WorldWideScience

Sample records for single silicon chip

  1. Compact single-chip VMUX/DEMUX on the silicon-on-insulator platform.

    Science.gov (United States)

    Feng, Dazeng; Feng, Ning-Ning; Kung, Cheng-Chih; Liang, Hong; Qian, Wei; Fong, Joan; Luff, B Jonathan; Asghari, Mehdi

    2011-03-28

    We demonstrate a compact, single-chip 40-channel, dense wavelength division multiplexing (DWDM) variable attenuator multi/demultiplexer (VMUX/DEMUX) by monolithic integration of an echelle grating and high-speed p-i-n VOA on the silicon-on-insulator (SOI) platform. The demonstrated device has a flat-top filter shape, on chip loss of 5.0 dB, low PDL of 0.3 dB after compensation of the polarization dependent frequency (PDF) shift, a fast attenuation response speed of 3 MHz, and an area of only 25 mm by 10 mm.

  2. Silicon Chip-to-Chip Mode-Division Multiplexing

    DEFF Research Database (Denmark)

    Baumann, Jan Markus; Porto da Silva, Edson; Ding, Yunhong

    2018-01-01

    A chip-to-chip mode-division multiplexing connection is demonstrated using a pair of multiplexers/demultiplexers fabricated on the silicon-on-insulator platform. Successful mode multiplexing and demultiplexing is experimentally demonstrated, using the LP01, LP11a and LP11b modes.......A chip-to-chip mode-division multiplexing connection is demonstrated using a pair of multiplexers/demultiplexers fabricated on the silicon-on-insulator platform. Successful mode multiplexing and demultiplexing is experimentally demonstrated, using the LP01, LP11a and LP11b modes....

  3. Chip-size-packaged silicon microphones [for hearing instruments

    DEFF Research Database (Denmark)

    Müllenborn, Matthias; Rombach, Pirmin; Klein, Udo

    2001-01-01

    The first results of silicon microphones that are completely batch-packaged and integrated with signal conditioning circuitry in a chip stack are discussed. The chip stack is designed to be directly mounted into a system, such as a hearing instrument, without further single-chip handling or wire...... consumption of about 50 μW in the near future, thereby living up to the tight specifications of microphones for hearing instruments. Other potential applications include mobile phones, headsets, and wearable computers, in which space is constrained....

  4. FISH & CHIPS: Four Electrode Conductivity / Salinity Sensor on a Silicon Multi-sensor chip for Fisheries Research

    DEFF Research Database (Denmark)

    Hyldgård, Anders; Olafsdottir, Iris; Olesen, M.

    2005-01-01

    The design and fabrication of a single chip silicon salinity, temperature, pressure and light multisensor is presented. The behavior 2- and 4-electrode conductivity microsensors are described and methods for precise determination of water conductivity are given......The design and fabrication of a single chip silicon salinity, temperature, pressure and light multisensor is presented. The behavior 2- and 4-electrode conductivity microsensors are described and methods for precise determination of water conductivity are given...

  5. Dry-film polymer waveguide for silicon photonics chip packaging.

    Science.gov (United States)

    Hsu, Hsiang-Han; Nakagawa, Shigeru

    2014-09-22

    Polymer waveguide made by dry film process is demonstrated for silicon photonics chip packaging. With 8 μm × 11.5 μm core waveguide, little penalty is observed up to 25 Gbps before or after the light propagate through a 10-km long single-mode fiber (SMF). Coupling loss to SMF is 0.24 dB and 1.31 dB at the polymer waveguide input and output ends, respectively. Alignment tolerance for 0.5 dB loss increase is +/- 1.0 μm along both vertical and horizontal directions for the coupling from the polymer waveguide to SMF. The dry-film polymer waveguide demonstrates promising performance for silicon photonics chip packaging used in next generation optical multi-chip module.

  6. Simultaneous Polarization Demultiplexing and Demodulation of PolMux-DPSK Signals in a Silicon Chip

    DEFF Research Database (Denmark)

    Huang, Bo; Ding, Yunhong; Ou, Haiyan

    2013-01-01

    Simultaneous polarization demultiplexing and demodulation of PolMux-DPSK signals is demonstrated using a polarization splitter and rotator together with a single microring resonator on a silicon chip. System experimental results validate the concept.......Simultaneous polarization demultiplexing and demodulation of PolMux-DPSK signals is demonstrated using a polarization splitter and rotator together with a single microring resonator on a silicon chip. System experimental results validate the concept....

  7. Single cell electroporation on chip

    NARCIS (Netherlands)

    Valero, Ana

    2006-01-01

    In this thesis the results of the development of microfluidic cell trap devices for single cell electroporation are described, which are to be used for gene transfection. The performance of two types of Lab-on-a-Chip trapping devices was tested using beads and cells, whereas the functionality for

  8. On-chip microsystems in silicon: opportunities and limitations

    Science.gov (United States)

    Wolffenbuttel, R. F.

    1996-03-01

    Integrated on-chip micro-instrumentation systems in silicon are complete data acquisition systems on a single chip. This concept has appeared to be the ultimate solution in many applications, as it enables in principle the metamorphosis of a basic sensing element, affected with many shortcomings, into an on-chip data acquisition unit that provides an output digital data stream in a standard format not corrupted by sensor non-idealities. Market acceptance would be maximum, as no special knowledge about the internal operation is required, self-test and self-calibration can be included and the dimensions are not different from those of the integrated circuit. The various aspects that are relevant in estimating the constraints for successful implementation of the integrated silicon smart sensor will be outlined in comparison with the properties of more conventional sensor fabrication technologies. It will be shown that the acceptance of on-chip functional integration in an application depends primarily on the added value in terms of improved specification or functionality that the resulting device provides in that application. The economic viability is therefore decisive rather than the technological constraints. This is in contrast to the traditional technology push prevailing in sensor research over market pull mechanisms.

  9. Optical continuum generation on a silicon chip

    Science.gov (United States)

    Jalali, Bahram; Boyraz, Ozdal; Koonath, Prakash; Raghunathan, Varun; Indukuri, Tejaswi; Dimitropoulos, Dimitri

    2005-08-01

    Although the Raman effect is nearly two orders of magnitude stronger than the electronic Kerr nonlinearity in silicon, under pulsed operation regime where the pulse width is shorter than the phonon response time, Raman effect is suppressed and Kerr nonlinearity dominates. Continuum generation, made possible by the non-resonant Kerr nonlinearity, offers a technologically and economically appealing path to WDM communication at the inter-chip or intra-chip levels. We have studied this phenomenon experimentally and theoretically. Experimentally, a 2 fold spectral broadening is obtained by launching ~4ps optical pulses with 2.2GW/cm2 peak power into a conventional silicon waveguide. Theoretical calculations, that include the effect of two-photon-absorption, free carrier absorption and refractive index change indicate that up to >30 times spectral broadening is achievable in an optimized device. The broadening is due to self phase modulation and saturates due to two photon absorption. Additionally, we find that free carrier dynamics also contributes to the spectral broadening and cause the overall spectrum to be asymmetric with respect to the pump wavelength.

  10. Silicon carbide transparent chips for compact atomic sensors

    Science.gov (United States)

    Huet, L.; Ammar, M.; Morvan, E.; Sarazin, N.; Pocholle, J.-P.; Reichel, J.; Guerlin, C.; Schwartz, S.

    2017-11-01

    Atom chips [1] are an efficient tool for trapping, cooling and manipulating cold atoms, which could open the way to a new generation of compact atomic sensors addressing space applications. This is in particular due to the fact that they can achieve strong magnetic field gradients near the chip surface, hence strong atomic confinement at moderate electrical power. However, this advantage usually comes at the price of reducing the optical access to the atoms, which are confined very close to the chip surface. We will report at the conference experimental investigations showing how these limits could be pushed farther by using an atom chip made of a gold microcircuit deposited on a single-crystal Silicon Carbide (SiC) substrate [2]. With a band gap energy value of about 3.2 eV at room temperature, the latter material is transparent at 780nm, potentially restoring quasi full optical access to the atoms. Moreover, it combines a very high electrical resistivity with a very high thermal conductivity, making it a good candidate for supporting wires with large currents without the need of any additional electrical insulation layer [3].

  11. 3D chip stacking with through silicon-vias (TSVs) for vertical interconnect and underfill dispensing

    Science.gov (United States)

    Le, Fuliang; Lee, Shi-Wei Ricky; Zhang, Qiming

    2017-04-01

    3D chip stacking with through silicon vias (TSVs) has been identified as one of the major technologies for achieving higher silicon packaging density and shorter interconnect. The test vehicle presented in this paper is a 3D chip stack package. Each layer of the test vehicle has two silicon flip chips mounted at the bottom of a silicon interposer with solder bumps. The flip chip has the equivalent dimensions and pad patterns as commercial memory chips. The interposer, with multiple interconnect TSVs for electrical connection and a central TSV for underfill dispensing, can function as a logic chip or as a redistribution chip in a real application. The assembly steps of the test vehicle include conductive adhesive filling for the interconnect TSVs, bonding two bumped flip chips on an interposer (to form a single layer), vertical stacking of the single layers and underfill dispensing. For the filling of the interconnect TSVs, an auger-dispensing method is first adopted to overfill the interconnect TSVs, followed by removing the excessive adhesive beyond the interconnect TSVs by squeegeeing. A jet valve continuously dispenses free dots of an underfill encapsulant into the central TSVs. The central TSVs function as an entrance for underfill dispensing and an uninterrupted point-source to provide fluid for each layer. The free dots form a capillary flow to fill the under-chip spaces of the test vehicle. The usage of TSVs rather than chip edges eliminates the presence of a wide edge reservoir, resulting in smaller ‘keep-out’ area occupation on the substrate.

  12. On-chip Mode Multiplexer Based on a Single Grating Coupler

    DEFF Research Database (Denmark)

    Ding, Yunhong; Ou, Haiyan; Xu, Jing

    2012-01-01

    A two-mode multiplexer based on a single grating coupler is proposed and demonstrated on a silicon chip. The LP01 and LP11 modes of a few-mode fiber are excited from TE0 and TE1 silicon waveguide modes.......A two-mode multiplexer based on a single grating coupler is proposed and demonstrated on a silicon chip. The LP01 and LP11 modes of a few-mode fiber are excited from TE0 and TE1 silicon waveguide modes....

  13. Design and performance of the ABCD chip for the binary readout of silicon strip detectors in the ATLAS semiconductor tracker

    CERN Document Server

    Dabrowski, W; Buttar, C M; Cindro, V; Clarks, A G; Dawson, I; Dorfan, D; Dubbs, T; Falconer, N; French, M; Greenall, A; Grillo, A A; Happer, R; Jarron, Pierre; Kaplon, J; Kudlaty, J; Kramberger, G; Lacasta, C; La Marra, D; Macina, Daniela; Mandic, I; Mikuz, M; Meddeler, G; Milgrome, O; Niggli, H; Phillips, P W; Roe, S; Smith, A; Spieler, H; Spencer, E; Szczygiel, R; Weilhammer, Peter; Wolter, M; Zsenei, A

    2000-01-01

    The ABCD design is a single chip implementation of the binary readout architecture for silicon strip detectors in the ATLAS semiconductor tracker. The prototype chip has been manufactured successfully in the DMILL process. In the paper we present the design of the chip and the measurement results. The basic analogue performance of the ABCD design has been evaluated using a prototype SCT module equipped with the ABCD chips. The digital performance has been evaluated using a general purpose IC tester. The measurements confirmed that all blocks of the ABCD design are fully functional and the chips meet all basic requirements of the SCT. (7 refs).

  14. SVX3: A deadtimeless readout chip for silicon strip detectors

    International Nuclear Information System (INIS)

    Zimmerman, T.; Huffman, T.; Srage, J.; Stroehmer, R.; Yarema, R.; Garcia-Sciveras, M.; Luo, L.; Milgrome, O.

    1997-12-01

    A new silicon strip readout chip called the SVX3 has been designed for the 720,000 channel CDF silicon upgrade at Fermilab. SVX3 incorporates an integrator, analog delay pipeline, ADC, and data sparsification for each of 128 identical channels. Many of the operating parameters are programmable via a serial bit stream, which allows the chip to be used under a variety of conditions. Distinct features of SVX3 include use of a backside substrate contact for optimal ground referencing, and the capability of simultaneous signal acquisition and digital readout allowing deadtimeless operation in the Fermilab Tevatron

  15. Distributed Processing Using Single-chip Microcomputers

    National Research Council Canada - National Science Library

    Pritchett, William

    1996-01-01

    This project investigates the use of single-chip microprocessors as nodes in a token ring control network and explores the implementation of a protocol to manage communication across such a network...

  16. Characterization of porous silicon integrated in liquid chromatography chips

    NARCIS (Netherlands)

    Tiggelaar, Roald M.; Verdoold, Vincent; Eghbali, H.; Desmet, G.; Gardeniers, Johannes G.E.

    2009-01-01

    Properties of porous silicon which are relevant for use of the material as a stationary phase in liquid chromatography chips, like porosity, pore size and specific surface area, were determined with high-resolution SEM and N2 adsorption–desorption isotherms. For the anodization conditions

  17. Silicon-Chip-Based Optical Frequency Combs

    Science.gov (United States)

    2015-10-26

    microresonator,” Phys. Rev. Lett. 107, 063901 (2011). [54] H. Jung, et al., “Optical frequency comb generation from aluminum nitride microring resonator...supercontinuum generation in silicon nitride waveguides. 15. SUBJECT TERMS Nonlinear optics, parametric mixing, nanophotonics, optical frequency combs 16...Finally, we investigated comb generation via coherent supercontinuum generation in silicon nitride waveguides. Our research effort illustrates that the

  18. "Silicon millefeuille": From a silicon wafer to multiple thin crystalline films in a single step

    Science.gov (United States)

    Hernández, David; Trifonov, Trifon; Garín, Moisés; Alcubilla, Ramon

    2013-04-01

    During the last years, many techniques have been developed to obtain thin crystalline films from commercial silicon ingots. Large market applications are foreseen in the photovoltaic field, where important cost reductions are predicted, and also in advanced microelectronics technologies as three-dimensional integration, system on foil, or silicon interposers [Dross et al., Prog. Photovoltaics 20, 770-784 (2012); R. Brendel, Thin Film Crystalline Silicon Solar Cells (Wiley-VCH, Weinheim, Germany 2003); J. N. Burghartz, Ultra-Thin Chip Technology and Applications (Springer Science + Business Media, NY, USA, 2010)]. Existing methods produce "one at a time" silicon layers, once one thin film is obtained, the complete process is repeated to obtain the next layer. Here, we describe a technology that, from a single crystalline silicon wafer, produces a large number of crystalline films with controlled thickness in a single technological step.

  19. Integrating photonics with silicon nanoelectronics for the next generation of systems on a chip.

    Science.gov (United States)

    Atabaki, Amir H; Moazeni, Sajjad; Pavanello, Fabio; Gevorgyan, Hayk; Notaros, Jelena; Alloatti, Luca; Wade, Mark T; Sun, Chen; Kruger, Seth A; Meng, Huaiyu; Al Qubaisi, Kenaish; Wang, Imbert; Zhang, Bohan; Khilo, Anatol; Baiocco, Christopher V; Popović, Miloš A; Stojanović, Vladimir M; Ram, Rajeev J

    2018-04-01

    Electronic and photonic technologies have transformed our lives-from computing and mobile devices, to information technology and the internet. Our future demands in these fields require innovation in each technology separately, but also depend on our ability to harness their complementary physics through integrated solutions 1,2 . This goal is hindered by the fact that most silicon nanotechnologies-which enable our processors, computer memory, communications chips and image sensors-rely on bulk silicon substrates, a cost-effective solution with an abundant supply chain, but with substantial limitations for the integration of photonic functions. Here we introduce photonics into bulk silicon complementary metal-oxide-semiconductor (CMOS) chips using a layer of polycrystalline silicon deposited on silicon oxide (glass) islands fabricated alongside transistors. We use this single deposited layer to realize optical waveguides and resonators, high-speed optical modulators and sensitive avalanche photodetectors. We integrated this photonic platform with a 65-nanometre-transistor bulk CMOS process technology inside a 300-millimetre-diameter-wafer microelectronics foundry. We then implemented integrated high-speed optical transceivers in this platform that operate at ten gigabits per second, composed of millions of transistors, and arrayed on a single optical bus for wavelength division multiplexing, to address the demand for high-bandwidth optical interconnects in data centres and high-performance computing 3,4 . By decoupling the formation of photonic devices from that of transistors, this integration approach can achieve many of the goals of multi-chip solutions 5 , but with the performance, complexity and scalability of 'systems on a chip' 1,6-8 . As transistors smaller than ten nanometres across become commercially available 9 , and as new nanotechnologies emerge 10,11 , this approach could provide a way to integrate photonics with state-of-the-art nanoelectronics.

  20. Ultra-thin silicon (UTSi) on insulator CMOS transceiver and time-division multiplexed switch chips for smart pixel integration

    Science.gov (United States)

    Zhang, Liping; Sawchuk, Alexander A.

    2001-12-01

    We describe the design, fabrication and functionality of two different 0.5 micron CMOS optoelectronic integrated circuit (OEIC) chips based on the Peregrine Semiconductor Ultra-Thin Silicon on insulator technology. The Peregrine UTSi silicon- on-sapphire (SOS) technology is a member of the silicon-on- insulator (SOI) family. The low-loss synthetic sapphire substrate is optically transparent and has good thermal conductivity and coefficient of thermal expansion properties, which meet the requirements for flip-chip bonding of VCSELs and other optoelectronic input-output components. One chip contains transceiver and network components, including four channel high-speed CMOS transceiver modules, pseudo-random bit stream (PRBS) generators, a voltage controlled oscillator (VCO) and other test circuits. The transceiver chips can operate in both self-testing mode and networking mode. An on- chip clock and true-single-phase-clock (TSPC) D-flip-flop have been designed to generate a PRBS at over 2.5 Gb/s for the high-speed transceiver arrays to operate in self-testing mode. In the networking mode, an even number of transceiver chips forms a ring network through free-space or fiber ribbon interconnections. The second chip contains four channel optical time-division multiplex (TDM) switches, optical transceiver arrays, an active pixel detector and additional test devices. The eventual applications of these chips will require monolithic OEICs with integrated optical input and output. After fabrication and testing, the CMOS transceiver array dies will be packaged with 850 nm vertical cavity surface emitting lasers (VCSELs), and metal-semiconductor- metal (MSM) or GaAs p-i-n detector die arrays to achieve high- speed optical interconnections. The hybrid technique could be either wire bonding or flip-chip bonding of the CMOS SOS smart-pixel arrays with arrays of VCSELs and photodetectors onto an optoelectronic chip carrier as a multi-chip module (MCM).

  1. Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

    Science.gov (United States)

    Kim, Je-Hyung; Aghaeimeibodi, Shahriar; Richardson, Christopher J K; Leavitt, Richard P; Englund, Dirk; Waks, Edo

    2017-12-13

    Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.

  2. A Low Mass On-Chip Readout Scheme for Double-Sided Silicon Strip Detectors

    Energy Technology Data Exchange (ETDEWEB)

    Irmler, C., E-mail: christian.irmler@oeaw.ac.at [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Bergauer, T.; Frankenberger, A.; Friedl, M.; Gfall, I. [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria); Higuchi, T. [University of Tokyo, Kavli Institute for Physics and Mathematics of the Universe, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8583 (Japan); Ishikawa, A. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Joo, C. [Seoul National University, High Energy Physics Laboratory, 25-107 Shinlim-dong, Kwanak-gu, Seoul 151-742 (Korea, Republic of); Kah, D.H.; Kang, K.H. [Kyungpook National University, Department of Physics, 1370 Sankyuk Dong, Buk Gu, Daegu 702-701 (Korea, Republic of); Rao, K.K. [Tata Institute of Fundamental Research, Experimental High Energy Physics Group, Homi Bhabha Road, Mumbai 400 005 (India); Kato, E. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Mohanty, G.B. [Tata Institute of Fundamental Research, Experimental High Energy Physics Group, Homi Bhabha Road, Mumbai 400 005 (India); Negishi, K. [Tohoku University, Department of Physics, Aoba Aramaki Aoba-ku, Sendai 980-8578 (Japan); Onuki, Y.; Shimizu, N. [University of Tokyo, Department of Physics, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033 (Japan); Tsuboyama, T. [KEK, 1-1 Oho, Tsukuba, Ibaraki 305-0801 (Japan); Valentan, M. [HEPHY Vienna – Institute of High Energy Physics of the Austrian Academy of Sciences, Nikolsdorfer Gasse 18, A-1050 Vienna (Austria)

    2013-12-21

    B-factories like the KEKB in Tsukuba, Japan, operate at relatively low energies and thus require detectors with very low material budget in order to minimize multiple scattering. On the other hand, front-end chips with short shaping time like the APV25 have to be placed as close to the sensor strips as possible to reduce the capacitive load, which mainly determines the noise figure. In order to achieve both – minimal material budget and low noise – we developed a readout scheme for double-sided silicon detectors, where the APV25 chips are placed on a flexible circuit, which is glued onto the top side of the sensor. The bottom-side strips are connected by two flexible circuits, which are bent around the edge of the sensor. This so-called “Origami” design will be utilized to build the Silicon Vertex Detector of the Belle II experiment, which will consist of four layers made from ladders with up to five double-sided silicon strip sensors in a row. Each ladder will be supported by two ribs made of a carbon fiber and Airex foam core sandwich. The heat dissipated by the front-end chips will be removed by a highly efficient two-phase CO{sub 2} system. Thanks to the Origami concept, all APV25 chips are aligned in a row and thus can be cooled by a single thin cooling pipe per ladder. We present the concept and the assembly procedure of the Origami chip-on-sensor modules.

  3. A Low Mass On-Chip Readout Scheme for Double-Sided Silicon Strip Detectors

    International Nuclear Information System (INIS)

    Irmler, C.; Bergauer, T.; Frankenberger, A.; Friedl, M.; Gfall, I.; Higuchi, T.; Ishikawa, A.; Joo, C.; Kah, D.H.; Kang, K.H.; Rao, K.K.; Kato, E.; Mohanty, G.B.; Negishi, K.; Onuki, Y.; Shimizu, N.; Tsuboyama, T.; Valentan, M.

    2013-01-01

    B-factories like the KEKB in Tsukuba, Japan, operate at relatively low energies and thus require detectors with very low material budget in order to minimize multiple scattering. On the other hand, front-end chips with short shaping time like the APV25 have to be placed as close to the sensor strips as possible to reduce the capacitive load, which mainly determines the noise figure. In order to achieve both – minimal material budget and low noise – we developed a readout scheme for double-sided silicon detectors, where the APV25 chips are placed on a flexible circuit, which is glued onto the top side of the sensor. The bottom-side strips are connected by two flexible circuits, which are bent around the edge of the sensor. This so-called “Origami” design will be utilized to build the Silicon Vertex Detector of the Belle II experiment, which will consist of four layers made from ladders with up to five double-sided silicon strip sensors in a row. Each ladder will be supported by two ribs made of a carbon fiber and Airex foam core sandwich. The heat dissipated by the front-end chips will be removed by a highly efficient two-phase CO 2 system. Thanks to the Origami concept, all APV25 chips are aligned in a row and thus can be cooled by a single thin cooling pipe per ladder. We present the concept and the assembly procedure of the Origami chip-on-sensor modules

  4. Performance of the CAMEX64 silicon strip readout chip

    International Nuclear Information System (INIS)

    Yarema, R.J.

    1989-06-01

    The CAMEX64 is a 64 channel full custom CMOS chip designed specifically for the readout of silicon strip detectors. CAMEX which stands for CMOS Multichannel Analog MultiplEXer for Silicon Strip Detectors was designed by members of the Franhofer Institute for Microelectronic Circuits and Systems and the Max Planck Institute for Physics and Astrophysics. Each CAMEX channel has a switched capacitor charge sensitive amplifier with 4 sampling capacitors and a multiplexing scheme for reading out each of the channels on an analog bus. The device uses multiple sampling capacitors to filter and reduce input noise. Filtering is controlled through sampling techniques using external clocks. The device operates in a double correlated sampling mode and therefore cannot separate detector leakage current from a charge input. Normal operation of this device is similar to all other silicon readout chips designed and built thus far in that there is a data acquisition cycle during which charge is simultaneously accepted on all channels for a short period of time from a detector array, followed by a readout cycle where that charge or hit information is read out. This device works especially well for colliding beam experiments where the time of charge arrival is accurately known. However it can be used in fixed target or asynchronous mode where the time of charge arrival is not well known. In the asynchronous mode it appears that gain is somewhat dependent on the time interval required to decide whether or not to accept charge input information and thus the maximum signal to noise performance found with the synchronous mode may not be achieved in the asynchronous mode. 18 figs., 5 tabs

  5. Single-chip microcomputer application in nuclear radiation monitoring instruments

    International Nuclear Information System (INIS)

    Zhang Songshou

    1994-01-01

    The single-chip microcomputer has advantage in many respects i.e. multiple function, small size, low-power consumption,reliability etc. It is widely used now in industry, instrumentation, communication and machinery. The author introduced usage of single-chip microcomputer in nuclear radiation monitoring instruments for control, linear compensation, calculation, changeable parameter presetting and military training

  6. 160 Gbit/s optical packet switching using a silicon chip

    DEFF Research Database (Denmark)

    Hu, Hao; Ji, Hua; Galili, Michael

    2012-01-01

    We have successfully demonstrated 160 Gbit/s all-optical packet switching based on cross-phase modulation using a silicon chip. Error free performance is achieved for the 4-to-1 switched 160 Gbit/s packet.......We have successfully demonstrated 160 Gbit/s all-optical packet switching based on cross-phase modulation using a silicon chip. Error free performance is achieved for the 4-to-1 switched 160 Gbit/s packet....

  7. Study of silicon chip soldering in high-power transistor housing

    Directory of Open Access Journals (Sweden)

    Vasily S. Anosov

    2017-09-01

    We experimentally assessed the effect of outer housing layer materials and back side chip metallization. For lead-silver soldering of silicon chips, the best housing is that with a nickel outer layer rather than with a gold-plated one, because the resultant thermal resistance is lower and the absence of gold makes the technology cheaper. We obtained a 0.6 K/W thermal resistance for a 24 mm2 chip area.

  8. Anisotropy of Single-Crystal Silicon in Nanometric Cutting.

    Science.gov (United States)

    Wang, Zhiguo; Chen, Jiaxuan; Wang, Guilian; Bai, Qingshun; Liang, Yingchun

    2017-12-01

    The anisotropy exhibited by single-crystal silicon in nanometric cutting is very significant. In order to profoundly understand the effect of crystal anisotropy on cutting behaviors, a large-scale molecular dynamics model was conducted to simulate the nanometric cutting of single-crystal silicon in the (100)[0-10], (100)[0-1-1], (110)[-110], (110)[00-1], (111)[-101], and (111)[-12-1] crystal directions in this study. The simulation results show the variations of different degrees in chip, subsurface damage, cutting force, and friction coefficient with changes in crystal plane and crystal direction. Shear deformation is the formation mechanism of subsurface damage, and the direction and complexity it forms are the primary causes that result in the anisotropy of subsurface damage. Structurally, chips could be classified into completely amorphous ones and incompletely amorphous ones containing a few crystallites. The formation mechanism of the former is high-pressure phase transformation, while the latter is obtained under the combined action of high-pressure phase transformation and cleavage. Based on an analysis of the material removal mode, it can be found that compared with the other crystal direction on the same crystal plane, the (100)[0-10], (110)[-110], and (111)[-101] directions are more suitable for ductile cutting.

  9. On-chip photonic microsystem for optical signal processing based on silicon and silicon nitride platforms

    Science.gov (United States)

    Li, Yu; Li, Jiachen; Yu, Hongchen; Yu, Hai; Chen, Hongwei; Yang, Sigang; Chen, Minghua

    2018-04-01

    The explosive growth of data centers, cloud computing and various smart devices is limited by the current state of microelectronics, both in terms of speed and heat generation. Benefiting from the large bandwidth, promising low power consumption and passive calculation capability, experts believe that the integrated photonics-based signal processing and transmission technologies can break the bottleneck of microelectronics technology. In recent years, integrated photonics has become increasingly reliable and access to the advanced fabrication process has been offered by various foundries. In this paper, we review our recent works on the integrated optical signal processing system. We study three different kinds of on-chip signal processors and use these devices to build microsystems for the fields of microwave photonics, optical communications and spectrum sensing. The microwave photonics front receiver was demonstrated with a signal processing range of a full-band (L-band to W-band). A fully integrated microwave photonics transceiver without the on-chip laser was realized on silicon photonics covering the signal frequency of up 10 GHz. An all-optical orthogonal frequency division multiplexing (OFDM) de-multiplier was also demonstrated and used for an OFDM communication system with the rate of 64 Gbps. Finally, we show our work on the monolithic integrated spectrometer with a high resolution of about 20 pm at the central wavelength of 1550 nm. These proposed on-chip signal processing systems potential applications in the fields of radar, 5G wireless communication, wearable devices and optical access networks.

  10. Fabrication of 25 μm-filter microfluidic chip on silicon substrate

    Science.gov (United States)

    Ngan Le, Nguyen; Khanh Huynh, Kim; Cam Hue Phan, Thi; Dung Dang, Thi My; Chien Dang, Mau

    2017-03-01

    This paper presents the entire fabrication process including photolithography, sputtering, deep reactive ion etching (Bosch DRIE process) on silicon substrate and bonding process between the lid and silicon substrate to create a designed filtration microfluidic chip with dimension of 28 mm × 7 mm, one inlet port and one outlet port. A pattered silver thin film was deposited on a silicon sample by the lift-off method. Subsequently the newly fabricated sample was anisotropically etched by Bosch DRIE process. Some parameters of Bosch DRIE process such as bias power, duration of etching step and passivation step, oxygen presence were studied to explore the dependence of silicon channel depth and etched shape profile on these parameters. An optimized process was utilized to fabricate a featured silicon channel with vertical, smooth sidewalls and an overall good uniformity. The silicon channel has four arrays of microposts with various distances between microposts from 25 μm to 100 μm. The depth of the silicon channel was about 150 μm. After that, silicon substrate was bonded with mica lid by adhesive bonding method to form the completed filtration microfluidic chip. The samples were characterized by scanning electron microscopy (SEM), mechanical profilometer (DEKTAK 6 M), optical microscopy (Olympus MX51). In this paper a test was performed to demonstrate how the microfluidic chip works by pumping solution with many various sizes of particles through the inlet port of the microfluidic chip and obtaining a solution with desired particles sizes (smaller than 25 μm) through another port. Moreover, the chip could be pumped de-ionized water through outlet port for backwash in order to make this microfluidic chip reusable. Finally, a few applications of microfluidic chips are presented to illustrate the advantages of this technology and the potential for future development. Invited talk at 8th International Workshop on Advanced Materials Science and Nanotechnology

  11. Experimental demonstration of reservoir computing on a silicon photonics chip

    Science.gov (United States)

    Vandoorne, Kristof; Mechet, Pauline; van Vaerenbergh, Thomas; Fiers, Martin; Morthier, Geert; Verstraeten, David; Schrauwen, Benjamin; Dambre, Joni; Bienstman, Peter

    2014-03-01

    In today’s age, companies employ machine learning to extract information from large quantities of data. One of those techniques, reservoir computing (RC), is a decade old and has achieved state-of-the-art performance for processing sequential data. Dedicated hardware realizations of RC could enable speed gains and power savings. Here we propose the first integrated passive silicon photonics reservoir. We demonstrate experimentally and through simulations that, thanks to the RC paradigm, this generic chip can be used to perform arbitrary Boolean logic operations with memory as well as 5-bit header recognition up to 12.5 Gbit s-1, without power consumption in the reservoir. It can also perform isolated spoken digit recognition. Our realization exploits optical phase for computing. It is scalable to larger networks and much higher bitrates, up to speeds >100 Gbit s-1. These results pave the way for the application of integrated photonic RC for a wide range of applications.

  12. Ultra-high-speed wavelength conversion in a silicon photonic chip

    DEFF Research Database (Denmark)

    Hu, Hao; Ji, Hua; Galili, Michael

    2011-01-01

    We have successfully demonstrated all-optical wavelength conversion of a 640-Gbit/s line-rate return-to-zero differential phase-shift keying (RZ-DPSK) signal based on low-power four wave mixing (FWM) in a silicon photonic chip with a switching energy of only ~110 fJ/bit. The waveguide dispersion...... of the silicon nanowire is nano-engineered to optimize phase matching for FWM and the switching power used for the signal processing is low enough to reduce nonlinear absorption from twophoton- absorption (TPA). These results demonstrate that high-speed wavelength conversion is achievable in silicon chips...... with high data integrity and indicate that high-speed operation can be obtained at moderate power levels where nonlinear absorption due to TPA and free-carrier absorption (FCA) is not detrimental. This demonstration can potentially enable highspeed optical networks on a silicon photonic chip....

  13. Tractor performance monitor based on a single-chip microcomputer

    Energy Technology Data Exchange (ETDEWEB)

    Bedri, A.R.; Marley, S.J.; Buchelle, W.F.; Smay, T.A.

    1981-01-01

    A tractor performance monitor based on a single-chip microcomputer was developed to measure ground speed, slip, fuel consumption (rate and total), total area, theoretical time, and total time. Transducers used are presented in detail. 5 refs.

  14. Performance of a radiation hard 128 channel analogue front-end chip for the readout of a silicon-based hybrid photon detector

    CERN Document Server

    Lacasta, C; Dulinski, W; Chesi, Enrico Guido; Joram, C; Kaplon, J; Lozano-Bahilo, J; Séguinot, Jacques; Szczygiel, R; Weilhammer, Peter; Ypsilantis, Thomas

    2003-01-01

    The performance is described of a front-end chip, the SCT128A-LC chip, originally developed for the readout of a silicon based Hybrid Photon Detector (HPD), which is part of an RICH detector to be run in an LHC experimental environment. The relatively low signal charge from single photoelectrons, impinging on the silicon pad sensor, put very stringent requirements on the noise performance of the front-end chip. An absolute noise calibration using X-ray sources and a **2**4**1Am gamma source was performed. It is demonstrated that sufficiently good signal over noise ratio can be obtained to use this chip for the read-out of an HPD in LHC experiments.

  15. Solid state silicon based condenser microphone for hearing aid, has transducer chip and IC chip between intermediate chip and openings on both sides of intermediate chip, to allow sound towards diaphragm

    DEFF Research Database (Denmark)

    2000-01-01

    towards diaphragm. Surface of the chip (2) has electrical conductors (14) to connect chip with IC chip (3). USE - For use in miniature electroacoustic devices such as hearing aid. ADVANTAGE - Since sound inlet is covered by filter, dust, moisture and other impurities do not obstruct interior and sound...... inlet of microphone. External electrical connection can be made economically reliable and the thermal stress is avoided with the small size solid state silicon based condenser microphone....

  16. Reconstitution of human ether-a-go-go-related gene channels in microfabricated silicon chips.

    Science.gov (United States)

    Oshima, Azusa; Hirano-Iwata, Ayumi; Mozumi, Hideki; Ishinari, Yutaka; Kimura, Yasuo; Niwano, Michio

    2013-05-07

    This paper reports on the reconstitution of human ether-a-go-go-related gene (hERG) channels in artificial bilayer lipid membranes (BLMs) formed in micropores fabricated in silicon chips. The hERG channels were isolated from Chinese hamster ovary cell lines expressing the channels and incorporated into the BLMs formed by a process in which the two lipid monolayers were folded into the micropores. The characteristic features of hERG channels reported by the patch-clamp method, including single-channel conductance, voltage dependence, sensitivity to typical drugs and dependence on the potassium concentration, were investigated in the BLM reconstitution system. The BLM with hERG channels incorporated exhibited a lifetime of ~65 h and a tolerance to repetitive solution exchanges. Such stable BLMs containing biological channels have the potential for use in a variety of applications, including high-throughput drug screening for various ion-channel proteins.

  17. Mechanism of single atom switch on silicon

    DEFF Research Database (Denmark)

    Quaade, Ulrich; Stokbro, Kurt; Thirstrup, C.

    1998-01-01

    We demonstrate single atom switch on silicon which operates by displacement of a hydrogen atom on the silicon (100) surface at room temperature. We find two principal effects by which the switch is controlled: a pronounced maximum of the switching probability as function of sample bias...... and a preferred direction of switching as function of STM tip position. Based on first principles calculations, are show that this behaviour is due to a novel mechanism involving an electronic excitation of a localized surface resonance. (C) 1998 Elsevier Science B.V. All rights reserved....

  18. A Single-Chip CMOS Pulse Oximeter with On-Chip Lock-In Detection

    OpenAIRE

    Diwei He; Stephen P. Morgan; Dimitrios Trachanis; Jan van Hese; Dimitris Drogoudis; Franco Fummi; Francesco Stefanni; Valerio Guarnieri; Barrie R. Hayes-Gill

    2015-01-01

    Pulse oximetry is a noninvasive and continuous method for monitoring the blood oxygen saturation level. This paper presents the design and testing of a single-chip pulse oximeter fabricated in a 0.35 ?m CMOS process. The chip includes photodiode, transimpedance amplifier, analogue band-pass filters, analogue-to-digital converters, digital signal processor and LED timing control. The experimentally measured AC and DC characteristics of individual circuits including the DC output voltage of the...

  19. Mechanically Flexible Active Silicon Chips and Systems, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Using innovative chip thinning technology married with recently available packaging technology, this effort will produce Mechanically Flexible Multifunctional Active...

  20. Introduction of a single chip TLD system for patient dosimetry

    International Nuclear Information System (INIS)

    Hranitzky, C.; Halda, M.; Mueller, G.; Stadtmann, H.; Obryk, B.

    2008-01-01

    A thermoluminescence dosimetry system with single detector chips was developed for patient dosimetry applications. LiF:Mg,Cu,P detector chips, dosimetry protocol, calibration, and dose calculation were prepared for measurements inside phantoms for determining organ and effective doses in medical diagnostic examinations. The first step was optimizing the readout time-temperature-profile for reaching a well resolved dosimetric peak and stability of the glow curves. A number of parameters was varied for the optimization process, e.g. preheating and heating rate. Individual chip sensitivities, residual dose and dose linearity were studied for establishing a reliable and accurate TL dosimetry system. (author)

  1. A single chip with multiple talents

    CERN Document Server

    Francesco Poppi

    2010-01-01

    The Medipix chips developed at CERN are being used in a variety of fields: from medicine to education and back to high-tech engineering. The scene is set for a bright future for this versatile technology.   The Medipix chip. It didn’t take long for a brilliant team of physicists and engineers who were working on pixel detectors for the LHC to realize that the technology had great potential in medical imaging. This was the birth of the Medipix project. Fifteen years later, with the collaboration of 18 research institutes, the team has produced an advanced version of the initial ideas: Medipix3 is a device that can measure very accurately the position and energy of the photons (one by one) that hit the associated detector. Radiography and computed tomography (CT) use X-ray photons to study the human body. The different energies of the photons in the beam can be thought of as the colours of the X-ray spectrum. This is why the use of Medipix3 chips in such diagnostic techniques is referred...

  2. Solar cell structure incorporating a novel single crystal silicon material

    Science.gov (United States)

    Pankove, Jacques I.; Wu, Chung P.

    1983-01-01

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  3. Optothermal response of a single silicon nanotip

    Science.gov (United States)

    Vella, A.; Shinde, D.; Houard, J.; Silaeva, E.; Arnoldi, L.; Blum, I.; Rigutti, L.; Pertreux, E.; Maioli, P.; Crut, A.; Del Fatti, N.

    2018-02-01

    The optical properties and thermal dynamics of conical single silicon nanotips are experimentally and theoretically investigated. The spectral and spatial dependencies of their optical extinction are quantitatively measured by spatial modulation spectroscopy (SMS). A nonuniform optical extinction along the tip axis and an enhanced near-infrared absorption, as compared to bulk crystalline silicon, are evidenced. This information is a key input for computing the thermal response of single silicon nanotips under ultrafast laser illumination, which is investigated by laser assisted atom probe tomography (La-APT) used as a highly sensitive temperature probe. A combination of these two experimental techniques and comparison with modeling also permits us to elucidate the impact of thermal effects on the laser assisted field evaporation process. Extension of this coupled approach opens up future perspectives for the quantitative study of the optical and thermal properties of a wide class of individual nano-objects, in particular elongated ones such as nanotubes, nanowires, and nanocones, which constitute promising nanosources for electron and/or ion emission.

  4. A single-chip computer analysis system for liquid fluorescence

    International Nuclear Information System (INIS)

    Zhang Yongming; Wu Ruisheng; Li Bin

    1998-01-01

    The single-chip computer analysis system for liquid fluorescence is an intelligent analytic instrument, which is based on the principle that the liquid containing hydrocarbons can give out several characteristic fluorescences when irradiated by strong light. Besides a single-chip computer, the system makes use of the keyboard and the calculation and printing functions of a CASIO printing calculator. It combines optics, mechanism and electronics into one, and is small, light and practical, so it can be used for surface water sample analysis in oil field and impurity analysis of other materials

  5. Wafer level fabrication of single cell dispenser chips with integrated electrodes for particle detection

    International Nuclear Information System (INIS)

    Schoendube, Jonas; Yusof, Azmi; Kalkandjiev, Kiril; Zengerle, Roland; Koltay, Peter

    2015-01-01

    This work presents the microfabrication and experimental evaluation of a dispenser chip, designed for isolation and printing of single cells by combining impedance sensing and drop-on-demand dispensing. The dispenser chip features 50  ×  55 µm (width × height) microchannels, a droplet generator and microelectrodes for impedance measurements. The chip is fabricated by sandwiching a dry film photopolymer (TMMF) between a silicon and a Pyrex wafer. TMMF has been used to define microfluidic channels, to serve as low temperature (75 °C) bonding adhesive and as etch mask during 300 µm deep HF etching of the Pyrex wafer. Due to the novel fabrication technology involving the dry film resist, it became possible to fabricate facing electrodes at the top and bottom of the channel and to apply electrical impedance sensing for particle detection with improved performance. The presented microchip is capable of dispensing liquid and detecting microparticles via impedance measurement. Single polystyrene particles of 10 µm size could be detected with a mean signal amplitude of 0.39  ±  0.13 V (n=439) at particle velocities of up to 9.6 mm s −1 inside the chip. (paper)

  6. Single-Event Effects in Silicon and Silicon Carbide Power Devices

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2014-01-01

    NASA Electronics Parts and Packaging program-funded activities over the past year on single-event effects in silicon and silicon carbide power devices are presented, with focus on SiC device failure signatures.

  7. A Single-Chip CMOS Pulse Oximeter with On-Chip Lock-In Detection.

    Science.gov (United States)

    He, Diwei; Morgan, Stephen P; Trachanis, Dimitrios; van Hese, Jan; Drogoudis, Dimitris; Fummi, Franco; Stefanni, Francesco; Guarnieri, Valerio; Hayes-Gill, Barrie R

    2015-07-14

    Pulse oximetry is a noninvasive and continuous method for monitoring the blood oxygen saturation level. This paper presents the design and testing of a single-chip pulse oximeter fabricated in a 0.35 µm CMOS process. The chip includes photodiode, transimpedance amplifier, analogue band-pass filters, analogue-to-digital converters, digital signal processor and LED timing control. The experimentally measured AC and DC characteristics of individual circuits including the DC output voltage of the transimpedance amplifier, transimpedance gain of the transimpedance amplifier, and the central frequency and bandwidth of the analogue band-pass filters, show a good match (within 1%) with the circuit simulations. With modulated light source and integrated lock-in detection the sensor effectively suppresses the interference from ambient light and 1/f noise. In a breath hold and release experiment the single chip sensor demonstrates consistent and comparable performance to commercial pulse oximetry devices with a mean of 1.2% difference. The single-chip sensor enables a compact and robust design solution that offers a route towards wearable devices for health monitoring.

  8. A Single-Chip CMOS Pulse Oximeter with On-Chip Lock-In Detection

    Directory of Open Access Journals (Sweden)

    Diwei He

    2015-07-01

    Full Text Available Pulse oximetry is a noninvasive and continuous method for monitoring the blood oxygen saturation level. This paper presents the design and testing of a single-chip pulse oximeter fabricated in a 0.35 µm CMOS process. The chip includes photodiode, transimpedance amplifier, analogue band-pass filters, analogue-to-digital converters, digital signal processor and LED timing control. The experimentally measured AC and DC characteristics of individual circuits including the DC output voltage of the transimpedance amplifier, transimpedance gain of the transimpedance amplifier, and the central frequency and bandwidth of the analogue band-pass filters, show a good match (within 1% with the circuit simulations. With modulated light source and integrated lock-in detection the sensor effectively suppresses the interference from ambient light and 1/f noise. In a breath hold and release experiment the single chip sensor demonstrates consistent and comparable performance to commercial pulse oximetry devices with a mean of 1.2% difference. The single-chip sensor enables a compact and robust design solution that offers a route towards wearable devices for health monitoring.

  9. The Origami Chip-on-Sensor Concept for Low-Mass Readout of Double-Sided Silicon Detectors

    CERN Document Server

    Friedl, M; Pernicka, M

    2008-01-01

    Modern front-end amplifiers for silicon strip detectors offer fast shaping but consequently are susceptible to input capacitance which is the main contribution to the noise figure. Hence, the amplifier must be close to the sensor which is not an issue at LHC, but a major concern at material budget sensitive experiments such as Belle or the ILC detector. We present a design of a silicon detector module with double-sided readout where thinned front-end chips are aligned on one side of the sensor which allows efficient cooling using just a single, thin aluminum pipe. The connection to the other sensor side is established by thin kapton circuits wrapped around the edge – hence the nickname origami.

  10. Single electron transistor in pure silicon

    Science.gov (United States)

    Hu, Binhui

    As promising candidates for spin qubits, semiconductor quantum dots (QDs) have attracted tremendous research efforts. Currently most advanced progress is from GaAs QDs. Compared to GaAs, lateral QDs in 28silicon are expected to have a spin coherence time orders of magnitude longer, because 28Si has zero nuclear spin, and there is no hyperfine interaction between electron spins and nuclear spins. We have developed enhancement mode metal-oxide-semiconductor (MOS) single electron transistors (SETs) using pure silicon wafers with a bi-layer gated configuration. In an MOS-SET, the top gate is used to induce a two-dimensional electron gas (2DEG), just as in an MOS field effect transistor. The side gates deplete the 2DEG into a QD and two point contact channels; one connects the QD to the source reservoir, and the other connects the QD to the drain reservoir. We have systematically investigated the MOS-SETs at 4.2 K, and separately in a dilution refrigerator with a base temperature of 10 mK. The data show that there is an intrinsic QD in each point contact channel due to the local potential fluctuations in these SETs. However, after scaling down the SETs, we have found that the intrinsic QDs can be removed and the electrostatically defined dots dominate the device behavior, but these devices currently only work in the many-electron regime. In order to realize single electron confinement, it is necessary to continue scaling down the device and improving the interface quality. To explore the spin dynamics in silicon, we have investigated a single intrinsic QD by applying a magnetic field perpendicular to the sample surface. The magnetic field dependence of the ground-state and excited-state energy levels of the QD mostly can be explained by the Zeeman effect, with no obvious orbital effect up to 9 T. The two-electron singlet-triplet (ST) transition is first time directly observed in a silicon QD by excitation spectroscopy. In this ST transition, electron-electron Coulomb

  11. Single cell enzyme diagnosis on the chip

    DEFF Research Database (Denmark)

    Jensen, Sissel Juul; Harmsen, Charlotte; Nielsen, Mette Juul

    2013-01-01

    Conventional diagnosis based on ensemble measurements often overlooks the variation among cells. Here, we present a droplet-microfluidics based platform to investigate single cell activities. Adopting a previously developed isothermal rolling circle amplification-based assay, we demonstrate detec...

  12. A Low Cost Single Chip VDL Compatible Transceiver ASIC

    Science.gov (United States)

    Becker, Robert

    2004-01-01

    Recent trends in commercial communications system components have focussed almost exclusively on cellular telephone technology. As many of the traditional sources of receiver components have discontinued non-cellular telephone products, the designers of avionics and other low volume radio applications find themselves increasingly unable to find highly integrated components. This is particularly true for low power, low cost applications which cannot afford the lavish current consumption of the software defined radio approach increasingly taken by certified device manufacturers. In this paper, we describe a low power transceiver chip targeting applications from low VHF to low UHF frequencies typical of avionics systems. The chip encompasses a selectable single or double conversion design for the receiver and a low power IF upconversion transmitter. All local oscillators are synthesized and integrated into the chip. An on-chip I-Q modulator and demodulator provide baseband modulation and demodulation capability allowing the use of low power, fixed point signal processing components for signal demodulation. The goal of this program is to demonstrate a low cost VDL mode-3 transceiver using this chip to receive text weather information sent using 4-slot TDMA with no support for voice. The data will be sent from an experimental ground station. This work is funded by NASA Glenn Research Center.

  13. Composite single crystal silicon scan mirror substrates, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Single crystal silicon is a desirable mirror substrate for scan mirrors in space telescopes. As diameters of mirrors become larger, existing manufacturing...

  14. A dissipative self-sustained optomechanical resonator on a silicon chip

    Science.gov (United States)

    Huang, J. G.; Li, Y.; Chin, L. K.; Cai, H.; Gu, Y. D.; Karim, M. F.; Wu, J. H.; Chen, T. N.; Yang, Z. C.; Hao, Y. L.; Qiu, C. W.; Liu, A. Q.

    2018-01-01

    In this letter, we report the experimental demonstration of a dissipative self-sustained optomechanical resonator on a silicon chip by introducing dissipative optomechanical coupling between a vertically offset bus waveguide and a racetrack optical cavity. Different from conventional blue-detuning limited self-oscillation, the dissipative optomechanical resonator exhibits self-oscillation in the resonance and red detuning regime. The anti-damping effects of dissipative optomechanical coupling are validated by both numerical simulation and experimental results. The demonstration of the dissipative self-sustained optomechanical resonator with an extended working range has potential applications in optomechanical oscillation for on-chip signal modulation and processing.

  15. Encoded Silicon-Chip-Based Platform for Combinatorial Synthesis and Screening.

    Science.gov (United States)

    Vastl, Julian; Wang, Tina; Trinh, Thi B; Spiegel, David A

    2017-04-10

    Solid-supported chemical libraries have proven useful for the rapid and cost-effective discovery of bioactive compounds. However, traditional on-bead screening involves time-intensive chemical characterization of hit compounds and high false positive rates. Herein, we report a new platform for encoded chemical synthesis and solid-supported screening using p-Chips, microsized silicon microtransponders capable of storing and emitting unique numerical identifiers (IDs). By encoding the structures of library members using p-Chip IDs, we can track compound identities throughout both split-and-pool synthesis and protein binding assays without destructive cleavage. Thanks to the numerical IDs, our p-Chip platform can provide binding constants for library members simply by stripping and reprobing with different protein concentrations, unlike traditional on-bead assays. To showcase these features, we synthesized a library of 108 hemagglutinin (HA) peptide variants using split-and-pool approach, and measured EC 50 s for each variant directly on p-Chips. On-chip EC 50 s obtained from these studies showed excellent correlation (80%) with those obtained using traditional ELISA methods. Our screen also yielded a false positive rate of 14%, markedly superior to that reported for conventional bead-based binding studies (66-96%).1-9 On the basis of these results, we believe the p-Chip platform has the potential to improve the effectiveness of solid-supported high-throughput screening by a significant margin.

  16. On-Chip Testing Schemes of Through-Silicon-Vias (TSVs in 3D Stacked ICs

    Directory of Open Access Journals (Sweden)

    Shadi MS. Harb

    2017-07-01

    Full Text Available This paper presents on-chip testing structures to characterize and detect faulty Through Silicon Vias (TSVs in 3D ICs technology. 3D Gunning Transceiver Logic (GTL I/O testing is proposed to characterize the performance of 3D TSVs in high speed applications. The GTL testing circuit will fire different data patterns at different frequencies to characterize the transient performance of TSVs. In addition, Different testing schemes based on an oscillation ring testing methodology are proposed to detect TSVs faults such as stuck-at, open, slope and delay degradation, and severe crosstalk TSVs coupling. A parallel ring-based oscillator test structure is proposed and simulated based on a high performance fully tunable electrical circuit pi-model where a single and coupled TSVs with ground-signal-ground (GSG and ground-signal-signal-ground (GSSG 3D vias configurations are used as a test vehicle for 3D interconnect characterization and test. Simulation results are presented using the Keysight/Agilent Advance Design System (ADS and a standard 0.25 µm CMOS process.

  17. Subwavelength engineered fiber-to-chip silicon-on-sapphire interconnects for mid-infrared applications (Conference Presentation)

    Science.gov (United States)

    Alonso-Ramos, Carlos; Han, Zhaohong; Le Roux, Xavier; Lin, Hongtao; Singh, Vivek; Lin, Pao Tai; Tan, Dawn; Cassan, Eric; Marris-Morini, Delphine; Vivien, Laurent; Wada, Kazumi; Hu, Juejun; Agarwal, Anuradha; Kimerling, Lionel C.

    2016-05-01

    The mid-Infrared wavelength range (2-20 µm), so-called fingerprint region, contains the very sharp vibrational and rotational resonances of many chemical and biological substances. Thereby, on-chip absorption-spectrometry-based sensors operating in the mid-Infrared (mid-IR) have the potential to perform high-precision, label-free, real-time detection of multiple target molecules within a single sensor, which makes them an ideal technology for the implementation of lab-on-a-chip devices. Benefiting from the great development realized in the telecom field, silicon photonics is poised to deliver ultra-compact efficient and cost-effective devices fabricated at mass scale. In addition, Si is transparent up to 8 µm wavelength, making it an ideal material for the implementation of high-performance mid-IR photonic circuits. The silicon-on-insulator (SOI) technology, typically used in telecom applications, relies on silicon dioxide as bottom insulator. Unfortunately, silicon dioxide absorbs light beyond 3.6 µm, limiting the usability range of the SOI platform for the mid-IR. Silicon-on-sapphire (SOS) has been proposed as an alternative solution that extends the operability region up to 6 µm (sapphire absorption), while providing a high-index contrast. In this context, surface grating couplers have been proved as an efficient means of injecting and extracting light from mid-IR SOS circuits that obviate the need of cleaving sapphire. However, grating couplers typically have a reduced bandwidth, compared with facet coupling solutions such as inverse or sub-wavelength tapers. This feature limits their feasibility for absorption spectroscopy applications that may require monitoring wide wavelength ranges. Interestingly, sub-wavelength engineering can be used to substantially improve grating coupler bandwidth, as demonstrated in devices operating at telecom wavelengths. Here, we report on the development of fiber-to-chip interconnects to ZrF4 optical fibers and integrated SOS

  18. Ultrahigh-speed hybrid laser for silicon photonic integrated chips

    DEFF Research Database (Denmark)

    Chung, Il-Sug; Park, Gyeong Cheol; Ran, Qijiang

    2013-01-01

    and light-emitting diode (LED) structures have been proposed so far. Our hybrid laser is one of these efforts [2]. The hybrid laser consists of a dielectric reflector, a III-V semiconductor active material, and a high-index-contrast grating (HCG) reflector formed in the silicon layer of a silicon......-oninsulator (SOI) wafer. ‘Hybrid’ indicates that a III-V active material is wafer-bonded to a silicon SOI wafer. In the hybrid laser, light is vertically amplified between the dielectric and the HCG reflectors, while the light output is laterally emitted to a normal Si ridge waveguide that is connected to the HCG...... reflector. The HCG works as a vertical mirror as well as a vertical-to-lateral coupler. Very small field penetration into the HCG allows for 3-4 times smaller modal volume than typical vertical-cavity surface-emitting lasers (VCSELs). This leads to high direct modulation speed. Details on device operating...

  19. Addressing On-Chip Power Converstion and Dissipation Issues in Many-Core System-on-a-Chip Based on Conventional Silicon and Emerging Nanotechnologies

    Science.gov (United States)

    Ashenafi, Emeshaw

    regulator design very unattractive for SOC integration and multi-/many-core environments. To circumvent the challenges, three alternative techniques based on active circuit elements to replace the passive LC filter of the buck convertor are developed. The first inductorless on-chip switching voltage regulator architecture is based on a cascaded 2nd order multiple feedback (MFB) low-pass filter (LPF). This design has the ability to modulate to multiple voltage settings via pulse-with modulation (PWM). The second approach is a supplementary design utilizing a hybrid low drop-out scheme to lower the output ripple of the switching regulator over a wider frequency range. The third design approach allows the integration of an entire power management system within a single chipset by combining a highly efficient switching regulator with an intermittently efficient linear regulator (area efficient), for robust and highly efficient on-chip regulation. The static power (Pstatic) or subthreshold leakage power (Pleak) increases with technology scaling. To mitigate static power dissipation, power gating techniques are implemented. Power gating is one of the popular methods to manage leakage power during standby periods in low-power high-speed IC design. It works by using transistor based switches to shut down part of the circuit block and put them in the idle mode. The efficiency of a power gating scheme involves minimum Ioff and high Ion for the sleep transistor. A conventional sleep transistor circuit design requires an additional header, footer, or both switches to turn off the logic block. This additional transistor causes signal delay and increases the chip area. We propose two innovative designs for next generation sleep transistor designs. For an above threshold operation, we present a sleep transistor design based on fully depleted silicon-on-insulator (FDSOI) device. For a subthreshold circuit operation, we implement a sleep transistor utilizing the newly developed silicon

  20. Development of new assembly techniques for a silicon micro-vertex detector unit using the flip-chip bonding method

    International Nuclear Information System (INIS)

    Saitoh, Y.; Takeuchi, H.; Mandai, M.; Kanazawa, H.; Yamanaka, J.; Miyahara, S.; Kamiya, M.; Fujita, Y.; Higashi, Y.; Ikeda, H.; Ikeda, M.; Koike, S.; Matsuda, T.; Ozaki, H.; Tanaka, M.; Tsuboyama, T.; Avrillon, S.; Okuno, S.; Haba, J.; Hanai, H.; Mori, S.; Yusa, K.; Fukunaga, C.

    1994-01-01

    Full-size models of a detector unit for a silicon micro-vertex detector were built for the KEK B factory. The Flip-Chip Bonding (FCB) method using a new type anisotropic conductive film was examined. The structure using the FCB method successfully provides a new architecture for the silicon micro-vertex detector unit. (orig.)

  1. Three-dimensional integration of nanotechnologies for computing and data storage on a single chip

    Science.gov (United States)

    Shulaker, Max M.; Hills, Gage; Park, Rebecca S.; Howe, Roger T.; Saraswat, Krishna; Wong, H.-S. Philip; Mitra, Subhasish

    2017-07-01

    The computing demands of future data-intensive applications will greatly exceed the capabilities of current electronics, and are unlikely to be met by isolated improvements in transistors, data storage technologies or integrated circuit architectures alone. Instead, transformative nanosystems, which use new nanotechnologies to simultaneously realize improved devices and new integrated circuit architectures, are required. Here we present a prototype of such a transformative nanosystem. It consists of more than one million resistive random-access memory cells and more than two million carbon-nanotube field-effect transistors—promising new nanotechnologies for use in energy-efficient digital logic circuits and for dense data storage—fabricated on vertically stacked layers in a single chip. Unlike conventional integrated circuit architectures, the layered fabrication realizes a three-dimensional integrated circuit architecture with fine-grained and dense vertical connectivity between layers of computing, data storage, and input and output (in this instance, sensing). As a result, our nanosystem can capture massive amounts of data every second, store it directly on-chip, perform in situ processing of the captured data, and produce ‘highly processed’ information. As a working prototype, our nanosystem senses and classifies ambient gases. Furthermore, because the layers are fabricated on top of silicon logic circuitry, our nanosystem is compatible with existing infrastructure for silicon-based technologies. Such complex nano-electronic systems will be essential for future high-performance and highly energy-efficient electronic systems.

  2. Silicon photonics: Design, fabrication, and characterization of on-chip optical interconnects

    Science.gov (United States)

    Hsieh, I.-Wei

    In recent years, the research field of silicon photonics has been developing rapidly from a concept to a demonstrated technology, and has gathered much attention from both academia and industry communities. Its many potential applications in long-haul telecommunication, mid-range data-communication, on-chip optical interconnection networks, and nano-scale sensing as well as its compatibility with electronic integrated circuits have driven much effort in realizing silicon photonics both as a disruptive technology for existing markets and as an enabling technology for new ones. Despite the promising future of silicon photonics, many fundamental issues still remain to be understood---both in the linear- and nonlinear-optical regimes. There are also many engineering challenges to make silicon photonics the gold standard in photonic integrated circuits. In this thesis, we focus on the design, fabrication, and characterization of active and passive silicon-on-insulator (SOI) photonic devices. The SOI material system differs from most conventional optical material platforms because of its high-refractive-index-contrast, which enables engineers to design very compact integrated photonic networks with sub-micron transverse waveguide dimensions and sharp bends. On the other hand, because most analytical formulas for designing waveguide devices are valid only in low-index-contrast cases, SOI photonic devices need to be analyzed numerically for accurate results. The second chapter of this thesis describes some common numerical methods such as Beam Propagation Method (BPM) and Finite Element Method (FEM) for waveguide-design simulations, and presents two design studies based on these methods. The compatibility of silicon photonic integrated circuits with conventional CMOS fabrication technology is another important aspect that distinguishes silicon photonics from others such as III-V materials and lithium niobate. However, the requirements for fabricating silicon photonic

  3. On-Chip All-Optical Switching and Memory by Silicon Photonic Crystal Nanocavities

    Directory of Open Access Journals (Sweden)

    Masaya Notomi

    2008-01-01

    Full Text Available We review our recent studies on all-optical switching and memory operations based on thermo-optic and carrier-plasma nonlinearities both induced by two-photon absorption in silicon photonic crystal nanocavities. Owing to high-Q and small volume of these photonic crystal cavities, we have demonstrated that the switching power can be largely reduced. In addition, we demonstrate that the switching time is also reduced in nanocavity devices because of their short diffusion time. These features are important for all-optical nonlinear processing in silicon photonics technologies, since silicon is not an efficient optical nonlinear material. We discuss the effect of the carrier diffusion process in our devices, and demonstrate improvement in terms of the response speed by employing ion-implantation process. Finally, we show that coupled bistable devices lead to all-optical logic, such as flip-flop operation. These results indicate that a nanocavity-based photonic crystal platform on a silicon chip may be a promising candidate for future on-chip all-optical information processing in a largely integrated fashion.

  4. On-chip real-time single-copy polymerase chain reaction in picoliter droplets

    Energy Technology Data Exchange (ETDEWEB)

    Beer, N R; Hindson, B; Wheeler, E; Hall, S B; Rose, K A; Kennedy, I; Colston, B

    2007-04-20

    The first lab-on-chip system for picoliter droplet generation and PCR amplification with real-time fluorescence detection has performed PCR in isolated droplets at volumes 10{sup 6} smaller than commercial real-time PCR systems. The system utilized a shearing T-junction in a silicon device to generate a stream of monodisperse picoliter droplets that were isolated from the microfluidic channel walls and each other by the oil phase carrier. An off-chip valving system stopped the droplets on-chip, allowing them to be thermal cycled through the PCR protocol without droplet motion. With this system a 10-pL droplet, encapsulating less than one copy of viral genomic DNA through Poisson statistics, showed real-time PCR amplification curves with a cycle threshold of {approx}18, twenty cycles earlier than commercial instruments. This combination of the established real-time PCR assay with digital microfluidics is ideal for isolating single-copy nucleic acids in a complex environment.

  5. Quantitation of ultraviolet-induced single-strand breaks using oligonucleotide chip

    International Nuclear Information System (INIS)

    Pal, Sukdeb; Kim, Min Jung; Choo, Jaebum; Kang, Seong Ho; Lee, Kyeong-Hee; Song, Joon Myong

    2008-01-01

    A simple, accurate and robust methodology was established for the direct quantification of ultraviolet (UV)-induced single-strand break (SSB) using oligonucleotide chip. Oligonucleotide chips were fabricated by covalently anchoring the fluorescent-labeled ssDNAs onto silicon dioxide chip surfaces. Assuming that the possibility of more than one UV-induced SSB to be generated in a small oligonucleotide is extremely low, SSB formation was investigated quantifying the endpoint probe density by fluorescence measurement upon UV irradiation. The SSB yields obtained based on the highly sensitive laser-induced fluorometric determination of fluorophore-labeled oligonucleotides were found to coincide well with that predicted from a theoretical extrapolation of the results obtained for plasmid DNAs using conventional agarose gel electrophoresis. The developed method has the potential to serve as a high throughput, sample-thrifty, and time saving tool to realize more realistic, and direct quantification of radiation and chemical-induced strand breaks. It will be especially useful for determining the frequency of SSBs or lesions convertible to SSBs by specific cleaving reagents or enzymes

  6. Lab-on-a-chip technologies for single-molecule studies.

    Science.gov (United States)

    Zhao, Yanhui; Chen, Danqi; Yue, Hongjun; French, Jarrod B; Rufo, Joseph; Benkovic, Stephen J; Huang, Tony Jun

    2013-06-21

    Recent developments on various lab-on-a-chip techniques allow miniaturized and integrated devices to perform on-chip single-molecule studies. Fluidic-based platforms that utilize unique microscale fluidic behavior are capable of conducting single-molecule experiments with high sensitivities and throughputs, while biomolecular systems can be studied on-chip using techniques such as DNA curtains, magnetic tweezers, and solid-state nanopores. The advances of these on-chip single-molecule techniques lead to next-generation lab-on-a-chip devices, such as DNA transistors, and single-molecule real-time (SMRT) technology for rapid and low-cost whole genome DNA sequencing. In this Focus article, we will discuss some recent successes in the development of lab-on-a-chip techniques for single-molecule studies and expound our thoughts on the near future of on-chip single-molecule studies.

