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Sample records for single nanowire tunnel

  1. High-Performance Single Nanowire Tunnel Diodes

    DEFF Research Database (Denmark)

    Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

    2010-01-01

    We demonstrate single nanowire tunnel diodes with room temperature peak current densities of up to 329 A/cm(2). Despite the large surface to volume ratio of the type-II InP-GaAs axial heterostructure nanowires, we measure peak to valley current ratios (PVCR) of up to 8.2 at room temperature and 27...

  2. Single-electron tunneling in InP nanowires

    NARCIS (Netherlands)

    Franceschi, De S.; Dam, Van J.A.; Bakkers, E.P.A.M.; Feiner, L.F.; Gurevich, L.; Kouwenhoven, L.P.

    2003-01-01

    A study was performed on single-electron tunneling in InP nanowires. The contact resistances as low as ~10 k¿, with minor temperature dependence were obtained. The Coulomb-blockade behavior was shown with single-electron charging energies of ~1 meV.

  3. High Performance Single Nanowire Tunnel Diodes

    DEFF Research Database (Denmark)

    Wallentin, Jesper; Persson, Johan Mikael; Wagner, Jakob Birkedal

    NWs were contacted in a NW-FET setup. Electrical measurements at room temperature display typical tunnel diode behavior, with a Peak-to-Valley Current Ratio (PVCR) as high as 8.2 and a peak current density as high as 329 A/cm2. Low temperature measurements show improved PVCR of up to 27.6....... is the tunnel (Esaki) diode, which provides a low-resistance connection between junctions. We demonstrate an InP-GaAs NW axial heterostructure with tunnel diode behavior. InP and GaAs can be readily n- and p-doped, respectively, and the heterointerface is expected to have an advantageous type II band alignment...

  4. Electroluminescence from single nanowires by tunnel injection: an experimental study

    International Nuclear Information System (INIS)

    Zimmler, Mariano A; Bao Jiming; Shalish, Ilan; Yi, Wei; Yoon, Joonah; Narayanamurti, Venkatesh; Capasso, Federico

    2007-01-01

    We present a hybrid light-emitting diode structure composed of an n-type gallium nitride nanowire on a p-type silicon substrate in which current is injected along the length of the nanowire. The device emits ultraviolet light under both bias polarities. Tunnel injection of holes from the p-type substrate (under forward bias) and from the metal (under reverse bias) through thin native oxide barriers consistently explains the observed electroluminescence behaviour. This work shows that the standard p-n junction model is generally not applicable to this kind of device structure

  5. Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

    Energy Technology Data Exchange (ETDEWEB)

    Llobet, Jordi; Pérez-Murano, Francesc, E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Institut de Microelectrònica de Barcelona (IMB-CNM CSIC), Campus UAB, E-08193 Bellaterra, Catalonia (Spain); Krali, Emiljana; Wang, Chen; Jones, Mervyn E.; Durrani, Zahid A. K., E-mail: francesc.perez@csic.es, E-mail: z.durrani@imperial.ac.uk [Department of Electrical and Electronic Engineering, Imperial College London, South Kensington, London SW7 2AZ (United Kingdom); Arbiol, Jordi [Institució Catalana de Recerca i Estudis Avançats (ICREA) and Institut Català de Nanociència i Nanotecnologia (ICN2), Campus UAB, 08193 Bellaterra, Catalonia (Spain); CELLS-ALBA Synchrotron Light Facility, 08290 Cerdanyola, Catalonia (Spain)

    2015-11-30

    Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.

  6. Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

    International Nuclear Information System (INIS)

    Llobet, Jordi; Pérez-Murano, Francesc; Krali, Emiljana; Wang, Chen; Jones, Mervyn E.; Durrani, Zahid A. K.; Arbiol, Jordi

    2015-01-01

    Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal. Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations

  7. Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions

    Directory of Open Access Journals (Sweden)

    Keyvan Narimani

    2018-04-01

    Full Text Available In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET with gate-all-around (GAA structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages. The subthreshold swing (SS at room temperature shows an average of 76 mV/dec over 4 orders of drain current Id from 5 × 10−6 to 5 × 10−2 µA/µm Optimized devices also show excellent current saturation, an important feature for analog performance.

  8. Tunneling and Transport in Nanowires

    International Nuclear Information System (INIS)

    Goldman, Allen M.

    2016-01-01

    The goal of this program was to study new physical phenomena that might be relevant to the performance of conductive devices and circuits of the smallest realizable feature sizes possible using physical rather than biological techniques. Although the initial scientific work supported involved the use of scanning tunneling microscopy and spectroscopy to ascertain the statistics of the energy level distribution of randomly sized and randomly shaped quantum dots, or nano-crystals, the main focus was on the investigation of selected properties, including superconductivity, of conducting and superconducting nanowires prepared using electron-beam-lithography. We discovered a magnetic-field-restoration of superconductivity in out-of-equilibrium nanowires driven resistive by current. This phenomenon was explained by the existence of a state in which dissipation coexisted with nonvanishing superconducting order. We also produced ultra-small superconducting loops to study a predicted anomalous fluxoid quantization, but instead, found a magnetic-field-dependent, high-resistance state, rather than superconductivity. Finally, we developed a simple and controllable nanowire in an induced charged layer near the surface of a masked single-crystal insulator, SrTiO_3. The layer was induced using an electric double layer transistor employing an ionic liquid (IL). The transport properties of the induced nanowire resembled those of collective electronic transport through an array of quantum dots.

  9. Tunneling and Transport in Nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Goldman, Allen M. [Univ. of Minnesota, Minneapolis, MN (United States)

    2016-08-16

    The goal of this program was to study new physical phenomena that might be relevant to the performance of conductive devices and circuits of the smallest realizable feature sizes possible using physical rather than biological techniques. Although the initial scientific work supported involved the use of scanning tunneling microscopy and spectroscopy to ascertain the statistics of the energy level distribution of randomly sized and randomly shaped quantum dots, or nano-crystals, the main focus was on the investigation of selected properties, including superconductivity, of conducting and superconducting nanowires prepared using electron-beam-lithography. We discovered a magnetic-field-restoration of superconductivity in out-of-equilibrium nanowires driven resistive by current. This phenomenon was explained by the existence of a state in which dissipation coexisted with nonvanishing superconducting order. We also produced ultra-small superconducting loops to study a predicted anomalous fluxoid quantization, but instead, found a magnetic-field-dependent, high-resistance state, rather than superconductivity. Finally, we developed a simple and controllable nanowire in an induced charged layer near the surface of a masked single-crystal insulator, SrTiO3. The layer was induced using an electric double layer transistor employing an ionic liquid (IL). The transport properties of the induced nanowire resembled those of collective electronic transport through an array of quantum dots.

  10. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2016-11-09

    We investigate the tunneling magnetoresistance of small diameter semiconducting Si nanowires attached to ferromagnetic Fe electrodes, using first principles density functional theory combined with the non-equilibrium Green\\'s functions method for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we systematically study the spin transport properties for neutral nanowires and both n and p doping conditions. We find a substantial low bias magnetoresistance for the neutral case, which halves for an applied voltage of about 0.35 V and persists up to 1 V. Doping in general decreases the magnetoresistance, as soon as the conductance is no longer dominated by tunneling.

  11. Structural and tunneling properties of Si nanowires

    KAUST Repository

    Montes Muñoz, Enrique

    2013-12-06

    We investigate the electronic structure and electron transport properties of Si nanowires attached to Au electrodes from first principles using density functional theory and the nonequilibrium Green\\'s function method. We systematically study the dependence of the transport properties on the diameter of the nanowires, on the growth direction, and on the length. At the equilibrium Au-nanowire distance we find strong electronic coupling between the electrodes and nanowires, which results in a low contact resistance. With increasing nanowire length we study the transition from metallic to tunneling conductance for small applied bias. For the tunneling regime we investigate the decay of the conductance with the nanowire length and rationalize the results using the complex band structure of the pristine nanowires. The conductance is found to depend strongly on the growth direction, with nanowires grown along the ⟨110⟩ direction showing the smallest decay with length and the largest conductance and current.

  12. Structural and tunneling properties of Si nanowires

    KAUST Repository

    Montes Muñ oz, Enrique; Gkionis, Konstantinos; Rungger, Ivan; Sanvito, Stefano; Schwingenschlö gl, Udo

    2013-01-01

    We investigate the electronic structure and electron transport properties of Si nanowires attached to Au electrodes from first principles using density functional theory and the nonequilibrium Green's function method. We systematically study the dependence of the transport properties on the diameter of the nanowires, on the growth direction, and on the length. At the equilibrium Au-nanowire distance we find strong electronic coupling between the electrodes and nanowires, which results in a low contact resistance. With increasing nanowire length we study the transition from metallic to tunneling conductance for small applied bias. For the tunneling regime we investigate the decay of the conductance with the nanowire length and rationalize the results using the complex band structure of the pristine nanowires. The conductance is found to depend strongly on the growth direction, with nanowires grown along the ⟨110⟩ direction showing the smallest decay with length and the largest conductance and current.

  13. Tunneling magnetoresistance in Si nanowires

    KAUST Repository

    Montes Muñ oz, Enrique; Rungger, I.; Sanvito, S.; Schwingenschlö gl, Udo

    2016-01-01

    for quantum transport. Silicon nanowires represent an interesting platform for spin devices. They are compatible with mature silicon technology and their intrinsic electronic properties can be controlled by modifying the diameter and length. Here we

  14. Single Electron Tunneling

    International Nuclear Information System (INIS)

    Ruggiero, Steven T.

    2005-01-01

    Financial support for this project has led to advances in the science of single-electron phenomena. Our group reported the first observation of the so-called ''Coulomb Staircase'', which was produced by tunneling into ultra-small metal particles. This work showed well-defined tunneling voltage steps of width e/C and height e/RC, demonstrating tunneling quantized on the single-electron level. This work was published in a now well-cited Physical Review Letter. Single-electron physics is now a major sub-field of condensed-matter physics, and fundamental work in the area continues to be conducted by tunneling in ultra-small metal particles. In addition, there are now single-electron transistors that add a controlling gate to modulate the charge on ultra-small photolithographically defined capacitive elements. Single-electron transistors are now at the heart of at least one experimental quantum-computer element, and single-electron transistor pumps may soon be used to define fundamental quantities such as the farad (capacitance) and the ampere (current). Novel computer technology based on single-electron quantum dots is also being developed. In related work, our group played the leading role in the explanation of experimental results observed during the initial phases of tunneling experiments with the high-temperature superconductors. When so-called ''multiple-gap'' tunneling was reported, the phenomenon was correctly identified by our group as single-electron tunneling in small grains in the material. The main focus throughout this project has been to explore single electron phenomena both in traditional tunneling formats of the type metal/insulator/particles/insulator/metal and using scanning tunneling microscopy to probe few-particle systems. This has been done under varying conditions of temperature, applied magnetic field, and with different materials systems. These have included metals, semi-metals, and superconductors. Amongst a number of results, we have

  15. Suppression of tunneling leakage current in junctionless nanowire transistors

    International Nuclear Information System (INIS)

    Lou, Haijun; Li, Dan; Dong, Yan; Lin, Xinnan; He, Jin; Yang, Shengqi; Chan, Mansun

    2013-01-01

    In this paper, the characteristics of tunneling leakage current for the dual-material gate junctionless nanowire transistor (DMG-JNT) are investigated by three-dimensional numerical simulations and compared with conventional junctionless nanowire transistor (JNT). The suppression of the tunneling leakage current on the JNT by introducing an energy band step with the DMG structure is verified and presented for the first time. The effects of channel length on the DMG-JNT and the JNT are also studied. Results showed that the tunneling leakage current of the DMG-JNT is two orders smaller than that of the JNT, and further, the DMG-JNT exhibits superior scaling capability. Two key design parameters of the DMG-JNT, control gate ratio (Ra) and work function difference (δW), have been optimized and the optimal ranges of Ra and δW are pointed out. (paper)

  16. Suppression of tunneling leakage current in junctionless nanowire transistors

    Science.gov (United States)

    Lou, Haijun; Li, Dan; Dong, Yan; Lin, Xinnan; He, Jin; Yang, Shengqi; Chan, Mansun

    2013-12-01

    In this paper, the characteristics of tunneling leakage current for the dual-material gate junctionless nanowire transistor (DMG-JNT) are investigated by three-dimensional numerical simulations and compared with conventional junctionless nanowire transistor (JNT). The suppression of the tunneling leakage current on the JNT by introducing an energy band step with the DMG structure is verified and presented for the first time. The effects of channel length on the DMG-JNT and the JNT are also studied. Results showed that the tunneling leakage current of the DMG-JNT is two orders smaller than that of the JNT, and further, the DMG-JNT exhibits superior scaling capability. Two key design parameters of the DMG-JNT, control gate ratio (Ra) and work function difference (δW), have been optimized and the optimal ranges of Ra and δW are pointed out.

  17. Single-contact tunneling thermometry

    Science.gov (United States)

    Maksymovych, Petro

    2016-02-23

    A single-contact tunneling thermometry circuit includes a tunnel junction formed between two objects. Junction temperature gradient information is determined based on a mathematical relationship between a target alternating voltage applied across the junction and the junction temperature gradient. Total voltage measured across the junction indicates the magnitude of the target alternating voltage. A thermal gradient is induced across the junction. A reference thermovoltage is measured when zero alternating voltage is applied across the junction. An increasing alternating voltage is applied while measuring a thermovoltage component and a DC rectification voltage component created by the applied alternating voltage. The target alternating voltage is reached when the thermovoltage is nullified or doubled by the DC rectification voltage depending on the sign of the reference thermovoltage. Thermoelectric current and current measurements may be utilized in place of the thermovoltage and voltage measurements. The system may be automated with a feedback loop.

  18. Axial Ge/Si nanowire heterostructure tunnel FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Sanuel T [Los Alamos National Laboratory; Daych, Shadi A [Los Alamos National Laboratory

    2010-01-01

    The vapor-liquid-solid (VLS) growth of semiconductor nanowires allows doping and composition modulation along their axis and the realization of axial 1 D heterostructures. This provides additional flexibility in energy band-edge engineering along the transport direction which is difficult to attain by planar materials growth and processing techniques. We report here on the design, growth, fabrication, and characterization of asymmetric heterostructure tunnel field-effect transistors (HTFETs) based on 100% compositionally modulated Si/Ge axial NWs for high on-current operation and low ambipolar transport behavior. We discuss the optimization of band-offsets and Schottky barrier heights for high performance HTFETs and issues surrounding their experimental realization. Our HTFET devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a measured current drive exceeding 100 {mu}A/{mu}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios.

  19. Controlled growth of single nanowires within a supported alumina template

    DEFF Research Database (Denmark)

    Vlad, A.; Mátéfi-Tempfli, M.; Faniel, S.

    2006-01-01

    A simple technique for fabricating single nanowires with well-defined position is presented. The process implies the use of a silicon nitride mask for selective electrochemical growth of the nanowires in a porous alumina template. We show that this method allows the realization of complex nanowire...

  20. Synthesis, fabrication and characterization of Ge/Si axial nanowire heterostructure tunnel FETs

    Energy Technology Data Exchange (ETDEWEB)

    Picraux, Samuel T [Los Alamos National Laboratory; Dayeh, Shadi A [Los Alamos National Laboratory

    2010-01-01

    Axial Ge/Si heterostructure nanowires allow energy band-edge engineering along the axis of the nanowire, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two advances in the area of heterostructure nanowires and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure nanowires with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these nanowires for high-on currents and suppressed ambipolar behavior. Initial prototype devices resulted in a current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. These results demonstrate the potential of such asymmetric heterostructures (both in the semiconductor channel and metal-semiconductor barrier heights) for low-power and high performance electronics.

  1. Single Nanowire Probe for Single Cell Endoscopy and Sensing

    Science.gov (United States)

    Yan, Ruoxue

    The ability to manipulate light in subwavelength photonic and plasmonic structures has shown great potentials in revolutionizing how information is generated, transformed and processed. Chemically synthesized nanowires, in particular, offers a unique toolbox not only for highly compact and integrated photonic modules and devices, including coherent and incoherent light sources, waveguides, photodetectors and photovoltaics, but also for new types of nanoscopic bio-probes for spot cargo delivery and in-situ single cell endoscopy and sensing. Such nanowire probes would enable us to carry out intracellular imaging and probing with high spatial resolution, monitor in-vivo biological processes within single living cells and greatly improve our fundamental understanding of cell functions, intracellular physiological processes, and cellular signal pathways. My work is aimed at developing a material and instrumental platform for such single nanowire probe. Successful optical integration of Ag nanowire plasmonic waveguides, which offers deep subwavelength mode confinement, and conventional photonic waveguides was demonstrated on a single nanowire level. The highest plasmonic-photonic coupling efficiency coupling was found at small coupling angles and low input frequencies. The frequency dependent propagation loss was observed in Ag nanowire and was confirmed by quantitative measurement and in agreement with theoretical expectations. Rational integration of dielectric and Ag nanowire waveguide components into hybrid optical-plasmonic routing devices has been demonstrated. This capability is essential for incorporating sub-100nm Ag nanowire waveguides into optical fiber based nanoprobes for single cell endoscopy. The nanoprobe system based on single nanowire waveguides was demonstrated by optically coupling semiconductor or metal nanowire with an optical fiber with tapered tip. This nanoprobe design requires minimal instrumentation which makes it cost efficient and readily

  2. Current–Voltage Characterization of Individual As-Grown Nanowires Using a Scanning Tunneling Microscope

    Science.gov (United States)

    2013-01-01

    Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current–voltage properties. We report accurate on-top imaging and I–V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I–V properties with a very small spread in measured values compared to standard techniques. PMID:24059470

  3. Current-voltage characterization of individual as-grown nanowires using a scanning tunneling microscope.

    Science.gov (United States)

    Timm, Rainer; Persson, Olof; Engberg, David L J; Fian, Alexander; Webb, James L; Wallentin, Jesper; Jönsson, Andreas; Borgström, Magnus T; Samuelson, Lars; Mikkelsen, Anders

    2013-11-13

    Utilizing semiconductor nanowires for (opto)electronics requires exact knowledge of their current-voltage properties. We report accurate on-top imaging and I-V characterization of individual as-grown nanowires, using a subnanometer resolution scanning tunneling microscope with no need for additional microscopy tools, thus allowing versatile application. We form Ohmic contacts to InP and InAs nanowires without any sample processing, followed by quantitative measurements of diameter dependent I-V properties with a very small spread in measured values compared to standard techniques.

  4. Axial Ge/Si nanowire heterostructure tunnel FETs.

    Energy Technology Data Exchange (ETDEWEB)

    Dayeh, Shadi A. (Los Alamos National Laboratory); Gin, Aaron V.; Huang, Jian Yu; Picraux, Samuel Thomas (Los Alamos National Laboratory)

    2010-03-01

    Axial Ge/Si heterostructure nanowires (NWs) allow energy band-edge engineering along the axis of the NW, which is the charge transport direction, and the realization of asymmetric devices for novel device architectures. This work reports on two significant advances in the area of heterostructure NWs and tunnel FETs: (i) the realization of 100% compositionally modulated Si/Ge axial heterostructure NWs with lengths suitable for device fabrication and (ii) the design and implementation of Schottky barrier tunnel FETs on these NWs for high-on currents and suppressed ambipolar behavior. Initial prototype devices with 10 nm PECVD SiN{sub x} gate dielectric resulted in a very high current drive in excess of 100 {micro}A/{micro}m (I/{pi}D) and 10{sup 5} I{sub on}/I{sub off} ratios. Prior work on the synthesis of Ge/Si axial NW heterostructures through the VLS mechanism have resulted in axial Si/Si{sub 1-x}Ge{sub x} NW heterostructures with x{sub max} {approx} 0.3, and more recently 100% composition modulation was achieved with a solid growth catalyst. In this latter case, the thickness of the heterostructure cannot exceed few atomic layers due to the slow axial growth rate and concurrent radial deposition on the NW sidewalls leading to a mixture of axial and radial deposition, which imposes a big challenge for fabricating useful devices form these NWs in the near future. Here, we report the VLS growth of 100% doping and composition modulated axial Ge/Si heterostructure NWs with lengths appropriate for device fabrication by devising a growth procedure that eliminates Au diffusion on the NW sidewalls and minimizes random kinking in the heterostructure NWs as deduced from detailed microscopy analysis. Fig. 1 a shows a cross-sectional SEM image of epitaxial Ge/Si axial NW heterostructures grown on a Ge(111) surface. The interface abruptness in these Ge/Si heterostructure NWs is of the order of the NW diameter. Some of these NWs develop a crystallographic kink that is {approx

  5. Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements.

    Science.gov (United States)

    Otnes, Gaute; Barrigón, Enrique; Sundvall, Christian; Svensson, K Erik; Heurlin, Magnus; Siefer, Gerald; Samuelson, Lars; Åberg, Ingvar; Borgström, Magnus T

    2018-05-09

    III-V solar cells in the nanowire geometry might hold significant synthesis-cost and device-design advantages as compared to thin films and have shown impressive performance improvements in recent years. To continue this development there is a need for characterization techniques giving quick and reliable feedback for growth development. Further, characterization techniques which can improve understanding of the link between nanowire growth conditions, subsequent processing, and solar cell performance are desired. Here, we present the use of a nanoprobe system inside a scanning electron microscope to efficiently contact single nanowires and characterize them in terms of key parameters for solar cell performance. Specifically, we study single as-grown InP nanowires and use electron beam induced current characterization to understand the charge carrier collection properties, and dark current-voltage characteristics to understand the diode recombination characteristics. By correlating the single nanowire measurements to performance of fully processed nanowire array solar cells, we identify how the performance limiting parameters are related to growth and/or processing conditions. We use this understanding to achieve a more than 7-fold improvement in efficiency of our InP nanowire solar cells, grown from a different seed particle pattern than previously reported from our group. The best cell shows a certified efficiency of 15.0%; the highest reported value for a bottom-up synthesized InP nanowire solar cell. We believe the presented approach have significant potential to speed-up the development of nanowire solar cells, as well as other nanowire-based electronic/optoelectronic devices.

  6. ON current enhancement of nanowire Schottky barrier tunnel field effect transistors

    Science.gov (United States)

    Takei, Kohei; Hashimoto, Shuichiro; Sun, Jing; Zhang, Xu; Asada, Shuhei; Xu, Taiyu; Matsukawa, Takashi; Masahara, Meishoku; Watanabe, Takanobu

    2016-04-01

    Silicon nanowire Schottky barrier tunnel field effect transistors (NW-SBTFETs) are promising structures for high performance devices. In this study, we fabricated NW-SBTFETs to investigate the effect of nanowire structure on the device characteristics. The NW-SBTFETs were operated with a backgate bias, and the experimental results demonstrate that the ON current density is enhanced by narrowing the width of the nanowire. We confirmed using the Fowler-Nordheim plot that the drain current in the ON state mainly comprises the quantum tunneling component through the Schottky barrier. Comparison with a technology computer aided design (TCAD) simulation revealed that the enhancement is attributed to the electric field concentration at the corners of cross-section of the NW. The study findings suggest an effective approach to securing the ON current by Schottky barrier width modulation.

  7. Modeling and Development of Superconducting Nanowire Single Photon Detectors

    Data.gov (United States)

    National Aeronautics and Space Administration — This proposal outlines a research project as the central component of a Ph.D. program focused on the device physics of superconducting nanowire single photon...

  8. Tunneling spin injection into single layer graphene.

    Science.gov (United States)

    Han, Wei; Pi, K; McCreary, K M; Li, Yan; Wong, Jared J I; Swartz, A G; Kawakami, R K

    2010-10-15

    We achieve tunneling spin injection from Co into single layer graphene (SLG) using TiO₂ seeded MgO barriers. A nonlocal magnetoresistance (ΔR(NL)) of 130  Ω is observed at room temperature, which is the largest value observed in any material. Investigating ΔR(NL) vs SLG conductivity from the transparent to the tunneling contact regimes demonstrates the contrasting behaviors predicted by the drift-diffusion theory of spin transport. Furthermore, tunnel barriers reduce the contact-induced spin relaxation and are therefore important for future investigations of spin relaxation in graphene.

  9. Customization of Protein Single Nanowires for Optical Biosensing.

    Science.gov (United States)

    Sun, Yun-Lu; Sun, Si-Ming; Wang, Pan; Dong, Wen-Fei; Zhang, Lei; Xu, Bin-Bin; Chen, Qi-Dai; Tong, Li-Min; Sun, Hong-Bo

    2015-06-24

    An all-protein single-nanowire optical biosensor is constructed by a facile and general femtosecond laser direct writing approach with nanoscale structural customization. As-formed protein single nanowires show excellent optical properties (fine waveguiding performance and bio-applicable transmission windows), and are utilized as evanescent optical nanobiosensors for label-free biotin detection. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  10. An analytic model for gate-all-around silicon nanowire tunneling field effect transistors

    International Nuclear Information System (INIS)

    Liu Ying; He Jin; Chan Mansun; Ye Yun; Zhao Wei; Wu Wen; Deng Wan-Ling; Wang Wen-Ping; Du Cai-Xia

    2014-01-01

    An analytical model of gate-all-around (GAA) silicon nanowire tunneling field effect transistors (NW-TFETs) is developted based on the surface potential solutions in the channel direction and considering the band to band tunneling (BTBT) efficiency. The three-dimensional Poisson equation is solved to obtain the surface potential distributions in the partition regions along the channel direction for the NW-TFET, and a tunneling current model using Kane's expression is developed. The validity of the developed model is shown by the good agreement between the model predictions and the TCAD simulation results. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

  11. Synthesis of uniform CdS nanowires in high yield and its single nanowire electrical property

    International Nuclear Information System (INIS)

    Yan Shancheng; Sun Litao; Qu Peng; Huang Ninping; Song Yinchen; Xiao Zhongdang

    2009-01-01

    Large-scale high quality CdS nanowires with uniform diameter were synthesized by using a rapid and simple solvothermal route. Field emission scan electron microscopy (FESEM) and transmission electron microscopy (TEM) images show that the CdS nanowires have diameter of about 26 nm and length up to several micrometres. High resolution TEM (HRTEM) study indicates the single-crystalline nature of CdS nanowires with an oriented growth along the c-axis direction. The optical properties of the products were characterized by UV-vis absorption spectra, photoluminescence spectra and Raman spectra. The resistivity, electron concentration and electron mobility of single NW are calculated by fitting the symmetric I-V curves measured on single NW by the metal-semiconductor-metal model based on thermionic field emission theory. - Graphical abstract: Large-scale high quality CdS nanowires (NWs) with uniform diameter were synthesized by using a rapid and simple solvothermal route. The reaction time is reduced to 2 h, comparing to other synthesis which needed long reaction time up to 12 h. In addition, the as-prepared CdS nanowires have more uniform diameter and high yield. More importantly, the I-V curve of present single CdS nanowire has a good symmetric characteristic as expected by the theory.

  12. Study of GaN nanowires converted from β-Ga2O3 and photoconduction in a single nanowire

    Science.gov (United States)

    Kumar, Mukesh; Kumar, Sudheer; Chauhan, Neha; Sakthi Kumar, D.; Kumar, Vikram; Singh, R.

    2017-08-01

    The formation of GaN nanowires from β-Ga2O3 nanowires and photoconduction in a fabricated single GaN nanowire device has been studied. Wurtzite phase GaN were formed from monoclinic β-Ga2O3 nanowires with or without catalyst particles at their tips. The formation of faceted nanostructures from catalyst droplets presented on a nanowire tip has been discussed. The nucleation of GaN phases in β-Ga2O3 nanowires and their subsequent growth due to interfacial strain energy has been examined using a high resolution transmission electron microscope. The high quality of the converted GaN nanowire is confirmed by fabricating single nanowire photoconducting devices which showed ultra high responsivity under ultra-violet illumination.

  13. Perspectives of single cast nanowires technology

    International Nuclear Information System (INIS)

    Ioisher, Anatolii; Badinter, Efim; Postolache, Vitalie; Leporda, Nicolae; Tiginyanu, Ion; Monaico, Eduard

    2011-01-01

    The paper is dedicated to production potential of glass-coated cast nanowire with metal-, semimetal- and semiconductor-based cores by means of Taylor-Ulitovsky method. Criteria of melted core-formative material penetration into a drawing capillary were analyzed. Theoretical preconditions of the reduction of cast microwire diameter up to nano-dimensions of core are reviewed and an improved method of cast nanowire manufacturing is proposed. Correctness of conclusions was experimentally proved and laboratory samples of micro- and nano-wires with core diameter of about 200-300 nanometers were produced, even in case of materials with poor adhesion.

  14. Single cell detection using a magnetic zigzag nanowire biosensor.

    Science.gov (United States)

    Huang, Hao-Ting; Ger, Tzong-Rong; Lin, Ya-Hui; Wei, Zung-Hang

    2013-08-07

    A magnetic zigzag nanowire device was designed for single cell biosensing. Nanowires with widths of 150, 300, 500, and 800 nm were fabricated on silicon trenches by electron beam lithography, electron beam evaporation, and lift-off processes. Magnetoresistance measurements were performed before and after the attachment of a single magnetic cell to the nanowires to characterize the magnetic signal change due to the influence of the magnetic cell. Magnetoresistance responses were measured in different magnetic field directions, and the results showed that this nanowire device can be used for multi-directional detection. It was observed that the highest switching field variation occurred in a 150 nm wide nanowire when the field was perpendicular to the substrate plane. On the other hand, the highest magnetoresistance ratio variation occurred in a 800 nm wide nanowire also when the field was perpendicular to the substrate plane. Besides, the trench-structured substrate proposed in this study can fix the magnetic cell to the sensor in a fluid environment, and the stray field generated by the corners of the magnetic zigzag nanowires has the function of actively attracting the magnetic cells for detection.

  15. 1D-transport properties of single superconducting lead nanowires

    DEFF Research Database (Denmark)

    Michotte, S.; Mátéfi-Tempfli, Stefan; Piraux, L.

    2003-01-01

    of the nanowire is small enough to ensure a 1D superconducting regime in a wide temperature range below T. The non-zero resistance in the superconducting state and its variation caused by fluctuations of the superconducting order parameter were measured versus temperature, magnetic field, and applied DC current......We report on the transport properties of single superconducting lead nanowires grown by an electrodeposition technique, embedded in a nanoporous track-etched polymer membrane. The nanowires are granular, have uniform diameter of ̃40 nm and a very large aspect ratio (̃500). The diameter...

  16. Athermal avalanche in bilayer superconducting nanowire single-photon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Verma, V. B., E-mail: verma@nist.gov; Lita, A. E.; Stevens, M. J.; Mirin, R. P.; Nam, S. W. [National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305 (United States)

    2016-03-28

    We demonstrate that two superconducting nanowires separated by a thin insulating barrier can undergo an avalanche process. In this process, Joule heating caused by a photodetection event in one nanowire and the associated production of athermal phonons which are transmitted through the barrier cause the transition of the adjacent nanowire from the superconducting to the normal state. We show that this process can be utilized in the fabrication of superconducting nanowire single photon detectors to improve the signal-to-noise ratio, reduce system jitter, maximize device area, and increase the external efficiency over a very broad range of wavelengths. Furthermore, the avalanche mechanism may provide a path towards a superconducting logic element based on athermal gating.

  17. Topological superconductivity in metallic nanowires fabricated with a scanning tunneling microscope

    International Nuclear Information System (INIS)

    Rodrigo, J G; Crespo, V; Suderow, H; Vieira, S; Guinea, F

    2013-01-01

    We report on several low-temperature experiments supporting the presence of Majorana fermions in superconducting lead nanowires fabricated with a scanning tunneling microscope (STM). These nanowires are the connecting bridges between the STM tip and the sample resulting from indentation–retraction processes. We show here that by a controlled tuning of the nanowire region, in which superconductivity is confined by applied magnetic fields, the conductance curves obtained in these situations are indicative of topological superconductivity and Majorana fermions. The most prominent feature of this behavior is the emergence of a zero bias peak in the conductance curves, superimposed on a background characteristic of the conductance between a normal metal and a superconductor in the Andreev regime. The zero bias peak emerges in some nanowires when a magnetic field larger than the lead bulk critical field is applied. This field drives one of the electrodes into the normal state while the other, the tip, remains superconducting on its apex. Meanwhile a topological superconducting state appears in the connecting nanowire of nanometric size. (paper)

  18. Tracking Ultrafast Carrier Dynamics in Single Semiconductor Nanowire Heterostructures

    Directory of Open Access Journals (Sweden)

    Taylor A.J.

    2013-03-01

    Full Text Available An understanding of non-equilibrium carrier dynamics in silicon (Si nanowires (NWs and NW heterostructures is very important due to their many nanophotonic and nanoelectronics applications. Here, we describe the first measurements of ultrafast carrier dynamics and diffusion in single heterostructured Si nanowires, obtained using ultrafast optical microscopy. By isolating individual nanowires, we avoid complications resulting from the broad size and alignment distribution in nanowire ensembles, allowing us to directly probe ultrafast carrier dynamics in these quasi-one-dimensional systems. Spatially-resolved pump-probe spectroscopy demonstrates the influence of surface-mediated mechanisms on carrier dynamics in a single NW, while polarization-resolved femtosecond pump-probe spectroscopy reveals a clear anisotropy in carrier lifetimes measured parallel and perpendicular to the NW axis, due to density-dependent Auger recombination. Furthermore, separating the pump and probe spots along the NW axis enabled us to track space and time dependent carrier diffusion in radial and axial NW heterostructures. These results enable us to reveal the influence of radial and axial interfaces on carrier dynamics and charge transport in these quasi-one-dimensional nanosystems, which can then be used to tailor carrier relaxation in a single nanowire heterostructure for a given application.

  19. Single-electron tunnel junction array

    International Nuclear Information System (INIS)

    Likharev, K.K.; Bakhvalov, N.S.; Kazacha, G.S.; Serdyukova, S.I.

    1989-01-01

    The authors have carried out an analysis of statics and dynamics of uniform one-dimensional arrays of ultrasmall tunnel junctions. The correlated single-electron tunneling in the junctions of the array results in its behavior qualitatively similar to that of the Josephson transmission line. In particular, external electric fields applied to the array edges can inject single-electron-charged solitons into the array interior. Shape of such soliton and character of its interactions with other solitons and the array edges are very similar to those of the Josephson vortices (sine-Gordon solitons) in the Josephson transmission line. Under certain conditions, a coherent motion of the soliton train along the array is possible, resulting in generation of narrowband SET oscillations with frequency f/sub s/ = /e where is the dc current flowing along the array

  20. Fabrication of metallic nanowires with a scanning tunnelling microscope

    NARCIS (Netherlands)

    Kramer, N.; Kramer, N.; Birk, H.; Jorritsma, J.; Schönenberger, C.

    1995-01-01

    A procedure to pattern thin metal films on a nanometer scale with a scanning tunneling microscope (STM) operating in air is reported. A 30 nm film of hydrogenated amorphous silicon (a‐Si:H) is deposited on a 10 nm film of TaIr. Applying a negative voltage between the STM tip and the a‐Si:H film

  1. X-ray diffraction from single GaAs nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Biermanns, Andreas

    2012-11-12

    In recent years, developments in X-ray focussing optics have allowed to produce highly intense, coherent X-ray beams with spot sizes in the range of 100 nm and below. Together with the development of new experimental stations, X-ray diffraction techniques can now be applied to study single nanometer-sized objects. In the present work, X-ray diffraction is applied to study different aspects of the epitaxial growth of GaAs nanowires. Besides conventional diffraction methods, which employ X-ray beams with dimensions of several tens of {mu}m, special emphasis lies on the use of nanodiffraction methods which allow to study single nanowires in their as-grown state without further preparation. In particular, coherent X-ray diffraction is applied to measure simultaneously the 3-dimensional shape and lattice parameters of GaAs nanowires grown by metal-organic vapor phase epitaxy. It is observed that due to a high density of zinc-blende rotational twins within the nanowires, their lattice parameter deviates systematically from the bulk zinc-blende phase. In a second step, the initial stage in the growth of GaAs nanowires on Si (1 1 1) surfaces is studied. This nanowires, obtained by Ga-assisted growth in molecular beam epitaxy, grow predominantly in the cubic zinc-blende structure, but contain inclusions of the hexagonal wurtzite phase close to their bottom interface. Using nanodiffraction methods, the position of the different structural units along the growth axis is determined. Because the GaAs lattice is 4% larger than silicon, these nanowires release their lattice mismatch by the inclusion of dislocations at the interface. Whereas NWs with diameters below 50 nm are free of strain, a rough interface structure in nanowires with diameters above 100 nm prevents a complete plastic relaxation, leading to a residual strain at the interface that decays elastically along the growth direction. Finally, measurements on GaAs-core/InAs-shell nanowire heterostructures are presented

  2. Waveguide-Coupled Superconducting Nanowire Single-Photon Detectors

    Science.gov (United States)

    Beyer, Andrew D.; Briggs, Ryan M.; Marsili, Francesco; Cohen, Justin D.; Meenehan, Sean M.; Painter, Oskar J.; Shaw, Matthew D.

    2015-01-01

    We have demonstrated WSi-based superconducting nanowire single-photon detectors coupled to SiNx waveguides with integrated ring resonators. This photonics platform enables the implementation of robust and efficient photon-counting detectors with fine spectral resolution near 1550 nm.

  3. Harmonics Generation by Surface Plasmon Polaritons on Single Nanowires.

    Science.gov (United States)

    de Hoogh, Anouk; Opheij, Aron; Wulf, Matthias; Rotenberg, Nir; Kuipers, L

    2016-08-17

    We present experimental observations of visible wavelength second- and third-harmonic generation on single plasmonic nanowires of variable widths. We identify that near-infrared surface plasmon polaritons, which are guided along the nanowire, act as the source of the harmonics generation. We discuss the underlying mechanism of this nonlinear process, using a combination of spatially resolved measurements and numerical simulations to show that the visible harmonics are generated via a combination of both local and propagating plasmonic modes. Our results provide the first demonstration of nanoscale nonlinear optics with guided, propagating plasmonic modes on a lithographically defined chip, opening up new routes toward integrated optical circuits for information processing.

  4. Unveiling the Formation Pathway of Single Crystalline Porous Silicon Nanowires

    Science.gov (United States)

    Zhong, Xing; Qu, Yongquan; Lin, Yung-Chen; Liao, Lei; Duan, Xiangfeng

    2011-01-01

    Porous silicon nanowire is emerging as an interesting material system due to its unique combination of structural, chemical, electronic, and optical properties. To fully understand their formation mechanism is of great importance for controlling the fundamental physical properties and enabling potential applications. Here we present a systematic study to elucidate the mechanism responsible for the formation of porous silicon nanowires in a two-step silver-assisted electroless chemical etching method. It is shown that silicon nanowire arrays with various porosities can be prepared by varying multiple experimental parameters such as the resistivity of the starting silicon wafer, the concentration of oxidant (H2O2) and the amount of silver catalyst. Our study shows a consistent trend that the porosity increases with the increasing wafer conductivity (dopant concentration) and oxidant (H2O2) concentration. We further demonstrate that silver ions, formed by the oxidation of silver, can diffuse upwards and re-nucleate on the sidewalls of nanowires to initiate new etching pathways to produce porous structure. The elucidation of this fundamental formation mechanism opens a rational pathway to the production of wafer-scale single crystalline porous silicon nanowires with tunable surface areas ranging from 370 m2·g−1 to 30 m2·g−1, and can enable exciting opportunities in catalysis, energy harvesting, conversion, storage, as well as biomedical imaging and therapy. PMID:21244020

  5. Direct Photonic-Plasmonic Coupling and Routing in Single Nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Yan, Rouxue; Pausauskie, Peter; Huang, Jiaxing; Yang, Piedong

    2009-10-20

    Metallic nanoscale structures are capable of supporting surface plasmon polaritons (SPPs), propagating collective electron oscillations with tight spatial confinement at the metal surface. SPPs represent one of the most promising structures to beat the diffraction limit imposed by conventional dielectric optics. Ag nano wires have drawn increasing research attention due to 2D sub-100 nm mode confinement and lower losses as compared with fabricated metal structures. However, rational and versatile integration of Ag nanowires with other active and passive optical components, as well as Ag nanowire based optical routing networks, has yet to be achieved. Here, we demonstrate that SPPs can be excited simply by contacting a silver nanowire with a SnO2 nanoribbon that serves both as an unpolarized light source and a dielectric waveguide. The efficient coupling makes it possible to measure the propagation-distance-dependent waveguide spectra and frequency-dependent propagation length on a single Ag nanowire. Furthermore, we have demonstrated prototypical photonic-plasmonic routing devices, which are essential for incorporating low-loss Ag nanowire waveguides as practical components into high-capacity photonic circuits.

  6. Coupling of a single quantum emitter to end-to-end aligned silver nanowires

    DEFF Research Database (Denmark)

    Kumar, Shailesh; Huck, Alexander; Chen, Yuntian

    2013-01-01

    We report on the observation of coupling a single nitrogen vacancy (NV) center in a nanodiamond crystal to a propagating plasmonic mode of silver nanowires. The nanocrystal is placed either near the apex of a single silver nanowire or in the gap between two end-to-end aligned silver nanowires. We...

  7. Macroscopic Quantum Tunneling in Superconducting Junctions of β-Ag2Se Topological Insulator Nanowire.

    Science.gov (United States)

    Kim, Jihwan; Kim, Bum-Kyu; Kim, Hong-Seok; Hwang, Ahreum; Kim, Bongsoo; Doh, Yong-Joo

    2017-11-08

    We report on the fabrication and electrical transport properties of superconducting junctions made of β-Ag 2 Se topological insulator (TI) nanowires in contact with Al superconducting electrodes. The temperature dependence of the critical current indicates that the superconducting junction belongs to a short and diffusive junction regime. As a characteristic feature of the narrow junction, the critical current decreases monotonously with increasing magnetic field. The stochastic distribution of the switching current exhibits the macroscopic quantum tunneling behavior, which is robust up to T = 0.8 K. Our observations indicate that the TI nanowire-based Josephson junctions can be a promising building block for the development of nanohybrid superconducting quantum bits.

  8. Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

    International Nuclear Information System (INIS)

    Cleland, A.N.

    1991-04-01

    Experiments investigating the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very small capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters; the tunneling rate in the moderately damped (Q ∼ 1) junction is seen to be reduced by a factor of 300 from that predicted for an undamped junction. The phase is seen to be a good quantum-mechanical variable. The experiments on small capacitance tunnel junctions extend the measurements on the larger-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wavefunction has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias. I present the first clear observation of the Coulomb blockade in single junctions. The electrical environment of the tunnel junction, however, strongly affects the behavior of the junction: higher resistance leads are observed to greatly sharpen the Coulomb blockade over that seen with lower resistance leads. I present theoretical descriptions of how the environment influences the junctions; comparisons with the experimental results are in reasonable agreement

  9. The phonon-assisted tunneling mechanism of conduction in ZnO nanowires and films

    International Nuclear Information System (INIS)

    Pipinys, Povilas; Ohlckers, Per

    2010-01-01

    The phonon-assisted tunneling (PhAT) model is applied for an explanation of the conductivity dependence on temperature and temperature-dependent I-V characteristics measured by other investigators for zinc oxide (ZnO) nanowires and films. Our proposed model describes well not only conductivity dependence on temperature measured in a wide temperature range, but also temperature-dependent I-V data using the same set of parameters characterizing the material under investigation. The values of active phonons energy are estimated from a fit of the conductivity dependence to temperature data with the PhAT theory.

  10. Laser-induced single point nanowelding of silver nanowires

    International Nuclear Information System (INIS)

    Dai, Shuowei; Li, Qiang; Liu, Guoping; Yang, Hangbo; Yang, Yuanqing; Zhao, Ding; Wang, Wei; Qiu, Min

    2016-01-01

    Nanowelding of nanomaterials opens up an emerging set of applications in transparent conductors, thin-film solar cells, nanocatalysis, cancer therapy, and nanoscale patterning. Single point nanowelding (SPNW) is highly demanded for building complex nanostructures. In this letter, the precise control of SPNW of silver nanowires is explored in depth, where the nanowelding is laser-induced through the plasmonic resonance enhanced photothermal effect. It is shown that the illumination position is a critical factor for the nanowelding process. As an example of performance enhancement, output at wire end can be increased by 65% after welding for a plasmonic nanocoupler. Thus, single point nanowelding technique shows great potentials for high-performance electronic and photonic devices based on nanowires, such as nanoelectronic circuits and plasmonic nanodevices.

  11. Laser-induced single point nanowelding of silver nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Dai, Shuowei; Li, Qiang, E-mail: qiangli@zju.edu.cn; Liu, Guoping; Yang, Hangbo; Yang, Yuanqing; Zhao, Ding; Wang, Wei; Qiu, Min, E-mail: minqiu@zju.edu.cn [State Key Laboratory of Modern Optical Instrumentation, College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027 (China)

    2016-03-21

    Nanowelding of nanomaterials opens up an emerging set of applications in transparent conductors, thin-film solar cells, nanocatalysis, cancer therapy, and nanoscale patterning. Single point nanowelding (SPNW) is highly demanded for building complex nanostructures. In this letter, the precise control of SPNW of silver nanowires is explored in depth, where the nanowelding is laser-induced through the plasmonic resonance enhanced photothermal effect. It is shown that the illumination position is a critical factor for the nanowelding process. As an example of performance enhancement, output at wire end can be increased by 65% after welding for a plasmonic nanocoupler. Thus, single point nanowelding technique shows great potentials for high-performance electronic and photonic devices based on nanowires, such as nanoelectronic circuits and plasmonic nanodevices.

  12. Single-atom contacts with a scanning tunnelling microscope

    International Nuclear Information System (INIS)

    Kroeger, J; Neel, N; Sperl, A; Wang, Y F; Berndt, R

    2009-01-01

    The tip of a cryogenic scanning tunnelling microscope is used to controllably contact single atoms adsorbed on metal surfaces. The transition between tunnelling and contact is gradual for silver, while contact to adsorbed gold atoms is abrupt. The single-atom junctions are stable and enable spectroscopic measurements of, e.g., the Abrikosov-Suhl resonance of single Kondo impurities.

  13. Observation of plastic deformation in freestanding single crystal Au nanowires

    International Nuclear Information System (INIS)

    Lee, Dongyun; Zhao Manhong; Wei Xiaoding; Chen Xi; Jun, Seong C.; Hone, James; Herbert, Erik G.; Oliver, Warren C.; Kysar, Jeffrey W.

    2006-01-01

    Freestanding single crystal nanowires of gold were fabricated from a single grain of pure gold leaf by standard lithographic techniques, with center section of 7 μm in length, 250 nm in width, and 100 nm in thickness. The ends remained anchored to a silicon substrate. The specimens were deflected via nanoindenter until plastic deformation was achieved. Nonlocalized and localized plastic deformations were observed. The resulting force-displacement curves were simulated using continuum single crystal plasticity. A set of material parameters which closely reproduce the experimental results suggests that the initial critical resolved shear stress was as high as 135 MPa

  14. New Generation of Superconducting Nanowire Single-Photon Detectors

    Directory of Open Access Journals (Sweden)

    Goltsman G.N.

    2015-01-01

    Full Text Available We present an overview of recent results for new generation of infrared and optical superconducting nanowire single-photon detectors (SNSPDs that has already demonstrated a performance that makes them devices-of-choice for many applications. SNSPDs provide high efficiency for detecting individual photons while keeping dark counts and timing jitter minimal. Besides superior detection performance over a broad optical bandwidth, SNSPDs are also compatible with an integrated optical platform as a crucial requirement for applications in emerging quantum photonic technologies. By embedding SNSPDs in nanophotonic circuits we realize waveguide integrated single photon detectors which unite all desirable detector properties in a single device.

  15. Coherent interaction of single molecules and plasmonic nanowires

    Science.gov (United States)

    Gerhardt, Ilja; Grotz, Bernhard; Siyushev, Petr; Wrachtrup, Jörg

    2017-09-01

    Quantum plasmonics opens the option to integrate complex quantum optical circuitry onto chip scale devices. In the past, often external light sources were used and nonclassical light was coupled in and out of plasmonic structures, such as hole arrays or waveguide structures. Another option to launch single plasmonic excitations is the coupling of single emitters in the direct proximity of, e.g., a silver or gold nanostructure. Here, we present our attempts to integrate the research of single emitters with wet-chemically grown silver nanowires. The emitters of choice are single organic dye molecules under cryogenic conditions, which are known to act as high-brightness and extremely narrow-band single photon sources. Another advantage is their high optical nonlinearity, such that they might mediate photon-photon interactions on the nanoscale. We report on the coupling of a single molecule fluorescence emission through the wire over the length of several wavelengths. The transmission of coherently emitted photons is proven by an extinction type experiment. As for influencing the spectral properties of a single emitter, we are able to show a remote change of the line-width of a single terrylene molecule, which is in close proximity to the nanowire.

  16. Numerical analysis of band tails in nanowires and their effects on the performance of tunneling field-effect transistors

    Science.gov (United States)

    Tanaka, Takahisa; Uchida, Ken

    2018-06-01

    Band tails in heavily doped semiconductors are one of the important parameters that determine transfer characteristics of tunneling field-effect transistors. In this study, doping concentration and doing profile dependences of band tails in heavily doped Si nanowires were analyzed by a nonequilibrium Green function method. From the calculated band tails, transfer characteristics of nanowire tunnel field-effect transistors were numerically analyzed by Wentzel–Kramer–Brillouin approximation with exponential barriers. The calculated transfer characteristics demonstrate that the band tails induced by dopants degrade the subthreshold slopes of Si nanowires from 5 to 56 mV/dec in the worst case. On the other hand, surface doping leads to a high drain current while maintaining a small subthreshold slope.

  17. Tunneling spectroscopy of a germanium quantum dot in single-hole transistors with self-aligned electrodes

    International Nuclear Information System (INIS)

    Chen, G-L; Kuo, David M T; Lai, W-T; Li, P-W

    2007-01-01

    We have fabricated a Ge quantum dot (QD) (∼10 nm) single-hole transistor with self-aligned electrodes using thermal oxidation of a SiGe-on-insulator nanowire based on FinFET technology. This fabricated device exhibits clear Coulomb blockade oscillations with large peak-to-valley ratio (PVCR) of 250-750 and negative differential conductance with PVCR of ∼12 at room temperature. This reveals that the gate-induced tunneling barrier lowering is effectively suppressed due to the self-aligned electrode structure. The magnitude of tunneling current spectra also reveals the coupling strengths between the energy levels of the Ge QD and electrodes

  18. Characterization and Optical Properties of the Single Crystalline SnS Nanowire Arrays

    Directory of Open Access Journals (Sweden)

    Yue GH

    2009-01-01

    Full Text Available Abstract The SnS nanowire arrays have been successfully synthesized by the template-assisted pulsed electrochemical deposition in the porous anodized aluminum oxide template. The investigation results showed that the as-synthesized nanowires are single crystalline structures and they have a highly preferential orientation. The ordered SnS nanowire arrays are uniform with a diameter of 50 nm and a length up to several tens of micrometers. The synthesized SnS nanowires exhibit strong absorption in visible and near-infrared spectral region and the direct energy gapE gof SnS nanowires is 1.59 eV.

  19. Construction of a four tip scanning tunneling microscope/scanning electron microscope combination and conductivity measurements of silicide nanowires

    International Nuclear Information System (INIS)

    Zubkov, Evgeniy

    2013-01-01

    In this work the combination of a four-tip scanning tunneling microscope with a scanning electron microscope is presented. By means of this apparatus it is possible to perform the conductivity measurements on the in-situ prepared nanostructures in ultra-high vacuum. With the aid of a scanning electron microscope (SEM), it becomes possible to position the tunneling tips of the four-tip scanning tunneling microscope (STM), so that an arrangement for a four-point probe measurement on nanostructures can be obtained. The STM head was built according to the novel coaxial Beetle concept. This concept allows on the one hand, a very compact arrangement of the components of the STM and on the other hand, the new-built STM head has a good mechanical stability, in order to achieve atomic resolution with all four STM units. The atomic resolution of the STM units was confirmed by scanning a Si(111)-7 x 7 surface. The thermal drift during the STM operation, as well as the resonant frequencies of the mechanical structure of the STM head, were determined. The scanning electron microscope allows the precise and safe navigation of the tunneling tips on the sample surface. Multi tip spectroscopy with up to four STM units can be performed synchronously. To demonstrate the capabilities of the new-built apparatus the conductivity measurements were carried out on metallic yttrium silicide nanowires. The nanowires were prepared by the in-situ deposition of yttrium on a heated Si(110) sample surface. Current-voltage curves were recorded on the nanowires and on the wetting layer in-between. The curves indicate an existence of the Schottky barrier between the yttrium silicide nanowires and the silicon bulk. By means of the two-tip measurements with a gate, the insulating property of the Schottky barrier has been confirmed. Using this Schottky barrier, it is possible to limit the current to the nanowire and to prevent it from flowing through the silicon bulk. A four-tip resistance measurement

  20. Self-diffusion in single crystalline silicon nanowires

    Science.gov (United States)

    Südkamp, T.; Hamdana, G.; Descoins, M.; Mangelinck, D.; Wasisto, H. S.; Peiner, E.; Bracht, H.

    2018-04-01

    Self-diffusion experiments in single crystalline isotopically controlled silicon nanowires with diameters of 70 and 400 nm at 850 and 1000 °C are reported. The isotope structures were first epitaxially grown on top of silicon substrate wafers. Nanowires were subsequently fabricated using a nanosphere lithography process in combination with inductively coupled plasma dry reactive ion etching. Three-dimensional profiling of the nanosized structure before and after diffusion annealing was performed by means of atom probe tomography (APT). Self-diffusion profiles obtained from APT analyses are accurately described by Fick's law for self-diffusion. Data obtained for silicon self-diffusion in nanowires are equal to the results reported for bulk silicon crystals, i.e., finite size effects and high surface-to-volume ratios do not significantly affect silicon self-diffusion. This shows that the properties of native point defects determined from self-diffusion in bulk crystals also hold for nanosized silicon structures with diameters down to 70 nm.

  1. "Size-Independent" Single-Electron Tunneling.

    Science.gov (United States)

    Zhao, Jianli; Sun, Shasha; Swartz, Logan; Riechers, Shawn; Hu, Peiguang; Chen, Shaowei; Zheng, Jie; Liu, Gang-Yu

    2015-12-17

    Incorporating single-electron tunneling (SET) of metallic nanoparticles (NPs) into modern electronic devices offers great promise to enable new properties; however, it is technically very challenging due to the necessity to integrate ultrasmall (<10 nm) particles into the devices. The nanosize requirements are intrinsic for NPs to exhibit quantum or SET behaviors, for example, 10 nm or smaller, at room temperature. This work represents the first observation of SET that defies the well-known size restriction. Using polycrystalline Au NPs synthesized via our newly developed solid-state glycine matrices method, a Coulomb Blockade was observed for particles as large as tens of nanometers, and the blockade voltage exhibited little dependence on the size of the NPs. These observations are counterintuitive at first glance. Further investigations reveal that each observed SET arises from the ultrasmall single crystalline grain(s) within the polycrystal NP, which is (are) sufficiently isolated from the nearest neighbor grains. This work demonstrates the concept and feasibility to overcome orthodox spatial confinement requirements to achieve quantum effects.

  2. Method for manufacturing a single crystal nanowire

    NARCIS (Netherlands)

    van den Berg, Albert; Bomer, Johan G.; Carlen, Edwin; Chen, S.; Kraaijenhagen, Roderik Adriaan; Pinedo, Herbert Michael

    2013-01-01

    A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing

  3. Method for manufacturing a single crystal nanowire

    NARCIS (Netherlands)

    van den Berg, Albert; Bomer, Johan G.; Carlen, Edwin; Chen, S.; Kraaijenhagen, R.A.; Pinedo, Herbert Michael

    2010-01-01

    A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing

  4. Nanomanipulation and nanofabrication with multi-probe scanning tunneling microscope: from individual atoms to nanowires.

    Science.gov (United States)

    Qin, Shengyong; Kim, Tae-Hwan; Wang, Zhouhang; Li, An-Ping

    2012-06-01

    The wide variety of nanoscale structures and devices demands novel tools for handling, assembly, and fabrication at nanoscopic positioning precision. The manipulation tools should allow for in situ characterization and testing of fundamental building blocks, such as nanotubes and nanowires, as they are built into functional devices. In this paper, a bottom-up technique for nanomanipulation and nanofabrication is reported by using a 4-probe scanning tunneling microscope (STM) combined with a scanning electron microscope (SEM). The applications of this technique are demonstrated in a variety of nanosystems, from manipulating individual atoms to bending, cutting, breaking carbon nanofibers, and constructing nanodevices for electrical characterizations. The combination of the wide field of view of SEM, the atomic position resolution of STM, and the flexibility of multiple scanning probes is expected to be a valuable tool for rapid prototyping in the nanoscience and nanotechnology.

  5. Optimised quantum hacking of superconducting nanowire single-photon detectors.

    Science.gov (United States)

    Tanner, Michael G; Makarov, Vadim; Hadfield, Robert H

    2014-03-24

    We explore bright-light control of superconducting nanowire single-photon detectors (SNSPDs) in the shunted configuration (a practical measure to avoid latching). In an experiment, we simulate an illumination pattern the SNSPD would receive in a typical quantum key distribution system under hacking attack. We show that it effectively blinds and controls the SNSPD. The transient blinding illumination lasts for a fraction of a microsecond and produces several deterministic fake clicks during this time. This attack does not lead to elevated timing jitter in the spoofed output pulse, and hence does not introduce significant errors. Five different SNSPD chip designs were tested. We consider possible countermeasures to this attack.

  6. Optimised quantum hacking of superconducting nanowire single-photon detectors

    Science.gov (United States)

    Tanner, Michael G.; Makarov, Vadim; Hadfield, Robert H.

    2014-03-01

    We explore bright-light control of superconducting nanowire single-photon detectors (SNSPDs) in the shunted configuration (a practical measure to avoid latching). In an experiment, we simulate an illumination pattern the SNSPD would receive in a typical quantum key distribution system under hacking attack. We show that it effectively blinds and controls the SNSPD. The transient blinding illumination lasts for a fraction of a microsecond and produces several deterministic fake clicks during this time. This attack does not lead to elevated timing jitter in the spoofed output pulse, and hence does not introduce significant errors. Five different SNSPD chip designs were tested. We consider possible countermeasures to this attack.

  7. Quantum dot resonant tunneling diode single photon detector with aluminum oxide aperture defined tunneling area

    DEFF Research Database (Denmark)

    Li, H.W.; Kardynal, Beata; Ellis, D.J.P.

    2008-01-01

    Quantum dot resonant tunneling diode single photon detector with independently defined absorption and sensing areas is demonstrated. The device, in which the tunneling is constricted to an aperture in an insulating layer in the emitter, shows electrical characteristics typical of high quality res...

  8. Direct observation of short-circuit diffusion during the formation of a single cupric oxide nanowire

    International Nuclear Information System (INIS)

    Cheng, C-L; Ma, Y-R; Chou, M H; Huang, C Y; Yeh, V; Wu, S Y

    2007-01-01

    Short-circuit diffusion was observed in a single CuO nanowire synthesized using a thermal oxidation method. The confocal Raman spectra of a single CuO nanowire permit direct observation of the nature of an individual CuO nanowire. The parameter order obtained from the inverse Raman B g 2 peak linewidth results in the length dependence of the linewidth and a short-circuit diffusion length of 3.3 μm. The observed structural information is also consistent with the energy dispersive x-ray spectroscopic mapping. The results confirm that the growth of CuO nanowires occurs through the short-circuit diffusion mechanism

  9. Orientation-controlled synthesis and magnetism of single crystalline Co nanowires

    International Nuclear Information System (INIS)

    Huang, Gui-Fang; Huang, Wei-Qing; Wang, Ling-Ling; Zou, B.S.; Pan, Anlian

    2012-01-01

    Orientation control and the magnetic properties of single crystalline Co nanowires fabricated by electrodeposition have been systematically investigated. It is found that the orientation of Co nanowires can be effectively controlled by varying either the current density or the pore diameter of AAO templates. Lower current density or small diameter is favorable for forming the (1 0 0) texture, while higher current values or larger diameter leads to the emergence and enhancement of (1 1 0) texture of Co nanowires. The mechanism for the manipulated growth characterization is discussed in detail. The orientation of Co nanowires has a significant influence on the magnetic properties, resulting from the competition between the magneto-crystalline and shape anisotropy of Co nanowires. This work offers a simple method to manipulate the orientation and magnetic properties of nanowires for future applications. - Highlights: ► Single crystalline Co nanowires have successfully been grown by DC electrodeposition. ► Orientation controlling and its effect on magnetism of Co nanowires were investigated. ► The orientation of Co nanowires can be effectively controlled by varying current density. ► The crystalline orientation of Co nanowires has significant influence on the magnetic properties.

  10. Highly ordered uniform single-crystal Bi nanowires: fabrication and characterization

    International Nuclear Information System (INIS)

    Bisrat, Y; Luo, Z P; Davis, D; Lagoudas, D

    2007-01-01

    A mechanical pressure injection technique has been used to fabricate uniform bismuth (Bi) nanowires in the pores of an anodic aluminum oxide (AAO) template. The AAO template was prepared from general purity aluminum by a two-step anodization followed by heat treatment to achieve highly ordered nanochannels. The nanowires were then fabricated by an injection technique whereby the molten Bi was injected into the AAO template using a hydraulic pressure method. The Bi nanowires prepared by this method were found to be dense and continuous with uniform diameter throughout the length. Electron diffraction experiments using the transmission electron microscope on cross-sectional and free-standing longitudinal Bi nanowires showed that the majority of the individual nanowires were single crystalline, with preferred orientation of growth along the [011] zone axis of the pseudo-cubic structure. The work presented here provides an inexpensive and effective way of fabricating highly ordered single-crystalline Bi nanowires, with uniform size distributions

  11. Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates.

    Science.gov (United States)

    Lee, Myeongwon; Koo, Jamin; Chung, Eun-Ae; Jeong, Dong-Young; Koo, Yong-Seo; Kim, Sangsig

    2009-11-11

    A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p+ drain and n+ channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.

  12. Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates

    International Nuclear Information System (INIS)

    Lee, Myeongwon; Koo, Jamin; Chung, Eun-Ae; Jeong, Dong-Young; Kim, Sangsig; Koo, Yong-Seo

    2009-01-01

    A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p + drain and n + channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.

