama, M.; Kada, W.; Hanaizumi, O.; Onoda, S.; Ohshima, T.

    2018-01-01

    We present single photon sources (SPSs) embedded in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). They are formed in the SiC/SiO2 interface regions of wet-oxidation C-face 4H-SiC MOSFETs and were not found in other C-face and Si-face MOSFETs. Their bright room-temperature photoluminescence (PL) was observed in the range from 550 to 750 nm and revealed variable multi-peak structures as well as variable peak shifts. We characterized a wide variety of their PL spectra as the inevitable variation of local atomic structures at the interface. Their polarization dependence indicates that they are formed at the SiC side of the interface. We also demonstrate that it is possible to switch on/off the SPSs by a bias voltage of the MOSFET.

  3. Fabrication of metallic single electron transistors featuring plasma enhanced atomic layer deposition of tunnel barriers

    Science.gov (United States)

    Karbasian, Golnaz

    The continuing increase of the device density in integrated circuits (ICs) gives rise to the high level of power that is dissipated per unit area and consequently a high temperature in the circuits. Since temperature affects the performance and reliability of the circuits, minimization of the energy consumption in logic devices is now the center of attention. According to the International Technology Roadmaps for Semiconductors (ITRS), single electron transistors (SETs) hold the promise of achieving the lowest power of any known logic device, as low as 1x10-18 J per switching event. Moreover, SETs are the most sensitive electrometers to date, and are capable of detecting a fraction of an electron charge. Despite their low power consumption and high sensitivity for charge detection, room temperature operation of these devices is quite challenging mainly due to lithographical constraints in fabricating structures with the required dimensions of less than 10 nm. Silicon based SETs have been reported to operate at room temperature. However, they all suffer from significant variation in batch-to-batch performance, low fabrication yield, and temperature-dependent tunnel barrier height. In this project, we explored the fabrication of SETs featuring metal-insulator-metal (MIM) tunnel junctions. While Si-based SETs suffer from undesirable effect of dopants that result in irregularities in the device behavior, in metal-based SETs the device components (tunnel barrier, island, and the leads) are well-defined. Therefore, metal SETs are potentially more predictable in behavior, making them easier to incorporate into circuits, and easier to check against theoretical models. Here, the proposed fabrication method takes advantage of unique properties of chemical mechanical polishing (CMP) and plasma enhanced atomic layer deposition (PEALD). Chemical mechanical polishing provides a path for tuning the dimensions of the tunnel junctions, surpassing the limits imposed by electron beam

  4. Changes in electrical properties of MOS transistor induced by single 14 MeV neutron

    International Nuclear Information System (INIS)

    Haider, F. A.; Chee, F. P.; Abu Hassan, H.; Saafie, S.; Afishah, A.

    2016-01-01

    Neutron radiation causes significant changes in the characteristics of MOS devices by the creation of oxide-trapped charge and interface traps. The degradation of the current gain of the GF4936 dual n-channel depletion mode MOS transistor, caused by neutron displacement defects, was measured using in-situ method during neutron irradiation. The average degradation of the gain current is 35 mA at maximum fluence of 2.0 × 10 10 n/cm2 while with an average of 25 mA at minimum fluence of 5.0 × 10 8 n/cm 2 . The change in channel current gain increased proportionally with neutron fluence, meanwhile drain saturation current decreased proportionally with the neutron fluence

  5. Changes in electrical properties of MOS transistor induced by single 14 MeV neutron

    Energy Technology Data Exchange (ETDEWEB)

    Haider, F. A., E-mail: haider@salam.uitm.edu.my; Chee, F. P., E-mail: fpchee06@ums.edu.my; Abu Hassan, H. [School of Physics and Materials, Faculty of Applied Science, Universiti Teknologi MARA, Shah Alam, Selangor (Malaysia); Saafie, S.; Afishah, A. [Physics with Electronic Department, Faculty of Science and Natural Resources, University of Malaysia Sabah, Kota Kinabalu, Sabah (Malaysia)

    2016-01-22

    Neutron radiation causes significant changes in the characteristics of MOS devices by the creation of oxide-trapped charge and interface traps. The degradation of the current gain of the GF4936 dual n-channel depletion mode MOS transistor, caused by neutron displacement defects, was measured using in-situ method during neutron irradiation. The average degradation of the gain current is 35 mA at maximum fluence of 2.0 × 10{sup 10} n/cm2 while with an average of 25 mA at minimum fluence of 5.0 × 10{sup 8} n/cm{sup 2}. The change in channel current gain increased proportionally with neutron fluence, meanwhile drain saturation current decreased proportionally with the neutron fluence.

  6. Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-Ray Irradiation

    CERN Document Server

    Silvestri, M; Gerardin, Simone; Faccio, Federico; Paccagnella, Alessandro

    2010-01-01

    We present new experimental results on heavy ion-induced gate rupture on deep submicron CMOS transistor arrays. Through the use of dedicated test structures, composed by a large number of 130-nm MOSFETs connected in parallel, we show the response to heavy ion irradiation under high stress voltages of devices previously irradiated with X-rays. We found only a slight impact on gate rupture critical voltage at a LET of 32 MeV cm(2) mg(-1) for devices previously irradiated up to 3 Mrad(SiO2), and practically no change for 100 Mrad(SiO2) irradiation, dose of interest for the future super large hadron collider (SLHC).

  7. Highly Sensitive Ammonia Gas Sensor Based on Single-Crystal Poly(3-hexylthiophene) (P3HT) Organic Field Effect Transistor.

    Science.gov (United States)

    Mun, Seohyun; Park, Yoonkyung; Lee, Yong-Eun Koo; Sung, Myung Mo

    2017-11-28

    A highly sensitive organic field-effect transistor (OFET)-based sensor for ammonia in the range of 0.01 to 25 ppm was developed. The sensor was fabricated by employing an array of single-crystal poly(3-hexylthiophene) (P3HT) nanowires as the organic semiconductor (OSC) layer of an OFET with a top-contact geometry. The electrical characteristics (field-effect mobility, on/off current ratio) of the single-crystal P3HT nanowire OFET were about 2 orders of magnitude larger than those of the P3HT thin film OFET with the same geometry. The P3HT nanowire OFET showed excellent sensitivity to ammonia, about 3 times higher than that of the P3HT thin film OFET at 25 ppm ammonia. The ammonia response of the OFET was reversible and was not affected by changes in relative humidity from 45 to 100%. The high ammonia sensitivity of the P3HT nanowire OFET is believed to result from the single crystal nature and high surface/volume ratio of the P3HT nanowire used in the OSC layer.

  8. Analyses of Short Channel Effects of Single-Gate and Double-Gate Graphene Nanoribbon Field Effect Transistors

    Directory of Open Access Journals (Sweden)

    Hojjatollah Sarvari

    2016-01-01

    Full Text Available Short channel effects of single-gate and double-gate graphene nanoribbon field effect transistors (GNRFETs are studied based on the atomistic pz orbital model for the Hamiltonian of graphene nanoribbon using the nonequilibrium Green’s function formalism. A tight-binding Hamiltonian with an atomistic pz orbital basis set is used to describe the atomistic details in the channel of the GNRFETs. We have investigated the vital short channel effect parameters such as Ion and Ioff, the threshold voltage, the subthreshold swing, and the drain induced barrier lowering versus the channel length and oxide thickness of the GNRFETs in detail. The gate capacitance and the transconductance of both devices are also computed in order to calculate the intrinsic cut-off frequency and switching delay of GNRFETs. Furthermore, the effects of doping of the channel on the threshold voltage and the frequency response of the double-gate GNRFET are discussed. We have shown that the single-gate GNRFET suffers more from short channel effects if compared with those of the double-gate structure; however, both devices have nearly the same cut-off frequency in the range of terahertz. This work provides a collection of data comparing different features of short channel effects of the single gate with those of the double gate GNRFETs. The results give a very good insight into the devices and are very useful for their digital applications.

  9. Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient.

    Science.gov (United States)

    Barreda, Jorge L; Keiper, Timothy D; Zhang, Mei; Xiong, Peng

    2017-04-05

    In comparison to conventional (channel-limited) field-effect transistors (FETs), Schottky barrier-limited FETs possess some unique characteristics which make them attractive candidates for some electronic and sensing applications. Consequently, modulation of the nano Schottky barrier at a metal-semiconductor interface promises higher performance for chemical and biomolecular sensor applications when compared to conventional FETs with ohmic contacts. However, the fabrication and optimization of devices with a combination of ideal ohmic and Schottky contacts as the source and drain, respectively, present many challenges. We address this issue by utilizing Si nanowires (NWs) synthesized by a chemical vapor deposition process which yields a pronounced doping gradient along the length of the NWs. Devices with a series of metal contacts on a single Si NW are fabricated in a single lithography and metallization process. The graded doping profile of the NW is manifested in monotonic increases in the channel and junction resistances and variation of the nature of the contacts from ohmic to Schottky of increasing effective barrier height along the NW. Hence multiple single Schottky junction-limited FETs with extreme asymmetry and high reproducibility are obtained on an individual NW. A definitive correlation between increasing Schottky barrier height and enhanced gate modulation is revealed. Having access to systematically varying Schottky barrier contacts on the same NW device provides an ideal platform for identifying optimal device characteristics for sensing and electronic applications.

  10. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  11. Electric-Field Control of Interfering Transport Pathways in a Single-Molecule Anthraquinone Transistor

    NARCIS (Netherlands)

    Koole, Max; Thijssen, Jos M.; Valkenier, Hennie; Hummelen, Jan C.; van der Zant, Herre S. J.

    It is understood that molecular conjugation plays an important role in charge transport through single-molecule junctions. Here, we investigate electron transport through an anthraquinone based single-molecule three-terminal device. With the use of an electric-field induced by a gate electrode, the

  12. Memory and learning behaviors mimicked in nanogranular SiO2-based proton conductor gated oxide-based synaptic transistors.

    Science.gov (United States)

    Wan, Chang Jin; Zhu, Li Qiang; Zhou, Ju Mei; Shi, Yi; Wan, Qing

    2013-11-07

    In neuroscience, signal processing, memory and learning function are established in the brain by modifying ionic fluxes in neurons and synapses. Emulation of memory and learning behaviors of biological systems by nanoscale ionic/electronic devices is highly desirable for building neuromorphic systems or even artificial neural networks. Here, novel artificial synapses based on junctionless oxide-based protonic/electronic hybrid transistors gated by nanogranular phosphorus-doped SiO2-based proton-conducting films are fabricated on glass substrates by a room-temperature process. Short-term memory (STM) and long-term memory (LTM) are mimicked by tuning the pulse gate voltage amplitude. The LTM process in such an artificial synapse is due to the proton-related interfacial electrochemical reaction. Our results are highly desirable for building future neuromorphic systems or even artificial networks via electronic elements.

  13. Single-crystal C60 needle/CuPc nanoparticle double floating-gate for low-voltage organic transistors based non-volatile memory devices.

    Science.gov (United States)

    Chang, Hsuan-Chun; Lu, Chien; Liu, Cheng-Liang; Chen, Wen-Chang

    2015-01-07

    Low-voltage organic field-effect transistor memory devices exhibiting a wide memory window, low power consumption, acceptable retention, endurance properties, and tunable memory performance are fabricated. The performance is achieved by employing single-crystal C60 needles and copper phthalocyanine nanoparticles to produce an ambipolar (hole/electron) trapping effect in a double floating-gate architecture. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. High performance of low band gap polymer-based ambipolar transistor using single-layer graphene electrodes.

    Science.gov (United States)

    Choi, Jong Yong; Kang, Woonggi; Kang, Boseok; Cha, Wonsuk; Son, Seon Kyoung; Yoon, Youngwoon; Kim, Hyunjung; Kang, Youngjong; Ko, Min Jae; Son, Hae Jung; Cho, Kilwon; Cho, Jeong Ho; Kim, BongSoo

    2015-03-18

    Bottom-contact bottom-gate organic field-effect transistors (OFETs) are fabricated using a low band gap pDTTDPP-DT polymer as a channel material and single-layer graphene (SLG) or Au source/drain electrodes. The SLG-based ambipolar OFETs significantly outperform the Au-based ambipolar OFETs, and thermal annealing effectively improves the carrier mobilities of the pDTTDPP-DT films. The difference is attributed to the following facts: (i) the thermally annealed pDTTDPP-DT chains on the SLG assume more crystalline features with an edge-on orientation as compared to the polymer chains on the Au, (ii) the morphological features of the thermally annealed pDTTDPP-DT films on the SLG electrodes are closer to the features of those on the gate dielectric layer, and (iii) the SLG electrode provides a flatter, more hydrophobic surface that is favorable for the polymer crystallization than the Au. In addition, the preferred carrier transport in each electrode-based OFET is associated with the HOMO/LUMO alignment relative to the Fermi level of the employed electrode. All of these experimental results consistently explain why the carrier mobilities of the SLG-based OFET are more than 10 times higher than those of the Au-based OTFT. This work demonstrates the strong dependence of ambipolar carrier transport on the source/drain electrode and annealing temperature.

  15. Electron and heat transport in porphyrin-based single-molecule transistors with electro-burnt graphene electrodes

    Directory of Open Access Journals (Sweden)

    Hatef Sadeghi

    2015-06-01

    Full Text Available We have studied the charge and thermal transport properties of a porphyrin-based single-molecule transistor with electro-burnt graphene electrodes (EBG using the nonequilibrium Green’s function method and density functional theory. The porphyrin-based molecule is bound to the EBG electrodes by planar aromatic anchor groups. Due to the efficient π–π overlap between the anchor groups and graphene and the location of frontier orbitals relative to the EBG Fermi energy, we predict HOMO-dominated transport. An on–off ratio as high as 150 is predicted for the device, which could be utilized with small gate voltages in the range of ±0.1 V. A positive thermopower of +280 μV/K is predicted for the device at the theoretical Fermi energy. The sign of the thermopower could be changed by tuning the Fermi energy. By gating the junction and changing the Fermi energy by +10 meV, this can be further enhanced to +475 μV/K. Although the electrodes and molecule are symmetric, the junction itself can be asymmetric due to different binding configurations at the electrodes. This can lead to rectification in the current–voltage characteristic of the junction.

  16. An Air-Stable DPP-thieno-TTF Copolymer for Single-Material Solar Cell Devices and Field Effect Transistors.

    Science.gov (United States)

    Arumugam, Sasikumar; Cortizo-Lacalle, Diego; Rossbauer, Stephan; Hunter, Simon; Kanibolotsky, Alexander L; Inigo, Anto R; Lane, Paul A; Anthopoulos, Thomas D; Skabara, Peter J

    2015-12-30

    Following an approach developed in our group to incorporate tetrathiafulvalene (TTF) units into conjugated polymeric systems, we have studied a low band gap polymer incorporating TTF as a donor component. This polymer is based on a fused thieno-TTF unit that enables the direct incorporation of the TTF unit into the polymer, and a second comonomer based on the diketopyrrolopyrrole (DPP) molecule. These units represent a donor-acceptor copolymer system, p(DPP-TTF), showing strong absorption in the UV-visible region of the spectrum. An optimized p(DPP-TTF) polymer organic field effect transistor and a single material organic solar cell device showed excellent performance with a hole mobility of up to 5.3 × 10(-2) cm(2)/(V s) and a power conversion efficiency (PCE) of 0.3%, respectively. Bulk heterojunction organic photovoltaic devices of p(DPP-TTF) blended with phenyl-C71-butyric acid methyl ester (PC71BM) exhibited a PCE of 1.8%.

  17. Single electron transistors with hydrogen treatment of ALD SiO2 in nanoscale metal-insulator-metal tunnel junctions

    Science.gov (United States)

    Karbasian, Golnaz; McConnell, Michael S.; Orlov, Alexei O.; Nazarov, Alexei N.; Snider, Gregory L.

    2017-05-01

    Over the past five years, fabrication of metal-insulator-metal (MIM) single electron transistors (SET) featuring atomic layer deposition (ALD) of ultrathin tunnel barrier dielectrics (SiO2, Al2O3) has been reported. However, the performance of fabricated devices was significantly compromised by the presence of native metal oxide and problems associated with the nucleation of ALD dielectrics on metal substrates. To overcome the difficulty of dielectric ALD nucleation on metal substrates, we recently developed a fabrication technique in which the native metal oxide naturally forming in the presence of the ALD oxidant precursor is first used to promote the nucleation of ALD dielectrics, and then is chemically reduced by forming gas anneal (FGA) at temperatures near 400 °C. However, despite the elimination of native oxide, low temperature characterization of the devices fabricated using FGA reveals excess ‘switching’ noise of a very large magnitude resulting from charged defects within the junctions. It has been previously reported that remote hydrogen plasma (RHP) treatment of SiO2 thin films effectively eradicates fabrication defects. This work reports a comparative study of Ni-based MIM SET treated with FGA and/or RHP. We show that, using a combination of FGA and RHP treatments, it is possible to obtain MIM junctions free of switching noise and without a detectable contribution of native oxide.

  18. Characteristics of a single-channel superconducting flux flow transistor fabricated by an AFM modification technique

    International Nuclear Information System (INIS)

    Ko, Seokcheol; Kim, Seong-Jong

    2007-01-01

    The demand for high performance, integrity, and miniaturization in the area of electronic and mechanic devices has drawn interest in the fabrication of nanostructures. However, it is difficult to fabricate the channel with nano-scale using a conventional photography techniques. AFM anodization technique is a maskless process and effective method to overcome the difficulty in fabricating a nano-scale channel. In this paper, we first present a new fabrication of a single-channel SFFT using a selective oxidation process induced by an AFM probe. The modified channel was investigated by electron probe microanalyzer (EPMA) to find the compositional variation of the transformed region. In order to confirm the operation of a single-channel SFFT, we measured the voltage-current characteristics at the temperature of liquid nitrogen by an I-V automatic measurement system. Our results indicate that the single-channel SFFT having effect as a weak link is effectively fabricated by an AFM lithography process

  19. Electric-Field Control of Interfering Transport Pathways in a Single-Molecule Anthraquinone Transistor

    Science.gov (United States)

    Koole, Max; Thijssen, Jos M.; Valkenier, Hennie; Hummelen, Jan C.; Zant, Herre S. J. van der

    2015-08-01

    It is understood that molecular conjugation plays an important role in charge transport through single-molecule junctions. Here, we investigate electron transport through an anthraquinone based single-molecule three-terminal device. With the use of an electric-field induced by a gate electrode, the molecule is reduced resulting into a ten-fold increase in the off-resonant differential conductance. Theoretical calculations link the change in differential conductance to a reduction-induced change in conjugation, thereby lifting destructive interference of transport pathways.

  20. Transistor properties of exfoliated single crystals of 2 H -Mo (Se1-xT ex ) 2(0 ≤x ≤1 )

    Science.gov (United States)

    Uesugi, Eri; Miao, Xiao; Ota, Hiromi; Goto, Hidenori; Kubozono, Yoshihiro

    2017-06-01

    Field-effect transistors (FETs) were fabricated using exfoliated single crystals of Mo (Se1-xT ex) 2 with an x range of 0 to 1, and the transistor properties fully investigated at 295 K in four-terminal measurement mode. The chemical composition and crystal structure of exfoliated single crystals were identified by energy-dispersive x-ray spectroscopy (EDX), single-crystal x-ray diffraction, and Raman scattering, suggesting the 2 H - structure in all Mo (Se1-xT ex) 2 . The lattice constants of a and c increase monotonically with increasing x , indicating the substitution of Se by Te. When x 0.4 . In contrast, the polarity of a thick single-crystal Mo (Se1-xT ex) 2 FET did not change despite an increase in x . The change of polarity in a thin single-crystal FET was well explained by the variation of electronic structure. The absence of such change in the thick single-crystal FET can be reasonably interpreted based on the large bulk conduction due to naturally accumulated electrons. The μ value in the thin single-crystal FET showed a parabolic variation, with a minimum μ at around x =0.4 , which probably originates from the disorder of the single crystal caused by the partial replacement of Se by Te, i.e., a disorder that may be due to ionic size difference of Se and Te.

  1. Rapid detection of single E. coli bacteria using a graphene-based field-effect transistor device.

    Science.gov (United States)

    Thakur, Bhawana; Zhou, Guihua; Chang, Jingbo; Pu, Haihui; Jin, Bing; Sui, Xiaoyu; Yuan, Xiaochen; Yang, Ching-Hong; Magruder, Matthew; Chen, Junhong

    2018-07-01

    Contamination of surface and drinking water due to the presence of Escherichia coli bacteria is a major cause of water-borne disease outbreak. To address unmet challenges for practical pathogen detection in contaminated samples, we report fabrication of thermally reduced graphene oxide-based field-effect transistor (rGO FET) passivated with an ultrathin layer of Al 2 O 3 for real-time detection of E. coli bacteria. The sensor could detect a single E. coli cell within 50 s in a 1 µL sample volume. The ultrathin layer of Al 2 O 3 acted as a barrier between rGO and potential interferents present in the sample. E. coli specific antibodies anchored on gold nanoparticles acted as probes for selective capture of E. coli. The high density of negative charge on the surface of E. coli cells strongly modulates the concentration of majority charge carriers in the rGO monolayer, thereby allowing real-time monitoring of E. coli concentration in a given sample. With a low detection limit of single cell, the FET sensor had a linear range of 1-100 CFU in 1 µL volume of sample (i.e., 10 3 to 10 5 CFU/ mL). The biosensor with good selectivity and rapid detection was further successfully demonstrated for E. coli sensing in river water. The rGO-based FET sensor provides a low cost and label-free approach, and can be mass produced for detection of a broad spectrum of pathogens in water or other liquid media. Copyright © 2018 Elsevier B.V. All rights reserved.

  2. Unijunction transistors

    International Nuclear Information System (INIS)

    1981-01-01

    The electrical characteristics of unijunction transistors can be modified by irradiation with electron beams in excess of 400 KeV and at a dose rate of 10 13 to 10 16 e/cm 2 . Examples are given of the effect of exposing the emitter-base junctions of transistors to such lattice defect causing radiation for a time sufficient to change the valley current of the transistor. (U.K.)

  3. Extraction of contact resistance and channel parameters from the electrical characteristics of a single bottom-gate/top-contact organic transistor

    Science.gov (United States)

    Takagaki, Shunsuke; Yamada, Hirofumi; Noda, Kei

    2016-03-01

    A parameter extraction procedure for staggered-type organic field-effect transistors (OFETs), in which only the electrical characteristics of a single device are needed, was newly considered. The existing differential method and the transition voltage method for evaluating contact and channel parameters in OFETs were complementarily combined. The calibration of the total resistance between the source and the drain was also incorporated to compensate discrepancies in the total resistances calculated from output and transfer characteristics, caused by the existence of nonignorable contact resistance and carrier traps. By using our proposed method, gate-voltage-dependent contact resistance and channel mobility in the linear regime were evaluated for bottom-gate/top-contact pentacene thin-film transistors, and the channel-length dependence of these parameters was investigated. A series of results of parameter extraction confirm the validity of our proposed method, which is advantageous in avoiding the influences of characteristic variations that are frequently observed in practical OFET devices.

  4. Multi-valued logic circuits using hybrid circuit consisting of three gates single-electron transistors (TG-SETs) and MOSFETs.

    Science.gov (United States)

    Shin, SeungJun; Yu, YunSeop; Choi, JungBum

    2008-10-01

    New multi-valued logic (MVL) families using the hybrid circuits consisting of three gates single-electron transistors (TG-SETs) and a metal-oxide-semiconductor field-effect transistor (MOSFET) are proposed. The use of SETs offers periodic literal characteristics due to Coulomb oscillation of SET, which allows a realization of binary logic (BL) circuits as well as multi-valued logic (MVL) circuits. The basic operations of the proposed MVL families are successfully confirmed through SPICE circuit simulation based on the physical device model of a TG-SET. The proposed MVL circuits are found to be much faster, but much larger power consumption than a previously reported MVL, and they have a trade-off between speed and power consumption. As an example to apply the newly developed MVL families, a half-adder is introduced.

  5. Charge transport across a single-Cooper-pair transistor coupled to a resonant transmission line

    Energy Technology Data Exchange (ETDEWEB)

    Leppaekangas, Juha [Institut fuer Theoretische Festkoerperphysik, Karlsruhe Institute of Technology, D-76128 Karlsruhe (Germany); Department of Physical Sciences, University of Oulu, FI-90014 Oulu (Finland); Pashkin, Yuri [NEC Nano Electronics Research Laboratories, RIKEN Advanced Science Institute, Tsukuba, Ibaraki 305-8501 (Japan); Thuneberg, Erkki [Department of Physical Sciences, University of Oulu, FI-90014 Oulu (Finland)

    2010-07-01

    We have investigated charge transport in ultrasmall superconducting single and double Josephson junctions coupled to a transmission-line resonator. The microstrip resonator is naturally formed by the on-chip leads and the sample holder. We observe equidistant peaks in the transport characteristics of both types of devices and attribute them to the process involving simultaneous tunneling of Cooper pairs and photon emission into the resonator. The experimental data is well reproduced with the orthodox model of Cooper pair tunneling that accounts for the microwave photon emission into the resonator.

  6. Electronic readout of a single nuclear spin using a molecular spin transistor

    Science.gov (United States)

    Vincent, R.; Klyastskaya, S.; Ruben, M.; Wernsdorfer, W.; Balestro, F.

    2012-02-01

    Quantum control of individual spins in condensed matter devices is an emerging field with a wide range of applications ranging from nanospintronics to quantum computing [1,2]. The electron, with its spin and orbital degrees of freedom, is conventionally used as carrier of the quantum information in the devices proposed so far. However, electrons exhibit a strong coupling to the environment leading to reduced relaxation and coherence times. Indeed quantum coherence and stable entanglement of electron spins are extremely difficult to achieve. We propose a new approach using the nuclear spin of an individual metal atom embedded in a single-molecule magnet (SMM). In order to perform the readout of the nuclear spin, the quantum tunneling of the magnetization (QTM) of the magnetic moment of the SMM in a transitor-like set-up is electronically detected. Long spin lifetimes of an individual nuclear spin were observed and the relaxation characteristics were studied. The manipulation of the nuclear spin state of individual atoms embedded in magnetic molecules opens a completely new world, where quantum logic may be integrated.[4pt] [1] L. Bogani, W. Wernsdorfer, Nature Mat. 7, 179 (2008).[0pt] [2] M. Urdampilleta, S. Klyatskaya, J.P. Cleuziou, M. Ruben, W. Wernsdorfer, Nature Mat. 10, 502 (2011).

  7. Superconducting transistor

    International Nuclear Information System (INIS)

    Gray, K.E.

    1978-01-01

    A three film superconducting tunneling device, analogous to a semiconductor transistor, is presented, including a theoretical description and experimental results showing a current gain of four. Much larger current gains are shown to be feasible. Such a development is particularly interesting because of its novelty and the striking analogies with the semiconductor junction transistor

  8. A New Analytical Subthreshold Behavior Model for Single-Halo, Dual-Material Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

    Science.gov (United States)

    Chiang, Te-Kuang

    2008-11-01

    On the basis of the exact solution of the two-dimensional Poisson equation, a new analytical subthreshold behavior model consisting of the two-dimensional potential, threshold voltage, and subthreshold current for the single-halo, dual-material gate (SHDMG) silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) is developed. The model is verified by the good agreement with a numerical simulation using the device simulator MEDICI. The model not only offers a physical insight into device physics but is also an efficient device model for the circuit simulation.

  9. Deep learning for single-molecule science

    Science.gov (United States)

    Albrecht, Tim; Slabaugh, Gregory; Alonso, Eduardo; Al-Arif, SM Masudur R.

    2017-10-01

    Exploring and making predictions based on single-molecule data can be challenging, not only due to the sheer size of the datasets, but also because a priori knowledge about the signal characteristics is typically limited and poor signal-to-noise ratio. For example, hypothesis-driven data exploration, informed by an expectation of the signal characteristics, can lead to interpretation bias or loss of information. Equally, even when the different data categories are known, e.g., the four bases in DNA sequencing, it is often difficult to know how to make best use of the available information content. The latest developments in machine learning (ML), so-called deep learning (DL) offer interesting, new avenues to address such challenges. In some applications, such as speech and image recognition, DL has been able to outperform conventional ML strategies and even human performance. However, to date DL has not been applied much in single-molecule science, presumably in part because relatively little is known about the ‘internal workings’ of such DL tools within single-molecule science as a field. In this Tutorial, we make an attempt to illustrate in a step-by-step guide how one of those, a convolutional neural network (CNN), may be used for base calling in DNA sequencing applications. We compare it with a SVM as a more conventional ML method, and discuss some of the strengths and weaknesses of the approach. In particular, a ‘deep’ neural network has many features of a ‘black box’, which has important implications on how we look at and interpret data.

  10. High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.

    Science.gov (United States)

    Gao, Ying; Asadirad, Mojtaba; Yao, Yao; Dutta, Pavel; Galstyan, Eduard; Shervin, Shahab; Lee, Keon-Hwa; Pouladi, Sara; Sun, Sicong; Li, Yongkuan; Rathi, Monika; Ryou, Jae-Hyun; Selvamanickam, Venkat

    2016-11-02

    Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm 2 /V·s and saturation current, I/l W > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.

  11. Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors.

    Science.gov (United States)

    Lee, W; Su, P

    2009-02-11

    This paper systematically presents controlled single-electron effects in multiple-gate silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) with various gate lengths, fin widths, gate bias and temperature. Our study indicates that using the non-overlapped gate to source/drain structure as an approach to the single-electron transistor (SET) in MOSFETs is promising. Combining the advantage of gate control and the constriction of high source/drain resistances, single-electron effects are further enhanced using the multiple-gate architecture. From the presented results, downsizing multiple-gate SOI MOSFETs is needed for future room-temperature SET applications. Besides, the tunnel barriers and access resistances may need to be further optimized. Since the Coulomb blockade oscillation can be achieved in state-of-the-art complementary metal-oxide-semiconductor (CMOS) devices, it is beneficial to build SETs in low-power CMOS circuits for ultra-high-density purposes.

  12. Solution-processed single-walled carbon nanotube field effect transistors and bootstrapped inverters for disintegratable, transient electronics

    International Nuclear Information System (INIS)

    Jin, Sung Hun; Shin, Jongmin; Cho, In-Tak; Lee, Jong-Ho; Han, Sang Youn; Lee, Dong Joon; Lee, Chi Hwan; Rogers, John A.

    2014-01-01

    This paper presents materials, device designs, and physical/electrical characteristics of a form of nanotube electronics that is physically transient, in the sense that all constituent elements dissolve and/or disperse upon immersion into water. Studies of contact effects illustrate the ability to use water soluble metals such as magnesium for source/drain contacts in nanotube based field effect transistors. High mobilities and on/off ratios in transistors that use molybdenum, silicon nitride, and silicon oxide enable full swing characteristics for inverters at low voltages (∼5 V) and with high gains (∼30). Dissolution/disintegration tests of such systems on water soluble sheets of polyvinyl alcohol demonstrate physical transience within 30 min.

  13. Inversion gate capacitance of undoped single-gate and double-gate field-effect transistor geometries in the extreme quantum limit

    Energy Technology Data Exchange (ETDEWEB)

    Majumdar, Amlan, E-mail: amajumd@us.ibm.com [IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

    2015-05-28

    We present first-principle analytical derivations and numerically modeled data to show that the gate capacitance per unit gate area C{sub G} of extremely thin undoped-channel single-gate and double-gate field-effect transistor geometries in the extreme quantum limit with single-subband occupancy can be written as 1/C{sub G} = 1/C{sub OX} + N{sub G}/C{sub DOS} + N{sub G}/ηC{sub WF}, where N{sub G} is the number of gates, C{sub OX} is the oxide capacitance per unit area, C{sub DOS} is the density-of-states capacitance per unit area, C{sub WF} is the wave function spreading capacitance per unit area, and η is a constant on the order of 1.

  14. Single carrier trapping and de-trapping in scaled silicon complementary metal-oxide-semiconductor field-effect transistors at low temperatures

    Science.gov (United States)

    Li, Zuo; Khaled Husain, Muhammad; Yoshimoto, Hiroyuki; Tani, Kazuki; Sasago, Yoshitaka; Hisamoto, Digh; Fletcher, Jonathan David; Kataoka, Masaya; Tsuchiya, Yoshishige; Saito, Shinichi

    2017-07-01

    The scaling of Silicon (Si) technology is approaching the physical limit, where various quantum effects such as direct tunnelling and quantum confinement are observed, even at room temperatures. We have measured standard complementary metal-oxide-semiconductor field-effect-transistors (CMOSFETs) with wide and short channels at low temperatures to observe single electron/hole characteristics due to local structural disturbances such as roughness and defects. In fact, we observed Coulomb blockades in sub-threshold regimes of both p-type and n-type Si CMOSFETs, showing the presence of quantum dots in the channels. The stability diagrams for the Coulomb blockade were explained by the potential minima due to poly-Si grains. We have also observed sharp current peaks at narrow bias windows at the edges of the Coulomb diamonds, showing resonant tunnelling of single carriers through charge traps.

  15. Effects of Ambient Air and Temperature on Ionic Gel Gated Single-Walled Carbon Nanotube Thin-Film Transistor and Circuits.

    Science.gov (United States)

    Li, Huaping; Zhou, Lili

    2015-10-21

    Single-walled carbon nanotube thin-film transistor (SWCNT TFT) and circuits were fabricated by fully inkjet printing gold nanoparticles as source/drain electrodes, semiconducting SWCNT thin films as channel materials, PS-PMMA-PS/EMIM TFSI composite gel as gate dielectrics, and PEDOT/PSS as gate electrodes. The ionic gel gated SWCNT TFT shows reversible conversion from p-type transistor behavior in air to ambipolar features under vacuum due to reversible oxygen doping in semiconducting SWCNT thin films. The threshold voltages of ionic gel gated SWCNT TFT and inverters are largely shifted to the low value (0.5 V for p-region and 1.0 V for n-region) by vacuum annealing at 140 °C to exhausively remove water that is incorporated in the ionic gel as floating gates. The vacuum annealed ionic gel gated SWCNT TFT shows linear temperature dependent transconductances and threshold voltages for both p- and n-regions. The strong temperature dependent transconductances (0.08 μS/K for p-region, 0.4 μS/K for n-region) indicate their potential application in thermal sensors. In the other hand, the weak temperature dependent threshold voltages (-1.5 mV/K for p-region, -1.1 mV/K for n-region) reflect their excellent thermal stability.

  16. Contact effects analyzed by a parameter extraction method based on a single bottom-gate/top-contact organic thin-film transistor

    Science.gov (United States)

    Takagaki, Shunsuke; Yamada, Hirofumi; Noda, Kei

    2018-03-01

    Contact effects in organic thin-film transistors (OTFTs) were examined by using our previously proposed parameter extraction method from the electrical characteristics of a single staggered-type device. Gate-voltage-dependent contact resistance and channel mobility in the linear regime were evaluated for bottom-gate/top-contact (BGTC) pentacene TFTs with active layers of different thicknesses, and for pentacene TFTs with contact-doped layers prepared by coevaporation of pentacene and tetrafluorotetracyanoquinodimethane (F4TCNQ). The extracted parameters suggested that the influence of the contact resistance becomes more prominent with the larger active-layer thickness, and that contact-doping experiments give rise to a drastic decrease in the contact resistance and a concurrent considerable improvement in the channel mobility. Additionally, the estimated energy distributions of trap density in the transistor channel probably reflect the trap filling with charge carriers injected into the channel regions. The analysis results in this study confirm the effectiveness of our proposed method, with which we can investigate contact effects and circumvent the influences of characteristic variations in OTFT fabrication.

  17. A facile and low-cost length sorting of single-wall carbon nanotubes by precipitation and applications for thin-film transistors.

    Science.gov (United States)

    Gui, Hui; Chen, Haitian; Khripin, Constantine Y; Liu, Bilu; Fagan, Jeffrey A; Zhou, Chongwu; Zheng, Ming

    2016-02-14

    Semiconducting single-wall carbon nanotubes (SWCNTs) with long lengths are highly desirable for many applications such as thin-film transistors and circuits. Previously reported length sorting techniques usually require sophisticated instrumentation and are hard to scale up. In this paper, we report for the first time a general phenomenon of a length-dependent precipitation of surfactant-dispersed carbon nanotubes by polymers, salts, and their combinations. Polyelectrolytes such as polymethacrylate (PMAA) and polystyrene sulfonate (PSS) are found to be especially effective on cholate and deoxycholate dispersed SWCNTs. By adding PMAA to these nanotube dispersions in a stepwise fashion, we have achieved nanotube precipitation in a length-dependent order: first nanotubes with an average length of 650 nm, and then successively of 450 nm, 350 nm, and 250 nm. A similar effect of nanotube length sorting has also been observed for PSS. To demonstrate the utility of the length fractionation, the 650 nm-long nanotube fraction was subjected to an aqueous two-phase separation to obtain semiconducting enriched nanotubes. Thin-film transistors fabricated with the resulting semiconducting SWCNTs showed a carrier mobility up to 18 cm(2) (V s)(-1) and an on/off ratio up to 10(7). Our result sheds new light on the phase behavior of aqueous nanotube dispersions under high concentrations of polymers and salts, and offers a facile, low-cost, and scalable method to produce length sorted semiconducting nanotubes for macroelectronics applications.

  18. Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor

    International Nuclear Information System (INIS)

    Zhang Jin-Xin; Guo Bao-Long; Wu Xian-Xiang; He Chao-Hui; Li Pei; Guo Hong-Xia

    2017-01-01

    The fabrication process dependent effects on single event effects (SEEs) are investigated in a commercial silicon–germanium heterojunction bipolar transistor (SiGe HBT) using three-dimensional (3D) TCAD simulations. The influences of device structure and doping concentration on SEEs are discussed via analysis of current transient and charge collection induced by ions strike. The results show that the SEEs representation of current transient is different from representation of the charge collection for the same process parameters. To be specific, the area of C/S junction is the key parameter that affects charge collection of SEE. Both current transient and charge collection are dependent on the doping of collector and substrate. The base doping slightly influences transient currents of base, emitter, and collector terminals. However, the SEEs of SiGe HBT are hardly affected by the doping of epitaxial base and the content of Ge. (paper)

  19. Effect of supply voltage and body-biasing on single-event transient pulse quenching in bulk fin field-effect-transistor process

    International Nuclear Information System (INIS)

    Yu Jun-Ting; Chen Shu-Ming; Chen Jian-Jun; Huang Peng-Cheng; Song Rui-Qiang

    2016-01-01

    Charge sharing is becoming an important topic as the feature size scales down in fin field-effect-transistor (FinFET) technology. However, the studies of charge sharing induced single-event transient (SET) pulse quenching with bulk FinFET are reported seldomly. Using three-dimensional technology computer aided design (3DTCAD) mixed-mode simulations, the effects of supply voltage and body-biasing on SET pulse quenching are investigated for the first time in bulk FinFET process. Research results indicate that due to an enhanced charge sharing effect, the propagating SET pulse width decreases with reducing supply voltage. Moreover, compared with reverse body-biasing (RBB), the circuit with forward body-biasing (FBB) is vulnerable to charge sharing and can effectively mitigate the propagating SET pulse width up to 53% at least. This can provide guidance for radiation-hardened bulk FinFET technology especially in low power and high performance applications. (paper)

  20. Synchronization, non-linear dynamics and low-frequency fluctuations: Analogy between spontaneous brain activity and networked single-transistor chaotic oscillators

    Science.gov (United States)

    Minati, Ludovico; Chiesa, Pietro; Tabarelli, Davide; D'Incerti, Ludovico; Jovicich, Jorge

    2015-03-01

    In this paper, the topographical relationship between functional connectivity (intended as inter-regional synchronization), spectral and non-linear dynamical properties across cortical areas of the healthy human brain is considered. Based upon functional MRI acquisitions of spontaneous activity during wakeful idleness, node degree maps are determined by thresholding the temporal correlation coefficient among all voxel pairs. In addition, for individual voxel time-series, the relative amplitude of low-frequency fluctuations and the correlation dimension (D2), determined with respect to Fourier amplitude and value distribution matched surrogate data, are measured. Across cortical areas, high node degree is associated with a shift towards lower frequency activity and, compared to surrogate data, clearer saturation to a lower correlation dimension, suggesting presence of non-linear structure. An attempt to recapitulate this relationship in a network of single-transistor oscillators is made, based on a diffusive ring (n = 90) with added long-distance links defining four extended hub regions. Similarly to the brain data, it is found that oscillators in the hub regions generate signals with larger low-frequency cycle amplitude fluctuations and clearer saturation to a lower correlation dimension compared to surrogates. The effect emerges more markedly close to criticality. The homology observed between the two systems despite profound differences in scale, coupling mechanism and dynamics appears noteworthy. These experimental results motivate further investigation into the heterogeneity of cortical non-linear dynamics in relation to connectivity and underline the ability for small networks of single-transistor oscillators to recreate collective phenomena arising in much more complex biological systems, potentially representing a future platform for modelling disease-related changes.

  1. Synchronization, non-linear dynamics and low-frequency fluctuations: Analogy between spontaneous brain activity and networked single-transistor chaotic oscillators

    International Nuclear Information System (INIS)

    Minati, Ludovico; Chiesa, Pietro; Tabarelli, Davide; Jovicich, Jorge; D'Incerti, Ludovico

    2015-01-01

    In this paper, the topographical relationship between functional connectivity (intended as inter-regional synchronization), spectral and non-linear dynamical properties across cortical areas of the healthy human brain is considered. Based upon functional MRI acquisitions of spontaneous activity during wakeful idleness, node degree maps are determined by thresholding the temporal correlation coefficient among all voxel pairs. In addition, for individual voxel time-series, the relative amplitude of low-frequency fluctuations and the correlation dimension (D 2 ), determined with respect to Fourier amplitude and value distribution matched surrogate data, are measured. Across cortical areas, high node degree is associated with a shift towards lower frequency activity and, compared to surrogate data, clearer saturation to a lower correlation dimension, suggesting presence of non-linear structure. An attempt to recapitulate this relationship in a network of single-transistor oscillators is made, based on a diffusive ring (n = 90) with added long-distance links defining four extended hub regions. Similarly to the brain data, it is found that oscillators in the hub regions generate signals with larger low-frequency cycle amplitude fluctuations and clearer saturation to a lower correlation dimension compared to surrogates. The effect emerges more markedly close to criticality. The homology observed between the two systems despite profound differences in scale, coupling mechanism and dynamics appears noteworthy. These experimental results motivate further investigation into the heterogeneity of cortical non-linear dynamics in relation to connectivity and underline the ability for small networks of single-transistor oscillators to recreate collective phenomena arising in much more complex biological systems, potentially representing a future platform for modelling disease-related changes

  2. Effect of electrode design on crosstalk between neighboring organic field-effect transistors based on one single crystal

    Science.gov (United States)

    Li, Mengjie; Tang, Qingxin; Tong, Yanhong; Zhao, Xiaoli; Zhou, Shujun; Liu, Yichun

    2018-03-01

    The design of high-integration organic circuits must be such that the interference between neighboring devices is eliminated. Here, rubrene crystals were used to study the effect of the electrode design on crosstalk between neighboring organic field-effect transistors (OFETs). Results show that a decreased source/drain interval and gate electrode width can decrease the diffraction distance of the current, and therefore can weaken the crosstalk. In addition, the inherent low carrier concentration in organic semiconductors can create a high-resistance barrier at the space between gate electrodes of neighboring devices, limiting or even eliminating the crosstalk as a result of the gate electrode width being smaller than the source/drain electrode width.

  3. Junctionless Cooper pair transistor

    Energy Technology Data Exchange (ETDEWEB)

    Arutyunov, K. Yu., E-mail: konstantin.yu.arutyunov@jyu.fi [National Research University Higher School of Economics , Moscow Institute of Electronics and Mathematics, 101000 Moscow (Russian Federation); P.L. Kapitza Institute for Physical Problems RAS , Moscow 119334 (Russian Federation); Lehtinen, J.S. [VTT Technical Research Centre of Finland Ltd., Centre for Metrology MIKES, P.O. Box 1000, FI-02044 VTT (Finland)

    2017-02-15

    Highlights: • Junctionless Cooper pair box. • Quantum phase slips. • Coulomb blockade and gate modulation of the Coulomb gap. - Abstract: Quantum phase slip (QPS) is the topological singularity of the complex order parameter of a quasi-one-dimensional superconductor: momentary zeroing of the modulus and simultaneous 'slip' of the phase by ±2π. The QPS event(s) are the dynamic equivalent of tunneling through a conventional Josephson junction containing static in space and time weak link(s). Here we demonstrate the operation of a superconducting single electron transistor (Cooper pair transistor) without any tunnel junctions. Instead a pair of thin superconducting titanium wires in QPS regime was used. The current–voltage characteristics demonstrate the clear Coulomb blockade with magnitude of the Coulomb gap modulated by the gate potential. The Coulomb blockade disappears above the critical temperature, and at low temperatures can be suppressed by strong magnetic field.

