Universal quantum gates on electron-spin qubits with quantum dots inside single-side optical microcavities.

Science.gov (United States)

Wei, Hai-Rui; Deng, Fu-Guo

2014-01-13

We present some compact quantum circuits for a deterministic quantum computing on electron-spin qubits assisted by quantum dots inside single-side optical microcavities, including the CNOT, Toffoli, and Fredkin gates. They are constructed by exploiting the giant optical Faraday rotation induced by a single-electron spin in a quantum dot inside a single-side optical microcavity as a result of cavity quantum electrodynamics. Our universal quantum gates have some advantages. First, all the gates are accomplished with a success probability of 100% in principle. Second, our schemes require no additional electron-spin qubits and they are achieved by some input-output processes of a single photon. Third, our circuits for these gates are simple and economic. Moreover, our devices for these gates work in both the weak coupling and the strong coupling regimes, and they are feasible in experiment.

Efficient controlled-phase gate for single-spin qubits in quantum dots

NARCIS (Netherlands)

Meunier, T.; Calado, V.E.; Vandersypen, L.M.K.

2011-01-01

Two-qubit interactions are at the heart of quantum information processing. For single-spin qubits in semiconductor quantum dots, the exchange gate has always been considered the natural two-qubit gate. The recent integration of a magnetic field or g-factor gradients in coupled quantum dot systems

Control of electrochemical signals from quantum dots conjugated to organic materials by using DNA structure in an analog logic gate.

Science.gov (United States)

Chen, Qi; Yoo, Si-Youl; Chung, Yong-Ho; Lee, Ji-Young; Min, Junhong; Choi, Jeong-Woo

2016-10-01

Various bio-logic gates have been studied intensively to overcome the rigidity of single-function silicon-based logic devices arising from combinations of various gates. Here, a simple control tool using electrochemical signals from quantum dots (QDs) was constructed using DNA and organic materials for multiple logic functions. The electrochemical redox current generated from QDs was controlled by the DNA structure. DNA structure, in turn, was dependent on the components (organic materials) and the input signal (pH). Independent electrochemical signals from two different logic units containing QDs were merged into a single analog-type logic gate, which was controlled by two inputs. We applied this electrochemical biodevice to a simple logic system and achieved various logic functions from the controlled pH input sets. This could be further improved by choosing QDs, ionic conditions, or DNA sequences. This research provides a feasible method for fabricating an artificial intelligence system. Copyright © 2016 Elsevier B.V. All rights reserved.

A single nano cantilever as a reprogrammable universal logic gate

International Nuclear Information System (INIS)

Chappanda, K N; Ilyas, S; Kazmi, S N R; Younis, M I; Holguin-Lerma, J; Batra, N M; Costa, P M F J

2017-01-01

The current transistor-based computing circuits use multiple interconnected transistors to realize a single Boolean logic gate. This leads to higher power requirements and delayed computing. Transistors are not suitable for applications in harsh environments and require complicated thermal management systems due to excessive heat dissipation. Also, transistor circuits lack the ability to dynamically reconfigure their functionality in real time, which is desirable for enhanced computing capability. Further, the miniaturization of transistors to improve computational power is reaching its ultimate physical limits. As a step towards overcoming the limitations of transistor-based computing, here we demonstrate a reprogrammable universal Boolean logic gate based on a nanoelectromechanical cantilever (NC) oscillator. The fundamental XOR, AND, NOR, OR and NOT logic gates are condensed in a single NC, thereby reducing electrical interconnects between devices. The device is dynamically switchable between any logic gates at the same drive frequency without the need for any change in the circuit. It is demonstrated to operate at elevated temperatures minimizing the need for thermal management systems. It has a tunable bandwidth of 5 MHz enabling parallel and dynamically reconfigurable logic device for enhanced computing. (paper)

A single nano cantilever as a reprogrammable universal logic gate

KAUST Repository

Chappanda, K. N.

2017-02-24

The current transistor-based computing circuits use multiple interconnected transistors to realize a single Boolean logic gate. This leads to higher power requirements and delayed computing. Transistors are not suitable for applications in harsh environments and require complicated thermal management systems due to excessive heat dissipation. Also, transistor circuits lack the ability to dynamically reconfigure their functionality in real time, which is desirable for enhanced computing capability. Further, the miniaturization of transistors to improve computational power is reaching its ultimate physical limits. As a step towards overcoming the limitations of transistor-based computing, here we demonstrate a reprogrammable universal Boolean logic gate based on a nanoelectromechanical cantilever (NC) oscillator. The fundamental XOR, AND, NOR, OR and NOT logic gates are condensed in a single NC, thereby reducing electrical interconnects between devices. The device is dynamically switchable between any logic gates at the same drive frequency without the need for any change in the circuit. It is demonstrated to operate at elevated temperatures minimizing the need for thermal management systems. It has a tunable bandwidth of 5 MHz enabling parallel and dynamically reconfigurable logic device for enhanced computing.

Assessment of left ventricular function by electrocardiogram-gated myocardial single photon emission computed tomography using quantitative gated single photon emission computed tomography software

International Nuclear Information System (INIS)

Morita, Koichi; Adachi, Itaru; Konno, Masanori

1999-01-01

Electrocardiogram (ECG)-gated myocardial single photon emission computed tomography (SPECT) can assess left ventricular (LV) perfusion and function easily using quantitative gated SPECT (QGS) software. ECG-gated SPECT was performed in 44 patients with coronary artery disease under post-stress and resting conditions to assess the values of LV functional parameters, by comparison to LV ejection fraction derived from gated blood pool scan and myocardial characteristics. A good correlation was obtained between ejection fraction using QGS and that using cardiac blood pool scan (r=0.812). Some patients with myocardial ischemia had lower ejection fraction under post-stress compared to resting conditions, indicating post-stress LV dysfunction. LV wall motion and wall thickening were significantly impaired in ischemic and infarcted myocardium, and the degree of abnormality in the infarcted areas was greater than in the ischemia area. LV functional parameters derived using QGS were useful to assess post-stress LV dysfunction and myocardial viability. In conclusion, ECG-gated myocardial SPECT permits simultaneous quantitative assessment of myocardial perfusion and function. (author)

Experimental study of single event burnout and single event gate rupture in power MOSFETs and IGBT

International Nuclear Information System (INIS)

Tang Benqi; Wang Yanping; Geng Bin

2001-01-01

An experimental study was carried out to determine the single event burnout and single event gate rupture sensitivities in power MOSFETs and IGBT which were exposed to heavy ions from 252 Cf source. The test method, test results, a description of observed burnout current waveforms and a discussion of a possible failure mechanism were presented. Current measurements have been performed with a specially designed circuit. The test results include the observed dependence upon applied drain or gate to source bias and versus with external capacitors and limited resistors

Design and optimization analysis of dual material gate on DG-IMOS

Science.gov (United States)

Singh, Sarabdeep; Raman, Ashish; Kumar, Naveen

2017-12-01

An impact ionization MOSFET (IMOS) is evolved for overcoming the constraint of less than 60 mV/decade sub-threshold slope (SS) of conventional MOSFET at room temperature. In this work, first, the device performance of the p-type double gate impact ionization MOSFET (DG-IMOS) is optimized by adjusting the device design parameters. The adjusted parameters are ratio of gate and intrinsic length, gate dielectric thickness and gate work function. Secondly, the DMG (dual material gate) DG-IMOS is proposed and investigated. This DMG DG-IMOS is further optimized to obtain the best possible performance parameters. Simulation results reveal that DMG DG-IMOS when compared to DG-IMOS, shows better I ON, I ON/I OFF ratio, and RF parameters. Results show that by properly tuning the lengths of two materials at a ratio of 1.5 in DMG DG-IMOS, optimized performance is achieved including I ON/I OFF ratio of 2.87 × 109 A/μm with I ON as 11.87 × 10-4 A/μm and transconductance of 1.06 × 10-3 S/μm. It is analyzed that length of drain side material should be greater than the length of source side material to attain the higher transconductance in DMG DG-IMOS.

Simulation of a quantum NOT gate for a single qutrit system

Indian Academy of Sciences (India)

In order to achieve a quantum NOT gate for a single qutrit, the respective Schrödinger equation is solved numerically within a two-photon rotating wave approximation. For small values of one-photon detuning, there appear decoherence effects. Meanwhile, for large values of onephoton detuning, an ideal quantum NOT gate ...

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs

International Nuclear Information System (INIS)

Li Cong; Zhuang Yi-Qi; Zhang Li; Jin Gang

2014-01-01

A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate (JLDMCSG) metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed. It is derived by solving the two-dimensional Poisson's equation in two continuous cylindrical regions with any simplifying assumption. Using this analytical model, the subthreshold characteristics of JLDMCSG MOSFETs are investigated in terms of channel electrostatic potential, horizontal electric field, and subthreshold current. Compared to junctionless single-material cylindrical surrounding-gate MOSFETs, JLDMCSG MOSFETs can effectively suppress short-channel effects and simultaneously improve carrier transport efficiency. It is found that the subthreshold current of JLDMCSG MOSFETs can be significantly reduced by adopting both a thin oxide and thin silicon channel. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical simulator ISE TCAD

Dopant induced single electron tunneling within the sub-bands of single silicon NW tri-gate junctionless n-MOSFET

Science.gov (United States)

Uddin, Wasi; Georgiev, Yordan M.; Maity, Sarmistha; Das, Samaresh

2017-09-01

We report 1D electron transport of silicon junctionless tri-gate n-type transistor at 4.2 K. The step like curve observed in the current voltage characteristic suggests 1D transport. Besides the current steps for 1D transport, we found multiple spikes within individual steps, which we relate to inter-band single electron tunneling, mediated by the charged dopants available in the channel region. Clear Coulomb diamonds were observed in the stability diagram of the device. It is shown that a uniformly doped silicon nanowire can provide us the window for the single electron tunnelling. Back-gate versus front-gate color plot, where current is in a color scale, shows a crossover of the increased conduction region. This is a clear indication of the dopant-dopant interaction. It has been shown that back-gate biasing can be used to tune the coupling strength between the dopants.

The Microwave Noise Behaviour Of Dual Material Gate Silicon On Insulator

Science.gov (United States)

Jafar, N.; Soin, N.

2009-06-01

This work presents the noise behaviour due to the applied Dual Material Gate (DMG) on the 75 nm n-channel Silicon On Insulator (SOI) device operating in the fully depletion mode, particularly for microwave circuit design. Influences of DMG properties namely the gate length ratio (L1:L2) and gate material workfunction difference (ΔΦM) as well as structural and operational parameters which are silicon thickness (TSi) and threshold voltage (VTH) setting variation on the noise performance were carried out on simulation basis using ATLAS 2D. Results show better noise performance in DMG as compare to the standard gate structure of FD-SOI devices. Higher VTH for DMG design is recommended for minimized noise figure in line with the advantage of inverse VTH roll-off characteristics for short channel effects suppression.

GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications

Energy Technology Data Exchange (ETDEWEB)

None

2011-07-31

This report summarizes the accomplishments of the UAB GATE Center of Excellence in Lightweight Materials for Automotive Applications. The first Phase of the UAB DOE GATE center spanned the period 2005-2011. The UAB GATE goals coordinated with the overall goals of DOE's FreedomCAR and Vehicles Technologies initiative and DOE GATE program. The FCVT goals are: (1) Development and validation of advanced materials and manufacturing technologies to significantly reduce automotive vehicle body and chassis weight without compromising other attributes such as safety, performance, recyclability, and cost; (2) To provide a new generation of engineers and scientists with knowledge and skills in advanced automotive technologies. The UAB GATE focused on both the FCVT and GATE goals in the following manner: (1) Train and produce graduates in lightweight automotive materials technologies; (2) Structure the engineering curricula to produce specialists in the automotive area; (3) Leverage automotive related industry in the State of Alabama; (4) Expose minority students to advanced technologies early in their career; (5) Develop innovative virtual classroom capabilities tied to real manufacturing operations; and (6) Integrate synergistic, multi-departmental activities to produce new product and manufacturing technologies for more damage tolerant, cost-effective, and lighter automotive structures.

Memory effect in silicon time-gated single-photon avalanche diodes

International Nuclear Information System (INIS)

Dalla Mora, A.; Contini, D.; Di Sieno, L.; Tosi, A.; Boso, G.; Villa, F.; Pifferi, A.

2015-01-01

We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons

Memory effect in silicon time-gated single-photon avalanche diodes

Energy Technology Data Exchange (ETDEWEB)

Dalla Mora, A.; Contini, D., E-mail: davide.contini@polimi.it; Di Sieno, L. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Tosi, A.; Boso, G.; Villa, F. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Pifferi, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); CNR, Istituto di Fotonica e Nanotecnologie, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

2015-03-21

We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

Materials Fundamentals of Gate Dielectrics

CERN Document Server

Demkov, Alexander A

2006-01-01

This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discont...

Multi-material gate poly-crystalline thin film transistors: Modeling and simulation for an improved gate transport efficiency

International Nuclear Information System (INIS)

Sehgal, Amit; Mangla, Tina; Gupta, Mridula; Gupta, R.S.

2008-01-01

In this work, a two-dimensional potential distribution formulation is presented for multi-material gate poly-crystalline silicon thin film transistors. The developed formulation incorporates the effects due to traps and grain-boundaries. In short-channel devices, short-channel effects and drain-induced barrier lowering (DIBL) effect exists, and are accounted for in the analysis. The work aims at the reduction of DIBL effect and grain-boundary effects i.e. to reduce the potential barriers generated in the channel by employing gate-engineered structures. A study of work-functions and electrode lengths of multi-material gate electrode is done to suppress the potential barriers, hot electron effect and to improve the carrier transport efficiency. Green's function approach is adopted for the two-dimensional potential solution. The results obtained show a good agreement with simulated results, thus, demonstrating the validity of our model

An Updated Perspective of Single Event Gate Rupture and Single Event Burnout in Power MOSFETs

Science.gov (United States)

Titus, Jeffrey L.

2013-06-01

Studies over the past 25 years have shown that heavy ions can trigger catastrophic failure modes in power MOSFETs [e.g., single-event gate rupture (SEGR) and single-event burnout (SEB)]. In 1996, two papers were published in a special issue of the IEEE Transaction on Nuclear Science [Johnson, Palau, Dachs, Galloway and Schrimpf, “A Review of the Techniques Used for Modeling Single-Event Effects in Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 546-560, April. 1996], [Titus and Wheatley, “Experimental Studies of Single-Event Gate Rupture and Burnout in Vertical Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 533-545, Apr. 1996]. Those two papers continue to provide excellent information and references with regard to SEB and SEGR in vertical planar MOSFETs. This paper provides updated references/information and provides an updated perspective of SEB and SEGR in vertical planar MOSFETs as well as provides references/information to other device types that exhibit SEB and SEGR effects.

A novel hetero-material gate-underlap electrically doped TFET for improving DC/RF and ambipolar behaviour

Science.gov (United States)

Yadav, Shivendra; Sharma, Dheeraj; Chandan, Bandi Venkata; Aslam, Mohd; Soni, Deepak; Sharma, Neeraj

2018-05-01

In this article, the impact of gate-underlap with hetero material (low band gap) has been investigated in terms of DC and Analog/RF parameters by proposed device named as hetero material gate-underlap electrically doped TFET (HM-GUL-ED-TFET). Gate-underlap resolves the problem of ambipolarity, gate leakage current (Ig) and slightly improves the gate to drain capacitance, but DC performance is almost unaffected. Further, the use of low band gap material (Si0.5 Ge) in proposed device causes a drastic improvement in the DC as well as RF figures of merit. We have investigated the Si0.5 Ge as a suitable candidate among different low band gap materials. In addition, the sensitivity of gate-underlap in terms of gate to drain inversion and parasitic capacitances has been studied for HM-GUL-ED-TFET. Further, relatively it is observed that gate-underlap is a better way than drain-underlap in the proposed structure to improve Analog/RF performances without degrading the DC parameters of device. Additionally, hetero-junction alignment analysis has been done for fabrication feasibility.

Entangling quantum-logic gate operated with an ultrabright semiconductor single-photon source.

Science.gov (United States)

Gazzano, O; Almeida, M P; Nowak, A K; Portalupi, S L; Lemaître, A; Sagnes, I; White, A G; Senellart, P

2013-06-21

We demonstrate the unambiguous entangling operation of a photonic quantum-logic gate driven by an ultrabright solid-state single-photon source. Indistinguishable single photons emitted by a single semiconductor quantum dot in a micropillar optical cavity are used as target and control qubits. For a source brightness of 0.56 photons per pulse, the measured truth table has an overlap with the ideal case of 68.4±0.5%, increasing to 73.0±1.6% for a source brightness of 0.17 photons per pulse. The gate is entangling: At a source brightness of 0.48, the Bell-state fidelity is above the entangling threshold of 50% and reaches 71.0±3.6% for a source brightness of 0.15.

Performance and Design Considerations of a Novel Dual-Material Gate Carbon Nanotube Field-Effect Transistors: Nonequilibrium Green's Function Approach

Science.gov (United States)

Arefinia, Zahra; Orouji, Ali A.

2009-02-01

The concept of dual-material gate (DMG) is applied to the carbon nanotube field-effect transistor (CNTFET) with doped source and drain extensions, and the features exhibited by the resulting new structure, i.e., the DMG-CNTFET structure, have been examined for the first time by developing a two-dimensional (2D) full quantum simulation. The simulations have been done by the self-consistent solution of 2D Poisson-Schrödinger equations, within the nonequilibrium Green's function (NEGF) formalism. The results show DMG-CNTFET decreases significantly leakage current and drain conductance and increases on-off current ratio and voltage gain as compared to the single material gate counterparts CNTFET. It is seen that short channel effects in this structure are suppressed because of the perceivable step in the surface potential profile, which screens the drain potential. Moreover, these unique features can be controlled by engineering the workfunction and length of the gate metals. Therefore, this work provides an incentive for further experimental exploration.

Ultraclean single, double, and triple carbon nanotube quantum dots with recessed Re bottom gates

Science.gov (United States)

Jung, Minkyung; Schindele, Jens; Nau, Stefan; Weiss, Markus; Baumgartner, Andreas; Schoenenberger, Christian

2014-03-01

Ultraclean carbon nanotubes (CNTs) that are free from disorder provide a promising platform to manipulate single electron or hole spins for quantum information. Here, we demonstrate that ultraclean single, double, and triple quantum dots (QDs) can be formed reliably in a CNT by a straightforward fabrication technique. The QDs are electrostatically defined in the CNT by closely spaced metallic bottom gates deposited in trenches in Silicon dioxide by sputter deposition of Re. The carbon nanotubes are then grown by chemical vapor deposition (CVD) across the trenches and contacted using conventional electron beam lithography. The devices exhibit reproducibly the characteristics of ultraclean QDs behavior even after the subsequent electron beam lithography and chemical processing steps. We demonstrate the high quality using CNT devices with two narrow bottom gates and one global back gate. Tunable by the gate voltages, the device can be operated in four different regimes: i) fully p-type with ballistic transport between the outermost contacts (over a length of 700 nm), ii) clean n-type single QD behavior where a QD can be induced by either the left or the right bottom gate, iii) n-type double QD and iv) triple bipolar QD where the middle QD has opposite doping (p-type). Research at Basel is supported by the NCCR-Nano, NCCR-QIST, ERC project QUEST, and FP7 project SE2ND.

Finger-gate manipulated quantum transport in Dirac materials

International Nuclear Information System (INIS)

Kleftogiannis, Ioannis; Cheng, Shun-Jen; Tang, Chi-Shung

2015-01-01

We investigate the quantum transport properties of multichannel nanoribbons made of materials described by the Dirac equation, under an in-plane magnetic field. In the low energy regime, positive and negative finger-gate potentials allow the electrons to make intra-subband transitions via hole-like or electron-like quasibound states (QBS), respectively, resulting in dips in the conductance. In the high energy regime, double dip structures in the conductance are found, attributed to spin-flip or spin-nonflip inter-subband transitions through the QBSs. Inverting the finger-gate polarity offers the possibility to manipulate the spin polarized electronic transport to achieve a controlled spin-switch. (paper)

Note: Time-gated 3D single quantum dot tracking with simultaneous spinning disk imaging

International Nuclear Information System (INIS)

DeVore, M. S.; Stich, D. G.; Keller, A. M.; Phipps, M. E.; Hollingsworth, J. A.; Goodwin, P. M.; Werner, J. H.; Cleyrat, C.; Lidke, D. S.; Wilson, B. S.

2015-01-01

We describe recent upgrades to a 3D tracking microscope to include simultaneous Nipkow spinning disk imaging and time-gated single-particle tracking (SPT). Simultaneous 3D molecular tracking and spinning disk imaging enable the visualization of cellular structures and proteins around a given fluorescently labeled target molecule. The addition of photon time-gating to the SPT hardware improves signal to noise by discriminating against Raman scattering and short-lived fluorescence. In contrast to camera-based SPT, single-photon arrival times are recorded, enabling time-resolved spectroscopy (e.g., measurement of fluorescence lifetimes and photon correlations) to be performed during single molecule/particle tracking experiments

Note: Time-gated 3D single quantum dot tracking with simultaneous spinning disk imaging

Energy Technology Data Exchange (ETDEWEB)

DeVore, M. S.; Stich, D. G.; Keller, A. M.; Phipps, M. E.; Hollingsworth, J. A.; Goodwin, P. M.; Werner, J. H., E-mail: jwerner@lanl.gov [Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Mail Stop G755, Los Alamos, New Mexico 87545 (United States); Cleyrat, C.; Lidke, D. S.; Wilson, B. S. [Department of Pathology and Cancer Research and Treatment Center, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

2015-12-15

We describe recent upgrades to a 3D tracking microscope to include simultaneous Nipkow spinning disk imaging and time-gated single-particle tracking (SPT). Simultaneous 3D molecular tracking and spinning disk imaging enable the visualization of cellular structures and proteins around a given fluorescently labeled target molecule. The addition of photon time-gating to the SPT hardware improves signal to noise by discriminating against Raman scattering and short-lived fluorescence. In contrast to camera-based SPT, single-photon arrival times are recorded, enabling time-resolved spectroscopy (e.g., measurement of fluorescence lifetimes and photon correlations) to be performed during single molecule/particle tracking experiments.

Single-Molecule Electrochemical Gating in Ionic Liquids

DEFF Research Database (Denmark)

Kay, Nicola J.; Higgins, Simon J.; Jeppesen, Jan O.

2012-01-01

The single-molecular conductance of a redox active molecular bridge has been studied in an electrochemical single-molecule transistor configuration in a room-temperature ionic liquid (RTIL). The redox active pyrrolo-tetrathiafulvalene (pTTF) moiety was attached to gold contacts at both ends through...... −(CH2)6S– groups, and gating of the redox state was achieved with the electrochemical potential. The water-free, room-temperature, ionic liquid environment enabled both the monocationic and the previously inaccessible dicationic redox states of the pTTF moiety to be studied in the in situ scanning...... and decreases again as the second redox process is passed. This is described as an “off–on–off–on–off” conductance switching behavior. This molecular conductance vs electrochemical potential relation could be modeled well as a sequential two-step charge transfer process with full or partial vibrational...

Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

OpenAIRE

Lin, Yu-Hsien; Chou, Jay-Chi

2014-01-01

This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using hafnium oxide (HfO2) gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chem...

Derivation of uranium residual radioactive material guidelines for the Elza Gate Site

International Nuclear Information System (INIS)

Cheng, J.J.; Yu, C.; Devgun, J.S.

1991-02-01

Residual radioactive material guidelines for uranium were derived for a large, homogeneously contaminated area at the Elza Gate Site in Oak Ridge, Tennessee. The derivation of the single-nuclide and total uranium guidelines was based on the requirement that the 50-year committed effective dose equivalent to hypothetical individual who lives or works in the immediate vicinity of the Elza Gate Site should not exceed a dose of 100 mrem/yr following decontamination. The DOE residual radioactive guideline computer code RESRAD was used in this evaluation. Four potential scenarios were considered for the site; the scenarios vary with regard to time spent at the site, sources of water used, and sources of food consumed. The results of the evaluation indicate that the basic dose limit of 100 mrem/yr will not be exceeded for uranium within 1000 years, provided that the soil concentration of uranium at the Elza Gate Site does not exceed the following levels: 1800 pCi/g for Scenario A (industrial worker: the expected scenario); 4000 pCi/g for Scenario B (recreationist: a plausible scenario); 470 pCi/g for Scenario C (resident farmer using pond water as the only water source: a possible but unlikely scenario); and 120 pCi/g for Scenario D (resident farmer using well water as the only water source: a possible but unlikely scenario). The uranium guideline applies to the total activity concentration of uranium isotopes in their natural activity concentration ratio of 1:1: 0.046. These guidelines are calculated on the basis of a dose of 100 mrem/yr. In setting the actual uranium guideline for the Elza Gate Site, the DOE will apply the as low as reasonably achievable (ALARA) policy to the decision-making process, along with other factors, such as determining whether a particular scenario is reasonable and appropriate. 10 refs., 3 figs., 7 tabs

Heralded linear optical quantum Fredkin gate based on one auxiliary qubit and one single photon detector

International Nuclear Information System (INIS)

Zhu Chang-Hua; Cao Xin; Quan Dong-Xiao; Pei Chang-Xing

2014-01-01

Linear optical quantum Fredkin gate can be applied to quantum computing and quantum multi-user communication networks. In the existing linear optical scheme, two single photon detectors (SPDs) are used to herald the success of the quantum Fredkin gate while they have no photon count. But analysis results show that for non-perfect SPD, the lower the detector efficiency, the higher the heralded success rate by this scheme is. We propose an improved linear optical quantum Fredkin gate by designing a new heralding scheme with an auxiliary qubit and only one SPD, in which the higher the detection efficiency of the heralding detector, the higher the success rate of the gate is. The new heralding scheme can also work efficiently under a non-ideal single photon source. Based on this quantum Fredkin gate, large-scale quantum switching networks can be built. As an example, a quantum Beneš network is shown in which only one SPD is used. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

An electrically reconfigurable logic gate intrinsically enabled by spin-orbit materials.

Science.gov (United States)

Kazemi, Mohammad

2017-11-10

The spin degree of freedom in magnetic devices has been discussed widely for computing, since it could significantly reduce energy dissipation, might enable beyond Von Neumann computing, and could have applications in quantum computing. For spin-based computing to become widespread, however, energy efficient logic gates comprising as few devices as possible are required. Considerable recent progress has been reported in this area. However, proposals for spin-based logic either require ancillary charge-based devices and circuits in each individual gate or adopt principals underlying charge-based computing by employing ancillary spin-based devices, which largely negates possible advantages. Here, we show that spin-orbit materials possess an intrinsic basis for the execution of logic operations. We present a spin-orbit logic gate that performs a universal logic operation utilizing the minimum possible number of devices, that is, the essential devices required for representing the logic operands. Also, whereas the previous proposals for spin-based logic require extra devices in each individual gate to provide reconfigurability, the proposed gate is 'electrically' reconfigurable at run-time simply by setting the amplitude of the clock pulse applied to the gate. We demonstrate, analytically and numerically with experimentally benchmarked models, that the gate performs logic operations and simultaneously stores the result, realizing the 'stateful' spin-based logic scalable to ultralow energy dissipation.

Sliding-gate valve for use with abrasive materials

Science.gov (United States)

Ayers, Jr., William J.; Carter, Charles R.; Griffith, Richard A.; Loomis, Richard B.; Notestein, John E.

1985-01-01

The invention is a flow and pressure-sealing valve for use with abrasive solids. The valve embodies special features which provide for long, reliable operating lifetimes in solids-handling service. The valve includes upper and lower transversely slidable gates, contained in separate chambers. The upper gate provides a solids-flow control function, whereas the lower gate provides a pressure-sealing function. The lower gate is supported by means for (a) lifting that gate into sealing engagement with its seat when the gate is in its open and closed positions and (b) lowering the gate out of contact with its seat to permit abrasion-free transit of the gate between its open and closed positions. When closed, the upper gate isolates the lower gate from the solids. Because of this shielding action, the sealing surface of the lower gate is not exposed to solids during transit or when it is being lifted or lowered. The chamber containing the lower gate normally is pressurized slightly, and a sweep gas is directed inwardly across the lower-gate sealing surface during the vertical translation of the gate.

Role of Oxygen in Ionic Liquid Gating on Two-Dimensional Cr2Ge2Te6: A Non-oxide Material.

Science.gov (United States)

Chen, Yangyang; Xing, Wenyu; Wang, Xirui; Shen, Bowen; Yuan, Wei; Su, Tang; Ma, Yang; Yao, Yunyan; Zhong, Jiangnan; Yun, Yu; Xie, X C; Jia, Shuang; Han, Wei

2018-01-10

Ionic liquid gating can markedly modulate a material's carrier density so as to induce metallization, superconductivity, and quantum phase transitions. One of the main issues is whether the mechanism of ionic liquid gating is an electrostatic field effect or an electrochemical effect, especially for oxide materials. Recent observation of the suppression of the ionic liquid gate-induced metallization in the presence of oxygen for oxide materials suggests the electrochemical effect. However, in more general scenarios, the role of oxygen in the ionic liquid gating effect is still unclear. Here, we perform ionic liquid gating experiments on a non-oxide material: two-dimensional ferromagnetic Cr 2 Ge 2 Te 6 . Our results demonstrate that despite the large increase of the gate leakage current in the presence of oxygen, the oxygen does not affect the ionic liquid gating effect on  the channel resistance of Cr 2 Ge 2 Te 6 devices (ionic liquid gating is more effective on the modulation of the channel resistances compared to the back gating across the 300 nm thick SiO 2 .

Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

Directory of Open Access Journals (Sweden)

Yu-Hsien Lin

2014-01-01

Full Text Available This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using hafnium oxide (HfO2 gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs. However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2 dielectric thin film during high-temperature annealing. In this study, the annealing temperature was optimized at 200°C for a HfO2 gate dielectric TFT exhibiting high mobility, a high ION/IOFF ratio, low IOFF current, and excellent subthreshold swing (SS.

A Single MEMS Resonator for Reconfigurable Multifunctional Logic Gates

KAUST Repository

Tella, Sherif Adekunle

2018-04-30

Despite recent efforts toward true electromechanical resonator-based computing, achieving complex logics functions through cascading micro resonators has been deterred by challenges involved in their interconnections and the large required array of resonators. In this work we present a single micro electromechanical resonator with two outputs that enables the realization of multifunctional logic gates as well as other complex logic operations. As examples, we demonstrate the realization of the fundamental 2-bit logic gates of OR, XOR, AND, NOR, and a half adder. The device is based on a compound resonator consisting of a clamped-guided electrostatically actuated arch beam that is attached to another resonant beam from the side, which serves as an additional actuation electrode for the arch. The structure is also provided with an additional electrothermal tuning capability. The logic operations are based on the linear frequency modulations of the arch resonator and side microbeam. The device is compatible with CMOS fabrication process and works at room temperature

A Single MEMS Resonator for Reconfigurable Multifunctional Logic Gates

KAUST Repository

Tella, Sherif Adekunle; Alcheikh, Nouha; Younis, Mohammad I.

2018-01-01

Despite recent efforts toward true electromechanical resonator-based computing, achieving complex logics functions through cascading micro resonators has been deterred by challenges involved in their interconnections and the large required array of resonators. In this work we present a single micro electromechanical resonator with two outputs that enables the realization of multifunctional logic gates as well as other complex logic operations. As examples, we demonstrate the realization of the fundamental 2-bit logic gates of OR, XOR, AND, NOR, and a half adder. The device is based on a compound resonator consisting of a clamped-guided electrostatically actuated arch beam that is attached to another resonant beam from the side, which serves as an additional actuation electrode for the arch. The structure is also provided with an additional electrothermal tuning capability. The logic operations are based on the linear frequency modulations of the arch resonator and side microbeam. The device is compatible with CMOS fabrication process and works at room temperature

NEPP Update of Independent Single Event Upset Field Programmable Gate Array Testing

Science.gov (United States)

Berg, Melanie; Label, Kenneth; Campola, Michael; Pellish, Jonathan

2017-01-01

This presentation provides a NASA Electronic Parts and Packaging (NEPP) Program update of independent Single Event Upset (SEU) Field Programmable Gate Array (FPGA) testing including FPGA test guidelines, Microsemi RTG4 heavy-ion results, Xilinx Kintex-UltraScale heavy-ion results, Xilinx UltraScale+ single event effect (SEE) test plans, development of a new methodology for characterizing SEU system response, and NEPP involvement with FPGA security and trust.

Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

Directory of Open Access Journals (Sweden)

Yu-Hsien Lin

2015-01-01

Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

International Nuclear Information System (INIS)

Lin, Y. H.; Chou, J. C.

2015-01-01

We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT_s) using different high-Κ gate dielectric materials such as silicon nitride (Si_3N_4) and aluminum oxide (Al_2O_3) at low temperature process (<300 degree) and compared them with low temperature silicon dioxide (SiO_2). The IGZO device with high-Κ gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, post annealing treatment is an essential process for completing the process. The chemical reaction of the high-κ/IGZO interface due to heat formation in high-Κ/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-Κ gate dielectric materials and explained the interface effect by charge band diagram.

Manipulating molecular quantum states with classical metal atom inputs: demonstration of a single molecule NOR logic gate.

Science.gov (United States)

Soe, We-Hyo; Manzano, Carlos; Renaud, Nicolas; de Mendoza, Paula; De Sarkar, Abir; Ample, Francisco; Hliwa, Mohamed; Echavarren, Antonio M; Chandrasekhar, Natarajan; Joachim, Christian

2011-02-22

Quantum states of a trinaphthylene molecule were manipulated by putting its naphthyl branches in contact with single Au atoms. One Au atom carries 1-bit of classical information input that is converted into quantum information throughout the molecule. The Au-trinaphthylene electronic interactions give rise to measurable energy shifts of the molecular electronic states demonstrating a NOR logic gate functionality. The NOR truth table of the single molecule logic gate was characterized by means of scanning tunnelling spectroscopy.

The impact of gate width setting and gate utilization factors on plutonium assay in passive correlated neutron counting

International Nuclear Information System (INIS)

Henzlova, D.; Menlove, H.O.; Croft, S.; Favalli, A.; Santi, P.

2015-01-01

In the field of nuclear safeguards, passive neutron multiplicity counting (PNMC) is a method typically employed in non-destructive assay (NDA) of special nuclear material (SNM) for nonproliferation, verification and accountability purposes. PNMC is generally performed using a well-type thermal neutron counter and relies on the detection of correlated pairs or higher order multiplets of neutrons emitted by an assayed item. To assay SNM, a set of parameters for a given well-counter is required to link the measured multiplicity rates to the assayed item properties. Detection efficiency, die-away time, gate utilization factors (tightly connected to die-away time) as well as optimum gate width setting are among the key parameters. These parameters along with the underlying model assumptions directly affect the accuracy of the SNM assay. In this paper we examine the role of gate utilization factors and the single exponential die-away time assumption and their impact on the measurements for a range of plutonium materials. In addition, we examine the importance of item-optimized coincidence gate width setting as opposed to using a universal gate width value. Finally, the traditional PNMC based on multiplicity shift register electronics is extended to Feynman-type analysis and application of this approach to Pu mass assay is demonstrated

The impact of gate width setting and gate utilization factors on plutonium assay in passive correlated neutron counting

Energy Technology Data Exchange (ETDEWEB)

Henzlova, D., E-mail: henzlova@lanl.gov [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Menlove, H.O. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Croft, S. [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Favalli, A.; Santi, P. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

2015-10-11

In the field of nuclear safeguards, passive neutron multiplicity counting (PNMC) is a method typically employed in non-destructive assay (NDA) of special nuclear material (SNM) for nonproliferation, verification and accountability purposes. PNMC is generally performed using a well-type thermal neutron counter and relies on the detection of correlated pairs or higher order multiplets of neutrons emitted by an assayed item. To assay SNM, a set of parameters for a given well-counter is required to link the measured multiplicity rates to the assayed item properties. Detection efficiency, die-away time, gate utilization factors (tightly connected to die-away time) as well as optimum gate width setting are among the key parameters. These parameters along with the underlying model assumptions directly affect the accuracy of the SNM assay. In this paper we examine the role of gate utilization factors and the single exponential die-away time assumption and their impact on the measurements for a range of plutonium materials. In addition, we examine the importance of item-optimized coincidence gate width setting as opposed to using a universal gate width value. Finally, the traditional PNMC based on multiplicity shift register electronics is extended to Feynman-type analysis and application of this approach to Pu mass assay is demonstrated.

Hybrid ECG-gated versus non-gated 512-slice CT angiography of the aorta and coronary artery: image quality and effect of a motion correction algorithm.

Science.gov (United States)

Lee, Ji Won; Kim, Chang Won; Lee, Geewon; Lee, Han Cheol; Kim, Sang-Pil; Choi, Bum Sung; Jeong, Yeon Joo

2018-02-01

Background Using the hybrid electrocardiogram (ECG)-gated computed tomography (CT) technique, assessment of entire aorta, coronary arteries, and aortic valve can be possible using single-bolus contrast administration within a single acquisition. Purpose To compare the image quality of hybrid ECG-gated and non-gated CT angiography of the aorta and evaluate the effect of a motion correction algorithm (MCA) on coronary artery image quality in a hybrid ECG-gated aorta CT group. Material and Methods In total, 104 patients (76 men; mean age = 65.8 years) prospectively randomized into two groups (Group 1 = hybrid ECG-gated CT; Group 2 = non-gated CT) underwent wide-detector array aorta CT. Image quality, assessed using a four-point scale, was compared between the groups. Coronary artery image quality was compared between the conventional reconstruction and motion correction reconstruction subgroups in Group 1. Results Group 1 showed significant advantages over Group 2 in aortic wall, cardiac chamber, aortic valve, coronary ostia, and main coronary arteries image quality (all P ECG-gated CT significantly improved the heart and aortic wall image quality and the MCA can further improve the image quality and interpretability of coronary arteries.

Bubble gate for in-plane flow control.

Science.gov (United States)

Oskooei, Ali; Abolhasani, Milad; Günther, Axel

2013-07-07

We introduce a miniature gate valve as a readily implementable strategy for actively controlling the flow of liquids on-chip, within a footprint of less than one square millimetre. Bubble gates provide for simple, consistent and scalable control of liquid flow in microchannel networks, are compatible with different bulk microfabrication processes and substrate materials, and require neither electrodes nor moving parts. A bubble gate consists of two microchannel sections: a liquid-filled channel and a gas channel that intercepts the liquid channel to form a T-junction. The open or closed state of a bubble gate is determined by selecting between two distinct gas pressure levels: the lower level corresponds to the "open" state while the higher level corresponds to the "closed" state. During closure, a gas bubble penetrates from the gas channel into the liquid, flanked by a column of equidistantly spaced micropillars on each side, until the flow of liquid is completely obstructed. We fabricated bubble gates using single-layer soft lithographic and bulk silicon micromachining procedures and evaluated their performance with a combination of theory and experimentation. We assessed the dynamic behaviour during more than 300 open-and-close cycles and report the operating pressure envelope for different bubble gate configurations and for the working fluids: de-ionized water, ethanol and a biological buffer. We obtained excellent agreement between the experimentally determined bubble gate operational envelope and a theoretical prediction based on static wetting behaviour. We report case studies that serve to illustrate the utility of bubble gates for liquid sampling in single and multi-layer microfluidic devices. Scalability of our strategy was demonstrated by simultaneously addressing 128 bubble gates.

Unimolecular Logic Gate with Classical Input by Single Gold Atoms.

Science.gov (United States)

Skidin, Dmitry; Faizy, Omid; Krüger, Justus; Eisenhut, Frank; Jancarik, Andrej; Nguyen, Khanh-Hung; Cuniberti, Gianaurelio; Gourdon, Andre; Moresco, Francesca; Joachim, Christian

2018-02-27

By a combination of solution and on-surface chemistry, we synthesized an asymmetric starphene molecule with two long anthracenyl input branches and a short naphthyl output branch on the Au(111) surface. Starting from this molecule, we could demonstrate the working principle of a single molecule NAND logic gate by selectively contacting single gold atoms by atomic manipulation to the longer branches of the molecule. The logical input "1" ("0") is defined by the interaction (noninteraction) of a gold atom with one of the input branches. The output is measured by scanning tunneling spectroscopy following the shift in energy of the electronic tunneling resonances at the end of the short branch of the molecule.

Retrospectively ECG-gated multi-detector row CT of the chest: does ECG-gating improve three-dimensional visualization of the bronchial tree?

International Nuclear Information System (INIS)

Schertler, T.; Wildermuth, S.; Willmann, J.K.; Crook, D.W.; Marincek, B.; Boehm, T.

2004-01-01

Purpose: To determine the impact of retrospectively ECG-gated multi-detector row CT (MDCT) on three-dimensional (3D) visualization of the bronchial tree and virtual bronchoscopy (VB) as compared to non-ECG-gated data acquisition. Materials and Methods: Contrast-enhanced retrospectively ECG-gated and non-ECG-gated MDCT of the chest was performed in 25 consecutive patients referred for assessment of coronary artery bypass grafts and pathology of the ascending aorta. ECG-gated MDCT data were reconstructed in diastole using an absolute reverse delay of -400 msec in all patients. In 10 patients additional reconstructions at -200 msec, -300 msec, and -500 msec prior to the R-wave were performed. Shaded surface display (SSD) and virtual bronchoscopy (VB) for visualization of the bronchial segments was performed with ECG-gated and non-ECG-gated MDCT data. The visualization of the bronchial tree underwent blinded scoring. Effective radiation dose and signal-to-noise ratio (SNR) for both techniques were compared. Results: There was no significant difference in visualizing single bronchial segments using ECG-gated compared to non-ECG-gated MDCT data. However, the total sum of scores for all bronchial segments visualized with non-ECG-gated MDCT was significantly higher compared to ECG-gated MDCT (P [de

Double gate graphene nanoribbon field effect transistor with single halo pocket in channel region

Science.gov (United States)

Naderi, Ali

2016-01-01

A new structure for graphene nanoribbon field-effect transistors (GNRFETs) is proposed and investigated using quantum simulation with a nonequilibrium Green's function (NEGF) method. Tunneling leakage current and ambipolar conduction are known effects for MOSFET-like GNRFETs. To minimize these issues a novel structure with a simple change of the GNRFETs by using single halo pocket in the intrinsic channel region, "Single Halo GNRFET (SH-GNRFET)", is proposed. An appropriate halo pocket at source side of channel is used to modify potential distribution of the gate region and weaken band to band tunneling (BTBT). In devices with materials like Si in channel region, doping type of halo and source/drain regions are different. But, here, due to the smaller bandgap of graphene, the mentioned doping types should be the same to reduce BTBT. Simulations have shown that in comparison with conventional GNRFET (C-GNRFET), an SH-GNRFET with appropriately halo doping results in a larger ON current (Ion), smaller OFF current (Ioff), a larger ON-OFF current ratio (Ion/Ioff), superior ambipolar characteristics, a reduced power-delay product and lower delay time.

Determination of single-kidney glomerular filtration rate (GFR) with CT urography versus renal dynamic imaging Gates method

Energy Technology Data Exchange (ETDEWEB)

You, Shan [Hebei North University, Department of Graduate, Zhangjiakou City, Hebei Province (China); Ma, XianWu; Zhang, ChangZhu; Li, Qiang [Qiqihar Chinese Medicine Hospital, Department of Radiology, Qigihar City, Heilongjiang Province (China); Shi, WenWei; Zhang, Jing; Yuan, XiaoDong [The 309th Hospital of Chinese People' s Liberation Army, Department of Radiology, Beijing (China)

2018-03-15

To present a single-kidney CT-GFR measurement and compare it with the renal dynamic imaging Gates-GFR. Thirty-six patients with hydronephrosis referred for CT urography and 99mTc-DTPA renal dynamic imaging were prospectively included. Informed consent was obtained from all patients. The CT urography protocol included non-contrast, nephrographic, and excretory phase imaging. The total CT-GFR was calculated by dividing the CT number increments of the total urinary system between the nephrographic and excretory phase by the products of iodine concentration in the aorta and the elapsed time, then multiplied by (1- Haematocrit). The total CT-GFR was then split into single-kidney CT-GFR by a left and right kidney proportionality factor. The results were compared with single-kidney Gates-GFR by using paired t-test, correlation analysis, and Bland-Altman plots. Paired difference between single-kidney CT-GFR (45.02 ± 13.91) and single-kidney Gates-GFR (51.21 ± 14.76) was 6.19 ± 5.63 ml/min, p<0.001, demonstrating 12.1% systematic underestimation with ±11.03 ml/min (±21.5%) measurement deviation. A good correlation was revealed between both measurements (r=0.87, p<0.001). The proposed single-kidney CT-GFR correlates and agrees well with the reference standard despite a systematic underestimation, therefore it could be a one-stop-shop for evaluating urinary tract morphology and split renal function. (orig.)

Determination of single-kidney glomerular filtration rate (GFR) with CT urography versus renal dynamic imaging Gates method

International Nuclear Information System (INIS)

You, Shan; Ma, XianWu; Zhang, ChangZhu; Li, Qiang; Shi, WenWei; Zhang, Jing; Yuan, XiaoDong

2018-01-01

To present a single-kidney CT-GFR measurement and compare it with the renal dynamic imaging Gates-GFR. Thirty-six patients with hydronephrosis referred for CT urography and 99mTc-DTPA renal dynamic imaging were prospectively included. Informed consent was obtained from all patients. The CT urography protocol included non-contrast, nephrographic, and excretory phase imaging. The total CT-GFR was calculated by dividing the CT number increments of the total urinary system between the nephrographic and excretory phase by the products of iodine concentration in the aorta and the elapsed time, then multiplied by (1- Haematocrit). The total CT-GFR was then split into single-kidney CT-GFR by a left and right kidney proportionality factor. The results were compared with single-kidney Gates-GFR by using paired t-test, correlation analysis, and Bland-Altman plots. Paired difference between single-kidney CT-GFR (45.02 ± 13.91) and single-kidney Gates-GFR (51.21 ± 14.76) was 6.19 ± 5.63 ml/min, p<0.001, demonstrating 12.1% systematic underestimation with ±11.03 ml/min (±21.5%) measurement deviation. A good correlation was revealed between both measurements (r=0.87, p<0.001). The proposed single-kidney CT-GFR correlates and agrees well with the reference standard despite a systematic underestimation, therefore it could be a one-stop-shop for evaluating urinary tract morphology and split renal function. (orig.)

Modeling and analysis of surface potential of single gate fully depleted SOI MOSFET using 2D-Poisson's equation

Science.gov (United States)

Mani, Prashant; Tyagi, Chandra Shekhar; Srivastav, Nishant

2016-03-01

In this paper the analytical solution of the 2D Poisson's equation for single gate Fully Depleted SOI (FDSOI) MOSFET's is derived by using a Green's function solution technique. The surface potential is calculated and the threshold voltage of the device is minimized for the low power consumption. Due to minimization of threshold voltage the short channel effect of device is suppressed and after observation we obtain the device is kink free. The structure and characteristics of SingleGate FDSOI MOSFET were matched by using MathCAD and silvaco respectively.

Minority Carrier Tunneling and Stress-Induced Leakage Current for p+ gate MOS Capacitors with Poly-Si and PolySi0.7Ge0.3 Gate Material

NARCIS (Netherlands)

Houtsma, V.E.; Holleman, J.; Salm, Cora; de Haan, I.R.; Schmitz, Jurriaan; Widdershoven, F.P.; Widdershoven, F.P.; Woerlee, P.H.

1999-01-01

In this paper the I-V conduction mechanism for gate injection (-V g), Stress-Induced Leakage Current (SILC) characteristics and time-to-breakdown (tbd) of PMOS capacitors with p+-poly-Si and poly-SiGe gate material on 5.6, 4.8 and 3.1 nm oxide thickness are studied. A model based on Minority Carrier

Performance assessment of gate material engineered AlInN/GaN underlap DG MOSFET for enhanced carrier transport efficiency

Science.gov (United States)

Pardeshi, Hemant M.; Raj, Godwin; Pati, Sudhansu; Mohankumar, N.; Sarkar, Chandan Kumar

2013-08-01

In the work proposed, performance of dual material gate (DMG) AlInN/GaN underlap DG MOSFET has been analyzed and compared with the corresponding performance of single material gate (SMG) AlInN/GaN underlap DG MOSFET using Sentaurus TCAD device simulation. A systematic, quantitative investigation of key device metrics for DMG-DG device is presented and a comparison with SMG-DG device is done for a wide range of gate and underlap lengths. The key idea in this paper is to demonstrate the improved performance exhibited by DMG-DG device over SMG-DG device, due to enhanced carrier transport efficiency and suppressed short channel effect (SCE). Simulation reveals an improvement in drain current, drain induced barrier lowering (DIBL), Ion/Ioff, Delay and Energy Delay Product (EDP) for DMG-DG MOSFET as compared to SMG-DG MOSFET. Very high drain current of 6.7 mA/μm, low DIBL of 1.62 mV/V, high Ion/Ioff ratio of 4.044e107, low delay of 0.001 ps and low EDP of 1.37e-31 J s/μm are obtained for DGM-DG device. However, subthreshold slope (SS) for DMG-DG device is on higher side than SMG-DG. The proposed AlInN/GaN Heterostructure Underlap DGM-DG MOSFET shows excellent promise as one of the candidates to substitute present MOSFET for future high speed applications.

Optimal strategy for a single-qubit gate and the trade-off between opposite types of decoherence

International Nuclear Information System (INIS)

Alicki, Robert; Horodecki, Michal; Horodecki, Ryszard; Horodecki, Pawel; Jacak, Lucjan; Machnikowski, Pawel

2004-01-01

We study reliable quantum-information processing (QIP) under two different types of environment. The first type is Markovian exponential decay, and the appropriate elementary strategy of protection of qubit is to apply fast gates. The second one is strongly non-Markovian and occurs solely during operations on the qubit. The best strategy is then to work with slow gates. If the two types are both present, one has to optimize the speed of gate. We show that such a trade-off is present for a single-qubit operation in a semiconductor quantum dot implementation of QIP, where recombination of exciton (qubit) is Markovian, while phonon dressing gives rise to the non-Markovian contribution

Two-dimensional analytical model for dual-material control-gate tunnel FETs

Science.gov (United States)

Xu, Hui Fang; Dai, Yue Hua; Gui Guan, Bang; Zhang, Yong Feng

2016-09-01

An analytical model for a dual-material control-gate (DMCG) tunnel field effect transistor (TFET) is presented for the first time in this paper, and the influence of the mobile charges on the potential profile is taken into account. On the basis of the potential profile, the lateral electric field is derived and the expression for the drain current is obtained by integrating the band-to-band tunneling (BTBT) generation rate applicable to low-bandgap and high-bandgap materials over the tunneling region. The model also predicts the impacts of the control-gate work function on the potential and drain current. The advantage of this work is that it not only offers physical insight into device physics but also provides the basic designing guideline for DMCG TFETs, enabling the designer to optimize the device in terms of the on-state current, the on-off current ratio, and suppressed ambipolar behavior. Very good agreements for both the potential and drain current are observed between the model calculations and the simulated results.

Universal holonomic single quantum gates over a geometric spin with phase-modulated polarized light.

Science.gov (United States)

Ishida, Naoki; Nakamura, Takaaki; Tanaka, Touta; Mishima, Shota; Kano, Hiroki; Kuroiwa, Ryota; Sekiguchi, Yuhei; Kosaka, Hideo

2018-05-15

We demonstrate universal non-adiabatic non-abelian holonomic single quantum gates over a geometric electron spin with phase-modulated polarized light and 93% average fidelity. This allows purely geometric rotation around an arbitrary axis by any angle defined by light polarization and phase using a degenerate three-level Λ-type system in a negatively charged nitrogen-vacancy center in diamond. Since the control light is completely resonant to the ancillary excited state, the demonstrated holonomic gate not only is fast with low power, but also is precise without the dynamical phase being subject to control error and environmental noise. It thus allows pulse shaping for further fidelity.

125 GHz sine wave gating InGaAs/InP single-photon detector with a monolithically integrated readout circuit

Science.gov (United States)

Jiang, Wen-Hao; Liu, Jian-Hong; Liu, Yin; Jin, Ge; Zhang, Jun; Pan, Jian-Wei

2017-12-01

InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. Gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and reducing module size are important challenges for the design of such detector system. Here we present for the first time an InGaAs/InP SPD with 1.25 GHz sine wave gating using a monolithically integrated readout circuit (MIRC). The MIRC has a size of 15 mm * 15 mm and implements the miniaturization of avalanche extraction for high-frequency sine wave gating. In the MIRC, low-pass filters and a low-noise radio frequency amplifier are integrated based on the technique of low temperature co-fired ceramic, which can effectively reduce the parasitic capacitance and extract weak avalanche signals. We then characterize the InGaAs/InP SPD to verify the functionality and reliability of MIRC, and the SPD exhibits excellent performance with 27.5 % photon detection efficiency, 1.2 kcps dark count rate, and 9.1 % afterpulse probability at 223 K and 100 ns hold-off time. With this MIRC, one can further design miniaturized high-frequency SPD modules that are highly required for practical applications.

Analytical threshold voltage modeling of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs

Science.gov (United States)

Goel, Ekta; Singh, Balraj; Kumar, Sanjay; Singh, Kunal; Jit, Satyabrata

2017-04-01

Two dimensional threshold voltage model of ion-implanted strained-Si double-material double-gate MOSFETs has been done based on the solution of two dimensional Poisson's equation in the channel region using the parabolic approximation method. Novelty of the proposed device structure lies in the amalgamation of the advantages of both the strained-Si channel and double-material double-gate structure with a vertical Gaussian-like doping profile. The effects of different device parameters (such as device channel length, gate length ratios, germanium mole fraction) and doping parameters (such as projected range, straggle parameter) on threshold voltage of the proposed structure have been investigated. It is observed that the subthreshold performance of the device can be improved by simply controlling the doping parameters while maintaining other device parameters constant. The modeling results show a good agreement with the numerical simulation data obtained by using ATLAS™, a 2D device simulator from SILVACO.

Crosstalk error correction through dynamical decoupling of single-qubit gates in capacitively coupled singlet-triplet semiconductor spin qubits

Science.gov (United States)

Buterakos, Donovan; Throckmorton, Robert E.; Das Sarma, S.

