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Sample records for single material gate

  1. Materials Fundamentals of Gate Dielectrics

    CERN Document Server

    Demkov, Alexander A

    2006-01-01

    This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discont...

  2. Logic-Gate Functions in Chemomechanical Materials.

    Science.gov (United States)

    Schneider, Hans-Jörg

    2017-09-06

    Chemomechanical polymers that change their shape or volume on stimulation by multiple external chemical signals, particularly on the basis of selective molecular recognition, are discussed. Several examples illustrate how such materials, usually in the form of hydrogels, can be used for the design of chemically triggered valves or artificial muscles and applied, for example, in self-healing materials or drug delivery. The most attractive feature of such materials is that they can combine sensor and actuator within single units, from nano- to macrosize. Simultaneous action of a cofactor allows selective response in the sense of AND logic gates by, for example, amino acids and peptides, which without the presence of a second effector do not induce any changes. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Quantum design rules for single molecule logic gates.

    Science.gov (United States)

    Renaud, N; Hliwa, M; Joachim, C

    2011-08-28

    Recent publications have demonstrated how to implement a NOR logic gate with a single molecule using its interaction with two surface atoms as logical inputs [W. Soe et al., ACS Nano, 2011, 5, 1436]. We demonstrate here how this NOR logic gate belongs to the general family of quantum logic gates where the Boolean truth table results from a full control of the quantum trajectory of the electron transfer process through the molecule by very local and classical inputs practiced on the molecule. A new molecule OR gate is proposed for the logical inputs to be also single metal atoms, one per logical input.

  4. Electrochemical Single-Molecule Transistors with Optimized Gate Coupling

    DEFF Research Database (Denmark)

    Osorio, Henrry M.; Catarelli, Samantha; Cea, Pilar

    2015-01-01

    Electrochemical gating at the single molecule level of viologen molecular bridges in ionic liquids is examined. Contrary to previous data recorded in aqueous electrolytes, a clear and sharp peak in the single molecule conductance versus electrochemical potential data is obtained in ionic liquids....... These data are rationalized in terms of a two-step electrochemical model for charge transport across the redox bridge. In this model the gate coupling in the ionic liquid is found to be fully effective with a modeled gate coupling parameter, ξ, of unity. This compares to a much lower gate coupling parameter...

  5. Analyzing Single-Event Gate Ruptures In Power MOSFET's

    Science.gov (United States)

    Zoutendyk, John A.

    1993-01-01

    Susceptibilities of power metal-oxide/semiconductor field-effect transistors (MOSFET's) to single-event gate ruptures analyzed by exposing devices to beams of energetic bromine ions while applying appropriate bias voltages to source, gate, and drain terminals and measuring current flowing into or out of each terminal.

  6. Deterministic nonlinear phase gates induced by a single qubit

    Science.gov (United States)

    Park, Kimin; Marek, Petr; Filip, Radim

    2018-05-01

    We propose deterministic realizations of nonlinear phase gates by repeating a finite sequence of non-commuting Rabi interactions between a harmonic oscillator and only a single two-level ancillary qubit. We show explicitly that the key nonclassical features of the ideal cubic phase gate and the quartic phase gate are generated in the harmonic oscillator faithfully by our method. We numerically analyzed the performance of our scheme under realistic imperfections of the oscillator and the two-level system. The methodology is extended further to higher-order nonlinear phase gates. This theoretical proposal completes the set of operations required for continuous-variable quantum computation.

  7. Single-atom gating and magnetic interactions in quantum corrals

    Energy Technology Data Exchange (ETDEWEB)

    Ngo, Anh T.; Kim, Eugene H.; Ulloa, Sergio E.

    2017-04-01

    Single-atom gating, achieved by manipulation of adatoms on a surface, has been shown in experiments to allow precise control over superposition of electronic states in quantum corrals. Using a Green's function approach, we demonstrate theoretically that such atom gating can also be used to control the coupling between magnetic degrees of freedom in these systems. Atomic gating enables control not only on the direct interaction between magnetic adatoms, but also over superpositions of many-body states which can then control long distance interactions. We illustrate this effect by considering the competition between direct exchange between magnetic impurities and the Kondo screening mediated by the host electrons, and how this is affected by gating. These results suggest that both magnetic and nonmagnetic single-atom gating may be used to investigate magnetic impurity systems with tailored interactions, and may allow the control of entanglement of different spin states.

  8. Proposal of unilateral single-flux-quantum logic gate

    International Nuclear Information System (INIS)

    Mikaye, H.; Fukaya, N.; Okabe, Y.; Sugamo, T.

    1985-01-01

    A new type of single flux quantum logic gate is proposed, which can perform unilateral propagation of signal without using three-phase clock. This gate is designed to be built with bridge-type Josephson junctions. A basic logic gate consists of two one-junction interferometers coupled by superconducting interconnecting lines, and the logical states are represented by zero or one quantized fluxoid in one of one-junction interferometers. The bias current of the unequal magnitude to each of the two one-junction interferometers results in unilateral signal flow. By adjusting design parameters such as the ratio of the critical current of Josephson junctions and the inductances, circuits with the noise immunity of greater than 50% with respect to the bias current have been designed. Three cascaded gates were modeled and simulated on a computer, and the unilateral signal flow was confirmed. The simulation also shows that a switching delay about 2 picoseconds is feasible

  9. Universal quantum gates for Single Cooper Pair Box based quantum computing

    Science.gov (United States)

    Echternach, P.; Williams, C. P.; Dultz, S. C.; Braunstein, S.; Dowling, J. P.

    2000-01-01

    We describe a method for achieving arbitrary 1-qubit gates and controlled-NOT gates within the context of the Single Cooper Pair Box (SCB) approach to quantum computing. Such gates are sufficient to support universal quantum computation.

  10. Electrochemically-gated single-molecule electrical devices

    International Nuclear Information System (INIS)

    Guo, Shaoyin; Artés, Juan Manuel; Díez-Pérez, Ismael

    2013-01-01

    In the last decade, single-molecule electrical contacts have emerged as a new experimental platform that allows exploring charge transport phenomena in individual molecular blocks. This novel tool has evolved into an essential element within the Molecular Electronics field to understand charge transport processes in hybrid (bio)molecule/electrode interfaces at the nanoscale, and prospect the implementation of active molecular components into functional nanoscale optoelectronic devices. Within this area, three-terminal single-molecule devices have been sought, provided that they are highly desired to achieve full functionality in logic electronic circuits. Despite the latest experimental developments offer consistent methods to bridge a molecule between two electrodes (source and drain in a transistor notation), placing a third electrode (gate) close to the single-molecule electrical contact is still technically challenging. In this vein, electrochemically-gated single-molecule devices have emerged as an experimentally affordable alternative to overcome these technical limitations. In this review, the operating principle of an electrochemically-gated single-molecule device is presented together with the latest experimental methodologies to built them and characterize their charge transport characteristics. Then, an up-to-date comprehensive overview of the most prominent examples will be given, emphasizing on the relationship between the molecular structure and the final device electrical behaviour

  11. High-Fidelity Single-Shot Toffoli Gate via Quantum Control.

    Science.gov (United States)

    Zahedinejad, Ehsan; Ghosh, Joydip; Sanders, Barry C

    2015-05-22

    A single-shot Toffoli, or controlled-controlled-not, gate is desirable for classical and quantum information processing. The Toffoli gate alone is universal for reversible computing and, accompanied by the Hadamard gate, forms a universal gate set for quantum computing. The Toffoli gate is also a key ingredient for (nontopological) quantum error correction. Currently Toffoli gates are achieved by decomposing into sequentially implemented single- and two-qubit gates, which require much longer times and yields lower overall fidelities compared to a single-shot implementation. We develop a quantum-control procedure to construct a single-shot Toffoli gate for three nearest-neighbor-coupled superconducting transmon systems such that the fidelity is 99.9% and is as fast as an entangling two-qubit gate under the same realistic conditions. The gate is achieved by a nongreedy quantum control procedure using our enhanced version of the differential evolution algorithm.

  12. A single nano cantilever as a reprogrammable universal logic gate

    KAUST Repository

    Chappanda, K. N.

    2017-02-24

    The current transistor-based computing circuits use multiple interconnected transistors to realize a single Boolean logic gate. This leads to higher power requirements and delayed computing. Transistors are not suitable for applications in harsh environments and require complicated thermal management systems due to excessive heat dissipation. Also, transistor circuits lack the ability to dynamically reconfigure their functionality in real time, which is desirable for enhanced computing capability. Further, the miniaturization of transistors to improve computational power is reaching its ultimate physical limits. As a step towards overcoming the limitations of transistor-based computing, here we demonstrate a reprogrammable universal Boolean logic gate based on a nanoelectromechanical cantilever (NC) oscillator. The fundamental XOR, AND, NOR, OR and NOT logic gates are condensed in a single NC, thereby reducing electrical interconnects between devices. The device is dynamically switchable between any logic gates at the same drive frequency without the need for any change in the circuit. It is demonstrated to operate at elevated temperatures minimizing the need for thermal management systems. It has a tunable bandwidth of 5 MHz enabling parallel and dynamically reconfigurable logic device for enhanced computing.

  13. A single nano cantilever as a reprogrammable universal logic gate

    International Nuclear Information System (INIS)

    Chappanda, K N; Ilyas, S; Kazmi, S N R; Younis, M I; Holguin-Lerma, J; Batra, N M; Costa, P M F J

    2017-01-01

    The current transistor-based computing circuits use multiple interconnected transistors to realize a single Boolean logic gate. This leads to higher power requirements and delayed computing. Transistors are not suitable for applications in harsh environments and require complicated thermal management systems due to excessive heat dissipation. Also, transistor circuits lack the ability to dynamically reconfigure their functionality in real time, which is desirable for enhanced computing capability. Further, the miniaturization of transistors to improve computational power is reaching its ultimate physical limits. As a step towards overcoming the limitations of transistor-based computing, here we demonstrate a reprogrammable universal Boolean logic gate based on a nanoelectromechanical cantilever (NC) oscillator. The fundamental XOR, AND, NOR, OR and NOT logic gates are condensed in a single NC, thereby reducing electrical interconnects between devices. The device is dynamically switchable between any logic gates at the same drive frequency without the need for any change in the circuit. It is demonstrated to operate at elevated temperatures minimizing the need for thermal management systems. It has a tunable bandwidth of 5 MHz enabling parallel and dynamically reconfigurable logic device for enhanced computing. (paper)

  14. Analytical drain current formulation for gate dielectric engineered dual material gate-gate all around-tunneling field effect transistor

    Science.gov (United States)

    Madan, Jaya; Gupta, R. S.; Chaujar, Rishu

    2015-09-01

    In this work, an analytical drain current model for gate dielectric engineered (hetero dielectric)-dual material gate-gate all around tunnel field effect transistor (HD-DMG-GAA-TFET) has been developed. Parabolic approximation has been used to solve the two-dimensional (2D) Poisson equation with appropriate boundary conditions and continuity equations to evaluate analytical expressions for surface potential, electric field, tunneling barrier width and drain current. Further, the analog performance of the device is studied for three high-k dielectrics (Si3N4, HfO2, and ZrO2), and it has been investigated that the problem of lower ION, can be overcome by using the hetero-gate architecture. Moreover, the impact of scaling the gate oxide thickness and bias variations has also been studied. The HD-DMG-GAA-TFET shows an enhanced ION of the order of 10-4 A. The effectiveness of the proposed model is validated by comparing it with ATLAS device simulations.

  15. Gated single photon emission computer tomography for the detection of silent myocardial ischemia

    International Nuclear Information System (INIS)

    Pena Q, Yamile; Coca P, Marco Antonio; Batista C, Juan Felipe; Fernandez-Britto, Jose; Quesada P, Rodobaldo; Pena C; Andria

    2009-01-01

    Background: Asymptomatic patients with severe coronary atherosclerosis may have a normal resting electrocardiogram and stress test. Aim: To assess the yield of Gated Single Photon Emission Computer Tomography (SPECT) for the screening of silent myocardial ischemia in type 2 diabetic patients. Material and methods: Electrocardiogram, stress test and gated-SPECT were performed on 102 type 2 diabetic patients aged 60 ± 8 years without cardiovascular symptoms. All subjects were also subjected to a coronary angiography, whose results were used as gold standard. Results: Gated-SPECT showed myocardial ischemia on 26.5% of studied patients. The sensibility, specificity, accuracy, positive predictive value and negative predictive value were 92.3%, 96%, 95%, 88.8%, 97.3%, respectively. In four and six patients ischemia was detected on resting electrocardiogram and stress test, respectively. Eighty percent of patients with doubtful resting electrocardiogram results and 70% with a doubtful stress test had a silent myocardial ischemia detected by gated-SPECT. There was a good agreement between the results of gated-SPECT and coronary angiography (k =0.873). Conclusions: Gated-SPECT was an useful tool for the screening of silent myocardial ischemia

  16. A surface-gated InSb quantum well single electron transistor

    International Nuclear Information System (INIS)

    Orr, J M S; Buckle, P D; Fearn, M; Storey, C J; Buckle, L; Ashley, T

    2007-01-01

    Single electron charging effects in a surface-gated InSb/AlInSb QW structure are reported. This material, due to its large g-factor and light effective mass, offers considerable advantages over more commonly used materials, such as GaAs, for quantum information processing devices. However, differences in material and device technology result in significant processing challenges. Simple Coulomb blockade and quantized confinement models are considered to explain the observation of conductance oscillations in these structures. The charging energy (e 2 /C) is found to be comparable with the energy spectrum for single particle states (ΔE)

  17. A Single MEMS Resonator for Reconfigurable Multifunctional Logic Gates

    KAUST Repository

    Tella, Sherif Adekunle

    2018-04-30

    Despite recent efforts toward true electromechanical resonator-based computing, achieving complex logics functions through cascading micro resonators has been deterred by challenges involved in their interconnections and the large required array of resonators. In this work we present a single micro electromechanical resonator with two outputs that enables the realization of multifunctional logic gates as well as other complex logic operations. As examples, we demonstrate the realization of the fundamental 2-bit logic gates of OR, XOR, AND, NOR, and a half adder. The device is based on a compound resonator consisting of a clamped-guided electrostatically actuated arch beam that is attached to another resonant beam from the side, which serves as an additional actuation electrode for the arch. The structure is also provided with an additional electrothermal tuning capability. The logic operations are based on the linear frequency modulations of the arch resonator and side microbeam. The device is compatible with CMOS fabrication process and works at room temperature

  18. A Single MEMS Resonator for Reconfigurable Multifunctional Logic Gates

    KAUST Repository

    Tella, Sherif Adekunle; Alcheikh, Nouha; Younis, Mohammad I.

    2018-01-01

    Despite recent efforts toward true electromechanical resonator-based computing, achieving complex logics functions through cascading micro resonators has been deterred by challenges involved in their interconnections and the large required array of resonators. In this work we present a single micro electromechanical resonator with two outputs that enables the realization of multifunctional logic gates as well as other complex logic operations. As examples, we demonstrate the realization of the fundamental 2-bit logic gates of OR, XOR, AND, NOR, and a half adder. The device is based on a compound resonator consisting of a clamped-guided electrostatically actuated arch beam that is attached to another resonant beam from the side, which serves as an additional actuation electrode for the arch. The structure is also provided with an additional electrothermal tuning capability. The logic operations are based on the linear frequency modulations of the arch resonator and side microbeam. The device is compatible with CMOS fabrication process and works at room temperature

  19. Experimental study of single event burnout and single event gate rupture in power MOSFETs and IGBT

    International Nuclear Information System (INIS)

    Tang Benqi; Wang Yanping; Geng Bin

    2001-01-01

    An experimental study was carried out to determine the single event burnout and single event gate rupture sensitivities in power MOSFETs and IGBT which were exposed to heavy ions from 252 Cf source. The test method, test results, a description of observed burnout current waveforms and a discussion of a possible failure mechanism were presented. Current measurements have been performed with a specially designed circuit. The test results include the observed dependence upon applied drain or gate to source bias and versus with external capacitors and limited resistors

  20. Unimolecular Logic Gate with Classical Input by Single Gold Atoms.

    Science.gov (United States)

    Skidin, Dmitry; Faizy, Omid; Krüger, Justus; Eisenhut, Frank; Jancarik, Andrej; Nguyen, Khanh-Hung; Cuniberti, Gianaurelio; Gourdon, Andre; Moresco, Francesca; Joachim, Christian

    2018-02-27

    By a combination of solution and on-surface chemistry, we synthesized an asymmetric starphene molecule with two long anthracenyl input branches and a short naphthyl output branch on the Au(111) surface. Starting from this molecule, we could demonstrate the working principle of a single molecule NAND logic gate by selectively contacting single gold atoms by atomic manipulation to the longer branches of the molecule. The logical input "1" ("0") is defined by the interaction (noninteraction) of a gold atom with one of the input branches. The output is measured by scanning tunneling spectroscopy following the shift in energy of the electronic tunneling resonances at the end of the short branch of the molecule.

  1. Single-Molecule Electrochemical Gating in Ionic Liquids

    DEFF Research Database (Denmark)

    Kay, Nicola J.; Higgins, Simon J.; Jeppesen, Jan O.

    2012-01-01

    The single-molecular conductance of a redox active molecular bridge has been studied in an electrochemical single-molecule transistor configuration in a room-temperature ionic liquid (RTIL). The redox active pyrrolo-tetrathiafulvalene (pTTF) moiety was attached to gold contacts at both ends through...... −(CH2)6S– groups, and gating of the redox state was achieved with the electrochemical potential. The water-free, room-temperature, ionic liquid environment enabled both the monocationic and the previously inaccessible dicationic redox states of the pTTF moiety to be studied in the in situ scanning...... and decreases again as the second redox process is passed. This is described as an “off–on–off–on–off” conductance switching behavior. This molecular conductance vs electrochemical potential relation could be modeled well as a sequential two-step charge transfer process with full or partial vibrational...

  2. Finger-gate manipulated quantum transport in Dirac materials

    International Nuclear Information System (INIS)

    Kleftogiannis, Ioannis; Cheng, Shun-Jen; Tang, Chi-Shung

    2015-01-01

    We investigate the quantum transport properties of multichannel nanoribbons made of materials described by the Dirac equation, under an in-plane magnetic field. In the low energy regime, positive and negative finger-gate potentials allow the electrons to make intra-subband transitions via hole-like or electron-like quasibound states (QBS), respectively, resulting in dips in the conductance. In the high energy regime, double dip structures in the conductance are found, attributed to spin-flip or spin-nonflip inter-subband transitions through the QBSs. Inverting the finger-gate polarity offers the possibility to manipulate the spin polarized electronic transport to achieve a controlled spin-switch. (paper)

  3. Sliding-gate valve for use with abrasive materials

    Science.gov (United States)

    Ayers, Jr., William J.; Carter, Charles R.; Griffith, Richard A.; Loomis, Richard B.; Notestein, John E.

    1985-01-01

    The invention is a flow and pressure-sealing valve for use with abrasive solids. The valve embodies special features which provide for long, reliable operating lifetimes in solids-handling service. The valve includes upper and lower transversely slidable gates, contained in separate chambers. The upper gate provides a solids-flow control function, whereas the lower gate provides a pressure-sealing function. The lower gate is supported by means for (a) lifting that gate into sealing engagement with its seat when the gate is in its open and closed positions and (b) lowering the gate out of contact with its seat to permit abrasion-free transit of the gate between its open and closed positions. When closed, the upper gate isolates the lower gate from the solids. Because of this shielding action, the sealing surface of the lower gate is not exposed to solids during transit or when it is being lifted or lowered. The chamber containing the lower gate normally is pressurized slightly, and a sweep gas is directed inwardly across the lower-gate sealing surface during the vertical translation of the gate.

  4. Single photon SWAP gate using electromagnetically induced transparency

    International Nuclear Information System (INIS)

    Yavuz, D.D.

    2005-01-01

    We describe a scheme that performs a SWAP gate between two photons at different wavelengths with near 100% fidelity. The essential idea is the preparation of a near-maximal atomic coherence using electromagnetically induced transparency

  5. Efficient controlled-phase gate for single-spin qubits in quantum dots

    NARCIS (Netherlands)

    Meunier, T.; Calado, V.E.; Vandersypen, L.M.K.

    2011-01-01

    Two-qubit interactions are at the heart of quantum information processing. For single-spin qubits in semiconductor quantum dots, the exchange gate has always been considered the natural two-qubit gate. The recent integration of a magnetic field or g-factor gradients in coupled quantum dot systems

  6. Simulation of a quantum NOT gate for a single qutrit system

    Indian Academy of Sciences (India)

    In order to achieve a quantum NOT gate for a single qutrit, the respective Schrödinger equation is solved numerically within a two-photon rotating wave approximation. For small values of one-photon detuning, there appear decoherence effects. Meanwhile, for large values of onephoton detuning, an ideal quantum NOT gate ...

  7. An Updated Perspective of Single Event Gate Rupture and Single Event Burnout in Power MOSFETs

    Science.gov (United States)

    Titus, Jeffrey L.

    2013-06-01

    Studies over the past 25 years have shown that heavy ions can trigger catastrophic failure modes in power MOSFETs [e.g., single-event gate rupture (SEGR) and single-event burnout (SEB)]. In 1996, two papers were published in a special issue of the IEEE Transaction on Nuclear Science [Johnson, Palau, Dachs, Galloway and Schrimpf, “A Review of the Techniques Used for Modeling Single-Event Effects in Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 546-560, April. 1996], [Titus and Wheatley, “Experimental Studies of Single-Event Gate Rupture and Burnout in Vertical Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 533-545, Apr. 1996]. Those two papers continue to provide excellent information and references with regard to SEB and SEGR in vertical planar MOSFETs. This paper provides updated references/information and provides an updated perspective of SEB and SEGR in vertical planar MOSFETs as well as provides references/information to other device types that exhibit SEB and SEGR effects.

  8. Free energy dissipation of the spontaneous gating of a single voltage-gated potassium channel.

    Science.gov (United States)

    Wang, Jia-Zeng; Wang, Rui-Zhen

    2018-02-01

    Potassium channels mainly contribute to the resting potential and re-polarizations, with the potassium electrochemical gradient being maintained by the pump Na + /K + -ATPase. In this paper, we construct a stochastic model mimicking the kinetics of a potassium channel, which integrates temporal evolving of the membrane voltage and the spontaneous gating of the channel. Its stationary probability density functions (PDFs) are found to be singular at the boundaries, which result from the fact that the evolving rates of voltage are greater than the gating rates of the channel. We apply PDFs to calculate the power dissipations of the potassium current, the leakage, and the gating currents. On a physical perspective, the essential role of the system is the K + -battery charging the leakage (L-)battery. A part of power will inevitably be dissipated among the process. So, the efficiency of energy transference is calculated.

  9. Free energy dissipation of the spontaneous gating of a single voltage-gated potassium channel

    Science.gov (United States)

    Wang, Jia-Zeng; Wang, Rui-Zhen

    2018-02-01

    Potassium channels mainly contribute to the resting potential and re-polarizations, with the potassium electrochemical gradient being maintained by the pump Na+/K+-ATPase. In this paper, we construct a stochastic model mimicking the kinetics of a potassium channel, which integrates temporal evolving of the membrane voltage and the spontaneous gating of the channel. Its stationary probability density functions (PDFs) are found to be singular at the boundaries, which result from the fact that the evolving rates of voltage are greater than the gating rates of the channel. We apply PDFs to calculate the power dissipations of the potassium current, the leakage, and the gating currents. On a physical perspective, the essential role of the system is the K+-battery charging the leakage (L-)battery. A part of power will inevitably be dissipated among the process. So, the efficiency of energy transference is calculated.

  10. Dual material gate doping-less tunnel FET with hetero gate dielectric for enhancement of analog/RF performance

    Science.gov (United States)

    Anand, Sunny; Sarin, R. K.

    2017-02-01

    In this paper, charge-plasma-based tunnel FET is proposed by employing dual material gate with hetero gate dielectric technique and it is named hetero-dielectric dual material gate doping-less TFET (HD_DMG_DLTFET). It is compared with conventional doping-less TFET (DLTFET) and dual material gate doping-less TFET (DMG_DLTFET) on the basis of analog and RF performance. The HD_DMG_DLTFET provides better ON state current ({I}\\text{ON}=94 μ \\text{A}/μ \\text{m}), {I}\\text{ON}/{I}\\text{OFF}(≈ 1.36× {10}13), \\text{point} (≈ 3\\text{mV}/\\text{dec}) and average subthreshold slope (\\text{AV}-\\text{SS}=40.40 \\text{mV}/\\text{dec}). The proposed device offers low total gate capacitance (C gg) along with higher drive current. However, with a better transconductance (g m) and cut-off frequency (f T), the HD_DMG_DLTFET can be a good candidate for RF circuitry. The early voltage (V EA) and output conductance (g d) are also moderate for the proposed device with comparison to other devices and therefore can be a candidate for analog devices. From all these simulation results and their study, it is observed that HD_DMG_DLTFET has improved analog/RF performance compared to DLTFET and DMG_DLTFET.

  11. Multi-material gate poly-crystalline thin film transistors: Modeling and simulation for an improved gate transport efficiency

    International Nuclear Information System (INIS)

    Sehgal, Amit; Mangla, Tina; Gupta, Mridula; Gupta, R.S.

    2008-01-01

    In this work, a two-dimensional potential distribution formulation is presented for multi-material gate poly-crystalline silicon thin film transistors. The developed formulation incorporates the effects due to traps and grain-boundaries. In short-channel devices, short-channel effects and drain-induced barrier lowering (DIBL) effect exists, and are accounted for in the analysis. The work aims at the reduction of DIBL effect and grain-boundary effects i.e. to reduce the potential barriers generated in the channel by employing gate-engineered structures. A study of work-functions and electrode lengths of multi-material gate electrode is done to suppress the potential barriers, hot electron effect and to improve the carrier transport efficiency. Green's function approach is adopted for the two-dimensional potential solution. The results obtained show a good agreement with simulated results, thus, demonstrating the validity of our model

  12. Assessment of left ventricular function by electrocardiogram-gated myocardial single photon emission computed tomography using quantitative gated single photon emission computed tomography software

    International Nuclear Information System (INIS)

    Morita, Koichi; Adachi, Itaru; Konno, Masanori

    1999-01-01

    Electrocardiogram (ECG)-gated myocardial single photon emission computed tomography (SPECT) can assess left ventricular (LV) perfusion and function easily using quantitative gated SPECT (QGS) software. ECG-gated SPECT was performed in 44 patients with coronary artery disease under post-stress and resting conditions to assess the values of LV functional parameters, by comparison to LV ejection fraction derived from gated blood pool scan and myocardial characteristics. A good correlation was obtained between ejection fraction using QGS and that using cardiac blood pool scan (r=0.812). Some patients with myocardial ischemia had lower ejection fraction under post-stress compared to resting conditions, indicating post-stress LV dysfunction. LV wall motion and wall thickening were significantly impaired in ischemic and infarcted myocardium, and the degree of abnormality in the infarcted areas was greater than in the ischemia area. LV functional parameters derived using QGS were useful to assess post-stress LV dysfunction and myocardial viability. In conclusion, ECG-gated myocardial SPECT permits simultaneous quantitative assessment of myocardial perfusion and function. (author)

  13. Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

    2017-07-01

    We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

  14. Derivation of uranium residual radioactive material guidelines for the Elza Gate Site

    International Nuclear Information System (INIS)

    Cheng, J.J.; Yu, C.; Devgun, J.S.

    1991-02-01

    Residual radioactive material guidelines for uranium were derived for a large, homogeneously contaminated area at the Elza Gate Site in Oak Ridge, Tennessee. The derivation of the single-nuclide and total uranium guidelines was based on the requirement that the 50-year committed effective dose equivalent to hypothetical individual who lives or works in the immediate vicinity of the Elza Gate Site should not exceed a dose of 100 mrem/yr following decontamination. The DOE residual radioactive guideline computer code RESRAD was used in this evaluation. Four potential scenarios were considered for the site; the scenarios vary with regard to time spent at the site, sources of water used, and sources of food consumed. The results of the evaluation indicate that the basic dose limit of 100 mrem/yr will not be exceeded for uranium within 1000 years, provided that the soil concentration of uranium at the Elza Gate Site does not exceed the following levels: 1800 pCi/g for Scenario A (industrial worker: the expected scenario); 4000 pCi/g for Scenario B (recreationist: a plausible scenario); 470 pCi/g for Scenario C (resident farmer using pond water as the only water source: a possible but unlikely scenario); and 120 pCi/g for Scenario D (resident farmer using well water as the only water source: a possible but unlikely scenario). The uranium guideline applies to the total activity concentration of uranium isotopes in their natural activity concentration ratio of 1:1: 0.046. These guidelines are calculated on the basis of a dose of 100 mrem/yr. In setting the actual uranium guideline for the Elza Gate Site, the DOE will apply the as low as reasonably achievable (ALARA) policy to the decision-making process, along with other factors, such as determining whether a particular scenario is reasonable and appropriate. 10 refs., 3 figs., 7 tabs

  15. A single amino acid gates the KcsA channel

    International Nuclear Information System (INIS)

    Hirano, Minako; Okuno, Daichi; Onishi, Yukiko; Ide, Toru

    2014-01-01

    Highlights: • pH-dependent gating of the KcsA channel is regulated by the CPD. • E146 is the most essential amino acid for pH sensing by the KcsA. • The protonated-mimicking mutant, E146Q, is constitutively open independent of pH. • Minimal rearrangement of the CPD is sufficient for opening of the KcsA. - Abstract: The KcsA channel is a proton-activated potassium channel. We have previously shown that the cytoplasmic domain (CPD) acts as a pH-sensor, and the charged states of certain negatively charged amino acids in the CPD play an important role in regulating the pH-dependent gating. Here, we demonstrate the KcsA channel is constitutively open independent of pH upon mutating E146 to a neutrally charged amino acid. In addition, we found that rearrangement of the CPD following this mutation was not large. Our results indicate that minimal rearrangement of the CPD, particularly around E146, is sufficient for opening of the KcsA channel

  16. A single amino acid gates the KcsA channel

    Energy Technology Data Exchange (ETDEWEB)

    Hirano, Minako, E-mail: hirano37@gpi.ac.jp [Bio Photonics Laboratory, The Graduate School for the Creation of New Photonics Industries, 1955-1 Kurematsu Nishi-ku Hamamatsu, Shizuoka 431-1202 (Japan); Laboratory for Cell Dynamics Observation, Quantitative Biology Center, RIKEN, 6-2-3 Furue-dai Suita, Osaka 565-0874 (Japan); Okuno, Daichi, E-mail: dokuno@riken.jp [Laboratory for Cell Dynamics Observation, Quantitative Biology Center, RIKEN, 6-2-3 Furue-dai Suita, Osaka 565-0874 (Japan); Onishi, Yukiko, E-mail: yonishi@riken.jp [Laboratory for Cell Dynamics Observation, Quantitative Biology Center, RIKEN, 6-2-3 Furue-dai Suita, Osaka 565-0874 (Japan); Ide, Toru, E-mail: ide@okayama-u.ac.jp [Graduate School of Natural Science and Technology, Okayama University, 3-1-1 Tsushima-naka Kita-ku Okayama-shi, Okayama 700-8530 (Japan)

    2014-08-08

    Highlights: • pH-dependent gating of the KcsA channel is regulated by the CPD. • E146 is the most essential amino acid for pH sensing by the KcsA. • The protonated-mimicking mutant, E146Q, is constitutively open independent of pH. • Minimal rearrangement of the CPD is sufficient for opening of the KcsA. - Abstract: The KcsA channel is a proton-activated potassium channel. We have previously shown that the cytoplasmic domain (CPD) acts as a pH-sensor, and the charged states of certain negatively charged amino acids in the CPD play an important role in regulating the pH-dependent gating. Here, we demonstrate the KcsA channel is constitutively open independent of pH upon mutating E146 to a neutrally charged amino acid. In addition, we found that rearrangement of the CPD following this mutation was not large. Our results indicate that minimal rearrangement of the CPD, particularly around E146, is sufficient for opening of the KcsA channel.

  17. Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal—semiconductor field-effect transistor

    Science.gov (United States)

    Zhang, Xian-Jun; Yang, Yin-Tang; Duan, Bao-Xing; Chai, Chang-Chun; Song, Kun; Chen, Bin

    2012-09-01

    Sub-threshold characteristics of the dual material gate 4H-SiC MESFET (DMGFET) are investigated and the analytical models to describe the drain-induced barrier lowering (DIBL) effect are derived by solving one- and two-dimensional Poisson's equations. Using these models, we calculate the bottom potential of the channel and the threshold voltage shift, which characterize the drain-induced barrier lowering (DIBL) effect. The calculated results reveal that the dual material gate (DMG) structure alleviates the deterioration of the threshold voltage and thus suppresses the DIBL effect due to the introduced step function, which originates from the work function difference of the two gate materials when compared with the conventional single material gate metal—semiconductor field-effect transistor (SMGFET).

  18. Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal—semiconductor field-effect transistor

    International Nuclear Information System (INIS)

    Zhang Xian-Jun; Yang Yin-Tang; Duan Bao-Xing; Chai Chang-Chun; Song Kun; Chen Bin

    2012-01-01

    Sub-threshold characteristics of the dual material gate 4H-SiC MESFET (DMGFET) are investigated and the analytical models to describe the drain-induced barrier lowering (DIBL) effect are derived by solving one- and two-dimensional Poisson's equations. Using these models, we calculate the bottom potential of the channel and the threshold voltage shift, which characterize the drain-induced barrier lowering (DIBL) effect. The calculated results reveal that the dual material gate (DMG) structure alleviates the deterioration of the threshold voltage and thus suppresses the DIBL effect due to the introduced step function, which originates from the work function difference of the two gate materials when compared with the conventional single material gate metal—semiconductor field-effect transistor (SMGFET)

  19. Area efficient digital logic NOT gate using single electron box (SEB

    Directory of Open Access Journals (Sweden)

    Bahrepour Davoud

    2017-01-01

    Full Text Available The continuing scaling down of complementary metal oxide semiconductor (CMOS has led researchers to build new devices with nano dimensions, whose behavior will be interpreted based on quantum mechanics. Single-electron devices (SEDs are promising candidates for future VLSI applications, due to their ultra small dimensions and lower power consumption. In most SED based digital logic designs, a single gate is introduced and its performance discussed. While in the SED based circuits the fan out of designed gate circuit should be considered and measured. In the other words, cascaded SED based designs must work properly so that the next stage(s should be driven by the previous stage. In this paper, previously NOT gate based on single electron box (SEB which is an important structure in SED technology, is reviewed in order to obtain correct operation in series connections. The correct operation of the NOT gate is investigated in a buffer circuit which uses two connected NOT gate in series. Then, for achieving better performance the designed buffer circuit is improved by the use of scaling process.

  20. Ultraclean single, double, and triple carbon nanotube quantum dots with recessed Re bottom gates

    Science.gov (United States)

    Jung, Minkyung; Schindele, Jens; Nau, Stefan; Weiss, Markus; Baumgartner, Andreas; Schoenenberger, Christian

    2014-03-01

    Ultraclean carbon nanotubes (CNTs) that are free from disorder provide a promising platform to manipulate single electron or hole spins for quantum information. Here, we demonstrate that ultraclean single, double, and triple quantum dots (QDs) can be formed reliably in a CNT by a straightforward fabrication technique. The QDs are electrostatically defined in the CNT by closely spaced metallic bottom gates deposited in trenches in Silicon dioxide by sputter deposition of Re. The carbon nanotubes are then grown by chemical vapor deposition (CVD) across the trenches and contacted using conventional electron beam lithography. The devices exhibit reproducibly the characteristics of ultraclean QDs behavior even after the subsequent electron beam lithography and chemical processing steps. We demonstrate the high quality using CNT devices with two narrow bottom gates and one global back gate. Tunable by the gate voltages, the device can be operated in four different regimes: i) fully p-type with ballistic transport between the outermost contacts (over a length of 700 nm), ii) clean n-type single QD behavior where a QD can be induced by either the left or the right bottom gate, iii) n-type double QD and iv) triple bipolar QD where the middle QD has opposite doping (p-type). Research at Basel is supported by the NCCR-Nano, NCCR-QIST, ERC project QUEST, and FP7 project SE2ND.

  1. Gated blood pool studies with a single probe - clinical validity

    International Nuclear Information System (INIS)

    Loesel, E.; Hoffmann, G.

    1981-01-01

    The global volume alterations of the heart can be estimated non-invasively by means of the radiocardiographic function analysis developed by Hoffmann and Kleine. Since the failing heart with its functional disturbances demonstrates a pathological volume behaviour under physical exercise, it is possible to use these characteristics to differentiate between the intact heart and the failing heart by registration of the global volume alterations. The gated blood pool technique combined with the registration of the intraventricular pressure pulse by means of a Swan-Ganz flow-directed catheter enables demonstration of ventricular stroke work as a pressure-volume loop (work diagram). Its shape indicates whether the ventricle has to perform mainly pressure work or volume work. Myocardial failure is altering the basic conditions of the heart. The work diagram of the failing heart is significantly different from that of the intact human heart. It is shifted in its pressure-volume coordinates according to an increase of EDV and ESV and the rise of the filling pressure. Case demonstrations reveal the global volume behaviour of the heart under varying conditions: resting and physical exercise, drug influence on the intact and failing heart. (orig.) [de

  2. Heralded linear optical quantum Fredkin gate based on one auxiliary qubit and one single photon detector

    International Nuclear Information System (INIS)

    Zhu Chang-Hua; Cao Xin; Quan Dong-Xiao; Pei Chang-Xing

    2014-01-01

    Linear optical quantum Fredkin gate can be applied to quantum computing and quantum multi-user communication networks. In the existing linear optical scheme, two single photon detectors (SPDs) are used to herald the success of the quantum Fredkin gate while they have no photon count. But analysis results show that for non-perfect SPD, the lower the detector efficiency, the higher the heralded success rate by this scheme is. We propose an improved linear optical quantum Fredkin gate by designing a new heralding scheme with an auxiliary qubit and only one SPD, in which the higher the detection efficiency of the heralding detector, the higher the success rate of the gate is. The new heralding scheme can also work efficiently under a non-ideal single photon source. Based on this quantum Fredkin gate, large-scale quantum switching networks can be built. As an example, a quantum Beneš network is shown in which only one SPD is used. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)

  3. Double gate graphene nanoribbon field effect transistor with single halo pocket in channel region

    Science.gov (United States)

    Naderi, Ali

    2016-01-01

    A new structure for graphene nanoribbon field-effect transistors (GNRFETs) is proposed and investigated using quantum simulation with a nonequilibrium Green's function (NEGF) method. Tunneling leakage current and ambipolar conduction are known effects for MOSFET-like GNRFETs. To minimize these issues a novel structure with a simple change of the GNRFETs by using single halo pocket in the intrinsic channel region, "Single Halo GNRFET (SH-GNRFET)", is proposed. An appropriate halo pocket at source side of channel is used to modify potential distribution of the gate region and weaken band to band tunneling (BTBT). In devices with materials like Si in channel region, doping type of halo and source/drain regions are different. But, here, due to the smaller bandgap of graphene, the mentioned doping types should be the same to reduce BTBT. Simulations have shown that in comparison with conventional GNRFET (C-GNRFET), an SH-GNRFET with appropriately halo doping results in a larger ON current (Ion), smaller OFF current (Ioff), a larger ON-OFF current ratio (Ion/Ioff), superior ambipolar characteristics, a reduced power-delay product and lower delay time.

  4. Universal holonomic single quantum gates over a geometric spin with phase-modulated polarized light.

    Science.gov (United States)

    Ishida, Naoki; Nakamura, Takaaki; Tanaka, Touta; Mishima, Shota; Kano, Hiroki; Kuroiwa, Ryota; Sekiguchi, Yuhei; Kosaka, Hideo

    2018-05-15

    We demonstrate universal non-adiabatic non-abelian holonomic single quantum gates over a geometric electron spin with phase-modulated polarized light and 93% average fidelity. This allows purely geometric rotation around an arbitrary axis by any angle defined by light polarization and phase using a degenerate three-level Λ-type system in a negatively charged nitrogen-vacancy center in diamond. Since the control light is completely resonant to the ancillary excited state, the demonstrated holonomic gate not only is fast with low power, but also is precise without the dynamical phase being subject to control error and environmental noise. It thus allows pulse shaping for further fidelity.

  5. High-κ gate dielectrics: Current status and materials properties considerations

    Science.gov (United States)

    Wilk, G. D.; Wallace, R. M.; Anthony, J. M.

    2001-05-01

    Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.1 μm complementary metal-oxide-semiconductor (CMOS) technology. A systematic consideration of the required properties of gate dielectrics indicates that the key guidelines for selecting an alternative gate dielectric are (a) permittivity, band gap, and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. A review of current work and literature in the area of alternate gate dielectrics is given. Based on reported results and fundamental considerations, the pseudobinary materials systems offer large flexibility and show the most promise toward successful integration into the expected processing conditions for future CMOS technologies, especially due to their tendency to form at interfaces with Si (e.g. silicates). These pseudobinary systems also thereby enable the use of other high-κ materials by serving as an interfacial high-κ layer. While work is ongoing, much research is still required, as it is clear that any material which is to replace SiO2 as the gate dielectric faces a formidable challenge. The requirements for process integration compatibility are remarkably demanding, and any serious candidates will emerge only through continued, intensive investigation.

  6. NEPP Update of Independent Single Event Upset Field Programmable Gate Array Testing

    Science.gov (United States)

    Berg, Melanie; Label, Kenneth; Campola, Michael; Pellish, Jonathan

    2017-01-01

    This presentation provides a NASA Electronic Parts and Packaging (NEPP) Program update of independent Single Event Upset (SEU) Field Programmable Gate Array (FPGA) testing including FPGA test guidelines, Microsemi RTG4 heavy-ion results, Xilinx Kintex-UltraScale heavy-ion results, Xilinx UltraScale+ single event effect (SEE) test plans, development of a new methodology for characterizing SEU system response, and NEPP involvement with FPGA security and trust.

  7. A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate MOSFETs

    International Nuclear Information System (INIS)

    Li Cong; Zhuang Yi-Qi; Zhang Li; Jin Gang

    2014-01-01

    A two-dimensional analytical subthreshold behavior model for junctionless dual-material cylindrical surrounding-gate (JLDMCSG) metal-oxide-semiconductor field-effect transistors (MOSFETs) is proposed. It is derived by solving the two-dimensional Poisson's equation in two continuous cylindrical regions with any simplifying assumption. Using this analytical model, the subthreshold characteristics of JLDMCSG MOSFETs are investigated in terms of channel electrostatic potential, horizontal electric field, and subthreshold current. Compared to junctionless single-material cylindrical surrounding-gate MOSFETs, JLDMCSG MOSFETs can effectively suppress short-channel effects and simultaneously improve carrier transport efficiency. It is found that the subthreshold current of JLDMCSG MOSFETs can be significantly reduced by adopting both a thin oxide and thin silicon channel. The accuracy of the analytical model is verified by its good agreement with the three-dimensional numerical simulator ISE TCAD

  8. The Microwave Noise Behaviour Of Dual Material Gate Silicon On Insulator

    Science.gov (United States)

    Jafar, N.; Soin, N.

    2009-06-01

    This work presents the noise behaviour due to the applied Dual Material Gate (DMG) on the 75 nm n-channel Silicon On Insulator (SOI) device operating in the fully depletion mode, particularly for microwave circuit design. Influences of DMG properties namely the gate length ratio (L1:L2) and gate material workfunction difference (ΔΦM) as well as structural and operational parameters which are silicon thickness (TSi) and threshold voltage (VTH) setting variation on the noise performance were carried out on simulation basis using ATLAS 2D. Results show better noise performance in DMG as compare to the standard gate structure of FD-SOI devices. Higher VTH for DMG design is recommended for minimized noise figure in line with the advantage of inverse VTH roll-off characteristics for short channel effects suppression.

  9. Single-Atom Gating of Quantum State Superpositions

    Energy Technology Data Exchange (ETDEWEB)

    Moon, Christopher

    2010-04-28

    The ultimate miniaturization of electronic devices will likely require local and coherent control of single electronic wavefunctions. Wavefunctions exist within both physical real space and an abstract state space with a simple geometric interpretation: this state space - or Hilbert space - is spanned by mutually orthogonal state vectors corresponding to the quantized degrees of freedom of the real-space system. Measurement of superpositions is akin to accessing the direction of a vector in Hilbert space, determining an angle of rotation equivalent to quantum phase. Here we show that an individual atom inside a designed quantum corral1 can control this angle, producing arbitrary coherent superpositions of spatial quantum states. Using scanning tunnelling microscopy and nanostructures assembled atom-by-atom we demonstrate how single spins and quantum mirages can be harnessed to image the superposition of two electronic states. We also present a straightforward method to determine the atom path enacting phase rotations between any desired state vectors. A single atom thus becomes a real-space handle for an abstract Hilbert space, providing a simple technique for coherent quantum state manipulation at the spatial limit of condensed matter.

  10. High-Dimensional Single-Photon Quantum Gates: Concepts and Experiments.

    Science.gov (United States)

    Babazadeh, Amin; Erhard, Manuel; Wang, Feiran; Malik, Mehul; Nouroozi, Rahman; Krenn, Mario; Zeilinger, Anton

    2017-11-03

    Transformations on quantum states form a basic building block of every quantum information system. From photonic polarization to two-level atoms, complete sets of quantum gates for a variety of qubit systems are well known. For multilevel quantum systems beyond qubits, the situation is more challenging. The orbital angular momentum modes of photons comprise one such high-dimensional system for which generation and measurement techniques are well studied. However, arbitrary transformations for such quantum states are not known. Here we experimentally demonstrate a four-dimensional generalization of the Pauli X gate and all of its integer powers on single photons carrying orbital angular momentum. Together with the well-known Z gate, this forms the first complete set of high-dimensional quantum gates implemented experimentally. The concept of the X gate is based on independent access to quantum states with different parities and can thus be generalized to other photonic degrees of freedom and potentially also to other quantum systems.

  11. GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications

    Energy Technology Data Exchange (ETDEWEB)

    None

    2011-07-31

    This report summarizes the accomplishments of the UAB GATE Center of Excellence in Lightweight Materials for Automotive Applications. The first Phase of the UAB DOE GATE center spanned the period 2005-2011. The UAB GATE goals coordinated with the overall goals of DOE's FreedomCAR and Vehicles Technologies initiative and DOE GATE program. The FCVT goals are: (1) Development and validation of advanced materials and manufacturing technologies to significantly reduce automotive vehicle body and chassis weight without compromising other attributes such as safety, performance, recyclability, and cost; (2) To provide a new generation of engineers and scientists with knowledge and skills in advanced automotive technologies. The UAB GATE focused on both the FCVT and GATE goals in the following manner: (1) Train and produce graduates in lightweight automotive materials technologies; (2) Structure the engineering curricula to produce specialists in the automotive area; (3) Leverage automotive related industry in the State of Alabama; (4) Expose minority students to advanced technologies early in their career; (5) Develop innovative virtual classroom capabilities tied to real manufacturing operations; and (6) Integrate synergistic, multi-departmental activities to produce new product and manufacturing technologies for more damage tolerant, cost-effective, and lighter automotive structures.

  12. Entangling quantum-logic gate operated with an ultrabright semiconductor single-photon source.

    Science.gov (United States)

    Gazzano, O; Almeida, M P; Nowak, A K; Portalupi, S L; Lemaître, A; Sagnes, I; White, A G; Senellart, P

    2013-06-21

    We demonstrate the unambiguous entangling operation of a photonic quantum-logic gate driven by an ultrabright solid-state single-photon source. Indistinguishable single photons emitted by a single semiconductor quantum dot in a micropillar optical cavity are used as target and control qubits. For a source brightness of 0.56 photons per pulse, the measured truth table has an overlap with the ideal case of 68.4±0.5%, increasing to 73.0±1.6% for a source brightness of 0.17 photons per pulse. The gate is entangling: At a source brightness of 0.48, the Bell-state fidelity is above the entangling threshold of 50% and reaches 71.0±3.6% for a source brightness of 0.15.

  13. Note: Time-gated 3D single quantum dot tracking with simultaneous spinning disk imaging

    International Nuclear Information System (INIS)

    DeVore, M. S.; Stich, D. G.; Keller, A. M.; Phipps, M. E.; Hollingsworth, J. A.; Goodwin, P. M.; Werner, J. H.; Cleyrat, C.; Lidke, D. S.; Wilson, B. S.

    2015-01-01

    We describe recent upgrades to a 3D tracking microscope to include simultaneous Nipkow spinning disk imaging and time-gated single-particle tracking (SPT). Simultaneous 3D molecular tracking and spinning disk imaging enable the visualization of cellular structures and proteins around a given fluorescently labeled target molecule. The addition of photon time-gating to the SPT hardware improves signal to noise by discriminating against Raman scattering and short-lived fluorescence. In contrast to camera-based SPT, single-photon arrival times are recorded, enabling time-resolved spectroscopy (e.g., measurement of fluorescence lifetimes and photon correlations) to be performed during single molecule/particle tracking experiments

  14. Note: Time-gated 3D single quantum dot tracking with simultaneous spinning disk imaging

    Energy Technology Data Exchange (ETDEWEB)

    DeVore, M. S.; Stich, D. G.; Keller, A. M.; Phipps, M. E.; Hollingsworth, J. A.; Goodwin, P. M.; Werner, J. H., E-mail: jwerner@lanl.gov [Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Mail Stop G755, Los Alamos, New Mexico 87545 (United States); Cleyrat, C.; Lidke, D. S.; Wilson, B. S. [Department of Pathology and Cancer Research and Treatment Center, University of New Mexico, Albuquerque, New Mexico 87131 (United States)

    2015-12-15

    We describe recent upgrades to a 3D tracking microscope to include simultaneous Nipkow spinning disk imaging and time-gated single-particle tracking (SPT). Simultaneous 3D molecular tracking and spinning disk imaging enable the visualization of cellular structures and proteins around a given fluorescently labeled target molecule. The addition of photon time-gating to the SPT hardware improves signal to noise by discriminating against Raman scattering and short-lived fluorescence. In contrast to camera-based SPT, single-photon arrival times are recorded, enabling time-resolved spectroscopy (e.g., measurement of fluorescence lifetimes and photon correlations) to be performed during single molecule/particle tracking experiments.

  15. An electrically reconfigurable logic gate intrinsically enabled by spin-orbit materials.

    Science.gov (United States)

    Kazemi, Mohammad

    2017-11-10

    The spin degree of freedom in magnetic devices has been discussed widely for computing, since it could significantly reduce energy dissipation, might enable beyond Von Neumann computing, and could have applications in quantum computing. For spin-based computing to become widespread, however, energy efficient logic gates comprising as few devices as possible are required. Considerable recent progress has been reported in this area. However, proposals for spin-based logic either require ancillary charge-based devices and circuits in each individual gate or adopt principals underlying charge-based computing by employing ancillary spin-based devices, which largely negates possible advantages. Here, we show that spin-orbit materials possess an intrinsic basis for the execution of logic operations. We present a spin-orbit logic gate that performs a universal logic operation utilizing the minimum possible number of devices, that is, the essential devices required for representing the logic operands. Also, whereas the previous proposals for spin-based logic require extra devices in each individual gate to provide reconfigurability, the proposed gate is 'electrically' reconfigurable at run-time simply by setting the amplitude of the clock pulse applied to the gate. We demonstrate, analytically and numerically with experimentally benchmarked models, that the gate performs logic operations and simultaneously stores the result, realizing the 'stateful' spin-based logic scalable to ultralow energy dissipation.

  16. Universal quantum gates on electron-spin qubits with quantum dots inside single-side optical microcavities.

    Science.gov (United States)

    Wei, Hai-Rui; Deng, Fu-Guo

    2014-01-13

    We present some compact quantum circuits for a deterministic quantum computing on electron-spin qubits assisted by quantum dots inside single-side optical microcavities, including the CNOT, Toffoli, and Fredkin gates. They are constructed by exploiting the giant optical Faraday rotation induced by a single-electron spin in a quantum dot inside a single-side optical microcavity as a result of cavity quantum electrodynamics. Our universal quantum gates have some advantages. First, all the gates are accomplished with a success probability of 100% in principle. Second, our schemes require no additional electron-spin qubits and they are achieved by some input-output processes of a single photon. Third, our circuits for these gates are simple and economic. Moreover, our devices for these gates work in both the weak coupling and the strong coupling regimes, and they are feasible in experiment.

  17. Control of electrochemical signals from quantum dots conjugated to organic materials by using DNA structure in an analog logic gate.

    Science.gov (United States)

    Chen, Qi; Yoo, Si-Youl; Chung, Yong-Ho; Lee, Ji-Young; Min, Junhong; Choi, Jeong-Woo

    2016-10-01

    Various bio-logic gates have been studied intensively to overcome the rigidity of single-function silicon-based logic devices arising from combinations of various gates. Here, a simple control tool using electrochemical signals from quantum dots (QDs) was constructed using DNA and organic materials for multiple logic functions. The electrochemical redox current generated from QDs was controlled by the DNA structure. DNA structure, in turn, was dependent on the components (organic materials) and the input signal (pH). Independent electrochemical signals from two different logic units containing QDs were merged into a single analog-type logic gate, which was controlled by two inputs. We applied this electrochemical biodevice to a simple logic system and achieved various logic functions from the controlled pH input sets. This could be further improved by choosing QDs, ionic conditions, or DNA sequences. This research provides a feasible method for fabricating an artificial intelligence system. Copyright © 2016 Elsevier B.V. All rights reserved.

  18. Design and optimization analysis of dual material gate on DG-IMOS

    Science.gov (United States)

    Singh, Sarabdeep; Raman, Ashish; Kumar, Naveen

    2017-12-01

    An impact ionization MOSFET (IMOS) is evolved for overcoming the constraint of less than 60 mV/decade sub-threshold slope (SS) of conventional MOSFET at room temperature. In this work, first, the device performance of the p-type double gate impact ionization MOSFET (DG-IMOS) is optimized by adjusting the device design parameters. The adjusted parameters are ratio of gate and intrinsic length, gate dielectric thickness and gate work function. Secondly, the DMG (dual material gate) DG-IMOS is proposed and investigated. This DMG DG-IMOS is further optimized to obtain the best possible performance parameters. Simulation results reveal that DMG DG-IMOS when compared to DG-IMOS, shows better I ON, I ON/I OFF ratio, and RF parameters. Results show that by properly tuning the lengths of two materials at a ratio of 1.5 in DMG DG-IMOS, optimized performance is achieved including I ON/I OFF ratio of 2.87 × 109 A/μm with I ON as 11.87 × 10-4 A/μm and transconductance of 1.06 × 10-3 S/μm. It is analyzed that length of drain side material should be greater than the length of source side material to attain the higher transconductance in DMG DG-IMOS.

  19. Memory effect in silicon time-gated single-photon avalanche diodes

    International Nuclear Information System (INIS)

    Dalla Mora, A.; Contini, D.; Di Sieno, L.; Tosi, A.; Boso, G.; Villa, F.; Pifferi, A.

    2015-01-01

    We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons

  20. Memory effect in silicon time-gated single-photon avalanche diodes

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Mora, A.; Contini, D., E-mail: davide.contini@polimi.it; Di Sieno, L. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Tosi, A.; Boso, G.; Villa, F. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Pifferi, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); CNR, Istituto di Fotonica e Nanotecnologie, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

    2015-03-21

    We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

  1. Property of electrocardiogram gated single photon emission tomography by 99mTc-methoxy isobutyl isonitrile

    International Nuclear Information System (INIS)

    Imai, Kamon; Nishio, Yukari; Araki, Yasushi; Saito, Satoshi; Ozawa, Yukio; Yasugi, Tadao; Hagiwara, Kazuo; Kamata, Rikisaburo

    1992-01-01

    99m Tc-methoxy isobutyl isonitrile (MIBI) is a new developed myocardial perfusion imaging agent. Because this compound has higher photon energy than thallium (Tl), electrocardiogram gated single photon emission tomography (SPECT): end-diastolic (ED) and end-systolic (ES) short axis (SA) images could be taken. To investigate property of gated MIBI SPECT, MIBI myocardial scintigraphy, Tl scintigraphy (TMS) and analysis of left ventricular wall motion were performed in 6 patients with myocardial infarction. Left ventricule was divided into 8 segments. Perfusion defect (PD) was scored: '0' (normal), '1' (hypo-perfusion), '2' (defect). Wall motion abnormality (WMA) was also scored: '0' (normo-kinesis), '1' (hypo-kinesis), '2' (a-, dys-kinesis). Severity and extent of PD and WMA were calculated. Severity of WMA was 3.0±2.0 (M±SD), severity of PD was 3.3±1.7 in TMS, 3.7±1.3 in no-gated MIBI, 5.0±0.6 in ES-MIBI, 7.3±2.0 in ED-MIBI. Extent of WMA was 2.3±1.0. Extent of PD was 2.5±1.3 in TMS, 3.0±1.6 in no-gated MIBI, 3.5±0.8 in ES-MIBI, 4.8±1.0 in ED-MIBI. Compared with wall motion abnormality, severity and extent of PD in ED-MIBI was larger. From our data, it is concluded that perfusion defect in ED-MIBI was overestimated significantly. When we evaluate gated MIBI image, we must consider this property. (author)

  2. Memory effect in gated single-photon avalanche diodes: a limiting noise contribution similar to afterpulsing

    Science.gov (United States)

    Contini, D.; Dalla Mora, A.; Di Sieno, L.; Cubeddu, R.; Tosi, A.; Boso, G.; Pifferi, A.

    2013-03-01

    In recent years, emerging applications, such as diffuse optical imaging and spectroscopy (e.g., functional brain imaging and optical mammography), in which a wide dynamic range is crucial, have turned the interest towards Single-Photon Avalanche Diode (SPAD). In these fields, the use of a fast-gated SPAD has proven to be a successful technique to increase the measurement sensitivity of different orders of magnitude. However, an unknown background noise has been observed at high illumination during the gate-OFF time, thus setting a limit to the maximum increase of the dynamic range. In this paper we describe this noise in thin-junction silicon single-photon avalanche diode when a large amount of photons reaches the gated detector during the OFF time preceding the enabling time. This memory effect increases the background noise with respect to primary dark count rate similarly to a classical afterpulsing process, but differently it is not related to a previous avalanche ignition in the detector. We discovered that memory effect increases linearly with the power of light impinging on the detector and it has an exponential trend with time constants far different from those of afterpulsing and independently of the bias voltage applied to the junction. For these reasons, the memory effect is not due to the same trapping states of afterpulsing and must be described as a different process.

  3. Single OR molecule and OR atomic circuit logic gates interconnected on a Si(100)H surface

    International Nuclear Information System (INIS)

    Ample, F; Joachim, C; Duchemin, I; Hliwa, M

    2011-01-01

    Electron transport calculations were carried out for three terminal OR logic gates constructed either with a single molecule or with a surface dangling bond circuit interconnected on a Si(100)H surface. The corresponding multi-electrode multi-channel scattering matrix (where the central three terminal junction OR gate is the scattering center) was calculated, taking into account the electronic structure of the supporting Si(100)H surface, the metallic interconnection nano-pads, the surface atomic wires and the molecule. Well interconnected, an optimized OR molecule can only run at a maximum of 10 nA output current intensity for a 0.5 V bias voltage. For the same voltage and with no molecule in the circuit, the output current of an OR surface atomic scale circuit can reach 4 μA.

  4. Manipulating molecular quantum states with classical metal atom inputs: demonstration of a single molecule NOR logic gate.

    Science.gov (United States)

    Soe, We-Hyo; Manzano, Carlos; Renaud, Nicolas; de Mendoza, Paula; De Sarkar, Abir; Ample, Francisco; Hliwa, Mohamed; Echavarren, Antonio M; Chandrasekhar, Natarajan; Joachim, Christian

    2011-02-22

    Quantum states of a trinaphthylene molecule were manipulated by putting its naphthyl branches in contact with single Au atoms. One Au atom carries 1-bit of classical information input that is converted into quantum information throughout the molecule. The Au-trinaphthylene electronic interactions give rise to measurable energy shifts of the molecular electronic states demonstrating a NOR logic gate functionality. The NOR truth table of the single molecule logic gate was characterized by means of scanning tunnelling spectroscopy.

  5. Gated single-photon emission tomography imaging protocol to evaluate myocardial stunning after exercise

    International Nuclear Information System (INIS)

    Hashimoto, Jun; Kubo, Atsushi; Iwasaki, Ryuichiro; Iwanaga, Shiro; Mitamura, Hideo; Ogawa, Satoshi; Kosuda, Shigeru

    1999-01-01

    This study was designed to apply ECG-gating to stress myocardial perfusion single-photon emission tomography (SPET) for the evaluation of myocardial stunning after exercise. Technetium-99m sestamibi was selected as the perfusion agent and a rest/exercise 1-day protocol was employed. Fourteen patients without coronary stenosis and 33 patients with coronary stenosis were enrolled in the study. We carried out three data acquisitions with ECG-gating: a 15-min data acquisition starting 30 min after the rest injection (AC1), a 5-min acquisition starting 5 min after the stress injection (AC2) and a 15-min acquisition starting 20 min after the stress injection (AC3). Calculation of left ventricular ejection fraction (LVEF) values was performed by means of automatic determination of the endocardial surface for all gating intervals in the cardiac cycle. Measured global EF values in 14 patients without coronary stenosis were 52.3%±7.6% (AC1), 60.6%±8.9% (AC2) and 55.6%±5.6% (AC3), and those in 11 patients with severe ischaemia were 53.6%±8.0% (AC1), 45.6%±12.1% (AC2) and 49.7%±10.7%. The magnitude of the depression of post-stress LVEF relative to the rest LVEF correlated with the severity of ischaemia (r=0.594, P=0.002), and segments manifesting post-stress functional depression were associated with ischaemic segments showing reversible perfusion defects. Stress myocardial perfusion SPET with ECG-gating is a feasible method for the evaluation of myocardial stunning as well as exercise-induced ischaemia. (orig.)

  6. Electrical manipulation of spin states in a single electrostatically gated transition-metal complex

    DEFF Research Database (Denmark)

    Osorio, Edgar A; Moth-Poulsen, Kasper; van der Zant, Herre S J

    2010-01-01

    -field on the Mn-atom. Adding a single electron thus stabilizes the low-spin configuration and the corresponding sequential tunnelling current is suppressed by spin-blockade. From low-temperature inelastic cotunneling spectroscopy, we infer the magnetic excitation spectrum of the molecule and uncover also...... a strongly gate-dependent singlet-triplet splitting on the low-spin side. The measured bias-spectroscopy is shown to be consistent with an exact diagonalization of the Mn-complex, and an interpretation of the data is given in terms of a simplified effective model....

  7. Strained Silicon Single Nanowire Gate-All-Around TFETs with Optimized Tunneling Junctions

    Directory of Open Access Journals (Sweden)

    Keyvan Narimani

    2018-04-01

    Full Text Available In this work, we demonstrate a strained Si single nanowire tunnel field effect transistor (TFET with gate-all-around (GAA structure yielding Ion-current of 15 μA/μm at the supply voltage of Vdd = 0.5V with linear onset at low drain voltages. The subthreshold swing (SS at room temperature shows an average of 76 mV/dec over 4 orders of drain current Id from 5 × 10−6 to 5 × 10−2 µA/µm Optimized devices also show excellent current saturation, an important feature for analog performance.

  8. Single-flux-quantum logic circuits exploiting collision-based fusion gates

    International Nuclear Information System (INIS)

    Asai, T.; Yamada, K.; Amemiya, Y.

    2008-01-01

    We propose a single-flux-quantum (SFQ) logic circuit based on the fusion computing systems--collision-based and reaction-diffusion fusion computers. A fusion computing system consists of regularly arrayed unit cells (fusion gates), where each unit has two input arms and two output arms and is connected to its neighboring cells with the arms. We designed functional SFQ circuits that implemented the fusion computation. The unit cell was able to be made with ten Josephson junctions. Circuit simulation with standard Nb/Al-AlOx/Nb 2.5-kA/cm 2 process parameters showed that the SFQ fusion computing systems could operate at 10 GHz clock

  9. A single high dose of escitalopram disrupts sensory gating and habituation, but not sensorimotor gating in healthy volunteers

    DEFF Research Database (Denmark)

    Oranje, Bob; Wienberg, Malene; Glenthøj, Birte Yding

    2011-01-01

    Early mechanisms to limit the input of sensory information to higher brain areas are important for a healthy individual. In previous studies, we found that a low dose of 10mg escitalopram (SSRI) disrupts habituation, without affecting sensory and sensorimotor gating in healthy volunteers. In the ......Early mechanisms to limit the input of sensory information to higher brain areas are important for a healthy individual. In previous studies, we found that a low dose of 10mg escitalopram (SSRI) disrupts habituation, without affecting sensory and sensorimotor gating in healthy volunteers....... In the current study a higher dose of 15mg was used. The hypothesis was that this higher dose of escitalopram would not only disrupt habituation, but also sensory and sensorimotor gating. Twenty healthy male volunteers received either placebo or 15mg escitalopram, after which they were tested in a P50...... suppression, and a habituation and prepulse inhibition (PPI) of the startle reflex paradigm. Escitalopram significantly decreased P50 suppression and habituation, but had no effect on PPI. The results indicate that habituation and sensory gating are disrupted by increased serotonergic activity, while...

  10. A novel hetero-material gate-underlap electrically doped TFET for improving DC/RF and ambipolar behaviour

    Science.gov (United States)

    Yadav, Shivendra; Sharma, Dheeraj; Chandan, Bandi Venkata; Aslam, Mohd; Soni, Deepak; Sharma, Neeraj

    2018-05-01

    In this article, the impact of gate-underlap with hetero material (low band gap) has been investigated in terms of DC and Analog/RF parameters by proposed device named as hetero material gate-underlap electrically doped TFET (HM-GUL-ED-TFET). Gate-underlap resolves the problem of ambipolarity, gate leakage current (Ig) and slightly improves the gate to drain capacitance, but DC performance is almost unaffected. Further, the use of low band gap material (Si0.5 Ge) in proposed device causes a drastic improvement in the DC as well as RF figures of merit. We have investigated the Si0.5 Ge as a suitable candidate among different low band gap materials. In addition, the sensitivity of gate-underlap in terms of gate to drain inversion and parasitic capacitances has been studied for HM-GUL-ED-TFET. Further, relatively it is observed that gate-underlap is a better way than drain-underlap in the proposed structure to improve Analog/RF performances without degrading the DC parameters of device. Additionally, hetero-junction alignment analysis has been done for fabrication feasibility.

  11. A novel Tunneling Graphene Nano Ribbon Field Effect Transistor with dual material gate: Numerical studies

    Science.gov (United States)

    Ghoreishi, Seyed Saleh; Saghafi, Kamyar; Yousefi, Reza; Moravvej-farshi, Mohammad Kazem

    2016-09-01

    In this work, we present Dual Material Gate Tunneling Graphene Nano-Ribbon Field Effect Transistors (DMG-T-GNRFET) mainly to suppress the am-bipolar current with assumption that sub-threshold swing which is one of the important characteristics of tunneling transistors must not be degraded. In the proposed structure, dual material gates with different work functions are used. Our investigations are based on numerical simulations which self-consistently solves the 2D Poisson based on an atomistic mode-space approach and Schrodinger equations, within the Non-Equilibrium Green's (NEGF). The proposed device shows lower off-current and on-off ratio becomes 5order of magnitude greater than the conventional device. Also two different short channel effects: Drain Induced Barrier Shortening (DIBS) and hot-electron effect are improved in the proposed device compare to the main structure.

  12. Dopant induced single electron tunneling within the sub-bands of single silicon NW tri-gate junctionless n-MOSFET

    Science.gov (United States)

    Uddin, Wasi; Georgiev, Yordan M.; Maity, Sarmistha; Das, Samaresh

    2017-09-01

    We report 1D electron transport of silicon junctionless tri-gate n-type transistor at 4.2 K. The step like curve observed in the current voltage characteristic suggests 1D transport. Besides the current steps for 1D transport, we found multiple spikes within individual steps, which we relate to inter-band single electron tunneling, mediated by the charged dopants available in the channel region. Clear Coulomb diamonds were observed in the stability diagram of the device. It is shown that a uniformly doped silicon nanowire can provide us the window for the single electron tunnelling. Back-gate versus front-gate color plot, where current is in a color scale, shows a crossover of the increased conduction region. This is a clear indication of the dopant-dopant interaction. It has been shown that back-gate biasing can be used to tune the coupling strength between the dopants.

  13. Three-input gate logic circuits on chemically assembled single-electron transistors with organic and inorganic hybrid passivation layers.