  4. Controlled Growth of Large-Area Aligned Single-Crystalline Organic Nanoribbon Arrays for Transistors and Light-Emitting Diodes Driving

    Science.gov (United States)

    Wang, Wei; Wang, Liang; Dai, Gaole; Deng, Wei; Zhang, Xiujuan; Jie, Jiansheng; Zhang, Xiaohong

    2017-10-01

    Organic field-effect transistors (OFETs) based on organic micro-/nanocrystals have been widely reported with charge carrier mobility exceeding 1.0 cm2 V-1 s-1, demonstrating great potential for high-performance, low-cost organic electronic applications. However, fabrication of large-area organic micro-/nanocrystal arrays with consistent crystal growth direction has posed a significant technical challenge. Here, we describe a solution-processed dip-coating technique to grow large-area, aligned 9,10-bis(phenylethynyl) anthracene (BPEA) and 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-PEN) single-crystalline nanoribbon arrays. The method is scalable to a 5 × 10 cm2 wafer substrate, with around 60% of the wafer surface covered by aligned crystals. The quality of crystals can be easily controlled by tuning the dip-coating speed. Furthermore, OFETs based on well-aligned BPEA and TIPS-PEN single-crystalline nanoribbons were constructed. By optimizing channel lengths and using appropriate metallic electrodes, the BPEA and TIPS-PEN-based OFETs showed hole mobility exceeding 2.0 cm2 V-1 s-1 (average mobility 1.2 cm2 V-1 s-1) and 3.0 cm2 V-1 s-1 (average mobility 2.0 cm2 V-1 s-1), respectively. They both have a high on/off ratio ( I on/ I off) > 109. The performance can well satisfy the requirements for light-emitting diodes driving.

  5. Magnetic bipolar transistor

    OpenAIRE

    Fabian, Jaroslav; Zutic, Igor; Sarma, S. Das

    2003-01-01

    A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin. It is shown that electrical spin injection through the transistor is possible in the forward active regime. It is predicted that the current amplification of the transistor can be tuned by spin.

  6. Test Equipment Specifications Transistor

    OpenAIRE

    Didiek Andiana Ramadan; Drs. Linga Hermanto, MMSI Drs. Linga Hermanto, MMSI

    2005-01-01

    In this paper, we design a test apparatus Transistor Specification. Specification is atype of transistor is a transistor and common emitter current reinforcement value ( βDC ). The system will provide information in the form of an LED display emits greenlight when the tested types of NPN transistor and the second LED emits blue lightwhen the tested types of PNP transistors.To test the value of β, whose value is proportional to the display used by the collectorcurrent Ic.

  7. High-sensitivity pH sensor using separative extended-gate field-effect transistors with single-walled carbon-nanotube networks

    Science.gov (United States)

    Pyo, Ju-Young; Cho, Won-Ju

    2018-04-01

    We fabricate high-sensitivity pH sensors using single-walled carbon-nanotube (SWCNT) network thin-film transistors (TFTs). The sensing and transducer parts of the pH sensor are composed of separative extended-sensing gates (ESGs) with SnO2 ion-sensitive membranes and double-gate structure TFTs with thin SWCNT network channels of ∼1 nm and AlO x top-gate insulators formed by the solution-deposition method. To prevent thermal process-induced damages on the SWCNT channel layer due to the post-deposition annealing process and improve the electrical characteristics of the SWCNT-TFTs, microwave irradiation is applied at low temperatures. As a result, a pH sensitivity of 7.6 V/pH, far beyond the Nernst limit, is obtained owing to the capacitive coupling effect between the top- and bottom-gate insulators of the SWCNT-TFTs. Therefore, double-gate structure SWCNT-TFTs with separated ESGs are expected to be highly beneficial for high-sensitivity disposable biosensor applications.

  8. N-Type 2D Organic Single Crystals for High-Performance Organic Field-Effect Transistors and Near-Infrared Phototransistors.

    Science.gov (United States)

    Wang, Cong; Ren, Xiaochen; Xu, Chunhui; Fu, Beibei; Wang, Ruihao; Zhang, Xiaotao; Li, Rongjin; Li, Hongxiang; Dong, Huanli; Zhen, Yonggang; Lei, Shengbin; Jiang, Lang; Hu, Wenping

    2018-03-07

    Organic field-effect transistors and near-infrared (NIR) organic phototransistors (OPTs) have attracted world's attention in many fields in the past decades. In general, the sensitivity, distinguishing the signal from noise, is the key parameter to evaluate the performance of NIR OPTs, which is decided by responsivity and dark current. 2D single crystal films of organic semiconductors (2DCOS) are promising functional materials due to their long-range order in spite of only few molecular layers. Herein, for the first time, air-stable 2DCOS of n-type organic semiconductors (a furan-thiophene quinoidal compound, TFT-CN) with strong absorbance around 830 nm, by the facile drop-casting method on the surface of water are successfully prepared. Almost millimeter-sized TFT-CN 2DCOS are obtained and their thickness is below 5 nm. A competitive field-effect electron mobility (1.36 cm 2 V -1 s -1 ) and high on/off ratio (up to 10 8 ) are obtained in air. Impressively, the ultrasensitive NIR phototransistors operating at the off-state exhibit a very low dark current of ≈0.3 pA and an ultrahigh detectivity (D*) exceeding 6 × 10 14 Jones because the devices can operate in full depletion at the off-state, superior to the majority of the reported organic-based NIR phototransistors. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Nonvolatile ferroelectric memory based on PbTiO3 gated single-layer MoS2 field-effect transistor

    Science.gov (United States)

    Shin, Hyun Wook; Son, Jong Yeog

    2018-01-01

    We fabricated ferroelectric non-volatile random access memory (FeRAM) based on a field effect transistor (FET) consisting of a monolayer MoS2 channel and a ferroelectric PbTiO3 (PTO) thin film of gate insulator. An epitaxial PTO thin film was deposited on a Nb-doped SrTiO3 (Nb:STO) substrate via pulsed laser deposition. A monolayer MoS2 sheet was exfoliated from a bulk crystal and transferred to the surface of the PTO/Nb:STO. Structural and surface properties of the PTO thin film were characterized by X-ray diffraction and atomic force microscopy, respectively. Raman spectroscopy analysis was performed to identify the single-layer MoS2 sheet on the PTO/Nb:STO. We obtained mobility value (327 cm2/V·s) of the MoS2 channel at room temperature. The MoS2-PTO FeRAM FET showed a wide memory window with 17 kΩ of resistance variation which was attributed to high remnant polarization of the epitaxially grown PTO thin film. According to the fatigue resistance test for the FeRAM FET, however, the resistance states gradually varied during the switching cycles of 109. [Figure not available: see fulltext.

  10. High-voltage (100 V ChipfilmTM single-crystal silicon LDMOS transistor for integrated driver circuits in flexible displays

    Directory of Open Access Journals (Sweden)

    J. N. Burghartz

    2009-05-01

    Full Text Available System-in-Foil (SiF is an emerging field of large-area polymer electronics that employs new materials such as conductive polymers and electrophoretic micro-capsules (E-Ink along with ultra-thin and thus flexible chips. In flexible displays, the integration of gate and source drivers onto the flexible part increases the yield and enhances the reliability of the system. In this work we propose a high-voltage ChipfilmTM lateral diffused MOS transistor (LDMOS structure on ultra-thin single-crystalline silicon chips. The fabrication process is compatible with CMOS standard processing. This LDMOS structure proves to be well suited for providing adequately large switching voltages in spite of the thin (<10 μm substrate. A breakdown voltage of more than 100 volts with drain-to-source saturation current Ids(sat≈85 μA/μm for N-LDMOS and Ids(sat≈20 μA/μm for P-LDMOS is predicted through process and device simulations.

  11. The four-gate transistor

    Science.gov (United States)

    Mojarradi, M. M.; Cristoveanu, S.; Allibert, F.; France, G.; Blalock, B.; Durfrene, B.

    2002-01-01

    The four-gate transistor or G4-FET combines MOSFET and JFET principles in a single SOI device. Experimental results reveal that each gate can modulate the drain current. Numerical simulations are presented to clarify the mechanisms of operation. The new device shows enhanced functionality, due to the combinatorial action of the four gates, and opens rather revolutionary applications.

  12. Transistor Clamped Five-Level Inverter using Non-Inverting Double Reference Single Carrier PWM Technique for photovoltaic applications

    DEFF Research Database (Denmark)

    Bhaskar, Mahajan Sagar; Padmanaban, Sanjeevikumar; Fedák, Viliam

    2017-01-01

    supplies or capacitor banks. To design the proposed five level inverter five numbers of power control switches and eight diodes are required. The proposed inverter circuitry is investigated by using Non-Inverting Double Reference Single Carrier PWM (NIDRSC PWM) Technique in terms of harmonics content...

  13. General derivation of the Green's functions for the atomic approach of the Anderson model: application to a single electron transistor (SET)

    Science.gov (United States)

    Foglio, M. E.; Lobo, T.; Figueira, M. S.

    2012-09-01

    We consider the cumulant expansion of the periodic Anderson model (PAM) in the case of a finite electronic correlation U, employing the hybridization as perturbation, and obtain a formal expression of the exact one-electron Green's function (GF). This expression contains effective cumulants that are as difficult to calculate as the original GF, and the atomic approach consists in substituting the effective cumulants by the ones that correspond to the atomic case, namely by taking a conduction band of zeroth width and local hybridization. In a previous work (T. Lobo, M. S. Figueira, and M. E. Foglio, Nanotechnology 21, 274007 (2010), 10.1088/0957-4484/21/27/274007) we developed the atomic approach by considering only one variational parameter that is used to adjust the correct height of the Kondo peak by imposing the satisfaction of the Friedel sum rule. To obtain the correct width of the Kondo peak in the present work, we consider an additional variational parameter that guarantees this quantity. The two constraints now imposed on the formalism are the satisfaction of the Friedel sum rule and the correct Kondo temperature. In the first part of the work, we present a general derivation of the method for the single impurity Anderson model (SIAM), and we calculate several density of states representative of the Kondo regime for finite correlation U, including the symmetrical case. In the second part, we apply the method to study the electronic transport through a quantum dot (QD) embedded in a quantum wire (QW), which is realized experimentally by a single electron transistor (SET). We calculate the conductance of the SET and obtain a good agreement with available experimental and theoretical results.

  14. High-performance thin-film-transistors based on semiconducting-enriched single-walled carbon nanotubes processed by electrical-breakdown strategy

    Energy Technology Data Exchange (ETDEWEB)

    Aïssa, B., E-mail: aissab@emt.inrs.ca [Centre Énergie, Matériaux et Télécommunications, INRS, 1650, boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada); Qatar Environment and Energy Research Institute (QEERI), Qatar Foundation, P.O. Box 5825, Doha (Qatar); Nedil, M. [Telebec Wireless Underground Communication Laboratory, UQAT, 675, 1" è" r" e Avenue, Val d’Or, Québec J9P 1Y3 (Canada); Habib, M.A. [Computer Sciences and Engineering Department, Yanbu University College, P.O. Box 30031 (Saudi Arabia); Abdul-Hafidh, E.H. [High Energy Physics Department, Yanbu University College, P.O. Box 30031 (Saudi Arabia); Rosei, F. [Centre Énergie, Matériaux et Télécommunications, INRS, 1650, boulevard Lionel-Boulet, Varennes, Quebec J3X 1S2 (Canada)

    2015-02-15

    Highlights: • We selectively burn metallic single wall carbon nanotubes (SWCNT) by electrical breakdown. • We successfully achieve a semiconducting enriched-SWCNT in TFT configuration. • High performance, like On/Off of 10{sup 5} and a subthreshold swing of 165 mV/decades were obtained. • After PMMA coating, the SWCNT–TFTs were found stables for more than 4 months. - Abstract: Over the past two decades, among remarkable variety of nanomaterials, single-walled carbon nanotubes (SWCNTs) remain the most intriguing and uniquely well suited materials for applications in high-performance electronics. The most advanced technologies require the ability to form purely semiconducting SWCNTs. Here, we report on our strategy based on the well known progressive electrical breakdown process that offer this capability and serves as highly efficient means for selectively removing metallic carbon nanotubes from electronically heterogeneous random networks, deposited on silicon substrates in a thin film transistor (TFT) configuration. We demonstrate the successful achievement of semiconducting enriched-SWCNT networks in TFT scheme that reach On/Off switching ratios of ∼100,000, on-conductance of 20 μS, and a subthreshold swing of less than 165 mV/decades. The obtained TFT devices were then protected with thin film poly(methyl methacrylate) (PMMA) to keep the percolation level of the SWCNTs network spatially and temporally stable, while protecting it from atmosphere exchanges. TFT devices were found to be air-stable and maintained their excellent characteristics in ambient atmosphere for more than 4 months. This approach could work as a platform for future nanotube-based nanoelectronics.

  15. Single-Frame Image Super-resolution through Contourlet Learning

    Directory of Open Access Journals (Sweden)

    Jiji CV

    2006-01-01

    Full Text Available We propose a learning-based, single-image super-resolution reconstruction technique using the contourlet transform, which is capable of capturing the smoothness along contours making use of directional decompositions. The contourlet coefficients at finer scales of the unknown high-resolution image are learned locally from a set of high-resolution training images, the inverse contourlet transform of which recovers the super-resolved image. In effect, we learn the high-resolution representation of an oriented edge primitive from the training data. Our experiments show that the proposed approach outperforms standard interpolation techniques as well as a standard (Cartesian wavelet-based learning both visually and in terms of the PSNR values, especially for images with arbitrarily oriented edges.

  16. Broad Beam and Ion Microprobe Studies of Single-Event Upsets in High Speed 0.18micron Silicon Germanium Heterojunction Bipolar Transistors and Circuits

    Science.gov (United States)

    Reed, Robert A.; Marshall, Paul W.; Pickel, Jim; Carts, Martin A.; Irwin, TIm; Niu, Guofu; Cressler, John; Krithivasan, Ramkumar; Fritz, Karl; Riggs, Pam

    2003-01-01

    SiGe based technology is widely recognized for its tremendous potential to impact the high speed microelectronic industry, and therefore the space industry, by monolithic incorporation of low power complementary logic with extremely high speed SiGe Heterojunction Bipolar Transistor (HBT) logic. A variety of studies have examined the ionizing dose, displacement damage and single event characteristics, and are reported. Accessibility to SiGe through an increasing number of manufacturers adds to the importance of understanding its intrinsic radiation characteristics, and in particular the single event effect (SEE) characteristics of the high bandwidth HBT based circuits. IBM is now manufacturing in its 3rd generation of their commercial SiGe processes, and access is currently available to the first two generations (known as and 6HP) through the MOSIS shared mask services with anticipated future release of the latest (7HP) process. The 5 HP process is described and is characterized by a emitter spacing of 0.5 micron and a cutoff frequency ff of 50 GHz, whereas the fully scaled 7HP HBT employs a 0.18 micron emitter and has an fT of 120 GHz. Previous investigations have the examined SEE response of 5 HP HBT circuits through both circuit testing and modeling. Charge collection modeling studies in the 5 H P process have also been conducted, but to date no measurements have been reported of charge collection in any SiGe HBT structures. Nor have circuit models for charge collection been developed in any version other than the 5 HP HBT structure. Our investigation reports the first indications of both charge collection and circuit response in IBM s 7HP-based SiGe process. We compare broad beam heavy ion SEU test results in a fully function Pseudo-Random Number (PRN) sequence generator up to frequencies of 12 Gbps versus effective LET, and also report proton test results in the same circuit. In addition, we examine the charge collection characteristics of individual 7HP HBT

  17. Recent progress in photoactive organic field-effect transistors

    Directory of Open Access Journals (Sweden)

    Yutaka Wakayama

    2014-04-01

    Full Text Available Recent progress in photoactive organic field-effect transistors (OFETs is reviewed. Photoactive OFETs are divided into light-emitting (LE and light-receiving (LR OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.

  18. Recent progress in photoactive organic field-effect transistors.

    Science.gov (United States)

    Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok

    2014-04-01

    Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.

  19. Spin gated transistors for reprogrammable logic

    Science.gov (United States)

    Ciccarelli, Chiara; Gonzalez-Zalba, Fernando; Irvine, Andrew; Campion, Richard; Zarbo, Liviu; Gallagher, Brian; Ferguson, Andrew; Jungwirth, Tomas; Wunderlich, Joerg; Institute of Physics ASCR Collaboration; University of Nottingham Collaboration; Hitachi Cambridge Laboratory Team; Institute of Physics ASCR Collaboration; University of Nottingham Collaboration; University of Cambridge Team

    2014-03-01

    In spin-orbit coupled magnetic materials the chemical potential depends on the orientation of the magnetisation. By making the gate of a field effect transistor magnetic, it is possible to tune the channel conductance not only electrically but also magnetically. We show that these magnetic transistor can be used to realise non-volatile reprogrammable Boolean logic. The non-volatile reconfigurable capability resides in the magnetization-dependent band structure of the magnetic stack. A change in magnetization orientation produces a change in the electrochemical potential, which induces a charge accumulation in the correspondent gate electrode. This is readily sensed by a field-effect device such as standard field-effect transistors or more exotic single-electron transistors. We propose circuits for low power consumption applications that can be magnetically switched between NAND and OR logic functions and between NOR and AND logic functions.

  20. Machine learning approach for single molecule localisation microscopy.

    Science.gov (United States)

    Colabrese, Silvia; Castello, Marco; Vicidomini, Giuseppe; Del Bue, Alessio

    2018-04-01

    Single molecule localisation (SML) microscopy is a fundamental tool for biological discoveries; it provides sub-diffraction spatial resolution images by detecting and localizing "all" the fluorescent molecules labeling the structure of interest. For this reason, the effective resolution of SML microscopy strictly depends on the algorithm used to detect and localize the single molecules from the series of microscopy frames. To adapt to the different imaging conditions that can occur in a SML experiment, all current localisation algorithms request, from the microscopy users, the choice of different parameters. This choice is not always easy and their wrong selection can lead to poor performance. Here we overcome this weakness with the use of machine learning. We propose a parameter-free pipeline for SML learning based on support vector machine (SVM). This strategy requires a short supervised training that consists in selecting by the user few fluorescent molecules (∼ 10-20) from the frames under analysis. The algorithm has been extensively tested on both synthetic and real acquisitions. Results are qualitatively and quantitatively consistent with the state of the art in SML microscopy and demonstrate that the introduction of machine learning can lead to a new class of algorithms competitive and conceived from the user point of view.

  1. A transistor based on 2D material and silicon junction

    Science.gov (United States)

    Kim, Sanghoek; Lee, Seunghyun

    2017-07-01

    A new type of graphene-silicon junction transistor based on bipolar charge-carrier injection was designed and investigated. In contrast to many recent studies on graphene field-effect transistor (FET), this device is a new type of bipolar junction transistor (BJT). The transistor fully utilizes the Fermi level tunability of graphene under bias to increase the minority-carrier injection efficiency of the base-emitter junction in the BJT. Single-layer graphene was used to form the emitter and the collector, and a p-type silicon was used as the base. The output of this transistor was compared with a metal-silicon junction transistor ( i.e. surface-barrier transistor) to understand the difference between a graphene-silicon junction and metal-silicon Schottky junction. A significantly higher current gain was observed in the graphene-silicon junction transistor as the base current was increased. The graphene-semiconductor heterojunction transistor offers several unique advantages, such as an extremely thin device profile, a low-temperature (transistor current gain ( β) of 33.7 and a common-emitter amplifier voltage gain of 24.9 were achieved.

  2. SILC for SILC: Single Institution Learning Curve for Single-Incision Laparoscopic Cholecystectomy

    Directory of Open Access Journals (Sweden)

    Chee Wei Tay

    2013-01-01

    Full Text Available Objectives. We report the single-incision laparoscopic cholecystectomy (SILC learning experience of 2 hepatobiliary surgeons and the factors that could influence the learning curve of SILC. Methods. Patients who underwent SILC by Surgeons A and B were studied retrospectively. Operating time, conversion rate, reason for conversion, identity of first assistants, and their experience with previous laparoscopic cholecystectomy (LC were analysed. CUSUM analysis is used to identify learning curve. Results. Hundred and nineteen SILC cases were performed by Surgeons A and B, respectively. Eight cases required additional port. In CUSUM analysis, most conversion occurred during the first 19 cases. Operating time was significantly lower (62.5 versus 90.6 min, P = 0.04 after the learning curve has been overcome. Operating time decreases as the experience increases, especially Surgeon B. Most conversions are due to adhesion at Calot’s triangle. Acute cholecystitis, patients’ BMI, and previous surgery do not seem to influence conversion rate. Mean operating times of cases assisted by first assistant with and without LC experience were 48 and 74 minutes, respectively (P = 0.004. Conclusion. Nineteen cases are needed to overcome the learning curve of SILC. Team work, assistant with CLC experience, and appropriate equipment and technique are the important factors in performing SILC.

  3. Nanoscale Vacuum Channel Transistor.

    Science.gov (United States)

    Han, Jin-Woo; Moon, Dong-Il; Meyyappan, M

    2017-04-12

    Vacuum tubes that sparked the electronics era had given way to semiconductor transistors. Despite their faster operation and better immunity to noise and radiation compared to the transistors, the vacuum device technology became extinct due to the high power consumption, integration difficulties, and short lifetime of the vacuum tubes. We combine the best of vacuum tubes and modern silicon nanofabrication technology here. The surround gate nanoscale vacuum channel transistor consists of sharp source and drain electrodes separated by sub-50 nm vacuum channel with a source to gate distance of 10 nm. This transistor performs at a low voltage (3 microamperes). The nanoscale vacuum channel transistor can be a possible alternative to semiconductor transistors beyond Moore's law.

  4. Learning curve, diagnostic yield and safety of single balloon enteroscopy.

    Science.gov (United States)

    Dutta, Amit Kumar; Sajith, Kattiparambil Gangadharan; Joseph, Anjilivelil J; Simon, Ebby George; Chacko, Ashok

    2012-01-01

    Single balloon enteroscopy (SBE) is a recently developed diagnostic modality to assess small bowel mucosa. The data on learning curve of SBE is scanty. We aimed to assess the learning curve, diagnostic yield and safety of SBE. All patients who underwent SBE at our centre from December 2007 to December 2010 were included retrospectively. The clinical details, enteroscopy findings and procedure related details were obtained for each patient from a prospectively maintained database. The extent of small bowel visualised with increasing number of procedures by a single endoscopist (Endoscopist A) who performed most of the procedures was used to estimate the learning curve using locally weighted regression curve. The diagnostic yield and complications rates of SBE were also estimated. The study was approved by the institute review board and ethics committee. Ninety SBEs were performed in 84 patients (age: 42+15 years, 27.4% females). 57 procedures were performed (32 antegrade and 25 retrograde) by endoscopist A. There was gradual improvement in the extent of small bowel visualised during the first 15 procedures via antegrade route followed by flattening of curve. The retrograde route showed no definite trend towards improvement during the procedures performed. The overall diagnostic yield of SBE was 32.1%. There was no complication except for mild self-limiting abdominal pain in one patient. SBE via antegrade route has a higher success rate and better learning curve than the retrograde route. SBE is a safe procedure and helps in establishing a diagnosis in one-third of the patients examined.

  5. Ambipolar MoS2 Thin Flake Transistors

    NARCIS (Netherlands)

    Zhang, Yijin; Ye, Jianting; Matsuhashi, Yusuke; Iwasa, Yoshihiro

    Field effect transistors (FETs) made of thin flake single crystals isolated from layered materials have attracted growing interest since the success of graphene. Here, we report the fabrication of an electric double layer transistor (EDLT, a FET gated by ionic liquids) using a thin flake of MoS2, a

  6. Light-emitting ambipolar organic heterostructure field-effect transistor

    NARCIS (Netherlands)

    Rost, Constance; Karg, Siegfried; Riess, Walter; Loi, Maria Antonietta; Murgia, Mauro; Muccini, Michele

    2004-01-01

    We have investigated ambipolar charge injection and transport in organic field-effect transistors (OFETs) as prerequisites for a light-emitting organic field-effect transistor (LEOFET). OFETs containing a single material as active layer generally function either as a p- or an n-channel device.

  7. High-voltage (100 V) ChipfilmTM single-crystal silicon LDMOS transistor for integrated driver circuits in flexible displays

    OpenAIRE

    J. N. Burghartz; H. Richter; A. Asif

    2009-01-01

    System-in-Foil (SiF) is an emerging field of large-area polymer electronics that employs new materials such as conductive polymers and electrophoretic micro-capsules (E-Ink) along with ultra-thin and thus flexible chips. In flexible displays, the integration of gate and source drivers onto the flexible part increases the yield and enhances the reliability of the system. In this work we propose a high-voltage ChipfilmTM lateral diffused MOS transistor (LDMOS) structur...

  8. Optical reading of field-effect transistors by phase-space absorption quenching in a single InGaAs quantum well conducting channel

    Science.gov (United States)

    Chemla, D. S.; Bar-Joseph, I.; Klingshirn, C.; Miller, D. A. B.; Kuo, J. M.

    1987-03-01

    Absorption switching in a semiconductor quantum well by electrically varying the charge density in the quantum well conducting channel of a selectively doped heterostructure transistor is reported for the first time. The phase-space absorption quenching (PAQ) is observed at room temperature in an InGaAs/InAlAs grown on InP FET, and it shows large absorption coefficient changes with relatively broad spectral bandwidth. This PAQ is large enough to be used for direct optical determination of the logic state of the FET.

  9. Fundamentals of RF and microwave transistor amplifiers

    CERN Document Server

    Bahl, Inder J

    2009-01-01

    A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help read

  10. Sub-second photonic processing of solution-deposited single layer and heterojunction metal oxide thin-film transistors using a high-power xenon flash lamp

    KAUST Repository

    Tetzner, Kornelius

    2017-11-01

    We report the fabrication of solution-processed In2O3 and In2O3/ZnO heterojunction thin-film transistors (TFTs) where the precursor materials were converted to their semiconducting state using high power light pulses generated by a xenon flash lamp. In2O3 TFTs prepared on glass substrates exhibited low-voltage operation (≤2 V) and a high electron mobility of ∼6 cm2 V−1 s−1. By replacing the In2O3 layer with a photonically processed In2O3/ZnO heterojunction, we were able to increase the electron mobility to 36 cm2 V−1 s−1, while maintaining the low-voltage operation. Although the level of performance achieved in these devices is comparable to control TFTs fabricated via thermal annealing at 250 °C for 1 h, the photonic treatment approach adopted here is extremely rapid with a processing time of less than 18 s per layer. With the aid of a numerical model we were able to analyse the temperature profile within the metal oxide layer(s) upon flashing revealing a remarkable increase of the layer\\'s surface temperature to ∼1000 °C within ∼1 ms. Despite this, the backside of the glass substrate remains unchanged and close to room temperature. Our results highlight the applicability of the method for the facile manufacturing of high performance metal oxide transistors on inexpensive large-area substrates.

  11. Learning Layouts for Single-Page Graphic Designs.

    Science.gov (United States)

    O'Donovan, Peter; Agarwala, Aseem; Hertzmann, Aaron

    2014-08-01

    This paper presents an approach for automatically creating graphic design layouts using a new energy-based model derived from design principles. The model includes several new algorithms for analyzing graphic designs, including the prediction of perceived importance, alignment detection, and hierarchical segmentation. Given the model, we use optimization to synthesize new layouts for a variety of single-page graphic designs. Model parameters are learned with Nonlinear Inverse Optimization (NIO) from a small number of example layouts. To demonstrate our approach, we show results for applications including generating design layouts in various styles, retargeting designs to new sizes, and improving existing designs. We also compare our automatic results with designs created using crowdsourcing and show that our approach performs slightly better than novice designers.

  12. EDITORIAL: Reigniting innovation in the transistor Reigniting innovation in the transistor

    Science.gov (United States)

    Demming, Anna

    2012-09-01

    sensitive to gases such as CO, opening opportunities for applications in sensing using one-dimensional nanostructure transistors [12]. The pyroelectric transistor reported in this issue represents an intriguing development for device applications of this versatile and ubiquitous electronics component [3]. As the researchers point out, 'By combining the photocurrent feature and optothermal gating effect, the wide range of response to light covering ultraviolet and infrared radiation can lead to new nanoscale optoelectronic devices that are suitable for remote or wireless applications.' In nanotechnology research and development, often the race is on to achieve reliable device behaviour in the smallest possible systems. But sometimes it is the innovations in the approach used that revolutionize technology in industry. The pyroelectric transistor reported in this issue is a neat example of the ingenious innovations in this field of research. While in research the race is never really over, as this work demonstrates the journey itself remains an inspiration. References [1] Bardeen J and Brattain W H 1948 The transistor, a semi-conductor triode Phys. Rev 74 230-1 [2] Shockley W B, Bardeen J and Brattain W H 1956 The nobel prize in physics www.nobelprize.org/nobel_prizes/physics/laureates/1956/# [3] Hsieh C-Y, Lu M-L, Chen J-Y, Chen Y-T, Chen Y-F, Shih W Y and Shih W-H 2012 Single ZnO nanowire-PZT optothermal field effect transistors Nanotechnology 23 355201 [4] Tans S J, Verschueren A R M and Dekker C 1998 Room-temperature transistor based on a single carbon nanotube Nature 393 49-52 [5] Cui Y, Zhong Z, Wang D, Wang W U and Lieber C M 2003 High performance silicon nanowire field effect transistors Nano Lett. 3 149-52 [6]Stafford C A, Cardamone D M and Mazumdar S 2007 The quantum interference effect transistor Nanotechnology 18 424014 [7] Garnier F, Hajlaoui R, Yassar A and Srivastava P 1994 All-polymer field-effect transistor realized by printing techniques Science 265 1684-6 [8

  13. Ballistic Phosphorene Transistor

    Science.gov (United States)

    2015-11-19

    satisfactory. W911NF-14-1-0572 -II 66414-EL-II.3 TO:(1) Electronics Division (Qiu, Joe) TITLE: Final Report: Ballistic Phosphorene Transistor (x) Material... Transistor ” as a STIP award for the period 09/1/2014 through 5/31/2015. The ARO program director responsible for the grant is Dr. Joe Qiu. The PI is Prof...UU 19-11-2015 1-Sep-2014 31-May-2015 Approved for Public Release; Distribution Unlimited Final Report: Ballistic Phosphorene Transistor The views

  14. Vertical organic transistors

    Science.gov (United States)

    Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

    2015-11-01

    Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted.

  15. High Accuracy Transistor Compact Model Calibrations

    Energy Technology Data Exchange (ETDEWEB)

    Hembree, Charles E. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Mar, Alan [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States); Robertson, Perry J. [Sandia National Laboratories (SNL-NM), Albuquerque, NM (United States)

    2015-09-01

    Typically, transistors are modeled by the application of calibrated nominal and range models. These models consists of differing parameter values that describe the location and the upper and lower limits of a distribution of some transistor characteristic such as current capacity. Correspond- ingly, when using this approach, high degrees of accuracy of the transistor models are not expected since the set of models is a surrogate for a statistical description of the devices. The use of these types of models describes expected performances considering the extremes of process or transistor deviations. In contrast, circuits that have very stringent accuracy requirements require modeling techniques with higher accuracy. Since these accurate models have low error in transistor descriptions, these models can be used to describe part to part variations as well as an accurate description of a single circuit instance. Thus, models that meet these stipulations also enable the calculation of quantifi- cation of margins with respect to a functional threshold and uncertainties in these margins. Given this need, new model high accuracy calibration techniques for bipolar junction transis- tors have been developed and are described in this report.

  16. Intégration de transistor mono-électronique et transistor à atome unique sur CMOS

    OpenAIRE

    Deshpande, Veeresh

    2012-01-01

    Continuous scaling of MOSFET dimensions has led us to the era of nanoelectronics. Multigate FET (MuGFET) architecture with ‘nanowire channel' is being considered as one feasible enabler of MOSFET scaling to end-of-roadmap. Alongside classical CMOS or Moore's law scaling, many novel device proposals exploiting nanoscale phenomena have been made either. Single Electron Transistor (SET), with its unique ‘Coulomb Blockade' phenomena, and Single Atom Transistor (SAT), as an ultimately scaled trans...

  17. Transistor-based interface circuitry

    Science.gov (United States)

    Taubman, Matthew S [Richland, WA

    2004-02-24

    Among the embodiments of the present invention is an apparatus that includes a transistor, a servo device, and a current source. The servo device is operable to provide a common base mode of operation of the transistor by maintaining an approximately constant voltage level at the transistor base. The current source is operable to provide a bias current to the transistor. A first device provides an input signal to an electrical node positioned between the emitter of the transistor and the current source. A second device receives an output signal from the collector of the transistor.

  18. Diode, transistor & fet circuits manual

    CERN Document Server

    Marston, R M

    2013-01-01

    Diode, Transistor and FET Circuits Manual is a handbook of circuits based on discrete semiconductor components such as diodes, transistors, and FETS. The book also includes diagrams and practical circuits. The book describes basic and special diode characteristics, heat wave-rectifier circuits, transformers, filter capacitors, and rectifier ratings. The text also presents practical applications of associated devices, for example, zeners, varicaps, photodiodes, or LEDs, as well as it describes bipolar transistor characteristics. The transistor can be used in three basic amplifier configuration

  19. Transistor scaling with novel materials

    OpenAIRE

    Meikei Ieong; Vijay Narayanan; Dinkar Singh; Anna Topol; Victor Chan; Zhibin Ren

    2006-01-01

    Complementary metal-oxide-semiconductor (CMOS) transistor scaling will continue for at least another decade. However, innovation in transistor structures and integration of novel materials are needed to sustain this performance trend. Here we discuss the challenges and opportunities of transistor scaling for the next five to ten years.

  20. Quantum Thermal Transistor.

    Science.gov (United States)

    Joulain, Karl; Drevillon, Jérémie; Ezzahri, Younès; Ordonez-Miranda, Jose

    2016-05-20

    We demonstrate that a thermal transistor can be made up with a quantum system of three interacting subsystems, coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control the thermal currents at the collector and at the emitter with the imposed thermal current at the base. This is achieved by determining the heat fluxes by means of the strong-coupling formalism. For the case of three interacting spins, in which one of them is coupled to the other two, that are not directly coupled, it is shown that high amplification can be obtained in a wide range of energy parameters and temperatures. The proposed quantum transistor could, in principle, be used to develop devices such as a thermal modulator and a thermal amplifier in nanosystems.

  1. Surveying Assessment in Experiential Learning: A Single Campus Study

    Directory of Open Access Journals (Sweden)

    Thomas Yates

    2015-12-01

    Full Text Available The purpose of this study was to determine the methods of experiential assessment in use at a Canadian university and the extent to which they are used. Exploring experiential assessment will allow identification of commonly used methods and facilitate the development of best practices of assessment in the context of experiential learning (EL at an institutional level. The origins of EL are found in the work of Dewey (1938, later modified by Kolb and Fry (1975. Experiential methods include: experiential education, service learning problem-based learning and others such as action learning, enquiry-based learning, and case studies. Faculty currently involved in EL at the participating university were invited to complete an online survey about their teaching and assessment methods. This paper will share the results and analysis of the EL inventory survey.

  2. Spin-torque transistor

    NARCIS (Netherlands)

    Bauer, G.E.W.; Brataas, A.; Tserkovnyak, Y.; Van Wees, B.J.

    2003-01-01

    A magnetoelectronic thin-film transistor is proposed that can display negative differential resistance and gain. The working principle is the modulation of the soure–drain current in a spin valve by the magnetization of a third electrode, which is rotated by the spin-torque created by a control spin

  3. Learning Effectiveness and Cognitive Loads in Instructional Materials of Programming Language on Single and Dual Screens

    Science.gov (United States)

    Hsu, Jenq-Muh; Chang, Ting-Wen; Yu, Pao-Ta

    2012-01-01

    The teaching and learning environment in a traditional classroom typically includes a projection screen, a projector, and a computer within a digital interactive table. Instructors may apply multimedia learning materials using various information communication technologies to increase interaction effects. However, a single screen only displays a…

  4. Learning transitive verbs from single-word verbs in the input by young children acquiring English.

    Science.gov (United States)

    Ninio, Anat

    2016-09-01

    The environmental context of verbs addressed by adults to young children is claimed to be uninformative regarding the verbs' meaning, yielding the Syntactic Bootstrapping Hypothesis that, for verb learning, full sentences are needed to demonstrate the semantic arguments of verbs. However, reanalysis of Gleitman's (1990) original data regarding input to a blind child revealed the context of single-word parental verbs to be more transparent than that of sentences. We tested the hypothesis that English-speaking children learn their early verbs from parents' single-word utterances. Distribution of single-word transitive verbs produced by a large sample of young children was strongly predicted by the relative token frequency of verbs in parental single-word utterances, but multiword sentences had no predictive value. Analysis of the interactive context showed that objects of verbs are retrievable by pragmatic inference, as is the meaning of the verbs. Single-word input appears optimal for learning an initial vocabulary of verbs.

  5. Surveying Assessment in Experiential Learning: A Single Campus Study

    Science.gov (United States)

    Yates, Thomas; Wilson, Jay; Purton, Kendra

    2015-01-01

    The purpose of this study was to determine the methods of experiential assessment in use at a Canadian university and the extent to which they are used. Exploring experiential assessment will allow identification of commonly used methods and facilitate the development of best practices of assessment in the context of experiential learning (EL) at…

  6. Bipolar junction transistor models for circuit simulation of cosmic-ray-induced soft errors

    Science.gov (United States)

    Benumof, R.; Zoutendyk, J.

    1984-01-01

    This paper examines bipolar junction transistor models suitable for calculating the effects of large excursions of some of the variables determining the operation of a transistor. Both the Ebers-Moll and Gummel-Poon models are studied, and the junction and diffusion capacitances are evaluated on the basis of the latter model. The most interesting result of this analysis is that a bipolar junction transistor when struck by a cosmic particle may cause a single event upset in an electronic circuit if the transistor is operated at a low forward base-emitter bias.

  7. TRANSISTOR HIGH VOLTAGE POWER SUPPLY

    Science.gov (United States)

    Driver, G.E.

    1958-07-15

    High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

  8. Organic electrochemical transistors

    KAUST Repository

    Rivnay, Jonathan

    2018-01-16

    Organic electrochemical transistors (OECTs) make effective use of ion injection from an electrolyte to modulate the bulk conductivity of an organic semiconductor channel. The coupling between ionic and electronic charges within the entire volume of the channel endows OECTs with high transconductance compared with that of field-effect transistors, but also limits their response time. The synthetic tunability, facile deposition and biocompatibility of organic materials make OECTs particularly suitable for applications in biological interfacing, printed logic circuitry and neuromorphic devices. In this Review, we discuss the physics and the mechanism of operation of OECTs, focusing on their identifying characteristics. We highlight organic materials that are currently being used in OECTs and survey the history of OECT technology. In addition, form factors, fabrication technologies and applications such as bioelectronics, circuits and memory devices are examined. Finally, we take a critical look at the future of OECT research and development.

  9. Mesoscopic photon heat transistor

    DEFF Research Database (Denmark)

    Ojanen, T.; Jauho, Antti-Pekka

    2008-01-01

    We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit-leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir-Wingreen-Landauer-typ......We show that the heat transport between two bodies, mediated by electromagnetic fluctuations, can be controlled with an intermediate quantum circuit-leading to the device concept of a mesoscopic photon heat transistor (MPHT). Our theoretical analysis is based on a novel Meir......-Wingreen-Landauer-type of conductance formula, which gives the photonic heat current through an arbitrary circuit element coupled to two dissipative reservoirs at finite temperatures. As an illustration we present an exact solution for the case when the intermediate circuit can be described as an electromagnetic resonator. We discuss...

  10. Metatronic transistor amplifier

    Science.gov (United States)

    Chettiar, Uday K.; Engheta, Nader

    2015-10-01

    Utilizing the notion of metamaterials, in recent years the concept of a circuit and lumped circuit elements have been extended to the optical domains, providing the paradigm of optical metatronics, i.e., metamaterial-inspired optical nanocircuitry, as a powerful tool for design and study of more complex systems at the nanoscale. In this paper we present a design for a new metatronic element, namely, a metatronic transistor that functions as an amplifier. As shown by our analytical and numerical paper here, this metatronic transistor provides gain as well as isolation between the input and output ports of such two-port device. The cascadability and fan-out aspects of this element are also explored.

  11. Organic electrochemical transistors

    Science.gov (United States)

    Rivnay, Jonathan; Inal, Sahika; Salleo, Alberto; Owens, Róisín M.; Berggren, Magnus; Malliaras, George G.

    2018-02-01

    Organic electrochemical transistors (OECTs) make effective use of ion injection from an electrolyte to modulate the bulk conductivity of an organic semiconductor channel. The coupling between ionic and electronic charges within the entire volume of the channel endows OECTs with high transconductance compared with that of field-effect transistors, but also limits their response time. The synthetic tunability, facile deposition and biocompatibility of organic materials make OECTs particularly suitable for applications in biological interfacing, printed logic circuitry and neuromorphic devices. In this Review, we discuss the physics and the mechanism of operation of OECTs, focusing on their identifying characteristics. We highlight organic materials that are currently being used in OECTs and survey the history of OECT technology. In addition, form factors, fabrication technologies and applications such as bioelectronics, circuits and memory devices are examined. Finally, we take a critical look at the future of OECT research and development.

  12. Ion bipolar junction transistors.

    Science.gov (United States)

    Tybrandt, Klas; Larsson, Karin C; Richter-Dahlfors, Agneta; Berggren, Magnus

    2010-06-01

    Dynamic control of chemical microenvironments is essential for continued development in numerous fields of life sciences. Such control could be achieved with active chemical circuits for delivery of ions and biomolecules. As the basis for such circuitry, we report a solid-state ion bipolar junction transistor (IBJT) based on conducting polymers and thin films of anion- and cation-selective membranes. The IBJT is the ionic analogue to the conventional semiconductor BJT and is manufactured using standard microfabrication techniques. Transistor characteristics along with a model describing the principle of operation, in which an anionic base current amplifies a cationic collector current, are presented. By employing the IBJT as a bioelectronic circuit element for delivery of the neurotransmitter acetylcholine, its efficacy in modulating neuronal cell signaling is demonstrated.

  13. Transfer in motion discrimination learning was no greater in double training than in single training.

    Science.gov (United States)

    Huang, Jinfeng; Liang, Ju; Zhou, Yifeng; Liu, Zili

    2017-06-01

    We investigated the controversy regarding double training in motion discrimination learning. We collected data from 43 participants in a motion direction discrimination learning task with either double training (i.e., training plus exposure) or single training (i.e., no exposure). By pooling these data with those in the literature, we had data in double training from 28 participants and in single training from 36 participants. We found that, in double training, the transfer along the exposed direction was less than that along the trained direction, indicating incomplete transfer. Importantly, the transfer in double training was not reliably greater than that in single training.

  14. Racing to learn: statistical inference and learning in a single spiking neuron with adaptive kernels.

    Science.gov (United States)

    Afshar, Saeed; George, Libin; Tapson, Jonathan; van Schaik, André; Hamilton, Tara J

    2014-01-01

    This paper describes the Synapto-dendritic Kernel Adapting Neuron (SKAN), a simple spiking neuron model that performs statistical inference and unsupervised learning of spatiotemporal spike patterns. SKAN is the first proposed neuron model to investigate the effects of dynamic synapto-dendritic kernels and demonstrate their computational power even at the single neuron scale. The rule-set defining the neuron is simple: there are no complex mathematical operations such as normalization, exponentiation or even multiplication. The functionalities of SKAN emerge from the real-time interaction of simple additive and binary processes. Like a biological neuron, SKAN is robust to signal and parameter noise, and can utilize both in its operations. At the network scale neurons are locked in a race with each other with the fastest neuron to spike effectively "hiding" its learnt pattern from its neighbors. The robustness to noise, high speed, and simple building blocks not only make SKAN an interesting neuron model in computational neuroscience, but also make it ideal for implementation in digital and analog neuromorphic systems which is demonstrated through an implementation in a Field Programmable Gate Array (FPGA). Matlab, Python, and Verilog implementations of SKAN are available at: http://www.uws.edu.au/bioelectronics_neuroscience/bens/reproducible_research.