  13. Silicon nanowire-based tunneling field-effect transistors on flexible plastic substrates

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Myeongwon; Koo, Jamin; Chung, Eun-Ae; Jeong, Dong-Young; Kim, Sangsig [Department of Electrical Engineering and Institute for Nano Science, Korea University, 5-1, Anam-Dong, Seongbuk-Gu, Seoul 136-701 (Korea, Republic of); Koo, Yong-Seo, E-mail: sangsig@korea.ac.k [Department of Electrical Engineering, Seokyeong University, 16-1, Jungneung-dong, Seongbuk-gu, Seoul 136-704 (Korea, Republic of)

    2009-11-11

    A technique to implement silicon nanowire (SiNW)-based tunneling field-effect transistors (TFETs) on flexible plastic substrates is developed for the first time. The p-i-n configured Si NWs are obtained from an Si wafer using a conventional top-down CMOS-compatible technology, and they are then transferred onto the plastic substrate. Based on gate-controlled band-to-band tunneling (BTBT) as their working principle, the SiNW-based TFETs show normal p-channel switching behavior with a threshold voltage of -1.86 V and a subthreshold swing of 827 mV/dec. In addition, ambipolar conduction is observed due to the presence of the BTBT between the heavily doped p{sup +} drain and n{sup +} channel regions, indicating that our TFETs can operate in the n-channel mode as well. Furthermore, the BTBT generation rates for both the p-channel and n-channel operating modes are nearly independent of the bending state (strain = 0.8%) of the plastic substrate.

  14. Controlling growth density and patterning of single crystalline silicon nanowires

    International Nuclear Information System (INIS)

    Chang, Tung-Hao; Chang, Yu-Cheng; Liu, Fu-Ken; Chu, Tieh-Chi

    2010-01-01

    This study examines the usage of well-patterned Au nanoparticles (NPs) as a catalyst for one-dimensional growth of single crystalline Si nanowires (NWs) through the vapor-liquid-solid (VLS) mechanism. The study reports the fabrication of monolayer Au NPs through the self-assembly of Au NPs on a 3-aminopropyltrimethoxysilane (APTMS)-modified silicon substrate. Results indicate that the spin coating time of Au NPs plays a crucial role in determining the density of Au NPs on the surface of the silicon substrate and the later catalysis growth of Si NWs. The experiments in this study employed optical lithography to pattern Au NPs, treating them as a catalyst for Si NW growth. The patterned Si NW structures easily produced and controlled Si NW density. This approach may be useful for further studies on single crystalline Si NW-based nanodevices and their properties.

  15. Reliability of Single Crystal Silver Nanowire-Based Systems: Stress Assisted Instabilities.

    Science.gov (United States)

    Ramachandramoorthy, Rajaprakash; Wang, Yanming; Aghaei, Amin; Richter, Gunther; Cai, Wei; Espinosa, Horacio D

    2017-05-23

    Time-dependent mechanical characterization of nanowires is critical to understand their long-term reliability in applications, such as flexible-electronics and touch screens. It is also of great importance to develop a theoretical framework for experimentation and analysis on the mechanics of nanowires under time-dependent loading conditions, such as stress-relaxation and fatigue. Here, we combine in situ scanning electron microscope (SEM)/transmission electron microscope (TEM) tests with atomistic and phase-field simulations to understand the deformation mechanisms of single crystal silver nanowires held under constant strain. We observe that the nanowires initially undergo stress-relaxation, where the stress reduces with time and saturates after some time period. The stress-relaxation process occurs due to the formation of few dislocations and stacking faults. Remarkably, after a few hours the nanowires rupture suddenly. The reason for this abrupt failure of the nanowire was identified as stress-assisted diffusion, using phase-field simulations. Under a large applied strain, diffusion leads to the amplification of nanowire surface perturbation at long wavelengths and the nanowire fails at the stress-concentrated thin cross-sectional regions. An analytical analysis on the competition between the elastic energy and the surface energy predicts a longer time to failure for thicker nanowires than thinner ones, consistent with our experimental observations. The measured time to failure of nanowires under cyclic loading conditions can also be explained in terms of this mechanism.

  16. A high-efficiency electrically-pumped single-photon source based on a photonics nanowire

    DEFF Research Database (Denmark)

    Gregersen, Niels; Nielsen, Torben Roland; Mørk, Jesper

    An electrically-pumped single-photon source design with a predicted efficiency of 89% is proposed. The design is based on a quantum dot embedded in a photonic nanowire with tailored ends and optimized contact electrodes. Unlike cavity-based approaches, the photonic nanowire features broadband...

  17. Fabrication of magnetic tunnel junctions with a single-crystalline LiF tunnel barrier

    Science.gov (United States)

    Krishna Narayananellore, Sai; Doko, Naoki; Matsuo, Norihiro; Saito, Hidekazu; Yuasa, Shinji

    2018-04-01

    We fabricated Fe/LiF/Fe magnetic tunnel junctions (MTJs) by molecular beam epitaxy on a MgO(001) substrate, where LiF is an insulating tunnel barrier with the same crystal structure as MgO (rock-salt type). Crystallographical studies such as transmission electron microscopy and nanobeam electron diffraction observations revealed that the LiF tunnel barrier is single-crystalline and has a LiF(001)[100] ∥ bottom Fe(001)[110] crystal orientation, which is constructed in the same manner as MgO(001) on Fe(001). Also, the in-plane lattice mismatch between the LiF tunnel barrier and the Fe bottom electrode was estimated to be small (about 0.5%). Despite such advantages for the tunnel barrier of the MTJ, the observed tunnel magnetoresistance (MR) ratio was low (˜6% at 20 K) and showed a significant decrease with increasing temperature (˜1% at room temperature). The results imply that indirect tunneling and/or thermally excited carriers in the LiF tunnel barrier, in which the current basically is not spin-polarized, play a major role in electrical transport in the MTJ.

  18. Inelastic electron tunneling spectroscopy of a single nuclear spin.

    Science.gov (United States)

    Delgado, F; Fernández-Rossier, J

    2011-08-12

    Detection of a single nuclear spin constitutes an outstanding problem in different fields of physics such as quantum computing or magnetic imaging. Here we show that the energy levels of a single nuclear spin can be measured by means of inelastic electron tunneling spectroscopy (IETS). We consider two different systems, a magnetic adatom probed with scanning tunneling microscopy and a single Bi dopant in a silicon nanotransistor. We find that the hyperfine coupling opens new transport channels which can be resolved at experimentally accessible temperatures. Our simulations evince that IETS yields information about the occupations of the nuclear spin states, paving the way towards transport-detected single nuclear spin resonance.

  19. Microwave-induced co-tunneling in single electron tunneling transistors

    DEFF Research Database (Denmark)

    Ejrnaes, M.; Savolainen, M.; Manscher, M.

    2002-01-01

    on rubber bellows. Cross-talk was minimized by using individual coaxial lines between the sample and the room temperature electronics: The co-tunneling experiments were performed at zero DC bias current by measuring the voltage response to a very small amplitude 2 Hz current modulation with the gate voltage......The influence of microwaves on the co-tunneling in single electron tunneling transistors has been investigated as function of frequency and power in the temperature range from 150 to 500 mK. All 20 low frequency connections and the RF line were filtered, and the whole cryostat was suspended...

  20. Superconducting nanowire single-photon detectors: physics and applications

    International Nuclear Information System (INIS)

    Natarajan, Chandra M; Tanner, Michael G; Hadfield, Robert H

    2012-01-01

    Single-photon detectors based on superconducting nanowires (SSPDs or SNSPDs) have rapidly emerged as a highly promising photon-counting technology for infrared wavelengths. These devices offer high efficiency, low dark counts and excellent timing resolution. In this review, we consider the basic SNSPD operating principle and models of device behaviour. We give an overview of the evolution of SNSPD device design and the improvements in performance which have been achieved. We also evaluate device limitations and noise mechanisms. We survey practical refrigeration technologies and optical coupling schemes for SNSPDs. Finally we summarize promising application areas, ranging from quantum cryptography to remote sensing. Our goal is to capture a detailed snapshot of an emerging superconducting detector technology on the threshold of maturity. (topical review)

  1. Nanolithography based contacting method for electrical measurements on single template synthesized nanowires

    DEFF Research Database (Denmark)

    Fusil, S.; Piraux, L.; Mátéfi-Tempfli, Stefan

    2005-01-01

    A reliable method enabling electrical measurements on single nanowires prepared by electrodeposition in an alumina template is described. This technique is based on electrically controlled nanoindentation of a thin insulating resist deposited on the top face of the template filled by the nanowires....... We show that this method is very flexible, allowing us to electrically address single nanowires of controlled length down to 100 nm and of desired composition. Using this approach, current densities as large as 10 A cm were successfully injected through a point contact on a single magnetic...

  2. Waveguide-integrated single- and multi-photon detection at telecom wavelengths using superconducting nanowires

    International Nuclear Information System (INIS)

    Ferrari, Simone; Kahl, Oliver; Kovalyuk, Vadim; Goltsman, Gregory N.; Korneev, Alexander; Pernice, Wolfram H. P.

    2015-01-01

    We investigate single- and multi-photon detection regimes of superconducting nanowire detectors embedded in silicon nitride nanophotonic circuits. At near-infrared wavelengths, simultaneous detection of up to three photons is observed for 120 nm wide nanowires biased far from the critical current, while narrow nanowires below 100 nm provide efficient single photon detection. A theoretical model is proposed to determine the different detection regimes and to calculate the corresponding internal quantum efficiency. The predicted saturation of the internal quantum efficiency in the single photon regime agrees well with plateau behavior observed at high bias currents

  3. Waveguide-integrated single- and multi-photon detection at telecom wavelengths using superconducting nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Ferrari, Simone; Kahl, Oliver [Institute of Nanotechnology, Karlsruhe Institute of Technology, Karlsruhe 76132 (Germany); Kovalyuk, Vadim [Institute of Nanotechnology, Karlsruhe Institute of Technology, Karlsruhe 76132 (Germany); Department of Physics, Moscow State Pedagogical University, Moscow 119992 (Russian Federation); Goltsman, Gregory N. [Department of Physics, Moscow State Pedagogical University, Moscow 119992 (Russian Federation); National Research University Higher School of Economics, 20 Myasnitskaya Ulitsa, Moscow 101000 (Russian Federation); Korneev, Alexander [Department of Physics, Moscow State Pedagogical University, Moscow 119992 (Russian Federation); Moscow Institute of Physics and Technology (State University), Moscow 141700 (Russian Federation); Pernice, Wolfram H. P., E-mail: wolfram.pernice@kit.edu [Institute of Nanotechnology, Karlsruhe Institute of Technology, Karlsruhe 76132 (Germany); Department of Physics, University of Münster, 48149 Münster (Germany)

    2015-04-13

    We investigate single- and multi-photon detection regimes of superconducting nanowire detectors embedded in silicon nitride nanophotonic circuits. At near-infrared wavelengths, simultaneous detection of up to three photons is observed for 120 nm wide nanowires biased far from the critical current, while narrow nanowires below 100 nm provide efficient single photon detection. A theoretical model is proposed to determine the different detection regimes and to calculate the corresponding internal quantum efficiency. The predicted saturation of the internal quantum efficiency in the single photon regime agrees well with plateau behavior observed at high bias currents.

  4. Photoluminescence Polarization Anisotropy in a Single Heterostructured III-V Nanowire with Mixed Crystal Phases

    International Nuclear Information System (INIS)

    Moses, A. F.; Hoang, T. B.; Ahtapodov, L.; Dheeraj, D. L.; Fimland, B. O.; Weman, H.; Helvoort, A. T. J. van

    2011-01-01

    Low temperature (10 K) micro-photoluminescence (μ-PL) of single GaAs/AlGaAs core-shell nanowires with single GaAsSb inserts were measured. The PL emission from the zinc blende GaAsSb insert is strongly polarized along the nanowire axis while the PL emission from the wurtzite GaAs nanowire is perpendiculary polarized to the nanowire axis. The result indicates that the crystal phase, through the optical selection rules, has significant effect on the polarization of the PL from NWs besides the dielectric mismatch. The analysis of the PL results based on the electronic structure of these nanowires supports the correlation between the crystal phase and the PL emission.

  5. Focused ion beam patterning to dielectrophoretically assemble single nanowire based devices

    International Nuclear Information System (INIS)

    La Ferrara, V; Massera, E; Francia, G Di; Alfano, B

    2010-01-01

    Direct-write processing is increasingly taking place in nanodevice fabrication. In this work, Focused Ion Beam (FIB), a powerful tool in maskless micromachining, is used for electrode patterning onto a silicon/silicon nitride substrate. Then a single palladium nanowire is assembled between electrodes by means of dielectrophoresis (DEP). The nanowire morphology depends on the electrode pattern when DEP conditions are fixed. FIB/DEP combination overcomes the problem of nanowire electrical contamination due to gallium ion bombardment and the as-grown nanowire retains its basic electrical properties. Single nanowire based devices have been fabricated with this novel approach and have been tested as hydrogen sensors, confirming the reliability of this technology.

  6. Theory of single-spin inelastic tunneling spectroscopy.

    Science.gov (United States)

    Fernández-Rossier, J

    2009-06-26

    I show that recent experiments of inelastic scanning tunneling spectroscopy of single and a few magnetic atoms are modeled with a phenomenological spin-assisted tunneling Hamiltonian so that the inelastic dI/dV line shape is related to the spin spectral weight of the magnetic atom. This accounts for the spin selection rules and dI/dV spectra observed experimentally for single Fe and Mn atoms deposited on Cu2N. In the case of chains of Mn atoms it is found necessary to include both first and second-neighbor exchange interactions as well as single-ion anisotropy.

  7. Single n+-i-n+ InP nanowires for highly sensitive terahertz detection.

    Science.gov (United States)

    Peng, Kun; Parkinson, Patrick; Gao, Qian; Boland, Jessica L; Li, Ziyuan; Wang, Fan; Mokkapati, Sudha; Fu, Lan; Johnston, Michael B; Tan, Hark Hoe; Jagadish, Chennupati

    2017-03-24

    Developing single-nanowire terahertz (THz) electronics and employing them as sub-wavelength components for highly-integrated THz time-domain spectroscopy (THz-TDS) applications is a promising approach to achieve future low-cost, highly integrable and high-resolution THz tools, which are desirable in many areas spanning from security, industry, environmental monitoring and medical diagnostics to fundamental science. In this work, we present the design and growth of n + -i-n + InP nanowires. The axial doping profile of the n + -i-n + InP nanowires has been calibrated and characterized using combined optical and electrical approaches to achieve nanowire devices with low contact resistances, on which the highly-sensitive InP single-nanowire photoconductive THz detectors have been demonstrated. While the n + -i-n + InP nanowire detector has a only pA-level response current, it has a 2.5 times improved signal-to-noise ratio compared with the undoped InP nanowire detector and is comparable to traditional bulk THz detectors. This performance indicates a promising path to nanowire-based THz electronics for future commercial applications.

  8. Single-electron tunneling in double-barrier nanostructures

    International Nuclear Information System (INIS)

    Goldman, V.J.; Su, B.; Cunningham, J.E.

    1992-01-01

    In this paper, the authors review experimental study of charge transport in nanometer double-barrier resonant tunneling devices. Heterostructure material is asymmetric: one barrier is substantially less transparent than the other. Resonant tunneling through size-quantized well states and single-electron charging of the well are thus largely separated in the two bias polarities. When the emitter barrier is more transparent than the collector barrier, electrons accumulate in the well; incremental electron occupation of the well is accompanied by Coulomb blockade leading to sharp steps of the tunneling current. When the emitter barrier is less transparent, the current reflects resonant tunneling of just one electron at a time through size-quantized well states; the current peaks and/or steps (depending on experimental parameters) appear in current-voltage characteristics. Magnetic field and temperature effects are also reviewed. Good agreement is achieved in comparison of many features of experimental data with simple theoretical models

  9. CdS nanowires formed by chemical synthesis using conjugated single-stranded DNA molecules

    Science.gov (United States)

    Sarangi, S. N.; Sahu, S. N.; Nozaki, S.

    2018-03-01

    CdS nanowires were successfully grown by chemical synthesis using two conjugated single-stranded (ss) DNA molecules, poly G (30) and poly C (30), as templates. During the early stage of the synthesis with the DNA molecules, the Cd 2+ interacts with Poly G and Poly C and produces the (Cd 2+)-Poly GC complex. As the growth proceeds, it results in nanowires. The structural analysis by grazing angle x-ray diffraction and transmission electron microscopy confirmed the zinc-blende CdS nanowires with the growth direction of . Although the nanowires are well surface-passivated with the DNA molecules, the photoluminescence quenching was caused by the electron transfer from the nanowires to the DNA molecules. The quenching can be used to detect and label the DNAs.

  10. Synthesis of single crystalline CdS nanowires with polyethylene glycol 400 as inducing template

    Institute of Scientific and Technical Information of China (English)

    2006-01-01

    Solvothermal technique, an one-step soft solution-processing route was successfully employed to synthesize single crystalline CdS nanowires in ethylenediamine medium at lower temperature (170 □) for 1-8 d. In this route, polyethylene glycol 400 (PEG400)was used as surfactant, which played a crucial role in preferentially oriented growth of semiconductor nanowires. Characterizations of as-prepared CdS nanowires by X-ray powder diffraction(XRD), transmission electron microscopy(TEM) indicate that the naonowires,with typical diameters of 20nm and lengths up to several micrometers, have preferential [001] orientation. Also, investigations into the physical properties of the CdS nanowires were conducted with UV-Vis absorption spectroscopy and photoluminescence emission spectroscopy. The excitonic photo-optical phenomena of the nanowires shows the potential in the practical applications.

  11. Direct-write fabrication of a nanoscale digital logic element on a single nanowire

    International Nuclear Information System (INIS)

    Roy, Somenath; Gao Zhiqiang

    2010-01-01

    In this paper we report on the 'direct-write' fabrication and electrical characteristics of a nanoscale logic inverter, integrating enhancement-mode (E-mode) and depletion-mode (D-mode) field-effect transistors (FETs) on a single zinc oxide (ZnO) nanowire. 'Direct-writing' of platinum metal electrodes and a dielectric layer is executed on individual single-crystalline ZnO nanowires using either a focused electron beam (FEB) or a focused ion beam (FIB). We fabricate a top-gate FET structure, in which the gate electrode wraps around the ZnO nanowire, resulting in a more efficient gate response than the conventional back-gate nanowire transistors. For E-mode device operation, the gate electrode (platinum) is deposited directly onto the ZnO nanowire by a FEB, which creates a Schottky barrier and in turn a fully depleted channel. Conversely, sandwiching an insulating layer between the FIB-deposited gate electrode and the nanowire channel makes D-mode operation possible. Integrated E- and D-mode FETs on a single nanowire exhibit the characteristics of a direct-coupled FET logic (DCFL) inverter with a high gain and noise margin.

  12. Electrical control of single hole spins in nanowire quantum dots.

    Science.gov (United States)

    Pribiag, V S; Nadj-Perge, S; Frolov, S M; van den Berg, J W G; van Weperen, I; Plissard, S R; Bakkers, E P A M; Kouwenhoven, L P

    2013-03-01

    The development of viable quantum computation devices will require the ability to preserve the coherence of quantum bits (qubits). Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable challenge. Hole spins in III-V semiconductors have unique properties, such as a strong spin-orbit interaction and weak coupling to nuclear spins, and therefore, have the potential for enhanced spin control and longer coherence times. A weaker hyperfine interaction has previously been reported in self-assembled quantum dots using quantum optics techniques, but the development of hole-spin-based electronic devices in conventional III-V heterostructures has been limited by fabrication challenges. Here, we show that gate-tunable hole quantum dots can be formed in InSb nanowires and used to demonstrate Pauli spin blockade and electrical control of single hole spins. The devices are fully tunable between hole and electron quantum dots, which allows the hyperfine interaction strengths, g-factors and spin blockade anisotropies to be compared directly in the two regimes.

  13. Dopant induced single electron tunneling within the sub-bands of single silicon NW tri-gate junctionless n-MOSFET

    Science.gov (United States)

    Uddin, Wasi; Georgiev, Yordan M.; Maity, Sarmistha; Das, Samaresh

    2017-09-01

    We report 1D electron transport of silicon junctionless tri-gate n-type transistor at 4.2 K. The step like curve observed in the current voltage characteristic suggests 1D transport. Besides the current steps for 1D transport, we found multiple spikes within individual steps, which we relate to inter-band single electron tunneling, mediated by the charged dopants available in the channel region. Clear Coulomb diamonds were observed in the stability diagram of the device. It is shown that a uniformly doped silicon nanowire can provide us the window for the single electron tunnelling. Back-gate versus front-gate color plot, where current is in a color scale, shows a crossover of the increased conduction region. This is a clear indication of the dopant-dopant interaction. It has been shown that back-gate biasing can be used to tune the coupling strength between the dopants.

  14. Macroscopic quantum tunneling in Josephson tunnel junctions and Coulomb blockade in single small tunnel junctions

    International Nuclear Information System (INIS)

    Cleland, A.N.

    1991-01-01

    Experiments investigated the process of macroscopic quantum tunneling in a moderately-damped, resistively shunted, Josephson junction are described, followed by a discussion of experiments performed on very-small-capacitance normal-metal tunnel junctions. The experiments on the resistively-shunted Josephson junction were designed to investigate a quantum process, that of the tunneling of the Josephson-phase variable under a potential barrier, in a system in which dissipation plays a major role in the dynamics of motion. All the parameters of the junction were measured using the classical phenomena of thermal activation and resonant activation. Theoretical predictions are compared with the experimental results, showing good agreement with no adjustable parameters. The experiments on small-capacitance tunnel junctions extend the measurements on the large-area Josephson junctions from the region in which the phase variable has a fairly well-defined value, i.e. its wave function has a narrow width, to the region where its value is almost completely unknown. The charge on the junction becomes well-defined and is predicted to quantize the current through the junction, giving rise to the Coulomb blockade at low bias

  15. Tunable electronic transport properties of silicon-fullerene-linked nanowires: Semiconductor, conducting wire, and tunnel diode

    OpenAIRE

    Nishio, Kengo; Ozaki, Taisuke; Morishita, Tetsuya; Mikami, Masuhiro

    2010-01-01

    We explore the possibility of controllable tuning of the electronic transport properties of silicon-fullerene-linked nanowires by encapsulating guest atoms into their cages. Our first-principles calculations demonstrate that the guest-free nanowires are semiconductors, and do not conduct electricity. The iodine or sodium doping improves the transport properties, and makes the nanowires metallic. In the junctions of I-doped and Na-doped NWs, the current travels through the boundary by quantum ...

  16. A novel method for preparing vertically grown single-crystalline gold nanowires

    International Nuclear Information System (INIS)

    Tung, H-T; Nien, Y-T; Chen, I-G; Song, J-M

    2008-01-01

    A surfactant-free, template-less and seed-less method, namely the thermal-assisted photoreduction (TAP) process, has been developed to synthesize vertically grown Au nanowires (30-80 nm in diameter and about 2 μm in length) on the surface of thin film titanium dioxide (TiO 2 ), which is locally excited by blackbody radiation. The Au nanowires thus produced are single-crystalline with a preferred [11 bar 0] growth direction. The electrical behavior investigated using a nanomanipulation device indicates that the Au nanowires possess an excellent electrical resistivity of about 3.49 x 10 -8 Ω m.

  17. Spatial mapping of exciton lifetimes in single ZnO nanowires

    Directory of Open Access Journals (Sweden)

    J. S. Reparaz

    2013-07-01

    Full Text Available We investigate the spatial dependence of the exciton lifetimes in single ZnO nanowires. We have found that the free exciton and bound exciton lifetimes exhibit a maximum at the center of nanowires, while they decrease by 30% towards the tips. This dependence is explained by considering the cavity-like properties of the nanowires in combination with the Purcell effect. We show that the lifetime of the bound-excitons scales with the localization energy to the power of 3/2, which validates the model of Rashba and Gurgenishvili at the nanoscale.

  18. Simulation of single-electron tunnelling circuits using SPICE

    NARCIS (Netherlands)

    Van de Haar, R.

    2004-01-01

    Single-electron tunnelling (SET) devices have very promising properties, like their extremely low power consumption, their extremely high switching speeds and their extremely small physical dimensions. Since the field of SET devices is far from being fully exploited, and their device properties seem

  19. Electromigration of single metal atoms observed by scanning tunneling microscopy

    NARCIS (Netherlands)

    Braun, K.-F.; Soe, W.H.; Flipse, C.F.J.

    2007-01-01

    The authors show in this letter that single metal atoms on a Ni(111) surface can be pushed by electromigration forces from a scanning tunneling microscope tip. This repulsive interaction is obsd. over a length scale of 6 nm. While for voltages above -300 mV the atoms are pulled by the microscope

  20. Subelectron transport in single-electron-tunneling arrays

    Science.gov (United States)

    Kaplan, Daniel M.; Sverdlov, Victor A.; Likharev, Konstantin K.

    2002-05-01

    We have shown that a special distribution of background charges in islands of single-electron-tunneling arrays can completely suppress its Coulomb blockade and at the same time reduce substantially its shot noise at low applied voltages. In particular the Fano factor F can approach the minimum value Fmin=1/Nopalescence.

  1. The photonic nanowire: A highly efficient single-photon source

    DEFF Research Database (Denmark)

    Gregersen, Niels

    2014-01-01

    The photonic nanowire represents an attractive platform for a quantum light emitter. However, careful optical engineering using the modal method, which elegantly allows access to all relevant physical parameters, is crucial to ensure high efficiency.......The photonic nanowire represents an attractive platform for a quantum light emitter. However, careful optical engineering using the modal method, which elegantly allows access to all relevant physical parameters, is crucial to ensure high efficiency....

  2. Metal-Catalyst-Free Synthesis and Characterization of Single-Crystalline Silicon Oxynitride Nanowires

    Directory of Open Access Journals (Sweden)

    Shuang Xi

    2012-01-01

    Full Text Available Large quantities of single-crystal silicon oxynitride nanowires with high N concentration have been synthesized directly on silicon substrate at 1200°C without using any metal catalyst. The diameter of these ternary nanowires is ranging from 10 to 180 nm with log-normal distribution, and the length of these nanowires varies from a few hundreds of micrometers to several millimeters. A vapor-solid mechanism was proposed to explain the growth of the nanowires. These nanowires are grown to form a disordered mat with an ultrabright white nonspecular appearance. The mat demonstrates highly diffusive reflectivity with the optical reflectivity of around 80% over the whole visible wavelength, which is comparable to the most brilliant white beetle scales found in nature. The whiteness might be resulted from the strong multiscattering of a large fraction of incident light on the disordered nanowire mat. These ultra-bright white nanowires could form as reflecting surface to meet the stringent requirements of bright-white light-emitting-diode lighting for higher optical efficiency. They can also find applications in diverse fields such as sensors, cosmetics, paints, and tooth whitening.

  3. A new technique of single portal endoscopic carpal tunnel release.

    Science.gov (United States)

    Ip, Wing-Yuk Josephine; Sweed, Tamer Ahmed; Fung, Kwok Keung Boris; Tipoe, George L; Pun, Tze Shing

    2012-03-01

    Since the first description of endoscopic carpal tunnel release (ECTR) in 1987 by Okutsu many endoscopic techniques have been developed, but the majority of the literature on ECTR has dealt with the Chow and Agee techniques. ECTR is indicated for carpal tunnel syndrome that is not responding to conservative treatment for 6 months. This new technique of ECTR is a single-portal technique using instruments originally designed for endoscopic cubital tunnel release, with no disposable instruments used. It also has the advantage of performing the release with the median nerve protected under direct vision. Ten cases were operated with this technique after performing the procedure on 8 hands of 4 fresh frozen cadavers. There were no neurovascular or tendon injuries with this technique and patients were satisfied with the results.

  4. Polarized and resonant Raman spectroscopy on single InAs nanowires

    Science.gov (United States)

    Möller, M.; de Lima, M. M., Jr.; Cantarero, A.; Dacal, L. C. O.; Madureira, J. R.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.

    2011-08-01

    We report polarized Raman scattering and resonant Raman scattering studies on single InAs nanowires. Polarized Raman experiments show that the highest scattering intensity is obtained when both the incident and analyzed light polarizations are perpendicular to the nanowire axis. InAs wurtzite optical modes are observed. The obtained wurtzite modes are consistent with the selection rules and also with the results of calculations using an extended rigid-ion model. Additional resonant Raman scattering experiments reveal a redshifted E1 transition for InAs nanowires compared to the bulk zinc-blende InAs transition due to the dominance of the wurtzite phase in the nanowires. Ab initio calculations of the electronic band structure for wurtzite and zinc-blende InAs phases corroborate the observed values for the E1 transitions.

  5. Single-crystalline self-branched anatase titania nanowires for dye-sensitized solar cells

    Science.gov (United States)

    Li, Zhenquan; Yang, Huang; Wu, Fei; Fu, Jianxun; Wang, Linjun; Yang, Weiguang

    2017-03-01

    The morphology of the anatase titania plays an important role in improving the photovoltaic performance in dye-sensitized solar cells. In this work, single-crystalline self-branched anatase TiO2 nanowires have been synthesized by hydrothermal method using TBAH and CTAB as morphology controlling agents. The obtained self-branched TiO2 nanowires dominated by a large percentage of (010) facets. The photovoltaic conversion efficiency (6.37%) of dye-sensitized solar cell (DSSC) based on the self-branched TiO2 nanowires shows a significant improvement (26.6%) compared to that of P25 TiO2 (5.03%). The enhanced performance of the self-branched TiO2 nanowires-based DSSC is due to heir large percent of exposed (010) facets which have strong dye adsorption capacity and effective charge transport of the self-branched 1D nanostructures.

  6. Bipolar resistive switching of single gold-in-Ga2O3 nanowire.

    Science.gov (United States)

    Hsu, Chia-Wei; Chou, Li-Jen

    2012-08-08

    We have fabricated single nanowire chips on gold-in-Ga(2)O(3) core-shell nanowires using the electron-beam lithography techniques and realized bipolar resistive switching characteristics having invariable set and reset voltages. We attribute the unique property of invariance to the built-in conduction path of gold core. This invariance allows us to fabricate many resistive switching cells with the same operating voltage by simple depositing repetitive metal electrodes along a single nanowire. Other characteristics of these core-shell resistive switching nanowires include comparable driving electric field with other thin film and nanowire devices and a remarkable on/off ratio more than 3 orders of magnitude at a low driving voltage of 2 V. A smaller but still impressive on/off ratio of 10 can be obtained at an even lower bias of 0.2 V. These characteristics of gold-in-Ga(2)O(3) core-shell nanowires make fabrication of future high-density resistive memory devices possible.

  7. Capillarity creates single-crystal calcite nanowires from amorphous calcium carbonate.

    Science.gov (United States)

    Kim, Yi-Yeoun; Hetherington, Nicola B J; Noel, Elizabeth H; Kröger, Roland; Charnock, John M; Christenson, Hugo K; Meldrum, Fiona C

    2011-12-23

    Single-crystal calcite nanowires are formed by crystallization of morphologically equivalent amorphous calcium carbonate (ACC) particles within the pores of track etch membranes. The polyaspartic acid stabilized ACC is drawn into the membrane pores by capillary action, and the single-crystal nature of the nanowires is attributed to the limited contact of the intramembrane ACC particle with the bulk solution. The reaction environment then supports transformation to a single-crystal product. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Direct observation of single-charge-detection capability of nanowire field-effect transistors.

    Science.gov (United States)

    Salfi, J; Savelyev, I G; Blumin, M; Nair, S V; Ruda, H E

    2010-10-01

    A single localized charge can quench the luminescence of a semiconductor nanowire, but relatively little is known about the effect of single charges on the conductance of the nanowire. In one-dimensional nanostructures embedded in a material with a low dielectric permittivity, the Coulomb interaction and excitonic binding energy are much larger than the corresponding values when embedded in a material with the same dielectric permittivity. The stronger Coulomb interaction is also predicted to limit the carrier mobility in nanowires. Here, we experimentally isolate and study the effect of individual localized electrons on carrier transport in InAs nanowire field-effect transistors, and extract the equivalent charge sensitivity. In the low carrier density regime, the electrostatic potential produced by one electron can create an insulating weak link in an otherwise conducting nanowire field-effect transistor, modulating its conductance by as much as 4,200% at 31 K. The equivalent charge sensitivity, 4 × 10(-5) e Hz(-1/2) at 25 K and 6 × 10(-5) e Hz(-1/2) at 198 K, is orders of magnitude better than conventional field-effect transistors and nanoelectromechanical systems, and is just a factor of 20-30 away from the record sensitivity for state-of-the-art single-electron transistors operating below 4 K (ref. 8). This work demonstrates the feasibility of nanowire-based single-electron memories and illustrates a physical process of potential relevance for high performance chemical sensors. The charge-state-detection capability we demonstrate also makes the nanowire field-effect transistor a promising host system for impurities (which may be introduced intentionally or unintentionally) with potentially long spin lifetimes, because such transistors offer more sensitive spin-to-charge conversion readout than schemes based on conventional field-effect transistors.

  9. Evaluation of magnetic flux distribution from magnetic domains in [Co/Pd] nanowires by magnetic domain scope method using contact-scanning of tunneling magnetoresistive sensor

    Energy Technology Data Exchange (ETDEWEB)

    Okuda, Mitsunobu, E-mail: okuda.m-ky@nhk.or.jp; Miyamoto, Yasuyoshi; Miyashita, Eiichi; Hayashi, Naoto [NHK Science and Technology Research Laboratories, 1-10-11 Kinuta Setagaya, Tokyo 157-8510 (Japan)

    2014-05-07

    Current-driven magnetic domain wall motions in magnetic nanowires have attracted great interests for physical studies and engineering applications. The magnetic force microscope (MFM) is widely used for indirect verification of domain locations in nanowires, where relative magnetic force between the local domains and the MFM probe is used for detection. However, there is an occasional problem that the magnetic moments of MFM probe influenced and/or rotated the magnetic states in the low-moment nanowires. To solve this issue, the “magnetic domain scope for wide area with nano-order resolution (nano-MDS)” method has been proposed recently that could detect the magnetic flux distribution from the specimen directly by scanning of tunneling magnetoresistive field sensor. In this study, magnetic domain structure in nanowires was investigated by both MFM and nano-MDS, and the leakage magnetic flux density from the nanowires was measured quantitatively by nano-MDS. Specimen nanowires consisted from [Co (0.3)/Pd (1.2)]{sub 21}/Ru(3) films (units in nm) with perpendicular magnetic anisotropy were fabricated onto Si substrates by dual ion beam sputtering and e-beam lithography. The length and the width of the fabricated nanowires are 20 μm and 150 nm. We have succeeded to obtain not only the remanent domain images with the detection of up and down magnetizations as similar as those by MFM but also magnetic flux density distribution from nanowires directly by nano-MDS. The obtained value of maximum leakage magnetic flux by nano-MDS is in good agreement with that of coercivity by magneto-optical Kerr effect microscopy. By changing the protective diamond-like-carbon film thickness on tunneling magnetoresistive sensor, the three-dimensional spatial distribution of leakage magnetic flux could be evaluated.

  10. Optical properties of single semiconductor nanowires and nanowire ensembles. Probing surface physics by photoluminescence spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Pfueller, Carsten

    2011-06-27

    This thesis presents a detailed investigation of the optical properties of semiconductor nanowires (NWs) in general and single GaN NWs and GaN NW ensembles in particular by photoluminescence (PL) spectroscopy. NWs are often considered as potential building blocks for future nanometer-scaled devices. This vision is based on several attractive features that are generally ascribed to NWs. For instance, they are expected to grow virtually free of strain and defects even on substrates with a large structural mismatch. In the first part of the thesis, some of these expectations are examined using semiconductor NWs of different materials. On the basis of the temperature-dependent PL of Au- and selfassisted GaAs/(Al,Ga)As core-shell NWs, the influence of foreign catalyst particles on the optical properties of NWs is investigated. For the Au-assisted NWs, we find a thermally activated, nonradiative recombination channel, possibly related to Auatoms incorporated from the catalyst. These results indicate the limited suitability of catalyst-assisted NWs for optoelectronic applications. The effect of the substrate choice is studied by comparing the PL of ZnO NWs grown on Si, Al{sub 2}O{sub 3}, and ZnO substrates. Their virtually identical optical characteristics indicate that the synthesis of NWs may indeed overcome the constraints that limit the heteroepitaxial deposition of thin films. The major part of this thesis discusses the optical properties of GaN NWs grown on Si substrates. The investigation of the PL of single GaN NWs and GaN NW ensembles reveals the significance of their large surface-to-volume ratio. Differences in the recombination behavior of GaNNW ensembles and GaN layers are observed. First, the large surface-to-volume ratio is discussed to be responsible for the different recombination mechanisms apparent in NWs. Second, certain optical features are only found in the PL of GaN NWs, but not in that of GaN layers. An unexpected broadening of the donor

  11. Synthesis and characterization of single-crystalline zinc tin oxide nanowires

    Science.gov (United States)

    Shi, Jen-Bin; Wu, Po-Feng; Lin, Hsien-Sheng; Lin, Ya-Ting; Lee, Hsuan-Wei; Kao, Chia-Tze; Liao, Wei-Hsiang; Young, San-Lin

    2014-05-01

    Crystalline zinc tin oxide (ZTO; zinc oxide with heavy tin doping of 33 at.%) nanowires were first synthesized using the electrodeposition and heat treatment method based on an anodic aluminum oxide (AAO) membrane, which has an average diameter of about 60 nm. According to the field emission scanning electron microscopy (FE-SEM) results, the synthesized ZTO nanowires are highly ordered and have high wire packing densities. The length of ZTO nanowires is about 4 μm, and the aspect ratio is around 67. ZTO nanowires with a Zn/(Zn + Sn) atomic ratio of 0.67 (approximately 2/3) were observed from an energy dispersive spectrometer (EDS). X-ray diffraction (XRD) and corresponding selected area electron diffraction (SAED) patterns demonstrated that the ZTO nanowire is hexagonal single-crystalline. The study of ultraviolet/visible/near-infrared (UV/Vis/NIR) absorption showed that the ZTO nanowire is a wide-band semiconductor with a band gap energy of 3.7 eV.

  12. Fabrication and characterization of single segment CoNiP and multisegment CoNiP/Au nanowires

    International Nuclear Information System (INIS)

    Luu Van Thiem; Le Tuan Tu

    2014-01-01

    This paper presents the fabrication of CoNiP single segment and CoNiP/Au multisegment nanowires. We have fabricated these nanowires by electrodeposition method into polycarbonate templates with a nominal pore diameter about 100 nm. The hysteresis loops were measured with the applied magnetic field parallel and perpendicular to the wire axis using a vibrating sample magnetometer (VSM). The structure morphology was observed by Scanning Electron Microscopy (SEM) and the element composition of CoNiP/Au multisegment nanowires were analyzed by EDS. The results show that nanowires are very uniform with the diameter of 100 nm. The observed coercivity (H C ) and squareness (Mr/Ms) of CoNiP single segment nanowires are larger than the CoNiP/Au multisegment nanowires. (author)

  13. Single Nucleobase Identification Using Biophysical Signatures from Nanoelectronic Quantum Tunneling.

    Science.gov (United States)

    Korshoj, Lee E; Afsari, Sepideh; Khan, Sajida; Chatterjee, Anushree; Nagpal, Prashant

    2017-03-01

    Nanoelectronic DNA sequencing can provide an important alternative to sequencing-by-synthesis by reducing sample preparation time, cost, and complexity as a high-throughput next-generation technique with accurate single-molecule identification. However, sample noise and signature overlap continue to prevent high-resolution and accurate sequencing results. Probing the molecular orbitals of chemically distinct DNA nucleobases offers a path for facile sequence identification, but molecular entropy (from nucleotide conformations) makes such identification difficult when relying only on the energies of lowest-unoccupied and highest-occupied molecular orbitals (LUMO and HOMO). Here, nine biophysical parameters are developed to better characterize molecular orbitals of individual nucleobases, intended for single-molecule DNA sequencing using quantum tunneling of charges. For this analysis, theoretical models for quantum tunneling are combined with transition voltage spectroscopy to obtain measurable parameters unique to the molecule within an electronic junction. Scanning tunneling spectroscopy is then used to measure these nine biophysical parameters for DNA nucleotides, and a modified machine learning algorithm identified nucleobases. The new parameters significantly improve base calling over merely using LUMO and HOMO frontier orbital energies. Furthermore, high accuracies for identifying DNA nucleobases were observed at different pH conditions. These results have significant implications for developing a robust and accurate high-throughput nanoelectronic DNA sequencing technique. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  14. Study of carrier concentration in single InP nanowires by luminescence and Hall measurements

    International Nuclear Information System (INIS)

    Lindgren, David; Hultin, Olof; Heurlin, Magnus; Storm, Kristian; Borgström, Magnus T; Samuelson, Lars; Gustafsson, Anders

    2015-01-01

    The free electron carrier concentrations in single InP core–shell nanowires are determined by micro-photoluminescence, cathodoluminescence (CL) and Hall effect measurements. The results from luminescence measurements were obtained by solving the Fermi–Dirac integral, as well as by analyzing the peak full width at half maximum (FWHM). Furthermore, the platform used for Hall effect measurements, combined with spot mode CL spectroscopy, is used to determine the carrier concentrations at specific positions along single nanowires. The results obtained via luminescence measurements provide an accurate and rapid feedback technique for the epitaxial development of doping incorporation in nanowires. The technique has been employed on several series of samples in which growth parameters, such as V/III-ratio, temperature and dopant flows, were investigated in an optimization procedure. The correlation between the Hall effect and luminescence measurements for extracting the carrier concentration of different samples were in excellent agreement. (paper)

  15. A simple route to the synthesis of single crystalline copper metagermanate nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Pei, L.Z., E-mail: lzpei@ahut.edu.cn [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Zhao, H.S. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Tan, W. [Henkel Huawei Electronics Co. Ltd., Lian' yungang, Jiangsu 222006 (China); Yu, H.Y. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China); Chen, Y.W. [Department of Materials Science, Fudan University, Shanghai 200433 (China); Zhang Qianfeng; Fan, C.G. [School of Materials Science and Engineering, Institute of Molecular Engineering and Applied Chemistry, Key Lab of Materials Science and Processing of Anhui Province, Anhui University of Technology, Ma' anshan, Anhui 243002 (China)

    2009-12-15

    Single crystalline copper metagermanate (CuGeO{sub 3}) nanowires with the diameter of 30-300 nm and length of longer than 100 {mu}m have been prepared by a simple hydrothermal deposition route. X-ray diffraction (XRD), selected area electron diffraction (SAED), high-resolution transmission electron microscopy (HRTEM) and Raman analyses confirm that the nanowires are orthorhombic single crystals with a main growth direction along <101>. Room temperature photoluminescence (PL) measurement shows a strong blue emission peak at 442 nm with a broad emission band. The blue emission may be ascribed to radiative recombination of oxygen vacancies and oxygen-germanium vacancies. The formation process of CuGeO{sub 3} nanowires is also discussed.

  16. Low-temperature phonoemissive tunneling rates in single molecule magnets

    Science.gov (United States)

    Liu, Yun; Garg, Anupam

    2016-03-01

    Tunneling between the two lowest energy levels of single molecule magnets with Ising type anisotropy, accompanied by the emission or absorption of phonons, is considered. Quantitatively accurate calculations of the rates for such tunneling are performed for a model Hamiltonian especially relevant to the best studied example, Fe8. Two different methods are used: high-order perturbation theory in the spin-phonon interaction and the non-Ising-symmetric parts of the spin Hamiltonian, and a novel semiclassical approach based on spin-coherent-state-path-integral instantons. The methods are found to be in good quantitative agreement with other, and consistent with previous approaches to the problem. The implications of these results for magnetization of molecular solids of these molecules are discussed briefly.

  17. Downsizing of single crystalline high aspect ratio tungsten nanowires

    International Nuclear Information System (INIS)

    Milenkovic, Srdjan; Drensler, Stefanie; Hassel, Achim Walter

    2015-01-01

    Directional solidification of eutectic NiAl-W alloys offers an intuitive method to produce tungsten nanowires. Through the use of two different methods, the well-established Bridgman method and a newer type floating zone method, the direct influence of process parameters, like the withdrawal rate and the temperature gradient, onto the sample microstructure were studied. The sharp temperature gradient, built up using a four mirror system focusing the light emitted by halogen lamps inside the optical floating zone furnace allows producing nanowires with a diameter as small as 75 nm. Differences in the solid/liquid interface morphology depending on the solidification method used are discussed. (copyright 2015 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  18. Chiral transformation: From single nanowire to double helix

    KAUST Repository

    Wang, Yong

    2011-12-21

    We report a new type of water-soluble ultrathin Au-Ag alloy nanowire (NW), which exhibits unprecedented behavior in a colloidal solution. Upon growth of a thin metal (Pd, Pt, or Au) layer, the NW winds around itself to give a metallic double helix. We propose that the winding originates from the chirality within the as-synthesized Au-Ag NWs, which were induced to untwist upon metal deposition. © 2011 American Chemical Society.

  19. Spin-controlled nanomechanics induced by single-electron tunneling.

    Science.gov (United States)

    Radić, D; Nordenfelt, A; Kadigrobov, A M; Shekhter, R I; Jonson, M; Gorelik, L Y

    2011-12-02

    We consider dc-electronic transport through a nanowire suspended between normal- and spin-polarized metal leads in the presence of an external magnetic field. We show that magnetomotive coupling between the electrical current through the nanowire and vibrations of the wire may result in self-excitation of mechanical vibrations. The self-excitation mechanism is based on correlations between the occupancy of the quantized electronic energy levels inside the nanowire and the velocity of the nanowire. We derive conditions for the occurrence of the instability and find stable regimes of mechanical oscillations. © 2011 American Physical Society

  20. Molecular tips for scanning tunneling microscopy: intermolecular electron tunneling for single-molecule recognition and electronics.

    Science.gov (United States)

    Nishino, Tomoaki

    2014-01-01

    This paper reviews the development of molecular tips for scanning tunneling microscopy (STM). Molecular tips offer many advantages: first is their ability to perform chemically selective imaging because of chemical interactions between the sample and the molecular tip, thus improving a major drawback of conventional STM. Rational design of the molecular tip allows sophisticated chemical recognition; e.g., chiral recognition and selective visualization of atomic defects in carbon nanotubes. Another advantage is that they provide a unique method to quantify electron transfer between single molecules. Understanding such electron transfer is mandatory for the realization of molecular electronics.

  1. Recent Advances for High-Efficiency Sources of Single Photons Based on Photonic Nanowires

    DEFF Research Database (Denmark)

    Gerard, J. M.; Claudon, J.; Munsch, M.

    2012-01-01

    Photonic nanowires have recently been used to tailor the spontaneous emission of embedded quantum dots, and to develop record efficiency single-photon sources. We will present recent developments in this field mainly 1) the observation of a strong inhibition of the spontaneous emission of quantum...

  2. Strain distribution in single, suspended germanium nanowires studied using nanofocused x-rays

    DEFF Research Database (Denmark)

    Keplinger, Mario; Grifone, Raphael; Greil, Johannes

    2016-01-01

    Within the quest for direct band-gap group IV materials, strain engineering in germanium is one promising route. We present a study of the strain distribution in single, suspended germanium nanowires using nanofocused synchrotron radiation. Evaluating the probed Bragg reflection for different ill...

  3. Room temperature strong coupling effects from single ZnO nanowire microcavity

    KAUST Repository

    Das, Ayan; Heo, Junseok; Bayraktaroglu, Adrian; Guo, Wei; Ng, Tien Khee; Phillips, Jamie; Ooi, Boon S.; Bhattacharya, Pallab

    2012-01-01

    Strong coupling effects in a dielectric microcavity with a single ZnO nanowire embedded in it have been investigated at room temperature. A large Rabi splitting of ?100 meV is obtained from the polariton dispersion and a non

  4. Controlling light emission from single-photon sources using photonic nanowires

    DEFF Research Database (Denmark)

    Gregersen, Niels; Chen, Yuntian; Mørk, Jesper

    2012-01-01

    The photonic nanowire has recently emerged as an promising alternative to microcavity-based single-photon source designs. In this simple structure, a geometrical effect ensures a strong coupling between an embedded emitter and the optical mode of interest and a combination of tapers and mirrors a...

  5. Low-frequency noise characterization of single CuO nanowire gas sensor devices

    NARCIS (Netherlands)

    Steinhauer, S.; Köck, A.; Gspan, C.; Grogger, W.; Vandamme, L.K.J.; Pogany, D.

    2015-01-01

    Low-frequency noise properties of single CuO nanowire devices were investigated under gas sensor operation conditions in dry and humid synthetic air at 350¿°C. A 1/f noise spectrum was found with the normalized power spectral density of current fluctuations typically a factor of 2 higher for humid

  6. Microfiber-coupled superconducting nanowire single-photon detector for near-infrared wavelengths.

    Science.gov (United States)

    You, Lixing; Wu, Junjie; Xu, Yingxin; Hou, Xintong; Fang, Wei; Li, Hao; Zhang, Weijun; Zhang, Lu; Liu, Xiaoyu; Tong, Limin; Wang, Zhen; Xie, Xiaoming

    2017-12-11

    High-performance superconducting nanowire single-photon detectors (SNSPDs) have facilitated numerous experiments and applications, particularly in the fields of modern quantum optics and quantum communication. Two kinds of optical coupling methods have thus far been developed for SNSPDs: one produces standard fiber-coupled SNSPDs in which the fibers vertically illuminate the meandered nanowires; the other produces waveguide-coupled SNSPDs in which nanowires are fabricated on the surface of a waveguide that guides photons, and the fibers are coupled to the waveguide. In this paper, we report on first experimental demonstration of a new type of SNSPD that is coupled with a microfiber (MF). Photons are guided by the MF and are evanescently absorbed by the nanowires of the SNSPD when the MF is placed on top of superconducting NbN nanowires. Room-temperature optical experiments indicated that this device has a coupling efficiency of up to 90% when a 1.3 μm-diameter MF is used for light with wavelength of 1550 nm. We were also able to demonstrate that our MF-coupled detector achieved system detection efficiencies of 50% and 20% at incident wavelengths of 1064 and 1550 nm, respectively, for a 2 μm-diameter MF at 2.2K. We expect that MF-coupled SNSPDs may show both high efficiency and broadband characteristics upon optimization and will be used for various novel applications, such as micro/nano-fiber optics.

  7. Tunneling anisotropic magnetoresistance in single-molecule magnet junctions

    Science.gov (United States)

    Xie, Haiqing; Wang, Qiang; Jiao, Hujun; Liang, J.-Q.

    2012-08-01

    We theoretically investigate quantum transport through single-molecule magnet (SMM) junctions with ferromagnetic and normal-metal leads in the sequential regime. The current obtained by means of the rate-equation gives rise to the tunneling anisotropic magnetoresistance (TAMR), which varies with the angle between the magnetization direction of ferromagnetic lead and the easy axis of SMM. The angular dependence of TAMR can serve as a probe to determine experimentally the easy axis of SMM. Moreover, it is demonstrated that both the magnitude and the sign of TAMR are tunable by the bias voltage, suggesting a new spin-valve device with only one magnetic electrode in molecular spintronics.

  8. Light-gated single CdSe nanowire transistor: photocurrent saturation and band gap extraction

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yang, E-mail: yangzh08@gmail.com; Chakraborty, Ritun; Kudera, Stefan; Krahne, Roman, E-mail: roman.krahne@iit.it [Istituto Italiano di Tecnologia, Nanochemistry department (Italy)

    2015-11-15

    CdSe nanowires are popular building blocks for many optoelectronic devices mainly owing to their direct band gap in the visible range of the spectrum. Here we investigate the optoelectronic properties of single CdSe nanowires fabricated by colloidal synthesis, in terms of their photocurrent–voltage characteristics and photoconductivity spectra recorded at 300 and 18 K. The photocurrent is identified as the secondary photocurrent, which gives rise to a photoconductive gain of ∼35. We observe a saturation of the photocurrent beyond a certain voltage bias that can be related to the finite drift velocity of electrons. From the photoconductivity spectra, we determine the band gap energy of the nanowires as ∼1.728 eV, and we resolve low-energy peaks that can be associated with sub-bandgap states.Graphical Abstract.

  9. Anomalous magnetic properties of 7 nm single-crystal Co3O4 nanowires

    Science.gov (United States)

    Lv, Ping; Zhang, Yan; Xu, Rui; Nie, Jia-Cai; He, Lin

    2012-01-01

    We present a study of magnetic properties of single-crystal Co3O4 nanowires with diameter about 7 nm. The nanowires expose (111) planes composed of plenty of Co3+ cations and exhibit two order temperatures at 56 K (TN of wire cores) and 73 K (order temperature of wire shells), which are far above TN = 40 K of bulk Co3O4. This novel behavior is attributed to symmetry breaking of surface Co3+ cations and magnetic proximity effect. The nanowire shells show macroscopic residual magnetic moments. Cooling in a magnetic field, a fraction of the residual moments are tightly pinned to the antiferromagnetic lattice, which results in an obvious horizontal and vertical shift of hysteresis loop. Our experiment demonstrates that the exchange bias field HE and the pinned magnetic moments Mpin follow a simple expression HE = aMpin with a a constant.

  10. Weak antilocalization and conductance fluctuation in a single crystalline Bi nanowire

    International Nuclear Information System (INIS)

    Kim, Jeongmin; Lee, Seunghyun; Kim, MinGin; Lee, Wooyoung; Brovman, Yuri M.; Kim, Philip

    2014-01-01

    We present the low temperature transport properties of an individual single-crystalline Bi nanowire grown by the on-film formation of nanowire method. The temperature dependent resistance and magnetoresistance of Bi nanowires were investigated. The phase coherence length was obtained from the fluctuation pattern of the magnetoresistance below 40 K using universal conductance fluctuation theory. The obtained temperature dependence of phase coherence length and the fluctuation amplitude indicates that the transport of electrons shows 2-dimensional characteristics originating from the surface states. The temperature dependence of the coherence length derived from the weak antilocalization effect using the Hikami–Larkin–Nagaoka model is consistent with that from the universal conductance fluctuations theory

  11. Photovoltaic device on a single ZnO nanowire p–n homojunction

    International Nuclear Information System (INIS)

    Cho, Hak Dong; Zakirov, Anvar S; Yuldashev, Shavkat U; Kang, Tae Won; Ahn, Chi Won; Yeo, Yung Kee

    2012-01-01

    A photovoltaic device was successfully grown solely based on the single ZnO p–n homojunction nanowire. The ZnO nanowire p–n diode consists of an as-grown n-type segment and an in situ arsenic-doped p-type segment. This p–n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased conditions. Our results demonstrate that the present ZnO p–n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nanoscale electronic, optoelectronic and medical devices. (paper)

  12. Homojunction p-n photodiodes based on As-doped single ZnO nanowire

    International Nuclear Information System (INIS)

    Cho, H. D.; Zakirov, A. S.; Yuldashev, Sh. U.; Kang, T. W.; Ahn, C. W.; Yeo, Y. K.

    2013-01-01

    Photovoltaic device was successfully grown solely based on the single ZnO p-n homojunction nanowire. The ZnO nanowire p-n diode consists of an as-grown n-type segment and an in-situ arsenic doped p-type segment. This p-n homojunction acts as a good photovoltaic cell, producing a photocurrent almost 45 times larger than the dark current under reverse-biased condition. Our results demonstrate that present ZnO p-n homojunction nanowire can be used as a self-powered ultraviolet photodetector as well as a photovoltaic cell, which can also be used as an ultralow electrical power source for nano-scale electronic, optoelectronic, and medical devices

  13. Interfering Heralded Single Photons from Two Separate Silicon Nanowires Pumped at Different Wavelengths

    Directory of Open Access Journals (Sweden)

    Xiang Zhang

    2016-08-01

    Full Text Available Practical quantum photonic applications require on-demand single photon sources. As one possible solution, active temporal and wavelength multiplexing has been proposed to build an on-demand single photon source. In this scheme, heralded single photons are generated from different pump wavelengths in many temporal modes. However, the indistinguishability of these heralded single photons has not yet been experimentally confirmed. In this work, we achieve 88% ± 8% Hong–Ou–Mandel quantum interference visibility from heralded single photons generated from two separate silicon nanowires pumped at different wavelengths. This demonstrates that active temporal and wavelength multiplexing could generate indistinguishable heralded single photons.

  14. Spatial variation in carrier dynamics along a single CdSSe nanowire

    International Nuclear Information System (INIS)

    Blake, Jolie C.; Eldridge, Peter S.; Gundlach, Lars

    2014-01-01

    Highlights: • Femtosecond Kerr-gate microscopy allows ultrafast fluorescence measurements along different positions of a single nanowire. • Amplified spontaneous emission observed at high fluences can be used to calculate recombination rates. • Observation of ASE at different locations along a single CdSSe nanowire provides the ability to extract defect densities. - Abstract: Ultrafast charge carrier dynamics along individual CdS x Se 1−x nanowires has been measured. The use of an improved ultrafast Kerr-gated microscope allows for spatially resolved luminescence measurements along a single nanowire. Amplified spontaneous emission (ASE) was observed at high excitation fluences. Position dependent variations of ultrafast ASE dynamics were observed. SEM and colorimetric measurements showed that the difference in dynamics can be attributed to variations in non-radiative recombination rates along the wire. The dominant Shockley-Read recombination rate can be extracted from ASE dynamics and can be directly related to charge carrier mobility and defect density. Employing ASE as a probe for defect densities provides a new sub-micron spatially resolved, contactless method for measurements of charge carrier mobility

  15. Influence of material and geometry on the performance of superconducting nanowire single-photon detectors

    CERN Document Server

    Henrich, Dagmar

    2013-01-01

    Superconducting Nanowire Single-Photon Detectors offer the capability to detect electromagnetic waves on a single photon level in a wavelength range that far exceeds that of alternative detector types. However, above a certain threshold wavelength, the efficiency of those detectors decreases stronlgy, leading to a poor performance in the far-infrared range. Influences on this threshold are studied and approaches for improvement are verified experimentally by measurement of the device performance.

  16. Single-crystal apatite nanowires sheathed in graphitic shells: synthesis, characterization, and application.

    Science.gov (United States)

    Jeong, Namjo; Cha, Misun; Park, Yun Chang; Lee, Kyung Mee; Lee, Jae Hyup; Park, Byong Chon; Lee, Junghoon

    2013-07-23

    Vertically aligned one-dimensional hybrid structures, which are composed of apatite and graphitic structures, can be beneficial for orthopedic applications. However, they are difficult to generate using the current method. Here, we report the first synthesis of a single-crystal apatite nanowire encapsulated in graphitic shells by a one-step chemical vapor deposition. Incipient nucleation of apatite and its subsequent transformation to an oriented crystal are directed by derived gaseous phosphorine. Longitudinal growth of the oriented apatite crystal is achieved by a vapor-solid growth mechanism, whereas lateral growth is suppressed by the graphitic layers formed through arrangement of the derived aromatic hydrocarbon molecules. We show that this unusual combination of the apatite crystal and the graphitic shells can lead to an excellent osteogenic differentiation and bony fusion through a programmed smart behavior. For instance, the graphitic shells are degraded after the initial cell growth promoted by the graphitic nanostructures, and the cells continue proliferation on the bare apatite nanowires. Furthermore, a bending experiment indicates that such core-shell nanowires exhibited a superior bending stiffness compared to single-crystal apatite nanowires without graphitic shells. The results suggest a new strategy and direction for bone grafting materials with a highly controllable morphology and material conditions that can best stimulate bone cell differentiation and growth.

  17. Fluctuation mechanisms in superconductors nanowire single-photon counters, enabled by effective top-down manufacturing

    CERN Document Server

    Bartolf, Holger

    2016-01-01

    Holger Bartolf discusses state-of-the-art detection concepts based on superconducting nanotechnology as well as sophisticated analytical formulæ that model dissipative fluctuation-phenomena in superconducting nanowire single-photon detectors. Such knowledge is desirable for the development of advanced devices which are designed to possess an intrinsic robustness against vortex-fluctuations and it provides the perspective for honorable fundamental science in condensed matter physics. Especially the nanowire detector allows for ultra-low noise detection of signals with single-photon sensitivity and GHz repetition rates. Such devices have a huge potential for future technological impact and might enable unique applications (e.g. high rate interplanetary deep-space data links from Mars to Earth). Contents Superconducting Single-Photon Detectors Nanotechnological Manufacturing; Scale: 10 Nanometer Berezinskii-Kosterlitz Thouless (BKT) Transition, Edge-Barrier, Phase Slips Target Groups Researchers and students of...

  18. Anisotropic surface strain in single crystalline cobalt nanowires and its impact on the diameter-dependent Young's modulus

    KAUST Repository

    Huang, Xiaohu; Li, Guanghai; Kong, Lingbing; Huang, Yizhong; Wu, Tao

    2013-01-01

    Understanding and measuring the size-dependent surface strain of nanowires are essential to their applications in various emerging devices. Here, we report on the diameter-dependent surface strain and Young's modulus of single-crystalline Co

  19. Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

    Energy Technology Data Exchange (ETDEWEB)

    Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro [University of California, Santa Cruz (United States). Baskin School of Engineering; NASA Ames Research Center, Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, Univ. of California Santa Cruz, Moffett Field, CA (United States); Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S. [Hewlett-Packard Laboratories, Information and Quantum Systems Laboratory, Palo Alto, CA (United States); Logeeswaran, V.J.; Islam, M.S. [University of California Davis, Electrical and Computer Engineering, Davis, CA (United States)

    2009-06-15

    A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)

  20. Ensembles of indium phosphide nanowires: physical properties and functional devices integrated on non-single crystal platforms

    International Nuclear Information System (INIS)

    Kobayashi, Nobuhiko P.; Lohn, Andrew; Onishi, Takehiro; Mathai, Sagi; Li, Xuema; Straznicky, Joseph; Wang, Shih-Yuan; Williams, R.S.; Logeeswaran, V.J.; Islam, M.S.

    2009-01-01

    A new route to grow an ensemble of indium phosphide single-crystal semiconductor nanowires is described. Unlike conventional epitaxial growth of single-crystal semiconductor films, the proposed route for growing semiconductor nanowires does not require a single-crystal semiconductor substrate. In the proposed route, instead of using single-crystal semiconductor substrates that are characterized by their long-range atomic ordering, a template layer that possesses short-range atomic ordering prepared on a non-single-crystal substrate is employed. On the template layer, epitaxial information associated with its short-range atomic ordering is available within an area that is comparable to that of a nanowire root. Thus the template layer locally provides epitaxial information required for the growth of semiconductor nanowires. In the particular demonstration described in this paper, hydrogenated silicon was used as a template layer for epitaxial growth of indium phosphide nanowires. The indium phosphide nanowires grown on the hydrogenerated silicon template layer were found to be single crystal and optically active. Simple photoconductors and pin-diodes were fabricated and tested with the view towards various optoelectronic device applications where group III-V compound semiconductors are functionally integrated onto non-single-crystal platforms. (orig.)