2018-01-01

In addition to magnetic field and electric charge noise adversely affecting spin-qubit operations, performing single-qubit gates on one of multiple coupled singlet-triplet qubits presents a new challenge: crosstalk, which is inevitable (and must be minimized) in any multiqubit quantum computing architecture. We develop a set of dynamically corrected pulse sequences that are designed to cancel the effects of both types of noise (i.e., field and charge) as well as crosstalk to leading order, and provide parameters for these corrected sequences for all 24 of the single-qubit Clifford gates. We then provide an estimate of the error as a function of the noise and capacitive coupling to compare the fidelity of our corrected gates to their uncorrected versions. Dynamical error correction protocols presented in this work are important for the next generation of singlet-triplet qubit devices where coupling among many qubits will become relevant.

2-D modeling and analysis of short-channel behavior of a front high- K gate stack triple-material gate SB SON MOSFET

Science.gov (United States)

Banerjee, Pritha; Kumari, Tripty; Sarkar, Subir Kumar

2018-02-01

This paper presents the 2-D analytical modeling of a front high- K gate stack triple-material gate Schottky Barrier Silicon-On-Nothing MOSFET. Using the two-dimensional Poisson's equation and considering the popular parabolic potential approximation, expression for surface potential as well as the electric field has been considered. In addition, the response of the proposed device towards aggressive downscaling, that is, its extent of immunity towards the different short-channel effects, has also been considered in this work. The analytical results obtained have been validated using the simulated results obtained using ATLAS, a two-dimensional device simulator from SILVACO.

Gigahertz-gated InGaAs/InP single-photon detector with detection efficiency exceeding 55% at 1550 nm

International Nuclear Information System (INIS)

Comandar, L. C.; Fröhlich, B.; Dynes, J. F.; Sharpe, A. W.; Lucamarini, M.; Yuan, Z. L.; Shields, A. J.; Penty, R. V.

2015-01-01

We report on a gated single-photon detector based on InGaAs/InP avalanche photodiodes (APDs) with a single-photon detection efficiency exceeding 55% at 1550 nm. Our detector is gated at 1 GHz and employs the self-differencing technique for gate transient suppression. It can operate nearly dead time free, except for the one clock cycle dead time intrinsic to self-differencing, and we demonstrate a count rate of 500 Mcps. We present a careful analysis of the optimal driving conditions of the APD measured with a dead time free detector characterization setup. It is found that a shortened gate width of 360 ps together with an increased driving signal amplitude and operation at higher temperatures leads to improved performance of the detector. We achieve an afterpulse probability of 7% at 50% detection efficiency with dead time free measurement and a record efficiency for InGaAs/InP APDs of 55% at an afterpulse probability of only 10.2% with a moderate dead time of 10 ns

Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers.

Science.gov (United States)

Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

2017-01-01

Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlO[Formula: see text]), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers.

Tunnel field-effect transistor with two gated intrinsic regions

Directory of Open Access Journals (Sweden)

Y. Zhang

2014-07-01

Full Text Available In this paper, we propose and validate (using simulations a novel design of silicon tunnel field-effect transistor (TFET, based on a reverse-biased p+-p-n-n+ structure. 2D device simulation results show that our devices have significant improvements of switching performance compared with more conventional devices based on p-i-n structure. With independent gate voltages applied to two gated intrinsic regions, band-to-band tunneling (BTBT could take place at the p-n junction, and no abrupt degenerate doping profile is required. We developed single-side-gate (SSG structure and double-side-gate (DSG structure. SSG devices with HfO2 gate dielectric have a point subthreshold swing of 9.58 mV/decade, while DSG devices with polysilicon gate electrode material and HfO2 gate dielectric have a point subthreshold swing of 16.39 mV/decade. These DSG devices have ON-current of 0.255 μA/μm, while that is lower for SSG devices. Having two nano-scale independent gates will be quite challenging to realize with good uniformity across the wafer and the improved behavior of our TFET makes it a promising steep-slope switch candidate for further investigations.

Simulation of 50-nm Gate Graphene Nanoribbon Transistors

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Cedric Nanmeni Bondja

2016-01-01

Full Text Available An approach to simulate the steady-state and small-signal behavior of GNR MOSFETs (graphene nanoribbon metal-semiconductor-oxide field-effect transistor is presented. GNR material parameters and a method to account for the density of states of one-dimensional systems like GNRs are implemented in a commercial device simulator. This modified tool is used to calculate the current-voltage characteristics as well the cutoff frequency fT and the maximum frequency of oscillation fmax of GNR MOSFETs. Exemplarily, we consider 50-nm gate GNR MOSFETs with N = 7 armchair GNR channels and examine two transistor configurations. The first configuration is a simplified MOSFET structure with a single GNR channel as usually studied by other groups. Furthermore, and for the first time in the literature, we study in detail a transistor structure with multiple parallel GNR channels and interribbon gates. It is shown that the calculated fT of GNR MOSFETs is significantly lower than that of GFETs (FET with gapless large-area graphene channel with comparable gate length due to the mobility degradation in GNRs. On the other hand, GNR MOSFETs show much higher fmax compared to experimental GFETs due the semiconducting nature of the GNR channels and the resulting better saturation of the drain current. Finally, it is shown that the gate control in FETs with multiple parallel GNR channels is improved while the cutoff frequency is degraded compared to single-channel GNR MOSFETs due to parasitic capacitances of the interribbon gates.

High-sensitivity pH sensor using separative extended-gate field-effect transistors with single-walled carbon-nanotube networks

Science.gov (United States)

Pyo, Ju-Young; Cho, Won-Ju

2018-04-01

We fabricate high-sensitivity pH sensors using single-walled carbon-nanotube (SWCNT) network thin-film transistors (TFTs). The sensing and transducer parts of the pH sensor are composed of separative extended-sensing gates (ESGs) with SnO2 ion-sensitive membranes and double-gate structure TFTs with thin SWCNT network channels of ∼1 nm and AlO x top-gate insulators formed by the solution-deposition method. To prevent thermal process-induced damages on the SWCNT channel layer due to the post-deposition annealing process and improve the electrical characteristics of the SWCNT-TFTs, microwave irradiation is applied at low temperatures. As a result, a pH sensitivity of 7.6 V/pH, far beyond the Nernst limit, is obtained owing to the capacitive coupling effect between the top- and bottom-gate insulators of the SWCNT-TFTs. Therefore, double-gate structure SWCNT-TFTs with separated ESGs are expected to be highly beneficial for high-sensitivity disposable biosensor applications.

Edge-on gating effect in molecular wires.

Science.gov (United States)

Lo, Wai-Yip; Bi, Wuguo; Li, Lianwei; Jung, In Hwan; Yu, Luping

2015-02-11

This work demonstrates edge-on chemical gating effect in molecular wires utilizing the pyridinoparacyclophane (PC) moiety as the gate. Different substituents with varied electronic demands are attached to the gate to simulate the effect of varying gating voltages similar to that in field-effect transistor (FET). It was observed that the orbital energy level and charge carrier's tunneling barriers can be tuned by changing the gating group from strong electron acceptors to strong electron donors. The single molecule conductance and current-voltage characteristics of this molecular system are truly similar to those expected for an actual single molecular transistor.

High speed gated x-ray imagers

International Nuclear Information System (INIS)

Kilkenny, J.D.; Bell, P.; Hanks, R.; Power, G.; Turner, R.E.; Wiedwald, J.

1988-01-01

Single and multi-frame gated x-ray images with time-resolution as fast as 150 psec are described. These systems are based on the gating of microchannel plates in a stripline configuration. The gating voltage comes from the avalanche breakdown of reverse biased p-n junction producing high power voltage pulses as short as 70 psec. Results from single and four frame x-ray cameras used on Nova are described. 8 refs., 9 figs

Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

Science.gov (United States)

Bae, Jong-Ho; Lee, Jong-Ho

2016-05-01

A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.

Nonenhanced ECG-gated quiescent-interval single-shot MRA (QISS-MRA) of the lower extremities: Comparison with contrast-enhanced MRA

Energy Technology Data Exchange (ETDEWEB)

Klasen, J. [Department of Diagnostic and Interventional Radiology, University of Duesseldorf, Medical Faculty, Duesseldorf (Germany); Blondin, D., E-mail: blondin@med.uni-duesseldorf.de [Department of Diagnostic and Interventional Radiology, University of Duesseldorf, Medical Faculty, Duesseldorf (Germany); Schmitt, P. [Siemens AG, Healthcare Sector, Erlangen (Germany); Bi, X. [Siemens Healthcare, Chicago, IL (United States); Sansone, R. [Department of Cardiology, University of Duesseldorf, Medical Faculty, Duesseldorf (Germany); Wittsack, H.-J.; Kroepil, P.; Quentin, M.; Kuhlemann, J.; Miese, F. [Department of Diagnostic and Interventional Radiology, University of Duesseldorf, Medical Faculty, Duesseldorf (Germany); Heiss, C.; Kelm, M. [Department of Cardiology, University of Duesseldorf, Medical Faculty, Duesseldorf (Germany); Antoch, G.; Lanzman, R.S. [Department of Diagnostic and Interventional Radiology, University of Duesseldorf, Medical Faculty, Duesseldorf (Germany)

2012-05-15

Aim: To evaluate electrocardiogram (ECG)-gated quiescent-interval single-shot magnetic resonance angiography (QISS-MRA) for nonenhanced assessment of peripheral artery occlusive disease (PAOD) using contrast-enhanced MRA (CE-MRA) as the reference standard. Materials and methods: Twenty-seven patients (mean age 66.6 {+-} 10.8 years) with PAOD were included in the study. QISS-MRA and CE-MRA of the lower extremity were performed using a 1.5 T MR scanner. In each patient, subjective image quality and the degree of stenosis were evaluated on a four-point scale for 15 predefined arterial segments. Results: Twenty-five of the 27 patients were considered for analysis. Subjective image quality of QISS-MRA was significantly lower for the distal aorta, pelvic arteries, and femoral arteries as compared to CE-MRA (p < 0.01), while no significant difference was found for other vascular segments. The degree of stenosis was overestimated with QISS-MRA in 23 of 365 (6.3%) segments and underestimated in two of 365 (0.5%) segments. As compared to CE-MRA, QISS-MRA had a high sensitivity (98.6%), specificity (96%) as well as positive and negative predictive value (88.7 and 99.6%, respectively) for the detection of significant stenosis ({>=}50%). Conclusion: ECG-gated QISS-MRA is a promising imaging technique for reliable assessment of PAOD without the use of contrast material.

Nonenhanced ECG-gated quiescent-interval single-shot MRA (QISS-MRA) of the lower extremities: Comparison with contrast-enhanced MRA

International Nuclear Information System (INIS)

Klasen, J.; Blondin, D.; Schmitt, P.; Bi, X.; Sansone, R.; Wittsack, H.-J.; Kröpil, P.; Quentin, M.; Kuhlemann, J.; Miese, F.; Heiss, C.; Kelm, M.; Antoch, G.; Lanzman, R.S.

2012-01-01

Aim: To evaluate electrocardiogram (ECG)-gated quiescent-interval single-shot magnetic resonance angiography (QISS-MRA) for nonenhanced assessment of peripheral artery occlusive disease (PAOD) using contrast-enhanced MRA (CE-MRA) as the reference standard. Materials and methods: Twenty-seven patients (mean age 66.6 ± 10.8 years) with PAOD were included in the study. QISS-MRA and CE-MRA of the lower extremity were performed using a 1.5 T MR scanner. In each patient, subjective image quality and the degree of stenosis were evaluated on a four-point scale for 15 predefined arterial segments. Results: Twenty-five of the 27 patients were considered for analysis. Subjective image quality of QISS-MRA was significantly lower for the distal aorta, pelvic arteries, and femoral arteries as compared to CE-MRA (p < 0.01), while no significant difference was found for other vascular segments. The degree of stenosis was overestimated with QISS-MRA in 23 of 365 (6.3%) segments and underestimated in two of 365 (0.5%) segments. As compared to CE-MRA, QISS-MRA had a high sensitivity (98.6%), specificity (96%) as well as positive and negative predictive value (88.7 and 99.6%, respectively) for the detection of significant stenosis (≥50%). Conclusion: ECG-gated QISS-MRA is a promising imaging technique for reliable assessment of PAOD without the use of contrast material.

Memory effect in gated single-photon avalanche diodes: a limiting noise contribution similar to afterpulsing

Science.gov (United States)

Contini, D.; Dalla Mora, A.; Di Sieno, L.; Cubeddu, R.; Tosi, A.; Boso, G.; Pifferi, A.

2013-03-01

In recent years, emerging applications, such as diffuse optical imaging and spectroscopy (e.g., functional brain imaging and optical mammography), in which a wide dynamic range is crucial, have turned the interest towards Single-Photon Avalanche Diode (SPAD). In these fields, the use of a fast-gated SPAD has proven to be a successful technique to increase the measurement sensitivity of different orders of magnitude. However, an unknown background noise has been observed at high illumination during the gate-OFF time, thus setting a limit to the maximum increase of the dynamic range. In this paper we describe this noise in thin-junction silicon single-photon avalanche diode when a large amount of photons reaches the gated detector during the OFF time preceding the enabling time. This memory effect increases the background noise with respect to primary dark count rate similarly to a classical afterpulsing process, but differently it is not related to a previous avalanche ignition in the detector. We discovered that memory effect increases linearly with the power of light impinging on the detector and it has an exponential trend with time constants far different from those of afterpulsing and independently of the bias voltage applied to the junction. For these reasons, the memory effect is not due to the same trapping states of afterpulsing and must be described as a different process.

Detailed simulation study of a dual material gate carbon nanotube field-effect transistor

Science.gov (United States)

Orouji, Ali A.; Arefinia, Zahra

2009-02-01

For the first time, a new type of carbon nanotube field-effect transistor (CNTFET), the dual material gate (DMG)-CNTFET, is proposed and simulated using quantum simulation that is based on self-consistent solution between two-dimensional Poisson equation and Schrödinger equation with open boundary conditions, within the nonequilibrium Green's function (NEGF) framework. The proposed structure is similar to that of the conventional coaxial CNTFET with the exception that the gate of the DMG-CNTFET consists of two laterally contacting metals with different work functions. Simulation results show DMG-CNTFET significantly decreases leakage current, drain conductance and subthreshold swing, and increases on-off current ratio and voltage gain as compared to conventional CNTFET. We demonstrate that the potential in the channel region exhibits a step function that ensures the screening of the drain potential variation by the gate near the drain resulting in suppressed short-channel effects like the drain-induced barrier lowering (DIBL) and hot-carrier effect.

Assessment of left ventricular function using 201Tl electrocardiogram-gated myocardial single photon emission computed tomography

International Nuclear Information System (INIS)

Nishikubo, Naotsugu; Tamai, Hiroyuki

2013-01-01

Advances in computed tomography (CT) technology make it possible to obtain left ventricular wall motion using 3D reconstruction. In this study, we compared the images obtained from CT and 201 Tl electrocardiogram (ECG) gated single photon emission computed tomography (SPECT). In 20 patients with ischemic heart disease, we performed 201 Tl ECG gated SPECT (GE Healthcare Millennium VG) and ECG gated CT (Philips Medical Systems Brilliance iCT) to evaluate of left ventricular wall motion during the resting phase. In SPECT, left ventricular images were reconstructed using quantitative gated SPECT (QGS) software. In CT, the images were reconstructed using Virtual Place (AZE Software). The left ventricle was classified into five regions (anterior, lateral, inferior, septal, and apical). The amplitude of the wall motion was classified into five grades according to AHA classification. The values of the wall motion were separately checked by two radiographers. Assessment of left ventricular function myocardial wall movement using the three-dimensional movie display with ECG gated myocardial SPECT data was in agreement with the evaluation by cardiac CT inspection, and corresponded with wall motion in 88 of all 100 segments. SPECT analysis has the same quantity as that of obtained from CT for evaluation of left ventricular wall motion. (author)

Single-flux-quantum logic circuits exploiting collision-based fusion gates

International Nuclear Information System (INIS)

Asai, T.; Yamada, K.; Amemiya, Y.

2008-01-01

We propose a single-flux-quantum (SFQ) logic circuit based on the fusion computing systems--collision-based and reaction-diffusion fusion computers. A fusion computing system consists of regularly arrayed unit cells (fusion gates), where each unit has two input arms and two output arms and is connected to its neighboring cells with the arms. We designed functional SFQ circuits that implemented the fusion computation. The unit cell was able to be made with ten Josephson junctions. Circuit simulation with standard Nb/Al-AlOx/Nb 2.5-kA/cm 2 process parameters showed that the SFQ fusion computing systems could operate at 10 GHz clock

Genotyping of single nucleotide polymorphism by probe-gated silica nanoparticles.

Science.gov (United States)

Ercan, Meltem; Ozalp, Veli C; Tuna, Bilge G

2017-11-15

The development of simple, reliable, and rapid approaches for molecular detection of common mutations is important for prevention and early diagnosis of genetic diseases, including Thalessemia. Oligonucleotide-gated mesoporous nanoparticles-based analysis is a new platform for mutation detection that has the advantages of sensitivity, rapidity, accuracy, and convenience. A specific mutation in β-thalassemia, one of the most prevalent inherited diseases in several countries, was used as model disease in this study. An assay for detection of IVS110 point mutation (A > G reversion) was developed by designing probe-gated mesoporous silica nanoparticles (MCM-41) loaded with reporter fluorescein molecules. The silica nanoparticles were characterized by AFM, TEM and BET analysis for having 180 nm diameter and 2.83 nm pore size regular hexagonal shape. Amine group functionalized nanoparticles were analysed with FTIR technique. Mutated and normal sequence probe oligonucleotides)about 12.7 nmol per mg nanoparticles) were used to entrap reporter fluorescein molecules inside the pores and hybridization with single stranded DNA targets amplified by PCR gave different fluorescent signals for mutated targets. Samples from IVS110 mutated and normal patients resulted in statistically significant differences when the assay procedure were applied. Copyright © 2017 Elsevier Inc. All rights reserved.

Free energy dissipation of the spontaneous gating of a single voltage-gated potassium channel.

Science.gov (United States)

Wang, Jia-Zeng; Wang, Rui-Zhen

2018-02-01

Potassium channels mainly contribute to the resting potential and re-polarizations, with the potassium electrochemical gradient being maintained by the pump Na + /K + -ATPase. In this paper, we construct a stochastic model mimicking the kinetics of a potassium channel, which integrates temporal evolving of the membrane voltage and the spontaneous gating of the channel. Its stationary probability density functions (PDFs) are found to be singular at the boundaries, which result from the fact that the evolving rates of voltage are greater than the gating rates of the channel. We apply PDFs to calculate the power dissipations of the potassium current, the leakage, and the gating currents. On a physical perspective, the essential role of the system is the K + -battery charging the leakage (L-)battery. A part of power will inevitably be dissipated among the process. So, the efficiency of energy transference is calculated.

Free energy dissipation of the spontaneous gating of a single voltage-gated potassium channel

Science.gov (United States)

Wang, Jia-Zeng; Wang, Rui-Zhen

2018-02-01

Potassium channels mainly contribute to the resting potential and re-polarizations, with the potassium electrochemical gradient being maintained by the pump Na+/K+-ATPase. In this paper, we construct a stochastic model mimicking the kinetics of a potassium channel, which integrates temporal evolving of the membrane voltage and the spontaneous gating of the channel. Its stationary probability density functions (PDFs) are found to be singular at the boundaries, which result from the fact that the evolving rates of voltage are greater than the gating rates of the channel. We apply PDFs to calculate the power dissipations of the potassium current, the leakage, and the gating currents. On a physical perspective, the essential role of the system is the K+-battery charging the leakage (L-)battery. A part of power will inevitably be dissipated among the process. So, the efficiency of energy transference is calculated.

Impact of gate engineering in enhancement mode n++GaN/InAlN/AlN/GaN HEMTs

Science.gov (United States)

Adak, Sarosij; Swain, Sanjit Kumar; Rahaman, Hafizur; Sarkar, Chandan Kumar

2016-12-01

This paper illustrate the effect of gate material engineering on the performance of enhancement mode n++GaN/InAlN/AlN/GaN high electron mobility transistors (HEMTs). A comparative analysis of key device parameters is discussed for the Triple Material Gate (TMG), Dual Material Gate (DMG) and the Single Material Gate (SMG) structure HEMTs by considering the same device dimensions. The simulation results shows that an significant improvement is noticed in the key analysis parameters such as drain current (Id), transconductance (gm), cut off frequency (fT), RF current gain, maximum cut off frequency (fmax) and RF power gain of the gate material engineered devices with respect to SMG normally off n++GaN/InAlN/AlN/GaN HEMTs. This improvement is due to the existence of the perceivable step in the surface potential along the channel which successfully screens the drain potential variation in the source side of the channel for the gate engineering devices. The analysis suggested that the proposed TMG and DMG engineered structure enhancement mode n++GaN/InAlN/AlN/GaN HEMTs can be considered as a potential device for future high speed, microwave and digital application.

Two-dimensional model for subthreshold current and subthreshold swing of graded-channel dual-material double-gate (GCDMDG) MOSFETs

Science.gov (United States)

Goel, Ekta; Kumar, Sanjay; Singh, Balraj; Singh, Kunal; Jit, Satyabrata

2017-06-01

The subthreshold performance of graded-channel dual-material double-gate (GCDMDG) MOSFETs is examined through two-dimensional (2D) analytical modeling of subthreshold-current (SC) and subthreshold-swing (SS). The potential function obtained by using the parabolic approach to solve the 2D Poisson's equation, has been used to formulate SC and SS characteristics of the device. The variations of SS against different device parameters have been obtained with the help of effective conduction path parameter. The SC and SS characteristics of the GCDMDG MOS transistor have been compared with those of the dual-material double-gate (DMDG) and simple graded-channel double-gate (GCDG) MOS structures to show its better subthreshold characteristics over the latter two devices. The results of the developed model are well-agreed with the commercially available SILVACO ATLAS™ simulator data.

Optimization of Ecg Gating in Quantitative Femoral Angiography

International Nuclear Information System (INIS)

Nilsson, S.; Berglund, I.; Erikson, U.; Johansson, J.; Walldius, G.

2003-01-01

Purpose: To determine which phase of the heart cycle would yield the highest reproducibility in measuring atherosclerosis-related variables such as arterial lumen volume and edge roughness. Material and Methods: 35 patients with hypercholesterolemia underwent select ive femoral angiography, repeated four times at 10-min intervals. The angiographies were performed with Ecg-gated exposures. In angiographies 1 and 2 the delay from R-wave maximum to each exposure was 0.1 s, in angiographies 3 and 4 the delay was 0.1, 0.3, 0.5 or 0.7 s or the exposures were performed 1/s without Ecg gating. Arterial lumen volume and edge roughness were measured in a 20-cm segment of the superficial femoral artery using a computer-based densitometric method. Measurement reproducibility was determined by comparing angiographies 1-2 and angiographies 3-4. Results: When measuring arterial lumen volume and edge roughness of a 20-cm segment of the femoral artery, reproducibility was not dependent on Ecg gating. In measuring single arterial diameters and cross-sectional areas, the reproducibility was better when exposures were made 0.1 s after the R-wave maximum than when using other settings of the Ecg gating device or without Ecg gating. Conclusion: The influence of pulsatile flow upon quantitative measurement in femoral angiograms seems to be the smallest possible in early systole, as can be demonstrated when measuring single diameters and cross-sectional areas. In variables based on integration over longer segments, measurement reproducibility seems to be independent of phase

Optimization of Ecg Gating in Quantitative Femoral Angiography

Energy Technology Data Exchange (ETDEWEB)

Nilsson, S.; Berglund, I.; Erikson, U. [Univ. Hospital, Uppsala (Sweden). Dept. of Oncology, Radiology and Clinical Immunology; Johansson, J.; Walldius, G. [Karolinska Hospital, Stockholm (Sweden). King Gustav V Research Inst.

2003-09-01

Purpose: To determine which phase of the heart cycle would yield the highest reproducibility in measuring atherosclerosis-related variables such as arterial lumen volume and edge roughness. Material and Methods: 35 patients with hypercholesterolemia underwent select ive femoral angiography, repeated four times at 10-min intervals. The angiographies were performed with Ecg-gated exposures. In angiographies 1 and 2 the delay from R-wave maximum to each exposure was 0.1 s, in angiographies 3 and 4 the delay was 0.1, 0.3, 0.5 or 0.7 s or the exposures were performed 1/s without Ecg gating. Arterial lumen volume and edge roughness were measured in a 20-cm segment of the superficial femoral artery using a computer-based densitometric method. Measurement reproducibility was determined by comparing angiographies 1-2 and angiographies 3-4. Results: When measuring arterial lumen volume and edge roughness of a 20-cm segment of the femoral artery, reproducibility was not dependent on Ecg gating. In measuring single arterial diameters and cross-sectional areas, the reproducibility was better when exposures were made 0.1 s after the R-wave maximum than when using other settings of the Ecg gating device or without Ecg gating. Conclusion: The influence of pulsatile flow upon quantitative measurement in femoral angiograms seems to be the smallest possible in early systole, as can be demonstrated when measuring single diameters and cross-sectional areas. In variables based on integration over longer segments, measurement reproducibility seems to be independent of phase.

Report on the studies on the corrosion behaviour of the constructional materials for the gate cooling system

International Nuclear Information System (INIS)

Elayathu, N.S.D.; Balachandra, J.

1974-01-01

The gate cooling system of the Trombay R-5 reactor, now under construction, is proposed to be a laminated gate designed to operate with 50 % KBO 2 solution within the temperature limits 30 deg C and 50 deg C. With a view to find suitable constructional materials for the gate, the corrosion behaviour of stainless steel 304 L(ASTM 240-69), lead (ASTM B-29), aluminium (as Boral), neoprene, perspex and carbon steel (ASTM A 302 grade B) has been investigated in 50 % KBO 2 solution at 45 deg C. After definite periods of exposure, their coupons were examined metallographically at different magnifications to assess the nature and extent of sub-surface attack. The results show that out of the materials studied, carbon steel, lead and aluminium are more liable to corrosion in the borate solution and hence their use should be avoided. (M.G.B.)

Influence of Respiratory Gating, Image Filtering, and Animal Positioning on High-Resolution Electrocardiography-Gated Murine Cardiac Single-Photon Emission Computed Tomography

Directory of Open Access Journals (Sweden)

Chao Wu

2015-01-01

Full Text Available Cardiac parameters obtained from single-photon emission computed tomographic (SPECT images can be affected by respiratory motion, image filtering, and animal positioning. We investigated the influence of these factors on ultra-high-resolution murine myocardial perfusion SPECT. Five mice were injected with 99m technetium (99mTc-tetrofosmin, and each was scanned in supine and prone positions in a U-SPECT-II scanner with respiratory and electrocardiographic (ECG gating. ECG-gated SPECT images were created without applying respiratory motion correction or with two different respiratory motion correction strategies. The images were filtered with a range of three-dimensional gaussian kernels, after which end-diastolic volumes (EDVs, end-systolic volumes (ESVs, and left ventricular ejection fractions were calculated. No significant differences in the measured cardiac parameters were detected when any strategy to reduce or correct for respiratory motion was applied, whereas big differences (> 5% in EDV and ESV were found with regard to different positioning of animals. A linear relationship (p < .001 was found between the EDV or ESV and the kernel size of the gaussian filter. In short, respiratory gating did not significantly affect the cardiac parameters of mice obtained with ultra-high-resolution SPECT, whereas the position of the animals and the image filters should be the same in a comparative study with multiple scans to avoid systematic differences in measured cardiac parameters.

The Market Gate of Miletus: damages, material characteristics and the development of a compatible mortar for restoration

Science.gov (United States)

Siegesmund, Siegfried; Middendorf, Bernhard

2008-12-01

The indoor exhibit of the Market Gate of Miletus is unique for an archaeological monument. The reconstruction of the gate was done in such a way that most marble fragments were removed leaving cored marble columns 3-4 cm in thickness. These cored columns were mounted on a steel construction and filled with different mortars or filled with specially shaped blocks of brick combined with mortar. All the missing marble elements were replaced by copies made of a Portland cement based concrete, which is compositionally similar to the original building materials. During the Second World War the monument was heavily damaged by aerial bombardment. For 2 years the Market Gate of Miletus was exposed to weathering, because a brick wall protecting the gate was also destroyed. The deterioration phenomena observed are microcracks, macroscopic fractures, flaking, sugaring, greying, salt efflorescence, calcitic-sinter layers and iron oxide formation etc. The rapid deterioration seems to be due to indoor atmospheric effects, and also by a combination of incompatible materials (e.g. marble, steel, mortar, concrete, bricks etc.). Compatible building materials like mortars or stone replacing materials have to be developed for the planned restoration. The requirements for restoration mortars are chemical-mineralogical and physical-mechanical compatibilities with the existing building materials. In detail this means that the mortar should ensure good bonding properties, adapted strength development and not stain the marble when in direct contact. The favoured mortar was developed with a hydraulic binder based on iron-free white cement and pozzolana based on activated clay. A special limestone and quartz sand mixture was used as an aggregate. The cement was adjusted using chemical additives. Specially designed tests were applied extensively to prove whether the developed mortar is suitable for the restoration of this precious monument.

Property of electrocardiogram gated single photon emission tomography by 99mTc-methoxy isobutyl isonitrile

International Nuclear Information System (INIS)

Imai, Kamon; Nishio, Yukari; Araki, Yasushi; Saito, Satoshi; Ozawa, Yukio; Yasugi, Tadao; Hagiwara, Kazuo; Kamata, Rikisaburo

1992-01-01

99m Tc-methoxy isobutyl isonitrile (MIBI) is a new developed myocardial perfusion imaging agent. Because this compound has higher photon energy than thallium (Tl), electrocardiogram gated single photon emission tomography (SPECT): end-diastolic (ED) and end-systolic (ES) short axis (SA) images could be taken. To investigate property of gated MIBI SPECT, MIBI myocardial scintigraphy, Tl scintigraphy (TMS) and analysis of left ventricular wall motion were performed in 6 patients with myocardial infarction. Left ventricule was divided into 8 segments. Perfusion defect (PD) was scored: '0' (normal), '1' (hypo-perfusion), '2' (defect). Wall motion abnormality (WMA) was also scored: '0' (normo-kinesis), '1' (hypo-kinesis), '2' (a-, dys-kinesis). Severity and extent of PD and WMA were calculated. Severity of WMA was 3.0±2.0 (M±SD), severity of PD was 3.3±1.7 in TMS, 3.7±1.3 in no-gated MIBI, 5.0±0.6 in ES-MIBI, 7.3±2.0 in ED-MIBI. Extent of WMA was 2.3±1.0. Extent of PD was 2.5±1.3 in TMS, 3.0±1.6 in no-gated MIBI, 3.5±0.8 in ES-MIBI, 4.8±1.0 in ED-MIBI. Compared with wall motion abnormality, severity and extent of PD in ED-MIBI was larger. From our data, it is concluded that perfusion defect in ED-MIBI was overestimated significantly. When we evaluate gated MIBI image, we must consider this property. (author)

Robustness of high-fidelity Rydberg gates with single-site addressability

Science.gov (United States)

Goerz, Michael H.; Halperin, Eli J.; Aytac, Jon M.; Koch, Christiane P.; Whaley, K. Birgitta

2014-09-01

Controlled-phase (cphase) gates can be realized with trapped neutral atoms by making use of the Rydberg blockade. Achieving the ultrahigh fidelities required for quantum computation with such Rydberg gates, however, is compromised by experimental inaccuracies in pulse amplitudes and timings, as well as by stray fields that cause fluctuations of the Rydberg levels. We report here a comparative study of analytic and numerical pulse sequences for the Rydberg cphase gate that specifically examines the robustness of the gate fidelity with respect to such experimental perturbations. Analytical pulse sequences of both simultaneous and stimulated Raman adiabatic passage (STIRAP) are found to be at best moderately robust under these perturbations. In contrast, optimal control theory is seen to allow generation of numerical pulses that are inherently robust within a predefined tolerance window. The resulting numerical pulse shapes display simple modulation patterns and can be rationalized in terms of an interference between distinct two-photon Rydberg excitation pathways. Pulses of such low complexity should be experimentally feasible, allowing gate fidelities of order 99.90-99.99% to be achievable under realistic experimental conditions.

Gated single-photon emission tomography imaging protocol to evaluate myocardial stunning after exercise

International Nuclear Information System (INIS)

Hashimoto, Jun; Kubo, Atsushi; Iwasaki, Ryuichiro; Iwanaga, Shiro; Mitamura, Hideo; Ogawa, Satoshi; Kosuda, Shigeru

1999-01-01

This study was designed to apply ECG-gating to stress myocardial perfusion single-photon emission tomography (SPET) for the evaluation of myocardial stunning after exercise. Technetium-99m sestamibi was selected as the perfusion agent and a rest/exercise 1-day protocol was employed. Fourteen patients without coronary stenosis and 33 patients with coronary stenosis were enrolled in the study. We carried out three data acquisitions with ECG-gating: a 15-min data acquisition starting 30 min after the rest injection (AC1), a 5-min acquisition starting 5 min after the stress injection (AC2) and a 15-min acquisition starting 20 min after the stress injection (AC3). Calculation of left ventricular ejection fraction (LVEF) values was performed by means of automatic determination of the endocardial surface for all gating intervals in the cardiac cycle. Measured global EF values in 14 patients without coronary stenosis were 52.3%±7.6% (AC1), 60.6%±8.9% (AC2) and 55.6%±5.6% (AC3), and those in 11 patients with severe ischaemia were 53.6%±8.0% (AC1), 45.6%±12.1% (AC2) and 49.7%±10.7%. The magnitude of the depression of post-stress LVEF relative to the rest LVEF correlated with the severity of ischaemia (r=0.594, P=0.002), and segments manifesting post-stress functional depression were associated with ischaemic segments showing reversible perfusion defects. Stress myocardial perfusion SPET with ECG-gating is a feasible method for the evaluation of myocardial stunning as well as exercise-induced ischaemia. (orig.)

Performance of Thallium-201 Electrocardiography-gated Myocardial Perfusion Single Photon Emission Computed Tomography to Assess Left Ventricular Function

Directory of Open Access Journals (Sweden)

Guang-Uei Hung

2005-05-01

Full Text Available This study evaluated the performance of gated single photon emission computed tomography (SPECT with thallium-201 (201Tl in assessing left ventricular ejection fraction (LVEF, end-diastolic volume (EDV, and end-systolic volume (ESV in Taiwanese by determining repeatability and correlation with two-dimensional (2D echocardiography. A total of 18 patients underwent two sequential gated SPECT acquisitions within 30 minutes in the resting state to assess repeatability. Another 28 patients who underwent gated SPECT and 2D echocardiography within 7 days were included for comparison. The two sequential measurements were well correlated with respect to LVEF, EDV, and ESV (r = 0.97, 0.95, and 0.97, respectively, all p < 0.0001. Bland-Altman analysis revealed that two standard deviations of the absolute difference between the two sequential measurements for LVEF, EDV, and ESV were 6.4%, 16.8 mL, and 8.6 mL, respectively. For LVEF, EDV, and ESV, correlations between redistribution 201Tl-gated SPECT and echocardiography were also excellent (all r = 0.83, p < 0.0001. LVEF was similar with 201Tl-gated SPECT and echocardiography, but EDV and ESV were significantly higher with echocardiography (p < 0.05. Our study revealed that 201Tl-gated SPECT has high repeatability and excellent correlation with echocardiography for the assessment of LVEF and volumes in Taiwanese. These results support the clinical application of gated SPECT in routine 201Tl myocardial perfusion imaging in Taiwanese.

A novel Tunneling Graphene Nano Ribbon Field Effect Transistor with dual material gate: Numerical studies

Science.gov (United States)

Ghoreishi, Seyed Saleh; Saghafi, Kamyar; Yousefi, Reza; Moravvej-farshi, Mohammad Kazem

2016-09-01

In this work, we present Dual Material Gate Tunneling Graphene Nano-Ribbon Field Effect Transistors (DMG-T-GNRFET) mainly to suppress the am-bipolar current with assumption that sub-threshold swing which is one of the important characteristics of tunneling transistors must not be degraded. In the proposed structure, dual material gates with different work functions are used. Our investigations are based on numerical simulations which self-consistently solves the 2D Poisson based on an atomistic mode-space approach and Schrodinger equations, within the Non-Equilibrium Green's (NEGF). The proposed device shows lower off-current and on-off ratio becomes 5order of magnitude greater than the conventional device. Also two different short channel effects: Drain Induced Barrier Shortening (DIBS) and hot-electron effect are improved in the proposed device compare to the main structure.

Volatile and Nonvolatile Characteristics of Asymmetric Dual-Gate Thyristor RAM with Vertical Structure.

Science.gov (United States)

Kim, Hyun-Min; Kwon, Dae Woong; Kim, Sihyun; Lee, Kitae; Lee, Junil; Park, Euyhwan; Lee, Ryoongbin; Kim, Hyungjin; Kim, Sangwan; Park, Byung-Gook

2018-09-01

In this paper, the volatile and nonvolatile characteristics of asymmetric dual-gate thyristor random access memory (TRAM) are investigated using the technology of a computer-aided design (TCAD) simulation. Owing to the use of two independent gates having different gate dielectric layers, volatile and nonvolatile memory functions can be realized in a single device. The first gate with a silicon oxide layer controls the one-transistor dynamic random access memory (1T-DRAM) characteristics of the device. From the simulation results, a rapid write speed (107) can be achieved. The second gate, whose dielectric material is composed of oxide/nitride/oxide (O/N/O) layers, is used to implement the nonvolatile property by trapping charges in the nitride layer. In addition, this offers an advantage when processing the 3D-stack memory application, as the device has a vertical channel structure with polycrystalline silicon.

Error-Transparent Quantum Gates for Small Logical Qubit Architectures

Science.gov (United States)

Kapit, Eliot

2018-02-01

One of the largest obstacles to building a quantum computer is gate error, where the physical evolution of the state of a qubit or group of qubits during a gate operation does not match the intended unitary transformation. Gate error stems from a combination of control errors and random single qubit errors from interaction with the environment. While great strides have been made in mitigating control errors, intrinsic qubit error remains a serious problem that limits gate fidelity in modern qubit architectures. Simultaneously, recent developments of small error-corrected logical qubit devices promise significant increases in logical state lifetime, but translating those improvements into increases in gate fidelity is a complex challenge. In this Letter, we construct protocols for gates on and between small logical qubit devices which inherit the parent device's tolerance to single qubit errors which occur at any time before or during the gate. We consider two such devices, a passive implementation of the three-qubit bit flip code, and the author's own [E. Kapit, Phys. Rev. Lett. 116, 150501 (2016), 10.1103/PhysRevLett.116.150501] very small logical qubit (VSLQ) design, and propose error-tolerant gate sets for both. The effective logical gate error rate in these models displays superlinear error reduction with linear increases in single qubit lifetime, proving that passive error correction is capable of increasing gate fidelity. Using a standard phenomenological noise model for superconducting qubits, we demonstrate a realistic, universal one- and two-qubit gate set for the VSLQ, with error rates an order of magnitude lower than those for same-duration operations on single qubits or pairs of qubits. These developments further suggest that incorporating small logical qubits into a measurement based code could substantially improve code performance.

Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions

Directory of Open Access Journals (Sweden)

Keyvan Narimani

2018-04-01

Full Text Available In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET with gate-all-around (GAA structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages. The subthreshold swing (SS at room temperature shows an average of 76 mV/dec over 4 orders of drain current Id from 5 × 10−6 to 5 × 10−2 µA/µm Optimized devices also show excellent current saturation, an important feature for analog performance.

Bias stress instability of double-gate a-IGZO TFTs on polyimide substrate

Science.gov (United States)

Cho, Won-Ju; Ahn, Min-Ju

2017-09-01

In this study, flexible double-gate thin-film transistor (TFT)-based amorphous indium-galliumzinc- oxide (a-IGZO) was fabricated on a polyimide substrate. Double-gate operation with connected front and back gates was compared with a single-gate operation. As a result, the double-gate a- IGZO TFT exhibited enhanced electrical characteristics as well as improved long-term reliability. Under positive- and negative-bias temperature stress, the threshold voltage shift of the double-gate operation was much smaller than that of the single-gate operation.

Electrical manipulation of spin states in a single electrostatically gated transition-metal complex

DEFF Research Database (Denmark)

Osorio, Edgar A; Moth-Poulsen, Kasper; van der Zant, Herre S J

2010-01-01

-field on the Mn-atom. Adding a single electron thus stabilizes the low-spin configuration and the corresponding sequential tunnelling current is suppressed by spin-blockade. From low-temperature inelastic cotunneling spectroscopy, we infer the magnetic excitation spectrum of the molecule and uncover also...... a strongly gate-dependent singlet-triplet splitting on the low-spin side. The measured bias-spectroscopy is shown to be consistent with an exact diagonalization of the Mn-complex, and an interpretation of the data is given in terms of a simplified effective model....

Multi detector computed tomography (MDCT) of the aortic root; ECG-gated verses non-ECG-gated examinations

International Nuclear Information System (INIS)

Kristiansen, Joanna; Guenther, Anne; Aalokken, Trond Mogens; Andersen, Rune

2011-01-01

Purpose: Motion artifacts may degrade a conventional CT examination of the ascending aorta and hinder accurate diagnosis. We quantitatively compared retrospectively electrocardiographic (ECG) -gated multi detector computed tomography (MDCT) with non-ECG-gated MDCT in order to demonstrate whether or not one of the methods should be preferred. Method: The study included seventeen patients with surgically reconstructed aortic root and reimplanted coronary arteries. All patients had undergone both non-gated MDCT and retrospectively ECG-gated MDCT employing a stringently modulated tube current with single phase image reconstruction. The incidence of motion artifacts in the left main coronary artery (LM), proximal right coronary artery (RCA), and aortic root and ascending aorta were rated using a four point scale. The effective dose for each scan was calculated and normalized to a 15 cm scan length. Statistical analysis of motion artifacts and radiation dose was performed using Wilcoxon matched pairs signed rank sum test. Results: A significant reduction in motion artifacts was found in all three vessels in images from the retrospectively ECG-gated scans (LM: P = 0.005, RCA: P = 0.015, aorta: P = 0.003). The mean normalized effective radiation dose was 3.69 mSv (±1.03) for the non-ECG-gated scans and 16.37 mSv (±2.53) for the ECG-gated scans. Conclusion: Retrospective ECG-gating with single phase reconstruction significantly reduces the incidence of motion artifacts in the aortic root and the proximal portion of the coronary arteries but at the expense of a fourfold increase in radiation dose.

STM studies of an atomic-scale gate electrode formed by a single charged vacancy in GaAs

Science.gov (United States)

Lee, Donghun; Daughton, David; Gupta, Jay

2009-03-01

Electric-field control of spin-spin interactions at the atomic level is desirable for the realization of spintronics and spin-based quantum computation. Here we demonstrate the realization of an atomic-scale gate electrode formed by a single charged vacancy on the GaAs(110) surface[1]. We can position these vacancies with atomic precision using the tip of a home-built, low temperature STM. Tunneling spectroscopy of single Mn acceptors is used to quantify the electrostatic field as a function of distance from the vacancy. Single Mn acceptors are formed by substituting Mn adatoms for Ga atoms in the first layer of the p-GaAs(110) surface[2]. Depending on the distance, the in-gap resonance of single Mn acceptors can shift as much as 200meV. Our data indicate that the electrostatic field decays according to a screened Coulomb potential. The charge state of the vacancy can be switched to neutral, as evidenced by the Mn resonance returning to its unperturbed position. Reversible control of the local electric field as well as charged states of defects in semiconductors can open new insights such as realizing an atomic-scale gate control and studying spin-spin interactions in semiconductors. http://www.physics.ohio-state.edu/sim jgupta [1] D. Lee and J.A. Gupta (in preparation) [2] D. Kitchen et al., Nature 442, 436-439 (2006)

Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials

Science.gov (United States)

Stieger, Christian; Szabo, Aron; Bunjaku, Teutë; Luisier, Mathieu

2017-07-01

Through advanced quantum mechanical simulations combining electron transport and phonon transport from first-principles, self-heating effects are investigated in n-type transistors with single-layer MoS2, WS2, and black phosphorus as channel materials. The selected 2-D crystals all exhibit different phonon-limited mobility values, as well as electron and phonon properties, which have a direct influence on the increase in their lattice temperature and on the power dissipated inside their channel as a function of the applied gate voltage and electrical current magnitude. This computational study reveals (i) that self-heating plays a much more important role in 2-D materials than in Si nanowires, (ii) that it could severely limit the performance of 2-D devices at high current densities, and (iii) that black phosphorus appears less sensitive to this phenomenon than transition metal dichalcogenides.

Low-power logic computing realized in a single electric-double-layer MoS2 transistor gated with polymer electrolyte

Science.gov (United States)

Guo, Junjie; Xie, Dingdong; Yang, Bingchu; Jiang, Jie

2018-06-01

Due to its mechanical flexibility, large bandgap and carrier mobility, atomically thin molybdenum disulphide (MoS2) has attracted widespread attention. However, it still lacks a facile route to fabricate a low-power high-performance logic gates/circuits before it gets the real application. Herein, we reported a facile and environment-friendly method to establish the low-power logic function in a single MoS2 field-effect transistor (FET) configuration gated with a polymer electrolyte. Such low-power and high-performance MoS2 FET can be implemented by using water-soluble polyvinyl alcohol (PVA) polymer as proton-conducting electric-double-layer (EDL) dielectric layer. It exhibited an ultra-low voltage (1.5 V) and a good performance with a high current on/off ratio (Ion/off) of 1 × 105, a large electron mobility (μ) of 47.5 cm2/V s, and a small subthreshold swing (S) of 0.26 V/dec, respectively. The inverter can be realized by using such a single MoS2 EDL FET with a gain of ∼4 at the operation voltage of only ∼1 V. Most importantly, the neuronal AND logic computing can be also demonstrated by using such a double-lateral-gate single MoS2 EDL transistor. These results show an effective step for future applications of 2D MoS2 FETs for integrated electronic engineering and low-energy environment-friendly green electronics.

Signatures of Mechanosensitive Gating.

Science.gov (United States)

Morris, Richard G

2017-01-10

The question of how mechanically gated membrane channels open and close is notoriously difficult to address, especially if the protein structure is not available. This perspective highlights the relevance of micropipette-aspirated single-particle tracking-used to obtain a channel's diffusion coefficient, D, as a function of applied membrane tension, σ-as an indirect assay for determining functional behavior in mechanosensitive channels. While ensuring that the protein remains integral to the membrane, such methods can be used to identify not only the gating mechanism of a protein, but also associated physical moduli, such as torsional and dilational rigidity, which correspond to the protein's effective shape change. As an example, three distinct D-versus-σ "signatures" are calculated, corresponding to gating by dilation, gating by tilt, and gating by a combination of both dilation and tilt. Both advantages and disadvantages of the approach are discussed. Copyright © 2017 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Double optical gating

Science.gov (United States)

Gilbertson, Steve

The observation and control of dynamics in atomic and molecular targets requires the use of laser pulses with duration less than the characteristic timescale of the process which is to be manipulated. For electron dynamics, this time scale is on the order of attoseconds where 1 attosecond = 10 -18 seconds. In order to generate pulses on this time scale, different gating methods have been proposed. The idea is to extract or "gate" a single pulse from an attosecond pulse train and switch off all the other pulses. While previous methods have had some success, they are very difficult to implement and so far very few labs have access to these unique light sources. The purpose of this work is to introduce a new method, called double optical gating (DOG), and to demonstrate its effectiveness at generating high contrast single isolated attosecond pulses from multi-cycle lasers. First, the method is described in detail and is investigated in the spectral domain. The resulting attosecond pulses produced are then temporally characterized through attosecond streaking. A second method of gating, called generalized double optical gating (GDOG), is also introduced. This method allows attosecond pulse generation directly from a carrier-envelope phase un-stabilized laser system for the first time. Next the methods of DOG and GDOG are implemented in attosecond applications like high flux pulses and extreme broadband spectrum generation. Finally, the attosecond pulses themselves are used in experiments. First, an attosecond/femtosecond cross correlation is used for characterization of spatial and temporal properties of femtosecond pulses. Then, an attosecond pump, femtosecond probe experiment is conducted to observe and control electron dynamics in helium for the first time.

Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in ZrO2 gate material

International Nuclear Information System (INIS)

Lee, Hye-Ryoung; Choi, Samjong; Cho, Kyoungah; Kim, Sangsig

2007-01-01

Capacitance versus voltage (C-V) curves of Ge-nanocrystals (NCs)-embedded metal-oxide-semiconductor (MOS) capacitors are characterized in this work. Ge NCs were formed in 20-nm thick ZrO 2 gate layers by ion implantation and subsequent annealing procedures. The formation of the Ge NCs in the ZrO 2 gate layers was confirmed by high-resolution transmission electron microscopy and energy dispersive spectroscopy. The C-V curves obtained from a representative MOS capacitor embedded with the Ge NCs exhibit a 3 V memory window as bias voltage varied from 9 to - 9 V and then back to the initial positive voltage, whereas MOS capacitors without Ge NCs show negligible memory windows at the same voltage range. This indicates the presence of charge storages in the Ge NCs. The counterclockwise hysteresis observed from the C-V curves implies that electrons are trapped in Ge NCs presented inside the ZrO 2 gate layer. And our experimental results obtained from capacitance versus time measurements show good retention characteristics of Ge-NCs-embedded MOS capacitors with ZrO 2 gate material for the application of NFGM

Single OR molecule and OR atomic circuit logic gates interconnected on a Si(100)H surface

International Nuclear Information System (INIS)

Ample, F; Joachim, C; Duchemin, I; Hliwa, M

2011-01-01

Electron transport calculations were carried out for three terminal OR logic gates constructed either with a single molecule or with a surface dangling bond circuit interconnected on a Si(100)H surface. The corresponding multi-electrode multi-channel scattering matrix (where the central three terminal junction OR gate is the scattering center) was calculated, taking into account the electronic structure of the supporting Si(100)H surface, the metallic interconnection nano-pads, the surface atomic wires and the molecule. Well interconnected, an optimized OR molecule can only run at a maximum of 10 nA output current intensity for a 0.5 V bias voltage. For the same voltage and with no molecule in the circuit, the output current of an OR surface atomic scale circuit can reach 4 μA.

Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for Single-Event Gate Rapture and Single-Event Burnout : NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

Science.gov (United States)

Scheick, Leif

2011-01-01

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. TheSCF9550 from Semicoa and the IRHM57260SE from International Rectifier were tested to NASA test condition/standards and requirements.The IRHM57260SE performed much better when compared to previous testing. These initial results confirm that parts from the Temecula line are marginally comparable to the El Segundo line. The SCF9550 from Semicoa was also tested and represents the initial parts offering from this vendor. Both parts experienced single-event gate rupture (SEGR) and single-event burnout (SEB). All of the SEGR was from gate to drain.

Clinical evaluation of the Tl-201 ECG-gated myocardial SPECT

International Nuclear Information System (INIS)

Mochizuki, Teruhito

1989-01-01

In order to evaluate the clinical usefulness of the Tl-201 ECG-gated myocardial single photon emission computed tomography (SPECT), we compared the wall motion and the grade of the Tl-201 uptake of the ECG-gated myocardial SPECT with the wall motion of the ECG-gated blood pool SPECT. Materials were 87 patients of 50 old myocardial infarctions (OMIs), 19 hypertrophic cardiomyopathies (HCMs), 2 dilated cardiomyopathies (DCMs) and 16 others. After intravenous injection of 111-185 MBq (3-5 mCi) of Tl-201 at rest, the projection data were acquired using a rotating gamma-camera through 180deg, from RAO 45deg in 24 directions, each of which consisted of 80-100 beats. For the reconstruction of ED, ES and non-gated images, R-R interval was divided into about 20 (18-22) fractions. In 348 regions of interest (anterior, septal, lateral and inferior wall) in 87 cases, wall motion and the Tl-201 uptake were evaluated to three grades (normal, hypokinesis and akinesis; normal, low and defect, respectively), which were compared with the wall motion of the ECG-gated blood pool SPECT. The wall motion and the grade of the Tl-201 uptake of the ECG-gated myocardial SPECT correlated well with the wall motion of the ECG-gated blood pool SPECT (96.6% and 87.9%, respectively). In conclusion, the ECG-gated myocardial SPECT can provide clear perfusion images and is a very useful diagnostic strategy to evaluate the regional wall motion and perfusion simultaneously. (author)

Single attosecond pulse generation by using plasmon-driven double optical gating technology in crossed metal nanostructures

Science.gov (United States)

Feng, Liqiang; Liu, Katheryn

2018-05-01

An effective method to obtain the single attosecond pulses (SAPs) by using the multi-cycle plasmon-driven double optical gating (DOG) technology in the specifically designed metal nanostructures has been proposed and investigated. It is found that with the introduction of the crossed metal nanostructures along the driven and the gating polarization directions, not only the harmonic cutoff can be extended, but also the efficient high-order harmonic generation (HHG) at the very highest orders occurs only at one side of the region inside the nanostructure. As a result, a 93 eV supercontinuum with the near stable phase can be found. Further, by properly introducing an ultraviolet (UV) pulse into the driven laser polarization direction (which is defined as the DOG), the harmonic yield can be enhanced by two orders of magnitude in comparison with the singe polarization gating (PG) technology. However, as the polarized angle or the ellipticity of the UV pulse increase, the enhancement of the harmonic yield is slightly reduced. Finally, by superposing the selected harmonics from the DOG scheme, a 30 as SAP with intensity enhancement of two orders of magnitude can be obtained.

Analytical modeling and simulation of subthreshold behavior in nanoscale dual material gate AlGaN/GaN HEMT

Science.gov (United States)

Kumar, Sona P.; Agrawal, Anju; Chaujar, Rishu; Gupta, Mridula; Gupta, R. S.

2008-07-01

A two-dimensional (2-D) analytical model for a Dual Material Gate (DMG) AlGaN/GaN High Electron Mobility Transistor (HEMT) has been developed to demonstrate the unique attributes of this device structure in suppressing short channel effects (SCEs). The model accurately predicts the channel potential, electric field variation along the channel, and sub-threshold drain current, taking into account the effect of lengths of the two gate metals, their work functions, barrier layer thicknesses, and applied drain biases. It is seen that the SCEs and hot carrier effects in DMG AlGaN/GaN HEMT are suppressed due to the work function difference of the two metal gates, thereby screening the drain potential variations by the gate near the drain. Besides, a more uniform electric field along the channel leads to improved carrier transport efficiency. The accuracy of the results obtained from our analytical model has been verified using ATLAS device simulations.

