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Sample records for single material gate

  1. A compact model for single material double work function gate MOSFET

    Science.gov (United States)

    Changyong, Zheng; Wei, Zhang; Tailong, Xu; Yuehua, Dai; Junning, Chen

    2013-09-01

    An analytical surface potential model for the single material double work function gate (SMDWG) MOSFET is developed based on the exact resultant solution of the two-dimensional Poisson equation. The model includes the effects of drain biases, gate oxide thickness, different combinations of S-gate and D-gate length and values of substrate doping concentration. More attention has been paid to seeking to explain the attributes of the SMDWG MOSFET, such as suppressing drain-induced barrier lowering (DIBL), accelerating carrier drift velocity and device speed. The model is verified by comparison to the simulated results using the device simulator MEDICI. The accuracy of the results obtained using our analytical model is verified using numerical simulations. The model not only offers the physical insight into device physics but also provides the basic designing guideline for the device.

  2. High permittivity gate dielectric materials

    CERN Document Server

    2013-01-01

    "The book comprehensively covers all the current and the emerging areas of the physics and the technology of high permittivity gate dielectric materials, including, topics such as MOSFET basics and characteristics, hafnium-based gate dielectric materials, Hf-based gate dielectric processing, metal gate electrodes, flat-band and threshold voltage tuning, channel mobility, high-k gate stack degradation and reliability, lanthanide-based high-k gate stack materials, ternary hafnia and lanthania based high-k gate stack films, crystalline high-k oxides, high mobility substrates, and parameter extraction. Each chapter begins with the basics necessary for understanding the topic, followed by a comprehensive review of the literature, and ultimately graduating to the current status of the technology and our scientific understanding and the future prospects."

  3. Materials Fundamentals of Gate Dielectrics

    CERN Document Server

    Demkov, Alexander A

    2006-01-01

    This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discont...

  4. A New Analytical Subthreshold Behavior Model for Single-Halo, Dual-Material Gate Silicon-on-Insulator Metal Oxide Semiconductor Field Effect Transistor

    Science.gov (United States)

    Chiang, Te-Kuang

    2008-11-01

    On the basis of the exact solution of the two-dimensional Poisson equation, a new analytical subthreshold behavior model consisting of the two-dimensional potential, threshold voltage, and subthreshold current for the single-halo, dual-material gate (SHDMG) silicon-on-insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET) is developed. The model is verified by the good agreement with a numerical simulation using the device simulator MEDICI. The model not only offers a physical insight into device physics but is also an efficient device model for the circuit simulation.

  5. Single electron transistor with P-type sidewall spacer gates.

    Science.gov (United States)

    Lee, Jung Han; Li, Dong Hua; Lee, Joung-Eob; Kang, Kwon-Chil; Kim, Kyungwan; Park, Byung-Gook

    2011-07-01

    A single-electron transistor (SET) is one of the promising solutions to overcome the scaling limit of the Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET). Up to now, various kinds of SETs are being proposed and SETs with a dual gate (DG) structure using an electrical potential barrier have been demonstrated for room temperature operation. To operate DG-SETs, however, extra bias of side gates is necessary. It causes new problems that the electrode for side gates and the extra bias for electrical barrier increase the complexity in circuit design and operation power consumption, respectively. For the reason, a new mechanism using work function (WF) difference is applied to operate a SET at room temperature by three electrodes. Its structure consists of an undoped active region, a control gate, n-doped source/drain electrodes, and metal/silicide or p-type silicon side gates, and a SET with metal/silicide gates or p-type silicon gates forms tunnel barriers induced by work function between an undoped channel and grounded side gates. Via simulation, the effectiveness of the new mechanism is confirmed through various silicide materials that have different WF values. Furthermore, by considering the realistic conditions of the fabrication process, SET with p-type sidewall spacer gates was designed, and its brief fabrication process was introduced. The characteristics of its electrical barrier and the controllability of its control gate were also confirmed via simulation. Finally, a single-hole transistor with n-type sidewall spacer gates was designed.

  6. Electrochemical Single-Molecule Transistors with Optimized Gate Coupling

    DEFF Research Database (Denmark)

    Osorio, Henrry M.; Catarelli, Samantha; Cea, Pilar

    2015-01-01

    . These data are rationalized in terms of a two-step electrochemical model for charge transport across the redox bridge. In this model the gate coupling in the ionic liquid is found to be fully effective with a modeled gate coupling parameter, ξ, of unity. This compares to a much lower gate coupling parameter......Electrochemical gating at the single molecule level of viologen molecular bridges in ionic liquids is examined. Contrary to previous data recorded in aqueous electrolytes, a clear and sharp peak in the single molecule conductance versus electrochemical potential data is obtained in ionic liquids...

  7. Single-atom gating and magnetic interactions in quantum corrals

    Energy Technology Data Exchange (ETDEWEB)

    Ngo, Anh T.; Kim, Eugene H.; Ulloa, Sergio E.

    2017-04-01

    Single-atom gating, achieved by manipulation of adatoms on a surface, has been shown in experiments to allow precise control over superposition of electronic states in quantum corrals. Using a Green's function approach, we demonstrate theoretically that such atom gating can also be used to control the coupling between magnetic degrees of freedom in these systems. Atomic gating enables control not only on the direct interaction between magnetic adatoms, but also over superpositions of many-body states which can then control long distance interactions. We illustrate this effect by considering the competition between direct exchange between magnetic impurities and the Kondo screening mediated by the host electrons, and how this is affected by gating. These results suggest that both magnetic and nonmagnetic single-atom gating may be used to investigate magnetic impurity systems with tailored interactions, and may allow the control of entanglement of different spin states.

  8. Universal quantum gates for Single Cooper Pair Box based quantum computing

    Science.gov (United States)

    Echternach, P.; Williams, C. P.; Dultz, S. C.; Braunstein, S.; Dowling, J. P.

    2000-01-01

    We describe a method for achieving arbitrary 1-qubit gates and controlled-NOT gates within the context of the Single Cooper Pair Box (SCB) approach to quantum computing. Such gates are sufficient to support universal quantum computation.

  9. Designing single-qutrit quantum gates via tripod adiabatic passage

    Directory of Open Access Journals (Sweden)

    M. Amniat-Talab

    2014-04-01

    Full Text Available In this paper, we use stimulated Raman adiabatic passage technique to implement single-qutrit quantum gates in tripod systems. It is shown by using the Morris-Shore (MS transformation, the six-state problem with 5 pulsed fields can be reduced to a basis that decouples two states from the others. This imposes three pulses not connected to the initial condition with have the same shape. Using this method, the six-state penta-pod system is reduced to a tripod system. We can design single-qutrit quantum gates by ignoring the fragile dynamical phase, and by suitable design of Rabi frequencies of the effective Hamiltonian

  10. Electrochemically-gated single-molecule electrical devices

    International Nuclear Information System (INIS)

    Guo, Shaoyin; Artés, Juan Manuel; Díez-Pérez, Ismael

    2013-01-01

    In the last decade, single-molecule electrical contacts have emerged as a new experimental platform that allows exploring charge transport phenomena in individual molecular blocks. This novel tool has evolved into an essential element within the Molecular Electronics field to understand charge transport processes in hybrid (bio)molecule/electrode interfaces at the nanoscale, and prospect the implementation of active molecular components into functional nanoscale optoelectronic devices. Within this area, three-terminal single-molecule devices have been sought, provided that they are highly desired to achieve full functionality in logic electronic circuits. Despite the latest experimental developments offer consistent methods to bridge a molecule between two electrodes (source and drain in a transistor notation), placing a third electrode (gate) close to the single-molecule electrical contact is still technically challenging. In this vein, electrochemically-gated single-molecule devices have emerged as an experimentally affordable alternative to overcome these technical limitations. In this review, the operating principle of an electrochemically-gated single-molecule device is presented together with the latest experimental methodologies to built them and characterize their charge transport characteristics. Then, an up-to-date comprehensive overview of the most prominent examples will be given, emphasizing on the relationship between the molecular structure and the final device electrical behaviour

  11. Spin-gating of a conventional aluminum single electron transistor

    Science.gov (United States)

    Zarbo, Liviu P.; Ciccarelli, Chiara; Irvine, Andy; Wunderlich, Jörg; Champion, Richard; Gallagher, Brian; Jungwirth, Tomáš; Ferguson, Andrew

    2012-02-01

    We report the realization of a single electron transistor in which electron transport from an aluminum source electrode to an aluminum drain electrode via an aluminum island is controlled by spins in a capacitively coupled magnetic gate electrode. The origin of the effect is in the change of the chemical potential on the gate, formed by the ferromagnetic semiconductor GaMnAs, with changing the direction of the magnetization. In agreement with experimental observations, microscopically calculated anisotropies of the chemical potential with respect to the magnetization orientation are of the order of 10μV which is comparable to the electrical gate voltages required to control the on and off state of the single electron transistor. Our phenomenon belongs to the family of anisotropic magnetoresistance effects which can be observed in ohmic, tunneling or other device geometries. In our case, the entire phenomenon is coded in the dependence of the chemical potential on the spin orientation which allowed us to remove the spin functionality from all current contacts and channels and place it in the capacitively coupled gate electrode. Our spintronic device therefore operates without spin current.

  12. A single nano cantilever as a reprogrammable universal logic gate

    International Nuclear Information System (INIS)

    Chappanda, K N; Ilyas, S; Kazmi, S N R; Younis, M I; Holguin-Lerma, J; Batra, N M; Costa, P M F J

    2017-01-01

    The current transistor-based computing circuits use multiple interconnected transistors to realize a single Boolean logic gate. This leads to higher power requirements and delayed computing. Transistors are not suitable for applications in harsh environments and require complicated thermal management systems due to excessive heat dissipation. Also, transistor circuits lack the ability to dynamically reconfigure their functionality in real time, which is desirable for enhanced computing capability. Further, the miniaturization of transistors to improve computational power is reaching its ultimate physical limits. As a step towards overcoming the limitations of transistor-based computing, here we demonstrate a reprogrammable universal Boolean logic gate based on a nanoelectromechanical cantilever (NC) oscillator. The fundamental XOR, AND, NOR, OR and NOT logic gates are condensed in a single NC, thereby reducing electrical interconnects between devices. The device is dynamically switchable between any logic gates at the same drive frequency without the need for any change in the circuit. It is demonstrated to operate at elevated temperatures minimizing the need for thermal management systems. It has a tunable bandwidth of 5 MHz enabling parallel and dynamically reconfigurable logic device for enhanced computing. (paper)

  13. A single nano cantilever as a reprogrammable universal logic gate

    KAUST Repository

    Chappanda, K. N.

    2017-02-24

    The current transistor-based computing circuits use multiple interconnected transistors to realize a single Boolean logic gate. This leads to higher power requirements and delayed computing. Transistors are not suitable for applications in harsh environments and require complicated thermal management systems due to excessive heat dissipation. Also, transistor circuits lack the ability to dynamically reconfigure their functionality in real time, which is desirable for enhanced computing capability. Further, the miniaturization of transistors to improve computational power is reaching its ultimate physical limits. As a step towards overcoming the limitations of transistor-based computing, here we demonstrate a reprogrammable universal Boolean logic gate based on a nanoelectromechanical cantilever (NC) oscillator. The fundamental XOR, AND, NOR, OR and NOT logic gates are condensed in a single NC, thereby reducing electrical interconnects between devices. The device is dynamically switchable between any logic gates at the same drive frequency without the need for any change in the circuit. It is demonstrated to operate at elevated temperatures minimizing the need for thermal management systems. It has a tunable bandwidth of 5 MHz enabling parallel and dynamically reconfigurable logic device for enhanced computing.

  14. Gated single photon emission computer tomography for the detection of silent myocardial ischemia

    International Nuclear Information System (INIS)

    Pena Q, Yamile; Coca P, Marco Antonio; Batista C, Juan Felipe; Fernandez-Britto, Jose; Quesada P, Rodobaldo; Pena C; Andria

    2009-01-01

    Background: Asymptomatic patients with severe coronary atherosclerosis may have a normal resting electrocardiogram and stress test. Aim: To assess the yield of Gated Single Photon Emission Computer Tomography (SPECT) for the screening of silent myocardial ischemia in type 2 diabetic patients. Material and methods: Electrocardiogram, stress test and gated-SPECT were performed on 102 type 2 diabetic patients aged 60 ± 8 years without cardiovascular symptoms. All subjects were also subjected to a coronary angiography, whose results were used as gold standard. Results: Gated-SPECT showed myocardial ischemia on 26.5% of studied patients. The sensibility, specificity, accuracy, positive predictive value and negative predictive value were 92.3%, 96%, 95%, 88.8%, 97.3%, respectively. In four and six patients ischemia was detected on resting electrocardiogram and stress test, respectively. Eighty percent of patients with doubtful resting electrocardiogram results and 70% with a doubtful stress test had a silent myocardial ischemia detected by gated-SPECT. There was a good agreement between the results of gated-SPECT and coronary angiography (k =0.873). Conclusions: Gated-SPECT was an useful tool for the screening of silent myocardial ischemia

  15. Analyses of Short Channel Effects of Single-Gate and Double-Gate Graphene Nanoribbon Field Effect Transistors

    Directory of Open Access Journals (Sweden)

    Hojjatollah Sarvari

    2016-01-01

    Full Text Available Short channel effects of single-gate and double-gate graphene nanoribbon field effect transistors (GNRFETs are studied based on the atomistic pz orbital model for the Hamiltonian of graphene nanoribbon using the nonequilibrium Green’s function formalism. A tight-binding Hamiltonian with an atomistic pz orbital basis set is used to describe the atomistic details in the channel of the GNRFETs. We have investigated the vital short channel effect parameters such as Ion and Ioff, the threshold voltage, the subthreshold swing, and the drain induced barrier lowering versus the channel length and oxide thickness of the GNRFETs in detail. The gate capacitance and the transconductance of both devices are also computed in order to calculate the intrinsic cut-off frequency and switching delay of GNRFETs. Furthermore, the effects of doping of the channel on the threshold voltage and the frequency response of the double-gate GNRFET are discussed. We have shown that the single-gate GNRFET suffers more from short channel effects if compared with those of the double-gate structure; however, both devices have nearly the same cut-off frequency in the range of terahertz. This work provides a collection of data comparing different features of short channel effects of the single gate with those of the double gate GNRFETs. The results give a very good insight into the devices and are very useful for their digital applications.

  16. Inversion gate capacitance of undoped single-gate and double-gate field-effect transistor geometries in the extreme quantum limit

    Energy Technology Data Exchange (ETDEWEB)

    Majumdar, Amlan, E-mail: amajumd@us.ibm.com [IBM Research Division, T. J. Watson Research Center, Yorktown Heights, New York 10598 (United States)

    2015-05-28

    We present first-principle analytical derivations and numerically modeled data to show that the gate capacitance per unit gate area C{sub G} of extremely thin undoped-channel single-gate and double-gate field-effect transistor geometries in the extreme quantum limit with single-subband occupancy can be written as 1/C{sub G} = 1/C{sub OX} + N{sub G}/C{sub DOS} + N{sub G}/ηC{sub WF}, where N{sub G} is the number of gates, C{sub OX} is the oxide capacitance per unit area, C{sub DOS} is the density-of-states capacitance per unit area, C{sub WF} is the wave function spreading capacitance per unit area, and η is a constant on the order of 1.

  17. Experimental study of single event burnout and single event gate rupture in power MOSFETs and IGBT

    International Nuclear Information System (INIS)

    Tang Benqi; Wang Yanping; Geng Bin

    2001-01-01

    An experimental study was carried out to determine the single event burnout and single event gate rupture sensitivities in power MOSFETs and IGBT which were exposed to heavy ions from 252 Cf source. The test method, test results, a description of observed burnout current waveforms and a discussion of a possible failure mechanism were presented. Current measurements have been performed with a specially designed circuit. The test results include the observed dependence upon applied drain or gate to source bias and versus with external capacitors and limited resistors

  18. STIR: Novel Electronic States by Gating Strongly Correlated Materials

    Science.gov (United States)

    2016-03-01

    TITLE AND SUBTITLE 13. SUPPLEMENTARY NOTES 12. DISTRIBUTION AVAILIBILITY STATEMENT 6. AUTHORS 7. PERFORMING ORGANIZATION NAMES AND ADDRESSES 15...REPORT DOCUMENTATION PAGE 11. SPONSOR/MONITOR’S REPORT NUMBER(S) 10. SPONSOR/MONITOR’S ACRONYM(S) ARO 8. PERFORMING ORGANIZATION REPORT NUMBER...channel limits induced electron density changes to approximately 1013 cm-2. This is sufficient to gate semiconducting materials, where the electronic

  19. Free energy dissipation of the spontaneous gating of a single voltage-gated potassium channel

    Science.gov (United States)

    Wang, Jia-Zeng; Wang, Rui-Zhen

    2018-02-01

    Potassium channels mainly contribute to the resting potential and re-polarizations, with the potassium electrochemical gradient being maintained by the pump Na+/K+-ATPase. In this paper, we construct a stochastic model mimicking the kinetics of a potassium channel, which integrates temporal evolving of the membrane voltage and the spontaneous gating of the channel. Its stationary probability density functions (PDFs) are found to be singular at the boundaries, which result from the fact that the evolving rates of voltage are greater than the gating rates of the channel. We apply PDFs to calculate the power dissipations of the potassium current, the leakage, and the gating currents. On a physical perspective, the essential role of the system is the K+-battery charging the leakage (L-)battery. A part of power will inevitably be dissipated among the process. So, the efficiency of energy transference is calculated.

  20. An Updated Perspective of Single Event Gate Rupture and Single Event Burnout in Power MOSFETs

    Science.gov (United States)

    Titus, Jeffrey L.

    2013-06-01

    Studies over the past 25 years have shown that heavy ions can trigger catastrophic failure modes in power MOSFETs [e.g., single-event gate rupture (SEGR) and single-event burnout (SEB)]. In 1996, two papers were published in a special issue of the IEEE Transaction on Nuclear Science [Johnson, Palau, Dachs, Galloway and Schrimpf, “A Review of the Techniques Used for Modeling Single-Event Effects in Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 546-560, April. 1996], [Titus and Wheatley, “Experimental Studies of Single-Event Gate Rupture and Burnout in Vertical Power MOSFETs,” IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 533-545, Apr. 1996]. Those two papers continue to provide excellent information and references with regard to SEB and SEGR in vertical planar MOSFETs. This paper provides updated references/information and provides an updated perspective of SEB and SEGR in vertical planar MOSFETs as well as provides references/information to other device types that exhibit SEB and SEGR effects.

  1. The thinnest molecular separation sheet by graphene gates of single-walled carbon nanohorns.

    Science.gov (United States)

    Ohba, Tomonori

    2014-11-25

    Graphene is possibly the thinnest membrane that could be used as a molecular separation gate. Several techniques including absorption, cryogenic distillation, adsorption, and membrane separation have been adopted for constructing separation systems. Molecular separation using graphene as the membrane has been studied because large area synthesis of graphene is possible by chemical vapor deposition. Control of the gate sizes is necessary to achieve high separation performances in graphene membranes. The separation of molecules and ions using graphene and graphene oxide layers could be achieved by the intrinsic defects and defect donation of graphene. However, the controllability of the graphene gates is still under debate because gate size control at the picometer level is inevitable for the fabrication of the thinnest graphene membranes. In this paper, the controlled gate size in the graphene sheets in single-walled carbon nanohorns (NHs) is studied and the molecular separation ability of the graphene sheets is assessed by molecular probing with CO2, O2, N2, CH4, and SF6. Graphene sheets in NHs with different sized gates of 310, 370, and >500 pm were prepared and assessed by molecular probing. The 310 pm-gates in the graphene sheets could separate the molecules tested, whereas weak separation properties were observed for 370 pm-gates. The amount of CO2 that penetrated the 310 pm-gates was more than 35 times larger than that of CH4. These results were supported by molecular dynamics simulations of the penetration of molecules through 300, 400, and 700 pm-gates in graphene sheets. Therefore, a gas separation membrane using a 340-pm-thick graphene sheet has high potential. These findings provide unambiguous evidence of the importance of graphene gates on the picometer level. Control of the gates is the primary challenge for high-performance separation membranes made of graphene.

  2. Lattice Vibration of Layered GaTe Single Crystals

    Directory of Open Access Journals (Sweden)

    Tao Wang

    2018-02-01

    Full Text Available The effect of interlayer interaction on in-layer structure of laminar GaTe crystals was studied according to the lattice vibration using micro-Raman analysis. The results were also confirmed by the first principle calculations. Accordingly, the relationship between lattice vibration and crystal structure was established. Ten peaks were observed in the micro-Raman spectra from 100 cm−1 to 300 cm−1. Eight of them fit Raman-active vibration modes and the corresponding displacement vectors were calculated, which proved that the two modes situated at 128.7 cm−1 and 145.7 cm−1 were related to the lattice vibration of GaTe, instead of impurities or defects. Davydov splitting in GaTe was identified and confirmed by the existence of the other two modes, conjugate modes, at 110.7 cm−1 (∆ω = 33.1 cm−1 and 172.5 cm−1 (∆ω = 49.5 cm−1, indicates that the weak interlayer coupling has a significant effect on lattice vibrations in the two-layer monoclinic unit cell. Our results further proved the existence of two layers in each GaTe unit cell.

  3. Single-electron thermal devices coupled to a mesoscopic gate

    Science.gov (United States)

    Sánchez, Rafael; Thierschmann, Holger; Molenkamp, Laurens W.

    2017-11-01

    We theoretically investigate the propagation of heat currents in a three-terminal quantum dot engine. Electron–electron interactions introduce state-dependent processes which can be resolved by energy-dependent tunneling rates. We identify the relevant transitions which define the operation of the system as a thermal transistor or a thermal diode. In the former case, thermal-induced charge fluctuations in the gate dot modify the thermal currents in the conductor with suppressed heat injection, resulting in huge amplification factors and the possible gating with arbitrarily low energy cost. In the latter case, enhanced correlations of the state-selective tunneling transitions redistribute heat flows giving high rectification coefficients and the unexpected cooling of one conductor terminal by heating the other one. We propose quantum dot arrays as a possible way to achieve the extreme tunneling asymmetries required for the different operations.

  4. Single-electron-occupation metal-oxide-semiconductor quantum dots formed from efficient poly-silicon gate layout

    Energy Technology Data Exchange (ETDEWEB)

    Carroll, Malcolm S.; rochette, sophie; Rudolph, Martin; Roy, A. -M.; Curry, Matthew Jon; Ten Eyck, Gregory A.; Manginell, Ronald P.; Wendt, Joel R.; Pluym, Tammy; Carr, Stephen M; Ward, Daniel Robert; Lilly, Michael; pioro-ladriere, michel

    2017-07-01

    We introduce a silicon metal-oxide-semiconductor quantum dot structure that achieves dot-reservoir tunnel coupling control without a dedicated barrier gate. The elementary structure consists of two accumulation gates separated spatially by a gap, one gate accumulating a reservoir and the other a quantum dot. Control of the tunnel rate between the dot and the reservoir across the gap is demonstrated in the single electron regime by varying the reservoir accumulation gate voltage while compensating with the dot accumulation gate voltage. The method is then applied to a quantum dot connected in series to source and drain reservoirs, enabling transport down to the single electron regime. Finally, tuning of the valley splitting with the dot accumulation gate voltage is observed. This split accumulation gate structure creates silicon quantum dots of similar characteristics to other realizations but with less electrodes, in a single gate stack subtractive fabrication process that is fully compatible with silicon foundry manufacturing.

  5. Coulomb blockade in a Si channel gated by an Al single-electron transistor

    OpenAIRE

    Sun, L.; Brown, K. R.; Kane, B. E.

    2007-01-01

    We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated with Coulomb blockade in the channel, revealing the formation of a Si single-electron transistor. Abrupt steps present in sweeps of the Al transistor conductance versus gate voltage are correlated with single-electron charging events in the Si t...

  6. Investigation of the Novel Attributes of a Dual Material Gate Nanoscale Tunnel Field Effect Transistor

    OpenAIRE

    Saurabh, Sneh; Kumar, M. Jagadesh

    2011-01-01

    In this paper, we propose the application of a Dual Material Gate (DMG) in a Tunnel Field Effect Transistor (TFET) to simultaneously optimize the on-current, the off-current and the threshold voltage, and also improve the average subthreshold slope, the nature of the output characteristics and the immunity against the DIBL effects. We demonstrate that if appropriate work-functions are chosen for the gate materials on the source side and the drain side, the tunnel field effect transistor shows...

  7. Ultraclean single, double, and triple carbon nanotube quantum dots with recessed Re bottom gates

    Science.gov (United States)

    Jung, Minkyung; Schindele, Jens; Nau, Stefan; Weiss, Markus; Baumgartner, Andreas; Schoenenberger, Christian

    2014-03-01

    Ultraclean carbon nanotubes (CNTs) that are free from disorder provide a promising platform to manipulate single electron or hole spins for quantum information. Here, we demonstrate that ultraclean single, double, and triple quantum dots (QDs) can be formed reliably in a CNT by a straightforward fabrication technique. The QDs are electrostatically defined in the CNT by closely spaced metallic bottom gates deposited in trenches in Silicon dioxide by sputter deposition of Re. The carbon nanotubes are then grown by chemical vapor deposition (CVD) across the trenches and contacted using conventional electron beam lithography. The devices exhibit reproducibly the characteristics of ultraclean QDs behavior even after the subsequent electron beam lithography and chemical processing steps. We demonstrate the high quality using CNT devices with two narrow bottom gates and one global back gate. Tunable by the gate voltages, the device can be operated in four different regimes: i) fully p-type with ballistic transport between the outermost contacts (over a length of 700 nm), ii) clean n-type single QD behavior where a QD can be induced by either the left or the right bottom gate, iii) n-type double QD and iv) triple bipolar QD where the middle QD has opposite doping (p-type). Research at Basel is supported by the NCCR-Nano, NCCR-QIST, ERC project QUEST, and FP7 project SE2ND.