  1. Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

    International Nuclear Information System (INIS)

    Dehzangi, Arash; Larki, Farhad; Naseri, Mahmud G.; Navasery, Manizheh; Majlis, Burhanuddin Y.; Razip Wee, Mohd F.; Halimah, M.K.; Islam, Md. Shabiul; Md Ali, Sawal H.; Saion, Elias

    2015-01-01

    Highlights: • Single crystal silicon nanowire is fabricated on Si on insulator substrate, using atomic force microscope (AFM) nanolithography and KOH + IPA chemical wet etching. • Some of major parameters in fabrication process, such as writing speed and applied voltage along with KOH etching depth are investigated, and then the I–V characteristic of Si nanowires is measured. • For better understanding of the charge transmission through the nanowire, 3D-TCAD simulation is performed to simulate the Si nanowires with the same size of the fabricated ones, and variation of majority and minority carriers, hole quasi-Fermi level and generation/recombination rate are investigated. - Abstract: Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63 °C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated

  2. Fabrication and simulation of single crystal p-type Si nanowire using SOI technology

    Energy Technology Data Exchange (ETDEWEB)

    Dehzangi, Arash, E-mail: arashd53@hotmail.com [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Larki, Farhad [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Naseri, Mahmud G. [Department of Physics, Faculty of Science, Malayer University, Malayer, Hamedan (Iran, Islamic Republic of); Navasery, Manizheh [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Majlis, Burhanuddin Y.; Razip Wee, Mohd F. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Halimah, M.K. [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia); Islam, Md. Shabiul; Md Ali, Sawal H. [Institute of Microengineering and Nanoelectronics (IMEN), Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor (Malaysia); Saion, Elias [Department of Physics, Faculty of Science, Universiti Putra Malaysia, 43400 Serdang, Selangor (Malaysia)

    2015-04-15

    Highlights: • Single crystal silicon nanowire is fabricated on Si on insulator substrate, using atomic force microscope (AFM) nanolithography and KOH + IPA chemical wet etching. • Some of major parameters in fabrication process, such as writing speed and applied voltage along with KOH etching depth are investigated, and then the I–V characteristic of Si nanowires is measured. • For better understanding of the charge transmission through the nanowire, 3D-TCAD simulation is performed to simulate the Si nanowires with the same size of the fabricated ones, and variation of majority and minority carriers, hole quasi-Fermi level and generation/recombination rate are investigated. - Abstract: Si nanowires (SiNWs) as building blocks for nanostructured materials and nanoelectronics have attracted much attention due to their major role in device fabrication. In the present work a top-down fabrication approach as atomic force microscope (AFM) nanolithography was performed on Si on insulator (SOI) substrate to fabricate a single crystal p-type SiNW. To draw oxide patterns on top of the SOI substrate local anodic oxidation was carried out by AFM in contact mode. After the oxidation procedure, an optimized solution of 30 wt.% KOH with 10 vol.% IPA for wet etching at 63 °C was applied to extract the nanostructure. The fabricated SiNW had 70–85 nm full width at half maximum width, 90 nm thickness and 4 μm length. The SiNW was simulated using Sentaurus 3D software with the exact same size of the fabricated device. I–V characterization of the SiNW was measured and compared with simulation results. Using simulation results variation of carrier's concentrations, valence band edge energy and recombination generation rate for different applied voltage were investigated.

  3. Quantum Tunneling of Magnetization in Trigonal Single-Molecule Magnets

    Science.gov (United States)

    Liu, Junjie; Del Barco, Enrique; Hill, Stephen

    2012-02-01

    We perform a numerical analysis of the quantum tunneling of magnetization (QTM) that occurs in a spin S = 6 single-molecule magnet (SMM) with idealized C3 symmetry. The deconstructive points in the QTM are located by following the Berry-phase interference (BPI) oscillations. We find that the O4^3 (=12[Sz,S+^3 +S-^3 ]) operator unfreezes odd-k QTM resonances and generates three-fold patterns of BPI minima in all resonances, including k = 0! This behavior cannot be reproduced with operators that possess even rotational symmetry about the quantization axis. We find also that the k = 0 BPI minima shift away from zero longitudinal field. The wider implications of these results will be discussed in terms of the QTM behavior observed in other SMMs.

  4. Plasmonic tunnel junctions for single-molecule redox chemistry.

    Science.gov (United States)

    de Nijs, Bart; Benz, Felix; Barrow, Steven J; Sigle, Daniel O; Chikkaraddy, Rohit; Palma, Aniello; Carnegie, Cloudy; Kamp, Marlous; Sundararaman, Ravishankar; Narang, Prineha; Scherman, Oren A; Baumberg, Jeremy J

    2017-10-20

    Nanoparticles attached just above a flat metallic surface can trap optical fields in the nanoscale gap. This enables local spectroscopy of a few molecules within each coupled plasmonic hotspot, with near thousand-fold enhancement of the incident fields. As a result of non-radiative relaxation pathways, the plasmons in such sub-nanometre cavities generate hot charge carriers, which can catalyse chemical reactions or induce redox processes in molecules located within the plasmonic hotspots. Here, surface-enhanced Raman spectroscopy allows us to track these hot-electron-induced chemical reduction processes in a series of different aromatic molecules. We demonstrate that by increasing the tunnelling barrier height and the dephasing strength, a transition from coherent to hopping electron transport occurs, enabling observation of redox processes in real time at the single-molecule level.

  5. Low-frequency noise in single electron tunneling transistor

    DEFF Research Database (Denmark)

    Tavkhelidze, A.N.; Mygind, Jesper

    1998-01-01

    The noise in current biased aluminium single electron tunneling (SET) transistors has been investigated in the frequency range of 5 mHz ..., we find the same input charge noise, typically QN = 5 × 10–4 e/Hz1/2 at 10 Hz, with and without the HF shielding. At lower frequencies, the noise is due to charge trapping, and the voltage noise pattern superimposed on the V(Vg) curve (voltage across transistor versus gate voltage) strongly depends...... when ramping the junction voltage. Dynamic trapping may limit the high frequency applications of the SET transistor. Also reported on are the effects of rf irradiation and the dependence of the SET transistor noise on bias voltage. ©1998 American Institute of Physics....

  6. Superconducting nanowire single-photon detectors (SNSPDs) on SOI for near-infrared range

    Energy Technology Data Exchange (ETDEWEB)

    Trojan, Philipp; Il' in, Konstantin; Henrich, Dagmar; Hofherr, Matthias; Doerner, Steffen; Siegel, Michael [Institut fuer Mikro- und Nanoelektronische Systeme (IMS), Karlsruher Institut fuer Technologie (KIT) (Germany); Semenov, Alexey [Institut fuer Planetenforschung, DLR, Berlin-Adlershof (Germany); Huebers, Heinz-Wilhelm [Institut fuer Planetenforschung, DLR, Berlin-Adlershof (Germany); Institut fuer Optik und Atomare Physik, Technische Universitaet Berlin (Germany)

    2013-07-01

    Superconducting nanowire single-photon detectors are promising devices for photon detectors with high count rates, low dark count rates and low dead times. At wavelengths beyond the visible range, the detection efficiency of today's SNSPDs drops significantly. Moreover, the low absorption in ultra-thin detector films is a limiting factor over the entire spectral range. Solving this problem requires approaches for an enhancement of the absorption range in feeding the light to the detector element. A possibility to obtain a better absorption is the use of multilayer substrate materials for photonic waveguide structures. We present results on development of superconducting nanowire single-photon detectors made from niobium nitride on silicon-on-insulator (SOI) multilayer substrates. Optical and superconducting properties of SNSPDs on SOI will be discussed and compared with the characteristics of detectors on common substrates.

  7. Controlling the Coupling of a Single Nitrogen Vacancy Center to a Silver Nanowire

    DEFF Research Database (Denmark)

    Huck, Alexander; Kumar, Shailesh; Shakoor, Abdul

    2011-01-01

    Dipole emitters are expected to efficiently couple to the plasmonic mode propagating along a cylindrically shaped metallic nano-structure. Such a strongly coupled system could serve as a fundamental building block for a single photon source on demand and a device enabling strong non-linear intera...... control over the relative nanowire diamond nano-crystal position is achieved by using an atomic force microscope (AFM) in contact mode operation....

  8. Antibacterial activity of single crystalline silver-doped anatase TiO{sub 2} nanowire arrays

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Xiangyu, E-mail: zhangxiangyu@tyut.edu.cn; Li, Meng; He, Xiaojing; Hang, Ruiqiang; Huang, Xiaobo; Wang, Yueyue; Yao, Xiaohong; Tang, Bin, E-mail: tangbin@tyut.edu.cn

    2016-05-30

    Graphical abstract: The silver-doped TiO{sub 2} nanowire arrays on titanium foil substrate were synthesized via a two-step process. It includes: deposition of AgTi films on titanium foil by magnetron sputtering; preparation of AgNW arrays on AgTi films via alkali (NaOH) hydrothermal treatment and ion-exchange with HCl, followed by calcinations. - Highlights: • Ag-doped TiO{sub 2} nanowire arrays have been prepared by a duplex-treatment. • The duplex-treatment consisted of magnetron sputtering and hydrothermal growth. • Ag-doped nanowire arrays show excellent antibacterial activity against E. coli. - Abstract: Well-ordered, one-dimensional silver-doped anatase TiO{sub 2} nanowire (AgNW) arrays have been prepared through a hydrothermal growth process on the sputtering-deposited AgTi layers. Electron microscope analyses reveal that the as-synthesized AgNW arrays exhibit a single crystalline phase with highly uniform morphologies, diameters ranging from 85 to 95 nm, and lengths of about 11 μm. Silver is found to be doped into TiO{sub 2} nanowire evenly and mainly exists in the zerovalent state. The AgNW arrays show excellent efficient antibacterial activity against Escherichia coli (E. coli), and all of the bacteria can be killed within 1 h. Additionally, the AgNW arrays can still kill E. coli after immersion for 60 days, suggesting the long-term antibacterial property. The technique reported here is environmental friendly for formation of silver-containing nanostructure without using any toxic organic solvents.

  9. Organic Nanowires

    DEFF Research Database (Denmark)

    Balzer, Frank; Schiek, Manuela; Al-Shamery, Katharina

    Single crystalline nanowires from fluorescing organic molecules like para-phenylenes or thiophenes are supposed to become key elements in future integrated optoelectronic devices [1]. For a sophisticated design of devices based on nanowires the basic principles of the nanowire formation have...... atomic force microscopy and from polarized far-field optical microscopy for various prototypical molecules are reproduced by electrostatic and Monte Carlo calculations. Based on the crystal structure, predictions on the growth habit from other conjugated molecules become in reach....

  10. Nano-optical observation of cascade switching in a parallel superconducting nanowire single photon detector

    International Nuclear Information System (INIS)

    Heath, Robert M.; Tanner, Michael G.; Casaburi, Alessandro; Hadfield, Robert H.; Webster, Mark G.; San Emeterio Alvarez, Lara; Jiang, Weitao; Barber, Zoe H.; Warburton, Richard J.

    2014-01-01

    The device physics of parallel-wire superconducting nanowire single photon detectors is based on a cascade process. Using nano-optical techniques and a parallel wire device with spatially separate pixels, we explicitly demonstrate the single- and multi-photon triggering regimes. We develop a model for describing efficiency of a detector operating in the arm-trigger regime. We investigate the timing response of the detector when illuminating a single pixel and two pixels. We see a change in the active area of the detector between the two regimes and find the two-pixel trigger regime to have a faster timing response than the one-pixel regime

  11. A high efficiency superconducting nanowire single electron detector

    NARCIS (Netherlands)

    Rosticher, M.; Ladan, F.R.; Maneval, J.P.; Dorenbos, S.N.; Zijlstra, T.; Klapwijk, T.M.; Zwiller, V.; Lupa?cu, A.; Nogues, G.

    2010-01-01

    We report the detection of single electrons using a Nb0.7Ti0.3N superconducting wire deposited on an oxidized silicon substrate. While it is known that this device is sensitive to single photons, we show that it also detects single electrons with kilo-electron-volt energy emitted from the cathode of

  12. Localized tip enhanced Raman spectroscopic study of impurity incorporated single GaN nanowire in the sub-diffraction limit

    International Nuclear Information System (INIS)

    Patsha, Avinash; Dhara, Sandip; Tyagi, A. K.

    2015-01-01

    The localized effect of impurities in single GaN nanowires in the sub-diffraction limit is reported using the study of lattice vibrational modes in the evanescent field of Au nanoparticle assisted tip enhanced Raman spectroscopy (TERS). GaN nanowires with the O impurity and the Mg dopants were grown by the chemical vapor deposition technique in the catalyst assisted vapor-liquid-solid process. Symmetry allowed Raman modes of wurtzite GaN are observed for undoped and doped nanowires. Unusually very strong intensity of the non-zone center zone boundary mode is observed for the TERS studies of both the undoped and the Mg doped GaN single nanowires. Surface optical mode of A 1 symmetry is also observed for both the undoped and the Mg doped GaN samples. A strong coupling of longitudinal optical (LO) phonons with free electrons, however, is reported only in the O rich single nanowires with the asymmetric A 1 (LO) mode. Study of the local vibration mode shows the presence of Mg as dopant in the single GaN nanowires

  13. Localized tip enhanced Raman spectroscopic study of impurity incorporated single GaN nanowire in the sub-diffraction limit

    Energy Technology Data Exchange (ETDEWEB)

    Patsha, Avinash, E-mail: avinash.phy@gmail.com, E-mail: dhara@igcar.gov.in; Dhara, Sandip; Tyagi, A. K. [Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Kalpakkam 603102 (India)

    2015-09-21

    The localized effect of impurities in single GaN nanowires in the sub-diffraction limit is reported using the study of lattice vibrational modes in the evanescent field of Au nanoparticle assisted tip enhanced Raman spectroscopy (TERS). GaN nanowires with the O impurity and the Mg dopants were grown by the chemical vapor deposition technique in the catalyst assisted vapor-liquid-solid process. Symmetry allowed Raman modes of wurtzite GaN are observed for undoped and doped nanowires. Unusually very strong intensity of the non-zone center zone boundary mode is observed for the TERS studies of both the undoped and the Mg doped GaN single nanowires. Surface optical mode of A{sub 1} symmetry is also observed for both the undoped and the Mg doped GaN samples. A strong coupling of longitudinal optical (LO) phonons with free electrons, however, is reported only in the O rich single nanowires with the asymmetric A{sub 1}(LO) mode. Study of the local vibration mode shows the presence of Mg as dopant in the single GaN nanowires.

  14. Rapid synthesis and catalytic performance of {alpha}-Mn{sub 2}O{sub 3} single-crystal nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Yuan, Xinsong; Hu, Xingming; Zhu, Jinmiao; Dong, Huaze; Wang, Yanping [Department of Chemistry and Chemical Engineering, Hefei Normal University, Hefei 230061 (China); Yang, Baojun [Anhui Key Laboratory of Controllable Chemistry Reaction and Material Chemical Engineering, School of Chemical Engineering, Hefei University of Technology, Hefei 230009 (China); Hao, Jianwen [Department of Chemical Engineering, Anhui Vocational and Technical College, Hefei 230051 (China)

    2011-12-15

    Single-crystal {alpha}-Mn{sub 2}O{sub 3} nanowires were prepared via a ''self-sacrificing template'' route, simply by calcining the prepared {alpha}-MnO{sub 2} nanowire precursors at 550 C for 1.5 h. XRD, TEM, SEM and HRTEM characterizations show that the as-prepared {alpha}-Mn{sub 2}O{sub 3} samples are all phase pure and the nanowires have uniform diameters of approximately 15-30 nm and lengths up to several micrometers. The catalytic performances of the prepared {alpha}-Mn{sub 2}O{sub 3} nanowires were studied in the degradation of coking wastewater with H{sub 2}O{sub 2} as the oxidant, and the technological conditions were optimized by single-factor and orthogonal experiments. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  15. A graphene/single GaAs nanowire Schottky junction photovoltaic device.

    Science.gov (United States)

    Luo, Yanbin; Yan, Xin; Zhang, Jinnan; Li, Bang; Wu, Yao; Lu, Qichao; Jin, Chenxiaoshuai; Zhang, Xia; Ren, Xiaomin

    2018-05-04

    A graphene/nanowire Schottky junction is a promising structure for low-cost high-performance optoelectronic devices. Here we demonstrate a graphene/single GaAs nanowire Schottky junction photovoltaic device. The Schottky junction is fabricated by covering a single layer graphene onto an n-doped GaAs nanowire. Under 532 nm laser excitation, the device exhibits a high responsivity of 231 mA W-1 and a short response/recover time of 85/118 μs at zero bias. Under AM 1.5 G solar illumination, the device has an open-circuit voltage of 75.0 mV and a short-circuit current density of 425 mA cm-2, yielding a remarkable conversion efficiency of 8.8%. The excellent photovoltaic performance of the device is attributed to the strong built-in electric field in the Schottky junction as well as the transparent property of graphene. The device is promising for self-powered high-speed photodetectors and low-cost high-efficiency solar cells.

  16. Carrier thermalization dynamics in single zincblende and wurtzite InP Nanowires.

    Science.gov (United States)

    Wang, Yuda; Jackson, Howard E; Smith, Leigh M; Burgess, Tim; Paiman, Suriati; Gao, Qiang; Tan, Hark Hoe; Jagadish, Chennupati

    2014-12-10

    Using transient Rayleigh scattering (TRS) measurements, we obtain photoexcited carrier thermalization dynamics for both zincblende (ZB) and wurtzite (WZ) InP single nanowires (NW) with picosecond resolution. A phenomenological fitting model based on direct band-to-band transition theory is developed to extract the electron-hole-plasma density and temperature as a function of time from TRS measurements of single nanowires, which have complex valence band structures. We find that the thermalization dynamics of hot carriers depends strongly on material (GaAs NW vs InP NW) and less strongly on crystal structure (ZB vs WZ). The thermalization dynamics of ZB and WZ InP NWs are similar. But a comparison of the thermalization dynamics in ZB and WZ InP NWs with ZB GaAs NWs reveals more than an order of magnitude slower relaxation for the InP NWs. We interpret these results as reflecting their distinctive phonon band structures that lead to different hot phonon effects. Knowledge of hot carrier thermalization dynamics is an essential component for effective incorporation of nanowire materials into electronic devices.

  17. Investigation into Photoconductivity in Single CNF/TiO2-Dye Core–Shell Nanowire Devices

    Directory of Open Access Journals (Sweden)

    Rochford Caitlin

    2010-01-01

    Full Text Available Abstract A vertically aligned carbon nanofiber array coated with anatase TiO2 (CNF/TiO2 is an attractive possible replacement for the sintered TiO2 nanoparticle network in the original dye-sensitized solar cell (DSSC design due to the potential for improved charge transport and reduced charge recombination. Although the reported efficiency of 1.1% in these modified DSSC’s is encouraging, the limiting factors must be identified before a higher efficiency can be obtained. This work employs a single nanowire approach to investigate the charge transport in individual CNF/TiO2 core–shell nanowires with adsorbed N719 dye molecules in dark and under illumination. The results shed light on the role of charge traps and dye adsorption on the (photo conductivity of nanocrystalline TiO2 CNF’s as related to dye-sensitized solar cell performance.

  18. Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact

    Energy Technology Data Exchange (ETDEWEB)

    Babichev, A. V., E-mail: A.Babichev@mail.ioffe.ru [Russian Academy of Sciences, Ioffe Institute (Russian Federation); Zhang, H.; Guan, N. [University Paris Saclay, Institut d’Electronique Fondamentale, UMR 8622 CNRS (France); Egorov, A. Yu. [ITMO University (Russian Federation); Julien, F. H.; Messanvi, A. [University Paris Saclay, Institut d’Electronique Fondamentale, UMR 8622 CNRS (France); Durand, C.; Eymery, J. [University Grenoble Alpes (France); Tchernycheva, M. [University Paris Saclay, Institut d’Electronique Fondamentale, UMR 8622 CNRS (France)

    2016-08-15

    We report the fabrication and optical and electrical characterization of photodetectors for the UV spectral range based on single p–n junction nanowires with a transparent contact of a new type. The contact is based on CVD-grown (chemical-vapor deposition) graphene. The active region of the nitride nanowires contains a set of 30 radial In{sub 0.18}Ga{sub 0.82}N/GaN quantum wells. The structure is grown by metal-organic vaporphase epitaxy. The photodetectors are fabricated using electron-beam lithography. The current–voltage characteristics exhibit a rectifying behavior. The spectral sensitivity of the photodetector is recorded starting from 3 eV and extending far in the UV range. The maximal photoresponse is observed at a wavelength of 367 nm (sensitivity 1.9 mA/W). The response switching time of the photodetector is less than 0.1 s.

  19. A highly efficient single-photon source based on a quantum dot in a photonic nanowire

    DEFF Research Database (Denmark)

    Claudon, Julien; Bleuse, Joel; Malik, Nitin Singh

    2010-01-01

    –4 or a semiconductor quantum dot5–7. Achieving a high extraction efficiency has long been recognized as a major issue, and both classical solutions8 and cavity quantum electrodynamics effects have been applied1,9–12. We adopt a different approach, based on an InAs quantum dot embedded in a GaAs photonic nanowire......The development of efficient solid-state sources of single photons is a major challenge in the context of quantum communication,optical quantum information processing and metrology1. Such a source must enable the implementation of a stable, single-photon emitter, like a colour centre in diamond2...

  20. Analytical calculation of spin tunneling effect in single molecule magnet Fe8 with considering quadrupole excitation

    OpenAIRE

    Y Yousefi; H Fakhari; K Muminov; M R Benam

    2018-01-01

    Spin tunneling effect in Single Molecule Magnet Fe8 is studied by instanton calculation technique using SU(3) generalized spin coherent state in real parameter as a trial function. For this SMM, tunnel splitting arises due to the presence of a Berry like phase in action, which causes interference between tunneling trajectories (instantons). For this SMM, it is established that the use of quadrupole excitation (g dependence) changes not only the location of the quenching points, but also the n...

  1. Quantum Tunneling of Magnetization in Single Molecular Magnets Coupled to Ferromagnetic Reservoirs

    OpenAIRE

    Misiorny, Maciej; Barnas, Józef

    2006-01-01

    The role of spin polarized reservoirs in quantum tunneling of magnetization and relaxation processes in a single molecular magnet (SMM) is investigated theoretically. The SMM is exchange-coupled to the reservoirs and also subjected to a magnetic field varying in time, which enables the quantum tunneling of magnetization (QTM). The spin relaxation times are calculated from the Fermi golden rule. The exchange interaction with tunneling electrons is shown to affect the spin reversal due to QTM. ...

  2. Manifestation of Spin Selection Rules on the Quantum Tunneling of Magnetization in a Single Molecule Magnet

    OpenAIRE

    Henderson, J. J.; Koo, C.; Feng, P. L.; del Barco, E.; Hill, S.; Tupitsyn, I. S.; Stamp, P. C. E.; Hendrickson, D. N.

    2009-01-01

    We present low temperature magnetometry measurements on a new Mn3 single-molecule magnet (SMM) in which the quantum tunneling of magnetization (QTM) displays clear evidence for quantum mechanical selection rules. A QTM resonance appearing only at elevated temperatures demonstrates tunneling between excited states with spin projections differing by a multiple of three: this is dictated by the C3 symmetry of the molecule, which forbids pure tunneling from the lowest metastable state. Resonances...

  3. Frequency-multiplexed bias and readout of a 16-pixel superconducting nanowire single-photon detector array

    Science.gov (United States)

    Doerner, S.; Kuzmin, A.; Wuensch, S.; Charaev, I.; Boes, F.; Zwick, T.; Siegel, M.

    2017-07-01

    We demonstrate a 16-pixel array of microwave-current driven superconducting nanowire single-photon detectors with an integrated and scalable frequency-division multiplexing architecture, which reduces the required number of bias and readout lines to a single microwave feed line. The electrical behavior of the photon-sensitive nanowires, embedded in a resonant circuit, as well as the optical performance and timing jitter of the single detectors is discussed. Besides the single pixel measurements, we also demonstrate the operation of a 16-pixel array with a temporal, spatial, and photon-number resolution.

  4. Heterojunction metal-oxide-metal Au-Fe{sub 3}O{sub 4}-Au single nanowire device for spintronics

    Energy Technology Data Exchange (ETDEWEB)

    Reddy, K. M., E-mail: mrkongara@boisestate.edu; Punnoose, Alex; Hanna, Charles [Department of Physics, Boise State University, Boise, Idaho 83725 (United States); Padture, Nitin P. [School of Engineering, Brown University, Providence, Rhode Island 02912 (United States)

    2015-05-07

    In this report, we present the synthesis of heterojunction magnetite nanowires in alumina template and describe magnetic and electrical properties from a single nanowire device for spintronics applications. Heterojunction Au-Fe-Au nanowire arrays were electrodeposited in porous aluminum oxide templates, and an extensive and controlled heat treatment process converted Fe segment to nanocrystalline cubic magnetite phase with well-defined Au-Fe{sub 3}O{sub 4} interfaces as confirmed by the transmission electron microscopy. Magnetic measurements revealed Verwey transition shoulder around 120 K and a room temperature coercive field of 90 Oe. Current–voltage (I-V) characteristics of a single Au-Fe{sub 3}O{sub 4}-Au nanowire have exhibited Ohmic behavior. Anomalous positive magnetoresistance of about 0.5% is observed on a single nanowire, which is attributed to the high spin polarization in nanowire device with pure Fe{sub 3}O{sub 4} phase and nanocontact barrier. This work demonstrates the ability to preserve the pristine Fe{sub 3}O{sub 4} and well defined electrode contact metal (Au)–magnetite interface, which helps in attaining high spin polarized current.

  5. Tunneling-Electron-Induced Light Emission from Single Gold Nanoclusters.

    Science.gov (United States)

    Yu, Arthur; Li, Shaowei; Czap, Gregory; Ho, W

    2016-09-14

    The coupling of tunneling electrons with the tip-nanocluster-substrate junction plasmon was investigated by monitoring light emission in a scanning tunneling microscope (STM). Gold atoms were evaporated onto the ∼5 Å thick Al2O3 thin film grown on the NiAl (110) surface where they formed nanoclusters 3-7 nm wide. Scanning tunneling spectroscopy (STS) of these nanoclusters revealed quantum-confined electronic states. Spatially resolved photon imaging showed localized emission hot spots. Size dependent study and light emission from nanocluster dimers further support the viewpoint that coupling of tunneling electrons to the junction plasmon is the main radiative mechanism. These results showed the potential of the STM to reveal the electronic and optical properties of nanoscale metallic systems in the confined geometry of the tunnel junction.

  6. Magnetic Quantum Tunneling and Symmetry in Single Molecule Magnets

    Science.gov (United States)

    Kent, Andrew D.

    2003-03-01

    We have studied the symmetry of magnetic quantum tunneling (MQT) in single molecule magnets (SMMs) using a micro-Hall effect magnetometer and high field vector superconducting magnet system. In the most widely studied SMM, Mn12-acetate, an average crystal 4-fold symmetry in the magnetic response is shown to be due to local molecular environments of 2-fold symmetry that are rotated by 90 degrees with respect to one another. We attribute this to ligand disorder that leads to local rhombic distortions, a model first proposed by Cornia et al. based on x-ray diffraction data [1]. We have magnetically distilled a Mn12-acetate crystal to study a subset of these lower (2-fold) site symmetry molecules and present evidence for a spin-parity effect consistent with a local 2-fold symmetry [2]. These results highlight the importance of subtle changes in molecule environment in modulating magnetic anisotropy and MQT. [1] Cornia et al. Phys. Rev. Lett. 89, 257201 (2002) [2] E. del Barco, A. D. Kent, E. Rumberger, D. H. Hendrickson, G. Christou, submitted for publication (2002) and Europhys. Lett. 60, 768 (2002)

  7. Electrical control of single hole spins in nanowire quantum dots

    NARCIS (Netherlands)

    Pribiag, V.S.; Nadj-Perge, S.; Frolov, S.M.; Berg, J.W.G.; Weperen, van I.; Plissard, S.R.; Bakkers, E.P.A.M.; Kouwenhoven, L.P.

    2013-01-01

    The development of viable quantum computation devices will require the ability to preserve the coherence of quantum bits (qubits)1. Single electron spins in semiconductor quantum dots are a versatile platform for quantum information processing, but controlling decoherence remains a considerable

  8. The physics of nanowire superconducting single-photon detectors

    NARCIS (Netherlands)

    Renema, Jelmer Jan

    2015-01-01

    We investigate the detection mechanism in superconducting single photon detectors via quantum detector tomography. We find that the detection event is caused by diffusion of quasiparticles from the absorption spot, combined with entrance of a vortex. Moreover, we investigate the behaviour of

  9. METHOD FOR MANUFACTURING A SINGLE CRYSTAL NANO-WIRE

    NARCIS (Netherlands)

    Van Den Berg, Albert; Bomer, Johan; Carlen Edwin, Thomas; Chen, Songyue; Kraaijenhagen Roderik, Adriaan; Pinedo Herbert, Michael

    2012-01-01

    A method for manufacturing a single crystal nano-structure includes providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing parts of the stress layer to

  10. METHOD FOR MANUFACTURING A SINGLE CRYSTAL NANO-WIRE.

    NARCIS (Netherlands)

    Van Den Berg, Albert; Bomer, Johan; Carlen Edwin, Thomas; Chen, Songyue; Kraaijenhagen Roderik, Adriaan; Pinedo Herbert, Michael

    2011-01-01

    A method for manufacturing a single crystal nano-structure is provided comprising the steps of providing a device layer with a 100 structure on a substrate; providing a stress layer onto the device layer; patterning the stress layer along the 110 direction of the device layer; selectively removing

  11. Single-magnon tunneling through a ferromagnetic nanochain

    International Nuclear Information System (INIS)

    Petrov, E.G.; Ostrovsky, V.

    2010-01-01

    Magnon transmission between ferromagnetic contacts coupled by a linear ferromagnetic chain is studied at the condition when the chain exhibits itself as a tunnel magnon transmitter. It is shown that dependently on magnon energy at the chain, a distant intercontact magnon transmission occurs either in resonant or off-resonant tunneling regime. In the first case, a transmission function depends weakly on the number of chain sites whereas at off-resonant regime the same function manifests an exponential drop with the chain length. Change of direction of external magnetic field in one of ferromagnetic contacts blocks a tunnel transmission of magnon.

  12. Anisotropic surface strain in single crystalline cobalt nanowires and its impact on the diameter-dependent Young's modulus

    KAUST Repository

    Huang, Xiaohu

    2013-01-01

    Understanding and measuring the size-dependent surface strain of nanowires are essential to their applications in various emerging devices. Here, we report on the diameter-dependent surface strain and Young\\'s modulus of single-crystalline Co nanowires investigated by in situ X-ray diffraction measurements. Diameter-dependent initial longitudinal elongation of the nanowires is observed and ascribed to the anisotropic surface stress due to the Poisson effect, which serves as the basis for mechanical measurements. As the nanowire diameter decreases, a transition from the "smaller is softer" regime to the "smaller is tougher" regime is observed in the Young\\'s modulus of the nanowires, which is attributed to the competition between the elongation softening and the surface stiffening effects. Our work demonstrates a new nondestructive method capable of measuring the initial surface strain and estimating the Young\\'s modulus of single crystalline nanowires, and provides new insights on the size effect. © 2013 The Royal Society of Chemistry.

  13. Single nanowire green InGaN/GaN light emitting diodes

    Science.gov (United States)

    Zhang, Guogang; Li, Ziyuan; Yuan, Xiaoming; Wang, Fan; Fu, Lan; Zhuang, Zhe; Ren, Fang-Fang; Liu, Bin; Zhang, Rong; Tan, Hark Hoe; Jagadish, Chennupati

    2016-10-01

    Single nanowire (NW) green InGaN/GaN light-emitting diodes (LEDs) were fabricated by top-down etching technology. The electroluminescence (EL) peak wavelength remains approximately constant with an increasing injection current in contrast to a standard planar LED, which suggests that the quantum-confined Stark effect is significantly reduced in the single NW device. The strain relaxation mechanism is studied in the single NW LED using Raman scattering analysis. As compared to its planar counterpart, the EL peak of the NW LED shows a redshift, due to electric field redistribution as a result of changes in the cavity mode pattern after metallization. Our method has important implication for single NW optoelectronic device applications.

  14. Comparing Hall Effect and Field Effect Measurements on the Same Single Nanowire.

    Science.gov (United States)

    Hultin, Olof; Otnes, Gaute; Borgström, Magnus T; Björk, Mikael; Samuelson, Lars; Storm, Kristian

    2016-01-13

    We compare and discuss the two most commonly used electrical characterization techniques for nanowires (NWs). In a novel single-NW device, we combine Hall effect and back-gated and top-gated field effect measurements and quantify the carrier concentrations in a series of sulfur-doped InP NWs. The carrier concentrations from Hall effect and field effect measurements are found to correlate well when using the analysis methods described in this work. This shows that NWs can be accurately characterized with available electrical methods, an important result toward better understanding of semiconductor NW doping.

  15. Fabrication of double-dot single-electron transistor in silicon nanowire

    International Nuclear Information System (INIS)

    Jo, Mingyu; Kaizawa, Takuya; Arita, Masashi; Fujiwara, Akira; Ono, Yukinori; Inokawa, Hiroshi; Choi, Jung-Bum; Takahashi, Yasuo

    2010-01-01

    We propose a simple method for fabricating Si single-electron transistors (SET) with coupled dots by means of a pattern-dependent-oxidation (PADOX) method. The PADOX method is known to convert a small one-dimensional Si wire formed on a silicon-on-insulator (SOI) substrate into a SET automatically. We fabricated a double-dot Si SET when we oxidized specially designed Si nanowires formed on SOI substrates. We analyzed the measured electrical characteristics by fitting the measurement and simulation results and confirmed the double-dot formation and the position of the two dots in the Si wire.

  16. Analysis of Co-Tunneling Current in Fullerene Single-Electron Transistor

    Science.gov (United States)

    KhademHosseini, Vahideh; Dideban, Daryoosh; Ahmadi, MohammadTaghi; Ismail, Razali

    2018-05-01

    Single-electron transistors (SETs) are nano devices which can be used in low-power electronic systems. They operate based on coulomb blockade effect. This phenomenon controls single-electron tunneling and it switches the current in SET. On the other hand, co-tunneling process increases leakage current, so it reduces main current and reliability of SET. Due to co-tunneling phenomenon, main characteristics of fullerene SET with multiple islands are modelled in this research. Its performance is compared with silicon SET and consequently, research result reports that fullerene SET has lower leakage current and higher reliability than silicon counterpart. Based on the presented model, lower co-tunneling current is achieved by selection of fullerene as SET island material which leads to smaller value of the leakage current. Moreover, island length and the number of islands can affect on co-tunneling and then they tune the current flow in SET.

  17. Synthesis, structure and optical properties of single-crystalline In{sub 2}O{sub 3} nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Hadia, N.M.A., E-mail: nomery_abass@yahoo.com [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); Mohamed, H.A. [Physics Department, Faculty of Science, Sohag University, 82524 Sohag (Egypt); King Saud University, Teachers College, Science Department (Physics), 11148 Riyadh (Saudi Arabia)

    2013-01-15

    Highlights: Black-Right-Pointing-Pointer Metal and metal oxide one dimensional (1D) nanostructured materials are of crucial importance. Black-Right-Pointing-Pointer The paper deals with the synthesis of In{sub 2}O{sub 3} nanowires without the use of catalysts. Black-Right-Pointing-Pointer The optical constants and Photoluminescence (PL) of In{sub 2}O{sub 3} nanowires were evaluated. - Abstract: Indium oxide In{sub 2}O{sub 3} nanowires have been recently synthesized revealing interesting properties and used in various applications. In order to reduce as much as possible the influence of undesired dopants and/or impurities on the observed properties, In{sub 2}O{sub 3} nanowires have been grown without the use of catalysts, directly from metallic indium by a vapor transport technique and a controlled oxidation with oxygen-argon mixtures. Depending on the growth conditions (temperature, vapor pressure, oxygen concentration, etc.) different results have been achieved and it has been observed that a 'proper' In condensation on the substrates may enhance the nanowires growth. Detailed structural analysis showed that the In{sub 2}O{sub 3} nanostructures are single crystalline with a cubic crystal structure. The grown In{sub 2}O{sub 3} nanowires were optically characterized in order to evaluate the absorption coefficient, optical band gap, refractive index and extinction coefficient. Room temperature Photoluminescence (PL) spectrum showed broad and intense blue emission at 375 nm.

  18. Quantum Tunneling Symmetry of Single Molecule Magnet Mn_12-acetate

    Science.gov (United States)

    del Barco, E.; Kent, A. D.; Rumberger, E.; Hendrikson, D. N.; Christou, G.

    2003-03-01

    We have studied the symmetry of magnetic quantum tunneling (MQT) in single crystals of single molecular magnet (SMM) Mn_12-acetate. A superconducting high field vector magnet was used to apply magnetic fields in arbitrary directions respect to the axes of the crystal. The MQT probability is extracted from the change in magnetization measured on sweeping the field through a MQT resonance. This is related to the quantum splitting of the molecules relaxing in the time window of the experiment [1]. The dependence of the MQT probability on the angle between the applied transverse field and the crystallographic axes shows a four-fold rotation pattern, with maxima at angles separated by 90 degrees. By selecting a part of the splitting distribution of the sample by applying an initial transverse field in the direction of one of the observed maxima the situation changes completely. The resulting behavior of the MQT probability shows a two-fold rotation pattern with maxima separated by 180 degrees. Moreover, if the selection is made by applying the initial transverse field in the direction of a complementary four-fold maximum the behavior shows again two-fold symmetry. However, the maxima are found to be shifted by 90 degrees respect to the first selection. The fact that we observe two-fold symmetry for different selections is a clear evidence of the existence of different molecules with lower anisotropy than the imposed by the tetragonal crystallographic site symmetry. The general four-fold symmetry observed is thus due in large part to equal populations of molecules with opposite signs of the second order anisotropy, as suggested by Cornia et al. and appears to be a consequence of to the existence of a discrete set of lower symmetry isomers in a Mn_12-acetate crystal [2]. [1] E. del Barco, A. D. Kent, E. Rumberger, D. N. Hendrikson and G. Christou, Europhys. Lett. 60, 768 (2002) [2] A. Cornia, R. Sessoli, L. Sorace, D. Gatteschi, A. L. Barra and C. Daiguebonne, Phys. Rev

  19. All-electric-controlled spin current switching in single-molecule magnet-tunnel junctions

    Science.gov (United States)

    Zhang, Zheng-Zhong; Shen, Rui; Sheng, Li; Wang, Rui-Qiang; Wang, Bai-Gen; Xing, Ding-Yu

    2011-04-01

    A single-molecule magnet (SMM) coupled to two normal metallic electrodes can both switch spin-up and spin-down electronic currents within two different windows of SMM gate voltage. Such spin current switching in the SMM tunnel junction arises from spin-selected single electron resonant tunneling via the lowest unoccupied molecular orbit of the SMM. Since it is not magnetically controlled but all-electrically controlled, the proposed spin current switching effect may have potential applications in future spintronics.

  20. A radio-frequency single-electron transistor based on an InAs/InP heterostructure nanowire

    DEFF Research Database (Denmark)

    Nilsson, Henrik A.; Duty, Tim; Abay, Simon

    2008-01-01

    We demonstrate radio frequency single-electron transistors fabricated from epitaxially grown InAs/InP heterostructure nanowires. Two sets of double-barrier wires with different barrier thicknesses were grown. The wires were suspended 15 nm above a metal gate electrode. Electrical measurements...... on a high-resistance nanowire showed regularly spaced Coulomb oscillations at a gate voltage from −0.5 to at least 1.8 V. The charge sensitivity was measured to 32 µerms Hz−1/2 at 1.5 K. A low-resistance single-electron transistor showed regularly spaced oscillations only in a small gate-voltage region just...

  1. Tunneling anisotropic magnetoresistance: A spin-valve-like tunnel magnetoresistance using a single magnetic layer

    Czech Academy of Sciences Publication Activity Database

    Gould, C.; Rüster, C.; Jungwirth, Tomáš; Girgis, E.; Schott, G. M.; Giraud, R.; Brunner, K.; Schmidt, G.; Molenkamp, L. W.

    2004-01-01

    Roč. 93, č. 11 (2004), 117203/1-117203/4 ISSN 0031-9007 R&D Projects: GA ČR GA202/02/0912 Institutional research plan: CEZ:AV0Z1010914 Keywords : semiconductor spintronics * tunneling anisotropic magnetoresistance Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 7.218, year: 2004

  2. Quantifying the Traction Force of a Single Cell by Aligned Silicon Nanowire Array

    KAUST Repository

    Li, Zhou

    2009-10-14

    The physical behaviors of stationary cells, such as the morphology, motility, adhesion, anchorage, invasion and metastasis, are likely to be important for governing their biological characteristics. A change in the physical properties of mammalian cells could be an indication of disease. In this paper, we present a silicon-nanowire-array based technique for quantifying the mechanical behavior of single cells representing three distinct groups: normal mammalian cells, benign cells (L929), and malignant cells (HeLa). By culturing the cells on top of NW arrays, the maximum traction forces of two different tumor cells (HeLa, L929) have been measured by quantitatively analyzing the bending of the nanowires. The cancer cell exhibits a larger traction force than the normal cell by ∼20% for a HeLa cell and ∼50% for a L929 cell. The traction forces have been measured for the L929 cells and mechanocytes as a function of culture time. The relationship between cells extending area and their traction force has been investigated. Our study is likely important for studying the mechanical properties of single cells and their migration characteristics, possibly providing a new cellular level diagnostic technique. © 2009 American Chemical Society.

  3. Magnetic and superconducting nanowires

    DEFF Research Database (Denmark)

    Piraux, L.; Encinas, A.; Vila, L.

    2005-01-01

    magnetic and superconducting nanowires. Using different approaches entailing measurements on both single wires and arrays, numerous interesting physical properties have been identified in relation to the nanoscopic dimensions of these materials. Finally, various novel applications of the nanowires are also...

  4. Compact, single-tube scanning tunneling microscope with thermoelectric cooling.

    Science.gov (United States)

    Jobbins, Matthew M; Agostino, Christopher J; Michel, Jolai D; Gans, Ashley R; Kandel, S Alex

    2013-10-01

    We have designed and built a scanning tunneling microscope with a compact inertial-approach mechanism that fits inside the piezoelectric scanner tube. Rigid construction allows the microscope to be operated without the use of external vibration isolators or acoustic enclosures. Thermoelectric cooling and a water-ice bath are used to increase temperature stability when scanning under ambient conditions.

  5. Tunnelling determined superconducting energy gap of bulk single crystal aluminum

    International Nuclear Information System (INIS)

    Civiak, R.L.

    1974-01-01

    A procedure has been developed for fabricating Giaver tunnel junctions on bulk aluminum. Al-I-Ag junctions were prepared, where I is the naturally formed oxide on the polished, chemically treated aluminum surface. The aluminum energy gap was determined from tunneling conductance curves obtained from samples oriented in three different crystal directions, and as a function of magnetic field in each of these orientations. In contrast to the results of microwave absorption measurements on superconducting aluminum, no magnetic field dependence could be measured for either the average gap or the spread in gap values of the tunneling electrons. This is consistent with commonly accepted tunneling selection rules, and Garfunkel's interpretation of the microwave behavior which depended upon adjusting the energy spectrum of only the electrons traveling parallel to the surface in the presence of a magnetic field. The energy gaps measured for samples oriented in the 100, 110 and 111 directions are 3.52, 3.50 and 3.39 kT/sub c/, respectively. The trend in the anisotropy is the same as in the calculation of Leavens and Carbotte, however, the magnitude of the anisotropy is smaller than in their calculation and that which previous measurements have indicated

  6. Real-time imaging systems for superconducting nanowire single-photon detector arrays

    Energy Technology Data Exchange (ETDEWEB)

    Hofherr, Matthias

    2014-07-01

    Superconducting nanowire singe-photon detectors (SNSPD) are promising detectors in the field of applications, where single-photon resolution is required like in quantum optics, spectroscopy or astronomy. These cryogenic detectors gain from a broad spectrum in the optical and infrared range and deliver low dark counts and low jitter. This work provides a piece of deeper physical understanding of detector functionality in combination with highly engineered readout development. A detailed analysis focuses on the intrinsic detection mechanism of SNSPDs related to the detection in the infrared regime and the evolution of dark counts. With this fundamental knowledge, the next step is the development of a multi-pixel readout at cryogenic conditions. It is demonstrated, how two auspicious multi-pixel readout concepts can be realized, which enables statistical framing like in imaging applications using RSFQ electronics with fast framing rates and the readout of a detector array with continuous real-time single-photon resolution.

  7. Electron tunnelling through single azurin molecules can be on/off switched by voltage pulses

    Energy Technology Data Exchange (ETDEWEB)

    Baldacchini, Chiara [Biophysics and Nanoscience Centre, DEB-CNISM, Università della Tuscia, I-01100 Viterbo (Italy); Institute of Agro-Environmental and Forest Biology, CNR, I-05010 Porano (Italy); Kumar, Vivek; Bizzarri, Anna Rita; Cannistraro, Salvatore, E-mail: cannistr@unitus.it [Biophysics and Nanoscience Centre, DEB-CNISM, Università della Tuscia, I-01100 Viterbo (Italy)

    2015-05-04

    Redox metalloproteins are emerging as promising candidates for future bio-optoelectronic and nano-biomemory devices, and the control of their electron transfer properties through external signals is still a crucial task. Here, we show that a reversible on/off switching of the electron current tunnelling through a single protein can be achieved in azurin protein molecules adsorbed on gold surfaces, by applying appropriate voltage pulses through a scanning tunnelling microscope tip. The observed changes in the hybrid system tunnelling properties are discussed in terms of long-sustained charging of the protein milieu.

  8. Nb/NiCu bilayers in single and stacked superconductive tunnel junctions: preliminary results

    International Nuclear Information System (INIS)

    Pepe, G.P.; Ruotolo, A.; Parlato, L.; Peluso, G.; Ausanio, G.; Carapella, G.; Latempa, R.

    2004-01-01

    We present preliminary experimental results concerning both single and stacked tunnel junctions in which one of the electrodes was formed by a superconductor/ferromagnet (S/F) bi-layer. In particular, in the stacked configuration a Nb/NiCu bi-layer was used as the intermediate electrode, and it was probed by tunneling on both sides. Tunnel junctions have been characterized in terms of current-voltage characteristics (IVC), and differential conductance. Preliminary steady-state injection-detection measurements performed in the stacked devices at T=4.2 K are also presented and discussed

  9. Quantum tunneling of magnetization in single molecular magnets coupled to ferromagnetic reservoirs

    Science.gov (United States)

    Misiorny, M.; Barnas, J.

    2007-04-01

    The role of spin polarized reservoirs in quantum tunneling of magnetization and relaxation processes in a single molecular magnet (SMM) is investigated theoretically. The SMM is exchange-coupled to the reservoirs and also subjected to a magnetic field varying in time, which enables the quantum tunneling of magnetization. The spin relaxation times are calculated from the Fermi golden rule. The exchange interaction of SMM and electrons in the leads is shown to affect the spin reversal due to quantum tunneling of magnetization. It is shown that the switching is associated with transfer of a certain charge between the leads.

  10. Two-body tunnel transitions in a Mn 4 single-molecule magnet

    Science.gov (United States)

    Wernsdorfer, W.; Bhaduri, S.; Tiron, R.; Hendrickson, D. N.; Christou, G.

    2004-05-01

    The one-body tunnel picture of single-molecule magnets (SMMs) is not always sufficient to explain the measured tunnel transitions. An improvement to the picture is proposed by including also two-body tunnel transitions such as spin-spin cross-relaxation (SSCR) which are mediated by dipolar and weak superexchange interactions between molecules. A Mn 4 SMM is used as a model system. At certain external fields, SSCRs lead to additional quantum resonances which show up in hysteresis loop measurements as well-defined steps.

  11. Kinetic parameter estimation and fluctuation analysis of CO at SnO 2 single nanowires

    KAUST Repository

    Tulzer, Gerhard; Baumgartner, Stefan; Brunet, Elise; Mutinati, Giorgio C; Steinhauer, Stephan; Kö ck, Anton; Barbano, Paolo E; Heitzinger, Clemens

    2013-01-01

    In this work, we present calculated numerical values for the kinetic parameters governing adsorption/desorption processes of carbon monoxide at tin dioxide single-nanowire gas sensors. The response of such sensors to pulses of 50 ppm carbon monoxide in nitrogen is investigated at different temperatures to extract the desired information. A rate-equation approach is used to model the reaction kinetics, which results in the problem of determining coefficients in a coupled system of nonlinear ordinary differential equations. The numerical values are computed by inverse-modeling techniques and are then used to simulate the sensor response. With our model, the dynamic response of the sensor due to the gas-surface interaction can be studied in order to find the optimal setup for detection, which is an important step towards selectivity of these devices. We additionally investigate the noise in the current through the nanowire and its changes due to the presence of carbon monoxide in the sensor environment. Here, we propose the use of a wavelet transform to decompose the signal and analyze the noise in the experimental data. This method indicates that some fluctuations are specific for the gas species investigated here. © 2013 IOP Publishing Ltd.

  12. Kinetic parameter estimation and fluctuation analysis of CO at SnO 2 single nanowires

    KAUST Repository

    Tulzer, Gerhard

    2013-07-12

    In this work, we present calculated numerical values for the kinetic parameters governing adsorption/desorption processes of carbon monoxide at tin dioxide single-nanowire gas sensors. The response of such sensors to pulses of 50 ppm carbon monoxide in nitrogen is investigated at different temperatures to extract the desired information. A rate-equation approach is used to model the reaction kinetics, which results in the problem of determining coefficients in a coupled system of nonlinear ordinary differential equations. The numerical values are computed by inverse-modeling techniques and are then used to simulate the sensor response. With our model, the dynamic response of the sensor due to the gas-surface interaction can be studied in order to find the optimal setup for detection, which is an important step towards selectivity of these devices. We additionally investigate the noise in the current through the nanowire and its changes due to the presence of carbon monoxide in the sensor environment. Here, we propose the use of a wavelet transform to decompose the signal and analyze the noise in the experimental data. This method indicates that some fluctuations are specific for the gas species investigated here. © 2013 IOP Publishing Ltd.

  13. Sub-electron transport in single-electron-tunneling arrays

    Science.gov (United States)

    Kaplan, Daniel; Sverdlov, Viktor; Korotkov, Alexander; Likharev, Konstantin

    2002-03-01

    We have analyzed quasi-continuous charge transport in two-dimensional tunnel junction arrays with a special distribution of background charges, providing a complete suppression of Coulomb blockade thresholds of tunneling between any pair of islands. Numerical simulations show that at low currents the dc I-V curve is indeed linear, while the shot noise is strongly suppressed and approaches 1/N of the Schottky value (where N is the array length). Thus both conditions of quasi-continuous transport, formulated earlier by Matsuoka and Likharev (Phys. Rev. B, v57, 15613, 1998), are satisfied. At higher fields the electron-hole pair production begins, and shot noise grows sharply. At higher voltages still, the array enters the "plasma" regime (with nearly balanced number of electrons and holes) and the Fano factor drops to 1/N once again. We have studied the resulting shot noise peak in detail, and concluded that its physics is close to that of critical opalescence.

  14. Study of electrical properties of single GaN nanowires grown by MOCVD with a Ti mask

    International Nuclear Information System (INIS)

    Vasiliev, A A; Mozharov, A M; Mukhin, I S; Rozhavskaya, M M; Lundin, V V

    2016-01-01

    We researched electrical characteristics of GaN nanowires (NWs) grown by MOCVD through solid titanium film. The technology of creating the ohmic contacts and MESFET structure on single NWs has been developed. The optimal annealing temperature of contacts has been found and conductivity structure, the free carrier concentration and mobility has been evaluated. (paper)

  15. Construction of a four tip scanning tunneling microscope/scanning electron microscope combination and conductivity measurements of silicide nanowires; Aufbau einer Vierspitzen-Rastertunnelmikroskop/Rasterelektronenmikroskop-Kombination und Leitfaehigkeitsmessungen an Silizid Nanodraehten

    Energy Technology Data Exchange (ETDEWEB)

    Zubkov, Evgeniy

    2013-09-01

    In this work the combination of a four-tip scanning tunneling microscope with a scanning electron microscope is presented. By means of this apparatus it is possible to perform the conductivity measurements on the in-situ prepared nanostructures in ultra-high vacuum. With the aid of a scanning electron microscope (SEM), it becomes possible to position the tunneling tips of the four-tip scanning tunneling microscope (STM), so that an arrangement for a four-point probe measurement on nanostructures can be obtained. The STM head was built according to the novel coaxial Beetle concept. This concept allows on the one hand, a very compact arrangement of the components of the STM and on the other hand, the new-built STM head has a good mechanical stability, in order to achieve atomic resolution with all four STM units. The atomic resolution of the STM units was confirmed by scanning a Si(111)-7 x 7 surface. The thermal drift during the STM operation, as well as the resonant frequencies of the mechanical structure of the STM head, were determined. The scanning electron microscope allows the precise and safe navigation of the tunneling tips on the sample surface. Multi tip spectroscopy with up to four STM units can be performed synchronously. To demonstrate the capabilities of the new-built apparatus the conductivity measurements were carried out on metallic yttrium silicide nanowires. The nanowires were prepared by the in-situ deposition of yttrium on a heated Si(110) sample surface. Current-voltage curves were recorded on the nanowires and on the wetting layer in-between. The curves indicate an existence of the Schottky barrier between the yttrium silicide nanowires and the silicon bulk. By means of the two-tip measurements with a gate, the insulating property of the Schottky barrier has been confirmed. Using this Schottky barrier, it is possible to limit the current to the nanowire and to prevent it from flowing through the silicon bulk. A four-tip resistance measurement

  16. Measurement and simulation of anisotropic magnetoresistance in single GaAs/MnAs core/shell nanowires

    International Nuclear Information System (INIS)

    Liang, J.; Wang, J.; Cooley, B. J.; Rench, D. W.; Samarth, N.; Paul, A.; Dellas, N. S.; Mohney, S. E.; Engel-Herbert, R.

    2012-01-01

    We report four probe measurements of the low field magnetoresistance (MR) in single core/shell GaAs/MnAs nanowires (NWs) synthesized by molecular beam epitaxy, demonstrating clear signatures of anisotropic magnetoresistance that track the field-dependent magnetization. A comparison with micromagnetic simulations reveals that the principal characteristics of the magnetoresistance data can be unambiguously attributed to the nanowire segments with a zinc blende GaAs core. The direct correlation between magnetoresistance, magnetization, and crystal structure provides a powerful means of characterizing individual hybrid ferromagnet/semiconductor nanostructures.

  17. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays

    KAUST Repository

    Zhai, Yujia; Palard, Marylene; Mathew, Leo; Hussain, Muhammad Mustafa; Willson, Grant Grant; Tutuc, Emanuel; Banerjee, Sanjay Kumar

    2012-01-01

    We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf

  18. Fabrication of three-dimensional MIS nano-capacitor based on nano-imprinted single crystal silicon nanowire arrays

    KAUST Repository

    Zhai, Yujia

    2012-11-26

    We report fabrication of single crystalline silicon nanowire based-three-dimensional MIS nano-capacitors for potential analog and mixed signal applications. The array of nanowires is patterned by Step and Flash Imprint Lithography (S-FIL). Deep silicon etching (DSE) is used to form the nanowires with high aspect ratio, increase the electrode area and thus significantly enhance the capacitance. High-! dielectric is deposited by highly conformal atomic layer deposition (ALD) Al2O3 over the Si nanowires, and sputtered metal TaN serves as the electrode. Electrical measurements of fabricated capacitors show the expected increase of capacitance with greater nanowire height and decreasing dielectric thickness, consistent with calculations. Leakage current and time-dependent dielectric breakdown (TDDB) are also measured and compared with planar MIS capacitors. In view of greater interest in 3D transistor architectures, such as FinFETs, 3D high density MIS capacitors offer an attractive device technology for analog and mixed signal applications. - See more at: http://www.eurekaselect.com/105099/article#sthash.EzeJxk6j.dpuf

  19. Controlled synthesis of organic single-crystalline nanowires via the synergy approach of the bottom-up/top-down processes.

    Science.gov (United States)

    Zhuo, Ming-Peng; Zhang, Ye-Xin; Li, Zhi-Zhou; Shi, Ying-Li; Wang, Xue-Dong; Liao, Liang-Sheng

    2018-03-15

    The controlled fabrication of organic single-crystalline nanowires (OSCNWs) with a uniform diameter in the nanoscale via the bottom-up approach, which is just based on weak intermolecular interaction, is a great challenge. Herein, we utilize the synergy approach of the bottom-up and the top-down processes to fabricate OSCNWs with diameters of 120 ± 10 nm through stepwise evolution processes. Specifically, the evolution processes vary from the self-assembled organic micro-rods with a quadrangular pyramid-like end-structure bounded with {111}s and {11-1}s crystal planes to the "top-down" synthesized organic micro-rods with the flat cross-sectional {002}s plane, to the organic micro-tubes with a wall thickness of ∼115 nm, and finally to the organic nanowires. Notably, the anisotropic etching process caused by the protic solvent molecules (such as ethanol) is crucial for the evolution of the morphology throughout the whole top-down process. Therefore, our demonstration opens a new avenue for the controlled-fabrication of organic nanowires, and also contributes to the development of nanowire-based organic optoelectronics such as organic nanowire lasers.

  20. Concept for room temperature single-spin tunneling force microscopy with atomic spatial resolution

    Science.gov (United States)

    Payne, Adam

    A study of a force detected single-spin magnetic resonance measurement concept with atomic spatial resolution is presented. The method is based upon electrostatic force detection of spin-selection rule controlled single electron tunneling between two electrically isolated paramagnetic states. Single-spin magnetic resonance detection is possible by measuring the force detected tunneling charge noise on and off spin resonance. Simulation results of this charge noise, based upon physical models of the tunneling and spin physics, are directly compared to measured atomic force microscopy (AFM) system noise. The results show that the approach could provide single-spin measurement of electrically isolated defect states with atomic spatial resolution at room temperature.

  1. Atomic-resolution single-spin magnetic resonance detection concept based on tunneling force microscopy

    Science.gov (United States)

    Payne, A.; Ambal, K.; Boehme, C.; Williams, C. C.

    2015-05-01

    A study of a force detected single-spin magnetic resonance measurement concept with atomic spatial resolution is presented. The method is based upon electrostatic force detection of spin-selection rule controlled single-electron tunneling between two electrically isolated paramagnetic states. Single-spin magnetic resonance detection is possible by measuring the force detected tunneling charge noise on and off spin resonance. Simulation results of this charge noise, based upon physical models of the tunneling and spin physics, are directly compared to measured atomic force microscopy system noise. The results show that the approach could provide single-spin measurement of electrically isolated qubit states with atomic spatial resolution at room temperature.

  2. Radiation- and phonon-bottleneck--induced tunneling in the Fe8 single-molecule magnet

    Science.gov (United States)

    Bal, M.; Friedman, Jonathan R.; Chen, W.; Tuominen, M. T.; Beedle, C. C.; Rumberger, E. M.; Hendrickson, D. N.

    2008-04-01

    We measure magnetization changes in a single crystal of the single-molecule magnet Fe8 when exposed to intense, short (spin dynamics, allowing observation of thermally assisted resonant tunneling between spin states at the 100 ns time scale. Detailed numerical simulations quantitatively reproduce the data and yield a spin-phonon relaxation time T1~40 ns.

  3. Room temperature strong coupling effects from single ZnO nanowire microcavity

    KAUST Repository

    Das, Ayan

    2012-05-01

    Strong coupling effects in a dielectric microcavity with a single ZnO nanowire embedded in it have been investigated at room temperature. A large Rabi splitting of ?100 meV is obtained from the polariton dispersion and a non-linearity in the polariton emission characteristics is observed at room temperature with a low threshold of 1.63 ?J/cm2, which corresponds to a polariton density an order of magnitude smaller than that for the Mott transition. The momentum distribution of the lower polaritons shows evidence of dynamic condensation and the absence of a relaxation bottleneck. The polariton relaxation dynamics were investigated by timeresolved measurements, which showed a progressive decrease in the polariton relaxation time with increase in polariton density. © 2012 Optical Society of America.

  4. Polarization Dependence of Surface Enhanced Raman Scattering on a Single Dielectric Nanowire

    Directory of Open Access Journals (Sweden)

    Hua Qi

    2012-01-01

    Full Text Available Our measurements of surface enhanced Raman scattering (SERS on Ga2O3 dielectric nanowires (NWs core/silver composites indicate that the SERS enhancement is highly dependent on the polarization direction of the incident laser light. The polarization dependence of the SERS signal with respect to the direction of a single NW was studied by changing the incident light angle. Further investigations demonstrate that the SERS intensity is not only dependent on the direction and wavelength of the incident light, but also on the species of the SERS active molecule. The largest signals were observed on an NW when the incident 514.5 nm light was polarized perpendicular to the length of the NW, while the opposite phenomenon was observed at the wavelength of 785 nm. Our theoretical simulations of the polarization dependence at 514.5 nm and 785 nm are in good agreement with the experimental results.

  5. Single ZnO nanowire-PZT optothermal field effect transistors.

    Science.gov (United States)

    Hsieh, Chun-Yi; Lu, Meng-Lin; Chen, Ju-Ying; Chen, Yung-Ting; Chen, Yang-Fang; Shih, Wan Y; Shih, Wei-Heng

    2012-09-07

    A new type of pyroelectric field effect transistor based on a composite consisting of single zinc oxide nanowire and lead zirconate titanate (ZnO NW-PZT) has been developed. Under infrared (IR) laser illumination, the transconductance of the ZnO NW can be modulated by optothermal gating. The drain current can be increased or decreased by IR illumination depending on the polarization orientation of the Pb(Zr(0.3)Ti(0.7))O(3) (PZT) substrate. Furthermore, by combining the photocurrent behavior in the UV range and the optothermal gating effect in the IR range, the wide spectrum of response of current by light offers a variety of opportunities for nanoscale optoelectronic devices.

  6. Spin- and energy-dependent tunneling through a single molecule with intramolecular spatial resolution.

    Science.gov (United States)

    Brede, Jens; Atodiresei, Nicolae; Kuck, Stefan; Lazić, Predrag; Caciuc, Vasile; Morikawa, Yoshitada; Hoffmann, Germar; Blügel, Stefan; Wiesendanger, Roland

    2010-07-23

    We investigate the spin- and energy-dependent tunneling through a single organic molecule (CoPc) adsorbed on a ferromagnetic Fe thin film, spatially resolved by low-temperature spin-polarized scanning tunneling microscopy. Interestingly, the metal ion as well as the organic ligand show a significant spin dependence of tunneling current flow. State-of-the-art ab initio calculations including also van der Waals interactions reveal a strong hybridization of molecular orbitals and substrate 3d states. The molecule is anionic due to a transfer of one electron, resulting in a nonmagnetic (S=0) state. Nevertheless, tunneling through the molecule exhibits a pronounced spin dependence due to spin-split molecule-surface hybrid states.