GATE V6: a major enhancement of the GATE simulation platform enabling modelling of CT and radiotherapy

Energy Technology Data Exchange (ETDEWEB)

Jan, S; Becheva, E [DSV/I2BM/SHFJ, Commissariat a l' Energie Atomique, Orsay (France); Benoit, D; Rehfeld, N; Stute, S; Buvat, I [IMNC-UMR 8165 CNRS-Paris 7 and Paris 11 Universities, 15 rue Georges Clemenceau, 91406 Orsay Cedex (France); Carlier, T [INSERM U892-Cancer Research Center, University of Nantes, Nantes (France); Cassol, F; Morel, C [Centre de physique des particules de Marseille, CNRS-IN2P3 and Universite de la Mediterranee, Aix-Marseille II, 163, avenue de Luminy, 13288 Marseille Cedex 09 (France); Descourt, P; Visvikis, D [INSERM, U650, Laboratoire du Traitement de l' Information Medicale (LaTIM), CHU Morvan, Brest (France); Frisson, T; Grevillot, L; Guigues, L; Sarrut, D; Zahra, N [Universite de Lyon, CREATIS, CNRS UMR5220, Inserm U630, INSA-Lyon, Universite Lyon 1, Centre Leon Berard (France); Maigne, L; Perrot, Y [Laboratoire de Physique Corpusculaire, 24 Avenue des Landais, 63177 Aubiere Cedex (France); Schaart, D R [Delft University of Technology, Radiation Detection and Medical Imaging, Mekelweg 15, 2629 JB Delft (Netherlands); Pietrzyk, U, E-mail: buvat@imnc.in2p3.fr [Reseach Center Juelich, Institute of Neurosciences and Medicine and Department of Physics, University of Wuppertal (Germany)

2011-02-21

GATE (Geant4 Application for Emission Tomography) is a Monte Carlo simulation platform developed by the OpenGATE collaboration since 2001 and first publicly released in 2004. Dedicated to the modelling of planar scintigraphy, single photon emission computed tomography (SPECT) and positron emission tomography (PET) acquisitions, this platform is widely used to assist PET and SPECT research. A recent extension of this platform, released by the OpenGATE collaboration as GATE V6, now also enables modelling of x-ray computed tomography and radiation therapy experiments. This paper presents an overview of the main additions and improvements implemented in GATE since the publication of the initial GATE paper (Jan et al 2004 Phys. Med. Biol. 49 4543-61). This includes new models available in GATE to simulate optical and hadronic processes, novelties in modelling tracer, organ or detector motion, new options for speeding up GATE simulations, examples illustrating the use of GATE V6 in radiotherapy applications and CT simulations, and preliminary results regarding the validation of GATE V6 for radiation therapy applications. Upon completion of extensive validation studies, GATE is expected to become a valuable tool for simulations involving both radiotherapy and imaging.

Structured-gate organic field-effect transistors

International Nuclear Information System (INIS)

Aljada, Muhsen; Pandey, Ajay K; Velusamy, Marappan; Burn, Paul L; Meredith, Paul; Namdas, Ebinazar B

2012-01-01

We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO 2 ) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends. (paper)

Structured-gate organic field-effect transistors

Science.gov (United States)

Aljada, Muhsen; Pandey, Ajay K.; Velusamy, Marappan; Burn, Paul L.; Meredith, Paul; Namdas, Ebinazar B.

2012-06-01

We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO2) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends.

Single photon SWAP gate using electromagnetically induced transparency

International Nuclear Information System (INIS)

Yavuz, D.D.

2005-01-01

We describe a scheme that performs a SWAP gate between two photons at different wavelengths with near 100% fidelity. The essential idea is the preparation of a near-maximal atomic coherence using electromagnetically induced transparency

A computational study of the effects of linear doping profile on the high-frequency and switching performances of hetero-material-gate CNTFETs

International Nuclear Information System (INIS)

Wang Wei; Li Na; Ren Yuzhou; Li Hao; Zheng Lifen; Li Jin; Jiang Junjie; Chen Xiaoping; Wang Kai; Xia Chunping

2013-01-01

The effects of linear doping profile near the source and drain contacts on the switching and high-frequency characteristics for conventional single-material-gate CNTFET (C-CNTFET) and hetero-material-gate CNTFET (HMG-CNTFET) have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self-consistently with Poisson's equations. The simulation results show that at a CNT channel length of 20 nm with chirality (7, 0), the intrinsic cutoff frequency of C-CNTFETs reaches up to a few THz. In addition, a comparison study has been performed between C-and HMG-CNTFETs. For the C-CNTFET, results reveal that a longer linear doping length can improve the cutoff frequency and switching speed. However, it has the reverse effect on on/off current ratios. To improve the on/off current ratios performance of CNTFETs and overcome short-channel effects (SCEs) in high-performance device applications, a novel CNTFET structure with a combination of an HMG and linear doping profile has been proposed. It is demonstrated that the HMG structure design with an optimized linear doping length has improved high-frequency and switching performances as compared to C-CNTFETs. The simulation study may be useful for understanding and optimizing high-performance of CNTFETs and assessing the reliability of CNTFETs for prospective applications. (semiconductor devices)

Single ion implantation for single donor devices using Geiger mode detectors

International Nuclear Information System (INIS)

Bielejec, E; Seamons, J A; Carroll, M S

2010-01-01

Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single photon emission sources, and magnetic imaging using defect centers in diamond. Ion implantation, an industry standard for atom placement in materials, requires augmentation for single ion capability including a method for detecting a single ion arrival. Integrating single ion detection techniques with the single donor device construction region allows single ion arrival to be assured. Improving detector sensitivity is linked to improving control over the straggle of the ion as well as providing more flexibility in lay-out integration with the active region of the single donor device construction zone by allowing ion sensing at potentially greater distances. Using a remotely located passively gated single ion Geiger mode avalanche diode (SIGMA) detector we have demonstrated 100% detection efficiency at a distance of >75 μm from the center of the collecting junction. This detection efficiency is achieved with sensitivity to ∼600 or fewer electron-hole pairs produced by the implanted ion. Ion detectors with this sensitivity and integrated with a thin dielectric, for example a 5 nm gate oxide, using low energy Sb implantation would have an end of range straggle of -1 and 10 -4 for operation temperatures of ∼300 K and ∼77 K, respectively. Low temperature operation and reduced false, 'dark', counts are critical to achieving high confidence in single ion arrival. For the device performance in this work, the confidence is calculated as a probability of >98% for counting one and only one ion for a false count probability of 10 -4 at an average ion number per gated window of 0.015.

Four-frame gated optical imager with 120-ps resolution

International Nuclear Information System (INIS)

Young, P.E.; Hares, J.D.; Kilkenny, J.D.; Phillion, D.W.; Campbell, E.M.

1988-04-01

In this paper we describe the operation and applications of a framing camera capable of four separate two-dimensional images with each frame having a 120-ps gate width. Fast gating of a single frame is accomplished by using a wafer image intensifier tube in which the cathode is capacitively coupled to an external electrode placed outside of the photocathode of the tube. This electrode is then pulsed relative to the microchannel plate by a narrow (120 ps), high-voltage pulse. Multiple frames are obtained by using multiple gated tubes which share a single bias supply and pulser with relative gate times selected by the cable lengths between the tubes and the pulser. A beamsplitter system has been constructed which produces a separate image for each tube from a single scene. Applications of the framing camera to inertial confinement fusion experiments are discussed

Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures.

Science.gov (United States)

Hamer, Matthew J; Tóvári, Endre; Zhu, Mengjian; Thompson, Michael Dermot; Mayorov, Alexander S; Prance, Jonathan; Lee, Yongjin; Haley, Richard; Kudrynskyi, Zakhar R; Patanè, Amalia; Terry, Daniel; Kovalyuk, Zakhar D; Ensslin, Klaus; Kretinin, Andrey V; Geim, Andre K; Gorbachev, Roman Vladislavovich

2018-05-15

Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.

GATE: Improving the computational efficiency

International Nuclear Information System (INIS)

Staelens, S.; De Beenhouwer, J.; Kruecker, D.; Maigne, L.; Rannou, F.; Ferrer, L.; D'Asseler, Y.; Buvat, I.; Lemahieu, I.

2006-01-01

GATE is a software dedicated to Monte Carlo simulations in Single Photon Emission Computed Tomography (SPECT) and Positron Emission Tomography (PET). An important disadvantage of those simulations is the fundamental burden of computation time. This manuscript describes three different techniques in order to improve the efficiency of those simulations. Firstly, the implementation of variance reduction techniques (VRTs), more specifically the incorporation of geometrical importance sampling, is discussed. After this, the newly designed cluster version of the GATE software is described. The experiments have shown that GATE simulations scale very well on a cluster of homogeneous computers. Finally, an elaboration on the deployment of GATE on the Enabling Grids for E-Science in Europe (EGEE) grid will conclude the description of efficiency enhancement efforts. The three aforementioned methods improve the efficiency of GATE to a large extent and make realistic patient-specific overnight Monte Carlo simulations achievable

A single high dose of escitalopram disrupts sensory gating and habituation, but not sensorimotor gating in healthy volunteers

DEFF Research Database (Denmark)

Oranje, Bob; Wienberg, Malene; Glenthøj, Birte Yding

2011-01-01

Early mechanisms to limit the input of sensory information to higher brain areas are important for a healthy individual. In previous studies, we found that a low dose of 10mg escitalopram (SSRI) disrupts habituation, without affecting sensory and sensorimotor gating in healthy volunteers. In the ......Early mechanisms to limit the input of sensory information to higher brain areas are important for a healthy individual. In previous studies, we found that a low dose of 10mg escitalopram (SSRI) disrupts habituation, without affecting sensory and sensorimotor gating in healthy volunteers....... In the current study a higher dose of 15mg was used. The hypothesis was that this higher dose of escitalopram would not only disrupt habituation, but also sensory and sensorimotor gating. Twenty healthy male volunteers received either placebo or 15mg escitalopram, after which they were tested in a P50...... suppression, and a habituation and prepulse inhibition (PPI) of the startle reflex paradigm. Escitalopram significantly decreased P50 suppression and habituation, but had no effect on PPI. The results indicate that habituation and sensory gating are disrupted by increased serotonergic activity, while...

Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2

Science.gov (United States)

Palade, C.; Lepadatu, A. M.; Slav, A.; Lazanu, S.; Teodorescu, V. S.; Stoica, T.; Ciurea, M. L.

2018-01-01

Trilayer memory capacitors with Ge nanocrystals (NCs) floating gate in HfO2 were obtained by magnetron sputtering deposition on p-type Si substrate followed by rapid thermal annealing at relatively low temperature of 600 °C. The frequency dispersion of capacitance and resistance was measured in accumulation regime of Al/HfO2 gate oxide/Ge NCs in HfO2 floating gate/HfO2 tunnel oxide/SiOx/p-Si/Al memory capacitors. For simulation of the frequency dispersion a complex circuit model was used considering an equivalent parallel RC circuit for each layer of the trilayer structure. A series resistance due to metallic contacts and Si substrate was necessary to be included in the model. A very good fit to the experimental data was obtained and the parameters of each layer in the memory capacitor, i.e. capacitances and resistances were determined and in turn the intrinsic material parameters, i.e. dielectric constants and resistivities of layers were evaluated. The results are very important for the study and optimization of the hysteresis behaviour of floating gate memories based on NCs embedded in oxide.

Improved performance of nanoscale junctionless tunnel field-effect transistor based on gate engineering approach

Science.gov (United States)

Molaei Imen Abadi, Rouzbeh; Sedigh Ziabari, Seyed Ali

2016-11-01

In this paper, a first qualitative study on the performance characteristics of dual-work function gate junctionless TFET (DWG-JLTFET) on the basis of energy band profile modulation is investigated. A dual-work function gate technique is used in a JLTFET in order to create a downward band bending on the source side similar to PNPN structure. Compared with the single-work function gate junctionless TFET (SWG-JLTFET), the numerical simulation results demonstrated that the DWG-JLTFET simultaneously optimizes the ON-state current, the OFF-state leakage current, and the threshold voltage and also improves average subthreshold slope. It is illustrated that if appropriate work functions are selected for the gate materials on the source side and the drain side, the JLTFET exhibits a considerably improved performance. Furthermore, the optimization design of the tunnel gate length ( L Tun) for the proposed DWG-JLTFET is studied. All the simulations are done in Silvaco TCAD for a channel length of 20 nm using the nonlocal band-to-band tunneling (BTBT) model.

Measurement of ventricular function by ECG gating during atrial fibrillation

International Nuclear Information System (INIS)

Bacharach, S.L.; Green, M.V.; Bonow, R.O.; Findley, S.L.; Ostrow, H.G.; Johnston, G.S.

1981-01-01

The assumptions necessary to perform ECG-gated cardiac studies are seemingly not valid for patients in atrial fibrillation (AF). To evaluate the effect of AF on equilibrium gated scintigraphy, beat-by-beat measurements of left-ventricular function were made on seven subjects in AF (mean heart rate 64 bpm), using a high-efficiency nonimaging detector. The parameters evaluated were ejection fraction (EF), time to end-systole (TES), peak rates of ejection and filling (PER,PFR), and their times of occurrence (TPER, TPFR). By averaging together single-beat values of EF, PER, etc., it was possible to determine the true mean values of these parameters. The single-beam mean values were compared with the corresponding parameters calculated from one ECG-gated time-activity curve (TAC) obtained by superimposing all the single-beat TACs irrespective of their length. For this population with slow heart rates, we find that the values for EF, etc., produced from ECG-gated time-activity curves, are very similar to those obtained from the single-beat data. Thus use of ECG gating at low heart rates may allow reliable estimation of average cardiac function even in subjects with AF

High-Mobility 6,13-Bis(triisopropylsilylethynyl) Pentacene Transistors Using Solution-Processed Polysilsesquioxane Gate Dielectric Layers.

Science.gov (United States)

Matsuda, Yu; Nakahara, Yoshio; Michiura, Daisuke; Uno, Kazuyuki; Tanaka, Ichiro

2016-04-01

Polysilsesquioxane (PSQ) is a low-temperature curable polymer that is compatible with low-cost plastic substrates. We cured PSQ gate dielectric layers by irradiation with ultraviolet light at ~60 °C, and used them for 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) thin film transistors (TFTs). The fabricated TFTs have shown the maximum and average hole mobility of 1.3 and 0.78 ± 0.3 cm2V-1s-1, which are comparable to those of the previously reported transistors using single-crystalline TIPS-pentacene micro-ribbons for their active layers and thermally oxidized SiO2 for their gate dielectric layers. Itis therefore demonstrated that PSQ is a promising polymer gate dielectric material for low-cost organic TFTs.

Dual-gated volumetric modulated arc therapy

International Nuclear Information System (INIS)

Fahimian, Benjamin; Wu, Junqing; Wu, Huanmei; Geneser, Sarah; Xing, Lei

2014-01-01

Gated Volumetric Modulated Arc Therapy (VMAT) is an emerging radiation therapy modality for treatment of tumors affected by respiratory motion. However, gating significantly prolongs the treatment time, as delivery is only activated during a single respiratory phase. To enhance the efficiency of gated VMAT delivery, a novel dual-gated VMAT (DG-VMAT) technique, in which delivery is executed at both exhale and inhale phases in a given arc rotation, is developed and experimentally evaluated. Arc delivery at two phases is realized by sequentially interleaving control points consisting of MUs, MLC sequences, and angles of VMAT plans generated at the exhale and inhale phases. Dual-gated delivery is initiated when a respiration gating signal enters the exhale window; when the exhale delivery concludes, the beam turns off and the gantry rolls back to the starting position for the inhale window. The process is then repeated until both inhale and exhale arcs are fully delivered. DG-VMAT plan delivery accuracy was assessed using a pinpoint chamber and diode array phantom undergoing programmed motion. DG-VMAT delivery was experimentally implemented through custom XML scripting in Varian’s TrueBeam™ STx Developer Mode. Relative to single gated delivery at exhale, the treatment time was improved by 95.5% for a sinusoidal breathing pattern. The pinpoint chamber dose measurement agreed with the calculated dose within 0.7%. For the DG-VMAT delivery, 97.5% of the diode array measurements passed the 3%/3 mm gamma criterion. The feasibility of DG-VMAT delivery scheme has been experimentally demonstrated for the first time. By leveraging the stability and natural pauses that occur at end-inspiration and end-exhalation, DG-VMAT provides a practical method for enhancing gated delivery efficiency by up to a factor of two

Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

Science.gov (United States)

Kim, Woo Young; Kim, Hyeon-Don; Kim, Teun-Teun; Park, Hyun-Sung; Lee, Kanghee; Choi, Hyun Joo; Lee, Seung Hoon; Son, Jaehyeon; Park, Namkyoo; Min, Bumki

2016-01-01

Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer.

Evaluation of left ventricular function and volume in patients with dilated cardiomyopathy: Gated myocardial single-photon emission tomography (SPECT) versus echocardiography

International Nuclear Information System (INIS)

Berk, Fatma; Isgoren, S.; Demir, H.; Kozdag, G.; Ural, D.; Komsuoglu, B.

2005-01-01

Left ventricular function, volumes and regional wall motion provide valuable diagnostic information and are of long-term prognostic importance in patients with dilated cardiomyopathy (DCM). This study was designed to compare the effectiveness of 2D-echocardiography and gated single-photon emission tomography (SPECT) for evaluation of these parameters in patients with DCM. Gated SPECT and 2D-echocardiography were performed in 33 patients having DCM. Gated SPECT data, including left ventricular ejection fraction (LVEF), were processed using an automated algorithm. Standard technique was used for 2D-echocardiography. Regional wall motion was evaluated using both modalities and was scored by two independent observers using a 16-sement model with a 5-point scoring system. The overall agreement between the two imaging modalities for the assessment of regional wall motion was 56% (298/528 segments). With gated SPECT, LEVF, end-diastolic volume (EDV), and end-diastolic volume (EDV), and end-systolic volume (ESV) were 27+-9%, 217+-73mL, respectively, and 30.8%, 195+-58mL and, 137+-48 mL with echocardiography. The correlation between gated SPECT and 2-D-echocardiography was good (r=0.76, P<0.01) for the assessment of LVEF. The correlation for EDV and ESV were also good, but with wider limits of agreement (r=0.72, P<0.01 and r=0.73, P<0.01, respectively) and significantly higher values were obtained with gated SPECT (P<0.01). Gated SPECT and 2D-echocardiography correlate well for the assessment of LV function and LV volumes. Like 2D-echocardiography, gated SPECT provides reliable information about LV function and dimension with the additional advantage of perfusion data. (author)

Factors affecting accuracy of ventricular volume and ejection fraction measured by gated Tl-201 myocardial perfusion single photon emission computed tomography

International Nuclear Information System (INIS)

Pai, Moon Sun; Yang, You Jung; Im, Ki Chun; Hong, Il Ki; Yun, Sung Cheol; Kang, Duk Hyun; Song, Jae Kwan; Moon, Dae Hyuk

2005-01-01

Systemic errors in the gated single photon emission computed tomography (SPECT) measurement of left ventricular (LV) end-diastolic volume (EDV), end-systolic volume (ESV) and ejection fraction (EF) may occur. We evaluated whether patient-related factors affected the accuracy of EDV, ESV, and EF measured by electrocardiogram-gated Tl-201 SPECT. A total of 518 patients without perfusion defects on Tl-201 SPECT or coronary artery disease were studied. EDV, ESV, and EF were measured from echocardiography and adenosine stress/redistribution gated Tl-201 SPECT using commercially available software packages (QGS and 4D-MSPECT). We identified factors affecting the accuracy of gated SPECT via multiple linear regression analysis of the differences between echocardiography and gated SPECT. Gated SPECT analyzed with QGS underestimated EDV and ESV, and overestimated EF, but 4D-MSPECT overestimated all those values (p<0.001). Independent variables that increased the difference in EDV between echocardiography and gated SPECT were decreasing LV end-diastolic wall thickness, decreasing body surface area, female sex and increasing EDV (p< 0.001). Those for ESV were decreasing LV end-systolic wall thickness, female sex, and decreasing ESV (p<0.001). Increasing end-systolic wall thickness, male sex and decreasing age were independent determinants associated with an increased difference in EF (p< 0.001). Adenosine stress SPECT showed significantly higher EDV and ESV values and a lower EF than did redistribution SPECT (p< 0.001). In determination of EF, QGS demonstrated a smaller bias than did 4D-MSPECT. However, in men with LV hypertrophy, 4D-MSPECT was superior to QGS. Systemic error by gated Tl-201 SPECT is determined by individual patient-characteristics

Amplifying genetic logic gates.

Science.gov (United States)

Bonnet, Jerome; Yin, Peter; Ortiz, Monica E; Subsoontorn, Pakpoom; Endy, Drew

2013-05-03

Organisms must process information encoded via developmental and environmental signals to survive and reproduce. Researchers have also engineered synthetic genetic logic to realize simpler, independent control of biological processes. We developed a three-terminal device architecture, termed the transcriptor, that uses bacteriophage serine integrases to control the flow of RNA polymerase along DNA. Integrase-mediated inversion or deletion of DNA encoding transcription terminators or a promoter modulates transcription rates. We realized permanent amplifying AND, NAND, OR, XOR, NOR, and XNOR gates actuated across common control signal ranges and sequential logic supporting autonomous cell-cell communication of DNA encoding distinct logic-gate states. The single-layer digital logic architecture developed here enables engineering of amplifying logic gates to control transcription rates within and across diverse organisms.

Stagnation, circulation, and erosion of granular materials through belt conveyor sluice gate

Science.gov (United States)

Pohlman, Nicholas; Moralda, Michael; Dunne, Ryan

2013-11-01

Control of flow rates in conversion reactors for discrete materials like biomass can be achieved in belt conveyors through a combination of belt speed, hopper size, and aperture opening. As material is extracted from the bottom of the storage hopper, other material cannot achieve plug flow and therefore is restricted from exiting through a sluice-gate type opening. The excess material moves vertically from the opening causing a pile up and recirculation back along the free surface of the hopper. Experimental results obtained through high speed imaging show the position of the stagnation point as well as the rate of circulation is dependent on the mass flow rate achieved and instantaneous fill level. The movement of material into the plug flow along the belt allows verification of deposition models on erodible beds rather than rigid surfaces with artificial roughness of glued particles. Similarly, the pile-up at the exit influences the efficiency of the transport affecting the narrow energy return on investment of biomass resources. The laboratory-scale behavior can therefore be translated into industrial performance metrics for increased operational efficiency. This work is supported by the NSF REU Site Operation E-Tank under award number 1156789.

Single Molecule Nanoelectrochemistry in Electrical Junctions.

Science.gov (United States)

Nichols, Richard J; Higgins, Simon J

2016-11-15

gating. This has been referred to as to a "single molecule transistor configuration" with the gate voltage being provided by the controllable potential achieved through the electrochemical double layer. It is shown how the electrolyte medium can control such gating, with ionic liquids providing more efficient gate coupling than aqueous electrolytes. Control of the conductance of viologen molecular wires can also be achieved by encapsulating the viologen redox moiety within a molecular cage, thereby controlling its immediate environment. Molecular conductance can also be gated through multiple redox states. This has been shown for the redox moiety pyrrolo-tetrathiafulvalene, which undergoes single molecule electrochemical transistor gating through three redox states in molecular junctions. Charge transport through this junction follows a two-step hopping mechanism, demonstrating the role of the redox center in electron transfer across the molecular bridge. Recent electrolyte gating studies of rigid, conjugated redox-active metal complexes with tailored terpyridine coordinating ligands and anchors are also presented. These aforementioned studies have all been performed with gold electrode contacts. The Account concludes with recent data showing that it is now possible to study single molecule electrochemical gating with nickel electrodes. This opens up new perspectives for studying interfacial charge transfer with a wide variety of other electrode materials including semiconductor electrodes and also points toward future opportunities for coupling molecular spintronics and nanoelectrochemistry.

Electrocardiographic-gated dual-isotope simultaneous acquisition SPECT using 18F-FDG and 99mTc-sestamibi to assess myocardial viability and function in a single study

International Nuclear Information System (INIS)

Matsunari, Ichiro; Matsudaira, Masamichi; Hisada, Kinichi; Kanayama, Sugako; Yoneyama, Tatsuya; Nakajima, Kenichi; Taki, Junichi; Tonami, Norihisa; Nekolla, Stephan G.

2005-01-01

Dual-isotope simultaneous acquisition single-photon emission computed tomography (DISA SPECT) with 18 F-fluorodeoxyglucose (FDG) and 99m Tc-sestamibi appears attractive for the detection of viable myocardium because it permits simultaneous assessment of glucose utilisation and perfusion. Another potential benefit of this approach is that the measurement of left ventricular (LV) function may be possible by ECG gating. The aim of this study was to test the hypothesis that both myocardial viability and LV function can be assessed by a single ECG-gated 18 F-FDG/ 99m Tc-sestamibi DISA SPECT study, based on comparison with 18 F-FDG/ 13 N-ammonia positron emission tomography (PET) and magnetic resonance imaging (MRI) as reference techniques. Thirty-three patients with prior myocardial infarction underwent ECG-gated 18 F-FDG/ 99m Tc-sestamibi DISA SPECT and 18 F-FDG/ 13 N-ammonia PET on a single day. Of these, 25 patients also underwent cine-MRI to assess LV function. The LV myocardium was divided into nine regions, and each region was classified as viable or scar using a semiquantitative visual scoring system as well as quantitative analysis. The global and regional LV function measured by gated SPECT was compared with the results of MRI. There was good agreement in respect of viability (90-96%, κ0.74-0.85) between DISA SPECT and PET by either visual or quantitative analysis. Furthermore, although both global and regional LV function measured by gated SPECT agreed with those by MRI, 99m Tc-sestamibi showed a closer correlation with MRI than did 18 F-FDG. In conclusion, ECG-gated DISA SPECT provides information on myocardial viability, as well as global and regional LV function, similar to that obtained by PET and MRI. (orig.)

Seven channel gated charge to time converter

Energy Technology Data Exchange (ETDEWEB)

Stubbs, R J; Waddoup, W D [Durham Univ. (UK)

1977-11-01

By using a hybrid integrated circuit seven independent gated charge to time converters have been constructed in a single width NIM module. Gate widths from < approximately 10 ns to approximately 300 ns are possible with a resolution of 0.25 pC, linearity is better than +-1 pC over 2.5 decades of input signal height. Together with a multichannel scaling system described in the following paper one has a very powerful multichannel gated ADC system.

1.25  GHz sine wave gating InGaAs/InP single-photon detector with a monolithically integrated readout circuit.

Science.gov (United States)

Jiang, Wen-Hao; Liu, Jian-Hong; Liu, Yin; Jin, Ge; Zhang, Jun; Pan, Jian-Wei

2017-12-15

InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. The gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and reducing the module size are important challenges for the design of such a detector system. Here we present for the first time, to the best of our knowledge, an InGaAs/InP SPD with 1.25 GHz sine wave gating (SWG) using a monolithically integrated readout circuit (MIRC). The MIRC has a size of 15  mm×15  mm and implements the miniaturization of avalanche extraction for high-frequency SWG. In the MIRC, low-pass filters and a low-noise radio frequency amplifier are integrated based on the technique of low temperature co-fired ceramic, which can effectively reduce the parasitic capacitance and extract weak avalanche signals. We then characterize the InGaAs/InP SPD to verify the functionality and reliability of the MIRC, and the SPD exhibits excellent performance with 27.5% photon detection efficiency, a 1.2 kcps dark count rate, and 9.1% afterpulse probability at 223 K and 100 ns hold-off time. With this MIRC, one can further design miniaturized high-frequency SPD modules that are highly required for practical applications.

A Grand Challenge for CMOS Scaling: Alternate Gate Dielectrics

Science.gov (United States)

Wallace, Robert M.

2001-03-01

Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.13 um complementary metal oxide semiconductor (CMOS) technology. The prospect of replacing SiO2 is a formidable task because the alternate gate dielectric must provide many properties that are, at a minimum, comparable to those of SiO2 yet with a much higher permittivity. A systematic examination of the required performance of gate dielectrics suggests that the key properties to consider in the selection an alternative gate dielectric candidate are (a) permittivity, band gap and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. We will review the performance requirements for materials associated with CMOS scaling, the challenges associated with these requirements, and the state-of-the-art in current research for alternate gate dielectrics. The requirements for process integration compatibility are remarkably demanding, and any serious candidates will emerge only through continued, intensive investigation.

Fully integrated InGaAs/InP single-photon detector module with gigahertz sine wave gating

Energy Technology Data Exchange (ETDEWEB)

Liang Xiaolei; Ma Jian; Jin Ge; Chen Zengbing; Zhang Jun; Pan Jianwei [Hefei National Laboratory for Physical Sciences at Microscale and Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Liu Jianhong; Wang Quan; Du Debing [Anhui Quantum Communication Technology Co., Ltd., Hefei, Anhui 230088 (China)

2012-08-15

InGaAs/InP single-photon avalanche diodes (SPADs) working in the regime of GHz clock rates are crucial components for the high-speed quantum key distribution (QKD). We have developed for the first time a compact, stable, and user-friendly tabletop InGaAs/InP single-photon detector system operating at a 1.25 GHz gate rate that fully integrates functions for controlling and optimizing SPAD performance. We characterize the key parameters of the detector system and test the long-term stability of the system for continuous operation of 75 h. The detector system can substantially enhance QKD performance and our present work paves the way for practical high-speed QKD applications.

Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon—germanium substrates

International Nuclear Information System (INIS)

Tiwari Pramod Kumar; Saramekala Gopi Krishna; Mukhopadhyay Anand Kumar; Dubey Sarvesh

2014-01-01

The present work gives some insight into the subthreshold behaviour of short-channel double-material-gate strained-silicon on silicon—germanium MOSFETs in terms of subthreshold swing and off-current. The formulation of subthreshold current and, thereupon, the subthreshold swing have been done by exploiting the expression of potential distribution in the channel region of the device. The dependence of the subthreshold characteristics on the device parameters, such as Ge mole fraction, gate length ratio, work function of control gate metal and gate length, has been tested in detail. The analytical models have been validated by the numerical simulation results that were obtained from the device simulation software ATLAS™ by Silvaco Inc. (semiconductor devices)

Local gate control in carbon nanotube quantum devices

Science.gov (United States)

Biercuk, Michael Jordan

This thesis presents transport measurements of carbon nanotube electronic devices operated in the quantum regime. Nanotubes are contacted by source and drain electrodes, and multiple lithographically-patterned electrostatic gates are aligned to each device. Transport measurements of device conductance or current as a function of local gate voltages reveal that local gates couple primarily to the proximal section of the nanotube, hence providing spatially localized control over carrier density along the nanotube length. Further, using several different techniques we are able to produce local depletion regions along the length of a tube. This phenomenon is explored in detail for different contact metals to the nanotube. We utilize local gating techniques to study multiple quantum dots in carbon nanotubes produced both by naturally occurring defects, and by the controlled application of voltages to depletion gates. We study double quantum dots in detail, where transport measurements reveal honeycomb charge stability diagrams. We extract values of energy-level spacings, capacitances, and interaction energies for this system, and demonstrate independent control over all relevant tunneling rates. We report rf-reflectometry measurements of gate-defined carbon nanotube quantum dots with integrated charge sensors. Aluminum rf-SETs are electrostatically coupled to carbon nanotube devices and detect single electron charging phenomena in the Coulomb blockade regime. Simultaneous correlated measurements of single electron charging are made using reflected rf power from the nanotube itself and from the rf-SET on microsecond time scales. We map charge stability diagrams for the nanotube quantum dot via charge sensing, observing Coulomb charging diamonds beyond the first order. Conductance measurements of carbon nanotubes containing gated local depletion regions exhibit plateaus as a function of gate voltage, spaced by approximately 1e2/h, the quantum of conductance for a single

DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.

Science.gov (United States)

Hong, Sejun; Rana, Abu ul Hassan Sarwar; Heo, Jun-Woo; Kim, Hyun-Seok

2015-10-01

Multiple techniques such as fluoride-based plasma treatment, a p-GaN or p-AlGaN gate contact, and a recessed gate structure have been employed to modulate the threshold voltage of AlGaN/GaN-based high-electron-mobility transistors (HEMTs). In this study, we present dual-gate AlGaN/GaN HEMTs grown on a Si substrate, which effectively shift the threshold voltage in the positive direction. Experimental data show that the threshold voltage is shifted from -4.2 V in a conventional single-gate HEMT to -2.8 V in dual-gate HEMTs. It is evident that a second gate helps improve the threshold voltage by reducing the two-dimensional electron gas density in the channel. Furthermore, the maximum drain current, maximum transconductance, and breakdown voltage values of a single-gate device are not significantly different from those of a dual-gate device. For the fabricated single- and dual-gate devices, the values of the maximum drain current are 430 mA/mm and 428 mA/mm, respectively, whereas the values of the maximum transconductance are 83 mS/mm and 75 mS/mm, respectively.

Ultra-low specific on-resistance SOI double-gate trench-type MOSFET

International Nuclear Information System (INIS)

Lei Tianfei; Luo Xiaorong; Ge Rui; Chen Xi; Wang Yuangang; Yao Guoliang; Jiang Yongheng; Zhang Bo; Li Zhaoji

2011-01-01

An ultra-low specific on-resistance (R on,sp ) silicon-on-insulator (SOI) double-gate trench-type MOSFET (DG trench MOSFET) is proposed. The MOSFET features double gates and an oxide trench: the oxide trench is in the drift region, one trench gate is inset in the oxide trench and one trench gate is extended into the buried oxide. Firstly, the double gates reduce R on,sp by forming dual conduction channels. Secondly, the oxide trench not only folds the drift region, but also modulates the electric field, thereby reducing device pitch and increasing the breakdown voltage (BV). ABV of 93 V and a R on,sp of 51.8 mΩ·mm 2 is obtained for a DG trench MOSFET with a 3 μm half-cell pitch. Compared with a single-gate SOI MOSFET (SG MOSFET) and a single-gate SOI MOSFET with an oxide trench (SG trench MOSFET), the R on,sp of the DG trench MOSFET decreases by 63.3% and 33.8% at the same BV, respectively. (semiconductor devices)

Plasmid-derived DNA Strand Displacement Gates for Implementing Chemical Reaction Networks.

Science.gov (United States)

Chen, Yuan-Jyue; Rao, Sundipta D; Seelig, Georg

2015-11-25

DNA nanotechnology requires large amounts of highly pure DNA as an engineering material. Plasmid DNA could meet this need since it is replicated with high fidelity, is readily amplified through bacterial culture and can be stored indefinitely in the form of bacterial glycerol stocks. However, the double-stranded nature of plasmid DNA has so far hindered its efficient use for construction of DNA nanostructures or devices that typically contain single-stranded or branched domains. In recent work, it was found that nicked double stranded DNA (ndsDNA) strand displacement gates could be sourced from plasmid DNA. The following is a protocol that details how these ndsDNA gates can be efficiently encoded in plasmids and can be derived from the plasmids through a small number of enzymatic processing steps. Also given is a protocol for testing ndsDNA gates using fluorescence kinetics measurements. NdsDNA gates can be used to implement arbitrary chemical reaction networks (CRNs) and thus provide a pathway towards the use of the CRN formalism as a prescriptive molecular programming language. To demonstrate this technology, a multi-step reaction cascade with catalytic kinetics is constructed. Further it is shown that plasmid-derived components perform better than identical components assembled from synthetic DNA.

High performance top-gated indium–zinc–oxide thin film transistors with in-situ formed HfO{sub 2} gate insulator

Energy Technology Data Exchange (ETDEWEB)

Song, Yang, E-mail: yang_song@brown.edu [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); Zaslavsky, A. [Department of Physics, Brown University, 182 Hope Street, Providence, RI 02912 (United States); School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States); Paine, D.C. [School of Engineering, Brown University, 184 Hope Street, Providence, RI 02912 (United States)

2016-09-01

We report on top-gated indium–zinc–oxide (IZO) thin film transistors (TFTs) with an in-situ formed HfO{sub 2} gate dielectric insulator. Building on our previous demonstration of high-performance IZO TFTs with Al{sub 2}O{sub 3}/HfO{sub 2} gate dielectric, we now report on a one-step process, in which Hf is evaporated onto the 20 nm thick IZO channel, forming a partially oxidized HfO{sub x} layer, without any additional insulator in-between. After annealing in air at 300 °C, the in-situ reaction between partially oxidized Hf and IZO forms a high quality HfO{sub 2} gate insulator with a low interface trapped charge density N{sub TC} ~ 2.3 × 10{sup 11} cm{sup −2} and acceptably low gate leakage < 3 × 10{sup −7} A/cm{sup 2} at gate voltage V{sub G} = 1 V. The annealed TFTs with gate length L{sub G} = 50 μm have high mobility ~ 95 cm{sup 2}/V ∙ s (determined via the Y-function technique), high on/off ratio ~ 10{sup 7}, near-zero threshold voltage V{sub T} = − 0.02 V, and a subthreshold swing of 0.062 V/decade, near the theoretical limit. The on-current of our proof-of-concept TFTs is relatively low, but can be improved by reducing L{sub G}, indicating that high-performance top-gated HfO{sub 2}-isolated IZO TFTs can be fabricated using a single-step in-situ dielectric formation approach. - Highlights: • High-performance indium–zinc–oxide (IZO) thin film transistors (TFTs). • Single-step in-situ dielectric formation approach simplifies fabrication process. • During anneal, reaction between HfO{sub x} and IZO channel forms a high quality HfO{sub 2} layer. • Gate insulator HfO{sub 2} shows low interface trapped charge and small gate leakage. • TFTs have high mobility, near-zero threshold voltage, and a low subthreshold swing.

Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

Science.gov (United States)

Mao, Ling-Feng; Ning, Huansheng; Huo, Zong-Liang; Wang, Jin-Yan

2015-12-01

A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (>20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs.

Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors.

Science.gov (United States)

Mao, Ling-Feng; Ning, Huansheng; Huo, Zong-Liang; Wang, Jin-Yan

2015-12-17

A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (>20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs.

A bistable electromagnetically actuated rotary gate microvalve

International Nuclear Information System (INIS)

Luharuka, Rajesh; Hesketh, Peter J

2008-01-01

Two types of rotary gate microvalves are developed for flow modulation in microfluidic systems. These microvalves have been tested for an open flow rate of up to 100 sccm and operate under a differential pressure of 6 psig with flow modulation of up to 100. The microvalve consists of a suspended gate that rotates in the plane of the chip to regulate flow through the orifice. The gate is suspended by a novel fully compliant in-plane rotary bistable micromechanism (IPRBM) that advantageously constrains the gate in all degrees of freedom except for in-plane rotational motion. Multiple inlet/outlet orifices provide flexibility of operating the microvalve in three different flow configurations. The rotary gate microvalve is switched with an external electromagnetic actuator. The suspended gate is made of a soft magnetic material and its electromagnetic actuation is based on the operating principle of a variable-reluctance stepper motor

Assessment of a quantum phase-gate operation based on nonlinear optics

International Nuclear Information System (INIS)

Rebic, S.; Ottaviani, C.; Di Giuseppe, G.; Vitali, D.; Tombesi, P.

2006-01-01

We analyze in detail the proposal for a two-qubit gate for travelling single-photon qubits recently presented by Ottaviani et al. [Phys. Rev. A 73, 010301(R) (2006)]. The scheme is based on an ensemble of five-level atoms coupled to two quantum and two classical light fields. The two quantum fields undergo cross-phase modulation induced by electromagnetically induced transparency. The performance of this two-qubit quantum phase gate for travelling single-photon qubits is thoroughly examined in the steady-state and transient regimes, by means of a full quantum treatment of the system dynamics. In the steady-state regime, we find a general trade-off between the size of the conditional phase shift and the fidelity of the gate operation. However, this trade-off can be bypassed in the transient regime, where a satisfactory gate operation is found to be possible, significantly reducing the gate operation time

Design and implementation of an efficient single layer five input majority voter gate in quantum-dot cellular automata.

Science.gov (United States)

Bahar, Ali Newaz; Waheed, Sajjad

2016-01-01

The fundamental logical element of a quantum-dot cellular automata (QCA) circuit is majority voter gate (MV). The efficiency of a QCA circuit is depends on the efficiency of the MV. This paper presents an efficient single layer five-input majority voter gate (MV5). The structure of proposed MV5 is very simple and easy to implement in any logical circuit. This proposed MV5 reduce number of cells and use conventional QCA cells. However, using MV5 a multilayer 1-bit full-adder (FA) is designed. The functional accuracy of the proposed MV5 and FA are confirmed by QCADesigner a well-known QCA layout design and verification tools. Furthermore, the power dissipation of proposed circuits are estimated, which shows that those circuits dissipate extremely small amount of energy and suitable for reversible computing. The simulation outcomes demonstrate the superiority of the proposed circuit.

A self-aligned gate definition process with submicron gaps

NARCIS (Netherlands)

Warmerdam, L.F.P.; Aarnink, Antonius A.I.; Holleman, J.; Wallinga, Hans

1989-01-01

A self-aligned gate definition process is proposed. Spacings between adjacent gates of 0.5 µm and smaller are fabricated. The spacing is realized by an edge-etch technique, combined with anisotropic plasma etching of the single poly-silicon layer. Straight gaps with minor width variation are

Evaluation of left ventricular function and volumes in patients with ischaemic cardiomyopathy: gated single-photon emission computed tomography versus two-dimensional echocardiography

International Nuclear Information System (INIS)

Vourvouri, E.C.; Poldermans, D.; Sianos, G.; Sozzi, F.B.; Schinkel, A.F.L.; Sutter, J. de; Roelandt, J.R.T.C.; Bax, J.J.; Parcharidis, G.; Valkema, R.

2001-01-01

The objective of this study was to perform a head-to-head comparison between two-dimensional (2D) echocardiography and gated single-photon emission computed tomography (SPET) for the evaluation of left ventricular (LV) function and volumes in patients with severe ischaemic LV dysfunction. Thirty-two patients with chronic ischaemic LV dysfunction [mean LV ejection fraction (EF) 25%±6%] were studied with gated SPET and 2D echocardiography. Regional wall motion was evaluated by both modalities and scored by two independent observers using a 16-segment model with a 5-point scoring system (1= normokinesia, 2= mild hypokinesia, 3= severe hypokinesia, 4= akinesia and 5= dyskinesia). LVEF and LV end-diastolic and end-systolic volumes were evaluated by 2D echocardiography using the Simpson's biplane discs method. The same parameters were calculated using quantitative gated SPET software (QGS, Cedars-Sinai Medical Center). The overall agreement between the two imaging modalities for assessment of regional wall motion was 69%. The correlations between gated SPET and 2D echocardiography for the assessment of end-diastolic and end-systolic volumes were excellent (r=0.94, P<0.01, and r=0.96, P<0.01, respectively). The correlation for LVEF was also good (r=0.83, P<0.01). In conclusion: in patients with ischaemic cardiomyopathy, close and significant relations between gated SPET and 2D echocardiography were observed for the assessment of regional and global LV function and LV volumes; gated SPET has the advantage that it provides information on both LV function/dimensions and perfusion. (orig.)

Photolithographically Patterned TiO2 Films for Electrolyte-Gated Transistors.

Science.gov (United States)

Valitova, Irina; Kumar, Prajwal; Meng, Xiang; Soavi, Francesca; Santato, Clara; Cicoira, Fabio

2016-06-15

Metal oxides constitute a class of materials whose properties cover the entire range from insulators to semiconductors to metals. Most metal oxides are abundant and accessible at moderate cost. Metal oxides are widely investigated as channel materials in transistors, including electrolyte-gated transistors, where the charge carrier density can be modulated by orders of magnitude upon application of relatively low electrical bias (2 V). Electrolyte gating offers the opportunity to envisage new applications in flexible and printed electronics as well as to improve our current understanding of fundamental processes in electronic materials, e.g. insulator/metal transitions. In this work, we employ photolithographically patterned TiO2 films as channels for electrolyte-gated transistors. TiO2 stands out for its biocompatibility and wide use in sensing, electrochromics, photovoltaics and photocatalysis. We fabricated TiO2 electrolyte-gated transistors using an original unconventional parylene-based patterning technique. By using a combination of electrochemical and charge carrier transport measurements we demonstrated that patterning improves the performance of electrolyte-gated TiO2 transistors with respect to their unpatterned counterparts. Patterned electrolyte-gated (EG) TiO2 transistors show threshold voltages of about 0.9 V, ON/OFF ratios as high as 1 × 10(5), and electron mobility above 1 cm(2)/(V s).

Parallel Transport Quantum Logic Gates with Trapped Ions.

Science.gov (United States)

de Clercq, Ludwig E; Lo, Hsiang-Yu; Marinelli, Matteo; Nadlinger, David; Oswald, Robin; Negnevitsky, Vlad; Kienzler, Daniel; Keitch, Ben; Home, Jonathan P

2016-02-26

We demonstrate single-qubit operations by transporting a beryllium ion with a controlled velocity through a stationary laser beam. We use these to perform coherent sequences of quantum operations, and to perform parallel quantum logic gates on two ions in different processing zones of a multiplexed ion trap chip using a single recycled laser beam. For the latter, we demonstrate individually addressed single-qubit gates by local control of the speed of each ion. The fidelities we observe are consistent with operations performed using standard methods involving static ions and pulsed laser fields. This work therefore provides a path to scalable ion trap quantum computing with reduced requirements on the optical control complexity.

Transport properties of a potassium-doped single-wall carbon nanotube rope

International Nuclear Information System (INIS)

Lee, R. S.; Kim, H. J.; Fischer, J. E.; Lefebvre, J.; Radosavljevic, M.; Hone, J.; Johnson, A. T.

2000-01-01

Four-probe resistance vs temperature and gate voltage are reported for an individual single-wall carbon nanotube rope before and after doping in situ with potassium. All the features in R(T) from unoriented bulk material, before and after doping, are qualitatively reproduced by the rope data. The 5.3 K conductance of the pristine rope decreases with positive gate voltage, while G vs V g becomes featureless after K doping. (c) 2000 The American Physical Society

Re-Verification of the IRHN57133SE and IRHN57250SE for Single Event Gate Rupture and Single Event Burnout

Science.gov (United States)

Scheick, Leif

2010-01-01

The vertical metal oxide semiconductor field-effect transistor (MOSFET) is a widely used power transistor onboard a spacecraft. The MOSFET is typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single event gate rupture (SEGR) or single event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. These radiation hardened devices are not immune to SEGR or SEB but, rather, can exhibit them at a much more damaging ion than their non-radiation hardened counterparts. See [1] through [5] for more information.This effort was to investigate the SEGR and SEB responses of two power MOSFETs from IR(the IRHN57133SE and the IRHN57250SE) that have recently been produced on a new fabrication line. These tests will serve as a limited verification of these parts, but it is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour.

Science.gov (United States)

Hou, Xu; Hu, Yuhang; Grinthal, Alison; Khan, Mughees; Aizenberg, Joanna

2015-03-05

Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. The ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems. But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries, a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and fouling is nearly inevitable. Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state. Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold-the pressure needed to open the pores-can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping. These capabilities allow us to dynamically modulate gas-liquid sorting in a microfluidic flow and to separate a three-phase air-water-oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.

Trapped-ion quantum logic gates based on oscillating magnetic fields.

Science.gov (United States)

Ospelkaus, C; Langer, C E; Amini, J M; Brown, K R; Leibfried, D; Wineland, D J

2008-08-29

Oscillating magnetic fields and field gradients can be used to implement single-qubit rotations and entangling multiqubit quantum gates for trapped-ion quantum information processing (QIP). With fields generated by currents in microfabricated surface-electrode traps, it should be possible to achieve gate speeds that are comparable to those of optically induced gates for realistic distances between the ion crystal and the electrode surface. Magnetic-field-mediated gates have the potential to significantly reduce the overhead in laser-beam control and motional-state initialization compared to current QIP experiments with trapped ions and will eliminate spontaneous scattering, a fundamental source of decoherence in laser-mediated gates.

MemFlash device: floating gate transistors as memristive devices for neuromorphic computing

Science.gov (United States)

Riggert, C.; Ziegler, M.; Schroeder, D.; Krautschneider, W. H.; Kohlstedt, H.

2014-10-01

Memristive devices are promising candidates for future non-volatile memory applications and mixed-signal circuits. In the field of neuromorphic engineering these devices are especially interesting to emulate neuronal functionality. Therefore, new materials and material combinations are currently investigated, which are often not compatible with Si-technology processes. The underlying mechanisms of the device often remain unclear and are paired with low device endurance and yield. These facts define the current most challenging development tasks towards a reliable memristive device technology. In this respect, the MemFlash concept is of particular interest. A MemFlash device results from a diode configuration wiring scheme of a floating gate transistor, which enables the persistent device resistance to be varied according to the history of the charge flow through the device. In this study, we investigate the scaling conditions of the floating gate oxide thickness with respect to possible applications in the field of neuromorphic engineering. We show that MemFlash cells exhibit essential features with respect to neuromorphic applications. In particular, cells with thin floating gate oxides show a limited synaptic weight growth together with low energy dissipation. MemFlash cells present an attractive alternative for state-of-art memresitive devices. The emulation of associative learning is discussed by implementing a single MemFlash cell in an analogue circuit.

MemFlash device: floating gate transistors as memristive devices for neuromorphic computing

International Nuclear Information System (INIS)

Riggert, C; Ziegler, M; Kohlstedt, H; Schroeder, D; Krautschneider, W H

2014-01-01

Memristive devices are promising candidates for future non-volatile memory applications and mixed-signal circuits. In the field of neuromorphic engineering these devices are especially interesting to emulate neuronal functionality. Therefore, new materials and material combinations are currently investigated, which are often not compatible with Si-technology processes. The underlying mechanisms of the device often remain unclear and are paired with low device endurance and yield. These facts define the current most challenging development tasks towards a reliable memristive device technology. In this respect, the MemFlash concept is of particular interest. A MemFlash device results from a diode configuration wiring scheme of a floating gate transistor, which enables the persistent device resistance to be varied according to the history of the charge flow through the device. In this study, we investigate the scaling conditions of the floating gate oxide thickness with respect to possible applications in the field of neuromorphic engineering. We show that MemFlash cells exhibit essential features with respect to neuromorphic applications. In particular, cells with thin floating gate oxides show a limited synaptic weight growth together with low energy dissipation. MemFlash cells present an attractive alternative for state-of-art memresitive devices. The emulation of associative learning is discussed by implementing a single MemFlash cell in an analogue circuit. (paper)

Audio-visual biofeedback for respiratory-gated radiotherapy: Impact of audio instruction and audio-visual biofeedback on respiratory-gated radiotherapy

International Nuclear Information System (INIS)

George, Rohini; Chung, Theodore D.; Vedam, Sastry S.; Ramakrishnan, Viswanathan; Mohan, Radhe; Weiss, Elisabeth; Keall, Paul J.

2006-01-01

Purpose: Respiratory gating is a commercially available technology for reducing the deleterious effects of motion during imaging and treatment. The efficacy of gating is dependent on the reproducibility within and between respiratory cycles during imaging and treatment. The aim of this study was to determine whether audio-visual biofeedback can improve respiratory reproducibility by decreasing residual motion and therefore increasing the accuracy of gated radiotherapy. Methods and Materials: A total of 331 respiratory traces were collected from 24 lung cancer patients. The protocol consisted of five breathing training sessions spaced about a week apart. Within each session the patients initially breathed without any instruction (free breathing), with audio instructions and with audio-visual biofeedback. Residual motion was quantified by the standard deviation of the respiratory signal within the gating window. Results: Audio-visual biofeedback significantly reduced residual motion compared with free breathing and audio instruction. Displacement-based gating has lower residual motion than phase-based gating. Little reduction in residual motion was found for duty cycles less than 30%; for duty cycles above 50% there was a sharp increase in residual motion. Conclusions: The efficiency and reproducibility of gating can be improved by: incorporating audio-visual biofeedback, using a 30-50% duty cycle, gating during exhalation, and using displacement-based gating

ECG-gated quiescent-interval single-shot MR angiography of the lower extremities: Initial experience at 3 T

International Nuclear Information System (INIS)

Knobloch, G.; Gielen, M.; Lauff, M.-T.; Romano, V.C.; Schmitt, P.; Rick, M.; Kröncke, T.J.; Huppertz, A.; Hamm, B.; Wagner, M.

2014-01-01

Aim: To evaluate the feasibility of unenhanced electrocardiography (ECG)-gated quiescent-interval single-shot magnetic resonance angiography (QISS-MRA) of the lower extremities at 3 T. Materials and methods: Twenty-five patients with known or suspected peripheral arterial disease underwent ECG-gated QISS-MRA and contrast-enhanced MRA (CE-MRA) at 3 T. Two independent readers performed a per-segment evaluation of the MRA datasets. Image quality was rated on a four-point scale (1 = excellent to 4 = non-diagnostic; presented as medians with interquartile range). Diagnostic performance of QISS-MRA was evaluated using CE-MRA as the reference standard. Results: QISS-MRA and CE-MRA of all patients were considered for analysis, resulting in 807 evaluated vessel segments for each MRA technique. Readers 1 and 2 rated image quality of QISS-MRA as diagnostic in 97.3% and 97% of the vessel segments, respectively. CE-MRA was rated diagnostic in all vessel segments. Image quality of the proximal vessel segments, including the infrarenal aorta, iliac arteries, and common femoral artery, was significantly lower on QISS-MRA compared to CE-MRA [image quality score across readers: 2 (1,3) versus 1 (1,1) p < 0.001]. In the more distal vessel segments, image quality of QISS-MRA was excellent and showed no significant difference compared to CE-MRA [image quality score across readers: 1 (1,1) versus 1 (1,1) p = 0.036]. Diagnostic performance of QISS-MRA was as follows (across readers): sensitivity: 87.5% (95% CI: 80.2–92.4%); specificity: 96.1% (95% CI: 93.6–97.6%); diagnostic accuracy: 94.9% (95% CI: 92.6–96.5%). Conclusions: QISS-MRA of the lower extremities is feasible at 3 T and provides high image quality, especially in the distal vessel segments

Design and Optimization of 22 nm Gate Length High-k/Metal gate NMOS Transistor

International Nuclear Information System (INIS)

Afifah Maheran A H; Menon P S; Shaari, S; Elgomati, H A; Salehuddin, F; Ahmad, I

2013-01-01

In this paper, we invented the optimization experiment design of a 22 nm gate length NMOS device which uses a combination of high-k material and metal as the gate which was numerically developed using an industrial-based simulator. The high-k material is Titanium dioxide (TiO 2 ), while the metal gate is Tungsten Silicide (WSi x ). The design is optimized using the L9 Taguchi method to get the optimum parameter design. There are four process parameters and two noise parameters which were varied for analyzing the effect on the threshold voltage (V th ). The objective of this experiment is to minimize the variance of V th where Taguchi's nominal-the-best signal-to-noise ratio (S/N Ratio) was used. The best settings of the process parameters were determined using Analysis of Mean (ANOM) and analysis of variance (ANOVA) to reduce the variability of V th . The results show that the V th values have least variance and the mean value can be adjusted to 0.306V ±0.027 for the NMOS device which is in line with projections by the ITRS specifications.