  7. Using a single chip FEC for satellite systems

    Science.gov (United States)

    Onotera, L.; Nicholson, R.

    Information transmission over digital satellite communication channels is primarily power-limited, where forward error correction (FEC) codes can significantly improve performance. The use of FEC can reduce the required signal to noise ratio to sustain a given bit error rate. The use of forward error correction has become a standard part of present day digital satellite communication systems. Means of applying a new very large scale integration (VLSI) integrated circuit FEC chip into various kinds of systems is discussed. Specifically, some of the considerations and tradeoffs in continuous single channel per carrier (SCPC), multiple channels per carrier (MCPC), and burst systems are related to the new design. This new chip will provide an effective space and cost advantage by inserting a powerful forward error correction capability into most types of satellite digital communication links.

  8. Multifunctional Electronics Core Substrate Configurable Electronics Functionality with Stacked Silicon and Multi-Chip Modules

    Data.gov (United States)

    National Aeronautics and Space Administration — Integration of a mix of heterogeneous electronic device technologies (silicon, III-V, passive, etc.) into a single multifunctional substrate core. Based on the...

  9. An all-silicon single-photon source by unconventional photon blockade.

    Science.gov (United States)

    Flayac, Hugo; Gerace, Dario; Savona, Vincenzo

    2015-06-10

    The lack of suitable quantum emitters in silicon and silicon-based materials has prevented the realization of room temperature, compact, stable, and integrated sources of single photons in a scalable on-chip architecture, so far. Current approaches rely on exploiting the enhanced optical nonlinearity of silicon through light confinement or slow-light propagation, and are based on parametric processes that typically require substantial input energy and spatial footprint to reach a reasonable output yield. Here we propose an alternative all-silicon device that employs a different paradigm, namely the interplay between quantum interference and the third-order intrinsic nonlinearity in a system of two coupled optical cavities. This unconventional photon blockade allows to produce antibunched radiation at extremely low input powers. We demonstrate a reliable protocol to operate this mechanism under pulsed optical excitation, as required for device applications, thus implementing a true single-photon source. We finally propose a state-of-art implementation in a standard silicon-based photonic crystal integrated circuit that outperforms existing parametric devices either in input power or footprint area.

  10. Antifuse with a single silicon-rich silicon nitride insulating layer

    Science.gov (United States)

    Habermehl, Scott D.; Apodaca, Roger T.

    2013-01-22

    An antifuse is disclosed which has an electrically-insulating region sandwiched between two electrodes. The electrically-insulating region has a single layer of a non-hydrogenated silicon-rich (i.e. non-stoichiometric) silicon nitride SiN.sub.X with a nitrogen content X which is generally in the range of 0silicon. Arrays of antifuses can also be formed.

  11. Ultracompact on-chip photothermal power monitor based on silicon hybrid plasmonic waveguides

    Directory of Open Access Journals (Sweden)

    Wu Hao

    2017-01-01

    Full Text Available We propose and demonstrate an ultracompact on-chip photothermal power monitor based on a silicon hybrid plasmonic waveguide (HPWG, which consists of a metal strip, a silicon core, and a silicon oxide (SiO2 insulator layer between them. When light injected to an HPWG is absorbed by the metal strip, the temperature increases and the resistance of the metal strip changes accordingly due to the photothermal and thermal resistance effects of the metal. Therefore, the optical power variation can be monitored by measuring the resistance of the metal strip on the HPWG. To obtain the electrical signal for the resistance measurement conveniently, a Wheatstone bridge circuit is monolithically integrated with the HPWG on the same chip. As the HPWG has nanoscale light confinement, the present power monitor is as short as ~3 μm, which is the smallest photothermal power monitor reported until now. The compactness helps to improve the thermal efficiency and the response speed. For the present power monitor fabricated with simple fabrication processes, the measured responsivity is as high as about 17.7 mV/mW at a bias voltage of 2 V and the power dynamic range is as large as 35 dB.

  12. Fabrication and characterization of n-on-n silicon pixel detectors compatible with the Medipix2 readout chip

    International Nuclear Information System (INIS)

    Zorzi, N.; Bisogni, M.G.; Boscardin, M.; Dalla Betta, G.-F.; Gregori, P.; Novelli, M.; Piemonte, C.; Quattrocchi, M.; Ronchin, S.; Rosso, V.

    2005-01-01

    Pixel detectors for mammographic applications have been fabricated at ITC-irst on 800 μm thick silicon wafers adopting a double side n + -on-n fabrication technology. The activity aims at increasing the X-ray detection efficiency in the energy range of interest minimizing the risk of electrical discharges in hybrid systems operating at high voltages. The detectors, having a layout compatible with the Medipix2 photon counting chip, feature two different design solutions for the p-isolation between neighboring n + -pixels. We report on the characterization of the fabrication process and on preliminary results of electrical measurements on full detectors and pixel test structures. In particular, we found that the detectors can be reliably operated above the full depletion voltage regardless of the isolation design, that however, impacts the performances in terms of current-voltage characteristics, single pixel currents, inter-pixel resistances and inter-pixel capacitances

  13. Laser Soldering and Thermal Cycling Tests of Monolithic Silicon Pixel Chips

    CERN Document Server

    Strand, Frode Sneve

    2015-01-01

    An ALPIDE-1 monolithic silicon pixel sensor prototype has been laser soldered to a flex printed circuit using a novel interconnection technique using lasers. This technique is to be optimised to ensure stable, good quality connections between the sensor chips and the FPCs. To test the long-term stability of the connections, as well as study the effects on hit thresholds and noise in the sensor, it was thermally cycled in a climate chamber 1200 times. The soldered connections showed good qualities like even melting and good adhesion on pad/flex surfaces, and the chip remained in working condition for 1080 cycles. After this, a few connections failed, having cracks in the soldering tin, rendering the chip unusable. Threshold and noise characteristics seemed stable, except for the noise levels of sector 2 in the chip, for 1000 cycles in a temperature interval of "10^{\\circ}" and "50^{\\circ}" C. Still, further testing with wider temperature ranges and more cycles is needed to test the limitations of the chi...

  14. Magnetic resonance spectroscopy of single centers in silicon quantum wells

    Energy Technology Data Exchange (ETDEWEB)

    Bagraev, Nikolay T., E-mail: impurity.dipole@mail.ioffe.r [Ioffe Physical-Technical Institute, 194021 St. Petersburg (Russian Federation); Klyachkin, Leonid E.; Kudryavtsev, Andrey A.; Malyarenko, Anna M. [Ioffe Physical-Technical Institute, 194021 St. Petersburg (Russian Federation)

    2009-12-15

    We present the new optically detected magnetic resonance (ODMR) technique which reveals single point defects in silicon quantum wells embedded in microcavities within frameworks of the excitonic normal-mode coupling (NMC) without the external cavity and the hf source.

  15. Covalent functionalization of carbon nanotube forests grown in situ on a metal-silicon chip

    KAUST Repository

    Johansson, Johan R.

    2012-03-12

    We report on the successful covalent functionalization of carbon nanotube (CNT) forests, in situ grown on a silicon chip with thin metal contact film as the buffer layer between the CNT forests and the substrate. The CNT forests were successfully functionalized with active amine and azide groups, which can be used for further chemical reactions. The morphology of the CNT forests was maintained after the functionalization. We thus provide a promising foundation for a miniaturized biosensor arrays system that can be easily integrated with Complementary Metal-Oxide Semiconductor (CMOS) technology.

  16. Handheld mechanical cell lysis chip with ultra-sharp silicon nano-blade arrays for rapid intracellular protein extraction.

    Science.gov (United States)

    Yun, Sung-Sik; Yoon, Sang Youl; Song, Min-Kyung; Im, Sin-Hyeog; Kim, Sohee; Lee, Jong-Hyun; Yang, Sung

    2010-06-07

    This paper presents a handheld mechanical cell lysis chip with ultra-sharp nano-blade arrays fabricated by simple and cost effective crystalline wet etching of (110) silicon. The ultra-sharp nano-blade array is simply formed by the undercutting of (110) silicon during the crystalline wet etching process. Cells can be easily disrupted by the silicon nano-blade array without the help of additional reagents or electrical sources. Based on the bench-top test of the proposed device, a handheld mechanical cell lysis chip with the nano-blade arrays is designed and fabricated for direct connection to a commercial syringe. The direct connection to a syringe provides rapid cell lysis, easy handling, and minimization of the lysate dead volume. The protein concentration in the cell lysate obtained by the proposed lysis chip is quantitatively comparable to the one prepared by a conventional chemical lysis method.

  17. HELIX128S-2 - A readout chip for the silicon vertex detector and inner tracker detector of HERA-B

    International Nuclear Information System (INIS)

    Trunk, U.; Fallot-Burghardt, W.; Sexauer, E.; Knoepfle, K-T.; Hofmann, W.; Cuje, M.; Glass, B.; Feuerstack-Raible, M.; Eisele, F.; Straumann, U.

    1998-01-01

    HERA-B is a fixed target experiment at the HERA proton storage ring dedicated to examine CP-violation in the B-Meson system. Based on the RD20-FElix concept a readout chip has been designed in AMS's 0.8 μm CMOS process for the HERA-B silicon vertex and inner tracker (MSGC) detectors. Various test chips have been submitted and successfully tested since '95, thus enabling the submission of a fully integrated 128 channel version in April '97. Design features of this chip (HELIX128S-2) and test results of its predecessor HELIX128 are presented

  18. Resistivity distribution of silicon single crystals using codoping

    Science.gov (United States)

    Wang, Jong Hoe

    2005-07-01

    Numerous studies including continuous Czochralski method and double crucible technique have been reported on the control of macroscopic axial resistivity distribution in bulk crystal growth. The simple codoping method for improving the productivity of silicon single-crystal growth by controlling axial specific resistivity distribution was proposed by Wang [Jpn. J. Appl. Phys. 43 (2004) 4079]. Wang [J. Crystal Growth 275 (2005) e73] demonstrated using numerical analysis and by experimental results that the axial specific resistivity distribution can be modified in melt growth of silicon crystals and relatively uniform profile is possible by B-P codoping method. In this work, the basic characteristic of 8 in silicon single crystal grown using codoping method is studied and whether proposed method has advantage for the silicon crystal growth is discussed.

  19. Single-Event Effects in Silicon Carbide Power Devices

    Science.gov (United States)

    Lauenstein, Jean-Marie; Casey, Megan C.; LaBel, Kenneth A.; Ikpe, Stanley; Topper, Alyson D.; Wilcox, Edward P.; Kim, Hak; Phan, Anthony M.

    2015-01-01

    This report summarizes the NASA Electronic Parts and Packaging Program Silicon Carbide Power Device Subtask efforts in FY15. Benefits of SiC are described and example NASA Programs and Projects desiring this technology are given. The current status of the radiation tolerance of silicon carbide power devices is given and paths forward in the effort to develop heavy-ion single-event effect hardened devices indicated.

  20. Single-Chip Computers With Microelectromechanical Systems-Based Magnetic Memory

    NARCIS (Netherlands)

    Carley, L. Richard; Bain, James A.; Fedder, Gary K.; Greve, David W.; Guillou, David F.; Lu, Michael S.C.; Mukherjee, Tamal; Santhanam, Suresh; Abelmann, Leon; Min, Seungook

    This article describes an approach for implementing a complete computer system (CPU, RAM, I/O, and nonvolatile mass memory) on a single integrated-circuit substrate (a chip)—hence, the name "single-chip computer." The approach presented combines advances in the field of microelectromechanical

  1. Single-chip mass flow controller with integrated Coriolis flow sensor and proportional control valve

    NARCIS (Netherlands)

    Groenesteijn, Jarno; Alveringh, Dennis; Groen, Maarten; Wiegerink, Remco J.; Lötters, Joost Conrad

    2016-01-01

    We have designed, fabricated and tested the, to our knowledge, first ever single-chip mass flow controller with an integrated Coriolis mass flow sensor and a proportional control valve. A minimum internal volume is obtained, because the complete fluid path is integrated in a single chip. We

  2. Optical biosensor based on a silicon nanowire ridge waveguide for lab on chip applications

    Science.gov (United States)

    Gamal, Rania; Ismail, Yehea; Swillam, Mohamed A.

    2015-04-01

    We propose a novel sensor using a silicon nanowire ridge waveguide (SNRW). This waveguide is comprised of an array of silicon nanowires on an insulator substrate that has the envelope of a ridge waveguide. The SNRW inherently maximizes the overlap between the material-under-test and the incident light wave by introducing voids to the otherwise bulk structure. When a sensing sample is injected, the voids within the SNRW adopt the refractive index of the material-under-test. Hence, the strong contribution of the material-under-test to the overall modal effective index will greatly augment the sensitivity. Additionally, the ridge structure provides a fabrication convenience as it covers the entire substrate, ensuring that the etching process would not damage the substrate. Finite-difference time-domain simulations are conducted and showed that the percentage change in the effective index due to a 1% change in the surrounding environment is more than 170 times the change perceived in an evanescent-detection based bulk silicon ridge waveguide. Moreover, the SNRW proves to be more sensitive than recent other, non-evanescent sensors. In addition, the detection limit for this structure was revealed to be as small as 10-8. A compact bimodal waveguide based on SNRW is designed and tested. It delivers high sensitivity values that offer comparable performance to similar low-index light-guiding sensing configurations; however, our proposed structure has much smaller footprints and allows high dense integration for lab-on-chip applications.

  3. Precision Photothermal Annealing of Nanoporous Gold Thin Films for the Microfabrication of a Single-chip Material Libraries

    Energy Technology Data Exchange (ETDEWEB)

    Harris, C. D. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Shen, N. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Rubenchik, A. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Demos, S. G. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Matthews, M. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2015-06-30

    Single-chip material libraries of thin films of nanostructured materials are a promising approach for high throughput studies of structure-property relationship in the fields of physics and biology. Nanoporous gold (np-Au), produced by an alloy corrosion process, is a nanostructured material of specific interest in both these fields. One attractive property of np-Au is its self-similar coarsening behavior by thermally induced surface diffusion. However, traditional heat application techniques for the modification of np-Au are bulk processes that cannot be used to generate a library of different pore sizes on a single chip. Laser micromachining offers an attractive solution to this problem by providing a means to apply energy with high spatial and temporal resolution. In the present study we use finite element multiphysics simulations to predict the effects of laser mode (continuous-wave vs. pulsed) and supporting substrate thermal conductivity on the local np-Au film temperatures during photothermal annealing and subsequently investigate the mechanisms by which the np-Au network is coarsening. Our simulations predict that continuous-wave mode laser irradiation on a silicon supporting substrate supports the widest range of morphologies that can be created through the photothermal annealing of thin film np-Au. Using this result we successfully fabricate a single-chip material library consisting of 81 np-Au samples of 9 different morphologies for use in increased throughput material interaction studies.

  4. Silicon Dioxide Thin Film Mediated Single Cell Nucleic Acid Isolation

    Science.gov (United States)

    Bogdanov, Evgeny; Dominova, Irina; Shusharina, Natalia; Botman, Stepan; Kasymov, Vitaliy; Patrushev, Maksim

    2013-01-01

    A limited amount of DNA extracted from single cells, and the development of single cell diagnostics make it necessary to create a new highly effective method for the single cells nucleic acids isolation. In this paper, we propose the DNA isolation method from biomaterials with limited DNA quantity in sample, and from samples with degradable DNA based on the use of solid-phase adsorbent silicon dioxide nanofilm deposited on the inner surface of PCR tube. PMID:23874571

  5. Chip based single cell analysis for nanotoxicity assessment.

    Science.gov (United States)

    Shah, Pratikkumar; Kaushik, Ajeet; Zhu, Xuena; Zhang, Chengxiao; Li, Chen-Zhong

    2014-05-07

    Nanomaterials, because of their tunable properties and performances, have been utilized extensively in everyday life related consumable products and technology. On exposure, beyond the physiological range, nanomaterials cause health risks via affecting the function of organisms, genomic systems, and even the central nervous system. Thus, new analytical approaches for nanotoxicity assessment to verify the feasibility of nanomaterials for future use are in demand. The conventional analytical techniques, such as spectrophotometric assay-based techniques, usually require a lengthy and time-consuming process and often produce false positives, and often cannot be implemented at a single cell level measurement for studying cell behavior without interference from its surrounding environment. Hence, there is a demand for a precise, accurate, sensitive assessment for toxicity using single cells. Recently, due to the advantages of automation of fluids and minimization of human errors, the integration of a cell-on-a-chip (CoC) with a microfluidic system is in practice for nanotoxicity assessments. This review explains nanotoxicity and its assessment approaches with advantages/limitations and new approaches to overcome the confines of traditional techniques. Recent advances in nanotoxicity assessment using a CoC integrated with a microfluidic system are also discussed in this review, which may be of use for nanotoxicity assessment and diagnostics.

  6. The STS-XYTER ASIC. A dedicated front-end chip for the CBM silicon tracking system

    Energy Technology Data Exchange (ETDEWEB)

    Sorokin, Iurii [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany); Kiev Institute for Nuclear Research, Kiev (Ukraine); Krzysztof, Krzysztof; Kleczek, Rafal; Otfinowski, Piotr; Szczygiel, Robert [AGH University of Science and Technology, Cracow (Poland); Kleipa, Volker [GSI Helmholtzzentrum fuer Schwerionenforschung GmbH, Darmstadt (Germany); Collaboration: CBM-Collaboration

    2015-07-01

    The STS-XYTER is a 128-channel charge-sensitive front-end chip, designed specifically for the Silicon Tracking System of the CBM experiment. The chip features a self-triggering architecture, which enables it to measure the signal amplitude and the time of arrival in each input channel autonomously, as soon as the signal in the given channel exceeds a predefined threshold. The design time resolution is about 10 ns, the dynamic range is 15 fC, and the amplitude is digitized with an integrated 5-bit flash ADC. Two shapers with distinct rise times are used to achieve low rate of noise hits in combination with the good time resolution, and low power consumption (6 mW/channel). The characterization of chips samples is ongoing. An overview of the chip architecture as well as the operation principle is given.

  7. The silicon chip: A versatile micro-scale platform for micro- and nano-scale systems

    Science.gov (United States)

    Choi, Edward

    Cutting-edge advances in micro- and nano-scale technology require instrumentation to interface with the external world. While technology feature sizes are continually being reduced, the size of experimentalists and their instrumentation do not mirror this trend. Hence there is a need for effective application-specific instrumentation to bridge the gap from the micro and nano-scale phenomena being studied to the comparative macro-scale of the human interfaces. This dissertation puts forward the idea that the silicon CMOS integrated circuit, or microchip in short, serves as an excellent platform to perform this functionality. The electronic interfaces designed for the semiconductor industry are particularly attractive as development platforms, and the reduction in feature sizes that has been a hallmark of the industry suggests that chip-scale instrumentation may be more closely coupled to the phenomena of interest, allowing finer control or improved measurement capabilities. Compatibility with commercial processes will further enable economies of scale through mass production, another welcome feature of this approach. Thus chip-scale instrumentation may replace the bulky, expensive, cumbersome-to-operate macro-scale prototypes currently in use for many of these applications. The dissertation examines four specific applications in which the chip may serve as the ideal instrumentation platform. These are nanorod manipulation, polypyrrole bilayer hinge microactuator control, organic transistor hybrid circuits, and contact fluorescence imaging. The thesis is structured around chapters devoted to each of these projects, in addition to a chapter on preliminary work on an RFID system that serves as a wireless interface model. Each of these chapters contains tools and techniques developed for chip-scale instrumentation, from custom scripts for automated layout and data collection to microfabrication processes. Implementation of these tools to develop systems for the

  8. SALT, a dedicated readout chip for high precision tracking silicon strip detectors at the LHCb Upgrade

    Science.gov (United States)

    Bugiel, Sz.; Dasgupta, R.; Firlej, M.; Fiutowski, T.; Idzik, M.; Kuczynska, M.; Moron, J.; Swientek, K.; Szumlak, T.

    2016-02-01

    The Upstream Tracker (UT) silicon strip detector, one of the central parts of the tracker system of the modernised LHCb experiment, will use a new 128-channel readout ASIC called SALT. It will extract and digitise analogue signals from the UT sensors, perform digital signal processing and transmit a serial output data. The SALT is being designed in CMOS 130 nm process and uses a novel architecture comprising of analog front-end and fast (40 MSps) ultra-low power (<0.5 mW) 6-bit ADC in each channel. The prototype ASICs of important functional blocks, like analogue front-end, 6-bit SAR ADC, PLL, and DLL, were designed, fabricated and tested. A prototype of an 8-channel version of the SALT chip, comprising all important functionalities was also designed and fabricated. The architecture and design of the SALT, together with the selected preliminary tests results, are presented.

  9. Design and simulation of MEMS microvalves for silicon photonic biosensor chip

    Science.gov (United States)

    Amemiya, Yoshiteru; Nakashima, Yuuto; Maeda, Jun; Yokoyama, Shin

    2018-04-01

    For the early and easy diagnosis of diseases, we have proposed a silicon photonic biosensor chip with two kinds of MEMS microvalves for a multiple-item detection system. The driving voltage of the vertical type with the circular-plate capacitor structure and that of the lateral type with the comb-shaped electrode are investigated. From mechanical calculations, the driving voltage of the vertical type is estimated to be 30 V and that of the lateral type to be 15 V. The propagation loss at the intersecting waveguides of arrayed ring-resonator biosensors is also estimated. In the case of optimized intersecting waveguides, more than 67% transmittance of TE-mode light is simulated for the series connection of 20 intersecting waveguides. It is confirmed that it is possible to fabricate an 8 × 12 arrayed biosensor chip in an area of 1 × 1.5 mm2 taking the device size of the microvalves into consideration. We have, for the first time, designed a whole system, including sensors and a fluid channel with MEMS microvalves.

  10. Self-diffusion in single crystalline silicon nanowires

    Science.gov (United States)

    Südkamp, T.; Hamdana, G.; Descoins, M.; Mangelinck, D.; Wasisto, H. S.; Peiner, E.; Bracht, H.

    2018-04-01

    Self-diffusion experiments in single crystalline isotopically controlled silicon nanowires with diameters of 70 and 400 nm at 850 and 1000 °C are reported. The isotope structures were first epitaxially grown on top of silicon substrate wafers. Nanowires were subsequently fabricated using a nanosphere lithography process in combination with inductively coupled plasma dry reactive ion etching. Three-dimensional profiling of the nanosized structure before and after diffusion annealing was performed by means of atom probe tomography (APT). Self-diffusion profiles obtained from APT analyses are accurately described by Fick's law for self-diffusion. Data obtained for silicon self-diffusion in nanowires are equal to the results reported for bulk silicon crystals, i.e., finite size effects and high surface-to-volume ratios do not significantly affect silicon self-diffusion. This shows that the properties of native point defects determined from self-diffusion in bulk crystals also hold for nanosized silicon structures with diameters down to 70 nm.

  11. Study on irradiation effects of nucleus electromagnetic pulse on single chip computer system

    International Nuclear Information System (INIS)

    Hou Minsheng; Liu Shanghe; Wang Shuping

    2001-01-01

    Intense electromagnetic pulse, namely nucleus electromagnetic pulse (NEMP), lightning electromagnetic pulse (LEMP) and high power microwave (HPM), can disturb and destroy the single chip computer system. To study this issue, the authors made irradiation experiments by NEMPs generated by gigahertz transversal electromagnetic (GTEM) Cell. The experiments show that shutdown, restarting, communication errors of the single chip microcomputer system would occur when it was irradiated by the NEMPs. Based on the experiments, the cause on the effects on the single chip microcomputer system is discussed

  12. Soft error rate simulation and initial design considerations of neutron intercepting silicon chip (NISC)

    Science.gov (United States)

    Celik, Cihangir

    -scale technologies. Prevention of SEEs has been studied and applied in the semiconductor industry by including radiation protection precautions in the system architecture or by using corrective algorithms in the system operation. Decreasing 10B content (20%of natural boron) in the natural boron of Borophosphosilicate glass (BPSG) layers that are conventionally used in the fabrication of semiconductor devices was one of the major radiation protection approaches for the system architecture. Neutron interaction in the BPSG layer was the origin of the SEEs because of the 10B (n,alpha) 7Li reaction products. Both of the particles produced have the capability of ionization in the silicon substrate region, whose thickness is comparable to the ranges of these particles. Using the soft error phenomenon in exactly the opposite manner of the semiconductor industry can provide a new neutron detection system based on the SERs in the semiconductor memories. By investigating the soft error mechanisms in the available semiconductor memories and enhancing the soft error occurrences in these devices, one can convert all memory using intelligent systems into portable, power efficient, directiondependent neutron detectors. The Neutron Intercepting Silicon Chip (NISC) project aims to achieve this goal by introducing 10B-enriched BPSG layers to the semiconductor memory architectures. This research addresses the development of a simulation tool, the NISC Soft Error Analysis Tool (NISCSAT), for soft error modeling and analysis in the semiconductor memories to provide basic design considerations for the NISC. NISCSAT performs particle transport and calculates the soft error probabilities, or SER, depending on energy depositions of the particles in a given memory node model of the NISC. Soft error measurements were performed with commercially available, off-the-shelf semiconductor memories and microprocessors to observe soft error variations with the neutron flux and memory supply voltage. Measurement

  13. A single dopant atom in silicon sees the light

    Science.gov (United States)

    Rogge, Sven

    2014-03-01

    Optical access to a single qubit is very attractive since it allows for readout with unprecedented high spectral resolution and long distance coupling. Substantial progress has been demonstrated for nitrogen-vacancy centers in diamond (Bernien, Nature, 2013). Optical access to qubits in silicon been an important goal but has to date only been achieved in the ensemble limit (Steger, Science, 2012). Here, we present the photoionization of an individual erbium dopant in silicon (Yin, Nature, 2013). A single-electron transistor is used as a single-shot charge detector to observe the resonant ionization of a single atom as a function of photon energy. This allows for optical addressing and electrical detection of individual erbium dopants with exceptionally narrow line width. The hyperfine coupling is clearly resolved which paves the way to single shot readout of the nuclear spin. This hybrid approach is a first step towards an optical interface to dopants in silicon. in collaboration with Chunming Yin, Milos Rancic, Gabriele G. de Boo, Nikolas Stavrias, Jeffrey C. McCallum, Matthew J. Sellars.

  14. Single-Chip Multiple-Frequency RF MEMS Resonant Platform for Wireless Communications Project

    Data.gov (United States)

    National Aeronautics and Space Administration — A novel, single-chip, multiple-frequency platform for RF/IF filtering and clock reference based on contour-mode aluminum nitride (AlN) MEMS piezoelectric resonators...

  15. Single-Chip Multiple-Frequency RF MEMS Resonant Platform for Wireless Communications, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — A novel, single-chip, multiple-frequency platform for RF/IF filtering and clock reference based on contour-mode aluminum nitride (AlN) MEMS piezoelectric resonators...

  16. Unveiling the Formation Pathway of Single Crystalline Porous Silicon Nanowires

    Science.gov (United States)

    Zhong, Xing; Qu, Yongquan; Lin, Yung-Chen; Liao, Lei; Duan, Xiangfeng

    2011-01-01

    Porous silicon nanowire is emerging as an interesting material system due to its unique combination of structural, chemical, electronic, and optical properties. To fully understand their formation mechanism is of great importance for controlling the fundamental physical properties and enabling potential applications. Here we present a systematic study to elucidate the mechanism responsible for the formation of porous silicon nanowires in a two-step silver-assisted electroless chemical etching method. It is shown that silicon nanowire arrays with various porosities can be prepared by varying multiple experimental parameters such as the resistivity of the starting silicon wafer, the concentration of oxidant (H2O2) and the amount of silver catalyst. Our study shows a consistent trend that the porosity increases with the increasing wafer conductivity (dopant concentration) and oxidant (H2O2) concentration. We further demonstrate that silver ions, formed by the oxidation of silver, can diffuse upwards and re-nucleate on the sidewalls of nanowires to initiate new etching pathways to produce porous structure. The elucidation of this fundamental formation mechanism opens a rational pathway to the production of wafer-scale single crystalline porous silicon nanowires with tunable surface areas ranging from 370 m2·g−1 to 30 m2·g−1, and can enable exciting opportunities in catalysis, energy harvesting, conversion, storage, as well as biomedical imaging and therapy. PMID:21244020

  17. Controlling growth density and patterning of single crystalline silicon nanowires

    International Nuclear Information System (INIS)

    Chang, Tung-Hao; Chang, Yu-Cheng; Liu, Fu-Ken; Chu, Tieh-Chi

    2010-01-01

    This study examines the usage of well-patterned Au nanoparticles (NPs) as a catalyst for one-dimensional growth of single crystalline Si nanowires (NWs) through the vapor-liquid-solid (VLS) mechanism. The study reports the fabrication of monolayer Au NPs through the self-assembly of Au NPs on a 3-aminopropyltrimethoxysilane (APTMS)-modified silicon substrate. Results indicate that the spin coating time of Au NPs plays a crucial role in determining the density of Au NPs on the surface of the silicon substrate and the later catalysis growth of Si NWs. The experiments in this study employed optical lithography to pattern Au NPs, treating them as a catalyst for Si NW growth. The patterned Si NW structures easily produced and controlled Si NW density. This approach may be useful for further studies on single crystalline Si NW-based nanodevices and their properties.

  18. On-Chip Waveguide Coupling of a Layered Semiconductor Single-Photon Source.

    Science.gov (United States)

    Tonndorf, Philipp; Del Pozo-Zamudio, Osvaldo; Gruhler, Nico; Kern, Johannes; Schmidt, Robert; Dmitriev, Alexander I; Bakhtinov, Anatoly P; Tartakovskii, Alexander I; Pernice, Wolfram; Michaelis de Vasconcellos, Steffen; Bratschitsch, Rudolf

    2017-09-13

    Fully integrated quantum technology based on photons is in the focus of current research, because of its immense potential concerning performance and scalability. Ideally, the single-photon sources, the processing units, and the photon detectors are all combined on a single chip. Impressive progress has been made for on-chip quantum circuits and on-chip single-photon detection. In contrast, nonclassical light is commonly coupled onto the photonic chip from the outside, because presently only few integrated single-photon sources exist. Here, we present waveguide-coupled single-photon emitters in the layered semiconductor gallium selenide as promising on-chip sources. GaSe crystals with a thickness below 100 nm are placed on Si 3 N 4 rib or slot waveguides, resulting in a modified mode structure efficient for light coupling. Using optical excitation from within the Si 3 N 4 waveguide, we find nonclassicality of generated photons routed on the photonic chip. Thus, our work provides an easy-to-implement and robust light source for integrated quantum technology.

  19. Single-chip RF communications systems in CMOS

    DEFF Research Database (Denmark)

    Olesen, Ole

    1997-01-01

    The paper describes the state of the art of the Nordic mobile communication project ConFront. This is a cooperation project with 3 Nordic universities and local industry. The ultimate goal is to make a CMOS one-chip mobile phone.......The paper describes the state of the art of the Nordic mobile communication project ConFront. This is a cooperation project with 3 Nordic universities and local industry. The ultimate goal is to make a CMOS one-chip mobile phone....

  20. Identifying EGFR-Expressed Cells and Detecting EGFR Multi-Mutations at Single-Cell Level by Microfluidic Chip

    Science.gov (United States)

    Li, Ren; Zhou, Mingxing; Li, Jine; Wang, Zihua; Zhang, Weikai; Yue, Chunyan; Ma, Yan; Peng, Hailin; Wei, Zewen; Hu, Zhiyuan

    2018-03-01

    EGFR mutations companion diagnostics have been proved to be crucial for the efficacy of tyrosine kinase inhibitor targeted cancer therapies. To uncover multiple mutations occurred in minority of EGFR-mutated cells, which may be covered by the noises from majority of un-mutated cells, is currently becoming an urgent clinical requirement. Here we present the validation of a microfluidic-chip-based method for detecting EGFR multi-mutations at single-cell level. By trapping and immunofluorescently imaging single cells in specifically designed silicon microwells, the EGFR-expressed cells were easily identified. By in situ lysing single cells, the cell lysates of EGFR-expressed cells were retrieved without cross-contamination. Benefited from excluding the noise from cells without EGFR expression, the simple and cost-effective Sanger's sequencing, but not the expensive deep sequencing of the whole cell population, was used to discover multi-mutations. We verified the new method with precisely discovering three most important EGFR drug-related mutations from a sample in which EGFR-mutated cells only account for a small percentage of whole cell population. The microfluidic chip is capable of discovering not only the existence of specific EGFR multi-mutations, but also other valuable single-cell-level information: on which specific cells the mutations occurred, or whether different mutations coexist on the same cells. This microfluidic chip constitutes a promising method to promote simple and cost-effective Sanger's sequencing to be a routine test before performing targeted cancer therapy.[Figure not available: see fulltext.

  1. Study of a Microfluidic Chip Integrating Single Cell Trap and 3D Stable Rotation Manipulation

    Directory of Open Access Journals (Sweden)

    Liang Huang

    2016-08-01

    Full Text Available Single cell manipulation technology has been widely applied in biological fields, such as cell injection/enucleation, cell physiological measurement, and cell imaging. Recently, a biochip platform with a novel configuration of electrodes for cell 3D rotation has been successfully developed by generating rotating electric fields. However, the rotation platform still has two major shortcomings that need to be improved. The primary problem is that there is no on-chip module to facilitate the placement of a single cell into the rotation chamber, which causes very low efficiency in experiment to manually pipette single 10-micron-scale cells into rotation position. Secondly, the cell in the chamber may suffer from unstable rotation, which includes gravity-induced sinking down to the chamber bottom or electric-force-induced on-plane movement. To solve the two problems, in this paper we propose a new microfluidic chip with manipulation capabilities of single cell trap and single cell 3D stable rotation, both on one chip. The new microfluidic chip consists of two parts. The top capture part is based on the least flow resistance principle and is used to capture a single cell and to transport it to the rotation chamber. The bottom rotation part is based on dielectrophoresis (DEP and is used to 3D rotate the single cell in the rotation chamber with enhanced stability. The two parts are aligned and bonded together to form closed channels for microfluidic handling. Using COMSOL simulation and preliminary experiments, we have verified, in principle, the concept of on-chip single cell traps and 3D stable rotation, and identified key parameters for chip structures, microfluidic handling, and electrode configurations. The work has laid a solid foundation for on-going chip fabrication and experiment validation.

  2. Single-chip CMUT-on-CMOS front-end system for real-time volumetric IVUS and ICE imaging.

    Science.gov (United States)

    Gurun, Gokce; Tekes, Coskun; Zahorian, Jaime; Xu, Toby; Satir, Sarp; Karaman, Mustafa; Hasler, Jennifer; Degertekin, F Levent

    2014-02-01

    Intravascular ultrasound (IVUS) and intracardiac echography (ICE) catheters with real-time volumetric ultrasound imaging capability can provide unique benefits to many interventional procedures used in the diagnosis and treatment of coronary and structural heart diseases. Integration of capacitive micromachined ultrasonic transducer (CMUT) arrays with front-end electronics in single-chip configuration allows for implementation of such catheter probes with reduced interconnect complexity, miniaturization, and high mechanical flexibility. We implemented a single-chip forward-looking (FL) ultrasound imaging system by fabricating a 1.4-mm-diameter dual-ring CMUT array using CMUT-on-CMOS technology on a front-end IC implemented in 0.35-μm CMOS process. The dual-ring array has 56 transmit elements and 48 receive elements on two separate concentric annular rings. The IC incorporates a 25-V pulser for each transmitter and a low-noise capacitive transimpedance amplifier (TIA) for each receiver, along with digital control and smart power management. The final shape of the silicon chip is a 1.5-mm-diameter donut with a 430-μm center hole for a guide wire. The overall front-end system requires only 13 external connections and provides 4 parallel RF outputs while consuming an average power of 20 mW. We measured RF A-scans from the integrated single- chip array which show full functionality at 20.1 MHz with 43% fractional bandwidth. We also tested and demonstrated the image quality of the system on a wire phantom and an ex vivo chicken heart sample. The measured axial and lateral point resolutions are 92 μm and 251 μm, respectively. We successfully acquired volumetric imaging data from the ex vivo chicken heart at 60 frames per second without any signal averaging. These demonstrative results indicate that single-chip CMUT-on-CMOS systems have the potential to produce realtime volumetric images with image quality and speed suitable for catheter-based clinical applications.

  3. The PASTA chip for the silicon micro strip sensor of the PANDA MVD

    Energy Technology Data Exchange (ETDEWEB)

    Riccardi, Alberto; Brinkmann, Kai-Thomas; Di Pietro, Valentino; Quagli, Tommaso; Schnell, Robert; Zaunick, Hans-Georg [II. Physikalisches Institut, Justus-Liebig-Universitaet, Giessen (Germany); Ritman, James; Stockmanns, Tobias; Zambanini, Andre [Forschungszentrum Juelich (Germany); Rivetti, Angelo; Rolo, Manuel [INFN Sezione di Torino (Italy); Collaboration: PANDA-Collaboration

    2016-07-01

    In the Micro Vertex Detector, which is the innermost detector of PANDA, there are two different types of sensors: hybrid pixel and double sided micro strips. My work is focused on the development of the ASIC readout for the strips, which in the PANDA experiment must cope with a hit rate up to 50 kHz per channel. The energy loss measurement of the particles crossing the silicon sensor is obtained by implementing the Time over Threshold technique. The first PASTA (PANDA Strip ASIC) prototype is based on a Time to Digital Converter with an analog clock interpolator which combines good time resolution with a low power consumption. A full size chip was developed in a 0.11μ m CMOS technology and delivered in Autumn 2015. It features 64 channels with both analog and digital parts, a digital global controller, LVDS drivers and integrated bias. In the presentation, an overview of PASTA and the results of the first tests is presented.

  4. Ultrafast all-optical order-to-chaos transition in silicon photonic crystal chips

    KAUST Repository

    Bruck, Roman

    2016-06-08

    The interaction of light with nanostructured materials provides exciting new opportunities for investigating classical wave analogies of quantum phenomena. A topic of particular interest forms the interplay between wave physics and chaos in systems where a small perturbation can drive the behavior from the classical to chaotic regime. Here, we report an all-optical laser-driven transition from order to chaos in integrated chips on a silicon photonics platform. A square photonic crystal microcavity at telecom wavelengths is tuned from an ordered into a chaotic regime through a perturbation induced by ultrafast laser pulses in the ultraviolet range. The chaotic dynamics of weak probe pulses in the near infrared is characterized for different pump-probe delay times and at various positions in the cavity, with high spatial accuracy. Our experimental analysis, confirmed by numerical modelling based on random matrices, demonstrates that nonlinear optics can be used to control reversibly the chaotic behavior of light in optical resonators. (Figure presented.) . © 2016 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

  5. A broadband single-chip transceiver for multi-nuclear NMR probes

    Science.gov (United States)

    Grisi, Marco; Gualco, Gabriele; Boero, Giovanni

    2015-04-01

    In this article, we present an integrated broadband complementary metal-oxide semiconductor single-chip transceiver suitable for the realization of multi-nuclear pulsed nuclear magnetic resonance (NMR) probes. The realized single-chip transceiver can be interfaced with on-chip integrated microcoils or external LC resonators operating in the range from 1 MHz to 1 GHz. The dimension of the chip is about 1 mm2. It consists of a radio-frequency (RF) power amplifier, a low-noise RF preamplifier, a frequency mixer, an audio-frequency amplifier, and fully integrated transmit-receive switches. As specific example, we show its use for multi-nuclear NMR spectroscopy. With an integrated coil of about 150 μm external diameter, a 1H spin sensitivity of about 1.5 × 1013 spins/Hz1/2 is achieved at 7 T.

  6. Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

    International Nuclear Information System (INIS)

    Yan, Hai; Zou, Yi; Yang, Chun-Ju; Chakravarty, Swapnajit; Wang, Zheng; Tang, Naimei; Chen, Ray T.; Fan, Donglei

    2015-01-01

    A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experiment showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed

  7. Silicon on-chip bandpass filters for the multiplexing of high sensitivity photonic crystal microcavity biosensors

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Hai, E-mail: hai.yan@utexas.edu; Zou, Yi; Yang, Chun-Ju [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Chakravarty, Swapnajit, E-mail: swapnajit.chakravarty@omegaoptics.com [Omega Optics, Inc., 8500 Shoal Creek Blvd., Austin, Texas 78757 (United States); Wang, Zheng [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Tang, Naimei; Chen, Ray T., E-mail: raychen@uts.cc.utexas.edu [Department of Electrical and Computer Engineering, Microelectronics Research Center, The University of Texas at Austin, 10100 Burnet Rd., Austin, Texas 78758 (United States); Omega Optics, Inc., 8500 Shoal Creek Blvd., Austin, Texas 78757 (United States); Fan, Donglei [Materials Science and Engineering Program, Texas Materials Institute, The University of Texas at Austin, Austin, Texas 78712 (United States); Department of Mechanical Engineering, The University of Texas at Austin, Austin, Texas 78712 (United States)

    2015-03-23

    A method for the dense integration of high sensitivity photonic crystal (PC) waveguide based biosensors is proposed and experimentally demonstrated on a silicon platform. By connecting an additional PC waveguide filter to a PC microcavity sensor in series, a transmission passband is created, containing the resonances of the PC microcavity for sensing purpose. With proper engineering of the passband, multiple high sensitivity PC microcavity sensors can be integrated into microarrays and be interrogated simultaneously between a single input and a single output port. The concept was demonstrated with a 2-channel L55 PC biosensor array containing PC waveguide filters. The experiment showed that the sensors on both channels can be monitored simultaneously from a single output spectrum. Less than 3 dB extra loss for the additional PC waveguide filter is observed.

  8. Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers.

    Science.gov (United States)

    Li, Nanxi; Magden, Emir Salih; Su, Zhan; Singh, Neetesh; Ruocco, Alfonso; Xin, Ming; Byrd, Matthew; Callahan, Patrick T; Bradley, Jonathan D B; Baiocco, Christopher; Vermeulen, Diedrik; Watts, Michael R

    2018-02-05

    Laser sources in the mid-infrared are of great interest due to their wide applications in detection, sensing, communication and medicine. Silicon photonics is a promising technology which enables these laser devices to be fabricated in a standard CMOS foundry, with the advantages of reliability, compactness, low cost and large-scale production. In this paper, we demonstrate a holmium-doped distributed feedback laser monolithically integrated on a silicon photonics platform. The Al 2 O 3 :Ho 3+ glass is used as gain medium, which provides broadband emission around 2 µm. By varying the distributed feedback grating period and Al 2 O 3 :Ho 3+ gain layer thickness, we show single mode laser emission at wavelengths ranging from 2.02 to 2.10 µm. Using a 1950 nm pump, we measure a maximum output power of 15 mW, a slope efficiency of 2.3% and a side-mode suppression ratio in excess of 50 dB. The introduction of a scalable monolithic light source emitting at > 2 µm is a significant step for silicon photonic microsystems operating in this highly promising wavelength region.

  9. Spectroscopy study of imaging devices based on silicon Pixel Array Detector coupled to VATAGP7 read-out chips

    International Nuclear Information System (INIS)

    Linhart, V; Lacasta, C; Llosa, G; Stankova, V; Burdette, D; Chessi, E; Cochran, E; Honscheid, K; Kagan, H; Weilhammer, P; Cindro, V; Grosicar, B; Mikuz, M; Studen, A; Zontar, D; Clinthorne, N H

    2011-01-01

    Spectroscopic and timing response studies have been conducted on a detector module consisting of a silicon Pixel Array Detector bonded on two VATAGP7 read-out chips manufactured by Gamma-Medica Ideas using laboratory gamma sources and the internal calibration facilities (the calibration system of the read-out chips). The performed tests have proven that the chips have (i) non-linear calibration curves which can be approximated by power functions, (ii) capability to measure the energy of photons with energy resolution better than 2 keV (exact range and resolution depend on experimental setup), (iii) the internal calibration facility which provides 6 out of 16 available internal calibration charges within our region of interest (spanning the Compton edge of 511 keV photons). The peaks induced by the internal calibration facility are suitable for a fit of the calibration curves. However, they are not suitable for measurements of equivalent noise charge because their full width at half maximum varies with their amplitude. These facts indicate that the VATAGP7 chips are useful and precise tools for a wide variety of spectroscopic devices. We have also explored time walk of the module and peaking time of the spectroscopy signals provided by the chips. We have observed that (iv) the time walk is caused partly by the peaking time of the signals provided by the fast shaper of the chips and partly by the timing uncertainty related to the varying position of the photon interaction, (v) the peaking time of the spectroscopy signals provided by the chips increases with increasing pulse height.

  10. Design of a CMOS readout circuit on ultra-thin flexible silicon chip for printed strain gauges

    Directory of Open Access Journals (Sweden)

    M. Elsobky

    2017-09-01

    Full Text Available Flexible electronics represents an emerging technology with features enabling several new applications such as wearable electronics and bendable displays. Precise and high-performance sensors readout chips are crucial for high quality flexible electronic products. In this work, the design of a CMOS readout circuit for an array of printed strain gauges is presented. The ultra-thin readout chip and the printed sensors are combined on a thin Benzocyclobutene/Polyimide (BCB/PI substrate to form a Hybrid System-in-Foil (HySiF, which is used as an electronic skin for robotic applications. Each strain gauge utilizes a Wheatstone bridge circuit, where four Aerosol Jet® printed meander-shaped resistors form a full-bridge topology. The readout chip amplifies the output voltage difference (about 5 mV full-scale swing of the strain gauge. One challenge during the sensor interface circuit design is to compensate for the relatively large dc offset (about 30 mV at 1 mA in the bridge output voltage so that the amplified signal span matches the input range of an analog-to-digital converter (ADC. The circuit design uses the 0. 5 µm mixed-signal GATEFORESTTM technology. In order to achieve the mechanical flexibility, the chip fabrication is based on either back thinned wafers or the ChipFilmTM technology, which enables the manufacturing of silicon chips with a thickness of about 20 µm. The implemented readout chip uses a supply of 5 V and includes a 5-bit digital-to-analog converter (DAC, a differential difference amplifier (DDA, and a 10-bit successive approximation register (SAR ADC. The circuit is simulated across process, supply and temperature corners and the simulation results indicate excellent performance in terms of circuit stability and linearity.

  11. Design of a CMOS readout circuit on ultra-thin flexible silicon chip for printed strain gauges

    Science.gov (United States)

    Elsobky, Mourad; Mahsereci, Yigit; Keck, Jürgen; Richter, Harald; Burghartz, Joachim N.

    2017-09-01

    Flexible electronics represents an emerging technology with features enabling several new applications such as wearable electronics and bendable displays. Precise and high-performance sensors readout chips are crucial for high quality flexible electronic products. In this work, the design of a CMOS readout circuit for an array of printed strain gauges is presented. The ultra-thin readout chip and the printed sensors are combined on a thin Benzocyclobutene/Polyimide (BCB/PI) substrate to form a Hybrid System-in-Foil (HySiF), which is used as an electronic skin for robotic applications. Each strain gauge utilizes a Wheatstone bridge circuit, where four Aerosol Jet® printed meander-shaped resistors form a full-bridge topology. The readout chip amplifies the output voltage difference (about 5 mV full-scale swing) of the strain gauge. One challenge during the sensor interface circuit design is to compensate for the relatively large dc offset (about 30 mV at 1 mA) in the bridge output voltage so that the amplified signal span matches the input range of an analog-to-digital converter (ADC). The circuit design uses the 0. 5 µm mixed-signal GATEFORESTTM technology. In order to achieve the mechanical flexibility, the chip fabrication is based on either back thinned wafers or the ChipFilmTM technology, which enables the manufacturing of silicon chips with a thickness of about 20 µm. The implemented readout chip uses a supply of 5 V and includes a 5-bit digital-to-analog converter (DAC), a differential difference amplifier (DDA), and a 10-bit successive approximation register (SAR) ADC. The circuit is simulated across process, supply and temperature corners and the simulation results indicate excellent performance in terms of circuit stability and linearity.

  12. Fundamentals and applications of on-chip interferometers based on deep-etched silicon-air multilayer reflectors

    Science.gov (United States)

    St-Gelais, Raphael

    -etched Fabry-Perot interferometer is monolithically integrated with a silicon microfluidic system and is used to measure the refractive index of homogenous liquids. The refractive index sensitivity of this interferometer (907 nm/RIU) is found to be considerably high and, interestingly, to be independent of insertion losses. A refractive index resolution among the highest reported, for volumetric sensing in microfluidic systems, is consequently achieved (1.7x10 --5 RIU), even if high insertion losses (~ 25 dB) and low resonance finesse (< 10) affect the interferometer. This sensor performs measurements in volumes (~ pL) similar to those of single living cells, and allows great flexibility in the design of monolithically integrated microfluidic systems. One of its main expected applications is consequently in-flow characterization of cell populations on-chip. Secondly, Fabry-Perot interferometers, similar to those used as refractive index sensors, are functionalized with polydimethylsiloxane (PDMS) based polymers and are used to detect two different volatile organic compounds (VOCs), i.e. m-xylene and cyclohexane. In this case, mechanical deformation of the interferometers, induced by polymer swelling upon VOCs absorption, is found to be the main sensing mechanism. Refractive index variations inside the polymers also contribute to the sensitivity, but more modestly, yielding a 10 times lower sensitivity than mechanical deformations. A 1.6 ppm resolution is reached when detecting mxylene vapor using phenyl-doped PDMS as the absorbent polymer. This limit of detection is similar to what was achieved with other micromechanical sensors that currently find applications in artificial olfaction systems. Our proposed sensor---being mass producible, simple to fabricate (two conventional photolithography steps), and simple to package (integrated optical alignment features)---could therefore potentially compete with these technologies. One of its main competitive advantages would be passive

  13. Isolating and moving single atoms using silicon nanocrystals

    Science.gov (United States)

    Carroll, Malcolm S.

    2010-09-07

    A method is disclosed for isolating single atoms of an atomic species of interest by locating the atoms within silicon nanocrystals. This can be done by implanting, on the average, a single atom of the atomic species of interest into each nanocrystal, and then measuring an electrical charge distribution on the nanocrystals with scanning capacitance microscopy (SCM) or electrostatic force microscopy (EFM) to identify and select those nanocrystals having exactly one atom of the atomic species of interest therein. The nanocrystals with the single atom of the atomic species of interest therein can be sorted and moved using an atomic force microscope (AFM) tip. The method is useful for forming nanoscale electronic and optical devices including quantum computers and single-photon light sources.

  14. Single crystal ternary oxide ferroelectric integration with Silicon

    Science.gov (United States)

    Bakaul, Saidur; Serrao, Claudy; Youun, Long; Khan, Asif; Salahuddin, Sayeef

    2015-03-01

    Integrating single crystal, ternary oxide ferroelectric thin film with Silicon or other arbitrary substrates has been a holy grail for the researchers since the inception of microelectronics industry. The key motivation is that adding ferroelectric materials to existing electronic devices could bring into new functionality, physics and performance improvement such as non-volatility of information, negative capacitance effect and lowering sub-threshold swing of field effect transistor (FET) below 60 mV/decade in FET [Salahuddin, S, Datta, S. Nano Lett. 8, 405(2008)]. However, fabrication of single crystal ferroelectric thin film demands stringent conditions such as lattice matched single crystal substrate and high processing temperature which are incompatible with Silicon. Here we report on successful integration of PbZr0.2Ti0.8O3 in single crystal form with by using a layer transfer method. The lattice structure, surface morphology, piezoelectric coefficient d33, dielectric constant, ferroelectric domain switching and spontaneous and remnant polarization of the transferred PZT are as good as these characteristics of the best PZT films grown by pulsed laser deposition on lattice matched oxide substrates. We also demonstrate Si based, FE gate controlled FET devices.

  15. Efficient Generation of an Array of Single Silicon-Vacancy Defects in Silicon Carbide

    Science.gov (United States)

    Wang, Junfeng; Zhou, Yu; Zhang, Xiaoming; Liu, Fucai; Li, Yan; Li, Ke; Liu, Zheng; Wang, Guanzhong; Gao, Weibo

    2017-06-01

    Color centers in silicon carbide have increasingly attracted attention in recent years owing to their excellent properties such as single-photon emission, good photostability, and long spin-coherence time even at room temperature. As compared to diamond, which is widely used for hosting nitrogen-vacancy centers, silicon carbide has an advantage in terms of large-scale, high-quality, and low-cost growth, as well as an advanced fabrication technique in optoelectronics, leading to prospects for large-scale quantum engineering. In this paper, we report an experimental demonstration of the generation of a single-photon-emitter array through ion implantation. VSi defects are generated in predetermined locations with high generation efficiency (approximately 19 % ±4 % ). The single emitter probability reaches approximately 34 % ±4 % when the ion-implantation dose is properly set. This method serves as a critical step in integrating single VSi defect emitters with photonic structures, which, in turn, can improve the emission and collection efficiency of VSi defects when they are used in a spin photonic quantum network. On the other hand, the defects are shallow, and they are generated about 40 nm below the surface which can serve as a critical resource in quantum-sensing applications.

  16. The tensile effect on crack formation in single crystal silicon irradiated by intense pulsed ion beam

    Science.gov (United States)

    Liang, Guoying; Shen, Jie; Zhang, Jie; Zhong, Haowen; Cui, Xiaojun; Yan, Sha; Zhang, Xiaofu; Yu, Xiao; Le, Xiaoyun

    2017-10-01

    Improving antifatigue performance of silicon substrate is very important for the development of semiconductor industry. The cracking behavior of silicon under intense pulsed ion beam irradiation was studied by numerical simulation in order to understand the mechanism of induced surface peeling observed by experimental means. Using molecular dynamics simulation based on Stillinger Weber potential, tensile effect on crack growth and propagation in single crystal silicon was investigated. Simulation results reveal that stress-strain curves of single crystal silicon at a constant strain rate can be divided into three stages, which are not similar to metal stress-strain curves; different tensile load velocities induce difference of single silicon crack formation speed; the layered stress results in crack formation in single crystal silicon. It is concluded that the crack growth and propagation is more sensitive to strain rate, tensile load velocity, stress distribution in single crystal silicon.

  17. A Single-Chip Solar Energy Harvesting IC Using Integrated Photodiodes for Biomedical Implant Applications.

    Science.gov (United States)

    Chen, Zhiyuan; Law, Man-Kay; Mak, Pui-In; Martins, Rui P

    2017-02-01

    In this paper, an ultra-compact single-chip solar energy harvesting IC using on-chip solar cell for biomedical implant applications is presented. By employing an on-chip charge pump with parallel connected photodiodes, a 3.5 × efficiency improvement can be achieved when compared with the conventional stacked photodiode approach to boost the harvested voltage while preserving a single-chip solution. A photodiode-assisted dual startup circuit (PDSC) is also proposed to improve the area efficiency and increase the startup speed by 77%. By employing an auxiliary charge pump (AQP) using zero threshold voltage (ZVT) devices in parallel with the main charge pump, a low startup voltage of 0.25 V is obtained while minimizing the reversion loss. A 4 V in gate drive voltage is utilized to reduce the conduction loss. Systematic charge pump and solar cell area optimization is also introduced to improve the energy harvesting efficiency. The proposed system is implemented in a standard 0.18- [Formula: see text] CMOS technology and occupies an active area of 1.54 [Formula: see text]. Measurement results show that the on-chip charge pump can achieve a maximum efficiency of 67%. With an incident power of 1.22 [Formula: see text] from a halogen light source, the proposed energy harvesting IC can deliver an output power of 1.65 [Formula: see text] at 64% charge pump efficiency. The chip prototype is also verified using in-vitro experiment.

  18. Poly-silicon quantum-dot single-electron transistors

    International Nuclear Information System (INIS)

    Kang, Kwon-Chil; Lee, Joung-Eob; Lee, Jung-Han; Lee, Jong-Ho; Shin, Hyung-Cheol; Park, Byung-Gook

    2012-01-01

    For operation of a single-electron transistors (SETs) at room temperature, we proposed a fabrication method for a SET with a self-aligned quantum dot by using polycrystalline silicon (poly-Si). The self-aligned quantum dot is formed by the selective etching of a silicon nanowire on a planarized surface and the subsequent deposition and etch-back of poly-silicon or chemical mechanical polishing (CMP). The two tunneling barriers of the SET are fabricated by thermal oxidation. Also, to decrease the leakage current and control the gate capacitance, we deposit a hard oxide mask layer. The control gate is formed by using an electron beam and photolithography on chemical vapor deposition (CVD). Owing to the small capacitance of the narrow control gate due to the tetraethyl orthosilicate (TEOS) hard mask, we observe clear Coulomb oscillation peaks and differential trans-conductance curves at room temperature. The clear oscillation period of the fabricated SET is 2.0 V.

  19. ODMR of single point defects in silicon nanostructures

    Energy Technology Data Exchange (ETDEWEB)

    Bagraev, Nikolay; Danilovsky, Eduard; Gets, Dmitry; Klyachkin, Leonid; Kudryavtsev, Andrey; Kuzmin, Roman; Malyarenko, Anna [Ioffe Physical-Technical Institute, Polytekhnicheskaya st. 26, 194021 St. Petersburg (Russian Federation)

    2012-05-15

    We present the findings of the optically detected magnetic resonance technique (ODMR), which reveal single point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor {delta}-barriers. This technique allows the ODMR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring the transmission spectra within the frameworks of the excitonic normal-mode coupling caused by the microcavities embedded in the Si-QW plane. (copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  20. On-chip single photon filtering and multiplexing in hybrid quantum photonic circuits.

    Science.gov (United States)

    Elshaari, Ali W; Zadeh, Iman Esmaeil; Fognini, Andreas; Reimer, Michael E; Dalacu, Dan; Poole, Philip J; Zwiller, Val; Jöns, Klaus D

    2017-08-30

    Quantum light plays a pivotal role in modern science and future photonic applications. Since the advent of integrated quantum nanophotonics different material platforms based on III-V nanostructures-, colour centers-, and nonlinear waveguides as on-chip light sources have been investigated. Each platform has unique advantages and limitations; however, all implementations face major challenges with filtering of individual quantum states, scalable integration, deterministic multiplexing of selected quantum emitters, and on-chip excitation suppression. Here we overcome all of these challenges with a hybrid and scalable approach, where single III-V quantum emitters are positioned and deterministically integrated in a complementary metal-oxide-semiconductor-compatible photonic circuit. We demonstrate reconfigurable on-chip single-photon filtering and wavelength division multiplexing with a foot print one million times smaller than similar table-top approaches, while offering excitation suppression of more than 95 dB and efficient routing of single photons over a bandwidth of 40 nm. Our work marks an important step to harvest quantum optical technologies' full potential.Combining different integration platforms on the same chip is currently one of the main challenges for quantum technologies. Here, Elshaari et al. show III-V Quantum Dots embedded in nanowires operating in a CMOS compatible circuit, with controlled on-chip filtering and tunable routing.

  1. Mutiple Czochralski growth of silicon crystals from a single crucible

    Science.gov (United States)

    Lane, R. L.; Kachare, A. H.

    1980-01-01

    An apparatus for the Czochralski growth of silicon crystals is presented which is capable of producing multiple ingots from a single crucible. The growth chamber features a refillable crucible with a water-cooled, vacuum-tight isolation valve located between the pull chamber and the growth furnace tank which allows the melt crucible to always be at vacuum or low argon pressure when retrieving crystal or introducing recharge polysilicon feed stock. The grower can thus be recharged to obtain 100 kg of silicon crystal ingots from one crucible, and may accommodate crucibles up to 35 cm in diameter. Evaluation of the impurity contents and I-V characteristics of solar cells fabricated from seven ingots grown from two crucibles reveals a small but consistent decrease in cell efficiency from 10.4% to 9.6% from the first to the fourth ingot made in a single run, which is explained by impurity build-up in the residual melt. The crystal grower thus may offer economic benefits through the extension of crucible lifetime and the reduction of furnace downtime.

  2. Chip-integrated plasmonic cavity-enhanced single nitrogen-vacancy center emission

    DEFF Research Database (Denmark)

    Siampour, Hamidreza; Kumar, Shailesh; Bozhevolnyi, Sergey I.

    2017-01-01

    High temporal stability and spin dynamics of individual nitrogen-vacancy (NV) centers in diamond crystals make them one of the most promising quantum emitters operating at room temperature. We demonstrate a chip-integrated cavity-coupled emission into propagating surface plasmon polariton (SPP......-beam lithography of hydrogen silsesquioxane resist deposited on silver-coated silicon substrates. A quality factor of ∼70 for the cavity (full width at half maximum ∼10 nm) with full tunability of the resonance wavelength is demonstrated. An up to 42-fold decay rate enhancement of the spontaneous emission...

  3. On-Chip Single-Plasmon Nanocircuit Driven by a Self-Assembled Quantum Dot.

    Science.gov (United States)

    Wu, Xiaofei; Jiang, Ping; Razinskas, Gary; Huo, Yongheng; Zhang, Hongyi; Kamp, Martin; Rastelli, Armando; Schmidt, Oliver G; Hecht, Bert; Lindfors, Klas; Lippitz, Markus

    2017-07-12

    Quantum photonics holds great promise for future technologies such as secure communication, quantum computation, quantum simulation, and quantum metrology. An outstanding challenge for quantum photonics is to develop scalable miniature circuits that integrate single-photon sources, linear optical components, and detectors on a chip. Plasmonic nanocircuits will play essential roles in such developments. However, for quantum plasmonic circuits, integration of stable, bright, and narrow-band single photon sources in the structure has so far not been reported. Here we present a plasmonic nanocircuit driven by a self-assembled GaAs quantum dot. Through a planar dielectric-plasmonic hybrid waveguide, the quantum dot efficiently excites narrow-band single plasmons that are guided in a two-wire transmission line until they are converted into single photons by an optical antenna. Our work demonstrates the feasibility of fully on-chip plasmonic nanocircuits for quantum optical applications.

  4. Single-layer graphene on silicon nitride micromembrane resonators

    Energy Technology Data Exchange (ETDEWEB)

    Schmid, Silvan; Guillermo Villanueva, Luis; Amato, Bartolo; Boisen, Anja [Department of Micro- and Nanotechnology, Technical University of Denmark, DTU Nanotech, Building 345 East, 2800 Kongens Lyngby (Denmark); Bagci, Tolga; Zeuthen, Emil; Sørensen, Anders S.; Usami, Koji; Polzik, Eugene S. [QUANTOP, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Taylor, Jacob M. [Joint Quantum Institute/NIST, College Park, Maryland 20899 (United States); Herring, Patrick K.; Cassidy, Maja C. [School of Engineering and Applied Science, Harvard University, Cambridge, Massachusetts 02138 (United States); Marcus, Charles M. [Center for Quantum Devices, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen (Denmark); Cheol Shin, Yong; Kong, Jing [Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 (United States)

    2014-02-07

    Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene.

  5. Creating and Controlling Single Spins in Silicon Carbide

    Science.gov (United States)

    Christle, David

    Silicon carbide (SiC) is a well-established commercial semiconductor used in high-power electronics, optoelectronics, and nanomechanical devices, and has recently shown promise for semiconductor-based implementations of quantum information technologies. In particular, a set of divacancy-related point defects have improved coherence properties relative to the prominent nitrogen-vacancy center in diamond, are addressable at near-telecom wavelengths, and reside in a material for which there already exist advanced growth, doping, and microfabrication capabilities. These properties suggest divacancies in SiC have compelling advantages for photonics and micromechanical applications, yet their relatively recent discovery means crucial aspects of their fundamental physics for these applications are not well understood. I will review our progress on manipulating spin defects in SiC, and discuss efforts towards isolating and controlling them at the single defect limit. In particular, our most recent experimental results demonstrate isolation and control of long-lived (T2 = 0 . 9 ms) divacancies in a form of SiC that can be grown epitaxially on silicon. By studying the time-resolved photoluminescence of a single divacancy, we reveal its fundamental orbital structure and characterize in detail the dynamics of its special optical cycle. Finally, we probe individual divacancies using resonant laser techniques and reveal an efficient spin-photon interface with figures of merit comparable to those reported for NV centers in diamond. These results suggest a pathway towards photon-mediated entanglement of SiC defect spins over long distances. This work was supported by NSF, AFOSR, the Argonne CNM, the Knut & Alice Wallenberg Foundation, the Linköping Linnaeus Initiative, the Swedish Government Strategic Research Area, and the Ministry of Education, Science, Sports and Culture of Japan.