    Science.gov (United States)

    Majima, Yutaka; Hackenberger, Guillaume; Azuma, Yasuo; Kano, Shinya; Matsuzaki, Kosuke; Susaki, Tomofumi; Sakamoto, Masanori; Teranishi, Toshiharu

    2017-01-01

    Single-electron transistors (SETs) are sub-10-nm scale electronic devices based on conductive Coulomb islands sandwiched between double-barrier tunneling barriers. Chemically assembled SETs with alkanethiol-protected Au nanoparticles show highly stable Coulomb diamonds and two-input logic operations. The combination of bottom-up and top-down processes used to form the passivation layer is vital for realizing multi-gate chemically assembled SET circuits, as this combination enables us to connect conventional complementary metal oxide semiconductor (CMOS) technologies via planar processes. Here, three-input gate exclusive-OR (XOR) logic operations are demonstrated in passivated chemically assembled SETs. The passivation layer is a hybrid bilayer of self-assembled monolayers (SAMs) and pulsed laser deposited (PLD) aluminum oxide (AlO[Formula: see text]), and top-gate electrodes were prepared on the hybrid passivation layers. Top and two-side-gated SETs showed clear Coulomb oscillation and diamonds for each of the three available gates, and three-input gate XOR logic operation was clearly demonstrated. These results show the potential of chemically assembled SETs to work as logic devices with multi-gate inputs using organic and inorganic hybrid passivation layers.

  14. Performance assessment of gate material engineered AlInN/GaN underlap DG MOSFET for enhanced carrier transport efficiency

    Science.gov (United States)

    Pardeshi, Hemant M.; Raj, Godwin; Pati, Sudhansu; Mohankumar, N.; Sarkar, Chandan Kumar

    2013-08-01

    In the work proposed, performance of dual material gate (DMG) AlInN/GaN underlap DG MOSFET has been analyzed and compared with the corresponding performance of single material gate (SMG) AlInN/GaN underlap DG MOSFET using Sentaurus TCAD device simulation. A systematic, quantitative investigation of key device metrics for DMG-DG device is presented and a comparison with SMG-DG device is done for a wide range of gate and underlap lengths. The key idea in this paper is to demonstrate the improved performance exhibited by DMG-DG device over SMG-DG device, due to enhanced carrier transport efficiency and suppressed short channel effect (SCE). Simulation reveals an improvement in drain current, drain induced barrier lowering (DIBL), Ion/Ioff, Delay and Energy Delay Product (EDP) for DMG-DG MOSFET as compared to SMG-DG MOSFET. Very high drain current of 6.7 mA/μm, low DIBL of 1.62 mV/V, high Ion/Ioff ratio of 4.044e107, low delay of 0.001 ps and low EDP of 1.37e-31 J s/μm are obtained for DGM-DG device. However, subthreshold slope (SS) for DMG-DG device is on higher side than SMG-DG. The proposed AlInN/GaN Heterostructure Underlap DGM-DG MOSFET shows excellent promise as one of the candidates to substitute present MOSFET for future high speed applications.

  15. 2-D modeling and analysis of short-channel behavior of a front high- K gate stack triple-material gate SB SON MOSFET

    Science.gov (United States)

    Banerjee, Pritha; Kumari, Tripty; Sarkar, Subir Kumar

    2018-02-01

    This paper presents the 2-D analytical modeling of a front high- K gate stack triple-material gate Schottky Barrier Silicon-On-Nothing MOSFET. Using the two-dimensional Poisson's equation and considering the popular parabolic potential approximation, expression for surface potential as well as the electric field has been considered. In addition, the response of the proposed device towards aggressive downscaling, that is, its extent of immunity towards the different short-channel effects, has also been considered in this work. The analytical results obtained have been validated using the simulated results obtained using ATLAS, a two-dimensional device simulator from SILVACO.

  16. Genotyping of single nucleotide polymorphism by probe-gated silica nanoparticles.

    Science.gov (United States)

    Ercan, Meltem; Ozalp, Veli C; Tuna, Bilge G

    2017-11-15

    The development of simple, reliable, and rapid approaches for molecular detection of common mutations is important for prevention and early diagnosis of genetic diseases, including Thalessemia. Oligonucleotide-gated mesoporous nanoparticles-based analysis is a new platform for mutation detection that has the advantages of sensitivity, rapidity, accuracy, and convenience. A specific mutation in β-thalassemia, one of the most prevalent inherited diseases in several countries, was used as model disease in this study. An assay for detection of IVS110 point mutation (A > G reversion) was developed by designing probe-gated mesoporous silica nanoparticles (MCM-41) loaded with reporter fluorescein molecules. The silica nanoparticles were characterized by AFM, TEM and BET analysis for having 180 nm diameter and 2.83 nm pore size regular hexagonal shape. Amine group functionalized nanoparticles were analysed with FTIR technique. Mutated and normal sequence probe oligonucleotides)about 12.7 nmol per mg nanoparticles) were used to entrap reporter fluorescein molecules inside the pores and hybridization with single stranded DNA targets amplified by PCR gave different fluorescent signals for mutated targets. Samples from IVS110 mutated and normal patients resulted in statistically significant differences when the assay procedure were applied. Copyright © 2017 Elsevier Inc. All rights reserved.

  17. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    International Nuclear Information System (INIS)

    Lin, Y. H.; Chou, J. C.

    2015-01-01

    We investigated amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFT_s) using different high-Κ gate dielectric materials such as silicon nitride (Si_3N_4) and aluminum oxide (Al_2O_3) at low temperature process (<300 degree) and compared them with low temperature silicon dioxide (SiO_2). The IGZO device with high-Κ gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, post annealing treatment is an essential process for completing the process. The chemical reaction of the high-κ/IGZO interface due to heat formation in high-Κ/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-Κ gate dielectric materials and explained the interface effect by charge band diagram.

  18. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

    OpenAIRE

    Lin, Yu-Hsien; Chou, Jay-Chi

    2014-01-01

    This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using hafnium oxide (HfO2) gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chem...

  19. Modeling and analysis of surface potential of single gate fully depleted SOI MOSFET using 2D-Poisson's equation

    Science.gov (United States)

    Mani, Prashant; Tyagi, Chandra Shekhar; Srivastav, Nishant

    2016-03-01

    In this paper the analytical solution of the 2D Poisson's equation for single gate Fully Depleted SOI (FDSOI) MOSFET's is derived by using a Green's function solution technique. The surface potential is calculated and the threshold voltage of the device is minimized for the low power consumption. Due to minimization of threshold voltage the short channel effect of device is suppressed and after observation we obtain the device is kink free. The structure and characteristics of SingleGate FDSOI MOSFET were matched by using MathCAD and silvaco respectively.

  20. Crosstalk error correction through dynamical decoupling of single-qubit gates in capacitively coupled singlet-triplet semiconductor spin qubits

    Science.gov (United States)

    Buterakos, Donovan; Throckmorton, Robert E.; Das Sarma, S.

    2018-01-01

    In addition to magnetic field and electric charge noise adversely affecting spin-qubit operations, performing single-qubit gates on one of multiple coupled singlet-triplet qubits presents a new challenge: crosstalk, which is inevitable (and must be minimized) in any multiqubit quantum computing architecture. We develop a set of dynamically corrected pulse sequences that are designed to cancel the effects of both types of noise (i.e., field and charge) as well as crosstalk to leading order, and provide parameters for these corrected sequences for all 24 of the single-qubit Clifford gates. We then provide an estimate of the error as a function of the noise and capacitive coupling to compare the fidelity of our corrected gates to their uncorrected versions. Dynamical error correction protocols presented in this work are important for the next generation of singlet-triplet qubit devices where coupling among many qubits will become relevant.

  1. Detailed simulation study of a dual material gate carbon nanotube field-effect transistor

    Science.gov (United States)

    Orouji, Ali A.; Arefinia, Zahra

    2009-02-01

    For the first time, a new type of carbon nanotube field-effect transistor (CNTFET), the dual material gate (DMG)-CNTFET, is proposed and simulated using quantum simulation that is based on self-consistent solution between two-dimensional Poisson equation and Schrödinger equation with open boundary conditions, within the nonequilibrium Green's function (NEGF) framework. The proposed structure is similar to that of the conventional coaxial CNTFET with the exception that the gate of the DMG-CNTFET consists of two laterally contacting metals with different work functions. Simulation results show DMG-CNTFET significantly decreases leakage current, drain conductance and subthreshold swing, and increases on-off current ratio and voltage gain as compared to conventional CNTFET. We demonstrate that the potential in the channel region exhibits a step function that ensures the screening of the drain potential variation by the gate near the drain resulting in suppressed short-channel effects like the drain-induced barrier lowering (DIBL) and hot-carrier effect.

  2. Influence of Respiratory Gating, Image Filtering, and Animal Positioning on High-Resolution Electrocardiography-Gated Murine Cardiac Single-Photon Emission Computed Tomography

    Directory of Open Access Journals (Sweden)

    Chao Wu

    2015-01-01

    Full Text Available Cardiac parameters obtained from single-photon emission computed tomographic (SPECT images can be affected by respiratory motion, image filtering, and animal positioning. We investigated the influence of these factors on ultra-high-resolution murine myocardial perfusion SPECT. Five mice were injected with 99m technetium (99mTc-tetrofosmin, and each was scanned in supine and prone positions in a U-SPECT-II scanner with respiratory and electrocardiographic (ECG gating. ECG-gated SPECT images were created without applying respiratory motion correction or with two different respiratory motion correction strategies. The images were filtered with a range of three-dimensional gaussian kernels, after which end-diastolic volumes (EDVs, end-systolic volumes (ESVs, and left ventricular ejection fractions were calculated. No significant differences in the measured cardiac parameters were detected when any strategy to reduce or correct for respiratory motion was applied, whereas big differences (> 5% in EDV and ESV were found with regard to different positioning of animals. A linear relationship (p < .001 was found between the EDV or ESV and the kernel size of the gaussian filter. In short, respiratory gating did not significantly affect the cardiac parameters of mice obtained with ultra-high-resolution SPECT, whereas the position of the animals and the image filters should be the same in a comparative study with multiple scans to avoid systematic differences in measured cardiac parameters.

  3. Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach

    Science.gov (United States)

    Lauenstein, Jean-Marie

    2011-01-01

    Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR

  4. Performance of Thallium-201 Electrocardiography-gated Myocardial Perfusion Single Photon Emission Computed Tomography to Assess Left Ventricular Function

    Directory of Open Access Journals (Sweden)

    Guang-Uei Hung

    2005-05-01

    Full Text Available This study evaluated the performance of gated single photon emission computed tomography (SPECT with thallium-201 (201Tl in assessing left ventricular ejection fraction (LVEF, end-diastolic volume (EDV, and end-systolic volume (ESV in Taiwanese by determining repeatability and correlation with two-dimensional (2D echocardiography. A total of 18 patients underwent two sequential gated SPECT acquisitions within 30 minutes in the resting state to assess repeatability. Another 28 patients who underwent gated SPECT and 2D echocardiography within 7 days were included for comparison. The two sequential measurements were well correlated with respect to LVEF, EDV, and ESV (r = 0.97, 0.95, and 0.97, respectively, all p < 0.0001. Bland-Altman analysis revealed that two standard deviations of the absolute difference between the two sequential measurements for LVEF, EDV, and ESV were 6.4%, 16.8 mL, and 8.6 mL, respectively. For LVEF, EDV, and ESV, correlations between redistribution 201Tl-gated SPECT and echocardiography were also excellent (all r = 0.83, p < 0.0001. LVEF was similar with 201Tl-gated SPECT and echocardiography, but EDV and ESV were significantly higher with echocardiography (p < 0.05. Our study revealed that 201Tl-gated SPECT has high repeatability and excellent correlation with echocardiography for the assessment of LVEF and volumes in Taiwanese. These results support the clinical application of gated SPECT in routine 201Tl myocardial perfusion imaging in Taiwanese.

  5. Optimal strategy for a single-qubit gate and the trade-off between opposite types of decoherence

    International Nuclear Information System (INIS)

    Alicki, Robert; Horodecki, Michal; Horodecki, Ryszard; Horodecki, Pawel; Jacak, Lucjan; Machnikowski, Pawel

    2004-01-01

    We study reliable quantum-information processing (QIP) under two different types of environment. The first type is Markovian exponential decay, and the appropriate elementary strategy of protection of qubit is to apply fast gates. The second one is strongly non-Markovian and occurs solely during operations on the qubit. The best strategy is then to work with slow gates. If the two types are both present, one has to optimize the speed of gate. We show that such a trade-off is present for a single-qubit operation in a semiconductor quantum dot implementation of QIP, where recombination of exciton (qubit) is Markovian, while phonon dressing gives rise to the non-Markovian contribution

  6. Two-dimensional analytical model for dual-material control-gate tunnel FETs

    Science.gov (United States)

    Xu, Hui Fang; Dai, Yue Hua; Gui Guan, Bang; Zhang, Yong Feng

    2016-09-01

    An analytical model for a dual-material control-gate (DMCG) tunnel field effect transistor (TFET) is presented for the first time in this paper, and the influence of the mobile charges on the potential profile is taken into account. On the basis of the potential profile, the lateral electric field is derived and the expression for the drain current is obtained by integrating the band-to-band tunneling (BTBT) generation rate applicable to low-bandgap and high-bandgap materials over the tunneling region. The model also predicts the impacts of the control-gate work function on the potential and drain current. The advantage of this work is that it not only offers physical insight into device physics but also provides the basic designing guideline for DMCG TFETs, enabling the designer to optimize the device in terms of the on-state current, the on-off current ratio, and suppressed ambipolar behavior. Very good agreements for both the potential and drain current are observed between the model calculations and the simulated results.

  7. Assessment of left ventricular function using 201Tl electrocardiogram-gated myocardial single photon emission computed tomography

    International Nuclear Information System (INIS)

    Nishikubo, Naotsugu; Tamai, Hiroyuki

    2013-01-01

    Advances in computed tomography (CT) technology make it possible to obtain left ventricular wall motion using 3D reconstruction. In this study, we compared the images obtained from CT and 201 Tl electrocardiogram (ECG) gated single photon emission computed tomography (SPECT). In 20 patients with ischemic heart disease, we performed 201 Tl ECG gated SPECT (GE Healthcare Millennium VG) and ECG gated CT (Philips Medical Systems Brilliance iCT) to evaluate of left ventricular wall motion during the resting phase. In SPECT, left ventricular images were reconstructed using quantitative gated SPECT (QGS) software. In CT, the images were reconstructed using Virtual Place (AZE Software). The left ventricle was classified into five regions (anterior, lateral, inferior, septal, and apical). The amplitude of the wall motion was classified into five grades according to AHA classification. The values of the wall motion were separately checked by two radiographers. Assessment of left ventricular function myocardial wall movement using the three-dimensional movie display with ECG gated myocardial SPECT data was in agreement with the evaluation by cardiac CT inspection, and corresponded with wall motion in 88 of all 100 segments. SPECT analysis has the same quantity as that of obtained from CT for evaluation of left ventricular wall motion. (author)

  8. Analytical modeling and simulation of subthreshold behavior in nanoscale dual material gate AlGaN/GaN HEMT

    Science.gov (United States)

    Kumar, Sona P.; Agrawal, Anju; Chaujar, Rishu; Gupta, Mridula; Gupta, R. S.

    2008-07-01

    A two-dimensional (2-D) analytical model for a Dual Material Gate (DMG) AlGaN/GaN High Electron Mobility Transistor (HEMT) has been developed to demonstrate the unique attributes of this device structure in suppressing short channel effects (SCEs). The model accurately predicts the channel potential, electric field variation along the channel, and sub-threshold drain current, taking into account the effect of lengths of the two gate metals, their work functions, barrier layer thicknesses, and applied drain biases. It is seen that the SCEs and hot carrier effects in DMG AlGaN/GaN HEMT are suppressed due to the work function difference of the two metal gates, thereby screening the drain potential variations by the gate near the drain. Besides, a more uniform electric field along the channel leads to improved carrier transport efficiency. The accuracy of the results obtained from our analytical model has been verified using ATLAS device simulations.

  9. Single event upset susceptibilities of latchup immune CMOS process programmable gate arrays

    Science.gov (United States)

    Koga, R.; Crain, W. R.; Crawford, K. B.; Hansel, S. J.; Lau, D. D.; Tsubota, T. K.

    Single event upsets (SEU) and latchup susceptibilities of complementary metal oxide semiconductor programmable gate arrays (CMOS PPGA's) were measured at the Lawrence Berkeley Laboratory 88-in. cyclotron facility with Xe (603 MeV), Cu (290 MeV), and Ar (180 MeV) ion beams. The PPGA devices tested were those which may be used in space. Most of the SEU measurements were taken with a newly constructed tester called the Bus Access Storage and Comparison System (BASACS) operating via a Macintosh II computer. When BASACS finds that an output does not match a prerecorded pattern, the state of all outputs, position in the test cycle, and other necessary information is transmitted and stored in the Macintosh. The upset rate was kept between 1 and 3 per second. After a sufficient number of errors are stored, the test is stopped and the total fluence of particles and total errors are recorded. The device power supply current was closely monitored to check for occurrence of latchup. Results of the tests are presented, indicating that some of the PPGA's are good candidates for selected space applications.

  10. Stagnation, circulation, and erosion of granular materials through belt conveyor sluice gate

    Science.gov (United States)

    Pohlman, Nicholas; Moralda, Michael; Dunne, Ryan

    2013-11-01

    Control of flow rates in conversion reactors for discrete materials like biomass can be achieved in belt conveyors through a combination of belt speed, hopper size, and aperture opening. As material is extracted from the bottom of the storage hopper, other material cannot achieve plug flow and therefore is restricted from exiting through a sluice-gate type opening. The excess material moves vertically from the opening causing a pile up and recirculation back along the free surface of the hopper. Experimental results obtained through high speed imaging show the position of the stagnation point as well as the rate of circulation is dependent on the mass flow rate achieved and instantaneous fill level. The movement of material into the plug flow along the belt allows verification of deposition models on erodible beds rather than rigid surfaces with artificial roughness of glued particles. Similarly, the pile-up at the exit influences the efficiency of the transport affecting the narrow energy return on investment of biomass resources. The laboratory-scale behavior can therefore be translated into industrial performance metrics for increased operational efficiency. This work is supported by the NSF REU Site Operation E-Tank under award number 1156789.

  11. Conducting single-molecule magnet materials.

    Science.gov (United States)

    Cosquer, Goulven; Shen, Yongbing; Almeida, Manuel; Yamashita, Masahiro

    2018-05-11

    Multifunctional molecular materials exhibiting electrical conductivity and single-molecule magnet (SMM) behaviour are particularly attractive for electronic devices and related applications owing to the interaction between electronic conduction and magnetization of unimolecular units. The preparation of such materials remains a challenge that has been pursued by a bi-component approach of combination of SMM cationic (or anionic) units with conducting networks made of partially oxidized (or reduced) donor (or acceptor) molecules. The present status of the research concerning the preparation of molecular materials exhibiting SMM behaviour and electrical conductivity is reviewed, describing the few molecular compounds where both SMM properties and electrical conductivity have been observed. The evolution of this research field through the years is discussed. The first reported compounds are semiconductors in spite being able to present relatively high electrical conductivity, and the SMM behaviour is observed at low temperatures where the electrical conductivity of the materials is similar to that of an insulator. During the recent years, a breakthrough has been achieved with the coexistence of high electrical conductivity and SMM behaviour in a molecular compound at the same temperature range, but so far without evidence of a synergy between these properties. The combination of high electrical conductivity with SMM behaviour requires not only SMM units but also the regular and as far as possible uniform packing of partially oxidized molecules, which are able to provide a conducting network.

  12. Minority Carrier Tunneling and Stress-Induced Leakage Current for p+ gate MOS Capacitors with Poly-Si and PolySi0.7Ge0.3 Gate Material

    NARCIS (Netherlands)

    Houtsma, V.E.; Holleman, J.; Salm, Cora; de Haan, I.R.; Schmitz, Jurriaan; Widdershoven, F.P.; Widdershoven, F.P.; Woerlee, P.H.

    1999-01-01

    In this paper the I-V conduction mechanism for gate injection (-V g), Stress-Induced Leakage Current (SILC) characteristics and time-to-breakdown (tbd) of PMOS capacitors with p+-poly-Si and poly-SiGe gate material on 5.6, 4.8 and 3.1 nm oxide thickness are studied. A model based on Minority Carrier

  13. Report on the studies on the corrosion behaviour of the constructional materials for the gate cooling system

    International Nuclear Information System (INIS)

    Elayathu, N.S.D.; Balachandra, J.

    1974-01-01

    The gate cooling system of the Trombay R-5 reactor, now under construction, is proposed to be a laminated gate designed to operate with 50 % KBO 2 solution within the temperature limits 30 deg C and 50 deg C. With a view to find suitable constructional materials for the gate, the corrosion behaviour of stainless steel 304 L(ASTM 240-69), lead (ASTM B-29), aluminium (as Boral), neoprene, perspex and carbon steel (ASTM A 302 grade B) has been investigated in 50 % KBO 2 solution at 45 deg C. After definite periods of exposure, their coupons were examined metallographically at different magnifications to assess the nature and extent of sub-surface attack. The results show that out of the materials studied, carbon steel, lead and aluminium are more liable to corrosion in the borate solution and hence their use should be avoided. (M.G.B.)

  14. Analytical threshold voltage modeling of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs

    Science.gov (United States)

    Goel, Ekta; Singh, Balraj; Kumar, Sanjay; Singh, Kunal; Jit, Satyabrata

    2017-04-01

    Two dimensional threshold voltage model of ion-implanted strained-Si double-material double-gate MOSFETs has been done based on the solution of two dimensional Poisson's equation in the channel region using the parabolic approximation method. Novelty of the proposed device structure lies in the amalgamation of the advantages of both the strained-Si channel and double-material double-gate structure with a vertical Gaussian-like doping profile. The effects of different device parameters (such as device channel length, gate length ratios, germanium mole fraction) and doping parameters (such as projected range, straggle parameter) on threshold voltage of the proposed structure have been investigated. It is observed that the subthreshold performance of the device can be improved by simply controlling the doping parameters while maintaining other device parameters constant. The modeling results show a good agreement with the numerical simulation data obtained by using ATLAS™, a 2D device simulator from SILVACO.

  15. Performance and Design Considerations of a Novel Dual-Material Gate Carbon Nanotube Field-Effect Transistors: Nonequilibrium Green's Function Approach

    Science.gov (United States)

    Arefinia, Zahra; Orouji, Ali A.

    2009-02-01

    The concept of dual-material gate (DMG) is applied to the carbon nanotube field-effect transistor (CNTFET) with doped source and drain extensions, and the features exhibited by the resulting new structure, i.e., the DMG-CNTFET structure, have been examined for the first time by developing a two-dimensional (2D) full quantum simulation. The simulations have been done by the self-consistent solution of 2D Poisson-Schrödinger equations, within the nonequilibrium Green's function (NEGF) formalism. The results show DMG-CNTFET decreases significantly leakage current and drain conductance and increases on-off current ratio and voltage gain as compared to the single material gate counterparts CNTFET. It is seen that short channel effects in this structure are suppressed because of the perceivable step in the surface potential profile, which screens the drain potential. Moreover, these unique features can be controlled by engineering the workfunction and length of the gate metals. Therefore, this work provides an incentive for further experimental exploration.

  16. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2014-01-01

    Full Text Available This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using hafnium oxide (HfO2 gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs. However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2 dielectric thin film during high-temperature annealing. In this study, the annealing temperature was optimized at 200°C for a HfO2 gate dielectric TFT exhibiting high mobility, a high ION/IOFF ratio, low IOFF current, and excellent subthreshold swing (SS.

  17. Determination of single-kidney glomerular filtration rate (GFR) with CT urography versus renal dynamic imaging Gates method

    Energy Technology Data Exchange (ETDEWEB)

    You, Shan [Hebei North University, Department of Graduate, Zhangjiakou City, Hebei Province (China); Ma, XianWu; Zhang, ChangZhu; Li, Qiang [Qiqihar Chinese Medicine Hospital, Department of Radiology, Qigihar City, Heilongjiang Province (China); Shi, WenWei; Zhang, Jing; Yuan, XiaoDong [The 309th Hospital of Chinese People' s Liberation Army, Department of Radiology, Beijing (China)

    2018-03-15

    To present a single-kidney CT-GFR measurement and compare it with the renal dynamic imaging Gates-GFR. Thirty-six patients with hydronephrosis referred for CT urography and 99mTc-DTPA renal dynamic imaging were prospectively included. Informed consent was obtained from all patients. The CT urography protocol included non-contrast, nephrographic, and excretory phase imaging. The total CT-GFR was calculated by dividing the CT number increments of the total urinary system between the nephrographic and excretory phase by the products of iodine concentration in the aorta and the elapsed time, then multiplied by (1- Haematocrit). The total CT-GFR was then split into single-kidney CT-GFR by a left and right kidney proportionality factor. The results were compared with single-kidney Gates-GFR by using paired t-test, correlation analysis, and Bland-Altman plots. Paired difference between single-kidney CT-GFR (45.02 ± 13.91) and single-kidney Gates-GFR (51.21 ± 14.76) was 6.19 ± 5.63 ml/min, p<0.001, demonstrating 12.1% systematic underestimation with ±11.03 ml/min (±21.5%) measurement deviation. A good correlation was revealed between both measurements (r=0.87, p<0.001). The proposed single-kidney CT-GFR correlates and agrees well with the reference standard despite a systematic underestimation, therefore it could be a one-stop-shop for evaluating urinary tract morphology and split renal function. (orig.)

  18. Determination of single-kidney glomerular filtration rate (GFR) with CT urography versus renal dynamic imaging Gates method

    International Nuclear Information System (INIS)

    You, Shan; Ma, XianWu; Zhang, ChangZhu; Li, Qiang; Shi, WenWei; Zhang, Jing; Yuan, XiaoDong

    2018-01-01

    To present a single-kidney CT-GFR measurement and compare it with the renal dynamic imaging Gates-GFR. Thirty-six patients with hydronephrosis referred for CT urography and 99mTc-DTPA renal dynamic imaging were prospectively included. Informed consent was obtained from all patients. The CT urography protocol included non-contrast, nephrographic, and excretory phase imaging. The total CT-GFR was calculated by dividing the CT number increments of the total urinary system between the nephrographic and excretory phase by the products of iodine concentration in the aorta and the elapsed time, then multiplied by (1- Haematocrit). The total CT-GFR was then split into single-kidney CT-GFR by a left and right kidney proportionality factor. The results were compared with single-kidney Gates-GFR by using paired t-test, correlation analysis, and Bland-Altman plots. Paired difference between single-kidney CT-GFR (45.02 ± 13.91) and single-kidney Gates-GFR (51.21 ± 14.76) was 6.19 ± 5.63 ml/min, p<0.001, demonstrating 12.1% systematic underestimation with ±11.03 ml/min (±21.5%) measurement deviation. A good correlation was revealed between both measurements (r=0.87, p<0.001). The proposed single-kidney CT-GFR correlates and agrees well with the reference standard despite a systematic underestimation, therefore it could be a one-stop-shop for evaluating urinary tract morphology and split renal function. (orig.)

  19. Robustness of high-fidelity Rydberg gates with single-site addressability

    Science.gov (United States)

    Goerz, Michael H.; Halperin, Eli J.; Aytac, Jon M.; Koch, Christiane P.; Whaley, K. Birgitta

    2014-09-01

    Controlled-phase (cphase) gates can be realized with trapped neutral atoms by making use of the Rydberg blockade. Achieving the ultrahigh fidelities required for quantum computation with such Rydberg gates, however, is compromised by experimental inaccuracies in pulse amplitudes and timings, as well as by stray fields that cause fluctuations of the Rydberg levels. We report here a comparative study of analytic and numerical pulse sequences for the Rydberg cphase gate that specifically examines the robustness of the gate fidelity with respect to such experimental perturbations. Analytical pulse sequences of both simultaneous and stimulated Raman adiabatic passage (STIRAP) are found to be at best moderately robust under these perturbations. In contrast, optimal control theory is seen to allow generation of numerical pulses that are inherently robust within a predefined tolerance window. The resulting numerical pulse shapes display simple modulation patterns and can be rationalized in terms of an interference between distinct two-photon Rydberg excitation pathways. Pulses of such low complexity should be experimentally feasible, allowing gate fidelities of order 99.90-99.99% to be achievable under realistic experimental conditions.

  20. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  1. Design and implementation of an efficient single layer five input majority voter gate in quantum-dot cellular automata.

    Science.gov (United States)

    Bahar, Ali Newaz; Waheed, Sajjad

    2016-01-01

    The fundamental logical element of a quantum-dot cellular automata (QCA) circuit is majority voter gate (MV). The efficiency of a QCA circuit is depends on the efficiency of the MV. This paper presents an efficient single layer five-input majority voter gate (MV5). The structure of proposed MV5 is very simple and easy to implement in any logical circuit. This proposed MV5 reduce number of cells and use conventional QCA cells. However, using MV5 a multilayer 1-bit full-adder (FA) is designed. The functional accuracy of the proposed MV5 and FA are confirmed by QCADesigner a well-known QCA layout design and verification tools. Furthermore, the power dissipation of proposed circuits are estimated, which shows that those circuits dissipate extremely small amount of energy and suitable for reversible computing. The simulation outcomes demonstrate the superiority of the proposed circuit.

  2. Nonenhanced ECG-gated quiescent-interval single-shot MRA (QISS-MRA) of the lower extremities: Comparison with contrast-enhanced MRA

    Energy Technology Data Exchange (ETDEWEB)

    Klasen, J. [Department of Diagnostic and Interventional Radiology, University of Duesseldorf, Medical Faculty, Duesseldorf (Germany); Blondin, D., E-mail: blondin@med.uni-duesseldorf.de [Department of Diagnostic and Interventional Radiology, University of Duesseldorf, Medical Faculty, Duesseldorf (Germany); Schmitt, P. [Siemens AG, Healthcare Sector, Erlangen (Germany); Bi, X. [Siemens Healthcare, Chicago, IL (United States); Sansone, R. [Department of Cardiology, University of Duesseldorf, Medical Faculty, Duesseldorf (Germany); Wittsack, H.-J.; Kroepil, P.; Quentin, M.; Kuhlemann, J.; Miese, F. [Department of Diagnostic and Interventional Radiology, University of Duesseldorf, Medical Faculty, Duesseldorf (Germany); Heiss, C.; Kelm, M. [Department of Cardiology, University of Duesseldorf, Medical Faculty, Duesseldorf (Germany); Antoch, G.; Lanzman, R.S. [Department of Diagnostic and Interventional Radiology, University of Duesseldorf, Medical Faculty, Duesseldorf (Germany)

    2012-05-15

    Aim: To evaluate electrocardiogram (ECG)-gated quiescent-interval single-shot magnetic resonance angiography (QISS-MRA) for nonenhanced assessment of peripheral artery occlusive disease (PAOD) using contrast-enhanced MRA (CE-MRA) as the reference standard. Materials and methods: Twenty-seven patients (mean age 66.6 {+-} 10.8 years) with PAOD were included in the study. QISS-MRA and CE-MRA of the lower extremity were performed using a 1.5 T MR scanner. In each patient, subjective image quality and the degree of stenosis were evaluated on a four-point scale for 15 predefined arterial segments. Results: Twenty-five of the 27 patients were considered for analysis. Subjective image quality of QISS-MRA was significantly lower for the distal aorta, pelvic arteries, and femoral arteries as compared to CE-MRA (p < 0.01), while no significant difference was found for other vascular segments. The degree of stenosis was overestimated with QISS-MRA in 23 of 365 (6.3%) segments and underestimated in two of 365 (0.5%) segments. As compared to CE-MRA, QISS-MRA had a high sensitivity (98.6%), specificity (96%) as well as positive and negative predictive value (88.7 and 99.6%, respectively) for the detection of significant stenosis ({>=}50%). Conclusion: ECG-gated QISS-MRA is a promising imaging technique for reliable assessment of PAOD without the use of contrast material.

  3. Nonenhanced ECG-gated quiescent-interval single-shot MRA (QISS-MRA) of the lower extremities: Comparison with contrast-enhanced MRA

    International Nuclear Information System (INIS)

    Klasen, J.; Blondin, D.; Schmitt, P.; Bi, X.; Sansone, R.; Wittsack, H.-J.; Kröpil, P.; Quentin, M.; Kuhlemann, J.; Miese, F.; Heiss, C.; Kelm, M.; Antoch, G.; Lanzman, R.S.

    2012-01-01

    Aim: To evaluate electrocardiogram (ECG)-gated quiescent-interval single-shot magnetic resonance angiography (QISS-MRA) for nonenhanced assessment of peripheral artery occlusive disease (PAOD) using contrast-enhanced MRA (CE-MRA) as the reference standard. Materials and methods: Twenty-seven patients (mean age 66.6 ± 10.8 years) with PAOD were included in the study. QISS-MRA and CE-MRA of the lower extremity were performed using a 1.5 T MR scanner. In each patient, subjective image quality and the degree of stenosis were evaluated on a four-point scale for 15 predefined arterial segments. Results: Twenty-five of the 27 patients were considered for analysis. Subjective image quality of QISS-MRA was significantly lower for the distal aorta, pelvic arteries, and femoral arteries as compared to CE-MRA (p < 0.01), while no significant difference was found for other vascular segments. The degree of stenosis was overestimated with QISS-MRA in 23 of 365 (6.3%) segments and underestimated in two of 365 (0.5%) segments. As compared to CE-MRA, QISS-MRA had a high sensitivity (98.6%), specificity (96%) as well as positive and negative predictive value (88.7 and 99.6%, respectively) for the detection of significant stenosis (≥50%). Conclusion: ECG-gated QISS-MRA is a promising imaging technique for reliable assessment of PAOD without the use of contrast material.

  4. Role of Oxygen in Ionic Liquid Gating on Two-Dimensional Cr2Ge2Te6: A Non-oxide Material.

    Science.gov (United States)

    Chen, Yangyang; Xing, Wenyu; Wang, Xirui; Shen, Bowen; Yuan, Wei; Su, Tang; Ma, Yang; Yao, Yunyan; Zhong, Jiangnan; Yun, Yu; Xie, X C; Jia, Shuang; Han, Wei

    2018-01-10

    Ionic liquid gating can markedly modulate a material's carrier density so as to induce metallization, superconductivity, and quantum phase transitions. One of the main issues is whether the mechanism of ionic liquid gating is an electrostatic field effect or an electrochemical effect, especially for oxide materials. Recent observation of the suppression of the ionic liquid gate-induced metallization in the presence of oxygen for oxide materials suggests the electrochemical effect. However, in more general scenarios, the role of oxygen in the ionic liquid gating effect is still unclear. Here, we perform ionic liquid gating experiments on a non-oxide material: two-dimensional ferromagnetic Cr 2 Ge 2 Te 6 . Our results demonstrate that despite the large increase of the gate leakage current in the presence of oxygen, the oxygen does not affect the ionic liquid gating effect on  the channel resistance of Cr 2 Ge 2 Te 6 devices (ionic liquid gating is more effective on the modulation of the channel resistances compared to the back gating across the 300 nm thick SiO 2 .

  5. STM studies of an atomic-scale gate electrode formed by a single charged vacancy in GaAs

    Science.gov (United States)

    Lee, Donghun; Daughton, David; Gupta, Jay

    2009-03-01

    Electric-field control of spin-spin interactions at the atomic level is desirable for the realization of spintronics and spin-based quantum computation. Here we demonstrate the realization of an atomic-scale gate electrode formed by a single charged vacancy on the GaAs(110) surface[1]. We can position these vacancies with atomic precision using the tip of a home-built, low temperature STM. Tunneling spectroscopy of single Mn acceptors is used to quantify the electrostatic field as a function of distance from the vacancy. Single Mn acceptors are formed by substituting Mn adatoms for Ga atoms in the first layer of the p-GaAs(110) surface[2]. Depending on the distance, the in-gap resonance of single Mn acceptors can shift as much as 200meV. Our data indicate that the electrostatic field decays according to a screened Coulomb potential. The charge state of the vacancy can be switched to neutral, as evidenced by the Mn resonance returning to its unperturbed position. Reversible control of the local electric field as well as charged states of defects in semiconductors can open new insights such as realizing an atomic-scale gate control and studying spin-spin interactions in semiconductors. http://www.physics.ohio-state.edu/sim jgupta [1] D. Lee and J.A. Gupta (in preparation) [2] D. Kitchen et al., Nature 442, 436-439 (2006)

  6. High permittivity materials for oxide gate stack in Ge-based metal oxide semiconductor capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Molle, Alessandro, E-mail: alessandro.molle@mdm.infm.i [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Baldovino, Silvia [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy); Spiga, Sabina [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Fanciulli, Marco [Laboratorio Nazionale MDM, CNR-INFM, via C. Olivetti 2, 20041 Agrate Brianza, Milano (Italy); Dipartimento di Scienza dei Materiali, Universita degli Studi di Milano Bicocca, Milano (Italy)

    2010-01-01

    In the effort to ultimately shrink the size of logic devices towards a post-Si era, the integration of Ge as alternative channel material for high-speed p-MOSFET devices and the concomitant coupling with high permittivity dielectrics (high-k) as gate oxides is currently a key-challenge in microelectronics. However, the Ge option still suffers from a number of unresolved drawbacks and open issues mainly related to the thermodynamic and electrical compatibility of Ge substrates with high-k gate stack. Strictly speaking, two main concerns can be emphasized. On one side is the dilemma on which chemical/physical passivation is more suitable to minimize the unavoidable presence of electrically active defects at the oxide/semiconductor interface. On the other side, overcoming the SiO{sub 2} gate stack opens the route to a number of potentially outperforming high-k oxides. Two deposition approaches were here separately adopted to investigate the high-k oxide growth on Ge substrates, the molecular beam deposition (MBD) of Gd{sub 2}O{sub 3} and the atomic layer deposition (ALD) of HfO{sub 2}. In the MBD framework epitaxial and amorphous Gd{sub 2}O{sub 3} films were grown onto GeO{sub 2}-passivated Ge substrates. In this case, Ge passivation was achieved by exploiting the Ge{sup 4+} bonding state in GeO{sub 2} ultra-thin interface layers intentionally deposited in between Ge and the high-k oxide by means of atomic oxygen exposure to Ge. The composition of the interface layer has been characterized as a function of the oxidation temperature and evidence of Ge dangling bonds at the GeO{sub 2}/Ge interface has been reported. Finally, the electrical response of MOS capacitors incorporating Gd{sub 2}O{sub 3} and GeO{sub 2}-passivated Ge substrates has been checked by capacitance-voltage measurements. On the other hand, the structural and electrical properties of HfO{sub 2} films grown by ALD on Ge by using different oxygen precursors, i.e. H{sub 2}O, Hf(O{sup t}Bu){sub 2}(mmp

  7. Single attosecond pulse generation by using plasmon-driven double optical gating technology in crossed metal nanostructures

    Science.gov (United States)

    Feng, Liqiang; Liu, Katheryn

    2018-05-01

    An effective method to obtain the single attosecond pulses (SAPs) by using the multi-cycle plasmon-driven double optical gating (DOG) technology in the specifically designed metal nanostructures has been proposed and investigated. It is found that with the introduction of the crossed metal nanostructures along the driven and the gating polarization directions, not only the harmonic cutoff can be extended, but also the efficient high-order harmonic generation (HHG) at the very highest orders occurs only at one side of the region inside the nanostructure. As a result, a 93 eV supercontinuum with the near stable phase can be found. Further, by properly introducing an ultraviolet (UV) pulse into the driven laser polarization direction (which is defined as the DOG), the harmonic yield can be enhanced by two orders of magnitude in comparison with the singe polarization gating (PG) technology. However, as the polarized angle or the ellipticity of the UV pulse increase, the enhancement of the harmonic yield is slightly reduced. Finally, by superposing the selected harmonics from the DOG scheme, a 30 as SAP with intensity enhancement of two orders of magnitude can be obtained.

  8. Modeling of Dual Gate Material Hetero-dielectric Strained PNPN TFET for Improved ON Current

    Science.gov (United States)

    Kumari, Tripty; Saha, Priyanka; Dash, Dinesh Kumar; Sarkar, Subir Kumar

    2018-01-01

    The tunnel field effect transistor (TFET) is considered to be a promising alternative device for future low-power VLSI circuits due to its steep subthreshold slope, low leakage current and its efficient performance at low supply voltage. However, the main challenging issue associated with realizing TFET for wide scale applications is its low ON current. To overcome this, a dual gate material with the concept of dielectric engineering has been incorporated into conventional TFET structure to tune the tunneling width at source-channel interface allowing significant flow of carriers. In addition to this, N+ pocket is implanted at source-channel junction of the proposed structure and the effect of strain is added for exploring the performance of the model in nanoscale regime. All these added features upgrade the device characteristics leading to higher ON current, low leakage and low threshold voltage. The present work derives the surface potential, electric field expression and drain current by solving 2D Poisson's equation at different boundary conditions. A comparative analysis of proposed model with conventional TFET has been done to establish the superiority of the proposed structure. All analytical results have been compared with the results obtained in SILVACO ATLAS device simulator to establish the accuracy of the derived analytical model.

  9. Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-Ray Irradiation

    CERN Document Server

    Silvestri, M; Gerardin, Simone; Faccio, Federico; Paccagnella, Alessandro

    2010-01-01

    We present new experimental results on heavy ion-induced gate rupture on deep submicron CMOS transistor arrays. Through the use of dedicated test structures, composed by a large number of 130-nm MOSFETs connected in parallel, we show the response to heavy ion irradiation under high stress voltages of devices previously irradiated with X-rays. We found only a slight impact on gate rupture critical voltage at a LET of 32 MeV cm(2) mg(-1) for devices previously irradiated up to 3 Mrad(SiO2), and practically no change for 100 Mrad(SiO2) irradiation, dose of interest for the future super large hadron collider (SLHC).

  10. The Market Gate of Miletus: damages, material characteristics and the development of a compatible mortar for restoration

    Science.gov (United States)

    Siegesmund, Siegfried; Middendorf, Bernhard

    2008-12-01

    The indoor exhibit of the Market Gate of Miletus is unique for an archaeological monument. The reconstruction of the gate was done in such a way that most marble fragments were removed leaving cored marble columns 3-4 cm in thickness. These cored columns were mounted on a steel construction and filled with different mortars or filled with specially shaped blocks of brick combined with mortar. All the missing marble elements were replaced by copies made of a Portland cement based concrete, which is compositionally similar to the original building materials. During the Second World War the monument was heavily damaged by aerial bombardment. For 2 years the Market Gate of Miletus was exposed to weathering, because a brick wall protecting the gate was also destroyed. The deterioration phenomena observed are microcracks, macroscopic fractures, flaking, sugaring, greying, salt efflorescence, calcitic-sinter layers and iron oxide formation etc. The rapid deterioration seems to be due to indoor atmospheric effects, and also by a combination of incompatible materials (e.g. marble, steel, mortar, concrete, bricks etc.). Compatible building materials like mortars or stone replacing materials have to be developed for the planned restoration. The requirements for restoration mortars are chemical-mineralogical and physical-mechanical compatibilities with the existing building materials. In detail this means that the mortar should ensure good bonding properties, adapted strength development and not stain the marble when in direct contact. The favoured mortar was developed with a hydraulic binder based on iron-free white cement and pozzolana based on activated clay. A special limestone and quartz sand mixture was used as an aggregate. The cement was adjusted using chemical additives. Specially designed tests were applied extensively to prove whether the developed mortar is suitable for the restoration of this precious monument.

  11. Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2

    Science.gov (United States)

    Palade, C.; Lepadatu, A. M.; Slav, A.; Lazanu, S.; Teodorescu, V. S.; Stoica, T.; Ciurea, M. L.

    2018-01-01

    Trilayer memory capacitors with Ge nanocrystals (NCs) floating gate in HfO2 were obtained by magnetron sputtering deposition on p-type Si substrate followed by rapid thermal annealing at relatively low temperature of 600 °C. The frequency dispersion of capacitance and resistance was measured in accumulation regime of Al/HfO2 gate oxide/Ge NCs in HfO2 floating gate/HfO2 tunnel oxide/SiOx/p-Si/Al memory capacitors. For simulation of the frequency dispersion a complex circuit model was used considering an equivalent parallel RC circuit for each layer of the trilayer structure. A series resistance due to metallic contacts and Si substrate was necessary to be included in the model. A very good fit to the experimental data was obtained and the parameters of each layer in the memory capacitor, i.e. capacitances and resistances were determined and in turn the intrinsic material parameters, i.e. dielectric constants and resistivities of layers were evaluated. The results are very important for the study and optimization of the hysteresis behaviour of floating gate memories based on NCs embedded in oxide.

  12. Capacitance-voltage characteristics of MOS capacitors with Ge nanocrystals embedded in ZrO2 gate material

    International Nuclear Information System (INIS)

    Lee, Hye-Ryoung; Choi, Samjong; Cho, Kyoungah; Kim, Sangsig

    2007-01-01

    Capacitance versus voltage (C-V) curves of Ge-nanocrystals (NCs)-embedded metal-oxide-semiconductor (MOS) capacitors are characterized in this work. Ge NCs were formed in 20-nm thick ZrO 2 gate layers by ion implantation and subsequent annealing procedures. The formation of the Ge NCs in the ZrO 2 gate layers was confirmed by high-resolution transmission electron microscopy and energy dispersive spectroscopy. The C-V curves obtained from a representative MOS capacitor embedded with the Ge NCs exhibit a 3 V memory window as bias voltage varied from 9 to - 9 V and then back to the initial positive voltage, whereas MOS capacitors without Ge NCs show negligible memory windows at the same voltage range. This indicates the presence of charge storages in the Ge NCs. The counterclockwise hysteresis observed from the C-V curves implies that electrons are trapped in Ge NCs presented inside the ZrO 2 gate layer. And our experimental results obtained from capacitance versus time measurements show good retention characteristics of Ge-NCs-embedded MOS capacitors with ZrO 2 gate material for the application of NFGM

  13. Pulse sequences for suppressing leakage in single-qubit gate operations

    Science.gov (United States)

    Ghosh, Joydip; Coppersmith, S. N.; Friesen, Mark

    2017-06-01

    Many realizations of solid-state qubits involve couplings to leakage states lying outside the computational subspace, posing a threat to high-fidelity quantum gate operations. Mitigating leakage errors is especially challenging when the coupling strength is unknown, e.g., when it is caused by noise. Here we show that simple pulse sequences can be used to strongly suppress leakage errors for a qubit embedded in a three-level system. As an example, we apply our scheme to the recently proposed charge quadrupole (CQ) qubit for quantum dots. These results provide a solution to a key challenge for fault-tolerant quantum computing with solid-state elements.

  14. Fully integrated InGaAs/InP single-photon detector module with gigahertz sine wave gating

    Energy Technology Data Exchange (ETDEWEB)

    Liang Xiaolei; Ma Jian; Jin Ge; Chen Zengbing; Zhang Jun; Pan Jianwei [Hefei National Laboratory for Physical Sciences at Microscale and Department of Modern Physics, University of Science and Technology of China, Hefei, Anhui 230026 (China); Liu Jianhong; Wang Quan; Du Debing [Anhui Quantum Communication Technology Co., Ltd., Hefei, Anhui 230088 (China)

    2012-08-15

    InGaAs/InP single-photon avalanche diodes (SPADs) working in the regime of GHz clock rates are crucial components for the high-speed quantum key distribution (QKD). We have developed for the first time a compact, stable, and user-friendly tabletop InGaAs/InP single-photon detector system operating at a 1.25 GHz gate rate that fully integrates functions for controlling and optimizing SPAD performance. We characterize the key parameters of the detector system and test the long-term stability of the system for continuous operation of 75 h. The detector system can substantially enhance QKD performance and our present work paves the way for practical high-speed QKD applications.

  15. Time-gated single-photon detection module with 110 ps transition time and up to 80 MHz repetition rate

    Energy Technology Data Exchange (ETDEWEB)

    Buttafava, Mauro, E-mail: mauro.buttafava@polimi.it; Boso, Gianluca; Ruggeri, Alessandro; Tosi, Alberto [Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Dalla Mora, Alberto [Politecnico di Milano, Dipartimento di Fisica, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy)

    2014-08-15

    We present the design and characterization of a complete single-photon counting module capable of time-gating a silicon single-photon avalanche diode with ON and OFF transition times down to 110 ps, at repetition rates up to 80 MHz. Thanks to this sharp temporal filtering of incoming photons, it is possible to reject undesired strong light pulses preceding (or following) the signal of interest, allowing to increase the dynamic range of optical acquisitions up to 7 decades. A complete experimental characterization of the module highlights its very flat temporal response, with a time resolution of the order of 30 ps. The instrument is fully user-configurable via a PC interface and can be easily integrated in any optical setup, thanks to its small and compact form factor.

  16. Time-gated single-photon detection module with 110 ps transition time and up to 80 MHz repetition rate

    International Nuclear Information System (INIS)

    Buttafava, Mauro; Boso, Gianluca; Ruggeri, Alessandro; Tosi, Alberto; Dalla Mora, Alberto

    2014-01-01

    We present the design and characterization of a complete single-photon counting module capable of time-gating a silicon single-photon avalanche diode with ON and OFF transition times down to 110 ps, at repetition rates up to 80 MHz. Thanks to this sharp temporal filtering of incoming photons, it is possible to reject undesired strong light pulses preceding (or following) the signal of interest, allowing to increase the dynamic range of optical acquisitions up to 7 decades. A complete experimental characterization of the module highlights its very flat temporal response, with a time resolution of the order of 30 ps. The instrument is fully user-configurable via a PC interface and can be easily integrated in any optical setup, thanks to its small and compact form factor

  17. Electrochemical gate-controlled electron transport of redox-active single perylene bisimide molecular junctions

    International Nuclear Information System (INIS)

    Li, C; Mishchenko, A; Li, Z; Pobelov, I; Wandlowski, Th; Li, X Q; Wuerthner, F; Bagrets, A; Evers, F

    2008-01-01

    We report a scanning tunneling microscopy (STM) experiment in an electrochemical environment which studies a prototype molecular switch. The target molecules were perylene tetracarboxylic acid bisimides modified with pyridine (P-PBI) and methylthiol (T-PBI) linker groups and with bulky tert-butyl-phenoxy substituents in the bay area. At a fixed bias voltage, we can control the transport current through a symmetric molecular wire Au|P-PBI(T-PBI)|Au by variation of the electrochemical 'gate' potential. The current increases by up to two orders of magnitude. The conductances of the P-PBI junctions are typically a factor 3 larger than those of T-PBI. A theoretical analysis explains this effect as a consequence of shifting the lowest unoccupied perylene level (LUMO) in or out of the bias window when tuning the electrochemical gate potential VG. The difference in on/off ratios reflects the variation of hybridization of the LUMO with the electrode states with the anchor groups. I T -E S(T) curves of asymmetric molecular junctions formed between a bare Au STM tip and a T-PBI (P-PBI) modified Au(111) electrode in an aqueous electrolyte exhibit a pronounced maximum in the tunneling current at -0.740, which is close to the formal potential of the surface-confined molecules. The experimental data were explained by a sequential two-step electron transfer process

  18. A computational study of the effects of linear doping profile on the high-frequency and switching performances of hetero-material-gate CNTFETs

    International Nuclear Information System (INIS)

    Wang Wei; Li Na; Ren Yuzhou; Li Hao; Zheng Lifen; Li Jin; Jiang Junjie; Chen Xiaoping; Wang Kai; Xia Chunping

    2013-01-01

    The effects of linear doping profile near the source and drain contacts on the switching and high-frequency characteristics for conventional single-material-gate CNTFET (C-CNTFET) and hetero-material-gate CNTFET (HMG-CNTFET) have been theoretically investigated by using a quantum kinetic model. This model is based on two-dimensional non-equilibrium Green's functions (NEGF) solved self-consistently with Poisson's equations. The simulation results show that at a CNT channel length of 20 nm with chirality (7, 0), the intrinsic cutoff frequency of C-CNTFETs reaches up to a few THz. In addition, a comparison study has been performed between C-and HMG-CNTFETs. For the C-CNTFET, results reveal that a longer linear doping length can improve the cutoff frequency and switching speed. However, it has the reverse effect on on/off current ratios. To improve the on/off current ratios performance of CNTFETs and overcome short-channel effects (SCEs) in high-performance device applications, a novel CNTFET structure with a combination of an HMG and linear doping profile has been proposed. It is demonstrated that the HMG structure design with an optimized linear doping length has improved high-frequency and switching performances as compared to C-CNTFETs. The simulation study may be useful for understanding and optimizing high-performance of CNTFETs and assessing the reliability of CNTFETs for prospective applications. (semiconductor devices)

  19. Dual-Input AND Gate From Single-Channel Thin-Film FET

    Science.gov (United States)

    Miranda, F. A.; Pinto, N. J.; Perez, R.; Mueller, C. H.

    2008-01-01

    A regio-regular poly(3-hexylthiophene) (RRP3HT) thin-film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. RRP3HT is a semiconducting polymer that has a carrier mobility and on/off ratio when used in a field effect transistor (FET) configuration. This commercially available polymer is very soluble in common organic solvents and is easily processed to form uniform thin films. The most important polymer-based device fabricated and studied is the FET, since it forms the building block in logic circuits and switches for active matrix (light-emitting-diode) (LED) displays, smart cards, and radio frequency identification (RFID) cards.

  20. Solar cell structure incorporating a novel single crystal silicon material

    Science.gov (United States)

    Pankove, Jacques I.; Wu, Chung P.

    1983-01-01

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  1. Enhancement of ambipolar characteristics in single-walled carbon nanotubes using C{sub 60} and fabrication of logic gates

    Energy Technology Data Exchange (ETDEWEB)

    Park, Steve [Department of Materials Science and Engineering, Stanford University, Durand Building, 496 Lomita Mall, Stanford, California 94305-4034 (United States); Nam, Ji Hyun [Department of Electrical Engineering, Stanford University, David Packard Building, 350 Serra Mall, Mail Code: 9505, Stanford, California 94305-9505 (United States); Koo, Ja Hoon; Lei, Ting; Bao, Zhenan, E-mail: zbao@stanford.edu [Department of Chemical Engineering, Stanford University, Shriram Center, 443 Via Ortega, Room 307, Stanford, California 94305-4145 (United States)

    2015-03-09

    We demonstrate a technique to convert p-type single-walled carbon nanotube (SWNT) network transistor into ambipolar transistor by thermally evaporating C{sub 60} on top. The addition of C{sub 60} was observed to have two effects in enhancing ambipolar characteristics. First, C{sub 60} served as an encapsulating layer that enhanced the ambipolar characteristics of SWNTs. Second, C{sub 60} itself served as an electron transporting layer that contributed to the n-type conduction. Such a dual effect enables effective conversion of p-type into ambipolar characteristics. We have fabricated inverters using our SWNT/C{sub 60} ambipolar transistors with gain as high as 24, along with adaptive NAND and NOR logic gates.

  2. Intermittent single point machining of brittle materials

    Energy Technology Data Exchange (ETDEWEB)

    Marsh, E

    1999-12-07

    A series of tests were undertaken to explore diamond tool wear in the intermittent cutting of brittle materials, specifically silicon. The tests were carried out on a plain way No. 3 Moore machine base equipped as a flycutter with a motorized Professional Instruments 4R air bearing spindle. The diamond tools were made by Edge Technologies with known crystal orientation and composition and sharpened with either an abrasive or chemical process, depending on the individual test. The flycutting machine configuration allowed precise control over the angle at which the tool engages the anisotropic silicon workpiece. In contrast, the crystallographic orientation of the silicon workpiece changes continuously during on-axis turning. As a result, it is possible to flycut a workpiece in cutting directions that are known to be easy or hard. All cuts were run in the 100 plane of the silicon, with a slight angle deliberately introduced to ensure that the 100 plane is engaged in ''up-cutting'' which lengthens the tool life. A Kistler 9256 dynamometer was used to measure the cutting forces in order to gain insight into the material removal process and tool wear during testing. The dynamometer provides high bandwidth force measurement with milli-Newton resolution and good thermal stability. After many successive passes over the workpiece, it was observed that the cutting forces grow at a rate that is roughly proportional to the degradation of the workpiece surface finish. The exact relationship between cutting force growth and surface finish degradation was not quantified because of the problems associated with measuring surface finish in situ. However, a series of witness marks were made during testing in an aluminum sample that clearly show the development of wear flats on the tool nose profile as the forces grow and the surface finish worsens. The test results show that workpieces requiring on the order of two miles of track length can be made with low tool

  3. All-optical XOR logic gate using intersubband transition in III-V quantum well materials.

    Science.gov (United States)

    Feng, Jijun; Akimoto, Ryoichi; Gozu, Shin-ichiro; Mozume, Teruo

    2014-06-02

    A monolithically integrated all-optical exclusive-OR (XOR) logic gate is experimentally demonstrated based on a Michelson interferometer (MI) gating device in InGaAs/AlAsSb coupled double quantum wells (CDQWs). The MI arms can convert the pump data with return-to-zero ON-OFF keying (RZ OOK) to binary phase-shift keying (BPSK) format, then two BPSK signals can interfere with each other for realizing a desired logical operation. All-optical format conversion from the RZ OOK to BPSK is based on the cross-phase modulation to the transverse electric (TE) probe wave, which is caused by the intersubband transition excited by the transverse magnetic (TM) pump light. Bit error rate measurements show that error free operation for both BPSK format conversion and XOR logical operation can be achieved.

  4. Factors affecting accuracy of ventricular volume and ejection fraction measured by gated Tl-201 myocardial perfusion single photon emission computed tomography

    International Nuclear Information System (INIS)

    Pai, Moon Sun; Yang, You Jung; Im, Ki Chun; Hong, Il Ki; Yun, Sung Cheol; Kang, Duk Hyun; Song, Jae Kwan; Moon, Dae Hyuk

    2005-01-01

    Systemic errors in the gated single photon emission computed tomography (SPECT) measurement of left ventricular (LV) end-diastolic volume (EDV), end-systolic volume (ESV) and ejection fraction (EF) may occur. We evaluated whether patient-related factors affected the accuracy of EDV, ESV, and EF measured by electrocardiogram-gated Tl-201 SPECT. A total of 518 patients without perfusion defects on Tl-201 SPECT or coronary artery disease were studied. EDV, ESV, and EF were measured from echocardiography and adenosine stress/redistribution gated Tl-201 SPECT using commercially available software packages (QGS and 4D-MSPECT). We identified factors affecting the accuracy of gated SPECT via multiple linear regression analysis of the differences between echocardiography and gated SPECT. Gated SPECT analyzed with QGS underestimated EDV and ESV, and overestimated EF, but 4D-MSPECT overestimated all those values (p<0.001). Independent variables that increased the difference in EDV between echocardiography and gated SPECT were decreasing LV end-diastolic wall thickness, decreasing body surface area, female sex and increasing EDV (p< 0.001). Those for ESV were decreasing LV end-systolic wall thickness, female sex, and decreasing ESV (p<0.001). Increasing end-systolic wall thickness, male sex and decreasing age were independent determinants associated with an increased difference in EF (p< 0.001). Adenosine stress SPECT showed significantly higher EDV and ESV values and a lower EF than did redistribution SPECT (p< 0.001). In determination of EF, QGS demonstrated a smaller bias than did 4D-MSPECT. However, in men with LV hypertrophy, 4D-MSPECT was superior to QGS. Systemic error by gated Tl-201 SPECT is determined by individual patient-characteristics

  5. Evaluation of left ventricular function and volume in patients with dilated cardiomyopathy: Gated myocardial single-photon emission tomography (SPECT) versus echocardiography

    International Nuclear Information System (INIS)

    Berk, Fatma; Isgoren, S.; Demir, H.; Kozdag, G.; Ural, D.; Komsuoglu, B.

    2005-01-01

    Left ventricular function, volumes and regional wall motion provide valuable diagnostic information and are of long-term prognostic importance in patients with dilated cardiomyopathy (DCM). This study was designed to compare the effectiveness of 2D-echocardiography and gated single-photon emission tomography (SPECT) for evaluation of these parameters in patients with DCM. Gated SPECT and 2D-echocardiography were performed in 33 patients having DCM. Gated SPECT data, including left ventricular ejection fraction (LVEF), were processed using an automated algorithm. Standard technique was used for 2D-echocardiography. Regional wall motion was evaluated using both modalities and was scored by two independent observers using a 16-sement model with a 5-point scoring system. The overall agreement between the two imaging modalities for the assessment of regional wall motion was 56% (298/528 segments). With gated SPECT, LEVF, end-diastolic volume (EDV), and end-diastolic volume (EDV), and end-systolic volume (ESV) were 27+-9%, 217+-73mL, respectively, and 30.8%, 195+-58mL and, 137+-48 mL with echocardiography. The correlation between gated SPECT and 2-D-echocardiography was good (r=0.76, P<0.01) for the assessment of LVEF. The correlation for EDV and ESV were also good, but with wider limits of agreement (r=0.72, P<0.01 and r=0.73, P<0.01, respectively) and significantly higher values were obtained with gated SPECT (P<0.01). Gated SPECT and 2D-echocardiography correlate well for the assessment of LV function and LV volumes. Like 2D-echocardiography, gated SPECT provides reliable information about LV function and dimension with the additional advantage of perfusion data. (author)

  6. An Al₂O₃ Gating Substrate for the Greater Performance of Field Effect Transistors Based on Two-Dimensional Materials.

    Science.gov (United States)

    Yang, Hang; Qin, Shiqiao; Zheng, Xiaoming; Wang, Guang; Tan, Yuan; Peng, Gang; Zhang, Xueao

    2017-09-22

    We fabricated 70 nm Al₂O₃ gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al₂O₃/Si substrate is superior to that on a traditional 300 nm SiO₂/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al₂O₃/Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a higher dielectric constant. Furthermore, this substrate is also suitable for other 2D materials, such as WS₂, and can enhance the transconductance remarkably by 61.3 times. These results demonstrate a new and ideal substrate for the fabrication of 2D materials-based electronic logic devices.

  7. Assessment of the effect of revascularization early after CABG using ECG-gated perfusion single-photon emission tomography

    International Nuclear Information System (INIS)

    Kubo, Shigeto; Tadamura, Eiji; Kudoh, Takashi; Inubushi, Masayuki; Konishi, Junji; Ikeda, Tadashi; Koshiji, Takaaki; Nishimura, Kazunobu; Komeda, Masashi; Tamaki, Nagara

    2001-01-01

    When an arterial graft is used, reversible perfusion defects on single-photon emission tomography (SPET) perfusion images are occasionally observed early after coronary artery bypass graft surgery (CABG), owing to the restricted flow capacity. The purpose of this study was to determine whether the functional information obtained with electrocardiography (ECG)-gated perfusion SPET could be helpful in evaluating the effect of revascularization early after CABG. Twenty-three patients (18 men and 5 women, mean age 65±9 years) underwent stress/re-injection thallium-201 ECG-gated SPET before and 4 weeks after CABG (13 with exercise and 10 with dipyridamole). Patency of all grafts was confirmed by coronary angiography 1 month after CABG. Cardiac functional data including the left ventricular ejection fraction (LVEF) and the transient ischaemic dilatation (TID) ratio were analysed using a commercially available automated program. The conventional stress and re-injection tomograms were interpreted by means of a five-point scoring system in a nine-segment model. Stress-induced reversible 201 Tl perfusion defects were present in 64% of the myocardial segments bypassed by patent arterial grafts, in contrast to 42% of the myocardial segments bypassed by patent venous grafts (χ 2 =7.8, P=0.005). Of the 23 patients, 12 showed improvement in summed ischaemic scores (group 1), while 11 had no change or deterioration (group 2), although all grafts were patent on postoperative catheterization. The TID ratio improved in both group 1 and group 2 before and after CABG (1.14±0.13 vs 0.99±0.07, P=0.001 and 1.09±0.07 vs 0.94±0.05, P=0.002, respectively). However, LVEF did not significantly improve in group 1 or group 2 after CABG (42.5%±9.9% vs 47.5%±11.8%, and 52.1%±7.5% vs 53.1%±5.9%, respectively). Perfusion imaging or LVEF assessment is of limited value early after CABG. The TID ratio obtained with ECG-gated perfusion SPET may be a useful marker to evaluate the effect of

  8. Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for Single-Event Gate Rupture and Single-Event Burnout

    Science.gov (United States)

    Scheick, Leif

    2014-01-01

    Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture's data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data. Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most commonly used power transistor. MOSFETs are typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single-event gate rupture (SEGR) or single-event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. See [1] through [5] for more information. The objective of this effort was to investigate the SEGR and SEB responses of two power MOSFETs recently produced. These tests will serve as a limited verification of these parts. It is acknowledged that further testing on the respective parts may be needed for some mission profiles.

  9. Mechanics of biopolymer materials: Single chains to bulk properties

    NARCIS (Netherlands)

    Amuasi, H.E.; Storm, C.

    2010-01-01

    We outline the first stages in the multiscale modeling of biopolymer materials, starting with the statistical mechanics of single stiff chains. In the first coarse graining step, we demonstrate how to integrate out the single polymer degrees of freedom in supramolecular assemblies of such

  10. NASA Electronic Parts and Packaging Field Programmable Gate Array Single Event Effects Test Guideline Update

    Science.gov (United States)

    Berg, Melanie D.; LaBel, Kenneth A.

    2018-01-01

    The following are updated or new subjects added to the FPGA SEE Test Guidelines manual: academic versus mission specific device evaluation, single event latch-up (SEL) test and analysis, SEE response visibility enhancement during radiation testing, mitigation evaluation (embedded and user-implemented), unreliable design and its affects to SEE Data, testing flushable architectures versus non-flushable architectures, intellectual property core (IP Core) test and evaluation (addresses embedded and user-inserted), heavy-ion energy and linear energy transfer (LET) selection, proton versus heavy-ion testing, fault injection, mean fluence to failure analysis, and mission specific system-level single event upset (SEU) response prediction. Most sections within the guidelines manual provide information regarding best practices for test structure and test system development. The scope of this manual addresses academic versus mission specific device evaluation and visibility enhancement in IP Core testing.

  11. 125 GHz sine wave gating InGaAs/InP single-photon detector with a monolithically integrated readout circuit

    Science.gov (United States)

    Jiang, Wen-Hao; Liu, Jian-Hong; Liu, Yin; Jin, Ge; Zhang, Jun; Pan, Jian-Wei

    2017-12-01

    InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. Gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and reducing module size are important challenges for the design of such detector system. Here we present for the first time an InGaAs/InP SPD with 1.25 GHz sine wave gating using a monolithically integrated readout circuit (MIRC). The MIRC has a size of 15 mm * 15 mm and implements the miniaturization of avalanche extraction for high-frequency sine wave gating. In the MIRC, low-pass filters and a low-noise radio frequency amplifier are integrated based on the technique of low temperature co-fired ceramic, which can effectively reduce the parasitic capacitance and extract weak avalanche signals. We then characterize the InGaAs/InP SPD to verify the functionality and reliability of MIRC, and the SPD exhibits excellent performance with 27.5 % photon detection efficiency, 1.2 kcps dark count rate, and 9.1 % afterpulse probability at 223 K and 100 ns hold-off time. With this MIRC, one can further design miniaturized high-frequency SPD modules that are highly required for practical applications.

  12. High-sensitivity pH sensor using separative extended-gate field-effect transistors with single-walled carbon-nanotube networks

    Science.gov (United States)

    Pyo, Ju-Young; Cho, Won-Ju

    2018-04-01

    We fabricate high-sensitivity pH sensors using single-walled carbon-nanotube (SWCNT) network thin-film transistors (TFTs). The sensing and transducer parts of the pH sensor are composed of separative extended-sensing gates (ESGs) with SnO2 ion-sensitive membranes and double-gate structure TFTs with thin SWCNT network channels of ∼1 nm and AlO x top-gate insulators formed by the solution-deposition method. To prevent thermal process-induced damages on the SWCNT channel layer due to the post-deposition annealing process and improve the electrical characteristics of the SWCNT-TFTs, microwave irradiation is applied at low temperatures. As a result, a pH sensitivity of 7.6 V/pH, far beyond the Nernst limit, is obtained owing to the capacitive coupling effect between the top- and bottom-gate insulators of the SWCNT-TFTs. Therefore, double-gate structure SWCNT-TFTs with separated ESGs are expected to be highly beneficial for high-sensitivity disposable biosensor applications.

  13. Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon—germanium substrates

    International Nuclear Information System (INIS)

    Tiwari Pramod Kumar; Saramekala Gopi Krishna; Mukhopadhyay Anand Kumar; Dubey Sarvesh

    2014-01-01

    The present work gives some insight into the subthreshold behaviour of short-channel double-material-gate strained-silicon on silicon—germanium MOSFETs in terms of subthreshold swing and off-current. The formulation of subthreshold current and, thereupon, the subthreshold swing have been done by exploiting the expression of potential distribution in the channel region of the device. The dependence of the subthreshold characteristics on the device parameters, such as Ge mole fraction, gate length ratio, work function of control gate metal and gate length, has been tested in detail. The analytical models have been validated by the numerical simulation results that were obtained from the device simulation software ATLAS™ by Silvaco Inc. (semiconductor devices)

  14. Re-Verification of the IRHN57133SE and IRHN57250SE for Single Event Gate Rupture and Single Event Burnout

    Science.gov (United States)

    Scheick, Leif

    2010-01-01

    The vertical metal oxide semiconductor field-effect transistor (MOSFET) is a widely used power transistor onboard a spacecraft. The MOSFET is typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single event gate rupture (SEGR) or single event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. These radiation hardened devices are not immune to SEGR or SEB but, rather, can exhibit them at a much more damaging ion than their non-radiation hardened counterparts. See [1] through [5] for more information.This effort was to investigate the SEGR and SEB responses of two power MOSFETs from IR(the IRHN57133SE and the IRHN57250SE) that have recently been produced on a new fabrication line. These tests will serve as a limited verification of these parts, but it is acknowledged that further testing on the respective parts may be needed for some mission profiles.