Universal set of quantum gates for double-dot exchange-only spin qubits with intradot coupling

International Nuclear Information System (INIS)

Michielis, M De; Ferraro, E; Fanciulli, M; Prati, E

2015-01-01

We present a universal set of quantum gate operations based on exchange-only spin qubits in a double quantum dot, where each qubit is obtained by three electrons in the (2,1) filling. Gate operations are addressed by modulating electrostatically the tunneling barrier and the energy offset between the two dots, singly and doubly occupied respectively. We propose explicit gate sequences of single qubit operations for arbitrary rotations, and the two-qubit controlled NOT gate, to complete the universal set. The unswitchable interaction between the two electrons of the doubly occupied quantum dot is taken into account. Short gate times are obtained by employing spin density functional theory simulations. (paper)

A single amino acid gates the KcsA channel

International Nuclear Information System (INIS)

Hirano, Minako; Okuno, Daichi; Onishi, Yukiko; Ide, Toru

2014-01-01

Highlights: • pH-dependent gating of the KcsA channel is regulated by the CPD. • E146 is the most essential amino acid for pH sensing by the KcsA. • The protonated-mimicking mutant, E146Q, is constitutively open independent of pH. • Minimal rearrangement of the CPD is sufficient for opening of the KcsA. - Abstract: The KcsA channel is a proton-activated potassium channel. We have previously shown that the cytoplasmic domain (CPD) acts as a pH-sensor, and the charged states of certain negatively charged amino acids in the CPD play an important role in regulating the pH-dependent gating. Here, we demonstrate the KcsA channel is constitutively open independent of pH upon mutating E146 to a neutrally charged amino acid. In addition, we found that rearrangement of the CPD following this mutation was not large. Our results indicate that minimal rearrangement of the CPD, particularly around E146, is sufficient for opening of the KcsA channel

A single amino acid gates the KcsA channel

Energy Technology Data Exchange (ETDEWEB)

Hirano, Minako, E-mail: hirano37@gpi.ac.jp [Bio Photonics Laboratory, The Graduate School for the Creation of New Photonics Industries, 1955-1 Kurematsu Nishi-ku Hamamatsu, Shizuoka 431-1202 (Japan); Laboratory for Cell Dynamics Observation, Quantitative Biology Center, RIKEN, 6-2-3 Furue-dai Suita, Osaka 565-0874 (Japan); Okuno, Daichi, E-mail: dokuno@riken.jp [Laboratory for Cell Dynamics Observation, Quantitative Biology Center, RIKEN, 6-2-3 Furue-dai Suita, Osaka 565-0874 (Japan); Onishi, Yukiko, E-mail: yonishi@riken.jp [Laboratory for Cell Dynamics Observation, Quantitative Biology Center, RIKEN, 6-2-3 Furue-dai Suita, Osaka 565-0874 (Japan); Ide, Toru, E-mail: ide@okayama-u.ac.jp [Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka Kita-ku Okayama-shi, Okayama 700-8530 (Japan)

2014-08-08

Highlights: • pH-dependent gating of the KcsA channel is regulated by the CPD. • E146 is the most essential amino acid for pH sensing by the KcsA. • The protonated-mimicking mutant, E146Q, is constitutively open independent of pH. • Minimal rearrangement of the CPD is sufficient for opening of the KcsA. - Abstract: The KcsA channel is a proton-activated potassium channel. We have previously shown that the cytoplasmic domain (CPD) acts as a pH-sensor, and the charged states of certain negatively charged amino acids in the CPD play an important role in regulating the pH-dependent gating. Here, we demonstrate the KcsA channel is constitutively open independent of pH upon mutating E146 to a neutrally charged amino acid. In addition, we found that rearrangement of the CPD following this mutation was not large. Our results indicate that minimal rearrangement of the CPD, particularly around E146, is sufficient for opening of the KcsA channel.

Effects of combined gate and ohmic recess on GaN HEMTs

Directory of Open Access Journals (Sweden)

Sunil Kumar

2016-09-01

Full Text Available AlGaN/GaN, because of their superior material properties, are most suitable semiconductor material for High Electron Mobility Transistors (HEMTs. In this work we investigated the hidden physics behind these materials and studied the effect of recess technology in AlGaN/GaN HEMTs. The device under investigation is simulated for different recess depth using Silvaco-Atlas TCAD. Recess technology improves the performance of AlGaN/GaN HEMTs. We considered three kinds of recess technology gate, ohmic and combination of gate and ohmic. Gate recess improves transconductance gm but it reduces the drain current Id of the device under investigation. Ohmic recess improves the transconductance gm but it introduces leakage current Ig in the device. In order to use AlGaN/GaN for high voltage operation, both the transconductance and the drain current should be reasonably high which is obtained by combining both gate and ohmic recess technologies. A good balance in transconductance and drain current is achieved by combining both gate and ohmic recess technologies without any leakage current.

SEMICONDUCTOR DEVICES: Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

Science.gov (United States)

Chia-Song, Wu; Hsing-Chung, Liu

2009-11-01

This paper investigates the feasibility of using a lanthanum oxide thin film (La2O3) with a high dielectric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT. An E/D mode pHEMT in a single chip was realized by selecting the appropriate La2O3 thickness. The thin La2O3 film was characterized: its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. La2O3 exhibited good thermal stability after post-deposition annealing at 200, 400 and 600 °C because of its high binding-energy (835.6 eV). Experimental results clearly demonstrated that the La2O3 thin film was thermally stable. The DC and RF characteristics of Pt/La2O3/Ti/Au gate and conventional Pt/Ti/Au gate pHEMTs were examined. The measurements indicated that the transistor with the Pt/La2O3/Ti/Au gate had a higher breakdown voltage and lower gate leakage current. Accordingly, the La2O3 thin film is a potential high-k material for use as a gate dielectric to improve electrical performance and the thermal effect in high-power applications.

Enhanced transconductance in a double-gate graphene field-effect transistor

Science.gov (United States)

Hwang, Byeong-Woon; Yeom, Hye-In; Kim, Daewon; Kim, Choong-Ki; Lee, Dongil; Choi, Yang-Kyu

2018-03-01

Multi-gate transistors, such as double-gate, tri-gate and gate-all-around transistors are the most advanced Si transistor structure today. Here, a genuine double-gate transistor with a graphene channel is experimentally demonstrated. The top and bottom gates of the double-gate graphene field-effect transistor (DG GFET) are electrically connected so that the conductivity of the graphene channel can be modulated simultaneously by both the top and bottom gate. A single-gate graphene field-effect transistor (SG GFET) with only the top gate is also fabricated as a control device. For systematical analysis, the transfer characteristics of both GFETs were measured and compared. Whereas the maximum transconductance of the SG GFET was 17.1 μS/μm, that of the DG GFET was 25.7 μS/μm, which is approximately a 50% enhancement. The enhancement of the transconductance was reproduced and comprehensively explained by a physics-based compact model for GFETs. The investigation of the enhanced transfer characteristics of the DG GFET in this work shows the possibility of a multi-gate architecture for high-performance graphene transistor technology.

Low-voltage organic field-effect transistors based on novel high-κ organometallic lanthanide complex for gate insulating materials

Directory of Open Access Journals (Sweden)

Qi Liu

2014-08-01

Full Text Available A novel high-κ organometallic lanthanide complex, Eu(tta3L (tta=2-thenoyltrifluoroacetonate, L = 4,5-pinene bipyridine, is used as gate insulating material to fabricate low-voltage pentacene field-effect transistors (FETs. The optimized gate insulator exhibits the excellent properties such as low leakage current density, low surface roughness, and high dielectric constant. When operated under a low voltage of −5 V, the pentacene FET devices show the attractive electrical performance, e.g. carrier mobility (μFET of 0.17 cm2 V−1 s−1, threshold voltage (Vth of −0.9 V, on/off current ratio of 5 × 103, and subthreshold slope (SS of 1.0 V dec−1, which is much better than that of devices obtained on conventional 300 nm SiO2 substrate (0.13 cm2 V−1 s−1, −7.3 V and 3.1 V dec−1 for μFET, Vth and SS value when operated at −30 V. These results indicate that this kind of high-κ organometallic lanthanide complex becomes a promising candidate as gate insulator for low-voltage organic FETs.

Universal Fault-Tolerant Gates on Concatenated Stabilizer Codes

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Theodore J. Yoder

2016-09-01

Full Text Available It is an oft-cited fact that no quantum code can support a set of fault-tolerant logical gates that is both universal and transversal. This no-go theorem is generally responsible for the interest in alternative universality constructions including magic state distillation. Widely overlooked, however, is the possibility of nontransversal, yet still fault-tolerant, gates that work directly on small quantum codes. Here, we demonstrate precisely the existence of such gates. In particular, we show how the limits of nontransversality can be overcome by performing rounds of intermediate error correction to create logical gates on stabilizer codes that use no ancillas other than those required for syndrome measurement. Moreover, the logical gates we construct, the most prominent examples being Toffoli and controlled-controlled-Z, often complete universal gate sets on their codes. We detail such universal constructions for the smallest quantum codes, the 5-qubit and 7-qubit codes, and then proceed to generalize the approach. One remarkable result of this generalization is that any nondegenerate stabilizer code with a complete set of fault-tolerant single-qubit Clifford gates has a universal set of fault-tolerant gates. Another is the interaction of logical qubits across different stabilizer codes, which, for instance, implies a broadly applicable method of code switching.

The gate oxide integrity of CVD tungsten polycide

International Nuclear Information System (INIS)

Wu, N.W.; Su, W.D.; Chang, S.W.; Tseng, M.F.

1988-01-01

CVD tungsten polycide has been demonstrated as a good gate material in recent very large scale integration (VLSI) technology. CVD tungsten silicide offers advantages of low resistivity, high temperature stability and good step coverage. On the other hand, the polysilicon underlayer preserves most characteristics of the polysilicon gate and acts as a stress buffer layer to absorb part of the thermal stress origin from the large thermal expansion coefficient of tungsten silicide. Nevertheless, the gate oxide of CVD tungsten polycide is less stable or reliable than that of polysilicon gate. In this paper, the gate oxide integrity of CVD tungsten polycide with various thickness combinations and different thermal processes have been analyzed by several electrical measurements including breakdown yield, breakdown fluence, room temperature TDDB, I-V characteristics, electron traps and interface state density

Rapid gated Thallium-201 perfusion SPECT - clinically feasible?

International Nuclear Information System (INIS)

Wadhwa, S.S.; Mansberg, R.; Fernandes, V.B.; Wilkinson, D.; Abatti, D.

1998-01-01

Full text: Standard dose energy window optimised Thallium-201 (Tl-201) SPECT has about half the counts of a standard dose from Technetium-99m Sestamibi (Tc99m-Mibi) gated perfusion SPECT. This study investigates the clinical feasibility of rapid energy window optimised Tl-201 gated perfusion SPECT (gated-TI) and compares quantitative left ventricular ejection fraction (LVEF) and visually assessed image quality for wall motion and thickening to analogous values obtained from Tc99m-Mibi gated perfusion SPECT (gated - mibi). Methods: We studied 60 patients with a rest gated Tl-201 SPECT (100 MBq, 77KeV peak, 34% window, 20 sec/projection) followed by a post stress gated Sestamibi SPECT (1GBq, 140KeV, 20% window, 20 sec/projection) separate dual isotope protocol. LVEF quantitation was performed using commercially available software (SPECTEF, General Electric). Visual grading of image quality for wall thickening and motion was performed using a three-point scale (excellent, good and poor). Results: LVEF for gated Tl-201 SPECT was 59.6 ± 12.0% (Mean ± SD). LVEF for gated Sestamibi SPECT was 60.4 ±11.4% (Mean ± SD). These were not significantly different (P=0.27, T-Test). There was good correlation (r=0.9) between gated-TI and gated-mibi LVEF values. The quality of gated-Tl images was ranked as excellent, good and poor in 12, 50 and 38% of the patients respectively. Image quality was better in gated-mibi SPECT, with ratings of 12, 62 and 26% respectively. Conclusion: Rapid gated Thallium-201 acquisition with energy window optimisation can be effectively performed on majority of patients and offers the opportunity to assess not only myocardial perfusion and function, as with Technetium based agents, but also viability using a single day one isotope protocol

Reduction of skin effect losses in double-level-T-gate structure

Energy Technology Data Exchange (ETDEWEB)

Mikulics, M., E-mail: m.mikulics@fz-juelich.de; Hardtdegen, H.; Arango, Y. C.; Adam, R.; Fox, A.; Grützmacher, D. [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich (Germany); Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, D-52425 Jülich (Germany); Gregušová, D.; Novák, J. [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava (Slovakia); Stanček, S. [Department of Nuclear Physic and Technique, Slovak University of Technology, SK-81219 Bratislava (Slovakia); Kordoš, P. [Institute of Electronics and Photonics, Slovak University of Technology, SK-81219 Bratislava (Slovakia); Sofer, Z. [Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, Prague 6 (Czech Republic); Juul, L.; Marso, M. [Faculté des Sciences, de la Technologie et de la Communication, Université du Luxembourg, L-1359 Luxembourg (Luxembourg)

2014-12-08

We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length L{sub g} = 200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 μm gate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of f{sub max} value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions.

Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

Energy Technology Data Exchange (ETDEWEB)

Hou, X; Hu, YH; Grinthal, A; Khan, M; Aizenberg, J

2015-03-04

Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. The ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems(1-10). But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries(6,11-17), a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and fouling is nearly inevitable(11,12). Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state. Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold-the pressure needed to open the pores-can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping. These capabilities allow us to dynamically modulate gas-liquid sorting in a microfluidic flow and to separate a three-phase air-water-oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.

The Aharonov-Bohm effect in a side-gated graphene ring

International Nuclear Information System (INIS)

Huefner, Magdalena; Molitor, Francoise; Jacobsen, Arnhild; Pioda, Alessandro; Stampfer, Christoph; Ensslin, Klaus; Ihn, Thomas

2010-01-01

We investigate the magnetoresistance of a side-gated ring structure etched out of single-layer graphene. We observe Aharonov-Bohm oscillations with about 5% visibility. We are able to change the relative phases of the wave functions in the interfering paths and induce phase jumps of π in the Aharonov-Bohm oscillations by changing the voltage applied to the side gate or the back gate. The observed data can be interpreted within existing models for 'dirty metals'.

Fast quantum logic gates with trapped-ion qubits

Science.gov (United States)

Schäfer, V. M.; Ballance, C. J.; Thirumalai, K.; Stephenson, L. J.; Ballance, T. G.; Steane, A. M.; Lucas, D. M.

2018-03-01

Quantum bits (qubits) based on individual trapped atomic ions are a promising technology for building a quantum computer. The elementary operations necessary to do so have been achieved with the required precision for some error-correction schemes. However, the essential two-qubit logic gate that is used to generate quantum entanglement has hitherto always been performed in an adiabatic regime (in which the gate is slow compared with the characteristic motional frequencies of the ions in the trap), resulting in logic speeds of the order of 10 kilohertz. There have been numerous proposals of methods for performing gates faster than this natural ‘speed limit’ of the trap. Here we implement one such method, which uses amplitude-shaped laser pulses to drive the motion of the ions along trajectories designed so that the gate operation is insensitive to the optical phase of the pulses. This enables fast (megahertz-rate) quantum logic that is robust to fluctuations in the optical phase, which would otherwise be an important source of experimental error. We demonstrate entanglement generation for gate times as short as 480 nanoseconds—less than a single oscillation period of an ion in the trap and eight orders of magnitude shorter than the memory coherence time measured in similar calcium-43 hyperfine qubits. The power of the method is most evident at intermediate timescales, at which it yields a gate error more than ten times lower than can be attained using conventional techniques; for example, we achieve a 1.6-microsecond-duration gate with a fidelity of 99.8 per cent. Faster and higher-fidelity gates are possible at the cost of greater laser intensity. The method requires only a single amplitude-shaped pulse and one pair of beams derived from a continuous-wave laser. It offers the prospect of combining the unrivalled coherence properties, operation fidelities and optical connectivity of trapped-ion qubits with the submicrosecond logic speeds that are usually

Efficient Nonlocal M-Control and N-Target Controlled Unitary Gate Using Non-symmetric GHZ States

Science.gov (United States)

Chen, Li-Bing; Lu, Hong

2018-03-01

Efficient local implementation of a nonlocal M-control and N-target controlled unitary gate is considered. We first show that with the assistance of two non-symmetric qubit(1)-qutrit(N) Greenberger-Horne-Zeilinger (GHZ) states, a nonlocal 2-control and N-target controlled unitary gate can be constructed from 2 local two-qubit CNOT gates, 2 N local two-qutrit conditional SWAP gates, N local qutrit-qubit controlled unitary gates, and 2 N single-qutrit gates. At each target node, the two third levels of the two GHZ target qutrits are used to expose one and only one initial computational state to the local qutrit-qubit controlled unitary gate, instead of being used to hide certain states from the conditional dynamics. This scheme can be generalized straightforwardly to implement a higher-order nonlocal M-control and N-target controlled unitary gate by using M non-symmetric qubit(1)-qutrit(N) GHZ states as quantum channels. Neither the number of the additional levels of each GHZ target particle nor that of single-qutrit gates needs to increase with M. For certain realistic physical systems, the total gate time may be reduced compared with that required in previous schemes.

Formation of multipartite entanglement using random quantum gates

International Nuclear Information System (INIS)

Most, Yonatan; Shimoni, Yishai; Biham, Ofer

2007-01-01

The formation of multipartite quantum entanglement by repeated operation of one- and two-qubit gates is examined. The resulting entanglement is evaluated using two measures: the average bipartite entanglement and the Groverian measure. A comparison is made between two geometries of the quantum register: a one-dimensional chain in which two-qubit gates apply only locally between nearest neighbors and a nonlocal geometry in which such gates may apply between any pair of qubits. More specifically, we use a combination of random single-qubit rotations and a fixed two-qubit gate such as the controlled-phase gate. It is found that in the nonlocal geometry the entanglement is generated at a higher rate. In both geometries, the Groverian measure converges to its asymptotic value more slowly than the average bipartite entanglement. These results are expected to have implications on different proposed geometries of future quantum computers with local and nonlocal interactions between the qubits

Generic two-qubit photonic gates implemented by number-resolving photodetection

International Nuclear Information System (INIS)

Uskov, Dmitry B.; Smith, A. Matthew; Kaplan, Lev

2010-01-01

We combine numerical optimization techniques [Uskov et al., Phys. Rev. A 79, 042326 (2009)] with symmetries of the Weyl chamber to obtain optimal implementations of generic linear-optical Knill-Laflamme-Milburn-type two-qubit entangling gates. We find that while any two-qubit controlled-U gate, including controlled-NOT (CNOT) and controlled-sign gates, can be implemented using only two ancilla resources with a success probability S>0.05, a generic SU(4) operation requires three unentangled ancilla photons, with success S>0.0063. Specifically, we obtain a maximal success probability close to 0.0072 for the B gate. We show that single-shot implementation of a generic SU(4) gate offers more than an order of magnitude increase in the success probability and a two-fold reduction in overhead ancilla resources compared to standard triple-CNOT and double-B gate decompositions.

Bounding quantum gate error rate based on reported average fidelity

International Nuclear Information System (INIS)

Sanders, Yuval R; Wallman, Joel J; Sanders, Barry C

2016-01-01

Remarkable experimental advances in quantum computing are exemplified by recent announcements of impressive average gate fidelities exceeding 99.9% for single-qubit gates and 99% for two-qubit gates. Although these high numbers engender optimism that fault-tolerant quantum computing is within reach, the connection of average gate fidelity with fault-tolerance requirements is not direct. Here we use reported average gate fidelity to determine an upper bound on the quantum-gate error rate, which is the appropriate metric for assessing progress towards fault-tolerant quantum computation, and we demonstrate that this bound is asymptotically tight for general noise. Although this bound is unlikely to be saturated by experimental noise, we demonstrate using explicit examples that the bound indicates a realistic deviation between the true error rate and the reported average fidelity. We introduce the Pauli distance as a measure of this deviation, and we show that knowledge of the Pauli distance enables tighter estimates of the error rate of quantum gates. (fast track communication)

Proton Conducting Graphene Oxide/Chitosan Composite Electrolytes as Gate Dielectrics for New-Concept Devices.

Science.gov (United States)

Feng, Ping; Du, Peifu; Wan, Changjin; Shi, Yi; Wan, Qing

2016-09-30

New-concept devices featuring the characteristics of ultralow operation voltages and low fabrication cost have received increasing attention recently because they can supplement traditional Si-based electronics. Also, organic/inorganic composite systems can offer an attractive strategy to combine the merits of organic and inorganic materials into promising electronic devices. In this report, solution-processed graphene oxide/chitosan composite film was found to be an excellent proton conducting electrolyte with a high specific capacitance of ~3.2 μF/cm 2 at 1.0 Hz, and it was used to fabricate multi-gate electric double layer transistors. Dual-gate AND logic operation and two-terminal diode operation were realized in a single device. A two-terminal synaptic device was proposed, and some important synaptic behaviors were emulated, which is interesting for neuromorphic systems.

Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane.

Science.gov (United States)

Zhu, Li Qiang; Wan, Chang Jin; Gao, Ping Qi; Liu, Yang Hui; Xiao, Hui; Ye, Ji Chun; Wan, Qing

2016-08-24

Ion-conducting materials have received considerable attention for their applications in fuel cells, electrochemical devices, and sensors. Here, flexible indium zinc oxide (InZnO) synaptic transistors with multiple presynaptic inputs gated by proton-conducting phosphorosilicate glass-based electrolyte films are fabricated on ultrathin Si membranes. Transient characteristics of the proton gated InZnO synaptic transistors are investigated, indicating stable proton-gating behaviors. Short-term synaptic plasticities are mimicked on the proposed proton-gated synaptic transistors. Furthermore, synaptic integration regulations are mimicked on the proposed synaptic transistor networks. Spiking logic modulations are realized based on the transition between superlinear and sublinear synaptic integration. The multigates coupled flexible proton-gated oxide synaptic transistors may be interesting for neuroinspired platforms with sophisticated spatiotemporal information processing.

Gate valve performance prediction

International Nuclear Information System (INIS)

Harrison, D.H.; Damerell, P.S.; Wang, J.K.; Kalsi, M.S.; Wolfe, K.J.

1994-01-01

The Electric Power Research Institute is carrying out a program to improve the performance prediction methods for motor-operated valves. As part of this program, an analytical method to predict the stem thrust required to stroke a gate valve has been developed and has been assessed against data from gate valve tests. The method accounts for the loads applied to the disc by fluid flow and for the detailed mechanical interaction of the stem, disc, guides, and seats. To support development of the method, two separate-effects test programs were carried out. One test program determined friction coefficients for contacts between gate valve parts by using material specimens in controlled environments. The other test program investigated the interaction of the stem, disc, guides, and seat using a special fixture with full-sized gate valve parts. The method has been assessed against flow-loop and in-plant test data. These tests include valve sizes from 3 to 18 in. and cover a considerable range of flow, temperature, and differential pressure. Stem thrust predictions for the method bound measured results. In some cases, the bounding predictions are substantially higher than the stem loads required for valve operation, as a result of the bounding nature of the friction coefficients in the method

2-D analytical modeling of subthreshold current and subthreshold swing for ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs

Science.gov (United States)

Goel, Ekta; Singh, Kunal; Singh, Balraj; Kumar, Sanjay; Jit, Satyabrata

2017-09-01

In this paper, the subthreshold behavior of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs has been analyzed by means of subthreshold current and subthreshold swing. The surface potential based formulation of subthreshold current and subthreshold swing is done by solving the 2-D Poisson's equations in the channel region using parabolic approximation method. The dependence of subthreshold characteristics on various device parameters such as gate length ratio, Ge mole fraction, peak doping concentration, projected range, straggle parameter etc. has been studied. The modeling results are found to be well matched with the simulation data obtained by a 2-D device simulator, ATLAS™, from SILVACO.

Simultaneous control of thermoelectric properties in p- and n-type materials by electric double-layer gating: New design for thermoelectric device

Science.gov (United States)

Takayanagi, Ryohei; Fujii, Takenori; Asamitsu, Atsushi

2015-05-01

We report a novel design of a thermoelectric device that can control the thermoelectric properties of p- and n-type materials simultaneously by electric double-layer gating. Here, p-type Cu2O and n-type ZnO were used as the positive and negative electrodes of the electric double-layer capacitor structure. When a gate voltage was applied between the two electrodes, holes and electrons accumulated on the surfaces of Cu2O and ZnO, respectively. The thermopower was measured by applying a thermal gradient along the accumulated layer on the electrodes. We demonstrate here that the accumulated layers worked as a p-n pair of the thermoelectric device.

Multi-target-qubit unconventional geometric phase gate in a multi-cavity system.

Science.gov (United States)

Liu, Tong; Cao, Xiao-Zhi; Su, Qi-Ping; Xiong, Shao-Jie; Yang, Chui-Ping

2016-02-22

Cavity-based large scale quantum information processing (QIP) may involve multiple cavities and require performing various quantum logic operations on qubits distributed in different cavities. Geometric-phase-based quantum computing has drawn much attention recently, which offers advantages against inaccuracies and local fluctuations. In addition, multiqubit gates are particularly appealing and play important roles in QIP. We here present a simple and efficient scheme for realizing a multi-target-qubit unconventional geometric phase gate in a multi-cavity system. This multiqubit phase gate has a common control qubit but different target qubits distributed in different cavities, which can be achieved using a single-step operation. The gate operation time is independent of the number of qubits and only two levels for each qubit are needed. This multiqubit gate is generic, e.g., by performing single-qubit operations, it can be converted into two types of significant multi-target-qubit phase gates useful in QIP. The proposal is quite general, which can be used to accomplish the same task for a general type of qubits such as atoms, NV centers, quantum dots, and superconducting qubits.

Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.

Science.gov (United States)

Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J

2016-06-09

Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, by using AlN deposited by plasma enhanced atomic layer deposition (PEALD) as an interfacial layer, top-gate dielectrics as thin as 6 nm for single-layer MoS2 transistors are demonstrated. The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2 transistor is attributed to the low border trap density of the AlN interfacial layer, as well as the small gate leakage and high dielectric strength of AlN/Al2O3 dielectric stack.

100-nm gate lithography for double-gate transistors

Science.gov (United States)

Krasnoperova, Azalia A.; Zhang, Ying; Babich, Inna V.; Treichler, John; Yoon, Jung H.; Guarini, Kathryn; Solomon, Paul M.

2001-09-01

The double gate field effect transistor (FET) is an exploratory device that promises certain performance advantages compared to traditional CMOS FETs. It can be scaled down further than the traditional devices because of the greater electrostatic control by the gates on the channel (about twice as short a channel length for the same gate oxide thickness), has steeper sub-threshold slope and about double the current for the same width. This paper presents lithographic results for double gate FET's developed at IBM's T. J. Watson Research Center. The device is built on bonded wafers with top and bottom gates self-aligned to each other. The channel is sandwiched between the top and bottom polysilicon gates and the gate length is defined using DUV lithography. An alternating phase shift mask was used to pattern gates with critical dimensions of 75 nm, 100 nm and 125 nm in photoresist. 50 nm gates in photoresist have also been patterned by 20% over-exposure of nominal 100 nm lines. No trim mask was needed because of a specific way the device was laid out. UV110 photoresist from Shipley on AR-3 antireflective layer were used. Process windows, developed and etched patterns are presented.

Single-crystal growth of ceria-based materials

International Nuclear Information System (INIS)

Ulbrich, Gregor

2015-01-01

In this work it could be shown that Skull-Melting is a suitable method for growing ceria single crystals. Twenty different ceria-based single crystals could be manufactured. It was possible to dope ceria single crystals with Gd, Sm, Y, Zr, Ti, Ta, and Pr in different concentrations. Also co-doping with the named metals was realized. However, there remain some problems for growing ceria-based single crystals by Skull-Melting. As ignition metal zirconium was used because no ceria-based material works well. For that reason all single crystals show small zirconium contamination. Another problem is the formation of oxygen by the heat-induced reduction of ceria during the melting process. Because of that the skull of sintered material is often destroyed by gas pressure. This problem had to be solved individually for every single crystal. The obtained single crystals were characterized using different methods. To ensure the single crystal character the y were examined by Laue diffraction. All manufactured crystals are single crystals. Also powder diffraction patterns of the milled and oxidized samples were measured. For the determination of symmetry and metric the structural parameters were analyzed by the Rietveld method. All synthesized materials crystallize in space group Fm-3m known from calcium fluoride. The cubic lattice parameter a was determined for all crystals. In the case of series with different cerium and zirconium concentrations a linear correlation between cerium content and cubic lattice parameter was detected. The elemental composition was determined by WDX. All crystals show a homogeneous elemental distribution. The oxygen content was calculated because the WDX method isn't useful for determination.

Gate-Tunable Spin Exchange Interactions and Inversion of Magnetoresistance in Single Ferromagnetic ZnO Nanowires.

Science.gov (United States)

Modepalli, Vijayakumar; Jin, Mi-Jin; Park, Jungmin; Jo, Junhyeon; Kim, Ji-Hyun; Baik, Jeong Min; Seo, Changwon; Kim, Jeongyong; Yoo, Jung-Woo

2016-04-26

Electrical control of ferromagnetism in semiconductor nanostructures offers the promise of nonvolatile functionality in future semiconductor spintronics. Here, we demonstrate a dramatic gate-induced change of ferromagnetism in ZnO nanowire (NW) field-effect transistors (FETs). Ferromagnetism in our ZnO NWs arose from oxygen vacancies, which constitute deep levels hosting unpaired electron spins. The magnetic transition temperature of the studied ZnO NWs was estimated to be well above room temperature. The in situ UV confocal photoluminescence (PL) study confirmed oxygen vacancy mediated ferromagnetism in the studied ZnO NW FET devices. Both the estimated carrier concentration and temperature-dependent conductivity reveal the studied ZnO NWs are at the crossover of the metal-insulator transition. In particular, gate-induced modulation of the carrier concentration in the ZnO NW FET significantly alters carrier-mediated exchange interactions, which causes even inversion of magnetoresistance (MR) from negative to positive values. Upon sweeping the gate bias from -40 to +50 V, the MRs estimated at 2 K and 2 T were changed from -11.3% to +4.1%. Detailed analysis on the gate-dependent MR behavior clearly showed enhanced spin splitting energy with increasing carrier concentration. Gate-voltage-dependent PL spectra of an individual NW device confirmed the localization of oxygen vacancy-induced spins, indicating that gate-tunable indirect exchange coupling between localized magnetic moments played an important role in the remarkable change of the MR.

Low-voltage organic field-effect transistors based on novel high-κ organometallic lanthanide complex for gate insulating materials

Energy Technology Data Exchange (ETDEWEB)

Liu, Qi; Li, Yi; Zhang, Yang; Song, You, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Wang, Xizhang, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Hu, Zheng [Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Provincial Lab for Nanotechnology, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China. High-Tech Research Institute of Nanjing University (Suzhou), Suzhou 215123 (China); Sun, Huabin; Li, Yun, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Shi, Yi [School of Electronic Science and Engineering and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093 (China)

2014-08-15

A novel high-κ organometallic lanthanide complex, Eu(tta){sub 3}L (tta=2-thenoyltrifluoroacetonate, L = 4,5-pinene bipyridine), is used as gate insulating material to fabricate low-voltage pentacene field-effect transistors (FETs). The optimized gate insulator exhibits the excellent properties such as low leakage current density, low surface roughness, and high dielectric constant. When operated under a low voltage of −5 V, the pentacene FET devices show the attractive electrical performance, e.g. carrier mobility (μ{sub FET}) of 0.17 cm{sup 2} V{sup −1} s{sup −1}, threshold voltage (V{sub th}) of −0.9 V, on/off current ratio of 5 × 10{sup 3}, and subthreshold slope (SS) of 1.0 V dec{sup −1}, which is much better than that of devices obtained on conventional 300 nm SiO{sub 2} substrate (0.13 cm{sup 2} V{sup −1} s{sup −1}, −7.3 V and 3.1 V dec{sup −1} for μ{sub FET}, V{sub th} and SS value when operated at −30 V). These results indicate that this kind of high-κ organometallic lanthanide complex becomes a promising candidate as gate insulator for low-voltage organic FETs.

Single event upset susceptibilities of latchup immune CMOS process programmable gate arrays

Science.gov (United States)

Koga, R.; Crain, W. R.; Crawford, K. B.; Hansel, S. J.; Lau, D. D.; Tsubota, T. K.

Single event upsets (SEU) and latchup susceptibilities of complementary metal oxide semiconductor programmable gate arrays (CMOS PPGA's) were measured at the Lawrence Berkeley Laboratory 88-in. cyclotron facility with Xe (603 MeV), Cu (290 MeV), and Ar (180 MeV) ion beams. The PPGA devices tested were those which may be used in space. Most of the SEU measurements were taken with a newly constructed tester called the Bus Access Storage and Comparison System (BASACS) operating via a Macintosh II computer. When BASACS finds that an output does not match a prerecorded pattern, the state of all outputs, position in the test cycle, and other necessary information is transmitted and stored in the Macintosh. The upset rate was kept between 1 and 3 per second. After a sufficient number of errors are stored, the test is stopped and the total fluence of particles and total errors are recorded. The device power supply current was closely monitored to check for occurrence of latchup. Results of the tests are presented, indicating that some of the PPGA's are good candidates for selected space applications.

Gating-ML: XML-based gating descriptions in flow cytometry.

Science.gov (United States)

Spidlen, Josef; Leif, Robert C; Moore, Wayne; Roederer, Mario; Brinkman, Ryan R

2008-12-01

The lack of software interoperability with respect to gating due to lack of a standardized mechanism for data exchange has traditionally been a bottleneck, preventing reproducibility of flow cytometry (FCM) data analysis and the usage of multiple analytical tools. To facilitate interoperability among FCM data analysis tools, members of the International Society for the Advancement of Cytometry (ISAC) Data Standards Task Force (DSTF) have developed an XML-based mechanism to formally describe gates (Gating-ML). Gating-ML, an open specification for encoding gating, data transformations and compensation, has been adopted by the ISAC DSTF as a Candidate Recommendation. Gating-ML can facilitate exchange of gating descriptions the same way that FCS facilitated for exchange of raw FCM data. Its adoption will open new collaborative opportunities as well as possibilities for advanced analyses and methods development. The ISAC DSTF is satisfied that the standard addresses the requirements for a gating exchange standard.

Time-gated single-photon detection module with 110 ps transition time and up to 80 MHz repetition rate

Energy Technology Data Exchange (ETDEWEB)

Buttafava, Mauro, E-mail: mauro.buttafava@polimi.it; Boso, Gianluca; Ruggeri, Alessandro; Tosi, Alberto [Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Dalla Mora, Alberto [Politecnico di Milano, Dipartimento di Fisica, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy)

2014-08-15

We present the design and characterization of a complete single-photon counting module capable of time-gating a silicon single-photon avalanche diode with ON and OFF transition times down to 110 ps, at repetition rates up to 80 MHz. Thanks to this sharp temporal filtering of incoming photons, it is possible to reject undesired strong light pulses preceding (or following) the signal of interest, allowing to increase the dynamic range of optical acquisitions up to 7 decades. A complete experimental characterization of the module highlights its very flat temporal response, with a time resolution of the order of 30 ps. The instrument is fully user-configurable via a PC interface and can be easily integrated in any optical setup, thanks to its small and compact form factor.

Time-gated single-photon detection module with 110 ps transition time and up to 80 MHz repetition rate

International Nuclear Information System (INIS)

Buttafava, Mauro; Boso, Gianluca; Ruggeri, Alessandro; Tosi, Alberto; Dalla Mora, Alberto

2014-01-01

We present the design and characterization of a complete single-photon counting module capable of time-gating a silicon single-photon avalanche diode with ON and OFF transition times down to 110 ps, at repetition rates up to 80 MHz. Thanks to this sharp temporal filtering of incoming photons, it is possible to reject undesired strong light pulses preceding (or following) the signal of interest, allowing to increase the dynamic range of optical acquisitions up to 7 decades. A complete experimental characterization of the module highlights its very flat temporal response, with a time resolution of the order of 30 ps. The instrument is fully user-configurable via a PC interface and can be easily integrated in any optical setup, thanks to its small and compact form factor

Monte Carlo calculations of the neutron coincidence gate utilisation factor for passive neutron coincidence counting

International Nuclear Information System (INIS)

Bourva, L.C.A.; Croft, S.

1999-01-01

The general purpose neutron-photon-electron Monte Carlo N-Particle code, MCNP TM , has been used to simulate the neutronic characteristics of the on-site laboratory passive neutron coincidence counter to be installed, under Euratom Safeguards Directorate supervision, at the Sellafield reprocessing plant in Cumbria, UK. This detector is part of a series of nondestructive assay instruments to be installed for the accurate determination of the plutonium content of nuclear materials. The present work focuses on one aspect of this task, namely, the accurate calculation of the coincidence gate utilisation factor. This parameter is an important term in the interpretative model used to analyse the passive neutron coincidence count data acquired using pulse train deconvolution electronics based on the shift register technique. It accounts for the limited proportion of neutrons detected within the time interval for which the electronics gate is open. The Monte Carlo code MCF, presented in this work, represents a new evaluation technique for the estimation of gate utilisation factors. It uses the die-away profile of a neutron coincidence chamber generated either by MCNP TM , or by other means, to simulate the neutron detection arrival time pattern originating from independent spontaneous fission events. A shift register simulation algorithm, embedded in the MCF code, then calculates the coincidence counts scored within the electronics gate. The gate utilisation factor is then deduced by dividing the coincidence counts obtained with that obtained in the same Monte Carlo run, but for an ideal detection system with a coincidence gate utilisation factor equal to unity. The MCF code has been benchmarked against analytical results calculated for both single and double exponential die-away profiles. These results are presented along with the development of the closed form algebraic expressions for the two cases. Results of this validity check showed very good agreement. On this

Ballistic transport of graphene pnp junctions with embedded local gates

International Nuclear Information System (INIS)

Nam, Seung-Geol; Ki, Dong-Keun; Kim, Youngwook; Kim, Jun Sung; Lee, Hu-Jong; Park, Jong Wan

2011-01-01

We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither deposition of dielectric material on the graphene nor electron-beam irradiation, we obtained high-quality graphene pnp devices without degradation of the carrier mobility even in the local-gate region. The corresponding increased mean free path leads to the observation of ballistic and phase-coherent transport across a local gate 130 nm wide, which is about an order of magnitude wider than reported previously. Furthermore, in our scheme, we demonstrated independent control of the carrier density in the local-gate region, with a conductance map very much distinct from those of top-gated devices. This was caused by the electric field arising from the global back gate being strongly screened by the embedded local gate. Our scheme allows the realization of ideal multipolar graphene junctions with ballistic carrier transport.

Light-effect transistor (LET) with multiple independent gating controls for optical logic gates and optical amplification

Science.gov (United States)

Marmon, Jason; Rai, Satish; Wang, Kai; Zhou, Weilie; Zhang, Yong

The pathway for CMOS technology beyond the 5-nm technology node remains unclear for both physical and technological reasons. A new transistor paradigm is required. A LET (Marmon et. al., Front. Phys. 2016, 4, No. 8) offers electronic-optical hybridization at the component level, and is capable of continuing Moore's law to the quantum scale. A LET overcomes a FET's fabrication complexity, e.g., physical gate and doping, by employing optical gating and photoconductivity, while multiple independent, optical gates readily realize unique functionalities. We report LET device characteristics and novel digital and analog applications, such as optical logic gates and optical amplification. Prototype CdSe-nanowire-based LETs, incorporating an M-S-M structure, show output and transfer characteristics resembling advanced FETs, e.g., on/off ratios up to 106 with a source-drain voltage of 1.43V, gate-power of 260nW, and a subthreshold swing of 0.3nW/decade (excluding losses). A LET has potential for high-switching (THz) speeds and extremely low-switching energies (aJ) in the ballistic transport region. Our work offers new electronic-optical integration strategies for high speed and low energy computing approaches, which could potentially be extended to other materials and devices.

Upgrading the Center for Lightweighting Automotive Materials and Processing - a GATE Center of Excellence at the University of Michigan-Dearborn

Energy Technology Data Exchange (ETDEWEB)

Mallick, P. K.

2012-08-30

The Center for Lightweighting Materials and Processing (CLAMP) was established in September 1998 with a grant from the Department of Energy’s Graduate Automotive Technology Education (GATE) program. The center received the second round of GATE grant in 2005 under the title “Upgrading the Center for Lightweighting Automotive Materials and Processing”. Using the two grants, the Center has successfully created 10 graduate level courses on lightweight automotive materials, integrated them into master’s and PhD programs in Automotive Systems Engineering, and offered them regularly to the graduate students in the program. In addition, the Center has created a web-based lightweight automotive materials database, conducted research on lightweight automotive materials and organized seminars/symposia on lightweight automotive materials for both academia and industry. The faculty involved with the Center has conducted research on a variety of topics related to design, testing, characterization and processing of lightweight materials for automotive applications and have received numerous research grants from automotive companies and government agencies to support their research. The materials considered included advanced steels, light alloys (aluminum, magnesium and titanium) and fiber reinforced polymer composites. In some of these research projects, CLAMP faculty have collaborated with industry partners and students have used the research facilities at industry locations. The specific objectives of the project during the current funding period (2005 – 2012) were as follows: (1) develop new graduate courses and incorporate them in the automotive systems engineering curriculum (2) improve and update two existing courses on automotive materials and processing (3) upgrade the laboratory facilities used by graduate students to conduct research (4) expand the Lightweight Automotive Materials Database to include additional materials, design case studies and make it more

Respiratory gated beam delivery cannot facilitate margin reduction, unless combined with respiratory correlated image guidance

DEFF Research Database (Denmark)

Korreman, S.S.; Boyer, A.L.; Juhler-Nøttrup, Trine

2008-01-01

PURPOSE/OBJECTIVE: In radiotherapy of targets moving with respiration, beam gating is offered as a means of reducing the target motion. The purpose of this study is to evaluate the safe magnitude of margin reduction for respiratory gated beam delivery. MATERIALS/METHODS: The study is based on data...... for 17 lung cancer patients in separate protocols at Rigshospitalet and Stanford Cancer Center. Respiratory curves for external optical markers and implanted fiducials were collected using equipment based on the RPM system (Varian Medical Systems). A total of 861 respiratory curves represented external...... measurements over 30 fraction treatment courses for 10 patients, and synchronous external/internal measurements in single sessions for seven patients. Variations in respiratory amplitude (simulated coaching) and external/internal phase shifts were simulated by perturbation with realistic values. Variations...

Teleportation-based Toffoli gate on cluster states via the Bell state analysis

International Nuclear Information System (INIS)

Guo Ying; Huang Dazu; Lee, Moon Ho

2013-01-01

An optical Toffoli gate is demonstrated via teleportations on the six-qubit entangling cluster state generated from single-qubit photons. It is implemented on the basis of entanglement swapping of the combined quantum system with three independent Bell state measurements. The output of this gate is then restored by suitable local operations and classical communications. We evaluate the implementing performance of the Toffoli gate fidelity for the operation process in different computational bases. (paper)

Respiratory gated beam delivery cannot facilitate margin reduction, unless combined with respiratory correlated image guidance

International Nuclear Information System (INIS)

Korreman, Stine S.; Juhler-Nottrup, Trine; Boyer, Arthur L.

2008-01-01

Purpose/objective: In radiotherapy of targets moving with respiration, beam gating is offered as a means of reducing the target motion. The purpose of this study is to evaluate the safe magnitude of margin reduction for respiratory gated beam delivery. Materials/methods: The study is based on data for 17 lung cancer patients in separate protocols at Rigshospitalet and Stanford Cancer Center. Respiratory curves for external optical markers and implanted fiducials were collected using equipment based on the RPM system (Varian Medical Systems). A total of 861 respiratory curves represented external measurements over 30 fraction treatment courses for 10 patients, and synchronous external/internal measurements in single sessions for seven patients. Variations in respiratory amplitude (simulated coaching) and external/internal phase shifts were simulated by perturbation with realistic values. Variations were described by medians and standard deviations (SDs) of position distributions of the markers. Gating windows (35% duty cycle) were retrospectively applied to the respiratory data for each session, mimicking the use of commercially available gating systems. Medians and SDs of gated data were compared to those of ungated data, to assess potential margin reductions. Results: External respiratory data collected over entire treatment courses showed SDs from 1.6 to 8.1 mm, the major part arising from baseline variations. The gated data had SDs from 1.5 to 7.7 mm, with a mean reduction of 0.3 mm (6%). Gated distributions were more skewed than ungated, and in a few cases a marginal miss of gated respiration would be found even if no margin reduction was applied. Regularization of breathing amplitude to simulate coaching did not alter these results significantly. Simulation of varying phase shifts between internal and external respiratory signals showed that the SDs of gated distributions were the same as for the ungated or smaller, but the median values were markedly shifted

GATE Monte Carlo simulation of dose distribution using MapReduce in a cloud computing environment.

Science.gov (United States)

Liu, Yangchuan; Tang, Yuguo; Gao, Xin

2017-12-01

The GATE Monte Carlo simulation platform has good application prospects of treatment planning and quality assurance. However, accurate dose calculation using GATE is time consuming. The purpose of this study is to implement a novel cloud computing method for accurate GATE Monte Carlo simulation of dose distribution using MapReduce. An Amazon Machine Image installed with Hadoop and GATE is created to set up Hadoop clusters on Amazon Elastic Compute Cloud (EC2). Macros, the input files for GATE, are split into a number of self-contained sub-macros. Through Hadoop Streaming, the sub-macros are executed by GATE in Map tasks and the sub-results are aggregated into final outputs in Reduce tasks. As an evaluation, GATE simulations were performed in a cubical water phantom for X-ray photons of 6 and 18 MeV. The parallel simulation on the cloud computing platform is as accurate as the single-threaded simulation on a local server and the simulation correctness is not affected by the failure of some worker nodes. The cloud-based simulation time is approximately inversely proportional to the number of worker nodes. For the simulation of 10 million photons on a cluster with 64 worker nodes, time decreases of 41× and 32× were achieved compared to the single worker node case and the single-threaded case, respectively. The test of Hadoop's fault tolerance showed that the simulation correctness was not affected by the failure of some worker nodes. The results verify that the proposed method provides a feasible cloud computing solution for GATE.

Heralded quantum controlled-phase gates with dissipative dynamics in macroscopically distant resonators

Science.gov (United States)

Qin, Wei; Wang, Xin; Miranowicz, Adam; Zhong, Zhirong; Nori, Franco

2017-07-01

Heralded near-deterministic multiqubit controlled-phase gates with integrated error detection have recently been proposed by Borregaard et al. [Phys. Rev. Lett. 114, 110502 (2015), 10.1103/PhysRevLett.114.110502]. This protocol is based on a single four-level atom (a heralding quartit) and N three-level atoms (operational qutrits) coupled to a single-resonator mode acting as a cavity bus. Here we generalize this method for two distant resonators without the cavity bus between the heralding and operational atoms. Specifically, we analyze the two-qubit controlled-Z gate and its multiqubit-controlled generalization (i.e., a Toffoli-like gate) acting on the two-lowest levels of N qutrits inside one resonator, with their successful actions being heralded by an auxiliary microwave-driven quartit inside the other resonator. Moreover, we propose a circuit-quantum-electrodynamics realization of the protocol with flux and phase qudits in linearly coupled transmission-line resonators with dissipation. These methods offer a quadratic fidelity improvement compared to cavity-assisted deterministic gates.

Catheter-based time-gated near-infrared fluorescence/OCT imaging system

Science.gov (United States)

Lu, Yuankang; Abran, Maxime; Cloutier, Guy; Lesage, Frédéric

2018-02-01

We developed a new dual-modality intravascular imaging system based on fast time-gated fluorescence intensity imaging and spectral domain optical coherence tomography (SD-OCT) for the purpose of interventional detection of atherosclerosis. A pulsed supercontinuum laser was used for fluorescence and OCT imaging. A double-clad fiber (DCF)- based side-firing catheter was designed and fabricated to have a 23 μm spot size at a 2.2 mm working distance for OCT imaging. Its single-mode core is used for OCT, while its inner cladding transports fluorescence excitation light and collects fluorescent photons. The combination of OCT and fluorescence imaging was achieved by using a DCF coupler. For fluorescence detection, we used a time-gated technique with a novel single-photon avalanche diode (SPAD) working in an ultra-fast gating mode. A custom-made delay chip was integrated in the system to adjust the delay between the excitation laser pulse and the SPAD gate-ON window. This technique allowed to detect fluorescent photons of interest while rejecting most of the background photons, thus leading to a significantly improved signal to noise ratio (SNR). Experiments were carried out in turbid media mimicking tissue with an indocyanine green (ICG) inclusion (1 mM and 100 μM) to compare the time-gated technique and the conventional continuous detection technique. The gating technique increased twofold depth sensitivity, and tenfold SNR at large distances. The dual-modality imaging capacity of our system was also validated with a silicone-based tissue-mimicking phantom.

A high performance gate drive for large gate turn off thyristors

Energy Technology Data Exchange (ETDEWEB)

Szilagyi, C.P.

1993-01-01

Past approaches to gate turn-off (GTO) gating are application oriented, inefficient and dissipate power even when inactive. They allow the gate to avalanch, and do not reduce GTO turn-on and turn-off losses. A new approach is proposed which will allow modular construction and adaptability to large GTOs in the 50 amp to 2000 amp range. The proposed gate driver can be used in large voltage source and current source inverters and other power converters. The approach consists of a power metal-oxide-silicon field effect transistor (MOSFET) technology gating unit, with associated logic and supervisory circuits and an isolated flyback converter as the dc power source for the gating unit. The gate driver formed by the gating unit and the flyback converter is designed for 4000 V isolation. Control and supervisory signals are exchanged between the gate driver and the remote control system via fiber optics. The gating unit has programmable front-porch current amplitude and pulse-width, programmable closed-loop controlled back-porch current, and a turn-off switch capable of supplying negative gate current at demand as a function of peak controllable forward anode current. The GTO turn-on, turn-off and gate avalanch losses are reduced to a minimum. The gate driver itself has minimum operating losses. Analysis, design and practical realization are reported. 19 refs., 54 figs., 1 tab.

Trapped-ion quantum logic gates based on oscillating magnetic fields

Science.gov (United States)

Ospelkaus, Christian; Langer, Christopher E.; Amini, Jason M.; Brown, Kenton R.; Leibfried, Dietrich; Wineland, David J.

2009-05-01

Oscillating magnetic fields and field gradients can be used to implement single-qubit rotations and entangling multiqubit quantum gates for trapped-ion quantum information processing. With fields generated by currents in microfabricated surface-electrode traps, it should be possible to achieve gate speeds that are comparable to those of optically induced gates for realistic distances between the ions and the electrode surface. Magnetic-field-mediated gates have the potential to significantly reduce the overhead in laser-beam control and motional-state initialization compared to current QIP experiments with trapped ions and will eliminate spontaneous scattering decoherence, a fundamental source of decoherence in laser-mediated gates. A potentially beneficial environment for the implementation of such schemes is a cryogenic ion trap, because small length scale traps with low motional heating rates can be realized. A cryogenic ion trap experiment is currently under construction at NIST.

Enhancement of the saturation mobility in a ferroelectric-gated field-effect transistor by the surface planarization of ferroelectric film

Energy Technology Data Exchange (ETDEWEB)

Kim, Woo Young, E-mail: semigumi@kaist.ac.kr [Department of Mechanical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of); Jeon, Gwang-Jae; Kang, In-Ku; Shim, Hyun Bin; Lee, Hee Chul [Department of Electrical Engineering, Korea Advanced Institute of Science and Technology (KAIST), 373-1, Guseong-dong, Yuseong-gu, Daejeon 305-701 (Korea, Republic of)

2015-09-30

Ferroelectricity refers to the property of a dielectric material to undergo spontaneous polarization which originates from the crystalline phase. Hence, ferroelectric materials have a certain degree of surface roughness when they are formed as a thin film. A high degree of surface roughness may cause unintended phenomena when the ferroelectric material is used in electronic devices. Specifically, the quality of subsequently deposited film could be affected by the rough surface. The present study reports that the surface roughness of ferroelectric polymer film can be reduced by a double-spin-coating method of a solution, with control of the solubility of the solution. At an identical thickness of 350 nm, double-spin-coated ferroelectric film has a root-mean-square roughness of only 3 nm, while for single-spin-coated ferroelectric film this value is approximately 16 nm. A ferroelectric-gated field-effect transistor was fabricated using the proposed double-spin-coating method, showing a maximum saturation mobility as much as seven-fold than that of a transistor fabricated with single-spin-coated ferroelectric film. The enhanced saturation mobility could be explained by the Poole–Frenkel conduction mechanism. The proposed method to reduce the surface roughness of ferroelectric film would be useful for high performance organic electronic devices, including crystalline-phase dielectric film. - Highlights: • Single and double-layer solution-processed polymer ferroelectric films were obtained. • Adjusting the solvent solubility allows making double-layer ferroelectric (DF) films. • The DF film has a smoother surface than single-layer ferroelectric (SF) film. • DF-gated transistor has faster saturation mobility than SF-based transistor. • Solvent solubility adjustment led to higher performance organic devices.

Gating of human ClC-2 chloride channels and regulation by carboxy-terminal domains.