  6. RBS/channeling analysis of hydrogen-implanted single crystals of FZ silicon and 6H silicon

    International Nuclear Information System (INIS)

    Irwin, R.B.

    1984-01-01

    Single crystals of FZ silicon and 6H silicon carbide were implanted with hydrogen ions (50 and 80 keV, respectively) to fluences from 2 x 10 16 H + /cm 2 to 2 x 10 18 H+/cm 2 . The implantations were carried out at three temperatures: approx.95K, 300 K, and approx.800 K. Swelling of the samples was measured by surface profilometry. RBS/channeling was used to obtain the damage profiles and to determine the amount of hydrogen retained in the lattice. The damage profiles are centered around X/sub m/ for the implants into silicon and around R/sub p/ for silicon carbide. For silicon carbide implanted at 95 K and 300 K and for silicon implanted at 95 K, the peak damage region is amorphous for fluences above 8 x 10 16 H + /cm 2 , 4 x 10 17 H + /cm 2 , and 2 x 10 17 H + /cm 2 , respectively. Silicon implanted at 300 and 800 K and silicon carbide implanted at 800 K remain crystalline up to fluences of 1 x 10 18 H + /cm 2 . The channeling damage results agree with previously reported TEM and electron diffraction data. The predictions of a simple disorder-accumulation model with a linear annealing term explains qualitatively the observed damage profiles in silicon carbide. Quantitatively, however, the model predicts faster development of the damage profiles than is observed at low fluences in both silicon and silicon carbide. For samples implanted at 300 and 800 K, the model also predicts substantially less peak disorder than is observed. The effect of the surface, the retained hydrogen, the shape of S/sub D/(X), and the need for a nonlinear annealing term may be responsible for the discrepancy

  7. Single lens photometric machine vision with 3D imaging for fiber-to-chip coupling.

    Science.gov (United States)

    Liu, Xu; Hu, Hongmei; Sun, Xiaohan

    2012-03-01

    A single lens photometric machine vision (SLPMV) optical microbench is presented and built for fiber-to-chip coupling. By a rotation mechanics in SLPMV, the multi-view-camera can scan the various surface status of the chips coupled. To realize 3D imaging more explicitly, the modified photometric stereo algorithm is proposed through acquiring the images of weak saturation, matching the scanning illuminative angles, and rectifying rectangularly the original images. The reconstructed images have had similar qualities as those obtained by scanning electron microscopy and have unveiled the detailed information obscured in the 2D images. For the InP-based optical waveguide chip coupled with wedge-shaped fiber, the insertion loss tested on the SLPMV is 3 dB less than one on the conventional testing station. The SLPMV could serve as a more cost-effective and compact scientific observation instrumentation in imaging informatics than commercial ones.

  8. Large On-Chip Amplification in Silicon via Forward Stimulated Brillouin Scattering.

    Energy Technology Data Exchange (ETDEWEB)

    Kittlaus, Eric [Yale Univ., New Haven, CT (United States); Shin, Heedeuk [Yale Univ., New Haven, CT (United States); Rakich, Peter [Yale Univ., New Haven, CT (United States)

    2015-10-15

    Strong Brillouin coupling has only recently been realized in silicon using a new class of op- tomechanical waveguides that yield both optical and phononic con nement. Despite these major advances, appreciable Brillouin ampli cation has yet to be observed in silicon. Using new membrane- suspended silicon waveguide we report large Brillouin ampli cation for the rst time, reaching levels greater than 5 dB for modest pump powers, and demonstrate a record low (5 mW) threshold for net ampli cation. This work represents a crucial advance necessary to realize high-performance Brillouin lasers and ampli ers in silicon.

  9. Design of Water Temperature Control System Based on Single Chip Microcomputer

    Science.gov (United States)

    Tan, Hanhong; Yan, Qiyan

    2017-12-01

    In this paper, we mainly introduce a multi-function water temperature controller designed with 51 single-chip microcomputer. This controller has automatic and manual water, set the water temperature, real-time display of water and temperature and alarm function, and has a simple structure, high reliability, low cost. The current water temperature controller on the market basically use bimetal temperature control, temperature control accuracy is low, poor reliability, a single function. With the development of microelectronics technology, monolithic microprocessor function is increasing, the price is low, in all aspects of widely used. In the water temperature controller in the application of single-chip, with a simple design, high reliability, easy to expand the advantages of the function. Is based on the appeal background, so this paper focuses on the temperature controller in the intelligent control of the discussion.

  10. Generation and Controlled Routing of Single Plasmons on a Chip

    DEFF Research Database (Denmark)

    Kumar, Shailesh; Israelsen, Niels Møller; Huck, Alexander

    2014-01-01

    We demonstrate the excitation of single surface plasmon polaritons on a silver nanowire using a nitrogen vacancy center and the subsequent controlled coupling to a second silver nanowire. The coupling efficiency and thus the splitting ratio between the nanowires is controlled by adjusting the gap...

  11. High-resolution strain sensing on steel by Silicon-On-Insulator flexural resonators fabricated with chip-level vacuum packaging

    OpenAIRE

    Belsito, Luca; Ferri, Matteo; Mancarella, Fulvio; Roncaglia, Alberto; Yan, Jize; Seshia, A. Ashwin; Soga, Kenichi

    2013-01-01

    This paper reports on the fabrication and characterization of high-resolution strain sensors for steel based on Silicon On Insulator flexural resonators manufactured with chip-level LPCVD vacuum packaging. The sensors present high sensitivity (120 Hz/??), very high resolution (4 n?), low drift, and near-perfect reversibility in bending tests performed in both tensile and compressive strain regimes.

  12. Four-port mode-selective silicon optical router for on-chip optical interconnect.

    Science.gov (United States)

    Jia, Hao; Zhou, Ting; Fu, Xin; Ding, Jianfeng; Zhang, Lei; Yang, Lin

    2018-04-16

    We propose and demonstrate a four-port mode-selective optical router on a silicon-on-insulator platform. The passive routing property ensures that the router consumes no power to establish the optical links. For each port, input signals with different modes are selectively routed to the target ports through the pre-designed architecture. In general, the device intrinsically supports broadcasting of multiplexed signals from one port to the other three ports through mode division multiplexing. In some applications, the input signal from one port would only be sent to another port as in reconfigurable optical routers. The prototype is constructed by mode multiplexers/de-multiplexers and single-mode interconnect waveguides between them. The insertion losses for all optical links are lower than 8.0 dB, and the largest optical crosstalk values are lower than -18.7 dB and -22.0 dB for the broadcasting and port-to-port routing modes, respectively, at the wavelength range of 1525-1565 nm. In order to verify the routing functionality, a 40-Gbps bidirectional data transmission experiment is performed. The device offers a promising building block for passive routing by utilizing the dimension of the modes.

  13. Design and Characterization of 64K Pixels Chips Working in Single Photon Processing Mode

    CERN Document Server

    Llopart Cudie, Xavier; Campbell, M

    2007-01-01

    Progress in CMOS technology and in fine pitch bump bonding has made possible the development of high granularity single photon counting detectors for X-ray imaging. This thesis studies the design and characterization of three pulse processing chips with 65536 square pixels of 55 µm x 55 µm designed in a commercial 0.25 µm 6-metal CMOS technology. The 3 chips share the same architecture and dimensions and are named Medipix2, Mpix2MXR20 and Timepix. The Medipix2 chip is a pixel detector readout chip consisting of 256 x 256 identical elements, each working in single photon counting mode for positive or negative input charge signals. The preamplifier feedback provides compensation for detector leakage current on a pixel by pixel basis. Two identical pulse height discriminators are used to define an energy window. Every event falling inside the energy window is counted with a 13 bit pseudo-random counter. The counter logic, based in a shift register, also behaves as the input/output register for the pixel. Each...

  14. Energy transfer phenomena and radiative processes in silicon nitride based materials for on-chip photonics applications

    Science.gov (United States)

    Li, Rui

    Rare-earth (RE) doping of silicon-based structures provides a valuable approach for light-emitting devices which could be monolithically integrated atop the widespread silicon electronics platform and enables inexpensive integration of on-chip optical components. However, the small excitable fraction of RE ions and the substantial free carrier losses in Si nanostructures severely limit the possibility to achieve net optical gain using traditional Er doped materials, such as Er doped Si-rich oxides (Er:SRO). On the other hand, a novel material platform based on RE-doped silicon nitride (RE:Six) materials has recently revealed unique advantages for on-chip light source. Based on a variety of light emission spectroscopic techniques and rate equation modeling, light emission and energy transfer phenomena were studied to quantitatively assess the benefits of the novel Er and Nd doped SiNx (Er: SiN x and Nd:SiNx) material platform compared to the standard Er:SRO. Efficient energy transfer and nanosecond-time dynamics from SiN x matrices to RE ions with two orders of magnitude larger coupling coefficient than Er:SRO were demonstrated for the first time. The origin of this energy transfer was shown to consist of non-resonant phonon-mediated coupling by temperature-dependent experiments. In addition, a tradeoff between excitation efficiency by energy transfer and emission efficiency, determined by excess Si concentration, was discovered and studied. Although carrier absorption and non-radiative recombination jeopardize the observation of optical gain, differential loss measurements under femtosecond pulsed excitation resulted in the bleaching of the Er ground state absorption by energy transfer in Er:SiN x materials, which bears great hope for the engineering of Si-based lasers. On the other hand, with a superior 4-level system, Nd:SiNx is promising to lase with a lower threshold. To make use of the better field confinement in SiNx due to its higher refractive index, RE

  15. Ring resonator-based single-chip 1x8 optical beam forming network in LPCVD waveguide technology

    NARCIS (Netherlands)

    Zhuang, L.; Roeloffzen, C.G.H.; Heideman, Rene; Borreman, A.; Meijerink, Arjan; van Etten, Wim; Koonen, A.M.J.; Leijtens, X.J.M.; van den Boom, H.P.A.; Verdurmen, E.J.M.; Molina Vázquez, J.

    2006-01-01

    Optical ring resonators (ORRs) are good candidates to provide continuously tunable delay in beam forming networks (BFNs) for phased array antenna systems. Delay and splitting/combining elements can be integrated on a single optical chip to form an OBFN. A state-of-the-art 1×8 OBFN chip has been

  16. Optimized antimicrobial peptide (Bacitracin) production by immobilized and free cells and of Bacillus Spp GU215 using Wood chips and silicon polymer beads.

    Science.gov (United States)

    Amin, Adnan; Khan, Muhammad Ayaz; Ahmad, Taufeeq

    2013-11-01

    The immobilization of bacillus spp. GU215 on silicon polymer beads, wood chips was performed and antibiotic peptide (bacitracin) production, optimization of parameters were investigated. The immobilized cells presented elevated levels of activity than free cells. The silicon polymer based cells showed widest zones of inhibitions (18mm) in 72 hours and 4% concentration of glucose, PH 8 and 30°C, whereas a marginal decrease in the activity (14mm) was noticed in case of wood chips based immobilization systems and least stable immobilization in 72 hours incubation time, 4% glucose concentration, PH 8 and 30°C. This study illustrates that the silicon polymer based beads facilitate a strong interactions with bacitracin producing cells and render them suitable for excessive and long time production of antibiotic.

  17. Single-chip correlator implementation for PCI-bus personal computers

    Science.gov (United States)

    O'Callaghan, Michael J.; Perlmutter, Stephen H.; Wolt, Barry

    2000-03-01

    We have previously reported on the design and operation of a novel single-chip optical correlator prototype. Two ferroelectric liquid crystal SLMs and a high-speed APS camera were built into a single CMOS integrated circuit. Diffractive Fourier transform lenses were fabricated onto the surface of a window which was mounted on top of the chip. We are now working towards implementing the correlator as a business card-sized module mounted on a PCI card which can be plugged into the motherboard of industry standard PCs. We are also upgrading the SLMs to have analog optical modulation capability. The PCI card contains input and output image buffers, plus high-speed circuitry which digitizes the four analog output channels of the correlator's camera. This paper describes the system we are developing, some of the electronic and optical engineering issues involved, and the present status of our work.

  18. Volumetric imaging using single chip integrated CMUT-on-CMOS IVUS array.

    Science.gov (United States)

    Tekes, Coskun; Zahorian, Jaime; Gurun, Gokce; Satir, Sarp; Xu, Toby; Hochman, Michael; Degertekin, F Levent

    2012-01-01

    An intravascular ultrasound (IVUS) catheter that can provide forward viewing volumetric ultrasound images would be an invaluable clinical tool for guiding interventions. Single chip integration of front-end electronics with capacitive micromachined ultrasonic transducers (CMUTs) is highly desirable to reduce the interconnection complexity and enable miniaturization in IVUS catheters. For this purpose we use the monolithic CMUT-on-CMOS integration where CMUTs are fabricated directly on top of pre-processed CMOS wafers. This minimizes parasitic capacitances associated with connection lines. We have recently implemented a system design including all the required electronics using 0.35-µm CMOS process integrated with a 1.4-mm diameter CMUT array. In this study, we present the experimental volumetric imaging results from an ex-vivo chicken heart phantom. The imaging results demonstrate that the single-chip forward looking IVUS (FL-IVUS) system with monolithically integrated electronics has potential to visualize the front view of coronary arteries.

  19. Tunable Squeezing Using Coupled Ring Resonators on a Silicon Nitride Chip

    Science.gov (United States)

    2018-01-16

    can be harnessed for on-chip quantum enhanced sensing protocols which require an optimal degree of squeezing. U U Tunable Squeezing Using Coupled Ring...Lipson1, 4 1School of Electrical and Computer Engineering, Cornell University, Ithaca, NY 14853, USA 2School of Applied and Engineering Physics...squeezing factor from 0.9 dB to 3.9 dB. Such wide tunability in the squeezing level can be harnessed for on-chip quantum enhanced sensing protocols

  20. A simple and controlled single electron transistor based on doping modulation in silicon nanowires

    OpenAIRE

    Hofheinz, M.; Jehl, X.; Sanquer, M.; Molas, G.; Vinet, M.; Deleonibus, S.

    2006-01-01

    A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel of the transistor is the Coulomb island at low temperature. Two silicon nitride spacers deposited on each side of the gate create a modulation of doping along the nanowire that creates tunnel barriers. Such barriers are fixed and controlled, like in metallic...

  1. Buckling of Single-Crystal Silicon Nanolines under Indentation

    Directory of Open Access Journals (Sweden)

    Min K. Kang

    2008-01-01

    Full Text Available Atomic force microscope-(AFM- based indentation tests were performed to examine mechanical properties of parallel single-crystal silicon nanolines (SiNLs of sub-100-nm line width, fabricated by a process combining electron-beam lithography and anisotropic wet etching. The SiNLs have straight and nearly atomically flat sidewalls, and the cross section is almost perfectly rectangular with uniform width and height along the longitudinal direction. The measured load-displacement curves from the indentation tests show an instability with large displacement bursts at a critical load ranging from 480 μN to 700 μN. This phenomenon is attributed to a transition of the buckling mode of the SiNLs under indentation. Using a set of finite element models with postbuckling analyses, we analyze the indentation-induced buckling modes and investigate the effects of tip location, contact friction, and substrate deformation on the critical load of mode transition. The results demonstrate a unique approach for the study of nanomaterials and patterned nanostructures via a combination of experiments and modeling.

  2. Rare-earth-ion-doped dielectric waveguides on a silicon chip: Fabrication, spectroscopy, amplification, and lasing

    NARCIS (Netherlands)

    Pollnau, Markus

    Miniaturization and on-chip integration of high-performance light sources have become major issues for the progress in integrated optics. Over the past decades semiconductor amplifiers and lasers have emerged as the most-preferred choice. However, spatial and temporal gain-patterning effects evoked

  3. A novel single-step, multipoint calibration method for instrumented Lab-on-Chip systems

    DEFF Research Database (Denmark)

    Pfreundt, Andrea; Patou, François; Zulfiqar, Azeem

    2014-01-01

    Despite recent and substantial advances in biosensing, information and communication, and Lab-on-Chip (LoC) technologies, the success of Point-of-Care (PoC) diagnostics and monitoring systems is still challenged by stringent requirements for robustness, cost-effectiveness, and system integration....... The pitfalls of PoC system adoption can be addressed early in the system design phase. They require a multidisciplinary design approach supported by systems engineering tools and methods. Considering this, we here present both a model and an implementation of a simple and rapid calibration scheme...... for instrument-based PoC blood biomarker analysis systems. Motivated by the complexity of associating high-accuracy biosensing using silicon nanowire field effect transistors with ease of use for the PoC system user, we propose a novel one-step, multipoint calibration method for LoC-based systems. Our approach...

  4. Fully Printed Flexible Single-Chip RFID Tag with Light Detection Capabilities

    Directory of Open Access Journals (Sweden)

    Aniello Falco

    2017-03-01

    Full Text Available A printed passive radiofrequency identification (RFID tag in the ultra-high frequency band for light and temperature monitoring is presented. The whole tag has been manufactured by printing techniques on a flexible substrate. Antenna and interconnects are realized with silver nanoparticles via inkjet printing. A sprayed photodetector performs the light monitoring, whereas temperature measurement comes from an in-built sensor in the silicon RFID chip. One of the advantages of this system is the digital read-out and transmission of the sensors information on the RFID tag that ensures reliability. Furthermore, the use of printing techniques allows large-scale manufacturing and the direct fabrication of the tag on the desired surface. This work proves for the first time the feasibility of the embedment of large-scale organic photodetectors onto inkjet printed RFID tags. Here, we solve the problem of integration of different manufacturing techniques to develop an optimal final sensor system.

  5. Single Chip Lidar with Discrete Beam Steering by Digital Micromirror Device

    Science.gov (United States)

    Smith, Braden

    A novel method of beam steering that utilizes a mass-produced Digital Micromirror Device (DMD) enables a large field of view and reliable single chip Light Detection and Ranging (LIDAR). Using a short pulsed laser, the micromirrors' rotation is frozen mid-transition which forms a programmable blazed grating which efficiently redistributes the light to a single diffraction order, among several. With a nanosecond 905nm laser and Si avalanche photo diode, measurement accuracy of range and with a 48° full field of view.

  6. Sorting and measurement of single gold nanoparticles in an optofluidic chip

    Science.gov (United States)

    Shi, Y. Z.; Xiong, S.; Zhang, Y.; Chin, L. K.; Wu, J. H.; Chen, T. N.; Liu, A. Q.

    2017-08-01

    Gold nanoparticles have sparked strong interest owing to their unique optical and chemical properties. Their sizedependent refractive index and plasmon resonance are widely used for optical sorting, biomedicine and chemical sensing. However, there are only few examples of optical separation of different gold nanoparticles. Only separating 100-200 nm gold nanoparticles using wavelength selected resonance of the extinction spectrum has been demonstrated. This paper reports an optofluidic chip for sorting single gold nanoparticles using loosely overdamped optical potential wells, which are created by building optical and fluidic barriers. It is the first demonstration of sorting single nanoparticles with diameters ranging from 60 to 100 nm in a quasi-Bessel beam with an optical trapping stiffness from 10-10 to 10-9 N/m. The nanoparticles oscillate in the loosely overdamped potential wells with a displacement amplitude of 3-7 μm in the microchannel. The sizes and refractive indices of the nanoparticles can be determined from their trapping positions using Drude and Mie theory, with a resolution of 0.35 nm/μm for the diameter, 0.0034/μm and 0.0017/μm for the real and imaginary parts of the refractive index, respectively. Here we experimentally demonstrate the sorting of bacteria and protozoa on the optofluidic chip. The chip has high potential for the sorting and characterization of nanoparticles in biomedical applications such as tumour targeting, drug delivery and intracellular imaging.

  7. Single chip system LSI for digital still camera signal processing; Doga taio digital still camera yo shingo shori one chip

    Energy Technology Data Exchange (ETDEWEB)

    Yamada, T.; Okada, S.; Kobayashi, A.; Komura, Y.; Kiyozaki, K. [Sanyo Electric Co. Ltd., Osaka (Japan)

    1998-11-01

    This paper introduces the summary of development of a single chip system LSI for digital still camera (DSC) signal real-time processing, which can deal with animation. In developing the LSI, a DSC was identified as a system device, and the target was set to developing a system LSI capable of processing all of the signals from the DSC. In the real-time signal processing, signal processing of animated images and still images with less shutter waiting time was realized by mounting a dedicated M-JPEC core and by signal-processing contraction and elongation of the JPEG with the hardware at high speed. Writing and reading at higher speeds into and from image buffer memories to reduce the shutter waiting time and higher speed transfer of image data were realized by making a dual path architecture inside the LSI. Other functions performed by the software in the built-in RISC core include recording and replaying of voice, preparation of AVI files to replay the images on home-use TV sets, and a window function for DSC to synthesize still images. 7 refs., 8 figs., 2 tabs.

  8. All-in-polymer injection molded device for single cell capture using multilevel silicon master fabrication

    DEFF Research Database (Denmark)

    Tanzi, S.; Larsen, S.T.; Matteucci, M.

    2012-01-01

    This work demonstrates a novel all-in-polymer device for single cell capture applicable for biological recordings. The chip is injection molded and comprises a "cornered" (non planar) aperture. It has been demonstrated how cornered apertures are straightforward to mold in PDMS [1,2]. In this stud...... defects during demolding. Capturing of single PC12 cells has been demonstrated.......This work demonstrates a novel all-in-polymer device for single cell capture applicable for biological recordings. The chip is injection molded and comprises a "cornered" (non planar) aperture. It has been demonstrated how cornered apertures are straightforward to mold in PDMS [1,2]. In this study...

  9. A superhydrophobic chip based on SU-8 photoresist pillars suspended on a silicon nitride membrane

    KAUST Repository

    Marinaro, Giovanni

    2014-07-28

    We developed a new generation of superhydrophobic chips optimized for probing ultrasmall sample quantities by X-ray scattering and fluorescence techniques. The chips are based on thin Si3N4 membranes with a tailored pattern of SU-8 photoresist pillars. Indeed, aqueous solution droplets can be evaporated and concentrated at predefined positions using a non-periodic pillar pattern. We demonstrated quantitatively the deposition and aggregation of gold glyconanoparticles from the evaporation of a nanomolar droplet in a small spot by raster X-ray nanofluorescence. Further, raster nanocrystallography of biological objects such as rod-like tobacco mosaic virus nanoparticles reveals crystalline macro-domain formation composed of highly oriented nanorods. © 2014 the Partner Organisations.

  10. Separation and Analysis of Adherent and Non-Adherent Cancer Cells Using a Single-Cell Microarray Chip.

    Science.gov (United States)

    Yamamura, Shohei; Yamada, Eriko; Kimura, Fukiko; Miyajima, Kumiko; Shigeto, Hajime

    2017-10-21

    A new single-cell microarray chip was designed and developed to separate and analyze single adherent and non-adherent cancer cells. The single-cell microarray chip is made of polystyrene with over 60,000 microchambers of 10 different size patterns (31-40 µm upper diameter, 11-20 µm lower diameter). A drop of suspension of adherent carcinoma (NCI-H1650) and non-adherent leukocyte (CCRF-CEM) cells was placed onto the chip, and single-cell occupancy of NCI-H1650 and CCRF-CEM was determined to be 79% and 84%, respectively. This was achieved by controlling the chip design and surface treatment. Analysis of protein expression in single NCI-H1650 and CCRF-CEM cells was performed on the single-cell microarray chip by multi-antibody staining. Additionally, with this system, we retrieved positive single cells from the microchambers by a micromanipulator. Thus, this system demonstrates the potential for easy and accurate separation and analysis of various types of single cells.

  11. Single-Cell Chemical Lysis on Microfluidic Chips with Arrays of Microwells

    Directory of Open Access Journals (Sweden)

    Nikolay A. Maslov

    2011-12-01

    Full Text Available Many conventional biochemical assays are performed using populations of cells to determine their quantitative biomolecular profiles. However, population averages do not reflect actual physiological processes in individual cells, which occur either on short time scales or nonsynchronously. Therefore, accurate analysis at the single-cell level has become a highly attractive tool for investigating cellular content. Microfluidic chips with arrays of microwells were developed for single-cell chemical lysis in the present study. The cellular occupancy in 30-mm-diameter microwells (91.45% was higher than that in 20-mm-diameter microwells (83.19% at an injection flow rate of 2.8 mL/min. However, most of the occupied 20-mm-diameter microwells contained individual cells. The results of chemical lysis experiments at the single-cell level indicate that cell membranes were gradually lysed as the lysis buffer was injected; they were fully lysed after 12 s. Single-cell chemical lysis was demonstrated in the proposed microfluidic chip, which is suitable for high-throughput cell lysis.

  12. A Readout Chip for a 64 x 64 Pixel Matrix with 15-bit Single Photon Counting

    CERN Document Server

    Campbell, M; Meddeler, G; Pernigotti, E; Snoeys, W

    1998-01-01

    A single Photon Counting pixel detector readout Chip (PCC) has been derived from previous work in the CERN RD19 collaboration for particle physics tracking devices, recently developed for high energy physics experiments. The readout chip is a 64 x 64 matrix of identical 170mm x 170mm cells. It is to be bump-bonded to an equally segmented 1 cm2 matrix of semiconductor sensors, e.g. Si or GaAs. Each readout cell comprises a preamplifier, a discriminator and a 15-bit counter. The input noise is 170 e- rms. At the lowest nominal threshold of 1 400 e- (5.1 keV in Si) the cells exhibit a threshold di stribution with a spread before adjustment of 350 e- rms. Each cell has a 5-bit register which allows masking, test-enable and 3-bit individual threshold adjust. After adjustment the threshold spread is reduced to 80 e- rms. Absolute calibration of the electrically measured equivalent charge can be done once the readout chip is bump-bonded to a detector.

  13. Comparison of the properties of AlGaInN light-emitting diode chips of vertical and flip-chip design using silicon as the a submount

    International Nuclear Information System (INIS)

    Markov, L. K.; Smirnova, I. P.; Pavlyuchenko, A. S.; Kukushkin, M. V.; Vasil’eva, E. D.; Chernyakov, A. E.; Usikov, A. S.

    2013-01-01

    Vertical and flip-chip light-emitting diode (LED) chips are compared from the viewpoint of the behavior of current spreading in the active region and the distribution of local temperatures and thermal resistances of chips. AlGaInN LED chips of vertical design are fabricated using Si as a submount and LED flipchips were fabricated with the removal of a sapphire substrate. The latter are also mounted on a Si submount. The active regions of both chips are identical and are about 1 mm 2 in size. It is shown that both the emittance of the crystal surface in the visible range and the distribution of local temperatures estimated from radiation in the infrared region are more uniform in crystals of vertical design. Heat removal from flip-chips is insufficient in regions of the n contact, which do not possess good thermal contact with the submount. As a result, the total thermal resistances between the p-n junction and the submount both for the vertical chips and for flip-chips are approximately 1 K/W. The total area of the flip-chips exceeds that of the vertical design chips by a factor of 1.4.

  14. On-chip hybrid photonic-plasmonic light concentrator for nanofocusing in an integrated silicon photonics platform.

    Science.gov (United States)

    Luo, Ye; Chamanzar, Maysamreza; Apuzzo, Aniello; Salas-Montiel, Rafael; Nguyen, Kim Ngoc; Blaize, Sylvain; Adibi, Ali

    2015-02-11

    The enhancement and confinement of electromagnetic radiation to nanometer scale have improved the performances and decreased the dimensions of optical sources and detectors for several applications including spectroscopy, medical applications, and quantum information. Realization of on-chip nanofocusing devices compatible with silicon photonics platform adds a key functionality and provides opportunities for sensing, trapping, on-chip signal processing, and communications. Here, we discuss the design, fabrication, and experimental demonstration of light nanofocusing in a hybrid plasmonic-photonic nanotaper structure. We discuss the physical mechanisms behind the operation of this device, the coupling mechanisms, and how to engineer the energy transfer from a propagating guided mode to a trapped plasmonic mode at the apex of the plasmonic nanotaper with minimal radiation loss. Optical near-field measurements and Fourier modal analysis carried out using a near-field scanning optical microscope (NSOM) show a tight nanofocusing of light in this structure to an extremely small spot of 0.00563(λ/(2n(rmax)))(3) confined in 3D and an exquisite power input conversion of 92%. Our experiments also verify the mode selectivity of the device (low transmission of a TM-like input mode and high transmission of a TE-like input mode). A large field concentration factor (FCF) of about 4.9 is estimated from our NSOM measurement with a radius of curvature of about 20 nm at the apex of the nanotaper. The agreement between our theory and experimental results reveals helpful insights about the operation mechanism of the device, the interplay of the modes, and the gradual power transfer to the nanotaper apex.

  15. Thermal effect analysis of silicon microring optical switch for on-chip interconnect

    Science.gov (United States)

    Fang, Xiongfeng; Yang, Lin

    2017-10-01

    The silicon microring resonator plays an important role in large-scale, high-integrability modern switching matrixes and optical networks, as silicon photonics enables ring resonators of an unprecedented compact size. But as the nature of resonators is their sensitivity to temperature, their performances are vulnerable to being affected by thermal effect. In this paper, we analyze the dominant thermal effects to the application of silicon microring optical switch. On the one hand we theoretically analyze and experimentally measure the thermal crosstalk among adjacent microring optical switches with different distances, and give possible solutions to minimize the affect of thermal crosstalk. On the other hand we analyze and measure the thermooptic dynamic response of microring switch; the experiment shows for the thermal-tuning that the rising edge is around 2 μs, and the falling edge is around 35 μs. We give the explanation of the asymmetric rise-time and fall-time. Project supported by the Natural National Science Foundation of China (Nos. 61235001, 61575187, 61535002).

  16. Single-Chip T/R Module for 1.2 GHz

    Science.gov (United States)

    Moussessian, Alina; Mojarradi, Mohammad; Johnson, Travis; Davis, John; Grigorian, Edwin; Hoffman, James; Caro, Edward; Kuhn, William

    2006-01-01

    A single-chip CMOS-based (complementary-metal-oxide-semiconductorbased) transmit/receive (T/R) module is being developed for L-band radar systems. Previous T/R module implementations required multiple chips employing different technologies (GaAs, Si, and others) combined with off-chip transmission lines and discrete components including circulators. The new design eliminates the bulky circulator, significantly reducing the size and mass of the T/R module. Compared to multi-chip designs, the single-chip CMOS can be implemented with lower cost. These innovations enable cost-effective realization of advanced phased array and synthetic aperture radar systems that require integration of thousands of T/R modules. The circulator is a ferromagnetic device that directs the flow of the RF (radio frequency) power during transmission and reception. During transmission, the circulator delivers the transmitted power from the amplifier to the antenna, while preventing it from damaging the sensitive receiver circuitry. During reception, the circulator directs the energy from the antenna to the low-noise amplifier (LNA) while isolating the output of the power amplifier (PA). In principle, a circulator could be replaced by series transistors acting as electronic switches. However, in practice, the integration of conventional series transistors into a T/R chip introduces significant losses and noise. The prototype single-chip T/R module contains integrated transistor switches, but not connected in series; instead, they are connected in a shunt configuration with resonant circuits (see figure). The shunt/resonant circuit topology not only reduces the losses associated with conventional semiconductor switches but also provides beneficial transformation of impedances for the PA and the LNA. It provides full singlepole/ double-throw switching for the antenna, isolating the LNA from the transmitted signal and isolating the PA from the received signal. During reception, the voltage on

  17. A new intelligent curtain control system based on 51 single chip microcomputer

    Science.gov (United States)

    Sun, Tuan; Wang, Yanhua; Wu, Mengmeng

    2017-04-01

    This paper uses 51 (single chip microcomputer) SCM as the operation and data processing center. According to the change of sunshine intensity and ambient temperature, a new type of intelligent curtain control system is designed by adopting photosensitive element and temperature sensor. In addition, the design also has a manual control mode. In the rain, when the light intensity is weak, the open position of the curtain can be set by the user. The system can maximize the user to provide user-friendly operation and comfortable living environment. The system can be applied to home or office environment, with a wide range of applications and simple operation and so on.

  18. Thin Single Crystal Silicon Solar Cells on Ceramic Substrates: November 2009 - November 2010

    Energy Technology Data Exchange (ETDEWEB)

    Kumar, A.; Ravi, K. V.

    2011-06-01

    In this program we have been developing a technology for fabricating thin (< 50 micrometres) single crystal silicon wafers on foreign substrates. We reverse the conventional approach of depositing or forming silicon on foreign substrates by depositing or forming thick (200 to 400 micrometres) ceramic materials on high quality single crystal silicon films ~ 50 micrometres thick. Our key innovation is the fabrication of thin, refractory, and self-adhering 'handling layers or substrates' on thin epitaxial silicon films in-situ, from powder precursors obtained from low cost raw materials. This 'handling layer' has sufficient strength for device and module processing and fabrication. Successful production of full sized (125 mm X 125 mm) silicon on ceramic wafers with 50 micrometre thick single crystal silicon has been achieved and device process flow developed for solar cell fabrication. Impurity transfer from the ceramic to the silicon during the elevated temperature consolidation process has resulted in very low minority carrier lifetimes and resulting low cell efficiencies. Detailed analysis of minority carrier lifetime, metals analysis and device characterization have been done. A full sized solar cell efficiency of 8% has been demonstrated.

  19. Monolithic integration of a silicon nanowire field-effect transistors array on a complementary metal-oxide semiconductor chip for biochemical sensor applications.

    Science.gov (United States)

    Livi, Paolo; Kwiat, Moria; Shadmani, Amir; Pevzner, Alexander; Navarra, Giulio; Rothe, Jörg; Stettler, Alexander; Chen, Yihui; Patolsky, Fernando; Hierlemann, Andreas

    2015-10-06

    We present a monolithic complementary metal-oxide semiconductor (CMOS)-based sensor system comprising an array of silicon nanowire field-effect transistors (FETs) and the signal-conditioning circuitry on the same chip. The silicon nanowires were fabricated by chemical vapor deposition methods and then transferred to the CMOS chip, where Ti/Pd/Ti contacts had been patterned via e-beam lithography. The on-chip circuitry measures the current flowing through each nanowire FET upon applying a constant source-drain voltage. The analog signal is digitized on chip and then transmitted to a receiving unit. The system has been successfully fabricated and tested by acquiring I-V curves of the bare nanowire-based FETs. Furthermore, the sensing capabilities of the complete system have been demonstrated by recording current changes upon nanowire exposure to solutions of different pHs, as well as by detecting different concentrations of Troponin T biomarkers (cTnT) through antibody-functionalized nanowire FETs.

  20. First prototype of a silicon microstrip detector with the data-driven readout chip FSSR2 for a tracking-based trigger system

    Energy Technology Data Exchange (ETDEWEB)

    Dinardo, M.E. [INFN and Universita degli Studi di Milan (Italy); Cardoso, G. [Fermi National Accelerator Laboratory (United States); Hoff, J. [Fermi National Accelerator Laboratory (United States); Manghisoni, M. [INFN Pavia and Universita degli Studi di Bergamo (Italy)]. E-mail: massimo.manghisoni@unibg.it; Mekkaoui, A. [Fermi National Accelerator Laboratory (United States); Moroni, L. [INFN and Universita degli Studi di Milan (Italy); Ratti, L. [INFN Pavia and Universita degli Studi di Pavia (Italy); Re, V. [INFN Pavia and Universita degli Studi di Bergamo (Italy); Valsecchi, F. [INFN and Universita degli Studi di Milan (Italy); Yarema, R. [Fermi National Accelerator Laboratory (United States)

    2007-03-01

    We developed and characterized the first prototype of a silicon microstrip detector system to be used in the forward region (high rapidity) of high energy physics experiments. This detector features an innovative readout integrated circuit, the second version of the Fermilab Silicon Strip Readout chip (FSSR2), which, being completely data-driven, allows for the direct use of the detector information at the lowest level of the trigger. All the particle hits on the detector can be read out in real time without any external trigger and any particular limitation due to deadtime. The chip services 128 strips providing the address, the time-stamp and a 3 bit amplitude information for all hits. Several programmable features are included in the chip, such as an internal pulser, a baseline restorer, and a selectable signal peaking time and gain. The performance in terms of noise and threshold dispersion have been measured with and without sensor connected to the chip and at different values of peaking time and gain, confirming that the FSSR2 meets the design requirements. The electronic calibration has been crosschecked with a radioactive source of {sup 241}Am.

  1. On-chip III-V monolithic integration of heralded single photon sources and beamsplitters

    Science.gov (United States)

    Belhassen, J.; Baboux, F.; Yao, Q.; Amanti, M.; Favero, I.; Lemaître, A.; Kolthammer, W. S.; Walmsley, I. A.; Ducci, S.

    2018-02-01

    We demonstrate a monolithic III-V photonic circuit combining a heralded single photon source with a beamsplitter, at room temperature and telecom wavelength. Pulsed parametric down-conversion in an AlGaAs waveguide generates counterpropagating photons, one of which is used to herald the injection of its twin into the beamsplitter. We use this configuration to implement an integrated Hanbury-Brown and Twiss experiment, yielding a heralded second-order correlation gher(2 )(0 )=0.10 ±0.02 that confirms single-photon operation. The demonstrated generation and manipulation of quantum states on a single III-V semiconductor chip opens promising avenues towards real-world applications in quantum information.

  2. Single-molecule microscopy using silicone oil immersion objective lenses

    NARCIS (Netherlands)

    Hink, M.

    2012-01-01

    Microscopy techniques capable of detecting individual molecules and providing quantitative data have the potential to offer great biological insight; however, such approaches require the efficient capture of light. Here, Mark Hink explains how the use of new silicone oil immersion objective lenses

  3. Fabrication of silicon condenser microphones using single wafer technology

    NARCIS (Netherlands)

    Scheeper, P.R.; van der Donk, A.G.H.; Olthuis, Wouter; Bergveld, Piet

    1992-01-01

    A condenser microphone design that can be fabricated using the sacrificial layer technique is proposed and tested. The microphone backplate is a 1-¿m plasma-enhanced chemical-vapor-deposited (PECVD) silicon nitride film with a high density of acoustic holes (120-525 holes/mm2), covered with a thin

  4. Effect of oxygen and nitrogen interactions on friction of single-crystal silicon carbide

    Science.gov (United States)

    Miyoshi, K.; Buckley, D. H.

    1978-01-01

    Friction studies were conducted with single-crystal silicon carbide contacting silicon carbide and titanium after having been exposed to oxygen and nitrogen in various forms. After they had been sputter cleaned, the surfaces were (1) exposed to gaseous oxygen and nitrogen (adsorption), (2) ion bombarded with oxygen and nitrogen, or (3) reacted with oxygen (SiC only). Auger emission spectroscopy was used to determine the presence of oxygen and nitrogen. The results indicate that the surfaces of silicon carbide with reacted and ion-bombarded oxygen ions give higher coefficients of friction than do argon sputter-cleaned surfaces. The effects of oxygen on friction may be related to the relative chemical, thermodynamic properties of silicon, carbon, and titanium for oxygen. The adsorbed films of oxygen, nitrogen, and mixed gases of oxygen and nitrogen on sputter-cleaned, oxygen-ion bombarded, and oxygen-reacted surfaces generally reduce friction. Adsorption to silicon carbide is relatively weak.

  5. An on-chip silicon compact triplexer based on cascaded tilted multimode interference couplers

    Science.gov (United States)

    Chen, Jingye; Liu, Penghao; Shi, Yaocheng

    2018-03-01

    An on-chip triplexer based on cascaded tilted multimode interference (MMI) couplers has been demonstrated to separate the 1310 nm wavelength band into one port and 1490 nm and 1550 nm wavelength bands into the other two ports respectively. By utilizing the dispersive self-imaging and pseudo self-imaging, the device length is not critically determined by the common multiple of beat lengths for different wavelengths. The total device size can be reduced to ∼450 μm, which is half of the butterfly structure reported. The whole device, fabricated with only one fully-etching step, is characterized with <-15 dB low crosstalk (CT) and ∼1 dB insertion loss (IL).

  6. Design of automatic curtain controlled by wireless based on single chip 51 microcomputer

    Science.gov (United States)

    Han, Dafeng; Chen, Xiaoning

    2017-08-01

    In order to realize the wireless control of the domestic intelligent curtains, a set of wireless intelligent curtain control system based on 51 single chip microcomputer have been designed in this paper. The intelligent curtain can work in the manual mode, automatic mode and sleep mode and can be carried out by the button and mobile phone APP mode loop switch. Through the photosensitive resistance module and human pyroelectric infrared sensor to collect the indoor light value and the data whether there is the person in the room, and then after single chip processing, the motor drive module is controlled to realize the positive inversion of the asynchronous motor, the intelligent opening and closing of the curtain have been realized. The operation of the motor can be stopped under the action of the switch and the curtain opening and closing and timing switch can be controlled through the keys and mobile phone APP. The optical fiber intensity, working mode, curtain state and system time are displayed by LCD1602. The system has a high reliability and security under practical testing and with the popularity and development of smart home, the design has broad market prospects.

  7. Primary single event effect studies on Xilinx 28-nm System-on-Chip (SoC)

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yao [Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Liu, Shuhuan, E-mail: shuhuanliu@126.com [Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Du, Xuecheng; Yuan, Yuan; He, Chaohui [Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China); Ren, Xiaotang [Peking University, Beijing 100000 (China); Du, Xiaozhi; Li, Yonghong [Xi’an Jiaotong University, Xi’an, Shaanxi 710049 (China)

    2016-09-21

    Single Event Effect (SEE) on Xilinx 28-nm System-on-Chip (SoC) was investigated by both simulation and experiments in this study. In the simulation process, typical structure of NAND gate and flip-flop in SoC were designed using Cadence tool. Various kinds of radiation were simulated as pulsed current source in consideration of multilayer wiring and energy loss before reaching the sensitive area. The circuit modules were simulated as SEE occurred and malfunctioned when pulsed current source existed. The changes of the circuit modules output were observed when pulsed current signals were placed at different sensitive nodes or the circuit operated under different conditions. The sensitive nodes in typical modules and the possible reasons of test program malfunction were primarily studied. In the experimental process, SoC chip was irradiated with α particles, protons and laser respectively. The irradiation test results showed that Single Event Upset (SEU) occurred in typical modules of SoC, in accordance with the simulation results.

  8. Real-time MPEG video codec on a single-chip multiprocessor

    Science.gov (United States)

    Lee, Woobin; Golston, Jeremiah; Gove, Robert J.; Kim, Yongmin

    1994-05-01

    We present a software implementation of a real-time MPEG video codec on the MediaStation 5000 multimedia system. Unlike other compression systems whose sole function is the encoding or decoding of video data, the MediaStation 5000 is capable of performing various real-time operations involving a wide range of multimedia data, including image, graphics, video, and even audio. This programmability is provided by Texas Instruments TMS320C80, better known as Multimedia Video Processor (MVP), which is a single-chip multiprocessing device with highly parallel internal architecture. The MVP integrates a RISC processor, four DSP-like processors, an intelligent DMA controller, video controllers, and a large amount of SRAMs onto a single chip. Since the MVP contains such a high degree of parallel features, developing the MPEG software and mapping it to the MVP requires a thorough study of the algorithms and a good understanding of the processor architecture. By exploiting the advanced features of the MVP, the MediaStation 5000 can achieve the MPEG compression and decompression of video sequences in real time.

  9. Pixel detector readout chip

    CERN Multimedia

    1991-01-01

    Close-up of a pixel detector readout chip. The photograph shows an aera of 1 mm x 2 mm containing 12 separate readout channels. The entire chip contains 1000 readout channels (around 80 000 transistors) covering a sensitive area of 8 mm x 5 mm. The chip has been mounted on a silicon detector to detect high energy particles.

  10. Lab-on-a-Chip Platforms for Biophysical Studies of Cancer with Single-Cell Resolution.

    Science.gov (United States)

    Shukla, Vasudha C; Kuang, Tai-Rong; Senthilvelan, Abirami; Higuita-Castro, Natalia; Duarte-Sanmiguel, Silvia; Ghadiali, Samir N; Gallego-Perez, Daniel

    2018-03-17

    Recent cancer research has more strongly emphasized the biophysical aspects of tumor development, progression, and microenvironment. In addition to genetic modifications and mutations in cancer cells, it is now well accepted that the physical properties of cancer cells such as stiffness, electrical impedance, and refractive index vary with tumor progression and can identify a malignant phenotype. Moreover, cancer heterogeneity renders population-based characterization techniques inadequate, as individual cellular features are lost in the average. Hence, platforms for fast and accurate characterization of biophysical properties of cancer cells at the single-cell level are required. Here, we highlight some of the recent advances in the field of cancer biophysics and the development of lab-on-a-chip platforms for single-cell biophysical analyses of cancer cells. Copyright © 2018 Elsevier Ltd. All rights reserved.

  11. Origami chip-on-sensor design: progress and new developments

    International Nuclear Information System (INIS)

    Irmler, C; Bergauer, T; Frankenberger, A; Friedl, M; Gfall, I; Valentan, M; Ishikawa, A; Kato, E; Negishi, K; Kameswara, R; Mohanty, G; Onuki, Y; Shimizu, N; Tsuboyama, T

    2013-01-01

    The Belle II silicon vertex detector will consist of four layers of double-sided silicon strip detectors, arranged in ladders. Each sensor will be read out individually by utilizing the Origami chip-on-sensor concept, where the APV25 chips are placed on flexible circuits, glued on top of the sensors. Beside a best compromise between low material budget and sufficient SNR, this concept allows efficient CO 2 cooling of the readout chips by a single, thin cooling pipe per ladder. Recently, we assembled a module consisting of two consecutive 6'' double-sided silicon strip detectors, both read out by Origami flexes. Such a compound of Origami modules is required for the ladders of the outer Belle II SVD layers. Consequently, it is intended to verify the scalability of the assembly procedure, the performance of combined Origami flexes as well as the efficiency of the CO 2 cooling system for a higher number of APV25 chips.

  12. Study of Charge Diffusion in a Silicon Detector Using an Energy Sensitive Pixel Readout Chip

    CERN Document Server

    Schioppa, E. J.; van Beuzekom, M.; Visser, J.; Koffeman, E.; Heijne, E.; Engel, K. J.; Uher, J.

    2015-01-01

    A 300 μm thick thin p-on-n silicon sensor was connected to an energy sensitive pixel readout ASIC and exposed to a beam of highly energetic charged particles. By exploiting the spectral information and the fine segmentation of the detector, we were able to measure the evolution of the transverse profile of the charge carriers cloud in the sensor as a function of the drift distance from the point of generation. The result does not rely on model assumptions or electric field calculations. The data are also used to validate numerical simulations and to predict the detector spectral response to an X-ray fluorescence spectrum for applications in X-ray imaging.

  13. From chip-in-a-lab to lab-on-a-chip: towards a single handheld electronic system for multiple application-specific lab-on-a-chip (ASLOC).

    Science.gov (United States)

    Neužil, P; Campos, C D M; Wong, C C; Soon, J B W; Reboud, J; Manz, A

    2014-07-07

    We present a portable, battery-operated and application-specific lab-on-a-chip (ASLOC) system that can be easily configured for a wide range of lab-on-a-chip applications. It is based on multiplexed electrical current detection that serves as the sensing system. We demonstrate different configurations to perform most detection schemes currently in use in LOC systems, including some of the most advanced such as nanowire-based biosensing, surface plasmon resonance sensing, electrochemical detection and real-time PCR. The complete system is controlled by a single chip and the collected information is stored in situ, with the option of transferring the data to an external display by using a USB interface. In addition to providing a framework for truly portable real-life developments of LOC systems, we envisage that this system will have a significant impact on education, especially since it can easily demonstrate the benefits of integrated microanalytical systems.

  14. All-in-polymer injection molded device for single cell capture using multilevel silicon master fabrication

    DEFF Research Database (Denmark)

    Tanzi, S.; Larsen, S.T.; Matteucci, M.

    2012-01-01

    This work demonstrates a novel all-in-polymer device for single cell capture applicable for biological recordings. The chip is injection molded and comprises a "cornered" (non planar) aperture. It has been demonstrated how cornered apertures are straightforward to mold in PDMS [1,2]. In this study...... we demonstrate cornered apertures made in a thermoplastic polymer. One of the advantages of cornered apertures is the ease of microscopy under a standard inverted optical microscope, when using transparent materials. After the part is injection molded, the sealing of the chip is performed by thermal...

  15. A forward error correction technique using a high-speed, high-rate single chip codec

    Science.gov (United States)

    Boyd, R. W.; Hartman, W. F.; Jones, Robert E.

    1989-01-01

    The authors describe an error-correction coding approach that allows operation in either burst or continuous modes at data rates of multiple hundreds of megabits per second. Bandspreading is low since the code rate is 7/8 or greater, which is consistent with high-rate link operation. The encoder, along with a hard-decision decoder, fits on a single application-specific integrated circuit (ASIC) chip. Soft-decision decoding is possible utilizing applique hardware in conjunction with the hard-decision decoder. Expected coding gain is a function of the application and is approximately 2.5 dB for hard-decision decoding at 10-5 bit-error rate with phase-shift-keying modulation and additive Gaussian white noise interference. The principal use envisioned for this technique is to achieve a modest amount of coding gain on high-data-rate, bandwidth-constrained channels. Data rates of up to 300 Mb/s can be accommodated by the codec chip. The major objective is burst-mode communications, where code words are composed of 32 n data bits followed by 32 overhead bits.

  16. A Single Chip VLSI Implementation of a QPSK/SQPSK Demodulator for a VSAT Receiver Station

    Science.gov (United States)

    Kwatra, S. C.; King, Brent

    1995-01-01

    This thesis presents a VLSI implementation of a QPSK/SQPSK demodulator. It is designed to be employed in a VSAT earth station that utilizes the FDMA/TDM link. A single chip architecture is used to enable this chip to be easily employed in the VSAT system. This demodulator contains lowpass filters, integrate and dump units, unique word detectors, a timing recovery unit, a phase recovery unit and a down conversion unit. The design stages start with a functional representation of the system by using the C programming language. Then it progresses into a register based representation using the VHDL language. The layout components are designed based on these VHDL models and simulated. Component generators are developed for the adder, multiplier, read-only memory and serial access memory in order to shorten the design time. These sub-components are then block routed to form the main components of the system. The main components are block routed to form the final demodulator.

  17. Radiation induced Single Event Effects in the ATLAS MDT-ASD front-end chip

    CERN Document Server

    Posch, C

    2002-01-01

    Single Event Effect (SEE) tests of the MDT-ASD, the ATLAS MDT front-end chip have been performed at the Harvard Cyclotron Lab. The MDT-ASD is an 8-channel drift tube read-out ASIC fabricated in a commercial 0.5um CMOS process (AMOS14TB). The chip contains a 53 bit register which holds the setup information and an associated shift register of the same length plus some additional control logic. 10 test devices were exposed to a 160 MeV proton beam with a fluence of 1.05E9 p.cm-2.s-1 up to >4.4E p.cm-2 per device. After a total fluence of 4.46E13 p.cm-2, 7 soft SEEs (non-permanent bit flips in the registers) and 0 hard/destructive SEE (e.g. latch-ups, SEL) had occurred. The simulated fluence for 10 years of LHC operation at nominal luminosity for worst case location MDT components is 2.67E11 h.cm-2. The rate of SEUs in the ASD setup register for all of ATLAS, derived from these numbers, is 2.4 per day. It is foreseen to update the active registers of the on-detector electronics at regular intervals. Depending on...

  18. A study on the edge chipping according to spindle speed and inclination angle of workpiece in laser-assisted milling of silicon nitride

    Science.gov (United States)

    Woo, Wan-Sik; Lee, Choon-Man

    2018-02-01

    Ceramics are difficult to machine due to their high hardness and brittleness. As an effective method for machining ceramics, laser-assisted machining (LAM) has been studied by many researchers. In particular, many studies of methods to improve the machinability of silicon nitride using LAM have been performed. However, there is little research on the effect of the inclination angle of the workpiece, because varying the angle increases the difficulty of controlling the laser preheating and tool path. This paper investigates the effect of preheating temperature, spindle speed and inclination angle of the workpiece on edge chipping of silicon nitride in an effort to obtain an enhanced surface finish using laser-assisted milling (LAMill). The machining conditions were determined by considering the parameters that can reduce edge chipping using related theory. Experimental results showed a reduction in edge chipping based on increases in preheating temperature, spindle speed and inclination angle of the workpiece. Also, by increasing the spindle speed and the inclination angle of the workpiece, surface roughness was decreased due to reduction in the cutting force. The energy efficiency of LAMill by comparing the specific cutting energy according to the machining conditions is analyzed.

  19. Annealing effect of H+ -implanted single crystal silicon on strain and crystal structure

    International Nuclear Information System (INIS)

    Duo Xinzhong; Liu Weili; Zhang Miao; Gao Jianxia; Fu Xiaorong; Lin Chenglu

    2000-01-01

    The work focuses on the rocking curves of H + -implanted single silicon crystal detected by Four-Crystal X-ray diffractometer. The samples were annealed under different temperatures. Lattice defect in H + -implanted silicon crystals was detected by Rutherford Backscattering Spectrometry. It appeared that H-related complex did not crush until annealing temperature reached about 400 degree C. At that temperature H 2 was formed, deflated in silicon lattice and strained the lattice. But defects did not come into being in large quantity. The lattice was undamaged. When annealing temperature reached 500 degree C, strain induced by H 2 deflation crashed the silicon lattice. A large number of defects were formed. At the same time bubbles in the crystal and blister/flaking on the surface could be observed

  20. Anisotropy effect of crater formation on single crystal silicon surface under intense pulsed ion beam irradiation

    Science.gov (United States)

    Shen, Jie; Yu, Xiao; Zhang, Jie; Zhong, Haowen; Cui, Xiaojun; Liang, Guoying; Yu, Xiang; Huang, Wanying; Shahid, Ijaz; Zhang, Xiaofu; Yan, Sha; Le, Xiaoyun

    2018-04-01

    Due to the induced extremely fast thermal and dynamic process, Intense Pulsed Ion Beam (IPIB) is widely applied in material processing, which can bring enhanced material performance and surface craters as well. To investigate the craters' formation mechanism, a specific model was built with Finite Element Methods (FEM) to simulate the thermal field on irradiated single crystal silicon. The direct evidence for the existence of the simulated 6-fold rotational symmetric thermal distribution was provided by electron microscope images obtained on single crystal silicon. The correlation of the experiment and simulation is of great importance to understand the interaction between IPIB and materials.

  1. Preparation and single molecule structure of electroactive polysilane end-grafted on a crystalline silicon surface

    Science.gov (United States)

    Furukawa, Kazuaki; Ebata, Keisuke

    2000-12-01

    Electrically active polysilanes of poly(methylphenylsilane) (PMPS) and poly[bis(p-n-butylphenyl)silane] (PBPS), which are, respectively, known as a good hole transporting material and a near-ultraviolet electroluminescent material, are end-grafted directly on a crystalline silicon surface. The single polysilane molecules are clearly distinguished one from the other on the surface by means of atomic force microscopy observations. End-grafted single molecules of PMPS are observed as dots while end-grafted PBPS appear as worms extending for more than 100 nm on the crystalline silicon surface.

  2. Single event upset studies on the CMS tracker APV25 readout chip

    CERN Document Server

    Noah, E; Bisello, D; Faccio, F; Friedl, M; Fulcher, J R; Hall, G; Huhtinen, M; Kaminski, A; Pernicka, Manfred; Raymond, M; Wyss, J

    2002-01-01

    The microstrip tracker for the CMS experiment at the CERN Large Hadron Collider will be read out using APV25 chips. During high luminosity running the tracker will be exposed to particle fluxes up to 10**7 cm**-**2 s**-**1, which raises concerns that the APV25 could occasionally suffer Single Event Upsets (SEUs). The effect of SEU on the APV25 has been studied to investigate implications for CMS detector operation and from the viewpoint of detailed circuit operation, to improve the understanding of its origin and what factors affect its magnitude. Simulations were performed to reconstruct the effects created by highly ionising particles striking sensitive parts of the circuits, along with consideration of the underlying mechanisms of charge deposition, collection and the consequences. A model to predict the behaviour of the memory circuits in the APV25 has been developed and data collected from dedicated experiments using both heavy ions and hadrons have been shown to support it.

  3. The charge collection in single side silicon microstrip detectors

    CERN Document Server

    Eremin, V V; Roe, S; Ruggiero, G; Weilhammer, Peter

    2003-01-01

    The transient current technique has been used to investigate signal formation in unirradiated silicon microstrip detectors, which are similar in geometry to those developed for the ATLAS experiment at LHC. Nanosecond pulsed infrared and red lasers were used to induce the signals under study. Two peculiarities in the detector performance were observed: an unexpectedly slow rise to the signal induced in a given strip when signals are injected opposite to the strip, and a long duration of the induced signal in comparison with the calculated drift time of charge carriers through the detector thickness - with a significant fraction of the charge being induced after charge carrier arrival. These major effects and details of the detector response for different positions of charge injection are discussed in the context of Ramo's theorem and compared with predictions arising from the more commonly studied phenomenon of signal formation in planar pad detectors.

  4. Acoustically driven degradation in single crystalline silicon solar cell

    Science.gov (United States)

    Olikh, O. Ya.

    2018-05-01

    The influence of ultrasound on current-voltage characteristics of crystalline silicon solar sell was investigated experimentally. The transverse and longitudinal acoustic waves were used over a temperature range of 290-340 K. It was found that the ultrasound loading leads to the reversible decrease in the photogenerated current, open-circuit voltage, fill factor, carrier lifetime, and shunt resistance as well as the increase in the ideality factor. The experimental results were described by using the models of coupled defect level recombination, Shockley-Read-Hall recombination, and dislocation-induced impedance. The contribution of the boron-oxygen related defects, iron-boron pairs, and oxide precipitates to both the carrier recombination and acousto-defect interaction was discussed. The experimentally observed phenomena are associated with the increase in the distance between coupled defects as well as the extension of the carrier capture coefficient of complex point defects and dislocations.

  5. Generation of vacancy cluster-related defects during single MeV silicon ion implantation of silicon

    Energy Technology Data Exchange (ETDEWEB)

    Pastuović, Ž., E-mail: zkp@ansto.gov.au [Australian Nuclear Science and Technology Organization, Locked Bag 2001, Kirrawee DC NSW 2232 (Australia); Capan, I. [Ruđer Bošković Institute, Bijenička cesta 54, P.O. Box 180, 10002 Zagreb (Croatia); Siegele, R. [Australian Nuclear Science and Technology Organization, Locked Bag 2001, Kirrawee DC NSW 2232 (Australia); Jačimović, R. [Jozef Stefan Institute, 1000 Ljubljana (Slovenia); Forneris, J. [Physics Department and NIS Excellence Centre, University of Torino, INFN – sez. Torino, CNISM – sez. Torino, via P. Giuria 1, 10125 Torino (Italy); Cohen, D.D. [Australian Nuclear Science and Technology Organization, Locked Bag 2001, Kirrawee DC NSW 2232 (Australia); Vittone, E. [Physics Department and NIS Excellence Centre, University of Torino, INFN – sez. Torino, CNISM – sez. Torino, via P. Giuria 1, 10125 Torino (Italy)

    2014-08-01

    Deep Level Transient Spectroscopy (DLTS) has been used to study defects formed in bulk silicon after implantation of 8.3 MeV {sup 28}Si{sup 3+} ions at room temperature. For this study, Schottky diodes prepared from n-type Czohralski-grown silicon wafers have been implanted in the single ion regime up to fluence value of 1 × 10{sup 10} cm{sup −2} utilizing the scanning focused ion microbeam as implantation tool and the Ion Beam Induced Current (IBIC) technique for ion counting. Differential DLTS analysis of the vacancy-rich region in self-implanted silicon reveals a formation of the broad vacancy-related defect state(s) at E{sub c} −0.4 eV. Direct measurements of the electron capture kinetics associated with this trap at E{sub c} −0.4 eV, prior to any annealing do not show an exponential behaviour typical for the simple point-like defects. The logarithmic capture kinetics is in accordance with the theory of majority carrier capture at extended or cluster-related defects. We have detected formation of two deep electron traps at E{sub c} −0.56 eV and E{sub c} −0.61 eV in the interstitial-rich region of the self-implanted silicon, before any annealing. No DLTS signal originating from vacancy-oxygen trap at E{sub c} −0.17 eV, present in the sample irradiated with 0.8 MeV neutrons, has been recorded in the self-implanted sample.

  6. Single-chip ring resonator-based 1 x 8 optical beam forming network in CMOS-compatible waveguide technology

    NARCIS (Netherlands)

    Zhuang, L.; Roeloffzen, C.G.H.; Heideman, Rene; Borreman, A.; Meijerink, Arjan; van Etten, Wim

    2007-01-01

    Optical ring resonators (ORRs) are good candidates to provide continuously tunable delay in optical beam forming networks (OBFNs) for phased array antenna systems. Delay and splitting/combining elements can be integrated on a single optical chip to form an OBFN. A state-of-the-art ring resonator-

  7. Bright trions in direct-bandgap silicon nanocrystals revealed bylow-temperature single-nanocrystal spectroscopy

    Czech Academy of Sciences Publication Activity Database

    Kůsová, Kateřina; Pelant, Ivan; Valenta, J.

    2015-01-01

    Roč. 4, Oct (2015), e336 ISSN 2047-7538 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA ČR GPP204/12/P235 Institutional support: RVO:68378271 Keywords : silicon nanocrystals * single-nanocrystal spectroscopy * luminescing trions Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 13.600, year: 2015

  8. A primary battery-on-a-chip using monolayer graphene

    Science.gov (United States)

    Iost, Rodrigo M.; Crespilho, Frank N.; Kern, Klaus; Balasubramanian, Kannan

    2016-07-01

    We present here a bottom-up approach for realizing on-chip on-demand batteries starting out with chemical vapor deposition-grown graphene. Single graphene monolayers contacted by electrode lines on a silicon chip serve as electrodes. The anode and cathode are realized by electrodeposition of zinc and copper respectively onto graphene, leading to the realization of a miniature graphene-based Daniell cell on a chip. The electrolyte is housed partly in a gel and partly in liquid form in an on-chip enclosure molded using a 3d printer or made out of poly(dimethylsiloxane). The realized batteries provide a stable voltage (∼1.1 V) for many hours and exhibit capacities as high as 15 μAh, providing enough power to operate a pocket calculator. The realized batteries show promise for deployment as on-chip power sources for autonomous systems in lab-on-a-chip or biomedical applications.

  9. Single crystalline silicon solar cells with rib structure

    Directory of Open Access Journals (Sweden)

    Shuhei Yoshiba

    2017-02-01

    Full Text Available To improve the conversion efficiency of Si solar cells, we have developed a thin Si wafer-based solar cell that uses a rib structure. The open-circuit voltage of a solar cell is known to increase with deceasing wafer thickness if the cell is adequately passivated. However, it is not easy to handle very thin wafers because they are brittle and are subject to warpage. We fabricated a lattice-shaped rib structure on the rear side of a thin Si wafer to improve the wafer’s strength. A silicon nitride film was deposited on the Si wafer surface and patterned to form a mask to fabricate the lattice-shaped rib, and the wafer was then etched using KOH to reduce the thickness of the active area, except for the rib region. Using this structure in a Si heterojunction cell, we demonstrated that a high open-circuit voltage (VOC could be obtained by thinning the wafer without sacrificing its strength. A wafer with thickness of 30 μm was prepared easily using this structure. We then fabricated Si heterojunction solar cells using these rib wafers, and measured their implied VOC as a function of wafer thickness. The measured values were compared with device simulation results, and we found that the measured VOC agrees well with the simulated results. To optimize the rib and cell design, we also performed device simulations using various wafer thicknesses and rib dimensions.