  7. Single Nanostructure Electrochemical Devices for Studying Electronic Properties and Structural Changes in Lithiated Si Nanowires

    KAUST Repository

    McDowell, Matthew T.; Cui, Yi

    2011-01-01

    Nanostructured Si is a promising anode material for the next generation of Li-ion batteries, but few studies have focused on the electrical properties of the Li-Si alloy phase, which are important for determining power capabilities and ensuring sufficient electrical conduction in the electrode structure. Here, we demonstrate an electrochemical device framework suitable for testing the electrical properties of single Si nanowires (NWs) at different lithiation states and correlating these properties with structural changes via transmission electron microscopy (TEM). We fi nd that single Si NWs usually exhibit Ohmic I - V response in the lithiated state, with conductivities two to three orders of magnitude higher than in the delithiated state. After a number of sequential lithiation/delithiation cycles, the single NWs show similar conductivity after each lithiation step but show large variations in conductivity in the delithiated state. Finally, devices with groups of NWs in physical contact were fabricated, and structural changes in the NWs were observed after lithiation to investigate how the electrical resistance of NW junctions and the NWs themselves affect the lithiation behavior. The results suggest that electrical resistance of NW junctions can limit lithiation. Overall, this study shows the importance of investigating the electronic properties of individual components of a battery electrode (single nanostructures in this case) along with studying the nature of interactions within a collection of these component structures. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  8. Single Nanostructure Electrochemical Devices for Studying Electronic Properties and Structural Changes in Lithiated Si Nanowires

    KAUST Repository

    McDowell, Matthew T.

    2011-07-19

    Nanostructured Si is a promising anode material for the next generation of Li-ion batteries, but few studies have focused on the electrical properties of the Li-Si alloy phase, which are important for determining power capabilities and ensuring sufficient electrical conduction in the electrode structure. Here, we demonstrate an electrochemical device framework suitable for testing the electrical properties of single Si nanowires (NWs) at different lithiation states and correlating these properties with structural changes via transmission electron microscopy (TEM). We fi nd that single Si NWs usually exhibit Ohmic I - V response in the lithiated state, with conductivities two to three orders of magnitude higher than in the delithiated state. After a number of sequential lithiation/delithiation cycles, the single NWs show similar conductivity after each lithiation step but show large variations in conductivity in the delithiated state. Finally, devices with groups of NWs in physical contact were fabricated, and structural changes in the NWs were observed after lithiation to investigate how the electrical resistance of NW junctions and the NWs themselves affect the lithiation behavior. The results suggest that electrical resistance of NW junctions can limit lithiation. Overall, this study shows the importance of investigating the electronic properties of individual components of a battery electrode (single nanostructures in this case) along with studying the nature of interactions within a collection of these component structures. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Self-assembly of single "square" quantum rings in gold-free GaAs nanowires.

    Science.gov (United States)

    Zha, Guowei; Shang, Xiangjun; Su, Dan; Yu, Ying; Wei, Bin; Wang, Li; Li, Mifeng; Wang, Lijuan; Xu, Jianxing; Ni, Haiqiao; Ji, Yuan; Sun, Baoquan; Niu, Zhichuan

    2014-03-21

    Single nanostructures embedded within nanowires (NWs) represent one of the most promising technologies for applications in quantum photonics. However, fabrication imperfections and etching-induced defects are inevitable for top-down fabrications, whereas self-assembly bottom-up approaches cannot avoid the difficulties of its stochastic nature and are limited to restricted heterogeneous material systems. Here we demonstrate the versatile self-assembly of single "square" quantum rings (QR) on the sidewalls of gold-free GaAs NWs for the first time. By tuning the deposition temperature, As overpressure and amount of gallium-droplets, we were able to control the density and morphology of the structure, yielding novel single quantum dots, QR, coupled QRs, and nano-antidots. A proposed model based on a strain-driven, transport-dependent nucleation of gallium droplets at high temperature accounts for the formation mechanism of these structures. We achieved a single-QR-in-NW structure, of which the optical properties were analyzed using micro-photoluminescence at 10 K and a spatially resolved cathodoluminescence technique at 77 K. The spectra show sharp discrete peaks; of these peaks, the narrowest linewidth (separation) was 578 μeV (1-3 meV), reflecting the quantized nature of the ring-type electronic states.

  10. Metal-Insulator-Metal Single Electron Transistors with Tunnel Barriers Prepared by Atomic Layer Deposition

    Directory of Open Access Journals (Sweden)

    Golnaz Karbasian

    2017-03-01

    Full Text Available Single electron transistors are nanoscale electron devices that require thin, high-quality tunnel barriers to operate and have potential applications in sensing, metrology and beyond-CMOS computing schemes. Given that atomic layer deposition is used to form CMOS gate stacks with low trap densities and excellent thickness control, it is well-suited as a technique to form a variety of tunnel barriers. This work is a review of our recent research on atomic layer deposition and post-fabrication treatments to fabricate metallic single electron transistors with a variety of metals and dielectrics.

  11. Extracting random numbers from quantum tunnelling through a single diode.

    Science.gov (United States)

    Bernardo-Gavito, Ramón; Bagci, Ibrahim Ethem; Roberts, Jonathan; Sexton, James; Astbury, Benjamin; Shokeir, Hamzah; McGrath, Thomas; Noori, Yasir J; Woodhead, Christopher S; Missous, Mohamed; Roedig, Utz; Young, Robert J

    2017-12-19

    Random number generation is crucial in many aspects of everyday life, as online security and privacy depend ultimately on the quality of random numbers. Many current implementations are based on pseudo-random number generators, but information security requires true random numbers for sensitive applications like key generation in banking, defence or even social media. True random number generators are systems whose outputs cannot be determined, even if their internal structure and response history are known. Sources of quantum noise are thus ideal for this application due to their intrinsic uncertainty. In this work, we propose using resonant tunnelling diodes as practical true random number generators based on a quantum mechanical effect. The output of the proposed devices can be directly used as a random stream of bits or can be further distilled using randomness extraction algorithms, depending on the application.

  12. Transport Phenomena in Nanowires, Nanotubes, and Other Low-Dimensional Systems

    KAUST Repository

    Montes Muñ oz, Enrique

    2017-01-01

    and their dependence on the nanowire growth direction, diameter, and length. At equilibrium Au-nanowire distance we find strong electronic coupling between electrodes and nanowire, resulting in low contact resistance. For the tunneling regime, the decay

  13. Fano Description of Single-Hydrocarbon Fluorescence Excited by a Scanning Tunneling Microscope.

    Science.gov (United States)

    Kröger, Jörg; Doppagne, Benjamin; Scheurer, Fabrice; Schull, Guillaume

    2018-06-13

    The detection of fluorescence with submolecular resolution enables the exploration of spatially varying photon yields and vibronic properties at the single-molecule level. By placing individual polycyclic aromatic hydrocarbon molecules into the plasmon cavity formed by the tip of a scanning tunneling microscope and a NaCl-covered Ag(111) surface, molecular light emission spectra are obtained that unravel vibrational progression. In addition, light spectra unveil a signature of the molecule even when the tunneling current is injected well separated from the molecular emitter. This signature exhibits a distance-dependent Fano profile that reflects the subtle interplay between inelastic tunneling electrons, the molecular exciton and localized plasmons in at-distance as well as on-molecule fluorescence. The presented findings open the path to luminescence of a different class of molecules than investigated before and contribute to the understanding of single-molecule luminescence at surfaces in a unified picture.

  14. Composition-graded nanowire solar cells fabricated in a single process for spectrum-splitting photovoltaic systems.

    Science.gov (United States)

    Caselli, Derek; Liu, Zhicheng; Shelhammer, David; Ning, Cun-Zheng

    2014-10-08

    Nanomaterials such as semiconductor nanowires have unique features that could enable novel optoelectronic applications such as novel solar cells. This paper aims to demonstrate one such recently proposed concept: Monolithically Integrated Laterally Arrayed Multiple Band gap (MILAMB) solar cells for spectrum-splitting photovoltaic systems. Two cells with different band gaps were fabricated simultaneously in the same process on a single substrate using spatially composition-graded CdSSe alloy nanowires grown by the Dual-Gradient Method in a chemical vapor deposition system. CdSSe nanowire ensemble devices tested under 1 sun AM1.5G illumination achieved open-circuit voltages up to 307 and 173 mV and short-circuit current densities as high as 0.091 and 0.974 mA/cm(2) for the CdS- and CdSe-rich cells, respectively. The open-circuit voltages were roughly three times those of similar CdSSe film cells fabricated for comparison due to the superior optical quality of the nanowires. I-V measurements were also performed using optical filters to simulate spectrum-splitting. The open-circuit voltages and fill factors of the CdS-rich subcells were uniformly larger than the corresponding CdSe-rich cells for similar photon flux, as expected. This suggests that if all wires can be contacted, the wide-gap cell is expected to have greater output power than the narrow-gap cell, which is the key to achieving high efficiencies with spectrum-splitting. This paper thus provides the first proof-of-concept demonstration of simultaneous fabrication of MILAMB solar cells. This approach to solar cell fabrication using single-crystal nanowires for spectrum-splitting photovoltaics could provide a future low-cost high-efficiency alternative to the conventional high-cost high-efficiency tandem cells.

  15. Radial composition of single InGaN nanowires: a combined study by EDX, Raman spectroscopy, and X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Gomez-Gomez, M.; Garro, N.; Cantarero, A. [Institut de Ciencia dels Materials, Universitat de Valencia, Paterna (Spain); Segura-Ruiz, J.; Martinez-Criado, G.; Chu, M.H. [European Synchrotron Radiation Facility, Experiments Division, Grenoble (France); Denker, C.; Malindretos, J.; Rizzi, A. [IV. Physikalisches Institut, Georg-August-Universitaet Goettingen (Germany)

    2013-10-15

    The radial alloy distribution of In{sub x} Ga{sub 1-x}N nanowires grown by plasma-assisted molecular beam epitaxy has been investigated by three different techniques with nanometric spatial resolution and capability to study single nanowires. Energy-dispersive X-ray spectroscopy radial line-scans revealed a gradient in the alloy composition of individual nanowires. Resonant Raman scattering and spatially resolved X-ray diffraction showed the existence of three distinctive regions with different alloy composition. The combination of the three techniques provides robust evidence of the spontaneous formation of a core-shell structure with a thin Ga-richer shell wrapping an In-rich core at the bottom part of the nanowires. This composition-modulated nanostructure offers an attractive way to explore new device concepts in fully epitaxial nanowire-based solar cells. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  16. Radial composition of single InGaN nanowires: a combined study by EDX, Raman spectroscopy, and X-ray diffraction

    International Nuclear Information System (INIS)

    Gomez-Gomez, M.; Garro, N.; Cantarero, A.; Segura-Ruiz, J.; Martinez-Criado, G.; Chu, M.H.; Denker, C.; Malindretos, J.; Rizzi, A.

    2013-01-01

    The radial alloy distribution of In x Ga 1-x N nanowires grown by plasma-assisted molecular beam epitaxy has been investigated by three different techniques with nanometric spatial resolution and capability to study single nanowires. Energy-dispersive X-ray spectroscopy radial line-scans revealed a gradient in the alloy composition of individual nanowires. Resonant Raman scattering and spatially resolved X-ray diffraction showed the existence of three distinctive regions with different alloy composition. The combination of the three techniques provides robust evidence of the spontaneous formation of a core-shell structure with a thin Ga-richer shell wrapping an In-rich core at the bottom part of the nanowires. This composition-modulated nanostructure offers an attractive way to explore new device concepts in fully epitaxial nanowire-based solar cells. (copyright 2013 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  17. One-by-one single-molecule detection of mutated nucleobases by monitoring tunneling current using a DNA tip.

    Science.gov (United States)

    Bui, Phuc Tan; Nishino, Tomoaki; Shiigi, Hiroshi; Nagaoka, Tsutomu

    2015-01-31

    A DNA molecule was utilized as a probe tip to achieve single-molecule genetic diagnoses. Hybridization of the probe and target DNAs resulted in electron tunneling along the emergent double-stranded DNA. Simple stationary monitoring of the tunneling current leads to single-molecule DNA detection and discovery of base mismatches and methylation.

  18. Submolecular Electronic Mapping of Single Cysteine Molecules by in Situ Scanning Tunneling Imaging

    DEFF Research Database (Denmark)

    Zhang, Jingdong; Chi, Qijin; Nazmutdinov, R. R.

    2009-01-01

    We have used L-Cysteine (Cys) as a model system to study the surface electronic structures of single molecules at the submolecular level in aqueous buffer solution by a combination of electrochemical scanning tunneling microscopy (in situ STM), electrochemistry including voltammetry and chronocou...

  19. Probing the local environment of a single OPE3 molecule using inelastic tunneling electron spectroscopy

    NARCIS (Netherlands)

    Frisenda, R.; Perrin, M.L.; Van der Zant, H.S.J.

    2015-01-01

    We study single-molecule oligo(phenylene ethynylene)dithiol junctions by means of inelastic electron tunneling spectroscopy (IETS). The molecule is contacted with gold nano-electrodes formed with the mechanically controllable break junction technique. We record the IETS spectrum of the molecule from

  20. Evaluation of the Kinetic Property of Single-Molecule Junctions by Tunneling Current Measurements.

    Science.gov (United States)

    Harashima, Takanori; Hasegawa, Yusuke; Kiguchi, Manabu; Nishino, Tomoaki

    2018-01-01

    We investigated the formation and breaking of single-molecule junctions of two kinds of dithiol molecules by time-resolved tunneling current measurements in a metal nanogap. The resulting current trajectory was statistically analyzed to determine the single-molecule conductance and, more importantly, to reveal the kinetic property of the single-molecular junction. These results suggested that combining a measurement of the single-molecule conductance and statistical analysis is a promising method to uncover the kinetic properties of the single-molecule junction.

  1. Radio frequency scanning tunneling spectroscopy for single-molecule spin resonance.

    Science.gov (United States)

    Müllegger, Stefan; Tebi, Stefano; Das, Amal K; Schöfberger, Wolfgang; Faschinger, Felix; Koch, Reinhold

    2014-09-26

    We probe nuclear and electron spins in a single molecule even beyond the electromagnetic dipole selection rules, at readily accessible magnetic fields (few mT) and temperatures (5 K) by resonant radio-frequency current from a scanning tunneling microscope. We achieve subnanometer spatial resolution combined with single-spin sensitivity, representing a 10 orders of magnitude improvement compared to existing magnetic resonance techniques. We demonstrate the successful resonant spectroscopy of the complete manifold of nuclear and electronic magnetic transitions of up to ΔI(z)=±3 and ΔJ(z)=±12 of single quantum spins in a single molecule. Our method of resonant radio-frequency scanning tunneling spectroscopy offers, atom-by-atom, unprecedented analytical power and spin control with an impact on diverse fields of nanoscience and nanotechnology.

  2. Thin films of metal oxides on metal single crystals: Structure and growth by scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Galloway, H.C.

    1995-12-01

    Detailed studies of the growth and structure of thin films of metal oxides grown on metal single crystal surfaces using Scanning Tunneling Microscopy (STM) are presented. The oxide overlayer systems studied are iron oxide and titanium oxide on the Pt(III) surface. The complexity of the metal oxides and large lattice mismatches often lead to surface structures with large unit cells. These are particularly suited to a local real space technique such as scanning tunneling microscopy. In particular, the symmetry that is directly observed with the STM elucidates the relationship of the oxide overlayers to the substrate as well as distinguishing, the structures of different oxides

  3. Conductance of single atoms and molecules studied with a scanning tunnelling microscope

    International Nuclear Information System (INIS)

    Neel, N; Kroeger, J; Limot, L; Berndt, R

    2007-01-01

    The conductance of single atoms and molecules is investigated with a low-temperature scanning tunnelling microscope. In a controlled and reproducible way, clean Ag(111) surfaces, individual silver atoms on Ag(111) as well as individual C 60 molecules adsorbed on Cu(100) are contacted with the tip of the microscope. Upon contact the conductance changes discontinuously in the case of the tip-surface junction while the tip-atom and tip-molecule junctions exhibit a continuous transition from the tunnelling to the contact regime

  4. Observation of negative differential resistance and single-electron tunneling in electromigrated break junctions

    International Nuclear Information System (INIS)

    Noguchi, Yutaka; Ueda, Rieko; Kubota, Tohru; Kamikado, Toshiya; Yokoyama, Shiyoshi; Nagase, Takashi

    2008-01-01

    We observed a negative differential resistance (NDR) along with single-electron tunneling (SET) in the electron transport of electromigrated break junctions with metal-free tetraphenylporphyrin (H 2 BSTBPP) at a temperature of 11 K. The NDR strongly depended on the applied gate voltages, and appeared only in the electron tunneling region of the Coulomb diamond. We could explain the mechanism of this new type of electron transport by a model assuming a molecular Coulomb island and local density of states of the source and the drain electrodes

  5. Controllable resonant tunnelling through single-point potentials: A point triode

    International Nuclear Information System (INIS)

    Zolotaryuk, A.V.; Zolotaryuk, Yaroslav

    2015-01-01

    A zero-thickness limit of three-layer heterostructures under two bias voltages applied externally, where one of which is supposed to be a gate parameter, is studied. As a result, an effect of controllable resonant tunnelling of electrons through single-point potentials is shown to exist. Therefore the limiting structure may be termed a “point triode” and considered in the theory of point interactions as a new object. The simple limiting analytical expressions adequately describe the resonant behaviour in the transistor with realistic parameter values and thus one can conclude that the zero-range limit of multi-layer structures may be used in fabricating nanodevices. The difference between the resonant tunnelling across single-point potentials and the Fabry–Pérot interference effect is also emphasized. - Highlights: • The zero-thickness limit of three-layer heterostructures is described in terms of point interactions. • The effect of resonant tunnelling through these single-point potentials is established. • The resonant tunnelling is shown to be controlled by a gate voltage

  6. Analytical calculation of spin tunneling effect in single molecule magnet Fe8 with considering quadrupole excitation

    Directory of Open Access Journals (Sweden)

    Y Yousefi

    2018-02-01

    Full Text Available Spin tunneling effect in Single Molecule Magnet Fe8 is studied by instanton calculation technique using SU(3 generalized spin coherent state in real parameter as a trial function. For this SMM, tunnel splitting arises due to the presence of a Berry like phase in action, which causes interference between tunneling trajectories (instantons. For this SMM, it is established that the use of quadrupole excitation (g dependence changes not only the location of the quenching points, but also the number of these points. Also, these quenching points are the steps in hysteresis loops of this SMM. If dipole and quadrupole excitations in classical energy considered, the number of these steps equals to the number that obtained from experimental data.

  7. Tetrairon(III) Single Molecule Magnet Studied by Scanning Tunneling Microscopy and Spectroscopy

    Science.gov (United States)

    Oh, Youngtek; Jeong, Hogyun; Lee, Minjun; Kwon, Jeonghoon; Yu, Jaejun; Mamun, Shariful Islam; Gupta, Gajendra; Kim, Jinkwon; Kuk, Young

    2011-03-01

    Tetrairon(III) single-molecule magnet (SMM) on a clean Au(111) has studied using scanning tunneling microscopy (STM) and spectroscopy (STS) to understand quantum mechanical tunneling of magnetization and hysteresis of pure molecular origin. Before the STM studies, elemental analysis, proton nuclear magnetic resonance (NMR) measurement and Energy Dispersive X- ray Spectroscopy (EDS) were carried out to check the robustness of the sample. The STM image of this molecule shows a hexagonal shape, with a phenyl ring at the center and surrounding six dipivaloylmethane ligands. Two peaks are observed at 0.5 eV, 1.5 eV in the STS results, agreeing well with the first principles calculations. Spin-polarized scanning tunneling microscopy (SPSTM) measurements have been performed with a magnetic tip to get the magnetization image of the SMM. We could observe the antiferromagnetic coupling and a centered- triangular topology with six alkoxo bridges inside the molecule while applying external magnetic fields.

  8. Single-charge tunneling in ambipolar silicon quantum dots

    NARCIS (Netherlands)

    Müller, Filipp

    2015-01-01

    Spin qubits in coupled quantum dots (QDs) are promising for future quantum information processing (QIP). A quantum bit (qubit) is the quantum mechanical analogon of a classical bit. In general, each quantum mechanical two-level system can represent a qubit. For the spin of a single charge carrier

  9. Suppression of Magnetic Quantum Tunneling in a Chiral Single-Molecule Magnet by Ferromagnetic Interactions.

    Science.gov (United States)

    Lippert, Kai-Alexander; Mukherjee, Chandan; Broschinski, Jan-Philipp; Lippert, Yvonne; Walleck, Stephan; Stammler, Anja; Bögge, Hartmut; Schnack, Jürgen; Glaser, Thorsten

    2017-12-18

    Single-molecule magnets (SMMs) retain a magnetization without applied magnetic field for a decent time due to an energy barrier U for spin-reversal. Despite the success to increase U, the difficult to control magnetic quantum tunneling often leads to a decreased effective barrier U eff and a fast relaxation. Here, we demonstrate the influence of the exchange coupling on the tunneling probability in two heptanuclear SMMs hosting the same spin-system with the same high spin ground state S t = 21/2. A chirality-induced symmetry reduction leads to a switch of the Mn III -Mn III exchange from antiferromagnetic in the achiral SMM [Mn III 6 Cr III ] 3+ to ferromagnetic in the new chiral SMM RR [Mn III 6 Cr III ] 3+ . Multispin Hamiltonian analysis by full-matrix diagonalization demonstrates that the ferromagnetic interactions in RR [Mn III 6 Cr III ] 3+ enforce a well-defined S t = 21/2 ground state with substantially less mixing of M S substates in contrast to [Mn III 6 Cr III ] 3+ and no tunneling pathways below the top of the energy barrier. This is experimentally verified as U eff is smaller than the calculated energy barrier U in [Mn III 6 Cr III ] 3+ due to tunneling pathways, whereas U eff equals U in RR [Mn III 6 Cr III ] 3+ demonstrating the absence of quantum tunneling.

  10. Nanowire decorated, ultra-thin, single crystalline silicon for photovoltaic devices.

    Science.gov (United States)

    Aurang, Pantea; Turan, Rasit; Unalan, Husnu Emrah

    2017-10-06

    Reducing silicon (Si) wafer thickness in the photovoltaic industry has always been demanded for lowering the overall cost. Further benefits such as short collection lengths and improved open circuit voltages can also be achieved by Si thickness reduction. However, the problem with thin films is poor light absorption. One way to decrease optical losses in photovoltaic devices is to minimize the front side reflection. This approach can be applied to front contacted ultra-thin crystalline Si solar cells to increase the light absorption. In this work, homojunction solar cells were fabricated using ultra-thin and flexible single crystal Si wafers. A metal assisted chemical etching method was used for the nanowire (NW) texturization of ultra-thin Si wafers to compensate weak light absorption. A relative improvement of 56% in the reflectivity was observed for ultra-thin Si wafers with the thickness of 20 ± 0.2 μm upon NW texturization. NW length and top contact optimization resulted in a relative enhancement of 23% ± 5% in photovoltaic conversion efficiency.

  11. Electrical transport of bottom-up grown single-crystal Si1-xGex nanowire

    International Nuclear Information System (INIS)

    Yang, W F; Lee, S J; Liang, G C; Whang, S J; Kwong, D L

    2008-01-01

    In this work, we fabricated an Si 1-x Ge x nanowire (NW) metal-oxide-semiconductor field-effect transistor (MOSFET) by using bottom-up grown single-crystal Si 1-x Ge x NWs integrated with HfO 2 gate dielectric, TaN/Ta gate electrode and Pd Schottky source/drain electrodes, and investigated the electrical transport properties of Si 1-x Ge x NWs. It is found that both undoped and phosphorus-doped Si 1-x Ge x NW MOSFETs exhibit p-MOS operation while enhanced performance of higher I on ∼100 nA and I on /I off ∼10 5 are achieved from phosphorus-doped Si 1-x Ge x NWs, which can be attributed to the reduction of the effective Schottky barrier height (SBH). Further improvement in gate control with a subthreshold slope of 142 mV dec -1 was obtained by reducing HfO 2 gate dielectric thickness. A comprehensive study on SBH between the Si 1-x Ge x NW channel and Pd source/drain shows that a doped Si 1-x Ge x NW has a lower effective SBH due to a thinner depletion width at the junction and the gate oxide thickness has negligible effect on effective SBH

  12. Significantly enhanced visible light response in single TiO2 nanowire by nitrogen ion implantation

    Science.gov (United States)

    Wu, Pengcheng; Song, Xianyin; Si, Shuyao; Ke, Zunjian; Cheng, Li; Li, Wenqing; Xiao, Xiangheng; Jiang, Changzhong

    2018-05-01

    The metal-oxide semiconductor TiO2 shows enormous potential in the field of photoelectric detection; however, UV-light absorption only restricts its widespread application. It is considered that nitrogen doping can improve the visible light absorption of TiO2, but the effect of traditional chemical doping is far from being used for visible light detection. Herein, we dramatically broadened the absorption spectrum of the TiO2 nanowire (NW) by nitrogen ion implantation and apply the N-doped single TiO2 NW to visible light detection for the first time. Moreover, this novel strategy effectively modifies the surface states and thus regulates the height of Schottky barriers at the metal/semiconductor interface, which is crucial to realizing high responsivity and a fast response rate. Under the illumination of a laser with a wavelength of 457 nm, our fabricated photodetector exhibits favorable responsivity (8 A W-1) and a short response time (0.5 s). These results indicate that ion implantation is a promising method in exploring the visible light detection of TiO2.

  13. Single InAs/GaSb nanowire low-power CMOS inverter.

    Science.gov (United States)

    Dey, Anil W; Svensson, Johannes; Borg, B Mattias; Ek, Martin; Wernersson, Lars-Erik

    2012-11-14

    III-V semiconductors have so far predominately been employed for n-type transistors in high-frequency applications. This development is based on the advantageous transport properties and the large variety of heterostructure combinations in the family of III-V semiconductors. In contrast, reports on p-type devices with high hole mobility suitable for complementary metal-oxide-semiconductor (CMOS) circuits for low-power operation are scarce. In addition, the difficulty to integrate both n- and p-type devices on the same substrate without the use of complex buffer layers has hampered the development of III-V based digital logic. Here, inverters fabricated from single n-InAs/p-GaSb heterostructure nanowires are demonstrated in a simple processing scheme. Using undoped segments and aggressively scaled high-κ dielectric, enhancement mode operation suitable for digital logic is obtained for both types of transistors. State-of-the-art on- and off-state characteristics are obtained and the individual long-channel n- and p-type transistors exhibit minimum subthreshold swings of SS = 98 mV/dec and SS = 400 mV/dec, respectively, at V(ds) = 0.5 V. Inverter characteristics display a full signal swing and maximum gain of 10.5 with a small device-to-device variability. Complete inversion is measured at low frequencies although large parasitic capacitances deform the waveform at higher frequencies.

  14. Design principles for single standing nanowire solar cells: going beyond the planar efficiency limits.

    Science.gov (United States)

    Zeng, Yang; Ye, Qinghao; Shen, Wenzhong

    2014-05-09

    Semiconductor nanowires (NWs) have long been used in photovoltaic applications but restricted to approaching the fundamental efficiency limits of the planar devices with less material. However, recent researches on standing NWs have started to reveal their potential of surpassing these limits when their unique optical property is utilized in novel manners. Here, we present a theoretical guideline for maximizing the conversion efficiency of a single standing NW cell based on a detailed study of its optical absorption mechanism. Under normal incidence, a standing NW behaves as a dielectric resonator antenna, and its optical cross-section shows its maximum when the lowest hybrid mode (HE11δ) is excited along with the presence of a back-reflector. The promotion of the cell efficiency beyond the planar limits is attributed to two effects: the built-in concentration caused by the enlarged optical cross-section, and the shifting of the absorption front resulted from the excited mode profile. By choosing an optimal NW radius to support the HE11δ mode within the main absorption spectrum, we demonstrate a relative conversion-efficiency enhancement of 33% above the planar cell limit on the exemplary a-Si solar cells. This work has provided a new basis for designing and analyzing standing NW based solar cells.

  15. Oriented nano-wire formation and selective adhesion on substrates by single ion track reaction in polysilanes

    International Nuclear Information System (INIS)

    Shu Seki; Satoshi Tsukuda, Yoichi Yoshida; Seiichi Tagawa; Masaki Sugimoto; Shigeru Tanaka

    2002-01-01

    1-D nano-sized materials such as carbon nanotubes have attracted much attention as ideal quantum wires for future manufacturing techniques of nano-scaled opto-electronic devices. However it is still difficult to control the sizes, spatial distributions, or positions of nanotubes by conventional synthetic techniques to date. The MeV order heavy ion beams causes ultra-high density energy deposition which can not be realized by any other techniques (lasers, H, etc), and penetrate the polymer target straighforward as long as 1∼100 m depth. the energy deposited area produces non-homogeneous field can be controlled by changing the energy deposition rate of incident ions (LET: linear energy transfer, eV/nm). We found that cross-linking reaction of polysilane derivatives was predominantly caused and gave nano-gel in the chemical core, unlike main chain scission occurring at the outside of the area. high density energy deposition by ion beams causes non-homogeneous crosslinking reaction of polysilane derivatives within a nano-sized cylindrical area along an ion trajectory, and gives -SiC based nano-wires of which sizes (length, thickness) and number densities are completely under control by changing the parameters of incident ion beams and molecular sizes of target polymers. based on the concept pf the single track gelation, the present study demonstrates the formation of cross-linked polysilane nano-wires with the fairly controlled sizes. Recently the techniques of position-selective single ion hitting have been developed for MeV order ion beams, however it is not sufficient to control precisely the positions of the nano-wires on the substrates within sub- m area. in the present study, we report the selective adhesion of anno-wires on Si substrates by the surface treatments before coating, which enables the patterning of planted nano-wires on substrates and/or electrodes as candidates for nano-sized field emissive cathodes or electro-luminescent devices. Some examples of

  16. Decoupling single nanowire mobilities limited by surface scattering and bulk impurity scattering

    International Nuclear Information System (INIS)

    Khanal, D. R.; Levander, A. X.; Wu, J.; Yu, K. M.; Liliental-Weber, Z.; Walukiewicz, W.; Grandal, J.; Sanchez-Garcia, M. A.; Calleja, E.

    2011-01-01

    We demonstrate the isolation of two free carrier scattering mechanisms as a function of radial band bending in InN nanowires via universal mobility analysis, where effective carrier mobility is measured as a function of effective electric field in a nanowire field-effect transistor. Our results show that Coulomb scattering limits effective mobility at most effective fields, while surface roughness scattering only limits mobility under very high internal electric fields. High-energy α particle irradiation is used to vary the ionized donor concentration, and the observed decrease in mobility and increase in donor concentration are compared to Hall effect results of high-quality InN thin films. Our results show that for nanowires with relatively high doping and large diameters, controlling Coulomb scattering from ionized dopants should be given precedence over surface engineering when seeking to maximize nanowire mobility.

  17. Optical properties of single wurtzite/zinc-blende ZnSe nanowires grown at low temperature

    Energy Technology Data Exchange (ETDEWEB)

    Zannier, V. [IOM-CNR Laboratorio TASC, S. S. 14, Km. 163.5, I-34149 Trieste (Italy); Department of Physics, University of Trieste, Via Valerio 2, I-34127 Trieste (Italy); Cremel, T.; Kheng, K. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CEA, INAC-SP2M, « Nanophysique et Semiconducteurs » Group, F-38000 Grenoble (France); Artioli, A.; Ferrand, D. [Univ. Grenoble Alpes, F-38000 Grenoble (France); CNRS, Institut Néel, « Nanophysique et Semiconducteurs » Group, F-38000 Grenoble (France); Grillo, V. [IMEM-CNR, Parco Area delle Scienze 37/A, I-43010 Parma (Italy); S3 NANO-CNR, Via Campi 213/A, I-41125 Modena (Italy); Rubini, S. [IOM-CNR Laboratorio TASC, S. S. 14, Km. 163.5, I-34149 Trieste (Italy)

    2015-09-07

    ZnSe nanowires with a dominant wurtzite structure have been grown at low temperature (300 °C) by molecular beam epitaxy assisted by solid Au nanoparticles. The nanowires emission is polarized perpendicularly to their axis in agreement with the wurtzite selection rules. Alternations of wurtzite and zinc-blende regions have been observed by transmission electron microscopy, and their impact on the nanowires optical properties has been studied by microphotoluminescence. The nanowires show a dominant intense near-band-edge emission as well as the ZnSe wurtzite free exciton line. A type II band alignment between zinc-blende and wurtzite ZnSe is evidenced by time-resolved photoluminescence. From this measurement, we deduce values for the conduction and valence band offsets of 98 and 50 meV, respectively.

  18. Size and temperature dependent stability and phase transformation in single-crystal zirconium nanowire

    International Nuclear Information System (INIS)

    Sutrakar, Vijay Kumar; Roy Mahapatra, D.

    2011-01-01

    A novel size dependent FCC (face-centered-cubic) → HCP (hexagonally-closed-pack) phase transformation and stability of an initial FCC zirconium nanowire are studied. FCC zirconium nanowires with cross-sectional dimensions 20 Å, in which surface stresses are not enough to drive the phase transformation, show meta-stability. In such a case, an external kinetic energy in the form of thermal heating is required to overcome the energy barrier and achieve FCC → HCP phase transformation. The FCC-HCP transition pathway is also studied using Nudged Elastic Band (NEB) method, to further confirm the size dependent stability/metastability of Zr nanowires. We also show size dependent critical temperature, which is required for complete phase transformation of a metastable-FCC nanowire.

  19. Electron-assisted magnetization tunneling in single spin systems

    Science.gov (United States)

    Balashov, Timofey; Karlewski, Christian; Märkl, Tobias; Schön, Gerd; Wulfhekel, Wulf

    2018-01-01

    Magnetic excitations of single atoms on surfaces have been widely studied experimentally in the past decade. Lately, systems with unprecedented magnetic stability started to emerge. Here, we present a general theoretical investigation of the stability of rare-earth magnetic atoms exposed to crystal or ligand fields of various symmetry and to exchange scattering with an electron bath. By analyzing the properties of the atomic wave function, we show that certain combinations of symmetry and total angular momentum are inherently stable against first or even higher-order interactions with electrons. Further, we investigate the effect of an external magnetic field on the magnetic stability.

  20. Seed-mediated shape evolution of gold nanomaterials: from spherical nanoparticles to polycrystalline nanochains and single-crystalline nanowires

    International Nuclear Information System (INIS)

    Qiu Penghe; Mao Chuanbin

    2009-01-01

    We studied the kinetics of the reduction of a gold precursor (HAuCl 4 ) and the effect of the molar ratio (R) of sodium citrate, which was introduced from a seed solution, and the gold precursor on the shape evolution of gold nanomaterials in the presence of preformed 13 nm gold nanoparticles as seeds. The reduction of the gold precursor by sodium citrate was accelerated due to the presence of gold seeds. Nearly single-crystalline gold nanowires were formed at a very low R value (R = 0.16) in the presence of the seeds as a result of the oriented attachment of the growing gold nanoparticles. At a higher R value (R = 0.33), gold nanochains were formed due to the non-oriented attachment of gold nanoparticles. At a much higher R value (R = 1.32), only larger spherical gold nanoparticles grown from the seeds were found. In the absence of gold seeds, no single-crystalline nanowires were formed at the same R value. Our results indicate that the formation of the 1D nanostructures (nanochains and nanowires) at low R values is due to the attachment of gold nanoparticles along one direction, which is driven by the surface energy reduction, nanoparticle attraction, and dipole-dipole interaction between adjacent nanoparticles.

  1. Determination of the stacking fault density in highly defective single GaAs nanowires by means of coherent diffraction imaging

    Science.gov (United States)

    Davtyan, Arman; Biermanns, Andreas; Loffeld, Otmar; Pietsch, Ullrich

    2016-06-01

    Coherent x-ray diffraction imaging is used to measure diffraction patterns from individual highly defective nanowires, showing a complex speckle pattern instead of well-defined Bragg peaks. The approach is tested for nanowires of 500 nm diameter and 500 nm height predominately composed by zinc-blende (ZB) and twinned zinc-blende (TZB) phase domains. Phase retrieval is used to reconstruct the measured 2-dimensional intensity patterns recorded from single nanowires with 3.48 nm and 0.98 nm spatial resolution. Whereas the speckle amplitudes and distribution are perfectly reconstructed, no unique solution could be obtained for the phase structure. The number of phase switches is found to be proportional to the number of measured speckles and follows a narrow number distribution. Using data with 0.98 nm spatial resolution the mean number of phase switches is in reasonable agreement with estimates taken from TEM. However, since the resolved phase domain still is 3-4 times larger than a single GaAs bilayer we explain the non-ambiguous phase reconstruction by the fact that depending on starting phase and sequence of subroutines used during the phase retrieval the retrieved phase domain host a different sequence of randomly stacked bilayers. Modelling possible arrangements of bilayer sequences within a phase domain demonstrate that the complex speckle patterns measured can indeed be explained by the random arrangement of the ZB and TZB phase domains.

  2. Hydrothermal synthesis of ultralong and single-crystalline Cd(OH)2 nanowires using alkali salts as mineralizers.

    Science.gov (United States)

    Tang, Bo; Zhuo, Linhai; Ge, Jiechao; Niu, Jinye; Shi, Zhiqiang

    2005-04-18

    Ultralong and single-crystalline Cd(OH)(2) nanowires were fabricated by a hydrothermal method using alkali salts as mineralizers. The morphology and size of the final products strongly depend on the effects of the alkali salts (e.g., KCl, KNO(3), and K(2)SO(4) or NaCl, NaNO(3), and Na(2)SO(4)). When the salt is absent, only nanoparticles are observed in TEM images of the products. The 1D nanostructure growth method presented herein offers an excellent tool for the design of other advanced materials with anisotropic properties. In addition, the Cd(OH)(2) nanowires might act as a template or precursor that is potentially converted into 1D cadmium oxide through dehydration or into 1D nanostructures of other functional materials (e.g., CdS, CdSe).

  3. Performance and Characterization of a Modular Superconducting Nanowire Single Photon Detector System for Space-to-Earth Optical Communications Links

    Science.gov (United States)

    Vyhnalek, Brian E.; Tedder, Sarah A.; Nappier, Jennifer M.

    2018-01-01

    Space-to-ground photon-counting optical communication links supporting high data rates over large distances require enhanced ground receiver sensitivity in order to reduce the mass and power burden on the spacecraft transmitter. Superconducting nanowire single-photon detectors (SNSPDs) have been demonstrated to offer superior performance in detection efficiency, timing resolution, and count rates over semiconductor photodetectors, and are a suitable technology for high photon efficiency links. Recently photon detectors based on superconducting nanowires have become commercially available, and we have assessed the characteristics and performance of one such commercial system as a candidate for potential utilization in ground receiver designs. The SNSPD system features independent channels which can be added modularly, and we analyze the scalability of the system to support different data rates, as well as consider coupling concepts and issues as the number of channels increases.

  4. Nanowire Growth for Photovoltaics

    DEFF Research Database (Denmark)

    Holm, Jeppe Vilstrup

    Solar cells commercial success is based on an efficiency/cost calculation. Nanowire solar cells is one of the foremost candidates to implement third generation photo voltaics, which are both very efficient and cheap to produce. This thesis is about our progress towards commercial nanowire solar...... cells. Resonance effects between the light and nanowire causes an inherent concentration of the sunlight into the nanowires, and means that a sparse array of nanowires (less than 5% of the area) can absorb all the incoming light. The resonance effects, as well as a graded index of refraction, also traps...... the light. The concentration and light trapping means that single junction nanowire solar cells have a higher theoretical maximum efficiency than equivalent planar solar cells. We have demonstrated the built-in light concentration of nanowires, by growing, contacting and characterizing a solar cell...

  5. The photonic nanowire: an emerging platform for highly efficient single-photon sources for quantum information applications

    DEFF Research Database (Denmark)

    Gregersen, Niels; Munsch, Mathieu; Malik, Nitin S.

    2013-01-01

    Efficient coupling between a localized quantum emitter and a well defined optical channel represents a powerful route to realize single-photon sources and spin-photon interfaces. The tailored fiber-like photonic nanowire embedding a single quantum dot has recently demonstrated an appealing...... potential. However, the device requires a delicate, sharp needle-like taper with performance sensitive to minute geometrical details. To overcome this limitation we demonstrate the photonic trumpet, exploiting an opposite tapering strategy. The trumpet features a strongly Gaussian far-field emission...

  6. Spin quantum tunneling via entangled states in a dimer of exchange coupled single-molecule magnets

    Science.gov (United States)

    Tiron, R.; Wernsdorfer, W.; Aliaga-Alcalde, N.; Foguet-Albiol, D.; Christou, G.

    2004-03-01

    A new family of supramolecular, antiferromagnetically exchange-coupled dimers of single-molecule magnets (SMMs) has recently been reported [W. Wernsdorfer, N. Aliaga-Alcalde, D.N. Hendrickson, and G. Christou, Nature 416, 406 (2002)]. Each SMM acts as a bias on its neighbor, shifting the quantum tunneling resonances of the individual SMMs. Hysteresis loop measurements on a single crystal of SMM-dimers have now established quantum tunneling of the magnetization via entangled states of the dimer. This shows that the dimer really does behave as a quantum-mechanically coupled dimer. The transitions are well separated, suggesting long coherence times compared to the time scale of the energy splitting. This result is of great importance if such systems are to be used for quantum computing. It also allows the measurement of the longitudinal and transverse superexchange coupling constants [Phys. Rev. Lett. 91, 227203 (2003)].

  7. Photon-assisted tunneling in a Fe-8 single-molecule magnet

    OpenAIRE

    Sorace, L.; Wernsdorfer, W.; Thirion, C.; Barra, A. L.; Pacchioni, M.; Mailly, D.; Barbara, B.

    2003-01-01

    The low temperature spin dynamics of a Fe8 Single-Molecule Magnet was studied under circularly polarized electromagnetic radiation allowing us to establish clearly photon-assisted tunneling. This effect, while linear at low power, becomes highly non-linear above a relatively low power threshold. This non-linearity is attributed to the nature of the coupling of the sample to the thermostat.These results are of great importance if such systems are to be used as quantum computers.

  8. Thermoelectric-induced spin currents in single-molecule magnet tunnel junctions

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang; Wang, Ruiqiang; Wang, Baigeng; Xing, D. Y.

    2010-12-01

    A molecular spin-current generator is proposed, which consists of a single-molecule magnet (SMM) coupled to two normal metal electrodes with temperature gradient. It is shown that this tunneling junction can generate a highly spin-polarized current by thermoelectric effects, whose flowing direction and spin polarization can be changed by adjusting the gate voltage applied to the SMM. This device can be realized with current technologies and may have practical use in spintronics and quantum information.

  9. Single-step electrochemical method for producing very sharp Au scanning tunneling microscopy tips

    International Nuclear Information System (INIS)

    Gingery, David; Buehlmann, Philippe

    2007-01-01

    A single-step electrochemical method for making sharp gold scanning tunneling microscopy tips is described. 3.0M NaCl in 1% perchloric acid is compared to several previously reported etchants. The addition of perchloric acid to sodium chloride solutions drastically shortens etching times and is shown by transmission electron microscopy to produce very sharp tips with a mean radius of curvature of 15 nm

  10. Single-step synthesis of In{sub 2}O{sub 3} nanowires decorated with TeO{sub 2} nanobeads and their acetone-sensing properties

    Energy Technology Data Exchange (ETDEWEB)

    Park, Sunghoon; Kheel, Hyejoon; Sun, Gun-Joo; Lee, Chongmu [Inha University, Department of Materials Science and Engineering, Incheon (Korea, Republic of); Park, Sang Eon [Inha University, Department of Chemistry, Incheon (Korea, Republic of)

    2016-04-15

    In{sub 2}O{sub 3} nanowires decorated with TeO{sub 2} nanobeads were synthesized by a facile single-step thermal evaporation process, and their acetone-gas-sensing properties were examined. The diameters and lengths of the In{sub 2}O{sub 3} nanowires ranged from 10 to 20 nm and up to 100 μm, respectively, whereas the diameters of the TeO{sub 2} beads ranged from 50 to 200 nm. The TeO{sub 2}-decorated In{sub 2}O{sub 3} nanowire sensor showed stronger response to acetone gas than the pristine In{sub 2}O{sub 3} nanowire sensor. The pristine and TeO{sub 2}-decorated In{sub 2}O{sub 3} nanowires exhibited sensitivity of ∝10.13 and ∝24.87, respectively, to 200 ppm acetone at 300 C. The decorated nanowire sensor also showed much more rapid response and recovery than the latter. Both sensors showed the strongest response to acetone gas at 300 C, respectively. The mechanism and origin of the enhanced acetone-gas-sensing performance of the TeO{sub 2}-decorated In{sub 2}O{sub 3} nanowire sensor compared to the pristine In{sub 2}O{sub 3} nanowire sensor were discussed in detail. The enhanced sensing performance of the TeO{sub 2}-decorated In{sub 2}O{sub 3} nanowire is mainly due to the modulation of the potential barrier height at the TeO{sub 2}-In{sub 2}O{sub 3} interface, high catalytic activity of TeO{sub 2,} and creation of active adsorption sites by incorporation of TeO{sub 2}. (orig.)

  11. Single-molecule spectroscopy of amino acids and peptides by recognition tunnelling

    Science.gov (United States)

    Zhao, Yanan; Ashcroft, Brian; Zhang, Peiming; Liu, Hao; Sen, Suman; Song, Weisi; Im, Jongone; Gyarfas, Brett; Manna, Saikat; Biswas, Sovan; Borges, Chad; Lindsay, Stuart

    2014-06-01

    The human proteome has millions of protein variants due to alternative RNA splicing and post-translational modifications, and variants that are related to diseases are frequently present in minute concentrations. For DNA and RNA, low concentrations can be amplified using the polymerase chain reaction, but there is no such reaction for proteins. Therefore, the development of single-molecule protein sequencing is a critical step in the search for protein biomarkers. Here, we show that single amino acids can be identified by trapping the molecules between two electrodes that are coated with a layer of recognition molecules, then measuring the electron tunnelling current across the junction. A given molecule can bind in more than one way in the junction, and we therefore use a machine-learning algorithm to distinguish between the sets of electronic `fingerprints' associated with each binding motif. With this recognition tunnelling technique, we are able to identify D and L enantiomers, a methylated amino acid, isobaric isomers and short peptides. The results suggest that direct electronic sequencing of single proteins could be possible by sequentially measuring the products of processive exopeptidase digestion, or by using a molecular motor to pull proteins through a tunnel junction integrated with a nanopore.

  12. Near-Field Enhanced Photochemistry of Single Molecules in a Scanning Tunneling Microscope Junction.

    Science.gov (United States)

    Böckmann, Hannes; Gawinkowski, Sylwester; Waluk, Jacek; Raschke, Markus B; Wolf, Martin; Kumagai, Takashi

    2018-01-10

    Optical near-field excitation of metallic nanostructures can be used to enhance photochemical reactions. The enhancement under visible light illumination is of particular interest because it can facilitate the use of sunlight to promote photocatalytic chemical and energy conversion. However, few studies have yet addressed optical near-field induced chemistry, in particular at the single-molecule level. In this Letter, we report the near-field enhanced tautomerization of porphycene on a Cu(111) surface in a scanning tunneling microscope (STM) junction. The light-induced tautomerization is mediated by photogenerated carriers in the Cu substrate. It is revealed that the reaction cross section is significantly enhanced in the presence of a Au tip compared to the far-field induced process. The strong enhancement occurs in the red and near-infrared spectral range for Au tips, whereas a W tip shows a much weaker enhancement, suggesting that excitation of the localized plasmon resonance contributes to the process. Additionally, using the precise tip-surface distance control of the STM, the near-field enhanced tautomerization is examined in and out of the tunneling regime. Our results suggest that the enhancement is attributed to the increased carrier generation rate via decay of the excited near-field in the STM junction. Additionally, optically excited tunneling electrons also contribute to the process in the tunneling regime.

  13. Inelastic tunneling of electrons through a quantum dot with an embedded single molecular magnet

    Science.gov (United States)

    Chang, Bo; Liang, J.-Q.

    2010-06-01

    We report a theoretical analysis of electron transport through a quantum dot with an embedded biaxial single-molecule magnet (SMM) based on mapping of the many-body interaction-system onto a one-body problem by means of the non-equilibrium Green function technique. It is found that the conducting current exhibits a stepwise behavior and the nonlinear differential conductance displays additional peaks with variation of the sweeping speed and the magnitude of magnetic field. This observation can be interpreted by the interaction of electron-spin with the SMM and the quantum tunneling of magnetization. The inelastic conductance and the corresponding tunneling processes are investigated with normal as well as ferromagnetic electrodes. In the case of ferromagnetic configuration, the coupling to the SMM leads to an asymmetric tunneling magnetoresistance (TMR), which can be enhanced or suppressed greatly in certain regions. Moreover, a sudden TMR-switch with the variation of magnetic field is observed, which is seen to be caused by the inelastic tunneling.

  14. Inelastic tunneling of electrons through a quantum dot with an embedded single molecular magnet

    Energy Technology Data Exchange (ETDEWEB)

    Chang Bo [Institute of Theoretical Physics and Department of Physics, Shanxi University, Taiyuan, Shanxi 030006 (China); Liang, J.-Q., E-mail: jqliang@sxu.edu.c [Institute of Theoretical Physics and Department of Physics, Shanxi University, Taiyuan, Shanxi 030006 (China)

    2010-06-28

    We report a theoretical analysis of electron transport through a quantum dot with an embedded biaxial single-molecule magnet (SMM) based on mapping of the many-body interaction-system onto a one-body problem by means of the non-equilibrium Green function technique. It is found that the conducting current exhibits a stepwise behavior and the nonlinear differential conductance displays additional peaks with variation of the sweeping speed and the magnitude of magnetic field. This observation can be interpreted by the interaction of electron-spin with the SMM and the quantum tunneling of magnetization. The inelastic conductance and the corresponding tunneling processes are investigated with normal as well as ferromagnetic electrodes. In the case of ferromagnetic configuration, the coupling to the SMM leads to an asymmetric tunneling magnetoresistance (TMR), which can be enhanced or suppressed greatly in certain regions. Moreover, a sudden TMR-switch with the variation of magnetic field is observed, which is seen to be caused by the inelastic tunneling.

  15. Observation of layered antiferromagnetism in self-assembled parallel NiSi nanowire arrays on Si(110) by spin-polarized scanning tunneling spectromicroscopy

    Science.gov (United States)

    Hong, Ie-Hong; Hsu, Hsin-Zan

    2018-03-01

    The layered antiferromagnetism of parallel nanowire (NW) arrays self-assembled on Si(110) have been observed at room temperature by direct imaging of both the topographies and magnetic domains using spin-polarized scanning tunneling microscopy/spectroscopy (SP-STM/STS). The topographic STM images reveal that the self-assembled unidirectional and parallel NiSi NWs grow into the Si(110) substrate along the [\\bar{1}10] direction (i.e. the endotaxial growth) and exhibit multiple-layer growth. The spatially-resolved SP-STS maps show that these parallel NiSi NWs of different heights produce two opposite magnetic domains, depending on the heights of either even or odd layers in the layer stack of the NiSi NWs. This layer-wise antiferromagnetic structure can be attributed to an antiferromagnetic interlayer exchange coupling between the adjacent layers in the multiple-layer NiSi NW with a B2 (CsCl-type) crystal structure. Such an endotaxial heterostructure of parallel magnetic NiSi NW arrays with a layered antiferromagnetic ordering in Si(110) provides a new and important perspective for the development of novel Si-based spintronic nanodevices.

  16. Axial p-n junction and space charge limited current in single GaN nanowire

    Science.gov (United States)

    Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

    2018-01-01

    The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 1017 at cm-3 assuming a donor level N d of 2-3 × 1018 at cm-3. The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

  17. Axial p-n junction and space charge limited current in single GaN nanowire.

    Science.gov (United States)

    Fang, Zhihua; Donatini, Fabrice; Daudin, Bruno; Pernot, Julien

    2018-01-05

    The electrical characterizations of individual basic GaN nanostructures, such as axial nanowire (NW) p-n junctions, are becoming indispensable and crucial for the fully controlled realization of GaN NW based devices. In this study, electron beam induced current (EBIC) measurements were performed on two single axial GaN p-n junction NWs grown by plasma-assisted molecular beam epitaxy. I-V characteristics revealed that both ohmic and space charge limited current (SCLC) regimes occur in GaN p-n junction NW. Thanks to an improved contact process, both the electric field induced by the p-n junction and the SCLC in the p-part of GaN NW were disclosed and delineated by EBIC signals under different biases. Analyzing the EBIC profiles in the vicinity of the p-n junction under 0 V and reverse bias, we deduced a depletion width in the range of 116-125 nm. Following our previous work, the acceptor N a doping level was estimated to be 2-3 × 10 17 at cm -3 assuming a donor level N d of 2-3 × 10 18 at cm -3 . The hole diffusion length in n-GaN was determined to be 75 nm for NW #1 and 43 nm for NW #2, demonstrating a low surface recombination velocity at the m-plane facet of n-GaN NW. Under forward bias, EBIC imaging visualized the electric field induced by the SCLC close to p-side contact, in agreement with unusual SCLC previously reported in GaN NWs.

  18. Bright Single InAsP Quantum Dots at Telecom Wavelengths in Position-Controlled InP Nanowires: The Role of the Photonic Waveguide.

    Science.gov (United States)

    Haffouz, Sofiane; Zeuner, Katharina D; Dalacu, Dan; Poole, Philip J; Lapointe, Jean; Poitras, Daniel; Mnaymneh, Khaled; Wu, Xiaohua; Couillard, Martin; Korkusinski, Marek; Schöll, Eva; Jöns, Klaus D; Zwiller, Valery; Williams, Robin L

    2018-05-09

    We report on the site-selected growth of bright single InAsP quantum dots embedded within InP photonic nanowire waveguides emitting at telecom wavelengths. We demonstrate a dramatic dependence of the emission rate on both the emission wavelength and the nanowire diameter. With an appropriately designed waveguide, tailored to the emission wavelength of the dot, an increase in the count rate by nearly 2 orders of magnitude (0.4 to 35 kcps) is obtained for quantum dots emitting in the telecom O-band, showing high single-photon purity with multiphoton emission probabilities down to 2%. Using emission-wavelength-optimized waveguides, we demonstrate bright, narrow-line-width emission from single InAsP quantum dots with an unprecedented tuning range of 880 to 1550 nm. These results pave the way toward efficient single-photon sources at telecom wavelengths using deterministically grown InAsP/InP nanowire quantum dots.

  19. Detecting Single-Nucleotides by Tunneling Current Measurements at Sub-MHz Temporal Resolution.

    Science.gov (United States)

    Morikawa, Takanori; Yokota, Kazumichi; Tanimoto, Sachie; Tsutsui, Makusu; Taniguchi, Masateru

    2017-04-18

    Label-free detection of single-nucleotides was performed by fast tunneling current measurements in a polar solvent at 1 MHz sampling rate using SiO₂-protected Au nanoprobes. Short current spikes were observed, suggestive of trapping/detrapping of individual nucleotides between the nanoelectrodes. The fall and rise features of the electrical signatures indicated signal retardation by capacitance effects with a time constant of about 10 microseconds. The high temporal resolution revealed current fluctuations, reflecting the molecular conformation degrees of freedom in the electrode gap. The method presented in this work may enable direct characterizations of dynamic changes in single-molecule conformations in an electrode gap in liquid.

  20. Low-noise parametric amplification at 35 GHz in a single Josephson tunnel junction

    DEFF Research Database (Denmark)

    Mygind, Jesper; Pedersen, Niels Falsig; Sørensen, O. H.

    1979-01-01

    Parametric amplification at 35 GHz has been obtained using a single Josephson tunnel junction as the active element. The amplifier was operated in the singly quasidegenerate mode with a pump frequency at 70 GHz. The noise temperature was measured and found correlated with the gain. At the highest...... gain achieved, 11.6 dB, the noise temperature was 400 K. The noise temperature was reduced considerably by decreasing the gain. At 8 and 4 dB we found 165±25 K and 50±30 K, respectively. Applied Physics Letters is copyrighted by The American Institute of Physics....

  1. Revisiting the inelastic electron tunneling spectroscopy of single hydrogen atom adsorbed on the Cu(100) surface

    International Nuclear Information System (INIS)

    Jiang, Zhuoling; Wang, Hao; Sanvito, Stefano; Hou, Shimin

    2015-01-01

    Inelastic electron tunneling spectroscopy (IETS) of a single hydrogen atom on the Cu(100) surface in a scanning tunneling microscopy (STM) configuration has been investigated by employing the non-equilibrium Green’s function formalism combined with density functional theory. The electron-vibration interaction is treated at the level of lowest order expansion. Our calculations show that the single peak observed in the previous STM-IETS experiments is dominated by the perpendicular mode of the adsorbed H atom, while the parallel one only makes a negligible contribution even when the STM tip is laterally displaced from the top position of the H atom. This propensity of the IETS is deeply rooted in the symmetry of the vibrational modes and the characteristics of the conduction channel of the Cu-H-Cu tunneling junction, which is mainly composed of the 4s and 4p z atomic orbitals of the Cu apex atom and the 1s orbital of the adsorbed H atom. These findings are helpful for deepening our understanding of the propensity rules for IETS and promoting IETS as a more popular spectroscopic tool for molecular devices

  2. Manifestation of spin selection rules on the quantum tunneling of magnetization in a single-molecule magnet.

    Science.gov (United States)

    Henderson, J J; Koo, C; Feng, P L; del Barco, E; Hill, S; Tupitsyn, I S; Stamp, P C E; Hendrickson, D N

    2009-07-03

    We present low temperature magnetometry measurements on a new Mn3 single-molecule magnet in which the quantum tunneling of magnetization (QTM) displays clear evidence for quantum mechanical selection rules. A QTM resonance appearing only at high temperatures demonstrates tunneling between excited states with spin projections differing by a multiple of three. This is dictated by the C3 molecular symmetry, which forbids pure tunneling from the lowest metastable state. Transverse field resonances are understood by correctly orienting the Jahn-Teller axes of the individual manganese ions and including transverse dipolar fields. These factors are likely to be important for QTM in all single-molecule magnets.

  3. A variable-temperature scanning tunneling microscope capable of single-molecule vibrational spectroscopy

    International Nuclear Information System (INIS)

    Stipe, B.C.; Rezaei, M.A.; Ho, W.

    1999-01-01

    The design and performance of a variable-temperature scanning tunneling microscope (STM) is presented. The microscope operates from 8 to 350 K in ultrahigh vacuum. The thermally compensated STM is suspended by springs from the cold tip of a continuous flow cryostat and is completely surrounded by two radiation shields. The design allows for in situ dosing and irradiation of the sample as well as for the exchange of samples and STM tips. With the STM feedback loop off, the drift of the tip-sample spacing is approximately 0.001 Angstrom/min at 8 K. It is demonstrated that the STM is well-suited for the study of atomic-scale chemistry over a wide temperature range, for atomic-scale manipulation, and for single-molecule inelastic electron tunneling spectroscopy (IETS). copyright 1999 American Institute of Physics

  4. Effect of single Abrikosov vortices on the properties of Josephson tunnel junctions

    International Nuclear Information System (INIS)

    Golubov, A.A.; Kupriyanov, M.Yu.

    1987-01-01

    The effect of single Abrikosov vortices, trapped in the electrodes of a Josephson tunnel junction perpendicularly to the junction surface, on the tunnel current through the junction is studied within the framework of the microscopic theory. The current-voltage characteristic and the critical junction current I c are calculated for temperatures 0 c . It is shown that if the vortices at the junction are misaligned, singularities on the current-voltage characteristic appear at eV Δ (T), and in some cases the magnitude of suppression of I c may be of the order of magnitude of I c itself. The temperature dependence of the critical current is calculated for the case of one of the electrodes being a two-dimensional superconducting film in which the creation of opposite sign vortex pairs is significant

  5. Superconducting nanowire single photon detectors fabricated from an amorphous Mo0.75Ge0.25 thin film

    International Nuclear Information System (INIS)

    Verma, V. B.; Lita, A. E.; Vissers, M. R.; Marsili, F.; Pappas, D. P.; Mirin, R. P.; Nam, S. W.

    2014-01-01

    We present the characteristics of superconducting nanowire single photon detectors (SNSPDs) fabricated from amorphous Mo 0.75 Ge 0.25 thin-films. Fabricated devices show a saturation of the internal detection efficiency at temperatures below 1 K, with system dark count rates below 500 cps. Operation in a closed-cycle cryocooler at 2.5 K is possible with system detection efficiencies exceeding 20% for SNSPDs which have not been optimized for high detection efficiency. Jitter is observed to vary between 69 ps at 250 mK and 187 ps at 2.5 K using room temperature amplifiers.

  6. Inspection of single CdSe nanowires by use of micro-focused X-ray diffraction

    Energy Technology Data Exchange (ETDEWEB)

    Kurtulus, Oezguel [Dogus University, Istanbul (Turkey); Li, Zhen [University of Queensland, Brisbane (Australia); Arezki, Bahia; Biermanns, Andreas; Pietsch, Ullrich [University of Siegen (Germany)

    2010-07-01

    The morphology of CdSe nanowires (NW) can easily be controlled by various growth methods. In this study, CdSe NWs are prepared by solution-liquid-solid (SLS) approach providing needle-shaped wires of about 60nm in diameter and several microns in length. To make X-ray single NW inspection possible, the NWs were dispersed in toluene and hexadecylamine, homogenized by centrifugation and finally spin-coated on silicon substrate. SEM images revealed that the NWs are randomly oriented with length axis parallel to the substrate. However, at selected areas, the distance between neighboured NWs is in the order of one micron. These samples were investigated by X-ray diffraction using a 300 nm x 600 nm micro-focus at beamline ID1 of ESRF. Diffraction from 110W/2-20ZB basal plane was selected for single nanowire inspection. In order to measure various single objects subsequently, the sample was laterally scanned through the beam keeping the diffraction angle fixed. It was observed that the individual NWs differ slightly in peak position and peak width. From powder diffraction, it is known that NWs consist of an admixture of a wurtzite (W) and zinc-blende (ZB) structure units and the coherent illumination of sample by the micro-focus enables to visualize these zinc-blende and wurzite units separated by stacking faults.

  7. Electrically pumped photonic nanowire single-photon source with an efficienty of 89%

    DEFF Research Database (Denmark)

    Gregersen, Niels; Nielsen, Torben Roland; Mørk, Jesper

    2011-01-01

    control and has high tolerance towards surface roughness. In the nanowire, a geometrical effect ensures good coupling between the quantum dot and the optical mode, and an inverted tapering section is introduced to adiabatically expand the mode waist and control the far field emission profile while...