  15. Gating circuit for single photon-counting fluorescence lifetime instruments using high repetition pulsed light sources

    International Nuclear Information System (INIS)

    Laws, W.R.; Potter, D.W.; Sutherland, J.C.

    1984-01-01

    We have constructed a circuit that permits conventional timing electronics to be used in single photon-counting fluorimeters with high repetition rate excitation sources (synchrotrons and mode-locked lasers). Most commercial time-to-amplitude and time-to-digital converters introduce errors when processing very short time intervals and when subjected to high-frequency signals. This circuit reduces the frequency of signals representing the pulsed light source (stops) to the rate of detected fluorescence events (starts). Precise timing between the start/stop pair is accomplished by using the second stop pulse after a start pulse. Important features of our design are that the circuit is insensitive to the simultaneous occurrence of start and stop signals and that the reduction in the stop frequency allows the start/stop time interval to be placed in linear regions of the response functions of commercial timing electronics

  16. Light-gated single CdSe nanowire transistor: photocurrent saturation and band gap extraction

    Energy Technology Data Exchange (ETDEWEB)

    Zhang, Yang, E-mail: yangzh08@gmail.com; Chakraborty, Ritun; Kudera, Stefan; Krahne, Roman, E-mail: roman.krahne@iit.it [Istituto Italiano di Tecnologia, Nanochemistry department (Italy)

    2015-11-15

    CdSe nanowires are popular building blocks for many optoelectronic devices mainly owing to their direct band gap in the visible range of the spectrum. Here we investigate the optoelectronic properties of single CdSe nanowires fabricated by colloidal synthesis, in terms of their photocurrent–voltage characteristics and photoconductivity spectra recorded at 300 and 18 K. The photocurrent is identified as the secondary photocurrent, which gives rise to a photoconductive gain of ∼35. We observe a saturation of the photocurrent beyond a certain voltage bias that can be related to the finite drift velocity of electrons. From the photoconductivity spectra, we determine the band gap energy of the nanowires as ∼1.728 eV, and we resolve low-energy peaks that can be associated with sub-bandgap states.Graphical Abstract.

  17. Engineering evaluation/cost analysis for the proposed removal of contaminated materials at the Elza Gate site, Oak Ridge, Tennessee

    International Nuclear Information System (INIS)

    1991-06-01

    This engineering evaluation/cost analysis (EE/CA) has been prepared in support of the proposed removal action for cleanup of radioactive and chemically contaminated soil at the Elza Gate site in Oak Ridge, Tennessee. This property became contaminated as a result of storage of ore residues, equipment, and other materials for the US Atomic Energy Commission. The US Department of Energy is responsible for cleanup of portions of the site under its Formerly Utilized Sites Remedial Action Program. In December 1990 an area known as Pad 1 was abrasively scoured to remove surface contamination, and in March 1991 removal of Pad 1 contamination was begun under a separate EE/CA. This EE/CA is intended to cover the remaining portions of the site for which the Department of Energy has responsibility. It has been determined that an EE/CA report is appropriate documentation for the proposed removal action. This EE/CA covers removal of contaminated soils and contaminated concrete rubble from the Elza Gate site. The primary objectives of this EE/CA report are to identify and describe the preferred removal action, and to document the selection of response activities that will mitigate the potential for release of contaminants from the property into the environment and that will minimize the associated threats to human health or welfare and the environment. The preferred alternative is disposition on the Oak Ridge Reservation. 30 refs., 7 figs., 12 tabs

  18. Abnormal response to mental stress in patients with Takotsubo cardiomyopathy detected by gated single photon emission computed tomography

    International Nuclear Information System (INIS)

    Sciagra, Roberto; Genovese, Sabrina; Pupi, Alberto; Parodi, Guido; Bellandi, Benedetta; Antoniucci, David; Del Pace, Stefano; Zampini, Linda; Gensini, Gian Franco

    2010-01-01

    Persistent abnormalities are usually not detected in patients with Takotsubo cardiomyopathy (TTC). Since sympathetically mediated myocardial damage has been proposed as a causative mechanism of TTC, we explored whether mental stress could evoke abnormalities in these patients. One month after an acute event, 22 patients fulfilling all TTC diagnostic criteria and 11 controls underwent resting and mental stress gated single photon emission computed tomography (SPECT). Perfusion, wall motion, transient ischaemic dilation (TID) and left ventricular (LV) ejection fraction (EF) were evaluated. None of the controls showed stress-induced abnormalities. Mental stress evoked regional changes (perfusion defects and/or wall motion abnormality) in 16 TTC subjects and global abnormalities (LVEF fall >5% and/or TID >1.10) in 13; 3 had a completely negative response. TID, delta LVEF and delta wall motion score were significantly different in TTC vs control patients: 1.08 ± 0.20 vs 0.95 ± 0.11 (p < 0.05), -1.7 ± 6% vs 4 ± 5% (p < 0.02) and 2.5 (0, 4.25) vs 0 (0, 0) (p < 0.002), respectively. Mental stress may evoke regional and/or global abnormalities in most TTC patients. The abnormal response to mental stress supports the role of sympathetic stimulation in TTC. Mental stress could thus be helpful for TTC evaluation. (orig.)

  19. Exercise-induced stunning continues for at least one hour: evaluation with quantitative gated single-photon emission tomography

    International Nuclear Information System (INIS)

    Paul, A.K.; Hasegawa, Shinji; Yoshioka, Jun; Tsujimura, Eiichiro; Yamaguchi, Hitoshi; Tokita, Naoki; Maruyama, Atsushi; Xiuli, Mu; Nishimura, Tsunehiko

    1999-01-01

    To elucidate the after-effect of exercise on left ventricular (LV) function, end-diastolic volume (EDV), end-systolic volume (ESV) and ejection fraction (LVEF) were evaluated at 1 h after exercise and at rest by technetium-99m tetrofosmin gated myocardial single-photon emission tomography (SPET) using an automated program in 53 subjects. The subjects were grouped as follows: normal scan (n = 16), ischaemia (n = 19) and infarction (n = 18), based on the interpretation of perfusion images. Postexercise LVEF did not differ from resting LVEF in the groups with normal scan and infarction. In patients with ischaemia, postexercise EDV (90±17 ml, mean ±SD) and ESV (44±15 ml) were significantly higher than EDV (84±15 ml, P = 0.001) and ESV (36±14 ml, P<0.0005) at rest. LVEF was significantly depressed 1 h after exercise (53%±9% vs 58%±9%, P<0.0001). In ischaemic patients with depressed postexercise LVEF, LVEF difference between rest and postexercise showed a significant correlation with the sum of defect scores, which were reversible from exercise to rest perfusion images (r = 0.92, P<0.0001). These results indicate that exercise-induced LV dysfunction (myocardial stunning) continues for at least 1 h in ischaemic patients and that the extent of LVEF depression is determined by the severity of ischaemia. (orig.)

  20. Exercise-induced stunning continues for at least one hour: evaluation with quantitative gated single-photon emission tomography

    Energy Technology Data Exchange (ETDEWEB)

    Paul, A.K.; Hasegawa, Shinji; Yoshioka, Jun; Tsujimura, Eiichiro; Yamaguchi, Hitoshi; Tokita, Naoki; Maruyama, Atsushi; Xiuli, Mu; Nishimura, Tsunehiko [Division of Tracer Kinetics, Biomedical Research Center, Osaka University Medical School, Suita, Osaka (Japan)

    1999-04-29

    To elucidate the after-effect of exercise on left ventricular (LV) function, end-diastolic volume (EDV), end-systolic volume (ESV) and ejection fraction (LVEF) were evaluated at 1 h after exercise and at rest by technetium-99m tetrofosmin gated myocardial single-photon emission tomography (SPET) using an automated program in 53 subjects. The subjects were grouped as follows: normal scan (n = 16), ischaemia (n = 19) and infarction (n = 18), based on the interpretation of perfusion images. Postexercise LVEF did not differ from resting LVEF in the groups with normal scan and infarction. In patients with ischaemia, postexercise EDV (90{+-}17 ml, mean {+-}SD) and ESV (44{+-}15 ml) were significantly higher than EDV (84{+-}15 ml, P = 0.001) and ESV (36{+-}14 ml, P<0.0005) at rest. LVEF was significantly depressed 1 h after exercise (53%{+-}9% vs 58%{+-}9%, P<0.0001). In ischaemic patients with depressed postexercise LVEF, LVEF difference between rest and postexercise showed a significant correlation with the sum of defect scores, which were reversible from exercise to rest perfusion images (r = 0.92, P<0.0001). These results indicate that exercise-induced LV dysfunction (myocardial stunning) continues for at least 1 h in ischaemic patients and that the extent of LVEF depression is determined by the severity of ischaemia. (orig.) With 7 figs., 19 refs.

  1. Gigahertz-gated InGaAs/InP single-photon detector with detection efficiency exceeding 55% at 1550 nm

    International Nuclear Information System (INIS)

    Comandar, L. C.; Fröhlich, B.; Dynes, J. F.; Sharpe, A. W.; Lucamarini, M.; Yuan, Z. L.; Shields, A. J.; Penty, R. V.

    2015-01-01

    We report on a gated single-photon detector based on InGaAs/InP avalanche photodiodes (APDs) with a single-photon detection efficiency exceeding 55% at 1550 nm. Our detector is gated at 1 GHz and employs the self-differencing technique for gate transient suppression. It can operate nearly dead time free, except for the one clock cycle dead time intrinsic to self-differencing, and we demonstrate a count rate of 500 Mcps. We present a careful analysis of the optimal driving conditions of the APD measured with a dead time free detector characterization setup. It is found that a shortened gate width of 360 ps together with an increased driving signal amplitude and operation at higher temperatures leads to improved performance of the detector. We achieve an afterpulse probability of 7% at 50% detection efficiency with dead time free measurement and a record efficiency for InGaAs/InP APDs of 55% at an afterpulse probability of only 10.2% with a moderate dead time of 10 ns

  2. Fluorescence-based high-throughput functional profiling of ligand-gated ion channels at the level of single cells.

    Directory of Open Access Journals (Sweden)

    Sahil Talwar

    Full Text Available Ion channels are involved in many physiological processes and are attractive targets for therapeutic intervention. Their functional properties vary according to their subunit composition, which in turn varies in a developmental and tissue-specific manner and as a consequence of pathophysiological events. Understanding this diversity requires functional analysis of ion channel properties in large numbers of individual cells. Functional characterisation of ligand-gated channels involves quantitating agonist and drug dose-response relationships using electrophysiological or fluorescence-based techniques. Electrophysiology is limited by low throughput and high-throughput fluorescence-based functional evaluation generally does not enable the characterization of the functional properties of each individual cell. Here we describe a fluorescence-based assay that characterizes functional channel properties at single cell resolution in high throughput mode. It is based on progressive receptor activation and iterative fluorescence imaging and delivers >100 dose-responses in a single well of a 384-well plate, using α1-3 homomeric and αβ heteromeric glycine receptor (GlyR chloride channels as a model system. We applied this assay with transiently transfected HEK293 cells co-expressing halide-sensitive yellow fluorescent protein and different GlyR subunit combinations. Glycine EC50 values of different GlyR isoforms were highly correlated with published electrophysiological data and confirm previously reported pharmacological profiles for the GlyR inhibitors, picrotoxin, strychnine and lindane. We show that inter and intra well variability is low and that clustering of functional phenotypes permits identification of drugs with subunit-specific pharmacological profiles. As this method dramatically improves the efficiency with which ion channel populations can be characterized in the context of cellular heterogeneity, it should facilitate systems

  3. Heterogeneous Monolithic Integration of Single-Crystal Organic Materials.

    Science.gov (United States)

    Park, Kyung Sun; Baek, Jangmi; Park, Yoonkyung; Lee, Lynn; Hyon, Jinho; Koo Lee, Yong-Eun; Shrestha, Nabeen K; Kang, Youngjong; Sung, Myung Mo

    2017-02-01

    Manufacturing high-performance organic electronic circuits requires the effective heterogeneous integration of different nanoscale organic materials with uniform morphology and high crystallinity in a desired arrangement. In particular, the development of high-performance organic electronic and optoelectronic devices relies on high-quality single crystals that show optimal intrinsic charge-transport properties and electrical performance. Moreover, the heterogeneous integration of organic materials on a single substrate in a monolithic way is highly demanded for the production of fundamental organic electronic components as well as complex integrated circuits. Many of the various methods that have been designed to pattern multiple heterogeneous organic materials on a substrate and the heterogeneous integration of organic single crystals with their crystal growth are described here. Critical issues that have been encountered in the development of high-performance organic integrated electronics are also addressed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Evaluation of left ventricular function and volumes in patients with ischaemic cardiomyopathy: gated single-photon emission computed tomography versus two-dimensional echocardiography

    International Nuclear Information System (INIS)

    Vourvouri, E.C.; Poldermans, D.; Sianos, G.; Sozzi, F.B.; Schinkel, A.F.L.; Sutter, J. de; Roelandt, J.R.T.C.; Bax, J.J.; Parcharidis, G.; Valkema, R.

    2001-01-01

    The objective of this study was to perform a head-to-head comparison between two-dimensional (2D) echocardiography and gated single-photon emission computed tomography (SPET) for the evaluation of left ventricular (LV) function and volumes in patients with severe ischaemic LV dysfunction. Thirty-two patients with chronic ischaemic LV dysfunction [mean LV ejection fraction (EF) 25%±6%] were studied with gated SPET and 2D echocardiography. Regional wall motion was evaluated by both modalities and scored by two independent observers using a 16-segment model with a 5-point scoring system (1= normokinesia, 2= mild hypokinesia, 3= severe hypokinesia, 4= akinesia and 5= dyskinesia). LVEF and LV end-diastolic and end-systolic volumes were evaluated by 2D echocardiography using the Simpson's biplane discs method. The same parameters were calculated using quantitative gated SPET software (QGS, Cedars-Sinai Medical Center). The overall agreement between the two imaging modalities for assessment of regional wall motion was 69%. The correlations between gated SPET and 2D echocardiography for the assessment of end-diastolic and end-systolic volumes were excellent (r=0.94, P<0.01, and r=0.96, P<0.01, respectively). The correlation for LVEF was also good (r=0.83, P<0.01). In conclusion: in patients with ischaemic cardiomyopathy, close and significant relations between gated SPET and 2D echocardiography were observed for the assessment of regional and global LV function and LV volumes; gated SPET has the advantage that it provides information on both LV function/dimensions and perfusion. (orig.)

  5. Single-crystal growth of ceria-based materials

    International Nuclear Information System (INIS)

    Ulbrich, Gregor

    2015-01-01

    In this work it could be shown that Skull-Melting is a suitable method for growing ceria single crystals. Twenty different ceria-based single crystals could be manufactured. It was possible to dope ceria single crystals with Gd, Sm, Y, Zr, Ti, Ta, and Pr in different concentrations. Also co-doping with the named metals was realized. However, there remain some problems for growing ceria-based single crystals by Skull-Melting. As ignition metal zirconium was used because no ceria-based material works well. For that reason all single crystals show small zirconium contamination. Another problem is the formation of oxygen by the heat-induced reduction of ceria during the melting process. Because of that the skull of sintered material is often destroyed by gas pressure. This problem had to be solved individually for every single crystal. The obtained single crystals were characterized using different methods. To ensure the single crystal character the y were examined by Laue diffraction. All manufactured crystals are single crystals. Also powder diffraction patterns of the milled and oxidized samples were measured. For the determination of symmetry and metric the structural parameters were analyzed by the Rietveld method. All synthesized materials crystallize in space group Fm-3m known from calcium fluoride. The cubic lattice parameter a was determined for all crystals. In the case of series with different cerium and zirconium concentrations a linear correlation between cerium content and cubic lattice parameter was detected. The elemental composition was determined by WDX. All crystals show a homogeneous elemental distribution. The oxygen content was calculated because the WDX method isn't useful for determination.

  6. Two-dimensional model for subthreshold current and subthreshold swing of graded-channel dual-material double-gate (GCDMDG) MOSFETs

    Science.gov (United States)

    Goel, Ekta; Kumar, Sanjay; Singh, Balraj; Singh, Kunal; Jit, Satyabrata

    2017-06-01

    The subthreshold performance of graded-channel dual-material double-gate (GCDMDG) MOSFETs is examined through two-dimensional (2D) analytical modeling of subthreshold-current (SC) and subthreshold-swing (SS). The potential function obtained by using the parabolic approach to solve the 2D Poisson's equation, has been used to formulate SC and SS characteristics of the device. The variations of SS against different device parameters have been obtained with the help of effective conduction path parameter. The SC and SS characteristics of the GCDMDG MOS transistor have been compared with those of the dual-material double-gate (DMDG) and simple graded-channel double-gate (GCDG) MOS structures to show its better subthreshold characteristics over the latter two devices. The results of the developed model are well-agreed with the commercially available SILVACO ATLAS™ simulator data.

  7. Gate-Tunable Spin Exchange Interactions and Inversion of Magnetoresistance in Single Ferromagnetic ZnO Nanowires.

    Science.gov (United States)

    Modepalli, Vijayakumar; Jin, Mi-Jin; Park, Jungmin; Jo, Junhyeon; Kim, Ji-Hyun; Baik, Jeong Min; Seo, Changwon; Kim, Jeongyong; Yoo, Jung-Woo

    2016-04-26

    Electrical control of ferromagnetism in semiconductor nanostructures offers the promise of nonvolatile functionality in future semiconductor spintronics. Here, we demonstrate a dramatic gate-induced change of ferromagnetism in ZnO nanowire (NW) field-effect transistors (FETs). Ferromagnetism in our ZnO NWs arose from oxygen vacancies, which constitute deep levels hosting unpaired electron spins. The magnetic transition temperature of the studied ZnO NWs was estimated to be well above room temperature. The in situ UV confocal photoluminescence (PL) study confirmed oxygen vacancy mediated ferromagnetism in the studied ZnO NW FET devices. Both the estimated carrier concentration and temperature-dependent conductivity reveal the studied ZnO NWs are at the crossover of the metal-insulator transition. In particular, gate-induced modulation of the carrier concentration in the ZnO NW FET significantly alters carrier-mediated exchange interactions, which causes even inversion of magnetoresistance (MR) from negative to positive values. Upon sweeping the gate bias from -40 to +50 V, the MRs estimated at 2 K and 2 T were changed from -11.3% to +4.1%. Detailed analysis on the gate-dependent MR behavior clearly showed enhanced spin splitting energy with increasing carrier concentration. Gate-voltage-dependent PL spectra of an individual NW device confirmed the localization of oxygen vacancy-induced spins, indicating that gate-tunable indirect exchange coupling between localized magnetic moments played an important role in the remarkable change of the MR.

  8. 1.25  GHz sine wave gating InGaAs/InP single-photon detector with a monolithically integrated readout circuit.

    Science.gov (United States)

    Jiang, Wen-Hao; Liu, Jian-Hong; Liu, Yin; Jin, Ge; Zhang, Jun; Pan, Jian-Wei

    2017-12-15

    InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. The gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and reducing the module size are important challenges for the design of such a detector system. Here we present for the first time, to the best of our knowledge, an InGaAs/InP SPD with 1.25 GHz sine wave gating (SWG) using a monolithically integrated readout circuit (MIRC). The MIRC has a size of 15  mm×15  mm and implements the miniaturization of avalanche extraction for high-frequency SWG. In the MIRC, low-pass filters and a low-noise radio frequency amplifier are integrated based on the technique of low temperature co-fired ceramic, which can effectively reduce the parasitic capacitance and extract weak avalanche signals. We then characterize the InGaAs/InP SPD to verify the functionality and reliability of the MIRC, and the SPD exhibits excellent performance with 27.5% photon detection efficiency, a 1.2 kcps dark count rate, and 9.1% afterpulse probability at 223 K and 100 ns hold-off time. With this MIRC, one can further design miniaturized high-frequency SPD modules that are highly required for practical applications.

  9. ECG-gated quiescent-interval single-shot MR angiography of the lower extremities: Initial experience at 3 T

    International Nuclear Information System (INIS)

    Knobloch, G.; Gielen, M.; Lauff, M.-T.; Romano, V.C.; Schmitt, P.; Rick, M.; Kröncke, T.J.; Huppertz, A.; Hamm, B.; Wagner, M.

    2014-01-01

    Aim: To evaluate the feasibility of unenhanced electrocardiography (ECG)-gated quiescent-interval single-shot magnetic resonance angiography (QISS-MRA) of the lower extremities at 3 T. Materials and methods: Twenty-five patients with known or suspected peripheral arterial disease underwent ECG-gated QISS-MRA and contrast-enhanced MRA (CE-MRA) at 3 T. Two independent readers performed a per-segment evaluation of the MRA datasets. Image quality was rated on a four-point scale (1 = excellent to 4 = non-diagnostic; presented as medians with interquartile range). Diagnostic performance of QISS-MRA was evaluated using CE-MRA as the reference standard. Results: QISS-MRA and CE-MRA of all patients were considered for analysis, resulting in 807 evaluated vessel segments for each MRA technique. Readers 1 and 2 rated image quality of QISS-MRA as diagnostic in 97.3% and 97% of the vessel segments, respectively. CE-MRA was rated diagnostic in all vessel segments. Image quality of the proximal vessel segments, including the infrarenal aorta, iliac arteries, and common femoral artery, was significantly lower on QISS-MRA compared to CE-MRA [image quality score across readers: 2 (1,3) versus 1 (1,1) p < 0.001]. In the more distal vessel segments, image quality of QISS-MRA was excellent and showed no significant difference compared to CE-MRA [image quality score across readers: 1 (1,1) versus 1 (1,1) p = 0.036]. Diagnostic performance of QISS-MRA was as follows (across readers): sensitivity: 87.5% (95% CI: 80.2–92.4%); specificity: 96.1% (95% CI: 93.6–97.6%); diagnostic accuracy: 94.9% (95% CI: 92.6–96.5%). Conclusions: QISS-MRA of the lower extremities is feasible at 3 T and provides high image quality, especially in the distal vessel segments

  10. 2-D analytical modeling of subthreshold current and subthreshold swing for ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs

    Science.gov (United States)

    Goel, Ekta; Singh, Kunal; Singh, Balraj; Kumar, Sanjay; Jit, Satyabrata

    2017-09-01

    In this paper, the subthreshold behavior of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs has been analyzed by means of subthreshold current and subthreshold swing. The surface potential based formulation of subthreshold current and subthreshold swing is done by solving the 2-D Poisson's equations in the channel region using parabolic approximation method. The dependence of subthreshold characteristics on various device parameters such as gate length ratio, Ge mole fraction, peak doping concentration, projected range, straggle parameter etc. has been studied. The modeling results are found to be well matched with the simulation data obtained by a 2-D device simulator, ATLAS™, from SILVACO.

  11. Computational and Experimental Insight Into Single-Molecule Piezoelectric Materials

    Science.gov (United States)

    Marvin, Christopher Wayne

    Piezoelectric materials allow for the harvesting of ambient waste energy from the environment. Producing lightweight, highly responsive materials is a challenge for this type of material, requiring polymer, foam, or bio-inspired materials. In this dissertation, I explore the origin of the piezoelectric effect in single molecules through density functional theory (DFT), analyze the piezoresponse of bio-inspired peptidic materials through the use of atomic and piezoresponse force microscopy (AFM and PFM), and develop a novel class of materials combining flexible polyurethane foams and non-piezoelectric, polar dopants. For the DFT calculations, functional group, regiochemical, and heteroatom derivatives of [6]helicene were examined for their influence on the piezoelectric response. An aza[6]helicene derivative was found to have a piezoelectric response (108 pm/V) comparable to ceramics such as lead zirconium titanate (200+ pm/V). These computed materials have the possibility to compete with current field-leading piezomaterials such as lead zirconium titanate (PZT), zinc oxide (ZnO), and polyvinylidene difluoride (PVDF) and its derivatives. The use of AFM/PFM allows for the demonstration of the piezoelectric effect of the selfassembled monolayer (SAM) peptidic systems. Through PFM, the influence that the helicity and sequence of the peptide has on the overall response of the molecule can be analyzed. Finally, development of a novel class of piezoelectrics, the foam-based materials, expands the current understanding of the qualities required for a piezoelectric material from ceramic and rigid materials to more flexible, organic materials. Through the exploration of these novel types of piezoelectric materials, new design rules and figures of merit have been developed.

  12. Validation of the Gate simulation platform in single photon emission computed tomography and application to the development of a complete 3-dimensional reconstruction algorithm

    International Nuclear Information System (INIS)

    Lazaro, D.

    2003-10-01

    Monte Carlo simulations are currently considered in nuclear medical imaging as a powerful tool to design and optimize detection systems, and also to assess reconstruction algorithms and correction methods for degrading physical effects. Among the many simulators available, none of them is considered as a standard in nuclear medical imaging: this fact has motivated the development of a new generic Monte Carlo simulation platform (GATE), based on GEANT4 and dedicated to SPECT/PET (single photo emission computed tomography / positron emission tomography) applications. We participated during this thesis to the development of the GATE platform within an international collaboration. GATE was validated in SPECT by modeling two gamma cameras characterized by a different geometry, one dedicated to small animal imaging and the other used in a clinical context (Philips AXIS), and by comparing the results obtained with GATE simulations with experimental data. The simulation results reproduce accurately the measured performances of both gamma cameras. The GATE platform was then used to develop a new 3-dimensional reconstruction method: F3DMC (fully 3-dimension Monte-Carlo) which consists in computing with Monte Carlo simulation the transition matrix used in an iterative reconstruction algorithm (in this case, ML-EM), including within the transition matrix the main physical effects degrading the image formation process. The results obtained with the F3DMC method were compared to the results obtained with three other more conventional methods (FBP, MLEM, MLEMC) for different phantoms. The results of this study show that F3DMC allows to improve the reconstruction efficiency, the spatial resolution and the signal to noise ratio with a satisfactory quantification of the images. These results should be confirmed by performing clinical experiments and open the door to a unified reconstruction method, which could be applied in SPECT but also in PET. (author)

  13. Investigation of the Semicoa SCF9550 and the International Rectifier IRHM57260SE for Single-Event Gate Rapture and Single-Event Burnout : NASA Electronic Parts and Packaging (NEPP) Program Office of Safety and Mission Assurance

    Science.gov (United States)

    Scheick, Leif

    2011-01-01

    Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. TheSCF9550 from Semicoa and the IRHM57260SE from International Rectifier were tested to NASA test condition/standards and requirements.The IRHM57260SE performed much better when compared to previous testing. These initial results confirm that parts from the Temecula line are marginally comparable to the El Segundo line. The SCF9550 from Semicoa was also tested and represents the initial parts offering from this vendor. Both parts experienced single-event gate rupture (SEGR) and single-event burnout (SEB). All of the SEGR was from gate to drain.

  14. Simulation of 1.5-mm-thick and 15-cm-diameter gated silicon drift X-ray detector operated with a single high-voltage source

    Science.gov (United States)

    Matsuura, Hideharu

    2015-04-01

    High-resolution silicon X-ray detectors with a large active area are required for effectively detecting traces of hazardous elements in food and soil through the measurement of the energies and counts of X-ray fluorescence photons radially emitted from these elements. The thicknesses and areas of commercial silicon drift detectors (SDDs) are up to 0.5 mm and 1.5 cm2, respectively. We describe 1.5-mm-thick gated SDDs (GSDDs) that can detect photons with energies up to 50 keV. We simulated the electric potential distributions in GSDDs with a Si thickness of 1.5 mm and areas from 0.18 to 168 cm2 at a single high reverse bias. The area of a GSDD could be enlarged simply by increasing all the gate widths by the same multiple, and the capacitance of the GSDD remained small and its X-ray count rate remained high.

  15. Signatures of Mechanosensitive Gating.

    Science.gov (United States)

    Morris, Richard G

    2017-01-10

    The question of how mechanically gated membrane channels open and close is notoriously difficult to address, especially if the protein structure is not available. This perspective highlights the relevance of micropipette-aspirated single-particle tracking-used to obtain a channel's diffusion coefficient, D, as a function of applied membrane tension, σ-as an indirect assay for determining functional behavior in mechanosensitive channels. While ensuring that the protein remains integral to the membrane, such methods can be used to identify not only the gating mechanism of a protein, but also associated physical moduli, such as torsional and dilational rigidity, which correspond to the protein's effective shape change. As an example, three distinct D-versus-σ "signatures" are calculated, corresponding to gating by dilation, gating by tilt, and gating by a combination of both dilation and tilt. Both advantages and disadvantages of the approach are discussed. Copyright © 2017 Biophysical Society. Published by Elsevier Inc. All rights reserved.

  16. Piezophototronic Effect in Single-Atomic-Layer MoS 2 for Strain-Gated Flexible Optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Wenzhuo [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Wang, Lei [Department of Electrical Engineering, Columbia University, New York NY 10027 USA; Yu, Ruomeng [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Liu, Yuanyue [National Renewable Energy Laboratory (NREL), Golden CO 80401 USA; Wei, Su-Huai [National Renewable Energy Laboratory (NREL), Golden CO 80401 USA; Hone, James [Department of Mechanical Engineering, Columbia University, New York NY 10027 USA; Wang, Zhong Lin [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, 100083 Beijing China

    2016-08-03

    Strain-gated flexible optoelectronics are reported based on monolayer MoS2. Utilizing the piezoelectric polarization created at metal-MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.

  17. Retrospectively ECG-gated multi-detector row CT of the chest: does ECG-gating improve three-dimensional visualization of the bronchial tree?

    International Nuclear Information System (INIS)

    Schertler, T.; Wildermuth, S.; Willmann, J.K.; Crook, D.W.; Marincek, B.; Boehm, T.

    2004-01-01

    Purpose: To determine the impact of retrospectively ECG-gated multi-detector row CT (MDCT) on three-dimensional (3D) visualization of the bronchial tree and virtual bronchoscopy (VB) as compared to non-ECG-gated data acquisition. Materials and Methods: Contrast-enhanced retrospectively ECG-gated and non-ECG-gated MDCT of the chest was performed in 25 consecutive patients referred for assessment of coronary artery bypass grafts and pathology of the ascending aorta. ECG-gated MDCT data were reconstructed in diastole using an absolute reverse delay of -400 msec in all patients. In 10 patients additional reconstructions at -200 msec, -300 msec, and -500 msec prior to the R-wave were performed. Shaded surface display (SSD) and virtual bronchoscopy (VB) for visualization of the bronchial segments was performed with ECG-gated and non-ECG-gated MDCT data. The visualization of the bronchial tree underwent blinded scoring. Effective radiation dose and signal-to-noise ratio (SNR) for both techniques were compared. Results: There was no significant difference in visualizing single bronchial segments using ECG-gated compared to non-ECG-gated MDCT data. However, the total sum of scores for all bronchial segments visualized with non-ECG-gated MDCT was significantly higher compared to ECG-gated MDCT (P [de

  18. Improved Gate Dielectric Deposition and Enhanced Electrical Stability for Single-Layer MoS2 MOSFET with an AlN Interfacial Layer.

    Science.gov (United States)

    Qian, Qingkai; Li, Baikui; Hua, Mengyuan; Zhang, Zhaofu; Lan, Feifei; Xu, Yongkuan; Yan, Ruyue; Chen, Kevin J

    2016-06-09

    Transistors based on MoS2 and other TMDs have been widely studied. The dangling-bond free surface of MoS2 has made the deposition of high-quality high-k dielectrics on MoS2 a challenge. The resulted transistors often suffer from the threshold voltage instability induced by the high density traps near MoS2/dielectric interface or inside the gate dielectric, which is detrimental for the practical applications of MoS2 metal-oxide-semiconductor field-effect transistor (MOSFET). In this work, by using AlN deposited by plasma enhanced atomic layer deposition (PEALD) as an interfacial layer, top-gate dielectrics as thin as 6 nm for single-layer MoS2 transistors are demonstrated. The AlN interfacial layer not only promotes the conformal deposition of high-quality Al2O3 on the dangling-bond free MoS2, but also greatly enhances the electrical stability of the MoS2 transistors. Very small hysteresis (ΔVth) is observed even at large gate biases and high temperatures. The transistor also exhibits a low level of flicker noise, which clearly originates from the Hooge mobility fluctuation instead of the carrier number fluctuation. The observed superior electrical stability of MoS2 transistor is attributed to the low border trap density of the AlN interfacial layer, as well as the small gate leakage and high dielectric strength of AlN/Al2O3 dielectric stack.

  19. Low-power logic computing realized in a single electric-double-layer MoS2 transistor gated with polymer electrolyte

    Science.gov (United States)

    Guo, Junjie; Xie, Dingdong; Yang, Bingchu; Jiang, Jie

    2018-06-01

    Due to its mechanical flexibility, large bandgap and carrier mobility, atomically thin molybdenum disulphide (MoS2) has attracted widespread attention. However, it still lacks a facile route to fabricate a low-power high-performance logic gates/circuits before it gets the real application. Herein, we reported a facile and environment-friendly method to establish the low-power logic function in a single MoS2 field-effect transistor (FET) configuration gated with a polymer electrolyte. Such low-power and high-performance MoS2 FET can be implemented by using water-soluble polyvinyl alcohol (PVA) polymer as proton-conducting electric-double-layer (EDL) dielectric layer. It exhibited an ultra-low voltage (1.5 V) and a good performance with a high current on/off ratio (Ion/off) of 1 × 105, a large electron mobility (μ) of 47.5 cm2/V s, and a small subthreshold swing (S) of 0.26 V/dec, respectively. The inverter can be realized by using such a single MoS2 EDL FET with a gain of ∼4 at the operation voltage of only ∼1 V. Most importantly, the neuronal AND logic computing can be also demonstrated by using such a double-lateral-gate single MoS2 EDL transistor. These results show an effective step for future applications of 2D MoS2 FETs for integrated electronic engineering and low-energy environment-friendly green electronics.

  20. Picosecond time-resolved laser pump/X-ray probe experiments using a gated single-photon-counting area detector

    DEFF Research Database (Denmark)

    Ejdrup, T.; Lemke, H.T.; Haldrup, Martin Kristoffer

    2009-01-01

    The recent developments in X-ray detectors have opened new possibilities in the area of time-resolved pump/probe X-ray experiments; this article presents the novel use of a PILATUS detector to achieve X-ray pulse duration limited time-resolution at the Advanced Photon Source (APS), USA...... limited time-resolution of 60 ps using the gated PILATUS detector. This is the first demonstration of X-ray pulse duration limited data recorded using an area detector without the use of a mechanical chopper array at the beamline........ The capability of the gated PILATUS detector to selectively detect the signal from a given X-ray pulse in 24 bunch mode at the APS storage ring is demonstrated. A test experiment performed on polycrystalline organic thin films of [alpha]-perylene illustrates the possibility of reaching an X-ray pulse duration...

  1. Security and gain improvement of a practical quantum key distribution using a gated single-photon source and probabilistic photon-number resolution

    International Nuclear Information System (INIS)

    Horikiri, Tomoyuki; Sasaki, Hideki; Wang, Haibo; Kobayashi, Takayoshi

    2005-01-01

    We propose a high security quantum key distribution (QKD) scheme utilizing one mode of spontaneous parametric downconversion gated by a photon number resolving detector. This photon number measurement is possible by using single-photon detectors operating at room temperature and optical fibers. By post selection, the multiphoton probability in this scheme can be reduced to lower than that of a scheme using an attenuated coherent light resulting in improvement of security. Furthermore, if distillation protocol (error correction and privacy amplification) is performed, the gain will be increased. Hence a QKD system with higher security and bit rate than the laser-based QKD system can be attained using present available technologies

  2. Ab-initio quantum transport simulation of self-heating in single-layer 2-D materials

    Science.gov (United States)

    Stieger, Christian; Szabo, Aron; Bunjaku, Teutë; Luisier, Mathieu

    2017-07-01

    Through advanced quantum mechanical simulations combining electron transport and phonon transport from first-principles, self-heating effects are investigated in n-type transistors with single-layer MoS2, WS2, and black phosphorus as channel materials. The selected 2-D crystals all exhibit different phonon-limited mobility values, as well as electron and phonon properties, which have a direct influence on the increase in their lattice temperature and on the power dissipated inside their channel as a function of the applied gate voltage and electrical current magnitude. This computational study reveals (i) that self-heating plays a much more important role in 2-D materials than in Si nanowires, (ii) that it could severely limit the performance of 2-D devices at high current densities, and (iii) that black phosphorus appears less sensitive to this phenomenon than transition metal dichalcogenides.

  3. Purity Evaluation of Bulk Single Wall Carbon Nanotube Materials

    International Nuclear Information System (INIS)

    Dettlaff-Weglikowska, U.; Hornbostel, B.; Cech, J.; Roth, S.; Wang, J.; Liang, J.

    2005-01-01

    We report on our experience using a preliminary protocol for quality control of bulk single wall carbon nanotube (SWNT) materials produced by the electric arc-discharge and laser ablation method. The first step in the characterization of the bulk material is mechanical homogenization. Quantitative evaluation of purity has been performed using a previously reported procedure based on solution phase near-infrared spectroscopy. Our results confirm that this method is reliable in determining the nanotube content in the arc-discharge sample containing carbonaceous impurities (amorphous carbon and graphitic particles). However, the application of this method to laser ablation samples gives a relative purity value over 100 %. The possible reason for that might be different extinction coefficient meaning different oscillator strength of the laser ablation tubes. At the present time, a 100 % pure reference sample of laser ablation SWNT is not available, so we chose to adopt the sample showing the highest purity as a new reference sample for a quantitative purity evaluation of laser ablation materials. The graphitic part of the carbonaceous impurities has been estimated using X-ray diffraction of 1:1 mixture of nanotube material and C60 as an internal reference. To evaluate the metallic impurities in the as prepared and homogenized carbon nanotube soot inductive coupled plasma (ICP) has been used

  4. Tunnel field-effect transistor with two gated intrinsic regions

    Directory of Open Access Journals (Sweden)

    Y. Zhang

    2014-07-01

    Full Text Available In this paper, we propose and validate (using simulations a novel design of silicon tunnel field-effect transistor (TFET, based on a reverse-biased p+-p-n-n+ structure. 2D device simulation results show that our devices have significant improvements of switching performance compared with more conventional devices based on p-i-n structure. With independent gate voltages applied to two gated intrinsic regions, band-to-band tunneling (BTBT could take place at the p-n junction, and no abrupt degenerate doping profile is required. We developed single-side-gate (SSG structure and double-side-gate (DSG structure. SSG devices with HfO2 gate dielectric have a point subthreshold swing of 9.58 mV/decade, while DSG devices with polysilicon gate electrode material and HfO2 gate dielectric have a point subthreshold swing of 16.39 mV/decade. These DSG devices have ON-current of 0.255 μA/μm, while that is lower for SSG devices. Having two nano-scale independent gates will be quite challenging to realize with good uniformity across the wafer and the improved behavior of our TFET makes it a promising steep-slope switch candidate for further investigations.

  5. Upgrading the Center for Lightweighting Automotive Materials and Processing - a GATE Center of Excellence at the University of Michigan-Dearborn

    Energy Technology Data Exchange (ETDEWEB)

    Mallick, P. K.

    2012-08-30

    The Center for Lightweighting Materials and Processing (CLAMP) was established in September 1998 with a grant from the Department of Energy’s Graduate Automotive Technology Education (GATE) program. The center received the second round of GATE grant in 2005 under the title “Upgrading the Center for Lightweighting Automotive Materials and Processing”. Using the two grants, the Center has successfully created 10 graduate level courses on lightweight automotive materials, integrated them into master’s and PhD programs in Automotive Systems Engineering, and offered them regularly to the graduate students in the program. In addition, the Center has created a web-based lightweight automotive materials database, conducted research on lightweight automotive materials and organized seminars/symposia on lightweight automotive materials for both academia and industry. The faculty involved with the Center has conducted research on a variety of topics related to design, testing, characterization and processing of lightweight materials for automotive applications and have received numerous research grants from automotive companies and government agencies to support their research. The materials considered included advanced steels, light alloys (aluminum, magnesium and titanium) and fiber reinforced polymer composites. In some of these research projects, CLAMP faculty have collaborated with industry partners and students have used the research facilities at industry locations. The specific objectives of the project during the current funding period (2005 – 2012) were as follows: (1) develop new graduate courses and incorporate them in the automotive systems engineering curriculum (2) improve and update two existing courses on automotive materials and processing (3) upgrade the laboratory facilities used by graduate students to conduct research (4) expand the Lightweight Automotive Materials Database to include additional materials, design case studies and make it more

  6. Linear gate

    International Nuclear Information System (INIS)

    Suwono.

    1978-01-01

    A linear gate providing a variable gate duration from 0,40μsec to 4μsec was developed. The electronic circuity consists of a linear circuit and an enable circuit. The input signal can be either unipolar or bipolar. If the input signal is bipolar, the negative portion will be filtered. The operation of the linear gate is controlled by the application of a positive enable pulse. (author)

  7. Spin magneto-transport in a Rashba-Dresselhaus quantum channel with single and double finger gates

    Science.gov (United States)

    Tang, Chi-Shung; Keng, Jia-An; Abdullah, Nzar Rauf; Gudmundsson, Vidar

    2017-05-01

    We address spin-resolved electronic transport properties in a Rashba-Dresselhaus quantum channel in the presence of an in-plane magnetic field. The strong Rashba-Dresselhaus effect induces an asymmetric spin-splitting energy spectrum with a spin-orbit-Zeeman gap. This asymmetric fact in energy spectrum may result in various quantum dynamic features in conductance due to the presence of finger gates. This asymmetric spin-splitting energy spectrum results in a bound state in continuum for electrons within ultralow energy regime with binding energies in order of 10-1 meV.

  8. Long-range protein electron transfer observed at the single-molecule level: In situ mapping of redox-gated tunneling resonance

    DEFF Research Database (Denmark)

    Chi, Qijin; Farver, O; Ulstrup, Jens

    2005-01-01

    on the redox potential. Maximum resonance appears around the equilibrium redox potential of azurin with an on/off current ratio of approximate to 9. Simulation analyses, based on a two-step interfacial ET model for the scanning tunneling microscopy redox process, were performed and provide quantitative......A biomimetic long-range electron transfer (ET) system consisting of the blue copper protein azurin, a tunneling barrier bridge, and a gold single-crystal electrode was designed on the basis of molecular wiring self-assembly principles. This system is sufficiently stable and sensitive in a quasi...... constants display tunneling features with distance-decay factors of 0.83 and 0.91 angstrom(-1) in H2O and D2O, respectively. Redox-gated tunneling resonance is observed in situ at the single-molecule level by using electrochemical scanning tunneling microscopy, exhibiting an asymmetric dependence...

  9. A two-dimensional (2D) analytical subthreshold swing and transconductance model of underlap dual-material double-gate (DMDG) MOSFET for analog/RF applications

    Science.gov (United States)

    Narendar, Vadthiya; Rai, Saurabh; Tiwari, Siddharth; Mishra, R. A.

    2016-12-01

    The double-gate (DG) metal-oxide-semiconductor field effect transistors (MOSFETs) are the choice of technology in sub -100 nm regime of leading microelectronics industry. To enhance the analog and RF performance of DG MOSFET, an underlap dual-material (DM) DG MOSFET device structure has been considered because, it has the advantages of both underlap as well as that of dual-material gate (DMG). A 2D analytical surface potential, subthreshold current, subthreshold swing as well as transconductance modelling of underlap DMDG MOSFET has been done by solving the Poisson's equation. It has also been found that, numerically simulated data approves the analytically modelled data with commendable accuracy. As underlap length (Lun) increases, a substantial reduction of subthreshold current due to enhanced gate control over channel regime is observed. DMG structure facilitates to improve the average velocity of carriers which leads to superior drive current of the device. The underlap DMDG MOSFET device structure demonstrates an ameliorated subthreshold characteristic. The analog figure of merits (FOMs) such as transconductance (gm), transconductance generation factor (TGF), output conductance (gd), early voltage (VEA), intrinsic gain (AV) and RF FOMs namely cut-off frequency (fT), gain frequency product (GFP), transconductance frequency product (TFP) and gain transconductance frequency product (GTFP) have been evaluated. The aforesaid analysis revels that, the device is best suited for communication related Analog/RF applications.

  10. Novel technique of source and drain engineering for dual-material double-gate (DMDG) SOI MOSFETS

    Science.gov (United States)

    Yadav, Himanshu; Malviya, Abhishek Kumar; Chauhan, R. K.

    2018-04-01

    The dual-metal dual-gate (DMDG) SOI has been used with Dual Sided Source and Drain Engineered 50nm SOI MOSFET with various high-k gate oxide. It has been scrutinized in this work to enhance its electrical performance. The proposed structure is designed by creating Dual Sided Source and Drain Modification and its characteristics are evaluated on ATLAS device simulator. The consequence of this dual sided assorted doping on source and drain side of the DMDG transistor has better leakage current immunity and heightened ION current with higher ION to IOFF Ratio. Which thereby vesting the proposed device appropriate for low power digital applications.

  11. Simultaneous control of thermoelectric properties in p- and n-type materials by electric double-layer gating: New design for thermoelectric device

    Science.gov (United States)

    Takayanagi, Ryohei; Fujii, Takenori; Asamitsu, Atsushi

    2015-05-01

    We report a novel design of a thermoelectric device that can control the thermoelectric properties of p- and n-type materials simultaneously by electric double-layer gating. Here, p-type Cu2O and n-type ZnO were used as the positive and negative electrodes of the electric double-layer capacitor structure. When a gate voltage was applied between the two electrodes, holes and electrons accumulated on the surfaces of Cu2O and ZnO, respectively. The thermopower was measured by applying a thermal gradient along the accumulated layer on the electrodes. We demonstrate here that the accumulated layers worked as a p-n pair of the thermoelectric device.

  12. Simulation of planar single-gate Si tunnel FET with average subthreshold swing of less than 60 mV/decade for 0.3 V operation

    Science.gov (United States)

    Kukita, Kentaro; Uechi, Tadayoshi; Shimokawa, Junji; Goto, Masakazu; Yokota, Yoshinori; Kawanaka, Shigeru; Tanamoto, Tetsufumi; Tanimoto, Hiroyoshi; Takagi, Shinichi

    2018-04-01

    Planar single-gate (SG) silicon (Si) tunnel field effect transistors (TFETs) are attracting interest for ultra-low voltage operation and CMOS applications. For the achievement of subthreshold swing (S.S.) less than thermal limit of Si MOSFETs (S.S. = 60 mV/decade at 300 K), previous studies have proposed the formation of a pocket region, which needs very difficult implantation process. In this work, a planar SG Si TFET without pocket was proposed by using the technology computer-aided design (TCAD) simulations. An average S.S. of less than 60 mV/decade for 0.3 V (= V gs = V ds) operation was obtained. It is found that both low average S.S. (= 27.8 mV/decade) and high on-current I on (= 3.8 µA/µm) are achieved without pocket doping by scaling the equivalent oxide thickness (EOT) and increasing the gate-to-source overlap length L ov.

  13. Contact effects analyzed by a parameter extraction method based on a single bottom-gate/top-contact organic thin-film transistor

    Science.gov (United States)

    Takagaki, Shunsuke; Yamada, Hirofumi; Noda, Kei

    2018-03-01

    Contact effects in organic thin-film transistors (OTFTs) were examined by using our previously proposed parameter extraction method from the electrical characteristics of a single staggered-type device. Gate-voltage-dependent contact resistance and channel mobility in the linear regime were evaluated for bottom-gate/top-contact (BGTC) pentacene TFTs with active layers of different thicknesses, and for pentacene TFTs with contact-doped layers prepared by coevaporation of pentacene and tetrafluorotetracyanoquinodimethane (F4TCNQ). The extracted parameters suggested that the influence of the contact resistance becomes more prominent with the larger active-layer thickness, and that contact-doping experiments give rise to a drastic decrease in the contact resistance and a concurrent considerable improvement in the channel mobility. Additionally, the estimated energy distributions of trap density in the transistor channel probably reflect the trap filling with charge carriers injected into the channel regions. The analysis results in this study confirm the effectiveness of our proposed method, with which we can investigate contact effects and circumvent the influences of characteristic variations in OTFT fabrication.

  14. Bubble gate for in-plane flow control.

    Science.gov (United States)

    Oskooei, Ali; Abolhasani, Milad; Günther, Axel

    2013-07-07

    We introduce a miniature gate valve as a readily implementable strategy for actively controlling the flow of liquids on-chip, within a footprint of less than one square millimetre. Bubble gates provide for simple, consistent and scalable control of liquid flow in microchannel networks, are compatible with different bulk microfabrication processes and substrate materials, and require neither electrodes nor moving parts. A bubble gate consists of two microchannel sections: a liquid-filled channel and a gas channel that intercepts the liquid channel to form a T-junction. The open or closed state of a bubble gate is determined by selecting between two distinct gas pressure levels: the lower level corresponds to the "open" state while the higher level corresponds to the "closed" state. During closure, a gas bubble penetrates from the gas channel into the liquid, flanked by a column of equidistantly spaced micropillars on each side, until the flow of liquid is completely obstructed. We fabricated bubble gates using single-layer soft lithographic and bulk silicon micromachining procedures and evaluated their performance with a combination of theory and experimentation. We assessed the dynamic behaviour during more than 300 open-and-close cycles and report the operating pressure envelope for different bubble gate configurations and for the working fluids: de-ionized water, ethanol and a biological buffer. We obtained excellent agreement between the experimentally determined bubble gate operational envelope and a theoretical prediction based on static wetting behaviour. We report case studies that serve to illustrate the utility of bubble gates for liquid sampling in single and multi-layer microfluidic devices. Scalability of our strategy was demonstrated by simultaneously addressing 128 bubble gates.

  15. Low-voltage organic field-effect transistors based on novel high-κ organometallic lanthanide complex for gate insulating materials

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Qi; Li, Yi; Zhang, Yang; Song, You, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Wang, Xizhang, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Hu, Zheng [Key Laboratory of Mesoscopic Chemistry of MOE, Jiangsu Provincial Lab for Nanotechnology, School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210093, China. High-Tech Research Institute of Nanjing University (Suzhou), Suzhou 215123 (China); Sun, Huabin; Li, Yun, E-mail: wangxzh@nju.edu.cn, E-mail: yli@nju.edu.cn, E-mail: yousong@nju.edu.cn; Shi, Yi [School of Electronic Science and Engineering and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093 (China)

    2014-08-15

    A novel high-κ organometallic lanthanide complex, Eu(tta){sub 3}L (tta=2-thenoyltrifluoroacetonate, L = 4,5-pinene bipyridine), is used as gate insulating material to fabricate low-voltage pentacene field-effect transistors (FETs). The optimized gate insulator exhibits the excellent properties such as low leakage current density, low surface roughness, and high dielectric constant. When operated under a low voltage of −5 V, the pentacene FET devices show the attractive electrical performance, e.g. carrier mobility (μ{sub FET}) of 0.17 cm{sup 2} V{sup −1} s{sup −1}, threshold voltage (V{sub th}) of −0.9 V, on/off current ratio of 5 × 10{sup 3}, and subthreshold slope (SS) of 1.0 V dec{sup −1}, which is much better than that of devices obtained on conventional 300 nm SiO{sub 2} substrate (0.13 cm{sup 2} V{sup −1} s{sup −1}, −7.3 V and 3.1 V dec{sup −1} for μ{sub FET}, V{sub th} and SS value when operated at −30 V). These results indicate that this kind of high-κ organometallic lanthanide complex becomes a promising candidate as gate insulator for low-voltage organic FETs.

  16. Low-voltage organic field-effect transistors based on novel high-κ organometallic lanthanide complex for gate insulating materials

    Directory of Open Access Journals (Sweden)

    Qi Liu

    2014-08-01

    Full Text Available A novel high-κ organometallic lanthanide complex, Eu(tta3L (tta=2-thenoyltrifluoroacetonate, L = 4,5-pinene bipyridine, is used as gate insulating material to fabricate low-voltage pentacene field-effect transistors (FETs. The optimized gate insulator exhibits the excellent properties such as low leakage current density, low surface roughness, and high dielectric constant. When operated under a low voltage of −5 V, the pentacene FET devices show the attractive electrical performance, e.g. carrier mobility (μFET of 0.17 cm2 V−1 s−1, threshold voltage (Vth of −0.9 V, on/off current ratio of 5 × 103, and subthreshold slope (SS of 1.0 V dec−1, which is much better than that of devices obtained on conventional 300 nm SiO2 substrate (0.13 cm2 V−1 s−1, −7.3 V and 3.1 V dec−1 for μFET, Vth and SS value when operated at −30 V. These results indicate that this kind of high-κ organometallic lanthanide complex becomes a promising candidate as gate insulator for low-voltage organic FETs.

  17. Infrared laser dissociation of single megadalton polymer ions in a gated electrostatic ion trap: the added value of statistical analysis of individual events.

    Science.gov (United States)

    Halim, Mohammad A; Clavier, Christian; Dagany, Xavier; Kerleroux, Michel; Dugourd, Philippe; Dunbar, Robert C; Antoine, Rodolphe

    2018-05-07

    In this study, we report the unimolecular dissociation mechanism of megadalton SO 3 -containing poly(2-acrylamido-2-methyl-1-propanesulfonic acid) (PAMPS) polymer cations and anions with the aid of infrared multiphoton dissociation coupled to charge detection ion trap mass spectrometry. A gated electrostatic ion trap ("Benner trap") is used to store and detect single gaseous polymer ions generated by positive and negative polarity in an electrospray ionization source. The trapped ions are then fragmented due to the sequential absorption of multiple infrared photons produced from a continuous-wave CO 2 laser. Several fragmentation pathways having distinct signatures are observed. Highly charged parent ions characteristically adopt a distinctive "stair-case" pattern (assigned to the "fission" process) whereas low charge species take on a "funnel like" shape (assigned to the "evaporation" process). Also, the log-log plot of the dissociation rate constants as a function of laser intensity between PAMPS positive and negative ions is significantly different.

  18. Characterization of a time-resolved non-contact scanning diffuse optical imaging system exploiting fast-gated single-photon avalanche diode detection

    Energy Technology Data Exchange (ETDEWEB)

    Di Sieno, Laura, E-mail: laura.disieno@polimi.it; Dalla Mora, Alberto; Contini, Davide [Politecnico di Milano, Dipartimento di Fisica, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Wabnitz, Heidrun; Macdonald, Rainer [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Pifferi, Antonio [Politecnico di Milano, Dipartimento di Fisica, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Mazurenka, Mikhail [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Hannoversches Zentrum für Optische Technologien, Nienburger Str. 17, 30167 Hannover (Germany); Hoshi, Yoko [Department of Biomedical Optics, Medical Photonics Research Center, Hamamatsu University School of Medicine, Hamamatsu 431-3192 (Japan); Boso, Gianluca; Tosi, Alberto [Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Becker, Wolfgang [Becker and Hickl GmbH, Nahmitzer Damm 30, 12277 Berlin (Germany); Martelli, Fabrizio [Dipartimento di Fisica e Astronomia dell’Università degli Studi di Firenze, Via G. Sansone 1, Sesto Fiorentino, Firenze 50019 (Italy)

    2016-03-15

    We present a system for non-contact time-resolved diffuse reflectance imaging, based on small source-detector distance and high dynamic range measurements utilizing a fast-gated single-photon avalanche diode. The system is suitable for imaging of diffusive media without any contact with the sample and with a spatial resolution of about 1 cm at 1 cm depth. In order to objectively assess its performances, we adopted two standardized protocols developed for time-domain brain imagers. The related tests included the recording of the instrument response function of the setup and the responsivity of its detection system. Moreover, by using liquid turbid phantoms with absorbing inclusions, depth-dependent contrast and contrast-to-noise ratio as well as lateral spatial resolution were measured. To illustrate the potentialities of the novel approach, the characteristics of the non-contact system are discussed and compared to those of a fiber-based brain imager.

  19. Characterization of a time-resolved non-contact scanning diffuse optical imaging system exploiting fast-gated single-photon avalanche diode detection

    International Nuclear Information System (INIS)

    Di Sieno, Laura; Dalla Mora, Alberto; Contini, Davide; Wabnitz, Heidrun; Macdonald, Rainer; Pifferi, Antonio; Mazurenka, Mikhail; Hoshi, Yoko; Boso, Gianluca; Tosi, Alberto; Becker, Wolfgang; Martelli, Fabrizio

    2016-01-01

    We present a system for non-contact time-resolved diffuse reflectance imaging, based on small source-detector distance and high dynamic range measurements utilizing a fast-gated single-photon avalanche diode. The system is suitable for imaging of diffusive media without any contact with the sample and with a spatial resolution of about 1 cm at 1 cm depth. In order to objectively assess its performances, we adopted two standardized protocols developed for time-domain brain imagers. The related tests included the recording of the instrument response function of the setup and the responsivity of its detection system. Moreover, by using liquid turbid phantoms with absorbing inclusions, depth-dependent contrast and contrast-to-noise ratio as well as lateral spatial resolution were measured. To illustrate the potentialities of the novel approach, the characteristics of the non-contact system are discussed and compared to those of a fiber-based brain imager.

  20. Multi-valued logic circuits using hybrid circuit consisting of three gates single-electron transistors (TG-SETs) and MOSFETs.

    Science.gov (United States)

    Shin, SeungJun; Yu, YunSeop; Choi, JungBum

    2008-10-01

    New multi-valued logic (MVL) families using the hybrid circuits consisting of three gates single-electron transistors (TG-SETs) and a metal-oxide-semiconductor field-effect transistor (MOSFET) are proposed. The use of SETs offers periodic literal characteristics due to Coulomb oscillation of SET, which allows a realization of binary logic (BL) circuits as well as multi-valued logic (MVL) circuits. The basic operations of the proposed MVL families are successfully confirmed through SPICE circuit simulation based on the physical device model of a TG-SET. The proposed MVL circuits are found to be much faster, but much larger power consumption than a previously reported MVL, and they have a trade-off between speed and power consumption. As an example to apply the newly developed MVL families, a half-adder is introduced.

  1. Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

    Science.gov (United States)

    Perkins, Charles M.; Triplett, Baylor B.; McIntyre, Paul C.; Saraswat, Krishna C.; Haukka, Suvi; Tuominen, Marko

    2001-04-01

    Structural and electrical properties of gate stack structures containing ZrO2 dielectrics were investigated. The ZrO2 films were deposited by atomic layer chemical vapor deposition (ALCVD) after different substrate preparations. The structure, composition, and interfacial characteristics of these gate stacks were examined using cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy. The ZrO2 films were polycrystalline with either a cubic or tetragonal crystal structure. An amorphous interfacial layer with a moderate dielectric constant formed between the ZrO2 layer and the substrate during ALCVD growth on chemical oxide-terminated silicon. Gate stacks with a measured equivalent oxide thickness (EOT) of 1.3 nm showed leakage values of 10-5 A/cm2 at a bias of -1 V from flatband, which is significantly less than that seen with SiO2 dielectrics of similar EOT. A hysteresis of 8-10 mV was seen for ±2 V sweeps while a midgap interface state density (Dit) of ˜3×1011 states/cm eV was determined from comparisons of measured and ideal capacitance curves.

  2. Assessment of ischemic heart disease by dipyridamole stress electrocardiographic gated myocardial single photon emission computed tomography with technetium-99m tetrofosmin

    International Nuclear Information System (INIS)

    Kanna, Masahiko; Mitani, Isao; Nakamaru, Masashi; Shibuya, Ken; Takeda, Kazuyoshi; Asahina, Shigeru; Kitamura, Yutaka; Higuma, Kikuhiko; Ishii, Masao

    1998-01-01

    Simultaneous assessment of stress perfusion and rest function is possible with gated single photon emission computed tomography (SPECT) using stress injected technetium-99m ( 99m Tc) tetrofosmin (TF). The feasibility of dipyridamole stress electrocardiographic gated myocardial SPECT (GSPECT) with TF was examined as an alternative to conventional stress/rest imaging. Fifty-one patients underwent stress GSPECT. 740 MBq of TF was administered 3 min after dipyridamole infusion. GSPECT acquisition was performed one hour after the injection. Additional rest SPECT was performed on another day only in patients with abnormal perfusion on stress images. Perfusion and thickening were analyzed visually on 17 segments of the left ventricle. Percentage of wall thickening (%WT) was also calculated in 17 segments of the polar map. Thirty-two of 51 patients (63%) had normal stress perfusion and normal rest thickening. Nineteen of 51 patients (37%) had abnormal perfusion on stress images. Among 157 abnormal perfusion segments of the 19 patients, 139 segments (89%) had thickening and the rest (11%) had no thickening. %WT was higher in the reversible segments with or without thickening. There was better agreement for the identification of normal segments and the presence of reversibility between stress GSPECT and the conventional stress/rest study in patients without previous myocardial infarction than in those with previous myocardial infarction (89% vs 79%). These results suggest that stress GSPECT may substitute for conventional stress/rest perfusion study in patients without previous myocardial infarction, allowing shorter examination time and lower cost. However, stress GSPECT does not replace the need for rest perfusion study in patients with previous myocardial infarction, because of underestimation of viability, but %WT may eliminate this underestimation. (author)

  3. Assessment of prognostic value of semiquantitative parameters on gated single photon emission computed tomography myocardial perfusion scintigraphy in a large middle eastern population

    International Nuclear Information System (INIS)

    Chavoshi, Maryam; Fard-Esfahani, Armaghan; Fallahi, Babak; Emami-Ardekani, Alireza; Beiki, Davood; Hassanzadeh-Rad, Arman; Eftekhari, Mohammad

    2005-01-01

    Coronary artery disease is the leading cause of mortality worldwide. The goal of this study is to determine the prognostic value of semiquantitative parameters of electrocardiogram-gated single photon emission computed tomography (SPECT) myocardial perfusion imaging (MPI) in a large Middle Eastern (Iranian) population. This study was a prospective study including all patients referred to our center for myocardial perfusion scan. The patients were followed annually up to 24 months and their survival information was collected. From 1148 patients, 473 (41.2%) men and 675 (58.8%) women, 40.6% had normal MPI, 13.3% near normal and 46.1% abnormal MPI. After follow-up of 929 patients, 97.4% of patients were alive, and 2.6% succumbed to cardiac deaths. Abnormal ejection fraction was related with cardiac events (P = 0.001), but neither transient ischemic dilation (TID) (P = 0.09) nor lung/heart ratio (P = 0.92) showed such relationship. Association between summed difference score (SDS) and soft cardiac events (P < 0.001) was significant. Summed motion score (SMS) and summed thickening score (STS) showed a significant relation with hard cardiac events, including myocardial infarction and cardiac death (P < 0.001 and P = 0.001, respectively). Totally, risk of all cardiac events was significantly higher in abnormal MPI group than normal group (P < 0.001, 0.02, and 0.025, respectively). No significant relationship was found between TID and total cardiac events (P = 0.478). Semiquantitative variables derived from gated SPECT MPI have independent prognostic value. Rate of total cardiac events is higher in patients with higher summed stress score and SDS. Total and hard cardiac events are higher in upper scores of functional parameters (SMS and STS). Total cardiac events are higher in patients with lower left ventricular ejection fraction

  4. Gated 99mTc-MIBI single-photon emission computed tomography for the evaluation of left ventricular ejection fraction. Comparison with three-dimensional echocardiography

    International Nuclear Information System (INIS)

    Lipiec, P.; Wejner-Mik, P.; Krzeminska-Pakula, M.; Kapusta, A.; Kasprzak, J.D.; Kusmierek, J.; Plachcinska, A.; Szuminski, R.

    2008-01-01

    Parameters of left ventricular systolic function directly influence the management of patients with suspected coronary artery disease (CAD). Quantitative gated single-photon emission computed tomography (QGS; Cedars-Sinai Medical Center, Los Angeles, CA, USA) allows the computation of left ventricular ejection fraction (LVEF) from myocardial perfusion imaging studies which are frequently performed on patients with suspected CAD. Three-dimensional (3D) echocardiography is considered to be the echocardiographic ''gold standard'' for the quantification of LVEF. We sought to compare QGS with 3D echocardiography in the evaluation of EF in patients with suspected CAD. Ninety-one consecutive patients with suspected CAD, scheduled for coronary angiography, underwent rest electrocardiographic-gated technetium-99m methoxyisobutylisonitrile SPECT (G-SPECT) with measurement of LVEF by QGS and transthoracic 3D echocardiography with off-line measurement of LVEF (Tomtec 4D LV Analysis 1.1). The diagnosis of CAD was based on coronary angiography, performed on every patient. Nine patients were excluded from the analysis owing to unsuitability for 3D echocardiography (8 patients) or G-SPECT (1 patient). In the remaining group of 82 patients, 71 (87%) had significant CAD, 34 (42%) had a history of myocardial infarction, and 50 (61%) had perfusion defects at rest G-SPECT images. The mean LVEF measured by QGS and 3D echocardiography was 53±13% and 53±10%, respectively. The mean difference in LVEF between 3D echocardiography and QGS was 0.1±6.0% (P=0.87), and the correlation between the values obtained by both methods was high (r=0.88, P< 0.001). The largest discrepancies were observed in patients with small ventricular volumes. In patients undergoing diagnostic work-up for CAD, the measurement of LVEF by QGS algorithm provides high correlation and satisfactory agreement with the results of reference ultrasound method- 3D echocardiography. (author)

  5. A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

    International Nuclear Information System (INIS)

    Tripathi Shweta

    2014-01-01

    An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain (DMG-LDD) metal—oxide—semiconductor field-effect transistor (MOSFET) is presented using the parabolic approximation method. The proposed model takes into account the effects of the LDD region length, the LDD region doping, the lengths of the gate materials and their respective work functions, along with all the major geometrical parameters of the MOSFET. The impact of the LDD region length, the LDD region doping, and the channel length on the channel potential is studied in detail. Furthermore, the threshold voltage of the device is calculated using the minimum middle channel potential, and the result obtained is compared with the DMG MOSFET threshold voltage to show the improvement in the threshold voltage roll-off. It is shown that the DMG-LDD MOSFET structure alleviates the problem of short channel effects (SCEs) and the drain induced barrier lowering (DIBL) more efficiently. The proposed model is verified by comparing the theoretical results with the simulated data obtained by using the commercially available ATLAS™ 2D device simulator. (interdisciplinary physics and related areas of science and technology)

  6. A two-dimensional analytical model for channel potential and threshold voltage of short channel dual material gate lightly doped drain MOSFET

    Science.gov (United States)

    Shweta, Tripathi

    2014-11-01

    An analytical model for the channel potential and the threshold voltage of the short channel dual-material-gate lightly doped drain (DMG-LDD) metal—oxide—semiconductor field-effect transistor (MOSFET) is presented using the parabolic approximation method. The proposed model takes into account the effects of the LDD region length, the LDD region doping, the lengths of the gate materials and their respective work functions, along with all the major geometrical parameters of the MOSFET. The impact of the LDD region length, the LDD region doping, and the channel length on the channel potential is studied in detail. Furthermore, the threshold voltage of the device is calculated using the minimum middle channel potential, and the result obtained is compared with the DMG MOSFET threshold voltage to show the improvement in the threshold voltage roll-off. It is shown that the DMG-LDD MOSFET structure alleviates the problem of short channel effects (SCEs) and the drain induced barrier lowering (DIBL) more efficiently. The proposed model is verified by comparing the theoretical results with the simulated data obtained by using the commercially available ATLAS™ 2D device simulator.

  7. Amplifying genetic logic gates.

    Science.gov (United States)

    Bonnet, Jerome; Yin, Peter; Ortiz, Monica E; Subsoontorn, Pakpoom; Endy, Drew

    2013-05-03

    Organisms must process information encoded via developmental and environmental signals to survive and reproduce. Researchers have also engineered synthetic genetic logic to realize simpler, independent control of biological processes. We developed a three-terminal device architecture, termed the transcriptor, that uses bacteriophage serine integrases to control the flow of RNA polymerase along DNA. Integrase-mediated inversion or deletion of DNA encoding transcription terminators or a promoter modulates transcription rates. We realized permanent amplifying AND, NAND, OR, XOR, NOR, and XNOR gates actuated across common control signal ranges and sequential logic supporting autonomous cell-cell communication of DNA encoding distinct logic-gate states. The single-layer digital logic architecture developed here enables engineering of amplifying logic gates to control transcription rates within and across diverse organisms.

  8. Electrocardiographic-gated dual-isotope simultaneous acquisition SPECT using 18F-FDG and 99mTc-sestamibi to assess myocardial viability and function in a single study

    International Nuclear Information System (INIS)

    Matsunari, Ichiro; Matsudaira, Masamichi; Hisada, Kinichi; Kanayama, Sugako; Yoneyama, Tatsuya; Nakajima, Kenichi; Taki, Junichi; Tonami, Norihisa; Nekolla, Stephan G.