  10. On-chip single-copy real-time reverse-transcription PCR in isolated picoliter droplets

    Energy Technology Data Exchange (ETDEWEB)

    Beer, N R; Wheeler, E; Lee-Houghton, L; Watkins, N; Nasarabadi, S; Hebert, N; Leung, P; Arnold, D; Bailey, C; Colston, B

    2007-12-19

    The first lab-on-chip system for picoliter droplet generation and RNA isolation, followed by reverse transcription, and PCR amplification with real-time fluorescence detection in the trapped droplets has been developed. The system utilized a shearing T-junction in a fused silica device to generate a stream of monodisperse picoliter-scale droplets that were isolated from the microfluidic channel walls and each other by the oil phase carrier. An off-chip valving system stopped the droplets on-chip, allowing thermal cycling for reverse transcription and subsequent PCR amplification without droplet motion. This combination of the established real-time reverse transcription-PCR assay with digital microfluidics is ideal for isolating single-copy RNA and virions from a complex environment, and will be useful in viral discovery and gene-profiling applications.

  11. Evolution of single-particle structure of silicon isotopes

    Science.gov (United States)

    Bespalova, O. V.; Fedorov, N. A.; Klimochkina, A. A.; Markova, M. L.; Spasskaya, T. I.; Tretyakova, T. Yu.

    2018-01-01

    New data on proton and neutron single-particle energies E_{nlj} of Si isotopes with neutron number N from 12 to 28 as well as occupation probabilities N_{nlj} of single-particle states of stable isotopes 28, 30Si near the Fermi energy were obtained by the joint evaluation of the stripping and pick-up reaction data and excited state decay schemes of neighboring nuclei. The evaluated data indicate the following features of single-particle structure evolution: persistence of Z = 14 subshell closure with N increase, the new magicity of the number N = 16, and the conservation of the magic properties of the number N = 20 in Si isotopic chain. The features were described by the dispersive optical model. The calculation also predicts the weakening of N = 28 shell closure and demonstrates evolution of a bubble-like structure of the proton density distributions in neutron-rich Si isotopes.

  12. Single-charge tunneling in ambipolar silicon quantum dots

    NARCIS (Netherlands)

    Müller, Filipp

    2015-01-01

    Spin qubits in coupled quantum dots (QDs) are promising for future quantum information processing (QIP). A quantum bit (qubit) is the quantum mechanical analogon of a classical bit. In general, each quantum mechanical two-level system can represent a qubit. For the spin of a single charge carrier

  13. Single-layer graphene on silicon nitride micromembrane resonators

    DEFF Research Database (Denmark)

    Schmid, Silvan; Bagci, Tolga; Zeuthen, Emil

    2014-01-01

    for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling...

  14. Hybrid subtractive-additive-welding microfabrication for lab-on-chip applications via single amplified femtosecond laser source

    Science.gov (United States)

    Jonušauskas, Linas; Rekštytė, Sima; Buividas, Ričardas; Butkus, Simas; Gadonas, Roaldas; Juodkazis, Saulius; Malinauskas, Mangirdas

    2017-09-01

    An approach employing ultrafast laser hybrid subtractive-additive microfabrication, which combines ablation, three-dimensional nanolithography, and welding, is proposed for the realization of a lab-on-chip (LOC) device. A single amplified Yb:KGW femtosecond (fs)-pulsed laser source is shown to be suitable for fabricating microgrooves in glass slabs, polymerization of fine-meshes microfilter out of hybrid organic-inorganic photopolymer SZ2080 inside them, and, finally, sealing the whole chip with cover glass into a single monolithic piece. The created microfluidic device proved its particle sorting function by separating 1- and 10-μm polystyrene spheres in an aqueous mixture. All together, this proves that laser microfabrication based on a single amplified fs laser source is a flexible and versatile approach for the hybrid subtractive-additive manufacturing of functional mesoscale multimaterial LOC devices.

  15. Simple and controlled single electron transistor based on doping modulation in silicon nanowires

    Science.gov (United States)

    Hofheinz, M.; Jehl, X.; Sanquer, M.; Molas, G.; Vinet, M.; Deleonibus, S.

    2006-10-01

    A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel of the transistor is the Coulomb island at low temperature. Two silicon nitride spacers deposited on each side of the gate create a modulation of doping along the nanowire that creates tunnel barriers. Such barriers are fixed and controlled, like in metallic SETs. The period of the Coulomb oscillations is set by the gate capacitance of the transistor and therefore controlled by lithography. The source and drain capacitances have also been characterized. This design could be used to build more complex SET devices.

  16. Three-dimensional on-chip continuous-flow polymerase chain reaction employing a single heater.

    Science.gov (United States)

    Wu, Wenming; Lee, Nae Yoon

    2011-06-01

    Multi-step temperature control in a polymerase chain reaction (PCR) is a limiting factor in device miniaturization and portability. In this study, we propose the fabrication of a three-dimensional (3D) microdevice employing a single heater to minimize temperature control required for an on-chip continuous-flow PCR as well as the overall footprint by stacking the device in multi-layers. Two poly(dimethylsiloxane) (PDMS) layers with differing thicknesses are vertically stacked with their microchannel-engraved sides facing down. Through-holes are made in the thicker PDMS layer, which is sandwiched between a glass substrate at the bottom and the thinner PDMS layer at the top. In this way, a fluidic conduit is realized in a 3D configuration. The assembled 3D microdevice is then placed onto a heater glass-side down. The interface of the two PDMS layers displays a relatively lower temperature than that of the PDMS and glass layers due to the low thermal conductivity of the PDMS and its physical distance from the heater. The denaturation temperature can be controlled by adjusting the temperature of the heater, while the annealing/extension temperature can be controlled automatically by molding the thicker bottom PDMS layer into the appropriate thickness calculated using a numerical derivation proposed in this study. In this way, a cumbersome temperature measurement step is eliminated. DNA amplification was successfully carried out using the proposed 3D fluidic microdevice, and the intensity of the resulting amplicon was comparable to that obtained using a thermal cycler. This novel concept of adopting a single heating source greatly simplifies the temperature control issue present in an on-chip continuous-flow PCR. It also allows the use of a commercialized hot plate as a potential heat source, paving the way for device miniaturization and portability in a highly cost-effective manner. In this study, a simple and facile technique to make arrays of through-holes for the

  17. Analysis of single-photon time resolution of FBK silicon photomultipliers

    International Nuclear Information System (INIS)

    Acerbi, Fabio; Ferri, Alessandro; Gola, Alberto; Zorzi, Nicola; Piemonte, Claudio

    2015-01-01

    We characterized and analyzed an important feature of silicon photomultipliers: the single-photon time resolution (SPTR). We characterized the SPTR of new RGB (Red–Green–Blue) type Silicon Photomultipliers and SPADs produced at FBK (Trento, Italy), studying its main limiting factors. We compared time resolution of 1×1 mm 2 and 3×3 mm 2 SiPMs and a single SiPM cell (i.e. a SPAD with integrated passive-quenching), employing a mode-locked pulsed laser with 2-ps wide pulses. We estimated the contribution of front-end electronic-noise, of cell-to-cell uniformity, and intrinsic cell time-resolution. At a single-cell level, we compared the results obtained with different layouts. With a circular cell with a top metallization covering part of the edge and enhancing the signal extraction, we reached ~20 ps FWHM of time resolution

  18. Analysis of single-photon time resolution of FBK silicon photomultipliers

    Energy Technology Data Exchange (ETDEWEB)

    Acerbi, Fabio, E-mail: acerbi@fbk.eu; Ferri, Alessandro; Gola, Alberto; Zorzi, Nicola; Piemonte, Claudio

    2015-07-01

    We characterized and analyzed an important feature of silicon photomultipliers: the single-photon time resolution (SPTR). We characterized the SPTR of new RGB (Red–Green–Blue) type Silicon Photomultipliers and SPADs produced at FBK (Trento, Italy), studying its main limiting factors. We compared time resolution of 1×1 mm{sup 2} and 3×3 mm{sup 2} SiPMs and a single SiPM cell (i.e. a SPAD with integrated passive-quenching), employing a mode-locked pulsed laser with 2-ps wide pulses. We estimated the contribution of front-end electronic-noise, of cell-to-cell uniformity, and intrinsic cell time-resolution. At a single-cell level, we compared the results obtained with different layouts. With a circular cell with a top metallization covering part of the edge and enhancing the signal extraction, we reached ~20 ps FWHM of time resolution.

  19. Medipix3: A 64 k pixel detector readout chip working in single photon counting mode with improved spectrometric performance

    CERN Document Server

    Ballabriga, R; Wong, W; Heijne, E; Campbell, M; Llopart, X

    2011-01-01

    Medipix3 is a 256 x 256 channel hybrid pixel detector readout chip working in a single photon counting mode with a new inter-pixel architecture, which aims to improve the energy resolution in pixelated detectors by mitigating the effects of charge sharing between channels. Charges are summed in all 2 x 2 pixel clusters on the chip and a given hit is allocated locally to the pixel summing circuit with the biggest total charge on an event-by-event basis. Each pixel contains also two 12-bit binary counters with programmable depth and overflow control. The chip is configurable such that either the dimensions of each detector pixel match those of one readout pixel or detector pixels are four times greater in area than the readout pixels. In the latter case, event-by-event summing is still possible between the larger pixels. Each pixel has around 1600 transistors and the analog static power consumption is below 15 mu W in the charge summing mode and 9 mu W in the single pixel mode. The chip has been built in an 8-m...

  20. Polysilicon nanogap lab-on-chip facilitates multiplex analyses with single analyte.

    Science.gov (United States)

    Balakrishnan, Sharma Rao; Hashim, U; Gopinath, Subash C B; Poopalan, P; Ramayya, H R; Veeradasan, P; Haarindraprasad, R; Ruslinda, A R

    2016-10-15

    Rationally designed biosensing system supports multiplex analyses is warranted for medical diagnosis to determine the level of analyte interaction. The chemically functionalized novel multi-electrode polysilicon nanogap (PSNG) lab-on-chip is designed in this study, facilitates multiplex analyses for a single analyte. On the fabricated 69nm PSNG, biocompatibility and structural characteristics were verified for the efficient binding of Human Chorionic Gonadotropin (hCG). With the assistance of microfluidics, hCG sample was delivered via single-injection to 3-Aminopropyl(triethoxy)silane (APTES) and Glycidoxypropyl(trimethoxy)silane (GPMS) modified PSNG electrodes and the transduced signal was used to investigate the dielectric mechanisms for multiplex analyses. The results from amperometric response and impedance measurement delivered the scale of interaction between anti-hCG antibody and hCG that exhibited 6.5 times higher sensitivity for the chemical linker, APTES than GPMS. Under optimized experimental conditions, APTES and GPMS modified immunosensor has a limit of detection as 0.56mIU/ml and 2.93mIU/ml (at S/N=3), with dissociation constants (Kd) of 5.65±2.5mIU/ml and 7.28±2.6mIU/ml, respectively. These results suggest that multiplex analysis of single target could enhance the accuracy of detection and reliable for real-time comparative analyses. The designed PSNG is simple, feasible, requires low sample consumption and could be applied for any given multiplex analyses. Copyright © 2015 Elsevier B.V. All rights reserved.

  1. Fabrication of single-crystal silicon nanotubes with sub-10 nm walls using cryogenic inductively coupled plasma reactive ion etching

    Science.gov (United States)

    Li, Zhiqin; Chen, Yiqin; Zhu, Xupeng; Zheng, Mengjie; Dong, Fengliang; Chen, Peipei; Xu, Lihua; Chu, Weiguo; Duan, Huigao

    2016-09-01

    Single-crystal silicon nanostructures have attracted much attention in recent years due in part to their unique optical properties. In this work, we demonstrate direct fabrication of single-crystal silicon nanotubes with sub-10 nm walls which show low reflectivity. The fabrication was based on a cryogenic inductively coupled plasma reactive ion etching process using high-resolution hydrogen silsesquioxane nanostructures as the hard mask. Two main etching parameters including substrate low-frequency power and SF6/O2 flow rate ratio were investigated to determine the etching mechanism in the process. With optimized etching parameters, high-aspect-ratio silicon nanotubes with smooth and vertical sub-10 nm walls were fabricated. Compared to commonly-used antireflection silicon nanopillars with the same feature size, the densely packed silicon nanotubes possessed a lower reflectivity, implying possible potential applications of silicon nanotubes in photovoltaics.

  2. Enhancement mode single electron transistor in pure silicon

    Science.gov (United States)

    Hu, Binhui; Yang, C. H.; Jones, G. M.; Yang, M. J.

    2007-03-01

    Solid state implementations of lateral qubits offer the advantage of being scalable and can be easily integrated by existing main stream IC technologies. In addition, the two Zeeman states of an electron spin in a quantum dot (QD) provide a promising candidate for a qubit. Spins in lateral QDs in the GaAs/AlGaAs single electron transistors (SETs) have been intensively investigated. In contrast, Si provides a number of advantages, including long spin coherence time, large g-factor, and small spin-orbit coupling effect. We have demonstrated Si SET in the few electron regime.* In this talk, we will report the isolation of a single electron in a Si QD using a fabrication technique that incorporates the standard Al/SiO2/Si system with an enhancement mode SET structure. Our SET is built in highly resistive Si substrates with bilayer gates. The high purity Si minimizes the potential disorder from impurities. The top gate induces 2D electrons, and several side gates help define the tunneling barriers, fine tune the shape of the QD, and control the number of electrons in it. We will discuss the operating principle, computer simulation, and low temperature transport data. *APPLIED PHYSICS LETTERS 89, 073106 (2006)

  3. Surface texture of single-crystal silicon oxidized under a thin V{sub 2}O{sub 5} layer

    Energy Technology Data Exchange (ETDEWEB)

    Nikitin, S. E., E-mail: nikitin@mail.ioffe.ru; Verbitskiy, V. N.; Nashchekin, A. V.; Trapeznikova, I. N.; Bobyl, A. V.; Terukova, E. E. [Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

    2017-01-15

    The process of surface texturing of single-crystal silicon oxidized under a V{sub 2}O{sub 5} layer is studied. Intense silicon oxidation at the Si–V{sub 2}O{sub 5} interface begins at a temperature of 903 K which is 200 K below than upon silicon thermal oxidation in an oxygen atmosphere. A silicon dioxide layer 30–50 nm thick with SiO{sub 2} inclusions in silicon depth up to 400 nm is formed at the V{sub 2}O{sub 5}–Si interface. The diffusion coefficient of atomic oxygen through the silicon-dioxide layer at 903 K is determined (D ≥ 2 × 10{sup –15} cm{sup 2} s{sup –1}). A model of low-temperature silicon oxidation, based on atomic oxygen diffusion from V{sub 2}O{sub 5} through the SiO{sub 2} layer to silicon, and SiO{sub x} precipitate formation in silicon is proposed. After removing the V{sub 2}O{sub 5} and silicon-dioxide layers, texture is formed on the silicon surface, which intensely scatters light in the wavelength range of 300–550 nm and is important in the texturing of the front and rear surfaces of solar cells.

  4. Control of single-electron charging of metallic nanoparticles onto amorphous silicon surface.

    Science.gov (United States)

    Weis, Martin; Gmucová, Katarína; Nádazdy, Vojtech; Capek, Ignác; Satka, Alexander; Kopáni, Martin; Cirák, Július; Majková, Eva

    2008-11-01

    Sequential single-electron charging of iron oxide nanoparticles encapsulated in oleic acid/oleyl amine envelope and deposited by the Langmuir-Blodgett technique onto Pt electrode covered with undoped hydrogenated amorphous silicon film is reported. Single-electron charging (so-called quantized double-layer charging) of nanoparticles is detected by cyclic voltammetry as current peaks and the charging effect can be switched on/off by the electric field in the surface region induced by the excess of negative/positive charged defect states in the amorphous silicon layer. The particular charge states in amorphous silicon are created by the simultaneous application of a suitable bias voltage and illumination before the measurement. The influence of charged states on the electric field in the surface region is evaluated by the finite element method. The single-electron charging is analyzed by the standard quantized double layer model as well as two weak-link junctions model. Both approaches are in accordance with experiment and confirm single-electron charging by tunnelling process at room temperature. This experiment illustrates the possibility of the creation of a voltage-controlled capacitor for nanotechnology.

  5. Temperature effect on phase states of quartz nano-crystals in silicon single crystal

    International Nuclear Information System (INIS)

    Kalanov, M.U.; Ibragimova, E.M.; Khamraeva, R.N.; Rustamova, V.M.; Ummatov, Kh.D.

    2006-01-01

    Full text: Oxygen penetrates into the silicon lattice up to the concentration of 2·10 18 cm -3 in the course of growing [1]. By the author's opinion at a low oxygen content the formation of solid solution is possible in the local defect places of the silicon single crystal lattice due to the difference in effective ion radius of oxygen and silicon (r O 0.176 and r Si = 0.065 nm). Upon reaching some critical content (∼ 10 17 cm -3 ), it becomes favorable energetically for oxygen ions to form precipitates (SiO x ) and finally a dielectric layer (stoichiometric inclusions of SiO 2 ). It was shown later that depending on the growth conditions, indeed the quartz crystal inclusions are formed in the silicon single crystals at an amount of 0.3 /0.5 wt. % [2]. However the authors did not study a phase state of the quartz inclusions. Therefore the aim of this work was to study a phase state of the quartz inclusions in silicon crystal at various temperatures. We examined the silicon single crystals grown by Czochralski technique, which were cut in (111) plane in the form of disk of 20 mm diameter and 1.5 thickness and had hole conductivity with the specific resistance ρ o ≅ 1/10 Ohm cm. The dislocation density was N D ≅ 10 1 /10 3 cm -2 , the concentrations of oxygen and boron were N 0 ≅ 2/ 4·10 17 cm -3 and N B ≅ 3*10 15 cm -3 . Structure was analyzed at the set-up DRON-UM1 with high temperature supply UVD-2000 ( CuK = 0.1542 nm) at the temperatures of 300, 1173 and 1573 K measured with platinum-platinum-rhodium thermocouple. The high temperature diffraction spectrum measured at 1573 K in the angle range (2Θ≅10/70 d egree ) there is only one main structure reflection (111) with a high intensity and d/n ≅ 0.3136 nm (2 Θ≅ 28.5 d egree ) from the matrix lattice of silicon single crystal. The weak line at 2 Θ≅ 25.5 d egree ( d/n≅0.3136 nm) is β component of the main reflection (111), and the weak structure peak at 2Θ≅59 d egree ( d/n≅ 0.1568 nm

  6. On-chip all-optical wavelength conversion of multicarrier, multilevel modulation (OFDM m-QAM) signals using a silicon waveguide.

    Science.gov (United States)

    Li, Chao; Gui, Chengcheng; Xiao, Xi; Yang, Qi; Yu, Shaohua; Wang, Jian

    2014-08-01

    We report on-chip all-optical wavelength conversion of multicarrier multilevel modulation signals in a silicon waveguide. Using orthogonal frequency-division multiplexing (OFDM) combined with advanced multilevel quadrature amplitude modulation (QAM) signals (i.e., OFDM m-QAM), we experimentally demonstrate all-optical wavelength conversions of 3.2 Gbaud/s OFDM 16/32/64/128-QAM signals based on the degenerate four-wave mixing (FWM) nonlinear effect in a silicon waveguide. The measured optical signal-to-noise ratio (OSNR) penalties of wavelength conversion are ∼3  dB for OFDM 16-QAM and ∼4  dB for OFDM 32-QAM at 7% forward error correction (FEC) threshold and ∼3.5  dB for OFDM 64-QAM and ∼4.5  dB for OFDM 128-QAM at 20% FEC threshold. The observed clear constellations of converted idlers imply favorable performance obtained for silicon-waveguide-based OFDM 16/32/64/128-QAM wavelength conversions.

  7. Charge collection measurements with p-type Magnetic Czochralski silicon single pad detectors

    International Nuclear Information System (INIS)

    Tosi, C.; Bruzzi, M.; Macchiolo, A.; Scaringella, M.; Petterson, M.K.; Sadrozinski, H.F.-W.; Betancourt, C.; Manna, N.; Creanza, D.; Boscardin, M.; Piemonte, C.; Zorzi, N.; Borrello, L.; Messineo, A.

    2007-01-01

    The charge collected from beta source particles in single pad detectors produced on p-type Magnetic Czochralski (MCz) silicon wafers has been measured before and after irradiation with 26 MeV protons. After a 1 MeV neutron equivalent fluence of 1x10 15 cm -2 the collected charge is reduced to 77% at bias voltages below 900 V. This result is compared with previous results from charge collection measurements

  8. On-chip magnetically actuated robot with ultrasonic vibration for single cell manipulations.

    Science.gov (United States)

    Hagiwara, Masaya; Kawahara, Tomohiro; Yamanishi, Yoko; Masuda, Taisuke; Feng, Lin; Arai, Fumihito

    2011-06-21

    This paper presents an innovative driving method for an on-chip robot actuated by permanent magnets in a microfluidic chip. A piezoelectric ceramic is applied to induce ultrasonic vibration to the microfluidic chip and the high-frequency vibration reduces the effective friction on the MMT significantly. As a result, we achieved 1.1 micrometre positioning accuracy of the microrobot, which is 100 times higher accuracy than without vibration. The response speed is also improved and the microrobot can be actuated with a speed of 5.5 mm s(-1) in 3 degrees of freedom. The novelty of the ultrasonic vibration appears in the output force as well. Contrary to the reduction of friction on the microrobot, the output force increased twice as much by the ultrasonic vibration. Using this high accuracy, high speed, and high power microrobot, swine oocyte manipulations are presented in a microfluidic chip.

  9. TEST ON ABCD CHIPS

    CERN Document Server

    Ferrère, D; Zsenei, A; Kaplon, J; Lacasta, C; Dabrowski, W; Kudlaty, J; Wolter, M; Azman, S

    1998-01-01

    The ABCD chip is one of the two technological options for the binary readout architecture under development for the Silicon Tracker (SCT) in ATLAS. The chip is realised in the DMILL technology (a 0.8 mum BICMOS trench isolation process). This note reports on the first results obtained at CERN on the p-type ABCD chips of the first batch delivered by TEMIC in February 1998.

  10. Spin Measurements of an Electron Bound to a Single Phosphorous Donor in Silicon

    Science.gov (United States)

    Luhman, D. R.; Nguyen, K.; Tracy, L. A.; Carr, S. M.; Borchardt, J.; Bishop, N. C.; Ten Eyck, G. A.; Pluym, T.; Wendt, J.; Carroll, M. S.; Lilly, M. P.

    2014-03-01

    The spin of an electron bound to a single donor implanted in silicon is potentially useful for quantum information processing. We report on our efforts to measure and manipulate the spin of an electron bound to a single P donor in silicon. A low number of P donors are implanted using a self-aligned process into a silicon substrate in close proximity to a single-electron-transistor (SET) defined by lithographically patterned polysilicon gates. The SET is used to sense the occupancy of the electron on the donor and for spin read-out. An adjacent transmission line allows the application of microwave pulses to rotate the spin of the electron. We will present data from various experiments designed to exploit these capabilities. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. The work was supported by Sandia National Laboratories Directed Research and Development Program. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  11. Enhancing the brightness of electrically driven single-photon sources using color centers in silicon carbide

    Science.gov (United States)

    Khramtsov, Igor A.; Vyshnevyy, Andrey A.; Fedyanin, Dmitry Yu.

    2018-03-01

    Practical applications of quantum information technologies exploiting the quantum nature of light require efficient and bright true single-photon sources which operate under ambient conditions. Currently, point defects in the crystal lattice of diamond known as color centers have taken the lead in the race for the most promising quantum system for practical non-classical light sources. This work is focused on a different quantum optoelectronic material, namely a color center in silicon carbide, and reveals the physics behind the process of single-photon emission from color centers in SiC under electrical pumping. We show that color centers in silicon carbide can be far superior to any other quantum light emitter under electrical control at room temperature. Using a comprehensive theoretical approach and rigorous numerical simulations, we demonstrate that at room temperature, the photon emission rate from a p-i-n silicon carbide single-photon emitting diode can exceed 5 Gcounts/s, which is higher than what can be achieved with electrically driven color centers in diamond or epitaxial quantum dots. These findings lay the foundation for the development of practical photonic quantum devices which can be produced in a well-developed CMOS compatible process flow.

  12. Preservation of Seed Crystals in Feedstock Melting for Cast Quasi-Single Crystalline Silicon Ingots

    Directory of Open Access Journals (Sweden)

    Zaoyang Li

    2013-01-01

    Full Text Available The preservation of seed crystals is important for the casting of quasi-single crystalline (QSC silicon ingots. We carried out transient global simulations of the feedstock melting process in an industrial-sized directional solidification (DS furnace to investigate key factors influencing seed preservation. The power distribution between the top and side heaters is adjusted in the conventional furnace for multicrystalline silicon ingots and in the evolved furnace with a partition block for QSC silicon ingots. The evolution of the solid-liquid interface for melting and the temperature distribution in the furnace core area are analyzed. The power distribution can influence the temperature gradient in the silicon domain significantly. However, its effect on seed preservation is limited in both furnaces. Seed crystals can be preserved in the evolved furnace, as the partition block reduces the radiant heat flux from the insulation walls to the heat exchange block and prevents the heat flowing upwards under the crucible. Therefore, the key to seed preservation is to control radiant heat transfer in the DS furnace and guarantee downward heat flux under the crucible.

  13. Surface finish in ultra-precision diamond turning of single-crystal silicon

    Science.gov (United States)

    Ayomoh, M.; Abou-El-Hossein, K.

    2015-10-01

    Silicon is an optical material widely used in the production of infrared optics. However, silicon as a brittle material exhibits some difficulties when ultra-precision machined by mono-crystalline single point diamond. Finish turning of silicon with mono- crystalline diamond inserts results in accelerated tool wear rates if the right combination of the machining parameters is not properly selected. In this study, we conducted a series of machining tests on an ultra-high precision machine tool using finish turning conditions when using mono-crystalline diamond inserts with negative rake angle and relatively big nose radius. The study yields some recommendations on the best combination of machining parameters that will result in maximum material removal rates with smallest possible surface finish. In this work, standard non-controlled waviness diamond inserts having nose radius of about 1.5 mm, rake angle of negative 25°, and clearance angle of 5° were used to produce flat surfaces on silicon disk. From the results, it has been established that feed rate has the most influential effect followed by the depth of cut and cutting speed.

  14. Electronic spectrum of a deterministic single-donor device in silicon

    International Nuclear Information System (INIS)

    Fuechsle, Martin; Miwa, Jill A.; Mahapatra, Suddhasatta; Simmons, Michelle Y.; Hollenberg, Lloyd C. L.

    2013-01-01

    We report the fabrication of a single-electron transistor (SET) based on an individual phosphorus dopant that is deterministically positioned between the dopant-based electrodes of a transport device in silicon. Electronic characterization at mK-temperatures reveals a charging energy that is very similar to the value expected for isolated P donors in a bulk Si environment. Furthermore, we find indications for bulk-like one-electron excited states in the co-tunneling spectrum of the device, in sharp contrast to previous reports on transport through single dopants

  15. A novel hybrid III–V/silicon deformed micro-disk single-mode laser

    International Nuclear Information System (INIS)

    Feng Peng; Zhang Yejin; Liu Lei; Zhang Siriguleng; Wang Hailing; Zheng Wanhua; Wang Yufei

    2015-01-01

    A novel hybrid III–V/silicon deformed micro-disk single-mode laser connecting to a Si output waveguide is designed, and fabricated through BCB bonding technology and standard i-line photolithography. Compared to a traditional circular micro-disk in multi-longitudinal-mode operation, unidirectional emission and single longitudinal-mode output from a Si waveguide are realized. In the experiments, an output power of 0.31 mW and a side-mode suppression ratio of 27 dB in the continuous-wave regime are obtained. (semiconductor devices)

  16. Chips 2020

    CERN Document Server

    2016-01-01

    The release of this second volume of CHIPS 2020 coincides with the 50th anniversary of Moore’s Law, a critical year marked by the end of the nanometer roadmap and by a significantly reduced annual rise in chip performance. At the same time, we are witnessing a data explosion in the Internet, which is consuming 40% more electrical power every year, leading to fears of a major blackout of the Internet by 2020. The messages of the first CHIPS 2020, published in 2012, concerned the realization of quantum steps for improving the energy efficiency of all chip functions. With this second volume, we review these messages and amplify upon the most promising directions: ultra-low-voltage electronics, nanoscale monolithic 3D integration, relevant-data, brain- and human-vision-inspired processing, and energy harvesting for chip autonomy. The team of authors, enlarged by more world leaders in low-power, monolithic 3D, video, and Silicon brains, presents new vistas in nanoelectronics, promising  Moore-like exponential g...

  17. Low Temperature Characterization of PMOS-type Gate-all-around Silicon nanowire FETs as single-hole-transistors

    Science.gov (United States)

    Hong, B. H.; Hwang, S. W.; Lee, Y. Y.; Son, M. H.; Ahn, D.; Cho, K. H.; Yeo, K. H.; Kim, D.-W.; Jin, G. Y.; Park, D.

    2011-12-01

    We report the single hole tunneling characteristics observed from a PMOS-type gate-all-around silicon nanowire field-effect-transistor with the radius 5 nm and the length 44 nm. The total capacitance of the quantum dot obtained from the measured Coulomb oscillations and Coulomb diamonds matches with the ideal capacitance of the silicon cylinder. It suggests that the observed single hole tunneling is originated from the fabricated structure.

  18. Chip, Chip, Hooray!

    Science.gov (United States)

    Kelly, Susan

    2001-01-01

    Presents a science laboratory using different brands of potato chips in which students test their oiliness, size, thickness, saltiness, quality, and cost, then analyze the results to determine the best chip. Gives a brief history of potato chips. (YDS)

  19. High-voltage (100 V ChipfilmTM single-crystal silicon LDMOS transistor for integrated driver circuits in flexible displays

    Directory of Open Access Journals (Sweden)

    J. N. Burghartz

    2009-05-01

    Full Text Available System-in-Foil (SiF is an emerging field of large-area polymer electronics that employs new materials such as conductive polymers and electrophoretic micro-capsules (E-Ink along with ultra-thin and thus flexible chips. In flexible displays, the integration of gate and source drivers onto the flexible part increases the yield and enhances the reliability of the system. In this work we propose a high-voltage ChipfilmTM lateral diffused MOS transistor (LDMOS structure on ultra-thin single-crystalline silicon chips. The fabrication process is compatible with CMOS standard processing. This LDMOS structure proves to be well suited for providing adequately large switching voltages in spite of the thin (<10 μm substrate. A breakdown voltage of more than 100 volts with drain-to-source saturation current Ids(sat≈85 μA/μm for N-LDMOS and Ids(sat≈20 μA/μm for P-LDMOS is predicted through process and device simulations.

  20. ESR Experiments on a Single Donor Electron in Isotopically Enriched Silicon

    Science.gov (United States)

    Tracy, Lisa; Luhman, Dwight; Carr, Stephen; Borchardt, John; Bishop, Nathaniel; Ten Eyck, Gregory; Pluym, Tammy; Wendt, Joel; Witzel, Wayne; Blume-Kohout, Robin; Nielsen, Erik; Lilly, Michael; Carroll, Malcolm

    In this talk we will discuss electron spin resonance experiments in single donor silicon qubit devices fabricated at Sandia National Labs. A self-aligned device structure consisting of a polysilicon gate SET located adjacent to the donor is used for donor electron spin readout. Using a cryogenic HEMT amplifier next to the silicon device, we demonstrate spin readout at 100 kHz bandwidth and Rabi oscillations with 0.96 visibility. Electron spin resonance measurements on these devices show a linewidth of 30 kHz and coherence times T2* = 10 us and T2 = 0.3 ms. We also discuss estimates of the fidelity of our donor electron spin qubit measurements using gate set tomography. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000. ESR Experiments on a Single Donor Electron in Isotopically Enriched Silicon.

  1. Mapping the "forbidden" transverse-optical phonon in single strained silicon (100) nanowire.

    Science.gov (United States)

    Tarun, Alvarado; Hayazawa, Norihiko; Ishitobi, Hidekazu; Kawata, Satoshi; Reiche, Manfred; Moutanabbir, Oussama

    2011-11-09

    The accurate manipulation of strain in silicon nanowires can unveil new fundamental properties and enable novel or enhanced functionalities. To exploit these potentialities, it is essential to overcome major challenges at the fabrication and characterization levels. With this perspective, we have investigated the strain behavior in nanowires fabricated by patterning and etching of 15 nm thick tensile strained silicon (100) membranes. To this end, we have developed a method to excite the "forbidden" transverse-optical (TO) phonons in single tensile strained silicon nanowires using high-resolution polarized Raman spectroscopy. Detecting this phonon is critical for precise analysis of strain in nanoscale systems. The intensity of the measured Raman spectra is analyzed based on three-dimensional field distribution of radial, azimuthal, and linear polarizations focused by a high numerical aperture lens. The effects of sample geometry on the sensitivity of TO measurement are addressed. A significantly higher sensitivity is demonstrated for nanowires as compared to thin layers. In-plane and out-of-plane strain profiles in single nanowires are obtained through the simultaneous probe of local TO and longitudinal-optical (LO) phonons. New insights into strained nanowires mechanical properties are inferred from the measured strain profiles.

  2. WDM-Coherent OCDMA over one single device based on short chip Super Structured Fiber Bragg Gratings.

    Science.gov (United States)

    Amaya, Waldimar; Pastor, Daniel; Baños, Rocio; Garcia-Munoz, Victor

    2011-11-21

    We theoretically propose and demonstrate experimentally a Coherent Direct Sequence OCDMA en/decoder for multi-channel WDM operation based on a single device. It presents a broadband spectral envelope and a periodic spectral pattern that can be employed for en/decoding multiple sub-bands simultaneously. Multi-channel operation is verified experimentally by means of Multi-Band Super Structured Fiber Bragg Gratings with binary phase encoded chips fabricated with 1mm inter-chip separation that provides 4x100 GHz ITU sub-band separation at 1.25 Gbps. The WDM-OCDMA system verification was carried out employing simultaneous encoding of four adjacent sub-bands and two different OCDMA codes. © 2011 Optical Society of America

  3. Direct monolithic integration of vertical single crystalline octahedral molecular sieve nanowires on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Carretero-Genevrier, Adrian [Institut des Nanotechnologies de Lyon (INL), UMR-CNRS 5270, Ecole Central de Lyon, Ecully (France); Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Sorbonne Univ., UPMC Univ. Paris 06, CNRS, College de France, Paris (France); Oro-Sole, Judith [Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Gazquez, Jaume [Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Magen, Cesar [Univ. de Zaragoza, Zaragoza (Spain); Miranda, Laura [Sorbonne Univ., UPMC Univ. Paris 06, CNRS, College de France, Paris (France); Puig, Teresa [Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Obradors, Xavier [Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Ferain, Etienne [Univ. Catholique de Louvain, Louvain-la-Neuve (Belgium); Sanchez, Clement [Sorbonne Univ., UPMC Univ. Paris 06, CNRS, College de France, Paris (France); Rodriguez-Carvajal, Juan [Institut Laue-Langevin, Grenoble Cedex (France); Mestres, Narcis [Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain)

    2013-12-13

    We developed an original strategy to produce vertical epitaxial single crystalline manganese oxide octahedral molecular sieve (OMS) nanowires with tunable pore sizes and compositions on silicon substrates by using a chemical solution deposition approach. The nanowire growth mechanism involves the use of track-etched nanoporous polymer templates combined with the controlled growth of quartz thin films at the silicon surface, which allowed OMS nanowires to stabilize and crystallize. α-quartz thin films were obtained after thermal activated crystallization of the native amorphous silica surface layer assisted by Sr2+- or Ba2+-mediated heterogeneous catalysis in the air at 800 °C. These α-quartz thin films work as a selective template for the epitaxial growth of randomly oriented vertical OMS nanowires. Furthermore, the combination of soft chemistry and epitaxial growth opens new opportunities for the effective integration of novel technological functional tunneled complex oxides nanomaterials on Si substrates.

  4. Ultra-thin chip technology and applications

    CERN Document Server

    2010-01-01

    Ultra-thin chips are the "smart skin" of a conventional silicon chip. This book shows how very thin and flexible chips can be fabricated and used in many new applications in microelectronics, microsystems, biomedical and other fields. It provides a comprehensive reference to the fabrication technology, post processing, characterization and the applications of ultra-thin chips.

  5. On-chip optical phase locking of single growth monolithically integrated Slotted Fabry Perot lasers.

    Science.gov (United States)

    Morrissey, P E; Cotter, W; Goulding, D; Kelleher, B; Osborne, S; Yang, H; O'Callaghan, J; Roycroft, B; Corbett, B; Peters, F H

    2013-07-15

    This work investigates the optical phase locking performance of Slotted Fabry Perot (SFP) lasers and develops an integrated variable phase locked system on chip for the first time to our knowledge using these lasers. Stable phase locking is demonstrated between two SFP lasers coupled on chip via a variable gain waveguide section. The two lasers are biased differently, one just above the threshold current of the device with the other at three times this value. The coupling between the lasers can be controlled using the variable gain section which can act as a variable optical attenuator or amplifier depending on bias. Using this, the width of the stable phase locking region on chip is shown to be variable.

  6. Co-Design Method and Wafer-Level Packaging Technique of Thin-Film Flexible Antenna and Silicon CMOS Rectifier Chips for Wireless-Powered Neural Interface Systems

    Directory of Open Access Journals (Sweden)

    Kenji Okabe

    2015-12-01

    Full Text Available In this paper, a co-design method and a wafer-level packaging technique of a flexible antenna and a CMOS rectifier chip for use in a small-sized implantable system on the brain surface are proposed. The proposed co-design method optimizes the system architecture, and can help avoid the use of external matching components, resulting in the realization of a small-size system. In addition, the technique employed to assemble a silicon large-scale integration (LSI chip on the very thin parylene film (5 μm enables the integration of the rectifier circuits and the flexible antenna (rectenna. In the demonstration of wireless power transmission (WPT, the fabricated flexible rectenna achieved a maximum efficiency of 0.497% with a distance of 3 cm between antennas. In addition, WPT with radio waves allows a misalignment of 185% against antenna size, implying that the misalignment has a less effect on the WPT characteristics compared with electromagnetic induction.

  7. Silicon microphotonic waveguides

    International Nuclear Information System (INIS)

    Ta'eed, V.; Steel, M.J.; Grillet, C.; Eggleton, B.; Du, J.; Glasscock, J.; Savvides, N.

    2004-01-01

    Full text: Silicon microphotonic devices have been drawing increasing attention in the past few years. The high index-difference between silicon and its oxide (Δn = 2) suggests a potential for high-density integration of optical functions on to a photonic chip. Additionally, it has been shown that silicon exhibits strong Raman nonlinearity, a necessary property as light interaction can occur only by means of nonlinearities in the propagation medium. The small dimensions of silicon waveguides require the design of efficient tapers to couple light to them. We have used the beam propagation method (RSoft BeamPROP) to understand the principles and design of an inverse-taper mode-converter as implemented in several recent papers. We report on progress in the design and fabrication of silicon-based waveguides. Preliminary work has been conducted by patterning silicon-on-insulator (SOI) wafers using optical lithography and reactive ion etching. Thus far, only rib waveguides have been designed, as single-mode ridge-waveguides are beyond the capabilities of conventional optical lithography. We have recently moved to electron beam lithography as the higher resolutions permitted will provide the flexibility to begin fabricating sub-micron waveguides

  8. Injection molded polymer chip for electrochemical and electrophysiological recordings from single cells

    DEFF Research Database (Denmark)

    Tanzi, Simone; Larsen, Simon Tylsgaard; Taboryski, Rafael J.

    We present a novel method to fabricate an all in polymer injection molded chip for electrochemical cell recordings and lateral cell trapping. The complete device is molded in thermoplastic polymer and it results from assembling two halves. We tested spin-coated conductive polymer poly(3...

  9. Friction and metal transfer for single-crystal silicon carbide in contact with various metals in vacuum

    International Nuclear Information System (INIS)

    Miyoshi, K.; Buckley, D.H.

    1978-04-01

    Sliding friction experiments were conducted with single-crystal silicon carbide in contact with transition metals (tungsten, iron, rhodium, nickel, titanium, and cobalt), copper, and aluminum. Results indicate the coefficient of friction for a silicon carbide-metal system is related to the d bond character and relative chemical activity of the metal. The more active the metal, the higher the coefficient of friction. All the metals examined transferred to the surface of silicon carbide in sliding. The chemical activity of metal to silicon and carbon and shear modulus of the metal may play important roles in metal transfer and the form of the wear debris. The less active metal is, and the greater resistance to shear it has, with the exception of rhodium and tungsten, the less transfer to silicon carbide

  10. Development of Single-Sided Silicon Detectors in the Emulsion-Hybrid System at J-PARC

    Science.gov (United States)

    Lee, J. Y.; Ahn, J. K.; Ekawa, H.; Han, Y. C.; Hasegawa, S.; Hayakawa, S.; Hayakawa, T.; Hosomi, K.; Hwang, S. H.; Imai, K.; Ito, K.; Kim, M. H.; Kim, S. H.; Kiuchi, R.; Moon, T. J.; Nakazawa, K.; Oue, K.; Sako, H.; Sato, S.; Sugimura, H.; Tanida, K.; Watabe, T.

    A new single-sided silicon micro-strip detector (SSD) is being developed at the J-PARC K1.8 beam line for an emulsion-counter hybrid experiment (J-PARC E07). The SSD will be mainly used for vetex measurements in emulsion plates. Two prototypes of SSD have been fabricated to check the performance of the circuit board and silicon sensors. The first prototype consists of only one layer of a silicon sensor whereas the second prototype consists of two layers of silicon sensors. The final product will be a stack of 4 layers of silicon sensors in the order of X-Y-X-Y. The first and second prototypes of SSD have been tested and the final product will be fabricated based on the test result.

  11. SEM-induced shrinkage and site-selective modification of single-crystal silicon nanopores

    Science.gov (United States)

    Chen, Qi; Wang, Yifan; Deng, Tao; Liu, Zewen

    2017-07-01

    Solid-state nanopores with feature sizes around 5 nm play a critical role in bio-sensing fields, especially in single molecule detection and sequencing of DNA, RNA and proteins. In this paper we present a systematic study on shrinkage and site-selective modification of single-crystal silicon nanopores with a conventional scanning electron microscope (SEM). Square nanopores with measurable sizes as small as 8 nm × 8 nm and rectangle nanopores with feature sizes (the smaller one between length and width) down to 5 nm have been obtained, using the SEM-induced shrinkage technique. The analysis of energy dispersive x-ray spectroscopy and the recovery of the pore size and morphology reveal that the grown material along with the edge of the nanopore is the result of deposition of hydrocarbon compounds, without structural damage during the shrinking process. A simplified model for pore shrinkage has been developed based on observation of the cross-sectional morphology of the shrunk nanopore. The main factors impacting on the task of controllably shrinking the nanopores, such as the accelerating voltage, spot size, scanned area of e-beam, and the initial pore size have been discussed. It is found that single-crystal silicon nanopores shrink linearly with time under localized irradiation by SEM e-beam in all cases, and the pore shrinkage rate is inversely proportional to the initial equivalent diameter of the pore under the same e-beam conditions.

  12. Nanopore arrays in a silicon membrane for parallel single-molecule detection: DNA translocation.

    Science.gov (United States)

    Zhang, Miao; Schmidt, Torsten; Jemt, Anders; Sahlén, Pelin; Sychugov, Ilya; Lundeberg, Joakim; Linnros, Jan

    2015-08-07

    Optical nanopore sensing offers great potential in single-molecule detection, genotyping, or DNA sequencing for high-throughput applications. However, one of the bottle-necks for fluorophore-based biomolecule sensing is the lack of an optically optimized membrane with a large array of nanopores, which has large pore-to-pore distance, small variation in pore size and low background photoluminescence (PL). Here, we demonstrate parallel detection of single-fluorophore-labeled DNA strands (450 bps) translocating through an array of silicon nanopores that fulfills the above-mentioned requirements for optical sensing. The nanopore array was fabricated using electron beam lithography and anisotropic etching followed by electrochemical etching resulting in pore diameters down to ∼7 nm. The DNA translocation measurements were performed in a conventional wide-field microscope tailored for effective background PL control. The individual nanopore diameter was found to have a substantial effect on the translocation velocity, where smaller openings slow the translocation enough for the event to be clearly detectable in the fluorescence. Our results demonstrate that a uniform silicon nanopore array combined with wide-field optical detection is a promising alternative with which to realize massively-parallel single-molecule detection.

  13. Fabrication of double-dot single-electron transistor in silicon nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Mingyu; Kaizawa, Takuya; Arita, Masashi [Graduate School of Information Science and Technology, Hokkaido Univ., Sapporo, 060-0814 (Japan); Fujiwara, Akira; Ono, Yukinori [NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, 243-0198 (Japan); Inokawa, Hiroshi [Research Institute of Electronics, Shizuoka Univ., 3-5-1, Johoku, Hamamatsu, 432-8011 (Japan); Choi, Jung-Bum [Physics and Research Institute of NanoScience and Technology, Chungbuk National Univ., Cheongju, Chungbuk 361-763 (Korea, Republic of); Takahashi, Yasuo, E-mail: y-taka@nano.ist.hokudai.ac.j [Graduate School of Information Science and Technology, Hokkaido Univ., Sapporo, 060-0814 (Japan)

    2010-01-01

    We propose a simple method for fabricating Si single-electron transistors (SET) with coupled dots by means of a pattern-dependent-oxidation (PADOX) method. The PADOX method is known to convert a small one-dimensional Si wire formed on a silicon-on-insulator (SOI) substrate into a SET automatically. We fabricated a double-dot Si SET when we oxidized specially designed Si nanowires formed on SOI substrates. We analyzed the measured electrical characteristics by fitting the measurement and simulation results and confirmed the double-dot formation and the position of the two dots in the Si wire.

  14. Dissolution chemistry and biocompatibility of single-crystalline silicon nanomembranes and associated materials for transient electronics.

    Science.gov (United States)

    Hwang, Suk-Won; Park, Gayoung; Edwards, Chris; Corbin, Elise A; Kang, Seung-Kyun; Cheng, Huanyu; Song, Jun-Kyul; Kim, Jae-Hwan; Yu, Sooyoun; Ng, Joanne; Lee, Jung Eun; Kim, Jiyoung; Yee, Cassian; Bhaduri, Basanta; Su, Yewang; Omennetto, Fiorenzo G; Huang, Yonggang; Bashir, Rashid; Goddard, Lynford; Popescu, Gabriel; Lee, Kyung-Mi; Rogers, John A

    2014-06-24

    Single-crystalline silicon nanomembranes (Si NMs) represent a critically important class of material for high-performance forms of electronics that are capable of complete, controlled dissolution when immersed in water and/or biofluids, sometimes referred to as a type of "transient" electronics. The results reported here include the kinetics of hydrolysis of Si NMs in biofluids and various aqueous solutions through a range of relevant pH values, ionic concentrations and temperatures, and dependence on dopant types and concentrations. In vitro and in vivo investigations of Si NMs and other transient electronic materials demonstrate biocompatibility and bioresorption, thereby suggesting potential for envisioned applications in active, biodegradable electronic implants.

  15. Space-qualified silicon avalanche-photodiode single-photon-counting modules

    Science.gov (United States)

    Sun, Xiaoli; Krainak, Michael A.; Abshire, James B.; Spinhirne, James D.; Trottier, Claude; Davies, Murray; Dautet, Henri; Allan, Graham R.; Lukemire, Alan T.; Vandiver, James C.

    2004-09-01

    A space-qualified silicon avalanche-photodiode (APD) based single-photon-counting-module (SPCM) was developed for the Geoscience Laser Altimeter System (GLAS) on board NASA's Ice, Cloud, and Land Elevation Satellite (ICESat). Numerous improvements were made over the commercially available SPCMs in both performance and reliability. The measured optoelectronic parameters include, 65% photon detection efficiency at the 532 nm wavelength, 15-17 mega-counts per second (Mcps) maximum count rate and less than 200 s-1 dark counts before exposure to space radiation.

  16. Subattoampere current induced by single ions in silicon oxide layers of nonvolatile memory cells

    International Nuclear Information System (INIS)

    Cellere, G.; Paccagnella, A.; Larcher, L.; Visconti, A.; Bonanomi, M.

    2006-01-01

    A single ion impinging on a thin silicon dioxide layer generates a number of electron/hole pairs proportional to its linear energy transfer coefficient. Defects generated by recombination can act as a conductive path for electrons that cross the oxide barrier, thanks to a multitrap-assisted mechanism. We present data on the dependence of this phenomenon on the oxide thickness by using floating gate memory arrays. The tiny number of excess electrons stored in these devices allows for extremely high sensitivity, impossible with any direct measurement of oxide leakage current. Results are of particular interest for next generation devices

  17. Fracture analysis of surface exfoliation on single crystal silicon irradiated by intense pulsed ion beam

    Science.gov (United States)

    Shen, Jie; Shahid, Ijaz; Yu, Xiao; Zhang, Jie; Zhong, Haowen; Cui, Xiaojun; Liang, Guoying; Yu, Xiang; Huang, Wanying; Yan, Sha; Zhang, Gaolong; Zhang, Xiaofu; Le, Xiaoyun

    2017-12-01

    Surface exfoliation was observed on single crystal silicon surface irradiated by Intense Pulsed Ion Beam (IPIB). As the strong transient thermal stress impact induced by IPIB was mainly attributed to the exfoliation, a micro scale model combined with thermal conduction and linear elastic fracture mechanics was built to analyze the thermal stress distribution along the energy deposition process. After computation with finite element method, J integral parameter was applied as the criterion for crack development. It was demonstrated that the exfoliation initiation calls for specific material, crack depth and IPIB parameter. The results are potentially valuable for beam/target selection and IPIB parameter optimization.

  18. High-aspect-ratio grooves fabricated in silicon by a single pass of femtosecond laser pulses

    International Nuclear Information System (INIS)

    Ma Yuncan; Shi Haitao; Si Jinhai; Ren Hai; Chen Tao; Chen Feng; Hou Xun

    2012-01-01

    High-aspect-ratio grooves have been fabricated in silicon by a single pass of femtosecond laser pulses in water and ambient air. Scanning electron microscopy and energy dispersive x-ray spectroscopy were employed to image for the morphology of the photoinduced grooves and analyze the chemical composition in the surrounding of the grooves. It was observed that the sidewall of the grooves fabricated in water was much smoother than that in ambient air, and there were homogeneous nano-scale protrusions on the sidewall of the grooves fabricated in water. Meanwhile, oxygen species, which was incorporated into the grooves fabricated in air, was not observed in those in water.

  19. Single photon timing resolution and detection efficiency of the IRST silicon photo-multipliers

    International Nuclear Information System (INIS)

    Collazuol, G.; Ambrosi, G.; Boscardin, M.; Corsi, F.; Dalla Betta, G.F.; Del Guerra, A.; Dinu, N.; Galimberti, M.; Giulietti, D.; Gizzi, L.A.; Labate, L.; Llosa, G.; Marcatili, S.; Morsani, F.; Piemonte, C.; Pozza, A.; Zaccarelli, L.; Zorzi, N.

    2007-01-01

    Silicon photo-multipliers (SiPM) consist in matrices of tiny, passive quenched avalanche photo-diode cells connected in parallel via integrated resistors and operated in Geiger mode. Novel types of SiPM are being developed at FBK-IRST (Trento, Italy). Despite their classical shallow junction n-on-p structure the devices are unique in their enhanced photo-detection efficiency (PDE) for short-wavelengths and in their low level of dark rate and excess noise factor. After a summary of the extensive SiPM characterization we will focus on the study of PDE and the single photon timing resolution

  20. Deflection of high energy channeled charged particles by elastically bent silicon single crystals

    International Nuclear Information System (INIS)

    Gibson, W.M.; Kim, I.J.; Pisharodoy, M.; Salman, S.M.; Sun, C.R.; Wang, G.H.; Wijayawardana, R.; Forster, J.S.; Mitchell, I.V.; Baker, S.I.; Carrigan, R.A. Jr.; Toohig, T.E.; Avdeichikov, V.V.; Ellison, J.A.; Siffert, P.

    1984-01-01

    An experiment has been carried out to observe the deflection of charged particles by planar channeling in bent single crystals of silicon for protons with energy up to 180 GeV. Anomolous loss of particles from the center point of a three point bending apparatus was observed at high incident particle energy. This effect has been exploited to fashion a 'dechanneling spectrometer' to study dechanneling effects due to centripital displacement of channeled particle trajectories in a bent crystal. The bending losses generally conform to the predictions of calculations based on a classical model. (orig.)

  1. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  2. All-silicon Michelson instrument on chip: Distance and surface profile measurement and prospects for visible light spectrometry

    Energy Technology Data Exchange (ETDEWEB)

    Malak, M.; Marty, F.; Bourouina, T. [Universite Paris-Est, Laboratoire ESYCOM, ESIEE Paris, Cite Descartes, 2 Boulevard Blaise Pascal, 93162 Noisy-le-Grand Cedex (France); Nouira, H.; Vailleau, G. [Laboratoire National de Metrologie et d' Essais, 1 rue Gaston Boissier, 75724 Paris Cedex 15 (France)

    2013-04-08

    A miniature Michelson interferometer is analyzed theoretically and experimentally. The fabricated micro-interferometer is incorporated at the tip of a monolithic silicon probe to achieve contactless distance measurements and surface profilometry. For infrared operation, two approaches are studied, based on the use of monochromatic light and wavelength sweep, respectively. A theoretical model is devised to depict the system characteristics taking into account Gaussian beam divergence and light spot size. Furthermore, preliminary results using visible light demonstrate operation of the probe as a visible light spectrometer, despite silicon absorbance, thanks to the micrometer thickness involved in the beam splitter.

  3. All-silicon Michelson instrument on chip: Distance and surface profile measurement and prospects for visible light spectrometry

    International Nuclear Information System (INIS)

    Malak, M.; Marty, F.; Bourouina, T.; Nouira, H.; Vailleau, G.

    2013-01-01

    A miniature Michelson interferometer is analyzed theoretically and experimentally. The fabricated micro-interferometer is incorporated at the tip of a monolithic silicon probe to achieve contactless distance measurements and surface profilometry. For infrared operation, two approaches are studied, based on the use of monochromatic light and wavelength sweep, respectively. A theoretical model is devised to depict the system characteristics taking into account Gaussian beam divergence and light spot size. Furthermore, preliminary results using visible light demonstrate operation of the probe as a visible light spectrometer, despite silicon absorbance, thanks to the micrometer thickness involved in the beam splitter.

  4. An ultra-small, low-power, all-optical flip-flop memory on a silicon chip

    DEFF Research Database (Denmark)

    Liu, Liu; Kumar, R.; Huybrechts, K.

    2010-01-01

    Ultra-small, low-power, all-optical switching and memory elements, such as all-optical flip-flops, as well as photonic integrated circuits of many such elements, are in great demand for all-optical signal buffering, switching and processing. Silicon-on-insulator is considered to be a promising pl...

  5. Study of Thermally Enhanced 2.5D Packages with Multi-chips Molded on Silicon Interposer

    Science.gov (United States)

    Zhang, H. Y.; Zhang, X. W.

    2015-07-01

    The 2.5D package with distributed vias on silicon interposer has received great attention due to its potential for heterogeneous integration. The overmolded 2.5D package protects the silicon die and interposer from environmental damage, which, on the other hand, induces undesirable thermal resistance due to low thermal conductivity of the molding compound. In this paper, a thermally enhanced 2.5D package with exposed die is proposed, fabricated and examined from the thermal enhancement viewpoint. The high power thermal test die was first assembled on a silicon interposer with through silicon vias and connected to the substrate, which was followed by the overmolding and back-grinding processes to form the partially molded (PM) package with exposed die for direct heat sink attachments. Experiments were conducted to examine the thermal performance under different thermal conditions. Under natural convection without thermal enhancement, there was no performance difference between the PM package and the overmolded package. However, when the package top was mounted with a thermally enhanced structure such as a pin fin heat sink, the thermal resistance of PM package was significantly reduced. The advantage was more prominent with the attachment of a high performance liquid cooling heat sink. Thermal simulation models were also constructed to examine the thermal performances under different test conditions, and the realistic thermal interface resistance of 0.5 Kcm2/W was estimated based on the package warpage. The computed thermal resistances agreed with measurement results.

  6. Influence of temperature on the anisotropic cutting behaviour of single crystal silicon: A molecular dynamics simulation investigation

    OpenAIRE

    Chavoshi, Saeed Zare; Goel, Saurav; Luo, Xichun

    2016-01-01

    Using molecular dynamics (MD) simulation, this paper investigates anisotropic cutting behaviour of single crystal silicon in vacuum under a wide range of substrate temperatures (300 K, 500 K, 750 K, 850 K, 1173 K and 1500 K). Specific cutting energy, force ratio, stress in the cutting zone and cutting temperature were the indicators used to quantify the differences in the cutting behaviour of silicon. A key observation was that the specific cutting energy required to cut the (1 1 1) surface o...

  7. Multi-Channel 40 Gbit/s NRZ-DPSK Demodulation Using a Single Silicon Microring Resonator

    DEFF Research Database (Denmark)

    Ding, Yunhong; Xu, Jing; Peucheret, Christophe

    2011-01-01

    We comprehensively analyze the demodulation of wavelength division multiplexed (WDM) non return-to-zero differential phase-shift keying (NRZ-DPSK) signals by a single microring resonator. Simultaneous demodulation of multiple 40 Gbit/s WDM NRZ-DPSK channels is demonstrated using a single silicon...

  8. Influence of ITO-Silver Wire Electrode Structure on the Performance of Single-Crystal Silicon Solar Cells

    Directory of Open Access Journals (Sweden)

    Wern-Dare Jheng

    2012-01-01

    Full Text Available This study aimed to explore the effect of various electrode forms on single-crystal silicon solar cells by changing their front and back electrode structures. The high light penetration depth of the Indium Tin Oxide (ITO and the high conductivity of the silver wire that were coated on the single crystal silicon solar cells increased photoelectron export, thus increasing the efficiency of the solar cell. The experiment utilized a sol-gel solution containing phosphorus that was spin coated on single-crystal silicon wafers; this phosphorus also served as a phosphorus diffusion source. A p-n junction was formed after annealing at high temperature, and the substrate was coated with silver wires and ITO films of various structures to produce the electrodes. This study proposed that applying a heat treatment to the aluminum of back electrodes would result in a higher efficiency for single-crystal silicon solar cells, whereas single-crystal silicon solar cells containing front electrodes with ITO film coated with silver wires would result in efficiencies that are higher than those achieved using pure ITO thin-film electrodes.

  9. Investigation of a new low cost and low consumption single poly-silicon memory

    Directory of Open Access Journals (Sweden)

    Patrick Calenzo

    2010-10-01

    Full Text Available In this paper is presented an investigation on a new low cost and voltage consumption single poly-silicon memory cell for passive RFID (Radio Frequency IDentificationapplications. This structure is low cost due to its single poly-silicon design. This memory cell has two particularities : the first one is that no deported capacitor is necessary to program this cell which allows to reduce the structure size to 1.1μm². The second one is the way the cell is erased. A Zener diode is used to generate carriers in order to be injected into the floating gate. This Zener diode is one of the key points for the functionality that has to be validated with some electrical trials. These trials permit to integrate and use the Zener diodes measured in simulations of the complete memory cell. This is done to validate the best candidate between the Zener diodes used for the cell and highlight the efficiency in consumption and rapidity to erase the cell. Besides, the writing and the reading cases are simulated in order to show the low consumption required by the cell during these phases.

  10. Temperature dependent evolution of wrinkled single-crystal silicon ribbons on shape memory polymers.

    Science.gov (United States)

    Wang, Yu; Yu, Kai; Qi, H Jerry; Xiao, Jianliang

    2017-10-25

    Shape memory polymers (SMPs) can remember two or more distinct shapes, and thus can have a lot of potential applications. This paper presents combined experimental and theoretical studies on the wrinkling of single-crystal Si ribbons on SMPs and the temperature dependent evolution. Using the shape memory effect of heat responsive SMPs, this study provides a method to build wavy forms of single-crystal silicon thin films on top of SMP substrates. Silicon ribbons obtained from a Si-on-insulator (SOI) wafer are released and transferred onto the surface of programmed SMPs. Then such bilayer systems are recovered at different temperatures, yielding well-defined, wavy profiles of Si ribbons. The wavy profiles are shown to evolve with time, and the evolution behavior strongly depends on the recovery temperature. At relatively low recovery temperatures, both wrinkle wavelength and amplitude increase with time as evolution progresses. Finite element analysis (FEA) accounting for the thermomechanical behavior of SMPs is conducted to study the wrinkling of Si ribbons on SMPs, which shows good agreement with experiment. Merging of wrinkles is observed in FEA, which could explain the increase of wrinkle wavelength observed in the experiment. This study can have important implications for smart stretchable electronics, wrinkling mechanics, stimuli-responsive surface engineering, and advanced manufacturing.

  11. Single molecule localization imaging of exosomes using blinking silicon quantum dots

    Science.gov (United States)

    Zong, Shenfei; Zong, Junzhu; Chen, Chen; Jiang, Xiaoyue; Zhang, Yizhi; Wang, Zhuyuan; Cui, Yiping

    2018-02-01

    Discovering new fluorophores, which are suitable for single molecule localization microscopy (SMLM) is important for promoting the applications of SMLM in biological or material sciences. Here, we found that silicon quantum dots (Si QDs) possess a fluorescence blinking behavior, making them an excellent candidate for SMLM. The Si QDs are fabricated using a facile microwave-assisted method. Blinking of Si QDs is confirmed by single particle fluorescence measurement and the spatial resolution achieved is about 30 nm. To explore the potential application of Si QDs as the nanoprobes for SMLM imaging, cell derived exosomes are chosen as the object owing to their small size (50-100 nm in diameter). Since CD63 is commonly presented on the membrane of exosomes, CD63 aptamers are attached to the surface of Si QDs to form nanoprobes which can specifically recognize exosomes. SMLM imaging shows that Si QDs based nanoprobes can indeed realize super resolved optical imaging of exosomes. More importantly, blinking of Si QDs is observed in water or PBS buffer with no need for special imaging buffers. Besides, considering that silicon is highly biocompatible, Si QDs should have minimal cytotoxicity. These features make Si QDs quite suitable for SMLM applications especially for live cell imaging.

  12. On-Chip All-Optical Passive 3.55 Gbit/s NRZ-to-PRZ Format Conversion Using a High-Q Silicon-Based Microring Resonator

    International Nuclear Information System (INIS)

    Yao, Zhai; Shao-Wu, Chen; Guang-Hui, Ren

    2010-01-01

    We report the experimental result of all-optical passive 3.55 Gbit/s non-return-to-zero (NRZ) to pseudo-return-to-zero (PRZ) format conversion using a high-quality-factor (Q-factor) silicon-based microring resonator notch filter on chip. The silicon-based microring resonator has 23800 Q-factor and 22 dB extinction ratio (ER), and the PRZ signals has about 108ps width and 4.98 dB ER

  13. Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

    Energy Technology Data Exchange (ETDEWEB)

    Llobet, Jordi; Pérez-Murano, Francesc, E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Institut de Microelectrònica de Barcelona (IMB-CNM CSIC), Campus UAB, E-08193 Bellaterra, Catalonia (Spain); Krali, Emiljana; Wang, Chen; Jones, Mervyn E.; Durrani, Zahid A. K., E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ (United Kingdom); Arbiol, Jordi [Institució Catalana de Recerca i Estudis Avançats (ICREA) and Institut Català de Nanociència i Nanotecnologia (ICN2), Campus UAB, 08193 Bellaterra, Catalonia (Spain); CELLS-ALBA Synchrotron Light Facility, 08290 Cerdanyola, Catalonia (Spain)

    2015-11-30

    Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.

  14. Memory effect in silicon time-gated single-photon avalanche diodes

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Mora, A.; Contini, D., E-mail: davide.contini@polimi.it; Di Sieno, L. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Tosi, A.; Boso, G.; Villa, F. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Pifferi, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); CNR, Istituto di Fotonica e Nanotecnologie, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

    2015-03-21

    We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

  15. The response of silicon PNCCD sensors with aluminium on-chip filter to visible light, UV- and X-ray radiation

    Energy Technology Data Exchange (ETDEWEB)

    Granato, Stefanie

    2012-10-18

    There are various scientific applications, from astronomical observations to free electron lasers, that make use of X-ray semiconductor detectors like PNCCDs. The PNCCD is a pixelized semiconductor detector for simultaneous X-ray imaging and spectroscopy. For the seven PNCCD cameras of the eROSITA space telescope, a radiation entrance window including an on-chip optical blocking filter has been designed. The blocking filter is a necessity to minimize electron generation by visible light and UV radiation affecting X-ray spectroscopy. A PNCCD with such a blocking filter has not been used so far in astronomy. The following work deals with the analysis of the response of PNCCDs with on-chip filter. This includes the study of photon absorption and emission processes as well as the transport of electrons inside the detector entrance window. Furthermore it comprises the experimental characterization of the detector properties regarding the attenuation of light as well as their X-ray spectral redistribution function and quantum efficiency. With the ability to reveal the involved physical processes, the PNCCD is subject of analysis and measurement device at the same time. In addition to the results of the measurements, simulations of the solid state physics inside the detector are presented. A Geant4 Monte-Carlo code is extended by the treatment of charge loss in the entrance window and is verified by comparison with experimental data. Reproducing the chain of processes from photon absorption to charge collection, this work provides a detailed understanding of the formation of PNCCD spectra. The spectral features observed in the measurements are attributed to their point of origin inside the detector volume and explained by the model. The findings of this work allow high precision analysis of spectra of silicon detectors, e.g. of the eROSITA data, based on the presented detailed spectral response model.