Science.gov (United States)

Garcia-Olivares, Jennie; Alekov, Alexi; Boroumand, Mohammad Reza; Begemann, Birgit; Hidalgo, Patricia; Fahlke, Christoph

2008-11-15

Eukaryotic ClC channels are dimeric proteins with each subunit forming an individual protopore. Single protopores are gated by a fast gate, whereas the slow gate is assumed to control both protopores through a cooperative movement of the two carboxy-terminal domains. We here study the role of the carboxy-terminal domain in modulating fast and slow gating of human ClC-2 channels, a ubiquitously expressed ClC-type chloride channel involved in transepithelial solute transport and in neuronal chloride homeostasis. Partial truncation of the carboxy-terminus abolishes function of ClC-2 by locking the channel in a closed position. However, unlike other isoforms, its complete removal preserves function of ClC-2. ClC-2 channels without the carboxy-terminus exhibit fast and slow gates that activate and deactivate significantly faster than in WT channels. In contrast to the prevalent view, a single carboxy-terminus suffices for normal slow gating, whereas both domains regulate fast gating of individual protopores. Our findings demonstrate that the carboxy-terminus is not strictly required for slow gating and that the cooperative gating resides in other regions of the channel protein. ClC-2 is expressed in neurons and believed to open at negative potentials and increased internal chloride concentrations after intense synaptic activity. We propose that the function of the ClC-2 carboxy-terminus is to slow down the time course of channel activation in order to stabilize neuronal excitability.

An Al₂O₃ Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials.

Science.gov (United States)

Yang, Hang; Qin, Shiqiao; Zheng, Xiaoming; Wang, Guang; Tan, Yuan; Peng, Gang; Zhang, Xueao

2017-09-22

We fabricated 70 nm Al₂O₃ gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al₂O₃/Si substrate is superior to that on a traditional 300 nm SiO₂/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al₂O₃/Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a higher dielectric constant. Furthermore, this substrate is also suitable for other 2D materials, such as WS₂, and can enhance the transconductance remarkably by 61.3 times. These results demonstrate a new and ideal substrate for the fabrication of 2D materials-based electronic logic devices.

High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

Science.gov (United States)

Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

2018-04-18

A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits

International Nuclear Information System (INIS)

Renteria, J.; Jiang, C.; Yan, Z.; Samnakay, R.; Goli, P.; Pope, T. R.; Salguero, T. T.; Wickramaratne, D.; Lake, R. K.; Khitun, A. G.; Balandin, A. A.

2014-01-01

We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe 2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe 2 –Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials

All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits

Science.gov (United States)

Renteria, J.; Samnakay, R.; Jiang, C.; Pope, T. R.; Goli, P.; Yan, Z.; Wickramaratne, D.; Salguero, T. T.; Khitun, A. G.; Lake, R. K.; Balandin, A. A.

2014-01-01

We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe2-Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach

Science.gov (United States)

Lauenstein, Jean-Marie

2011-01-01

Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR

ZIF-8 gate tuning via terminal group modification: a computational study

KAUST Repository

Zheng, Bin

2016-06-24

Tuning the pore structure of zeolitic imidazolate frameworks (ZIFs) enables unique control of their material properties. In this work, we used computational methods to examine the gate structure of ZIF-8 tuned by substitution terminal groups. The substitution position and electron affinity of the added groups were shown to be key factors in gate size. Electrostatic interactions are responsible for the variation in gate opening. These results suggest that the post-modification of terminal group in ZIFs can be used to finely tune the pore gate, opening up new strategies in the design of ZIFs with desired properties.

HE GATES OF HORN AND IVORY: A GEOGRAPHICAL MYTH

Directory of Open Access Journals (Sweden)

Jörg Schulte

2016-12-01

Full Text Available The articles proposes a new interpretation of the Homeric myth of the gates of horn and ivory that occurs in Book 19 of the Odyssey. It first argues that horn (the material of the southern gate in neoplatonic commentaries can be found in the sign of Capricornus. More complex is the argument that also ivory (the material of the northern gate in neoplatonic commentaries is derived from astronomical myths: the myths discussed are the myth of Adonis (beginning with the story about the ivory statue carved by Pygmalion, the myths of the Erymanthian, Studia Litterarum. Vol. 1, no 3–4 Jörg Schulte 83 the Calydonian, and the Ephesian boars, the myth of Orion, and the myth of the constellation ursa major. An enquiry into the occurance of ivory in Greek mythology leads to the hypothesis that the constellation ursa major was identified with a boar (with ivory tusks. The hypothesis implies that the gates of horn and ivory were already at the times of Homer understood as an astronomical myth that described the northernmost and southernmost points of the sky.

Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications

International Nuclear Information System (INIS)

Zhuge, Jing; Huang, Ru; Wang, Yangyuan; Verhulst, Anne S; Vandenberghe, William G; Dehaene, Wim; Groeseneken, Guido

2011-01-01

This paper investigates the potential of tunnel field-effect transistors (TFETs), with emphasis on short-gate TFETs, by simulation for low-power digital applications having a supply voltage lower than 0.5 V. A transient study shows that the tunneling current has a negligible contribution in charging and discharging the gate capacitance of TFETs. In spite of a higher resistance region in the short-gate TFET, the gate (dis)charging speed still meets low-voltage application requirements. A circuit analysis is performed on short-gate TFETs with different materials, such as Si, Ge and heterostructures in terms of voltage overshoot, delay, static power, energy consumption and energy delay product (EDP). These results are compared to MOSFET and full-gate TFET performance. It is concluded that short-gate heterostructure TFETs (Ge–source for nTFET, In 0.6 Ga 0.4 As–source for pTFET) are promising candidates to extend the supply voltage to lower than 0.5 V because they combine the advantage of a low Miller capacitance, due to the short-gate structures, and strong drive current in TFETs, due to the narrow bandgap material in the source. At a supply voltage of 0.4 V and for an EOT and channel length of 0.6 nm and 40 nm, respectively, a three-stage inverter chain based on short-gate heterostructure TFETs saves 40% energy consumption per cycle at the same delay and shows 60%–75% improvement of EDP at the same static power, compared to its full-gate counterpart. When compared to the MOSFET, better EDP can be achieved in the heterostructure TFET especially at low static power consumption

A novel optical gating method for laser gated imaging

Science.gov (United States)

Ginat, Ran; Schneider, Ron; Zohar, Eyal; Nesher, Ofer

2013-06-01

For the past 15 years, Elbit Systems is developing time-resolved active laser-gated imaging (LGI) systems for various applications. Traditional LGI systems are based on high sensitive gated sensors, synchronized to pulsed laser sources. Elbit propriety multi-pulse per frame method, which is being implemented in LGI systems, improves significantly the imaging quality. A significant characteristic of the LGI is its ability to penetrate a disturbing media, such as rain, haze and some fog types. Current LGI systems are based on image intensifier (II) sensors, limiting the system in spectral response, image quality, reliability and cost. A novel propriety optical gating module was developed in Elbit, untying the dependency of LGI system on II. The optical gating module is not bounded to the radiance wavelength and positioned between the system optics and the sensor. This optical gating method supports the use of conventional solid state sensors. By selecting the appropriate solid state sensor, the new LGI systems can operate at any desired wavelength. In this paper we present the new gating method characteristics, performance and its advantages over the II gating method. The use of the gated imaging systems is described in a variety of applications, including results from latest field experiments.

Nonlocal multi-target controlled–controlled gate using Greenberger–Horne–Zeilinger channel and qutrit catalysis

International Nuclear Information System (INIS)

Chen Li-Bing; Lu Hong

2015-01-01

We present a scheme for implementing locally a nonlocal N-target controlled–controlled gate with unit probability of success by harnessing two (N+1)-qubit Greenberger–Horne–Zeilinger (GHZ) states as quantum channel and N qutrits as catalyser. The quantum network that implements this nonlocal (N+2)-body gate is built entirely of local single-body and two-body gates, and has only (3N+2) two-body gates. This result suggests that both the computational depth of quantum network and the quantum resources required to perform this nonlocal gate might be significantly reduced. This scheme can be generalized straightforwardly to implement a nonlocal N-target and M-control qubits gate. (paper)

Theory of signal and noise in double-gated nanoscale electronic pH sensors

Energy Technology Data Exchange (ETDEWEB)

Go, Jonghyun; Nair, Pradeep R.; Alam, Muhammad A. [School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907 (United States)

2012-08-01

The maximum sensitivity of classical nanowire (NW)-based pH sensors is defined by the Nernst limit of 59 mV/pH. For typical noise levels in ultra-small single-gated nanowire sensors, the signal-to-noise ratio is often not sufficient to resolve pH changes necessary for a broad range of applications. Recently, a new class of double-gated devices was demonstrated to offer apparent 'super-Nernstian' response (>59 mV/pH) by amplifying the original pH signal through innovative biasing schemes. However, the pH-sensitivity of these nanoscale devices as a function of biasing configurations, number of electrodes, and signal-to-noise ratio (SNR) remains poorly understood. Even the basic question such as 'Do double-gated sensors actually resolve smaller changes in pH compared to conventional single-gated sensors in the presence of various sources of noise?' remains unanswered. In this article, we provide a comprehensive numerical and analytical theory of signal and noise of double-gated pH sensors to conclude that, while the theoretical lower limit of pH-resolution does not improve for double-gated sensors, this new class of sensors does improve the (instrument-limited) pH resolution.

Universal Quantum Computing with Measurement-Induced Continuous-Variable Gate Sequence in a Loop-Based Architecture.

Science.gov (United States)

Takeda, Shuntaro; Furusawa, Akira

2017-09-22

We propose a scalable scheme for optical quantum computing using measurement-induced continuous-variable quantum gates in a loop-based architecture. Here, time-bin-encoded quantum information in a single spatial mode is deterministically processed in a nested loop by an electrically programmable gate sequence. This architecture can process any input state and an arbitrary number of modes with almost minimum resources, and offers a universal gate set for both qubits and continuous variables. Furthermore, quantum computing can be performed fault tolerantly by a known scheme for encoding a qubit in an infinite-dimensional Hilbert space of a single light mode.

Single-channel kinetics of BK (Slo1 channels

Directory of Open Access Journals (Sweden)

Yanyan eGeng

2015-01-01

Full Text Available Single-channel kinetics has proven a powerful tool to reveal information about the gating mechanisms that control the opening and closing of ion channels. This introductory review focuses on the gating of large conductance Ca2+- and voltage-activated K+ (BK or Slo1 channels at the single-channel level. It starts with single-channel current records and progresses to presentation and analysis of single-channel data and the development of gating mechanisms in terms of discrete state Markov (DSM models. The DSM models are formulated in terms of the tetrameric modular structure of BK channels, consisting of a central transmembrane pore-gate domain (PGD attached to four surrounding transmembrane voltage sensing domains (VSD and a large intracellular cytosolic domain (CTD, also referred to as the gating ring. The modular structure and data analysis shows that the Ca2+ and voltage dependent gating considered separately can each be approximated by 10-state two-tiered models with 5 closed states on the upper tier and 5 open states on the lower tier. The modular structure and joint Ca2+ and voltage dependent gating are consistent with a 50 state two-tiered model with 25 closed states on the upper tier and 25 open states on the lower tier. Adding an additional tier of brief closed (flicker states to the 10-state or 50-state models improved the description of the gating. For fixed experimental conditions a channel would gate in only a subset of the potential number of states. The detected number of states and the correlations between adjacent interval durations are consistent with the tiered models. The examined models can account for the single-channel kinetics and the bursting behavior of gating. Ca2+ and voltage activate BK channels by predominantly increasing the effective opening rate of the channel with a smaller decrease in the effective closing rate. Ca2+ and depolarization thus activate by mainly destabilizing the closed states.

Feasibility of epicardial adipose tissue quantification in non-ECG-gated low-radiation-dose CT: comparison with prospectively ECG-gated cardiac CT

Energy Technology Data Exchange (ETDEWEB)

Simon-Yarza, Isabel; Viteri-Ramirez, Guillermo; Saiz-Mendiguren, Ramon; Slon-Roblero, Pedro J.; Paramo, Maria [Dept. of Radiology, Clinica Univ. de Navarra, Pamplona (Spain); Bastarrika, Gorka [Dept. of Radiology, Clinica Univ. de Navarra, Pamplona (Spain); Cardiac Imaging Unit, Clinica Univ. de Navarra, Pamplona (Spain)], e-mail: bastarrika@unav.es

2012-06-15

Background: Epicardial adipose tissue (EAT) is an important indicator of cardiovascular risk. This parameter is generally assessed on ECG-gated computed tomography (CT) images. Purpose: To evaluate feasibility and reliability of EAT quantification on non-gated thoracic low-radiation-dose CT examinations with respect to prospectively ECG-gated cardiac CT acquisition. Material and Methods: Sixty consecutive asymptomatic smokers (47 men; mean age 64 {+-} 9.8 years) underwent low-dose CT of the chest and prospectively ECG-gated cardiac CT acquisitions (64-slice dual-source CT). The two examinations were reconstructed with the same range, field of view, slice thickness, and convolution algorithm. Two independent observers blindly quantified EAT volume using commercially available software. Data were compared with paired sample Student t-test, concordance correlation coefficients (CCC), and Bland-Altman plots. Results: No statistically significant difference was observed for EAT volume quantification with low-dose-CT (141.7 {+-} 58.3 mL) with respect to ECG-gated CT (142.7 {+-} 57.9 mL). Estimation of CCC showed almost perfect concordance between the two techniques for EAT-volume assessment (CCC, 0.99; mean difference, 0.98 {+-} 5.1 mL). Inter-observer agreement for EAT volume estimation was CCC: 0.96 for low-dose-CT examinations and 0.95 for ECG-gated CT. Conclusion: Non-gated low-dose CT allows quantifying EAT with almost the same concordance and reliability as using dedicated prospectively ECG-gated cardiac CT acquisition protocols.

Feasibility of epicardial adipose tissue quantification in non-ECG-gated low-radiation-dose CT: comparison with prospectively ECG-gated cardiac CT

International Nuclear Information System (INIS)

Simon-Yarza, Isabel; Viteri-Ramirez, Guillermo; Saiz-Mendiguren, Ramon; Slon-Roblero, Pedro J.; Paramo, Maria; Bastarrika, Gorka

2012-01-01

Background: Epicardial adipose tissue (EAT) is an important indicator of cardiovascular risk. This parameter is generally assessed on ECG-gated computed tomography (CT) images. Purpose: To evaluate feasibility and reliability of EAT quantification on non-gated thoracic low-radiation-dose CT examinations with respect to prospectively ECG-gated cardiac CT acquisition. Material and Methods: Sixty consecutive asymptomatic smokers (47 men; mean age 64 ± 9.8 years) underwent low-dose CT of the chest and prospectively ECG-gated cardiac CT acquisitions (64-slice dual-source CT). The two examinations were reconstructed with the same range, field of view, slice thickness, and convolution algorithm. Two independent observers blindly quantified EAT volume using commercially available software. Data were compared with paired sample Student t-test, concordance correlation coefficients (CCC), and Bland-Altman plots. Results: No statistically significant difference was observed for EAT volume quantification with low-dose-CT (141.7 ± 58.3 mL) with respect to ECG-gated CT (142.7 ± 57.9 mL). Estimation of CCC showed almost perfect concordance between the two techniques for EAT-volume assessment (CCC, 0.99; mean difference, 0.98 ± 5.1 mL). Inter-observer agreement for EAT volume estimation was CCC: 0.96 for low-dose-CT examinations and 0.95 for ECG-gated CT. Conclusion: Non-gated low-dose CT allows quantifying EAT with almost the same concordance and reliability as using dedicated prospectively ECG-gated cardiac CT acquisition protocols

Quantum logic gates generated by SC-charge qubits coupled to a resonator

International Nuclear Information System (INIS)

Obada, A-S F; Hessian, H A; Mohamed, A-B A; Homid, Ali H

2012-01-01

We propose some quantum logic gates by using SC-charge qubits coupled to a resonator to study two types of quantum operation. By applying a classical magnetic field with the flux, a simple rotation on the target qubit is generated. Single and two-qubit gates of quantum logic gates are realized. Two-qubit joint operations are firstly generated by applying a classical magnetic field with the flux, and secondly by applying a classical magnetic field with the flux when qubits are placed a quarter of the distance along the resonator. A short discussion of fidelity is given to prove the success of the operations in implementing these gates. (paper)

SWNT array resonant gate MOS transistor.

Science.gov (United States)

Arun, A; Campidelli, S; Filoramo, A; Derycke, V; Salet, P; Ionescu, A M; Goffman, M F

2011-02-04

We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.

SWNT array resonant gate MOS transistor

International Nuclear Information System (INIS)

Arun, A; Salet, P; Ionescu, A M; Campidelli, S; Filoramo, A; Derycke, V; Goffman, M F

2011-01-01

We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.

Proposal for multiple-valued logic in gated semiconducting carbon nanotubes

Science.gov (United States)

Dragoman, D.; Dragoman, M.

2006-06-01

The proposal for an implementation of multi-valued logical devices based on excited states of a single quantum well is analysed for various configurations of carbon nanotube quantum wells, which were already experimentally demonstrated at room temperature. The best configuration, which gathers all the advantages of multi-valued logic, is a gated carbon nanotube device where the quantum well is imprinted via DC voltages applied on gate electrodes.

Robust Hadamard gate for optical and ion trap holonomic quantum computers

OpenAIRE

Kuvshinov, V. I.; Kuzmin, A. V.

2005-01-01

We consider one possible implementation of Hadamard gate for optical and ion trap holonomic quantum computers. The expression for its fidelity determining the gate stability with respect to the errors in the single-mode squeezing parameter control is analytically derived. We demonstrate by means of this expression the cancellation of the squeezing control errors up to the fourth order on their magnitude.

Dynamic gating window for compensation of baseline shift in respiratory-gated radiation therapy

International Nuclear Information System (INIS)

Pepin, Eric W.; Wu Huanmei; Shirato, Hiroki

2011-01-01

Purpose: To analyze and evaluate the necessity and use of dynamic gating techniques for compensation of baseline shift during respiratory-gated radiation therapy of lung tumors. Methods: Motion tracking data from 30 lung tumors over 592 treatment fractions were analyzed for baseline shift. The finite state model (FSM) was used to identify the end-of-exhale (EOE) breathing phase throughout each treatment fraction. Using duty cycle as an evaluation metric, several methods of end-of-exhale dynamic gating were compared: An a posteriori ideal gating window, a predictive trend-line-based gating window, and a predictive weighted point-based gating window. These methods were evaluated for each of several gating window types: Superior/inferior (SI) gating, anterior/posterior beam, lateral beam, and 3D gating. Results: In the absence of dynamic gating techniques, SI gating gave a 39.6% duty cycle. The ideal SI gating window yielded a 41.5% duty cycle. The weight-based method of dynamic SI gating yielded a duty cycle of 36.2%. The trend-line-based method yielded a duty cycle of 34.0%. Conclusions: Dynamic gating was not broadly beneficial due to a breakdown of the FSM's ability to identify the EOE phase. When the EOE phase was well defined, dynamic gating showed an improvement over static-window gating.

A two-dimensional (2D) analytical subthreshold swing and transconductance model of underlap dual-material double-gate (DMDG) MOSFET for analog/RF applications

Science.gov (United States)

Narendar, Vadthiya; Rai, Saurabh; Tiwari, Siddharth; Mishra, R. A.

2016-12-01

The double-gate (DG) metal-oxide-semiconductor field effect transistors (MOSFETs) are the choice of technology in sub -100 nm regime of leading microelectronics industry. To enhance the analog and RF performance of DG MOSFET, an underlap dual-material (DM) DG MOSFET device structure has been considered because, it has the advantages of both underlap as well as that of dual-material gate (DMG). A 2D analytical surface potential, subthreshold current, subthreshold swing as well as transconductance modelling of underlap DMDG MOSFET has been done by solving the Poisson's equation. It has also been found that, numerically simulated data approves the analytically modelled data with commendable accuracy. As underlap length (Lun) increases, a substantial reduction of subthreshold current due to enhanced gate control over channel regime is observed. DMG structure facilitates to improve the average velocity of carriers which leads to superior drive current of the device. The underlap DMDG MOSFET device structure demonstrates an ameliorated subthreshold characteristic. The analog figure of merits (FOMs) such as transconductance (gm), transconductance generation factor (TGF), output conductance (gd), early voltage (VEA), intrinsic gain (AV) and RF FOMs namely cut-off frequency (fT), gain frequency product (GFP), transconductance frequency product (TFP) and gain transconductance frequency product (GTFP) have been evaluated. The aforesaid analysis revels that, the device is best suited for communication related Analog/RF applications.

Contact effects analyzed by a parameter extraction method based on a single bottom-gate/top-contact organic thin-film transistor

Science.gov (United States)

Takagaki, Shunsuke; Yamada, Hirofumi; Noda, Kei

2018-03-01

Contact effects in organic thin-film transistors (OTFTs) were examined by using our previously proposed parameter extraction method from the electrical characteristics of a single staggered-type device. Gate-voltage-dependent contact resistance and channel mobility in the linear regime were evaluated for bottom-gate/top-contact (BGTC) pentacene TFTs with active layers of different thicknesses, and for pentacene TFTs with contact-doped layers prepared by coevaporation of pentacene and tetrafluorotetracyanoquinodimethane (F4TCNQ). The extracted parameters suggested that the influence of the contact resistance becomes more prominent with the larger active-layer thickness, and that contact-doping experiments give rise to a drastic decrease in the contact resistance and a concurrent considerable improvement in the channel mobility. Additionally, the estimated energy distributions of trap density in the transistor channel probably reflect the trap filling with charge carriers injected into the channel regions. The analysis results in this study confirm the effectiveness of our proposed method, with which we can investigate contact effects and circumvent the influences of characteristic variations in OTFT fabrication.

Analytical V TH and S models for (DMG-GC-stack) surrounding-gate MOSFET

Science.gov (United States)

Aouaj, Abdellah; Bouziane, Ahmed; Nouaçry, Ahmed

2012-01-01

This article presents an analytical model of surface potential, threshold voltage and subthreshold swing for a new structure of surrounding-gate MOSFET by combining dual-material gate, graded channel and gate stack. By comparison with published results, it is shown that the new MOSFET structure can improve the immunity of CMOS-based devices in the nanoscale regime against short-channel effects.

High-Fidelity Quantum Logic Gates Using Trapped-Ion Hyperfine Qubits.

Science.gov (United States)

Ballance, C J; Harty, T P; Linke, N M; Sepiol, M A; Lucas, D M

2016-08-05

We demonstrate laser-driven two-qubit and single-qubit logic gates with respective fidelities 99.9(1)% and 99.9934(3)%, significantly above the ≈99% minimum threshold level required for fault-tolerant quantum computation, using qubits stored in hyperfine ground states of calcium-43 ions held in a room-temperature trap. We study the speed-fidelity trade-off for the two-qubit gate, for gate times between 3.8  μs and 520  μs, and develop a theoretical error model which is consistent with the data and which allows us to identify the principal technical sources of infidelity.

Accuracy and Consistency of Respiratory Gating in Abdominal Cancer Patients

International Nuclear Information System (INIS)

Ge, Jiajia; Santanam, Lakshmi; Yang, Deshan; Parikh, Parag J.

2013-01-01

Purpose: To evaluate respiratory gating accuracy and intrafractional consistency for abdominal cancer patients treated with respiratory gated treatment on a regular linear accelerator system. Methods and Materials: Twelve abdominal patients implanted with fiducials were treated with amplitude-based respiratory-gated radiation therapy. On the basis of daily orthogonal fluoroscopy, the operator readjusted the couch position and gating window such that the fiducial was within a setup margin (fiducial-planning target volume [f-PTV]) when RPM indicated “beam-ON.” Fifty-five pre- and post-treatment fluoroscopic movie pairs with synchronized respiratory gating signal were recorded. Fiducial motion traces were extracted from the fluoroscopic movies using a template matching algorithm and correlated with f-PTV by registering the digitally reconstructed radiographs with the fluoroscopic movies. Treatment was determined to be “accurate” if 50% of the fiducial area stayed within f-PTV while beam-ON. For movie pairs that lost gating accuracy, a MATLAB program was used to assess whether the gating window was optimized, the external-internal correlation (EIC) changed, or the patient moved between movies. A series of safety margins from 0.5 mm to 3 mm was added to f-PTV for reassessing gating accuracy. Results: A decrease in gating accuracy was observed in 44% of movie pairs from daily fluoroscopic movies of 12 abdominal patients. Three main causes for inaccurate gating were identified as change of global EIC over time (∼43%), suboptimal gating setup (∼37%), and imperfect EIC within movie (∼13%). Conclusions: Inconsistent respiratory gating accuracy may occur within 1 treatment session even with a daily adjusted gating window. To improve or maintain gating accuracy during treatment, we suggest using at least a 2.5-mm safety margin to account for gating and setup uncertainties

Long-range protein electron transfer observed at the single-molecule level: In situ mapping of redox-gated tunneling resonance

DEFF Research Database (Denmark)

Chi, Qijin; Farver, O; Ulstrup, Jens

2005-01-01

on the redox potential. Maximum resonance appears around the equilibrium redox potential of azurin with an on/off current ratio of approximate to 9. Simulation analyses, based on a two-step interfacial ET model for the scanning tunneling microscopy redox process, were performed and provide quantitative......A biomimetic long-range electron transfer (ET) system consisting of the blue copper protein azurin, a tunneling barrier bridge, and a gold single-crystal electrode was designed on the basis of molecular wiring self-assembly principles. This system is sufficiently stable and sensitive in a quasi...... constants display tunneling features with distance-decay factors of 0.83 and 0.91 angstrom(-1) in H2O and D2O, respectively. Redox-gated tunneling resonance is observed in situ at the single-molecule level by using electrochemical scanning tunneling microscopy, exhibiting an asymmetric dependence...

Heterogeneous Monolithic Integration of Single-Crystal Organic Materials.

Science.gov (United States)

Park, Kyung Sun; Baek, Jangmi; Park, Yoonkyung; Lee, Lynn; Hyon, Jinho; Koo Lee, Yong-Eun; Shrestha, Nabeen K; Kang, Youngjong; Sung, Myung Mo

2017-02-01

Manufacturing high-performance organic electronic circuits requires the effective heterogeneous integration of different nanoscale organic materials with uniform morphology and high crystallinity in a desired arrangement. In particular, the development of high-performance organic electronic and optoelectronic devices relies on high-quality single crystals that show optimal intrinsic charge-transport properties and electrical performance. Moreover, the heterogeneous integration of organic materials on a single substrate in a monolithic way is highly demanded for the production of fundamental organic electronic components as well as complex integrated circuits. Many of the various methods that have been designed to pattern multiple heterogeneous organic materials on a substrate and the heterogeneous integration of organic single crystals with their crystal growth are described here. Critical issues that have been encountered in the development of high-performance organic integrated electronics are also addressed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Isolated elliptically polarized attosecond soft X-ray with high-brilliance using polarization gating of harmonics from relativistic plasmas at oblique incidence.

Science.gov (United States)

Chen, Zi-Yu; Li, Xiao-Ya; Li, Bo-Yuan; Chen, Min; Liu, Feng

2018-02-19

The production of intense isolated attosecond pulse is a major goal in ultrafast research. Recent advances in high harmonic generation from relativistic plasma mirrors under oblique incidence interactions gave rise to photon-rich attosecond pulses with circular or elliptical polarization. However, to achieve an isolated elliptical attosecond pulse via polarization gating using currently available long driving pulses remains a challenge, because polarization gating of high harmonics from relativistic plasmas is assumed only possible at normal or near-normal incidence. Here we numerically demonstrate a scheme around this problem. We show that via control of plasma dynamics by managing laser polarization, it is possible to gate an intense single attosecond pulse with high ellipticity extending to the soft X-ray regime at oblique incidence. This approach thus paves the way towards a powerful tool enabling high-time-resolution probe of dynamics of chiral systems and magnetic materials with current laser technology.

Quantum Gate Operations in Decoherence-Free Subspace with Superconducting Charge Qubits inside a Cavity

International Nuclear Information System (INIS)

Yi-Min, Wang; Yan-Li, Zhou; Lin-Mei, Liang; Cheng-Zu, Li

2009-01-01

We propose a feasible scheme to achieve universal quantum gate operations in decoherence-free subspace with superconducting charge qubits placed in a microwave cavity. Single-logic-qubit gates can be realized with cavity assisted interaction, which possesses the advantages of unconventional geometric gate operation. The two-logic-qubit controlled-phase gate between subsystems can be constructed with the help of a variable electrostatic transformer. The collective decoherence can be successfully avoided in our well-designed system. Moreover, GHZ state for logical qubits can also be easily produced in this system

All-metallic electrically gated 2H-TaSe{sub 2} thin-film switches and logic circuits

Energy Technology Data Exchange (ETDEWEB)

Renteria, J.; Jiang, C.; Yan, Z. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Samnakay, R.; Goli, P. [Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Pope, T. R.; Salguero, T. T. [Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States); Wickramaratne, D.; Lake, R. K. [Laboratory for Terascale and Terahertz Electronics, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Khitun, A. G. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States)

2014-01-21

We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe{sub 2} were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe{sub 2}–Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

Fabrication of GaAs nanowire devices with self-aligning W-gate electrodes using selective-area MOVPE

International Nuclear Information System (INIS)

Ooike, N.; Motohisa, J.; Fukui, T.

2004-01-01

We propose and demonstrate a novel self-aligning process for fabricating the tungsten (W) gate electrode of GaAs nanowire FETs by using selective-area metalorganic vapor phase epitaxy (SA-MOVPE) where SiO 2 /W composite films are used to mask the substrates. First, to study the growth process and its dependence on mask materials, GaAs wire structures were grown on masked substrates partially covered with a single W layer or SiO 2 /W composite films. We found that lateral growth over the masked regions could be suppressed when a wire along the [110] direction and a SiO 2 /W composite mask were used. Using this composite mask, we fabricated GaAs narrow channel FETs using W as a Schottky gate electrode, and we were able to observe FET characteristics at room temperature

Adder design using a 5-input majority gate in a novel “multilayer gate design paradigm” for quantum dot cellular automata circuits

International Nuclear Information System (INIS)

Kumar, Rohit; Ghosh, Bahniman; Gupta, Shoubhik

2015-01-01

This paper proposes a novel design paradigm for circuits designed in quantum dot cellular automata (QCA) technology. Previously reported QCA circuits in the literature have generally been designed in a single layer which is the main logical block in which the inverter and majority gate are on the base layer, except for the parts where multilayer wire crossing was used. In this paper the concept of multilayer wire crossing has been extended to design logic gates in multilayers. Using a 5-input majority gate in a multilayer, a 1-bit and 2-bit adder have been designed in the proposed multilayer gate design paradigm. A comparison has been made with some adders reported previously in the literature and it has been shown that circuits designed in the proposed design paradigm are much more efficient in terms of area, the requirement of QCA cells in the design and the input–output delay of the circuit. Over all, the availability of one additional spatial dimension makes the design process much more flexible and there is scope for the customizability of logic gate designs to make the circuit compact. (paper)

Linear gate with prescaled window

Energy Technology Data Exchange (ETDEWEB)

Koch, J; Bissem, H H; Krause, H; Scobel, W [Hamburg Univ. (Germany, F.R.). 1. Inst. fuer Experimentalphysik

1978-07-15

An electronic circuit is described that combines the features of a linear gate, a single channel analyzer and a prescaler. It allows selection of a pulse height region between two adjustable thresholds and scales the intensity of the spectrum within this window down by a factor 2sup(N) (0<=N<=9), whereas the complementary part of the spectrum is transmitted without being affected.

Development of a Compact Range-gated Vision System to Monitor Structures in Low-visibility Environments

International Nuclear Information System (INIS)

Ahn, Yong-Jin; Park, Seung-Kyu; Baik, Sung-Hoon; Kim, Dong-Lyul; Choi, Young-Soo; Jeong, Kyung-Min

2015-01-01

Image acquisition in disaster area or radiation area of nuclear industry is an important function for safety inspection and preparing appropriate damage control plans. So, automatic vision system to monitor structures and facilities in blurred smoking environments such as the places of a fire and detonation is essential. Vision systems can't acquire an image when the illumination light is blocked by disturbance materials, such as smoke, fog and dust. To overcome the imaging distortion caused by obstacle materials, robust vision systems should have extra-functions, such as active illumination through disturbance materials. One of active vision system is a range-gated imaging system. The vision system based on the range-gated imaging system can acquire image data from the blurred and darken light environments. Range-gated imaging (RGI) is a direct active visualization technique using a highly sensitive image sensor and a high intensity illuminant. Currently, the range-gated imaging technique providing 2D and range image data is one of emerging active vision technologies. The range-gated imaging system gets vision information by summing time sliced vision images. In the RGI system, a high intensity illuminant illuminates for ultra-short time and a highly sensitive image sensor is gated by ultra-short exposure time to only get the illumination light. Here, the illuminant illuminates objects by flashing strong light through disturbance materials, such as smoke particles and dust particles. In contrast to passive conventional vision systems, the RGI active vision technology enables operation even in harsh environments like low-visibility smoky environment. In this paper, a compact range-gated vision system is developed to monitor structures in low-visibility environment. The system consists of illumination light, a range-gating camera and a control computer. Visualization experiments are carried out in low-visibility foggy environment to see imaging capability

Development of a Compact Range-gated Vision System to Monitor Structures in Low-visibility Environments

Energy Technology Data Exchange (ETDEWEB)

Ahn, Yong-Jin; Park, Seung-Kyu; Baik, Sung-Hoon; Kim, Dong-Lyul; Choi, Young-Soo; Jeong, Kyung-Min [KAERI, Daejeon (Korea, Republic of)

2015-05-15

Image acquisition in disaster area or radiation area of nuclear industry is an important function for safety inspection and preparing appropriate damage control plans. So, automatic vision system to monitor structures and facilities in blurred smoking environments such as the places of a fire and detonation is essential. Vision systems can't acquire an image when the illumination light is blocked by disturbance materials, such as smoke, fog and dust. To overcome the imaging distortion caused by obstacle materials, robust vision systems should have extra-functions, such as active illumination through disturbance materials. One of active vision system is a range-gated imaging system. The vision system based on the range-gated imaging system can acquire image data from the blurred and darken light environments. Range-gated imaging (RGI) is a direct active visualization technique using a highly sensitive image sensor and a high intensity illuminant. Currently, the range-gated imaging technique providing 2D and range image data is one of emerging active vision technologies. The range-gated imaging system gets vision information by summing time sliced vision images. In the RGI system, a high intensity illuminant illuminates for ultra-short time and a highly sensitive image sensor is gated by ultra-short exposure time to only get the illumination light. Here, the illuminant illuminates objects by flashing strong light through disturbance materials, such as smoke particles and dust particles. In contrast to passive conventional vision systems, the RGI active vision technology enables operation even in harsh environments like low-visibility smoky environment. In this paper, a compact range-gated vision system is developed to monitor structures in low-visibility environment. The system consists of illumination light, a range-gating camera and a control computer. Visualization experiments are carried out in low-visibility foggy environment to see imaging capability.

Evaluation of coronary artery disease by helical CT using retrospective ECG-gating

International Nuclear Information System (INIS)

Kawawa, Yoko

2001-01-01

The purpose of this study is to evaluate the usefulness of helical CT using retrospective ECG-gating for visualization of the coronary artery and detection of coronary artery disease. We performed a coronary artery phantom study and established this new application, with 1-mm collimation, 1-mm table increment, and 0.1-mm reconstruction (0.8 sec/rotation). Helical CT of 31 patients with 39 coronary artery diseases (34 coronary artery stenoses, 1 vasospastic angina, 1 coronary artery dissection, 1 coronary artery ectasia and 2 coronary artery aneurysms) was performed in a single breath hold and ECG-gating without and with intravenous injection of nonionic iodine contrast material. We selected the images which were not affected by cardiac motion from the reconstruction images, in order to visualize the coronary artery for detection of coronary artery disease. The coronary artery was well visualized in 32 out of 39 vessels (82%). A good visualization of the coronary artery was correlated with the heart rate. Further, in this well visualized group, coronary artery diseases were detected in 24 out of 31 cases (77%). One case of vasospastic angina was not included. It was difficult to detect coronary artery disease in cases of heavily calcified vessels or in the left circumflex artery. Helical CT using this retrospective ECG-gating is a useful noninvasive examination for evaluation of coronary artery disease. (author)

Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

KAUST Repository

Rojas, Jhonathan Prieto

2013-01-07

Can we build a flexible and transparent truly high performance computer? High-k/metal gate stack based metal-oxide-semiconductor capacitor devices are monolithically fabricated on industry\\'s most widely used low-cost bulk single-crystalline silicon (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree of freedom to fabricate nanoelectronics devices using state-of-the-art CMOS compatible processes and then to utilize them in an unprecedented way for wide deployment over nearly any kind of shape and architecture surfaces. Electrical characterization shows uncompromising performance of post release devices. Mechanical characterization shows extra-ordinary flexibility (minimum bending radius of 1 cm) making this generic process attractive to extend the horizon of flexible electronics for truly high performance computers. Schematic and photograph of flexible high-k/metal gate MOSCAPs showing high flexibility and C-V plot showing uncompromised performance. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Toward error-free scaled spin torque majority gates

Energy Technology Data Exchange (ETDEWEB)

Vaysset, Adrien; Manfrini, Mauricio; Pourtois, Geoffrey; Radu, Iuliana P.; Thean, Aaron [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A. [Exploratory Integrated Circuits, Components Research, Intel Corp., Hillsboro, Oregon 97124 (United States)

2016-06-15

The functionality of a cross-shaped Spin Torque Majority Gate is explored by means of micromagnetic simulations. The different input combinations are simulated varying material parameters, current density and size. The main failure mode is identified: above a critical size, a domain wall can be pinned at the center of the cross, preventing further propagation of the information. By simulating several phase diagrams, the key parameters are obtained and the operating condition is deduced. A simple relation between the domain wall width and the size of the Spin Torque Majority Gate determines the working range. Finally, a correlation is found between the energy landscape and the main failure mode. We demonstrate that a macrospin behavior ensures a reliable majority gate operation.

Toward error-free scaled spin torque majority gates

Directory of Open Access Journals (Sweden)

Adrien Vaysset

2016-06-01

Full Text Available The functionality of a cross-shaped Spin Torque Majority Gate is explored by means of micromagnetic simulations. The different input combinations are simulated varying material parameters, current density and size. The main failure mode is identified: above a critical size, a domain wall can be pinned at the center of the cross, preventing further propagation of the information. By simulating several phase diagrams, the key parameters are obtained and the operating condition is deduced. A simple relation between the domain wall width and the size of the Spin Torque Majority Gate determines the working range. Finally, a correlation is found between the energy landscape and the main failure mode. We demonstrate that a macrospin behavior ensures a reliable majority gate operation.

Burnout and gate rupture of power MOS transistors with fission fragments of 252Cf

International Nuclear Information System (INIS)

Tang Benqi; Wang Yanping; Geng Bin; Chen Xiaohua; He Chaohui; Yang Hailiang

2000-01-01

A study to determine the single event burnout (SEB) and single event gate rupture (SEGR) sensitivities of power MOSFET devices is carried out by exposure to fission fragments from 252 Cf source. The test method, test results, a description of observed burnout current waveforms and a discussion of a possible failure mechanism are presented. The test results include the observed dependence upon applied drain or gate to source bias and effect of external capacitors and limited resistors

Photon-Mediated Quantum Gate between Two Neutral Atoms in an Optical Cavity

Science.gov (United States)

Welte, Stephan; Hacker, Bastian; Daiss, Severin; Ritter, Stephan; Rempe, Gerhard

2018-02-01

Quantum logic gates are fundamental building blocks of quantum computers. Their integration into quantum networks requires strong qubit coupling to network channels, as can be realized with neutral atoms and optical photons in cavity quantum electrodynamics. Here we demonstrate that the long-range interaction mediated by a flying photon performs a gate between two stationary atoms inside an optical cavity from which the photon is reflected. This single step executes the gate in 2 μ s . We show an entangling operation between the two atoms by generating a Bell state with 76(2)% fidelity. The gate also operates as a cnot. We demonstrate 74.1(1.6)% overlap between the observed and the ideal gate output, limited by the state preparation fidelity of 80.2(0.8)%. As the atoms are efficiently connected to a photonic channel, our gate paves the way towards quantum networking with multiqubit nodes and the distribution of entanglement in repeater-based long-distance quantum networks.

Photon-Mediated Quantum Gate between Two Neutral Atoms in an Optical Cavity

Directory of Open Access Journals (Sweden)

Stephan Welte

2018-02-01

Full Text Available Quantum logic gates are fundamental building blocks of quantum computers. Their integration into quantum networks requires strong qubit coupling to network channels, as can be realized with neutral atoms and optical photons in cavity quantum electrodynamics. Here we demonstrate that the long-range interaction mediated by a flying photon performs a gate between two stationary atoms inside an optical cavity from which the photon is reflected. This single step executes the gate in 2  μs. We show an entangling operation between the two atoms by generating a Bell state with 76(2% fidelity. The gate also operates as a cnot. We demonstrate 74.1(1.6% overlap between the observed and the ideal gate output, limited by the state preparation fidelity of 80.2(0.8%. As the atoms are efficiently connected to a photonic channel, our gate paves the way towards quantum networking with multiqubit nodes and the distribution of entanglement in repeater-based long-distance quantum networks.

A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

International Nuclear Information System (INIS)

Tripathi Shweta

2014-01-01

An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain (DMG-LDD) metal—oxide—semiconductor field-effect transistor (MOSFET) is presented using the parabolic approximation method. The proposed model takes into account the effects of the LDD region length, the LDD region doping, the lengths of the gate materials and their respective work functions, along with all the major geometrical parameters of the MOSFET. The impact of the LDD region length, the LDD region doping, and the channel length on the channel potential is studied in detail. Furthermore, the threshold voltage of the device is calculated using the minimum middle channel potential, and the result obtained is compared with the DMG MOSFET threshold voltage to show the improvement in the threshold voltage roll-off. It is shown that the DMG-LDD MOSFET structure alleviates the problem of short channel effects (SCEs) and the drain induced barrier lowering (DIBL) more efficiently. The proposed model is verified by comparing the theoretical results with the simulated data obtained by using the commercially available ATLAS™ 2D device simulator. (interdisciplinary physics and related areas of science and technology)

A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

Science.gov (United States)

Shweta, Tripathi

2014-11-01

An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain (DMG-LDD) metal—oxide—semiconductor field-effect transistor (MOSFET) is presented using the parabolic approximation method. The proposed model takes into account the effects of the LDD region length, the LDD region doping, the lengths of the gate materials and their respective work functions, along with all the major geometrical parameters of the MOSFET. The impact of the LDD region length, the LDD region doping, and the channel length on the channel potential is studied in detail. Furthermore, the threshold voltage of the device is calculated using the minimum middle channel potential, and the result obtained is compared with the DMG MOSFET threshold voltage to show the improvement in the threshold voltage roll-off. It is shown that the DMG-LDD MOSFET structure alleviates the problem of short channel effects (SCEs) and the drain induced barrier lowering (DIBL) more efficiently. The proposed model is verified by comparing the theoretical results with the simulated data obtained by using the commercially available ATLAS™ 2D device simulator.

Gate engineered heterostructure junctionless TFET with Gaussian doping profile for ambipolar suppression and electrical performance improvement

Science.gov (United States)

Aghandeh, Hadi; Sedigh Ziabari, Seyed Ali

2017-11-01

This study investigates a junctionless tunnel field-effect transistor with a dual material gate and a heterostructure channel/source interface (DMG-H-JLTFET). We find that using the heterostructure interface improves device behavior by reducing the tunneling barrier width at the channel/source interface. Simultaneously, the dual material gate structure decreases ambipolar current by increasing the tunneling barrier width at the drain/channel interface. The performance of the device is analyzed based on the energy band diagram at on, off, and ambipolar states. Numerical simulations demonstrate improvements in ION, IOFF, ION/IOFF, subthreshold slope (SS), transconductance and cut-off frequency and suppressed ambipolar behavior. Next, the workfunction optimization of dual material gate is studied. It is found that if appropriate workfunctions are selected for tunnel and auxiliary gates, the JLTFET exhibits considerably improved performance. We then study the influence of Gaussian doping distribution at the drain and the channel on the ambipolar performance of the device and find that a Gaussian doping profile and a dual material gate structure remarkably reduce ambipolar current. Gaussian doped DMG-H-JLTFET, also exhibits enhanced IOFF, ION/IOFF, SS and a low threshold voltage without degrading IOFF.

High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors

Energy Technology Data Exchange (ETDEWEB)

Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Baldovino, Silvia [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy); Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy)

2010-01-01

In the effort to ultimately shrink the size of logic devices towards a post-Si era, the integration of Ge as alternative channel material for high-speed p-MOSFET devices and the concomitant coupling with high permittivity dielectrics (high-k) as gate oxides is currently a key-challenge in microelectronics. However, the Ge option still suffers from a number of unresolved drawbacks and open issues mainly related to the thermodynamic and electrical compatibility of Ge substrates with high-k gate stack. Strictly speaking, two main concerns can be emphasized. On one side is the dilemma on which chemical/physical passivation is more suitable to minimize the unavoidable presence of electrically active defects at the oxide/semiconductor interface. On the other side, overcoming the SiO{sub 2} gate stack opens the route to a number of potentially outperforming high-k oxides. Two deposition approaches were here separately adopted to investigate the high-k oxide growth on Ge substrates, the molecular beam deposition (MBD) of Gd{sub 2}O{sub 3} and the atomic layer deposition (ALD) of HfO{sub 2}. In the MBD framework epitaxial and amorphous Gd{sub 2}O{sub 3} films were grown onto GeO{sub 2}-passivated Ge substrates. In this case, Ge passivation was achieved by exploiting the Ge{sup 4+} bonding state in GeO{sub 2} ultra-thin interface layers intentionally deposited in between Ge and the high-k oxide by means of atomic oxygen exposure to Ge. The composition of the interface layer has been characterized as a function of the oxidation temperature and evidence of Ge dangling bonds at the GeO{sub 2}/Ge interface has been reported. Finally, the electrical response of MOS capacitors incorporating Gd{sub 2}O{sub 3} and GeO{sub 2}-passivated Ge substrates has been checked by capacitance-voltage measurements. On the other hand, the structural and electrical properties of HfO{sub 2} films grown by ALD on Ge by using different oxygen precursors, i.e. H{sub 2}O, Hf(O{sup t}Bu){sub 2}(mmp

SWNT array resonant gate MOS transistor

Energy Technology Data Exchange (ETDEWEB)

Arun, A; Salet, P; Ionescu, A M [NanoLab, Ecole Polytechnique Federale de Lausanne, CH-1015, Lausanne (Switzerland); Campidelli, S; Filoramo, A; Derycke, V; Goffman, M F, E-mail: marcelo.goffman@cea.fr [Laboratoire d' Electronique Moleculaire, SPEC (CNRS URA 2454), IRAMIS, CEA, Gif-sur-Yvette (France)

2011-02-04

We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.

Gate modulation of proton transport in a nanopore.

Science.gov (United States)

Mei, Lanju; Yeh, Li-Hsien; Qian, Shizhi

2016-03-14

Proton transport in confined spaces plays a crucial role in many biological processes as well as in modern technological applications, such as fuel cells. To achieve active control of proton conductance, we investigate for the first time the gate modulation of proton transport in a pH-regulated nanopore by a multi-ion model. The model takes into account surface protonation/deprotonation reactions, surface curvature, electroosmotic flow, Stern layer, and electric double layer overlap. The proposed model is validated by good agreement with the existing experimental data on nanopore conductance with and without a gate voltage. The results show that the modulation of proton transport in a nanopore depends on the concentration of the background salt and solution pH. Without background salt, the gated nanopore exhibits an interesting ambipolar conductance behavior when pH is close to the isoelectric point of the dielectric pore material, and the net ionic and proton conductance can be actively regulated with a gate voltage as low as 1 V. The higher the background salt concentration, the lower is the performance of the gate control on the proton transport.

Shaping charge excitations in chiral edge states with a time-dependent gate voltage

Science.gov (United States)

Misiorny, Maciej; Fève, Gwendal; Splettstoesser, Janine

2018-02-01

We study a coherent conductor supporting a single edge channel in which alternating current pulses are created by local time-dependent gating and sent on a beam-splitter realized by a quantum point contact. The current response to the gate voltage in this setup is intrinsically linear. Based on a fully self-consistent treatment employing a Floquet scattering theory, we analyze the effect of different voltage shapes and frequencies, as well as the role of the gate geometry on the injected signal. In particular, we highlight the impact of frequency-dependent screening on the process of shaping the current signal. The feasibility of creating true single-particle excitations with this method is confirmed by investigating the suppression of excess noise, which is otherwise created by additional electron-hole pair excitations in the current signal.

Spin-polarized current generated by magneto-electrical gating

International Nuclear Information System (INIS)

Ma Minjie; Jalil, Mansoor Bin Abdul; Tan, Seng Ghee

2012-01-01

We theoretically study spin-polarized current through a single electron tunneling transistor (SETT), in which a quantum dot (QD) is coupled to non-magnetic source and drain electrodes via tunnel junctions, and gated by a ferromagnetic (FM) electrode. The I–V characteristics of the device are investigated for both spin and charge currents, based on the non-equilibrium Green's function formalism. The FM electrode generates a magnetic field, which causes a Zeeman spin-splitting of the energy levels in the QD. By tuning the size of the Zeeman splitting and the source–drain bias, a fully spin-polarized current is generated. Additionally, by modulating the electrical gate bias, one can effect a complete switch of the polarization of the tunneling current from spin-up to spin-down current, or vice versa. - Highlights: ► The spin polarized transport through a single electron tunneling transistor is systematically studied. ► The study is based on Keldysh non-equilibrium Green's function and equation of motion method. ► A fully spin polarized current is observed. ► We propose to reverse current polarization by the means of gate voltage modulation. ► This device can be used as a bi-polarization current generator.

Topologically protected gates for quantum computation with non-Abelian anyons in the Pfaffian quantum Hall state

Science.gov (United States)

Georgiev, Lachezar S.

2006-12-01

We extend the topological quantum computation scheme using the Pfaffian quantum Hall state, which has been recently proposed by Das Sarma , in a way that might potentially allow for the topologically protected construction of a universal set of quantum gates. We construct, for the first time, a topologically protected controlled-NOT gate, which is entirely based on quasihole braidings of Pfaffian qubits. All single-qubit gates, except for the π/8 gate, are also explicitly implemented by quasihole braidings. Instead of the π/8 gate we try to construct a topologically protected Toffoli gate, in terms of the controlled-phase gate and CNOT or by a braid-group-based controlled-controlled- Z precursor. We also give a topologically protected realization of the Bravyi-Kitaev two-qubit gate g3 .

Single-photon three-qubit quantum logic using spatial light modulators.

Science.gov (United States)

Kagalwala, Kumel H; Di Giuseppe, Giovanni; Abouraddy, Ayman F; Saleh, Bahaa E A

2017-09-29

The information-carrying capacity of a single photon can be vastly expanded by exploiting its multiple degrees of freedom: spatial, temporal, and polarization. Although multiple qubits can be encoded per photon, to date only two-qubit single-photon quantum operations have been realized. Here, we report an experimental demonstration of three-qubit single-photon, linear, deterministic quantum gates that exploit photon polarization and the two-dimensional spatial-parity-symmetry of the transverse single-photon field. These gates are implemented using a polarization-sensitive spatial light modulator that provides a robust, non-interferometric, versatile platform for implementing controlled unitary gates. Polarization here represents the control qubit for either separable or entangling unitary operations on the two spatial-parity target qubits. Such gates help generate maximally entangled three-qubit Greenberger-Horne-Zeilinger and W states, which is confirmed by tomographical reconstruction of single-photon density matrices. This strategy provides access to a wide range of three-qubit states and operations for use in few-qubit quantum information processing protocols.Photons are essential for quantum information processing, but to date only two-qubit single-photon operations have been realized. Here the authors demonstrate experimentally a three-qubit single-photon linear deterministic quantum gate by exploiting polarization along with spatial-parity symmetry.

Photovoltaic and photothermoelectric effect in a double-gated WSe2 device.

Science.gov (United States)

Groenendijk, Dirk J; Buscema, Michele; Steele, Gary A; Michaelis de Vasconcellos, Steffen; Bratschitsch, Rudolf; van der Zant, Herre S J; Castellanos-Gomez, Andres

2014-10-08

Tungsten diselenide (WSe2), a semiconducting transition metal dichalcogenide (TMDC), shows great potential as active material in optoelectronic devices due to its ambipolarity and direct bandgap in its single-layer form. Recently, different groups have exploited the ambipolarity of WSe2 to realize electrically tunable PN junctions, demonstrating its potential for digital electronics and solar cell applications. In this Letter, we focus on the different photocurrent generation mechanisms in a double-gated WSe2 device by measuring the photocurrent (and photovoltage) as the local gate voltages are varied independently in combination with above- and below-bandgap illumination. This enables us to distinguish between two main photocurrent generation mechanisms, the photovoltaic and photothermoelectric effect. We find that the dominant mechanism depends on the defined gate configuration. In the PN and NP configurations, photocurrent is mainly generated by the photovoltaic effect and the device displays a maximum responsivity of 0.70 mA/W at 532 nm illumination and rise and fall times close to 10 ms. Photocurrent generated by the photothermoelectric effect emerges in the PP configuration and is a factor of 2 larger than the current generated by the photovoltaic effect (in PN and NP configurations). This demonstrates that the photothermoelectric effect can play a significant role in devices based on WSe2 where a region of strong optical absorption, caused by, for example, an asymmetry in flake thickness or optical absorption of the electrodes, generates a sizable thermal gradient upon illumination.