  8. Tunneling Mode of Scanning Electrochemical Microscopy: Probing Electrochemical Processes at Single Nanoparticles.

    Science.gov (United States)

    Sun, Tong; Wang, Dengchao; Mirkin, Michael V

    2018-06-18

    Electrochemical experiments at individual nanoparticles (NPs) can provide new insights into their structure-activity relationships. By using small nanoelectrodes as tips in a scanning electrochemical microscope (SECM), we recently imaged individual surface-bound 10-50 nm metal NPs. Herein, we introduce a new mode of SECM operation based on tunneling between the tip and a nanoparticle immobilized on the insulating surface. The obtained current vs. distance curves show the transition from the conventional feedback response to electron tunneling between the tip and the NP at separation distances of less than about 3 nm. In addition to high-resolution imaging of the NP topography, the tunneling mode enables measurement of the heterogeneous kinetics at a single NP without making an ohmic contact with it. The developed method should be useful for studying the effects of nanoparticle size and geometry on electrocatalytic activity in real-world applications. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Quantum dot single-photon switches of resonant tunneling current for discriminating-photon-number detection.

    Science.gov (United States)

    Weng, Qianchun; An, Zhenghua; Zhang, Bo; Chen, Pingping; Chen, Xiaoshuang; Zhu, Ziqiang; Lu, Wei

    2015-03-23

    Low-noise single-photon detectors that can resolve photon numbers are used to monitor the operation of quantum gates in linear-optical quantum computation. Exactly 0, 1 or 2 photons registered in a detector should be distinguished especially in long-distance quantum communication and quantum computation. Here we demonstrate a photon-number-resolving detector based on quantum dot coupled resonant tunneling diodes (QD-cRTD). Individual quantum-dots (QDs) coupled closely with adjacent quantum well (QW) of resonant tunneling diode operate as photon-gated switches- which turn on (off) the RTD tunneling current when they trap photon-generated holes (recombine with injected electrons). Proposed electron-injecting operation fills electrons into coupled QDs which turn "photon-switches" to "OFF" state and make the detector ready for multiple-photons detection. With proper decision regions defined, 1-photon and 2-photon states are resolved in 4.2 K with excellent propabilities of accuracy of 90% and 98% respectively. Further, by identifying step-like photon responses, the photon-number-resolving capability is sustained to 77 K, making the detector a promising candidate for advanced quantum information applications where photon-number-states should be accurately distinguished.

  10. Site-Specific Growth and in Situ Integration of Different Nanowire Material Networks on a Single Chip: Toward a Nanowire-Based Electronic Nose for Gas Detection.

    Science.gov (United States)

    Hrachowina, Lukas; Domènech-Gil, Guillem; Pardo, Antonio; Seifner, Michael S; Gràcia, Isabel; Cané, Carles; Romano-Rodríguez, Albert; Barth, Sven

    2018-03-23

    A new method for the site-selective synthesis of nanowires has been developed to enable material growth with defined morphology and, at the same time, different composition on the same chip surface. The chemical vapor deposition approach for the growth of these nanowire-based resistive devices using micromembranes can be easily modified and represents a simple, adjustable fabrication process for the direct integration of nanowire meshes in multifunctional devices. This proof-of-concept study includes the deposition of SnO 2 , WO 3 , and Ge nanowires on the same chip. The individual resistors exhibit adequate gas sensing responses toward changing gas concentrations of CO, NO 2 , and humidity diluted in synthetic air. The data have been processed by principal component analysis with cluster responses that can be easily separated, and thus, the devices described herein are in principle suitable for environmental monitoring.

  11. Note: A quartz cell with Pt single crystal bead electrode for electrochemical scanning tunneling microscope measurements.

    Science.gov (United States)

    Xia, Zhigang; Wang, Jihao; Hou, Yubin; Lu, Qingyou

    2014-09-01

    In this paper, we provide and demonstrate a design of a unique cell with Pt single crystal bead electrode for electrochemical scanning tunneling microscope (ECSTM) measurements. The active metal Pt electrode can be protected from air contamination during the preparation process. The transparency of the cell allows the tip and bead to be aligned by direct observation. Based on this, a new and effective alignment method is introduced. The high-quality bead preparations through this new cell have been confirmed by the ECSTM images of Pt (111).

  12. Bias voltage induced resistance switching effect in single-molecule magnets' tunneling junction.

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang

    2014-09-12

    An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be 'read out' by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

  13. Photon-assisted tunneling in a Fe8 single-molecule magnet

    Science.gov (United States)

    Sorace, L.; Wernsdorfer, W.; Thirion, C.; Barra, A.-L.; Pacchioni, M.; Mailly, D.; Barbara, B.

    2003-12-01

    The low-temperature spin dynamics of a Fe8 single-molecule magnet was studied under circularly polarized electromagnetic radiation allowing us to establish clearly photon-assisted tunneling. This effect, while linear at low power, becomes highly nonlinear above a relatively low-power threshold. Heating due to phonon emission, spin-spin interactions, and coherent emission/absorption of photons might lead to the observed nonlinearity. These results are of importance if such systems are to be used as quantum computers.

  14. Effects of microwave on spin tunneling in single-molecule magnets

    Science.gov (United States)

    Kim, Gwang-Hee; Kim, Tae-Suk

    2005-03-01

    We study theoretically the effects of the irradiated microwave on the magnetization in single-molecule magnets (SMMs) like V15 and Fe8. We find that the shape of magnetization depends on the microwave intensity as well as the microwave polarization. The applied microwave field enhances the tunneling probability. The linearly polarized microwaves induce the suppression of magnetization at both positive and negative magnetic fields. The circularly polarized microwaves are absorbed either at one direction of magnetic field or at both directions of magnetic fields, depending on the polarization directions with respect to the direction of longitudinal magnetic field. The generic features we found will be compared with the recent experimental results.

  15. Bias voltage induced resistance switching effect in single-molecule magnets’ tunneling junction

    Science.gov (United States)

    Zhang, Zhengzhong; Jiang, Liang

    2014-09-01

    An electric-pulse-induced reversible resistance change effect in a molecular magnetic tunneling junction, consisting of a single-molecule magnet (SMM) sandwiched in one nonmagnetic and one ferromagnetic electrode, is theoretically investigated. By applying a time-varying bias voltage, the SMM's spin orientation can be manipulated with large bias voltage pulses. Moreover, the different magnetic configuration at high-resistance/low-resistance states can be ‘read out’ by utilizing relative low bias voltage. This device scheme can be implemented with current technologies (Khajetoorians et al 2013 Science 339 55) and has potential application in molecular spintronics and high-density nonvolatile memory devices.

  16. Tunneling of coupled methyl quantum rotors in 4-methylpyridine: Single rotor potential versus coupling interaction

    Science.gov (United States)

    Khazaei, Somayeh; Sebastiani, Daniel

    2017-11-01

    We study the influence of rotational coupling between a pair of methyl rotators on the tunneling spectrum in condensed phase. Two interacting adjacent methyl groups are simulated within a coupled-pair model composed of static rotational potential created by the chemical environment and the interaction potential between two methyl groups. We solve the two-dimensional time-independent Schrödinger equation analytically by expanding the wave functions on the basis set of two independent free-rotor functions. We investigate three scenarios which differ with respect to the relative strength of single-rotor and coupling potential. For each scenario, we illustrate the dependence of the energy level scheme on the coupling strength. It is found that the main determinant of splitting energy levels tends to be a function of the ratio of strengths of coupling and single-rotor potential. The tunnel splitting caused by coupling is maximized for the coupled rotors in which their total hindering potential is relatively shallow. Such a weakly hindered methyl rotational potential is predicted for 4-methylpyridine at low temperature. The experimental observation of multiple tunneling peaks arising from a single type of methyl group in 4-methylpyridine in the inelastic neutron scattering spectrum is widely attributed to the rotor-rotor coupling. In this regard, using a set of first-principles calculations combined with the nudged elastic band method, we investigate the rotational potential energy surface (PES) of the coaxial pairs of rotors in 4-methylpyridine. A Numerov-type method is used to numerically solve the two-dimensional time-independent Schrödinger equation for the calculated 2D-density functional theory profile. Our computed energy levels reproduce the observed tunneling transitions well. Moreover, the calculated density distribution of the three methyl protons resembles the experimental nuclear densities obtained from the Fourier difference method. By mapping the

  17. Nonadiabatic Dynamics in Single-Electron Tunneling Devices with Time-Dependent Density-Functional Theory

    Science.gov (United States)

    Dittmann, Niklas; Splettstoesser, Janine; Helbig, Nicole

    2018-04-01

    We simulate the dynamics of a single-electron source, modeled as a quantum dot with on-site Coulomb interaction and tunnel coupling to an adjacent lead in time-dependent density-functional theory. Based on this system, we develop a time-nonlocal exchange-correlation potential by exploiting analogies with quantum-transport theory. The time nonlocality manifests itself in a dynamical potential step. We explicitly link the time evolution of the dynamical step to physical relaxation timescales of the electron dynamics. Finally, we discuss prospects for simulations of larger mesoscopic systems.

  18. Single-crystalline MgAl2O4 spinel nanotubes using a reactive and removable MgO nanowire template

    International Nuclear Information System (INIS)

    Fan Hongjin; Knez, Mato; Scholz, Roland; Nielsch, Kornelius; Pippel, Eckhard; Hesse, Dietrich; Goesele, Ulrich; Zacharias, Margit

    2006-01-01

    Using MgO nanowires as a reactive template, we fabricated for the first time single-crystal MgAl 2 O 4 spinel nanotubes through an interfacial solid-state reaction of MgO-Al 2 O 3 core-shell nanowires. Single-crystal MgO nanowires are coated with a conformal thin layer of amorphous Al 2 O 3 via atomic layer deposition. Subsequent annealing at 700 deg. C activates the interfacial reaction between MgO and Al 2 O 3 , transforming the alumina shell into a spinel shell. Finally, after etching away the remaining MgO core in ammonia sulfuric solution, MgAl 2 O 4 spinel nanotubes are obtained. As a transition from conventional planar spinel layers via thin-film interface reactions, our result might open a window for the fabrication of a wide variety of MgO-based spinel one-dimensional nanostructures

  19. Direct Observation of Double Hydrogen Transfer via Quantum Tunneling in a Single Porphycene Molecule on a Ag(110) Surface.

    Science.gov (United States)

    Koch, Matthias; Pagan, Mark; Persson, Mats; Gawinkowski, Sylwester; Waluk, Jacek; Kumagai, Takashi

    2017-09-13

    Quantum tunneling of hydrogen atoms (or protons) plays a crucial role in many chemical and biological reactions. Although tunneling of a single particle has been examined extensively in various one-dimensional potentials, many-particle tunneling in high-dimensional potential energy surfaces remains poorly understood. Here we present a direct observation of a double hydrogen atom transfer (tautomerization) within a single porphycene molecule on a Ag(110) surface using a cryogenic scanning tunneling microscope (STM). The tautomerization rates are temperature independent below ∼10 K, and a large kinetic isotope effect (KIE) is observed upon substituting the transferred hydrogen atoms by deuterium, indicating that the process is governed by tunneling. The observed KIE for three isotopologues and density functional theory calculations reveal that a stepwise transfer mechanism is dominant in the tautomerization. It is also found that the tautomerization rate is increased by vibrational excitation via an inelastic electron tunneling process. Moreover, the STM tip can be used to manipulate the tunneling dynamics through modification of the potential landscape.

  20. Single-molecule electronics: Cooling individual vibrational modes by the tunneling current.

    Science.gov (United States)

    Lykkebo, Jacob; Romano, Giuseppe; Gagliardi, Alessio; Pecchia, Alessandro; Solomon, Gemma C

    2016-03-21

    Electronic devices composed of single molecules constitute the ultimate limit in the continued downscaling of electronic components. A key challenge for single-molecule electronics is to control the temperature of these junctions. Controlling heating and cooling effects in individual vibrational modes can, in principle, be utilized to increase stability of single-molecule junctions under bias, to pump energy into particular vibrational modes to perform current-induced reactions, or to increase the resolution in inelastic electron tunneling spectroscopy by controlling the life-times of phonons in a molecule by suppressing absorption and external dissipation processes. Under bias the current and the molecule exchange energy, which typically results in heating of the molecule. However, the opposite process is also possible, where energy is extracted from the molecule by the tunneling current. Designing a molecular "heat sink" where a particular vibrational mode funnels heat out of the molecule and into the leads would be very desirable. It is even possible to imagine how the vibrational energy of the other vibrational modes could be funneled into the "cooling mode," given the right molecular design. Previous efforts to understand heating and cooling mechanisms in single molecule junctions have primarily been concerned with small models, where it is unclear which molecular systems they correspond to. In this paper, our focus is on suppressing heating and obtaining current-induced cooling in certain vibrational modes. Strategies for cooling vibrational modes in single-molecule junctions are presented, together with atomistic calculations based on those strategies. Cooling and reduced heating are observed for two different cooling schemes in calculations of atomistic single-molecule junctions.

  1. Realization of a four-step molecular switch in scanning tunneling microscope manipulation of single chlorophyll-a molecules

    Science.gov (United States)

    Iancu, Violeta; Hla, Saw-Wai

    2006-01-01

    Single chlorophyll-a molecules, a vital resource for the sustenance of life on Earth, have been investigated by using scanning tunneling microscope manipulation and spectroscopy on a gold substrate at 4.6 K. Chlorophyll-a binds on Au(111) via its porphyrin unit while the phytyl-chain is elevated from the surface by the support of four CH3 groups. By injecting tunneling electrons from the scanning tunneling microscope tip, we are able to bend the phytyl-chain, which enables the switching of four molecular conformations in a controlled manner. Statistical analyses and structural calculations reveal that all reversible switching mechanisms are initiated by a single tunneling-electron energy-transfer process, which induces bond rotation within the phytyl-chain. PMID:16954201

  2. Topological Insulator Nanowires and Nanoribbons

    KAUST Repository

    Kong, Desheng

    2010-01-13

    Recent theoretical calculations and photoemission spectroscopy measurements on the bulk Bi2Se3 material show that it is a three-dimensional topological insulator possessing conductive surface states with nondegenerate spins, attractive for dissipationless electronics and spintronics applications. Nanoscale topological insulator materials have a large surface-to-volume ratio that can manifest the conductive surface states and are promising candidates for devices. Here we report the synthesis and characterization of high quality single crystalline Bi2Se5 nanomaterials with a variety of morphologies. The synthesis of Bi 2Se5 nanowires and nanoribbons employs Au-catalyzed vapor-liquid-solid (VLS) mechanism. Nanowires, which exhibit rough surfaces, are formed by stacking nanoplatelets along the axial direction of the wires. Nanoribbons are grown along [1120] direction with a rectangular cross-section and have diverse morphologies, including quasi-one-dimensional, sheetlike, zigzag and sawtooth shapes. Scanning tunneling microscopy (STM) studies on nanoribbons show atomically smooth surfaces with ∼ 1 nm step edges, indicating single Se-Bi-Se-Bi-Se quintuple layers. STM measurements reveal a honeycomb atomic lattice, suggesting that the STM tip couples not only to the top Se atomic layer, but also to the Bi atomic layer underneath, which opens up the possibility to investigate the contribution of different atomic orbitais to the topological surface states. Transport measurements of a single nanoribbon device (four terminal resistance and Hall resistance) show great promise for nanoribbons as candidates to study topological surface states. © 2010 American Chemical Society.

  3. Single crystalline cylindrical nanowires – toward dense 3D arrays of magnetic vortices

    KAUST Repository

    Ivanov, Yurii P.

    2016-03-31

    Magnetic vortex-based media have recently been proposed for several applications of nanotechnology; however, because lithography is typically used for their preparation, their low-cost, large-scale fabrication is a challenge. One solution may be to use arrays of densely packed cobalt nanowires that have been efficiently fabricated by electrodeposition. In this work, we present this type of nanoscale magnetic structures that can hold multiple stable magnetic vortex domains at remanence with different chiralities. The stable vortex state is observed in arrays of monocrystalline cobalt nanowires with diameters as small as 45 nm and lengths longer than 200 nm with vanishing magnetic cross talk between closely packed neighboring wires in the array. Lorentz microscopy, electron holography and magnetic force microscopy, supported by micromagnetic simulations, show that the structure of the vortex state can be adjusted by varying the aspect ratio of the nanowires. The data we present here introduce a route toward the concept of 3-dimensional vortex-based magnetic memories.

  4. Single crystalline cylindrical nanowires – toward dense 3D arrays of magnetic vortices

    KAUST Repository

    Ivanov, Yurii P.; Chuvilin, Andrey; Vivas, Laura G.; Kosel, Jü rgen; Chubykalo-Fesenko, Oksana; Vá zquez, Manuel

    2016-01-01

    Magnetic vortex-based media have recently been proposed for several applications of nanotechnology; however, because lithography is typically used for their preparation, their low-cost, large-scale fabrication is a challenge. One solution may be to use arrays of densely packed cobalt nanowires that have been efficiently fabricated by electrodeposition. In this work, we present this type of nanoscale magnetic structures that can hold multiple stable magnetic vortex domains at remanence with different chiralities. The stable vortex state is observed in arrays of monocrystalline cobalt nanowires with diameters as small as 45 nm and lengths longer than 200 nm with vanishing magnetic cross talk between closely packed neighboring wires in the array. Lorentz microscopy, electron holography and magnetic force microscopy, supported by micromagnetic simulations, show that the structure of the vortex state can be adjusted by varying the aspect ratio of the nanowires. The data we present here introduce a route toward the concept of 3-dimensional vortex-based magnetic memories.

  5. Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 K

    Science.gov (United States)

    Chiu, Shao-Pin; Chung, Hui-Fang; Lin, Yong-Han; Kai, Ji-Jung; Chen, Fu-Rong; Lin, Juhn-Jong

    2009-03-01

    Single-crystalline indium tin oxide (ITO) nanowires (NWs) were grown by the standard thermal evaporation method. The as-grown NWs were typically 100-300 nm in diameter and a few µm long. Four-probe submicron Ti/Au electrodes on individual NWs were fabricated by the electron-beam lithography technique. The resistivities of several single NWs have been measured from 300 down to 1.5 K. The results indicate that the as-grown ITO NWs are metallic, but disordered. The overall temperature behavior of resistivity can be described by the Bloch-Grüneisen law plus a low-temperature correction due to the scattering of electrons off dynamic point defects. This observation suggests the existence of numerous dynamic point defects in as-grown ITO NWs.

  6. Four-probe electrical-transport measurements on single indium tin oxide nanowires between 1.5 and 300 K

    International Nuclear Information System (INIS)

    Chiu, S-P; Lin, J-J; Chung, H-F; Kai, J-J; Chen, F-R; Lin, Y-H

    2009-01-01

    Single-crystalline indium tin oxide (ITO) nanowires (NWs) were grown by the standard thermal evaporation method. The as-grown NWs were typically 100-300 nm in diameter and a few μm long. Four-probe submicron Ti/Au electrodes on individual NWs were fabricated by the electron-beam lithography technique. The resistivities of several single NWs have been measured from 300 down to 1.5 K. The results indicate that the as-grown ITO NWs are metallic, but disordered. The overall temperature behavior of resistivity can be described by the Bloch-Grueneisen law plus a low-temperature correction due to the scattering of electrons off dynamic point defects. This observation suggests the existence of numerous dynamic point defects in as-grown ITO NWs.

  7. Probing Single Nanometer-scale Particles with Scanning Tunneling Microscopy and Spectroscopies

    International Nuclear Information System (INIS)

    McCarty, G.S.; Love, J.C.; Kushmerick, J.G.; Charles, L.F.; Keating, C.D.; Toleno, B.J.; Lyn, M.E.; Castleman, A.W.; Natan, M.J.; Weiss, P.S.

    1999-01-01

    Scanning tunneling microscopy can be used to isolate single particles on surfaces for further study. Local optical and electronic properties coupled with topographic information collected by the scanning tunneling microscope (STM) give insight into the intrinsic properties of the species under study. Since each spectroscopic measurement is done on a single particle, each sample is 'monodisperse', regardless of the degree of heterogeneity of the original preparation. We illustrate this with three example systems - a metal cluster of known atomic structure, metal nanoparticles dispersed from colloid suspensions, and metallocarbohedrenes (Met-Cars) deposited with other reaction products. Au and Ag nanoparticles were imaged using a photon emission STM. The threshold voltage, the lowest bias voltage at which photons are produced, was determined for Au nanoparticles. Electronic spectra of small clusters of Ni atoms on MoS 2 were recorded. Preliminary images of Zr-based Met-Car-containing soot were obtained on Au and MoS 2 substrates and partial electronic spectra were recorded of these possible Met-Car particles

  8. Implementing and Quantifying the Shape-Memory Effect of Single Polymeric Micro/Nanowires with an Atomic Force Microscope.

    Science.gov (United States)

    Fang, Liang; Gould, Oliver E C; Lysyakova, Liudmila; Jiang, Yi; Sauter, Tilman; Frank, Oliver; Becker, Tino; Schossig, Michael; Kratz, Karl; Lendlein, Andreas

    2018-04-23

    The implementation of shape-memory effects (SME) in polymeric micro- or nano-objects currently relies on the application of indirect macroscopic manipulation techniques, for example, stretchable molds or phantoms, to ensembles of small objects. Here, we introduce a method capable of the controlled manipulation and SME quantification of individual micro- and nano-objects in analogy to macroscopic thermomechanical test procedures. An atomic force microscope was utilized to address individual electro-spun poly(ether urethane) (PEU) micro- or nanowires freely suspended between two micropillars on a micro-structured silicon substrate. In this way, programming strains of 10±1% or 21±1% were realized, which could be successfully fixed. An almost complete restoration of the original free-suspended shape during heating confirmed the excellent shape-memory performance of the PEU wires. Apparent recovery stresses of σ max,app =1.2±0.1 and 33.3±0.1 MPa were obtained for a single microwire and nanowire, respectively. The universal AFM test platform described here enables the implementation and quantification of a thermomechanically induced function for individual polymeric micro- and nanosystems. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  9. Atomistic simulations on the axial nanowelding configuration and contact behavior between Ag nanowire and single-walled carbon nanotubes

    International Nuclear Information System (INIS)

    Cui, Jianlei; Zhang, Jianwei; He, Xiaoqiao; Yang, Xinjun; Mei, Xuesong; Wang, Wenjun; Jiang, Gedong; Wang, Kedian; Yang, Lijun; Xie, Hui

    2017-01-01

    As for the interesting new building blocks, the Ag nanowires (AgNWs) and single-walled carbon nanotubes (SWNTs) as the interesting new building blocks are viewed as the promising candidates for the next-generation interconnects due to their most remarkable electrical, thermal, optical, mechanical, and other properties. The axial nanowelding of head-to-head style and side-to-side style is relatively simulated with the molecular dynamics method. As for the head-to-head structural style, SWNTs will move toward the AgNWs and contact with the head of AgNWs. And, the part of the Ag nanowire may be subsequently encapsulated in SWNT with the core-filling Ag atom chain as the final atomic contact configuration during nanowelding, which is related to the nanowelding temperature. When the SWNTs and AgNWs are arranged by the side-to-side contact style, the SWNTs will move along the SWNT surface and may eventually catch up with the AgNW being neck and neck. Aiming at the final axial atomic configurations and the contact behavior during nanowelding process, the related dominant mechanism is revealed in this paper.

  10. Atomistic simulations on the axial nanowelding configuration and contact behavior between Ag nanowire and single-walled carbon nanotubes

    Energy Technology Data Exchange (ETDEWEB)

    Cui, Jianlei, E-mail: cjlxjtu@mail.xjtu.edu.cn; Zhang, Jianwei [Xi’an Jiaotong University, State Key Laboratory for Manufacturing Systems Engineering (China); He, Xiaoqiao, E-mail: bcxqhe@cityu.edu.hk [City University of Hong Kong, Department of Architecture and Civil Engineering (Hong Kong); Yang, Xinjun [Fudan University, State Key Laboratory of Surface Physics and Department of Physics (China); Mei, Xuesong; Wang, Wenjun; Jiang, Gedong; Wang, Kedian [Xi’an Jiaotong University, State Key Laboratory for Manufacturing Systems Engineering (China); Yang, Lijun; Xie, Hui [Harbin Institute of Technology, State Key Laboratory of Robotics and Systems (China)

    2017-03-15

    As for the interesting new building blocks, the Ag nanowires (AgNWs) and single-walled carbon nanotubes (SWNTs) as the interesting new building blocks are viewed as the promising candidates for the next-generation interconnects due to their most remarkable electrical, thermal, optical, mechanical, and other properties. The axial nanowelding of head-to-head style and side-to-side style is relatively simulated with the molecular dynamics method. As for the head-to-head structural style, SWNTs will move toward the AgNWs and contact with the head of AgNWs. And, the part of the Ag nanowire may be subsequently encapsulated in SWNT with the core-filling Ag atom chain as the final atomic contact configuration during nanowelding, which is related to the nanowelding temperature. When the SWNTs and AgNWs are arranged by the side-to-side contact style, the SWNTs will move along the SWNT surface and may eventually catch up with the AgNW being neck and neck. Aiming at the final axial atomic configurations and the contact behavior during nanowelding process, the related dominant mechanism is revealed in this paper.

  11. Core-state manipulation of single Fe impurities in GaAs with a scanning tunneling microscope

    NARCIS (Netherlands)

    Bocquel, J.; Kortan, V.R.; Sahin, C.; Campion, R.P.; Gallagher, B.L.; Flatte, M.E.; Koenraad, P.M.

    2013-01-01

    We demonstrate that a scanning tunneling microscope tip can be used to manipulate the tightly bound core (d-electron) state of single Fe ions embedded in GaAs. Increasing tip-sample voltage removes one d electron from the core of a single Fe, changing the dopant from the (Fe2+)(-) ionized acceptor

  12. Probing the local environment of a single OPE3 molecule using inelastic tunneling electron spectroscopy.

    Science.gov (United States)

    Frisenda, Riccardo; Perrin, Mickael L; van der Zant, Herre S J

    2015-01-01

    We study single-molecule oligo(phenylene ethynylene)dithiol junctions by means of inelastic electron tunneling spectroscopy (IETS). The molecule is contacted with gold nano-electrodes formed with the mechanically controllable break junction technique. We record the IETS spectrum of the molecule from direct current measurements, both as a function of time and electrode separation. We find that for fixed electrode separation the molecule switches between various configurations, which are characterized by different IETS spectra. Similar variations in the IETS signal are observed during atomic rearrangements upon stretching of the molecular junction. Using quantum chemistry calculations, we identity some of the vibrational modes which constitute a chemical fingerprint of the molecule. In addition, changes can be attributed to rearrangements of the local molecular environment, in particular at the molecule-electrode interface. This study shows the importance of taking into account the interaction with the electrodes when describing inelastic contributions to transport through single-molecule junctions.

  13. Magnetization tunneling in high-symmetry single-molecule magnets: Limitations of the giant spin approximation

    Science.gov (United States)

    Wilson, A.; Lawrence, J.; Yang, E.-C.; Nakano, M.; Hendrickson, D. N.; Hill, S.

    2006-10-01

    Electron paramagnetic resonance (EPR) studies of a Ni4 single-molecule magnet (SMM) yield the zero-field-splitting (ZFS) parameters D , B40 , and B44 , based on the giant spin approximation (GSA) with S=4 ; B44 is responsible for the magnetization tunneling in this SMM. Experiments on an isostructural Ni-doped Zn4 crystal establish the NiII ion ZFS parameters. The fourth-order ZFS parameters in the GSA arise from the interplay between the Heisenberg interaction Jŝ1•ŝ2 and the second-order single-ion anisotropy, giving rise to mixing of higher-lying S≠4 states into the S=4 state. Consequently, J directly influences the ZFS in the ground state, enabling its determination by EPR.

  14. The control of the growth orientations of electrodeposited single-crystal nanowire arrays: a case study for hexagonal CdS

    Energy Technology Data Exchange (ETDEWEB)

    Sun Hongyu; Li Xiaohong; Chen Yan; Li Wei; Zhang Xiangyi [State Key Laboratory of Metastable Materials Science and Technology, Yanshan University, 066004 Qinhuangdao (China); Li Feng; Liu Baoting [College of Physics Science and Technology, Hebei University, 071002 Baoding (China)], E-mail: xyzh66@ysu.edu.cn

    2008-06-04

    The controllable growth of highly aligned and ordered semiconductor nanowire arrays is crucial for their potential applications in nanodevices. In the present study, both the growth orientation and the microstructure of hexagonal CdS nanowire arrays electrodeposited in a porous alumina template with 40 nm diameter pores have been controlled by simply tuning the deposition current density. An extremely low current density of 0.05 mA cm{sup -2} is favorable for the growth of single-crystal CdS nanowires along the normal direction of the intrinsic low-surface-energy (103) face. This can be understood well by a modified critical dimension model given in the present work.

  15. The control of the growth orientations of electrodeposited single-crystal nanowire arrays: a case study for hexagonal CdS

    International Nuclear Information System (INIS)

    Sun Hongyu; Li Xiaohong; Chen Yan; Li Wei; Zhang Xiangyi; Li Feng; Liu Baoting

    2008-01-01

    The controllable growth of highly aligned and ordered semiconductor nanowire arrays is crucial for their potential applications in nanodevices. In the present study, both the growth orientation and the microstructure of hexagonal CdS nanowire arrays electrodeposited in a porous alumina template with 40 nm diameter pores have been controlled by simply tuning the deposition current density. An extremely low current density of 0.05 mA cm -2 is favorable for the growth of single-crystal CdS nanowires along the normal direction of the intrinsic low-surface-energy (103) face. This can be understood well by a modified critical dimension model given in the present work

  16. Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur

    2011-10-01

    Spin-polarization asymmetry is the key parameter in asymmetric voltage behavior (AVB) of the tunnel magnetoresistance (TMR) in magnetic tunnel junctions. In this paper, we study the value of the TMR as a function of the applied voltage Va in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions. As a result, we found that AVB may help to determine the exact values of Fermi wave vectors for minority and majority conducting spin sub-bands. Moreover, significant asymmetry of the experimental TMR-Va curves, which arises due to different annealing regimes, is explained by different heights of the tunnel barriers and values of the spin asymmetry. The numerical TMR-V a data are in good agreement with experimental ones. © 2011 IEEE.

  17. Single-InN-Nanowire Nanogenerator with Upto 1 V Output Voltage

    KAUST Repository

    Huang, Chi-Te

    2010-07-30

    Piezoelectric potential of a InN nanowire (NW) growing along [011̄0] can be positive, negative, and zero depending on the direction of the applied transverse force. By measuring the output voltage of a InN-NW-based nanogenerator, about 40% to 55% of output voltages are within the range of ?1 and ?20 mV, and 25% to 30% of output voltages would exceed ?100 mV. Some output voltages could reach the magnitude of ?1000 mV, showing its great potential for fabricating high-output nanogenerators. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  18. Direct synthesis of pure single-crystalline Magnéli phase Ti8O15 nanowires as conductive carbon-free materials for electrocatalysis

    Science.gov (United States)

    He, Chunyong; Chang, Shiyong; Huang, Xiangdong; Wang, Qingquan; Mei, Ao; Shen, Pei Kang

    2015-02-01

    The Magnéli phase Ti8O15 nanowires (NWs) have been grown directly on a Ti substrate by a facile one-step evaporation-deposition synthesis method under a hydrogen atmosphere. The Ti8O15 NWs exhibit an outstanding electrical conductivity at room temperature. The electrical conductivity of a single Ti8O15 nanowire is 20.6 S cm-1 at 300 K. Theoretical calculations manifest that the existence of a large number of oxygen vacancies changes the band structure, resulting in the reduction of the electronic resistance. The Magnéli phase Ti8O15 nanowires have been used as conductive carbon-free supports to load Pt nanoparticles for direct methanol oxidation reaction (MOR). The Pt/Ti8O15 NWs show an enhanced activity and extremely high durability compared with commercial Pt/C catalysts.The Magnéli phase Ti8O15 nanowires (NWs) have been grown directly on a Ti substrate by a facile one-step evaporation-deposition synthesis method under a hydrogen atmosphere. The Ti8O15 NWs exhibit an outstanding electrical conductivity at room temperature. The electrical conductivity of a single Ti8O15 nanowire is 20.6 S cm-1 at 300 K. Theoretical calculations manifest that the existence of a large number of oxygen vacancies changes the band structure, resulting in the reduction of the electronic resistance. The Magnéli phase Ti8O15 nanowires have been used as conductive carbon-free supports to load Pt nanoparticles for direct methanol oxidation reaction (MOR). The Pt/Ti8O15 NWs show an enhanced activity and extremely high durability compared with commercial Pt/C catalysts. Electronic supplementary information (ESI) available: Additional data for the characterization and experimental details see DOI: 10.1039/c4nr05806b

  19. Direct exchange between silicon nanocrystals and tunnel oxide traps under illumination on single electron photodetector

    Energy Technology Data Exchange (ETDEWEB)

    Chatbouri, S., E-mail: Samir.chatbouri@yahoo.com; Troudi, M.; Sghaier, N.; Kalboussi, A. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Aimez, V. [Université de Sherbrooke, Laboratoire Nanotechnologies et Nanosystémes (UMI-LN2 3463), Université de Sherbrooke—CNRS—INSA de Lyon-ECL-UJF-CPE Lyon, Institut Interdisciplinaire d’Innovation Technologique (Canada); Drouin, D. [Avenue de I’environnement, Université de Monastir, Laboratoire de Micro électronique et Instrumentation (LR13ES12), Faculté des Sciences de Monastir (Tunisia); Souifi, A. [Institut des Nanotechnologies de Lyon—site INSA de Lyon, UMR CNRS 5270 (France)

    2016-09-15

    In this paper we present the trapping of photogenerated charge carriers for 300 s resulted by their direct exchange under illumination between a few silicon nanocrystals (ncs-Si) embedded in an oxide tunnel layer (SiO{sub x} = 1.5) and the tunnel oxide traps levels for a single electron photodetector (photo-SET or nanopixel). At first place, the presence of a photocurrent limited in the inversion zone under illumination in the I–V curves confirms the creation of a pair electron/hole (e–h) at high energy. This photogenerated charge carriers can be trapped in the oxide. Using the capacitance-voltage under illumination (the photo-CV measurements) we show a hysteresis chargement limited in the inversion area, indicating that the photo-generated charge carriers are stored at traps levels at the interface and within ncs-Si. The direct exchange of the photogenerated charge carriers between the interface traps levels and the ncs-Si contributed on the photomemory effect for 300 s for our nanopixel at room temperature.

  20. Dipolar-Biased Tunneling of Magnetization in Crystals of Single Molecule Magnets

    Science.gov (United States)

    Awaga, Kunio

    2007-03-01

    The molecular cluster Mn12 has attracted much interest as a single-molecule magnet (SMM) and as a multi-redox system. It has a high-spin ground state of S=10 and a strong uniaxial magnetic anisotropy, and the combination of the two natures makes an effective potential barrier between the up and down spin states. At low temperatures, the magnetization curve exhibited a hysteresis loop and the quantum tunneling of magnetization (QTM). In the present work, we studied the structure and magnetic properties of the mixed-metal SMM, Mn11Cr, through the analysis of Mn11Cr/Mn12 mixed crystal. High-frequency EPR spectra were well explained by assuming that Mn11Cr was in a ground spin-state of S=19/2 with nearly the same EPR parameter set as for Mn12. QTM in Mn11Cr was observed with the same field interval as for Mn12. The magnetization of Mn11Cr and Mn12 in the mixed crystal can be independently manipulated by utilizing the difference between their coercive fields. The resonance fields of QTM in Mn11Cr are significantly affected by the magnetization direction of Mn12, suggesting the effect of dipolar-biased tunneling. Besides SMM, we would also like to report the unusual magnetic properties of spherical hollow nanomagnets, the electrical properties of heterocyclic thiazyl radicals, and their possible applications in spintronics and organic electronics.

  1. Controlling charges distribution at the surface of a single GaN nanowire by in-situ strain

    Directory of Open Access Journals (Sweden)

    Xiao Chen

    2017-08-01

    Full Text Available Effect of the strain on the charge distribution at the surface of a GaN semiconductor nanowire (NW has been investigated inside transmission electron microscope (TEM by in-situ off-axis electron holography. The outer and inner surfaces of the NW bent axially under compression of two Au electrodes were differently strained, resulting in difference of their Fermi levels. Consequently, the free electrons flow from the high Fermi level to the low level until the two Fermi levels aligned in a line. The potential distributions induced by charge redistribution in the two vacuum sides of the bent NW were examined respectively, and the opposite nature of the bounded charges on the outer and inner surfaces of the bent NW was identified. The results provide experimental evidence that the charge distribution at the surfaces of a single GaN NW can be controlled by different strains created along the NW.

  2. Spin Quantum Tunneling via Entangled States in a Dimer of Exchange-Coupled Single-Molecule Magnets

    Science.gov (United States)

    Tiron, R.; Wernsdorfer, W.; Foguet-Albiol, D.; Aliaga-Alcalde, N.; Christou, G.

    2003-11-01

    A new family of supramolecular, antiferromagnetically exchange-coupled dimers of single-molecule magnets (SMMs) has recently been reported. Each SMM acts as a bias on its neighbor, shifting the quantum tunneling resonances of the individual SMMs. Hysteresis loop measurements on a single crystal of SMM dimers have now established quantum tunneling of the magnetization via entangled states of the dimer. This shows that the dimer really does behave as a quantum mechanically coupled dimer, and also allows the measurement of the longitudinal and transverse superexchange coupling constants.

  3. Charge Separation at Mixed-Dimensional Single and Multilayer MoS2/Silicon Nanowire Heterojunctions.

    Science.gov (United States)

    Henning, Alex; Sangwan, Vinod K; Bergeron, Hadallia; Balla, Itamar; Sun, Zhiyuan; Hersam, Mark C; Lauhon, Lincoln J

    2018-05-16

    Layered two-dimensional (2-D) semiconductors can be combined with other low-dimensional semiconductors to form nonplanar mixed-dimensional van der Waals (vdW) heterojunctions whose charge transport behavior is influenced by the heterojunction geometry, providing a new degree of freedom to engineer device functions. Toward that end, we investigated the photoresponse of Si nanowire/MoS 2 heterojunction diodes with scanning photocurrent microscopy and time-resolved photocurrent measurements. Comparison of n-Si/MoS 2 isotype heterojunctions with p-Si/MoS 2 heterojunction diodes under varying biases shows that the depletion region in the p-n heterojunction promotes exciton dissociation and carrier collection. We measure an instrument-limited response time of 1 μs, which is 10 times faster than the previously reported response times for planar Si/MoS 2 devices, highlighting the advantages of the 1-D/2-D heterojunction. Finite element simulations of device models provide a detailed understanding of how the electrostatics affect charge transport in nanowire/vdW heterojunctions and inform the design of future vdW heterojunction photodetectors and transistors.

  4. Shell-Tunneling Spectroscopy of the Single-Particle Energy Levels of Insulating Quantum Dots

    NARCIS (Netherlands)

    Bakkers, E.P.A.M.; Hens, Z.; Zunger, A.; Franceschetti, A; Kouwenhoven, L.P.; Gurevich, L.; Vanmaekelbergh, D.

    2001-01-01

    The energy levels of CdSe quantum dots are studied by scanning tunneling spectroscopy. By varying the tip-dot distance, we switch from "shell-filling" spectroscopy (where electrons accumulate in the dot and experience mutual repulsion) to "shell-tunneling" spectroscopy (where electrons tunnel, one

  5. Intrinsic spin-relaxation induced negative tunnel magnetoresistance in a single-molecule magnet

    Science.gov (United States)

    Xie, Haiqing; Wang, Qiang; Xue, Hai-Bin; Jiao, HuJun; Liang, J.-Q.

    2013-06-01

    We investigate theoretically the effects of intrinsic spin-relaxation on the spin-dependent transport through a single-molecule magnet (SMM), which is weakly coupled to ferromagnetic leads. The tunnel magnetoresistance (TMR) is obtained by means of the rate-equation approach including not only the sequential but also the cotunneling processes. It is shown that the TMR is strongly suppressed by the fast spin-relaxation in the sequential region and can vary from a large positive to slight negative value in the cotunneling region. Moreover, with an external magnetic field along the easy-axis of SMM, a large negative TMR is found when the relaxation strength increases. Finally, in the high bias voltage limit the TMR for the negative bias is slightly larger than its characteristic value of the sequential region; however, it can become negative for the positive bias caused by the fast spin-relaxation.

  6. Single-molecule electron tunnelling through multiple redox levels with environmental relaxation

    DEFF Research Database (Denmark)

    Kuznetsov, A.M.; Ulstrup, Jens

    2004-01-01

    represent the substrate and tip in electrochemical in situ scanning tunnelling microscopy. An equivalent three-electrode configuration represents a molecular single-electron transistor in which the enclosing electrodes constitute source and drain, and the reference electrode the gate. Current-bias voltage...... relations at fixed electrochemical overpotential or gate voltage, and current-overpotential or current-gate voltage relations at fixed bias voltage are equivalent in the two systems. Due to the activation-less nature of the processes, electron flow between the electrodes through the molecular redox levels...... level(s) subsequent to electron transfer. Several physical mechanisms can be distinguished and distinctive current-overpotential/gate voltage or current-bias voltage relations obtained. These reflect electronic level separation, environmental nuclear reorganisation, and coherent or incoherent multi...

  7. Fast magnetization tunneling in tetranickel(II) single-molecule magnets.

    Science.gov (United States)

    Yang, En-Che; Wernsdorfer, Wolfgang; Zakharov, Lev N; Karaki, Yoshitomo; Yamaguchi, Akira; Isidro, Rose M; Lu, Guo-Di; Wilson, Samuel A; Rheingold, Arnold L; Ishimoto, Hidehiko; Hendrickson, David N

    2006-01-23

    A series of Ni(4) cubane complexes with the composition [Ni(hmp)(ROH)Cl](4) complexes 1-4 where R= -CH(3) (complex 1), -CH(2)CH(3) (complex 2), -CH(2)CH(2)(C(4)H(9)) (complex 3), -CH(2)CH(2)CH(2)(C(6)H(11)) (complex 4), hmp(-) is the anion of 2-hydroxymethylpyridine, t-Buhmp(-) is the anion of 4-tert-butyl-2-hydroxymethylpyridine, and dmb is 3,3-dimethyl-1-butanol] and [Ni(hmp)(dmb)Br](4) (complex 5) and [Ni(t-Buhmp)(dmb)Cl](4) (complex 6) were prepared. All six complexes were characterized by dc magnetic susceptibility data to be ferromagnetically coupled to give an S = 4 ground state with significant magnetoanisotropy (D approximately equal to -0.6 cm(-1)). Magnetization hysteresis measurements carried out on single crystals of complexes 1-6 establish the single-molecule magnet (SMM) behavior of these complexes. The exchange bias observed in the magnetization hysteresis loops of complexes 1 and 2 is dramatically decreased to zero in complex 3, where the bulky dmb ligand is employed. Fast tunneling of magnetization is observed for the high-symmetry (S(4) site symmetry) Ni(4) complexes in the crystal of complex 3, and the tunneling rate can even be enhanced by destroying the S(4) site symmetry, as is the case for complex 4, where there are two crystallographically different Ni(4) molecules, one with C(2) and the other with C(1) site symmetry. Magnetic ordering temperatures due to intermolecular dipolar and magnetic exchange interactions were determined by means of very low-temperature ac susceptibility measurements; complex 1 orders at 1100 mK, complex 3 at 290 mK, complex 4 at approximately 80 mK, and complex 6 at lower temperatures for those complexes with the bulkiest ligands.

  8. Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires

    International Nuclear Information System (INIS)

    Schaefer-Nolte, E O; Stoica, T; Gotschke, T; Limbach, F A; Gruetzmacher, D; Calarco, R; Sutter, E; Sutter, P

    2010-01-01

    In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E 2 phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

  9. Enhanced Light Scattering of the Forbidden longitudinal Optical Phonon Mode Studied by Micro-Raman Spectroscopy on Single InN nanowires

    International Nuclear Information System (INIS)

    Sutter, E.; Schafer-Nolte, E.O.; Stoica, T.; Gotschke, T.; Limbach, F.A.; Sutter, P.; Grutzmacher, D.; Calarco, R.

    2010-01-01

    In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E2 phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

  10. Enhanced light scattering of the forbidden longitudinal optical phonon mode studied by micro-Raman spectroscopy on single InN nanowires.

    Science.gov (United States)

    Schäfer-Nolte, E O; Stoica, T; Gotschke, T; Limbach, F A; Sutter, E; Sutter, P; Grützmacher, D; Calarco, R

    2010-08-06

    In the literature, there are controversies on the interpretation of the appearance in InN Raman spectra of a strong scattering peak in the energy region of the unscreened longitudinal optical (LO) phonons, although a shift caused by the phonon-plasmon interaction is expected for the high conductance observed in this material. Most measurements on light scattering are performed on ensembles of InN nanowires (NWs). However, it is important to investigate the behavior of individual nanowires and here we report on micro-Raman measurements on single nanowires. When changing the polarization direction of the incident light from parallel to perpendicular to the wire, the expected reduction of the Raman scattering was observed for transversal optical (TO) and E(2) phonon scattering modes, while a strong symmetry-forbidden LO mode was observed independently on the laser polarization direction. Single Mg- and Si-doped crystalline InN nanowires were also investigated. Magnesium doping results in a sharpening of the Raman peaks, while silicon doping leads to an asymmetric broadening of the LO peak. The results can be explained based on the influence of the high electron concentration with a strong contribution of the surface accumulation layer and the associated internal electric field.

  11. Synthesis, structure and photoelectrochemical properties of single crystalline silicon nanowire arrays

    International Nuclear Information System (INIS)

    Dalchiele, E.A.; Martin, F.; Leinen, D.; Marotti, R.E.; Ramos-Barrado, J.R.

    2010-01-01

    In the present work, n-type silicon nanowire (n-SiNW) arrays have been synthesized by self-assembly electroless metal deposition (EMD) nanoelectrochemistry. The synthesized n-SiNW arrays have been submitted to scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), X-ray photoelectron spectroscopy (XPS), and optical studies. Initial probes of the solar device conversion properties and the photovoltaic parameters such as short-circuit current, open-circuit potential, and fill factor of the n-SiNW arrays have been explored using a liquid-junction in a photoelectrochemical (PEC) system under white light. Moreover, a direct comparison between the PEC performance of a polished n-Si(100) and the synthesized n-SiNW array photoelectrodes has been done. The PEC performance was significantly enhanced on the n-SiNWs photoelectrodes compared with that on polished n-Si(100).

  12. Spin asymmetry calculations of the TMR-V curves in single and double-barrier magnetic tunnel junctions

    KAUST Repository

    Useinov, Arthur; Kosel, Jü rgen

    2011-01-01

    in the single as well as double barrier magnetic tunnel junctions (SMTJ & DMTJ, which are constructed from CoFeB/MgO interfaces) and numerically estimate the possible difference of the TMR-V a curves for negative and positive voltages in the homojunctions

  13. Development of CdTe/Cd1-xMgxTe double barrier, single quantum well heterostructure for resonant tunneling

    International Nuclear Information System (INIS)

    Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G.

    1995-01-01

    We report the first observation of resonant tunneling through a CdTe/Cd 1-x Mg x Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K. (author)

  14. Large-area aligned growth of single-crystalline organic nanowire arrays for high-performance photodetectors

    International Nuclear Information System (INIS)

    Wu Yiming; Zhang Xiujuan; Pan Huanhuan; Zhang Xiwei; Zhang Yuping; Zhang Xiaozhen; Jie Jiansheng

    2013-01-01

    Due to their extraordinary properties, single-crystalline organic nanowires (NWs) are important building blocks for future low-cost and efficient nano-optoelectronic devices. However, it remains a critical challenge to assemble organic NWs rationally in an orientation-, dimensionality- and location-controlled manner. Herein, we demonstrate a feasible method for aligned growth of single-crystalline copper phthalocyanine (CuPc) NW arrays with high density, large-area uniformity and perfect crossed alignment by using Au film as a template. The growth process was investigated in detail. The Au film was found to have a critical function in the aligned growth of NWs, but may only serve as the active site for NW nucleation because of the large surface energy, as well as direct the subsequent aligned growth. The as-prepared NWs were then transferred to construct single NW-based photoconductive devices, which demonstrated excellent photoresponse properties with robust stability and reproducibility; the device showed a high switching ratio of ∼180, a fast response speed of ∼100 ms and could stand continuous operation up to 2 h. Importantly, this strategy can be extended to other organic molecules for their synthesis of NW arrays, revealing great potential for use in the construction of large-scale high-performance functional nano-optoelectronic devices. (paper)

  15. Flexible Semitransparent Energy Harvester with High Pressure Sensitivity and Power Density Based on Laterally Aligned PZT Single-Crystal Nanowires.

    Science.gov (United States)

    Zhao, Quan-Liang; He, Guang-Ping; Di, Jie-Jian; Song, Wei-Li; Hou, Zhi-Ling; Tan, Pei-Pei; Wang, Da-Wei; Cao, Mao-Sheng

    2017-07-26

    A flexible semitransparent energy harvester is assembled based on laterally aligned Pb(Zr 0.52 Ti 0.48 )O 3 (PZT) single-crystal nanowires (NWs). Such a harvester presents the highest open-circuit voltage and a stable area power density of up to 10 V and 0.27 μW/cm 2 , respectively. A high pressure sensitivity of 0.14 V/kPa is obtained in the dynamic pressure sensing, much larger than the values reported in other energy harvesters based on piezoelectric single-crystal NWs. Furthermore, theoretical and finite element analyses also confirm that the piezoelectric voltage constant g 33 of PZT NWs is competitive to the lead-based bulk single crystals and ceramics, and the enhanced pressure sensitivity and power density are substantially linked to the flexible structure with laterally aligned PZT NWs. The energy harvester in this work holds great potential in flexible and transparent sensing and self-powered systems.

  16. Heterojunction nanowires having high activity and stability for the reduction of oxygen: Formation by self-assembly of iron phthalocyanine with single walled carbon nanotubes (FePc/SWNTs)

    KAUST Repository

    Zhu, Jia; Jia, Nana; Yang, Lijun; Su, Dong; Park, Jinseong; Choi, YongMan; Gong, Kuanping

    2014-01-01

    A self-assembly approach to preparing iron phthalocyanine/single-walled carbon nanotube (FePc/SWNT) heterojunction nanowires as a new oxygen reduction reaction (ORR) electrocatalyst has been developed by virtue of water-adjusted dispersing in 1

  17. InAs/Si Hetero-Junction Nanotube Tunnel Transistors

    KAUST Repository

    Hanna, Amir; Fahad, Hossain M.; Hussain, Muhammad Mustafa

    2015-01-01

    Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET.

  18. InAs/Si Hetero-Junction Nanotube Tunnel Transistors

    KAUST Repository

    Hanna, Amir

    2015-04-29

    Hetero-structure tunnel junctions in non-planar gate-all-around nanowire (GAA NW) tunnel FETs (TFETs) have shown significant enhancement in ‘ON’ state tunnel current over their all-silicon counterpart. Here we show the unique concept of nanotube TFET in a hetero-structure configuration that is capable of much higher drive current as opposed to that of GAA NW TFETs.Through the use of inner/outer core-shell gates, a single III-V hetero-structured nanotube TFET leverages physically larger tunneling area while achieving higher driver current (ION) and saving real estates by eliminating arraying requirement. Numerical simulations has shown that a 10 nm thin nanotube TFET with a 100 nm core gate has a 5×normalized output current compared to a 10 nm diameter GAA NW TFET.

  19. Low-leakage superconducting tunnel junctions with a single-crystal Al{sub 2}O{sub 3} barrier

    Energy Technology Data Exchange (ETDEWEB)

    Oh, S [National Institute of Standards and Technology, Boulder, CO 80305 (United States); Department of Physics, University of Illinois, Urbana, IL 61801 (United States); Cicak, K; Osborn, K D; Simmonds, R W; Pappas, D P [National Institute of Standards and Technology, Boulder, CO 80305 (United States); McDermott, R; Cooper, K B; Steffen, M; Martinis, J M [University of California, Santa Barbara, CA 93106 (United States)

    2005-10-01

    We have developed a two-step growth scheme for single-crystal Al{sub 2}O{sub 3} tunnel barriers. The barriers are epitaxially grown on single-crystal rhenium (Re) base electrodes that are grown epitaxially on a sapphire substrate, while polycrystalline Al is used as the top electrode. We show that by first growing an amorphous aluminium (Al) oxide layer at room temperature and crystallizing it at a high temperature in oxygen environment, a morphologically intact single-crystal Al{sub 2}O{sub 3} layer is obtained. Tunnel junctions fabricated from these trilayers show very low subgap leakage current. This single-crystal Al{sub 2}O{sub 3} junction may open a new venue for coherent quantum devices.

  20. Crystal lattice desolvation effects on the magnetic quantum tunneling of single-molecule magnets

    Science.gov (United States)

    Redler, G.; Lampropoulos, C.; Datta, S.; Koo, C.; Stamatatos, T. C.; Chakov, N. E.; Christou, G.; Hill, S.

    2009-09-01

    High-frequency electron paramagnetic resonance (HFEPR) and alternating current (ac) susceptibility measurements are reported for a new high-symmetry Mn12 complex, [Mn12O12(O2CCH3)16(CH3OH)4]ṡCH3OH . The results are compared to those of other high-symmetry spin S=10Mn12 single-molecule magnets (SMMs), including the original acetate, [Mn12(O2CCH3)16(H2O)4]ṡ2CH3CO2Hṡ4H2O , and the [Mn12O12(O2CCH2Br)16(H2O)4]ṡ4CH2Cl2 and [Mn12O12(O2CCH2But)16(CH3OH)4]ṡCH3OH complexes. These comparisons reveal important insights into the factors that influence the values of the effective barrier to magnetization reversal, Ueff , deduced on the basis of ac susceptibility measurements. In particular, we find that variations in Ueff can be correlated with the degree of disorder in a crystal which can be controlled by desolvating (drying) samples. This highlights the importance of careful sample handling when making measurements on SMM crystals containing volatile lattice solvents. The HFEPR data additionally provide spectroscopic evidence suggesting that the relatively weak disorder induced by desolvation influences the quantum tunneling interactions and that it is under-barrier tunneling that is responsible for a consistent reduction in Ueff that is found upon drying samples. Meanwhile, the axial anisotropy deduced from HFEPR is found to be virtually identical for all four Mn12 complexes, with no measurable reduction upon desolvation.

  1. Magnetic Quantum Tunneling in Single Molecule Magnets: Mn-12 and Others

    Science.gov (United States)

    del Barco, Enrique

    2004-03-01

    Magnetic quantum tunneling (MQT) has been studied in single molecule magnets (SMMs) using a micro-Hall effect magnetometer in a superconducting high field vector magnet system that incorporates the possibility of applying pulsed microwave fields. Mn_12-acetate has been studied extensively over the years. However, only recently the symmetry of MQT and the nature of the transverse interactions important to MQT have been determined [1,2]. Magnetic measurements in the pure quantum tunneling regime (0.6 K) illustrate that an average crystal fourfold MQT symmetry is due to local molecular environments of twofold symmetry that are rotated by 90 degrees with respect to one another, confirming that disorder which lowers the molecule symmetry is important to MQT. We have studied a subset of these lower site symmetry molecules and present evidence for a Berry phase that results from a combination of second and forth order contributions to the transverse magnetic anisotropy. These observations are consistent with high frequency EPR studies of the transverse interactions in Mn_12-acetate [3]. Finally, we discuss recent experiments in which microwave radiation is applied to modulate MQT and characterize the lifetimes and coherence times of states that are superpositions of "up" and "down" high spin-projections. [1] E. del Barco, et al., Phys. Rev. Lett. 91, 047203 (2003) [2] S. Hill, et al., Phys. Rev. Lett. 90, 217204 (2003). [3] E. del Barco, A, D. Kent, R. S. Edwards, S. I. Jones, S. Hill, J. M. North, N. S. Dalal, E. M. Rumnberger, D. N. Hendrickson and G. Christou, to be published.

  2. Effectiveness of PELOID therapy in carpal tunnel syndrome: A randomized controlled single blind study

    Science.gov (United States)

    Metin Ökmen, Burcu; Kasapoğlu Aksoy, Meliha; Güneş, Aygül; Eröksüz, Riza; Altan, Lale

    2017-08-01

    Carpal tunnel syndrome(CTS) is the most common neuromuscular cause of upper extremity disability. We aimed to investigate the effectiveness of peloid therapy in patients with CTS. This randomized, controlled, single-blind study enrolled 70 patients between the ages of 30 to 65 who had a diagnosis of either mild, mild-to-moderate, or moderate CTS. The patients were randomized into two groups using random number table. In the first group, (Group 1)( n = 35), patients were given splint (every night for 6 weeks) + peloid treatment(five consecutive days a week for 2 weeks) and in the second group, (Group 2)( n = 28), patients received splint treatment(every night for 6 weeks) alone. The patients were assessed by using visual analog scale(VAS) for pain, electroneuromyography(ENMG), the Boston Carpal Tunnel Syndrome Questionnaire(BCTSQ), hand grip strength(HGS), finger grip strength(FGS), and Short Form-12(SF-12). The data were obtained before treatment(W0), immediately after treatment(W2), and one month after treatment(W6). Both in Group 1 and 2, there was a statistically significant improvement in all the evaluation parameters at W2 and W6 when compared to W0( p < 0.05). Comparison of the groups with each other revealed significantly better results for VAS, BCTSQ, mSNCV, SF-12 in Group 1 than in Group 2 at W2( p < 0.05). There was also a statistically significant difference in favor of Group 1 for VAS, BCTSQ, FGS and MCS at W6 when compared to W0 ( p < 0.05). The results of our study demonstrated that in patients with CTS; peloid + splint treatment was more effective than splint treatment alone in pain, functionality and life quality both at after treatment(W2) and one month after treatment (W6). We may suggest peloid as a supplementary therapeutic agent in CTS.

  3. Nanowire sensors and arrays for chemical/biomolecule detection

    Science.gov (United States)

    Yun, Minhee; Lee, Choonsup; Vasquez, Richard P.; Ramanathan, K.; Bangar, M. A.; Chen, W.; Mulchandan, A.; Myung, N. V.

    2005-01-01

    We report electrochemical growth of single nanowire based sensors using e-beam patterned electrolyte channels, potentially enabling the controlled fabrication of individually addressable high density arrays. The electrodeposition technique results in nanowires with controlled dimensions, positions, alignments, and chemical compositions. Using this technique, we have fabricated single palladium nanowires with diameters ranging between 75 nm and 300 nm and conducting polymer nanowires (polypyrrole and polyaniline) with diameters between 100 nm and 200 nm. Using these single nanowires, we have successfully demonstrated gas sensing with Pd nanowires and pH sensing with polypirrole nanowires.

  4. Photocatalytic segmented nanowires and single-step iron oxide nanotube synthesis: Templated electrodeposition as all-round tool

    NARCIS (Netherlands)

    Maas, M.G.; Rodijk, E.J.B.; Maijenburg, A.W.; ten Elshof, Johan E.; Blank, David H.A.; Nielsch, K.; Fontcuberta i Morral, A.; Holt, J.K.; Thomson, C.V.

    2010-01-01

    Templated electrodeposition was used to synthesize silver-zinc oxide nanowires and iron oxide (Fe2O3) nanotubes in polycarbonate track etched (PCTE) membranes. Metal/oxide segmented nanowires were made to produce hydrogen gas from a water/methanol mixture under ultraviolet irradiation. It was

  5. The effects of changing the electrodes temperature on the tunnel magnetoresistance in the ferromagnetic single electron transistor

    Science.gov (United States)

    Ahmadi, N.; Pourali, N.; Kavaz, E.

    2018-01-01

    Ferromagnetic single electron transistor with electrodes having different temperatures is investigated and the effects of changing electrodes temperature on TMR of system are studied. A modified orthodox theory is used to study the system and to calculate the electron tunneling transition rate. The results show that the temperature of electrodes can be an effective tool to control and tune the tunnel magnetoresistance of FM-SET. Also, the effects of parameters such as resistance ratio of junctions, magnetic polarization and spin relaxation time on the behaviour of the system are studied.

  6. Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics

    KAUST Repository

    Hota, Mrinal Kanti

    2017-06-08

    We report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as charge trapping and tunneling layer. This is different from conventional flash cells, where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ~10 V. Moreover, the flash memory device shows a stable 2-bit memory performance, good reliability, including data retention for more than 104 sec and endurance performance for more than 100 cycles. The use of a common charge trapping and tunneling layer can simplify advanced flash memory fabrication.

  7. Transparent Flash Memory using Single Ta2O5 Layer for both Charge Trapping and Tunneling Dielectrics

    KAUST Repository

    Hota, Mrinal Kanti; Alshammari, Fwzah H.; Salama, Khaled N.; Alshareef, Husam N.

    2017-01-01

    We report reproducible multibit transparent flash memory in which a single solution-derived Ta2O5 layer is used simultaneously as charge trapping and tunneling layer. This is different from conventional flash cells, where two different dielectric layers are typically used. Under optimized programming/erasing operations, the memory device shows excellent programmable memory characteristics with a maximum memory window of ~10 V. Moreover, the flash memory device shows a stable 2-bit memory performance, good reliability, including data retention for more than 104 sec and endurance performance for more than 100 cycles. The use of a common charge trapping and tunneling layer can simplify advanced flash memory fabrication.

  8. Preparation and characterization of flexible asymmetric supercapacitors based on transition-metal-oxide nanowire/single-walled carbon nanotube hybrid thin-film electrodes.

    Science.gov (United States)

    Chen, Po-Chiang; Shen, Guozhen; Shi, Yi; Chen, Haitian; Zhou, Chongwu

    2010-08-24

    In the work described in this paper, we have successfully fabricated flexible asymmetric supercapacitors (ASCs) based on transition-metal-oxide nanowire/single-walled carbon nanotube (SWNT) hybrid thin-film electrodes. These hybrid nanostructured films, with advantages of mechanical flexibility, uniform layered structures, and mesoporous surface morphology, were produced by using a filtration method. Here, manganese dioxide nanowire/SWNT hybrid films worked as the positive electrode, and indium oxide nanowire/SWNT hybrid films served as the negative electrode in a designed ASC. In our design, charges can be stored not only via electrochemical double-layer capacitance from SWNT films but also through a reversible faradic process from transition-metal-oxide nanowires. In addition, to obtain stable electrochemical behavior during charging/discharging cycles in a 2 V potential window, the mass balance between two electrodes has been optimized. Our optimized hybrid nanostructured ASCs exhibited a superior device performance with specific capacitance of 184 F/g, energy density of 25.5 Wh/kg, and columbic efficiency of approximately 90%. In addition, our ASCs exhibited a power density of 50.3 kW/kg, which is 10-fold higher than obtained in early reported ASC work. The high-performance hybrid nanostructured ASCs can find applications in conformal electrics, portable electronics, and electrical vehicles.