  8. Area efficient digital logic NOT gate using single electron box (SEB

    Directory of Open Access Journals (Sweden)

    Bahrepour Davoud

    2017-01-01

    Full Text Available The continuing scaling down of complementary metal oxide semiconductor (CMOS has led researchers to build new devices with nano dimensions, whose behavior will be interpreted based on quantum mechanics. Single-electron devices (SEDs are promising candidates for future VLSI applications, due to their ultra small dimensions and lower power consumption. In most SED based digital logic designs, a single gate is introduced and its performance discussed. While in the SED based circuits the fan out of designed gate circuit should be considered and measured. In the other words, cascaded SED based designs must work properly so that the next stage(s should be driven by the previous stage. In this paper, previously NOT gate based on single electron box (SEB which is an important structure in SED technology, is reviewed in order to obtain correct operation in series connections. The correct operation of the NOT gate is investigated in a buffer circuit which uses two connected NOT gate in series. Then, for achieving better performance the designed buffer circuit is improved by the use of scaling process.

  9. Gated blood pool studies with a single probe - clinical validity

    International Nuclear Information System (INIS)

    Loesel, E.; Hoffmann, G.

    1981-01-01

    The global volume alterations of the heart can be estimated non-invasively by means of the radiocardiographic function analysis developed by Hoffmann and Kleine. Since the failing heart with its functional disturbances demonstrates a pathological volume behaviour under physical exercise, it is possible to use these characteristics to differentiate between the intact heart and the failing heart by registration of the global volume alterations. The gated blood pool technique combined with the registration of the intraventricular pressure pulse by means of a Swan-Ganz flow-directed catheter enables demonstration of ventricular stroke work as a pressure-volume loop (work diagram). Its shape indicates whether the ventricle has to perform mainly pressure work or volume work. Myocardial failure is altering the basic conditions of the heart. The work diagram of the failing heart is significantly different from that of the intact human heart. It is shifted in its pressure-volume coordinates according to an increase of EDV and ESV and the rise of the filling pressure. Case demonstrations reveal the global volume behaviour of the heart under varying conditions: resting and physical exercise, drug influence on the intact and failing heart. (orig.) [de

  10. Single layer of Ge quantum dots in HfO2for floating gate memory capacitors.

    Science.gov (United States)

    Lepadatu, A M; Palade, C; Slav, A; Maraloiu, A V; Lazanu, S; Stoica, T; Logofatu, C; Teodorescu, V S; Ciurea, M L

    2017-04-28

    High performance trilayer memory capacitors with a floating gate of a single layer of Ge quantum dots (QDs) in HfO 2 were fabricated using magnetron sputtering followed by rapid thermal annealing (RTA). The layer sequence of the capacitors is gate HfO 2 /floating gate of single layer of Ge QDs in HfO 2 /tunnel HfO 2 /p-Si wafers. Both Ge and HfO 2 are nanostructured by RTA at moderate temperatures of 600-700 °C. By nanostructuring at 600 °C, the formation of a single layer of well separated Ge QDs with diameters of 2-3 nm at a density of 4-5 × 10 15 m -2 is achieved in the floating gate (intermediate layer). The Ge QDs inside the intermediate layer are arranged in a single layer and are separated from each other by HfO 2 nanocrystals (NCs) about 8 nm in diameter with a tetragonal/orthorhombic structure. The Ge QDs in the single layer are located at the crossing of the HfO 2 NCs boundaries. In the intermediate layer, besides Ge QDs, a part of the Ge atoms is segregated by RTA at the HfO 2 NCs boundaries, while another part of the Ge atoms is present inside the HfO 2 lattice stabilizing the tetragonal/orthorhombic structure. The fabricated capacitors show a memory window of 3.8 ± 0.5 V and a capacitance-time characteristic with 14% capacitance decay in the first 3000-4000 s followed by a very slow capacitance decrease extrapolated to 50% after 10 years. This high performance is mainly due to the floating gate of a single layer of well separated Ge QDs in HfO 2 , distanced from the Si substrate by the tunnel oxide layer with a precise thickness.

  11. Simulation of a quantum NOT gate for a single qutrit system

    Indian Academy of Sciences (India)

    level system; qutrit; three-level transitions; one-qutrit quantum gate. ... Because of the fact that the three-level atom defines a total normalized state composed of superposition of three different single-level states, it is assumed that such a system ...

  12. Single qubit gates in a 3D array of neutral atoms

    Science.gov (United States)

    Corcovilos, Theodore A.; Wang, Yang; Li, Xiao; Weiss, David S.; Kim, Jungsang

    2012-06-01

    We present an approach to quantum computing using single Cs atoms in a cubic 5-μm spaced 3D optical lattice. After cooling the atoms to near their vibrational ground state (76% ground state occupancy) using projection sideband cooling, we manipulate the state of individual atoms using the AC Stark shift induced by intersecting lasers and microwave pulses that are only resonant with the shifted atom. Here we demonstrate Rabi oscillations of a single atom in the center of the array and progress towards steering the beams to address the other atoms. Rapid steering of the lasers using micromirrors allows single-atom gates of ˜10 μs. This single-site addressing along with lattice polarization rotation will enable us to fill voids in the central region of the atom array by selectively moving individual atoms. Future work will couple adjacent qubits via the Rydberg blockade mechanism with expected two-qubit gate times of ˜100 ns.

  13. Break junction under electrochemical gating: testbed for single-molecule electronics.

    Science.gov (United States)

    Huang, Cancan; Rudnev, Alexander V; Hong, Wenjing; Wandlowski, Thomas

    2015-02-21

    Molecular electronics aims to construct functional molecular devices at the single-molecule scale. One of the major challenges is to construct a single-molecule junction and to further manipulate the charge transport through the molecular junction. Break junction techniques, including STM break junctions and mechanically controllable break junctions are considered as testbed to investigate and control the charge transport on a single-molecule scale. Moreover, additional electrochemical gating provides a unique opportunity to manipulate the energy alignment and molecular redox processes for a single-molecule junction. In this review, we start from the technical aspects of the break junction technique, then discuss the molecular structure-conductance correlation derived from break junction studies, and, finally, emphasize electrochemical gating as a promising method for the functional molecular devices.

  14. NEPP Update of Independent Single Event Upset Field Programmable Gate Array Testing

    Science.gov (United States)

    Berg, Melanie; Label, Kenneth; Campola, Michael; Pellish, Jonathan

    2017-01-01

    This presentation provides a NASA Electronic Parts and Packaging (NEPP) Program update of independent Single Event Upset (SEU) Field Programmable Gate Array (FPGA) testing including FPGA test guidelines, Microsemi RTG4 heavy-ion results, Xilinx Kintex-UltraScale heavy-ion results, Xilinx UltraScale+ single event effect (SEE) test plans, development of a new methodology for characterizing SEU system response, and NEPP involvement with FPGA security and trust.

  15. Single-Molecule Electrochemical Gating in Ionic Liquids

    DEFF Research Database (Denmark)

    Kay, Nicola J.; Higgins, Simon J.; Jeppesen, Jan O.

    2012-01-01

    The single-molecular conductance of a redox active molecular bridge has been studied in an electrochemical single-molecule transistor configuration in a room-temperature ionic liquid (RTIL). The redox active pyrrolo-tetrathiafulvalene (pTTF) moiety was attached to gold contacts at both ends through...... and decreases again as the second redox process is passed. This is described as an “off–on–off–on–off” conductance switching behavior. This molecular conductance vs electrochemical potential relation could be modeled well as a sequential two-step charge transfer process with full or partial vibrational...... relaxation. Using this view, reorganization energies of ∼1.2 eV have been estimated for both the first and second redox transitions for the pTTF bridge in the 1-butyl-3-methylimidazolium trifluoromethanesulfonate (BMIOTf) ionic liquid environment. By contrast, in aqueous environments, a much smaller...

  16. GATE Center of Excellence at UAB in Lightweight Materials for Automotive Applications

    Energy Technology Data Exchange (ETDEWEB)

    None

    2011-07-31

    This report summarizes the accomplishments of the UAB GATE Center of Excellence in Lightweight Materials for Automotive Applications. The first Phase of the UAB DOE GATE center spanned the period 2005-2011. The UAB GATE goals coordinated with the overall goals of DOE's FreedomCAR and Vehicles Technologies initiative and DOE GATE program. The FCVT goals are: (1) Development and validation of advanced materials and manufacturing technologies to significantly reduce automotive vehicle body and chassis weight without compromising other attributes such as safety, performance, recyclability, and cost; (2) To provide a new generation of engineers and scientists with knowledge and skills in advanced automotive technologies. The UAB GATE focused on both the FCVT and GATE goals in the following manner: (1) Train and produce graduates in lightweight automotive materials technologies; (2) Structure the engineering curricula to produce specialists in the automotive area; (3) Leverage automotive related industry in the State of Alabama; (4) Expose minority students to advanced technologies early in their career; (5) Develop innovative virtual classroom capabilities tied to real manufacturing operations; and (6) Integrate synergistic, multi-departmental activities to produce new product and manufacturing technologies for more damage tolerant, cost-effective, and lighter automotive structures.

  17. High-Dimensional Single-Photon Quantum Gates: Concepts and Experiments

    Science.gov (United States)

    Babazadeh, Amin; Erhard, Manuel; Wang, Feiran; Malik, Mehul; Nouroozi, Rahman; Krenn, Mario; Zeilinger, Anton

    2017-11-01

    Transformations on quantum states form a basic building block of every quantum information system. From photonic polarization to two-level atoms, complete sets of quantum gates for a variety of qubit systems are well known. For multilevel quantum systems beyond qubits, the situation is more challenging. The orbital angular momentum modes of photons comprise one such high-dimensional system for which generation and measurement techniques are well studied. However, arbitrary transformations for such quantum states are not known. Here we experimentally demonstrate a four-dimensional generalization of the Pauli X gate and all of its integer powers on single photons carrying orbital angular momentum. Together with the well-known Z gate, this forms the first complete set of high-dimensional quantum gates implemented experimentally. The concept of the X gate is based on independent access to quantum states with different parities and can thus be generalized to other photonic degrees of freedom and potentially also to other quantum systems.

  18. High-Dimensional Single-Photon Quantum Gates: Concepts and Experiments.

    Science.gov (United States)

    Babazadeh, Amin; Erhard, Manuel; Wang, Feiran; Malik, Mehul; Nouroozi, Rahman; Krenn, Mario; Zeilinger, Anton

    2017-11-03

    Transformations on quantum states form a basic building block of every quantum information system. From photonic polarization to two-level atoms, complete sets of quantum gates for a variety of qubit systems are well known. For multilevel quantum systems beyond qubits, the situation is more challenging. The orbital angular momentum modes of photons comprise one such high-dimensional system for which generation and measurement techniques are well studied. However, arbitrary transformations for such quantum states are not known. Here we experimentally demonstrate a four-dimensional generalization of the Pauli X gate and all of its integer powers on single photons carrying orbital angular momentum. Together with the well-known Z gate, this forms the first complete set of high-dimensional quantum gates implemented experimentally. The concept of the X gate is based on independent access to quantum states with different parities and can thus be generalized to other photonic degrees of freedom and potentially also to other quantum systems.

  19. Polysilsesquioxanes for Gate-Insulating Materials of Organic Thin-Film Transistors

    Directory of Open Access Journals (Sweden)

    Kimihiro Matsukawa

    2012-01-01

    Full Text Available Printable organic thin-film transistor (O-TFT is one of the most recognized technical issues nowadays. Our recent progress on the formation of organic-inorganic hybrid thin films consists of polymethylsilsesquioxane (PMSQ, and its applications for the gate-insulating layer of O-TFTs are introduced in this paper. PMSQ synthesized in toluene solution with formic acid catalyst exhibited the electric resistivity of higher than 1014 Ω cm after thermal treatment at 150°C, and the very low concentration of residual silanol groups in PMSQ was confirmed. The PMSQ film contains no mobile ionic impurities, and this is also important property for the practical use for the gate-insulating materials. In the case of top-contact type TFT using poly(3-hexylthiophene (P3HT with PMSQ gate-insulating layer, the device properties were comparable with the TFTs having thermally grown SiO2 gate-insulating layer. The feasibility of PMSQ as a gate-insulating material for O-TFTs, which was fabricated on a flexible plastic substrate, has been demonstrated. Moreover, by the modification of PMSQ, further functionalities, such as surface hydrophobicity, high permittivity that allows low driving voltage, and photocurability that allows photolithography, could be appended to the PMSQ gate-insulating layers.

  20. Optimized driving of superconducting artificial atoms for improved single-qubit gates

    Science.gov (United States)

    Chow, J. M.; Dicarlo, L.; Gambetta, J. M.; Motzoi, F.; Frunzio, L.; Girvin, S. M.; Schoelkopf, R. J.

    2010-10-01

    We employ simultaneous shaping of in-phase and out-of-phase resonant microwave drives to reduce single-qubit gate errors arising from the weak anharmonicity of transmon superconducting artificial atoms. To reduce the effect of higher levels present in the transmon spectrum, we apply Gaussian and derivative-of-Gaussian envelopes to the in-phase and out-of-phase quadratures, respectively, and optimize over their relative amplitude. Using randomized benchmarking, we obtain a minimum average error per gate of 0.007±0.005 using 4-ns-wide pulses, which is limited by decoherence. This simple optimization technique works for multiple transmons coupled to a single microwave resonator in a quantum bus architecture.

  1. Memory effect in silicon time-gated single-photon avalanche diodes

    Energy Technology Data Exchange (ETDEWEB)

    Dalla Mora, A.; Contini, D., E-mail: davide.contini@polimi.it; Di Sieno, L. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Tosi, A.; Boso, G.; Villa, F. [Dipartimento di Elettronica, Informazione e Bioingegneria, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); Pifferi, A. [Dipartimento di Fisica, Politecnico di Milano, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy); CNR, Istituto di Fotonica e Nanotecnologie, Piazza Leonardo da Vinci 32, I-20133 Milano (Italy)

    2015-03-21

    We present a comprehensive characterization of the memory effect arising in thin-junction silicon Single-Photon Avalanche Diodes (SPADs) when exposed to strong illumination. This partially unknown afterpulsing-like noise represents the main limiting factor when time-gated acquisitions are exploited to increase the measurement dynamic range of very fast (picosecond scale) and faint (single-photon) optical signals following a strong stray one. We report the dependences of this unwelcome signal-related noise on photon wavelength, detector temperature, and biasing conditions. Our results suggest that this so-called “memory effect” is generated in the deep regions of the detector, well below the depleted region, and its contribution on detector response is visible only when time-gated SPADs are exploited to reject a strong burst of photons.

  2. Electrical manipulation of spin states in a single electrostatically gated transition-metal complex

    DEFF Research Database (Denmark)

    Osorio, Edgar A; Moth-Poulsen, Kasper; van der Zant, Herre S J

    2010-01-01

    We demonstrate an electrically controlled high-spin (S = 5/2) to low-spin (S = 1/2) transition in a three-terminal device incorporating a single Mn(2+) ion coordinated by two terpyridine ligands. By adjusting the gate-voltage we reduce the terpyridine moiety and thereby strengthen the ligand......-field on the Mn-atom. Adding a single electron thus stabilizes the low-spin configuration and the corresponding sequential tunnelling current is suppressed by spin-blockade. From low-temperature inelastic cotunneling spectroscopy, we infer the magnetic excitation spectrum of the molecule and uncover also...... a strongly gate-dependent singlet-triplet splitting on the low-spin side. The measured bias-spectroscopy is shown to be consistent with an exact diagonalization of the Mn-complex, and an interpretation of the data is given in terms of a simplified effective model....

  3. Effects of Ambient Air and Temperature on Ionic Gel Gated Single-Walled Carbon Nanotube Thin-Film Transistor and Circuits.

    Science.gov (United States)

    Li, Huaping; Zhou, Lili

    2015-10-21

    Single-walled carbon nanotube thin-film transistor (SWCNT TFT) and circuits were fabricated by fully inkjet printing gold nanoparticles as source/drain electrodes, semiconducting SWCNT thin films as channel materials, PS-PMMA-PS/EMIM TFSI composite gel as gate dielectrics, and PEDOT/PSS as gate electrodes. The ionic gel gated SWCNT TFT shows reversible conversion from p-type transistor behavior in air to ambipolar features under vacuum due to reversible oxygen doping in semiconducting SWCNT thin films. The threshold voltages of ionic gel gated SWCNT TFT and inverters are largely shifted to the low value (0.5 V for p-region and 1.0 V for n-region) by vacuum annealing at 140 °C to exhausively remove water that is incorporated in the ionic gel as floating gates. The vacuum annealed ionic gel gated SWCNT TFT shows linear temperature dependent transconductances and threshold voltages for both p- and n-regions. The strong temperature dependent transconductances (0.08 μS/K for p-region, 0.4 μS/K for n-region) indicate their potential application in thermal sensors. In the other hand, the weak temperature dependent threshold voltages (-1.5 mV/K for p-region, -1.1 mV/K for n-region) reflect their excellent thermal stability.

  4. Simulation and parametric analysis of graphene p-n junctions with two rectangular top gates and a single back gate

    Science.gov (United States)

    Nikiforidis, Ioannis; Karafyllidis, Ioannis G.; Dimitrakis, Panagiotis

    2018-02-01

    Graphene p-n junctions could be the building blocks of future nanoelectronic circuits. While the conductance modulation of graphene p-n junctions formed in devices with one bottom and one top gate have received much attention, there is comparatively little work done on devices with two top gates. Here, we employ tight-bind Hamiltonians and non-equilibrium Green function method to compute in a systematic way the dependence of the conductance of graphene p-n junctions, formed in a device with two top gates, on the device parameters. We present our results in a compact and systematic way, so that the effect of each parameter is clearly shown. Our results show that the device conductance can be effectively modulated, and that graphene devices with two top gates may be used as basic elements in future carbon-based nanoelectronic circuits.

  5. Memory effect in gated single-photon avalanche diodes: a limiting noise contribution similar to afterpulsing

    Science.gov (United States)

    Contini, D.; Dalla Mora, A.; Di Sieno, L.; Cubeddu, R.; Tosi, A.; Boso, G.; Pifferi, A.

    2013-03-01

    In recent years, emerging applications, such as diffuse optical imaging and spectroscopy (e.g., functional brain imaging and optical mammography), in which a wide dynamic range is crucial, have turned the interest towards Single-Photon Avalanche Diode (SPAD). In these fields, the use of a fast-gated SPAD has proven to be a successful technique to increase the measurement sensitivity of different orders of magnitude. However, an unknown background noise has been observed at high illumination during the gate-OFF time, thus setting a limit to the maximum increase of the dynamic range. In this paper we describe this noise in thin-junction silicon single-photon avalanche diode when a large amount of photons reaches the gated detector during the OFF time preceding the enabling time. This memory effect increases the background noise with respect to primary dark count rate similarly to a classical afterpulsing process, but differently it is not related to a previous avalanche ignition in the detector. We discovered that memory effect increases linearly with the power of light impinging on the detector and it has an exponential trend with time constants far different from those of afterpulsing and independently of the bias voltage applied to the junction. For these reasons, the memory effect is not due to the same trapping states of afterpulsing and must be described as a different process.

  6. Single OR molecule and OR atomic circuit logic gates interconnected on a Si(100)H surface

    International Nuclear Information System (INIS)

    Ample, F; Joachim, C; Duchemin, I; Hliwa, M

    2011-01-01

    Electron transport calculations were carried out for three terminal OR logic gates constructed either with a single molecule or with a surface dangling bond circuit interconnected on a Si(100)H surface. The corresponding multi-electrode multi-channel scattering matrix (where the central three terminal junction OR gate is the scattering center) was calculated, taking into account the electronic structure of the supporting Si(100)H surface, the metallic interconnection nano-pads, the surface atomic wires and the molecule. Well interconnected, an optimized OR molecule can only run at a maximum of 10 nA output current intensity for a 0.5 V bias voltage. For the same voltage and with no molecule in the circuit, the output current of an OR surface atomic scale circuit can reach 4 μA.

  7. Single trap dynamics in electrolyte-gated Si-nanowire field effect transistors

    Science.gov (United States)

    Pud, S.; Gasparyan, F.; Petrychuk, M.; Li, J.; Offenhäusser, A.; Vitusevich, S. A.

    2014-06-01

    Liquid-gated silicon nanowire (NW) field effect transistors (FETs) are fabricated and their transport and dynamic properties are investigated experimentally and theoretically. Random telegraph signal (RTS) fluctuations were registered in the nanolength channel FETs and used for the experimental and theoretical analysis of transport properties. The drain current and the carrier interaction processes with a single trap are analyzed using a quantum-mechanical evaluation of carrier distribution in the channel and also a classical evaluation. Both approaches are applied to treat the experimental data and to define an appropriate solution for describing the drain current behavior influenced by single trap resulting in RTS fluctuations in the Si NW FETs. It is shown that quantization and tunneling effects explain the behavior of the electron capture time on the single trap. Based on the experimental data, parameters of the single trap were determined. The trap is located at a distance of about 2 nm from the interface Si/SiO2 and has a repulsive character. The theory of dynamic processes in liquid-gated Si NW FET put forward here is in good agreement with experimental observations of transport in the structures and highlights the importance of quantization in carrier distribution for analyzing dynamic processes in the nanostructures.

  8. Assessment of left ventricular diastolic function by gated single-photon emission tomography: comparison with Doppler echocardiography

    International Nuclear Information System (INIS)

    Yamano, Tetsuhiro; Sakamoto, Kenzo; Hikosaka, Takato; Zen, Kan; Nakamura, Takeshi; Sawada, Takahisa; Azuma, Akihiro; Nakagawa, Masao; Nakamura, Tomoki; Nishimura, Tsunehiko

    2003-01-01

    Gated single-photon emission tomography (SPET) is not yet an established procedure for the evaluation of left ventricular (LV) diastolic function. This study examined diastolic function derived from gated SPET in comparison with an established diagnostic tool, Doppler echocardiography. We examined 37 consecutive patients with normal sinus rhythm who underwent gated technetium-99m tetrofosmin SPET. A gated SPET program was used with a temporal resolution of 32 frames per R-R interval. We obtained the Doppler transmitral flow velocity waveform immediately before gated SPET image acquisition. Patients who showed a ratio of peak early transmitral flow velocity to atrial flow velocity (E/A) of >1 or whose R-R intervals differed by >5% between Doppler echocardiography and gated SPET were excluded from this investigation. We compared diastolic indices and presumed corresponding intervals in diastole using the two methods. The peak filling rate (PFR) derived from gated SPET correlated with the Doppler peak velocity of the early transmitral flow (E) wave (r=0.65) and deceleration of the E wave (r=0.71). The time to PFR and percent atrial contribution to LV filling from gated SPET correlated excellently with the Doppler LV isovolumic relaxation time (r=0.93) and the E/A ratio (r=-0.85), respectively. There was a significant linear correlation in all the intervals from the R wave to the presumed corresponding diastolic points. The point of PFR in gated SPET and the peak of the E wave in Doppler echocardiography generally coincided. The onset of filling in gated SPET tended to be closer to the second heart sound than the start of the E wave in Doppler echocardiography. We conclude that gated SPET permits the assessment of not only myocardial perfusion and LV systolic function but also diastolic function, although there may be some errors in detection of the precise beginning of LV filling. (orig.)

  9. Single-flux-quantum logic circuits exploiting collision-based fusion gates

    International Nuclear Information System (INIS)

    Asai, T.; Yamada, K.; Amemiya, Y.

