WorldWideScience

Sample records for single nanowire tunnel

  1. High-Performance Single Nanowire Tunnel Diodes

    DEFF Research Database (Denmark)

    Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

    2010-01-01

    We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27...

  2. High-performance single nanowire tunnel diodes.

    Science.gov (United States)

    Wallentin, Jesper; Persson, Johan M; Wagner, Jakob B; Samuelson, Lars; Deppert, Knut; Borgström, Magnus T

    2010-03-10

    We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27.6 at liquid helium temperature. These sub-100-nm-diameter structures are promising components for solar cells as well as electronic applications.

  3. High Performance Single Nanowire Tunnel Diodes

    DEFF Research Database (Denmark)

    Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

    Semiconductor nanowires (NWs) have emerged as a promising technology for future electronic and optoelectronic devices. Epitaxial growth of III-V materials on Si substrates have been demonstrated, allowing for low-cost production. As the lattice matching requirements are much less strict than...... for planar growth, many new materials combinations can be grown in a single NW. This opens up exciting opportunities for NW-based high-performance solar cells, where previously inaccessible materials combinations can now be chosen to match the solar spectrum. A key component of a multi-junction solar cell...... NWs were contacted in a NW-FET setup. Electrical measurements at room temperature display typical tunnel diode behavior, with a Peak-to-Valley Current Ratio (PVCR) as high as 8.2 and a peak current density as high as 329 A/cm2. Low temperature measurements show improved PVCR of up to 27.6....

  4. Electroluminescence from single nanowires by tunnel injection: an experimental study

    OpenAIRE

    Zimmler, Mariano A.; Bao, Jiming; Shalish, Ilan; Yi, Wei; Yoon, Joonah; Narayanamurti, Venkatesh; Capasso, Federico

    2007-01-01

    We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel-injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the stan...

  5. Electroluminescence from single nanowires by tunnel injection: an experimental study

    Science.gov (United States)

    Zimmler, Mariano A.; Bao, Jiming; Shalish, Ilan; Yi, Wei; Yoon, Joonah; Narayanamurti, Venkatesh; Capasso, Federico

    2007-06-01

    We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure.

  6. Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

    Energy Technology Data Exchange (ETDEWEB)

    Llobet, Jordi; Pérez-Murano, Francesc, E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Institut de Microelectrònica de Barcelona (IMB-CNM CSIC), Campus UAB, E-08193 Bellaterra, Catalonia (Spain); Krali, Emiljana; Wang, Chen; Jones, Mervyn E.; Durrani, Zahid A. K., E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ (United Kingdom); Arbiol, Jordi [Institució Catalana de Recerca i Estudis Avançats (ICREA) and Institut Català de Nanociència i Nanotecnologia (ICN2), Campus UAB, 08193 Bellaterra, Catalonia (Spain); CELLS-ALBA Synchrotron Light Facility, 08290 Cerdanyola, Catalonia (Spain)

    2015-11-30

    Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.

  7. Nanowire resonant tunneling diodes

    Science.gov (United States)

    Björk, M. T.; Ohlsson, B. J.; Thelander, C.; Persson, A. I.; Deppert, K.; Wallenberg, L. R.; Samuelson, L.

    2002-12-01

    Semiconductor heterostructures and their implementation into electronic and photonic devices have had tremendous impact on science and technology. In the development of quantum nanoelectronics, one-dimensional (1D) heterostructure devices are receiving a lot of interest. We report here functional 1D resonant tunneling diodes obtained via bottom-up assembly of designed segments of different semiconductor materials in III/V nanowires. The emitter, collector, and the central quantum dot are made from InAs and the barrier material from InP. Ideal resonant tunneling behavior, with peak-to-valley ratios of up to 50:1 and current densities of 1 nA/μm2 was observed at low temperatures.

  8. Tunneling and Transport in Nanowires

    International Nuclear Information System (INIS)

    Goldman, Allen M.

    2016-01-01

    The goal of this program was to study new physical phenomena that might be relevant to the performance of conductive devices and circuits of the smallest realizable feature sizes possible using physical rather than biological techniques. Although the initial scientific work supported involved the use of scanning tunneling microscopy and spectroscopy to ascertain the statistics of the energy level distribution of randomly sized and randomly shaped quantum dots, or nano-crystals, the main focus was on the investigation of selected properties, including superconductivity, of conducting and superconducting nanowires prepared using electron-beam-lithography. We discovered a magnetic-field-restoration of superconductivity in out-of-equilibrium nanowires driven resistive by current. This phenomenon was explained by the existence of a state in which dissipation coexisted with nonvanishing superconducting order. We also produced ultra-small superconducting loops to study a predicted anomalous fluxoid quantization, but instead, found a magnetic-field-dependent, high-resistance state, rather than superconductivity. Finally, we developed a simple and controllable nanowire in an induced charged layer near the surface of a masked single-crystal insulator, SrTiO 3 . The layer was induced using an electric double layer transistor employing an ionic liquid (IL). The transport properties of the induced nanowire resembled those of collective electronic transport through an array of quantum dots.

  9. Tunneling and Transport in Nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Goldman, Allen M. [Univ. of Minnesota, Minneapolis, MN (United States)

    2016-08-16

    The goal of this program was to study new physical phenomena that might be relevant to the performance of conductive devices and circuits of the smallest realizable feature sizes possible using physical rather than biological techniques. Although the initial scientific work supported involved the use of scanning tunneling microscopy and spectroscopy to ascertain the statistics of the energy level distribution of randomly sized and randomly shaped quantum dots, or nano-crystals, the main focus was on the investigation of selected properties, including superconductivity, of conducting and superconducting nanowires prepared using electron-beam-lithography. We discovered a magnetic-field-restoration of superconductivity in out-of-equilibrium nanowires driven resistive by current. This phenomenon was explained by the existence of a state in which dissipation coexisted with nonvanishing superconducting order. We also produced ultra-small superconducting loops to study a predicted anomalous fluxoid quantization, but instead, found a magnetic-field-dependent, high-resistance state, rather than superconductivity. Finally, we developed a simple and controllable nanowire in an induced charged layer near the surface of a masked single-crystal insulator, SrTiO3. The layer was induced using an electric double layer transistor employing an ionic liquid (IL). The transport properties of the induced nanowire resembled those of collective electronic transport through an array of quantum dots.

  10. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  11. Structural and tunneling properties of Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2013-12-06

    We investigate the electronic structure and electron transport properties of Si nanowires attached to Au electrodes from first principles using density functional theory and the nonequilibrium Green\\'s function method. We systematically study the dependence of the transport properties on the diameter of the nanowires, on the growth direction, and on the length. At the equilibrium Au-nanowire distance we find strong electronic coupling between the electrodes and nanowires, which results in a low contact resistance. With increasing nanowire length we study the transition from metallic to tunneling conductance for small applied bias. For the tunneling regime we investigate the decay of the conductance with the nanowire length and rationalize the results using the complex band structure of the pristine nanowires. The conductance is found to depend strongly on the growth direction, with nanowires grown along the ⟨110⟩ direction showing the smallest decay with length and the largest conductance and current.

  12. A Heterojunction Design of Single Layer Hole Tunneling ZnO Passivation Wrapping around TiO2Nanowires for Superior Photocatalytic Performance

    Science.gov (United States)

    Ghobadi, Amir; Ulusoy, T. Gamze; Garifullin, Ruslan; Guler, Mustafa O.; Okyay, Ali K.

    2016-01-01

    Nanostructured hybrid heterojunctions have been studied widely for photocatalytic applications due to their superior optical and structural properties. In this work, the impact of angstrom thick atomic layer deposited (ALD) ZnO shell layer on photocatalytic activity (PCA) of hydrothermal grown single crystalline TiO2 nanowires (NWs) is systematically explored. We showed that a single cycle of ALD ZnO layer wrapped around TiO2 NWs, considerably boosts the PCA of the heterostructure. Subsequent cycles, however, gradually hinder the photocatalytic activity (PCA) of the TiO2 NWs. Various structural, optical, and transient characterizations are employed to scrutinize this unprecedented change. We show that a single atomic layer of ZnO shell not only increases light harvesting capability of the heterostructure via extension of the absorption toward visible wavelengths, but also mitigates recombination probability of carriers through reduction of surface defects density and introduction of proper charge separation along the core-shell interface. Furthermore, the ultrathin ZnO shell layer allows a strong contribution of the core (TiO2) valence band holes through tunneling across the ultrathin interface. All mechanisms responsible for this enhanced PCA of heterostructure are elucidated and corresponding models are proposed. PMID:27464476

  13. Simulation of nanowire tunneling transistors: From the Wentzel-Kramers-Brillouin approximation to full-band phonon-assisted tunneling

    Science.gov (United States)

    Luisier, Mathieu; Klimeck, Gerhard

    2010-04-01

    Nanowire band-to-band tunneling field-effect transistors (TFETs) are simulated using the Wentzel-Kramers-Brillouin (WKB) approximation and an atomistic, full-band quantum transport solver including direct and phonon-assisted tunneling (PAT). It is found that the WKB approximation properly works if one single imaginary path connecting the valence band (VB) and the conduction band (CB) dominates the tunneling process as in direct band gap semiconductors. However, PAT is essential in Si and Ge nanowire TFETs where multiple, tightly-coupled, imaginary paths exist between the VB and the CB.

  14. Single Electron Tunneling

    International Nuclear Information System (INIS)

    Ruggiero, Steven T.

    2005-01-01

    Financial support for this project has led to advances in the science of single-electron phenomena. Our group reported the first observation of the so-called ''Coulomb Staircase'', which was produced by tunneling into ultra-small metal particles. This work showed well-defined tunneling voltage steps of width e/C and height e/RC, demonstrating tunneling quantized on the single-electron level. This work was published in a now well-cited Physical Review Letter. Single-electron physics is now a major sub-field of condensed-matter physics, and fundamental work in the area continues to be conducted by tunneling in ultra-small metal particles. In addition, there are now single-electron transistors that add a controlling gate to modulate the charge on ultra-small photolithographically defined capacitive elements. Single-electron transistors are now at the heart of at least one experimental quantum-computer element, and single-electron transistor pumps may soon be used to define fundamental quantities such as the farad (capacitance) and the ampere (current). Novel computer technology based on single-electron quantum dots is also being developed. In related work, our group played the leading role in the explanation of experimental results observed during the initial phases of tunneling experiments with the high-temperature superconductors. When so-called ''multiple-gap'' tunneling was reported, the phenomenon was correctly identified by our group as single-electron tunneling in small grains in the material. The main focus throughout this project has been to explore single electron phenomena both in traditional tunneling formats of the type metal/insulator/particles/insulator/metal and using scanning tunneling microscopy to probe few-particle systems. This has been done under varying conditions of temperature, applied magnetic field, and with different materials systems. These have included metals, semi-metals, and superconductors. Amongst a number of results, we have

  15. Microstructural characterization of single-crystalline potassium hollandite nanowires

    International Nuclear Information System (INIS)

    Xu, C.Y.; Zhen, L.; Zhang, Q.; Tang, J.; Qin, L.-C.

    2008-01-01

    Single-crystalline potassium hollandite KTi 8 O 16.5 nanowires were synthesized by the molten salt method at 800 deg. C. Scanning electron microscopy observation shows that the nanowires are with octagonal cross-sections, and combined analyses of transmission electron microscopy and the electron diffraction results show that the terminated planes are angled 90 or 60 degrees to the growth direction, [001] crystallography direction. Ordering of the potassium cations in the tunnels was revealed by electron diffraction. The mechanism of one-dimensional growth of the nanowires was attributed to the oriented attachment mechanism

  16. Fabrication and characterization of semiconducting nanowires for tunnel field transistors

    Science.gov (United States)

    Vallett, Aaron Lee

    The scaling of traditional metal-oxide-semiconductor field-effect transistors (MOSFETs) is hitting a limit, not due to difficulties in fabricating short gate lengths, but rather to an ongoing power crisis. As channel lengths have been reduced power densities of integrated circuits have risen dramatically. While supply voltage scaling would alleviate many power concerns, the MOSFET structure fundamentally limits the amount that voltages can be reduced. Because MOSFET operation is governed by thermal emission of carriers over a potential barrier, the subthreshold swing from the off to on current is limited to a minimum of 60 mV/decade of current. Therefore, reductions in the supply voltage will degrade the on/off current ratio. The tunnel field-effect transistor (TFET) has emerged as a potential solution to these problems. Current is controlled by band-to-band tunneling through a barrier that is modulated by the gate, and subthreshold swings below 60 mV/dec. can be achieved. While TFET simulations are quite promising, subthreshold swings below 60 mV/dec. at technically relevant on-currents have yet to be demonstrated experimentally. Nanowire geometries and III-V semiconductor channel materials are predicted to improve TFET performance by increasing gate control and tunneling current. In this dissertation the fabrication of TFETs from semiconducting nanowires will be investigated. First, axially doped silicon (Si) nanowire in situ p-n junctions will be studied. By controlling the nanowire growth, separate p and n-type segments can be formed to create a rectifying junction. While as-grown nanowire junctions do not have the abruptness necessary to facilitate band-to-band tunneling, thermally oxidized nanowires are shown to have a p-n-n+ profile with an abrupt n-n+ junction. By gating the nanowires an abrupt electrostatically-doped p +- n+ junction can be formed that permits reverse-biased tunneling. These p-n-n+ nanowires will be integrated into a top-gated lateral TFET

  17. Silicon-germanium nanowire tunnel-FETs with homo- and heterostructure tunnel junctions

    Science.gov (United States)

    Richter, S.; Blaeser, S.; Knoll, L.; Trellenkamp, S.; Fox, A.; Schäfer, A.; Hartmann, J. M.; Zhao, Q. T.; Mantl, S.

    2014-08-01

    Experimental results on tunneling field-effect transistors (TFETs) based on strained SiGe on SOI nanowire arrays are presented. A heterostructure SiGe/Si TFET with a vertical tunnel junction consisting of an in situ doped SiGe source and a Si channel with a minimum inverse subthreshold slope of 90 mV/dec is demonstrated. An increase in tunneling area results in higher on-current. The in situ doped heterojunction TFET shows great improvement compared to a homojunction SiGe on SOI nanowire design with implanted junctions. Temperature dependent measurements and device simulations are performed in order to analyze the tunnel transport mechanism in the devices.

  18. Electrical Characterization of Vapor-Deposited Single CdS Nanowire

    Science.gov (United States)

    Fu, X. L.; Tang, W. H.; Li, L. H.

    In this work, we synthesized chromium-doped CdS nanowires by simple vapor deposition. And the current-voltage characteristics of single CdS nanowire have been studied. The results from electrical transport measurements on the field-effect transistors showed that the nanowire was an n-type semiconductor. In addition, the Au/CdS nanowire device exhibited clear diode-like behavior, and a thermally-assisted tunneling mechanism, which dominates the transport of carriers above the metal-semiconductor contact in the diode, was discussed in detail.

  19. Phonon-assisted Zener tunneling in a cylindrical nanowire transistor

    Science.gov (United States)

    Carrillo-Nuñez, H.; Magnus, Wim; Vandenberghe, William G.; Sorée, Bart; Peeters, François M.

    2013-05-01

    The tunneling current has been computed for a cylindrical nanowire tunneling field-effect transistor (TFET) with an all-round gate that covers the source region. Being the underlying mechanism, band-to-band tunneling, mediated by electron-phonon interaction, is pronouncedly affected by carrier confinement in the radial direction and, therefore, involves the self-consistent solution of the Schrödinger and Poisson equations. The latter has been accomplished by exploiting a non-linear variational principle within the framework of the modified local density approximation taking into account the nonparabolicity of both the valence band and conduction band in relatively thick wires. Moreover, while the effective-mass approximation might still provide a reasonable description of the conduction band in relatively thick wires, we have found that the nonparabolicity of the valence band needs to be included. As a major conclusion, it is observed that confinement effects in nanowire tunneling field-effect transistors have a stronger impact on the onset voltage of the tunneling current in comparison with planar TFETs. On the other hand, the value of the onset voltage is found to be overestimated when the valence band nonparabolicity is ignored.

  20. Optical Spectroscopy of Single Nanowires

    OpenAIRE

    Trägårdh, Johanna

    2008-01-01

    This thesis describes optical spectroscopy on III-V semiconductor nanowires. The nanowires were grown by metal-organic vapor phase epitaxy (MOVPE) and chemical beam epitaxy (CBE). Photoluminescence and photocurrent spectroscopy are used as tools to investigate issues such as the size of the band gap, the effects of surface states, and the charge carrier transport in core-shell nanowires. The band gap of InAs1-xPx nanowires with wurtzite crystal structure is measured as a function of ...

  1. A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection

    Science.gov (United States)

    Zimmler, Mariano A.; Bao, Jiming; Shalish, Ilan; Yi, Wei; Narayanamurti, Venkatesh; Capasso, Federico

    2007-10-01

    We present a systematic study of the current-voltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both semiconductors are n-type. A novel feature of this device is that by reversing the polarity of the applied voltage the luminescence can be selectively obtained from either the nanowire or the substrate. For one polarity of the applied voltage, ultraviolet (and visible) light is generated in the GaN nanowire, while for the opposite polarity infrared light is emitted from the Si substrate. We propose a model, which explains the key features of the data, based on electron tunnelling from the valence band of one semiconductor into the conduction band of the other semiconductor. For example, for one polarity of the applied voltage, given a sufficient potential energy difference between the two semiconductors, electrons can tunnel from the valence band of GaN into the Si conduction band. This process results in the creation of holes in GaN, which can recombine with conduction band electrons generating GaN band-to-band luminescence. A similar process applies under the opposite polarity for Si light emission. This device structure affords an additional experimental handle to the study of electroluminescence in single nanowires and, furthermore, could be used as a novel approach to two-colour light-emitting devices.

  2. Spin transport and Hanle effect in silicon nanowires using graphene tunnel barriers

    Science.gov (United States)

    van't Erve, O. M. J.; Friedman, A. L.; Li, C. H.; Robinson, J. T.; Connell, J.; Lauhon, L. J.; Jonker, B. T.

    2015-06-01

    Spin-based devices offer non-volatile, scalable, low power and reprogrammable functionality for emerging device technologies. Here we fabricate nanoscale spintronic devices with ferromagnetic metal/single-layer graphene tunnel barriers used to generate spin accumulation and spin currents in a silicon nanowire transport channel. We report the first observation of spin precession via the Hanle effect in both local three-terminal and non-local spin-valve geometries, providing a direct measure of spin lifetimes and confirmation of spin accumulation and pure spin transport. The use of graphene as the tunnel barrier provides a low-resistance area product contact and clean magnetic switching characteristics, because it smoothly bridges the nanowire and minimizes complicated magnetic domains that otherwise compromise the magnetic behaviour. Utilizing intrinsic two-dimensional layers such as graphene or hexagonal boron nitride as tunnel contacts on nanowires offers many advantages over conventional materials deposited by vapour deposition, enabling a path to highly scaled electronic and spintronic devices.

  3. A simple and controlled single electron transistor based on doping modulation in silicon nanowires

    OpenAIRE

    Hofheinz, M.; Jehl, X.; Sanquer, M.; Molas, G.; Vinet, M.; Deleonibus, S.

    2006-01-01

    A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel of the transistor is the Coulomb island at low temperature. Two silicon nitride spacers deposited on each side of the gate create a modulation of doping along the nanowire that creates tunnel barriers. Such barriers are fixed and controlled, like in metallic...

  4. Nanowire Tunnel Field Effect Transistors: Prospects and Pitfalls

    Science.gov (United States)

    Sylvia, Somaia Sarwat

    The tunnel field effect transistor (TFET) has the potential to operate at lower voltages and lower power than the field effect transistor (FET). The TFET can circumvent the fundamental thermal limit of the inverse subthreshold slope (S) by exploiting interband tunneling of non-equilibrium "cold" carriers. The conduction mechanism in the TFET is governed by band-to-band tunneling which limits the drive current. TFETs built with III-V materials like InAs and InSb can produce enough tunneling current because of their small direct bandgap. Our simulation results show that although they require highly degenerate source doping to support the high electric fields in the tunnel region, the devices achieve minimum inverse subthreshold slopes of 30 mV/dec. In subthreshold, these devices experience both regimes of voltage-controlled tunneling and cold-carrier injection. Numerical results based on a discretized 8-band k.p model are compared to analytical WKB theory. For both regular FETs and TFETs, direct channel tunneling dominates the leakage current when the physical gate length is reduced to 5 nm. Therefore, a survey of materials is performed to determine their ability to suppress the direct tunnel current through a 5 nm barrier. The tunneling effective mass gives the best indication of the relative size of the tunnel currents. Si gives the lowest overall tunnel current for both the conduction and valence band and, therefore, it is the optimum choice for suppressing tunnel current at the 5 nm scale. Our numerical simulation shows that the finite number, random placement, and discrete nature of the dopants in the source of an InAs nanowire (NW) TFET affect both the mean value and the variance of the drive current and the inverse subthreshold slope. The discrete doping model gives an average drive current and an inverse subthreshold slope that are less than those predicted from the homogeneous doping model. The doping density required to achieve a target drive current is

  5. Single conducting polymer nanowire based conductometric sensors

    Science.gov (United States)

    Bangar, Mangesh Ashok

    The detection of toxic chemicals, gases or biological agents at very low concentrations with high sensitivity and selectivity has been subject of immense interest. Sensors employing electrical signal readout as transduction mechanism offer easy, label-free detection of target analyte in real-time. Traditional thin film sensors inherently suffered through loss of sensitivity due to current shunting across the charge depleted/added region upon analyte binding to the sensor surface, due to their large cross sectional area. This limitation was overcome by use of nanostructure such as nanowire/tube as transducer where current shunting during sensing was almost eliminated. Due to their benign chemical/electrochemical fabrication route along with excellent electrical properties and biocompatibility, conducting polymers offer cost-effective alternative over other nanostructures. Biggest obstacle in using these nanostructures is lack of easy, scalable and cost-effective way of assembling these nanostructures on prefabricated micropatterns for device fabrication. In this dissertation, three different approaches have been taken to fabricate individual or array of single conducting polymer (and metal) nanowire based devices and using polymer by itself or after functionalization with appropriate recognition molecule they have been applied for gas and biochemical detection. In the first approach electrochemical fabrication of multisegmented nanowires with middle functional Ppy segment along with ferromagnetic nickel (Ni) and end gold segments for better electrical contact was studied. This multi-layered nanowires were used along with ferromagnetic contact electrode for controlled magnetic assembly of nanowires into devices and were used for ammonia gas sensing. The second approach uses conducting polymer, polypyrrole (Ppy) nanowires using simple electrophoretic alignment and maskless electrodeposition to anchor nanowire which were further functionalized with antibodies against

  6. Single-contact tunneling thermometry

    Science.gov (United States)

    Maksymovych, Petro

    2016-02-23

    A single-contact tunneling thermometry circuit includes a tunnel junction formed between two objects. Junction temperature gradient information is determined based on a mathematical relationship between a target alternating voltage applied across the junction and the junction temperature gradient. Total voltage measured across the junction indicates the magnitude of the target alternating voltage. A thermal gradient is induced across the junction. A reference thermovoltage is measured when zero alternating voltage is applied across the junction. An increasing alternating voltage is applied while measuring a thermovoltage component and a DC rectification voltage component created by the applied alternating voltage. The target alternating voltage is reached when the thermovoltage is nullified or doubled by the DC rectification voltage depending on the sign of the reference thermovoltage. Thermoelectric current and current measurements may be utilized in place of the thermovoltage and voltage measurements. The system may be automated with a feedback loop.

  7. Axial Ge/Si nanowire heterostructure tunnel FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory

    2010-01-01

    The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

  8. Controlled growth of single nanowires within a supported alumina template

    DEFF Research Database (Denmark)

    Vlad, A.; Mátéfi-Tempfli, M.; Faniel, S.

    2006-01-01

    A simple technique for fabricating single nanowires with well-defined position is presented. The process implies the use of a silicon nitride mask for selective electrochemical growth of the nanowires in a porous alumina template. We show that this method allows the realization of complex nanowire...

  9. Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

    2010-01-01

    Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure nanowires with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these nanowires for high-on currents and suppressed ambipolar behavior. Initial prototype devices resulted in a current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. These results demonstrate the potential of such asymmetric heterostructures (both in the semiconductor channel and metal-semiconductor barrier heights) for low-power and high performance electronics.

  10. Direct monolithic integration of vertical single crystalline octahedral molecular sieve nanowires on silicon

    Energy Technology Data Exchange (ETDEWEB)

    Carretero-Genevrier, Adrian [Institut des Nanotechnologies de Lyon (INL), UMR-CNRS 5270, Ecole Central de Lyon, Ecully (France); Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Sorbonne Univ., UPMC Univ. Paris 06, CNRS, College de France, Paris (France); Oro-Sole, Judith [Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Gazquez, Jaume [Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Magen, Cesar [Univ. de Zaragoza, Zaragoza (Spain); Miranda, Laura [Sorbonne Univ., UPMC Univ. Paris 06, CNRS, College de France, Paris (France); Puig, Teresa [Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Obradors, Xavier [Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain); Ferain, Etienne [Univ. Catholique de Louvain, Louvain-la-Neuve (Belgium); Sanchez, Clement [Sorbonne Univ., UPMC Univ. Paris 06, CNRS, College de France, Paris (France); Rodriguez-Carvajal, Juan [Institut Laue-Langevin, Grenoble Cedex (France); Mestres, Narcis [Institut de Ciencia de Materials de Barcelona ICMAB, Catalonia (Spain)

    2013-12-13

    We developed an original strategy to produce vertical epitaxial single crystalline manganese oxide octahedral molecular sieve (OMS) nanowires with tunable pore sizes and compositions on silicon substrates by using a chemical solution deposition approach. The nanowire growth mechanism involves the use of track-etched nanoporous polymer templates combined with the controlled growth of quartz thin films at the silicon surface, which allowed OMS nanowires to stabilize and crystallize. α-quartz thin films were obtained after thermal activated crystallization of the native amorphous silica surface layer assisted by Sr2+- or Ba2+-mediated heterogeneous catalysis in the air at 800 °C. These α-quartz thin films work as a selective template for the epitaxial growth of randomly oriented vertical OMS nanowires. Furthermore, the combination of soft chemistry and epitaxial growth opens new opportunities for the effective integration of novel technological functional tunneled complex oxides nanomaterials on Si substrates.

  11. Silicon Tunneling Field Effect Transistors with a Hemicylindrical Nanowire Channel for Ultra-Low Power Application

    Science.gov (United States)

    Park, Byung-Gook; Sun, Min-Chul; Kim, Sang Wan

    In order to decrease the threshold voltage while maintaining the OFF current low, reduction of the subthreshold swing is essential in field effect transistors (FETs). To reduce the subthreshold swing below 60 mV/decade, inter-band tunneling can be used for injection of carriers and the device that utilizes such a mechanism is tunneling field effect transistor (TFET). Silicon(Si) TFETs, which are favored due to their compatibility with currently dominant complementary metal-oxide-semiconductor (CMOS) technology, suffer from low ON current because of the relatively large bandgap of Si. The ON current of Si TFETs can be increased by field and area enhancement in a cylindrical nanowire channel. Numerical analysis has confirmed that the cylindrical channel structure shows significantly higher tunneling rate and wider tunneling area than the double gate structure. Si TFETs with a hemicylindrical nanowire channel are fabricated and characterized, and the effectiveness of nanowire channel approach is demonstrated.

  12. Single crystalline PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices.

    Science.gov (United States)

    Lin, Yung-Chen; Lu, Kuo-Chang; Wu, Wen-Wei; Bai, Jingwei; Chen, Lih J; Tu, K N; Huang, Yu

    2008-03-01

    We report the formation of PtSi nanowires, PtSi/Si/PtSi nanowire heterostructures, and nanodevices from such heterostructures. Scanning electron microscopy studies show that silicon nanowires can be converted into PtSi nanowires through controlled reactions between lithographically defined platinum pads and silicon nanowires. High-resolution transmission electron microscopy studies show that PtSi/Si/PtSi heterostructure has an atomically sharp interface with epitaxial relationships of Si[110]//PtSi[010] and Si(111)//PtSi(101). Electrical measurements show that the pure PtSi nanowires have low resistivities approximately 28.6 microOmega.cm and high breakdown current densities>1x10(8) A/cm2. Furthermore, using single crystal PtSi/Si/PtSi nanowire heterostructures with atomically sharp interfaces, we have fabricated high-performance nanoscale field-effect transistors from intrinsic silicon nanowires, in which the source and drain contacts are defined by the metallic PtSi nanowire regions, and the gate length is defined by the Si nanowire region. Electrical measurements show nearly perfect p-channel enhancement mode transistor behavior with a normalized transconductance of 0.3 mS/microm, field-effect hole mobility of 168 cm2/V.s, and on/off ratio>10(7), demonstrating the best performing device from intrinsic silicon nanowires.

  13. Electronic transport mechanism and photocurrent generations of single-crystalline InN nanowires

    Science.gov (United States)

    Lee, Sunghun; Lee, Wonjoo; Seo, Kwanyong; Kim, Jinhee; Han, Sung-Hwan; Kim, Bongsoo

    2008-10-01

    Nanodevices using individual indium nitride nanowires are fabricated by e-beam lithography. The nanowires have diameters of 40-80 nm, lengths up to several tens of micrometres and single-crystalline nature. We observed ohmic I-V behaviour of InN nanowires above nearly 100 K, which is consistent with the pinning Fermi level of the metal electrode near the conduction band edge of InN nanowire. At low temperatures, the device shows typical semiconductor behaviour along with a quantum tunnelling effect through the Schottky barrier rather than thermally activated transport. The activation energy calculated above and below 80 K is 28.2 and 5.08 meV, respectively. We have also fabricated a photocurrent generation device using InN nanowires. The photocurrent of an acceptor-sensitizer dyad with di-(3-aminopropyl)-viologen (DAPV) and a Ru complex on an InN nanowires/ITO plate was 8.3 nA cm-2, which increased by 62.7% compared to that without InN nanowire layers.

  14. Electronic properties of core-shell nanowire resonant tunneling diodes

    Science.gov (United States)

    2014-01-01

    The electronic sub-band structure of InAs/InP/InAs/InP/InAs core-shell nanowire resonant tunneling diodes has been investigated in the effective mass approximation by varying the core radius and the thickness of the InP barriers and InAs shells. A top-hat, double-barrier potential profile and optimal energy configuration are obtained for core radii and surface shells >10 nm, InAs middle shells barriers. In this case, two sub-bands exist above the Fermi level in the InAs middle shell which belongs to the m = 0 and m = 1 ladder of states that have similar wave functions and energies. On the other hand, the lowest m = 0 sub-band in the core falls below the Fermi level but the m = 1 states do not contribute to the current transport since they reside energetically well above the Fermi level. We compare the case of GaAs/AlGaAs/GaAs/AlGaAs/GaAs which may conduct current with smaller applied voltages due to the larger effective mass of electrons in GaAs and discuss the need for doping. PMID:25288912

  15. Low Temperature Characterization of PMOS-type Gate-all-around Silicon nanowire FETs as single-hole-transistors

    Science.gov (United States)

    Hong, B. H.; Hwang, S. W.; Lee, Y. Y.; Son, M. H.; Ahn, D.; Cho, K. H.; Yeo, K. H.; Kim, D.-W.; Jin, G. Y.; Park, D.

    2011-12-01

    We report the single hole tunneling characteristics observed from a PMOS-type gate-all-around silicon nanowire field-effect-transistor with the radius 5 nm and the length 44 nm. The total capacitance of the quantum dot obtained from the measured Coulomb oscillations and Coulomb diamonds matches with the ideal capacitance of the silicon cylinder. It suggests that the observed single hole tunneling is originated from the fabricated structure.

  16. Transient Rayleigh scattering from single semiconductor nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Montazeri, Mohammad; Jackson, Howard E.; Smith, Leigh M. [Department of Physics, University of Cincinnati, Cincinnati, OH 45221-0011 (United States); Yarrison-Rice, Jan M. [Department of Physics, Miami University, Oxford, OH 45056 (United States); Kang, Jung-Hyun; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati [Department of Electronic Materials Engineering, Research School of Physics and Engineering, The Australian National University, Canberra, ACT 0200 (Australia)

    2013-12-04

    Transient Rayleigh scattering spectroscopy is a new pump-probe technique to study the dynamics and cooling of photo-excited carriers in single semiconductor nanowires. By studying the evolution of the transient Rayleigh spectrum in time after excitation, one can measure the time evolution of the density and temperature of photo-excited electron-hole plasma (EHP) as they equilibrate with lattice. This provides detailed information of dynamics and cooling of carriers including linear and bimolecular recombination properties, carrier transport characteristics, and the energy-loss rate of hot electron-hole plasma through the emission of LO and acoustic phonons.

  17. Coaxial nanowire resonant tunneling diodes from non-polar AlN/GaN on silicon

    Science.gov (United States)

    Carnevale, S. D.; Marginean, C.; Phillips, P. J.; Kent, T. F.; Sarwar, A. T. M. G.; Mills, M. J.; Myers, R. C.

    2012-04-01

    Resonant tunneling diodes are formed using AlN/GaN core-shell nanowire heterostructures grown by plasma assisted molecular beam epitaxy on n-Si(111) substrates. By using a coaxial geometry, these devices take advantage of non-polar (m-plane) nanowire sidewalls. Device modeling predicts non-polar orientation should enhance resonant tunneling compared to a polar structure, and that AlN double barriers will lead to higher peak-to-valley current ratios compared to AlGaN barriers. Electrical measurements of ensembles of nanowires show negative differential resistance appearing only at cryogenic temperature. Individual nanowire measurements show negative differential resistance at room temperature with peak current density of 5 × 105 A/cm2.

  18. 1D-transport properties of single superconducting lead nanowires

    DEFF Research Database (Denmark)

    Michotte, S.; Mátéfi-Tempfli, Stefan; Piraux, L.

    2003-01-01

    We report on the transport properties of single superconducting lead nanowires grown by an electrodeposition technique, embedded in a nanoporous track-etched polymer membrane. The nanowires are granular, have uniform diameter of ̃40 nm and a very large aspect ratio (̃500). The diameter of the nan......We report on the transport properties of single superconducting lead nanowires grown by an electrodeposition technique, embedded in a nanoporous track-etched polymer membrane. The nanowires are granular, have uniform diameter of ̃40 nm and a very large aspect ratio (̃500). The diameter...

  19. Detection of current-driven magnetic domains in [Co/Pd] nanowire by tunneling magnetoresistive sensor

    Science.gov (United States)

    Okuda, Mitsunobu; Miyamoto, Yasuyoshi; Miyashita, Eiichi; Saito, Nobuo; Hayashi, Naoto; Nakagawa, Shigeki

    2015-05-01

    Current-driven magnetic domain walls in magnetic nanowires have attracted a great deal of interest in terms of both physical studies and engineering applications. The anomalous Hall effect measurement is widely used for detecting the magnetization direction of current-driven magnetic domains in a magnetic nanowire. However, the problem with this measurement is that the detection point for current-driven domain wall motion is fixed at only the installed sensing wire across the specimen nanowire. A potential solution is the magnetic domain scope method, whereby the distribution of the magnetic flux leaking from the specimen can be analyzed directly by contact-scanning a tunneling magnetoresistive field sensor on a sample. In this study, we fabricated specimen nanowires consisting of [Co (0.3)/Pd (1.2)]21/Ta(3) films (units in nm) with perpendicular magnetic anisotropy on Si substrates. A tunneling magnetoresistive sensor was placed on the nanowire surface and a predetermined current pulse was applied. Real-time detection of the current-driven magnetic domain motion was successful in that the resistance of the tunneling magnetoresistive sensor was changed with the magnetization direction beneath the sensor. This demonstrates that magnetic domain detection using a tunneling magnetoresistive sensor is effective for the direct analysis of micro magnetic domain motion.

  20. High-Current GaSb/InAs(Sb) Nanowire Tunnel Field-Effect Transistors

    OpenAIRE

    Dey, Anil; Borg, Mattias; Ganjipour, Bahram; Ek, Martin; Dick Thelander, Kimberly; Lind, Erik; Thelander, Claes; Wernersson, Lars-Erik

    2013-01-01

    We present electrical characterization of GaSb/InAs(Sb) nanowire tunnel field-effect transistors. The broken band alignment of the GaSb/InAs(Sb) heterostructure is exploited to allow for interband tunneling without a barrier, leading to high ON-current levels. We report a maximum drive current of 310 μA/μm at Vds = 0.5 V. Devices with scaled gate oxides display transconductances up to gm = 250 mS/mm at Vds = 300 mV, which are normalized to the nanowire circumference at the axial heterojunction...

  1. Superconducting tunneling on thin film gold nanowires - a platform for searching Majorana fermions

    Science.gov (United States)

    Wei, Peng; Lee, Patrick; Moodera, Jagadeesh

    The metallic surface states of (111)-oriented gold thin film has been theoretically shown to be a superior candidate for Majorana fermions (MF) due to its orders of magnitude stronger spin-orbit coupling compared to semiconductor nanowires. We experimentally demonstrate an ideal platform using heterostructure based nanowires for achieving this, and exploit quantum tunneling to probe the MFs forming at the end of the nanowires. By controlling the material properties of the tunnel barrier, we explore the peculiar behaviors of superconducting gold surface states in both pair tunneling (Josephson like) and quasiparticle tunneling regimes that may hint the signatures of MFs. Additionally, in the mesoscopic 1D gold nanowire superconductor, we observe a new superconducting phase with an energy gap much larger than any of the superconductors in the tunneling device, hinting possible unknown pairing mechanism. Our approach directly demonstrates a crucial step in achieving realistic fault-tolerant quantum computation devices based on non-abelian particles. We acknowledge John Templeton Foundation Grant-39944, NSF DMR-1207469 and ONR N00014-13-1-0301.

  2. Axial Ge/Si nanowire heterostructure tunnel FETs.

    Energy Technology Data Exchange (ETDEWEB)

    Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

    2010-03-01

    Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx

  3. Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

    Science.gov (United States)

    Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

    2018-04-27

    III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

  4. ON current enhancement of nanowire Schottky barrier tunnel field effect transistors

    Science.gov (United States)

    Takei, Kohei; Hashimoto, Shuichiro; Sun, Jing; Zhang, Xu; Asada, Shuhei; Xu, Taiyu; Matsukawa, Takashi; Masahara, Meishoku; Watanabe, Takanobu

    2016-04-01

    Silicon nanowire Schottky barrier tunnel field effect transistors (NW-SBTFETs) are promising structures for high performance devices. In this study, we fabricated NW-SBTFETs to investigate the effect of nanowire structure on the device characteristics. The NW-SBTFETs were operated with a backgate bias, and the experimental results demonstrate that the ON current density is enhanced by narrowing the width of the nanowire. We confirmed using the Fowler-Nordheim plot that the drain current in the ON state mainly comprises the quantum tunneling component through the Schottky barrier. Comparison with a technology computer aided design (TCAD) simulation revealed that the enhancement is attributed to the electric field concentration at the corners of cross-section of the NW. The study findings suggest an effective approach to securing the ON current by Schottky barrier width modulation.

  5. Tunneling spin injection into single layer graphene.

    Science.gov (United States)

    Han, Wei; Pi, K; McCreary, K M; Li, Yan; Wong, Jared J I; Swartz, A G; Kawakami, R K

    2010-10-15

    We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO₂ seeded MgO barriers. A nonlocal magnetoresistance (ΔR(NL)) of 130  Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔR(NL) vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

  6. Single nanowire resistive nano-heater for highly localized thermo-chemical reactions: localized hierarchical heterojunction nanowire growth.

    Science.gov (United States)

    Yeo, Junyeob; Kim, Gunho; Hong, Sukjoon; Lee, Jinhwan; Kwon, Jinhyeong; Lee, Habeom; Park, Heeseung; Manoroktul, Wanit; Lee, Ming-Tsang; Lee, Bong Jae; Grigoropoulos, Costas P; Ko, Seung Hwan

    2014-12-29

    A single nanowire resistive nano-heater (RNH) is fabricated, and it is demonstrated that the RNH can induce highly localized temperature fields, which can trigger highly localized thermo-chemical reactions to grow hierarchical nanowires directly at the desired specific spot such as ZnO nanowire branch growth on a single Ag nanowire. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. An analytic model for gate-all-around silicon nanowire tunneling field effect transistors

    Science.gov (United States)

    Liu, Ying; He, Jin; Chan, Mansun; Du, Cai-Xia; Ye, Yun; Zhao, Wei; Wu, Wen; Deng, Wan-Ling; Wang, Wen-Ping

    2014-09-01

    An analytical model of gate-all-around (GAA) silicon nanowire tunneling field effect transistors (NW-TFETs) is developted based on the surface potential solutions in the channel direction and considering the band to band tunneling (BTBT) efficiency. The three-dimensional Poisson equation is solved to obtain the surface potential distributions in the partition regions along the channel direction for the NW-TFET, and a tunneling current model using Kane's expression is developed. The validity of the developed model is shown by the good agreement between the model predictions and the TCAD simulation results.

  8. Periodicity of resonant tunneling current induced by the Stark resonances in semiconductor nanowire

    Science.gov (United States)

    Wołoszyn, M.; Adamowski, J.; Wójcik, P.; Spisak, B. J.

    2013-10-01

    The modification of the electronic current resulting from Stark resonances has been studied for the semiconductor nanowire with the double-barrier structure. Based on the calculated current-voltage characteristics, we have shown that the resonant tunneling current is a periodic function of the width of the spacer layer. We have also demonstrated that the simultaneous change of the source-drain voltage and the voltage applied to the gate located near the nanowire leads to almost periodic changes of the resonant tunneling current as a function of the source-drain and gate voltages. The periodic properties of the resonant tunneling current result from the formation of the Stark resonance states. If we change the electric field acting in the nanowire, the Stark states periodically acquire the energies from the transport window and enhance the tunneling current in a periodic manner. We have found that the separations between the resonant current peaks on the source-drain voltage scale can be described by a slowly increasing linear function of the Stark state quantum number. This allows us to identify the quantum states that are responsible for the enhancement of the resonant tunneling. We have proposed a method of the experimental observation of the Stark resonances in semiconductor double-barrier heterostructures.

  9. Modeling and Development of Superconducting Nanowire Single Photon Detectors

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal outlines a research project as the central component of a Ph.D. program focused on the device physics of superconducting nanowire single photon...

  10. Tuning the tunneling probability by mechanical stress in Schottky barrier based reconfigurable nanowire transistors

    Science.gov (United States)

    Baldauf, Tim; Heinzig, André; Trommer, Jens; Mikolajick, Thomas; Weber, Walter Michael

    2017-02-01

    Mechanical stress is an established and important tool of the semiconductor industry to improve the performance of modern transistors. It is well understood for the enhancement of carrier mobility but rather unexplored for the control of the tunneling probability for injection dominated research devices based on tunneling phenomena, such as tunnel FETs, resonant tunnel FETs and reconfigurable Schottky FETs. In this work, the effect of stress on the tunneling probability and overall transistor characteristics is studied by three-dimensional device simulations in the example of reconfigurable silicon nanowire Schottky barrier transistors using two independently gated Schottky junctions. To this end, four different stress sources are investigated. The effects of mechanical stress on the average effective tunneling mass and on the multi-valley band structure applying the deformation potential theory are being considered. The transfer characteristics of strained transistors in n- and p-configuration and corresponding charge carrier tunneling are analyzed with respect to the current ratio between electron and hole conduction. For the implementation of these devices into complementary circuits, the mandatory current ratio of unity can be achieved by appropriate mechanical stress either by nanowire oxidation or the application of a stressed top layer.

  11. Synthesis of uniform CdS nanowires in high yield and its single nanowire electrical property

    International Nuclear Information System (INIS)

    Yan Shancheng; Sun Litao; Qu Peng; Huang Ninping; Song Yinchen; Xiao Zhongdang

    2009-01-01

    Large-scale high quality CdS nanowires with uniform diameter were synthesized by using a rapid and simple solvothermal route. Field emission scan electron microscopy (FESEM) and transmission electron microscopy (TEM) images show that the CdS nanowires have diameter of about 26 nm and length up to several micrometres. High resolution TEM (HRTEM) study indicates the single-crystalline nature of CdS nanowires with an oriented growth along the c-axis direction. The optical properties of the products were characterized by UV-vis absorption spectra, photoluminescence spectra and Raman spectra. The resistivity, electron concentration and electron mobility of single NW are calculated by fitting the symmetric I-V curves measured on single NW by the metal-semiconductor-metal model based on thermionic field emission theory. - Graphical abstract: Large-scale high quality CdS nanowires (NWs) with uniform diameter were synthesized by using a rapid and simple solvothermal route. The reaction time is reduced to 2 h, comparing to other synthesis which needed long reaction time up to 12 h. In addition, the as-prepared CdS nanowires have more uniform diameter and high yield. More importantly, the I-V curve of present single CdS nanowire has a good symmetric characteristic as expected by the theory.

  12. Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length

    OpenAIRE

    Tomioka, Katsuhiro; Fukui, Takashi

    2014-01-01

    We report on a fabrication of tunnel field-effect transistors using InGaAs nanowire/Si heterojunctions and the characterization of scaling of channel lengths. The devices consisted of single InGaAs nanowires with a diameter of 30 nm grown on p-type Si(111) substrates. The switch demonstrated steep subthreshold-slope (30 mV/decade) at drain-source voltage (V-DS) of 0.10 V. Also, pinch-off behavior appeared at moderately low VDS, below 0.10 V. Reducing the channel length of the transistors atta...

  13. Spatially resolved Hall effect measurement in a single semiconductor nanowire

    Science.gov (United States)

    Storm, Kristian; Halvardsson, Filip; Heurlin, Magnus; Lindgren, David; Gustafsson, Anders; Wu, Phillip M.; Monemar, Bo; Samuelson, Lars

    2012-12-01

    Efficient light-emitting diodes and photovoltaic energy-harvesting devices are expected to play an important role in the continued efforts towards sustainable global power consumption. Semiconductor nanowires are promising candidates as the active components of both light-emitting diodes and photovoltaic cells, primarily due to the added freedom in device design offered by the nanowire geometry. However, for nanowire-based components to move past the proof-of-concept stage and be implemented in production-grade devices, it is necessary to precisely quantify and control fundamental material properties such as doping and carrier mobility. Unfortunately, the nanoscale geometry that makes nanowires interesting for applications also makes them inherently difficult to characterize. Here, we report a method to carry out Hall measurements on single core-shell nanowires. Our technique allows spatially resolved and quantitative determination of the carrier concentration and mobility of the nanowire shell. As Hall measurements have previously been completely unavailable for nanowires, the experimental platform presented here should facilitate the implementation of nanowires in advanced practical devices.

  14. Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors

    Science.gov (United States)

    Yoon, Jun-Sik; Kim, Kihyun; Baek, Chang-Ki

    2017-01-01

    We propose three-terminal core-shell (CS) silicon vertical nanowire tunneling field-effect transistors (TFETs), which can be fabricated by conventional CMOS technology. CS TFETs show lower subthreshold swing (SS) and higher on-state current than conventional TFETs through their high surface-to-volume ratio, which increases carrier-tunneling region with no additional device area. The on-state current can be enhanced by increasing the nanowire height, decreasing equivalent oxide thickness (EOT) or creating a nanowire array. The off-state current is also manageable for power saving through selective epitaxial growth at the top-side nanowire region. CS TFETs with an EOT of 0.8 nm and an aspect ratio of 20 for the core nanowire region provide the largest drain current ranges with point SS values below 60 mV/dec and superior on/off current ratio under all operation voltages of 0.5, 0.7, and 1.0 V. These devices are promising for low-power applications at low fabrication cost and high device density. PMID:28112273

  15. Core-shell homojunction silicon vertical nanowire tunneling field-effect transistors

    Science.gov (United States)

    Yoon, Jun-Sik; Kim, Kihyun; Baek, Chang-Ki

    2017-01-01

    We propose three-terminal core-shell (CS) silicon vertical nanowire tunneling field-effect transistors (TFETs), which can be fabricated by conventional CMOS technology. CS TFETs show lower subthreshold swing (SS) and higher on-state current than conventional TFETs through their high surface-to-volume ratio, which increases carrier-tunneling region with no additional device area. The on-state current can be enhanced by increasing the nanowire height, decreasing equivalent oxide thickness (EOT) or creating a nanowire array. The off-state current is also manageable for power saving through selective epitaxial growth at the top-side nanowire region. CS TFETs with an EOT of 0.8 nm and an aspect ratio of 20 for the core nanowire region provide the largest drain current ranges with point SS values below 60 mV/dec and superior on/off current ratio under all operation voltages of 0.5, 0.7, and 1.0 V. These devices are promising for low-power applications at low fabrication cost and high device density.

  16. Esaki tunnel diodes based on vertical Si-Ge nanowire heterojunctions

    Science.gov (United States)

    Fung, Wayne Y.; Chen, Lin; Lu, Wei

    2011-08-01

    High performance Esaki tunnel diodes [L. Esaki, Phys. Rev. 109, 603 (1958)] based on small-diameter Ge/Si core/shell nanowires vertically grown on Si substrates are demonstrated. The devices exhibit pronounced negative differential resistance with peak-to-valley current ratio of 2.75, high peak current density of 2.4 kA/cm2, and high tunneling current density of 237 kA/cm2 at 1 V reverse bias, all obtained at room temperature. The peak current is found to increase with temperature and the data can be well explained with a band-to-band tunneling model. These results suggest that Si-Ge heterojunction with low defect density can be obtained for device applications such as tunnel diodes and tunnel field-effect transistors.

  17. Single cell detection using a magnetic zigzag nanowire biosensor.

    Science.gov (United States)

    Huang, Hao-Ting; Ger, Tzong-Rong; Lin, Ya-Hui; Wei, Zung-Hang

    2013-08-07

    A magnetic zigzag nanowire device was designed for single cell biosensing. Nanowires with widths of 150, 300, 500, and 800 nm were fabricated on silicon trenches by electron beam lithography, electron beam evaporation, and lift-off processes. Magnetoresistance measurements were performed before and after the attachment of a single magnetic cell to the nanowires to characterize the magnetic signal change due to the influence of the magnetic cell. Magnetoresistance responses were measured in different magnetic field directions, and the results showed that this nanowire device can be used for multi-directional detection. It was observed that the highest switching field variation occurred in a 150 nm wide nanowire when the field was perpendicular to the substrate plane. On the other hand, the highest magnetoresistance ratio variation occurred in a 800 nm wide nanowire also when the field was perpendicular to the substrate plane. Besides, the trench-structured substrate proposed in this study can fix the magnetic cell to the sensor in a fluid environment, and the stray field generated by the corners of the magnetic zigzag nanowires has the function of actively attracting the magnetic cells for detection.

  18. Nanowire Tunnel Field Effect Transistors: Prospects and Pitfalls

    OpenAIRE

    Sylvia, Somaia Sarwat

    2014-01-01

    The tunnel field effect transistor (TFET) has the potential to operate at lower voltages and lower power than the field effect transistor (FET). The TFET can circumvent the fundamental thermal limit of the inverse subthreshold slope (S) by exploiting interband tunneling of non-equilibrium "cold" carriers. The conduction mechanism in the TFET is governed by band-to-band tunneling which limits the drive current. TFETs built with III-V materials like InAs and InSb can produce enough tunneling cu...

  19. Temperature gradient-induced magnetization reversal of single ferromagnetic nanowires

    Science.gov (United States)

    Michel, Ann-Kathrin; Corinna Niemann, Anna; Boehnert, Tim; Martens, Stephan; Montero Moreno, Josep M.; Goerlitz, Detlef; Zierold, Robert; Reith, Heiko; Vega, Victor; Prida, Victor M.; Thomas, Andy; Gooth, Johannes; Nielsch, Kornelius

    2017-12-01

    In this study, we investigate the temperature- and temperature gradient-dependent magnetization reversal process of individual, single-domain Co39Ni61 and Fe15Ni85 ferromagnetic nanowires via the magneto-optical Kerr effect and magnetoresistance measurements. While the coercive fields (H C) and therefore the magnetic switching fields (H SW) generally decrease under isothermal conditions at elevated base temperatures (T base), temperature gradients (ΔT) along the nanowires lead to an increased switching field of up to 15% for ΔT  = 300 K in Co39Ni61 nanowires. This enhancement is attributed to a stress-induced, magneto-elastic anisotropy term due to an applied temperature gradient along the nanowire that counteracts the thermally assisted magnetization reversal process. Our results demonstrate that a careful distinction between locally elevated temperatures and temperature gradients has to be made in future heat-assisted magnetic recording devices.

  20. Materialization of single multicomposite nanowire: entrapment of ZnO nanoparticles in polyaniline nanowire

    Directory of Open Access Journals (Sweden)

    Park Seong

    2011-01-01

    Full Text Available Abstract We present materialization of single multicomposite nanowire (SMNW-entrapped ZnO nanoparticles (NPs via an electrochemical growth method, which is a newly developed fabrication method to grow a single nanowire between a pair of pre-patterned electrodes. Entrapment of ZnO NPs was controlled via different conditions of SMNW fabrication such as an applied potential and mixture ratio of NPs and aniline solution. The controlled concentration of ZnO NP results in changes in the physical properties of the SMNWs, as shown in transmission electron microscopy images. Furthermore, the electrical conductivity and elasticity of SMNWs show improvement over those of pure polyaniline nanowire. The new nano-multicomposite material showed synergistic effects on mechanical and electrical properties, with logarithmical change and saturation increasing ZnO NP concentration.

  1. Simple and controlled single electron transistor based on doping modulation in silicon nanowires

    Science.gov (United States)

    Hofheinz, M.; Jehl, X.; Sanquer, M.; Molas, G.; Vinet, M.; Deleonibus, S.

    2006-10-01

    A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on silicon-on-insulator thin films. The channel of the transistor is the Coulomb island at low temperature. Two silicon nitride spacers deposited on each side of the gate create a modulation of doping along the nanowire that creates tunnel barriers. Such barriers are fixed and controlled, like in metallic SETs. The period of the Coulomb oscillations is set by the gate capacitance of the transistor and therefore controlled by lithography. The source and drain capacitances have also been characterized. This design could be used to build more complex SET devices.

  2. Anomalous high capacitance in a coaxial single nanowire capacitor.

    Science.gov (United States)

    Liu, Zheng; Zhan, Yongjie; Shi, Gang; Moldovan, Simona; Gharbi, Mohamed; Song, Li; Ma, Lulu; Gao, Wei; Huang, Jiaqi; Vajtai, Robert; Banhart, Florian; Sharma, Pradeep; Lou, Jun; Ajayan, Pulickel M

    2012-06-06

    Building entire multiple-component devices on single nanowires is a promising strategy for miniaturizing electronic applications. Here we demonstrate a single nanowire capacitor with a coaxial asymmetric Cu-Cu(2)O-C structure, fabricated using a two-step chemical reaction and vapour deposition method. The capacitance measured from a single nanowire device corresponds to ~140 μF cm(-2), exceeding previous reported values for metal-insulator-metal micro-capacitors and is more than one order of magnitude higher than what is predicted by classical electrostatics. Quantum mechanical calculations indicate that this unusually high capacitance may be attributed to a negative quantum capacitance of the dielectric-metal interface, enhanced significantly at the nanoscale.

  3. Tracking Ultrafast Carrier Dynamics in Single Semiconductor Nanowire Heterostructures

    Directory of Open Access Journals (Sweden)

    Taylor A.J.

    2013-03-01

    Full Text Available An understanding of non-equilibrium carrier dynamics in silicon (Si nanowires (NWs and NW heterostructures is very important due to their many nanophotonic and nanoelectronics applications. Here, we describe the first measurements of ultrafast carrier dynamics and diffusion in single heterostructured Si nanowires, obtained using ultrafast optical microscopy. By isolating individual nanowires, we avoid complications resulting from the broad size and alignment distribution in nanowire ensembles, allowing us to directly probe ultrafast carrier dynamics in these quasi-one-dimensional systems. Spatially-resolved pump-probe spectroscopy demonstrates the influence of surface-mediated mechanisms on carrier dynamics in a single NW, while polarization-resolved femtosecond pump-probe spectroscopy reveals a clear anisotropy in carrier lifetimes measured parallel and perpendicular to the NW axis, due to density-dependent Auger recombination. Furthermore, separating the pump and probe spots along the NW axis enabled us to track space and time dependent carrier diffusion in radial and axial NW heterostructures. These results enable us to reveal the influence of radial and axial interfaces on carrier dynamics and charge transport in these quasi-one-dimensional nanosystems, which can then be used to tailor carrier relaxation in a single nanowire heterostructure for a given application.

  4. Quantum dots and tunnel barriers in InAs/InP nanowire heterostructures: Electronic and optical properties

    Science.gov (United States)

    Niquet, Yann-Michel; Mojica, Dulce Camacho

    2008-03-01

    We compute the structural and electronic properties of ⟨111⟩-oriented InAs/InP nanowire heterostructures using Keating’s valence force field and a tight-binding model. We focus on the optical properties (exciton energies and polarization) of InAs quantum dots embedded in InP nanowires and on the height of InP and InAsP tunnel barriers embedded in InAs nanowires. We show that InAs quantum dots exhibit bright optical transitions, at variance with the highly mismatched InAs/GaAs nanowire heterostructures. The polarization of the photons is perpendicular to the nanowire for thin InAs layers but rotates parallel to the nanowire for thick enough ones, as a result of the increasing light-hole character of the exciton. As for tunnel barriers, we show that the residual strains can significantly reduce the conduction band discontinuity in thin InAsP layers. This must be taken into account in the design of nanowire tunneling devices.

  5. Single Crystalline Cadmium Sulfide Nanowires with Branched Structure

    Directory of Open Access Journals (Sweden)

    Lu Qingyi

    2009-01-01

    Full Text Available Abstract In this article, we report the synthesis of branched single crystal CdS nanowires. This branched CdS nanostructure is prepared by a simple surfactant-directing method, which is of particular interest as it uses readily available reagents and provides a convenient route to high-yield single crystal nanowires but with branched shape. These branched nanowires have an average diameter of about 40 nm and length up to several micrometers. A possible mechanism has been proposed and the addition of surfactant dodecylthiol into the two mixed-solvents would play an importance effect on the structure of the product. Based on the mechanism, by controlling the synthesis conditions, such as the ratios between the surfactant, inorganic solvent, and organic solvent, other kinds of nanostructures based on CdS nanowires were also prepared. Photoluminescence (PL measurement reveals that the branched CdS nanowires have a strong emission at about 700 nm which might be due to its special structure.

  6. Strained silicon and silicon germanium nanowire tunnel FETs and inverters

    OpenAIRE

    Richter, Simon

    2014-01-01

    Reducing power consumption is an important issue for integrated circuits in portable devices relying on batteries and systems without external power supply. Scaling of the supply voltage VDD in integrated circuits is a powerful tool for reducing the power consumption, due to the quadratic dependence on VDD. MOSFETs, however, exhibit a fundamental limitation for the drain current increase per applied gate voltage difference. The tunnel field-effect transistor (TFET) provides the ability for be...

  7. X-ray diffraction from single GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Biermanns, Andreas

    2012-11-12

    In recent years, developments in X-ray focussing optics have allowed to produce highly intense, coherent X-ray beams with spot sizes in the range of 100 nm and below. Together with the development of new experimental stations, X-ray diffraction techniques can now be applied to study single nanometer-sized objects. In the present work, X-ray diffraction is applied to study different aspects of the epitaxial growth of GaAs nanowires. Besides conventional diffraction methods, which employ X-ray beams with dimensions of several tens of {mu}m, special emphasis lies on the use of nanodiffraction methods which allow to study single nanowires in their as-grown state without further preparation. In particular, coherent X-ray diffraction is applied to measure simultaneously the 3-dimensional shape and lattice parameters of GaAs nanowires grown by metal-organic vapor phase epitaxy. It is observed that due to a high density of zinc-blende rotational twins within the nanowires, their lattice parameter deviates systematically from the bulk zinc-blende phase. In a second step, the initial stage in the growth of GaAs nanowires on Si (1 1 1) surfaces is studied. This nanowires, obtained by Ga-assisted growth in molecular beam epitaxy, grow predominantly in the cubic zinc-blende structure, but contain inclusions of the hexagonal wurtzite phase close to their bottom interface. Using nanodiffraction methods, the position of the different structural units along the growth axis is determined. Because the GaAs lattice is 4% larger than silicon, these nanowires release their lattice mismatch by the inclusion of dislocations at the interface. Whereas NWs with diameters below 50 nm are free of strain, a rough interface structure in nanowires with diameters above 100 nm prevents a complete plastic relaxation, leading to a residual strain at the interface that decays elastically along the growth direction. Finally, measurements on GaAs-core/InAs-shell nanowire heterostructures are presented

  8. Photon Cascade from a Single Crystal Phase Nanowire Quantum Dot

    DEFF Research Database (Denmark)

    Bouwes Bavinck, Maaike; Jöns, Klaus D; Zieliński, Michal

    2016-01-01

    We report the first comprehensive experimental and theoretical study of the optical properties of single crystal phase quantum dots in InP nanowires. Crystal phase quantum dots are defined by a transition in the crystallographic lattice between zinc blende and wurtzite segments and therefore offe...

  9. Waveguide-Coupled Superconducting Nanowire Single-Photon Detectors

    Science.gov (United States)

    Beyer, Andrew D.; Briggs, Ryan M.; Marsili, Francesco; Cohen, Justin D.; Meenehan, Sean M.; Painter, Oskar J.; Shaw, Matthew D.

    2015-01-01

    We have demonstrated WSi-based superconducting nanowire single-photon detectors coupled to SiNx waveguides with integrated ring resonators. This photonics platform enables the implementation of robust and efficient photon-counting detectors with fine spectral resolution near 1550 nm.