    2005-01-01

    Dual-isotope simultaneous acquisition single-photon emission computed tomography (DISA SPECT) with 18 F-fluorodeoxyglucose (FDG) and 99m Tc-sestamibi appears attractive for the detection of viable myocardium because it permits simultaneous assessment of glucose utilisation and perfusion. Another potential benefit of this approach is that the measurement of left ventricular (LV) function may be possible by ECG gating. The aim of this study was to test the hypothesis that both myocardial viability and LV function can be assessed by a single ECG-gated 18 F-FDG/ 99m Tc-sestamibi DISA SPECT study, based on comparison with 18 F-FDG/ 13 N-ammonia positron emission tomography (PET) and magnetic resonance imaging (MRI) as reference techniques. Thirty-three patients with prior myocardial infarction underwent ECG-gated 18 F-FDG/ 99m Tc-sestamibi DISA SPECT and 18 F-FDG/ 13 N-ammonia PET on a single day. Of these, 25 patients also underwent cine-MRI to assess LV function. The LV myocardium was divided into nine regions, and each region was classified as viable or scar using a semiquantitative visual scoring system as well as quantitative analysis. The global and regional LV function measured by gated SPECT was compared with the results of MRI. There was good agreement in respect of viability (90-96%, κ0.74-0.85) between DISA SPECT and PET by either visual or quantitative analysis. Furthermore, although both global and regional LV function measured by gated SPECT agreed with those by MRI, 99m Tc-sestamibi showed a closer correlation with MRI than did 18 F-FDG. In conclusion, ECG-gated DISA SPECT provides information on myocardial viability, as well as global and regional LV function, similar to that obtained by PET and MRI. (orig.)

  9. Incremental value of regional wall motion analysis immediately after exercise for the detection of single-vessel coronary artery disease. Study by separate acquisition, dual-isotope ECG-gated single-photon emission computed tomography

    International Nuclear Information System (INIS)

    Yoda, Shunichi; Sato, Yuichi; Matsumoto, Naoya; Tani, Shigemasa; Takayama, Tadateru; Uchiyama, Takahisa; Saito, Satoshi

    2005-01-01

    Although the detection of wall motion abnormalities gives incremental value to myocardial perfusion single-photon emission computed tomography (SPECT) in the diagnosis of extensive coronary artery disease (CAD) and high-grade single-vessel CAD, whether or not it is useful in the diagnosis of mild, single-vessel CAD has not been studied previously. Separate acquisition, dual isotope electrocardiogram (ECG)-gated SPECT was performed in 97 patients with a low likelihood of CAD (Group 1) and 46 patients with single-vessel CAD (Group 2). Mild CAD was defined by stenosis of 50-75% (Group 2a, n=22) and moderate to severe CAD was defined by stenosis ≥76% (Group 2b, n=24). Myocardial perfusion and wall motion were graded by a 5 point-scale, 20-segment model. The sensitivity of myocardial perfusion alone was 50% for Group 2a, 83% for Group 2b and 67% for Group 2 as a whole. The overall specificity was 90%. When the wall motion analysis was combined, the sensitivity was increased to 82% in Group 2a and 92% in Group 2b. The ability to detect a wall motion abnormality immediately after exercise gives incremental diagnostic value to myocardial perfusion SPECT in the identification of mild, single-vessel CAD. (author)

  10. Oligo- and polymeric FET devices: Thiophene-based active materials and their interaction with different gate dielectrics

    International Nuclear Information System (INIS)

    Porzio, W.; Destri, S.; Pasini, M.; Bolognesi, A.; Angiulli, A.; Di Gianvincenzo, P.; Natali, D.; Sampietro, M.; Caironi, M.; Fumagalli, L.; Ferrari, S.; Peron, E.; Perissinotti, F.

    2006-01-01

    Derivatives of both oligo- and polythiophene-based FET were recently considered for low cost electronic applications. In the device optimization, factors like redox reversibility of the molecule/polymer, electronic level compatibility with source/drain electrodes, packing closeness, and orientation versus the electrodes, can determine the overall performance. In addition, a gate insulator with a high dielectric constant, a low leakage current, and capability to promote ordering in the semiconductor is required to increase device performances and to lower the FET operating voltage. In this view, Al 2 O 3 appears a good candidate, although its widespread adoption is limited by the disorder that such oxide induces on the semiconductor with detrimental consequences on semiconductor electrical properties. In this contribution, an overview of recent results obtained on thiophene-derivative-based FET devices, fabricated by different growth techniques, and using both thermally grown SiO 2 and Al 2 O 3 from atomic layer deposition gate insulators will be reported and discussed with particular reference to organic solid state aggregation, morphology, and organic-inorganic interface

  11. NASA Electronic Parts and Packaging (NEPP) Field Programmable Gate Array (FPGA) Single Event Effects (SEE) Test Guideline Update

    Science.gov (United States)

    Berg, Melanie D.; LaBel, Kenneth A.

    2018-01-01

    The following are updated or new subjects added to the FPGA SEE Test Guidelines manual: academic versus mission specific device evaluation, single event latch-up (SEL) test and analysis, SEE response visibility enhancement during radiation testing, mitigation evaluation (embedded and user-implemented), unreliable design and its affects to SEE Data, testing flushable architectures versus non-flushable architectures, intellectual property core (IP Core) test and evaluation (addresses embedded and user-inserted), heavy-ion energy and linear energy transfer (LET) selection, proton versus heavy-ion testing, fault injection, mean fluence to failure analysis, and mission specific system-level single event upset (SEU) response prediction. Most sections within the guidelines manual provide information regarding best practices for test structure and test system development. The scope of this manual addresses academic versus mission specific device evaluation and visibility enhancement in IP Core testing.

  12. Dynamic material behavior determination using single fiber impact

    NARCIS (Netherlands)

    Heru Utomo, B.D.; Broos, J.P.F.

    2007-01-01

    Mechanical properties of fiber materials are used as input data for amongst others impact simulations on fiber based structures to predict their behavior. Accurate predictions for such materials are still not possible, because the mechanical properties are usually determined (quasi-)statically or

  13. Volatile and Nonvolatile Characteristics of Asymmetric Dual-Gate Thyristor RAM with Vertical Structure.

    Science.gov (United States)

    Kim, Hyun-Min; Kwon, Dae Woong; Kim, Sihyun; Lee, Kitae; Lee, Junil; Park, Euyhwan; Lee, Ryoongbin; Kim, Hyungjin; Kim, Sangwan; Park, Byung-Gook

    2018-09-01

    In this paper, the volatile and nonvolatile characteristics of asymmetric dual-gate thyristor random access memory (TRAM) are investigated using the technology of a computer-aided design (TCAD) simulation. Owing to the use of two independent gates having different gate dielectric layers, volatile and nonvolatile memory functions can be realized in a single device. The first gate with a silicon oxide layer controls the one-transistor dynamic random access memory (1T-DRAM) characteristics of the device. From the simulation results, a rapid write speed (107) can be achieved. The second gate, whose dielectric material is composed of oxide/nitride/oxide (O/N/O) layers, is used to implement the nonvolatile property by trapping charges in the nitride layer. In addition, this offers an advantage when processing the 3D-stack memory application, as the device has a vertical channel structure with polycrystalline silicon.

  14. GATE: Improving the computational efficiency

    International Nuclear Information System (INIS)

    Staelens, S.; De Beenhouwer, J.; Kruecker, D.; Maigne, L.; Rannou, F.; Ferrer, L.; D'Asseler, Y.; Buvat, I.; Lemahieu, I.

    2006-01-01

    GATE is a software dedicated to Monte Carlo simulations in Single Photon Emission Computed Tomography (SPECT) and Positron Emission Tomography (PET). An important disadvantage of those simulations is the fundamental burden of computation time. This manuscript describes three different techniques in order to improve the efficiency of those simulations. Firstly, the implementation of variance reduction techniques (VRTs), more specifically the incorporation of geometrical importance sampling, is discussed. After this, the newly designed cluster version of the GATE software is described. The experiments have shown that GATE simulations scale very well on a cluster of homogeneous computers. Finally, an elaboration on the deployment of GATE on the Enabling Grids for E-Science in Europe (EGEE) grid will conclude the description of efficiency enhancement efforts. The three aforementioned methods improve the efficiency of GATE to a large extent and make realistic patient-specific overnight Monte Carlo simulations achievable

  15. Can multi-slice or navigator-gated R2* MRI replace single-slice breath-hold acquisition for hepatic iron quantification?

    International Nuclear Information System (INIS)

    Loeffler, Ralf B.; McCarville, M.B.; Song, Ruitian; Hillenbrand, Claudia M.; Wagstaff, Anne W.; Smeltzer, Matthew P.; Krafft, Axel J.; Hankins, Jane S.

    2017-01-01

    Liver R2* values calculated from multi-gradient echo (mGRE) magnetic resonance images (MRI) are strongly correlated with hepatic iron concentration (HIC) as shown in several independently derived biopsy calibration studies. These calibrations were established for axial single-slice breath-hold imaging at the location of the portal vein. Scanning in multi-slice mode makes the exam more efficient, since whole-liver coverage can be achieved with two breath-holds and the optimal slice can be selected afterward. Navigator echoes remove the need for breath-holds and allow use in sedated patients. To evaluate if the existing biopsy calibrations can be applied to multi-slice and navigator-controlled mGRE imaging in children with hepatic iron overload, by testing if there is a bias-free correlation between single-slice R2* and multi-slice or multi-slice navigator controlled R2*. This study included MRI data from 71 patients with transfusional iron overload, who received an MRI exam to estimate HIC using gradient echo sequences. Patient scans contained 2 or 3 of the following imaging methods used for analysis: single-slice images (n = 71), multi-slice images (n = 69) and navigator-controlled images (n = 17). Small and large blood corrected region of interests were selected on axial images of the liver to obtain R2* values for all data sets. Bland-Altman and linear regression analysis were used to compare R2* values from single-slice images to those of multi-slice images and navigator-controlled images. Bland-Altman analysis showed that all imaging method comparisons were strongly associated with each other and had high correlation coefficients (0.98 ≤ r ≤ 1.00) with P-values ≤0.0001. Linear regression yielded slopes that were close to 1. We found that navigator-gated or breath-held multi-slice R2* MRI for HIC determination measures R2* values comparable to the biopsy-validated single-slice, single breath-hold scan. We conclude that these three R2* methods can be

  16. Can multi-slice or navigator-gated R2* MRI replace single-slice breath-hold acquisition for hepatic iron quantification?

    Energy Technology Data Exchange (ETDEWEB)

    Loeffler, Ralf B.; McCarville, M.B.; Song, Ruitian; Hillenbrand, Claudia M. [St. Jude Children' s Research Hospital, Diagnostic Imaging, Memphis, TN (United States); Wagstaff, Anne W. [St. Jude Children' s Research Hospital, Diagnostic Imaging, Memphis, TN (United States); Rhodes College, Memphis, TN (United States); University of Alabama at Birmingham School of Medicine, Birmingham, AL (United States); Smeltzer, Matthew P. [St. Jude Children' s Research Hospital, Department of Biostatistics, Memphis, TN (United States); University of Memphis, Division of Epidemiology, Biostatistics, and Environmental Health, School of Public Health, Memphis, TN (United States); Krafft, Axel J. [St. Jude Children' s Research Hospital, Diagnostic Imaging, Memphis, TN (United States); University Hospital Center Freiburg, Department of Radiology, Freiburg (Germany); Hankins, Jane S. [St. Jude Children' s Research Hospital, Department of Hematology, Memphis, TN (United States)

    2017-01-15

    Liver R2* values calculated from multi-gradient echo (mGRE) magnetic resonance images (MRI) are strongly correlated with hepatic iron concentration (HIC) as shown in several independently derived biopsy calibration studies. These calibrations were established for axial single-slice breath-hold imaging at the location of the portal vein. Scanning in multi-slice mode makes the exam more efficient, since whole-liver coverage can be achieved with two breath-holds and the optimal slice can be selected afterward. Navigator echoes remove the need for breath-holds and allow use in sedated patients. To evaluate if the existing biopsy calibrations can be applied to multi-slice and navigator-controlled mGRE imaging in children with hepatic iron overload, by testing if there is a bias-free correlation between single-slice R2* and multi-slice or multi-slice navigator controlled R2*. This study included MRI data from 71 patients with transfusional iron overload, who received an MRI exam to estimate HIC using gradient echo sequences. Patient scans contained 2 or 3 of the following imaging methods used for analysis: single-slice images (n = 71), multi-slice images (n = 69) and navigator-controlled images (n = 17). Small and large blood corrected region of interests were selected on axial images of the liver to obtain R2* values for all data sets. Bland-Altman and linear regression analysis were used to compare R2* values from single-slice images to those of multi-slice images and navigator-controlled images. Bland-Altman analysis showed that all imaging method comparisons were strongly associated with each other and had high correlation coefficients (0.98 ≤ r ≤ 1.00) with P-values ≤0.0001. Linear regression yielded slopes that were close to 1. We found that navigator-gated or breath-held multi-slice R2* MRI for HIC determination measures R2* values comparable to the biopsy-validated single-slice, single breath-hold scan. We conclude that these three R2* methods can be

  17. High speed gated x-ray imagers

    International Nuclear Information System (INIS)

    Kilkenny, J.D.; Bell, P.; Hanks, R.; Power, G.; Turner, R.E.; Wiedwald, J.

    1988-01-01

    Single and multi-frame gated x-ray images with time-resolution as fast as 150 psec are described. These systems are based on the gating of microchannel plates in a stripline configuration. The gating voltage comes from the avalanche breakdown of reverse biased p-n junction producing high power voltage pulses as short as 70 psec. Results from single and four frame x-ray cameras used on Nova are described. 8 refs., 9 figs

  18. Hybrid ECG-gated versus non-gated 512-slice CT angiography of the aorta and coronary artery: image quality and effect of a motion correction algorithm.

    Science.gov (United States)

    Lee, Ji Won; Kim, Chang Won; Lee, Geewon; Lee, Han Cheol; Kim, Sang-Pil; Choi, Bum Sung; Jeong, Yeon Joo

    2018-02-01

    Background Using the hybrid electrocardiogram (ECG)-gated computed tomography (CT) technique, assessment of entire aorta, coronary arteries, and aortic valve can be possible using single-bolus contrast administration within a single acquisition. Purpose To compare the image quality of hybrid ECG-gated and non-gated CT angiography of the aorta and evaluate the effect of a motion correction algorithm (MCA) on coronary artery image quality in a hybrid ECG-gated aorta CT group. Material and Methods In total, 104 patients (76 men; mean age = 65.8 years) prospectively randomized into two groups (Group 1 = hybrid ECG-gated CT; Group 2 = non-gated CT) underwent wide-detector array aorta CT. Image quality, assessed using a four-point scale, was compared between the groups. Coronary artery image quality was compared between the conventional reconstruction and motion correction reconstruction subgroups in Group 1. Results Group 1 showed significant advantages over Group 2 in aortic wall, cardiac chamber, aortic valve, coronary ostia, and main coronary arteries image quality (all P ECG-gated CT significantly improved the heart and aortic wall image quality and the MCA can further improve the image quality and interpretability of coronary arteries.

  19. Transcriptome-Wide Single Nucleotide Polymorphisms (SNPs for Abalone (Haliotis midae: Validation and Application Using GoldenGate Medium-Throughput Genotyping Assays

    Directory of Open Access Journals (Sweden)

    Rouvay Roodt-Wilding

    2013-09-01

    Full Text Available Haliotis midae is one of the most valuable commercial abalone species in the world, but is highly vulnerable, due to exploitation, habitat destruction and predation. In order to preserve wild and cultured stocks, genetic management and improvement of the species has become crucial. Fundamental to this is the availability and employment of molecular markers, such as microsatellites and Single Nucleotide Polymorphisms (SNPs . Transcriptome sequences generated through sequencing-by-synthesis technology were utilized for the in vitro and in silico identification of 505 putative SNPs from a total of 316 selected contigs. A subset of 234 SNPs were further validated and characterized in wild and cultured abalone using two Illumina GoldenGate genotyping assays. Combined with VeraCode technology, this genotyping platform yielded a 65%−69% conversion rate (percentage polymorphic markers with a global genotyping success rate of 76%−85% and provided a viable means for validating SNP markers in a non-model species. The utility of 31 of the validated SNPs in population structure analysis was confirmed, while a large number of SNPs (174 were shown to be informative and are, thus, good candidates for linkage map construction. The non-synonymous SNPs (50 located in coding regions of genes that showed similarities with known proteins will also be useful for genetic applications, such as the marker-assisted selection of genes of relevance to abalone aquaculture.

  20. Transcriptome-wide single nucleotide polymorphisms (SNPs) for abalone (Haliotis midae): validation and application using GoldenGate medium-throughput genotyping assays.

    Science.gov (United States)

    Bester-Van Der Merwe, Aletta; Blaauw, Sonja; Du Plessis, Jana; Roodt-Wilding, Rouvay

    2013-09-23

    Haliotis midae is one of the most valuable commercial abalone species in the world, but is highly vulnerable, due to exploitation, habitat destruction and predation. In order to preserve wild and cultured stocks, genetic management and improvement of the species has become crucial. Fundamental to this is the availability and employment of molecular markers, such as microsatellites and single nucleotide (SNPs). Transcriptome sequences generated through sequencing-by-synthesis technology were utilized for the in vitro and in silico identification of 505 putative SNPs from a total of 316 selected contigs. A subset of 234 SNPs were further validated and characterized in wild and cultured abalone using two Illumina GoldenGate genotyping assays. Combined with VeraCode technology, this genotyping platform yielded a 65%-69% conversion rate (percentage polymorphic markers) with a global genotyping success rate of 76%-85% and provided a viable means for validating SNP markers in a non-model species. The utility of 31 of the validated SNPs in population structure analysis was confirmed, while a large number of SNPs (174) were shown to be informative and are, thus, good candidates for linkage map construction. The non-synonymous SNPs (50) located in coding regions of genes that showed similarities with known proteins will also be useful for genetic applications, such as the marker-assisted selection of genes of relevance to abalone aquaculture.

  1. Assessment of right ventricular function using gated blood pool single photon emission computed tomography in inferior myocardial infarction with or without hemodynamically significant right ventricular infarction

    International Nuclear Information System (INIS)

    Takahashi, Masaharu

    1992-01-01

    Right ventricular function was assessed using gated blood pool single photon emission computed tomography (GSPECT) in 10 normal subjects and 14 patients with inferior myocardial infarction. Three-dimensional backbround subtraction was achieved by applying an optimal cut off level. The patient group consisted of 6 patients with definite hemodynamic abnormalities indicative of right ventricular infarction (RVI) and 8 other patients with significant obstructive lesion at the proximal portion of right coronary artery without obvious hemodynamic signs of RVI. Right ventricular regional wall motion abnormalities were demonstrated on GSPECT functional images and the indices of right ventricular function (i.e the right ventricular ejection fraction (RVEF), the right ventricular peak ejection rate (RVPER) and the right ventricular peak filling rate (RVPFR)) were significantly reduced in the patient group, not only in the patients with definite RVI but also in those without hemodynamic signs of RVI, even in the absence of definite hemodynamic signs, when the proximal portion of right coronary artery is obstructed. It is concluded that GSPECT is reliable for the assessment of right ventricular function and regional wall motion, and is also useful for the diagnosis of RVI. (author)

  2. Electrocardiograph-gated single photon emission computed tomography radionuclide angiography presents good interstudy reproducibility for the quantification of global systolic right ventricular function.

    Science.gov (United States)

    Daou, Doumit; Coaguila, Carlos; Vilain, Didier

    2007-05-01

    Electrocardiograph-gated single photon emission computed tomography (SPECT) radionuclide angiography provides accurate measurement of right ventricular ejection fraction and end-diastolic and end-systolic volumes. In this study, we report the interstudy precision and reliability of SPECT radionuclide angiography for the measurement of global systolic right ventricular function using two, three-dimensional volume processing methods (SPECT-QBS, SPECT-35%). These were compared with equilibrium planar radionuclide angiography. Ten patients with chronic coronary artery disease having two SPECT and planar radionuclide angiography acquisitions were included. For the right ventricular ejection fraction, end-diastolic volume and end-systolic volume, the interstudy precision and reliability were better with SPECT-35% than with SPECT-QBS. The sample sizes needed to objectify a change in right ventricular volumes or ejection fraction were lower with SPECT-35% than with SPECT-QBS. The interstudy precision and reliability of SPECT-35% and SPECT-QBS for the right ventricle were better than those of equilibrium planar radionuclide angiography, but poorer than those previously reported for the left ventricle with SPECT radionuclide angiography on the same population. SPECT-35% and SPECT-QBS present good interstudy precision and reliability for right ventricular function, with the results favouring the use of SPECT-35%. The results are better than those of equilibrium planar radionuclide angiography, but poorer than those previously reported for the left ventricle with SPECT radionuclide angiography. They need to be confirmed in a larger population.

  3. Evaluation of left ventricular function and volume with multidetector-row computed tomography. Comparison with electrocardiogram-gated single photon emission computed tomography

    International Nuclear Information System (INIS)

    Suzuki, Takeya; Yamashina, Shohei; Nanjou, Shuji; Yamazaki, Junichi

    2007-01-01

    This study compared left ventricular systolic function and volume determined by multidetector-row computed tomography (MDCT) and electrocardiogram-gated single photon emission computed tomography (G-SPECT) Thirty-seven patients with coronary artery disease and non-cardiovascular disease underwent MDCT. In this study, left ventricular ejection fraction (EF), left ventricular end-diastolic volume (EDV) and left ventricular end-systolic volume (ESV) were calculated using only two-phase imaging with MDCT. Left ventricular function and volume were compared using measurements from G-SPECT. We conducted MDCT and G-SPECT virtually simultaneously. Both the EF and ESV evaluated by MDCT closely correlated with G-SPECT (r=0.763, P 65 bpm) during MDCT significantly influenced the difference in EF calculated from MDCT and G-SPECT (P<0.05). Left ventricular function can be measured with MDCT as well as G-SPECT. However, a heart rate over 65 bpm during MDCT negatively affects the EF correlation between MDCT and G-SPECT. (author)

  4. Nonvolatile ferroelectric memory based on PbTiO3 gated single-layer MoS2 field-effect transistor

    Science.gov (United States)

    Shin, Hyun Wook; Son, Jong Yeog

    2018-01-01

    We fabricated ferroelectric non-volatile random access memory (FeRAM) based on a field effect transistor (FET) consisting of a monolayer MoS2 channel and a ferroelectric PbTiO3 (PTO) thin film of gate insulator. An epitaxial PTO thin film was deposited on a Nb-doped SrTiO3 (Nb:STO) substrate via pulsed laser deposition. A monolayer MoS2 sheet was exfoliated from a bulk crystal and transferred to the surface of the PTO/Nb:STO. Structural and surface properties of the PTO thin film were characterized by X-ray diffraction and atomic force microscopy, respectively. Raman spectroscopy analysis was performed to identify the single-layer MoS2 sheet on the PTO/Nb:STO. We obtained mobility value (327 cm2/V·s) of the MoS2 channel at room temperature. The MoS2-PTO FeRAM FET showed a wide memory window with 17 kΩ of resistance variation which was attributed to high remnant polarization of the epitaxially grown PTO thin film. According to the fatigue resistance test for the FeRAM FET, however, the resistance states gradually varied during the switching cycles of 109. [Figure not available: see fulltext.

  5. Generation of single attosecond pulse within one atomic unit by using multi-cycle inhomogeneous polarization gating technology in bowtie-shaped nanostructure

    Science.gov (United States)

    Feng, Liqiang; Liu, Hang

    2018-04-01

    The generations of high-order harmonic spectra and single attosecond pulses (SAPs) driven by the multi-cycle inhomogeneous polarization gating (PG) technology in the bowtie-shaped nanostructure have been theoretically investigated. It is found that by setting the bowtie-shaped nanostructure along the driven laser polarization direction, not only the extension of the harmonic cutoff can be achieved, caused by the surface plasmon polaritons, but also the modulations of the harmonics can be decreased, caused by the PG technology and the inhomogeneous effect. As a result, the contribution of the harmonic plateau is only from one harmonic emission peak with the dominant short quantum path. Further, by properly adding a half-cycle pulse into the driven laser field, the harmonic emission process can be precisely controlled in the half-cycle duration and a supercontinuum with the bandwidth of 263 eV can be obtained. Finally, by directly superposing the harmonics from this supercontinuum, a SAP with the full width at half maximum of 23 as can be obtained, which is shorter than one atomic unit.

  6. High-Performance Flexible Single-Crystalline Silicon Nanomembrane Thin-Film Transistors with High- k Nb2O5-Bi2O3-MgO Ceramics as Gate Dielectric on a Plastic Substrate.

    Science.gov (United States)

    Qin, Guoxuan; Zhang, Yibo; Lan, Kuibo; Li, Lingxia; Ma, Jianguo; Yu, Shihui

    2018-04-18

    A novel method of fabricating flexible thin-film transistor based on single-crystalline Si nanomembrane (SiNM) with high- k Nb 2 O 5 -Bi 2 O 3 -MgO (BMN) ceramic gate dielectric on a plastic substrate is demonstrated in this paper. SiNMs are successfully transferred to a flexible polyethylene terephthalate substrate, which has been plated with indium-tin-oxide (ITO) conductive layer and high- k BMN ceramic gate dielectric layer by room-temperature magnetron sputtering. The BMN ceramic gate dielectric layer demonstrates as high as ∼109 dielectric constant, with only dozens of pA current leakage. The Si-BMN-ITO heterostructure has only ∼nA leakage current at the applied voltage of 3 V. The transistor is shown to work at a high current on/off ratio of above 10 4 , and the threshold voltage is ∼1.3 V, with over 200 cm 2 /(V s) effective channel electron mobility. Bending tests have been conducted and show that the flexible transistors have good tolerance on mechanical bending strains. These characteristics indicate that the flexible single-crystalline SiNM transistors with BMN ceramics as gate dielectric have great potential for applications in high-performance integrated flexible circuit.

  7. Dual-Material Gate Approach to Suppression of Random-Dopant-Induced Characteristic Fluctuation in 16 nm Metal-Oxide-Semiconductor Field-Effect-Transistor Devices

    Science.gov (United States)

    Li, Yiming; Lee, Kuo-Fu; Yiu, Chun-Yen; Chiu, Yung-Yueh; Chang, Ru-Wei

    2011-04-01

    In this work, we explore for the first time dual-material gate (DMG) and inverse DMG devices for suppressing the random-dopant (RD)-induced characteristic fluctuation in 16 nm metal-oxide-semiconductor field-effect-transistor (MOSFET) devices. The physical mechanism of suppressing the characteristic fluctuation of DMG devices is observed and discussed. The achieved improvement in suppressing the RD-induced threshold voltage, on-state current, and off-state current fluctuations are 28, 12.3, and 59%, respectively. To further suppress the fluctuations, an approach that combines the DMG method and channel-doping-profile engineering is also advanced and explored. The results of our study show that among the suppression techniques, the use of the DMG device with an inverse lateral asymmetric channel-doping-profile has good immunity to fluctuation.

  8. Double optical gating

    Science.gov (United States)

    Gilbertson, Steve

    The observation and control of dynamics in atomic and molecular targets requires the use of laser pulses with duration less than the characteristic timescale of the process which is to be manipulated. For electron dynamics, this time scale is on the order of attoseconds where 1 attosecond = 10 -18 seconds. In order to generate pulses on this time scale, different gating methods have been proposed. The idea is to extract or "gate" a single pulse from an attosecond pulse train and switch off all the other pulses. While previous methods have had some success, they are very difficult to implement and so far very few labs have access to these unique light sources. The purpose of this work is to introduce a new method, called double optical gating (DOG), and to demonstrate its effectiveness at generating high contrast single isolated attosecond pulses from multi-cycle lasers. First, the method is described in detail and is investigated in the spectral domain. The resulting attosecond pulses produced are then temporally characterized through attosecond streaking. A second method of gating, called generalized double optical gating (GDOG), is also introduced. This method allows attosecond pulse generation directly from a carrier-envelope phase un-stabilized laser system for the first time. Next the methods of DOG and GDOG are implemented in attosecond applications like high flux pulses and extreme broadband spectrum generation. Finally, the attosecond pulses themselves are used in experiments. First, an attosecond/femtosecond cross correlation is used for characterization of spatial and temporal properties of femtosecond pulses. Then, an attosecond pump, femtosecond probe experiment is conducted to observe and control electron dynamics in helium for the first time.

  9. The impact of gate width setting and gate utilization factors on plutonium assay in passive correlated neutron counting

    Energy Technology Data Exchange (ETDEWEB)

    Henzlova, D., E-mail: henzlova@lanl.gov [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Menlove, H.O. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States); Croft, S. [Oak Ridge National Laboratory, Oak Ridge, TN 37831 (United States); Favalli, A.; Santi, P. [Los Alamos National Laboratory, Los Alamos, NM 87545 (United States)

    2015-10-11

    In the field of nuclear safeguards, passive neutron multiplicity counting (PNMC) is a method typically employed in non-destructive assay (NDA) of special nuclear material (SNM) for nonproliferation, verification and accountability purposes. PNMC is generally performed using a well-type thermal neutron counter and relies on the detection of correlated pairs or higher order multiplets of neutrons emitted by an assayed item. To assay SNM, a set of parameters for a given well-counter is required to link the measured multiplicity rates to the assayed item properties. Detection efficiency, die-away time, gate utilization factors (tightly connected to die-away time) as well as optimum gate width setting are among the key parameters. These parameters along with the underlying model assumptions directly affect the accuracy of the SNM assay. In this paper we examine the role of gate utilization factors and the single exponential die-away time assumption and their impact on the measurements for a range of plutonium materials. In addition, we examine the importance of item-optimized coincidence gate width setting as opposed to using a universal gate width value. Finally, the traditional PNMC based on multiplicity shift register electronics is extended to Feynman-type analysis and application of this approach to Pu mass assay is demonstrated.

  10. The impact of gate width setting and gate utilization factors on plutonium assay in passive correlated neutron counting

    International Nuclear Information System (INIS)

    Henzlova, D.; Menlove, H.O.; Croft, S.; Favalli, A.; Santi, P.

    2015-01-01

    In the field of nuclear safeguards, passive neutron multiplicity counting (PNMC) is a method typically employed in non-destructive assay (NDA) of special nuclear material (SNM) for nonproliferation, verification and accountability purposes. PNMC is generally performed using a well-type thermal neutron counter and relies on the detection of correlated pairs or higher order multiplets of neutrons emitted by an assayed item. To assay SNM, a set of parameters for a given well-counter is required to link the measured multiplicity rates to the assayed item properties. Detection efficiency, die-away time, gate utilization factors (tightly connected to die-away time) as well as optimum gate width setting are among the key parameters. These parameters along with the underlying model assumptions directly affect the accuracy of the SNM assay. In this paper we examine the role of gate utilization factors and the single exponential die-away time assumption and their impact on the measurements for a range of plutonium materials. In addition, we examine the importance of item-optimized coincidence gate width setting as opposed to using a universal gate width value. Finally, the traditional PNMC based on multiplicity shift register electronics is extended to Feynman-type analysis and application of this approach to Pu mass assay is demonstrated

  11. Gate valve performance prediction

    International Nuclear Information System (INIS)

    Harrison, D.H.; Damerell, P.S.; Wang, J.K.; Kalsi, M.S.; Wolfe, K.J.

    1994-01-01

    The Electric Power Research Institute is carrying out a program to improve the performance prediction methods for motor-operated valves. As part of this program, an analytical method to predict the stem thrust required to stroke a gate valve has been developed and has been assessed against data from gate valve tests. The method accounts for the loads applied to the disc by fluid flow and for the detailed mechanical interaction of the stem, disc, guides, and seats. To support development of the method, two separate-effects test programs were carried out. One test program determined friction coefficients for contacts between gate valve parts by using material specimens in controlled environments. The other test program investigated the interaction of the stem, disc, guides, and seat using a special fixture with full-sized gate valve parts. The method has been assessed against flow-loop and in-plant test data. These tests include valve sizes from 3 to 18 in. and cover a considerable range of flow, temperature, and differential pressure. Stem thrust predictions for the method bound measured results. In some cases, the bounding predictions are substantially higher than the stem loads required for valve operation, as a result of the bounding nature of the friction coefficients in the method

  12. Fluorescent single walled nanotube/silica composite materials

    Science.gov (United States)

    Dattelbaum, Andrew M.; Gupta, Gautam; Duque, Juan G.; Doorn, Stephen K.; Hamilton, Christopher E.; DeFriend Obrey, Kimberly A.

    2013-03-12

    Fluorescent composites of surfactant-wrapped single-walled carbon nanotubes (SWNTs) were prepared by exposing suspensions of surfactant-wrapped carbon nanotubes to tetramethylorthosilicate (TMOS) vapor. Sodium deoxycholate (DOC) and sodium dodecylsulphate (SDS) were the surfactants. No loss in emission intensity was observed when the suspension of DOC-wrapped SWNTs were exposed to the TMOS vapors, but about a 50% decrease in the emission signal was observed from the SDS-wrapped SWNTs nanotubes. The decrease in emission was minimal by buffering the SDS/SWNT suspension prior to forming the composite. Fluorescent xerogels were prepared by adding glycerol to the SWNT suspensions prior to TMOS vapor exposure, followed by drying the gels. Fluorescent aerogels were prepared by replacing water in the gels with methanol and then exposing them to supercritical fluid drying conditions. The aerogels can be used for gas sensing.

  13. Steam explosion studies with single drops of molten refractory materials

    International Nuclear Information System (INIS)

    Nelson, L.S.

    1980-01-01

    Laser heating, levitation melting, and metal combustion were used to prepare individual drops of molten refractory materials which simulate LWR fuel melt products. Drop temperatures ranged from approx. = 1500 to > 3000K. These drops, several millimeters in diameter, were injected into water and subjected to pressure transients (approx. = 1MPa peak pressures) generated by a submerged exploding bridgewire. Molten oxides of Fe, Al and Zr could be induced to explode with bridgewire initiation. High speed films showed the explosions with exceptional clarity, and pressure transducer records could be correlated with individual frames in the films. Pressure spikes one or two MPa high were generated whenever an explosion occurred. Debris particles were mostly spheroidal, with diameters in the range 10 to 1000 μm

  14. High-Resolution Single-Grain Diffraction of Polycrystalline Materials

    DEFF Research Database (Denmark)

    Lienert, Ulrich; Ribárik, Gábor; Ungar, Tamas

    2017-01-01

    . The microstructure usually influences the materials properties critically. It has been demonstrated that, by using high-energy synchrotron radiation, diffraction peaks off individual grains can be recorded in-situ during processing. Important information such as the orientation, average strain, and size...... of individual grains can be obtained, even if the peak shapes are commonly not analyzed. However, it is also well-known that the shape of diffraction peaks, if observed with sufficient resolution, contains significant information about the microstructure. While the intensity distribution in reciprocal space...... of a perfect lattice consists of delta functions located at the reciprocal lattice points, defects induce characteristic peak broadening. In order to exploit the wealth of microstructural information contained in broadened diffraction peaks, the intensity distribution has to be characterized in all three...

  15. Vasodilator stress impairs the left ventricular function obtained with gated single-photon emission computed tomography in patients with known or suspected coronary artery disease

    International Nuclear Information System (INIS)

    Odagiri, Keiichi; Uehara, Akihiko; Kurata, Chinori

    2010-01-01

    Transient ischemic dilatation (TID) and post-stress dysfunction of the left ventricle (LV) are important markers of severe coronary artery disease (CAD). To clarify the effects of stressor type on TID and post-stress LV dysfunction, changes in LV measurements were compared between patients with exercise- or vasodilator-induced stress. The 689 patients referred for technetium-99m tetrofosmin myocardial perfusion imaging were included. Patients were stressed with either a vasodilator (n=236) or exercise (n=453). LV measurements were obtained with electrocardiogram (ECG)-gated single photon emission computed tomography (SPECT). LV end-diastolic and end-systolic volume indexes (LVEDVI, LVESVI) increased and LV ejection fraction (LVEF) decreased after stress in the vasodilator-stress group. Vasodilator-stress and the summed difference score (SDS) were independent variables that decreased LVEF after stress. Even in patients without reversible defects, vasodilator-stress impaired LV function. There were no differences in the stress-to-rest ratios of LVEDVI (rEDV) and LVESVI (rESV) among patients with normal myocardial perfusion, fixed defects and reversible defects in the vasodilator-stress group, whereas in the exercise-stress group, rESV was significantly higher in the patients with reversible defects than in those without reversible defects. Within the vasodilator-stress group, neither rEDV nor rESV correlated with the SDS. Vasodilator-stress by itself decreases LVEF after stress. TID should be carefully interpreted when vasodilator-stress is used to detect severe CAD. (author)

  16. Validation of the Gate simulation platform in single photon emission computed tomography and application to the development of a complete 3-dimensional reconstruction algorithm; Validation de la plate-forme de simulation GATE en tomographie a emission monophotonique et application au developpement d'un algorithme de reconstruction 3D complete

    Energy Technology Data Exchange (ETDEWEB)

    Lazaro, D

    2003-10-01

    Monte Carlo simulations are currently considered in nuclear medical imaging as a powerful tool to design and optimize detection systems, and also to assess reconstruction algorithms and correction methods for degrading physical effects. Among the many simulators available, none of them is considered as a standard in nuclear medical imaging: this fact has motivated the development of a new generic Monte Carlo simulation platform (GATE), based on GEANT4 and dedicated to SPECT/PET (single photo emission computed tomography / positron emission tomography) applications. We participated during this thesis to the development of the GATE platform within an international collaboration. GATE was validated in SPECT by modeling two gamma cameras characterized by a different geometry, one dedicated to small animal imaging and the other used in a clinical context (Philips AXIS), and by comparing the results obtained with GATE simulations with experimental data. The simulation results reproduce accurately the measured performances of both gamma cameras. The GATE platform was then used to develop a new 3-dimensional reconstruction method: F3DMC (fully 3-dimension Monte-Carlo) which consists in computing with Monte Carlo simulation the transition matrix used in an iterative reconstruction algorithm (in this case, ML-EM), including within the transition matrix the main physical effects degrading the image formation process. The results obtained with the F3DMC method were compared to the results obtained with three other more conventional methods (FBP, MLEM, MLEMC) for different phantoms. The results of this study show that F3DMC allows to improve the reconstruction efficiency, the spatial resolution and the signal to noise ratio with a satisfactory quantification of the images. These results should be confirmed by performing clinical experiments and open the door to a unified reconstruction method, which could be applied in SPECT but also in PET. (author)

  17. Seven channel gated charge to time converter

    Energy Technology Data Exchange (ETDEWEB)

    Stubbs, R J; Waddoup, W D [Durham Univ. (UK)

    1977-11-01

    By using a hybrid integrated circuit seven independent gated charge to time converters have been constructed in a single width NIM module. Gate widths from < approximately 10 ns to approximately 300 ns are possible with a resolution of 0.25 pC, linearity is better than +-1 pC over 2.5 decades of input signal height. Together with a multichannel scaling system described in the following paper one has a very powerful multichannel gated ADC system.

  18. Multiterminal single-molecule-graphene-nanoribbon junctions with the thermoelectric figure of merit optimized via evanescent mode transport and gate voltage

    DEFF Research Database (Denmark)

    Saha, K.K.; Markussen, Troels; Thygesen, Kristian Sommer

    2011-01-01

    .5 at room temperature and 0.5 liquid nitrogen temperature. Using density functional theory combined with the nonequilibrium Green's function formalism for multiterminal devices, we show how the transmission resonance can be manipulated by the voltage applied to a third ZGNR top-gate electrode...

  19. Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.

    Science.gov (United States)

    Bae, Jong-Ho; Lee, Jong-Ho

    2016-05-01

    A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.

  20. A bistable electromagnetically actuated rotary gate microvalve

    International Nuclear Information System (INIS)

    Luharuka, Rajesh; Hesketh, Peter J

    2008-01-01

    Two types of rotary gate microvalves are developed for flow modulation in microfluidic systems. These microvalves have been tested for an open flow rate of up to 100 sccm and operate under a differential pressure of 6 psig with flow modulation of up to 100. The microvalve consists of a suspended gate that rotates in the plane of the chip to regulate flow through the orifice. The gate is suspended by a novel fully compliant in-plane rotary bistable micromechanism (IPRBM) that advantageously constrains the gate in all degrees of freedom except for in-plane rotational motion. Multiple inlet/outlet orifices provide flexibility of operating the microvalve in three different flow configurations. The rotary gate microvalve is switched with an external electromagnetic actuator. The suspended gate is made of a soft magnetic material and its electromagnetic actuation is based on the operating principle of a variable-reluctance stepper motor

  1. Impact of gate engineering in enhancement mode n++GaN/InAlN/AlN/GaN HEMTs

    Science.gov (United States)

    Adak, Sarosij; Swain, Sanjit Kumar; Rahaman, Hafizur; Sarkar, Chandan Kumar

    2016-12-01

    This paper illustrate the effect of gate material engineering on the performance of enhancement mode n++GaN/InAlN/AlN/GaN high electron mobility transistors (HEMTs). A comparative analysis of key device parameters is discussed for the Triple Material Gate (TMG), Dual Material Gate (DMG) and the Single Material Gate (SMG) structure HEMTs by considering the same device dimensions. The simulation results shows that an significant improvement is noticed in the key analysis parameters such as drain current (Id), transconductance (gm), cut off frequency (fT), RF current gain, maximum cut off frequency (fmax) and RF power gain of the gate material engineered devices with respect to SMG normally off n++GaN/InAlN/AlN/GaN HEMTs. This improvement is due to the existence of the perceivable step in the surface potential along the channel which successfully screens the drain potential variation in the source side of the channel for the gate engineering devices. The analysis suggested that the proposed TMG and DMG engineered structure enhancement mode n++GaN/InAlN/AlN/GaN HEMTs can be considered as a potential device for future high speed, microwave and digital application.

  2. SEMICONDUCTOR DEVICES: Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

    Science.gov (United States)

    Chia-Song, Wu; Hsing-Chung, Liu

    2009-11-01

    This paper investigates the feasibility of using a lanthanum oxide thin film (La2O3) with a high dielectric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT. An E/D mode pHEMT in a single chip was realized by selecting the appropriate La2O3 thickness. The thin La2O3 film was characterized: its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. La2O3 exhibited good thermal stability after post-deposition annealing at 200, 400 and 600 °C because of its high binding-energy (835.6 eV). Experimental results clearly demonstrated that the La2O3 thin film was thermally stable. The DC and RF characteristics of Pt/La2O3/Ti/Au gate and conventional Pt/Ti/Au gate pHEMTs were examined. The measurements indicated that the transistor with the Pt/La2O3/Ti/Au gate had a higher breakdown voltage and lower gate leakage current. Accordingly, the La2O3 thin film is a potential high-k material for use as a gate dielectric to improve electrical performance and the thermal effect in high-power applications.

  3. Cross-section of single-crystal materials used as thermal neutron filters

    International Nuclear Information System (INIS)

    Adib, M.

    2005-01-01

    Transmission properties of several single crystal materials important for neutron scattering instrumentation are presented. A computer codes are developed which permit the calculation of thermal diffuse and Bragg-scattering cross-sections of silicon., and sapphire as a function of material's constants, temperature and neutron energy, E, in the range 0.1 MeV .A discussion of the use of their single-crystal as a thermal neutron filter in terms of the optimum crystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons is given

  4. Edge-on gating effect in molecular wires.

    Science.gov (United States)

    Lo, Wai-Yip; Bi, Wuguo; Li, Lianwei; Jung, In Hwan; Yu, Luping

    2015-02-11

    This work demonstrates edge-on chemical gating effect in molecular wires utilizing the pyridinoparacyclophane (PC) moiety as the gate. Different substituents with varied electronic demands are attached to the gate to simulate the effect of varying gating voltages similar to that in field-effect transistor (FET). It was observed that the orbital energy level and charge carrier's tunneling barriers can be tuned by changing the gating group from strong electron acceptors to strong electron donors. The single molecule conductance and current-voltage characteristics of this molecular system are truly similar to those expected for an actual single molecular transistor.

  5. Integrated shape and material selection for single and multi-performance criteria

    International Nuclear Information System (INIS)

    Singh, Jasveer; Mirjalili, Vahid; Pasini, Damiano

    2011-01-01

    Research highlights: → The method of shape transformers is extended to torsional stiffness and combined load design. → The method is generalized for multi-criteria selection of shape and material. → Performance charts are presented for single and multi-objective selection of cross-section shape and material. → A four quadrant performance chart is presented to visualize the relation between objective function space and design variable space. -- Abstract: A shape and material selection method, based on the concept of shape transformers, has been recently introduced to characterize the mass efficiency of lightweight beams under bending and shear. This paper extends this method to deal with the case of torsional stiffness design, and generalize it to single and multi-crieria selection of lightweight shafts subjected to a combination of bending, shear, and torsional load. The novel feature of the paper is the useful integration of shape and material to model and visualize multi-objective selection problems. The scheme is centered on concept selection in structural design, and hinges on measures that govern the shape properties of a cross-section regardless of its size. These measures, referred as shape transformers, can classify shapes in a way similar to material classification. The procedure is exemplified by considering torsional stiffness as a constraint. The performance charts are developed for single and multi-criteria to visualize in a glance the whole range of cross-sectional shapes for each material. Each design chart is explained with a brief example.

  6. Optically stimulated luminescence techniques in retrospective dosimetry using single grains of quartz extracted from unheated materials

    Energy Technology Data Exchange (ETDEWEB)

    Joerkov Thomsen, Kristina

    2004-02-01

    This work investigates the possibility of applying optically stimulated luminescence (OSL) in retrospective dose determinations using unheated materials. It focuses on identifying materials suitable for use in assessment of doses absorbed as a consequence of radiation accidents (i.e. accident dosimetry). Special attention has been paid to quartz extracted from unheated building materials such as concrete and mortar. The single-aliquot regeneration-dose (SAR) protocol has been used to determine absorbed doses in small aliquots as well as single grains of quartz. It is shown that OSL measurements of single grains of quartz extracted from poorly-bleached building materials can provide useful information on radiation accident doses, even when the luminescence sensitivity is low. Sources of variance in well-bleached single grain dose distributions have been investigated in detail and it is concluded that the observed variability in the data is consistent with the sum (in quadrature) of a component, which depends on the number of photons detected from each grain, and a fixed component independent of light level. Dose depth profiles through laboratory irradiated concrete bricks have successfully been measured and minimum detection limits of less than 100 mGy are derived. Measurements of thermal transfer in single grains of poorly-bleached quartz show that thermal transfer is variable on a grain-to-grain basis and that it can be a source of variance in single-grain dose distributions. Furthermore, the potential of using common household and workplace chemicals, such as table salt, washing powder and water softener, in retrospective dosimetry has been investigated. It is concluded that such materials should be considered as retrospective dosimeters in the event of a radiation accident. (au)

  7. Multiple advanced logic gates made of DNA-Ag nanocluster and the application for intelligent detection of pathogenic bacterial genes† †Electronic supplementary information (ESI) available: Chemicals, materials and DNA sequences used in the investigation, the construction of YES, AND, OR, XOR and INH logic gates, CD and PAGE experimental results. See DOI: 10.1039/c7sc05246d

    Science.gov (United States)

    Lin, Xiaodong; Deng, Jiankang; Lyu, Yanlong; Qian, Pengcheng; Li, Yunfei

    2018-01-01

    The integration of multiple DNA logic gates on a universal platform to implement advance logic functions is a critical challenge for DNA computing. Herein, a straightforward and powerful strategy in which a guanine-rich DNA sequence lighting up a silver nanocluster and fluorophore was developed to construct a library of logic gates on a simple DNA-templated silver nanoclusters (DNA-AgNCs) platform. This library included basic logic gates, YES, AND, OR, INHIBIT, and XOR, which were further integrated into complex logic circuits to implement diverse advanced arithmetic/non-arithmetic functions including half-adder, half-subtractor, multiplexer, and demultiplexer. Under UV irradiation, all the logic functions could be instantly visualized, confirming an excellent repeatability. The logic operations were entirely based on DNA hybridization in an enzyme-free and label-free condition, avoiding waste accumulation and reducing cost consumption. Interestingly, a DNA-AgNCs-based multiplexer was, for the first time, used as an intelligent biosensor to identify pathogenic genes, E. coli and S. aureus genes, with a high sensitivity. The investigation provides a prototype for the wireless integration of multiple devices on even the simplest single-strand DNA platform to perform diverse complex functions in a straightforward and cost-effective way. PMID:29675221

  8. Wave propagation inside one-dimensional photonic crystals with single-negative materials

    International Nuclear Information System (INIS)

    Wang Ligang; Chen Hong; Zhu Shiyao

    2006-01-01

    The propagation of light waves in one-dimensional photonic crystals (1DPCs) composed of alternating layers of two kinds of single-negative materials is investigated theoretically. The phase velocity is negative when the frequency of the light wave is smaller than the certain critical frequency ω cr , while the Poynting vector is always positive. At normal incidence, such 1DPCs may act as equivalent left-handed materials. At the inclined incidence, the effective wave vectors inside such 1DPCs do refract negatively, while the effective energy flows do not refract negatively. Therefore, at the inclined incidence, the 1DPCs are not equivalent to the left-handed materials

  9. New gate opening hours

    CERN Multimedia

    GS Department

    2009-01-01

    Please note the new opening hours of the gates as well as the intersites tunnel from the 19 May 2009: GATE A 7h - 19h GATE B 24h/24 GATE C 7h - 9h\t17h - 19h GATE D 8h - 12h\t13h - 16h GATE E 7h - 9h\t17h - 19h Prévessin 24h/24 The intersites tunnel will be opened from 7h30 to 18h non stop. GS-SEM Group Infrastructure and General Services Department

  10. Impaired coronary flow reserve is the most important marker of viable myocardium in the myocardial segment-based analysis of dual-isotope gated myocardial perfusion single-photon emission computed tomography

    International Nuclear Information System (INIS)

    Lee, Won Woo; So, Young; Kim, Ki Bong; Lee, Dong Soo

    2014-01-01

    The aim of this study was to investigate the most robust predictor of myocardial viability among stress/rest reversibility (coronary flow reserve [CFR] impairment), 201 Tl perfusion status at rest, 201 Tl 24 hours redistribution and systolic wall thickening of 99m Tc-methoxyisobutylisonitrile using a dual isotope gated myocardial perfusion single-photon emission computed tomography (SPECT) in patients with coronary artery disease (CAD) who were re-vascularized with a coronary artery bypass graft (CABG) surgery. A total of 39 patients with CAD was enrolled (34 men and 5 women), aged between 36 and 72 years (mean 58 ± 8 standard in years) who underwent both pre- and 3 months post-CABG myocardial SPECT. We analyzed 17 myocardial segments per patient. Perfusion status and wall motion were semi-quantitatively evaluated using a 4-point grading system. Viable myocardium was defined as dysfunctional myocardium which showed wall motion improvement after CABG. The left ventricular ejection fraction (LVEF) significantly increased from 37.8 ± 9.0% to 45.5 ± 12.3% (p 201 Tl rest perfusion status (p = 0.024) were significant predictors of wall motion improvement. However, in multiple logistic regression analysis, stress/rest reversibility alone was a significant predictor for post-CABG wall motion improvement (p < 0.001). Stress/rest reversibility (impaired CFR) during dual-isotope gated myocardial perfusion SPECT was the single most important predictor of wall motion improvement after CABG.

  11. Learning Effectiveness and Cognitive Loads in Instructional Materials of Programming Language on Single and Dual Screens

    Science.gov (United States)

    Hsu, Jenq-Muh; Chang, Ting-Wen; Yu, Pao-Ta

    2012-01-01

    The teaching and learning environment in a traditional classroom typically includes a projection screen, a projector, and a computer within a digital interactive table. Instructors may apply multimedia learning materials using various information communication technologies to increase interaction effects. However, a single screen only displays a…

  12. Single cells for forensic DNA analysis--from evidence material to test tube.

    Science.gov (United States)

    Brück, Simon; Evers, Heidrun; Heidorn, Frank; Müller, Ute; Kilper, Roland; Verhoff, Marcel A

    2011-01-01

    The purpose of this project was to develop a method that, while providing morphological quality control, allows single cells to be obtained from the surfaces of various evidence materials and be made available for DNA analysis in cases where only small amounts of cell material are present or where only mixed traces are found. With the SteREO Lumar.V12 stereomicroscope and UV unit from Zeiss, it was possible to detect and assess single epithelial cells on the surfaces of various objects (e.g., glass, plastic, metal). A digitally operated micromanipulator developed by aura optik was used to lift a single cell from the surface of evidence material and to transfer it to a conventional PCR tube or to an AmpliGrid(®) from Advalytix. The actual lifting of the cells was performed with microglobes that acted as carriers. The microglobes were held with microtweezers and were transferred to the DNA analysis receptacles along with the adhering cells. In a next step, the PCR can be carried out in this receptacle without removing the microglobe. Our method allows a single cell to be isolated directly from evidence material and be made available for forensic DNA analysis. © 2010 American Academy of Forensic Sciences.

  13. Optimisation and validation of a 3D reconstruction algorithm for single photon emission computed tomography by means of GATE simulation platform

    International Nuclear Information System (INIS)

    El Bitar, Ziad

    2006-12-01

    Although time consuming, Monte-Carlo simulations remain an efficient tool enabling to assess correction methods for degrading physical effects in medical imaging. We have optimized and validated a reconstruction method baptized F3DMC (Fully 3D Monte Carlo) in which the physical effects degrading the image formation process were modelled using Monte-Carlo methods and integrated within the system matrix. We used the Monte-Carlo simulation toolbox GATE. We validated GATE in SPECT by modelling the gamma-camera (Philips AXIS) used in clinical routine. Techniques of threshold, filtering by a principal component analysis and targeted reconstruction (functional regions, hybrid regions) were used in order to improve the precision of the system matrix and to reduce the number of simulated photons as well as the time consumption required. The EGEE Grid infrastructures were used to deploy the GATE simulations in order to reduce their computation time. Results obtained with F3DMC were compared with the reconstruction methods (FBP, ML-EM, MLEMC) for a simulated phantom and with the OSEM-C method for the real phantom. Results have shown that the F3DMC method and its variants improve the restoration of activity ratios and the signal to noise ratio. By the use of the grid EGEE, a significant speed-up factor of about 300 was obtained. These results should be confirmed by performing studies on complex phantoms and patients and open the door to a unified reconstruction method, which could be used in SPECT and also in PET. (author)

  14. Evaluation of undoped ZnS single crystal materials for x-ray imaging applications

    Science.gov (United States)

    Saleh, Muad; Lynn, Kelvin G.; McCloy, John S.

    2017-05-01

    ZnS-based materials have a long history of use as x-ray luminescent materials. ZnS was one of the first discovered scintillators and is reported to have one of the highest scintillator efficiencies. The use of ZnS for high energy luminescence has been thus far limited to thin powder screens, such as ZnS:Ag which is used for detecting alpha radiation, due to opacity to its scintillation light, primarily due to scattering. ZnS in bulk form (chemical vapor deposited, powder processed, and single crystal) has high transmission and low scattering compared to powder screens. In this paper, the performance of single crystalline ZnS is evaluated for low energy x-ray (PLE) of several undoped ZnS single crystals is compared to their Radioluminescence (RL) spectra. It was found that the ZnS emission wavelength varies on the excitation source energy.

  15. Optimization of Ecg Gating in Quantitative Femoral Angiography

    International Nuclear Information System (INIS)

    Nilsson, S.; Berglund, I.; Erikson, U.; Johansson, J.; Walldius, G.

    2003-01-01

    Purpose: To determine which phase of the heart cycle would yield the highest reproducibility in measuring atherosclerosis-related variables such as arterial lumen volume and edge roughness. Material and Methods: 35 patients with hypercholesterolemia underwent select ive femoral angiography, repeated four times at 10-min intervals. The angiographies were performed with Ecg-gated exposures. In angiographies 1 and 2 the delay from R-wave maximum to each exposure was 0.1 s, in angiographies 3 and 4 the delay was 0.1, 0.3, 0.5 or 0.7 s or the exposures were performed 1/s without Ecg gating. Arterial lumen volume and edge roughness were measured in a 20-cm segment of the superficial femoral artery using a computer-based densitometric method. Measurement reproducibility was determined by comparing angiographies 1-2 and angiographies 3-4. Results: When measuring arterial lumen volume and edge roughness of a 20-cm segment of the femoral artery, reproducibility was not dependent on Ecg gating. In measuring single arterial diameters and cross-sectional areas, the reproducibility was better when exposures were made 0.1 s after the R-wave maximum than when using other settings of the Ecg gating device or without Ecg gating. Conclusion: The influence of pulsatile flow upon quantitative measurement in femoral angiograms seems to be the smallest possible in early systole, as can be demonstrated when measuring single diameters and cross-sectional areas. In variables based on integration over longer segments, measurement reproducibility seems to be independent of phase

  16. Optimization of Ecg Gating in Quantitative Femoral Angiography

    Energy Technology Data Exchange (ETDEWEB)

    Nilsson, S.; Berglund, I.; Erikson, U. [Univ. Hospital, Uppsala (Sweden). Dept. of Oncology, Radiology and Clinical Immunology; Johansson, J.; Walldius, G. [Karolinska Hospital, Stockholm (Sweden). King Gustav V Research Inst.

    2003-09-01

    Purpose: To determine which phase of the heart cycle would yield the highest reproducibility in measuring atherosclerosis-related variables such as arterial lumen volume and edge roughness. Material and Methods: 35 patients with hypercholesterolemia underwent select ive femoral angiography, repeated four times at 10-min intervals. The angiographies were performed with Ecg-gated exposures. In angiographies 1 and 2 the delay from R-wave maximum to each exposure was 0.1 s, in angiographies 3 and 4 the delay was 0.1, 0.3, 0.5 or 0.7 s or the exposures were performed 1/s without Ecg gating. Arterial lumen volume and edge roughness were measured in a 20-cm segment of the superficial femoral artery using a computer-based densitometric method. Measurement reproducibility was determined by comparing angiographies 1-2 and angiographies 3-4. Results: When measuring arterial lumen volume and edge roughness of a 20-cm segment of the femoral artery, reproducibility was not dependent on Ecg gating. In measuring single arterial diameters and cross-sectional areas, the reproducibility was better when exposures were made 0.1 s after the R-wave maximum than when using other settings of the Ecg gating device or without Ecg gating. Conclusion: The influence of pulsatile flow upon quantitative measurement in femoral angiograms seems to be the smallest possible in early systole, as can be demonstrated when measuring single diameters and cross-sectional areas. In variables based on integration over longer segments, measurement reproducibility seems to be independent of phase.

  17. Simulation of 50-nm Gate Graphene Nanoribbon Transistors

    Directory of Open Access Journals (Sweden)

    Cedric Nanmeni Bondja

    2016-01-01

    Full Text Available An approach to simulate the steady-state and small-signal behavior of GNR MOSFETs (graphene nanoribbon metal-semiconductor-oxide field-effect transistor is presented. GNR material parameters and a method to account for the density of states of one-dimensional systems like GNRs are implemented in a commercial device simulator. This modified tool is used to calculate the current-voltage characteristics as well the cutoff frequency fT and the maximum frequency of oscillation fmax of GNR MOSFETs. Exemplarily, we consider 50-nm gate GNR MOSFETs with N = 7 armchair GNR channels and examine two transistor configurations. The first configuration is a simplified MOSFET structure with a single GNR channel as usually studied by other groups. Furthermore, and for the first time in the literature, we study in detail a transistor structure with multiple parallel GNR channels and interribbon gates. It is shown that the calculated fT of GNR MOSFETs is significantly lower than that of GFETs (FET with gapless large-area graphene channel with comparable gate length due to the mobility degradation in GNRs. On the other hand, GNR MOSFETs show much higher fmax compared to experimental GFETs due the semiconducting nature of the GNR channels and the resulting better saturation of the drain current. Finally, it is shown that the gate control in FETs with multiple parallel GNR channels is improved while the cutoff frequency is degraded compared to single-channel GNR MOSFETs due to parasitic capacitances of the interribbon gates.

  18. Bias stress instability of double-gate a-IGZO TFTs on polyimide substrate

    Science.gov (United States)

    Cho, Won-Ju; Ahn, Min-Ju

    2017-09-01

    In this study, flexible double-gate thin-film transistor (TFT)-based amorphous indium-galliumzinc- oxide (a-IGZO) was fabricated on a polyimide substrate. Double-gate operation with connected front and back gates was compared with a single-gate operation. As a result, the double-gate a- IGZO TFT exhibited enhanced electrical characteristics as well as improved long-term reliability. Under positive- and negative-bias temperature stress, the threshold voltage shift of the double-gate operation was much smaller than that of the single-gate operation.

  19. Design considerations for a Space Shuttle Main Engine turbine blade made of single crystal material

    Science.gov (United States)

    Abdul-Aziz, A.; August, R.; Nagpal, V.

    1993-01-01

    Nonlinear finite-element structural analyses were performed on the first stage high-pressure fuel turbopump blade of the Space Shuttle Main Engine. The analyses examined the structural response and the dynamic characteristics at typical operating conditions. Single crystal material PWA-1480 was considered for the analyses. Structural response and the blade natural frequencies with respect to the crystal orientation were investigated. The analyses were conducted based on typical test stand engine cycle. Influence of combined thermal, aerodynamic, and centrifugal loadings was considered. Results obtained showed that the single crystal secondary orientation effects on the maximum principal stresses are not highly significant.

  20. Optically stimulated luminescence techniques in retrospective dosimetry using single grains of quartz extracted from unheated materials

    DEFF Research Database (Denmark)

    Thomsen, Kristina Jørkov

    dosimetry). Special attention has been paid to quartz extracted from unheated building materials such as concrete and mortar. The single-aliquot regeneration-dose (SAR) protocol has been used to determine absorbeddoses in small aliquots as well as single grains of quartz. It is shown that OSL measurements...... that the observed variability in the data is consistent with the sum (in quadrature) of a component,which depends on the number of photons detected from each grain, and a fixed component independent of light level. Dose depth profiles through laboratory irradiated concrete bricks have successfully been measured...

  1. Femtosecond laser ablation of single-wall carbon nanotube-based material

    International Nuclear Information System (INIS)

    Danilov, Pavel A; Ionin, Andrey A; Kudryashov, Sergey I; Makarov, Sergey V; Mel’nik, Nikolay N; Rudenko, Andrey A; Yurovskikh, Vladislav I; Zayarny, Dmitry V; Lednev, Vasily N; Obraztsova, Elena D; Pershin, Sergey M; Bunkin, Alexey F

    2014-01-01

    Single- and multi-shot femtosecond laser surface ablation of a single-wall carbon nanotube-based substrate at 515- and 1030 nm wavelengths was studied by scanning electron microscopy and micro-Raman spectroscopy. The laser ablation proceeds in two ways: as the low-fluence mesoscopic shallow disintegration of the surface nanotube packing, preserving the individual integrity and the semiconducting character of the nanotubes or as the high-fluence deep material removal apparently triggered by the strong intrinsic or impurity-mediated ablation of the individual carbon nanotubes on the substrate surface. (letter)

  2. Data mining for materials design: A computational study of single molecule magnet

    Energy Technology Data Exchange (ETDEWEB)

    Dam, Hieu Chi [Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Faculty of Physics, Vietnam National University, 334 Nguyen Trai, Hanoi (Viet Nam); Pham, Tien Lam; Ho, Tu Bao [Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa 923-1292 (Japan); Nguyen, Anh Tuan [Faculty of Physics, Vietnam National University, 334 Nguyen Trai, Hanoi (Viet Nam); Nguyen, Viet Cuong [HPC Systems, Inc., 3-9-15 Kaigan, Minato-ku, Tokyo 108-0022 (Japan)

    2014-01-28

    We develop a method that combines data mining and first principles calculation to guide the designing of distorted cubane Mn{sup 4+} Mn {sub 3}{sup 3+} single molecule magnets. The essential idea of the method is a process consisting of sparse regressions and cross-validation for analyzing calculated data of the materials. The method allows us to demonstrate that the exchange coupling between Mn{sup 4+} and Mn{sup 3+} ions can be predicted from the electronegativities of constituent ligands and the structural features of the molecule by a linear regression model with high accuracy. The relations between the structural features and magnetic properties of the materials are quantitatively and consistently evaluated and presented by a graph. We also discuss the properties of the materials and guide the material design basing on the obtained results.

  3. Respiratory gated beam delivery cannot facilitate margin reduction, unless combined with respiratory correlated image guidance

    International Nuclear Information System (INIS)

    Korreman, Stine S.; Juhler-Nottrup, Trine; Boyer, Arthur L.

    2008-01-01

    Purpose/objective: In radiotherapy of targets moving with respiration, beam gating is offered as a means of reducing the target motion. The purpose of this study is to evaluate the safe magnitude of margin reduction for respiratory gated beam delivery. Materials/methods: The study is based on data for 17 lung cancer patients in separate protocols at Rigshospitalet and Stanford Cancer Center. Respiratory curves for external optical markers and implanted fiducials were collected using equipment based on the RPM system (Varian Medical Systems). A total of 861 respiratory curves represented external measurements over 30 fraction treatment courses for 10 patients, and synchronous external/internal measurements in single sessions for seven patients. Variations in respiratory amplitude (simulated coaching) and external/internal phase shifts were simulated by perturbation with realistic values. Variations were described by medians and standard deviations (SDs) of position distributions of the markers. Gating windows (35% duty cycle) were retrospectively applied to the respiratory data for each session, mimicking the use of commercially available gating systems. Medians and SDs of gated data were compared to those of ungated data, to assess potential margin reductions. Results: External respiratory data collected over entire treatment courses showed SDs from 1.6 to 8.1 mm, the major part arising from baseline variations. The gated data had SDs from 1.5 to 7.7 mm, with a mean reduction of 0.3 mm (6%). Gated distributions were more skewed than ungated, and in a few cases a marginal miss of gated respiration would be found even if no margin reduction was applied. Regularization of breathing amplitude to simulate coaching did not alter these results significantly. Simulation of varying phase shifts between internal and external respiratory signals showed that the SDs of gated distributions were the same as for the ungated or smaller, but the median values were markedly shifted

  4. Physicomechanical properties of single- and two-phase polycrystalline materials on micro- and macroscopic levels

    International Nuclear Information System (INIS)

    Kuksa, L.V.; Arzamaskova, L.M.

    2000-01-01

    The results of studies on elastic and plastic properties of the single- and two-phase polycrystalline materials in dependence on the choice of the consideration scale level are presented. The experimental and theoretical methods, making it possible to study the role of the scale factor by consideration on the micro- and macrolevel and the peculiarities of forming the physicomechanical properties of the material as a whole, are developed. The dependences, characterizing the change of the physicomechanical properties by different scales of consideration, are obtained [ru

  5. Dissolution chemistry and biocompatibility of single-crystalline silicon nanomembranes and associated materials for transient electronics.

    Science.gov (United States)

    Hwang, Suk-Won; Park, Gayoung; Edwards, Chris; Corbin, Elise A; Kang, Seung-Kyun; Cheng, Huanyu; Song, Jun-Kyul; Kim, Jae-Hwan; Yu, Sooyoun; Ng, Joanne; Lee, Jung Eun; Kim, Jiyoung; Yee, Cassian; Bhaduri, Basanta; Su, Yewang; Omennetto, Fiorenzo G; Huang, Yonggang; Bashir, Rashid; Goddard, Lynford; Popescu, Gabriel; Lee, Kyung-Mi; Rogers, John A

    2014-06-24

    Single-crystalline silicon nanomembranes (Si NMs) represent a critically important class of material for high-performance forms of electronics that are capable of complete, controlled dissolution when immersed in water and/or biofluids, sometimes referred to as a type of "transient" electronics. The results reported here include the kinetics of hydrolysis of Si NMs in biofluids and various aqueous solutions through a range of relevant pH values, ionic concentrations and temperatures, and dependence on dopant types and concentrations. In vitro and in vivo investigations of Si NMs and other transient electronic materials demonstrate biocompatibility and bioresorption, thereby suggesting potential for envisioned applications in active, biodegradable electronic implants.

  6. Single access laparoscopic cholecystectomy: technique without the need for special materials and with better ergonomics

    Directory of Open Access Journals (Sweden)

    Marco Aurélio Lameirão Pinto

    Full Text Available The authors describe a surgical technique which allows, without increasing costs, to perform laparoscopic cholecystectomy with a single incision, without using specific materials and with better surgical ergonomics. The technique consists of a longitudinal umbilical incision, navel detachment, use of a permanent 10mm trocar and two clamps directly and bilaterally through the aponeurosis without the use of 5mm trocars, transcutaneous gallbladder repair with straight needle cotton suture, ligation with unabsorbable suture and umbilical incision for the specimen extraction. The presented technique enables the procedure with conventional and permanent materials, improving surgical ergonomics, with safety and aesthetic advantages.