    2008-01-01

    We propose a single-flux-quantum (SFQ) logic circuit based on the fusion computing systems--collision-based and reaction-diffusion fusion computers. A fusion computing system consists of regularly arrayed unit cells (fusion gates), where each unit has two input arms and two output arms and is connected to its neighboring cells with the arms. We designed functional SFQ circuits that implemented the fusion computation. The unit cell was able to be made with ten Josephson junctions. Circuit simulation with standard Nb/Al-AlOx/Nb 2.5-kA/cm 2 process parameters showed that the SFQ fusion computing systems could operate at 10 GHz clock

  10. Electrochemical gating: A method to tune and monitor the (opto)electronic properties of functional materials

    Energy Technology Data Exchange (ETDEWEB)

    Vanmaekelbergh, D.; Houtepen, A.J.; Kelly, J.J. [Condensed Matter and Interfaces, Debye Institute, Utrecht University, Princetonplein 1, 3508 TA Utrecht (Netherlands)

    2007-12-20

    Electrochemical polarization of a crystalline, polymeric or nanoporous system or a single molecule may change the density of charge carriers in a controlled way, and hence the optical and electrical properties. If the system has two contacts, its electronic conductivity can be measured in situ as a function of the charge carrier density that is varied by the electrochemical potential. This is called electrochemical gating. Such investigations can reveal the nature of the charge carriers (mobile or localized) and the mechanism of electronic conduction. Here, we present a brief review of a number of systems including inorganic crystals, polymers, nanoporous quantum-dot solids, and single molecules for which electrochemical gating was used successfully in the study of the electronic properties. (author)

  11. PhotoGate microscopy: tracking single molecules in a cytoplasm (Conference Presentation)

    Science.gov (United States)

    Yildiz, Ahmet

    2016-02-01

    Tracking single molecules inside cells reveals the dynamics of biological processes, including receptor trafficking, signaling and cargo transport. However, individual molecules often cannot be resolved inside cells due to their high density in the cellular environment. We developed a photobleaching gate assay, which controls the number of fluorescent particles in a region of interest by repeatedly photobleaching its boundary. Using this method, we tracked single particles at surface densities two orders of magnitude higher than the single-molecule detection limit. We observed ligand-induced dimerization of epidermal growth factor receptors (EGFR) on a live cell membrane. In addition, we tracked individual intraflagellar transport (IFT) trains along the length of a cilium and observed their remodeling at the ciliary tip.

  12. A single high dose of escitalopram disrupts sensory gating and habituation, but not sensorimotor gating in healthy volunteers

    DEFF Research Database (Denmark)

    Oranje, Bob; Wienberg, Malene; Glenthøj, Birte Yding

    2011-01-01

    Early mechanisms to limit the input of sensory information to higher brain areas are important for a healthy individual. In previous studies, we found that a low dose of 10mg escitalopram (SSRI) disrupts habituation, without affecting sensory and sensorimotor gating in healthy volunteers. In the ......Early mechanisms to limit the input of sensory information to higher brain areas are important for a healthy individual. In previous studies, we found that a low dose of 10mg escitalopram (SSRI) disrupts habituation, without affecting sensory and sensorimotor gating in healthy volunteers....... In the current study a higher dose of 15mg was used. The hypothesis was that this higher dose of escitalopram would not only disrupt habituation, but also sensory and sensorimotor gating. Twenty healthy male volunteers received either placebo or 15mg escitalopram, after which they were tested in a P50...... suppression, and a habituation and prepulse inhibition (PPI) of the startle reflex paradigm. Escitalopram significantly decreased P50 suppression and habituation, but had no effect on PPI. The results indicate that habituation and sensory gating are disrupted by increased serotonergic activity, while...

  13. A new compact subthreshold behavior model for dual-material surrounding gate (DMSG) MOSFETs

    Science.gov (United States)

    Chiang, T. K.

    2009-05-01

    On the basis of exact resultant solution of two-dimensional Poisson equation, a new compact subthreshold behavior model comprising two-dimensional potential, threshold voltage, subthreshold current and subthreshold swing for the dual-material surrounding gate (DMSG) MOSFETs is successfully developed. The model shows its validity by a good agreement with the simulated results from published device simulation software MEDICI. Besides offering the physical insight into device physics, the model provides the basic designing guidance for the DMSG MOSFETs.

  14. 2-D modeling and analysis of short-channel behavior of a front high- K gate stack triple-material gate SB SON MOSFET

    Science.gov (United States)

    Banerjee, Pritha; Kumari, Tripty; Sarkar, Subir Kumar

    2018-02-01

    This paper presents the 2-D analytical modeling of a front high- K gate stack triple-material gate Schottky Barrier Silicon-On-Nothing MOSFET. Using the two-dimensional Poisson's equation and considering the popular parabolic potential approximation, expression for surface potential as well as the electric field has been considered. In addition, the response of the proposed device towards aggressive downscaling, that is, its extent of immunity towards the different short-channel effects, has also been considered in this work. The analytical results obtained have been validated using the simulated results obtained using ATLAS, a two-dimensional device simulator from SILVACO.

  15. Genotyping of single nucleotide polymorphism by probe-gated silica nanoparticles.

    Science.gov (United States)

    Ercan, Meltem; Ozalp, Veli C; Tuna, Bilge G

    2017-11-15

    The development of simple, reliable, and rapid approaches for molecular detection of common mutations is important for prevention and early diagnosis of genetic diseases, including Thalessemia. Oligonucleotide-gated mesoporous nanoparticles-based analysis is a new platform for mutation detection that has the advantages of sensitivity, rapidity, accuracy, and convenience. A specific mutation in β-thalassemia, one of the most prevalent inherited diseases in several countries, was used as model disease in this study. An assay for detection of IVS110 point mutation (A > G reversion) was developed by designing probe-gated mesoporous silica nanoparticles (MCM-41) loaded with reporter fluorescein molecules. The silica nanoparticles were characterized by AFM, TEM and BET analysis for having 180 nm diameter and 2.83 nm pore size regular hexagonal shape. Amine group functionalized nanoparticles were analysed with FTIR technique. Mutated and normal sequence probe oligonucleotides)about 12.7 nmol per mg nanoparticles) were used to entrap reporter fluorescein molecules inside the pores and hybridization with single stranded DNA targets amplified by PCR gave different fluorescent signals for mutated targets. Samples from IVS110 mutated and normal patients resulted in statistically significant differences when the assay procedure were applied. Copyright © 2017 Elsevier Inc. All rights reserved.

  16. Modeling and analysis of surface potential of single gate fully depleted SOI MOSFET using 2D-Poisson's equation

    Science.gov (United States)

    Mani, Prashant; Tyagi, Chandra Shekhar; Srivastav, Nishant

    2016-03-01

    In this paper the analytical solution of the 2D Poisson's equation for single gate Fully Depleted SOI (FDSOI) MOSFET's is derived by using a Green's function solution technique. The surface potential is calculated and the threshold voltage of the device is minimized for the low power consumption. Due to minimization of threshold voltage the short channel effect of device is suppressed and after observation we obtain the device is kink free. The structure and characteristics of SingleGate FDSOI MOSFET were matched by using MathCAD and silvaco respectively.

  17. Charge-plasma based dual-material and gate-stacked architecture of junctionless transistor for enhanced analog performance

    Science.gov (United States)

    Amin, S. Intekhab; Sarin, R. K.

    2015-12-01

    Charge plasma based doping-less dual material double gate (DL-DMDG) junctionless transistor (JLT) is proposed. This paper also demonstrate the potential impact of gate stacking (GS) (high-k + Sio2) on DL-DMDG (DL-GSDMDG) JLT device. The efficient charge plasma is created in an intrinsic silicon film to form n + source/drain (S/D) by selecting proper work function of S/D electrode which helps to minimize threshold voltage fluctuation that occurs in a heavily doped JLT device. The analog performance parameters are analyzed for both the device structures. Results are also compared with conventional dual material double gate (DMDG) and gate stacked dual material double gate (GSDMDG) JLT devices. A DL-DMDG JLT device shows improved early voltage (VEA), intrinsic gain (AV = gm/gDS) and reduced output conductance (gDS) as compared to conventional DMDG and GSDMDG JLT devices. These values are further improved for DL-GSDMDG JLT. The effect of control gate length (L1) for a fixed gate length (L = L1+L2) are also analyzed.

  18. Crosstalk error correction through dynamical decoupling of single-qubit gates in capacitively coupled singlet-triplet semiconductor spin qubits

    Science.gov (United States)

    Buterakos, Donovan; Throckmorton, Robert E.; Das Sarma, S.

    2018-01-01

    In addition to magnetic field and electric charge noise adversely affecting spin-qubit operations, performing single-qubit gates on one of multiple coupled singlet-triplet qubits presents a new challenge: crosstalk, which is inevitable (and must be minimized) in any multiqubit quantum computing architecture. We develop a set of dynamically corrected pulse sequences that are designed to cancel the effects of both types of noise (i.e., field and charge) as well as crosstalk to leading order, and provide parameters for these corrected sequences for all 24 of the single-qubit Clifford gates. We then provide an estimate of the error as a function of the noise and capacitive coupling to compare the fidelity of our corrected gates to their uncorrected versions. Dynamical error correction protocols presented in this work are important for the next generation of singlet-triplet qubit devices where coupling among many qubits will become relevant.

  19. Influence of Respiratory Gating, Image Filtering, and Animal Positioning on High-Resolution Electrocardiography-Gated Murine Cardiac Single-Photon Emission Computed Tomography

    Directory of Open Access Journals (Sweden)

    Chao Wu

    2015-01-01

    Full Text Available Cardiac parameters obtained from single-photon emission computed tomographic (SPECT images can be affected by respiratory motion, image filtering, and animal positioning. We investigated the influence of these factors on ultra-high-resolution murine myocardial perfusion SPECT. Five mice were injected with 99m technetium (99mTc-tetrofosmin, and each was scanned in supine and prone positions in a U-SPECT-II scanner with respiratory and electrocardiographic (ECG gating. ECG-gated SPECT images were created without applying respiratory motion correction or with two different respiratory motion correction strategies. The images were filtered with a range of three-dimensional gaussian kernels, after which end-diastolic volumes (EDVs, end-systolic volumes (ESVs, and left ventricular ejection fractions were calculated. No significant differences in the measured cardiac parameters were detected when any strategy to reduce or correct for respiratory motion was applied, whereas big differences (> 5% in EDV and ESV were found with regard to different positioning of animals. A linear relationship (p < .001 was found between the EDV or ESV and the kernel size of the gaussian filter. In short, respiratory gating did not significantly affect the cardiac parameters of mice obtained with ultra-high-resolution SPECT, whereas the position of the animals and the image filters should be the same in a comparative study with multiple scans to avoid systematic differences in measured cardiac parameters.

  20. Single-Event Gate Rupture in Power MOSFETs: A New Radiation Hardness Assurance Approach

    Science.gov (United States)

    Lauenstein, Jean-Marie

    2011-01-01

    Almost every space mission uses vertical power metal-semiconductor-oxide field-effect transistors (MOSFETs) in its power-supply circuitry. These devices can fail catastrophically due to single-event gate rupture (SEGR) when exposed to energetic heavy ions. To reduce SEGR failure risk, the off-state operating voltages of the devices are derated based upon radiation tests at heavy-ion accelerator facilities. Testing is very expensive. Even so, data from these tests provide only a limited guide to on-orbit performance. In this work, a device simulation-based method is developed to measure the response to strikes from heavy ions unavailable at accelerator facilities but posing potential risk on orbit. This work is the first to show that the present derating factor, which was established from non-radiation reliability concerns, is appropriate to reduce on-orbit SEGR failure risk when applied to data acquired from ions with appropriate penetration range. A second important outcome of this study is the demonstration of the capability and usefulness of this simulation technique for augmenting SEGR data from accelerator beam facilities. The mechanisms of SEGR are two-fold: the gate oxide is weakened by the passage of the ion through it, and the charge ionized along the ion track in the silicon transiently increases the oxide electric field. Most hardness assurance methodologies consider the latter mechanism only. This work demonstrates through experiment and simulation that the gate oxide response should not be neglected. In addition, the premise that the temporary weakening of the oxide due to the ion interaction with it, as opposed to due to the transient oxide field generated from within the silicon, is validated. Based upon these findings, a new approach to radiation hardness assurance for SEGR in power MOSFETs is defined to reduce SEGR risk in space flight projects. Finally, the potential impact of accumulated dose over the course of a space mission on SEGR

  1. Plasma process-induced latent damage on gate oxide - demonstrated by single-layer and multi-layer antenna structures

    NARCIS (Netherlands)

    Wang, Zhichun; Ackaert, Jan; Salm, Cora; Kuper, F.G.

    2001-01-01

    In this paper, by using both single-layer (SL) and multi-layer (ML) or stacked antenna structures, a simple experimental method is proposed to directly demonstrate the pure plasma process-induced latent damage on gate oxide without any impact of additional defects generated by normal constant

  2. Low Temperature Characterization of PMOS-type Gate-all-around Silicon nanowire FETs as single-hole-transistors

    Science.gov (United States)

    Hong, B. H.; Hwang, S. W.; Lee, Y. Y.; Son, M. H.; Ahn, D.; Cho, K. H.; Yeo, K. H.; Kim, D.-W.; Jin, G. Y.; Park, D.

    2011-12-01

    We report the single hole tunneling characteristics observed from a PMOS-type gate-all-around silicon nanowire field-effect-transistor with the radius 5 nm and the length 44 nm. The total capacitance of the quantum dot obtained from the measured Coulomb oscillations and Coulomb diamonds matches with the ideal capacitance of the silicon cylinder. It suggests that the observed single hole tunneling is originated from the fabricated structure.

  3. Performance of Thallium-201 Electrocardiography-gated Myocardial Perfusion Single Photon Emission Computed Tomography to Assess Left Ventricular Function

    Directory of Open Access Journals (Sweden)

    Guang-Uei Hung

    2005-05-01

    Full Text Available This study evaluated the performance of gated single photon emission computed tomography (SPECT with thallium-201 (201Tl in assessing left ventricular ejection fraction (LVEF, end-diastolic volume (EDV, and end-systolic volume (ESV in Taiwanese by determining repeatability and correlation with two-dimensional (2D echocardiography. A total of 18 patients underwent two sequential gated SPECT acquisitions within 30 minutes in the resting state to assess repeatability. Another 28 patients who underwent gated SPECT and 2D echocardiography within 7 days were included for comparison. The two sequential measurements were well correlated with respect to LVEF, EDV, and ESV (r = 0.97, 0.95, and 0.97, respectively, all p < 0.0001. Bland-Altman analysis revealed that two standard deviations of the absolute difference between the two sequential measurements for LVEF, EDV, and ESV were 6.4%, 16.8 mL, and 8.6 mL, respectively. For LVEF, EDV, and ESV, correlations between redistribution 201Tl-gated SPECT and echocardiography were also excellent (all r = 0.83, p < 0.0001. LVEF was similar with 201Tl-gated SPECT and echocardiography, but EDV and ESV were significantly higher with echocardiography (p < 0.05. Our study revealed that 201Tl-gated SPECT has high repeatability and excellent correlation with echocardiography for the assessment of LVEF and volumes in Taiwanese. These results support the clinical application of gated SPECT in routine 201Tl myocardial perfusion imaging in Taiwanese.

  4. Optimal strategy for a single-qubit gate and the trade-off between opposite types of decoherence

    Science.gov (United States)

    Alicki, Robert; Horodecki, Michał; Horodecki, Paweł; Horodecki, Ryszard; Jacak, Lucjan; Machnikowski, Paweł

    2004-07-01

    We study reliable quantum-information processing (QIP) under two different types of environment. The first type is Markovian exponential decay, and the appropriate elementary strategy of protection of qubit is to apply fast gates. The second one is strongly non-Markovian and occurs solely during operations on the qubit. The best strategy is then to work with slow gates. If the two types are both present, one has to optimize the speed of gate. We show that such a trade-off is present for a single-qubit operation in a semiconductor quantum dot implementation of QIP, where recombination of exciton (qubit) is Markovian, while phonon dressing gives rise to the non-Markovian contribution.

  5. Optimal strategy for a single-qubit gate and the trade-off between opposite types of decoherence

    International Nuclear Information System (INIS)

    We study reliable quantum-information processing (QIP) under two different types of environment. The first type is Markovian exponential decay, and the appropriate elementary strategy of protection of qubit is to apply fast gates. The second one is strongly non-Markovian and occurs solely during operations on the qubit. The best strategy is then to work with slow gates. If the two types are both present, one has to optimize the speed of gate. We show that such a trade-off is present for a single-qubit operation in a semiconductor quantum dot implementation of QIP, where recombination of exciton (qubit) is Markovian, while phonon dressing gives rise to the non-Markovian contribution

  6. Ta2O5 as gate dielectric material for low-voltage organic thin-film transistors

    NARCIS (Netherlands)

    Bartic, Carmen; Jansen, Henricus V.; Campitelli, Andrew; Borghs, Staf

    In this paper we report the use of Ta2O5 as gate dielectric material for organic thin-film transistors. Ta2O5 has already attracted a lot of attention as insulating material for VLSI applications. We have deposited Ta2O5 thin-films with different thickness by means of electron-beam evaporation.

  7. Analytical threshold voltage modeling of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs

    Science.gov (United States)

    Goel, Ekta; Singh, Balraj; Kumar, Sanjay; Singh, Kunal; Jit, Satyabrata

    2017-04-01

    Two dimensional threshold voltage model of ion-implanted strained-Si double-material double-gate MOSFETs has been done based on the solution of two dimensional Poisson's equation in the channel region using the parabolic approximation method. Novelty of the proposed device structure lies in the amalgamation of the advantages of both the strained-Si channel and double-material double-gate structure with a vertical Gaussian-like doping profile. The effects of different device parameters (such as device channel length, gate length ratios, germanium mole fraction) and doping parameters (such as projected range, straggle parameter) on threshold voltage of the proposed structure have been investigated. It is observed that the subthreshold performance of the device can be improved by simply controlling the doping parameters while maintaining other device parameters constant. The modeling results show a good agreement with the numerical simulation data obtained by using ATLAS™, a 2D device simulator from SILVACO.

  8. 1.5 GHz single-photon detection at telecommunication wavelengths using sinusoidally gated InGaAs/InP avalanche photodiode.

    Science.gov (United States)

    Namekata, Naoto; Adachi, Shunsuke; Inoue, Shuichiro

    2009-04-13

    We report a telecom-band single-photon detector for gigahertz clocked quantum key distribution systems. The single-photon detector is based on a sinusoidally gated InGaAs/InP avalanche photodiode. The gate repetition frequency of the single-photon detector reached 1.5 GHz. A quantum efficiency of 10.8 % at 1550 nm was obtained with a dark count probability per gate of 6.3 x 10(-7) and an afterpulsing probability of 2.8 %. Moreover, the maximum detection rate of the detector is 20 MHz.

  9. Temperature Effects on a-IGZO Thin Film Transistors Using HfO2 Gate Dielectric Material

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2014-01-01

    Full Text Available This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using hafnium oxide (HfO2 gate dielectric material. HfO2 is an attractive candidate as a high-κ dielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs. However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2 dielectric thin film during high-temperature annealing. In this study, the annealing temperature was optimized at 200°C for a HfO2 gate dielectric TFT exhibiting high mobility, a high ION/IOFF ratio, low IOFF current, and excellent subthreshold swing (SS.

  10. Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

    Directory of Open Access Journals (Sweden)

    Yu-Hsien Lin

    2015-01-01

    Full Text Available We investigated amorphous indium gallium zinc oxide (a-IGZO thin film transistors (TFTs using different high-k gate dielectric materials such as silicon nitride (Si3N4 and aluminum oxide (Al2O3 at low temperature process (<300°C and compared them with low temperature silicon dioxide (SiO2. The IGZO device with high-k gate dielectric material will expect to get high gate capacitance density to induce large amount of channel carrier and generate the higher drive current. In addition, for the integrating process of integrating IGZO device, postannealing treatment is an essential process for completing the process. The chemical reaction of the high-k/IGZO interface due to heat formation in high-k/IGZO materials results in reliability issue. We also used the voltage stress for testing the reliability for the device with different high-k gate dielectric materials and explained the interface effect by charge band diagram.

  11. Flow rate calibration II: a clinical evaluation study using PanLeucoGating as a single-platform protocol.

    Science.gov (United States)

    Storie, Ian; Sawle, Alex; Whitby, Liam; Goodfellow, Karen; Granger, Vivian; Reilly, John T; Barnett, David

    2003-09-01

    CD4(+) T-lymphocyte enumeration is vital for monitoring disease progression in individuals positive for the human immunodeficiency virus (HIV), and as a result, there is a need to develop cost-effective protocols that provide accuracy, precision, and affordability. Recently, PanLeucoGating has been shown to fulfill these requirements; however, although comparable to state-of-the-art single-platform protocols (SP), there is still a requirement for an accurate total white cell count. To overcome this limitation, we recently developed a flow-rate based calibration method that enables the PanLeucoGating protocol to be used as a SP approach, and in this study show that this approach can be used for CD4(+) T-lymphocyte enumeration. A total of 113 HIV samples were analyzed using three protocols: (a) state-of-the art SP bead-based method (MultiSet; predicate protocol), (b) PanLeucoGating protocol used as a dual-platform (DP) approach, and (c) the newly developed flow rate-based SP approach. We demonstrate that flow rate calibration can be achieved easily and that the method is highly comparable to the state-of-the-art SP method. A high correlation was observed between the predicate protocol and the SP PanLeucoGating approach over the whole range of CD4 counts tested (r(2) = 0.9928; bias 8 cells/microl), including the clinically relevant range (e.g., 0-200 CD4 cells/microl; bias 0 cells/microl). For batched samples, the cost of providing a CD4(+) T-lymphocyte count was reduced to approximately US $1. The SP PanLeucoGating is a cost-effective approach to CD4(+) T-lymphocyte enumeration that maintains accuracy and precision. Copyright 2003 Wiley-Liss, Inc.

  12. Property of electrocardiogram gated single photon emission tomography by sup 99m Tc-methoxy isobutyl isonitrile

    Energy Technology Data Exchange (ETDEWEB)

    Imai, Kamon; Nishio, Yukari; Araki, Yasushi; Saito, Satoshi; Ozawa, Yukio; Yasugi, Tadao; Hagiwara, Kazuo; Kamata, Rikisaburo (Nihon Univ., Tokyo (Japan). School of Medicine)

    1992-06-01

    {sup 99m}Tc-methoxy isobutyl isonitrile (MIBI) is a new developed myocardial perfusion imaging agent. Because this compound has higher photon energy than thallium (Tl), electrocardiogram gated single photon emission tomography (SPECT): end-diastolic (ED) and end-systolic (ES) short axis (SA) images could be taken. To investigate property of gated MIBI SPECT, MIBI myocardial scintigraphy, Tl scintigraphy (TMS) and analysis of left ventricular wall motion were performed in 6 patients with myocardial infarction. Left ventricule was divided into 8 segments. Perfusion defect (PD) was scored: '0' (normal), '1' (hypo-perfusion), '2' (defect). Wall motion abnormality (WMA) was also scored: '0' (normo-kinesis), '1' (hypo-kinesis), '2' (a-, dys-kinesis). Severity and extent of PD and WMA were calculated. Severity of WMA was 3.0{+-}2.0 (M{+-}SD), severity of PD was 3.3{+-}1.7 in TMS, 3.7{+-}1.3 in no-gated MIBI, 5.0{+-}0.6 in ES-MIBI, 7.3{+-}2.0 in ED-MIBI. Extent of WMA was 2.3{+-}1.0. Extent of PD was 2.5{+-}1.3 in TMS, 3.0{+-}1.6 in no-gated MIBI, 3.5{+-}0.8 in ES-MIBI, 4.8{+-}1.0 in ED-MIBI. Compared with wall motion abnormality, severity and extent of PD in ED-MIBI was larger. From our data, it is concluded that perfusion defect in ED-MIBI was overestimated significantly. When we evaluate gated MIBI image, we must consider this property. (author).

  13. Implementation of Dynamically Corrected Gates on a Single Electron Spin in Diamond

    Science.gov (United States)

    Rong, Xing; Geng, Jianpei; Wang, Zixiang; Zhang, Qi; Ju, Chenyong; Shi, Fazhan; Duan, Chang-Kui; Du, Jiangfeng

    2014-02-01

    Precise control of an open quantum system is critical to quantum information processing but is challenging due to inevitable interactions between the quantum system and the environment. We demonstrated experimentally a type of dynamically corrected gates using only bounded-strength pulses on the nitrogen-vacancy centers in diamond. The infidelity of quantum gates caused by a nuclear-spin bath is reduced from being the second order to the sixth order of the noise-to-control-field ratio, which offers greater efficiency in reducing infidelity. The quantum gates have been protected to the limit essentially set by the spin-lattice relaxation time T1. Our work marks an important step towards fault-tolerant quantum computation in realistic systems.

  14. Improved generation lifetime model for the electrical characterization of single- and double-gate SOI nMOSFETs

    International Nuclear Information System (INIS)

    Galeti, M; Martino, J A; Simoen, E; Claeys, C

    2008-01-01

    This work proposes a refined technique for the extraction of the generation lifetime in single- and double-gate partially depleted SOI nMOSFETs. The model presented in this paper, based on the drain current switch-off transients, takes into account the influence of the laterally non-uniform channel doping, caused by the presence of the halo implanted region, and the amount of charge controlled by the drain and source junctions on the floating body effect when the channel length is reduced. The obtained results for single-gate (SG) devices are compared with two-dimensional numerical simulations and experimental data, extracted for devices fabricated in a 0.1 µm SOI CMOS technology, showing excellent agreement. The improved model to determine the generation lifetime in double-gate (DG) devices beyond the considerations previously presented also consider the influence of the silicon layer thickness on the drain current transient. The extracted data through the improved model for DG devices were compared with measurements and two-dimensional numerical simulations of the SG devices also presenting a good adjustment with the channel length reduction and the same tendency with the silicon layer thickness variation

  15. Gate-tunable quantum dot in a high quality single layer MoS2 van der Waals heterostructure

    Science.gov (United States)

    Pisoni, Riccardo; Lei, Zijin; Back, Patrick; Eich, Marius; Overweg, Hiske; Lee, Yongjin; Watanabe, Kenji; Taniguchi, Takashi; Ihn, Thomas; Ensslin, Klaus

    2018-03-01

    We have fabricated an encapsulated monolayer MoS2 device with metallic ohmic contacts through a pre-patterned hexagonal boron nitride (hBN) layer. In the bulk, we observe an electron mobility as high as 3000 cm2/Vs at a density of 7 × 1012 cm-2 at a temperature of 1.7 K. Shubnikov-de Haas oscillations start at magnetic fields as low as 3.3 T. By realizing a single quantum dot gate structure on top of hBN, we are able to confine electrons in MoS2 and observe the Coulomb blockade effect. By tuning the middle gate voltage, we reach a double dot regime where we observe the standard honeycomb pattern in the charge stability diagram.