Feasibility study of multi-pass respiratory-gated helical tomotherapy of a moving target via binary MLC closure

Science.gov (United States)

Kim, Bryan; Chen, Jeff; Kron, Tomas; Battista, Jerry

2010-11-01

Gated radiotherapy of lung lesions is particularly complex for helical tomotherapy, due to the simultaneous motions of its three subsystems (gantry, couch and collimator). We propose a new way to implement gating for helical tomotherapy, namely multi-pass respiratory gating. In this method, gating is achieved by delivering only the beam projections that occur within a respiratory gating window, while blocking the rest of the beam projections by fully closing all collimator leaves. Due to the continuous couch motion, the planned beam projections must be delivered over multiple passes of radiation deliveries. After each pass, the patient couch is reset to its starting position, and the treatment recommences at a different phase of tumour motion to 'fill in' the previously blocked beam projections. The gating process may be repeated until the plan dose is delivered (full gating), or halted after a certain number of passes, with the entire remaining dose delivered in a final pass without gating (partial gating). The feasibility of the full gating approach was first tested for sinusoidal target motion, through experimental measurements with film and computer simulation. The optimal gating parameters for full and partial gating methods were then determined for various fractionation schemes through computer simulation, using a patient respiratory waveform. For sinusoidal motion, the PTV dose deviations of -29 to 5% observed without gating were reduced to range from -1 to 3% for a single fraction, with a 4 pass full gating. For a patient waveform, partial gating required fewer passes than full gating for all fractionation schemes. For a single fraction, the maximum allowed residual motion was only 4 mm, requiring large numbers of passes for both full (12) and partial (7 + 1) gating methods. The number of required passes decreased significantly for 3 and 30 fractions, allowing residual motion up to 7 mm. Overall, the multi-pass gating technique was shown to be a promising

Feasibility study of multi-pass respiratory-gated helical tomotherapy of a moving target via binary MLC closure

Energy Technology Data Exchange (ETDEWEB)

Kim, Bryan; Chen, Jeff; Battista, Jerry [London Regional Cancer Program, London Health Sciences Centre, London, ON (Canada); Kron, Tomas, E-mail: bryan.kim@lhsc.on.c [Peter MacCallum Cancer Center, Melbourne (Australia)

2010-11-21

Gated radiotherapy of lung lesions is particularly complex for helical tomotherapy, due to the simultaneous motions of its three subsystems (gantry, couch and collimator). We propose a new way to implement gating for helical tomotherapy, namely multi-pass respiratory gating. In this method, gating is achieved by delivering only the beam projections that occur within a respiratory gating window, while blocking the rest of the beam projections by fully closing all collimator leaves. Due to the continuous couch motion, the planned beam projections must be delivered over multiple passes of radiation deliveries. After each pass, the patient couch is reset to its starting position, and the treatment recommences at a different phase of tumour motion to 'fill in' the previously blocked beam projections. The gating process may be repeated until the plan dose is delivered (full gating), or halted after a certain number of passes, with the entire remaining dose delivered in a final pass without gating (partial gating). The feasibility of the full gating approach was first tested for sinusoidal target motion, through experimental measurements with film and computer simulation. The optimal gating parameters for full and partial gating methods were then determined for various fractionation schemes through computer simulation, using a patient respiratory waveform. For sinusoidal motion, the PTV dose deviations of -29 to 5% observed without gating were reduced to range from -1 to 3% for a single fraction, with a 4 pass full gating. For a patient waveform, partial gating required fewer passes than full gating for all fractionation schemes. For a single fraction, the maximum allowed residual motion was only 4 mm, requiring large numbers of passes for both full (12) and partial (7 + 1) gating methods. The number of required passes decreased significantly for 3 and 30 fractions, allowing residual motion up to 7 mm. Overall, the multi-pass gating technique was shown to be a

Feedback-tuned, noise resilient gates for encoded spin qubits

Science.gov (United States)

Bluhm, Hendrik

Spin 1/2 particles form native two level systems and thus lend themselves as a natural qubit implementation. However, encoding a single qubit in several spins entails benefits, such as reducing the resources necessary for qubit control and protection from certain decoherence channels. While several varieties of such encoded spin qubits have been implemented, accurate control remains challenging, and leakage out of the subspace of valid qubit states is a potential issue. Optimal performance typically requires large pulse amplitudes for fast control, which is prone to systematic errors and prohibits standard control approaches based on Rabi flopping. Furthermore, the exchange interaction typically used to electrically manipulate encoded spin qubits is inherently sensitive to charge noise. I will discuss all-electrical, high-fidelity single qubit operations for a spin qubit encoded in two electrons in a GaAs double quantum dot. Starting from a set of numerically optimized control pulses, we employ an iterative tuning procedure based on measured error syndromes to remove systematic errors.Randomized benchmarking yields an average gate fidelity exceeding 98 % and a leakage rate into invalid states of 0.2 %. These gates exhibit a certain degree of resilience to both slow charge and nuclear spin fluctuations due to dynamical correction analogous to a spin echo. Furthermore, the numerical optimization minimizes the impact of fast charge noise. Both types of noise make relevant contributions to gate errors. The general approach is also adaptable to other qubit encodings and exchange based two-qubit gates.

Modeling Electrolytically Top-Gated Graphene

Directory of Open Access Journals (Sweden)

Mišković ZL

2010-01-01

Full Text Available Abstract We investigate doping of a single-layer graphene in the presence of electrolytic top gating. The interfacial phenomenon is modeled using a modified Poisson–Boltzmann equation for an aqueous solution of simple salt. We demonstrate both the sensitivity of graphene’s doping levels to the salt concentration and the importance of quantum capacitance that arises due to the smallness of the Debye screening length in the electrolyte.

Gate-defined Quantum Confinement in Suspended Bilayer Graphene

Science.gov (United States)

Allen, Monica

2013-03-01

Quantum confined devices in carbon-based materials offer unique possibilities for applications ranging from quantum computation to sensing. In particular, nanostructured carbon is a promising candidate for spin-based quantum computation due to the ability to suppress hyperfine coupling to nuclear spins, a dominant source of spin decoherence. Yet graphene lacks an intrinsic bandgap, which poses a serious challenge for the creation of such devices. We present a novel approach to quantum confinement utilizing tunnel barriers defined by local electric fields that break sublattice symmetry in suspended bilayer graphene. This technique electrostatically confines charges via band structure control, thereby eliminating the edge and substrate disorder that hinders on-chip etched nanostructures to date. We report clean single electron tunneling through gate-defined quantum dots in two regimes: at zero magnetic field using the energy gap induced by a perpendicular electric field and at finite magnetic fields using Landau level confinement. The observed Coulomb blockade periodicity agrees with electrostatic simulations based on local top-gate geometry, a direct demonstration of local control over the band structure of graphene. This technology integrates quantum confinement with pristine device quality and access to vibrational modes, enabling wide applications from electromechanical sensors to quantum bits. More broadly, the ability to externally tailor the graphene bandgap over nanometer scales opens a new unexplored avenue for creating quantum devices.

Validation of the Gate simulation platform in single photon emission computed tomography and application to the development of a complete 3-dimensional reconstruction algorithm

International Nuclear Information System (INIS)

Lazaro, D.

2003-10-01

Monte Carlo simulations are currently considered in nuclear medical imaging as a powerful tool to design and optimize detection systems, and also to assess reconstruction algorithms and correction methods for degrading physical effects. Among the many simulators available, none of them is considered as a standard in nuclear medical imaging: this fact has motivated the development of a new generic Monte Carlo simulation platform (GATE), based on GEANT4 and dedicated to SPECT/PET (single photo emission computed tomography / positron emission tomography) applications. We participated during this thesis to the development of the GATE platform within an international collaboration. GATE was validated in SPECT by modeling two gamma cameras characterized by a different geometry, one dedicated to small animal imaging and the other used in a clinical context (Philips AXIS), and by comparing the results obtained with GATE simulations with experimental data. The simulation results reproduce accurately the measured performances of both gamma cameras. The GATE platform was then used to develop a new 3-dimensional reconstruction method: F3DMC (fully 3-dimension Monte-Carlo) which consists in computing with Monte Carlo simulation the transition matrix used in an iterative reconstruction algorithm (in this case, ML-EM), including within the transition matrix the main physical effects degrading the image formation process. The results obtained with the F3DMC method were compared to the results obtained with three other more conventional methods (FBP, MLEM, MLEMC) for different phantoms. The results of this study show that F3DMC allows to improve the reconstruction efficiency, the spatial resolution and the signal to noise ratio with a satisfactory quantification of the images. These results should be confirmed by performing clinical experiments and open the door to a unified reconstruction method, which could be applied in SPECT but also in PET. (author)

Simulation of 1.5-mm-thick and 15-cm-diameter gated silicon drift X-ray detector operated with a single high-voltage source

Science.gov (United States)

Matsuura, Hideharu

2015-04-01

High-resolution silicon X-ray detectors with a large active area are required for effectively detecting traces of hazardous elements in food and soil through the measurement of the energies and counts of X-ray fluorescence photons radially emitted from these elements. The thicknesses and areas of commercial silicon drift detectors (SDDs) are up to 0.5 mm and 1.5 cm2, respectively. We describe 1.5-mm-thick gated SDDs (GSDDs) that can detect photons with energies up to 50 keV. We simulated the electric potential distributions in GSDDs with a Si thickness of 1.5 mm and areas from 0.18 to 168 cm2 at a single high reverse bias. The area of a GSDD could be enlarged simply by increasing all the gate widths by the same multiple, and the capacitance of the GSDD remained small and its X-ray count rate remained high.

Enhancement of ambipolar characteristics in single-walled carbon nanotubes using C{sub 60} and fabrication of logic gates

Energy Technology Data Exchange (ETDEWEB)

Park, Steve [Department of Materials Science and Engineering, Stanford University, Durand Building, 496 Lomita Mall, Stanford, California 94305-4034 (United States); Nam, Ji Hyun [Department of Electrical Engineering, Stanford University, David Packard Building, 350 Serra Mall, Mail Code: 9505, Stanford, California 94305-9505 (United States); Koo, Ja Hoon; Lei, Ting; Bao, Zhenan, E-mail: zbao@stanford.edu [Department of Chemical Engineering, Stanford University, Shriram Center, 443 Via Ortega, Room 307, Stanford, California 94305-4145 (United States)

2015-03-09

We demonstrate a technique to convert p-type single-walled carbon nanotube (SWNT) network transistor into ambipolar transistor by thermally evaporating C{sub 60} on top. The addition of C{sub 60} was observed to have two effects in enhancing ambipolar characteristics. First, C{sub 60} served as an encapsulating layer that enhanced the ambipolar characteristics of SWNTs. Second, C{sub 60} itself served as an electron transporting layer that contributed to the n-type conduction. Such a dual effect enables effective conversion of p-type into ambipolar characteristics. We have fabricated inverters using our SWNT/C{sub 60} ambipolar transistors with gain as high as 24, along with adaptive NAND and NOR logic gates.

Beyond voltage-gated ion channels: Voltage-operated membrane proteins and cellular processes.

Science.gov (United States)

Zhang, Jianping; Chen, Xingjuan; Xue, Yucong; Gamper, Nikita; Zhang, Xuan

2018-04-18

Voltage-gated ion channels were believed to be the only voltage-sensitive proteins in excitable (and some non-excitable) cells for a long time. Emerging evidence indicates that the voltage-operated model is shared by some other transmembrane proteins expressed in both excitable and non-excitable cells. In this review, we summarize current knowledge about voltage-operated proteins, which are not classic voltage-gated ion channels as well as the voltage-dependent processes in cells for which single voltage-sensitive proteins have yet to be identified. Particularly, we will focus on the following. (1) Voltage-sensitive phosphoinositide phosphatases (VSP) with four transmembrane segments homologous to the voltage sensor domain (VSD) of voltage-gated ion channels; VSPs are the first family of proteins, other than the voltage-gated ion channels, for which there is sufficient evidence for the existence of the VSD domain; (2) Voltage-gated proton channels comprising of a single voltage-sensing domain and lacking an identified pore domain; (3) G protein coupled receptors (GPCRs) that mediate the depolarization-evoked potentiation of Ca 2+ mobilization; (4) Plasma membrane (PM) depolarization-induced but Ca 2+ -independent exocytosis in neurons. (5) Voltage-dependent metabolism of phosphatidylinositol 4,5-bisphosphate (PtdIns[4,5]P 2 , PIP 2 ) in the PM. These recent discoveries expand our understanding of voltage-operated processes within cellular membranes. © 2018 Wiley Periodicals, Inc.

Theory of the synchronous motion of an array of floating flap gates oscillating wave surge converter

Science.gov (United States)

Michele, Simone; Sammarco, Paolo; d'Errico, Michele

2016-08-01

We consider a finite array of floating flap gates oscillating wave surge converter (OWSC) in water of constant depth. The diffraction and radiation potentials are solved in terms of elliptical coordinates and Mathieu functions. Generated power and capture width ratio of a single gate excited by incoming waves are given in terms of the radiated wave amplitude in the far field. Similar to the case of axially symmetric absorbers, the maximum power extracted is shown to be directly proportional to the incident wave characteristics: energy flux, angle of incidence and wavelength. Accordingly, the capture width ratio is directly proportional to the wavelength, thus giving a design estimate of the maximum efficiency of the system. We then compare the array and the single gate in terms of energy production. For regular waves, we show that excitation of the out-of-phase natural modes of the array increases the power output, while in the case of random seas we show that the array and the single gate achieve the same efficiency.

Dosimetric Analysis of Respiratory-Gated Radiotherapy for Hepatocellular Carcinoma

International Nuclear Information System (INIS)

Xi Mian; Zhang Li; Liu Mengzhong; Deng Xiaowu; Huang Xiaoyan; Liu Hui

2011-01-01

The purpose of this study was to define individualized internal target volume (ITV) for hepatocellular carcinoma (HCC) using 4D computed tomography (4DCT), and to determine the geometric and dosimetric benefits of respiratory gating. Gross tumor volumes (GTVs) were contoured on 10 respiratory phases of 4DCT images for 12 patients with HCC. Three treatment plans were prepared using different planning target volumes (PTVs): (1) PTV 3D , derived from a single helical clinical target volume (CTV) plus conventional margins; (2) PTV 10phases , derived from ITV 10phases , which encompassed all 10 CTVs plus an isotropic margin of 0.8 cm; (3) PTV gating , derived from ITV gating , which encompassed three CTVs within gating-window at end-expiration plus an isotropic margin of 0.8 cm. The PTV 3D was the largest volume for all patients. The ITV-based plans and gating plans spared more normal tissues than 3D plans, especially the liver. Without increasing normal tissue complication probability of the 3D plans, the ITV-based plans allowed for increasing the calculated dose from 50.8 Gy to 54.7 Gy on average, and the gating plans could further escalate the dose to 58.5 Gy. Compared with ITV-based plans, the dosimetric gains with gating plan strongly correlated with GTV mobility in the craniocaudal direction. The ITV-based plans can ensure target coverage with less irradiation of normal tissues compared with 3D plans. Respiratory-gated radiotherapy can further reduce the target volumes to spare more surrounding tissues and allow dose escalation, especially for patients with tumor mobility >1 cm.

Linear gate

International Nuclear Information System (INIS)

Suwono.

1978-01-01

A linear gate providing a variable gate duration from 0,40μsec to 4μsec was developed. The electronic circuity consists of a linear circuit and an enable circuit. The input signal can be either unipolar or bipolar. If the input signal is bipolar, the negative portion will be filtered. The operation of the linear gate is controlled by the application of a positive enable pulse. (author)

Solar cell structure incorporating a novel single crystal silicon material

Science.gov (United States)

Pankove, Jacques I.; Wu, Chung P.

1983-01-01

A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

Temporal resolution technology of a soft X-ray picosecond framing camera based on Chevron micro-channel plates gated in cascade

Energy Technology Data Exchange (ETDEWEB)

Yang Wenzheng [State Key Laboratory of Transient Optics and Photonics, Xi' an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi' an 710119 (China)], E-mail: ywz@opt.ac.cn; Bai Yonglin; Liu Baiyu [State Key Laboratory of Transient Optics and Photonics, Xi' an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi' an 710119 (China); Bai Xiaohong; Zhao Junping; Qin Junjun [Key Laboratory of Ultra-fast Photoelectric Diagnostics Technology, Xi' an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences, Xi' an 710119 (China)

2009-09-11

We describe a soft X-ray picosecond framing camera (XFC) based on Chevron micro-channel plates (MCPs) gated in cascade for ultra-fast process diagnostics. The micro-strip lines are deposited on both the input and the output surfaces of the Chevron MCPs and can be gated by a negative (positive) electric pulse on the first (second) MCP. The gating is controlled by the time delay T{sub d} between two gating pulses. By increasing T{sub d}, the temporal resolution and the gain of the camera are greatly improved compared with a single-gated MCP-XFC. The optimal T{sub d}, which results in the best temporal resolution, is within the electron transit time and transit time spread of the MCP. Using 250 ps, {+-}2.5 kV gating pulses, the temporal resolution of the double-gated Chevron MCPs camera is improved from 60 ps for the single-gated MCP-XFC to 37 ps for T{sub d}=350 ps. The principle is presented in detail and accompanied with a theoretic simulation and experimental results.

Speed limits for quantum gates in multiqubit systems

NARCIS (Netherlands)

Ashhab, S.; De Groot, P.C.; Nori, F.

2012-01-01

We use analytical and numerical calculations to obtain speed limits for various unitary quantum operations in multiqubit systems under typical experimental conditions. The operations that we consider include single-, two-, and three-qubit gates, as well as quantum-state transfer in a chain of

Parallel logic gates in synthetic gene networks induced by non-Gaussian noise.

Science.gov (United States)

Xu, Yong; Jin, Xiaoqin; Zhang, Huiqing

2013-11-01

The recent idea of logical stochastic resonance is verified in synthetic gene networks induced by non-Gaussian noise. We realize the switching between two kinds of logic gates under optimal moderate noise intensity by varying two different tunable parameters in a single gene network. Furthermore, in order to obtain more logic operations, thus providing additional information processing capacity, we obtain in a two-dimensional toggle switch model two complementary logic gates and realize the transformation between two logic gates via the methods of changing different parameters. These simulated results contribute to improve the computational power and functionality of the networks.

A Controlled-Phase Gate via Adiabatic Rydberg Dressing of Neutral Atoms

Science.gov (United States)

Keating, Tyler; Deutsch, Ivan; Cook, Robert; Biederman, Grant; Jau, Yuan-Yu

2014-05-01

The dipole blockade effect between Rydberg atoms is a promising tool for quantum information processing in neutral atoms. So far, most efforts to perform a quantum logic gate with this effect have used resonant laser pulses to excite the atoms, which makes the system particularly susceptible to decoherence through thermal motional effects. We explore an alternative scheme in which the atomic ground states are adiabatically ``dressed'' by turning on an off-resonant laser. We analyze the implementation of a CPHASE gate using this mechanism and find that fidelities of >99% should be possible with current technology, owing primarily to the suppression of motional errors. We also discuss how such a scheme could be generalized to perform more complicated, multi-qubit gates; in particular, a simple generalization would allow us to perform a Toffoli gate in a single step.

Quad delay gate generator (LBL No. 21X6691 P-2)

International Nuclear Information System (INIS)

McDonald, R.J.; Maier, M.R.; Landis, D.A.; Wozniak, G.J.

1986-08-01

A quad delay gate generator has been designed and packaged in a single-width NIM module. Both delay times and gate widths may be set continuously from 25 ns to 120 μsec. In normal operation, the gate follows the delay time unless a ''stop'' pulse cuts it short. Alternatively, the module may be operated in a bipolar mode, where the delay time is set by the input ''start'' pulse and reset by the input ''stop'' pulse. Modes and coarse time ranges are set via an octal DIP switch on the front panel. Fine adjustments of the delay and gate width are made via two twenty-turn potentiometers. Stability over a several day period was measured at ∼ 250 ps on the 120 ns full scale range. LEDs gives a visual indication of both the input rate and the dead time

New gate opening hours

CERN Multimedia

GS Department

2009-01-01

Please note the new opening hours of the gates as well as the intersites tunnel from the 19 May 2009: GATE A 7h - 19h GATE B 24h/24 GATE C 7h - 9h\t17h - 19h GATE D 8h - 12h\t13h - 16h GATE E 7h - 9h\t17h - 19h Prévessin 24h/24 The intersites tunnel will be opened from 7h30 to 18h non stop. GS-SEM Group Infrastructure and General Services Department

Insights into operation of planar tri-gate tunnel field effect transistor for dynamic memory application

Science.gov (United States)

Navlakha, Nupur; Kranti, Abhinav

2017-07-01

Insights into device physics and operation through the control of energy barriers are presented for a planar tri-gate Tunnel Field Effect Transistor (TFET) based dynamic memory. The architecture consists of a double gate (G1) at the source side and a single gate (G2) at the drain end of the silicon film. Dual gates (G1) effectively enhance the tunneling based read mechanism through the enhanced coupling and improved electrostatic control over the channel. The single gate (G2) controls the holes in the potential barrier induced through the proper selection of bias and workfunction. The results indicate that the planar tri-gate achieves optimum performance evaluated in terms of two composite metrics (M1 and M2), namely, product of (i) Sense Margin (SM) and Retention Time (RT) i.e., M1 = SM × RT and (ii) Sense Margin and Current Ratio (CR) i.e., M2 = SM × CR. The regulation of barriers created by the gates (G1 and G2) through the optimal use of device parameters leads to better performance metrics, with significant improvement at scaled lengths as compared to other tunneling based dynamic memory architectures. The investigation shows that lengths of G1, G2 and lateral spacing can be scaled down to 25 nm, 50 nm, and 30 nm, respectively, while achieving reasonable values for (M1, M2). The work demonstrates a systematic approach to showcase the advancement in TFET based Dynamic Random Access Memory (DRAM) through the use of planar tri-gate topology at a lower bias value. The concept, design, and operation of planar tri-gate architecture provide valuable viewpoints for TFET based DRAM.

ISAC's Gating-ML 2.0 data exchange standard for gating description.

Science.gov (United States)

Spidlen, Josef; Moore, Wayne; Brinkman, Ryan R

2015-07-01

The lack of software interoperability with respect to gating has traditionally been a bottleneck preventing the use of multiple analytical tools and reproducibility of flow cytometry data analysis by independent parties. To address this issue, ISAC developed Gating-ML, a computer file format to encode and interchange gates. Gating-ML 1.5 was adopted and published as an ISAC Candidate Recommendation in 2008. Feedback during the probationary period from implementors, including major commercial software companies, instrument vendors, and the wider community, has led to a streamlined Gating-ML 2.0. Gating-ML has been significantly simplified and therefore easier to support by software tools. To aid developers, free, open source reference implementations, compliance tests, and detailed examples are provided to stimulate further commercial adoption. ISAC has approved Gating-ML as a standard ready for deployment in the public domain and encourages its support within the community as it is at a mature stage of development having undergone extensive review and testing, under both theoretical and practical conditions. © 2015 International Society for Advancement of Cytometry.

Determination of prospective displacement-based gate threshold for respiratory-gated radiation delivery from retrospective phase-based gate threshold selected at 4D CT simulation

International Nuclear Information System (INIS)

Vedam, S.; Archambault, L.; Starkschall, G.; Mohan, R.; Beddar, S.

2007-01-01

Four-dimensional (4D) computed tomography (CT) imaging has found increasing importance in the localization of tumor and surrounding normal structures throughout the respiratory cycle. Based on such tumor motion information, it is possible to identify the appropriate phase interval for respiratory gated treatment planning and delivery. Such a gating phase interval is determined retrospectively based on tumor motion from internal tumor displacement. However, respiratory-gated treatment is delivered prospectively based on motion determined predominantly from an external monitor. Therefore, the simulation gate threshold determined from the retrospective phase interval selected for gating at 4D CT simulation may not correspond to the delivery gate threshold that is determined from the prospective external monitor displacement at treatment delivery. The purpose of the present work is to establish a relationship between the thresholds for respiratory gating determined at CT simulation and treatment delivery, respectively. One hundred fifty external respiratory motion traces, from 90 patients, with and without audio-visual biofeedback, are analyzed. Two respiratory phase intervals, 40%-60% and 30%-70%, are chosen for respiratory gating from the 4D CT-derived tumor motion trajectory. From residual tumor displacements within each such gating phase interval, a simulation gate threshold is defined based on (a) the average and (b) the maximum respiratory displacement within the phase interval. The duty cycle for prospective gated delivery is estimated from the proportion of external monitor displacement data points within both the selected phase interval and the simulation gate threshold. The delivery gate threshold is then determined iteratively to match the above determined duty cycle. The magnitude of the difference between such gate thresholds determined at simulation and treatment delivery is quantified in each case. Phantom motion tests yielded coincidence of simulation

Two-dimensional threshold voltage model and design considerations for gate electrode work function engineered recessed channel nanoscale MOSFET: I

International Nuclear Information System (INIS)

Chaujar, Rishu; Kaur, Ravneet; Gupta, Mridula; Gupta, R S; Saxena, Manoj

2009-01-01

This paper discusses a threshold voltage model for novel device structure: gate electrode work function engineered recessed channel (GEWE-RC) nanoscale MOSFET, which combines the advantages of both RC and GEWE structures. In part I, the model accurately predicts (a) surface potential, (b) threshold voltage and (c) sub-threshold slope for single material gate recessed channel (SMG-RC) and GEWE-RC structures. Part II focuses on the development of compact analytical drain current model taking into account the transition regimes from sub-threshold to saturation. Furthermore, the drain conductance evaluation has also been obtained, reflecting relevance of the proposed device for analogue design. The analysis takes into account the effect of gate length and groove depth in order to develop a compact model suitable for device design. The analytical results predicted by the model confirm well with the simulated results. Results in part I also provide valuable design insights in the performance of nanoscale GEWE-RC MOSFET with optimum threshold voltage and negative junction depth (NJD), and hence serves as a tool to optimize important device and technological parameters for 40 nm technology

Error rates and resource overheads of encoded three-qubit gates

Science.gov (United States)

Takagi, Ryuji; Yoder, Theodore J.; Chuang, Isaac L.

2017-10-01

A non-Clifford gate is required for universal quantum computation, and, typically, this is the most error-prone and resource-intensive logical operation on an error-correcting code. Small, single-qubit rotations are popular choices for this non-Clifford gate, but certain three-qubit gates, such as Toffoli or controlled-controlled-Z (ccz), are equivalent options that are also more suited for implementing some quantum algorithms, for instance, those with coherent classical subroutines. Here, we calculate error rates and resource overheads for implementing logical ccz with pieceable fault tolerance, a nontransversal method for implementing logical gates. We provide a comparison with a nonlocal magic-state scheme on a concatenated code and a local magic-state scheme on the surface code. We find the pieceable fault-tolerance scheme particularly advantaged over magic states on concatenated codes and in certain regimes over magic states on the surface code. Our results suggest that pieceable fault tolerance is a promising candidate for fault tolerance in a near-future quantum computer.

Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors.

Science.gov (United States)

Gu, Weixia; Shen, Jiaoyan; Ma, Xiying

2014-02-28

Two-dimensional (2D) molybdenum disulfide (MoS2) is an attractive alternative semiconductor material for next-generation low-power nanoelectronic applications, due to its special structure and large bandgap. Here, we report the fabrication of large-area MoS2 nanodiscs and their incorporation into back-gated field effect transistors (FETs) whose electrical properties we characterize. The MoS2 nanodiscs, fabricated via chemical vapor deposition (CVD), are homogeneous and continuous, and their thickness of around 5 nm is equal to a few layers of MoS2. In addition, we find that the MoS2 nanodisc-based back-gated field effect transistors with nickel electrodes achieve very high performance. The transistors exhibit an on/off current ratio of up to 1.9 × 105, and a maximum transconductance of up to 27 μS (5.4 μS/μm). Moreover, their mobility is as high as 368 cm2/Vs. Furthermore, the transistors have good output characteristics and can be easily modulated by the back gate. The electrical properties of the MoS2 nanodisc transistors are better than or comparable to those values extracted from single and multilayer MoS2 FETs.

Poly-Si gate engineering for advanced CMOS transistors by germanium implantation

International Nuclear Information System (INIS)

Bourdon, H.; Juhel, M.; Oudet, B.; Breil, N.; Lenoble, D.

2005-01-01

Standard gate materials are compared to Ge implanted poly-Si and deposited poly-SiGe. It is demonstrated in this paper that the electrical resistance of the gate is significantly reduced via the use of poly-SiGe (from 30% to 40% decrease in resistance). Similarly, we show via specific optimization that localized Ge implantation is also suitable to reduce gate resistance. Physical characterizations are performed to determine the 'root' causes at the origin of these improvements. In line with future publications showing strong benefits on CMOS device performance, grain size effects seem to be the main mechanisms explaining the measured improvement

Ultra-Low Power Consuming Direct Radiation Sensors Based on Floating Gate Structures

Directory of Open Access Journals (Sweden)

Evgeny Pikhay

2017-07-01

Full Text Available In this paper, we report on ultra-low power consuming single poly floating gate direct radiation sensors. The developed devices are intended for total ionizing dose (TID measurements and fabricated in a standard CMOS process flow. Sensor design and operation is discussed in detail. Original array sensors were suggested and fabricated that allowed high statistical significance of the radiation measurements and radiation imaging functions. Single sensors and array sensors were analyzed in combination with the specially developed test structures. This allowed insight into the physics of sensor operations and exclusion of the phenomena related to material degradation under irradiation in the interpretation of the measurement results. Response of the developed sensors to various sources of ionizing radiation (Gamma, X-ray, UV, energetic ions was investigated. The optimal design of sensor for implementation in dosimetry systems was suggested. The roadmap for future improvement of sensor performance is suggested.

Reproducibility of non-invasive measurement for left ventricular contractility using gated myocardial SPECT

International Nuclear Information System (INIS)

Kim, Kyeon Min; Lee, Dong Soo; Kim, Yu Kyeong; Cheon, Gi Jeong; Kim, Seok Ki; Chung, June Key; Lee, Myung Chul

2001-01-01

We tried to establish the reproducibility of the measurement of maximal elastance (Emax) and to compare the degree of the reproducibility of two estimation methods: single pressure-volume loop method and parameter optimization method. In 47 patients (42 males and 5 females, 53 ± 10 years old) with suspected coronary artery disease (ejection fraction; 22-68%), gated Tc-99m MIBI myocardial SPECT and arterial tonometry were acquired, In 11 patients among these 47 patients, gated SPECT and tonometry were performed twice consecutively with patients in situ. Emax and void volume (Vo) were estimated using single pressure-volume loop method of Lee and parameter optimization method based on linear approximation of Yoshizawa. Correlation between the consecutive measurements by each method and correlation between the two estimation methods were compared. Reproducibility of Emax (r=0.96) and Vo (r=0.99) by single pressure-volume method was better than the reporducibility of Emax (r=0.89) and Vo (r=0.64) by parameter optimization method. Correlations of Emax and Vo were fair between the two methods. The correlation of Emax (r=0.77) was better thn that of Vo (r=0.65). Reproducibiity of Emax measurement by single pressure-volume loop method using gated myocardial SPECT and arterial tonometry was excellent. Reproducibility by parameter optimization method was also but was less than that achieved by single pressure-volume method

Quantum gates by inverse engineering of a Hamiltonian

Science.gov (United States)

Santos, Alan C.

2018-01-01

Inverse engineering of a Hamiltonian (IEH) from an evolution operator is a useful technique for the protocol of quantum control with potential applications in quantum information processing. In this paper we introduce a particular protocol to perform IEH and we show how this scheme can be used to implement a set of quantum gates by using minimal quantum resources (such as entanglement, interactions between more than two qubits or auxiliary qubits). Remarkably, while previous protocols request three-qubit interactions and/or auxiliary qubits to implement such gates, our protocol requires just two-qubit interactions and no auxiliary qubits. By using this approach we can obtain a large class of Hamiltonians that allow us to implement single and two-qubit gates necessary for quantum computation. To conclude this article we analyze the performance of our scheme against systematic errors related to amplitude noise, where we show that the free parameters introduced in our scheme can be useful for enhancing the robustness of the protocol against such errors.

Optical identification of sea-mines - Gated viewing three-dimensional laser radar

DEFF Research Database (Denmark)

Busck, Jens

2005-01-01

A gated viewing high accuracy mono-static laser radar has been developed for the purpose of improving the optical underwater sea-mine identification handled by the Navy. In the final stage of the sea-mine detection, classification and identification process the Navy applies a remote operated...... vehicle for optical identification of the bottom seamine. The experimental results of the thesis indicate that replacing the conventional optical video and spotlight system applied by the Navy with the gated viewing two- and three-dimensional laser radar can improve the underwater optical sea...... of the short laser pulses (0.5 ns), the high laser pulse repetition rate (32.4 kHz), the fast gating camera (0.2 ns), the short camera delay steps (0.1 ns), the applied optical single mode fiber, and the applied algorithm for three-dimensional imaging. The gated viewing laser radar system configuration...

The additive prognostic value of perfusion and functional data assessed by quantitative gated SPECT in women

NARCIS (Netherlands)

Y.G.C.J. America (Yves); J.J. Bax (Jeroen); H. Boersma (Eric); M. Stokkel (Marcel); E.E. van der Wall (Ernst)

2009-01-01

textabstractBackground: The aim of this study was to assess the prognostic value of technetium-99m tetrofosmin gated SPECT imaging in women using quantitative gated single photon emission computed tomography (SPECT) imaging. Methods: We followed 453 consecutive female patients. Average follow-up was

Flying spin-qubit gates implemented through Dresselhaus and Rashba spin-orbit couplings

International Nuclear Information System (INIS)

Gong, S.J.; Yang, Z.Q.

2007-01-01

A theoretical scheme is proposed to implement flying spin-qubit gates based on two semiconductor wires with Dresselhaus and Rashba spin-orbit couplings (SOCs), respectively. It is found that under the manipulation of the Dresselhaus/Rashba SOC, spin rotates around x/y axis in the three-dimensional spin space. By combining the two kinds of manipulations, i.e. connecting the two kinds of semiconductor wires in series, we obtain a universal set of losses flying single-qubit gates including Hadamard, phase, and π/8 gates. A ballistic switching effect of electronic flow is also found in the investigation. Our results may be useful in future spin or nanoscale electronics

Nano-CMOS gate dielectric engineering

CERN Document Server

Wong, Hei

2011-01-01

According to Moore's Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devic

Gate current for p+-poly PMOS devices under gate injection conditions

NARCIS (Netherlands)

Hof, A.J.; Holleman, J.; Woerlee, P.H.

2001-01-01

In current CMOS processing both n+-poly and p+-poly gates are used. The I-V –relationship and reliability of n+-poly devices are widely studied and well understood. Gate currents and reliability for p+-poly PMOS devices under gate injection conditions are not well understood. In this paper, the

3D modeling of dual-gate FinFET.

Science.gov (United States)

Mil'shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

2012-11-13

The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence on the strengths of the electrical field along the channel. However, in cases when the ratio of FinFET volume to its surface dramatically decreases, one should carefully consider the surface boundary conditions of the device. Moreover, the inherent non-planar nature of a FinFET demands 3D modeling for accurate analysis of the device performance. Using the Silvaco modeling tool with quantization effects, we modeled a physical FinFET described in the work of Hisamoto et al. (IEEE Tran. Elec. Devices 47:12, 2000) in 3D. We compared it with a 2D model of the same device. We demonstrated that 3D modeling produces more accurate results. As 3D modeling results came close to experimental measurements, we made the next step of the study by designing a dual-gate FinFET biased at Vg1 >Vg2. It is shown that the dual-gate FinFET carries higher transconductance than the single-gate device.

Implementation of quantum logic gates via Stark-tuned Förster resonance in Rydberg atoms

Science.gov (United States)

Huang, Xi-Rong; Hu, Chang-Sheng; Shen, Li-Tuo; Yang, Zhen-Biao; Wu, Huai-Zhi

2018-02-01

We present a scheme for implementation of controlled-Z and controlled-NOT gates via rapid adiabatic passage and Stark-tuned Förster resonance. By sweeping the Förster resonance once without passing through it and adiabatically tuning the angle-dependent Rydberg-Rydberg interaction of the dipolar nature, the system can be effectively described by a two-level system with the adiabatic theorem. The single adiabatic passage leads to a gate fidelity as high as 0.999 and a greatly reduced gate operation time. We investigate the scheme by considering an actual atomic level configuration with rubidium atoms, where the fidelity of the controlled-Z gate is still higher than 0.99 under the influence of the Zeeman effect.

Assessment of the effect of revascularization early after CABG using ECG-gated perfusion single-photon emission tomography

International Nuclear Information System (INIS)

Kubo, Shigeto; Tadamura, Eiji; Kudoh, Takashi; Inubushi, Masayuki; Konishi, Junji; Ikeda, Tadashi; Koshiji, Takaaki; Nishimura, Kazunobu; Komeda, Masashi; Tamaki, Nagara

2001-01-01

When an arterial graft is used, reversible perfusion defects on single-photon emission tomography (SPET) perfusion images are occasionally observed early after coronary artery bypass graft surgery (CABG), owing to the restricted flow capacity. The purpose of this study was to determine whether the functional information obtained with electrocardiography (ECG)-gated perfusion SPET could be helpful in evaluating the effect of revascularization early after CABG. Twenty-three patients (18 men and 5 women, mean age 65±9 years) underwent stress/re-injection thallium-201 ECG-gated SPET before and 4 weeks after CABG (13 with exercise and 10 with dipyridamole). Patency of all grafts was confirmed by coronary angiography 1 month after CABG. Cardiac functional data including the left ventricular ejection fraction (LVEF) and the transient ischaemic dilatation (TID) ratio were analysed using a commercially available automated program. The conventional stress and re-injection tomograms were interpreted by means of a five-point scoring system in a nine-segment model. Stress-induced reversible 201 Tl perfusion defects were present in 64% of the myocardial segments bypassed by patent arterial grafts, in contrast to 42% of the myocardial segments bypassed by patent venous grafts (χ 2 =7.8, P=0.005). Of the 23 patients, 12 showed improvement in summed ischaemic scores (group 1), while 11 had no change or deterioration (group 2), although all grafts were patent on postoperative catheterization. The TID ratio improved in both group 1 and group 2 before and after CABG (1.14±0.13 vs 0.99±0.07, P=0.001 and 1.09±0.07 vs 0.94±0.05, P=0.002, respectively). However, LVEF did not significantly improve in group 1 or group 2 after CABG (42.5%±9.9% vs 47.5%±11.8%, and 52.1%±7.5% vs 53.1%±5.9%, respectively). Perfusion imaging or LVEF assessment is of limited value early after CABG. The TID ratio obtained with ECG-gated perfusion SPET may be a useful marker to evaluate the effect of

A triple quantum dot in a single-wall carbon nanotube

DEFF Research Database (Denmark)

Grove-Rasmussen, Kasper; Jørgensen, Henrik Ingerslev; Hayashi, T.

2008-01-01

A top-gated single-wall carbon nanotube is used to define three coupled quantum dots in series between two electrodes. The additional electron number on each quantum dot is controlled by top-gate voltages allowing for current measurements of single, double, and triple quantum dot stability diagrams...

The single-shot opto-digitizer

International Nuclear Information System (INIS)

Nail, M.; Gibert, Ph.

2000-01-01

Laser-plasma experiments need to measure signals provided either by X-ray, photonic or neutronic detector. The measurement should have 50 GHz bandwidth and up to several hundred of Giga-Hertz for sub picosecond plasmas. For this purpose, a 35 GHz single shot opto-digitizer (10 ps risetime) has been studied and built. The device is made up of a 50 ohms microstrip propagation line, periodically lined by 100 sampled gates. The propagation line is long enough to measure a 400 ps duration. The sampling rate is 250 Gsa/s (every 4 ps). The sampled gates are made with fast recombining photo-material and turn on by a subpicosecond laser pulse which is synchronized exactly with the analysed phenomena. Every gate is recording to a storing capacitor. After the recording, every capacitor charge is needed to built the signal that was displayed on the propagation line. The dynamic range of measurement is 47 for the entire device. The device can measure positive or negative signals from 1.5 to 70 Volts. To increase the bandwidth, two another kinds of opto-digitizer were studied: one is a buried stripline with 56 GHz band width, the other a 70 GHz coplanar transmission line. For the purpose of subpicosecond plasmas, a 30 coplanar waveguide opto-digitizer was studied. Characteristics are as followed: window of measurement 40 ps, sampling rate 1 ps, bandwidth 230 GHz. Finally, a bundle of optical fibers was used to propagate the laser beam on semiconductor gates. If the gates are lighted at the same time, i.e. if the optical fibers have the same length, we get a simultaneous addressing. By using different lengths of optical fibers, we can do a sequential addressing. So, the sampling rate becomes a combination of the distance between two adjacent sampled channels, and the difference in length of optical fibers. (author)

Multiple Independent Gate FETs: How Many Gates Do We Need?

OpenAIRE

Amarù, Luca; Hills, Gage; Gaillardon, Pierre-Emmanuel; Mitra, Subhasish; De Micheli, Giovanni

2015-01-01

Multiple Independent Gate Field Effect Transistors (MIGFETs) are expected to push FET technology further into the semiconductor roadmap. In a MIGFET, supplementary gates either provide (i) enhanced conduction properties or (ii) more intelligent switching functions. In general, each additional gate also introduces a side implementation cost. To enable more efficient digital systems, MIGFETs must leverage their expressive power to realize complex logic circuits with few physical resources. Rese...

Multi-valued logic gates based on ballistic transport in quantum point contacts.

Science.gov (United States)

Seo, M; Hong, C; Lee, S-Y; Choi, H K; Kim, N; Chung, Y; Umansky, V; Mahalu, D

2014-01-22

Multi-valued logic gates, which can handle quaternary numbers as inputs, are developed by exploiting the ballistic transport properties of quantum point contacts in series. The principle of a logic gate that finds the minimum of two quaternary number inputs is demonstrated. The device is scalable to allow multiple inputs, which makes it possible to find the minimum of multiple inputs in a single gate operation. Also, the principle of a half-adder for quaternary number inputs is demonstrated. First, an adder that adds up two quaternary numbers and outputs the sum of inputs is demonstrated. Second, a device to express the sum of the adder into two quaternary digits [Carry (first digit) and Sum (second digit)] is demonstrated. All the logic gates presented in this paper can in principle be extended to allow decimal number inputs with high quality QPCs.

Multi-Valued Logic Gates based on Ballistic Transport in Quantum Point Contacts

Science.gov (United States)

Seo, M.; Hong, C.; Lee, S.-Y.; Choi, H. K.; Kim, N.; Chung, Y.; Umansky, V.; Mahalu, D.

2014-01-01

Multi-valued logic gates, which can handle quaternary numbers as inputs, are developed by exploiting the ballistic transport properties of quantum point contacts in series. The principle of a logic gate that finds the minimum of two quaternary number inputs is demonstrated. The device is scalable to allow multiple inputs, which makes it possible to find the minimum of multiple inputs in a single gate operation. Also, the principle of a half-adder for quaternary number inputs is demonstrated. First, an adder that adds up two quaternary numbers and outputs the sum of inputs is demonstrated. Second, a device to express the sum of the adder into two quaternary digits [Carry (first digit) and Sum (second digit)] is demonstrated. All the logic gates presented in this paper can in principle be extended to allow decimal number inputs with high quality QPCs.

Transparently wrap-gated semiconductor nanowire arrays for studies of gate-controlled photoluminescence

Energy Technology Data Exchange (ETDEWEB)

Nylund, Gustav; Storm, Kristian; Torstensson, Henrik; Wallentin, Jesper; Borgström, Magnus T.; Hessman, Dan; Samuelson, Lars [Solid State Physics, Nanometer Structure Consortium, Lund University, Box 118, S-221 00 Lund (Sweden)

2013-12-04

We present a technique to measure gate-controlled photoluminescence (PL) on arrays of semiconductor nanowire (NW) capacitors using a transparent film of Indium-Tin-Oxide (ITO) wrapping around the nanowires as the gate electrode. By tuning the wrap-gate voltage, it is possible to increase the PL peak intensity of an array of undoped InP NWs by more than an order of magnitude. The fine structure of the PL spectrum reveals three subpeaks whose relative peak intensities change with gate voltage. We interpret this as gate-controlled state-filling of luminescing quantum dot segments formed by zincblende stacking faults in the mainly wurtzite NW crystal structure.

Efficient one- and two-qubit pulsed gates for an oscillator-stabilized Josephson qubit

International Nuclear Information System (INIS)

Brito, Frederico; DiVincenzo, David P; Koch, Roger H; Steffen, Matthias

2008-01-01

We present theoretical schemes for performing high-fidelity one- and two-qubit pulsed gates for a superconducting flux qubit. The 'IBM qubit' consists of three Josephson junctions, three loops and a superconducting transmission line. Assuming a fixed inductive qubit-qubit coupling, we show that the effective qubit-qubit interaction is tunable by changing the applied fluxes, and can be made negligible, allowing one to perform high-fidelity single qubit gates. Our schemes are tailored to alleviate errors due to 1/f noise; we find gates with only 1% loss of fidelity due to this source, for pulse times in the range of 20-30 ns for one-qubit gates (Z rotations, Hadamard) and 60 ns for a two-qubit gate (controlled-Z). Our relaxation and dephasing time estimates indicate a comparable loss of fidelity from this source. The control of leakage plays an important role in the design of our shaped pulses, preventing shorter pulse times. However, we have found that imprecision in the control of the quantum phase plays a major role in the limitation of the fidelity of our gates

Energy-loss return gate via liquid dielectric polarization.

Science.gov (United States)

Kim, Taehun; Yong, Hyungseok; Kim, Banseok; Kim, Dongseob; Choi, Dukhyun; Park, Yong Tae; Lee, Sangmin

2018-04-12

There has been much research on renewable energy-harvesting techniques. However, owing to increasing energy demands, significant energy-related issues remain to be solved. Efforts aimed at reducing the amount of energy loss in electric/electronic systems are essential for reducing energy consumption and protecting the environment. Here, we design an energy-loss return gate system that reduces energy loss from electric/electronic systems by utilizing the polarization of liquid dielectrics. The use of a liquid dielectric material in the energy-loss return gate generates electrostatic potential energy while reducing the dielectric loss of the electric/electronic system. Hence, an energy-loss return gate can make breakthrough impacts possible by amplifying energy-harvesting efficiency, lowering the power consumption of electronics, and storing the returned energy. Our study indicates the potential for enhancing energy-harvesting technologies for electric/electronics systems, while increasing the widespread development of these systems.

Comparison of the effects of TripleGates and Gates-Glidden burs on cervical dentin thickness and root canal area by using cone beam computed tomography

Directory of Open Access Journals (Sweden)

Kássio SOUSA

2015-04-01

Full Text Available The search for new instruments to promote an appropriate cervical preparation has led to the development of new rotary instruments such as TripleGates. However, to the best of the authors' knowledge, there is no study evaluating TripleGates effect on the “risk zone” of mandibular molars. Objectives : The aim of this study was to evaluate the effects of a crown-down sequence of Gates-Glidden and TripleGates burs on the remaining cervical dentin thickness and the total amount of dentin removed from the root canals during the instrumentation by using cone beam computed tomography. The number of separated instruments was also evaluated. Material and Methods : Mesial roots of 40 mandibular first molars were divided into 2 equal groups: crown-down sequence of Gates-Glidden (#3, #2, #1 and TripleGates burs. Cervical dentin thickness and canal area were measured before and after instrumentation by using cone beam computed tomography and image analysis software. Student’s t-test was used to determine significant differences at p0.05 were observed between the instruments, regarding the root canal area and dentin wall thickness. Conclusion : Both tested instruments used for cervical preparation were safe to be used in the mesial root canal of mandibular molars.

Top-gate pentacene-based organic field-effect transistor with amorphous rubrene gate insulator

Science.gov (United States)

Hiroki, Mizuha; Maeda, Yasutaka; Ohmi, Shun-ichiro

2018-02-01

The scaling of organic field-effect transistors (OFETs) is necessary for high-density integration and for this, OFETs with a top-gate configuration are required. There have been several reports of damageless lithography processes for organic semiconductor or insulator layers. However, it is still difficult to fabricate scaled OFETs with a top-gate configuration. In this study, the lift-off process and the device characteristics of the OFETs with a top-gate configuration utilizing an amorphous (α) rubrene gate insulator were investigated. We have confirmed that α-rubrene shows an insulating property, and its extracted linear mobility was 2.5 × 10-2 cm2/(V·s). The gate length and width were 10 and 60 µm, respectively. From these results, the OFET with a top-gate configuration utilizing an α-rubrene gate insulator is promising for the high-density integration of scaled OFETs.

Simulation of planar single-gate Si tunnel FET with average subthreshold swing of less than 60 mV/decade for 0.3 V operation

Science.gov (United States)

Kukita, Kentaro; Uechi, Tadayoshi; Shimokawa, Junji; Goto, Masakazu; Yokota, Yoshinori; Kawanaka, Shigeru; Tanamoto, Tetsufumi; Tanimoto, Hiroyoshi; Takagi, Shinichi

2018-04-01

Planar single-gate (SG) silicon (Si) tunnel field effect transistors (TFETs) are attracting interest for ultra-low voltage operation and CMOS applications. For the achievement of subthreshold swing (S.S.) less than thermal limit of Si MOSFETs (S.S. = 60 mV/decade at 300 K), previous studies have proposed the formation of a pocket region, which needs very difficult implantation process. In this work, a planar SG Si TFET without pocket was proposed by using the technology computer-aided design (TCAD) simulations. An average S.S. of less than 60 mV/decade for 0.3 V (= V gs = V ds) operation was obtained. It is found that both low average S.S. (= 27.8 mV/decade) and high on-current I on (= 3.8 µA/µm) are achieved without pocket doping by scaling the equivalent oxide thickness (EOT) and increasing the gate-to-source overlap length L ov.

Cluster computing software for GATE simulations

International Nuclear Information System (INIS)

Beenhouwer, Jan de; Staelens, Steven; Kruecker, Dirk; Ferrer, Ludovic; D'Asseler, Yves; Lemahieu, Ignace; Rannou, Fernando R.

2007-01-01

Geometry and tracking (GEANT4) is a Monte Carlo package designed for high energy physics experiments. It is used as the basis layer for Monte Carlo simulations of nuclear medicine acquisition systems in GEANT4 Application for Tomographic Emission (GATE). GATE allows the user to realistically model experiments using accurate physics models and time synchronization for detector movement through a script language contained in a macro file. The downside of this high accuracy is long computation time. This paper describes a platform independent computing approach for running GATE simulations on a cluster of computers in order to reduce the overall simulation time. Our software automatically creates fully resolved, nonparametrized macros accompanied with an on-the-fly generated cluster specific submit file used to launch the simulations. The scalability of GATE simulations on a cluster is investigated for two imaging modalities, positron emission tomography (PET) and single photon emission computed tomography (SPECT). Due to a higher sensitivity, PET simulations are characterized by relatively high data output rates that create rather large output files. SPECT simulations, on the other hand, have lower data output rates but require a long collimator setup time. Both of these characteristics hamper scalability as a function of the number of CPUs. The scalability of PET simulations is improved here by the development of a fast output merger. The scalability of SPECT simulations is improved by greatly reducing the collimator setup time. Accordingly, these two new developments result in higher scalability for both PET and SPECT simulations and reduce the computation time to more practical values

Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

Energy Technology Data Exchange (ETDEWEB)

Baart, T. A.; Vandersypen, L. M. K. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Eendebak, P. T. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft (Netherlands); Reichl, C.; Wegscheider, W. [Solid State Physics Laboratory, ETH Zürich, 8093 Zürich (Switzerland)

2016-05-23

We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

Mechanics of biopolymer materials: Single chains to bulk properties

NARCIS (Netherlands)

Amuasi, H.E.; Storm, C.

2010-01-01

We outline the first stages in the multiscale modeling of biopolymer materials, starting with the statistical mechanics of single stiff chains. In the first coarse graining step, we demonstrate how to integrate out the single polymer degrees of freedom in supramolecular assemblies of such

Multi-valued logic circuits using hybrid circuit consisting of three gates single-electron transistors (TG-SETs) and MOSFETs.

Science.gov (United States)

Shin, SeungJun; Yu, YunSeop; Choi, JungBum

2008-10-01

New multi-valued logic (MVL) families using the hybrid circuits consisting of three gates single-electron transistors (TG-SETs) and a metal-oxide-semiconductor field-effect transistor (MOSFET) are proposed. The use of SETs offers periodic literal characteristics due to Coulomb oscillation of SET, which allows a realization of binary logic (BL) circuits as well as multi-valued logic (MVL) circuits. The basic operations of the proposed MVL families are successfully confirmed through SPICE circuit simulation based on the physical device model of a TG-SET. The proposed MVL circuits are found to be much faster, but much larger power consumption than a previously reported MVL, and they have a trade-off between speed and power consumption. As an example to apply the newly developed MVL families, a half-adder is introduced.

Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-Ray Irradiation

CERN Document Server

Silvestri, M; Gerardin, Simone; Faccio, Federico; Paccagnella, Alessandro

2010-01-01

We present new experimental results on heavy ion-induced gate rupture on deep submicron CMOS transistor arrays. Through the use of dedicated test structures, composed by a large number of 130-nm MOSFETs connected in parallel, we show the response to heavy ion irradiation under high stress voltages of devices previously irradiated with X-rays. We found only a slight impact on gate rupture critical voltage at a LET of 32 MeV cm(2) mg(-1) for devices previously irradiated up to 3 Mrad(SiO2), and practically no change for 100 Mrad(SiO2) irradiation, dose of interest for the future super large hadron collider (SLHC).

Gated Treatment Delivery Verification With On-Line Megavoltage Fluoroscopy

International Nuclear Information System (INIS)

Tai An; Christensen, James D.; Gore, Elizabeth; Khamene, Ali; Boettger, Thomas; Li, X. Allen

2010-01-01

Purpose: To develop and clinically demonstrate the use of on-line real-time megavoltage (MV) fluoroscopy for gated treatment delivery verification. Methods and Materials: Megavoltage fluoroscopy (MVF) image sequences were acquired using a flat panel equipped for MV cone-beam CT in synchrony with the respiratory signal obtained from the Anzai gating device. The MVF images can be obtained immediately before or during gated treatment delivery. A prototype software tool (named RTReg4D) was developed to register MVF images with phase-sequenced digitally reconstructed radiograph images generated from the treatment planning system based on four-dimensional CT. The image registration can be used to reposition the patient before or during treatment delivery. To demonstrate the reliability and clinical usefulness, the system was first tested using a thoracic phantom and then prospectively in actual patient treatments under an institutional review board-approved protocol. Results: The quality of the MVF images for lung tumors is adequate for image registration with phase-sequenced digitally reconstructed radiographs. The MVF was found to be useful for monitoring inter- and intrafractional variations of tumor positions. With the planning target volume contour displayed on the MVF images, the system can verify whether the moving target stays within the planning target volume margin during gated delivery. Conclusions: The use of MVF images was found to be clinically effective in detecting discrepancies in tumor location before and during respiration-gated treatment delivery. The tools and process developed can be useful for gated treatment delivery verification.