  10. Harmonics Generation by Surface Plasmon Polaritons on Single Nanowires.

    Science.gov (United States)

    de Hoogh, Anouk; Opheij, Aron; Wulf, Matthias; Rotenberg, Nir; Kuipers, L

    2016-08-17

    We present experimental observations of visible wavelength second- and third-harmonic generation on single plasmonic nanowires of variable widths. We identify that near-infrared surface plasmon polaritons, which are guided along the nanowire, act as the source of the harmonics generation. We discuss the underlying mechanism of this nonlinear process, using a combination of spatially resolved measurements and numerical simulations to show that the visible harmonics are generated via a combination of both local and propagating plasmonic modes. Our results provide the first demonstration of nanoscale nonlinear optics with guided, propagating plasmonic modes on a lithographically defined chip, opening up new routes toward integrated optical circuits for information processing.

  11. Direct Photonic-Plasmonic Coupling and Routing in Single Nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Rouxue; Pausauskie, Peter; Huang, Jiaxing; Yang, Piedong

    2009-10-20

    Metallic nanoscale structures are capable of supporting surface plasmon polaritons (SPPs), propagating collective electron oscillations with tight spatial confinement at the metal surface. SPPs represent one of the most promising structures to beat the diffraction limit imposed by conventional dielectric optics. Ag nano wires have drawn increasing research attention due to 2D sub-100 nm mode confinement and lower losses as compared with fabricated metal structures. However, rational and versatile integration of Ag nanowires with other active and passive optical components, as well as Ag nanowire based optical routing networks, has yet to be achieved. Here, we demonstrate that SPPs can be excited simply by contacting a silver nanowire with a SnO2 nanoribbon that serves both as an unpolarized light source and a dielectric waveguide. The efficient coupling makes it possible to measure the propagation-distance-dependent waveguide spectra and frequency-dependent propagation length on a single Ag nanowire. Furthermore, we have demonstrated prototypical photonic-plasmonic routing devices, which are essential for incorporating low-loss Ag nanowire waveguides as practical components into high-capacity photonic circuits.

  12. Unveiling the Formation Pathway of Single Crystalline Porous Silicon Nanowires

    Science.gov (United States)

    Zhong, Xing; Qu, Yongquan; Lin, Yung-Chen; Liao, Lei; Duan, Xiangfeng

    2011-01-01

    Porous silicon nanowire is emerging as an interesting material system due to its unique combination of structural, chemical, electronic, and optical properties. To fully understand their formation mechanism is of great importance for controlling the fundamental physical properties and enabling potential applications. Here we present a systematic study to elucidate the mechanism responsible for the formation of porous silicon nanowires in a two-step silver-assisted electroless chemical etching method. It is shown that silicon nanowire arrays with various porosities can be prepared by varying multiple experimental parameters such as the resistivity of the starting silicon wafer, the concentration of oxidant (H2O2) and the amount of silver catalyst. Our study shows a consistent trend that the porosity increases with the increasing wafer conductivity (dopant concentration) and oxidant (H2O2) concentration. We further demonstrate that silver ions, formed by the oxidation of silver, can diffuse upwards and re-nucleate on the sidewalls of nanowires to initiate new etching pathways to produce porous structure. The elucidation of this fundamental formation mechanism opens a rational pathway to the production of wafer-scale single crystalline porous silicon nanowires with tunable surface areas ranging from 370 m2·g−1 to 30 m2·g−1, and can enable exciting opportunities in catalysis, energy harvesting, conversion, storage, as well as biomedical imaging and therapy. PMID:21244020

  13. InAs/GaSb heterostructure nanowires for tunnel field-effect transistors.

    Science.gov (United States)

    Borg, B Mattias; Dick, Kimberly A; Ganjipour, Bahram; Pistol, Mats-Erik; Wernersson, Lars-Erik; Thelander, Claes

    2010-10-13

    InAs/GaSb nanowire heterostructures with thin GaInAs inserts were grown by MOVPE and characterized by electrical measurements and transmission electron microscopy. Down-scaling of the insert thickness was limited because of an observed sensitivity of GaSb nanowire growth to the presence of In. By employing growth interrupts in between the InAs and GaInAs growth steps it was possible to reach an insert thickness down to 25 nm. Two-terminal devices show a diode behavior, where temperature-dependent measurements indicate a heterostructure barrier height of 0.5 eV, which is identified as the valence band offset between the InAs and GaSb. Three-terminal transistor structures with a top-gate positioned at the heterointerface show clear indications of band-to-band tunnelling.

  14. Nanowire assembly, e.g. for optical probes, comprises optically trapping high aspect ratio semiconductor nanowire with infrared single-beam optical trap and attaching nanowire to organic or inorganic structure

    OpenAIRE

    Pauzauskie, P.; Radenovic, A.; Trepagnier, E.; Liphardt, J.; Yang, P.

    2007-01-01

    NOVELTY - A nanowire assembly method comprises optically trapping a semiconductor nanowire with an infrared single-beam optical trap and attaching the nanowire to an organic or inorganic structure by laser fusing. The nanowire is further trapped in a fluid environment. The optical trap has a beam wavelength of 1064 nm. The nanowire has an aspect ratio greater than 100 and a diameter less than 100 (preferably less than 80) nm. The nanowire and the organic or inorganic structure form a heterost...

  15. Coupling of a single quantum emitter to end-to-end aligned silver nanowires

    DEFF Research Database (Denmark)

    Kumar, Shailesh; Huck, Alexander; Chen, Yuntian

    2013-01-01

    We report on the observation of coupling a single nitrogen vacancy (NV) center in a nanodiamond crystal to a propagating plasmonic mode of silver nanowires. The nanocrystal is placed either near the apex of a single silver nanowire or in the gap between two end-to-end aligned silver nanowires. We...

  16. Discrete random distribution of source dopants in nanowire tunnel transistors (TFETs)

    Science.gov (United States)

    Sylvia, Somaia; Abul Khayer, M.; Alam, Khairul; Park, Hong-Hyun; Klimeck, Gerhard; Lake, Roger

    2013-03-01

    InAs and InSb nanowire (NW) tunnel field effect transistors (TFETs) require highly degenerate source doping to support the high electric fields in the tunnel region. For a target on-current of 1 μA , the doping requirement may be as high as 1 . 5 ×1020cm-3 in a NW with diameter as low as 4 nm. The small size of these devices demand that the dopants near tunneling region be treated discretely. Therefore, the effects resulting from the random distribution of dopant atoms in the source of a TFET are studied for 30 test devices. Comparing with the transfer characteristics of the same device simulated with a continuum doping model, our results show (1) a spread of I - V toward the positive gate voltage axis, (2) the same average threshold voltage, (3) an average 62% reduction in the on current, and (4) a slight degradation of the subthreshold slope. Random fluctuations in both the number and placement of dopants will be discussed. Also, as the channel length is scaled down, direct tunneling through the channel starts limiting the device performance. Therefore, a comparison of materials is also performed, showing their ability to block direct tunneling for sub-10 nm channel FETs and TFETs. This work was supported in part by the Center on Functional Engineered Nano Architectonics and the Materials, Structures and Devices Focus Center, under the Focus Center Research Program, and by the National Science Foundation under Grant OCI-0749140

  17. Combining axial and radial nanowire heterostructures: radial Esaki diodes and tunnel field-effect transistors.

    Science.gov (United States)

    Dey, Anil W; Svensson, Johannes; Ek, Martin; Lind, Erik; Thelander, Claes; Wernersson, Lars-Erik

    2013-01-01

    The ever-growing demand on high-performance electronics has generated transistors with very impressive figures of merit (Radosavljevic et al., IEEE Int. Devices Meeting 2009, 1-4 and Cho et al., IEEE Int. Devices Meeting 2011, 15.1.1-15.1.4). The continued scaling of the supply voltage of field-effect transistors, such as tunnel field-effect transistors (TFETs), requires the implementation of advanced transistor architectures including FinFETs and nanowire devices. Moreover, integration of novel materials with high electron mobilities, such as III-V semiconductors and graphene, are also being considered to further enhance the device properties (del Alamo, Nature 2011, 479, 317-323, and Liao et al., Nature 2010, 467, 305-308). In nanowire devices, boosting the drive current at a fixed supply voltage or maintaining a constant drive current at a reduced supply voltage may be achieved by increasing the cross-sectional area of a device, however at the cost of deteriorated electrostatics. A gate-all-around nanowire device architecture is the most favorable electrostatic configuration to suppress short channel effects; however, the arrangement of arrays of parallel vertical nanowires to address the drive current predicament will require additional chip area. The use of a core-shell nanowire with a radial heterojunction in a transistor architecture provides an attractive means to address the drive current issue without compromising neither chip area nor device electrostatics. In addition to design advantages of a radial transistor architecture, we in this work illustrate the benefit in terms of drive current per unit chip area and compare the experimental data for axial GaSb/InAs Esaki diodes and TFETs to their radial counterparts and normalize the electrical data to the largest cross-sectional area of the nanowire, i.e. the occupied chip area, assuming a vertical device geometry. Our data on lateral devices show that radial Esaki diodes deliver almost 7 times higher peak

  18. Tunnel field-effect transistors based on InP-GaAs heterostructure nanowires.

    Science.gov (United States)

    Ganjipour, Bahram; Wallentin, Jesper; Borgström, Magnus T; Samuelson, Lars; Thelander, Claes

    2012-04-24

    We present tunneling field-effect transistors fabricated from InP-GaAs heterostructure nanowires with an n-i-p doping profile, where the intrinsic InP region is modulated by a top gate. The devices show an inverse subthreshold slope down to 50 mV/dec averaged over two decades with an on/off current ratio of approximately 10(7) for a gate voltage swing (V(GS)) of 1 V and an on-current of 2.2 μA/μm. Low-temperature measurements suggest a mechanism of trap-assisted tunneling, possibly explained by a narrow band gap segment of InGaAsP.

  19. Single-atom contacts with a scanning tunnelling microscope

    International Nuclear Information System (INIS)

    Kroeger, J; Neel, N; Sperl, A; Wang, Y F; Berndt, R

    2009-01-01

    The tip of a cryogenic scanning tunnelling microscope is used to controllably contact single atoms adsorbed on metal surfaces. The transition between tunnelling and contact is gradual for silver, while contact to adsorbed gold atoms is abrupt. The single-atom junctions are stable and enable spectroscopic measurements of, e.g., the Abrikosov-Suhl resonance of single Kondo impurities.

  20. Laser-induced single point nanowelding of silver nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Dai, Shuowei; Li, Qiang, E-mail: qiangli@zju.edu.cn; Liu, Guoping; Yang, Hangbo; Yang, Yuanqing; Zhao, Ding; Wang, Wei; Qiu, Min, E-mail: minqiu@zju.edu.cn [State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2016-03-21

    Nanowelding of nanomaterials opens up an emerging set of applications in transparent conductors, thin-film solar cells, nanocatalysis, cancer therapy, and nanoscale patterning. Single point nanowelding (SPNW) is highly demanded for building complex nanostructures. In this letter, the precise control of SPNW of silver nanowires is explored in depth, where the nanowelding is laser-induced through the plasmonic resonance enhanced photothermal effect. It is shown that the illumination position is a critical factor for the nanowelding process. As an example of performance enhancement, output at wire end can be increased by 65% after welding for a plasmonic nanocoupler. Thus, single point nanowelding technique shows great potentials for high-performance electronic and photonic devices based on nanowires, such as nanoelectronic circuits and plasmonic nanodevices.

  1. Laser-induced single point nanowelding of silver nanowires

    International Nuclear Information System (INIS)

    Dai, Shuowei; Li, Qiang; Liu, Guoping; Yang, Hangbo; Yang, Yuanqing; Zhao, Ding; Wang, Wei; Qiu, Min

    2016-01-01

    Nanowelding of nanomaterials opens up an emerging set of applications in transparent conductors, thin-film solar cells, nanocatalysis, cancer therapy, and nanoscale patterning. Single point nanowelding (SPNW) is highly demanded for building complex nanostructures. In this letter, the precise control of SPNW of silver nanowires is explored in depth, where the nanowelding is laser-induced through the plasmonic resonance enhanced photothermal effect. It is shown that the illumination position is a critical factor for the nanowelding process. As an example of performance enhancement, output at wire end can be increased by 65% after welding for a plasmonic nanocoupler. Thus, single point nanowelding technique shows great potentials for high-performance electronic and photonic devices based on nanowires, such as nanoelectronic circuits and plasmonic nanodevices.

  2. Current increment of tunnel field-effect transistor using InGaAs nanowire/Si heterojunction by scaling of channel length

    Science.gov (United States)

    Tomioka, Katsuhiro; Fukui, Takashi

    2014-02-01

    We report on a fabrication of tunnel field-effect transistors using InGaAs nanowire/Si heterojunctions and the characterization of scaling of channel lengths. The devices consisted of single InGaAs nanowires with a diameter of 30 nm grown on p-type Si(111) substrates. The switch demonstrated steep subthreshold-slope (30 mV/decade) at drain-source voltage (VDS) of 0.10 V. Also, pinch-off behavior appeared at moderately low VDS, below 0.10 V. Reducing the channel length of the transistors attained a steep subthreshold slope (<60 mV/decade) and enhanced the drain current, which was 100 higher than that of the longer channels.

  3. Imaging Single ZnO Vertical Nanowire Laser Cavities using UV-Laser Scanning Confocal Microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Gargas, D.J.; Toimil-Molares, M.E.; Yang, P.

    2008-11-17

    We report the fabrication and optical characterization of individual ZnO vertical nanowire laser cavities. Dilute nanowire arrays with interwire spacing>10 ?m were produced by a modified chemical vapor transport (CVT) method yielding an ideal platform for single nanowire imaging and spectroscopy. Lasing characteristics of a single vertical nanowire are presented, as well as high-resolution photoluminescence imaging by UV-laser scanning confocal microscopy. In addition, three-dimensional (3D) mapping of the photoluminescence emission performed in both planar and vertical dimensions demonstrates height-selective imaging useful for vertical nanowires and heteronanostructures emerging in the field of optoelectronics and nanophotonics.

  4. Coherent interaction of single molecules and plasmonic nanowires

    Science.gov (United States)

    Gerhardt, Ilja; Grotz, Bernhard; Siyushev, Petr; Wrachtrup, Jörg

    2017-09-01

    Quantum plasmonics opens the option to integrate complex quantum optical circuitry onto chip scale devices. In the past, often external light sources were used and nonclassical light was coupled in and out of plasmonic structures, such as hole arrays or waveguide structures. Another option to launch single plasmonic excitations is the coupling of single emitters in the direct proximity of, e.g., a silver or gold nanostructure. Here, we present our attempts to integrate the research of single emitters with wet-chemically grown silver nanowires. The emitters of choice are single organic dye molecules under cryogenic conditions, which are known to act as high-brightness and extremely narrow-band single photon sources. Another advantage is their high optical nonlinearity, such that they might mediate photon-photon interactions on the nanoscale. We report on the coupling of a single molecule fluorescence emission through the wire over the length of several wavelengths. The transmission of coherently emitted photons is proven by an extinction type experiment. As for influencing the spectral properties of a single emitter, we are able to show a remote change of the line-width of a single terrylene molecule, which is in close proximity to the nanowire.

  5. Tunneling spectroscopy of a germanium quantum dot in single-hole transistors with self-aligned electrodes

    International Nuclear Information System (INIS)

    Chen, G-L; Kuo, David M T; Lai, W-T; Li, P-W

    2007-01-01

    We have fabricated a Ge quantum dot (QD) (∼10 nm) single-hole transistor with self-aligned electrodes using thermal oxidation of a SiGe-on-insulator nanowire based on FinFET technology. This fabricated device exhibits clear Coulomb blockade oscillations with large peak-to-valley ratio (PVCR) of 250-750 and negative differential conductance with PVCR of ∼12 at room temperature. This reveals that the gate-induced tunneling barrier lowering is effectively suppressed due to the self-aligned electrode structure. The magnitude of tunneling current spectra also reveals the coupling strengths between the energy levels of the Ge QD and electrodes

  6. Characterization and Optical Properties of the Single Crystalline SnS Nanowire Arrays

    Directory of Open Access Journals (Sweden)

    Yue GH

    2009-01-01

    Full Text Available Abstract The SnS nanowire arrays have been successfully synthesized by the template-assisted pulsed electrochemical deposition in the porous anodized aluminum oxide template. The investigation results showed that the as-synthesized nanowires are single crystalline structures and they have a highly preferential orientation. The ordered SnS nanowire arrays are uniform with a diameter of 50 nm and a length up to several tens of micrometers. The synthesized SnS nanowires exhibit strong absorption in visible and near-infrared spectral region and the direct energy gapE gof SnS nanowires is 1.59 eV.

  7. Self-diffusion in single crystalline silicon nanowires

    Science.gov (United States)

    Südkamp, T.; Hamdana, G.; Descoins, M.; Mangelinck, D.; Wasisto, H. S.; Peiner, E.; Bracht, H.

    2018-04-01

    Self-diffusion experiments in single crystalline isotopically controlled silicon nanowires with diameters of 70 and 400 nm at 850 and 1000 °C are reported. The isotope structures were first epitaxially grown on top of silicon substrate wafers. Nanowires were subsequently fabricated using a nanosphere lithography process in combination with inductively coupled plasma dry reactive ion etching. Three-dimensional profiling of the nanosized structure before and after diffusion annealing was performed by means of atom probe tomography (APT). Self-diffusion profiles obtained from APT analyses are accurately described by Fick's law for self-diffusion. Data obtained for silicon self-diffusion in nanowires are equal to the results reported for bulk silicon crystals, i.e., finite size effects and high surface-to-volume ratios do not significantly affect silicon self-diffusion. This shows that the properties of native point defects determined from self-diffusion in bulk crystals also hold for nanosized silicon structures with diameters down to 70 nm.

  8. Crosslinked Functional Polymer Nanowire Formation Along Single Particle Tracks

    International Nuclear Information System (INIS)

    Tagawa, S.

    2006-01-01

    The use of high-energy charged particles has extended to many fields in recent years. In medicine, non-homogeneous energy deposition along an ion trajectory (ion track) plays a crucial role in cancer radiotherapy, allowing for high spatial selectivity in the distribution of the radiation dose. The direct observation and application of ion tracks in media have also attracted interest in materials science, where it is known as nuclear track fabrication. Since the discovery that high-energy particle leave latent tracks in inorganic and organic polymer materials, the technique has also been applied to the production of micro- and nano-sized pores in materials through chemical etching of the tracks. The clear correlation between the etched pore and the characteristics of the incident charged particle has been utilized for measurement of the velocity and mass of the incident particles, and such organic film detectors are widely used in dosimetry, and in particular for galactic cosmic rays in space. The scope of the present paper is the direct nano-structure formation based on crosslinking reactions induced in nano-scale ultra-small spaces of single particle tracks. We have developed the simple one-step formation processes of nanowires without using any chemical etching or refilling processes. The present technique is in striking contrast to the previous 'nuclear track' nanofabrication techniques. According to its high feasibility for the preparation of 1-D nanowires based on 'any' kinds of polymeric materials, the present paper demonstrates the formation of not only simple polymer nanowires but also ceramic and/or multi-segment multi-functional nanowires

  9. High current density Esaki tunnel diodes based on GaSb-InAsSb heterostructure nanowires.

    Science.gov (United States)

    Ganjipour, Bahram; Dey, Anil W; Borg, B Mattias; Ek, Martin; Pistol, Mats-Erik; Dick, Kimberly A; Wernersson, Lars-Erik; Thelander, Claes

    2011-10-12

    We present electrical characterization of broken gap GaSb-InAsSb nanowire heterojunctions. Esaki diode characteristics with maximum reverse current of 1750 kA/cm(2) at 0.50 V, maximum peak current of 67 kA/cm(2) at 0.11 V, and peak-to-valley ratio (PVR) of 2.1 are obtained at room temperature. The reverse current density is comparable to that of state-of-the-art tunnel diodes based on heavily doped p-n junctions. However, the GaSb-InAsSb diodes investigated in this work do not rely on heavy doping, which permits studies of transport mechanisms in simple transistor structures processed with high-κ gate dielectrics and top-gates. Such processing results in devices with improved PVR (3.5) and stability of the electrical properties.

  10. Tunnel field-effect transistor using InAs nanowire/Si heterojunction

    Science.gov (United States)

    Tomioka, Katsuhiro; Fukui, Takashi

    2011-02-01

    We report on fabrication of tunnel field-effect transistor with III-V nanowire (NW)/Si heterojunction and surrounding-gate structure. The device fabricated by selective-area growth of an n+-InAs/undoped-InAs axial NW on a p+-Si(111) substrate showed switching behavior with an average subthreshold slope (SS) of 104 mV/dec under reverse bias condition. The switching behavior appeared under small supply voltage (Vds=50 mV). Transmission electron microscopy revealed misfit dislocation formed at the interface degraded the SS and ON-state current. Coherent growth without misfit dislocations would promise realization of steep-slope transistor with a SS of <60 mV/dec.

  11. Improved Tunnel-FET inverter performance with SiGe/Si heterostructure nanowire TFETs by reduction of ambipolarity

    Science.gov (United States)

    Richter, S.; Trellenkamp, S.; Schäfer, A.; Hartmann, J. M.; Bourdelle, K. K.; Zhao, Q. T.; Mantl, S.

    2015-06-01

    Complementary MOSFET and Tunnel-FET inverters based on tri-gated strained Si nanowire arrays are demonstrated. The voltage transfer characteristics as well as the inverter supply currents of both inverter types are analyzed and compared. A degradation of the inverter output voltage is observed due to the ambipolar transfer characteristics of the symmetric homostructure TFET devices. Emulated TFET inverters based on the measured transfer characteristics of SiGe/Si heterostructure nanowire array n-channel TFETs with reduced ambipolarity demonstrate improved inverter switching for supply voltages down to VDD = 0.2 V.

  12. Method for manufacturing a single crystal nanowire

    NARCIS (Netherlands)

    van den Berg, Albert; Bomer, Johan G.; Carlen, Edwin; Chen, S.; Kraaijenhagen, Roderik Adriaan; Pinedo, Herbert Michael

    2013-01-01

    A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing

  13. Method for manufacturing a single crystal nanowire

    NARCIS (Netherlands)

    van den Berg, Albert; Bomer, Johan G.; Carlen, Edwin; Chen, S.; Kraaijenhagen, R.A.; Pinedo, Herbert Michael

    2010-01-01

    A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing

  14. Quantum dot resonant tunneling diode single photon detector with aluminum oxide aperture defined tunneling area

    DEFF Research Database (Denmark)

    Li, H.W.; Kardynal, Beata; Ellis, D.J.P.

    2008-01-01

    Quantum dot resonant tunneling diode single photon detector with independently defined absorption and sensing areas is demonstrated. The device, in which the tunneling is constricted to an aperture in an insulating layer in the emitter, shows electrical characteristics typical of high quality...... resonant tunneling diodes. A single photon detection efficiency of 2.1%+/- 0.1% at 685 nm was measured corresponding to an internal quantum efficiency of 14%. The devices are simple to fabricate, robust, and show promise for large absorption area single photon detectors based on quantum dot structures....

  15. Electrical properties of single CuO nanowires for device fabrication: Diodes and field effect transistors

    Energy Technology Data Exchange (ETDEWEB)

    Florica, Camelia; Costas, Andreea; Boni, Andra Georgia; Negrea, Raluca; Preda, Nicoleta, E-mail: nicol@infim.ro, E-mail: encu@infim.ro; Pintilie, Lucian; Enculescu, Ionut, E-mail: nicol@infim.ro, E-mail: encu@infim.ro [National Institute of Materials Physics, P.O. Box MG-7, Bucharest, Magurele 077125 (Romania); Ion, Lucian [Faculty of Physics, University of Bucharest, Atomistilor Street 103, Magurele, Ilfov 77125 (Romania)

    2015-06-01

    High aspect ratio CuO nanowires are synthesized by a simple and scalable method, thermal oxidation in air. The structural, morphological, optical, and electrical properties of the semiconducting nanowires were studied. Au-Ti/CuO nanowire and Pt/CuO nanowire electrical contacts were investigated. A dominant Schottky mechanism was evidenced in the Au-Ti/CuO nanowire junction and an ohmic behavior was observed for the Pt/CuO nanowire junction. The Pt/CuO nanowire/Pt structure allows the measurements of the intrinsic transport properties of the single CuO nanowires. It was found that an activation mechanism describes the behavior at higher temperatures, while a nearest neighbor hopping transport mechanism is characteristic at low temperatures. This was also confirmed by four-probe resistivity measurements on the single CuO nanowires. By changing the metal/semiconductor interface, devices such as Schottky diodes and field effect transistors based on single CuO p-type nanowire semiconductor channel are obtained. These devices are suitable for being used in various electronic circuits where their size related properties can be exploited.

  16. Optimised quantum hacking of superconducting nanowire single-photon detectors.

    Science.gov (United States)

    Tanner, Michael G; Makarov, Vadim; Hadfield, Robert H

    2014-03-24

    We explore bright-light control of superconducting nanowire single-photon detectors (SNSPDs) in the shunted configuration (a practical measure to avoid latching). In an experiment, we simulate an illumination pattern the SNSPD would receive in a typical quantum key distribution system under hacking attack. We show that it effectively blinds and controls the SNSPD. The transient blinding illumination lasts for a fraction of a microsecond and produces several deterministic fake clicks during this time. This attack does not lead to elevated timing jitter in the spoofed output pulse, and hence does not introduce significant errors. Five different SNSPD chip designs were tested. We consider possible countermeasures to this attack.

  17. Characterization of parallel superconducting nanowire single photon detectors

    International Nuclear Information System (INIS)

    Ejrnaes, M; Casaburi, A; Pagano, S; Cristiano, R; Quaranta, O; Marchetti, S; Gaggero, A; Mattioli, F; Leoni, R

    2009-01-01

    Superconducting nanowire single photon detectors (SNSPDs) have been realized using an innovative parallel wire configuration. This configuration allows, at the same time, a large detection area and a fast response, with the additional advantage of large signal amplitudes. The detectors have been thoroughly characterized in terms of signal properties (amplitude, risetime and falltime), detector operation (latching and not latching) and quantum efficiency (at 850 nm). It has been shown that the parallel SNSPD is able to provide significantly higher maximum count rates for large area SNSPDs than meandered SNSPDs. Through a proper parallel wire configuration the increase in maximum count rate can be obtained without latching problems.

  18. Characterization of parallel superconducting nanowire single photon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Ejrnaes, M; Casaburi, A; Pagano, S; Cristiano, R [CNR-Istituto di Cibernetica ' E Caianiello' , 80078 Pozzuoli (Namibia) (Italy); Quaranta, O; Marchetti, S [Dipartimento di Fisica ' E R Caianiello' , Universita di Salerno, 84081 Baronissi (Italy); Gaggero, A; Mattioli, F; Leoni, R [CNR-Istituto di Fotonica e Nanotecnologie, 00156 Roma (Italy)

    2009-05-15

    Superconducting nanowire single photon detectors (SNSPDs) have been realized using an innovative parallel wire configuration. This configuration allows, at the same time, a large detection area and a fast response, with the additional advantage of large signal amplitudes. The detectors have been thoroughly characterized in terms of signal properties (amplitude, risetime and falltime), detector operation (latching and not latching) and quantum efficiency (at 850 nm). It has been shown that the parallel SNSPD is able to provide significantly higher maximum count rates for large area SNSPDs than meandered SNSPDs. Through a proper parallel wire configuration the increase in maximum count rate can be obtained without latching problems.

  19. Optimised quantum hacking of superconducting nanowire single-photon detectors

    Science.gov (United States)

    Tanner, Michael G.; Makarov, Vadim; Hadfield, Robert H.

    2014-03-01

    We explore bright-light control of superconducting nanowire single-photon detectors (SNSPDs) in the shunted configuration (a practical measure to avoid latching). In an experiment, we simulate an illumination pattern the SNSPD would receive in a typical quantum key distribution system under hacking attack. We show that it effectively blinds and controls the SNSPD. The transient blinding illumination lasts for a fraction of a microsecond and produces several deterministic fake clicks during this time. This attack does not lead to elevated timing jitter in the spoofed output pulse, and hence does not introduce significant errors. Five different SNSPD chip designs were tested. We consider possible countermeasures to this attack.

  20. InSb Nanowires with Built-In GaxIn1-xSb Tunnel Barriers for Majorana Devices.

    Science.gov (United States)

    Car, Diana; Conesa-Boj, Sonia; Zhang, Hao; Op Het Veld, Roy L M; de Moor, Michiel W A; Fadaly, Elham M T; Gül, Önder; Kölling, Sebastian; Plissard, Sebastien R; Toresen, Vigdis; Wimmer, Michael T; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P; Bakkers, Erik P A M

    2017-02-08

    Majorana zero modes (MZMs), prime candidates for topological quantum bits, are detected as zero bias conductance peaks (ZBPs) in tunneling spectroscopy measurements. Implementation of a narrow and high tunnel barrier in the next generation of Majorana devices can help to achieve the theoretically predicted quantized height of the ZBP. We propose a material-oriented approach to engineer a sharp and narrow tunnel barrier by synthesizing a thin axial segment of Ga x In 1-x Sb within an InSb nanowire. By varying the precursor molar fraction and the growth time, we accurately control the composition and the length of the barriers. The height and the width of the Ga x In 1-x Sb tunnel barrier are extracted from the Wentzel-Kramers-Brillouin (WKB) fits to the experimental I-V traces.

  1. Proton irradiation effects on thermal transport in individual single-crystalline Bi nanowires

    International Nuclear Information System (INIS)

    Roh, Jong Wook; Ko, Dai Ho; Lee, Joo Hee; Kang, Joohoon; Lee, Min Kyung; Lee, Wooyoung; Lee, Cheol Woo; Lee, Kyu Hyoung; Noh, Jin-Seo

    2013-01-01

    We investigated the proton irradiation effect of thermal conductivities for individual single-crystalline Bi nanowires grown by the on-film formation of nanowires (ON-OFF). The thermal conductivities of Bi nanowires with diameter of 154 and 112 nm were measured using suspended devices before and after proton irradiation, respectively. It was founded thermal conductivities of Bi nanowires appreciably decrease after proton irradiation, which was caused by the destruction of single-crystallinity due to the high-energy proton impingement. This result indicates the defects of Bi nanowires created by proton drastically limit the mean free paths of phonons, resulting in the change of thermal transport of Bi nanowires. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  2. Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

    Science.gov (United States)

    Calabrese, Gabriele; Corfdir, Pierre; Gao, Guanhui; Pfüller, Carsten; Trampert, Achim; Brandt, Oliver; Geelhaar, Lutz; Fernández-Garrido, Sergio

    2016-05-01

    We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowires by transmission electron microscopy reveals that they are single crystalline. Low-temperature photoluminescence spectroscopy demonstrates that in comparison to standard GaN nanowires grown on Si, the nanowires prepared on the Ti foil exhibit an equivalent crystalline perfection, a higher density of basal-plane stacking faults, but a reduced density of inversion domain boundaries. The room-temperature photoluminescence spectrum of the nanowire ensemble is not influenced or degraded by the bending of the substrate. The present results pave the way for the fabrication of flexible optoelectronic devices based on GaN nanowires on metal foils.

  3. Molecular beam epitaxy of single crystalline GaN nanowires on a flexible Ti foil

    International Nuclear Information System (INIS)

    Calabrese, Gabriele; Corfdir, Pierre; Gao, Guanhui; Pfüller, Carsten; Trampert, Achim; Brandt, Oliver; Geelhaar, Lutz; Fernández-Garrido, Sergio

    2016-01-01

    We demonstrate the self-assembled growth of vertically aligned GaN nanowire ensembles on a flexible Ti foil by plasma-assisted molecular beam epitaxy. The analysis of single nanowires by transmission electron microscopy reveals that they are single crystalline. Low-temperature photoluminescence spectroscopy demonstrates that in comparison to standard GaN nanowires grown on Si, the nanowires prepared on the Ti foil exhibit an equivalent crystalline perfection, a higher density of basal-plane stacking faults, but a reduced density of inversion domain boundaries. The room-temperature photoluminescence spectrum of the nanowire ensemble is not influenced or degraded by the bending of the substrate. The present results pave the way for the fabrication of flexible optoelectronic devices based on GaN nanowires on metal foils.

  4. Strong room-temperature negative transconductance in an axial Si/Ge hetero-nanowire tunneling field-effect transistor

    Science.gov (United States)

    Zhang, Peng; Le, Son T.; Hou, Xiaoxiao; Zaslavsky, A.; Perea, Daniel E.; Dayeh, Shadi A.; Picraux, S. T.

    2014-08-01

    We report on room-temperature negative transconductance (NTC) in axial Si/Ge hetero-nanowire tunneling field-effect transistors. The NTC produces a current peak-to-valley ratio >45, a high value for a Si-based device. We characterize the NTC over a range of gate VG and drain VD voltages, finding that NTC persists down to VD = -50 mV. The physical mechanism responsible for the NTC is the VG-induced depletion in the p-Ge section that eventually reduces the maximum electric field that triggers the tunneling ID, as confirmed via three-dimensional (3D) technology computer-aided design simulations.

  5. Light-Induced Charge Transport within a Single Asymmetric Nanowire

    Energy Technology Data Exchange (ETDEWEB)

    LIU, CHONG; HWANG, YUN YEONG; JEONG, HOON EIU; YANG, PEIDONG

    2011-01-21

    Artificial photosynthetic systems using semiconductor materials have been explored for more than three decades in order to store solar energy in chemical fuels such as hydrogen. By mimicking biological photosynthesis with two light-absorbing centers that relay excited electrons in a nanoscopic space, a dual-band gap photoelectrochemical (PEC) system is expected to have higher theoretical energy conversion efficiency than a single band gap system. This work demonstrates the vectorial charge transport of photo-generated electrons and holes within a single asymmetric Si/TiO2 nanowire using Kelvin probe force microscopy (KPFM). Under UV illumination, higher surface potential was observed on the n-TiO₂ side, relative to the potential of the p-Si side, as a result of majority carriers’ recombination at the Si/TiO₂ interface. These results demonstrate a new approach to investigate charge separation and transport in a PEC system. This asymmetric nanowire heterostructure, with a dual band gap configuration and simultaneously exposed anode and cathode surfaces represents an ideal platform for the development of technologies for the generation of solar fuels, although better photoanode materials remain to be discovered.

  6. Doped niobium superconducting nanowire single-photon detectors

    Science.gov (United States)

    Jia, Tao; Kang, Lin; Zhang, Labao; Zhao, Qingyuan; Gu, Min; Qiu, Jian; Chen, Jian; Jin, Biaobing

    2014-09-01

    We designed and fabricated a special doped niobium (Nb*) superconducting nanowire single-photon detector (SNSPD) on MgO substrate. The superconductivity of this ultra-thin Nb* film was further improved by depositing an ultra-thin aluminum nitride protective layer on top. Compared with traditional Nb films, Nb* films present higher T C and J C. We investigated the dependence of the characteristics of devices, such as cut-off wavelength, response bandwidth, and temperature, on their geometrical dimensions. Results indicate that reduction in both the width and thickness of Nb* nanowires extended the cut-off wavelength and improved the sensitivity. The Nb* SNSPD (50 nm width and 4.5 nm thickness) exhibited single-photon sensitivities at 1,310, 1,550, and 2,010 nm. We also demonstrated an enhancement in the detection efficiency by a factor of 10 in its count rate by lowering the working temperature from 2.26 K to 315 mK.

  7. Asymmetric tunable tunneling magnetoresistance in single-electron transistors

    CERN Document Server

    Pirmann, M; Schön, G

    2000-01-01

    We show that the tunneling magnetoresistance (TMR) of a ferromagnetic single-electron transistor in the sequential tunneling regime shows asymmetric Coulomb blockade oscillations as a function of gate voltage if the individual junction-TMRs differ. The relative amplitude of these oscillations grows significantly if the bias voltage is increased, becoming as large as 30% when the bias voltage is comparable to the charging energy of the single-electron transistor. This might be useful for potential applications requiring a tunable TMR.

  8. Reliability of Single Crystal Silver Nanowire-Based Systems: Stress Assisted Instabilities.

    Science.gov (United States)

    Ramachandramoorthy, Rajaprakash; Wang, Yanming; Aghaei, Amin; Richter, Gunther; Cai, Wei; Espinosa, Horacio D

    2017-05-23

    Time-dependent mechanical characterization of nanowires is critical to understand their long-term reliability in applications, such as flexible-electronics and touch screens. It is also of great importance to develop a theoretical framework for experimentation and analysis on the mechanics of nanowires under time-dependent loading conditions, such as stress-relaxation and fatigue. Here, we combine in situ scanning electron microscope (SEM)/transmission electron microscope (TEM) tests with atomistic and phase-field simulations to understand the deformation mechanisms of single crystal silver nanowires held under constant strain. We observe that the nanowires initially undergo stress-relaxation, where the stress reduces with time and saturates after some time period. The stress-relaxation process occurs due to the formation of few dislocations and stacking faults. Remarkably, after a few hours the nanowires rupture suddenly. The reason for this abrupt failure of the nanowire was identified as stress-assisted diffusion, using phase-field simulations. Under a large applied strain, diffusion leads to the amplification of nanowire surface perturbation at long wavelengths and the nanowire fails at the stress-concentrated thin cross-sectional regions. An analytical analysis on the competition between the elastic energy and the surface energy predicts a longer time to failure for thicker nanowires than thinner ones, consistent with our experimental observations. The measured time to failure of nanowires under cyclic loading conditions can also be explained in terms of this mechanism.

  9. Controlling growth density and patterning of single crystalline silicon nanowires

    International Nuclear Information System (INIS)

    Chang, Tung-Hao; Chang, Yu-Cheng; Liu, Fu-Ken; Chu, Tieh-Chi

    2010-01-01

    This study examines the usage of well-patterned Au nanoparticles (NPs) as a catalyst for one-dimensional growth of single crystalline Si nanowires (NWs) through the vapor-liquid-solid (VLS) mechanism. The study reports the fabrication of monolayer Au NPs through the self-assembly of Au NPs on a 3-aminopropyltrimethoxysilane (APTMS)-modified silicon substrate. Results indicate that the spin coating time of Au NPs plays a crucial role in determining the density of Au NPs on the surface of the silicon substrate and the later catalysis growth of Si NWs. The experiments in this study employed optical lithography to pattern Au NPs, treating them as a catalyst for Si NW growth. The patterned Si NW structures easily produced and controlled Si NW density. This approach may be useful for further studies on single crystalline Si NW-based nanodevices and their properties.

  10. Fabrication of magnetic tunnel junctions with a single-crystalline LiF tunnel barrier

    Science.gov (United States)

    Krishna Narayananellore, Sai; Doko, Naoki; Matsuo, Norihiro; Saito, Hidekazu; Yuasa, Shinji

    2018-04-01

    We fabricated Fe/LiF/Fe magnetic tunnel junctions (MTJs) by molecular beam epitaxy on a MgO(001) substrate, where LiF is an insulating tunnel barrier with the same crystal structure as MgO (rock-salt type). Crystallographical studies such as transmission electron microscopy and nanobeam electron diffraction observations revealed that the LiF tunnel barrier is single-crystalline and has a LiF(001)[100] ∥ bottom Fe(001)[110] crystal orientation, which is constructed in the same manner as MgO(001) on Fe(001). Also, the in-plane lattice mismatch between the LiF tunnel barrier and the Fe bottom electrode was estimated to be small (about 0.5%). Despite such advantages for the tunnel barrier of the MTJ, the observed tunnel magnetoresistance (MR) ratio was low (˜6% at 20 K) and showed a significant decrease with increasing temperature (˜1% at room temperature). The results imply that indirect tunneling and/or thermally excited carriers in the LiF tunnel barrier, in which the current basically is not spin-polarized, play a major role in electrical transport in the MTJ.

  11. Inelastic electron tunneling spectroscopy of a single nuclear spin.

    Science.gov (United States)

    Delgado, F; Fernández-Rossier, J

    2011-08-12

    Detection of a single nuclear spin constitutes an outstanding problem in different fields of physics such as quantum computing or magnetic imaging. Here we show that the energy levels of a single nuclear spin can be measured by means of inelastic electron tunneling spectroscopy (IETS). We consider two different systems, a magnetic adatom probed with scanning tunneling microscopy and a single Bi dopant in a silicon nanotransistor. We find that the hyperfine coupling opens new transport channels which can be resolved at experimentally accessible temperatures. Our simulations evince that IETS yields information about the occupations of the nuclear spin states, paving the way towards transport-detected single nuclear spin resonance.

  12. Microwave-induced co-tunneling in single electron tunneling transistors

    DEFF Research Database (Denmark)

    Ejrnaes, M.; Savolainen, M.; Manscher, M.

    2002-01-01

    on rubber bellows. Cross-talk was minimized by using individual coaxial lines between the sample and the room temperature electronics: The co-tunneling experiments were performed at zero DC bias current by measuring the voltage response to a very small amplitude 2 Hz current modulation with the gate voltage......The influence of microwaves on the co-tunneling in single electron tunneling transistors has been investigated as function of frequency and power in the temperature range from 150 to 500 mK. All 20 low frequency connections and the RF line were filtered, and the whole cryostat was suspended...

  13. A High-Efficiency Photonic Nanowire Single-Photon Source Featuring An Inverted Conical Taper

    DEFF Research Database (Denmark)

    Gregersen, Niels; Nielsen, Torben Roland; Mørk, Jesper

    2011-01-01

    A photonic nanowire single-photon source design incorporating an inverted conical tapering is proposed. The inverted taper allows for easy electrical contacting and a high photon extraction efficiency of 89 %. Unlike cavity-based approaches, the photonic nanowire features broadband spontaneous...... emission control and an improved tolerance towards fabrication imperfections....

  14. A high-efficiency electrically-pumped single-photon source based on a photonics nanowire

    DEFF Research Database (Denmark)

    Gregersen, Niels; Nielsen, Torben Roland; Mørk, Jesper

    An electrically-pumped single-photon source design with a predicted efficiency of 89% is proposed. The design is based on a quantum dot embedded in a photonic nanowire with tailored ends and optimized contact electrodes. Unlike cavity-based approaches, the photonic nanowire features broadband...

  15. Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

    Science.gov (United States)

    Pud, S.; Gasparyan, F.; Petrychuk, M.; Li, J.; Offenhäusser, A.; Vitusevich, S. A.

    2014-06-01

    Liquid-gated silicon nanowire (NW) field effect transistors (FETs) are fabricated and their transport and dynamic properties are investigated experimentally and theoretically. Random telegraph signal (RTS) fluctuations were registered in the nanolength channel FETs and used for the experimental and theoretical analysis of transport properties. The drain current and the carrier interaction processes with a single trap are analyzed using a quantum-mechanical evaluation of carrier distribution in the channel and also a classical evaluation. Both approaches are applied to treat the experimental data and to define an appropriate solution for describing the drain current behavior influenced by single trap resulting in RTS fluctuations in the Si NW FETs. It is shown that quantization and tunneling effects explain the behavior of the electron capture time on the single trap. Based on the experimental data, parameters of the single trap were determined. The trap is located at a distance of about 2 nm from the interface Si/SiO2 and has a repulsive character. The theory of dynamic processes in liquid-gated Si NW FET put forward here is in good agreement with experimental observations of transport in the structures and highlights the importance of quantization in carrier distribution for analyzing dynamic processes in the nanostructures.

  16. Highly sensitive single polyaniline nanowire biosensor for the detection of immunoglobulin G and myoglobin

    Science.gov (United States)

    Lee, Innam; Luo, Xiliang; Cui, Xinyan Tracy; Yun, Minhee

    2011-01-01

    A single polyaniline (PANI) nanowire-based biosensor was established to detect immunoglobulin G (IgG) and myoglobin (Myo), which is one of the cardiac biomarkers. The single PANI nanowires were fabricated via an electrochemical growth method, in which single nanowires were formed between a pair of patterned electrodes. The single PANI nanowires were functionalized with monoclonal antibodies (mAbs) of IgG or Myo via a surface immobilization method, using 1-ethyl-3-(3-dimethyaminopropyl) carbodiimide (EDC), and N-Hydroxysuccinimde (NHS). The functionalization was then verified by Raman spectroscopy and fluorescence microscopy. The target proteins of IgG and Myo were detected by measuring the conductance change of functionalized single PANI nanowires owing to the capturing of target proteins by mAbs. The detection limit was found to be 3 ng/mL for IgG and 1.4 ng/mL for Myo. No response was observed when single nanowires were exposed to a non-specific protein demonstrating excellent specificity to expected target detection. Together with the fast response time (a few seconds), high sensitivity, and good specificity, this single PANI nanowire-based biosensor shows great promise in the detection of cardiac markers and other proteins. PMID:21269820

  17. Investigation of analog/RF performance of staggered heterojunctions based nanowire tunneling field-effect transistors

    Science.gov (United States)

    Chakraborty, Avik; Sarkar, Angsuman

    2015-04-01

    In this paper, the analog/RF performance of an III-V semiconductor based staggered hetero-tunnel-junction (HETJ) n-type nanowire (NW) tunneling FET (n-TFET) is investigated, for the first time. The device performance figure-of-merits governing the analog/RF performance such as transconductance (gm), transconductance-to-drive current ratio (gm/IDS), output resistance (Rout), intrinsic gain and unity-gain cutoff frequency (fT) have been studied. The analog/RF performance parameters is compared between HETJ NW TFET and a homojunction (HJ) NW n-type TFET of similar dimensions. In addition to enhanced ION and subthreshold swing, a significant improvement in the analog/RF performance parameters obtained by the HETJ n-TFET over HJ counterpart for use in analog/mixed signal System-on-Chip (SoC) applications is reported. Moreover, the analog/RF performance parameters of a III-V based staggered HETJ NW TFET is also compared with a heterojunction (HETJ) NW n-type MOSFET having same material as HETJ n-TFET and equal dimension in order to provide a systematic comparison between HETJ-TFET and HETJ-MOSFET for use in analog/mixed-signal applications. The results reveal that HETJ n-TFET provides higher Rout and hence, a higher intrinsic gain, an improved gm/IDS ratio, and reasonable fT at lower values of gate-overdrive voltage as compared to the HETJ NW n-MOSFET.

  18. Superconducting nanowire single-photon detectors: physics and applications

    International Nuclear Information System (INIS)

    Natarajan, Chandra M; Tanner, Michael G; Hadfield, Robert H

    2012-01-01

    Single-photon detectors based on superconducting nanowires (SSPDs or SNSPDs) have rapidly emerged as a highly promising photon-counting technology for infrared wavelengths. These devices offer high efficiency, low dark counts and excellent timing resolution. In this review, we consider the basic SNSPD operating principle and models of device behaviour. We give an overview of the evolution of SNSPD device design and the improvements in performance which have been achieved. We also evaluate device limitations and noise mechanisms. We survey practical refrigeration technologies and optical coupling schemes for SNSPDs. Finally we summarize promising application areas, ranging from quantum cryptography to remote sensing. Our goal is to capture a detailed snapshot of an emerging superconducting detector technology on the threshold of maturity. (topical review)

  19. Single-electron tunneling in InP nanowires

    NARCIS (Netherlands)

    De Franceschi, S.; Van Dam, J.A.; Bakkers, E.P.A.M.; Feiner, L.F.; Gurevich, L.; Kouwenhoven, P.

    2003-01-01

    We report on the fabrication and electrical characterization of field-effect devices based on wire-shaped InP crystals grown from Au catalyst particles by a vapor–liquid–solid process. Our InP wires are n-type doped with diameters in the 40–55-nm range and lengths of several micrometers. After being

  20. Theory of single-spin inelastic tunneling spectroscopy.

    Science.gov (United States)

    Fernández-Rossier, J

    2009-06-26

    I show that recent experiments of inelastic scanning tunneling spectroscopy of single and a few magnetic atoms are modeled with a phenomenological spin-assisted tunneling Hamiltonian so that the inelastic dI/dV line shape is related to the spin spectral weight of the magnetic atom. This accounts for the spin selection rules and dI/dV spectra observed experimentally for single Fe and Mn atoms deposited on Cu2N. In the case of chains of Mn atoms it is found necessary to include both first and second-neighbor exchange interactions as well as single-ion anisotropy.

  1. Nanolithography based contacting method for electrical measurements on single template synthesized nanowires

    DEFF Research Database (Denmark)

    Fusil, S.; Piraux, L.; Mátéfi-Tempfli, Stefan

    2005-01-01

    A reliable method enabling electrical measurements on single nanowires prepared by electrodeposition in an alumina template is described. This technique is based on electrically controlled nanoindentation of a thin insulating resist deposited on the top face of the template filled by the nanowires....... We show that this method is very flexible, allowing us to electrically address single nanowires of controlled length down to 100 nm and of desired composition. Using this approach, current densities as large as 10 A cm were successfully injected through a point contact on a single magnetic...

  2. Multiple silicon nanowire complementary tunnel transistors for ultralow-power flexible logic applications

    Science.gov (United States)

    Lee, M.; Jeon, Y.; Jung, J.-C.; Koo, S.-M.; Kim, S.

    2012-06-01

    Based on experimental and simulation studies to gain insight into the suppression of ambipolar conduction in two distinct tunnel field-effect transistor (TFET) devices (that is, an asymmetric source-drain doping or a properly designed gate underlap), here we report on the fabrication and electrical/mechanical characterization of a flexible complementary TFET (c-TFET) inverter on a plastic substrate using multiple silicon nanowires (SiNWs) as the channel material. The static voltage transfer characteristic of the SiNW c-TFET inverter exhibits a full output voltage swing between 0 V and Vdd with a high voltage gain of ˜29 and a sharp transition of 0.28 V at Vdd = 3 V. A leakage power consumption of the SiNW c-TFET inverter in the standby state is as low as 17.1 pW for Vdd = 3 V. Moreover, its mechanical bendability indicates that it has good fatigue properties, providing an important step towards the realization of ultralow-power flexible logic circuits.

  3. Synthesis of Single Crystal GaN Nanowires

    Directory of Open Access Journals (Sweden)

    Lining Fang

    2016-05-01

    Full Text Available The straight and curved gallium nitride (GaN nanowires were successfully synthesized by controlling the gallium/ nitrogen reactant ratio via a chemical vapour deposition method. The structure and morphology of nanowires were characterized by X-ray diffraction (XRD, transmission electronic microscopy (TEM, field emission scanning electron microscopy (FESEM, selected area electron diffraction (SAED and high resolution transmission electron microscopy (HRTEM. The straight and curved GaN nanowires are composed of wurtzite and a zinc blende structure, respectively. Photoluminescence (PL spectra of zinc blende GaN nanowires showed a strong UV emission band at 400 nm, indicating potential application in optoe‐ lectronic devices.

  4. CdS nanowires formed by chemical synthesis using conjugated single-stranded DNA molecules

    Science.gov (United States)

    Sarangi, S. N.; Sahu, S. N.; Nozaki, S.

    2018-03-01

    CdS nanowires were successfully grown by chemical synthesis using two conjugated single-stranded (ss) DNA molecules, poly G (30) and poly C (30), as templates. During the early stage of the synthesis with the DNA molecules, the Cd 2+ interacts with Poly G and Poly C and produces the (Cd 2+)-Poly GC complex. As the growth proceeds, it results in nanowires. The structural analysis by grazing angle x-ray diffraction and transmission electron microscopy confirmed the zinc-blende CdS nanowires with the growth direction of . Although the nanowires are well surface-passivated with the DNA molecules, the photoluminescence quenching was caused by the electron transfer from the nanowires to the DNA molecules. The quenching can be used to detect and label the DNAs.

  5. Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current

    Science.gov (United States)

    Gasparyan, F.; Zadorozhnyi, I.; Vitusevich, S.

    2015-05-01

    The basic reason for enhanced electron capture time, τ c , of the oxide single trap dependence on drain current in the linear operation regime of p+-p-p+ silicon field effect transistors (FETs) was established, using a quantum-mechanical approach. A strong increase of τ c slope dependence on channel current is explained using quantization and tunneling concepts in terms of strong field dependence of the oxide layer single trap effective cross-section, which can be described by an amplification factor. Physical interpretation of this parameter deals with the amplification of the electron cross-section determined by both decreasing the critical field influence as a result of the minority carrier depletion and the potential barrier growth for electron capture. For the NW channel of n+-p-n+ FETs, the experimentally observed slope of τ c equals (-1). On the contrary, for the case of p+-p-p+ Si FETs in the accumulation regime, the experimentally observed slope of τ c equals (-2.8). It can be achieved when the amplification factor is about 12. Extraordinary high capture time slope values versus current are explained by the effective capture cross-section growth with decreasing electron concentration close to the nanowire-oxide interface.

  6. A two-colour heterojunction unipolar nanowire light-emitting diode by tunnel injection

    OpenAIRE

    Zimmler, Mariano A.; Bao, Jiming; Shalish, Ilan; Yi, Wei; Narayanamurti, Venkatesh; Capasso, Federico

    2007-01-01

    We present a systematic study of the current-voltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both semiconductors are n-type. A novel feature of this device is that by reversing the polarity of the applied voltage the luminescence can be selectively obtained from either the nanowire or the substrate. For one polarity of the applied voltage, ultraviolet (and visible) light is generated in the GaN nanowire, while ...

  7. Simulation of single-electron tunnelling circuits using SPICE

    NARCIS (Netherlands)

    Van de Haar, R.

    2004-01-01

    Single-electron tunnelling (SET) devices have very promising properties, like their extremely low power consumption, their extremely high switching speeds and their extremely small physical dimensions. Since the field of SET devices is far from being fully exploited, and their device properties seem

  8. Fabrication of enzyme-degradable and size-controlled protein nanowires using single particle nano-fabrication technique

    Science.gov (United States)

    Omichi, Masaaki; Asano, Atsushi; Tsukuda, Satoshi; Takano, Katsuyoshi; Sugimoto, Masaki; Saeki, Akinori; Sakamaki, Daisuke; Onoda, Akira; Hayashi, Takashi; Seki, Shu

    2014-04-01

    Protein nanowires exhibiting specific biological activities hold promise for interacting with living cells and controlling and predicting biological responses such as apoptosis, endocytosis and cell adhesion. Here we report the result of the interaction of a single high-energy charged particle with protein molecules, giving size-controlled protein nanowires with an ultra-high aspect ratio of over 1,000. Degradation of the human serum albumin nanowires was examined using trypsin. The biotinylated human serum albumin nanowires bound avidin, demonstrating the high affinity of the nanowires. Human serum albumin-avidin hybrid nanowires were also fabricated from a solid state mixture and exhibited good mechanical strength in phosphate-buffered saline. The biotinylated human serum albumin nanowires can be transformed into nanowires exhibiting a biological function such as avidin-biotinyl interactions and peroxidase activity. The present technique is a versatile platform for functionalizing the surface of any protein molecule with an extremely large surface area.

  9. Spatial mapping of exciton lifetimes in single ZnO nanowires

    Directory of Open Access Journals (Sweden)

    J. S. Reparaz

    2013-07-01

    Full Text Available We investigate the spatial dependence of the exciton lifetimes in single ZnO nanowires. We have found that the free exciton and bound exciton lifetimes exhibit a maximum at the center of nanowires, while they decrease by 30% towards the tips. This dependence is explained by considering the cavity-like properties of the nanowires in combination with the Purcell effect. We show that the lifetime of the bound-excitons scales with the localization energy to the power of 3/2, which validates the model of Rashba and Gurgenishvili at the nanoscale.

  10. The photonic nanowire: A highly efficient single-photon source

    DEFF Research Database (Denmark)

    Gregersen, Niels

    2014-01-01

    The photonic nanowire represents an attractive platform for a quantum light emitter. However, careful optical engineering using the modal method, which elegantly allows access to all relevant physical parameters, is crucial to ensure high efficiency.......The photonic nanowire represents an attractive platform for a quantum light emitter. However, careful optical engineering using the modal method, which elegantly allows access to all relevant physical parameters, is crucial to ensure high efficiency....

  11. An AlGaN Core-Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band.

    Science.gov (United States)

    Sadaf, S M; Zhao, S; Wu, Y; Ra, Y-H; Liu, X; Vanka, S; Mi, Z

    2017-02-08

    To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV) spectral range exhibit very low efficiency due to the presence of large densities of defects and extremely inefficient p-type conduction of conventional AlGaN quantum well heterostructures. We have demonstrated that such critical issues can be potentially addressed by using nearly defect-free AlGaN tunnel junction core-shell nanowire heterostructures. The core-shell nanowire arrays exhibit high photoluminescence efficiency (∼80%) in the UV-C band at room temperature. With the incorporation of an epitaxial Al tunnel junction, the p-(Al)GaN contact-free nanowire deep UV LEDs showed nearly one order of magnitude reduction in the device resistance, compared to the conventional nanowire p-i-n device. The unpackaged Al tunnel junction deep UV LEDs exhibit an output power >8 mW and a peak external quantum efficiency ∼0.4%, which are nearly one to two orders of magnitude higher than previously reported AlGaN nanowire devices. Detailed studies further suggest that the maximum achievable efficiency is limited by electron overflow and poor light extraction efficiency due to the TM polarized emission.

  12. A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications

    Science.gov (United States)

    Molaei Imen Abadi, Rouzbeh; Saremi, Mehdi

    2018-02-01

    In this paper, the influence of ultra-scaled physical symmetrical contraction on electrical characteristics of ultra-thin silicon-on-insulator nanowires with circular gate-all-around structure is investigated by using a 3D Atlas numerical quantum simulator based on non-equilibrium green's function formalism. It is demonstrated that local cross-section variation in a nanowire transistor results in the establishment of tunnel energy barriers at the source-channel and drain-channel junctions which change device physics and cause a transmission from a quantum wire (1-D) to a floating quantum dot nanowire (0-D) introducing a resonant tunneling nanowire FET (RT-NWFET) as an interesting concept of nanoscale MOSFETs. The barriers construct resonance energy levels in the channel region of nanowires because of the longitudinal confinement in three directions causing some fluctuation in I D- V GS characteristic. In addition, these barriers remarkably improve the subthreshold swing and minimize the ON/OFF-current ratio degradation at a low operation voltage of 0.5 V. As a result, RT-NWFETs are intrinsically preserved from drain-source tunneling and are an interesting candidate for developing the roadmap below 10 nm.

  13. Metal-Catalyst-Free Synthesis and Characterization of Single-Crystalline Silicon Oxynitride Nanowires

    Directory of Open Access Journals (Sweden)

    Shuang Xi

    2012-01-01

    Full Text Available Large quantities of single-crystal silicon oxynitride nanowires with high N concentration have been synthesized directly on silicon substrate at 1200°C without using any metal catalyst. The diameter of these ternary nanowires is ranging from 10 to 180 nm with log-normal distribution, and the length of these nanowires varies from a few hundreds of micrometers to several millimeters. A vapor-solid mechanism was proposed to explain the growth of the nanowires. These nanowires are grown to form a disordered mat with an ultrabright white nonspecular appearance. The mat demonstrates highly diffusive reflectivity with the optical reflectivity of around 80% over the whole visible wavelength, which is comparable to the most brilliant white beetle scales found in nature. The whiteness might be resulted from the strong multiscattering of a large fraction of incident light on the disordered nanowire mat. These ultra-bright white nanowires could form as reflecting surface to meet the stringent requirements of bright-white light-emitting-diode lighting for higher optical efficiency. They can also find applications in diverse fields such as sensors, cosmetics, paints, and tooth whitening.

  14. Multispectral absorptance from large-diameter InAsSb nanowire arrays in a single epitaxial growth on silicon

    Science.gov (United States)

    Robson, Mitchell; Azizur-Rahman, Khalifa M.; Parent, Daniel; Wojdylo, Peter; Thompson, David A.; LaPierre, Ray R.

    2017-12-01

    Vertical III-V nanowires are capable of resonant absorption at specific wavelengths by tuning the nanowire diameter, thereby exceeding the absorption of equivalent thin films. These properties may be exploited to fabricate multispectral infrared (IR) photodetectors, directly integrated with Si, without the need for spectral filters or vertical stacking of heterostructures as required in thin film devices. In this study, multiple InAsSb nanowire arrays were grown simultaneously on Si by molecular beam epitaxy with nanowire diameter controlled by the nanowire period (spacing between nanowires). This is the first such study of patterned InAsSb nanowires where control of nanowire diameter and multispectral absorption are demonstrated. The antimony flux was used to control axial and radial growth rates using a selective-area catalyst-free growth method, achieving large diameters, spanning 440–520 nm, which are necessary for optimum IR absorption. Fourier transform IR spectroscopy revealed IR absorptance peaks due to the HE11 resonance of the nanowire arrays in agreement with optical simulations. Due to the dependence of the HE11 resonance absorption on nanowire diameter, multispectral absorption was demonstrated in a single material system and a single epitaxial growth step without the need for bandgap tuning. This work demonstrates the potential of InAsSb nanowires for multispectral photodetectors and sensor arrays in the short-wavelength IR region.

  15. Polarized and resonant Raman spectroscopy on single InAs nanowires

    Science.gov (United States)

    Möller, M.; de Lima, M. M., Jr.; Cantarero, A.; Dacal, L. C. O.; Madureira, J. R.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.

    2011-08-01

    We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E1 transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculations of the electronic band structure for wurtzite and zinc-blende InAs phases corroborate the observed values for the E1 transitions.