  7. Automatic identification of single- and/or few-layer thin-film material

    DEFF Research Database (Denmark)

    2014-01-01

    One or more digital representations of single- (101) and/or few-layer (102) thin- film material are automatically identified robustly and reliably in a digital image (100), the digital image (100) having a predetermined number of colour components, by - determining (304) a background colour...... component of the digital image (100) for each colour component, and - determining or estimating (306) a colour component of thin-film material to be identified in the digital image (100) for each colour component by obtaining a pre-determined contrast value (C R; C G; C B) for each colour component...

  8. Myocardial gated single photon emission tomography (GSPECT) in men and women with low probability of coronary artery disease - qualitative assessment of beating slices and polar plots

    International Nuclear Information System (INIS)

    Dziuk, M.; Canizales, A.; Britton, K.E.

    2001-01-01

    Assessment of the variability of regional wall motion and thickening in men and women with normal left ventricular contraction and low probability of CAD by GSPECT. The rest 99mTcMyoview GSPECT protocol (700 Mbq) was performed in 28 women and 14 men. Qualitative beating slices - QLGS and polar plots - QGS were analyzed independently by scoring the colour scale (1 - severe impairment, 4 - normal). Then the regional wall motion and thickening in the anterior, lateral, inferior walls, the septum and apex were estimated. In all patients the motion in the inferior wall and septum assessed on polar maps were significantly different than one in QLGS but better in the apex. Regional wall thickening was underestimated in QGS polar plots in the anterior wall, septum, inferior and lateral wall. End diastolic and end systolic volumes were significantly greater in men (90±29, 69±25, p<0.02 and 40±20, 22±12, p<0.002 for EDV and ESV respectively). In the later group all walls except the inferior showed higher QGS thickening score in comparison to men. The motion score in the anterior wall was also significantly bigger (p<0.05). The visual regional motion and thickening assessment on beating slices in gated SPECT seems to be more reliable than polar plots in patients with normal left ventricular contraction and low probability of coronary artery disease. Gated SPECT polar maps show better myocardial thickening in women probably due to the smaller left ventricle size and subsequent partial volume effect. (author)

  9. Attenuation of Reactor Gamma Radiation and Fast Neutrons Through Large Single-Crystal Materials

    International Nuclear Information System (INIS)

    Adib, M.

    2009-01-01

    A generalized formula is given which, for neutron energies in the range 10-4< E< 10 eV and gamma rays with average energy 2 MeV , permits calculation of the transmission properties of several single crystal materials important for neutron scattering instrumentation. A computer program Filter was developed which permits the calculation of attenuation of gamma radiation, nuclear capture, thermal diffuse and Bragg-scattering cross-sections as a function of materials constants, temperature and neutron energy. The applicability of the deduced formula along with the code checked from the obtained agreement between the calculated and experimental neutron transmission through various single-crystals A feasibility study for use of Si, Ge, Pb, Bi and sapphire is detailed in terms of optimum crystal thickness, mosaic spread and cutting plane for efficient transmission of thermal reactor neutrons and for rejection of the accompanying fast neutrons and gamma rays.

  10. Clinical evaluation of the Tl-201 ECG-gated myocardial SPECT

    International Nuclear Information System (INIS)

    Mochizuki, Teruhito

    1989-01-01

    In order to evaluate the clinical usefulness of the Tl-201 ECG-gated myocardial single photon emission computed tomography (SPECT), we compared the wall motion and the grade of the Tl-201 uptake of the ECG-gated myocardial SPECT with the wall motion of the ECG-gated blood pool SPECT. Materials were 87 patients of 50 old myocardial infarctions (OMIs), 19 hypertrophic cardiomyopathies (HCMs), 2 dilated cardiomyopathies (DCMs) and 16 others. After intravenous injection of 111-185 MBq (3-5 mCi) of Tl-201 at rest, the projection data were acquired using a rotating gamma-camera through 180deg, from RAO 45deg in 24 directions, each of which consisted of 80-100 beats. For the reconstruction of ED, ES and non-gated images, R-R interval was divided into about 20 (18-22) fractions. In 348 regions of interest (anterior, septal, lateral and inferior wall) in 87 cases, wall motion and the Tl-201 uptake were evaluated to three grades (normal, hypokinesis and akinesis; normal, low and defect, respectively), which were compared with the wall motion of the ECG-gated blood pool SPECT. The wall motion and the grade of the Tl-201 uptake of the ECG-gated myocardial SPECT correlated well with the wall motion of the ECG-gated blood pool SPECT (96.6% and 87.9%, respectively). In conclusion, the ECG-gated myocardial SPECT can provide clear perfusion images and is a very useful diagnostic strategy to evaluate the regional wall motion and perfusion simultaneously. (author)

  11. Linear gate with prescaled window

    Energy Technology Data Exchange (ETDEWEB)

    Koch, J; Bissem, H H; Krause, H; Scobel, W [Hamburg Univ. (Germany, F.R.). 1. Inst. fuer Experimentalphysik

    1978-07-15

    An electronic circuit is described that combines the features of a linear gate, a single channel analyzer and a prescaler. It allows selection of a pulse height region between two adjustable thresholds and scales the intensity of the spectrum within this window down by a factor 2sup(N) (0<=N<=9), whereas the complementary part of the spectrum is transmitted without being affected.

  12. Hyperspectral material identification on radiance data using single-atmosphere or multiple-atmosphere modeling

    Science.gov (United States)

    Mariano, Adrian V.; Grossmann, John M.

    2010-11-01

    Reflectance-domain methods convert hyperspectral data from radiance to reflectance using an atmospheric compensation model. Material detection and identification are performed by comparing the compensated data to target reflectance spectra. We introduce two radiance-domain approaches, Single atmosphere Adaptive Cosine Estimator (SACE) and Multiple atmosphere ACE (MACE) in which the target reflectance spectra are instead converted into sensor-reaching radiance using physics-based models. For SACE, known illumination and atmospheric conditions are incorporated in a single atmospheric model. For MACE the conditions are unknown so the algorithm uses many atmospheric models to cover the range of environmental variability, and it approximates the result using a subspace model. This approach is sometimes called the invariant method, and requires the choice of a subspace dimension for the model. We compare these two radiance-domain approaches to a Reflectance-domain ACE (RACE) approach on a HYDICE image featuring concealed materials. All three algorithms use the ACE detector, and all three techniques are able to detect most of the hidden materials in the imagery. For MACE we observe a strong dependence on the choice of the material subspace dimension. Increasing this value can lead to a decline in performance.

  13. The Choice Method of Selected Material has influence single evaporation flash method

    International Nuclear Information System (INIS)

    Sunaryo, Geni Rina; Sumijanto; Nurul L, Siti

    2000-01-01

    The final objective of this research is to design the mini scale of desalination installation. It has been started from 1997/1998 and has been doing for this 3 years. Where the study on the assessment of various desalination system has been done in the first year and thermodynamic in the second year. In this third year, literatully study on material resistance from outside pressure has been done. The number of pressure for single evaporator flashing method is mainly depend on the temperature that applied in that system. In this paper, the configuration stage, the choice method of selecting material for main evaporator vessel, tube, tube plates, water boxes, pipework, and valves for multistage flash distillation will be described. The choice of selecting material for MSF is base on economical consideration, cheap, high resistance and easy to be maintained

  14. Estimation of Single-Crystal Elastic Constants of Polycrystalline Materials from Back-Scattered Grain Noise

    International Nuclear Information System (INIS)

    Haldipur, P.; Margetan, F. J.; Thompson, R. B.

    2006-01-01

    Single-crystal elastic stiffness constants are important input parameters for many calculations in material science. There are well established methods to measure these constants using single-crystal specimens, but such specimens are not always readily available. The ultrasonic properties of metal polycrystals, such as velocity, attenuation, and backscattered grain noise characteristics, depend in part on the single-crystal elastic constants. In this work we consider the estimation of elastic constants from UT measurements and grain-sizing data. We confine ourselves to a class of particularly simple polycrystalline microstructures, found in some jet-engine Nickel alloys, which are single-phase, cubic, equiaxed, and untextured. In past work we described a method to estimate the single-crystal elastic constants from measured ultrasonic velocity and attenuation data accompanied by metallographic analysis of grain size. However, that methodology assumes that all attenuation is due to grain scattering, and thus is not valid if appreciable absorption is present. In this work we describe an alternative approach which uses backscattered grain noise data in place of attenuation data. Efforts to validate the method using a pure copper specimen are discussed, and new results for two jet-engine Nickel alloys are presented

  15. A single Markov-type kinetic model accounting for the macroscopic currents of all human voltage-gated sodium channel isoforms.

    Science.gov (United States)

    Balbi, Pietro; Massobrio, Paolo; Hellgren Kotaleski, Jeanette

    2017-09-01

    Modelling ionic channels represents a fundamental step towards developing biologically detailed neuron models. Until recently, the voltage-gated ion channels have been mainly modelled according to the formalism introduced by the seminal works of Hodgkin and Huxley (HH). However, following the continuing achievements in the biophysical and molecular comprehension of these pore-forming transmembrane proteins, the HH formalism turned out to carry limitations and inconsistencies in reproducing the ion-channels electrophysiological behaviour. At the same time, Markov-type kinetic models have been increasingly proven to successfully replicate both the electrophysiological and biophysical features of different ion channels. However, in order to model even the finest non-conducting molecular conformational change, they are often equipped with a considerable number of states and related transitions, which make them computationally heavy and less suitable for implementation in conductance-based neurons and large networks of those. In this purely modelling study we develop a Markov-type kinetic model for all human voltage-gated sodium channels (VGSCs). The model framework is detailed, unifying (i.e., it accounts for all ion-channel isoforms) and computationally efficient (i.e. with a minimal set of states and transitions). The electrophysiological data to be modelled are gathered from previously published studies on whole-cell patch-clamp experiments in mammalian cell lines heterologously expressing the human VGSC subtypes (from NaV1.1 to NaV1.9). By adopting a minimum sequence of states, and using the same state diagram for all the distinct isoforms, the model ensures the lightest computational load when used in neuron models and neural networks of increasing complexity. The transitions between the states are described by original ordinary differential equations, which represent the rate of the state transitions as a function of voltage (i.e., membrane potential). The

  16. Gating of the two-pore cation channel AtTPC1 in the plant vacuole is based on a single voltage-sensing domain.

    Science.gov (United States)

    Jaślan, D; Mueller, T D; Becker, D; Schultz, J; Cuin, T A; Marten, I; Dreyer, I; Schönknecht, G; Hedrich, R

    2016-09-01

    The two-pore cation channel TPC1 operates as a dimeric channel in animal and plant endomembranes. Each subunit consists of two homologous Shaker-like halves, with 12 transmembrane domains in total (S1-S6, S7-S12). In plants, TPC1 channels reside in the vacuolar membrane, and upon voltage stimulation, give rise to the well-known slow-activating SV currents. Here, we combined bioinformatics, structure modelling, site-directed mutagenesis, and in planta patch clamp studies to elucidate the molecular mechanisms of voltage-dependent channel gating in TPC1 in its native plant background. Structure-function analysis of the Arabidopsis TPC1 channel in planta confirmed that helix S10 operates as the major voltage-sensing site, with Glu450 and Glu478 identified as possible ion-pair partners for voltage-sensing Arg537. The contribution of helix S4 to voltage sensing was found to be negligible. Several conserved negative residues on the luminal site contribute to calcium binding, stabilizing the closed channel. During evolution of plant TPC1s from two separate Shaker-like domains, the voltage-sensing function in the N-terminal Shaker-unit (S1-S4) vanished. © 2016 German Botanical Society and The Royal Botanical Society of the Netherlands.

  17. Single-nary philosophy for non-linear study of mechanics of materials

    International Nuclear Information System (INIS)

    Tran, C.

    2005-01-01

    Non-linear study of mechanics of materials is formulated in this paper as a problem of meta-intelligent system analysis. Non-linearity will be singled out as an important concept for understanding of high-order complex systems. Through single-nary thinking, which will be represented in this work, we introduce a modification of Aristotelian philosophy using modal logic and multi-valued logic (these logics we call 'high-order' logic). Next, non-linear cause - effect relations are expressed through non-additive measures and multiple-information aggregation principles based on fuzzy integration. The study of real time behaviors, required experiences and intuition, will be realized using truth measures (non-additive measures) and a procedure for information processing in intelligence levels. (author)

  18. Quantum gate decomposition algorithms.

    Energy Technology Data Exchange (ETDEWEB)

    Slepoy, Alexander

    2006-07-01

    Quantum computing algorithms can be conveniently expressed in a format of a quantum logical circuits. Such circuits consist of sequential coupled operations, termed ''quantum gates'', or quantum analogs of bits called qubits. We review a recently proposed method [1] for constructing general ''quantum gates'' operating on an qubits, as composed of a sequence of generic elementary ''gates''.

  19. Magnetically controlled multifrequency invisibility cloak with a single shell of ferrite material

    Science.gov (United States)

    Wang, Xiaohua; Liu, Youwen

    2015-02-01

    A magnetically controlled multifrequency invisibility cloak with a single shell of the isotropic and homogeneous ferrite material has been investigated based on the scattering cancellation method from the Mie scattering theory. The analytical and simulated results have demonstrated that such this shell can drastically reduce the total scattering cross-section of this cloaking system at multiple frequencies. These multiple cloaking frequencies of this shell can be externally controlled since the magnetic permeability of ferrites is well tuned by the applied magnetic field. This may provide a potential way to design a tunable multifrequency invisibility cloak with considerable flexibility.

  20. Reversible control of magnetic interactions by electric field in a single-phase material.

    Science.gov (United States)

    Ryan, P J; Kim, J-W; Birol, T; Thompson, P; Lee, J-H; Ke, X; Normile, P S; Karapetrova, E; Schiffer, P; Brown, S D; Fennie, C J; Schlom, D G

    2013-01-01

    Intrinsic magnetoelectric coupling describes the interaction between magnetic and electric polarization through an inherent microscopic mechanism in a single-phase material. This phenomenon has the potential to control the magnetic state of a material with an electric field, an enticing prospect for device engineering. Here, we demonstrate 'giant' magnetoelectric cross-field control in a tetravalent titanate film. In bulk form, EuTiO(3), is antiferromagnetic. However, both anti and ferromagnetic interactions coexist between different nearest europium neighbours. In thin epitaxial films, strain was used to alter the relative strength of the magnetic exchange constants. We not only show that moderate biaxial compression precipitates local magnetic competition, but also demonstrate that the application of an electric field at this strain condition switches the magnetic ground state. Using first-principles density functional theory, we resolve the underlying microscopic mechanism resulting in G-type magnetic order and illustrate how it is responsible for the 'giant' magnetoelectric effect.

  1. Formation of Micro and Mesoporous Amorphous Silica-Based Materials from Single Source Precursors

    Directory of Open Access Journals (Sweden)

    Mohd Nazri Mohd Sokri

    2016-03-01

    Full Text Available Polysilazanes functionalized with alkoxy groups were designed and synthesized as single source precursors for fabrication of micro and mesoporous amorphous silica-based materials. The pyrolytic behaviors during the polymer to ceramic conversion were studied by the simultaneous thermogravimetry-mass spectrometry (TG-MS analysis. The porosity of the resulting ceramics was characterized by the N2 adsorption/desorption isotherm measurements. The Fourier transform infrared spectroscopy (FT-IR and Raman spectroscopic analyses as well as elemental composition analysis were performed on the polymer-derived amorphous silica-based materials, and the role of the alkoxy group as a sacrificial template for the micro and mesopore formations was discussed from a viewpoint to establish novel micro and mesoporous structure controlling technologies through the polymer-derived ceramics (PDCs route.

  2. Origin of yellow emission in white OLED with single emitting material

    Energy Technology Data Exchange (ETDEWEB)

    Akimoto, Ikuko; Tsuzuki, Sayaka; Uzawa, Hidetoshi; Hinatsu, Masako; Nishide, Yosuke; Osuga, Hideji; Sakamoto, Hidefumi [Faculty of Systems Engineering, Wakayama University, Sakaedani 930, Wakayama 640-8510 (Japan)

    2011-01-15

    The photo-luminescence (PL) and electro-luminescence (EL) of a novel organic material, benzodithiophene/triphenylamine copolymer (P-PBTx, n=5-6) were investigated. The PL exhibited wide blue emission at room temperature, which is attributed to fluorescence from a chromophore, benzodithiophene moiety, from results of spectral analysis and decay profile. The EL, however, exhibited white emission consisting of wide blue (B) and yellow (Y) bands, although it was prepared with P-PBTx as a single emitting material. The Y-band was slightly observed at 7 K and found to possess long lived component of 19 ms lifetime. The origin of the Y-band efficiently stimulated by carrier injection is supposed to be a charge-transfer state between benzodithiophene and triphenylamine moieties. The long lived component could be explained by lowered transition probability caused by charge separation. (copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

  3. Ballistic transport of graphene pnp junctions with embedded local gates

    International Nuclear Information System (INIS)

    Nam, Seung-Geol; Ki, Dong-Keun; Kim, Youngwook; Kim, Jun Sung; Lee, Hu-Jong; Park, Jong Wan

    2011-01-01

    We fabricated graphene pnp devices, by embedding pre-defined local gates in an oxidized surface layer of a silicon substrate. With neither deposition of dielectric material on the graphene nor electron-beam irradiation, we obtained high-quality graphene pnp devices without degradation of the carrier mobility even in the local-gate region. The corresponding increased mean free path leads to the observation of ballistic and phase-coherent transport across a local gate 130 nm wide, which is about an order of magnitude wider than reported previously. Furthermore, in our scheme, we demonstrated independent control of the carrier density in the local-gate region, with a conductance map very much distinct from those of top-gated devices. This was caused by the electric field arising from the global back gate being strongly screened by the embedded local gate. Our scheme allows the realization of ideal multipolar graphene junctions with ballistic carrier transport.

  4. Electrical and materials properties of AlN/ HfO{sub 2} high-k stack with a metal gate

    Energy Technology Data Exchange (ETDEWEB)

    Reid, Kimberly G. [Tokyo Electron U.S., 14338 FM 1826, Austin, TX 78737 (United States)], E-mail: kim@ireid.com; Dip, Anthony [Tokyo Electron U.S., 2400 Grove Blvd., Austin, TX 78747 (United States)], E-mail: anthony.dip@us.tel.com; Sasaki, Sadao [Tokyo Electron U.S. (United States)], E-mail: Sadao.sasaki@us.tel.com; Triyoso, Dina [Freescale Semiconductor Inc., 3501 Ed Bluestein Blvd, Austin, TX 78721 (United States)], E-mail: Dina.Triyoso@freescale.com; Samavedam, Sri [Freescale Semiconductor Inc., 3501 Ed Bluestein Blvd, Austin, TX 78721 (United States)], E-mail: Sri.Samavedam@freescale.com; Gilmer, David [SEMATECH 2706 Montopolis Drive, Austin, TX 78741 (United States)], E-mail: David.Gilmer@sematech.org; Gondran, Carolyn F.H. [Process Characterization Laboratory, ATDF/SEMATECH, 2706 Montopolis Drive, Austin, Texas 78741 (United States)], E-mail: Carolyn.Gondran@atdf.com

    2009-02-27

    In this study, aluminum nitride (AlN) was grown by molecular layer deposition on HfO{sub 2} that had been deposited on 200 mm Si (100) substrates. The AlN was grown on HfO{sub 2} using sequential exposures of trimethyl-aluminum and ammonia (NH{sub 3}) in a batch vertical furnace. Excellent thickness uniformity on test wafers from the top of the furnace to the bottom of the furnace (across the furnace load) was obtained. The equivalent oxide thickness was 16.5-18.8 A for the AlN/HfO{sub 2} stack on patterned device wafers with a molybdenum oxynitride metal gate with leakage current densities from low 10{sup -5} to mid 10{sup -6} A/cm{sup 2} at threshold voltage minus one volt. There was no change in the work function with the AlN cap on HfO{sub 2} with the MoN metal gate, even with a 1000 deg. C anneal.

  5. Accuracy and Consistency of Respiratory Gating in Abdominal Cancer Patients

    International Nuclear Information System (INIS)

    Ge, Jiajia; Santanam, Lakshmi; Yang, Deshan; Parikh, Parag J.

    2013-01-01

    Purpose: To evaluate respiratory gating accuracy and intrafractional consistency for abdominal cancer patients treated with respiratory gated treatment on a regular linear accelerator system. Methods and Materials: Twelve abdominal patients implanted with fiducials were treated with amplitude-based respiratory-gated radiation therapy. On the basis of daily orthogonal fluoroscopy, the operator readjusted the couch position and gating window such that the fiducial was within a setup margin (fiducial-planning target volume [f-PTV]) when RPM indicated “beam-ON.” Fifty-five pre- and post-treatment fluoroscopic movie pairs with synchronized respiratory gating signal were recorded. Fiducial motion traces were extracted from the fluoroscopic movies using a template matching algorithm and correlated with f-PTV by registering the digitally reconstructed radiographs with the fluoroscopic movies. Treatment was determined to be “accurate” if 50% of the fiducial area stayed within f-PTV while beam-ON. For movie pairs that lost gating accuracy, a MATLAB program was used to assess whether the gating window was optimized, the external-internal correlation (EIC) changed, or the patient moved between movies. A series of safety margins from 0.5 mm to 3 mm was added to f-PTV for reassessing gating accuracy. Results: A decrease in gating accuracy was observed in 44% of movie pairs from daily fluoroscopic movies of 12 abdominal patients. Three main causes for inaccurate gating were identified as change of global EIC over time (∼43%), suboptimal gating setup (∼37%), and imperfect EIC within movie (∼13%). Conclusions: Inconsistent respiratory gating accuracy may occur within 1 treatment session even with a daily adjusted gating window. To improve or maintain gating accuracy during treatment, we suggest using at least a 2.5-mm safety margin to account for gating and setup uncertainties

  6. Dual-gated volumetric modulated arc therapy

    International Nuclear Information System (INIS)

    Fahimian, Benjamin; Wu, Junqing; Wu, Huanmei; Geneser, Sarah; Xing, Lei

    2014-01-01

    Gated Volumetric Modulated Arc Therapy (VMAT) is an emerging radiation therapy modality for treatment of tumors affected by respiratory motion. However, gating significantly prolongs the treatment time, as delivery is only activated during a single respiratory phase. To enhance the efficiency of gated VMAT delivery, a novel dual-gated VMAT (DG-VMAT) technique, in which delivery is executed at both exhale and inhale phases in a given arc rotation, is developed and experimentally evaluated. Arc delivery at two phases is realized by sequentially interleaving control points consisting of MUs, MLC sequences, and angles of VMAT plans generated at the exhale and inhale phases. Dual-gated delivery is initiated when a respiration gating signal enters the exhale window; when the exhale delivery concludes, the beam turns off and the gantry rolls back to the starting position for the inhale window. The process is then repeated until both inhale and exhale arcs are fully delivered. DG-VMAT plan delivery accuracy was assessed using a pinpoint chamber and diode array phantom undergoing programmed motion. DG-VMAT delivery was experimentally implemented through custom XML scripting in Varian’s TrueBeam™ STx Developer Mode. Relative to single gated delivery at exhale, the treatment time was improved by 95.5% for a sinusoidal breathing pattern. The pinpoint chamber dose measurement agreed with the calculated dose within 0.7%. For the DG-VMAT delivery, 97.5% of the diode array measurements passed the 3%/3 mm gamma criterion. The feasibility of DG-VMAT delivery scheme has been experimentally demonstrated for the first time. By leveraging the stability and natural pauses that occur at end-inspiration and end-exhalation, DG-VMAT provides a practical method for enhancing gated delivery efficiency by up to a factor of two

  7. GATE V6: a major enhancement of the GATE simulation platform enabling modelling of CT and radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Jan, S; Becheva, E [DSV/I2BM/SHFJ, Commissariat a l' Energie Atomique, Orsay (France); Benoit, D; Rehfeld, N; Stute, S; Buvat, I [IMNC-UMR 8165 CNRS-Paris 7 and Paris 11 Universities, 15 rue Georges Clemenceau, 91406 Orsay Cedex (France); Carlier, T [INSERM U892-Cancer Research Center, University of Nantes, Nantes (France); Cassol, F; Morel, C [Centre de physique des particules de Marseille, CNRS-IN2P3 and Universite de la Mediterranee, Aix-Marseille II, 163, avenue de Luminy, 13288 Marseille Cedex 09 (France); Descourt, P; Visvikis, D [INSERM, U650, Laboratoire du Traitement de l' Information Medicale (LaTIM), CHU Morvan, Brest (France); Frisson, T; Grevillot, L; Guigues, L; Sarrut, D; Zahra, N [Universite de Lyon, CREATIS, CNRS UMR5220, Inserm U630, INSA-Lyon, Universite Lyon 1, Centre Leon Berard (France); Maigne, L; Perrot, Y [Laboratoire de Physique Corpusculaire, 24 Avenue des Landais, 63177 Aubiere Cedex (France); Schaart, D R [Delft University of Technology, Radiation Detection and Medical Imaging, Mekelweg 15, 2629 JB Delft (Netherlands); Pietrzyk, U, E-mail: buvat@imnc.in2p3.fr [Reseach Center Juelich, Institute of Neurosciences and Medicine and Department of Physics, University of Wuppertal (Germany)

    2011-02-21

    GATE (Geant4 Application for Emission Tomography) is a Monte Carlo simulation platform developed by the OpenGATE collaboration since 2001 and first publicly released in 2004. Dedicated to the modelling of planar scintigraphy, single photon emission computed tomography (SPECT) and positron emission tomography (PET) acquisitions, this platform is widely used to assist PET and SPECT research. A recent extension of this platform, released by the OpenGATE collaboration as GATE V6, now also enables modelling of x-ray computed tomography and radiation therapy experiments. This paper presents an overview of the main additions and improvements implemented in GATE since the publication of the initial GATE paper (Jan et al 2004 Phys. Med. Biol. 49 4543-61). This includes new models available in GATE to simulate optical and hadronic processes, novelties in modelling tracer, organ or detector motion, new options for speeding up GATE simulations, examples illustrating the use of GATE V6 in radiotherapy applications and CT simulations, and preliminary results regarding the validation of GATE V6 for radiation therapy applications. Upon completion of extensive validation studies, GATE is expected to become a valuable tool for simulations involving both radiotherapy and imaging.

  8. Improved performance of nanoscale junctionless tunnel field-effect transistor based on gate engineering approach

    Science.gov (United States)

    Molaei Imen Abadi, Rouzbeh; Sedigh Ziabari, Seyed Ali

    2016-11-01

    In this paper, a first qualitative study on the performance characteristics of dual-work function gate junctionless TFET (DWG-JLTFET) on the basis of energy band profile modulation is investigated. A dual-work function gate technique is used in a JLTFET in order to create a downward band bending on the source side similar to PNPN structure. Compared with the single-work function gate junctionless TFET (SWG-JLTFET), the numerical simulation results demonstrated that the DWG-JLTFET simultaneously optimizes the ON-state current, the OFF-state leakage current, and the threshold voltage and also improves average subthreshold slope. It is illustrated that if appropriate work functions are selected for the gate materials on the source side and the drain side, the JLTFET exhibits a considerably improved performance. Furthermore, the optimization design of the tunnel gate length ( L Tun) for the proposed DWG-JLTFET is studied. All the simulations are done in Silvaco TCAD for a channel length of 20 nm using the nonlocal band-to-band tunneling (BTBT) model.

  9. Rapid gated Thallium-201 perfusion SPECT - clinically feasible?

    International Nuclear Information System (INIS)

    Wadhwa, S.S.; Mansberg, R.; Fernandes, V.B.; Wilkinson, D.; Abatti, D.

    1998-01-01

    Full text: Standard dose energy window optimised Thallium-201 (Tl-201) SPECT has about half the counts of a standard dose from Technetium-99m Sestamibi (Tc99m-Mibi) gated perfusion SPECT. This study investigates the clinical feasibility of rapid energy window optimised Tl-201 gated perfusion SPECT (gated-TI) and compares quantitative left ventricular ejection fraction (LVEF) and visually assessed image quality for wall motion and thickening to analogous values obtained from Tc99m-Mibi gated perfusion SPECT (gated - mibi). Methods: We studied 60 patients with a rest gated Tl-201 SPECT (100 MBq, 77KeV peak, 34% window, 20 sec/projection) followed by a post stress gated Sestamibi SPECT (1GBq, 140KeV, 20% window, 20 sec/projection) separate dual isotope protocol. LVEF quantitation was performed using commercially available software (SPECTEF, General Electric). Visual grading of image quality for wall thickening and motion was performed using a three-point scale (excellent, good and poor). Results: LVEF for gated Tl-201 SPECT was 59.6 ± 12.0% (Mean ± SD). LVEF for gated Sestamibi SPECT was 60.4 ±11.4% (Mean ± SD). These were not significantly different (P=0.27, T-Test). There was good correlation (r=0.9) between gated-TI and gated-mibi LVEF values. The quality of gated-Tl images was ranked as excellent, good and poor in 12, 50 and 38% of the patients respectively. Image quality was better in gated-mibi SPECT, with ratings of 12, 62 and 26% respectively. Conclusion: Rapid gated Thallium-201 acquisition with energy window optimisation can be effectively performed on majority of patients and offers the opportunity to assess not only myocardial perfusion and function, as with Technetium based agents, but also viability using a single day one isotope protocol

  10. Single potential electrodeposition of nanostructured battery materials for lithium-ion batteries

    Science.gov (United States)

    Mosby, James Matthew

    different sizes, shapes, and surface areas. This is advantageous because high surface area materials benefit from improved kinetics for solid state transformations and from decreases in mechanical degradation that occurs during the lithiation and delithiation of battery materials. Intermetallic materials are an alternative to conventional anode materials because they have high capacities and react reversibly with lithium at potentials that hinder the dendrite formation of metallic lithium. Unfortunately, the volume expansion associated with the lithiation and delithiation of intermetallic materials is usually large (over 300%). With this in mind a procedure for the electrodeposition of Cu2Sb from aqueous solutions was developed and is presented in this thesis. Cu2Sb is an intermetallic that lithiates at potentials more positive than the potential needed to plate lithium metal, and has a volume expansion less than 100%. Electrodeposition of an intermetallic with a relatively small volume expansion and with high surface area morphology should dramatically reduce material degradation during battery cycling, thus promoting the life of the material. To electrodeposit Cu2Sb from aqueous solutions, soluble salts of Cu2+ and Sb3+ were needed. There are many Cu2+ salts that are highly soluble in water, but most Sb 3+ salts cause formation of Sb2O3 in aqueous solutions. To obtain Sb3+ in aqueous solutions, citric acid was used as a complexing agent. The results presented in this dissertation show that solution speciation plays an important role in the electrochemistry of aqueous citrate solutions of both copper and antimony. The cyclic voltammograms (CVs) presented here show that the reduction potential of Cu2+ shifted in the negative direction and the reduction potential of Sb 3+ shifted in the positive direction with an increase in pH. Also, Cu2Sb films were deposited at a single potential (-1050 mV vs. SSCE) from aqueous solutions at pH 6. We determined that the deposition

  11. Design and synthesis of single-source molecular precursors to homogeneous multi-component oxide materials

    Science.gov (United States)

    Fujdala, Kyle Lee

    This dissertation describes the syntheses of single-source molecular precursors to multi-component oxide materials. These molecules possess a core metal or element with various combinations of -OSi(O tBu)3, -O2P(OtBu) 2, and -OB[OSi(OtBu)3] 2 ligands. Such molecules decompose under mild thermolytic conditions (models for oxide-supported metal species and multi-component oxides. Significantly, the first complexes to contain three or more heteroelements suitable for use in the TMP method have been synthesized. Compounds for use as single-source molecular precursors have been synthesized containing Al, B, Cr, Hf, Mo, V, W, and Zr, and their thermal transformations have been examined. Heterogeneous catalytic reactions have been examined for selected materials. Also, cothermolyses of molecular precursors and additional molecules (i.e., metal alkoxides) have been utilized to provide materials with several components for potential use as catalysts or catalyst supports. Reactions of one and two equivs of HOSi(OtBu) 3 with Cr(OtBu)4 afforded the first Cr(IV) alkoxysiloxy complexes (tBuO) 3CrOSi(OtBu)3 and ( tBuO)2Cr[OSi(OtBu) 3]2, respectively. The high-yielding, convenient synthesis of (tBuO)3CrOSi(O tBu)3 make this complex a useful single-source molecular precursor, via the TMP method, to Cr/Si/O materials. The thermal transformations of (tBuO)3CrOSi(O tBu)3 and (tBuO) 2Cr[OSi(OtBu)3]2 to chromia-silica materials occurr at low temperatures (≤180°C), to give isobutene as the major carbon-containing product. The material generated from the solid-state conversion of (tBuO) 3CrOSi(OtBu)3 (CrOS ss) has an unexpectedly high surface area of 315 m2 g-1 that is slightly reduced to 275 m2 g-1 after calcination at 500°C in O2. The xerogel obtained by the thermolysis of an n-octane solution of (tBuO)3CrOSi(O tBu)3 (CrOSixg) has a surface area of 315 m2 g-1 that is reduced to 205 m2 g-1 upon calcination at 500°C. Powder X-ray diffraction (PXRD) analysis revealed that Cr2O 3 is

  12. A self-aligned gate definition process with submicron gaps

    NARCIS (Netherlands)

    Warmerdam, L.F.P.; Aarnink, Antonius A.I.; Holleman, J.; Wallinga, Hans

    1989-01-01

    A self-aligned gate definition process is proposed. Spacings between adjacent gates of 0.5 µm and smaller are fabricated. The spacing is realized by an edge-etch technique, combined with anisotropic plasma etching of the single poly-silicon layer. Straight gaps with minor width variation are

  13. Angle-resolved imaging of single-crystal materials with MeV helium ions

    Energy Technology Data Exchange (ETDEWEB)

    Strathman, M D; Baumann, S [Charles Evans and Associates, Redwood City, CA (United States)

    1992-02-01

    The simplest form of angle-resolved mapping for single-crystal materials is the creation of a channeling angular scan. Several laboratories have expanded this simple procedure to include mapping as a function of two independent tilts. These angle-resolved images are particularly suited to the assessment of crystal parameters including disorder, lattice location of impurities, and lattice stress. This paper will describe the use of the Charles Evans and Associates RBS-400 scattering chamber for acquisition, display, and analysis of angle-resolved images obtained from backscattered helium ions. Typical data acquisition times are 20 min for a {+-}2deg X-Y tilt scan with 2500 pixels (8/100deg resolution), and 10 nC per pixel. In addition, we will present a method for automatically aligning crystals for channeling measurements based on this imaging technology. (orig.).

  14. Single- and multi-pulse femtosecond laser ablation of optical filter materials

    International Nuclear Information System (INIS)

    Krueger, J.; Lenzner, M.; Martin, S.; Lenner, M.; Spielmann, C.; Fiedler, A.; Kautek, W.

    2003-01-01

    Ablation experiments employing Ti:sapphire laser pulses with durations from 30 to 340 fs (centre wavelength 800 nm, repetition rate 1 kHz) were performed in air. Absorbing filters (Schott BG18 and BG36) served as targets. The direct focusing technique was used under single- and multi-pulse irradiation conditions. Ablation threshold fluences were determined from a semi-logarithmic plot of the ablation crater diameter versus laser fluence. The threshold fluence decreases for a shorter pulse duration and an increasing number of pulses. The multi-pulse ablation threshold fluences are similar to those of undoped glass material (∼1 J cm -2 ). That means that the multi-pulse ablation threshold is independent on the doping level of the filters. For more than 100 pulses per spot and all pulse durations applied, the threshold fluence is practically constant. This leads to technically relevant ablation threshold values

  15. Angle-resolved imaging of single-crystal materials with MeV helium ions

    International Nuclear Information System (INIS)

    Strathman, M.D.; Baumann, S.

    1992-01-01

    The simplest form of angle-resolved mapping for single-crystal materials is the creation of a channeling angular scan. Several laboratories have expanded this simple procedure to include mapping as a function of two independent tilts. These angle-resolved images are particularly suited to the assessment of crystal parameters including disorder, lattice location of impurities, and lattice stress. This paper will describe the use of the Charles Evans and Associates RBS-400 scattering chamber for acquisition, display, and analysis of angle-resolved images obtained from backscattered helium ions. Typical data acquisition times are 20 min for a ±2deg X-Y tilt scan with 2500 pixels (8/100deg resolution), and 10 nC per pixel. In addition, we will present a method for automatically aligning crystals for channeling measurements based on this imaging technology. (orig.)

  16. Fatigue crack growth behaviour of carbon steel piping material subjected to single overload/under-load

    International Nuclear Information System (INIS)

    Arora, Punit; Tripathi, R.; Singh, P.K.; Bhasin, V.; Vijayan, P.K.

    2016-01-01

    The objective of the present study is to understand the Fatigue Crack Growth Rate (FCGR) behaviour after single over-load/ under-load event on carbon steel piping material. The tests have been carried out on standard Compact Tension (CT) specimens. The effect of different crack length to width ratio (a/W) of specimen and overload/under-load ratios on FCGR have been studied. The studies have shown significant reduction in FCG rate after overload event. The strain field has been measured using Digital Image Correlation (DIC) technique ahead of the crack tip to quantify the plastic zone size due to overload and constant amplitude load. In addition, plastic zone calculations have also been carried out using 3D finite element analyses for the prediction of post overload FCGR/ life. The predicted FCGR are in agreement with experimentally determined FCGR. (author)

  17. Broadband one-dimensional photonic crystal wave plate containing single-negative materials.

    Science.gov (United States)

    Chen, Yihang

    2010-09-13

    The properties of the phase shift of wave reflected from one-dimensional photonic crystals consisting of periodic layers of single-negative (permittivity- or permeability-negative) materials are demonstrated. As the incident angle increases, the reflection phase shift of TE wave decreases, while that of TM wave increases. The phase shifts of both polarized waves vary smoothly as the frequency changes across the photonic crystal stop band. Consequently, the difference between the phase shift of TE and that of TM wave could remain constant in a rather wide frequency range inside the stop band. These properties are useful to design wave plate or retarder which can be used in wide spectral band. In addition, a broadband photonic crystal quarter-wave plate is proposed.

  18. High-throughput analysis of amino acids in plant materials by single quadrupole mass spectrometry

    DEFF Research Database (Denmark)

    Dahl-Lassen, Rasmus; van Hecke, Jan Julien Josef; Jørgensen, Henning

    2018-01-01

    that it is very time consuming with typical chromatographic run times of 70 min or more. Results: We have here developed a high-throughput method for analysis of amino acid profiles in plant materials. The method combines classical protein hydrolysis and derivatization with fast separation by UHPLC and detection...... reducing the overall analytical costs compared to methods based on more advanced mass spectrometers....... by a single quadrupole (QDa) mass spectrometer. The chromatographic run time is reduced to 10 min and the precision, accuracy and sensitivity of the method are in line with other recent methods utilizing advanced and more expensive mass spectrometers. The sensitivity of the method is at least a factor 10...

  19. The effect of binary oxide materials on a single droplet vapor explosion triggering

    International Nuclear Information System (INIS)

    Hansson, R.C.; Manickam, L.T.; Dinh, T.N.

    2011-01-01

    In order to explore the fundamental mechanism dictated by the material influence on triggering, fine fragmentation and subsequent vapor explosion energetics, a series of experiments using a mixture of eutectic and non-eutectic binary oxide were initiated. Dynamics of the hot liquid (WO 3 -CaO) droplet and the volatile liquid (water) were investigated in the MISTEE (Micro-Interactions in Steam Explosion Experiments) facility by performing well-controlled, externally triggered, single-droplet experiments, using a high-speed visualization system with synchronized digital cinematography and continuous X-ray radiography, called SHARP (Simultaneous High-speed Acquisition of X-ray Radiography and Photography). The acquired images followed by further analysis showed a milder interaction for the non-eutectic melt composition for the tests with low melt superheat, whether no evident differences between eutectic and non-eutectic melt compositions regarding bubble dynamics, energetics and melt preconditioning was perceived for the high melt superheat tests. (author)

  20. Error-Transparent Quantum Gates for Small Logical Qubit Architectures

    Science.gov (United States)

    Kapit, Eliot

    2018-02-01

    One of the largest obstacles to building a quantum computer is gate error, where the physical evolution of the state of a qubit or group of qubits during a gate operation does not match the intended unitary transformation. Gate error stems from a combination of control errors and random single qubit errors from interaction with the environment. While great strides have been made in mitigating control errors, intrinsic qubit error remains a serious problem that limits gate fidelity in modern qubit architectures. Simultaneously, recent developments of small error-corrected logical qubit devices promise significant increases in logical state lifetime, but translating those improvements into increases in gate fidelity is a complex challenge. In this Letter, we construct protocols for gates on and between small logical qubit devices which inherit the parent device's tolerance to single qubit errors which occur at any time before or during the gate. We consider two such devices, a passive implementation of the three-qubit bit flip code, and the author's own [E. Kapit, Phys. Rev. Lett. 116, 150501 (2016), 10.1103/PhysRevLett.116.150501] very small logical qubit (VSLQ) design, and propose error-tolerant gate sets for both. The effective logical gate error rate in these models displays superlinear error reduction with linear increases in single qubit lifetime, proving that passive error correction is capable of increasing gate fidelity. Using a standard phenomenological noise model for superconducting qubits, we demonstrate a realistic, universal one- and two-qubit gate set for the VSLQ, with error rates an order of magnitude lower than those for same-duration operations on single qubits or pairs of qubits. These developments further suggest that incorporating small logical qubits into a measurement based code could substantially improve code performance.

  1. Single-Photon Ionization Soft-X-Ray Laser Mass Spectrometry of Potential Hydrogen Storage Materials

    Science.gov (United States)

    Dong, F.; Bernstein, E. R.; Rocca, J. J.

    A desk-top size capillary discharge 46.9 nm lasear is applied in the gas phase study of nanoclusters. The high photon energy allows for single-photon ionization mass spectrometry with reduced cluster fragmentation. In the present studies, neutral Al m C n and Al m C n H x cluster are investigation for the first time. Single photon ionization through 46.9 nm, 118 nm, 193 nm lasers is used to detect neutral cluster distributions through time of flight mass spectrometry. Al m C n clusters are generated through laser ablation of a mixture of Al and C powders pressed into a disk. An oscillation of the vertical ionization energies (VIEs) of Al m C n clusters is observed in the experiments. The VIEs of Al m C n clusters changes as a function of the numbers of Al and C atoms in the clusters. Al m C n H x clusters are generated through an Al ablation plasma-hydrocarbon reaction, an Al-C ablation plasma reacting with H2 gas, or through cold Al m C n clusters reacting with H2 gas in a fast flow reactor. DFT and ab inito calculations are carried out to explore the structures, IEs, and electronic structures of Al m C n H x clusters. C=C bonds are favored for the lowest energy structures for Al m C n clusters. Be m C n H x are generated through a beryllium ablation plasma-hydrocarbon reaction and detected by single photon ionization of 193 nm laser. Both Al m C n H x and Be m C n H x are considered as potential hydrogen storage materials.

  2. Probability of cavitation for single ultrasound pulses applied to tissues and tissue-mimicking materials.

    Science.gov (United States)

    Maxwell, Adam D; Cain, Charles A; Hall, Timothy L; Fowlkes, J Brian; Xu, Zhen

    2013-03-01

    In this study, the negative pressure values at which inertial cavitation consistently occurs in response to a single, two-cycle, focused ultrasound pulse were measured in several media relevant to cavitation-based ultrasound therapy. The pulse was focused into a chamber containing one of the media, which included liquids, tissue-mimicking materials, and ex vivo canine tissue. Focal waveforms were measured by two separate techniques using a fiber-optic hydrophone. Inertial cavitation was identified by high-speed photography in optically transparent media and an acoustic passive cavitation detector. The probability of cavitation (P(cav)) for a single pulse as a function of peak negative pressure (p(-)) followed a sigmoid curve, with the probability approaching one when the pressure amplitude was sufficient. The statistical threshold (defined as P(cav) = 0.5) was between p(-) = 26 and 30 MPa in all samples with high water content but varied between p(-) = 13.7 and >36 MPa in other media. A model for radial cavitation bubble dynamics was employed to evaluate the behavior of cavitation nuclei at these pressure levels. A single bubble nucleus with an inertial cavitation threshold of p(-) = 28.2 megapascals was estimated to have a 2.5 nm radius in distilled water. These data may be valuable for cavitation-based ultrasound therapy to predict the likelihood of cavitation at various pressure levels and dimensions of cavitation-induced lesions in tissue. Copyright © 2013 World Federation for Ultrasound in Medicine & Biology. Published by Elsevier Inc. All rights reserved.

  3. Optical XOR gate

    Science.gov (United States)

    Vawter, G. Allen

    2013-11-12

    An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

  4. Transport properties of a potassium-doped single-wall carbon nanotube rope

    International Nuclear Information System (INIS)

    Lee, R. S.; Kim, H. J.; Fischer, J. E.; Lefebvre, J.; Radosavljevic, M.; Hone, J.; Johnson, A. T.

    2000-01-01

    Four-probe resistance vs temperature and gate voltage are reported for an individual single-wall carbon nanotube rope before and after doping in situ with potassium. All the features in R(T) from unoriented bulk material, before and after doping, are qualitatively reproduced by the rope data. The 5.3 K conductance of the pristine rope decreases with positive gate voltage, while G vs V g becomes featureless after K doping. (c) 2000 The American Physical Society

  5. Geometry in Biomimetic Network: Double Gyroid to Pseudo-Single Gyroid in Nanohybrid Materials

    Science.gov (United States)

    Hsueh, Han-Yu; Ho, Rong-Ming; Hung, Yu-Chueh; Ling, Yi-Chun; Hasegawa, Hirokazu

    2013-03-01

    Biological systems have developed delicately arranged micro- and architectures to produce striking optical effects since millions of years ago. Inspired by the textures of butterfly wings with single gyroid (SG) structure, herein, we aim to fabricate biocompatible and robust materials with SG-like structure in nanometer size so as to give new materials with unprecedented optical properties for applications. Biommicking from the biological photonic structures of butterfly wings, a double gyroid (DG) structure in nanometer size is obtained from the self-assembly of polystyrene-b-poly(L-lactide) (PS-PLLA). To acquire robust backbone networks, inorganic networks in polymer matrix are fabricated by using the hydrolyzed PS-PLLA with DG structure as a template for sol-gel reaction. Owing to the soft polymer matrix, two co-continuous inorganic networks embedded in the polymer matrix can be rearranged by thermal annealing at temperature above the glass transition of the polymer. Consequently, the rearrangement of these inorganic networks leads the formation of SG-like structure possessing unique nanohybrids with ordered texture. This unique nanomaterials with SG-like structure is referred as a pseudo-SG (p-SG) nanohybrids.

  6. Pulsed x-ray induced attenuation measurements of single mode optical fibers and coupler materials

    International Nuclear Information System (INIS)

    Johan, A.; Charre, P.

    1994-01-01

    Pulsed X-ray induced transient radiation attenuation measurements of single mode optical fibers have been performed versus total dose, light wavelength, optical power and fiber coil diameter in order to determine the behavior of parameters sensitive to ionizing radiation. The results did not show any photobleaching phenomenon and the attenuation was found independent of the spool diameter. As expected, transient attenuation was lower for higher wave-lengths. The recovery took place in the millisecond range and was independent of total dose, light wavelength and optical power. In optical modules and devices a large range of behaviors was observed according to coupler material i.e., Corning coupler showed a small peak attenuation that remained more than one day later; on the other hand LiTaO 3 material experienced an order of magnitude higher peak attenuation and a recovery in the millisecond range. For applications with optical fibers and integrated optics devices the authors showed that in many cases the optical fiber (length above 100 m) is the most sensitive device in a transient ionizing radiation field

  7. L1014F-kdr Mutation in Indian Anopheles subpictus (Diptera: Culicidae) Arising From Two Alternative Transversions in the Voltage-Gated Sodium Channel and a Single PIRA-PCR for Their Detection.

    Science.gov (United States)

    Singh, O P; Dykes, C L; Sharma, G; Das, M K

    2015-01-01

    Leucine-to-phenylalanine substitution at residue L1014 in the voltage-gated sodium channel, target site of action for dichlorodiphenyltrichloroethane (DDT) and pyrethroids, is the most common knockdown resistance (kdr) mutation reported in several insects conferring resistance against DDT and pyrethroids. Here, we report presence of two coexisting alternative transversions, A>T and A>C, on the third codon position of L1014 residue in malaria vector Anopheles subpictus Grassi (species A) from Jamshedpur (India), both leading to the same amino acid substitution of Leu-to-Phe with allelic frequencies of 19 and 67%, respectively. A single primer-introduced restriction analysis-polymerase chain reaction (PIRA-PCR) was devised for the identification of L1014F-kdr mutation in An. subpictus resulting from either type of point mutation. Genotyping of samples with PIRA-PCR revealed high frequency (82%) of L1014F-kdr mutation in the study area. © The Authors 2015. Published by Oxford University Press on behalf of Entomological Society of America. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  8. Phonons of single quintuple Bi 2 Te 3 and Bi 2 Se 3 films and bulk materials

    KAUST Repository

    Cheng, Wei; Ren, Shang-Fen

    2011-01-01

    Phonons of single quintuple films of Bi2Te3 and Bi2Se3 and corresponding bulk materials are calculated in detail by MedeA (a trademark of Materials Design) and Vienna ab initio simulation package (VASP). The calculated results with and without spin-orbit couplings are compared, and the important roles that the spin-orbit coupling plays in these materials are discussed. A symmetry breaking caused by the anharmonic potentials around Bi atoms in the single quintuple films is identified and discussed. The observed Raman intensity features in Bi 2Te3 and Bi2Se3 quintuple films are explained. © 2011 American Physical Society.

  9. Phonons of single quintuple Bi 2 Te 3 and Bi 2 Se 3 films and bulk materials

    KAUST Repository

    Cheng, Wei

    2011-03-10

    Phonons of single quintuple films of Bi2Te3 and Bi2Se3 and corresponding bulk materials are calculated in detail by MedeA (a trademark of Materials Design) and Vienna ab initio simulation package (VASP). The calculated results with and without spin-orbit couplings are compared, and the important roles that the spin-orbit coupling plays in these materials are discussed. A symmetry breaking caused by the anharmonic potentials around Bi atoms in the single quintuple films is identified and discussed. The observed Raman intensity features in Bi 2Te3 and Bi2Se3 quintuple films are explained. © 2011 American Physical Society.

  10. Engineering evaluation/cost analysis for the proposed removal of contaminated materials from Pad 1 at the Elza Gate site, Oak Ridge, Tennessee

    International Nuclear Information System (INIS)

    1990-06-01

    This engineering evaluation/cost analysis (EE/CA) has been prepared in support of the proposed removal action for cleanup of radioactively contaminated concrete and soil beneath a building on privately owned commercial property in Oak Ridge, Tennessee. The property, known as the Elza Gate site, became contaminated with uranium-238, radium-226, thorium-232, thorium-230, and decay products as a result of the Manhattan Engineer District storing uranium ore and ore processing residues at the site in the early 1940s. The US Department of Energy (DOE) has responsibility for cleanup of the property under its Formerly Utilized Sites Remedial Action Program (FUSRAP). The DOE plans to remove the cracked and worn concrete pad and contaminated subsoil beneath the pad, after which the property owner/tenant will provide clean backfill and new concrete. Portions of the pad and subsoil are contaminated and, if stored or disposed of improperly, may represent a potential threat to public health or welfare and the environment. The EE/CA report is the appropriate documentation for the proposed removal action, as identified in guidance from the US Environmental Protection Agency. the objective of the EE/CA report, in addition to identifying the planned removal action, is to document the selection of response activities that will mitigate the potential for release of contaminants from the property into the environment and minimize the related threats to public health or welfare and the environment. 7 refs., 2 figs., 3 tabs

  11. Engineering evaluation/cost analysis for the proposed removal of contaminated materials from pad 1 at the Elza Gate site, Oak Ridge, Tennessee

    International Nuclear Information System (INIS)

    1990-09-01

    This engineering evaluation/cost analysis (EE/CA) has been prepared in support of the proposed removal action for cleanup of radioactively contaminated concrete and soil beneath a building on privately owned commercial property in Oak Ridge, Tennessee. The property, known as the Elza Gate site, became contaminated with uranium-238, radium-226, thorium-232, thorium-230, and decay products as a result of the Manhattan Engineer District storing uranium ore and ore processing residues at the site in the early 1940s. The US Department of Energy (DOE) has responsibility for cleanup of the property under its Formerly Utilized Sites Remedial Action Program (FUSRAP). The DOE plans to remove the cracked and worn concrete pad and contaminated subsoil beneath the pad, after which the property owner/tenant will provide clean backfill and new concrete. Portions of the pad and subsoil are contaminated and, if stored or disposed of improperly, may represent a potential threat to public health or welfare and the environment. The EE/CA report is the appropriate documentation for the proposed removal action, as identified in guidance from the US Environmental Protection Agency. The objective of the EE/CA report, in addition to identifying the planned removal action, is to document the selection of response activities that will mitigate the potential for release of contaminants from the property into the environment and minimize the related threats to public health or welfare and the environment. 7 refs., 2 figs., 3 tabs

  12. Advanced Material-Ordered Nanotubular Ceramic Membranes Covalently Capped with Single-Wall Carbon Nanotubes

    Directory of Open Access Journals (Sweden)

    Samer Al-Gharabli

    2018-05-01

    Full Text Available Advanced ceramic materials with a well-defined nano-architecture of their surfaces were formed by applying a two-step procedure. Firstly, a primary amine was docked on the ordered nanotubular ceramic surface via a silanization process. Subsequently, single-wall carbon nanotubes (SWCNTs were covalently grafted onto the surface via an amide building block. Physicochemical (e.g., hydrophobicity, and surface free energy (SFE, mechanical, and tribological properties of the developed membranes were improved significantly. The design, preparation, and extended characterization of the developed membranes are presented. Tools such as high-resolution transmission electron microscopy (HR-TEM, single-area electron diffraction (SAED analysis, microscopy, tribology, nano-indentation, and Raman spectroscopy, among other techniques, were utilized in the characterization of the developed membranes. As an effect of hydrophobization, the contact angles (CAs changed from 38° to 110° and from 51° to 95° for the silanization of ceramic membranes 20 (CM20 and CM100, respectively. SWCNT functionalization reduced the CAs to 72° and 66° for ceramic membranes carbon nanotubes 20 (CM-CNT-20 and CM-CNT-100, respectively. The mechanical properties of the developed membranes improved significantly. From the nanotribological study, Young’s modulus increased from 3 to 39 GPa for CM-CNT-20 and from 43 to 48 GPa for pristine CM-CNT-100. Furthermore, the nanohardness increased by about 80% after the attachment of CNTs for both types of ceramics. The proposed protocol within this work for the development of functionalized ceramic membranes is both simple and efficient.

  13. High-Mobility 6,13-Bis(triisopropylsilylethynyl) Pentacene Transistors Using Solution-Processed Polysilsesquioxane Gate Dielectric Layers.

    Science.gov (United States)

    Matsuda, Yu; Nakahara, Yoshio; Michiura, Daisuke; Uno, Kazuyuki; Tanaka, Ichiro

    2016-04-01

    Polysilsesquioxane (PSQ) is a low-temperature curable polymer that is compatible with low-cost plastic substrates. We cured PSQ gate dielectric layers by irradiation with ultraviolet light at ~60 °C, and used them for 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) thin film transistors (TFTs). The fabricated TFTs have shown the maximum and average hole mobility of 1.3 and 0.78 ± 0.3 cm2V-1s-1, which are comparable to those of the previously reported transistors using single-crystalline TIPS-pentacene micro-ribbons for their active layers and thermally oxidized SiO2 for their gate dielectric layers. Itis therefore demonstrated that PSQ is a promising polymer gate dielectric material for low-cost organic TFTs.

  14. Non-destructive characterization of materials by single-sided NMR

    International Nuclear Information System (INIS)

    Goga, Nicolae-Octavian

    2007-01-01

    The experiments conducted in this work demonstrate the efficiency and sensitivity of single-sided NMR for investigating macromolecular materials on large time and length scales. Elastomers can readily be characterized by unilateral NMR of protons in terms of a variety of parameters, which correlate with the overall molecular mobility. In this way information about the cross-link density, state of cure and strain, the effects of aging and product heterogeneity can obtained. For these purposes, the NMR-MOUSE was used to optimize product development and to monitor product and production quality on-line. The sensor is also suitable for nondestructive probing of the mechanical deformation in cross-linked elastomers. A special magnet design that fits a stress-strain device has been used for complementary investigation of a series of different rubber stripes during mechanical testing. The profile NMR-MOUSE was found to be a unique tool for the characterization of changes induced by the UV irradiation in natural rubber. The aging profiles were interpreted for the first time based on a novel model in which the radiation absorption coefficient depends on the depth in the sample. (orig.)

  15. Direct Laser Writing of Single-Material Sheets with Programmable Self-Rolling Capability

    Science.gov (United States)

    Bauhofer, Anton; KröDel, Sebastian; Bilal, Osama; Daraio, Chiara; Constantinescu, Andrei

    Direct laser writing, a sub-class of two-photon polymerization, facilitates 3D-printing of single-material microstructures with inherent residual stresses. Here we show that controlled distribution of these stresses allows for fast and cost-effective fabrication of structures with programmable self-rolling capability. We investigate 2D sheets that evolve into versatile 3D structures. Precise control over the shape morphing potential is acquired through variations in geometry and writing parameters. Effects of capillary action and gravity were shown to be relevant for very thin sheets (thickness 1.5um) are dominated by residual stresses and adhesion forces. The presented structures create local tensions up to 180MPa, causing rolling curvatures of 25E3m-1. A comprehensive analytical model that captures the relevant influence factors was developed based on laminate plate theory. The predicted curvature and directionality correspond well with the experimentally obtained data. Potential applications are found in drug encapsulation and particle traps for emulsions with differing surface energies. This work was supported by the Swiss National Science Foundation.

  16. Non-destructive characterization of materials by single-sided NMR

    Energy Technology Data Exchange (ETDEWEB)

    Goga, Nicolae-Octavian

    2007-08-20

    The experiments conducted in this work demonstrate the efficiency and sensitivity of single-sided NMR for investigating macromolecular materials on large time and length scales. Elastomers can readily be characterized by unilateral NMR of protons in terms of a variety of parameters, which correlate with the overall molecular mobility. In this way information about the cross-link density, state of cure and strain, the effects of aging and product heterogeneity can obtained. For these purposes, the NMR-MOUSE was used to optimize product development and to monitor product and production quality on-line. The sensor is also suitable for nondestructive probing of the mechanical deformation in cross-linked elastomers. A special magnet design that fits a stress-strain device has been used for complementary investigation of a series of different rubber stripes during mechanical testing. The profile NMR-MOUSE was found to be a unique tool for the characterization of changes induced by the UV irradiation in natural rubber. The aging profiles were interpreted for the first time based on a novel model in which the radiation absorption coefficient depends on the depth in the sample. (orig.)

  17. A study of the effect of binary oxide materials in a single droplet vapor explosion

    Energy Technology Data Exchange (ETDEWEB)

    Hansson, R.C., E-mail: rch@kth.se [Royal Institute of Technology, Stockholm (Sweden); Dinh, T.N.; Manickam, L.T. [Royal Institute of Technology, Stockholm (Sweden)

    2013-11-15

    In an effort to explore fundamental mechanisms that may govern the effect of melt material on vapor explosion's triggering, fine fragmentation and energetics, a series of experiments using a binary-oxide mixture with eutectic and non-eutectic compositions were performed. Interactions of a hot liquid (WO{sub 3}–CaO) droplet and a volatile liquid (water) were investigated in well-controlled, externally triggered, single-droplet experiments conducted in the Micro-interactions in steam explosion experiments (MISTEE) facility. The tests were visualized by means of a synchronized digital cinematography and continuous X-ray radiography system, called simultaneous high-speed acquisition of X-ray radiography and photography (SHARP). The acquired images followed by further analysis indicate milder interactions for the droplet with non-eutectic melt composition in the tests with low melt superheat, whereas no evident differences between eutectic and non-eutectic melt compositions regarding bubble dynamics, energetics and melt preconditioning was observed in the tests with higher melt superheat.

  18. A study of the effect of binary oxide materials in a single droplet vapor explosion

    International Nuclear Information System (INIS)

    Hansson, R.C.; Dinh, T.N.; Manickam, L.T.

    2013-01-01

    In an effort to explore fundamental mechanisms that may govern the effect of melt material on vapor explosion's triggering, fine fragmentation and energetics, a series of experiments using a binary-oxide mixture with eutectic and non-eutectic compositions were performed. Interactions of a hot liquid (WO 3 –CaO) droplet and a volatile liquid (water) were investigated in well-controlled, externally triggered, single-droplet experiments conducted in the Micro-interactions in steam explosion experiments (MISTEE) facility. The tests were visualized by means of a synchronized digital cinematography and continuous X-ray radiography system, called simultaneous high-speed acquisition of X-ray radiography and photography (SHARP). The acquired images followed by further analysis indicate milder interactions for the droplet with non-eutectic melt composition in the tests with low melt superheat, whereas no evident differences between eutectic and non-eutectic melt compositions regarding bubble dynamics, energetics and melt preconditioning was observed in the tests with higher melt superheat

  19. The effect of binary oxide materials on a single droplet vapor explosion triggering

    Energy Technology Data Exchange (ETDEWEB)

    Hansson, R.C.; Manickam, L.T.; Dinh, T.N. [Royal Inst. of Tech., Stockholm (Sweden)

    2011-07-01

    In order to explore the fundamental mechanism dictated by the material influence on triggering, fine fragmentation and subsequent vapor explosion energetics, a series of experiments using a mixture of eutectic and non-eutectic binary oxide were initiated. Dynamics of the hot liquid (WO{sub 3}-CaO) droplet and the volatile liquid (water) were investigated in the MISTEE (Micro-Interactions in Steam Explosion Experiments) facility by performing well-controlled, externally triggered, single-droplet experiments, using a high-speed visualization system with synchronized digital cinematography and continuous X-ray radiography, called SHARP (Simultaneous High-speed Acquisition of X-ray Radiography and Photography). The acquired images followed by further analysis showed a milder interaction for the non-eutectic melt composition for the tests with low melt superheat, whether no evident differences between eutectic and non-eutectic melt compositions regarding bubble dynamics, energetics and melt preconditioning was perceived for the high melt superheat tests. (author)

  20. Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour.

    Science.gov (United States)

    Hou, Xu; Hu, Yuhang; Grinthal, Alison; Khan, Mughees; Aizenberg, Joanna

    2015-03-05

    Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. The ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems. But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries, a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and fouling is nearly inevitable. Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state. Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold-the pressure needed to open the pores-can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping. These capabilities allow us to dynamically modulate gas-liquid sorting in a microfluidic flow and to separate a three-phase air-water-oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.

  1. Liquid-based gating mechanism with tunable multiphase selectivity and antifouling behaviour

    Energy Technology Data Exchange (ETDEWEB)

    Hou, X; Hu, YH; Grinthal, A; Khan, M; Aizenberg, J

    2015-03-04

    Living organisms make extensive use of micro- and nanometre-sized pores as gatekeepers for controlling the movement of fluids, vapours and solids between complex environments. The ability of such pores to coordinate multiphase transport, in a highly selective and subtly triggered fashion and without clogging, has inspired interest in synthetic gated pores for applications ranging from fluid processing to 3D printing and lab-on-chip systems(1-10). But although specific gating and transport behaviours have been realized by precisely tailoring pore surface chemistries and pore geometries(6,11-17), a single system capable of controlling complex, selective multiphase transport has remained a distant prospect, and fouling is nearly inevitable(11,12). Here we introduce a gating mechanism that uses a capillary-stabilized liquid as a reversible, reconfigurable gate that fills and seals pores in the closed state, and creates a non-fouling, liquid-lined pore in the open state. Theoretical modelling and experiments demonstrate that for each transport substance, the gating threshold-the pressure needed to open the pores-can be rationally tuned over a wide pressure range. This enables us to realize in one system differential response profiles for a variety of liquids and gases, even letting liquids flow through the pore while preventing gas from escaping. These capabilities allow us to dynamically modulate gas-liquid sorting in a microfluidic flow and to separate a three-phase air-water-oil mixture, with the liquid lining ensuring sustained antifouling behaviour. Because the liquid gating strategy enables efficient long-term operation and can be applied to a variety of pore structures and membrane materials, and to micro- as well as macroscale fluid systems, we expect it to prove useful in a wide range of applications.

  2. Single Point Incremental Forming to increase material knowledge and production flexibility

    International Nuclear Information System (INIS)

    Habraken, A.M.

    2016-01-01

    Nowadays, manufactured pieces can be divided into two groups: mass production and production of low volume number of parts. Within the second group (prototyping or small batch production), an emerging solution relies on Incremental Sheet Forming or ISF. ISF refers to processes where the plastic deformation occurs by repeated contact with a relatively small tool. More specifically, many publications over the past decade investigate Single Point Incremental Forming (SPIF) where the final shape is determined only by the tool movement. This manufacturing process is characterized by the forming of sheets by means of a CNC controlled generic tool stylus, with the sheets clamped by means of a non-workpiece-specific clamping system and in absence of a partial or a full die. The advantage is no tooling requirements and often enhanced formability, however it poses a challenge in term of process control and accuracy assurance. Note that the most commonly used materials in incremental forming are aluminum and steel alloys however other alloys are also used especially for medical industry applications, such as cobalt and chromium alloys, stainless steel and titanium alloys. Some scientists have applied incremental forming on PVC plates and other on sandwich panels composed of propylene with mild steel and aluminum metallic foams with aluminum sheet metal. Micro incremental forming of thin foils has also been developed. Starting from the scattering of the results of Finite Element (FE) simulations, when one tries to predict the tool force (see SPIF benchmark of 2014 Numisheet conference), we will see how SPIF and even micro SPIF (process applied on thin metallic sheet with a few grains within the thickness) allow investigating the material behavior. This lecture will focus on the identification of constitutive laws, on the SPIF forming mechanisms and formability as well as the failure mechanism. Different hypotheses have been proposed to explain SPIF formability, they will be

  3. Single Point Incremental Forming to increase material knowledge and production flexibility

    Science.gov (United States)

    Habraken, A. M.

    2016-08-01

    Nowadays, manufactured pieces can be divided into two groups: mass production and production of low volume number of parts. Within the second group (prototyping or small batch production), an emerging solution relies on Incremental Sheet Forming or ISF. ISF refers to processes where the plastic deformation occurs by repeated contact with a relatively small tool. More specifically, many publications over the past decade investigate Single Point Incremental Forming (SPIF) where the final shape is determined only by the tool movement. This manufacturing process is characterized by the forming of sheets by means of a CNC controlled generic tool stylus, with the sheets clamped by means of a non-workpiece-specific clamping system and in absence of a partial or a full die. The advantage is no tooling requirements and often enhanced formability, however it poses a challenge in term of process control and accuracy assurance. Note that the most commonly used materials in incremental forming are aluminum and steel alloys however other alloys are also used especially for medical industry applications, such as cobalt and chromium alloys, stainless steel and titanium alloys. Some scientists have applied incremental forming on PVC plates and other on sandwich panels composed of propylene with mild steel and aluminum metallic foams with aluminum sheet metal. Micro incremental forming of thin foils has also been developed. Starting from the scattering of the results of Finite Element (FE) simulations, when one tries to predict the tool force (see SPIF benchmark of 2014 Numisheet conference), we will see how SPIF and even micro SPIF (process applied on thin metallic sheet with a few grains within the thickness) allow investigating the material behavior. This lecture will focus on the identification of constitutive laws, on the SPIF forming mechanisms and formability as well as the failure mechanism. Different hypotheses have been proposed to explain SPIF formability, they will be

  4. Single-crystal growth of ceria-based materials; Einkristallzuechtung von Materialien auf der Basis von Cerdioxid

    Energy Technology Data Exchange (ETDEWEB)

    Ulbrich, Gregor

    2015-07-23

    In this work it could be shown that Skull-Melting is a suitable method for growing ceria single crystals. Twenty different ceria-based single crystals could be manufactured. It was possible to dope ceria single crystals with Gd, Sm, Y, Zr, Ti, Ta, and Pr in different concentrations. Also co-doping with the named metals was realized. However, there remain some problems for growing ceria-based single crystals by Skull-Melting. As ignition metal zirconium was used because no ceria-based material works well. For that reason all single crystals show small zirconium contamination. Another problem is the formation of oxygen by the heat-induced reduction of ceria during the melting process. Because of that the skull of sintered material is often destroyed by gas pressure. This problem had to be solved individually for every single crystal. The obtained single crystals were characterized using different methods. To ensure the single crystal character the y were examined by Laue diffraction. All manufactured crystals are single crystals. Also powder diffraction patterns of the milled and oxidized samples were measured. For the determination of symmetry and metric the structural parameters were analyzed by the Rietveld method. All synthesized materials crystallize in space group Fm-3m known from calcium fluoride. The cubic lattice parameter a was determined for all crystals. In the case of series with different cerium and zirconium concentrations a linear correlation between cerium content and cubic lattice parameter was detected. The elemental composition was determined by WDX. All crystals show a homogeneous elemental distribution. The oxygen content was calculated because the WDX method isn't useful for determination.