Respiratory gating in positron emission tomography: A quantitative comparison of different gating schemes

International Nuclear Information System (INIS)

Dawood, Mohammad; Buether, Florian; Lang, Norbert; Schober, Otmar; Schaefers, Klaus P

2007-01-01

Respiratory gating is used for reducing the effects of breathing motion in a wide range of applications from radiotherapy treatment to diagnostical imaging. Different methods are feasible for respiratory gating. In this study seven gating methods were developed and tested on positron emission tomography (PET) listmode data. The results of seven patient studies were compared quantitatively with respect to motion and noise. (1) Equal and (2) variable time-based gating methods use only the time information of the breathing cycle to define respiratory gates. (3) Equal and (4) variable amplitude-based gating approaches utilize the amplitude of the respiratory signal. (5) Cycle-based amplitude gating is a combination of time and amplitude-based techniques. A baseline correction was applied to methods (3) and (4) resulting in two new approaches: Baseline corrected (6) equal and (7) variable amplitude-based gating. Listmode PET data from seven patients were acquired together with a respiratory signal. Images were reconstructed applying the seven gating methods. Two parameters were used to quantify the results: Motion was measured as the displacement of the heart due to respiration and noise was defined as the standard deviation of pixel intensities in a background region. The amplitude-based approaches (3) and (4) were superior to the time-based methods (1) and (2). The improvement in capturing the motion was more than 30% (up to 130%) in all subjects. The variable time (2) and amplitude (4) methods had a more uniform noise distribution among all respiratory gates compared to equal time (1) and amplitude (3) methods. Baseline correction did not improve the results. Out of seven different respiratory gating approaches, the variable amplitude method (4) captures the respiratory motion best while keeping a constant noise level among all respiratory phases

A gate drive circuit for gate-turn-off (GTO) devices in series stack

International Nuclear Information System (INIS)

Despe, O.

1999-01-01

A gate-turn-off (GTO) switch is under development at the Advanced Photon Source as a replacement for a thyratron switch in high power pulsed application. The high voltage in the application requires multiple GTOs connected in series. One component that is critical to the success of GTO operation is the gate drive circuit. The gate drive circuit has to provide fast high-current pulses to the GTO gate for fast turn-on and turn-off. It also has to be able to operate while floating at high voltage. This paper describes a gate drive circuit that meets these requirements

Shape changing collisions of optical solitons, universal logic gates ...

Indian Academy of Sciences (India)

... in optical media such as multicore fibers, photorefractive materials and so on. ... of logic gates and Turing equivalent all optical computers in homogeneous bulk media as shown by Steiglitz recently. ... Pramana – Journal of Physics | News.

Low-power DRAM-compatible Replacement Gate High-k/Metal Gate Stacks

Science.gov (United States)

Ritzenthaler, R.; Schram, T.; Bury, E.; Spessot, A.; Caillat, C.; Srividya, V.; Sebaai, F.; Mitard, J.; Ragnarsson, L.-Å.; Groeseneken, G.; Horiguchi, N.; Fazan, P.; Thean, A.

2013-06-01

In this work, the possibility of integration of High-k/Metal Gate (HKMG), Replacement Metal Gate (RMG) gate stacks for low power DRAM compatible transistors is studied. First, it is shown that RMG gate stacks used for Logic applications need to be seriously reconsidered, because of the additional anneal(s) needed in a DRAM process. New solutions are therefore developed. A PMOS stack HfO2/TiN with TiN deposited in three times combined with Work Function metal oxidations is demonstrated, featuring a very good Work Function of 4.95 eV. On the other hand, the NMOS side is shown to be a thornier problem to solve: a new solution based on the use of oxidized Ta as a diffusion barrier is proposed, and a HfO2/TiN/TaOX/TiAl/TiN/TiN gate stack featuring an aggressive Work Function of 4.35 eV (allowing a Work Function separation of 600 mV between NMOS and PMOS) is demonstrated. This work paves the way toward the integration of gate-last options for DRAM periphery transistors.

Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for Single-Event Gate Rupture and Single-Event Burnout

Science.gov (United States)

Scheick, Leif

2014-01-01

Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture's data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data. Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most commonly used power transistor. MOSFETs are typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single-event gate rupture (SEGR) or single-event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. See [1] through [5] for more information. The objective of this effort was to investigate the SEGR and SEB responses of two power MOSFETs recently produced. These tests will serve as a limited verification of these parts. It is acknowledged that further testing on the respective parts may be needed for some mission profiles.

Pulse sequences for suppressing leakage in single-qubit gate operations

Science.gov (United States)

Ghosh, Joydip; Coppersmith, S. N.; Friesen, Mark

2017-06-01

Many realizations of solid-state qubits involve couplings to leakage states lying outside the computational subspace, posing a threat to high-fidelity quantum gate operations. Mitigating leakage errors is especially challenging when the coupling strength is unknown, e.g., when it is caused by noise. Here we show that simple pulse sequences can be used to strongly suppress leakage errors for a qubit embedded in a three-level system. As an example, we apply our scheme to the recently proposed charge quadrupole (CQ) qubit for quantum dots. These results provide a solution to a key challenge for fault-tolerant quantum computing with solid-state elements.

Protected quantum computing: interleaving gate operations with dynamical decoupling sequences.

Science.gov (United States)

Zhang, Jingfu; Souza, Alexandre M; Brandao, Frederico Dias; Suter, Dieter

2014-02-07

Implementing precise operations on quantum systems is one of the biggest challenges for building quantum devices in a noisy environment. Dynamical decoupling attenuates the destructive effect of the environmental noise, but so far, it has been used primarily in the context of quantum memories. Here, we experimentally demonstrate a general scheme for combining dynamical decoupling with quantum logical gate operations using the example of an electron-spin qubit of a single nitrogen-vacancy center in diamond. We achieve process fidelities >98% for gate times that are 2 orders of magnitude longer than the unprotected dephasing time T2.

A Prospective Cohort Study of Gated Stereotactic Liver Radiation Therapy Using Continuous Internal Electromagnetic Motion Monitoring

DEFF Research Database (Denmark)

Worm, Esben S; Høyer, Morten; Hansen, Rune

2018-01-01

PURPOSE: Intrafraction motion can compromise the treatment accuracy in liver stereotactic body radiation therapy (SBRT). Respiratory gating can improve treatment delivery; however, gating based on external motion surrogates is inaccurate. The present study reports the use of Calypso-based internal...... electromagnetic motion monitoring for gated liver SBRT. METHODS AND MATERIALS: Fifteen patients were included in a study of 3-fraction respiratory gated liver SBRT guided by 3 implanted electromagnetic transponders. The planning target volume was created by a 5-mm axial and 7-mm (n = 12) or 10-mm (n = 3...

Security and gain improvement of a practical quantum key distribution using a gated single-photon source and probabilistic photon-number resolution

International Nuclear Information System (INIS)

Horikiri, Tomoyuki; Sasaki, Hideki; Wang, Haibo; Kobayashi, Takayoshi

2005-01-01

We propose a high security quantum key distribution (QKD) scheme utilizing one mode of spontaneous parametric downconversion gated by a photon number resolving detector. This photon number measurement is possible by using single-photon detectors operating at room temperature and optical fibers. By post selection, the multiphoton probability in this scheme can be reduced to lower than that of a scheme using an attenuated coherent light resulting in improvement of security. Furthermore, if distillation protocol (error correction and privacy amplification) is performed, the gain will be increased. Hence a QKD system with higher security and bit rate than the laser-based QKD system can be attained using present available technologies

High-fidelity quantum gates on quantum-dot-confined electron spins in low-Q optical microcavities

Science.gov (United States)

Li, Tao; Gao, Jian-Cun; Deng, Fu-Guo; Long, Gui-Lu

2018-04-01

We propose some high-fidelity quantum circuits for quantum computing on electron spins of quantum dots (QD) embedded in low-Q optical microcavities, including the two-qubit controlled-NOT gate and the multiple-target-qubit controlled-NOT gate. The fidelities of both quantum gates can, in principle, be robust to imperfections involved in a practical input-output process of a single photon by converting the infidelity into a heralded error. Furthermore, the influence of two different decay channels is detailed. By decreasing the quality factor of the present microcavity, we can largely increase the efficiencies of these quantum gates while their high fidelities remain unaffected. This proposal also has another advantage regarding its experimental feasibility, in that both quantum gates can work faithfully even when the QD-cavity systems are non-identical, which is of particular importance in current semiconductor QD technology.

Resonant Tunneling in Gated Vertical One- dimensional Structures

Science.gov (United States)

Kolagunta, V. R.; Janes, D. B.; Melloch, M. R.; Webb, K. J.

1997-03-01

Vertical sub-micron transistors incorporating resonant tunneling multiple quantum well heterostructures are interesting in applications for both multi-valued logic devices and the study of quantization effects in vertical quasi- one-, zero- dimensional structures. Earlier we have demonstrated room temperature pinch-off of the resonant peak in sub-micron vertical resonant tunneling transistors structures using a self-aligned sidewall gating technique ( V.R. Kolagunta et. al., Applied Physics Lett., 69), 374(1996). In this paper we present the study of gating effects in vertical multiple quantum well resonant tunneling transistors. Multiple well quasi-1-D sidewall gated transistors with mesa dimensions of L_x=0.5-0.9μm and L_y=10-40μm were fabricated. The quantum heterostructure in these devices consists of two non-symmetric (180 ÅÅi-GaAs wells separated from each other and from the top and bottom n^+ GaAs/contacts region using Al_0.3Ga_0.7As tunneling barriers. Room temperature pinch-off of the multiple resonant peaks similar to that reported in the case of single well devices is observed in these devices^1. Current-voltage characteristics at liquid nitrogen temperatures show splitting of the resonant peaks into sub-bands with increasing negative gate bias indicative of quasi- 1-D confinement. Room-temperature and low-temperature current-voltage measurements shall be presented and discussed.

Liquid–Solid Dual-Gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing

KAUST Repository

Zhang, Yu

2017-10-17

Liquid electrolyte-gated organic field effect transistors and organic electrochemical transistors have recently emerged as powerful technology platforms for sensing and simulation of living cells and organisms. For such applications, the transistors are operated at a gate voltage around or below 0.3 V because prolonged application of a higher voltage bias can lead to membrane rupturing and cell death. This constraint often prevents the operation of the transistors at their maximum transconductance or most sensitive regime. Here, we exploit a solid–liquid dual-gate organic transistor structure, where the threshold voltage of the liquid-gated conduction channel is controlled by an additional gate that is separated from the channel by a metal-oxide gate dielectric. With this design, the threshold voltage of the “sensing channel” can be linearly tuned in a voltage window exceeding 0.4 V. We have demonstrated that the dual-gate structure enables a much better sensor response to the detachment of human mesenchymal stem cells. In general, the capability of tuning the optimal sensing bias will not only improve the device performance but also broaden the material selection for cell-based organic bioelectronics.

Liquid-Solid Dual-Gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing.

Science.gov (United States)

Zhang, Yu; Li, Jun; Li, Rui; Sbircea, Dan-Tiberiu; Giovannitti, Alexander; Xu, Junling; Xu, Huihua; Zhou, Guodong; Bian, Liming; McCulloch, Iain; Zhao, Ni

2017-11-08

Liquid electrolyte-gated organic field effect transistors and organic electrochemical transistors have recently emerged as powerful technology platforms for sensing and simulation of living cells and organisms. For such applications, the transistors are operated at a gate voltage around or below 0.3 V because prolonged application of a higher voltage bias can lead to membrane rupturing and cell death. This constraint often prevents the operation of the transistors at their maximum transconductance or most sensitive regime. Here, we exploit a solid-liquid dual-gate organic transistor structure, where the threshold voltage of the liquid-gated conduction channel is controlled by an additional gate that is separated from the channel by a metal-oxide gate dielectric. With this design, the threshold voltage of the "sensing channel" can be linearly tuned in a voltage window exceeding 0.4 V. We have demonstrated that the dual-gate structure enables a much better sensor response to the detachment of human mesenchymal stem cells. In general, the capability of tuning the optimal sensing bias will not only improve the device performance but also broaden the material selection for cell-based organic bioelectronics.

A Rout to Protect Quantum Gates constructed via quantum walks from Noises.

Science.gov (United States)

Du, Yi-Mu; Lu, Li-Hua; Li, You-Quan

2018-05-08

The continuous-time quantum walk on a one-dimensional graph of odd number of sites with an on-site potential at the center is studied. We show that such a quantum-walk system can construct an X-gate of a single qubit as well as a control gate for two qubits, when the potential is much larger than the hopping strength. We investigate the decoherence effect and find that the coherence time can be enhanced by either increasing the number of sites on the graph or the ratio of the potential to the hopping strength, which is expected to motivate the design of the quantum gate with long coherence time. We also suggest several experimental proposals to realize such a system.

Electronic States of High-k Oxides in Gate Stack Structures

Science.gov (United States)

Zhu, Chiyu

In this dissertation, in-situ X-ray and ultraviolet photoemission spectroscopy have been employed to study the interface chemistry and electronic structure of potential high-k gate stack materials. In these gate stack materials, HfO2 and La2O3 are selected as high-k dielectrics, VO2 and ZnO serve as potential channel layer materials. The gate stack structures have been prepared using a reactive electron beam system and a plasma enhanced atomic layer deposition system. Three interrelated issues represent the central themes of the research: 1) the interface band alignment, 2) candidate high-k materials, and 3) band bending, internal electric fields, and charge transfer. 1) The most highlighted issue is the band alignment of specific high-k structures. Band alignment relationships were deduced by analysis of XPS and UPS spectra for three different structures: a) HfO2/VO2/SiO2/Si, b) HfO 2-La2O3/ZnO/SiO2/Si, and c) HfO 2/VO2/ HfO2/SiO2/Si. The valence band offset of HfO2/VO2, ZnO/SiO2 and HfO 2/SiO2 are determined to be 3.4 +/- 0.1, 1.5 +/- 0.1, and 0.7 +/- 0.1 eV. The valence band offset between HfO2-La2O3 and ZnO was almost negligible. Two band alignment models, the electron affinity model and the charge neutrality level model, are discussed. The results show the charge neutrality model is preferred to describe these structures. 2) High-k candidate materials were studied through comparison of pure Hf oxide, pure La oxide, and alloyed Hf-La oxide films. An issue with the application of pure HfO2 is crystallization which may increase the leakage current in gate stack structures. An issue with the application of pure La2O3 is the presence of carbon contamination in the film. Our study shows that the alloyed Hf-La oxide films exhibit an amorphous structure along with reduced carbon contamination. 3) Band bending and internal electric fields in the gate stack structure were observed by XPS and UPS and indicate the charge transfer during the growth and process. The oxygen

Analyzing the effect of gate dielectric on the leakage currents

Directory of Open Access Journals (Sweden)

Sakshi

2016-01-01

Full Text Available An analytical threshold voltage model for MOSFETs has been developed using different gate dielectric oxides by using MATLAB software. This paper explains the dependency of threshold voltage on the dielectric material. The variation in the subthreshold currents with the change in the threshold voltage sue to the change of dielectric material has also been studied.

Dual-Input AND Gate From Single-Channel Thin-Film FET

Science.gov (United States)

Miranda, F. A.; Pinto, N. J.; Perez, R.; Mueller, C. H.

2008-01-01

A regio-regular poly(3-hexylthiophene) (RRP3HT) thin-film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. RRP3HT is a semiconducting polymer that has a carrier mobility and on/off ratio when used in a field effect transistor (FET) configuration. This commercially available polymer is very soluble in common organic solvents and is easily processed to form uniform thin films. The most important polymer-based device fabricated and studied is the FET, since it forms the building block in logic circuits and switches for active matrix (light-emitting-diode) (LED) displays, smart cards, and radio frequency identification (RFID) cards.

A Review of Nanoscale Channel and Gate Engineered FINFETs for VLSI Mixed Signal Applications Using Zirconium-di-Oxide Dielectrics

Directory of Open Access Journals (Sweden)

D.Nirmal

2014-07-01

Full Text Available In the past, most of the research and development efforts in the area of CMOS and IC’s are oriented towards reducing the power and increasing the gain of the circuits. While focusing the attention on low power and high gain in the device, the materials of the device also been taken into consideration. In the present technology, Computationally intensive devices with low power dissipation and high gain are becoming a critical application domain. Several factors have contributed to this paradigm shift. The primary driving factor being the increase in scale of integration, the chip has to accommodate smaller and faster transistors than their predecessors. During the last decade semiconductor technology has been led by conventional scaling. Scaling, has been aimed towards higher speed, lower power and higher density of the semiconductor devices. However, as scaling approached its physical limits, it has become more difficult and challenging for fabrication industry. Therefore, tremendous research has been carried out to investigate the alternatives, and this led to the introduction of new Nano materials and concepts to overcome the difficulties in the device fabrications. In order to reduce the leakage current and parasitic capacitance in devices, gate oxide high-k dielectric materials are explored. Among the different high-k materials available the nano size Zirconium dioxide material is suggested as an alternate gate oxide material for devices due to its thermal stability and small grain size of material. To meet the requirements of ITRS roadmap 2012, the Multi gate devices are considered to be one of the most promising technologies for the future microelectronics industry due to its excellent immunity to short channel effects and high value of On current. The double gate or multi gate devices provide a better scalability option due to its excellent immunity to short-channel effects. Here the different high-k materials are replaced in different

Gated CT imaging using a free-breathing respiration signal from flow-volume spirometry

International Nuclear Information System (INIS)

D'Souza, Warren D.; Kwok, Young; Deyoung, Chad; Zacharapoulos, Nicholas; Pepelea, Mark; Klahr, Paul; Yu, Cedric X.

2005-01-01

Respiration-induced tumor motion is known to cause artifacts on free-breathing spiral CT images used in treatment planning. This leads to inaccurate delineation of target volumes on planning CT images. Flow-volume spirometry has been used previously for breath-holds during CT scans and radiation treatments using the active breathing control (ABC) system. We have developed a prototype by extending the flow-volume spirometer device to obtain gated CT scans using a PQ 5000 single-slice CT scanner. To test our prototype, we designed motion phantoms to compare image quality obtained with and without gated CT scan acquisition. Spiral and axial (nongated and gated) CT scans were obtained of phantoms with motion periods of 3-5 s and amplitudes of 0.5-2 cm. Errors observed in the volume estimate of these structures were as much as 30% with moving phantoms during CT simulation. Application of motion-gated CT with active breathing control reduced these errors to within 5%. Motion-gated CT was then implemented in patients and the results are presented for two clinical cases: lung and abdomen. In each case, gated scans were acquired at end-inhalation, end-exhalation in addition to a conventional free-breathing (nongated) scan. The gated CT scans revealed reduced artifacts compared with the conventional free-breathing scan. Differences of up to 20% in the volume of the structures were observed between gated and free-breathing scans. A comparison of the overlap of structures between the gated and free-breathing scans revealed misalignment of the structures. These results demonstrate the ability of flow-volume spirometry to reduce errors in target volumes via gating during CT imaging

Effective dark count rate reduction by modified SPAD gating circuit

Energy Technology Data Exchange (ETDEWEB)

Prochazka, Ivan; Blazej, Josef, E-mail: blazej@fjfi.cvut.cz; Kodet, Jan

2015-07-01

For our main application of single photon counting avalanche detectors in focus – laser ranging of space objects and laser time transfer – the ultimate requirements are relatively large and homogeneous active area having a diameter of 100 to 200 µm and a sub-picosecond stability of timing. The detector dark count rate and after-pulsing probability are parameters of relatively lower, but not negligible importance. In presented paper we will focused on them. We have developed a new active quenching and gating scheme which can reduce afterpulsing effect and hence also effective dark count rate at lower temperature. In satellite laser ranging system the effective dark count rate was reduced more than 35 times. This improvement will contribute in increasing the data yield and hence to increase precision and productivity. - Highlights: • Signal and quenching path in a control circuit stayed unaffected by gating. • The detector package optimized for laser time transfer systems is considered. • After-pulsing effect is reduced by a modification of the use of gate signal. • The dark count rate is reduced for gate rates of the order of units of kHz.

Role of respiratory-gated PET/CT for pancreatic tumors: A preliminary result

International Nuclear Information System (INIS)

Kasuya, Takeo; Tateishi, Ukihide; Suzuki, Kazufumi; Daisaki, Hiromitsu; Nishiyama, Yuji; Hata, Masaharu; Inoue, Tomio

2013-01-01

Purpose: The aim of this study is to ascertain role of respiratory-gated PET/CT for accurate diagnosis of pancreatic tumors. Materials and methods: Prior to clinical study, the phantom study was performed to evaluate the impact of respiratory motion on lesion quantification. Twenty-two patients (mean age 65 years) with pancreatic tumors were enrolled. Pathological diagnoses by surgical specimens consisted of pancreatic cancer (n = 15) and benign intraductal papillary mucinous neoplasm (IPMN, n = 7). Whole-body scan of non-respiratory-gated PET/CT was performed at first, and subsequent respiratory-gated PET/CT for one bed position was performed. All PET/CT studies were performed prior to surgery. The SUV max obtained by non-respiratory-gated PET/CT and respiratory-gated PET/CT, and percent difference in SUVmax (%SUVmax) were compared. Results: The profile curve of 5 respiratory bin image was most similar to that of static image. The third bin of 5 respiratory bin image showed highest FWHM (24.0 mm) and FWTM (32.7 mm). The mean SUVmax of pancreatic cancer was similar to that of benign IPMN on non-respiratory-gated PET/CT (p = 0.05), whereas significant difference was found between two groups on respiratory-gated PET/CT (p = 0.016). The mean %SUV of pancreatic cancer was greater than that of benign IPMN (p < 0.0001). Identification of the primary tumor in pancreatic head (n = 13, 59%) was improved by using respiratory-gated PET/CT because of minimal affection of physiological accumulation in duodenum. Conclusion: Respiratory-gated PET/CT is a feasible technique for evaluation of pancreatic tumors and allows more accurate identification of pancreatic tumors compared with non-respiratory-gated PET/CT

Practical Implementation, Characterization and Applications of a Multi-Colour Time-Gated Luminescence Microscope

Science.gov (United States)

Zhang, Lixin; Zheng, Xianlin; Deng, Wei; Lu, Yiqing; Lechevallier, Severine; Ye, Zhiqiang; Goldys, Ewa M.; Dawes, Judith M.; Piper, James A.; Yuan, Jingli; Verelst, Marc; Jin, Dayong

2014-10-01

Time-gated luminescence microscopy using long-lifetime molecular probes can effectively eliminate autofluorescence to enable high contrast imaging. Here we investigate a new strategy of time-gated imaging for simultaneous visualisation of multiple species of microorganisms stained with long-lived complexes under low-background conditions. This is realized by imaging two pathogenic organisms (Giardia lamblia stained with a red europium probe and Cryptosporidium parvum with a green terbium probe) at UV wavelengths (320-400 nm) through synchronization of a flash lamp with high repetition rate (1 kHz) to a robust time-gating detection unit. This approach provides four times enhancement in signal-to-background ratio over non-time-gated imaging, while the average signal intensity also increases six-fold compared with that under UV LED excitation. The high sensitivity is further confirmed by imaging the single europium-doped Y2O2S nanocrystals (150 nm). We report technical details regarding the time-gating detection unit and demonstrate its compatibility with commercial epi-fluorescence microscopes, providing a valuable and convenient addition to standard laboratory equipment.

An integrated bioimpedance—ECG gating technique for respiratory and cardiac motion compensation in cardiac PET

International Nuclear Information System (INIS)

Koivumäki, Tuomas; Nekolla, Stephan G; Fürst, Sebastian; Loher, Simone; Schwaiger, Markus; Vauhkonen, Marko; Hakulinen, Mikko A

2014-01-01

Respiratory motion may degrade image quality in cardiac PET imaging. Since cardiac PET studies often involve cardiac gating by ECG, a separate respiratory monitoring system is required increasing the logistic complexity of the examination, in case respiratory gating is also needed. Thus, we investigated the simultaneous acquisition of both respiratory and cardiac gating signals using II limb lead mimicking electrode configuration during cardiac PET scans of 11 patients. In addition to conventional static and ECG-gated images, bioimpedance technique was utilized to generate respiratory- and dual-gated images. The ability of the bioimpedance technique to monitor intrathoracic respiratory motion was assessed estimating cardiac displacement between end-inspiration and -expiration. The relevance of dual gating was evaluated in left ventricular volume and myocardial wall thickness measurements. An average 7.6  ±  3.3 mm respiratory motion was observed in the study population. Dual gating showed a small but significant increase (4 ml, p = 0.042) in left ventricular myocardial volume compared to plain cardiac gating. In addition, a thinner myocardial wall was observed in dual-gated images (9.3  ±  1.3 mm) compared to cardiac-gated images (11.3  ±  1.3 mm, p = 0.003). This study shows the feasibility of bioimpedance measurements for dual gating in a clinical setting. The method enables simultaneous acquisition of respiratory and cardiac gating signals using a single device with standard ECG electrodes. (paper)

Expert Oracle GoldenGate

CERN Document Server

Prusinski, Ben; Chung, Richard

2011-01-01

Expert Oracle GoldenGate is a hands-on guide to creating and managing complex data replication environments using the latest in database replication technology from Oracle. GoldenGate is the future in replication technology from Oracle, and aims to be best-of-breed. GoldenGate supports homogeneous replication between Oracle databases. It supports heterogeneous replication involving other brands such as Microsoft SQL Server and IBM DB2 Universal Server. GoldenGate is high-speed, bidirectional, highly-parallelized, and makes only a light impact on the performance of databases involved in replica

Incremental value of regional wall motion analysis immediately after exercise for the detection of single-vessel coronary artery disease. Study by separate acquisition, dual-isotope ECG-gated single-photon emission computed tomography

International Nuclear Information System (INIS)

Yoda, Shunichi; Sato, Yuichi; Matsumoto, Naoya; Tani, Shigemasa; Takayama, Tadateru; Uchiyama, Takahisa; Saito, Satoshi

2005-01-01

Although the detection of wall motion abnormalities gives incremental value to myocardial perfusion single-photon emission computed tomography (SPECT) in the diagnosis of extensive coronary artery disease (CAD) and high-grade single-vessel CAD, whether or not it is useful in the diagnosis of mild, single-vessel CAD has not been studied previously. Separate acquisition, dual isotope electrocardiogram (ECG)-gated SPECT was performed in 97 patients with a low likelihood of CAD (Group 1) and 46 patients with single-vessel CAD (Group 2). Mild CAD was defined by stenosis of 50-75% (Group 2a, n=22) and moderate to severe CAD was defined by stenosis ≥76% (Group 2b, n=24). Myocardial perfusion and wall motion were graded by a 5 point-scale, 20-segment model. The sensitivity of myocardial perfusion alone was 50% for Group 2a, 83% for Group 2b and 67% for Group 2 as a whole. The overall specificity was 90%. When the wall motion analysis was combined, the sensitivity was increased to 82% in Group 2a and 92% in Group 2b. The ability to detect a wall motion abnormality immediately after exercise gives incremental diagnostic value to myocardial perfusion SPECT in the identification of mild, single-vessel CAD. (author)

Quantum Privacy Amplification for a Sequence of Single Qubits

International Nuclear Information System (INIS)

Deng Fuguo; Long Guilu

2006-01-01

We present a scheme for quantum privacy amplification (QPA) for a sequence of single qubits. The QPA procedure uses a unitary operation with two controlled-not gates and a Hadamard gate. Every two qubits are performed with the unitary gate operation, and a measurement is made on one photon and the other one is retained. The retained qubit carries the state information of the discarded one. In this way, the information leakage is reduced. The procedure can be performed repeatedly so that the information leakage is reduced to any arbitrarily low level. With this QPA scheme, the quantum secure direct communication with single qubits can be implemented with arbitrarily high security. We also exploit this scheme to do privacy amplification on the single qubits in quantum information sharing for long-distance communication with quantum repeaters.

Highly enhanced avalanche probability using sinusoidally-gated silicon avalanche photodiode

Energy Technology Data Exchange (ETDEWEB)

Suzuki, Shingo; Namekata, Naoto, E-mail: nnao@phys.cst.nihon-u.ac.jp; Inoue, Shuichiro [Institute of Quantum Science, Nihon University, 1-8-14 Kanda-Surugadai, Chiyoda-ku, Tokyo 101-8308 (Japan); Tsujino, Kenji [Tokyo Women' s Medical University, 8-1 Kawada-cho, Shinjuku-ku, Tokyo 162-8666 (Japan)

2014-01-27

We report on visible light single photon detection using a sinusoidally-gated silicon avalanche photodiode. Detection efficiency of 70.6% was achieved at a wavelength of 520 nm when an electrically cooled silicon avalanche photodiode with a quantum efficiency of 72.4% was used, which implies that a photo-excited single charge carrier in a silicon avalanche photodiode can trigger a detectable avalanche (charge) signal with a probability of 97.6%.

Exact gate sequences for universal quantum computation using the XY interaction alone

International Nuclear Information System (INIS)

Kempe, J.; Whaley, K.B.

2002-01-01

In a previous publication [J. Kempe et al., Quantum Computation and Information (Rinton Press, Princeton, NJ, 2001), Vol. 1, special issue, p. 33] we showed that it is possible to implement universal quantum computation with the anisotropic XY-Heisenberg exchange acting as a single interaction. To achieve this we used encodings of the states of the computation into a larger Hilbert space. This proof is nonconstructive, however, and did not explicitly give the trade-offs in time that are required to implement encoded single-qubit operations and encoded two-qubit gates. Here we explicitly give the gate sequences needed to simulate these operations on encoded qubits and qutrits (three-level systems) and analyze the trade-offs involved. We also propose a possible layout for the qubits in a triangular arrangement

Conducting single-molecule magnet materials.

Science.gov (United States)

Cosquer, Goulven; Shen, Yongbing; Almeida, Manuel; Yamashita, Masahiro

2018-05-11

Multifunctional molecular materials exhibiting electrical conductivity and single-molecule magnet (SMM) behaviour are particularly attractive for electronic devices and related applications owing to the interaction between electronic conduction and magnetization of unimolecular units. The preparation of such materials remains a challenge that has been pursued by a bi-component approach of combination of SMM cationic (or anionic) units with conducting networks made of partially oxidized (or reduced) donor (or acceptor) molecules. The present status of the research concerning the preparation of molecular materials exhibiting SMM behaviour and electrical conductivity is reviewed, describing the few molecular compounds where both SMM properties and electrical conductivity have been observed. The evolution of this research field through the years is discussed. The first reported compounds are semiconductors in spite being able to present relatively high electrical conductivity, and the SMM behaviour is observed at low temperatures where the electrical conductivity of the materials is similar to that of an insulator. During the recent years, a breakthrough has been achieved with the coexistence of high electrical conductivity and SMM behaviour in a molecular compound at the same temperature range, but so far without evidence of a synergy between these properties. The combination of high electrical conductivity with SMM behaviour requires not only SMM units but also the regular and as far as possible uniform packing of partially oxidized molecules, which are able to provide a conducting network.

The mechanism of fast-gate opening in ClC-0.

Science.gov (United States)

Engh, Anita M; Faraldo-Gómez, José D; Maduke, Merritt

2007-10-01

ClC-0 is a chloride channel whose gating is sensitive to both voltage and chloride. Based on analysis of gating kinetics using single-channel recordings, a five-state model was proposed to describe the dependence of ClC-0 fast-gate opening on voltage and external chloride (Chen, T.-Y., and C. Miller. 1996. J. Gen. Physiol. 108:237-250). We aimed to use this five-state model as a starting point for understanding the structural changes that occur during gating. Using macroscopic patch recordings, we were able to reproduce the effects of voltage and chloride that were reported by Chen and Miller and to fit our opening rate constant data to the five-state model. Upon further analysis of both our data and those of Chen and Miller, we learned that in contrast to their conclusions, (a) the features in the data are not adequate to rule out a simpler four-state model, and (b) the chloride-binding step is voltage dependent. In order to be able to evaluate the effects of mutants on gating (described in the companion paper, see Engh et al. on p. 351 of this issue), we developed a method for determining the error on gating model parameters, and evaluated the sources of this error. To begin to mesh the kinetic model(s) with the known CLC structures, a model of ClC-0 was generated computationally based on the X-ray crystal structure of the prokaryotic homolog ClC-ec1. Analysis of pore electrostatics in this homology model suggests that at least two of the conclusions derived from the gating kinetics analysis are consistent with the known CLC structures: (1) chloride binding is necessary for channel opening, and (2) chloride binding to any of the three known chloride-binding sites must be voltage dependent.

High performance organic field-effect transistors with ultra-thin HfO2 gate insulator deposited directly onto the organic semiconductor

International Nuclear Information System (INIS)

Ono, S.; Häusermann, R.; Chiba, D.; Shimamura, K.; Ono, T.; Batlogg, B.

2014-01-01

We have produced stable organic field-effect transistors (OFETs) with an ultra-thin HfO 2 gate insulator deposited directly on top of rubrene single crystals by atomic layer deposition (ALD). We find that ALD is a gentle deposition process to grow thin films without damaging rubrene single crystals, as results these devices have a negligibly small threshold voltage and are very stable against gate-bias-stress, and the mobility exceeds 1 cm 2 /V s. Moreover, the devices show very little degradation even when kept in air for more than 2 months. These results demonstrate thin HfO 2 layers deposited by ALD to be well suited as high capacitance gate dielectrics in OFETs operating at small gate voltage. In addition, the dielectric layer acts as an effective passivation layer to protect the organic semiconductor

Interface engineering and reliability characteristics of hafnium dioxide with poly silicon gate and dual metal (ruthenium-tantalum alloy, ruthenium) gate electrode for beyond 65 nm technology

Science.gov (United States)

Kim, Young-Hee

Chip density and performance improvements have been driven by aggressive scaling of semiconductor devices. In both logic and memory applications, SiO 2 gate dielectrics has reached its physical limit, direct tunneling resulting from scaling down of dielectrics thickness. Therefore high-k dielectrics have attracted a great deal of attention from industries as the replacement of conventional SiO2 gate dielectrics. So far, lots of candidate materials have been evaluated and Hf-based high-k dielectrics were chosen to the promising materials for gate dielectrics. However, lots of issues were identified and more thorough researches were carried out on Hf-based high-k dielectrics. For instances, mobility degradation, charge trapping, crystallization, Fermi level pinning, interface engineering, and reliability studies. In this research, reliability study of HfO2 were explored with poly gate and dual metal (Ru-Ta alloy, Ru) gate electrode as well as interface engineering. Hard breakdown and soft breakdown were compared and Weibull slope of soft breakdown was smaller than that of hard breakdown, which led to a potential high-k scaling issue. Dynamic reliability has been studied and the combination of trapping and detrapping contributed the enhancement of lifetime projection. Polarity dependence was shown that substrate injection might reduce lifetime projection as well as it increased soft breakdown behavior. Interface tunneling mechanism was suggested with dual metal gate technology. Soft breakdown (l st breakdown) was mainly due to one layer breakdown of bi-layer structure. Low weibull slope was in part attributed to low barrier height of HfO 2 compared to interface layer. Interface layer engineering was thoroughly studied in terms of mobility, swing, and short channel effect using deep sub-micron MOSFET devices. In fact, Hf-based high-k dielectrics could be scaled down to below EOT of ˜10A and it successfully achieved the competitive performance goals. However, it is

Nanofluidics in two-dimensional layered materials: inspirations from nature.

Science.gov (United States)

Gao, Jun; Feng, Yaping; Guo, Wei; Jiang, Lei

2017-08-29

With the advance of chemistry, materials science, and nanotechnology, significant progress has been achieved in the design and application of synthetic nanofluidic devices and materials, mimicking the gating, rectifying, and adaptive functions of biological ion channels. Fundamental physics and chemistry behind these novel transport phenomena on the nanoscale have been explored in depth on single-pore platforms. However, toward real-world applications, one major challenge is to extrapolate these single-pore devices into macroscopic materials. Recently, inspired partially by the layered microstructure of nacre, the material design and large-scale integration of artificial nanofluidic devices have stepped into a completely new stage, termed 2D nanofluidics. Unique advantages of the 2D layered materials have been found, such as facile and scalable fabrication, high flux, efficient chemical modification, tunable channel size, etc. These features enable wide applications in, for example, biomimetic ion transport manipulation, molecular sieving, water treatment, and nanofluidic energy conversion and storage. This review highlights the recent progress, current challenges, and future perspectives in this emerging research field of "2D nanofluidics", with emphasis on the thought of bio-inspiration.

Controlling the layer localization of gapless states in bilayer graphene with a gate voltage

Science.gov (United States)

Jaskólski, W.; Pelc, M.; Bryant, Garnett W.; Chico, Leonor; Ayuela, A.

2018-04-01

Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their origin. We find that the gate potential controls the layer localization of the two states, which switches non-trivially between layers depending on the applied gate voltage magnitude. We also show how these bilayer gapless states arise from bands of single-layer graphene by analyzing the formation of carbon bonds between layers. Based on this analysis we provide a model Hamiltonian with analytical solutions, which explains the layer localization as a function of the ratio between the applied potential and interlayer hopping. Our results open a route for the manipulation of gapless states in electronic devices, analogous to the proposed writing and reading memories in topological insulators.

Charge Saturation and Intrinsic Doping in Electrolyte-Gated Organic Semiconductors.

Science.gov (United States)

Atallah, Timothy L; Gustafsson, Martin V; Schmidt, Elliot; Frisbie, C Daniel; Zhu, X-Y

2015-12-03

Electrolyte gating enables low voltage operation of organic thin film transistors, but little is known about the nature of the electrolyte/organic interface. Here we apply charge-modulation Fourier transform infrared spectroscopy, in conjunction with electrical measurements, on a model electrolyte gated organic semiconductor interface: single crystal rubrene/ion-gel. We provide spectroscopic signature for free-hole like carriers in the organic semiconductor and unambiguously show the presence of a high density of intrinsic doping of the free holes upon formation of the rubrene/ion-gel interface, without gate bias (Vg = 0 V). We explain this intrinsic doping as resulting from a thermodynamic driving force for the stabilization of free holes in the organic semiconductor by anions in the ion-gel. Spectroscopy also reveals the saturation of free-hole like carrier density at the rubrene/ion-gel interface at Vg < -0.5 V, which is commensurate with the negative transconductance seen in transistor measurements.

Large-Area CVD-Grown Sub-2 V ReS2 Transistors and Logic Gates.

Science.gov (United States)

Dathbun, Ajjiporn; Kim, Youngchan; Kim, Seongchan; Yoo, Youngjae; Kang, Moon Sung; Lee, Changgu; Cho, Jeong Ho

2017-05-10

We demonstrated the fabrication of large-area ReS 2 transistors and logic gates composed of a chemical vapor deposition (CVD)-grown multilayer ReS 2 semiconductor channel and graphene electrodes. Single-layer graphene was used as the source/drain and coplanar gate electrodes. An ion gel with an ultrahigh capacitance effectively gated the ReS 2 channel at a low voltage, below 2 V, through a coplanar gate. The contact resistance of the ion gel-gated ReS 2 transistors with graphene electrodes decreased dramatically compared with the SiO 2 -devices prepared with Cr electrodes. The resulting transistors exhibited good device performances, including a maximum electron mobility of 0.9 cm 2 /(V s) and an on/off current ratio exceeding 10 4 . NMOS logic devices, such as NOT, NAND, and NOR gates, were assembled using the resulting transistors as a proof of concept demonstration of the applicability of the devices to complex logic circuits. The large-area synthesis of ReS 2 semiconductors and graphene electrodes and their applications in logic devices open up new opportunities for realizing future flexible electronics based on 2D nanomaterials.

Patient training in respiratory-gated radiotherapy

International Nuclear Information System (INIS)

Kini, Vijay R.; Vedam, Subrahmanya S.; Keall, Paul J.; Patil, Sumukh; Chen, Clayton; Mohan, Radhe

2003-01-01

Respiratory gating is used to counter the effects of organ motion during radiotherapy for chest tumors. The effects of variations in patient breathing patterns during a single treatment and from day to day are unknown. We evaluated the feasibility of using patient training tools and their effect on the breathing cycle regularity and reproducibility during respiratory-gated radiotherapy. To monitor respiratory patterns, we used a component of a commercially available respiratory-gated radiotherapy system (Real Time Position Management (RPM) System, Varian Oncology Systems, Palo Alto, CA 94304). This passive marker video tracking system consists of reflective markers placed on the patient's chest or abdomen, which are detected by a wall-mounted video camera. Software installed on a PC interfaced to this camera detects the marker motion digitally and records it. The marker position as a function of time serves as the motion signal that may be used to trigger imaging or treatment. The training tools used were audio prompting and visual feedback, with free breathing as a control. The audio prompting method used instructions to 'breathe in' or 'breathe out' at periodic intervals deduced from patients' own breathing patterns. In the visual feedback method, patients were shown a real-time trace of their abdominal wall motion due to breathing. Using this, they were asked to maintain a constant amplitude of motion. Motion traces of the abdominal wall were recorded for each patient for various maneuvers. Free breathing showed a variable amplitude and frequency. Audio prompting resulted in a reproducible frequency; however, the variability and the magnitude of amplitude increased. Visual feedback gave a better control over the amplitude but showed minor variations in frequency. We concluded that training improves the reproducibility of amplitude and frequency of patient breathing cycles. This may increase the accuracy of respiratory-gated radiation therapy

Simultaneous ECG-gated PET imaging of multiple mice

International Nuclear Information System (INIS)

Seidel, Jurgen; Bernardo, Marcelino L.; Wong, Karen J.; Xu, Biying; Williams, Mark R.; Kuo, Frank; Jagoda, Elaine M.; Basuli, Falguni; Li, Changhui; Griffiths, Gary L.

2014-01-01

Introduction: We describe and illustrate a method for creating ECG-gated PET images of the heart for each of several mice imaged at the same time. The method is intended to increase “throughput” in PET research studies of cardiac dynamics or to obtain information derived from such studies, e.g. tracer concentration in end-diastolic left ventricular blood. Methods: An imaging bed with provisions for warming, anesthetic delivery, etc., was fabricated by 3D printing to allow simultaneous PET imaging of two side-by-side mice. After electrode attachment, tracer injection and placement of the animals in the scanner field of view, ECG signals from each animal were continuously analyzed and independent trigger markers generated whenever an R-wave was detected in each signal. PET image data were acquired in “list” mode and these trigger markers were inserted into this list along with the image data. Since each mouse is in a different spatial location in the FOV, sorting of these data using trigger markers first from one animal and then the other yields two independent and correctly formed ECG-gated image sequences that reflect the dynamical properties of the heart during an “average” cardiac cycle. Results: The described method yields two independent ECG-gated image sequences that exhibit the expected properties in each animal, e.g. variation of the ventricular cavity volumes from maximum to minimum and back during the cardiac cycle in the processed animal with little or no variation in these volumes during the cardiac cycle in the unprocessed animal. Conclusion: ECG-gated image sequences for each of several animals can be created from a single list mode data collection using the described method. In principle, this method can be extended to more than two mice (or other animals) and to other forms of physiological gating, e.g. respiratory gating, when several subjects are imaged at the same time

Estimating accidental coincidences for pixelated PET detectors and singles list-mode acquisition

International Nuclear Information System (INIS)

Rafecas, M.; Torres, I.; Spanoudaki, V.; McElroy, D.P.; Ziegler, S.I.

2007-01-01

We have studied the validity of random estimation techniques for various low energy thresholds (LETs) and single list-mode data sets in small animal PET. While a LET below 255 keV helps to increase the sensitivity, it also results in an increase of random coincidences and inter-crystal scatter (ICS). The study is carried out for MADPET-II, a dual-layer positron emission tomography (PET) scanner prototype consisting of LSO crystals read out individually by APDs. The data are acquired in singles list-mode format, and coincidences are computed post-acquisition. To estimate randoms, we have used the delayed coincidence window method (DW), and the singles rate model (SR). Various phantoms were simulated using GATE. For LETs under 255 keV, the number of random events R, estimated using the SR and the DW methods, is larger than the number of randoms which was directly computed from GATE simulations, and R(SR)>R(DW)>R(GATE). The higher the LET, the smaller the overestimation. For LETs >255 keV, R(DW)/R(GATE) ∼1. If scattered singles were excluded from the file, this discrepancy between R(DW or SR) and R(GATE) significantly diminished. This fact points out to ICS as the effect responsible for the mismatch, since for LETs lower than 255 keV, all singles related to an ICS event can be detected independently, thus altering the singles rate. Therefore, if low LETs are used, random estimation techniques should account for ICS

Novel Quantum Dot Gate FETs and Nonvolatile Memories Using Lattice-Matched II-VI Gate Insulators

Science.gov (United States)

Jain, F. C.; Suarez, E.; Gogna, M.; Alamoody, F.; Butkiewicus, D.; Hohner, R.; Liaskas, T.; Karmakar, S.; Chan, P.-Y.; Miller, B.; Chandy, J.; Heller, E.

2009-08-01

This paper presents the successful use of ZnS/ZnMgS and other II-VI layers (lattice-matched or pseudomorphic) as high- k gate dielectrics in the fabrication of quantum dot (QD) gate Si field-effect transistors (FETs) and nonvolatile memory structures. Quantum dot gate FETs and nonvolatile memories have been fabricated in two basic configurations: (1) monodispersed cladded Ge nanocrystals (e.g., GeO x -cladded-Ge quantum dots) site-specifically self-assembled over the lattice-matched ZnMgS gate insulator in the channel region, and (2) ZnTe-ZnMgTe quantum dots formed by self-organization, using metalorganic chemical vapor-phase deposition (MOCVD), on ZnS-ZnMgS gate insulator layers grown epitaxially on Si substrates. Self-assembled GeO x -cladded Ge QD gate FETs, exhibiting three-state behavior, are also described. Preliminary results on InGaAs-on-InP FETs, using ZnMgSeTe/ZnSe gate insulator layers, are presented.

Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor.

Science.gov (United States)

Kim, Wonjae; Riikonen, Juha; Li, Changfeng; Chen, Ya; Lipsanen, Harri

2013-10-04

Using single-layer CVD graphene, a complementary field effect transistor (FET) device is fabricated on the top of separated back-gates. The local back-gate control of the transistors, which operate with low bias at room temperature, enables highly tunable device characteristics due to separate control over electrostatic doping of the channels. Local back-gating allows control of the doping level independently of the supply voltage, which enables device operation with very low VDD. Controllable characteristics also allow the compensation of variation in the unintentional doping typically observed in CVD graphene. Moreover, both p-n and n-p configurations of FETs can be achieved by electrostatic doping using the local back-gate. Therefore, the device operation can also be switched from inverter to voltage controlled resistor, opening new possibilities in using graphene in logic circuitry.

Novel technique of source and drain engineering for dual-material double-gate (DMDG) SOI MOSFETS

Science.gov (United States)

Yadav, Himanshu; Malviya, Abhishek Kumar; Chauhan, R. K.

2018-04-01

The dual-metal dual-gate (DMDG) SOI has been used with Dual Sided Source and Drain Engineered 50nm SOI MOSFET with various high-k gate oxide. It has been scrutinized in this work to enhance its electrical performance. The proposed structure is designed by creating Dual Sided Source and Drain Modification and its characteristics are evaluated on ATLAS device simulator. The consequence of this dual sided assorted doping on source and drain side of the DMDG transistor has better leakage current immunity and heightened ION current with higher ION to IOFF Ratio. Which thereby vesting the proposed device appropriate for low power digital applications.

Universal gate-set for trapped-ion qubits using a narrow linewidth diode laser

International Nuclear Information System (INIS)

Akerman, Nitzan; Navon, Nir; Kotler, Shlomi; Glickman, Yinnon; Ozeri, Roee

2015-01-01

We report on the implementation of a high fidelity universal gate-set on optical qubits based on trapped 88 Sr + ions for the purpose of quantum information processing. All coherent operations were performed using a narrow linewidth diode laser. We employed a master-slave configuration for the laser, where an ultra low expansion glass Fabry–Perot cavity is used as a stable reference as well as a spectral filter. We characterized the laser spectrum using the ions with a modified Ramsey sequence which eliminated the affect of the magnetic field noise. We demonstrated high fidelity single qubit gates with individual addressing, based on inhomogeneous micromotion, on a two-ion chain as well as the Mølmer–Sørensen two-qubit entangling gate. (paper)

Step-and-shoot prospectively ECG-gated vs. retrospectively ECG-gated with tube current modulation coronary CT angiography using 128-slice MDCT patients with chest pain: diagnostic performance and radiation dose

International Nuclear Information System (INIS)

Kim, Jeong Su; Choo, Ki Seok; Jeong, Dong Wook

2011-01-01

Background With increasing awareness for radiation exposure, the study of diagnostic accuracy of coronary CT angiography (CCTA) with low radiation dose techniques is mandatory to both radiologist and clinician. Purpose To compare diagnostic performance and effective radiation dose between step-and-shoot prospectively ECG-gated and retrospectively ECG-gated with tube current modulation (TCM) CCTA using 128-slice multidetector computed tomography (MDCT). Material and Methods We retrospectively evaluated 60 patients who underwent CCTA with either of two different low-dose techniques using 128-slice MDCT (23 patients for step-and shoot-prospectively ECG-gated and 37 patients for retrospectively ECG-gated with TCM CCTA) followed by conventional coronary angiography. All coronary arteries and all segments thereof, except anatomical variants or small size (< 1.5 mm) ones, were included in analysis. Results In per-segment analysis, sensitivity, specificity, positive predictive value, and negative predictive value were 91/96%, 95/94%, 75/73%, and 98/99% for step-and-shoot prospectively ECG-gated and retrospectively ECG gated with TCM CCTA, respectively, relative to conventional coronary angiography. Effective radiation dose were 1.75 ± 0.83 mSv, 4.91 ± 1.71 mSv in the step-and-shoot prospectively ECG-gated and retrospectively ECG-gated with TCM CCTA groups, respectively. Conclusion The two low-radiation dose CCTA techniques using 128-slice MDCT yields comparable diagnostic performance for coronary artery disease in symptomatic patients with low heart rates

Development of III-V p-MOSFETs with high-kappa gate stack for future CMOS applications

Science.gov (United States)

Nagaiah, Padmaja

As the semiconductor industry approaches the limits of traditional silicon CMOS scaling, non-silicon materials and new device architectures are gradually being introduced to improve Si integrated circuit performance and continue transistor scaling. Recently, the replacement of SiO2 with a high-k material (HfO2) as gate dielectric has essentially removed one of the biggest advantages of Si as channel material. As a result, alternate high mobility materials are being considered to replace Si in the channel to achieve higher drive currents and switching speeds. III-V materials in particular have become of great interest as channel materials, owing to their superior electron transport properties. However, there are several critical challenges that need to be addressed before III-V based CMOS can replace Si CMOS technology. Some of these challenges include development of a high quality, thermally stable gate dielectric/III-V interface, and improvement in III-V p-channel hole mobility to complement the n-channel mobility, low source/drain resistance and integration onto Si substrate. In this thesis, we would be addressing the first two issues i.e. the development high performance III-V p-channels and obtaining high quality III-V/high-k interface. We start with using the device architecture of the already established InGaAs n-channels as a baseline to understand the effect of remote scattering from the high-k oxide and oxide/semiconductor interface on channel transport properties such as electron mobility and channel electron concentration. Temperature dependent Hall electron mobility measurements were performed to separate various scattering induced mobility limiting factors. Dependence of channel mobility on proximity of the channel to the oxide interface, oxide thickness, annealing conditions are discussed. The results from this work will be used in the design of the p-channel MOSFETs. Following this, InxGa1-xAs (x>0.53) is chosen as channel material for developing p

All-optical XOR logic gate using intersubband transition in III-V quantum well materials.

Science.gov (United States)

Feng, Jijun; Akimoto, Ryoichi; Gozu, Shin-ichiro; Mozume, Teruo

2014-06-02

A monolithically integrated all-optical exclusive-OR (XOR) logic gate is experimentally demonstrated based on a Michelson interferometer (MI) gating device in InGaAs/AlAsSb coupled double quantum wells (CDQWs). The MI arms can convert the pump data with return-to-zero ON-OFF keying (RZ OOK) to binary phase-shift keying (BPSK) format, then two BPSK signals can interfere with each other for realizing a desired logical operation. All-optical format conversion from the RZ OOK to BPSK is based on the cross-phase modulation to the transverse electric (TE) probe wave, which is caused by the intersubband transition excited by the transverse magnetic (TM) pump light. Bit error rate measurements show that error free operation for both BPSK format conversion and XOR logical operation can be achieved.

New opening hours of the gates

CERN Multimedia

GS Department

2009-01-01

Please note the new opening hours of the gates as well as the intersites tunnel from the 19 May 2009: GATE A 7h - 19h GATE B 24h/24 GATE C 7h - 9h\t17h - 19h GATE D 8h - 12h\t13h - 16h GATE E 7h - 9h\t17h - 19h Prévessin 24h/24 The intersites tunnel will be opened from 7h30 to 18h non stop. GS-SEM Group Infrastructure and General Services Department

Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

Energy Technology Data Exchange (ETDEWEB)

Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

2014-10-20

High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

International Nuclear Information System (INIS)

Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong

2014-01-01

High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

Quantitative analysis of a fault tree with priority AND gates

International Nuclear Information System (INIS)

Yuge, T.; Yanagi, S.

2008-01-01

A method for calculating the exact top event probability of a fault tree with priority AND gates and repeated basic events is proposed when the minimal cut sets are given. A priority AND gate is an AND gate where the input events must occur in a prescribed order for the occurrence of the output event. It is known that the top event probability of such a dynamic fault tree is obtained by converting the tree into an equivalent Markov model. However, this method is not realistic for a complex system model because the number of states which should be considered in the Markov analysis increases explosively as the number of basic events increases. To overcome the shortcomings of the Markov model, we propose an alternative method to obtain the top event probability in this paper. We assume that the basic events occur independently, exponentially distributed, and the component whose failure corresponds to the occurrence of the basic event is non-repairable. First, we obtain the probability of occurrence of the output event of a single priority AND gate by Markov analysis. Then, the top event probability is given by a cut set approach and the inclusion-exclusion formula. An efficient procedure to obtain the probabilities corresponding to logical products in the inclusion-exclusion formula is proposed. The logical product which is composed of two or more priority AND gates having at least one common basic event as their inputs is transformed into the sum of disjoint events which are equivalent to a priority AND gate in the procedure. Numerical examples show that our method works well for complex systems

Cylindrical gate all around Schottky barrier MOSFET with insulated shallow extensions at source/drain for removal of ambipolarity: a novel approach

Science.gov (United States)

Kumar, Manoj; Pratap, Yogesh; Haldar, Subhasis; Gupta, Mridula; Gupta, R. S.