  15. Polarization induced doped transistor

    Science.gov (United States)

    Xing, Huili; Jena, Debdeep; Nomoto, Kazuki; Song, Bo; Zhu, Mingda; Hu, Zongyang

    2016-06-07

    A nitride-based field effect transistor (FET) comprises a compositionally graded and polarization induced doped p-layer underlying at least one gate contact and a compositionally graded and doped n-channel underlying a source contact. The n-channel is converted from the p-layer to the n-channel by ion implantation, a buffer underlies the doped p-layer and the n-channel, and a drain underlies the buffer.

  16. Highly stable carbon nanotube top-gate transistors with tunable threshold voltage

    NARCIS (Netherlands)

    Wang, H.; Cobb, B.; Breemen, A. van; Gelinck, G.H.; Bao, Z.

    2014-01-01

    Carbon-nanotube top-gate transistors with fluorinated dielectrics are presented. With PTrFE as the dielectric, the devices have absent or small hysteresis at different sweep rates and excellent bias-stress stability under ambient conditions. Ambipolar single-walled carbon nanotube (SWNT) transistors

  17. Pass-transistor asynchronous sequential circuits

    Science.gov (United States)

    Whitaker, Sterling R.; Maki, Gary K.

    1989-01-01

    Design methods for asynchronous sequential pass-transistor circuits, which result in circuits that are hazard- and critical-race-free and which have added degrees of freedom for the input signals, are discussed. The design procedures are straightforward and easy to implement. Two single-transition-time state assignment methods are presented, and hardware bounds for each are established. A surprising result is that the hardware realizations for each next state variable and output variable is identical for a given flow table. Thus, a state machine with N states and M outputs can be constructed using a single layout replicated N + M times.

  18. Can zebrafish learn spatial tasks? An empirical analysis of place and single CS-US associative learning.

    Science.gov (United States)

    Karnik, Indraneel; Gerlai, Robert

    2012-08-01

    The zebrafish may be an ideal tool with which genes underlying learning and memory can be identified and functionally investigated. From a translational viewpoint, relational learning and episodic memory are particularly important as their impairment is the hallmark of prevalent human neurodegenerative diseases. Recent reports suggest that zebrafish are capable of solving complex relational-type associative learning tasks, namely spatial learning tasks. However, it is not known whether good performance in these tasks was truly based upon relational learning or upon a single CS-US association. Here we study whether zebrafish can find a rewarding stimulus (sight of conspecifics) based upon a single associative cue or/and upon the location of the reward using a method conceptually similar to 'context and cue dependent fear conditioning' employed with rodents. Our results confirm that zebrafish can form an association between a salient visual cue and the rewarding stimulus and at the same time they can also learn where the reward is presented. Although our results do not prove that zebrafish form a dynamic spatial map of their surroundings and use this map to locate their reward, they do show that these fish perform similarly to rodents whose hippocampal function is unimpaired. These results further strengthen the notion that complex cognitive abilities exist in the zebrafish and thus they may be analyzed using the excellent genetic tool set developed for this simple vertebrate. Copyright © 2012 Elsevier B.V. All rights reserved.

  19. Learning to Predict Indoor Illumination from a Single Image

    OpenAIRE

    Gardner, Marc-André; Sunkavalli, Kalyan; Yumer, Ersin; Shen, Xiaohui; Gambaretto, Emiliano; Gagné, Christian; Lalonde, Jean-François

    2017-01-01

    We propose an automatic method to infer high dynamic range illumination from a single, limited field-of-view, low dynamic range photograph of an indoor scene. In contrast to previous work that relies on specialized image capture, user input, and/or simple scene models, we train an end-to-end deep neural network that directly regresses a limited field-of-view photo to HDR illumination, without strong assumptions on scene geometry, material properties, or lighting. We show that this can be acco...

  20. Cyano-substituted oligo(p-phenylene vinylene) single-crystal with balanced hole and electron injection and transport for ambipolar field-effect transistors.

    Science.gov (United States)

    Deng, Jian; Tang, Jia; Xu, Yuanxiang; Liu, Liqun; Wang, Yan; Xie, Zengqi; Ma, Yuguang

    2015-02-07

    High and balanced hole and electron mobilities were achieved in OFETs based on the high photoluminescence of a 1,4-bis(2-cyano-2-phenylethenyl)benzene single-crystal with symmetric electrodes. For electron and hole, the operation voltage in the OFETs based on symmetric gold electrodes was 30 and -20 V, respectively. The accumulation threshold voltage is low enough for the OFETs to operate in an ambipolar model with the source/drain voltage (Vds) around 50 V despite the high injection barrier. The highest electron and hole mobility was 0.745 cm(2) V(-1) s(-1) and 0.239 cm(2) V(-1) s(-1), and the current density reached 90.7 and 27.4 A cm(-2), respectively with an assumed 10 nm accumulation layer. The high mobility comes from the strong π-π interactions. In addition, the highly ordered hydrogen bonding matrix may create an efficient route to pump the charge to the inner layer which can improve the injection ability.

  1. Learning Curve for Laparoendoscopic Single-Incision Live Donor Nephrectomy: Implications for Laparoendoscopic Practice and Training.

    Science.gov (United States)

    Troppmann, Christoph; Santhanakrishnan, Chandrasekar; Fananapazir, Ghaneh; Troppmann, Kathrin M; Perez, Richard V

    2017-05-01

    The learning curve for laparoendoscopic single-incision live donor nephrectomy, which is technically more complex than the multiport, conventional laparoendoscopic approach, is unknown. In a retrospective cohort study, we analyzed the learning curve of the initial 114 consecutive single-incision laparoendoscopic nephrectomies performed in nonselected live kidney donors. Median donor body mass index was 26 kg/m 2 (range 20-34). In all, 92% of the nephrectomies were performed on the left side; 18% of the recovered kidneys had multiple renal arteries. Cumulative sum (CUSUM) analysis of operating time (OT) demonstrated that the learning curve was achieved after case 61. For the learning curve phase (Group 1 [cases 1-61]) vs the postlearning phase (Group 2 [cases 62-114]), the difference of the mean OT was 20 minutes (p = 0.05). Mean warm ischemic time in the donors was significantly longer during the learning phase (Group 1, 6 minutes; Group 2, 5 minutes; p = 0.04). Rates of conversions to multiport procedures and of donor complications were not significantly different between Groups 1 and 2. For the recipients, we observed delayed graft function in 2 (2%) cases, no technical graft losses; and 1-year death-censored graft survival was 100% (p = n.s. for all comparisons of Group 1 vs 2). Single-incision laparoendoscopic donor nephrectomy had a long learning curve (>60 cases), but resulted in excellent donor and recipient outcomes. The long learning curve has significant implications for the programs and surgeons who contemplate transitioning from multiport to single-incision nephrectomy. Furthermore, our observations are highly relevant for informing the development of training requirements for fellows to be trained in single-incision laparoendoscopic nephrectomy.

  2. Vertical Ge/Si Core/Shell Nanowire Junctionless Transistor.

    Science.gov (United States)

    Chen, Lin; Cai, Fuxi; Otuonye, Ugo; Lu, Wei D

    2016-01-13

    Vertical junctionless transistors with a gate-all-around (GAA) structure based on Ge/Si core/shell nanowires epitaxially grown and integrated on a ⟨111⟩ Si substrate were fabricated and analyzed. Because of efficient gate coupling in the nanowire-GAA transistor structure and the high density one-dimensional hole gas formed in the Ge nanowire core, excellent P-type transistor behaviors with Ion of 750 μA/μm were obtained at a moderate gate length of 544 nm with minimal short-channel effects. The experimental data can be quantitatively modeled by a GAA junctionless transistor model with few fitting parameters, suggesting the nanowire transistors can be fabricated reliably without introducing additional factors that can degrade device performance. Devices with different gate lengths were readily obtained by tuning the thickness of an etching mask film. Analysis of the histogram of different devices yielded a single dominate peak in device parameter distribution, indicating excellent uniformity and high confidence of single nanowire operation. Using two vertical nanowire junctionless transistors, a PMOS-logic inverter with near rail-to-rail output voltage was demonstrated, and device matching in the logic can be conveniently obtained by controlling the number of nanowires employed in different devices rather than modifying device geometry. These studies show that junctionless transistors based on vertical Ge/Si core/shell nanowires can be fabricated in a controlled fashion with excellent performance and may be used in future hybrid, high-performance circuits where bottom-up grown nanowire devices with different functionalities can be directly integrated with an existing Si platform.

  3. Learning and Correcting Robot Trajectory Keypoints from a Single Demonstration

    DEFF Research Database (Denmark)

    Juan, Iñigo Iturrate San; Østergaard, Esben Hallundbæk; Rytter, Martin

    2017-01-01

    of a trajectory from a single demonstration. Additionally, by utilizing velocity information in the task space, the method is able to achieve a level of precision that is sufficient for industrial assembly tasks. Along with this, we present a user study that shows that our method enables non-expert robot users......Kinesthetic teaching provides an accessible way for non-experts to quickly and easily program a robot system by demonstration. A crucial aspect of this technique is to obtain an accurate approximation of the robot’s intended trajectory for the task, while filtering out spurious aspects...... to successfully program the robot for an assembly benchmark, and that they find this method intuitive....

  4. What Can US Single-Payer Supporters Learn From the Swiss Rejection of Single Payer?

    Science.gov (United States)

    Chaufan, Claudia

    2016-01-01

    On September 27, 2014, Swiss voters rejected a proposal to replace their system of about 60 health insurance companies offering mandatory basic health coverage with a single public insurer, the state, which would offer taxpayer-funded coverage of all medically necessary care. The Swiss and the U.S. media, academia, and business sectors, from conservative and liberal camps, interpreted the results to mean a rejection of single payer and a preference for a privately run system, with important implications for health reform in the United States. While on the surface mainstream interpretations appear reasonable, I argue that they have little basis on fact because they rely on assumptions that, while untrue, are repeated as mantras that conveniently justify the continuation of a model of health insurance that is unraveling, less conspicuously in Switzerland, dramatically in the United States. To make my case, I describe the dominant narrative about Swiss health care and mainstream interpretations of the latest referendum on health reform, unpack the problem within these interpretations, and conclude by identifying what lessons the Swiss referendum contains for single payer advocates in the United States in particular and for those who struggle for social and economic rights more generally. © The Author(s) 2016.

  5. Spin Hall effect transistor

    Czech Academy of Sciences Publication Activity Database

    Wunderlich, Joerg; Park, B.G.; Irvine, A.C.; Zarbo, Liviu; Rozkotová, E.; Němec, P.; Novák, Vít; Sinova, Jairo; Jungwirth, Tomáš

    2010-01-01

    Roč. 330, č. 6012 (2010), s. 1801-1804 ISSN 0036-8075 R&D Projects: GA AV ČR KAN400100652; GA MŠk LC510 EU Projects: European Commission(XE) 215368 - SemiSpinNet Grant - others:AV ČR(CZ) AP0801 Program:Akademická prémie - Praemium Academiae Institutional research plan: CEZ:AV0Z10100521 Keywords : spin Hall effect * spintronics * spin transistor Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 31.364, year: 2010

  6. Deep Learning- and Transfer Learning-Based Super Resolution Reconstruction from Single Medical Image

    Directory of Open Access Journals (Sweden)

    YiNan Zhang

    2017-01-01

    Full Text Available Medical images play an important role in medical diagnosis and research. In this paper, a transfer learning- and deep learning-based super resolution reconstruction method is introduced. The proposed method contains one bicubic interpolation template layer and two convolutional layers. The bicubic interpolation template layer is prefixed by mathematics deduction, and two convolutional layers learn from training samples. For saving training medical images, a SIFT feature-based transfer learning method is proposed. Not only can medical images be used to train the proposed method, but also other types of images can be added into training dataset selectively. In empirical experiments, results of eight distinctive medical images show improvement of image quality and time reduction. Further, the proposed method also produces slightly sharper edges than other deep learning approaches in less time and it is projected that the hybrid architecture of prefixed template layer and unfixed hidden layers has potentials in other applications.

  7. Transistor and memory devices based on novel organic and biomaterials

    Science.gov (United States)

    Tseng, Jia-Hung

    Organic semiconductor devices have aroused considerable interest because of the enormous potential in many technological applications. Organic electroluminescent devices have been extensively applied in display technology. Rapid progress has also been made in transistor and memory devices. This thesis considers aspects of the transistor based on novel organic single crystals and memory devices using hybrid nanocomposites comprising polymeric/inorganic nanoparticles, and biomolecule/quantum dots. Organic single crystals represent highly ordered structures with much less imperfections compared to amorphous thin films for probing the intrinsic charge transport in transistor devices. We demonstrate that free-standing, thin organic single crystals with natural flexing ability can be fabricated as flexible transistors. We study the surface properties of the organic crystals to determine a nearly perfect surface leading to high performance transistors. The flexible transistors can maintain high performance under reversible bending conditions. Because of the high quality crystal technique, we further develop applications on organic complementary circuits and organic single crystal photovoltaics. In the second part, two aspects of memory devices are studied. We examine the charge transfer process between conjugated polymers and metal nanoparticles. This charge transfer process is essential for the conductance switching in nanoseconds to induce the memory effect. Under the reduction condition, the charge transfer process is eliminated as well as the memory effect, raising the importance of coupling between conjugated systems and nanoparticle accepters. The other aspect of memory devices focuses on the interaction of virus biomolecules with quantum dots or metal nanoparticles in the devices. We investigate the impact of memory function on the hybrid bio-inorganic system. We perform an experimental analysis of the charge storage activation energy in tobacco mosaic virus with

  8. Monolithic metal oxide transistors.

    Science.gov (United States)

    Choi, Yongsuk; Park, Won-Yeong; Kang, Moon Sung; Yi, Gi-Ra; Lee, Jun-Young; Kim, Yong-Hoon; Cho, Jeong Ho

    2015-04-28

    We devised a simple transparent metal oxide thin film transistor architecture composed of only two component materials, an amorphous metal oxide and ion gel gate dielectric, which could be entirely assembled using room-temperature processes on a plastic substrate. The geometry cleverly takes advantage of the unique characteristics of the two components. An oxide layer is metallized upon exposure to plasma, leading to the formation of a monolithic source-channel-drain oxide layer, and the ion gel gate dielectric is used to gate the transistor channel effectively at low voltages through a coplanar gate. We confirmed that the method is generally applicable to a variety of sol-gel-processed amorphous metal oxides, including indium oxide, indium zinc oxide, and indium gallium zinc oxide. An inverter NOT logic device was assembled using the resulting devices as a proof of concept demonstration of the applicability of the devices to logic circuits. The favorable characteristics of these devices, including (i) the simplicity of the device structure with only two components, (ii) the benign fabrication processes at room temperature, (iii) the low-voltage operation under 2 V, and (iv) the excellent and stable electrical performances, together support the application of these devices to low-cost portable gadgets, i.e., cheap electronics.

  9. Copper atomic-scale transistors

    Directory of Open Access Journals (Sweden)

    Fangqing Xie

    2017-03-01

    Full Text Available We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO4 + H2SO4 in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate. The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and −170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes (Ubias influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1G0 (G0 = 2e2/h; with e being the electron charge, and h being Planck’s constant or 2G0 by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors.

  10. Co-Located Collaborative Learning Video Game with Single Display Groupware

    Science.gov (United States)

    Infante, Cristian; Weitz, Juan; Reyes, Tomas; Nussbaum, Miguel; Gomez, Florencia; Radovic, Darinka

    2010-01-01

    Role Game is a co-located CSCL video game played by three students sitting at one machine sharing a single screen, each with their own input device. Inspired by video console games, Role Game enables students to learn by doing, acquiring social abilities and mastering subject matter in a context of co-located collaboration. After describing the…

  11. Aging and probabilistic learning in single- and multiple-cue tasks.

    Science.gov (United States)

    Chasseigne, Gérard; Ligneau, Catherine; Grau, Sébastien; Le Gall, Armel; Roque, Magali; Mullet, Etienne

    2004-01-01

    The objective of the study was to examine some of the conditions under which elderly people are able to learn probabilistic inverse relationships and when this type of learning is no longer possible. Two kind of tasks were used: (a) two single-cue learning tasks with either direct or inverse relationships (the Single-Cue Probability Learning paradigm), and (b) three two-cue learning tasks, one with two direct relationships, one with a combination of direct and inverse relationships, and one with two inverse relationships (the Multiple-Cue Probability Learning paradigm). Four groups of participants were included in the study: young adults (18- to 25-year-olds), adults (40- to 50-year-olds), elderly people (65- to 74-year-olds), and very elderly people (75- to 90-year-olds). It was shown that (a) older adults are able to reject the direct relationship "default" hypothesis and select the inverse relationship hypothesis when outcome feedback contradicting the default hypothesis is given, and provided that the learning setting be a very simple one, involving only one cue; (b) some older adults are able to select the inverse relationship hypothesis provided that the learning setting be a simple one,involving only two inverse relationship cues; and (c) very few older adults are able to select the inverse relationship hypothesis when the learning setting is a complex one, involving two cues with both direct and inverse relationships with the criterion. These results led to the revision of the "gradual decrease of cognitive flexibility in older adults" hypothesis proposed by Chasseigne, Mullet, and Stewart (Acta Psychologicgrave;a, 103, 229-238, 1997).

  12. Programmable automated transistor test system

    International Nuclear Information System (INIS)

    Truong, L.V.; Sundberg, G.R.

    1986-01-01

    The paper describes a programmable automated transistor test system (PATTS) and its utilization to evaluate bipolar transistors and Darlingtons, and such MOSFET and special types as can be accommodated with the PATTS base-drive. An application of a pulsed power technique at low duty cycles in a non-destructive test is used to examine the dynamic switching characteristic curves of power transistors. Data collection, manipulation, storage, and output are operator interactive but are guided and controlled by the system software. In addition a library of test data is established on disks, tapes, and hard copies for future reference

  13. Remaining Useful Life Estimation of Insulated Gate Biploar Transistors (IGBTs Based on a Novel Volterra k-Nearest Neighbor Optimally Pruned Extreme Learning Machine (VKOPP Model Using Degradation Data

    Directory of Open Access Journals (Sweden)

    Zhen Liu

    2017-11-01

    Full Text Available The insulated gate bipolar transistor (IGBT is a kind of excellent performance switching device used widely in power electronic systems. How to estimate the remaining useful life (RUL of an IGBT to ensure the safety and reliability of the power electronics system is currently a challenging issue in the field of IGBT reliability. The aim of this paper is to develop a prognostic technique for estimating IGBTs’ RUL. There is a need for an efficient prognostic algorithm that is able to support in-situ decision-making. In this paper, a novel prediction model with a complete structure based on optimally pruned extreme learning machine (OPELM and Volterra series is proposed to track the IGBT’s degradation trace and estimate its RUL; we refer to this model as Volterra k-nearest neighbor OPELM prediction (VKOPP model. This model uses the minimum entropy rate method and Volterra series to reconstruct phase space for IGBTs’ ageing samples, and a new weight update algorithm, which can effectively reduce the influence of the outliers and noises, is utilized to establish the VKOPP network; then a combination of the k-nearest neighbor method (KNN and least squares estimation (LSE method is used to calculate the output weights of OPELM and predict the RUL of the IGBT. The prognostic results show that the proposed approach can predict the RUL of IGBT modules with small error and achieve higher prediction precision and lower time cost than some classic prediction approaches.

  14. Remaining Useful Life Estimation of Insulated Gate Biploar Transistors (IGBTs) Based on a Novel Volterra k-Nearest Neighbor Optimally Pruned Extreme Learning Machine (VKOPP) Model Using Degradation Data.

    Science.gov (United States)

    Liu, Zhen; Mei, Wenjuan; Zeng, Xianping; Yang, Chenglin; Zhou, Xiuyun

    2017-11-03

    The insulated gate bipolar transistor (IGBT) is a kind of excellent performance switching device used widely in power electronic systems. How to estimate the remaining useful life (RUL) of an IGBT to ensure the safety and reliability of the power electronics system is currently a challenging issue in the field of IGBT reliability. The aim of this paper is to develop a prognostic technique for estimating IGBTs' RUL. There is a need for an efficient prognostic algorithm that is able to support in-situ decision-making. In this paper, a novel prediction model with a complete structure based on optimally pruned extreme learning machine (OPELM) and Volterra series is proposed to track the IGBT's degradation trace and estimate its RUL; we refer to this model as Volterra k-nearest neighbor OPELM prediction (VKOPP) model. This model uses the minimum entropy rate method and Volterra series to reconstruct phase space for IGBTs' ageing samples, and a new weight update algorithm, which can effectively reduce the influence of the outliers and noises, is utilized to establish the VKOPP network; then a combination of the k -nearest neighbor method (KNN) and least squares estimation (LSE) method is used to calculate the output weights of OPELM and predict the RUL of the IGBT. The prognostic results show that the proposed approach can predict the RUL of IGBT modules with small error and achieve higher prediction precision and lower time cost than some classic prediction approaches.

  15. Transistor-like behavior of transition metal complexes

    DEFF Research Database (Denmark)

    Albrecht, Tim; Guckian, A; Ulstrup, Jens

    2005-01-01

    scanning tunneling microscope (in situ STM). This configuration resembles a single-molecule transistor, where the reference electrode corresponds to the gate electrode. It operates at room temperature in a condensed matter (here aqueous) environment. Amplification on-off ratios up to 50 are found when...

  16. Electronic properties of germanane field-effect transistors

    NARCIS (Netherlands)

    Madhushankar, B.N.; Kaverzin, A.; Giousis, T.; Potsi, G.; Gournis, D.; Rudolf, P.; Blake, G.R.; van der Wal, C.H.; van Wees, B.J.

    2017-01-01

    A new two dimensional (2D) material—germanane—has been synthesised recently with promising electrical and optical properties. In this paper we report the first realisation of germanane field-effect transistors fabricated from multilayer single crystal flakes. Our germanane devices show transport in

  17. Microwave flexible transistors on cellulose nanofibrillated fiber substrates

    Science.gov (United States)

    Jung-Hun Seo; Tzu-Hsuan Chang; Jaeseong Lee; Ronald Sabo; Weidong Zhou; Zhiyong Cai; Shaoqin Gong; Zhenqiang Ma

    2015-01-01

    In this paper, we demonstrate microwave flexible thin-film transistors (TFTs) on biodegradable substrates towards potential green portable devices. The combination of cellulose nanofibrillated fiber (CNF) substrate, which is a biobased and biodegradable platform, with transferrable single crystalline Si nanomembrane (Si NM), enables the realization of truly...

  18. Transistors - From Point Contact to Single Electron

    Indian Academy of Sciences (India)

    development of the energy band theory of solids by Wilson. ... Davydov developed bis theory independently. All these theories had shortcomings as pointed out by Sab. The correct theory of metal-semiconductor diodes based on thermionic emission of majority carriers .... watches and other portable consumer applications.

  19. Microwave Enhanced Cotunneling in SET Transistors

    DEFF Research Database (Denmark)

    Manscher, Martin; Savolainen, M.; Mygind, Jesper

    2003-01-01

    Cotunneling in single electron tunneling (SET) devices is an error process which may severely limit their electronic and metrologic applications. Here is presented an experimental investigation of the theory for adiabatic enhancement of cotunneling by coherent microwaves. Cotunneling in SET...... transistors has been measured as function of temperature, gate voltage, frequency, and applied microwave power. At low temperatures and applied power levels, including also sequential tunneling, the results can be made consistent with theory using the unknown damping in the microwave line as the only free...

  20. Recent progress in photoactive organic field-effect transistors

    OpenAIRE

    Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok

    2014-01-01

    Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These ar...

  1. Transistor device for multi-bit non-volatile storage

    International Nuclear Information System (INIS)

    Tan, S.G.; Jalil, M.B.A.; Kumar, Vimal; Liew, Thomas; Teo, K.L.; Chong, T.C.

    2006-01-01

    We propose a transistor model that incorporates multiple storage elements within a single transistor device. This device is thus smaller in size compared to the magnetoresistive random access memory (MRAM) with the same number of storage bits. The device model can function in both the current as well as voltage detection mode. Simulations were carried out at higher temperature, taking into consideration the spread of electron density above the Fermi level. We found that linear detection of conductance variation with the stored binary value can be achieved for a 3-bit storage device up to a temperature of 350 K

  2. Reconfigurable quadruple quantum dots in a silicon nanowire transistor

    Energy Technology Data Exchange (ETDEWEB)

    Betz, A. C., E-mail: ab2106@cam.ac.uk; Broström, M.; Gonzalez-Zalba, M. F. [Hitachi Cambridge Laboratory, J. J. Thomson Avenue, Cambridge CB3 0HE (United Kingdom); Tagliaferri, M. L. V. [Laboratorio MDM, CNR-IMM, Via C. Olivetti 2, 20864 Agrate Brianza (MB) (Italy); Dipartimento di Scienza dei Materiali, Universit di Milano-Bicocca, Via Cozzi 53, 20125 Milano (Italy); Vinet, M. [CEA/LETI-MINATEC, CEA-Grenoble, 17 rue des martyrs, F-38054 Grenoble (France); Sanquer, M. [SPSMS, UMR-E CEA/UJF-Grenoble 1, INAC, 17 rue des Martyrs, 38054 Grenoble (France); Ferguson, A. J. [Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE (United Kingdom)

    2016-05-16

    We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.

  3. Reconfigurable quadruple quantum dots in a silicon nanowire transistor

    International Nuclear Information System (INIS)

    Betz, A. C.; Broström, M.; Gonzalez-Zalba, M. F.; Tagliaferri, M. L. V.; Vinet, M.; Sanquer, M.; Ferguson, A. J.

    2016-01-01

    We present a reconfigurable metal-oxide-semiconductor multi-gate transistor that can host a quadruple quantum dot in silicon. The device consists of an industrial quadruple-gate silicon nanowire field-effect transistor. Exploiting the corner effect, we study the versatility of the structure in the single quantum dot and the serial double quantum dot regimes and extract the relevant capacitance parameters. We address the fabrication variability of the quadruple-gate approach which, paired with improved silicon fabrication techniques, makes the corner state quantum dot approach a promising candidate for a scalable quantum information architecture.

  4. Nanowire transistors physics of devices and materials in one dimension

    CERN Document Server

    Colinge, Jean-Pierre

    2016-01-01

    From quantum mechanical concepts to practical circuit applications, this book presents a self-contained and up-to-date account of the physics and technology of nanowire semiconductor devices. It includes a unified account of the critical ideas central to low-dimensional physics and transistor physics which equips readers with a common framework and language to accelerate scientific and technological developments across the two fields. Detailed descriptions of novel quantum mechanical effects such as quantum current oscillations, the metal-to-semiconductor transition and the transition from classical transistor to single-electron transistor operation are described in detail, in addition to real-world applications in the fields of nanoelectronics, biomedical sensing techniques, and advanced semiconductor research. Including numerous illustrations to help readers understand these phenomena, this is an essential resource for researchers and professional engineers working on semiconductor devices and materials in ...

  5. LEARNING CURVE IN SINGLE-LEVEL MINIMALLY INVASIVE TLIF: EXPERIENCE OF A NEUROSURGEON

    Directory of Open Access Journals (Sweden)

    Samuel Romano-Feinholz

    Full Text Available ABSTRACT Objective: To describe the learning curve that shows the progress of a single neurosurgeon when performing single-level MI-TLIF. Methods: We included 99 consecutive patients who underwent single-level MI-TLIF by the same neurosurgeon (JASS. Patient’s demographic characteristics were analyzed. In addition, surgical time, intraoperative blood loss and hospital stay were evaluated. The learning curves were calculated with a piecewise regression model. Results: The mean age was 54.6 years. The learning curves showed an inverse relationship between the surgical experience and the variable analyzed, reaching an inflection point for surgical time in case 43 and for blood loss in case 48. The mean surgical time was 203.3 minutes (interquartile range [IQR] 150-240 minutes, intraoperative bleeding was 97.4ml (IQR 40-100ml and hospital stay of four days (IQR 3-5 days. Conclusions: MI-TLIF is a very frequent surgical procedure due to its effectiveness and safety, which has shown similar results to open procedure. According to this study, the required learning curve is slightly higher than for open procedures, and is reached after about 45 cases.

  6. John Bardeen and transistor physics

    Science.gov (United States)

    Huff, Howard R.

    2001-01-01

    John Bardeen and Walter Brattain invented the point-contact semiconductor amplifier (transistor action) in polycrystalline germanium (also observed in polycrystalline silicon) on Dec. 15, 1947, for which they received a patent on Oct. 3, 1950. Bill Shockley was not a co-patent holder on Bardeen and Brattain's point-contact semiconductor amplifier patent since Julius Lilienfeld had already received a patent in 1930 for what would have been Shockley's contribution; namely, the field-effect methodology. Shockley received patents for both his minority-carrier injection concept and junction transistor theory, however, and deservedly shared the Nobel prize with Bardeen and Brattain for his seminal contributions of injection, p-n junction theory and junction transistor theory. We will review the events leading up to the invention of Bardeen and Brattain's point-contact semiconductor amplifier during the magic month of November 17-December 16, 1947 and the invention of Shockley's junction semiconductor amplifier during his magic month of December 24, 1947-January 23, 1948. It was during the course of Bardeen and Brattain's research in November, 1947 that Bardeen also patented the essence of the MOS transistor, wherein the induced minority carriers were confined to the inversion layer enroute to the collector. C. T. Sah has described this device as a sourceless MOS transistor. Indeed, John Bardeen, co-inventor of the point-contact semiconductor amplifier and inventor of the MOS transistor, may rightly be called the father of modern electronics.

  7. Fault Diagnosis for Engine Based on Single-Stage Extreme Learning Machine

    Directory of Open Access Journals (Sweden)

    Fei Gao

    2016-01-01

    Full Text Available Single-Stage Extreme Learning Machine (SS-ELM is presented to dispose of the mechanical fault diagnosis in this paper. Based on it, the traditional mapping type of extreme learning machine (ELM has been changed and the eigenvectors extracted from signal processing methods are directly regarded as outputs of the network’s hidden layer. Then the uncertainty that training data transformed from the input space to the ELM feature space with the ELM mapping and problem of the selection of the hidden nodes are avoided effectively. The experiment results of diesel engine fault diagnosis show good performance of the SS-ELM algorithm.

  8. Single-site robotic cholecystectomy (SSRC) versus single-incision laparoscopic cholecystectomy (SILC): comparison of learning curves. First European experience.

    Science.gov (United States)

    Spinoglio, Giuseppe; Lenti, Luca Matteo; Maglione, Valeria; Lucido, Francesco Saverio; Priora, Fabio; Bianchi, Paolo Pietro; Grosso, Federica; Quarati, Raul

    2012-06-01

    Single-incision laparoscopic surgery is an emerging procedure developed to decrease parietal trauma and improve cosmetic results. However, many technical constraints, such as lack of triangulation, instrument collisions, and cross-handing, hamper this approach. Using a robotic platform may overcome these problems and enable more precise surgical actions by increasing freedom of movement and by restoring intuitive instrument control. We retrospectively collected, under institutional review board approval, data on the first 25 patients who underwent single-site robotic cholecystectomies (SSRC) at our center. Patients enrolled in this study underwent SSRC for symptomatic biliary gallstones or polyposis. Exclusion criteria were: BMI > 33; acute cholecystitis; previous upper abdominal surgery; ASA > II; and age >80 and <18 years. All procedures were performed with the da Vinci Si Surgical System and a dedicated SSRC kit (Intuitive). After discharge, patients were followed for 2 months. These SSRC cases were compared to our first 25 single-incision laparoscopic cholecystectomies (SILC) and with the literature. There were no differences in patient characteristics between groups (gender, P = 0.4404; age, P = 0.7423; BMI, P = 0.5699), and there were no conversions or major complications in either cohort. Operative time was significantly longer for the SILC group compared with SSRC (83.2 vs. 62.7 min, P = 0.0006), and SSRC operative times did not change significantly along the series. The majority of patients in each group were discharged within 24 h, with an average length of hospital stay of 1.2 days for the SILC group and 1.1 days for the SSRC group (P = 0.2854). No wound complications (infection, incisional hernia) were observed in the SSRC group and in the SILC. Our preliminary experience shows that SSRC is safe, can easily be learned, and performed in a reproducible manner and is faster than SILC.

  9. A learning rule for very simple universal approximators consisting of a single layer of perceptrons.

    Science.gov (United States)

    Auer, Peter; Burgsteiner, Harald; Maass, Wolfgang

    2008-06-01

    One may argue that the simplest type of neural networks beyond a single perceptron is an array of several perceptrons in parallel. In spite of their simplicity, such circuits can compute any Boolean function if one views the majority of the binary perceptron outputs as the binary output of the parallel perceptron, and they are universal approximators for arbitrary continuous functions with values in [0,1] if one views the fraction of perceptrons that output 1 as the analog output of the parallel perceptron. Note that in contrast to the familiar model of a "multi-layer perceptron" the parallel perceptron that we consider here has just binary values as outputs of gates on the hidden layer. For a long time one has thought that there exists no competitive learning algorithm for these extremely simple neural networks, which also came to be known as committee machines. It is commonly assumed that one has to replace the hard threshold gates on the hidden layer by sigmoidal gates (or RBF-gates) and that one has to tune the weights on at least two successive layers in order to achieve satisfactory learning results for any class of neural networks that yield universal approximators. We show that this assumption is not true, by exhibiting a simple learning algorithm for parallel perceptrons - the parallel delta rule (p-delta rule). In contrast to backprop for multi-layer perceptrons, the p-delta rule only has to tune a single layer of weights, and it does not require the computation and communication of analog values with high precision. Reduced communication also distinguishes our new learning rule from other learning rules for parallel perceptrons such as MADALINE. Obviously these features make the p-delta rule attractive as a biologically more realistic alternative to backprop in biological neural circuits, but also for implementations in special purpose hardware. We show that the p-delta rule also implements gradient descent-with regard to a suitable error measure

  10. Logarithmic current-measuring transistor circuits

    DEFF Research Database (Denmark)

    Højberg, Kristian Søe

    1967-01-01

    Describes two transistorized circuits for the logarithmic measurement of small currents suitable for nuclear reactor instrumentation. The logarithmic element is applied in the feedback path of an amplifier, and only one dual transistor is used as logarithmic diode and temperature compensating...... transistor. A simple one-amplifier circuit is compared with a two-amplifier system. The circuits presented have been developed in connexion with an amplifier using a dual m.o.s. transistor input stage with diode-protected gates....

  11. Individual SnO2 nanowire transistors fabricated by the gold microwire mask method

    International Nuclear Information System (INIS)

    Sun Jia; Tang Qingxin; Lu Aixia; Jiang Xuejiao; Wan Qing

    2009-01-01

    A gold microwire mask method is developed for the fabrication of transistors based on single lightly Sb-doped SnO 2 nanowires. Damage of the nanowire's surface can be avoided without any thermal annealing and surface modification, which is very convenient for the fundamental electrical and photoelectric characterization of one-dimensional inorganic nanomaterials. Transport measurements of the individual SnO 2 nanowire devices demonstrate the high-performance n-type field effect transistor characteristics without significant hysteresis in the transfer curves. The current on/off ratio and the subthreshold swing of the nanowire transistors are found to be 10 6 and 240 mV/decade, respectively.

  12. Crossover learning of gestures in two ideomotor apraxia patients: A single case experimental design study.

    Science.gov (United States)

    Shimizu, Daisuke; Tanemura, Rumi

    2017-06-01

    Crossover learning may aid rehabilitation in patients with neurological disorders. Ideomotor apraxia (IMA) is a common sequela of left-brain damage that comprises a deficit in the ability to perform gestures to verbal commands or by imitation. This study elucidated whether crossover learning occurred in two post-stroke IMA patients without motor paralysis after gesture training approximately 2 months after stroke onset. We quantitatively analysed the therapeutic intervention history and investigated whether revised action occurred during gesture production. Treatment intervention was to examine how to influence improvement and generalisation of the ability to produce the gesture. This study used an alternating treatments single-subject design, and the intervention method was errorless learning. Results indicated crossover learning in both patients. Qualitative analysis indicated that revised action occurred during the gesture-production process in one patient and that there were two types of post-revised action gestures: correct and incorrect gestures. We also discovered that even when a comparably short time had elapsed since stroke onset, generalisation was difficult. Information transfer between the left and right hemispheres of the brain via commissural fibres is important in crossover learning. In conclusion, improvements in gesture-production skill should be made with reference to the left cerebral hemisphere disconnection hypothesis.

  13. Obtaining Global Picture From Single Point Observations by Combining Data Assimilation and Machine Learning Tools

    Science.gov (United States)

    Shprits, Y.; Zhelavskaya, I. S.; Kellerman, A. C.; Spasojevic, M.; Kondrashov, D. A.; Ghil, M.; Aseev, N.; Castillo Tibocha, A. M.; Cervantes Villa, J. S.; Kletzing, C.; Kurth, W. S.

    2017-12-01

    Increasing volume of satellite measurements requires deployment of new tools that can utilize such vast amount of data. Satellite measurements are usually limited to a single location in space, which complicates the data analysis geared towards reproducing the global state of the space environment. In this study we show how measurements can be combined by means of data assimilation and how machine learning can help analyze large amounts of data and can help develop global models that are trained on single point measurement. Data Assimilation: Manual analysis of the satellite measurements is a challenging task, while automated analysis is complicated by the fact that measurements are given at various locations in space, have different instrumental errors, and often vary by orders of magnitude. We show results of the long term reanalysis of radiation belt measurements along with fully operational real-time predictions using data assimilative VERB code. Machine Learning: We present application of the machine learning tools for the analysis of NASA Van Allen Probes upper-hybrid frequency measurements. Using the obtained data set we train a new global predictive neural network. The results for the Van Allen Probes based neural network are compared with historical IMAGE satellite observations. We also show examples of predictions of geomagnetic indices using neural networks. Combination of machine learning and data assimilation: We discuss how data assimilation tools and machine learning tools can be combine so that physics-based insight into the dynamics of the particular system can be combined with empirical knowledge of it's non-linear behavior.

  14. Magnetic Vortex Based Transistor Operations

    Science.gov (United States)

    Kumar, D.; Barman, S.; Barman, A.

    2014-01-01

    Transistors constitute the backbone of modern day electronics. Since their advent, researchers have been seeking ways to make smaller and more efficient transistors. Here, we demonstrate a sustained amplification of magnetic vortex core gyration in coupled two and three vortices by controlling their relative core polarities. This amplification is mediated by a cascade of antivortex solitons travelling through the dynamic stray field. We further demonstrated that the amplification can be controlled by switching the polarity of the middle vortex in a three vortex sequence and the gain can be controlled by the input signal amplitude. An attempt to show fan–out operation yielded gain for one of the symmetrically placed branches which can be reversed by switching the core polarity of all the vortices in the network. The above observations promote the magnetic vortices as suitable candidates to work as stable bipolar junction transistors (BJT). PMID:24531235

  15. Transistor challenges - A DRAM perspective

    International Nuclear Information System (INIS)

    Faul, Juergen W.; Henke, Dietmar

    2005-01-01

    Key challenges of the transistor scaling from a DRAM perspective will be reviewed. Both, array transistors as well as DRAM support devices face challenges that differ essentially from high performance logic device scaling. As a major difference, retention time and standby current requirements characterize special boundary conditions in the DRAM device design. Array device scaling is determined by a chip size driven aggressive node scaling. To continue scaling, major innovations need to be introduced into state-of-the-art planar array transistors. Alternatively, non planar device concepts will have to be evaluated. Support device design for DRAMs is driven by today's market demand for increased chip performances at little to no extra cost. Major innovations are required to continue that path. Besides this strive for performance increase, special limitations for 'on pitch' circuits at the array edge will come up due to the aggressive cell size scaling

  16. Magnetic Vortex Based Transistor Operations

    Science.gov (United States)

    Kumar, D.; Barman, S.; Barman, A.

    2014-02-01

    Transistors constitute the backbone of modern day electronics. Since their advent, researchers have been seeking ways to make smaller and more efficient transistors. Here, we demonstrate a sustained amplification of magnetic vortex core gyration in coupled two and three vortices by controlling their relative core polarities. This amplification is mediated by a cascade of antivortex solitons travelling through the dynamic stray field. We further demonstrated that the amplification can be controlled by switching the polarity of the middle vortex in a three vortex sequence and the gain can be controlled by the input signal amplitude. An attempt to show fan-out operation yielded gain for one of the symmetrically placed branches which can be reversed by switching the core polarity of all the vortices in the network. The above observations promote the magnetic vortices as suitable candidates to work as stable bipolar junction transistors (BJT).

  17. Decoding sequence learning from single-trial intracranial EEG in humans.

    Directory of Open Access Journals (Sweden)

    Marzia De Lucia

    Full Text Available We propose and validate a multivariate classification algorithm for characterizing changes in human intracranial electroencephalographic data (iEEG after learning motor sequences. The algorithm is based on a Hidden Markov Model (HMM that captures spatio-temporal properties of the iEEG at the level of single trials. Continuous intracranial iEEG was acquired during two sessions (one before and one after a night of sleep in two patients with depth electrodes implanted in several brain areas. They performed a visuomotor sequence (serial reaction time task, SRTT using the fingers of their non-dominant hand. Our results show that the decoding algorithm correctly classified single iEEG trials from the trained sequence as belonging to either the initial training phase (day 1, before sleep or a later consolidated phase (day 2, after sleep, whereas it failed to do so for trials belonging to a control condition (pseudo-random sequence. Accurate single-trial classification was achieved by taking advantage of the distributed pattern of neural activity. However, across all the contacts the hippocampus contributed most significantly to the classification accuracy for both patients, and one fronto-striatal contact for one patient. Together, these human intracranial findings demonstrate that a multivariate decoding approach can detect learning-related changes at the level of single-trial iEEG. Because it allows an unbiased identification of brain sites contributing to a behavioral effect (or experimental condition at the level of single subject, this approach could be usefully applied to assess the neural correlates of other complex cognitive functions in patients implanted with multiple electrodes.

  18. Learning rate and attractor size of the single-layer perceptron

    International Nuclear Information System (INIS)

    Singleton, Martin S.; Huebler, Alfred W.

    2007-01-01

    We study the simplest possible order one single-layer perceptron with two inputs, using the delta rule with online learning, in order to derive closed form expressions for the mean convergence rates. We investigate the rate of convergence in weight space of the weight vectors corresponding to each of the 14 out of 16 linearly separable rules. These vectors follow zigzagging lines through the piecewise constant vector field to their respective attractors. Based on our studies, we conclude that a single-layer perceptron with N inputs will converge in an average number of steps given by an Nth order polynomial in (t/l), where t is the threshold, and l is the size of the initial weight distribution. Exact values for these averages are provided for the five linearly separable classes with N=2. We also demonstrate that the learning rate is determined by the attractor size, and that the attractors of a single-layer perceptron with N inputs partition R N +R N

  19. Coarse-to-Fine Learning for Single-Image Super-Resolution.

    Science.gov (United States)

    Zhang, Kaibing; Tao, Dacheng; Gao, Xinbo; Li, Xuelong; Li, Jie

    2017-05-01

    This paper develops a coarse-to-fine framework for single-image super-resolution (SR) reconstruction. The coarse-to-fine approach achieves high-quality SR recovery based on the complementary properties of both example learning-and reconstruction-based algorithms: example learning-based SR approaches are useful for generating plausible details from external exemplars but poor at suppressing aliasing artifacts, while reconstruction-based SR methods are propitious for preserving sharp edges yet fail to generate fine details. In the coarse stage of the method, we use a set of simple yet effective mapping functions, learned via correlative neighbor regression of grouped low-resolution (LR) to high-resolution (HR) dictionary atoms, to synthesize an initial SR estimate with particularly low computational cost. In the fine stage, we devise an effective regularization term that seamlessly integrates the properties of local structural regularity, nonlocal self-similarity, and collaborative representation over relevant atoms in a learned HR dictionary, to further improve the visual quality of the initial SR estimation obtained in the coarse stage. The experimental results indicate that our method outperforms other state-of-the-art methods for producing high-quality images despite that both the initial SR estimation and the followed enhancement are cheap to implement.

  20. Enhanced transconductance in a double-gate graphene field-effect transistor

    Science.gov (United States)

    Hwang, Byeong-Woon; Yeom, Hye-In; Kim, Daewon; Kim, Choong-Ki; Lee, Dongil; Choi, Yang-Kyu

    2018-03-01

    Multi-gate transistors, such as double-gate, tri-gate and gate-all-around transistors are the most advanced Si transistor structure today. Here, a genuine double-gate transistor with a graphene channel is experimentally demonstrated. The top and bottom gates of the double-gate graphene field-effect transistor (DG GFET) are electrically connected so that the conductivity of the graphene channel can be modulated simultaneously by both the top and bottom gate. A single-gate graphene field-effect transistor (SG GFET) with only the top gate is also fabricated as a control device. For systematical analysis, the transfer characteristics of both GFETs were measured and compared. Whereas the maximum transconductance of the SG GFET was 17.1 μS/μm, that of the DG GFET was 25.7 μS/μm, which is approximately a 50% enhancement. The enhancement of the transconductance was reproduced and comprehensively explained by a physics-based compact model for GFETs. The investigation of the enhanced transfer characteristics of the DG GFET in this work shows the possibility of a multi-gate architecture for high-performance graphene transistor technology.