  16. Role of Oxygen in Ionic Liquid Gating on Two-Dimensional Cr2Ge2Te6: A Non-oxide Material.

    Science.gov (United States)

    Chen, Yangyang; Xing, Wenyu; Wang, Xirui; Shen, Bowen; Yuan, Wei; Su, Tang; Ma, Yang; Yao, Yunyan; Zhong, Jiangnan; Yun, Yu; Xie, X C; Jia, Shuang; Han, Wei

    2018-01-10

    Ionic liquid gating can markedly modulate a material's carrier density so as to induce metallization, superconductivity, and quantum phase transitions. One of the main issues is whether the mechanism of ionic liquid gating is an electrostatic field effect or an electrochemical effect, especially for oxide materials. Recent observation of the suppression of the ionic liquid gate-induced metallization in the presence of oxygen for oxide materials suggests the electrochemical effect. However, in more general scenarios, the role of oxygen in the ionic liquid gating effect is still unclear. Here, we perform ionic liquid gating experiments on a non-oxide material: two-dimensional ferromagnetic Cr 2 Ge 2 Te 6 . Our results demonstrate that despite the large increase of the gate leakage current in the presence of oxygen, the oxygen does not affect the ionic liquid gating effect on  the channel resistance of Cr 2 Ge 2 Te 6 devices (liquid gating is more effective on the modulation of the channel resistances compared to the back gating across the 300 nm thick SiO 2 .

  17. Nonenhanced ECG-gated quiescent-interval single-shot MRA (QISS-MRA) of the lower extremities: Comparison with contrast-enhanced MRA

    Energy Technology Data Exchange (ETDEWEB)

    Klasen, J. [Department of Diagnostic and Interventional Radiology, University of Duesseldorf, Medical Faculty, Duesseldorf (Germany); Blondin, D., E-mail: blondin@med.uni-duesseldorf.de [Department of Diagnostic and Interventional Radiology, University of Duesseldorf, Medical Faculty, Duesseldorf (Germany); Schmitt, P. [Siemens AG, Healthcare Sector, Erlangen (Germany); Bi, X. [Siemens Healthcare, Chicago, IL (United States); Sansone, R. [Department of Cardiology, University of Duesseldorf, Medical Faculty, Duesseldorf (Germany); Wittsack, H.-J.; Kroepil, P.; Quentin, M.; Kuhlemann, J.; Miese, F. [Department of Diagnostic and Interventional Radiology, University of Duesseldorf, Medical Faculty, Duesseldorf (Germany); Heiss, C.; Kelm, M. [Department of Cardiology, University of Duesseldorf, Medical Faculty, Duesseldorf (Germany); Antoch, G.; Lanzman, R.S. [Department of Diagnostic and Interventional Radiology, University of Duesseldorf, Medical Faculty, Duesseldorf (Germany)

    2012-05-15

    Aim: To evaluate electrocardiogram (ECG)-gated quiescent-interval single-shot magnetic resonance angiography (QISS-MRA) for nonenhanced assessment of peripheral artery occlusive disease (PAOD) using contrast-enhanced MRA (CE-MRA) as the reference standard. Materials and methods: Twenty-seven patients (mean age 66.6 {+-} 10.8 years) with PAOD were included in the study. QISS-MRA and CE-MRA of the lower extremity were performed using a 1.5 T MR scanner. In each patient, subjective image quality and the degree of stenosis were evaluated on a four-point scale for 15 predefined arterial segments. Results: Twenty-five of the 27 patients were considered for analysis. Subjective image quality of QISS-MRA was significantly lower for the distal aorta, pelvic arteries, and femoral arteries as compared to CE-MRA (p < 0.01), while no significant difference was found for other vascular segments. The degree of stenosis was overestimated with QISS-MRA in 23 of 365 (6.3%) segments and underestimated in two of 365 (0.5%) segments. As compared to CE-MRA, QISS-MRA had a high sensitivity (98.6%), specificity (96%) as well as positive and negative predictive value (88.7 and 99.6%, respectively) for the detection of significant stenosis ({>=}50%). Conclusion: ECG-gated QISS-MRA is a promising imaging technique for reliable assessment of PAOD without the use of contrast material.

  18. Nonenhanced ECG-gated quiescent-interval single-shot MRA (QISS-MRA) of the lower extremities: Comparison with contrast-enhanced MRA

    International Nuclear Information System (INIS)

    Klasen, J.; Blondin, D.; Schmitt, P.; Bi, X.; Sansone, R.; Wittsack, H.-J.; Kröpil, P.; Quentin, M.; Kuhlemann, J.; Miese, F.; Heiss, C.; Kelm, M.; Antoch, G.; Lanzman, R.S.

    2012-01-01

    Aim: To evaluate electrocardiogram (ECG)-gated quiescent-interval single-shot magnetic resonance angiography (QISS-MRA) for nonenhanced assessment of peripheral artery occlusive disease (PAOD) using contrast-enhanced MRA (CE-MRA) as the reference standard. Materials and methods: Twenty-seven patients (mean age 66.6 ± 10.8 years) with PAOD were included in the study. QISS-MRA and CE-MRA of the lower extremity were performed using a 1.5 T MR scanner. In each patient, subjective image quality and the degree of stenosis were evaluated on a four-point scale for 15 predefined arterial segments. Results: Twenty-five of the 27 patients were considered for analysis. Subjective image quality of QISS-MRA was significantly lower for the distal aorta, pelvic arteries, and femoral arteries as compared to CE-MRA (p < 0.01), while no significant difference was found for other vascular segments. The degree of stenosis was overestimated with QISS-MRA in 23 of 365 (6.3%) segments and underestimated in two of 365 (0.5%) segments. As compared to CE-MRA, QISS-MRA had a high sensitivity (98.6%), specificity (96%) as well as positive and negative predictive value (88.7 and 99.6%, respectively) for the detection of significant stenosis (≥50%). Conclusion: ECG-gated QISS-MRA is a promising imaging technique for reliable assessment of PAOD without the use of contrast material.

  19. Single-electron effects in non-overlapped multiple-gate silicon-on-insulator metal-oxide-semiconductor field-effect transistors.

    Science.gov (United States)

    Lee, W; Su, P

    2009-02-11

    This paper systematically presents controlled single-electron effects in multiple-gate silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) with various gate lengths, fin widths, gate bias and temperature. Our study indicates that using the non-overlapped gate to source/drain structure as an approach to the single-electron transistor (SET) in MOSFETs is promising. Combining the advantage of gate control and the constriction of high source/drain resistances, single-electron effects are further enhanced using the multiple-gate architecture. From the presented results, downsizing multiple-gate SOI MOSFETs is needed for future room-temperature SET applications. Besides, the tunnel barriers and access resistances may need to be further optimized. Since the Coulomb blockade oscillation can be achieved in state-of-the-art complementary metal-oxide-semiconductor (CMOS) devices, it is beneficial to build SETs in low-power CMOS circuits for ultra-high-density purposes.

  20. Modeling of Dual Gate Material Hetero-dielectric Strained PNPN TFET for Improved ON Current

    Science.gov (United States)

    Kumari, Tripty; Saha, Priyanka; Dash, Dinesh Kumar; Sarkar, Subir Kumar

    2018-01-01

    The tunnel field effect transistor (TFET) is considered to be a promising alternative device for future low-power VLSI circuits due to its steep subthreshold slope, low leakage current and its efficient performance at low supply voltage. However, the main challenging issue associated with realizing TFET for wide scale applications is its low ON current. To overcome this, a dual gate material with the concept of dielectric engineering has been incorporated into conventional TFET structure to tune the tunneling width at source-channel interface allowing significant flow of carriers. In addition to this, N+ pocket is implanted at source-channel junction of the proposed structure and the effect of strain is added for exploring the performance of the model in nanoscale regime. All these added features upgrade the device characteristics leading to higher ON current, low leakage and low threshold voltage. The present work derives the surface potential, electric field expression and drain current by solving 2D Poisson's equation at different boundary conditions. A comparative analysis of proposed model with conventional TFET has been done to establish the superiority of the proposed structure. All analytical results have been compared with the results obtained in SILVACO ATLAS device simulator to establish the accuracy of the derived analytical model.

  1. Single Event Gate Rupture in 130-nm CMOS Transistor Arrays Subjected to X-Ray Irradiation

    CERN Document Server

    Silvestri, M; Gerardin, Simone; Faccio, Federico; Paccagnella, Alessandro

    2010-01-01

    We present new experimental results on heavy ion-induced gate rupture on deep submicron CMOS transistor arrays. Through the use of dedicated test structures, composed by a large number of 130-nm MOSFETs connected in parallel, we show the response to heavy ion irradiation under high stress voltages of devices previously irradiated with X-rays. We found only a slight impact on gate rupture critical voltage at a LET of 32 MeV cm(2) mg(-1) for devices previously irradiated up to 3 Mrad(SiO2), and practically no change for 100 Mrad(SiO2) irradiation, dose of interest for the future super large hadron collider (SLHC).

  2. The Market Gate of Miletus: damages, material characteristics and the development of a compatible mortar for restoration

    Science.gov (United States)

    Siegesmund, Siegfried; Middendorf, Bernhard

    2008-12-01

    The indoor exhibit of the Market Gate of Miletus is unique for an archaeological monument. The reconstruction of the gate was done in such a way that most marble fragments were removed leaving cored marble columns 3-4 cm in thickness. These cored columns were mounted on a steel construction and filled with different mortars or filled with specially shaped blocks of brick combined with mortar. All the missing marble elements were replaced by copies made of a Portland cement based concrete, which is compositionally similar to the original building materials. During the Second World War the monument was heavily damaged by aerial bombardment. For 2 years the Market Gate of Miletus was exposed to weathering, because a brick wall protecting the gate was also destroyed. The deterioration phenomena observed are microcracks, macroscopic fractures, flaking, sugaring, greying, salt efflorescence, calcitic-sinter layers and iron oxide formation etc. The rapid deterioration seems to be due to indoor atmospheric effects, and also by a combination of incompatible materials (e.g. marble, steel, mortar, concrete, bricks etc.). Compatible building materials like mortars or stone replacing materials have to be developed for the planned restoration. The requirements for restoration mortars are chemical-mineralogical and physical-mechanical compatibilities with the existing building materials. In detail this means that the mortar should ensure good bonding properties, adapted strength development and not stain the marble when in direct contact. The favoured mortar was developed with a hydraulic binder based on iron-free white cement and pozzolana based on activated clay. A special limestone and quartz sand mixture was used as an aggregate. The cement was adjusted using chemical additives. Specially designed tests were applied extensively to prove whether the developed mortar is suitable for the restoration of this precious monument.

  3. The effect of dephasing on superadiabatic single-qubit rotation gates

    Science.gov (United States)

    Subhi Mahmoud, Gharib; Messikh, Azeddine

    2017-12-01

    To implement quantum gates stimulated Raman adiabatic passage (STIRAP) can be used. This STIRAP requires high Rabi frequencies and to overcome this problem we use superadiabatic approach. Our model is a tripod consisting of four-level system driven by three resonant fields. These fields are modulated by Gaussian pulses with different amplitudes, phases and time delays. We investigate the robustness of our model against dephasing which are caused by collisions or phase fluctuations of the fields.

  4. Material parameters from frequency dispersion simulation of floating gate memory with Ge nanocrystals in HfO2

    Science.gov (United States)

    Palade, C.; Lepadatu, A. M.; Slav, A.; Lazanu, S.; Teodorescu, V. S.; Stoica, T.; Ciurea, M. L.

    2018-01-01

    Trilayer memory capacitors with Ge nanocrystals (NCs) floating gate in HfO2 were obtained by magnetron sputtering deposition on p-type Si substrate followed by rapid thermal annealing at relatively low temperature of 600 °C. The frequency dispersion of capacitance and resistance was measured in accumulation regime of Al/HfO2 gate oxide/Ge NCs in HfO2 floating gate/HfO2 tunnel oxide/SiOx/p-Si/Al memory capacitors. For simulation of the frequency dispersion a complex circuit model was used considering an equivalent parallel RC circuit for each layer of the trilayer structure. A series resistance due to metallic contacts and Si substrate was necessary to be included in the model. A very good fit to the experimental data was obtained and the parameters of each layer in the memory capacitor, i.e. capacitances and resistances were determined and in turn the intrinsic material parameters, i.e. dielectric constants and resistivities of layers were evaluated. The results are very important for the study and optimization of the hysteresis behaviour of floating gate memories based on NCs embedded in oxide.

  5. Band diagram determination of MOS structures with different gate materials on 3C-SiC substrate

    Science.gov (United States)

    Piskorski, K.; Przewlocki, H.; Esteve, R.; Bakowski, M.

    2012-03-01

    MOS capacitors were fabricated on 3C-SiC n-type substrate (001) with a 10-μm N-type epitaxial layer. An SiO2 layer of the thickness tOX ≈55 nm was deposited by PECVD. Circular Al, Ni, and Au gate contacts 0.7 mm in diameter were formed by ion beam sputtering and lift-off. Energy band diagrams of the MOS capacitors were determined using the photoelectric, electric, and optical measurement methods. Optical method (ellipsometry) was used to determine the gate and dielectric layer thicknesses and their optical indices: the refraction n and the extinction k coefficients. Electrical method of C = f(VG) characteristic measurements allowed to determine the doping density ND and the flat band voltage VFB in the semiconductor. Most of the parameters which were necessary for the construction of the band diagrams and for determination of the basic physical properties of the structures (e.g. the effective contact potential difference ϕMS) were measured by several photoelectric methods and calculated using the measurement data. As a result, complete energy band diagrams have been determined for MOS capacitors with three different gate materials and they are demonstrated for two different gate voltages VG: for the flat-band in the semiconductor (VG = VFB) and for the flat-band in the dielectric (VG = VG0).

  6. Beneficial effect of coronary artery bypass grafting as assessed by quantitative gated single-photon emission computed tomography

    Energy Technology Data Exchange (ETDEWEB)

    Hida, Satoshi; Chikamori, Taishiro; Hirayama, Tetsuzo; Usui, Yasuhiro; Yanagisawa, Hidefumi; Morishima, Takayuki; Ishimaru, Shin; Yamashina, Akira [Tokyo Medical Coll. (Japan)

    2003-06-01

    The development of quantitative gated single-photon emission computed tomography (SPECT) has enabled the assessment of left ventricular perfusion, function and wall thickness in a single examination. Accordingly, the present study used gated SPECT to assess the benefit of coronary artery bypass grafting (CABG) in patients with coronary artery disease; 47 of those patients were evaluated before and 5 months after CABG. As a result of coronary revascularization, a significant improvement was observed in global ejection fraction (50{+-}12{yields}53{+-}11%; p<0.05). In 107 revascularized territories, the average regional reversible defect score (0.8{+-}0.5{yields}0.2{+-}0.3; p<0.0001), average regional perfusion score at rest (0.6{+-}0.6{yields}0.3{+-}0.4; p<0.0001), average regional wall motion score (0.9{+-}0.7{yields}0.7{+-}0.5; p<0.05), and end-diastolic wall thickness (8.1{+-}1.3{yields}8.6{+-}1.5 mm; p<0.0005) all improved significantly. Even in 34 non-revascularized territories, the average regional reversible defect score (0.5{+-}0.7{yields}0.2{+-}0.5; p<0.03), average regional wall motion score (0.8{+-}1.1{yields}0.5{+-}1.0; p<0.03) and end-diastolic wall thickness (8.0{+-}1.4{yields}9.1{+-}2.0 mm; p<0.03) all improved significantly. These results indicate that improvement in myocardial ischemia, hibernation and left ventricular function with CABG can be assessed in detail with gated SPECT. (author)

  7. Time-gated single-photon detection module with 110 ps transition time and up to 80 MHz repetition rate

    Energy Technology Data Exchange (ETDEWEB)

    Buttafava, Mauro, E-mail: mauro.buttafava@polimi.it; Boso, Gianluca; Ruggeri, Alessandro; Tosi, Alberto [Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Dalla Mora, Alberto [Politecnico di Milano, Dipartimento di Fisica, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy)

    2014-08-15

    We present the design and characterization of a complete single-photon counting module capable of time-gating a silicon single-photon avalanche diode with ON and OFF transition times down to 110 ps, at repetition rates up to 80 MHz. Thanks to this sharp temporal filtering of incoming photons, it is possible to reject undesired strong light pulses preceding (or following) the signal of interest, allowing to increase the dynamic range of optical acquisitions up to 7 decades. A complete experimental characterization of the module highlights its very flat temporal response, with a time resolution of the order of 30 ps. The instrument is fully user-configurable via a PC interface and can be easily integrated in any optical setup, thanks to its small and compact form factor.

  8. Electrochemical gate-controlled electron transport of redox-active single perylene bisimide molecular junctions

    International Nuclear Information System (INIS)

    Li, C; Mishchenko, A; Li, Z; Pobelov, I; Wandlowski, Th; Li, X Q; Wuerthner, F; Bagrets, A; Evers, F

    2008-01-01

    We report a scanning tunneling microscopy (STM) experiment in an electrochemical environment which studies a prototype molecular switch. The target molecules were perylene tetracarboxylic acid bisimides modified with pyridine (P-PBI) and methylthiol (T-PBI) linker groups and with bulky tert-butyl-phenoxy substituents in the bay area. At a fixed bias voltage, we can control the transport current through a symmetric molecular wire Au|P-PBI(T-PBI)|Au by variation of the electrochemical 'gate' potential. The current increases by up to two orders of magnitude. The conductances of the P-PBI junctions are typically a factor 3 larger than those of T-PBI. A theoretical analysis explains this effect as a consequence of shifting the lowest unoccupied perylene level (LUMO) in or out of the bias window when tuning the electrochemical gate potential VG. The difference in on/off ratios reflects the variation of hybridization of the LUMO with the electrode states with the anchor groups. I T -E S(T) curves of asymmetric molecular junctions formed between a bare Au STM tip and a T-PBI (P-PBI) modified Au(111) electrode in an aqueous electrolyte exhibit a pronounced maximum in the tunneling current at -0.740, which is close to the formal potential of the surface-confined molecules. The experimental data were explained by a sequential two-step electron transfer process

  9. Dual-Input AND Gate From Single-Channel Thin-Film FET

    Science.gov (United States)

    Miranda, F. A.; Pinto, N. J.; Perez, R.; Mueller, C. H.

    2008-01-01

    A regio-regular poly(3-hexylthiophene) (RRP3HT) thin-film transistor having a split-gate architecture has been fabricated on a doped silicon/silicon nitride substrate and characterized. RRP3HT is a semiconducting polymer that has a carrier mobility and on/off ratio when used in a field effect transistor (FET) configuration. This commercially available polymer is very soluble in common organic solvents and is easily processed to form uniform thin films. The most important polymer-based device fabricated and studied is the FET, since it forms the building block in logic circuits and switches for active matrix (light-emitting-diode) (LED) displays, smart cards, and radio frequency identification (RFID) cards.

  10. Evaluation of left ventricular function and volume in patients with dilated cardiomyopathy: Gated myocardial single-photon emission tomography (SPECT) versus echocardiography

    International Nuclear Information System (INIS)

    Berk, Fatma; Isgoren, S.; Demir, H.; Kozdag, G.; Ural, D.; Komsuoglu, B.

    2005-01-01

    Left ventricular function, volumes and regional wall motion provide valuable diagnostic information and are of long-term prognostic importance in patients with dilated cardiomyopathy (DCM). This study was designed to compare the effectiveness of 2D-echocardiography and gated single-photon emission tomography (SPECT) for evaluation of these parameters in patients with DCM. Gated SPECT and 2D-echocardiography were performed in 33 patients having DCM. Gated SPECT data, including left ventricular ejection fraction (LVEF), were processed using an automated algorithm. Standard technique was used for 2D-echocardiography. Regional wall motion was evaluated using both modalities and was scored by two independent observers using a 16-sement model with a 5-point scoring system. The overall agreement between the two imaging modalities for the assessment of regional wall motion was 56% (298/528 segments). With gated SPECT, LEVF, end-diastolic volume (EDV), and end-diastolic volume (EDV), and end-systolic volume (ESV) were 27+-9%, 217+-73mL, respectively, and 30.8%, 195+-58mL and, 137+-48 mL with echocardiography. The correlation between gated SPECT and 2-D-echocardiography was good (r=0.76, P<0.01) for the assessment of LVEF. The correlation for EDV and ESV were also good, but with wider limits of agreement (r=0.72, P<0.01 and r=0.73, P<0.01, respectively) and significantly higher values were obtained with gated SPECT (P<0.01). Gated SPECT and 2D-echocardiography correlate well for the assessment of LV function and LV volumes. Like 2D-echocardiography, gated SPECT provides reliable information about LV function and dimension with the additional advantage of perfusion data. (author)

  11. Solar cell structure incorporating a novel single crystal silicon material

    Science.gov (United States)

    Pankove, Jacques I.; Wu, Chung P.

    1983-01-01

    A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.

  12. Assessment of the effect of revascularization early after CABG using ECG-gated perfusion single-photon emission tomography

    Energy Technology Data Exchange (ETDEWEB)

    Kubo, Shigeto; Tadamura, Eiji; Kudoh, Takashi; Inubushi, Masayuki; Konishi, Junji [Dept. of Nuclear Medicine and Diagnostic Imaging, Kyoto University Graduate (Japan); Ikeda, Tadashi; Koshiji, Takaaki; Nishimura, Kazunobu; Komeda, Masashi [Dept. of Cardiovascular Surgery, Kyoto University (Japan); Tamaki, Nagara [Dept. of Nuclear Medicine, Hokkaido University, Sapporo (Japan)

    2001-02-01

    When an arterial graft is used, reversible perfusion defects on single-photon emission tomography (SPET) perfusion images are occasionally observed early after coronary artery bypass graft surgery (CABG), owing to the restricted flow capacity. The purpose of this study was to determine whether the functional information obtained with electrocardiography (ECG)-gated perfusion SPET could be helpful in evaluating the effect of revascularization early after CABG. Twenty-three patients (18 men and 5 women, mean age 65{+-}9 years) underwent stress/re-injection thallium-201 ECG-gated SPET before and 4 weeks after CABG (13 with exercise and 10 with dipyridamole). Patency of all grafts was confirmed by coronary angiography 1 month after CABG. Cardiac functional data including the left ventricular ejection fraction (LVEF) and the transient ischaemic dilatation (TID) ratio were analysed using a commercially available automated program. The conventional stress and re-injection tomograms were interpreted by means of a five-point scoring system in a nine-segment model. Stress-induced reversible {sup 201}Tl perfusion defects were present in 64% of the myocardial segments bypassed by patent arterial grafts, in contrast to 42% of the myocardial segments bypassed by patent venous grafts ({chi}{sup 2}=7.8, P=0.005). Of the 23 patients, 12 showed improvement in summed ischaemic scores (group 1), while 11 had no change or deterioration (group 2), although all grafts were patent on postoperative catheterization. The TID ratio improved in both group 1 and group 2 before and after CABG (1.14{+-}0.13 vs 0.99{+-}0.07, P=0.001 and 1.09{+-}0.07 vs 0.94{+-}0.05, P=0.002, respectively). However, LVEF did not significantly improve in group 1 or group 2 after CABG (42.5%{+-}9.9% vs 47.5%{+-}11.8%, and 52.1%{+-}7.5% vs 53.1%{+-}5.9%, respectively). Perfusion imaging or LVEF assessment is of limited value early after CABG. The TID ratio obtained with ECG-gated perfusion SPET may be a useful marker

  13. Tunable PIE and synchronized gating detections by FastFLIM for quantitative microscopy measurements of fast dynamics of single molecules

    Science.gov (United States)

    Sun, Yuansheng; Coskun, Ulas; Ferreon, Allan Chris; Barbieri, Beniamino; Liao, Shih-Chu Jeff

    2016-03-01

    The crosstalk between two fluorescent species causes problems in fluorescence microscopy imaging, especially for quantitative measurements such as co-localization, Förster resonance energy transfer (FRET), fluorescence cross correlation spectroscopy (FCCS). In laser scanning confocal microscopy, the lasers can be switched on and off by acousto-optic tunable filters (AOTF) in the microsecond scale for alternative line scanning in order to avoid the crosstalk while minimizing the time delay between two lasers on the same pixel location. In contrast, the pulsed interleaved excitation (PIE) technique synchronizes two pulsed lasers of different wavelengths in the nanosecond scale to enable measuring superfast dynamics of two fluorescent species simultaneously and yet quantitatively without the crosstalk contamination. This feature is critical for many cell biology applications, e.g. accurate determination of stoichiometry in FRET measurements for studying protein-protein interactions or cell signal events, detection of weaker bindings in FCCS by eliminating the false cross correlation due to the crosstalk. The PIE has been used with the time correlated single photon counting (TCSPC) electronics. Here, we describe a novel PIE development using the digital frequency domain (DFD) technique -- FastFLIM, which provides tunable PIE setups and synchronized gating detections, tailored and optimized to specific applications. A few PIE setups by FastFLIM and measurement examples are described. Combined with the sensitivity of Alba and Q2 systems, the PIE allowed us to quantitatively measure the fast dynamics of single molecules.