  16. Realization of single and double axial InSb-GaSb heterostructure nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Ghalamestani, Sepideh Gorji [Solid State Physics, Lund University, Lund (Sweden); Ek, Martin [Center for Analysis and Synthesis, Lund University, Lund (Sweden); Dick, Kimberly A. [Solid State Physics, Lund University, Lund (Sweden); Center for Analysis and Synthesis, Lund University, Lund (Sweden)

    2014-03-15

    Heteroepitaxial growth of III-Sb nanowires allows for the formation of various interesting complex structures and enables the combination of their remarkable properties. In this Letter, we investigate the heteroepitaxial growth of Au-seeded InSb and GaSb nanowires using metalorganic vapor phase epitaxy. We demonstrate successful single and double axial InSb-GaSb heterostructures in both directions. The formation properties of the grown nanowires including the compositional change of the particle and the interface sharpness are further discussed. In addition, the decomposition of InSb and GaSb segments and their side facet evolution are explained. XEDS compositional line scans overlaid on STEM HAADF image along the InSb-GaSb-InSb nanowire indicating sharp interface from GaSb to InSb segment and graded interface in the opposite direction. (copyright 2014 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. Mapping the "forbidden" transverse-optical phonon in single strained silicon (100) nanowire.

    Science.gov (United States)

    Tarun, Alvarado; Hayazawa, Norihiko; Ishitobi, Hidekazu; Kawata, Satoshi; Reiche, Manfred; Moutanabbir, Oussama

    2011-11-09

    The accurate manipulation of strain in silicon nanowires can unveil new fundamental properties and enable novel or enhanced functionalities. To exploit these potentialities, it is essential to overcome major challenges at the fabrication and characterization levels. With this perspective, we have investigated the strain behavior in nanowires fabricated by patterning and etching of 15 nm thick tensile strained silicon (100) membranes. To this end, we have developed a method to excite the "forbidden" transverse-optical (TO) phonons in single tensile strained silicon nanowires using high-resolution polarized Raman spectroscopy. Detecting this phonon is critical for precise analysis of strain in nanoscale systems. The intensity of the measured Raman spectra is analyzed based on three-dimensional field distribution of radial, azimuthal, and linear polarizations focused by a high numerical aperture lens. The effects of sample geometry on the sensitivity of TO measurement are addressed. A significantly higher sensitivity is demonstrated for nanowires as compared to thin layers. In-plane and out-of-plane strain profiles in single nanowires are obtained through the simultaneous probe of local TO and longitudinal-optical (LO) phonons. New insights into strained nanowires mechanical properties are inferred from the measured strain profiles.

  18. Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers.

    Science.gov (United States)

    Li, Changyi; Wright, Jeremy B; Liu, Sheng; Lu, Ping; Figiel, Jeffrey J; Leung, Benjamin; Chow, Weng W; Brener, Igal; Koleske, Daniel D; Luk, Ting-Shan; Feezell, Daniel F; Brueck, S R J; Wang, George T

    2017-02-08

    We report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core-shell single-nanowire lasers by optical pumping at room temperature. The nanowire lasers were fabricated using a hybrid approach consisting of a top-down two-step etch process followed by a bottom-up regrowth process, enabling precise geometrical control and high material gain and optical confinement. The modal gain spectra and the gain curves of the core-shell nanowire lasers were measured using micro-photoluminescence and analyzed using the Hakki-Paoli method. Significantly lower lasing thresholds due to high optical gain were measured compared to previously reported semipolar InGaN/GaN core-shell nanowires, despite significantly shorter cavity lengths and reduced active region volume. Mode simulations show that due to the core-shell architecture, annular-shaped modes have higher optical confinement than solid transverse modes. The results show the viability of this p-i-n nonpolar core-shell nanowire architecture, previously investigated for next-generation light-emitting diodes, as low-threshold, coherent UV-visible nanoscale light emitters, and open a route toward monolithic, integrable, electrically injected single-nanowire lasers operating at room temperature.

  19. Evaluation of magnetic flux distribution from magnetic domains in [Co/Pd] nanowires by magnetic domain scope method using contact-scanning of tunneling magnetoresistive sensor

    Energy Technology Data Exchange (ETDEWEB)

    Okuda, Mitsunobu, E-mail: okuda.m-ky@nhk.or.jp; Miyamoto, Yasuyoshi; Miyashita, Eiichi; Hayashi, Naoto [NHK Science and Technology Research Laboratories, 1-10-11 Kinuta Setagaya, Tokyo 157-8510 (Japan)

    2014-05-07

    Current-driven magnetic domain wall motions in magnetic nanowires have attracted great interests for physical studies and engineering applications. The magnetic force microscope (MFM) is widely used for indirect verification of domain locations in nanowires, where relative magnetic force between the local domains and the MFM probe is used for detection. However, there is an occasional problem that the magnetic moments of MFM probe influenced and/or rotated the magnetic states in the low-moment nanowires. To solve this issue, the “magnetic domain scope for wide area with nano-order resolution (nano-MDS)” method has been proposed recently that could detect the magnetic flux distribution from the specimen directly by scanning of tunneling magnetoresistive field sensor. In this study, magnetic domain structure in nanowires was investigated by both MFM and nano-MDS, and the leakage magnetic flux density from the nanowires was measured quantitatively by nano-MDS. Specimen nanowires consisted from [Co (0.3)/Pd (1.2)]{sub 21}/Ru(3) films (units in nm) with perpendicular magnetic anisotropy were fabricated onto Si substrates by dual ion beam sputtering and e-beam lithography. The length and the width of the fabricated nanowires are 20 μm and 150 nm. We have succeeded to obtain not only the remanent domain images with the detection of up and down magnetizations as similar as those by MFM but also magnetic flux density distribution from nanowires directly by nano-MDS. The obtained value of maximum leakage magnetic flux by nano-MDS is in good agreement with that of coercivity by magneto-optical Kerr effect microscopy. By changing the protective diamond-like-carbon film thickness on tunneling magnetoresistive sensor, the three-dimensional spatial distribution of leakage magnetic flux could be evaluated.

  20. Capillarity creates single-crystal calcite nanowires from amorphous calcium carbonate.

    Science.gov (United States)

    Kim, Yi-Yeoun; Hetherington, Nicola B J; Noel, Elizabeth H; Kröger, Roland; Charnock, John M; Christenson, Hugo K; Meldrum, Fiona C

    2011-12-23

    Single-crystal calcite nanowires are formed by crystallization of morphologically equivalent amorphous calcium carbonate (ACC) particles within the pores of track etch membranes. The polyaspartic acid stabilized ACC is drawn into the membrane pores by capillary action, and the single-crystal nature of the nanowires is attributed to the limited contact of the intramembrane ACC particle with the bulk solution. The reaction environment then supports transformation to a single-crystal product. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Application of Recognition Tunneling in Single Molecule Identification

    Science.gov (United States)

    Zhao, Yanan

    Single molecule identification is one essential application area of nanotechnology. The application areas including DNA sequencing, peptide sequencing, early disease detection and other industrial applications such as quantitative and quantitative analysis of impurities, etc. The recognition tunneling technique we have developed shows that after functionalization of the probe and substrate of a conventional Scanning Tunneling Microscope with recognition molecules ("tethered molecule-pair" configuration), analyte molecules trapped in the gap that is formed by probe and substrate will bond with the reagent molecules. The stochastic bond formation/breakage fluctuations give insight into the nature of the intermolecular bonding at a single molecule-pair level. The distinct time domain and frequency domain features of tunneling signals were extracted from raw signals of analytes such as amino acids and their enantiomers. The Support Vector Machine (a machine-learning method) was used to do classification and predication based on the signal features generated by analytes, giving over 90% accuracy of separation of up to seven analytes. This opens up a new interface between chemistry and electronics with immediate implications for rapid Peptide/DNA sequencing and molecule identification at single molecule level.

  2. Optical properties of single semiconductor nanowires and nanowire ensembles. Probing surface physics by photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Pfueller, Carsten

    2011-06-27

    This thesis presents a detailed investigation of the optical properties of semiconductor nanowires (NWs) in general and single GaN NWs and GaN NW ensembles in particular by photoluminescence (PL) spectroscopy. NWs are often considered as potential building blocks for future nanometer-scaled devices. This vision is based on several attractive features that are generally ascribed to NWs. For instance, they are expected to grow virtually free of strain and defects even on substrates with a large structural mismatch. In the first part of the thesis, some of these expectations are examined using semiconductor NWs of different materials. On the basis of the temperature-dependent PL of Au- and selfassisted GaAs/(Al,Ga)As core-shell NWs, the influence of foreign catalyst particles on the optical properties of NWs is investigated. For the Au-assisted NWs, we find a thermally activated, nonradiative recombination channel, possibly related to Auatoms incorporated from the catalyst. These results indicate the limited suitability of catalyst-assisted NWs for optoelectronic applications. The effect of the substrate choice is studied by comparing the PL of ZnO NWs grown on Si, Al{sub 2}O{sub 3}, and ZnO substrates. Their virtually identical optical characteristics indicate that the synthesis of NWs may indeed overcome the constraints that limit the heteroepitaxial deposition of thin films. The major part of this thesis discusses the optical properties of GaN NWs grown on Si substrates. The investigation of the PL of single GaN NWs and GaN NW ensembles reveals the significance of their large surface-to-volume ratio. Differences in the recombination behavior of GaNNW ensembles and GaN layers are observed. First, the large surface-to-volume ratio is discussed to be responsible for the different recombination mechanisms apparent in NWs. Second, certain optical features are only found in the PL of GaN NWs, but not in that of GaN layers. An unexpected broadening of the donor

  3. Linearly Polarized, Single-Mode Spontaneous Emission in a Photonic Nanowire

    DEFF Research Database (Denmark)

    Munsch, Mathieu; Claudon, Julien; Bleuse, Joël

    2012-01-01

    We introduce dielectric elliptical photonic nanowires to funnel efficiently the spontaneous emission of an embedded emitter into a single optical mode. Inside a wire with a moderate lateral aspect ratio, the electromagnetic environment is largely dominated by a single guided mode, with a linear...

  4. Controlled Coupling of a Single Nitrogen-Vacancy Center to a Silver Nanowire

    DEFF Research Database (Denmark)

    Huck, Alexander; Kumar, Shailesh; Shakoor, Abdul

    2011-01-01

    We report on the controlled coupling of a single nitrogen-vacancy (NV) center to a surface plasmon mode propagating along a chemically grown silver nanowire (NW). We locate and optically characterize a single NV center in a uniform dielectric environment before we controllably position this emitter...

  5. Bipolar Photothermoelectric Effect Across Energy Filters in Single Nanowires.

    Science.gov (United States)

    Limpert, Steven; Burke, Adam; Chen, I-Ju; Anttu, Nicklas; Lehmann, Sebastian; Fahlvik, Sofia; Bremner, Stephen; Conibeer, Gavin; Thelander, Claes; Pistol, Mats-Erik; Linke, Heiner

    2017-07-12

    The photothermoelectric (PTE) effect uses nonuniform absorption of light to produce a voltage via the Seebeck effect and is of interest for optical sensing and solar-to-electric energy conversion. However, the utility of PTE devices reported to date has been limited by the need to use a tightly focused laser spot to achieve the required, nonuniform illumination and by their dependence upon the Seebeck coefficients of the constituent materials, which exhibit limited tunability and, generally, low values. Here, we use InAs/InP heterostructure nanowires to overcome these limitations: first, we use naturally occurring absorption "hot spots" at wave mode maxima within the nanowire to achieve sharp boundaries between heated and unheated subwavelength regions of high and low absorption, allowing us to use global illumination; second, we employ carrier energy-filtering heterostructures to achieve a high Seebeck coefficient that is tunable by heterostructure design. Using these methods, we demonstrate PTE voltages of hundreds of millivolts at room temperature from a globally illuminated nanowire device. Furthermore, we find PTE currents and voltages that change polarity as a function of the wavelength of illumination due to spatial shifting of subwavelength absorption hot spots. These results indicate the feasibility of designing new types of PTE-based photodetectors, photothermoelectrics, and hot-carrier solar cells using nanowires.

  6. Solvothermal growth of single-crystal CdS nanowires

    Indian Academy of Sciences (India)

    Cadmium sulfide (CdS) nanowires (NWs) were prepared by the solvothermal method using ethylenedi- amine as a solvent. Two sets of ... discovery of new physical and chemical properties (Wang et al 2011). One-dimensional ... mal synthesis is widely used to prepare semiconductor NWs, particularly CdS. This synthesis ...

  7. Low-temperature phonoemissive tunneling rates in single molecule magnets

    Science.gov (United States)

    Liu, Yun; Garg, Anupam

    2016-03-01

    Tunneling between the two lowest energy levels of single molecule magnets with Ising type anisotropy, accompanied by the emission or absorption of phonons, is considered. Quantitatively accurate calculations of the rates for such tunneling are performed for a model Hamiltonian especially relevant to the best studied example, Fe8. Two different methods are used: high-order perturbation theory in the spin-phonon interaction and the non-Ising-symmetric parts of the spin Hamiltonian, and a novel semiclassical approach based on spin-coherent-state-path-integral instantons. The methods are found to be in good quantitative agreement with other, and consistent with previous approaches to the problem. The implications of these results for magnetization of molecular solids of these molecules are discussed briefly.

  8. Fabrication and characterization of single segment CoNiP and multisegment CoNiP/Au nanowires

    International Nuclear Information System (INIS)

    Luu Van Thiem; Le Tuan Tu

    2014-01-01

    This paper presents the fabrication of CoNiP single segment and CoNiP/Au multisegment nanowires. We have fabricated these nanowires by electrodeposition method into polycarbonate templates with a nominal pore diameter about 100 nm. The hysteresis loops were measured with the applied magnetic field parallel and perpendicular to the wire axis using a vibrating sample magnetometer (VSM). The structure morphology was observed by Scanning Electron Microscopy (SEM) and the element composition of CoNiP/Au multisegment nanowires were analyzed by EDS. The results show that nanowires are very uniform with the diameter of 100 nm. The observed coercivity (H C ) and squareness (Mr/Ms) of CoNiP single segment nanowires are larger than the CoNiP/Au multisegment nanowires. (author)

  9. Optical properties of heavily doped GaAs nanowires and electroluminescent nanowire structures.

    Science.gov (United States)

    Lysov, A; Offer, M; Gutsche, C; Regolin, I; Topaloglu, S; Geller, M; Prost, W; Tegude, F-J

    2011-02-25

    We present GaAs electroluminescent nanowire structures fabricated by metal organic vapor phase epitaxy. Electroluminescent structures were realized in both axial pn-junctions in single GaAs nanowires and free-standing nanowire arrays with a pn-junction formed between nanowires and substrate, respectively. The electroluminescence emission peak from single nanowire pn-junctions at 10 K was registered at an energy of around 1.32 eV and shifted to 1.4 eV with an increasing current. The line is attributed to the recombination in the compensated region present in the nanowire due to the memory effect of the vapor-liquid-solid growth mechanism. Arrayed nanowire electroluminescent structures with a pn-junction formed between nanowires and substrate demonstrated at 5 K a strong electroluminescence peak at 1.488 eV and two shoulder peaks at 1.455 and 1.519 eV. The main emission line was attributed to the recombination in the p-doped GaAs. The other two lines correspond to the tunneling-assisted photon emission and band-edge recombination in the abrupt junction, respectively. Electroluminescence spectra are compared with the micro-photoluminescence spectra taken along the single p-, n- and single nanowire pn-junctions to find the origin of the electroluminescence peaks, the distribution of doping species and the sharpness of the junctions.

  10. Alternating-Current InGaN/GaN Tunnel Junction Nanowire White-Light Emitting Diodes.

    Science.gov (United States)

    Sadaf, S M; Ra, Y-H; Nguyen, H P T; Djavid, M; Mi, Z

    2015-10-14

    The current LED lighting technology relies on the use of a driver to convert alternating current (AC) to low-voltage direct current (DC) power, a resistive p-GaN contact layer to inject positive charge carriers (holes) for blue light emission, and rare-earth doped phosphors to down-convert blue photons into green/red light, which have been identified as some of the major factors limiting the device efficiency, light quality, and cost. Here, we show that multiple-active region phosphor-free InGaN nanowire white LEDs connected through a polarization engineered tunnel junction can fundamentally address the afore-described challenges. Such a p-GaN contact-free LED offers the benefit of carrier regeneration, leading to enhanced light intensity and reduced efficiency droop. Moreover, through the monolithic integration of p-GaN up and p-GaN down nanowire LED structures on the same substrate, we have demonstrated, for the first time, AC operated LEDs on a Si platform, which can operate efficiently in both polarities (positive and negative) of applied voltage.

  11. Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk

    OpenAIRE

    Carrillo-Nuñez Hamilton; Luisier Mathieu; Schenk Andreas

    2015-01-01

    Abstract Extremely narrow and bulk like p type InAs–Si nanowire \\{TFETs\\} are studied using (i) a full band and atomistic quantum transport simulator based on the sp 3 d 5 s * tight binding model and (ii) a drift–diffusion \\{TCAD\\} tool. As (iii) option a two band model and the \\{WKB\\} approximation have been adapted to work in heterostructures through a careful choice of the imaginary dispersion. It is found that for ultra scaled InAs–Si nanowire TFETs the \\{WKB\\} approximation and the quant...

  12. Single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure transistors.

    Science.gov (United States)

    Tang, Jianshi; Wang, Chiu-Yen; Xiu, Faxian; Hong, Augustin J; Chen, Shengyu; Wang, Minsheng; Zeng, Caifu; Yang, Hong-Jie; Tuan, Hsing-Yu; Tsai, Cho-Jen; Chen, Lih Juann; Wang, Kang L

    2010-12-17

    In this study, we report on the formation of a single-crystalline Ni(2)Ge/Ge/Ni(2)Ge nanowire heterostructure and its field effect characteristics by controlled reaction between a supercritical fluid-liquid-solid (SFLS) synthesized Ge nanowire and Ni metal contacts. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) studies reveal a wide temperature range to convert the Ge nanowire to single-crystalline Ni(2)Ge by a thermal diffusion process. The maximum current density of the fully germanide Ni(2)Ge nanowires exceeds 3.5 × 10(7) A cm(-2), and the resistivity is about 88 μΩ cm. The in situ reaction examined by TEM shows atomically sharp interfaces for the Ni(2)Ge/Ge/Ni(2)Ge heterostructure. The interface epitaxial relationships are determined to be [Formula: see text] and [Formula: see text]. Back-gate field effect transistors (FETs) were also fabricated using this low resistivity Ni(2)Ge as source/drain contacts. Electrical measurements show a good p-type FET behavior with an on/off ratio over 10(3) and a one order of magnitude improvement in hole mobility from that of SFLS-synthesized Ge nanowire.

  13. Spin-controlled nanomechanics induced by single-electron tunneling.

    Science.gov (United States)

    Radić, D; Nordenfelt, A; Kadigrobov, A M; Shekhter, R I; Jonson, M; Gorelik, L Y

    2011-12-02

    We consider dc-electronic transport through a nanowire suspended between normal- and spin-polarized metal leads in the presence of an external magnetic field. We show that magnetomotive coupling between the electrical current through the nanowire and vibrations of the wire may result in self-excitation of mechanical vibrations. The self-excitation mechanism is based on correlations between the occupancy of the quantized electronic energy levels inside the nanowire and the velocity of the nanowire. We derive conditions for the occurrence of the instability and find stable regimes of mechanical oscillations. © 2011 American Physical Society

  14. Chiral transformation: From single nanowire to double helix

    KAUST Repository

    Wang, Yong

    2011-12-21

    We report a new type of water-soluble ultrathin Au-Ag alloy nanowire (NW), which exhibits unprecedented behavior in a colloidal solution. Upon growth of a thin metal (Pd, Pt, or Au) layer, the NW winds around itself to give a metallic double helix. We propose that the winding originates from the chirality within the as-synthesized Au-Ag NWs, which were induced to untwist upon metal deposition. © 2011 American Chemical Society.

  15. Tunneling anisotropic magnetoresistance in single-molecule magnet junctions

    Science.gov (United States)

    Xie, Haiqing; Wang, Qiang; Jiao, Hujun; Liang, J.-Q.

    2012-08-01

    We theoretically investigate quantum transport through single-molecule magnet (SMM) junctions with ferromagnetic and normal-metal leads in the sequential regime. The current obtained by means of the rate-equation gives rise to the tunneling anisotropic magnetoresistance (TAMR), which varies with the angle between the magnetization direction of ferromagnetic lead and the easy axis of SMM. The angular dependence of TAMR can serve as a probe to determine experimentally the easy axis of SMM. Moreover, it is demonstrated that both the magnitude and the sign of TAMR are tunable by the bias voltage, suggesting a new spin-valve device with only one magnetic electrode in molecular spintronics.

  16. Low-frequency noise in single electron tunneling transistor

    DEFF Research Database (Denmark)

    Tavkhelidze, A.N.; Mygind, Jesper

    1998-01-01

    The noise in current biased aluminium single electron tunneling (SET) transistors has been investigated in the frequency range of 5 mHz shielding including resistive coaxial lines, that prevents spurious electromagnetic radiation and especially high energy......, we find the same input charge noise, typically QN = 5 × 10–4 e/Hz1/2 at 10 Hz, with and without the HF shielding. At lower frequencies, the noise is due to charge trapping, and the voltage noise pattern superimposed on the V(Vg) curve (voltage across transistor versus gate voltage) strongly depends...

  17. Controlling light emission from single-photon sources using photonic nanowires

    DEFF Research Database (Denmark)

    Gregersen, Niels; Chen, Yuntian; Mørk, Jesper

    2012-01-01

    The photonic nanowire has recently emerged as an promising alternative to microcavity-based single-photon source designs. In this simple structure, a geometrical effect ensures a strong coupling between an embedded emitter and the optical mode of interest and a combination of tapers and mirrors a...... designs allowing for electrical contacting, polarization control, improved efficiency and simplified fabrication....

  18. Stress induced growth of Sn nanowires in a single step by sputtering method

    Science.gov (United States)

    Yadav, A.; Patel, N.; Miotello, A.; Kothari, D. C.

    2015-06-01

    Sn nanowires in aluminum film have been synthesized in a single step by co-sputtering of Al and Sn targets. Due to immiscibility of Sn and Al, co-sputtering leads to generation of stress in the composite film. In order to attain thermodynamic equilibrium, Sn separates from Al and diffuses towards the grain boundaries. External perturbation due to ambient atmosphere leads to corrosion at the grain boundaries forming pits which provide path for Sn to evolve. Owing to this, extrusion of Sn nanowires from Al film occurs to release the residual stress in the film.

  19. Flexible semi-around gate silicon nanowire tunnel transistors with a sub-kT/q switch

    Science.gov (United States)

    Lee, Myeongwon; Jeon, Youngin; Kim, Minsuk; Kim, Sangsig

    2015-06-01

    Tunnel field-effect transistors (TFETs) with a subthreshold swing (SS) tunneling. In silicon (Si) channel materials, however, it still remains a challenge to obtain SS smaller than 60 mV/dec. In this study, we experimentally demonstrate the sub-60 mV/dec operation of a flexible semi-around gate TFET on a plastic substrate using Si nanowires (SiNWs) as the channel material. With the combined advantages of selectively thinned SiNW channels (width ˜ 15 nm and height ˜ 40 nm) and high-κ (Al2O3 ˜ 7 nm) gate dielectric, in conjunction with an abrupt degenerate source junction, the device with a channel length of ˜500 nm exhibits a minimal SS of ˜42 mV/dec at room temperature. Moreover, mechanical bendability of the device indicates that it has stable and good fatigue properties, providing an important step towards the realization of steep-slope switches for low-power and energy-efficient flexible electronics.

  20. Photovoltaic device on a single ZnO nanowire p–n homojunction

    International Nuclear Information System (INIS)

    Cho, Hak Dong; Zakirov, Anvar S; Yuldashev, Shavkat U; Kang, Tae Won; Ahn, Chi Won; Yeo, Yung Kee

    2012-01-01

    A photovoltaic device was successfully grown solely based on the single ZnO p–n homojunction nanowire. The ZnO nanowire p–n diode consists of an as-grown n-type segment and an in situ arsenic-doped p-type segment. This p–n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased conditions. Our results demonstrate that the present ZnO p–n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nanoscale electronic, optoelectronic and medical devices. (paper)

  1. Homojunction p-n photodiodes based on As-doped single ZnO nanowire

    International Nuclear Information System (INIS)

    Cho, H. D.; Zakirov, A. S.; Yuldashev, Sh. U.; Kang, T. W.; Ahn, C. W.; Yeo, Y. K.

    2013-01-01

    Photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in-situ arsenic doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased condition. Our results demonstrate that present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nano-scale electronic, optoelectronic, and medical devices

  2. Analysis of InAs-Si heterojunction nanowire tunnel FETs: Extreme confinement vs. bulk

    Science.gov (United States)

    Carrillo-Nuñez, Hamilton; Luisier, Mathieu; Schenk, Andreas

    2015-11-01

    Extremely narrow and bulk-like p-type InAs-Si nanowire TFETs are studied using (i) a full-band and atomistic quantum transport simulator based on the sp3d5s∗ tight-binding model and (ii) a drift-diffusion TCAD tool. As (iii) option, a two-band model and the WKB approximation have been adapted to work in heterostructures through a careful choice of the imaginary dispersion. It is found that for ultra-scaled InAs-Si nanowire TFETs, the WKB approximation and the quantum transport results agree very well, suggesting that the former could be applied to larger hetero-TFET structures and considerably reduce the simulation time while keeping a high accuracy.

  3. Diagnostics and Degradation Investigations of Li-Ion Battery Electrodes using Single Nanowire Electrochemical Cells

    Science.gov (United States)

    Palapati, Naveen Kumar Reddy

    Portable energy storage devices, which drive advanced technological devices, are improving the productivity and quality of our everyday lives. In order to meet the growing needs for energy storage in transportation applications, the current lithium-ion (Li-ion) battery technology requires new electrode materials with performance improvements in multiple aspects: (1) energy and power densities, (2) safety, and (3) performance lifetime. While a number of interesting nanomaterials have been synthesized in recent years with promising performance, accurate capabilities to probe the intrinsic performance of these high-performance materials within a battery environment are lacking. Most studies on electrode nanomaterials have so far used traditional, bulk-scale techniques such as cyclic voltammetry, electrochemical impedance spectroscopy, and Raman spectroscopy. These approaches give an ensemble-average estimation of the electrochemical properties of a battery electrode and does not provide a true indication of the performance that is intrinsic to its material system. Thus, new techniques are essential to understand the changes happening at a single particle level during the operation of a battery. The results from this thesis solve this need and study the electrical, mechanical and size changes that take place in a battery electrode at a single particle level. Single nanowire lithium cells are built by depositing nanowires in carefully designed device regions of a silicon chip using Dielectrophoresis (DEP). This work has demonstrated the assembly of several NW cathode materials like LiFePO 4, pristine and acid-leached alpha-MnO2, todorokite - MnO2, acid and nonacid-leached Na0.44MnO2. Within these materials, alpha-MnO2 was chosen as the model material system for electrochemical experiments. Electrochemical lithiation of pristine alpha-MnO 2 was performed inside a glove box. The volume, elasticity and conductivity changes were measured at each state-of-charge (SOC) to

  4. Monolithic carbon structures including suspended single nanowires and nanomeshes as a sensor platform.

    Science.gov (United States)

    Lim, Yeongjin; Heo, Jeong-Il; Madou, Marc; Shin, Heungjoo

    2013-11-20

    With the development of nanomaterial-based nanodevices, it became inevitable to develop cost-effective and simple nanofabrication technologies enabling the formation of nanomaterial assembly in a controllable manner. Herein, we present suspended monolithic carbon single nanowires and nanomeshes bridging two bulk carbon posts, fabricated in a designed manner using two successive UV exposure steps and a single pyrolysis step. The pyrolysis step is accompanied with a significant volume reduction, resulting in the shrinkage of micro-sized photoresist structures into nanoscale carbon structures. Even with the significant elongation of the suspended carbon nanowire induced by the volume reduction of the bulk carbon posts, the resultant tensional stress along the nanowire is not significant but grows along the wire thickness; this tensional stress gradient and the bent supports of the bridge-like carbon nanowire enhance structural robustness and alleviate the stiction problem that suspended nanostructures frequently experience. The feasibility of the suspended carbon nanostructures as a sensor platform was demonstrated by testing its electrochemical behavior, conductivity-temperature relationship, and hydrogen gas sensing capability.

  5. Experimental Observation of Quantum Confinement Effect in and Silicon Nanowire Field-Effect Transistors and Single-Electron/Hole Transistors Operating at Room Temperature

    Science.gov (United States)

    Suzuki, Ryota; Nozue, Motoki; Saraya, Takuya; Hiramoto, Toshiro

    2013-10-01

    The quantum confinement effect (QCE) in ultranarrow silicon nanowire channel field-effect transistors (FETs) as well as single-electron/hole transistors (SET/SHTs) operating at room temperature is intensively investigated for the optimization of device design and fabrication. By adopting a “shared channel” structure with the directions of and , a carrier-dependent QCE is systematically examined. It is found that nanowire pFETs exhibit a smaller threshold voltage (Vth) variability due to a weaker QCE, while nFETs and n/pFETs show comparable Vth variabilities coming from the QCE. It is also found that only SETs exhibit clear Coulomb oscillations in the case of the channel, suggesting the formation of higher tunnel barriers than SHTs. On the other hand, SHTs show undesirable multidot behavior in spite of their comparable QCEs for electrons and holes. It is concluded that -directed nanowire channel SETs and n/pFETs are suitable for the integration of CMOS and SETs.

  6. Fluctuation mechanisms in superconductors nanowire single-photon counters, enabled by effective top-down manufacturing

    CERN Document Server

    Bartolf, Holger

    2016-01-01

    Holger Bartolf discusses state-of-the-art detection concepts based on superconducting nanotechnology as well as sophisticated analytical formulæ that model dissipative fluctuation-phenomena in superconducting nanowire single-photon detectors. Such knowledge is desirable for the development of advanced devices which are designed to possess an intrinsic robustness against vortex-fluctuations and it provides the perspective for honorable fundamental science in condensed matter physics. Especially the nanowire detector allows for ultra-low noise detection of signals with single-photon sensitivity and GHz repetition rates. Such devices have a huge potential for future technological impact and might enable unique applications (e.g. high rate interplanetary deep-space data links from Mars to Earth). Contents Superconducting Single-Photon Detectors Nanotechnological Manufacturing; Scale: 10 Nanometer Berezinskii-Kosterlitz Thouless (BKT) Transition, Edge-Barrier, Phase Slips Target Groups Researchers and students of...

  7. Controlling the Coupling of a Single Nitrogen Vacancy Center to a Silver Nanowire

    DEFF Research Database (Denmark)

    Huck, Alexander; Kumar, Shailesh; Shakoor, Abdul

    2011-01-01

    Dipole emitters are expected to efficiently couple to the plasmonic mode propagating along a cylindrically shaped metallic nano-structure. Such a strongly coupled system could serve as a fundamental building block for a single photon source on demand and a device enabling strong non-linear intera......Dipole emitters are expected to efficiently couple to the plasmonic mode propagating along a cylindrically shaped metallic nano-structure. Such a strongly coupled system could serve as a fundamental building block for a single photon source on demand and a device enabling strong non......-linear interaction at the level of a few photons. In our contribution we demonstrate the controlled coupling of a single nitrogen vacancy (NV) center in a diamond nano crystal to a nanowire made of silver. This is in contrast to previous realizations, where the nanowire dipole system was assembled randomly. Ultimate...

  8. Quantum Tunneling of Magnetization in Trigonal Single-Molecule Magnets

    Science.gov (United States)

    Liu, Junjie; Del Barco, Enrique; Hill, Stephen

    2012-02-01

    We perform a numerical analysis of the quantum tunneling of magnetization (QTM) that occurs in a spin S = 6 single-molecule magnet (SMM) with idealized C3 symmetry. The deconstructive points in the QTM are located by following the Berry-phase interference (BPI) oscillations. We find that the O4^3 (=12[Sz,S+^3 +S-^3 ]) operator unfreezes odd-k QTM resonances and generates three-fold patterns of BPI minima in all resonances, including k = 0! This behavior cannot be reproduced with operators that possess even rotational symmetry about the quantization axis. We find also that the k = 0 BPI minima shift away from zero longitudinal field. The wider implications of these results will be discussed in terms of the QTM behavior observed in other SMMs.

  9. Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

    Energy Technology Data Exchange (ETDEWEB)

    Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro [University of California, Santa Cruz (United States). Baskin School of Engineering; NASA Ames Research Center, Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz, Moffett Field, CA (United States); Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S. [Hewlett-Packard Laboratories, Information and Quantum Systems Laboratory, Palo Alto, CA (United States); Logeeswaran, V.J.; Islam, M.S. [University of California Davis, Electrical and Computer Engineering, Davis, CA (United States)

    2009-06-15

    A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)

  10. A highly sensitive, label-free gene sensor based on a single conducting polymer nanowire.

    Science.gov (United States)

    Kannan, Bhuvaneswari; Williams, David E; Laslau, Cosmin; Travas-Sejdic, Jadranka

    2012-05-15

    A prerequisite for exploiting sensing devices based on semiconductor nanowires is ultra-sensitive and selective direct electrical detection of biological and chemical species. Here, we constructed a transducer based on copolymer of poly(3,4,-ethylenedioxythiophene) (PEDOT) and carboxylic group functionalised PEDOT single nanowire in between gold electrodes, followed by covalent attachment of amino-modified probe oligonucleotide. The target ODNs specific to Homo sapiens Breast and ovarian cancer cells were detected at femtomolar concentration and incorporation of negative controls (non-complementary ODN) were clearly discriminated by the sensor. The ex situ measurements were performed by using two terminal device setup and the changes in the interface of the nanowire associated with the association or dissociation of ODNs were measured as change in resistance. In addition, in situ measurements were performed by utilizing scanning ion conductance microscopy to measure the change in resistance of probe modified nanowire upon addition of different concentration of target ODNs in presence of relevant buffer. The constructed, nano sensor showed highly sensitive concentration dependent resistance change. Copyright © 2012 Elsevier B.V. All rights reserved.

  11. Control of single photon emitters in semiconductor nanowires by surface acoustic waves

    Science.gov (United States)

    Lazić, S.; Hernández-Mínguez, A.; Santos, P. V.

    2017-08-01

    We report on an experimental study into the effects of surface acoustic waves on the optical emission of dot-in-a-nanowire heterostructures in III-V material systems. Under direct optical excitation, the excitonic energy levels in III-nitride dot-in-a-nanowire heterostructures oscillate at the acoustic frequency, producing a characteristic splitting of the emission lines in the time-integrated photoluminescence spectra. This acoustically induced periodic tuning of the excitonic transition energies is combined with spectral detection filtering and employed as a tool to regulate the temporal output of anti-bunched photons emitted from these nanowire quantum dots. In addition, the acoustic transport of electrons and holes along a III-arsenide nanowire injects the electric charges into an ensemble of quantum dot-like recombination centers that are spatially separated from the optical excitation area. The acoustic population and depopulation mechanism determines the number of carrier recombination events taking place simultaneously in the ensemble, thus allowing control of the anti-bunching degree of the emitted photons. The results presented are relevant for the dynamic control of single photon emission in III-V semiconductor heterostructures.

  12. Fast-Response Single-Nanowire Photodetector Based on ZnO/WS2 Core/Shell Heterostructures.

    Science.gov (United States)

    Butanovs, Edgars; Vlassov, Sergei; Kuzmin, Alexei; Piskunov, Sergei; Butikova, Jelena; Polyakov, Boris

    2018-04-12

    The surface plays an exceptionally important role in nanoscale materials, exerting a strong influence on their properties. Consequently, even a very thin coating can greatly improve the optoelectronic properties of nanostructures by modifying the light absorption and spatial distribution of charge carriers. To use these advantages, 1D/1D heterostructures of ZnO/WS 2 core/shell nanowires with a-few-layers-thick WS 2 shell were fabricated. These heterostructures were thoroughly characterized by scanning and transmission electron microscopy, X-ray diffraction, and Raman spectroscopy. Then, a single-nanowire photoresistive device was assembled by mechanically positioning ZnO/WS 2 core/shell nanowires onto gold electrodes inside a scanning electron microscope. The results show that a few layers of WS 2 significantly enhance the photosensitivity in the short wavelength range and drastically (almost 2 orders of magnitude) improve the photoresponse time of pure ZnO nanowires. The fast response time of ZnO/WS 2 core/shell nanowire was explained by electrons and holes sinking from ZnO nanowire into WS 2 shell, which serves as a charge carrier channel in the ZnO/WS 2 heterostructure. First-principles calculations suggest that the interface layer i-WS 2 , bridging ZnO nanowire surface and WS 2 shell, might play a role of energy barrier, preventing the backward diffusion of charge carriers into ZnO nanowire.

  13. Fabrication and electrical characterization of homo- and hetero-structure Si/SiGe nanowire Tunnel Field Effect Transistor grown by vapor-liquid-solid mechanism

    Science.gov (United States)

    Brouzet, V.; Salem, B.; Periwal, P.; Alcotte, R.; Chouchane, F.; Bassani, F.; Baron, T.; Ghibaudo, G.

    2016-04-01

    We demonstrate the fabrication and electrical characterization of Ω -gate Tunnel Field Effect Transistors (TFET) based on p-Si/i-Si/n+Si0.7Ge0.3 heterostructure nanowires grown by Chemical Vapor Deposition (CVD) using the vapor-liquid-solid (VLS) mechanism. The electrical performances of the p-Si/i-Si/n+Si0.7Ge0.3 heterostructure TFET device are presented and compared to Si and Si0.7Ge0.3 homostructure nanowire TFETs. We observe an improvement of the electrical performances of TFET with p-Si/i-Si/n+Si0.7Ge0.3 heterostructure nanowire (HT NW). The optimized devices present an Ion current of about 245 nA at VDS = -0.5 V and VGS = -3 V with a subthreshold swing around 135 mV/dec. Finally, we show that the electrical results are in good agreement with numerical simulation using Kane's Band-to-Band Tunneling model.

  14. Antibacterial activity of single crystalline silver-doped anatase TiO{sub 2} nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xiangyu, E-mail: zhangxiangyu@tyut.edu.cn; Li, Meng; He, Xiaojing; Hang, Ruiqiang; Huang, Xiaobo; Wang, Yueyue; Yao, Xiaohong; Tang, Bin, E-mail: tangbin@tyut.edu.cn

    2016-05-30

    Graphical abstract: The silver-doped TiO{sub 2} nanowire arrays on titanium foil substrate were synthesized via a two-step process. It includes: deposition of AgTi films on titanium foil by magnetron sputtering; preparation of AgNW arrays on AgTi films via alkali (NaOH) hydrothermal treatment and ion-exchange with HCl, followed by calcinations. - Highlights: • Ag-doped TiO{sub 2} nanowire arrays have been prepared by a duplex-treatment. • The duplex-treatment consisted of magnetron sputtering and hydrothermal growth. • Ag-doped nanowire arrays show excellent antibacterial activity against E. coli. - Abstract: Well-ordered, one-dimensional silver-doped anatase TiO{sub 2} nanowire (AgNW) arrays have been prepared through a hydrothermal growth process on the sputtering-deposited AgTi layers. Electron microscope analyses reveal that the as-synthesized AgNW arrays exhibit a single crystalline phase with highly uniform morphologies, diameters ranging from 85 to 95 nm, and lengths of about 11 μm. Silver is found to be doped into TiO{sub 2} nanowire evenly and mainly exists in the zerovalent state. The AgNW arrays show excellent efficient antibacterial activity against Escherichia coli (E. coli), and all of the bacteria can be killed within 1 h. Additionally, the AgNW arrays can still kill E. coli after immersion for 60 days, suggesting the long-term antibacterial property. The technique reported here is environmental friendly for formation of silver-containing nanostructure without using any toxic organic solvents.

  15. Comprehensive analyses of core-shell InGaN/GaN single nanowire photodiodes

    Science.gov (United States)

    Zhang, H.; Guan, N.; Piazza, V.; Kapoor, A.; Bougerol, C.; Julien, F. H.; Babichev, A. V.; Cavassilas, N.; Bescond, M.; Michelini, F.; Foldyna, M.; Gautier, E.; Durand, C.; Eymery, J.; Tchernycheva, M.

    2017-12-01

    Single nitride nanowire core/shell n-p photodetectors are fabricated and analyzed. Nanowires consisting of an n-doped GaN stem, a radial InGaN/GaN multiple quantum well system and a p-doped GaN external shell were grown by catalyst-free metal-organic vapour phase epitaxy on sapphire substrates. Single nanowires were dispersed and the core and the shell regions were contacted with a metal and an ITO deposition, respectively, defined using electron beam lithography. The single wire photodiodes present a response in the visible to UV spectral range under zero external bias. The detector operation speed has been analyzed under different bias conditions. Under zero bias, the  -3 dB cut-off frequency is ~200 Hz for small light modulations. The current generation was modeled using non-equilibrium Green function formalism, which evidenced the importance of phonon scattering for carrier extraction from the quantum wells.

  16. Non-degenerate pump-probe spectroscopy of single GaN nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Upadhya, Prashanth C [Los Alamos National Laboratory; Taylor, Antoinette J [Los Alamos National Laboratory; Prasankumar, Rohiy P [Los Alamos National Laboratory; Wang, George T [SNL; Martinez, Julio A [SNL; Li, Qiming [SNL; Swartzentruber, Brian S [SNL

    2010-01-01

    Spatially-resolved ultrafast transient absorption measurements on a single GaN nanowire give insight into carrier relaxation dynamics as a function of the probe polarization and position on the nanowire on a femtosecond timescale. The synthesis and optical characterization of semiconductor nanowires (NWs) has gained considerable attention in recent years owing to their unique electronic and optical properties that arise from their anisotropic geometry, large surface to volume ratio and two-dimensional quasiparticle confinement, Post-growth characterization of their properties is crucial in understanding the fundamental physical processes that can lead to enhanced functionality of NW-based devices, In particular, it is important to understand the carrier relaxation pathways in individual NWs, since the geometry of these nanostructures can significantly influence carrier recombination and/or trapping. In this respect, ultrafast optical techniques offer reliable and non-contact spectroscopic tools to study carrier dynamics in semiconductor nanostructures. In summary, time-resolved optical pump-probe spectroscopy was performed on single GaN NWs. These measurements give insight into the different processes that govern carrier capture, particularly at surface states, and relaxation in individual nanostructures. Our experiments thus demonstrate the value of single-particle ultrafast optical spectroscopy in understanding the physical processes that govern the properties of semiconductor NWs, while suggesting approaches to optimize NW-based devices for nanophotonic applications.

  17. Strained Silicon and Silicon-GermaniumNanowire Tunnel FETs and Inverters

    OpenAIRE

    Richter, Simon

    2014-01-01

    Reducing power consumption is an important issue for integrated circuits in portable devicesrelying on batteries and systems without external power supply. Scaling of the supply voltageVDD in integrated circuits is a powerful tool for reducing the power consumption, due to thequadratic dependence on VDD. MOSFETs, however, exhibit a fundamental limitation forthe drain current increase per applied gate voltage difference. The tunnel field-effect transistor(TFET) provides the ability for beating...

  18. Rectification of radio frequency current in ferromagnetic nanowire

    OpenAIRE

    Yamaguchi, A.; Miyajima, H.; Ono, T.; Suzuki, Y.; Yuasa, S.; Tulapurkar, A.; Nakatani, Y.

    2006-01-01

    We report the rectification of a constant wave radio frequency (RF) current by using a single-layer magnetic nanowire; a direct-current voltage is resonantly generated when the RF current flows through the nanowire. The mechanism of the rectification is discussed in terms of the spin torque diode effect reported for magnetic tunnel junction devices and the rectification is shown to be direct attributable to resonant spin wave excitation by the RF current.

  19. Nano-optical observation of cascade switching in a parallel superconducting nanowire single photon detector

    International Nuclear Information System (INIS)

    Heath, Robert M.; Tanner, Michael G.; Casaburi, Alessandro; Hadfield, Robert H.; Webster, Mark G.; San Emeterio Alvarez, Lara; Jiang, Weitao; Barber, Zoe H.; Warburton, Richard J.

    2014-01-01

    The device physics of parallel-wire superconducting nanowire single photon detectors is based on a cascade process. Using nano-optical techniques and a parallel wire device with spatially separate pixels, we explicitly demonstrate the single- and multi-photon triggering regimes. We develop a model for describing efficiency of a detector operating in the arm-trigger regime. We investigate the timing response of the detector when illuminating a single pixel and two pixels. We see a change in the active area of the detector between the two regimes and find the two-pixel trigger regime to have a faster timing response than the one-pixel regime

  20. Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser

    OpenAIRE

    Yan, Xin; Wei, Wei; Tang, Fengling; Wang, Xi; Li, Luying

    2017-01-01

    Near-infrared nanowire lasers are promising as ultrasmall, low-consumption light emitters in on-chip optical communications and computing systems. Here, we report on a room-temperature near-infrared nanolaser based on an AlGaAs/GaAs nanowire/single-quantum-well heterostructure grown by Au-catalyzed metal organic chemical vapor deposition. When subjects to pulsed optical excitation, the nanowire exhibits lasing, with a low threshold of 600 W/cm2, a narrow linewidth of 0.39 nm, and a high Q fac...

  1. Opto-electronics on Single Nanowire Quantum Dots

    OpenAIRE

    Van Kouwen, M.P.

    2010-01-01

    An important goal for nanoscale opto-electronics is the transfer of single electron spin states into single photon polarization states (and vice versa), thereby interfacing quantum transport and quantum optics. Such an interface enables new experiments in the field of quantum information processing. Single and entangled photon-pair generation can be used for quantum cryptography. Furthermore, photons can be used in the readout of a quantum computer based on electron spins. Semiconducting nano...

  2. Quantum Tunneling of Magnetization in Single Molecular Magnets Coupled to Ferromagnetic Reservoirs

    OpenAIRE

    Misiorny, Maciej; Barnas, Józef

    2006-01-01

    The role of spin polarized reservoirs in quantum tunneling of magnetization and relaxation processes in a single molecular magnet (SMM) is investigated theoretically. The SMM is exchange-coupled to the reservoirs and also subjected to a magnetic field varying in time, which enables the quantum tunneling of magnetization (QTM). The spin relaxation times are calculated from the Fermi golden rule. The exchange interaction with tunneling electrons is shown to affect the spin reversal due to QTM. ...

  3. Manifestation of Spin Selection Rules on the Quantum Tunneling of Magnetization in a Single Molecule Magnet

    OpenAIRE

    Henderson, J. J.; Koo, C.; Feng, P. L.; del Barco, E.; Hill, S.; Tupitsyn, I. S.; Stamp, P. C. E.; Hendrickson, D. N.

    2009-01-01

    We present low temperature magnetometry measurements on a new Mn3 single-molecule magnet (SMM) in which the quantum tunneling of magnetization (QTM) displays clear evidence for quantum mechanical selection rules. A QTM resonance appearing only at elevated temperatures demonstrates tunneling between excited states with spin projections differing by a multiple of three: this is dictated by the C3 symmetry of the molecule, which forbids pure tunneling from the lowest metastable state. Resonances...

  4. Analytical calculation of spin tunneling effect in single molecule magnet Fe8 with considering quadrupole excitation

    OpenAIRE

    Y Yousefi; H Fakhari; K Muminov; M R Benam

    2018-01-01

    Spin tunneling effect in Single Molecule Magnet Fe8 is studied by instanton calculation technique using SU(3) generalized spin coherent state in real parameter as a trial function. For this SMM, tunnel splitting arises due to the presence of a Berry like phase in action, which causes interference between tunneling trajectories (instantons). For this SMM, it is established that the use of quadrupole excitation (g dependence) changes not only the location of the quenching points, but also the n...

  5. Organic Nanowires

    DEFF Research Database (Denmark)

    Balzer, Frank; Schiek, Manuela; Al-Shamery, Katharina

    Single crystalline nanowires from fluorescing organic molecules like para-phenylenes or thiophenes are supposed to become key elements in future integrated optoelectronic devices [1]. For a sophisticated design of devices based on nanowires the basic principles of the nanowire formation have...... to be well understood [2]. Nanowires from para-phenylenes, from ®-thiophenes, and from phenylene/thiophene co-oligomers, Fig. 1, are investigated exemplarily. Epitaxy and electrostatic interactions determine the microscopic growth mechanism, whereas kinetics ascertains the macroscopic habit. Results from...

  6. Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact

    Energy Technology Data Exchange (ETDEWEB)

    Babichev, A. V., E-mail: A.Babichev@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Institute (Russian Federation); Zhang, H.; Guan, N. [University Paris Saclay, Institut d’Electronique Fondamentale, UMR 8622 CNRS (France); Egorov, A. Yu. [ITMO University (Russian Federation); Julien, F. H.; Messanvi, A. [University Paris Saclay, Institut d’Electronique Fondamentale, UMR 8622 CNRS (France); Durand, C.; Eymery, J. [University Grenoble Alpes (France); Tchernycheva, M. [University Paris Saclay, Institut d’Electronique Fondamentale, UMR 8622 CNRS (France)

    2016-08-15

    We report the fabrication and optical and electrical characterization of photodetectors for the UV spectral range based on single p–n junction nanowires with a transparent contact of a new type. The contact is based on CVD-grown (chemical-vapor deposition) graphene. The active region of the nitride nanowires contains a set of 30 radial In{sub 0.18}Ga{sub 0.82}N/GaN quantum wells. The structure is grown by metal-organic vaporphase epitaxy. The photodetectors are fabricated using electron-beam lithography. The current–voltage characteristics exhibit a rectifying behavior. The spectral sensitivity of the photodetector is recorded starting from 3 eV and extending far in the UV range. The maximal photoresponse is observed at a wavelength of 367 nm (sensitivity 1.9 mA/W). The response switching time of the photodetector is less than 0.1 s.

  7. Investigation into Photoconductivity in Single CNF/TiO2-Dye Core–Shell Nanowire Devices

    Directory of Open Access Journals (Sweden)

    Rochford Caitlin

    2010-01-01

    Full Text Available Abstract A vertically aligned carbon nanofiber array coated with anatase TiO2 (CNF/TiO2 is an attractive possible replacement for the sintered TiO2 nanoparticle network in the original dye-sensitized solar cell (DSSC design due to the potential for improved charge transport and reduced charge recombination. Although the reported efficiency of 1.1% in these modified DSSC’s is encouraging, the limiting factors must be identified before a higher efficiency can be obtained. This work employs a single nanowire approach to investigate the charge transport in individual CNF/TiO2 core–shell nanowires with adsorbed N719 dye molecules in dark and under illumination. The results shed light on the role of charge traps and dye adsorption on the (photo conductivity of nanocrystalline TiO2 CNF’s as related to dye-sensitized solar cell performance.

  8. Single crystal cupric oxide nanowires: Length- and density-controlled growth and gas-sensing characteristics

    Science.gov (United States)

    Duc, Le Duy; Le, Dang Thi Thanh; Duy, Nguyen Van; Hoa, Nguyen Duc; Hieu, Nguyen Van

    2014-04-01

    Nanowire structured p-type CuO semiconductor is a promising material for gas-sensing applications because of its unique electrical and optical properties. In this study, we demonstrate the length and density controlled synthesis of single crystal CuO nanowires (CuO NWs) by a simple and convenient thermal oxidation of high-purity copper foils in ambient atmosphere. The density and length of the CuO NWs are controlled by varying the oxidation temperature and heating duration to investigate their growth mechanism. As-synthesized materials are characterized by different techniques, such as X-ray diffraction, field emission-scanning electron microscopy, and high-resolution transmission electron microscopy. The gas-sensing characteristics of the CuO NWs are tested using hydrogen and ethanol gases. The results show that the CuO NWs could potentially sense hydrogen and ethanol gases given a working temperature of 400 °C.

  9. Opto-electronics on Single Nanowire Quantum Dots

    NARCIS (Netherlands)

    Van Kouwen, M.P.

    2010-01-01

    An important goal for nanoscale opto-electronics is the transfer of single electron spin states into single photon polarization states (and vice versa), thereby interfacing quantum transport and quantum optics. Such an interface enables new experiments in the field of quantum information processing.

  10. Magnetic Quantum Tunneling and Symmetry in Single Molecule Magnets

    Science.gov (United States)

    Kent, Andrew D.

    2003-03-01

    We have studied the symmetry of magnetic quantum tunneling (MQT) in single molecule magnets (SMMs) using a micro-Hall effect magnetometer and high field vector superconducting magnet system. In the most widely studied SMM, Mn12-acetate, an average crystal 4-fold symmetry in the magnetic response is shown to be due to local molecular environments of 2-fold symmetry that are rotated by 90 degrees with respect to one another. We attribute this to ligand disorder that leads to local rhombic distortions, a model first proposed by Cornia et al. based on x-ray diffraction data [1]. We have magnetically distilled a Mn12-acetate crystal to study a subset of these lower (2-fold) site symmetry molecules and present evidence for a spin-parity effect consistent with a local 2-fold symmetry [2]. These results highlight the importance of subtle changes in molecule environment in modulating magnetic anisotropy and MQT. [1] Cornia et al. Phys. Rev. Lett. 89, 257201 (2002) [2] E. del Barco, A. D. Kent, E. Rumberger, D. H. Hendrickson, G. Christou, submitted for publication (2002) and Europhys. Lett. 60, 768 (2002)

  11. Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

    NARCIS (Netherlands)

    Naber, W.J.M.; Craciun, M.F.; Lemmens, J.H.J.; Arkenbout, A.H.; Palstra, T.T.M.; Morpurgo, A.F.; van der Wiel, Wilfred Gerard

    2010-01-01

    We report on single-crystal rubrene field-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al2O3 tunnel barrier. Magnetic and electronic characterization shows that the Al2O3 film not only protects the Co from undesired oxidation, but also

  12. Controlled tunnel-coupled ferromagnetic electrodes for spin injection in organic single-crystal transistors

    NARCIS (Netherlands)

    Naber, W. J. M.; Craciun, M. F.; Lemmens, J. H. J.; Arkenbout, A. H.; Palstra, T. T. M.; Morpurgo, A. F.; van der Wiel, W. G.

    We report on single-crystal rubrene. eld-effect transistors (FETs) with ferromagnetic Co electrodes, tunnel-coupled to the conduction channel via an Al(2)O(3) tunnel barrier. Magnetic and electronic characterization shows that the Al(2)O(3) film not only protects the Co from undesired oxidation, but

  13. Single-magnon tunneling through a ferromagnetic nanochain

    International Nuclear Information System (INIS)

    Petrov, E.G.; Ostrovsky, V.

    2010-01-01

    Magnon transmission between ferromagnetic contacts coupled by a linear ferromagnetic chain is studied at the condition when the chain exhibits itself as a tunnel magnon transmitter. It is shown that dependently on magnon energy at the chain, a distant intercontact magnon transmission occurs either in resonant or off-resonant tunneling regime. In the first case, a transmission function depends weakly on the number of chain sites whereas at off-resonant regime the same function manifests an exponential drop with the chain length. Change of direction of external magnetic field in one of ferromagnetic contacts blocks a tunnel transmission of magnon.

  14. An Affordable Wet Chemical Route to Grow Conducting Hybrid Graphite-Diamond Nanowires: Demonstration by A Single Nanowire Device.

    Science.gov (United States)

    Shellaiah, Muthaiah; Chen, Tin Hao; Simon, Turibius; Li, Liang-Chen; Sun, Kien Wen; Ko, Fu-Hsiang

    2017-09-11

    We report an affordable wet chemical route for the reproducible hybrid graphite-diamond nanowires (G-DNWs) growth from cysteamine functionalized diamond nanoparticles (ND-Cys) via pH induced self-assembly, which has been visualized through SEM and TEM images. Interestingly, the mechanistic aspects behind that self-assembly directed G-DNWs formation was discussed in details. Notably, above self-assembly was validated by AFM and TEM data. Further interrogations by XRD and Raman data were revealed the possible graphite sheath wrapping over DNWs. Moreover, the HR-TEM studies also verified the coexistence of less perfect sp 2 graphite layer wrapped over the sp 3 diamond carbon and the impurity channels as well. Very importantly, conductivity of hybrid G-DNWs was verified via fabrication of a single G-DNW. Wherein, the better conductivity of G-DNW portion L2 was found as 2.4 ± 1.92 × 10 -6 mS/cm and revealed its effective applicability in near future. In addition to note, temperature dependent carrier transport mechanisms and activation energy calculations were reported in details in this work. Ultimately, to demonstrate the importance of our conductivity measurements, the possible mechanism behind the electrical transport and the comparative account on electrical resistivities of carbon based materials were provided.

  15. Bottom-up and top-down fabrication of nanowire-based electronic devices: In situ doping of vapor liquid solid grown silicon nanowires and etch-dependent leakage current in InGaAs tunnel junctions

    Science.gov (United States)

    Kuo, Meng-Wei

    Semiconductor nanowires are important components in future nanoelectronic and optoelectronic device applications. These nanowires can be fabricated using either bottom-up or top-down methods. While bottom-up techniques can achieve higher aspect ratio at reduced dimension without having surface and sub-surface damage, uniform doping distributions with abrupt junction profiles are less challenging for top-down methods. In this dissertation, nanowires fabricated by both methods were systematically investigated to understand: (1) the in situ incorporation of boron (B) dopants in Si nanowires grown by the bottom-up vapor-liquid-solid (VLS) technique, and (2) the impact of plasma-induced etch damage on InGaAs p +-i-n+ nanowire junctions for tunnel field-effect transistors (TFETs) applications. In Chapter 2 and 3, the in situ incorporation of B in Si nanowires grown using silane (SiH4) or silicon tetrachloride (SiCl4) as the Si precursor and trimethylboron (TMB) as the p-type dopant source is investigated by I-V measurements of individual nanowires. The results from measurements using a global-back-gated test structure reveal nonuniform B doping profiles on nanowires grown from SiH4, which is due to simultaneous incorporation of B from nanowire surface and the catalyst during VLS growth. In contrast, a uniform B doping profile in both the axial and radial directions is achieved for TMBdoped Si nanowires grown using SiCl4 at high substrate temperatures. In Chapter 4, the I-V characteristics of wet- and dry-etched InGaAs p+-i-n+ junctions with different mesa geometries, orientations, and perimeter-to-area ratios are compared to evaluate the impact of the dry etch process on the junction leakage current properties. Different post-dry etch treatments, including wet etching and thermal annealing, are performed and the effectiveness of each is assessed by temperaturedependent I-V measurements. As compared to wet-etched control devices, dry-etched junctions have a significantly

  16. The physics of nanowire superconducting single-photon detectors

    NARCIS (Netherlands)

    Renema, Jelmer Jan

    2015-01-01

    We investigate the detection mechanism in superconducting single photon detectors via quantum detector tomography. We find that the detection event is caused by diffusion of quasiparticles from the absorption spot, combined with entrance of a vortex. Moreover, we investigate the behaviour of

  17. METHOD FOR MANUFACTURING A SINGLE CRYSTAL NANO-WIRE.

    NARCIS (Netherlands)

    Van Den Berg, Albert; Bomer, Johan; Carlen Edwin, Thomas; Chen, Songyue; Kraaijenhagen Roderik, Adriaan; Pinedo Herbert, Michael

    2011-01-01

    A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing

  18. METHOD FOR MANUFACTURING A SINGLE CRYSTAL NANO-WIRE

    NARCIS (Netherlands)

    Van Den Berg, Albert; Bomer, Johan; Carlen Edwin, Thomas; Chen, Songyue; Kraaijenhagen Roderik, Adriaan; Pinedo Herbert, Michael

    2012-01-01

    A method for manufacturing a single crystal nano-structure includes providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to

  19. Anisotropic surface strain in single crystalline cobalt nanowires and its impact on the diameter-dependent Young's modulus

    KAUST Repository

    Huang, Xiaohu

    2013-01-01

    Understanding and measuring the size-dependent surface strain of nanowires are essential to their applications in various emerging devices. Here, we report on the diameter-dependent surface strain and Young\\'s modulus of single-crystalline Co nanowires investigated by in situ X-ray diffraction measurements. Diameter-dependent initial longitudinal elongation of the nanowires is observed and ascribed to the anisotropic surface stress due to the Poisson effect, which serves as the basis for mechanical measurements. As the nanowire diameter decreases, a transition from the "smaller is softer" regime to the "smaller is tougher" regime is observed in the Young\\'s modulus of the nanowires, which is attributed to the competition between the elongation softening and the surface stiffening effects. Our work demonstrates a new nondestructive method capable of measuring the initial surface strain and estimating the Young\\'s modulus of single crystalline nanowires, and provides new insights on the size effect. © 2013 The Royal Society of Chemistry.

  20. Growth and Physical Property Study of Single Nanowire (Diameter ~45 nm of Half Doped Manganite

    Directory of Open Access Journals (Sweden)

    Subarna Datta

    2013-01-01

    Full Text Available We report here the growth and characterization of functional oxide nanowire of hole doped manganite of La0.5Sr0.5MnO3 (LSMO. We also report four-probe electrical resistance measurement of a single nanowire of LSMO (diameter ~45 nm using focused ion beam (FIB fabricated electrodes. The wires are fabricated by hydrothermal method using autoclave at a temperature of 270 °C. The elemental analysis and physical property like electrical resistivity are studied at an individual nanowire level. The quantitative determination of Mn valency and elemental mapping of constituent elements are done by using Electron Energy Loss Spectroscopy (EELS in the Transmission Electron Microscopy (TEM mode. We address the important issue of whether as a result of size reduction the nanowires can retain the desired composition, structure, and physical properties. The nanowires used are found to have a ferromagnetic transition (TC at around 325 K which is very close to the bulk value of around 330 K found in single crystal of the same composition. It is confirmed that the functional behavior is likely to be retained even after size reduction of the nanowires to a diameter of 45 nm. The electrical resistivity shows insulating behavior within the measured temperature range which is similar to the bulk system.