  1. CMOS-based carbon nanotube pass-transistor logic integrated circuits

    Science.gov (United States)

    Ding, Li; Zhang, Zhiyong; Liang, Shibo; Pei, Tian; Wang, Sheng; Li, Yan; Zhou, Weiwei; Liu, Jie; Peng, Lian-Mao

    2012-01-01

    Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based on a pass-transistor logic configuration, rather than a complementary metal-oxide semiconductor configuration. Logic gates are constructed on individual carbon nanotubes via a doping-free approach and with a single power supply at voltages as low as 0.4 V. The pass-transistor logic configurarion provides a significant simplification of the carbon nanotube-based circuit design, a higher potential circuit speed and a significant reduction in power consumption. In particular, a full adder, which requires a total of 28 field-effect transistors to construct in the usual complementary metal-oxide semiconductor circuit, uses only three pairs of n- and p-field-effect transistors in the pass-transistor logic configuration. PMID:22334080

  2. Analysing organic transistors based on interface approximation

    International Nuclear Information System (INIS)

    Akiyama, Yuto; Mori, Takehiko

    2014-01-01

    Temperature-dependent characteristics of organic transistors are analysed thoroughly using interface approximation. In contrast to amorphous silicon transistors, it is characteristic of organic transistors that the accumulation layer is concentrated on the first monolayer, and it is appropriate to consider interface charge rather than band bending. On the basis of this model, observed characteristics of hexamethylenetetrathiafulvalene (HMTTF) and dibenzotetrathiafulvalene (DBTTF) transistors with various surface treatments are analysed, and the trap distribution is extracted. In turn, starting from a simple exponential distribution, we can reproduce the temperature-dependent transistor characteristics as well as the gate voltage dependence of the activation energy, so we can investigate various aspects of organic transistors self-consistently under the interface approximation. Small deviation from such an ideal transistor operation is discussed assuming the presence of an energetically discrete trap level, which leads to a hump in the transfer characteristics. The contact resistance is estimated by measuring the transfer characteristics up to the linear region

  3. A single session of exercise as a modulator of short-term learning in healthy individuals.

    Science.gov (United States)

    Sage, Michael D; Beyer, Kit B; Laylor, Mark; Liang, Carmen; Roy, Eric A; McIlroy, William E

    2016-08-26

    A single session of aerobic exercise is linked to faster motor responses; however, the effect on rate of short-term learning is less clear. The objective was to evaluate the influence of a single bout of aerobic exercise on the rate of short-term acquisition of a shape-letter association task requiring a motor response. 23 [11 females, age 20.8±2.7years] healthy young adults were evaluated using a randomly assigned crossover design which was counterbalanced for order before and after moderate (exercise) and light (control) intensity cycle ergometry. Participants performed 3 blocks, with each block consisting of one round of training and testing. During training, participants were tasked with learning 6 unique shape-letter associations. Subsequent testing required a key press response to a visually presented shape pattern. Response time and error rates were used to assess acquisition over the 3 blocks of testing. Mean response time was faster post-exercise relative to the other testing periods, and approached statistical significance compared to post-control (pexercise and control conditions). Error rate reduction (test block 1 minus test block 3) revealed that individuals had the smallest change in error rate post-exercise (pexercise which approached statistical significance (p=0.06) suggesting near-perfect error rates were obtained after only 2 testing blocks post-exercise compared to 3 blocks in the other testing periods. Support for augmentation of short-term learning was mixed as errors were reduced post-exercise while response time was not different between evaluations. Future work should include neurophysiological evaluation and a retention test to better elucidate the influence of aerobic exercise on rate of short-term learning. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

  4. Flexible black phosphorus ambipolar transistors, circuits and AM demodulator.

    Science.gov (United States)

    Zhu, Weinan; Yogeesh, Maruthi N; Yang, Shixuan; Aldave, Sandra H; Kim, Joon-Seok; Sonde, Sushant; Tao, Li; Lu, Nanshu; Akinwande, Deji

    2015-03-11

    High-mobility two-dimensional (2D) semiconductors are desirable for high-performance mechanically flexible nanoelectronics. In this work, we report the first flexible black phosphorus (BP) field-effect transistors (FETs) with electron and hole mobilities superior to what has been previously achieved with other more studied flexible layered semiconducting transistors such as MoS2 and WSe2. Encapsulated bottom-gated BP ambipolar FETs on flexible polyimide afforded maximum carrier mobility of about 310 cm(2)/V·s with field-effect current modulation exceeding 3 orders of magnitude. The device ambipolar functionality and high-mobility were employed to realize essential circuits of electronic systems for flexible technology including ambipolar digital inverter, frequency doubler, and analog amplifiers featuring voltage gain higher than other reported layered semiconductor flexible amplifiers. In addition, we demonstrate the first flexible BP amplitude-modulated (AM) demodulator, an active stage useful for radio receivers, based on a single ambipolar BP transistor, which results in audible signals when connected to a loudspeaker or earphone. Moreover, the BP transistors feature mechanical robustness up to 2% uniaxial tensile strain and up to 5000 bending cycles.

  5. Using machine learning to identify structural breaks in single-group interrupted time series designs.

    Science.gov (United States)

    Linden, Ariel; Yarnold, Paul R

    2016-12-01

    Single-group interrupted time series analysis (ITSA) is a popular evaluation methodology in which a single unit of observation is being studied, the outcome variable is serially ordered as a time series and the intervention is expected to 'interrupt' the level and/or trend of the time series, subsequent to its introduction. Given that the internal validity of the design rests on the premise that the interruption in the time series is associated with the introduction of the treatment, treatment effects may seem less plausible if a parallel trend already exists in the time series prior to the actual intervention. Thus, sensitivity analyses should focus on detecting structural breaks in the time series before the intervention. In this paper, we introduce a machine-learning algorithm called optimal discriminant analysis (ODA) as an approach to determine if structural breaks can be identified in years prior to the initiation of the intervention, using data from California's 1988 voter-initiated Proposition 99 to reduce smoking rates. The ODA analysis indicates that numerous structural breaks occurred prior to the actual initiation of Proposition 99 in 1989, including perfect structural breaks in 1983 and 1985, thereby casting doubt on the validity of treatment effects estimated for the actual intervention when using a single-group ITSA design. Given the widespread use of ITSA for evaluating observational data and the increasing use of machine-learning techniques in traditional research, we recommend that structural break sensitivity analysis is routinely incorporated in all research using the single-group ITSA design. © 2016 John Wiley & Sons, Ltd.

  6. Language, learning, and memory in children with and without single-suture craniosynostosis.

    Science.gov (United States)

    Kapp-Simon, Kathleen A; Wallace, Erin; Collett, Brent R; Cradock, Mary Michaeleen; Crerand, Canice E; Speltz, Matthew L

    2016-05-01

    OBJECTIVE The language and memory functions of children with and without single-suture craniosynostosis (SSC) were compared at school age (mean 7.45 years, standard deviation [SD] 0.54 years). The children in this cohort were originally recruited in infancy and prior to cranial surgery for those with SSC. METHODS Individual evaluations of 179 school-aged children with SSC and 183 controls were conducted (70% of the original cohort) using standardized measures of language, learning, and memory. Parents participated in an interview about specialized education interventions and school progress. Parents and teachers completed questionnaires about language development. RESULTS Children with SSC (cases) obtained lower scores than controls on all measures. The adjusted differences in language, learning, and memory scores were modest, with SD ranging from 0.0 to -0.4 (p values ranged from 0.001 to 0.99). Censored normal regression was used to account for intervention services received prior to the school-age evaluation; this increased case-control differences (SD range 0.1 to -0.5, p value range 0.001 to 0.50). Mean scores for cases in each SSC diagnostic group were lower than those for controls, with the greatest differences observed among children with unilateral coronal craniosynostosis. CONCLUSIONS Children with SSC continue to show poorer performance than controls on language, learning, and memory tasks at early elementary school age, even when controlling for known confounders, although mean differences are small. Multidisciplinary care, including direct psychological assessment, for children with SSC should extend through school age with a specific focus on language and conceptual learning, as these are areas of potential risk. Future research is needed to investigate language, memory, and learning for this population during the middle to high school years.

  7. Pairwise Operator Learning for Patch Based Single-image Super-resolution.

    Science.gov (United States)

    Tang, Yi; Shao, Ling

    2016-12-14

    Motivated by the fact that image patches could be inherently represented by matrices, single-image super-resolution is treated as a problem of learning regression operators in a matrix space in this paper. The regression operators that map low-resolution image patches to high-resolution image patches are generally defined by left and right multiplication operators. The pairwise operators are respectively used to extract the raw and column information of low-resolution image patches for recovering high-resolution estimations. The patch based regression algorithm possesses three favorable properties. Firstly, the proposed super-resolution algorithm is efficient during both training and testing, because image patches are treated as matrices. Secondly, the data storage requirement of the optimal pairwise operator is far less than most popular single-image super-resolution algorithms because only two small sized matrices need to be stored. Lastly, the super-resolution performance is competitive with most popular single-image super-resolution algorithms because both raw and column information of image patches is considered. Experimental results show the efficiency and effectiveness of the proposed patch-based single-image superresolution algorithm.

  8. A High-Voltage Level Tolerant Transistor Circuit

    NARCIS (Netherlands)

    Annema, Anne J.; Geelen, Godefridus Johannes Gertrudis Maria

    2001-01-01

    A high-voltage level tolerant transistor circuit, comprising a plurality of cascoded transistors, including a first transistor (T1) operatively connected to a high-voltage level node (3) and a second transistor (T2) operatively connected to a low-voltage level node (2). The first transistor (T1)

  9. One-Transistor-One-Transistor (1T1T) Optoelectronic Nonvolatile MoS2Memory Cell with Nondestructive Read-Out.

    Science.gov (United States)

    Lee, Dain; Kim, Seongchan; Kim, Yeontae; Cho, Jeong Ho

    2017-08-09

    Taking advantage of the superlative optoelectronic properties of single-layer MoS 2 , we developed a one-transistor-one-transistor (1T1T)-type MoS 2 optoelectronic nonvolatile memory cell. The 1T1T memory cell consisted of a control transistor (CT) and a memory transistor (MT), in which the drain electrode of the MT was connected electrically to the gate electrode of the CT, whereas the source electrode of the CT was connected electrically to the gate electrode of the MT. Single-layer MoS 2 films were utilized as the channel materials in both transistors, and gold nanoparticles acted as the floating gates in the MT. This 1T1T device architecture allowed for a nondestructive read-out operation in the memory because the writing (programming or erasing) and read-out processes were operated separately. The switching of the CT could be controlled by light illumination as well as the applied gate voltage due to the strong light absorption induced by the direct band gap of single-layer MoS 2 (∼1.8 eV). The resulting MoS 2 1T1T memory cell exhibited excellent memory performance, including a large programming/erasing current ratio (over 10 6 ), multilevel data storage (over 6 levels), cyclic endurance (200 cycles), and stable retention (10 3 s).

  10. InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz

    Science.gov (United States)

    Radisic, Vesna; Sawdai, Donald; Scott, Dennis; Deal, William; Dang, Linh; Li, Danny; Cavus, Abdullah; To, Richard; Lai, Richard

    2009-01-01

    Two single-stage InP heterojunction bipolar transistor (HBT) amplifiers operate at 184 and 255 GHz, using Northrop Grumman Corporation s InP HBT MMIC (monolithic microwave integrated circuit) technology. At the time of this reporting, these are reported to be the highest HBT amplifiers ever created. The purpose of the amplifier design is to evaluate the technology capability for high-frequency designs and verify the model for future development work.

  11. Individual SWCNT based ionic field effect transistor

    Science.gov (United States)

    Pang, Pei; He, Jin; Park, Jae Hyun; Krstic, Predrag; Lindsay, Stuart

    2011-03-01

    Here we report that the ionic current through a single-walled carbon nanotube (SWCNT) can be effectively gated by a perpendicular electrical field from a top gate electrode, working as ionic field effect transistor. Both our experiment and simulation confirms that the electroosmotic current (EOF) is the main component in the ionic current through the SWCNT and is responsible for the gating effect. We also studied the gating efficiency as a function of solution concentration and pH and demonstrated that the device can work effectively in the physiological relevant condition. This work opens the door to use CNT based nanofluidics for ion and molecule manipulation. This work was supported by the DNA Sequencing Technology Program of the National Human Genome Research Institute (1RC2HG005625-01, 1R21HG004770-01), Arizona Technology Enterprises and the Biodesign Institute.

  12. The single surgeon learning curve of laparoscopic liver resection: A continuous evolving process through stepwise difficulties.

    Science.gov (United States)

    Tomassini, Federico; Scuderi, Vincenzo; Colman, Roos; Vivarelli, Marco; Montalti, Roberto; Troisi, Roberto Ivan

    2016-10-01

    The aim of the study was to evaluate the single-surgeon learning curve (SSLC) in laparoscopic liver surgery over an 11-year period with risk-adjusted (RA) cumulative sum control chart analysis.Laparoscopic liver resection (LLR) is a challenging and highly demanding procedure. No specific data are available for defining the feasibility and reproducibility of the SSLC regarding a consistent and consecutive caseload volume over a specified time period.A total of 319 LLR performed by a single surgeon between June 2003 and May 2014 were retrospectively analyzed. A difficulty scale (DS) ranging from 1 to 10 was created to rate the technical difficulty of each LLR. The risk-adjusted cumulative sum control chart (RA-CUSUM) analysis evaluated conversion rate (CR), operative time (OT) and blood loss (BL). Perioperative morbidity and mortality were also analyzed.The RA-CUSUM analysis of the DS identified 3 different periods: P1 (n = 91 cases), with a mean DS of 3.8; P2 (cases 92-159), with a mean DS of 5.3; and P3 (cases 160-319), with a mean DS of 4.7. P2 presented the highest conversion and morbidity rates with a longer OT, whereas P3 showed the best results (P learning curve should be anticipated to broaden the indications for LLR.

  13. Silicon-on-insulator field effect transistor with improved body ties for rad-hard applications

    Science.gov (United States)

    Schwank, James R.; Shaneyfelt, Marty R.; Draper, Bruce L.; Dodd, Paul E.

    2001-01-01

    A silicon-on-insulator (SOI) field-effect transistor (FET) and a method for making the same are disclosed. The SOI FET is characterized by a source which extends only partially (e.g. about half-way) through the active layer wherein the transistor is formed. Additionally, a minimal-area body tie contact is provided with a short-circuit electrical connection to the source for reducing floating body effects. The body tie contact improves the electrical characteristics of the transistor and also provides an improved single-event-upset (SEU) radiation hardness of the device for terrestrial and space applications. The SOI FET also provides an improvement in total-dose radiation hardness as compared to conventional SOI transistors fabricated without a specially prepared hardened buried oxide layer. Complementary n-channel and p-channel SOI FETs can be fabricated according to the present invention to form integrated circuits (ICs) for commercial and military applications.

  14. High-performance radio frequency transistors based on diameter-separated semiconducting carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Cao, Yu; Che, Yuchi; Zhou, Chongwu, E-mail: chongwuz@usc.edu [Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089 (United States); Seo, Jung-Woo T.; Hersam, Mark C. [Department of Materials Science and Engineering and Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States); Gui, Hui [Department of Chemical Engineering and Materials Science, University of Southern California, Los Angeles, California 90089 (United States)

    2016-06-06

    In this paper, we report the high-performance radio-frequency transistors based on the single-walled semiconducting carbon nanotubes with a refined average diameter of ∼1.6 nm. These diameter-separated carbon nanotube transistors show excellent transconductance of 55 μS/μm and desirable drain current saturation with an output resistance of ∼100 KΩ μm. An exceptional radio-frequency performance is also achieved with current gain and power gain cut-off frequencies of 23 GHz and 20 GHz (extrinsic) and 65 GHz and 35 GHz (intrinsic), respectively. These radio-frequency metrics are among the highest reported for the carbon nanotube thin-film transistors. This study provides demonstration of radio frequency transistors based on carbon nanotubes with tailored diameter distributions, which will guide the future application of carbon nanotubes in radio-frequency electronics.

  15. Impact of Single-sex Instruction on Student Motivation to Learn Spanish

    Directory of Open Access Journals (Sweden)

    Scott Kissau

    2009-12-01

    Full Text Available AbstractTo increase male motivation to learn additional languages studies have suggested teaching males in single-sex second and foreign language classes (Carr & Pauwels, 2006; Chambers, 2005. Despite the reported benefits of this unique arrangement, a review of literature found no related research conducted in Canada or the United States. To address this lack of research, a study was conducted in the spring of 2008 to investigate the impact of single-sex instruction on student motivation to learn Spanish. Using Gardner's model of second language motivation (1985, 57 high-school students studying Spanish in either single-sex or coeducational classes completed a pre and post questionnaire to gauge their motivation to learn the language. Follow-up interviews were also conducted with both students and teachers. Results indicated that while both sexes enjoyed some educational advantages from the single-sex environment, the benefits appeared to be greater for the males than the females.RésuméAfin d'accroître la motivation des garçons pour l'apprentissage des langues, certaines études ont suggéré d'enseigner les langues secondes ou étrangères à des classes de garçons exclusivement (Carr & Pauwels, 2006; Chambers, 2005. Malgré le bénéfice confirmé d'un tel contexte, il n'existe aucune recherche similaire connue sur ce sujet au Canada ou aux États Unis. Pour remédier à cette lacune, on a conduit au printemps 2008 une étude portant sur l'impact de l'enseignement non mixte sur la motivation des élèves à apprendre l'espagnol. Selon le modèle de Gardner quant à la motivation dans l'apprentissage d'une langue seconde (1985, 57 élèves au niveau secondaire apprenant l'espagnol dans des classes mixtes et non mixtes ont rempli avant et après le cours, des questionnaires destinés à mesurer leur motivation. Le suivi a été assuré par le biais d' entrevues avec élèves et professeurs. Les résultats montrent que si les élèves des

  16. P-type Cu2O/SnO bilayer thin film transistors processed at low temperatures

    KAUST Repository

    Al-Jawhari, Hala A.

    2013-10-09

    P-type Cu2O/SnO bilayer thin film transistors (TFTs) with tunable performance were fabricated using room temperature sputtered copper and tin oxides. Using Cu2O film as capping layer on top of a SnO film to control its stoichiometry, we have optimized the performance of the resulting bilayer transistor. A transistor with 10 nm/15 nm Cu2O to SnO thickness ratio (25 nm total thickness) showed the best performance using a maximum process temperature of 170 C. The bilayer transistor exhibited p-type behavior with field-effect mobility, on-to-off current ratio, and threshold voltage of 0.66 cm2 V-1 s-1, 1.5×10 2, and -5.2 V, respectively. The advantages of the bilayer structure relative to single layer transistor are discussed. © 2013 American Chemical Society.

  17. Carbon Nanotube Synaptic Transistor Network for Pattern Recognition.

    Science.gov (United States)

    Kim, Sungho; Yoon, Jinsu; Kim, Hee-Dong; Choi, Sung-Jin

    2015-11-18

    Inspired by the human brain, a neuromorphic system combining complementary metal-oxide semiconductor (CMOS) and adjustable synaptic devices may offer new computing paradigms by enabling massive neural-network parallelism. In particular, synaptic devices, which are capable of emulating the functions of biological synapses, are used as the essential building blocks for an information storage and processing system. However, previous synaptic devices based on two-terminal resistive devices remain challenging because of their variability and specific physical mechanisms of resistance change, which lead to a bottleneck in the implementation of a high-density synaptic device network. Here we report that a three-terminal synaptic transistor based on carbon nanotubes can provide reliable synaptic functions that encode relative timing and regulate weight change. In addition, using system-level simulations, the developed synaptic transistor network associated with CMOS circuits can perform unsupervised learning for pattern recognition using a simplified spike-timing-dependent plasticity scheme.

  18. Identifying fluorescently labeled single molecules in image stacks using machine learning.

    Science.gov (United States)

    Rifkin, Scott A

    2011-01-01

    In the past several years, a host of new technologies have made it possible to visualize single molecules within cells and organisms (Raj et al., Nat Methods 5:877-879, 2008; Paré et al., Curr Biol 19:2037-2042, 2009; Lu and Tsourkas, Nucleic Acids Res 37:e100, 2009; Femino et al., Science 280:585-590, 1998; Rodriguez et al., Semin Cell Dev Biol 18:202-208, 2007; Betzig et al., Science 313:1642-1645, 2006; Rust et al., Nat Methods 3:793-796, 2006; Fusco et al., Curr Biol 13:161-167, 2003). Many of these are based on fluorescence, either fluorescent proteins or fluorescent dyes coupled to a molecule of interest. In many applications, the fluorescent signal is limited to a few pixels, which poses a classic signal processing problem: how can actual signal be distinguished from background noise? In this chapter, I present a MATLAB (MathWorks (2010) MATLAB. Retrieved from http://www.mathworks.com) software suite designed to work with these single-molecule visualization technologies (Rifkin (2010) spotFinding Suite. http://www.biology.ucsd.edu/labs/rifkin/software.html). It takes images or image stacks from a fluorescence microscope as input and outputs locations of the molecules. Although the software was developed for the specific application of identifying single mRNA transcripts in fixed specimens, it is more general than this and can be used and/or customized for other applications that produce localized signals embedded in a potentially noisy background. The analysis pipeline consists of the following steps: (a) create a gold-standard dataset, (b) train a machine-learning algorithm to classify image features as signal or noise depending upon user defined statistics, (c) run the machine-learning algorithm on a new dataset to identify mRNA locations, and (d) visually inspect and correct the results.

  19. Power transistor module for high current applications

    International Nuclear Information System (INIS)

    Cilyo, F.F.

    1975-01-01

    One of the parts needed for the control system of the 400-GeV accelerator at Fermilab was a power transistor with a safe operating area of 1800A at 50V, dc current gain of 100,000 and 20 kHz bandwidth. Since the commercially available discrete devices and power hybrid packages did not meet these requirements, a power transistor module was developed which performed satisfactorily. By connecting 13 power transistors in parallel, with due consideration for network and heat dissipation problems, and by driving these 13 with another power transistor, a super power transistor is made, having an equivalent current, power, and safe operating area capability of 13 transistors. For higher capabilities, additional modules can be conveniently added. (auth)

  20. Field Effect Transistor in Nanoscale

    Science.gov (United States)

    2017-04-26

    significant alteration in transport behaviour of these molecular junctions. 15. SUBJECT TERMS Theory , Nanoscale, Field Effect Transistor (FET), Devices...Density Functional Theory (DFT), Non-equilibrium Green Function 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT SAR 18. NUMBER OF PAGES     13...Keep in mind the amount of funding you received relative to the amount of effort you put into the report. References: 1. J. R. Heath and M

  1. High current transistor pulse generator

    Science.gov (United States)

    Nesterov, V.; Cassel, R.

    1991-05-01

    A solid state pulse generator capable of delivering high current trapezoidally shaped pulses into an inductive load has been developed at SLAC. Energy stored in the capacitor bank of the pulse generator is switched to the load through a pair of Darlington transistors. A combination of diodes and Darlington transistors is used to obtain trapezoidal or triangular shaped current pulses into an inductive load and to recover the remaining energy in the same capacitor bank without reversing capacitor voltage. The transistors work in the switch mode, and the power losses are low. The rack mounted pulse generators presently used at SLAC contain a 660 microfarad storage capacitor bank and can deliver 400 amps at 800 volts into inductive loads up to 3 mH. The pulse generators are used in several different power systems, including pulse to pulse bipolar power supplies and in application with current pulses distributed into different inductive loads. The current amplitude and discharge time are controlled by the central computer system through a specially developed multichannel controller. Several years of operation with the pulse generators have proven their consistent performance and reliability.

  2. High current transistor pulse generator

    International Nuclear Information System (INIS)

    Nesterov, V.; Cassel, R.

    1991-05-01

    A solid state pulse generator capable of delivering high current trapezoidally shaped pulses into an inductive load has been developed at SLAC. Energy stored in the capacitor bank of the pulse generator is switched to the load through a pair of Darlington transistors. A combination of diodes and Darlington transistors is used to obtain trapezoidal or triangular shaped current pulses into an inductive load and to recover the remaining energy in the same capacitor bank without reversing capacitor voltage. The transistors work in the switch mode, and the power losses are low. The rack mounted pulse generators presently used at SLAC contain a 660 microfarad storage capacitor bank and can deliver 400 amps at 800 volts into inductive loads up to 3 mH. The pulse generators are used in several different power systems, including pulse to pulse bipolar power supplies and in application with current pulses distributed into different inductive loads. The current amplitude and discharge time are controlled by the central computer system through a specially developed multichannel controller. Several years of operation with the pulse generators have proven their consistent performance and reliability. 8 figs

  3. Single image super-resolution via regularized extreme learning regression for imagery from microgrid polarimeters

    Science.gov (United States)

    Sargent, Garrett C.; Ratliff, Bradley M.; Asari, Vijayan K.

    2017-08-01

    The advantage of division of focal plane imaging polarimeters is their ability to obtain temporally synchronized intensity measurements across a scene; however, they sacrifice spatial resolution in doing so due to their spatially modulated arrangement of the pixel-to-pixel polarizers and often result in aliased imagery. Here, we propose a super-resolution method based upon two previously trained extreme learning machines (ELM) that attempt to recover missing high frequency and low frequency content beyond the spatial resolution of the sensor. This method yields a computationally fast and simple way of recovering lost high and low frequency content from demosaicing raw microgrid polarimetric imagery. The proposed method outperforms other state-of-the-art single-image super-resolution algorithms in terms of structural similarity and peak signal-to-noise ratio.

  4. Automatic pathology classification using a single feature machine learning support - vector machines

    Science.gov (United States)

    Yepes-Calderon, Fernando; Pedregosa, Fabian; Thirion, Bertrand; Wang, Yalin; Lepore, Natasha

    2014-03-01

    Magnetic Resonance Imaging (MRI) has been gaining popularity in the clinic in recent years as a safe in-vivo imaging technique. As a result, large troves of data are being gathered and stored daily that may be used as clinical training sets in hospitals. While numerous machine learning (ML) algorithms have been implemented for Alzheimer's disease classification, their outputs are usually difficult to interpret in the clinical setting. Here, we propose a simple method of rapid diagnostic classification for the clinic using Support Vector Machines (SVM)1 and easy to obtain geometrical measurements that, together with a cortical and sub-cortical brain parcellation, create a robust framework capable of automatic diagnosis with high accuracy. On a significantly large imaging dataset consisting of over 800 subjects taken from the Alzheimer's Disease Neuroimaging Initiative (ADNI) database, classification-success indexes of up to 99.2% are reached with a single measurement.

  5. Flexible Sensory Platform Based on Oxide-based Neuromorphic Transistors.

    Science.gov (United States)

    Liu, Ning; Zhu, Li Qiang; Feng, Ping; Wan, Chang Jin; Liu, Yang Hui; Shi, Yi; Wan, Qing

    2015-12-11

    Inspired by the dendritic integration and spiking operation of a biological neuron, flexible oxide-based neuromorphic transistors with multiple input gates are fabricated on flexible plastic substrates for pH sensor applications. When such device is operated in a quasi-static dual-gate synergic sensing mode, it shows a high pH sensitivity of ~105 mV/pH. Our results also demonstrate that single-spike dynamic mode can remarkably improve pH sensitivity and reduce response/recover time and power consumption. Moreover, we find that an appropriate negative bias applied on the sensing gate electrode can further enhance the pH sensitivity and reduce the power consumption. Our flexible neuromorphic transistors provide a new-concept sensory platform for biochemical detection with high sensitivity, rapid response and ultralow power consumption.

  6. Graphene-graphite oxide field-effect transistors.

    Science.gov (United States)

    Standley, Brian; Mendez, Anthony; Schmidgall, Emma; Bockrath, Marc

    2012-03-14

    Graphene's high mobility and two-dimensional nature make it an attractive material for field-effect transistors. Previous efforts in this area have used bulk gate dielectric materials such as SiO(2) or HfO(2). In contrast, we have studied the use of an ultrathin layered material, graphene's insulating analogue, graphite oxide. We have fabricated transistors comprising single or bilayer graphene channels, graphite oxide gate insulators, and metal top-gates. The graphite oxide layers show relatively minimal leakage at room temperature. The breakdown electric field of graphite oxide was found to be comparable to SiO(2), typically ~1-3 × 10(8) V/m, while its dielectric constant is slightly higher, κ ≈ 4.3. © 2012 American Chemical Society

  7. Machine Learning Based Single-Frame Super-Resolution Processing for Lensless Blood Cell Counting

    Directory of Open Access Journals (Sweden)

    Xiwei Huang

    2016-11-01

    Full Text Available A lensless blood cell counting system integrating microfluidic channel and a complementary metal oxide semiconductor (CMOS image sensor is a promising technique to miniaturize the conventional optical lens based imaging system for point-of-care testing (POCT. However, such a system has limited resolution, making it imperative to improve resolution from the system-level using super-resolution (SR processing. Yet, how to improve resolution towards better cell detection and recognition with low cost of processing resources and without degrading system throughput is still a challenge. In this article, two machine learning based single-frame SR processing types are proposed and compared for lensless blood cell counting, namely the Extreme Learning Machine based SR (ELMSR and Convolutional Neural Network based SR (CNNSR. Moreover, lensless blood cell counting prototypes using commercial CMOS image sensors and custom designed backside-illuminated CMOS image sensors are demonstrated with ELMSR and CNNSR. When one captured low-resolution lensless cell image is input, an improved high-resolution cell image will be output. The experimental results show that the cell resolution is improved by 4×, and CNNSR has 9.5% improvement over the ELMSR on resolution enhancing performance. The cell counting results also match well with a commercial flow cytometer. Such ELMSR and CNNSR therefore have the potential for efficient resolution improvement in lensless blood cell counting systems towards POCT applications.

  8. High-Content Analysis of Breast Cancer Using Single-Cell Deep Transfer Learning.

    Science.gov (United States)

    Kandaswamy, Chetak; Silva, Luís M; Alexandre, Luís A; Santos, Jorge M

    2016-03-01

    High-content analysis has revolutionized cancer drug discovery by identifying substances that alter the phenotype of a cell, which prevents tumor growth and metastasis. The high-resolution biofluorescence images from assays allow precise quantitative measures enabling the distinction of small molecules of a host cell from a tumor. In this work, we are particularly interested in the application of deep neural networks (DNNs), a cutting-edge machine learning method, to the classification of compounds in chemical mechanisms of action (MOAs). Compound classification has been performed using image-based profiling methods sometimes combined with feature reduction methods such as principal component analysis or factor analysis. In this article, we map the input features of each cell to a particular MOA class without using any treatment-level profiles or feature reduction methods. To the best of our knowledge, this is the first application of DNN in this domain, leveraging single-cell information. Furthermore, we use deep transfer learning (DTL) to alleviate the intensive and computational demanding effort of searching the huge parameter's space of a DNN. Results show that using this approach, we obtain a 30% speedup and a 2% accuracy improvement. © 2016 Society for Laboratory Automation and Screening.

  9. One-trial spatial learning: wild hummingbirds relocate a reward after a single visit.

    Science.gov (United States)

    Flores-Abreu, I Nuri; Hurly, T Andrew; Healy, Susan D

    2012-07-01

    Beaconing to rewarded locations is typically achieved by visual recognition of the actual goal. Spatial recognition, on the other hand, can occur in the absence of the goal itself, relying instead on the landmarks surrounding the goal location. Although the duration or frequency of experiences that an animal needs to learn the landmarks surrounding a goal have been extensively studied with a variety of laboratory tasks, little is known about the way in which wild vertebrates use them in their natural environment. Here, we allowed hummingbirds to feed once only from a rewarding flower (goal) before it was removed. When we presented a similar flower at a different height in another location, birds frequently returned to the location the flower had previously occupied (spatial recognition) before flying to the flower itself (beaconing). After experiencing three rewarded flowers, each in a different location, they were more likely to beacon to the current visible flower than they were to return to previously rewarded locations (without a visible flower). These data show that hummingbirds can encode a rewarded location on the basis of the surrounding landmarks after a single visit. After multiple goal location manipulations, however, the birds changed their strategy to beaconing presumably because they had learned that the flower itself reliably signalled reward.

  10. Defining the learning curve of laparoendoscopic single-site Heller myotomy.

    Science.gov (United States)

    Ross, Sharona B; Luberice, Kenneth; Kurian, Tony J; Paul, Harold; Rosemurgy, Alexander S

    2013-08-01

    Initial outcomes suggest laparoendoscopic single-site (LESS) Heller myotomy with anterior fundoplication provides safe, efficacious, and cosmetically superior outcomes relative to conventional laparoscopy. This study was undertaken to define the learning curve of LESS Heller myotomy with anterior fundoplication. One hundred patients underwent LESS Heller myotomy with anterior fundoplication. Symptom frequency and severity were scored using a Likert scale (0 = never/not bothersome to 10 = always/very bothersome). Symptom resolution, additional trocars, and complications were compared among patient quartiles. Median data are presented. Preoperative frequency/severity scores were: dysphagia = 10/8 and regurgitation = 8/7. Additional trocars were placed in 12 patients (10%), of whom all were in the first two quartiles. Esophagotomy/gastrotomy occurred in three patients. Postoperative complications occurred in 9 per cent. No conversions to "open" operations occurred. Length of stay was 1 day. Postoperative frequency/severity scores were: dysphagia = 2/0 and regurgitation = 0/0; scores were less than before myotomy (P learning curve of LESS Heller myotomy with anterior fundoplication is short and safe, because proficiency is quickly attained.

  11. Solution-processed ambipolar organic field-effect transistors and inverters.

    Science.gov (United States)

    Meijer, E J; de Leeuw, D M; Setayesh, S; van Veenendaal, E; Huisman, B H; Blom, P W M; Hummelen, J C; Scherf, U; Kadam, J; Klapwijk, T M

    2003-10-01

    There is ample evidence that organic field-effect transistors have reached a stage where they can be industrialized, analogous to standard metal oxide semiconductor (MOS) transistors. Monocrystalline silicon technology is largely based on complementary MOS (CMOS) structures that use both n-type and p-type transistor channels. This complementary technology has enabled the construction of digital circuits, which operate with a high robustness, low power dissipation and a good noise margin. For the design of efficient organic integrated circuits, there is an urgent need for complementary technology, where both n-type and p-type transistor operation is realized in a single layer, while maintaining the attractiveness of easy solution processing. We demonstrate, by using solution-processed field-effect transistors, that hole transport and electron transport are both generic properties of organic semiconductors. This ambipolar transport is observed in polymers based on interpenetrating networks as well as in narrow bandgap organic semiconductors. We combine the organic ambipolar transistors into functional CMOS-like inverters.

  12. A single-operator learning curve analysis for the endoscopic sleeve gastroplasty.

    Science.gov (United States)

    Saumoy, Monica; Schneider, Yecheskel; Zhou, Xi Kathy; Shukla, Alpana; Kahaleh, Michel; Aronne, Louis; Sharaiha, Reem Z

    2018-02-01

    Endoscopic sleeve gastroplasty (ESG) is a novel, incisionless technique for gastric volume reduction to promote weight loss. Our aim was to describe the learning curve for performing ESG using a prospective case series. Using a prospective case series design, we analyzed the first 128 consecutive patients at a tertiary care academic medical center who underwent ESG performed by a single operator from August 2013 to December 2016. Efficiency (refining performance to decrease procedure time) and mastery (absence of outliers) for performing ESG was evaluated by using a penalized basis-spline regression and cumulative sum analysis. Efficiency for ESG was attained after 38 ESGs, with mastery after 55 procedures. At 12 months, the mean percent total body weight loss was 15.8% (standard deviation, 9.47%). A total of 71.7% of patients achieved successful weight loss. When using multiple linear regression analysis, both number of sutures and baseline weight were significantly associated with procedure time. Other patient characteristics, such as age, sex, and race, did not significantly affect procedure time. In addition, number of sutures, baseline weight, and endoscopist achieving efficiency were not correlated with successful weight loss at 12 months. Mastery of ESG by a single operator is suggested after sufficient endoscopic experience and may help guide widespread clinical adaptability. Copyright © 2018. Published by Elsevier Inc.

  13. Massively parallel unsupervised single-particle cryo-EM data clustering via statistical manifold learning.

    Science.gov (United States)

    Wu, Jiayi; Ma, Yong-Bei; Congdon, Charles; Brett, Bevin; Chen, Shuobing; Xu, Yaofang; Ouyang, Qi; Mao, Youdong

    2017-01-01

    Structural heterogeneity in single-particle cryo-electron microscopy (cryo-EM) data represents a major challenge for high-resolution structure determination. Unsupervised classification may serve as the first step in the assessment of structural heterogeneity. However, traditional algorithms for unsupervised classification, such as K-means clustering and maximum likelihood optimization, may classify images into wrong classes with decreasing signal-to-noise-ratio (SNR) in the image data, yet demand increased computational costs. Overcoming these limitations requires further development of clustering algorithms for high-performance cryo-EM data processing. Here we introduce an unsupervised single-particle clustering algorithm derived from a statistical manifold learning framework called generative topographic mapping (GTM). We show that unsupervised GTM clustering improves classification accuracy by about 40% in the absence of input references for data with lower SNRs. Applications to several experimental datasets suggest that our algorithm can detect subtle structural differences among classes via a hierarchical clustering strategy. After code optimization over a high-performance computing (HPC) environment, our software implementation was able to generate thousands of reference-free class averages within hours in a massively parallel fashion, which allows a significant improvement on ab initio 3D reconstruction and assists in the computational purification of homogeneous datasets for high-resolution visualization.

  14. Massively parallel unsupervised single-particle cryo-EM data clustering via statistical manifold learning

    Science.gov (United States)

    Wu, Jiayi; Ma, Yong-Bei; Congdon, Charles; Brett, Bevin; Chen, Shuobing; Xu, Yaofang; Ouyang, Qi

    2017-01-01

    Structural heterogeneity in single-particle cryo-electron microscopy (cryo-EM) data represents a major challenge for high-resolution structure determination. Unsupervised classification may serve as the first step in the assessment of structural heterogeneity. However, traditional algorithms for unsupervised classification, such as K-means clustering and maximum likelihood optimization, may classify images into wrong classes with decreasing signal-to-noise-ratio (SNR) in the image data, yet demand increased computational costs. Overcoming these limitations requires further development of clustering algorithms for high-performance cryo-EM data processing. Here we introduce an unsupervised single-particle clustering algorithm derived from a statistical manifold learning framework called generative topographic mapping (GTM). We show that unsupervised GTM clustering improves classification accuracy by about 40% in the absence of input references for data with lower SNRs. Applications to several experimental datasets suggest that our algorithm can detect subtle structural differences among classes via a hierarchical clustering strategy. After code optimization over a high-performance computing (HPC) environment, our software implementation was able to generate thousands of reference-free class averages within hours in a massively parallel fashion, which allows a significant improvement on ab initio 3D reconstruction and assists in the computational purification of homogeneous datasets for high-resolution visualization. PMID:28786986

  15. Massively parallel unsupervised single-particle cryo-EM data clustering via statistical manifold learning.

    Directory of Open Access Journals (Sweden)

    Jiayi Wu

    Full Text Available Structural heterogeneity in single-particle cryo-electron microscopy (cryo-EM data represents a major challenge for high-resolution structure determination. Unsupervised classification may serve as the first step in the assessment of structural heterogeneity. However, traditional algorithms for unsupervised classification, such as K-means clustering and maximum likelihood optimization, may classify images into wrong classes with decreasing signal-to-noise-ratio (SNR in the image data, yet demand increased computational costs. Overcoming these limitations requires further development of clustering algorithms for high-performance cryo-EM data processing. Here we introduce an unsupervised single-particle clustering algorithm derived from a statistical manifold learning framework called generative topographic mapping (GTM. We show that unsupervised GTM clustering improves classification accuracy by about 40% in the absence of input references for data with lower SNRs. Applications to several experimental datasets suggest that our algorithm can detect subtle structural differences among classes via a hierarchical clustering strategy. After code optimization over a high-performance computing (HPC environment, our software implementation was able to generate thousands of reference-free class averages within hours in a massively parallel fashion, which allows a significant improvement on ab initio 3D reconstruction and assists in the computational purification of homogeneous datasets for high-resolution visualization.

  16. Implementation of a single sign-on system between practice, research and learning systems.

    Science.gov (United States)

    Purkayastha, Saptarshi; Gichoya, Judy W; Addepally, Siva Abhishek

    2017-03-29

    Multiple specialized electronic medical systems are utilized in the health enterprise. Each of these systems has their own user management, authentication and authorization process, which makes it a complex web for navigation and use without a coherent process workflow. Users often have to remember multiple passwords, login/logout between systems that disrupt their clinical workflow. Challenges exist in managing permissions for various cadres of health care providers. This case report describes our experience of implementing a single sign-on system, used between an electronic medical records system and a learning management system at a large academic institution with an informatics department responsible for student education and a medical school affiliated with a hospital system caring for patients and conducting research. At our institution, we use OpenMRS for research registry tracking of interventional radiology patients as well as to provide access to medical records to students studying health informatics. To provide authentication across different users of the system with different permissions, we developed a Central Authentication Service (CAS) module for OpenMRS, released under the Mozilla Public License and deployed it for single sign-on across the academic enterprise. The module has been in implementation since August 2015 to present, and we assessed usability of the registry and education system before and after implementation of the CAS module. 54 students and 3 researchers were interviewed. The module authenticates users with appropriate privileges in the medical records system, providing secure access with minimal disruption to their workflow. No passwords requests were sent and users reported ease of use, with streamlined workflow. The project demonstrates that enterprise-wide single sign-on systems should be used in healthcare to reduce complexity like "password hell", improve usability and user navigation. We plan to extend this to work with other

  17. Nanowire Field-Effect Transistors : Sensing Simplicity?

    NARCIS (Netherlands)

    Mescher, M.

    2014-01-01

    Silicon nanowires are structures made from silicon with at least one spatial dimension in the nanometer regime (1-100 nm). From these nanowires, silicon nanowire field-effect transistors can be constructed. Since their introduction in 2001 silicon nanowire field-effect transistors have been studied

  18. Ultrasmall transistor-based light sources

    DEFF Research Database (Denmark)

    With Jensen, Per Baunegaard; Tavares, Luciana; Kjelstrup-Hansen, Jakob

    Dette projekt fokuserer på at udvikle transistor baserede nanofiber lyskilder med det overordnede mål at udvikle effektive og nano skalerede flerfarvede lyskilder integreret on-chip.......Dette projekt fokuserer på at udvikle transistor baserede nanofiber lyskilder med det overordnede mål at udvikle effektive og nano skalerede flerfarvede lyskilder integreret on-chip....

  19. Operation and modeling of the MOS transistor

    CERN Document Server

    Tsividis, Yannis

    2011-01-01

    Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor - the key element of modern microelectronic chips.

  20. Ferroelectric transistor memory arrays on flexible foils

    NARCIS (Netherlands)

    Breemen, A. van; Kam, B.; Cobb, B.; Rodriguez, F.G.; Heck, G. van; Myny, K.; Marrani, A.; Vinciguerra, V.; Gelinck, G.H.

    2013-01-01

    In this paper, we successfully fabricated and operated passive matrix P(VDF-TrFE) transistor arrays, i.e. memory arrays in which no pass-transistors or other additional electronic components are used. Because of the smaller cell, a higher integration density is possible. We demonstrate arrays up to

  1. The spinvalve transistor: technologies and progress

    NARCIS (Netherlands)

    Lodder, J.C.; Monsma, D.J.; Vlutters, R.; Shimatsu, T.; Shimatsu, T.

    1999-01-01

    The paper describes the necessary technologies needed for realising a RT operating spin-valve transistor (SVT) which is in fact a magnetic controlled metal base transistor. The preparation of a 350×350 μm2 SVT consisting of an Si emitter and collector and Co/Cu/Co GMR multilayer are described. The

  2. Floating-Emitter Solar-Cell Transistor

    Science.gov (United States)

    Sah, C. T.; Cheng, L. J.

    1986-01-01

    Conceptual transistor embedded in photovoltaic diode promises to increase efficiency to more than 20 percent. Solar-cell transistor has front-surface contact, rear contact, and floating emitter. Variety of other contact and junction configurations possible, but do not offer ease of fabrication in combination with high performance.