  9. Structural and electrochemical properties of single crystalline MoV 2O8 nanowires for energy storage devices

    KAUST Repository

    Shahid, Muhammad

    2013-05-01

    We report the synthesis of MoV2O8 nanowires of high quality using spin coating followed by the thermal annealing process. Transmission electron microscopy (TEM) reveals the average diameter of synthesized nanowire about 100 nm, and average length ranges from 1 to 5 μm. The TEM analysis further confirms the <001> growth direction of MoV 2O8 nanowires. The electrochemical properties of synthesized nanowires using cyclic voltammetry show the specific capacitance 56 Fg-1 at the scan rate of 5 mV s-1 that remains 24 Fg -1 at 100 mV s-1. The electrochemical measurements suggest that the MoV2O8 nanowires can be used as a material for the future electrochemical capacitors (energy storage devices). © 2012 Published by Elsevier Inc. All rights reserved.

  10. Structural and electrochemical properties of single crystalline MoV 2O8 nanowires for energy storage devices

    KAUST Repository

    Shahid, Muhammad; Liu, Jingling; Ali, Zahid; Shakir, Imran; Warsi, Muhammad Farooq

    2013-01-01

    We report the synthesis of MoV2O8 nanowires of high quality using spin coating followed by the thermal annealing process. Transmission electron microscopy (TEM) reveals the average diameter of synthesized nanowire about 100 nm, and average length ranges from 1 to 5 μm. The TEM analysis further confirms the <001> growth direction of MoV 2O8 nanowires. The electrochemical properties of synthesized nanowires using cyclic voltammetry show the specific capacitance 56 Fg-1 at the scan rate of 5 mV s-1 that remains 24 Fg -1 at 100 mV s-1. The electrochemical measurements suggest that the MoV2O8 nanowires can be used as a material for the future electrochemical capacitors (energy storage devices). © 2012 Published by Elsevier Inc. All rights reserved.

  11. An ultrasensitive electrochemical DNA biosensor based on a copper oxide nanowires/single-walled carbon nanotubes nanocomposite

    International Nuclear Information System (INIS)

    Chen, Mei; Hou, Changjun; Huo, Danqun; Yang, Mei; Fa, Huanbao

    2016-01-01

    Graphical abstract: A novel and sensitive electrochemical biosensor based on hybrid nanocomposite consisting of copper oxide nanowires (CuO NWs) and carboxyl-functionalized single-walled carbon nanotubes (SWCNTs-COOH) was first developed for the detection of the specific-sequence target DNA. This schematic represents the fabrication procedure of our DNA biosensor. - Highlights: • An ultrasensitive DNA electrochemical biosensor was developed. • CuO NWs entangled with the SWCNTs formed a mesh structure with good conductivity. • It is the first time use of CuONWs-SWCNTs hybrid nanocomposite for DNA detection. • The biosensor is simple, selective, stable, and sensitive. • The biosensor has great potential for use in analysis of real samples. - Abstract: Here, we developed a novel and sensitive electrochemical biosensor to detect specific-sequence target DNA. The biosensor was based on a hybrid nanocomposite consisting of copper oxide nanowires (CuO NWs) and carboxyl-functionalized single-walled carbon nanotubes (SWCNTs-COOH). The resulting CuO NWs/SWCNTs layers exhibited a good differential pulse voltammetry (DPV) current response for the target DNA sequences, which we attributed to the properties of CuO NWs and SWCNTs. CuO NWs and SWCNTs hybrid composites with highly conductive and biocompatible nanostructure were characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), and cyclic voltammetry (CV). Immobilization of the probe DNA on the electrode surface was largely improved due to the unique synergetic effect of CuO NWs and SWCNTs. DPV was applied to monitor the DNA hybridization event, using adriamycin as an electrochemical indicator. Under optimal conditions, the peak currents of adriamycin were linear with the logarithm of target DNA concentrations (ranging from 1.0 × 10"−"1"4 to 1.0 × 10"−"8 M), with a detection limit of 3.5 × 10"−"1"5 M (signal/noise ratio of 3). The biosensor also showed high selectivity to

  12. An ultrasensitive electrochemical DNA biosensor based on a copper oxide nanowires/single-walled carbon nanotubes nanocomposite

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Mei [Key Laboratory of Biorheology Science and Technology, Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044 (China); Hou, Changjun, E-mail: houcj@cqu.edu.cn [Key Laboratory of Biorheology Science and Technology, Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044 (China); National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology, Chongqing University, Chongqing 400044 (China); Huo, Danqun [Key Laboratory of Biorheology Science and Technology, Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044 (China); National Key Laboratory of Fundamental Science of Micro/Nano-Device and System Technology, Chongqing University, Chongqing 400044 (China); Yang, Mei [Key Laboratory of Biorheology Science and Technology, Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044 (China); Fa, Huanbao [College of Chemistry and Chemical Engineering, Chongqing University, Chongqing 400044 (China)

    2016-02-28

    Graphical abstract: A novel and sensitive electrochemical biosensor based on hybrid nanocomposite consisting of copper oxide nanowires (CuO NWs) and carboxyl-functionalized single-walled carbon nanotubes (SWCNTs-COOH) was first developed for the detection of the specific-sequence target DNA. This schematic represents the fabrication procedure of our DNA biosensor. - Highlights: • An ultrasensitive DNA electrochemical biosensor was developed. • CuO NWs entangled with the SWCNTs formed a mesh structure with good conductivity. • It is the first time use of CuONWs-SWCNTs hybrid nanocomposite for DNA detection. • The biosensor is simple, selective, stable, and sensitive. • The biosensor has great potential for use in analysis of real samples. - Abstract: Here, we developed a novel and sensitive electrochemical biosensor to detect specific-sequence target DNA. The biosensor was based on a hybrid nanocomposite consisting of copper oxide nanowires (CuO NWs) and carboxyl-functionalized single-walled carbon nanotubes (SWCNTs-COOH). The resulting CuO NWs/SWCNTs layers exhibited a good differential pulse voltammetry (DPV) current response for the target DNA sequences, which we attributed to the properties of CuO NWs and SWCNTs. CuO NWs and SWCNTs hybrid composites with highly conductive and biocompatible nanostructure were characterized by transmission electron microscopy (TEM), scanning electron microscopy (SEM), and cyclic voltammetry (CV). Immobilization of the probe DNA on the electrode surface was largely improved due to the unique synergetic effect of CuO NWs and SWCNTs. DPV was applied to monitor the DNA hybridization event, using adriamycin as an electrochemical indicator. Under optimal conditions, the peak currents of adriamycin were linear with the logarithm of target DNA concentrations (ranging from 1.0 × 10{sup −14} to 1.0 × 10{sup −8} M), with a detection limit of 3.5 × 10{sup −15} M (signal/noise ratio of 3). The biosensor also showed high

  13. Two-photon-induced hot-electron transfer to a single molecule in a scanning tunneling microscope

    International Nuclear Information System (INIS)

    Wu, S. W.; Ho, W.

    2010-01-01

    The junction of a scanning tunneling microscope (STM) operating in the tunneling regime was irradiated with femtosecond laser pulses. A photoexcited hot electron in the STM tip resonantly tunnels into an excited state of a single molecule on the surface, converting it from the neutral to the anion. The electron-transfer rate depends quadratically on the incident laser power, suggesting a two-photon excitation process. This nonlinear optical process is further confirmed by the polarization measurement. Spatial dependence of the electron-transfer rate exhibits atomic-scale variations. A two-pulse correlation experiment reveals the ultrafast dynamic nature of photoinduced charging process in the STM junction. Results from these experiments are important for understanding photoinduced interfacial charge transfer in many nanoscale inorganic-organic structures.

  14. A temperature dependent tunneling study of the spin density wave gap in EuFe2As2 single crystals.

    Science.gov (United States)

    Dutta, Anirban; Anupam; Hossain, Z; Gupta, Anjan K

    2013-09-18

    We report temperature dependent scanning tunneling microscopy and spectroscopy measurements on single crystals of EuFe2As2 in the 15-292 K temperature range. The in situ cleaved crystals show atomic terraces with homogeneous tunnel spectra that correlate well with the spin density wave (SDW) transition at a temperature, TSDW ≈ 186 K. Above TSDW the local tunnel spectra show a small depression in the density of states (DOS) near the Fermi energy (EF). The gap becomes more pronounced upon entering the SDW state with a gap value ∼90 meV at 15 K. However, the zero bias conductance remains finite down to 15 K indicating a finite DOS at the EF in the SDW phase. Furthermore, no noticeable change is observed in the DOS at the antiferromagnetic ordering transition of Eu(2+) moments at 19 K.

  15. Electron and Cooper-pair transport across a single magnetic molecule explored with a scanning tunneling microscope

    Science.gov (United States)

    Brand, J.; Gozdzik, S.; Néel, N.; Lado, J. L.; Fernández-Rossier, J.; Kröger, J.

    2018-05-01

    A scanning tunneling microscope is used to explore the evolution of electron and Cooper-pair transport across single Mn-phthalocyanine molecules adsorbed on Pb(111) from tunneling to contact ranges. Normal-metal as well as superconducting tips give rise to a gradual transition of the Bardeen-Cooper-Schrieffer energy gap in the tunneling range into a zero-energy resonance close to and at contact. Supporting transport calculations show that in the normal-metal-superconductor junctions this resonance reflects the merging of in-gap Yu-Shiba-Rusinov states as well as the onset of Andreev reflection. For the superconductor-superconductor contacts, the zero-energy resonance is rationalized in terms of a finite Josephson current that is carried by phase-dependent Andreev and Yu-Shiba-Rusinov levels.

  16. Single-nanowire, low-bandgap hot carrier solar cells with tunable open-circuit voltage

    Science.gov (United States)

    Limpert, Steven; Burke, Adam; Chen, I.-Ju; Anttu, Nicklas; Lehmann, Sebastian; Fahlvik, Sofia; Bremner, Stephen; Conibeer, Gavin; Thelander, Claes; Pistol, Mats-Erik; Linke, Heiner

    2017-10-01

    Compared to traditional pn-junction photovoltaics, hot carrier solar cells offer potentially higher efficiency by extracting work from the kinetic energy of photogenerated ‘hot carriers’ before they cool to the lattice temperature. Hot carrier solar cells have been demonstrated in high-bandgap ferroelectric insulators and GaAs/AlGaAs heterostructures, but so far not in low-bandgap materials, where the potential efficiency gain is highest. Recently, a high open-circuit voltage was demonstrated in an illuminated wurtzite InAs nanowire with a low bandgap of 0.39 eV, and was interpreted in terms of a photothermoelectric effect. Here, we point out that this device is a hot carrier solar cell and discuss its performance in those terms. In the demonstrated devices, InP heterostructures are used as energy filters in order to thermoelectrically harvest the energy of hot electrons photogenerated in InAs absorber segments. The obtained photovoltage depends on the heterostructure design of the energy filter and is therefore tunable. By using a high-resistance, thermionic barrier, an open-circuit voltage is obtained that is in excess of the Shockley-Queisser limit. These results provide generalizable insight into how to realize high voltage hot carrier solar cells in low-bandgap materials, and therefore are a step towards the demonstration of higher efficiency hot carrier solar cells.

  17. Tuning the nanotribological behaviors of single silver nanowire through various manipulations

    Science.gov (United States)

    Zeng, Xingzhong; Peng, Yitian; Lang, Haojie; Cao, Xing'an

    2018-05-01

    Nanotribological characteristics of silver nanowires (Ag NWs) are of great importance for the reliability of their applications where involving mechanical interactions. The frictional behaviors of the Ag NWs with different lengths on SiO2/Si substrate have been investigated directly by atomic force microscopy (AFM) nanomanipulation. The relatively short and long Ag NWs behave like the rigid rods and flexible beams, respectively, and the critical aspect ratio of NWs for the two cases is found to be about 20. The relatively short NWs demonstrates three forms of motion with different frictional behaviors. The friction of the relatively long NWs increases with the bend of the NWs. The long Ag NWs display extraordinary flexibility that can be folded to different shapes, and the folded NWs show a similar frictional behavior with the rigid rods. Different simplified mechanical models are established to match the frictional behaviors of the corresponding Ag NWs. The adhesion between the Ag NWs and substrate is calculated by an indirect method based on the van der Waals force equation to assess their adhesive attraction. These findings may provide insight into the frictional characteristics of Ag NWs and contribute to the quantitative interface design and control for their applications.

  18. Micro-pulse polarization lidar at 1.5  μm using a single superconducting nanowire single-photon detector.

    Science.gov (United States)

    Qiu, Jiawei; Xia, Haiyun; Shangguan, Mingjia; Dou, Xiankang; Li, Manyi; Wang, Chong; Shang, Xiang; Lin, Shengfu; Liu, Jianjiang

    2017-11-01

    An all-fiber, eye-safe and micro-pulse polarization lidar is demonstrated with a polarization-maintaining structure, incorporating a single superconducting nanowire single-photon detector (SNSPD) at 1.5 μm. The time-division multiplexing technique is used to achieve a calibration-free optical layout. A single piece of detector is used to detect the backscatter signals at two orthogonal states in an alternative sequence. Thus, regular calibration of the two detectors in traditional polarization lidars is avoided. The signal-to-noise ratio of the lidar is guaranteed by using an SNSPD, providing high detection efficiency and low dark count noise. The linear depolarization ratio (LDR) of the urban aerosol is observed horizontally over 48 h in Hefei [N31°50'37'', E117°15'54''], when a heavy air pollution is spreading from the north to the central east of China. Phenomena of LDR bursts are detected at a location where a building is under construction. The lidar results show good agreement with the data detected from a sun photometer, a 532 nm visibility lidar, and the weather forecast information.

  19. Horizontal Assembly of Single Nanowire Diode Fabricated by p-n Junction GaN NW Grown by MOCVD

    Directory of Open Access Journals (Sweden)

    Ji-Hyeon Park

    2014-01-01

    Full Text Available Uniaxially p-n junction gallium nitride nanowires have been synthesized via metal-organic chemical vapor deposition method. Nanowires prepared on Si(111 substrates were found to grow perpendicular to the substrate, and the transmission electron microscopy studies demonstrated that the nanowires had singlecrystalline structures with a growth axis. The parallel assembly of the p-n junction nanowire was prepared on a Si substrate with a thermally grown SiO2 layer. The transport studies of horizontal gallium nitride nanowire structures assembled from p- and n-type materials show that these junctions correspond to well-defined p-n junction diodes. The p-n junction devices based on GaN nanowires suspended over the electrodes were fabricated and their electrical properties were investigated. The horizontally assembled gallium nitride nanowire diodes suspended over the electrodes exhibited a substantial increase in conductance under UV light exposure. Apart from the selectivity to different light wavelengths, high responsivity and extremely short response time have also been obtained.

  20. Occurrence of myofascial pain in patients with possible carpal tunnel syndrome - a single-blinded study

    DEFF Research Database (Denmark)

    Qerama, Erisela; Kasch, Helge; Fuglsang-Frederiksen, Anders

    2009-01-01

    There exits some similarity between symptoms of carpal tunnel syndrome (CTS) and myofascial pain related to trigger points (TPs) in the infraspinatus muscle.......There exits some similarity between symptoms of carpal tunnel syndrome (CTS) and myofascial pain related to trigger points (TPs) in the infraspinatus muscle....

  1. Porous Silicon Nanowires

    Science.gov (United States)

    Qu, Yongquan; Zhou, Hailong; Duan, Xiangfeng

    2011-01-01

    In this minreview, we summarize recent progress in the synthesis, properties and applications of a new type of one-dimensional nanostructures — single crystalline porous silicon nanowires. The growth of porous silicon nanowires starting from both p- and n-type Si wafers with a variety of dopant concentrations can be achieved through either one-step or two-step reactions. The mechanistic studies indicate the dopant concentration of Si wafers, oxidizer concentration, etching time and temperature can affect the morphology of the as-etched silicon nanowires. The porous silicon nanowires are both optically and electronically active and have been explored for potential applications in diverse areas including photocatalysis, lithium ion battery, gas sensor and drug delivery. PMID:21869999

  2. Real-Time Intracellular Measurements of ROS and RNS in Living Cells with Single Core-Shell Nanowire Electrodes.

    Science.gov (United States)

    Zhang, Xin-Wei; Qiu, Quan-Fa; Jiang, Hong; Zhang, Fu-Li; Liu, Yan-Lin; Amatore, Christian; Huang, Wei-Hua

    2017-10-09

    Nanoelectrodes allow precise and quantitative measurements of important biological processes at the single living-cell level in real time. Cylindrical nanowire electrodes (NWEs) required for intracellular measurements create a great challenge for achieving excellent electrochemical and mechanical performances. Herein, we present a facile and robust solution to this problem based on a unique SiC-core-shell design to produce cylindrical NWEs with superior mechanical toughness provided by the SiC nano-core and an excellent electrochemical performance provided by the ultrathin carbon shell that can be used as such or platinized. The use of such NWEs for biological applications is illustrated by the first quantitative measurements of ROS/RNS in individual phagolysosomes of living macrophages. As the shell material can be varied to meet any specific detection purpose, this work opens up new opportunities to monitor quantitatively biological functions occurring inside cells and their organelles. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Special structures and properties of hydrogen nanowire confined in a single walled carbon nanotube at extreme high pressure

    Directory of Open Access Journals (Sweden)

    Yueyuan Xia

    2012-06-01

    Full Text Available Extensive ab initio molecular dynamics simulations indicate that hydrogen can be confined in single walled carbon nanotubes to form high density and high pressure H2 molecular lattice, which has peculiar shell and axial structures depending on the density or pressure. The band gap of the confined H2 lattice is sensitive to the pressure. Heating the system at 2000K, the H2 lattice is firstly melted to form H2 molecular liquid, and then some of the H2 molecules dissociate accompanied by drastic molecular and atomic reactions, which have essential effect on the electronic structure of the hydrogen system. The liquid hydrogen system at 2000K is found to be a particular mixed liquid, which consists of H2 molecules, H atoms, and H-H-H trimers. The dissociated H atoms and the trimers in the liquid contribute resonance electron states at the Fermi energy to change the material properties substantially. Rapidly cooling the system from 2000K to 0.01 K, the mixed liquid is frozen to form a mixed solid melt with a clear trend of band gap closure. It indicates that this solid melt may become a superconducting nanowire when it is further compressed.

  4. Spectroscopic characterizations of individual single-crystalline GaN nanowires in visible/ultra-violet regime.

    Science.gov (United States)

    Wu, Chien-Ting; Chu, Ming-Wen; Chen, Li-Chyong; Chen, Kuei-Hsien; Chen, Chun-Wei; Chen, Cheng Hsuan

    2010-10-01

    Spectroscopic investigations of individual single-crystalline GaN nanowires with a lateral dimensions of approximately 30-90nm were performed using the spatially resolved technique of electron energy-loss spectroscopy in conjunction with scanning transmission electron microscope showing a 2-A electron probe. Positioning the electron probe upon transmission impact and at aloof setup with respect to the nanomaterials, we explored two types of surface modes intrinsic to GaN, surface exciton polaritons at approximately 8.3eV (approximately 150nm) and surface guided modes at 3.88eV (approximately 320nm), which are in visible/ultra-violet spectral regime above GaN bandgap of approximately 3.3eV (approximately 375nm) and difficult to access by conventional optical spectroscopies. The explorations of these electromagnetic resonances might expand the current technical interests in GaN nanomaterials from the visible/UV range below approximately 3.5eV to the spectral regime further beyond.

  5. Direct assessment of p-n junctions in single GaN nanowires by Kelvin probe force microscopy

    Science.gov (United States)

    Minj, Albert; Cros, Ana; Auzelle, Thomas; Pernot, Julien; Daudin, Bruno

    2016-09-01

    Making use of Kelvin probe force microscopy, in dark and under ultraviolet illumination, we study the characteristics of p-n junctions formed along the axis of self-organized GaN nanowires (NWs). We map the contact potential difference of the single NW p-n junctions to locate the space charge region and directly measure the depletion width and the junction voltage. Simulations indicate a shrinkage of the built-in potential for NWs with small diameter due to surface band bending, in qualitative agreement with the measurements. The photovoltage of the NW/substrate contact is studied by analyzing the response of NW segments with p- and n-type doping under illumination. Our results show that the shifts of the Fermi levels, and not the changes in surface band bending, are the most important effects under above band-gap illumination. The quantitative electrical information obtained here is important for the use of NW p-n junctions as photovoltaic or rectifying devices at the nanoscale, and is especially relevant since the technique does not require the formation of ohmic contacts to the NW junction.

  6. Single In x Ga1-x As nanowire/p-Si heterojunction based nano-rectifier diode.

    Science.gov (United States)

    Sarkar, K; Palit, M; Guhathakurata, S; Chattopadhyay, S; Banerji, P

    2017-09-20

    Nanoscale power supply units will be indispensable for fabricating next generation smart nanoelectronic integrated circuits. Fabrication of nanoscale rectifier circuits on a Si platform is required for integrating nanoelectronic devices with on-chip power supply units. In the present study, a nanorectifier diode based on a single standalone In x Ga 1-x As nanowire/p-Si (111) heterojunction fabricated by metal organic chemical vapor deposition technique has been studied. The nanoheterojunction diodes have shown good rectification and fast switching characteristics. The rectification characteristics of the nanoheterojunction have been demonstrated by different standard waveforms of sinusoidal, square, sawtooth and triangular for two different frequencies of 1 and 0.1 Hz. Reverse recovery time of around 150 ms has been observed in all wave response. A half wave rectifier circuit with a simple capacitor filter has been assembled with this nanoheterojunction diode which provides 12% output efficiency. The transport of carriers through the heterojunction is investigated. The interface states density of the nanoheterojunction has also been determined. Occurrence of output waveforms incommensurate with the input is attributed to higher series resistance of the diode which is further explained considering the dimension of p-side and n-side of the junction. The sudden change of ideality factor after 1.7 V bias is attributed to recombination through interface states in space charge region. Low interface states density as well as high rectification ratio makes this heterojunction diode a promising candidate for future nanoscale electronics.

  7. Numerical method to optimize the polar-azimuthal orientation of infrared superconducting-nanowire single-photon detectors.

    Science.gov (United States)

    Csete, Mária; Sipos, Áron; Najafi, Faraz; Hu, Xiaolong; Berggren, Karl K

    2011-11-01

    A finite-element method for calculating the illumination-dependence of absorption in three-dimensional nanostructures is presented based on the radio frequency module of the Comsol Multiphysics software package (Comsol AB). This method is capable of numerically determining the optical response and near-field distribution of subwavelength periodic structures as a function of illumination orientations specified by polar angle, φ, and azimuthal angle, γ. The method was applied to determine the illumination-angle-dependent absorptance in cavity-based superconducting-nanowire single-photon detector (SNSPD) designs. Niobium-nitride stripes based on dimensions of conventional SNSPDs and integrated with ~ quarter-wavelength hydrogen-silsesquioxane-filled nano-optical cavity and covered by a thin gold film acting as a reflector were illuminated from below by p-polarized light in this study. The numerical results were compared to results from complementary transfer-matrix-method calculations on composite layers made of analogous film-stacks. This comparison helped to uncover the optical phenomena contributing to the appearance of extrema in the optical response. This paper presents an approach to optimizing the absorptance of different sensing and detecting devices via simultaneous numerical optimization of the polar and azimuthal illumination angles. © 2011 Optical Society of America

  8. High-performance single CdS nanowire (nanobelt) Schottky junction solar cells with Au/graphene Schottky electrodes.

    Science.gov (United States)

    Ye, Yu; Dai, Yu; Dai, Lun; Shi, Zujin; Liu, Nan; Wang, Fei; Fu, Lei; Peng, Ruomin; Wen, Xiaonan; Chen, Zhijian; Liu, Zhongfan; Qin, Guogang

    2010-12-01

    High-performance single CdS nanowire (NW) as well as nanobelt (NB) Schottky junction solar cells were fabricated. Au (5 nm)/graphene combined layers were used as the Schottky contact electrodes to the NWs (NBs). Typical as-fabricated NW solar cell shows excellent photovoltaic behavior with an open circuit voltage of ∼0.15 V, a short circuit current of ∼275.0 pA, and an energy conversion efficiency of up to ∼1.65%. The physical mechanism of the combined Schottky electrode was discussed. We attribute the prominent capability of the devices to the high-performance Schottky combined electrode, which has the merits of low series resistance, high transparency, and good Schottky contact to the CdS NW (NB). Besides, a promising site-controllable patterned graphene transfer method, which has the advantages of economizing graphene material and free from additional etching process, was demonstrated in this work. Our results suggest that semiconductor NWs (NBs) are promising materials for novel solar cells, which have potential application in integrated nano-optoelectronic systems.

  9. Absence of a spin-signature from a single Ho adatom as probed by spin-sensitive tunneling.

    Science.gov (United States)

    Steinbrecher, M; Sonntag, A; dos Santos Dias, M; Bouhassoune, M; Lounis, S; Wiebe, J; Wiesendanger, R; Khajetoorians, A A

    2016-02-03

    Whether rare-earth materials can be used as single-atom magnetic memory is an ongoing debate in recent literature. Here we show, by inelastic and spin-resolved scanning tunnelling-based methods, that we observe a strong magnetic signal and excitation from Fe atoms adsorbed on Pt(111), but see no signatures of magnetic excitation or spin-based telegraph noise for Ho atoms. Moreover, we observe that the indirect exchange field produced by a single Ho atom is negligible, as sensed by nearby Fe atoms. We demonstrate, using ab initio methods, that this stems from a comparatively weak coupling of the Ho 4f electrons with both tunnelling electrons and substrate-derived itinerant electrons, making both magnetic coupling and detection very difficult when compared to 3d elements. We discuss these results in the context of ongoing disputes and clarify important controversies.

  10. Ultrafast terahertz control of extreme tunnel currents through single atoms on a silicon surface

    DEFF Research Database (Denmark)

    Jelic, Vedran; Iwaszczuk, Krzysztof; Nguyen, Peter H.

    2017-01-01

    scanning tunnelling microscopy (THz-STM) in ultrahigh vacuum as a new platform for exploring ultrafast non-equilibrium tunnelling dynamics with atomic precision. Extreme terahertz-pulse-driven tunnel currents up to 10(7) times larger than steady-state currents in conventional STM are used to image...... terahertz-induced band bending and non-equilibrium charging of surface states opens new conduction pathways to the bulk, enabling extreme transient tunnel currents to flow between the tip and sample.......Ultrafast control of current on the atomic scale is essential for future innovations in nanoelectronics. Extremely localized transient electric fields on the nanoscale can be achieved by coupling picosecond duration terahertz pulses to metallic nanostructures. Here, we demonstrate terahertz...

  11. Effects of temperature and other experimental variables on single molecule vibrational spectroscopy with the scanning tunneling microscope

    International Nuclear Information System (INIS)

    Lauhon, L. J.; Ho, W.

    2001-01-01

    Inelastic electron tunneling spectroscopy (IETS) was performed on single molecules with a variable temperature scanning tunneling microscope. The peak intensity, width, position, and line shape of single molecule vibrational spectra were studied as a function of temperature, modulation bias, bias polarity, and tip position for the (C--H,C--D) stretching vibration of acetylene (C 2 H 2 ,C 2 D 2 ) on Cu(001). The temperature broadening of vibrational peaks was found to be a consequence of Fermi smearing as in macroscopic IETS. The modulation broadening of vibrational peaks assumed the expected form for IETS. Extrapolation of the peak width to zero temperature and modulation suggested an intrinsic width of ∼4 meV due primarily to instrumental broadening. The inelastic tunneling cross section at negative bias was reduced by a factor of 1.7 for the C--H stretch mode. Low energy modes of other molecules did not show such a reduction. There was no evidence of a tip-induced Stark shift in the peak positions. The spatial variation of the inelastic signal was measured to determine the junction stability necessary for the acquisition of single molecule vibrational spectra

  12. Single-electron charging effects and implications for tunneling measurements of the high-T/sub c/ superconductors

    International Nuclear Information System (INIS)

    Barner, J.B.; Honkanen, M.J.; Ruggiero, S.T.; Mullen, K.; Ben-Jacob, E.; Pelton, A.R.; Michigan Univ., Ann Arbor, MI

    1989-01-01

    The authors present a theory for the dynamics of two voltage-biased, ultra-small-capacitance tunnel junctions connected in series when one or more electrodes are superconducting and experiments performed on parallel arrays of such junctions. Using the semiclassical model, they find that the I-V characteristics display steps and therefore multiple peaks in dI/dV, corresponding to the time-average occupation of the interjunction region by integral numbers of electrons. The voltage at which the first step is located depends on the superconducting gap, Δ(T), and the capacitances of the junctions. The spacing between subsequent steps depends solely on the capacitances. They discuss electron tunneling results performed on metal/Al/sub 2/O/sub 3//2-10 nm-diameter metal particles/Al/sub 2/O/sub 3//metal junctions where this multiple-peak structure is observed. They present preliminary tunneling results in junctions employing Pb-particles, where they observe a shift of the peaks when the sample is cooled below T/sub c/ of Pb consistent with theory. Taken together, these results indicate that the multiple-peak structure commonly observed in tunneling data of high-T/sub c/ oxide superconductors can be explained in terms of charging effects in a material with a single superconducting gap. Finally, they discuss possible applications in a new type of transistor element

  13. A silicon nanowire heater and thermometer

    Science.gov (United States)

    Zhao, Xingyan; Dan, Yaping

    2017-07-01

    In the thermal conductivity measurements of thermoelectric materials, heaters and thermometers made of the same semiconducting materials under test, forming a homogeneous system, will significantly simplify fabrication and integration. In this work, we demonstrate a high-performance heater and thermometer made of single silicon nanowires (SiNWs). The SiNWs are patterned out of a silicon-on-insulator wafer by CMOS-compatible fabrication processes. The electronic properties of the nanowires are characterized by four-probe and low temperature Hall effect measurements. The I-V curves of the nanowires are linear at small voltage bias. The temperature dependence of the nanowire resistance allows the nanowire to be used as a highly sensitive thermometer. At high voltage bias, the I-V curves of the nanowire become nonlinear due to the effect of Joule heating. The temperature of the nanowire heater can be accurately monitored by the nanowire itself as a thermometer.

  14. Quantum optics with nanowires (Conference Presentation)

    Science.gov (United States)

    Zwiller, Val

    2017-02-01

    Nanowires offer new opportunities for nanoscale quantum optics; the quantum dot geometry in semiconducting nanowires as well as the material composition and environment can be engineered with unprecedented freedom to improve the light extraction efficiency. Quantum dots in nanowires are shown to be efficient single photon sources, in addition because of the very small fine structure splitting, we demonstrate the generation of entangled pairs of photons from a nanowire. By doping a nanowire and making ohmic contacts on both sides, a nanowire light emitting diode can be obtained with a single quantum dot as the active region. Under forward bias, this will act as an electrically pumped source of single photons. Under reverse bias, an avalanche effect can multiply photocurrent and enables the detection of single photons. Another type of nanowire under study in our group is superconducting nanowires for single photon detection, reaching efficiencies, time resolution and dark counts beyond currently available detectors. We will discuss our first attempts at combining semiconducting nanowire based single photon emitters and superconducting nanowire single photon detectors on a chip to realize integrated quantum circuits.

  15. Long-range protein electron transfer observed at the single-molecule level: In situ mapping of redox-gated tunneling resonance

    DEFF Research Database (Denmark)

    Chi, Qijin; Farver, O; Ulstrup, Jens

    2005-01-01

    on the redox potential. Maximum resonance appears around the equilibrium redox potential of azurin with an on/off current ratio of approximate to 9. Simulation analyses, based on a two-step interfacial ET model for the scanning tunneling microscopy redox process, were performed and provide quantitative......A biomimetic long-range electron transfer (ET) system consisting of the blue copper protein azurin, a tunneling barrier bridge, and a gold single-crystal electrode was designed on the basis of molecular wiring self-assembly principles. This system is sufficiently stable and sensitive in a quasi...... constants display tunneling features with distance-decay factors of 0.83 and 0.91 angstrom(-1) in H2O and D2O, respectively. Redox-gated tunneling resonance is observed in situ at the single-molecule level by using electrochemical scanning tunneling microscopy, exhibiting an asymmetric dependence...

  16. Seismic Design of a Single Bored Tunnel: Longitudinal Deformations and Seismic Joints

    Science.gov (United States)

    Oh, J.; Moon, T.

    2018-03-01

    The large diameter bored tunnel passing through rock and alluvial deposits subjected to seismic loading is analyzed for estimating longitudinal deformations and member forces on the segmental tunnel liners. The project site has challenges including high hydrostatic pressure, variable ground profile and high seismic loading. To ensure the safety of segmental tunnel liner from the seismic demands, the performance-based two-level design earthquake approach, Functional Evaluation Earthquake and Safety Evaluation Earthquake, has been adopted. The longitudinal tunnel and ground response seismic analyses are performed using a three-dimensional quasi-static linear elastic and nonlinear elastic discrete beam-spring elements to represent segmental liner and ground spring, respectively. Three components (longitudinal, transverse and vertical) of free-field ground displacement-time histories evaluated from site response analyses considering wave passage effects have been applied at the end support of the strain-compatible ground springs. The result of the longitudinal seismic analyses suggests that seismic joint for the mitigation measure requiring the design deflection capacity of 5-7.5 cm is to be furnished at the transition zone between hard and soft ground condition where the maximum member forces on the segmental liner (i.e., axial, shear forces and bending moments) are induced. The paper illustrates how detailed numerical analyses can be practically applied to evaluate the axial and curvature deformations along the tunnel alignment under difficult ground conditions and to provide the seismic joints at proper locations to effectively reduce the seismic demands below the allowable levels.

  17. Landau-Zener tunneling in the presence of weak intermolecular interactions in a crystal of Mn4 single-molecule magnets

    Science.gov (United States)

    Wernsdorfer, W.; Bhaduri, S.; Vinslava, A.; Christou, G.

    2005-12-01

    A Mn4 single-molecule magnet (SMM), with a well-isolated spin ground state of S=9/2 , is used as a model system to study Landau-Zener (LZ) tunneling in the presence of weak intermolecular dipolar and exchange interactions. The anisotropy constants D and B are measured with minor hysteresis loops. A transverse field is used to tune the tunnel splitting over a large range. Using the LZ and inverse LZ method, it is shown that these interactions play an important role in the tunnel rates. Three regions are identified: (i) at small transverse fields, tunneling is dominated by single tunnel transitions, (ii) at intermediate transverse fields, the measured tunnel rates are governed by reshuffling of internal fields, and (iii) at larger transverse fields, the magnetization reversal starts to be influenced by the direct relaxation process, and many-body tunnel events may occur. The hole digging method is used to study the next-nearest-neighbor interactions. At small external fields, it is shown that magnetic ordering occurs which does not quench tunneling. An applied transverse field can increase the ordering rate. Spin-spin cross-relaxations, mediated by dipolar and weak exchange interactions, are proposed to explain additional quantum steps.

  18. Near-unity efficiency, single-photon sources based on tapered photonic nanowires

    DEFF Research Database (Denmark)

    Bleuse, Joël; Munsch, Mathieu; Claudon, Julien

    2012-01-01

    Single-photon emission from excitons in InAs Quantum Dots (QD) embedded in GaAs Tapered Photonic Wires (TPW) already demonstrated a 0.72 collection efficiency, with TPWs were the apex is the sharp end of the cone. Going to alternate designs, still based on the idea of the adiabatic deconfinement...... of the quasi-Gaussian emission mode, but with inverted TPW where the apex is the cone's base, leads to even larger efficiencies. In addition, these inverted TPWs make the electric pumping of the emitters compatible with these large efficiencies....

  19. Angular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments

    KAUST Repository

    Mohammed, Hanan

    2017-06-22

    Magnetization reversal in segmented Co/Ni nanowires with varying number of segments was studied using angular Magnetoresistance (MR) measurements on isolated nanowires. The MR measurements offer an insight into the pinning of domain walls within the nanowires. Angular MR measurements were performed on nanowires with two and multiple segments by varying the angle between the applied magnetic field and nanowire (−90° ≤θ≤90°). The angular MR measurements reveal that at lower values of θ the switching fields are nearly identical for the multisegmented and two-segmented nanowires, whereas at higher values of θ, a decrease in the switching field is observed in the case of two segmented nanowires. The two segmented nanowires generally exhibit a single domain wall pinning event, whereas an increased number of pinning events are characteristic of the multisegmented nanowires at higher values of θ. In-situ magnetic force microscopy substantiates reversal by domain wall nucleation and propagation in multisegmented nanowires.

  20. Angular Magnetoresistance of Nanowires with Alternating Cobalt and Nickel Segments

    KAUST Repository

    Mohammed, Hanan; Corte-Leon, H.; Ivanov, Yurii P.; Moreno, J. A.; Kazakova, O.; Kosel, Jü rgen

    2017-01-01

    Magnetization reversal in segmented Co/Ni nanowires with varying number of segments was studied using angular Magnetoresistance (MR) measurements on isolated nanowires. The MR measurements offer an insight into the pinning of domain walls within the nanowires. Angular MR measurements were performed on nanowires with two and multiple segments by varying the angle between the applied magnetic field and nanowire (−90° ≤θ≤90°). The angular MR measurements reveal that at lower values of θ the switching fields are nearly identical for the multisegmented and two-segmented nanowires, whereas at higher values of θ, a decrease in the switching field is observed in the case of two segmented nanowires. The two segmented nanowires generally exhibit a single domain wall pinning event, whereas an increased number of pinning events are characteristic of the multisegmented nanowires at higher values of θ. In-situ magnetic force microscopy substantiates reversal by domain wall nucleation and propagation in multisegmented nanowires.

  1. Semiconductor nanowires and templates for electronic applications

    Energy Technology Data Exchange (ETDEWEB)

    Ying, Xiang

    2009-07-15

    This thesis starts by developing a platform for the organized growth of nanowires directly on a planar substrate. For this, a method to fabricate horizontal porous alumina membranes is studied. The second part of the thesis focuses on the study of nanowires. It starts by the understanding of the growth mechanisms of germanium nanowires and follows by the structural and electrical properties at the single nanowire level. Horizontally aligned porous anodic alumina (PAA) was used as a template for the nanowire synthesis. Three PAA arrangements were studied: - high density membranes - micron-sized fingers - multi-contacts Membranes formed by a high density of nanopores were obtained by anodizing aluminum thin films. Metallic and semiconducting nanowires were synthesized into the PAA structures via DC deposition, pulsed electro-depostion and CVD growth. The presence of gold, copper, indium, nickel, tellurium, and silicon nanowires inside PAA templates was verified by SEM and EDX analysis. Further, room-temperature transport measurements showed that the pores are completely filled till the bottom of the pores. In this dissertation, single crystalline and core-shell germanium nanowires are synthesized using indium and bismuth as catalyst in a chemical vapor deposition procedure with germane (GeH{sub 4}) as growth precursor. A systematic growth study has been performed to obtain high aspect-ratio germanium nanowires. The influence of the growth conditions on the final morphology and the crystalline structure has been determined via scanning electron microscopy (SEM) and high-resolution transmission electron microscopy (HRTEM). In the case of indium catalyzed germanium nanowires, two different structures were identified: single crystalline and crystalline core-amorphous shell. The preferential growth axis of both kinds of nanowires is along the [110] direction. The occurrence of the two morphologies was found to only depend on the nanowire dimension. In the case of bismuth

  2. Tunneling couplings in discrete lattices, single-particle band structure, and eigenstates of interacting atom pairs

    International Nuclear Information System (INIS)

    Piil, Rune; Moelmer, Klaus

    2007-01-01

    By adjusting the tunneling couplings over longer than nearest-neighbor distances, it is possible in discrete lattice models to reproduce the properties of the lowest energy band of a real, continuous periodic potential. We propose to include such terms in problems with interacting particles, and we show that they have significant consequences for scattering and bound states of atom pairs in periodic potentials

  3. Precise Placement of Metallic Nanowires on a Substrate by Localized Electric Fields and Inter-Nanowire Electrostatic Interaction

    Directory of Open Access Journals (Sweden)

    U Hyeok Choi

    2017-10-01

    Full Text Available Placing nanowires at the predetermined locations on a substrate represents one of the significant hurdles to be tackled for realization of heterogeneous nanowire systems. Here, we demonstrate spatially-controlled assembly of a single nanowire at the photolithographically recessed region at the electrode gap with high integration yield (~90%. Two popular routes, such as protruding electrode tips and recessed wells, for spatially-controlled nanowire alignment, are compared to investigate long-range dielectrophoretic nanowire attraction and short-range nanowire-nanowire electrostatic interaction for determining the final alignment of attracted nanowires. Furthermore, the post-assembly process has been developed and tested to make a robust electrical contact to the assembled nanowires, which removes any misaligned ones and connects the nanowires to the underlying electrodes of circuit.

  4. Highly efficient photonic nanowire single-photon sources for quantum information applications

    DEFF Research Database (Denmark)

    Gregersen, Niels; Claudon, J.; Munsch, M.

    2013-01-01

    to a collection efficiency of only 1-2 %, and efficient light extraction thus poses a major challenge in SPS engineering. Initial efforts to improve the efficiency have exploited cavity quantum electrodynamics (cQED) to efficiently couple the emitted photons to the optical cavity mode. An alternative approach......Within the emerging field of optical quantum information processing, the current challenge is to construct the basic building blocks for the quantum computing and communication systems. A key component is the singlephoton source (SPS) capable of emitting single photons on demand. Ideally, the SPS...... must feature near-unity efficiency, where the efficiency is defined as the number of detected photons per trigger, the probability g(2)(τ=0) of multi-photon emission events should be 0 and the emitted photons are required to be indistinguishable. An optically or electrically triggered quantum light...

  5. Revealing energy level structure of individual quantum dots by tunneling rate measured by single-electron sensitive electrostatic force spectroscopy.

    Science.gov (United States)

    Roy-Gobeil, Antoine; Miyahara, Yoichi; Grutter, Peter

    2015-04-08

    We present theoretical and experimental studies of the effect of the density of states of a quantum dot (QD) on the rate of single-electron tunneling that can be directly measured by electrostatic force microscopy (e-EFM) experiments. In e-EFM, the motion of a biased atomic force microscope cantilever tip modulates the charge state of a QD in the Coulomb blockade regime. The charge dynamics of the dot, which is detected through its back-action on the capacitavely coupled cantilever, depends on the tunneling rate of the QD to a back-electrode. The density of states of the QD can therefore be measured through its effect on the energy dependence of tunneling rate. We present experimental data on individual 5 nm colloidal gold nanoparticles that exhibit a near continuous density of state at 77 K. In contrast, our analysis of already published data on self-assembled InAs QDs at 4 K clearly reveals discrete degenerate energy levels.

  6. Examining the effect of adverse geological conditions on jamming of a single shielded TBM in Uluabat tunnel using numerical modeling

    Directory of Open Access Journals (Sweden)

    Rohola Hasanpour

    2017-12-01

    Full Text Available Severe shield jamming events have been reported during excavation of Uluabat tunnel through adverse geological conditions, which resulted in several stoppages at advancing a single shielded tunnel boring machine (TBM. To study the jamming mechanism, three-dimensional (3D simulation of the machine and surrounding ground was implemented using the finite difference code FLAC3D. Numerical analyses were performed for three sections along the tunnel with a higher risk for entrapment due to the combination of overburden and geological conditions. The computational results including longitudinal displacement contours and ground pressure profiles around the shield allow a better understanding of ground behavior within the excavation. Furthermore, they allow realistically assessing the impact of adverse geological conditions on shield jamming. The calculated thrust forces, which are required to move the machine forward, are in good agreement with field observations and measurements. It also proves that the numerical analysis can effectively be used for evaluating the effect of adverse geological environment on TBM entrapments and can be applied to prediction of loads on the shield and pre-estimating of the required thrust force during excavation through adverse ground conditions.

  7. Blueshift of electroluminescence from single n-InP nanowire/p-Si heterojunctions due to the Burstein-Moss effect

    International Nuclear Information System (INIS)

    Liu, C; Dai, L; You, L P; Xu, W J; Qin, G G

    2008-01-01

    Single-crystalline n-type InP nanowires (NWs) with different electron concentrations were synthesized on Si substrates via the vapor phase transport method. The electrical properties of the InP nanowires were investigated by fabricating and measuring single NW field-effect transistors (FETs). Single InP NW/p + -Si heterojunctions were fabricated, and electroluminescence (EL) spectra from them were studied. It was found that both the photoluminescence (PL) spectra of the InP NWs and the EL spectra of the heterojunctions blueshift from 920 to 775 nm when the electron concentrations of the InP NWs increase from 2 x 10 17 to 1.4 x 10 19 cm -3 . The blueshifts can be attributed to the Burstein-Moss effect rather than the quantum confinement effect in the InP NWs. The large blueshifts observed in this study indicate a potential application of InP NWs in nano-multicolour displays.

  8. Phonon Confinement Induced Non-Concomitant Near-Infrared Emission along a Single ZnO Nanowire: Spatial Evolution Study of Phononic and Photonic Properties

    Directory of Open Access Journals (Sweden)

    Po-Hsun Shih

    2017-10-01

    Full Text Available The impact of mixed defects on ZnO phononic and photonic properties at the nanoscale is only now being investigated. Here we report an effective strategy to study the distribution of defects along the growth direction of a single ZnO nanowire (NW, performed qualitatively as well as quantitatively using energy dispersive spectroscopy (EDS, confocal Raman-, and photoluminescence (PL-mapping technique. A non-concomitant near-infrared (NIR emission of 1.53 ± 0.01 eV was observed near the bottom region of 2.05 ± 0.05 μm along a single ZnO NW and could be successfully explained by the radiative recombination of shallowly trapped electrons V_O^(** with deeply trapped holes at V_Zn^''. A linear chain model modified from a phonon confinement model was used to describe the growth of short-range correlations between the mean distance of defects and its evolution with spatial position along the axial growth direction by fitting the E2H mode. Our results are expected to provide new insights into improving the study of the photonic and photonic properties of a single nanowire.

  9. Tunneling works. Tunnel koji

    Energy Technology Data Exchange (ETDEWEB)

    Higo, M [Hazam Gumi, Ltd., Tokyo (Japan)

    1991-10-25

    A mountain tunneling method for rock-beds used to be applied mainly to construction works in the mountains under few restrictions by environmental problems. However, construction works near residential sreas have been increasing. There are such enviromental problems due to tunneling works as vibration, noise, lowering of ground-water level, and influences on other structures. This report mainly describes the measurement examples of vibration and noise accompanied with blasting and the effects of the measures to lessen such influences. When the tunneling works for the railroad was carried out on the natural ground mainly composed of basalt, vibration of the test blasting was measured at three stations with piezoelectric accelerometers. Then, ordinary blasting, mutistage blasting, and ABM blasting methods were used properly besed on the above results, and only a few complaints were made. In the different works, normal noise and low-frequency sound were mesured at 22 stations around the pit mouth. As countermeasures for noise, sound-proof sheets, walls, and single and double doors were installed and foundto be effective. 1 ref., 6 figs., 1 tab.

  10. Energy relaxation between low lying tunnel split spin-states of the single molecule magnet Ni4

    Science.gov (United States)

    de Loubens, G.; Chaves-O'Flynn, G. D.; Kent, A. D.; Ramsey, C.; Del Barco, E.; Beedle, C.; Hendrickson, D. N.

    2007-03-01

    We have developed integrated magnetic sensors to study quantum tunneling of magnetization (QTM) in single molecule magnet (SMMs) single crystals. These sensors incorporate a microstrip resonator (30 GHz) and a micro-Hall effect magnetometer. They have been used to investigate the relaxation rates between the 2 lowest lying tunnel split spin-states of the SMM Ni4 (S=4). EPR spectroscopy at 30 GHz and 0.4 K and concurrent magnetization measurements of several Ni4 single crystals are presented. EPR enables measurement of the energy splitting between the 2 lowest lying superposition states as a function of the longitudinal and transverse fields. The energy relaxation rate is determined in two ways. First, in cw microwave experiments the change in spin-population together with the microwave absorption directly gives the relaxation time from energy conservation in steady-state. Second, direct time-resolved measurements of the magnetization with pulsed microwave radiation have been performed. The relaxation time is found to vary by several orders of magnitude in different crystals, from a few seconds down to smaller than 100 μs. We discuss this and the form of the relaxation found for different crystals and pulse conditions.

  11. Electrically Injected UV-Visible Nanowire Lasers

    Energy Technology Data Exchange (ETDEWEB)

    Wang, George T.; Li, Changyi; Li, Qiming; Liu, Sheng; Wright, Jeremy Benjamin; Brener, Igal; Luk, Ting -Shan; Chow, Weng W.; Leung, Benjamin; Figiel, Jeffrey J.; Koleske, Daniel D.; Lu, Tzu-Ming

    2015-09-01

    There is strong interest in minimizing the volume of lasers to enable ultracompact, low-power, coherent light sources. Nanowires represent an ideal candidate for such nanolasers as stand-alone optical cavities and gain media, and optically pumped nanowire lasing has been demonstrated in several semiconductor systems. Electrically injected nanowire lasers are needed to realize actual working devices but have been elusive due to limitations of current methods to address the requirement for nanowire device heterostructures with high material quality, controlled doping and geometry, low optical loss, and efficient carrier injection. In this project we proposed to demonstrate electrically injected single nanowire lasers emitting in the important UV to visible wavelengths. Our approach to simultaneously address these challenges is based on high quality III-nitride nanowire device heterostructures with precisely controlled geometries and strong gain and mode confinement to minimize lasing thresholds, enabled by a unique top-down nanowire fabrication technique.

  12. Vertically aligned nanowires from boron-doped diamond.

    Science.gov (United States)

    Yang, Nianjun; Uetsuka, Hiroshi; Osawa, Eiji; Nebel, Christoph E

    2008-11-01

    Vertically aligned diamond nanowires with controlled geometrical properties like length and distance between wires were fabricated by use of nanodiamond particles as a hard mask and by use of reactive ion etching. The surface structure, electronic properties, and electrochemical functionalization of diamond nanowires were characterized by atomic force microscopy (AFM) and scanning tunneling microscopy (STM) as well as electrochemical techniques. AFM and STM experiments show that diamond nanowire etched for 10 s have wire-typed structures with 3-10 nm in length and with typically 11 nm spacing in between. The electrode active area of diamond nanowires is enhanced by a factor of 2. The functionalization of nanowire tips with nitrophenyl molecules is characterized by STM on clean and on nitrophenyl molecule-modified diamond nanowires. Tip-modified diamond nanowires are promising with respect to biosensor applications where controlled biomolecule bonding is required to improve chemical stability and sensing significantly.

  13. Molecular electronics of a single photosystem I reaction center: Studies with scanning tunneling microscopy and spectroscopy

    Energy Technology Data Exchange (ETDEWEB)

    Lee, I.; Lee, J.W.; Warmack, R.J.; Allison, D.P.; Greenbaum, E. [Oak Ridge National Lab., TN (United States)

    1995-03-14

    Thylakoids and photosystem I (PSI) reaction centers were imaged by scanning tunneling microscopy. The thylakoids were isolated from spinach chloroplasts, and PSI reaction centers were extracted from thylakoid membranes. Because thylakoids are relatively thick nonconductors, they were sputter-coated with Pd/Au before imaging. PSI photosynthetic centers and chemically platinized PSI were investigated without sputter-coating. They were mounted on flat gold substrates that had been treated with mercaptoacetic acid to help bind the proteins. With tunneling spectroscopy, the PSI centers displayed a semiconductor-like response with a band gap of 1.8 eV. Lightly platinized (platinized for 1 hr) centers displayed diode-like conduction that resulted in dramatic contrast changes between images taken with opposite bias voltages. The electronic properties of this system were stable under long-term storage. 42 refs., 7 figs.

  14. Electronic single-molecule identification of carbohydrate isomers by recognition tunnelling

    Science.gov (United States)

    Im, Jongone; Biswas, Sovan; Liu, Hao; Zhao, Yanan; Sen, Suman; Biswas, Sudipta; Ashcroft, Brian; Borges, Chad; Wang, Xu; Lindsay, Stuart; Zhang, Peiming

    2016-12-01

    Carbohydrates are one of the four main building blocks of life, and are categorized as monosaccharides (sugars), oligosaccharides and polysaccharides. Each sugar can exist in two alternative anomers (in which a hydroxy group at C-1 takes different orientations) and each pair of sugars can form different epimers (isomers around the stereocentres connecting the sugars). This leads to a vast combinatorial complexity, intractable to mass spectrometry and requiring large amounts of sample for NMR characterization. Combining measurements of collision cross section with mass spectrometry (IM-MS) helps, but many isomers are still difficult to separate. Here, we show that recognition tunnelling (RT) can classify many anomers and epimers via the current fluctuations they produce when captured in a tunnel junction functionalized with recognition molecules. Most importantly, RT is a nanoscale technique utilizing sub-picomole quantities of analyte. If integrated into a nanopore, RT would provide a unique approach to sequencing linear polysaccharides.

  15. Design model for bending vibrations of single-stage tunnel fan rotor

    Science.gov (United States)

    Krasyuk, AM; Kosykh, PV

    2018-03-01

    Using of one-mass model of tunnel fan rotor is justified for estimation calculation of the natural bending vibrations frequency during the design stage. It’s shown that the evaluative computation of the main axial tunnel fan at the early design stage yields the acceptable accuracy. It is shown that after completion of the design, the mass of the stepped-type shaft differs from the mass of the calculated uniform-diameter shaft no more than by 40%. Inclusion of this additional mass in the estimation calculation makes it possible to improve the calculation accuracy. The region of the dimensionless rotor design parameters at which the relative difference of frequency in the evaluative and verification calculations is not higher than 5 % is determined.

  16. Synthesis of single crystal manganese oxide octahedral molecular sieve (OMS) nanostructures with tunable tunnels and shapes.

    Science.gov (United States)

    Li, Wei-Na; Yuan, Jikang; Gomez-Mower, Sinue; Sithambaram, Shantakumar; Suib, Steven L

    2006-02-23

    A new and facile route is reported to manipulate the self-assembly synthesis of hierarchically ordered Rb-OMS-2 and pyrolusite with an interesting flowerlike morphology by a direct and mild reaction between rubidium chromateand manganese sulfate without any organic templates. The crystal forms, morphologies, and tunnel sizes of the obtained OMS materials can be controlled. A mechanism for the growth of manganese dioxides with flowerlike architectures was proposed. The obtained products exhibit potential for use in catalysis and other applications.

  17. Detecting stray microwaves and nonequilibrium quasiparticles in thin films by single-electron tunneling

    Science.gov (United States)

    Saira, Olli-Pentti; Maisi, Ville; Kemppinen, Antti; Möttönen, Mikko; Pekola, Jukka

    2013-03-01

    Superconducting thin films and tunnel junctions are the building blocks of many state-of-the-art technologies related to quantum information processing, microwave detection, and electronic amplification. These devices operate at millikelvin temperatures, and - in a naive picture - their fidelity metrics are expected to improve as the temperature is lowered. However, very often one finds in the experiment that the device performance levels off around 100-150 mK. In my presentation, I will address three common physical mechanisms that can cause such saturation: stray microwaves, nonequilibrium quasiparticles, and sub-gap quasiparticle states. The new experimental data I will present is based on a series of studies on quasiparticle transport in Coulomb-blockaded normal-insulator-superconductor tunnel junction devices. We have used a capacitively coupled SET electrometer to detect individual quasiparticle tunneling events in real time. We demonstrate the following record-low values for thin film aluminum: quasiparticle density nqp < 0 . 033 / μm3 , normalized density of sub-gap quasiparticle states (Dynes parameter) γ < 1 . 6 ×10-7 . I will also discuss some sample stage and chip designs that improve microwave shielding.

  18. Effect of the wire geometry and an externally applied magnetic field on the detection efficiency of superconducting nanowire single-photon detectors

    Energy Technology Data Exchange (ETDEWEB)

    Lusche, Robert; Semenov, Alexey; Huebers, Heinz-Willhelm [DLR, Institut fuer Planetenforschung, Berlin (Germany); Ilin, Konstantin; Siegel, Michael [Karlsruher Institut fuer Technologie (Germany); Korneeva, Yuliya; Trifonov, Andrey; Korneev, Alexander; Goltsman, Gregory [Moscow State Pedagogical University (Russian Federation)

    2013-07-01

    The interest in single-photon detectors in the near-infrared wavelength regime for applications, e.g. in quantum cryptography has immensely increased in the last years. Superconducting nanowire single-photon detectors (SNSPD) already show quite reasonable detection efficiencies in the NIR which can even be further improved. Novel theoretical approaches including vortex-assisted photon counting state that the detection efficiency in the long wavelength region can be enhanced by the detector geometry and an applied magnetic field. We present spectral measurements in the wavelength range from 350-2500 nm of the detection efficiency of meander-type TaN and NbN SNSPD with varying nanowire line width from 80 to 250 nm. Due to the used experimental setup we can accurately normalize the measured spectra and are able to extract the intrinsic detection efficiency (IDE) of our detectors. The results clearly indicate an improvement of the IDE depending on the wire width according to the theoretic models. Furthermore we experimentally found that the smallest detectable photon-flux can be increased by applying a small magnetic field to the detectors.

  19. Asymmetric contacts on a single SnO₂ nanowire device: an investigation using an equivalent circuit model.

    Science.gov (United States)

    Huh, Junghwan; Na, Junhong; Ha, Jeong Sook; Kim, Sangtae; Kim, Gyu Tae

    2011-08-01

    Electrical contacts between the nanomaterial and metal electrodes are of crucial importance both from fundamental and practical points of view. We have systematically compared the influence of contact properties by dc and EIS (Electrochemical impedance spectroscopy) techniques at various temperatures and environmental atmospheres (N(2) and 1% O(2)). Electrical behaviors are sensitive to the variation of Schottky barriers, while the activation energy (E(a)) depends on the donor states in the nanowire rather than on the Schottky contact. Equivalent circuits in terms of dc and EIS analyses could be modeled by Schottky diodes connected with a series resistance and parallel RC circuits, respectively. These results can facilitate the electrical analysis for evaluating the nanowire electronic devices with Schottky contacts.

  20. Properties of a GaAs Single Electron Path Switching Node Device Using a Single Quantum Dot for Hexagonal BDD Quantum Circuits

    International Nuclear Information System (INIS)

    Nakamura, Tatsuya; Abe, Yuji; Kasai, Seiya; Hasegawa, Hideki; Hashizume, Tamotsu

    2006-01-01

    A new single electron (SE) binary-decision diagram (BDD) node device having a single quantum dot connected to three nanowire branches through tunnel barriers was fabricated using etched AlGaAs/GaAs nanowires and nanometer-sized Schottky wrap gates (WPGs), and their operation was characterized experimentally, for the hexagonal BDD quantum circuit. Fabricated devices showed clear and steep single electron pass switching by applying only an input voltage signal, which was completely different from switching properties in the previous SE BDD node devices composed of two single electron switches. As the possible switching mechanism, the correlation between the probabilities of tunnelling thorough a single quantum dot in exit branches was discussed

  1. E1 Gap of Wurtzite InAs Single Nanowires Measured by Means of Resonant Raman Spectroscopy

    International Nuclear Information System (INIS)

    Moeller, M.; Lima, M. M. Jr. de; Cantarero, A.; Dacal, L. C. O.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.

    2011-01-01

    Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215 cm -1 reveals an E 1 gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase.

  2. E1 Gap of Wurtzite InAs Single Nanowires Measured by Means of Resonant Raman Spectroscopy

    Science.gov (United States)

    Möller, M.; Dacal, L. C. O.; de Lima, M. M.; Iikawa, F.; Chiaramonte, T.; Cotta, M. A.; Cantarero, A.

    2011-12-01

    Indium arsenide nanowires were synthesized with an intermixing of wurtzite and zincblende structure by chemical beam epitaxy with the vapor-liquid-solid mechanism. Resonant Raman spectroscopy of the transverse optical phonon mode at 215 cm-1 reveals an E1 gap of 2.47 eV which is assigned to the electronic band gap at the A point in the indium arsenide wurtzite phase.

  3. Hyperfine-Interaction-Driven Suppression of Quantum Tunneling at Zero Field in a Holmium(III) Single-Ion Magnet.

    Science.gov (United States)

    Chen, Yan-Cong; Liu, Jun-Liang; Wernsdorfer, Wolfgang; Liu, Dan; Chibotaru, Liviu F; Chen, Xiao-Ming; Tong, Ming-Liang

    2017-04-24

    An extremely rare non-Kramers holmium(III) single-ion magnet (SIM) is reported to be stabilized in the pentagonal-bipyramidal geometry by a phosphine oxide with a high energy barrier of 237(4) cm -1 . The suppression of the quantum tunneling of magnetization (QTM) at zero field and the hyperfine structures originating from field-induced QTMs can be observed even from the field-dependent alternating-current magnetic susceptibility in addition to single-crystal hysteresis loops. These dramatic dynamics were attributed to the combination of the favorable crystal-field environment and the hyperfine interactions arising from 165 Ho (I=7/2) with a natural abundance of 100 %. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Hyperfine-interaction-driven suppression of quantum tunneling at zero field in a holmium(III) single-ion magnet

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yan-Cong; Liu, Jun-Liang; Chen, Xiao-Ming; Tong, Ming-Liang [Key Lab. of Bioinorganic and Synthetic Chemistry of Ministry of Education, School of Chemistry, Sun Yat-Sen Univ., Guangzhou (China); Wernsdorfer, Wolfgang [Institut Neel, CNRS and Universite Joseph Fournier, Grenoble (France); Institute of Nanotechnology, Karlsruhe Institute of Technology (Germany); Physikalisches Institut, Karlsruhe Institute of Technology (Germany); Liu, Dan; Chibotaru, Liviu F. [Theory of Nanomaterials Group and INPAC-Institute of Nanoscale Physics and Chemistry, Katholieke Universiteit Leuven (Belgium)

    2017-04-24

    An extremely rare non-Kramers holmium(III) single-ion magnet (SIM) is reported to be stabilized in the pentagonal-bipyramidal geometry by a phosphine oxide with a high energy barrier of 237(4) cm{sup -1}. The suppression of the quantum tunneling of magnetization (QTM) at zero field and the hyperfine structures originating from field-induced QTMs can be observed even from the field-dependent alternating-current magnetic susceptibility in addition to single-crystal hysteresis loops. These dramatic dynamics were attributed to the combination of the favorable crystal-field environment and the hyperfine interactions arising from {sup 165}Ho (I=7/2) with a natural abundance of 100 %. (copyright 2017 Wiley-VCH Verlag GmbH and Co. KGaA, Weinheim)

  5. Consequences of Spin-Orbit Coupling at the Single Hole Level: Spin-Flip Tunneling and the Anisotropic g Factor.

    Science.gov (United States)

    Bogan, A; Studenikin, S A; Korkusinski, M; Aers, G C; Gaudreau, L; Zawadzki, P; Sachrajda, A S; Tracy, L A; Reno, J L; Hargett, T W

    2017-04-21

    Hole transport experiments were performed on a gated double quantum dot device defined in a p-GaAs/AlGaAs heterostructure with a single hole occupancy in each dot. The charging diagram of the device was mapped out using charge detection confirming that the single hole limit is reached. In that limit, a detailed study of the two-hole spin system was performed using high bias magnetotransport spectroscopy. In contrast to electron systems, the hole spin was found not to be conserved during interdot resonant tunneling. This allows one to fully map out the two-hole energy spectrum as a function of the magnitude and the direction of the external magnetic field. The heavy-hole g factor was extracted and shown to be strongly anisotropic, with a value of 1.45 for a perpendicular field and close to zero for an in-plane field as required for hybridizing schemes between spin and photonic quantum platforms.