  1. Josephson radiation and shot noise of a semiconductor nanowire junction

    Science.gov (United States)

    van Woerkom, David J.; Proutski, Alex; van Gulik, Ruben J. J.; Kriváchy, Tamás; Car, Diana; Plissard, Sébastian R.; Bakkers, Erik P. A. M.; Kouwenhoven, Leo P.; Geresdi, Attila

    2017-09-01

    We measured the Josephson radiation emitted by an InSb semiconductor nanowire junction utilizing photon-assisted quasiparticle tunneling in an ac-coupled superconducting tunnel junction. We quantify the action of the local microwave environment by evaluating the frequency dependence of the inelastic Cooper-pair tunneling of the nanowire junction and find the zero-frequency impedance Z (0 )=492 Ω with a cutoff frequency of f0=33.1 GHz . We extract a circuit coupling efficiency of η ≈0.1 and a detector quantum efficiency approaching unity in the high-frequency limit. In addition to the Josephson radiation, we identify a shot noise contribution with a Fano factor F ≈1 , consistently with the presence of single electron states in the nanowire channel.

  2. All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

    Science.gov (United States)

    Zhang, Zheng-Zhong; Shen, Rui; Sheng, Li; Wang, Rui-Qiang; Wang, Bai-Gen; Xing, Ding-Yu

    2011-04-01

    A single-molecule magnet (SMM) coupled to two normal metallic electrodes can both switch spin-up and spin-down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.

  3. Fabrication of double-dot single-electron transistor in silicon nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Jo, Mingyu; Kaizawa, Takuya; Arita, Masashi [Graduate School of Information Science and Technology, Hokkaido Univ., Sapporo, 060-0814 (Japan); Fujiwara, Akira; Ono, Yukinori [NTT Basic Research Laboratories, NTT Corporation, 3-1 Morinosato Wakamiya, Atsugi, 243-0198 (Japan); Inokawa, Hiroshi [Research Institute of Electronics, Shizuoka Univ., 3-5-1, Johoku, Hamamatsu, 432-8011 (Japan); Choi, Jung-Bum [Physics and Research Institute of NanoScience and Technology, Chungbuk National Univ., Cheongju, Chungbuk 361-763 (Korea, Republic of); Takahashi, Yasuo, E-mail: y-taka@nano.ist.hokudai.ac.j [Graduate School of Information Science and Technology, Hokkaido Univ., Sapporo, 060-0814 (Japan)

    2010-01-01

    We propose a simple method for fabricating Si single-electron transistors (SET) with coupled dots by means of a pattern-dependent-oxidation (PADOX) method. The PADOX method is known to convert a small one-dimensional Si wire formed on a silicon-on-insulator (SOI) substrate into a SET automatically. We fabricated a double-dot Si SET when we oxidized specially designed Si nanowires formed on SOI substrates. We analyzed the measured electrical characteristics by fitting the measurement and simulation results and confirmed the double-dot formation and the position of the two dots in the Si wire.

  4. Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade.

    Science.gov (United States)

    Memisevic, Elvedin; Hellenbrand, Markus; Lind, Erik; Persson, Axel R; Sant, Saurabh; Schenk, Andreas; Svensson, Johannes; Wallenberg, Reine; Wernersson, Lars-Erik

    2017-07-12

    Tunneling field-effect transistors (TunnelFET), a leading steep-slope transistor candidate, is still plagued by defect response, and there is a large discrepancy between measured and simulated device performance. In this work, highly scaled InAs/In x Ga 1-x As y Sb 1-y /GaSb vertical nanowire TunnelFET with ability to operate well below 60 mV/decade at technically relevant currents are fabricated and characterized. The structure, composition, and strain is characterized using transmission electron microscopy with emphasis on the heterojunction. Using Technology Computer Aided Design (TCAD) simulations and Random Telegraph Signal (RTS) noise measurements, effects of different type of defects are studied. The study reveals that the bulk defects have the largest impact on the performance of these devices, although for these highly scaled devices interaction with even few oxide defects can have large impact on the performance. Understanding the contribution by individual defects, as outlined in this letter, is essential to verify the fundamental physics of device operation, and thus imperative for taking the III-V TunnelFETs to the next level.

  5. Tunneling anisotropic magnetoresistance: A spin-valve-like tunnel magnetoresistance using a single magnetic layer

    Czech Academy of Sciences Publication Activity Database

    Gould, C.; Rüster, C.; Jungwirth, Tomáš; Girgis, E.; Schott, G. M.; Giraud, R.; Brunner, K.; Schmidt, G.; Molenkamp, L. W.

    2004-01-01

    Roč. 93, č. 11 (2004), 117203/1-117203/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : semiconductor spintronics * tunneling anisotropic magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.218, year: 2004

  6. Synthesis and measurements of the optical bandgap of single crystalline complex metal oxide BaCuV2O7 nanowires by UV–VIS absorption

    International Nuclear Information System (INIS)

    Shakir, Imran; Shahid, Muhammad; Aboud, Mohamed F.A.

    2015-01-01

    Highlights: • Synthesis of single crystalline complex metal oxides BaCuV 2 O 7 nanowires. • Surfactant free, economically favorable chemical solution deposition method. • Complex metal oxides nanowires with controlled stoichiometry. • Simply controlling the temperature and thickness of the coated film, we can easily obtain high quality BaCuV 2 O 7 nanowires. - Abstract: The synthesis of single crystalline complex metal oxides BaCuV 2 O 7 nanowires were attained by using surfactant free, economically favorable chemical solution deposition method. A thin layer of BaCuV 2 O 7 nanocrystals is formed by the decomposition of complex metal oxide solution at 150 °C to provide nucleation sites for the growth of nanowires. The synthesized nanowires were typically 1–5 μm long with diameter from 50 to 150 nm. We showed that by simply controlling the temperature and thickness of the coated film, we can easily obtain high quality BaCuV 2 O 7 nanowires. The UV–VIS absorption spectra show indirect bandgap of 2.65 ± 0.05 eV of nanowires. The temperature-dependent resistances of BaCuV 2 O 7 nanowires agree with the exponential correlation, supporting that the conducting carriers are the quasi-free electrons. We believe that our methodology will provides a simple and convenient route for the synthesis of variety of complex metal oxides nanowires with controlled stoichiometry

  7. A radio-frequency single-electron transistor based on an InAs/InP heterostructure nanowire

    DEFF Research Database (Denmark)

    Nilsson, Henrik A.; Duty, Tim; Abay, Simon

    2008-01-01

    We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements...... on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from −0.5 to at least 1.8 V. The charge sensitivity was measured to 32 µerms Hz−1/2 at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just...

  8. Tunnelling determined superconducting energy gap of bulk single crystal aluminum

    International Nuclear Information System (INIS)

    Civiak, R.L.

    1974-01-01

    A procedure has been developed for fabricating Giaver tunnel junctions on bulk aluminum. Al-I-Ag junctions were prepared, where I is the naturally formed oxide on the polished, chemically treated aluminum surface. The aluminum energy gap was determined from tunneling conductance curves obtained from samples oriented in three different crystal directions, and as a function of magnetic field in each of these orientations. In contrast to the results of microwave absorption measurements on superconducting aluminum, no magnetic field dependence could be measured for either the average gap or the spread in gap values of the tunneling electrons. This is consistent with commonly accepted tunneling selection rules, and Garfunkel's interpretation of the microwave behavior which depended upon adjusting the energy spectrum of only the electrons traveling parallel to the surface in the presence of a magnetic field. The energy gaps measured for samples oriented in the 100, 110 and 111 directions are 3.52, 3.50 and 3.39 kT/sub c/, respectively. The trend in the anisotropy is the same as in the calculation of Leavens and Carbotte, however, the magnitude of the anisotropy is smaller than in their calculation and that which previous measurements have indicated

  9. Quantifying the Traction Force of a Single Cell by Aligned Silicon Nanowire Array

    KAUST Repository

    Li, Zhou

    2009-10-14

    The physical behaviors of stationary cells, such as the morphology, motility, adhesion, anchorage, invasion and metastasis, are likely to be important for governing their biological characteristics. A change in the physical properties of mammalian cells could be an indication of disease. In this paper, we present a silicon-nanowire-array based technique for quantifying the mechanical behavior of single cells representing three distinct groups: normal mammalian cells, benign cells (L929), and malignant cells (HeLa). By culturing the cells on top of NW arrays, the maximum traction forces of two different tumor cells (HeLa, L929) have been measured by quantitatively analyzing the bending of the nanowires. The cancer cell exhibits a larger traction force than the normal cell by ∼20% for a HeLa cell and ∼50% for a L929 cell. The traction forces have been measured for the L929 cells and mechanocytes as a function of culture time. The relationship between cells extending area and their traction force has been investigated. Our study is likely important for studying the mechanical properties of single cells and their migration characteristics, possibly providing a new cellular level diagnostic technique. © 2009 American Chemical Society.

  10. Highly efficient electrochemical responses on single crystalline ruthenium-vanadium mixed metal oxide nanowires.

    Science.gov (United States)

    Chun, Sung Hee; Choi, Hyun-A; Kang, Minkyung; Koh, Moonjee; Lee, Nam-Suk; Lee, Sang Cheol; Lee, Minyung; Lee, Youngmi; Lee, Chongmok; Kim, Myung Hwa

    2013-09-11

    Highly efficient single crystalline ruthenium-vanadium mixed metal oxide (Ru1-xVxO2, 0≤x≤1) nanowires were prepared on a SiO2 substrate and a commercial Au microelectrode for the first time through a vapor-phase transport process by adjusting the mixing ratios of RuO2 and VO2 precursors. Single crystalline Ru1-xVxO2 nanowires show homogeneous solid-solution characteristics as well as the distinct feature of having remarkably narrow dimensional distributions. The electrochemical observations of a Ru1-xVxO2 (x=0.28 and 0.66)-decorated Au microelectrode using cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS) demonstrate favorable charge-transfer kinetics of [Fe(CN)6]3-/4- and Ru(NH3)6(3+/2+) couples compared to that of a bare Au microelectrode. The catalytic activity of Ru1-xVxO2 for oxygen and H2O2 reduction at neutral pH increases as the fraction of vanadium increases within our experimental conditions, which might be useful in the area of biofuel cells and biosensors.

  11. Magnetic and superconducting nanowires

    DEFF Research Database (Denmark)

    Piraux, L.; Encinas, A.; Vila, L.

    2005-01-01

    magnetic and superconducting nanowires. Using different approaches entailing measurements on both single wires and arrays, numerous interesting physical properties have been identified in relation to the nanoscopic dimensions of these materials. Finally, various novel applications of the nanowires are also...

  12. Quantum tunneling of magnetization in single molecular magnets coupled to ferromagnetic reservoirs

    Science.gov (United States)

    Misiorny, M.; Barnas, J.

    2007-04-01

    The role of spin polarized reservoirs in quantum tunneling of magnetization and relaxation processes in a single molecular magnet (SMM) is investigated theoretically. The SMM is exchange-coupled to the reservoirs and also subjected to a magnetic field varying in time, which enables the quantum tunneling of magnetization. The spin relaxation times are calculated from the Fermi golden rule. The exchange interaction of SMM and electrons in the leads is shown to affect the spin reversal due to quantum tunneling of magnetization. It is shown that the switching is associated with transfer of a certain charge between the leads.

  13. Two-body tunnel transitions in a Mn 4 single-molecule magnet

    Science.gov (United States)

    Wernsdorfer, W.; Bhaduri, S.; Tiron, R.; Hendrickson, D. N.; Christou, G.

    2004-05-01

    The one-body tunnel picture of single-molecule magnets (SMMs) is not always sufficient to explain the measured tunnel transitions. An improvement to the picture is proposed by including also two-body tunnel transitions such as spin-spin cross-relaxation (SSCR) which are mediated by dipolar and weak superexchange interactions between molecules. A Mn 4 SMM is used as a model system. At certain external fields, SSCRs lead to additional quantum resonances which show up in hysteresis loop measurements as well-defined steps.

  14. Construction of a four tip scanning tunneling microscope/scanning electron microscope combination and conductivity measurements of silicide nanowires; Aufbau einer Vierspitzen-Rastertunnelmikroskop/Rasterelektronenmikroskop-Kombination und Leitfaehigkeitsmessungen an Silizid Nanodraehten

    Energy Technology Data Exchange (ETDEWEB)

    Zubkov, Evgeniy

    2013-09-01

    In this work the combination of a four-tip scanning tunneling microscope with a scanning electron microscope is presented. By means of this apparatus it is possible to perform the conductivity measurements on the in-situ prepared nanostructures in ultra-high vacuum. With the aid of a scanning electron microscope (SEM), it becomes possible to position the tunneling tips of the four-tip scanning tunneling microscope (STM), so that an arrangement for a four-point probe measurement on nanostructures can be obtained. The STM head was built according to the novel coaxial Beetle concept. This concept allows on the one hand, a very compact arrangement of the components of the STM and on the other hand, the new-built STM head has a good mechanical stability, in order to achieve atomic resolution with all four STM units. The atomic resolution of the STM units was confirmed by scanning a Si(111)-7 x 7 surface. The thermal drift during the STM operation, as well as the resonant frequencies of the mechanical structure of the STM head, were determined. The scanning electron microscope allows the precise and safe navigation of the tunneling tips on the sample surface. Multi tip spectroscopy with up to four STM units can be performed synchronously. To demonstrate the capabilities of the new-built apparatus the conductivity measurements were carried out on metallic yttrium silicide nanowires. The nanowires were prepared by the in-situ deposition of yttrium on a heated Si(110) sample surface. Current-voltage curves were recorded on the nanowires and on the wetting layer in-between. The curves indicate an existence of the Schottky barrier between the yttrium silicide nanowires and the silicon bulk. By means of the two-tip measurements with a gate, the insulating property of the Schottky barrier has been confirmed. Using this Schottky barrier, it is possible to limit the current to the nanowire and to prevent it from flowing through the silicon bulk. A four-tip resistance measurement

  15. Fabrication of superconducting nanowire single-photon detectors by nonlinear femtosecond optical lithography

    Science.gov (United States)

    Minaev, N. V.; Tarkhov, M. A.; Dudova, D. S.; Timashev, P. S.; Chichkov, B. N.; Bagratashvili, V. N.

    2018-02-01

    This paper describes a new approach to the fabrication of superconducting nanowire single-photon detectors from ultrathin NbN films on SiO2 substrates. The technology is based on nonlinear femtosecond optical lithography and includes direct formation of the sensitive element of the detector (the meander) through femtosecond laser exposure of the polymethyl methacrylate resist at a wavelength of 525 nm and subsequent removal of NbN using plasma-chemical etching. The nonlinear femtosecond optical lithography method allows the formation of planar structures with a spatial resolution of ~50 nm. These structures were used to fabricate single-photon superconducting detectors with quantum efficiency no worse than 8% at a wavelength of 1310 nm and dark count rate of 10 s‑1 at liquid helium temperature.

  16. Epitaxially aligned cuprous oxide nanowires for all-oxide, single-wire solar cells.

    Science.gov (United States)

    Brittman, Sarah; Yoo, Youngdong; Dasgupta, Neil P; Kim, Si-in; Kim, Bongsoo; Yang, Peidong

    2014-08-13

    As a p-type semiconducting oxide that can absorb visible light, cuprous oxide (Cu2O) is an attractive material for solar energy conversion. This work introduces a high-temperature, vapor-phase synthesis that produces faceted Cu2O nanowires that grow epitaxially along the surface of a lattice-matched, single-crystal MgO substrate. Individual wires were then fabricated into single-wire, all-oxide diodes and solar cells using low-temperature atomic layer deposition (ALD) of TiO2 and ZnO films to form the heterojunction. The performance of devices made from pristine Cu2O wires and chlorine-exposed Cu2O wires was investigated under one-sun and laser illumination. These faceted wires allow the fabrication of well-controlled heterojunctions that can be used to investigate the interfacial properties of all-oxide solar cells.

  17. Self-aligned multi-channel superconducting nanowire single-photon detectors.

    Science.gov (United States)

    Cheng, Risheng; Guo, Xiang; Ma, Xiaosong; Fan, Linran; Fong, King Y; Poot, Menno; Tang, Hong X

    2016-11-28

    We describe a micromachining process to allow back-side coupling of an array of single-mode telecommunication fibers to individual superconducting nanowire single photon detectors (SNSPDs). This approach enables a back-illuminated detector structure which separates the optical access and electrical readout on two sides of the chip and thus allows for compact integration of multi-channel detectors. As proof of principle, we show the integration of four detectors on the same silicon chip with two different designs and their performances are compared. In the optimized design, the device shows saturated system detection efficiency of 16% while the dark count rate is less than 20 Hz, all achieved without the use of metal reflectors or distributed Bragg reflectors (DBRs). This back-illumination approach also eliminates the cross-talk between different detection channels.

  18. Kinetic parameter estimation and fluctuation analysis of CO at SnO2 single nanowires.

    Science.gov (United States)

    Tulzer, Gerhard; Baumgartner, Stefan; Brunet, Elise; Mutinati, Giorgio C; Steinhauer, Stephan; Köck, Anton; Barbano, Paolo E; Heitzinger, Clemens

    2013-08-09

    In this work, we present calculated numerical values for the kinetic parameters governing adsorption/desorption processes of carbon monoxide at tin dioxide single-nanowire gas sensors. The response of such sensors to pulses of 50 ppm carbon monoxide in nitrogen is investigated at different temperatures to extract the desired information. A rate-equation approach is used to model the reaction kinetics, which results in the problem of determining coefficients in a coupled system of nonlinear ordinary differential equations. The numerical values are computed by inverse-modeling techniques and are then used to simulate the sensor response. With our model, the dynamic response of the sensor due to the gas-surface interaction can be studied in order to find the optimal setup for detection, which is an important step towards selectivity of these devices. We additionally investigate the noise in the current through the nanowire and its changes due to the presence of carbon monoxide in the sensor environment. Here, we propose the use of a wavelet transform to decompose the signal and analyze the noise in the experimental data. This method indicates that some fluctuations are specific for the gas species investigated here.

  19. Kinetic parameter estimation and fluctuation analysis of CO at SnO 2 single nanowires

    KAUST Repository

    Tulzer, Gerhard

    2013-07-12

    In this work, we present calculated numerical values for the kinetic parameters governing adsorption/desorption processes of carbon monoxide at tin dioxide single-nanowire gas sensors. The response of such sensors to pulses of 50 ppm carbon monoxide in nitrogen is investigated at different temperatures to extract the desired information. A rate-equation approach is used to model the reaction kinetics, which results in the problem of determining coefficients in a coupled system of nonlinear ordinary differential equations. The numerical values are computed by inverse-modeling techniques and are then used to simulate the sensor response. With our model, the dynamic response of the sensor due to the gas-surface interaction can be studied in order to find the optimal setup for detection, which is an important step towards selectivity of these devices. We additionally investigate the noise in the current through the nanowire and its changes due to the presence of carbon monoxide in the sensor environment. Here, we propose the use of a wavelet transform to decompose the signal and analyze the noise in the experimental data. This method indicates that some fluctuations are specific for the gas species investigated here. © 2013 IOP Publishing Ltd.

  20. Planar heterostructures of single-layer transition metal dichalcogenides: Composite structures, Schottky junctions, tunneling barriers, and half metals

    Science.gov (United States)

    Aras, Mehmet; Kılıç, ćetin; Ciraci, S.

    2017-02-01

    Planar composite structures formed from the stripes of transition metal dichalcogenides joined commensurately along their zigzag or armchair edges can attain different states in a two-dimensional (2D), single-layer, such as a half metal, 2D or one-dimensional (1D) nonmagnetic metal and semiconductor. Widening of stripes induces metal-insulator transition through the confinements of electronic states to adjacent stripes, that results in the metal-semiconductor junction with a well-defined band lineup. Linear bending of the band edges of the semiconductor to form a Schottky barrier at the boundary between the metal and semiconductor is revealed. Unexpectedly, strictly 1D metallic states develop in a 2D system along the boundaries between stripes, which pins the Fermi level. Through the δ doping of a narrow metallic stripe one attains a nanowire in the 2D semiconducting sheet or narrow band semiconductor. A diverse combination of constituent stripes in either periodically repeating or finite-size heterostructures can acquire critical fundamental features and offer device capacities, such as Schottky junctions, nanocapacitors, resonant tunneling double barriers, and spin valves. These predictions are obtained from first-principles calculations performed in the framework of density functional theory.

  1. Radiation- and phonon-bottleneck--induced tunneling in the Fe8 single-molecule magnet

    Science.gov (United States)

    Bal, M.; Friedman, Jonathan R.; Chen, W.; Tuominen, M. T.; Beedle, C. C.; Rumberger, E. M.; Hendrickson, D. N.

    2008-04-01

    We measure magnetization changes in a single crystal of the single-molecule magnet Fe8 when exposed to intense, short (spin dynamics, allowing observation of thermally assisted resonant tunneling between spin states at the 100 ns time scale. Detailed numerical simulations quantitatively reproduce the data and yield a spin-phonon relaxation time T1~40 ns.

  2. Controlled synthesis of organic single-crystalline nanowires via the synergy approach of the bottom-up/top-down processes.

    Science.gov (United States)

    Zhuo, Ming-Peng; Zhang, Ye-Xin; Li, Zhi-Zhou; Shi, Ying-Li; Wang, Xue-Dong; Liao, Liang-Sheng

    2018-03-15

    The controlled fabrication of organic single-crystalline nanowires (OSCNWs) with a uniform diameter in the nanoscale via the bottom-up approach, which is just based on weak intermolecular interaction, is a great challenge. Herein, we utilize the synergy approach of the bottom-up and the top-down processes to fabricate OSCNWs with diameters of 120 ± 10 nm through stepwise evolution processes. Specifically, the evolution processes vary from the self-assembled organic micro-rods with a quadrangular pyramid-like end-structure bounded with {111}s and {11-1}s crystal planes to the "top-down" synthesized organic micro-rods with the flat cross-sectional {002}s plane, to the organic micro-tubes with a wall thickness of ∼115 nm, and finally to the organic nanowires. Notably, the anisotropic etching process caused by the protic solvent molecules (such as ethanol) is crucial for the evolution of the morphology throughout the whole top-down process. Therefore, our demonstration opens a new avenue for the controlled-fabrication of organic nanowires, and also contributes to the development of nanowire-based organic optoelectronics such as organic nanowire lasers.

  3. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays

    KAUST Repository

    Zhai, Yujia

    2012-11-26

    We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf

  4. Single nanowire electrode electrochemistry of silicon anode by in situ atomic force microscopy: solid electrolyte interphase growth and mechanical properties.

    Science.gov (United States)

    Liu, Xing-Rui; Deng, Xin; Liu, Ran-Ran; Yan, Hui-Juan; Guo, Yu-Guo; Wang, Dong; Wan, Li-Jun

    2014-11-26

    Silicon nanowires (SiNWs) have attracted great attention as promising anode materials for lithium ion batteries (LIBs) on account of their high capacity and improved cyclability compared with bulk silicon. The interface behavior, especially the solid electrolyte interphase (SEI), plays a significant role in the performance and stability of the electrodes. We report herein an in situ single nanowire atomic force microscopy (AFM) method to investigate the interface electrochemistry of silicon nanowire (SiNW) electrode. The morphology and Young's modulus of the individual SiNW anode surface during the SEI growth were quantitatively tracked. Three distinct stages of the SEI formation on the SiNW anode were observed. On the basis of the potential-dependent morphology and Young's modulus evolution of SEI, a mixture-packing structural model was proposed for the SEI film on SiNW anode.

  5. Low-threshold room-temperature AlGaAs/GaAs nanowire/single-quantum-well heterostructure laser

    Science.gov (United States)

    Yan, Xin; Wei, Wei; Tang, Fengling; Wang, Xi; Li, Luying; Zhang, Xia; Ren, Xiaomin

    2017-02-01

    Near-infrared nanowire lasers are promising as ultrasmall, low-consumption light emitters in on-chip optical communications and computing systems. Here, we report on a room-temperature near-infrared nanolaser based on an AlGaAs/GaAs nanowire/single-quantum-well heterostructure grown by Au-catalyzed metal organic chemical vapor deposition. When subjects to pulsed optical excitation, the nanowire exhibits lasing, with a low threshold of 600 W/cm2, a narrow linewidth of 0.39 nm, and a high Q factor of 2000 at low temperature. Lasing is observed up to 300 K, with an ultrasmall temperature dependent wavelength shift of 0.045 nm/K. This work paves the way towards ultrasmall, low-consumption, and high-temperature-stability near-infrared nanolasers.

  6. InAs/Si Hetero-Junction Nanotube Tunnel Transistors

    OpenAIRE

    Hanna, Amir N.; Fahad, Hossain M.; Hussain, Muhammad M.

    2015-01-01

    Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ?ON? state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunnel...

  7. Single injection of platelet-rich plasma as a novel treatment of carpal tunnel syndrome

    Directory of Open Access Journals (Sweden)

    Michael Alexander Malahias

    2015-01-01

    Full Text Available Both in vitro and in vivo experiments have confirmed that platelet-rich plasma has therapeutic effects on many neuropathies, but its effects on carpal tunnel syndrome remain poorly understood. We aimed to investigate whether single injection of platelet-rich plasma can improve the clinical symptoms of carpal tunnel syndrome. Fourteen patients presenting with median nerve injury who had suffered from mild carpal tunnel syndrome for over 3 months were included in this study. Under ultrasound guidance, 1-2 mL of platelet-rich plasma was injected into the region around the median nerve at the proximal edge of the carpal tunnel. At 1 month after single injection of platelet-rich plasma, Visual Analogue Scale results showed that pain almost disappeared in eight patients and it was obviously alleviated in three patients. Simultaneously, the disabilities of the arm, shoulder and hand questionnaire showed that upper limb function was obviously improved. In addition, no ultrasonographic manifestation of the carpal tunnel syndrome was found in five patients during ultrasonographic measurement of the width of the median nerve. During 3-month follow-up, the pain was not greatly alleviated in three patients. These findings show very encouraging mid-term outcomes regarding use of platelet-rich plasma for the treatment of carpal tunnel syndrome.

  8. Spin- and energy-dependent tunneling through a single molecule with intramolecular spatial resolution.

    Science.gov (United States)

    Brede, Jens; Atodiresei, Nicolae; Kuck, Stefan; Lazić, Predrag; Caciuc, Vasile; Morikawa, Yoshitada; Hoffmann, Germar; Blügel, Stefan; Wiesendanger, Roland

    2010-07-23

    We investigate the spin- and energy-dependent tunneling through a single organic molecule (CoPc) adsorbed on a ferromagnetic Fe thin film, spatially resolved by low-temperature spin-polarized scanning tunneling microscopy. Interestingly, the metal ion as well as the organic ligand show a significant spin dependence of tunneling current flow. State-of-the-art ab initio calculations including also van der Waals interactions reveal a strong hybridization of molecular orbitals and substrate 3d states. The molecule is anionic due to a transfer of one electron, resulting in a nonmagnetic (S=0) state. Nevertheless, tunneling through the molecule exhibits a pronounced spin dependence due to spin-split molecule-surface hybrid states.

  9. Nanotubes and nanowires

    Indian Academy of Sciences (India)

    Unknown

    nanotubes are likely to be useful as nanochips since they exhibit diode properties at the junction. By making use of carbon nanotubes, nanowires of metals, metal oxides and GaN have been obtained. Both the oxide and GaN nanowires are single crystalline. Gold nanowires exhibit plasmon bands varying markedly with.

  10. Polarization Dependence of Surface Enhanced Raman Scattering on a Single Dielectric Nanowire

    Directory of Open Access Journals (Sweden)

    Hua Qi

    2012-01-01

    Full Text Available Our measurements of surface enhanced Raman scattering (SERS on Ga2O3 dielectric nanowires (NWs core/silver composites indicate that the SERS enhancement is highly dependent on the polarization direction of the incident laser light. The polarization dependence of the SERS signal with respect to the direction of a single NW was studied by changing the incident light angle. Further investigations demonstrate that the SERS intensity is not only dependent on the direction and wavelength of the incident light, but also on the species of the SERS active molecule. The largest signals were observed on an NW when the incident 514.5 nm light was polarized perpendicular to the length of the NW, while the opposite phenomenon was observed at the wavelength of 785 nm. Our theoretical simulations of the polarization dependence at 514.5 nm and 785 nm are in good agreement with the experimental results.

  11. Room temperature strong coupling effects from single ZnO nanowire microcavity

    KAUST Repository

    Das, Ayan

    2012-05-01

    Strong coupling effects in a dielectric microcavity with a single ZnO nanowire embedded in it have been investigated at room temperature. A large Rabi splitting of ?100 meV is obtained from the polariton dispersion and a non-linearity in the polariton emission characteristics is observed at room temperature with a low threshold of 1.63 ?J/cm2, which corresponds to a polariton density an order of magnitude smaller than that for the Mott transition. The momentum distribution of the lower polaritons shows evidence of dynamic condensation and the absence of a relaxation bottleneck. The polariton relaxation dynamics were investigated by timeresolved measurements, which showed a progressive decrease in the polariton relaxation time with increase in polariton density. © 2012 Optical Society of America.

  12. Extracting random numbers from quantum tunnelling through a single diode.

    Science.gov (United States)

    Bernardo-Gavito, Ramón; Bagci, Ibrahim Ethem; Roberts, Jonathan; Sexton, James; Astbury, Benjamin; Shokeir, Hamzah; McGrath, Thomas; Noori, Yasir J; Woodhead, Christopher S; Missous, Mohamed; Roedig, Utz; Young, Robert J

    2017-12-19

    Random number generation is crucial in many aspects of everyday life, as online security and privacy depend ultimately on the quality of random numbers. Many current implementations are based on pseudo-random number generators, but information security requires true random numbers for sensitive applications like key generation in banking, defence or even social media. True random number generators are systems whose outputs cannot be determined, even if their internal structure and response history are known. Sources of quantum noise are thus ideal for this application due to their intrinsic uncertainty. In this work, we propose using resonant tunnelling diodes as practical true random number generators based on a quantum mechanical effect. The output of the proposed devices can be directly used as a random stream of bits or can be further distilled using randomness extraction algorithms, depending on the application.

  13. Conductance of a proximitized nanowire in the Coulomb blockade regime

    Science.gov (United States)

    van Heck, B.; Lutchyn, R. M.; Glazman, L. I.

    2016-06-01

    We identify the leading processes of electron transport across finite-length segments of proximitized nanowires and build a quantitative theory of their two-terminal conductance. In the presence of spin-orbit interaction, a nanowire can be tuned across the topological transition point by an applied magnetic field. Due to a finite segment length, electron transport is controlled by the Coulomb blockade. Upon increasing of the field, the shape and magnitude of the Coulomb blockade peaks in the linear conductance are defined, respectively, by Andreev reflection, single-electron tunneling, and resonant tunneling through the Majorana modes emerging after the topological transition. Our theory provides the framework for the analysis of experiments with proximitized nanowires [such as reported in S. M. Albrecht et al., Nature (London) 531, 206 (2016), 10.1038/nature17162] and identifies the signatures of the topological transition in the two-terminal conductance.

  14. Single Nanostructure Electrochemical Devices for Studying Electronic Properties and Structural Changes in Lithiated Si Nanowires

    KAUST Repository

    McDowell, Matthew T.

    2011-07-19

    Nanostructured Si is a promising anode material for the next generation of Li-ion batteries, but few studies have focused on the electrical properties of the Li-Si alloy phase, which are important for determining power capabilities and ensuring sufficient electrical conduction in the electrode structure. Here, we demonstrate an electrochemical device framework suitable for testing the electrical properties of single Si nanowires (NWs) at different lithiation states and correlating these properties with structural changes via transmission electron microscopy (TEM). We fi nd that single Si NWs usually exhibit Ohmic I - V response in the lithiated state, with conductivities two to three orders of magnitude higher than in the delithiated state. After a number of sequential lithiation/delithiation cycles, the single NWs show similar conductivity after each lithiation step but show large variations in conductivity in the delithiated state. Finally, devices with groups of NWs in physical contact were fabricated, and structural changes in the NWs were observed after lithiation to investigate how the electrical resistance of NW junctions and the NWs themselves affect the lithiation behavior. The results suggest that electrical resistance of NW junctions can limit lithiation. Overall, this study shows the importance of investigating the electronic properties of individual components of a battery electrode (single nanostructures in this case) along with studying the nature of interactions within a collection of these component structures. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  15. Intrinsic and doped coupled quantum dots created by local modulation of implantation in a silicon nanowire

    Science.gov (United States)

    Pierre, M.; Roche, B.; Wacquez, R.; Jehl, X.; Sanquer, M.; Vinet, M.

    2011-04-01

    We present a systematic study of various ways (top gates, local doping, substrate bias) to fabricate and tune multi-dot structures in silicon nanowire multigate metal-oxide-semiconductor field-effect transistors. The carrier concentration profile of the silicon nanowire is a key parameter to control the formation of tunnel barriers and single-electron islands. It is determined both by the doping profile of the nanowire and by the voltages applied to the top gates and to the substrate. Local doping is achieved with the realization of up to two arsenic implantation steps in combination with gates and nitride spacers acting as a mask. We compare nominally identical devices with different implantations and different voltages applied to the substrate, leading to the realization of both intrinsic and doped coupled dot structures. We demonstrate devices in which all the tunnel resistances toward the electrodes and between the dots can be independently tuned with the control top gates wrapping the silicon nanowire.

  16. Electro-optic single-crystalline organic waveguides and nanowires grown from the melt.

    Science.gov (United States)

    Figi, Harry; Jazbinsek, Mojca; Hunziker, Christoph; Koechlin, Manuel; Günter, Peter

    2008-07-21

    Organic nonlinear optical materials have proven to possess high and extremely fast nonlinearities compared to conventional inorganic crystals, allowing for sub-1-V driving voltages and modulation bandwidths of over 100 GHz. Compared to more widely studied poled electro-optic polymers, organic electro-optic crystals exhibit orders of magnitude better thermal and photochemical stability. The lack of available structuring techniques for organic crystals has been the major drawback for exploring their potential for photonic structures. Here we present a new approach to fabricate high-quality electro-optic single crystal waveguides and nanowires of configurationally locked polyene DAT2 (2-(3-(2-(4-dimethylaminophenyl)vinyl)-5,5-dimethylcyclohex-2-enylidene)malononitrile). The high-index-contrast waveguides (delta(n) = 0.54 +/- 0.04) are grown from the melt between two anodically bonded borosilicate glass wafers, which are structured and equipped with electrodes prior to bonding. Electro-optic phase modulation is demonstrated for the first time in the non-centrosymmetric DAT2 single crystalline channel waveguides at a wavelength of 1.55 microm. We also show that this technique in combination with DAT2 material allows for the fabrication of single-crystalline nanostructures inside large-area devices with crystal thicknesses below 30 nm and lengths of above 7 mm.

  17. Probing the local environment of a single OPE3 molecule using inelastic tunneling electron spectroscopy

    NARCIS (Netherlands)

    Frisenda, R.; Perrin, M.L.; Van der Zant, H.S.J.

    2015-01-01

    We study single-molecule oligo(phenylene ethynylene)dithiol junctions by means of inelastic electron tunneling spectroscopy (IETS). The molecule is contacted with gold nano-electrodes formed with the mechanically controllable break junction technique. We record the IETS spectrum of the molecule from

  18. Current response of ac-driven nanoelectromechanical systems in single-electron tunneling regime

    OpenAIRE

    Labadze, G.; Blanter, Ya. M.

    2010-01-01

    We investigate electric current in a single-electron tunnelling device weakly coupled to an ac-driven underdamped harmonic nanomechanical oscillator. In the linear regime, the current can respond to the external frequency in a resonant as well as in an anti-resonant fashion. The main resonance is accompanied by an additional resonance at a half of the external frequency.

  19. Nanoampere charge pump by single-electron ratchet using silicon nanowire metal-oxide-semiconductor field-effect transistor

    Science.gov (United States)

    Fujiwara, Akira; Nishiguchi, Katsuhiko; Ono, Yukinori

    2008-01-01

    Nanoampere single-electron pumping is presented at 20K using a single-electron ratchet comprising silicon nanowire metal-oxide-semiconductor field-effect transistors. The ratchet features an asymmetric potential with a pocket that captures single electrons from the source and ejects them to the drain. Directional single-electron transfer is achieved by applying one ac signal with the frequency up to 2.3GHz. We find anomalous shapes of current steps which can be ascribed to nonadiabatic electron capture.

  20. Radio frequency scanning tunneling spectroscopy for single-molecule spin resonance.

    Science.gov (United States)

    Müllegger, Stefan; Tebi, Stefano; Das, Amal K; Schöfberger, Wolfgang; Faschinger, Felix; Koch, Reinhold

    2014-09-26

    We probe nuclear and electron spins in a single molecule even beyond the electromagnetic dipole selection rules, at readily accessible magnetic fields (few mT) and temperatures (5 K) by resonant radio-frequency current from a scanning tunneling microscope. We achieve subnanometer spatial resolution combined with single-spin sensitivity, representing a 10 orders of magnitude improvement compared to existing magnetic resonance techniques. We demonstrate the successful resonant spectroscopy of the complete manifold of nuclear and electronic magnetic transitions of up to ΔI(z)=±3 and ΔJ(z)=±12 of single quantum spins in a single molecule. Our method of resonant radio-frequency scanning tunneling spectroscopy offers, atom-by-atom, unprecedented analytical power and spin control with an impact on diverse fields of nanoscience and nanotechnology.

  1. Radial composition of single InGaN nanowires: a combined study by EDX, Raman spectroscopy, and X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Gomez-Gomez, M.; Garro, N.; Cantarero, A. [Institut de Ciencia dels Materials, Universitat de Valencia, Paterna (Spain); Segura-Ruiz, J.; Martinez-Criado, G.; Chu, M.H. [European Synchrotron Radiation Facility, Experiments Division, Grenoble (France); Denker, C.; Malindretos, J.; Rizzi, A. [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

    2013-10-15

    The radial alloy distribution of In{sub x} Ga{sub 1-x}N nanowires grown by plasma-assisted molecular beam epitaxy has been investigated by three different techniques with nanometric spatial resolution and capability to study single nanowires. Energy-dispersive X-ray spectroscopy radial line-scans revealed a gradient in the alloy composition of individual nanowires. Resonant Raman scattering and spatially resolved X-ray diffraction showed the existence of three distinctive regions with different alloy composition. The combination of the three techniques provides robust evidence of the spontaneous formation of a core-shell structure with a thin Ga-richer shell wrapping an In-rich core at the bottom part of the nanowires. This composition-modulated nanostructure offers an attractive way to explore new device concepts in fully epitaxial nanowire-based solar cells. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  2. Radial composition of single InGaN nanowires: a combined study by EDX, Raman spectroscopy, and X-ray diffraction

    International Nuclear Information System (INIS)

    Gomez-Gomez, M.; Garro, N.; Cantarero, A.; Segura-Ruiz, J.; Martinez-Criado, G.; Chu, M.H.; Denker, C.; Malindretos, J.; Rizzi, A.

    2013-01-01

    The radial alloy distribution of In x Ga 1-x N nanowires grown by plasma-assisted molecular beam epitaxy has been investigated by three different techniques with nanometric spatial resolution and capability to study single nanowires. Energy-dispersive X-ray spectroscopy radial line-scans revealed a gradient in the alloy composition of individual nanowires. Resonant Raman scattering and spatially resolved X-ray diffraction showed the existence of three distinctive regions with different alloy composition. The combination of the three techniques provides robust evidence of the spontaneous formation of a core-shell structure with a thin Ga-richer shell wrapping an In-rich core at the bottom part of the nanowires. This composition-modulated nanostructure offers an attractive way to explore new device concepts in fully epitaxial nanowire-based solar cells. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Low Leakage Superconducting Tunnel Junctions with a Single Crystal Al2O3 Barrier

    Science.gov (United States)

    2016-03-30

    three layers were grown in situ in an ultra high vacuum (UHV) system with a nominal base pressure of ~1×10-10 Torr. First, a 120~150 nm thick...current-voltage (I-V) curves of a typical single-crystal Al2O3 tunnel junction taken at ~80 mK . One way to quantify the junction quality is to define a...80 mK on an epi-Re/epi-Al2O3/poly-Al tunnel junction. (a) Linear vertical scale. (b) Logarithmic vertical scale: absolute value is used. This

  4. Observation of negative differential resistance and single-electron tunneling in electromigrated break junctions

    International Nuclear Information System (INIS)

    Noguchi, Yutaka; Ueda, Rieko; Kubota, Tohru; Kamikado, Toshiya; Yokoyama, Shiyoshi; Nagase, Takashi

    2008-01-01

    We observed a negative differential resistance (NDR) along with single-electron tunneling (SET) in the electron transport of electromigrated break junctions with metal-free tetraphenylporphyrin (H 2 BSTBPP) at a temperature of 11 K. The NDR strongly depended on the applied gate voltages, and appeared only in the electron tunneling region of the Coulomb diamond. We could explain the mechanism of this new type of electron transport by a model assuming a molecular Coulomb island and local density of states of the source and the drain electrodes

  5. Low Temperature Scanning Tunneling Spectroscopy of isolated Mn12-Ph Single Molecule Magnets

    Science.gov (United States)

    Reaves, K.; Han, P.; Iwaya, K.; Hitosugi, T.; Packwood, D.; Katzgraber, H. G.; Zhao, H.; Dunbar, K. R.; Kim, K.; Teizer, W.

    2015-03-01

    We study Mn12O12(C6H5COO)16(H2O)4 (Mn12-Ph) single-molecule magnets on a Cu(111) surface using scanning tunneling microscopy and scanning tunneling spectroscopy at cryogenic temperatures (T a strong bias voltage dependence within the molecular interior. The qualitative features of these I vs.V curves differ by spatial location in several intriguing ways (e.g. fixed junction impedance with increasing bias voltages). We explore these normalized I vs. V curves and present a phenomenological explanation for the observed behaviors, corresponding to the physical and electronic structure within the molecule. Funding from WPI-AIMR.

  6. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Galloway, H.C.

    1995-12-01

    Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides

  7. A radio frequency single-electron transistor based on an InAs/InP heterostructure nanowire.

    Science.gov (United States)

    Nilsson, Henrik A; Duty, Tim; Abay, Simon; Wilson, Chris; Wagner, Jakob B; Thelander, Claes; Delsing, Per; Samuelson, Lars

    2008-03-01

    We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from -0.5 to at least 1.8 V. The charge sensitivity was measured to 32 microe rms Hz(-1/2) at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just before carrier depletion. This device had a charge sensitivity of 2.5 microe rms Hz(-1/2). At low frequencies this device showed a typical 1/f noise behavior, with a level extrapolated to 300 microe rms Hz(-1/2) at 10 Hz.

  8. Tetrairon(III) Single Molecule Magnet Studied by Scanning Tunneling Microscopy and Spectroscopy

    Science.gov (United States)

    Oh, Youngtek; Jeong, Hogyun; Lee, Minjun; Kwon, Jeonghoon; Yu, Jaejun; Mamun, Shariful Islam; Gupta, Gajendra; Kim, Jinkwon; Kuk, Young

    2011-03-01

    Tetrairon(III) single-molecule magnet (SMM) on a clean Au(111) has studied using scanning tunneling microscopy (STM) and spectroscopy (STS) to understand quantum mechanical tunneling of magnetization and hysteresis of pure molecular origin. Before the STM studies, elemental analysis, proton nuclear magnetic resonance (NMR) measurement and Energy Dispersive X- ray Spectroscopy (EDS) were carried out to check the robustness of the sample. The STM image of this molecule shows a hexagonal shape, with a phenyl ring at the center and surrounding six dipivaloylmethane ligands. Two peaks are observed at 0.5 eV, 1.5 eV in the STS results, agreeing well with the first principles calculations. Spin-polarized scanning tunneling microscopy (SPSTM) measurements have been performed with a magnetic tip to get the magnetization image of the SMM. We could observe the antiferromagnetic coupling and a centered- triangular topology with six alkoxo bridges inside the molecule while applying external magnetic fields.

  9. Analytical calculation of spin tunneling effect in single molecule magnet Fe8 with considering quadrupole excitation

    Directory of Open Access Journals (Sweden)

    Y Yousefi

    2018-02-01

    Full Text Available Spin tunneling effect in Single Molecule Magnet Fe8 is studied by instanton calculation technique using SU(3 generalized spin coherent state in real parameter as a trial function. For this SMM, tunnel splitting arises due to the presence of a Berry like phase in action, which causes interference between tunneling trajectories (instantons. For this SMM, it is established that the use of quadrupole excitation (g dependence changes not only the location of the quenching points, but also the number of these points. Also, these quenching points are the steps in hysteresis loops of this SMM. If dipole and quadrupole excitations in classical energy considered, the number of these steps equals to the number that obtained from experimental data.

  10. Single-charge tunneling in ambipolar silicon quantum dots

    NARCIS (Netherlands)

    Müller, Filipp

    2015-01-01

    Spin qubits in coupled quantum dots (QDs) are promising for future quantum information processing (QIP). A quantum bit (qubit) is the quantum mechanical analogon of a classical bit. In general, each quantum mechanical two-level system can represent a qubit. For the spin of a single charge carrier

  11. Suppression of Magnetic Quantum Tunneling in a Chiral Single-Molecule Magnet by Ferromagnetic Interactions.

    Science.gov (United States)

    Lippert, Kai-Alexander; Mukherjee, Chandan; Broschinski, Jan-Philipp; Lippert, Yvonne; Walleck, Stephan; Stammler, Anja; Bögge, Hartmut; Schnack, Jürgen; Glaser, Thorsten

    2017-12-18

    Single-molecule magnets (SMMs) retain a magnetization without applied magnetic field for a decent time due to an energy barrier U for spin-reversal. Despite the success to increase U, the difficult to control magnetic quantum tunneling often leads to a decreased effective barrier U eff and a fast relaxation. Here, we demonstrate the influence of the exchange coupling on the tunneling probability in two heptanuclear SMMs hosting the same spin-system with the same high spin ground state S t = 21/2. A chirality-induced symmetry reduction leads to a switch of the Mn III -Mn III exchange from antiferromagnetic in the achiral SMM [Mn III 6 Cr III ] 3+ to ferromagnetic in the new chiral SMM RR [Mn III 6 Cr III ] 3+ . Multispin Hamiltonian analysis by full-matrix diagonalization demonstrates that the ferromagnetic interactions in RR [Mn III 6 Cr III ] 3+ enforce a well-defined S t = 21/2 ground state with substantially less mixing of M S substates in contrast to [Mn III 6 Cr III ] 3+ and no tunneling pathways below the top of the energy barrier. This is experimentally verified as U eff is smaller than the calculated energy barrier U in [Mn III 6 Cr III ] 3+ due to tunneling pathways, whereas U eff equals U in RR [Mn III 6 Cr III ] 3+ demonstrating the absence of quantum tunneling.

  12. Blue single photon emission up to 200 K from an InGaN quantum dot in AlGaN nanowire

    Energy Technology Data Exchange (ETDEWEB)

    Deshpande, Saniya; Das, Ayan; Bhattacharya, Pallab [Center for Photonics and Multiscale Nanomaterials, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 (United States)

    2013-04-22

    We demonstrate polarized blue single photon emission up to 200 K from an In{sub 0.2}Ga{sub 0.8}N quantum dot in a single Al{sub 0.1}Ga{sub 0.9}N nanowire. The InGaN/AlGaN dot-in-nanowire heterostructure was grown on (111) silicon by plasma assisted molecular beam epitaxy. Nanowires dispersed on a silicon substrate show sharp exciton and biexciton transitions in the micro-photoluminescence spectra. Second-order correlation measurements performed under pulsed excitation at the biexciton wavelength confirm single photon emission, with a g{sup (2)}(0) of 0.43 at 200 K. The emitted photons have a short radiative lifetime of 0.7 ns and are linearly polarized along the c-axis of the nanowire with a degree of polarization of 78%.

  13. Synthesis and magnetotransport studies of single nickel-rich NiFe nanowire

    International Nuclear Information System (INIS)

    Rheem, Y; Yoo, B-Y; Koo, B K; Beyermann, W P; Myung, N V

    2007-01-01

    One of the main concerns in the preparation of alloy nanowires is the ability to synthesize compositionally uniform nanowires along the axis. Since most of the conventional mild acidic permalloy (Ni 80 Fe 20 ) electroplating baths consist of an extremely low concentration of Fe ions compared with Ni ions, the electrodeposition of iron is controlled by mass transfer, which leads to a significant change in the composition along the axis of the nanowire. To overcome this obstacle, we developed a new acidic chloride electrolyte with a high concentration of Fe and Ni ions to electrodeposit homogeneous nanowires. After synthesizing nanowires, the temperature dependent magneto- and electro-transport properties of individual nanowires were investigated. The temperature coefficient of resistance of a nanowire is much lower than the bulk counterpart, which might be attributed to a higher residual resistivity. The magnetoresistance shows a typical anisotropic magnetoresistance behaviour where the maximum anisotropic magnetoresistance ratio decreased with increasing temperature. The angular dependence of the magnetization switching field indicated that curling is the magnetization reversal mode at all temperatures

  14. Electron transport in InAs nanowires and heterostructure nanowire devices

    Science.gov (United States)

    Thelander, C.; Björk, M. T.; Larsson, M. W.; Hansen, A. E.; Wallenberg, L. R.; Samuelson, L.

    2004-09-01

    Nanowires in the InAs/InP material system are grown with catalyst-assisted chemical beam epitaxy. Ohmic contacts are then fabricated to selected wires, allowing electron transport measurements to be carried out at room-temperature as well as at low T. InAs nanowires show strong quantum confinement effects, where thin wires (Heterostructure barriers of InP are also incorporated into InAs wires to produce resonant tunneling diodes and single-electron transistors (SETs) with different dot lengths. Wires containing dots with a length of 100 nm function as ideal SETs, whereas the transport in wires with 15 nm long dots is strongly governed by quantum confinement and resonant tunneling. For the smaller dots it is possible to observe electron transport through excited states.

  15. Optoelectronics: Continuously Spatial-Wavelength-Tunable Nanowire Lasers on a Single Chip

    Science.gov (United States)

    2014-01-28

    journals (N/A for none) 1. P. L. Nichols, Z. Liu, L. Yin, and C. Z. Ning, CdxPb1-xS Alloy Nanowires and Heterostructures with Simultaneous Emission in Mid...K. Ding, M. T. Hill, and C.Z. Ning, A Top-down Approach to Fabrication of High Quality Vertical Heterostructure Nanowire Arrays, Nano Lett., 11, 1646...2010 Paper submitted: 1. P. L. Nichols, Z. Liu, L. Yin, and C. Z. Ning, CdxPb1-xS Alloy Nanowires and Heterostructures with Simultaneous Emission

  16. Al-doped single-crystalline SiC nanowires synthesized by pyrolysis of polymer precursors.

    Science.gov (United States)

    Yang, Weiyou; Gao, Fengmei; Fan, Yi; An, Linan

    2010-07-01

    Al-doped 6H-SiC nanowires are synthesized by catalyst-assisted pyrolysis of polymer precursors. The obtained nanowires were characterized using scanning electron microscopy, X-ray diffraction, transmission electron microscopy and selective area electron diffraction. We demonstrate that doping concentrations can be controlled by tailoring the Al concentrations in the precursors. We also find that Al-doping has a profound effect on the morphology and emission behavior of the SiC nanowires. The current results suggest a simple technique for synthesizing Al-doped SiC nanomaterials in a controlled manner, which are promising for applications in optical and electronic nanodevices.

  17. Electron-assisted magnetization tunneling in single spin systems

    Science.gov (United States)

    Balashov, Timofey; Karlewski, Christian; Märkl, Tobias; Schön, Gerd; Wulfhekel, Wulf

    2018-01-01

    Magnetic excitations of single atoms on surfaces have been widely studied experimentally in the past decade. Lately, systems with unprecedented magnetic stability started to emerge. Here, we present a general theoretical investigation of the stability of rare-earth magnetic atoms exposed to crystal or ligand fields of various symmetry and to exchange scattering with an electron bath. By analyzing the properties of the atomic wave function, we show that certain combinations of symmetry and total angular momentum are inherently stable against first or even higher-order interactions with electrons. Further, we investigate the effect of an external magnetic field on the magnetic stability.

  18. Single InAs/GaSb nanowire low-power CMOS inverter.

    Science.gov (United States)

    Dey, Anil W; Svensson, Johannes; Borg, B Mattias; Ek, Martin; Wernersson, Lars-Erik

    2012-11-14

    III-V semiconductors have so far predominately been employed for n-type transistors in high-frequency applications. This development is based on the advantageous transport properties and the large variety of heterostructure combinations in the family of III-V semiconductors. In contrast, reports on p-type devices with high hole mobility suitable for complementary metal-oxide-semiconductor (CMOS) circuits for low-power operation are scarce. In addition, the difficulty to integrate both n- and p-type devices on the same substrate without the use of complex buffer layers has hampered the development of III-V based digital logic. Here, inverters fabricated from single n-InAs/p-GaSb heterostructure nanowires are demonstrated in a simple processing scheme. Using undoped segments and aggressively scaled high-κ dielectric, enhancement mode operation suitable for digital logic is obtained for both types of transistors. State-of-the-art on- and off-state characteristics are obtained and the individual long-channel n- and p-type transistors exhibit minimum subthreshold swings of SS = 98 mV/dec and SS = 400 mV/dec, respectively, at V(ds) = 0.5 V. Inverter characteristics display a full signal swing and maximum gain of 10.5 with a small device-to-device variability. Complete inversion is measured at low frequencies although large parasitic capacitances deform the waveform at higher frequencies.

  19. Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices

    Science.gov (United States)

    Aurang, Pantea; Turan, Rasit; Emrah Unalan, Husnu

    2017-10-01

    Reducing silicon (Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire (NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 ± 0.2 μm upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% ± 5% in photovoltaic conversion efficiency.

  20. Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices.

    Science.gov (United States)

    Aurang, Pantea; Turan, Rasit; Unalan, Husnu Emrah

    2017-10-06

    Reducing silicon (Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire (NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 ± 0.2 μm upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% ± 5% in photovoltaic conversion efficiency.

  1. 1.55 µm emission from a single III-nitride top-down and site-controlled nanowire quantum disk

    Science.gov (United States)

    Chen, Qiming; Yan, Changling; Qu, Yi

    2017-07-01

    InN/InGaN single quantum well (SQW) was fabricated on 100 nm GaN buffer layer which was deposited on GaN template by plasma assisted molecular beam epitaxy (PA-MBE). The In composition and the surface morphology were measured by x-ray diffusion (XRD) and atom force microscope (AFM), respectively. Afterwards, the sample was fabricated into site-controlled nanowires arrays by hot-embossing nano-imprint lithography (HE-NIL) and ultraviolet nanoimprint lithography (UV-NIL). The nanowires were uniform along the c-axis and aligned periodically as presented by scanning electron microscope (SEM). The single nanowire showed disk-in-a-wire structure by high angle annular dark field (HAADF) and an In-rich or Ga deficient region was observed by energy dispersive x-ray spectrum (EDXS). The optical properties of the SQW film and single nanowire were measured using micro photoluminescence (µ-PL) spectroscopy. The stimulating light wavelength was 632.8 nm which was emitted from a He-Ne laser and the detector was a liquid nitrogen cooled InGaAs detector. A blue peak shift from the film material to the nanowire was observed. This was due to the quantum confinement Stark Effect. More importantly, the 1.55 µm emission was given from the single disk-in-a-wire structure at room temperature. We believe the arrays of such nanowires may be useful for quantum communication in the future.

  2. Wurtzite ZnSe nanowires: growth, photoluminescence, and single-wire Raman properties

    Energy Technology Data Exchange (ETDEWEB)

    Shan, C X; Liu, Z; Zhang, X T; Wong, C C; Hark, S K [Department of Physics, Chinese University of Hong Kong, Shatin, Hong Kong (China)

    2006-11-28

    Wurtzite ZnSe nanowires were prepared on GaAs substrates in a metal-organic chemical vapour deposition system. Electron microscopy shows that they are smooth and uniform in size. Both transmission electron microscopy and x-ray diffraction reveal the wurtzite structure of the nanowires, which grows along the <0001> direction. Raman scattering studies on individual nanowires were performed in the back-scattering geometry at room temperature. Besides the commonly observed longitudinal and transverse optical phonon modes, a possible surface mode located at 233 cm{sup -1} is also observed in the Raman spectrum. A peak located at 2.841 eV was clearly observed in the photoluminescence spectra of the nanowires, which can be assigned to near band edge emissions of wurtzite ZnSe.

  3. Wurtzite ZnSe nanowires: growth, photoluminescence, and single-wire Raman properties.

    Science.gov (United States)

    Shan, C X; Liu, Z; Zhang, X T; Wong, C C; Hark, S K

    2006-11-28

    Wurtzite ZnSe nanowires were prepared on GaAs substrates in a metal-organic chemical vapour deposition system. Electron microscopy shows that they are smooth and uniform in size. Both transmission electron microscopy and x-ray diffraction reveal the wurtzite structure of the nanowires, which grows along the [Formula: see text] direction. Raman scattering studies on individual nanowires were performed in the back-scattering geometry at room temperature. Besides the commonly observed longitudinal and transverse optical phonon modes, a possible surface mode located at 233 cm(-1) is also observed in the Raman spectrum. A peak located at 2.841 eV was clearly observed in the photoluminescence spectra of the nanowires, which can be assigned to near band edge emissions of wurtzite ZnSe.

  4. Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering

    International Nuclear Information System (INIS)

    Khanal, D. R.; Levander, A. X.; Wu, J.; Yu, K. M.; Liliental-Weber, Z.; Walukiewicz, W.; Grandal, J.; Sanchez-Garcia, M. A.; Calleja, E.

    2011-01-01

    We demonstrate the isolation of two free carrier scattering mechanisms as a function of radial band bending in InN nanowires via universal mobility analysis, where effective carrier mobility is measured as a function of effective electric field in a nanowire field-effect transistor. Our results show that Coulomb scattering limits effective mobility at most effective fields, while surface roughness scattering only limits mobility under very high internal electric fields. High-energy α particle irradiation is used to vary the ionized donor concentration, and the observed decrease in mobility and increase in donor concentration are compared to Hall effect results of high-quality InN thin films. Our results show that for nanowires with relatively high doping and large diameters, controlling Coulomb scattering from ionized dopants should be given precedence over surface engineering when seeking to maximize nanowire mobility.

  5. A new approach to fabricating magnetic multilayer nanowires by modifying the ac pulse electrodeposition in a single bath

    Science.gov (United States)

    Ramazani, A.; Ghaffari, M.; Almasi Kashi, M.; Kheiry, F.; Eghbal, F.

    2014-09-01

    This work focused on the development of a new single bath technique to fabricate compositionally modulated Co/Cu, CoFe/Cu and Fe/Cu multilayer nanowires in nanoporous alumina templates prepared by the hard and mild anodization methods. The approach was based on ac pulse electrodeposition, employing successive cycles of alternating continuous and pulsed sine waves with designated off-time between pulses and reduction/oxidation voltages. The substantial control over the composition of each segment was achieved by simultaneous change in the off-time between pulses and the ac deposition voltage. The multilayered nature of the nanostructures was substantiated by transmission electron microscopy. Each layer thickness was also nearly uniform, and could be readily adjusted by the number of pulses. The proposed method facilitates the fabrication of various multilayer nanowires in a single bath, which speeds up the fabrication process and is desirable for their application in nanodevices and nanoelectronics. The effect of magnetic layer thickness on the magnetic behaviour was also studied. Decreasing the magnetic layer thickness caused the parallel coercivity and squareness values to approach those measured in the perpendicular direction. The magnetic easy axis changed from parallel to nearly perpendicular to the nanowire axis, depending on the magnetic layers' aspect ratio and shape anisotropies.

  6. Seed-mediated shape evolution of gold nanomaterials: from spherical nanoparticles to polycrystalline nanochains and single-crystalline nanowires

    International Nuclear Information System (INIS)

    Qiu Penghe; Mao Chuanbin

    2009-01-01

    We studied the kinetics of the reduction of a gold precursor (HAuCl 4 ) and the effect of the molar ratio (R) of sodium citrate, which was introduced from a seed solution, and the gold precursor on the shape evolution of gold nanomaterials in the presence of preformed 13 nm gold nanoparticles as seeds. The reduction of the gold precursor by sodium citrate was accelerated due to the presence of gold seeds. Nearly single-crystalline gold nanowires were formed at a very low R value (R = 0.16) in the presence of the seeds as a result of the oriented attachment of the growing gold nanoparticles. At a higher R value (R = 0.33), gold nanochains were formed due to the non-oriented attachment of gold nanoparticles. At a much higher R value (R = 1.32), only larger spherical gold nanoparticles grown from the seeds were found. In the absence of gold seeds, no single-crystalline nanowires were formed at the same R value. Our results indicate that the formation of the 1D nanostructures (nanochains and nanowires) at low R values is due to the attachment of gold nanoparticles along one direction, which is driven by the surface energy reduction, nanoparticle attraction, and dipole-dipole interaction between adjacent nanoparticles.

  7. Strain distribution in single, suspended germanium nanowires studied using nanofocused x-rays

    DEFF Research Database (Denmark)

    Keplinger, Mario; Grifone, Raphael; Greil, Johannes

    2016-01-01

    illumination positions along the nanowire length results in corresponding strain components as well as the nanowire's tilting and bending. By using these findings we determined the complete strain state with the help of finite element modelling. The resulting information provides us with the possibility...... of evaluating the validity of the strain investigations following from Raman scattering experiments which are based on the assumption of purely uniaxial strain....

  8. Performance and Characterization of a Modular Superconducting Nanowire Single Photon Detector System for Space-to-Earth Optical Communications Links

    Science.gov (United States)

    Vyhnalek, Brian E.; Tedder, Sarah A.; Nappier, Jennifer M.