  3. Universal power transistor base drive control unit

    Science.gov (United States)

    Gale, Allan R.; Gritter, David J.

    1988-01-01

    A saturation condition regulator system for a power transistor which achieves the regulation objectives of a Baker clamp but without dumping excess base drive current into the transistor output circuit. The base drive current of the transistor is sensed and used through an active feedback circuit to produce an error signal which modulates the base drive current through a linearly operating FET. The collector base voltage of the power transistor is independently monitored to develop a second error signal which is also used to regulate base drive current. The current-sensitive circuit operates as a limiter. In addition, a fail-safe timing circuit is disclosed which automatically resets to a turn OFF condition in the event the transistor does not turn ON within a predetermined time after the input signal transition.

  4. Magnetoamplification in a bipolar magnetic junction transistor.

    Science.gov (United States)

    Rangaraju, N; Peters, J A; Wessels, B W

    2010-09-10

    We have demonstrated the first bipolar magnetic junction transistor using a dilute magnetic semiconductor. For an InMnAs p-n-p transistor magnetoamplification is observed at room temperature. The observed magnetoamplification is attributed to the magnetoresistance of the magnetic semiconductor InMnAs heterojunction. The magnetic field dependence of the transistor characteristics confirm that the magnetoamplification results from the junction magnetoresistance. To describe the experimentally observed transistor characteristics, we propose a modified Ebers-Moll model that includes a series magnetoresistance attributed to spin-selective conduction. The capability of magnetic field control of the amplification in an all-semiconductor transistor at room temperature potentially enables the creation of new computer logic architecture where the spin of the carriers is utilized.

  5. High Sensitivity Magnetic Field Sensors Based on Nano-Polysilicon Thin-Film Transistors

    International Nuclear Information System (INIS)

    Zhao Xiao-Feng; Wen Dian-Zhong; Zhuang Cui-Cui; Liu Gang; Wang Zhi-Qiang

    2012-01-01

    A high-sensitivity magnetic field sensor based on the nano-polysilicon thin film transistors is proposed to adopt the nano-polysilicon thin films and the nano-polysilicon/single silicon heterojunction interfaces as the sensing layers. By using CMOS technology, the fabrication of the nano-polysilicon thin film transistors with Hall probes can be achieved on the 〈100〉 high resistivity single silicon substrates, in which the thicknesses of the nano-polysilicon thin films are 120 nm and the length width ratio of the channel is 320 μm/80 μm. When V DS = 5.0 V, the magnetic sensitivity and linearity is 264 mV/T and 0.23%f.s. (full scale), respectively. The experimental results show that the magnetic sensors based on nano-polysilicon thin film transistors with Hall probes exhibit high sensitivity

  6. Nanofluidic diode and bipolar transistor.

    Science.gov (United States)

    Daiguji, Hirofumi; Oka, Yukiko; Shirono, Katsuhiro

    2005-11-01

    Theoretical modeling of ionic distribution and transport in a nanochannel containing a surface charge on its wall, 30 nm high and 5 microm long, suggests that ionic current can be controlled by locally modifying the surface charge density through a gate electrode, even if the electrical double layers are not overlapped. When the surface charge densities at the right and left halves of a channel are the same absolute value but of different signs, this could form the basis of a nanofluidic diode. When the surface charge density at the middle part of a channel is modified, this could form the basis of a nanofluidic bipolar transistor.

  7. Location and direction specificity in motion direction learning associated with a single-level method of constant stimuli.

    Science.gov (United States)

    Xiong, Ying-Zi; Xie, Xin-Yu; Yu, Cong

    2016-02-01

    Recent studies reported significantly less location specificity in motion direction learning than in previous classical studies. The latter performed training with the method of constant stimuli containing a single level of direction difference. In contrast the former used staircase methods that varied the direction difference trial by trial. We suspect that extensive practice with a single direction difference could allow an observer to use some subtle local cues for direction discrimination. Such local cues may be unavailable at a new stimulus location, leading to higher location specificity. To test this hypothesis, we jittered slightly the directions of a stimulus pair by the same amount while keeping the direction difference constant, so as to disturb the potential local cues. We observed significantly more transfer of learning to untrained locations. The local cue effects may also explain the recent controversies regarding the finding that foveal motion direction learning becomes significantly more transferrable to a new direction with TPE (training-plus-exposure) training. One specific study by Zili Liu and collaborators that challenges this finding also used a single-level direction difference for training. We first replicated their results. But we found that if the directions of the stimulus pair were again jittered while the direction difference was kept constant, motion direction learning transferred significantly more to an orthogonal direction with TPE training. Our results thus demonstrate the importance of using appropriate psychophysical methods in training to reduce local-cue related specificity in perceptual learning. Copyright © 2015 Elsevier Ltd. All rights reserved.

  8. Relational Teaching with Black Boys: Strategies for Learning at a Single-Sex Middle School for Boys of Color

    Science.gov (United States)

    Nelson, Joseph Derrick

    2016-01-01

    Background/Context: Positive teacher-student relationships are critical for Black boys' learning across single-sex and coeducational environments. Limited attention to these relationships by school professionals is rooted in deficit-oriented conceptions of boyhood and Black masculinity. The popular message of deficiency and pathology is clear:…

  9. The Development and Evaluation of an Online Formative Assessment upon Single-Player Game in E-Learning Environment

    Science.gov (United States)

    Tsai, Fu-Hsing

    2013-01-01

    This study developed a game-based formative assessment, called tic-tac-toe quiz for single-player version (TRIS-Q-SP), in an energy education e-learning system. This assessment game combined tic-tac-toe with online assessment, and revised the rule of tic-tac-toe for stimulating students to use online formative assessment actively. Additionally, to…

  10. Interdigitated Extended Gate Field Effect Transistor Without Reference Electrode

    Science.gov (United States)

    Ali, Ghusoon M.

    2017-02-01

    An interdigitated extended gate field effect transistor (IEGFET) has been proposed as a modified pH sensor structure of an extended gate field effect transistor (EGFET). The reference electrode and the extended gate in the conventional device have been replaced by a single interdigitated extended gate. A metal-semiconductor-metal interdigitated extended gate containing two multi-finger Ni electrodes based on zinc oxide (ZnO) thin film as a pH-sensitive membrane. ZnO thin film was grown on a p-type Si (100) substrate by the sol-gel technique. The fabricated extended gate is connected to a commercial metal-oxide-semiconductor field-effect transistor device in CD4007UB. The experimental data show that this structure has real time and linear pH voltage and current sensitivities in a concentration range between pH 4 and 11. The voltage and current sensitivities are found to be about 22.4 mV/pH and 45 μA/pH, respectively. Reference electrode elimination makes the IEGFET device simple to fabricate, easy to carry out the measurements, needing a small volume of solution to test and suitable for disposable biosensor applications. Furthermore, this uncomplicated structure could be extended to fabricate multiple ions microsensors and lab-on-chip devices.

  11. Polymer-electrolyte-gated nanowire synaptic transistors for neuromorphic applications

    Science.gov (United States)

    Zou, Can; Sun, Jia; Gou, Guangyang; Kong, Ling-An; Qian, Chuan; Dai, Guozhang; Yang, Junliang; Guo, Guang-hua

    2017-09-01

    Polymer-electrolytes are formed by dissolving a salt in polymer instead of water, the conducting mechanism involves the segmental motion-assisted diffusion of ion in the polymer matrix. Here, we report on the fabrication of tin oxide (SnO2) nanowire synaptic transistors using polymer-electrolyte gating. A thin layer of poly(ethylene oxide) and lithium perchlorate (PEO/LiClO4) was deposited on top of the devices, which was used to boost device performances. A voltage spike applied on the in-plane gate attracts ions toward the polymer-electrolyte/SnO2 nanowire interface and the ions are gradually returned after the pulse is removed, which can induce a dynamic excitatory postsynaptic current in the nanowire channel. The SnO2 synaptic transistors exhibit the behavior of short-term plasticity like the paired-pulse facilitation and self-adaptation, which is related to the electric double-effect regulation. In addition, the synaptic logic functions and the logical function transformation are also discussed. Such single SnO2 nanowire-based synaptic transistors are of great importance for future neuromorphic devices.

  12. Tribotronic Transistor Array as an Active Tactile Sensing System.

    Science.gov (United States)

    Yang, Zhi Wei; Pang, Yaokun; Zhang, Limin; Lu, Cunxin; Chen, Jian; Zhou, Tao; Zhang, Chi; Wang, Zhong Lin

    2016-12-27

    Large-scale tactile sensor arrays are of great importance in flexible electronics, human-robot interaction, and medical monitoring. In this paper, a flexible 10 × 10 tribotronic transistor array (TTA) is developed as an active tactile sensing system by incorporating field-effect transistor units and triboelectric nanogenerators into a polyimide substrate. The drain-source current of each tribotronic transistor can be individually modulated by the corresponding external contact, which has induced a local electrostatic potential to act as the conventional gate voltage. By scaling down the pixel size from 5 × 5 to 0.5 × 0.5 mm 2 , the sensitivities of single pixels are systematically investigated. The pixels of the TTA show excellent durability, independence, and synchronicity, which are suitable for applications in real-time tactile sensing, motion monitoring, and spatial mapping. The integrated tribotronics provides an unconventional route to realize an active tactile sensing system, with prospective applications in wearable electronics, human-machine interfaces, fingerprint identification, and so on.

  13. Electrical/optical dual-function redox potential transistor

    Science.gov (United States)

    Li, Shunpu; Wang, Wensi; Xu, Ju; Chu, Daping; Shen, Z. John; Roy, Saibal

    2013-01-01

    We demonstrate a new type of transistors, the electrical/optical “dual-function redox-potential transistors”, which is solution processable and environmentally stable. This device consists of vertically staked electrodes that act as gate, emitter and collector. It can perform as a normal transistor, whilst one electrode which is sensitised by dye enables to generate photocurrent when illuminated. Solution processable oxide-nanoparticles were used to form various functional layers, which allow an electrolyte to penetrate through and, consequently, the current between emitter and collector can be controlled by the gate potential modulated distribution of ions. The result here shows that the device performs with high ON-current under low driving voltage (transistor performance can readily be controlled by photo-illumination. Such device with combined optical and electrical functionalities allows single device to perform the tasks that are usually done by a circuit/system with multiple optical and electrical components, and it is promising for various applications. PMID:24310311

  14. Conformal transistor arrays based on solution-processed organic crystals.

    Science.gov (United States)

    Zhao, Xiaoli; Zhang, Bing; Tang, Qingxin; Ding, Xueyan; Wang, Shuya; Zhou, Yuying; Tong, Yanhong; Liu, Yichun

    2017-11-13

    Conformal transistor array based on solution-processed organic crystals, which can provide sensory and scanning features for monitoring, biofeedback, and tracking of physiological function, presents one of the most promising technologies for future large-scale low-cost wearable and implantable electronics. However, it is still a huge challenge for the integration of solution-processed organic crystals into conformal FETs owing to a generally existing swelling phenomenon of the elastic materials and the lack of the corresponding device fabrication technology. Here, we present a promising route to fabricate a conformal field-effect transistor (FET) array based on solution-processed TIPS-pentacene single-crystal micro/nanowire array. By simply drop-casting the organic solution on an anti-solvent photolithography-compatible electrode with bottom-contact coplanar configuration, the transistor array can be formed and can conform onto uneven objects. Excellent electrical properties with device yield as high as 100%, field-effect mobility up to 0.79 cm 2 V -1 s -1 , low threshold voltage, and good device uniformity are demonstrated. The results open up the capability of solution-processed organic crystals for conformal electronics, suggesting their substantial promise for next-generation wearable and implantable electronics.

  15. Neuromorphic transistor achieved by redox reaction of WO3 thin film

    Science.gov (United States)

    Tsuchiya, Takashi; Jayabalan, Manikandan; Kawamura, Kinya; Takayanagi, Makoto; Higuchi, Tohru; Jayavel, Ramasamy; Terabe, Kazuya

    2018-04-01

    An all-solid-state neuromorphic transistor composed of a WO3 thin film and a proton-conducting electrolyte was fabricated for application to next-generation information and communication technology including artificial neural networks. The drain current exhibited a 4-order-of-magnitude increment by redox reaction of the WO3 thin film owing to proton migration. Learning and forgetting characteristics were well tuned by the gate control of WO3 redox reactions owing to the separation of the current reading path and pulse application path in the transistor structure. This technique should lead to the development of versatile and low-power-consumption neuromorphic devices.

  16. BN / Graphene / BN RF Transistors

    Science.gov (United States)

    Wang, Han; Taychatanapat, Thiti; Hsu, Allen; Jarillo-Herrero, Pablo; Palacios, Tomas

    2011-03-01

    In this work we demonstrate the first BN/graphene/BN transistor for high frequency RF applications. This sandwich structure allows a significant improvement in the mobility of graphene, which reaches more than 18,000 cm2 /Vs at room temperature. Graphene field effect transistors (GFETs) have been fabricated with LDS = 800 nm and LG = 300 nm. The minimum conduction point of these devices is very close to zero, a result of the negligible substrate doping to the graphene. A current density in excess of 1 A/mm and DC transconductance above 200 mS/mm are achieved for both electron and hole conductions. RF characterization is performed for the first time on this device structure and initial results show a current-gain cut-off frequency fT = 10 GHz. These experimental results have been combined with simulations of the small-signal model to study the scaling potential of these GFETs for high frequency applications. The impact of the access resistances (Rs , Rd) , the capacitances (Cgs , Cgd , Cds) , and the transconductance (g m) on the frequency performance of the GFETs has also been studied. Finally, the fabricated devices have been compared to GFETs fabricated with Si O2 substrate and Al 2 O3 gate dielectrics. The improved performance obtained by the BN/graphene/BN structure is very promising to enable the next generation of high frequency RF electronics.

  17. Single-image super-resolution reconstruction via learned geometric dictionaries and clustered sparse coding.

    Science.gov (United States)

    Yang, Shuyuan; Wang, Min; Chen, Yiguang; Sun, Yaxin

    2012-09-01

    Recently, single image super-resolution reconstruction (SISR) via sparse coding has attracted increasing interest. In this paper, we proposed a multiple-geometric-dictionaries-based clustered sparse coding scheme for SISR. Firstly, a large number of high-resolution (HR) image patches are randomly extracted from a set of example training images and clustered into several groups of "geometric patches," from which the corresponding "geometric dictionaries" are learned to further sparsely code each local patch in a low-resolution image. A clustering aggregation is performed on the HR patches recovered by different dictionaries, followed by a subsequent patch aggregation to estimate the HR image. Considering that there are often many repetitive image structures in an image, we add a self-similarity constraint on the recovered image in patch aggregation to reveal new features and details. Finally, the HR residual image is estimated by the proposed recovery method and compensated to better preserve the subtle details of the images. Some experiments test the proposed method on natural images, and the results show that the proposed method outperforms its counterparts in both visual fidelity and numerical measures.

  18. Prediction of serotonin transporter promoter polymorphism genotypes from single nucleotide polymorphism arrays using machine learning methods.

    Science.gov (United States)

    Lu, Ake Tzu-Hui; Bakker, Steven; Janson, Esther; Cichon, Sven; Cantor, Rita M; Ophoff, Roel A

    2012-08-01

    The serotonin transporter gene (SLC6A4) and its promoter (5-HTTLPR) polymorphism have been the focus of a large number of association studies of behavioral traits and psychiatric disorders. However, large-scale genotyping of the polymorphism has been very difficult. We report the development and validation of a 5-HTTLPR genotype prediction model. The single nucleotide polymorphisms (SNPs) from the 2000 kb region surrounding 5-HTTLPR were used to construct a prediction model through a newly developed machine learning method, multicategory vertex discriminant analysis with 2147 individuals from the Northern Finnish Birth Cohort genotyped with the Illumina 370K SNP array and manually genotyped for 5-HTTLPR polymorphism. The prediction model was applied to SNP genotypes in a Dutch/German schizophrenia case-control sample of 3318 individuals to test the association of the polymorphism with schizophrenia. The prediction model of eight SNPs achieved a 92.4% accuracy rate and a 0.98±0.01 area under the receiving operating characteristic. Evidence for an association of the polymorphism with schizophrenia was observed (P=0.05, odds ratio=1.105). This prediction model provides an effective substitute of manually genotyped 5-HTTLPR alleles, providing a new approach for large scale association studies of this polymorphism.

  19. Structure Based Thermostability Prediction Models for Protein Single Point Mutations with Machine Learning Tools.

    Directory of Open Access Journals (Sweden)

    Lei Jia

    Full Text Available Thermostability issue of protein point mutations is a common occurrence in protein engineering. An application which predicts the thermostability of mutants can be helpful for guiding decision making process in protein design via mutagenesis. An in silico point mutation scanning method is frequently used to find "hot spots" in proteins for focused mutagenesis. ProTherm (http://gibk26.bio.kyutech.ac.jp/jouhou/Protherm/protherm.html is a public database that consists of thousands of protein mutants' experimentally measured thermostability. Two data sets based on two differently measured thermostability properties of protein single point mutations, namely the unfolding free energy change (ddG and melting temperature change (dTm were obtained from this database. Folding free energy change calculation from Rosetta, structural information of the point mutations as well as amino acid physical properties were obtained for building thermostability prediction models with informatics modeling tools. Five supervised machine learning methods (support vector machine, random forests, artificial neural network, naïve Bayes classifier, K nearest neighbor and partial least squares regression are used for building the prediction models. Binary and ternary classifications as well as regression models were built and evaluated. Data set redundancy and balancing, the reverse mutations technique, feature selection, and comparison to other published methods were discussed. Rosetta calculated folding free energy change ranked as the most influential features in all prediction models. Other descriptors also made significant contributions to increasing the accuracy of the prediction models.

  20. Effect of single and fractionated x-irradiation on maze learning ability of mice

    International Nuclear Information System (INIS)

    Aoyama, Takashi; Norimura, Toshiyuki; Nakamura, Takeshi; Yoshikawa, Isao

    1976-01-01

    Fifty-six-day-old male ddk mice at the starting of the investigation were used as subjects through the experiment for 64 weeks. After 15 days' preliminary training, and 16 times of weekly trial training using complete maze, 15 mice received a single 224 rads of x-rays (S group), another 15 mice received two 112 rads spaced two weeks apart (F group) and another 15 mice were sham-irradiated (Control group). Then those mice were tested on the multiple T-maze with nine-choice points and change of performance was observed in terms of errorchoices by giving one test trial a week. We introduced the concept of ''confusional trials'' as an index for surmising to what extent mice failed to exhibit good maze learning habits. In the results, the F group showed significantly worse performance than the two other groups at early stages, opposite to it the S group exhibited the same, but at late stages after irradiation. The worse performance of F group should be considered to be due to the psychological after-effect to fractionated irradiation and that for S group could be assumed to be due to the acceleration of aging by the irradiation. (auth.)

  1. Voltage regulator for battery power source. [using a bipolar transistor

    Science.gov (United States)

    Black, J. M. (Inventor)

    1979-01-01

    A bipolar transistor in series with the battery as the control element also in series with a zener diode and a resistor is used to maintain a predetermined voltage until the battery voltage decays to very nearly the predetermined voltage. A field effect transistor between the base of the bipolar transistor and a junction between the zener diode and resistor regulates base current of the bipolar transistor, thereby regulating the conductivity of the bipolar transistor for control of the output voltage.

  2. Basic matrix algebra and transistor circuits

    CERN Document Server

    Zelinger, G

    1963-01-01

    Basic Matrix Algebra and Transistor Circuits deals with mastering the techniques of matrix algebra for application in transistors. This book attempts to unify fundamental subjects, such as matrix algebra, four-terminal network theory, transistor equivalent circuits, and pertinent design matters. Part I of this book focuses on basic matrix algebra of four-terminal networks, with descriptions of the different systems of matrices. This part also discusses both simple and complex network configurations and their associated transmission. This discussion is followed by the alternative methods of de

  3. Wide-bandwidth charge sensitivity with a radio-frequency field-effect transistor

    NARCIS (Netherlands)

    Nishiguchi, K.; Yamaguchi, H.; Fujiwara, A.; Van der Zant, H.S.J.; Steele, G.A.

    2013-01-01

    We demonstrate high-speed charge detection at room temperature with single-electron resolution by using a radio-frequency field-effect transistor (RF-FET). The RF-FET combines a nanometer-scale silicon FET with an impedance-matching circuit composed of an inductor and capacitor. Driving the RF-FET

  4. Probing spin-polarized tunneling at high bias and temperature with a magnetic tunnel transistor

    NARCIS (Netherlands)

    Park, B.G.; Banerjee, T.; Min, B.C.; Sanderink, Johannes G.M.; Lodder, J.C.; Jansen, R.

    2005-01-01

    The magnetic tunnel transistor (MTT) is a three terminal hybrid device that consists of a tunnel emitter, a ferromagnetic (FM) base, and a semiconductor collector. In the MTT with a FM emitter and a single FM base, spin-polarized hot electrons are injected into the base by tunneling. After

  5. Air-Stable Complementary-like Circuits Based on Organic ; Ambipolar Transistors

    NARCIS (Netherlands)

    Anthopoulos, T.D.; Setayesh, S.; Smits, E.; Cölle, M; Cantatore, E.; Boer, B. de; Blom, P.W.M.; Leeuw, D.M. de

    2005-01-01

    To date there are two demonstrated technologies for the fabrication of organic integrated circuits: the unipolar and the complementary technology. Unipolar architectures consist of p-channel organic field-effect transistors (OFETs), which are simple to fabricate since they require a single,

  6. Graphene electrodes for n-type organic field-effect transistors

    DEFF Research Database (Denmark)

    Henrichsen, Henrik Hartmann; Boggild, P.

    2010-01-01

    field-effect transistor configuration (OFET). Single tip tungsten as well as microscale multi-point probes were used to electrically contact individual devices, making permanent connections unnecessary. The device platform has been tested with a thin film of para-hexaphenylene (p6P...

  7. Charge collection mechanisms in MOS/SOI transistors irradiated by energetic heavy ions

    International Nuclear Information System (INIS)

    Musseau, O.; Leray, J.L.; Ferlet, V.; Umbert, A.; Coic, Y.M.; Hesto, P.

    1991-01-01

    We have investigated with both experimental and numerical methods (Monte Carlo and drift-diffusion models) various charge collection mechanisms in NMOS/SOI transistors irradiated by single energetic heavy ions. Our physical interpretations of data emphasize the influence of various parasitic structures of the device. Two charge collection mechanisms are detailed: substrate funneling in buried MOS capacitor and latching of the parasitic bipolar transistor. Based on carrier transport and charge collection, the sensitivity of future scaled down CMOS/SOI technologies is finally discussed

  8. Effect of the metal work function on the electrical properties of carbon nanotube network transistors

    International Nuclear Information System (INIS)

    Kim, Un Jeong; Ko, Dae Young; Kil, Joon Pyo; Lee, Jung Wha; Park, Wan Jun

    2012-01-01

    A nearly perfect semiconducting single-walled carbon nanotube random network thin film transistor array was fabricated, and its reproducible transport properties were investigated. The effects of the metal work function for both the source and the drain on the electrical properties of the transistors were systematically investigated. Three different metal electrodes, Al, Ti, and Pd, were employed. As the metal work function increased, p-type behavior became dominant, and the field effect hole mobility dramatically increased. Also, the Schottky barrier of the Ti-nanotube contact was invariant to the molecular adsorption of species in air.

  9. Lateral power transistors in integrated circuits

    CERN Document Server

    Erlbacher, Tobias

    2014-01-01

    This book details and compares recent advancements in the development of novel lateral power transistors (LDMOS devices) for integrated circuits in power electronic applications. It includes the state-of-the-art concept of double-acting RESURF topologies.

  10. Graphene Field Effect Transistors for Radiation Detection

    Data.gov (United States)

    National Aeronautics and Space Administration — This is propose to develop Graphene Field Effect Transistor based Radiation Sensors (GFET-RS) for NASA Manned Spaceflight Missions anticipated in next several...

  11. Modeling of strain effects on the device behaviors of ferroelectric memory field-effect transistors

    International Nuclear Information System (INIS)

    Yang, Feng; Hu, Guangda; Wu, Weibing; Yang, Changhong; Wu, Haitao; Tang, Minghua

    2013-01-01

    The influence of strains on the channel current–gate voltage behaviors and memory windows of ferroelectric memory field-effect transistors (FeMFETs) were studied using an improved model based on the Landau–Devonshire theory. ‘Channel potential–gate voltage’ ferroelectric polarization and silicon surface potential diagrams were constructed for strained single-domain BaTiO 3 FeMFETs. The compressive strains can increase (or decrease) the amplitude of transistor currents and enlarge memory windows. However, tensile strains only decrease the maximum value of transistor currents and compress memory windows. Mismatch strains were found to have a significant influence on the electrical behaviors of the devices, therefore, they must be considered in FeMFET device designing. (fast track communication)

  12. Exploring graphene field effect transistor devices to improve spectral resolution of semiconductor radiation detectors

    Energy Technology Data Exchange (ETDEWEB)

    Harrison, Richard Karl [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Howell, Stephen Wayne [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Martin, Jeffrey B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States); Hamilton, Allister B. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2013-12-01

    Graphene, a planar, atomically thin form of carbon, has unique electrical and material properties that could enable new high performance semiconductor devices. Graphene could be of specific interest in the development of room-temperature, high-resolution semiconductor radiation spectrometers. Incorporating graphene into a field-effect transistor architecture could provide an extremely high sensitivity readout mechanism for sensing charge carriers in a semiconductor detector, thus enabling the fabrication of a sensitive radiation sensor. In addition, the field effect transistor architecture allows us to sense only a single charge carrier type, such as electrons. This is an advantage for room-temperature semiconductor radiation detectors, which often suffer from significant hole trapping. Here we report on initial efforts towards device fabrication and proof-of-concept testing. This work investigates the use of graphene transferred onto silicon and silicon carbide, and the response of these fabricated graphene field effect transistor devices to stimuli such as light and alpha radiation.

  13. Individual SnO{sub 2} nanowire transistors fabricated by the gold microwire mask method

    Energy Technology Data Exchange (ETDEWEB)

    Sun Jia; Tang Qingxin; Lu Aixia; Jiang Xuejiao; Wan Qing [Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education, and State Key Laboratory of Chemo/Biosensing and Chemometrics, Hunan University, Changsha, 410082 (China)], E-mail: wanqing7686@hotmail.com

    2009-06-24

    A gold microwire mask method is developed for the fabrication of transistors based on single lightly Sb-doped SnO{sub 2} nanowires. Damage of the nanowire's surface can be avoided without any thermal annealing and surface modification, which is very convenient for the fundamental electrical and photoelectric characterization of one-dimensional inorganic nanomaterials. Transport measurements of the individual SnO{sub 2} nanowire devices demonstrate the high-performance n-type field effect transistor characteristics without significant hysteresis in the transfer curves. The current on/off ratio and the subthreshold swing of the nanowire transistors are found to be 10{sup 6} and 240 mV/decade, respectively.

  14. Self-consistent depth profiling and imaging of GaN-based transistors using ion microbeams

    Energy Technology Data Exchange (ETDEWEB)

    Redondo-Cubero, A., E-mail: andres.redondo@uam.es [IPFN, Instituto Superior Técnico, Campus Tecnológico e Nuclear, Universidade de Lisboa, 2686-953 Bobadela (Portugal); Departamento de Física Aplicada y Centro de Micro-Análisis de Materiales, Universidad Autónoma de Madrid, 28049 Madrid (Spain); Corregidor, V. [IPFN, Instituto Superior Técnico, Campus Tecnológico e Nuclear, Universidade de Lisboa, 2686-953 Bobadela (Portugal); Vázquez, L. [Instituto de Ciencia de Materiales de Madrid, Consejo Superior de Investigaciones Científicas, 28049 Madrid (Spain); Alves, L.C. [C2TN, Instituto Superior Técnico, Campus Tecnológico e Nuclear, Universidade de Lisboa, 2686-953 Bobadela (Portugal)

    2015-04-01

    Using an ion microprobe, a comprehensive lateral and in-depth characterization of a single GaN-based high electron mobility transistor is carried out by means of Rutherford backscattering spectrometry (RBS) in combination with particle induced X-ray emission (PIXE). Elemental distribution was obtained for every individual section of the device (wafer, gate and source contact), identifying the basic constituents of the transistor (including the detection of the passivant layer) and checking its homogeneity. A self-consistent analysis of each individual regions of the transistor was carried out with a simultaneous fit of RBS and PIXE spectra with two different beam conditions. Following this approach, the quantification of the atomic content and the layer thicknesses was successfully achieved overcoming the mass-depth ambiguity of certain elements.

  15. Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Bongjun; Liang, Kelly; Dodabalapur, Ananth, E-mail: ananth.dodabalapur@engr.utexas.edu [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); Geier, Michael L.; Hersam, Mark C. [Department of Materials Science and Engineering and Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States)

    2016-07-11

    We show that double-gate ambipolar thin-film transistors can be operated to enhance minority carrier injection. The two gate potentials need to be significantly different for enhanced injection to be observed. This enhancement is highly beneficial in devices such as light-emitting transistors where balanced electron and hole injections lead to optimal performance. With ambipolar single-walled carbon nanotube semiconductors, we demonstrate that higher ambipolar currents are attained at lower source-drain voltages, which is desired for portable electronic applications, by employing double-gate structures. In addition, when the two gates are held at the same potential, the expected advantages of the double-gate transistors such as enhanced on-current are also observed.

  16. Breakdown of transistors in Marx bank circuit

    Science.gov (United States)

    Chatterjee, Amitabh

    2000-09-01

    We reconsider the mode of operation of a Marx bank circuit and analyze the secondary breakdown of transistors with shorted emitter-base. The mechanism of breakdown of the transistor when a fast rising voltage pulse is applied across is investigated. The device exhibits chaotic behavior at the breakdown point where it can go into two possible modes of breakdown. A new explanation for the working of the circuit consistent with the experimental observations is proposed.

  17. Bipolar transistor in VESTIC technology: prototype

    Science.gov (United States)

    Mierzwiński, Piotr; Kuźmicz, Wiesław; Domański, Krzysztof; Tomaszewski, Daniel; Głuszko, Grzegorz

    2016-12-01

    VESTIC technology is an alternative for traditional CMOS technology. This paper presents first measurement data of prototypes of VES-BJT: bipolar transistors in VESTIC technology. The VES-BJT is a bipolar transistor on the SOI substrate with symmetric lateral structure and both emitter and collector made of polysilicon. The results indicate that VES-BJT can be a device with useful characteristics. Therefore, VESTIC technology has the potential to become a new BiCMOS-type technology with some unique properties.

  18. Learning style preferences of medical students: a single-institute experience from Saudi Arabia

    OpenAIRE

    Ayesha Nuzhat; Raneem O. Salem; Mohammed S.A. Quadri; Nasir Al-Hamdan

    2011-01-01

    Objectives: The purpose of this study was to examine preferred learning styles of undergraduate medical students at King Saud Bin Abdul Aziz University for Health Sciences, King Fahad Medical College, Saudi Arabia. Methods: A cross sectional study of preclinical students with 74 male and 72 female (n= 146) was performed. The validated VARK questionnaire was used to categorize the learning styles of students. The questionnaire consists of 16 items which identify four different learning styles:...

  19. Motor learning of novel dynamics is not represented in a single global coordinate system: evaluation of mixed coordinate representations and local learning.

    Science.gov (United States)

    Berniker, Max; Franklin, David W; Flanagan, J Randall; Wolpert, Daniel M; Kording, Konrad

    2014-03-01

    Successful motor performance requires the ability to adapt motor commands to task dynamics. A central question in movement neuroscience is how these dynamics are represented. Although it is widely assumed that dynamics (e.g., force fields) are represented in intrinsic, joint-based coordinates (Shadmehr R, Mussa-Ivaldi FA. J Neurosci 14: 3208-3224, 1994), recent evidence has questioned this proposal. Here we reexamine the representation of dynamics in two experiments. By testing generalization following changes in shoulder, elbow, or wrist configurations, the first experiment tested for extrinsic, intrinsic, or object-centered representations. No single coordinate frame accounted for the pattern of generalization. Rather, generalization patterns were better accounted for by a mixture of representations or by models that assumed local learning and graded, decaying generalization. A second experiment, in which we replicated the design of an influential study that had suggested encoding in intrinsic coordinates (Shadmehr and Mussa-Ivaldi 1994), yielded similar results. That is, we could not find evidence that dynamics are represented in a single coordinate system. Taken together, our experiments suggest that internal models do not employ a single coordinate system when generalizing and may well be represented as a mixture of coordinate systems, as a single system with local learning, or both.

  20. Simulation of 50-nm Gate Graphene Nanoribbon Transistors

    Directory of Open Access Journals (Sweden)

    Cedric Nanmeni Bondja

    2016-01-01

    Full Text Available An approach to simulate the steady-state and small-signal behavior of GNR MOSFETs (graphene nanoribbon metal-semiconductor-oxide field-effect transistor is presented. GNR material parameters and a method to account for the density of states of one-dimensional systems like GNRs are implemented in a commercial device simulator. This modified tool is used to calculate the current-voltage characteristics as well the cutoff frequency fT and the maximum frequency of oscillation fmax of GNR MOSFETs. Exemplarily, we consider 50-nm gate GNR MOSFETs with N = 7 armchair GNR channels and examine two transistor configurations. The first configuration is a simplified MOSFET structure with a single GNR channel as usually studied by other groups. Furthermore, and for the first time in the literature, we study in detail a transistor structure with multiple parallel GNR channels and interribbon gates. It is shown that the calculated fT of GNR MOSFETs is significantly lower than that of GFETs (FET with gapless large-area graphene channel with comparable gate length due to the mobility degradation in GNRs. On the other hand, GNR MOSFETs show much higher fmax compared to experimental GFETs due the semiconducting nature of the GNR channels and the resulting better saturation of the drain current. Finally, it is shown that the gate control in FETs with multiple parallel GNR channels is improved while the cutoff frequency is degraded compared to single-channel GNR MOSFETs due to parasitic capacitances of the interribbon gates.

  1. Service learning can make occupation-based practice a reality: a single case study.

    Science.gov (United States)

    Vroman, Kerryellen; Simmons, C Douglas; Knight, Jessica

    2010-07-01

    ABSTRACT Service learning is philosophically congruent with the objectives of progressive occupational therapy curricula. This article presents a case-based research study that examined the attributes and outcomes of a service-learning course that included Level I fieldwork. Analysis of the case study identified three themes: (a) the translation of theory to practice, (b) the value of contextual learning, and (c) the gestalt of occupational awareness. Service learning can be considered a pedagogical [2] model that promotes the synthesis of conceptual models to clinical practice. Furthermore, it enables students to develop a professional and personal philosophy of occupation earlier in their careers.

  2. Temas de Física para Ingeniería: El transistor de unión

    OpenAIRE

    Beléndez Vázquez, Augusto; Pastor Antón, Carlos; Martín García, Agapito

    1990-01-01

    El transistor de unión bipolar. Tensiones y corrientes en el transistor. El transistor como amplificador. El transistor como conmutador. Transistores unipolares o de efecto de campo. El tiristor. Microelectrónica y circuitos integrados.

  3. Unjuk Kerja Catu Daya 12 Volt 2a Dengan Pass Element Transistor Npn Dan Pnp

    OpenAIRE

    Fathoni, Fathoni

    2010-01-01

    Transistor pelewat (pass element transistor) yang dipasang pada rangkain catu daya yang menggunakan IC regulator 3 terminal adalah untuk booster arus output. Ada dua cara pemasangan transistor pelewat yang umum digunakan, yaitu dengan transistor pnp dan npn. Transistor pnp dipasang dengan basis transistor yang terhubung pada input IC regulator sedangkan transistor npn dipasang dengan basis transistor yang terhubung pada output IC regulator.Untuk mengetahui unjuk kerja dari kedua ...

  4. Enhancing Problem-Based Learning Designs with a Single E-Learning Scaffolding Tool: Two Case Studies Using Challenge FRAP

    Science.gov (United States)

    Stewart, Terry M.; MacIntyre, William R.; Galea, Victor J.; Steel, Caroline H.

    2007-01-01

    Problem-based learning (PBL) is a powerful instructional approach. By working through assessable complex problem-solving tasks learners can be encouraged to actively engage in investigation and inquiry and to use high level cognitive thought processes to solve real-life problems in professional contexts. A critical element of a successful PBL…

  5. Development of solution-gated graphene transistor model for biosensors

    Science.gov (United States)

    Karimi, Hediyeh; Yusof, Rubiyah; Rahmani, Rasoul; Hosseinpour, Hoda; Ahmadi, Mohammad T.

    2014-02-01

    The distinctive properties of graphene, characterized by its high carrier mobility and biocompatibility, have stimulated extreme scientific interest as a promising nanomaterial for future nanoelectronic applications. In particular, graphene-based transistors have been developed rapidly and are considered as an option for DNA sensing applications. Recent findings in the field of DNA biosensors have led to a renewed interest in the identification of genetic risk factors associated with complex human diseases for diagnosis of cancers or hereditary diseases. In this paper, an analytical model of graphene-based solution gated field effect transistors (SGFET) is proposed to constitute an important step towards development of DNA biosensors with high sensitivity and selectivity. Inspired by this fact, a novel strategy for a DNA sensor model with capability of single-nucleotide polymorphism detection is proposed and extensively explained. First of all, graphene-based DNA sensor model is optimized using particle swarm optimization algorithm. Based on the sensing mechanism of DNA sensors, detective parameters ( I ds and V gmin) are suggested to facilitate the decision making process. Finally, the behaviour of graphene-based SGFET is predicted in the presence of single-nucleotide polymorphism with an accuracy of more than 98% which guarantees the reliability of the optimized model for any application of the graphene-based DNA sensor. It is expected to achieve the rapid, quick and economical detection of DNA hybridization which could speed up the realization of the next generation of the homecare sensor system.

  6. Ionic PN and PNP junctions -- Diodes and Transistors

    Science.gov (United States)

    Kalman, Eric; Vlassiouk, Ivan; Apel, Pavel; Siwy, Zuzanna

    2008-03-01

    There are well-known devices for controlling the transport of electrons, but very few control ions in a solution. We have prepared ionic diodes and transistors that function in a similar manner to their semiconductor analogues. Ionic PN junctions were created by surface patterning single conical nanopores in polymer films, so that the pore walls are split into two sections: one with positive charge, and the other with negative. These diodes can achieve rectification degrees of several hundreds. Ionic PNP junctions were created by surface patterning single double-conical nanopores in polymer films with tip diameter between 2 and 6 nm, so that the pore walls are split into three sections: the two areas near the large pore openings which are positively charged, while the center of the pore, near the pore tip, is negatively charged. This device works in a similar fashion to a semiconducting BJT transistor, and we show that we can control the electric potential chemically in a manner sufficient to gate the ion current through the device.

  7. Knowledge Representation of Ion-Sensitive Field-Effect Transistor Voltage Response for Potassium Ion Concentration Detection in Mixed Potassium/Ammonium Ion Solutions

    OpenAIRE

    Wan F.H. Abdullah; Masuri Othman; Mohd A.M. Ali; Md S. Islam

    2010-01-01

    Problem statement: The Ion-Sensitive Field-Effect Transistor (ISFET) is a metal-oxide field-effect transistor-based sensor that reacts to ionic activity at the electrolye/membrane/gate interface. The ionic sensor faces issue of selectivity from interfering ions that contribute to the sensor electrical response in mixed solutions. Approach: We present the training data collection of ISFET voltage response for the purpose of post-processing stage neural network supervised learning. The role of ...

  8. Jig protects transistors from heat while tinning leads

    Science.gov (United States)

    Pelletier, A. J.; Willis, G. A.

    1966-01-01

    In tinning transistor leads, an aluminum jig is used to dip the leads into the molten tin. The jigs mass shunts excess heat given off by the molten tin before it reaches and damages the transistor body.

  9. Ambipolar phosphorene field effect transistor.

    Science.gov (United States)

    Das, Saptarshi; Demarteau, Marcel; Roelofs, Andreas

    2014-11-25

    In this article, we demonstrate enhanced electron and hole transport in few-layer phosphorene field effect transistors (FETs) using titanium as the source/drain contact electrode and 20 nm SiO2 as the back gate dielectric. The field effect mobility values were extracted to be ∼38 cm(2)/Vs for electrons and ∼172 cm(2)/Vs for the holes. On the basis of our experimental data, we also comprehensively discuss how the contact resistances arising due to the Schottky barriers at the source and the drain end effect the different regime of the device characteristics and ultimately limit the ON state performance. We also propose and implement a novel technique for extracting the transport gap as well as the Schottky barrier height at the metal-phosphorene contact interface from the ambipolar transfer characteristics of the phosphorene FETs. This robust technique is applicable to any ultrathin body semiconductor which demonstrates symmetric ambipolar conduction. Finally, we demonstrate a high gain, high noise margin, chemical doping free, and fully complementary logic inverter based on ambipolar phosphorene FETs.

  10. Organic tunnel field effect transistors

    KAUST Repository

    Tietze, Max Lutz

    2017-06-29

    Various examples are provided for organic tunnel field effect transistors (OTFET), and methods thereof. In one example, an OTFET includes a first intrinsic layer (i-layer) of organic semiconductor material disposed over a gate insulating layer; source (or drain) contact stacks disposed on portions of the first i-layer; a second i-layer of organic semiconductor material disposed on the first i-layer surrounding the source (or drain) contact stacks; an n-doped organic semiconductor layer disposed on the second i-layer; and a drain (or source) contact layer disposed on the n-doped organic semiconductor layer. The source (or drain) contact stacks can include a p-doped injection layer, a source (or drain) contact layer, and a contact insulating layer. In another example, a method includes disposing a first i-layer over a gate insulating layer; forming source or drain contact stacks; and disposing a second i-layer, an n-doped organic semiconductor layer, and a drain or source contact.

  11. Ambipolar Phosphorene Field Effect Transistor

    Energy Technology Data Exchange (ETDEWEB)

    Das, Saptarshi [Center for Nanoscale Material and ‡Division of High Energy Physics, Argonne National Laboratory, Argonne, Illinois 60439, United States; Demarteau, Marcel [Center for Nanoscale Material and ‡Division of High Energy Physics, Argonne National Laboratory, Argonne, Illinois 60439, United States; Roelofs, Andreas [Center for Nanoscale Material and ‡Division of High Energy Physics, Argonne National Laboratory, Argonne, Illinois 60439, United States

    2014-10-23

    Two dimensional materials provide an intriguing platform to investigate rich physical phenomena which could ultimately lead to the development of innovative nanotechnologies (1-17). Semiconducting black phosphorous (BP) with high carrier mobility (18-20), anisotropic transport (21, 22) and tunable bandgap (23, 24) is the most recent addition to this exotic class of two dimensional materials. In this article we experimentally demonstrate room temperature quasi ballistic transport of both holes and electrons in ionic liquid gated black phosphorous (BP) field effect transistors (FET) with sub-100nm channel length. The carrier mean free path (mfp) was found to be 15nm for the holes and 5nm for the electrons. By improving the carrier injection through superior electrostatic gate control (EOT=1.5nm), highly symmetric ambipolar conduction with record high hole current of ~0.78mA/µm and electron current of ~0.68mA/µm are achieved for VDD=0.2V. The extracted record low contact resistance of 220Ω-µm is similar to the state of the art Si technology. This is also the best contact resistance value achieved for any two dimensional metal-semiconductor interfaces. Finally, we provide an analytical framework to compare the experimental results with ballistic simulations which includes quantum capacitance considerations.

  12. INTELLIGENT FRACTIONAL ORDER ITERATIVE LEARNING CONTROL USING FEEDBACK LINEARIZATION FOR A SINGLE-LINK ROBOT

    Directory of Open Access Journals (Sweden)

    Iman Ghasemi

    2017-05-01

    Full Text Available In this paper, iterative learning control (ILC is combined with an optimal fractional order derivative (BBO-Da-type ILC and optimal fractional and proportional-derivative (BBO-PDa-type ILC. In the update law of Arimoto's derivative iterative learning control, a first order derivative of tracking error signal is used. In the proposed method, fractional order derivative of the error signal is stated in term of 'sa' where  to update iterative learning control law. Two types of fractional order iterative learning control namely PDa-type ILC and Da-type ILC are gained for different value of a. In order to improve the performance of closed-loop control system, coefficients of both  and  learning law i.e. proportional , derivative  and  are optimized using Biogeography-Based optimization algorithm (BBO. Outcome of the simulation results are compared with those of the conventional fractional order iterative learning control to verify effectiveness of BBO-Da-type ILC and BBO-PDa-type ILC

  13. A single early life seizure impairs short-term memory but does not alter spatial learning, recognition memory, or anxiety

    Science.gov (United States)

    Cornejo, Brandon J.; Mesches, Michael H.; Benke, Timothy A.