  14. Investigation of the Semicoa 2N7616 and 2N7425 and the Microsemi 2N7480 for Single-Event Gate Rupture and Single-Event Burnout

    Science.gov (United States)

    Scheick, Leif

    2014-01-01

    Single-event-effect test results for hi-rel total-dose-hardened power MOSFETs are presented in this report. The 2N7616 and the 2N7425 from Semicoa and the 2N7480 from International Rectifier were tested to NASA test condition standards and requirements. The 2N7480 performed well and the data agree with the manufacture's data. The 2N7616 and 2N7425 were entry parts from Semicoa using a new device architecture. Unfortunately, the device performed poorly and Semicoa is withdrawing power MOSFETs from it line due to these data. Vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) are the most commonly used power transistor. MOSFETs are typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single-event gate rupture (SEGR) or single-event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. See [1] through [5] for more information. The objective of this effort was to investigate the SEGR and SEB responses of two power MOSFETs recently produced. These tests will serve as a limited verification of these parts. It is acknowledged that further testing on the respective parts may be needed for some mission profiles.

  15. Left ventricular function assessed by multi-gated blood pool single photon emission computed tomography with [sup 99m]Tc

    Energy Technology Data Exchange (ETDEWEB)

    Murano, Ken-ichi; Narita, Michihiro; Kurihara, Tadashi (Sumitomo Hospital, Osaka (Japan))

    1992-01-01

    To evaluate the usefulness of gated blood pool single photon emission computed tomography with [sup 99m]Tc (gated SPECT) for assessing left ventricular (LV) function, we performed gated SPECT in 2 normal subjects and 18 patients including 13 with ischemic heart disease, 3 with hypertrophic cardiomyopathy and 2 with dilated cardiomyopathy. LV end-diastolic volume (LVEDV), LV ejection fraction (LVEF) and regional wall motion obtained by gated SPECT were compared with the results of contrast left ventriculography (contrast LVG), echocardiography and planar multigated blood pool imaging (planar blood pool). After the patients' red blood cells were labelled with 30 mCi (1,110 MBq) [sup 99m]Tc in vivo, gated SPECT was performed in each of 32 projections through a 360 degree arc for each of the cardiac cycle divided into 16. From these images, the left ventricular vertical long-axis image, the horizontal long-axis and short-axis images were reconstructed. To calculate LVEDV, we used serial short-axis images which were composed of LV. To define LV and left atrial borders, we used amplitude images and cinematic displays of the vertical long-axis image. The level of the optimal cut for delineating the LV border was determined from the volume-cut-level-graph at each background activity, which was constructed by a phantom study. LV wall motion by gated SPECT was compared with the results of contrast LVG according to segmental analysis. LVEDV obtained by gated SPECT showed an excellent linear correlation with LVEDV calculated by echocardiography (r=0.98) and by contrast LVG (r=0.89). LVEF as determined by gated SPECT correlated well with the results obtained by the planar blood pool (r=0.94) and by contrast LVG (r=0.94). The visual interpretation of regional wall motion according to gated SPECT agreed with that determined by contrast LVG. We concluded that gated SPECT is a reliable method for assessing LV function. (author).

  16. NASA Electronic Parts and Packaging Field Programmable Gate Array Single Event Effects Test Guideline Update

    Science.gov (United States)

    Berg, Melanie D.; LaBel, Kenneth A.

    2018-01-01

    The following are updated or new subjects added to the FPGA SEE Test Guidelines manual: academic versus mission specific device evaluation, single event latch-up (SEL) test and analysis, SEE response visibility enhancement during radiation testing, mitigation evaluation (embedded and user-implemented), unreliable design and its affects to SEE Data, testing flushable architectures versus non-flushable architectures, intellectual property core (IP Core) test and evaluation (addresses embedded and user-inserted), heavy-ion energy and linear energy transfer (LET) selection, proton versus heavy-ion testing, fault injection, mean fluence to failure analysis, and mission specific system-level single event upset (SEU) response prediction. Most sections within the guidelines manual provide information regarding best practices for test structure and test system development. The scope of this manual addresses academic versus mission specific device evaluation and visibility enhancement in IP Core testing.

  17. New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal-Oxide-Semiconductor Field-Effect Transistors

    Science.gov (United States)

    Te-Kuang Chiang,

    2010-07-01

    Using the exact solution of the two-dimensional Poisson equation, a new analytical model comprising two-dimensional potential and threshold voltage for short-channel fully depleted dual-material-gate silicon-on-insulator (SOI) metal-oxide-semiconductor field-effect transistors (MOSFETs) is developed. The model shows that the minimum acceptable channel length can be sustained while repressing the short-channel effects if a thin gate oxide and a thin silicon body are employed in the device. Moreover, by increasing the ratio of the screen gate length to control gate length, the threshold voltage roll-off can be more effectively reduced. The model is verified by the close agreement of its results with those of a numerical simulation using the device simulator MEDICI. The model not only offers an insight into the device physics but is also an efficient model for circuit simulation.

  18. Analytical model for subthreshold current and subthreshold swing of short-channel double-material-gate MOSFETs with strained-silicon channel on silicon—germanium substrates

    International Nuclear Information System (INIS)

    Tiwari Pramod Kumar; Saramekala Gopi Krishna; Mukhopadhyay Anand Kumar; Dubey Sarvesh

    2014-01-01

    The present work gives some insight into the subthreshold behaviour of short-channel double-material-gate strained-silicon on silicon—germanium MOSFETs in terms of subthreshold swing and off-current. The formulation of subthreshold current and, thereupon, the subthreshold swing have been done by exploiting the expression of potential distribution in the channel region of the device. The dependence of the subthreshold characteristics on the device parameters, such as Ge mole fraction, gate length ratio, work function of control gate metal and gate length, has been tested in detail. The analytical models have been validated by the numerical simulation results that were obtained from the device simulation software ATLAS™ by Silvaco Inc. (semiconductor devices)

  19. High-sensitivity pH sensor using separative extended-gate field-effect transistors with single-walled carbon-nanotube networks

    Science.gov (United States)

    Pyo, Ju-Young; Cho, Won-Ju

    2018-04-01

    We fabricate high-sensitivity pH sensors using single-walled carbon-nanotube (SWCNT) network thin-film transistors (TFTs). The sensing and transducer parts of the pH sensor are composed of separative extended-sensing gates (ESGs) with SnO2 ion-sensitive membranes and double-gate structure TFTs with thin SWCNT network channels of ∼1 nm and AlO x top-gate insulators formed by the solution-deposition method. To prevent thermal process-induced damages on the SWCNT channel layer due to the post-deposition annealing process and improve the electrical characteristics of the SWCNT-TFTs, microwave irradiation is applied at low temperatures. As a result, a pH sensitivity of 7.6 V/pH, far beyond the Nernst limit, is obtained owing to the capacitive coupling effect between the top- and bottom-gate insulators of the SWCNT-TFTs. Therefore, double-gate structure SWCNT-TFTs with separated ESGs are expected to be highly beneficial for high-sensitivity disposable biosensor applications.

  20. Single-Qubit-Gate Error below 0.0001 in a Trapped Ion

    Science.gov (United States)

    2011-01-01

    nuclear spins in liquid-state nuclear-magnetic resonance experiments [6] and with neutral atoms confined in optical lattices [7]; here we demonstrate...Single trapped ion 2.0(2)×10−5 Reference [6] (2009) Nuclear magnetic resonance 1.3(1)×10−4 Reference [7] (2010) Atoms in an optical lattice 1.4(1)×10...determined by comparing the qubit frequency measured in a Ramsey experiment with that of a Rabi experiment. Such back-to-back comparisons yielded values

  1. Single trap in liquid gated nanowire FETs: Capture time behavior as a function of current

    Science.gov (United States)

    Gasparyan, F.; Zadorozhnyi, I.; Vitusevich, S.

    2015-05-01

    The basic reason for enhanced electron capture time, τ c , of the oxide single trap dependence on drain current in the linear operation regime of p+-p-p+ silicon field effect transistors (FETs) was established, using a quantum-mechanical approach. A strong increase of τ c slope dependence on channel current is explained using quantization and tunneling concepts in terms of strong field dependence of the oxide layer single trap effective cross-section, which can be described by an amplification factor. Physical interpretation of this parameter deals with the amplification of the electron cross-section determined by both decreasing the critical field influence as a result of the minority carrier depletion and the potential barrier growth for electron capture. For the NW channel of n+-p-n+ FETs, the experimentally observed slope of τ c equals (-1). On the contrary, for the case of p+-p-p+ Si FETs in the accumulation regime, the experimentally observed slope of τ c equals (-2.8). It can be achieved when the amplification factor is about 12. Extraordinary high capture time slope values versus current are explained by the effective capture cross-section growth with decreasing electron concentration close to the nanowire-oxide interface.

  2. Engineering evaluation/cost analysis for the proposed removal of contaminated materials at the Elza Gate site, Oak Ridge, Tennessee

    Energy Technology Data Exchange (ETDEWEB)

    1991-06-01

    This engineering evaluation/cost analysis (EE/CA) has been prepared in support of the proposed removal action for cleanup of radioactive and chemically contaminated soil at the Elza Gate site in Oak Ridge, Tennessee. This property became contaminated as a result of storage of ore residues, equipment, and other materials for the US Atomic Energy Commission. The US Department of Energy is responsible for cleanup of portions of the site under its Formerly Utilized Sites Remedial Action Program. In December 1990 an area known as Pad 1 was abrasively scoured to remove surface contamination, and in March 1991 removal of Pad 1 contamination was begun under a separate EE/CA. This EE/CA is intended to cover the remaining portions of the site for which the Department of Energy has responsibility. It has been determined that an EE/CA report is appropriate documentation for the proposed removal action. This EE/CA covers removal of contaminated soils and contaminated concrete rubble from the Elza Gate site. The primary objectives of this EE/CA report are to identify and describe the preferred removal action, and to document the selection of response activities that will mitigate the potential for release of contaminants from the property into the environment and that will minimize the associated threats to human health or welfare and the environment. The preferred alternative is disposition on the Oak Ridge Reservation. 30 refs., 7 figs., 12 tabs.

  3. Engineering evaluation/cost analysis for the proposed removal of contaminated materials at the Elza Gate site, Oak Ridge, Tennessee

    International Nuclear Information System (INIS)

    1991-06-01

    This engineering evaluation/cost analysis (EE/CA) has been prepared in support of the proposed removal action for cleanup of radioactive and chemically contaminated soil at the Elza Gate site in Oak Ridge, Tennessee. This property became contaminated as a result of storage of ore residues, equipment, and other materials for the US Atomic Energy Commission. The US Department of Energy is responsible for cleanup of portions of the site under its Formerly Utilized Sites Remedial Action Program. In December 1990 an area known as Pad 1 was abrasively scoured to remove surface contamination, and in March 1991 removal of Pad 1 contamination was begun under a separate EE/CA. This EE/CA is intended to cover the remaining portions of the site for which the Department of Energy has responsibility. It has been determined that an EE/CA report is appropriate documentation for the proposed removal action. This EE/CA covers removal of contaminated soils and contaminated concrete rubble from the Elza Gate site. The primary objectives of this EE/CA report are to identify and describe the preferred removal action, and to document the selection of response activities that will mitigate the potential for release of contaminants from the property into the environment and that will minimize the associated threats to human health or welfare and the environment. The preferred alternative is disposition on the Oak Ridge Reservation. 30 refs., 7 figs., 12 tabs

  4. Re-Verification of the IRHN57133SE and IRHN57250SE for Single Event Gate Rupture and Single Event Burnout

    Science.gov (United States)

    Scheick, Leif

    2010-01-01

    The vertical metal oxide semiconductor field-effect transistor (MOSFET) is a widely used power transistor onboard a spacecraft. The MOSFET is typically employed in power supplies and high current switching applications. Due to the inherent high electric fields in the device, power MOSFETs are sensitive to heavy ion irradiation and can fail catastrophically as a result of single event gate rupture (SEGR) or single event burnout (SEB). Manufacturers have designed radiation-hardened power MOSFETs for space applications. These radiation hardened devices are not immune to SEGR or SEB but, rather, can exhibit them at a much more damaging ion than their non-radiation hardened counterparts. See [1] through [5] for more information.This effort was to investigate the SEGR and SEB responses of two power MOSFETs from IR(the IRHN57133SE and the IRHN57250SE) that have recently been produced on a new fabrication line. These tests will serve as a limited verification of these parts, but it is acknowledged that further testing on the respective parts may be needed for some mission profiles.

  5. Gating circuit for single photon-counting fluorescence lifetime instruments using high repetition pulsed light sources

    International Nuclear Information System (INIS)

    Laws, W.R.; Potter, D.W.; Sutherland, J.C.

    1984-01-01

    We have constructed a circuit that permits conventional timing electronics to be used in single photon-counting fluorimeters with high repetition rate excitation sources (synchrotrons and mode-locked lasers). Most commercial time-to-amplitude and time-to-digital converters introduce errors when processing very short time intervals and when subjected to high-frequency signals. This circuit reduces the frequency of signals representing the pulsed light source (stops) to the rate of detected fluorescence events (starts). Precise timing between the start/stop pair is accomplished by using the second stop pulse after a start pulse. Important features of our design are that the circuit is insensitive to the simultaneous occurrence of start and stop signals and that the reduction in the stop frequency allows the start/stop time interval to be placed in linear regions of the response functions of commercial timing electronics

  6. Exercise-induced stunning continues for at least one hour: evaluation with quantitative gated single-photon emission tomography

    International Nuclear Information System (INIS)

    Paul, A.K.; Hasegawa, Shinji; Yoshioka, Jun; Tsujimura, Eiichiro; Yamaguchi, Hitoshi; Tokita, Naoki; Maruyama, Atsushi; Xiuli, Mu; Nishimura, Tsunehiko

    1999-01-01

    To elucidate the after-effect of exercise on left ventricular (LV) function, end-diastolic volume (EDV), end-systolic volume (ESV) and ejection fraction (LVEF) were evaluated at 1 h after exercise and at rest by technetium-99m tetrofosmin gated myocardial single-photon emission tomography (SPET) using an automated program in 53 subjects. The subjects were grouped as follows: normal scan (n = 16), ischaemia (n = 19) and infarction (n = 18), based on the interpretation of perfusion images. Postexercise LVEF did not differ from resting LVEF in the groups with normal scan and infarction. In patients with ischaemia, postexercise EDV (90±17 ml, mean ±SD) and ESV (44±15 ml) were significantly higher than EDV (84±15 ml, P = 0.001) and ESV (36±14 ml, P<0.0005) at rest. LVEF was significantly depressed 1 h after exercise (53%±9% vs 58%±9%, P<0.0001). In ischaemic patients with depressed postexercise LVEF, LVEF difference between rest and postexercise showed a significant correlation with the sum of defect scores, which were reversible from exercise to rest perfusion images (r = 0.92, P<0.0001). These results indicate that exercise-induced LV dysfunction (myocardial stunning) continues for at least 1 h in ischaemic patients and that the extent of LVEF depression is determined by the severity of ischaemia. (orig.)

  7. Exercise-induced stunning continues for at least one hour: evaluation with quantitative gated single-photon emission tomography

    Energy Technology Data Exchange (ETDEWEB)

    Paul, A.K.; Hasegawa, Shinji; Yoshioka, Jun; Tsujimura, Eiichiro; Yamaguchi, Hitoshi; Tokita, Naoki; Maruyama, Atsushi; Xiuli, Mu; Nishimura, Tsunehiko [Division of Tracer Kinetics, Biomedical Research Center, Osaka University Medical School, Suita, Osaka (Japan)

    1999-04-29

    To elucidate the after-effect of exercise on left ventricular (LV) function, end-diastolic volume (EDV), end-systolic volume (ESV) and ejection fraction (LVEF) were evaluated at 1 h after exercise and at rest by technetium-99m tetrofosmin gated myocardial single-photon emission tomography (SPET) using an automated program in 53 subjects. The subjects were grouped as follows: normal scan (n = 16), ischaemia (n = 19) and infarction (n = 18), based on the interpretation of perfusion images. Postexercise LVEF did not differ from resting LVEF in the groups with normal scan and infarction. In patients with ischaemia, postexercise EDV (90{+-}17 ml, mean {+-}SD) and ESV (44{+-}15 ml) were significantly higher than EDV (84{+-}15 ml, P = 0.001) and ESV (36{+-}14 ml, P<0.0005) at rest. LVEF was significantly depressed 1 h after exercise (53%{+-}9% vs 58%{+-}9%, P<0.0001). In ischaemic patients with depressed postexercise LVEF, LVEF difference between rest and postexercise showed a significant correlation with the sum of defect scores, which were reversible from exercise to rest perfusion images (r = 0.92, P<0.0001). These results indicate that exercise-induced LV dysfunction (myocardial stunning) continues for at least 1 h in ischaemic patients and that the extent of LVEF depression is determined by the severity of ischaemia. (orig.) With 7 figs., 19 refs.

  8. Electro-oxidized epitaxial graphene channel field-effect transistors with single-walled carbon nanotube thin film gate electrode.

    Science.gov (United States)

    Ramesh, Palanisamy; Itkis, Mikhail E; Bekyarova, Elena; Wang, Feihu; Niyogi, Sandip; Chi, Xiaoliu; Berger, Claire; de Heer, Walt; Haddon, Robert C

    2010-10-20

    We report the effect of electrochemical oxidation in nitric acid on the electronic properties of epitaxial graphene (EG) grown on silicon carbide substrates; we demonstrate the availability of an additional reaction channel in EG, which is not present in graphite but which facilitates the introduction of the reaction medium into the graphene galleries during electro-oxidation. The device performance of the chemically processed graphene was studied by patterning the EG wafers with two geometrically identical macroscopic channels; the electro-oxidized channel showed a logarithmic increase of resistance with decreasing temperature, which is ascribed to the scattering of charge carriers in a two-dimensional electronic gas, rather than the presence of an energy gap at the Fermi level. Field-effect transistors were fabricated on the electro-oxidized and pristine graphene channels using single-walled carbon nanotube thin film top gate electrodes, thereby allowing the study of the effect of oxidative chemistry on the transistor performance of EG. The electro-oxidized channel showed higher values for the on-off ratio and the mobility of the graphene field-effect transistor, which we ascribe to the availability of high-quality internal graphene layers after electro-oxidation of the more defective top layers. Thus, the present oxidative process provides a clear contrast with previously demonstrated covalent chemistry in which sp(3) hybridized carbon atoms are introduced into the graphitic transport layer of the lattice by carbon-carbon bond formation, thereby opening an energy gap.

  9. Gigahertz-gated InGaAs/InP single-photon detector with detection efficiency exceeding 55% at 1550 nm

    International Nuclear Information System (INIS)

    Comandar, L. C.; Fröhlich, B.; Dynes, J. F.; Sharpe, A. W.; Lucamarini, M.; Yuan, Z. L.; Shields, A. J.; Penty, R. V.

    2015-01-01

    We report on a gated single-photon detector based on InGaAs/InP avalanche photodiodes (APDs) with a single-photon detection efficiency exceeding 55% at 1550 nm. Our detector is gated at 1 GHz and employs the self-differencing technique for gate transient suppression. It can operate nearly dead time free, except for the one clock cycle dead time intrinsic to self-differencing, and we demonstrate a count rate of 500 Mcps. We present a careful analysis of the optimal driving conditions of the APD measured with a dead time free detector characterization setup. It is found that a shortened gate width of 360 ps together with an increased driving signal amplitude and operation at higher temperatures leads to improved performance of the detector. We achieve an afterpulse probability of 7% at 50% detection efficiency with dead time free measurement and a record efficiency for InGaAs/InP APDs of 55% at an afterpulse probability of only 10.2% with a moderate dead time of 10 ns

  10. Fluorescence-based high-throughput functional profiling of ligand-gated ion channels at the level of single cells.

    Directory of Open Access Journals (Sweden)

    Sahil Talwar

    Full Text Available Ion channels are involved in many physiological processes and are attractive targets for therapeutic intervention. Their functional properties vary according to their subunit composition, which in turn varies in a developmental and tissue-specific manner and as a consequence of pathophysiological events. Understanding this diversity requires functional analysis of ion channel properties in large numbers of individual cells. Functional characterisation of ligand-gated channels involves quantitating agonist and drug dose-response relationships using electrophysiological or fluorescence-based techniques. Electrophysiology is limited by low throughput and high-throughput fluorescence-based functional evaluation generally does not enable the characterization of the functional properties of each individual cell. Here we describe a fluorescence-based assay that characterizes functional channel properties at single cell resolution in high throughput mode. It is based on progressive receptor activation and iterative fluorescence imaging and delivers >100 dose-responses in a single well of a 384-well plate, using α1-3 homomeric and αβ heteromeric glycine receptor (GlyR chloride channels as a model system. We applied this assay with transiently transfected HEK293 cells co-expressing halide-sensitive yellow fluorescent protein and different GlyR subunit combinations. Glycine EC50 values of different GlyR isoforms were highly correlated with published electrophysiological data and confirm previously reported pharmacological profiles for the GlyR inhibitors, picrotoxin, strychnine and lindane. We show that inter and intra well variability is low and that clustering of functional phenotypes permits identification of drugs with subunit-specific pharmacological profiles. As this method dramatically improves the efficiency with which ion channel populations can be characterized in the context of cellular heterogeneity, it should facilitate systems

  11. Evaluation of left ventricular function and volumes in patients with ischaemic cardiomyopathy: gated single-photon emission computed tomography versus two-dimensional echocardiography

    Energy Technology Data Exchange (ETDEWEB)

    Vourvouri, E.C.; Poldermans, D.; Sianos, G.; Sozzi, F.B.; Schinkel, A.F.L.; Sutter, J. de; Roelandt, J.R.T.C. [Dept. of Cardiology, Erasmus Medical Center Rotterdam (Netherlands); Bax, J.J. [Dept. of Cardiology, Leiden Univ. Medical Center (Netherlands); Parcharidis, G. [Dept. of Cardiology, AHEPA Univ. Hospital, Thessaloniki (Greece); Valkema, R. [Dept. of Nuclear Medicine, Erasmus Medical Center Rotterdam (Netherlands)

    2001-11-01

    The objective of this study was to perform a head-to-head comparison between two-dimensional (2D) echocardiography and gated single-photon emission computed tomography (SPET) for the evaluation of left ventricular (LV) function and volumes in patients with severe ischaemic LV dysfunction. Thirty-two patients with chronic ischaemic LV dysfunction [mean LV ejection fraction (EF) 25%{+-}6%] were studied with gated SPET and 2D echocardiography. Regional wall motion was evaluated by both modalities and scored by two independent observers using a 16-segment model with a 5-point scoring system (1= normokinesia, 2= mild hypokinesia, 3= severe hypokinesia, 4= akinesia and 5= dyskinesia). LVEF and LV end-diastolic and end-systolic volumes were evaluated by 2D echocardiography using the Simpson's biplane discs method. The same parameters were calculated using quantitative gated SPET software (QGS, Cedars-Sinai Medical Center). The overall agreement between the two imaging modalities for assessment of regional wall motion was 69%. The correlations between gated SPET and 2D echocardiography for the assessment of end-diastolic and end-systolic volumes were excellent (r=0.94, P<0.01, and r=0.96, P<0.01, respectively). The correlation for LVEF was also good (r=0.83, P<0.01). In conclusion: in patients with ischaemic cardiomyopathy, close and significant relations between gated SPET and 2D echocardiography were observed for the assessment of regional and global LV function and LV volumes; gated SPET has the advantage that it provides information on both LV function/dimensions and perfusion. (orig.)

  12. Two-dimensional model for subthreshold current and subthreshold swing of graded-channel dual-material double-gate (GCDMDG) MOSFETs

    Science.gov (United States)

    Goel, Ekta; Kumar, Sanjay; Singh, Balraj; Singh, Kunal; Jit, Satyabrata

    2017-06-01

    The subthreshold performance of graded-channel dual-material double-gate (GCDMDG) MOSFETs is examined through two-dimensional (2D) analytical modeling of subthreshold-current (SC) and subthreshold-swing (SS). The potential function obtained by using the parabolic approach to solve the 2D Poisson's equation, has been used to formulate SC and SS characteristics of the device. The variations of SS against different device parameters have been obtained with the help of effective conduction path parameter. The SC and SS characteristics of the GCDMDG MOS transistor have been compared with those of the dual-material double-gate (DMDG) and simple graded-channel double-gate (GCDG) MOS structures to show its better subthreshold characteristics over the latter two devices. The results of the developed model are well-agreed with the commercially available SILVACO ATLAS™ simulator data.

  13. The four-gate transistor

    Science.gov (United States)

    Mojarradi, M. M.; Cristoveanu, S.; Allibert, F.; France, G.; Blalock, B.; Durfrene, B.

    2002-01-01

    The four-gate transistor or G4-FET combines MOSFET and JFET principles in a single SOI device. Experimental results reveal that each gate can modulate the drain current. Numerical simulations are presented to clarify the mechanisms of operation. The new device shows enhanced functionality, due to the combinatorial action of the four gates, and opens rather revolutionary applications.