  5. Impact of intracoronary injection of mononuclear bone marrow cells in acute myocardial infarction on left ventricular perfusion and function: a 6-month follow-up gated 99mTc-MIBI single-photon emission computed tomography study

    International Nuclear Information System (INIS)

    Lipiec, Piotr; Krzeminska-Pakula, Maria; Plewka, Michal; Kasprzak, Jaroslaw D.; Kusmierek, Jacek; Plachcinska, Anna; Szuminski, Remigiusz; Robak, Tadeusz; Korycka, Anna

    2009-01-01

    We investigated the impact of intracoronary injection of autologous mononuclear bone marrow cells (BMC) in patients with acute ST elevation myocardial infarction (STEMI) on left ventricular volumes, global and regional systolic function and myocardial perfusion. The study included 39 patients with first anterior STEMI treated successfully with primary percutaneous coronary intervention. They were randomly assigned to the treatment group or the control group in a 2:1 ratio. The patients underwent baseline gated single-photon emission computed tomography (G-SPECT) 3-10 days after STEMI with quantitative and qualitative analysis of left ventricular perfusion and systolic function. On the following day, patients from the BMC treatment group were subjected to bone marrow aspiration, mononuclear BMC isolation and intracoronary injection. No placebo procedure was performed in the control group. G-SPECT was repeated 6 months after STEMI. Baseline and follow-up G-SPECT studies were available for 36 patients. At 6 months in the BMC group we observed a significantly enhanced improvement in the mean extent of the perfusion defect, the left ventricular perfusion score index, the infarct area perfusion score and the infarct area wall motion score index compared to the control group (p=0.01-0.04). However, the changes in left ventricular volume, ejection fraction and the left ventricular wall motion score index as well as the relative changes in the infarct area wall motion score index did not differ significantly between the groups. Intracoronary injection of autologous mononuclear BMC in patients with STEMI improves myocardial perfusion at 6 months. The benefit in infarct area systolic function is less pronounced and there is no apparent improvement of global left ventricular systolic function. (orig.)

  6. High-Purity Semiconducting Single-Walled Carbon Nanotubes: A Key Enabling Material in Emerging Electronics.

    Science.gov (United States)

    Lefebvre, Jacques; Ding, Jianfu; Li, Zhao; Finnie, Paul; Lopinski, Gregory; Malenfant, Patrick R L

    2017-10-17

    Semiconducting single-walled carbon nanotubes (sc-SWCNTs) are emerging as a promising material for high-performance, high-density devices as well as low-cost, large-area macroelectronics produced via additive manufacturing methods such as roll-to-roll printing. Proof-of-concept demonstrations have indicated the potential of sc-SWCNTs for digital electronics, radiofrequency circuits, radiation hard memory, improved sensors, and flexible, stretchable, conformable electronics. Advances toward commercial applications bring numerous opportunities in SWCNT materials development and characterization as well as fabrication processes and printing technologies. Commercialization in electronics will require large quantities of sc-SWCNTs, and the challenge for materials science is the development of scalable synthesis, purification, and enrichment methods. While a few synthesis routes have shown promising results in making near-monochiral SWCNTs, gram quantities are available only for small-diameter sc-SWCNTs, which underperform in transistors. Most synthesis routes yield mixtures of SWCNTs, typically 30% metallic and 70% semiconducting, necessitating the extraction of sc-SWCNTs from their metallic counterparts in high purity using scalable postsynthetic methods. Numerous routes to obtain high-purity sc-SWCNTs from raw soot have been developed, including density-gradient ultracentrifugation, chromatography, aqueous two-phase extraction, and selective DNA or polymer wrapping. By these methods (termed sorting or enrichment), >99% sc-SWCNT content can be achieved. Currently, all of these approaches have drawbacks and limitations with respect to electronics applications, such as excessive dilution, expensive consumables, and high ionic impurity content. Excess amount of dispersant is a common challenge that hinders direct inclusion of sc-SWCNTs into electronic devices. At present, conjugated polymer extraction may represent the most practical route to sc-SWCNTs. By the use of

  7. Analyses of significant features of L-Prolinium Picrate single crystal: An excellent material for non linear optical applications

    Energy Technology Data Exchange (ETDEWEB)

    Thukral, Kanika [Academy of Scientific and Innovative Research, CSIR- National Physical Laboratory, New Delhi, 110012 (India); CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi, 110 012 (India); Vijayan, N., E-mail: nvijayan@nplindia.org [CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi, 110 012 (India); Vij, Mahak [CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi, 110 012 (India); Nagaraja, C.M. [Department of Chemistry, Indian Institute of Technology Ropar, Rupnagar, 140001, Punjab (India); Jayaramakrishnan, V. [Centro De Investigations En Optica, Loma del Bosque 115, Colonia Lomas del Campestre, León, Guanajuato, Código Postal, 37150 (Mexico); Jayalakshmy, M.S. [International and Inter University Centre for Nanoscience and Nanotechnology, Mahatma Gandhi University, Kottayam, Kerala, 686560 (India); Kant, Rajni [Department of Physics and Electronics, University of Jammu, Jammu Tawi, 180006 (India)

    2017-06-15

    Today the fundamental aspect of the researchers is to explore maximum physical properties of the material for device fabrication. In the present article, single crystal X-ray diffraction has been carried out to verify the formation of the synthesized compound. In addition to that, powder X-ray diffraction has been performed to obtain diffraction pattern of L-Prolinium Picrate single crystal. The strain present inside the single crystal was measured using Hall-Williamson equation from PXRD measurements. The dark current and photon current was obtained from photoconductivity technique whose plot depicted that the sample was negative photoconducting material. Optical homogeneity of the single crystal was analyzed using birefringence technique. Its resistance towards Nd: YAG laser was scrutinized for L-Prolinium Picrate single crystal by applying 1 pulse per second. Different thermal parameters like thermal conductivity, thermal diffusivity, thermal effusivity and specific heat were computed using photo-pyroelectric technique. Solid state parameters were calculated from Clausius Mossotti relation by taking structural information of the title compound. Also, optical parameters like refractive index, reflectance etc were calculated through UV–Vis–NIR analysis. - Highlights: • An optically transparent L-Prolinium Picrate single crystal was harvested from slow evaporation solution growth technique. • The compound shows negative photoconducting nature. • Its optical homogeneity was analyzed using birefringence. • Single shot of laser was applied to sample to measure laser damage threshold value. • The thermal parameters were computed from Photopyroelectric technique.

  8. Cardiac gated ventilation

    International Nuclear Information System (INIS)

    Hanson, C.W. III; Hoffman, E.A.

    1995-01-01

    There are several theoretic advantages to synchronizing positive pressure breaths with the cardiac cycle, including the potential for improving distribution of pulmonary and myocardial blood flow and enhancing cardiac output. The authors evaluated the effects of synchronizing respiration to the cardiac cycle using a programmable ventilator and electron beam CT (EBCT) scanning. The hearts of anesthetized dogs were imaged during cardiac gated respiration with a 50 msec scan aperture. Multi slice, short axis, dynamic image data sets spanning the apex to base of the left ventricle were evaluated to determine the volume of the left ventricular chamber at end-diastole and end-systole during apnea, systolic and diastolic cardiac gating. The authors observed an increase in cardiac output of up to 30% with inspiration gated to the systolic phase of the cardiac cycle in a non-failing model of the heart

  9. Shape changing collisions of optical solitons, universal logic gates ...

    Indian Academy of Sciences (India)

    ... in optical media such as multicore fibers, photorefractive materials and so on. ... of logic gates and Turing equivalent all optical computers in homogeneous bulk media as shown by Steiglitz recently. ... Pramana – Journal of Physics | News.

  10. Four-frame gated optical imager with 120-ps resolution

    International Nuclear Information System (INIS)

    Young, P.E.; Hares, J.D.; Kilkenny, J.D.; Phillion, D.W.; Campbell, E.M.

    1988-04-01

    In this paper we describe the operation and applications of a framing camera capable of four separate two-dimensional images with each frame having a 120-ps gate width. Fast gating of a single frame is accomplished by using a wafer image intensifier tube in which the cathode is capacitively coupled to an external electrode placed outside of the photocathode of the tube. This electrode is then pulsed relative to the microchannel plate by a narrow (120 ps), high-voltage pulse. Multiple frames are obtained by using multiple gated tubes which share a single bias supply and pulser with relative gate times selected by the cable lengths between the tubes and the pulser. A beamsplitter system has been constructed which produces a separate image for each tube from a single scene. Applications of the framing camera to inertial confinement fusion experiments are discussed

  11. A review on solar cells from Si-single crystals to porous materials and quantum dots.

    Science.gov (United States)

    Badawy, Waheed A

    2015-03-01

    Solar energy conversion to electricity through photovoltaics or to useful fuel through photoelectrochemical cells was still a main task for research groups and developments sectors. In this article we are reviewing the development of the different generations of solar cells. The fabrication of solar cells has passed through a large number of improvement steps considering the technological and economic aspects. The first generation solar cells were based on Si wafers, mainly single crystals. Permanent researches on cost reduction and improved solar cell efficiency have led to the marketing of solar modules having 12-16% solar conversion efficiency. Application of polycrystalline Si and other forms of Si have reduced the cost but on the expense of the solar conversion efficiency. The second generation solar cells were based on thin film technology. Thin films of amorphous Si, CIS (copper-indium-selenide) and t-Si were employed. Solar conversion efficiencies of about 12% have been achieved with a remarkable cost reduction. The third generation solar cells are based on nano-crystals and nano-porous materials. An advanced photovoltaic cell, originally developed for satellites with solar conversion efficiency of 37.3%, based on concentration of the solar spectrum up to 400 suns was developed. It is based on extremely thin concentration cells. New sensitizer or semiconductor systems are necessary to broaden the photo-response in solar spectrum. Hybrids of solar and conventional devices may provide an interim benefit in seeking economically valuable devices. New quantum dot solar cells based on CdSe-TiO2 architecture have been developed.

  12. A review on solar cells from Si-single crystals to porous materials and quantum dots

    Directory of Open Access Journals (Sweden)

    Waheed A. Badawy

    2015-03-01

    Full Text Available Solar energy conversion to electricity through photovoltaics or to useful fuel through photoelectrochemical cells was still a main task for research groups and developments sectors. In this article we are reviewing the development of the different generations of solar cells. The fabrication of solar cells has passed through a large number of improvement steps considering the technological and economic aspects. The first generation solar cells were based on Si wafers, mainly single crystals. Permanent researches on cost reduction and improved solar cell efficiency have led to the marketing of solar modules having 12–16% solar conversion efficiency. Application of polycrystalline Si and other forms of Si have reduced the cost but on the expense of the solar conversion efficiency. The second generation solar cells were based on thin film technology. Thin films of amorphous Si, CIS (copper–indium–selenide and t-Si were employed. Solar conversion efficiencies of about 12% have been achieved with a remarkable cost reduction. The third generation solar cells are based on nano-crystals and nano-porous materials. An advanced photovoltaic cell, originally developed for satellites with solar conversion efficiency of 37.3%, based on concentration of the solar spectrum up to 400 suns was developed. It is based on extremely thin concentration cells. New sensitizer or semiconductor systems are necessary to broaden the photo-response in solar spectrum. Hybrids of solar and conventional devices may provide an interim benefit in seeking economically valuable devices. New quantum dot solar cells based on CdSe–TiO2 architecture have been developed.

  13. Plasmid-derived DNA Strand Displacement Gates for Implementing Chemical Reaction Networks.

    Science.gov (United States)

    Chen, Yuan-Jyue; Rao, Sundipta D; Seelig, Georg

    2015-11-25

    DNA nanotechnology requires large amounts of highly pure DNA as an engineering material. Plasmid DNA could meet this need since it is replicated with high fidelity, is readily amplified through bacterial culture and can be stored indefinitely in the form of bacterial glycerol stocks. However, the double-stranded nature of plasmid DNA has so far hindered its efficient use for construction of DNA nanostructures or devices that typically contain single-stranded or branched domains. In recent work, it was found that nicked double stranded DNA (ndsDNA) strand displacement gates could be sourced from plasmid DNA. The following is a protocol that details how these ndsDNA gates can be efficiently encoded in plasmids and can be derived from the plasmids through a small number of enzymatic processing steps. Also given is a protocol for testing ndsDNA gates using fluorescence kinetics measurements. NdsDNA gates can be used to implement arbitrary chemical reaction networks (CRNs) and thus provide a pathway towards the use of the CRN formalism as a prescriptive molecular programming language. To demonstrate this technology, a multi-step reaction cascade with catalytic kinetics is constructed. Further it is shown that plasmid-derived components perform better than identical components assembled from synthetic DNA.

  14. 3 kW single stage all-fiber Yb-doped single-mode fiber laser for highly reflective and highly thermal conductive materials processing

    Science.gov (United States)

    Ikoma, S.; Nguyen, H. K.; Kashiwagi, M.; Uchiyama, K.; Shima, K.; Tanaka, D.

    2017-02-01

    A 3 kW single stage all-fiber Yb-doped single-mode fiber laser with bi-directional pumping configuration has been demonstrated. Our newly developed high-power LD modules are employed for a high available pump power of 4.9 kW. The length of the delivery fiber is 20 m which is long enough to be used in most of laser processing machines. An output power of 3 kW was achieved at a pump power of 4.23 kW. The slope efficiency was 70%. SRS was able to be suppressed at the same output power by increasing ratio of backward pump power. The SRS level was improved by 5dB when 57% backward pump ratio was adopted compared with the case of 50%. SRS was 35dB below the laser power at the output power of 3 kW even with a 20-m delivery fiber. The M-squared factor was 1.3. Single-mode beam quality was obtained. To evaluate practical utility of the 3 kW single-mode fiber laser, a Bead-on-Plate (BoP) test onto a pure copper plate was executed. The BoP test onto a copper plate was made without stopping or damaging the laser system. That indicates our high power single-mode fiber lasers can be used practically in processing of materials with high reflectivity and high thermal conductivity.

  15. Dentist Material Selection for Single-Unit Crowns: Findings from The National Dental Practice-Based Research Network

    Science.gov (United States)

    Makhija, Sonia K.; Lawson, Nathaniel C.; Gilbert, Gregg H.; Litaker, Mark S.; McClelland, Jocelyn A.; Louis, David R.; Gordan, Valeria V.; Pihlstrom, Daniel J.; Meyerowitz, Cyril; Mungia, Rahma; McCracken, Michael S.

    2016-01-01

    Objectives Dentists enrolled in the National Dental Practice-Based Research Network completed a study questionnaire about techniques and materials used for single-unit crowns and an enrollment questionnaire about dentist/practice characteristics. The objectives were to quantify dentists’ material recommendations and test the hypothesis that dentist’s and practice’s characteristics are significantly associated with these recommendations. Methods Surveyed dentists responded to a contextual scenario asking what material they would use for a single-unit crown on an anterior and posterior tooth. Material choices included: full metal, porcelain-fused-to-metal (PFM), all-zirconia, layered zirconia, lithium disilicate, leucite-reinforced ceramic, or other. Results 1,777 of 2,132 eligible dentists responded (83%). The top 3 choices for anterior crowns were lithium disilicate (54%), layered zirconia (17%), and leucite-reinforced glass ceramic (13%). There were significant differences (p<0.05) by dentist’s gender, race, years since graduation, practice type, region, practice busyness, hours worked/week, and location type. The top 3 choices for posterior crowns were all-zirconia (32%), PFM (31%), and lithium disilicate (21%). There were significant differences (p<0.05) by dentist’s gender, practice type, region, practice busyness, insurance coverage, hours worked/week, and location type. Conclusions Network dentists use a broad range of materials for single-unit crowns for anterior and posterior teeth, adopting newer materials into their practices as they become available. Material choices are significantly associated with dentist’s and practice’s characteristics. Clinical Significance Decisions for crown material may be influenced by factors unrelated to tooth and patient variables. Dentists should be cognizant of this when developing an evidence-based approach to selecting crown material. PMID:27693778

  16. An Assessment of New Applications for Single-Crystal Piezoelectric Materials

    National Research Council Canada - National Science Library

    Veitch, Lisa

    1998-01-01

    Piezoelectricity was first discovered by the Curie brothers in 1880. During the 1940s, piezoelectric ceramic materials were first used in commercial devices, and new materials and other applications have continued to develop over the years...

  17. Formation of multipartite entanglement using random quantum gates

    International Nuclear Information System (INIS)

    Most, Yonatan; Shimoni, Yishai; Biham, Ofer

    2007-01-01

    The formation of multipartite quantum entanglement by repeated operation of one- and two-qubit gates is examined. The resulting entanglement is evaluated using two measures: the average bipartite entanglement and the Groverian measure. A comparison is made between two geometries of the quantum register: a one-dimensional chain in which two-qubit gates apply only locally between nearest neighbors and a nonlocal geometry in which such gates may apply between any pair of qubits. More specifically, we use a combination of random single-qubit rotations and a fixed two-qubit gate such as the controlled-phase gate. It is found that in the nonlocal geometry the entanglement is generated at a higher rate. In both geometries, the Groverian measure converges to its asymptotic value more slowly than the average bipartite entanglement. These results are expected to have implications on different proposed geometries of future quantum computers with local and nonlocal interactions between the qubits

  18. Precision Photothermal Annealing of Nanoporous Gold Thin Films for the Microfabrication of a Single-chip Material Libraries

    Energy Technology Data Exchange (ETDEWEB)

    Harris, C. D. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Shen, N. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Rubenchik, A. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Demos, S. G. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Matthews, M. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2015-06-30

    Single-chip material libraries of thin films of nanostructured materials are a promising approach for high throughput studies of structure-property relationship in the fields of physics and biology. Nanoporous gold (np-Au), produced by an alloy corrosion process, is a nanostructured material of specific interest in both these fields. One attractive property of np-Au is its self-similar coarsening behavior by thermally induced surface diffusion. However, traditional heat application techniques for the modification of np-Au are bulk processes that cannot be used to generate a library of different pore sizes on a single chip. Laser micromachining offers an attractive solution to this problem by providing a means to apply energy with high spatial and temporal resolution. In the present study we use finite element multiphysics simulations to predict the effects of laser mode (continuous-wave vs. pulsed) and supporting substrate thermal conductivity on the local np-Au film temperatures during photothermal annealing and subsequently investigate the mechanisms by which the np-Au network is coarsening. Our simulations predict that continuous-wave mode laser irradiation on a silicon supporting substrate supports the widest range of morphologies that can be created through the photothermal annealing of thin film np-Au. Using this result we successfully fabricate a single-chip material library consisting of 81 np-Au samples of 9 different morphologies for use in increased throughput material interaction studies.

  19. Stanford, Duke, Rice,... and Gates?

    Science.gov (United States)

    Carey, Kevin

    2009-01-01

    This article presents an open letter to Bill Gates. In his letter, the author suggests that Bill Gates should build a brand-new university, a great 21st-century institution of higher learning. This university will be unlike anything the world has ever seen. He asks Bill Gates not to stop helping existing colleges create the higher-education system…

  20. Universal Fault-Tolerant Gates on Concatenated Stabilizer Codes

    Directory of Open Access Journals (Sweden)

    Theodore J. Yoder

    2016-09-01

    Full Text Available It is an oft-cited fact that no quantum code can support a set of fault-tolerant logical gates that is both universal and transversal. This no-go theorem is generally responsible for the interest in alternative universality constructions including magic state distillation. Widely overlooked, however, is the possibility of nontransversal, yet still fault-tolerant, gates that work directly on small quantum codes. Here, we demonstrate precisely the existence of such gates. In particular, we show how the limits of nontransversality can be overcome by performing rounds of intermediate error correction to create logical gates on stabilizer codes that use no ancillas other than those required for syndrome measurement. Moreover, the logical gates we construct, the most prominent examples being Toffoli and controlled-controlled-Z, often complete universal gate sets on their codes. We detail such universal constructions for the smallest quantum codes, the 5-qubit and 7-qubit codes, and then proceed to generalize the approach. One remarkable result of this generalization is that any nondegenerate stabilizer code with a complete set of fault-tolerant single-qubit Clifford gates has a universal set of fault-tolerant gates. Another is the interaction of logical qubits across different stabilizer codes, which, for instance, implies a broadly applicable method of code switching.

  1. Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane.

    Science.gov (United States)

    Zhu, Li Qiang; Wan, Chang Jin; Gao, Ping Qi; Liu, Yang Hui; Xiao, Hui; Ye, Ji Chun; Wan, Qing

    2016-08-24

    Ion-conducting materials have received considerable attention for their applications in fuel cells, electrochemical devices, and sensors. Here, flexible indium zinc oxide (InZnO) synaptic transistors with multiple presynaptic inputs gated by proton-conducting phosphorosilicate glass-based electrolyte films are fabricated on ultrathin Si membranes. Transient characteristics of the proton gated InZnO synaptic transistors are investigated, indicating stable proton-gating behaviors. Short-term synaptic plasticities are mimicked on the proposed proton-gated synaptic transistors. Furthermore, synaptic integration regulations are mimicked on the proposed synaptic transistor networks. Spiking logic modulations are realized based on the transition between superlinear and sublinear synaptic integration. The multigates coupled flexible proton-gated oxide synaptic transistors may be interesting for neuroinspired platforms with sophisticated spatiotemporal information processing.

  2. The gate oxide integrity of CVD tungsten polycide

    International Nuclear Information System (INIS)

    Wu, N.W.; Su, W.D.; Chang, S.W.; Tseng, M.F.

    1988-01-01

    CVD tungsten polycide has been demonstrated as a good gate material in recent very large scale integration (VLSI) technology. CVD tungsten silicide offers advantages of low resistivity, high temperature stability and good step coverage. On the other hand, the polysilicon underlayer preserves most characteristics of the polysilicon gate and acts as a stress buffer layer to absorb part of the thermal stress origin from the large thermal expansion coefficient of tungsten silicide. Nevertheless, the gate oxide of CVD tungsten polycide is less stable or reliable than that of polysilicon gate. In this paper, the gate oxide integrity of CVD tungsten polycide with various thickness combinations and different thermal processes have been analyzed by several electrical measurements including breakdown yield, breakdown fluence, room temperature TDDB, I-V characteristics, electron traps and interface state density

  3. Respiratory gated beam delivery cannot facilitate margin reduction, unless combined with respiratory correlated image guidance

    DEFF Research Database (Denmark)

    Korreman, S.S.; Boyer, A.L.; Juhler-Nøttrup, Trine

    2008-01-01

    PURPOSE/OBJECTIVE: In radiotherapy of targets moving with respiration, beam gating is offered as a means of reducing the target motion. The purpose of this study is to evaluate the safe magnitude of margin reduction for respiratory gated beam delivery. MATERIALS/METHODS: The study is based on data...... for 17 lung cancer patients in separate protocols at Rigshospitalet and Stanford Cancer Center. Respiratory curves for external optical markers and implanted fiducials were collected using equipment based on the RPM system (Varian Medical Systems). A total of 861 respiratory curves represented external...... measurements over 30 fraction treatment courses for 10 patients, and synchronous external/internal measurements in single sessions for seven patients. Variations in respiratory amplitude (simulated coaching) and external/internal phase shifts were simulated by perturbation with realistic values. Variations...

  4. Proton Conducting Graphene Oxide/Chitosan Composite Electrolytes as Gate Dielectrics for New-Concept Devices.

    Science.gov (United States)

    Feng, Ping; Du, Peifu; Wan, Changjin; Shi, Yi; Wan, Qing

    2016-09-30

    New-concept devices featuring the characteristics of ultralow operation voltages and low fabrication cost have received increasing attention recently because they can supplement traditional Si-based electronics. Also, organic/inorganic composite systems can offer an attractive strategy to combine the merits of organic and inorganic materials into promising electronic devices. In this report, solution-processed graphene oxide/chitosan composite film was found to be an excellent proton conducting electrolyte with a high specific capacitance of ~3.2 μF/cm 2 at 1.0 Hz, and it was used to fabricate multi-gate electric double layer transistors. Dual-gate AND logic operation and two-terminal diode operation were realized in a single device. A two-terminal synaptic device was proposed, and some important synaptic behaviors were emulated, which is interesting for neuromorphic systems.

  5. Gate-Defined Quantum Confinement in InSe-based van der Waals Heterostructures.

    Science.gov (United States)

    Hamer, Matthew J; Tóvári, Endre; Zhu, Mengjian; Thompson, Michael Dermot; Mayorov, Alexander S; Prance, Jonathan; Lee, Yongjin; Haley, Richard; Kudrynskyi, Zakhar R; Patanè, Amalia; Terry, Daniel; Kovalyuk, Zakhar D; Ensslin, Klaus; Kretinin, Andrey V; Geim, Andre K; Gorbachev, Roman Vladislavovich

    2018-05-15

    Indium selenide, a post-transition metal chalcogenide, is a novel two-dimensional (2D) semiconductor with interesting electronic properties. Its tunable band gap and high electron mobility have already attracted considerable research interest. Here we demonstrate strong quantum confinement and manipulation of single electrons in devices made from few-layer crystals of InSe using electrostatic gating. We report on gate-controlled quantum dots in the Coulomb blockade regime as well as one-dimensional quantization in point contacts, revealing multiple plateaus. The work represents an important milestone in the development of quality devices based on 2D materials and makes InSe a prime candidate for relevant electronic and optoelectronic applications.

  6. Retracted: Addition of a single methyl group to a small molecule sodium channel inhibitor introduces a new mode of gating modulation, by L Wang, SG Zellmer, DM Printzenhoff and NA Castle. British Journal of Pharmacology, volume 172(20): 4905-4918, published in October 2015; DOI 10.1111/bph.13259.

    Science.gov (United States)

    2018-07-01

    The above article, published by the British Journal of Pharmacology in October 2015 (https://bpspubs.onlinelibrary.wiley.com/doi/full/10.1111/bph.13259), has been retracted by agreement between the authors, the journal Editor in Chief and John Wiley & Sons Limited. The retraction has been agreed owing to the discovery of errors in the chemical structure of the synthetic compounds generated. The corrected structure is now available in the article PF-06526290 can both enhance and inhibit conduction through voltage gated sodium channels by L Wang, SG Zellmer, DM Printzenhoff and NA Castle, 2018, https://bpspubs.onlinelibrary.wiley.com/doi/full/10.1111/bph.14338. Reference Wang L, Zellmer SG, Printzenhoff DM, Castle NA (2015). Addition of a single methyl group to a small molecule sodium channel inhibitor introduces a new mode of gating modulation. Br J Pharmacol 172: 4905-4918. https://doi.org/10.1111/bph.13259. © 2018 The British Pharmacological Society.

  7. Single Crystal Growth of Pure Co3+ Oxidation State Material LaSrCoO4

    Directory of Open Access Journals (Sweden)

    Hanjie Guo

    2016-08-01

    Full Text Available We report on the single crystal growth of the single-layer perovskite cobaltate LaSrCoO4 that was grown by the optical floating zone method using high oxygen pressures. Phase purity and single crystallinity were confirmed by X-ray diffraction techniques. The pure Co3+ oxidation state was confirmed by X-ray absorbtion spectroscopy measurements. A transition to a spin glass state is observed at ∼7 K in magnetic susceptibility and specific heat measurements.

  8. Materials challenges for devices based on single, self-assembled InGaN quantum dots

    International Nuclear Information System (INIS)

    Oliver, Rachel A; Jarjour, Anas F; Tahraoui, Abbes; Kappers, Menno J; Taylor, Robert A; Humphreys, Colin J

    2007-01-01

    Builiding on earlier studies of single InGaN quantum dots (QDs), we are considering their potential for use in blue- and green-emitting single photon sources. Envisaging a device based on a resonant cavity light emitting diode, we have studied the effect of growing QDs on an underlying AlN/GaN distributed Bragg reflector, and have shown that enhanced single QD emission may be obtained. Additionally, we have studied the effect of the growth and activation of a p-type cap on an underlying QD layer and have shown that the QDs survive the anneal process

  9. Trapped-ion quantum logic gates based on oscillating magnetic fields.

    Science.gov (United States)

    Ospelkaus, C; Langer, C E; Amini, J M; Brown, K R; Leibfried, D; Wineland, D J

    2008-08-29

    Oscillating magnetic fields and field gradients can be used to implement single-qubit rotations and entangling multiqubit quantum gates for trapped-ion quantum information processing (QIP). With fields generated by currents in microfabricated surface-electrode traps, it should be possible to achieve gate speeds that are comparable to those of optically induced gates for realistic distances between the ion crystal and the electrode surface. Magnetic-field-mediated gates have the potential to significantly reduce the overhead in laser-beam control and motional-state initialization compared to current QIP experiments with trapped ions and will eliminate spontaneous scattering, a fundamental source of decoherence in laser-mediated gates.

  10. Influence of material and geometry on the performance of superconducting nanowire single-photon detectors

    CERN Document Server

    Henrich, Dagmar

    2013-01-01

    Superconducting Nanowire Single-Photon Detectors offer the capability to detect electromagnetic waves on a single photon level in a wavelength range that far exceeds that of alternative detector types. However, above a certain threshold wavelength, the efficiency of those detectors decreases stronlgy, leading to a poor performance in the far-infrared range. Influences on this threshold are studied and approaches for improvement are verified experimentally by measurement of the device performance.

  11. Gate-defined Quantum Confinement in Suspended Bilayer Graphene

    Science.gov (United States)

    Allen, Monica

    2013-03-01

    Quantum confined devices in carbon-based materials offer unique possibilities for applications ranging from quantum computation to sensing. In particular, nanostructured carbon is a promising candidate for spin-based quantum computation due to the ability to suppress hyperfine coupling to nuclear spins, a dominant source of spin decoherence. Yet graphene lacks an intrinsic bandgap, which poses a serious challenge for the creation of such devices. We present a novel approach to quantum confinement utilizing tunnel barriers defined by local electric fields that break sublattice symmetry in suspended bilayer graphene. This technique electrostatically confines charges via band structure control, thereby eliminating the edge and substrate disorder that hinders on-chip etched nanostructures to date. We report clean single electron tunneling through gate-defined quantum dots in two regimes: at zero magnetic field using the energy gap induced by a perpendicular electric field and at finite magnetic fields using Landau level confinement. The observed Coulomb blockade periodicity agrees with electrostatic simulations based on local top-gate geometry, a direct demonstration of local control over the band structure of graphene. This technology integrates quantum confinement with pristine device quality and access to vibrational modes, enabling wide applications from electromechanical sensors to quantum bits. More broadly, the ability to externally tailor the graphene bandgap over nanometer scales opens a new unexplored avenue for creating quantum devices.

  12. Readability of patient education materials in ophthalmology: a single-institution study and systematic review.

    Science.gov (United States)

    Williams, Andrew M; Muir, Kelly W; Rosdahl, Jullia A

    2016-08-03

    Patient education materials should be written at a level that is understandable for patients with low health literacy. The aims of this study are (1) to review the literature on readability of ophthalmic patient education materials and (2) to evaluate and revise our institution's patient education materials about glaucoma using evidence-based guidelines on writing for patients with low health literacy. A systematic search was conducted on the PubMed/MEDLINE database for studies that have evaluated readability level of ophthalmic patient education materials, and the reported readability scores were assessed. Additionally, we collected evidence-based guidelines for writing easy-to-read patient education materials, and these recommendations were applied to revise 12 patient education handouts on various glaucoma topics at our institution. Readability measures, including Flesch-Kincaid Grade Level (FKGL), and word count were calculated for the original and revised documents. The original and revised versions of the handouts were then scored in random order by two glaucoma specialists using the Suitability Assessment of Materials (SAM) instrument, a grading scale used to evaluate suitability of health information materials for patients. Paired t test was used to analyze changes in readability measures, word count, and SAM score between original and revised handouts. Finally, five glaucoma patients were interviewed to discuss the revised materials, and patient feedback was analyzed qualitatively. Our literature search included 13 studies that evaluated a total of 950 educational materials. Among the mean FKGL readability scores reported in these studies, the median was 11 (representing an eleventh-grade reading level). At our institution, handouts' readability averaged a tenth-grade reading level (FKGL = 10.0 ± 1.6), but revising the handouts improved their readability to a sixth-grade reading level (FKGL = 6.4 ± 1.2) (p readability and suitability of

  13. Modeling Electrolytically Top-Gated Graphene

    Directory of Open Access Journals (Sweden)

    Mišković ZL

    2010-01-01

    Full Text Available Abstract We investigate doping of a single-layer graphene in the presence of electrolytic top gating. The interfacial phenomenon is modeled using a modified Poisson–Boltzmann equation for an aqueous solution of simple salt. We demonstrate both the sensitivity of graphene’s doping levels to the salt concentration and the importance of quantum capacitance that arises due to the smallness of the Debye screening length in the electrolyte.

  14. Noise Gating Solar Images

    Science.gov (United States)

    DeForest, Craig; Seaton, Daniel B.; Darnell, John A.

    2017-08-01

    I present and demonstrate a new, general purpose post-processing technique, "3D noise gating", that can reduce image noise by an order of magnitude or more without effective loss of spatial or temporal resolution in typical solar applications.Nearly all scientific images are, ultimately, limited by noise. Noise can be direct Poisson "shot noise" from photon counting effects, or introduced by other means such as detector read noise. Noise is typically represented as a random variable (perhaps with location- or image-dependent characteristics) that is sampled once per pixel or once per resolution element of an image sequence. Noise limits many aspects of image analysis, including photometry, spatiotemporal resolution, feature identification, morphology extraction, and background modeling and separation.Identifying and separating noise from image signal is difficult. The common practice of blurring in space and/or time works because most image "signal" is concentrated in the low Fourier components of an image, while noise is evenly distributed. Blurring in space and/or time attenuates the high spatial and temporal frequencies, reducing noise at the expense of also attenuating image detail. Noise-gating exploits the same property -- "coherence" -- that we use to identify features in images, to separate image features from noise.Processing image sequences through 3-D noise gating results in spectacular (more than 10x) improvements in signal-to-noise ratio, while not blurring bright, resolved features in either space or time. This improves most types of image analysis, including feature identification, time sequence extraction, absolute and relative photometry (including differential emission measure analysis), feature tracking, computer vision, correlation tracking, background modeling, cross-scale analysis, visual display/presentation, and image compression.I will introduce noise gating, describe the method, and show examples from several instruments (including SDO

  15. An Assessment of New Applications for Single-Crystal Piezoelectric Materials

    National Research Council Canada - National Science Library

    Veitch, Lisa

    1998-01-01

    .... The purpose of this study was to determine the current commercial and military uses of the piezoelectric materials, the properties that are important to these uses, and the impact of substituting...

  16. Novel High-Activity Organic Piezoelectric Materials - From Single-Molecule Response to Energy Harvesting Films

    Science.gov (United States)

    2015-08-24

    for micro- and nano-electronic energy generation and conversion for self-powered sensors , haptic displays, and responsive shape-changing materials...conversion for self-powered sensors , haptic displays, and responsive shape-changing materials. With this project, we have established that dramatic...flexible devices and applications from touch sensors to medical implants have not been matched with solutions for energy storage, conversion and generation

  17. Method for single crystal growth of photovoltaic perovskite material and devices

    Science.gov (United States)

    Huang, Jinsong; Dong, Qingfeng

    2017-11-07

    Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.

  18. A quantum Fredkin gate

    Science.gov (United States)

    Patel, Raj B.; Ho, Joseph; Ferreyrol, Franck; Ralph, Timothy C.; Pryde, Geoff J.

    2016-01-01

    Minimizing the resources required to build logic gates into useful processing circuits is key to realizing quantum computers. Although the salient features of a quantum computer have been shown in proof-of-principle experiments, difficulties in scaling quantum systems have made more complex operations intractable. This is exemplified in the classical Fredkin (controlled-SWAP) gate for which, despite theoretical proposals, no quantum analog has been realized. By adding control to the SWAP unitary, we use photonic qubit logic to demonstrate the first quantum Fredkin gate, which promises many applications in quantum information and measurement. We implement example algorithms and generate the highest-fidelity three-photon Greenberger-Horne-Zeilinger states to date. The technique we use allows one to add a control operation to a black-box unitary, something that is impossible in the standard circuit model. Our experiment represents the first use of this technique to control a two-qubit operation and paves the way for larger controlled circuits to be realized efficiently. PMID:27051868

  19. A quantum Fredkin gate.

    Science.gov (United States)

    Patel, Raj B; Ho, Joseph; Ferreyrol, Franck; Ralph, Timothy C; Pryde, Geoff J

    2016-03-01

    Minimizing the resources required to build logic gates into useful processing circuits is key to realizing quantum computers. Although the salient features of a quantum computer have been shown in proof-of-principle experiments, difficulties in scaling quantum systems have made more complex operations intractable. This is exemplified in the classical Fredkin (controlled-SWAP) gate for which, despite theoretical proposals, no quantum analog has been realized. By adding control to the SWAP unitary, we use photonic qubit logic to demonstrate the first quantum Fredkin gate, which promises many applications in quantum information and measurement. We implement example algorithms and generate the highest-fidelity three-photon Greenberger-Horne-Zeilinger states to date. The technique we use allows one to add a control operation to a black-box unitary, something that is impossible in the standard circuit model. Our experiment represents the first use of this technique to control a two-qubit operation and paves the way for larger controlled circuits to be realized efficiently.

  20. MemFlash device: floating gate transistors as memristive devices for neuromorphic computing

    Science.gov (United States)

    Riggert, C.; Ziegler, M.; Schroeder, D.; Krautschneider, W. H.; Kohlstedt, H.

    2014-10-01

    Memristive devices are promising candidates for future non-volatile memory applications and mixed-signal circuits. In the field of neuromorphic engineering these devices are especially interesting to emulate neuronal functionality. Therefore, new materials and material combinations are currently investigated, which are often not compatible with Si-technology processes. The underlying mechanisms of the device often remain unclear and are paired with low device endurance and yield. These facts define the current most challenging development tasks towards a reliable memristive device technology. In this respect, the MemFlash concept is of particular interest. A MemFlash device results from a diode configuration wiring scheme of a floating gate transistor, which enables the persistent device resistance to be varied according to the history of the charge flow through the device. In this study, we investigate the scaling conditions of the floating gate oxide thickness with respect to possible applications in the field of neuromorphic engineering. We show that MemFlash cells exhibit essential features with respect to neuromorphic applications. In particular, cells with thin floating gate oxides show a limited synaptic weight growth together with low energy dissipation. MemFlash cells present an attractive alternative for state-of-art memresitive devices. The emulation of associative learning is discussed by implementing a single MemFlash cell in an analogue circuit.

  1. MemFlash device: floating gate transistors as memristive devices for neuromorphic computing

    International Nuclear Information System (INIS)

    Riggert, C; Ziegler, M; Kohlstedt, H; Schroeder, D; Krautschneider, W H

    2014-01-01

    Memristive devices are promising candidates for future non-volatile memory applications and mixed-signal circuits. In the field of neuromorphic engineering these devices are especially interesting to emulate neuronal functionality. Therefore, new materials and material combinations are currently investigated, which are often not compatible with Si-technology processes. The underlying mechanisms of the device often remain unclear and are paired with low device endurance and yield. These facts define the current most challenging development tasks towards a reliable memristive device technology. In this respect, the MemFlash concept is of particular interest. A MemFlash device results from a diode configuration wiring scheme of a floating gate transistor, which enables the persistent device resistance to be varied according to the history of the charge flow through the device. In this study, we investigate the scaling conditions of the floating gate oxide thickness with respect to possible applications in the field of neuromorphic engineering. We show that MemFlash cells exhibit essential features with respect to neuromorphic applications. In particular, cells with thin floating gate oxides show a limited synaptic weight growth together with low energy dissipation. MemFlash cells present an attractive alternative for state-of-art memresitive devices. The emulation of associative learning is discussed by implementing a single MemFlash cell in an analogue circuit. (paper)

  2. A Single-Molecule Propyne Trap: Highly Efficient Removal of Propyne from Propylene with Anion-Pillared Ultramicroporous Materials.

    Science.gov (United States)

    Yang, Lifeng; Cui, Xili; Yang, Qiwei; Qian, Siheng; Wu, Hui; Bao, Zongbi; Zhang, Zhiguo; Ren, Qilong; Zhou, Wei; Chen, Banglin; Xing, Huabin

    2018-03-01

    Propyne/propylene (C 3 H 4 /C 3 H 6 ) separation is a critical process for the production of polymer-grade C 3 H 6 . However, optimization of the structure of porous materials for the highly efficient removal of C 3 H 4 from C 3 H 6 remains challenging due to their similar structures and ultralow C 3 H 4 concentration. Here, it is first reported that hybrid ultramicroporous materials with pillared inorganic anions (SiF 6 2- = SIFSIX, NbOF 5 2- = NbOFFIVE) can serve as highly selective C 3 H 4 traps for the removal of trace C 3 H 4 from C 3 H 6 . Especially, it is revealed that the pyrazine-based ultramicroporous material with square grid structure for which the pore shape and functional site disposition can be varied in 0.1-0.5 Å scale to match both the shape and interacting sites of guest molecule is an interesting single-molecule trap for C 3 H 4 molecule. The pyrazine-based single-molecule trap enables extremely high C 3 H 4 uptake under ultralow concentration (2.65 mmol g -1 at 3000 ppm, one C 3 H 4 per unit cell) and record selectivity over C 3 H 6 at 298 K (>250). The single-molecule binding mode for C 3 H 4 within ultramicroporous material is validated by X-ray diffraction experiments and modeling studies. The breakthrough experiments confirm that anion-pillared ultramicroporous materials set new benchmarks for the removal of ultralow concentration C 3 H 4 (1000 ppm on SIFSIX-3-Ni, and 10 000 ppm on SIFSIX-2-Cu-i) from C 3 H 6 . © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  3. Recent R&D trends in inorganic single crystal scintillator materials for radiation detection

    Czech Academy of Sciences Publication Activity Database

    Nikl, Martin; Yoshikawa, A.

    2015-01-01

    Roč. 3, č. 4 (2015), s. 463-481 ISSN 2195-1071 R&D Projects: GA MŠk(CZ) LH14266; GA ČR GAP204/12/0805 Institutional support: RVO:68378271 Keywords : scintillator * single crystal * luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 5.359, year: 2015

  4. Feasibility study of multi-pass respiratory-gated helical tomotherapy of a moving target via binary MLC closure

    Science.gov (United States)

    Kim, Bryan; Chen, Jeff; Kron, Tomas; Battista, Jerry

    2010-11-01

    Gated radiotherapy of lung lesions is particularly complex for helical tomotherapy, due to the simultaneous motions of its three subsystems (gantry, couch and collimator). We propose a new way to implement gating for helical tomotherapy, namely multi-pass respiratory gating. In this method, gating is achieved by delivering only the beam projections that occur within a respiratory gating window, while blocking the rest of the beam projections by fully closing all collimator leaves. Due to the continuous couch motion, the planned beam projections must be delivered over multiple passes of radiation deliveries. After each pass, the patient couch is reset to its starting position, and the treatment recommences at a different phase of tumour motion to 'fill in' the previously blocked beam projections. The gating process may be repeated until the plan dose is delivered (full gating), or halted after a certain number of passes, with the entire remaining dose delivered in a final pass without gating (partial gating). The feasibility of the full gating approach was first tested for sinusoidal target motion, through experimental measurements with film and computer simulation. The optimal gating parameters for full and partial gating methods were then determined for various fractionation schemes through computer simulation, using a patient respiratory waveform. For sinusoidal motion, the PTV dose deviations of -29 to 5% observed without gating were reduced to range from -1 to 3% for a single fraction, with a 4 pass full gating. For a patient waveform, partial gating required fewer passes than full gating for all fractionation schemes. For a single fraction, the maximum allowed residual motion was only 4 mm, requiring large numbers of passes for both full (12) and partial (7 + 1) gating methods. The number of required passes decreased significantly for 3 and 30 fractions, allowing residual motion up to 7 mm. Overall, the multi-pass gating technique was shown to be a promising

  5. Feasibility study of multi-pass respiratory-gated helical tomotherapy of a moving target via binary MLC closure

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Bryan; Chen, Jeff; Battista, Jerry [London Regional Cancer Program, London Health Sciences Centre, London, ON (Canada); Kron, Tomas, E-mail: bryan.kim@lhsc.on.c [Peter MacCallum Cancer Center, Melbourne (Australia)

    2010-11-21

    Gated radiotherapy of lung lesions is particularly complex for helical tomotherapy, due to the simultaneous motions of its three subsystems (gantry, couch and collimator). We propose a new way to implement gating for helical tomotherapy, namely multi-pass respiratory gating. In this method, gating is achieved by delivering only the beam projections that occur within a respiratory gating window, while blocking the rest of the beam projections by fully closing all collimator leaves. Due to the continuous couch motion, the planned beam projections must be delivered over multiple passes of radiation deliveries. After each pass, the patient couch is reset to its starting position, and the treatment recommences at a different phase of tumour motion to 'fill in' the previously blocked beam projections. The gating process may be repeated until the plan dose is delivered (full gating), or halted after a certain number of passes, with the entire remaining dose delivered in a final pass without gating (partial gating). The feasibility of the full gating approach was first tested for sinusoidal target motion, through experimental measurements with film and computer simulation. The optimal gating parameters for full and partial gating methods were then determined for various fractionation schemes through computer simulation, using a patient respiratory waveform. For sinusoidal motion, the PTV dose deviations of -29 to 5% observed without gating were reduced to range from -1 to 3% for a single fraction, with a 4 pass full gating. For a patient waveform, partial gating required fewer passes than full gating for all fractionation schemes. For a single fraction, the maximum allowed residual motion was only 4 mm, requiring large numbers of passes for both full (12) and partial (7 + 1) gating methods. The number of required passes decreased significantly for 3 and 30 fractions, allowing residual motion up to 7 mm. Overall, the multi-pass gating technique was shown to be a

  6. Prediction of the niche effect for single flat panels with or without attached sound absorbing materials.

    Science.gov (United States)

    Sgard, Franck; Atalla, Noureddine; Nélisse, Hugues

    2015-01-01

    The sound transmission loss (STL) of a test sample measured in sound transmission facilities is affected by the opening in which it is located. This is called the niche effect. This paper uses a modal approach to study the STL of a rectangular plate with or without an attached porous material located inside a box-shaped niche. The porous material is modeled as a limp equivalent fluid. The proposed model is validated by comparison with finite element/boundary element computations. Using a condensation of the pressure fields in the niche, the niche effect is interpreted in terms of a modification of the modal blocked pressure fields acting on the panel induced by the front cavity and by a modification of the radiation efficiency of the panel modes due to the presence of the back cavity. The modal approach is then used to investigate the impact of (1) the presence of a porous material attached to the panel on the niche effect and (2) the niche effect on the assessment of the porous material insertion loss. A simplified model for the porous material based on a transfer matrix approach is also proposed to predict the STL of the system and its validity is discussed.

  7. Isolated elliptically polarized attosecond soft X-ray with high-brilliance using polarization gating of harmonics from relativistic plasmas at oblique incidence.

    Science.gov (United States)

    Chen, Zi-Yu; Li, Xiao-Ya; Li, Bo-Yuan; Chen, Min; Liu, Feng

    2018-02-19

    The production of intense isolated attosecond pulse is a major goal in ultrafast research. Recent advances in high harmonic generation from relativistic plasma mirrors under oblique incidence interactions gave rise to photon-rich attosecond pulses with circular or elliptical polarization. However, to achieve an isolated elliptical attosecond pulse via polarization gating using currently available long driving pulses remains a challenge, because polarization gating of high harmonics from relativistic plasmas is assumed only possible at normal or near-normal incidence. Here we numerically demonstrate a scheme around this problem. We show that via control of plasma dynamics by managing laser polarization, it is possible to gate an intense single attosecond pulse with high ellipticity extending to the soft X-ray regime at oblique incidence. This approach thus paves the way towards a powerful tool enabling high-time-resolution probe of dynamics of chiral systems and magnetic materials with current laser technology.

  8. Multiple Independent Gate FETs: How Many Gates Do We Need?

    OpenAIRE

    Amarù, Luca; Hills, Gage; Gaillardon, Pierre-Emmanuel; Mitra, Subhasish; De Micheli, Giovanni

    2015-01-01

    Multiple Independent Gate Field Effect Transistors (MIGFETs) are expected to push FET technology further into the semiconductor roadmap. In a MIGFET, supplementary gates either provide (i) enhanced conduction properties or (ii) more intelligent switching functions. In general, each additional gate also introduces a side implementation cost. To enable more efficient digital systems, MIGFETs must leverage their expressive power to realize complex logic circuits with few physical resources. Rese...

  9. The role of prosthetic abutment material on the stress distribution in a maxillary single implant-supported fixed prosthesis

    International Nuclear Information System (INIS)

    Peixoto, Hugo Eduardo; Bordin, Dimorvan; Del Bel Cury, Altair A.; Silva, Wander José da; Faot, Fernanda

    2016-01-01

    Purpose: Evaluate the influence of abutment's material and geometry on stress distribution in a single implant-supported prosthesis. Materials and Methods: Three-dimensional models were made based on tomographic slices of the upper middle incisor area, in which a morse taper implant was positioned and a titanium (Ti) or zirconia (ZrN) universal abutments was installed. The commercially available geometry of titanium (T) and zirconia (Z) abutments were used to draw two models, TM1 and ZM1 respectively, which served as control groups. These models were compared with 2 experimental groups were the mechanical properties of Z were applied to the titanium abutment (TM2) and vice versa for the zirconia abutment (ZM2). Subsequently, loading was simulated in two steps, starting with a preload phase, calculated with the respective friction coefficients of each materials, followed by a combined preload and chewing force. The maximum von Mises stress was described. Data were analyzed by two-way ANOVA that considered material composition, geometry and loading (p 0.05). Conclusion: The screw was the piece most intensely affected, mainly through the preload force, independent of the abutment's material. - Highlights: • The abutment's screw was the most impaired piece of the dental implant system. • The highest stress was located at first thread of the abutment's screw. • The preload is the main factor in the abutment's screw stress. • Abutment configuration and material can have a positive contribution for the stress distribution

  10. 100-nm gate lithography for double-gate transistors

    Science.gov (United States)

    Krasnoperova, Azalia A.; Zhang, Ying; Babich, Inna V.; Treichler, John; Yoon, Jung H.; Guarini, Kathryn; Solomon, Paul M.

    2001-09-01

    The double gate field effect transistor (FET) is an exploratory device that promises certain performance advantages compared to traditional CMOS FETs. It can be scaled down further than the traditional devices because of the greater electrostatic control by the gates on the channel (about twice as short a channel length for the same gate oxide thickness), has steeper sub-threshold slope and about double the current for the same width. This paper presents lithographic results for double gate FET's developed at IBM's T. J. Watson Research Center. The device is built on bonded wafers with top and bottom gates self-aligned to each other. The channel is sandwiched between the top and bottom polysilicon gates and the gate length is defined using DUV lithography. An alternating phase shift mask was used to pattern gates with critical dimensions of 75 nm, 100 nm and 125 nm in photoresist. 50 nm gates in photoresist have also been patterned by 20% over-exposure of nominal 100 nm lines. No trim mask was needed because of a specific way the device was laid out. UV110 photoresist from Shipley on AR-3 antireflective layer were used. Process windows, developed and etched patterns are presented.

  11. Local gate control in carbon nanotube quantum devices

    Science.gov (United States)

    Biercuk, Michael Jordan

    This thesis presents transport measurements of carbon nanotube electronic devices operated in the quantum regime. Nanotubes are contacted by source and drain electrodes, and multiple lithographically-patterned electrostatic gates are aligned to each device. Transport measurements of device conductance or current as a function of local gate voltages reveal that local gates couple primarily to the proximal section of the nanotube, hence providing spatially localized control over carrier density along the nanotube length. Further, using several different techniques we are able to produce local depletion regions along the length of a tube. This phenomenon is explored in detail for different contact metals to the nanotube. We utilize local gating techniques to study multiple quantum dots in carbon nanotubes produced both by naturally occurring defects, and by the controlled application of voltages to depletion gates. We study double quantum dots in detail, where transport measurements reveal honeycomb charge stability diagrams. We extract values of energy-level spacings, capacitances, and interaction energies for this system, and demonstrate independent control over all relevant tunneling rates. We report rf-reflectometry measurements of gate-defined carbon nanotube quantum dots with integrated charge sensors. Aluminum rf-SETs are electrostatically coupled to carbon nanotube devices and detect single electron charging phenomena in the Coulomb blockade regime. Simultaneous correlated measurements of single electron charging are made using reflected rf power from the nanotube itself and from the rf-SET on microsecond time scales. We map charge stability diagrams for the nanotube quantum dot via charge sensing, observing Coulomb charging diamonds beyond the first order. Conductance measurements of carbon nanotubes containing gated local depletion regions exhibit plateaus as a function of gate voltage, spaced by approximately 1e2/h, the quantum of conductance for a single

  12. Universal set of quantum gates for double-dot exchange-only spin qubits with intradot coupling

    International Nuclear Information System (INIS)

    Michielis, M De; Ferraro, E; Fanciulli, M; Prati, E

    2015-01-01

    We present a universal set of quantum gate operations based on exchange-only spin qubits in a double quantum dot, where each qubit is obtained by three electrons in the (2,1) filling. Gate operations are addressed by modulating electrostatically the tunneling barrier and the energy offset between the two dots, singly and doubly occupied respectively. We propose explicit gate sequences of single qubit operations for arbitrary rotations, and the two-qubit controlled NOT gate, to complete the universal set. The unswitchable interaction between the two electrons of the doubly occupied quantum dot is taken into account. Short gate times are obtained by employing spin density functional theory simulations. (paper)

  13. Single-sided magnetic resonance profiling in biological and materials science.

    Science.gov (United States)

    Danieli, Ernesto; Blümich, Bernhard

    2013-04-01

    Single-sided NMR was inspired by the oil industry that strived to improve the performance of well-logging tools to measure the properties of fluids confined downhole. This unconventional way of implementing NMR, in which stray magnetic and radio frequency fields are used to recover information of arbitrarily large objects placed outside the magnet, motivated the development of handheld NMR sensors. These devices have moved the technique to different scientific disciplines. The current work gives a review of the most relevant magnets and methodologies developed to generate NMR information from spatially localized regions of samples placed in close proximity to the sensors. When carried out systematically, such measurements lead to 'single-sided depth profiles' or one-dimensional images. This paper presents recent and most relevant applications as well as future perspectives of this growing branch of MRI. Copyright © 2012 Elsevier Inc. All rights reserved.

  14. Thermal neutron detector and gamma-ray spectrometer utilizing a single material

    Science.gov (United States)

    Stowe, Ashley; Burger, Arnold; Lukosi, Eric

    2017-05-02

    A combined thermal neutron detector and gamma-ray spectrometer system, including: a detection medium including a lithium chalcopyrite crystal operable for detecting thermal neutrons in a semiconductor mode and gamma-rays in a scintillator mode; and a photodetector coupled to the detection medium also operable for detecting the gamma rays. Optionally, the detection medium includes a .sup.6LiInSe.sub.2 crystal. Optionally, the detection medium comprises a compound formed by the process of: melting a Group III element; adding a Group I element to the melted Group III element at a rate that allows the Group I and Group III elements to react thereby providing a single phase I-III compound; and adding a Group VI element to the single phase I-III compound and heating; wherein the Group I element includes lithium.

  15. Bounding quantum gate error rate based on reported average fidelity

    International Nuclear Information System (INIS)

    Sanders, Yuval R; Wallman, Joel J; Sanders, Barry C

    2016-01-01

    Remarkable experimental advances in quantum computing are exemplified by recent announcements of impressive average gate fidelities exceeding 99.9% for single-qubit gates and 99% for two-qubit gates. Although these high numbers engender optimism that fault-tolerant quantum computing is within reach, the connection of average gate fidelity with fault-tolerance requirements is not direct. Here we use reported average gate fidelity to determine an upper bound on the quantum-gate error rate, which is the appropriate metric for assessing progress towards fault-tolerant quantum computation, and we demonstrate that this bound is asymptotically tight for general noise. Although this bound is unlikely to be saturated by experimental noise, we demonstrate using explicit examples that the bound indicates a realistic deviation between the true error rate and the reported average fidelity. We introduce the Pauli distance as a measure of this deviation, and we show that knowledge of the Pauli distance enables tighter estimates of the error rate of quantum gates. (fast track communication)

  16. A useful single-solution polychrome stain for plant material...Brook Cyte-Chrome I.

    Science.gov (United States)

    Stanley L Krugman; Julia F. Littlefield

    1968-01-01

    Fresh and chemically fixed sectioned plant material can be quickly stained by applying a Brook Cyte Chrome I polychrome stain. Staining time averaged only about 10 minutes. And exact timing of staining and de-staining is not as critical as with most of the commonly used stains. The overall quality is comparable to that of the traditional stains.

  17. Reconstruction of Single-Grain Orientation Distribution Functions for Crystalline Materials

    DEFF Research Database (Denmark)

    Hansen, Per Christian; Sørensen, Henning Osholm; Sükösd, Zsuzsanna

    2009-01-01

    for individual grains of the material in consideration. We study two iterative large-scale reconstruction algorithms, the algebraic reconstruction technique (ART) and conjugate gradients for least squares (CGLS), and demonstrate that right preconditioning is necessary in both algorithms to provide satisfactory...

  18. Single Molecule Nanoelectrochemistry in Electrical Junctions.

    Science.gov (United States)

    Nichols, Richard J; Higgins, Simon J

    2016-11-15

    gating. This has been referred to as to a "single molecule transistor configuration" with the gate voltage being provided by the controllable potential achieved through the electrochemical double layer. It is shown how the electrolyte medium can control such gating, with ionic liquids providing more efficient gate coupling than aqueous electrolytes. Control of the conductance of viologen molecular wires can also be achieved by encapsulating the viologen redox moiety within a molecular cage, thereby controlling its immediate environment. Molecular conductance can also be gated through multiple redox states. This has been shown for the redox moiety pyrrolo-tetrathiafulvalene, which undergoes single molecule electrochemical transistor gating through three redox states in molecular junctions. Charge transport through this junction follows a two-step hopping mechanism, demonstrating the role of the redox center in electron transfer across the molecular bridge. Recent electrolyte gating studies of rigid, conjugated redox-active metal complexes with tailored terpyridine coordinating ligands and anchors are also presented. These aforementioned studies have all been performed with gold electrode contacts. The Account concludes with recent data showing that it is now possible to study single molecule electrochemical gating with nickel electrodes. This opens up new perspectives for studying interfacial charge transfer with a wide variety of other electrode materials including semiconductor electrodes and also points toward future opportunities for coupling molecular spintronics and nanoelectrochemistry.

  19. Expert Oracle GoldenGate

    CERN Document Server

    Prusinski, Ben; Chung, Richard

    2011-01-01

    Expert Oracle GoldenGate is a hands-on guide to creating and managing complex data replication environments using the latest in database replication technology from Oracle. GoldenGate is the future in replication technology from Oracle, and aims to be best-of-breed. GoldenGate supports homogeneous replication between Oracle databases. It supports heterogeneous replication involving other brands such as Microsoft SQL Server and IBM DB2 Universal Server. GoldenGate is high-speed, bidirectional, highly-parallelized, and makes only a light impact on the performance of databases involved in replica

  20. Monte Carlo calculations of the neutron coincidence gate utilisation factor for passive neutron coincidence counting

    International Nuclear Information System (INIS)

    Bourva, L.C.A.; Croft, S.

    1999-01-01

    The general purpose neutron-photon-electron Monte Carlo N-Particle code, MCNP TM , has been used to simulate the neutronic characteristics of the on-site laboratory passive neutron coincidence counter to be installed, under Euratom Safeguards Directorate supervision, at the Sellafield reprocessing plant in Cumbria, UK. This detector is part of a series of nondestructive assay instruments to be installed for the accurate determination of the plutonium content of nuclear materials. The present work focuses on one aspect of this task, namely, the accurate calculation of the coincidence gate utilisation factor. This parameter is an important term in the interpretative model used to analyse the passive neutron coincidence count data acquired using pulse train deconvolution electronics based on the shift register technique. It accounts for the limited proportion of neutrons detected within the time interval for which the electronics gate is open. The Monte Carlo code MCF, presented in this work, represents a new evaluation technique for the estimation of gate utilisation factors. It uses the die-away profile of a neutron coincidence chamber generated either by MCNP TM , or by other means, to simulate the neutron detection arrival time pattern originating from independent spontaneous fission events. A shift register simulation algorithm, embedded in the MCF code, then calculates the coincidence counts scored within the electronics gate. The gate utilisation factor is then deduced by dividing the coincidence counts obtained with that obtained in the same Monte Carlo run, but for an ideal detection system with a coincidence gate utilisation factor equal to unity. The MCF code has been benchmarked against analytical results calculated for both single and double exponential die-away profiles. These results are presented along with the development of the closed form algebraic expressions for the two cases. Results of this validity check showed very good agreement. On this

  1. Rare-Earth Tantalates and Niobates Single Crystals: Promising Scintillators and Laser Materials

    Directory of Open Access Journals (Sweden)

    Renqin Dou

    2018-01-01

    Full Text Available Rare-earth tantalates, with high density and monoclinic structure, and niobates with monoclinic structure have been paid great attention as potential optical materials. In the last decade, we focused on the crystal growth technology of rare-earth tantalates and niobates and studied their luminescence and physical properties. A series of rare-earth tantalates and niobates crystals have been grown by the Czochralski method successfully. In this work, we summarize the research results on the crystal growth, scintillation, and laser properties of them, including the absorption and emission spectra, spectral parameters, energy levels structure, and so on. Most of the tantalates and niobates exhibit excellent luminescent properties, rich physical properties, and good chemical stability, indicating that they are potential outstanding scintillators and laser materials.

  2. The use of a single technique for the separation and determination of actinides in biological materials

    International Nuclear Information System (INIS)

    Camera, V.; Giubileo.

    1975-01-01

    For the radiotoxicological survey of workers exposed to different types of alpha-emitting contaminants, a procedure was developed which permits the estimate of Th, Pa, U, Np, Pu, Am and Cm in biological samples with a single technique. The radionuclides are extracted on a column by tri-n-octylphosphine oxide and separated by elution at different pH values. Afterwards, the quantitative determinations are done by physical methods (alpha counting or spectrometry). In the case of an accident it is possible to use a simplification of the procedure (extraction in a beaker) for checks. A procedure for the rapid determination of actinides in faeces and in nasal secretions is described

  3. Measurement of ventricular function by ECG gating during atrial fibrillation

    International Nuclear Information System (INIS)

    Bacharach, S.L.; Green, M.V.; Bonow, R.O.; Findley, S.L.; Ostrow, H.G.; Johnston, G.S.

    1981-01-01

    The assumptions necessary to perform ECG-gated cardiac studies are seemingly not valid for patients in atrial fibrillation (AF). To evaluate the effect of AF on equilibrium gated scintigraphy, beat-by-beat measurements of left-ventricular function were made on seven subjects in AF (mean heart rate 64 bpm), using a high-efficiency nonimaging detector. The parameters evaluated were ejection fraction (EF), time to end-systole (TES), peak rates of ejection and filling (PER,PFR), and their times of occurrence (TPER, TPFR). By averaging together single-beat values of EF, PER, etc., it was possible to determine the true mean values of these parameters. The single-beam mean values were compared with the corresponding parameters calculated from one ECG-gated time-activity curve (TAC) obtained by superimposing all the single-beat TACs irrespective of their length. For this population with slow heart rates, we find that the values for EF, etc., produced from ECG-gated time-activity curves, are very similar to those obtained from the single-beat data. Thus use of ECG gating at low heart rates may allow reliable estimation of average cardiac function even in subjects with AF

  4. SWNT array resonant gate MOS transistor

    Energy Technology Data Exchange (ETDEWEB)

    Arun, A; Salet, P; Ionescu, A M [NanoLab, Ecole Polytechnique Federale de Lausanne, CH-1015, Lausanne (Switzerland); Campidelli, S; Filoramo, A; Derycke, V; Goffman, M F, E-mail: marcelo.goffman@cea.fr [Laboratoire d' Electronique Moleculaire, SPEC (CNRS URA 2454), IRAMIS, CEA, Gif-sur-Yvette (France)

    2011-02-04

    We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.

  5. SWNT array resonant gate MOS transistor.

    Science.gov (United States)

    Arun, A; Campidelli, S; Filoramo, A; Derycke, V; Salet, P; Ionescu, A M; Goffman, M F

    2011-02-04

    We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.

  6. SWNT array resonant gate MOS transistor

    International Nuclear Information System (INIS)

    Arun, A; Salet, P; Ionescu, A M; Campidelli, S; Filoramo, A; Derycke, V; Goffman, M F

    2011-01-01

    We show that thin horizontal arrays of single wall carbon nanotubes (SWNTs) suspended above the channel of silicon MOSFETs can be used as vibrating gate electrodes. This new class of nano-electromechanical system (NEMS) combines the unique mechanical and electronic properties of SWNTs with an integrated silicon-based motion detection. Its electrical response exhibits a clear signature of the mechanical resonance of SWNT arrays (120-150 MHz) showing that these thin horizontal arrays behave as a cohesive, rigid and elastic body membrane with a Young's modulus in the order of 1-10 GPa and ultra-low mass. The resonant frequency can be tuned by the gate voltage and its dependence is well understood within the continuum mechanics framework.

  7. Fatigue resistance of 2 different CAD/CAM glass-ceramic materials used for single-tooth implant crowns.

    Science.gov (United States)

    Çavuşoğlu, Yeliz; Sahin, Erdal; Gürbüz, Riza; Akça, Kivanç

    2011-10-01

    To evaluate the fatigue resistance of 2 different CAD/CAM in-office monoceramic materials with single-tooth implant-supported crowns in functional area. A metal experimental model with a dental implant was designed to receive in-office CAD/CAM-generated monoceramic crowns. Laterally positioned axial dynamic loading of 300 N at 2 Hz was applied to implant-supported crowns machined from 2 different glass materials for 100,000 cycle. Failures in terms of fracture, crack formation, and chipping were macroscopically recorded and microscopically evaluated. Four of 10 aluminasilicate glass-ceramic crowns fractured at early loading cycles, the rest completed loading with a visible crack formation. Crack formation was recorded for 2 of 10 leucite glass-ceramic crowns. Others completed test without visible damage but fractured upon removal. Lack in chemical adhesion between titanium abutment and dental cement likely reduces the fatigue resistance of machinable glass-ceramic materials. However, relatively better fractural strength of leucite glass-ceramics could be taken into consideration. Accordingly, progress on developmental changes in filler composition of glass-ceramics may be promising. Machinable glass-ceramics do not possess sufficient fatigue resistance for single-tooth implant crowns in functional area.

  8. Insights into the Interactions of Amino Acids and Peptides with Inorganic Materials Using Single-Molecule Force Spectroscopy.

    Science.gov (United States)

    Das, Priyadip; Duanias-Assaf, Tal; Reches, Meital

    2017-03-06

    The interactions between proteins or peptides and inorganic materials lead to several interesting processes. For example, combining proteins with minerals leads to the formation of composite materials with unique properties. In addition, the undesirable process of biofouling is initiated by the adsorption of biomolecules, mainly proteins, on surfaces. This organic layer is an adhesion layer for bacteria and allows them to interact with the surface. Understanding the fundamental forces that govern the interactions at the organic-inorganic interface is therefore important for many areas of research and could lead to the design of new materials for optical, mechanical and biomedical applications. This paper demonstrates a single-molecule force spectroscopy technique that utilizes an AFM to measure the adhesion force between either peptides or amino acids and well-defined inorganic surfaces. This technique involves a protocol for attaching the biomolecule to the AFM tip through a covalent flexible linker and single-molecule force spectroscopy measurements by atomic force microscope. In addition, an analysis of these measurements is included.

  9. Enhanced transconductance in a double-gate graphene field-effect transistor

    Science.gov (United States)

    Hwang, Byeong-Woon; Yeom, Hye-In; Kim, Daewon; Kim, Choong-Ki; Lee, Dongil; Choi, Yang-Kyu

    2018-03-01

    Multi-gate transistors, such as double-gate, tri-gate and gate-all-around transistors are the most advanced Si transistor structure today. Here, a genuine double-gate transistor with a graphene channel is experimentally demonstrated. The top and bottom gates of the double-gate graphene field-effect transistor (DG GFET) are electrically connected so that the conductivity of the graphene channel can be modulated simultaneously by both the top and bottom gate. A single-gate graphene field-effect transistor (SG GFET) with only the top gate is also fabricated as a control device. For systematical analysis, the transfer characteristics of both GFETs were measured and compared. Whereas the maximum transconductance of the SG GFET was 17.1 μS/μm, that of the DG GFET was 25.7 μS/μm, which is approximately a 50% enhancement. The enhancement of the transconductance was reproduced and comprehensively explained by a physics-based compact model for GFETs. The investigation of the enhanced transfer characteristics of the DG GFET in this work shows the possibility of a multi-gate architecture for high-performance graphene transistor technology.