    2008-01-01

    The impact of a single seizure on cognition remains controversial. We hypothesized that a single early life seizure (sELS) on rat post-natal day (P) 7 would alter only hippocampal-dependent learning and memory in mature (P60) rats. The Morris Water Maze (MWM), Novel Object and Novel Place Recognition (NOR/NPR) tasks, and Contextual Fear Conditioning (CFC) were used to assess learning and memory associated with hippocampal/prefrontal cortex, perirhinal/hippocampal cortex, and amygdala function, respectively. The Elevated Plus Maze (EPM) and Open Field Test (OFT) were used to assess anxiety associated with the septum. We report that sELS impaired hippocampal-dependent short-term memory but not spatial learning or recall. sELS did not disrupt performance in the NOR/NPR. CFC performance suggested intact amydgala function. sELS did not change anxiety levels as measured by the EPM or OFT. Our data suggests that the long-term cognitive impacts of sELS are largely limited to the hippocampus/prefrontal cortex. PMID:18678283

  14. The effect of the fragmentation problem in decision tree learning applied to the search for single top quark production

    International Nuclear Information System (INIS)

    Vilalta, R; Ocegueda-Hernandez, F; Valerio, R; Watts, G

    2010-01-01

    Decision tree learning constitutes a suitable approach to classification due to its ability to partition the variable space into regions of class-uniform events, while providing a structure amenable to interpretation, in contrast to other methods such as neural networks. But an inherent limitation of decision tree learning is the progressive lessening of the statistical support of the final classifier as clusters of single-class events are split on every partition, a problem known as the fragmentation problem. We describe a software system called DTFE, for Decision Tree Fragmentation Evaluator, that measures the degree of fragmentation caused by a decision tree learner on every event cluster. Clusters are found through a decomposition of the data using a technique known as Spectral Clustering. Each cluster is analyzed in terms of the number and type of partitions induced by the decision tree. Our domain of application lies on the search for single top quark production, a challenging problem due to large and similar backgrounds, low energetic signals, and low number of jets. The output of the machine-learning software tool consists of a series of statistics describing the degree of data fragmentation.

  15. Hafnium transistor design for neural interfacing.

    Science.gov (United States)

    Parent, David W; Basham, Eric J

    2008-01-01

    A design methodology is presented that uses the EKV model and the g(m)/I(D) biasing technique to design hafnium oxide field effect transistors that are suitable for neural recording circuitry. The DC gain of a common source amplifier is correlated to the structural properties of a Field Effect Transistor (FET) and a Metal Insulator Semiconductor (MIS) capacitor. This approach allows a transistor designer to use a design flow that starts with simple and intuitive 1-D equations for gain that can be verified in 1-D MIS capacitor TCAD simulations, before final TCAD process verification of transistor properties. The DC gain of a common source amplifier is optimized by using fast 1-D simulations and using slower, complex 2-D simulations only for verification. The 1-D equations are used to show that the increased dielectric constant of hafnium oxide allows a higher DC gain for a given oxide thickness. An additional benefit is that the MIS capacitor can be employed to test additional performance parameters important to an open gate transistor such as dielectric stability and ionic penetration.

  16. Polyphosphonium-based ion bipolar junction transistors.

    Science.gov (United States)

    Gabrielsson, Erik O; Tybrandt, Klas; Berggren, Magnus

    2014-11-01

    Advancements in the field of electronics during the past few decades have inspired the use of transistors in a diversity of research fields, including biology and medicine. However, signals in living organisms are not only carried by electrons but also through fluxes of ions and biomolecules. Thus, in order to implement the transistor functionality to control biological signals, devices that can modulate currents of ions and biomolecules, i.e., ionic transistors and diodes, are needed. One successful approach for modulation of ionic currents is to use oppositely charged ion-selective membranes to form so called ion bipolar junction transistors (IBJTs). Unfortunately, overall IBJT device performance has been hindered due to the typical low mobility of ions, large geometries of the ion bipolar junction materials, and the possibility of electric field enhanced (EFE) water dissociation in the junction. Here, we introduce a novel polyphosphonium-based anion-selective material into npn-type IBJTs. The new material does not show EFE water dissociation and therefore allows for a reduction of junction length down to 2 μm, which significantly improves the switching performance of the ion transistor to 2 s. The presented improvement in speed as well the simplified design will be useful for future development of advanced iontronic circuits employing IBJTs, for example, addressable drug-delivery devices.

  17. Two transistor cluster DICE Cells with the minimum area for a hardened 28-nm CMOS and 65-nm SRAM layout design

    International Nuclear Information System (INIS)

    Stenin, V.Ya.; Stepanov, P.V.

    2015-01-01

    A hardened DICE cell layout design is based on the two spaced transistor clusters of the DICE cell each consisting of four transistors. The larger the distance between these two CMOS transistor clusters, the more robust the hardened DICE SRAM to Single Event Upsets. Some versions of the 28-nm and 65-nm DICE CMOS SRAM block composition have been suggested with minimum cluster distances of 2.27-2.32 mkm. The area of hardened 28-nm DICE CMOS cells is larger than the area of 28-nm 6T CMOS cells by a factor of 2.1 [ru

  18. The Impact of E-Learning on Adherence to Guidelines for Acute Gastroenteritis: A Single-Arm Intervention Study

    Science.gov (United States)

    Nicastro, Emanuele; Lo Vecchio, Andrea; Liguoro, Ilaria; Chmielewska, Anna; De Bruyn, Caroline; Dolinsek, Jernej; Doroshina, Elena; Fessatou, Smaragdi; Pop, Tudor Lucian; Prell, Christine; Tabbers, Merit Monique; Tavares, Marta; Urenden-Elicin, Pinar; Bruzzese, Dario; Zakharova, Irina; Sandhu, Bhupinder; Guarino, Alfredo

    2015-01-01

    Objective E-learning is a candidate tool for clinical practice guidelines (CPG) implementation due to its versatility, universal access and low costs. We aimed to assess the impact of a five-module e-learning course about CPG for acute gastroenteritis (AGE) on physicians’ knowledge and clinical practice. Study design This work was conceived as a pre/post single-arm intervention study. Physicians from 11 European countries registered for the online course. Personal data, pre- and post-course questionnaires and clinical data about 3 to 5 children with AGE managed by each physician before and after the course were collected. Primary outcome measures included the proportion of participants fully adherent to CPG and number of patients managed with full adherence. Results Among the 149 physicians who signed up for the e-learning course, 59 took the course and reported on their case management of 519 children E-learning is effective in increasing knowledge and improving clinical practice in paediatric AGE and is an effective tool for implementing clinical practice guidelines. PMID:26148301

  19. Discrete transistor measuring and matching using a solid core oven.

    Science.gov (United States)

    Inkinen, M; Mäkelä, K; Vuorela, T; Palovuori, K

    2013-03-01

    This paper presents transistor measurements done at a constant temperature. The aim in this research was to develop a reliable and repeatable method for measuring and searching transistor pairs with similar parameters, as in certain applications it is advantageous to use transistors from the same production batch due to the significant variability in batches from different manufacturers. Transistor manufacturing methods are well established, but due to the large variability in tolerance, not even transistors from the same manufacturing batch have identical properties. Transistors' electrical properties are also strongly temperature-dependent. Therefore, when measuring transistor properties, the temperature must be kept constant. For the measurement process, a solid-core oven providing stable temperature was implemented. In the oven, the base-to-emitter voltage (VBE) and DC-current gain (β) of 32 transistors could be measured simultaneously. The oven's temperature was controlled with a programmable thermostat, which allowed accurate constant temperature operation. The oven is formed by a large metal block with an individual chamber for each transistor to be measured. Isolation of individual transistors and the highly thermally conductive metal core structure prevent thermal coupling between transistors. The oven enables repeatable measurements, and thus measurements between different batches are comparable. In this research study, the properties of over 5000 transistors were measured and the variance of the aforementioned properties was analyzed.

  20. Bipolar-FET combinational power transistors for power conversion applications

    Science.gov (United States)

    Chen, D. Y.; Chin, S. A.

    1984-01-01

    Four bipolar-FET (field-effect transistor) combinational transistor configurations are compared from the application point of view. The configurations included are FET-Darlington (cascade), emitter-open switch (cascode), parallel configuration, and FET-gated bipolar transistors (FGT).

  1. Stretchable transistors with buckled carbon nanotube films as conducting channels

    Science.gov (United States)

    Arnold, Michael S; Xu, Feng

    2015-03-24

    Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains.

  2. The boost transistor: a field plate controlled LDMOST

    NARCIS (Netherlands)

    Ferrara, A.; Schmitz, Jurriaan; Boksteen, B.K.; Hueting, Raymond Josephus Engelbart; Steeneken, P.G.; Heringa, A.; Claes, J.; van der Wel, A.P.

    2015-01-01

    In this work we present a new device: the boost transistor. The boost transistor is an LDMOS transistor that is controlled by a separate field plate boost electrode that reduces the specific on-resistance RonA. By applying a positive voltage Vboost, this electrode creates an accumulation layer in

  3. Slowing DNA Translocation in a Nanofluidic Field-Effect Transistor.

    Science.gov (United States)

    Liu, Yifan; Yobas, Levent

    2016-04-26

    Here, we present an experimental demonstration of slowing DNA translocation across a nanochannel by modulating the channel surface charge through an externally applied gate bias. The experiments were performed on a nanofluidic field-effect transistor, which is a monolithic integrated platform featuring a 50 nm-diameter in-plane alumina nanocapillary whose entire length is surrounded by a gate electrode. The field-effect transistor behavior was validated on the gating of ionic conductance and protein transport. The gating of DNA translocation was subsequently studied by measuring discrete current dips associated with single λ-DNA translocation events under a source-to-drain bias of 1 V. The translocation speeds under various gate bias conditions were extracted by fitting event histograms of the measured translocation time to the first passage time distributions obtained from a simple 1D biased diffusion model. A positive gate bias was observed to slow the translocation of single λ-DNA chains markedly; the translocation speed was reduced by an order of magnitude from 18.4 mm/s obtained under a floating gate down to 1.33 mm/s under a positive gate bias of 9 V. Therefore, a dynamic and flexible regulation of the DNA translocation speed, which is vital for single-molecule sequencing, can be achieved on this device by simply tuning the gate bias. The device is realized in a conventional semiconductor microfabrication process without the requirement of advanced lithography, and can be potentially further developed into a compact electronic single-molecule sequencer.

  4. Molecular thermal transistor: Dimension analysis and mechanism

    Science.gov (United States)

    Behnia, S.; Panahinia, R.

    2018-04-01

    Recently, large challenge has been spent to realize high efficient thermal transistors. Outstanding properties of DNA make it as an excellent nano material in future technologies. In this paper, we introduced a high efficient DNA based thermal transistor. The thermal transistor operates when the system shows an increase in the thermal flux despite of decreasing temperature gradient. This is what called as negative differential thermal resistance (NDTR). Based on multifractal analysis, we could distinguish regions with NDTR state from non-NDTR state. Moreover, Based on dimension spectrum of the system, it is detected that NDTR state is accompanied by ballistic transport regime. The generalized correlation sum (analogous to specific heat) shows that an irregular decrease in the specific heat induces an increase in the mean free path (mfp) of phonons. This leads to the occurrence of NDTR.

  5. Fundamentals of nanoscaled field effect transistors

    CERN Document Server

    Chaudhry, Amit

    2013-01-01

    Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book. In summary, this book: Covers the fundamental principles behind nanoelectronics/microelectronics Includes chapters devoted to solutions tackling the quantum mechanical effects occurring at nanoscale Provides some case studies to understand the issue mathematically Fundamentals of Nanoscaled Field Effect Transistors is an ideal book for researchers and undergraduate and graduate students in the field of microelectronics, nanoelectronics, and electronics.

  6. Transistor Small Signal Analysis under Radiation Effects

    International Nuclear Information System (INIS)

    Sharshar, K.A.A.

    2004-01-01

    A Small signal transistor parameters dedicate the operation of bipolar transistor before and after exposed to gamma radiation (1 Mrad up to 5 Mrads) and electron beam(1 MeV, 25 mA) with the same doses as a radiation sources, the electrical parameters of the device are changed. The circuit Model has been discussed.Parameters, such as internal emitter resistance (re), internal base resistance, internal collector resistance (re), emitter base photocurrent (Ippe) and base collector photocurrent (Ippe). These parameters affect on the operation of the device in its applications, which work as an effective element, such as current gain (hFE≡β)degradation it's and effective parameter in the device operation. Also the leakage currents (IcBO) and (IEBO) are most important parameters, Which increased with radiation doses. Theoretical representation of the change in the equivalent circuit for NPN and PNP bipolar transistor were discussed, the input and output parameters of the two types were discussed due to the change in small signal input resistance of the two types. The emitter resistance(re) were changed by the effect of gamma and electron beam irradiation, which makes a change in the role of matching impedances between transistor stages. Also the transistor stability factors S(Ico), S(VBE) and S(β are detected to indicate the transistor operations after exposed to radiation fields. In low doses the gain stability is modified due to recombination of induced charge generated during device fabrication. Also the load resistance values are connected to compensate the effect

  7. Lateral and Vertical Organic Transistors

    Science.gov (United States)

    Al-Shadeedi, Akram

    An extensive study has been performed to provide a better understanding of the operation principles of doped organic field-effect transistors (OFETs), organic p-i-n diodes, Schottky diodes, and organic permeable base transistors (OPBTs). This has been accomplished by a combination of electrical and structural characterization of these devices. The discussion of doped OFETs focuses on the shift of the threshold voltage due to increased doping concentrations and the generation and transport of minority charge carriers. Doping of pentacene OFETs is achieved by co-evaporation of pentacene with the n-dopant W2(hpp)4. It is found that pentacene thin film are efficiently doped and that a conductivity in the range of 2.6 x 10-6 S cm-1 for 1 wt% to 2.5 x 10-4 S cm-1 for 16 wt% is reached. It is shown that n-doped OFET consisting of an n-doped channel and n-doped contacts are ambipolar. This behavior is surprising, as n-doping the contacts should suppress direct injection of minority charge carriers (holes). It was proposed that minority charge carrier injection and hence the ambipolar characteristic of n-doped OFETs can be explained by Zener tunneling inside the intrinsic pentacene layer underneath the drain electrode. It is shown that the electric field in this layer is indeed in the range of the breakdown field of pentacene based p-i-n Zener homodiodes. Doping the channel has a profound influence on the onset voltage of minority (hole) conduction. The onset voltage can be shifted by lightly n-doping the channel. The shift of onset voltage can be explained by two mechanisms: first, due to a larger voltage that has to be applied to the gate in order to fully deplete the n-doped layer. Second, it can be attributed to an increase in hole trapping by inactive dopants. Moreover, it has been shown that the threshold voltage of majority (electron) conduction is shifted by an increase in the doping concentration, and that the ambipolar OFETs can be turned into unipolar OFETs at

  8. Static Characteristics of the Ferroelectric Transistor Inverter

    Science.gov (United States)

    Mitchell, Cody; Laws, crystal; MacLeond, Todd C.; Ho, Fat D.

    2010-01-01

    The inverter is one of the most fundamental building blocks of digital logic, and it can be used as the foundation for understanding more complex logic gates and circuits. This paper presents the characteristics of an inverter circuit using a ferroelectric field-effect transistor. The voltage transfer characteristics are analyzed with respect to varying parameters such as supply voltage, input voltage, and load resistance. The effects of the ferroelectric layer between the gate and semiconductor are examined, and comparisons are made between the inverters using ferroelectric transistors and those using traditional MOSFETs.

  9. Switching Characteristics of Ferroelectric Transistor Inverters

    Science.gov (United States)

    Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

    2010-01-01

    This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

  10. Total Dose Effects in Conventional Bipolar Transistors

    Science.gov (United States)

    Johnston, A. H.; Swift, G. W.; Rax, B. G.

    1994-01-01

    This paper examines various factors in bipolar device construction and design, and discusses their impact on radiation hardness. The intent of the paper is to improve understanding of the underlying mechanisms for practical devices without special test structures, and to provide (1) guidance in ways to select transistor designs that are more resistant to radiation damage, and (2) methods to estimate the maximum amount of damage that might be expected from a basic transistor design. The latter factor is extremely important in assessing the risk that future lots of devices will be substantially below design limits, which are usually based on test data for older devices.

  11. Graphene Field Effect Transistor for Radiation Detection

    Science.gov (United States)

    Li, Mary J. (Inventor); Chen, Zhihong (Inventor)

    2016-01-01

    The present invention relates to a graphene field effect transistor-based radiation sensor for use in a variety of radiation detection applications, including manned spaceflight missions. The sensing mechanism of the radiation sensor is based on the high sensitivity of graphene in the local change of electric field that can result from the interaction of ionizing radiation with a gated undoped silicon absorber serving as the supporting substrate in the graphene field effect transistor. The radiation sensor has low power and high sensitivity, a flexible structure, and a wide temperature range, and can be used in a variety of applications, particularly in space missions for human exploration.

  12. VHDL simulation with access to transistor models

    Science.gov (United States)

    Gibson, J.

    1991-01-01

    Hardware description languages such as VHDL have evolved to aid in the design of systems with large numbers of elements and a wide range of electronic and logical abstractions. For high performance circuits, behavioral models may not be able to efficiently include enough detail to give designers confidence in a simulation's accuracy. One option is to provide a link between the VHDL environment and a transistor level simulation environment. The coupling of the Vantage Analysis Systems VHDL simulator and the NOVA simulator provides the combination of VHDL modeling and transistor modeling.

  13. Dielectric Engineered Tunnel Field-Effect Transistor

    OpenAIRE

    Ilatikhameneh, Hesameddin; Ameen, Tarek A.; Klimeck, Gerhard; Appenzeller, Joerg; Rahman, Rajib

    2015-01-01

    The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics results in a high electric field at the tunnel junction. As a result a record ON-current of about 1000 uA/um and a subthreshold swing (SS) below 20mV/dec are predicted for WTe2 DE-TFET. The proposed TFET works based on a homojunction channel and electrically doped contacts both of which are immune to interface stat...

  14. Constructing Diodes and Transistors for Ultracold Atoms

    Science.gov (United States)

    Pepino, Ronald; Cooper, John; Anderson, Dana; Holland, Murray

    2008-05-01

    The ultracold atom-optical analogy to electronic systems is presented, along with the master equation formalism that is applied to this novel physical context of system-reservoir interactions. The proposed formalism lends itself quite readily to not only the study of atomtronic systems, but also transport properties of ultracold atoms in optical lattices. We demonstrate how these systems can be configured so that they emulate the behavior of the electronic diode, field effect transistor (FET), and bipolar junction transistor (BJT). The behavior of simple logic gates: namely, the AND and OR gates are follow as direct consequences of the atomtronic BJTs.

  15. Past and future in accident prevention and learning : Single case or big data?

    NARCIS (Netherlands)

    Stoop, J.A.A.M.; Dechy, Nicolas; Dien, Yves; Tulonen, Tuuli

    2016-01-01

    The European Safety Reliability and Data Association (ESReDA) has since 1993 set up a series of Project Groups dealing with the different angles of ‘accident investigation’ and ‘learning from events’. With the 25th Anniversary of ESReDA now in 2016, the core of this group is still active, and has

  16. Past and future in accident prevention and learning : single case or big data?

    NARCIS (Netherlands)

    Stoop, John; Dechy, Nicolas; Dien, Yves; Tulonen, Tuuli

    2016-01-01

    The European Safety Reliability and Data Association (ESReDA) has since 1993 set up a series of Project Groups dealing with the different angles of ‘accident investigation’ and ‘learning from events’. With the 25th Anniversary of ESReDA now in 2016, the core of this group is still active, and has

  17. Co-Located Single Display Collaborative Learning for Early Childhood Education

    Science.gov (United States)

    Gomez, Florencia; Nussbaum, Miguel; Weitz, Juan F.; Lopez, Ximena; Mena, Javiera; Torres, Alex

    2013-01-01

    The benefits of collaborative learning are well documented. However, most of the research has been done with children beyond the ages of early childhood. This could be due to the common and erroneous belief that young children have not developed the capacity to work collaboratively toward a given aim. In this paper we show how small group…

  18. Learning Transitive Verbs from Single-Word Verbs in the Input by Young Children Acquiring English

    Science.gov (United States)

    Ninio, Anat

    2016-01-01

    The environmental context of verbs addressed by adults to young children is claimed to be uninformative regarding the verbs' meaning, yielding the Syntactic Bootstrapping Hypothesis that, for verb learning, full sentences are needed to demonstrate the semantic arguments of verbs. However, reanalysis of Gleitman's (1990) original data regarding…

  19. Analysis of the learning curve for peroral endoscopic myotomy for esophageal achalasia: Single-center, two-operator experience.

    Science.gov (United States)

    Lv, Houning; Zhao, Ningning; Zheng, Zhongqing; Wang, Tao; Yang, Fang; Jiang, Xihui; Lin, Lin; Sun, Chao; Wang, Bangmao

    2017-05-01

    Peroral endoscopic myotomy (POEM) has emerged as an advanced technique for the treatment of achalasia, and defining the learning curve is mandatory. From August 2011 to June 2014, two operators in our institution (A&B) carried out POEM on 35 and 33 consecutive patients, respectively. Moving average and cumulative sum (CUSUM) methods were used to analyze the POEM learning curve for corrected operative time (cOT), referring to duration of per centimeter myotomy. Additionally, perioperative outcomes were compared among distinct learning curve phases. Using the moving average method, cOT reached a plateau at the 29th case and at the 24th case for operators A and B, respectively. CUSUM analysis identified three phases: initial learning period (Phase 1), efficiency period (Phase 2) and mastery period (Phase 3). The relatively smooth state in the CUSUM graph occurred at the 26th case and at the 24th case for operators A and B, respectively. Mean cOT of distinct phases for operator A were 8.32, 5.20 and 3.97 min, whereas they were 5.99, 3.06 and 3.75 min for operator B, respectively. Eckardt score and lower esophageal sphincter pressure significantly decreased during the 1-year follow-up period. Data were comparable regarding patient characteristics and perioperative outcomes. This single-center study demonstrated that expert endoscopists with experience in esophageal endoscopic submucosal dissection reached a plateau in learning of POEM after approximately 25 cases. © 2016 Japan Gastroenterological Endoscopy Society.

  20. Electrical and noise characteristics of graphene field-effect transistors: ambient effects, noise sources and physical mechanisms.

    Science.gov (United States)

    Rumyantsev, S; Liu, G; Stillman, W; Shur, M; Balandin, A A

    2010-10-06

    We fabricated a large number of single and bilayer graphene transistors and carried out a systematic experimental study of their low-frequency noise characteristics. Special attention was given to determining the dominant noise sources in these devices and the effect of aging on the current-voltage and noise characteristics. The analysis of the noise spectral density dependence on the area of graphene channel showed that the dominant contributions to the low-frequency electronic noise come from the graphene layer itself rather than from the contacts. Aging of graphene transistors due to exposure to ambient conditions for over a month resulted in substantially increased noise, attributed to the decreasing mobility of graphene and increasing contact resistance. The noise spectral density in both single and bilayer graphene transistors either increased with deviation from the charge neutrality point or depended weakly on the gate bias. This observation confirms that the low-frequency noise characteristics of graphene transistors are qualitatively different from those of conventional silicon metal-oxide-semiconductor field-effect transistors.

  1. Power spectral density of a single Brownian trajectory: what one can and cannot learn from it

    Science.gov (United States)

    Krapf, Diego; Marinari, Enzo; Metzler, Ralf; Oshanin, Gleb; Xu, Xinran; Squarcini, Alessio

    2018-02-01

    The power spectral density (PSD) of any time-dependent stochastic process X t is a meaningful feature of its spectral content. In its text-book definition, the PSD is the Fourier transform of the covariance function of X t over an infinitely large observation time T, that is, it is defined as an ensemble-averaged property taken in the limit T\\to ∞ . A legitimate question is what information on the PSD can be reliably obtained from single-trajectory experiments, if one goes beyond the standard definition and analyzes the PSD of a single trajectory recorded for a finite observation time T. In quest for this answer, for a d-dimensional Brownian motion (BM) we calculate the probability density function of a single-trajectory PSD for arbitrary frequency f, finite observation time T and arbitrary number k of projections of the trajectory on different axes. We show analytically that the scaling exponent for the frequency-dependence of the PSD specific to an ensemble of BM trajectories can be already obtained from a single trajectory, while the numerical amplitude in the relation between the ensemble-averaged and single-trajectory PSDs is a fluctuating property which varies from realization to realization. The distribution of this amplitude is calculated exactly and is discussed in detail. Our results are confirmed by numerical simulations and single-particle tracking experiments, with remarkably good agreement. In addition we consider a truncated Wiener representation of BM, and the case of a discrete-time lattice random walk. We highlight some differences in the behavior of a single-trajectory PSD for BM and for the two latter situations. The framework developed herein will allow for meaningful physical analysis of experimental stochastic trajectories.

  2. Transistor-based particle detection systems and methods

    Science.gov (United States)

    Jain, Ankit; Nair, Pradeep R.; Alam, Muhammad Ashraful

    2015-06-09

    Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.

  3. Design method for a digitally trimmable MOS transistor structure

    DEFF Research Database (Denmark)

    Ning, Feng; Bruun, Erik

    1996-01-01

    A digitally trimmable MOS transistor is a MOS transistor consisting of a drain, a source, and a main gate as well as several subgates. The transconductance of the transistor is tunabledigitally by means of connecting subgates either to the main gate or to the source terminal. In this paper......, a systematic design method for a digitally trimmable MOS transistor structure is proposed. Using the proposed method, we have designed a digitally trimmable MOS transistor structure and prototype devices were fabricated in a 2.4 micron n-well CMOS technology. Through measurements on these devices, the design...... method has been experimentally confirmed. The trimmable MOS transistor structure has been applied to a high precision current mirror to reduce mismatch in the current mirror. With the trimmable transistor structure, the mismatch can be reduced by more than one order of magnitude....

  4. High mobility and quantum well transistors design and TCAD simulation

    CERN Document Server

    Hellings, Geert

    2013-01-01

    For many decades, the semiconductor industry has miniaturized transistors, delivering increased computing power to consumers at decreased cost. However, mere transistor downsizing does no longer provide the same improvements. One interesting option to further improve transistor characteristics is to use high mobility materials such as germanium and III-V materials. However, transistors have to be redesigned in order to fully benefit from these alternative materials. High Mobility and Quantum Well Transistors: Design and TCAD Simulation investigates planar bulk Germanium pFET technology in chapters 2-4, focusing on both the fabrication of such a technology and on the process and electrical TCAD simulation. Furthermore, this book shows that Quantum Well based transistors can leverage the benefits of these alternative materials, since they confine the charge carriers to the high-mobility material using a heterostructure. The design and fabrication of one particular transistor structure - the SiGe Implant-Free Qu...

  5. DeepCpG: accurate prediction of single-cell DNA methylation states using deep learning.

    Science.gov (United States)

    Angermueller, Christof; Lee, Heather J; Reik, Wolf; Stegle, Oliver

    2017-04-11

    Recent technological advances have enabled DNA methylation to be assayed at single-cell resolution. However, current protocols are limited by incomplete CpG coverage and hence methods to predict missing methylation states are critical to enable genome-wide analyses. We report DeepCpG, a computational approach based on deep neural networks to predict methylation states in single cells. We evaluate DeepCpG on single-cell methylation data from five cell types generated using alternative sequencing protocols. DeepCpG yields substantially more accurate predictions than previous methods. Additionally, we show that the model parameters can be interpreted, thereby providing insights into how sequence composition affects methylation variability.

  6. SiC Field Effect Transistor Technology Demonstrating Prolonged Stable Operation at 500 C

    Science.gov (United States)

    Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Okojie, Robert S.; Beheim, Glenn M.; Meredith, Roger; Ferrier, Terry

    2006-01-01

    While there have been numerous reports of short-term transistor operation at 500 degree C or above, these devices have previously not demonstrated sufficient long-term operational durability at 500 degree C to be considered viable for most envisioned applications. This paper reports the development of Silicone Carbi field effect transistors capable of long-term electrical operation at 500 degree C. A 6H-SiC MESFET was packaged and subjected to continuous electrical operation while residing in a 500 degree C oven in oxidizing air atmosphere for over 2400 hours. The transistor gain, saturation current (IDSS), and on-resistance (RDS) changed by less than 20% from initial values throughout the duration of the biased 500 degree C test. Another high-temperature packaged 6H-SiC MESFET was employed to form a simple one-stage high-temperature low-frequency voltage amplifier. This single-stage common-source amplifier demonstrated stable continuous electrical operation (negligible changes to gain and operating biases) for over 600 hours while residing in a 500 degree C air ambient oven. In both cases, increased leakage from annealing of the Schottky gate-to-channel diode was the dominant transistor degradation mechanism that limited the duration of 500 degree C electrical operation.

  7. Extraction of mobility and Degradation coefficients in double gate junctionless transistors

    Science.gov (United States)

    Bhuvaneshwari, Y. V.; Kranti, Abhinav

    2017-12-01

    In this work, we use the modified McLarty function to understand and extract accumulation (μ acc) and bulk (μ bulk) mobility in Double Gate (DG) Junctionless (JL) MOSFETs over a wide range of doping concentration (N d) and temperature range (250 K to 520 K). The approach enables the estimation of mobility and its attenuation factors (θ 1 and θ 2) by a single method. The extracted results indicate that μ acc can reach higher values than μ bulk due to the screening effect. Results also show that θ 2 extracted in the accumulation regime of JL transistors exhibit relatively low values in comparison to inversion and accumulation mode devices. It is shown that the attenuation factor (θ 1) in JL devices designed with higher N d (≥1019 cm‑3) is mainly affected by series resistance (R sd) whereas, in inversion mode (IM) and Accumulation mode (AM) devices, θ 1 factor is governed by both the intrinsic mobility reduction factor (θ 10) and R sd. Additionally, the impact of variation in oxide thickness (T ox), gate length (L g), N d and temperature on θ 1 and θ 2 has been investigated for JL transistor. The weak dependence of μ bulk and μ acc on temperature shows the prevalence of coulomb scattering over phonon scattering for heavily doped JL transistors. The work provides insights into different modes of operation, extraction of mobility and attenuation factors which will be useful for the development of compact models for JL transistors.

  8. On the learning difficulty of visual and auditory modal concepts: Evidence for a single processing system.

    Science.gov (United States)

    Vigo, Ronaldo; Doan, Karina-Mikayla C; Doan, Charles A; Pinegar, Shannon

    2018-02-01

    The logic operators (e.g., "and," "or," "if, then") play a fundamental role in concept formation, syntactic construction, semantic expression, and deductive reasoning. In spite of this very general and basic role, there are relatively few studies in the literature that focus on their conceptual nature. In the current investigation, we examine, for the first time, the learning difficulty experienced by observers in classifying members belonging to these primitive "modal concepts" instantiated with sets of acoustic and visual stimuli. We report results from two categorization experiments that suggest the acquisition of acoustic and visual modal concepts is achieved by the same general cognitive mechanism. Additionally, we attempt to account for these results with two models of concept learning difficulty: the generalized invariance structure theory model (Vigo in Cognition 129(1):138-162, 2013, Mathematical principles of human conceptual behavior, Routledge, New York, 2014) and the generalized context model (Nosofsky in J Exp Psychol Learn Mem Cogn 10(1):104-114, 1984, J Exp Psychol 115(1):39-57, 1986).

  9. Short-Term Synaptic Plasticity Regulation in Solution-Gated Indium-Gallium-Zinc-Oxide Electric-Double-Layer Transistors.

    Science.gov (United States)

    Wan, Chang Jin; Liu, Yang Hui; Zhu, Li Qiang; Feng, Ping; Shi, Yi; Wan, Qing

    2016-04-20

    In the biological nervous system, synaptic plasticity regulation is based on the modulation of ionic fluxes, and such regulation was regarded as the fundamental mechanism underlying memory and learning. Inspired by such biological strategies, indium-gallium-zinc-oxide (IGZO) electric-double-layer (EDL) transistors gated by aqueous solutions were proposed for synaptic behavior emulations. Short-term synaptic plasticity, such as paired-pulse facilitation, high-pass filtering, and orientation tuning, was experimentally emulated in these EDL transistors. Most importantly, we found that such short-term synaptic plasticity can be effectively regulated by alcohol (ethyl alcohol) and salt (potassium chloride) additives. Our results suggest that solution gated oxide-based EDL transistors could act as the platforms for short-term synaptic plasticity emulation.

  10. Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

    International Nuclear Information System (INIS)

    Deen, David A.; Storm, David F.; Meyer, David J.; Bass, Robert; Binari, Steven C.; Gougousi, Theodosia; Evans, Keith R.

    2014-01-01

    A series of six ultrathin AlN/GaN heterostructures with varied AlN thicknesses from 1.5–6 nm have been grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of barrier thickness and homo-epitaxial growth on transistor performance. Room temperature Hall characteristics revealed mobility of 1700 cm 2 /V s and sheet resistance of 130 Ω/□ for a 3 nm thick barrier, ranking amongst the lowest room-temperature sheet resistance values reported for a polarization-doped single heterostructure in the III-Nitride family. DC and small signal HEMT electrical characteristics from submicron gate length HEMTs further elucidated the effect of the AlN barrier thickness on device performance.

  11. Impact of barrier thickness on transistor performance in AlN/GaN high electron mobility transistors grown on free-standing GaN substrates

    Energy Technology Data Exchange (ETDEWEB)

    Deen, David A., E-mail: david.deen@alumni.nd.edu; Storm, David F.; Meyer, David J.; Bass, Robert; Binari, Steven C. [Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375-5347 (United States); Gougousi, Theodosia [Physics Department, University of Maryland Baltimore County, Baltimore, Maryland 21250 (United States); Evans, Keith R. [Kyma Technologies, Raleigh, North Carolina 27617 (United States)

    2014-09-01

    A series of six ultrathin AlN/GaN heterostructures with varied AlN thicknesses from 1.5–6 nm have been grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. High electron mobility transistors (HEMTs) were fabricated from the set in order to assess the impact of barrier thickness and homo-epitaxial growth on transistor performance. Room temperature Hall characteristics revealed mobility of 1700 cm{sup 2}/V s and sheet resistance of 130 Ω/□ for a 3 nm thick barrier, ranking amongst the lowest room-temperature sheet resistance values reported for a polarization-doped single heterostructure in the III-Nitride family. DC and small signal HEMT electrical characteristics from submicron gate length HEMTs further elucidated the effect of the AlN barrier thickness on device performance.

  12. Assessment of Phospohrene Field Effect Transistors

    Science.gov (United States)

    2018-01-28

    Promising transistors based on a few layers of phosphorus atoms," in IEEE MTT-5 IMWS- AMP , Suzhou, China, Jul. 2015, pp. 1-3. DOI: 10.1109/LED...2014.2362841. DOI: 10.1109/IMWS- AMP .2015.7324944. Keywords: Contacts, dielectric films, MOSFETs, passivation, stability. [5] X. Luo, K. Xiong, J.C. M. Hwang, Y

  13. Thermal transistor utilizing gas-liquid transition

    KAUST Repository

    Komatsu, Teruhisa S.

    2011-01-25

    We propose a simple thermal transistor, a device to control heat current. In order to effectively change the current, we utilize the gas-liquid transition of the heat-conducting medium (fluid) because the gas region can act as a good thermal insulator. The three terminals of the transistor are located at both ends and the center of the system, and are put into contact with distinct heat baths. The key idea is a special arrangement of the three terminals. The temperature at one end (the gate temperature) is used as an input signal to control the heat current between the center (source, hot) and another end (drain, cold). Simulating the nanoscale systems of this transistor, control of heat current is demonstrated. The heat current is effectively cut off when the gate temperature is cold and it flows normally when it is hot. By using an extended version of this transistor, we also simulate a primitive application for an inverter. © 2011 American Physical Society.

  14. Modelling and characterisation of transistors | Akande | Global ...

    African Journals Online (AJOL)

    Models and characterisation of active devices that control the flow of energy operating within and outside the active region of the operating domain are presented. Specifically, the incremental charge carrier and Ebers Moll models of the bipolar junction transistor are presented and the parameters of electrical behaviour of ...

  15. Radiation Damage In Advanced Bipolar Transistors

    Science.gov (United States)

    Zoutendyk, John A.; Goben, Charles A.; Berndt, Dale F.

    1989-01-01

    Report describes measurements of common-emitter current gains (hFE) of advanced bipolar silicon transistors before, during, and after irradiation with 275-MeV bromine ions, 2.5-MeV electrons, and conductivity rays from cobalt-60 atoms.

  16. Advancement in organic nanofiber based transistors

    DEFF Research Database (Denmark)

    Jensen, Per Baunegaard With; Kjelstrup-Hansen, Jakob; Tavares, Luciana

    The focus of this project is to study the light emission from nanofiber based organic light-emitting transistors (OLETs) with the overall aim of developing efficient, nanoscale light sources with different colors integrated on-chip. The research performed here regards the fabrication and characte...

  17. A ferroelectric transparent thin-film transistor

    NARCIS (Netherlands)

    Prins, MWJ; GrosseHolz, KO; Muller, G; Cillessen, JFM; Giesbers, JB; Weening, RP; Wolf, RM

    1996-01-01

    Operation is demonstrated of a field-effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists of a high mobility Sb-doped n-type SnO2 semiconductor layer, PbZr0.2Ti0.8Os3 as a ferroelectric

  18. Series transistors isolate amplifier from flyback voltage

    Science.gov (United States)

    Banks, W.

    1967-01-01

    Circuit enables high sawtooth currents to be passed through a deflection coil and isolate the coil driving amplifier from the flyback voltage. It incorporates a switch consisting of transistors in series with the driving amplifier and deflection coil. The switch disconnects the deflection coil from the amplifier during the retrace time.

  19. QAcon: single model quality assessment using protein structural and contact information with machine learning techniques.

    Science.gov (United States)

    Cao, Renzhi; Adhikari, Badri; Bhattacharya, Debswapna; Sun, Miao; Hou, Jie; Cheng, Jianlin

    2017-02-15

    Protein model quality assessment (QA) plays a very important role in protein structure prediction. It can be divided into two groups of methods: single model and consensus QA method. The consensus QA methods may fail when there is a large portion of low quality models in the model pool. In this paper, we develop a novel single-model quality assessment method QAcon utilizing structural features, physicochemical properties, and residue contact predictions. We apply residue-residue contact information predicted by two protein contact prediction methods PSICOV and DNcon to generate a new score as feature for quality assessment. This novel feature and other 11 features are used as input to train a two-layer neural network on CASP9 datasets to predict the quality of a single protein model. We blindly benchmarked our method QAcon on CASP11 dataset as the MULTICOM-CLUSTER server. Based on the evaluation, our method is ranked as one of the top single model QA methods. The good performance of the features based on contact prediction illustrates the value of using contact information in protein quality assessment. The web server and the source code of QAcon are freely available at: http://cactus.rnet.missouri.edu/QAcon. chengji@missouri.edu. Supplementary data are available at Bioinformatics online. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please e-mail: journals.permissions@oup.com

  20. Should Professional Ethics Education Incorporate Single-Professional or Interprofessional Learning?

    Science.gov (United States)

    Caldicott, Catherine V.; Braun, Eli A.

    2011-01-01

    Since ethical issues in the contemporary delivery of health care involve doctors, nurses, technicians, and members of other health professions, the authors consider whether members of diverse health care occupations might benefit from studying ethics in a single classroom. While interprofessional courses may be better at teaching the ethics of the…

  1. Single NMR image super-resolution based on extreme learning machine.

    Science.gov (United States)

    Wang, Zhiqiong; Xin, Junchang; Wang, Zhongyang; Tian, Shuo; Qiu, Xuejun

    2016-10-01

    The performance limitation of MRI equipment and higher resolution demand of NMR images from radiologists have formed a strong contrast. Therefore, it is important to study the super resolution algorithm suitable for NMR images, using low costs software to replace the expensive equipment-updating. Firstly, a series of NMR images are obtained from original NMR images with original noise to the lowest resolution images with the highest noise. Then, based on extreme learning machine, the mapping relation model is constructed from lower resolution NMR images with higher noise to higher resolution NMR images with lower noise in each pair of adjacent images in the obtained image sequence. Finally, the optimal mapping model is established by the ensemble way to reconstruct the higher resolution NMR images with lower noise on the basis of original resolution NMR images with original noise. Experiments are carried out by 990111 NMR brain images in datasets NITRC, REMBRANDT, RIDER NEURO MRI, TCGA-GBM and TCGA-LGG. The performance of proposed method is compared with three approaches through 7 indexes, and the experimental results show that our proposed method has a significant improvement. Since our method considers the influence of the noise, it has 20% higher in Peak-Signal-to-Noise-Ratio comparison. As our method is sensitive to details, and has a better characteristic retention, it has higher image quality upgrade of 15% in the additional evaluation. Finally, since extreme learning machine has a celerity learning speed, our method is 46.1% faster. Copyright © 2016 Associazione Italiana di Fisica Medica. Published by Elsevier Ltd. All rights reserved.

  2. Formation of a Stable p-n Junction in a Liquid-Gated MoS2 Ambipolar Transistor

    NARCIS (Netherlands)

    Zhang, Y. J.; Ye, J. T.; Yornogida, Y.; Takenobu, T.; Iwasa, Y.

    Molybdenum disulfide (MoS2) has gained attention because of its high mobility and circular dichroism. As a crucial step to merge these advantages into a single device, we present a method that electronically controls and locates p-n junctions in liquid-gated ambipolar MoS2 transistors. A

  3. Organic Field Effect Transistors Based on Graphene and Hexagonal Boron Nitride Heterostructures

    OpenAIRE

    Kang, Seok Ju; Lee, Gwan-Hyoung; Yu, Young-Jun; Zhao, Yue; Kim, Bumjung; Watanabe, Kenji; Taniguchi, Takashi; Hone, James; Kim, Philip; Nuckolls, Colin

    2014-01-01

    Enhancing the device performance of single crystal organic field effect transistors (OFETs) requires both optimized engineering of efficient injection of the carriers through the contact and improvement of the dielectric interface for reduction of traps and scattering centers. Since the accumulation and flow of charge carriers in operating organic FETs takes place in the first few layers of the semiconductor next to the dielectric, the mobility can be easily degraded by surface roughness, cha...

  4. Organic Electrolyte Based Pulsed Nanoplating and Fabrication of Carbon Nanotube Network Transistors

    Science.gov (United States)

    Kang, Myung Gil; Hwang, Dong Hoon; Kim, Tae Geun; Hwang, Jong Seung; Ahn, Doyeol; Whang, Dongmok; Hwang, Sung Woo

    2011-06-01

    The formation of gold nanocontacts was performed using a pulsed electrochemical plating technique. The effect of various plating variables on the surface roughness of the plated electrodes was studied in the high frequency regime where the reduction reaction of gold complex becomes the bottleneck process. We demonstrated the selective contact formation of single wall carbon nanotube network field effect transistors (FETs) with this technique. The fabricated FETs exhibit usual p-type behavior with the performance comparable to usual network FETs.

  5. Should professional ethics education incorporate single-professional or interprofessional learning?

    Science.gov (United States)

    Caldicott, Catherine V; Braun, Eli A

    2011-03-01

    Since ethical issues in the contemporary delivery of health care involve doctors, nurses, technicians, and members of other health professions, the authors consider whether members of diverse health care occupations might benefit from studying ethics in a single classroom. While interprofessional courses may be better at teaching the ethics of the relationships between and among the various health professions, single-professional courses may be better at teaching the ethics of relationships between particular kinds of professionals and patients. An ethics instructor's professional discipline affects his/her credibility with the students, and the course readings may not always be relevant to the actual work of a given discipline. With these challenges in mind, the authors suggest that the boundaries of ethics education in the health professions be reconceived to accommodate the professional mission of a specific discipline as well as the interdependence and collaboration that marks high quality health care.

  6. Colloquium : Electronic transport in single-crystal organic transistors

    NARCIS (Netherlands)

    Gershenson, M.E.; Podzorov, V.; Morpurgo, A.F.

    2006-01-01

    Small-molecule organic semiconductors, together with polymers, form the basis for the emerging field of organic electronics. Despite the rapid technological progress in this area, our understanding of fundamental electronic properties of these materials remains limited. Recently developed organic

  7. Single Electron Transistor Platform for Microgravity Proteomics, Phase II

    Data.gov (United States)

    National Aeronautics and Space Administration — This Phase II program builds from the successful Phase I efforts to demonstrate that Quantum Logic Devices' nanoelectronic platform for biological detection could...