    2018-01-01

    Space-to-ground photon-counting optical communication links supporting high data rates over large distances require enhanced ground receiver sensitivity in order to reduce the mass and power burden on the spacecraft transmitter. Superconducting nanowire single-photon detectors (SNSPDs) have been demonstrated to offer superior performance in detection efficiency, timing resolution, and count rates over semiconductor photodetectors, and are a suitable technology for high photon efficiency links. Recently photon detectors based on superconducting nanowires have become commercially available, and we have assessed the characteristics and performance of one such commercial system as a candidate for potential utilization in ground receiver designs. The SNSPD system features independent channels which can be added modularly, and we analyze the scalability of the system to support different data rates, as well as consider coupling concepts and issues as the number of channels increases.

  9. Spin quantum tunneling via entangled states in a dimer of exchange coupled single-molecule magnets

    Science.gov (United States)

    Tiron, R.; Wernsdorfer, W.; Aliaga-Alcalde, N.; Foguet-Albiol, D.; Christou, G.

    2004-03-01

    A new family of supramolecular, antiferromagnetically exchange-coupled dimers of single-molecule magnets (SMMs) has recently been reported [W. Wernsdorfer, N. Aliaga-Alcalde, D.N. Hendrickson, and G. Christou, Nature 416, 406 (2002)]. Each SMM acts as a bias on its neighbor, shifting the quantum tunneling resonances of the individual SMMs. Hysteresis loop measurements on a single crystal of SMM-dimers have now established quantum tunneling of the magnetization via entangled states of the dimer. This shows that the dimer really does behave as a quantum-mechanically coupled dimer. The transitions are well separated, suggesting long coherence times compared to the time scale of the energy splitting. This result is of great importance if such systems are to be used for quantum computing. It also allows the measurement of the longitudinal and transverse superexchange coupling constants [Phys. Rev. Lett. 91, 227203 (2003)].

  10. Stoichiometry controlled, single-crystalline Bi{sub 2}Te{sub 3} nanowires for transport in the basal plane

    Energy Technology Data Exchange (ETDEWEB)

    Peranio, Nicola; Eibl, Oliver [Institut fuer Angewandte Physik, Eberhard Karls Universitaet Tuebingen (Germany); Leister, Eva; Toellner, William; Nielsch, Kornelius [Institut fuer Angewandte Physik, Universitaet Hamburg (Germany)

    2012-01-11

    Thermoelectric Bi{sub 2}Te{sub 3} based bulk materials are widely used for solid-state refrigeration and power-generation at room temperature. For low-dimensional and nanostructured thermoelectric materials an increase of the thermoelectric figure of merit ZT is predicted due to quantum confinement and phonon scattering at interfaces. Therefore, the fabrication of Bi{sub 2}Te{sub 3} nanowires, thin films, and nanostructured bulk materials has become an important and active field of research. Stoichiometric Bi{sub 2}Te{sub 3} nanowires with diameters of 50-80 nm and a length of 56 {mu}m are grown by a potential-pulsed electrochemical deposition in a nanostructured Al{sub 2}O{sub 3} matrix. By transmission electron microscopy (TEM), dark-field images together with electron diffraction reveal single-crystalline wires, no grain boundaries can be detected. The stoichiometry control of the wires by high-accuracy, quantitative energy-dispersive X-ray spectroscopy (EDX) in the TEM instrument is of paramount importance for successfully implementing the growth technology. Combined electron diffraction and EDX spectroscopy in the TEM unambiguously prove the correct crystal structure and stoichiometry of the Bi{sub 2}Te{sub 3} nanowires. X-ray and electron diffraction reveal growth along the [110] and [210] directions and the c axis of the Bi{sub 2}Te{sub 3} structure lies perpendicular to the wire axis. For the first time single crystalline, stoichiometric Bi{sub 2}Te{sub 3} nanowires are grown that allow transport in the basal plane without being affected by grain boundaries. (Copyright copyright 2012 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  11. X-band singly degenerate parametric amplification in a Josephson tunnel junction

    DEFF Research Database (Denmark)

    Mygind, Jesper; Pedersen, Niels Falsig; Sørensen, O. H.

    1978-01-01

    Preliminary measurements on a (quasi-) degenerate parametric amplifier using a single Josephson tunnel junction as the active element is reported. The pump frequency is at 18 GHz and the signal and idler frequencies are both at about 9 GHz. A power gain of 16 dB in a 4-MHz 3-dB bandwidth is achie...... is achieved at the top of the cryostat. Applied Physics Letters is copyrighted by The American Institute of Physics....

  12. Thermoelectric-induced spin currents in single-molecule magnet tunnel junctions

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang; Wang, Ruiqiang; Wang, Baigeng; Xing, D. Y.

    2010-12-01

    A molecular spin-current generator is proposed, which consists of a single-molecule magnet (SMM) coupled to two normal metal electrodes with temperature gradient. It is shown that this tunneling junction can generate a highly spin-polarized current by thermoelectric effects, whose flowing direction and spin polarization can be changed by adjusting the gate voltage applied to the SMM. This device can be realized with current technologies and may have practical use in spintronics and quantum information.

  13. Photon-assisted tunneling in a Fe-8 single-molecule magnet

    OpenAIRE

    Sorace, L.; Wernsdorfer, W.; Thirion, C.; Barra, A. L.; Pacchioni, M.; Mailly, D.; Barbara, B.

    2003-01-01

    The low temperature spin dynamics of a Fe8 Single-Molecule Magnet was studied under circularly polarized electromagnetic radiation allowing us to establish clearly photon-assisted tunneling. This effect, while linear at low power, becomes highly non-linear above a relatively low power threshold. This non-linearity is attributed to the nature of the coupling of the sample to the thermostat.These results are of great importance if such systems are to be used as quantum computers.

  14. Quantum Transport and Nano Angle-resolved Photoemission Spectroscopy on the Topological Surface States of Single Sb2Te3 Nanowires

    Science.gov (United States)

    Arango, Yulieth C.; Huang, Liubing; Chen, Chaoyu; Avila, Jose; Asensio, Maria C.; Grützmacher, Detlev; Lüth, Hans; Lu, Jia Grace; Schäpers, Thomas

    2016-01-01

    We report on low-temperature transport and electronic band structure of p-type Sb2Te3 nanowires, grown by chemical vapor deposition. Magnetoresistance measurements unravel quantum interference phenomena, which depend on the cross-sectional dimensions of the nanowires. The observation of periodic Aharonov-Bohm-type oscillations is attributed to transport in topologically protected surface states in the Sb2Te3 nanowires. The study of universal conductance fluctuations demonstrates coherent transport along the Aharonov-Bohm paths encircling the rectangular cross-section of the nanowires. We use nanoscale angle-resolved photoemission spectroscopy on single nanowires (nano-ARPES) to provide direct experimental evidence on the nontrivial topological character of those surface states. The compiled study of the bandstructure and the magnetotransport response unambiguosly points out the presence of topologically protected surface states in the nanowires and their substantial contribution to the quantum transport effects, as well as the hole doping and Fermi velocity among other key issues. The results are consistent with the theoretical description of quantum transport in intrinsically doped quasi-one-dimensional topological insulator nanowires. PMID:27581169

  15. Anatomic Double Bundle single tunnel Foreign Material Free ACL-Reconstruction - a technical note.

    Science.gov (United States)

    Felmet, Gernot

    2011-10-01

    The anterior cruciate ligament (ACL) consists of two bundles, the anteromedial (AM) and posterolateral bundle (PM). Double bundle reconstructions appear to give better rotational stability. The usual technique is to make two tunnels in the femur and two in the tibia. This is difficult and in small knees may not even be possible. We have developed a foreign material free press fit fixation for double bundle ACL reconstruction using a single femoral tunnel ((R)). This is based on the ALL PRESS FIT ACL reconstruction. It is suitable for the most common medium and, otherwise difficult, small sizes of knees. Using diamond edged wet grinding hollow reamers, bone cylinders in different diameters are harvested from the implantation tunnels of the tibia and femur and used for the press fit fixation. Using the press fit technique the graft is first fixed in tibia. It is then similarly fixed under tension in the femoral side with the knee in 120 degree flexion. This is called Bottom To Top Fixation (BTT). On extending the knee the graft tension is self adapting. Depending on the size of the individual knee, the diameter of the femoral bone plug is varied from 8 to 13 mm to achieve an anatomic spread with a double bundle-like insertion. The tibia tunnel can be applied with two 7 or 8 mm diameter tunnels overlapping to a semi oval tunnel between 10 to 13 mm. Since May 2003 we have carried out ACL-reconstructions with Hamstring grafts without foreign material using the ALL PRESS FIT technique. Initially, an 8 mm press fit fixation was used proximally with good results. Since April 2008, the range of diameters was increased up to 13 mm. The results of the Lachman tests have been good to excellent. Results of the Pivot shift test suggested more stability with femoral broader diameters of 9,5 to 13 mm. The foreign material free fixation of ham-string in the ALL PRESS FIT Bottom To Top Fixation is a successful method for ACL Reconstruction. The Diamond Instruments and tubed guiding

  16. Single-molecule spectroscopy of amino acids and peptides by recognition tunnelling

    Science.gov (United States)

    Zhao, Yanan; Ashcroft, Brian; Zhang, Peiming; Liu, Hao; Sen, Suman; Song, Weisi; Im, Jongone; Gyarfas, Brett; Manna, Saikat; Biswas, Sovan; Borges, Chad; Lindsay, Stuart

    2014-06-01

    The human proteome has millions of protein variants due to alternative RNA splicing and post-translational modifications, and variants that are related to diseases are frequently present in minute concentrations. For DNA and RNA, low concentrations can be amplified using the polymerase chain reaction, but there is no such reaction for proteins. Therefore, the development of single-molecule protein sequencing is a critical step in the search for protein biomarkers. Here, we show that single amino acids can be identified by trapping the molecules between two electrodes that are coated with a layer of recognition molecules, then measuring the electron tunnelling current across the junction. A given molecule can bind in more than one way in the junction, and we therefore use a machine-learning algorithm to distinguish between the sets of electronic `fingerprints' associated with each binding motif. With this recognition tunnelling technique, we are able to identify D and L enantiomers, a methylated amino acid, isobaric isomers and short peptides. The results suggest that direct electronic sequencing of single proteins could be possible by sequentially measuring the products of processive exopeptidase digestion, or by using a molecular motor to pull proteins through a tunnel junction integrated with a nanopore.

  17. Inelastic tunneling of electrons through a quantum dot with an embedded single molecular magnet

    Science.gov (United States)

    Chang, Bo; Liang, J.-Q.

    2010-06-01

    We report a theoretical analysis of electron transport through a quantum dot with an embedded biaxial single-molecule magnet (SMM) based on mapping of the many-body interaction-system onto a one-body problem by means of the non-equilibrium Green function technique. It is found that the conducting current exhibits a stepwise behavior and the nonlinear differential conductance displays additional peaks with variation of the sweeping speed and the magnitude of magnetic field. This observation can be interpreted by the interaction of electron-spin with the SMM and the quantum tunneling of magnetization. The inelastic conductance and the corresponding tunneling processes are investigated with normal as well as ferromagnetic electrodes. In the case of ferromagnetic configuration, the coupling to the SMM leads to an asymmetric tunneling magnetoresistance (TMR), which can be enhanced or suppressed greatly in certain regions. Moreover, a sudden TMR-switch with the variation of magnetic field is observed, which is seen to be caused by the inelastic tunneling.

  18. Inelastic tunneling of electrons through a quantum dot with an embedded single molecular magnet

    Energy Technology Data Exchange (ETDEWEB)

    Chang Bo [Institute of Theoretical Physics and Department of Physics, Shanxi University, Taiyuan, Shanxi 030006 (China); Liang, J.-Q., E-mail: jqliang@sxu.edu.c [Institute of Theoretical Physics and Department of Physics, Shanxi University, Taiyuan, Shanxi 030006 (China)

    2010-06-28

    We report a theoretical analysis of electron transport through a quantum dot with an embedded biaxial single-molecule magnet (SMM) based on mapping of the many-body interaction-system onto a one-body problem by means of the non-equilibrium Green function technique. It is found that the conducting current exhibits a stepwise behavior and the nonlinear differential conductance displays additional peaks with variation of the sweeping speed and the magnitude of magnetic field. This observation can be interpreted by the interaction of electron-spin with the SMM and the quantum tunneling of magnetization. The inelastic conductance and the corresponding tunneling processes are investigated with normal as well as ferromagnetic electrodes. In the case of ferromagnetic configuration, the coupling to the SMM leads to an asymmetric tunneling magnetoresistance (TMR), which can be enhanced or suppressed greatly in certain regions. Moreover, a sudden TMR-switch with the variation of magnetic field is observed, which is seen to be caused by the inelastic tunneling.

  19. Observation of layered antiferromagnetism in self-assembled parallel NiSi nanowire arrays on Si(110) by spin-polarized scanning tunneling spectromicroscopy

    Science.gov (United States)

    Hong, Ie-Hong; Hsu, Hsin-Zan

    2018-03-01

    The layered antiferromagnetism of parallel nanowire (NW) arrays self-assembled on Si(110) have been observed at room temperature by direct imaging of both the topographies and magnetic domains using spin-polarized scanning tunneling microscopy/spectroscopy (SP-STM/STS). The topographic STM images reveal that the self-assembled unidirectional and parallel NiSi NWs grow into the Si(110) substrate along the [\\bar{1}10] direction (i.e. the endotaxial growth) and exhibit multiple-layer growth. The spatially-resolved SP-STS maps show that these parallel NiSi NWs of different heights produce two opposite magnetic domains, depending on the heights of either even or odd layers in the layer stack of the NiSi NWs. This layer-wise antiferromagnetic structure can be attributed to an antiferromagnetic interlayer exchange coupling between the adjacent layers in the multiple-layer NiSi NW with a B2 (CsCl-type) crystal structure. Such an endotaxial heterostructure of parallel magnetic NiSi NW arrays with a layered antiferromagnetic ordering in Si(110) provides a new and important perspective for the development of novel Si-based spintronic nanodevices.

  20. Modeling and performance analysis of GaN nanowire field-effect transistors and band-to-band tunneling field-effect transistors

    Science.gov (United States)

    Khayer, M. Abul; Lake, Roger K.

    2010-11-01

    The real and imaginary bandstructures of deeply scaled GaN nanowire (NW) field-effect transistors (FETs) are calculated with an eight-band k ṡp model. Analysis of the transport properties of both GaN NW FETs and NW band-to-band tunneling FETs (TFETs) is presented. Deeply scaled n-type GaN NW FETs operate in the classical capacitance limit (CCL) in stead of operating in the quantum capacitance limit. This is a result of the high electron effective mass and high density of states. We discuss how the CCL operation of these devices affect the device performance. For the GaN NW FETs, within a source Fermi level of 0.2 eV, the current density varies from 5 to 8.5 A/mm. For the GaN TFETs, we present analysis on the effect of NW diameter on the on-currents, the off-currents, and the required electric fields. We show that a drive current of ˜0.05 A/mm can be achieved for the GaN NW TFETs. These devices show potential for high-speed and high-power applications.

  1. Enhanced Electrochemical Oxidation of p-Nitrophenol Using Single-Walled Carbon Nanotubes/Silver Nanowires Hybrids Modified Electrodes.

    Science.gov (United States)

    Jiang, Yunfang; Liu, Xinghua; Li, Jing; Zhou, Lei; Yang, Xiaoying; Huang, Yi

    2015-08-01

    The electrochemical oxidation of p-nitrophenol (p-Np) has been studied on glassy carbon electrode modified with the single-walled carbon nanotubes/silver nanowires hybrids (SWNTs-Ag) by using cyclic and differential pulse voltammetry. p-Np is irreversibly oxidized at +0.88 V (vs. the Ag/AgCl) in PBS solutions of pH 7.4. The modified electrodes display the detection sensitivity of 0.0212 µA/µM with an unusually wide linear response of 5-1700 µM (R2 = 0.998) and the detection limit of 1 µM. The current response of SWNTs-Ag modified electrode to p-Np is better than that of SWNTs or Ag nanowires modified electrode under the same concentration. Combining the adsorption ability of SWNTs and the conductivity of SWNTs and Ag nanowires, the detection performance of SWNTs-Ag modified electrode to p-Np was greatly improved.

  2. Semiconductor Nanowires from Materials Science and Device Physics Perspectives

    Science.gov (United States)

    Samuelson, Lars

    2005-03-01

    Realization of extremely down-scaled devices gives tough challenges related to technology and materials science. One reason for the concern is that top-down fabricated nano-devices tend to have their properties dominated by process-induced damage, rendering ultra-small devices not so useful. Alternatively, bottom-up fabrication methods may allow dimensions on the scale even below 10 nm, still with superb device properties. I will in this talk describe our research on catalytically induced growth of semiconductor nanowires. Our method uses catalytic gold nanoparticles, allowing tight control of diameter as well as position of where the nanowire grows, with our work completely focused on epitaxially nucleated nanowires in which the nanowire structure can be seen as a coherent, monolithic extension of the crystalline substrate material. One of the most important achievements in this field of research is the realization of atomically abrupt heterostructures within nanowires, in which the material composition can be altered within only one or a few monolayers, thus allowing 1D heterostructure devices to be realized. This has allowed a variety of quantum devices to be realized, such as single-electron transistors, resonant tunneling devices as well as memory storage devices. A related recent field of progress has been the realization of ideally nucleated III-V nanowires on Si substrates, cases where we have also reported functioning III-V heterostructure device structures on Si. All of these device related challenges evolve from an improved understanding of the materials science involved in nucleation of nanowires, in altering of composition of the growing nanowire, in control of the growth direction etc. I will give examples of these materials science issues and will especially dwell on the opportunities to form new kinds of materials, e.g. as 3D complex nanowire structures, resembling nanotrees or nanoforests.

  3. Low-noise parametric amplification at 35 GHz in a single Josephson tunnel junction

    DEFF Research Database (Denmark)

    Mygind, Jesper; Pedersen, Niels Falsig; Sørensen, O. H.

    1979-01-01

    Parametric amplification at 35 GHz has been obtained using a single Josephson tunnel junction as the active element. The amplifier was operated in the singly quasidegenerate mode with a pump frequency at 70 GHz. The noise temperature was measured and found correlated with the gain. At the highest...... gain achieved, 11.6 dB, the noise temperature was 400 K. The noise temperature was reduced considerably by decreasing the gain. At 8 and 4 dB we found 165±25 K and 50±30 K, respectively. Applied Physics Letters is copyrighted by The American Institute of Physics....

  4. Low-noise parametric amplification at 35 GHz in a single Josephson tunnel junction

    International Nuclear Information System (INIS)

    Mygind, J.; Pedersen, N.F.; Soerensen, O.H.; Dueholm, B.; Levinsen, M.T.

    1979-01-01

    Parametric amplification at 35 GHz has been obtained using a single Josephson tunnel junction as the active element. The amplifier was operated in the singly quasidegenerate mode with a pump frequency at 70 GHz. The noise temperature was measured and found correlated with the gain. At the highest gain achieved, 11.6 dB, the noise temperature was 400 K. The noise temperature was reduced considerably by decreasing the gain. At 8 and 4 dB we found 165 +- 25 K and 50 +- 30 K, respectively

  5. Atomic Migration Induced Crystal Structure Transformation and Core-Centered Phase Transition in Single Crystal Ge2Sb2Te5Nanowires.

    Science.gov (United States)

    Lee, Jun-Young; Kim, Jeong-Hyeon; Jeon, Deok-Jin; Han, Jaehyun; Yeo, Jong-Souk

    2016-10-12

    A phase change nanowire holds a promise for nonvolatile memory applications, but its transition mechanism has remained unclear due to the analytical difficulties at atomic resolution. Here we obtain a deeper understanding on the phase transition of a single crystalline Ge 2 Sb 2 Te 5 nanowire (GST NW) using atomic scale imaging, diffraction, and chemical analysis. Our cross-sectional analysis has shown that the as-grown hexagonal close-packed structure of the single crystal GST NW transforms to a metastable face-centered cubic structure due to the atomic migration to the pre-existing vacancy layers in the hcp structure going through iterative electrical switching. We call this crystal structure transformation "metastabilization", which is also confirmed by the increase of set-resistance during the switching operation. For the set to reset transition between crystalline and amorphous phases, high-resolution imaging indicates that the longitudinal center of the nanowire mainly undergoes phase transition. According to the atomic scale analysis of the GST NW after repeated electrical switching, partial crystallites are distributed around the core-centered amorphous region of the nanowire where atomic migration is mainly induced, thus potentially leading to low power electrical switching. These results provide a novel understanding of phase change nanowires, and can be applied to enhance the design of nanowire phase change memory devices for improved electrical performance.

  6. Manifestation of spin selection rules on the quantum tunneling of magnetization in a single-molecule magnet.

    Science.gov (United States)

    Henderson, J J; Koo, C; Feng, P L; del Barco, E; Hill, S; Tupitsyn, I S; Stamp, P C E; Hendrickson, D N

    2009-07-03

    We present low temperature magnetometry measurements on a new Mn3 single-molecule magnet in which the quantum tunneling of magnetization (QTM) displays clear evidence for quantum mechanical selection rules. A QTM resonance appearing only at high temperatures demonstrates tunneling between excited states with spin projections differing by a multiple of three. This is dictated by the C3 molecular symmetry, which forbids pure tunneling from the lowest metastable state. Transverse field resonances are understood by correctly orienting the Jahn-Teller axes of the individual manganese ions and including transverse dipolar fields. These factors are likely to be important for QTM in all single-molecule magnets.

  7. Effect of single Abrikosov vortices on the properties of Josephson tunnel junctions

    International Nuclear Information System (INIS)

    Golubov, A.A.; Kupriyanov, M.Yu.

    1987-01-01

    The effect of single Abrikosov vortices, trapped in the electrodes of a Josephson tunnel junction perpendicularly to the junction surface, on the tunnel current through the junction is studied within the framework of the microscopic theory. The current-voltage characteristic and the critical junction current I c are calculated for temperatures 0 c . It is shown that if the vortices at the junction are misaligned, singularities on the current-voltage characteristic appear at eV Δ (T), and in some cases the magnitude of suppression of I c may be of the order of magnitude of I c itself. The temperature dependence of the critical current is calculated for the case of one of the electrodes being a two-dimensional superconducting film in which the creation of opposite sign vortex pairs is significant

  8. A variable-temperature scanning tunneling microscope capable of single-molecule vibrational spectroscopy

    International Nuclear Information System (INIS)

    Stipe, B.C.; Rezaei, M.A.; Ho, W.

    1999-01-01

    The design and performance of a variable-temperature scanning tunneling microscope (STM) is presented. The microscope operates from 8 to 350 K in ultrahigh vacuum. The thermally compensated STM is suspended by springs from the cold tip of a continuous flow cryostat and is completely surrounded by two radiation shields. The design allows for in situ dosing and irradiation of the sample as well as for the exchange of samples and STM tips. With the STM feedback loop off, the drift of the tip-sample spacing is approximately 0.001 Angstrom/min at 8 K. It is demonstrated that the STM is well-suited for the study of atomic-scale chemistry over a wide temperature range, for atomic-scale manipulation, and for single-molecule inelastic electron tunneling spectroscopy (IETS). copyright 1999 American Institute of Physics

  9. Growth and structural characterization of III-V semiconductor nanowires

    OpenAIRE

    Rieger, Torsten

    2015-01-01

    In this thesis, the growth and structural properties of III-V semiconductor nanowires and nanowire heterostructures are studied. These nanowires represent structures suitable for both fundamental physics and applications in electronic devices such as (tunnel) field effect transistors. The III-V nanowires are grown with molecular beam epitaxy, high κ dielectric layers are deposited conformally around the nanowires by atomic layer deposition. The morphological and structural characteristics of ...

  10. Fabrication of metallic single electron transistors featuring plasma enhanced atomic layer deposition of tunnel barriers

    Science.gov (United States)

    Karbasian, Golnaz

    The continuing increase of the device density in integrated circuits (ICs) gives rise to the high level of power that is dissipated per unit area and consequently a high temperature in the circuits. Since temperature affects the performance and reliability of the circuits, minimization of the energy consumption in logic devices is now the center of attention. According to the International Technology Roadmaps for Semiconductors (ITRS), single electron transistors (SETs) hold the promise of achieving the lowest power of any known logic device, as low as 1x10-18 J per switching event. Moreover, SETs are the most sensitive electrometers to date, and are capable of detecting a fraction of an electron charge. Despite their low power consumption and high sensitivity for charge detection, room temperature operation of these devices is quite challenging mainly due to lithographical constraints in fabricating structures with the required dimensions of less than 10 nm. Silicon based SETs have been reported to operate at room temperature. However, they all suffer from significant variation in batch-to-batch performance, low fabrication yield, and temperature-dependent tunnel barrier height. In this project, we explored the fabrication of SETs featuring metal-insulator-metal (MIM) tunnel junctions. While Si-based SETs suffer from undesirable effect of dopants that result in irregularities in the device behavior, in metal-based SETs the device components (tunnel barrier, island, and the leads) are well-defined. Therefore, metal SETs are potentially more predictable in behavior, making them easier to incorporate into circuits, and easier to check against theoretical models. Here, the proposed fabrication method takes advantage of unique properties of chemical mechanical polishing (CMP) and plasma enhanced atomic layer deposition (PEALD). Chemical mechanical polishing provides a path for tuning the dimensions of the tunnel junctions, surpassing the limits imposed by electron beam

  11. Effects of band-tails on the subthreshold characteristics of nanowire band-to-band tunneling transistors

    Science.gov (United States)

    Khayer, M. Abul; Lake, Roger K.

    2011-10-01

    High source doping is required to support the high electric fields necessary to provide sufficient drive currents in interband tunnel field effect transistors (TFETs). High doping is associated with band-tails in the density of states that decay exponentially into the bandgap with decay constants that can be comparable to the room temperature thermal energy kBT. This compromises the core operational principal of a TFET of a hard energy cut-off to the injected channel carrier distribution provided by the source valence band edge. If the band-tails are limited to the source region, they have minimal effect for short channels ≤10 nm, since the leakage current is dominated by direct, coherent tunneling through the channel. For longer 20 nm channels, source band-tails can double the inverse subthreshold slope but still leave it below the ideal 60 mV/decade value with on-off current ratios greater than 106 using a supply voltage of 0.4 V. Band-tails both in the source and channel are more detrimental for both 10 and 20 nm channels. On-off current ratios are reduced to ≥103 and ≥104 for the 10 nm and 20 nm channel devices, respectively.

  12. A highly efficient single-photon source based on a quantum dot in a photonic nanowire

    DEFF Research Database (Denmark)

    Claudon, Julien; Bleuse, Joel; Malik, Nitin Singh

    2010-01-01

    –4 or a semiconductor quantum dot5–7. Achieving a high extraction efficiency has long been recognized as a major issue, and both classical solutions8 and cavity quantum electrodynamics effects have been applied1,9–12. We adopt a different approach, based on an InAs quantum dot embedded in a GaAs photonic nanowire...

  13. Electrically pumped photonic nanowire single-photon source with an efficienty of 89%

    DEFF Research Database (Denmark)

    Gregersen, Niels; Nielsen, Torben Roland; Mørk, Jesper

    2011-01-01

    control and has high tolerance towards surface roughness. In the nanowire, a geometrical effect ensures good coupling between the quantum dot and the optical mode, and an inverted tapering section is introduced to adiabatically expand the mode waist and control the far field emission profile while...

  14. Synthesis and magneto-transport properties of single PEDOT/Ni and PEDOT/Ni30Fe70 core/shell nanowires

    International Nuclear Information System (INIS)

    Hangarter, Carlos M.; Rheem, Youngwoo; Stahovich, Thomas; Myung, Nosang V.

    2011-01-01

    Single polyethylenedioxythiophene (PEDOT) nanowires bridging pairs of electrodes were utilized as positive templates to create PEDOT/Ni and PEDOT/Ni 30 Fe 70 core/shell nanowires by electrodepositing ferromagnetic material (i.e., Ni and Ni 30 Fe 70 ) on the entire assembly, including both the electrodes and nanowire. The temperature dependence of the electrical resistance indicated that electrons are transported predominately through the ferromagnetic shell. The magnetoresistive (MR) behavior of the core/shell nanowires was investigated as a function of temperature, magnetic field orientation, shell thickness, and composition. The MR behavior of the PEDOT/Ni core/shell nanowires was anomalous for low applied magnetic fields, deviating from expected anisotropic magnetoresistance, with positive ΔR/R O values for all field orientations. PEDOT/Ni 30 Fe 70 core/shell nanowires displayed the opposite behavior, with negative ΔR/R O for both longitudinal and transverse field orientations. The origin of this magnetoresistive behavior is postulated to be a geometry induced domain wall effect.

  15. A detailed coupled-mode-space non-equilibrium Green's function simulation study of source-to-drain tunnelling in gate-all-around Si nanowire metal oxide semiconductor field effect transistors

    Science.gov (United States)

    Seoane, N.; Martinez, A.

    2013-09-01

    In this paper we present a 3D quantum transport simulation study of source-to-drain tunnelling in gate-all-around Si nanowire transistors by using the non-equilibrium Green's function approach. The impact of the channel length, device cross-section, and drain and gate applied biases on the source-to-drain tunnelling is examined in detail. The overall effect of tunnelling on the ID-VG characteristics is also investigated. Tunnelling in devices with channel lengths of 10 nm or less substantially enhances the off-current. This enhancement is more important at high drain biases and at larger cross-sections where the sub-threshold slope is substantially degraded. A less common effect is the increase in the on-current due to the tunnelling which contributes as much as 30% of the total on-current. This effect is almost independent of the cross-section, and it depends weakly on the studied channel lengths.

  16. Bias voltage induced resistance switching effect in single-molecule magnets’ tunneling junction

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang

    2014-09-01

    An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be ‘read out’ by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

  17. Bias voltage induced resistance switching effect in single-molecule magnets' tunneling junction.

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang

    2014-09-12

    An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be 'read out' by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

  18. Photon-assisted tunneling in a Fe8 single-molecule magnet

    Science.gov (United States)

    Sorace, L.; Wernsdorfer, W.; Thirion, C.; Barra, A.-L.; Pacchioni, M.; Mailly, D.; Barbara, B.

    2003-12-01

    The low-temperature spin dynamics of a Fe8 single-molecule magnet was studied under circularly polarized electromagnetic radiation allowing us to establish clearly photon-assisted tunneling. This effect, while linear at low power, becomes highly nonlinear above a relatively low-power threshold. Heating due to phonon emission, spin-spin interactions, and coherent emission/absorption of photons might lead to the observed nonlinearity. These results are of importance if such systems are to be used as quantum computers.

  19. Effects of microwave on spin tunneling in single-molecule magnets

    Science.gov (United States)

    Kim, Gwang-Hee; Kim, Tae-Suk

    2005-03-01

    We study theoretically the effects of the irradiated microwave on the magnetization in single-molecule magnets (SMMs) like V15 and Fe8. We find that the shape of magnetization depends on the microwave intensity as well as the microwave polarization. The applied microwave field enhances the tunneling probability. The linearly polarized microwaves induce the suppression of magnetization at both positive and negative magnetic fields. The circularly polarized microwaves are absorbed either at one direction of magnetic field or at both directions of magnetic fields, depending on the polarization directions with respect to the direction of longitudinal magnetic field. The generic features we found will be compared with the recent experimental results.

  20. Single-molecule electronics: Cooling individual vibrational modes by the tunneling current.

    Science.gov (United States)

    Lykkebo, Jacob; Romano, Giuseppe; Gagliardi, Alessio; Pecchia, Alessandro; Solomon, Gemma C

    2016-03-21

    Electronic devices composed of single molecules constitute the ultimate limit in the continued downscaling of electronic components. A key challenge for single-molecule electronics is to control the temperature of these junctions. Controlling heating and cooling effects in individual vibrational modes can, in principle, be utilized to increase stability of single-molecule junctions under bias, to pump energy into particular vibrational modes to perform current-induced reactions, or to increase the resolution in inelastic electron tunneling spectroscopy by controlling the life-times of phonons in a molecule by suppressing absorption and external dissipation processes. Under bias the current and the molecule exchange energy, which typically results in heating of the molecule. However, the opposite process is also possible, where energy is extracted from the molecule by the tunneling current. Designing a molecular "heat sink" where a particular vibrational mode funnels heat out of the molecule and into the leads would be very desirable. It is even possible to imagine how the vibrational energy of the other vibrational modes could be funneled into the "cooling mode," given the right molecular design. Previous efforts to understand heating and cooling mechanisms in single molecule junctions have primarily been concerned with small models, where it is unclear which molecular systems they correspond to. In this paper, our focus is on suppressing heating and obtaining current-induced cooling in certain vibrational modes. Strategies for cooling vibrational modes in single-molecule junctions are presented, together with atomistic calculations based on those strategies. Cooling and reduced heating are observed for two different cooling schemes in calculations of atomistic single-molecule junctions.

  1. Modeling of the I V characteristics of single and double barrier tunneling diodes using A k · p band model

    Science.gov (United States)

    Mui, D.; Patil, M.; Chen, J.; Agarwala, S.; Kumar, N. S.; Morkoc, H.

    1989-11-01

    We model the I-V characteristics of single and double barrier tunneling diodes using the complex band structure of the tunneling barrier obtained from a k · p band model. Band-bending is calculated by solving two coupled 1-D Poisson's equations with a classical potential in the accumulation region. The transfer matrix method is used for the calculation of the transmission probability of the tunneling electron whose complex k-vector is obtained from the band structure. An energy dependent density of states effective mass which is also calculated from the band structure is used. I-V characteristics for In 0.53Ga 0.47As/In 0.52Al 0.48As/In 0.53Ga 0.47As single and double barrier tunneling diodes obtained from this model agree quantitatively with experiment.

  2. Structure and electrical properties of p-type twin ZnTe nanowires

    Science.gov (United States)

    Li, Shanying; Jiang, Yang; Wu, Di; Wang, Binbin; Zhang, Yugang; Li, Junwei; Liu, Xinmei; Zhong, Honghai; Chen, Lei; Jie, Jiansheng

    2011-02-01

    Resonant tunneling is firstly found in twin p-type ZnTe nanowire field-effect transistors. The twin ZnTe nanowires are synthesized via the thermal evaporation process. X-ray diffraction and high-resolution transmission electron microscopy characterization indicate that the as-grown twin nanowire has a zinc-blende crystal structure with an integrated growth direction of [11-1]. The twin plane is (11-1) and the angle between the mirror symmetrical planes is 141°. The formation of twins is attributed to the surface tension from the eutectic liquid droplet. Field-effect transistors based on single ZnTe twin nanowire are constructed, the corresponding electrical measurements demonstrate that the twin nanowires have a p-type conductivity with a mobility ( μ h ) of 0.11 cm2 V-1 S-1, and a carrier concentration ( n h ) of 1.1×1017 cm-3. Significantly, the negative differential resistance with a peak-to-valley current ratio of about 1.3 is observed in p-type twin ZnTe nanowire field-effect transistors at room temperature. As the periodic barriers produced in the periodic twin interfaces can form multi-barrier and multi-well along one-dimensional direction. The multibarrier can be modulated under external electrical field. When the resonant condition is met, the space charge will be enhanced with the inherent feedback mechanism, and the resonant tunneling will occur.

  3. Single-dopant resonance in a single-electron transistor

    OpenAIRE

    Golovach, V. N.; Jehl, X.; Houzet, M.; Pierre, M.; Roche, B.; Sanquer, M.; Glazman, L. I.

    2011-01-01

    Single dopants in semiconductor nanostructures have been studied in great details recently as they are good candidates for quantum bits, provided they are coupled to a detector. Here we report coupling of a single As donor atom to a single-electron transistor (SET) in a silicon nanowire field-effect transistor. Both capacitive and tunnel coupling are achieved, the latter resulting in a dramatic increase of the conductance through the SET, by up to one order of magnitude. The experimental resu...

  4. Intense intrashell luminescence of Eu-doped single ZnO nanowires at room temperature by implantation created Eu-Oi complexes.

    Science.gov (United States)

    Geburt, Sebastian; Lorke, Michael; da Rosa, Andreia L; Frauenheim, Thomas; Röder, Robert; Voss, Tobias; Kaiser, Uwe; Heimbrodt, Wolfram; Ronning, Carsten

    2014-08-13

    Successful doping and excellent optical activation of Eu(3+) ions in ZnO nanowires were achieved by ion implantation. We identified and assigned the origin of the intra-4f luminescence of Eu(3+) ions in ZnO by first-principles calculations to Eu-Oi complexes, which are formed during the nonequilibrium ion implantation process and subsequent annealing at 700 °C in air. Our targeted defect engineering resulted in intense intrashell luminescence of single ZnO:Eu nanowires dominating the photoluminescence spectrum even at room temperature. The high intensity enabled us to study the luminescence of single ZnO nanowires in detail, their behavior as a function of excitation power, waveguiding properties, and the decay time of the transition.

  5. Coupling of a single nitrogen vacancy center to the gap modes of a dual silver nanowire system

    DEFF Research Database (Denmark)

    Kumar, Shailesh; Huck, A.; Andersen, U. L.

    2012-01-01

    We couple a nitrogen vacancy center in a diamond nano-crystal to a dual silver nanowire system by positioning the crystal in the gap between the two nanowires, and demonstrate a lifetime decrease of 8.3.......We couple a nitrogen vacancy center in a diamond nano-crystal to a dual silver nanowire system by positioning the crystal in the gap between the two nanowires, and demonstrate a lifetime decrease of 8.3....

  6. Topological Insulator Nanowires and Nanoribbons

    KAUST Repository

    Kong, Desheng

    2010-01-13

    Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi2Se5 nanomaterials with a variety of morphologies. The synthesis of Bi 2Se5 nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [1120] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with ∼ 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitais to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states. © 2010 American Chemical Society.

  7. Luminescence and electrical properties of single ZnO/MgO core/shell nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Grinblat, Gustavo; Comedi, David [Laboratorio de Física del Sólido, Dep. de Física, FACET, Universidad Nacional de Tucumán, Tucumán, and Consejo Nacional de Investigaciones Científicas y Técnicas (CONICET) (Argentina); Bern, Francis; Barzola-Quiquia, José; Esquinazi, Pablo, E-mail: esquin@physik.uni-leipzig.de [Division of Superconductivity and Magnetism, Institute for Experimental Physics II, University of Leipzig, D-04103 Leipzig (Germany); Tirado, Mónica [Laboratorio de Nanomateriales y Propiedades Dieléctricas, Dep. de Física, FACET, Universidad Nacional de Tucumán, Tucumán (Argentina)

    2014-03-10

    To neutralise the influence of the surface of ZnO nanowires for photonics and optoelectronic applications, we have covered them with insulating MgO film and individually contacted them for electrical characterisation. We show that such a metal-insulator-semiconductor-type nanodevice exhibits a high diode ideality factor of 3.4 below 1 V. MgO shell passivates ZnO surface states and provides confining barriers to electrons and holes within the ZnO core, favouring excitonic ultraviolet radiative recombination, while suppressing defect-related luminescence in the visible and improving electrical conductivity. The results indicate the potential use of ZnO/MgO nanowires as a convenient building block for nano-optoelectronic devices.

  8. Single crystalline cylindrical nanowires – toward dense 3D arrays of magnetic vortices

    KAUST Repository

    Ivanov, Yurii P.

    2016-03-31

    Magnetic vortex-based media have recently been proposed for several applications of nanotechnology; however, because lithography is typically used for their preparation, their low-cost, large-scale fabrication is a challenge. One solution may be to use arrays of densely packed cobalt nanowires that have been efficiently fabricated by electrodeposition. In this work, we present this type of nanoscale magnetic structures that can hold multiple stable magnetic vortex domains at remanence with different chiralities. The stable vortex state is observed in arrays of monocrystalline cobalt nanowires with diameters as small as 45 nm and lengths longer than 200 nm with vanishing magnetic cross talk between closely packed neighboring wires in the array. Lorentz microscopy, electron holography and magnetic force microscopy, supported by micromagnetic simulations, show that the structure of the vortex state can be adjusted by varying the aspect ratio of the nanowires. The data we present here introduce a route toward the concept of 3-dimensional vortex-based magnetic memories.

  9. CdSe quantum dot in vertical ZnSe nanowire and photonic wire for efficient single-photon emission

    DEFF Research Database (Denmark)

    Cremel, Thibault; Bellet-Amalric, Edith; Cagnon, Laurent

    We’ve recently demonstrated that a CdSe quantum dot (QD) in a ZnSe nanowire (NW) can emit triggered single photons up to room temperature [1]. In this contribution, we present the possibilities of enhancing the photon emission and collection in such NW-QDs structures for a realistic application...... as a single photon source. We have grown vertically oriented ZnSe NWs (with typical diameter of 10 nm) by molecular beam epitaxy on a ZnSe(111)B buffer layer. The growth of a ZnMgSe passivating shell increases the (otherwise weak) ZnSe near-band-edge luminescence by two orders of magnitude. This has allowed...

  10. Probing the local environment of a single OPE3 molecule using inelastic tunneling electron spectroscopy.

    Science.gov (United States)

    Frisenda, Riccardo; Perrin, Mickael L; van der Zant, Herre S J

    2015-01-01

    We study single-molecule oligo(phenylene ethynylene)dithiol junctions by means of inelastic electron tunneling spectroscopy (IETS). The molecule is contacted with gold nano-electrodes formed with the mechanically controllable break junction technique. We record the IETS spectrum of the molecule from direct current measurements, both as a function of time and electrode separation. We find that for fixed electrode separation the molecule switches between various configurations, which are characterized by different IETS spectra. Similar variations in the IETS signal are observed during atomic rearrangements upon stretching of the molecular junction. Using quantum chemistry calculations, we identity some of the vibrational modes which constitute a chemical fingerprint of the molecule. In addition, changes can be attributed to rearrangements of the local molecular environment, in particular at the molecule-electrode interface. This study shows the importance of taking into account the interaction with the electrodes when describing inelastic contributions to transport through single-molecule junctions.

  11. Magnetization tunneling in high-symmetry single-molecule magnets: Limitations of the giant spin approximation

    Science.gov (United States)

    Wilson, A.; Lawrence, J.; Yang, E.-C.; Nakano, M.; Hendrickson, D. N.; Hill, S.

    2006-10-01

    Electron paramagnetic resonance (EPR) studies of a Ni4 single-molecule magnet (SMM) yield the zero-field-splitting (ZFS) parameters D , B40 , and B44 , based on the giant spin approximation (GSA) with S=4 ; B44 is responsible for the magnetization tunneling in this SMM. Experiments on an isostructural Ni-doped Zn4 crystal establish the NiII ion ZFS parameters. The fourth-order ZFS parameters in the GSA arise from the interplay between the Heisenberg interaction Jŝ1•ŝ2 and the second-order single-ion anisotropy, giving rise to mixing of higher-lying S≠4 states into the S=4 state. Consequently, J directly influences the ZFS in the ground state, enabling its determination by EPR.

  12. Probing the local environment of a single OPE3 molecule using inelastic tunneling electron spectroscopy

    Directory of Open Access Journals (Sweden)

    Riccardo Frisenda

    2015-12-01

    Full Text Available We study single-molecule oligo(phenylene ethynylenedithiol junctions by means of inelastic electron tunneling spectroscopy (IETS. The molecule is contacted with gold nano-electrodes formed with the mechanically controllable break junction technique. We record the IETS spectrum of the molecule from direct current measurements, both as a function of time and electrode separation. We find that for fixed electrode separation the molecule switches between various configurations, which are characterized by different IETS spectra. Similar variations in the IETS signal are observed during atomic rearrangements upon stretching of the molecular junction. Using quantum chemistry calculations, we identity some of the vibrational modes which constitute a chemical fingerprint of the molecule. In addition, changes can be attributed to rearrangements of the local molecular environment, in particular at the molecule–electrode interface. This study shows the importance of taking into account the interaction with the electrodes when describing inelastic contributions to transport through single-molecule junctions.

  13. Nanowire Growth for Photovoltaics

    DEFF Research Database (Denmark)

    Holm, Jeppe Vilstrup

    consisting of a single, vertical, gallium arsenide(GaAs) nanowire grown on silicon with a radial p-i-n-junction. The average concentration was ~8, and the peak concentration was ~12. By increasing the number of junctions in solar cells, they can extract more energy per absorbed photon. In ideal multi...... of the nanowires, some of which were removed from their growth substrate and turned into single nanowire solar cells (SNWSC). The best device showed a conversion efficiency of 6.8% under 1.5AMG 1-sun illumination. In order to improve the efficiency a surface passivating shell consisting of highly doped, wide......Solar cells commercial success is based on an efficiency/cost calculation. Nanowire solar cells is one of the foremost candidates to implement third generation photo voltaics, which are both very efficient and cheap to produce. This thesis is about our progress towards commercial nanowire solar...

  14. Atomistic simulations on the axial nanowelding configuration and contact behavior between Ag nanowire and single-walled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Jianlei, E-mail: cjlxjtu@mail.xjtu.edu.cn; Zhang, Jianwei [Xi’an Jiaotong University, State Key Laboratory for Manufacturing Systems Engineering (China); He, Xiaoqiao, E-mail: bcxqhe@cityu.edu.hk [City University of Hong Kong, Department of Architecture and Civil Engineering (Hong Kong); Yang, Xinjun [Fudan University, State Key Laboratory of Surface Physics and Department of Physics (China); Mei, Xuesong; Wang, Wenjun; Jiang, Gedong; Wang, Kedian [Xi’an Jiaotong University, State Key Laboratory for Manufacturing Systems Engineering (China); Yang, Lijun; Xie, Hui [Harbin Institute of Technology, State Key Laboratory of Robotics and Systems (China)

    2017-03-15

    As for the interesting new building blocks, the Ag nanowires (AgNWs) and single-walled carbon nanotubes (SWNTs) as the interesting new building blocks are viewed as the promising candidates for the next-generation interconnects due to their most remarkable electrical, thermal, optical, mechanical, and other properties. The axial nanowelding of head-to-head style and side-to-side style is relatively simulated with the molecular dynamics method. As for the head-to-head structural style, SWNTs will move toward the AgNWs and contact with the head of AgNWs. And, the part of the Ag nanowire may be subsequently encapsulated in SWNT with the core-filling Ag atom chain as the final atomic contact configuration during nanowelding, which is related to the nanowelding temperature. When the SWNTs and AgNWs are arranged by the side-to-side contact style, the SWNTs will move along the SWNT surface and may eventually catch up with the AgNW being neck and neck. Aiming at the final axial atomic configurations and the contact behavior during nanowelding process, the related dominant mechanism is revealed in this paper.

  15. Atomistic simulations on the axial nanowelding configuration and contact behavior between Ag nanowire and single-walled carbon nanotubes

    International Nuclear Information System (INIS)

    Cui, Jianlei; Zhang, Jianwei; He, Xiaoqiao; Yang, Xinjun; Mei, Xuesong; Wang, Wenjun; Jiang, Gedong; Wang, Kedian; Yang, Lijun; Xie, Hui

    2017-01-01

    As for the interesting new building blocks, the Ag nanowires (AgNWs) and single-walled carbon nanotubes (SWNTs) as the interesting new building blocks are viewed as the promising candidates for the next-generation interconnects due to their most remarkable electrical, thermal, optical, mechanical, and other properties. The axial nanowelding of head-to-head style and side-to-side style is relatively simulated with the molecular dynamics method. As for the head-to-head structural style, SWNTs will move toward the AgNWs and contact with the head of AgNWs. And, the part of the Ag nanowire may be subsequently encapsulated in SWNT with the core-filling Ag atom chain as the final atomic contact configuration during nanowelding, which is related to the nanowelding temperature. When the SWNTs and AgNWs are arranged by the side-to-side contact style, the SWNTs will move along the SWNT surface and may eventually catch up with the AgNW being neck and neck. Aiming at the final axial atomic configurations and the contact behavior during nanowelding process, the related dominant mechanism is revealed in this paper.

  16. Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur

    2011-10-01

    Spin-polarization asymmetry is the key parameter in asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) in magnetic tunnel junctions. In this paper, we study the value of the TMR as a function of the applied voltage Va in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions. As a result, we found that AVB may help to determine the exact values of Fermi wave vectors for minority and majority conducting spin sub-bands. Moreover, significant asymmetry of the experimental TMR-Va curves, which arises due to different annealing regimes, is explained by different heights of the tunnel barriers and values of the spin asymmetry. The numerical TMR-V a data are in good agreement with experimental ones. © 2011 IEEE.

  17. Comparison of femur tunnel aperture location in patients undergoing transtibial and anatomical single-bundle anterior cruciate ligament reconstruction.

    Science.gov (United States)

    Lee, Dae-Hee; Kim, Hyun-Jung; Ahn, Hyeong-Sik; Bin, Seong-Il

    2016-12-01

    Although three-dimensional computed tomography (3D-CT) has been used to compare femoral tunnel position following transtibial and anatomical anterior cruciate ligament (ACL) reconstruction, no consensus has been reached on which technique results in a more anatomical position because methods of quantifying femoral tunnel position on 3D-CT have not been consistent. This meta-analysis was therefore performed to compare femoral tunnel location following transtibial and anatomical ACL reconstruction, in both the low-to-high and deep-to-shallow directions. This meta-analysis included all studies that used 3D-CT to compare femoral tunnel location, using quadrant or anatomical coordinate axis methods, following transtibial and anatomical (AM portal or OI) single-bundle ACL reconstruction. Six studies were included in the meta-analysis. Femoral tunnel location was 18 % higher in the low-to-high direction, but was not significant in the deep-to-shallow direction, using the transtibial technique than the anatomical methods, when measured using the anatomical coordinate axis method. When measured using the quadrant method, however, femoral tunnel positions were significantly higher (21 %) and shallower (6 %) with transtibial than anatomical methods of ACL reconstruction. The anatomical ACL reconstruction techniques led to a lower femoral tunnel aperture location than the transtibial technique, suggesting the superiority of anatomical techniques for creating new femoral tunnels during revision ACL reconstruction in femoral tunnel aperture location in the low-to-high direction. However, the mean difference in the deep-to-shallow direction differed by method of measurement. Meta-analysis, Level II.

  18. Highly Ordered Single Crystalline Nanowire Array Assembled Three-Dimensional Nb3O7(OH) and Nb2O5 Superstructures for Energy Storage and Conversion Applications.

    Science.gov (United States)

    Zhang, Haimin; Wang, Yun; Liu, Porun; Chou, Shu Lei; Wang, Jia Zhao; Liu, Hongwei; Wang, Guozhong; Zhao, Huijun

    2016-01-26

    Three-dimensional (3D) metal oxide superstructures have demonstrated great potentials for structure-dependent energy storage and conversion applications. Here, we reported a facile hydrothermal method for direct growth of highly ordered single crystalline nanowire array assembled 3D orthorhombic Nb3O7(OH) superstructures and their subsequent thermal transformation into monoclinic Nb2O5 with well preserved 3D nanowire superstructures. The performance of resultant 3D Nb3O7(OH) and Nb2O5 superstructures differed remarkably when used for energy conversion and storage applications. The thermally converted Nb2O5 superstructures as anode material of lithium-ion batteries (LiBs) showed higher capacity and excellent cycling stability compared to the Nb3O7(OH) superstructures, while directly hydrothermal grown Nb3O7(OH) nanowire superstructure film on FTO substrate as photoanode of dye-sensitized solar cells (DSSCs) without the need for further calcination exhibited an overall light conversion efficiency of 6.38%, higher than that (5.87%) of DSSCs made from the thermally converted Nb2O5 film. The high energy application performance of the niobium-based nanowire superstructures with different chemical compositions can be attributed to their large surface area, superior electron transport property, and high light utilization efficiency resulting from a 3D superstructure, high crystallinity, and large sizes. The formation process of 3D nanowire superstructures before and after thermal treatment was investigated and discussed based on our theoretical and experimental results.

  19. Dipolar-Biased Tunneling of Magnetization in Crystals of Single Molecule Magnets

    Science.gov (United States)

    Awaga, Kunio

    2007-03-01

    The molecular cluster Mn12 has attracted much interest as a single-molecule magnet (SMM) and as a multi-redox system. It has a high-spin ground state of S=10 and a strong uniaxial magnetic anisotropy, and the combination of the two natures makes an effective potential barrier between the up and down spin states. At low temperatures, the magnetization curve exhibited a hysteresis loop and the quantum tunneling of magnetization (QTM). In the present work, we studied the structure and magnetic properties of the mixed-metal SMM, Mn11Cr, through the analysis of Mn11Cr/Mn12 mixed crystal. High-frequency EPR spectra were well explained by assuming that Mn11Cr was in a ground spin-state of S=19/2 with nearly the same EPR parameter set as for Mn12. QTM in Mn11Cr was observed with the same field interval as for Mn12. The magnetization of Mn11Cr and Mn12 in the mixed crystal can be independently manipulated by utilizing the difference between their coercive fields. The resonance fields of QTM in Mn11Cr are significantly affected by the magnetization direction of Mn12, suggesting the effect of dipolar-biased tunneling. Besides SMM, we would also like to report the unusual magnetic properties of spherical hollow nanomagnets, the electrical properties of heterocyclic thiazyl radicals, and their possible applications in spintronics and organic electronics.

  20. Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com; Troudi, M.; Sghaier, N.; Kalboussi, A. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Aimez, V. [Université de Sherbrooke, Laboratoire Nanotechnologies et Nanosystémes (UMI-LN2 3463), Université de Sherbrooke—CNRS—INSA de Lyon-ECL-UJF-CPE Lyon, Institut Interdisciplinaire d’Innovation Technologique (Canada); Drouin, D. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Souifi, A. [Institut des Nanotechnologies de Lyon—site INSA de Lyon, UMR CNRS 5270 (France)

    2016-09-15

    In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.

  1. Spin Quantum Tunneling via Entangled States in a Dimer of Exchange-Coupled Single-Molecule Magnets

    Science.gov (United States)

    Tiron, R.; Wernsdorfer, W.; Foguet-Albiol, D.; Aliaga-Alcalde, N.; Christou, G.

    2003-11-01

    A new family of supramolecular, antiferromagnetically exchange-coupled dimers of single-molecule magnets (SMMs) has recently been reported. Each SMM acts as a bias on its neighbor, shifting the quantum tunneling resonances of the individual SMMs. Hysteresis loop measurements on a single crystal of SMM dimers have now established quantum tunneling of the magnetization via entangled states of the dimer. This shows that the dimer really does behave as a quantum mechanically coupled dimer, and also allows the measurement of the longitudinal and transverse superexchange coupling constants.

  2. Direct synthesis of pure single-crystalline Magnéli phase Ti8O15 nanowires as conductive carbon-free materials for electrocatalysis

    Science.gov (United States)

    He, Chunyong; Chang, Shiyong; Huang, Xiangdong; Wang, Qingquan; Mei, Ao; Shen, Pei Kang

    2015-02-01

    The Magnéli phase Ti8O15 nanowires (NWs) have been grown directly on a Ti substrate by a facile one-step evaporation-deposition synthesis method under a hydrogen atmosphere. The Ti8O15 NWs exhibit an outstanding electrical conductivity at room temperature. The electrical conductivity of a single Ti8O15 nanowire is 20.6 S cm-1 at 300 K. Theoretical calculations manifest that the existence of a large number of oxygen vacancies changes the band structure, resulting in the reduction of the electronic resistance. The Magnéli phase Ti8O15 nanowires have been used as conductive carbon-free supports to load Pt nanoparticles for direct methanol oxidation reaction (MOR). The Pt/Ti8O15 NWs show an enhanced activity and extremely high durability compared with commercial Pt/C catalysts.The Magnéli phase Ti8O15 nanowires (NWs) have been grown directly on a Ti substrate by a facile one-step evaporation-deposition synthesis method under a hydrogen atmosphere. The Ti8O15 NWs exhibit an outstanding electrical conductivity at room temperature. The electrical conductivity of a single Ti8O15 nanowire is 20.6 S cm-1 at 300 K. Theoretical calculations manifest that the existence of a large number of oxygen vacancies changes the band structure, resulting in the reduction of the electronic resistance. The Magnéli phase Ti8O15 nanowires have been used as conductive carbon-free supports to load Pt nanoparticles for direct methanol oxidation reaction (MOR). The Pt/Ti8O15 NWs show an enhanced activity and extremely high durability compared with commercial Pt/C catalysts. Electronic supplementary information (ESI) available: Additional data for the characterization and experimental details see DOI: 10.1039/c4nr05806b

  3. Single-InN-Nanowire Nanogenerator with Upto 1 V Output Voltage

    KAUST Repository

    Huang, Chi-Te

    2010-07-30

    Piezoelectric potential of a InN nanowire (NW) growing along [011̄0] can be positive, negative, and zero depending on the direction of the applied transverse force. By measuring the output voltage of a InN-NW-based nanogenerator, about 40% to 55% of output voltages are within the range of ?1 and ?20 mV, and 25% to 30% of output voltages would exceed ?100 mV. Some output voltages could reach the magnitude of ?1000 mV, showing its great potential for fabricating high-output nanogenerators. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Controlling charges distribution at the surface of a single GaN nanowire by in-situ strain

    Directory of Open Access Journals (Sweden)

    Xiao Chen

    2017-08-01

    Full Text Available Effect of the strain on the charge distribution at the surface of a GaN semiconductor nanowire (NW has been investigated inside transmission electron microscope (TEM by in-situ off-axis electron holography. The outer and inner surfaces of the NW bent axially under compression of two Au electrodes were differently strained, resulting in difference of their Fermi levels. Consequently, the free electrons flow from the high Fermi level to the low level until the two Fermi levels aligned in a line. The potential distributions induced by charge redistribution in the two vacuum sides of the bent NW were examined respectively, and the opposite nature of the bounded charges on the outer and inner surfaces of the bent NW was identified. The results provide experimental evidence that the charge distribution at the surfaces of a single GaN NW can be controlled by different strains created along the NW.

  5. Intrinsic spin-relaxation induced negative tunnel magnetoresistance in a single-molecule magnet

    Science.gov (United States)

    Xie, Haiqing; Wang, Qiang; Xue, Hai-Bin; Jiao, HuJun; Liang, J.-Q.

    2013-06-01

    We investigate theoretically the effects of intrinsic spin-relaxation on the spin-dependent transport through a single-molecule magnet (SMM), which is weakly coupled to ferromagnetic leads. The tunnel magnetoresistance (TMR) is obtained by means of the rate-equation approach including not only the sequential but also the cotunneling processes. It is shown that the TMR is strongly suppressed by the fast spin-relaxation in the sequential region and can vary from a large positive to slight negative value in the cotunneling region. Moreover, with an external magnetic field along the easy-axis of SMM, a large negative TMR is found when the relaxation strength increases. Finally, in the high bias voltage limit the TMR for the negative bias is slightly larger than its characteristic value of the sequential region; however, it can become negative for the positive bias caused by the fast spin-relaxation.

  6. Single-molecule electron tunnelling through multiple redox levels with environmental relaxation

    DEFF Research Database (Denmark)

    Kuznetsov, A.M.; Ulstrup, Jens

    2004-01-01

    represent the substrate and tip in electrochemical in situ scanning tunnelling microscopy. An equivalent three-electrode configuration represents a molecular single-electron transistor in which the enclosing electrodes constitute source and drain, and the reference electrode the gate. Current-bias voltage...... relations at fixed electrochemical overpotential or gate voltage, and current-overpotential or current-gate voltage relations at fixed bias voltage are equivalent in the two systems. Due to the activation-less nature of the processes, electron flow between the electrodes through the molecular redox levels...... level(s) subsequent to electron transfer. Several physical mechanisms can be distinguished and distinctive current-overpotential/gate voltage or current-bias voltage relations obtained. These reflect electronic level separation, environmental nuclear reorganisation, and coherent or incoherent multi...

  7. Fabry-Perot Microcavity Modes in Single GaP/GaNP Core/Shell Nanowires.

    Science.gov (United States)

    Dobrovolsky, Alexander; Stehr, Jan E; Sukrittanon, Supanee; Kuang, Yanjin; Tu, Charles W; Chen, Weimin M; Buyanova, Irina A

    2015-12-16

    Semiconductor nanowires (NWs) are attracting increasing interest as nanobuilding blocks for optoelectronics and photonics. A novel material system that is highly suitable for these applications are GaNP NWs. In this article, we show that individual GaP/GaNP core/shell nanowires (NWs) grown by molecular beam epitaxy on Si substrates can act as Fabry-Perot (FP) microcavities. This conclusion is based on results of microphotoluminescence (μ-PL) measurements performed on individual NWs, which reveal periodic undulations of the PL intensity that follow an expected pattern of FP cavity modes. The cavity is concluded to be formed along the NW axis with the end facets acting as reflecting mirrors. The formation of the FP modes is shown to be facilitated by an increasing index contrast with the surrounding media. Spectral dependence of the group refractive index is also determined for the studied NWs. The observation of the FP microcavity modes in the GaP/GaNP core/shell NWs can be considered as a first step toward achieving lasing in this quasidirect bandgap semiconductor in the NW geometry. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Fast magnetization tunneling in tetranickel(II) single-molecule magnets.