2017-12-01

In this paper TCAD-based simulation of a novel insulated shallow extension (ISE) cylindrical gate all around (CGAA) Schottky barrier (SB) MOSFET has been reported, to eliminate the suicidal ambipolar behavior (bias-dependent OFF state leakage current) of conventional SB-CGAA MOSFET by blocking the metal-induced gap states as well as unwanted charge sharing between source/channel and drain/channel regions. This novel structure offers low barrier height at the source and offers high ON-state current. The I ON/I OFF of ISE-CGAA-SB-MOSFET increases by 1177 times and offers steeper subthreshold slope (~60 mV/decade). However a little reduction in peak cut off frequency is observed and to further improve the cut-off frequency dual metal gate architecture has been employed and a comparative assessment of single metal gate, dual metal gate, single metal gate with ISE, and dual metal gate with ISE has been presented. The improved performance of Schottky barrier CGAA MOSFET by the incorporation of ISE makes it an attractive candidate for CMOS digital circuit design. The numerical simulation is performed using the ATLAS-3D device simulator.

Mesoscopic Rydberg Gate Based on Electromagnetically Induced Transparency

International Nuclear Information System (INIS)

Mueller, M.; Lesanovsky, I.; Zoller, P.; Weimer, H.; Buechler, H. P.

2009-01-01

We demonstrate theoretically a parallelized C-NOT gate which allows us to entangle a mesoscopic ensemble of atoms with a single control atom in a single step, with high fidelity and on a microsecond time scale. Our scheme relies on the strong and long-ranged interaction between Rydberg atoms triggering electromagnetically induced transparency. By this we can robustly implement a conditional transfer of all ensemble atoms between two logical states, depending on the state of the control atom. We outline a many-body interferometer which allows a comparison of two many-body quantum states by performing a measurement of the control atom.

An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor

Energy Technology Data Exchange (ETDEWEB)

Moghadam, Reza M. [Department; Xiao, Zhiyong [Department; Ahmadi-Majlan, Kamyar [Department; Grimley, Everett D. [Department; Bowden, Mark [Environmental; amp, Biological Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Ong, Phuong-Vu [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Chambers, Scott A. [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Lebeau, James M. [Department; Hong, Xia [Department; Sushko, Peter V. [Physical; amp, Computational Sciences Directorate, Pacific Northwest National Laboratory, Richland, Washington 99352, United States; Ngai, Joseph H. [Department

2017-09-13

The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic or memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x= 0.7) that has been epitaxially grown on Ge. We find that the ferroelectric properties of SrZrxTi1-xO3 are exceptionally robust, as gate layers as thin as 5 nm give rise to hysteretic capacitance-voltage characteristics that are 2 V in width. The development of ferroelectric MOS capacitors with gate thicknesses that are technologically relevant opens a pathway to realize scalable ferroelectric field-effect devices.

Leakage and field emission in side-gate graphene field effect transistors

Energy Technology Data Exchange (ETDEWEB)

Di Bartolomeo, A., E-mail: dibant@sa.infn.it; Iemmo, L.; Romeo, F.; Cucolo, A. M. [Physics Department “E.R. Caianiello,” University of Salerno, via G. Paolo II, 84084 Fisciano (Italy); CNR-SPIN Salerno, via G. Paolo II, 84084 Fisciano (Italy); Giubileo, F. [CNR-SPIN Salerno, via G. Paolo II, 84084 Fisciano (Italy); Russo, S.; Unal, S. [Physics Department, University of Exeter, Stocker Road 6, Exeter, Devon EX4 4QL (United Kingdom); Passacantando, M.; Grossi, V. [Department of Physical and Chemical Sciences, University of L' Aquila, Via Vetoio, 67100 Coppito, L' Aquila (Italy)

2016-07-11

We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm from the 500 nm wide graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1 V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO{sub 2}/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO{sub 2} up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at higher voltages. We report a field-emission current density as high as 1 μA/μm between graphene flakes. These findings are important for the miniaturization of atomically thin devices.

Direct-write fabrication of a nanoscale digital logic element on a single nanowire

International Nuclear Information System (INIS)

Roy, Somenath; Gao Zhiqiang

2010-01-01

In this paper we report on the 'direct-write' fabrication and electrical characteristics of a nanoscale logic inverter, integrating enhancement-mode (E-mode) and depletion-mode (D-mode) field-effect transistors (FETs) on a single zinc oxide (ZnO) nanowire. 'Direct-writing' of platinum metal electrodes and a dielectric layer is executed on individual single-crystalline ZnO nanowires using either a focused electron beam (FEB) or a focused ion beam (FIB). We fabricate a top-gate FET structure, in which the gate electrode wraps around the ZnO nanowire, resulting in a more efficient gate response than the conventional back-gate nanowire transistors. For E-mode device operation, the gate electrode (platinum) is deposited directly onto the ZnO nanowire by a FEB, which creates a Schottky barrier and in turn a fully depleted channel. Conversely, sandwiching an insulating layer between the FIB-deposited gate electrode and the nanowire channel makes D-mode operation possible. Integrated E- and D-mode FETs on a single nanowire exhibit the characteristics of a direct-coupled FET logic (DCFL) inverter with a high gain and noise margin.

Optical XOR gate

Science.gov (United States)

Vawter, G. Allen

2013-11-12

An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Intrinsic respiratory gating in small-animal CT

International Nuclear Information System (INIS)

Bartling, Soenke H.; Dinkel, Julien; Kauczor, Hans-Ulrich; Stiller, Wolfram; Semmler, Wolfhard; Grasruck, Michael; Madisch, Ijad; Gupta, Rajiv; Kiessling, Fabian

2008-01-01

Gating in small-animal CT imaging can compensate artefacts caused by physiological motion during scanning. However, all published gating approaches for small animals rely on additional hardware to derive the gating signals. In contrast, in this study a novel method of intrinsic respiratory gating of rodents was developed and tested for mice (n=5), rats (n=5) and rabbits (n=2) in a flat-panel cone-beam CT system. In a consensus read image quality was compared with that of non-gated and retrospective extrinsically gated scans performed using a pneumatic cushion. In comparison to non-gated images, image quality improved significantly using intrinsic and extrinsic gating. Delineation of diaphragm and lung structure improved in all animals. Image quality of intrinsically gated CT was judged to be equivalent to extrinsically gated ones. Additionally 4D datasets were calculated using both gating methods. Values for expiratory, inspiratory and tidal lung volumes determined with the two gating methods were comparable and correlated well with values known from the literature. We could show that intrinsic respiratory gating in rodents makes additional gating hardware and preparatory efforts superfluous. This method improves image quality and allows derivation of functional data. Therefore it bears the potential to find wide applications in small-animal CT imaging. (orig.)

Intelligent layered nanoflare: ``lab-on-a-nanoparticle'' for multiple DNA logic gate operations and efficient intracellular delivery

Science.gov (United States)

Yang, Bin; Zhang, Xiao-Bing; Kang, Li-Ping; Huang, Zhi-Mei; Shen, Guo-Li; Yu, Ru-Qin; Tan, Weihong

2014-07-01

DNA strand displacement cascades have been engineered to construct various fascinating DNA circuits. However, biological applications are limited by the insufficient cellular internalization of naked DNA structures, as well as the separated multicomponent feature. In this work, these problems are addressed by the development of a novel DNA nanodevice, termed intelligent layered nanoflare, which integrates DNA computing at the nanoscale, via the self-assembly of DNA flares on a single gold nanoparticle. As a ``lab-on-a-nanoparticle'', the intelligent layered nanoflare could be engineered to perform a variety of Boolean logic gate operations, including three basic logic gates, one three-input AND gate, and two complex logic operations, in a digital non-leaky way. In addition, the layered nanoflare can serve as a programmable strategy to sequentially tune the size of nanoparticles, as well as a new fingerprint spectrum technique for intelligent multiplex biosensing. More importantly, the nanoflare developed here can also act as a single entity for intracellular DNA logic gate delivery, without the need of commercial transfection agents or other auxiliary carriers. By incorporating DNA circuits on nanoparticles, the presented layered nanoflare will broaden the applications of DNA circuits in biological systems, and facilitate the development of DNA nanotechnology.DNA strand displacement cascades have been engineered to construct various fascinating DNA circuits. However, biological applications are limited by the insufficient cellular internalization of naked DNA structures, as well as the separated multicomponent feature. In this work, these problems are addressed by the development of a novel DNA nanodevice, termed intelligent layered nanoflare, which integrates DNA computing at the nanoscale, via the self-assembly of DNA flares on a single gold nanoparticle. As a ``lab-on-a-nanoparticle'', the intelligent layered nanoflare could be engineered to perform a variety of

Reconfigurable logic via gate controlled domain wall trajectory in magnetic network structure

Science.gov (United States)

Murapaka, C.; Sethi, P.; Goolaup, S.; Lew, W. S.

2016-01-01

An all-magnetic logic scheme has the advantages of being non-volatile and energy efficient over the conventional transistor based logic devices. In this work, we present a reconfigurable magnetic logic device which is capable of performing all basic logic operations in a single device. The device exploits the deterministic trajectory of domain wall (DW) in ferromagnetic asymmetric branch structure for obtaining different output combinations. The programmability of the device is achieved by using a current-controlled magnetic gate, which generates a local Oersted field. The field generated at the magnetic gate influences the trajectory of the DW within the structure by exploiting its inherent transverse charge distribution. DW transformation from vortex to transverse configuration close to the output branch plays a pivotal role in governing the DW chirality and hence the output. By simply switching the current direction through the magnetic gate, two universal logic gate functionalities can be obtained in this device. Using magnetic force microscopy imaging and magnetoresistance measurements, all basic logic functionalities are demonstrated. PMID:26839036

Carbon Nanotube Self-Gating Diode and Application in Integrated Circuits.

Science.gov (United States)

Si, Jia; Liu, Lijun; Wang, Fanglin; Zhang, Zhiyong; Peng, Lian-Mao

2016-07-26

A nano self-gating diode (SGD) based on nanoscale semiconducting material is proposed, simulated, and realized on semiconducting carbon nanotubes (CNTs) through a doping-free fabrication process. The relationships between the performance and material/structural parameters of the SGD are explored through numerical simulation and verified by experiment results. Based on these results, performance optimization strategy is outlined, and high performance CNT SGDs are fabricated and demonstrated to surpass other published CNT diodes. In particular the CNT SGD exhibits high rectifier factor of up to 1.4 × 10(6) while retains large on-state current. Benefiting from high yield and stability, CNT SGDs are used for constructing logic and analog integrated circuits. Two kinds of basic digital gates (AND and OR) have been realized on chip through using CNT SGDs and on-chip Ti wire resistances, and a full wave rectifier circuit has been demonstrated through using two CNT SGDs. Although demonstrated here using CNT SGDs, this device structure may in principle be implemented using other semiconducting nanomaterials, to provide ideas and building blocks for electronic applications based on nanoscale materials.

Extension of a data-driven gating technique to 3D, whole body PET studies

International Nuclear Information System (INIS)

Schleyer, Paul J; O'Doherty, Michael J; Marsden, Paul K

2011-01-01

Respiratory gating can be used to separate a PET acquisition into a series of near motion-free bins. This is typically done using additional gating hardware; however, software-based methods can derive the respiratory signal from the acquired data itself. The aim of this work was to extend a data-driven respiratory gating method to acquire gated, 3D, whole body PET images of clinical patients. The existing method, previously demonstrated with 2D, single bed-position data, uses a spectral analysis to find regions in raw PET data which are subject to respiratory motion. The change in counts over time within these regions is then used to estimate the respiratory signal of the patient. In this work, the gating method was adapted to only accept lines of response from a reduced set of axial angles, and the respiratory frequency derived from the lung bed position was used to help identify the respiratory frequency in all other bed positions. As the respiratory signal does not identify the direction of motion, a registration-based technique was developed to align the direction for all bed positions. Data from 11 clinical FDG PET patients were acquired, and an optical respiratory monitor was used to provide a hardware-based signal for comparison. All data were gated using both the data-driven and hardware methods, and reconstructed. The centre of mass of manually defined regions on gated images was calculated, and the overall displacement was defined as the change in the centre of mass between the first and last gates. The mean displacement was 10.3 mm for the data-driven gated images and 9.1 mm for the hardware gated images. No significant difference was found between the two gating methods when comparing the displacement values. The adapted data-driven gating method was demonstrated to successfully produce respiratory gated, 3D, whole body, clinical PET acquisitions.

LRET Determination of Molecular Distances during pH Gating of the Mammalian Inward Rectifier Kir1.1b.

Science.gov (United States)

Nanazashvili, Mikheil; Sánchez-Rodríguez, Jorge E; Fosque, Ben; Bezanilla, Francisco; Sackin, Henry

2018-01-09

Gating of the mammalian inward rectifier Kir1.1 at the helix bundle crossing (HBC) by intracellular pH is believed to be mediated by conformational changes in the C-terminal domain (CTD). However, the exact motion of the CTD during Kir gating remains controversial. Crystal structures and single-molecule fluorescence resonance energy transfer of KirBac channels have implied a rigid body rotation and/or a contraction of the CTD as possible triggers for opening of the HBC gate. In our study, we used lanthanide-based resonance energy transfer on single-Cys dimeric constructs of the mammalian renal inward rectifier, Kir1.1b, incorporated into anionic liposomes plus PIP 2 , to determine unambiguous, state-dependent distances between paired Cys residues on diagonally opposite subunits. Functionality and pH dependence of our proteoliposome channels were verified in separate electrophysiological experiments. The lanthanide-based resonance energy transfer distances measured in closed (pH 6) and open (pH 8) conditions indicated neither expansion nor contraction of the CTD during gating, whereas the HBC gate widened by 8.8 ± 4 Å, from 6.3 ± 2 to 15.1 ± 6 Å, during opening. These results are consistent with a Kir gating model in which rigid body rotation of the large CTD around the permeation axis is correlated with opening of the HBC hydrophobic gate, allowing permeation of a 7 Å hydrated K ion. Copyright © 2017 Biophysical Society. Published by Elsevier Inc. All rights reserved.

Efficient experimental design of high-fidelity three-qubit quantum gates via genetic programming

Science.gov (United States)

Devra, Amit; Prabhu, Prithviraj; Singh, Harpreet; Arvind; Dorai, Kavita

2018-03-01

We have designed efficient quantum circuits for the three-qubit Toffoli (controlled-controlled-NOT) and the Fredkin (controlled-SWAP) gate, optimized via genetic programming methods. The gates thus obtained were experimentally implemented on a three-qubit NMR quantum information processor, with a high fidelity. Toffoli and Fredkin gates in conjunction with the single-qubit Hadamard gates form a universal gate set for quantum computing and are an essential component of several quantum algorithms. Genetic algorithms are stochastic search algorithms based on the logic of natural selection and biological genetics and have been widely used for quantum information processing applications. We devised a new selection mechanism within the genetic algorithm framework to select individuals from a population. We call this mechanism the "Luck-Choose" mechanism and were able to achieve faster convergence to a solution using this mechanism, as compared to existing selection mechanisms. The optimization was performed under the constraint that the experimentally implemented pulses are of short duration and can be implemented with high fidelity. We demonstrate the advantage of our pulse sequences by comparing our results with existing experimental schemes and other numerical optimization methods.

Dose modulated retrospective ECG-gated versus non-gated 64-row CT angiography of the aorta at the same radiation dose: Comparison of motion artifacts, diagnostic confidence and signal-to-noise-ratios

International Nuclear Information System (INIS)

Schernthaner, Ruediger E.; Stadler, Alfred; Beitzke, Dietrich; Homolka, Peter; Weber, Michael; Lammer, Johannes; Czerny, Martin; Loewe, Christian

2012-01-01

Purpose: To compare ECG-gated and non-gated CT angiography of the aorta at the same radiation dose, with regard to motion artifacts (MA), diagnostic confidence (DC) and signal-to-noise-ratios (SNRs). Materials and methods: Sixty consecutive patients prospectively randomized into two groups underwent 64-row CT angiography, with or without dose-modulated ECG-gating, of the entire aorta, due to several pathologies of the ascending aorta. MA and DC were both assessed using a four-point scale. SNRs were calculated by dividing the mean enhancement by the standard deviation. The dose-length-product (DLP) of each examination was recorded and the effective dose was estimated. Results: Dose-modulated ECG-gating showed statistically significant advantages over non-gated CT angiography, with regard to MA (p < 0.001) and DC (p < 0.001), at the aortic valve, at the origin of the coronary arteries, and at the dissection membrane, with a significant correlation (p < 0.001) between MA and DC. At the aortic wall, however, ECG-gated CT angiography showed statistically significant fewer MA (p < 0.001), but not a statistically significant higher DC (p = 0.137) compared to non-gated CT angiography. At the supra-aortic vessels and the descending aorta, the ECG-triggering showed no statistically significant differences with regard to MA (p = 0.861 and 0.526, respectively) and DC (p = 1.88 and 0.728, respectively). The effective dose of ECG-gated CT angiography (23.24 mSv; range, 18.43–25.94 mSv) did not differ significantly (p = 0.051) from that of non-gated CT angiography (24.28 mSv; range, 19.37–29.27 mSv). Conclusion: ECG-gated CT angiography of the entire aorta reduces MA and results in a higher DC with the same SNR, compared to non-gated CT angiography at the same radiation dose.

Water-gel for gating graphene transistors.

Science.gov (United States)

Kim, Beom Joon; Um, Soong Ho; Song, Woo Chul; Kim, Yong Ho; Kang, Moon Sung; Cho, Jeong Ho

2014-05-14

Water, the primary electrolyte in biology, attracts significant interest as an electrolyte-type dielectric material for transistors compatible with biological systems. Unfortunately, the fluidic nature and low ionic conductivity of water prevents its practical usage in such applications. Here, we describe the development of a solid state, megahertz-operating, water-based gate dielectric system for operating graphene transistors. The new electrolyte systems were prepared by dissolving metal-substituted DNA polyelectrolytes into water. The addition of these biocompatible polyelectrolytes induced hydrogelation to provide solid-state integrity to the system. They also enhanced the ionic conductivities of the electrolytes, which in turn led to the quick formation of an electric double layer at the graphene/electrolyte interface that is beneficial for modulating currents in graphene transistors at high frequencies. At the optimized conditions, the Na-DNA water-gel-gated flexible transistors and inverters were operated at frequencies above 1 MHz and 100 kHz, respectively.

Quantum gate decomposition algorithms.

Energy Technology Data Exchange (ETDEWEB)

Slepoy, Alexander

2006-07-01

Quantum computing algorithms can be conveniently expressed in a format of a quantum logical circuits. Such circuits consist of sequential coupled operations, termed ''quantum gates'', or quantum analogs of bits called qubits. We review a recently proposed method [1] for constructing general ''quantum gates'' operating on an qubits, as composed of a sequence of generic elementary ''gates''.

Single Electron Tunneling

International Nuclear Information System (INIS)

Ruggiero, Steven T.

2005-01-01

Financial support for this project has led to advances in the science of single-electron phenomena. Our group reported the first observation of the so-called ''Coulomb Staircase'', which was produced by tunneling into ultra-small metal particles. This work showed well-defined tunneling voltage steps of width e/C and height e/RC, demonstrating tunneling quantized on the single-electron level. This work was published in a now well-cited Physical Review Letter. Single-electron physics is now a major sub-field of condensed-matter physics, and fundamental work in the area continues to be conducted by tunneling in ultra-small metal particles. In addition, there are now single-electron transistors that add a controlling gate to modulate the charge on ultra-small photolithographically defined capacitive elements. Single-electron transistors are now at the heart of at least one experimental quantum-computer element, and single-electron transistor pumps may soon be used to define fundamental quantities such as the farad (capacitance) and the ampere (current). Novel computer technology based on single-electron quantum dots is also being developed. In related work, our group played the leading role in the explanation of experimental results observed during the initial phases of tunneling experiments with the high-temperature superconductors. When so-called ''multiple-gap'' tunneling was reported, the phenomenon was correctly identified by our group as single-electron tunneling in small grains in the material. The main focus throughout this project has been to explore single electron phenomena both in traditional tunneling formats of the type metal/insulator/particles/insulator/metal and using scanning tunneling microscopy to probe few-particle systems. This has been done under varying conditions of temperature, applied magnetic field, and with different materials systems. These have included metals, semi-metals, and superconductors. Amongst a number of results, we have

Return on experience on control gates in nuclear power station

International Nuclear Information System (INIS)

Valendru, N.

2009-01-01

In application of an EDF internal directive, control gates are used at the exit of the Controlled Areas of each nuclear power station site for the radiological control of materials or wastes on pedestrians and vehicles. The author first presents the radiological control chain for people and its principles. This chain comprises the different controls performed within the controlled area, either at the exit of a works area or at the exit of the reactor building, the different controls performed at the exit of the controlled area (depending on the site classification), the control of pedestrians at the site exit, and the 'whole body' anthropo-gamma-metric control. For each of these controls, the authors indicate the detection objectives, the different contamination threshold values, and the type of gate used. In a second part, the authors more precisely present the new C2 gates which include gamma and beta sensors, indicate how control thresholds are adjusted on different power station sites, and discuss the lessons learned after the first years of use of these new gates (difficulties and problems faced as far as detection and detection thresholds are concerned, changes in organization)

Carbon nanotubes for gas detection: materials preparation and device assembly

International Nuclear Information System (INIS)

Terranova, M L; Lucci, M; Orlanducci, S; Tamburri, E; Sessa, V; Reale, A; Carlo, A Di

2007-01-01

An efficient sensing device for NH 3 and NO x detection has been realized using ordered arrays of single-walled C nanotubes deposited onto an interdigitated electrode platform operating at room temperature. The sensing material has been prepared using several chemical-physical techniques for purification and positioning of the nanotubes inside the electrode gaps. In particular, both DC and AC fields have been applied in order to move and to align the nanostructures by electrophoresis and dielectrophoresis processes. We investigated the effects of different voltages applied to a gate contact on the back side of the substrate on the performances of the device and found that for different gas species (NH 3 , NO x ) a constant gate bias increases the sensitivity for gas detection. Moreover, in this paper we demonstrate that a pulsed bias applied to the gate contact facilitates the gas interaction with the nanotubes, either reducing the absorption times or accelerating the desorption times, thus providing a fast acceleration and a dramatic improvement of the time dependent behaviour of the device

Mixed gated/exhaustive service in a polling model with priorities

NARCIS (Netherlands)

Boon, M.A.A.; Adan, I.J.B.F.

2008-01-01

In this paper we consider a single-server polling system with switch-over times. We introduce a new service discipline, mixed gated/exhaustive service, that can be used for queues with two types of customers: high and low priority customers. At the beginning of a visit of the server to such a queue,

ZIF-8 gate tuning via terminal group modification: a computational study

KAUST Repository

Zheng, Bin; Wang, Lian Li; Du, Lifei; Huang, Kuo-Wei; Du, Huiling

2016-01-01

Tuning the pore structure of zeolitic imidazolate frameworks (ZIFs) enables unique control of their material properties. In this work, we used computational methods to examine the gate structure of ZIF-8 tuned by substitution terminal groups

Respiratory trace feature analysis for the prediction of respiratory-gated PET quantification

Science.gov (United States)

Wang, Shouyi; Bowen, Stephen R.; Chaovalitwongse, W. Art; Sandison, George A.; Grabowski, Thomas J.; Kinahan, Paul E.

2014-02-01

The benefits of respiratory gating in quantitative PET/CT vary tremendously between individual patients. Respiratory pattern is among many patient-specific characteristics that are thought to play an important role in gating-induced imaging improvements. However, the quantitative relationship between patient-specific characteristics of respiratory pattern and improvements in quantitative accuracy from respiratory-gated PET/CT has not been well established. If such a relationship could be estimated, then patient-specific respiratory patterns could be used to prospectively select appropriate motion compensation during image acquisition on a per-patient basis. This study was undertaken to develop a novel statistical model that predicts quantitative changes in PET/CT imaging due to respiratory gating. Free-breathing static FDG-PET images without gating and respiratory-gated FDG-PET images were collected from 22 lung and liver cancer patients on a PET/CT scanner. PET imaging quality was quantified with peak standardized uptake value (SUVpeak) over lesions of interest. Relative differences in SUVpeak between static and gated PET images were calculated to indicate quantitative imaging changes due to gating. A comprehensive multidimensional extraction of the morphological and statistical characteristics of respiratory patterns was conducted, resulting in 16 features that characterize representative patterns of a single respiratory trace. The six most informative features were subsequently extracted using a stepwise feature selection approach. The multiple-regression model was trained and tested based on a leave-one-subject-out cross-validation. The predicted quantitative improvements in PET imaging achieved an accuracy higher than 90% using a criterion with a dynamic error-tolerance range for SUVpeak values. The results of this study suggest that our prediction framework could be applied to determine which patients would likely benefit from respiratory motion compensation

Respiratory trace feature analysis for the prediction of respiratory-gated PET quantification

International Nuclear Information System (INIS)

Wang, Shouyi; Chaovalitwongse, W Art; Bowen, Stephen R; Kinahan, Paul E; Sandison, George A; Grabowski, Thomas J

2014-01-01

The benefits of respiratory gating in quantitative PET/CT vary tremendously between individual patients. Respiratory pattern is among many patient-specific characteristics that are thought to play an important role in gating-induced imaging improvements. However, the quantitative relationship between patient-specific characteristics of respiratory pattern and improvements in quantitative accuracy from respiratory-gated PET/CT has not been well established. If such a relationship could be estimated, then patient-specific respiratory patterns could be used to prospectively select appropriate motion compensation during image acquisition on a per-patient basis. This study was undertaken to develop a novel statistical model that predicts quantitative changes in PET/CT imaging due to respiratory gating. Free-breathing static FDG-PET images without gating and respiratory-gated FDG-PET images were collected from 22 lung and liver cancer patients on a PET/CT scanner. PET imaging quality was quantified with peak standardized uptake value (SUV peak ) over lesions of interest. Relative differences in SUV peak between static and gated PET images were calculated to indicate quantitative imaging changes due to gating. A comprehensive multidimensional extraction of the morphological and statistical characteristics of respiratory patterns was conducted, resulting in 16 features that characterize representative patterns of a single respiratory trace. The six most informative features were subsequently extracted using a stepwise feature selection approach. The multiple-regression model was trained and tested based on a leave-one-subject-out cross-validation. The predicted quantitative improvements in PET imaging achieved an accuracy higher than 90% using a criterion with a dynamic error-tolerance range for SUV peak values. The results of this study suggest that our prediction framework could be applied to determine which patients would likely benefit from respiratory motion

Self-gated fat-suppressed cardiac cine MRI.

Science.gov (United States)

Ingle, R Reeve; Santos, Juan M; Overall, William R; McConnell, Michael V; Hu, Bob S; Nishimura, Dwight G

2015-05-01

To develop a self-gated alternating repetition time balanced steady-state free precession (ATR-SSFP) pulse sequence for fat-suppressed cardiac cine imaging. Cardiac gating is computed retrospectively using acquired magnetic resonance self-gating data, enabling cine imaging without the need for electrocardiogram (ECG) gating. Modification of the slice-select rephasing gradients of an ATR-SSFP sequence enables the acquisition of a one-dimensional self-gating readout during the unused short repetition time (TR). Self-gating readouts are acquired during every TR of segmented, breath-held cardiac scans. A template-matching algorithm is designed to compute cardiac trigger points from the self-gating signals, and these trigger points are used for retrospective cine reconstruction. The proposed approach is compared with ECG-gated ATR-SSFP and balanced steady-state free precession in 10 volunteers and five patients. The difference of ECG and self-gating trigger times has a variability of 13 ± 11 ms (mean ± SD). Qualitative reviewer scoring and ranking indicate no statistically significant differences (P > 0.05) between self-gated and ECG-gated ATR-SSFP images. Quantitative blood-myocardial border sharpness is not significantly different among self-gated ATR-SSFP ( 0.61±0.15 mm -1), ECG-gated ATR-SSFP ( 0.61±0.15 mm -1), or conventional ECG-gated balanced steady-state free precession cine MRI ( 0.59±0.15 mm -1). The proposed self-gated ATR-SSFP sequence enables fat-suppressed cardiac cine imaging at 1.5 T without the need for ECG gating and without decreasing the imaging efficiency of ATR-SSFP. © 2014 Wiley Periodicals, Inc.

Highly flexible SRAM cells based on novel tri-independent-gate FinFET

Science.gov (United States)

Liu, Chengsheng; Zheng, Fanglin; Sun, Yabin; Li, Xiaojin; Shi, Yanling

2017-10-01

In this paper, a novel tri-independent-gate (TIG) FinFET is proposed for highly flexible SRAM cells design. To mitigate the read-write conflict, two kinds of SRAM cells based on TIG FinFETs are designed, and high tradeoff are obtained between read stability and speed. Both cells can offer multi read operations for frequency requirement with single voltage supply. In the first TIG FinFET SRAM cell, the strength of single-fin access transistor (TIG FinFET) can be flexibly adjusted by selecting five different modes to meet the needs of dynamic frequency design. Compared to the previous double-independent-gate (DIG) FinFET SRAM cell, 12.16% shorter read delay can be achieved with only 1.62% read stability decrement. As for the second TIG FinFET SRAM cell, pass-gate feedback technology is applied and double-fin TIG FinFETs are used as access transistors to solve the severe write-ability degradation. Three modes exist to flexibly adjust read speed and stability, and 68.2% larger write margin and 51.7% shorter write delay are achieved at only the expense of 26.2% increase in leakage power, with the same layout area as conventional FinFET SRAM cell.

Fringing field effects in negative capacitance field-effect transistors with a ferroelectric gate insulator

Science.gov (United States)

Hattori, Junichi; Fukuda, Koichi; Ikegami, Tsutomu; Ota, Hiroyuki; Migita, Shinji; Asai, Hidehiro; Toriumi, Akira

2018-04-01

We study the effects of fringing electric fields on the behavior of negative-capacitance (NC) field-effect transistors (FETs) with a silicon-on-insulator body and a gate stack consisting of an oxide film, an internal metal film, a ferroelectric film, and a gate electrode using our own device simulator that can properly handle the complicated relationship between the polarization and the electric field in ferroelectric materials. The behaviors of such NC FETs and the corresponding metal-oxide-semiconductor (MOS) FETs are simulated and compared with each other to evaluate the effects of the NC of the ferroelectric film. Then, the fringing field effects are evaluated by comparing the NC effects in NC FETs with and without gate spacers. The fringing field between the gate stack, especially the internal metal film, and the source/drain region induces more charges at the interface of the film with the ferroelectric film. Accordingly, the function of the NC to modulate the gate voltage and the resulting function to improve the subthreshold swing are enhanced. We also investigate the relationships of these fringing field effects to the drain voltage and four design parameters of NC FETs, i.e., gate length, gate spacer permittivity, internal metal film thickness, and oxide film thickness.

The mathematics of a quantum Hamiltonian computing half adder Boolean logic gate

International Nuclear Information System (INIS)

Dridi, G; Julien, R; Hliwa, M; Joachim, C

2015-01-01

The mathematics behind the quantum Hamiltonian computing (QHC) approach of designing Boolean logic gates with a quantum system are given. Using the quantum eigenvalue repulsion effect, the QHC AND, NAND, OR, NOR, XOR, and NXOR Hamiltonian Boolean matrices are constructed. This is applied to the construction of a QHC half adder Hamiltonian matrix requiring only six quantum states to fullfil a half Boolean logical truth table. The QHC design rules open a nano-architectronic way of constructing Boolean logic gates inside a single molecule or atom by atom at the surface of a passivated semi-conductor. (paper)

The mathematics of a quantum Hamiltonian computing half adder Boolean logic gate.

Science.gov (United States)

Dridi, G; Julien, R; Hliwa, M; Joachim, C

2015-08-28

The mathematics behind the quantum Hamiltonian computing (QHC) approach of designing Boolean logic gates with a quantum system are given. Using the quantum eigenvalue repulsion effect, the QHC AND, NAND, OR, NOR, XOR, and NXOR Hamiltonian Boolean matrices are constructed. This is applied to the construction of a QHC half adder Hamiltonian matrix requiring only six quantum states to fullfil a half Boolean logical truth table. The QHC design rules open a nano-architectronic way of constructing Boolean logic gates inside a single molecule or atom by atom at the surface of a passivated semi-conductor.

Low band-to-band tunnelling and gate tunnelling current in novel nanoscale double-gate architecture: simulations and investigation

International Nuclear Information System (INIS)

Datta, Deepanjan; Ganguly, Samiran; Dasgupta, S

2007-01-01

Large band-to-band tunnelling (BTBT) and gate leakage current can limit scalability of nanoscale devices. In this paper, we have proposed a novel nanoscale parallel connected heteromaterial double gate (PCHEM-DG) architecture with triple metal gate which significantly suppress BTBT leakage, making it efficient for low power design in the sub-10 nm regime. We have also proposed a triple gate device with p + poly-n + poly-p + poly gate which has substantially low gate leakage over symmetric DG MOSFET. Simulations are performed using a 2D Poisson-Schroedinger simulator and verified with a 2D device simulator ATLAS. We conclude that, due to intrinsic body doping, negligible gate leakage, suppressed BTBT over symmetric DG devices, metal gate (MG) PCHEM-DG MOSFET is efficient for low power circuit design in the nanometre regime

Visualization of neonatal coronary arteries on multidetector row CT: ECG-gated versus non-ECG-gated technique

International Nuclear Information System (INIS)

Tsai, I.C.; Lee, Tain; Chen, Min-Chi; Fu, Yun-Ching; Jan, Sheng-Lin; Wang, Chung-Chi; Chang, Yen

2007-01-01

Multidetector CT (MDCT) seems to be a promising tool for detection of neonatal coronary arteries, but whether the ECG-gated or non-ECG-gated technique should be used has not been established. To compare the detection rate and image quality of neonatal coronary arteries on MDCT using ECG-gated and non-ECG-gated techniques. Twelve neonates with complex congenital heart disease were included. The CT scan was acquired using an ECG-gated technique, and the most quiescent phase of the RR interval was selected to represent the ECG-gated images. The raw data were then reconstructed without the ECG signal to obtain non-ECG-gated images. The detection rate and image quality of nine coronary artery segments in the two sets of images were then compared. A two-tailed paired t test was used with P values <0.05 considered as statistically significant. In all coronary segments the ECG-gated technique had a better detection rate and produced images of better quality. The difference between the two techniques ranged from 25% in the left main coronary artery to 100% in the distal right coronary artery. For neonates referred for MDCT, if evaluation of coronary artery anatomy is important for the clinical management or surgical planning, the ECG-gated technique should be used because it can reliably detect the coronary arteries. (orig.)

Flexible and re-configurable optical three-input XOR logic gate of phase-modulated signals with multicast functionality for potential application in optical physical-layer network coding.

Science.gov (United States)

Lu, Guo-Wei; Qin, Jun; Wang, Hongxiang; Ji, XuYuefeng; Sharif, Gazi Mohammad; Yamaguchi, Shigeru

2016-02-08

Optical logic gate, especially exclusive-or (XOR) gate, plays important role in accomplishing photonic computing and various network functionalities in future optical networks. On the other hand, optical multicast is another indispensable functionality to efficiently deliver information in optical networks. In this paper, for the first time, we propose and experimentally demonstrate a flexible optical three-input XOR gate scheme for multiple input phase-modulated signals with a 1-to-2 multicast functionality for each XOR operation using four-wave mixing (FWM) effect in single piece of highly-nonlinear fiber (HNLF). Through FWM in HNLF, all of the possible XOR operations among input signals could be simultaneously realized by sharing a single piece of HNLF. By selecting the obtained XOR components using a followed wavelength selective component, the number of XOR gates and the participant light in XOR operations could be flexibly configured. The re-configurability of the proposed XOR gate and the function integration of the optical logic gate and multicast in single device offer the flexibility in network design and improve the network efficiency. We experimentally demonstrate flexible 3-input XOR gate for four 10-Gbaud binary phase-shift keying signals with a multicast scale of 2. Error-free operations for the obtained XOR results are achieved. Potential application of the integrated XOR and multicast function in network coding is also discussed.

Spatiotemporal processing of gated cardiac SPECT images using deformable mesh modeling

International Nuclear Information System (INIS)

Brankov, Jovan G.; Yang Yongyi; Wernick, Miles N.

2005-01-01

In this paper we present a spatiotemporal processing approach, based on deformable mesh modeling, for noise reduction in gated cardiac single-photon emission computed tomography images. Because of the partial volume effect (PVE), clinical cardiac-gated perfusion images exhibit a phenomenon known as brightening--the myocardium appears to become brighter as the heart wall thickens. Although brightening is an artifact, it serves as an important diagnostic feature for assessment of wall thickening in clinical practice. Our proposed processing algorithm aims to preserve this important diagnostic feature while reducing the noise level in the images. The proposed algorithm is based on the use of a deformable mesh for modeling the cardiac motion in a gated cardiac sequence, based on which the images are processed by smoothing along space-time trajectories of object points while taking into account the PVE. Our experiments demonstrate that the proposed algorithm can yield significantly more-accurate results than several existing methods

Behaviour of a series of reservoirs separated by drowned gates

Science.gov (United States)

Kolechkina, Alla; van Nooijen, Ronald

2017-04-01

Modern control systems tend to be based on computers and therefore to operate by sending commands to structures at given intervals (discrete time control system). Moreover, for almost all water management control systems there are practical lower limits on the time interval between structure adjustments and even between measurements. The water resource systems that are being controlled are physical systems whose state changes continuously. If we combine a continuously changing system and a discrete time controller we get a hybrid system. We use material from recent control theory literature to examine the behaviour of a series of reservoirs separated by drowned gates where the gates are under computer control.

ON the Nature of Ionic Liquid Gating of La2−xSrxCuO4

Directory of Open Access Journals (Sweden)

Hasan Atesci

2018-02-01

Full Text Available Ionic liquids have recently been used as means of modulating the charge carrier properties of cuprates. The mechanism behind it, however, is still a matter of debate. In this paper we report experiments on ionic liquid gated ultrathin La2−xSrxCuO4 films. Our results show that the electrostatic part of gating has limited influence in the conductance of the cuprate in the gate voltage range of 0 to − 2 V. A non-electrostatic mechanism takes over for gate voltages below − 2 V. This mechanism most likely changes the oxygen concentration of the film. The results presented are in line with previous X-ray based studies on ionic liquid gating induced oxygenation of the cuprate materials YBa2Cu3O7−x and La2−xSrxCuO4.

Low band-to-band tunnelling and gate tunnelling current in novel nanoscale double-gate architecture: simulations and investigation

Energy Technology Data Exchange (ETDEWEB)

Datta, Deepanjan [Department of Electrical and Computer Engineering, Purdue University, West Lafayette, IN 47906 (United States); Ganguly, Samiran [Department of Electronics Engineering, Indian School of Mines, Dhanbad-826004 (India); Dasgupta, S [Department of Electronics and Computer Engineering, Indian Institute of Technology, Roorkee-247667 (India)

2007-05-30

Large band-to-band tunnelling (BTBT) and gate leakage current can limit scalability of nanoscale devices. In this paper, we have proposed a novel nanoscale parallel connected heteromaterial double gate (PCHEM-DG) architecture with triple metal gate which significantly suppress BTBT leakage, making it efficient for low power design in the sub-10 nm regime. We have also proposed a triple gate device with p{sup +} poly-n{sup +} poly-p{sup +} poly gate which has substantially low gate leakage over symmetric DG MOSFET. Simulations are performed using a 2D Poisson-Schroedinger simulator and verified with a 2D device simulator ATLAS. We conclude that, due to intrinsic body doping, negligible gate leakage, suppressed BTBT over symmetric DG devices, metal gate (MG) PCHEM-DG MOSFET is efficient for low power circuit design in the nanometre regime.

Processing multiphoton states through operation on a single photon: Methods and applications

International Nuclear Information System (INIS)

Lin Qing; He Bing; Bergou, Janos A.; Ren, Yuhang

2009-01-01

Multiphoton states are widely applied in quantum information technology. By the methods presented in this paper, the structure of a multiphoton state in the form of multiple single-photon qubit products can be mapped to a single-photon qudit, which could also be in a separable product with other photons. This makes possible the manipulation of such multiphoton states by processing single-photon states. The optical realization of unknown qubit discrimination [B. He, J. A. Bergou, and Y.-H. Ren, Phys. Rev. A 76, 032301 (2007)] is simplified with the transformation methods. Another application is the construction of quantum logic gates, where the inverse transformations back to the input state spaces are also necessary. We especially show that the modified setups to implement the transformations can realize the deterministic multicontrol gates (including Toffoli gate) operating directly on the products of single-photon qubits.

Integrated shape and material selection for single and multi-performance criteria

International Nuclear Information System (INIS)

Singh, Jasveer; Mirjalili, Vahid; Pasini, Damiano

2011-01-01

Research highlights: → The method of shape transformers is extended to torsional stiffness and combined load design. → The method is generalized for multi-criteria selection of shape and material. → Performance charts are presented for single and multi-objective selection of cross-section shape and material. → A four quadrant performance chart is presented to visualize the relation between objective function space and design variable space. -- Abstract: A shape and material selection method, based on the concept of shape transformers, has been recently introduced to characterize the mass efficiency of lightweight beams under bending and shear. This paper extends this method to deal with the case of torsional stiffness design, and generalize it to single and multi-crieria selection of lightweight shafts subjected to a combination of bending, shear, and torsional load. The novel feature of the paper is the useful integration of shape and material to model and visualize multi-objective selection problems. The scheme is centered on concept selection in structural design, and hinges on measures that govern the shape properties of a cross-section regardless of its size. These measures, referred as shape transformers, can classify shapes in a way similar to material classification. The procedure is exemplified by considering torsional stiffness as a constraint. The performance charts are developed for single and multi-criteria to visualize in a glance the whole range of cross-sectional shapes for each material. Each design chart is explained with a brief example.

Artificial modulation of the gating behavior of a K+ channel in a KvAP-DNA chimera.

Directory of Open Access Journals (Sweden)

Andrew Wang

Full Text Available We present experiments where the gating behavior of a voltage-gated ion channel is modulated by artificial ligand binding. We construct a channel-DNA chimera with the KvAP potassium channel reconstituted in an artificial membrane. The channel is functional and the single channel ion conductivity unperturbed by the presence of the DNA. However, the channel opening probability vs. bias voltage, i.e., the gating, can be shifted considerably by the electrostatic force between the charges on the DNA and the voltage sensing domain of the protein. Different hybridization states of the chimera DNA thus lead to different response curves of the channel.

Photon-gated spin transistor

OpenAIRE

Li, Fan; Song, Cheng; Cui, Bin; Peng, Jingjing; Gu, Youdi; Wang, Guangyue; Pan, Feng

2017-01-01

Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It would be fundamentally transformative if optical gating was used for spin-FET. We report a new type of spin-polarized field-effect transistor (spin-FET) with optical gating, which is fabricated by partial exposure of the (La,Sr)MnO3 channel to light-emitti...

On photonic controlled phase gates

International Nuclear Information System (INIS)

Kieling, K; Eisert, J; O'Brien, J L

2010-01-01

As primitives for entanglement generation, controlled phase gates have a central role in quantum computing. Especially in ideas realizing instances of quantum computation in linear optical gate arrays, a closer look can be rewarding. In such architectures, all effective nonlinearities are induced by measurements. Hence the probability of success is a crucial parameter of such quantum gates. In this paper, we discuss this question for controlled phase gates that implement an arbitrary phase with one and two control qubits. Within the class of post-selected gates in dual-rail encoding with vacuum ancillas, we identify the optimal success probabilities. We construct networks that allow for implementation using current experimental capabilities in detail. The methods employed here appear specifically useful with the advent of integrated linear optical circuits, providing stable interferometers on monolithic structures.

Single-electron transistors fabricated with sidewall spacer patterning

Science.gov (United States)

Park, Byung-Gook; Kim, Dae Hwan; Kim, Kyung Rok; Song, Ki-Whan; Lee, Jong Duk

2003-09-01

We have implemented a sidewall spacer patterning method for novel dual-gate single-electron transistor (DGSET) and metal-oxide-semiconductor-based SET (MOSET) based on the uniform SOI wire, using conventional lithography and processing technology. A 30 nm wide silicon quantum wire is defined by a sidewall spacer patterning method, and depletion gates for two tunnel junctions of the DGSET are formed by the doped polycrystalline silicon sidewall. The fabricated DGSET and MOSET show clear single-electron tunneling phenomena at liquid nitrogen temperature and insensitivity of the Coulomb oscillation period to gate bias conditions. On the basis of the phase control capability of the sidewall depletion gates, we have proposed a complementary self-biasing method, which enables the SET/CMOS hybrid multi-valued logic (MVL) to operate perfectly well at high temperature, where the peak-to-valley current ratio of Coulomb oscillation severely decreases. The suggested scheme is evaluated by SPICE simulation with an analytical DGSET model, and it is confirmed that even DGSETs with a large Si island can be utilized efficiently in the multi-valued logic.

Single-Atom Gating of Quantum State Superpositions

Energy Technology Data Exchange (ETDEWEB)

Moon, Christopher

2010-04-28

The ultimate miniaturization of electronic devices will likely require local and coherent control of single electronic wavefunctions. Wavefunctions exist within both physical real space and an abstract state space with a simple geometric interpretation: this state space - or Hilbert space - is spanned by mutually orthogonal state vectors corresponding to the quantized degrees of freedom of the real-space system. Measurement of superpositions is akin to accessing the direction of a vector in Hilbert space, determining an angle of rotation equivalent to quantum phase. Here we show that an individual atom inside a designed quantum corral1 can control this angle, producing arbitrary coherent superpositions of spatial quantum states. Using scanning tunnelling microscopy and nanostructures assembled atom-by-atom we demonstrate how single spins and quantum mirages can be harnessed to image the superposition of two electronic states. We also present a straightforward method to determine the atom path enacting phase rotations between any desired state vectors. A single atom thus becomes a real-space handle for an abstract Hilbert space, providing a simple technique for coherent quantum state manipulation at the spatial limit of condensed matter.

Suspended graphene devices with local gate control on an insulating substrate

International Nuclear Information System (INIS)

Ong, Florian R; Cui, Zheng; Vojvodin, Cameron; Papaj, Michał; Deng, Chunqing; Bal, Mustafa; Lupascu, Adrian; Yurtalan, Muhammet A; Orgiazzi, Jean-Luc F X

2015-01-01

We present a fabrication process for graphene-based devices where a graphene monolayer is suspended above a local metallic gate placed in a trench. As an example we detail the fabrication steps of a graphene field-effect transistor. The devices are built on a bare high-resistivity silicon substrate. At temperatures of 77 K and below, we observe the field-effect modulation of the graphene resistivity by a voltage applied to the gate. This fabrication approach enables new experiments involving graphene-based superconducting qubits and nano-electromechanical resonators. The method is applicable to other two-dimensional materials. (paper)

Reversible logic gates on Physarum Polycephalum

International Nuclear Information System (INIS)

Schumann, Andrew

2015-01-01

In this paper, we consider possibilities how to implement asynchronous sequential logic gates and quantum-style reversible logic gates on Physarum polycephalum motions. We show that in asynchronous sequential logic gates we can erase information because of uncertainty in the direction of plasmodium propagation. Therefore quantum-style reversible logic gates are more preferable for designing logic circuits on Physarum polycephalum

Can multi-slice or navigator-gated R2* MRI replace single-slice breath-hold acquisition for hepatic iron quantification?

International Nuclear Information System (INIS)

Loeffler, Ralf B.; McCarville, M.B.; Song, Ruitian; Hillenbrand, Claudia M.; Wagstaff, Anne W.; Smeltzer, Matthew P.; Krafft, Axel J.; Hankins, Jane S.

2017-01-01

Liver R2* values calculated from multi-gradient echo (mGRE) magnetic resonance images (MRI) are strongly correlated with hepatic iron concentration (HIC) as shown in several independently derived biopsy calibration studies. These calibrations were established for axial single-slice breath-hold imaging at the location of the portal vein. Scanning in multi-slice mode makes the exam more efficient, since whole-liver coverage can be achieved with two breath-holds and the optimal slice can be selected afterward. Navigator echoes remove the need for breath-holds and allow use in sedated patients. To evaluate if the existing biopsy calibrations can be applied to multi-slice and navigator-controlled mGRE imaging in children with hepatic iron overload, by testing if there is a bias-free correlation between single-slice R2* and multi-slice or multi-slice navigator controlled R2*. This study included MRI data from 71 patients with transfusional iron overload, who received an MRI exam to estimate HIC using gradient echo sequences. Patient scans contained 2 or 3 of the following imaging methods used for analysis: single-slice images (n = 71), multi-slice images (n = 69) and navigator-controlled images (n = 17). Small and large blood corrected region of interests were selected on axial images of the liver to obtain R2* values for all data sets. Bland-Altman and linear regression analysis were used to compare R2* values from single-slice images to those of multi-slice images and navigator-controlled images. Bland-Altman analysis showed that all imaging method comparisons were strongly associated with each other and had high correlation coefficients (0.98 ≤ r ≤ 1.00) with P-values ≤0.0001. Linear regression yielded slopes that were close to 1. We found that navigator-gated or breath-held multi-slice R2* MRI for HIC determination measures R2* values comparable to the biopsy-validated single-slice, single breath-hold scan. We conclude that these three R2* methods can be

Can multi-slice or navigator-gated R2* MRI replace single-slice breath-hold acquisition for hepatic iron quantification?

Energy Technology Data Exchange (ETDEWEB)

Loeffler, Ralf B.; McCarville, M.B.; Song, Ruitian; Hillenbrand, Claudia M. [St. Jude Children' s Research Hospital, Diagnostic Imaging, Memphis, TN (United States); Wagstaff, Anne W. [St. Jude Children' s Research Hospital, Diagnostic Imaging, Memphis, TN (United States); Rhodes College, Memphis, TN (United States); University of Alabama at Birmingham School of Medicine, Birmingham, AL (United States); Smeltzer, Matthew P. [St. Jude Children' s Research Hospital, Department of Biostatistics, Memphis, TN (United States); University of Memphis, Division of Epidemiology, Biostatistics, and Environmental Health, School of Public Health, Memphis, TN (United States); Krafft, Axel J. [St. Jude Children' s Research Hospital, Diagnostic Imaging, Memphis, TN (United States); University Hospital Center Freiburg, Department of Radiology, Freiburg (Germany); Hankins, Jane S. [St. Jude Children' s Research Hospital, Department of Hematology, Memphis, TN (United States)

2017-01-15

Liver R2* values calculated from multi-gradient echo (mGRE) magnetic resonance images (MRI) are strongly correlated with hepatic iron concentration (HIC) as shown in several independently derived biopsy calibration studies. These calibrations were established for axial single-slice breath-hold imaging at the location of the portal vein. Scanning in multi-slice mode makes the exam more efficient, since whole-liver coverage can be achieved with two breath-holds and the optimal slice can be selected afterward. Navigator echoes remove the need for breath-holds and allow use in sedated patients. To evaluate if the existing biopsy calibrations can be applied to multi-slice and navigator-controlled mGRE imaging in children with hepatic iron overload, by testing if there is a bias-free correlation between single-slice R2* and multi-slice or multi-slice navigator controlled R2*. This study included MRI data from 71 patients with transfusional iron overload, who received an MRI exam to estimate HIC using gradient echo sequences. Patient scans contained 2 or 3 of the following imaging methods used for analysis: single-slice images (n = 71), multi-slice images (n = 69) and navigator-controlled images (n = 17). Small and large blood corrected region of interests were selected on axial images of the liver to obtain R2* values for all data sets. Bland-Altman and linear regression analysis were used to compare R2* values from single-slice images to those of multi-slice images and navigator-controlled images. Bland-Altman analysis showed that all imaging method comparisons were strongly associated with each other and had high correlation coefficients (0.98 ≤ r ≤ 1.00) with P-values ≤0.0001. Linear regression yielded slopes that were close to 1. We found that navigator-gated or breath-held multi-slice R2* MRI for HIC determination measures R2* values comparable to the biopsy-validated single-slice, single breath-hold scan. We conclude that these three R2* methods can be

Life cycle inventory for palm based plywood: A gate-to-gate case study

Science.gov (United States)

Ahmad, Shamim; Sahid, Ismail; Subramaniam, Vijaya; Muhamad, Halimah; Mokhtar, Anis

2013-11-01

The oil palm industry heavily relies on the world market. It is essential to ensure that the oil palm industry is ready to meet the demands and expectation of these overseas customers on the environmental performance of the oil palm industry. Malaysia produces 13.9 million tons of oil palm biomass including oil palm trunk (OPT), frond and empty fruits bunches (EFB) annually. OPT felled in some oil palm plantations during replanting is transported to various industries and one such industry is the plywood factories. In order to gauge the environmental performance of the use of OPT as plywood a Life Cycle Assessment (LCA) study was conducted for palm based plywood. LCA is an important tool to assess the environmental performance of a product or process. Life cycle inventory (LCI) is the heart of a LCA study. This LCI study has a gate-to-gate system boundary and the functional unit is 1 m3 palm plywood produced and covers three types of plywood; Moisture Resistance Plywood (MR), Weather Boiling Proof Plywood Grade 1 (WBP Grade 1) at Factory D and Weather Boiling Proof Plywood Grade 2 (WBP Grade 2) at Factory E. Both factories use two different types of drying processes; conventional drying at Factory D and kiln drying at Factory E. This inventory data was collected from two factories (D and E) representing 40% of Malaysia palm plywood industry. The inputs are mainly the raw materials which are the oil palm trunks and tropical wood veneers and the energy from diesel and electricity from grid which is mainly used for the drying process. The other inputs include water, urea formaldehyde, phenol formaldehyde, flour and melamine powder. The outputs are the biomass waste which consists of oil palm trunk off-cut and emission from boiler. Generally, all types of plywood production use almost same materials and processing methods in different quantities. Due to the different process efficiency, Factory D uses less input of raw materials and energy compared to Factory E.

Cross-section of single-crystal materials used as thermal neutron filters

International Nuclear Information System (INIS)

Adib, M.

2005-01-01

Transmission properties of several single crystal materials important for neutron scattering instrumentation are presented. A computer codes are developed which permit the calculation of thermal diffuse and Bragg-scattering cross-sections of silicon., and sapphire as a function of material's constants, temperature and neutron energy, E, in the range 0.1 MeV .A discussion of the use of their single-crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons is given