  8. Single Electron Transistor Platform for Microgravity Proteomics, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Proteomic studies in microgravity are crucial to understanding the health effects of spaceflight on astronauts. Unfortunately, existing tools for measuring protein,...

  9. Highly stable thin film transistors using multilayer channel structure

    KAUST Repository

    Nayak, Pradipta K.

    2015-03-09

    We report highly stable gate-bias stress performance of thin film transistors (TFTs) using zinc oxide (ZnO)/hafnium oxide (HfO2) multilayer structure as the channel layer. Positive and negative gate-bias stress stability of the TFTs was measured at room temperature and at 60°C. A tremendous improvement in gate-bias stress stability was obtained in case of the TFT with multiple layers of ZnO embedded between HfO2 layers compared to the TFT with a single layer of ZnO as the semiconductor. The ultra-thin HfO2 layers act as passivation layers, which prevent the adsorption of oxygen and water molecules in the ZnO layer and hence significantly improve the gate-bias stress stability of ZnO TFTs.

  10. Deep learning and shapes similarity for joint segmentation and tracing single neurons in SEM images

    Science.gov (United States)

    Rao, Qiang; Xiao, Chi; Han, Hua; Chen, Xi; Shen, Lijun; Xie, Qiwei

    2017-02-01

    Extracting the structure of single neurons is critical for understanding how they function within the neural circuits. Recent developments in microscopy techniques, and the widely recognized need for openness and standardization provide a community resource for automated reconstruction of dendritic and axonal morphology of single neurons. In order to look into the fine structure of neurons, we use the Automated Tape-collecting Ultra Microtome Scanning Electron Microscopy (ATUM-SEM) to get images sequence of serial sections of animal brain tissue that densely packed with neurons. Different from other neuron reconstruction method, we propose a method that enhances the SEM images by detecting the neuronal membranes with deep convolutional neural network (DCNN) and segments single neurons by active contour with group shape similarity. We joint the segmentation and tracing together and they interact with each other by alternate iteration that tracing aids the selection of candidate region patch for active contour segmentation while the segmentation provides the neuron geometrical features which improve the robustness of tracing. The tracing model mainly relies on the neuron geometrical features and is updated after neuron being segmented on the every next section. Our method enables the reconstruction of neurons of the drosophila mushroom body which is cut to serial sections and imaged under SEM. Our method provides an elementary step for the whole reconstruction of neuronal networks.

  11. Dirac-Point Shift by Carrier Injection Barrier in Graphene Field-Effect Transistor Operation at Room Temperature.

    Science.gov (United States)

    Lee, Sungsik; Nathan, Arokia; Alexander-Webber, Jack; Braeuninger-Weimer, Philipp; Sagade, Abhay A; Lu, Haichang; Hasko, David; Robertson, John; Hofmann, Stephan

    2018-03-21

    A positive shift in the Dirac point in graphene field-effect transistors was observed with Hall-effect measurements coupled with Kelvin-probe measurements at room temperature. This shift can be explained by the asymmetrical behavior of the contact resistance by virtue of the electron injection barrier at the source contact. As an outcome, an intrinsic resistance is given to allow a retrieval of an intrinsic carrier mobility found to be decreased with increasing gate bias, suggesting the dominance of short-range scattering in a single-layer graphene field-effect transistor. These results analytically correlate the field-effect parameters with intrinsic graphene properties.

  12. Etude, réalisation et caractérisation du transistor à ionisation par impact (I-MOS)

    OpenAIRE

    Mayer, Frédéric

    2008-01-01

    The impact ionization transistor (I-MOS) is a new architecture enabling subthreshold slope smaller than 60mV/dec at room temperature, which is the intrinsic limit of the MOSFET architecture. The I-MOS is composed of a PiN diode, whose intrinsic area is partially covered by a gate. The target of this thesis is the performance evaluation of this new transistor from the single device to the circuit, as a potential post CMOS candidate. This device has been studied by the mean of TCAD simulations ...

  13. Can a single session of motor imagery promote motor learning of locomotion in older adults? A randomized controlled trial

    Directory of Open Access Journals (Sweden)

    Nicholson VP

    2018-04-01

    Full Text Available Vaughan P Nicholson,1 Justin WL Keogh,2–4 Nancy L Low Choy1 1School of Physiotherapy, Australian Catholic University, Brisbane, QLD, Australia; 2Faculty of Health Sciences and Medicine, Bond University, Robina, QLD, Australia; 3Human Potential Centre, AUT University, Auckland, New Zealand; 4Cluster for Health Improvement, Faculty of Science, Health, Education and Engineering, University of the Sunshine Coast, Sunshine Coast, QLD, Australia Purpose: To investigate the influence of a single session of locomotor-based motor imagery training on motor learning and physical performance. Patients and methods: Thirty independent adults aged >65 years took part in the randomized controlled trial. The study was conducted within an exercise science laboratory. Participants were randomly divided into three groups following baseline locomotor testing: motor imagery training, physical training, and control groups. The motor imagery training group completed 20 imagined repetitions of a locomotor task, the physical training group completed 20 physical repetitions of a locomotor task, and the control group spent 25 minutes playing mentally stimulating games on an iPad. Imagined and physical performance times were measured for each training repetition. Gait speed (preferred and fast, timed-up-and-go, gait variability and the time to complete an obstacle course were completed before and after the single training session. Results: Motor learning occurred in both the motor imagery training and physical training groups. Motor imagery training led to refinements in motor planning resulting in imagined movements better matching the physically performed movement at the end of training. Motor imagery and physical training also promoted improvements in some locomotion outcomes as demonstrated by medium to large effect size improvements after training for fast gait speed and timed-up-and-go. There were no training effects on gait variability. Conclusion: A single session

  14. Group IV nanotube transistors for next generation ubiquitous computing

    KAUST Repository

    Fahad, Hossain M.

    2014-06-04

    Evolution in transistor technology from increasingly large power consuming single gate planar devices to energy efficient multiple gate non-planar ultra-narrow (< 20 nm) fins has enhanced the scaling trend to facilitate doubling performance. However, this performance gain happens at the expense of arraying multiple devices (fins) per operation bit, due to their ultra-narrow dimensions (width) originated limited number of charges to induce appreciable amount of drive current. Additionally arraying degrades device off-state leakage and increases short channel characteristics, resulting in reduced chip level energy-efficiency. In this paper, a novel nanotube device (NTFET) topology based on conventional group IV (Si, SiGe) channel materials is discussed. This device utilizes a core/shell dual gate strategy to capitalize on the volume-inversion properties of an ultra-thin (< 10 nm) group IV nanotube channel to minimize leakage and short channel effects while maximizing performance in an area-efficient manner. It is also shown that the NTFET is capable of providing a higher output drive performance per unit chip area than an array of gate-all-around nanowires, while maintaining the leakage and short channel characteristics similar to that of a single gate-all-around nanowire, the latter being the most superior in terms of electrostatic gate control. In the age of big data and the multitude of devices contributing to the internet of things, the NTFET offers a new transistor topology alternative with maximum benefits from performance-energy efficiency-functionality perspective. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

  15. Method of making self-aligned lightly-doped-drain structure for MOS transistors

    Science.gov (United States)

    Weiner, Kurt H.; Carey, Paul G.

    2001-01-01

    A process for fabricating lightly-doped-drains (LDD) for short-channel metal oxide semiconductor (MOS) transistors. The process utilizes a pulsed laser process to incorporate the dopants, thus eliminating the prior oxide deposition and etching steps. During the process, the silicon in the source/drain region is melted by the laser energy. Impurities from the gas phase diffuse into the molten silicon to appropriately dope the source/drain regions. By controlling the energy of the laser, a lightly-doped-drain can be formed in one processing step. This is accomplished by first using a single high energy laser pulse to melt the silicon to a significant depth and thus the amount of dopants incorporated into the silicon is small. Furthermore, the dopants incorporated during this step diffuse to the edge of the MOS transistor gate structure. Next, many low energy laser pulses are used to heavily dope the source/drain silicon only in a very shallow region. Because of two-dimensional heat transfer at the MOS transistor gate edge, the low energy pulses are inset from the region initially doped by the high energy pulse. By computer control of the laser energy, the single high energy laser pulse and the subsequent low energy laser pulses are carried out in a single operational step to produce a self-aligned lightly-doped-drain-structure.

  16. Single Molecule Fluorescence Microscopy and Machine Learning for Rhesus D Antigen Classification

    Science.gov (United States)

    Borgmann, Daniela M.; Mayr, Sandra; Polin, Helene; Schaller, Susanne; Dorfer, Viktoria; Obritzberger, Lisa; Endmayr, Tanja; Gabriel, Christian; Winkler, Stephan M.; Jacak, Jaroslaw

    2016-09-01

    In transfusion medicine, the identification of the Rhesus D type is important to prevent anti-D immunisation in Rhesus D negative recipients. In particular, the detection of the very low expressed DEL phenotype is crucial and hence constitutes the bottleneck of standard immunohaematology. The current method of choice, adsorption-elution, does not provide unambiguous results. We have developed a complementary method of high sensitivity that allows reliable identification of D antigen expression. Here, we present a workflow composed of high-resolution fluorescence microscopy, image processing, and machine learning that - for the first time - enables the identification of even small amounts of D antigen on the cellular level. The high sensitivity of our technique captures the full range of D antigen expression (including D+, weak D, DEL, D-), allows automated population analyses, and results in classification test accuracies of up to 96%, even for very low expressed phenotypes.

  17. How Much Can We Learn from a Single Chromatographic Experiment? A Bayesian Perspective.

    Science.gov (United States)

    Wiczling, Paweł; Kaliszan, Roman

    2016-01-05

    In this work, we proposed and investigated a Bayesian inference procedure to find the desired chromatographic conditions based on known analyte properties (lipophilicity, pKa, and polar surface area) using one preliminary experiment. A previously developed nonlinear mixed effect model was used to specify the prior information about a new analyte with known physicochemical properties. Further, the prior (no preliminary data) and posterior predictive distribution (prior + one experiment) were determined sequentially to search towards the desired separation. The following isocratic high-performance reversed-phase liquid chromatographic conditions were sought: (1) retention time of a single analyte within the range of 4-6 min and (2) baseline separation of two analytes with retention times within the range of 4-10 min. The empirical posterior Bayesian distribution of parameters was estimated using the "slice sampling" Markov Chain Monte Carlo (MCMC) algorithm implemented in Matlab. The simulations with artificial analytes and experimental data of ketoprofen and papaverine were used to test the proposed methodology. The simulation experiment showed that for a single and two randomly selected analytes, there is 97% and 74% probability of obtaining a successful chromatogram using none or one preliminary experiment. The desired separation for ketoprofen and papaverine was established based on a single experiment. It was confirmed that the search for a desired separation rarely requires a large number of chromatographic analyses at least for a simple optimization problem. The proposed Bayesian-based optimization scheme is a powerful method of finding a desired chromatographic separation based on a small number of preliminary experiments.

  18. The influence of prior multiport experience on the learning curve for single-port thoracoscopic lobectomy: a multicentre comparative study†.

    Science.gov (United States)

    Martin-Ucar, Antonio E; Aragon, Javier; Bolufer Nadal, Sergio; Galvez Munoz, Carlos; Luo, Qigang; Perez Mendez, Itzel; Sihoe, Alan D L; Socci, Laura

    2017-06-01

    Competency in video-assisted thoracoscopic (VATS) lobectomy is estimated to be reached after the surgeon completes 50 cases. We wanted to explore the impact of competency in performing multiport VATS lobectomies on completing the needed number of single-port VATS. In a retrospective multicentre study, 6 individual surgeons (3 with previous competency in multiport VATS lobectomy and 3 without) submitted their first 50 cases of single-port VATS lobectomies. Extended and sublobar resections were excluded. Pre-, peri- and postoperative data were compared between the groups of surgeons. Chi-square and Wilcoxon's rank tests were used. The less experienced surgeons had previously attended dedicated training courses and visited with experts. A total of 300 cases were included [150 in Group A (surgeons with previous experience performing multiport VATS) and 150 in Group B (surgeons without extensive experience performing multiport VATS)]. Surgeons in Group B performed significantly more elective open lobectomies during their learning curve period than surgeons of Group A (58 vs 1). Patients in Group B were older and had more risk factors. There were 3 in-hospital deaths (respiratory failure, sepsis and fatal stroke). There were no differences between the groups in operative time, intensive care unit admissions, hospital stay, total complications, tumour size or number of N2 stations explored. Only the duration of intercostal drainage (2 vs 3 days, 0.012), incidence of respiratory tract infections (1% vs 7%, P  = 0.002) and conversion rates (4% vs 12%, P  = 0.018) were better in Group A. Patients characteristics played a role in the development of respiratory infections and longer drainage times but not in the need for conversion. Overall, postoperative outcomes during the learning curve period for single-port VATS lobectomies are not noticeably affected by previous multiport VATS experience. Less experienced surgeons were more selective in order to achieve

  19. A Predictive Model for Guillain-Barré Syndrome Based on Single Learning Algorithms

    Directory of Open Access Journals (Sweden)

    Juana Canul-Reich

    2017-01-01

    Full Text Available Background. Guillain-Barré Syndrome (GBS is a potentially fatal autoimmune neurological disorder. The severity varies among the four main subtypes, named as Acute Inflammatory Demyelinating Polyneuropathy (AIDP, Acute Motor Axonal Neuropathy (AMAN, Acute Motor Sensory Axonal Neuropathy (AMSAN, and Miller-Fisher Syndrome (MF. A proper subtype identification may help to promptly carry out adequate treatment in patients. Method. We perform experiments with 15 single classifiers in two scenarios: four subtypes’ classification and One versus All (OvA classification. We used a dataset with the 16 relevant features identified in a previous phase. Performance evaluation is made by 10-fold cross validation (10-FCV. Typical classification performance measures are used. A statistical test is conducted in order to identify the top five classifiers for each case. Results. In four GBS subtypes’ classification, half of the classifiers investigated in this study obtained an average accuracy above 0.90. In OvA classification, the two subtypes with the largest number of instances resulted in the best classification results. Conclusions. This study represents a comprehensive effort on creating a predictive model for Guillain-Barré Syndrome subtypes. Also, the analysis performed in this work provides insight about the best single classifiers for each classification case.

  20. Automatic single- and multi-label enzymatic function prediction by machine learning

    Directory of Open Access Journals (Sweden)

    Shervine Amidi

    2017-03-01

    Full Text Available The number of protein structures in the PDB database has been increasing more than 15-fold since 1999. The creation of computational models predicting enzymatic function is of major importance since such models provide the means to better understand the behavior of newly discovered enzymes when catalyzing chemical reactions. Until now, single-label classification has been widely performed for predicting enzymatic function limiting the application to enzymes performing unique reactions and introducing errors when multi-functional enzymes are examined. Indeed, some enzymes may be performing different reactions and can hence be directly associated with multiple enzymatic functions. In the present work, we propose a multi-label enzymatic function classification scheme that combines structural and amino acid sequence information. We investigate two fusion approaches (in the feature level and decision level and assess the methodology for general enzymatic function prediction indicated by the first digit of the enzyme commission (EC code (six main classes on 40,034 enzymes from the PDB database. The proposed single-label and multi-label models predict correctly the actual functional activities in 97.8% and 95.5% (based on Hamming-loss of the cases, respectively. Also the multi-label model predicts all possible enzymatic reactions in 85.4% of the multi-labeled enzymes when the number of reactions is unknown. Code and datasets are available at https://figshare.com/s/a63e0bafa9b71fc7cbd7.

  1. Learning environment assessments of a single curriculum being taught at two medical schools 10,000 miles apart.

    Science.gov (United States)

    Tackett, Sean; Shochet, Robert; Shilkofski, Nicole A; Colbert-Getz, Jorie; Rampal, Krishna; Abu Bakar, Hamidah; Wright, Scott

    2015-06-17

    Perdana University Graduate School of Medicine (PUGSOM), the first graduate-entry medical school in Malaysia, was established in 2011 in collaboration with Johns Hopkins University School of Medicine (JHUSOM), an American medical school. This study compared learning environments (LE) at these two schools, which shared the same overarching curriculum, along with a comparator Malaysian medical school, Cyberjaya University College of Medical Sciences (CUCMS). As a secondary aim, we compared 2 LE assessment tools - the widely-used Dundee Ready Educational Environment Measure (DREEM) and the newer Johns Hopkins Learning Environment Scale (JHLES). Students responded anonymously at the end of their first year of medical school to surveys which included DREEM, JHLES, single-item global LE assessment variables, and demographics questions. Respondents included 24/24 (100 %) students at PUGSOM, 100/120 (83 %) at JHUSOM, and 79/83 (95 %) at CUCMS. PUGSOM had the highest overall LE ratings (p safety" domains. JHLES detected significant differences across schools in 5/7 domains and had stronger correlations than DREEM to each global LE assessment variable. The inaugural class of medical students at PUGSOM rated their LE exceptionally highly, providing evidence that transporting a medical school curriculum may be successful. The JHLES showed promise as a LE assessment tool for use in international settings.

  2. Single-centre experience of retroperitoneoscopic approach in urology with tips to overcome the steep learning curve

    Directory of Open Access Journals (Sweden)

    Aneesh Srivastava

    2016-01-01

    Full Text Available Context: The retroperitoneoscopic or retroperitoneal (RP surgical approach has not become as popular as the transperitoneal (TP one due to the steeper learning curve. Aims: Our single-institution experience focuses on the feasibility, advantages and complications of retroperitoneoscopic surgeries (RS performed over the past 10 years. Tips and tricks have been discussed to overcome the steep learning curve and these are emphasised. Settings and Design: This study made a retrospective analysis of computerised hospital data of patients who underwent RP urological procedures from 2003 to 2013 at a tertiary care centre. Patients and Methods: Between 2003 and 2013, 314 cases of RS were performed for various urological procedures. We analysed the operative time, peri-operative complications, time to return of bowel sound, length of hospital stay, and advantages and difficulties involved. Post-operative complications were stratified into five grades using modified Clavien classification (MCC. Results: RS were successfully completed in 95.5% of patients, with 4% of the procedures electively performed by the combined approach (both RP and TP; 3.2% required open conversion and 1.3% were converted to the TP approach. The most common cause for conversion was bleeding. Mean hospital stay was 3.2 ± 1.2 days and the mean time for returning of bowel sounds was 16.5 ± 5.4 h. Of the patients, 1.4% required peri-operative blood transfusion. A total of 16 patients (5% had post-operative complications and the majority were grades I and II as per MCC. The rates of intra-operative and post-operative complications depended on the difficulty of the procedure, but the complications diminished over the years with the increasing experience of surgeons. Conclusion: Retroperitoneoscopy has proven an excellent approach, with certain advantages. The tips and tricks that have been provided and emphasised should definitely help to minimise the steep learning curve.

  3. Single electron-ics with carbon nanotubes

    NARCIS (Netherlands)

    Götz, G.T.J.

    2010-01-01

    We experimentally investigate Quantum Dots, formed in Carbon Nanotubes. The first part of this thesis deals with charge sensing on such quantum dots. The charge sensor is a metallic Single-electron-transistor, sensitive to the charge of a single electron on the quantum dot. We use this technique for

  4. Radiation-tolerant, sidewall-hardened SOI/MOS transistors

    International Nuclear Information System (INIS)

    Tsao, S.S.; Fleetwood, D.M.; Weaver, H.T.; Pfeiffer, L.; Celler, G.K.

    1987-01-01

    Total dose radiation effects were measured for sidewall-hardened n-channel SOI/MOS transistors, fabricated in zone-melt-recrystallized (ZMR) and oxygen-implanted (SIMOX) SOI materials. The authors compare the radiation responses of transistors with three types of sidewall or edge configurations: island transistors with passivated edges, island transistors without passivated edges, and edgeless (enclosed-gate) transistors. Data from these three test devices allow clear separation of front-, back-, and edge-channel conduction. Passivated edge channels were hard to Co-60 doses in excess of 24 Mrad(Si). The overall hardness of the passivated-edge transistors is limited only by the radiation-induced threshold voltage shifts (about -1 V at 1.0 Mrad) of the top channel. No significant differences in total-dose response of ZMR and SIMOX devices were observed under the radiation conditions employed

  5. Application of the Johnson criteria to graphene transistors

    International Nuclear Information System (INIS)

    Kelly, M J

    2013-01-01

    For 60 years, the Johnson criteria have guided the development of materials and the materials choices for field-effect and bipolar transistor technology. Intrinsic graphene is a semi-metal, precluding transistor applications, but only under lateral bias is a gap opened and transistor action possible. This first application of the Johnson criteria to biased graphene suggests that this material will struggle to ever achieve competitive commercial applications. (fast track communication)

  6. Organic Thin-Film Transistor (OTFT-Based Sensors

    Directory of Open Access Journals (Sweden)

    Daniel Elkington

    2014-04-01

    Full Text Available Organic thin film transistors have been a popular research topic in recent decades and have found applications from flexible displays to disposable sensors. In this review, we present an overview of some notable articles reporting sensing applications for organic transistors with a focus on the most recent publications. In particular, we concentrate on three main types of organic transistor-based sensors: biosensors, pressure sensors and “e-nose”/vapour sensors.

  7. Vertically Integrated Multiple Nanowire Field Effect Transistor.

    Science.gov (United States)

    Lee, Byung-Hyun; Kang, Min-Ho; Ahn, Dae-Chul; Park, Jun-Young; Bang, Tewook; Jeon, Seung-Bae; Hur, Jae; Lee, Dongil; Choi, Yang-Kyu

    2015-12-09

    A vertically integrated multiple channel-based field-effect transistor (FET) with the highest number of nanowires reported ever is demonstrated on a bulk silicon substrate without use of wet etching. The driving current is increased by 5-fold due to the inherent vertically stacked five-level nanowires, thus showing good feasibility of three-dimensional integration-based high performance transistor. The developed fabrication process, which is simple and reproducible, is used to create multiple stiction-free and uniformly sized nanowires with the aid of the one-route all-dry etching process (ORADEP). Furthermore, the proposed FET is revamped to create nonvolatile memory with the adoption of a charge trapping layer for enhanced practicality. Thus, this research suggests an ultimate design for the end-of-the-roadmap devices to overcome the limits of scaling.

  8. Cylindrical-shaped nanotube field effect transistor

    KAUST Repository

    Hussain, Muhammad Mustafa

    2015-12-29

    A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (I.sub.on/I.sub.off) than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.

  9. Benchmarking organic mixed conductors for transistors

    KAUST Repository

    Inal, Sahika

    2017-11-20

    Organic mixed conductors have garnered significant attention in applications from bioelectronics to energy storage/generation. Their implementation in organic transistors has led to enhanced biosensing, neuromorphic function, and specialized circuits. While a narrow class of conducting polymers continues to excel in these new applications, materials design efforts have accelerated as researchers target new functionality, processability, and improved performance/stability. Materials for organic electrochemical transistors (OECTs) require both efficient electronic transport and facile ion injection in order to sustain high capacity. In this work, we show that the product of the electronic mobility and volumetric charge storage capacity (µC*) is the materials/system figure of merit; we use this framework to benchmark and compare the steady-state OECT performance of ten previously reported materials. This product can be independently verified and decoupled to guide materials design and processing. OECTs can therefore be used as a tool for understanding and designing new organic mixed conductors.

  10. Nanowire field effect transistors principles and applications

    CERN Document Server

    Jeong, Yoon-Ha

    2014-01-01

    “Nanowire Field Effect Transistor: Basic Principles and Applications” places an emphasis on the application aspects of nanowire field effect transistors (NWFET). Device physics and electronics are discussed in a compact manner, together with the p-n junction diode and MOSFET, the former as an essential element in NWFET and the latter as a general background of the FET. During this discussion, the photo-diode, solar cell, LED, LD, DRAM, flash EEPROM and sensors are highlighted to pave the way for similar applications of NWFET. Modeling is discussed in close analogy and comparison with MOSFETs. Contributors focus on processing, electrostatic discharge (ESD) and application of NWFET. This includes coverage of solar and memory cells, biological and chemical sensors, displays and atomic scale light emitting diodes. Appropriate for scientists and engineers interested in acquiring a working knowledge of NWFET as well as graduate students specializing in this subject.

  11. Machine learning of single molecule free energy surfaces and the impact of chemistry and environment upon structure and dynamics.

    Science.gov (United States)

    Mansbach, Rachael A; Ferguson, Andrew L

    2015-03-14

    The conformational states explored by polymers and proteins can be controlled by environmental conditions (e.g., temperature, pressure, and solvent) and molecular chemistry (e.g., molecular weight and side chain identity). We introduce an approach employing the diffusion map nonlinear machine learning technique to recover single molecule free energy landscapes from molecular simulations, quantify changes to the landscape as a function of external conditions and molecular chemistry, and relate these changes to modifications of molecular structure and dynamics. In an application to an n-eicosane chain, we quantify the thermally accessible chain configurations as a function of temperature and solvent conditions. In an application to a family of polyglutamate-derivative homopeptides, we quantify helical stability as a function of side chain length, resolve the critical side chain length for the helix-coil transition, and expose the molecular mechanisms underpinning side chain-mediated helix stability. By quantifying single molecule responses through perturbations to the underlying free energy surface, our approach provides a quantitative bridge between experimentally controllable variables and microscopic molecular behavior, guiding and informing rational engineering of desirable molecular structure and function.

  12. The Effect of Intelligence, Leg Muscle Strength, and Balance Towards The Learning Outcomes of Pencak Silat with Empty-Handed Single Artistic

    Directory of Open Access Journals (Sweden)

    Aridhotul Haqiyah

    2017-10-01

    Full Text Available This study aims to Determine the effect of intelligence, leg muscle strength, as well as the balance towards the learning outcomes of pencak silat empty-handed single artistic on the Physical Education students of Islamic University 45 Bekasi. The research method is a survey, and the analysis technique is path analysis. This research held in Islamic University 45 Bekasi with 122 people of population. The sampling technique used is random sampling, then a sample of this research is 60 people. The instruments used are a rubric 4 scale (very good, good, enough and less of the learning outcomes of pencak silat emptyhanded single artistic, intelligence test with IST (Intelligent Structure Test, leg muscle strength with instrument squat test, and test of balance by using the modified bass test of dynamic balance. Based the result of the data processing and analysis, the Conclusions are: : (1 Intelligence directly effect on the learningoutcomes of pencak silat empty-handed single artistic with ρy1  = 0.359, (2 Leg muscles strength directlyeffect on the learning outcomes of pencak silat empty-handed single artistic with ρy2 = 0.228, (3 Balance directly effect on the learning outcomes of pencak silat empty-handed single artistic with ρy3 = 0.356, (4 Intelligence directly effects on the balance with ρ31 = 0.662, and (5 Leg muscle strength directly effectson the balance with ρ32 = 0.298.

  13. BUSFET -- A radiation-hardened SOI transistor

    International Nuclear Information System (INIS)

    Schwank, J.R.; Shaneyfelt, M.R.; Draper, B.L.; Dodd, P.E.

    1999-01-01

    The total-dose hardness of SOI technology is limited by radiation-induced charge trapping in gate, field, and SOI buried oxides. Charge trapping in the buried oxide can lead to back-channel leakage and makes hardening SOI transistors more challenging than hardening bulk-silicon transistors. Two avenues for hardening the back-channel are (1) to use specially prepared SOI buried oxides that reduce the net amount of trapped positive charge or (2) to design transistors that are less sensitive to the effects of trapped charge in the buried oxide. In this work, the authors propose a partially-depleted SOI transistor structure for mitigating the effects of trapped charge in the buried oxide on radiation hardness. They call this structure the BUSFET--Body Under Source FET. The BUSFET utilizes a shallow source and a deep drain. As a result, the silicon depletion region at the back channel caused by radiation-induced charge trapping in the buried oxide does not form a conducting path between source and drain. Thus, the BUSFET structure design can significantly reduce radiation-induced back-channel leakage without using specially prepared buried oxides. Total dose hardness is achieved without degrading the intrinsic SEU or dose rate hardness of SOI technology. The effectiveness of the BUSFET structure for reducing total-dose back-channel leakage depends on several variables, including the top silicon film thickness and doping concentration, and the depth of the source. 3-D simulations show that for a body doping concentration of 10 18 cm -3 , a drain bias of 3 V, and a source depth of 90 nm, a silicon film thickness of 180 nm is sufficient to almost completely eliminate radiation-induced back-channel leakage. However, for a doping concentration of 3 x 10 17 cm -3 , a thicker silicon film (300 nm) must be used

  14. Planar graphene tunnel field-effect transistor

    OpenAIRE

    Katkov, V. L.; Osipov, V. A.

    2013-01-01

    We propose a concept for a graphene tunnel field-effect transistor. The main idea is based on the use of two graphene electrodes with zigzag termination divided by a narrow gap under the influence of the common gate. Our analysis shows that such device will have a pronounced switching effect at low gate voltage and high on/off current ratio at room temperature.

  15. Optical driven electromechanical transistor based on tunneling effect.

    Science.gov (United States)

    Jin, Leisheng; Li, Lijie

    2015-04-15

    A new electromechanical transistor based on an optical driven vibrational ring structure has been postulated. In the device, optical power excites the ring structure to vibrate, which acts as the shuttle transporting electrons from one electrode to the other forming the transistor. The electrical current of the transistor is adjusted by the optical power. Coupled opto-electro-mechanical simulation has been performed. It is shown from the dynamic analysis that the stable working range of the transistor is much wider than that of the optical wave inside the cavity, i.e., the optical resonance enters nonperiodic states while the mechanical vibration of the ring is still periodic.

  16. Integral optoelectronic switch based on DMOS-transistors

    Directory of Open Access Journals (Sweden)

    Politanskyy L. F.

    2008-12-01

    Full Text Available The characteristics of optoelectronic couples photodiodes-DMOS-transistor are studied in the paper. There was developed a mathematical model of volt-ampere characteristic of the given optoelectronic couple which allows to determine interrelation of its electric parameters with constructive and electrophysical parameters of photodiodes and DMOS-transistors. There was suggested a construction of integral optoelectronic switch, based on DMOS-transistors on the silicon with dielectric insulation structures (SDIS. Possible is the optic control of executive devices, connected both to the source and drain circuits of the switching transistor.

  17. Npn double heterostructure bipolar transistor with ingaasn base region

    Science.gov (United States)

    Chang, Ping-Chih; Baca, Albert G.; Li, Nein-Yi; Hou, Hong Q.; Ashby, Carol I. H.

    2004-07-20

    An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.

  18. A PWM transistor inverter for an ac electric vehicle drive

    Science.gov (United States)

    Slicker, J. M.

    1981-01-01

    A prototype system consisting of closely integrated motor, inverter, and transaxle has been built in order to demonstrate the feasibility of a three-phase ac transistorized inverter for electric vehicle applications. The microprocessor-controlled inverter employs monolithic power transistors to drive an oil-cooled, three-phase induction traction motor at a peak output power of 30 kW from a 144 V battery pack. Transistor safe switching requirements are discussed, and a circuit is presented for recovering trapped snubber inductor energy at transistor turn-off.

  19. Estimates of Single Sensor Error Statistics for the MODIS Matchup Database Using Machine Learning

    Science.gov (United States)

    Kumar, C.; Podesta, G. P.; Minnett, P. J.; Kilpatrick, K. A.

    2017-12-01

    Sea surface temperature (SST) is a fundamental quantity for understanding weather and climate dynamics. Although sensors aboard satellites provide global and repeated SST coverage, a characterization of SST precision and bias is necessary for determining the suitability of SST retrievals in various applications. Guidance on how to derive meaningful error estimates is still being developed. Previous methods estimated retrieval uncertainty based on geophysical factors, e.g. season or "wet" and "dry" atmospheres, but the discrete nature of these bins led to spatial discontinuities in SST maps. Recently, a new approach clustered retrievals based on the terms (excluding offset) in the statistical algorithm used to estimate SST. This approach resulted in over 600 clusters - too many to understand the geophysical conditions that influence retrieval error. Using MODIS and buoy SST matchups (2002 - 2016), we use machine learning algorithms (recursive and conditional trees, random forests) to gain insight into geophysical conditions leading to the different signs and magnitudes of MODIS SST residuals (satellite SSTs minus buoy SSTs). MODIS retrievals were first split into three categories: 0.4 C. These categories are heavily unbalanced, with residuals > 0.4 C being much less frequent. Performance of classification algorithms is affected by imbalance, thus we tested various rebalancing algorithms (oversampling, undersampling, combinations of the two). We consider multiple features for the decision tree algorithms: regressors from the MODIS SST algorithm, proxies for temperature deficit, and spatial homogeneity of brightness temperatures (BTs), e.g., the range of 11 μm BTs inside a 25 km2 area centered on the buoy location. These features and a rebalancing of classes led to an 81.9% accuracy when classifying SST retrievals into the BTs consistently appears as a very important variable for classification, suggesting that unidentified cloud contamination still is one of the

  20. The light at the end of the tunnel: a single-operator learning curve analysis for per oral endoscopic myotomy.

    Science.gov (United States)

    Patel, Kumkum Sarkar; Calixte, Rose; Modayil, Rani J; Friedel, David; Brathwaite, Collin E; Stavropoulos, Stavros N

    2015-05-01

    Per oral endoscopic myotomy (POEM) represents a natural orifice transluminal endoscopic surgery approach to Heller myotomy. Our center was the first to offer POEM outside of Japan, allowing us to accumulate what is likely the highest single-operator POEM volume in the United States. To define the POEM learning curve of a gastroenterologist by using a larger data set and more detailed statistical analysis than used in 2 other reports of POEM performed by surgeons. Prospective cohort study. Tertiary-care academic medical center. We analyzed the first 93 consecutive POEMs on patients with achalasia aged >18 years without contraindications to POEM performed by a single operator from October 2009 to November 2013. (1) Efficiency estimation via cumulative sum (CUSUM) analysis, (2) mastery estimation via penalized basis-spline regression and CUSUM analysis, (3) correlation of operator experience with clinical outcomes (Eckardt score improvement, lower esophageal sphincter pressure reduction) and technical errors (accidental mucosotomy rate), and (4) unadjusted and adjusted regression analysis to assess how patient characteristics affected procedure time by using a generalized linear model. Clinical outcomes, procedure time, technical errors. Efficiency was attained after 40 POEMs and mastery after 60 POEMs. When we used the adjusted regression analysis, only case number (operator experience) significantly affected procedure time (P myotomy, or type of knife used (all P > .05). Our analysis may underestimate the number of POEMs required to achieve mastery for operators with limited or no endoscopic submucosal dissection experience. These results offer thresholds for efficiency and mastery of a single gastroenterologist operator that may guide the efforts of novice POEM operators. Copyright © 2015 American Society for Gastrointestinal Endoscopy. Published by Elsevier Inc. All rights reserved.

  1. The effect of STDP temporal kernel structure on the learning dynamics of single excitatory and inhibitory synapses.

    Directory of Open Access Journals (Sweden)

    Yotam Luz

    Full Text Available Spike-Timing Dependent Plasticity (STDP is characterized by a wide range of temporal kernels. However, much of the theoretical work has focused on a specific kernel - the "temporally asymmetric Hebbian" learning rules. Previous studies linked excitatory STDP to positive feedback that can account for the emergence of response selectivity. Inhibitory plasticity was associated with negative feedback that can balance the excitatory and inhibitory inputs. Here we study the possible computational role of the temporal structure of the STDP. We represent the STDP as a superposition of two processes: potentiation and depression. This allows us to model a wide range of experimentally observed STDP kernels, from Hebbian to anti-Hebbian, by varying a single parameter. We investigate STDP dynamics of a single excitatory or inhibitory synapse in purely feed-forward architecture. We derive a mean-field-Fokker-Planck dynamics for the synaptic weight and analyze the effect of STDP structure on the fixed points of the mean field dynamics. We find a phase transition along the Hebbian to anti-Hebbian parameter from a phase that is characterized by a unimodal distribution of the synaptic weight, in which the STDP dynamics is governed by negative feedback, to a phase with positive feedback characterized by a bimodal distribution. The critical point of this transition depends on general properties of the STDP dynamics and not on the fine details. Namely, the dynamics is affected by the pre-post correlations only via a single number that quantifies its overlap with the STDP kernel. We find that by manipulating the STDP temporal kernel, negative feedback can be induced in excitatory synapses and positive feedback in inhibitory. Moreover, there is an exact symmetry between inhibitory and excitatory plasticity, i.e., for every STDP rule of inhibitory synapse there exists an STDP rule for excitatory synapse, such that their dynamics is identical.

  2. Heterojunction oxide thin-film transistors with unprecedented electron mobility grown from solution

    KAUST Repository

    Faber, Hendrik

    2017-04-28

    Thin-film transistors made of solution-processed metal oxide semiconductors hold great promise for application in the emerging sector of large-area electronics. However, further advancement of the technology is hindered by limitations associated with the extrinsic electron transport properties of the often defect-prone oxides. We overcome this limitation by replacing the single-layer semiconductor channel with a low-dimensional, solution-grown In2O3/ZnO heterojunction. We find that In2O3/ZnO transistors exhibit band-like electron transport, with mobility values significantly higher than single-layer In2O3 and ZnO devices by a factor of 2 to 100. This marked improvement is shown to originate from the presence of free electrons confined on the plane of the atomically sharp heterointerface induced by the large conduction band offset between In2O3 and ZnO. Our finding underscores engineering of solution-grown metal oxide heterointerfaces as an alternative strategy to thin-film transistor development and has the potential for widespread technological applications.

  3. Multiple logic functions from extended blockade region in a silicon quantum-dot transistor

    International Nuclear Information System (INIS)

    Lee, Youngmin; Lee, Sejoon; Im, Hyunsik; Hiramoto, Toshiro

    2015-01-01

    We demonstrate multiple logic-functions at room temperature on a unit device of the Si single electron transistor (SET). Owing to the formation of the multi-dot system, the device exhibits the enhanced Coulomb blockade characteristics (e.g., large peak-to-valley current ratio ∼200) that can improve the reliability of the SET-based logic circuits. The SET displays a unique feature useful for the logic applications; namely, the Coulomb oscillation peaks are systematically shifted by changing either of only the gate or the drain voltage. This enables the SET to act as a multi-functional one-transistor logic gate with AND, OR, NAND, and XOR functions

  4. Controlling field-effect mobility in pentacene-based transistors by supersonic molecular-beam deposition

    International Nuclear Information System (INIS)

    Toccoli, T.; Pallaoro, A.; Coppede, N.; Iannotta, S.; De Angelis, F.; Mariucci, L.; Fortunato, G.

    2006-01-01

    We show that pentacene field-effect transistors, fabricated by supersonic molecular beams, have a performance strongly depending on the precursor's kinetic energy (K E ). The major role played by K E is in achieving highly ordered and flat films. In the range K E ≅3.5-6.5 eV, the organic field effect transistor linear mobility increases of a factor ∼5. The highest value (1.0 cm 2 V -1 s -1 ) corresponds to very uniform and flat films (layer-by-layer type growth). The temperature dependence of mobility for films grown at K E >6 eV recalls that of single crystals (bandlike) and shows an opposite trend for films grown at K E ≤5.5 eV

  5. Integrating carbon nanotubes into silicon by means of vertical carbon nanotube field-effect transistors

    KAUST Repository

    Li, Jingqi

    2014-01-01

    Single-walled carbon nanotubes have been integrated into silicon for use in vertical carbon nanotube field-effect transistors (CNTFETs). A unique feature of these devices is that a silicon substrate and a metal contact are used as the source and drain for the vertical transistors, respectively. These CNTFETs show very different characteristics from those fabricated with two metal contacts. Surprisingly, the transfer characteristics of the vertical CNTFETs can be either ambipolar or unipolar (p-type or n-type) depending on the sign of the drain voltage. Furthermore, the p-type/n-type character of the devices is defined by the doping type of the silicon substrate used in the fabrication process. A semiclassical model is used to simulate the performance of these CNTFETs by taking the conductance change of the Si contact under the gate voltage into consideration. The calculation results are consistent with the experimental observations. This journal is © the Partner Organisations 2014.

  6. Toward Understanding the Role of Web 2.0 Technology in Self-Directed Learning and Job Performance in a Single Organizational Setting: A Qualitative Case Study

    Science.gov (United States)

    Caruso, Shirley J.

    2016-01-01

    This single instrumental qualitative case study explores and thickly describes job performance outcomes based upon the manner in which self-directed learning activities of a purposefully selected sample of 3 construction managers are conducted, mediated by the use of Web 2.0 technology. The data collected revealed that construction managers are…

  7. Selective Dirac voltage engineering of individual graphene field-effect transistors for digital inverter and frequency multiplier integrations.

    Science.gov (United States)

    Sul, Onejae; Kim, Kyumin; Jung, Yungwoo; Choi, Eunsuk; Lee, Seung-Beck

    2017-09-15

    The ambipolar band structure of graphene presents unique opportunities for novel electronic device applications. A cycle of gate voltage sweep in a conventional graphene transistor produces a frequency-doubled output current. To increase the frequency further, we used various graphene doping control techniques to produce Dirac voltage engineered graphene channels. The various surface treatments and substrate conditions produced differently doped graphene channels that were integrated on a single substrate and multiple Dirac voltages were observed by applying a single gate voltage sweep. We applied the Dirac voltage engineering techniques to graphene field-effect transistors on a single chip for the fabrication of a frequency multiplier and a logic inverter demonstrating analog and digital circuit application possibilities.

  8. The Smallest Transistor-Based Nonautonomous Chaotic Circuit

    DEFF Research Database (Denmark)

    Lindberg, Erik; Murali, K.; Tamasevicius, Arunas

    2005-01-01

    A nonautonomous chaotic circuit based on one transistor, two capacitors, and two resistors is described. The mechanism behind the chaotic performance is based on “disturbance of integration.” The forward part and the reverse part of the bipolar transistor are “fighting” about the charging...

  9. Advanced Organic Permeable-Base Transistor with Superior Performance.

    Science.gov (United States)

    Klinger, Markus P; Fischer, Axel; Kaschura, Felix; Scholz, Reinhard; Lüssem, Björn; Kheradmand-Boroujeni, Bahman; Ellinger, Frank; Kasemann, Daniel; Leo, Karl

    2015-12-16

    An optimized vertical organic permeable-base transistor (OPBT) competing with the best organic field-effect transistors in performance, while employing low-cost fabrication techniques, is presented. The OPBT stands out by its excellent power efficiency at the highest frequencies. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. On the 50th Anniversary of the Transistor

    DEFF Research Database (Denmark)

    Stassen, Flemming

    1997-01-01

    This paper celebrates the 50th anniversary of the invention of the bipolar transistor in 1947. Combined with the inventions of integration and planar technology, the invention of the transistor marks the beginning of a period of unprecedented growth, the industrialization of electronics....

  11. Very High Frequency Two-Port Characterization of Transistors

    DEFF Research Database (Denmark)

    Hertel, Jens Christian; Nour, Yasser; Jørgensen, Ivan Harald Holger

    To properly use transistors in VHF converters, they need to be characterized under similar conditions. This research presents a two-port method, using a network analyzer (NWA) with a S-port setup. The method is a one-shot method, providing fast results of the off-state parasitics of the transistors....

  12. High mobility polymer gated organic field effect transistor using zinc ...

    Indian Academy of Sciences (India)

    Organic semiconductor; field effect transistor; phthalocyanine; high mobility. Abstract. Organic thin film transistors were fabricated using evaporated zinc phthalocyanine as the active layer. Parylene film prepared by chemical vapour deposition was used as the organic gate insulator. The annealing of the samples was ...

  13. The Complete Semiconductor Transistor and Its Incomplete Forms

    Science.gov (United States)

    Binbin, Jie; Chih-Tang, Sah

    2009-06-01

    This paper describes the definition of the complete transistor. For semiconductor devices, the complete transistor is always bipolar, namely, its electrical characteristics contain both electron and hole currents controlled by their spatial charge distributions. Partially complete or incomplete transistors, via coined names or/and designed physical geometries, included the 1949 Shockley p/n junction transistor (later called Bipolar Junction Transistor, BJT), the 1952 Shockley unipolar 'field-effect' transistor (FET, later called the p/n Junction Gate FET or JGFET), as well as the field-effect transistors introduced by later investigators. Similarities between the surface-channel MOS-gate FET (MOSFET) and the volume-channel BJT are illustrated. The bipolar currents, identified by us in a recent nanometer FET with 2-MOS-gates on thin and nearly pure silicon base, led us to the recognition of the physical makeup and electrical current and charge compositions of a complete transistor and its extension to other three or more terminal signal processing devices, and also the importance of the terminal contacts.