    Science.gov (United States)

    Yang, En-Che; Wernsdorfer, Wolfgang; Zakharov, Lev N; Karaki, Yoshitomo; Yamaguchi, Akira; Isidro, Rose M; Lu, Guo-Di; Wilson, Samuel A; Rheingold, Arnold L; Ishimoto, Hidehiko; Hendrickson, David N

    2006-01-23

    A series of Ni(4) cubane complexes with the composition [Ni(hmp)(ROH)Cl](4) complexes 1-4 where R= -CH(3) (complex 1), -CH(2)CH(3) (complex 2), -CH(2)CH(2)(C(4)H(9)) (complex 3), -CH(2)CH(2)CH(2)(C(6)H(11)) (complex 4), hmp(-) is the anion of 2-hydroxymethylpyridine, t-Buhmp(-) is the anion of 4-tert-butyl-2-hydroxymethylpyridine, and dmb is 3,3-dimethyl-1-butanol] and [Ni(hmp)(dmb)Br](4) (complex 5) and [Ni(t-Buhmp)(dmb)Cl](4) (complex 6) were prepared. All six complexes were characterized by dc magnetic susceptibility data to be ferromagnetically coupled to give an S = 4 ground state with significant magnetoanisotropy (D approximately equal to -0.6 cm(-1)). Magnetization hysteresis measurements carried out on single crystals of complexes 1-6 establish the single-molecule magnet (SMM) behavior of these complexes. The exchange bias observed in the magnetization hysteresis loops of complexes 1 and 2 is dramatically decreased to zero in complex 3, where the bulky dmb ligand is employed. Fast tunneling of magnetization is observed for the high-symmetry (S(4) site symmetry) Ni(4) complexes in the crystal of complex 3, and the tunneling rate can even be enhanced by destroying the S(4) site symmetry, as is the case for complex 4, where there are two crystallographically different Ni(4) molecules, one with C(2) and the other with C(1) site symmetry. Magnetic ordering temperatures due to intermolecular dipolar and magnetic exchange interactions were determined by means of very low-temperature ac susceptibility measurements; complex 1 orders at 1100 mK, complex 3 at 290 mK, complex 4 at approximately 80 mK, and complex 6 at lower temperatures for those complexes with the bulkiest ligands.

  9. Electronic Transport in Single Molecule Junctions: Control of the Molecule-Electrode Coupling Through Intramolecular Tunneling Barriers

    DEFF Research Database (Denmark)

    Danilov, Andrey; Kubatkin, Sergey; Kafanov, Sergey

    2008-01-01

    We report on single molecule electron transport measurements of two oligophenylenevinylene (OPV3) derivatives placed in a nanogap between gold (Au) or lead (Pb) electrodes in a field effect transistor device. Both derivatives contain thiol end groups that allow chemical binding to the electrodes...... to sequential tunneling and Coulomb blockade behavior....

  10. InAs/Si Hetero-Junction Nanotube Tunnel Transistors

    KAUST Repository

    Hanna, Amir

    2015-04-29

    Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET.

  11. Crystal lattice desolvation effects on the magnetic quantum tunneling of single-molecule magnets

    Science.gov (United States)

    Redler, G.; Lampropoulos, C.; Datta, S.; Koo, C.; Stamatatos, T. C.; Chakov, N. E.; Christou, G.; Hill, S.

    2009-09-01

    High-frequency electron paramagnetic resonance (HFEPR) and alternating current (ac) susceptibility measurements are reported for a new high-symmetry Mn12 complex, [Mn12O12(O2CCH3)16(CH3OH)4]ṡCH3OH . The results are compared to those of other high-symmetry spin S=10Mn12 single-molecule magnets (SMMs), including the original acetate, [Mn12(O2CCH3)16(H2O)4]ṡ2CH3CO2Hṡ4H2O , and the [Mn12O12(O2CCH2Br)16(H2O)4]ṡ4CH2Cl2 and [Mn12O12(O2CCH2But)16(CH3OH)4]ṡCH3OH complexes. These comparisons reveal important insights into the factors that influence the values of the effective barrier to magnetization reversal, Ueff , deduced on the basis of ac susceptibility measurements. In particular, we find that variations in Ueff can be correlated with the degree of disorder in a crystal which can be controlled by desolvating (drying) samples. This highlights the importance of careful sample handling when making measurements on SMM crystals containing volatile lattice solvents. The HFEPR data additionally provide spectroscopic evidence suggesting that the relatively weak disorder induced by desolvation influences the quantum tunneling interactions and that it is under-barrier tunneling that is responsible for a consistent reduction in Ueff that is found upon drying samples. Meanwhile, the axial anisotropy deduced from HFEPR is found to be virtually identical for all four Mn12 complexes, with no measurable reduction upon desolvation.

  12. Magnetic Quantum Tunneling in Single Molecule Magnets: Mn-12 and Others

    Science.gov (United States)

    del Barco, Enrique

    2004-03-01

    Magnetic quantum tunneling (MQT) has been studied in single molecule magnets (SMMs) using a micro-Hall effect magnetometer in a superconducting high field vector magnet system that incorporates the possibility of applying pulsed microwave fields. Mn_12-acetate has been studied extensively over the years. However, only recently the symmetry of MQT and the nature of the transverse interactions important to MQT have been determined [1,2]. Magnetic measurements in the pure quantum tunneling regime (0.6 K) illustrate that an average crystal fourfold MQT symmetry is due to local molecular environments of twofold symmetry that are rotated by 90 degrees with respect to one another, confirming that disorder which lowers the molecule symmetry is important to MQT. We have studied a subset of these lower site symmetry molecules and present evidence for a Berry phase that results from a combination of second and forth order contributions to the transverse magnetic anisotropy. These observations are consistent with high frequency EPR studies of the transverse interactions in Mn_12-acetate [3]. Finally, we discuss recent experiments in which microwave radiation is applied to modulate MQT and characterize the lifetimes and coherence times of states that are superpositions of "up" and "down" high spin-projections. [1] E. del Barco, et al., Phys. Rev. Lett. 91, 047203 (2003) [2] S. Hill, et al., Phys. Rev. Lett. 90, 217204 (2003). [3] E. del Barco, A, D. Kent, R. S. Edwards, S. I. Jones, S. Hill, J. M. North, N. S. Dalal, E. M. Rumnberger, D. N. Hendrickson and G. Christou, to be published.

  13. Effectiveness of PELOID therapy in carpal tunnel syndrome: A randomized controlled single blind study

    Science.gov (United States)

    Metin Ökmen, Burcu; Kasapoğlu Aksoy, Meliha; Güneş, Aygül; Eröksüz, Riza; Altan, Lale

    2017-08-01

    Carpal tunnel syndrome(CTS) is the most common neuromuscular cause of upper extremity disability. We aimed to investigate the effectiveness of peloid therapy in patients with CTS. This randomized, controlled, single-blind study enrolled 70 patients between the ages of 30 to 65 who had a diagnosis of either mild, mild-to-moderate, or moderate CTS. The patients were randomized into two groups using random number table. In the first group, (Group 1)( n = 35), patients were given splint (every night for 6 weeks) + peloid treatment(five consecutive days a week for 2 weeks) and in the second group, (Group 2)( n = 28), patients received splint treatment(every night for 6 weeks) alone. The patients were assessed by using visual analog scale(VAS) for pain, electroneuromyography(ENMG), the Boston Carpal Tunnel Syndrome Questionnaire(BCTSQ), hand grip strength(HGS), finger grip strength(FGS), and Short Form-12(SF-12). The data were obtained before treatment(W0), immediately after treatment(W2), and one month after treatment(W6). Both in Group 1 and 2, there was a statistically significant improvement in all the evaluation parameters at W2 and W6 when compared to W0( p < 0.05). Comparison of the groups with each other revealed significantly better results for VAS, BCTSQ, mSNCV, SF-12 in Group 1 than in Group 2 at W2( p < 0.05). There was also a statistically significant difference in favor of Group 1 for VAS, BCTSQ, FGS and MCS at W6 when compared to W0 ( p < 0.05). The results of our study demonstrated that in patients with CTS; peloid + splint treatment was more effective than splint treatment alone in pain, functionality and life quality both at after treatment(W2) and one month after treatment (W6). We may suggest peloid as a supplementary therapeutic agent in CTS.

  14. The effects of changing the electrodes temperature on the tunnel magnetoresistance in the ferromagnetic single electron transistor

    Science.gov (United States)

    Ahmadi, N.; Pourali, N.; Kavaz, E.

    2018-01-01

    Ferromagnetic single electron transistor with electrodes having different temperatures is investigated and the effects of changing electrodes temperature on TMR of system are studied. A modified orthodox theory is used to study the system and to calculate the electron tunneling transition rate. The results show that the temperature of electrodes can be an effective tool to control and tune the tunnel magnetoresistance of FM-SET. Also, the effects of parameters such as resistance ratio of junctions, magnetic polarization and spin relaxation time on the behaviour of the system are studied.

  15. Temperature dependent tunneling study of CaFe1.96Ni0.04As2 single crystals

    International Nuclear Information System (INIS)

    Dutta, Anirban; Gupta, Anjan K.; Thamizhavel, A.

    2014-01-01

    We report on temperature dependent scanning tunneling microscopy and spectroscopy studies on CaFe 1.96 Ni 0.04 As 2 single crystals in 5.4 – 19.7 K temperature range across the normal metal - superconductor transition temperature, T C = 14K. The in-situ cleaved crystals show reasonably flat surface with signatures of atomic resolution. The tunnel spectra show significant spatial inhomogeneity below T C , which reduces significantly as the temperature goes above the T C . We discuss these results in terms of an inhomogeneous electronic phase that may exist due to the vicinity of this composition to the quantum critical point

  16. Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics

    KAUST Repository

    Hota, Mrinal Kanti

    2017-06-08

    We report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as charge trapping and tunneling layer. This is different from conventional flash cells, where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ~10 V. Moreover, the flash memory device shows a stable 2-bit memory performance, good reliability, including data retention for more than 104 sec and endurance performance for more than 100 cycles. The use of a common charge trapping and tunneling layer can simplify advanced flash memory fabrication.

  17. Multiple Schottky Barrier-Limited Field-Effect Transistors on a Single Silicon Nanowire with an Intrinsic Doping Gradient.

    Science.gov (United States)

    Barreda, Jorge L; Keiper, Timothy D; Zhang, Mei; Xiong, Peng

    2017-04-05

    In comparison to conventional (channel-limited) field-effect transistors (FETs), Schottky barrier-limited FETs possess some unique characteristics which make them attractive candidates for some electronic and sensing applications. Consequently, modulation of the nano Schottky barrier at a metal-semiconductor interface promises higher performance for chemical and biomolecular sensor applications when compared to conventional FETs with ohmic contacts. However, the fabrication and optimization of devices with a combination of ideal ohmic and Schottky contacts as the source and drain, respectively, present many challenges. We address this issue by utilizing Si nanowires (NWs) synthesized by a chemical vapor deposition process which yields a pronounced doping gradient along the length of the NWs. Devices with a series of metal contacts on a single Si NW are fabricated in a single lithography and metallization process. The graded doping profile of the NW is manifested in monotonic increases in the channel and junction resistances and variation of the nature of the contacts from ohmic to Schottky of increasing effective barrier height along the NW. Hence multiple single Schottky junction-limited FETs with extreme asymmetry and high reproducibility are obtained on an individual NW. A definitive correlation between increasing Schottky barrier height and enhanced gate modulation is revealed. Having access to systematically varying Schottky barrier contacts on the same NW device provides an ideal platform for identifying optimal device characteristics for sensing and electronic applications.

  18. A temperature dependent tunneling study of the spin density wave gap in EuFe2As2 single crystals.

    Science.gov (United States)

    Dutta, Anirban; Anupam; Hossain, Z; Gupta, Anjan K

    2013-09-18

    We report temperature dependent scanning tunneling microscopy and spectroscopy measurements on single crystals of EuFe2As2 in the 15-292 K temperature range. The in situ cleaved crystals show atomic terraces with homogeneous tunnel spectra that correlate well with the spin density wave (SDW) transition at a temperature, TSDW ≈ 186 K. Above TSDW the local tunnel spectra show a small depression in the density of states (DOS) near the Fermi energy (EF). The gap becomes more pronounced upon entering the SDW state with a gap value ∼90 meV at 15 K. However, the zero bias conductance remains finite down to 15 K indicating a finite DOS at the EF in the SDW phase. Furthermore, no noticeable change is observed in the DOS at the antiferromagnetic ordering transition of Eu(2+) moments at 19 K.

  19. Two-photon-induced hot-electron transfer to a single molecule in a scanning tunneling microscope

    International Nuclear Information System (INIS)

    Wu, S. W.; Ho, W.

    2010-01-01

    The junction of a scanning tunneling microscope (STM) operating in the tunneling regime was irradiated with femtosecond laser pulses. A photoexcited hot electron in the STM tip resonantly tunnels into an excited state of a single molecule on the surface, converting it from the neutral to the anion. The electron-transfer rate depends quadratically on the incident laser power, suggesting a two-photon excitation process. This nonlinear optical process is further confirmed by the polarization measurement. Spatial dependence of the electron-transfer rate exhibits atomic-scale variations. A two-pulse correlation experiment reveals the ultrafast dynamic nature of photoinduced charging process in the STM junction. Results from these experiments are important for understanding photoinduced interfacial charge transfer in many nanoscale inorganic-organic structures.

  20. Photocatalytic segmented nanowires and single-step iron oxide nanotube synthesis: Templated electrodeposition as all-round tool

    NARCIS (Netherlands)

    Maas, M.G.; Rodijk, E.J.B.; Maijenburg, A.W.; ten Elshof, Johan E.; Blank, David H.A.; Nielsch, K.; Fontcuberta i Morral, A.; Holt, J.K.; Thomson, C.V.

    2010-01-01

    Templated electrodeposition was used to synthesize silver-zinc oxide nanowires and iron oxide (Fe2O3) nanotubes in polycarbonate track etched (PCTE) membranes. Metal/oxide segmented nanowires were made to produce hydrogen gas from a water/methanol mixture under ultraviolet irradiation. It was

  1. Structural and electrochemical properties of single crystalline MoV 2O8 nanowires for energy storage devices

    KAUST Repository

    Shahid, Muhammad

    2013-05-01

    We report the synthesis of MoV2O8 nanowires of high quality using spin coating followed by the thermal annealing process. Transmission electron microscopy (TEM) reveals the average diameter of synthesized nanowire about 100 nm, and average length ranges from 1 to 5 μm. The TEM analysis further confirms the <001> growth direction of MoV 2O8 nanowires. The electrochemical properties of synthesized nanowires using cyclic voltammetry show the specific capacitance 56 Fg-1 at the scan rate of 5 mV s-1 that remains 24 Fg -1 at 100 mV s-1. The electrochemical measurements suggest that the MoV2O8 nanowires can be used as a material for the future electrochemical capacitors (energy storage devices). © 2012 Published by Elsevier Inc. All rights reserved.

  2. An ultrasensitive electrochemical DNA biosensor based on a copper oxide nanowires/single-walled carbon nanotubes nanocomposite

    International Nuclear Information System (INIS)

    Chen, Mei; Hou, Changjun; Huo, Danqun; Yang, Mei; Fa, Huanbao

    2016-01-01

    Graphical abstract: A novel and sensitive electrochemical biosensor based on hybrid nanocomposite consisting of copper oxide nanowires (CuO NWs) and carboxyl-functionalized single-walled carbon nanotubes (SWCNTs-COOH) was first developed for the detection of the specific-sequence target DNA. This schematic represents the fabrication procedure of our DNA biosensor. - Highlights: • An ultrasensitive DNA electrochemical biosensor was developed. • CuO NWs entangled with the SWCNTs formed a mesh structure with good conductivity. • It is the first time use of CuONWs-SWCNTs hybrid nanocomposite for DNA detection. • The biosensor is simple, selective, stable, and sensitive. • The biosensor has great potential for use in analysis of real samples. - Abstract: Here, we developed a novel and sensitive electrochemical biosensor to detect specific-sequence target DNA. The biosensor was based on a hybrid nanocomposite consisting of copper oxide nanowires (CuO NWs) and carboxyl-functionalized single-walled carbon nanotubes (SWCNTs-COOH). The resulting CuO NWs/SWCNTs layers exhibited a good differential pulse voltammetry (DPV) current response for the target DNA sequences, which we attributed to the properties of CuO NWs and SWCNTs. CuO NWs and SWCNTs hybrid composites with highly conductive and biocompatible nanostructure were characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), and cyclic voltammetry (CV). Immobilization of the probe DNA on the electrode surface was largely improved due to the unique synergetic effect of CuO NWs and SWCNTs. DPV was applied to monitor the DNA hybridization event, using adriamycin as an electrochemical indicator. Under optimal conditions, the peak currents of adriamycin were linear with the logarithm of target DNA concentrations (ranging from 1.0 × 10 −14 to 1.0 × 10 −8 M), with a detection limit of 3.5 × 10 −15 M (signal/noise ratio of 3). The biosensor also showed high selectivity to

  3. An ultrasensitive electrochemical DNA biosensor based on a copper oxide nanowires/single-walled carbon nanotubes nanocomposite

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Mei [Key Laboratory of Biorheology Science and Technology, Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044 (China); Hou, Changjun, E-mail: houcj@cqu.edu.cn [Key Laboratory of Biorheology Science and Technology, Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044 (China); National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology, Chongqing University, Chongqing 400044 (China); Huo, Danqun [Key Laboratory of Biorheology Science and Technology, Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044 (China); National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology, Chongqing University, Chongqing 400044 (China); Yang, Mei [Key Laboratory of Biorheology Science and Technology, Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044 (China); Fa, Huanbao [College of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China)

    2016-02-28

    Graphical abstract: A novel and sensitive electrochemical biosensor based on hybrid nanocomposite consisting of copper oxide nanowires (CuO NWs) and carboxyl-functionalized single-walled carbon nanotubes (SWCNTs-COOH) was first developed for the detection of the specific-sequence target DNA. This schematic represents the fabrication procedure of our DNA biosensor. - Highlights: • An ultrasensitive DNA electrochemical biosensor was developed. • CuO NWs entangled with the SWCNTs formed a mesh structure with good conductivity. • It is the first time use of CuONWs-SWCNTs hybrid nanocomposite for DNA detection. • The biosensor is simple, selective, stable, and sensitive. • The biosensor has great potential for use in analysis of real samples. - Abstract: Here, we developed a novel and sensitive electrochemical biosensor to detect specific-sequence target DNA. The biosensor was based on a hybrid nanocomposite consisting of copper oxide nanowires (CuO NWs) and carboxyl-functionalized single-walled carbon nanotubes (SWCNTs-COOH). The resulting CuO NWs/SWCNTs layers exhibited a good differential pulse voltammetry (DPV) current response for the target DNA sequences, which we attributed to the properties of CuO NWs and SWCNTs. CuO NWs and SWCNTs hybrid composites with highly conductive and biocompatible nanostructure were characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), and cyclic voltammetry (CV). Immobilization of the probe DNA on the electrode surface was largely improved due to the unique synergetic effect of CuO NWs and SWCNTs. DPV was applied to monitor the DNA hybridization event, using adriamycin as an electrochemical indicator. Under optimal conditions, the peak currents of adriamycin were linear with the logarithm of target DNA concentrations (ranging from 1.0 × 10{sup −14} to 1.0 × 10{sup −8} M), with a detection limit of 3.5 × 10{sup −15} M (signal/noise ratio of 3). The biosensor also showed high

  4. Extreme Band Engineering of III-Nitride Nanowire Heterostructures for Electronic and Photonic Application

    Science.gov (United States)

    Sarwar, ATM Golam

    Bottom-up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating dislocations. The resulting nanowires are used to fabricate light-emitting diodes (LEDs), lasers, solar cells, and sensors. The aim of this work is to investigate extreme heterostructures, which are impossible or very hard to realize in conventional planar films, exploiting the strain accommodation property of nanowires and engineer their band structure for novel electronic and photonic applications. To this end, in this thesis, III-Nitride semiconductor nanowires are investigated. In the first part of this work, a complete growth phase diagram of InN nanowires on silicon using plasma assisted molecular beam epitaxy is developed, and structural and optical characteristics are mapped as a function of growth parameters. Next, a novel up-side down pendeoepitaxial growth of InN forming mushroom-like microstructures is demonstrated and detail structural and optical characterizations are performed. Based on this, a method to grow strain-free large area single crystalline InN or thin film is proposed and the growth of InN on patterned GaN is investigated. The optimized growth conditions developed for InN are further used to grow InGaN nanowires graded over the whole composition range. Numerical energy band simulation is performed to better understand the effect of polarization charge on photo-carrier transport in these extremely graded nanowires. A novel photodetector device with negative differential photocurrent is demonstrated using the graded InGaN nanowires. In the second part of this thesis, polarization-induced nanowire light emitting diodes (PINLEDs) are investigated. The electrical and optical properties of the nanowire heterostructure are engineered and optimized for ultraviolet and deep ultraviolet applications. The electrical

  5. Single-crystalline In2S3 nanowire-based flexible visible-light photodetectors with an ultra-high photoresponse

    Science.gov (United States)

    Xie, Xuming; Shen, Guozhen

    2015-03-01

    With a band gap of 2.28 eV, In2S3 is an excellent candidate for visible-light sensitive photodetectors. By growing single-crystalline In2S3 nanowires via a simple CVD method, we report the fabrication of high-performance single-crystal In2S3 nanowire-based flexible photodetectors. The as-fabricated flexible photodetectors exhibited an ultra-high Ion/Ioff ratio up to 106 and a high sensitivity to visible incident light with responsivity and quantum efficiency as high as 7.35 × 104 A W-1 and 2.28 × 107%, respectively. Besides, the flexible photodetectors were demonstrated to possess a robust flexibility and excellent stability. With these favorable merits, In2S3 nanowires are believed to have a promising future in the application of high performance and flexible integrated optoelectronic devices.With a band gap of 2.28 eV, In2S3 is an excellent candidate for visible-light sensitive photodetectors. By growing single-crystalline In2S3 nanowires via a simple CVD method, we report the fabrication of high-performance single-crystal In2S3 nanowire-based flexible photodetectors. The as-fabricated flexible photodetectors exhibited an ultra-high Ion/Ioff ratio up to 106 and a high sensitivity to visible incident light with responsivity and quantum efficiency as high as 7.35 × 104 A W-1 and 2.28 × 107%, respectively. Besides, the flexible photodetectors were demonstrated to possess a robust flexibility and excellent stability. With these favorable merits, In2S3 nanowires are believed to have a promising future in the application of high performance and flexible integrated optoelectronic devices. Electronic supplementary information (ESI) available: XRD pattern, SEM image of the back gate FETs, Electronic transport properties, and I-V curves of the device in dark. See DOI: 10.1039/c5nr00410a

  6. Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage

    Science.gov (United States)

    Limpert, Steven; Burke, Adam; Chen, I.-Ju; Anttu, Nicklas; Lehmann, Sebastian; Fahlvik, Sofia; Bremner, Stephen; Conibeer, Gavin; Thelander, Claes; Pistol, Mats-Erik; Linke, Heiner

    2017-10-01

    Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated ‘hot carriers’ before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we point out that this device is a hot carrier solar cell and discuss its performance in those terms. In the demonstrated devices, InP heterostructures are used as energy filters in order to thermoelectrically harvest the energy of hot electrons photogenerated in InAs absorber segments. The obtained photovoltage depends on the heterostructure design of the energy filter and is therefore tunable. By using a high-resistance, thermionic barrier, an open-circuit voltage is obtained that is in excess of the Shockley-Queisser limit. These results provide generalizable insight into how to realize high voltage hot carrier solar cells in low-bandgap materials, and therefore are a step towards the demonstration of higher efficiency hot carrier solar cells.

  7. Micro-pulse polarization lidar at 1.5  μm using a single superconducting nanowire single-photon detector.

    Science.gov (United States)

    Qiu, Jiawei; Xia, Haiyun; Shangguan, Mingjia; Dou, Xiankang; Li, Manyi; Wang, Chong; Shang, Xiang; Lin, Shengfu; Liu, Jianjiang

    2017-11-01

    An all-fiber, eye-safe and micro-pulse polarization lidar is demonstrated with a polarization-maintaining structure, incorporating a single superconducting nanowire single-photon detector (SNSPD) at 1.5 μm. The time-division multiplexing technique is used to achieve a calibration-free optical layout. A single piece of detector is used to detect the backscatter signals at two orthogonal states in an alternative sequence. Thus, regular calibration of the two detectors in traditional polarization lidars is avoided. The signal-to-noise ratio of the lidar is guaranteed by using an SNSPD, providing high detection efficiency and low dark count noise. The linear depolarization ratio (LDR) of the urban aerosol is observed horizontally over 48 h in Hefei [N31°50'37'', E117°15'54''], when a heavy air pollution is spreading from the north to the central east of China. Phenomena of LDR bursts are detected at a location where a building is under construction. The lidar results show good agreement with the data detected from a sun photometer, a 532 nm visibility lidar, and the weather forecast information.

  8. Horizontal Assembly of Single Nanowire Diode Fabricated by p-n Junction GaN NW Grown by MOCVD

    Directory of Open Access Journals (Sweden)

    Ji-Hyeon Park

    2014-01-01

    Full Text Available Uniaxially p-n junction gallium nitride nanowires have been synthesized via metal-organic chemical vapor deposition method. Nanowires prepared on Si(111 substrates were found to grow perpendicular to the substrate, and the transmission electron microscopy studies demonstrated that the nanowires had singlecrystalline structures with a growth axis. The parallel assembly of the p-n junction nanowire was prepared on a Si substrate with a thermally grown SiO2 layer. The transport studies of horizontal gallium nitride nanowire structures assembled from p- and n-type materials show that these junctions correspond to well-defined p-n junction diodes. The p-n junction devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The horizontally assembled gallium nitride nanowire diodes suspended over the electrodes exhibited a substantial increase in conductance under UV light exposure. Apart from the selectivity to different light wavelengths, high responsivity and extremely short response time have also been obtained.

  9. Adsorption of human insulin on single-crystal gold surfaces investigated by in situ scanning tunnelling microscopy and electrochemistry

    DEFF Research Database (Denmark)

    Welinder, Anna Christina; Zhang, Jingdong; Steensgaard, D.B.

    2010-01-01

    We have explored the adsorption of zinc-free human insulin on the three low-index single-crystalline Au(111)-, Au(100)- and Au(110)-surfaces in aqueous buffer (KH2PO4, pH 5) by a combination of electrochemical scanning tunnelling microscopy (in situ STM) at single-molecule resolution and linear...... sweep, LSV, cyclic, CV, and square wave (SQWV) voltammetry. Multifarious electrochemical patterns were observed. Most attention was given to reductive desorption caused by insulin binding to the Au-surfaces via up to three disulfide groups per insulin monomer, presumably converted to single Au-S links...

  10. Electrical transport and photovoltaic effects of core-shell CuO/C60 nanowire heterostructure.

    Science.gov (United States)

    Bao, Qiaoliang; Li, Chang Ming; Liao, Lei; Yang, Hongbin; Wang, Wei; Ke, Chang; Song, Qunliang; Bao, Haifeng; Yu, Ting; Loh, Kian Ping; Guo, Jun

    2009-02-11

    An organic/inorganic hybrid heterostructure consisting of p-type CuO nanowire core and n-type C(60) shell was fabricated and its electrical transport properties were studied for the first time. It was found that the devices with contacts on shell-shell show an ohmic behavior but the devices with contacts on core-shell forms a single p-n junction and display a rectifying behavior. Logarithmic current-voltage curves at various temperatures show that the tunneling transport plays a critical role in the electrical transport. Photovoltaic effects were observed in the core-shell contacted CuO/C(60) junctions under illumination. This work demonstrates that an inorganic/organic coaxial nanowire can provide potential in nanoelectronic devices and could further stack high density hybrid nanowires array as a renewable power source.

  11. Electrical transport and photovoltaic effects of core-shell CuO/C60 nanowire heterostructure

    International Nuclear Information System (INIS)

    Bao Qiaoliang; Li Changming; Yang Hongbin; Wang Wei; Song Qunliang; Bao Haifeng; Liao Lei; Yu Ting; Ke Chang; Loh, K P; Guo Jun

    2009-01-01

    An organic/inorganic hybrid heterostructure consisting of p-type CuO nanowire core and n-type C 60 shell was fabricated and its electrical transport properties were studied for the first time. It was found that the devices with contacts on shell-shell show an ohmic behavior but the devices with contacts on core-shell forms a single p-n junction and display a rectifying behavior. Logarithmic current-voltage curves at various temperatures show that the tunneling transport plays a critical role in the electrical transport. Photovoltaic effects were observed in the core-shell contacted CuO/C 60 junctions under illumination. This work demonstrates that an inorganic/organic coaxial nanowire can provide potential in nanoelectronic devices and could further stack high density hybrid nanowires array as a renewable power source.

  12. Electrical transport and photovoltaic effects of core-shell CuO/C60 nanowire heterostructure

    Science.gov (United States)

    Bao, Qiaoliang; Li, Chang Ming; Liao, Lei; Yang, Hongbin; Wang, Wei; Ke, Chang; Song, Qunliang; Bao, Haifeng; Yu, Ting; Loh, Kian Ping; Guo, Jun

    2009-02-01

    An organic/inorganic hybrid heterostructure consisting of p-type CuO nanowire core and n-type C60 shell was fabricated and its electrical transport properties were studied for the first time. It was found that the devices with contacts on shell-shell show an ohmic behavior but the devices with contacts on core-shell forms a single p-n junction and display a rectifying behavior. Logarithmic current-voltage curves at various temperatures show that the tunneling transport plays a critical role in the electrical transport. Photovoltaic effects were observed in the core-shell contacted CuO/C60 junctions under illumination. This work demonstrates that an inorganic/organic coaxial nanowire can provide potential in nanoelectronic devices and could further stack high density hybrid nanowires array as a renewable power source.

  13. Recognition tunneling

    International Nuclear Information System (INIS)

    Lindsay, Stuart; He Jin; Zhang Peiming; Chang Shuai; Huang Shuo; Sankey, Otto; Hapala, Prokop; Jelinek, Pavel

    2010-01-01

    Single molecules in a tunnel junction can now be interrogated reliably using chemically functionalized electrodes. Monitoring stochastic bonding fluctuations between a ligand bound to one electrode and its target bound to a second electrode ('tethered molecule-pair' configuration) gives insight into the nature of the intermolecular bonding at a single molecule-pair level, and defines the requirements for reproducible tunneling data. Simulations show that there is an instability in the tunnel gap at large currents, and this results in a multiplicity of contacts with a corresponding spread in the measured currents. At small currents (i.e. large gaps) the gap is stable, and functionalizing a pair of electrodes with recognition reagents (the 'free-analyte' configuration) can generate a distinct tunneling signal when an analyte molecule is trapped in the gap. This opens up a new interface between chemistry and electronics with immediate implications for rapid sequencing of single DNA molecules. (topical review)

  14. Recognition tunneling

    Energy Technology Data Exchange (ETDEWEB)

    Lindsay, Stuart; He Jin; Zhang Peiming; Chang Shuai; Huang Shuo [Biodesign Institute, Arizona State University, Tempe, AZ 85287 (United States); Sankey, Otto [Department of Physics, Arizona State University, Tempe, AZ 85287 (United States); Hapala, Prokop; Jelinek, Pavel [Institute of Physics, Academy of Sciences of the Czech Republic, Cukrovarnicka 10, 1862 53, Prague (Czech Republic)

    2010-07-02

    Single molecules in a tunnel junction can now be interrogated reliably using chemically functionalized electrodes. Monitoring stochastic bonding fluctuations between a ligand bound to one electrode and its target bound to a second electrode ('tethered molecule-pair' configuration) gives insight into the nature of the intermolecular bonding at a single molecule-pair level, and defines the requirements for reproducible tunneling data. Simulations show that there is an instability in the tunnel gap at large currents, and this results in a multiplicity of contacts with a corresponding spread in the measured currents. At small currents (i.e. large gaps) the gap is stable, and functionalizing a pair of electrodes with recognition reagents (the 'free-analyte' configuration) can generate a distinct tunneling signal when an analyte molecule is trapped in the gap. This opens up a new interface between chemistry and electronics with immediate implications for rapid sequencing of single DNA molecules. (topical review)

  15. Absence of a spin-signature from a single Ho adatom as probed by spin-sensitive tunneling.

    Science.gov (United States)

    Steinbrecher, M; Sonntag, A; dos Santos Dias, M; Bouhassoune, M; Lounis, S; Wiebe, J; Wiesendanger, R; Khajetoorians, A A

    2016-02-03

    Whether rare-earth materials can be used as single-atom magnetic memory is an ongoing debate in recent literature. Here we show, by inelastic and spin-resolved scanning tunnelling-based methods, that we observe a strong magnetic signal and excitation from Fe atoms adsorbed on Pt(111), but see no signatures of magnetic excitation or spin-based telegraph noise for Ho atoms. Moreover, we observe that the indirect exchange field produced by a single Ho atom is negligible, as sensed by nearby Fe atoms. We demonstrate, using ab initio methods, that this stems from a comparatively weak coupling of the Ho 4f electrons with both tunnelling electrons and substrate-derived itinerant electrons, making both magnetic coupling and detection very difficult when compared to 3d elements. We discuss these results in the context of ongoing disputes and clarify important controversies.

  16. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  17. Single-Incision Carpal Tunnel Release and Distal Radius Open Reduction and Internal Fixation: A Cadaveric Study.

    Science.gov (United States)

    Gaspar, Michael P; Sessions, Blane A; Dudoussat, Bryan S; Kane, Patrick M

    2016-08-01

    The safety of surgical approaches for single- versus double-incision carpal tunnel release in association with distal radius open reduction and internal fixation remains controversial. The purpose of this study was to identify critical structures to determine if a single-incision extension of the standard flexor carpi radialis (FCR) approach can be performed safely. Nine cadaveric arms with were dissected under loupe magnification, utilizing a standard FCR approach. After the distal radius exposure was complete, the distal portion of the FCR incision was extended to allow release of the carpal tunnel. Dissection of critical structures was performed, including the recurrent thenar motor branch of the median nerve, the palmar cutaneous branch of the median nerve (PCBm), the palmar carpal and superficial palmar branches of the radial artery, and proximally the median nerve proper. The anatomic relationship of these structures relative to the surgical approach was recorded. Extension of the standard FCR approach as described in this study did not damage any critical structure in the specimens dissected. The PCBm was noted to arise from the radial side of the median nerve an average of 6.01cm proximal to the proximal edge of the transverse carpal ligament. The PCBm became enveloped in the layers of the antebrachial fascia and the transverse carpal ligament at the incision site, protecting it from injury. The recurrent motor branch of the median nerve, branches of the radial artery and the median nerve proper were not at risk during extension of the FCR approach to release the carpal tunnel. Extension of the standard FCR approach to include carpal tunnel release can be performed with minimal risk to the underlying structures. This exposure may offer benefits in both visualization and extent of carpal tunnel release.

  18. Topological Insulator Nanowires and Nanoribbons

    Energy Technology Data Exchange (ETDEWEB)

    Kong, D.S.

    2010-06-02

    Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi{sub 2}Se{sub 3} material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi{sub 2}Se{sub 3} nanomaterials with a variety of morphologies. The synthesis of Bi{sub 2}Se{sub 3} nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [11-20] direction with a rectangular crosssection and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with {approx}1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitals to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states.

  19. Special structures and properties of hydrogen nanowire confined in a single walled carbon nanotube at extreme high pressure

    Directory of Open Access Journals (Sweden)

    Yueyuan Xia

    2012-06-01

    Full Text Available Extensive ab initio molecular dynamics simulations indicate that hydrogen can be confined in single walled carbon nanotubes to form high density and high pressure H2 molecular lattice, which has peculiar shell and axial structures depending on the density or pressure. The band gap of the confined H2 lattice is sensitive to the pressure. Heating the system at 2000K, the H2 lattice is firstly melted to form H2 molecular liquid, and then some of the H2 molecules dissociate accompanied by drastic molecular and atomic reactions, which have essential effect on the electronic structure of the hydrogen system. The liquid hydrogen system at 2000K is found to be a particular mixed liquid, which consists of H2 molecules, H atoms, and H-H-H trimers. The dissociated H atoms and the trimers in the liquid contribute resonance electron states at the Fermi energy to change the material properties substantially. Rapidly cooling the system from 2000K to 0.01 K, the mixed liquid is frozen to form a mixed solid melt with a clear trend of band gap closure. It indicates that this solid melt may become a superconducting nanowire when it is further compressed.

  20. Spectroscopic characterizations of individual single-crystalline GaN nanowires in visible/ultra-violet regime.

    Science.gov (United States)

    Wu, Chien-Ting; Chu, Ming-Wen; Chen, Li-Chyong; Chen, Kuei-Hsien; Chen, Chun-Wei; Chen, Cheng Hsuan

    2010-10-01

    Spectroscopic investigations of individual single-crystalline GaN nanowires with a lateral dimensions of approximately 30-90nm were performed using the spatially resolved technique of electron energy-loss spectroscopy in conjunction with scanning transmission electron microscope showing a 2-A electron probe. Positioning the electron probe upon transmission impact and at aloof setup with respect to the nanomaterials, we explored two types of surface modes intrinsic to GaN, surface exciton polaritons at approximately 8.3eV (approximately 150nm) and surface guided modes at 3.88eV (approximately 320nm), which are in visible/ultra-violet spectral regime above GaN bandgap of approximately 3.3eV (approximately 375nm) and difficult to access by conventional optical spectroscopies. The explorations of these electromagnetic resonances might expand the current technical interests in GaN nanomaterials from the visible/UV range below approximately 3.5eV to the spectral regime further beyond.

  1. Single In x Ga1-x As nanowire/p-Si heterojunction based nano-rectifier diode

    Science.gov (United States)

    Sarkar, K.; Palit, M.; Guhathakurata, S.; Chattopadhyay, S.; Banerji, P.

    2017-09-01

    Nanoscale power supply units will be indispensable for fabricating next generation smart nanoelectronic integrated circuits. Fabrication of nanoscale rectifier circuits on a Si platform is required for integrating nanoelectronic devices with on-chip power supply units. In the present study, a nanorectifier diode based on a single standalone In x Ga1-x As nanowire/p-Si (111) heterojunction fabricated by metal organic chemical vapor deposition technique has been studied. The nanoheterojunction diodes have shown good rectification and fast switching characteristics. The rectification characteristics of the nanoheterojunction have been demonstrated by different standard waveforms of sinusoidal, square, sawtooth and triangular for two different frequencies of 1 and 0.1 Hz. Reverse recovery time of around 150 ms has been observed in all wave response. A half wave rectifier circuit with a simple capacitor filter has been assembled with this nanoheterojunction diode which provides 12% output efficiency. The transport of carriers through the heterojunction is investigated. The interface states density of the nanoheterojunction has also been determined. Occurrence of output waveforms incommensurate with the input is attributed to higher series resistance of the diode which is further explained considering the dimension of p-side and n-side of the junction. The sudden change of ideality factor after 1.7 V bias is attributed to recombination through interface states in space charge region. Low interface states density as well as high rectification ratio makes this heterojunction diode a promising candidate for future nanoscale electronics.

  2. A molecular dynamics study on the thermal conductivity of endohedrally functionalized single-walled carbon nanotubes with gold nanowires

    Science.gov (United States)

    Ajori, Shahram; Haghighi, Samieh; Ansari, Reza

    2018-02-01

    The thermal conductivity of endohedrally functionalized single-walled carbon nanotubes (SWCNTs) with gold nanowires (GNWs) is studied by using a series of molecular dynamics (MD) simulations. The effect of geometrical parameters, i.e. length and radius of pure SWCNTs/GNWs/SWCNTs filled with GNWs on the thermal conductivity are investigated. Also, the influence of various structures of GNWs such as pentagonal and multishell-GNWs on the thermal conductivity of the system is explored. The results indicate that as the length of the system rises, the thermal conductivity increases. It is also found that the thermal conductivity of GNWs is considerably lower than that of pure SWCNTs and GNWs@SWCNTs at a constant length of SWCNT or GNWs. For long pure SWCNTs, by increasing the radii of nanotubes, the thermal conductivity increases. Moreover, the thermal conductivity of the multishell-GNWs@SWCNTs is obtained higher than that of pentagonal configurations for the same lengths of SWCNTs. Through inserting the GNWs inside the SWCNTs, by maintaining the natural properties of NWs due to endohedral functionalization, the thermal conductivity is increased. This finding can be used as a benchmark for more efficient design of NEMS based on metallic NWs.

  3. Ultrafast terahertz control of extreme tunnel currents through single atoms on a silicon surface

    DEFF Research Database (Denmark)

    Jelic, Vedran; Iwaszczuk, Krzysztof; Nguyen, Peter H.

    2017-01-01

    Ultrafast control of current on the atomic scale is essential for future innovations in nanoelectronics. Extremely localized transient electric fields on the nanoscale can be achieved by coupling picosecond duration terahertz pulses to metallic nanostructures. Here, we demonstrate terahertz...... scanning tunnelling microscopy (THz-STM) in ultrahigh vacuum as a new platform for exploring ultrafast non-equilibrium tunnelling dynamics with atomic precision. Extreme terahertz-pulse-driven tunnel currents up to 10(7) times larger than steady-state currents in conventional STM are used to image...... individual atoms on a silicon surface with 0.3nm spatial resolution. At terahertz frequencies, the metallic-like Si(111)-(7 x 7) surface is unable to screen the electric field from the bulk, resulting in a terahertz tunnel conductance that is fundamentally different than that of the steady state. Ultrafast...

  4. Single-electron charging effects and implications for tunneling measurements of the high-T/sub c/ superconductors

    International Nuclear Information System (INIS)

    Barner, J.B.; Honkanen, M.J.; Ruggiero, S.T.; Mullen, K.; Ben-Jacob, E.; Pelton, A.R.; Michigan Univ., Ann Arbor, MI

    1989-01-01

    The authors present a theory for the dynamics of two voltage-biased, ultra-small-capacitance tunnel junctions connected in series when one or more electrodes are superconducting and experiments performed on parallel arrays of such junctions. Using the semiclassical model, they find that the I-V characteristics display steps and therefore multiple peaks in dI/dV, corresponding to the time-average occupation of the interjunction region by integral numbers of electrons. The voltage at which the first step is located depends on the superconducting gap, Δ(T), and the capacitances of the junctions. The spacing between subsequent steps depends solely on the capacitances. They discuss electron tunneling results performed on metal/Al/sub 2/O/sub 3//2-10 nm-diameter metal particles/Al/sub 2/O/sub 3//metal junctions where this multiple-peak structure is observed. They present preliminary tunneling results in junctions employing Pb-particles, where they observe a shift of the peaks when the sample is cooled below T/sub c/ of Pb consistent with theory. Taken together, these results indicate that the multiple-peak structure commonly observed in tunneling data of high-T/sub c/ oxide superconductors can be explained in terms of charging effects in a material with a single superconducting gap. Finally, they discuss possible applications in a new type of transistor element

  5. Coexistence of optically active radial and axial CdTe insertions in single ZnTe nanowire

    Science.gov (United States)

    Wojnar, P.; Płachta, J.; Zaleszczyk, W.; Kret, S.; Sanchez, Ana M.; Rudniewski, R.; Raczkowska, K.; Szymura, M.; Karczewski, G.; Baczewski, L. T.; Pietruczik, A.; Wojtowicz, T.; Kossut, J.

    2016-03-01

    We report on the growth, cathodoluminescence and micro-photoluminescence of individual radial and axial CdTe insertions in ZnTe nanowires. In particular, the cathodoluminescence technique is used to determine the position of each emitting object inside the nanowire. It is demonstrated that depending on the CdTe deposition temperature, one can obtain an emission either from axial CdTe insertions only, or from both, radial and axial heterostructures, simultaneously. At 350 °C CdTe grows only axially, whereas at 310 °C and 290 °C, there is also significant deposition on the nanowire sidewalls resulting in radial core/shell heterostructures. The presence of Cd atoms on the sidewalls is confirmed by energy dispersive X-ray spectroscopy. Micro-photoluminescence study reveals a strong linear polarization of the emission from both types of heterostructures in the direction along the nanowire axis.We report on the growth, cathodoluminescence and micro-photoluminescence of individual radial and axial CdTe insertions in ZnTe nanowires. In particular, the cathodoluminescence technique is used to determine the position of each emitting object inside the nanowire. It is demonstrated that depending on the CdTe deposition temperature, one can obtain an emission either from axial CdTe insertions only, or from both, radial and axial heterostructures, simultaneously. At 350 °C CdTe grows only axially, whereas at 310 °C and 290 °C, there is also significant deposition on the nanowire sidewalls resulting in radial core/shell heterostructures. The presence of Cd atoms on the sidewalls is confirmed by energy dispersive X-ray spectroscopy. Micro-photoluminescence study reveals a strong linear polarization of the emission from both types of heterostructures in the direction along the nanowire axis. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr08806b

  6. Silver nanowires - unique templates for functional nanostructures

    Science.gov (United States)

    Sun, Yugang

    2010-09-01

    This feature article reviews the synthesis and application of silver nanowires with the focus on a polyol process that is capable of producing high quality silver nanowires with high yield. The as-synthesized silver nanowires can be used as both physical templates for the synthesis of metal/dielectric core/shell nanowires and chemical templates for the synthesis of metal nanotubes as well as semiconductor nanowires. Typical examples including Ag/SiO2 coaxial nanocables, single- and multiple-walled nanotubes made of Au-Ag alloy, AgCl nanowires and AgCl/Au core/shell nanowires are discussed in detail to illustrate the versatility of nanostructures derived from silver nanowire templates. Novel properties associated with these one-dimensional nanostructures are also briefly discussed to shed the light on their potential applications in electronics, photonics, optoelectronics, catalysis, and medicine.

  7. Seismic Design of a Single Bored Tunnel: Longitudinal Deformations and Seismic Joints

    Science.gov (United States)

    Oh, J.; Moon, T.

    2018-03-01

    The large diameter bored tunnel passing through rock and alluvial deposits subjected to seismic loading is analyzed for estimating longitudinal deformations and member forces on the segmental tunnel liners. The project site has challenges including high hydrostatic pressure, variable ground profile and high seismic loading. To ensure the safety of segmental tunnel liner from the seismic demands, the performance-based two-level design earthquake approach, Functional Evaluation Earthquake and Safety Evaluation Earthquake, has been adopted. The longitudinal tunnel and ground response seismic analyses are performed using a three-dimensional quasi-static linear elastic and nonlinear elastic discrete beam-spring elements to represent segmental liner and ground spring, respectively. Three components (longitudinal, transverse and vertical) of free-field ground displacement-time histories evaluated from site response analyses considering wave passage effects have been applied at the end support of the strain-compatible ground springs. The result of the longitudinal seismic analyses suggests that seismic joint for the mitigation measure requiring the design deflection capacity of 5-7.5 cm is to be furnished at the transition zone between hard and soft ground condition where the maximum member forces on the segmental liner (i.e., axial, shear forces and bending moments) are induced. The paper illustrates how detailed numerical analyses can be practically applied to evaluate the axial and curvature deformations along the tunnel alignment under difficult ground conditions and to provide the seismic joints at proper locations to effectively reduce the seismic demands below the allowable levels.

  8. Transparent Flash Memory Using Single Ta2O5Layer for Both Charge-Trapping and Tunneling Dielectrics.

    Science.gov (United States)

    Hota, Mrinal K; Alshammari, Fwzah H; Salama, Khaled N; Alshareef, Husam N

    2017-07-05

    We report reproducible multibit transparent flash memory in which a single solution-derived Ta 2 O 5 layer is used simultaneously as a charge-trapping layer and a tunneling layer. This is different from conventional flash memory cells where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ∼10.7 V. Moreover, the flash memory device shows a stable 2-bit memory performance and good reliability, including data retention for more than 10 4 s and endurance performance for more than 100 cycles. The use of a common charge-trapping and tunneling layer can simplify the fabrication of advanced flash memories.

  9. Landau-Zener tunneling in the presence of weak intermolecular interactions in a crystal of Mn4 single-molecule magnets

    Science.gov (United States)

    Wernsdorfer, W.; Bhaduri, S.; Vinslava, A.; Christou, G.

    2005-12-01

    A Mn4 single-molecule magnet (SMM), with a well-isolated spin ground state of S=9/2 , is used as a model system to study Landau-Zener (LZ) tunneling in the presence of weak intermolecular dipolar and exchange interactions. The anisotropy constants D and B are measured with minor hysteresis loops. A transverse field is used to tune the tunnel splitting over a large range. Using the LZ and inverse LZ method, it is shown that these interactions play an important role in the tunnel rates. Three regions are identified: (i) at small transverse fields, tunneling is dominated by single tunnel transitions, (ii) at intermediate transverse fields, the measured tunnel rates are governed by reshuffling of internal fields, and (iii) at larger transverse fields, the magnetization reversal starts to be influenced by the direct relaxation process, and many-body tunnel events may occur. The hole digging method is used to study the next-nearest-neighbor interactions. At small external fields, it is shown that magnetic ordering occurs which does not quench tunneling. An applied transverse field can increase the ordering rate. Spin-spin cross-relaxations, mediated by dipolar and weak exchange interactions, are proposed to explain additional quantum steps.

  10. Near-unity efficiency, single-photon sources based on tapered photonic nanowires

    DEFF Research Database (Denmark)

    Bleuse, Joël; Munsch, Mathieu; Claudon, Julien

    2012-01-01

    Single-photon emission from excitons in InAs Quantum Dots (QD) embedded in GaAs Tapered Photonic Wires (TPW) already demonstrated a 0.72 collection efficiency, with TPWs were the apex is the sharp end of the cone. Going to alternate designs, still based on the idea of the adiabatic deconfinement...

  11. Highly efficient photonic nanowire single-photon sources for quantum information applications

    DEFF Research Database (Denmark)

    Gregersen, Niels; Claudon, J.; Munsch, M.

    2013-01-01

    must feature near-unity efficiency, where the efficiency is defined as the number of detected photons per trigger, the probability g(2)(τ=0) of multi-photon emission events should be 0 and the emitted photons are required to be indistinguishable. An optically or electrically triggered quantum light......Within the emerging field of optical quantum information processing, the current challenge is to construct the basic building blocks for the quantum computing and communication systems. A key component is the singlephoton source (SPS) capable of emitting single photons on demand. Ideally, the SPS...... emitter, e.g. a nitrogen-vacancy center or a semiconductor quantum dot (QD), embedded in a solid-state semiconductor host material appears as an attractive platform for generating such single photons. However, for a QD in bulk material, the large index contrast at the semiconductor-air interface leads...

  12. High magnetic field reveals the nature of excitons in a single GaAs/AlAs core/shell nanowire.

    Science.gov (United States)

    Plochocka, P; Mitioglu, A A; Maude, D K; Rikken, G L J A; del Águila, A Granados; Christianen, P C M; Kacman, P; Shtrikman, Hadas

    2013-06-12

    Magneto-photoluminescence measurements of individual zinc-blende GaAs/AlAs core/shell nanowires are reported. At low temperature, a strong emission line at 1.507 eV is observed under low power (nW) excitation. Measurements performed in high magnetic field allowed us to detect in this emission several lines associated with excitons bound to defect pairs. Such lines were observed before in epitaxial GaAs of very high quality, as reported by Kunzel and Ploog. This demonstrates that the optical quality of our GaAs/AlAs core/shell nanowires is comparable to the best GaAs layers grown by molecular beam epitaxy. Moreover, strong free exciton emission is observed even at room temperature. The bright optical emission of our nanowires in room temperature should open the way for numerous optoelectronic device applications.

  13. Single-centre experience with tunnelled central venous catheters in 150 cancer patients

    NARCIS (Netherlands)

    Koolen, D. A.; van Laarhoven, H. W. M.; Wobbes, Th; Punt, C. J. A.

    2002-01-01

    Tunnelled venous catheters improve venous access in cancer patients, but are associated with complications. We retrospectively analysed the outcome of Hickman catheter and Port-A-Cath (PAC) insertion in cancer patients from a department of medical oncology and compared these results with the

  14. Angular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments

    KAUST Repository

    Mohammed, Hanan

    2017-06-22

    Magnetization reversal in segmented Co/Ni nanowires with varying number of segments was studied using angular Magnetoresistance (MR) measurements on isolated nanowires. The MR measurements offer an insight into the pinning of domain walls within the nanowires. Angular MR measurements were performed on nanowires with two and multiple segments by varying the angle between the applied magnetic field and nanowire (−90° ≤θ≤90°). The angular MR measurements reveal that at lower values of θ the switching fields are nearly identical for the multisegmented and two-segmented nanowires, whereas at higher values of θ, a decrease in the switching field is observed in the case of two segmented nanowires. The two segmented nanowires generally exhibit a single domain wall pinning event, whereas an increased number of pinning events are characteristic of the multisegmented nanowires at higher values of θ. In-situ magnetic force microscopy substantiates reversal by domain wall nucleation and propagation in multisegmented nanowires.

  15. Examining the effect of adverse geological conditions on jamming of a single shielded TBM in Uluabat tunnel using numerical modeling

    Directory of Open Access Journals (Sweden)

    Rohola Hasanpour

    2017-12-01

    Full Text Available Severe shield jamming events have been reported during excavation of Uluabat tunnel through adverse geological conditions, which resulted in several stoppages at advancing a single shielded tunnel boring machine (TBM. To study the jamming mechanism, three-dimensional (3D simulation of the machine and surrounding ground was implemented using the finite difference code FLAC3D. Numerical analyses were performed for three sections along the tunnel with a higher risk for entrapment due to the combination of overburden and geological conditions. The computational results including longitudinal displacement contours and ground pressure profiles around the shield allow a better understanding of ground behavior within the excavation. Furthermore, they allow realistically assessing the impact of adverse geological conditions on shield jamming. The calculated thrust forces, which are required to move the machine forward, are in good agreement with field observations and measurements. It also proves that the numerical analysis can effectively be used for evaluating the effect of adverse geological environment on TBM entrapments and can be applied to prediction of loads on the shield and pre-estimating of the required thrust force during excavation through adverse ground conditions.

  16. Semiconductor nanowires and templates for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Ying, Xiang

    2009-07-15

    This thesis starts by developing a platform for the organized growth of nanowires directly on a planar substrate. For this, a method to fabricate horizontal porous alumina membranes is studied. The second part of the thesis focuses on the study of nanowires. It starts by the understanding of the growth mechanisms of germanium nanowires and follows by the structural and electrical properties at the single nanowire level. Horizontally aligned porous anodic alumina (PAA) was used as a template for the nanowire synthesis. Three PAA arrangements were studied: - high density membranes - micron-sized fingers - multi-contacts Membranes formed by a high density of nanopores were obtained by anodizing aluminum thin films. Metallic and semiconducting nanowires were synthesized into the PAA structures via DC deposition, pulsed electro-depostion and CVD growth. The presence of gold, copper, indium, nickel, tellurium, and silicon nanowires inside PAA templates was verified by SEM and EDX analysis. Further, room-temperature transport measurements showed that the pores are completely filled till the bottom of the pores. In this dissertation, single crystalline and core-shell germanium nanowires are synthesized using indium and bismuth as catalyst in a chemical vapor deposition procedure with germane (GeH{sub 4}) as growth precursor. A systematic growth study has been performed to obtain high aspect-ratio germanium nanowires. The influence of the growth conditions on the final morphology and the crystalline structure has been determined via scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). In the case of indium catalyzed germanium nanowires, two different structures were identified: single crystalline and crystalline core-amorphous shell. The preferential growth axis of both kinds of nanowires is along the [110] direction. The occurrence of the two morphologies was found to only depend on the nanowire dimension. In the case of bismuth

  17. Precise Placement of Metallic Nanowires on a Substrate by Localized Electric Fields and Inter-Nanowire Electrostatic Interaction

    Directory of Open Access Journals (Sweden)

    U Hyeok Choi

    2017-10-01

    Full Text Available Placing nanowires at the predetermined locations on a substrate represents one of the significant hurdles to be tackled for realization of heterogeneous nanowire systems. Here, we demonstrate spatially-controlled assembly of a single nanowire at the photolithographically recessed region at the electrode gap with high integration yield (~90%. Two popular routes, such as protruding electrode tips and recessed wells, for spatially-controlled nanowire alignment, are compared to investigate long-range dielectrophoretic nanowire attraction and short-range nanowire-nanowire electrostatic interaction for determining the final alignment of attracted nanowires. Furthermore, the post-assembly process has been developed and tested to make a robust electrical contact to the assembled nanowires, which removes any misaligned ones and connects the nanowires to the underlying electrodes of circuit.

  18. Energy relaxation between low lying tunnel split spin-states of the single molecule magnet Ni4

    Science.gov (United States)

    de Loubens, G.; Chaves-O'Flynn, G. D.; Kent, A. D.; Ramsey, C.; Del Barco, E.; Beedle, C.; Hendrickson, D. N.

    2007-03-01

    We have developed integrated magnetic sensors to study quantum tunneling of magnetization (QTM) in single molecule magnet (SMMs) single crystals. These sensors incorporate a microstrip resonator (30 GHz) and a micro-Hall effect magnetometer. They have been used to investigate the relaxation rates between the 2 lowest lying tunnel split spin-states of the SMM Ni4 (S=4). EPR spectroscopy at 30 GHz and 0.4 K and concurrent magnetization measurements of several Ni4 single crystals are presented. EPR enables measurement of the energy splitting between the 2 lowest lying superposition states as a function of the longitudinal and transverse fields. The energy relaxation rate is determined in two ways. First, in cw microwave experiments the change in spin-population together with the microwave absorption directly gives the relaxation time from energy conservation in steady-state. Second, direct time-resolved measurements of the magnetization with pulsed microwave radiation have been performed. The relaxation time is found to vary by several orders of magnitude in different crystals, from a few seconds down to smaller than 100 μs. We discuss this and the form of the relaxation found for different crystals and pulse conditions.

  19. Synthesis and properties of antimonide nanowires

    Science.gov (United States)

    Mattias Borg, B.; Wernersson, Lars-Erik

    2013-05-01

    Antimonide semiconductors are suitable for low-power electronics and long-wavelength optoelectronic applications. In recent years research on antimonide nanowires has become a rapidly growing field, and nano-materials have promising applications in fundamental physics research, for tunnel field-effect transistors, and long-wavelength detectors. In this review, we give an overview of the field of antimonide nanowires, beginning with a description of the synthesis of these nano-materials. Here we summarize numerous reports on antimonide nanowire growth, with the aim to give an overall picture of the distinctive properties of antimonide nanowire synthesis. Secondly, we review the data on the physical properties and emerging applications for antimonide nanowires, focusing on applications in electronics and optics.

  20. Phonon Confinement Induced Non-Concomitant Near-Infrared Emission along a Single ZnO Nanowire: Spatial Evolution Study of Phononic and Photonic Properties

    Directory of Open Access Journals (Sweden)

    Po-Hsun Shih

    2017-10-01

    Full Text Available The impact of mixed defects on ZnO phononic and photonic properties at the nanoscale is only now being investigated. Here we report an effective strategy to study the distribution of defects along the growth direction of a single ZnO nanowire (NW, performed qualitatively as well as quantitatively using energy dispersive spectroscopy (EDS, confocal Raman-, and photoluminescence (PL-mapping technique. A non-concomitant near-infrared (NIR emission of 1.53 ± 0.01 eV was observed near the bottom region of 2.05 ± 0.05 μm along a single ZnO NW and could be successfully explained by the radiative recombination of shallowly trapped electrons V_O^(** with deeply trapped holes at V_Zn^''. A linear chain model modified from a phonon confinement model was used to describe the growth of short-range correlations between the mean distance of defects and its evolution with spatial position along the axial growth direction by fitting the E2H mode. Our results are expected to provide new insights into improving the study of the photonic and photonic properties of a single nanowire.

  1. Molecular electronics of a single photosystem I reaction center: Studies with scanning tunneling microscopy and spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, I.; Lee, J.W.; Warmack, R.J.; Allison, D.P.; Greenbaum, E. [Oak Ridge National Lab., TN (United States)

    1995-03-14

    Thylakoids and photosystem I (PSI) reaction centers were imaged by scanning tunneling microscopy. The thylakoids were isolated from spinach chloroplasts, and PSI reaction centers were extracted from thylakoid membranes. Because thylakoids are relatively thick nonconductors, they were sputter-coated with Pd/Au before imaging. PSI photosynthetic centers and chemically platinized PSI were investigated without sputter-coating. They were mounted on flat gold substrates that had been treated with mercaptoacetic acid to help bind the proteins. With tunneling spectroscopy, the PSI centers displayed a semiconductor-like response with a band gap of 1.8 eV. Lightly platinized (platinized for 1 hr) centers displayed diode-like conduction that resulted in dramatic contrast changes between images taken with opposite bias voltages. The electronic properties of this system were stable under long-term storage. 42 refs., 7 figs.

  2. Design model for bending vibrations of single-stage tunnel fan rotor

    Science.gov (United States)

    Krasyuk, AM; Kosykh, PV

    2018-03-01

    Using of one-mass model of tunnel fan rotor is justified for estimation calculation of the natural bending vibrations frequency during the design stage. It’s shown that the evaluative computation of the main axial tunnel fan at the early design stage yields the acceptable accuracy. It is shown that after completion of the design, the mass of the stepped-type shaft differs from the mass of the calculated uniform-diameter shaft no more than by 40%. Inclusion of this additional mass in the estimation calculation makes it possible to improve the calculation accuracy. The region of the dimensionless rotor design parameters at which the relative difference of frequency in the evaluative and verification calculations is not higher than 5 % is determined.

  3. Synthesis of single crystal manganese oxide octahedral molecular sieve (OMS) nanostructures with tunable tunnels and shapes.

    Science.gov (United States)

    Li, Wei-Na; Yuan, Jikang; Gomez-Mower, Sinue; Sithambaram, Shantakumar; Suib, Steven L

    2006-02-23

    A new and facile route is reported to manipulate the self-assembly synthesis of hierarchically ordered Rb-OMS-2 and pyrolusite with an interesting flowerlike morphology by a direct and mild reaction between rubidium chromateand manganese sulfate without any organic templates. The crystal forms, morphologies, and tunnel sizes of the obtained OMS materials can be controlled. A mechanism for the growth of manganese dioxides with flowerlike architectures was proposed. The obtained products exhibit potential for use in catalysis and other applications.

  4. Single-dopant resonance in a single-electron transistor

    Science.gov (United States)

    Golovach, V. N.; Jehl, X.; Houzet, M.; Pierre, M.; Roche, B.; Sanquer, M.; Glazman, L. I.