  16. The response of silicon PNCCD sensors with aluminium on-chip filter to visible light, UV- and X-ray radiation

    International Nuclear Information System (INIS)

    Granato, Stefanie

    2012-01-01

    There are various scientific applications, from astronomical observations to free electron lasers, that make use of X-ray semiconductor detectors like PNCCDs. The PNCCD is a pixelized semiconductor detector for simultaneous X-ray imaging and spectroscopy. For the seven PNCCD cameras of the eROSITA space telescope, a radiation entrance window including an on-chip optical blocking filter has been designed. The blocking filter is a necessity to minimize electron generation by visible light and UV radiation affecting X-ray spectroscopy. A PNCCD with such a blocking filter has not been used so far in astronomy. The following work deals with the analysis of the response of PNCCDs with on-chip filter. This includes the study of photon absorption and emission processes as well as the transport of electrons inside the detector entrance window. Furthermore it comprises the experimental characterization of the detector properties regarding the attenuation of light as well as their X-ray spectral redistribution function and quantum efficiency. With the ability to reveal the involved physical processes, the PNCCD is subject of analysis and measurement device at the same time. In addition to the results of the measurements, simulations of the solid state physics inside the detector are presented. A Geant4 Monte-Carlo code is extended by the treatment of charge loss in the entrance window and is verified by comparison with experimental data. Reproducing the chain of processes from photon absorption to charge collection, this work provides a detailed understanding of the formation of PNCCD spectra. The spectral features observed in the measurements are attributed to their point of origin inside the detector volume and explained by the model. The findings of this work allow high precision analysis of spectra of silicon detectors, e.g. of the eROSITA data, based on the presented detailed spectral response model.

  17. The fabrication and characterization of adjustable nanogaps between gold electrodes on chip for electrical measurement of single molecules

    International Nuclear Information System (INIS)

    Tian Jinghua; Yang Yang; Liu Bo; Wu Deyin; Tian Zhongqun; Schoellhorn, Bernd; Maisonhaute, Emmanuel; Muns, Anna Serra; Chen Yong; Amatore, Christian; Tao, Nong-Jian

    2010-01-01

    This work reports on a new method to fabricate mechanically controllable break junctions (MCBJ) with finely adjustable nanogaps between two gold electrodes on solid state chips for characterizing electron transport properties of single molecules. The simple, low cost, robust and reproducible fabrication method combines conventional photolithography, chemical etching and electrodeposition to produce suspended electrodes separated with nanogaps. The MCBJ devices fabricated by the method can undergo many cycles in which the nanogap width can be precisely and repeatedly varied from zero to several nanometers. The method improves the success rate of the MCBJ experiments. Using these devices the electron transport properties of a typical molecular system, commercially available benzene-1,4-dithiol (BDT), have been studied. The I-V and G-V characteristic curves of BDT and the conductance value for a single BDT molecule established the excellent device suitability for molecular electronics research.

  18. The fabrication and characterization of adjustable nanogaps between gold electrodes on chip for electrical measurement of single molecules

    Energy Technology Data Exchange (ETDEWEB)

    Tian Jinghua; Yang Yang; Liu Bo; Wu Deyin; Tian Zhongqun [State Key Laboratory of Physical Chemistry of Solid Surfaces and LIA CNRS XiamENS ' NanoBioChem' , College of Chemistry and Chemical Engineering, Xiamen University, Xiamen 361005, Fujian (China); Schoellhorn, Bernd; Maisonhaute, Emmanuel; Muns, Anna Serra; Chen Yong; Amatore, Christian [UMR CNRS 8640 ' PASTEUR' and LIA CNRS XiamENS ' NanoBioChem' , Ecole Normale Superieure, Universite Pierre et Marie Curie-Paris 6, 24 rue Lhomond, 75231 Paris Cedex 05 (France); Tao, Nong-Jian, E-mail: zqtian@xmu.edu.cn, E-mail: christian.amatore@ens.fr [Ira A Fulton School of Engineering and Center for Bioelectronics and Biosensors, Biodesign Institute, Arizona State University, Tempe, AZ 85287-6206 (United States)

    2010-07-09

    This work reports on a new method to fabricate mechanically controllable break junctions (MCBJ) with finely adjustable nanogaps between two gold electrodes on solid state chips for characterizing electron transport properties of single molecules. The simple, low cost, robust and reproducible fabrication method combines conventional photolithography, chemical etching and electrodeposition to produce suspended electrodes separated with nanogaps. The MCBJ devices fabricated by the method can undergo many cycles in which the nanogap width can be precisely and repeatedly varied from zero to several nanometers. The method improves the success rate of the MCBJ experiments. Using these devices the electron transport properties of a typical molecular system, commercially available benzene-1,4-dithiol (BDT), have been studied. The I-V and G-V characteristic curves of BDT and the conductance value for a single BDT molecule established the excellent device suitability for molecular electronics research.

  19. Analysis of single-cell differences by use of an on-chip microculture system and optical trapping.

    Science.gov (United States)

    Wakamoto, Y; Inoue, I; Moriguchi, H; Yasuda, K

    2001-09-01

    A method is described for continuous observation of isolated single cells that enables genetically identical cells to be compared; it uses an on-chip microculture system and optical tweezers. Photolithography is used to construct microchambers with 5-microm-high walls made of thick photoresist (SU-8) on the surface of a glass slide. These microchambers are connected by a channel through which cells are transported, by means of optical tweezers, from a cultivation microchamber to an analysis microchamber, or from the analysis microchamber to a waste microchamber. The microchambers are covered with a semi-permeable membrane to separate them from nutrient medium circulating through a "cover chamber" above. Differential analysis of isolated direct descendants of single cells showed that this system could be used to compare genetically identical cells under contamination-free conditions. It should thus help in the clarification of heterogeneous phenomena, for example unequal cell division and cell differentiation.

  20. A simulation study on performance evaluation of single-stage LiBr–H2O vapor absorption heat pump for chip cooling

    Directory of Open Access Journals (Sweden)

    Manu S.

    2016-12-01

    Full Text Available The growth of Lithium Bromide–Water (LiBr–H2O absorption based heat pump is encouraged for the necessity of extracting high heat from the electronic chips. This paper presents a simulation study of single-stage LiBr–H2O vapor absorption heat pump for chip cooling. In this study, a detailed thermodynamic analysis of the single-stage LiBr–H2O vapor absorption heat pump for chip cooling in the nonexistence of solution heat exchanger was performed and a user-friendly graphical user interface (GUI package including visual components was developed by using MATlab (2008b. The influence of chip temperature on COP (Coefficient of Performance, flow rates and conductance was examined by using the developed package. The model is validated by using the values available in the literature and indicates that there is a greater reduction in the absorber load. The influence of chip temperature on the performance and thermal loads of individual components was studied and it was concluded that, COP increases from 0.7145 to 0.8421 with an increase in chip temperature.

  1. Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

    2017-07-01

    We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

  2. arXiv Single-electron and single-photon sensitivity with a silicon Skipper CCD

    CERN Document Server

    Tiffenberg, Javier; Drlica-Wagner, Alex; Essig, Rouven; Guardincerri, Yann; Holland, Steve; Volansky, Tomer; Yu, Tien-Tien

    2017-09-26

    We have developed ultralow-noise electronics in combination with repetitive, nondestructive readout of a thick, fully depleted charge-coupled device (CCD) to achieve an unprecedented noise level of 0.068  e- rms/pixel. This is the first time that discrete subelectron readout noise has been achieved reproducible over millions of pixels on a stable, large-area detector. This enables the contemporaneous, discrete, and quantized measurement of charge in pixels, irrespective of whether they contain zero electrons or thousands of electrons. Thus, the resulting CCD detector is an ultra-sensitive calorimeter. It is also capable of counting single photons in the optical and near-infrared regime. Implementing this innovative non-destructive readout system has a negligible impact on CCD design and fabrication, and there are nearly immediate scientific applications. As a particle detector, this CCD will have unprecedented sensitivity to low-mass dark matter particles and coherent neutrino-nucleus scattering, while ...

  3. Single-Seed Casting Large-Size Monocrystalline Silicon for High-Efficiency and Low-Cost Solar Cells

    Directory of Open Access Journals (Sweden)

    Bing Gao

    2015-09-01

    Full Text Available To grow high-quality and large-size monocrystal-line silicon at low cost, we proposed a single-seed casting technique. To realize this technique, two challenges—polycrystalline nucleation on the crucible wall and dislocation multiplication inside the crystal—needed to be addressed. Numerical analysis was used to develop solutions for these challenges. Based on an optimized furnace structure and operating conditions from numerical analysis, experiments were performed to grow monocrystalline silicon using the single-seed casting technique. The results revealed that this technique is highly superior to the popular high-performance multicrystalline and multiseed casting mono-like techniques.

  4. Metal-Catalyst-Free Synthesis and Characterization of Single-Crystalline Silicon Oxynitride Nanowires

    Directory of Open Access Journals (Sweden)

    Shuang Xi

    2012-01-01

    Full Text Available Large quantities of single-crystal silicon oxynitride nanowires with high N concentration have been synthesized directly on silicon substrate at 1200°C without using any metal catalyst. The diameter of these ternary nanowires is ranging from 10 to 180 nm with log-normal distribution, and the length of these nanowires varies from a few hundreds of micrometers to several millimeters. A vapor-solid mechanism was proposed to explain the growth of the nanowires. These nanowires are grown to form a disordered mat with an ultrabright white nonspecular appearance. The mat demonstrates highly diffusive reflectivity with the optical reflectivity of around 80% over the whole visible wavelength, which is comparable to the most brilliant white beetle scales found in nature. The whiteness might be resulted from the strong multiscattering of a large fraction of incident light on the disordered nanowire mat. These ultra-bright white nanowires could form as reflecting surface to meet the stringent requirements of bright-white light-emitting-diode lighting for higher optical efficiency. They can also find applications in diverse fields such as sensors, cosmetics, paints, and tooth whitening.

  5. Lightweight and High-Resolution Single Crystal Silicon Optics for X-ray Astronomy

    Science.gov (United States)

    Zhang, William W.; Biskach, Michael P.; Chan, Kai-Wing; Mazzarella, James R.; McClelland, Ryan S.; Riveros, Raul E.; Saha, Timo T.; Solly, Peter M.

    2016-01-01

    We describe an approach to building mirror assemblies for next generation X-ray telescopes. It incorporates knowledge and lessons learned from building existing telescopes, including Chandra, XMM-Newton, Suzaku, and NuSTAR, as well as from our direct experience of the last 15 years developing mirror technology for the Constellation-X and International X-ray Observatory mission concepts. This approach combines single crystal silicon and precision polishing, thus has the potential of achieving the highest possible angular resolution with the least possible mass. Moreover, it is simple, consisting of several technical elements that can be developed independently in parallel. Lastly, it is highly amenable to mass production, therefore enabling the making of telescopes of very large photon collecting areas.

  6. Study of the signal formation in single-type column 3D silicon detectors

    International Nuclear Information System (INIS)

    Piemonte, Claudio; Boscardin, Maurizio; Bosisio, Luciano; Dalla Betta, Gian-Franco; Pozza, Alberto; Ronchin, Sabina; Zorzi, Nicola

    2007-01-01

    Because of their superior radiation resistance, three-dimensional (3D) silicon sensors are receiving more and more interest for application in the innermost layers of tracker systems for experiments running in very high luminosity colliders. Their short electrode distance allows for both a low depletion voltage and a high charge collection efficiency even at extremely high radiation fluences. In order to fully understand the properties of a 3D detector, a thorough characterization of the signal formation mechanism is of paramount importance. In this work the shape of the current induced by localized and uniform charge depositions in a single-type column 3D detector is studied. A first row estimation is given applying the Ramo theorem, then a more complete TCAD simulation is used to provide a more realistic pulse shape

  7. Hall mobility reduction in single-crystalline silicon gradually compensated by thermal donors activation

    Science.gov (United States)

    Veirman, J.; Dubois, S.; Enjalbert, N.; Garandet, J. P.; Heslinga, D. R.; Lemiti, M.

    2010-06-01

    This letter focuses on the variation of the Hall majority carrier mobility with the dopant compensation level in purely Boron-doped Czochralski grown silicon single crystals. Compensation was varied continuously at the sample scale via a step by step activation of the oxygen-based thermal donors. At room temperature, we show a strong drop in mobility for high compensation levels in both p- and n-type Si. Mobility models taking into account carrier scattering on ionized impurities and phonons could not reproduce this drop. We conclude that a specific effect of compensation must be taken into account to explain the observed behaviour. We qualitatively discuss physical mechanisms susceptible to reduce mobility in highly compensated Si.

  8. Electronic properties of dislocations introduced mechanically at room temperature on a single crystal silicon surface

    International Nuclear Information System (INIS)

    Ogawa, Masatoshi; Kamiya, Shoji; Izumi, Hayato; Tokuda, Yutaka

    2012-01-01

    This paper focuses on the effects of temperature and environment on the electronic properties of dislocations in n-type single crystal silicon near the surface. Deep level transient spectroscopy (DLTS) analyses were carried out with Schottky electrodes and p + -n junctions. The trap level, originally found at E C -0.50 eV (as commonly reported), shifted to a shallower level at E C -0.23 eV after a heat treatment at 350 K in an inert environment. The same heat treatment in lab air, however, did not cause any shift. The trap level shifted by the heat treatment in an inert environment was found to revert back to the original level when the specimens were exposed to lab air again. Therefore, the intrinsic trap level is expected to occur at E C -0.23 eV and shift sensitively with gas adsorption in air.

  9. A Single-Chip 64-Channel Ultrasound RX-Beamformer Including Analog Front-End and an LUT for Non-Uniform ADC-Sample-Clock Generation.

    Science.gov (United States)

    Kim, Yoon-Jee; Cho, Sung-Eun; Um, Ji-Yong; Chae, Min-Kyun; Bang, Jihoon; Song, Jongkeun; Jeon, Taeho; Kim, Byungsub; Sim, Jae-Yoon; Park, Hong-June

    2017-02-01

    A 64-channel RX digital beamformer was implemented in a single chip for 3-D ultrasound medical imaging using 2-D phased-array transducers. The RX beamformer chip includes 64 analog front-end branches including 64 non-uniform sampling ADCs, a FIFO/Adder, and an on-chip look-up table (LUT). The LUT stores the information on the rising edge timing of the non-uniform ADC sampling clocks. To include the LUT inside the beamformer chip, the LUT size was reduced by around 240 times by approximating an ADC-sample-time profile w.r.t. focal points (FP) along a scanline (SL) for a channel into a piece-wise linear form. The maximum error between the approximated and accurate sample times of ADC is eight times the sample time resolution (Ts) that is 1/32 of the ultrasound signal period in this work. The non-uniform sampling reduces the FIFO size required for digital beamforming by around 20 times. By applying a 9-dot image from Field-II program and 2-D ultrasound phantom images to the fabricated RX beamformer chip, the original images were successfully reconstructed from the measured output. The chip in a 0.13-um CMOS occupies 30.25 [Formula: see text] and consumes 605 mW.

  10. ID-SERS Based Reference Method for Quantification of Large Biomolecules on a Single Chip

    Science.gov (United States)

    Yaghobian, Fatemeh; Stosch, Rainer; Henrion, André; Güttler, Bernd

    2010-08-01

    Accuracy and precision of quantitative SERS results have been significantly increased by applying a method based on the so-called isotope-dilution (ID) principle. In this ID-SERS approach, an isotopically labeled analogue of the target molecule (isotopologue) is spiked to the sample at a known concentration. Due to the slight difference in their molar masses, some Raman bands of the heavier isotopologue are red-shifted with respect to the same signals resulting from the unlabelled compound. As a result, spectra evaluation is reduced to the determination of intensity ratios rather than absolute intensities, and the unknown quantity of the analyte can be calculated from the known quantity of the standard. This procedure is of particular interest in the development of highly accurate reference procedures for metrology in chemistry. Because the sample is spiked prior to any further treatment, potential loss of material or matrix effects would equally affect both isotopologues, without influencing the final result. The method has been successfully applied for quantifying small diagnostic marker molecules like creatinine at their relevant serum concentration levels using silver colloids as SERS substrates. Now, the ID-SERS approach has been realized as a "one-chip" approach using "Bio-chips" made of intrinsically grown spherical silver nanoparticles with gaps less than 10 nm in between (Fig. 1). In addition, the scope of the method has been extended to larger biomolecules like peptides which will be shown using the example of the human growth-hormone (hGH) peptide T12 at physiologically relevant serum concentration levels (Fig. 2). Further developments towards the quantification of full proteins will also be reported.

  11. A Single-Chip Speech Dialogue Module and Its Evaluation on a Personal Robot, PaPeRo-Mini

    Science.gov (United States)

    Sato, Miki; Iwasawa, Toru; Sugiyama, Akihiko; Nishizawa, Toshihiro; Takano, Yosuke

    This paper presents a single-chip speech dialogue module and its evaluation on a personal robot. This module is implemented on an application processor that was developed primarily for mobile phones to provide a compact size, low power-consumption, and low cost. It performs speech recognition with preprocessing functions such as direction-of-arrival (DOA) estimation, noise cancellation, beamforming with an array of microphones, and echo cancellation. Text-to-speech (TTS) conversion is also equipped with. Evaluation results obtained on a new personal robot, PaPeRo-mini, which is a scale-down version of PaPeRo, demonstrate an 85% correct rate in DOA estimation, and as much as 54% and 30% higher speech recognition rates in noisy environments and during robot utterances, respectively. These results are shown to be comparable to those obtained by PaPeRo.

  12. Test-Beam Results on <100> Silicon Prototype Detectors with APV6 Front-End Chip Readout

    CERN Document Server

    Winkler, Matthias

    2000-01-01

    Results are presented using data collected during the X5 test-beam performed in August 1999. To achieve a good estimate of signal and noise values, the raw data are processed off-line by a dedicated reconstruction program. In particular, an efficient algorithm for pedestal, noise and common mode calculation was developed and tested. The intrinsic performances of an AC-coupled CMS silicon micro-strip multi-geometry prototype detector, with a <100> crystal orientation and a low resistivity ( 1~k Omega cm), are investigated. This detector was exposed to an irradiation fluence of 3 imes10^{14} p/cm ^2 , equivalent to 10 years of operation at LHC. The signal-to-noise ratio and the ghost rates per strip and per cm ^2 are presented, as a function of the bias voltage.

  13. Single-Event Effect Testing of the Cree C4D40120D Commercial 1200V Silicon Carbide Schottky Diode

    Science.gov (United States)

    Lauenstein, J.-M.; Casey, M. C.; Wilcox, E. P.; Kim, Hak; Topper, A. D.

    2014-01-01

    This study was undertaken to determine the single event effect (SEE) susceptibility of the commercial silicon carbide 1200V Schottky diode manufactured by Cree, Inc. Heavy-ion testing was conducted at the Texas A&M University Cyclotron Single Event Effects Test Facility (TAMU). Its purpose was to evaluate this device as a candidate for use in the Solar-Electric Propulsion flight project.

  14. Electron Spin Resonance Experiments on a Single Electron in Silicon Implanted with Phosphorous

    Science.gov (United States)

    Luhman, Dwight R.; Nguyen, K.; Tracy, L. A.; Carr, S.; Borchardt, J.; Bishop, N.; Ten Eyck, G.; Pluym, T.; Wendt, J.; Lilly, M. P.; Carroll, M. S.

    2015-03-01

    In this talk we will discuss the results of our ongoing experiments involving electron spin resonance (ESR) on a single electron in a natural silicon sample. The sample consists of an SET, defined by lithographic polysilicon gates, coupled to nearby phosphorous donors. The SET is used to detect charge transitions and readout the spin of the electron being investigated with ESR. The measurements were done with the sample at dilution refrigerator temperatures in the presence of a 1.3 T magnetic field. We will present data demonstrating Rabi oscillations of a single electron in this system as well as measurements of the coherence time, T2. We will also discuss our results using these and various other pulsing schemes in the context of a donor-SET system. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

  15. Quantifying the Traction Force of a Single Cell by Aligned Silicon Nanowire Array

    KAUST Repository

    Li, Zhou

    2009-10-14

    The physical behaviors of stationary cells, such as the morphology, motility, adhesion, anchorage, invasion and metastasis, are likely to be important for governing their biological characteristics. A change in the physical properties of mammalian cells could be an indication of disease. In this paper, we present a silicon-nanowire-array based technique for quantifying the mechanical behavior of single cells representing three distinct groups: normal mammalian cells, benign cells (L929), and malignant cells (HeLa). By culturing the cells on top of NW arrays, the maximum traction forces of two different tumor cells (HeLa, L929) have been measured by quantitatively analyzing the bending of the nanowires. The cancer cell exhibits a larger traction force than the normal cell by ∼20% for a HeLa cell and ∼50% for a L929 cell. The traction forces have been measured for the L929 cells and mechanocytes as a function of culture time. The relationship between cells extending area and their traction force has been investigated. Our study is likely important for studying the mechanical properties of single cells and their migration characteristics, possibly providing a new cellular level diagnostic technique. © 2009 American Chemical Society.

  16. Performance of silicon solar cells fabricated from multiple Czochralski ingots grown by using a single crucible

    Science.gov (United States)

    Kachare, A. H.; Uno, F. M.; Miyahira, T.; Lane, R. L.

    1980-01-01

    Results on the performance of solar cells fabricated on wafers from multiple silicon ingots of large diameter, grown by using a single crucible and a sequential melt replenishment Czochralski (CZO) technique are presented. Samples were analyzed for resistivity, dislocation density and impurity content. Solar cells were fabricated from the seed, center and tang end of each ingot to evaluate the growth reproducibility and material quality. The cell efficiency within a given wafer varies by no more than plus or minus 5% of the average value. A small but consistent decrease in the cell efficiency is observed from the first to the fourth ingot grown from a single crucible. This decrease may be related to an increase in impurity content or dislocation density or a combination of both. The efficiency of the cells fabricated from the tang end of the fourth ingot is about 10% lower than that of the control cell. An impurity effects model is employed to correlate this decrease in efficiency with the impurity build-up in the residual melt.

  17. Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

    Science.gov (United States)

    Fujiwara, Akira; Nishiguchi, Katsuhiko; Ono, Yukinori

    2008-01-01

    Nanoampere single-electron pumping is presented at 20K using a single-electron ratchet comprising silicon nanowire metal-oxide-semiconductor field-effect transistors. The ratchet features an asymmetric potential with a pocket that captures single electrons from the source and ejects them to the drain. Directional single-electron transfer is achieved by applying one ac signal with the frequency up to 2.3GHz. We find anomalous shapes of current steps which can be ascribed to nonadiabatic electron capture.

  18. Injection molded nanofluidic chips: Fabrication method and functional tests using single-molecule DNA experiments

    DEFF Research Database (Denmark)

    Utko, Pawel; Persson, Karl Fredrik; Kristensen, Anders

    2011-01-01

    We demonstrate that fabrication of nanofluidic systems can be greatly simplified by injection molding of polymers. We functionally test our devices by single-molecule DNA experiments in nanochannels.......We demonstrate that fabrication of nanofluidic systems can be greatly simplified by injection molding of polymers. We functionally test our devices by single-molecule DNA experiments in nanochannels....

  19. Single nanowire electrode electrochemistry of silicon anode by in situ atomic force microscopy: solid electrolyte interphase growth and mechanical properties.

    Science.gov (United States)

    Liu, Xing-Rui; Deng, Xin; Liu, Ran-Ran; Yan, Hui-Juan; Guo, Yu-Guo; Wang, Dong; Wan, Li-Jun

    2014-11-26

    Silicon nanowires (SiNWs) have attracted great attention as promising anode materials for lithium ion batteries (LIBs) on account of their high capacity and improved cyclability compared with bulk silicon. The interface behavior, especially the solid electrolyte interphase (SEI), plays a significant role in the performance and stability of the electrodes. We report herein an in situ single nanowire atomic force microscopy (AFM) method to investigate the interface electrochemistry of silicon nanowire (SiNW) electrode. The morphology and Young's modulus of the individual SiNW anode surface during the SEI growth were quantitatively tracked. Three distinct stages of the SEI formation on the SiNW anode were observed. On the basis of the potential-dependent morphology and Young's modulus evolution of SEI, a mixture-packing structural model was proposed for the SEI film on SiNW anode.

  20. Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

    International Nuclear Information System (INIS)

    Jung, Y. J.; Kim, W. K.; Jung, J. H.

    2014-01-01

    The highest-concentration impurity in a single-crystal silicon ingot is oxygen, which infiltrates the ingot during growth stage. This oxygen adversely affects the wafer is quality. This study was aimed at finding an optimal design for the Czochralski (Cz) process to enable high-quality and low cost (by reducing power consumption) wafer production by controlling the oxygen concentration in the silicon ingots. In the Cz process, the characteristics of silicon ingots during crystallization are greatly influenced by the design and the configuration of the hot zone, and by crystallization rate. In order to identify process conditions for obtaining an optimal oxygen concentration of 11 - 13 ppma (required for industrial-grade ingots), designed two shield shapes for the hot zone. Furthermore, oxygen concentrations corresponding to these two shapes were compared by evaluating each shape at five different production speeds. In addition, simulations were performed to identify the optimal shield design for industrial applications.

  1. Process design and simulation for optimizing the oxygen concentration in Czochralski-grown single-crystal silicon

    Energy Technology Data Exchange (ETDEWEB)

    Jung, Y. J.; Kim, W. K.; Jung, J. H. [Yeungnam University, Gyeongsan (Korea, Republic of)

    2014-08-15

    The highest-concentration impurity in a single-crystal silicon ingot is oxygen, which infiltrates the ingot during growth stage. This oxygen adversely affects the wafer is quality. This study was aimed at finding an optimal design for the Czochralski (Cz) process to enable high-quality and low cost (by reducing power consumption) wafer production by controlling the oxygen concentration in the silicon ingots. In the Cz process, the characteristics of silicon ingots during crystallization are greatly influenced by the design and the configuration of the hot zone, and by crystallization rate. In order to identify process conditions for obtaining an optimal oxygen concentration of 11 - 13 ppma (required for industrial-grade ingots), designed two shield shapes for the hot zone. Furthermore, oxygen concentrations corresponding to these two shapes were compared by evaluating each shape at five different production speeds. In addition, simulations were performed to identify the optimal shield design for industrial applications.

  2. Turn-off failure in multi-finger SOI-LIGBT used for single chip inverter ICs

    Science.gov (United States)

    Zhang, Long; Zhu, Jing; Zhao, Minna; Huang, Xuequan; Chen, Jiajun; Sun, Weifeng; Ding, Desheng

    2017-11-01

    In this paper, the clamped inductive turn-off failure of the Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor (SOI-LIGBT) with multiple fingers under high-voltage and high-current conditions is investigated. First, the measured turn-off waveforms combining with the on-state I-V characteristics of the failed device are discussed to distinguish the probable cause of the failure. Then, two-dimensional (2-D) electrothermal simulations are performed to reproduce the failure by using Sentaurus TCAD. The failure is originated from an inhomogeneous depletion behavior among the paralleled fingers during the turn-off, which gives rise to the non-uniform current-sharing and the subsequent current crowding in single finger. As a result, the latch-up of the device takes place. The simulation indicates that the current crowding is formed mainly through an internal path in the silicon. In order to verify the failure mechanism, an improved device with deep-oxide trenches arranged between the adjacent fingers is fabricated. The measured results demonstrate that no failure occurs when the improved device turns off under high-voltage and high-current conditions.

  3. Application of ITO/Al reflectors for increasing the efficiency of single-crystal silicon solar cells

    International Nuclear Information System (INIS)

    Kopach, V. R.; Kirichenko, M. V.; Khrypunov, G. S.; Zaitsev, R. V.

    2010-01-01

    It is shown that an increase in the efficiency and manufacturability of single-junction single-crystal silicon photoelectric converters of solar energy requires the use of a back-surface reflector based on conductive transparent indium-tin oxide (ITO) 0.25-2 μm thick. To increase the efficiency and reduce the sensitivity to the angle of light incidence on the photoreceiving surface of multijunction photoelectric converters with vertical diode cells based on single-crystal silicon, ITO/Al reflectors with an ITO layer >1 μm thick along vertical boundaries of diode cells should be fabricated. The experimental study of multijunction photoelectric converters with ITO/Al reflectors at diode cell boundaries shows the necessity of modernizing the used technology of ITO layers to achieve their theoretically calculated thickness.

  4. First principles investigations of single dopants in diamond and silicon carbide

    Science.gov (United States)

    Hu, Wenhao

    In the most recent two decades, the development of impurity controls with ultra-high precision in semiconductors motivates people to put more and more attentions on the solotronic devices, whose properties depend on one or a few dopants. One of the most promising applications of solotronic device is the qubit in quantum computing. In the procedure of exploring qubit candidates, the most straightforward challenges we need face include that the qubit must be highly isolated and can be initialized/manipulated efficiently with high fidelities. It has been proved that qubits based on single defects have excellent performances as quits. For instance, the NV center in diamond forms a ground spin triplet which can be manipulated at room temperature with electromagnetic fields. This work focuses on searching for new single defects as qubit candidates with density functional theory. Lanthanides element possesses excellent optical characteristics and extremely long nuclear coherence time. Therefore, combining it into the diamond platform can be possible design for integrated quantum information processing devices in the future. To investigate the stability of lanthanides dopants in the diamond matrix, the formation energies of charge states of complexes are calculated. The broadening of Eu(III) peak in the photoluminescence spectrum can be verified according to the existence of more than stable configuration and steady 4f electron occupation. In the case of transition-metal dopant in the silicon carbide, it is found that both silicon and carbon substituted nickels in 3C-SiC shows a magnetic-antimagnetic transition under applied strains. The virtual hopping rate of electrons strongly depends on the distance between the spin pair residing in the nickel and dangling bonds. Therefore, the Heisenberg exchange coupling between them can be adjusted subtly by controlling the external strain. According to the spin Hamiltonian of the defect, the spin state can be manipulated

  5. Mikrofluidik-Chips

    NARCIS (Netherlands)

    Verpoorte, E.; Lichtenberg, J.

    2000-01-01

    Microfluidic chips are becoming the new paradigm for chemical processing and analysis in the laboratory. Hair-fine channels made in planar substrates using silicon processing technologies replace beakers and tubing for automated liquid transport and handling on a sub-μ L scale. Reduced conduit

  6. Improved Laser Manipulation for On-chip Fabricated Microstructures Based on Solution Replacement and Its Application in Single Cell Analysis

    Directory of Open Access Journals (Sweden)

    Tao Yue

    2014-02-01

    Full Text Available In this paper, we present the fabrication and assembly of microstructures inside a microfluidic device based on a photocrosslinkable resin and optical tweezers. We also report a method of solution replacement inside the microfluidic channel in order to improve the manipulation performance and apply the assembled microstructures for single cell cultivation. By the illumination of patterned ultraviolet (UV through a microscope, microstructures of arbitrary shape were fabricated by the photocrosslinkable resin inside a microfluidic channel. Based on the microfluidic channel with both glass and polydimethylsiloxane (PDMS surfaces, immovable and movable microstructures were fabricated and manipulated. The microstructures were fabricated at the desired places and manipulated by the optical tweezers. A rotational microstructure including a microgear and a rotation axis was assembled and rotated in demonstrating this technique. The improved laser manipulation of microstructures was achieved based on the on-chip solution replacement method. The manipulation speed of the microstructures increased when the viscosity of the solvent decreased. The movement efficiency of the fabricated microstructures inside the lower viscosity solvent was evaluated and compared with those microstructures inside the former high viscosity solvent. A novel cell cage was fabricated and the cultivation of a single yeast cell (w303 was demonstrated in the cell cage, inside the microfluidic device.

  7. Hydrodynamic lift for single cell manipulation in a femtosecond laser fabricated optofluidic chip

    Directory of Open Access Journals (Sweden)

    Bragheri Francesca

    2017-08-01

    Full Text Available Single cell sorting based either on fluorescence or on mechanical properties has been exploited in the last years in microfluidic devices. Hydrodynamic focusing allows increasing the efficiency of theses devices by improving the matching between the region of optical analysis and that of cell flow. Here we present a very simple solution fabricated by femtosecond laser micromachining that exploits flow laminarity in microfluidic channels to easily lift the sample flowing position to the channel portion illuminated by the optical waveguides used for single cell trapping and analysis.

  8. Single-crystal-silicon-based microinstrument to study friction and wear at MEMS sidewall interfaces

    International Nuclear Information System (INIS)

    Ansari, N; Ashurst, W R

    2012-01-01

    Since the advent of microelectromechanical systems (MEMS) technology, friction and wear are considered as key factors that determine the lifetime and reliability of MEMS devices that contain contacting interfaces. However, to date, our knowledge of the mechanisms that govern friction and wear in MEMS is insufficient. Therefore, systematically investigating friction and wear at MEMS scale is critical for the commercial success of many potential MEMS devices. Specifically, since many emerging MEMS devices contain more sidewall interfaces, which are topographically and chemically different from in-plane interfaces, studying the friction and wear characteristics of MEMS sidewall surfaces is important. The microinstruments that have been used to date to investigate the friction and wear characteristics of MEMS sidewall surfaces possess several limitations induced either by their design or the structural film used to fabricate them. Therefore, in this paper, we report on a single-crystal-silicon-based microinstrument to study the frictional and wear behavior of MEMS sidewalls, which not only addresses some of the limitations of other microinstruments but is also easy to fabricate. The design, modeling and fabrication of the microinstrument are described in this paper. Additionally, the coefficients of static and dynamic friction of octadecyltrichlorosilane-coated sidewall surfaces as well as sidewall surfaces with only native oxide on them are also reported in this paper. (paper)

  9. A silicon-based single-electron interferometer coupled to a fermionic sea

    Science.gov (United States)

    Chatterjee, Anasua; Shevchenko, Sergey N.; Barraud, Sylvain; Otxoa, Rubén M.; Nori, Franco; Morton, John J. L.; Gonzalez-Zalba, M. Fernando

    2018-01-01

    We study Landau-Zener-Stückelberg-Majorana (LZSM) interferometry under the influence of projective readout using a charge qubit tunnel-coupled to a fermionic sea. This allows us to characterize the coherent charge-qubit dynamics in the strong-driving regime. The device is realized within a silicon complementary metal-oxide-semiconductor (CMOS) transistor. We first read out the charge state of the system in a continuous nondemolition manner by measuring the dispersive response of a high-frequency electrical resonator coupled to the quantum system via the gate. By performing multiple fast passages around the qubit avoided crossing, we observe a multipassage LZSM interferometry pattern. At larger driving amplitudes, a projective measurement to an even-parity charge state is realized, showing a strong enhancement of the dispersive readout signal. At even larger driving amplitudes, two projective measurements are realized within the coherent evolution resulting in the disappearance of the interference pattern. Our results demonstrate a way to increase the state readout signal of coherent quantum systems and replicate single-electron analogs of optical interferometry within a CMOS transistor.

  10. Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices

    Science.gov (United States)

    Aurang, Pantea; Turan, Rasit; Emrah Unalan, Husnu

    2017-10-01

    Reducing silicon (Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire (NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 ± 0.2 μm upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% ± 5% in photovoltaic conversion efficiency.

  11. Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices.

    Science.gov (United States)

    Aurang, Pantea; Turan, Rasit; Unalan, Husnu Emrah

    2017-10-06

    Reducing silicon (Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire (NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 ± 0.2 μm upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% ± 5% in photovoltaic conversion efficiency.

  12. Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com; Troudi, M.; Sghaier, N.; Kalboussi, A. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Aimez, V. [Université de Sherbrooke, Laboratoire Nanotechnologies et Nanosystémes (UMI-LN2 3463), Université de Sherbrooke—CNRS—INSA de Lyon-ECL-UJF-CPE Lyon, Institut Interdisciplinaire d’Innovation Technologique (Canada); Drouin, D. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Souifi, A. [Institut des Nanotechnologies de Lyon—site INSA de Lyon, UMR CNRS 5270 (France)

    2016-09-15

    In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.

  13. Silicon spectral response extension through single wall carbon nanotubes in hybrid solar cells

    KAUST Repository

    Del Gobbo, Silvano

    2013-01-01

    Photovoltaic devices based on single wall carbon nanotubes (SWCNTs) and n-silicon multiple heterojunctions have been fabricated by a SWCNT film transferring process. We report on the ability of the carbon nanotubes to extend the Si spectral range towards the near ultraviolet (UV) and the near infrared regions. Semiconducting and about metallic SWCNT networks have been studied as a function of the film sheet resistance, Rsh. Optical absorbance and Raman spectroscopy have been used to assign nanotube chirality and electronic character. This gave us hints of evidence of the participation of the metal nanotubes in the photocurrent generation. Moreover, we provide evidence that the external quantum efficiency spectral range can be modulated as a function of the SWCNT network sheet resistance in a hybrid SWCNT/Si solar cell. This result will be very useful to further design/optimize devices with improved performance in spectral regions generally not covered by conventional Si p-n devices. © 2013 The Royal Society of Chemistry.

  14. On-chip beamsplitter operation on single photons from quasi-resonantly excited quantum dots embedded in GaAs rib waveguides

    Energy Technology Data Exchange (ETDEWEB)

    Rengstl, U.; Schwartz, M.; Herzog, T.; Hargart, F.; Paul, M.; Portalupi, S. L.; Jetter, M.; Michler, P., E-mail: p.michler@ihfg.uni-stuttgart.de [Institut für Halbleiteroptik und Funktionelle Grenzflächen and Research Center SCoPE, University of Stuttgart, Allmandring 3, 70569 Stuttgart (Germany)

    2015-07-13

    We present an on-chip beamsplitter operating on a single-photon level by means of a quasi-resonantly driven InGaAs/GaAs quantum dot. The single photons are guided by rib waveguides and split into two arms by an evanescent field coupler. Although the waveguides themselves support the fundamental TE and TM modes, the measured degree of polarization (∼90%) reveals the main excitation and propagation of the TE mode. We observe the preserved single-photon nature of a quasi-resonantly excited quantum dot by performing a cross-correlation measurement on the two output arms of the beamsplitter. Additionally, the same quantum dot is investigated under resonant excitation, where the same splitting ratio is observed. An autocorrelation measurement with an off-chip beamsplitter on a single output arm reveal the single-photon nature after evanescent coupling inside the on-chip splitter. Due to their robustness, adjustable splitting ratio, and their easy implementation, rib waveguide beamsplitters with embedded quantum dots provide a promising step towards fully integrated quantum circuits.

  15. Fully Streched Single DNA Molecules in a Nanofluidic Chip Show Large-Scale Structural Variation

    DEFF Research Database (Denmark)

    Pedersen, Jonas Nyvold; Marie, Rodolphe; Bauer, D. L.

    2013-01-01

    When stretching and imaging DNA molecules in nanofluidic devices, it is important to know the relation between the physical length as measured in the lab and the distance along the contour of the DNA. Here a single DNA molecule longer than 1 Mbp is loaded into a nanofluidic device consisting of two...

  16. Prototype of the front-end circuit for the GOSSIP (Gas On Slimmed Silicon Pixel) chip in the 0.13 μm CMOS technology

    CERN Document Server

    Gromov, V; van der Graaf, H

    2007-01-01

    The new GOSSIP detector, capable to detect single electrons in gas, has certain advantages with respect silicon (pixel) detectors. It does not require a Si sensor; it has a very low detector parasitic capacitance and a zero bias current at the pixel input. These are attractive features to design a compact, low-noise and low-power integrated input circuit. A prototype of the integrated circuit has been developed in 0.13 μm CMOS technology. It includes a few channels equipped with preamplifier, discriminator and the digital circuit to study the feasibility of the TDC-perpixel concept. The design demonstrates very low input referred noise (60e- RMS) in combination with a fast peaking time (40 ns) and an analog power dissipation as low as 2 μW per channel. Switching activity on the clock bus (up to 100 MHz) in the close vicinity of the pixel input pads does not cause noticeable extra noise.

  17. Numerical and experimental study of a solid pellet feed continuous Czochralski growth process for silicon single crystals

    Science.gov (United States)

    Anselmo, A.; Prasad, V.; Koziol, J.; Gupta, K. P.

    1993-07-01

    A polysilicon pellets (≅1 mm diameter) feed continuous Czochralski (CCZ) growth process for silicon single crystals is proposed and investigated. Experiments in an industrial puller (14-18 inch diameter crucible) successfully demonstrate the feasibility of this process. The advantages of the proposed scheme are: a steady state growth process, a low aspect ratio melt, uniformity of heat addition and a growth apparatus with single crucible and no baffle(s). The addition of dopant with the solid charge will allow a better control of oxygen concentration leading to crystals of uniform properties and better quality. This paper presents theoretical results on melting of fully and partially immersed silicon spheres and numerical solutions on temperature and flow fields in low aspect ration melts with and without the addition of solid pellets. The theoretical and experimental results obtained thus far show a great promise for the proposed scheme.

  18. An air-breathing micro direct methanol fuel cell stack employing a single shared anode using silicon microfabrication technologies

    Science.gov (United States)

    Wang, Xiaohong; Zhou, Yan'an; Zhang, Qian; Zhu, Yiming; Liu, Litian

    2009-09-01

    This paper presents a silicon-based air-breathing micro direct methanol fuel cell (μDMFC) stack with a shared anode plate and two air-breathing cathode plates. Three kinds of anode plates featured by different methanol transport methods are designed and simulated. Microfabrication technologies, including double-side lithography and bulk-micromachining, are used to fabricate both anode and cathode silicon plates on the same wafer simultaneously. Three μDMFC stacks with different kinds of anodes are assembled, and characterized with a single cell together. Simulation and experimental results show that the μDMFC stack with fuel transport in a shared model has the best performance, and this stack achieves a power of 2.52 mW which is almost double that of a single cell of 1.28 mW.

  19. Single-chip MEMS 5 × 5 and 20 × 20 double-pole single-throw switch arrays for automating telecommunication networks

    International Nuclear Information System (INIS)

    Braun, S; Oberhammer, J; Stemme, G

    2008-01-01

    This paper reports on microelectromechanical (MEMS) switch arrays with 5 × 5 and 20 × 20 double-pole single-throw (DPST) switches embedded and packaged on a single chip, which are intended for automating main distribution frames in copper-wire telecommunication networks. Whenever a customer requests a change in his telecommunication services, the copper-wire network has to be reconfigured which is currently done manually by a costly physical re-routing of the connections in the main distribution frames. To reduce the costs, new methods for automating the network reconfiguration are sought after by the network providers. The presented devices comprise 5 × 5 or 20 × 20 double switches, which allow us to interconnect any of the 5 or 20 input lines to any of the 5 or 20 output lines. The switches are based on an electrostatic S-shaped film actuator with the switch contact on a flexible membrane, moving between a top and a bottom electrode. The devices are fabricated in two parts which are designed to be assembled using selective adhesive wafer bonding, resulting in a wafer-scale package of the switch array. The on-chip routing network consists of thick metal lines for low resistance and is embedded in bencocyclobutene (BCB) polymer layers. The packaged 5 × 5 switch arrays have a size of 6.7 × 6.4 mm 2 and the 20 × 20 arrays are 14 × 10 mm 2 large. The switch actuation voltages for closing/opening the switches averaged over an array were measured to be 21.2 V/15.3 V for the 5 × 5 array and 93.2 V/37.3 V for the 20 × 20 array, respectively. The total signal line resistances vary depending on the switch position within the array between 0.13 Ω and 0.56 Ω for the 5 × 5 array and between 0.08 Ω to 2.33 Ω for the 20 × 20 array, respectively. The average resistance of the switch contacts was determined to be 0.22 Ω with a standard deviation of 0.05 Ω

  20. ALICE chip processor

    CERN Multimedia

    Maximilien Brice

    2003-01-01

    This tiny chip provides data processing for the time projection chamber on ALICE. Known as the ALICE TPC Read Out (ALTRO), this device was designed to minimize the size and power consumption of the TPC front end electronics. This single chip contains 16 low-power analogue-to-digital converters with six million transistors of digital processing and 8 kbits of data storage.

  1. Locating Damage Using Integrated Global-Local Approach with Wireless Sensing System and Single-Chip Impedance Measurement Device

    Directory of Open Access Journals (Sweden)

    Tzu-Hsuan Lin

    2014-01-01

    Full Text Available This study developed an integrated global-local approach for locating damage on building structures. A damage detection approach with a novel embedded frequency response function damage index (NEFDI was proposed and embedded in the Imote2.NET-based wireless structural health monitoring (SHM system to locate global damage. Local damage is then identified using an electromechanical impedance- (EMI- based damage detection method. The electromechanical impedance was measured using a single-chip impedance measurement device which has the advantages of small size, low cost, and portability. The feasibility of the proposed damage detection scheme was studied with reference to a numerical example of a six-storey shear plane frame structure and a small-scale experimental steel frame. Numerical and experimental analysis using the integrated global-local SHM approach reveals that, after NEFDI indicates the approximate location of a damaged area, the EMI-based damage detection approach can then identify the detailed damage location in the structure of the building.

  2. Locating damage using integrated global-local approach with wireless sensing system and single-chip impedance measurement device.

    Science.gov (United States)

    Lin, Tzu-Hsuan; Lu, Yung-Chi; Hung, Shih-Lin

    2014-01-01

    This study developed an integrated global-local approach for locating damage on building structures. A damage detection approach with a novel embedded frequency response function damage index (NEFDI) was proposed and embedded in the Imote2.NET-based wireless structural health monitoring (SHM) system to locate global damage. Local damage is then identified using an electromechanical impedance- (EMI-) based damage detection method. The electromechanical impedance was measured using a single-chip impedance measurement device which has the advantages of small size, low cost, and portability. The feasibility of the proposed damage detection scheme was studied with reference to a numerical example of a six-storey shear plane frame structure and a small-scale experimental steel frame. Numerical and experimental analysis using the integrated global-local SHM approach reveals that, after NEFDI indicates the approximate location of a damaged area, the EMI-based damage detection approach can then identify the detailed damage location in the structure of the building.

  3. Using single cell cultivation system for on-chip monitoring of the interdivision timer in Chlamydomonas reinhardtii cell cycle

    Directory of Open Access Journals (Sweden)

    Soloviev Mikhail

    2010-09-01

    Full Text Available Abstract Regulation of cell cycle progression in changing environments is vital for cell survival and maintenance, and different regulation mechanisms based on cell size and cell cycle time have been proposed. To determine the mechanism of cell cycle regulation in the unicellular green algae Chlamydomonas reinhardtii, we developed an on-chip single-cell cultivation system that allows for the strict control of the extracellular environment. We divided the Chlamydomonas cell cycle into interdivision and division phases on the basis of changes in cell size and found that, regardless of the amount of photosynthetically active radiation (PAR and the extent of illumination, the length of the interdivision phase was inversely proportional to the rate of increase of cell volume. Their product remains constant indicating the existence of an 'interdivision timer'. The length of the division phase, in contrast, remained nearly constant. Cells cultivated under light-dark-light conditions did not divide unless they had grown to twice their initial volume during the first light period. This indicates the existence of a 'commitment sizer'. The ratio of the cell volume at the beginning of the division phase to the initial cell volume determined the number of daughter cells, indicating the existence of a 'mitotic sizer'.

  4. Imputation Accuracy from Low to Moderate Density Single Nucleotide Polymorphism Chips in a Thai Multibreed Dairy Cattle Population

    Directory of Open Access Journals (Sweden)

    Danai Jattawa

    2016-04-01

    Full Text Available The objective of this study was to investigate the accuracy of imputation from low density (LDC to moderate density SNP chips (MDC in a Thai Holstein-Other multibreed dairy cattle population. Dairy cattle with complete pedigree information (n = 1,244 from 145 dairy farms were genotyped with GeneSeek GGP20K (n = 570, GGP26K (n = 540 and GGP80K (n = 134 chips. After checking for single nucleotide polymorphism (SNP quality, 17,779 SNP markers in common between the GGP20K, GGP26K, and GGP80K were used to represent MDC. Animals were divided into two groups, a reference group (n = 912 and a test group (n = 332. The SNP markers chosen for the test group were those located in positions corresponding to GeneSeek GGP9K (n = 7,652. The LDC to MDC genotype imputation was carried out using three different software packages, namely Beagle 3.3 (population-based algorithm, FImpute 2.2 (combined family- and population-based algorithms and Findhap 4 (combined family- and population-based algorithms. Imputation accuracies within and across chromosomes were calculated as ratios of correctly imputed SNP markers to overall imputed SNP markers. Imputation accuracy for the three software packages ranged from 76.79% to 93.94%. FImpute had higher imputation accuracy (93.94% than Findhap (84.64% and Beagle (76.79%. Imputation accuracies were similar and consistent across chromosomes for FImpute, but not for Findhap and Beagle. Most chromosomes that showed either high (73% or low (80% imputation accuracies were the same chromosomes that had above and below average linkage disequilibrium (LD; defined here as the correlation between pairs of adjacent SNP within chromosomes less than or equal to 1 Mb apart. Results indicated that FImpute was more suitable than Findhap and Beagle for genotype imputation in this Thai multibreed population. Perhaps additional increments in imputation accuracy could be achieved by increasing the completeness of pedigree information.

  5. Single-silicon CCD-CMOS platform for multi-spectral detection from terahertz to x-rays.

    Science.gov (United States)

    Shalaby, Mostafa; Vicario, Carlo; Hauri, Christoph P

    2017-11-15

    Charge-coupled devices (CCDs) are a well-established imaging technology in the visible and x-ray frequency ranges. However, the small quantum photon energies of terahertz radiation have hindered the use of this mature semiconductor technological platform in this frequency range, leaving terahertz imaging totally dependent on low-resolution bolometer technologies. Recently, it has been shown that silicon CCDs can detect terahertz photons at a high field, but the detection sensitivity is limited. Here we show that silicon, complementary metal-oxide-semiconductor (CMOS) technology offers enhanced detection sensitivity of almost two orders of magnitude, compared to CCDs. Our findings allow us to extend the low-frequency terahertz cutoff to less than 2 THz, nearly closing the technological gap with electronic imagers operating up to 1 THz. Furthermore, with the silicon CCD/CMOS technology being sensitive to mid-infrared (mid-IR) and the x-ray ranges, we introduce silicon as a single detector platform from 1 EHz to 2 THz. This overcomes the present challenge in spatially overlapping a terahertz/mid-IR pump and x-ray probe radiation at facilities such as free electron lasers, synchrotron, and laser-based x-ray sources.

  6. Adhesion of single- and multi-walled carbon nanotubes to silicon substrate: atomistic simulations and continuum analysis

    Science.gov (United States)

    Yuan, Xuebo; Wang, Youshan

    2017-10-01

    The radial deformation of carbon nanotubes (CNTs) adhering to a substrate may prominently affect their mechanical and physical properties. In this study, both classical atomistic simulations and continuum analysis are carried out, to investigate the lateral adhesion of single-walled CNTs (SWCNTs) and multi-walled CNTs (MWCNTs) to a silicon substrate. A linear elastic model for analyzing the adhesion of 2D shells to a rigid semi-infinite substrate is constructed in the framework of continuum mechanics. Good agreement is achieved between the cross-section profiles of adhesive CNTs obtained by the continuum model and by the atomistic simulation approach. It is found that the adhesion of a CNT to the silicon substrate is significantly influenced by its initial diameter and the number of walls. CNTs with radius larger than a certain critical radius are deformed radially on the silicon substrate with flat contact regions. With increasing number of walls, the extent of radial deformation of a MWCNT on the substrate decreases dramatically, and the flat contact area reduces—and eventually vanishes—due to increasing equivalent bending stiffness. It is analytically predicted that large-diameter MWCNTs with a large number of walls are likely to ‘stand’ on the silicon substrate. The present work can be useful for understanding the radial deformation of CNTs adhering to a solid planar substrate.

  7. A single-chip 32-channel analog beamformer with 4-ns delay resolution and 768-ns maximum delay range for ultrasound medical imaging with a linear array transducer.

    Science.gov (United States)

    Um, Ji-Yong; Kim, Yoon-Jee; Cho, Seong-Eun; Chae, Min-Kyun; Kim, Byungsub; Sim, Jae-Yoon; Park, Hong-June

    2015-02-01

    A single-chip 32-channel analog beamformer is proposed. It achieves a delay resolution of 4 ns and a maximum delay range of 768 ns. It has a focal-point based architecture, which consists of 7 sub-analog beamformers (sub-ABF). Each sub-ABF performs a RX focusing operation for a single focal point. Seven sub-ABFs perform a time-interleaving operation to achieve the maximum delay range of 768 ns. Phase interpolators are used in sub-ABFs to generate sampling clocks with the delay resolution of 4 ns from a low frequency system clock of 5 MHz. Each sub-ABF samples 32 echo signals at different times into sampling capacitors, which work as analog memory cells. The sampled 32 echo signals of each sub-ABF are originated from one target focal point at one instance. They are summed at one instance in a sub-ABF to perform the RX focusing for the target focal point. The proposed ABF chip has been fabricated in a 0.13- μ m CMOS process with an active area of 16 mm (2). The total power consumption is 287 mW. In measurement, the digital echo signals from a commercial ultrasound medical imaging machine were applied to the fabricated chip through commercial DAC chips. Due to the speed limitation of the DAC chips, the delay resolution was relaxed to 10 ns for the real-time measurement. A linear array transducer with no steering operation is used in this work.

  8. A 3 W High-Voltage Single-Chip Green Light-Emitting Diode with Multiple-Cells Network

    Directory of Open Access Journals (Sweden)

    W. Wang

    2015-01-01

    Full Text Available A parallel and series network structure was introduced into the design of the high-voltage single-chip (HV-SC light-emitting diode to inhibit the effect of current crowding and to improve the yield. Using such a design, a 6.6×5 mm2 large area LED chip of 24 parallel stages was demonstrated with 3 W light output power (LOP at the current of 500 mA. The forward voltage was measured to be 83 V with the same current injection, corresponding to 3.5 V for a single stage. The LED chip’s average thermal resistance was identified to be 0.28 K/W by using infrared thermography analysis.

  9. Time-correlated single-photon counting study of multiple photoluminescence lifetime components of silicon nanoclusters

    Energy Technology Data Exchange (ETDEWEB)

    Diamare, D., E-mail: d.diamare@ee.ucl.ac.uk [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE (United Kingdom); Wojdak, M. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE (United Kingdom); Lettieri, S. [Institute for Superconductors and Innovative Materials, National Council of Research (CNR-SPIN), Via Cintia 80126, Naples (Italy); Department of Physical Sciences, University of Naples “Federico II”, Via Cintia 80126, Naples (Italy); Kenyon, A.J. [Department of Electronic and Electrical Engineering, University College London, Torrington Place, London, WC1E 7JE (United Kingdom)

    2013-04-15

    We report time-resolved photoluminescence measurements of thin films of silica containing silicon nanoclusters (Si NCs), produced by PECVD and annealed at temperatures between 700 °C and 1150 °C. While the near infrared emission of Si NCs has long been studied, visible light emission has only recently attracted interest due to its very short decay times and its recently-reported redshift with decreasing NCs size. We analyse the PL decay dynamics in the range 450–700 nm with picosecond time resolution using Time Correlated Single Photon Counting. In the resultant multi-exponential decays two dominant components can clearly be distinguished: a very short component, in the range of hundreds of picoseconds, and a nanosecond component. In this wavelength range we do not detect the microsecond component generally associated with excitonic recombination. We associate the nanosecond component to defect relaxation: it decreases in intensity in the sample annealed at higher temperature, suggesting that the contribution from defects decreases with increasing temperature. The origin of the very fast PL component (ps time region) is also discussed. We show that it is consistent with the Auger recombination times of multiple excitons. Further work needs to be done in order to assess the contribution of the Auger-controlled recombinations to the defect-assisted mechanism of photoluminescence. -- Highlights: ► We report time-resolved PL measurements of Si-Ncs embedded in SiO{sub 2} matrix. ► Net decrease of PL with increasing the annealing temperature has been observed. ► Lifetime distribution analysis revealed a multiexponential decay with ns and ps components. ► Ps components are consistent with the lifetime range of the Auger recombination times. ► No evidence for a fast direct transition at the Brillouin zone centre.

  10. Friction and Wear of Metals With a Single-Crystal Abrasive Grit of Silicon Carbide - Effect of Shear Strength of Metal

    National Research Council Canada - National Science Library

    Miyoshi, Kazuhisa

    1978-01-01

    An investigation was conducted to examine the removal and plastic deformation of metal as a function of the metal properties when the metal is in sliding contact with a single-crystal abrasive grit of silicon carbide...

  11. A Taxonomy of Reconfigurable Single-/Multiprocessor Systems-on-Chip

    Directory of Open Access Journals (Sweden)

    Diana Göhringer

    2009-01-01

    Full Text Available Runtime adaptivity of hardware in processor architectures is a novel trend, which is under investigation in a variety of research labs all over the world. The runtime exchange of modules, implemented on a reconfigurable hardware, affects the instruction flow (e.g., in reconfigurable instruction set processors or the data flow, which has a strong impact on the performance of an application. Furthermore, the choice of a certain processor architecture related to the class of target applications is a crucial point in application development. A simple example is the domain of high-performance computing applications found in meteorology or high-energy physics, where vector processors are the optimal choice. A classification scheme for computer systems was provided in 1966 by Flynn where single/multiple data and instruction streams were combined to four types of architectures. This classification is now used as a foundation for an extended classification scheme including runtime adaptivity as further degree of freedom for processor architecture design. The developed scheme is validated by a multiprocessor system implemented on reconfigurable hardware as well as by a classification of existing static and reconfigurable processor systems.

  12. Synchrotron Topographic and Diffractometer Studies of Buried Layered Structures Obtained by Implantation with Swift Heavy Ions in Silicon Single Crystals

    International Nuclear Information System (INIS)

    Wierzchowski, W.; Wieteska, K.; Zymierska, D.; Graeff, W.; Czosnyka, T.; Choinski, J.

    2006-01-01

    A distribution of crystallographic defects and deformation in silicon crystals subjected to deep implantation (20-50 μm) with ions of the energy of a few MeV/amu is studied. Three different buried layered structures (single layer, binary buried structure and triple buried structure) were obtained by implantation of silicon single crystals with 184 MeV argon ions, 29.7 MeV boron ions, and 140 MeV argon ions, each implantation at a fluency of 1x10 14 ions cm -2 . The implanted samples were examined by means of white beam X-ray section and projection topography, monochromatic beam topography and by recording local rocking curves with the beam restricted to 50 x 50 μm 2 . The experiment pointed to a very low level of implantation-induced strain (below 10 -5 ). The white beam Bragg case section experiment revealed a layer producing district black contrast located at a depth of the expected mean ion range. The presence of these buried layered structures in studied silicon crystals strongly affected the fringe pattern caused by curvature of the samples. In case of white beam projection and monochromatic beam topographs the implanted areas were revealed as darker regions with a very tiny grain like structure. One may interpret these results as the effect of considerable heating causing annihilation of point defects and formation of dislocation loops connected with point defect clusters. (author)

  13. Silicon plasmonics at midinfrared using silicon-insulator-silicon platform

    Science.gov (United States)

    Gamal, Rania; Shafaay, Sarah; Ismail, Yehea; Swillam, Mohamed A.

    2017-01-01

    We propose devices based on doped silicon. Doped silicon is designed to act as a plasmonic medium in the midinfrared (MIR) range. The surface plasmon frequency of the doped silicon can be tuned within the MIR range, which gives rise to useful properties in the material's dispersion. We propose various plasmonic configurations that can be utilized for silicon on-chip applications in MIR. These devices have superior performance over conventional silicon devices and provide unique functionalities such as 90-sharp degree bends, T- and X-junction splitters, and stubs. These devices are CMOS-compatible and can be easily integrated with other electronic devices. In addition, the potential for biological and environmental sensing using doped silicon nanowires is demonstrated.

  14. Internal mechanical stresses and the thermodynamic and adhesion parameters of the metal condensate-single-crystal silicon system

    Science.gov (United States)

    Coman, B. P.; Juzevych, V. N.

    2012-07-01

    The kinetics of generation of internal mechanical stresses σ( d) in chromium, copper, gold, and aluminum thin films on single-crystal silicon substrates at different deposition rates has been experimentally investigated using the cantilever method. A two-step character of the variations in internal tensile stresses has been revealed. The regularities of the formation of the maximum level of mechanical stresses in the condensates under investigation have been established. The energy and adhesion parameters of chromium, copper, gold, and aluminum nanolayers on silicon, germanium, and nickel substrates have been studied using the macroscopic methods of surface physics. The interfacial energy, interfacial tension, work of adhesion, interfacial charge, and a new energy characteristic of the interfacial layer, namely, the energy of adhesive bonds, which exceeds the interfacial energy, have been determined.

  15. On-chip highly sensitive saliva glucose sensing using multilayer films composed of single-walled carbon nanotubes, gold nanoparticles, and glucose oxidase

    Directory of Open Access Journals (Sweden)

    Wenjun Zhang

    2015-06-01

    Full Text Available It is very important for human health to rapidly and accurately detect glucose levels in biological environments, especially for diabetes mellitus. We proposed a simple, highly sensitive, accurate, convenient, low-cost, and disposable glucose biosensor on a single chip. A working (sensor electrode, a counter electrode, and a reference electrode are integrated on a single chip through micro-fabrication. The working electrode is functionalized through a layer-by-layer (LBL assembly of single-walled carbon nanotubes (SWNTs and multilayer films composed of chitosan (CS, gold nanoparticles (GNp, and glucose oxidase (GOx to obtain high sensitivity and accuracy. The glucose sensor has following features: (1 direct electron transfer between GOx and the electrode surface; (2 on-a-chip; (3 glucose detection down to 0.1 mg/dL (5.6 μM; (4 good sensing linearity over 0.017–0.81 mM; (5 high sensitivity (61.4 μA/mM-cm2 with a small reactive area (8 mm2; (6 fast response; (7 high reproducibility and repeatability; (8 reliable and accurate saliva glucose detection. Thus, this disposable biosensor will be an alternative for real time tracking of glucose levels from body fluids, e.g. saliva, in a noninvasive, pain-free, accurate, and continuous way. In addition to being used as a disposable glucose biosensor, it also provides a suitable platform for on-chip electrochemical sensing for other chemical agents and biomolecules.

  16. A Single-Chip Full-Duplex High Speed Transceiver for Multi-Site Stimulating and Recording Neural Implants.

    Science.gov (United States)

    Mirbozorgi, S Abdollah; Bahrami, Hadi; Sawan, Mohamad; Rusch, Leslie A; Gosselin, Benoit

    2016-06-01

    We present a novel, fully-integrated, low-power full-duplex transceiver (FDT) to support high-density and bidirectional neural interfacing applications (high-channel count stimulating and recording) with asymmetric data rates: higher rates are required for recording (uplink signals) than stimulation (downlink signals). The transmitter (TX) and receiver (RX) share a single antenna to reduce implant size and complexity. The TX uses impulse radio ultra-wide band (IR-UWB) based on an edge combining approach, and the RX uses a novel 2.4-GHz on-off keying (OOK) receiver. Proper isolation (>20 dB) between the TX and RX path is implemented 1) by shaping the transmitted pulses to fall within the unregulated UWB spectrum (3.1-7 GHz), and 2) by space-efficient filtering (avoiding a circulator or diplexer) of the downlink OOK spectrum in the RX low-noise amplifier. The UWB 3.1-7 GHz transmitter can use either OOK or binary phase shift keying (BPSK) modulation schemes. The proposed FDT provides dual band 500-Mbps TX uplink data rate and 100 Mbps RX downlink data rate, and it is fully integrated into standard TSMC 0.18- μm CMOS within a total size of 0.8 mm(2). The total measured power consumption is 10.4 mW in full duplex mode (5 mW at 100 Mbps for RX, and 5.4 mW at 500 Mbps or 10.8 pJ/bit for TX). Additionally, a 3-coil inductive link along with on-chip power management circuits allows to powering up the implantable transceiver wirelessly by delivering 25 mW extracted from a 13.56-MHz carrier signal, at a total efficiency of 41.6%.