  10. A novel optical gating method for laser gated imaging

    Science.gov (United States)

    Ginat, Ran; Schneider, Ron; Zohar, Eyal; Nesher, Ofer

    2013-06-01

    For the past 15 years, Elbit Systems is developing time-resolved active laser-gated imaging (LGI) systems for various applications. Traditional LGI systems are based on high sensitive gated sensors, synchronized to pulsed laser sources. Elbit propriety multi-pulse per frame method, which is being implemented in LGI systems, improves significantly the imaging quality. A significant characteristic of the LGI is its ability to penetrate a disturbing media, such as rain, haze and some fog types. Current LGI systems are based on image intensifier (II) sensors, limiting the system in spectral response, image quality, reliability and cost. A novel propriety optical gating module was developed in Elbit, untying the dependency of LGI system on II. The optical gating module is not bounded to the radiance wavelength and positioned between the system optics and the sensor. This optical gating method supports the use of conventional solid state sensors. By selecting the appropriate solid state sensor, the new LGI systems can operate at any desired wavelength. In this paper we present the new gating method characteristics, performance and its advantages over the II gating method. The use of the gated imaging systems is described in a variety of applications, including results from latest field experiments.

  11. A Grand Challenge for CMOS Scaling: Alternate Gate Dielectrics

    Science.gov (United States)

    Wallace, Robert M.

    2001-03-01

    Many materials systems are currently under consideration as potential replacements for SiO2 as the gate dielectric material for sub-0.13 um complementary metal oxide semiconductor (CMOS) technology. The prospect of replacing SiO2 is a formidable task because the alternate gate dielectric must provide many properties that are, at a minimum, comparable to those of SiO2 yet with a much higher permittivity. A systematic examination of the required performance of gate dielectrics suggests that the key properties to consider in the selection an alternative gate dielectric candidate are (a) permittivity, band gap and band alignment to silicon, (b) thermodynamic stability, (c) film morphology, (d) interface quality, (e) compatibility with the current or expected materials to be used in processing for CMOS devices, (f) process compatibility, and (g) reliability. Many dielectrics appear favorable in some of these areas, but very few materials are promising with respect to all of these guidelines. We will review the performance requirements for materials associated with CMOS scaling, the challenges associated with these requirements, and the state-of-the-art in current research for alternate gate dielectrics. The requirements for process integration compatibility are remarkably demanding, and any serious candidates will emerge only through continued, intensive investigation.

  12. Optimisation and validation of a 3D reconstruction algorithm for single photon emission computed tomography by means of GATE simulation platform; Optimisation et validation d'un algorithme de reconstruction 3D en Tomographie d'Emission Monophotonique a l'aide de la plate forme de simulation GATE

    Energy Technology Data Exchange (ETDEWEB)

    El Bitar, Ziad [Ecole Doctorale des Sciences Fondamentales, Universite Blaise Pascal, U.F.R de Recherches Scientifiques et Techniques, 34, avenue Carnot - BP 185, 63006 Clermont-Ferrand Cedex (France); Laboratoire de Physique Corpusculaire, CNRS/IN2P3, 63177 Aubiere (France)

    2006-12-15

    Although time consuming, Monte-Carlo simulations remain an efficient tool enabling to assess correction methods for degrading physical effects in medical imaging. We have optimized and validated a reconstruction method baptized F3DMC (Fully 3D Monte Carlo) in which the physical effects degrading the image formation process were modelled using Monte-Carlo methods and integrated within the system matrix. We used the Monte-Carlo simulation toolbox GATE. We validated GATE in SPECT by modelling the gamma-camera (Philips AXIS) used in clinical routine. Techniques of threshold, filtering by a principal component analysis and targeted reconstruction (functional regions, hybrid regions) were used in order to improve the precision of the system matrix and to reduce the number of simulated photons as well as the time consumption required. The EGEE Grid infrastructures were used to deploy the GATE simulations in order to reduce their computation time. Results obtained with F3DMC were compared with the reconstruction methods (FBP, ML-EM, MLEMC) for a simulated phantom and with the OSEM-C method for the real phantom. Results have shown that the F3DMC method and its variants improve the restoration of activity ratios and the signal to noise ratio. By the use of the grid EGEE, a significant speed-up factor of about 300 was obtained. These results should be confirmed by performing studies on complex phantoms and patients and open the door to a unified reconstruction method, which could be used in SPECT and also in PET. (author)

  13. Structure of NiCrAlY coatings deposited on single-crystal alloy turbine blade material by laser cladding

    International Nuclear Information System (INIS)

    Vilar, R.; Santos, E.C.; Ferreira, P.N.; Franco, N.; Silva, R.C. da

    2009-01-01

    In the present work single and multiple layer NiCrAlY coatings were produced by laser cladding on (100) single-crystalline substrates of SRR99 Ni-based superalloy. Detailed structural characterisation and texture analysis by optical microscopy, scanning electron microscopy, X-ray diffraction and Rutherford backscattering showed that the NiCrAlY coatings consisted essentially of γ phase with yttrium oxide (Y 2 O 3 ) and a small proportion of yttrium-aluminum garnet (Al 5 Y 3 O 12 ) precipitated in the interdendritic regions. The coatings presented a columnar dendritic structure grown by epitaxial solidification on the substrate and inherited the single-crystalline nature and the orientation of the substrate. The coating material also showed a mosaicity and a defect density similar to those of the substrate. It can be expected that the protective effect of these coatings against oxidation is greatly enhanced compared with polycrystalline coatings because high diffusivity paths, such as grain boundaries, are eliminated in single-crystalline coatings, thus reducing mass transport through the coating.

  14. The Aharonov-Bohm effect in a side-gated graphene ring

    International Nuclear Information System (INIS)

    Huefner, Magdalena; Molitor, Francoise; Jacobsen, Arnhild; Pioda, Alessandro; Stampfer, Christoph; Ensslin, Klaus; Ihn, Thomas

    2010-01-01

    We investigate the magnetoresistance of a side-gated ring structure etched out of single-layer graphene. We observe Aharonov-Bohm oscillations with about 5% visibility. We are able to change the relative phases of the wave functions in the interfering paths and induce phase jumps of π in the Aharonov-Bohm oscillations by changing the voltage applied to the side gate or the back gate. The observed data can be interpreted within existing models for 'dirty metals'.

  15. Teleportation-based Toffoli gate on cluster states via the Bell state analysis

    International Nuclear Information System (INIS)

    Guo Ying; Huang Dazu; Lee, Moon Ho

    2013-01-01

    An optical Toffoli gate is demonstrated via teleportations on the six-qubit entangling cluster state generated from single-qubit photons. It is implemented on the basis of entanglement swapping of the combined quantum system with three independent Bell state measurements. The output of this gate is then restored by suitable local operations and classical communications. We evaluate the implementing performance of the Toffoli gate fidelity for the operation process in different computational bases. (paper)

  16. Optimisation and validation of methods to assess single nucleotide polymorphisms (SNPs) in archival histological material

    DEFF Research Database (Denmark)

    Andreassen, C N; Sørensen, Flemming Brandt; Overgaard

    2004-01-01

    only archival specimens are available. This study was conducted to validate protocols optimised for assessment of SNPs based on paraffin embedded, formalin fixed tissue samples.PATIENTS AND METHODS: In 137 breast cancer patients, three TGFB1 SNPs were assessed based on archival histological specimens...... precipitation).RESULTS: Assessment of SNPs based on archival histological material is encumbered by a number of obstacles and pitfalls. However, these can be widely overcome by careful optimisation of the methods used for sample selection, DNA extraction and PCR. Within 130 samples that fulfil the criteria...

  17. Using the OSL single-aliquot regenerative-dose protocol with quartz extracted from building materials in retrospective dosimetry

    DEFF Research Database (Denmark)

    Bøtter-Jensen, L.; Solongo, S.; Murray, A.S.

    2000-01-01

    We report on the application of the single-aliquot regenerative-dose (SAR) protocol to the optically stimulated luminescence signal from quartz extracted from fired bricks acid unfired mortar in retrospective dosimetry. The samples came from a radioactive materials storage facility, with ambient...... dose rates of about 0.1 mGy/h. A detailed dose-depth profile was analysed from one brick, and compared with dose records from area TL dosemeters. Small-aliquot dose-distributions were analysed from the mortar samples; one associated with the exposed brick, and one from a remote site exposed only...

  18. Single ion implantation for single donor devices using Geiger mode detectors

    International Nuclear Information System (INIS)

    Bielejec, E; Seamons, J A; Carroll, M S

    2010-01-01

    Electronic devices that are designed to use the properties of single atoms such as donors or defects have become a reality with recent demonstrations of donor spectroscopy, single photon emission sources, and magnetic imaging using defect centers in diamond. Ion implantation, an industry standard for atom placement in materials, requires augmentation for single ion capability including a method for detecting a single ion arrival. Integrating single ion detection techniques with the single donor device construction region allows single ion arrival to be assured. Improving detector sensitivity is linked to improving control over the straggle of the ion as well as providing more flexibility in lay-out integration with the active region of the single donor device construction zone by allowing ion sensing at potentially greater distances. Using a remotely located passively gated single ion Geiger mode avalanche diode (SIGMA) detector we have demonstrated 100% detection efficiency at a distance of >75 μm from the center of the collecting junction. This detection efficiency is achieved with sensitivity to ∼600 or fewer electron-hole pairs produced by the implanted ion. Ion detectors with this sensitivity and integrated with a thin dielectric, for example a 5 nm gate oxide, using low energy Sb implantation would have an end of range straggle of -1 and 10 -4 for operation temperatures of ∼300 K and ∼77 K, respectively. Low temperature operation and reduced false, 'dark', counts are critical to achieving high confidence in single ion arrival. For the device performance in this work, the confidence is calculated as a probability of >98% for counting one and only one ion for a false count probability of 10 -4 at an average ion number per gated window of 0.015.

  19. Luminescence properties of Tm3+ ions single-doped YF3 materials in an unconventional excitation region.

    Science.gov (United States)

    Chen, Yuan; Liu, Qing; Lin, Han; Yan, Xiaohong

    2018-05-01

    According to the spectral distribution of solar radiation at the earth's surface, under the excitation region of 1150 to 1350 nm, the up-conversion luminescence of Tm 3+ ions was investigated. The emission bands were matched well with the spectral response region of silicon solar cells, achieved by Tm 3+ ions single-doped yttrium fluoride (YF 3 ) phosphor, which was different from the conventional Tm 3+ /Yb 3+ ion couple co-doped materials. Additionally, the similar emission bands of Tm 3+ ions were achieved under excitation in the ultraviolet region. It is expected that via up-conversion and down-conversion routes, Tm 3+ -sensitized materials could convert photons to the desired wavelengths in order to reduce the energy loss of silicon solar cells, thereby enhancing the photovoltaic efficiency. Copyright © 2018 John Wiley & Sons, Ltd.

  20. Influence of Bias on the Friction Imaging of Ferroelectric Domains in Single Crystal Barium Titanate Energy Storage Materials

    Directory of Open Access Journals (Sweden)

    Lan Chen

    2014-01-01

    Full Text Available The friction imaging of newlycleaved surface domains of single crystal BaTiO3 energy storage materials under both positive and negative voltage bias is investigated by scanning force microscope. When the bias was applied and reversed, three regions with different brightness and contrast in friction image indicated different response to the biases: the friction image of domain A displayed a great change in brightness while domains B and C displayed only a very small change. Possible mechanisms of the interesting phenomena originating from different static force between different charged tip and the periodical array of surface charges inside the inplane domains were proposed. These results provide a new method for the determination of the polarization direction for the domain parallel to the surface and may be useful in the investigation of ferroelectric energy storage materials, especially the relationship between the polarization direction of domain and the bias.

  1. Using the OSL single-aliquot regenerative-dose protocol with quartz extracted from building materials in retrospective dosimetry

    International Nuclear Information System (INIS)

    Boetter-Jensen, L.; Solongo, S.; Murray, A.S.; Banerjee, D.; Jungner, H.

    2000-01-01

    We report on the application of the single-aliquot regenerative-dose (SAR) protocol to the optically stimulated luminescence signal from quartz extracted from fired bricks and unfired mortar in retrospective dosimetry. The samples came from a radioactive materials storage facility, with ambient dose rates of about 0.1 mGy/h. A detailed dose-depth profile was analysed from one brick, and compared with dose records from area TL dosemeters. Small-aliquot dose-distributions were analysed from the mortar samples; one associated with the exposed brick, and one from a remote site exposed only to background radiation. We conclude that unfired materials have considerable potential in retrospective dosimetry

  2. Nano-CMOS gate dielectric engineering

    CERN Document Server

    Wong, Hei

    2011-01-01

    According to Moore's Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devic

  3. Gate Control Coefficient Effect on CNFET Characteristic

    International Nuclear Information System (INIS)

    Sanudin, Rahmat; Ma'Radzi, Ahmad Alabqari; Nayan, Nafarizal

    2009-01-01

    The development of carbon nanotube field-effect transistor (CNFET) as alternative to existing transistor technology has long been published and discussed. The emergence of this device offers new material and structure in building a transistor. This paper intends to do an analysis of gate control coefficient effect on CNFET performance. The analysis is based on simulation study of current-voltage (I-V) characteristic of ballistic CNFET. The simulation study used the MOSFET-like CNFET mathematical model to establish the device output characteristic. Based on the analysis of simulation result, it is found that the gate control coefficient contributes to a significant effect on the performance of CNFET. The result also shown the parameter could help to improve the device performance in terms of its output and response as well. Nevertheless, the characteristic of the carbon nanotube that acts as the channel is totally important in determining the performance of the transistor as a whole.

  4. Water-gel for gating graphene transistors.

    Science.gov (United States)

    Kim, Beom Joon; Um, Soong Ho; Song, Woo Chul; Kim, Yong Ho; Kang, Moon Sung; Cho, Jeong Ho

    2014-05-14

    Water, the primary electrolyte in biology, attracts significant interest as an electrolyte-type dielectric material for transistors compatible with biological systems. Unfortunately, the fluidic nature and low ionic conductivity of water prevents its practical usage in such applications. Here, we describe the development of a solid state, megahertz-operating, water-based gate dielectric system for operating graphene transistors. The new electrolyte systems were prepared by dissolving metal-substituted DNA polyelectrolytes into water. The addition of these biocompatible polyelectrolytes induced hydrogelation to provide solid-state integrity to the system. They also enhanced the ionic conductivities of the electrolytes, which in turn led to the quick formation of an electric double layer at the graphene/electrolyte interface that is beneficial for modulating currents in graphene transistors at high frequencies. At the optimized conditions, the Na-DNA water-gel-gated flexible transistors and inverters were operated at frequencies above 1 MHz and 100 kHz, respectively.

  5. Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors

    Science.gov (United States)

    Mao, Ling-Feng; Ning, Huansheng; Huo, Zong-Liang; Wang, Jin-Yan

    2015-12-01

    A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (>20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs.

  6. Physical Modeling of Gate-Controlled Schottky Barrier Lowering of Metal-Graphene Contacts in Top-Gated Graphene Field-Effect Transistors.

    Science.gov (United States)

    Mao, Ling-Feng; Ning, Huansheng; Huo, Zong-Liang; Wang, Jin-Yan

    2015-12-17

    A new physical model of the gate controlled Schottky barrier height (SBH) lowering in top-gated graphene field-effect transistors (GFETs) under saturation bias condition is proposed based on the energy conservation equation with the balance assumption. The theoretical prediction of the SBH lowering agrees well with the experimental data reported in literatures. The reduction of the SBH increases with the increasing of gate voltage and relative dielectric constant of the gate oxide, while it decreases with the increasing of oxide thickness, channel length and acceptor density. The magnitude of the reduction is slightly enhanced under high drain voltage. Moreover, it is found that the gate oxide materials with large relative dielectric constant (>20) have a significant effect on the gate controlled SBH lowering, implying that the energy relaxation of channel electrons should be taken into account for modeling SBH in GFETs.

  7. Structured-gate organic field-effect transistors

    International Nuclear Information System (INIS)

    Aljada, Muhsen; Pandey, Ajay K; Velusamy, Marappan; Burn, Paul L; Meredith, Paul; Namdas, Ebinazar B

    2012-01-01

    We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO 2 ) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends. (paper)

  8. Structured-gate organic field-effect transistors

    Science.gov (United States)

    Aljada, Muhsen; Pandey, Ajay K.; Velusamy, Marappan; Burn, Paul L.; Meredith, Paul; Namdas, Ebinazar B.

    2012-06-01

    We report the fabrication and electrical characteristics of structured-gate organic field-effect transistors consisting of a gate electrode patterned with three-dimensional pillars. The pillar gate electrode was over-coated with a gate dielectric (SiO2) and solution processed organic semiconductors producing both unipolar p-type and bipolar behaviour. We show that this new structured-gate architecture delivers higher source-drain currents, higher gate capacitance per unit equivalent linear channel area, and enhanced charge injection (electrons and/or holes) versus the conventional planar structure in all modes of operation. For the bipolar field-effect transistor (FET) the maximum source-drain current enhancements in p- and n-channel mode were >600% and 28%, respectively, leading to p and n charge mobilities with the same order of magnitude. Thus, we have demonstrated that it is possible to use the FET architecture to manipulate and match carrier mobilities of material combinations where one charge carrier is normally dominant. Mobility matching is advantageous for creating organic logic circuit elements such as inverters and amplifiers. Hence, the method represents a facile and generic strategy for improving the performance of standard organic semiconductors as well as new materials and blends.

  9. DC Characteristics of AlGaN/GaN HEMTs Using a Dual-Gate Structure.

    Science.gov (United States)

    Hong, Sejun; Rana, Abu ul Hassan Sarwar; Heo, Jun-Woo; Kim, Hyun-Seok

    2015-10-01

    Multiple techniques such as fluoride-based plasma treatment, a p-GaN or p-AlGaN gate contact, and a recessed gate structure have been employed to modulate the threshold voltage of AlGaN/GaN-based high-electron-mobility transistors (HEMTs). In this study, we present dual-gate AlGaN/GaN HEMTs grown on a Si substrate, which effectively shift the threshold voltage in the positive direction. Experimental data show that the threshold voltage is shifted from -4.2 V in a conventional single-gate HEMT to -2.8 V in dual-gate HEMTs. It is evident that a second gate helps improve the threshold voltage by reducing the two-dimensional electron gas density in the channel. Furthermore, the maximum drain current, maximum transconductance, and breakdown voltage values of a single-gate device are not significantly different from those of a dual-gate device. For the fabricated single- and dual-gate devices, the values of the maximum drain current are 430 mA/mm and 428 mA/mm, respectively, whereas the values of the maximum transconductance are 83 mS/mm and 75 mS/mm, respectively.

  10. Analyzing the effect of gate dielectric on the leakage currents

    Directory of Open Access Journals (Sweden)

    Sakshi

    2016-01-01

    Full Text Available An analytical threshold voltage model for MOSFETs has been developed using different gate dielectric oxides by using MATLAB software. This paper explains the dependency of threshold voltage on the dielectric material. The variation in the subthreshold currents with the change in the threshold voltage sue to the change of dielectric material has also been studied.

  11. Development of a dual ion beam system with single accelerator for materials studies

    International Nuclear Information System (INIS)

    Suzuki, Kazumichi; Nishimura, Eiichi; Hashimoto, Tsuneyuki

    1986-01-01

    The dual ion beam accelerator system has been developed for simulation studies of neutron radiation damage of structural materials for nuclear fusion and fission reactors. One accelerator is used to accelerate two different kinds of ions, which are generated in the ion source simultaneously. One of these ions is selected alternatively by switching the magnetic field of the analyzing magnet, and is then accelerated to the desired energy value. The system is controlled by a microcomputer. The accelerator used in the system is a conventional 400 kV Cockcroft-Walton accelerator. The performance test by the acceleration of He + and Ar + shows that the system is capable of accelerating two ions alternatively with a switching time of less than 22 s. The beam current obtained with the microcomputer control is more than 98% of the current obtained by manual operation. (orig.)

  12. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  13. Penn State DOE GATE Program

    Energy Technology Data Exchange (ETDEWEB)

    Anstrom, Joel

    2012-08-31

    The Graduate Automotive Technology Education (GATE) Program at The Pennsylvania State University (Penn State) was established in October 1998 pursuant to an award from the U.S. Department of Energy (U.S. DOE). The focus area of the Penn State GATE Program is advanced energy storage systems for electric and hybrid vehicles.

  14. Piezoconductivity of gated suspended graphene

    NARCIS (Netherlands)

    Medvedyeva, M.V.; Blanter, Y.M.

    2011-01-01

    We investigate the conductivity of graphene sheet deformed over a gate. The effect of the deformation on the conductivity is twofold: The lattice distortion can be represented as pseudovector potential in the Dirac equation formalism, whereas the gate causes inhomogeneous density redistribution. We

  15. Decontamination of chemical and biological warfare agents with a single multi-functional material.

    Science.gov (United States)

    Amitai, Gabi; Murata, Hironobu; Andersen, Jill D; Koepsel, Richard R; Russell, Alan J

    2010-05-01

    We report the synthesis of new polymers based on a dimethylacrylamide-methacrylate (DMAA-MA) co-polymer backbone that support both chemical and biological agent decontamination. Polyurethanes containing the redox enzymes glucose oxidase and horseradish peroxidase can convert halide ions into active halogens and exert striking bactericidal activity against gram positive and gram negative bacteria. New materials combining those biopolymers with a family of N-alkyl 4-pyridinium aldoxime (4-PAM) halide-acrylate co-polymers offer both nucleophilic activity for the detoxification of organophosphorus nerve agents and internal sources of halide ions for generation of biocidal activity. Generation of free bromine and iodine was observed in the combined material resulting in bactericidal activity of the enzymatically formed free halogens that caused complete kill of E. coli (>6 log units reduction) within 1 h at 37 degrees C. Detoxification of diisopropylfluorophosphate (DFP) by the polyDMAA MA-4-PAM iodide component was dose-dependent reaching 85% within 30 min. A subset of 4-PAM-halide co-polymers was designed to serve as a controlled release reservoir for N-hydroxyethyl 4-PAM (HE 4-PAM) molecules that reactivate nerve agent-inhibited acetylcholinesterase (AChE). Release rates for HE 4-PAM were consistent with hydrolysis of the HE 4-PAM from the polymer backbone. The HE 4-PAM that was released from the polymer reactivated DFP-inhibited AChE at a similar rate to the oxime antidote 4-PAM. Copyright (c) 2010 Elsevier Ltd. All rights reserved.

  16. Multi detector computed tomography (MDCT) of the aortic root; ECG-gated verses non-ECG-gated examinations

    International Nuclear Information System (INIS)

    Kristiansen, Joanna; Guenther, Anne; Aalokken, Trond Mogens; Andersen, Rune

    2011-01-01

    Purpose: Motion artifacts may degrade a conventional CT examination of the ascending aorta and hinder accurate diagnosis. We quantitatively compared retrospectively electrocardiographic (ECG) -gated multi detector computed tomography (MDCT) with non-ECG-gated MDCT in order to demonstrate whether or not one of the methods should be preferred. Method: The study included seventeen patients with surgically reconstructed aortic root and reimplanted coronary arteries. All patients had undergone both non-gated MDCT and retrospectively ECG-gated MDCT employing a stringently modulated tube current with single phase image reconstruction. The incidence of motion artifacts in the left main coronary artery (LM), proximal right coronary artery (RCA), and aortic root and ascending aorta were rated using a four point scale. The effective dose for each scan was calculated and normalized to a 15 cm scan length. Statistical analysis of motion artifacts and radiation dose was performed using Wilcoxon matched pairs signed rank sum test. Results: A significant reduction in motion artifacts was found in all three vessels in images from the retrospectively ECG-gated scans (LM: P = 0.005, RCA: P = 0.015, aorta: P = 0.003). The mean normalized effective radiation dose was 3.69 mSv (±1.03) for the non-ECG-gated scans and 16.37 mSv (±2.53) for the ECG-gated scans. Conclusion: Retrospective ECG-gating with single phase reconstruction significantly reduces the incidence of motion artifacts in the aortic root and the proximal portion of the coronary arteries but at the expense of a fourfold increase in radiation dose.

  17. Topologically protected gates for quantum computation with non-Abelian anyons in the Pfaffian quantum Hall state

    Science.gov (United States)

    Georgiev, Lachezar S.

    2006-12-01

    We extend the topological quantum computation scheme using the Pfaffian quantum Hall state, which has been recently proposed by Das Sarma , in a way that might potentially allow for the topologically protected construction of a universal set of quantum gates. We construct, for the first time, a topologically protected controlled-NOT gate, which is entirely based on quasihole braidings of Pfaffian qubits. All single-qubit gates, except for the π/8 gate, are also explicitly implemented by quasihole braidings. Instead of the π/8 gate we try to construct a topologically protected Toffoli gate, in terms of the controlled-phase gate and CNOT or by a braid-group-based controlled-controlled- Z precursor. We also give a topologically protected realization of the Bravyi-Kitaev two-qubit gate g3 .

  18. Photovoltaic and photothermoelectric effect in a double-gated WSe2 device.

    Science.gov (United States)

    Groenendijk, Dirk J; Buscema, Michele; Steele, Gary A; Michaelis de Vasconcellos, Steffen; Bratschitsch, Rudolf; van der Zant, Herre S J; Castellanos-Gomez, Andres

    2014-10-08

    Tungsten diselenide (WSe2), a semiconducting transition metal dichalcogenide (TMDC), shows great potential as active material in optoelectronic devices due to its ambipolarity and direct bandgap in its single-layer form. Recently, different groups have exploited the ambipolarity of WSe2 to realize electrically tunable PN junctions, demonstrating its potential for digital electronics and solar cell applications. In this Letter, we focus on the different photocurrent generation mechanisms in a double-gated WSe2 device by measuring the photocurrent (and photovoltage) as the local gate voltages are varied independently in combination with above- and below-bandgap illumination. This enables us to distinguish between two main photocurrent generation mechanisms, the photovoltaic and photothermoelectric effect. We find that the dominant mechanism depends on the defined gate configuration. In the PN and NP configurations, photocurrent is mainly generated by the photovoltaic effect and the device displays a maximum responsivity of 0.70 mA/W at 532 nm illumination and rise and fall times close to 10 ms. Photocurrent generated by the photothermoelectric effect emerges in the PP configuration and is a factor of 2 larger than the current generated by the photovoltaic effect (in PN and NP configurations). This demonstrates that the photothermoelectric effect can play a significant role in devices based on WSe2 where a region of strong optical absorption, caused by, for example, an asymmetry in flake thickness or optical absorption of the electrodes, generates a sizable thermal gradient upon illumination.

  19. Evaluation of coronary artery disease by helical CT using retrospective ECG-gating

    International Nuclear Information System (INIS)

    Kawawa, Yoko

    2001-01-01

    The purpose of this study is to evaluate the usefulness of helical CT using retrospective ECG-gating for visualization of the coronary artery and detection of coronary artery disease. We performed a coronary artery phantom study and established this new application, with 1-mm collimation, 1-mm table increment, and 0.1-mm reconstruction (0.8 sec/rotation). Helical CT of 31 patients with 39 coronary artery diseases (34 coronary artery stenoses, 1 vasospastic angina, 1 coronary artery dissection, 1 coronary artery ectasia and 2 coronary artery aneurysms) was performed in a single breath hold and ECG-gating without and with intravenous injection of nonionic iodine contrast material. We selected the images which were not affected by cardiac motion from the reconstruction images, in order to visualize the coronary artery for detection of coronary artery disease. The coronary artery was well visualized in 32 out of 39 vessels (82%). A good visualization of the coronary artery was correlated with the heart rate. Further, in this well visualized group, coronary artery diseases were detected in 24 out of 31 cases (77%). One case of vasospastic angina was not included. It was difficult to detect coronary artery disease in cases of heavily calcified vessels or in the left circumflex artery. Helical CT using this retrospective ECG-gating is a useful noninvasive examination for evaluation of coronary artery disease. (author)

  20. Graphene-ferroelectric metadevices for nonvolatile memory and reconfigurable logic-gate operations

    Science.gov (United States)

    Kim, Woo Young; Kim, Hyeon-Don; Kim, Teun-Teun; Park, Hyun-Sung; Lee, Kanghee; Choi, Hyun Joo; Lee, Seung Hoon; Son, Jaehyeon; Park, Namkyoo; Min, Bumki

    2016-01-01

    Memory metamaterials are artificial media that sustain transformed electromagnetic properties without persistent external stimuli. Previous memory metamaterials were realized with phase-change materials, such as vanadium dioxide or chalcogenide glasses, which exhibit memory behaviour with respect to electrically/optically induced thermal stimuli. However, they require a thermally isolated environment for longer retention or strong optical pump for phase-change. Here we demonstrate electrically programmable nonvolatile memory metadevices realised by the hybridization of graphene, a ferroelectric and meta-atoms/meta-molecules, and extend the concept further to establish reconfigurable logic-gate metadevices. For a memory metadevice having a single electrical input, amplitude, phase and even the polarization multi-states were clearly distinguishable with a retention time of over 10 years at room temperature. Furthermore, logic-gate functionalities were demonstrated with reconfigurable logic-gate metadevices having two electrical inputs, with each connected to separate ferroelectric layers that act as the multi-level controller for the doping level of the sandwiched graphene layer.

  1. Single-step generation of fluorophore-encapsulated gold nanoparticle core-shell materials

    International Nuclear Information System (INIS)

    Sardar, R; Shem, P M; Pecchia-Bekkum, C; Bjorge, N S; Shumaker-Parry, J S

    2010-01-01

    We report a simple route to produce fluorophore-encapsulated gold nanoparticles (AuNPs) in a single step under aqueous conditions using the fluorophore 1-pyrenemethylamine (PMA). Different amounts of PMA were used and the resulting core-shell gold nanoparticles were analyzed using UV-visible absorption spectroscopy, fluorescence spectroscopy, and transmission and scanning electron microscopy. Electron microscopy analysis shows nanoparticles consisting of a gold nanoparticle core which is encapsulated with a lower contrast shell. In the UV-visible spectra, we observed a significant red shift (37 nm) of the localized surface plasmon resonance (LSPR) absorption maximum (λ max ) compared to citrate-stabilized AuNPs of a similar size. We attribute the prominent LSPR wavelength shift for PMA-AuNP conjugates to the increase in the local dielectric environment near the gold nanoparticles due to the shell formation. This simple, aqueous-based synthesis is a new approach to the production of fluorophore-encapsulated AuNPs that could be applicable in biological sensing systems and photonic device fabrication.

  2. Antiferromagnetic Mott insulating state in the single-component molecular material Pd(tmdt)2

    Science.gov (United States)

    Takagi, Rina; Sari, Dita Puspita; Mohd-Tajudin, Saidah Sakinah; Ashi, Retno; Watanabe, Isao; Ishibashi, Shoji; Miyagawa, Kazuya; Ogura, Satomi; Zhou, Biao; Kobayashi, Akiko; Kanoda, Kazushi

    2017-12-01

    A family of compounds built by a single molecular species, M (tmdt) 2, with a metal ion, M , and organic ligands, tmdt, affords diverse electronic phases due to M -dependent interplays between d electrons in M , and π electrons in tmdt. We investigated the spin state in Pd (tmdt) 2 , a π -electron system without a d -electron contribution, through 1H nuclear magnetic resonance (NMR) and muon-spin resonance experiments. The temperature profiles of the NMR linewidth, relaxation rate, and asymmetry parameter in muon decay show an inhomogeneous antiferromagnetic order with moments distributed around ˜0.1 μB that onsets at above 100 K. This result provides an example of the antiferromagnetic order in a pure π -electron system in M (tmdt) 2, and it demonstrates that correlation among the π electrons is so strong as to give the Néel temperature over 100 K. The small and inhomogeneous moments are understandable as the crucial disorder effect in correlated electrons situated near the Mott transition.

  3. On photonic controlled phase gates

    International Nuclear Information System (INIS)

    Kieling, K; Eisert, J; O'Brien, J L

    2010-01-01

    As primitives for entanglement generation, controlled phase gates have a central role in quantum computing. Especially in ideas realizing instances of quantum computation in linear optical gate arrays, a closer look can be rewarding. In such architectures, all effective nonlinearities are induced by measurements. Hence the probability of success is a crucial parameter of such quantum gates. In this paper, we discuss this question for controlled phase gates that implement an arbitrary phase with one and two control qubits. Within the class of post-selected gates in dual-rail encoding with vacuum ancillas, we identify the optimal success probabilities. We construct networks that allow for implementation using current experimental capabilities in detail. The methods employed here appear specifically useful with the advent of integrated linear optical circuits, providing stable interferometers on monolithic structures.

  4. Universal control and measuring system for modern classic and amorphous magnetic materials single/on-line strip testers

    Science.gov (United States)

    Zemánek, Ivan; Havlíček, Václav

    2006-09-01

    A new universal control and measuring system for classic and amorphous soft magnetic materials single/on-line strip testing has been developed at the Czech Technical University in Prague. The measuring system allows to measure magnetization characteristic and specific power losses of different tested materials (strips) at AC magnetization of arbitrary magnetic flux density waveform at wide range of frequencies 20 Hz-20 kHz. The measuring system can be used for both single strip testing in laboratories and on-line strip testing during the production process. The measuring system is controlled by two-stage master-slave control system consisting of the external PC (master) completed by three special A/D measuring plug-in boards, and local executing control unit (slave) with one-chip microprocessor 8051, connected with PC by the RS232 serial line. The "user friendly" powerful control software implemented on the PC and the effective program code for the microprocessor give possibility for full automatic measurement with high measuring power and high measuring accuracy.

  5. Reexamination of cross-sections for fast neutrons by computational checking of single material integral experiments

    International Nuclear Information System (INIS)

    Schriewer, J.; Hehn, G.; Mattes, M.

    1976-06-01

    Transmission experiments for fast neutrons and pure materials offer the possibility to check the accuracy of nuclear data compilations by recalculating the measured discharge spectra. In this paper the calculations were mainly based on two Benchmark experiments with pure iron carried out at the Karlsruhe Nuclear Research Center. One of the experiments employed a 252 Cf fission source and spherically symmetric arrangement; the other was based on transmission of an iron cylinder by 14-MeV neutrons from a D+T source. The checking calculations were based on the data compilation ENDF/B-IV (occasionally also ENDF/B-III) and on the transport codes ANISN (1D) and DOT-2 (2D) with lined up ESTOQ (for calculating the first-collision source). The calculations with the Cf source showed good agreement with the results of measurement, whereas the checking of the arrangement with 14 MeV neutrons yielded a marked underestimation of the neutron flux density in the range of 2 MeV up to 14 MeV. The discussion of the results including the choice of codes was done on the basis of a literature review on the Benchmark experiments for iron with fast neutrons carried out until now. (orig.) [de

  6. Histopathological Alterations after Single Epidural Injection of Ropivacaine, Methylprednizolone Acetate, or Contrast Material in Swine

    International Nuclear Information System (INIS)

    Kitsou, Maria-Chrysanthi; Kostopanagiotou, Georgia; Kalimeris, Konstantinos; Vlachodimitropoulos, Demetrios; Soultanis, Konstantinos; Batistaki, Chrysanthi; Kelekis, Alexis

    2011-01-01

    Purpose: The consequences from the injection of different types of drugs in the epidural space remains unknown. Increasing evidence suggests that localized inflammation, fibrosis, and arachnoiditis can complicate sequential epidural blockades, or even epidural contrast injection. We investigate the in vivo effect of epidural injections in the epidural space in an animal model. Materials and Methods: A group of ten male adult pigs, five punctures to each at distinct vertebral interspaces under general anesthesia, were examined, testing different drugs, used regularly in the epidural space (iopamidol, methylprednisolone acetate, ropivacaine). Each site was marked with a percutaneous hook wire marker. Histological analysis of the epidural space, the meninges, and the underlying spinal cord of the punctured sites along with staining for caspase-3 followed 20 days later. Results: The epidural space did not manifest adhesions or any other pathology, and the outer surface of the dura was not impaired in any specimen. The group that had the contrast media injection showed a higher inflammation response compared to the other groups (P = 0.001). Positive staining for caspase-3 was limited to <5% of neurons with all substances used. Conclusion: No proof of arachnoiditis and/or fibrosis was noted in the epidural space with the use of the above-described drugs. A higher inflammation rate was noted with the use of contrast media.

  7. Analytical V TH and S models for (DMG-GC-stack) surrounding-gate MOSFET

    Science.gov (United States)

    Aouaj, Abdellah; Bouziane, Ahmed; Nouaçry, Ahmed

    2012-01-01

    This article presents an analytical model of surface potential, threshold voltage and subthreshold swing for a new structure of surrounding-gate MOSFET by combining dual-material gate, graded channel and gate stack. By comparison with published results, it is shown that the new MOSFET structure can improve the immunity of CMOS-based devices in the nanoscale regime against short-channel effects.

  8. Gated equilibrium bloodpool scintigraphy

    International Nuclear Information System (INIS)

    Reinders Folmer, S.C.C.

    1981-01-01

    This thesis deals with the clinical applications of gated equilibrium bloodpool scintigraphy, performed with either a gamma camera or a portable detector system, the nuclear stethoscope. The main goal has been to define the value and limitations of noninvasive measurements of left ventricular ejection fraction as a parameter of cardiac performance in various disease states, both for diagnostic purposes as well as during follow-up after medical or surgical intervention. Secondly, it was attempted to extend the use of the equilibrium bloodpool techniques beyond the calculation of ejection fraction alone by considering the feasibility to determine ventricular volumes and by including the possibility of quantifying valvular regurgitation. In both cases, it has been tried to broaden the perspective of the observations by comparing them with results of other, invasive and non-invasive, procedures, in particular cardiac catheterization, M-mode echocardiography and myocardial perfusion scintigraphy. (Auth.)

  9. Robust Hadamard gate for optical and ion trap holonomic quantum computers

    OpenAIRE

    Kuvshinov, V. I.; Kuzmin, A. V.

    2005-01-01

    We consider one possible implementation of Hadamard gate for optical and ion trap holonomic quantum computers. The expression for its fidelity determining the gate stability with respect to the errors in the single-mode squeezing parameter control is analytically derived. We demonstrate by means of this expression the cancellation of the squeezing control errors up to the fourth order on their magnitude.

  10. The additive prognostic value of perfusion and functional data assessed by quantitative gated SPECT in women

    NARCIS (Netherlands)

    Y.G.C.J. America (Yves); J.J. Bax (Jeroen); H. Boersma (Eric); M. Stokkel (Marcel); E.E. van der Wall (Ernst)

    2009-01-01

    textabstractBackground: The aim of this study was to assess the prognostic value of technetium-99m tetrofosmin gated SPECT imaging in women using quantitative gated single photon emission computed tomography (SPECT) imaging. Methods: We followed 453 consecutive female patients. Average follow-up was

  11. All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits

    International Nuclear Information System (INIS)

    Renteria, J.; Jiang, C.; Yan, Z.; Samnakay, R.; Goli, P.; Pope, T. R.; Salguero, T. T.; Wickramaratne, D.; Lake, R. K.; Khitun, A. G.; Balandin, A. A.

    2014-01-01

    We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe 2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe 2 –Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials

  12. All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits

    Science.gov (United States)

    Renteria, J.; Samnakay, R.; Jiang, C.; Pope, T. R.; Goli, P.; Yan, Z.; Wickramaratne, D.; Salguero, T. T.; Khitun, A. G.; Lake, R. K.; Balandin, A. A.

    2014-01-01

    We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe2-Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

  13. All-metallic electrically gated 2H-TaSe{sub 2} thin-film switches and logic circuits

    Energy Technology Data Exchange (ETDEWEB)

    Renteria, J.; Jiang, C.; Yan, Z. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Samnakay, R.; Goli, P. [Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Pope, T. R.; Salguero, T. T. [Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States); Wickramaratne, D.; Lake, R. K. [Laboratory for Terascale and Terahertz Electronics, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Khitun, A. G. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States)

    2014-01-21

    We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe{sub 2} were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe{sub 2}–Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

  14. Fabrication of GaAs nanowire devices with self-aligning W-gate electrodes using selective-area MOVPE

    International Nuclear Information System (INIS)

    Ooike, N.; Motohisa, J.; Fukui, T.

    2004-01-01

    We propose and demonstrate a novel self-aligning process for fabricating the tungsten (W) gate electrode of GaAs nanowire FETs by using selective-area metalorganic vapor phase epitaxy (SA-MOVPE) where SiO 2 /W composite films are used to mask the substrates. First, to study the growth process and its dependence on mask materials, GaAs wire structures were grown on masked substrates partially covered with a single W layer or SiO 2 /W composite films. We found that lateral growth over the masked regions could be suppressed when a wire along the [110] direction and a SiO 2 /W composite mask were used. Using this composite mask, we fabricated GaAs narrow channel FETs using W as a Schottky gate electrode, and we were able to observe FET characteristics at room temperature

  15. Quantum logic gates generated by SC-charge qubits coupled to a resonator

    International Nuclear Information System (INIS)

    Obada, A-S F; Hessian, H A; Mohamed, A-B A; Homid, Ali H

    2012-01-01

    We propose some quantum logic gates by using SC-charge qubits coupled to a resonator to study two types of quantum operation. By applying a classical magnetic field with the flux, a simple rotation on the target qubit is generated. Single and two-qubit gates of quantum logic gates are realized. Two-qubit joint operations are firstly generated by applying a classical magnetic field with the flux, and secondly by applying a classical magnetic field with the flux when qubits are placed a quarter of the distance along the resonator. A short discussion of fidelity is given to prove the success of the operations in implementing these gates. (paper)

  16. Quantum Gate Operations in Decoherence-Free Subspace with Superconducting Charge Qubits inside a Cavity

    International Nuclear Information System (INIS)

    Yi-Min, Wang; Yan-Li, Zhou; Lin-Mei, Liang; Cheng-Zu, Li

    2009-01-01

    We propose a feasible scheme to achieve universal quantum gate operations in decoherence-free subspace with superconducting charge qubits placed in a microwave cavity. Single-logic-qubit gates can be realized with cavity assisted interaction, which possesses the advantages of unconventional geometric gate operation. The two-logic-qubit controlled-phase gate between subsystems can be constructed with the help of a variable electrostatic transformer. The collective decoherence can be successfully avoided in our well-designed system. Moreover, GHZ state for logical qubits can also be easily produced in this system

  17. Cluster computing software for GATE simulations

    International Nuclear Information System (INIS)

    Beenhouwer, Jan de; Staelens, Steven; Kruecker, Dirk; Ferrer, Ludovic; D'Asseler, Yves; Lemahieu, Ignace; Rannou, Fernando R.

    2007-01-01

    Geometry and tracking (GEANT4) is a Monte Carlo package designed for high energy physics experiments. It is used as the basis layer for Monte Carlo simulations of nuclear medicine acquisition systems in GEANT4 Application for Tomographic Emission (GATE). GATE allows the user to realistically model experiments using accurate physics models and time synchronization for detector movement through a script language contained in a macro file. The downside of this high accuracy is long computation time. This paper describes a platform independent computing approach for running GATE simulations on a cluster of computers in order to reduce the overall simulation time. Our software automatically creates fully resolved, nonparametrized macros accompanied with an on-the-fly generated cluster specific submit file used to launch the simulations. The scalability of GATE simulations on a cluster is investigated for two imaging modalities, positron emission tomography (PET) and single photon emission computed tomography (SPECT). Due to a higher sensitivity, PET simulations are characterized by relatively high data output rates that create rather large output files. SPECT simulations, on the other hand, have lower data output rates but require a long collimator setup time. Both of these characteristics hamper scalability as a function of the number of CPUs. The scalability of PET simulations is improved here by the development of a fast output merger. The scalability of SPECT simulations is improved by greatly reducing the collimator setup time. Accordingly, these two new developments result in higher scalability for both PET and SPECT simulations and reduce the computation time to more practical values

  18. Patient training in respiratory-gated radiotherapy

    International Nuclear Information System (INIS)

    Kini, Vijay R.; Vedam, Subrahmanya S.; Keall, Paul J.; Patil, Sumukh; Chen, Clayton; Mohan, Radhe

    2003-01-01

    Respiratory gating is used to counter the effects of organ motion during radiotherapy for chest tumors. The effects of variations in patient breathing patterns during a single treatment and from day to day are unknown. We evaluated the feasibility of using patient training tools and their effect on the breathing cycle regularity and reproducibility during respiratory-gated radiotherapy. To monitor respiratory patterns, we used a component of a commercially available respiratory-gated radiotherapy system (Real Time Position Management (RPM) System, Varian Oncology Systems, Palo Alto, CA 94304). This passive marker video tracking system consists of reflective markers placed on the patient's chest or abdomen, which are detected by a wall-mounted video camera. Software installed on a PC interfaced to this camera detects the marker motion digitally and records it. The marker position as a function of time serves as the motion signal that may be used to trigger imaging or treatment. The training tools used were audio prompting and visual feedback, with free breathing as a control. The audio prompting method used instructions to 'breathe in' or 'breathe out' at periodic intervals deduced from patients' own breathing patterns. In the visual feedback method, patients were shown a real-time trace of their abdominal wall motion due to breathing. Using this, they were asked to maintain a constant amplitude of motion. Motion traces of the abdominal wall were recorded for each patient for various maneuvers. Free breathing showed a variable amplitude and frequency. Audio prompting resulted in a reproducible frequency; however, the variability and the magnitude of amplitude increased. Visual feedback gave a better control over the amplitude but showed minor variations in frequency. We concluded that training improves the reproducibility of amplitude and frequency of patient breathing cycles. This may increase the accuracy of respiratory-gated radiation therapy

  19. A versatile single molecular precursor for the synthesis of layered oxide cathode materials for Li-ion batteries.

    Science.gov (United States)

    Li, Maofan; Liu, Jiajie; Liu, Tongchao; Zhang, Mingjian; Pan, Feng

    2018-02-01

    A carbonyl-bridged single molecular precursor LiTM(acac) 3 [transition metal (TM) = cobalt/manganese/nickel (Co/Mn/Ni), acac = acetylacetone], featuring a one-dimensional chain structure, was designed and applied to achieve the layered oxide cathode materials: LiTMO 2 (TM = Ni/Mn/Co, NMC). As examples, layered oxides, primary LiCoO 2 , binary LiNi 0.8 Co 0.2 O 2 and ternary LiNi 0.5 Mn 0.3 Co 0.2 O 2 were successfully prepared to be used as cathode materials. When they are applied to lithium-ion batteries (LIBs), all exhibit good electrochemical performance because of their unique morphology and great uniformity of element distribution. This versatile precursor is predicted to accommodate many other metal cations, such as aluminum (Al 3+ ), iron (Fe 2+ ), and sodium (Na + ), because of the flexibility of organic ligand, which not only facilitates the doping-modification of the NMC system, but also enables synthesis of Na-ion layered oxides. This opens a new direction of research for the synthesis of high-performance layered oxide cathode materials for LIBs.

  20. Mitigation of Critical Single Point Failure (SPF) Material - Laminac 4116 Binder Replacement Program for Parachute and Cluster Stars Illuminant Compositions for Hand Held Signals

    National Research Council Canada - National Science Library

    Lakshminarayanan, G. R; Chen, Gary; Ames, Richard; Lee, Wai T; Wejsa, James L

    2006-01-01

    Laminac 4116 binder has been identified as a single point failure (SPF) material since it is being produced by only one company and there is a possibility that the company may discontinue production due to low product demand...

  1. Dosimetric Analysis of Respiratory-Gated Radiotherapy for Hepatocellular Carcinoma

    International Nuclear Information System (INIS)

    Xi Mian; Zhang Li; Liu Mengzhong; Deng Xiaowu; Huang Xiaoyan; Liu Hui

    2011-01-01

    The purpose of this study was to define individualized internal target volume (ITV) for hepatocellular carcinoma (HCC) using 4D computed tomography (4DCT), and to determine the geometric and dosimetric benefits of respiratory gating. Gross tumor volumes (GTVs) were contoured on 10 respiratory phases of 4DCT images for 12 patients with HCC. Three treatment plans were prepared using different planning target volumes (PTVs): (1) PTV 3D , derived from a single helical clinical target volume (CTV) plus conventional margins; (2) PTV 10phases , derived from ITV 10phases , which encompassed all 10 CTVs plus an isotropic margin of 0.8 cm; (3) PTV gating , derived from ITV gating , which encompassed three CTVs within gating-window at end-expiration plus an isotropic margin of 0.8 cm. The PTV 3D was the largest volume for all patients. The ITV-based plans and gating plans spared more normal tissues than 3D plans, especially the liver. Without increasing normal tissue complication probability of the 3D plans, the ITV-based plans allowed for increasing the calculated dose from 50.8 Gy to 54.7 Gy on average, and the gating plans could further escalate the dose to 58.5 Gy. Compared with ITV-based plans, the dosimetric gains with gating plan strongly correlated with GTV mobility in the craniocaudal direction. The ITV-based plans can ensure target coverage with less irradiation of normal tissues compared with 3D plans. Respiratory-gated radiotherapy can further reduce the target volumes to spare more surrounding tissues and allow dose escalation, especially for patients with tumor mobility >1 cm.

  2. The role of prosthetic abutment material on the stress distribution in a maxillary single implant-supported fixed prosthesis

    Energy Technology Data Exchange (ETDEWEB)

    Peixoto, Hugo Eduardo, E-mail: hugo.e.peixoto@hotmail.com [Implantology Team, Latin American Institute of Research and Education in Dentistry, Curitiba, Paraná (Brazil); Bordin, Dimorvan, E-mail: dimorvan_bordin@hotmail.com [Department of Prosthodontics and Periodontology, Piracicaba Dental School, State University of Campinas, Limeira avenue, 901-Vila Rezende, Piracicaba, SP 13414-903 (Brazil); Del Bel Cury, Altair A., E-mail: altcury@fop.unicamp.br [Department of Prosthodontics and Periodontology, Piracicaba Dental School, State University of Campinas, Limeira avenue, 901-Vila Rezende, Piracicaba, SP 13414-903 (Brazil); Silva, Wander José da, E-mail: wanderjose@fop.unicamp.br [Department of Prosthodontics and Periodontology, Piracicaba Dental School, State University of Campinas, Limeira avenue, 901-Vila Rezende, Piracicaba, SP 13414-903 (Brazil); Faot, Fernanda, E-mail: fernanda.faot@gmail.com [Department of Restorative Dentistry, School of Dentistry, Federal University of Pelotas, Gonçalves Chaves, 457, 2nd floor, Pelotas, Rio Grande do Sul 96015-560 (Brazil)

    2016-08-01

    Purpose: Evaluate the influence of abutment's material and geometry on stress distribution in a single implant-supported prosthesis. Materials and Methods: Three-dimensional models were made based on tomographic slices of the upper middle incisor area, in which a morse taper implant was positioned and a titanium (Ti) or zirconia (ZrN) universal abutments was installed. The commercially available geometry of titanium (T) and zirconia (Z) abutments were used to draw two models, TM1 and ZM1 respectively, which served as control groups. These models were compared with 2 experimental groups were the mechanical properties of Z were applied to the titanium abutment (TM2) and vice versa for the zirconia abutment (ZM2). Subsequently, loading was simulated in two steps, starting with a preload phase, calculated with the respective friction coefficients of each materials, followed by a combined preload and chewing force. The maximum von Mises stress was described. Data were analyzed by two-way ANOVA that considered material composition, geometry and loading (p < 0.05). Results: Titanium and zirconia abutments showed similar von Mises stresses in the mechanical part of the four models. The area with the highest concentration of stress was the screw thread, following by the screw body. The highest stress levels occurred in screw thread was observed during the preloading phase in the ZM1 model (931 MPa); and during the combined loading in the TM1 model (965 MPa). Statistically significant differences were observed for loading, the material × loading interaction, and the loading × geometry interaction (p < 0.05). Preloading contributed for 77.89% of the stress (p < 0.05). There were no statistically significant differences to the other factors (p > 0.05). Conclusion: The screw was the piece most intensely affected, mainly through the preload force, independent of the abutment's material. - Highlights: • The abutment's screw was the most impaired piece of the

  3. Generic two-qubit photonic gates implemented by number-resolving photodetection

    International Nuclear Information System (INIS)

    Uskov, Dmitry B.; Smith, A. Matthew; Kaplan, Lev

    2010-01-01

    We combine numerical optimization techniques [Uskov et al., Phys. Rev. A 79, 042326 (2009)] with symmetries of the Weyl chamber to obtain optimal implementations of generic linear-optical Knill-Laflamme-Milburn-type two-qubit entangling gates. We find that while any two-qubit controlled-U gate, including controlled-NOT (CNOT) and controlled-sign gates, can be implemented using only two ancilla resources with a success probability S>0.05, a generic SU(4) operation requires three unentangled ancilla photons, with success S>0.0063. Specifically, we obtain a maximal success probability close to 0.0072 for the B gate. We show that single-shot implementation of a generic SU(4) gate offers more than an order of magnitude increase in the success probability and a two-fold reduction in overhead ancilla resources compared to standard triple-CNOT and double-B gate decompositions.

  4. Gating of human ClC-2 chloride channels and regulation by carboxy-terminal domains.

    Science.gov (United States)

    Garcia-Olivares, Jennie; Alekov, Alexi; Boroumand, Mohammad Reza; Begemann, Birgit; Hidalgo, Patricia; Fahlke, Christoph

    2008-11-15

    Eukaryotic ClC channels are dimeric proteins with each subunit forming an individual protopore. Single protopores are gated by a fast gate, whereas the slow gate is assumed to control both protopores through a cooperative movement of the two carboxy-terminal domains. We here study the role of the carboxy-terminal domain in modulating fast and slow gating of human ClC-2 channels, a ubiquitously expressed ClC-type chloride channel involved in transepithelial solute transport and in neuronal chloride homeostasis. Partial truncation of the carboxy-terminus abolishes function of ClC-2 by locking the channel in a closed position. However, unlike other isoforms, its complete removal preserves function of ClC-2. ClC-2 channels without the carboxy-terminus exhibit fast and slow gates that activate and deactivate significantly faster than in WT channels. In contrast to the prevalent view, a single carboxy-terminus suffices for normal slow gating, whereas both domains regulate fast gating of individual protopores. Our findings demonstrate that the carboxy-terminus is not strictly required for slow gating and that the cooperative gating resides in other regions of the channel protein. ClC-2 is expressed in neurons and believed to open at negative potentials and increased internal chloride concentrations after intense synaptic activity. We propose that the function of the ClC-2 carboxy-terminus is to slow down the time course of channel activation in order to stabilize neuronal excitability.

  5. Photon-gated spin transistor

    OpenAIRE

    Li, Fan; Song, Cheng; Cui, Bin; Peng, Jingjing; Gu, Youdi; Wang, Guangyue; Pan, Feng

    2017-01-01

    Spin-polarized field-effect transistor (spin-FET), where a dielectric layer is generally employed for the electrical gating as the traditional FET, stands out as a seminal spintronic device under the miniaturization trend of electronics. It would be fundamentally transformative if optical gating was used for spin-FET. We report a new type of spin-polarized field-effect transistor (spin-FET) with optical gating, which is fabricated by partial exposure of the (La,Sr)MnO3 channel to light-emitti...

  6. Gated Treatment Delivery Verification With On-Line Megavoltage Fluoroscopy

    International Nuclear Information System (INIS)

    Tai An; Christensen, James D.; Gore, Elizabeth; Khamene, Ali; Boettger, Thomas; Li, X. Allen

    2010-01-01

    Purpose: To develop and clinically demonstrate the use of on-line real-time megavoltage (MV) fluoroscopy for gated treatment delivery verification. Methods and Materials: Megavoltage fluoroscopy (MVF) image sequences were acquired using a flat panel equipped for MV cone-beam CT in synchrony with the respiratory signal obtained from the Anzai gating device. The MVF images can be obtained immediately before or during gated treatment delivery. A prototype software tool (named RTReg4D) was developed to register MVF images with phase-sequenced digitally reconstructed radiograph images generated from the treatment planning system based on four-dimensional CT. The image registration can be used to reposition the patient before or during treatment delivery. To demonstrate the reliability and clinical usefulness, the system was first tested using a thoracic phantom and then prospectively in actual patient treatments under an institutional review board-approved protocol. Results: The quality of the MVF images for lung tumors is adequate for image registration with phase-sequenced digitally reconstructed radiographs. The MVF was found to be useful for monitoring inter- and intrafractional variations of tumor positions. With the planning target volume contour displayed on the MVF images, the system can verify whether the moving target stays within the planning target volume margin during gated delivery. Conclusions: The use of MVF images was found to be clinically effective in detecting discrepancies in tumor location before and during respiration-gated treatment delivery. The tools and process developed can be useful for gated treatment delivery verification.

  7. Audio-visual biofeedback for respiratory-gated radiotherapy: Impact of audio instruction and audio-visual biofeedback on respiratory-gated radiotherapy

    International Nuclear Information System (INIS)

    George, Rohini; Chung, Theodore D.; Vedam, Sastry S.; Ramakrishnan, Viswanathan; Mohan, Radhe; Weiss, Elisabeth; Keall, Paul J.

    2006-01-01

    Purpose: Respiratory gating is a commercially available technology for reducing the deleterious effects of motion during imaging and treatment. The efficacy of gating is dependent on the reproducibility within and between respiratory cycles during imaging and treatment. The aim of this study was to determine whether audio-visual biofeedback can improve respiratory reproducibility by decreasing residual motion and therefore increasing the accuracy of gated radiotherapy. Methods and Materials: A total of 331 respiratory traces were collected from 24 lung cancer patients. The protocol consisted of five breathing training sessions spaced about a week apart. Within each session the patients initially breathed without any instruction (free breathing), with audio instructions and with audio-visual biofeedback. Residual motion was quantified by the standard deviation of the respiratory signal within the gating window. Results: Audio-visual biofeedback significantly reduced residual motion compared with free breathing and audio instruction. Displacement-based gating has lower residual motion than phase-based gating. Little reduction in residual motion was found for duty cycles less than 30%; for duty cycles above 50% there was a sharp increase in residual motion. Conclusions: The efficiency and reproducibility of gating can be improved by: incorporating audio-visual biofeedback, using a 30-50% duty cycle, gating during exhalation, and using displacement-based gating

  8. Single Electron Tunneling

    International Nuclear Information System (INIS)

    Ruggiero, Steven T.

    2005-01-01

    Financial support for this project has led to advances in the science of single-electron phenomena. Our group reported the first observation of the so-called ''Coulomb Staircase'', which was produced by tunneling into ultra-small metal particles. This work showed well-defined tunneling voltage steps of width e/C and height e/RC, demonstrating tunneling quantized on the single-electron level. This work was published in a now well-cited Physical Review Letter. Single-electron physics is now a major sub-field of condensed-matter physics, and fundamental work in the area continues to be conducted by tunneling in ultra-small metal particles. In addition, there are now single-electron transistors that add a controlling gate to modulate the charge on ultra-small photolithographically defined capacitive elements. Single-electron transistors are now at the heart of at least one experimental quantum-computer element, and single-electron transistor pumps may soon be used to define fundamental quantities such as the farad (capacitance) and the ampere (current). Novel computer technology based on single-electron quantum dots is also being developed. In related work, our group played the leading role in the explanation of experimental results observed during the initial phases of tunneling experiments with the high-temperature superconductors. When so-called ''multiple-gap'' tunneling was reported, the phenomenon was correctly identified by our group as single-electron tunneling in small grains in the material. The main focus throughout this project has been to explore single electron phenomena both in traditional tunneling formats of the type metal/insulator/particles/insulator/metal and using scanning tunneling microscopy to probe few-particle systems. This has been done under varying conditions of temperature, applied magnetic field, and with different materials systems. These have included metals, semi-metals, and superconductors. Amongst a number of results, we have

  9. Angle resolved photoemission study of Fermi surfaces and single-particle excitations of quasi-low dimensional materials

    Science.gov (United States)

    Gweon, Gey-Hong

    Using angle resolved photoemission spectroscopy (ARPES) as the main experimental tool and the single particle Green's function as the main theoretical tool, materials of various degrees of low dimensionality and different ground states are studied. The underlying theme of this thesis is that of one dimensional physics, which includes charge density waves (CDW's) and the Luttinger liquid (LL). The LL is the prime example of a lattice non-Fermi liquid (non-FL) and CDW fluctuations also give non-FL behaviors. Non-FL physics is an emerging paradigm of condensed matter physics. It is thought by some researchers that one dimensional LL behavior is a key element in solving the high temperature superconductivity problem. TiTe2 is a quasi-2 dimensional (quasi-2D) Fermi liquid (FL) material very well suited for ARPES lineshape studies. I report ARPES spectra at 300 K which show an unusual behavior of a peak moving through the Fermi energy (EF). I also report a good fit of the ARPES spectra at 25 K obtained by using a causal Green's function proposed by K. Matho. SmTe3 is a quasi-2D CDW material. The near EF ARPES spectra and intensity map reveal rich details of an anisotropic gap and imperfectly nested Fermi surface (FS) for a high temperature CDW. A simple model of imperfect nesting can be constructed from these data and predicts a CDW wavevector in very good agreement with the value known from electron diffraction. NaMo6O17 and KMo 6O17 are also quasi-2D CDW materials. The "hidden nesting" or "hidden 1 dimensionality" picture for the CDW is confirmed very well by our direct image of the FS. K0.3MoO3, the so-called "blue bronze," is a quasi-1 dimensional (quasi-1D) CDW material. Even in its metallic phase above the CDW transition temperature, its photoemission spectra show an anomalously weak intensity at EF and no clear metallic Fermi edge. I compare predictions of an LL model and a CDW fluctuation model regarding these aspects, and find that the LL scenario explains them

  10. Reversible logic gates on Physarum Polycephalum

    International Nuclear Information System (INIS)

    Schumann, Andrew

    2015-01-01

    In this paper, we consider possibilities how to implement asynchronous sequential logic gates and quantum-style reversible logic gates on Physarum polycephalum motions. We show that in asynchronous sequential logic gates we can erase information because of uncertainty in the direction of plasmodium propagation. Therefore quantum-style reversible logic gates are more preferable for designing logic circuits on Physarum polycephalum

  11. Demonstration of a Quantum Nondemolition Sum Gate

    DEFF Research Database (Denmark)

    Yoshikawa, J.; Miwa, Y.; Huck, Alexander

    2008-01-01

    The sum gate is the canonical two-mode gate for universal quantum computation based on continuous quantum variables. It represents the natural analogue to a qubit C-NOT gate. In addition, the continuous-variable gate describes a quantum nondemolition (QND) interaction between the quadrature...

  12. Extension of a data-driven gating technique to 3D, whole body PET studies

    International Nuclear Information System (INIS)

    Schleyer, Paul J; O'Doherty, Michael J; Marsden, Paul K

    2011-01-01

    Respiratory gating can be used to separate a PET acquisition into a series of near motion-free bins. This is typically done using additional gating hardware; however, software-based methods can derive the respiratory signal from the acquired data itself. The aim of this work was to extend a data-driven respiratory gating method to acquire gated, 3D, whole body PET images of clinical patients. The existing method, previously demonstrated with 2D, single bed-position data, uses a spectral analysis to find regions in raw PET data which are subject to respiratory motion. The change in counts over time within these regions is then used to estimate the respiratory signal of the patient. In this work, the gating method was adapted to only accept lines of response from a reduced set of axial angles, and the respiratory frequency derived from the lung bed position was used to help identify the respiratory frequency in all other bed positions. As the respiratory signal does not identify the direction of motion, a registration-based technique was developed to align the direction for all bed positions. Data from 11 clinical FDG PET patients were acquired, and an optical respiratory monitor was used to provide a hardware-based signal for comparison. All data were gated using both the data-driven and hardware methods, and reconstructed. The centre of mass of manually defined regions on gated images was calculated, and the overall displacement was defined as the change in the centre of mass between the first and last gates. The mean displacement was 10.3 mm for the data-driven gated images and 9.1 mm for the hardware gated images. No significant difference was found between the two gating methods when comparing the displacement values. The adapted data-driven gating method was demonstrated to successfully produce respiratory gated, 3D, whole body, clinical PET acquisitions.

  13. A Prospective Cohort Study of Gated Stereotactic Liver Radiation Therapy Using Continuous Internal Electromagnetic Motion Monitoring

    DEFF Research Database (Denmark)

    Worm, Esben S; Høyer, Morten; Hansen, Rune

    2018-01-01

    PURPOSE: Intrafraction motion can compromise the treatment accuracy in liver stereotactic body radiation therapy (SBRT). Respiratory gating can improve treatment delivery; however, gating based on external motion surrogates is inaccurate. The present study reports the use of Calypso-based internal...... electromagnetic motion monitoring for gated liver SBRT. METHODS AND MATERIALS: Fifteen patients were included in a study of 3-fraction respiratory gated liver SBRT guided by 3 implanted electromagnetic transponders. The planning target volume was created by a 5-mm axial and 7-mm (n = 12) or 10-mm (n = 3...

  14. ZIF-8 gate tuning via terminal group modification: a computational study

    KAUST Repository

    Zheng, Bin

    2016-06-24

    Tuning the pore structure of zeolitic imidazolate frameworks (ZIFs) enables unique control of their material properties. In this work, we used computational methods to examine the gate structure of ZIF-8 tuned by substitution terminal groups. The substitution position and electron affinity of the added groups were shown to be key factors in gate size. Electrostatic interactions are responsible for the variation in gate opening. These results suggest that the post-modification of terminal group in ZIFs can be used to finely tune the pore gate, opening up new strategies in the design of ZIFs with desired properties.

  15. Wear resistance of thick diamond like carbon coatings against polymeric materials used in single screw plasticizing technology

    Science.gov (United States)

    Zitzenbacher, G.; Liu, K.; Forsich, C.; Heim, D.

    2015-05-01

    Wear on the screw and barrel surface accompany polymer single screw plasticizing technology from the beginning. In general, wear on screws can be reduced by using nitrided steel surfaces, fused armour alloys on the screw flights and coatings. However, DLC-coatings (Diamond Like Carbon) comprise a number of interesting properties such as a high hardness, a low coefficient of friction and an excellent corrosion resistance due to their amorphous structure. The wear resistance of about 50 µm thick DLC-coatings against polyamide 6.6, polybutylene terephthalate and polypropylene is investigated in this paper. The tribology in the solids conveying zone of a single screw extruder until the beginning of melting is evaluated using a pin on disc tribometer and a so called screw tribometer. The polymeric pins are pressed against coated metal samples using the pin on disc tribometer and the tests are carried out at a defined normal force and sliding velocity. The screw tribometer is used to perform tribological experiments between polymer pellets and rotating coated metal shafts simulating the extruder screw. Long term experiments were performed to evaluate the wear resistance of the DLC-coating. A reduction of the coefficient of friction can be observed after a frictional distance of about 20 kilometers using glass fibre reinforced polymeric materials. This reduction is independent on the polymer and accompanied by a black layer on the wear surface of the polymeric pins. The DLC-coated metal samples show an up to 16 µm deep wear track after the 100 kilometer test period against the glass fiber filled materials only.

  16. Materialism.

    Science.gov (United States)

    Melnyk, Andrew

    2012-05-01

    Materialism is nearly universally assumed by cognitive scientists. Intuitively, materialism says that a person's mental states are nothing over and above his or her material states, while dualism denies this. Philosophers have introduced concepts (e.g., realization and supervenience) to assist in formulating the theses of materialism and dualism with more precision, and distinguished among importantly different versions of each view (e.g., eliminative materialism, substance dualism, and emergentism). They have also clarified the logic of arguments that use empirical findings to support materialism. Finally, they have devised various objections to materialism, objections that therefore serve also as arguments for dualism. These objections typically center around two features of mental states that materialism has had trouble in accommodating. The first feature is intentionality, the property of representing, or being about, objects, properties, and states of affairs external to the mental states. The second feature is phenomenal consciousness, the property possessed by many mental states of there being something it is like for the subject of the mental state to be in that mental state. WIREs Cogn Sci 2012, 3:281-292. doi: 10.1002/wcs.1174 For further resources related to this article, please visit the WIREs website. Copyright © 2012 John Wiley & Sons, Ltd.

  17. Speed limits for quantum gates in multiqubit systems

    NARCIS (Netherlands)

    Ashhab, S.; De Groot, P.C.; Nori, F.

    2012-01-01

    We use analytical and numerical calculations to obtain speed limits for various unitary quantum operations in multiqubit systems under typical experimental conditions. The operations that we consider include single-, two-, and three-qubit gates, as well as quantum-state transfer in a chain of

  18. Tackling systematic errors in quantum logic gates with composite rotations

    International Nuclear Information System (INIS)

    Cummins, Holly K.; Llewellyn, Gavin; Jones, Jonathan A.