  6. Single-molecule conductance of redox molecules in electrochemical scanning tunneling microscopy

    DEFF Research Database (Denmark)

    Haiss, W.; Albrecht, Tim; van Zalinge, H.

    2007-01-01

    of a maximum in the I-tunneling versus electrode potential relationship can be fitted by a "soft" gating concept. This arises from large configurational fluctuations of the molecular bridge linked to the gold contacts by flexible chains. This view is incorporated in a formalism that is well-suited for data...... analysis and reproduces in all important respects the 6V6 data for physically sound values of the appropriate parameters. This study demonstrates that fluctuations of isolated configurationally "soft" molecules can dominate charge transport patterns and that theoretical frameworks for compact monolayers...

  7. Comparing flows to a tunnel for single porosity, double porosity and discrete fracture representations of the EDZ

    International Nuclear Information System (INIS)

    Hawkins, I.; Swift, B.; Hoch, A.; Wendling, J.

    2010-01-01

    Document available in extended abstract form only. Andra is studying the Callovo-Oxfordian mud-stones, located at a depth of approximately 500 m beneath the borders of the Meuse and the Haute-Marne Departements, in order to assess the feasibility of constructing a repository for radioactive waste in this low-permeability geological formation. The construction of a repository will lead to the formation of a zone adjacent to the repository (the Excavation Damaged Zone, or EDZ) in which the rock suffers mechanical damage. In the EDZ, fractures and cracks will develop, and therefore the hydraulic properties (including the permeability) will be different from those of the undamaged rock. There are some experimental data which, despite significant uncertainties, allow a conceptual model of the fractures to be defined. The objectives of this study were: - To develop a Discrete Fracture Network (DFN) model of the EDZ; - To derive effective properties for both single continuum and Multiple Interacting Continua (MINC) models from the DFN model; and - To use the various models to simulate desaturation of the rock during the operational phase of the repository, and subsequent re-saturation of a tunnel post-closure (a period of thousands of years). The approaches to modelling flow and transport in fractured systems fall into two rough classes: DFN models; and continuum models. DFN models account explicitly for the effects of individual fractures on fluid flow and solute transport, and usually do not consider the interaction between the fractures and the rock matrix. Continuum models may be single continuum, double continuum or MINC. Single continuum models are applicable when the interaction between the fractures and the rock matrix is sufficient to establish a local equilibrium. Double continuum models account for the two interacting systems (i.e. fractures and rock matrix) by conceptualising each as a continuum occupying the entire domain. An exchange function describes mass

  8. Scanning tunneling microscopy on iron-chalcogenide superconductor Fe(Se, Te) single crystal

    International Nuclear Information System (INIS)

    Ukita, R.; Sugimoto, A.; Ekino, T.

    2011-01-01

    We show scanning tunneling microscopy/spectroscopy (STM/STS) results of Fe(Se, Te). STM topography shows square arrangements of spots with the lattice spacing 0.37 nm. Te and Se atoms are randomly distributed in the STM topography. The STM topography of FeTe exhibits clusters of separated iron atoms. We have investigated the iron-chalcogenide superconductor Fe(Se, Te) using a low-temperature scanning tunneling microscopy/spectroscopy (STM/STS) technique. STM topography at 4.9 K shows clear regular square arrangements of spots with the lattice spacing ∼0.37 nm, from which what we observe are attributed to Se or Te atomic plane. In the topography, brighter and darker atomic spots are randomly distributed, which are most probably due to Te and Se atoms, respectively. For the FeTe compound, the topography exhibits clusters of the bright spots probably arising from separated iron atoms distributing over several Te lattice sites. The STS measurements clarify the existence of the large-size gap with 2Δ = 0.4-0.6 eV.

  9. Comparison of Magnetization Tunneling in the Giant-Spin and Multi-Spin Descriptions of Single-Molecule Magnets

    Science.gov (United States)

    Liu, Junjie; Del Barco, Enrique; Hill, Stephen

    2010-03-01

    We perform a mapping of the spectrum obtained for a triangular Mn3 single-molecule magnet (SMM) with idealized C3 symmetry via exact diagonalization of a multi-spin (MS) Hamiltonian onto that of a giant-spin (GS) model which assumes strong ferromagnetic coupling and a spin S = 6 ground state. Magnetic hysteresis measurements on this Mn3 SMM reveal clear evidence that the steps in magnetization due to magnetization tunneling obey the expected quantum mechanical selection rules [J. Henderson et al., Phys. Rev. Lett. 103, 017202 (2009)]. High-frequency EPR and magnetization data are first fit to the MS model. The tunnel splittings obtained via the two models are then compared in order to find a relationship between the sixth order transverse anisotropy term B6^6 in GS model and the exchange constant J coupling the Mn^III ions in the MS model. We also find that the fourth order transverse term B4^3 in the GS model is related to the orientation of JahnTeller axes of Mn^III ions, as well as J

  10. Nanowire Lasers

    Directory of Open Access Journals (Sweden)

    Couteau C.

    2015-05-01

    Full Text Available We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs, solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, andwavelength tunability.Next,we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers inmany applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

  11. Quantum tunneling in real space: Tautomerization of single porphycene molecules on the (111) surface of Cu, Ag, and Au

    Science.gov (United States)

    Kumagai, Takashi; Ladenthin, Janina N.; Litman, Yair; Rossi, Mariana; Grill, Leonhard; Gawinkowski, Sylwester; Waluk, Jacek; Persson, Mats

    2018-03-01

    Tautomerization in single porphycene molecules is investigated on Cu(111), Ag(111), and Au(111) surfaces by a combination of low-temperature scanning tunneling microscopy (STM) experiments and density functional theory (DFT) calculations. It is revealed that the trans configuration is the thermodynamically stable form of porphycene on Cu(111) and Ag(111), whereas the cis configuration occurs as a meta-stable form. The trans → cis or cis → trans conversion on Cu(111) can be induced in an unidirectional fashion by injecting tunneling electrons from the STM tip or heating the surface, respectively. We find that the cis ↔ cis tautomerization on Cu(111) occurs spontaneously via tunneling, verified by the negligible temperature dependence of the tautomerization rate below ˜23 K. Van der Waals corrected DFT calculations are used to characterize the adsorption structures of porphycene and to map the potential energy surface of the tautomerization on Cu(111). The calculated barriers are too high to be thermally overcome at cryogenic temperatures used in the experiment and zero-point energy corrections do not change this picture, leaving tunneling as the most likely mechanism. On Ag(111), the reversible trans ↔ cis conversion occurs spontaneously at 5 K and the cis ↔ cis tautomerization rate is much higher than on Cu(111), indicating a significantly smaller tautomerization barrier on Ag(111) due to the weaker interaction between porphycene and the surface compared to Cu(111). Additionally, the STM experiments and DFT calculations reveal that tautomerization on Cu(111) and Ag(111) occurs with migration of porphycene along the surface; thus, the translational motion couples with the tautomerization coordinate. On the other hand, the trans and cis configurations are not discernible in the STM image and no tautomerization is observed for porphycene on Au(111). The weak interaction of porphycene with Au(111) is closest to the gas-phase limit and therefore the absence

  12. Magnetic and transport properties of single and double perpendicular magnetic tunnel junctions

    International Nuclear Information System (INIS)

    Cuchet, Lea

    2015-01-01

    Due to their advantageous properties in terms of data retention, storage density and critical current density for Spin Transfer Torque (STT) switching, the magnetic tunnel junctions with perpendicular anisotropy have become predominant in the developments for MRAM applications. The aim of this thesis is to improve the anisotropy and transport properties of such structures and to realize even more complex stacks such as perpendicular double junctions. Studies on the magnetic properties and Tunnel Magnetoresistance (TMR) measurements showed that to optimize the performances of the junctions, all the thicknesses of the different layers constituting the stack have to be adapted. To guaranty both a large TMR as well a strong perpendicular anisotropy, compromises are most of the time needed. Studies as a function of magnetic thickness enabled to extract the saturation magnetization, the critical thickness and the magnetic dead layer thickness both in the bottom reference and the top storage layer in structures capped with Ta. This type of junction could be tested electrically after patterning the sample into nano-pillars. Knowing that perpendicular anisotropy mostly arises at the metal/oxide interface, the Ta capping layer was replaced by a MgO one, leading to a huge increase in the anisotropy of the free layer. A second top reference was then added on such a stack to create functional perpendicular double junctions. CoFeB/insertion/CoFeB synthetic antiferromagnetic storage layers could be developed and were proved to be stable enough to replace the standard Co/Pt-based reference layers. (author) [fr

  13. Controlled assembly and single electron charging of monolayer protected Au144 clusters: an electrochemistry and scanning tunneling spectroscopy study

    Science.gov (United States)

    Bodappa, Nataraju; Fluch, Ulrike; Fu, Yongchun; Mayor, Marcel; Moreno-García, Pavel; Siegenthaler, Hans; Wandlowski, Thomas

    2014-11-01

    Single gold particles may serve as room temperature single electron memory units because of their size dependent electronic level spacing. Here, we present a proof-of-concept study by electrochemically controlled scanning probe experiments performed on tailor-made Au particles of narrow dispersity. In particular, the charge transport characteristics through chemically synthesized hexane-1-thiol and 4-pyridylbenzene-1-thiol mixed monolayer protected Au144 clusters (MPCs) by differential pulse voltammetry (DPV) and electrochemical scanning tunneling spectroscopy (EC-STS) are reported. The pyridyl groups exposed by the Au-MPCs enable their immobilization on Pt(111) substrates. By varying the humidity during their deposition, samples coated by stacks of compact monolayers of Au-MPCs or decorated with individual, laterally separated Au-MPCs are obtained. DPV experiments with stacked monolayers of Au144-MPCs and EC-STS experiments with laterally separated individual Au144-MPCs are performed both in aqueous and ionic liquid electrolytes. Lower capacitance values were observed for individual clusters compared to ensemble clusters. This trend remains the same irrespective of the composition of the electrolyte surrounding the Au144-MPC. However, the resolution of the energy level spacing of the single clusters is strongly affected by the proximity of neighboring particles.Single gold particles may serve as room temperature single electron memory units because of their size dependent electronic level spacing. Here, we present a proof-of-concept study by electrochemically controlled scanning probe experiments performed on tailor-made Au particles of narrow dispersity. In particular, the charge transport characteristics through chemically synthesized hexane-1-thiol and 4-pyridylbenzene-1-thiol mixed monolayer protected Au144 clusters (MPCs) by differential pulse voltammetry (DPV) and electrochemical scanning tunneling spectroscopy (EC-STS) are reported. The pyridyl groups

  14. Measurement and statistical analysis of single-molecule current-voltage characteristics, transition voltage spectroscopy, and tunneling barrier height.

    Science.gov (United States)

    Guo, Shaoyin; Hihath, Joshua; Díez-Pérez, Ismael; Tao, Nongjian

    2011-11-30

    We report on the measurement and statistical study of thousands of current-voltage characteristics and transition voltage spectra (TVS) of single-molecule junctions with different contact geometries that are rapidly acquired using a new break junction method at room temperature. This capability allows one to obtain current-voltage, conductance voltage, and transition voltage histograms, thus adding a new dimension to the previous conductance histogram analysis at a fixed low-bias voltage for single molecules. This method confirms the low-bias conductance values of alkanedithiols and biphenyldithiol reported in literature. However, at high biases the current shows large nonlinearity and asymmetry, and TVS allows for the determination of a critically important parameter, the tunneling barrier height or energy level alignment between the molecule and the electrodes of single-molecule junctions. The energy level alignment is found to depend on the molecule and also on the contact geometry, revealing the role of contact geometry in both the contact resistance and energy level alignment of a molecular junction. Detailed statistical analysis further reveals that, despite the dependence of the energy level alignment on contact geometry, the variation in single-molecule conductance is primarily due to contact resistance rather than variations in the energy level alignment.

  15. Single molecule manipulation at low temperature and laser scanning tunnelling photo-induced processes analysis through time-resolved studies

    International Nuclear Information System (INIS)

    Riedel, Damien

    2010-01-01

    This paper describes, firstly, the statistical analysis used to determine the processes that occur during the manipulation of a single molecule through electronically induced excitations with a low temperature (5 K) scanning tunnelling microscope (STM). Various molecular operation examples are described and the ability to probe the ensuing molecular manipulation dynamics is discussed within the excitation context. It is, in particular, shown that such studies can reveal reversible manipulation for tuning dynamics through variation of the excitation energy. Secondly, the photo-induced process arising from the irradiation of the STM junction is also studied through feedback loop dynamics analysis, allowing us to distinguish between photo-thermally and photo-electronically induced signals.

  16. A superconducting nanowire can be modeled by using SPICE

    Science.gov (United States)

    Berggren, Karl K.; Zhao, Qing-Yuan; Abebe, Nathnael; Chen, Minjie; Ravindran, Prasana; McCaughan, Adam; Bardin, Joseph C.

    2018-05-01

    Modeling of superconducting nanowire single-photon detectors typically requires custom simulations or finite-element analysis in one or two dimensions. Here, we demonstrate two simplified one-dimensional SPICE models of a superconducting nanowire that can quickly and efficiently describe the electrical characteristics of a superconducting nanowire. These models may be of particular use in understanding alternative architectures for nanowire detectors and readouts.

  17. Diluted magnetic semiconductor nanowires exhibiting magnetoresistance

    Science.gov (United States)

    Yang, Peidong [El Cerrito, CA; Choi, Heonjin [Seoul, KR; Lee, Sangkwon [Daejeon, KR; He, Rongrui [Albany, CA; Zhang, Yanfeng [El Cerrito, CA; Kuykendal, Tevye [Berkeley, CA; Pauzauskie, Peter [Berkeley, CA

    2011-08-23

    A method for is disclosed for fabricating diluted magnetic semiconductor (DMS) nanowires by providing a catalyst-coated substrate and subjecting at least a portion of the substrate to a semiconductor, and dopant via chloride-based vapor transport to synthesize the nanowires. Using this novel chloride-based chemical vapor transport process, single crystalline diluted magnetic semiconductor nanowires Ga.sub.1-xMn.sub.xN (x=0.07) were synthesized. The nanowires, which have diameters of .about.10 nm to 100 nm and lengths of up to tens of micrometers, show ferromagnetism with Curie temperature above room temperature, and magnetoresistance up to 250 Kelvin.

  18. Superconducting nanowire single photon detectors fabricated from an amorphous Mo{sub 0.75}Ge{sub 0.25} thin film

    Energy Technology Data Exchange (ETDEWEB)

    Verma, V. B.; Lita, A. E.; Vissers, M. R.; Marsili, F.; Pappas, D. P.; Mirin, R. P.; Nam, S. W. [National Institute of Standards and Technology, 325 Broadway, Boulder, Colorado 80305 (United States)

    2014-07-14

    We present the characteristics of superconducting nanowire single photon detectors (SNSPDs) fabricated from amorphous Mo{sub 0.75}Ge{sub 0.25} thin-films. Fabricated devices show a saturation of the internal detection efficiency at temperatures below 1 K, with system dark count rates below 500 cps. Operation in a closed-cycle cryocooler at 2.5 K is possible with system detection efficiencies exceeding 20% for SNSPDs which have not been optimized for high detection efficiency. Jitter is observed to vary between 69 ps at 250 mK and 187 ps at 2.5 K using room temperature amplifiers.

  19. Conversion from temporary to tunneled catheters by nephrologists: report of a single-center experience

    Directory of Open Access Journals (Sweden)

    Silva BC

    2016-04-01

    Full Text Available Bruno C Silva, Camila E Rodrigues, Regina CRM Abdulkader, Rosilene M Elias Nephrology Division, Hospital das Clínicas, University of São Paulo, São Paulo, Brazil Background: Nephrologists have increasingly participated in the conversion from temporary catheters (TC to tunneled-cuffed catheters (TCCs for hemodialysis. Objective: To prospectively analyze the outcomes associated with TCC placement by nephrologists with expertise in such procedure, in different time periods at the same center. The impact of vancomycin or cefazolin as prophylactic antibiotics on the infection outcomes was also tested. Patients and methods: Hemodialysis patients who presented to such procedure were divided into two cohorts: A (from 2004 to 2008 and B (from 2013 to 2015. Time from TC to TCC conversion, prophylactic antibiotics, and reasons for TCC removal were evaluated. Results: One hundred and thirty patients were included in cohort A and 228 in cohort B. Sex, age, and follow-up time were similar between cohorts. Median time from TC to TCC conversion was longer in cohort A than in cohort B (14 [3; 30] vs 4 [1; 8] days, respectively; P<0.0001. Infection leading to catheter removal occurred in 26.4% vs 18.9% of procedures in cohorts A and B, respectively, and infection rate was 0.93 vs 0.73 infections per 1,000 catheter-days, respectively (P=0.092. Infection within 30 days from the procedure occurred in 1.4% of overall cohort. No differences were observed when comparing vancomycin and cefazolin as prophylactic antibiotics on 90-day infection-free TCC survival in a Kaplan–Meier model (log-rank = 0.188. TCC removal for low blood flow occurred in 8.9% of procedures. Conclusion: Conversion of TC to TCC by nephrologists had overall infection, catheter patency, and complications similar to data reported in the literature. Vancomycin was not superior to cefazolin as a prophylactic antibiotic. Keywords: renal dialysis, tunneled catheters, interventional nephrology

  20. Carbon nanotubes as electromechanical resonators : Single-electron tunneling, nonlinearity, and high-bandwidth readout

    NARCIS (Netherlands)

    Meerwaldt, H.B.

    2013-01-01

    A carbon nanotube (CNT) is a remarkable material and can be thought of as a single-atom thick cylinder of carbon atoms capped of with a semisphere. This is called a single-walled CNT and, depending on how the cylinder is rolled up, CNTs are either semiconducting or metallic. A CNT is made into a

  1. Crystalline Symmetry-Protected Majorana Mode in Number-Conserving Dirac Semimetal Nanowires

    Science.gov (United States)

    Zhang, Rui-Xing; Liu, Chao-Xing

    2018-04-01

    One of the cornerstones for topological quantum computations is the Majorana zero mode, which has been intensively searched in fractional quantum Hall systems and topological superconductors. Several recent works suggest that such an exotic mode can also exist in a one-dimensional (1D) interacting double-wire setup even without long-range superconductivity. A notable instability in these proposals comes from interchannel single-particle tunneling that spoils the topological ground state degeneracy. Here we show that a 1D Dirac semimetal (DSM) nanowire is an ideal number-conserving platform to realize such Majorana physics. By inserting magnetic flux, a DSM nanowire is driven into a 1D crystalline-symmetry-protected semimetallic phase. Interaction enables the emergence of boundary Majorana zero modes, which is robust as a result of crystalline symmetry protection. We also explore several experimental consequences of Majorana signals.

  2. Development of CdTe/Cd{sub 1-x}Mg{sub x}Te double barrier, single quantum well heterostructure for resonant tunneling

    Energy Technology Data Exchange (ETDEWEB)

    Reuscher, G.; Keim, M.; Fischer, F.; Waag, A.; Landwehr, G. [Physikalishes Institut der Universitaet Wuerzburg am Hubland, Wuerzburg (Germany)

    1995-12-31

    We report the first observation of resonant tunneling through a CdTe/Cd{sub 1-x}Mg{sub x}Te double barrier, single quantum well heterostructure. Negative differential resistance is observable at temperatures below 230 K, exhibiting a peak to valley ratio of 3:1 at 4.2 K. (author). 16 refs, 2 figs.

  3. Silicon nanowire transistors

    CERN Document Server

    Bindal, Ahmet

    2016-01-01

    This book describes the n and p-channel Silicon Nanowire Transistor (SNT) designs with single and dual-work functions, emphasizing low static and dynamic power consumption. The authors describe a process flow for fabrication and generate SPICE models for building various digital and analog circuits. These include an SRAM, a baseband spread spectrum transmitter, a neuron cell and a Field Programmable Gate Array (FPGA) platform in the digital domain, as well as high bandwidth single-stage and operational amplifiers, RF communication circuits in the analog domain, in order to show this technology’s true potential for the next generation VLSI. Describes Silicon Nanowire (SNW) Transistors, as vertically constructed MOS n and p-channel transistors, with low static and dynamic power consumption and small layout footprint; Targets System-on-Chip (SoC) design, supporting very high transistor count (ULSI), minimal power consumption requiring inexpensive substrates for packaging; Enables fabrication of different types...

  4. Title: Using Alignment and 2D Network Simulations to Study Charge Transport Through Doped ZnO Nanowire Thin Film Electrodes

    KAUST Repository

    Phadke, Sujay; Lee, Jung-Yong; West, Jack; Peumans, Peter; Salleo, Alberto

    2011-01-01

    of magnitude lower than the single nanowire resistance. Simulations suggest that the conductivity of such thin film devices could be further enhanced by using longer nanowires. Solution processed Gallium doped ZnO nanowires are aligned on substrates using

  5. Magnetic field manipulation of spin current in a single-molecule magnet tunnel junction with two-electron Coulomb interaction

    Science.gov (United States)

    Zhang, Chao; Yao, Hui; Nie, Yi-Hang; Liang, Jiu-Qing; Niu, Peng-Bin

    2018-04-01

    In this work, we study the generation of spin-current in a single-molecule magnet (SMM) tunnel junction with Coulomb interaction of transport electrons and external magnetic field. In the absence of field the spin-up and -down currents are symmetric with respect to the initial polarizations of molecule. The existence of magnetic field breaks the time-reversal symmetry, which leads to unsymmetrical spin currents of parallel and antiparallel polarizations. Both the amplitude and polarization direction of spin current can be controlled by the applied magnetic field. Particularly when the magnetic field increases to a certain value the spin-current with antiparallel polarization is reversed along with the magnetization reversal of the SMM. The two-electron occupation indeed enhances the transport current compared with the single-electron process. However the increase of Coulomb interaction results in the suppression of spin-current amplitude at the electron-hole symmetry point. We propose a scheme to compensate the suppression with the magnetic field.

  6. Anatomic single-bundle ACL surgery: consequences of tibial tunnel diameter and drill-guide angle on tibial footprint coverage.

    Science.gov (United States)

    Van der Bracht, H; Verhelst, L; Stuyts, B; Page, B; Bellemans, J; Verdonk, P

    2014-05-01

    To investigate the consequences of differences in drill-guide angle and tibial tunnel diameter on the amount of tibial anatomical anterior cruciate ligament (ACL) footprint coverage and the risk of overhang of the tibial tunnel aperture over the edges of the native tibial ACL footprint. Twenty fresh-frozen adult human knee specimens with a median age of 46 years were used for this study. Digital templates mimicking the ellipsoid aperture of tibial tunnels with a different drill-guide angle and a different diameter were designed. The centres of these templates were positioned over the geometric centre of the tibial ACL footprint. The amount of tibial ACL footprint coverage and overhang was calculated. Risk factors for overhang were determined. Footprint coverage and the risk of overhang were also compared between a lateral tibial tunnel and a classic antero-medial tibial tunnel. A larger tibial tunnel diameter and a smaller drill-guide angle both will create significant more footprint coverage and overhang. In 45% of the knees, an overhang was created with a 10-mm diameter tibial tunnel with drill-guide angle 45°. Furthermore, a lateral tibial tunnel was found not to be at increased risk of overhang. A larger tibial tunnel diameter and a smaller drill-guide angle both will increase the amount of footprint coverage. Inversely, larger tibial tunnel diameters and smaller drill-guide angles will increase the risk of overhang of the tibial tunnel aperture over the edges of the native tibial ACL footprint. A lateral tibial tunnel does not increase the risk of overhang.

  7. Far field photoluminescence imaging of single AlGaN nanowire in the sub-wavelength scale using confinement of polarized light

    Energy Technology Data Exchange (ETDEWEB)

    Sivadasan, A.K.; Dhara, Sandip [Nanomaterials and Sensors Section, Surface and Nanoscience Division, Indira Gandhi Centre for Atomic Research, Homi Bhabha National Institute, Kalpakkam (India); Sardar, Manas [Theoretical Studies Section, Materials Physics Division, Indira Gandhi Centre for Atomic Research, Kalpakkam (India)

    2017-03-15

    Till now the nanoscale focusing and imaging in the sub-diffraction limit is achieved mainly with the help of plasmonic field enhancement by confining the light assisted with noble metal nanostructures. Using far field imaging technique, we have recorded polarized spectroscopic photoluminescence (PL) imaging of a single AlGaN nanowire (NW) of diameter ∝100 nm using confinement of polarized light. It is found that the PL from a single NW is influenced by the proximity to other NWs. The PL intensity is proportional to 1/(l x d), where l and d are the average NW length and separation between the NWs, respectively. We suggest that the proximity induced PL intensity enhancement can be understood by assuming the existence of reasonably long lived photons in the intervening space between the NWs. A nonzero non-equilibrium population of such photons may cause stimulated emission leading to the enhancement of PL emission with the intensity proportional to 1/(l x d). The enhancement of PL emission facilitates far field spectroscopic imaging of a single semiconductor AlGaN NW of sub-wavelength dimension. (copyright 2016 by WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  8. A sub k{sub B}T/q semimetal nanowire field effect transistor

    Energy Technology Data Exchange (ETDEWEB)

    Ansari, L.; Fagas, G.; Gity, F.; Greer, J. C., E-mail: Jim.Greer@Tyndall.ie [Tyndall National Institute, Lee Maltings, Dyke Parade, Cork T12 R5CP (Ireland)

    2016-08-08

    The key challenge for nanoelectronics technologies is to identify the designs that work on molecular length scales, provide reduced power consumption relative to classical field effect transistors (FETs), and that can be readily integrated at low cost. To this end, a FET is introduced that relies on the quantum effects arising for semimetals patterned with critical dimensions below 5 nm, that intrinsically has lower power requirements due to its better than a “Boltzmann tyranny” limited subthreshold swing (SS) relative to classical field effect devices, eliminates the need to form heterojunctions, and mitigates against the requirement for abrupt doping profiles in the formation of nanowire tunnel FETs. This is achieved through using a nanowire comprised of a single semimetal material while providing the equivalent of a heterojunction structure based on shape engineering to avail of the quantum confinement induced semimetal-to-semiconductor transition. Ab initio calculations combined with a non-equilibrium Green's function formalism for charge transport reveals tunneling behavior in the OFF state and a resonant conduction mechanism for the ON state. A common limitation to tunnel FET (TFET) designs is related to a low current in the ON state. A discussion relating to the semimetal FET design to overcome this limitation while providing less than 60 meV/dec SS at room temperature is provided.

  9. Optical properties of indium phosphide nanowire ensembles at various temperatures

    Energy Technology Data Exchange (ETDEWEB)

    Lohn, Andrew J; Onishi, Takehiro; Kobayashi, Nobuhiko P [Baskin School of Engineering, University of California Santa Cruz, Santa Cruz, CA 95064 (United States); Nanostructured Energy Conversion Technology and Research (NECTAR), Advanced Studies Laboratories, University of California Santa Cruz-NASA Ames Research Center, Moffett Field, CA 94035 (United States)

    2010-09-03

    Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified. In contrast, the photoluminescence emissions associated with wurtzite nanowires were rather insensitive to temperature. Raman spectra were collected simultaneously from zincblende and wurtzite nanowires coexisting in an ensemble. Raman peaks of the wurtzite nanowires are interpreted as those related to the zincblende nanowires by a folding of the phonon dispersion.

  10. Optical properties of indium phosphide nanowire ensembles at various temperatures

    International Nuclear Information System (INIS)

    Lohn, Andrew J; Onishi, Takehiro; Kobayashi, Nobuhiko P

    2010-01-01

    Ensembles that contain two types (zincblende and wurtzite) of indium phosphide nanowires grown on non-single crystalline surfaces were studied by micro-photoluminescence and micro-Raman spectroscopy at various low temperatures. The obtained spectra are discussed with the emphasis on the effects of differing lattice types, geometries, and crystallographic orientations present within an ensemble of nanowires grown on non-single crystalline surfaces. In the photoluminescence spectra, a typical Varshni dependence of band gap energy on temperature was observed for emissions from zincblende nanowires and in the high temperature regime energy transfer from excitonic transitions and band-edge transitions was identified. In contrast, the photoluminescence emissions associated with wurtzite nanowires were rather insensitive to temperature. Raman spectra were collected simultaneously from zincblende and wurtzite nanowires coexisting in an ensemble. Raman peaks of the wurtzite nanowires are interpreted as those related to the zincblende nanowires by a folding of the phonon dispersion.

  11. Low Leakage Superconducting Tunnel Junctions with a Single Crystal Al2O3 Barrier

    Science.gov (United States)

    2016-03-30

    10-6 Torr ). In this low-pressure oxygen environment, Auger electron spectroscopy (AES) study shows that while oxidation of the base layer is...three layers were grown in situ in an ultra high vacuum (UHV) system with a nominal base pressure of ~1×10-10 Torr . First, a 120~150 nm thick...high-temperature annealing in order to crystallize the amorphous AlOx into a single-crystal Al2O3. After the sample was cooled to room temperature

  12. DFT calculations of the charged states of N@C60 and Fe4 single molecule magnets investigated in tunneling spectroscopy

    Science.gov (United States)

    Nossa, Javier; Islam, Fhokrul; Canali, Carlo; Pederson, Mark

    2012-02-01

    For device applications of single molecule magnets (SMMs) in high-density information storage and quantum-state control it is essential that the magnetic properties of the molecules remain stable under the influence of metallic contacts or surface environment. Recent tunneling experiments [1, 2] on N@C60 and Fe4 SMM have shown that these molecules preserve their magnetic characteristics when they are used as the central island of single-electron transistors. Although quantum spin models have been used extensively to study theoretically tunneling spectroscopy of SMMs, it has been shown recently that the orbital degrees of freedom, which is absent in spin models, can significantly affect the tunneling conductance [3]. In this work we present first-principles calculations of the neutral and charged states of N@C60 and Fe4 SMMs, and discuss a strategy to include their properties into a theory of quantum transport. We also present results of the magnetic anisotropy for the different charge states of Fe4 and discuss their relevance for experiments [2] in the sequential tunneling and cotunnelling regimes. [4pt] [1]. N. Roch et al., Phys. Rev. B 83, 081407 (2011). [0pt] [2]. A.S. Zyazin et al., Nano Lett. 10, 3307 (2010). [0pt] [3]. L. Michalak et al., Phys. Rev. Lett. 104, 017202 (2010).

  13. Angle dependence on the anisotropic magnetoresistance amplitude of a single-contacted Ni nanowire subjected to a thermo-mechanical strain

    Energy Technology Data Exchange (ETDEWEB)

    Melilli, G.; Madon, B.; Wegrowe, J.-E., E-mail: jean-eric.wegrowe@polytechnique.edu; Clochard, M.-C., E-mail: clochard@cea.fr

    2015-12-15

    The effects of thermoelastic and piezoelectric strain of an active track-etched β-PVDF polymer matrix on an electrodeposited single-contacted Ni nanowire (NW) are investigated at the nanoscale by measuring the change of magnetization (i.e. using the inverse magnetostriction effect). The magnetization state is measured locally by anisotropic magnetoresistance (AMR). The ferromagnetic NW plays thus the role of a mechanical probe that allows the effects of mechanical strain to be characterized and described qualitatively and quantitatively. The inverse magnetostriction was found to be responsible for a quasi-disappearance of the AMR signal for a variation of the order of ΔT ≈ 10 K. In other terms, the variation of the magnetization due to the stress compensates the effect of external magnetic field applied on the NW resistance. The induced stress field in a single Ni NW was found 1000 time higher than the bulk stress field (due to thermal expansion measured on the PVDF). This amplification could be attributed to three nanoscopic effects: (1) a stress mismatch between the Ni NW and the membrane, (2) a non-negligible role of the surface tension on Ni NW Young modulus, and (3) the possibility of non-linear stress–strain law. We investigate here the role of these different contributions using track-etched polymer membranes irradiated at various angles (α{sub irrad}) leading to, after electrodeposition, embedded Ni NWs of different orientations.

  14. Angle dependence on the anisotropic magnetoresistance amplitude of a single-contacted Ni nanowire subjected to a thermo-mechanical strain

    Science.gov (United States)

    Melilli, G.; Madon, B.; Wegrowe, J.-E.; Clochard, M.-C.

    2015-12-01

    The effects of thermoelastic and piezoelectric strain of an active track-etched β-PVDF polymer matrix on an electrodeposited single-contacted Ni nanowire (NW) are investigated at the nanoscale by measuring the change of magnetization (i.e. using the inverse magnetostriction effect). The magnetization state is measured locally by anisotropic magnetoresistance (AMR). The ferromagnetic NW plays thus the role of a mechanical probe that allows the effects of mechanical strain to be characterized and described qualitatively and quantitatively. The inverse magnetostriction was found to be responsible for a quasi-disappearance of the AMR signal for a variation of the order of ΔT ≈ 10 K. In other terms, the variation of the magnetization due to the stress compensates the effect of external magnetic field applied on the NW resistance. The induced stress field in a single Ni NW was found 1000 time higher than the bulk stress field (due to thermal expansion measured on the PVDF). This amplification could be attributed to three nanoscopic effects: (1) a stress mismatch between the Ni NW and the membrane, (2) a non-negligible role of the surface tension on Ni NW Young modulus, and (3) the possibility of non-linear stress-strain law. We investigate here the role of these different contributions using track-etched polymer membranes irradiated at various angles (αirrad) leading to, after electrodeposition, embedded Ni NWs of different orientations.

  15. Angle dependence on the anisotropic magnetoresistance amplitude of a single-contacted Ni nanowire subjected to a thermo-mechanical strain

    International Nuclear Information System (INIS)

    Melilli, G.; Madon, B.; Wegrowe, J.-E.; Clochard, M.-C.

    2015-01-01

    The effects of thermoelastic and piezoelectric strain of an active track-etched β-PVDF polymer matrix on an electrodeposited single-contacted Ni nanowire (NW) are investigated at the nanoscale by measuring the change of magnetization (i.e. using the inverse magnetostriction effect). The magnetization state is measured locally by anisotropic magnetoresistance (AMR). The ferromagnetic NW plays thus the role of a mechanical probe that allows the effects of mechanical strain to be characterized and described qualitatively and quantitatively. The inverse magnetostriction was found to be responsible for a quasi-disappearance of the AMR signal for a variation of the order of ΔT ≈ 10 K. In other terms, the variation of the magnetization due to the stress compensates the effect of external magnetic field applied on the NW resistance. The induced stress field in a single Ni NW was found 1000 time higher than the bulk stress field (due to thermal expansion measured on the PVDF). This amplification could be attributed to three nanoscopic effects: (1) a stress mismatch between the Ni NW and the membrane, (2) a non-negligible role of the surface tension on Ni NW Young modulus, and (3) the possibility of non-linear stress–strain law. We investigate here the role of these different contributions using track-etched polymer membranes irradiated at various angles (α irrad ) leading to, after electrodeposition, embedded Ni NWs of different orientations.

  16. Gate-Tunable Spin Exchange Interactions and Inversion of Magnetoresistance in Single Ferromagnetic ZnO Nanowires.

    Science.gov (United States)

    Modepalli, Vijayakumar; Jin, Mi-Jin; Park, Jungmin; Jo, Junhyeon; Kim, Ji-Hyun; Baik, Jeong Min; Seo, Changwon; Kim, Jeongyong; Yoo, Jung-Woo

    2016-04-26

    Electrical control of ferromagnetism in semiconductor nanostructures offers the promise of nonvolatile functionality in future semiconductor spintronics. Here, we demonstrate a dramatic gate-induced change of ferromagnetism in ZnO nanowire (NW) field-effect transistors (FETs). Ferromagnetism in our ZnO NWs arose from oxygen vacancies, which constitute deep levels hosting unpaired electron spins. The magnetic transition temperature of the studied ZnO NWs was estimated to be well above room temperature. The in situ UV confocal photoluminescence (PL) study confirmed oxygen vacancy mediated ferromagnetism in the studied ZnO NW FET devices. Both the estimated carrier concentration and temperature-dependent conductivity reveal the studied ZnO NWs are at the crossover of the metal-insulator transition. In particular, gate-induced modulation of the carrier concentration in the ZnO NW FET significantly alters carrier-mediated exchange interactions, which causes even inversion of magnetoresistance (MR) from negative to positive values. Upon sweeping the gate bias from -40 to +50 V, the MRs estimated at 2 K and 2 T were changed from -11.3% to +4.1%. Detailed analysis on the gate-dependent MR behavior clearly showed enhanced spin splitting energy with increasing carrier concentration. Gate-voltage-dependent PL spectra of an individual NW device confirmed the localization of oxygen vacancy-induced spins, indicating that gate-tunable indirect exchange coupling between localized magnetic moments played an important role in the remarkable change of the MR.

  17. Quantum tunneling of magnetization in a new [Mn18]2+ single-molecule magnet with s = 13.

    Science.gov (United States)

    Brechin, Euan K; Boskovic, Colette; Wernsdorfer, Wolfgang; Yoo, Jae; Yamaguchi, Akira; Sañudo, E Carolina; Concolino, Thomas R; Rheingold, Arnold L; Ishimoto, Hidehiko; Hendrickson, David N; Christou, George

    2002-08-21

    The reaction between 2-(hydroxyethyl)pyridine (hepH) and a 2:1 molar mixture of [Mn3O(O2CMe)6(py)3](ClO4) and [Mn3O(O2CMe)6(py)3](py) in MeCN leads to isolation of [Mn18O14(O2CMe)18(hep)4(hepH)2(H2O)2](ClO4)2 (1) in 10% yield. The complex is 2MnII,16MnIII and consists of a Mn4O6 central unit to either side of which is attached a Mn7O9 unit. Magnetization data collected in the 2.0-4.0 K and 20-50 kG ranges were fit to yield S = 13, g = 1.86, and D = -0.13 cm-1 = -0.19 K, where D is the axial zero-field splitting parameter. AC susceptibility studies in the 0.04-4.0 K range at frequencies up to 996 Hz display out-of-phase (chiM' ') signals, indicative of a single-molecule magnet (SMM). Magnetization vs applied DC field scans exhibit hysteresis at SMM. DC magnetization decay data were collected on both a microcrystalline sample and a single crystal, and the combined data were used to construct an Arrhenius plot. Between 3.50 and 0.50 K, the relaxation rate is temperature-dependent with an effective barrier to relaxation (Ueff) of 14.8 cm-1 = 21.3 K. Below ca. 0.25 K, the relaxation rate is temperature-independent at 1.3 x 10-8 s-1, indicative of quantum tunneling of magnetization (QTM) between the lowest energy Ms = +/-13 levels of the S = 13 state. Complex 1 is both the largest spin and highest nuclearity SMM to exhibit QTM.

  18. PREFACE: Synthesis and integration of nanowires

    Science.gov (United States)

    Samuelson, L.

    2006-06-01

    The field of semiconductor nanowires has attracted much attention in recent years, from the areas of basic materials science, advanced characterization and technology, as well as from the perspective of the applications of nanowires. Research on large-sized whiskers and wires had already begun in the 1960s with the pioneering work of Wagner, as well as by other researchers. It was, however, in the early 1990s that Kenji Hiruma at Hitachi Central Research Laboratories in Japan first succeeded in developing methods for the growth of nanowires with dimensions on the scale of 10-100 nm, thereby initiating the field of growth and applications of nanowires, with a strong emphasis on epitaxial nucleation of nanowires on a single-crystalline substrate. Starting from the mid-1990s, the field developed very rapidly with the number of papers on the subject growing from ten per year to several thousand papers on the subject published annually today, although with a rather generous definition of the concept of nanowires. With this rapid development we have seen many new and different approaches to the growth of nanowires, technological advances leading to a more well-controlled formation of nanowires, new innovative methods for the characterization of structures, as well as a wealth of approaches towards the use of nanowires in electronics, photonics and sensor applications. This issue contains contributions from many different laboratories, each adding significant detail to the development of the field of research. The contributions cover issues such as basic growth, advanced characterization and technology, and application of nanowires. I would like to acknowledge the shared responsibilities for this special issue of Nanotechnology on the synthesis and integration of nanowires with my co-Editors, S Tong Lee and M Sunkara, as well as the highly professional support from Dr Nina Couzin, Dr Ian Forbes and the Nanotechnology team from the Institute of Physics Publishing.

  19. Rare earth silicide nanowires on silicon surfaces

    International Nuclear Information System (INIS)

    Wanke, Martina

    2008-01-01

    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti Γ point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi 2 -monolayer and the Dy 3 Si 5 -multilayer on the Si(111) surface are investigated in comparison to the known ErSi 2 /Si(111) and Er 3 Si 5 /Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the vector k parallel space is elliptical at the anti M points, while the hole pocket at the anti Γ point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas of the sample surface, which are oriented

  20. Pressure-sensitive strain sensor based on a single percolated Ag nanowire layer embedded in colorless polyimide

    Energy Technology Data Exchange (ETDEWEB)

    Lee, Chan-Jae [Display Materials & Components Research Center, Korea Electronics Technology Institute, 68 Yatap-dong, Bundang-gu, Seongnam 463-816 (Korea, Republic of); Jun, Sungwoo [Display Materials & Components Research Center, Korea Electronics Technology Institute, 68 Yatap-dong, Bundang-gu, Seongnam 463-816 (Korea, Republic of); Display and Nanosystem Laboratory, College of Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Ju, Byeong-Kwon [Display and Nanosystem Laboratory, College of Engineering, Korea University, Seoul 136-713 (Korea, Republic of); Kim, Jong-Woong, E-mail: wyjd@keti.re.kr [Display Materials & Components Research Center, Korea Electronics Technology Institute, 68 Yatap-dong, Bundang-gu, Seongnam 463-816 (Korea, Republic of)

    2017-06-01

    This paper presents the fabrication of an elastomer-free, transparent, pressure-sensitive strain sensor consisting of a specially designed silver nanowire (AgNW) pattern and colorless polyimide (cPI). A percolated AgNW network was patterned with a simple tandem compound circuit, which was then embedded in the surface of the cPI via inverted layer processing. The resulting film-type sensor was highly transparent (~93.5% transmittance at 550 nm) and mechanically stable (capable of resisting 10000 cycles of bending to a 500 µm radius of curvature). We demonstrated that a thin, transparent, and mechanically stable electrode can be produced using a combination of AgNWs and cPI, and used to produce a system sensitive to pressure-induced bending. The capacitance of the AgNW tandem compound electrode pattern grew via fringing, which increased with the pressure-induced bending applied to the surface of the sensor. The sensitivity was four times higher than that of an elastomeric pressure sensor made with the same design. Finally, we demonstrated a skin-like pressure sensor attached to the inside wrist of a human arm. - Highlights: • A thin, transparent pressure sensor was fabricated from AgNWs and cPI. • An AgNW network was patterned with a simple circuit, and then embedded into cPI. • The resulting film-type sensor was highly transparent and mechanically stable. • The sensor sensitivity was 4x higher than that of an elastomeric pressure sensor.

  1. Rotary balance data for a single-engine trainer design for an angle-of-attack range of 8 deg to 90 deg. [conducted in langely spin tunnel

    Science.gov (United States)

    Pantason, P.; Dickens, W.

    1979-01-01

    Aerodynamic characteristics obtained in a rotational flow environment utilizing a rotary balance located in the Langley spin tunnel are presented in plotted form for a 1/6 scale, single engine trainer airplane model. The configurations tested included the basic airplane, various wing leading edge devices, elevator, aileron and rudder control settings as well as airplane components. Data are presented without analysis for an angle of attack range of 8 to 90 degrees and clockwise and counter-clockwise rotations.

  2. Tunable magnetic nanowires for biomedical and harsh environment applications

    KAUST Repository

    Ivanov, Yurii P.; Alfadhel, Ahmed; Al-Nassar, Mohammed Y.; Perez, Jose E.; Vazquez, Manuel; Chuvilin, Andrey; Kosel, Jü rgen

    2016-01-01

    We have synthesized nanowires with an iron core and an iron oxide (magnetite) shell by a facile low-cost fabrication process. The magnetic properties of the nanowires can be tuned by changing shell thicknesses to yield remarkable new properties and multi-functionality. A multi-domain state at remanence can be obtained, which is an attractive feature for biomedical applications, where a low remanence is desirable. The nanowires can also be encoded with different remanence values. Notably, the oxidation process of single-crystal iron nanowires halts at a shell thickness of 10 nm. The oxide shell of these nanowires acts as a passivation layer, retaining the magnetic properties of the iron core even during high-temperature operations. This property renders these core-shell nanowires attractive materials for application to harsh environments. A cell viability study reveals a high degree of biocompatibility of the core-shell nanowires.

  3. A detailed study of magnetization reversal in individual Ni nanowires

    KAUST Repository

    Vidal, Enrique Vilanova; Ivanov, Yurii P.; Mohammed, Hanan; Kosel, Jü rgen

    2015-01-01

    Magnetic nanowires have emerged as essential components for a broad range of applications. In many cases, a key property of these components is the switching field, which is studied as a function of the angle between the field and the nanowire. We found remarkable differences of up to 100% between the switching fields of different nanowires from the same fabrication batch. Our experimental results and micromagnetic simulations indicate that the nanowires exhibit a single domain behavior and that the switching mechanism includes vortex domain wall motion across the nanowire. The differences between the switching fields are attributed to different cross-sections of the nanowires, as found by electron microscopy. While a circular cross-section yields the smallest switching field values, any deviation from this shape results in an increase of the switching field. The shape of the nanowires' cross-sections is thus a critical parameter that has not been previously taken into account.

  4. Tunable magnetic nanowires for biomedical and harsh environment applications

    KAUST Repository

    Ivanov, Yurii P.

    2016-04-13

    We have synthesized nanowires with an iron core and an iron oxide (magnetite) shell by a facile low-cost fabrication process. The magnetic properties of the nanowires can be tuned by changing shell thicknesses to yield remarkable new properties and multi-functionality. A multi-domain state at remanence can be obtained, which is an attractive feature for biomedical applications, where a low remanence is desirable. The nanowires can also be encoded with different remanence values. Notably, the oxidation process of single-crystal iron nanowires halts at a shell thickness of 10 nm. The oxide shell of these nanowires acts as a passivation layer, retaining the magnetic properties of the iron core even during high-temperature operations. This property renders these core-shell nanowires attractive materials for application to harsh environments. A cell viability study reveals a high degree of biocompatibility of the core-shell nanowires.

  5. A detailed study of magnetization reversal in individual Ni nanowires

    KAUST Repository

    Vidal, Enrique Vilanova

    2015-01-19

    Magnetic nanowires have emerged as essential components for a broad range of applications. In many cases, a key property of these components is the switching field, which is studied as a function of the angle between the field and the nanowire. We found remarkable differences of up to 100% between the switching fields of different nanowires from the same fabrication batch. Our experimental results and micromagnetic simulations indicate that the nanowires exhibit a single domain behavior and that the switching mechanism includes vortex domain wall motion across the nanowire. The differences between the switching fields are attributed to different cross-sections of the nanowires, as found by electron microscopy. While a circular cross-section yields the smallest switching field values, any deviation from this shape results in an increase of the switching field. The shape of the nanowires\\' cross-sections is thus a critical parameter that has not been previously taken into account.

  6. Photonic nanowires for quantum optics

    DEFF Research Database (Denmark)

    Munsch, M.; Claudon, J.; Bleuse, J.

    Photonic nanowires (PWs) are simple dielectric structures for which a very efficient and broadband spontaneous emission (SE) control has been predicted [1]. Recently, a single photon source featuring a record high efficiency was demonstrated using this geometry [2]. Using time-resolved micro-phot...

  7. Manganese oxide nanowires, films, and membranes and methods of making

    Science.gov (United States)

    Suib, Steven Lawrence [Storrs, CT; Yuan, Jikang [Storrs, CT

    2008-10-21

    Nanowires, films, and membranes comprising ordered porous manganese oxide-based octahedral molecular sieves, and methods of making, are disclosed. A single crystal ultra-long nanowire includes an ordered porous manganese oxide-based octahedral molecular sieve, and has an average length greater than about 10 micrometers and an average diameter of about 5 nanometers to about 100 nanometers. A film comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is stacked on a surface of a substrate, wherein the nanowires of each layer are substantially axially aligned. A free standing membrane comprises a microporous network comprising a plurality of single crystal nanowires in the form of a layer, wherein a plurality of layers is aggregately stacked, and wherein the nanowires of each layer are substantially axially aligned.

  8. Ballistic superconductivity in semiconductor nanowires

    Science.gov (United States)

    Zhang, Hao; Gül, Önder; Conesa-Boj, Sonia; Nowak, Michał P.; Wimmer, Michael; Zuo, Kun; Mourik, Vincent; de Vries, Folkert K.; van Veen, Jasper; de Moor, Michiel W. A.; Bommer, Jouri D. S.; van Woerkom, David J.; Car, Diana; Plissard, Sébastien R; Bakkers, Erik P.A.M.; Quintero-Pérez, Marina; Cassidy, Maja C.; Koelling, Sebastian; Goswami, Srijit; Watanabe, Kenji; Taniguchi, Takashi; Kouwenhoven, Leo P.

    2017-01-01

    Semiconductor nanowires have opened new research avenues in quantum transport owing to their confined geometry and electrostatic tunability. They have offered an exceptional testbed for superconductivity, leading to the realization of hybrid systems combining the macroscopic quantum properties of superconductors with the possibility to control charges down to a single electron. These advances brought semiconductor nanowires to the forefront of efforts to realize topological superconductivity and Majorana modes. A prime challenge to benefit from the topological properties of Majoranas is to reduce the disorder in hybrid nanowire devices. Here we show ballistic superconductivity in InSb semiconductor nanowires. Our structural and chemical analyses demonstrate a high-quality interface between the nanowire and a NbTiN superconductor that enables ballistic transport. This is manifested by a quantized conductance for normal carriers, a strongly enhanced conductance for Andreev-reflecting carriers, and an induced hard gap with a significantly reduced density of states. These results pave the way for disorder-free Majorana devices. PMID:28681843

  9. Heterojunction nanowires having high activity and stability for the reduction of oxygen: Formation by self-assembly of iron phthalocyanine with single walled carbon nanotubes (FePc/SWNTs)

    KAUST Repository

    Zhu, Jia

    2014-04-01

    A self-assembly approach to preparing iron phthalocyanine/single-walled carbon nanotube (FePc/SWNT) heterojunction nanowires as a new oxygen reduction reaction (ORR) electrocatalyst has been developed by virtue of water-adjusted dispersing in 1-cyclohexyl-pyrrolidone (CHP) of the two components. The FePc/SWNT nanowires have a higher Fermi level compared to pure FePc (d-band center, DFT. =. -0.69. eV versus -0.87. eV, respectively). Consequently, an efficient channel for transferring electron to the FePc surface is readily created, facilitating the interaction between FePc and oxygen, so enhancing the ORR kinetics. This heterojunction-determined activity in ORR illustrates a new stratagem to preparing non-noble ORR electrocatalysts of significant importance in constructing real-world fuel cells. © 2013 Elsevier Inc.

  10. Superconductivity and electronic structure in single-layer FeSe on SrTiO{sub 3} probed by scanning tunneling microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Jandke, Jasmin; Dressner, Jonas; Wulfhekel, Wulf [Physikalisches Institut, Karlsruhe Institute of Technology (Germany); Yang, Fang; Gao, Chunlei [Fudan Universitaet, Shanghai (China)

    2016-07-01

    We use high-resolution scanning tunneling spectroscopy (STS) to study single-layer FeSe on Nb-doped SrTiO{sub 3} (001). Features of bosonic excitations were observed in the measured quasiparticle density of states. Furthermore, using STS, quasiparticle interference (QPI) imaging was performed in order to map the multiband electronic structure of FeSe. Compared to previous measurements, an additional feature is visible in our measured QPI maps on a single-layer FeSe/SrTiO{sub 3}. The origin of this feature will be discussed.

  11. Platinum boride nanowires: Synthesis and characterization

    International Nuclear Information System (INIS)

    Ding Zhanhui; Qiu Lixia; Zhang Jian; Yao Bin; Cui Tian; Guan Weiming; Zheng Weitao; Wang Wenquan; Zhao Xudong; Liu Xiaoyang

    2012-01-01

    Highlights: ► Platinum boride nanowires have been synthesized via the direct current arc discharge method. ► XRD, TEM and SAED indicate that the nanowires are single-crystal PtB. ► Two broad photoluminescence emission peaks at about 586 nm and 626 nm have been observed in the PL spectroscopy of PtB nanowires. - Abstract: Platinum boride (PtB) nanowires have been successfully fabricated with direct current arc discharge method using a milled mixture of platinum (Pt) and boron nitride (BN) powders. X-ray diffraction (XRD), scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to characterize the compositions, morphology, and structures of the samples. The results show that PtB nanowires are 30–50 nm thick and 20–30 μm long. TEM and selected area electron diffraction (SAED) patterns identify that the PtB nanowires are single-crystalline in nature. A growth mechanism based on vapor–liquid–solid (VLS) process is proposed for the formation of nanowires.

  12. Constructing a generalized network design model to study air distribution in ventilation networks in subway with a single-track tunnel

    Science.gov (United States)

    Lugin, IV

    2018-03-01

    In focus are the features of construction of the generalized design model for the network method to study air distribution in ventilation system in subway with the single-track tunnel. The generalizations, assumptions and simplifications included in the model are specified. The air distribution is calculated with regard to the influence of topology and air resistances of the ventilation network sections. The author studies two variants of the subway line: half-open and closed with dead end on the both sides. It is found that the total air exchange at a subway station depends on the station location within the line. The operating mode of fans remains unaltered in this case. The article shows that elimination of air leakage in the station ventilation room allows an increase in the air flow rate by 7–8% at the same energy consumption by fans. The influence of the stop of a train in the tunnel on the air distribution is illustrated.

  13. Temperature dependent tunneling study of CaFe{sub 1.96}Ni{sub 0.04}As{sub 2} single crystals

    Energy Technology Data Exchange (ETDEWEB)

    Dutta, Anirban, E-mail: adatta@iitk.ac.in; Gupta, Anjan K. [Department of Physics, IIT Kanpur, Kanpur-208 016 (India); Thamizhavel, A. [Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Colaba, Mumbai-400 005 (India)

    2014-04-24

    We report on temperature dependent scanning tunneling microscopy and spectroscopy studies on CaFe{sub 1.96}Ni{sub 0.04}As{sub 2} single crystals in 5.4 – 19.7 K temperature range across the normal metal - superconductor transition temperature, T{sub C} = 14K. The in-situ cleaved crystals show reasonably flat surface with signatures of atomic resolution. The tunnel spectra show significant spatial inhomogeneity below T{sub C}, which reduces significantly as the temperature goes above the T{sub C}. We discuss these results in terms of an inhomogeneous electronic phase that may exist due to the vicinity of this composition to the quantum critical point.

  14. Reliability of a semi-automated 3D-CT measuring method for tunnel diameters after anterior cruciate ligament reconstruction: A comparison between soft-tissue single-bundle allograft vs. autograft.

    Science.gov (United States)

    Robbrecht, Cedric; Claes, Steven; Cromheecke, Michiel; Mahieu, Peter; Kakavelakis, Kyriakos; Victor, Jan; Bellemans, Johan; Verdonk, Peter

    2014-10-01

    Post-operative widening of tibial and/or femoral bone tunnels is a common observation after ACL reconstruction, especially with soft-tissue grafts. There are no studies comparing tunnel widening in hamstring autografts versus tibialis anterior allografts. The goal of this study was to observe the difference in tunnel widening after the use of allograft vs. autograft for ACL reconstruction, by measuring it with a novel 3-D computed tomography based method. Thirty-five ACL-deficient subjects were included, underwent anatomic single-bundle ACL reconstruction and were evaluated at one year after surgery with the use of 3-D CT imaging. Three independent observers semi-automatically delineated femoral and tibial tunnel outlines, after which a best-fit cylinder was derived and the tunnel diameter was determined. Finally, intra- and inter-observer reliability of this novel measurement protocol was defined. In femoral tunnels, the intra-observer ICC was 0.973 (95% CI: 0.922-0.991) and the inter-observer ICC was 0.992 (95% CI: 0.982-0.996). In tibial tunnels, the intra-observer ICC was 0.955 (95% CI: 0.875-0.985). The combined inter-observer ICC was 0.970 (95% CI: 0.987-0.917). Tunnel widening was significantly higher in allografts compared to autografts, in the tibial tunnels (p=0.013) as well as in the femoral tunnels (p=0.007). To our knowledge, this novel, semi-automated 3D-computed tomography image processing method has shown to yield highly reproducible results for the measurement of bone tunnel diameter and area. This series showed a significantly higher amount of tunnel widening observed in the allograft group at one-year follow-up. Level II, Prospective comparative study. Copyright © 2014 Elsevier B.V. All rights reserved.

  15. Synthesis and characterization of straight and stacked-sheet AlN nanowires with high purity

    International Nuclear Information System (INIS)

    Lei, M.; Yang, H.; Li, P.G.; Tang, W.H.

    2008-01-01

    Large-scale AlN nanowires with hexagonal crystal structure were synthesized by the direct nitridation method at high temperatures. The experimental results indicate that these single-crystalline AlN nanowires have high purity and consist of straight and stacked-sheet nanowires. It is found that straight AlN nanowire grows along [1, 1, -2, 0] direction, whereas the stacked-sheet nanowire with hexagonal cross section is along [0 0 0 1] direction. It is thought that vapor-solid (VS) mechanism should be responsible for the growth of AlN nanowires

  16. COMPARATIVE STUDY OF ARTHROSCOPIC SINGLE BUNDLE ANTERIOR CRUCIATE LIGAMENT RECONSTRUCTION AND NON-ANATOMICAL DOUBLE BUNDLE WITH SINGLE TIBIAL TUNNEL ANTERIOR CRUCIATE LIGAMENT RECONSTRUCTION WITH SEMITENDINOSUS ± GRACILIS AUTOGRAFTS USING LAXOMETRY

    Directory of Open Access Journals (Sweden)

    Sivananda

    2016-01-01

    Full Text Available BACKGROUND The knee joint is the most commonly injured of all joints and the ACL is the most commonly injured ligament. Arthroscopic reconstruction of ACL has become gold standard in treating these injuries. AIM 1. To compare the short-term results of ACL reconstruction using single bundle (one Tibial + one Femoral tunnel and non-anatomical double-bundle (one Tibial + two Femoral tunnels techniques using Hamstrings (Semitendinosus ± Gracilis graft. 2. To evaluate ACL graft reconstruction stability measured by laxometry and to find out an association with clinical findings. MATERIAL & METHODS We performed a prospective study between 2014-2015 of 20 case of ACL injuries & compared single bundle reconstruction with Non – anatomical double Bundle reconstruction with semitendinosus ± Gracilis, Autograft using laxometry. CONCLUSION Arthroscopic Non-anatomical double ACL Reconstruction is Bio-mechanically stable reconstruction resembling anatomy of the ACL.

  17. Study of the effect of varying core diameter, shell thickness and strain velocity on the tensile properties of single crystals of Cu-Ag core-shell nanowire using molecular dynamics simulations

    Science.gov (United States)

    Sarkar, Jit; Das, D. K.

    2018-01-01

    Core-shell type nanostructures show exceptional properties due to their unique structure having a central solid core of one type and an outer thin shell of another type which draw immense attention among researchers. In this study, molecular dynamics simulations are carried out on single crystals of copper-silver core-shell nanowires having wire diameter ranging from 9 to 30 nm with varying core diameter, shell thickness, and strain velocity. The tensile properties like yield strength, ultimate tensile strength, and Young's modulus are studied and correlated by varying one parameter at a time and keeping the other two parameters constant. The results obtained for a fixed wire size and different strain velocities were extrapolated to calculate the tensile properties like yield strength and Young's modulus at standard strain rate of 1 mm/min. The results show ultra-high tensile properties of copper-silver core-shell nanowires, several times than that of bulk copper and silver. These copper-silver core-shell nanowires can be used as a reinforcing agent in bulk metal matrix for developing ultra-high strength nanocomposites.

  18. Designing and building nanowires: directed nanocrystal self-assembly into radically branched and zigzag PbS nanowires

    International Nuclear Information System (INIS)

    Xu Fan; Ma Xin; Gerlein, L Felipe; Cloutier, Sylvain G

    2011-01-01

    Lead sulfide nanowires with controllable optoelectronic properties would be promising building blocks for various applications. Here, we report the hot colloidal synthesis of radically branched and zigzag nanowires through self-attachment of star-shaped and octahedral nanocrystals in the presence of multiple surfactants. We obtained high-quality single-crystal nanowires with uniform diameter along the entire length, and the size of the nanowire can be tuned by tailoring the reaction parameters. This slow oriented attachment provides a better understanding of the intricacies of this complex nanocrystal assembly process. Meanwhile, these self-assembled nanowire structures have appealing lateral conformations with narrow side arms or highly faceted edges, where strong quantum confinement can occur. Consequently, the single-crystal nanowire structures exhibit strong photoluminescence in the near-infrared region with a large blue-shift compared to the bulk material.

  19. Measuring the surface-enhanced Raman scattering enhancement factors of hot spots formed between an individual Ag nanowire and a single Ag nanocube

    International Nuclear Information System (INIS)

    Camargo, Pedro H C; Cobley, Claire M; Rycenga, Matthew; Xia Younan

    2009-01-01

    This paper describes a systematic study of the surface-enhanced Raman scattering (SERS) activity of hot spots formed between a Ag nanowire and a Ag nanocube with sharp corners. We investigated two distinct dimer structures: (i) a nanocube having one side face nearly touching the side face of a nanowire, and (ii) a nanocube having one edge nearly touching the side face of a nanowire. The field enhancements for the dimers displayed a strong dependence on laser polarization, and the strongest SERS intensities were observed for polarization along the hot-spot axis. Moreover, the detected SERS intensities were dependent on the hot-spot structure, i.e., the relative orientation of the Ag nanocube with respect to the nanowire's side face. When the dimer had a face-to-face configuration, the enhancement factor EF dimer was 1.4 x 10 7 . This corresponds to 22-fold and 24-fold increases compared to those for individual Ag nanowires and nanocubes, respectively. Conversely, when the dimer had an edge-to-face configuration, EF dimer was 4.3 x 10 6 . These results demonstrated that the number of probe molecules adsorbed at the hot spot played an important role in determining the detected SERS intensities. EF dimer was maximized when the dimer configuration allowed for a larger number of probe molecules to be trapped within the hot-spot region.

  20. CdSe quantum dot in vertical ZnSe nanowire and photonic wire for efficient single-photon emission

    DEFF Research Database (Denmark)

    Cremel, Thibault; Bellet-Amalric, Edith; Cagnon, Laurent

    conformal dielectric coating of Al2O3 on the NW-QDs using Atomic Layer Deposition so that a photonic wire is formed with the CdSe QD deterministically positioned on its axis. The collection enhancement effect is studied by measuring the emission (with pulse excitation, at saturation intensity) of single...