    2011-02-01

    Single dopants in semiconductor nanostructures have been studied in great detail recently as they are good candidates for quantum bits, provided they are coupled to a detector. Here we report the coupling of a single As donor atom to a single-electron transistor (SET) in a silicon nanowire field-effect transistor. Both capacitive and tunnel coupling are achieved, the latter resulting in a dramatic increase of the conductance through the SET, by up to one order of magnitude. The experimental results are well explained by the rate-equation theory developed in parallel with the experiment.

  5. Vertically aligned nanowires from boron-doped diamond.

    Science.gov (United States)

    Yang, Nianjun; Uetsuka, Hiroshi; Osawa, Eiji; Nebel, Christoph E

    2008-11-01

    Vertically aligned diamond nanowires with controlled geometrical properties like length and distance between wires were fabricated by use of nanodiamond particles as a hard mask and by use of reactive ion etching. The surface structure, electronic properties, and electrochemical functionalization of diamond nanowires were characterized by atomic force microscopy (AFM) and scanning tunneling microscopy (STM) as well as electrochemical techniques. AFM and STM experiments show that diamond nanowire etched for 10 s have wire-typed structures with 3-10 nm in length and with typically 11 nm spacing in between. The electrode active area of diamond nanowires is enhanced by a factor of 2. The functionalization of nanowire tips with nitrophenyl molecules is characterized by STM on clean and on nitrophenyl molecule-modified diamond nanowires. Tip-modified diamond nanowires are promising with respect to biosensor applications where controlled biomolecule bonding is required to improve chemical stability and sensing significantly.

  6. Electrically Injected UV-Visible Nanowire Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Wang, George T.; Li, Changyi; Li, Qiming; Liu, Sheng; Wright, Jeremy Benjamin; Brener, Igal; Luk, Ting -Shan; Chow, Weng W.; Leung, Benjamin; Figiel, Jeffrey J.; Koleske, Daniel D.; Lu, Tzu-Ming

    2015-09-01

    There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasers emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.

  7. Shape dependent synthesis and field emission induced rectification in single ZnS nanocrystals.

    Science.gov (United States)

    Thupakula, Umamahesh; Dalui, Amit; Debangshi, Anupam; Bal, Jayanta K; Kumar, Gundam S; Acharya, Somobrata

    2014-05-28

    We report on the synthesis of shape controlled ZnS nanocrystals designed into nanodots, nanorods, and nanowires retaining the same diameter and crystallographic phase. We used UHV scanning tunneling microscopy and spectroscopy to study rectification behavior from single nanocrystals. The nanorod and nanowire show large tunneling current at the negative bias in comparison to the positive bias demonstrating current rectification, while the nanodot shows symmetric current-voltage behavior. We proposed a tunneling mechanism where direct tunneling is followed by resonant tunneling mechanism through ZnS nanocrystal at lower applied bias voltages. Stimulation of field emission in Fowler-Nordheim tunneling regime at higher negative bias voltages enables the rectification behavior from the ZnS nanorod or nanowire. Absence of rectification from the ZnS nanodot is associated with spherical shape where the field emission becomes less significant. Realizing functional electronic component from such shape dependent single ZnS nanocrystal may provide a means in realizing nanocrystal based miniaturized devices.

  8. Safety and Efficacy of Single-site Phacotrabeculectomy With Mitomicin C Using Nylon and Polyglactin Suture for Scleral Tunnel Closure.

    Science.gov (United States)

    Vijaya, Lingam; David, Rathini L

    2015-01-01

    To evaluate the efficacy of polyglactin use along with nylon suture in scleral tunnel closure after single-site phacotrabeculectomy. This retrospective case series included 139 eyes of 139 patients who had scleral tunnel closure with 1 polyglactin and 1 nylon suture after single-site phacotrabeculectomy with a low dose of mitomycin C between 2002 and 2005. The intraocular pressure (IOP), the visual acuity, the number of glaucoma medications, postoperative complications, and interventions were the outcomes measured. The majority of them had primary open-angle glaucoma (93 eyes, 67%), 93 eyes (67%) had severe glaucomatous optic neuropathy, and 77 eyes (55.3%) had severe visual-field loss. The IOP decreased from a mean preoperative value of 18.1±5.3 mm Hg on a mean number of 1.8±0.8 glaucoma medications to mean IOPs of 13.3±4.6, 14.0±4.3, and 11.8±3.9 mm Hg on a mean number of 0.2±0.6, 0.3±0.7, 0.5±1.0 glaucoma medications (PNylon suturelysis with laser was performed in 16 eyes (11.5%). The technique used here seems to be effective in controlling the IOP and has very minimal associated complications.

  9. Consequences of Spin-Orbit Coupling at the Single Hole Level: Spin-Flip Tunneling and the Anisotropic g Factor.

    Science.gov (United States)

    Bogan, A; Studenikin, S A; Korkusinski, M; Aers, G C; Gaudreau, L; Zawadzki, P; Sachrajda, A S; Tracy, L A; Reno, J L; Hargett, T W

    2017-04-21

    Hole transport experiments were performed on a gated double quantum dot device defined in a p-GaAs/AlGaAs heterostructure with a single hole occupancy in each dot. The charging diagram of the device was mapped out using charge detection confirming that the single hole limit is reached. In that limit, a detailed study of the two-hole spin system was performed using high bias magnetotransport spectroscopy. In contrast to electron systems, the hole spin was found not to be conserved during interdot resonant tunneling. This allows one to fully map out the two-hole energy spectrum as a function of the magnitude and the direction of the external magnetic field. The heavy-hole g factor was extracted and shown to be strongly anisotropic, with a value of 1.45 for a perpendicular field and close to zero for an in-plane field as required for hybridizing schemes between spin and photonic quantum platforms.

  10. Hyperfine-Interaction-Driven Suppression of Quantum Tunneling at Zero Field in a Holmium(III) Single-Ion Magnet.

    Science.gov (United States)

    Chen, Yan-Cong; Liu, Jun-Liang; Wernsdorfer, Wolfgang; Liu, Dan; Chibotaru, Liviu F; Chen, Xiao-Ming; Tong, Ming-Liang

    2017-04-24

    An extremely rare non-Kramers holmium(III) single-ion magnet (SIM) is reported to be stabilized in the pentagonal-bipyramidal geometry by a phosphine oxide with a high energy barrier of 237(4) cm -1 . The suppression of the quantum tunneling of magnetization (QTM) at zero field and the hyperfine structures originating from field-induced QTMs can be observed even from the field-dependent alternating-current magnetic susceptibility in addition to single-crystal hysteresis loops. These dramatic dynamics were attributed to the combination of the favorable crystal-field environment and the hyperfine interactions arising from 165 Ho (I=7/2) with a natural abundance of 100 %. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Hyperfine-interaction-driven suppression of quantum tunneling at zero field in a holmium(III) single-ion magnet

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yan-Cong; Liu, Jun-Liang; Chen, Xiao-Ming; Tong, Ming-Liang [Key Lab. of Bioinorganic and Synthetic Chemistry of Ministry of Education, School of Chemistry, Sun Yat-Sen Univ., Guangzhou (China); Wernsdorfer, Wolfgang [Institut Neel, CNRS and Universite Joseph Fournier, Grenoble (France); Institute of Nanotechnology, Karlsruhe Institute of Technology (Germany); Physikalisches Institut, Karlsruhe Institute of Technology (Germany); Liu, Dan; Chibotaru, Liviu F. [Theory of Nanomaterials Group and INPAC-Institute of Nanoscale Physics and Chemistry, Katholieke Universiteit Leuven (Belgium)

    2017-04-24

    An extremely rare non-Kramers holmium(III) single-ion magnet (SIM) is reported to be stabilized in the pentagonal-bipyramidal geometry by a phosphine oxide with a high energy barrier of 237(4) cm{sup -1}. The suppression of the quantum tunneling of magnetization (QTM) at zero field and the hyperfine structures originating from field-induced QTMs can be observed even from the field-dependent alternating-current magnetic susceptibility in addition to single-crystal hysteresis loops. These dramatic dynamics were attributed to the combination of the favorable crystal-field environment and the hyperfine interactions arising from {sup 165}Ho (I=7/2) with a natural abundance of 100 %. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  12. Single-molecule conductance of redox molecules in electrochemical scanning tunneling microscopy

    DEFF Research Database (Denmark)

    Haiss, W.; Albrecht, Tim; van Zalinge, H.

    2007-01-01

    across the molecular bridge through control of the electrochemical potential and consequently the redox state of the viologen moiety. This gating is theoretically considered within the framework of superexchange and coherent two-step notions for charge transport. It is shown here that the absence...... of a maximum in the I-tunneling versus electrode potential relationship can be fitted by a "soft" gating concept. This arises from large configurational fluctuations of the molecular bridge linked to the gold contacts by flexible chains. This view is incorporated in a formalism that is well-suited for data...

  13. Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits

    International Nuclear Information System (INIS)

    Nakamura, Tatsuya; Abe, Yuji; Kasai, Seiya; Hasegawa, Hideki; Hashizume, Tamotsu

    2006-01-01

    A new single electron (SE) binary-decision diagram (BDD) node device having a single quantum dot connected to three nanowire branches through tunnel barriers was fabricated using etched AlGaAs/GaAs nanowires and nanometer-sized Schottky wrap gates (WPGs), and their operation was characterized experimentally, for the hexagonal BDD quantum circuit. Fabricated devices showed clear and steep single electron pass switching by applying only an input voltage signal, which was completely different from switching properties in the previous SE BDD node devices composed of two single electron switches. As the possible switching mechanism, the correlation between the probabilities of tunnelling thorough a single quantum dot in exit branches was discussed

  14. Asymmetric contacts on a single SnO₂ nanowire device: an investigation using an equivalent circuit model.

    Science.gov (United States)

    Huh, Junghwan; Na, Junhong; Ha, Jeong Sook; Kim, Sangtae; Kim, Gyu Tae

    2011-08-01

    Electrical contacts between the nanomaterial and metal electrodes are of crucial importance both from fundamental and practical points of view. We have systematically compared the influence of contact properties by dc and EIS (Electrochemical impedance spectroscopy) techniques at various temperatures and environmental atmospheres (N(2) and 1% O(2)). Electrical behaviors are sensitive to the variation of Schottky barriers, while the activation energy (E(a)) depends on the donor states in the nanowire rather than on the Schottky contact. Equivalent circuits in terms of dc and EIS analyses could be modeled by Schottky diodes connected with a series resistance and parallel RC circuits, respectively. These results can facilitate the electrical analysis for evaluating the nanowire electronic devices with Schottky contacts.

  15. E1 Gap of Wurtzite InAs Single Nanowires Measured by Means of Resonant Raman Spectroscopy

    International Nuclear Information System (INIS)

    Moeller, M.; Lima, M. M. Jr. de; Cantarero, A.; Dacal, L. C. O.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.

    2011-01-01

    Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215 cm -1 reveals an E 1 gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase.

  16. E1 Gap of Wurtzite InAs Single Nanowires Measured by Means of Resonant Raman Spectroscopy

    Science.gov (United States)

    Möller, M.; Dacal, L. C. O.; de Lima, M. M.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.; Cantarero, A.

    2011-12-01

    Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215 cm-1 reveals an E1 gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase.

  17. Quantum transport in GaN/AlN double-barrier heterostructure nanowires.

    Science.gov (United States)

    Songmuang, R; Katsaros, G; Monroy, E; Spathis, P; Bougerol, C; Mongillo, M; De Franceschi, S

    2010-09-08

    We investigate electronic transport in n-i-n GaN nanowires with and without AlN double barriers. The nanowires are grown by catalyst-free, plasma-assisted molecular beam epitaxy enabling abrupt GaN/AlN interfaces as well as longitudinal n-type doping modulation. At low temperature, transport in n-i-n GaN nanowires is dominated by the Coulomb blockade effect. Carriers are confined in the undoped middle region, forming single or multiple islands with a characteristic length of approximately 100 nm. The incorporation of two AlN tunnel barriers causes confinement to occur within the GaN dot in between. In the case of a 6 nm thick dot and 2 nm thick barriers, we observe characteristic signatures of Coulomb-blockaded transport in single quantum dots with discrete energy states. For thinner dots and barriers, Coulomb-blockade effects do not play a significant role while the onset of resonant tunneling via the confined quantum levels is accompanied by a negative differential resistance surviving up to approximately 150 K.

  18. Germanium nanowires grown using different catalyst metals

    Energy Technology Data Exchange (ETDEWEB)

    Gouveia, R.C., E-mail: riama@ifsp.edu.br [Departamento de Física – NanO Lab, Universidade Federal de São Carlos, Rod. Washington Luís, Km 235 – SP 310, São Carlos, CEP 13565-905 (Brazil); Área de Ciências, Instituto Federal de Educação Ciência e Tecnologia de São Paulo, Rua Américo Ambrósio, 269, Jd. Canaã, Sertãozinho, CEP 14169-263 (Brazil); Kamimura, H.; Munhoz, R.; Rodrigues, A.D. [Departamento de Física – NanO Lab, Universidade Federal de São Carlos, Rod. Washington Luís, Km 235 – SP 310, São Carlos, CEP 13565-905 (Brazil); Leite, E.R. [Departamento de Química – LIEC, Universidade Federal de São Carlos, São Carlos, CEP 13565-905 (Brazil); Chiquito, A.J. [Departamento de Física – NanO Lab, Universidade Federal de São Carlos, Rod. Washington Luís, Km 235 – SP 310, São Carlos, CEP 13565-905 (Brazil)

    2016-11-01

    Germanium nanowires have been synthesized by the well known vapor-liquid-solid growth mechanism using gold, silver, cooper, indium and nickel as catalyst metals. The influence of metal seeds on nanowires structural and electronic transport properties was also investigated. Electron microscopy images demonstrated that, despite differences in diameters, all nanowires obtained presented single crystalline structures. X-ray patterns showed that all nanowires were composed by germanium with a small amount of germanium oxide, and the catalyst metal was restricted at the nanowires' tips. Raman spectroscopy evidenced the long range order in the crystalline structure of each sample. Electrical measurements indicated that variable range hopping was the dominant mechanism in carrier transport for all devices, with similar hopping distance, regardless the material used as catalyst. Then, in spite of the differences in synthesis temperatures and nanowires diameters, the catalyst metals have not affected the composition and crystalline quality of the germanium nanowires nor the carrier transport in the germanium nanowire network devices. - Highlights: • Ge nanowires were grown by VLS method using Au, Ag, Cu, In and Ni as catalysts. • All nanowires presented high single crystalline quality and long range order. • Devices showed semiconducting behavior having VRH as dominant transport mechanism. • The metal catalyst did not influence structural properties or the transport mechanism.

  19. Comparison of Magnetization Tunneling in the Giant-Spin and Multi-Spin Descriptions of Single-Molecule Magnets

    Science.gov (United States)

    Liu, Junjie; Del Barco, Enrique; Hill, Stephen

    2010-03-01

    We perform a mapping of the spectrum obtained for a triangular Mn3 single-molecule magnet (SMM) with idealized C3 symmetry via exact diagonalization of a multi-spin (MS) Hamiltonian onto that of a giant-spin (GS) model which assumes strong ferromagnetic coupling and a spin S = 6 ground state. Magnetic hysteresis measurements on this Mn3 SMM reveal clear evidence that the steps in magnetization due to magnetization tunneling obey the expected quantum mechanical selection rules [J. Henderson et al., Phys. Rev. Lett. 103, 017202 (2009)]. High-frequency EPR and magnetization data are first fit to the MS model. The tunnel splittings obtained via the two models are then compared in order to find a relationship between the sixth order transverse anisotropy term B6^6 in GS model and the exchange constant J coupling the Mn^III ions in the MS model. We also find that the fourth order transverse term B4^3 in the GS model is related to the orientation of JahnTeller axes of Mn^III ions, as well as J

  20. Quantum tunneling in real space: Tautomerization of single porphycene molecules on the (111) surface of Cu, Ag, and Au

    Science.gov (United States)

    Kumagai, Takashi; Ladenthin, Janina N.; Litman, Yair; Rossi, Mariana; Grill, Leonhard; Gawinkowski, Sylwester; Waluk, Jacek; Persson, Mats

    2018-03-01

    Tautomerization in single porphycene molecules is investigated on Cu(111), Ag(111), and Au(111) surfaces by a combination of low-temperature scanning tunneling microscopy (STM) experiments and density functional theory (DFT) calculations. It is revealed that the trans configuration is the thermodynamically stable form of porphycene on Cu(111) and Ag(111), whereas the cis configuration occurs as a meta-stable form. The trans → cis or cis → trans conversion on Cu(111) can be induced in an unidirectional fashion by injecting tunneling electrons from the STM tip or heating the surface, respectively. We find that the cis ↔ cis tautomerization on Cu(111) occurs spontaneously via tunneling, verified by the negligible temperature dependence of the tautomerization rate below ˜23 K. Van der Waals corrected DFT calculations are used to characterize the adsorption structures of porphycene and to map the potential energy surface of the tautomerization on Cu(111). The calculated barriers are too high to be thermally overcome at cryogenic temperatures used in the experiment and zero-point energy corrections do not change this picture, leaving tunneling as the most likely mechanism. On Ag(111), the reversible trans ↔ cis conversion occurs spontaneously at 5 K and the cis ↔ cis tautomerization rate is much higher than on Cu(111), indicating a significantly smaller tautomerization barrier on Ag(111) due to the weaker interaction between porphycene and the surface compared to Cu(111). Additionally, the STM experiments and DFT calculations reveal that tautomerization on Cu(111) and Ag(111) occurs with migration of porphycene along the surface; thus, the translational motion couples with the tautomerization coordinate. On the other hand, the trans and cis configurations are not discernible in the STM image and no tautomerization is observed for porphycene on Au(111). The weak interaction of porphycene with Au(111) is closest to the gas-phase limit and therefore the absence

  1. Magnetic and transport properties of single and double perpendicular magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Cuchet, Lea

    2015-01-01

    Due to their advantageous properties in terms of data retention, storage density and critical current density for Spin Transfer Torque (STT) switching, the magnetic tunnel junctions with perpendicular anisotropy have become predominant in the developments for MRAM applications. The aim of this thesis is to improve the anisotropy and transport properties of such structures and to realize even more complex stacks such as perpendicular double junctions. Studies on the magnetic properties and Tunnel Magnetoresistance (TMR) measurements showed that to optimize the performances of the junctions, all the thicknesses of the different layers constituting the stack have to be adapted. To guaranty both a large TMR as well a strong perpendicular anisotropy, compromises are most of the time needed. Studies as a function of magnetic thickness enabled to extract the saturation magnetization, the critical thickness and the magnetic dead layer thickness both in the bottom reference and the top storage layer in structures capped with Ta. This type of junction could be tested electrically after patterning the sample into nano-pillars. Knowing that perpendicular anisotropy mostly arises at the metal/oxide interface, the Ta capping layer was replaced by a MgO one, leading to a huge increase in the anisotropy of the free layer. A second top reference was then added on such a stack to create functional perpendicular double junctions. CoFeB/insertion/CoFeB synthetic antiferromagnetic storage layers could be developed and were proved to be stable enough to replace the standard Co/Pt-based reference layers. (author) [fr

  2. Nanowire Optoelectronics

    OpenAIRE

    Wang Zhihuan; Nabet Bahram

    2015-01-01

    Semiconductor nanowires have been used in a variety of passive and active optoelectronic devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs), lasers, sensors, and optical antennas. We review the optical properties of these nanowires in terms of absorption, guiding, and radiation of light, which may be termed light management. Analysis of the interaction of light with long cylindrical/hexagonal structures with ...

  3. Nanowire Lasers

    Directory of Open Access Journals (Sweden)

    Couteau C.

    2015-05-01

    Full Text Available We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs, solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, andwavelength tunability.Next,we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers inmany applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

  4. Nanowires, nanostructures and devices fabricated therefrom

    Science.gov (United States)

    Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

    2005-04-19

    One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

  5. Single molecule manipulation at low temperature and laser scanning tunnelling photo-induced processes analysis through time-resolved studies

    International Nuclear Information System (INIS)

    Riedel, Damien

    2010-01-01

    This paper describes, firstly, the statistical analysis used to determine the processes that occur during the manipulation of a single molecule through electronically induced excitations with a low temperature (5 K) scanning tunnelling microscope (STM). Various molecular operation examples are described and the ability to probe the ensuing molecular manipulation dynamics is discussed within the excitation context. It is, in particular, shown that such studies can reveal reversible manipulation for tuning dynamics through variation of the excitation energy. Secondly, the photo-induced process arising from the irradiation of the STM junction is also studied through feedback loop dynamics analysis, allowing us to distinguish between photo-thermally and photo-electronically induced signals.

  6. Single molecule manipulation at low temperature and laser scanning tunnelling photo-induced processes analysis through time-resolved studies.

    Science.gov (United States)

    Riedel, Damien

    2010-07-07

    This paper describes, firstly, the statistical analysis used to determine the processes that occur during the manipulation of a single molecule through electronically induced excitations with a low temperature (5 K) scanning tunnelling microscope (STM). Various molecular operation examples are described and the ability to probe the ensuing molecular manipulation dynamics is discussed within the excitation context. It is, in particular, shown that such studies can reveal reversible manipulation for tuning dynamics through variation of the excitation energy. Secondly, the photo-induced process arising from the irradiation of the STM junction is also studied through feedback loop dynamics analysis, allowing us to distinguish between photo-thermally and photo-electronically induced signals. © 2010 IOP Publishing Ltd

  7. Visualizing hybridized quantum plasmons in coupled nanowires

    DEFF Research Database (Denmark)

    Andersen, Kirsten; Jensen, Kristian Lund; Mortensen, N. Asger

    2013-01-01

    We present full quantum-mechanical calculations of the hybridized plasmon modes of two nanowires at small separation, providing real-space visualization of the modes in the transition from the classical to the quantum tunneling regime. The plasmon modes are obtained as certain eigenfunctions of t...

  8. Optical polarization properties of a nanowire quantum dot probed along perpendicular orientations

    NARCIS (Netherlands)

    Bugarini, G.; Reimer, M.E.; Zwiller, V.

    2012-01-01

    We report on the optical properties of single quantum dots in nanowires probed along orthogonal directions. We address the same quantum dot from either the nanowire side or along the nanowire axis via reflection on a micro-prism. The collected photoluminescence intensity from nanowires lying on a

  9. Conversion from temporary to tunneled catheters by nephrologists: report of a single-center experience

    Directory of Open Access Journals (Sweden)

    Silva BC

    2016-04-01

    Full Text Available Bruno C Silva, Camila E Rodrigues, Regina CRM Abdulkader, Rosilene M Elias Nephrology Division, Hospital das Clínicas, University of São Paulo, São Paulo, Brazil Background: Nephrologists have increasingly participated in the conversion from temporary catheters (TC to tunneled-cuffed catheters (TCCs for hemodialysis. Objective: To prospectively analyze the outcomes associated with TCC placement by nephrologists with expertise in such procedure, in different time periods at the same center. The impact of vancomycin or cefazolin as prophylactic antibiotics on the infection outcomes was also tested. Patients and methods: Hemodialysis patients who presented to such procedure were divided into two cohorts: A (from 2004 to 2008 and B (from 2013 to 2015. Time from TC to TCC conversion, prophylactic antibiotics, and reasons for TCC removal were evaluated. Results: One hundred and thirty patients were included in cohort A and 228 in cohort B. Sex, age, and follow-up time were similar between cohorts. Median time from TC to TCC conversion was longer in cohort A than in cohort B (14 [3; 30] vs 4 [1; 8] days, respectively; P<0.0001. Infection leading to catheter removal occurred in 26.4% vs 18.9% of procedures in cohorts A and B, respectively, and infection rate was 0.93 vs 0.73 infections per 1,000 catheter-days, respectively (P=0.092. Infection within 30 days from the procedure occurred in 1.4% of overall cohort. No differences were observed when comparing vancomycin and cefazolin as prophylactic antibiotics on 90-day infection-free TCC survival in a Kaplan–Meier model (log-rank = 0.188. TCC removal for low blood flow occurred in 8.9% of procedures. Conclusion: Conversion of TC to TCC by nephrologists had overall infection, catheter patency, and complications similar to data reported in the literature. Vancomycin was not superior to cefazolin as a prophylactic antibiotic. Keywords: renal dialysis, tunneled catheters, interventional nephrology

  10. A single-electron tunneling reset-set flip-flop

    Energy Technology Data Exchange (ETDEWEB)

    Alencar, Bianca M. S. M. de; Guimarães, Janaina G. [Department of Electrical Engineering, University of Brasilia, Campus Universitário Darcy Ribeiro, Asa Norte, P.O. Box 4386, Brasilia-DF, 70919-970 (Brazil)

    2014-05-15

    In this paper, a new Reset-Set flip-flop fully implemented with single-electron devices is proposed. Its topology derived from NAND gates and was validated at room temperature by simulation. Furthermore, a comparison between the proposed single-electron device and MOS devices in terms of power consumption and occupied area is presented.

  11. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Science.gov (United States)

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  12. Semiconductor nanowires: optics and optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Agarwal, R. [University of Pennsylvania, Department of Materials Science and Engineering, Philadelphia, PA (United States); Lieber, C.M. [Harvard University, Department of Chemistry and Chemical Biology, and Division of Engineering Applied Sciences, Cambridge, MA (United States)

    2006-11-15

    Single crystalline semiconductor nanowires are being extensively investigated due to their unique electronic and optical properties and their potential use in novel electronic and photonic devices. The unique properties of nanowires arise owing to their anisotropic geometry, large surface to volume ratio, and carrier and photon confinement in two dimensions (1D system). Currently, tremendous efforts are being devoted to rational synthesis of nanowire structures with control over their composition, structure, dopant concentration, characterization, fundamental properties, and assembly into functional devices. In this article we will review the progress made in the area of nanowire optics and optoelectronic devices, including diodes, lasers, detectors, and waveguides, and will outline the general challenges that must be overcome and some potential solutions in order to continue the exponential progress in this exciting area of research. (orig.)

  13. Imaging Few-Electron Double Quantum Dots in InAs/InP Nanowires

    Science.gov (United States)

    Trodahl, Halvar J.; Boyd, Erin E.; Bleszynski, Ania; Westervelt, R. M.; Froberg, Linus E.; Samuelson, Lars

    2007-03-01

    InAs quantum dots formed in InAs/InP nanowire heterostructures are attractive candidates for nanoelectronics, spintronics and quantum information processing. Tunnel-coupled double InAs dots defined by InP barriers can be grown using chemical beam epitaxy; each dot can be small enough to hold just a few electrons. It is difficult to lithographically define gates small enough to individually address each dot. With use of a liquid-He cooled scanning probe microscope (SPM), the Coulomb blockade conductance of a single InAs quantum dot in an InAs/InP nanowire has been imaged, using the SPM tip as a movable gate [1]. This approach can individually tune the charge on each InAs dot in an InAs/InP nanowire. We plan to use this technique to investigate tunnel-coupled InAs double dots. [1] A. Bleszynski et al., 28th Int. Conf. on the Physics of Semiconductors, 2006.

  14. Electronic transport in semiconductor nanowires: physics studies and possible device applications

    Science.gov (United States)

    Samuelson, Lars

    2007-03-01

    Semiconductor nanowires are attractive for physics as well as for applications due to the highly ideal character of their electronic and structural properties. We grow our III-V nanowires by what can be described as guided self-assembly, by which we can accurately control location as well as dimensions of epitaxially nucleated nanowires. The level of control of growth allows controlled formation of axial as well as radial heterostructures. I will describe studies of charge transport via single, double and multiple quantum dots positioned inside InAs/InP nanowires. Such studies have allowed detailed studies of the addition of electrons one-by-one, from the very first electron into an empty quantum dot to the addition of up to 50 electrons. By replacing the one-dimensional emitter by a small quantum dot in a double-dot configuration, the discrete character of the injecting state allows ever more detailed spectroscopic studies of the charge additions to the second dot. Comparisons will be made with transport through quantum dots defined by tunnel barriers induced via gating techniques. Finally, a recently developed technique for the formation vertical wrap-gate field-effect transistors around InAs nanowires will be described, suggesting interesting opportunities for the realization of high-speed and low-power transistors and circuits. The geometrical design of such nanowire wrap-gate field-effect transistors, offers exciting ways of formation of ultra-short transistor gate-lengths as well as the use of heterostructures to further enhance the performance of such devices.

  15. Signal from a single neutron by using current-biased kinetic inductance detector made of superconducting Nb nanowire

    International Nuclear Information System (INIS)

    Narukami, Yoshito; Miyajima, Shigeyuki; Shishido, Hiroaki; Ishida, Takekazu; Fujimaki, Akira; Hidaka, Mutsuo; Oikawa, Kenichi; Harada, Masahide; Oku, Takayuki; Arai, Masatoshi

    2015-01-01

    We propose a current-biased kinetic inductance detector (CB-KID), as a different type of superconducting neutron detector, which senses a change in kinetic inductance in the superconducting Nb nanowire biased by dc current I b . Kinetic inductance depends on the density of Cooper pairs. Therefore, when Cooper pairs are broken by energy of nuclear reaction between neutron and 10 B near the Nb nanowire, a change in kinetic inductance ΔL k can be detected by monitoring a voltage V across the sensor. We irradiated 20 ps pulsed laser to our CB-KID and confirmed 4-K operation and the possibility of attaining 0.6-μm positional resolution. Furthermore, we succeeded in detecting a neutron by using CB-KID for the first time. It is important to note that the signal from neutron irradiation was similar to that from pulsed laser irradiation. It indicates that pulsed laser irradiation is a good simulation instead of neutron irradiation. (author)

  16. Pulsed laser deposition of aluminum nitride nanowires

    Science.gov (United States)

    Yunusova, N. R.; Kargin, N. I.; Ryndya, S. M.; Gusev, A. S.; Antonenko, S. V.; Timofeev, A. A.

    2018-01-01

    The possibility of AlN nanowires deposition on single-crystal silicon substrates by pulsed laser deposition in vacuum is shown in this work. Experimental samples were investigated by scanning electron microscopy and infrared Fourier spectroscopy. It is shown that the possible mechanism for the AlN nanowires formation is the "vapor-liquid-crystal" mechanism.

  17. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  18. Long-range protein electron transfer observed at the single-molecule level: In situ mapping of redox-gated tunneling resonance

    DEFF Research Database (Denmark)

    Chi, Qijin; Farver, O; Ulstrup, Jens

    2005-01-01

    A biomimetic long-range electron transfer (ET) system consisting of the blue copper protein azurin, a tunneling barrier bridge, and a gold single-crystal electrode was designed on the basis of molecular wiring self-assembly principles. This system is sufficiently stable and sensitive in a quasi...... on the redox potential. Maximum resonance appears around the equilibrium redox potential of azurin with an on/off current ratio of approximate to 9. Simulation analyses, based on a two-step interfacial ET model for the scanning tunneling microscopy redox process, were performed and provide quantitative...

  19. Static and dynamic magnetic properties of densely packed magnetic nanowire arrays

    DEFF Research Database (Denmark)

    Dmytriiev, O.; Al-Jarah, U.A.S.; Gangmei, P.

    2013-01-01

    between experimental and simulated spectra are observed when the field is applied perpendicular to the nanowire axes. The dependence of the magnetic excitation spectra upon the array packing density is explored, and dispersion curves for spin waves propagating within the array parallel to the nanowire...... axis are presented. Finally, a tunneling of end modes through the middle region of the nanowires was observed. The tunneling is more efficient for wires forming densely packed arrays, as a result of the extended penetration of the dynamic demagnetizing fields into the middle of the wires and due...... to the lowering of the tunneling barrier by the static demagnetizing field of the array....

  20. In vivo three-dimensional imaging analysis of femoral and tibial tunnel locations in single and double bundle anterior cruciate ligament reconstructions.

    Science.gov (United States)

    Yang, Jae-Hyuk; Chang, Minho; Kwak, Dai-Soon; Jang, Ki-Mo; Wang, Joon Ho

    2014-03-01

    Anatomic footprint restoration of anterior cruciate ligament (ACL) is recommended during reconstruction surgery. The purpose of this study was to compare and analyze the femoral and tibial tunnel positions of transtibial single bundle (SB) and transportal double bundle (DB) ACL reconstruction using three-dimensional computed tomography (3D-CT). In this study, 26 patients who underwent transtibial SB ACL reconstruction and 27 patients with transportal DB ACL reconstruction using hamstring autograft. 3D-CTs were taken within 1 week after the operation. The obtained digital images were then imported into the commercial package Geomagic Studio v10.0. The femoral tunnel positions were evaluated using the quadrant method. The mean, standard deviation, standard error, minimum, maximum, and 95% confidence interval values were determined for each measurement. The femoral tunnel for the SB technique was located 35.07% ± 5.33% in depth and 16.62% ± 4.99% in height. The anteromedial (AM) and posterolateral (PL) tunnel of DB technique was located 30.48% ± 5.02% in depth, 17.12% ± 5.84% in height and 34.76% ± 5.87% in depth, 45.55% ± 6.88% in height, respectively. The tibial tunnel with the SB technique was located 45.43% ± 4.81% from the anterior margin and 47.62% ± 2.51% from the medial tibial articular margin. The AM and PL tunnel of the DB technique was located 33.76% ± 7.83% from the anterior margin, 45.56% ± 2.71% from the medial tibial articular margin and 53.19% ± 3.74% from the anterior margin, 46.00% ± 2.48% from the medial tibial articular margin, respectively. The tibial tunnel position with the transtibial SB technique was located between the AM and PL tunnel positions formed with the transportal DB technique. Using the 3D-CT measuring method, the location of the tibia tunnel was between the AM and PL footprints, but the center of the femoral tunnel was at more shallow position from the AM bundle footprint when ACL reconstruction was performed by the

  1. Anatomic single-bundle ACL surgery: consequences of tibial tunnel diameter and drill-guide angle on tibial footprint coverage.

    Science.gov (United States)

    Van der Bracht, H; Verhelst, L; Stuyts, B; Page, B; Bellemans, J; Verdonk, P

    2014-05-01

    To investigate the consequences of differences in drill-guide angle and tibial tunnel diameter on the amount of tibial anatomical anterior cruciate ligament (ACL) footprint coverage and the risk of overhang of the tibial tunnel aperture over the edges of the native tibial ACL footprint. Twenty fresh-frozen adult human knee specimens with a median age of 46 years were used for this study. Digital templates mimicking the ellipsoid aperture of tibial tunnels with a different drill-guide angle and a different diameter were designed. The centres of these templates were positioned over the geometric centre of the tibial ACL footprint. The amount of tibial ACL footprint coverage and overhang was calculated. Risk factors for overhang were determined. Footprint coverage and the risk of overhang were also compared between a lateral tibial tunnel and a classic antero-medial tibial tunnel. A larger tibial tunnel diameter and a smaller drill-guide angle both will create significant more footprint coverage and overhang. In 45% of the knees, an overhang was created with a 10-mm diameter tibial tunnel with drill-guide angle 45°. Furthermore, a lateral tibial tunnel was found not to be at increased risk of overhang. A larger tibial tunnel diameter and a smaller drill-guide angle both will increase the amount of footprint coverage. Inversely, larger tibial tunnel diameters and smaller drill-guide angles will increase the risk of overhang of the tibial tunnel aperture over the edges of the native tibial ACL footprint. A lateral tibial tunnel does not increase the risk of overhang.

  2. Influence of Different Tibial Fixation Techniques on Initial Stability in Single-Stage Anterior Cruciate Ligament Revision With Confluent Tibial Tunnels: A Biomechanical Laboratory Study.

    Science.gov (United States)

    Schliemann, Benedikt; Treder, Maximilian; Schulze, Martin; Müller, Viktoria; Vasta, Sebastiano; Zampogna, Biaggio; Herbort, Mirco; Kösters, Clemens; Raschke, Michael J; Lenschow, Simon

    2016-01-01

    To kinematically and biomechanically compare 4 different types of tibial tunnel management in single-stage anterior cruciate ligament (ACL) revision reconstruction with the control: primary ACL reconstruction using a robotic-based knee testing setup. Porcine knees and flexor tendons were used. One hundred specimens were randomly assigned to 5 testing groups: (1) open tibial tunnel, (2) bone plug technique, (3) biodegradable interference screw, (4) dilatation technique, and (5) primary ACL reconstruction. A robotic/universal force-moment sensor testing system was used to simulate the KT-1000 (MEDmetric, San Diego, CA) and pivot-shift tests. Cyclic loading and load-to-failure testing were performed. Anterior tibial translation increased significantly with all of the techniques compared with the intact ACL (P .05). The open tunnel and dilated tunnel techniques showed significantly greater anterior tibial translation (P < .05). The results of the simulated pivot-shift test were in accordance with those of the KT-1000 test. No significant differences could be observed regarding stiffness or maximum load to failure. However, elongation was significantly lower in the primary ACL reconstruction group compared with groups 1 and 3 (P = .02 and P = .03, respectively). Filling an incomplete and incorrect tibial tunnel with a press-fit bone plug or a biodegradable interference screw in a standardized laboratory situation provided initial biomechanical properties and knee stability comparable with those of primary ACL reconstruction. In contrast, the dilatation technique or leaving the malplaced tunnel open did not restore knee kinematics adequately in this model. Backup extracortical fixation should be considered because the load to failure depends on the extracortical fixation when an undersized interference screw is used for aperture fixation. Our biomechanical results could help orthopaedic surgeons to optimize the results of primary ACL revision with incomplete, incorrect

  3. Evaluation of femoral tunnel positioning using 3-dimensional computed tomography and radiographs after single bundle anterior cruciate ligament reconstruction with modified transtibial technique.

    Science.gov (United States)

    Lee, Sung Rak; Jang, Hyoung Won; Lee, Dhong Won; Nam, Sang Wook; Ha, Jeong Ku; Kim, Jin Goo

    2013-09-01

    The purpose of this study is to report a modified transtibial technique to approach the center of anatomical femoral footprint in anterior cruciate ligament (ACL) reconstruction and to investigate the accurate femoral tunnel position with 3-dimensional computed tomography (3D-CT) and radiography after reconstruction. From December 2010 to October 2011, we evaluated 98 patients who underwent primary ACL reconstruction using a modified transtibial technique to approach the center of anatomical femoral footprint in single bundle ACL reconstruction with hamstring autograft. Their femoral tunnel positions were investigated with 3D-CT and radiography postoperatively. Femoral tunnel angle was measured on the postoperative anteroposterior (AP) radiograph and the center of the femoral tunnel aperture on the lateral femoral condyle was assessed with 3D-CT according to the quadrant method by two orthopedic surgeons. According to the quadrant method with 3D-CT, the femoral tunnel was measured at a mean of 32.94% ± 5.16% from the proximal condylar surface (parallel to the Blumensaat line) and 41.89% ± 5.58% from the notch roof (perpendicular to the Blumensaat line) with good interobserver (intraclass correlation coefficients [ICC], 0.766 and 0.793, respectively) and intraobserver reliability (ICC, 0.875 and 0.893, respectively). According to the radiographic measurement on the AP view, the femoral tunnel angles averaged 50.43° ± 7.04° (ICC, 0.783 and 0.911, respectively). Our modified transtibial technique is anticipated to provide more anatomical placement of the femoral tunnel during ACL reconstruction than the former traditional transtibial techniques.

  4. Single nanowire OPV properties of a fullerene-capped P3HT dyad investigated using conductive and photoconductive AFM.

    Science.gov (United States)

    Kamkar, Daniel A; Wang, Mingfeng; Wudl, Fred; Nguyen, Thuc-Quyen

    2012-02-28

    The effect of molecular self-assembly on nanoscale photoinduced charge generation of fullerene-capped poly(3-hexylthiophene) (PCB-c-P3HT) films and its effectiveness as a molecular additive in bulk heterojunction P3HT:[6,6]-phenyl-C(61)-butyric acid methyl ester (PCBM) is investigated through photoconductive atomic force microscopy. ortho-Dichlorobenzene-cast films of PCB-c-P3HT are found to form interconnected fibrous networks that show high photocurrent generation, while tetrahydrofuran-cast films show nanospheres with relatively low photocurrent generation. The nanofiber size and current generated from these nanowires are shown to vary with additions of PCBM. The PCB-c-P3HT amphiphile is shown to be a successful molecular additive in P3HT:PCBM films. These observations demonstrate how the self-assembly of PCB-c-P3HT into specific nanostructures is crucial to charge generation and transport.

  5. Landau-Zener tunneling of a single Tb3+ magnetic moment allowing the electronic read-out of a nuclear spin

    Science.gov (United States)

    Urdampilleta, M.; Klyatskaya, S.; Ruben, M.; Wernsdorfer, W.

    2013-05-01

    A multiterminal device based on a carbon nanotube quantum dot was used at very low temperature to probe a single electronic and nuclear spin embedded in a bis-(phthalocyaninato) terbium (III) complex (TbPc2). A spin-valve signature with large conductance jumps was found when two molecules were strongly coupled to the nanotube. The application of a transverse field separated the magnetic signal of both molecules and enabled single-shot read-out of the terbium nuclear spin. The Landau-Zener (LZ) quantum tunneling probability was studied as a function of field sweep rate, establishing a good agreement with the LZ equation and yielding the tunnel splitting Δ. It was found that Δ increased linearly as a function of the transverse field. These studies are an essential prerequisite for the coherent manipulation of a single nuclear spin in TbPc2.

  6. Single-tunnel double-bundle anterior cruciate ligament reconstruction with anatomical placement of hamstring tendon graft: can it restore normal knee joint kinematics?

    Science.gov (United States)

    Gadikota, Hemanth R; Wu, Jia-Lin; Seon, Jong Keun; Sutton, Karen; Gill, Thomas J; Li, Guoan

    2010-04-01

    Anatomical reconstruction techniques that can restore normal joint kinematics without increasing surgical complications could potentially improve clinical outcomes and help manage anterior cruciate ligament injuries more efficiently. Single-tunnel double-bundle anterior cruciate ligament reconstruction with anatomical placement of hamstring tendon graft can more closely restore normal knee anterior-posterior, medial-lateral, and internal-external kinematics than can conventional single-bundle anterior cruciate ligament reconstruction. Controlled laboratory study. Kinematic responses after single-bundle anterior cruciate ligament reconstruction and single-tunnel double-bundle anterior cruciate ligament reconstruction with anatomical placement of hamstring tendon graft were compared with the intact knee in 9 fresh-frozen human cadaveric knee specimens using a robotic testing system. Kinematics of each knee were determined under an anterior tibial load (134 N), a simulated quadriceps load (400 N), and combined torques (10 N.m valgus and 5 N.m internal tibial torques) at 0 degrees , 15 degrees , 30 degrees , 60 degrees , and 90 degrees of flexion. Anterior tibial translations were more closely restored to the intact knee level after single-tunnel double-bundle reconstruction with anatomical placement of hamstring tendon graft than with a single-bundle reconstruction under the 3 external loading conditions. Under simulated quadriceps load, the mean internal tibial rotations after both reconstructions were lower than that of the anterior cruciate ligament-intact knee with no significant differences between these 3 knee conditions at 0 degrees and 30 degrees of flexion (P > .05). The increased medial tibial shifts of the anterior cruciate ligament-deficient knees were restored to the intact level by both reconstruction techniques under the 3 external loading conditions. Single-tunnel double-bundle anterior cruciate ligament reconstruction with anatomical placement of

  7. A sub k{sub B}T/q semimetal nanowire field effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Ansari, L.; Fagas, G.; Gity, F.; Greer, J. C., E-mail: Jim.Greer@Tyndall.ie [Tyndall National Institute, Lee Maltings, Dyke Parade, Cork T12 R5CP (Ireland)

    2016-08-08

    The key challenge for nanoelectronics technologies is to identify the designs that work on molecular length scales, provide reduced power consumption relative to classical field effect transistors (FETs), and that can be readily integrated at low cost. To this end, a FET is introduced that relies on the quantum effects arising for semimetals patterned with critical dimensions below 5 nm, that intrinsically has lower power requirements due to its better than a “Boltzmann tyranny” limited subthreshold swing (SS) relative to classical field effect devices, eliminates the need to form heterojunctions, and mitigates against the requirement for abrupt doping profiles in the formation of nanowire tunnel FETs. This is achieved through using a nanowire comprised of a single semimetal material while providing the equivalent of a heterojunction structure based on shape engineering to avail of the quantum confinement induced semimetal-to-semiconductor transition. Ab initio calculations combined with a non-equilibrium Green's function formalism for charge transport reveals tunneling behavior in the OFF state and a resonant conduction mechanism for the ON state. A common limitation to tunnel FET (TFET) designs is related to a low current in the ON state. A discussion relating to the semimetal FET design to overcome this limitation while providing less than 60 meV/dec SS at room temperature is provided.

  8. A sub kBT/q semimetal nanowire field effect transistor

    Science.gov (United States)

    Ansari, L.; Fagas, G.; Gity, F.; Greer, J. C.

    2016-08-01

    The key challenge for nanoelectronics technologies is to identify the designs that work on molecular length scales, provide reduced power consumption relative to classical field effect transistors (FETs), and that can be readily integrated at low cost. To this end, a FET is introduced that relies on the quantum effects arising for semimetals patterned with critical dimensions below 5 nm, that intrinsically has lower power requirements due to its better than a "Boltzmann tyranny" limited subthreshold swing (SS) relative to classical field effect devices, eliminates the need to form heterojunctions, and mitigates against the requirement for abrupt doping profiles in the formation of nanowire tunnel FETs. This is achieved through using a nanowire comprised of a single semimetal material while providing the equivalent of a heterojunction structure based on shape engineering to avail of the quantum confinement induced semimetal-to-semiconductor transition. Ab initio calculations combined with a non-equilibrium Green's function formalism for charge transport reveals tunneling behavior in the OFF state and a resonant conduction mechanism for the ON state. A common limitation to tunnel FET (TFET) designs is related to a low current in the ON state. A discussion relating to the semimetal FET design to overcome this limitation while providing less than 60 meV/dec SS at room temperature is provided.

  9. Submolecular Electronic Mapping of Single Cysteine Molecules by in Situ Scanning Tunneling Imaging

    DEFF Research Database (Denmark)

    Zhang, Jingdong; Chi, Qijin; Nazmutdinov, R. R.

    2009-01-01

    based on a slab model for the metal surface. The ordered monolayer offers a platform for submolecular scale electronic mapping that is an issue of fundamental interest but remains a challenge in STM imaging science and surface chemistry. Single Cys molecules were mapped as three electronic subunits...... bulk. The correlation between physical location and electronic contrast of the adsorbed molecules was also revealed by the computational data. The present study shows that cysteine packing in the adlayer on Au(110) from the liquid environment is in contrast to that from the ultrahigh-vacuum environment...

  10. DFT calculations of the charged states of N@C60 and Fe4 single molecule magnets investigated in tunneling spectroscopy

    Science.gov (United States)

    Nossa, Javier; Islam, Fhokrul; Canali, Carlo; Pederson, Mark

    2012-02-01

    For device applications of single molecule magnets (SMMs) in high-density information storage and quantum-state control it is essential that the magnetic properties of the molecules remain stable under the influence of metallic contacts or surface environment. Recent tunneling experiments [1, 2] on N@C60 and Fe4 SMM have shown that these molecules preserve their magnetic characteristics when they are used as the central island of single-electron transistors. Although quantum spin models have been used extensively to study theoretically tunneling spectroscopy of SMMs, it has been shown recently that the orbital degrees of freedom, which is absent in spin models, can significantly affect the tunneling conductance [3]. In this work we present first-principles calculations of the neutral and charged states of N@C60 and Fe4 SMMs, and discuss a strategy to include their properties into a theory of quantum transport. We also present results of the magnetic anisotropy for the different charge states of Fe4 and discuss their relevance for experiments [2] in the sequential tunneling and cotunnelling regimes. [4pt] [1]. N. Roch et al., Phys. Rev. B 83, 081407 (2011). [0pt] [2]. A.S. Zyazin et al., Nano Lett. 10, 3307 (2010). [0pt] [3]. L. Michalak et al., Phys. Rev. Lett. 104, 017202 (2010).

  11. Optical properties of indium phosphide nanowire ensembles at various temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Lohn, Andrew J; Onishi, Takehiro; Kobayashi, Nobuhiko P [Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California Santa Cruz-NASA Ames Research Center, Moffett Field, CA 94035 (United States)

    2010-09-03

    Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified. In contrast, the photoluminescence emissions associated with wurtzite nanowires were rather insensitive to temperature. Raman spectra were collected simultaneously from zincblende and wurtzite nanowires coexisting in an ensemble. Raman peaks of the wurtzite nanowires are interpreted as those related to the zincblende nanowires by a folding of the phonon dispersion.

  12. The effect of intraoperative fluoroscopy on the accuracy of femoral tunnel placement in single-bundle anatomic ACL reconstruction.

    Science.gov (United States)

    Inderhaug, Eivind; Larsen, Allan; Waaler, Per Arne; Strand, Torbjørn; Harlem, Thomas; Solheim, Eirik

    2017-04-01

    The purpose of the current study was to investigate the potential effect of intraoperative fluoroscopy on the accuracy of femoral tunnel placement in anatomic ACL reconstruction, using an ideal anatomic point as reference and evaluating postoperative tunnel placement based on 3D CT. An experienced ACL surgeon, using the anatomic approach for femoral tunnel placement, relying on intraarticular landmarks and remnants of the torn ACL-and novel to the fluoroscopic assist-was introduced to its use. A prospective series of patients was included where group 1 (without fluoroscopy) and group 2 (with fluoroscopy) both had postoperative CT scans so that femoral tunnel position could be evaluated and compared to an ideal tunnel centre based on anatomic studies by using the Bernard and Hertel grid. Group 2, where fluoroscopy was used, had a mean femoral tunnel that was closer to the ideal anatomic centre than group 1. In the Bernard and Hertel grid, the distance in the high-low axis (y-axis) was found significantly closer (P = 0.001), whilst the deep-shallow axis (x-axis) and a total absolute distance were not significantly closer to the ideal described anatomic centre. Intraoperative fluoroscopy was found effective as an aid for placing the femoral tunnel in a more accurate position, as compared to a desired anatomic centre. Although the concept of the "one-size-fits-all" approach for tunnel placement is debatable, the avoidance of grossly misplaced tunnels is the benefit of using fluoroscopy during ACL reconstruction. The authors hold that fluoroscopy is readily available, safe and easy to use and therefore a good aid in the anatomic approach for graft tunnel placement, for example, in a learning situation, in revision cases and when performing low volumes of such surgery. III.

  13. Atomic mechanism for the growth of wafer-scale single-crystal graphene: theoretical perspective and scanning tunneling microscopy investigations

    Science.gov (United States)

    Niu, Tianchao; Zhang, Jialin; Chen, Wei

    2017-12-01

    Chemical vapor deposition (CVD) is the most promising approach for producing low-cost, high-quality, and large area graphene. Revealing the graphene growth mechanism at the atomic-scale is of great importance for realizing single crystal graphene (SCG) over wafer scale. Density functional theoretical (DFT) calculations are playing an increasingly important role in revealing the structure of the most stable carbon species, understanding the evolution processes, and disclosing the active sites. Scanning tunneling microscopy (STM) is a powerful surface characterization tool to illustrate the real space distribution and atomic structures of growth intermediates during the CVD process. Combining them together can provide valuable information to improve the atomically controlled growth of SCG. Starting from a basic concept of the substrate effect on realizing SCG, this review covers the progress made in theoretical investigations on various carbon species during graphene growth on different transition metal substrates, in the STM study of the structural intermediates on transition metal surfaces, and in synthesizing graphene nanoribbons with atomic-precise width and edge structure, ending with a perspective on the future development of 2D materials beyond graphene.

  14. Single electron transistors with hydrogen treatment of ALD SiO2 in nanoscale metal-insulator-metal tunnel junctions

    Science.gov (United States)

    Karbasian, Golnaz; McConnell, Michael S.; Orlov, Alexei O.; Nazarov, Alexei N.; Snider, Gregory L.

    2017-05-01

    Over the past five years, fabrication of metal-insulator-metal (MIM) single electron transistors (SET) featuring atomic layer deposition (ALD) of ultrathin tunnel barrier dielectrics (SiO2, Al2O3) has been reported. However, the performance of fabricated devices was significantly compromised by the presence of native metal oxide and problems associated with the nucleation of ALD dielectrics on metal substrates. To overcome the difficulty of dielectric ALD nucleation on metal substrates, we recently developed a fabrication technique in which the native metal oxide naturally forming in the presence of the ALD oxidant precursor is first used to promote the nucleation of ALD dielectrics, and then is chemically reduced by forming gas anneal (FGA) at temperatures near 400 °C. However, despite the elimination of native oxide, low temperature characterization of the devices fabricated using FGA reveals excess ‘switching’ noise of a very large magnitude resulting from charged defects within the junctions. It has been previously reported that remote hydrogen plasma (RHP) treatment of SiO2 thin films effectively eradicates fabrication defects. This work reports a comparative study of Ni-based MIM SET treated with FGA and/or RHP. We show that, using a combination of FGA and RHP treatments, it is possible to obtain MIM junctions free of switching noise and without a detectable contribution of native oxide.

  15. Optical absorption of silicon nanowires

    International Nuclear Information System (INIS)

    Xu, T.; Lambert, Y.; Krzeminski, C.; Grandidier, B.; Stiévenard, D.; Lévêque, G.; Akjouj, A.; Pennec, Y.; Djafari-Rouhani, B.

    2012-01-01

    We report on simulations and measurements of the optical absorption of silicon nanowires (NWs) versus their diameter. We first address the simulation of the optical absorption based on two different theoretical methods: the first one, based on the Green function formalism, is useful to calculate the scattering and absorption properties of a single or a finite set of NWs. The second one, based on the finite difference time domain (FDTD) method, is well-adapted to deal with a periodic set of NWs. In both cases, an increase of the onset energy for the absorption is found with increasing diameter. Such effect is experimentally illustrated, when photoconductivity measurements are performed on single tapered Si nanowires connected between a set of several electrodes. An increase of the nanowire diameter reveals a spectral shift of the photocurrent intensity peak towards lower photon energies that allow to tune the absorption onset from the ultraviolet radiations to the visible light spectrum.

  16. Quantum tunneling of magnetization in a new [Mn18]2+ single-molecule magnet with s = 13.

    Science.gov (United States)

    Brechin, Euan K; Boskovic, Colette; Wernsdorfer, Wolfgang; Yoo, Jae; Yamaguchi, Akira; Sañudo, E Carolina; Concolino, Thomas R; Rheingold, Arnold L; Ishimoto, Hidehiko; Hendrickson, David N; Christou, George

    2002-08-21

    The reaction between 2-(hydroxyethyl)pyridine (hepH) and a 2:1 molar mixture of [Mn3O(O2CMe)6(py)3](ClO4) and [Mn3O(O2CMe)6(py)3](py) in MeCN leads to isolation of [Mn18O14(O2CMe)18(hep)4(hepH)2(H2O)2](ClO4)2 (1) in 10% yield. The complex is 2MnII,16MnIII and consists of a Mn4O6 central unit to either side of which is attached a Mn7O9 unit. Magnetization data collected in the 2.0-4.0 K and 20-50 kG ranges were fit to yield S = 13, g = 1.86, and D = -0.13 cm-1 = -0.19 K, where D is the axial zero-field splitting parameter. AC susceptibility studies in the 0.04-4.0 K range at frequencies up to 996 Hz display out-of-phase (chiM' ') signals, indicative of a single-molecule magnet (SMM). Magnetization vs applied DC field scans exhibit hysteresis at SMM. DC magnetization decay data were collected on both a microcrystalline sample and a single crystal, and the combined data were used to construct an Arrhenius plot. Between 3.50 and 0.50 K, the relaxation rate is temperature-dependent with an effective barrier to relaxation (Ueff) of 14.8 cm-1 = 21.3 K. Below ca. 0.25 K, the relaxation rate is temperature-independent at 1.3 x 10-8 s-1, indicative of quantum tunneling of magnetization (QTM) between the lowest energy Ms = +/-13 levels of the S = 13 state. Complex 1 is both the largest spin and highest nuclearity SMM to exhibit QTM.

  17. Angle dependence on the anisotropic magnetoresistance amplitude of a single-contacted Ni nanowire subjected to a thermo-mechanical strain

    Energy Technology Data Exchange (ETDEWEB)

    Melilli, G.; Madon, B.; Wegrowe, J.-E., E-mail: jean-eric.wegrowe@polytechnique.edu; Clochard, M.-C., E-mail: clochard@cea.fr

    2015-12-15

    The effects of thermoelastic and piezoelectric strain of an active track-etched β-PVDF polymer matrix on an electrodeposited single-contacted Ni nanowire (NW) are investigated at the nanoscale by measuring the change of magnetization (i.e. using the inverse magnetostriction effect). The magnetization state is measured locally by anisotropic magnetoresistance (AMR). The ferromagnetic NW plays thus the role of a mechanical probe that allows the effects of mechanical strain to be characterized and described qualitatively and quantitatively. The inverse magnetostriction was found to be responsible for a quasi-disappearance of the AMR signal for a variation of the order of ΔT ≈ 10 K. In other terms, the variation of the magnetization due to the stress compensates the effect of external magnetic field applied on the NW resistance. The induced stress field in a single Ni NW was found 1000 time higher than the bulk stress field (due to thermal expansion measured on the PVDF). This amplification could be attributed to three nanoscopic effects: (1) a stress mismatch between the Ni NW and the membrane, (2) a non-negligible role of the surface tension on Ni NW Young modulus, and (3) the possibility of non-linear stress–strain law. We investigate here the role of these different contributions using track-etched polymer membranes irradiated at various angles (α{sub irrad}) leading to, after electrodeposition, embedded Ni NWs of different orientations.

  18. Angle dependence on the anisotropic magnetoresistance amplitude of a single-contacted Ni nanowire subjected to a thermo-mechanical strain

    Science.gov (United States)

    Melilli, G.; Madon, B.; Wegrowe, J.-E.; Clochard, M.-C.

    2015-12-01

    The effects of thermoelastic and piezoelectric strain of an active track-etched β-PVDF polymer matrix on an electrodeposited single-contacted Ni nanowire (NW) are investigated at the nanoscale by measuring the change of magnetization (i.e. using the inverse magnetostriction effect). The magnetization state is measured locally by anisotropic magnetoresistance (AMR). The ferromagnetic NW plays thus the role of a mechanical probe that allows the effects of mechanical strain to be characterized and described qualitatively and quantitatively. The inverse magnetostriction was found to be responsible for a quasi-disappearance of the AMR signal for a variation of the order of ΔT ≈ 10 K. In other terms, the variation of the magnetization due to the stress compensates the effect of external magnetic field applied on the NW resistance. The induced stress field in a single Ni NW was found 1000 time higher than the bulk stress field (due to thermal expansion measured on the PVDF). This amplification could be attributed to three nanoscopic effects: (1) a stress mismatch between the Ni NW and the membrane, (2) a non-negligible role of the surface tension on Ni NW Young modulus, and (3) the possibility of non-linear stress-strain law. We investigate here the role of these different contributions using track-etched polymer membranes irradiated at various angles (αirrad) leading to, after electrodeposition, embedded Ni NWs of different orientations.

  19. Angle dependence on the anisotropic magnetoresistance amplitude of a single-contacted Ni nanowire subjected to a thermo-mechanical strain

    International Nuclear Information System (INIS)

    Melilli, G.; Madon, B.; Wegrowe, J.-E.; Clochard, M.-C.

    2015-01-01

    The effects of thermoelastic and piezoelectric strain of an active track-etched β-PVDF polymer matrix on an electrodeposited single-contacted Ni nanowire (NW) are investigated at the nanoscale by measuring the change of magnetization (i.e. using the inverse magnetostriction effect). The magnetization state is measured locally by anisotropic magnetoresistance (AMR). The ferromagnetic NW plays thus the role of a mechanical probe that allows the effects of mechanical strain to be characterized and described qualitatively and quantitatively. The inverse magnetostriction was found to be responsible for a quasi-disappearance of the AMR signal for a variation of the order of ΔT ≈ 10 K. In other terms, the variation of the magnetization due to the stress compensates the effect of external magnetic field applied on the NW resistance. The induced stress field in a single Ni NW was found 1000 time higher than the bulk stress field (due to thermal expansion measured on the PVDF). This amplification could be attributed to three nanoscopic effects: (1) a stress mismatch between the Ni NW and the membrane, (2) a non-negligible role of the surface tension on Ni NW Young modulus, and (3) the possibility of non-linear stress–strain law. We investigate here the role of these different contributions using track-etched polymer membranes irradiated at various angles (α irrad ) leading to, after electrodeposition, embedded Ni NWs of different orientations.

  20. Gate-Tunable Spin Exchange Interactions and Inversion of Magnetoresistance in Single Ferromagnetic ZnO Nanowires.

    Science.gov (United States)

    Modepalli, Vijayakumar; Jin, Mi-Jin; Park, Jungmin; Jo, Junhyeon; Kim, Ji-Hyun; Baik, Jeong Min; Seo, Changwon; Kim, Jeongyong; Yoo, Jung-Woo

    2016-04-26

    Electrical control of ferromagnetism in semiconductor nanostructures offers the promise of nonvolatile functionality in future semiconductor spintronics. Here, we demonstrate a dramatic gate-induced change of ferromagnetism in ZnO nanowire (NW) field-effect transistors (FETs). Ferromagnetism in our ZnO NWs arose from oxygen vacancies, which constitute deep levels hosting unpaired electron spins. The magnetic transition temperature of the studied ZnO NWs was estimated to be well above room temperature. The in situ UV confocal photoluminescence (PL) study confirmed oxygen vacancy mediated ferromagnetism in the studied ZnO NW FET devices. Both the estimated carrier concentration and temperature-dependent conductivity reveal the studied ZnO NWs are at the crossover of the metal-insulator transition. In particular, gate-induced modulation of the carrier concentration in the ZnO NW FET significantly alters carrier-mediated exchange interactions, which causes even inversion of magnetoresistance (MR) from negative to positive values. Upon sweeping the gate bias from -40 to +50 V, the MRs estimated at 2 K and 2 T were changed from -11.3% to +4.1%. Detailed analysis on the gate-dependent MR behavior clearly showed enhanced spin splitting energy with increasing carrier concentration. Gate-voltage-dependent PL spectra of an individual NW device confirmed the localization of oxygen vacancy-induced spins, indicating that gate-tunable indirect exchange coupling between localized magnetic moments played an important role in the remarkable change of the MR.