  17. Single-Chip Fully Integrated Direct-Modulation CMOS RF Transmitters for Short-Range Wireless Applications

    Directory of Open Access Journals (Sweden)

    M. Jamal Deen

    2013-08-01

    Full Text Available Ultra-low power radio frequency (RF transceivers used in short-range application such as wireless sensor networks (WSNs require efficient, reliable and fully integrated transmitter architectures with minimal building blocks. This paper presents the design, implementation and performance evaluation of single-chip, fully integrated 2.4 GHz and 433 MHz RF transmitters using direct-modulation power voltage-controlled oscillators (PVCOs in addition to a 2.0 GHz phase-locked loop (PLL based transmitter. All three RF transmitters have been fabricated in a standard mixed-signal CMOS 0.18 µm technology. Measurement results of the 2.4 GHz transmitter show an improvement in drain efficiency from 27% to 36%. The 2.4 GHz and 433 MHz transmitters deliver an output power of 8 dBm with a phase noise of −122 dBc/Hz at 1 MHz offset, while drawing 15.4 mA of current and an output power of 6.5 dBm with a phase noise of −120 dBc/Hz at 1 MHz offset, while drawing 20.8 mA of current from 1.5 V power supplies, respectively. The PLL transmitter delivers an output power of 9 mW with a locking range of 128 MHz and consumes 26 mA from 1.8 V power supply. The experimental results demonstrate that the RF transmitters can be efficiently used in low power WSN applications.

  18. Towards Dependable Network-on-Chip Architectures

    NARCIS (Netherlands)

    Chen, C.

    2015-01-01

    The aggressive semiconductor technology scaling provides the means for doubling the amount of transistors on a single chip each and every 18 months. To efficiently utilize these vast chip resources, Multi-Processor Systems on Chip (MPSoCs) integrated with a Network-on-Chip (NoC) communication

  19. The effect of Cytochalasin D on F-Actin behavior of single-cell electroendocytosis using multi-chamber micro cell chip

    KAUST Repository

    Lin, Ran

    2012-03-01

    Electroendocytosis (EED) is a pulsed-electric-field (PEF) induced endocytosis, facilitating cells uptake molecules through nanometer-sized EED vesicles. We herein investigate the effect of a chemical inhibitor, Cytochalasin D (CD) on the actin-filaments (F-Actin) behavior of single-cell EED. The CD concentration (C CD) can control the depolymerization of F-actin. A multi-chamber micro cell chip was fabricated to study the EED under different conditions. Large-scale single-cell data demonstrated EED highly depends on both electric field and C CD. © 2012 IEEE.

  20. Strong spin-photon coupling in silicon.

    Science.gov (United States)

    Samkharadze, N; Zheng, G; Kalhor, N; Brousse, D; Sammak, A; Mendes, U C; Blais, A; Scappucci, G; Vandersypen, L M K

    2018-03-09

    Long coherence times of single spins in silicon quantum dots make these systems highly attractive for quantum computation, but how to scale up spin qubit systems remains an open question. As a first step to address this issue, we demonstrate the strong coupling of a single electron spin and a single microwave photon. The electron spin is trapped in a silicon double quantum dot, and the microwave photon is stored in an on-chip high-impedance superconducting resonator. The electric field component of the cavity photon couples directly to the charge dipole of the electron in the double dot, and indirectly to the electron spin, through a strong local magnetic field gradient from a nearby micromagnet. Our results provide a route to realizing large networks of quantum dot-based spin qubit registers. Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

  1. Growth and characterization of indium doped silicon single crystals at industrial scale

    Science.gov (United States)

    Haringer, Stephan; Giannattasio, Armando; Alt, Hans Christian; Scala, Roberto

    2016-03-01

    Indium is becoming one of the most important dopant species for silicon crystals used in photovoltaics. In this work we have investigated the behavior of indium in silicon crystals grown by the Czochralski pulling process. The experiments were performed by growing 200 mm crystals, which is a standard diameter for large volume production, thus the data reported here are of technological interest for the large scale production of indium doped p-type silicon. The indium segregation coefficient and the evaporation rate from the silicon melt have been calculated to be 5 × 10-4 ± 3% and 1.6 × 10-4 cm·s-1, respectively. In contrast to previous works the indium was introduced in liquid phase and the efficiency was compared with that deduced by other authors, using different methods. In addition, the percentage of electrically active indium at different dopant concentrations is calculated and compared with the carrier concentration at room temperature, measured by four-point bulk method.

  2. The Fabrication of Arrays of Single Ions in Silicon via Ion Implantation

    Science.gov (United States)

    2014-02-01

    coherence and electron nuclear double resonance of Bi donors in natural Si. Physical Review Letters, 105:067601, 2010. [225] T. Sekiguchi, M. Steger ...Exchange in silicon-based quantum computer architechture. Physical Review Letters, 88(2):027903, 2002. [246] A. Yang, M. Steger , T. Sekiguchi, M. L. W

  3. Single-particle properties of N = 12 to N = 20 silicon isotopes within the dispersive optical model

    Science.gov (United States)

    Bespalova, O. V.; Ermakova, T. A.; Klimochkina, A. A.; Spasskaya, T. I.

    2017-09-01

    Experimental neutron and proton single-particle energies in N = 12 to N = 20 silicon isotopes and data on neutron and proton scattering by nuclei of the isotope 28Si are analyzed on the basis of the dispersive optical model. Good agreement with available experimental data was attained. The occupation probabilities calculated for the single-particle states in question suggest a parallel-type filling of the 1 d and 2 s 1/2 neutron states in the isotopes 26,28,30,32,34Si. The single-particle spectra being considered are indicative of the closure of the Z = 14 proton subshell in the isotopes 30,32,34Si and the N = 20 neutron shell.

  4. Development, optimisation and characterisation of a radiation hard mixed-signal readout chip for LHCb

    Energy Technology Data Exchange (ETDEWEB)

    Loechner, S.

    2006-07-26

    The Beetle chip is a radiation hard, 128 channel pipelined readout chip for silicon strip detectors. The front-end consists of a charge-sensitive preamplifier followed by a CR-RC pulse shaper. The analogue pipeline memory is implemented as a switched capacitor array with a maximum latency of 4us. The 128 analogue channels are multiplexed and transmitted off chip in 900ns via four current output drivers. Beside the pipelined readout path, the Beetle provides a fast discrimination of the front-end pulse. Within this doctoral thesis parts of the radiation hard Beetle readout chip for the LHCb experiment have been developed. The overall chip performances like noise, power consumption, input charge rates have been optimised as well as the elimination of failures so that the Beetle fulfils the requirements of the experiment. Furthermore the characterisation of the chip was a major part of this thesis. Beside the detailed measurement of the chip performance, several irradiation tests and an Single Event Upset (SEU) test were performed. A long-time measurement with a silicon strip detector was also part of this work as well as the development and test of a first mass production test setup. The Beetle chip showed no functional failure and only slight degradation in the analogue performance under irradiation of up to 130Mrad total dose. The Beetle chip fulfils all requirements of the vertex detector (VELO), the trigger tracker (TT) and the inner tracker (IT) and is ready for the start of LHCb end of 2007. (orig.)

  5. Development, optimisation and characterisation of a radiation hard mixed-signal readout chip for LHCb

    International Nuclear Information System (INIS)

    Loechner, S.

    2006-01-01

    The Beetle chip is a radiation hard, 128 channel pipelined readout chip for silicon strip detectors. The front-end consists of a charge-sensitive preamplifier followed by a CR-RC pulse shaper. The analogue pipeline memory is implemented as a switched capacitor array with a maximum latency of 4us. The 128 analogue channels are multiplexed and transmitted off chip in 900ns via four current output drivers. Beside the pipelined readout path, the Beetle provides a fast discrimination of the front-end pulse. Within this doctoral thesis parts of the radiation hard Beetle readout chip for the LHCb experiment have been developed. The overall chip performances like noise, power consumption, input charge rates have been optimised as well as the elimination of failures so that the Beetle fulfils the requirements of the experiment. Furthermore the characterisation of the chip was a major part of this thesis. Beside the detailed measurement of the chip performance, several irradiation tests and an Single Event Upset (SEU) test were performed. A long-time measurement with a silicon strip detector was also part of this work as well as the development and test of a first mass production test setup. The Beetle chip showed no functional failure and only slight degradation in the analogue performance under irradiation of up to 130Mrad total dose. The Beetle chip fulfils all requirements of the vertex detector (VELO), the trigger tracker (TT) and the inner tracker (IT) and is ready for the start of LHCb end of 2007. (orig.)

  6. Initial steps toward the realization of large area arrays of single photon counting pixels based on polycrystalline silicon TFTs

    Science.gov (United States)

    Liang, Albert K.; Koniczek, Martin; Antonuk, Larry E.; El-Mohri, Youcef; Zhao, Qihua; Jiang, Hao; Street, Robert A.; Lu, Jeng Ping

    2014-03-01

    The thin-film semiconductor processing methods that enabled creation of inexpensive liquid crystal displays based on amorphous silicon transistors for cell phones and televisions, as well as desktop, laptop and mobile computers, also facilitated the development of devices that have become ubiquitous in medical x-ray imaging environments. These devices, called active matrix flat-panel imagers (AMFPIs), measure the integrated signal generated by incident X rays and offer detection areas as large as ~43×43 cm2. In recent years, there has been growing interest in medical x-ray imagers that record information from X ray photons on an individual basis. However, such photon counting devices have generally been based on crystalline silicon, a material not inherently suited to the cost-effective manufacture of monolithic devices of a size comparable to that of AMFPIs. Motivated by these considerations, we have developed an initial set of small area prototype arrays using thin-film processing methods and polycrystalline silicon transistors. These prototypes were developed in the spirit of exploring the possibility of creating large area arrays offering single photon counting capabilities and, to our knowledge, are the first photon counting arrays fabricated using thin film techniques. In this paper, the architecture of the prototype pixels is presented and considerations that influenced the design of the pixel circuits, including amplifier noise, TFT performance variations, and minimum feature size, are discussed.

  7. Wafer of Intel Pentium 4 Prescott Chips

    CERN Multimedia

    Silicon wafer with hundreds of Penryn cores (microprocessor). There are around four times as many Prescott chips can be made per wafer than with the previous generation of Northwood-core Pentium 4 processors. It is faster and cheaper.

  8. Channeling and Radiation of Electrons in Silicon Single Crystals and Si1−xGex Crystalline Undulators

    DEFF Research Database (Denmark)

    Backe, H.; Krambrich, D.; Lauth, W.

    2013-01-01

    The phenomenon of channeling and the basic features of channeling radiation emission are introduced in a pedestrian way. Both, radiation spectra as well as dechanneling length measurements at electron beam energies between 195 and 855 MeV feature quantum state phenomena for the (110) planar...... potential of the silicon single crystals. Radiation from a crystalline undulator, produced at the Aarhus University (UAAR), has been investigated at the Mainz Microtron electron accelerator facility MAMI. The 4-period epitaxially grown strained layer Si1−xGex undulator had a period length λu = 9.9 μm...

  9. Comparative analysis on surface property in anodic oxidation polishing of reaction-sintered silicon carbide and single-crystal 4H silicon carbide

    Science.gov (United States)

    Shen, Xinmin; Tu, Qunzhang; Deng, Hui; Jiang, Guoliang; He, Xiaohui; Liu, Bin; Yamamura, Kazuya

    2016-04-01

    For effective machining of difficult-to-machine materials, such as reaction-sintered silicon carbide (RS-SiC) and single-crystal 4H silicon carbide (4H-SiC), a novel polishing technique named anodic oxidation polishing was proposed, which combined with the anodic oxidation of substrate and slurry polishing of oxide. By scanning electron microscopy/energy-dispersive X-ray spectroscopy (SEM-EDX) observation and atomic force microscopy analysis, both the anodic oxidation behaviors of RS-SiC and 4H-SiC were investigated. Through comparison of the surfaces before and after hydrofluoric acid etching of the oxidized samples by the scanning white light interferometry (SWLI) measurement, the relationships between oxidation depth and oxidation time were obtained, and the calculated oxidation rate for RS-SiC was 5.3 nm/s and that for 4H-SiC was 5.8 nm/s based on the linear Deal-Grove model. Through anodic oxidation polishing of RS-SiC substrate and 4H-SiC substrate, respectively, the surface roughness rms obtained by SWLI was improved to 2.103 nm for RS-SiC and to 0.892 nm for 4H-SiC. Experimental results indicate that anodic oxidation polishing is an effective method for the machining of RS-SiC and 4H-SiC samples, which would improve the process level of SiC substrates and promote the application of SiC products in the fields of optics, ceramics, semiconductors, electronics, and so on.

  10. Rapid manufacturing of low-noise membranes for nanopore sensors by trans-chip illumination lithography

    International Nuclear Information System (INIS)

    Janssen, Xander J A; Jonsson, Magnus P; Plesa, Calin; Soni, Gautam V; Dekker, Cees; Dekker, Nynke H

    2012-01-01

    In recent years, the concept of nanopore sensing has matured from a proof-of-principle method to a widespread, versatile technique for the study of biomolecular properties and interactions. While traditional nanopore devices based on a nanopore in a single layer membrane supported on a silicon chip can be rapidly fabricated using standard microfabrication methods, chips with additional insulating layers beyond the membrane region can provide significantly lower noise levels, but at the expense of requiring more costly and time-consuming fabrication steps. Here we present a novel fabrication protocol that overcomes this issue by enabling rapid and reproducible manufacturing of low-noise membranes for nanopore experiments. The fabrication protocol, termed trans-chip illumination lithography, is based on illuminating a membrane-containing wafer from its backside such that a photoresist (applied on the wafer’s top side) is exposed exclusively in the membrane regions. Trans-chip illumination lithography permits the local modification of membrane regions and hence the fabrication of nanopore chips containing locally patterned insulating layers. This is achieved while maintaining a well-defined area containing a single thin membrane for nanopore drilling. The trans-chip illumination lithography method achieves this without relying on separate masks, thereby eliminating time-consuming alignment steps as well as the need for a mask aligner. Using the presented approach, we demonstrate rapid and reproducible fabrication of nanopore chips that contain small (12 μm × 12 μm) free-standing silicon nitride membranes surrounded by insulating layers. The electrical noise characteristics of these nanopore chips are shown to be superior to those of simpler designs without insulating layers and comparable in quality to more complex designs that are more challenging to fabricate. (paper)

  11. Monolithically Integrated High-β Nanowire Lasers on Silicon.

    Science.gov (United States)

    Mayer, B; Janker, L; Loitsch, B; Treu, J; Kostenbader, T; Lichtmannecker, S; Reichert, T; Morkötter, S; Kaniber, M; Abstreiter, G; Gies, C; Koblmüller, G; Finley, J J

    2016-01-13

    Reliable technologies for the monolithic integration of lasers onto silicon represent the holy grail for chip-level optical interconnects. In this context, nanowires (NWs) fabricated using III-V semiconductors are of strong interest since they can be grown site-selectively on silicon using conventional epitaxial approaches. Their unique one-dimensional structure and high refractive index naturally facilitate low loss optical waveguiding and optical recirculation in the active NW-core region. However, lasing from NWs on silicon has not been achieved to date, due to the poor modal reflectivity at the NW-silicon interface. We demonstrate how, by inserting a tailored dielectric interlayer at the NW-Si interface, low-threshold single mode lasing can be achieved in vertical-cavity GaAs-AlGaAs core-shell NW lasers on silicon as measured at low temperature. By exploring the output characteristics along a detection direction parallel to the NW-axis, we measure very high spontaneous emission factors comparable to nanocavity lasers (β = 0.2) and achieve ultralow threshold pump energies ≤11 pJ/pulse. Analysis of the input-output characteristics of the NW lasers and the power dependence of the lasing emission line width demonstrate the potential for high pulsation rates ≥250 GHz. Such highly efficient nanolasers grown monolithically on silicon are highly promising for the realization of chip-level optical interconnects.

  12. Noise and trigger efficiency characterization of cooled silicon pad detectors

    CERN Document Server

    Marques, A C; Correia, J G; Silva, M R; Rudge, A; Weilhammer, P; Soares, J C

    2007-01-01

    Technical progress on silicon pad electron detectors, currently used in emission channelling experiments to study lattice location of radioactive dopants and impurities in single crystals, is reported. Noise and trigger efficiency improvements are achieved by using 500 μm and 1 mm thick detectors coupled to a cooled readout system. The static properties, noise, gamma ray and electron trigger efficiency and energy resolution for different temperatures under air and vacuum were measured. The advantages of the future implementation of 1 mm silicon pad detectors with cooled self-triggering readout chips are discussed.

  13. Transport properties of boron-doped single-walled silicon carbide nanotubes

    International Nuclear Information System (INIS)

    Yang, Y.T.; Ding, R.X.; Song, J.X.

    2011-01-01

    The doped boron (B) atom in silicon carbide nanotube (SiCNT) can substitute carbon or silicon atom, forming two different structures. The transport properties of both B-doped SiCNT structures are investigated by the method combined non-equilibrium Green's function with density functional theory (DFT). As the bias ranging from 0.8 to 1.0 V, the negative differential resistance (NDR) effect occurs, which is derived from the great difficulty for electrons tunneling from one electrode to another with the increasing of localization of molecular orbital. The high similar transport properties of both B-doped SiCNT indicate that boron is a suitable impurity for fabricating nano-scale SiCNT electronic devices.

  14. Self-assembling protein arrays on DNA chips by auto-labeling fusion proteins with a single DNA address

    NARCIS (Netherlands)

    Jongsma, M.A.; Litjens, R.H.G.M.

    2006-01-01

    The high-throughput deposition of recombinant proteins on chips, beads or biosensor devices would be greatly facilitated by the implementation of self-assembly concepts. DNA-directed immobilization via conjugation of proteins to an oligonucleotide would be preeminently suited for this purpose. Here,

  15. A silicon-based single-electron interferometer coupled to a fermionic sea

    OpenAIRE

    Chatterjee, Anasua; Shevchenko, Sergey N.; Barraud, Sylvain; Otxoa, Ruben M.; Nori, Franco; Morton, John J. L.; Gonzalez-Zalba, M. Fernando

    2017-01-01

    We study Landau-Zener-Stueckelberg-Majorana (LZSM) interferometry under the influence of projective readout using a charge qubit tunnel-coupled to a fermionic sea. This allows us to characterise the coherent charge qubit dynamics in the strong-driving regime. The device is realised within a silicon complementary metal-oxide-semiconductor (CMOS) transistor. We first read out the charge state of the system in a continuous non-demolition manner by measuring the dispersive response of a high-freq...

  16. Hybrid III-V/silicon lasers

    Science.gov (United States)

    Kaspar, P.; Jany, C.; Le Liepvre, A.; Accard, A.; Lamponi, M.; Make, D.; Levaufre, G.; Girard, N.; Lelarge, F.; Shen, A.; Charbonnier, P.; Mallecot, F.; Duan, G.-H.; Gentner, J.-.; Fedeli, J.-M.; Olivier, S.; Descos, A.; Ben Bakir, B.; Messaoudene, S.; Bordel, D.; Malhouitre, S.; Kopp, C.; Menezo, S.

    2014-05-01

    The lack of potent integrated light emitters is one of the bottlenecks that have so far hindered the silicon photonics platform from revolutionizing the communication market. Photonic circuits with integrated light sources have the potential to address a wide range of applications from short-distance data communication to long-haul optical transmission. Notably, the integration of lasers would allow saving large assembly costs and reduce the footprint of optoelectronic products by combining photonic and microelectronic functionalities on a single chip. Since silicon and germanium-based sources are still in their infancy, hybrid approaches using III-V semiconductor materials are currently pursued by several research laboratories in academia as well as in industry. In this paper we review recent developments of hybrid III-V/silicon lasers and discuss the advantages and drawbacks of several integration schemes. The integration approach followed in our laboratory makes use of wafer-bonded III-V material on structured silicon-on-insulator substrates and is based on adiabatic mode transfers between silicon and III-V waveguides. We will highlight some of the most interesting results from devices such as wavelength-tunable lasers and AWG lasers. The good performance demonstrates that an efficient mode transfer can be achieved between III-V and silicon waveguides and encourages further research efforts in this direction.

  17. Comparison of three types of XPAD3.2/CdTe single chip hybrids for hard X-ray applications in material science and biomedical imaging

    Science.gov (United States)

    Buton, C.; Dawiec, A.; Graber-Bolis, J.; Arnaud, K.; Bérar, J. F.; Blanc, N.; Boudet, N.; Clémens, J. C.; Debarbieux, F.; Delpierre, P.; Dinkespiler, B.; Gastaldi, T.; Hustache, S.; Morel, C.; Pangaud, P.; Perez-Ponce, H.; Vigeolas, E.

    2014-09-01

    The CHIPSPECT consortium aims at building a large multi-modules CdTe based photon counting detector for hard X-ray applications. For this purpose, we tested nine XPAD3.2 single chip hybrids in various configurations (i.e. Ohmic vs. Schottky contacts or electrons vs. holes collection mode) in order to select the most performing and best suited configuration for our experimental requirements. Measurements have been done using both X-ray synchrotron beams and 241Am source. Preliminary results on the image quality, calibration, stability, homogeneity and linearity of the different types of detectors are presented.

  18. Hydrogenated amorphous silicon photonics

    Science.gov (United States)

    Narayanan, Karthik

    2011-12-01

    Silicon Photonics is quickly proving to be a suitable interconnect technology for meeting the future goals of on-chip bandwidth and low power requirements. However, it is not clear how silicon photonics will be integrated into CMOS chips, particularly microprocessors. The issue of integrating photonic circuits into electronic IC fabrication processes to achieve maximum flexibility and minimum complexity and cost is an important one. In order to minimize usage of chip real estate, it will be advantageous to integrate in three-dimensions. Hydrogenated amorphous silicon (a-Si:H) is emerging as a promising material for the 3-D integration of silicon photonics for on-chip optical interconnects. In addition, a-Si:H film can be deposited using CMOS compatible low temperature plasma-enhanced chemical vapor deposition (PECVD) process at any point in the fabrication process allowing maximum flexibility and minimal complexity. In this thesis, we demonstrate a-Si:H as a high performance alternate platform to crystalline silicon, enabling backend integration of optical interconnects in a hybrid photonic-electronic network-on-chip architecture. High quality passive devices are fabricated on a low-loss a-Si:H platform enabling wavelength division multiplexing schemes. We demonstrate a broadband all-optical modulation scheme based on free-carrier absorption effect, which can enable compact electro-optic modulators in a-Si:H. Furthermore, we comprehensively characterize the optical nonlinearities in a-Si:H and observe that a-Si:H exhibits enhanced nonlinearities as compared to crystalline silicon. Based on the enhanced nonlinearities, we demonstrate low-power four-wave mixing in a-Si:H waveguides enabling high speed all-optical devices in an a-Si:H platform. Finally, we demonstrate a novel data encoding scheme using thermal and all-optical tuning of silicon waveguides, increasing the spectral efficiency in an interconnect link.

  19. Lab-on-chip system combining a microfluidic-ELISA with an array of amorphous silicon photosensors for the detection of celiac disease epitopes

    Directory of Open Access Journals (Sweden)

    Francesca Costantini

    2015-12-01

    The correct operation of the developed lab-on-chip has been demonstrated using rabbit serum in the microfluidic ELISA. In particular, optimizing the dilution factors of both sera and Ig-HRP samples in the flowing solutions, the specific and non-specific antibodies against GPs can be successfully distinguished, showing the suitability of the presented device to effectively screen celiac disease epitopes.

  20. Development, Optimisation and Characterisation of a Radiation Hard Mixed-Signal Readout Chip for LHCb

    CERN Document Server

    Löchner, S

    2006-01-01

    The Beetle chip is a radiation hard, 128 channel pipelined readout chip for silicon strip detectors. The front-end consists of a charge-sensitive preamplifier followed by a CR-RC pulse shaper. The analogue pipeline memory is implemented as a switched capacitor array with a maximum latency of 4 us. The 128 analogue channels are multiplexed and transmitted off chip in 900 ns via four current output drivers. Beside the pipelined readout path, the Beetle provides a fast discrimination of the front-end pulse. Within this doctoral thesis parts of the radiation hard Beetle readout chip for the LHCb experiment have been developed. The overall chip performances like noise, power consumption, input charge rates have been optimised as well as the elimination of failures so that the Beetle fulfils the requirements of the experiment. Furthermore the characterisation of the chip was a major part of this thesis. Beside the detailed measurement of the chip performance, several irradiation tests and an Single Event Upset (SEU...

  1. Crack Detection in Single-Crystalline Silicon Wafer Using Laser Generated Lamb Wave

    Directory of Open Access Journals (Sweden)

    Min-Kyoo Song

    2013-01-01

    Full Text Available In the semiconductor industry, with increasing requirements for high performance, high capacity, high reliability, and compact components, the crack has been one of the most critical issues in accordance with the growing requirement of the wafer-thinning in recent years. Previous researchers presented the crack detection on the silicon wafers with the air-coupled ultrasonic method successfully. However, the high impedance mismatching will be the problem in the industrial field. In this paper, in order to detect the crack, we propose a laser generated Lamb wave method which is not only noncontact, but also reliable for the measurement. The laser-ultrasonic generator and the laser-interferometer are used as a transmitter and a receiver, respectively. We firstly verified the identification of S0 and A0 lamb wave modes and then conducted the crack detection under the thermoelastic regime. The experimental results showed that S0 and A0 modes of lamb wave were clearly generated and detected, and in the case of the crack detection, the estimated crack size by 6 dB drop method was almost equal to the actual crack size. So, the proposed method is expected to make it possible to detect the crack in the silicon wafer in the industrial fields.

  2. Simulation of V/G During Φ450 mm Czochralski Grown Silicon Single Crystal Growth Under the Different Crystal and Crucible Rotation Rates

    Directory of Open Access Journals (Sweden)

    Guan X J

    2016-01-01

    Full Text Available For discovering the principle of processing parameter combination for the stable growth and better wafer quality of Φ450 mm Czochralski grown silicon single crystal (shortly called Cz silicon crystal, the effects of crystal rotation rate and crucible one on the V/G ratio were simulated by using CGSim software. The results show that their effect laws on the V/G ratio for Φ450 mm Cz silicon crystal growth are some different from that for Φ200 mm Cz silicon one, and the effects of crucible rotation rate are relatively smaller than that of crystal one and its increasing only makes the demarcation point between two regions with different V/G ratio variations outward move along radial direction, and it promotes the wafer quality to weaken crystal rotation rate and strengthen crucible one.

  3. Measurement of the mechanical properties of single Synechocystis sp. strain PCC6803 cells in different osmotic concentrations using a robot-integrated microfluidic chip.

    Science.gov (United States)

    Chang, Di; Sakuma, Shinya; Kera, Kota; Uozumi, Nobuyuki; Arai, Fumihito

    2018-03-23

    Synechocystis sp. strain PCC6803 (Synechocystis) is a model microorganism and its mechanosensitive (MS) channels play important roles in its osmoadaptation mechanism. When the osmotic concentration of the culture environment changes, the inner pressure of the cell also changes due to the transportation of water through ion channels. Because the tension in the cell membrane relates to the inner pressure, we expect that the response of the MS channels to an osmotic concentration change could be evaluated by measuring their mechanical properties. Here, we propose a system for the measurement of the mechanical properties of a single Synechocystis cell. We developed a robot-integrated microfluidic chip combined with optical tweezers. The chip has an external actuated pushing probe and a force sensor probe. A single cell was located between the tip of both probes using the optical tweezers and was then deformed using the probes. As a result, we could measure the force and deformation and compare the Young's moduli of two groups: a group of wild type cells and a group of mutant (genetically modified) cells with a defect in the MS channels, at three different osmotic concentrations. The results showed that the Young's modulus of each group changed according to the osmotic concentration, while changes in cell size were too small to be detected. These results confirmed that the proposed evaluation method provides an understanding of the physiological function of MS channels for keeping the cell integrity of microorganisms when the cells are exposed to different external osmotic changes.

  4. Design and Implementation of 8051 Single-Chip Microcontroller for Stationary 1.0 kW PEM Fuel Cell System

    Directory of Open Access Journals (Sweden)

    Pei-Hsing Huang

    2014-01-01

    Full Text Available Proton exchange membrane fuel cells (PEMFCs have attracted significant interest as a potential green energy source. However, if the performance of such systems is to be enhanced, appropriate control strategies must be applied. Accordingly, the present study proposes a sophisticated control system for a 1.0 kW PEMFC system comprising a fuel cell stack, an auxiliary power supply, a DC-DC buck converter, and a DC-AC inverter. The control system is implemented using an 8051 single-chip microcontroller and is designed to optimize the system performance and safety in both the startup phase and the long-term operation phase. The major features of the proposed control system are described and the circuit diagrams required for its implementation introduced. In addition, the touch-sensitive, intuitive human-machine interface is introduced and typical screens are presented. Finally, the electrical characteristics of the PEMFC system are briefly examined. Overall, the results confirm that the single-chip microcontroller presented in this study has significant potential for commercialization in the near future.

  5. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays

    KAUST Repository

    Zhai, Yujia

    2012-11-26

    We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf

  6. Readout of silicon strip detectors

    CERN Document Server

    Dabrowski, W

    2003-01-01

    Various architectural and technological options of readout electronics for silicon strip detectors in vertex and tracking applications are discussed briefly. The ABCD3T ASIC for the readout of silicon strip detectors in the ATLAS semiconductor tracker is presented. The architecture of the chip, some design issues and radiation effects are discussed.

  7. Flip chip assembly of thinned chips for hybrid pixel detector applications

    International Nuclear Information System (INIS)

    Fritzsch, T; Zoschke, K; Rothermund, M; Oppermann, H; Woehrmann, M; Ehrmann, O; Lang, K D; Huegging, F

    2014-01-01

    There is a steady trend to ultra-thin microelectronic devices. Especially for future particle detector systems a reduced readout chip thickness is required to limit the loss of tracking precision due to scattering. The reduction of silicon thickness is performed at wafer level in a two-step thinning process. To minimize the risk of wafer breakage the thinned wafer needs to be handled by a carrier during the whole process chain of wafer bumping. Another key process is the flip chip assembly of thinned readout chips onto thin sensor tiles. Besides the prevention of silicon breakage the minimization of chip warpage is one additional task for a high yield and reliable flip chip process. A new technology using glass carrier wafer will be described in detail. The main advantage of this technology is the combination of a carrier support during wafer processing and the chip support during flip chip assembly. For that a glass wafer is glue-bonded onto the backside of the thinned readout chip wafer. After the bump deposition process the glass-readout chip stack is diced in one step. Finally the glass carrier chip is released by laser illumination after flip chip assembly of the readout chip onto sensor tile. The results of the flip chip assembly process development for the ATLAS IBL upgrade are described more in detail. The new ATLAS FEI4B chip with a size of 20 × 19 mm 2 is flip chip bonded with a thickness of only 150 μm, but the capability of this technology has been demonstrated on hybrid modules with a reduced readout chip thickness of down to 50 μm which is a major step for ultra-thin electronic systems

  8. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  9. Ultrafast terahertz control of extreme tunnel currents through single atoms on a silicon surface

    DEFF Research Database (Denmark)

    Jelic, Vedran; Iwaszczuk, Krzysztof; Nguyen, Peter H.

    2017-01-01

    Ultrafast control of current on the atomic scale is essential for future innovations in nanoelectronics. Extremely localized transient electric fields on the nanoscale can be achieved by coupling picosecond duration terahertz pulses to metallic nanostructures. Here, we demonstrate terahertz...... scanning tunnelling microscopy (THz-STM) in ultrahigh vacuum as a new platform for exploring ultrafast non-equilibrium tunnelling dynamics with atomic precision. Extreme terahertz-pulse-driven tunnel currents up to 10(7) times larger than steady-state currents in conventional STM are used to image...... individual atoms on a silicon surface with 0.3nm spatial resolution. At terahertz frequencies, the metallic-like Si(111)-(7 x 7) surface is unable to screen the electric field from the bulk, resulting in a terahertz tunnel conductance that is fundamentally different than that of the steady state. Ultrafast...

  10. Atomic hydrogen and oxygen adsorptions in single-walled zigzag silicon nanotubes

    International Nuclear Information System (INIS)

    Chen, Haoliang; Ray, Asok K.

    2013-01-01

    Ab initio calculations have been performed to study the electronic and geometric structure properties of zigzag silicon nanotubes. Full geometry and spin optimizations have been performed without any symmetry constraints with an all electron 3-21G* basis set and the B3LYP hybrid functional. The largest zigzag SiNT studied here, (12, 0), has a binding energy per atom of 3.584 eV. Atomic hydrogen and oxygen adsorptions on (9, 0) and (10, 0) nanotubes have also been studied by optimizing the distances of the adatoms from both inside and outside the tube. The adatom is initially placed in four adsorption sites-parallel bridge (PB), zigzag bridge (ZB), hollow, and on-top site. The on-top site is the most preferred site for hydrogen atom adsorbed on (9, 0), with an adsorption energy of 3.0 eV and an optimized distance of 1.49 Å from the adatom to the nearest silicon atom. For oxygen adsorption on (9, 0), the most preferred site is the ZB site, with an adsorption energy of 5.987 eV and an optimized distance of 1.72 Å. For atomic hydrogen adsorption on (10, 0), the most preferred site is also the on-top site with an adsorption energy of 3.174 eV and an optimized distance of 1.49 Å. For adsorption of atomic oxygen on (10, 0), the most preferred site is PB site, with an adsorption energy of 6.306 eV and an optimized distance of 1.71 Å. The HOMO–LUMO gaps of (9, 0) after adsorptions of hydrogen and oxygen atoms decrease while the HOMO–LUMO gaps of (10, 0) increase after adsorption of hydrogen and oxygen

  11. Droplet-based micro oscillating-flow PCR chip

    Science.gov (United States)

    Wang, Wei; Li, Zhi-Xin; Luo, Rong; Lü, Shu-Hai; Xu, Ai-Dong; Yang, Yong-Jun

    2005-08-01

    Polymerase chain reactions (PCR), thermally activated chemical reactions which are widely used for nucleic acid amplification, have recently received much attention in microelectromechanical systems and micro total analysis systems because a wide variety of DNA/RNA molecules can be enriched by PCR for further analyses. In the present work, a droplet-based micro oscillating-flow PCR chip was designed and fabricated by the silicon microfabrication technique. Three different temperature zones, which were stable at denaturation, extension and annealing temperatures and isolated from each other by a thin-wall linkage, were integrated with a single, simple and straight microchannel to form the chip's basic functional structure. The PCR mixture was injected into the chip as a single droplet and flowed through the three temperature zones in the main microchannel in an oscillating manner to achieve the temperature maintenance and transitions. The chip's thermal performance was theoretically analyzed and numerically simulated. The results indicated that the time needed for the temperature of the droplet to change to the target value is less than 1 s, and the root mean square error of temperature is less than 0.2 °C. A droplet of 1 µl PCR mixture with standard HPV (Human Papilloma Virus)-DNA sample inside was amplified by the present chip and the results were analyzed by slab gel electrophoresis with separation of DNA markers in parallel. The electrophoresis results demonstrated that the micro oscillating-flow PCR chip successfully amplified the HPV-DNA, with a processing time of about 15 min which is significantly reduced compared to that for the conventional PCR instrument.

  12. Enhanced efficiency of hybrid amorphous silicon solar cells based on single-walled carbon nanotubes and polymer composite thin film

    Science.gov (United States)

    Rajanna, Pramod M.; Gilshteyn, Evgenia P.; Yagafarov, Timur; Aleekseeva, Alena K.; Anisimov, Anton S.; Neumüller, Alex; Sergeev, Oleg; Bereznev, Sergei; Maricheva, Jelena; Nasibulin, Albert G.

    2018-03-01

    We report a simple approach to fabricate hybrid solar cells (HSCs) based on a single-walled carbon nanotube (SWCNT) film and thin film hydrogenated amorphous silicon (a-Si:H). Randomly oriented high-quality SWCNTs with conductivity enhanced by means of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate are used as a window layer and a front electrode. A series of HSCs are fabricated in ambient conditions with varying SWCNT film thicknesses. The polymethylmethacrylate layer drop-casted on fabricated HSCs reduces the reflection fourfold and enhances the short-circuit J sc , open-circuit V oc , and efficiency by nearly 10%. A state-of-the-art J-V performance is shown for SWCNT/a-Si HSC with an open-circuit voltage of 900 mV and an efficiency of 3.4% under simulated one-sun AM 1.5 G direct illumination.

  13. Novel Gas Sensor Arrays Based on High-Q SAM-Modified Piezotransduced Single-Crystal Silicon Bulk Acoustic Resonators

    Directory of Open Access Journals (Sweden)

    Yuan Zhao

    2017-06-01

    Full Text Available This paper demonstrates a novel micro-size (120 μm × 200 μm piezoelectric gas sensor based on a piezotransduced single-crystal silicon bulk acoustic resonator (PSBAR. The PSBARs operate at 102 MHz and possess high Q values (about 2000, ensuring the stability of the measurement. A corresponding gas sensor array is fabricated by integrating three different self-assembled monolayers (SAMs modified PSBARs. The limit of detection (LOD for ethanol vapor is demonstrated to be as low as 25 ppm with a sensitivity of about 1.5 Hz/ppm. Two sets of identification code bars based on the sensitivities and the adsorption energy constants are utilized to successfully discriminate isopropanol (IPA, ethanol, hexane and heptane vapors at low and high gas partial pressures, respectively. The proposed sensor array shows the potential to form a portable electronic nose system for volatile organic compound (VOC differentiation.

  14. Quantum dot SOA/silicon external cavity multi-wavelength laser.

    Science.gov (United States)

    Zhang, Yi; Yang, Shuyu; Zhu, Xiaoliang; Li, Qi; Guan, Hang; Magill, Peter; Bergman, Keren; Baehr-Jones, Thomas; Hochberg, Michael

    2015-02-23

    We report a hybrid integrated external cavity, multi-wavelength laser for high-capacity data transmission operating near 1310 nm. This is the first demonstration of a single cavity multi-wavelength laser in silicon to our knowledge. The device consists of a quantum dot reflective semiconductor optical amplifier and a silicon-on-insulator chip with a Sagnac loop mirror and microring wavelength filter. We show four major lasing peaks from a single cavity with less than 3 dB power non-uniformity and demonstrate error-free 4 × 10 Gb/s data transmission.

  15. Effect of gamma irradiation on leakage current in CMOS read-out chips for the ATLAS upgrade silicon strip tracker at the HL-LHC

    CERN Document Server

    Stucci, Stefania Antonia; Lynn, Dave; Kierstead, James; Kuczewski, Philip; van Nieuwenhuizen, Gerrit J; Rosin, Guy; Tricoli, Alessandro

    2017-01-01

    The increase of the leakage current of NMOS transistors in detector readout chips in certain 130 nm CMOS technologies during exposure to ionising radiation needs special consideration in the design of detector systems, as this can result in a large increase of the supply current and power dissipation. As part of the R&D; program for the upgrade of the ATLAS inner detector tracker for the High Luminosity upgrade of the LHC at CERN, a dedicated set of irradiations have been carried out with the $^60$Co gamma-ray source at the Brookhaven National Laboratory. Measurements will be presented that characterise the increase in the digital leakage current in the 130 nm-technology ABC130 readout chips. The variation of the current as a function of time and total ionising dose has been studied under various conditions of dose rate, temperature and power applied to the chip. The range of variation of dose rates and temperatures has been set to be close to those expected at the High Luminosity LHC, i.e. in the range 0...

  16. Multicore systems on-chip practical software/hardware design

    CERN Document Server

    Abdallah, Abderazek Ben

    2013-01-01

    System on chips designs have evolved from fairly simple unicore, single memory designs to complex heterogeneous multicore SoC architectures consisting of a large number of IP blocks on the same silicon. To meet high computational demands posed by latest consumer electronic devices, most current systems are based on such paradigm, which represents a real revolution in many aspects in computing.The attraction of multicore processing for power reduction is compelling. By splitting a set of tasks among multiple processor cores, the operating frequency necessary for each core can be reduced, allowi

  17. Shor's quantum factoring algorithm on a photonic chip.

    Science.gov (United States)

    Politi, Alberto; Matthews, Jonathan C F; O'Brien, Jeremy L

    2009-09-04

    Shor's quantum factoring algorithm finds the prime factors of a large number exponentially faster than any other known method, a task that lies at the heart of modern information security, particularly on the Internet. This algorithm requires a quantum computer, a device that harnesses the massive parallelism afforded by quantum superposition and entanglement of quantum bits (or qubits). We report the demonstration of a compiled version of Shor's algorithm on an integrated waveguide silica-on-silicon chip that guides four single-photon qubits through the computation to factor 15.

  18. Single-event upset and snapback in silicon-on-insulator devices

    International Nuclear Information System (INIS)

    Dodd, Paul E.; Shaneyfelt, Marty R.; Schwank, James R.; Hash, Gerald L.; Draper, Bruce L.; Winokur, Peter S.

    2000-01-01

    SEU is studied in SOI transistors and circuits with various body tie structures. The importance of impact ionization effects, including single-event snapback, is explored. Implications for hardness assurance testing of SOI integrated circuits are discussed

  19. Towards a new generation of pixel detector readout chips

    CERN Document Server

    Campbell, M; Ballabriga, R.; Frojdh, E.; Heijne, E.; Llopart, X.; Poikela, T.; Tlustos, L.; Valerio, P.; Wong, W.

    2016-01-01

    The Medipix3 Collaboration has broken new ground in spectroscopic X-ray imaging and in single particle detection and tracking. This paper will review briefly the performance and limitations of the present generation of pixel detector readout chips developed by the Collaboration. Through Silicon Via technology has the potential to provide a significant improvement in the tile- ability and more flexibility in the choice of readout architecture. This has been explored in the context of 3 projects with CEA-LETI using Medipix3 and Timepix3 wafers. The next generation of chips will aim to provide improved spectroscopic imaging performance at rates compatible with human CT. It will also aim to provide full spectroscopic images with unprecedented energy and spatial resolution. Some of the opportunities and challenges posed by moving to a more dense CMOS process will be discussed.

  20. Harnessing light energy with a planar transparent hybrid of graphene/single wall carbon nanotube/n-type silicon heterojunction solar cell

    DEFF Research Database (Denmark)

    Chen, Leifeng; Yu, Hua; Zhong, Jiasong

    2015-01-01

    The photovoltaic conversion efficiency of a solar cell fabricated by a simple electrophoretic method with a planar transparent hybrid of graphenes (GPs) and single wall carbon nanotubes (SCNTs)/n-type silicon heterojunction was significantly increased compared to GPs/n-Si and SCNTs/n-Si solar cells...

  1. On nanostructured silicon success

    DEFF Research Database (Denmark)

    Sigmund, Ole; Jensen, Jakob Søndergaard; Frandsen, Lars Hagedorn

    2016-01-01

    Recent Letters by Piggott et al. 1 and Shen et al. 2 claim the smallest ever dielectric wave length and polarization splitters. The associated News & Views article by Aydin3 states that these works “are the first experimental demonstration of on-chip, silicon photonic components based on complex...

  2. Modelling of heating and photoexcitation of single-crystal silicon under multipulse irradiation by a nanosecond laser at 1.06 μm

    Science.gov (United States)

    Polyakov, D. S.; Yakovlev, E. B.

    2018-03-01

    We report a theoretical study of heating and photoexcitation of single-crystal silicon by nanosecond laser radiation at a wavelength of 1.06 μm. The proposed physicomathematical model of heating takes into account the complex nonlinear dynamics of the interband absorption coefficient of silicon and the contribution of the radial heat removal to the cooling of silicon between pulses under multipulse irradiation, which allows one to obtain a satisfactory agreement between theoretical predictions of silicon melting thresholds at different nanosecond pulse durations and experimental data (both under single-pulse and multipulse irradiation). It is found that under irradiation by nanosecond pulses at a wavelength of 1.06 μm, the dynamic Burshtein–Moss effect can play an important role in processes of photoexcitation and heating. It is shown that with the regimes typical for laser multipulse microprocessing of silicon (the laser spot diameter is less than 100 μm, and the repetition rate of pulses is about 100 kHz), the radial heat removal cannot be neglected in the analysis of heat accumulation processes.

  3. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Directory of Open Access Journals (Sweden)

    Shouleh Nikzad

    2016-06-01

    Full Text Available Ultraviolet (UV studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness.

  4. Mimicking both petal and lotus effects on a single silicon substrate by tuning the wettability of nanostructured surfaces.

    Science.gov (United States)

    Dawood, M K; Zheng, H; Liew, T H; Leong, K C; Foo, Y L; Rajagopalan, R; Khan, S A; Choi, W K

    2011-04-05

    We describe a new method of fabricating large-area, highly scalable, "hybrid" superhydrophobic surfaces on silicon (Si) substrates with tunable, spatially selective adhesion behavior by controlling the morphologies of Si nanowire arrays. Gold (Au) nanoparticles were deposited on Si by glancing-angle deposition, followed by metal-assisted chemical etching of Si to form Si nanowire arrays. These surfaces were chemically modified and rendered hydrophobic by fluorosilane deposition. Au nanoparticles with different size distributions resulted in the synthesis of Si nanowires with very different morphologies (i.e., clumped and straight nanowire surfaces). The difference in nanowire morphology is attributed to capillary force-induced nanocohesion, which is due to the difference in nanowire porosity. The clumped nanowire surface demonstrated the lotus effect, and the straighter nanowires demonstrated the ability to pin water droplets while maintaining large contact angles (i.e., the petal effect). The high contact angles in both cases are explained by invoking the Cassie-Baxter wetting state. The high adhesion behavior of the straight nanowire surface may be explained by a combination of attractive van der Waals forces and capillary adhesion. We demonstrate the spatial patterning of both low- and high-adhesion superhydrophobicity on the same substrate by the simultaneous synthesis of clumped and straight silicon nanowires. The demonstration of hybrid superhydrophobic surfaces with spatially selective, tunable adhesion behavior on single substrates paves the way for future applications in microfluidic channels, substrates for biologically and chemically based analysis and detection where it is necessary to analyze a particular droplet in a defined location on a surface, and as a platform to study in situ chemical mixing and interfacial reactions of liquid pearls.

  5. The CDF Run IIb Silicon Detector

    Energy Technology Data Exchange (ETDEWEB)

    M. Aoki; N. Bacchetta; S. Behari et al.

    2004-02-25

    Fermilab plans to deliver 5-15 fb{sup -1} of integrated luminosity to the CDF and D0 experiments. The current inner silicon detectors at CDF (SVXIIa and L00) will not tolerate the radiation dose associated with high luminosity running and will need to be replaced. A new readout chip (SVX4) has been designed in radiation-hard 0.25 {micro}m CMOS technology. Single sided sensors are arranged in a compact structure, called a stave, with integrated readout and cooling systems. This paper describes the general design of the Run IIb system, testing results of prototype electrical components (staves), and prototype silicon sensor performance before and after irradiation.

  6. Fast single run of vanilla fingerprint markers on microfluidic-electrochemistry chip for confirmation of common frauds.

    Science.gov (United States)

    Avila, Mónica; Zougagh, Mohammed; Escarpa, Alberto; Ríos, Angel

    2009-10-01

    A new strategy based on the fast separation of the fingerprint markers of Vanilla planifolia extracts and vanilla-related samples on microfluidic-electrochemistry chip is proposed. This methodology allowed the detection of all required markers for confirmation of common frauds in this field. The elution order was strategically connected with sequential sample screening and analyte confirmation steps, where first ethyl vanillin was detected to distinguish natural from adultered samples; second, vanillin as prominent marker in V. planifolia, but frequently added in its synthetic form; and third, the final detection of the fingerprint markers (p-hydroxybenzaldehyde, vanillic acid, and p-hydroxybenzoic acid) of V. planifolia with confirmation purposes. The reliability of the proposed methodology was demonstrated in the confirmation the natural or non-natural origin of vanilla in samples using V. planifolia extracts and other selected food samples containing this flavor.

  7. Simultaneous measurement of sensor-protein dynamics and motility of a single cell by on-chip microcultivation system

    Directory of Open Access Journals (Sweden)

    Kawagishi Ikuro

    2004-04-01

    Full Text Available Abstract Measurement of the correlation between sensor-protein expression, motility and environmental change is important for understanding the adaptation process of cells during their change of generation. We have developed a novel assay exploiting the on-chip cultivation system, which enabled us to observe the change of the localization of expressed sensor-protein and the motility for generations. Localization of the aspartate sensitive sensor protein at two poles in Escherichia coli decreased quickly after the aspartate was added into the cultivation medium. However, it took more than three generations for recovering the localization after the removal of aspartate from the medium. Moreover, the tumbling frequency was strongly related to the localization of the sensor protein in a cell. The results indicate that the change of the spatial localization of sensor protein, which was inherited for more than three generations, may contribute to cells, motility as the inheritable information.

  8. Microchannel-connected SU-8 honeycombs by single-step projection photolithography for positioning cells on silicon oxide nanopillar arrays

    International Nuclear Information System (INIS)

    Larramendy, Florian; Paul, Oliver; Blatche, Marie Charline; Mazenq, Laurent; Laborde, Adrian; Temple-Boyer, Pierre

    2015-01-01

    We report on the fabrication, functionalization and testing of SU-8 microstructures for cell culture and positioning over large areas. The microstructure consists of a honeycomb arrangement of cell containers interconnected by microchannels and centered on nanopillar arrays designed for promoting cell positioning. The containers have been dimensioned to trap single cells and, with a height of 50 µm, prevent cells from escaping. The structures are fabricated using a single ultraviolet photolithography exposure with focus depth in the lower part of the SU-8 resist. With optimized process parameters, microchannels of various aspect ratios are thus produced. The cell containers and microchannels serve for the organization of axonal growth between neurons. The roughly 2 µm-high and 500 nm-wide nanopillars are made of silicon oxide structured by deep reactive ion etching. In future work, beyond their cell positioning purpose, the nanopillars could be functionalized as sensors. The proof of concept of the novel microstructure for organized cell culture is given by the successful growth of interconnected PC12 cells. Promoted by the honeycomb geometry, a dense network of interconnections between the cells has formed and the intended intimate contact of cells with the nanopillar arrays was observed by scanning electron microscopy. This proves the potential of these new devices as tools for the controlled cell growth in an interconnected container system with well-defined 3D geometry. (paper)

  9. Friction and wear of metals with a single-crystal abrasive grit of silicon carbide: Effect of shear strength of metal

    Science.gov (United States)

    Miyoshi, K.; Buckley, D. H.

    1978-01-01

    Sliding friction experiments were conducted with spherical, single-crystal silicon carbide riders in contact with various metals and with metal riders in contact with silicon carbide flats. Results indicate that: (1) the friction force in the plowing of metal and (2) the groove height (corresponding to the volume of the groove) are related to the shear strength of the metal. That is, they decrease linearly as the shear strength of the bulk metal increases. Grooves are formed in metals primarily from plastic deformation, with occasional metal removal. The relation between the groove width D and the load W can be expressed by W = kD, superscript n which satisfies Meyer's law.

  10. Single atom doping for quantum device development in diamond and silicon

    NARCIS (Netherlands)

    Weis, C.D.; Schuh, A.; Batra, A.; Persaud, A.; Rangelow, I.W.; Bokor, J.; Lo, C.C.; Cabrini, S.; Sideras-Haddad, E.; Fuchs, G.D.; Hanson, R.; Awschalom, D.D.; Schenkel, T.

    2008-01-01

    The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species, and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which function is based on the manipulation of quantum states in

  11. Ternary logic implemented on a single dopant atom field effect silicon transistor

    NARCIS (Netherlands)

    Klein, M.; Mol, J.A.; Verduijn, J.; Lansbergen, G.P.; Rogge, S.; Levine, R.D.; Remacle, F.

    2010-01-01

    We provide an experimental proof of principle for a ternary multiplier realized in terms of the charge state of a single dopant atom embedded in a fin field effect transistor (Fin-FET). Robust reading of the logic output is made possible by using two channels to measure the current flowing through

  12. Silicon Qubits

    Energy Technology Data Exchange (ETDEWEB)

    Ladd, Thaddeus D. [HRL Laboratories, LLC, Malibu, CA (United States); Carroll, Malcolm S. [Sandia National Lab. (SNL-NM), Albuquerque, NM (United States)

    2018-02-28

    Silicon is a promising material candidate for qubits due to the combination of worldwide infrastructure in silicon microelectronics fabrication and the capability to drastically reduce decohering noise channels via chemical purification and isotopic enhancement. However, a variety of challenges in fabrication, control, and measurement leaves unclear the best strategy for fully realizing this material’s future potential. In this article, we survey three basic qubit types: those based on substitutional donors, on metal-oxide-semiconductor (MOS) structures, and on Si/SiGe heterostructures. We also discuss the multiple schema used to define and control Si qubits, which may exploit the manipulation and detection of a single electron charge, the state of a single electron spin, or the collective states of multiple spins. Far from being comprehensive, this article provides a brief orientation to the rapidly evolving field of silicon qubit technology and is intended as an approachable entry point for a researcher new to this field.

  13. Development of Screen-Printed Texture-Barrier Paste for Single-Side Texturization of Interdigitated Back-Contact Silicon Solar Cell Applications

    Directory of Open Access Journals (Sweden)

    Chi-Cheng Chen

    2013-10-01

    Full Text Available Continuous cost reduction of silicon-based solar cells is needed to lower the process time and increase efficiency. To achieve lower costs, screen-printed texture-barrier (SPTB paste was first developed for single-side texturization (ST of the interdigitated back-contact (IBC for silicon-based solar cell applications. The SPTB paste was screen-printed on silicon substrates. The SPTB paste was synthesized from intermixed silicate glass (75 wt %, a resin binder (ethyl cellulose ethoce: 20 wt %, and a dispersing agent (fatty acid: 5 wt %. The silicate glass is a necessity for contact formation during firing. A resin binder and a dispersing agent determine the rheology of the SPTB paste. In this work, by modulating various parameters, including post SPTB firing, alkali texturing, and removal of the SPTB, the ST of IBC silicon solar cells was achieved. Since the advantages of the SPTB paste include low toxicity and prompt formation of the texture-barrier, SPTB is potentially suited for simple fabrication at low-cost for solar cell applications. The cost of the SPTB is around $100/kg which is lower than the SiH4/NH3 gas ambient used in plasma-enhanced chemical vapor deposition (PECVD. Thus, the expensive Si3N4 film deposited by PECVD using SiH4 and NH3 gas ambient for silicon solar cells can be replaced by this SPTB.

  14. Development of Screen-Printed Texture-Barrier Paste for Single-Side Texturization of Interdigitated Back-Contact Silicon Solar Cell Applications.

    Science.gov (United States)

    Chiu, Yu-Shun; Cheng, Chin-Lung; Whang, Thou-Jen; Chen, Chi-Cheng

    2013-10-17

    Continuous cost reduction of silicon-based solar cells is needed to lower the process time and increase efficiency. To achieve lower costs, screen-printed texture-barrier (SPTB) paste was first developed for single-side texturization (ST) of the interdigitated back-contact (IBC) for silicon-based solar cell applications. The SPTB paste was screen-printed on silicon substrates. The SPTB paste was synthesized from intermixed silicate glass (75 wt %), a resin binder (ethyl cellulose ethoce: 20 wt %), and a dispersing agent (fatty acid: 5 wt %). The silicate glass is a necessity for contact formation during firing. A resin binder and a dispersing agent determine the rheology of the SPTB paste. In this work, by modulating various parameters, including post SPTB firing, alkali texturing, and removal of the SPTB, the ST of IBC silicon solar cells was achieved. Since the advantages of the SPTB paste include low toxicity and prompt formation of the texture-barrier, SPTB is potentially suited for simple fabrication at low-cost for solar cell applications. The cost of the SPTB is around $100/kg which is lower than the SiH₄/NH₃ gas ambient used in plasma-enhanced chemical vapor deposition (PECVD). Thus, the expensive Si₃N₄ film deposited by PECVD using SiH₄ and NH₃ gas ambient for silicon solar cells can be replaced by this SPTB.

  15. Analyzing System on A Chip Single Event Upset Responses using Single Event Upset Data, Classical Reliability Models, and Space Environment Data

    Science.gov (United States)

    Berg, Melanie; LaBel, Kenneth; Campola, Michael; Xapsos, Michael

    2017-01-01

    We are investigating the application of classical reliability performance metrics combined with standard single event upset (SEU) analysis data. We expect to relate SEU behavior to system performance requirements. Our proposed methodology will provide better prediction of SEU responses in harsh radiation environments with confidence metrics. single event upset (SEU), single event effect (SEE), field programmable gate array devises (FPGAs)

  16. Features of polyatomic ion emission under sputtering of a silicon single crystal by Au sub m sup - cluster ions

    CERN Document Server

    Akhunov, S; Rasulev, U K

    2003-01-01

    Comparative studies of the emission of secondary cluster Si sub n sup + ions (n=1-11) and polyatomic Si sub n X sub l Y sub k sup + ions (X, Y are Au, B, C, N), as well as doubly charged Si sup 2 sup + ions under bombardment of single crystalline silicon by cluster Au sub m sup - (m=1-5) ions with energy E sub 0 =4-18 keV have been carried out. High non-additivity enhancement of the yield of the Si sub n sup + ions and most polyatomic ones has been observed with an increase of the number of atoms in the projectiles. For Si sup 2 sup + ions the negative non-additive effect has been observed. The increase in the yield of impurity-containing cluster Si sub n X sup + ions allows for an increase by a factor of 100-1000 for the sensitivity of the SIMS analysis of the Au, B, C, N impurities in Si with the use of cluster ions as primary and secondary ones.

  17. Silicon-Vacancy Spin Qubit in Diamond: A Quantum Memory Exceeding 10 ms with Single-Shot State Readout

    Science.gov (United States)

    Sukachev, D. D.; Sipahigil, A.; Nguyen, C. T.; Bhaskar, M. K.; Evans, R. E.; Jelezko, F.; Lukin, M. D.

    2017-12-01

    The negatively charged silicon-vacancy (SiV- ) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable the creation of indistinguishable emitter arrays and deterministic coupling to nanophotonic devices. Despite this, the longest coherence time associated with its electronic spin achieved to date (˜250 ns ) has been limited by coupling to acoustic phonons. We demonstrate coherent control and suppression of phonon-induced dephasing of the SiV- electronic spin coherence by 5 orders of magnitude by operating at temperatures below 500 mK. By aligning the magnetic field along the SiV- symmetry axis, we demonstrate spin-conserving optical transitions and single-shot readout of the SiV- spin with 89% fidelity. Coherent control of the SiV- spin with microwave fields is used to demonstrate a spin coherence time T2 of 13 ms and a spin relaxation time T1 exceeding 1 s at 100 mK. These results establish the SiV- as a promising solid-state candidate for the realization of quantum networks.

  18. DNA Physical Mapping via the Controlled Translocation of Single Molecules through a 5-10nm Silicon Nitride Nanopore

    Science.gov (United States)

    Stein, Derek; Reisner, Walter; Jiang, Zhijun; Hagerty, Nick; Wood, Charles; Chan, Jason

    2009-03-01

    The ability to map the binding position of sequence-specific markers, including transcription-factors, protein-nucleic acids (PNAs) or deactivated restriction enzymes, along a single DNA molecule in a nanofluidic device would be of key importance for the life-sciences. Such markers could give an indication of the active genes at particular stage in a cell's transcriptional cycle, pinpoint the location of mutations or even provide a DNA barcode that could aid in genomics applications. We have developed a setup consisting of a 5-10 nm nanopore in a 20nm thick silicon nitride film coupled to an optical tweezer setup. The translocation of DNA across the nanopore can be detected via blockades in the electrical current through the pore. By anchoring one end of the translocating DNA to an optically trapped microsphere, we hope to stretch out the molecule in the nanopore and control the translocation speed, enabling us to slowly scan across the genome and detect changes in the baseline current due to the presence of bound markers.

  19. Performance enhancement of a silicon MEMS piezoresistive single axis accelerometer with electroplated gold on a proof mass

    Science.gov (United States)

    Sankar, A. Ravi; Lahiri, S. K.; Das, S.

    2009-02-01

    Performance enhancement of a silicon MEMS piezoresistive single axis accelerometer with electroplated gold on a proof mass is presented in this paper. The fabricated accelerometer device consists of a heavy proof mass supported by four thin flexures. Boron-diffused piezoresistors located near the fixed ends of the flexures are used for sensing the developed stress and hence acceleration. Performance enhancement is achieved by electroplating a gold mass of 20 µm thickness on top of the proof mass. A commercially available sulfite-based solution TSG-250™ was used for the electroplating process. Aluminum metal lines were used to form a Wheatstone bridge for signal pick-up. To avoid galvanic corrosion between two dissimilar metals having contact in an electrolyte, a shadow mask technique was used to selectively deposit a Cr/Au seed layer on an insulator atop the proof mass for subsequent electrodeposition. Bulk micromachining was performed using a 5% dual-doped TMAH solution. Fabricated devices with different electroplated gold areas were tested up to ±13 g acceleration. For electroplated gold dimensions of 2500 µm × 2500 µm × 20 µm on a proof mass, sensitivity along the Z-axis is increased by 21.8% as compared to the structure without gold. Off-axis sensitivities along the X- and Y-axes are reduced by 7.6% and 6.9%, respectively.

  20. THE DEVELOPMENT OF A FAMILY OF LIGHTWEIGHT AND WIDE SWATH UAV CAMERA SYSTEMS AROUND AN INNOVATIVE DUAL-SENSOR ON-SINGLE-CHIP DETECTOR

    Directory of Open Access Journals (Sweden)

    B. Delauré

    2013-08-01

    Full Text Available Together with a Belgian industrial consortium VITO has developed the lightweight camera system MEDUSA. It combines high spatial resolution with a wide swath to support missions for large scale mapping and disaster monitoring applications. MEDUSA has been designed to be operated on a solar-powered unmanned aerial vehicle flying in the stratosphere. The camera system contains a custom designed CMOS imager with 2 sensors (each having 10000 × 1200 pixels on 1 chip. One sensor is panchromatic, one is equipped with colour filters. The MEDUSA flight model camera has passed an extensive test campaign and is ready to conduct its maiden flight. First airborne test flights with an engineering model version of the camera have been executed to validate the functionality and the performance of the camera. An image stitching work flow has been developed in order to generate an image composite in near real time of the acquired images. The unique properties of the dual-sensor-on-single-chip detector triggered the development of 2 new camera designs which are currently in preparation. MEDUSA-low is a modified camera system optimised for compatibility with more conventional UAV systems with a payload capacity of 5–10 kg flying at an altitude around 1 km. Its camera acquires both panchromatic and colour images. The MEDUSA geospectral camera is an innovative hyperspectral imager which is equipped with a spatially varying spectral filter installed in front of one of the two sensors. It acquires both hyperspectral and broad band high spatial resolution image data from one and the same camera.

  1. A depth-encoding PET detector that uses light sharing and single-ended readout with silicon photomultipliers.

    Science.gov (United States)

    Kuang, Zhonghua; Yang, Qian; Wang, Xiaohui; Fu, Xin; Ren, Ning; Sang, Ziru; Wu, San; Zheng, Yunfei; Zhang, Xianming; Hu, Zhanli; Du, Junwei; Liang, Dong; Liu, Xin; Zheng, Hairong; Yang, Yongfeng

    2018-02-13

    Detectors with depth-encoding capability and good timing resolution are required to develop high-performance whole-body or total-body PET scanners. In this work, depth-encoding PET detectors that use light sharing between two discrete crystals and single-ended readout with silicon photomultipliers (SiPMs) were manufactured and evaluated. The detectors consisted of two unpolished 3  ×  3  ×  20 mm 3 LYSO crystals with different coupling materials between them and were read out by Hamamatsu 3  ×  3 mm 2 SiPMs with one-to-one coupling. The ratio of the energy of one SiPM to the total energy of two SiPMs was used to measure the depth of interaction (DOI). Detectors with different coupling materials in-between the crystals were measured in the singles mode in an effort to obtain detectors that can provide good DOI resolution. The DOI resolution and energy resolution of three types of detector were measured and the timing resolution was measured for the detector with the best DOI and energy resolution. The optimum detector, with 5 mm optical glue, a 9 mm triangular ESR and a 6 mm rectangular ESR in-between the unpolished crystals, provides a DOI resolution of 2.65 mm, an energy resolution of 10.0% and a timing resolution of 427 ps for events of E  >  400 keV. The detectors simultaneously provide good DOI and timing resolution, and show great promise for the development of high-performance whole-body and total-body PET scanners.