    2003-01-01

    We describe the use of composite rotations to combat systematic errors in single-qubit quantum logic gates and discuss three families of composite rotations which can be used to correct off-resonance and pulse length errors. Although developed and described within the context of nuclear magnetic resonance quantum computing, these sequences should be applicable to any implementation of quantum computation

  19. Tip-Enhanced Nano-Spectroscopy, Imaging, and Control: From Single Molecules to van der Waals Materials

    Science.gov (United States)

    Park, Kyoung-Duck

    Photon-induced phenomena in molecules and other materials play a significant role in device applications as well as understanding their physical properties. While a range of device applications using organic and inorganic molecules and soft and hard materials have led striking developments in modern technologies, using bulk systems has reached the limit in their functions, performance, and regarding application range. Recently, low-dimensional systems have emerged as appealing resources for the advanced technologies based on their significantly improved functions and properties. Hence, understanding light-matter interactions at their natural length scale is of fundamental significance, in addition to the next generation device applications. This thesis demonstrates a range of new functions and behaviors of low-dimensional materials revealed and controlled by the advanced tip-enhanced near-field spectroscopy and imaging techniques exceeding the current instrumental limits. To understand the behaviors of zero-dimensional (0D) molecular systems in interacting environments, we explore new regimes in tip-enhanced Raman spectroscopy (TERS) and scanning near-field optical microscopy (SNOM), revealing the fundamental nature of single-molecule dynamics and nanoscale spatial heterogeneity of biomolecules on the cell membranes. To gain insight into intramolecular properties and dynamic processes of single molecules, we use TERS at cryogenic temperatures. From temperature-dependent line narrowing and splitting, we investigate and quantify ultrafast vibrational dephasing, intramolecular coupling, and conformational heterogeneity. Through correlation analysis of fluctuations of individual modes, we observe rotational motion and spectral fluctuations of single-molecule. We extend single-molecule spectroscopy study into in situ nano-biomolecular imaging of cancer cells by developing in-liquid SNOM. We use a new mechanical resonance control, achieving a high-Q force sensing of the

  20. Investigation of the particle size distribution of the ejected material generated during the single femtosecond laser pulse ablation of aluminium

    International Nuclear Information System (INIS)

    Wu, Han; Zhang, Nan; Zhu, Xiaonong

    2014-01-01

    Highlights: • Single 50 fs laser pulse ablation of an aluminium target in vacuum is investigated in our experiments. • Nanoparticles with large radii of several hundred nanometers are observed. • The nanoparticles are most likely from the mechanical tensile stress relaxation. - Abstract: Single femtosecond laser pulses are employed to ablate an aluminium target in vacuum, and the particle size distribution of the ablated material deposited on a mica substrate is examined with atomic force microscopy (AFM). The recorded AFM images show that these particles have a mean radius of several tens of nanometres. It is also determined that the mean radius of these deposited nanoparticles increases when the laser fluence at the aluminium target increases from 0.44 J/cm 2 to 0.63 J/cm 2 . The mechanism of the laser-induced nanoparticle generation is thought to be photomechanical tensile stress relaxation. Raman spectroscopy measurements confirm that the nanoparticles thus produced have the same structure as the bulk aluminium

  1. Deep Gate Recurrent Neural Network

    Science.gov (United States)

    2016-11-22

    and Fred Cummins. Learning to forget: Continual prediction with lstm . Neural computation, 12(10):2451–2471, 2000. Alex Graves. Generating sequences...DSGU) and Simple Gated Unit (SGU), which are structures for learning long-term dependencies. Compared to traditional Long Short-Term Memory ( LSTM ) and...Gated Recurrent Unit (GRU), both structures require fewer parameters and less computation time in sequence classification tasks. Unlike GRU and LSTM

  2. Bill Gates vil redde Folkeskolen

    DEFF Research Database (Denmark)

    Fejerskov, Adam Moe

    2014-01-01

    Det amerikanske uddannelsessystem bliver for tiden udsat for hård kritik, ledt an af Microsoft stifteren Bill Gates. Gates har indtil videre brugt 3 mia. kroner på at skabe opbakning til tiltag som præstationslønning af lærere og strømlining af pensum på tværs af alle skoler i landet...

  3. Characterization of the solid, airborne materials created when UF6 reacts with moist air flowing in single-pass mode

    International Nuclear Information System (INIS)

    Pickrell, P.W.

    1985-10-01

    A series of experiments has been performed in which UF 6 was released into flowing air in order to characterize the solid particulate material produced under non-static conditions. In two of the experiments, the aerosol was allowed to stagnate in a static chamber after release and examined further but in the other experiments characterization was done only on material collected a few seconds after release. Transmission electron microscopy and mass measurement by cascaded impactor were used to characterize the aerosol particles which were usually single spheroids with little agglomeration in evidence. The goal of the work is to determine the chemistry and physics of the UF 6 -atmospheric moisture reaction under a variety of conditions so that information about resulting species and product morphologies is available for containment and removal (knockdown) studies as well as for dispersion plume modeling and toxicology studies. This report completes the milestone for reporting the information obtained from releases of UF 6 into flowing rather than static air. 26 figs., 3 tabs

  4. Single-crystal-material-based induced-shear actuation for vibration reduction of helicopters with composite rotor system

    International Nuclear Information System (INIS)

    Pawar, Prashant M; Jung, Sung Nam

    2008-01-01

    In this study, an assessment is made for the helicopter vibration reduction of composite rotor blades using an active twist control concept. Special focus is given to the feasibility of implementing the benefits of the shear actuation mechanism along with elastic couplings of composite blades for achieving maximum vibration reduction. The governing equations of motion for composite rotor blades with surface bonded piezoceramic actuators are obtained using Hamilton's principle. The equations are then solved for dynamic response using finite element discretization in the spatial and time domains. A time domain unsteady aerodynamic theory with free wake model is used to obtain the airloads. A newly developed single-crystal piezoceramic material is introduced as an actuator material to exploit its superior shear actuation authority. Seven rotor blades with different elastic couplings representing stiffness properties similar to stiff-in-plane rotor blades are used to investigate the hub vibration characteristics. The rotor blades are modeled as a box beam with actuator layers bonded on the outer surface of the top and bottom of the box section. Numerical results show that a notable vibration reduction can be achieved for all the combinations of composite rotor blades. This investigation also brings out the effect of different elastic couplings on various vibration-reduction-related parameters which could be useful for the optimal design of composite helicopter blades

  5. Single-crystal-material-based induced-shear actuation for vibration reduction of helicopters with composite rotor system

    Science.gov (United States)

    Pawar, Prashant M.; Jung, Sung Nam

    2008-12-01

    In this study, an assessment is made for the helicopter vibration reduction of composite rotor blades using an active twist control concept. Special focus is given to the feasibility of implementing the benefits of the shear actuation mechanism along with elastic couplings of composite blades for achieving maximum vibration reduction. The governing equations of motion for composite rotor blades with surface bonded piezoceramic actuators are obtained using Hamilton's principle. The equations are then solved for dynamic response using finite element discretization in the spatial and time domains. A time domain unsteady aerodynamic theory with free wake model is used to obtain the airloads. A newly developed single-crystal piezoceramic material is introduced as an actuator material to exploit its superior shear actuation authority. Seven rotor blades with different elastic couplings representing stiffness properties similar to stiff-in-plane rotor blades are used to investigate the hub vibration characteristics. The rotor blades are modeled as a box beam with actuator layers bonded on the outer surface of the top and bottom of the box section. Numerical results show that a notable vibration reduction can be achieved for all the combinations of composite rotor blades. This investigation also brings out the effect of different elastic couplings on various vibration-reduction-related parameters which could be useful for the optimal design of composite helicopter blades.

  6. Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

    Science.gov (United States)

    Hepp, Aloysius F.; Banger, Kulbinder K.; Jin, Michael H.-C.; Harris, Jerry D.; McNatt, Jeremiah S.; Dickman, John E.

    2008-01-01

    Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

  7. Assessment of a quantum phase-gate operation based on nonlinear optics

    International Nuclear Information System (INIS)

    Rebic, S.; Ottaviani, C.; Di Giuseppe, G.; Vitali, D.; Tombesi, P.

    2006-01-01

    We analyze in detail the proposal for a two-qubit gate for travelling single-photon qubits recently presented by Ottaviani et al. [Phys. Rev. A 73, 010301(R) (2006)]. The scheme is based on an ensemble of five-level atoms coupled to two quantum and two classical light fields. The two quantum fields undergo cross-phase modulation induced by electromagnetically induced transparency. The performance of this two-qubit quantum phase gate for travelling single-photon qubits is thoroughly examined in the steady-state and transient regimes, by means of a full quantum treatment of the system dynamics. In the steady-state regime, we find a general trade-off between the size of the conditional phase shift and the fidelity of the gate operation. However, this trade-off can be bypassed in the transient regime, where a satisfactory gate operation is found to be possible, significantly reducing the gate operation time

  8. Latest design of gate valves

    Energy Technology Data Exchange (ETDEWEB)

    Kurzhofer, U.; Stolte, J.; Weyand, M.

    1996-12-01

    Babcock Sempell, one of the most important valve manufacturers in Europe, has delivered valves for the nuclear power industry since the beginning of the peaceful application of nuclear power in the 1960s. The latest innovation by Babcock Sempell is a gate valve that meets all recent technical requirements of the nuclear power technology. At the moment in the United States, Germany, Sweden, and many other countries, motor-operated gate and globe valves are judged very critically. Besides the absolute control of the so-called {open_quotes}trip failure,{close_quotes} the integrity of all valve parts submitted to operational forces must be maintained. In case of failure of the limit and torque switches, all valve designs have been tested with respect to the quality of guidance of the gate. The guidances (i.e., guides) shall avoid a tilting of the gate during the closing procedure. The gate valve newly designed by Babcock Sempell fulfills all these characteristic criteria. In addition, the valve has cobalt-free seat hardfacing, the suitability of which has been proven by friction tests as well as full-scale blowdown tests at the GAP of Siemens in Karlstein, West Germany. Babcock Sempell was to deliver more than 30 gate valves of this type for 5 Swedish nuclear power stations by autumn 1995. In the presentation, the author will report on the testing performed, qualifications, and sizing criteria which led to the new technical design.

  9. CMOS gate array characterization procedures

    Science.gov (United States)

    Spratt, James P.

    1993-09-01

    Present procedures are inadequate for characterizing the radiation hardness of gate array product lines prior to personalization because the selection of circuits to be used, from among all those available in the manufacturer's circuit library, is usually uncontrolled. (Some circuits are fundamentally more radiation resistant than others.) In such cases, differences in hardness can result between different designs of the same logic function. Hardness also varies because many gate arrays feature large custom-designed megacells (e.g., microprocessors and random access memories-MicroP's and RAM's). As a result, different product lines cannot be compared equally. A characterization strategy is needed, along with standardized test vehicle(s), methodology, and conditions, so that users can make informed judgments on which gate arrays are best suited for their needs. The program described developed preferred procedures for the radiation characterization of gate arrays, including a gate array evaluation test vehicle, featuring a canary circuit, designed to define the speed versus hardness envelope of the gate array. A multiplier was chosen for this role, and a baseline multiplier architecture is suggested that could be incorporated into an existing standard evaluation circuit chip.

  10. Ultra-Low Power Consuming Direct Radiation Sensors Based on Floating Gate Structures

    Directory of Open Access Journals (Sweden)

    Evgeny Pikhay

    2017-07-01

    Full Text Available In this paper, we report on ultra-low power consuming single poly floating gate direct radiation sensors. The developed devices are intended for total ionizing dose (TID measurements and fabricated in a standard CMOS process flow. Sensor design and operation is discussed in detail. Original array sensors were suggested and fabricated that allowed high statistical significance of the radiation measurements and radiation imaging functions. Single sensors and array sensors were analyzed in combination with the specially developed test structures. This allowed insight into the physics of sensor operations and exclusion of the phenomena related to material degradation under irradiation in the interpretation of the measurement results. Response of the developed sensors to various sources of ionizing radiation (Gamma, X-ray, UV, energetic ions was investigated. The optimal design of sensor for implementation in dosimetry systems was suggested. The roadmap for future improvement of sensor performance is suggested.

  11. Influence of the effectiveness of raw materials on the reliability of thermoelectric cooling devices. Part I: single-stage TEDs

    Directory of Open Access Journals (Sweden)

    Zaikov V. P.

    2015-02-01

    Full Text Available Increase of the reliability of information systems depends on the reliability improvement of their component elements, including cooling devices, providing efficiency of thermally loaded components. Thermoelectric devices based on the Peltier effect have significant advantages compared with air and liquid systems for thermal modes of the radio-electronic equipment. This happens due to the absence of moving parts, which account for the failure rate. The article presents research results on how thermoelectric efficiency modules affect the failure rate and the probability of non-failure operation in the range of working temperature of thermoelectric coolers. The authors investigate a model of relative failure rate and the probability of failure-free operation single-stage thermoelectric devices depending on the main relevant parameters: the operating current flowing through the thermocouple and resistance, temperature changes, the magnitude of the heat load and the number of elements in the module. It is shown that the increase in the thermoelectric efficiency of the primary material for a variety of thermocouple temperature changes causes the following: maximum temperature difference increases by 18%; the number of elements in the module decreases; cooling coefficient increases; failure rate reduces and the probability of non-failure operation of thermoelectric cooling device increases. Material efficiency increase by 1% allows reducing failure rate by 2,6—4,3% in maximum refrigeration capacity mode and by 4,2—5,0% in minimal failure rate mode when temperature difference changes in the range of 40—60 K. Thus, the increase in the thermoelectric efficiency of initial materials of thermocouples can significantly reduce the failure rate and increase the probability of failure of thermoelectric coolers depending on the temperature difference and the current operating mode.

  12. The single-shot opto-digitizer

    International Nuclear Information System (INIS)

    Nail, M.; Gibert, Ph.

    2000-01-01

    Laser-plasma experiments need to measure signals provided either by X-ray, photonic or neutronic detector. The measurement should have 50 GHz bandwidth and up to several hundred of Giga-Hertz for sub picosecond plasmas. For this purpose, a 35 GHz single shot opto-digitizer (10 ps risetime) has been studied and built. The device is made up of a 50 ohms microstrip propagation line, periodically lined by 100 sampled gates. The propagation line is long enough to measure a 400 ps duration. The sampling rate is 250 Gsa/s (every 4 ps). The sampled gates are made with fast recombining photo-material and turn on by a subpicosecond laser pulse which is synchronized exactly with the analysed phenomena. Every gate is recording to a storing capacitor. After the recording, every capacitor charge is needed to built the signal that was displayed on the propagation line. The dynamic range of measurement is 47 for the entire device. The device can measure positive or negative signals from 1.5 to 70 Volts. To increase the bandwidth, two another kinds of opto-digitizer were studied: one is a buried stripline with 56 GHz band width, the other a 70 GHz coplanar transmission line. For the purpose of subpicosecond plasmas, a 30 coplanar waveguide opto-digitizer was studied. Characteristics are as followed: window of measurement 40 ps, sampling rate 1 ps, bandwidth 230 GHz. Finally, a bundle of optical fibers was used to propagate the laser beam on semiconductor gates. If the gates are lighted at the same time, i.e. if the optical fibers have the same length, we get a simultaneous addressing. By using different lengths of optical fibers, we can do a sequential addressing. So, the sampling rate becomes a combination of the distance between two adjacent sampled channels, and the difference in length of optical fibers. (author)

  13. Protected quantum computing: interleaving gate operations with dynamical decoupling sequences.

    Science.gov (United States)

    Zhang, Jingfu; Souza, Alexandre M; Brandao, Frederico Dias; Suter, Dieter

    2014-02-07

    Implementing precise operations on quantum systems is one of the biggest challenges for building quantum devices in a noisy environment. Dynamical decoupling attenuates the destructive effect of the environmental noise, but so far, it has been used primarily in the context of quantum memories. Here, we experimentally demonstrate a general scheme for combining dynamical decoupling with quantum logical gate operations using the example of an electron-spin qubit of a single nitrogen-vacancy center in diamond. We achieve process fidelities >98% for gate times that are 2 orders of magnitude longer than the unprotected dephasing time T2.

  14. Design and Optimization of 22 nm Gate Length High-k/Metal gate NMOS Transistor

    International Nuclear Information System (INIS)

    Afifah Maheran A H; Menon P S; Shaari, S; Elgomati, H A; Salehuddin, F; Ahmad, I

    2013-01-01

    In this paper, we invented the optimization experiment design of a 22 nm gate length NMOS device which uses a combination of high-k material and metal as the gate which was numerically developed using an industrial-based simulator. The high-k material is Titanium dioxide (TiO 2 ), while the metal gate is Tungsten Silicide (WSi x ). The design is optimized using the L9 Taguchi method to get the optimum parameter design. There are four process parameters and two noise parameters which were varied for analyzing the effect on the threshold voltage (V th ). The objective of this experiment is to minimize the variance of V th where Taguchi's nominal-the-best signal-to-noise ratio (S/N Ratio) was used. The best settings of the process parameters were determined using Analysis of Mean (ANOM) and analysis of variance (ANOVA) to reduce the variability of V th . The results show that the V th values have least variance and the mean value can be adjusted to 0.306V ±0.027 for the NMOS device which is in line with projections by the ITRS specifications.

  15. Burnout and gate rupture of power MOS transistors with fission fragments of 252Cf

    International Nuclear Information System (INIS)

    Tang Benqi; Wang Yanping; Geng Bin; Chen Xiaohua; He Chaohui; Yang Hailiang

    2000-01-01

    A study to determine the single event burnout (SEB) and single event gate rupture (SEGR) sensitivities of power MOSFET devices is carried out by exposure to fission fragments from 252 Cf source. The test method, test results, a description of observed burnout current waveforms and a discussion of a possible failure mechanism are presented. The test results include the observed dependence upon applied drain or gate to source bias and effect of external capacitors and limited resistors

  16. Reduction of skin effect losses in double-level-T-gate structure

    Energy Technology Data Exchange (ETDEWEB)

    Mikulics, M., E-mail: m.mikulics@fz-juelich.de; Hardtdegen, H.; Arango, Y. C.; Adam, R.; Fox, A.; Grützmacher, D. [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich (Germany); Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, D-52425 Jülich (Germany); Gregušová, D.; Novák, J. [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava (Slovakia); Stanček, S. [Department of Nuclear Physic and Technique, Slovak University of Technology, SK-81219 Bratislava (Slovakia); Kordoš, P. [Institute of Electronics and Photonics, Slovak University of Technology, SK-81219 Bratislava (Slovakia); Sofer, Z. [Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, Prague 6 (Czech Republic); Juul, L.; Marso, M. [Faculté des Sciences, de la Technologie et de la Communication, Université du Luxembourg, L-1359 Luxembourg (Luxembourg)

    2014-12-08

    We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length L{sub g} = 200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 μm gate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of f{sub max} value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions.

  17. Impact of diabetes mellitus on worsening of the left ventricular ejection fraction in exercise-gated 201Tl myocardial single photon emission computed tomography in patients with coronary artery disease

    International Nuclear Information System (INIS)

    Yamagishi, Hiroyuki; Yoshiyama, Minoru; Shirai, Naoya; Akioka, Kaname; Takeuchi, Kazuhide; Yoshikawa, Junichi

    2003-01-01

    It remains uncertain whether factors other than the severity of coronary artery disease (CAD) are associated with the worsening of the left ventricular ejection fraction (LVEF) by exercise. In the present study the impact of coronary risk factors on the worsening of LVEF by exercise was investigated in 391 patients with known or suspected CAD using exercise-gated 201 Tl scanning to calculate the LVEF. Significant worsening of the LVEF by exercise was defined as >4.7% (mean plus 1 SD of the value in 116 patients without CAD). Multivariate analysis revealed that diabetes mellitus (DM) was an independent risk factor for the worsening of LVEF by exercise in patients with multivessel (2- or 3-vessel) CAD with an odds ratio (95% confidence interval) of 2.2 (1.1-4.5, p=0.037). In 157 patients with 2- or 3-vessel CAD, 20 (23.5%) of 85 nondiabetic patients and 31 (43.1%, p=0.009 vs nondiabetic patients) of 72 diabetic patients showed significant worsening of LVEF by exercise. In patients with 2- or 3-vessel CAD, there was no significant difference in Gensini score or reversibility of perfusion defects between nondiabetic and diabetic patients. Thus, DM is a risk factor for worsening LVEF by exercise in addition to the severity of CAD. (author)

  18. Quantitative analysis of cardiac function: Comparison of electrocardiogram dual gated single photon emission tomography, planar radionuclide ventriculogram and contrast ventriculography in the determination of LV volume and ejection fraction

    Energy Technology Data Exchange (ETDEWEB)

    Ziada, G.; Abdel-Dayem, H.M.; Higazy, E.; Mohamed, M.M.; Bahar, R.; Hayat, N.; Yousof, A.M.

    1987-03-01

    A dual gated tomography (DGT) program for end systolic and end diastolic acquisition and subsequent processing for calculation of LVEF, end diastolic and end systolic volumes (EDV, ESV) has been evaluated in 20 healthy volunteers (25 years-40 years) and 45 patients (25 years-60 years): 20 with ischaemic heart disease and 25 with valvular heart disease (VHD). All had biplane multigated blood pool (MUGA) studies in the 40/sup 0/ LAO projection using in vivo /sup 99m/Tc-R BCs, immediately followed by DG. The results in the patients group were correlated with contrast ventriculography (CV). In the volunteer group, the normal values for LVEF, EDV and ESV measured with DGT were found to be 63%+10%, 91 ml + 6 ml and 30 ml + 6ml and r value for the LVEF=0.91 compared with MUGA. In the IHD group, r values compared with CV were 0.915 and 0.97 for the EDV and ESV and 0.934 for the LVEF. Compared with the MUGA, the r value for LVEF was 0.883. In the VHD group, r values were 0.98 for both the EDV and ESV and 0.948 for the LVEF (P<0.002) compared with CV and 0.789 for the LVEF compared with the MUGA. We feel that DGT is an accurate and reproducible technique for LV function measurements.

  19. Post hoc interlaboratory comparison of single particle ICP-MS size measurements of NIST gold nanoparticle reference materials.

    Science.gov (United States)

    Montoro Bustos, Antonio R; Petersen, Elijah J; Possolo, Antonio; Winchester, Michael R

    2015-09-01

    Single particle inductively coupled plasma-mass spectrometry (spICP-MS) is an emerging technique that enables simultaneous measurement of nanoparticle size and number quantification of metal-containing nanoparticles at realistic environmental exposure concentrations. Such measurements are needed to understand the potential environmental and human health risks of nanoparticles. Before spICP-MS can be considered a mature methodology, additional work is needed to standardize this technique including an assessment of the reliability and variability of size distribution measurements and the transferability of the technique among laboratories. This paper presents the first post hoc interlaboratory comparison study of the spICP-MS technique. Measurement results provided by six expert laboratories for two National Institute of Standards and Technology (NIST) gold nanoparticle reference materials (RM 8012 and RM 8013) were employed. The general agreement in particle size between spICP-MS measurements and measurements by six reference techniques demonstrates the reliability of spICP-MS and validates its sizing capability. However, the precision of the spICP-MS measurement was better for the larger 60 nm gold nanoparticles and evaluation of spICP-MS precision indicates substantial variability among laboratories, with lower variability between operators within laboratories. Global particle number concentration and Au mass concentration recovery were quantitative for RM 8013 but significantly lower and with a greater variability for RM 8012. Statistical analysis did not suggest an optimal dwell time, because this parameter did not significantly affect either the measured mean particle size or the ability to count nanoparticles. Finally, the spICP-MS data were often best fit with several single non-Gaussian distributions or mixtures of Gaussian distributions, rather than the more frequently used normal or log-normal distributions.

  20. Materials

    CSIR Research Space (South Africa)

    Van Wyk, Llewellyn V

    2009-02-01

    Full Text Available . It is generally included as part of a structurally insulated panel (SIP) where the foam is sandwiched between external skins of steel, wood or cement. Cement composites Cement bonded composites are an important class of building materials. These products... for their stone buildings, including the Egyptians, Aztecs and Inca’s. As stone is a very dense material it requires intensive heating to become warm. Rocks were generally stacked dry but mud, and later cement, can be used as a mortar to hold the rocks...

  1. An integrated bioimpedance—ECG gating technique for respiratory and cardiac motion compensation in cardiac PET

    International Nuclear Information System (INIS)

    Koivumäki, Tuomas; Nekolla, Stephan G; Fürst, Sebastian; Loher, Simone; Schwaiger, Markus; Vauhkonen, Marko; Hakulinen, Mikko A

    2014-01-01

    Respiratory motion may degrade image quality in cardiac PET imaging. Since cardiac PET studies often involve cardiac gating by ECG, a separate respiratory monitoring system is required increasing the logistic complexity of the examination, in case respiratory gating is also needed. Thus, we investigated the simultaneous acquisition of both respiratory and cardiac gating signals using II limb lead mimicking electrode configuration during cardiac PET scans of 11 patients. In addition to conventional static and ECG-gated images, bioimpedance technique was utilized to generate respiratory- and dual-gated images. The ability of the bioimpedance technique to monitor intrathoracic respiratory motion was assessed estimating cardiac displacement between end-inspiration and -expiration. The relevance of dual gating was evaluated in left ventricular volume and myocardial wall thickness measurements. An average 7.6  ±  3.3 mm respiratory motion was observed in the study population. Dual gating showed a small but significant increase (4 ml, p = 0.042) in left ventricular myocardial volume compared to plain cardiac gating. In addition, a thinner myocardial wall was observed in dual-gated images (9.3  ±  1.3 mm) compared to cardiac-gated images (11.3  ±  1.3 mm, p = 0.003). This study shows the feasibility of bioimpedance measurements for dual gating in a clinical setting. The method enables simultaneous acquisition of respiratory and cardiac gating signals using a single device with standard ECG electrodes. (paper)

  2. In Vivo skin hydration and anti-erythema effects of Aloe vera, Aloe ferox and Aloe marlothii gel materials after single and multiple applications

    Science.gov (United States)

    Fox, Lizelle T.; du Plessis, Jeanetta; Gerber, Minja; van Zyl, Sterna; Boneschans, Banie; Hamman, Josias H.

    2014-01-01

    Objective: To investigate the skin hydrating and anti-erythema activity of gel materials from Aloe marlothii A. Berger and A. ferox Mill. in comparison to that of Aloe barbadensis Miller (Aloe vera) in healthy human volunteers. Materials and Methods: Aqueous solutions of the polisaccharidic fractions of the selected aloe leaf gel materials were applied to the volar forearm skin of female subjects. The hydration effect of the aloe gel materials were measured with a Corneometer® CM 825, Visioscan® VC 98 and Cutometer® dual MPA 580 after single and multiple applications. The Mexameter® MX 18 was used to determine the anti-erythema effects of the aloe material solutions on irritated skin areas. Results: The A. vera and A. marlothii gel materials hydrated the skin after a single application, whereas the A. ferox gel material showed dehydration effects compared to the placebo. After multiple applications all the aloe materials exhibited dehydration effects on the skin. Mexameter® readings showed that A. vera and A. ferox have anti-erythema activity similar to that of the positive control group (i.e. hydrocortisone gel) after 6 days of treatment. Conclusion: The polysaccharide component of the gel materials from selected aloe species has a dehydrating effect on the skin after multiple applications. Both A. vera and A. ferox gel materials showed potential to reduce erythema on the skin similar to that of hydrocortisone gel. PMID:24991119

  3. Cellular automata modeling depicts degradation of cellulosic material by a cellulase system with single-molecule resolution.

    Science.gov (United States)

    Eibinger, Manuel; Zahel, Thomas; Ganner, Thomas; Plank, Harald; Nidetzky, Bernd

    2016-01-01

    Enzymatic hydrolysis of cellulose involves the spatiotemporally correlated action of distinct polysaccharide chain cleaving activities confined to the surface of an insoluble substrate. Because cellulases differ in preference for attacking crystalline compared to amorphous cellulose, the spatial distribution of structural order across the cellulose surface imposes additional constraints on the dynamic interplay between the enzymes. Reconstruction of total system behavior from single-molecule activity parameters is a longstanding key goal in the field. We have developed a stochastic, cellular automata-based modeling approach to describe degradation of cellulosic material by a cellulase system at single-molecule resolution. Substrate morphology was modeled to represent the amorphous and crystalline phases as well as the different spatial orientations of the polysaccharide chains. The enzyme system model consisted of an internally chain-cleaving endoglucanase (EG) as well as two processively acting, reducing and non-reducing chain end-cleaving cellobiohydrolases (CBHs). Substrate preference (amorphous: EG, CBH II; crystalline: CBH I) and characteristic frequencies for chain cleavage, processive movement, and dissociation were assigned from biochemical data. Once adsorbed, enzymes were allowed to reach surface-exposed substrate sites through "random-walk" lateral diffusion or processive motion. Simulations revealed that slow dissociation of processive enzymes at obstacles obstructing further movement resulted in local jamming of the cellulases, with consequent delay in the degradation of the surface area affected. Exploiting validation against evidence from atomic force microscopy imaging as a unique opportunity opened up by the modeling approach, we show that spatiotemporal characteristics of cellulose surface degradation by the system of synergizing cellulases were reproduced quantitatively at the nanometer resolution of the experimental data. This in turn gave

  4. Toxicokinetics and toxicological effects of single oral dose of fumonisin B1 containing Fusarium verticillioides culture material in weaned piglets.

    Science.gov (United States)

    Dilkin, P; Direito, G; Simas, M M S; Mallmann, C A; Corrêa, B

    2010-05-14

    Toxicokinetics and the toxicological effects of culture material containing fumonisin B(1) (FB(1)) were studied in male weaned piglets by clinical, pathological, biochemical and sphingolipid analyses. The animals received a single oral dose of 5 mg FB(1)/kg of body weight, obtained from Fusarium verticillioides culture material. FB(1) was detected by HPLC in plasma collected at 1-h intervals up to 6h and at 12-h intervals up to 96 h. FB(1) eliminated in feces and urine was quantified over a 96-h period and in liver samples collected 96 h post-intoxication. Blood samples were obtained at the beginning and end of the experiment to determine serum enzyme activity, total bilirubin, cholesterol, sphinganine (Sa), sphingosine (So) and the Sa/So ratio. FB(1) was detected in plasma between 30 min and 36 h after administration. The highest concentration of FB(1) was observed after 2 h, with a mean concentration of 282 microg/ml. Only 0.93% of the total FB(1) was detected in urine between 75 min and 41 h after administration, the highest mean concentration (561 microg/ml) was observed during the interval after 8 at 24 h. Approximately 76.5% of FB(1) was detected in feces eliminated between 8 and 84 h after administration, with the highest levels observed between 8 and 24 h. Considering the biochemical parameters, a significant increase only occurred in cholesterol, alkaline phosphatase and aspartate aminotransferase activities. In plasma and urine, the highest Sa and Sa/So ratios were obtained at 12 and 48 h, respectively. Copyright 2010 Elsevier Ireland Ltd. All rights reserved.

  5. 3D modeling of dual-gate FinFET.

    Science.gov (United States)

    Mil'shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

    2012-11-13

    The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence on the strengths of the electrical field along the channel. However, in cases when the ratio of FinFET volume to its surface dramatically decreases, one should carefully consider the surface boundary conditions of the device. Moreover, the inherent non-planar nature of a FinFET demands 3D modeling for accurate analysis of the device performance. Using the Silvaco modeling tool with quantization effects, we modeled a physical FinFET described in the work of Hisamoto et al. (IEEE Tran. Elec. Devices 47:12, 2000) in 3D. We compared it with a 2D model of the same device. We demonstrated that 3D modeling produces more accurate results. As 3D modeling results came close to experimental measurements, we made the next step of the study by designing a dual-gate FinFET biased at Vg1 >Vg2. It is shown that the dual-gate FinFET carries higher transconductance than the single-gate device.

  6. Behaviour of a series of reservoirs separated by drowned gates

    Science.gov (United States)

    Kolechkina, Alla; van Nooijen, Ronald

    2017-04-01

    Modern control systems tend to be based on computers and therefore to operate by sending commands to structures at given intervals (discrete time control system). Moreover, for almost all water management control systems there are practical lower limits on the time interval between structure adjustments and even between measurements. The water resource systems that are being controlled are physical systems whose state changes continuously. If we combine a continuously changing system and a discrete time controller we get a hybrid system. We use material from recent control theory literature to examine the behaviour of a series of reservoirs separated by drowned gates where the gates are under computer control.

  7. New opening hours of the gates

    CERN Multimedia

    GS Department

    2009-01-01

    Please note the new opening hours of the gates as well as the intersites tunnel from the 19 May 2009: GATE A 7h - 19h GATE B 24h/24 GATE C 7h - 9h\t17h - 19h GATE D 8h - 12h\t13h - 16h GATE E 7h - 9h\t17h - 19h Prévessin 24h/24 The intersites tunnel will be opened from 7h30 to 18h non stop. GS-SEM Group Infrastructure and General Services Department

  8. Pulsed laser deposition of chalcogenide sulfides from multi- and single-component targets: the non-stoichiometric material transfer

    DEFF Research Database (Denmark)

    Schou, Jørgen; Ganskukh, Mungunshagai; Ettlinger, Rebecca Bolt

    2018-01-01

    The mass transfer from target to films is incongruent for chalcogenide sulfides in contrast to the expectations of pulsed laser deposition (PLD) as a stoichiometric film growth process. Films produced from a CZTS (Cu2ZnSnS4) multi-component target have no Cu below a fluence threshold of 0.2 J/cm2......, and the Cu content is also very low at low fluence from a single-component target. Above this threshold, the Cu content in the films increases almost linearly up to a value above the stoichiometric value, while the ratio of the concentration of the other metals Zn to Sn (Zn/Sn) remains constant. Films...... of a similar material CTS (Cu2SnS3) have been produced by PLD from a CTS target and exhibits a similar trend in the same fluence region. The results are discussed on the basis of solid-state data and the existing data from the literature....

  9. Ferritin-Templated Quantum-Dots for Quantum Logic Gates

    Science.gov (United States)

    Choi, Sang H.; Kim, Jae-Woo; Chu, Sang-Hyon; Park, Yeonjoon; King, Glen C.; Lillehei, Peter T.; Kim, Seon-Jeong; Elliott, James R.

    2005-01-01

    Quantum logic gates (QLGs) or other logic systems are based on quantum-dots (QD) with a stringent requirement of size uniformity. The QD are widely known building units for QLGs. The size control of QD is a critical issue in quantum-dot fabrication. The work presented here offers a new method to develop quantum-dots using a bio-template, called ferritin, that ensures QD production in uniform size of nano-scale proportion. The bio-template for uniform yield of QD is based on a ferritin protein that allows reconstitution of core material through the reduction and chelation processes. One of the biggest challenges for developing QLG is the requirement of ordered and uniform size of QD for arrays on a substrate with nanometer precision. The QD development by bio-template includes the electrochemical/chemical reconsitution of ferritins with different core materials, such as iron, cobalt, manganese, platinum, and nickel. The other bio-template method used in our laboratory is dendrimers, precisely defined chemical structures. With ferritin-templated QD, we fabricated the heptagonshaped patterned array via direct nano manipulation of the ferritin molecules with a tip of atomic force microscope (AFM). We also designed various nanofabrication methods of QD arrays using a wide range manipulation techniques. The precise control of the ferritin-templated QD for a patterned arrangement are offered by various methods, such as a site-specific immobilization of thiolated ferritins through local oxidation using the AFM tip, ferritin arrays induced by gold nanoparticle manipulation, thiolated ferritin positioning by shaving method, etc. In the signal measurements, the current-voltage curve is obtained by measuring the current through the ferritin, between the tip and the substrate for potential sweeping or at constant potential. The measured resistance near zero bias was 1.8 teraohm for single holoferritin and 5.7 teraohm for single apoferritin, respectively.

  10. Efficient Nonlocal M-Control and N-Target Controlled Unitary Gate Using Non-symmetric GHZ States

    Science.gov (United States)

    Chen, Li-Bing; Lu, Hong

    2018-03-01

    Efficient local implementation of a nonlocal M-control and N-target controlled unitary gate is considered. We first show that with the assistance of two non-symmetric qubit(1)-qutrit(N) Greenberger-Horne-Zeilinger (GHZ) states, a nonlocal 2-control and N-target controlled unitary gate can be constructed from 2 local two-qubit CNOT gates, 2 N local two-qutrit conditional SWAP gates, N local qutrit-qubit controlled unitary gates, and 2 N single-qutrit gates. At each target node, the two third levels of the two GHZ target qutrits are used to expose one and only one initial computational state to the local qutrit-qubit controlled unitary gate, instead of being used to hide certain states from the conditional dynamics. This scheme can be generalized straightforwardly to implement a higher-order nonlocal M-control and N-target controlled unitary gate by using M non-symmetric qubit(1)-qutrit(N) GHZ states as quantum channels. Neither the number of the additional levels of each GHZ target particle nor that of single-qutrit gates needs to increase with M. For certain realistic physical systems, the total gate time may be reduced compared with that required in previous schemes.

  11. An EPMA study on KNbO3 and NaNbO3 single crystals - potential reference materials for quantitative microanalysis

    International Nuclear Information System (INIS)

    Samardzzija, Z.; Bernik, S.; Malic, B.; Ceh, M.; Marinenko, R.B.

    2004-01-01

    Single crystals of KNbO 3 and NaNbO 3 were selected from the limited number of suitable alkali compounds that are available and evaluated as possible reference materials for the electron-probe microanalysis (EPMA) of alkaline niobates with a composition described by the general formula K 1-x Na x NbO 3 . The EPMA study verified that KNbO 3 and NaNbO 3 single crystals are stable under the electron beam and compositionally homogeneous. A quantitative microanalysis confirmed the composition of pure KNbO 3 , while the NaNbO 3 crystal contained 0.3 mass fraction % of Ca. A significant improvement in the accuracy of the quantitative EPMA of polycrystalline potassium-sodium niobates was achieved using these single crystals as standards. The crystals can also be useful as reference materials for the analysis of sodium and potassium in other materials. (author)

  12. Energy-loss return gate via liquid dielectric polarization.

    Science.gov (United States)

    Kim, Taehun; Yong, Hyungseok; Kim, Banseok; Kim, Dongseob; Choi, Dukhyun; Park, Yong Tae; Lee, Sangmin

    2018-04-12

    There has been much research on renewable energy-harvesting techniques. However, owing to increasing energy demands, significant energy-related issues remain to be solved. Efforts aimed at reducing the amount of energy loss in electric/electronic systems are essential for reducing energy consumption and protecting the environment. Here, we design an energy-loss return gate system that reduces energy loss from electric/electronic systems by utilizing the polarization of liquid dielectrics. The use of a liquid dielectric material in the energy-loss return gate generates electrostatic potential energy while reducing the dielectric loss of the electric/electronic system. Hence, an energy-loss return gate can make breakthrough impacts possible by amplifying energy-harvesting efficiency, lowering the power consumption of electronics, and storing the returned energy. Our study indicates the potential for enhancing energy-harvesting technologies for electric/electronics systems, while increasing the widespread development of these systems.

  13. Toward error-free scaled spin torque majority gates

    Energy Technology Data Exchange (ETDEWEB)

    Vaysset, Adrien; Manfrini, Mauricio; Pourtois, Geoffrey; Radu, Iuliana P.; Thean, Aaron [IMEC, Kapeldreef 75, 3001 Leuven (Belgium); Nikonov, Dmitri E.; Manipatruni, Sasikanth; Young, Ian A. [Exploratory Integrated Circuits, Components Research, Intel Corp., Hillsboro, Oregon 97124 (United States)

    2016-06-15

    The functionality of a cross-shaped Spin Torque Majority Gate is explored by means of micromagnetic simulations. The different input combinations are simulated varying material parameters, current density and size. The main failure mode is identified: above a critical size, a domain wall can be pinned at the center of the cross, preventing further propagation of the information. By simulating several phase diagrams, the key parameters are obtained and the operating condition is deduced. A simple relation between the domain wall width and the size of the Spin Torque Majority Gate determines the working range. Finally, a correlation is found between the energy landscape and the main failure mode. We demonstrate that a macrospin behavior ensures a reliable majority gate operation.

  14. Toward error-free scaled spin torque majority gates

    Directory of Open Access Journals (Sweden)

    Adrien Vaysset

    2016-06-01

    Full Text Available The functionality of a cross-shaped Spin Torque Majority Gate is explored by means of micromagnetic simulations. The different input combinations are simulated varying material parameters, current density and size. The main failure mode is identified: above a critical size, a domain wall can be pinned at the center of the cross, preventing further propagation of the information. By simulating several phase diagrams, the key parameters are obtained and the operating condition is deduced. A simple relation between the domain wall width and the size of the Spin Torque Majority Gate determines the working range. Finally, a correlation is found between the energy landscape and the main failure mode. We demonstrate that a macrospin behavior ensures a reliable majority gate operation.

  15. Respiratory gating in cardiac PET

    DEFF Research Database (Denmark)

    Lassen, Martin Lyngby; Rasmussen, Thomas; Christensen, Thomas E

    2017-01-01

    BACKGROUND: Respiratory motion due to breathing during cardiac positron emission tomography (PET) results in spatial blurring and erroneous tracer quantification. Respiratory gating might represent a solution by dividing the PET coincidence dataset into smaller respiratory phase subsets. The aim...... of our study was to compare the resulting imaging quality by the use of a time-based respiratory gating system in two groups administered either adenosine or dipyridamole as the pharmacological stress agent. METHODS AND RESULTS: Forty-eight patients were randomized to adenosine or dipyridamole cardiac...... stress (82)RB-PET. Respiratory rates and depths were measured by a respiratory gating system in addition to registering actual respiratory rates. Patients undergoing adenosine stress showed a decrease in measured respiratory rate from initial to later scan phase measurements [12.4 (±5.7) vs 5.6 (±4...

  16. Robustness of holonomic quantum gates

    International Nuclear Information System (INIS)

    Solinas, P.; Zanardi, P.; Zanghi, N.

    2005-01-01

    Full text: If the driving field fluctuates during the quantum evolution this produces errors in the applied operator. The holonomic (and geometrical) quantum gates are believed to be robust against some kind of noise. Because of the geometrical dependence of the holonomic operators can be robust against this kind of noise; in fact if the fluctuations are fast enough they cancel out leaving the final operator unchanged. I present the numerical studies of holonomic quantum gates subject to this parametric noise, the fidelity of the noise and ideal evolution is calculated for different noise correlation times. The holonomic quantum gates seem robust not only for fast fluctuating fields but also for slow fluctuating fields. These results can be explained as due to the geometrical feature of the holonomic operator: for fast fluctuating fields the fluctuations are canceled out, for slow fluctuating fields the fluctuations do not perturb the loop in the parameter space. (author)

  17. In Vivo skin hydration and anti-erythema effects of Aloe vera, Aloe ferox and Aloe marlothii gel materials after single and multiple applications.

    Science.gov (United States)

    Fox, Lizelle T; du Plessis, Jeanetta; Gerber, Minja; van Zyl, Sterna; Boneschans, Banie; Hamman, Josias H

    2014-04-01

    To investigate the skin hydrating and anti-erythema activity of gel materials from Aloe marlothii A. Berger and A. ferox Mill. in comparison to that of Aloe barbadensis Miller (Aloe vera) in healthy human volunteers. Aqueous solutions of the polisaccharidic fractions of the selected aloe leaf gel materials were applied to the volar forearm skin of female subjects. The hydration effect of the aloe gel materials were measured with a Corneometer(®) CM 825, Visioscan(®) VC 98 and Cutometer(®) dual MPA 580 after single and multiple applications. The Mexameter(®) MX 18 was used to determine the anti-erythema effects of the aloe material solutions on irritated skin areas. The A. vera and A. marlothii gel materials hydrated the skin after a single application, whereas the A. ferox gel material showed dehydration effects compared to the placebo. After multiple applications all the aloe materials exhibited dehydration effects on the skin. Mexameter(®) readings showed that A. vera and A. ferox have anti-erythema activity similar to that of the positive control group (i.e. hydrocortisone gel) after 6 days of treatment. The polysaccharide component of the gel materials from selected aloe species has a dehydrating effect on the skin after multiple applications. Both A. vera and A. ferox gel materials showed potential to reduce erythema on the skin similar to that of hydrocortisone gel.

  18. Parallel Transport Quantum Logic Gates with Trapped Ions.

    Science.gov (United States)

    de Clercq, Ludwig E; Lo, Hsiang-Yu; Marinelli, Matteo; Nadlinger, David; Oswald, Robin; Negnevitsky, Vlad; Kienzler, Daniel; Keitch, Ben; Home, Jonathan P

    2016-02-26

    We demonstrate single-qubit operations by transporting a beryllium ion with a controlled velocity through a stationary laser beam. We use these to perform coherent sequences of quantum operations, and to perform parallel quantum logic gates on two ions in different processing zones of a multiplexed ion trap chip using a single recycled laser beam. For the latter, we demonstrate individually addressed single-qubit gates by local control of the speed of each ion. The fidelities we observe are consistent with operations performed using standard methods involving static ions and pulsed laser fields. This work therefore provides a path to scalable ion trap quantum computing with reduced requirements on the optical control complexity.

  19. Gate modulation of proton transport in a nanopore.

    Science.gov (United States)

    Mei, Lanju; Yeh, Li-Hsien; Qian, Shizhi

    2016-03-14

    Proton transport in confined spaces plays a crucial role in many biological processes as well as in modern technological applications, such as fuel cells. To achieve active control of proton conductance, we investigate for the first time the gate modulation of proton transport in a pH-regulated nanopore by a multi-ion model. The model takes into account surface protonation/deprotonation reactions, surface curvature, electroosmotic flow, Stern layer, and electric double layer overlap. The proposed model is validated by good agreement with the existing experimental data on nanopore conductance with and without a gate voltage. The results show that the modulation of proton transport in a nanopore depends on the concentration of the background salt and solution pH. Without background salt, the gated nanopore exhibits an interesting ambipolar conductance behavior when pH is close to the isoelectric point of the dielectric pore material, and the net ionic and proton conductance can be actively regulated with a gate voltage as low as 1 V. The higher the background salt concentration, the lower is the performance of the gate control on the proton transport.

  20. ZIF-8 gate tuning via terminal group modification: a computational study

    KAUST Repository

    Zheng, Bin; Wang, Lian Li; Du, Lifei; Huang, Kuo-Wei; Du, Huiling

    2016-01-01

    Tuning the pore structure of zeolitic imidazolate frameworks (ZIFs) enables unique control of their material properties. In this work, we used computational methods to examine the gate structure of ZIF-8 tuned by substitution terminal groups

  1. Biomechanical characteristics of single-row repair in comparison to double-row repair with consideration of the suture configuration and suture material

    OpenAIRE

    Baums, M. H.; Buchhorn, G. H.; Spahn, G.; Poppendieck, B.; Schultz, W.; Klinger, H.-M.

    2008-01-01

    The aim of the study was to evaluate the time zero mechanical properties of single- versus double-row configuration for rotator cuff repair in an animal model with consideration of the stitch technique and suture material. Thirty-two fresh-frozen sheep shoulders were randomly assigned to four repair groups: suture anchor single-row repair coupled with (1) braided, nonabsorbable polyester suture sized USP No. 2 (SRAE) or (2) braided polyblend polyethylene suture sized No. 2 (SRAH). The double-...

  2. Economic Development Planning for Single Parents. Curriculum Materials for Vocational Teachers of Adolescents and Single Parents. Special Emphasis on Meeting the Needs of the Teen Parent.

    Science.gov (United States)

    Simpson, Kawanna J.; And Others

    This guide is intended for use in school-based intervention programs intended to help single parents (particularly teenagers who are expecting or already have a child) master basic money management and consumer skills. The guide is divided into sections dealing with the following topics: interpersonal relationships, value clarification,…

  3. Light-effect transistor (LET) with multiple independent gating controls for optical logic gates and optical amplification

    Science.gov (United States)

    Marmon, Jason; Rai, Satish; Wang, Kai; Zhou, Weilie; Zhang, Yong

    The pathway for CMOS technology beyond the 5-nm technology node remains unclear for both physical and technological reasons. A new transistor paradigm is required. A LET (Marmon et. al., Front. Phys. 2016, 4, No. 8) offers electronic-optical hybridization at the component level, and is capable of continuing Moore's law to the quantum scale. A LET overcomes a FET's fabrication complexity, e.g., physical gate and doping, by employing optical gating and photoconductivity, while multiple independent, optical gates readily realize unique functionalities. We report LET device characteristics and novel digital and analog applications, such as optical logic gates and optical amplification. Prototype CdSe-nanowire-based LETs, incorporating an M-S-M structure, show output and transfer characteristics resembling advanced FETs, e.g., on/off ratios up to 106 with a source-drain voltage of 1.43V, gate-power of 260nW, and a subthreshold swing of 0.3nW/decade (excluding losses). A LET has potential for high-switching (THz) speeds and extremely low-switching energies (aJ) in the ballistic transport region. Our work offers new electronic-optical integration strategies for high speed and low energy computing approaches, which could potentially be extended to other materials and devices.

  4. Feedback-tuned, noise resilient gates for encoded spin qubits

    Science.gov (United States)

    Bluhm, Hendrik

    Spin 1/2 particles form native two level systems and thus lend themselves as a natural qubit implementation. However, encoding a single qubit in several spins entails benefits, such as reducing the resources necessary for qubit control and protection from certain decoherence channels. While several varieties of such encoded spin qubits have been implemented, accurate control remains challenging, and leakage out of the subspace of valid qubit states is a potential issue. Optimal performance typically requires large pulse amplitudes for fast control, which is prone to systematic errors and prohibits standard control approaches based on Rabi flopping. Furthermore, the exchange interaction typically used to electrically manipulate encoded spin qubits is inherently sensitive to charge noise. I will discuss all-electrical, high-fidelity single qubit operations for a spin qubit encoded in two electrons in a GaAs double quantum dot. Starting from a set of numerically optimized control pulses, we employ an iterative tuning procedure based on measured error syndromes to remove systematic errors.Randomized benchmarking yields an average gate fidelity exceeding 98 % and a leakage rate into invalid states of 0.2 %. These gates exhibit a certain degree of resilience to both slow charge and nuclear spin fluctuations due to dynamical correction analogous to a spin echo. Furthermore, the numerical optimization minimizes the impact of fast charge noise. Both types of noise make relevant contributions to gate errors. The general approach is also adaptable to other qubit encodings and exchange based two-qubit gates.

  5. Single-step preparation of TiO2/MWCNT Nanohybrid materials by laser pyrolysis and application to efficient photovoltaic energy conversion.

    Science.gov (United States)

    Wang, Jin; Lin, Yaochen; Pinault, Mathieu; Filoramo, Arianna; Fabert, Marc; Ratier, Bernard; Bouclé, Johann; Herlin-Boime, Nathalie

    2015-01-14

    This paper presents the continuous-flowand single-step synthesis of a TiO2/MWCNT (multiwall carbon nanotubes) nanohybrid material. The synthesis method allows achieving high coverage and intimate interface between the TiO2particles and MWCNTs, together with a highly homogeneous distribution of nanotubes within the oxide. Such materials used as active layer in theporous photoelectrode of solid-state dye-sensitized solar cells leads to a substantial performance improvement (20%) as compared to reference devices.

  6. Trapped-ion quantum logic gates based on oscillating magnetic fields

    Science.gov (United States)

    Ospelkaus, Christian; Langer, Christopher E.; Amini, Jason M.; Brown, Kenton R.; Leibfried, Dietrich; Wineland, David J.

    2009-05-01

    Oscillating magnetic fields and field gradients can be used to implement single-qubit rotations and entangling multiqubit quantum gates for trapped-ion quantum information processing. With fields generated by currents in microfabricated surface-electrode traps, it should be possible to achieve gate speeds that are comparable to those of optically induced gates for realistic distances between the ions and the electrode surface. Magnetic-field-mediated gates have the potential to significantly reduce the overhead in laser-beam control and motional-state initialization compared to current QIP experiments with trapped ions and will eliminate spontaneous scattering decoherence, a fundamental source of decoherence in laser-mediated gates. A potentially beneficial environment for the implementation of such schemes is a cryogenic ion trap, because small length scale traps with low motional heating rates can be realized. A cryogenic ion trap experiment is currently under construction at NIST.

  7. Two-dimensional threshold voltage model and design considerations for gate electrode work function engineered recessed channel nanoscale MOSFET: I

    International Nuclear Information System (INIS)

    Chaujar, Rishu; Kaur, Ravneet; Gupta, Mridula; Gupta, R S; Saxena, Manoj

    2009-01-01

    This paper discusses a threshold voltage model for novel device structure: gate electrode work function engineered recessed channel (GEWE-RC) nanoscale MOSFET, which combines the advantages of both RC and GEWE structures. In part I, the model accurately predicts (a) surface potential, (b) threshold voltage and (c) sub-threshold slope for single material gate recessed channel (SMG-RC) and GEWE-RC structures. Part II focuses on the development of compact analytical drain current model taking into account the transition regimes from sub-threshold to saturation. Furthermore, the drain conductance evaluation has also been obtained, reflecting relevance of the proposed device for analogue design. The analysis takes into account the effect of gate length and groove depth in order to develop a compact model suitable for device design. The analytical results predicted by the model confirm well with the simulated results. Results in part I also provide valuable design insights in the performance of nanoscale GEWE-RC MOSFET with optimum threshold voltage and negative junction depth (NJD), and hence serves as a tool to optimize important device and technological parameters for 40 nm technology

  8. Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors.

    Science.gov (United States)

    Gu, Weixia; Shen, Jiaoyan; Ma, Xiying

    2014-02-28

    Two-dimensional (2D) molybdenum disulfide (MoS2) is an attractive alternative semiconductor material for next-generation low-power nanoelectronic applications, due to its special structure and large bandgap. Here, we report the fabrication of large-area MoS2 nanodiscs and their incorporation into back-gated field effect transistors (FETs) whose electrical properties we characterize. The MoS2 nanodiscs, fabricated via chemical vapor deposition (CVD), are homogeneous and continuous, and their thickness of around 5 nm is equal to a few layers of MoS2. In addition, we find that the MoS2 nanodisc-based back-gated field effect transistors with nickel electrodes achieve very high performance. The transistors exhibit an on/off current ratio of up to 1.9 × 105, and a maximum transconductance of up to 27 μS (5.4 μS/μm). Moreover, their mobility is as high as 368 cm2/Vs. Furthermore, the transistors have good output characteristics and can be easily modulated by the back gate. The electrical properties of the MoS2 nanodisc transistors are better than or comparable to those values extracted from single and multilayer MoS2 FETs.

  9. Fast quantum logic gates with trapped-ion qubits

    Science.gov (United States)

    Schäfer, V. M.; Ballance, C. J.; Thirumalai, K.; Stephenson, L. J.; Ballance, T. G.; Steane, A. M.; Lucas, D. M.

    2018-03-01

    Quantum bits (qubits) based on individual trapped atomic ions are a promising technology for building a quantum computer. The elementary operations necessary to do so have been achieved with the required precision for some error-correction schemes. However, the essential two-qubit logic gate that is used to generate quantum entanglement has hitherto always been performed in an adiabatic regime (in which the gate is slow compared with the characteristic motional frequencies of the ions in the trap), resulting in logic speeds of the order of 10 kilohertz. There have been numerous proposals of methods for performing gates faster than this natural ‘speed limit’ of the trap. Here we implement one such method, which uses amplitude-shaped laser pulses to drive the motion of the ions along trajectories designed so that the gate operation is insensitive to the optical phase of the pulses. This enables fast (megahertz-rate) quantum logic that is robust to fluctuations in the optical phase, which would otherwise be an important source of experimental error. We demonstrate entanglement generation for gate times as short as 480 nanoseconds—less than a single oscillation period of an ion in the trap and eight orders of magnitude shorter than the memory coherence time measured in similar calcium-43 hyperfine qubits. The power of the method is most evident at intermediate timescales, at which it yields a gate error more than ten times lower than can be attained using conventional techniques; for example, we achieve a 1.6-microsecond-duration gate with a fidelity of 99.8 per cent. Faster and higher-fidelity gates are possible at the cost of greater laser intensity. The method requires only a single amplitude-shaped pulse and one pair of beams derived from a continuous-wave laser. It offers the prospect of combining the unrivalled coherence properties, operation fidelities and optical connectivity of trapped-ion qubits with the submicrosecond logic speeds that are usually

  10. Relating mechanical properties and chemical bonding in an inorganic-organic framework material: a single-crystal nanoindentation study.

    Science.gov (United States)

    Tan, Jin Chong; Furman, Joshua D; Cheetham, Anthony K

    2009-10-14

    We report the application of nanoindentation and atomic force microscopy to establish the fundamental relationships between mechanical properties and chemical bonding in a dense inorganic-organic framework material: Ce(C(2)O(4))(HCO(2)), 1. Compound 1 is a mixed-ligand 3-D hybrid which crystallizes in an orthorhombic space group, in which its three basic building blocks, i.e. the inorganic metal-oxygen-metal (M-O-M) chains and the two organic bridging ligands, (oxalate and formate) are all oriented perpendicular to one another. This unique architecture enabled us to decouple the elastic and plastic mechanical responses along the three primary axes of a single crystal to understand the contribution associated with stiff vs compliant basic building blocks. The (001)-oriented facet that features rigid oxalate ligands down the c-axis exhibits the highest stiffness and hardness (E approximately 78 GPa and H approximately 4.6 GPa). In contrast, the (010)-oriented facet was found to be the most compliant and soft (E approximately 43 GPa and H approximately 3.9 GPa), since the formate ligand, which is the more compliant building block within this framework, constitutes the primary linkages down the b-axis. Notably, intermediate stiffness and hardness (E approximately 52 GPa and H approximately 4.1 GPa) were measured on the (100)-oriented planes. This can be attributed to the Ce-O-Ce chains that zigzag down the a-axis (Ce...Ce metal centers form an angle of approximately 132 degrees) and also the fact that the 9-coordinated CeO(9) polyhedra are expected to be geometrically more compliant. Our results present the first conclusive evidence that the crystal orientation dominated by inorganic chains is not necessarily more robust from the mechanical properties standpoint. Rigid organic bridging ligands (such as oxalate), on the other hand, can be used to produce greater stiffness and hardness properties in a chosen crystallographic orientation. This study demonstrates that

  11. Dynamic gating window for compensation of baseline shift in respiratory-gated radiation therapy

    International Nuclear Information System (INIS)

    Pepin, Eric W.; Wu Huanmei; Shirato, Hiroki

    2011-01-01

    Purpose: To analyze and evaluate the necessity and use of dynamic gating techniques for compensation of baseline shift during respiratory-gated radiation therapy of lung tumors. Methods: Motion tracking data from 30 lung tumors over 592 treatment fractions were analyzed for baseline shift. The finite state model (FSM) was used to identify the end-of-exhale (EOE) breathing phase throughout each treatment fraction. Using duty cycle as an evaluation metric, several methods of end-of-exhale dynamic gating were compared: An a posteriori ideal gating window, a predictive trend-line-based gating window, and a predictive weighted point-based gating window. These methods were evaluated for each of several gating window types: Superior/inferior (SI) gating, anterior/posterior beam, lateral beam, and 3D gating. Results: In the absence of dynamic gating techniques, SI gating gave a 39.6% duty cycle. The ideal SI gating window yielded a 41.5% duty cycle. The weight-based method of dynamic SI gating yielded a duty cycle of 36.2%. The trend-line-based method yielded a duty cycle of 34.0%. Conclusions: Dynamic gating was not broadly beneficial due to a breakdown of the FSM's ability to identify the EOE phase. When the EOE phase was well defined, dynamic gating showed an improvement over static-window gating.

  12. Travels with Gates - July 2010

    Science.gov (United States)

    New Sanctions SEOUL, South Korea, July 21, 2010 - Secretary of State Hillary Rodham Clinton, in Seoul - Secretary of State Hillary Rodham Clinton and Defense Secretary Robert M. Gates reaffirmed the U.S zone along with Secretary of State Hillary Rodham Clinton and their South Korean counterparts to

  13. Double-disc gate valve

    International Nuclear Information System (INIS)

    Wheatley, S.J.

    1979-01-01

    The invention relates to an improvement in a conventional double-disc gate valve having a vertically movable gate assembly including a wedge, spreaders slidably engaged therewith, a valve disc carried by the spreaders. When the gate assembly is lowered to a selected point in the valve casing, the valve discs are moved transversely outward to close inlet and outlet ports in the casing. The valve includes hold-down means for guiding the disc-and-spreader assemblies as they are moved transversely outward and inward. If such valves are operated at relatively high differential pressures, they sometimes jam during opening. Such jamming has been a problem for many years in gate valves used in gaseous diffusion plants for the separation of uranium isotopes. The invention is based on the finding that the above-mentioned jamming results when the outlet disc tilts about its horizontal axis in a certain way during opening of the valve. In accordance with the invention, tilting of the outlet disc is maintained at a tolerable value by providing the disc with a rigid downwardly extending member and by providing the casing with a stop for limiting inward arcuate movement of the member to a preselected value during opening of the valve

  14. Bill Gates eyes healthcare market.

    Science.gov (United States)

    Dunbar, C

    1995-02-01

    The entrepreneurial spirit is still top in Bill Gates' mind as he look toward healthcare and other growth industries. Microsoft's CEO has not intention of going the way of other large technology companies that became obsolete before they could compete today.

  15. Dry dock gate stability modelling

    Science.gov (United States)

    Oktoberty; Widiyanto; Sasono, E. J.; Pramono, S.; Wandono, A. T.

    2018-03-01

    The development of marine transportation needs in Indonesia increasingly opens national shipyard business opportunities to provide shipbuilding services to the shipbuilding vessels. That emphasizes the stability of prime. The ship's decking door becomes an integral part of the efficient place and the specification of the use of the asset of its operational ease. This study aims to test the stability of Dry Dock gate with the length of 35.4 meters using Maxsurf and Hydromax in analyzing the calculation were in its assessment using interval per 500 mm length so that it can get detail data toward longitudinal and transverse such as studying Ship planning in general. The test result shows dry dock gate meets IMO standard with ballast construction containing 54% and 68% and using fix ballast can produce GMt 1,924 m, tide height 11,357m. The GMt value indicates dry dick gate can be stable and firmly erect at the base of the mouth dry dock. When empty ballast produces GMt 0.996 which means dry dock date is stable, but can easily be torn down. The condition can be used during dry dock gate treatment.

  16. Detection of myocardial viability by means of Single Proton Emission Computed Tomography (Perfused SPECT) dual 201 Tl (rest of 15 minutes, 24 late hours and 24 hours reinjection) and gated-SPECT 99m Tc-SESTAMIBI in effort or stimulation of the coronary reserves

    International Nuclear Information System (INIS)

    Mendoza V, R.

    2004-01-01

    The objective of this work was to determine if the images of SPECT 201 TI in rest of 15 minutes, 24 late hours and Gated-SPECT 99m Tc-SESTAMIBI in effort or stimulation of coronary reservation correlate with the study of 24 hours post reinjection of 201 TI to determine the presence of having knitted viable myocardium. Material and methods: 29 patients were studied with coronary arterial illness (EAC) to who are carried out SPECT 201 TI in rest with images of 15 minutes, 24 late hours and 24 hours reinjection, by means of the administration of 201 TI to dose of 130 MBq and reinjection with 37 MBq. and Gated-SPECT 99m Tc-SESTAMIBI in effort or stimulation of coronary reservation, later to the administration of 1110 MBq. Results: 29 patients were included according to inclusion approaches and exclusion, of those which 22 (75.86%) they correspond at the masculine sex and 7 (24.13%) to the feminine one, with an average of 62.1 year-old age, 2320 segments myocardial were analysed so much it is phase post-effort as rest; they were diagnosed a total of 264 segments with heart attack, of which viability myocardium was observed in 174 segments. The statistical tests are analysis of frequencies. The non parametric test of Wilcoxon and Mann-Whitney. Conclusions: the viability myocardial at the 24 late hours and 24 hours reinjection was similar; significant difference exists between the study of 15 minutes and 24 hours reinjection, ischemic illness was also demonstrated in territories different to the heart attack area in the studies of 15 minutes, late 24 hours and 24 hours reinjection. (Author)

  17. Simultaneous ECG-gated PET imaging of multiple mice

    International Nuclear Information System (INIS)

    Seidel, Jurgen; Bernardo, Marcelino L.; Wong, Karen J.; Xu, Biying; Williams, Mark R.; Kuo, Frank; Jagoda, Elaine M.; Basuli, Falguni; Li, Changhui; Griffiths, Gary L.

    2014-01-01

    Introduction: We describe and illustrate a method for creating ECG-gated PET images of the heart for each of several mice imaged at the same time. The method is intended to increase “throughput” in PET research studies of cardiac dynamics or to obtain information derived from such studies, e.g. tracer concentration in end-diastolic left ventricular blood. Methods: An imaging bed with provisions for warming, anesthetic delivery, etc., was fabricated by 3D printing to allow simultaneous PET imaging of two side-by-side mice. After electrode attachment, tracer injection and placement of the animals in the scanner field of view, ECG signals from each animal were continuously analyzed and independent trigger markers generated whenever an R-wave was detected in each signal. PET image data were acquired in “list” mode and these trigger markers were inserted into this list along with the image data. Since each mouse is in a different spatial location in the FOV, sorting of these data using trigger markers first from one animal and then the other yields two independent and correctly formed ECG-gated image sequences that reflect the dynamical properties of the heart during an “average” cardiac cycle. Results: The described method yields two independent ECG-gated image sequences that exhibit the expected properties in each animal, e.g. variation of the ventricular cavity volumes from maximum to minimum and back during the cardiac cycle in the processed animal with little or no variation in these volumes during the cardiac cycle in the unprocessed animal. Conclusion: ECG-gated image sequences for each of several animals can be created from a single list mode data collection using the described method. In principle, this method can be extended to more than two mice (or other animals) and to other forms of physiological gating, e.g. respiratory gating, when several subjects are imaged at the same time

  18. Quantitative analysis of a fault tree with priority AND gates

    International Nuclear Information System (INIS)

    Yuge, T.; Yanagi, S.

    2008-01-01

    A method for calculating the exact top event probability of a fault tree with priority AND gates and repeated basic events is proposed when the minimal cut sets are given. A priority AND gate is an AND gate where the input events must occur in a prescribed order for the occurrence of the output event. It is known that the top event probability of such a dynamic fault tree is obtained by converting the tree into an equivalent Markov model. However, this method is not realistic for a complex system model because the number of states which should be considered in the Markov analysis increases explosively as the number of basic events increases. To overcome the shortcomings of the Markov model, we propose an alternative method to obtain the top event probability in this paper. We assume that the basic events occur independently, exponentially distributed, and the component whose failure corresponds to the occurrence of the basic event is non-repairable. First, we obtain the probability of occurrence of the output event of a single priority AND gate by Markov analysis. Then, the top event probability is given by a cut set approach and the inclusion-exclusion formula. An efficient procedure to obtain the probabilities corresponding to logical products in the inclusion-exclusion formula is proposed. The logical product which is composed of two or more priority AND gates having at least one common basic event as their inputs is transformed into the sum of disjoint events which are equivalent to a priority AND gate in the procedure. Numerical examples show that our method works well for complex systems

  19. HE GATES OF HORN AND IVORY: A GEOGRAPHICAL MYTH

    Directory of Open Access Journals (Sweden)

    Jörg Schulte

    2016-12-01

    Full Text Available The articles proposes a new interpretation of the Homeric myth of the gates of horn and ivory that occurs in Book 19 of the Odyssey. It first argues that horn (the material of the southern gate in neoplatonic commentaries can be found in the sign of Capricornus. More complex is the argument that also ivory (the material of the northern gate in neoplatonic commentaries is derived from astronomical myths: the myths discussed are the myth of Adonis (beginning with the story about the ivory statue carved by Pygmalion, the myths of the Erymanthian, Studia Litterarum. Vol. 1, no 3–4 Jörg Schulte 83 the Calydonian, and the Ephesian boars, the myth of Orion, and the myth of the constellation ursa major. An enquiry into the occurance of ivory in Greek mythology leads to the hypothesis that the constellation ursa major was identified with a boar (with ivory tusks. The hypothesis implies that the gates of horn and ivory were already at the times of Homer understood as an astronomical myth that described the northernmost and southernmost points of the sky.

  20. Quantum walks, quantum gates, and quantum computers

    International Nuclear Information System (INIS)

    Hines, Andrew P.; Stamp, P. C. E.

    2007-01-01

    The physics of quantum walks on graphs is formulated in Hamiltonian language, both for simple quantum walks and for composite walks, where extra discrete degrees of freedom live at each node of the graph. It is shown how to map between quantum walk Hamiltonians and Hamiltonians for qubit systems and quantum circuits; this is done for both single-excitation and multiexcitation encodings. Specific examples of spin chains, as well as static and dynamic systems of qubits, are mapped to quantum walks, and walks on hyperlattices and hypercubes are mapped to various gate systems. We also show how to map a quantum circuit performing the quantum Fourier transform, the key element of Shor's algorithm, to a quantum walk system doing the same. The results herein are an essential preliminary to a Hamiltonian formulation of quantum walks in which coupling to a dynamic quantum environment is included