  14. Gate-Tunable Spin Exchange Interactions and Inversion of Magnetoresistance in Single Ferromagnetic ZnO Nanowires.

    Science.gov (United States)

    Modepalli, Vijayakumar; Jin, Mi-Jin; Park, Jungmin; Jo, Junhyeon; Kim, Ji-Hyun; Baik, Jeong Min; Seo, Changwon; Kim, Jeongyong; Yoo, Jung-Woo

    2016-04-26

    Electrical control of ferromagnetism in semiconductor nanostructures offers the promise of nonvolatile functionality in future semiconductor spintronics. Here, we demonstrate a dramatic gate-induced change of ferromagnetism in ZnO nanowire (NW) field-effect transistors (FETs). Ferromagnetism in our ZnO NWs arose from oxygen vacancies, which constitute deep levels hosting unpaired electron spins. The magnetic transition temperature of the studied ZnO NWs was estimated to be well above room temperature. The in situ UV confocal photoluminescence (PL) study confirmed oxygen vacancy mediated ferromagnetism in the studied ZnO NW FET devices. Both the estimated carrier concentration and temperature-dependent conductivity reveal the studied ZnO NWs are at the crossover of the metal-insulator transition. In particular, gate-induced modulation of the carrier concentration in the ZnO NW FET significantly alters carrier-mediated exchange interactions, which causes even inversion of magnetoresistance (MR) from negative to positive values. Upon sweeping the gate bias from -40 to +50 V, the MRs estimated at 2 K and 2 T were changed from -11.3% to +4.1%. Detailed analysis on the gate-dependent MR behavior clearly showed enhanced spin splitting energy with increasing carrier concentration. Gate-voltage-dependent PL spectra of an individual NW device confirmed the localization of oxygen vacancy-induced spins, indicating that gate-tunable indirect exchange coupling between localized magnetic moments played an important role in the remarkable change of the MR.

  15. Single-crystal C60 needle/CuPc nanoparticle double floating-gate for low-voltage organic transistors based non-volatile memory devices.

    Science.gov (United States)

    Chang, Hsuan-Chun; Lu, Chien; Liu, Cheng-Liang; Chen, Wen-Chang

    2015-01-07

    Low-voltage organic field-effect transistor memory devices exhibiting a wide memory window, low power consumption, acceptable retention, endurance properties, and tunable memory performance are fabricated. The performance is achieved by employing single-crystal C60 needles and copper phthalocyanine nanoparticles to produce an ambipolar (hole/electron) trapping effect in a double floating-gate architecture. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. 1.25  GHz sine wave gating InGaAs/InP single-photon detector with a monolithically integrated readout circuit.

    Science.gov (United States)

    Jiang, Wen-Hao; Liu, Jian-Hong; Liu, Yin; Jin, Ge; Zhang, Jun; Pan, Jian-Wei

    2017-12-15

    InGaAs/InP single-photon detectors (SPDs) are the key devices for applications requiring near-infrared single-photon detection. The gating mode is an effective approach to synchronous single-photon detection. Increasing gating frequency and reducing the module size are important challenges for the design of such a detector system. Here we present for the first time, to the best of our knowledge, an InGaAs/InP SPD with 1.25 GHz sine wave gating (SWG) using a monolithically integrated readout circuit (MIRC). The MIRC has a size of 15  mm×15  mm and implements the miniaturization of avalanche extraction for high-frequency SWG. In the MIRC, low-pass filters and a low-noise radio frequency amplifier are integrated based on the technique of low temperature co-fired ceramic, which can effectively reduce the parasitic capacitance and extract weak avalanche signals. We then characterize the InGaAs/InP SPD to verify the functionality and reliability of the MIRC, and the SPD exhibits excellent performance with 27.5% photon detection efficiency, a 1.2 kcps dark count rate, and 9.1% afterpulse probability at 223 K and 100 ns hold-off time. With this MIRC, one can further design miniaturized high-frequency SPD modules that are highly required for practical applications.

  17. ECG-gated quiescent-interval single-shot MR angiography of the lower extremities: Initial experience at 3 T

    International Nuclear Information System (INIS)

    Knobloch, G.; Gielen, M.; Lauff, M.-T.; Romano, V.C.; Schmitt, P.; Rick, M.; Kröncke, T.J.; Huppertz, A.; Hamm, B.; Wagner, M.

    2014-01-01

    Aim: To evaluate the feasibility of unenhanced electrocardiography (ECG)-gated quiescent-interval single-shot magnetic resonance angiography (QISS-MRA) of the lower extremities at 3 T. Materials and methods: Twenty-five patients with known or suspected peripheral arterial disease underwent ECG-gated QISS-MRA and contrast-enhanced MRA (CE-MRA) at 3 T. Two independent readers performed a per-segment evaluation of the MRA datasets. Image quality was rated on a four-point scale (1 = excellent to 4 = non-diagnostic; presented as medians with interquartile range). Diagnostic performance of QISS-MRA was evaluated using CE-MRA as the reference standard. Results: QISS-MRA and CE-MRA of all patients were considered for analysis, resulting in 807 evaluated vessel segments for each MRA technique. Readers 1 and 2 rated image quality of QISS-MRA as diagnostic in 97.3% and 97% of the vessel segments, respectively. CE-MRA was rated diagnostic in all vessel segments. Image quality of the proximal vessel segments, including the infrarenal aorta, iliac arteries, and common femoral artery, was significantly lower on QISS-MRA compared to CE-MRA [image quality score across readers: 2 (1,3) versus 1 (1,1) p < 0.001]. In the more distal vessel segments, image quality of QISS-MRA was excellent and showed no significant difference compared to CE-MRA [image quality score across readers: 1 (1,1) versus 1 (1,1) p = 0.036]. Diagnostic performance of QISS-MRA was as follows (across readers): sensitivity: 87.5% (95% CI: 80.2–92.4%); specificity: 96.1% (95% CI: 93.6–97.6%); diagnostic accuracy: 94.9% (95% CI: 92.6–96.5%). Conclusions: QISS-MRA of the lower extremities is feasible at 3 T and provides high image quality, especially in the distal vessel segments

  18. Single-crystal growth of ceria-based materials

    International Nuclear Information System (INIS)

    Ulbrich, Gregor

    2015-01-01

    In this work it could be shown that Skull-Melting is a suitable method for growing ceria single crystals. Twenty different ceria-based single crystals could be manufactured. It was possible to dope ceria single crystals with Gd, Sm, Y, Zr, Ti, Ta, and Pr in different concentrations. Also co-doping with the named metals was realized. However, there remain some problems for growing ceria-based single crystals by Skull-Melting. As ignition metal zirconium was used because no ceria-based material works well. For that reason all single crystals show small zirconium contamination. Another problem is the formation of oxygen by the heat-induced reduction of ceria during the melting process. Because of that the skull of sintered material is often destroyed by gas pressure. This problem had to be solved individually for every single crystal. The obtained single crystals were characterized using different methods. To ensure the single crystal character the y were examined by Laue diffraction. All manufactured crystals are single crystals. Also powder diffraction patterns of the milled and oxidized samples were measured. For the determination of symmetry and metric the structural parameters were analyzed by the Rietveld method. All synthesized materials crystallize in space group Fm-3m known from calcium fluoride. The cubic lattice parameter a was determined for all crystals. In the case of series with different cerium and zirconium concentrations a linear correlation between cerium content and cubic lattice parameter was detected. The elemental composition was determined by WDX. All crystals show a homogeneous elemental distribution. The oxygen content was calculated because the WDX method isn't useful for determination.

  19. 2-D analytical modeling of subthreshold current and subthreshold swing for ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs

    Science.gov (United States)

    Goel, Ekta; Singh, Kunal; Singh, Balraj; Kumar, Sanjay; Jit, Satyabrata

    2017-09-01

    In this paper, the subthreshold behavior of ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs has been analyzed by means of subthreshold current and subthreshold swing. The surface potential based formulation of subthreshold current and subthreshold swing is done by solving the 2-D Poisson's equations in the channel region using parabolic approximation method. The dependence of subthreshold characteristics on various device parameters such as gate length ratio, Ge mole fraction, peak doping concentration, projected range, straggle parameter etc. has been studied. The modeling results are found to be well matched with the simulation data obtained by a 2-D device simulator, ATLAS™, from SILVACO.

  20. A bespoke single-band Hubbard model material

    Science.gov (United States)

    Griffin, S. M.; Staar, P.; Schulthess, T. C.; Troyer, M.; Spaldin, N. A.

    2016-02-01

    The Hubbard model, which augments independent-electron band theory with a single parameter to describe electron-electron correlations, is widely regarded to be the "standard model" of condensed-matter physics. The model has been remarkably successful at addressing a range of correlation phenomena in solids, but it neglects many behaviors that occur in real materials, such as phonons, long-range interactions, and, in its simplest form, multiorbital effects. Here, we use ab initio electronic structure methods to design a material whose Hamiltonian matches as closely as possible that of the single-band Hubbard model. Our motivation is to compare the measured properties of our new material to those predicted by reliable theoretical solutions of the Hubbard model to determine the relevance of the model in the description of real materials. After identifying an appropriate crystal class and several appropriate chemistries, we use density-functional theory and dynamical mean-field theory to screen for the desired electronic band structure and metal-insulator transition. We then explore the most promising candidates for structural stability and suitability for doping, and we propose specific materials for subsequent synthesis. Finally, we identify a regime—that should manifest in our bespoke material—in which the single-band Hubbard model on a triangular lattice exhibits exotic d -wave superconductivity.

  1. Extraction of contact resistance and channel parameters from the electrical characteristics of a single bottom-gate/top-contact organic transistor

    Science.gov (United States)

    Takagaki, Shunsuke; Yamada, Hirofumi; Noda, Kei

    2016-03-01

    A parameter extraction procedure for staggered-type organic field-effect transistors (OFETs), in which only the electrical characteristics of a single device are needed, was newly considered. The existing differential method and the transition voltage method for evaluating contact and channel parameters in OFETs were complementarily combined. The calibration of the total resistance between the source and the drain was also incorporated to compensate discrepancies in the total resistances calculated from output and transfer characteristics, caused by the existence of nonignorable contact resistance and carrier traps. By using our proposed method, gate-voltage-dependent contact resistance and channel mobility in the linear regime were evaluated for bottom-gate/top-contact pentacene thin-film transistors, and the channel-length dependence of these parameters was investigated. A series of results of parameter extraction confirm the validity of our proposed method, which is advantageous in avoiding the influences of characteristic variations that are frequently observed in practical OFET devices.

  2. Computational and Experimental Insight Into Single-Molecule Piezoelectric Materials

    Science.gov (United States)

    Marvin, Christopher Wayne

    Piezoelectric materials allow for the harvesting of ambient waste energy from the environment. Producing lightweight, highly responsive materials is a challenge for this type of material, requiring polymer, foam, or bio-inspired materials. In this dissertation, I explore the origin of the piezoelectric effect in single molecules through density functional theory (DFT), analyze the piezoresponse of bio-inspired peptidic materials through the use of atomic and piezoresponse force microscopy (AFM and PFM), and develop a novel class of materials combining flexible polyurethane foams and non-piezoelectric, polar dopants. For the DFT calculations, functional group, regiochemical, and heteroatom derivatives of [6]helicene were examined for their influence on the piezoelectric response. An aza[6]helicene derivative was found to have a piezoelectric response (108 pm/V) comparable to ceramics such as lead zirconium titanate (200+ pm/V). These computed materials have the possibility to compete with current field-leading piezomaterials such as lead zirconium titanate (PZT), zinc oxide (ZnO), and polyvinylidene difluoride (PVDF) and its derivatives. The use of AFM/PFM allows for the demonstration of the piezoelectric effect of the selfassembled monolayer (SAM) peptidic systems. Through PFM, the influence that the helicity and sequence of the peptide has on the overall response of the molecule can be analyzed. Finally, development of a novel class of piezoelectrics, the foam-based materials, expands the current understanding of the qualities required for a piezoelectric material from ceramic and rigid materials to more flexible, organic materials. Through the exploration of these novel types of piezoelectric materials, new design rules and figures of merit have been developed.

  3. Piezophototronic Effect in Single-Atomic-Layer MoS 2 for Strain-Gated Flexible Optoelectronics

    Energy Technology Data Exchange (ETDEWEB)

    Wu, Wenzhuo [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Wang, Lei [Department of Electrical Engineering, Columbia University, New York NY 10027 USA; Yu, Ruomeng [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Liu, Yuanyue [National Renewable Energy Laboratory (NREL), Golden CO 80401 USA; Wei, Su-Huai [National Renewable Energy Laboratory (NREL), Golden CO 80401 USA; Hone, James [Department of Mechanical Engineering, Columbia University, New York NY 10027 USA; Wang, Zhong Lin [School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245 USA; Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, 100083 Beijing China

    2016-08-03

    Strain-gated flexible optoelectronics are reported based on monolayer MoS2. Utilizing the piezoelectric polarization created at metal-MoS2 interface to modulate the separation/transport of photogenerated carriers, the piezophototronic effect is applied to implement atomic-layer-thick phototransistor. Coupling between piezoelectricity and photogenerated carriers may enable the development of novel optoelectronics.

  4. Experimental Implementation of High-Fidelity Single-Qubit Gates for Two-Electron Spin Qubits in GaAs

    Science.gov (United States)

    Cerfontaine, Pascal; Botzem, Tim; Bluhm, Hendrik

    2015-03-01

    High fidelity gate operations for manipulating individual and multiple qubits in the presence of decoherence are a prerequisite for fault-tolerant quantum information processing. However, the control methods used in earlier experiments on GaAs two-electron spin qubits are based on unrealistic approximations which preclude reaching the required fidelities. An attractive remedy is to use control pulses found in numerical simulations that minimize the infidelity from decoherence and take the experimentally important imperfections and constraints into account. We show that the experimental implementation of these numerically optimized control pulses is possible by using a self-consistent calibration routine we proposed earlier. In our experiment this calibration routine succeeds in removing systematic gate errors to a high degree without increasing the pulses' decoherence. We extract the Bloch sphere trajectories of the resulting gate sequences using self-consistent state tomography and find good agreement with the theoretically predicted trajectories. Furthermore, we prepare different states using these gates and determine their fidelities. Alfried Krupp von Bohlen und Halbach - Foundation, Deutsche Telekom Foundation.

  5. Effects of low-dose dobutamine on left ventricular function in normal subjects as assessed by gated single-photon emission tomography myocardial perfusion studies

    Energy Technology Data Exchange (ETDEWEB)

    Everaert, H.; Vanhove, C.; Franken, P.R. [Div. of Nuclear Medicine, University Hospital, Free University of Brussels (Belgium)

    1999-10-01

    Electrocardiography gated single-photon emission tomography (gated SPET) allows the assessment of regional perfusion and function simultaneously and in full spatial congruency. In this study changes in global and regional left ventricular function in response to dobutamine infusion were assessed in ten healthy volunteers using sequential gated SPET myocardial perfusion acquisitions. Four consecutive gated SPET images were recorded 60 min after injection of 925 MBq technetium-99m tetrofosmin on a three-head camera equipped with focussing collimators. Two acquisitions were made at rest (baseline 1 and 2), and the third and fourth acquisitions were started 5 min after the beginning of the infusion of 5 and 10 {mu}g kg{sup -1} min{sup -1} dobutamine, respectively. Systolic wall thickening (WT) was quantified using a method based on circumferential profile analysis. Left ventricular ejection fraction (LVEF) and volumes were calculated automatically using the Cedars-Sinai program. Nine of the ten subjects presented a definite increase in WT during dobutamine infusion. WT increased on average from 46%{+-}14% at baseline to 71%{+-}23% (range: 37%-106%; P<0.05) during 5 {mu}g kg{sup -1} min{sup -1} dobutamine infusion and to 85%{+-}25% (range: 62%-123%; P<0.05 with respect to WT at 5 {mu}g kg{sup -1} min{sup -1}) during 10 {mu}g kg{sup -1} min{sup -1} dobutamine infusion. Apical segments showed the largest WT at baseline. The average WT response to dobutamine was similar for all parts of the myocardium. It is concluded that changes in WT induced by infusion of low-dose dobutamine can be assessed by sequential gated SPET myocardial perfusion studies. The ''stress gated SPET'' protocol proposed in this study might be helpful to distinguish viable from scar tissue in patients with coronary artery disease, by demonstrating a preserved inotropic response in hypoperfused myocardium. (orig.)

  6. One-step implementation of a hybrid Fredkin gate with quantum memories and single superconducting qubit in circuit QED and its applications

    Science.gov (United States)

    Liu, Tong; Guo, Bao-Qing; Yu, Chang-Shui; Zhang, Wei-Ning

    2018-02-01

    In a recent remarkable experiment [R. B. Patel et al., Science advances 2, e1501531 (2016)], a 3-qubit quantum Fredkin (i.e., controlled-SWAP) gate was demonstrated by using linear optics. Here we propose a simple experimental scheme by utilizing the dispersive interaction in superconducting quantum circuit to implement a hybrid Fredkin gate with a superconducting flux qubit as the control qubit and two separated quantum memories as the target qudits. The quantum memories considered here are prepared by the superconducting coplanar waveguide resonators or nitrogen-vacancy center ensembles. In particular, it is shown that this Fredkin gate can be realized using a single-step operation and more importantly, each target qudit can be in an arbitrary state with arbitrary degrees of freedom. Furthermore, we show that this experimental scheme has many potential applications in quantum computation and quantum information processing such as generating arbitrary entangled states (discrete-variable states or continuous-variable states) of the two memories, measuring the fidelity and the entanglement between the two memories. With state-of-the-art circuit QED technology, the numerical simulation is performed to demonstrate that two-memory NOON states, entangled coherent states, and entangled cat states can be efficiently synthesized.

  7. Security and gain improvement of a practical quantum key distribution using a gated single-photon source and probabilistic photon-number resolution

    International Nuclear Information System (INIS)

    Horikiri, Tomoyuki; Sasaki, Hideki; Wang, Haibo; Kobayashi, Takayoshi

    2005-01-01

    We propose a high security quantum key distribution (QKD) scheme utilizing one mode of spontaneous parametric downconversion gated by a photon number resolving detector. This photon number measurement is possible by using single-photon detectors operating at room temperature and optical fibers. By post selection, the multiphoton probability in this scheme can be reduced to lower than that of a scheme using an attenuated coherent light resulting in improvement of security. Furthermore, if distillation protocol (error correction and privacy amplification) is performed, the gain will be increased. Hence a QKD system with higher security and bit rate than the laser-based QKD system can be attained using present available technologies

  8. Comparison of single point normalized and modified Gate's method for measurement of glomerular filtration rate by nuclear medicine

    International Nuclear Information System (INIS)

    Fonseca, L.M.B. da; Fonseca, N.M.; Martins, E.; Pereira, E.

    1992-01-01

    Glomerular filtration rate was measured in 22 patients (mean age 30 years) using a noninvasive modified Gates method and the results were compared to the one point normalized technique. The values obtained were 74-11.7 and 82-11.09 ml/min., respectively. The advantages of the method are its reliability, easy adaptation to small laboratories and the avoidance of blood and urine sampling. (author)

  9. Single Event Test Methodologies and System Error Rate Analysis for Triple Modular Redundant Field Programmable Gate Arrays

    Science.gov (United States)

    Allen, Gregory; Edmonds, Larry D.; Swift, Gary; Carmichael, Carl; Tseng, Chen Wei; Heldt, Kevin; Anderson, Scott Arlo; Coe, Michael

    2010-01-01

    We present a test methodology for estimating system error rates of Field Programmable Gate Arrays (FPGAs) mitigated with Triple Modular Redundancy (TMR). The test methodology is founded in a mathematical model, which is also presented. Accelerator data from 90 nm Xilins Military/Aerospace grade FPGA are shown to fit the model. Fault injection (FI) results are discussed and related to the test data. Design implementation and the corresponding impact of multiple bit upset (MBU) are also discussed.

  10. Tunnel field-effect transistor with two gated intrinsic regions

    Directory of Open Access Journals (Sweden)

    Y. Zhang

    2014-07-01

    Full Text Available In this paper, we propose and validate (using simulations a novel design of silicon tunnel field-effect transistor (TFET, based on a reverse-biased p+-p-n-n+ structure. 2D device simulation results show that our devices have significant improvements of switching performance compared with more conventional devices based on p-i-n structure. With independent gate voltages applied to two gated intrinsic regions, band-to-band tunneling (BTBT could take place at the p-n junction, and no abrupt degenerate doping profile is required. We developed single-side-gate (SSG structure and double-side-gate (DSG structure. SSG devices with HfO2 gate dielectric have a point subthreshold swing of 9.58 mV/decade, while DSG devices with polysilicon gate electrode material and HfO2 gate dielectric have a point subthreshold swing of 16.39 mV/decade. These DSG devices have ON-current of 0.255 μA/μm, while that is lower for SSG devices. Having two nano-scale independent gates will be quite challenging to realize with good uniformity across the wafer and the improved behavior of our TFET makes it a promising steep-slope switch candidate for further investigations.

  11. Upgrading the Center for Lightweighting Automotive Materials and Processing - a GATE Center of Excellence at the University of Michigan-Dearborn

    Energy Technology Data Exchange (ETDEWEB)

    Mallick, P. K.

    2012-08-30

    The Center for Lightweighting Materials and Processing (CLAMP) was established in September 1998 with a grant from the Department of Energy’s Graduate Automotive Technology Education (GATE) program. The center received the second round of GATE grant in 2005 under the title “Upgrading the Center for Lightweighting Automotive Materials and Processing”. Using the two grants, the Center has successfully created 10 graduate level courses on lightweight automotive materials, integrated them into master’s and PhD programs in Automotive Systems Engineering, and offered them regularly to the graduate students in the program. In addition, the Center has created a web-based lightweight automotive materials database, conducted research on lightweight automotive materials and organized seminars/symposia on lightweight automotive materials for both academia and industry. The faculty involved with the Center has conducted research on a variety of topics related to design, testing, characterization and processing of lightweight materials for automotive applications and have received numerous research grants from automotive companies and government agencies to support their research. The materials considered included advanced steels, light alloys (aluminum, magnesium and titanium) and fiber reinforced polymer composites. In some of these research projects, CLAMP faculty have collaborated with industry partners and students have used the research facilities at industry locations. The specific objectives of the project during the current funding period (2005 – 2012) were as follows: (1) develop new graduate courses and incorporate them in the automotive systems engineering curriculum (2) improve and update two existing courses on automotive materials and processing (3) upgrade the laboratory facilities used by graduate students to conduct research (4) expand the Lightweight Automotive Materials Database to include additional materials, design case studies and make it more

  12. Linear gate

    International Nuclear Information System (INIS)

    Suwono.

    1978-01-01

    A linear gate providing a variable gate duration from 0,40μsec to 4μsec was developed. The electronic circuity consists of a linear circuit and an enable circuit. The input signal can be either unipolar or bipolar. If the input signal is bipolar, the negative portion will be filtered. The operation of the linear gate is controlled by the application of a positive enable pulse. (author)

  13. Spin magneto-transport in a Rashba-Dresselhaus quantum channel with single and double finger gates

    Science.gov (United States)

    Tang, Chi-Shung; Keng, Jia-An; Abdullah, Nzar Rauf; Gudmundsson, Vidar

    2017-05-01

    We address spin-resolved electronic transport properties in a Rashba-Dresselhaus quantum channel in the presence of an in-plane magnetic field. The strong Rashba-Dresselhaus effect induces an asymmetric spin-splitting energy spectrum with a spin-orbit-Zeeman gap. This asymmetric fact in energy spectrum may result in various quantum dynamic features in conductance due to the presence of finger gates. This asymmetric spin-splitting energy spectrum results in a bound state in continuum for electrons within ultralow energy regime with binding energies in order of 10-1 meV.

  14. FoCuS-point: software for STED fluorescence correlation and time-gated single photon counting

    DEFF Research Database (Denmark)

    Waithe, Dominic; Clausen, Mathias P; Sezgin, Erdinc

    2016-01-01

    microscopy (STED-FCS). Specifically, the use of gated detection has shown great potential for enhancing STED-FCS, but has also created a demand for software which is efficient and also implements the latest algorithms. Prior to this study, no open software has been available which would allow practical time...... to be established quickly and efficiently. AVAILABILITY AND IMPLEMENTATION: FoCuS-point is written in python and is available through the github repository: https://github.com/dwaithe/FCS_point_correlator. Furthermore, compiled versions of the code are available as executables which can be run directly in Linux...

  15. Single-material Bragg reflectors and their applications in VCSELs

    Science.gov (United States)

    Choi, Hee Ju; Ju, Gun Wu; Song, Yong Min; Lee, Yong Tak

    2018-01-01

    We present single-material distributed Bragg reflectors (DBRs) fabricated by oblique-angle deposition of amorphous silicon (a-Si). The high and low refractive indices of a-Si films were obtained at two incident vapour flux angles ( θ α) of 0° and 80° by determining the quarter-wavelength thicknesses of 67 nm at 0° and 128 nm at 80°. The fabricated single-material Bragg reflectors with only five pairs provide high reflectivity values of over 95%. The proposed DBRs were applied to intra-cavity contacted vertical-cavity surface-emitting lasers (VCSELs) to reduce fabrication costs and step. For the fabricated five pair a-Si/a-Si DBRs on VCSELs, the normalized stop bandwidth of 31.63% was measured while high reflectivity values over 95% were maintained over a wide wavelength range of 710 - 1020 nm. The fabricated VCSELs with D a = 7 μm obtained output power and threshold current, which are reasonable measured results.