  2. A depth-encoding PET detector that uses light sharing and single-ended readout with silicon photomultipliers

    Science.gov (United States)

    Kuang, Zhonghua; Yang, Qian; Wang, Xiaohui; Fu, Xin; Ren, Ning; Sang, Ziru; Wu, San; Zheng, Yunfei; Zhang, Xianming; Hu, Zhanli; Du, Junwei; Liang, Dong; Liu, Xin; Zheng, Hairong; Yang, Yongfeng

    2018-02-01

    Detectors with depth-encoding capability and good timing resolution are required to develop high-performance whole-body or total-body PET scanners. In this work, depth-encoding PET detectors that use light sharing between two discrete crystals and single-ended readout with silicon photomultipliers (SiPMs) were manufactured and evaluated. The detectors consisted of two unpolished 3  ×  3  ×  20 mm3 LYSO crystals with different coupling materials between them and were read out by Hamamatsu 3  ×  3 mm2 SiPMs with one-to-one coupling. The ratio of the energy of one SiPM to the total energy of two SiPMs was used to measure the depth of interaction (DOI). Detectors with different coupling materials in-between the crystals were measured in the singles mode in an effort to obtain detectors that can provide good DOI resolution. The DOI resolution and energy resolution of three types of detector were measured and the timing resolution was measured for the detector with the best DOI and energy resolution. The optimum detector, with 5 mm optical glue, a 9 mm triangular ESR and a 6 mm rectangular ESR in-between the unpolished crystals, provides a DOI resolution of 2.65 mm, an energy resolution of 10.0% and a timing resolution of 427 ps for events of E  >  400 keV. The detectors simultaneously provide good DOI and timing resolution, and show great promise for the development of high-performance whole-body and total-body PET scanners.

  3. Fabrication and Probabilistic Fracture Strength Prediction of High-Aspect-Ratio Single Crystal Silicon Carbide Microspecimens With Stress Concentration

    Science.gov (United States)

    Nemeth, Noel N.; Evans, Laura J.; Jadaan, Osama M.; Sharpe, William N., Jr.; Beheim, Glenn M.; Trapp, Mark A.

    2005-01-01

    Single crystal silicon carbide micro-sized tensile specimens were fabricated with deep reactive ion etching (DRIE) in order to investigate the effect of stress concentration on the room-temperature fracture strength. The fracture strength was defined as the level of stress at the highest stressed location in the structure at the instant of specimen rupture. Specimens with an elliptical hole, a circular hole, and without a hole (and hence with no stress concentration) were made. The average fracture strength of specimens with a higher stress concentration was larger than the average fracture strength of specimens with a lower stress concentration. Average strength of elliptical-hole, circular-hole, and without-hole specimens was 1.53, 1.26, and 0.66 GPa, respectively. Significant scatter in strength was observed with the Weibull modulus ranging between 2 and 6. No fractographic examination was performed but it was assumed that the strength controlling flaws originated from etching grooves along the specimen side-walls. The increase of observed fracture strength with increasing stress concentration was compared to predictions made with the Weibull stress-integral formulation by using the NASA CARES/Life code. In the analysis isotropic material and fracture behavior was assumed - hence it was not a completely rigorous analysis. However, even with these assumptions good correlation was achieved for the circular-hole specimen data when using the specimen data without stress concentration as a baseline. Strength was over predicted for the elliptical-hole specimen data. Significant specimen-to-specimen dimensional variation existed in the elliptical-hole specimens due to variations in the nickel mask used in the etching. To simulate the additional effect of the dimensional variability on the probabilistic strength response for the single crystal specimens the ANSYS Probabilistic Design System (PDS) was used with CARES/Life.

  4. Chip-based bioassay using bacterial sensor strains immobilized in three-dimensional microfluidic network.

    Science.gov (United States)

    Tani, Hirofumi; Maehana, Koji; Kamidate, Tamio

    2004-11-15

    A whole-cell bioassay has been performed using Escherichia coli sensor strains immobilized in a chip assembly, in which a silicon substrate is placed between two poly(dimethylsiloxane) (PDMS) substrates. Microchannels fabricated on the two separate PDMS layers are connected via perforated microwells on the silicon chip, and thus, a three-dimensional microfluidic network is constructed in the assembly. Bioluminescent sensor strains mixed with agarose are injected into the channels on one of the two PDMS layers and are immobilized in the microwells by gelation. Induction of the firefly luciferase gene expression in the sensor strains can be easily carried out by filling the channels on the other layer with sample solutions containing mutagen. Bioluminescence emissions from each well are detected after injection of luciferin/ATP mixtures into the channels. In this assay format using two multichannel layers and one microwell array chip, the interactions between various types of samples and strains can be monitored at each well on one assembly in a combinatorial fashion. Using several genotypes of the sensor strains or concentrations of mitomycin C in this format, the dependence of bioluminescence on these factors was obtained simultaneously in the single screening procedure. The present method could be a promising on-chip format for high-throughput whole-cell bioassays.

  5. Fabrication of poly(methyl methacrylate) microfluidic chips by atmospheric molding.

    Science.gov (United States)

    Muck, Alexander; Wang, Joseph; Jacobs, Michael; Chen, Gang; Chatrathi, Madhu Prakash; Jurka, Vlastimil; Výborný, Zdenek; Spillman, Scott D; Sridharan, Gautham; Schöning, Michael J

    2004-04-15

    A greatly simplified method for fabricating poly(methyl methacrylate) (PMMA) separation microchips is introduced. The new protocol relies on UV-initiated polymerization of the monomer solution in an open mold under ambient pressure. Silicon microstructures are transferred to the polymer substrate by molding a methyl methacrylate solution in a sandwich (silicon master/Teflon spacer/glass plate) mold. The chips are subsequently assembled by thermal sealing of the channel and cover plates. The new fabrication method obviates the need for specialized replication equipment and reduces the complexity of prototyping and manufacturing. Variables of the fabrication process were assessed and optimized. The new method compares favorably with common fabrication techniques, yielding high-quality devices with well-defined channel and injection-cross structures, and highly smoothed surfaces. Nearly 100 PMMA chips were replicated using a single silicon master, with high chip-to-chip reproducibility (relative standard deviations of 1.5 and 4.7% for the widths and depths of the replicated channels, respectively). The relatively high EOF value of the new chips (2.12 x 10(-4) cm(2) x V(-1) x s(-1)) indicates that the UV polymerization process increases the surface charge and hence enhances the fluidic transport. The attractive performance of the new CE microchips has been demonstrated in connection with end-column amperometric and contactless-conductivity detection schemes. While the new approach is demonstrated in connection with PMMA microchips, it could be applied to other materials that undergo light-initiated polymerization. The new approach brings significant simplification of the process of fabricating PMMA devices and should lead to a widespread low-cost production of high-quality separation microchips.

  6. Surface enhanced raman spectroscopy on chip

    DEFF Research Database (Denmark)

    Hübner, Jörg; Anhøj, Thomas Aarøe; Zauner, Dan

    2007-01-01

    In this paper we report low resolution surface enhanced Raman spectra (SERS) conducted with a chip based spectrometer. The flat field spectrometer presented here is fabricated in SU-8 on silicon, showing a resolution of around 3 nm and a free spectral range of around 100 nm. The output facet...... fiber. The obtained spectra show that chip based spectrometer together with the SERS active surface can be used as Raman sensor....

  7. On-site detection of Phytophthora spp.—single-stranded target DNA as the limiting factor to improve on-chip hybridization

    International Nuclear Information System (INIS)

    Schwenkbier, Lydia; Pollok, Sibyll; Popp, Jürgen; Weber, Karina; König, Stephan; Wagner, Stefan; Werres, Sabine; Weber, Jörg; Hentschel, Martin

    2014-01-01

    We report on a lab-on-a-chip approach for on-site detection of Phytophthora species that allows visual signal readout. The results demonstrate the significance of single-stranded DNA (ssDNA) generation in terms of improving the intensity of the hybridization signal and to improve the reliability of the method. Conventional PCR with subsequent heat denaturation, sodium hydroxide-based denaturation, lambda exonuclease digestion and two asymmetric PCR methods were investigated for the species P. fragariae, P. kernoviae, and P. ramorum. The positioning of the capture probe within the amplified yeast GTP-binding protein (YPT1) target DNA was also of interest because it significantly influences the intensity of the signal. Statistical tests were used to validate the impact of the ssDNA generation methods and the capture-target probe position. The single-stranded target DNA generated by Linear-After-The-Exponential PCR (LATE-PCR) was found to produce signal intensities comparable to post-PCR exonuclease treatment. The LATE-PCR is the best method for the on-site detection of Phytophthora because the enzymatic digestion after PCR is more laborious and time-consuming. (author)

  8. Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source.

    Science.gov (United States)

    Steidle, Jeffrey A; Fanto, Michael L; Preble, Stefan F; Tison, Christopher C; Howland, Gregory A; Wang, Zihao; Alsing, Paul M

    2017-04-04

    Silicon photonic chips have the potential to realize complex integrated quantum information processing circuits, including photon sources, qubit manipulation, and integrated single-photon detectors. Here, we present the key aspects of preparing and testing a silicon photonic quantum chip with an integrated photon source and two-photon interferometer. The most important aspect of an integrated quantum circuit is minimizing loss so that all of the generated photons are detected with the highest possible fidelity. Here, we describe how to perform low-loss edge coupling by using an ultra-high numerical aperture fiber to closely match the mode of the silicon waveguides. By using an optimized fusion splicing recipe, the UHNA fiber is seamlessly interfaced with a standard single-mode fiber. This low-loss coupling allows the measurement of high-fidelity photon production in an integrated silicon ring resonator and the subsequent two-photon interference of the produced photons in a closely integrated Mach-Zehnder interferometer. This paper describes the essential procedures for the preparation and characterization of high-performance and scalable silicon quantum photonic circuits.

  9. Towards Silicon-Based Longwave Integrated Optoelectronics (LIO)

    Science.gov (United States)

    2008-01-21

    complex longwave functions performed by the on-chip network, (6) adaptable sensing using intelligent electronics, (7) inexpensive Foundry integration...PD1 PD2 Tunable laser diode gas everywhere on serpent Silicon LIO chip Ge/Si ref rence waveguide (no slot) Slotted serpentine Ge/Si waveguide μB1...everywhere on serpent CMOS electronics Silicon LIO chip Ge/Si reference waveguide (no slot) Slotted Ge/Si waveguide

  10. On-chip mode division multiplexing technologies

    DEFF Research Database (Denmark)

    Ding, Yunhong; Frellsen, Louise Floor; Guan, Xiaowei

    2016-01-01

    Space division multiplexing (SDM) is currently widely investigated in order to provide enhanced capacity thanks to the utilization of space as a new degree of multiplexing freedom in both optical fiber communication and on-chip interconnects. Basic components allowing the processing of spatial...... using one-dimensional (1D) photonic crystal silicon waveguides. We furthermore use the fabricated devices to demonstrate on-chip point-to-point mode division multiplexing transmission, and all-optical signal processing by mode-selective wavelength conversion. Finally, we report an efficient silicon...

  11. Signal processing for on-chip space division multiplexing

    DEFF Research Database (Denmark)

    Peucheret, Christophe; Ding, Yunhong; Xu, Jing

    2015-01-01

    Our recent results on the demonstration of on-chip mode-division multiplexing are reviewed, with special emphasis on nonlinear all-optical signal processing. Mode-selective parametric processes are demonstrated in a silicon-on-insulator waveguide.......Our recent results on the demonstration of on-chip mode-division multiplexing are reviewed, with special emphasis on nonlinear all-optical signal processing. Mode-selective parametric processes are demonstrated in a silicon-on-insulator waveguide....

  12. Impedance spectra of patch clamp scenarios for single cells immobilized on a lab-on-a-chip

    DEFF Research Database (Denmark)

    Alberti, Massimo; Snakenborg, Detlef; Lopacinska, Joanna M.

    2014-01-01

    A simple method based on impedance spectroscopy (IS) was developed to distinguish between different patch clamp modes for single cells trapped on microapertures in a patch clamp microchannel array designed for patch clamping on cultured cells. The method allows detecting via impedance analysis wh...

  13. Effect of radiation-induced lattice defects in silicon single crystals on the characteristic states of an intersticial muonium atom

    International Nuclear Information System (INIS)

    Barsov, S.G.; Getalov, A.L.; Gordeev, V.A.

    1983-01-01

    It is observed experimentally that radiation defects affect normal and anomalous muonium in silicon differently. It is shown that the mobilities of these two states of muonium in the lattice of the specimen differ considerably

  14. Simulation of Single Particle Displacement Damage in Silicon – Part II: Generation and Long-Time Relaxation of Damage Structure

    OpenAIRE

    Jay , Antoine; Raine , Melanie; Richard , Nicolas; Mousseau , Normand; Goiffon , Vincent; Hémeryck , Anne; Magnan , Pierre

    2017-01-01

    International audience; A statistical study of displacement cascades induced by silicon Primary Knock-on Atoms (PKA) in bulk silicon is performed by running a large number of molecular dynamics (MD) simulations. The choice of the PKA species and energy varying from 1 to 100 keV comes from a previous particle-matter simulation [1]. The electronic stopping power missing in standard MD simulations is here taken into account using the Two Temperature Model (TTM). This prevents from overestimating...

  15. Quantum Optomechanics with Silicon Nanostructures

    Science.gov (United States)

    Safavi-Naeini, Amir H.

    Mechanical resonators are the most basic and ubiquitous physical systems known. In on-chip form, they are used to process high frequency signals in every cell phone, television, and laptop. They have also been in the last few decades in different shapes and forms, a critical part of progress in quantum information sciences with kilogram scale mirrors for gravitational wave detection measuring motion at its quantum limits, and the motion of single ions being used to link qubits for quantum computation. Optomechanics is a field primarily concerned with coupling light to the motion of mechanical structures. This thesis contains descriptions of recent work with mechanical systems in the megahertz to gigahertz frequency range, formed by nanofabricating novel photonic/phononic structures on a silicon chip. These structures are designed to have both optical and mechanical resonances, and laser light is used to address and manipulate their motional degrees of freedom through radiation pressure forces. We laser cool these mechanical resonators to their ground states, and observe for the first time the quantum zero-point motion of a nanomechanical resonator. Conversely, we show that engineered mechanical resonances drastically modify the optical response of our structures, creating large effective optical nonlinearities not present in bulk silicon. We experimentally demonstrate aspects of these nonlinearities by proposing and observing ``electromagnetically induced transparency'' and light slowed down to 6 m/s, as well as wavelength conversion, and generation of nonclassical optical radiation. Finally, the application of optomechanics to longstanding problems in quantum and classical communications are proposed and investigated.

  16. Design of silicon-based fractal antennas

    KAUST Repository

    Ghaffar, Farhan A.

    2012-11-20

    This article presents Sierpinski carpet fractal antennas implemented in conventional low resistivity (Ï =10 Ω cm) as well as high resistivity (Ï =1500 Ω cm) silicon mediums. The fractal antenna is 36% smaller as compared with a typical patch antenna at 24 GHz and provides 13% bandwidth on high resistivity silicon, suitable for high data rate applications. For the first time, an on-chip fractal antenna array is demonstrated in this work which provides double the gain of a single fractal element as well as enhanced bandwidth. A custom test fixture is utilized to measure the radiation pattern and gain of these probe-fed antennas. In addition to gain and impedance characterization, measurements have also been made to study intrachip communication through these antennas. The comparison between the low resistivity and high resistivity antennas indicate that the former is not a suitable medium for array implementation and is only suitable for short range communication whereas the latter is appropriate for short and medium range wireless communication. The design is well-suited for compact, high data rate System-on-Chip (SoC) applications as well as for intrachip communication such as wireless global clock distribution in synchronous systems. © 2012 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:180-186, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27245 Copyright © 2012 Wiley Periodicals, Inc.

  17. Development of a driving method suitable for ultrahigh-speed shooting in a 2M-fps 300k-pixel single-chip color camera

    Science.gov (United States)

    Yonai, J.; Arai, T.; Hayashida, T.; Ohtake, H.; Namiki, J.; Yoshida, T.; Etoh, T. Goji

    2012-03-01

    We have developed an ultrahigh-speed CCD camera that can capture instantaneous phenomena not visible to the human eye and impossible to capture with a regular video camera. The ultrahigh-speed CCD was specially constructed so that the CCD memory between the photodiode and the vertical transfer path of each pixel can store 144 frames each. For every one-frame shot, the electric charges generated from the photodiodes are transferred in one step to the memory of all the parallel pixels, making ultrahigh-speed shooting possible. Earlier, we experimentally manufactured a 1M-fps ultrahigh-speed camera and tested it for broadcasting applications. Through those tests, we learned that there are cases that require shooting speeds (frame rate) of more than 1M fps; hence we aimed to develop a new ultrahigh-speed camera that will enable much faster shooting speeds than what is currently possible. Since shooting at speeds of more than 200,000 fps results in decreased image quality and abrupt heating of the image sensor and drive circuit board, faster speeds cannot be achieved merely by increasing the drive frequency. We therefore had to improve the image sensor wiring layout and the driving method to develop a new 2M-fps, 300k-pixel ultrahigh-speed single-chip color camera for broadcasting purposes.

  18. Multi-quantum spin resonances of intrinsic defects in silicon carbide

    International Nuclear Information System (INIS)

    Georgy Astakhov

    2014-01-01

    We report the observation of multi-quantum microwave absorption and emission, induced by the optical excitation of silicon vacancy related defects in silicon carbide (SiC). In particular, we observed two-quantum transitions from +3/2 to -1/2 and from -3/2 to +1/2 spin sublevels, unambiguously indicating the spin S = 3/2 ground state. Our findings may have implications for a broad range of quantum applications. On one hand, a single silicon vacancy defect is a potential source of indistinguishable microwave photon pairs due to the two-quantum emission process. On the other hand, the two-quantum absorption can be used generate a population inversion, which is a prerequisite to fabricate solid-state maser and quantum microwave amplifier. This opens a new platform cavity quantum electrodynamics experiments and quantum information processing on a single chip. (author)

  19. Effectiveness of the custom-mold room temperature vulcanizing silicone toe separator on hallux valgus: A prospective, randomized single-blinded controlled trial.

    Science.gov (United States)

    Chadchavalpanichaya, Navaporn; Prakotmongkol, Voraluck; Polhan, Nattapong; Rayothee, Pitchaya; Seng-Iad, Sirirat

    2018-04-01

    Silicone toe separator is considered as a conservative treatment for hallux valgus. The prefabricated toe separator does not fit all. However, effectiveness in prescription of the custom-mold toe separator is still unknown. To investigate the effect of using a custom-mold room temperature vulcanizing silicone toe separator to decrease hallux valgus angle and hallux pain. The compliances, complications, and satisfactions of toe separator were also explored. A prospective, randomized single-blinded controlled trial. A total of 90 patients with a moderate degree of hallux valgus were enrolled in a study at the Foot Clinic, Siriraj Hospital, Thailand. Patients were randomized into two groups; the study group was prescribed a custom-mold room temperature vulcanizing silicone toe separator for 6 h per night for 12 months. Patients in both groups received proper foot care and shoes and were permitted to continue drug treatment. In total, 40 patients in the study group and 39 patients in the control group completed the study. The hallux valgus angle was obtained through radiographic measurement. At month 12, both groups had significant differences in mean hallux valgus angle with a decrease of 3.3° ± 2.4° for the study group and increase of 1.9° ± 1.9° for the control group. There were statistically significant differences of hallux valgus angle between the two groups ( p Hallux pain was decreased in the study group. A custom-mold room temperature vulcanizing silicone toe separator can decrease hallux valgus angle and pain with no serious complications. Clinical relevance The custom-mold room temperature vulcanizing silicone toe separator for treatment of hallux valgus reduces deformity and hallux pain.

  20. On-chip genotoxic bioassay based on bioluminescence reporter system using three-dimensional microfluidic network

    OpenAIRE

    Maehana, Koji; Tani, Hirofumi; Kamidate, Tamio

    2006-01-01

    Microchip-based genotoxic bioassay using sensing Escherichia coli strains has been performed. In this method, the assay was conducted in three-dimensional microfluidic network constructed by a silicon perforated microwell array chip and two poly(dimethylsiloxane) (PDMS) multi-microchannel chips. The sensing strains having firefly luciferase reporter gene under transcriptional control of umuD as an SOS promoter were put into the channels on one of the PDMS chips and immobilized in the silicon ...

  1. Transformational silicon electronics

    KAUST Repository

    Rojas, Jhonathan Prieto

    2014-02-25

    In today\\'s traditional electronics such as in computers or in mobile phones, billions of high-performance, ultra-low-power devices are neatly integrated in extremely compact areas on rigid and brittle but low-cost bulk monocrystalline silicon (100) wafers. Ninety percent of global electronics are made up of silicon. Therefore, we have developed a generic low-cost regenerative batch fabrication process to transform such wafers full of devices into thin (5 μm), mechanically flexible, optically semitransparent silicon fabric with devices, then recycling the remaining wafer to generate multiple silicon fabric with chips and devices, ensuring low-cost and optimal utilization of the whole substrate. We show monocrystalline, amorphous, and polycrystalline silicon and silicon dioxide fabric, all from low-cost bulk silicon (100) wafers with the semiconductor industry\\'s most advanced high-κ/metal gate stack based high-performance, ultra-low-power capacitors, field effect transistors, energy harvesters, and storage to emphasize the effectiveness and versatility of this process to transform traditional electronics into flexible and semitransparent ones for multipurpose applications. © 2014 American Chemical Society.

  2. Toward a single-chip TECless/NUCless InGaAs SWIR camera with 120-dB intrinsic operation dynamic range

    Science.gov (United States)

    Ni, Y.; Arion, B.; Zhu, Y. M.; Potet, P.; Huet, Odile; Reverchon, Jean Luc; Truffer, Jean Patrick; Robo, Jean Alexandre; Costard, Eric

    2011-06-01

    This paper describes a single-chip InGaAs SWIR camera with more than 120dB instant operational dynamic range with an innovative CMOS ROIC technology, so called MAGIC, invented and patented by New Imaging Technologies. A 320x256- pixel InGaAs 25μm pitch photodiode array, designed and fabricated by III-Vlab/Thales Research & Technology(TRT), has been hybridized on this new generation CMOS ROIC. With NIT's MAGIC technology, the sensor's output follows a precise logarithmic law in function of incoming photon flux and gives instant operational dynamic range (DR) better than 120 dB. The ROIC incorporates the entire video signal processing function including a CCIR TV encoder, so a complete SWIR InGaAs camera with standard video output has been realized on a single 30x30 mm2 PCB board with ¼ W power consumption. Neither TEC nor NUC is needed from room temperature operation. The camera can be switched on and off instantly, ideal for all the portable battery operated SWIR band observation applications. The measured RMS noise and FPN noise on the prototype sensor in dark conditions are 0.4 mV and 0.27 mV respectively. The signal excursion from pixel is about 300mV over the 120 dB dynamic range. The FPN remains almost constant over the whole operation dynamic range. The NEI has been measured to be 3,71E+09 ph/s/cm2 with 92 equivalent noise photons at 25Hz frame rate, better than the same architecture of InGaAs photodiode array hybridized on an Indigo ROIC ISC9809 with a pitch of 30 μm for which a readout noise of 120 electrons is observed.

  3. Cytometer on a Chip

    Science.gov (United States)

    Fernandez, Salvador M.

    2011-01-01

    A cytometer now under development exploits spatial sorting of sampled cells on a microarray chip followed by use of grating-coupled surface-plasmon-resonance imaging (GCSPRI) to detect the sorted cells. This cytometer on a chip is a prototype of contemplated future miniature cytometers that would be suitable for rapidly identifying pathogens and other cells of interest in both field and laboratory applications and that would be attractive as alternatives to conventional flow cytometers. The basic principle of operation of a conventional flow cytometer requires fluorescent labeling of sampled cells, stringent optical alignment of a laser beam with a narrow orifice, and flow of the cells through the orifice, which is subject to clogging. In contrast, the principle of operation of the present cytometer on a chip does not require fluorescent labeling of cells, stringent optical alignment, or flow through a narrow orifice. The basic principle of operation of the cytometer on a chip also reduces the complexity, mass, and power of the associated laser and detection systems, relative to those needed in conventional flow cytometry. Instead of making cells flow in single file through a narrow flow orifice for sequential interrogation as in conventional flow cytometry, a liquid containing suspended sampled cells is made to flow over the front surface of a microarray chip on which there are many capture spots. Each capture spot is coated with a thin (approximately 50-nm) layer of gold that is, in turn, coated with antibodies that bind to cell-surface molecules characteristic of one the cell species of interest. The multiplicity of capture spots makes it possible to perform rapid, massively parallel analysis of a large cell population. The binding of cells to each capture spot gives rise to a minute change in the index of refraction at the surface of the chip. This change in the index of refraction is what is sensed in GCSPRI, as described briefly below. The identities of the

  4. Wireless Interconnects for Intra-chip & Inter-chip Transmission

    Science.gov (United States)

    Narde, Rounak Singh

    With the emergence of Internet of Things and information revolution, the demand of high performance computing systems is increasing. The copper interconnects inside the computing chips have evolved into a sophisticated network of interconnects known as Network on Chip (NoC) comprising of routers, switches, repeaters, just like computer networks. When network on chip is implemented on a large scale like in Multicore Multichip (MCMC) systems for High Performance Computing (HPC) systems, length of interconnects increases and so are the problems like power dissipation, interconnect delays, clock synchronization and electrical noise. In this thesis, wireless interconnects are chosen as the substitute for wired copper interconnects. Wireless interconnects offer easy integration with CMOS fabrication and chip packaging. Using wireless interconnects working at unlicensed mm-wave band (57-64GHz), high data rate of Gbps can be achieved. This thesis presents study of transmission between zigzag antennas as wireless interconnects for Multichip multicores (MCMC) systems and 3D IC. For MCMC systems, a four-chips 16-cores model is analyzed with only four wireless interconnects in three configurations with different antenna orientations and locations. Return loss and transmission coefficients are simulated in ANSYS HFSS. Moreover, wireless interconnects are designed, fabricated and tested on a 6'' silicon wafer with resistivity of 55O-cm using a basic standard CMOS process. Wireless interconnect are designed to work at 30GHz using ANSYS HFSS. The fabricated antennas are resonating around 20GHz with a return loss of less than -10dB. The transmission coefficients between antenna pair within a 20mm x 20mm silicon die is found to be varying between -45dB to -55dB. Furthermore, wireless interconnect approach is extended for 3D IC. Wireless interconnects are implemented as zigzag antenna. This thesis extends the work of analyzing the wireless interconnects in 3D IC with different

  5. Scanning Probe Microscopy for Atomic-scale Silicon Device Fabrication

    Science.gov (United States)

    Simmons, Michelle

    2005-03-01

    Over the past three decades the driving force behind the expansion of the microelectronics industry has been the ability to pack ever more features onto a silicon chip, achieved by continually miniaturising the size of the individual components. However, after 2015 there is no known technological route to reduce device sizes below 10nm. In this talk we demonstrate a complete fabrication strategy towards atomic-scale device fabrication in silicon using a combination of scanning tunneling microscopy and high purity crystal growth. In particular we overcome one of the major obstacles to making functional semiconductor devices with an STM -- connecting macroscopic leads to the device once it is removed from the vacuum environment [1]. We demonstrate key steps of the fabrication process, including the ability to place individual phosphorus atoms in silicon at precise locations [2] and encapsulate them in epitaxial silicon with minimal diffusion and segregation of the dopants [3]. We present magnetoresistance data showing the cross-over from 2D to 1D transport in nano-scale quantum wires and arrays. Finally we discuss the implications of these results for the construction of more sophisticated atomic-scale devices in silicon such as a silicon based quantum computer. [1] F.J. Ruess, L. Oberbeck, M.Y. Simmons, K.E.J. Goh, A.R. Hamilton, T. Hallam, N.J. Curson and R.G. Clark, ``Fabrication of quantum wires using scanning probe microscopy'', Nano Letters 4, 1969 (2004). [2] S. R. Schofield, N. J. Curson, M. Y. Simmons, F. J. Ruess, T. Hallam, L. Oberbeck and R. G.Clark, ``Atomically precise placement of single dopants in silicon'', Physical Review Letters 91, 136104 (2003). [3] L. Oberbeck, N. J. Curson, T. Hallam, M. Y. Simmons and R.G. Clark, ``Measurement of phosphorus segregation in silicon at the atomic-scale using scanning tunneling microscopy'', Appl. Phys. Lett. 83, 1359 (2004).

  6. An Electrochromatography Chip with Integrated Waveguides for UV Absorbance Detection

    DEFF Research Database (Denmark)

    Gustafsson, Omar; Mogensen, Klaus Bo; Ohlsson, Pelle Daniel

    2008-01-01

    A silicon-based microchip for electrochromatographic separations is presented. Apart from a microfluidic network, the microchip has integrated UV-transparent waveguides for detection and integrated couplers for optical fibers on the chip, yielding the most complete chromatography microchip to date...... of an octylsilane covalently bonded to the surfaces to provide chromatographic interaction. The chip features a 1 mm long U-shaped detection cell and planar silicon dioxide waveguides that couple light to and from the detection cell. Microfabricated on-chip fiber couplers assure perfect alignment of optical fibers...

  7. DNA analysis by single molecule stretching in nanofluidic biochips

    DEFF Research Database (Denmark)

    Abad, E.; Juarros, A.; Retolaza, A.

    2011-01-01

    Stretching single DNA molecules by confinement in nanofluidic channels has attracted a great interest during the last few years as a DNA analysis tool. We have designed and fabricated a sealed micro/nanofluidic device for DNA stretching applications, based on the use of the high throughput Nano......Imprint Lithography (NIL) technology combined with a conventional anodic bonding of the silicon base and Pyrex cover. Using this chip, we have performed single molecule imaging on a bench-top fluorescent microscope system. Lambda phage DNA was used as a model sample to characterize the chip. Single molecules of λ...... a method to determining DNA size. The results of this work prove that the developed fabrication process is a good alternative for the fabrication of single molecule DNA biochips and it allows developing a variety of innovative bio/chemical sensors based on single-molecule DNA sequencing devices....

  8. Electric field reduced charging energies and two-electron bound excited states of single donors in silicon

    NARCIS (Netherlands)

    Rahman, R.; Lansbergen, G.P.; Verduijn, J.; Tettamanzi, G.C.; Park, S.H.; Collaert, N.; Biesemans, S.; Klimeck, G.; Hollenberg, L.C.L.; Rogge, S.

    2011-01-01

    We present atomistic simulations of the D0 to D? charging energies of a gated donor in silicon as a function of applied fields and donor depths and find good agreement with experimental measurements. A self-consistent field large-scale tight-binding method is used to compute the D? binding energies

  9. Micro-morphology of single crystalline silicon surfaces during anisotropic wet chemical etching in KOH: velocity source forests

    NARCIS (Netherlands)

    van Veenendaal, E.; Sato, K.; Shikida, M.; Shikida, M.; Nijdam, A.J.; van Suchtelen, J.

    2001-01-01

    For silicon etched in KOH the micro-morphology of any surface, no matter the crystallographic orientation, is defined by some sort of persistent corrugations. As a matter of principle, the occurrence of these corrugations is incompatible with the classical kinematic wave theory for the evolution of

  10. A New Analytical Subthreshold Behavior Model for Single-Halo, Dual-Material Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

    Science.gov (United States)

    Chiang, Te-Kuang

    2008-11-01

    On the basis of the exact solution of the two-dimensional Poisson equation, a new analytical subthreshold behavior model consisting of the two-dimensional potential, threshold voltage, and subthreshold current for the single-halo, dual-material gate (SHDMG) silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) is developed. The model is verified by the good agreement with a numerical simulation using the device simulator MEDICI. The model not only offers a physical insight into device physics but is also an efficient device model for the circuit simulation.

  11. Narrow band wavelength selective filter using grating assisted single ring resonator

    Energy Technology Data Exchange (ETDEWEB)

    Prabhathan, P., E-mail: PPrabhathan@ntu.edu.sg; Murukeshan, V. M. [Centre for Optical and Laser Engineering (COLE), School of Mechanical and Aerospace Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 (Singapore)

    2014-09-15

    This paper illustrates a filter configuration which uses a single ring resonator of larger radius connected to a grating resonator at its drop port to achieve single wavelength selectivity and switching property with spectral features suitable for on-chip wavelength selection applications. The proposed configuration is expected to find applications in silicon photonics devices such as, on-chip external cavity lasers and multi analytic label-free biosensors. The grating resonator has been designed for a high Q-factor, high transmittivity, and minimum loss so that the wavelength selectivity of the device is improved. The proof-of-concept device has been demonstrated on a Silicon-on-Insulator (SOI) platform through electron beam lithography and Reactive Ion Etching (RIE) process. The transmission spectrum shows narrow band single wavelength selection and switching property with a high Free Spectral Range (FSR) ∼60 nm and side band rejection ratio >15 dB.

  12. A chip-scale, telecommunications-band frequency conversion interface for quantum emitters.

    Science.gov (United States)

    Agha, Imad; Ates, Serkan; Davanço, Marcelo; Srinivasan, Kartik

    2013-09-09

    We describe a chip-scale, telecommunications-band frequency conversion interface designed for low-noise operation at wavelengths desirable for common single photon emitters. Four-wave-mixing Bragg scattering in silicon nitride waveguides is used to demonstrate frequency upconversion and downconversion between the 980 nm and 1550 nm wavelength regions, with signal-to-background levels > 10 and conversion efficiency of ≈ -60 dB at low continuous wave input pump powers ( 25 % in existing geometries. Finally, we present waveguide designs that can be used to connect shorter wavelength (637 nm to 852 nm) quantum emitters with 1550 nm.

  13. Performance of the CLAS12 Silicon Vertex Tracker modules

    Energy Technology Data Exchange (ETDEWEB)

    Antonioli, Mary Ann [JLAB; Boiarinov, Serguie; Bonneau, Peter R. [JLAB; Elouadrhiri, Latifa [JLAB; Eng, Brian J. [JLAB; Gotra, Yuri N. [JLAB; Kurbatov, Evgeny O. [Moscow State U.; Leffel, Mindy A. [JLAB; Mandal, Saptarshi [JLAB; McMullen, Marc E. [JLAB; Merkin, Mikhail M. [Moscow State U.; Raydo, Benjamin J. [JLAB; Teachey, Robert W, [JLAB; Tucker, Ross J. [Arizona State U.; Ungaro, Maurizio [JLAB; Yegneswaran, Amrit S. [JLAB; Ziegler, Veronique [JLAB

    2013-12-01

    For the 12 GeV upgrade, the CLAS12 experiment has designed a Silicon Vertex Tracker (SVT) using single sided microstrip sensors fabricated by Hamamatsu. The sensors have graded angle design to minimize dead areas and a readout pitch of 156{micro}m, with intermediate strip. Double sided SVT module hosts three daisy-chained sensors on each side with a full strip length of 33 cm. There are 512 channels per module read out by four Fermilab Silicon Strip Readout (FSSR2) chips featuring data driven architecture, mounted on a rigid-flex hybrid. Modules are assembled on the barrel using unique cantilevered geometry to minimize the amount of material in the tracking volume. Design and performance of the SVT modules are presented, focusing on results of electrical measurements.

  14. 3D printed high density, reversible, chip-to-chip microfluidic interconnects.

    Science.gov (United States)

    Gong, Hua; Woolley, Adam T; Nordin, Gregory P

    2018-02-13

    Our latest developments in miniaturizing 3D printed microfluidics [Gong et al., Lab Chip, 2016, 16, 2450; Gong et al., Lab Chip, 2017, 17, 2899] offer the opportunity to fabricate highly integrated chips that measure only a few mm on a side. For such small chips, an interconnection method is needed to provide the necessary world-to-chip reagent and pneumatic connections. In this paper, we introduce simple integrated microgaskets (SIMs) and controlled-compression integrated microgaskets (CCIMs) to connect a small device chip to a larger interface chip that implements world-to-chip connections. SIMs or CCIMs are directly 3D printed as part of the device chip, and therefore no additional materials or components are required to make the connection to the larger 3D printed interface chip. We demonstrate 121 chip-to-chip interconnections in an 11 × 11 array for both SIMs and CCIMs with an areal density of 53 interconnections per mm 2 and show that they withstand fluid pressures of 50 psi. We further demonstrate their reusability by testing the devices 100 times without seal failure. Scaling experiments show that 20 × 20 interconnection arrays are feasible and that the CCIM areal density can be increased to 88 interconnections per mm 2 . We then show the utility of spatially distributed discrete CCIMs by using an interconnection chip with 28 chip-to-world interconnects to test 45 3D printed valves in a 9 × 5 array. Each valve is only 300 μm in diameter (the smallest yet reported for 3D printed valves). Every row of 5 valves is tested to at least 10 000 actuations, with one row tested to 1 000 000 actuations. In all cases, there is no sign of valve failure, and the CCIM interconnections prove an effective means of using a single interface chip to test a series of valve array chips.

  15. DNA Chip

    Indian Academy of Sciences (India)

    Imagine a world without identity cards; no I-cards for the college or office or bank account or anything! All you are carrying is a small (say, 2cm x 2cm) 'DNA-chip', which has the whole of your genetic profile on it. Your identity cannot get more authentic than that. Imagine a world where marriages are not decided by matching ...

  16. Silicone metalization

    Energy Technology Data Exchange (ETDEWEB)

    Maghribi, Mariam N. (Livermore, CA); Krulevitch, Peter (Pleasanton, CA); Hamilton, Julie (Tracy, CA)

    2008-12-09

    A system for providing metal features on silicone comprising providing a silicone layer on a matrix and providing a metal layer on the silicone layer. An electronic apparatus can be produced by the system. The electronic apparatus comprises a silicone body and metal features on the silicone body that provide an electronic device.

  17. The LHCb Silicon Tracker Project

    Energy Technology Data Exchange (ETDEWEB)

    Agari, M. [Max Planck Institute for Nuclear Physics (Germany); Bauer, C. [Max Planck Institute for Nuclear Physics (Germany); Baumeister, D. [Max Planck Institute for Nuclear Physics (Germany); Blouw, J. [Max Planck Institute for Nuclear Physics (Germany)]. E-mail: Johan.Blouw@mpi-hd.mpg.de; Hofmann, W. [Max Planck Institute for Nuclear Physics (Germany); Knoepfle, K.T. [Max Planck Institute for Nuclear Physics (Germany); Loechner, S. [Max Planck Institute for Nuclear Physics (Germany); Schmelling, M. [Max Planck Institute for Nuclear Physics (Germany); Pugatch, V. [Kiev Institute for Nuclear Research (Ukraine); Bay, A. [Laboratoire de Physique des Hautes Energies, Ecole Polytechnique de Lausanne (France); Carron, B. [Laboratoire de Physique des Hautes Energies, Ecole Polytechnique de Lausanne (France); Frei, R. [Laboratoire de Physique des Hautes Energies, Ecole Polytechnique de Lausanne (France); Jiminez-Otero, S. [Laboratoire de Physique des Hautes Energies, Ecole Polytechnique de Lausanne (France); Tran, M.-T. [Laboratoire de Physique des Hautes Energies, Ecole Polytechnique de Lausanne (France); Voss, H. [Laboratoire de Physique des Hautes Energies, Ecole Polytechnique de Lausanne (France); Adeva, B. [Universidad de Santiago de Compostela (Spain); Esperante, D. [Universidad de Santiago de Compostela (Spain); Lois, C. [Universidad de Santiago de Compostela (Spain); Vasquez, P. [Universidad de Santiago de Compostela (Spain); Bernhard, R.P. [Physik-Insitut Universitaet Zuerich (Switzerland); Bernet, R. [Physik-Insitut Universitaet Zuerich (Switzerland); Ermoline, Y. [Physik-Insitut Universitaet Zuerich (Switzerland); Gassner, J. [Physik-Insitut Universitaet Zuerich (Switzerland); Koestner, S. [Physik-Insitut Universitaet Zuerich (Switzerland); Lehner, F.; Needham, M.; Siegler, M.; Steinkamp, O.; Straumann, U.; Vollhardt, A.; Volyanskyy, D. [Physik-Insitut Universitaet Zuerich (Switzerland)

    2006-01-15

    Two silicon strip detectors, the Trigger Tracker(TT) and the Inner Tracker(Italy) will be constructed for the LHCb experiment. Transverse momentum information extracted from the TT will be used in the Level 1 trigger. The IT is part of the main tracking system behind the magnet. Both silicon detectors will be read out using a custom-developed chip by the ASIC lab in Heidelberg. The signal-over-noise behavior and performance of various geometrical designs of the silicon sensors, in conjunction with the Beetle read-out chip, have been extensively studied in test beam experiments. Results from those experiments are presented, and have been used in the final choice of sensor geometry.

  18. The LHCb Silicon Tracker Project

    International Nuclear Information System (INIS)

    Agari, M.; Bauer, C.; Baumeister, D.; Blouw, J.; Hofmann, W.; Knoepfle, K.T.; Loechner, S.; Schmelling, M.; Pugatch, V.; Bay, A.; Carron, B.; Frei, R.; Jiminez-Otero, S.; Tran, M.-T.; Voss, H.; Adeva, B.; Esperante, D.; Lois, C.; Vasquez, P.; Bernhard, R.P.; Bernet, R.; Ermoline, Y.; Gassner, J.; Koestner, S.; Lehner, F.; Needham, M.; Siegler, M.; Steinkamp, O.; Straumann, U.; Vollhardt, A.; Volyanskyy, D.

    2006-01-01

    Two silicon strip detectors, the Trigger Tracker(TT) and the Inner Tracker(Italy) will be constructed for the LHCb experiment. Transverse momentum information extracted from the TT will be used in the Level 1 trigger. The IT is part of the main tracking system behind the magnet. Both silicon detectors will be read out using a custom-developed chip by the ASIC lab in Heidelberg. The signal-over-noise behavior and performance of various geometrical designs of the silicon sensors, in conjunction with the Beetle read-out chip, have been extensively studied in test beam experiments. Results from those experiments are presented, and have been used in the final choice of sensor geometry

  19. The LHCb silicon tracker project

    CERN Document Server

    Blouw, J

    2004-01-01

    Two silicon strip detectors, the Trigger Tracker(TT) and the Inner Tracker(IT) will be constructed for the LHCb experiment. Transverse momentum information extracted from the TT will be used in the Level 1 trigger. The IT is part of the main tracking system behind the magnet. Both silicon detectors will be read out using a custom-developed chip by the ASIC lab in Heidelberg. The signal-over-noise behavior and performance of various geometrical designs of the silicon sensors, in conjunction with the Beetle read-out chip, have been extensively studied in test beam experiments. Results from those experiments are presented, and have been used in the final choice of sensor geometry.

  20. High-Q energy trapping of temperature-stable shear waves with Lamé cross-sectional polarization in a single crystal silicon waveguide

    Science.gov (United States)

    Tabrizian, R.; Daruwalla, A.; Ayazi, F.

    2016-03-01

    A multi-port electrostatically driven silicon acoustic cavity is implemented that efficiently traps the energy of a temperature-stable eigen-mode with Lamé cross-sectional polarization. Dispersive behavior of propagating and evanescent guided waves in a ⟨100⟩-aligned single crystal silicon waveguide is used to engineer the acoustic energy distribution of a specific shear eigen-mode that is well known for its low temperature sensitivity when implemented in doped single crystal silicon. Such an acoustic energy trapping in the central region of the acoustic cavity geometry and far from substrate obviates the need for narrow tethers that are conventionally used for non-destructive and high quality factor (Q) energy suspension in MEMS resonators; therefore, the acoustically engineered waveguide can simultaneously serve as in-situ self-oven by passing large uniformly distributed DC currents through its body and without any concern about perturbing the mode shape or deforming narrow supports. Such a stable thermo-structural performance besides large turnover temperatures than can be realized in Lamé eigen-modes make this device suitable for implementation of ultra-stable oven-controlled oscillators. 78 MHz prototypes implemented in arsenic-doped single crystal silicon substrates with different resistivity are transduced by in- and out-of-plane narrow-gap capacitive ports, showing high Q of ˜43k. The low resistivity device shows an overall temperature-induced frequency drift of 200 ppm over the range of -20 °C to 80 °C, which is ˜15× smaller compared to overall frequency drift measured for the similar yet high resistivity device in the same temperature range. Furthermore, a frequency tuning of ˜2100 ppm is achieved in high resistivity device by passing 45 mA DC current through its body. Continuous operation of the device under such a self-ovenizing current over 10 days did not induce frequency instability or degradation in Q.

  1. Variable-Width Datapath for On-Chip Network Static Power Reduction

    Energy Technology Data Exchange (ETDEWEB)

    Michelogiannakis, George; Shalf, John

    2013-11-13

    With the tight power budgets in modern large-scale chips and the unpredictability of application traffic, on-chip network designers are faced with the dilemma of designing for worst- case bandwidth demands and incurring high static power overheads, or designing for an average traffic pattern and risk degrading performance. This paper proposes adaptive bandwidth networks (ABNs) which divide channels and switches into lanes such that the network provides just the bandwidth necessary in each hop. ABNs also activate input virtual channels (VCs) individually and take advantage of drowsy SRAM cells to eliminate false VC activations. In addition, ABNs readily apply to silicon defect tolerance with just the extra cost for detecting faults. For application traffic, ABNs reduce total power consumption by an average of 45percent with comparable performance compared to single-lane power-gated networks, and 33percent compared to multi-network designs.

  2. Formation of periodic mesoscale structures arranged in a circular symmetry at the silicon surface exposed to radiation of a single femtosecond laser pulse

    International Nuclear Information System (INIS)

    Romashevskiy, S.A.; Ashitkov, S.I.; Ovchinnikov, A.V.; Kondratenko, P.S.; Agranat, M.B.

    2016-01-01

    Graphical abstract: - Highlights: • Single pulse irradiation of silicon gave rise to the periodic mesoscale structures. • The number of the periodic structures depends on the incident laser fluence. • The theory of periodically modulated absorption of laser energy is proposed. - Abstract: The periodic mesoscale structures arranged in a circular symmetry were found at the silicon surface exposed to radiation of the single femtosecond laser pulse with a Gaussian intensity profile in the ambient air conditions. These peculiar structures have the appearance of the protrusions of ∼10 nm height and of ∼600 nm width (at a FWHM) separately located inside the ablated region with a period of the incident laser wavelength. It was found that their position at the surface corresponds to the specified laser intensity slightly above the ablation threshold. The number of the formed periodic structures varies with the fluence of the incident laser pulse and in our experiments it was found to have changed from one to eleven. We suppose that formation of these mesoscale structures is caused by heating of a microscale volume to the strongly defined temperature. The theoretical model was proposed to explain the obtained data. It assumes that the interference of incident laser radiation with laser-induced surface electromagnetic waves results in generation of periodic distribution of electron temperature. Thus formation of the periodic structures at the specified laser intensity is attributed to periodically modulated absorption of laser energy at a focal laser spot.

  3. Single carrier trapping and de-trapping in scaled silicon complementary metal-oxide-semiconductor field-effect transistors at low temperatures

    Science.gov (United States)

    Li, Zuo; Khaled Husain, Muhammad; Yoshimoto, Hiroyuki; Tani, Kazuki; Sasago, Yoshitaka; Hisamoto, Digh; Fletcher, Jonathan David; Kataoka, Masaya; Tsuchiya, Yoshishige; Saito, Shinichi

    2017-07-01

    The scaling of Silicon (Si) technology is approaching the physical limit, where various quantum effects such as direct tunnelling and quantum confinement are observed, even at room temperatures. We have measured standard complementary metal-oxide-semiconductor field-effect-transistors (CMOSFETs) with wide and short channels at low temperatures to observe single electron/hole characteristics due to local structural disturbances such as roughness and defects. In fact, we observed Coulomb blockades in sub-threshold regimes of both p-type and n-type Si CMOSFETs, showing the presence of quantum dots in the channels. The stability diagrams for the Coulomb blockade were explained by the potential minima due to poly-Si grains. We have also observed sharp current peaks at narrow bias windows at the edges of the Coulomb diamonds, showing resonant tunnelling of single carriers through charge traps.

  4. Space division multiplexing chip-to-chip quantum key distribution

    DEFF Research Database (Denmark)

    Bacco, Davide; Ding, Yunhong; Dalgaard, Kjeld

    2017-01-01

    nodes of the quantum keys to their respective destinations. In this paper we present an experimental demonstration of a photonic integrated silicon chip quantum key distribution protocols based on space division multiplexing (SDM), through multicore fiber technology. Parallel and independent quantum......Quantum cryptography is set to become a key technology for future secure communications. However, to get maximum benefit in communication networks, transmission links will need to be shared among several quantum keys for several independent users. Such links will enable switching in quantum network...... keys are obtained, which are useful in crypto-systems and future quantum network....

  5. Mixed-signal early vision chip with embedded image and programming memories and digital I/O

    Science.gov (United States)

    Linan-Cembrano, Gustavo; Rodriguez-Vazquez, Angel; Dominguez-Castro, Rafael; Espejo, Servando

    2003-04-01

    From a system level perspective, this paper presents a 128x128 flexible and reconfigurable Focal-Plane Analog Programmable Array Processor, which has been designed as a single chip in a 0.35μm standard digital 1P-5M CMOS technology. The core processing array has been designed to achieve high-speed of operation and large-enough accuracy (~7bit) with low power consumption. The chip includes on-chip program memory to allow for the execution of complex, sequential and/or bifurcation flow image processing algorithms. It also includes the structures and circuits needed to guarantee its embedding into conventional digital hosting systems: external data interchange and control are completely digital. The chip contains close to four million transistors, 90% of them working in analog mode. The chip features up to 330GOPs (Giga Operations per second), and uses the power supply (180GOP/Joule) and the silicon area (3.8 GOPS/mm2) efficiently, as it is able to maintain VGA processing throughputs of 100Frames/s with about 15 basic image processing tasks on each frame.

  6. Characterization of the Photon Counting CHASE Jr., Chip Built in a 40-nm CMOS Process With a Charge Sharing Correction Algorithm Using a Collimated X-Ray Beam

    Energy Technology Data Exchange (ETDEWEB)

    Krzyżanowska, A. [AGH-UST, Cracow; Deptuch, G. W. [Fermilab; Maj, P. [AGH-UST, Cracow; Gryboś, P. [AGH-UST, Cracow; Szczygieł, R. [AGH-UST, Cracow

    2017-08-01

    This paper presents the detailed characterization of a single photon counting chip, named CHASE Jr., built in a CMOS 40-nm process, operating with synchrotron radiation. The chip utilizes an on-chip implementation of the C8P1 algorithm. The algorithm eliminates the charge sharing related uncertainties, namely, the dependence of the number of registered photons on the discriminator’s threshold, set for monochromatic irradiation, and errors in the assignment of an event to a certain pixel. The article presents a short description of the algorithm as well as the architecture of the CHASE Jr., chip. The analog and digital functionalities, allowing for proper operation of the C8P1 algorithm are described, namely, an offset correction for two discriminators independently, two-stage gain correction, and different operation modes of the digital blocks. The results of tests of the C8P1 operation are presented for the chip bump bonded to a silicon sensor and exposed to the 3.5- μm -wide pencil beam of 8-keV photons of synchrotron radiation. It was studied how sensitive the algorithm performance is to the chip settings, as well as the uniformity of parameters of the analog front-end blocks. Presented results prove that the C8P1 algorithm enables counting all photons hitting the detector in between readout channels and retrieving the actual photon energy.

  7. Development and characterisation of a radiation hard readout chip for the LHCb experiment

    CERN Document Server

    Baumeister, Daniel; Stachel, Johanna

    2003-01-01

    Within this doctoral thesis parts of the radiation hard readout chip Beetle have been developed and characterised, before and after irradiation. The design work included the analogue memory with the corresponding readout amplifier as well as components of the digital control circuitry. An interface compatible with the I2C-standard and the control logic for event readout have been implemented. A scheme has been developed which ensures the robustness of the Beetle chip against Single-Event Upset (SEU). This includes the consistent use of triple-redundant memory devices together with a self-triggered correction in parts of the circuit. The Beetle ASIC is a 128 channel pipelined readout chip for silicon strip detectors. The front-end consists of a charge-sensitive preamplifier and a CR-RC pulse shaper. It features an equivalent noise charge of ENC = 497 e− +48.3 e−/pF·Cin. The analogue memory is a switched capacitor array, which provides a latency of max. 4 µs. The 128 channels are transmitted off chip in 9...

  8. Single-Cell Analysis of Yeast, Mammalian Cells, and Fungal Spores With a Microfluidic Pressure-Driven Chip-Based System

    Czech Academy of Sciences Publication Activity Database

    Palková, Z.; Váchová, Libuše; Valer, M.; Preckel, T.

    2004-01-01

    Roč. 59, - (2004), s. 246-253 ISSN 1552-4922 R&D Projects: GA ČR GA204/02/0650 Grant - others:GA MŠk(CZ) LA 141 Keywords : microfluidic * lab -on-a- chip * flow cytometry Subject RIV: EE - Microbiology, Virology Impact factor: 1.061, year: 2002

  9. A chip-to-chip nanoliter microfluidic dispenser.

    Science.gov (United States)

    Wang, Jianbin; Zhou, Ying; Qiu, Haiwei; Huang, Huang; Sun, Changhong; Xi, Jianzhong; Huang, Yanyi

    2009-07-07

    A high-throughput microfluidic device is developed to handle liquid dispensation in nanoliter range. The dispenser system shows no cross-contamination between the microwells, indicating its great potential in large-scale screening experiments. An array of 115 nl PCR reactions, as well as the single channel addressable chip demonstrate the high flexibility and wide applications of this novel system.

  10. Multi-Level Micromachined Systems-on-a-Chip: Technology and Applications

    Energy Technology Data Exchange (ETDEWEB)

    Allen, J.J.; Krygowski, T.W.; Miller, S.L.; Montague, S.; Rodgers, M.S.; Smith, J.H.; Sniegowski, J.J.

    1998-10-27

    Researchers at Sandia have recently designed and built several research prototypes, which demonstrate that truly complex mechanical systems can now be realized in a surface micromachined technology. These MicroElectro- Mechanical Systems (MEMS) include advanced actuators, torque multiplying gear tmins, rack and pinion assemblies, positionable mirrors, and mechanical discriminators. All of tile mechanical components are batch fabricated on a single chip of silicon using the infrastructure origimdly developed to support today's highly reliabk; and robust microelectronics industry. Sand ia is also developing the technology 10 integrate microelectronic circuits onto the s,ime piece of silicon that is used to fabricate the MEMS devices. This significantly increases sensitivity and reliability, while fhrther reducing package size and fabrication costs. A review of the MEMS technology and capabilities available at Sandia National Laboratories is presented.

  11. On-chip integration for in-plane video transmission using visible light

    Science.gov (United States)

    Yang, Yongchao; Yuan, Jialei; Li, Yuanhang; Gao, Xumin; Wang, Yongjin

    2016-10-01

    We demonstrate a wafer-level process for achieving monolithic photonic integration of a light-emitting diode (LED) with a waveguide and photodiode on a GaN-on-silicon platform. Both silicon removal and back-side thinning are conducted to achieve a suspended device architecture. A highly confined waveguide that utilizes the large index contrast between GaN and air is used for the connection between the LED and the photodiode. The suspended waveguide is considered as an in-plane escape cone of the LED, and the photodiode is located at the other end of the waveguide. The photons emitted from the LED are transported to the photodiode through the suspended waveguide parallel to the LED surface, leading to in-plane data transport using visible light. This proof-of-concept monolithic integration paves the way towards in-plane visible light communication as well as photonic computation on a single chip.

  12. Heterogeneous Silicon Photonics OFDR Sensing System, Phase I

    Data.gov (United States)

    National Aeronautics and Space Administration — Luna will team with Dr. John Bowers of UCSB to develop an Optical Frequency Domain Reflectometry (OFDR) system-on-chip using heterogeneous silicon photonics to...

  13. Silicon photonics for telecommunications and biomedicine

    CERN Document Server

    Fathpour, Sasan

    2011-01-01

    Given silicon's versatile material properties, use of low-cost silicon photonics continues to move beyond light-speed data transmission through fiber-optic cables and computer chips. Its application has also evolved from the device to the integrated-system level. A timely overview of this impressive growth, Silicon Photonics for Telecommunications and Biomedicine summarizes state-of-the-art developments in a wide range of areas, including optical communications, wireless technologies, and biomedical applications of silicon photonics. With contributions from world experts, this reference guides

  14. Calibration of the apparent temperature of silicon single crystals as a function of their true temperature and their thickness as determined by infrared measurements

    International Nuclear Information System (INIS)

    Smither, R.K.; Fernandez, P.B.

    1993-09-01

    Viewing the surface of objects subjected to high heat fluxes with an infrared camera or infrared sensor has proved to be a very effective method for monitoring the magnitude and distribution of surface temperature on the object. This approach has been quite useful in studies of cooling silicon crystals in monochromators subject to high heat loads. The main drawback to this method is that single crystals of silicon are partially transparent to the infrared radiation monitored in most infrared cameras. This means that the infrared radiation emitted from the surface contains a component that comes from the interior of the crystal and that the intensity of the emitted radiation and thus the apparent temperature of the surface of the crystal depends on the thickness of the crystal and the kind of coating on the back (and/or the front) of the crystal. The apparent temperature of the crystal increases as the crystal is made thicker. A series of experiments were performed at Argonne National Laboratory to calibrate the apparent surface temperature of the crystal as measured with an infrared camera as a function of the crystal thickness and the type of coating (if any) on the back side of the crystal. A good reflecting surface on the back side of the crystal increases the apparent temperature of the crystal and simulates the response of a crystal twice the thickness. These measurements make it possible to interpret the infrared signals from cooled silicon crystals used in past high heat load experiments. A number of examples are given for data taken in synchrotron experiments with high intensity x-ray beams

  15. Single-electron regime and Pauli spin blockade in a silicon metal-oxide-semiconductor double quantum dot

    Science.gov (United States)

    Rochette, Sophie; Ten Eyck, Gregory A.; Pluym, Tammy; Lilly, Michael P.; Carroll, Malcolm S.; Pioro-Ladrière, Michel

    2015-03-01

    Silicon quantum dots are promising candidates for quantum information processing as spin qubits with long coherence time. We present electrical transport measurements on a silicon metal-oxide-semiconductor (MOS) double quantum dot (DQD). First, Coulomb diamonds measurements demonstrate the one-electron regime at a relatively high temperature of 1.5 K. Then, the 8 mK stability diagram shows Pauli spin blockade with a large singlet-triplet separation of approximatively 0.40 meV, pointing towards a strong lifting of the valley degeneracy. Finally, numerical simulations indicate that by integrating a micro-magnet to those devices, we could achieve fast spin rotations of the order of 30 ns. Those results are part of the recent body of work demonstrating the potential of Si MOS DQD as reliable and long-lived spin qubits that could be ultimately integrated into modern electronic facilities. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. DOE's National Nuclear Security Administration under Contract DE-AC04-94AL85000.

  16. Thermometry of Silicon Nanoparticles

    Science.gov (United States)

    Mecklenburg, Matthew; Zutter, Brian; Regan, B. C.

    2018-01-01

    Current thermometry techniques lack the spatial resolution required to see the temperature gradients in typical, highly scaled modern transistors. As a step toward addressing this problem, we measure the temperature dependence of the volume plasmon energy in silicon nanoparticles from room temperature to 1250 °C , using a chip-style heating sample holder in a scanning transmission electron microscope (STEM) equipped with electron energy loss spectroscopy (EELS). The plasmon energy changes as expected for an electron gas subject to the thermal expansion of silicon. Reversing this reasoning, we find that measurements of the plasmon energy provide an independent measure of the nanoparticle temperature consistent with that of the heater chip's macroscopic, dual-function heater-and-thermometer to within the 5% accuracy of the thermometer's calibration. Thus, silicon has the potential to provide its own high-spatial-resolution thermometric readout signal via measurements of its volume plasmon energy. Furthermore, nanoparticles can, in general, serve as convenient nanothermometers for in situ electron-microscopy experiments.

  17. PECASE: All-Optical Photonic Integrated Circuits in Silicon

    Science.gov (United States)

    2011-01-14

    linear and nonlinear optical properties of silicon micro/ nano cavities for chip-scale sensing and signal processing. To achieve this goal, in what...enhancing the linear and nonlinear optical properties of silicon micro/ nano cavities for chip- scale sensing and signal processing. To achieve this...During the TIRS measurements, the samples are placed on a TEC -equipped stage with a built-in thermistor to monitor the temperature. The transmission

  18. Sub-Micrometer Zeolite Films on Gold-Coated Silicon Wafers with Single-Crystal-Like Dielectric Constant and Elastic Modulus

    Energy Technology Data Exchange (ETDEWEB)

    Tiriolo, Raffaele [Department of Medical and Surgical Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy; Rangnekar, Neel [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Zhang, Han [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Shete, Meera [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Bai, Peng [Department of Chemistry and Chemistry Theory Center, University of Minnesota, 207 Pleasant St SE Minneapolis MN 55455 USA; Nelson, John [Characterization Facility, University of Minnesota, 12 Shepherd Labs, 100 Union St. S.E. Minneapolis MN 55455 USA; Karapetrova, Evguenia [Surface Scattering and Microdiffraction, X-ray Science Division, Argonne National Laboratory, 9700 S. Cass Ave, Building 438-D002 Argonne IL 60439 USA; Macosko, Christopher W. [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA; Siepmann, Joern Ilja [Department of Chemistry and Chemistry Theory Center, University of Minnesota, 207 Pleasant St SE Minneapolis MN 55455 USA; Lamanna, Ernesto [Department of Health Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy; Lavano, Angelo [Department of Medical and Surgical Sciences, University Magna Graecia of Catanzaro, Viale Europa 88100 Catanzaro Italy; Tsapatsis, Michael [Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave SE Minneapolis MN 55455 USA

    2017-05-08

    A low-temperature synthesis coupled with mild activation produces zeolite films exhibiting low dielectric constant (low-k) matching the theoretically predicted and experimentally measured values for single crystals. This synthesis and activation method allows for the fabrication of a device consisting of a b-oriented film of the pure-silica zeolite MFI (silicalite-1) supported on a gold-coated silicon wafer. The zeolite seeds are assembled by a manual assembly process and subjected to optimized secondary growth conditions that do not cause corrosion of the gold underlayer, while strongly promoting in-plane growth. The traditional calcination process is replaced with a non-thermal photochemical activation to ensure preservation of an intact gold layer. The dielectric constant (k), obtained through measurement of electrical capacitance in a metal-insulator-metal configuration, highlights the ultralow k approximate to 1.7 of the synthetized films, which is among the lowest values reported for an MFI film. There is large improvement in elastic modulus of the film (E approximate to 54 GPa) over previous reports, potentially allowing for integration into silicon wafer processing technology.

  19. Silicon photonics: some remaining challenges

    Science.gov (United States)

    Reed, G. T.; Topley, R.; Khokhar, A. Z.; Thompson, D. J.; Stanković, S.; Reynolds, S.; Chen, X.; Soper, N.; Mitchell, C. J.; Hu, Y.; Shen, L.; Martinez-Jimenez, G.; Healy, N.; Mailis, S.; Peacock, A. C.; Nedeljkovic, M.; Gardes, F. Y.; Soler Penades, J.; Alonso-Ramos, C.; Ortega-Monux, A.; Wanguemert-Perez, G.; Molina-Fernandez, I.; Cheben, P.; Mashanovich, G. Z.

    2016-03-01

    This paper discusses some of the remaining challenges for silicon photonics, and how we at Southampton University have approached some of them. Despite phenomenal advances in the field of Silicon Photonics, there are a number of areas that still require development. For short to medium reach applications, there is a need to improve the power consumption of photonic circuits such that inter-chip, and perhaps intra-chip applications are viable. This means that yet smaller devices are required as well as thermally stable devices, and multiple wavelength channels. In turn this demands smaller, more efficient modulators, athermal circuits, and improved wavelength division multiplexers. The debate continues as to whether on-chip lasers are necessary for all applications, but an efficient low cost laser would benefit many applications. Multi-layer photonics offers the possibility of increasing the complexity and effectiveness of a given area of chip real estate, but it is a demanding challenge. Low cost packaging (in particular, passive alignment of fibre to waveguide), and effective wafer scale testing strategies, are also essential for mass market applications. Whilst solutions to these challenges would enhance most applications, a derivative technology is emerging, that of Mid Infra-Red (MIR) silicon photonics. This field will build on existing developments, but will require key enhancements to facilitate functionality at longer wavelengths. In common with mainstream silicon photonics, significant developments have been made, but there is still much left to do. Here we summarise some of our recent work towards wafer scale testing, passive alignment, multiplexing, and MIR silicon photonics technology.