  1. A review of the electrical properties of semiconductor nanowires: insights gained from terahertz conductivity spectroscopy

    Science.gov (United States)

    Joyce, Hannah J.; Boland, Jessica L.; Davies, Christopher L.; Baig, Sarwat A.; Johnston, Michael B.

    2016-10-01

    Accurately measuring and controlling the electrical properties of semiconductor nanowires is of paramount importance in the development of novel nanowire-based devices. In light of this, terahertz (THz) conductivity spectroscopy has emerged as an ideal non-contact technique for probing nanowire electrical conductivity and is showing tremendous value in the targeted development of nanowire devices. THz spectroscopic measurements of nanowires enable charge carrier lifetimes, mobilities, dopant concentrations and surface recombination velocities to be measured with high accuracy and high throughput in a contact-free fashion. This review spans seminal and recent studies of the electronic properties of nanowires using THz spectroscopy. A didactic description of THz time-domain spectroscopy, optical pump-THz probe spectroscopy, and their application to nanowires is included. We review a variety of technologically important nanowire materials, including GaAs, InAs, InP, GaN and InN nanowires, Si and Ge nanowires, ZnO nanowires, nanowire heterostructures, doped nanowires and modulation-doped nanowires. Finally, we discuss how THz measurements are guiding the development of nanowire-based devices, with the example of single-nanowire photoconductive THz receivers.

  2. Rare earth silicide nanowires on silicon surfaces

    International Nuclear Information System (INIS)

    Wanke, Martina

    2008-01-01

    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti Γ point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi 2 -monolayer and the Dy 3 Si 5 -multilayer on the Si(111) surface are investigated in comparison to the known ErSi 2 /Si(111) and Er 3 Si 5 /Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the vector k parallel space is elliptical at the anti M points, while the hole pocket at the anti Γ point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas of the sample surface, which are oriented

  3. Synthesis of nanostructures in nanowires using sequential catalyst reactions

    Science.gov (United States)

    Panciera, F.; Chou, Y.-C.; Reuter, M.C.; Zakharov, D.; Stach, E.A.; Hofmann, S.; Ross, F.M.

    2016-01-01

    Nanowire growth by the vapor-liquid-solid process enables a high level of control over nanowire composition, diameter, growth direction, branching and kinking, periodic twinning, and crystal structure. The tremendous impact of VLS-grown nanowires is due to this structural versatility, generating applications ranging from solid state lighting and single photon sources to thermoelectric devices. Here we show that the morphology of these nanostructures can be further tailored by using the liquid droplets that catalyze nanowire growth as a “mixing bowl”, in which growth materials are sequentially supplied to nucleate new phases. Growing within the liquid, these phases adopt the shape of faceted nanocrystals that are then incorporated into the nanowires by further growth. We demonstrate this concept by epitaxially incorporating metal silicide nanocrystals into Si nanowires with defect-free interfaces, and discuss how this process can be generalized to create complex nanowire-based heterostructures. PMID:26168344

  4. Individually grown cobalt nanowires as magnetic force microscopy probes.

    Science.gov (United States)

    Alotaibi, Shuaa; Samba, Joshua; Pokharel, Sabin; Lan, Yucheng; Uradu, Kelechi; Afolabi, Ayodeji; Unlu, Ilyas; Basnet, Gobind; Aslan, Kadir; Flanders, Bret N; Lisfi, Abdellah; Ozturk, Birol

    2018-02-26

    AC electric fields were utilized in the growth of individual high-aspect ratio cobalt nanowires from simple salt solutions using the Directed Electrochemical Nanowire Assembly method. Nanowire diameters were tuned from the submicron scale to 40 nm by adjusting the AC voltage frequency and the growth solution concentration. The structural properties of the nanowires, including shape and crystallinity, were identified using electron microscopy. Hysteresis loops obtained along different directions of an individual nanowire using vibrating sample magnetometry showed that the magnetocrystalline anisotropy energy has the same order of magnitude as the shape anisotropy energy. Additionally, the saturation magnetization of an individual cobalt nanowire was estimated to be close to the bulk single crystal value. A small cobalt nanowire segment was grown from a conductive atomic force microscope cantilever tip that was utilized in magnetic force microscopy (MFM) imaging. The fabricated MFM tip provided moderate quality magnetic images of an iron-cobalt thin-film sample.

  5. Silicon nanowire circuits fabricated by AFM oxidation nanolithography

    Energy Technology Data Exchange (ETDEWEB)

    MartInez, Ramses V; MartInez, Javier; Garcia, Ricardo, E-mail: rgarcia@imm.cnm.csic.es [Instituto de Microelectronica de Madrid, CSIC, Isaac Newton 8, 28760 Tres Cantos, Madrid (Spain)

    2010-06-18

    We report a top-down process for the fabrication of single-crystalline silicon nanowire circuits and devices. Local oxidation nanolithography is applied to define very narrow oxide masks on top of a silicon-on-insulator substrate. In a plasma etching, the nano-oxide mask generates a nanowire with a rectangular section. The nanowire width coincides with the lateral size of the mask. In this way, uniform and well-defined transistors with channel widths in the 10-20 nm range have been fabricated. The nanowires can be positioned with sub-100 nm lateral accuracy. The transistors exhibit an on/off current ratio of 10{sup 5}. The atomic force microscope nanolithography offers full control of the nanowire's shape from straight to circular or a combination of them. It also enables the integration of several nanowires within the same circuit. The nanowire transistors have been applied to detect immunological processes.

  6. A detailed study of magnetization reversal in individual Ni nanowires

    KAUST Repository

    Vidal, Enrique Vilanova

    2015-01-19

    Magnetic nanowires have emerged as essential components for a broad range of applications. In many cases, a key property of these components is the switching field, which is studied as a function of the angle between the field and the nanowire. We found remarkable differences of up to 100% between the switching fields of different nanowires from the same fabrication batch. Our experimental results and micromagnetic simulations indicate that the nanowires exhibit a single domain behavior and that the switching mechanism includes vortex domain wall motion across the nanowire. The differences between the switching fields are attributed to different cross-sections of the nanowires, as found by electron microscopy. While a circular cross-section yields the smallest switching field values, any deviation from this shape results in an increase of the switching field. The shape of the nanowires\\' cross-sections is thus a critical parameter that has not been previously taken into account.

  7. Tunable magnetic nanowires for biomedical and harsh environment applications

    KAUST Repository

    Ivanov, Yurii P.

    2016-04-13

    We have synthesized nanowires with an iron core and an iron oxide (magnetite) shell by a facile low-cost fabrication process. The magnetic properties of the nanowires can be tuned by changing shell thicknesses to yield remarkable new properties and multi-functionality. A multi-domain state at remanence can be obtained, which is an attractive feature for biomedical applications, where a low remanence is desirable. The nanowires can also be encoded with different remanence values. Notably, the oxidation process of single-crystal iron nanowires halts at a shell thickness of 10 nm. The oxide shell of these nanowires acts as a passivation layer, retaining the magnetic properties of the iron core even during high-temperature operations. This property renders these core-shell nanowires attractive materials for application to harsh environments. A cell viability study reveals a high degree of biocompatibility of the core-shell nanowires.

  8. Mechanical properties and formation mechanisms of a wire of single gold atoms

    DEFF Research Database (Denmark)

    Rubio-Bollinger, G.; Bahn, Sune Rastad; Agrait, N.

    2001-01-01

    A scanning tunneling microscope supplemented with a force sensor is used to study the mechanical properties of a novel metallic nanostructure: a freely suspended chain of single gold atoms. We find that the bond strength of the nanowire is about twice that of a bulk metallic bond. We perform ab i...... stiffness of the nanostructure is strongly affected by the detailed local atomic arrangement at the chain bases.......A scanning tunneling microscope supplemented with a force sensor is used to study the mechanical properties of a novel metallic nanostructure: a freely suspended chain of single gold atoms. We find that the bond strength of the nanowire is about twice that of a bulk metallic bond. We perform ab...... initio calculations of the force at chain fracture and compare quantitatively with experimental measurements. The observed mechanical failure and nanoelastic processes involved during atomic wire fabrication are investigated using molecular dynamics simulations, and we find that the total effective...

  9. Photonic nanowires for quantum optics

    DEFF Research Database (Denmark)

    Munsch, M.; Claudon, J.; Bleuse, J.

    Photonic nanowires (PWs) are simple dielectric structures for which a very efficient and broadband spontaneous emission (SE) control has been predicted [1]. Recently, a single photon source featuring a record high efficiency was demonstrated using this geometry [2]. Using time-resolved micro-phot...

  10. Manganese oxide nanowires, films, and membranes and methods of making

    Science.gov (United States)

    Suib, Steven Lawrence [Storrs, CT; Yuan, Jikang [Storrs, CT

    2008-10-21

    Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves, and methods of making, are disclosed. A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve, and has an average length greater than about 10 micrometers and an average diameter of about 5 nanometers to about 100 nanometers. A film comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is stacked on a surface of a substrate, wherein the nanowires of each layer are substantially axially aligned. A free standing membrane comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is aggregately stacked, and wherein the nanowires of each layer are substantially axially aligned.

  11. Single-Crystalline Gold Nanowires Synthesized from Light-Driven Oriented Attachment and Plasmon-Mediated Self-Assembly of Gold Nanorods or Nanoparticles

    Science.gov (United States)

    Yu, Shang-Yang; Gunawan, Hariyanto; Tsai, Shiao-Wen; Chen, Yun-Ju; Yen, Tzu-Chen; Liaw, Jiunn-Woei

    2017-03-01

    Through the light-driven geometrically oriented attachment (OA) and self-assembly of Au nanorods (NRs) or nanoparticles (NPs), single-crystalline Au nanowires (NWs) were synthesized by the irradiation of a linearly-polarized (LP) laser. The process was conducted in a droplet of Au colloid on a glass irradiated by LP near-infrared (e.g. 1064 nm and 785 nm) laser beam of low power at room temperature and atmospheric pressure, without any additive. The FE-SEM images show that the cross sections of NWs are various: tetragonal, pentagonal or hexagonal. The EDS spectrum verifies the composition is Au, and the pattern of X-ray diffraction identifies the crystallinity of NWs with the facets of {111}, {200}, {220} and {311}. We proposed a hypothesis for the mechanism that the primary building units are aligned and coalesced by the plasmon-mediated optical torque and force to form the secondary building units. Subsequently, the secondary building units undergo the next self-assembly, and so forth the tertiary ones. The LP light guides the translational and rotational motions of these building units to perform geometrically OA in the side-by-side, end-to-end and T-shaped manners. Consequently, micron-sized ordered mesocrystals are produced. Additionally, the concomitant plasmonic heating causes the annealing for recrystallizing the mesocrystals in water.

  12. Tuning the electrocrystallization parameters of semiconducting Co[TCNQ]2-based materials to yield either single nanowires or crystalline thin films.

    Science.gov (United States)

    Nafady, Ayman; Bond, Alan M; Bilyk, Alexander; Harris, Alexander R; Bhatt, Anand I; O'Mullane, Anthony P; De Marco, Roland

    2007-02-28

    Electrocrystallization of single nanowires and/or crystalline thin films of the semiconducting and magnetic Co[TCNQ]2(H2O)2 (TCNQ=tetracyanoquinodimethane) charge-transfer complex onto glassy carbon, indium tin oxide, or metallic electrodes occurs when TCNQ is reduced in acetonitrile (0.1 M [NBu4][ClO4]) in the presence of hydrated cobalt(II) salts. The morphology of the deposited solid is potential dependent. Other factors influencing the electrocrystallization process include deposition time, concentration, and identity of the Co2+(MeCN) counteranion. Mechanistic details have been elucidated by use of cyclic voltammetry, chronoamperometry, electrochemical quartz crystal microbalance, and galvanostatic methods together with spectroscopic and microscopic techniques. The results provide direct evidence that electrocrystallization takes place through two distinctly different, potential-dependent mechanisms, with progressive nucleation and 3-D growth being controlled by the generation of [TCNQ]*- at the electrode and the diffusion of Co2+(MeCN) from the bulk solution. Images obtained by scanning electron microscopy reveal that electrocrystallization of Co[TCNQ]2(H2O)2 at potentials in the range of 0.1-0 V vs Ag/AgCl, corresponding to the [TCNQ]0/*- diffusion-controlled regime, gives rise to arrays of well-separated, needle-shaped nanowires via the overall reaction 2[TCNQ]*-(MeCN)+Co2+(MeCN)+2H2O right harpoon over left harpoon {Co[TCNQ]2(H2O)2}(s). In this potential region, nucleation and growth occur at randomly separated defect sites on the electrode surface. In contrast, at more negative potentials, a compact film of densely packed, uniformly oriented, hexagonal-shaped nanorods is formed. This is achieved at a substantially increased number of nucleation sites created by direct reduction of a thin film of what is proposed to be cobalt-stabilized {(Co2+)([TCNQ2]*-)2} dimeric anion. Despite the potential-dependent morphology of the electrocrystallized Co[TCNQ]2(H2O)2

  13. Fabry-Pérot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure.

    Science.gov (United States)

    Yang, Lin; Motohisa, Junichi; Fukui, Takashi; Jia, Lian Xi; Zhang, Lei; Geng, Ming Min; Chen, Pin; Liu, Yu Liang

    2009-05-25

    We report on the fabrication of the nanowires with InGaAs/GaAs heterostructures on the GaAs(111)B substrate using selective-area metal organic vapor phase epitaxy. Fabry-Pérot microcavity modes were observed in the nanowires with perfect end facets dispersed onto the silicon substrate and not observed in the free-standing nanowires. We find that the calculated group refractive indices only considering the material dispersion do not agree with the experimentally determined values although this method was used by some researchers. The calculated group refractive indices considering both the material dispersion and the waveguide dispersion agree with the experimentally determined values well. We also find that Fabry-Pérot microcavity modes are not observable in the nanowires with the width less than about 180 nm, which is mainly caused by their poor reflectivity at the end facets due to their weak confinement to the optical field.

  14. Heterojunction nanowires having high activity and stability for the reduction of oxygen: Formation by self-assembly of iron phthalocyanine with single walled carbon nanotubes (FePc/SWNTs)

    KAUST Repository

    Zhu, Jia

    2014-04-01

    A self-assembly approach to preparing iron phthalocyanine/single-walled carbon nanotube (FePc/SWNT) heterojunction nanowires as a new oxygen reduction reaction (ORR) electrocatalyst has been developed by virtue of water-adjusted dispersing in 1-cyclohexyl-pyrrolidone (CHP) of the two components. The FePc/SWNT nanowires have a higher Fermi level compared to pure FePc (d-band center, DFT. =. -0.69. eV versus -0.87. eV, respectively). Consequently, an efficient channel for transferring electron to the FePc surface is readily created, facilitating the interaction between FePc and oxygen, so enhancing the ORR kinetics. This heterojunction-determined activity in ORR illustrates a new stratagem to preparing non-noble ORR electrocatalysts of significant importance in constructing real-world fuel cells. © 2013 Elsevier Inc.

  15. Formation and Device Application of Ge Nanowire Heterostructures via Rapid Thermal Annealing

    OpenAIRE

    Tang, Jianshi; Wang, Chiu-Yen; Xiu, Faxian; Zhou, Yi; Chen, Lih-Juann; Wang, Kang L.

    2011-01-01

    We reviewed the formation of Ge nanowire heterostructure and its field-effect characteristics by a controlled reaction between a single-crystalline Ge nanowire and Ni contact pads using a facile rapid thermal annealing process. Scanning electron microscopy and transmission electron microscopy demonstrated a wide temperature range of 400~500°C to convert the Ge nanowire to a single-crystalline Ni2Ge/Ge/Ni2Ge nanowire heterostructure with atomically sharp interfaces. More importantly, we studie...

  16. Constructing a generalized network design model to study air distribution in ventilation networks in subway with a single-track tunnel

    Science.gov (United States)

    Lugin, IV

    2018-03-01

    In focus are the features of construction of the generalized design model for the network method to study air distribution in ventilation system in subway with the single-track tunnel. The generalizations, assumptions and simplifications included in the model are specified. The air distribution is calculated with regard to the influence of topology and air resistances of the ventilation network sections. The author studies two variants of the subway line: half-open and closed with dead end on the both sides. It is found that the total air exchange at a subway station depends on the station location within the line. The operating mode of fans remains unaltered in this case. The article shows that elimination of air leakage in the station ventilation room allows an increase in the air flow rate by 7–8% at the same energy consumption by fans. The influence of the stop of a train in the tunnel on the air distribution is illustrated.

  17. Reliability of a semi-automated 3D-CT measuring method for tunnel diameters after anterior cruciate ligament reconstruction: A comparison between soft-tissue single-bundle allograft vs. autograft.

    Science.gov (United States)

    Robbrecht, Cedric; Claes, Steven; Cromheecke, Michiel; Mahieu, Peter; Kakavelakis, Kyriakos; Victor, Jan; Bellemans, Johan; Verdonk, Peter

    2014-10-01

    Post-operative widening of tibial and/or femoral bone tunnels is a common observation after ACL reconstruction, especially with soft-tissue grafts. There are no studies comparing tunnel widening in hamstring autografts versus tibialis anterior allografts. The goal of this study was to observe the difference in tunnel widening after the use of allograft vs. autograft for ACL reconstruction, by measuring it with a novel 3-D computed tomography based method. Thirty-five ACL-deficient subjects were included, underwent anatomic single-bundle ACL reconstruction and were evaluated at one year after surgery with the use of 3-D CT imaging. Three independent observers semi-automatically delineated femoral and tibial tunnel outlines, after which a best-fit cylinder was derived and the tunnel diameter was determined. Finally, intra- and inter-observer reliability of this novel measurement protocol was defined. In femoral tunnels, the intra-observer ICC was 0.973 (95% CI: 0.922-0.991) and the inter-observer ICC was 0.992 (95% CI: 0.982-0.996). In tibial tunnels, the intra-observer ICC was 0.955 (95% CI: 0.875-0.985). The combined inter-observer ICC was 0.970 (95% CI: 0.987-0.917). Tunnel widening was significantly higher in allografts compared to autografts, in the tibial tunnels (p=0.013) as well as in the femoral tunnels (p=0.007). To our knowledge, this novel, semi-automated 3D-computed tomography image processing method has shown to yield highly reproducible results for the measurement of bone tunnel diameter and area. This series showed a significantly higher amount of tunnel widening observed in the allograft group at one-year follow-up. Level II, Prospective comparative study. Copyright © 2014 Elsevier B.V. All rights reserved.

  18. Directed organization of gold nanoclusters on silver nanowires: A step forward in heterostructure assembly

    Science.gov (United States)

    Sharma, Jadab; Vivek, J. P.; Vijayamohanan, Kunjukrishna P.; Singh, Poonam; Dharmadhikari, C. V.

    2006-05-01

    We investigate the directed assembly of tridecylamine protected gold nanoclusters of 4-5nm size on functionalized silver nanowires of 55-60nm diameter and the electron transfer behavior of this integrated structure using transmission electron microscopy, non-contact atomic force microscopy, and scanning tunneling microscopy/spectroscopy. Linear I-V for bare silver nanowire suggests metallic behavior but high tunnel resistance indicates presence of insulating layer on the surface. Identical I-Vs obtained for isolated gold nanoparticle and heterostructure suggests that electron transport across nanowires in the latter is governed by gold nanoparticles in contrast to expected ballistic or diffusive transport along their length.

  19. Nanowire Optoelectronics

    Directory of Open Access Journals (Sweden)

    Wang Zhihuan

    2015-12-01

    Full Text Available Semiconductor nanowires have been used in a variety of passive and active optoelectronic devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs, lasers, sensors, and optical antennas. We review the optical properties of these nanowires in terms of absorption, guiding, and radiation of light, which may be termed light management. Analysis of the interaction of light with long cylindrical/hexagonal structures with subwavelength diameters identifies radial resonant modes, such as Leaky Mode Resonances, or Whispering Gallery modes. The two-dimensional treatment should incorporate axial variations in “volumetric modes,”which have so far been presented in terms of Fabry–Perot (FP, and helical resonance modes. We report on finite-difference timedomain (FDTD simulations with the aim of identifying the dependence of these modes on geometry (length, width, tapering, shape (cylindrical, hexagonal, core–shell versus core-only, and dielectric cores with semiconductor shells. This demonstrates how nanowires (NWs form excellent optical cavities without the need for top and bottommirrors. However, optically equivalent structures such as hexagonal and cylindrical wires can have very different optoelectronic properties meaning that light management alone does not sufficiently describe the observed enhancement in upward (absorption and downward transitions (emission of light inNWs; rather, the electronic transition rates should be considered. We discuss this “rate management” scheme showing its strong dimensional dependence, making a case for photonic integrated circuits (PICs that can take advantage of the confluence of the desirable optical and electronic properties of these nanostructures.

  20. COMPARATIVE STUDY OF ARTHROSCOPIC SINGLE BUNDLE ANTERIOR CRUCIATE LIGAMENT RECONSTRUCTION AND NON-ANATOMICAL DOUBLE BUNDLE WITH SINGLE TIBIAL TUNNEL ANTERIOR CRUCIATE LIGAMENT RECONSTRUCTION WITH SEMITENDINOSUS ± GRACILIS AUTOGRAFTS USING LAXOMETRY

    Directory of Open Access Journals (Sweden)

    Sivananda

    2016-01-01

    Full Text Available BACKGROUND The knee joint is the most commonly injured of all joints and the ACL is the most commonly injured ligament. Arthroscopic reconstruction of ACL has become gold standard in treating these injuries. AIM 1. To compare the short-term results of ACL reconstruction using single bundle (one Tibial + one Femoral tunnel and non-anatomical double-bundle (one Tibial + two Femoral tunnels techniques using Hamstrings (Semitendinosus ± Gracilis graft. 2. To evaluate ACL graft reconstruction stability measured by laxometry and to find out an association with clinical findings. MATERIAL & METHODS We performed a prospective study between 2014-2015 of 20 case of ACL injuries & compared single bundle reconstruction with Non – anatomical double Bundle reconstruction with semitendinosus ± Gracilis, Autograft using laxometry. CONCLUSION Arthroscopic Non-anatomical double ACL Reconstruction is Bio-mechanically stable reconstruction resembling anatomy of the ACL.

  1. Scalable Top-Down Approach Tailored by Interferometric Lithography to Achieve Large-Area Single-Mode GaN Nanowire Laser Arrays on Sapphire Substrate.

    Science.gov (United States)

    Behzadirad, Mahmoud; Nami, Mohsen; Wostbrock, Neal; Zamani Kouhpanji, Mohammad Reza; Feezell, Daniel F; Brueck, Steven R J; Busani, Tito

    2018-03-27

    GaN nanowires are promising for optical and optoelectronic applications because of their waveguiding properties and large optical band gap. However, developing a precise, scalable, and cost-effective fabrication method with a high degree of controllability to obtain high-aspect-ratio nanowires with high optical properties and minimum crystal defects remains a challenge. Here, we present a scalable two-step top-down approach using interferometric lithography, for which parameters can be controlled precisely to achieve highly ordered arrays of nanowires with excellent quality and desired aspect ratios. The wet-etch mechanism is investigated, and the etch rates of m-planes {11̅00} (sidewalls) were measured to be 2.5 to 70 nm/h depending on the Si doping concentration. Using this method, uniform nanowire arrays were achieved over a large area (>10 5 μm 2 ) with an spect ratio as large as 50, a radius as small as 17 nm, and atomic-scale sidewall roughness (vertical cavity nanowire arrays with different doping concentrations on a sapphire substrate was interestingly observed in photoluminescence measurements. High Q-factors of ∼1139-2443 were obtained in nanowire array lasers with a radius and length of 65 nm and 2 μm, respectively, corresponding to a line width of 0.32-0.15 nm (minimum threshold of 3.31 MW/cm 2 ). Our results show that fabrication of high-quality GaN nanowire arrays with adaptable aspect ratio and large-area uniformity is feasible through a top-down approach using interferometric lithography and is promising for fabrication of III-nitride-based nanophotonic devices (radial/axial) on the original substrate.

  2. Synthesis and characterization of straight and stacked-sheet AlN nanowires with high purity

    International Nuclear Information System (INIS)

    Lei, M.; Yang, H.; Li, P.G.; Tang, W.H.

    2008-01-01

    Large-scale AlN nanowires with hexagonal crystal structure were synthesized by the direct nitridation method at high temperatures. The experimental results indicate that these single-crystalline AlN nanowires have high purity and consist of straight and stacked-sheet nanowires. It is found that straight AlN nanowire grows along [1, 1, -2, 0] direction, whereas the stacked-sheet nanowire with hexagonal cross section is along [0 0 0 1] direction. It is thought that vapor-solid (VS) mechanism should be responsible for the growth of AlN nanowires

  3. Study of the effect of varying core diameter, shell thickness and strain velocity on the tensile properties of single crystals of Cu-Ag core-shell nanowire using molecular dynamics simulations

    Science.gov (United States)

    Sarkar, Jit; Das, D. K.

    2018-01-01

    Core-shell type nanostructures show exceptional properties due to their unique structure having a central solid core of one type and an outer thin shell of another type which draw immense attention among researchers. In this study, molecular dynamics simulations are carried out on single crystals of copper-silver core-shell nanowires having wire diameter ranging from 9 to 30 nm with varying core diameter, shell thickness, and strain velocity. The tensile properties like yield strength, ultimate tensile strength, and Young's modulus are studied and correlated by varying one parameter at a time and keeping the other two parameters constant. The results obtained for a fixed wire size and different strain velocities were extrapolated to calculate the tensile properties like yield strength and Young's modulus at standard strain rate of 1 mm/min. The results show ultra-high tensile properties of copper-silver core-shell nanowires, several times than that of bulk copper and silver. These copper-silver core-shell nanowires can be used as a reinforcing agent in bulk metal matrix for developing ultra-high strength nanocomposites.

  4. Designing and building nanowires: directed nanocrystal self-assembly into radically branched and zigzag PbS nanowires

    International Nuclear Information System (INIS)

    Xu Fan; Ma Xin; Gerlein, L Felipe; Cloutier, Sylvain G

    2011-01-01

    Lead sulfide nanowires with controllable optoelectronic properties would be promising building blocks for various applications. Here, we report the hot colloidal synthesis of radically branched and zigzag nanowires through self-attachment of star-shaped and octahedral nanocrystals in the presence of multiple surfactants. We obtained high-quality single-crystal nanowires with uniform diameter along the entire length, and the size of the nanowire can be tuned by tailoring the reaction parameters. This slow oriented attachment provides a better understanding of the intricacies of this complex nanocrystal assembly process. Meanwhile, these self-assembled nanowire structures have appealing lateral conformations with narrow side arms or highly faceted edges, where strong quantum confinement can occur. Consequently, the single-crystal nanowire structures exhibit strong photoluminescence in the near-infrared region with a large blue-shift compared to the bulk material.

  5. Attosecond-controlled photoemission from metal nanowire tips in the few-electron regime

    Directory of Open Access Journals (Sweden)

    B. Ahn

    2017-03-01

    Full Text Available Metal nanotip photoemitters have proven to be versatile in fundamental nanoplasmonics research and applications, including, e.g., the generation of ultrafast electron pulses, the adiabatic focusing of plasmons, and as light-triggered electron sources for microscopy. Here, we report the generation of high energy photoelectrons (up to 160 eV in photoemission from single-crystalline nanowire tips in few-cycle, 750-nm laser fields at peak intensities of (2-7.3 × 1012 W/cm2. Recording the carrier-envelope phase (CEP-dependent photoemission from the nanowire tips allows us to identify rescattering contributions and also permits us to determine the high-energy cutoff of the electron spectra as a function of laser intensity. So far these types of experiments from metal nanotips have been limited to an emission regime with less than one electron per pulse. We detect up to 13 e/shot and given the limited detection efficiency, we expect up to a few ten times more electrons being emitted from the nanowire. Within the investigated intensity range, we find linear scaling of cutoff energies. The nonlinear scaling of electron count rates is consistent with tunneling photoemission occurring in the absence of significant charge interaction. The high electron energy gain is attributed to field-induced rescattering in the enhanced nanolocalized fields at the wires apex, where a strong CEP-modulation is indicative of the attosecond control of photoemission.

  6. Attosecond-controlled photoemission from metal nanowire tips in the few-electron regime

    KAUST Repository

    Ahn, B.

    2017-02-07

    Metal nanotip photoemitters have proven to be versatile in fundamental nanoplasmonics research and applications, including, e.g., the generation of ultrafast electron pulses, the adiabatic focusing of plasmons, and as light-triggered electron sources for microscopy. Here, we report the generation of high energy photoelectrons (up to 160 eV) in photoemission from single-crystalline nanowire tips in few-cycle, 750-nm laser fields at peak intensities of (2-7.3) × 1012 W/cm2. Recording the carrier-envelope phase (CEP)-dependent photoemission from the nanowire tips allows us to identify rescattering contributions and also permits us to determine the high-energy cutoff of the electron spectra as a function of laser intensity. So far these types of experiments from metal nanotips have been limited to an emission regime with less than one electron per pulse. We detect up to 13 e/shot and given the limited detection efficiency, we expect up to a few ten times more electrons being emitted from the nanowire. Within the investigated intensity range, we find linear scaling of cutoff energies. The nonlinear scaling of electron count rates is consistent with tunneling photoemission occurring in the absence of significant charge interaction. The high electron energy gain is attributed to field-induced rescattering in the enhanced nanolocalized fields at the wires apex, where a strong CEP-modulation is indicative of the attosecond control of photoemission.

  7. Microscopic theory for a ferromagnetic nanowire/superconductor heterostructure: Transport, fluctuations, and topological superconductivity

    Science.gov (United States)

    Galitski, Victor; Takei, So; Condensed Matter Theory Center; Joint Quantum Institute Team

    2013-03-01

    Motivated by the recent experiment of Wang et al. [Nat. Phys. 6, 389 (2010)], who observed a highly unusual transport behavior of ferromagnetic cobalt nanowires proximity-coupled to superconducting electrodes, we study the proximity effect and temperature-dependent transport in such a mesoscopic hybrid structure. It is assumed that the asymmetry in the tunneling barrier gives rise to the Rashba spin-orbit coupling in the barrier that enables induced p-wave superconductivity in the ferromagnet to exist. We first develop a microscopic theory of Andreev scattering at the spin-orbit-coupled interface, derive a set of self-consistent boundary conditions, and find an expression for the p-wave minigap in terms of the microscopic parameters of the contact. Second, we study the temperature dependence of the resistance near the superconducting transition, and we find that it should generally feature a fluctuation-induced peak. The upturn in resistance is related to the suppression of the single-particle density of states due to the formation of fluctuating pairs, whose tunneling is suppressed. In conclusion, we discuss this and related setups involving ferromagnetic nanowires in the context of one-dimensional topological superconductors. Funding support: DOE-BES (DESC0001911).

  8. Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

    Science.gov (United States)

    Majumdar,; Arun, [Orinda, CA; Shakouri, Ali [Santa Cruz, CA; Sands, Timothy D [Moraga, CA; Yang, Peidong [Berkeley, CA; Mao, Samuel S [Berkeley, CA; Russo, Richard E [Walnut Creek, CA; Feick, Henning [Kensington, CA; Weber, Eicke R [Oakland, CA; Kind, Hannes [Schaffhausen, CH; Huang, Michael [Los Angeles, CA; Yan, Haoquan [Albany, CA; Wu, Yiying [Albany, CA; Fan, Rong [El Cerrito, CA

    2009-08-04

    One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

  9. Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

    Energy Technology Data Exchange (ETDEWEB)

    Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

    2018-01-30

    One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

  10. Methods Of Fabricating Nanosturctures And Nanowires And Devices Fabricated Therefrom

    Science.gov (United States)

    Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

    2006-02-07

    One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

  11. Stability of Organic Nanowires

    DEFF Research Database (Denmark)

    Balzer, F.; Schiek, M.; Wallmann, I.

    2011-01-01

    atomic force microscopy (AFM). Aging experiments under ambient conditions already show substantial morphological changes. Nanoscopic organic clusters, which initially coexist with the nanowires, vanish within hours. Thermal annealing of nanowire samples leads to even more pronounced morphology changes...

  12. Analytical modeling of electrical characteristics of coaxial nanowire FETs

    Science.gov (United States)

    Kargar, Alireza; Ghayour, Rahim

    2011-03-01

    In this paper, an analytical approach based on ballistic current transport is presented to investigate the electrical characteristics of the coaxial nanowire field effect transistor (CNWFET). The potential distribution along the nanowire is derived analytically by applying Laplace equation. In addition to application of WKB approximation and ballistic transport, tunneling process and quantum state of energy are implemented to determine the amount of electron transport along the nanowire from the source to the drain terminals. To consider the tunneling phenomena, WKB approximation is used and the transmission coefficients on both sides of the channel are obtained separately. In ballistic regime, an expression for channel current in terms of the bias voltages and Schottky barrier height (SBH) is derived. The results confirm a close correlation between the current equation of this work and the results presented via other approaches.

  13. Semiconductor Nanowires for Photoelectrochemical Water Splitting

    Science.gov (United States)

    Hwang, Yun Jeong

    Photolysis of water with semiconductor materials has been investigated intensely as a clean and renewable energy resource by storing solar energy in chemical bonds such as hydrogen. One-dimensional (1D) nanostructures such as nanowires can provide several advantages for photoelectrochemical (PEC) water splitting due to their high surface areas and excellent charge transport and collection efficiency. This dissertation discusses various nanowire photoelectrodes for single or dual semiconductor systems, and their linked PEC cells for self-driven water splitting. After an introduction of solar water splitting in the first chapter, the second chapter demonstrates water oxidative activities of hydrothermally grown TiO2 nanowire arrays depending on their length and surface properties. The photocurrents with TiO2 nanowire arrays approach saturation due to their poor charge collection efficiency with longer nanowires despite increased photon absorption efficiency. Epitaxial grains of rutile atomic layer deposition (ALD) shell on TiO2 nanowire increase the photocurrent density by 1.5 times due to improved charge collection efficiency especially in the short wavelength region. Chapter three compares the photocurrent density of the planar Si and Si nanowire arrays coated by anatase ALD TiO 2 thin film as a model system of a dual bandgap system. The electroless etched Si nanowire coated by ALD TiO2 (Si EENW/TiO2) shows 2.5 times higher photocurrent density due to lower reflectance and higher surface area. Also, this chapter illustrates that n-Si/n-TiO2 heterojunction is a promising structure for the photoanode application of a dual semiconductor system, since it can enhance the photocurrent density compared to p-Si/n-TiO 2 junction with the assistance of bend banding at the interface. Chapter four demonstrates the charge separation and transport of photogenerated electrons and holes within a single asymmetric Si/TiO2 nanowire. Kelvin probe force microscopy measurements show

  14. Coherent Anti-Stokes and Coherent Stokes in Raman Scattering by Superconducting Nanowire Single-Photon Detector for Temperature Measurement

    Directory of Open Access Journals (Sweden)

    Annepu Venkata Naga Vamsi

    2016-01-01

    Full Text Available We have reported the measurement of temperature by using coherent anti-Stroke and coherent Stroke Raman scattering using superconducting nano wire single-photon detector. The measured temperatures by both methods (Coherent Anti-Raman scattering & Coherent Stroke Raman scattering and TC 340 are in good accuracy of ± 5 K temperature range. The length of the pipe line under test can be increased by increasing the power of the pump laser. This methodology can be widely used to measure temperatures at instantaneous positions in test pipe line or the entire temperature of the pipe line under test.

  15. Multi-channeled NbN superconducting single photon detectors (SSPDs) system with NbN meander nanowires

    International Nuclear Information System (INIS)

    Fujiwara, Mikio; Sasaki, Masahide; Miki, Shigehito; Wang Zhen

    2009-01-01

    A superconducting single photon detector (SSPD) is promising candidate of the detector in a quantum key distribution (QKD) system, because of its low dark count and high speed repetition rate. We have developed the SSPD system cooled by a GM cryocooler. In this system, and the work surface can be cooled 2.95 K and up to 6 SSPDs can be installed. The active areas of SSPDs are 10x10 μm 2 or 20x20 μm 2 , and the system detection efficiency at dark count rate of 100 Hz reached 2.6% at a wavelength of 1550 nm.

  16. Theoretical studies of the stretching behavior of carbon nanowires and their superplasticity

    Energy Technology Data Exchange (ETDEWEB)

    Li, H. [Physics Department, Ocean University of China, Qingdao (China); Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, School of Material Science and Engineering, Shandong University (China)], E-mail: lihuilmy@hotmail.com; Sun, F.W.; Li, Y.F. [Physics Department, Ocean University of China, Qingdao (China); Liu, X.F. [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, School of Material Science and Engineering, Shandong University (China); Liew, K.M. [Department of Building and Construction, City University of Hong Kong, Kowloon (Hong Kong)

    2008-09-15

    The tensile deformation of carbon nanowire (CNW) is examined by molecular dynamics method. Results indicate that the carbon nanowire undergoes superplastic deformation. The maximum tensile strain of the carbon nanowire could increase to nearly 245% before tensile failure. The maximum stress for a CNW is 16.65 GPa which is lower than carbon nanotube. During the deformation, the carbon nanowire is found to be drawn a single atomic chain.

  17. Electrochemical fabrication of ultralow noise metallic nanowires with hcp crystalline lattice

    OpenAIRE

    Singh, Amrita; Sai, T. Phanindra; Ghosh, Arindam

    2008-01-01

    We experimentally demonstrate that low-frequency electrical noise in silver nanowires is heavily suppressed when the crystal structure of the nanowires is hexagonal closed pack (hcp) rather than face centered cubic (fcc). Using a low-potential electrochemical method we have grown single crystalline silver nanowires with hcp crystal structure, in which the noise at room temperature is two to six orders of magnitude lower than that in the conventional fcc nanowires of the same diameter. We sugg...

  18. Electronic homogeneity of nanowire heterostructure Light Emitting Diodes (LEDs)

    Science.gov (United States)

    Selcu, Camelia; May, Brelon J.; Sarwar, A. T. M. Golam; Myers, Roberto C.

    In addition to low defect densities and great tunability bandgap within a single heterostructure, the possibility of growing (Al, In,_) GaN nanowire heterostructure LEDs on different substrates while maintaining their high electronic and optical properties makes them very attractive. We investigated the electronic homogeneity of the (Al, In,_) GaN nanowire ensemble by acquiring current maps at certain applied biases using conductive AFM. By taken IVs on individual nanowires, we found that different wires have different turn on voltages and that some of the nanowires degrade due to the applied bias.

  19. Permanent bending and alignment of ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Borschel, Christian; Spindler, Susann; Oertel, Michael; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Lerose, Damiana [MPI fuer Mikrostrukturphysik, Weinberg 2, 06120 Halle/Saale (Germany); Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Bochmann, Arne [Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Christiansen, Silke H. [Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); MPI fuer die Physik des Lichts, Guenther-Scharowsky-Str. 1, 91058 Erlangen (Germany); Nietzsche, Sandor [Zentrum fuer Elektronenmikroskopie, Friedrich-Schiller-Universitaet Jena, Ziegelmuehlenweg 1, 07743 Jena (Germany)

    2011-07-01

    Ion beams can be used to bend or re-align nanowires permanently, after they have been grown. We have irradiated ZnO nanowires with ions of different species and energy, achieving bending and alignment in various directions. We study the bending of single nanowires as well as the simultaneous alignment of large ensembles of ZnO nanowires in detail. Computer simulations show that the bending is initiated by ion beam induced damage. Dislocations are identified to relax stresses and make the bending and alignment permanent and resistant against annealing procedures.

  20. Permanent bending and alignment of ZnO nanowires.

    Science.gov (United States)

    Borschel, Christian; Spindler, Susann; Lerose, Damiana; Bochmann, Arne; Christiansen, Silke H; Nietzsche, Sandor; Oertel, Michael; Ronning, Carsten

    2011-05-06

    Ion beams can be used to permanently bend and re-align nanowires after growth. We have irradiated ZnO nanowires with energetic ions, achieving bending and alignment in different directions. Not only the bending of single nanowires is studied in detail, but also the simultaneous alignment of large ensembles of ZnO nanowires. Computer simulations reveal how the bending is initiated by ion beam induced damage. Detailed structural characterization identifies dislocations to relax stresses and make the bending and alignment permanent, even surviving annealing procedures.

  1. Electrochemical synthesis of CORE-shell magnetic nanowires

    KAUST Repository

    Ovejero, Jesús G.

    2015-04-16

    (Fe, Ni, CoFe) @ Au core-shell magnetic nanowires have been synthesized by optimized two-step potentiostatic electrodeposition inside self-assembled nanopores of anodic aluminium templates. The optimal electrochemical parameters (e.g., potential) have been firstly determined for the growth of continuous Au nanotubes at the inner wall of pores. Then, a magnetic core was synthesized inside the Au shells under suitable electrochemical conditions for a wide spectrum of single elements and alloy compositions (e.g., Fe, Ni and CoFe alloys). Novel opportunities offered by such nanowires are discussed particularly the magnetic behavior of (Fe, Ni, CoFe) @ Au core-shell nanowires was tested and compared with that of bare TM nanowires. These core-shell nanowires can be released from the template so, opening novel opportunities for biofunctionalization of individual nanowires.

  2. Nonlinear Conductive Behaviour of Silver Nanowires/Silicone Rubber Composites

    Science.gov (United States)

    Lu, Pin; Qu, Zhaoming; Wang, Qingguo; Bai, Liyun; Zhao, Shiyang

    2018-01-01

    Silver nanowires with an average length of 10 μm and diameter of about 90 nm have been synthesized by polyol reduction of silver nitrate in the presence of polyvinylpyrrolidone(PVP). Silver nanowires (AgNWs)/silicone rubber (SR) composites have been made by mixing silver nanowires into silicone rubber. The nonlinear response of AgNWs/SR composites under high electric field is investigated. The nonlinear Conductive behavior of composites is considered as a competitive process of several effects. From the perspective of the microstructure of composites, the conductive path is established by the quantum tunnel effect between silver nanowires. The influence factors on the conductivity of composites are discussed and analyzed. The results show that the AgNWs/SR composites with nonlinear conductive properties are of great potential application in electromagnetic protection of electron device and system.

  3. Remarkable effect of halogenation of aromatic compounds on efficiency of nanowire formation through polymerization/crosslinking by high-energy single particle irradiation

    Science.gov (United States)

    Horio, Akifumi; Sakurai, Tsuneaki; Kayama, Kazuto; Lakshmi, G. B. V. S.; Kumar Avasthi, Devesh; Sugimoto, Masaki; Yamaki, Tetsuya; Chiba, Atsuya; Saito, Yuichi; Seki, Shu

    2018-01-01

    Irradiation of high-energy ion particles on organic films induced solid-state polymerization and crosslinking reactions of the materials along the ion trajectories, resulting in the formation of insoluble uniform nanowires with a precise diameter. The nanowires were isolated by the development process i.e. the irradiated film was immersed in organic solvents, and their morphology was visualized by atomic force microscopy. The target organic materials are 4-vinyltriphenylamine, poly(4-vinyltriphenylamine), and polystyrene derivatives with/without the partial substitutions by halogen atoms. It was found that 4-vinyltriphenylamines, in spite of their small molecular sizes, afforded nanowires more clearly than poly(4-vinyltriphenylamine)s. Moreover, the efficiency of demonstrated polymerization/crosslinking reactions obviously depends on the substituted halogen atom species. The averaged diameters of nanowires from bromo- or iodo- substituted 4-vinyltriphenylamine (9.3 and 9.4 nm, respectively) were larger than that obtained from simple 4-vinyltriphenylamine (6.8 nm). The remarkable effect of halogenation of aromatic compounds on the efficiency of the radiation-induced reactions was also observed for polystyrene derivatives. This contrast was considered to originate from the sum of the efficiency of elementary reactions including dissociative electron attachment.

  4. Probing electronic interactions using electron tunneling

    Indian Academy of Sciences (India)

    pratap

    The scanning tunneling microscope: Principle d. eI. Tunneling Current. Topography by tracking current: Constant height mode. Tracking the height: Constant current mode. NbSe. 2 single crystal. (Grown by P. Shirage and A. Thamizhavel) ...

  5. Strong visible and near infrared photoluminescence from ZnO nanorods/nanowires grown on single layer graphene studied using sub-band gap excitation

    Science.gov (United States)

    Biroju, Ravi K.; Giri, P. K.

    2017-07-01

    Fabrication and optoelectronic applications of graphene based hybrid 2D-1D semiconductor nanostructures have gained tremendous research interest in recent times. Herein, we present a systematic study on the origin and evolution of strong broad band visible and near infrared (NIR) photoluminescence (PL) from vertical ZnO nanorods (NRs) and nanowires (NWs) grown on single layer graphene using both above band gap and sub-band gap optical excitations. High resolution field emission scanning electron microscopy and X-ray diffraction studies are carried out to reveal the morphology and crystalline quality of as-grown and annealed ZnO NRs/NWs on graphene. Room temperature PL studies reveal that besides the UV and visible PL bands, a new near-infrared (NIR) PL emission band appears in the range between 815 nm and 886 nm (1.40-1.52 eV). X-ray photoelectron spectroscopy studies revealed excess oxygen content and unreacted metallic Zn in the as-grown ZnO nanostructures, owing to the low temperature growth by a physical vapor deposition method. Post-growth annealing at 700 °C in the Ar gas ambient results in the enhanced intensity of both visible and NIR PL bands. On the other hand, subsequent high vacuum annealing at 700 °C results in a drastic reduction in the visible PL band and complete suppression of the NIR PL band. PL decay dynamics of green emission in Ar annealed samples show tri-exponential decay on the nanosecond timescale including a very slow decay component (time constant ˜604.5 ns). Based on these results, the NIR PL band comprising two peaks centered at ˜820 nm and ˜860 nm is tentatively assigned to neutral and negatively charged oxygen interstitial (Oi) defects in ZnO, detected experimentally for the first time. The evidence for oxygen induced trap states on the ZnO NW surface is further substantiated by the slow photocurrent response of graphene-ZnO NRs/NWs. These results are important for tunable light emission, photodetection, and other cutting edge

  6. Electronic noise of superconducting tunnel junction detectors

    International Nuclear Information System (INIS)

    Jochum, J.; Kraus, H.; Gutsche, M.; Kemmather, B.; Feilitzsch, F. v.; Moessbauer, R.L.

    1994-01-01

    The optimal signal to noise ratio for detectors based on superconducting tunnel junctions is calculated and compared for the cases of a detector consisting of one single tunnel junction, as well as of series and of parallel connections of such tunnel junctions. The influence of 1 / f noise and its dependence on the dynamical resistance of tunnel junctions is discussed quantitatively. A single tunnel junction yields the minimum equivalent noise charge. Such a tunnel junction exhibits the best signal to noise ratio if the signal charge is independent of detector size. In case, signal charge increases with detector size, a parallel or a series connection of tunnel junctions would provide the optimum signal to noise ratio. The equivalent noise charge and the respective signal to noise ratio are deduced as functions of tunnel junction parameters such as tunneling time, quasiparticle lifetime, etc. (orig.)

  7. Robust Epitaxial Al Coating of Reclined InAs Nanowires.

    Science.gov (United States)

    Kang, Jung-Hyun; Grivnin, Anna; Bor, Ella; Reiner, Jonathan; Avraham, Nurit; Ronen, Yuval; Cohen, Yonatan; Kacman, Perla; Shtrikman, Hadas; Beidenkopf, Haim

    2017-12-13

    It was recently shown that in situ epitaxial aluminum coating of indium arsenide nanowires is possible and yields superior properties relative to ex-situ evaporation of aluminum ( Nat. Mater. 2015 , 14 , 400 - 406 ). We demonstrate a robust and adaptive epitaxial growth protocol satisfying the need for producing an intimate contact between the aluminum superconductor and the indium arsenide nanowire. We show that the (001) indium arsenide substrate allows successful aluminum side-coating of reclined indium arsenide nanowires that emerge from (111)B microfacets. A robust, induced hard superconducting gap in the obtained indium arsenide/aluminum core/partial shell nanowires is clearly demonstrated. We compare epitaxial side-coating of round and hexagonal cross-section nanowires and find the surface roughness of the round nanowires to induce a more uniform aluminum profile. Consequently, the extended aluminum grains result in increased strain at the interface with the indium arsenide nanowire, which is found to induce dislocations penetrating into round nanowires only. A unique feature of proposed growth protocol is that it supports in situ epitaxial deposition of aluminum on all three arms of indium arsenide nanowire intersections in a single growth step. Such aluminum coated intersections play a key role in engineering topologically superconducting networks required for Majorana based quantum computation schemes.

  8. Crystal structure redetermination of ε-Ni.sub.3./sub.Si.sub.2./sub. from a single nanowire by dynamical refinement of precession electron diffraction data

    Czech Academy of Sciences Publication Activity Database

    Correa, Cinthia Antunes; Klementová, Mariana; Dřínek, Vladislav; Kopeček, Jaromír; Palatinus, Lukáš

    2016-01-01

    Roč. 672, Jul (2016), s. 505-509 ISSN 0925-8388 R&D Projects: GA ČR GA13-25747S Institutional support: RVO:68378271 ; RVO:67985858 Keywords : precession electron diffraction tomography * structure determination * nanowire * dynamical refinement Subject RIV: BM - Solid Matter Physics ; Magnetism; CA - Inorganic Chemistry (UCHP-M) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Inorganic and nuclear chemistry (UCHP-M) Impact factor: 3.133, year: 2016

  9. Boron carbide nanowires: Synthesis and characterization

    Science.gov (United States)

    Guan, Zhe

    Bulk boron carbide has been widely used in ballistic armored vest and the property characterization has been heavily focused on mechanical properties. Even though boron carbides have also been projected as a promising class of high temperature thermoelectric materials for energy harvesting, the research has been limited in this field. Since the thermal conductivity of bulk boron carbide is still relatively high, there is a great opportunity to take advantage of the nano effect to further reduce it for better thermoelectric performance. This dissertation work aims to explore whether improved thermoelectric performance can be found in boron carbide nanowires compared with their bulk counterparts. This dissertation work consists of four main parts. (1) Synthesis of boron carbide nanowires. Boron carbide nanowires were synthesized by co-pyrolysis of diborane and methane at low temperatures (with 879 °C as the lowest) in a home-built low pressure chemical vapor deposition (LPCVD) system. The CVD-based method is energy efficient and cost effective. The as-synthesized nanowires were characterized by electron microscopy extensively. The transmission electron microscopy (TEM) results show the nanowires are single crystalline with planar defects. Depending on the geometrical relationship between the preferred growth direction of the nanowire and the orientation of the defects, the as-synthesized nanowires could be further divided into two categories: transverse fault (TF) nanowires grow normal to the defect plane, while axial fault (AF) ones grow within the defect plane. (2) Understanding the growth mechanism of as-synthesized boron carbide nanowires. The growth mechanism can be generally considered as the famous vapor-liquid-solid (VLS) mechanism. TF and AF nanowires were found to be guided by Ni-B catalysts of two phases. A TF nanowire is lead by a hexagonal phase catalyst, which was proved to be in a liquid state during reaction. While an AF nanowires is catalyzed by a

  10. Advances in nanowire bioelectronics

    Science.gov (United States)

    Zhou, Wei; Dai, Xiaochuan; Lieber, Charles M.

    2017-01-01

    Semiconductor nanowires represent powerful building blocks for next generation bioelectronics given their attractive properties, including nanometer-scale footprint comparable to subcellular structures and bio-molecules, configurable in nonstandard device geometries readily interfaced with biological systems, high surface-to-volume ratios, fast signal responses, and minimum consumption of energy. In this review article, we summarize recent progress in the field of nanowire bioelectronics with a focus primarily on silicon nanowire field-effect transistor biosensors. First, the synthesis and assembly of semiconductor nanowires will be described, including the basics of nanowire FETs crucial to their configuration as biosensors. Second, we will introduce and review recent results in nanowire bioelectronics for biomedical applications ranging from label-free sensing of biomolecules, to extracellular and intracellular electrophysiological recording.

  11. From nanodiamond to nanowires.

    Energy Technology Data Exchange (ETDEWEB)

    Barnard, A.; Materials Science Division

    2005-01-01

    Recent advances in the fabrication and characterization of semiconductor and metallic nanowires are proving very successful in meeting the high expectations of nanotechnologists. Although the nanoscience surrounding sp{sup 3} bonded carbon nanotubes has continued to flourish over recent years the successful synthesis of the sp{sup 3} analogue, diamond nanowires, has been limited. This prompts questions as to whether diamond nanowires are fundamentally unstable. By applying knowledge obtained from examining the structural transformations in nanodiamond, a framework for analyzing the structure and stability of diamond nanowires may be established. One possible framework will be discussed here, supported by results of ab initio density functional theory calculations used to study the structural relaxation of nanodiamond and diamond nanowires. The results show that the structural stability and electronic properties of diamond nanowires are dependent on the surface morphology, crystallographic direction of the principal axis, and the degree of surface hydrogenation.

  12. Correlation of tunnel widening and tunnel positioning with short-term functional outcomes in single-bundle anterior cruciate ligament reconstruction using patellar tendon versus hamstring graft: a prospective study.

    Science.gov (United States)

    Biswal, Udit Kumar; Balaji, Gopisankar; Nema, Sandeep; Poduval, Murali; Menon, Jagdish; Patro, Dilip Kumar

    2016-08-01

    To study the correlation between tunnel widening and tunnel position with short-term functional outcomes post-ACL reconstruction with patellar tendon and hamstring autografts in young adults. A total of 33 patients who underwent ACL reconstruction between October 2013 and February 2015 were included and followed up for 6 months. A standardized surgical technique was used for each graft type. Intra-op arthroscopy findings and drilled tunnel diameters were noted. They were followed up for 3 and 6 months. Radiological assessment was done at 3 and 6 months with clinical score assessment at 6 months. At 6 months, clinical scores were comparable in both groups. Tunnel widening in both femoral and tibial tunnel at 3 and 6 months were significantly higher in STG group (p values <0.05). The rate of widening was higher in 0-3 months and reduced in 3-6 months. There was statistically significant negative correlation between femoral tunnel widening by CT and IKDC score at 6 months (p value 0.049). We found a positive correlation between posterior positioning of femoral tunnel and Lysholm and IKDC scores. The correlation with Lysholm scores was statistically significant (p value 0.046). To conclude, tunnel widening is more with hamstrings graft. Femoral tunnel widening has significant negative correlation with that of IKDC scores at 6 months. Posterior femoral tunnel positioning and Lysholm scores at 6 months had significant correlation.

  13. Remote N2 plasma treatment to deposit ultrathin high-k dielectric as tunneling contact layer for single-layer MoS2 MOSFET

    Science.gov (United States)

    Qian, Qingkai; Zhang, Zhaofu; Hua, Mengyuan; Wei, Jin; Lei, Jiacheng; Chen, Kevin J.

    2017-12-01

    Remote N2 plasma treatment is explored as a surface functionalization technique to deposit ultrathin high-k dielectric on single-layer MoS2. The ultrathin dielectric is used as a tunneling contact layer, which also serves as an interfacial layer below the gate region for fabricating top-gate MoS2 metal–oxide–semiconductor field-effect transistors (MOSFETs). The fabricated devices exhibited small hysteresis and mobility as high as 14 cm2·V‑1·s‑1. The contact resistance was significantly reduced, which resulted in the increase of drain current from 20 to 56 µA/µm. The contact resistance reduction can be attributed to the alleviated metal–MoS2 interface reaction and the preserved conductivity of MoS2 below the source/drain metal contact.

  14. Model of Fabry-Pérot-type electromagnetic modes of a cylindrical nanowire

    DEFF Research Database (Denmark)

    Bordo, Vladimir

    2010-01-01

    The rigorous theory of normal electromagnetic modes of a cylindrical nanowire of finite length is developed. The exact integral equation which determines the solution of Maxwell's equations obeying the boundary conditions at the whole nanowire surface is derived. The nanowire normal (Fabry......-Pérot) modes are defined as non-trivial solutions of the source-free equation. The approach is considered in more detail for elongated nanowires whose length is much larger than their diameter. The resonance condition obtained for a single-mode nanowire resembles the formula for the Fabry-Pérot resonator...

  15. Hard gap in epitaxial semiconductor-superconductor nanowires

    DEFF Research Database (Denmark)

    Chang, W.; Albrecht, S. M.; Jespersen, T. S.

    2015-01-01

    information processing. Proposals in this direction based on proximity effect in semiconductor nanowires are appealing because the key ingredients are currently in hand. However, previous instances of proximitized semiconductors show significant tunneling conductance below the superconducting gap, suggesting...... a continuum of subgap states---a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by proximity effect in a semiconductor, using epitaxial Al-InAs superconductor-semiconductor nanowires. The hard gap, along with favorable material properties and gate......-tunability, makes this new hybrid system attractive for a number of applications, as well as fundamental studies of mesoscopic superconductivity....

  16. Thermoelectric properties of semiconductor nanowire networks

    Science.gov (United States)

    Roslyak, Oleksiy; Piryatinski, Andrei

    2016-03-01

    To examine the thermoelectric (TE) properties of a semiconductor nanowire (NW) network, we propose a theoretical approach mapping the TE network on a two-port network. In contrast to a conventional single-port (i.e., resistor) network model, our model allows for large scale calculations showing convergence of TE figure of merit, ZT, with an increasing number of junctions. Using this model, numerical simulations are performed for the Bi2Te3 branched nanowire (BNW) and Cayley tree NW (CTNW) network. We find that the phonon scattering at the network junctions plays a dominant role in enhancing the network ZT. Specifically, disordered BNW and CTNW demonstrate an order of magnitude higher ZT enhancement compared to their ordered counterparts. Formation of preferential TE pathways in CTNW makes the network effectively behave as its BNW counterpart. We provide formalism for simulating large scale nanowire networks hinged upon experimentally measurable TE parameters of a single T-junction.

  17. Unlocking the Origin of Superior Performance of a Si-Ge Core-Shell Nanowire Quantum Dot Field Effect Transistor.

    Science.gov (United States)

    Dhungana, Kamal B; Jaishi, Meghnath; Pati, Ranjit

    2016-07-13

    The sustained advancement in semiconducting core-shell nanowire technology has unlocked a tantalizing route for making next generation field effect transistor (FET). Understanding how to control carrier mobility of these nanowire channels by applying a gate field is the key to developing a high performance FET. Herein, we have identified the switching mechanism responsible for the superior performance of a Si-Ge core-shell nanowire quantum dot FET over its homogeneous Si counterpart. A quantum transport approach is used to investigate the gate-field modulated switching behavior in electronic current for ultranarrow Si and Si-Ge core-shell nanowire quantum dot FETs. Our calculations reveal that for the ON state, the gate-field induced transverse localization of the wave function restricts the carrier transport to the outer (shell) layer with the pz orbitals providing the pathway for tunneling of electrons in the channels. The higher ON state current in the Si-Ge core-shell nanowire FET is attributed to the pz orbitals that are distributed over the entire channel; in the case of Si nanowire, the participating pz orbital is restricted to a few Si atoms in the channel resulting in a smaller tunneling current. Within the gate bias range considered here, the transconductance is found to be substantially higher in the case of a Si-Ge core-shell nanowire FET than in a Si nanowire FET, which suggests a much higher mobility in the Si-Ge nanowire device.

  18. Rare earth silicide nanowires on silicon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wanke, Martina

    2008-11-10

    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti {gamma} point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi{sub 2}-monolayer and the Dy{sub 3}Si{sub 5}-multilayer on the Si(111) surface are investigated in comparison to the known ErSi{sub 2}/Si(111) and Er{sub 3}Si{sub 5}/Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the (vector)k {sub parallel} space is elliptical at the anti M points, while the hole pocket at the anti {gamma} point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas

  19. Nanofabrication of structures for the study of nanowire doping

    Science.gov (United States)

    Eichfeld, Chad

    characterized by electron microscopy and found to be single crystal and to grow oriented to the growth substrate. 4-pt electrical resistivity measurements of the silicon nanowires were made. The resistivity measured ranged from of 0.005-0.017 O-cm, corresponding to an impurity concentration 7 x 1018 to 2 x 1019 cm-3 assuming bulk mobility. Calculations show that possible error from depletion at the surface has only a small effect on the calculated resistivity for a 100 nm diameter nanowire at this high of a doping concentration. The results of LEAP metrology analysis of the Al catalyzed nanowires show an estimated Al concentration of 0.4 atomic percent or 2 x 1020 cm-3 about 200 nm from the nanowire tip, where the concentration appears to have leveled out. This value is higher than would be expected from the solubility published for Al.

  20. Nanowire Electrodes for Advanced Lithium Batteries

    International Nuclear Information System (INIS)

    Huang, Lei; Wei, Qiulong; Sun, Ruimin; Mai, Liqiang

    2014-01-01

    Since the commercialization of lithium ion batteries (LIBs) in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism need to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate that the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reaction limit the cycling performance of LIBs. Based on the in situ observations, some feasible optimization strategies, including prelithiation, coaxial structure, nanowire arrays, and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some “beyond Li-ion” batteries, such as Li-S and Li-air batteries are also described.