  16. Spin gating electrical current

    Science.gov (United States)

    Ciccarelli, C.; Zârbo, L. P.; Irvine, A. C.; Campion, R. P.; Gallagher, B. L.; Wunderlich, J.; Jungwirth, T.; Ferguson, A. J.

    2012-09-01

    The level of the chemical potential is a fundamental parameter of the electronic structure of a physical system, which consequently plays an important role in defining the properties of active electrical devices. We directly measure the chemical potential shift in the relativistic band structure of the ferromagnetic semiconductor (Ga,Mn)As, controlled by changes in its magnetic order parameter. Our device comprises a non-magnetic aluminum single electron channel capacitively coupled to the (Ga,Mn)As gate electrode. The chemical potential shifts of the gate are directly read out from the shifts in the Coulomb blockade oscillations of the single electron transistor. The experiments introduce a concept of spin gating electrical current. In our spin transistor spin manipulation is completely removed from the electrical current carrying channel.

  17. Contact effects analyzed by a parameter extraction method based on a single bottom-gate/top-contact organic thin-film transistor

    Science.gov (United States)

    Takagaki, Shunsuke; Yamada, Hirofumi; Noda, Kei

    2018-03-01

    Contact effects in organic thin-film transistors (OTFTs) were examined by using our previously proposed parameter extraction method from the electrical characteristics of a single staggered-type device. Gate-voltage-dependent contact resistance and channel mobility in the linear regime were evaluated for bottom-gate/top-contact (BGTC) pentacene TFTs with active layers of different thicknesses, and for pentacene TFTs with contact-doped layers prepared by coevaporation of pentacene and tetrafluorotetracyanoquinodimethane (F4TCNQ). The extracted parameters suggested that the influence of the contact resistance becomes more prominent with the larger active-layer thickness, and that contact-doping experiments give rise to a drastic decrease in the contact resistance and a concurrent considerable improvement in the channel mobility. Additionally, the estimated energy distributions of trap density in the transistor channel probably reflect the trap filling with charge carriers injected into the channel regions. The analysis results in this study confirm the effectiveness of our proposed method, with which we can investigate contact effects and circumvent the influences of characteristic variations in OTFT fabrication.

  18. Single material solar cells: the next frontier for organic photovoltaics?

    Energy Technology Data Exchange (ETDEWEB)

    Roncali, Jean [Group Linear Conjugated Systems, CNRS, Moltech-Anjou, UMR 6200, University of Angers, 2 Bd Lavoisier 49045 Angers (France)

    2011-03-18

    An overview of various approaches for the realization of single-material organic solar cells (SMOCs) is presented. Fullerene-conjugated systems dyads, di-block copolymers, and self-organized donor-acceptor molecules all represent different possible approaches towards SMOCs. Although each of them presents specific advantages and poses specific problems of design and synthesis, these different routes have witnessed significant progress in the past few years and SMOCs with efficiencies in the range of 1.50% have been realized. These performances are already higher than those of bi-component bulk heterojunction solar cells some ten years ago, demonstrating that SMOCs can represent a credible approach towards efficient and simple organic solar cells. Possible directions for future research are discussed with the aim of stimulating further research on this exciting topic. (Copyright copyright 2011 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim)

  19. Analytical modeling of linearly graded alloy material gate recessed ultra thin body source/drain SON MOSFET

    Science.gov (United States)

    Dutta, Pranab Kishore; Manna, Bibhas; Sarkar, Subir Kumar

    2015-01-01

    An explicit analytical model of surface potential profile and threshold voltage of work function engineered gate (WFEG) recessed source/drain (Re S/D) MOSFET has been presented in this paper. A two dimensional Poisson's equation has been solved with parabolic potential approximation to establish the expressions of front and back channel surface potential distribution and the threshold voltage has been derived from the minima of such obtained potential. In this work, the benefits of linearly graded binary alloy gate and recessed source/drain structures are expected to be available simultaneously in ultra short channel SOI/SON MOSFETs structures. Analytical results are compared with those obtained from the 2D MEDICI device simulator to validate our present model.

  20. Electrical and materials properties of ZrO2 gate dielectrics grown by atomic layer chemical vapor deposition

    Science.gov (United States)

    Perkins, Charles M.; Triplett, Baylor B.; McIntyre, Paul C.; Saraswat, Krishna C.; Haukka, Suvi; Tuominen, Marko

    2001-04-01

    Structural and electrical properties of gate stack structures containing ZrO2 dielectrics were investigated. The ZrO2 films were deposited by atomic layer chemical vapor deposition (ALCVD) after different substrate preparations. The structure, composition, and interfacial characteristics of these gate stacks were examined using cross-sectional transmission electron microscopy and x-ray photoelectron spectroscopy. The ZrO2 films were polycrystalline with either a cubic or tetragonal crystal structure. An amorphous interfacial layer with a moderate dielectric constant formed between the ZrO2 layer and the substrate during ALCVD growth on chemical oxide-terminated silicon. Gate stacks with a measured equivalent oxide thickness (EOT) of 1.3 nm showed leakage values of 10-5 A/cm2 at a bias of -1 V from flatband, which is significantly less than that seen with SiO2 dielectrics of similar EOT. A hysteresis of 8-10 mV was seen for ±2 V sweeps while a midgap interface state density (Dit) of ˜3×1011 states/cm eV was determined from comparisons of measured and ideal capacitance curves.

  1. Multi-valued logic circuits using hybrid circuit consisting of three gates single-electron transistors (TG-SETs) and MOSFETs.

    Science.gov (United States)

    Shin, SeungJun; Yu, YunSeop; Choi, JungBum

    2008-10-01

    New multi-valued logic (MVL) families using the hybrid circuits consisting of three gates single-electron transistors (TG-SETs) and a metal-oxide-semiconductor field-effect transistor (MOSFET) are proposed. The use of SETs offers periodic literal characteristics due to Coulomb oscillation of SET, which allows a realization of binary logic (BL) circuits as well as multi-valued logic (MVL) circuits. The basic operations of the proposed MVL families are successfully confirmed through SPICE circuit simulation based on the physical device model of a TG-SET. The proposed MVL circuits are found to be much faster, but much larger power consumption than a previously reported MVL, and they have a trade-off between speed and power consumption. As an example to apply the newly developed MVL families, a half-adder is introduced.

  2. Characterization of a time-resolved non-contact scanning diffuse optical imaging system exploiting fast-gated single-photon avalanche diode detection

    Energy Technology Data Exchange (ETDEWEB)

    Di Sieno, Laura, E-mail: laura.disieno@polimi.it; Dalla Mora, Alberto; Contini, Davide [Politecnico di Milano, Dipartimento di Fisica, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Wabnitz, Heidrun; Macdonald, Rainer [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Pifferi, Antonio [Politecnico di Milano, Dipartimento di Fisica, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Istituto di Fotonica e Nanotecnologie, Consiglio Nazionale delle Ricerche, Piazza Leonardo da Vinci 32, 20133 Milano (Italy); Mazurenka, Mikhail [Physikalisch-Technische Bundesanstalt (PTB), Abbestr. 2-12, 10587 Berlin (Germany); Hannoversches Zentrum für Optische Technologien, Nienburger Str. 17, 30167 Hannover (Germany); Hoshi, Yoko [Department of Biomedical Optics, Medical Photonics Research Center, Hamamatsu University School of Medicine, Hamamatsu 431-3192 (Japan); Boso, Gianluca; Tosi, Alberto [Politecnico di Milano, Dipartimento di Elettronica, Informazione e Bioingegneria, Piazza Leonardo Da Vinci 32, 20133 Milano (Italy); Becker, Wolfgang [Becker and Hickl GmbH, Nahmitzer Damm 30, 12277 Berlin (Germany); Martelli, Fabrizio [Dipartimento di Fisica e Astronomia dell’Università degli Studi di Firenze, Via G. Sansone 1, Sesto Fiorentino, Firenze 50019 (Italy)

    2016-03-15

    We present a system for non-contact time-resolved diffuse reflectance imaging, based on small source-detector distance and high dynamic range measurements utilizing a fast-gated single-photon avalanche diode. The system is suitable for imaging of diffusive media without any contact with the sample and with a spatial resolution of about 1 cm at 1 cm depth. In order to objectively assess its performances, we adopted two standardized protocols developed for time-domain brain imagers. The related tests included the recording of the instrument response function of the setup and the responsivity of its detection system. Moreover, by using liquid turbid phantoms with absorbing inclusions, depth-dependent contrast and contrast-to-noise ratio as well as lateral spatial resolution were measured. To illustrate the potentialities of the novel approach, the characteristics of the non-contact system are discussed and compared to those of a fiber-based brain imager.

  3. Robust logic gates and realistic quantum computation

    International Nuclear Information System (INIS)

    Xiao Li; Jones, Jonathan A.

    2006-01-01

    The composite rotation approach has been used to develop a range of robust quantum logic gates, including single qubit gates and two qubit gates, which are resistant to systematic errors in their implementation. Single qubit gates based on the BB1 family of composite rotations have been experimentally demonstrated in a variety of systems, but little study has been made of their application in extended computations, and there has been no experimental study of the corresponding robust two qubit gates to date. Here we describe an application of robust gates to nuclear magnetic resonance studies of approximate quantum counting. We find that the BB1 family of robust gates is indeed useful, but that the related NB1, PB1, B4, and P4 families of tailored logic gates are less useful than initially expected

  4. Positive impedance humidity sensors via single-component materials.

    Science.gov (United States)

    Qian, Jingwen; Peng, Zhijian; Shen, Zhenguang; Zhao, Zengying; Zhang, Guoliang; Fu, Xiuli

    2016-05-06

    Resistivity-type humidity sensors have been investigated with great interest due to the increasing demands in industry, agriculture and daily life. To date, most of the available humidity sensors have been fabricated based on negative humidity impedance, in which the electrical resistance decreases as the humidity increases, and only several carbon composites have been reported to present positive humidity impedance. However, here we fabricate positive impedance humidity sensors only via single-component WO3-x crystals. The resistance of WO3-x crystal sensors in response to relative humidity could be tuned from a negative to positive one by increasing the compositional x. And it was revealed that the positive humidity impedance was driven by the defects of oxygen vacancy. This result will extend the application field of humidity sensors, because the positive humidity impedance sensors would be more energy-efficient, easier to be miniaturized and electrically safer than their negative counterparts for their lower operation voltages. And we believe that constructing vacancies in semiconducting materials is a universal way to fabricate positive impedance humidity sensors.

  5. Gated 99mTc-MIBI single-photon emission computed tomography for the evaluation of left ventricular ejection fraction. Comparison with three-dimensional echocardiography

    International Nuclear Information System (INIS)

    Lipiec, P.; Wejner-Mik, P.; Krzeminska-Pakula, M.; Kapusta, A.; Kasprzak, J.D.; Kusmierek, J.; Plachcinska, A.; Szuminski, R.

    2008-01-01

    Parameters of left ventricular systolic function directly influence the management of patients with suspected coronary artery disease (CAD). Quantitative gated single-photon emission computed tomography (QGS; Cedars-Sinai Medical Center, Los Angeles, CA, USA) allows the computation of left ventricular ejection fraction (LVEF) from myocardial perfusion imaging studies which are frequently performed on patients with suspected CAD. Three-dimensional (3D) echocardiography is considered to be the echocardiographic ''gold standard'' for the quantification of LVEF. We sought to compare QGS with 3D echocardiography in the evaluation of EF in patients with suspected CAD. Ninety-one consecutive patients with suspected CAD, scheduled for coronary angiography, underwent rest electrocardiographic-gated technetium-99m methoxyisobutylisonitrile SPECT (G-SPECT) with measurement of LVEF by QGS and transthoracic 3D echocardiography with off-line measurement of LVEF (Tomtec 4D LV Analysis 1.1). The diagnosis of CAD was based on coronary angiography, performed on every patient. Nine patients were excluded from the analysis owing to unsuitability for 3D echocardiography (8 patients) or G-SPECT (1 patient). In the remaining group of 82 patients, 71 (87%) had significant CAD, 34 (42%) had a history of myocardial infarction, and 50 (61%) had perfusion defects at rest G-SPECT images. The mean LVEF measured by QGS and 3D echocardiography was 53±13% and 53±10%, respectively. The mean difference in LVEF between 3D echocardiography and QGS was 0.1±6.0% (P=0.87), and the correlation between the values obtained by both methods was high (r=0.88, P< 0.001). The largest discrepancies were observed in patients with small ventricular volumes. In patients undergoing diagnostic work-up for CAD, the measurement of LVEF by QGS algorithm provides high correlation and satisfactory agreement with the results of reference ultrasound method- 3D echocardiography. (author)

  6. Oligo- and polymeric FET devices: Thiophene-based active materials and their interaction with different gate dielectrics

    International Nuclear Information System (INIS)

    Porzio, W.; Destri, S.; Pasini, M.; Bolognesi, A.; Angiulli, A.; Di Gianvincenzo, P.; Natali, D.; Sampietro, M.; Caironi, M.; Fumagalli, L.; Ferrari, S.; Peron, E.; Perissinotti, F.

    2006-01-01

    Derivatives of both oligo- and polythiophene-based FET were recently considered for low cost electronic applications. In the device optimization, factors like redox reversibility of the molecule/polymer, electronic level compatibility with source/drain electrodes, packing closeness, and orientation versus the electrodes, can determine the overall performance. In addition, a gate insulator with a high dielectric constant, a low leakage current, and capability to promote ordering in the semiconductor is required to increase device performances and to lower the FET operating voltage. In this view, Al 2 O 3 appears a good candidate, although its widespread adoption is limited by the disorder that such oxide induces on the semiconductor with detrimental consequences on semiconductor electrical properties. In this contribution, an overview of recent results obtained on thiophene-derivative-based FET devices, fabricated by different growth techniques, and using both thermally grown SiO 2 and Al 2 O 3 from atomic layer deposition gate insulators will be reported and discussed with particular reference to organic solid state aggregation, morphology, and organic-inorganic interface

  7. Gating kinetics of batrachotoxin-modified sodium channels in neuroblastoma cells determined from single-channel measurements

    OpenAIRE

    Huang, L.Y.; Moran, N.; Ehrenstein, G.

    1984-01-01

    We have observed the opening and closing of single batrachotoxin (BTX)-modified sodium channels in neuroblastoma cells using the patch-clamp method. The conductance of a single BTX-modified channel is approximately 10 pS. At a given membrane potential, the channels are open longer than are normal sodium channels. As is the case for normal sodium channels, the open dwell times become longer as the membrane is depolarized. For membrane potentials more negative than about -70 mV, histograms of b...

  8. Incremental value of regional wall motion analysis immediately after exercise for the detection of single-vessel coronary artery disease. Study by separate acquisition, dual-isotope ECG-gated single-photon emission computed tomography

    International Nuclear Information System (INIS)

    Yoda, Shunichi; Sato, Yuichi; Matsumoto, Naoya; Tani, Shigemasa; Takayama, Tadateru; Uchiyama, Takahisa; Saito, Satoshi

    2005-01-01

    Although the detection of wall motion abnormalities gives incremental value to myocardial perfusion single-photon emission computed tomography (SPECT) in the diagnosis of extensive coronary artery disease (CAD) and high-grade single-vessel CAD, whether or not it is useful in the diagnosis of mild, single-vessel CAD has not been studied previously. Separate acquisition, dual isotope electrocardiogram (ECG)-gated SPECT was performed in 97 patients with a low likelihood of CAD (Group 1) and 46 patients with single-vessel CAD (Group 2). Mild CAD was defined by stenosis of 50-75% (Group 2a, n=22) and moderate to severe CAD was defined by stenosis ≥76% (Group 2b, n=24). Myocardial perfusion and wall motion were graded by a 5 point-scale, 20-segment model. The sensitivity of myocardial perfusion alone was 50% for Group 2a, 83% for Group 2b and 67% for Group 2 as a whole. The overall specificity was 90%. When the wall motion analysis was combined, the sensitivity was increased to 82% in Group 2a and 92% in Group 2b. The ability to detect a wall motion abnormality immediately after exercise gives incremental diagnostic value to myocardial perfusion SPECT in the identification of mild, single-vessel CAD. (author)

  9. High-performance flexible photodetectors based on GaTe nanosheets

    Science.gov (United States)

    Wang, Zhenxing; Safdar, Muhammad; Mirza, Misbah; Xu, Kai; Wang, Qisheng; Huang, Yun; Wang, Fengmei; Zhan, Xueying; He, Jun

    2015-04-01

    2D layered GaTe materials have attracted a great deal of attention for optoelectronic applications due to their direct band structure, whether in bulk or as a single layer. In this paper, for the first time, we have synthesized high quality, single crystalline GaTe nanosheets by employing a facile CVD method. The size of the GaTe nanosheets reached several tens of micrometers, and some of them even exceeded 100 μm. In particular, planar GaTe nanosheets were achieved on a mica substrate following a van der Waals epitaxial growth mechanism. Further, through a systematic comparison of the performances under various conditions, we found that adsorbates on the GaTe surface under ambient conditions strongly deteriorated the GaTe photodetector device performance. After removing the adsorbates in a ~7 × 10-5 torr vacuum, a flexible, fast response GaTe photodetector with a high photoresponse, high mechanical stability and an excellent linear input-output relationship was obtained. The results presented in this study suggest that the GaTe nanosheets grown by a CVD method are promising candidates for optoelectronic applications in the future.

  10. GATE: Improving the computational efficiency

    Energy Technology Data Exchange (ETDEWEB)

    Staelens, S. [UGent-ELIS, St-Pietersnieuwstraat, 41, B-9000 Gent (Belgium)]. E-mail: steven.staelens@ugent.be; De Beenhouwer, J. [UGent-ELIS, St-Pietersnieuwstraat, 41, B-9000 Gent (Belgium); Kruecker, D. [Institute of Medicine-Forschungszemtrum Juelich, D-52425 Juelich (Germany); Maigne, L. [Departement de Curietherapie-Radiotherapie, Centre Jean Perrin, F-63000 Clermont-Ferrand (France); Rannou, F. [Departamento de Ingenieria Informatica, Universidad de Santiago de Chile, Santiago (Chile); Ferrer, L. [INSERM U601, CHU Nantes, F-44093 Nantes (France); D' Asseler, Y. [UGent-ELIS, St-Pietersnieuwstraat, 41, B-9000 Gent (Belgium); Buvat, I. [INSERM U678 UPMC, CHU Pitie-Salpetriere, F-75634 Paris (France); Lemahieu, I. [UGent-ELIS, St-Pietersnieuwstraat, 41, B-9000 Gent (Belgium)

    2006-12-20

    GATE is a software dedicated to Monte Carlo simulations in Single Photon Emission Computed Tomography (SPECT) and Positron Emission Tomography (PET). An important disadvantage of those simulations is the fundamental burden of computation time. This manuscript describes three different techniques in order to improve the efficiency of those simulations. Firstly, the implementation of variance reduction techniques (VRTs), more specifically the incorporation of geometrical importance sampling, is discussed. After this, the newly designed cluster version of the GATE software is described. The experiments have shown that GATE simulations scale very well on a cluster of homogeneous computers. Finally, an elaboration on the deployment of GATE on the Enabling Grids for E-Science in Europe (EGEE) grid will conclude the description of efficiency enhancement efforts. The three aforementioned methods improve the efficiency of GATE to a large extent and make realistic patient-specific overnight Monte Carlo simulations achievable.

  11. GATE: Improving the computational efficiency

    International Nuclear Information System (INIS)

    Staelens, S.; De Beenhouwer, J.; Kruecker, D.; Maigne, L.; Rannou, F.; Ferrer, L.; D'Asseler, Y.; Buvat, I.; Lemahieu, I.

    2006-01-01

    GATE is a software dedicated to Monte Carlo simulations in Single Photon Emission Computed Tomography (SPECT) and Positron Emission Tomography (PET). An important disadvantage of those simulations is the fundamental burden of computation time. This manuscript describes three different techniques in order to improve the efficiency of those simulations. Firstly, the implementation of variance reduction techniques (VRTs), more specifically the incorporation of geometrical importance sampling, is discussed. After this, the newly designed cluster version of the GATE software is described. The experiments have shown that GATE simulations scale very well on a cluster of homogeneous computers. Finally, an elaboration on the deployment of GATE on the Enabling Grids for E-Science in Europe (EGEE) grid will conclude the description of efficiency enhancement efforts. The three aforementioned methods improve the efficiency of GATE to a large extent and make realistic patient-specific overnight Monte Carlo simulations achievable

  12. NASA Electronic Parts and Packaging (NEPP) Field Programmable Gate Array (FPGA) Single Event Effects (SEE) Test Guideline Update

    Science.gov (United States)

    Berg, Melanie D.; LaBel, Kenneth A.

    2018-01-01

    The following are updated or new subjects added to the FPGA SEE Test Guidelines manual: academic versus mission specific device evaluation, single event latch-up (SEL) test and analysis, SEE response visibility enhancement during radiation testing, mitigation evaluation (embedded and user-implemented), unreliable design and its affects to SEE Data, testing flushable architectures versus non-flushable architectures, intellectual property core (IP Core) test and evaluation (addresses embedded and user-inserted), heavy-ion energy and linear energy transfer (LET) selection, proton versus heavy-ion testing, fault injection, mean fluence to failure analysis, and mission specific system-level single event upset (SEU) response prediction. Most sections within the guidelines manual provide information regarding best practices for test structure and test system development. The scope of this manual addresses academic versus mission specific device evaluation and visibility enhancement in IP Core testing.

  13. Volatile and Nonvolatile Characteristics of Asymmetric Dual-Gate Thyristor RAM with Vertical Structure.

    Science.gov (United States)

    Kim, Hyun-Min; Kwon, Dae Woong; Kim, Sihyun; Lee, Kitae; Lee, Junil; Park, Euyhwan; Lee, Ryoongbin; Kim, Hyungjin; Kim, Sangwan; Park, Byung-Gook

    2018-09-01

    In this paper, the volatile and nonvolatile characteristics of asymmetric dual-gate thyristor random access memory (TRAM) are investigated using the technology of a computer-aided design (TCAD) simulation. Owing to the use of two independent gates having different gate dielectric layers, volatile and nonvolatile memory functions can be realized in a single device. The first gate with a silicon oxide layer controls the one-transistor dynamic random access memory (1T-DRAM) characteristics of the device. From the simulation results, a rapid write speed (107) can be achieved. The second gate, whose dielectric material is composed of oxide/nitride/oxide (O/N/O) layers, is used to implement the nonvolatile property by trapping charges in the nitride layer. In addition, this offers an advantage when processing the 3D-stack memory application, as the device has a vertical channel structure with polycrystalline silicon.

  14. Spin gated transistors for reprogrammable logic

    Science.gov (United States)

    Ciccarelli, Chiara; Gonzalez-Zalba, Fernando; Irvine, Andrew; Campion, Richard; Zarbo, Liviu; Gallagher, Brian; Ferguson, Andrew; Jungwirth, Tomas; Wunderlich, Joerg; Institute of Physics ASCR Collaboration; University of Nottingham Collaboration; Hitachi Cambridge Laboratory Team; Institute of Physics ASCR Collaboration; University of Nottingham Collaboration; University of Cambridge Team

    2014-03-01

    In spin-orbit coupled magnetic materials the chemical potential depends on the orientation of the magnetisation. By making the gate of a field effect transistor magnetic, it is possible to tune the channel conductance not only electrically but also magnetically. We show that these magnetic transistor can be used to realise non-volatile reprogrammable Boolean logic. The non-volatile reconfigurable capability resides in the magnetization-dependent band structure of the magnetic stack. A change in magnetization orientation produces a change in the electrochemical potential, which induces a charge accumulation in the correspondent gate electrode. This is readily sensed by a field-effect device such as standard field-effect transistors or more exotic single-electron transistors. We propose circuits for low power consumption applications that can be magnetically switched between NAND and OR logic functions and between NOR and AND logic functions.

  15. Can multi-slice or navigator-gated R2* MRI replace single-slice breath-hold acquisition for hepatic iron quantification?