  20. Multifunctional System-on-Glass for Lab-on-Chip applications.

    Science.gov (United States)

    Petrucci, G; Caputo, D; Lovecchio, N; Costantini, F; Legnini, I; Bozzoni, I; Nascetti, A; de Cesare, G

    2017-07-15

    Lab-on-Chip are miniaturized systems able to perform biomolecular analysis in shorter time and with lower reagent consumption than a standard laboratory. Their miniaturization interferes with the multiple functions that the biochemical procedures require. In order to address this issue, our paper presents, for the first time, the integration on a single glass substrate of different thin film technologies in order to develop a multifunctional platform suitable for on-chip thermal treatments and on-chip detection of biomolecules. The proposed System on-Glass hosts thin metal films acting as heating sources; hydrogenated amorphous silicon diodes acting both as temperature sensors to monitor the temperature distribution and photosensors for the on-chip detection and a ground plane ensuring that the heater operation does not affect the photodiode currents. The sequence of the technological steps, the deposition temperatures of the thin films and the parameters of the photolithographic processes have been optimized in order to overcome all the issues of the technological integration. The device has been designed, fabricated and tested for the implementation of DNA amplification through the Polymerase Chain Reaction (PCR) with thermal cycling among three different temperatures on a single site. The glass has been connected to an electronic system that drives the heaters and controls the temperature and light sensors. It has been optically and thermally coupled with another glass hosting a microfluidic network made in polydimethylsiloxane that includes thermally actuated microvalves and a PCR process chamber. The successful DNA amplification has been verified off-chip by using a standard fluorometer. Copyright © 2016 Elsevier B.V. All rights reserved.

  1. The friction and wear of metals and binary alloys in contact with an abrasive grit of single-crystal silicon carbide

    Science.gov (United States)

    Miyoshi, K.; Buckley, D. H.

    1979-01-01

    Sliding friction experiments were conducted with various metals and iron-base binary alloys (alloying elements Ti, Cr, Mn, Ni, Rh, and W) in contact with single-crystal silicon carbide riders. Results indicate that the coefficient of friction and groove height (corresponding to the wear volume) decrease linearly as the shear strength of the bulk metal increases. The coefficient of friction and groove height generally decrease with an increase in solute content of binary alloys. A separate correlation exists between the solute to iron atomic radius ratio and the decreasing rates of change of coefficient of friction and groove height with increasing solute content. These rates of change are minimum at a solute to iron radius ratio of unity. They increase as the atomic ratio increases or decreases linearly from unity. The correlations indicate that atomic size is an important parameter in controlling friction and wear of alloys.

  2. On-chip concentration of bacteria using a 3D dielectrophoretic chip and subsequent laser-based DNA extraction in the same chip

    International Nuclear Information System (INIS)

    Cho, Yoon-Kyoung; Kim, Tae-hyeong; Lee, Jeong-Gun

    2010-01-01

    We report the on-chip concentration of bacteria using a dielectrophoretic (DEP) chip with 3D electrodes and subsequent laser-based DNA extraction in the same chip. The DEP chip has a set of interdigitated Au post electrodes with 50 µm height to generate a network of non-uniform electric fields for the efficient trapping by DEP. The metal post array was fabricated by photolithography and subsequent Ni and Au electroplating. Three model bacteria samples (Escherichia coli, Staphylococcus epidermidis, Streptococcus mutans) were tested and over 80-fold concentrations were achieved within 2 min. Subsequently, on-chip DNA extraction from the concentrated bacteria in the 3D DEP chip was performed by laser irradiation using the laser-irradiated magnetic bead system (LIMBS) in the same chip. The extracted DNA was analyzed with silicon chip-based real-time polymerase chain reaction (PCR). The total process of on-chip bacteria concentration and the subsequent DNA extraction can be completed within 10 min including the manual operation time.

  3. Microchip traps: the quantum lab on a chip

    International Nuclear Information System (INIS)

    Reichel, J.

    2005-01-01

    Full text: Experiments with Bose-Einstein condensates (BECs) of cold atoms have accelerated progress in our understanding of the quantum world. Microchip traps ('atom chips') accelerate and miniaturize the production and manipulation of BECs. On an atom chip, the BEC is located only microns away from the chip surface, making it easy to manipulate its state with on-chip current-carrying conductors or other micro- and nanostructures. Despite the fact that the chip surface is at room-temperature, internal-state coherence of the trapped atoms can live for seconds. Thus, the atom chip is developing into a quantum laboratory on a chip. We are now working to measure and control the number of atoms in the condensate with single-atom precision, and to make such condensates interact in a controlled way with one another and with a nanofabricated device on the chip. (author)

  4. High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-like Silicon Epitaxially Grown on Metal Tape by Roll-to-Roll Continuous Deposition Process.

    Science.gov (United States)

    Gao, Ying; Asadirad, Mojtaba; Yao, Yao; Dutta, Pavel; Galstyan, Eduard; Shervin, Shahab; Lee, Keon-Hwa; Pouladi, Sara; Sun, Sicong; Li, Yongkuan; Rathi, Monika; Ryou, Jae-Hyun; Selvamanickam, Venkat

    2016-11-02

    Single-crystal-like silicon (Si) thin films on bendable and scalable substrates via direct deposition are a promising material platform for high-performance and cost-effective devices of flexible electronics. However, due to the thick and unintentionally highly doped semiconductor layer, the operation of transistors has been hampered. We report the first demonstration of high-performance flexible thin-film transistors (TFTs) using single-crystal-like Si thin films with a field-effect mobility of ∼200 cm 2 /V·s and saturation current, I/l W > 50 μA/μm, which are orders-of-magnitude higher than the device characteristics of conventional flexible TFTs. The Si thin films with a (001) plane grown on a metal tape by a "seed and epitaxy" technique show nearly single-crystalline properties characterized by X-ray diffraction, Raman spectroscopy, reflection high-energy electron diffraction, and transmission electron microscopy. The realization of flexible and high-performance Si TFTs can establish a new pathway for extended applications of flexible electronics such as amplification and digital circuits, more than currently dominant display switches.

  5. Impact of interstitial iron on the study of meta-stable B-O defects in Czochralski silicon: Further evidence of a single defect

    Science.gov (United States)

    Kim, Moonyong; Chen, Daniel; Abbott, Malcolm; Nampalli, Nitin; Wenham, Stuart; Stefani, Bruno; Hallam, Brett

    2018-04-01

    We explore the influence of interstitial iron (Fei) on lifetime spectroscopy of boron-oxygen (B-O) related degradation in p-type Czochralski silicon. Theoretical and experimental evidence presented in this study indicate that iron-boron pair (Fe-B) related reactions could have influenced several key experimental results used to derive theories on the fundamental properties of the B-O defect. Firstly, the presence of Fei can account for higher apparent capture cross-section ratios (k) of approximately 100 observed in previous studies during early stages of B-O related degradation. Secondly, the association of Fe-B pairs can explain the initial stage of a two-stage recovery of carrier lifetime with dark annealing after partial degradation. Thirdly, Fei can result in high apparent k values after the permanent deactivation of B-O defects. Subsequently, we show that a single k value can describe the recombination properties associated with B-O defects throughout degradation, that the recovery during dark annealing occurs with a single-stage, and both the fast- and slow-stage B-O related degradation can be permanently deactivated during illuminated annealing. Accounting for the recombination activity of Fei provides further evidence that the B-O defect is a single defect, rather than two separate defects normally attributed to fast-forming recombination centers and slow-forming recombination centers. Implications of this finding for the nature of the B-O defect are also discussed.

  6. Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors.

    Science.gov (United States)

    Lee, W; Su, P

    2009-02-11

    This paper systematically presents controlled single-electron effects in multiple-gate silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) with various gate lengths, fin widths, gate bias and temperature. Our study indicates that using the non-overlapped gate to source/drain structure as an approach to the single-electron transistor (SET) in MOSFETs is promising. Combining the advantage of gate control and the constriction of high source/drain resistances, single-electron effects are further enhanced using the multiple-gate architecture. From the presented results, downsizing multiple-gate SOI MOSFETs is needed for future room-temperature SET applications. Besides, the tunnel barriers and access resistances may need to be further optimized. Since the Coulomb blockade oscillation can be achieved in state-of-the-art complementary metal-oxide-semiconductor (CMOS) devices, it is beneficial to build SETs in low-power CMOS circuits for ultra-high-density purposes.

  7. Echelle grating for silicon photonics applications: integration of electron beam lithography in the process flow and first results

    Science.gov (United States)

    Kaschel, Mathias; Letzkus, Florian; Butschke, Jörg; Skwierawski, Piotr; Schneider, Marc; Weber, Marc

    2016-05-01

    We present the technology steps to integrate an Echelle grating in the process flow of silicon-organic hybrid (SOH) modulators or related active devices. The CMOS-compatible process flow on SOI substrates uses a mix of optical i-line lithography and electron beam lithography (EBL). High speed optical data communication depends on wavelength divisions multiplexing and de-multiplexing devices like Echelle gratings. The minimum feature sizes vary from device to device and reach down to 60 nm inside a modulator, while the total area of a single Echelle grating is up to several mm2 of unprocessed silicon. Resist patterning using a variable shape beam electron beam pattern generator allows high resolution. An oxide hard mask is deposited, patterns are structured threefold by EBL and are later transferred to the silicon. We demonstrate a 9-channel multiplexer featuring a 2 dB on-chip loss and an adjacent channel crosstalk better than -22 dB. Additionally a 45-channel Echelle multiplexer is presented with 5 dB on chip loss and a channel crosstalk better than -12 dB. The devices cover an on-chip area of only 0.08 mm2 and 0.5 mm2 with a wavelength spacing of 10.5 nm and 2.0 nm, respectively.

  8. Lab-on-a-chip systems with integrated optics for biochemical applications

    DEFF Research Database (Denmark)

    Mogensen, Klaus Bo; Gustafsson, O; Nunes, Pedro

    2008-01-01

    Two different applications that take advantage of integrated planar waveguides will be shown. The first example is a silicon chips for capillary electrochromatography (CEC), where the fluidic part contains electrically insulated channels with an injection cross and a chromatography column...

  9. Nonlinear silicon photonics

    Science.gov (United States)

    Borghi, M.; Castellan, C.; Signorini, S.; Trenti, A.; Pavesi, L.

    2017-09-01

    Silicon photonics is a technology based on fabricating integrated optical circuits by using the same paradigms as the dominant electronics industry. After twenty years of fervid development, silicon photonics is entering the market with low cost, high performance and mass-manufacturable optical devices. Until now, most silicon photonic devices have been based on linear optical effects, despite the many phenomenologies associated with nonlinear optics in both bulk materials and integrated waveguides. Silicon and silicon-based materials have strong optical nonlinearities which are enhanced in integrated devices by the small cross-section of the high-index contrast silicon waveguides or photonic crystals. Here the photons are made to strongly interact with the medium where they propagate. This is the central argument of nonlinear silicon photonics. It is the aim of this review to describe the state-of-the-art in the field. Starting from the basic nonlinearities in a silicon waveguide or in optical resonator geometries, many phenomena and applications are described—including frequency generation, frequency conversion, frequency-comb generation, supercontinuum generation, soliton formation, temporal imaging and time lensing, Raman lasing, and comb spectroscopy. Emerging quantum photonics applications, such as entangled photon sources, heralded single-photon sources and integrated quantum photonic circuits are also addressed at the end of this review.

  10. CMOS-compatible photonic devices for single-photon generation

    Directory of Open Access Journals (Sweden)

    Xiong Chunle

    2016-09-01

    Full Text Available Sources of single photons are one of the key building blocks for quantum photonic technologies such as quantum secure communication and powerful quantum computing. To bring the proof-of-principle demonstration of these technologies from the laboratory to the real world, complementary metal–oxide–semiconductor (CMOS-compatible photonic chips are highly desirable for photon generation, manipulation, processing and even detection because of their compactness, scalability, robustness, and the potential for integration with electronics. In this paper, we review the development of photonic devices made from materials (e.g., silicon and processes that are compatible with CMOS fabrication facilities for the generation of single photons.

  11. Time-resolved single-photon detection module based on silicon photomultiplier: A novel building block for time-correlated measurement systems

    Energy Technology Data Exchange (ETDEWEB)

    Martinenghi, E., E-mail: edoardo.martinenghi@polimi.it; Di Sieno, L.; Contini, D.; Dalla Mora, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Sanzaro, M. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Pifferi, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, 20133 Milano (Italy)

    2016-07-15

    We present the design and preliminary characterization of the first detection module based on Silicon Photomultiplier (SiPM) tailored for single-photon timing applications. The aim of this work is to demonstrate, thanks to the design of a suitable module, the possibility to easily exploit SiPM in many applications as an interesting detector featuring large active area, similarly to photomultipliers tubes, but keeping the advantages of solid state detectors (high quantum efficiency, low cost, compactness, robustness, low bias voltage, and insensitiveness to magnetic field). The module integrates a cooled SiPM with a total photosensitive area of 1 mm{sup 2} together with the suitable avalanche signal read-out circuit, the signal conditioning, the biasing electronics, and a Peltier cooler driver for thermal stabilization. It is able to extract the single-photon timing information with resolution better than 100 ps full-width at half maximum. We verified the effective stabilization in response to external thermal perturbations, thus proving the complete insensitivity of the module to environment temperature variations, which represents a fundamental parameter to profitably use the instrument for real-field applications. We also characterized the single-photon timing resolution, the background noise due to both primary dark count generation and afterpulsing, the single-photon detection efficiency, and the instrument response function shape. The proposed module can become a reliable and cost-effective building block for time-correlated single-photon counting instruments in applications requiring high collection capability of isotropic light and detection efficiency (e.g., fluorescence decay measurements or time-domain diffuse optics systems).

  12. High Sensitivity and High Detection Specificity of Gold-Nanoparticle-Grafted Nanostructured Silicon Mass Spectrometry for Glucose Analysis.

    Science.gov (United States)

    Tsao, Chia-Wen; Yang, Zhi-Jie

    2015-10-14

    Desorption/ionization on silicon (DIOS) is a high-performance matrix-free mass spectrometry (MS) analysis method that involves using silicon nanostructures as a matrix for MS desorption/ionization. In this study, gold nanoparticles grafted onto a nanostructured silicon (AuNPs-nSi) surface were demonstrated as a DIOS-MS analysis approach with high sensitivity and high detection specificity for glucose detection. A glucose sample deposited on the AuNPs-nSi surface was directly catalyzed to negatively charged gluconic acid molecules on a single AuNPs-nSi chip for MS analysis. The AuNPs-nSi surface was fabricated using two electroless deposition steps and one electroless etching step. The effects of the electroless fabrication parameters on the glucose detection efficiency were evaluated. Practical application of AuNPs-nSi MS glucose analysis in urine samples was also demonstrated in this study.

  13. Silicon and Glass Micromachining

    NARCIS (Netherlands)

    Carlen, Edwin; Bomer, Johan G.; van Nieuwkasteele, Jan William; van den Berg, Albert; Herold, K.E.; Rasooly, A.

    The past two decades have seen rapid advancement of Lab on a Chip (LOC) systems with applications ranging from gas chromatography to capillary electrophoresis, and more recently to high-pressure chemistry and single cell analysis. For many applications in clinical medicine, biology and chemistry,

  14. Comparative Studies of Silicon Dissolution in Molten Aluminum Under Different Flow Conditions, Part I: Single-Phase Flow

    Science.gov (United States)

    Seyed Ahmadi, Mehran; Argyropoulos, Stavros A.; Bussmann, Markus; Doutre, Don

    2015-02-01

    This manuscript presents research work related to the assimilation of Silicon (Si) in molten Aluminum (Al) under natural and forced convection conditions. The effects of impurity levels of solid Si, Al bath temperature, and fluid flow conditions were investigated. It was found that a polycrystalline metallurgical grade Si (MGSi) with higher levels of impurities dissolved more slowly than high purity polycrystalline MGSi, which showed a similar dissolution rate to monocrystalline electronic grade Si. For high-purity Si cylinders, the experimental data under natural convection conditions exhibit good agreement with a correlation for vertical cylinders: overline{Sh} = ( 0. 1 1 {{to}}0.129)(Gr_m Sc)^{1/3} . Under forced convection conditions, by rotating the molten Al, the mass transfer rate increased at higher liquid velocities, implying that the dissolution process is controlled by liquid phase diffusion. When the forced convection prevails, the experimental data are well predicted by a correlation for vertical cylinders in cross flow: overline{Sh} = 0.3 + {0.62{Re}^{1/2} Sc^{1/3} }/{[ {1 + (0.4/Sc)^{2/3 } ]^{1/4} }}[ {1 + ( {{Re} /282000} )^{5/8} } ]^{4/5} . Finally, at lower velocities of liquid Al, the combined effect of natural and forced convection must be considered, and a correlation is proposed based on the buoyancy force normal to the direction of the flow.

  15. A simplified boron diffusion for preparing the silicon single crystal p-n junction as an educational device

    International Nuclear Information System (INIS)

    Shiota, Koki; Kai, Kazuho; Nagaoka, Shiro; Tsuji, Takuto; Wakahara, Akihiro; Rusop, Mohamad

    2016-01-01

    The educational method which is including designing, making, and evaluating actual semiconductor devices with learning the theory is one of the best way to obtain the fundamental understanding of the device physics and to cultivate the ability to make unique ideas using the knowledge in the semiconductor device. In this paper, the simplified Boron thermal diffusion process using Sol-Gel material under normal air environment was proposed based on simple hypothesis and the feasibility of the reproducibility and reliability were investigated to simplify the diffusion process for making the educational devices, such as p-n junction, bipolar and pMOS devices. As the result, this method was successfully achieved making p+ region on the surface of the n-type silicon substrates with good reproducibility. And good rectification property of the p-n junctions was obtained successfully. This result indicates that there is a possibility to apply on the process making pMOS or bipolar transistors. It suggests that there is a variety of the possibility of the applications in the educational field to foster an imagination of new devices.

  16. A simplified boron diffusion for preparing the silicon single crystal p-n junction as an educational device

    Energy Technology Data Exchange (ETDEWEB)

    Shiota, Koki, E-mail: a14510@sr.kagawa-nct.ac.jp; Kai, Kazuho; Nagaoka, Shiro, E-mail: nagaoka@es.kagawa-nct.ac.jp [National Institute of Technology, Kagawa College, Kagawa, Mitoyo, Takuma, Koda 551 (Japan); Tsuji, Takuto [National Institute of Technology, Suzuka College, Mie, Suzuka, Shiroko (Japan); Wakahara, Akihiro [Toyohashi University of Technology, Aichi, Toyohashi, Tenpaku, Hibarigaoka 1-1 (Japan); Rusop, Mohamad [University Technology Mara, Selangor, Shah Alam, 40450 (Malaysia)

    2016-07-06

    The educational method which is including designing, making, and evaluating actual semiconductor devices with learning the theory is one of the best way to obtain the fundamental understanding of the device physics and to cultivate the ability to make unique ideas using the knowledge in the semiconductor device. In this paper, the simplified Boron thermal diffusion process using Sol-Gel material under normal air environment was proposed based on simple hypothesis and the feasibility of the reproducibility and reliability were investigated to simplify the diffusion process for making the educational devices, such as p-n junction, bipolar and pMOS devices. As the result, this method was successfully achieved making p+ region on the surface of the n-type silicon substrates with good reproducibility. And good rectification property of the p-n junctions was obtained successfully. This result indicates that there is a possibility to apply on the process making pMOS or bipolar transistors. It suggests that there is a variety of the possibility of the applications in the educational field to foster an imagination of new devices.

  17. Electrical and Optical Characterization of Sputtered Silicon Dioxide, Indium Tin Oxide, and Silicon Dioxide/Indium Tin Oxide Antireflection Coating on Single-Junction GaAs Solar Cells

    Directory of Open Access Journals (Sweden)

    Wen-Jeng Ho

    2017-06-01

    Full Text Available This study characterized the electrical and optical properties of single-junction GaAs solar cells coated with antireflective layers of silicon dioxide (SiO2, indium tin oxide (ITO, and a hybrid layer of SiO2/ITO applied using Radio frequency (RF sputtering. The conductivity and transparency of the ITO film were characterized prior to application on GaAs cells. Reverse saturation-current and ideality factor were used to evaluate the passivation performance of the various coatings on GaAs solar cells. Optical reflectance and external quantum efficiency response were used to evaluate the antireflective performance of the coatings. Photovoltaic current-voltage measurements were used to confirm the efficiency enhancement obtained by the presence of the anti-reflective coatings. The conversion efficiency of the GaAs cells with an ITO antireflective coating (23.52% exceeded that of cells with a SiO2 antireflective coating (21.92%. Due to lower series resistance and higher short-circuit current-density, the carrier collection of the GaAs cell with ITO coating exceeded that of the cell with a SiO2/ITO coating.

  18. Nonlinear optical interactions in silicon waveguides

    Directory of Open Access Journals (Sweden)

    Kuyken B.

    2017-03-01

    Full Text Available The strong nonlinear response of silicon photonic nanowire waveguides allows for the integration of nonlinear optical functions on a chip. However, the detrimental nonlinear optical absorption in silicon at telecom wavelengths limits the efficiency of many such experiments. In this review, several approaches are proposed and demonstrated to overcome this fundamental issue. By using the proposed methods, we demonstrate amongst others supercontinuum generation, frequency comb generation, a parametric optical amplifier, and a parametric optical oscillator.

  19. LoMA-B: a simple and versatile lab-on-a-chip system based on single-channel bisulfite conversion for DNA methylation analysis.

    Science.gov (United States)

    Yoon, Jaeyun; Park, Mi Kyoung; Lee, Tae Yoon; Yoon, Yong-Jin; Shin, Yong

    2015-09-07

    Miniaturized lab-on-a-chip (LOC) systems have been developed for genetic and epigenetic analyses in clinical applications because of advantages such as reduced sample size and reagent consumption, rapid processing speed, simplicity, and enhanced sensitivity. Despite tremendous efforts made towards developing LOC systems for use in the clinical setting, the development of LOC systems to analyze DNA methylation, which is an emerging epigenetic marker causing the abnormal silencing of genes including tumor suppressor genes, is still challenging because of the gold standard methods involving a bisulfite conversion step. Existing bisulfite conversion-based techniques are not suitable for clinical use due to their long processing time, labor intensiveness, and the purification steps involved. Here, we present a lab-on-a-chip system for DNA methylation analysis based on bisulfite conversion (LoMA-B), which couples a sample pre-processing module for on-chip bisulfite conversion and a label-free, real-time detection module for rapid analysis of DNA methylation status using an isothermal DNA amplification/detection technique. The methylation status of the RARβ gene in human genomic DNA extracted from MCF-7 cells was analyzed by the LoMA-B system within 80 min (except 16 h for sensor preparation) compared to conventional MS-PCR within 24 h. Furthermore, the LoMA-B system is highly sensitive and can detect as little as 1% methylated DNA in a methylated/unmethylated cell mixture. Therefore, the LoMA-B system is an efficient diagnostic tool for the simple, versatile, and quantitative evaluation of DNA methylation patterns for clinical applications.

  20. Sensing systems using chip-based spectrometers

    Science.gov (United States)

    Nitkowski, Arthur; Preston, Kyle J.; Sherwood-Droz, Nicolás.; Behr, Bradford B.; Bismilla, Yusuf; Cenko, Andrew T.; DesRoches, Brandon; Meade, Jeffrey T.; Munro, Elizabeth A.; Slaa, Jared; Schmidt, Bradley S.; Hajian, Arsen R.

    2014-06-01

    Tornado Spectral Systems has developed a new chip-based spectrometer called OCTANE, the Optical Coherence Tomography Advanced Nanophotonic Engine, built using a planar lightwave circuit with integrated waveguides fabricated on a silicon wafer. While designed for spectral domain optical coherence tomography (SD-OCT) systems, the same miniaturized technology can be applied to many other spectroscopic applications. The field of integrated optics enables the design of complex optical systems which are monolithically integrated on silicon chips. The form factors of these systems can be significantly smaller, more robust and less expensive than their equivalent free-space counterparts. Fabrication techniques and material systems developed for microelectronics have previously been adapted for integrated optics in the telecom industry, where millions of chip-based components are used to power the optical backbone of the internet. We have further adapted the photonic technology platform for spectroscopy applications, allowing unheard-of economies of scale for these types of optical devices. Instead of changing lenses and aligning systems, these devices are accurately designed programmatically and are easily customized for specific applications. Spectrometers using integrated optics have large advantages in systems where size, robustness and cost matter: field-deployable devices, UAVs, UUVs, satellites, handheld scanning and more. We will discuss the performance characteristics of our chip-based spectrometers and the type of spectral sensing applications enabled by this technology.

  1. Directly modulated and fully tunable hybrid silicon lasers for future generation of coherent colorless ONU.

    Science.gov (United States)

    de Valicourt, G; Le Liepvre, A; Vacondio, F; Simonneau, C; Lamponi, M; Jany, C; Accard, A; Lelarge, F; Make, D; Poingt, F; Duan, G H; Fedeli, J-M; Messaoudene, S; Bordel, D; Lorcy, L; Antona, J-C; Bigo, S

    2012-12-10

    We propose and demonstrate asymmetric 10 Gbit/s upstream--100 Gbit/s downstream per wavelength colorless WDM/TDM PON using a novel hybrid-silicon chip integrating two tunable lasers. The first laser is directly modulated in burst mode for upstream transmission over up to 25 km of standard single mode fiber and error free transmission over 4 channels across the C-band is demonstrated. The second tunable laser is successfully used as local oscillator in a coherent receiver across the C-band simultaneously operating with the presence of 80 downstream co-channels.

  2. Development of a silicon microstrip detector with single photon sensitivity for fast dynamic diffraction experiments at a synchrotron radiation beam

    Science.gov (United States)

    Arakcheev, A.; Aulchenko, V.; Kudashkin, D.; Shekhtman, L.; Tolochko, B.; Zhulanov, V.

    2017-06-01

    Time-resolved experiments on the diffraction of synchrotron radiation (SR) from crystalline materials provide information on the evolution of a material structure after a heat, electron beam or plasma interaction with a sample under study. Changes in the material structure happen within a microsecond scale and a detector with corresponding parameters is needed. The SR channel 8 of the VEPP-4M storage ring provides radiation from the 7-pole wiggler that allows to reach several tens photons within one μs from a tungsten crystal for the most intensive diffraction peak. In order to perform experiments that allow to measure the evolution of tungsten crystalline structure under the impact of powerful laser beam, a new detector is developed, that can provide information about the distribution of a scattered SR flux in space and its evolution in time at a microsecond scale. The detector is based on the silicon p-in-n microstrip sensor with DC-coupled metal strips. The sensor contains 1024 30 mm long strips with a 50 μm pitch. 64 strips are bonded to the front-end electronics based on APC128 ASICs. The APC128 ASIC contains 128 channels that consist of a low noise integrator with 32 analogue memory cells each. The integrator equivalent noise charge is about 2000 electrons and thus the signal from individual photons with energy above 40 keV can be observed. The signal can be stored at the analogue memory with 10 MHz rate. The first measurements with the beam scattered from a tungsten crystal with energy near 60 keV demonstrated the capability of this prototype to observe the spatial distribution of the photon flux with the intensity from below one photon per channel up to 0~10 photons per channel with a frame rate from 10 kHz up to 1 MHz.

  3. Development of advanced Czochralski Growth Process to produce low cost 150 KG silicon ingots from a single crucible for technology readiness

    Science.gov (United States)

    1981-01-01

    The goals in this program for advanced czochralski growth process to produce low cost 150 kg silicon ingots from a single crucible for technology readiness are outlined. To provide a modified CG2000 crystal power capable of pulling a minimum of five crystals, each of approximately 30 kg in weight, 150 mm diameter from a single crucible with periodic melt replenishment. Crystals to have: resistivity of 1 to 3 ohm cm, p-type; dislocation density below 1- to the 6th power per cm; orientation (100); after growth yield of greater than 90%. Growth throughput of greater than 2.5 kg per hour of machine operation using a radiation shield. Prototype equipment suitable for use as a production facility. The overall cost goal is $.70 per peak watt by 1986. To accomplish these goals, the modified CG2000 grower and development program includes: (1) increased automation with a microprocessor based control system; (2) sensors development which will increase the capability of the automatic controls system, and provide technology transfer of the developed systems.

  4. A counting pixel chip and sensor system for X-ray imaging

    Energy Technology Data Exchange (ETDEWEB)

    Fischer, P.; Hausmann, J.; Helmich, A.; Lindner, M.; Wermes, N. [Universitaet Bonn (Germany). Physikalisches Institut; Blanquart, L. [CNRS, Marseille (France). Centre de Physique des Particules

    1999-08-01

    Results obtained with a (photon) counting pixel imaging chip connected to a silicon pixel sensor using the bump and flip-chip technology are presented. The performance of the chip electronics is characterized by an average equivalent noise charge (ENC) below 135 e and a threshold spread of less than 35 e after individual threshold adjust, both measured with a sensor attached. First results on the imaging performance are also reported.

  5. A multi-channel low-power system-on-chip for single-unit recording and narrowband wireless transmission of neural signal.

    Science.gov (United States)

    Bonfanti, A; Ceravolo, M; Zambra, G; Gusmeroli, R; Spinelli, A S; Lacaita, A L; Angotzi, G N; Baranauskas, G; Fadiga, L

    2010-01-01

    This paper reports a multi-channel neural recording system-on-chip (SoC) with digital data compression and wireless telemetry. The circuit consists of a 16 amplifiers, an analog time division multiplexer, an 8-bit SAR AD converter, a digital signal processor (DSP) and a wireless narrowband 400-MHz binary FSK transmitter. Even though only 16 amplifiers are present in our current die version, the whole system is designed to work with 64 channels demonstrating the feasibility of a digital processing and narrowband wireless transmission of 64 neural recording channels. A digital data compression, based on the detection of action potentials and storage of correspondent waveforms, allows the use of a 1.25-Mbit/s binary FSK wireless transmission. This moderate bit-rate and a low frequency deviation, Manchester-coded modulation are crucial for exploiting a narrowband wireless link and an efficient embeddable antenna. The chip is realized in a 0.35- εm CMOS process with a power consumption of 105 εW per channel (269 εW per channel with an extended transmission range of 4 m) and an area of 3.1 × 2.7 mm(2). The transmitted signal is captured by a digital TV tuner and demodulated by a wideband phase-locked loop (PLL), and then sent to a PC via an FPGA module. The system has been tested for electrical specifications and its functionality verified in in-vivo neural recording experiments.

  6. First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

    CERN Document Server

    Alemi, M; Gys, Thierry; Mikulec, B; Piedigrossi, D; Puertolas, D; Rosso, E; Schomaker, R; Snoeys, W; Wyllie, Ken H

    2000-01-01

    We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface...

  7. First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

    International Nuclear Information System (INIS)

    Alemi, M.; Campbell, M.; Gys, T.; Mikulec, B.; Piedigrossi, D.; Puertolas, D.; Rosso, E.; Schomaker, R.; Snoeys, W.; Wyllie, K.

    2000-01-01

    We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface

  8. First operation of a hybrid photon detector prototype with electrostatic cross-focussing and integrated silicon pixel readout

    Energy Technology Data Exchange (ETDEWEB)

    Alemi, M.; Campbell, M.; Gys, T. E-mail: thierry.gys@cern.ch; Mikulec, B.; Piedigrossi, D.; Puertolas, D.; Rosso, E.; Schomaker, R.; Snoeys, W.; Wyllie, K

    2000-07-11

    We report on the first operation of a hybrid photon detector prototype with integrated silicon pixel readout for the ring imaging Cherenkov detectors of the LHCb experiment. The photon detector is based on a cross-focussed image intensifier tube geometry where the image is de-magnified by a factor of 4. The anode consists of a silicon pixel array, bump-bonded to a binary readout chip with matching pixel electronics. The prototype has been characterized using a low-intensity light-emitting diode operated in pulsed mode. Its performance in terms of single-photoelectron detection efficiency and imaging properties is presented. A model of photoelectron detection is proposed, and is shown to be in good agreement with the experimental data. It includes an estimate of the charge signal generated in the silicon detector, and the combined effects of the comparator threshold spread of the pixel readout chip, charge sharing at the pixel boundaries and back-scattering of the photoelectrons at the silicon detector surface.

  9. Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient.

    Science.gov (United States)

    Barreda, Jorge L; Keiper, Timothy D; Zhang, Mei; Xiong, Peng

    2017-04-05

    In comparison to conventional (channel-limited) field-effect transistors (FETs), Schottky barrier-limited FETs possess some unique characteristics which make them attractive candidates for some electronic and sensing applications. Consequently, modulation of the nano Schottky barrier at a metal-semiconductor interface promises higher performance for chemical and biomolecular sensor applications when compared to conventional FETs with ohmic contacts. However, the fabrication and optimization of devices with a combination of ideal ohmic and Schottky contacts as the source and drain, respectively, present many challenges. We address this issue by utilizing Si nanowires (NWs) synthesized by a chemical vapor deposition process which yields a pronounced doping gradient along the length of the NWs. Devices with a series of metal contacts on a single Si NW are fabricated in a single lithography and metallization process. The graded doping profile of the NW is manifested in monotonic increases in the channel and junction resistances and variation of the nature of the contacts from ohmic to Schottky of increasing effective barrier height along the NW. Hence multiple single Schottky junction-limited FETs with extreme asymmetry and high reproducibility are obtained on an individual NW. A definitive correlation between increasing Schottky barrier height and enhanced gate modulation is revealed. Having access to systematically varying Schottky barrier contacts on the same NW device provides an ideal platform for identifying optimal device characteristics for sensing and electronic applications.

  10. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  11. ISPA (imaging silicon pixel array) experiment

    CERN Multimedia

    Patrice Loïez

    2002-01-01

    The bump-bonded silicon pixel detector, developed at CERN by the EP-MIC group, is shown here in its ceramic carrier. Both represent the ISPA-tube anode. The chip features between 1024 (called OMEGA-1) and 8196 (ALICE-1) active pixels.

  12. An integrated silicon double bridge anemometer

    NARCIS (Netherlands)

    van Putten, A.F.P.

    1983-01-01

    Since 1974, silicon has been used for making flow sensors, though a lot of problems with respect to drift in time and temperature behaviour had to be solved. This is especially the case when the chip is operating at elevated temperatures. Heat conduction plays a vital role in the general heat

  13. Multispectral absorptance from large-diameter InAsSb nanowire arrays in a single epitaxial growth on silicon

    Science.gov (United States)

    Robson, Mitchell; Azizur-Rahman, Khalifa M.; Parent, Daniel; Wojdylo, Peter; Thompson, David A.; LaPierre, Ray R.

    2017-12-01

    Vertical III-V nanowires are capable of resonant absorption at specific wavelengths by tuning the nanowire diameter, thereby exceeding the absorption of equivalent thin films. These properties may be exploited to fabricate multispectral infrared (IR) photodetectors, directly integrated with Si, without the need for spectral filters or vertical stacking of heterostructures as required in thin film devices. In this study, multiple InAsSb nanowire arrays were grown simultaneously on Si by molecular beam epitaxy with nanowire diameter controlled by the nanowire period (spacing between nanowires). This is the first such study of patterned InAsSb nanowires where control of nanowire diameter and multispectral absorption are demonstrated. The antimony flux was used to control axial and radial growth rates using a selective-area catalyst-free growth method, achieving large diameters, spanning 440–520 nm, which are necessary for optimum IR absorption. Fourier transform IR spectroscopy revealed IR absorptance peaks due to the HE11 resonance of the nanowire arrays in agreement with optical simulations. Due to the dependence of the HE11 resonance absorption on nanowire diameter, multispectral absorption was demonstrated in a single material system and a single epitaxial growth step without the need for bandgap tuning. This work demonstrates the potential of InAsSb nanowires for multispectral photodetectors and sensor arrays in the short-wavelength IR region.

  14. Analysis of polytype stability in PVT grown silicon carbide single crystal using competitive lattice model Monte Carlo simulations

    Directory of Open Access Journals (Sweden)

    Hui-Jun Guo

    2014-09-01

    Full Text Available Polytype stability is very important for high quality SiC single crystal growth. However, the growth conditions for the 4H, 6H and 15R polytypes are similar, and the mechanism of polytype stability is not clear. The kinetics aspects, such as surface-step nucleation, are important. The kinetic Monte Carlo method is a common tool to study surface kinetics in crystal growth. However, the present lattice models for kinetic Monte Carlo simulations cannot solve the problem of the competitive growth of two or more lattice structures. In this study, a competitive lattice model was developed for kinetic Monte Carlo simulation of the competition growth of the 4H and 6H polytypes of SiC. The site positions are fixed at the perfect crystal lattice positions without any adjustment of the site positions. Surface steps on seeds and large ratios of diffusion/deposition have positive effects on the 4H polytype stability. The 3D polytype distribution in a physical vapor transport method grown SiC ingot showed that the facet preserved the 4H polytype even if the 6H polytype dominated the growth surface. The theoretical and experimental results of polytype growth in SiC suggest that retaining the step growth mode is an important factor to maintain a stable single 4H polytype during SiC growth.

  15. Electrical and functional characterisation with single chips and module prototypes of the 1.2 Gb/s serial data link of the monolithic active pixel sensor for the upgrade of the ALICE Inner Tracking System

    CERN Document Server

    Bonora, Matthias; Aglieri Rinella, Gianluca; Hillemanns, Hartmut; Kim, Daehyeok; Kugathasan, Thanushan; Lattuca, Alessandra; Mazza, Giovanni; Sielewicz, Krzysztof Marek; Snoeys, Walter

    2017-01-01

    The upgrade of the ALICE Inner Tracking System uses a newly developed monolithic active pixel sensor (ALPIDE) which will populate seven tracking layers surrounding the interaction point. Chips communicate with the readout electronics using a 1.2 Gb/s data link and a 40 Mb/s bidirectional control link. Event data are transmitted to the readout electronics over microstrips on a Flexible Printed Circuit and a 6 m long twinaxial cable. This paper outlines the characterisation effort for assessing the Data Transmission Unit performance of single sensors and prototypes of the detector modules. It describes the different prototypes used, the test system and procedures, and results of laboratory and irradiation tests.

  16. On-chip multicomponent system made with an InGaN directional coupler.

    Science.gov (United States)

    Zhang, Fenghua; Shi, Zheng; Gao, Xumin; Qin, Chuan; Zhang, Shuai; Jiang, Yan; Wu, Fan; Wang, Yongjin

    2018-04-15

    An on-chip multicomponent system is implemented on a III-nitride-on-silicon platform by integrating a transmitter, InGaN waveguide, InGaN directional coupler, and receivers onto a single chip. The transmitter and the receiver share an identical InGaN/GaN multiple-quantum-well (MQW) diode structure and are produced by using the same wafer-level process flow. The receiver sensitively responds to the short-wavelength half of the emission spectrum of the transmitter, thus realizing the multicomponent system with the capability for inplane light communication. A SiO 2 isolation layer is employed to decrease the p-n junction capacitance, thus improving the modulation rate without modifying the MQW structure. The wire-bonded monolithic multicomponent system experimentally demonstrates inplane data transmission at 80 Mbps and spatial light communication at 100 Mbps, paving the way for diverse applications from on-chip power monitoring to inplane light communication in the visible light spectrum.

  17. A design of a valid signal selecting and position decoding ASIC for PET using silicon photomultipliers

    Science.gov (United States)

    Cho, M.; Lim, K.-t.; Kim, H.; Yeom, J.-y.; Kim, J.; Lee, C.; Choi, H.; Cho, G.

    2017-01-01

    In most cases, a PET system has numerous electrical components and channel circuits and thus it would rather be a bulky product. Also, most existing systems receive analog signals from detectors which make them vulnerable to signal distortions. For these reasons, channel reduction techniques are important. In this work, an ASIC for PET module is being proposed. An ASIC chip for 16 PET detector channels, VSSPDC, has been designed and simulated. The main function of the chip is 16-to-1 channel reduction, i.e., finding the position of only the valid signals, signal timing, and magnitudes in all 16 channels at every recorded event. The ASIC comprises four of 4-channel modules and a 2nd 4-to-1 router. A single channel module comprises a transimpedance amplifier for the silicon photomultipliers, dual comparators with high and low level references, and a logic circuitry. While the high level reference was used to test the validity of the signal, the low level reference was used for the timing. The 1-channel module of the ASIC produced an energy pulse by time-over-threshold method and it also produced a time pulse with a fixed delayed time. Since the ASIC chip outputs only a few digital pulses and does not require an external clock, it has an advantage over noise properties. The cadence simulation showed the good performance of the chip as designed.

  18. A design of a valid signal selecting and position decoding ASIC for PET using silicon photomultipliers

    International Nuclear Information System (INIS)

    Cho, M.; Lim, K.-T.; Kim, J.; Lee, C.; Cho, G.; Kim, H.; Yeom, J.-Y.; Choi, H.

    2017-01-01

    In most cases, a PET system has numerous electrical components and channel circuits and thus it would rather be a bulky product. Also, most existing systems receive analog signals from detectors which make them vulnerable to signal distortions. For these reasons, channel reduction techniques are important. In this work, an ASIC for PET module is being proposed. An ASIC chip for 16 PET detector channels, VSSPDC, has been designed and simulated. The main function of the chip is 16-to-1 channel reduction, i.e., finding the position of only the valid signals, signal timing, and magnitudes in all 16 channels at every recorded event. The ASIC comprises four of 4-channel modules and a 2 nd 4-to-1 router. A single channel module comprises a transimpedance amplifier for the silicon photomultipliers, dual comparators with high and low level references, and a logic circuitry. While the high level reference was used to test the validity of the signal, the low level reference was used for the timing. The 1-channel module of the ASIC produced an energy pulse by time-over-threshold method and it also produced a time pulse with a fixed delayed time. Since the ASIC chip outputs only a few digital pulses and does not require an external clock, it has an advantage over noise properties. The cadence simulation showed the good performance of the chip as designed.

  19. Performance of the CLAS12 Silicon Vertex Tracker modules

    Energy Technology Data Exchange (ETDEWEB)

    Antonioli, M.A.; Boiarinov, S.; Bonneau, P.; Elouadrhiri, L.; Eng, B. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Gotra, Y., E-mail: gotra@jlab.org [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Kurbatov, E. [Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow (Russian Federation); Leffel, M.; Mandal, S.; McMullen, M. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Merkin, M. [Skobeltsyn Institute of Nuclear Physics, Moscow State University, Moscow (Russian Federation); Raydo, B.; Teachey, W. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States); Tucker, R. [Arizona State University, Tempe, AZ (United States); Ungaro, M.; Yegneswaran, A.; Ziegler, V. [Thomas Jefferson National Accelerator Facility, Newport News, VA (United States)

    2013-12-21

    For the 12 GeV upgrade, the CLAS12 experiment has designed a Silicon Vertex Tracker (SVT) using single sided microstrip sensors fabricated by Hamamatsu. The sensors have graded angle design to minimize dead areas and a readout pitch of 156μm, with intermediate strip. Double sided SVT module hosts three daisy-chained sensors on each side with a full strip length of 33 cm. There are 512 channels per module read out by four Fermilab Silicon Strip Readout (FSSR2) chips featuring data driven architecture, mounted on a rigid-flex hybrid. Modules are assembled on the barrel using unique cantilevered geometry to minimize the amount of material in the tracking volume. Design and performance of the SVT modules are presented, focusing on results of electrical measurements. -- Highlights: •A Silicon Vertex Tracker has been designed for the central tracker of the CLAS12 experiment. •Using cantilevered module geometry allows minimizing amount of material in the tracking volume. •A dedicated Hybrid Flex Circuit Board has been developed to read out double sided module. •Module performance meets design goals of the CLAS12 Central Tracker.

  20. Diamond and silicon pixel detectors in high radiation environments

    Energy Technology Data Exchange (ETDEWEB)

    Tsung, Jieh-Wen

    2012-10-15

    Diamond pixel detector is a promising candidate for tracking of collider experiments because of the good radiation tolerance of diamond. The diamond pixel detector must withstand the radiation damage from 10{sup 16} particles per cm{sup 2}, which is the expected total fluence in High Luminosity Large Hadron Collider. The performance of diamond and silicon pixel detectors are evaluated in this research in terms of the signal-to-noise ratio (SNR). Single-crystal diamond pixel detectors with the most recent readout chip ATLAS FE-I4 are produced and characterized. Based on the results of the measurement, the SNR of diamond pixel detector is evaluated as a function of radiation fluence, and compared to that of planar-silicon ones. The deterioration of signal due to radiation damage is formulated using the mean free path of charge carriers in the sensor. The noise from the pixel readout circuit is simulated and calculated with leakage current and input capacitance to the amplifier as important parameters. The measured SNR shows good agreement with the calculated and simulated results, proving that the performance of diamond pixel detectors can exceed the silicon ones if the particle fluence is more than 10{sup 15} particles per cm{sup 2}.

  1. On-chip optical processing

    Science.gov (United States)

    Motamedi, M. Edward; Wu, Ming C.; Pister, Kristofer S. J.

    1996-09-01

    Microoptical components, such as diffractive and refractive microlenses, micromirrors, beam splitter and beam combining have recently received considerable attention in the optics R&D centers and finally in the manufacturing community. This achievement is due to MEM technology that demonstrated major improvements in overall performance/cost of optical systems while offering the possibility of relatively rapid transition to products for military, industrial and consumer markets. Because of these technology advances, an industrial infrastructure is rapidly becoming established to provide combining microoptical components and MEM-based microactuators for on-chip optical processing. Optical systems that once were considered to be impractical due to the limitations of bulk optics can now easily be designed and fabricated with all required optical paths, signal conditioning, and electronic controls, integrated on a single chip. On-chip optical processing will enhance the performance of devices such as focal plane optical concentrator, smart actuators, color separation, beam shaping, FDDI switch, digital micromirror devices (DMDs), and miniature optical scanners. In this paper we review advances in microoptical components developed at Rockwell Science Center. We also review the potential of on-chip optical processing and recent achievement of free-space integrated optics and microoptical bench components developed at UCLA, and DMDs developed at Texas Instruments.

  2. PHYSICS: Toward Atom Chips.

    Science.gov (United States)

    Fortágh, József; Zimmermann, Claus

    2005-02-11

    As a novel approach for turning the peculiar features of quantum mechanics into practical devices, researchers are investigating the use of ultracold atomic clouds above microchips. Such "atom chips" may find use as sensitive probes for gravity, acceleration, rotation, and tiny magnetic forces. In their Perspective, Fortagh and Zimmermann discuss recent advances toward creating atom chips, in which current-carrying conductors in the chips create magnetic microtraps that confine the atomic clouds. Despite some intrinsic limits to the performance of atom chips, existing technologies are capable of producing atom chips, and many possibilities for their construction remain to be explored.

  3. Experimental Observation of Quantum Confinement Effect in and Silicon Nanowire Field-Effect Transistors and Single-Electron/Hole Transistors Operating at Room Temperature

    Science.gov (United States)

    Suzuki, Ryota; Nozue, Motoki; Saraya, Takuya; Hiramoto, Toshiro

    2013-10-01

    The quantum confinement effect (QCE) in ultranarrow silicon nanowire channel field-effect transistors (FETs) as well as single-electron/hole transistors (SET/SHTs) operating at room temperature is intensively investigated for the optimization of device design and fabrication. By adopting a “shared channel” structure with the directions of and , a carrier-dependent QCE is systematically examined. It is found that nanowire pFETs exhibit a smaller threshold voltage (Vth) variability due to a weaker QCE, while nFETs and n/pFETs show comparable Vth variabilities coming from the QCE. It is also found that only SETs exhibit clear Coulomb oscillations in the case of the channel, suggesting the formation of higher tunnel barriers than SHTs. On the other hand, SHTs show undesirable multidot behavior in spite of their comparable QCEs for electrons and holes. It is concluded that -directed nanowire channel SETs and n/pFETs are suitable for the integration of CMOS and SETs.

  4. Silicon-Vacancy Spin Qubit in Diamond: A Quantum Memory Exceeding 10 ms with Single-Shot State Readout.

    Science.gov (United States)

    Sukachev, D D; Sipahigil, A; Nguyen, C T; Bhaskar, M K; Evans, R E; Jelezko, F; Lukin, M D

    2017-12-01

    The negatively charged silicon-vacancy (SiV^{-}) color center in diamond has recently emerged as a promising system for quantum photonics. Its symmetry-protected optical transitions enable the creation of indistinguishable emitter arrays and deterministic coupling to nanophotonic devices. Despite this, the longest coherence time associated with its electronic spin achieved to date (∼250  ns) has been limited by coupling to acoustic phonons. We demonstrate coherent control and suppression of phonon-induced dephasing of the SiV^{-} electronic spin coherence by 5 orders of magnitude by operating at temperatures below 500 mK. By aligning the magnetic field along the SiV^{-} symmetry axis, we demonstrate spin-conserving optical transitions and single-shot readout of the SiV^{-} spin with 89% fidelity. Coherent control of the SiV^{-} spin with microwave fields is used to demonstrate a spin coherence time T_{2} of 13 ms and a spin relaxation time T_{1} exceeding 1 s at 100 mK. These results establish the SiV^{-} as a promising solid-state candidate for the realization of quantum networks.

  5. Threshold voltage variation depending on single grain boundary and stored charges in an adjacent cell for vertical silicon–oxide–nitride–oxide–silicon NAND flash memory

    Science.gov (United States)

    Oh, Hyeongwan; Kim, Jiwon; Baek, Rock-Hyun; Lee, Jeong-Soo

    2018-04-01

    The effects of single grain boundary (SGB) position and stored electron charges in an adjacent cell in silicon–oxide–nitride–oxide–silicon (SONOS) structures on the variations of threshold voltage (V th) were investigated using technology computer-aided design (TCAD) simulation. As the bit line voltage increases, the SGB position causing the maximum V th variation was shifted from the center to the source side in the channel, owing to the drain-induced grain barrier lowering effect. When the SGB is located in the spacer region, the potential interaction from both the SGB and the stored electron charges in the adjacent cell becomes significant and thus resulting in larger V th variation. In contrast, when the SGB is located at the center of the channel, the peak position of potential barrier is shifted to the center, so that the influence of the adjacent cell is diminished. As the gate length is scaled down to 20 nm, the influence of stored charges in adjacent cells becomes significant, resulting in larger V th variations.

  6. Multi-layer microfluidic glass chips for microanalytical applications

    NARCIS (Netherlands)

    Daridon, Antoine; Fascio, Valia; Lichtenberg, Jan; Wütrich, Rolf; Langen, Hans; Verpoorte, Elisabeth; De Rooij, Nico F.

    2001-01-01

    A new, versatile architecture is presented for microfluidic devices made entirely from glass, for use with reagents which would prove highly corrosive for silicon. Chips consist of three layers of glass wafers bonded together by fusion bonding. On the inside wafer faces a network of microfluidic

  7. Detector and Front-end electronics for ALICE and STAR silicon strip layers

    CERN Document Server

    Arnold, L; Coffin, J P; Guillaume, G; Higueret, S; Jundt, F; Kühn, C E; Lutz, Jean Robert; Suire, C; Tarchini, A; Berst, D; Blondé, J P; Clauss, G; Colledani, C; Deptuch, G; Dulinski, W; Hu, Y; Hébrard, L; Kucewicz, W; Boucham, A; Bouvier, S; Ravel, O; Retière, F

    1998-01-01

    Detector modules consisting of Silicon Strip Detector (SSD) and Front End Electronics (FEE) assembly have been designed in order to provide the two outer layers of the ALICE Inner Tracker System (ITS) [1] as well as the outer layer of the STAR Silicon Vertex Tracker (SVT) [2]. Several prototypes have beenproduced and tested in the SPS and PS beam at CERN to validate the final design. Double-sided, AC-coupled SSD detectors provided by two different manufacturers and also a pair of single-sided SSD have been asssociated to new low-power CMOS ALICE128C ASIC chips in a new detector module assembly. The same detectors have also been associated to current Viking electronics for reference purpose. These prototype detector modules are described and some first results are presented.

  8. A Medipix2-based imaging system for digital mammography with silicon pixel detectors

    CERN Document Server

    Bisogni, M G; Fantacci, M E; Mettivier, G; Montesi, M C; Novelli, M; Quattrocchi, M; Rosso, V; Russo, P; Stefanini, A

    2004-01-01

    In this paper we present the first tests of a digital imaging system based on a silicon pixel detector bump-bonded to an integrated circuit operating in single photon counting mode. The X-rays sensor is a 300 mu m thick silicon, 14 by 14 mm/sup 2/, upon which a matrix of 256 * 256 pixels has been built. The read-out chip, named MEDIPIX2, has been developed at CERN within the MEDIPIX2 Collaboration and it is composed by a matrix of 256 * 256 cells, 55 * 55 mu m/sup 2/. The spatial resolution properties of the system have been assessed by measuring the square wave resolution function (SWRF) and first images of a standard mammographic phantom were acquired using a radiographic tube in the clinical irradiation condition. (5 refs).

  9. Three-dimensional collimation of in-plane-propagating light using silicon micromachined mirror

    Science.gov (United States)

    Sabry, Yasser M.; Khalil, Diaa; Saadany, Bassam; Bourouina, Tarik

    2014-03-01

    We demonstrate light collimation of single-mode optical fibers using deeply-etched three-dimensional curved micromirror on silicon chip. The three-dimensional curvature of the mirror is controlled by a process combining deep reactive ion etching and isotropic etching of silicon. The produced surface is astigmatic with out-of-plane radius of curvature that is about one half the in-plane radius of curvature. Having a 300-μm in-plane radius and incident beam inplane inclined with an angle of 45 degrees with respect to the principal axis, the reflected beam is maintained stigmatic with about 4.25 times reduction in the beam expansion angle in free space and about 12-dB reduction in propagation losses, when received by a limited-aperture detector.

  10. 229 nm UV LEDs on aluminum nitride single crystal substrates using p-type silicon for increased hole injection

    Science.gov (United States)

    Liu, Dong; Cho, Sang June; Park, Jeongpil; Seo, Jung-Hun; Dalmau, Rafael; Zhao, Deyin; Kim, Kwangeun; Gong, Jiarui; Kim, Munho; Lee, In-Kyu; Albrecht, John D.; Zhou, Weidong; Moody, Baxter; Ma, Zhenqiang

    2018-02-01

    AlGaN based 229 nm light emitting diodes (LEDs), employing p-type Si to significantly increase hole injection, were fabricated on single crystal bulk aluminum nitride (AlN) substrates. Nitride heterostructures were epitaxially deposited by organometallic vapor phase epitaxy and inherit the low dislocation density of the native substrate. Following epitaxy, a p-Si layer is bonded to the heterostructure. LEDs were characterized both electrically and optically. Owing to the low defect density films, large concentration of holes from p-Si, and efficient hole injection, no efficiency droop was observed up to a current density of 76 A/cm2 under continuous wave operation and without external thermal management. An optical output power of 160 μW was obtained with the corresponding external quantum efficiency of 0.03%. This study demonstrates that by adopting p-type Si nanomembrane contacts as a hole injector, practical levels of hole injection can be realized in UV light-emitting diodes with very high Al composition AlGaN quantum wells, enabling emission wavelengths and power levels that were previously inaccessible using traditional p-i-n structures with poor hole injection efficiency.

  11. Silicon microreactors for measurements of catalytic activity

    DEFF Research Database (Denmark)

    Henriksen, Toke Riishøj

    . The aim of this study has been to determine appropriate dimensions for the reaction chamber in the microsystem. It has been found that 200μm diameter circular silicon pillars distributed in the chamber are effective in preventing cavity collapse in such grooves. In particular, the pillars allow anodic....... The reactors consist of a microchannel system etched in an oxidized silicon chip and sealed with a glass lid using anodic bonding. The chip design relies on a gas flow through the channel system and is designed for reactions at pressures at the order of 1 bar. A high sensitivity is obtained by directing...... the entire gas flow through the reaction zone to a mass spectrometer, thus ensuring that nearly all reaction products are present in the analyzed gas flow. An experimental study has been carried out of the conditions for cavity collapse during anodic bonding of wide, shallow grooves etched in silicon...

  12. Special Issue: The Silicon Age

    Science.gov (United States)

    Kittler, Martin; Yang, Deren

    2006-03-01

    The present issue of physica status solidi (a) contains a collection of articles about different aspects of current silicon research and applications, ranging from basic investigations of mono- and polycrystalline silicon materials and nanostructures to technologies for device fabrication in silicon photovoltaics, micro- and optoelectronics. Guest Editors are Martin Kittler and Deren Yang, the organizers of a recent Sino-German symposium held in Cottbus, Germany, 19-24 September 2005.The cover picture shows four examples of The Silicon Age: the structure of a thin film solar cell on low-cost SSP (silicon sheet from powder) substrate (upper left image) [1], a high-resolution transmission electron microscopy image and diffraction pattern of a single-crystalline Si nanowire (upper right) [2], a carrier lifetime map from an n-type multicrystalline silicon wafer after gettering by a grain boundary (lower left) [3], and a scanning acoustic microscopy image of a bonded 150 mm diameter wafer pair (upper right) [4].

  13. A contact-lens-shaped IC chip technology

    International Nuclear Information System (INIS)

    Liu, Ching-Yu; Yang, Frank; Teng, Chih-Chiao; Fan, Long-Sheng

    2014-01-01

    We report on novel contact-lens-shaped silicon integrated circuit chip technology for applications such as forming a conforming retinal prosthesis. This is achieved by means of patterning thin films of high residual stress on top of a shaped thin silicon substrate. Several strategies are employed to achieve curvatures of various amounts. Firstly, high residual stress on a thin film makes a thin chip deform into a designed three-dimensional shape. Also, a series of patterned stress films and ‘petal-shaped’ chips were fabricated and analyzed. Large curvatures can also be formed and maintained by the packaging process of bonding the chips to constraining elements such as thin-film polymer ring structures. As a demonstration, a complementary metal oxide semiconductor transistor (CMOS) image-sensing retina chip is made into a contact-lens shape conforming to a human eyeball 12.5 mm in radius. This non-planar and flexible chip technology provides a desirable device surface interface to soft tissues or non-planar bio surfaces and opens up many other possibilities for biomedical applications. (paper)

  14. Single-Crystalline InGaAs/InP Dense Micro-Pillar Forest on Poly-Silicon Substrates for Low-Cost High-Efficiency Solar Cells

    Energy Technology Data Exchange (ETDEWEB)

    Chang-Hasnain, Constance

    2015-05-04

    The ultimate goal of this project is to develop a photovoltaic system high conversion efficiency (>20%) using high quality III-V compound-based three-dimensional micro-structures on silicon and poly-silicon. Such a PV-system could be of very low cost due to minimum usages of III-V materials. This project will address the barriers that currently hamper the performance of solar cells based on three-dimensional micro-structures. To accomplish this goal the project is divided into 4 tasks, each dealing with a different aspect of the project: materials quality, micropillar growth control, light management, and pillar based solar cells. Materials Quality: the internal quantum efficiency (IQE) - by which is meant here the internal fluorescence yield - of the micro-pillars has to be increased. We aim at achieving an IQE of 45% by the end of the first year. By the end of the second year there will be a go-no-go milestone of 65% IQE. By the end of year 3 and 4 we aim to achieve 75% and 90% IQE, respectively. Micropillar growth control: dense forests of micropillars with high fill ratios need to be grown. Pillars within forests should show minimum variations in size. We aim at achieving fill ratios of 2%, 10%, >15%, >20% in years 1, 2, 3, and 4, respectively. Variations in dimension should be minimized by site-controlled growth of pillars. By the end of year 1 we will aim at achieving site-controlled growth with > 15% yield. By end of year 2 the variation of critical pillar dimensions should be less than 25%. Light management: high light absorption in the spectral range of the sun has been to be demonstrated for the micropillar forests. By the end of year 1 we will employ FDTD simulation techniques to demonstrate that pillar forests with fill ratios <20% can achieve 99% light absorption. By end of year 2 our original goal was to demonstrate >85% absorption. By end of year 3 > 90% absorption should be demonstrated. Pillar based solar cells: devices will be studied to explore

  15. Silicon nitride waveguide platform for fluorescence microscopy of living cells.

    Science.gov (United States)

    Tinguely, Jean-Claude; Helle, Øystein Ivar; Ahluwalia, Balpreet Singh

    2017-10-30

    Waveguide chip-based microscopy reduces the complexity of total internal reflection fluorescence (TIRF) microscopy, and adds features like large field of view illumination, decoupling of illumination and collection path and easy multimodal imaging. However, for the technique to become widespread there is a need of low-loss and affordable waveguides made of high-refractive index material. Here, we develop and report a low-loss silicon nitride (Si 3 N 4 ) waveguide platform for multi-color TIRF microscopy. Single mode conditions at visible wavelengths (488-660 nm) were achieved using shallow rib geometry. To generate uniform excitation over appropriate dimensions waveguide bends were used to filter-out higher modes followed by adiabatic tapering. Si 3 N 4 material is finally shown to be biocompatible for growing and imaging living cells.

  16. The artificial synapse chip: From proteins to prostheses

    Science.gov (United States)

    Peterman, Mark Charles

    Most retinal prostheses use an electric field to stimulate retinal circuitry, yet information transfer in the retina is primarily through neurotransmitters. To address this difference, this thesis describes a proof of concept retinal interface based on localized chemical delivery. This system, the Artificial Synapse Chip, is based on a 5 mum aperture in a silicon nitride membrane overlying a microfluidic channel. The effectiveness of this interface is demonstrated by ejecting bradykinin on cultured excitable cells. Even with manual fluidic control, the relationship between the extent of stimulation and concentration is linear, providing enough control to limit stimulation to individual cells. A neurotransmitter-based prosthesis will require advanced fluidic control. This thesis reports the use of electroosmosis to eject or withdraw fluid from an aperture in a channel wall. This effect is demonstrated experimentally, and numerically, using a finite-element method. Our primary device is a prototype interface with four individually addressable apertures in a 2 x 2 array. Using this array, we demonstrate stimulation of both PC12 and retinal ganglion cells. This demonstration of localized chemical stimulation of excitable cells illustrates the potential of this technology for retinal prostheses. As a final application of the Artificial Synapse Chip, we applied the concept to lipid bilayer membranes and membrane-bound proteins. Not only are membrane-bound proteins crucial to the function of biological synapses, but also are important from a technological point of view. In this thesis, we use a Langmuir-Blodgett technique to producing lipid bilayers across apertures in a modified version of the Artificial Synapse Chip. These bilayers display many of the same properties as bilayers across apertures in Teflon films. In addition, these bilayers remain unbroken at transmembrane potentials over +/-400 mV, higher than Teflon-supported bilayers. We also demonstrate single

  17. Crystal growth and evaluation of silicon for VLSI and ULSI

    CERN Document Server

    Eranna, Golla

    2014-01-01

    PrefaceAbout the AuthorIntroductionSilicon: The SemiconductorWhy Single CrystalsRevolution in Integrated Circuit Fabrication Technology and the Art of Device MiniaturizationUse of Silicon as a SemiconductorSilicon Devices for Boolean ApplicationsIntegration of Silicon Devices and the Art of Circuit MiniaturizationMOS and CMOS Devices for Digital ApplicationsLSI, VLSI, and ULSI Circuits and ApplicationsSilicon for MEMS ApplicationsSummaryReferencesSilicon: The Key Material for Integrated Circuit Fabrication TechnologyIntroductionPreparation of Raw Silicon MaterialMetallurgical-Grade SiliconPuri

  18. Ultrasmall silicon quantum dots

    NARCIS (Netherlands)

    Zwanenburg, F.A.; Van Loon, A.A.; Steele, G.A.; Rijmenam, C.E.W.M.; Balder, T.; Fang, Y.; Lieber, C.M.; Kouwenhoven, L.P.

    2009-01-01

    We report the realization of extremely small single quantum dots in p-type silicon nanowires, defined by Schottky tunnel barriers with Ni and NiSi contacts. Despite their ultrasmall size the NiSi–Si–NiSi nanowire quantum dots readily allow spectroscopy of at least ten consecutive holes, and

  19. Soliton trapping and comb self-referencing in a single microresonator with χ(2) and χ(3) nonlinearities.

    Science.gov (United States)

    Xue, Xiaoxiao; Zheng, Xiaoping; Weiner, Andrew M

    2017-10-15

    A shaped doublet pump pulse is proposed for a simultaneous octave-spanning soliton Kerr frequency comb generation and second-harmonic conversion in a single microresonator. The temporal soliton in the cavity is trapped atop a doublet-pulse pedestal, resulting in a greatly expanded soliton region compared to that with a general Gaussian pulse pump. The possibility of single-microresonator comb self-referencing in a single silicon nitride microring that can facilitate compact on-chip optical clocks is demonstrated via simulation.

  20. Monolithic nanoscale photonics-electronics integration in silicon and other group IV elements

    CERN Document Server

    Radamson, Henry

    2014-01-01

    Silicon technology is evolving rapidly, particularly in board-to-board or chip-to chip applications. Increasingly, the electronic parts of silicon technology will carry out the data processing, while the photonic parts take care of the data communication. For the first time, this book describes the merging of photonics and electronics in silicon and other group IV elements. It presents the challenges, the limitations, and the upcoming possibilities of these developments. The book describes the evolution of CMOS integrated electronics, status and development, and the fundamentals of silicon p