  14. Single Electron Tunneling

    International Nuclear Information System (INIS)

    Ruggiero, Steven T.

    2005-01-01

    Financial support for this project has led to advances in the science of single-electron phenomena. Our group reported the first observation of the so-called ''Coulomb Staircase'', which was produced by tunneling into ultra-small metal particles. This work showed well-defined tunneling voltage steps of width e/C and height e/RC, demonstrating tunneling quantized on the single-electron level. This work was published in a now well-cited Physical Review Letter. Single-electron physics is now a major sub-field of condensed-matter physics, and fundamental work in the area continues to be conducted by tunneling in ultra-small metal particles. In addition, there are now single-electron transistors that add a controlling gate to modulate the charge on ultra-small photolithographically defined capacitive elements. Single-electron transistors are now at the heart of at least one experimental quantum-computer element, and single-electron transistor pumps may soon be used to define fundamental quantities such as the farad (capacitance) and the ampere (current). Novel computer technology based on single-electron quantum dots is also being developed. In related work, our group played the leading role in the explanation of experimental results observed during the initial phases of tunneling experiments with the high-temperature superconductors. When so-called ''multiple-gap'' tunneling was reported, the phenomenon was correctly identified by our group as single-electron tunneling in small grains in the material. The main focus throughout this project has been to explore single electron phenomena both in traditional tunneling formats of the type metal/insulator/particles/insulator/metal and using scanning tunneling microscopy to probe few-particle systems. This has been done under varying conditions of temperature, applied magnetic field, and with different materials systems. These have included metals, semi-metals, and superconductors. Amongst a number of results, we have

  15. Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane.

    Science.gov (United States)

    Zhu, Li Qiang; Wan, Chang Jin; Gao, Ping Qi; Liu, Yang Hui; Xiao, Hui; Ye, Ji Chun; Wan, Qing

    2016-08-24

    Ion-conducting materials have received considerable attention for their applications in fuel cells, electrochemical devices, and sensors. Here, flexible indium zinc oxide (InZnO) synaptic transistors with multiple presynaptic inputs gated by proton-conducting phosphorosilicate glass-based electrolyte films are fabricated on ultrathin Si membranes. Transient characteristics of the proton gated InZnO synaptic transistors are investigated, indicating stable proton-gating behaviors. Short-term synaptic plasticities are mimicked on the proposed proton-gated synaptic transistors. Furthermore, synaptic integration regulations are mimicked on the proposed synaptic transistor networks. Spiking logic modulations are realized based on the transition between superlinear and sublinear synaptic integration. The multigates coupled flexible proton-gated oxide synaptic transistors may be interesting for neuroinspired platforms with sophisticated spatiotemporal information processing.

  16. Diakoptical reliability analysis of transistorized systems

    International Nuclear Information System (INIS)

    Kontoleon, J.M.; Lynn, J.W.; Green, A.E.

    1975-01-01

    Limitations both on high-speed core availability and computation time required for assessing the reliability of large-sized and complex electronic systems, such as used for the protection of nuclear reactors, are very serious restrictions which continuously confront the reliability analyst. Diakoptic methods simplify the solution of the electrical-network problem by subdividing a given network into a number of independent subnetworks and then interconnecting the solutions of these smaller parts by a systematic process involving transformations based on connection-matrix elements associated with the interconnecting links. However, the interconnection process is very complicated and it may be used only if the original system has been cut in such a manner that a relation can be established between the constraints appearing at both sides of the cut. Also, in dealing with transistorized systems, one of the difficulties encountered is that of modelling adequately their performance under various operating conditions, since their parameters are strongly affected by the imposed voltage and current levels. In this paper a new interconnection approach is presented which may be of use in the reliability analysis of large-sized transistorized systems. This is based on the partial optimization of the subdivisions of the torn network as well as on the optimization of the torn paths. The solution of the subdivisions is based on the principles of algebraic topology, with an algebraic structure relating the physical variables in a topological structure which defines the interconnection of the discrete elements. Transistors, and other nonlinear devices, are modelled using their actual characteristics, under normal and abnormal operating conditions. Use of so-called k factors is made to facilitate accounting for use of electrical stresses. The approach is demonstrated by way of an example. (author)

  17. Intrinsic Charge Transport in Organic Field-Effect Transistors

    Science.gov (United States)

    Podzorov, Vitaly

    2005-03-01

    Organic field-effect transistors (OFETs) are essential components of modern electronics. Despite the rapid progress of organic electronics, understanding of fundamental aspects of the charge transport in organic devices is still lacking. Recently, the OFETs based on highly ordered organic crystals have been fabricated with innovative techniques that preserve the high quality of single-crystal organic surfaces. This technological progress facilitated the study of transport mechanisms in organic semiconductors [1-4]. It has been demonstrated that the intrinsic polaronic transport, not dominated by disorder, with a remarkably high mobility of ``holes'' μ = 20 cm^2/Vs can be achieved in these devices at room temperature [4]. The signatures of the intrinsic polaronic transport are the anisotropy of the carrier mobility and an increase of μ with cooling. These and other aspects of the charge transport in organic single-crystal FETs will be discussed. Co-authors are Etienne Menard, University of Illinois at Urbana Champaign; Valery Kiryukhin, Rutgers University; John Rogers, University of Illinois at Urbana Champaign; Michael Gershenson, Rutgers University. [1] V. Podzorov et al., Appl. Phys. Lett. 82, 1739 (2003); ibid. 83, 3504 (2003). [2] V. C. Sundar et al., Science 303, 1644 (2004). [3] R. W. I. de Boer et al., Phys. Stat. Sol. (a) 201, 1302 (2004). [4] V. Podzorov et al., Phys. Rev. Lett. 93, 086602 (2004).

  18. Functional organic field-effect transistors.

    Science.gov (United States)

    Guo, Yunlong; Yu, Gui; Liu, Yunqi

    2010-10-25

    Functional organic field-effect transistors (OFETs) have attracted increasing attention in the past few years due to their wide variety of potential applications. Research on functional OFETs underpins future advances in organic electronics. In this review, different types of functional OFETs including organic phototransistors, organic memory FETs, organic light emitting FETs, sensors based on OFETs and other functional OFETs are introduced. In order to provide a comprehensive overview of this field, the history, current status of research, main challenges and prospects for functional OFETs are all discussed.

  19. Hafnium transistor process design for neural interfacing.

    Science.gov (United States)

    Parent, David W; Basham, Eric J

    2009-01-01

    A design methodology is presented that uses 1-D process simulations of Metal Insulator Semiconductor (MIS) structures to design the threshold voltage of hafnium oxide based transistors used for neural recording. The methodology is comprised of 1-D analytical equations for threshold voltage specification, and doping profiles, and 1-D MIS Technical Computer Aided Design (TCAD) to design a process to implement a specific threshold voltage, which minimized simulation time. The process was then verified with a 2-D process/electrical TCAD simulation. Hafnium oxide films (HfO) were grown and characterized for dielectric constant and fixed oxide charge for various annealing temperatures, two important design variables in threshold voltage design.

  20. Dose Rate Effects in Linear Bipolar Transistors

    Science.gov (United States)

    Johnston, Allan; Swimm, Randall; Harris, R. D.; Thorbourn, Dennis

    2011-01-01

    Dose rate effects are examined in linear bipolar transistors at high and low dose rates. At high dose rates, approximately 50% of the damage anneals at room temperature, even though these devices exhibit enhanced damage at low dose rate. The unexpected recovery of a significant fraction of the damage after tests at high dose rate requires changes in existing test standards. Tests at low temperature with a one-second radiation pulse width show that damage continues to increase for more than 3000 seconds afterward, consistent with predictions of the CTRW model for oxides with a thickness of 700 nm.

  1. Radiation strength of magnetosensitive silicon transistors

    Science.gov (United States)

    Vikulin, I. M.; Glauberman, M. A.; Kanishcheva, N. A.; Kozel, V. V.; Prokhorov, V. A.

    1985-06-01

    The effects of penetrating radiation on the magnetosensitivity of transistors exposed to fast electrons and gamma radiation from a Co-60 source are experimentally studied. The results indicate that double-collector magnetotransistors are quite resistant to radiation, and that their magnetosensitivity can be enhanced by exposing them to appropriate amounts of electron or gamma radiation. It is shown that the sensitivity depends on the properties of the material (in particular, the carrier lifetime) and on the change in the effective length of the base and the redistribution of the emitter-injected carriers between the collectors in the presence of an external magnetic field.

  2. Tunable SnSe2/WSe2Heterostructure Tunneling Field Effect Transistor.

    Science.gov (United States)

    Yan, Xiao; Liu, Chunsen; Li, Chao; Bao, Wenzhong; Ding, Shijin; Zhang, David Wei; Zhou, Peng

    2017-09-01

    The burgeoning 2D semiconductors can maintain excellent device electrostatics with an ultranarrow channel length and can realize tunneling by electrostatic gating to avoid deprivation of band-edge sharpness resulting from chemical doping, which make them perfect candidates for tunneling field effect transistors. Here this study presents SnSe 2 /WSe 2 van der Waals heterostructures with SnSe 2 as the p-layer and WSe 2 as the n-layer. The energy band alignment changes from a staggered gap band offset (type-II) to a broken gap (type-III) when changing the negative back-gate voltage to positive, resulting in the device operating as a rectifier diode (rectification ratio ~10 4 ) or an n-type tunneling field effect transistor, respectively. A steep average subthreshold swing of 80 mV dec -1 for exceeding two decades of drain current with a minimum of 37 mV dec -1 at room temperature is observed, and an evident trend toward negative differential resistance is also accomplished for the tunneling field effect transistor due to the high gate efficiency of 0.36 for single gate devices. The I ON /I OFF ratio of the transfer characteristics is >10 6 , accompanying a high ON current >10 -5 A. This work presents original phenomena of multilayer 2D van der Waals heterostructures which can be applied to low-power consumption devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Regulating charge injection in ambipolar organic field-effect transistors by mixed self-assembled monolayers.

    Science.gov (United States)

    Xu, Yong; Baeg, Kang-Jun; Park, Won-Tae; Cho, Ara; Choi, Eun-Young; Noh, Yong-Young

    2014-08-27

    We report on a technique using mixed self-assembled monolayers (SAMs) to finely regulate ambipolar charge injection in polymer organic field-effect transistors. Differing from the other works that employ single SAM specifically for efficient charge injection in p-type and n-type transistors, we blend two different SAMs of alkyl- and perfluoroalkyl thiols at different ratios and apply them to ambipolar OFETs and inverter. Thanks to the utilization of ambipolar semiconductor and one SAM mixture, the device and circuit fabrications are facile with only one step for semiconductor deposition and another for SAM treatment. This is much simpler with respect to the conventional scheme for the unipolar-device-based complementary circuitry that demands separate deposition and processing for individual p-channel and n-channel transistors. Our results show that the mixed-SAM treatments not only improve ambipolar charge injection manifesting as higher hole- and electron-mobility and smaller threshold voltage but also gradually tune the device characteristics to reach a desired condition for circuit application. Therefore, this simple but useful approach is promising for ambipolar electronics.

  4. Effects of Single Compared to Dual Task Practice on Learning a Dynamic Balance Task in Young Adults

    Directory of Open Access Journals (Sweden)

    Rainer Kiss

    2018-03-01

    Full Text Available Background: In everyday life, people engage in situations involving the concurrent processing of motor (balance and cognitive tasks (i.e., “dual task situations” that result in performance declines in at least one of the given tasks. The concurrent practice of both the motor and cognitive task may counteract these performance decrements. The purpose of this study was to examine the effects of single task (ST compared to dual task (DT practice on learning a dynamic balance task.Methods: Forty-eight young adults were randomly assigned to either a ST (i.e., motor or cognitive task training only or a DT (i.e., motor-cognitive training practice condition. The motor task required participants to stand on a platform and keeping the platform as close to horizontal as possible. In the cognitive task, participants were asked to recite serial subtractions of three. For 2 days, participants of the ST groups practiced the motor or cognitive task only, while the participants of the DT group concurrently performed both. Root-mean-square error (RMSE for the motor and total number of correct calculations for the cognitive task were computed.Results: During practice, all groups improved their respective balance and/or cognitive task performance. With regard to the assessment of learning on day 3, we found significantly smaller RMSE values for the ST motor (d = 1.31 and the DT motor-cognitive (d = 0.76 practice group compared to the ST cognitive practice group but not between the ST motor and the DT motor-cognitive practice group under DT test condition. Further, we detected significantly larger total numbers of correct calculations under DT test condition for the ST cognitive (d = 2.19 and the DT motor-cognitive (d = 1.55 practice group compared to the ST motor practice group but not between the ST cognitive and the DT motor-cognitive practice group.Conclusion: We conclude that ST practice resulted in an effective modulation of the trained domain (i.e., motor

  5. Stable organic thin-film transistors

    Science.gov (United States)

    Jia, Xiaojia; Fuentes-Hernandez, Canek; Wang, Cheng-Yin; Park, Youngrak; Kippelen, Bernard

    2018-01-01

    Organic thin-film transistors (OTFTs) can be fabricated at moderate temperatures and through cost-effective solution-based processes on a wide range of low-cost flexible and deformable substrates. Although the charge mobility of state-of-the-art OTFTs is superior to that of amorphous silicon and approaches that of amorphous oxide thin-film transistors (TFTs), their operational stability generally remains inferior and a point of concern for their commercial deployment. We report on an exhaustive characterization of OTFTs with an ultrathin bilayer gate dielectric comprising the amorphous fluoropolymer CYTOP and an Al2O3:HfO2 nanolaminate. Threshold voltage shifts measured at room temperature over time periods up to 5.9 × 105 s do not vary monotonically and remain below 0.2 V in microcrystalline OTFTs (μc-OTFTs) with field-effect carrier mobility values up to 1.6 cm2 V−1 s−1. Modeling of these shifts as a function of time with a double stretched-exponential (DSE) function suggests that two compensating aging mechanisms are at play and responsible for this high stability. The measured threshold voltage shifts at temperatures up to 75°C represent at least a one-order-of-magnitude improvement in the operational stability over previous reports, bringing OTFT technologies to a performance level comparable to that reported in the scientific literature for other commercial TFTs technologies. PMID:29340301

  6. Transistors and tunnel diodes enabled by large-scale MoS2 nanosheets grown on GaN

    Science.gov (United States)

    San Yip, Pak; Zou, Xinbo; Cho, Wai Ching; Wu, Kam Lam; Lau, Kei May

    2017-07-01

    We report growth, fabrication, and device results of MoS2-based transistors and diodes implemented on a single 2D/3D material platform. The 2D/3D platform consists of a large-area MoS2 thin film grown on SiO2/p-GaN substrates. Atomic force microscopy, scanning electron microscopy, and Raman spectroscopy were used to characterize the thickness and quality of the as-grown MoS2 film, showing that the large-area MoS2 nanosheet has a smooth surface morphology constituted by small grains. Starting from the same material, both top-gated MoS2 field effect transistors and MoS2/SiO2/p-GaN heterojunction diodes were fabricated. The transistors exhibited a high on/off ratio of 105, a subthreshold swing of 74 mV dec-1, field effect mobility of 0.17 cm2 V-1 s-1, and distinctive current saturation characteristics. For the heterojunction diodes, current-rectifying characteristics were demonstrated with on-state current density of 29 A cm-2 and a current blocking property up to -25 V without breakdown. The reported transistors and diodes enabled by the same 2D/3D material stack present promising building blocks for constructing future nanoscale electronics.

  7. High Electron Mobility Thin-Film Transistors Based on Solution-Processed Semiconducting Metal Oxide Heterojunctions and Quasi-Superlattices

    KAUST Repository

    Lin, Yen-Hung

    2015-05-26

    High mobility thin-film transistor technologies that can be implemented using simple and inexpensive fabrication methods are in great demand because of their applicability in a wide range of emerging optoelectronics. Here, a novel concept of thin-film transistors is reported that exploits the enhanced electron transport properties of low-dimensional polycrystalline heterojunctions and quasi-superlattices (QSLs) consisting of alternating layers of In2O3, Ga2O3, and ZnO grown by sequential spin casting of different precursors in air at low temperatures (180–200 °C). Optimized prototype QSL transistors exhibit band-like transport with electron mobilities approximately a tenfold greater (25–45 cm2 V−1 s−1) than single oxide devices (typically 2–5 cm2 V−1 s−1). Based on temperature-dependent electron transport and capacitance-voltage measurements, it is argued that the enhanced performance arises from the presence of quasi 2D electron gas-like systems formed at the carefully engineered oxide heterointerfaces. The QSL transistor concept proposed here can in principle extend to a range of other oxide material systems and deposition methods (sputtering, atomic layer deposition, spray pyrolysis, roll-to-roll, etc.) and can be seen as an extremely promising technology for application in next-generation large area optoelectronics such as ultrahigh definition optical displays and large-area microelectronics where high performance is a key requirement.

  8. Laparoendoscopic single-site surgery for the treatment of different urological pathologies: Defining the learning curve of an experienced laparoscopist.

    Science.gov (United States)

    Abdel-Karim, Aly M; Elhenawy, Ibrahim M; Eid, Ahmed A; Yahia, Elsayed; Elsalmy, Salah A

    2017-09-01

    To define the learning curve of laparoendoscopic single-site surgery (LESS) of an experienced laparoscopist. Patients who had LESS, since its implementation in December 2009 until December 2014, were retrospectively analysed. Procedures were divided into groups of 10 and scored according to the European Scoring System for Laparoscopic Operations in Urology. Different LESS indications were done by one experienced laparoscopist. Technical feasibility, surgical safety, outcome, as well as the number of patients required to achieve professional competence were assessed. In all, 179 patients were included, with mean (SD) age of 36.3 (17.5) years and 25.4% of the patients had had previous surgeries. Upper urinary tract procedures were done in 65.9% of patients and 54.7% of the procedures were extirpative. Both transperitoneal and retroperitoneal LESS were performed in 92.8% and 7.2% of the patients, respectively. The intraoperative and postoperative complication rates were 2.2% and 5.6% (Clavien-Dindo Grade II 3.9% and IIIa 1.7%), respectively. In all, 75% of intraoperative complications and all conversions were reported during the first 30 LESS procedures; despite the significantly higher difficulty score in the subsequent LESS procedures. One 5-mm extra port, conversion to conventional laparoscopy and open surgery was reported in 14%, 1.7%, and 1.1% of the cases, respectively. At mean (SD) follow-up of 39.7 (11.4) months, all the patients that underwent reconstructive LESS procedures but one were successful. In experienced hands, at least 30 LESS procedures are required to achieve professional competence. Although difficult, both conversion and complication rates of LESS are low in experienced hands.

  9. Single-event upset and snapback in silicon-on-insulator devices

    International Nuclear Information System (INIS)

    Dodd, Paul E.; Shaneyfelt, Marty R.; Schwank, James R.; Hash, Gerald L.; Draper, Bruce L.; Winokur, Peter S.

    2000-01-01

    SEU is studied in SOI transistors and circuits with various body tie structures. The importance of impact ionization effects, including single-event snapback, is explored. Implications for hardness assurance testing of SOI integrated circuits are discussed

  10. Organic semiconductors for organic field-effect transistors

    Directory of Open Access Journals (Sweden)

    Yoshiro Yamashita

    2009-01-01

    Full Text Available The advantages of organic field-effect transistors (OFETs, such as low cost, flexibility and large-area fabrication, have recently attracted much attention due to their electronic applications. Practical transistors require high mobility, large on/off ratio, low threshold voltage and high stability. Development of new organic semiconductors is key to achieving these parameters. Recently, organic semiconductors have been synthesized showing comparable mobilities to amorphous-silicon-based FETs. These materials make OFETs more attractive and their applications have been attempted. New organic semiconductors resulting in high-performance FET devices are described here and the relationship between transistor characteristics and chemical structure is discussed.

  11. GaN transistors for efficient power conversion

    CERN Document Server

    Lidow, Alex; de Rooij, Michael; Reusch, David

    2014-01-01

    The first edition of GaN Transistors for Efficient Power Conversion was self-published by EPC in 2012, and is currently the only other book to discuss GaN transistor technology and specific applications for the technology. More than 1,200 copies of the first edition have been sold through Amazon or distributed to selected university professors, students and potential customers, and a simplified Chinese translation is also available. The second edition has expanded emphasis on applications for GaN transistors and design considerations. This textbook provides technical and application-focused i

  12. Toward complementary ionic circuits: the npn ion bipolar junction transistor.

    Science.gov (United States)

    Tybrandt, Klas; Gabrielsson, Erik O; Berggren, Magnus

    2011-07-06

    Many biomolecules are charged and may therefore be transported with ionic currents. As a step toward addressable ionic delivery circuits, we report on the development of a npn ion bipolar junction transistor (npn-IBJT) as an active control element of anionic currents in general, and specifically, demonstrate actively modulated delivery of the neurotransmitter glutamic acid. The functional materials of this transistor are ion exchange layers and conjugated polymers. The npn-IBJT shows stable transistor characteristics over extensive time of operation and ion current switch times below 10 s. Our results promise complementary chemical circuits similar to the electronic equivalence, which has proven invaluable in conventional electronic applications.

  13. A gallium phosphide high-temperature bipolar junction transistor

    Science.gov (United States)

    Zipperian, T. E.; Dawson, L. R.; Chaffin, R. J.

    1981-01-01

    Preliminary results are reported on the development of a high temperature (350 C) gallium phosphide bipolar junction transistor (BJT) for geothermal and other energy applications. This four-layer p(+)n(-)pp(+) structure was formed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The initial design suffers from a series resistance problem which limits the transistor's usefulness at high temperatures.

  14. Modeling of Transistor's Tracking Behavior in Compact Models

    Directory of Open Access Journals (Sweden)

    Ning Lu

    2011-01-01

    Full Text Available We present a novel method to model the tracking behavior of semiconductor transistors undergoing across-chip variations in a compact Monte Carlo model for SPICE simulations and show an enablement of simultaneous (−1/2 tracking relations among transistors on a chip at any poly density, any gate pitch, and any physical location for the first time. At smaller separations, our modeled tracking relation versus physical location reduces to Pelgrom's characterization on device's distance-dependent mismatch. Our method is very compact, since we do not use a matrix or a set of eigen solutions to represent correlations among transistors.

  15. Pressure Sensitive Insulated Gate Field Effect Transistor

    Science.gov (United States)

    Suminto, James Tjan-Meng

    A pressure sensitive insulated gate field effect transistor has been developed. The device is an elevated gate field-effect-transistor. It consists of a p-type silicon substrate in which two n^+ region, the source and drain, are formed. The gate electrode is a metal film sandwiched in an insulated micro-diaphragm resembling a pill-box which covers the gate oxide, drain, and source. The space between the gate electrode and the oxide is vacuum or an air-gap. When pressure is applied on the diaphragm it deflects and causes a change in the gate capacitance, and thus modulates the conductance of the channel between source and drain. A general theory dealing with the characteristic of this pressure sensitive insulated gate field effect transistor has been derived, and the device fabricated. The fabrication process utilizes the standard integrated circuit fabrication method. It features a batch fabrication of field effect devices followed by the batch fabrication of the deposited diaphragm on top of each field effect device. The keys steps of the diaphragm fabrication are the formation of spacer layer, formation of the diaphragm layer, and the subsequent removal of the spacer layer. The chip size of the device is 600 μm x 1050 mum. The diaphragm size is 200 μm x 200 mum. Characterization of the device has been performed. The current-voltage characteristics with pressure as parameters have been demonstrated and the current-pressure transfer curves obtained. They show non-linear characteristics as those of conventional capacitive pressure sensors. The linearity of threshold voltage versus pressure transfer curves has been demonstrated. The temperature effect on the device performances has been tested. The temperature coefficient of threshold voltage, rather than the electron mobility, has dominated the temperature coefficient of the device. Two temperature compensation schemes have been tested: one method is by connecting two identical PSIGFET in a differential amplifier

  16. Direct coupled amplifiers using field effect transistors

    International Nuclear Information System (INIS)

    Fowler, E.P.

    1964-03-01

    The concept of the uni-polar field effect transistor (P.E.T.) was known before the invention of the bi-polar transistor but it is only recently that they have been made commercially. Being produced as yet only in small quantities, their price imposes a restriction on use to circuits where their peculiar properties can be exploited to the full. One such application is described here where the combination of low voltage drift and relatively low input leakage current are necessarily used together. One of the instruments used to control nuclear reactors has a logarithmic response to the mean output current from a polarised ionisation chamber. The logarithmic signal is then differentiated electrically, the result being displayed on a meter calibrated to show the reactor divergence or doubling time. If displayed in doubling time the scale is calibrated reciprocally. Because of the wide range obtained in the logarithmic section and the limited supply voltage, an output of 1 volt per decade change in ionisation current is used. Differentiating this gives a current of 1.5 x 10 -8 A for p.s.D. (20 sec. doubling time) in the differentiating amplifier. To overcome some of the problems of noise due to statistical variations in input current, the circuit design necessitates a resistive path to ground at the amplifier input of 20 M.ohms. A schematic diagram is shown. 1. It is evident that a zero drift of 1% can be caused by a leakage current of 1.5 x 10 -10 A or an offset voltage of 3 mV at the amplifier input. Although the presently used electrometer valve is satisfactory from the point of view of grid current, there have been sudden changes in grid to grid voltage (the valve is a double triode) of up to 10 m.V. It has been found that a pair of F.E.T's. can be used to replace the electrometer valve so long as care is taken in correct balance of the two devices. An investigation has been made into the characteristics of some fourteen devices to see whether those with very

  17. Transparent thin-film transistor exploratory development via sequential layer deposition and thermal annealing

    International Nuclear Information System (INIS)

    Hong, David; Chiang, Hai Q.; Presley, Rick E.; Dehuff, Nicole L.; Bender, Jeffrey P.; Park, Cheol-Hee; Wager, John F.; Keszler, Douglas A.

    2006-01-01

    A novel deposition methodology is employed for exploratory development of a class of high-performance transparent thin-film transistor (TTFT) channel materials involving oxides composed of heavy-metal cations with (n - 1)d 10 ns 0 (n ≥ 4) electronic configurations. The method involves sequential radio-frequency sputter deposition of thin, single cation oxide layers and subsequent post-deposition annealing in order to obtain a multi-component oxide thin film. The viability of this rapid materials development methodology is demonstrated through the realization of high-performance TTFTs with channel layers composed of zinc oxide/tin oxide, and tin oxide/indium oxide

  18. Laser Pulse Tests of Bipolar Junction Transistors (BJTs) for SET Analysis

    Science.gov (United States)

    Daniel, C.; Plettner, C.; Poivey, C.; Schuttauf, A.; Tonicello, F.; Triggianese, M.

    2014-08-01

    In order to study the Single Event Transient (SET) sensitivity of discrete bipolar junction transistors, laser tests conducted at EADS Innovation Works in Sureness are presented and discussed. A number of different BJT samples have been tested in different operating conditions. The tests demonstrate that: discrete BJTs are indeed sensitive to collected charge; the most sensitive region is the collector/base junctions and that the different internal structure gives different SET shapes. We present measurements, simulation and comparison for SET modeled in PSPICE and tested with a laser.

  19. A single nano cantilever as a reprogrammable universal logic gate

    International Nuclear Information System (INIS)

    Chappanda, K N; Ilyas, S; Kazmi, S N R; Younis, M I; Holguin-Lerma, J; Batra, N M; Costa, P M F J

    2017-01-01

    The current transistor-based computing circuits use multiple interconnected transistors to realize a single Boolean logic gate. This leads to higher power requirements and delayed computing. Transistors are not suitable for applications in harsh environments and require complicated thermal management systems due to excessive heat dissipation. Also, transistor circuits lack the ability to dynamically reconfigure their functionality in real time, which is desirable for enhanced computing capability. Further, the miniaturization of transistors to improve computational power is reaching its ultimate physical limits. As a step towards overcoming the limitations of transistor-based computing, here we demonstrate a reprogrammable universal Boolean logic gate based on a nanoelectromechanical cantilever (NC) oscillator. The fundamental XOR, AND, NOR, OR and NOT logic gates are condensed in a single NC, thereby reducing electrical interconnects between devices. The device is dynamically switchable between any logic gates at the same drive frequency without the need for any change in the circuit. It is demonstrated to operate at elevated temperatures minimizing the need for thermal management systems. It has a tunable bandwidth of 5 MHz enabling parallel and dynamically reconfigurable logic device for enhanced computing. (paper)

  20. A single nano cantilever as a reprogrammable universal logic gate

    KAUST Repository

    Chappanda, K. N.

    2017-02-24

    The current transistor-based computing circuits use multiple interconnected transistors to realize a single Boolean logic gate. This leads to higher power requirements and delayed computing. Transistors are not suitable for applications in harsh environments and require complicated thermal management systems due to excessive heat dissipation. Also, transistor circuits lack the ability to dynamically reconfigure their functionality in real time, which is desirable for enhanced computing capability. Further, the miniaturization of transistors to improve computational power is reaching its ultimate physical limits. As a step towards overcoming the limitations of transistor-based computing, here we demonstrate a reprogrammable universal Boolean logic gate based on a nanoelectromechanical cantilever (NC) oscillator. The fundamental XOR, AND, NOR, OR and NOT logic gates are condensed in a single NC, thereby reducing electrical interconnects between devices. The device is dynamically switchable between any logic gates at the same drive frequency without the need for any change in the circuit. It is demonstrated to operate at elevated temperatures minimizing the need for thermal management systems. It has a tunable bandwidth of 5 MHz enabling parallel and dynamically reconfigurable logic device for enhanced computing.

  1. Magnon transistor for all-magnon data processing

    Science.gov (United States)

    Chumak, Andrii V.; Serga, Alexander A.; Hillebrands, Burkard

    2014-01-01

    An attractive direction in next-generation information processing is the development of systems employing particles or quasiparticles other than electrons—ideally with low dissipation—as information carriers. One such candidate is the magnon: the quasiparticle associated with the eigen-excitations of magnetic materials known as spin waves. The realization of single-chip all-magnon information systems demands the development of circuits in which magnon currents can be manipulated by magnons themselves. Using a magnonic crystal—an artificial magnetic material—to enhance nonlinear magnon–magnon interactions, we have succeeded in the realization of magnon-by-magnon control, and the development of a magnon transistor. We present a proof of concept three-terminal device fabricated from an electrically insulating magnetic material. We demonstrate that the density of magnons flowing from the transistor’s source to its drain can be decreased three orders of magnitude by the injection of magnons into the transistor’s gate. PMID:25144479

  2. Tunnel field-effect transistor with two gated intrinsic regions

    Directory of Open Access Journals (Sweden)

    Y. Zhang

    2014-07-01

    Full Text Available In this paper, we propose and validate (using simulations a novel design of silicon tunnel field-effect transistor (TFET, based on a reverse-biased p+-p-n-n+ structure. 2D device simulation results show that our devices have significant improvements of switching performance compared with more conventional devices based on p-i-n structure. With independent gate voltages applied to two gated intrinsic regions, band-to-band tunneling (BTBT could take place at the p-n junction, and no abrupt degenerate doping profile is required. We developed single-side-gate (SSG structure and double-side-gate (DSG structure. SSG devices with HfO2 gate dielectric have a point subthreshold swing of 9.58 mV/decade, while DSG devices with polysilicon gate electrode material and HfO2 gate dielectric have a point subthreshold swing of 16.39 mV/decade. These DSG devices have ON-current of 0.255 μA/μm, while that is lower for SSG devices. Having two nano-scale independent gates will be quite challenging to realize with good uniformity across the wafer and the improved behavior of our TFET makes it a promising steep-slope switch candidate for further investigations.

  3. Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length

    OpenAIRE

    Tomioka, Katsuhiro; Fukui, Takashi

    2014-01-01

    We report on a fabrication of tunnel field-effect transistors using InGaAs nanowire/Si heterojunctions and the characterization of scaling of channel lengths. The devices consisted of single InGaAs nanowires with a diameter of 30 nm grown on p-type Si(111) substrates. The switch demonstrated steep subthreshold-slope (30 mV/decade) at drain-source voltage (V-DS) of 0.10 V. Also, pinch-off behavior appeared at moderately low VDS, below 0.10 V. Reducing the channel length of the transistors atta...

  4. Nonvolatile Polycrystalline-Silicon Thin-Film-Transistor Silicon-Oxide-Nitride-Oxide-Silicon Memory with Periodical Finlike Channels Fabricated Using Nanoimprint Technology

    Science.gov (United States)

    Chen, Henry J. H.; Huang, Chien-Jen

    2013-02-01

    This work addresses the characteristics of a nonvolatile polycrystalline-silicon thin-film-transistor silicon-oxide-nitride-oxide-silicon (SONOS) memory with periodical finlike channels fabricated using nanoimprint lithography. The polycrystalline silicon periodical finlike channels were fabricated using ultraviolet (UV) nano-imprint lithography and studied by transmission electron microscopy (TEM). The memories with periodical finlike channels have lower operation voltage, higher programming speed, larger memory window, and better endurance and data retention than those with a single channel. The proposed approach can be utilized to fabricate a high-performance thin-film-transistor memory at a low cost.

  5. Abdominal Massage for the Treatment of Idiopathic Constipation in Children with Profound Learning Disabilities: A Single Case Study Design

    Science.gov (United States)

    Moss, Lucy; Smith, Melanie; Wharton, Sarah; Hames, Annette

    2008-01-01

    Chronic constipation is a common problem in people with learning disabilities. Treatment often involves dietary changes or long-term laxative use. The participants were five children with profound learning disabilities and additional physical difficulties. Their long-standing idiopathic constipation was managed by laxatives. Intervention lasted up…

  6. A Bilingual Child Learns Social Communication Skills through Video Modeling--A Single Case Study in a Norwegian School Setting

    Science.gov (United States)

    Özerk, Meral; Özerk, Kamil

    2015-01-01

    "Video modeling" is one of the recognized methods used in the training and teaching of children with Autism Spectrum Disorders (ASD). The model's theoretical base stems from Albert Bandura's (1977; 1986) social learning theory in which he asserts that children can learn many skills and behaviors observationally through modeling. One can…

  7. Modelling, development and optimization of integrated power LDMOS transistor. Performance limits in terms of energy; Modelisation, conception et optimisation de composant de puissance lateral DMOS integre. Etude des limites de performance en energie

    Energy Technology Data Exchange (ETDEWEB)

    Farenc, D.

    1997-12-16

    Technologies for Smart Power Integrated Circuits combine into a single chip Bipolar and CMOS transistors, plus power with lateral or vertical DMOS transistors. Complexity which has been increasing dramatically since the mid-80`s has allowed to integrate, into a single monolithic solution, entire systems. This thesis deals with the modelling, conception and test of the power integrated LDMOS transistor. The power LDMOS transistor is used as a switching device. It is characterized by two parameters which are the Specific On-resistance R{sub sp} and the breakdown voltage BV{sub DSS}. The LDMOS transistor developed for the new Smart Power technology exhibits a Specific On-resistance of 200 m{Omega}{sup *}mm{sup 2} and a breakdown voltage of 60 V. This device is dedicated to automotive applications. A reduction of the power device which is achieved with a low Specific On-resistance puts forward new issues such as the maximum Energy capability. When the power device is switched-off on an inductive load, a certain amount of energy is dissipated; if it is beyond a certain limit, the device is destroyed. Our goal is to determine the energy limits which are associated with our new Power integrated LDMOS transistor. (author) 28 refs.

  8. Giant electron-hole transport asymmetry in ultra-short quantum transistors

    Science.gov (United States)

    McRae, A. C.; Tayari, V.; Porter, J. M.; Champagne, A. R.

    2017-05-01

    Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e-h charging energy asymmetry). We parameterize the e-h transport asymmetry by the ratio of the hole and electron charging energies ηe-h. This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, ηe-h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV.

  9. Printed Thin Film Transistors: Research from China.

    Science.gov (United States)

    Tong, Sichao; Sun, Jia; Yang, Junliang

    2018-03-01

    Thin film transistors (TFTs) have experienced tremendous development during the past decades and show great potential applications in flat displays, sensors, radio frequency identification tags, logic circuit, and so on. The printed TFTs are the key components for rapid development and commercialization of printed electronics. The researchers in China play important roles to accelerate the development and commercialization of printed TFTs. In this review, we comprehensively summarize the research progress of printed TFTs on rigid and flexible substrates from China. The review will focus on printing techniques of TFTs, printed TFTs components including semiconductors, dielectrics and electrodes, as well as fully-printed TFTs and printed flexible TFTs. Furthermore, perspectives on the remaining challenges and future developments are proposed as well.

  10. Antiferromagnetic Spin Wave Field-Effect Transistor

    Science.gov (United States)

    Cheng, Ran; Daniels, Matthew W.; Zhu, Jian-Gang; Xiao, Di

    2016-01-01

    In a collinear antiferromagnet with easy-axis anisotropy, symmetry dictates that the spin wave modes must be doubly degenerate. Theses two modes, distinguished by their opposite polarization and available only in antiferromagnets, give rise to a novel degree of freedom to encode and process information. We show that the spin wave polarization can be manipulated by an electric field induced Dzyaloshinskii-Moriya interaction and magnetic anisotropy. We propose a prototype spin wave field-effect transistor which realizes a gate-tunable magnonic analog of the Faraday effect, and demonstrate its application in THz signal modulation. Our findings open up the exciting possibility of digital data processing utilizing antiferromagnetic spin waves and enable the direct projection of optical computing concepts onto the mesoscopic scale. PMID:27048928

  11. Modeling quantization effects in field effect transistors

    CERN Document Server

    Troger, C

    2001-01-01

    Numerical simulation in the field of semiconductor device development advanced to a valuable, cost-effective and flexible facility. The most widely used simulators are based on classical models, as they need to satisfy time and memory constraints. To improve the performance of field effect transistors such as MOSFETs and HEMTs these devices are continuously scaled down in their dimensions. Consequently the characteristics of such devices are getting more and more determined by quantum mechanical effects arising from strong transversal fields in the channel. In this work an approach based on a two-dimensional electron gas is used to describe the confinement of the carriers. Quantization is considered in one direction only. For the derivation of a one-dimensional Schroedinger equation in the effective mass framework a non-parabolic correction for the energy dispersion due to Kane is included. For each subband a non-parabolic dispersion relation characterized by subband masses and subband non-parabolicity coeffi...

  12. Transistorized pulse amplifiers (A.I.T.)

    International Nuclear Information System (INIS)

    Feyt, J.; Couly, J.P.

    1962-01-01

    The two amplifiers whose design and operation are described in this report have been studied for neutron detection units used in piles. They are designed to allow an important reduction of the volume and of the weight of the detector and its amplifier, and to simplify the operation of the detection assembly. To these characteristics can be added the mechanical and electrical robustness and the very reduced micro-phony. The first transistorized amplifier (AIT.1) is simple, very robust, and can be used for radioprotection installations. The second (AIT.4) has a better performance and makes it possible to replace the APT.2 in most of its applications (it has even been used satisfactorily in an apparatus where the micro-phony and the sensitivity to interference of the APT.2 made this latter unusable). (author) [fr

  13. Schottky Barriers in Bilayer Phosphorene Transistors.

    Science.gov (United States)

    Pan, Yuanyuan; Dan, Yang; Wang, Yangyang; Ye, Meng; Zhang, Han; Quhe, Ruge; Zhang, Xiuying; Li, Jingzhen; Guo, Wanlin; Yang, Li; Lu, Jing

    2017-04-12

    It is unreliable to evaluate the Schottky barrier height (SBH) in monolayer (ML) 2D material field effect transistors (FETs) with strongly interacted electrode from the work function approximation (WFA) because of existence of the Fermi-level pinning. Here, we report the first systematical study of bilayer (BL) phosphorene FETs in contact with a series of metals with a wide work function range (Al, Ag, Cu, Au, Cr, Ti, Ni, and Pd) by using both ab initio electronic band calculations and quantum transport simulation (QTS). Different from only one type of Schottky barrier (SB) identified in the ML phosphorene FETs, two types of SBs are identified in BL phosphorene FETs: the vertical SB between the metallized and the intact phosphorene layer, whose height is determined from the energy band analysis (EBA); the lateral SB between the metallized and the channel BL phosphorene, whose height is determined from the QTS. The vertical SBHs show a better consistency with the lateral SBHs of the ML phosphorene FETs from the QTS compared than that of the popular WFA. Therefore, we develop a better and more general method than the WFA to estimate the lateral SBHs of ML semiconductor transistors with strongly interacted electrodes based on the EBA for its BL counterpart. In terms of the QTS, n-type lateral Schottky contacts are formed between BL phosphorene and Cr, Al, and Cu electrodes with electron SBH of 0.27, 0.31, and 0.32 eV, respectively, while p-type lateral Schottky contacts are formed between BL phosphorene and Pd, Ti, Ni, Ag, and Au electrodes with hole SBH of 0.11, 0.18, 0.19, 0.20, and 0.21 eV, respectively. The theoretical polarity and SBHs are in good agreement with available experiments. Our study provides an insight into the BL phosphorene-metal interfaces that are crucial for designing the BL phosphorene device.

  14. Precursor Parameter Identification for Insulated Gate Bipolar Transistor (IGBT) Prognostics

    Data.gov (United States)

    National Aeronautics and Space Administration — Precursor parameters have been identified to enable development of a prognostic approach for insulated gate bipolar transistors (IGBT). The IGBT were subjected to...

  15. Microwave field-efffect transistors theory, design, and application

    CERN Document Server

    Pengelly, Raymond

    1994-01-01

    This book covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations.

  16. Reaching saturation in patterned source vertical organic field effect transistors

    Science.gov (United States)

    Greenman, Michael; Sheleg, Gil; Keum, Chang-min; Zucker, Jonathan; Lussem, Bjorn; Tessler, Nir

    2017-05-01

    Like most of the vertical transistors, the Patterned Source Vertical Organic Field Effect Transistor (PS-VOFET) does not exhibit saturation in the output characteristics. The importance of achieving a good saturation is demonstrated in a vertical organic light emitting transistor; however, this is critical for any application requiring the transistor to act as a current source. Thereafter, a 2D simulation tool was used to explain the physical mechanisms that prevent saturation as well as to suggest ways to overcome them. We found that by isolating the source facet from the drain-source electric field, the PS-VOFET architecture exhibits saturation. The process used for fabricating such saturation-enhancing structure is then described. The new device demonstrated close to an ideal saturation with only 1% change in the drain-source current over a 10 V change in the drain-source voltage.

  17. Review of Heterojunctin Bipolar Transistor Structure, Applications, and Reliability

    Science.gov (United States)

    Lee, C.; Kayali, S.

    1993-01-01

    Heterojunction Bipolar Transistors (HBTs) are increasingly employed in high frequency, high linerity, and high efficiency applications. As the utilization of these devices becomes more widespread, their operation will be viewed with more scrutiny.

  18. Lateral PNP bipolar transistor with aiding field diffusions

    Science.gov (United States)

    Gallagher, R. C.; Mc Cann, D. H.

    1969-01-01

    Fabrication technique produces field aided lateral PNP transistors compatible with micropower switching circuits. The sub-collector diffusion is performed with phosphorus as the dopant and the epitaxy is grown using the higher temperature silicon tetrachloride process.

  19. Transferred substrate heterojunction bipolar transistors for submillimeter wave applications

    Science.gov (United States)

    Fung, A.; Samoska, L.; Siegel, P.; Rodwell, M.; Urteaga, M.; Paidi, V.

    2003-01-01

    We present ongoing work towards the development of submillimeter wave transistors with goals of realizing advanced high frequency amplifiers, voltage controlled oscillators, active multipliers, and traditional high-speed digital circuits.

  20. Controlling charge current through a DNA based molecular transistor

    Energy Technology Data Exchange (ETDEWEB)

    Behnia, S., E-mail: s.behnia@sci.uut.ac.ir; Fathizadeh, S.; Ziaei, J.

    2017-01-05

    Molecular electronics is complementary to silicon-based electronics and may induce electronic functions which are difficult to obtain with conventional technology. We have considered a DNA based molecular transistor and study its transport properties. The appropriate DNA sequence as a central chain in molecular transistor and the functional interval for applied voltages is obtained. I–V characteristic diagram shows the rectifier behavior as well as the negative differential resistance phenomenon of DNA transistor. We have observed the nearly periodic behavior in the current flowing through DNA. It is reported that there is a critical gate voltage for each applied bias which above it, the electrical current is always positive. - Highlights: • Modeling a DNA based molecular transistor and studying its transport properties. • Choosing the appropriate DNA sequence using the quantum chaos tools. • Choosing the functional interval for voltages via the inverse participation ratio tool. • Detecting the rectifier and negative differential resistance behavior of DNA.