  1. Attosecond-controlled photoemission from metal nanowire tips in the few-electron regime

    KAUST Repository

    Ahn, B.

    2017-02-07

    Metal nanotip photoemitters have proven to be versatile in fundamental nanoplasmonics research and applications, including, e.g., the generation of ultrafast electron pulses, the adiabatic focusing of plasmons, and as light-triggered electron sources for microscopy. Here, we report the generation of high energy photoelectrons (up to 160 eV) in photoemission from single-crystalline nanowire tips in few-cycle, 750-nm laser fields at peak intensities of (2-7.3) × 1012 W/cm2. Recording the carrier-envelope phase (CEP)-dependent photoemission from the nanowire tips allows us to identify rescattering contributions and also permits us to determine the high-energy cutoff of the electron spectra as a function of laser intensity. So far these types of experiments from metal nanotips have been limited to an emission regime with less than one electron per pulse. We detect up to 13 e/shot and given the limited detection efficiency, we expect up to a few ten times more electrons being emitted from the nanowire. Within the investigated intensity range, we find linear scaling of cutoff energies. The nonlinear scaling of electron count rates is consistent with tunneling photoemission occurring in the absence of significant charge interaction. The high electron energy gain is attributed to field-induced rescattering in the enhanced nanolocalized fields at the wires apex, where a strong CEP-modulation is indicative of the attosecond control of photoemission.

  2. Scanning tunneling spectroscopic studies of superconducting NbN single crystal thin films at 4.2 K

    International Nuclear Information System (INIS)

    Kashiwaya, S.; Koyanagi, M.; Matsuda, M.; Shoji, A.; Shibata, H.

    1991-01-01

    This paper reports on a Low Temperature Scanning Tunneling Microscope (LTSTM) constructed to study the microscopic properties of superconductors. It has atomic resolution from room temperature to 4.2 K. Conductance spectra obtained between a Pt tip and a NbN thin film agreed well with theoretical curves based on the BCS theory

  3. Photoconductive response of a single Au nanorod coupled to LaAlO3/SrTiO3 nanowires

    International Nuclear Information System (INIS)

    Jnawali, Giriraj; Chen, Lu; Huang, Mengchen; Lee, Hyungwoo; Ryu, Sangwoo; Podkaminer, Jacob P.; Eom, Chang-Beom; Irvin, Patrick; Levy, Jeremy

    2015-01-01

    Terahertz (THz) spectroscopy is an important tool that provides resonant access to free carrier motion, molecular rotation, lattice vibrations, excitonic, spin, and other degrees of freedom. Current methods using THz radiation suffer from limits due to diffraction or low-sensitivity, preventing application at the scale of single nanoscale objects. Here, we present coupling between plasmonic degrees of freedom in a single gold nanorod and broadband THz emission generated from a proximal LaAlO 3 /SrTiO 3 nanostructure. A strong enhancement of THz emission is measured for incident radiation that is linearly polarized along the long axis of the nanorod. This demonstration paves the way for the investigation of near-field plasmonic coupling in a variety of molecular-scale systems

  4. Methods of fabricating nanostructures and nanowires and devices fabricated therefrom

    Energy Technology Data Exchange (ETDEWEB)

    Majumdar, Arun; Shakouri, Ali; Sands, Timothy D.; Yang, Peidong; Mao, Samuel S.; Russo, Richard E.; Feick, Henning; Weber, Eicke R.; Kind, Hannes; Huang, Michael; Yan, Haoquan; Wu, Yiying; Fan, Rong

    2018-01-30

    One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as "nanowires", include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

  5. Vertical nanowire architectures

    DEFF Research Database (Denmark)

    Vlad, A.; Mátéfl-Tempfli, M.; Piraux, L.

    2010-01-01

    Nanowires and statistics: A statistical process for reading ultradense arrays of nanostructured materials is presented (see image). The experimental realization is achieved through selective nanowire growth using porous alumina templates. The statistical patterning approach is found to provide ri...

  6. Advantages and Disadvantages of Transtibial, Anteromedial Portal, and Outside-In Femoral Tunnel Drilling in Single-Bundle Anterior Cruciate Ligament Reconstruction: A Systematic Review.

    Science.gov (United States)

    Robin, Brett N; Jani, Sunil S; Marvil, Sean C; Reid, John B; Schillhammer, Carl K; Lubowitz, James H

    2015-07-01

    Controversy exists regarding the best method for creating the knee anterior cruciate ligament (ACL) femoral tunnel or socket. The purpose of this study was to systematically review the risks, benefits, advantages, and disadvantages of the endoscopic transtibial (TT) technique, anteromedial portal technique, outside-in technique, and outside-in retrograde drilling technique for creating the ACL femoral tunnel. A PubMed search of English-language studies published between January 1, 2000, and February 17, 2014, was performed using the following keywords: "anterior cruciate ligament" AND "femoral tunnel." Included were studies reporting risks, benefits, advantages, and/or disadvantages of any ACL femoral technique. In addition, references of included articles were reviewed to identify potential studies missed in the original search. A total of 27 articles were identified through the search. TT technique advantages include familiarity and proven long-term outcomes; disadvantages include the risk of nonanatomic placement because of constrained (TT) drilling. Anteromedial portal technique advantages include unconstrained anatomic placement; disadvantages include technical challenges, short tunnels or sockets, and posterior-wall blowout. Outside-in technique advantages include unconstrained anatomic placement; disadvantages include the need for 2 incisions. Retrograde drilling technique advantages include unconstrained anatomic placement, as well as all-epiphyseal drilling in skeletally immature patients; disadvantages include the need for fluoroscopy for all-epiphyseal drilling. There is no one, single, established "gold-standard" technique for creation of the ACL femoral socket. Four accepted techniques show diverse and subjective advantages, disadvantages, risks, and benefits. Level V, systematic review of Level II through V evidence. Copyright © 2015 Arthroscopy Association of North America. Published by Elsevier Inc. All rights reserved.

  7. Coherent Anti-Stokes and Coherent Stokes in Raman Scattering by Superconducting Nanowire Single-Photon Detector for Temperature Measurement

    Directory of Open Access Journals (Sweden)

    Annepu Venkata Naga Vamsi

    2016-01-01

    Full Text Available We have reported the measurement of temperature by using coherent anti-Stroke and coherent Stroke Raman scattering using superconducting nano wire single-photon detector. The measured temperatures by both methods (Coherent Anti-Raman scattering & Coherent Stroke Raman scattering and TC 340 are in good accuracy of ± 5 K temperature range. The length of the pipe line under test can be increased by increasing the power of the pump laser. This methodology can be widely used to measure temperatures at instantaneous positions in test pipe line or the entire temperature of the pipe line under test.

  8. Multi-channeled NbN superconducting single photon detectors (SSPDs) system with NbN meander nanowires

    International Nuclear Information System (INIS)

    Fujiwara, Mikio; Sasaki, Masahide; Miki, Shigehito; Wang Zhen

    2009-01-01

    A superconducting single photon detector (SSPD) is promising candidate of the detector in a quantum key distribution (QKD) system, because of its low dark count and high speed repetition rate. We have developed the SSPD system cooled by a GM cryocooler. In this system, and the work surface can be cooled 2.95 K and up to 6 SSPDs can be installed. The active areas of SSPDs are 10x10 μm 2 or 20x20 μm 2 , and the system detection efficiency at dark count rate of 100 Hz reached 2.6% at a wavelength of 1550 nm.

  9. Theoretical studies of the stretching behavior of carbon nanowires and their superplasticity

    Energy Technology Data Exchange (ETDEWEB)

    Li, H. [Physics Department, Ocean University of China, Qingdao (China); Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, School of Material Science and Engineering, Shandong University (China)], E-mail: lihuilmy@hotmail.com; Sun, F.W.; Li, Y.F. [Physics Department, Ocean University of China, Qingdao (China); Liu, X.F. [Key Laboratory of Liquid Structure and Heredity of Materials, Ministry of Education, School of Material Science and Engineering, Shandong University (China); Liew, K.M. [Department of Building and Construction, City University of Hong Kong, Kowloon (Hong Kong)

    2008-09-15

    The tensile deformation of carbon nanowire (CNW) is examined by molecular dynamics method. Results indicate that the carbon nanowire undergoes superplastic deformation. The maximum tensile strain of the carbon nanowire could increase to nearly 245% before tensile failure. The maximum stress for a CNW is 16.65 GPa which is lower than carbon nanotube. During the deformation, the carbon nanowire is found to be drawn a single atomic chain.

  10. Optimizing the top profile of a nanowire for maximum forward emission

    Institute of Scientific and Technical Information of China (English)

    Wang Dong-Lin; Yu Zhong-Yuan; Liu Yu-Min; Guo Xiao-Tao; Cao Gui; Feng Hao

    2011-01-01

    The optimal top structure of a nanowire quantum emitter single photon source is significant in improving performance.Based on the axial symmetry of a cylindrical nanowire,this paper optimizes the top profile of a nanowire for the maximum forward emission by combining the geometry projection method and the finite element method.The results indicate that the nanowire with a cambered top has the stronger emission in the forward direction,which is helpful to improve the photon collection efficiency.

  11. Permanent bending and alignment of ZnO nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Borschel, Christian; Spindler, Susann; Oertel, Michael; Ronning, Carsten [Institut fuer Festkoerperphysik, Friedrich-Schiller-Universitaet Jena, Max-Wien-Platz 1, 07743 Jena (Germany); Lerose, Damiana [MPI fuer Mikrostrukturphysik, Weinberg 2, 06120 Halle/Saale (Germany); Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Bochmann, Arne [Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); Christiansen, Silke H. [Institut fuer Photonische Technologien, Albert-Einstein-Strasse 9, 07745 Jena (Germany); MPI fuer die Physik des Lichts, Guenther-Scharowsky-Str. 1, 91058 Erlangen (Germany); Nietzsche, Sandor [Zentrum fuer Elektronenmikroskopie, Friedrich-Schiller-Universitaet Jena, Ziegelmuehlenweg 1, 07743 Jena (Germany)

    2011-07-01

    Ion beams can be used to bend or re-align nanowires permanently, after they have been grown. We have irradiated ZnO nanowires with ions of different species and energy, achieving bending and alignment in various directions. We study the bending of single nanowires as well as the simultaneous alignment of large ensembles of ZnO nanowires in detail. Computer simulations show that the bending is initiated by ion beam induced damage. Dislocations are identified to relax stresses and make the bending and alignment permanent and resistant against annealing procedures.

  12. Ultraviolet photodetectors made from SnO2 nanowires

    International Nuclear Information System (INIS)

    Wu, Jyh-Ming; Kuo, Cheng-Hsiang

    2009-01-01

    SnO 2 nanowires can be synthesized on alumina substrates and formed into an ultraviolet (UV) photodetector. The photoelectric current of the SnO 2 nanowires exhibited a rapid photo-response as a UV lamp was switched on and off. The ratio of UV-exposed current to dark current has been investigated. The SnO 2 nanowires were synthesized by a vapor-liquid-solid process at a temperature of 900 o C. It was found that the nanowires were around 70-100 nm in diameter and several hundred microns in length. High-resolution transmission electron microscopy (HRTEM) image indicated that the nanowires grew along the [200] axis as a single crystallinity. Cathodoluminescence (CL), thin-film X-ray diffractometry, and X-ray photoelectron spectroscopy (XPS) were used to characterize the as-synthesized nanowires.

  13. Electrochemical synthesis of CORE-shell magnetic nanowires

    KAUST Repository

    Ovejero, Jesús G.

    2015-04-16

    (Fe, Ni, CoFe) @ Au core-shell magnetic nanowires have been synthesized by optimized two-step potentiostatic electrodeposition inside self-assembled nanopores of anodic aluminium templates. The optimal electrochemical parameters (e.g., potential) have been firstly determined for the growth of continuous Au nanotubes at the inner wall of pores. Then, a magnetic core was synthesized inside the Au shells under suitable electrochemical conditions for a wide spectrum of single elements and alloy compositions (e.g., Fe, Ni and CoFe alloys). Novel opportunities offered by such nanowires are discussed particularly the magnetic behavior of (Fe, Ni, CoFe) @ Au core-shell nanowires was tested and compared with that of bare TM nanowires. These core-shell nanowires can be released from the template so, opening novel opportunities for biofunctionalization of individual nanowires.

  14. On the thermomechanical deformation of silver shape memory nanowires

    International Nuclear Information System (INIS)

    Park, Harold S.; Ji, Changjiang

    2006-01-01

    We present an analysis of the uniaxial thermomechanical deformation of single-crystal silver shape memory nanowires using atomistic simulations. We first demonstrate that silver nanowires can show both shape memory and pseudoelastic behavior, then perform uniaxial tensile loading of the shape memory nanowires at various deformation temperatures, strain rates and heat transfer conditions. The simulations show that the resulting mechanical response of the shape memory nanowires depends strongly upon the temperature during deformation, and can be fundamentally different from that observed in bulk polycrystalline shape memory alloys. The energy and temperature signatures of uniaxially loaded silver shape memory nanowires are correlated to the observed nanowire deformation, and are further discussed in comparison to bulk polycrystalline shape memory alloy behavior

  15. Scalable Top-Down Approach Tailored by Interferometric Lithography to Achieve Large-Area Single-Mode GaN Nanowire Laser Arrays on Sapphire Substrate.

    Science.gov (United States)

    Behzadirad, Mahmoud; Nami, Mohsen; Wostbrock, Neal; Zamani Kouhpanji, Mohammad Reza; Feezell, Daniel F; Brueck, Steven R J; Busani, Tito

    2018-03-27

    GaN nanowires are promising for optical and optoelectronic applications because of their waveguiding properties and large optical band gap. However, developing a precise, scalable, and cost-effective fabrication method with a high degree of controllability to obtain high-aspect-ratio nanowires with high optical properties and minimum crystal defects remains a challenge. Here, we present a scalable two-step top-down approach using interferometric lithography, for which parameters can be controlled precisely to achieve highly ordered arrays of nanowires with excellent quality and desired aspect ratios. The wet-etch mechanism is investigated, and the etch rates of m-planes {11̅00} (sidewalls) were measured to be 2.5 to 70 nm/h depending on the Si doping concentration. Using this method, uniform nanowire arrays were achieved over a large area (>10 5 μm 2 ) with an spect ratio as large as 50, a radius as small as 17 nm, and atomic-scale sidewall roughness (top-down approach using interferometric lithography and is promising for fabrication of III-nitride-based nanophotonic devices (radial/axial) on the original substrate.

  16. Effect of orientation on deformation behavior of Fe nanowires: A molecular dynamics study

    Science.gov (United States)

    Sainath, G.; Srinivasan, V. S.; Choudhary, B. K.; Mathew, M. D.; Jayakumar, T.

    2014-04-01

    Molecular dynamics simulations have been carried out to study the effect of crystal orientation on tensile deformation behaviour of single crystal BCC Fe nanowires at 10 K. Two nanowires with an initial orientation of /{100} and /{111} have been chosen for this study. The simulation results show that the deformation mechanisms varied with crystal orientation. The nanowire with an initial orientation of /{100} deforms predominantly by twinning mechanism, whereas the nanowire oriented in /{111}, deforms by dislocation plasticity. In addition, the single crystal oriented in /{111} shows higher strength and elastic modulus than /{100} oriented nanowire.

  17. Electron emission from individual indium arsenide semiconductor nanowires

    NARCIS (Netherlands)

    Heeres, E.C.; Bakkers, E.P.A.M.; Roest, A.L.; Kaiser, M.A.; Oosterkamp, T.H.; Jonge, de N.

    2007-01-01

    A procedure was developed to mount individual semiconductor indium arsenide nanowires onto tungsten support tips to serve as electron field-emission sources. The electron emission properties of the single nanowires were precisely determined by measuring the emission pattern, current-voltage curve,

  18. Fabrication of multilayer nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Kaur, Jasveer, E-mail: kaurjasveer89@gmail.com; Singh, Avtar; Kumar, Davinder [Department of Physics, Punjabi University Patiala, 147002, Punjab (India); Thakur, Anup; Kaur, Raminder, E-mail: raminder-k-saini@yahoo.com [Department of Basic and Applied Sciences, Punjabi University Patiala, 147002, Punjab (India)

    2016-05-06

    Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.

  19. Fabrication of multilayer nanowires

    International Nuclear Information System (INIS)

    Kaur, Jasveer; Singh, Avtar; Kumar, Davinder; Thakur, Anup; Kaur, Raminder

    2016-01-01

    Multilayer nanowires were fabricated by potentiostate ectrodeposition template synthesis method into the pores of polycarbonate membrane. In present work layer by layer deposition of two different metals Ni and Cu in polycarbonate membrane having pore size of 600 nm were carried out. It is found that the growth of nanowires is not constant, it varies with deposition time. Scanning electron microscopy (SEM) is used to study the morphology of fabricated multilayer nanowires. An energy dispersive X-ray spectroscopy (EDS) results confirm the composition of multilayer nanowires. The result shows that multilayer nanowires formed is dense.

  20. The impact of silicon nano-wire technology on the design of single-work-function CMOS transistors and circuits

    International Nuclear Information System (INIS)

    Bindal, Ahmet; Hamedi-Hagh, Sotoudeh

    2006-01-01

    This three-dimensional exploratory study on vertical silicon wire MOS transistors with metal gates and undoped bodies demonstrates that these transistors dissipate less power and occupy less layout area while producing comparable transient response with respect to the state-of-the-art bulk and SOI technologies. The study selects a single metal gate work function for both NMOS and PMOS transistors to alleviate fabrication difficulties and then determines a common device geometry to produce an OFF current smaller than 1 pA for each transistor. Once an optimum wire radius and effective channel length is determined, DC characteristics including threshold voltage roll-off, drain-induced barrier lowering and sub-threshold slope of each transistor are measured. Simple CMOS gates such as an inverter, two- and three-input NAND, NOR and XOR gates and a full adder, composed of the optimum NMOS and PMOS transistors, are built to measure transient performance, power dissipation and layout area. Simulation results indicate that worst-case transient time and worst-case delay are 1.63 and 1.46 ps, respectively, for a two-input NAND gate and 7.51 and 7.43 ps, respectively, for a full adder for a fan-out of six transistor gates (24 aF). Worst-case power dissipation is 62.1 nW for a two-input NAND gate and 118.1 nW for a full adder at 1 GHz for the same output capacitance. The layout areas are 0.0066 μm 2 for the two-input NAND gate and 0.049 μm 2 for the full adder circuits

  1. A 350 mK, 9 T scanning tunneling microscope for the study of superconducting thin films on insulating substrates and single crystals.

    Science.gov (United States)

    Kamlapure, Anand; Saraswat, Garima; Ganguli, Somesh Chandra; Bagwe, Vivas; Raychaudhuri, Pratap; Pai, Subash P

    2013-12-01

    We report the construction and performance of a low temperature, high field scanning tunneling microscope (STM) operating down to 350 mK and in magnetic fields up to 9 T, with thin film deposition and in situ single crystal cleaving capabilities. The main focus lies on the simple design of STM head and a sample holder design that allows us to get spectroscopic data on superconducting thin films grown in situ on insulating substrates. Other design details on sample transport, sample preparation chamber, and vibration isolation schemes are also described. We demonstrate the capability of our instrument through the atomic resolution imaging and spectroscopy on NbSe2 single crystal and spectroscopic maps obtained on homogeneously disordered NbN thin film.

  2. Local stabilization of single-walled carbon nanotubes on Si(100)-2 x 1:H via nanoscale hydrogen desorption with an ultrahigh vacuum scanning tunnelling microscope

    International Nuclear Information System (INIS)

    Albrecht, Peter M; Lyding, Joseph W

    2007-01-01

    An ultrahigh vacuum scanning tunnelling microscope (UHV-STM) was used to modify the interface between isolated ∼10 A-diameter single-walled carbon nanotubes (SWNTs) and the hydrogen-passivated Si(100) surface. Room-temperature UHV-STM desorption of hydrogen at the SWNT/H-Si(100) interface resulted in the local mechanical stabilization of tubes originally perturbed by the rastered STM tip under nominal imaging conditions. For the section of the SWNT contacted by depassivated Si, a topographic depression of 1.5 A (1 A) was measured in the case of parallel (nearly perpendicular) alignment between the tube axis and the Si dimer rows, in agreement with existing first-principles calculations. The compatibility of hydrogen-resist UHV-STM nanolithography with SWNTs adsorbed on H-Si(100) would enable the atomically precise placement of single molecules in proximity to the tube for the bottom-up fabrication of molecular electronic devices

  3. Direct, coherent and incoherent intermediate state tunneling and scanning tunnel microscopy (STM)

    International Nuclear Information System (INIS)

    Halbritter, J.

    1997-01-01

    Theory and experiment in tunneling are still qualitative in nature, which hold true also for the latest developments in direct-, resonant-, coherent- and incoherent-tunneling. Those tunnel processes have recently branched out of the field of ''solid state tunnel junctions'' into the fields of scanning tunnel microscopy (STM), single electron tunneling (SET) and semiconducting resonant tunnel structures (RTS). All these fields have promoted the understanding of tunneling in different ways reaching from the effect of coherence, of incoherence and of charging in tunneling, to spin flip or inelastic effects. STM allows not only the accurate measurements of the tunnel current and its voltage dependence but, more importantly, the easy quantification via the (quantum) tunnel channel conductance and the distance dependence. This new degree of freedom entering exponentially the tunnel current allows an unique identification of individual tunnel channels and their quantification. In STM measurements large tunnel currents are observed for large distances d > 1 nm explainable by intermediate state tunneling. Direct tunneling with its reduced tunnel time and reduced off-site Coulomb charging bridges distances below 1 nm, only. The effective charge transfer process with its larger off-site and on-site charging at intermediate states dominates tunnel transfer in STM, biology and chemistry over distances in the nm-range. Intermediates state tunneling becomes variable range hopping conduction for distances larger than d > 2 nm, for larger densities of intermediate states n 1 (ε) and for larger temperatures T or voltages U, still allowing high resolution imaging

  4. Nanowire growth from the viewpoint of the thin film polylayer growth theory

    Science.gov (United States)

    Kashchiev, Dimo

    2018-03-01

    The theory of polylayer growth of thin solid films is employed for description of the growth kinetics of single-crystal nanowires. Expressions are derived for the dependences of the height h and radius r of a given nanowire on time t, as well as for the h(r) dependence. These dependences are applicable immediately after the nanowire nucleation on the substrate and thus include the period during which the nucleated nanowire changes its shape from that of cap to that of column. The analysis shows that the nanowire cap-to-column shape transition is continuous and makes it possible to kinetically define the nanowire shape-transition radius by means of the nanowire radial and axial growth rates. The obtained h(t), r(t) and h(r) dependences are found to provide a good description of available experimental data for growth of self-nucleated GaN nanowires by the vapor-solid mechanism.

  5. Scanning-tunneling microscope imaging of single-electron solitons in a material with incommensurate charge-density waves.

    Science.gov (United States)

    Brazovskii, Serguei; Brun, Christophe; Wang, Zhao-Zhong; Monceau, Pierre

    2012-03-02

    We report on scanning-tunneling microscopy experiments in a charge-density wave (CDW) system allowing visually capturing and studying in detail the individual solitons corresponding to the self-trapping of just one electron. This "Amplitude Soliton" is marked by vanishing of the CDW amplitude and by the π shift of its phase. It might be the realization of the spinon--the long-sought particle (along with the holon) in the study of science of strongly correlated electronic systems. As a distinct feature we also observe one-dimensional Friedel oscillations superimposed on the CDW which develop independently of solitons.

  6. Constricted nanowire with stabilized magnetic domain wall

    International Nuclear Information System (INIS)

    Sbiaa, R.; Al Bahri, M.

    2016-01-01

    Domain wall (DW)-based magnetic memory offers the possibility for increasing the storage capacity. However, stability of DW remains the major drawback of this scheme. In this letter, we propose a stepped nanowire for pinning DW in a desirable position. From micromagnetic simulation, the proposed design applied to in-plane magnetic anisotropy materials shows that by adjusting the nanowire step size and its width it is possible to stabilize DW for a desirable current density range. In contrast, only a movement of DW could be seen for conventional nanowire. An extension to a multi-stepped nanowire could be used for multi-bit per cell magnetic memory. - Highlights: • A stepped nanowire is proposed to pin domain wall in desired position. • The new structure can be made by a simple off set of two single nanowires. • The critical current for moving domain wall from one state to the other could be tuned by adjusting the geometry of the device. • The device could be used for multi-bit per cell memory by extending the steps in the device.

  7. Aluminum-catalyzed silicon nanowires: Growth methods, properties, and applications

    Energy Technology Data Exchange (ETDEWEB)

    Hainey, Mel F.; Redwing, Joan M. [Department of Materials Science and Engineering, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)

    2016-12-15

    Metal-mediated vapor-liquid-solid (VLS) growth is a promising approach for the fabrication of silicon nanowires, although residual metal incorporation into the nanowires during growth can adversely impact electronic properties particularly when metals such as gold and copper are utilized. Aluminum, which acts as a shallow acceptor in silicon, is therefore of significant interest for the growth of p-type silicon nanowires but has presented challenges due to its propensity for oxidation. This paper summarizes the key aspects of aluminum-catalyzed nanowire growth along with wire properties and device results. In the first section, aluminum-catalyzed nanowire growth is discussed with a specific emphasis on methods to mitigate aluminum oxide formation. Next, the influence of growth parameters such as growth temperature, precursor partial pressure, and hydrogen partial pressure on nanowire morphology is discussed, followed by a brief review of the growth of templated and patterned arrays of nanowires. Aluminum incorporation into the nanowires is then discussed in detail, including measurements of the aluminum concentration within wires using atom probe tomography and assessment of electrical properties by four point resistance measurements. Finally, the use of aluminum-catalyzed VLS growth for device fabrication is reviewed including results on single-wire radial p-n junction solar cells and planar solar cells fabricated with nanowire/nanopyramid texturing.

  8. Au nanowire junction breakup through surface atom diffusion

    Science.gov (United States)

    Vigonski, Simon; Jansson, Ville; Vlassov, Sergei; Polyakov, Boris; Baibuz, Ekaterina; Oras, Sven; Aabloo, Alvo; Djurabekova, Flyura; Zadin, Vahur

    2018-01-01

    Metallic nanowires are known to break into shorter fragments due to the Rayleigh instability mechanism. This process is strongly accelerated at elevated temperatures and can completely hinder the functioning of nanowire-based devices like e.g. transparent conductive and flexible coatings. At the same time, arranged gold nanodots have important applications in electrochemical sensors. In this paper we perform a series of annealing experiments of gold and silver nanowires and nanowire junctions at fixed temperatures 473, 673, 873 and 973 K (200 °C, 400 °C, 600 °C and 700 °C) during a time period of 10 min. We show that nanowires are especially prone to fragmentation around junctions and crossing points even at comparatively low temperatures. The fragmentation process is highly temperature dependent and the junction region breaks up at a lower temperature than a single nanowire. We develop a gold parametrization for kinetic Monte Carlo simulations and demonstrate the surface diffusion origin of the nanowire junction fragmentation. We show that nanowire fragmentation starts at the junctions with high reliability and propose that aligning nanowires in a regular grid could be used as a technique for fabricating arrays of nanodots.

  9. Molecular assembly and electro polymerization of 3,4-ethylenedioxy thiophene on Au(100) single crystal electrode using in-situ electrochemical scanning tunneling microscopy

    International Nuclear Information System (INIS)

    Garcia, Jonyl L.; Tongol, Bernard John V.; ShuehLin Yau

    2012-01-01

    Electrochemical scanning tunneling microscopy (Ec-STM) is a powerful technique that can provide molecular-level information regarding electrode surface processes in-situ in electrolyte solvent under ambient conditions. In this study, the adsorption and electro polymerization of an industrially important conducting polymer precursor, 3,4-ethylenedioxy thiophene (EDOT), on Au (100) single crystal was probed using Ec-STM. The Au (100) single crystal electrode substrate used for this study was fabricated using the well-known Clavilier's flame melting procedure. Cyclic voltammetry (CV) was used along with Ec-STM to characterize the bare, EDOT-modified, and poly(EDOT)-modified Au (100) single crystal electrode. Time-dependent Ec-STM imaging at 0.550 V showed the formation of an EDOT self-assembled monolayer through 2-D surface dillusion. The resulting EDOT molecular assembly on Au (100) single crystal electrode was found to fit in a 4√2χ3√2 unit cell. Difference in apparent corrugation between molecular rows was attributed to different angular orientation with respect to the substrate. The electro polymerization of EDOT on Au (100) single crystal electrode was done by potentiostatic and potentiodynamic methods. Both methods suggested a solution-process mechanism for EDOT electro polymerization. (author)

  10. Electronic noise of superconducting tunnel junction detectors

    International Nuclear Information System (INIS)

    Jochum, J.; Kraus, H.; Gutsche, M.; Kemmather, B.; Feilitzsch, F. v.; Moessbauer, R.L.

    1994-01-01

    The optimal signal to noise ratio for detectors based on superconducting tunnel junctions is calculated and compared for the cases of a detector consisting of one single tunnel junction, as well as of series and of parallel connections of such tunnel junctions. The influence of 1 / f noise and its dependence on the dynamical resistance of tunnel junctions is discussed quantitatively. A single tunnel junction yields the minimum equivalent noise charge. Such a tunnel junction exhibits the best signal to noise ratio if the signal charge is independent of detector size. In case, signal charge increases with detector size, a parallel or a series connection of tunnel junctions would provide the optimum signal to noise ratio. The equivalent noise charge and the respective signal to noise ratio are deduced as functions of tunnel junction parameters such as tunneling time, quasiparticle lifetime, etc. (orig.)

  11. Crystal structure redetermination of ε-Ni.sub.3./sub.Si.sub.2./sub. from a single nanowire by dynamical refinement of precession electron diffraction data

    Czech Academy of Sciences Publication Activity Database

    Correa, Cinthia Antunes; Klementová, Mariana; Dřínek, Vladislav; Kopeček, Jaromír; Palatinus, Lukáš

    2016-01-01

    Roč. 672, Jul (2016), s. 505-509 ISSN 0925-8388 R&D Projects: GA ČR GA13-25747S Institutional support: RVO:68378271 ; RVO:67985858 Keywords : precession electron diffraction tomography * structure determination * nanowire * dynamical refinement Subject RIV: BM - Solid Matter Physics ; Magnetism; CA - Inorganic Chemistry (UCHP-M) OBOR OECD: Condensed matter physics (including formerly solid state physics, supercond.); Inorganic and nuclear chemistry (UCHP-M) Impact factor: 3.133, year: 2016

  12. Semiconductor Nanowires and Nanotubes for Energy Conversion

    Science.gov (United States)

    Fardy, Melissa Anne

    In recent years semiconductor nanowires and nanotubes have garnered increased attention for their unique properties. With their nanoscale dimensions comes high surface area and quantum confinement, promising enhancements in a wide range of applications. 1-dimensional nanostructures are especially attractive for energy conversion applications where photons, phonons, and electrons come into play. Since the bohr exciton radius and phonon and electron mean free paths are on the same length scales as nanowire diameters, optical, thermal, and electrical properties can be tuned by simple nanowire size adjustments. In addition, the high surface area inherent to nanowires and nanotubes lends them towards efficient charge separation and superior catalytic performance. In thermoelectric power generation, the nanoscale wire diameter can effectively scatter phonons, promoting reductions in thermal conductivity and enhancements in the thermoelectric figure of merit. To that end, single-crystalline arrays of PbS, PbSe, and PbTe nanowires have been synthesized by a chemical vapor transport approach. The electrical and thermal transport properties of the nanowires were characterized to investigate their potential as thermoelectric materials. Compared to bulk, the lead chalcogenide nanowires exhibit reduced thermal conductivity below 100 K by up to 3 orders of magnitude, suggesting that they may be promising thermoelectric materials. Smaller diameters and increased surface roughness are expected to give additional enhancements. The solution-phase synthesis of PbSe nanowires via oriented attachment of nanoparticles enables facile surface engineering and diameter control. Branched PbSe nanowires synthesized by this approach showed near degenerately doped charge carrier concentrations. Compared to the bulk, the PbSe nanowires exhibited a similar Seebeck coefficient and a significant reduction in thermal conductivity in the temperature range 20 K to 300 K. Thermal annealing of the Pb

  13. Controlling the exciton energy of a nanowire quantum dot by strain fields

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Yan; Zhang, Jiaxiang; Ding, Fei, E-mail: f.ding@ifw-dresden.de [Institute for Integrative Nanosciences, IFW Dresden, Helmholtz Strasse 20, 01069 Dresden (Germany); Zadeh, Iman Esmaeil; Jöns, Klaus D.; Fognini, Andreas; Zwiller, Val [Kavli Institute of Nanoscience, Delft University of Technology, 2600 GA Delft (Netherlands); Reimer, Michael E. [Institute for Quantum Computing and Department of Electrical and Computer Engineering, University of Waterloo, Waterloo, N2L 3G1 (Canada); Dalacu, Dan; Poole, Philip J. [National Research Council, Ottawa, Ontario K1A 0R6 (Canada); Schmidt, Oliver G. [Institute for Integrative Nanosciences, IFW Dresden, Helmholtz Strasse 20, 01069 Dresden (Germany); Material Systems for Nanoelectronics, Chemnitz University of Technology, Reichenhainer Strasse 70, 09107 Chemnitz (Germany)

    2016-05-02

    We present an experimental route to engineer the exciton energies of single quantum dots in nanowires. By integrating the nanowires onto a piezoelectric crystal, we controllably apply strain fields to the nanowire quantum dots. Consequently, the exciton energy of a single quantum dot in the nanowire is shifted by several meVs without degrading its optical intensity and single-photon purity. Second-order autocorrelation measurements are performed at different strain fields on the same nanowire quantum dot. The suppressed multi-photon events at zero time delay clearly verify that the quantum nature of single-photon emission is well preserved under external strain fields. The work presented here could facilitate on-chip optical quantum information processing with the nanowire based single photon emitters.

  14. Exchange coupling and magnetic anisotropy of exchanged-biased quantum tunnelling single-molecule magnet Ni3Mn2 complexes using theoretical methods based on Density Functional Theory.

    Science.gov (United States)

    Gómez-Coca, Silvia; Ruiz, Eliseo

    2012-03-07

    The magnetic properties of a new family of single-molecule magnet Ni(3)Mn(2) complexes were studied using theoretical methods based on Density Functional Theory (DFT). The first part of this study is devoted to analysing the exchange coupling constants, focusing on the intramolecular as well as the intermolecular interactions. The calculated intramolecular J values were in excellent agreement with the experimental data, which show that all the couplings are ferromagnetic, leading to an S = 7 ground state. The intermolecular interactions were investigated because the two complexes studied do not show tunnelling at zero magnetic field. Usually, this exchange-biased quantum tunnelling is attributed to the presence of intermolecular interactions calculated with the help of theoretical methods. The results indicate the presence of weak intermolecular antiferromagnetic couplings that cannot explain the ferromagnetic value found experimentally for one of the systems. In the second part, the goal is to analyse magnetic anisotropy through the calculation of the zero-field splitting parameters (D and E), using DFT methods including the spin-orbit effect.

  15. Tunable field emission characteristics of ZnO nanowires coated with varied thickness of lanthanum boride thin films

    International Nuclear Information System (INIS)

    Zhao, C.X.; Li, Y.F.; Chen, Jun; Deng, S.Z.; Xu, N.S.

    2013-01-01

    Lanthanum boride (LaB x ) thin films with various thicknesses were deposited on ZnO nanowire arrays by electron beam evaporation. Field emission characteristics of ZnO nanowires show close dependence on LaB x coating thickness. The turn-on field increases with increasing LaB x coating thickness from 10 nm to 50 nm. The observed phenomena were explained by a model that the tunneling at ZnO/LaB x interface dominates the emission process. - Highlights: ► Coating thickness dependence of field emission characteristics of ZnO nanowires was observed from LaB x coated ZnO nanowires. ► More stable field emission was observed from ZnO nanowires with LaB x coating. ► A model was proposed that the tunneling at ZnO/LaB x interface dominates the emission process

  16. From nanodiamond to nanowires.

    Energy Technology Data Exchange (ETDEWEB)

    Barnard, A.; Materials Science Division

    2005-01-01

    Recent advances in the fabrication and characterization of semiconductor and metallic nanowires are proving very successful in meeting the high expectations of nanotechnologists. Although the nanoscience surrounding sp{sup 3} bonded carbon nanotubes has continued to flourish over recent years the successful synthesis of the sp{sup 3} analogue, diamond nanowires, has been limited. This prompts questions as to whether diamond nanowires are fundamentally unstable. By applying knowledge obtained from examining the structural transformations in nanodiamond, a framework for analyzing the structure and stability of diamond nanowires may be established. One possible framework will be discussed here, supported by results of ab initio density functional theory calculations used to study the structural relaxation of nanodiamond and diamond nanowires. The results show that the structural stability and electronic properties of diamond nanowires are dependent on the surface morphology, crystallographic direction of the principal axis, and the degree of surface hydrogenation.

  17. Thermoelectric properties of semiconductor nanowire networks

    Science.gov (United States)

    Roslyak, Oleksiy; Piryatinski, Andrei

    2016-03-01

    To examine the thermoelectric (TE) properties of a semiconductor nanowire (NW) network, we propose a theoretical approach mapping the TE network on a two-port network. In contrast to a conventional single-port (i.e., resistor) network model, our model allows for large scale calculations showing convergence of TE figure of merit, ZT, with an increasing number of junctions. Using this model, numerical simulations are performed for the Bi2Te3 branched nanowire (BNW) and Cayley tree NW (CTNW) network. We find that the phonon scattering at the network junctions plays a dominant role in enhancing the network ZT. Specifically, disordered BNW and CTNW demonstrate an order of magnitude higher ZT enhancement compared to their ordered counterparts. Formation of preferential TE pathways in CTNW makes the network effectively behave as its BNW counterpart. We provide formalism for simulating large scale nanowire networks hinged upon experimentally measurable TE parameters of a single T-junction.

  18. Unlocking the Origin of Superior Performance of a Si-Ge Core-Shell Nanowire Quantum Dot Field Effect Transistor.

    Science.gov (United States)

    Dhungana, Kamal B; Jaishi, Meghnath; Pati, Ranjit

    2016-07-13

    The sustained advancement in semiconducting core-shell nanowire technology has unlocked a tantalizing route for making next generation field effect transistor (FET). Understanding how to control carrier mobility of these nanowire channels by applying a gate field is the key to developing a high performance FET. Herein, we have identified the switching mechanism responsible for the superior performance of a Si-Ge core-shell nanowire quantum dot FET over its homogeneous Si counterpart. A quantum transport approach is used to investigate the gate-field modulated switching behavior in electronic current for ultranarrow Si and Si-Ge core-shell nanowire quantum dot FETs. Our calculations reveal that for the ON state, the gate-field induced transverse localization of the wave function restricts the carrier transport to the outer (shell) layer with the pz orbitals providing the pathway for tunneling of electrons in the channels. The higher ON state current in the Si-Ge core-shell nanowire FET is attributed to the pz orbitals that are distributed over the entire channel; in the case of Si nanowire, the participating pz orbital is restricted to a few Si atoms in the channel resulting in a smaller tunneling current. Within the gate bias range considered here, the transconductance is found to be substantially higher in the case of a Si-Ge core-shell nanowire FET than in a Si nanowire FET, which suggests a much higher mobility in the Si-Ge nanowire device.

  19. Rare earth silicide nanowires on silicon surfaces

    Energy Technology Data Exchange (ETDEWEB)

    Wanke, Martina

    2008-11-10

    The growth, structure and electronic properties of rare earth silicide nanowires are investigated on planar and vicinal Si(001) und Si(111) surfaces with scanning tunneling microscopy (STM), low energy electron diffraction (LEED) and angle-resolved photoelectron spectroscopy (ARPES). On all surfaces investigated within this work hexagonal disilicides are grown epitaxially with a lattice mismatch of -2.55% up to +0.83% along the hexagonal a-axis. Along the hexagonal c-axis the lattice mismatch is essentially larger with 6.5%. On the Si(001)2 x 1 surface two types of nanowires are grown epitaxially. The socalled broad wires show a one-dimensional metallic valence band structure with states crossing the Fermi level. Along the nanowires two strongly dispersing states at the anti J point and a strongly dispersing state at the anti {gamma} point can be observed. Along the thin nanowires dispersing states could not be observed. Merely in the direction perpendicular to the wires an intensity variation could be observed, which corresponds to the observed spacial structure of the thin nanowires. The electronic properties of the broad erbium silicide nanowires are very similar to the broad dysprosium silicide nanowires. The electronic properties of the DySi{sub 2}-monolayer and the Dy{sub 3}Si{sub 5}-multilayer on the Si(111) surface are investigated in comparison to the known ErSi{sub 2}/Si(111) and Er{sub 3}Si{sub 5}/Si(111) system. The positions and the energetic locations of the observed band in the surface Brillouin zone will be confirmed for dysprosium. The shape of the electron pockets in the (vector)k {sub parallel} space is elliptical at the anti M points, while the hole pocket at the anti {gamma} point is showing a hexagonal symmetry. On the Si(557) surface the structural and electronic properties depend strongly on the different preparation conditions likewise, in particular on the rare earth coverage. At submonolayer coverage the thin nanowires grow in wide areas

  20. Nanowire Electrodes for Advanced Lithium Batteries

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Lei; Wei, Qiulong; Sun, Ruimin; Mai, Liqiang, E-mail: mlq518@whut.edu.cn [State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, WUT-Harvard Joint Nano Key Laboratory, Wuhan University of Technology, Wuhan (China)

    2014-10-27

    Since the commercialization of lithium ion batteries (LIBs) in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism need to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate that the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reaction limit the cycling performance of LIBs. Based on the in situ observations, some feasible optimization strategies, including prelithiation, coaxial structure, nanowire arrays, and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some “beyond Li-ion” batteries, such as Li-S and Li-air batteries are also described.

  1. Nanowire Electrodes for Advanced Lithium Batteries

    Directory of Open Access Journals (Sweden)

    Lei eHuang

    2014-10-01

    Full Text Available Since the commercialization of lithium ion batteries (LIBs in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism needs to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reactions which limit the cycling performance of LIBs. Based on the in situ observations, some feasible structure architecture strategies, including prelithiation, coaxial structure, nanowire arrays and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some beyond Li-ion batteries, such as Li-S and Li-air battery, are also described.

  2. Nanowire Electrodes for Advanced Lithium Batteries

    International Nuclear Information System (INIS)

    Huang, Lei; Wei, Qiulong; Sun, Ruimin; Mai, Liqiang

    2014-01-01

    Since the commercialization of lithium ion batteries (LIBs) in the past two decades, rechargeable LIBs have become widespread power sources for portable devices used in daily life. However, current demands require higher energy density and power density of batteries. The electrochemical energy storage performance of LIBs could be improved by applying nanomaterial electrodes, but their fast capacity fading is still one of the key limitations and the mechanism need to be clearly understood. Single nanowire electrode devices are considered as a versatile platform for in situ probing the direct relationship between electrical transport, structure change, and other properties of the single nanowire electrode along with the charge/discharge process. The results indicate that the conductivity decrease of the nanowire electrode and the structural disorder/destruction during electrochemical reaction limit the cycling performance of LIBs. Based on the in situ observations, some feasible optimization strategies, including prelithiation, coaxial structure, nanowire arrays, and hierarchical structure architecture, are proposed and utilized to restrain the conductivity decrease and structural disorder/destruction. Further, the applications of nanowire electrodes in some “beyond Li-ion” batteries, such as Li-S and Li-air batteries are also described.

  3. Atomic-Resolution Spectrum Imaging of Semiconductor Nanowires.

    Science.gov (United States)

    Zamani, Reza R; Hage, Fredrik S; Lehmann, Sebastian; Ramasse, Quentin M; Dick, Kimberly A

    2018-03-14

    Over the past decade, III-V heterostructure nanowires have attracted a surge of attention for their application in novel semiconductor devices such as tunneling field-effect transistors (TFETs). The functionality of such devices critically depends on the specific atomic arrangement at the semiconductor heterointerfaces. However, most of the currently available characterization techniques lack sufficient spatial resolution to provide local information on the atomic structure and composition of these interfaces. Atomic-resolution spectrum imaging by means of electron energy-loss spectroscopy (EELS) in the scanning transmission electron microscope (STEM) is a powerful technique with the potential to resolve structure and chemical composition with sub-angstrom spatial resolution and to provide localized information about the physical properties of the material at the atomic scale. Here, we demonstrate the use of atomic-resolution EELS to understand the interface atomic arrangement in three-dimensional heterostructures in semiconductor nanowires. We observed that the radial interfaces of GaSb-InAs heterostructure nanowires are atomically abrupt, while the axial interface in contrast consists of an interfacial region where intermixing of the two compounds occurs over an extended spatial region. The local atomic configuration affects the band alignment at the interface and, hence, the charge transport properties of devices such as GaSb-InAs nanowire TFETs. STEM-EELS thus represents a very promising technique for understanding nanowire physical properties, such as differing electrical behavior across the radial and axial heterointerfaces of GaSb-InAs nanowires for TFET applications.

  4. GaN Nanowires Synthesized by Electroless Etching Method

    KAUST Repository

    Najar, Adel; Anjum, Dalaver H.; Ng, Tien Khee; Ooi, Boon S.; Ben Slimane, Ahmed

    2012-01-01

    Ultra-long Gallium Nitride Nanowires is synthesized via metal-electroless etching method. The morphologies and optical properties of GaN NWs show a single crystal GaN with hexagonal Wurtzite structure and high luminescence properties.

  5. Interaction Driven Interband Tunneling of Bosons in the Triple Well

    OpenAIRE

    Cao, Lushuai; Brouzos, Ioannis; Zöllner, Sascha; Schmelcher, Peter

    2010-01-01

    We study the tunneling of a small ensemble of strongly repulsive bosons in a one-dimensional triple-well potential. The usual treatment within the single-band approximation suggests suppression of tunneling in the strong interaction regime. However, we show that several windows of enhanced tunneling are opened in this regime. This enhanced tunneling results from higher band contributions, and has the character of interband tunneling. It can give rise to various tunneling processes, such as si...

  6. Self-Assembled PbSe Nanowire:Perovskite Hybrids

    KAUST Repository

    Yang, Zhenyu

    2015-12-02

    © 2015 American Chemical Society. Inorganic semiconductor nanowires are of interest in nano- and microscale photonic and electronic applications. Here we report the formation of PbSe nanowires based on directional quantum dot alignment and fusion regulated by hybrid organic-inorganic perovskite surface ligands. All material synthesis is carried out at mild temperatures. Passivation of PbSe quantum dots was achieved via a new perovskite ligand exchange. Subsequent in situ ammonium/amine substitution by butylamine enables quantum dots to be capped by butylammonium lead iodide, and this further drives the formation of a PbSe nanowire superlattice in a two-dimensional (2D) perovskite matrix. The average spacing between two adjacent nanowires agrees well with the thickness of single atomic layer of 2D perovskite, consistent with the formation of a new self-assembled semiconductor nanowire:perovskite heterocrystal hybrid.

  7. Self-Assembled PbSe Nanowire:Perovskite Hybrids

    KAUST Repository

    Yang, Zhenyu; Yassitepe, Emre; Voznyy, Oleksandr; Janmohamed, Alyf; Lan, Xinzheng; Levina, Larissa; Comin, Riccardo; Sargent, Edward H.

    2015-01-01

    © 2015 American Chemical Society. Inorganic semiconductor nanowires are of interest in nano- and microscale photonic and electronic applications. Here we report the formation of PbSe nanowires based on directional quantum dot alignment and fusion regulated by hybrid organic-inorganic perovskite surface ligands. All material synthesis is carried out at mild temperatures. Passivation of PbSe quantum dots was achieved via a new perovskite ligand exchange. Subsequent in situ ammonium/amine substitution by butylamine enables quantum dots to be capped by butylammonium lead iodide, and this further drives the formation of a PbSe nanowire superlattice in a two-dimensional (2D) perovskite matrix. The average spacing between two adjacent nanowires agrees well with the thickness of single atomic layer of 2D perovskite, consistent with the formation of a new self-assembled semiconductor nanowire:perovskite heterocrystal hybrid.

  8. Atomic characterization of Au clusters in vapor-liquid-solid grown silicon nanowires

    International Nuclear Information System (INIS)

    Chen, Wanghua; Roca i Cabarrocas, Pere; Pareige, Philippe; Castro, Celia; Xu, Tao; Grandidier, Bruno; Stiévenard, Didier

    2015-01-01

    By correlating atom probe tomography with other conventional microscope techniques (scanning electron microscope, scanning transmission electron microscope, and scanning tunneling microscopy), the distribution and composition of Au clusters in individual vapor-liquid-solid grown Si nanowires is investigated. Taking advantage of the characteristics of atom probe tomography, we have developed a sample preparation method by inclining the sample at certain angle to characterize the nanowire sidewall without using focused ion beam. With three-dimensional atomic scale reconstruction, we provide direct evidence of Au clusters tending to remain on the nanowire sidewall rather than being incorporated into the Si nanowires. Based on the composition measurement of Au clusters (28% ± 1%), we have demonstrated the supersaturation of Si atoms in Au clusters, which supports the hypothesis that Au clusters are formed simultaneously during nanowire growth rather than during the cooling process

  9. Atomic characterization of Au clusters in vapor-liquid-solid grown silicon nanowires

    Energy Technology Data Exchange (ETDEWEB)

    Chen, Wanghua; Roca i Cabarrocas, Pere [Laboratoire de Physique des Interfaces et Couches Minces (LPICM), UMR 7647, CNRS, Ecole Polytechnique, 91128 Palaiseau (France); Pareige, Philippe; Castro, Celia [Groupe de Physique des Matériaux (GPM), Université et INSA de Rouen, UMR 6634, CNRS, Av. de l' Université, BP 12, 76801 Saint Etienne du Rouvray (France); Xu, Tao; Grandidier, Bruno; Stiévenard, Didier [Institut d' Electronique et de Microélectronique et de Nanotechnologies (IEMN), UMR 8520, CNRS, Département ISEN, 41 bd Vauban, 59046 Lille Cedex (France)

    2015-09-14

    By correlating atom probe tomography with other conventional microscope techniques (scanning electron microscope, scanning transmission electron microscope, and scanning tunneling microscopy), the distribution and composition of Au clusters in individual vapor-liquid-solid grown Si nanowires is investigated. Taking advantage of the characteristics of atom probe tomography, we have developed a sample preparation method by inclining the sample at certain angle to characterize the nanowire sidewall without using focused ion beam. With three-dimensional atomic scale reconstruction, we provide direct evidence of Au clusters tending to remain on the nanowire sidewall rather than being incorporated into the Si nanowires. Based on the composition measurement of Au clusters (28% ± 1%), we have demonstrated the supersaturation of Si atoms in Au clusters, which supports the hypothesis that Au clusters are formed simultaneously during nanowire growth rather than during the cooling process.

  10. Self-organized patterns along sidewalls of iron silicide nanowires on Si(110) and their origin

    Energy Technology Data Exchange (ETDEWEB)

    Das, Debolina; Mahato, J. C.; Bisi, Bhaskar; Dev, B. N., E-mail: msbnd@iacs.res.in [Department of Materials Science, Indian Association for the Cultivation of Science, Kolkata 700032 (India); Satpati, B. [Surface Physics and Material Science Division, Saha Institute of Nuclear Physics, 1/AF Bidhannagar, Kolkata 700064 (India)

    2014-11-10

    Iron silicide (cubic FeSi{sub 2}) nanowires have been grown on Si(110) by reactive deposition epitaxy and investigated by scanning tunneling microscopy and scanning/transmission electron microscopy. On an otherwise uniform nanowire, a semi-periodic pattern along the edges of FeSi{sub 2} nanowires has been discovered. The origin of such growth patterns has been traced to initial growth of silicide nanodots with a pyramidal Si base at the chevron-like atomic arrangement of a clean reconstructed Si(110) surface. The pyramidal base evolves into a comb-like structure along the edges of the nanowires. This causes the semi-periodic structure of the iron silicide nanowires along their edges.

  11. Global optimization of silicon nanowires for efficient parametric processes

    DEFF Research Database (Denmark)

    Vukovic, Dragana; Xu, Jing; Mørk, Jesper

    2013-01-01

    We present a global optimization of silicon nanowires for parametric single-pump mixing. For the first time, the effect of surface roughness-induced loss is included in the analysis, significantly influencing the optimum waveguide dimensions.......We present a global optimization of silicon nanowires for parametric single-pump mixing. For the first time, the effect of surface roughness-induced loss is included in the analysis, significantly influencing the optimum waveguide dimensions....

  12. Selective scanning tunnelling microscope electron-induced reactions of single biphenyl molecules on a Si(100) surface.

    Science.gov (United States)

    Riedel, Damien; Bocquet, Marie-Laure; Lesnard, Hervé; Lastapis, Mathieu; Lorente, Nicolas; Sonnet, Philippe; Dujardin, Gérald

    2009-06-03

    Selective electron-induced reactions of individual biphenyl molecules adsorbed in their weakly chemisorbed configuration on a Si(100) surface are investigated by using the tip of a low-temperature (5 K) scanning tunnelling microscope (STM) as an atomic size source of electrons. Selected types of molecular reactions are produced, depending on the polarity of the surface voltage during STM excitation. At negative surface voltages, the biphenyl molecule diffuses across the surface in its weakly chemisorbed configuration. At positive surface voltages, different types of molecular reactions are activated, which involve the change of adsorption configuration from the weakly chemisorbed to the strongly chemisorbed bistable and quadristable configurations. Calculated reaction pathways of the molecular reactions on the silicon surface, using the nudge elastic band method, provide evidence that the observed selectivity as a function of the surface voltage polarity cannot be ascribed to different activation energies. These results, together with the measured threshold surface voltages and the calculated molecular electronic structures via density functional theory, suggest that the electron-induced molecular reactions are driven by selective electron detachment (oxidation) or attachment (reduction) processes.

  13. Large room-temperature tunneling anisotropic magnetoresistance and electroresistance in single ferromagnet/Nb:SrTiO3 Schottky devices.

    Science.gov (United States)

    Kamerbeek, Alexander M; Ruiter, Roald; Banerjee, Tamalika

    2018-01-22

    There is a large effort in research and development to realize electronic devices capable of storing information in new ways - for instance devices which simultaneously exhibit electro and magnetoresistance. However it remains a challenge to create devices in which both effects coexist. In this work we show that the well-known electroresistance in noble metal-Nb:SrTiO 3 Schottky junctions can be augmented by a magnetoresistance effect in the same junction. This is realized by replacing the noble metal electrode with ferromagnetic Co. This magnetoresistance manifests as a room temperature tunneling anisotropic magnetoresistance (TAMR). The maximum room temperature TAMR (1.6%) is significantly larger and robuster with bias than observed earlier, not using Nb:SrTiO 3 . In a different set of devices, a thin amorphous AlO x interlayer inserted between Co and Nb:SrTiO 3 , reduces the TAMR by more than 2 orders of magnitude. This points to the importance of intimate contact between the Co and Nb:SrTiO 3 for the TAMR effect. This is explained by electric field enhanced spin-orbit coupling of the interfacial Co layer in contact with Nb:SrTiO 3 . We propose that the large TAMR likely has its origin in the 3d orbital derived conduction band and large relative permittivity of Nb:SrTiO 3 and discuss ways to further enhance the TAMR.

  14. Atomic structure of self-organizing iridium induced nanowires on Ge(001)

    Energy Technology Data Exchange (ETDEWEB)

    Kabanov, N.S., E-mail: n.kabanov@utwente.nl [Faculty of Physics, Moscow State University, 119991 (Russian Federation); Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P. O. Box 217, Enschede 7500 AE (Netherlands); Heimbuch, R.; Zandvliet, H.J.W. [Physics of Interfaces and Nanomaterials, MESA+ Institute for Nanotechnology, University of Twente, P. O. Box 217, Enschede 7500 AE (Netherlands); Saletsky, A.M.; Klavsyuk, A.L. [Faculty of Physics, Moscow State University, 119991 (Russian Federation)

    2017-05-15

    Highlights: • Ir/Ge(001) structure has been studied with DFT calculations and scanning tunneling microscopy. • Ir/Ge(001) nanowires are composed of Ge atoms and Ir atoms are located in subsurface positions. • The regions in the vicinity of the nanowires are very dynamic, even at temperatures as low as 77 K. - Abstract: The atomic structure of self-organizing iridium (Ir) induced nanowires on Ge(001) is studied by density functional theory (DFT) calculations and variable-temperature scanning tunneling microscopy. The Ir induced nanowires are aligned in a direction perpendicular to the Ge(001) substrate dimer rows, have a width of two atoms and are completely kink-less. Density functional theory calculations show that the Ir atoms prefer to dive into the Ge(001) substrate and push up the neighboring Ge substrate atoms. The nanowires are composed of Ge atoms and not Ir atoms as previously assumed. The regions in the vicinity of the nanowires are very dynamic, even at temperatures as low as 77 K. Time-resolved scanning tunneling microscopy measurements reveal that this dynamics is caused by buckled Ge substrate dimers that flip back and forth between their two buckled configurations.

  15. Voltammetry and single-molecule in situ scanning tunneling microscopy of laccases and bilirubin oxidase in electrocatalytic dioxygen reduction on Au(111) single-crystal electrodes

    DEFF Research Database (Denmark)

    Climent, Victor; Zhang, Jingdong; Friis, Esben Peter

    2012-01-01

    Laccases (E.C. 1.10.3.2) are multicopper oxidases catalytically active in the oxidation of diphenolics and related compounds by molecular dioxygen. The laccases contain a single-copper type I center and a trinuclear cluster of a single-copper type II and a dinuclear type III center. The oxidation...

  16. Oriented epitaxial TiO2 nanowires for water splitting

    Science.gov (United States)

    Hou, Wenting; Cortez, Pablo; Wuhrer, Richard; Macartney, Sam; Bozhilov, Krassimir N.; Liu, Rong; Sheppard, Leigh R.; Kisailus, David

    2017-06-01

    Highly oriented epitaxial rutile titanium dioxide (TiO2) nanowire arrays have been hydrothermally grown on polycrystalline TiO2 templates with their orientation dependent on the underlying TiO2 grain. Both the diameter and areal density of the nanowires were tuned by controlling the precursor concentration, and the template surface energy and roughness. Nanowire tip sharpness was influenced by precursor solubility and diffusivity. A new secondary ion mass spectrometer technique has been developed to install additional nucleation sites in single crystal TiO2 templates and the effect on nanowire growth was probed. Using the acquired TiO2 nanowire synthesis knowhow, an assortment of nanowire arrays were installed upon the surface of undoped TiO2 photo-electrodes and assessed for their photo-electrochemical water splitting performance. The key result obtained was that the presence of short and dispersed nanowire arrays significantly improved the photocurrent when the illumination intensity was increased from 100 to 200 mW cm-2. This is attributed to the alignment of the homoepitaxially grown nanowires to the [001] direction, which provides the fastest charge transport in TiO2 and an improved pathway for photo-holes to find water molecules and undertake oxidation. This result lays a foundation for achieving efficient water splitting under conditions of concentrated solar illumination.

  17. Quantum transport in nanowire-based hybrid devices

    Energy Technology Data Exchange (ETDEWEB)

    Guenel, Haci Yusuf

    2013-05-08

    the Andreev reflection of quasiparticles at single interface, by suppressing the superconductivity of Al with small magnetic fields, as well as at double interface for zero magnetic field. The junction geometry was further changed by replacing the InAs nanowire with the InAs tube. In this case the GaAs/InAs core/shell tubular nanowires were contacted by two superconducting Nb electrodes. For this junction geometry we have demonstrated the interference of phase conjugated electron-hole pairs in the presence of coaxial magnetic. The effect of temperature, constant dc bias current and gate voltage on the magnetoresistance oscillations were examined. In the last part of this thesis, we have fabricated and characterized the single crystal Au nanowire-based proximity superconducting quantum interference device (SQUID).

  18. Nanowire Photovoltaic Devices

    Science.gov (United States)

    Forbes, David

    2015-01-01

    Firefly Technologies, in collaboration with the Rochester Institute of Technology and the University of Wisconsin-Madison, developed synthesis methods for highly strained nanowires. Two synthesis routes resulted in successful nanowire epitaxy: direct nucleation and growth on the substrate and a novel selective-epitaxy route based on nanolithography using diblock copolymers. The indium-arsenide (InAs) nanowires are implemented in situ within the epitaxy environment-a significant innovation relative to conventional semiconductor nanowire generation using ex situ gold nanoparticles. The introduction of these nanoscale features may enable an intermediate band solar cell while simultaneously increasing the effective absorption volume that can otherwise limit short-circuit current generated by thin quantized layers. The use of nanowires for photovoltaics decouples the absorption process from the current extraction process by virtue of the high aspect ratio. While no functional solar cells resulted from this effort, considerable fundamental understanding of the nanowire epitaxy kinetics and nanopatterning process was developed. This approach could, in principle, be an enabling technology for heterointegration of dissimilar materials. The technology also is applicable to virtual substrates. Incorporating nanowires onto a recrystallized germanium/metal foil substrate would potentially solve the problem of grain boundary shunting of generated carriers by restricting the cross-sectional area of the nanowire (tens of nanometers in diameter) to sizes smaller than the recrystallized grains (0.5 to 1 micron(exp 2).

  19. Functionalised Silver Nanowire Structures

    International Nuclear Information System (INIS)

    Andrew, Piers; Ilie, Adelina

    2007-01-01

    Crystalline silver nanowires 60-100 nm in diameter and tens of micrometres in length have been fabricated using a low temperature, solution synthesis technique. We explore the potential of this method to produce functional nanowire structures using two different strategies to attach active molecules to the nanowires: adsorption and displacement. Initially, as-produced silver nanowires capped with a uniaxial-growth-inducing polymer layer were functionalised by solution adsorption of a semiconducting conjugated polymer to generate fluorescent nanowire structures. The influence of nanowire surface chemistry was investigated by displacing the capping polymer with an alkanethiol self-assembled monolayer, followed by solution adsorption functionalisation. The success of molecular attachment was monitored by electron microscopy, absorption and fluorescence spectroscopy and confocal fluorescence microscopy. We examined how the optical properties of such adsorbed molecules are affected by the metallic nanowires, and observed transfer of excitation energy between dye molecules mediated by surface plasmons propagating on the nanowires. Non-contact dynamic force microscopy measurements were used to map the work-function of individual wires, revealing inhomogeneity of the polymer surface coverage

  20. Stability of Organic Nanowires

    DEFF Research Database (Denmark)

    Balzer, F.; Schiek, M.; Wallmann, I.

    2011-01-01

    The morphological stability of organic nanowires over time and under thermal load is of major importance for their use in any device. In this study the growth and stability of organic nanowires from a naphthyl end-capped thiophene grown by organic molecular beam deposition is investigated via ato...