    Energy Technology Data Exchange (ETDEWEB)

    Loeffler, Ralf B.; McCarville, M.B.; Song, Ruitian; Hillenbrand, Claudia M. [St. Jude Children' s Research Hospital, Diagnostic Imaging, Memphis, TN (United States); Wagstaff, Anne W. [St. Jude Children' s Research Hospital, Diagnostic Imaging, Memphis, TN (United States); Rhodes College, Memphis, TN (United States); University of Alabama at Birmingham School of Medicine, Birmingham, AL (United States); Smeltzer, Matthew P. [St. Jude Children' s Research Hospital, Department of Biostatistics, Memphis, TN (United States); University of Memphis, Division of Epidemiology, Biostatistics, and Environmental Health, School of Public Health, Memphis, TN (United States); Krafft, Axel J. [St. Jude Children' s Research Hospital, Diagnostic Imaging, Memphis, TN (United States); University Hospital Center Freiburg, Department of Radiology, Freiburg (Germany); Hankins, Jane S. [St. Jude Children' s Research Hospital, Department of Hematology, Memphis, TN (United States)

    2017-01-15

    Liver R2* values calculated from multi-gradient echo (mGRE) magnetic resonance images (MRI) are strongly correlated with hepatic iron concentration (HIC) as shown in several independently derived biopsy calibration studies. These calibrations were established for axial single-slice breath-hold imaging at the location of the portal vein. Scanning in multi-slice mode makes the exam more efficient, since whole-liver coverage can be achieved with two breath-holds and the optimal slice can be selected afterward. Navigator echoes remove the need for breath-holds and allow use in sedated patients. To evaluate if the existing biopsy calibrations can be applied to multi-slice and navigator-controlled mGRE imaging in children with hepatic iron overload, by testing if there is a bias-free correlation between single-slice R2* and multi-slice or multi-slice navigator controlled R2*. This study included MRI data from 71 patients with transfusional iron overload, who received an MRI exam to estimate HIC using gradient echo sequences. Patient scans contained 2 or 3 of the following imaging methods used for analysis: single-slice images (n = 71), multi-slice images (n = 69) and navigator-controlled images (n = 17). Small and large blood corrected region of interests were selected on axial images of the liver to obtain R2* values for all data sets. Bland-Altman and linear regression analysis were used to compare R2* values from single-slice images to those of multi-slice images and navigator-controlled images. Bland-Altman analysis showed that all imaging method comparisons were strongly associated with each other and had high correlation coefficients (0.98 ≤ r ≤ 1.00) with P-values ≤0.0001. Linear regression yielded slopes that were close to 1. We found that navigator-gated or breath-held multi-slice R2* MRI for HIC determination measures R2* values comparable to the biopsy-validated single-slice, single breath-hold scan. We conclude that these three R2* methods can be

  16. Can multi-slice or navigator-gated R2* MRI replace single-slice breath-hold acquisition for hepatic iron quantification?

    International Nuclear Information System (INIS)

    Loeffler, Ralf B.; McCarville, M.B.; Song, Ruitian; Hillenbrand, Claudia M.; Wagstaff, Anne W.; Smeltzer, Matthew P.; Krafft, Axel J.; Hankins, Jane S.

    2017-01-01

    Liver R2* values calculated from multi-gradient echo (mGRE) magnetic resonance images (MRI) are strongly correlated with hepatic iron concentration (HIC) as shown in several independently derived biopsy calibration studies. These calibrations were established for axial single-slice breath-hold imaging at the location of the portal vein. Scanning in multi-slice mode makes the exam more efficient, since whole-liver coverage can be achieved with two breath-holds and the optimal slice can be selected afterward. Navigator echoes remove the need for breath-holds and allow use in sedated patients. To evaluate if the existing biopsy calibrations can be applied to multi-slice and navigator-controlled mGRE imaging in children with hepatic iron overload, by testing if there is a bias-free correlation between single-slice R2* and multi-slice or multi-slice navigator controlled R2*. This study included MRI data from 71 patients with transfusional iron overload, who received an MRI exam to estimate HIC using gradient echo sequences. Patient scans contained 2 or 3 of the following imaging methods used for analysis: single-slice images (n = 71), multi-slice images (n = 69) and navigator-controlled images (n = 17). Small and large blood corrected region of interests were selected on axial images of the liver to obtain R2* values for all data sets. Bland-Altman and linear regression analysis were used to compare R2* values from single-slice images to those of multi-slice images and navigator-controlled images. Bland-Altman analysis showed that all imaging method comparisons were strongly associated with each other and had high correlation coefficients (0.98 ≤ r ≤ 1.00) with P-values ≤0.0001. Linear regression yielded slopes that were close to 1. We found that navigator-gated or breath-held multi-slice R2* MRI for HIC determination measures R2* values comparable to the biopsy-validated single-slice, single breath-hold scan. We conclude that these three R2* methods can be

  17. Implementation of Basic and Universal Gates In a single Circuit Based On Quantum-dot Cellular Automata Using Multi-Layer Crossbar Wire

    Science.gov (United States)

    Bhowmik, Dhrubajyoti; Saha, Apu Kr; Dutta, Paramartha; Nandi, Supratim

    2017-08-01

    Quantum-dot Cellular Automata (QCA) is one of the most substitutes developing nanotechnologies for electronic circuits, as a result of lower force utilization, higher speed and smaller size in correlation with CMOS innovation. The essential devices, a Quantum-dot cell can be utilized to logic gates and wires. As it is the key building block on nanotechnology circuits. By applying simple gates, the hardware requirements for a QCA circuit can be decreased and circuits can be less complex as far as level, delay and cell check. This article exhibits an unobtrusive methodology for actualizing novel upgraded simple and universal gates, which can be connected to outline numerous variations of complex QCA circuits. Proposed gates are straightforward in structure and capable as far as implementing any digital circuits. The main aim is to build all basic and universal gates in a simple circuit with and without crossbar-wire. Simulation results and physical relations affirm its handiness in actualizing each advanced circuit.

  18. Hybrid ECG-gated versus non-gated 512-slice CT angiography of the aorta and coronary artery: image quality and effect of a motion correction algorithm.

    Science.gov (United States)

    Lee, Ji Won; Kim, Chang Won; Lee, Geewon; Lee, Han Cheol; Kim, Sang-Pil; Choi, Bum Sung; Jeong, Yeon Joo

    2018-02-01

    Background Using the hybrid electrocardiogram (ECG)-gated computed tomography (CT) technique, assessment of entire aorta, coronary arteries, and aortic valve can be possible using single-bolus contrast administration within a single acquisition. Purpose To compare the image quality of hybrid ECG-gated and non-gated CT angiography of the aorta and evaluate the effect of a motion correction algorithm (MCA) on coronary artery image quality in a hybrid ECG-gated aorta CT group. Material and Methods In total, 104 patients (76 men; mean age = 65.8 years) prospectively randomized into two groups (Group 1 = hybrid ECG-gated CT; Group 2 = non-gated CT) underwent wide-detector array aorta CT. Image quality, assessed using a four-point scale, was compared between the groups. Coronary artery image quality was compared between the conventional reconstruction and motion correction reconstruction subgroups in Group 1. Results Group 1 showed significant advantages over Group 2 in aortic wall, cardiac chamber, aortic valve, coronary ostia, and main coronary arteries image quality (all P ECG-gated CT significantly improved the heart and aortic wall image quality and the MCA can further improve the image quality and interpretability of coronary arteries.

  19. Nonvolatile ferroelectric memory based on PbTiO3 gated single-layer MoS2 field-effect transistor

    Science.gov (United States)

    Shin, Hyun Wook; Son, Jong Yeog

    2018-01-01

    We fabricated ferroelectric non-volatile random access memory (FeRAM) based on a field effect transistor (FET) consisting of a monolayer MoS2 channel and a ferroelectric PbTiO3 (PTO) thin film of gate insulator. An epitaxial PTO thin film was deposited on a Nb-doped SrTiO3 (Nb:STO) substrate via pulsed laser deposition. A monolayer MoS2 sheet was exfoliated from a bulk crystal and transferred to the surface of the PTO/Nb:STO. Structural and surface properties of the PTO thin film were characterized by X-ray diffraction and atomic force microscopy, respectively. Raman spectroscopy analysis was performed to identify the single-layer MoS2 sheet on the PTO/Nb:STO. We obtained mobility value (327 cm2/V·s) of the MoS2 channel at room temperature. The MoS2-PTO FeRAM FET showed a wide memory window with 17 kΩ of resistance variation which was attributed to high remnant polarization of the epitaxially grown PTO thin film. According to the fatigue resistance test for the FeRAM FET, however, the resistance states gradually varied during the switching cycles of 109. [Figure not available: see fulltext.

  20. Transcriptome-Wide Single Nucleotide Polymorphisms (SNPs for Abalone (Haliotis midae: Validation and Application Using GoldenGate Medium-Throughput Genotyping Assays

    Directory of Open Access Journals (Sweden)

    Rouvay Roodt-Wilding

    2013-09-01

    Full Text Available Haliotis midae is one of the most valuable commercial abalone species in the world, but is highly vulnerable, due to exploitation, habitat destruction and predation. In order to preserve wild and cultured stocks, genetic management and improvement of the species has become crucial. Fundamental to this is the availability and employment of molecular markers, such as microsatellites and Single Nucleotide Polymorphisms (SNPs . Transcriptome sequences generated through sequencing-by-synthesis technology were utilized for the in vitro and in silico identification of 505 putative SNPs from a total of 316 selected contigs. A subset of 234 SNPs were further validated and characterized in wild and cultured abalone using two Illumina GoldenGate genotyping assays. Combined with VeraCode technology, this genotyping platform yielded a 65%−69% conversion rate (percentage polymorphic markers with a global genotyping success rate of 76%−85% and provided a viable means for validating SNP markers in a non-model species. The utility of 31 of the validated SNPs in population structure analysis was confirmed, while a large number of SNPs (174 were shown to be informative and are, thus, good candidates for linkage map construction. The non-synonymous SNPs (50 located in coding regions of genes that showed similarities with known proteins will also be useful for genetic applications, such as the marker-assisted selection of genes of relevance to abalone aquaculture.

  1. Photoconversion of organic materials into single-cell protein

    Energy Technology Data Exchange (ETDEWEB)

    Weaver, P.F.

    1991-12-31

    A process is described for converting organic materials (such as biomass wastes) into sterile, high-grade bacterial protein suitable for use an animal feed or human food supplements. In a preferred embodiment the process involves thermally gasifying the organic material into primarily carbon monoxide, hydrogen and nitrogen products, followed by photosynthetic bacterial assimilation of the gases into cell material, which can be high as 65% protein. The process is ideally suited for waste recycling and for food production under zero-gravity or extra-terrestrial conditions.

  2. Theoretical investigations of single particle spectroscopies of novel materials

    Energy Technology Data Exchange (ETDEWEB)

    Randeria, Mohit [The Ohio State Univ., Columbus, OH (United States)

    2017-02-24

    The project focused on three areas in the theoretical investigation of quantum materials. The first was novel magnetism in low dimensional systems, especially chiral magnetism and topological spin textures that can arise in thin films and at interfaces. The second related to high temperature superconductivity, and particularly on understanding puzzling features of quantum oscillations. The third related to collaborations with experimentalists on angle-resolved photoemission spectroscopy of high Tc superconductors and charge density wave materials.

  3. Gate valve performance prediction

    International Nuclear Information System (INIS)

    Harrison, D.H.; Damerell, P.S.; Wang, J.K.; Kalsi, M.S.; Wolfe, K.J.

    1994-01-01

    The Electric Power Research Institute is carrying out a program to improve the performance prediction methods for motor-operated valves. As part of this program, an analytical method to predict the stem thrust required to stroke a gate valve has been developed and has been assessed against data from gate valve tests. The method accounts for the loads applied to the disc by fluid flow and for the detailed mechanical interaction of the stem, disc, guides, and seats. To support development of the method, two separate-effects test programs were carried out. One test program determined friction coefficients for contacts between gate valve parts by using material specimens in controlled environments. The other test program investigated the interaction of the stem, disc, guides, and seat using a special fixture with full-sized gate valve parts. The method has been assessed against flow-loop and in-plant test data. These tests include valve sizes from 3 to 18 in. and cover a considerable range of flow, temperature, and differential pressure. Stem thrust predictions for the method bound measured results. In some cases, the bounding predictions are substantially higher than the stem loads required for valve operation, as a result of the bounding nature of the friction coefficients in the method

  4. A single-component liquid-phase hydrogen storage material.

    Science.gov (United States)

    Luo, Wei; Campbell, Patrick G; Zakharov, Lev N; Liu, Shih-Yuan

    2011-12-07

    The current state-of-the-art for hydrogen storage is compressed H(2) at 700 bar. The development of a liquid-phase hydrogen storage material has the potential to take advantage of the existing liquid-based distribution infrastructure. We describe a liquid-phase hydrogen storage material that is a liquid under ambient conditions (i.e., at 20 °C and 1 atm pressure), air- and moisture-stable, and recyclable; releases H(2) controllably and cleanly at temperatures below or at the proton exchange membrane fuel cell waste-heat temperature of 80 °C; utilizes catalysts that are cheap and abundant for H(2) desorption; features reasonable gravimetric and volumetric storage capacity; and does not undergo a phase change upon H(2) desorption. © 2011 American Chemical Society

  5. Validation of the Gate simulation platform in single photon emission computed tomography and application to the development of a complete 3-dimensional reconstruction algorithm; Validation de la plate-forme de simulation GATE en tomographie a emission monophotonique et application au developpement d'un algorithme de reconstruction 3D complete

    Energy Technology Data Exchange (ETDEWEB)

    Lazaro, D

    2003-10-01

    Monte Carlo simulations are currently considered in nuclear medical imaging as a powerful tool to design and optimize detection systems, and also to assess reconstruction algorithms and correction methods for degrading physical effects. Among the many simulators available, none of them is considered as a standard in nuclear medical imaging: this fact has motivated the development of a new generic Monte Carlo simulation platform (GATE), based on GEANT4 and dedicated to SPECT/PET (single photo emission computed tomography / positron emission tomography) applications. We participated during this thesis to the development of the GATE platform within an international collaboration. GATE was validated in SPECT by modeling two gamma cameras characterized by a different geometry, one dedicated to small animal imaging and the other used in a clinical context (Philips AXIS), and by comparing the results obtained with GATE simulations with experimental data. The simulation results reproduce accurately the measured performances of both gamma cameras. The GATE platform was then used to develop a new 3-dimensional reconstruction method: F3DMC (fully 3-dimension Monte-Carlo) which consists in computing with Monte Carlo simulation the transition matrix used in an iterative reconstruction algorithm (in this case, ML-EM), including within the transition matrix the main physical effects degrading the image formation process. The results obtained with the F3DMC method were compared to the results obtained with three other more conventional methods (FBP, MLEM, MLEMC) for different phantoms. The results of this study show that F3DMC allows to improve the reconstruction efficiency, the spatial resolution and the signal to noise ratio with a satisfactory quantification of the images. These results should be confirmed by performing clinical experiments and open the door to a unified reconstruction method, which could be applied in SPECT but also in PET. (author)

  6. Fluorescent single walled nanotube/silica composite materials

    Science.gov (United States)

    Dattelbaum, Andrew M.; Gupta, Gautam; Duque, Juan G.; Doorn, Stephen K.; Hamilton, Christopher E.; DeFriend Obrey, Kimberly A.

    2013-03-12

    Fluorescent composites of surfactant-wrapped single-walled carbon nanotubes (SWNTs) were prepared by exposing suspensions of surfactant-wrapped carbon nanotubes to tetramethylorthosilicate (TMOS) vapor. Sodium deoxycholate (DOC) and sodium dodecylsulphate (SDS) were the surfactants. No loss in emission intensity was observed when the suspension of DOC-wrapped SWNTs were exposed to the TMOS vapors, but about a 50% decrease in the emission signal was observed from the SDS-wrapped SWNTs nanotubes. The decrease in emission was minimal by buffering the SDS/SWNT suspension prior to forming the composite. Fluorescent xerogels were prepared by adding glycerol to the SWNT suspensions prior to TMOS vapor exposure, followed by drying the gels. Fluorescent aerogels were prepared by replacing water in the gels with methanol and then exposing them to supercritical fluid drying conditions. The aerogels can be used for gas sensing.

  7. High-Resolution Single-Grain Diffraction of Polycrystalline Materials

    DEFF Research Database (Denmark)

    Lienert, Ulrich; Ribárik, Gábor; Ungar, Tamas

    2017-01-01

    . The microstructure usually influences the materials properties critically. It has been demonstrated that, by using high-energy synchrotron radiation, diffraction peaks off individual grains can be recorded in-situ during processing. Important information such as the orientation, average strain, and size...... of individual grains can be obtained, even if the peak shapes are commonly not analyzed. However, it is also well-known that the shape of diffraction peaks, if observed with sufficient resolution, contains significant information about the microstructure. While the intensity distribution in reciprocal space...... of a perfect lattice consists of delta functions located at the reciprocal lattice points, defects induce characteristic peak broadening. In order to exploit the wealth of microstructural information contained in broadened diffraction peaks, the intensity distribution has to be characterized in all three...

  8. Steam explosion studies with single drops of molten refractory materials

    International Nuclear Information System (INIS)

    Nelson, L.S.

    1980-01-01

    Laser heating, levitation melting, and metal combustion were used to prepare individual drops of molten refractory materials which simulate LWR fuel melt products. Drop temperatures ranged from approx. = 1500 to > 3000K. These drops, several millimeters in diameter, were injected into water and subjected to pressure transients (approx. = 1MPa peak pressures) generated by a submerged exploding bridgewire. Molten oxides of Fe, Al and Zr could be induced to explode with bridgewire initiation. High speed films showed the explosions with exceptional clarity, and pressure transducer records could be correlated with individual frames in the films. Pressure spikes one or two MPa high were generated whenever an explosion occurred. Debris particles were mostly spheroidal, with diameters in the range 10 to 1000 μm

  9. Coronary CT angiography with single-source and dual-source CT: comparison of image quality and radiation dose between prospective ECG-triggered and retrospective ECG-gated protocols.

    Science.gov (United States)

    Sabarudin, Akmal; Sun, Zhonghua; Yusof, Ahmad Khairuddin Md

    2013-09-30

    This study is conducted to investigate and compare image quality and radiation dose between prospective ECG-triggered and retrospective ECG-gated coronary CT angiography (CCTA) with the use of single-source CT (SSCT) and dual-source CT (DSCT). A total of 209 patients who underwent CCTA with suspected coronary artery disease scanned with SSCT (n=95) and DSCT (n=114) scanners using prospective ECG-triggered and retrospective ECG-gated protocols were recruited from two institutions. The image was assessed by two experienced observers, while quantitative assessment was performed by measuring the image noise, the signal-to-noise ratio (SNR) and the contrast-to-noise ratio (CNR). Effective dose was calculated using the latest published conversion coefficient factor. A total of 2087 out of 2880 coronary artery segments were assessable, with 98.0% classified as of sufficient and 2.0% as of insufficient image quality for clinical diagnosis. There was no significant difference in overall image quality between prospective ECG-triggered and retrospective gated protocols, whether it was performed with DSCT or SSCT scanners. Prospective ECG-triggered protocol was compared in terms of radiation dose calculation between DSCT (6.5 ± 2.9 mSv) and SSCT (6.2 ± 1.0 mSv) scanners and no significant difference was noted (p=0.99). However, the effective dose was significantly lower with DSCT (18.2 ± 8.3 mSv) than with SSCT (28.3 ± 7.0 mSv) in the retrospective gated protocol. Prospective ECG-triggered CCTA reduces radiation dose significantly compared to retrospective ECG-gated CCTA, while maintaining good image quality. Copyright © 2012 Elsevier Ireland Ltd. All rights reserved.

  10. A realistic 3-D gated cardiac phantom for quality control of gated myocardial perfusion SPET: the Amsterdam gated (AGATE) cardiac phantom

    NARCIS (Netherlands)

    Visser, Jacco J. N.; Sokole, Ellinor Busemann; Verberne, Hein J.; Habraken, Jan B. A.; van de Stadt, Huybert J. F.; Jaspers, Joris E. N.; Shehata, Morgan; Heeman, Paul M.; van Eck-Smit, Berthe L. F.

    2004-01-01

    A realistic 3-D gated cardiac phantom with known left ventricular (LV) volumes and ejection fractions (EFs) was produced to evaluate quantitative measurements obtained from gated myocardial single-photon emission tomography (SPET). The 3-D gated cardiac phantom was designed and constructed to fit

  11. Channel shape and interpoly dielectric material effects on electrical characteristics of floating-gate-type three-dimensional fin channel flash memories

    Science.gov (United States)

    Liu, Yongxun; Nabatame, Toshihide; Nguyen, Num; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Mizubayashi, Wataru; Morita, Yukinori; Migita, Shinji; Ota, Hiroyuki; Chikyow, Toyohiro; Masahara, Meishoku

    2015-04-01

    Floating-gate (FG)-type three-dimensional (3D) fin channel flash memories with triangular fin (TF) and rectangular fin (RF) channels and different interpoly dielectric (IPD) materials have been successfully fabricated using (100)- and (110)-oriented silicon-on-insulator (SOI) wafers and orientation-dependent wet etching. The electrical characteristics of the fabricated FG-type 3D fin channel flash memories including threshold voltage (Vt) variability, program/erase (P/E) speed, memory window, endurance, and data retention at room temperature and 85 °C have been comparatively investigated. A higher P/E speed, a larger memory window, and a lower-voltage operation are experimentally obtained in the TF channel flash memories with an Al2O3-nitride-oxide (ANO) IPD layer (TF-ANO) than in the RF channel ones with the same ANO IPD layer (RF-ANO) and the TF channel ones with an oxide-nitride-oxide (ONO) IPD layer (TF-ONO). The larger memory window and lower-voltage operation of TF-ANO flash memories are due to the high-k effect of the Al2O3 layer and the electric field enhancement at the sharp foot edges of the TF channels. It was also found that data retention for all fabricated FG-type 3D fin channel flash memories shows a weak dependence on temperature.

  12. Single Event Analysis and Fault Injection Techniques Targeting Complex Designs Implemented in Xilinx-Virtex Family Field Programmable Gate Array (FPGA) Devices

    Science.gov (United States)

    Berg, Melanie D.; LaBel, Kenneth; Kim, Hak

    2014-01-01

    An informative session regarding SRAM FPGA basics. Presenting a framework for fault injection techniques applied to Xilinx Field Programmable Gate Arrays (FPGAs). Introduce an overlooked time component that illustrates fault injection is impractical for most real designs as a stand-alone characterization tool. Demonstrate procedures that benefit from fault injection error analysis.

  13. A Theoretical Study of a Novel Single-Electron Refrigerator Fabricated from Semiconductor Materials

    OpenAIRE

    Ikeda, Hiroya; Salleh, Faiz

    2011-01-01

    We propose a novel single-electron refrigerator (SER) that can be fabricated from semiconductor materials such as a silicon-on-insulator wafer. The SER consists of a single-electron box and a single-electron pump (SEP). An equivalent circuit of the SEP refrigerator was derived. Its stability diagram (Coulomb diamond) was theoretically calculated and found to have a distorted honeycomb structure. In addition, a Monte Carlo simulation based on the orthodox theory for the Coulomb blockade phenom...

  14. Metal (Hydr)oxides@Polymer Core-Shell Strategy to Metal Single-Atom Materials.

    Science.gov (United States)

    Zhang, Maolin; Wang, Yang-Gang; Chen, Wenxing; Dong, Juncai; Zheng, Lirong; Luo, Jun; Wan, Jiawei; Tian, Shubo; Cheong, Weng-Chon; Wang, Dingsheng; Li, Yadong

    2017-08-16

    Preparing metal single-atom materials is currently attracting tremendous attention and remains a significant challenge. Herein, we report a novel core-shell strategy to synthesize single-atom materials. In this strategy, metal hydroxides or oxides are coated with polymers, followed by high-temperature pyrolysis and acid leaching, metal single atoms are anchored on the inner wall of hollow nitrogen-doped carbon (CN) materials. By changing metal precursors or polymers, we demonstrate the successful synthesis of different metal single atoms dispersed on CN materials (SA-M/CN, M = Fe, Co, Ni, Mn, FeCo, FeNi, etc.). Interestingly, the obtained SA-Fe/CN exhibits much higher catalytic activity for hydroxylation of benzene to phenol than Fe nanoparticles/CN (45% vs 5% benzene conversion). First-principle calculations further reveal that the high reactivity originates from the easier formation of activated oxygen species at the single Fe site. Our methodology provides a convenient route to prepare a variety of metal single-atom materials representing a new class of catalysts.

  15. SEMICONDUCTOR DEVICES: Structural and electrical characteristics of lanthanum oxide gate dielectric film on GaAs pHEMT technology

    Science.gov (United States)

    Chia-Song, Wu; Hsing-Chung, Liu

    2009-11-01

    This paper investigates the feasibility of using a lanthanum oxide thin film (La2O3) with a high dielectric constant as a gate dielectric on GaAs pHEMTs to reduce gate leakage current and improve the gate to drain breakdown voltage relative to the conventional GaAs pHEMT. An E/D mode pHEMT in a single chip was realized by selecting the appropriate La2O3 thickness. The thin La2O3 film was characterized: its chemical composition and crystalline structure were determined by X-ray photoelectron spectroscopy and X-ray diffraction, respectively. La2O3 exhibited good thermal stability after post-deposition annealing at 200, 400 and 600 °C because of its high binding-energy (835.6 eV). Experimental results clearly demonstrated that the La2O3 thin film was thermally stable. The DC and RF characteristics of Pt/La2O3/Ti/Au gate and conventional Pt/Ti/Au gate pHEMTs were examined. The measurements indicated that the transistor with the Pt/La2O3/Ti/Au gate had a higher breakdown voltage and lower gate leakage current. Accordingly, the La2O3 thin film is a potential high-k material for use as a gate dielectric to improve electrical performance and the thermal effect in high-power applications.

  16. A Theoretical Study of a Novel Single-Electron Refrigerator Fabricated from Semiconductor Materials

    Science.gov (United States)

    Ikeda, Hiroya; Salleh, Faiz

    2011-06-01

    We propose a novel single-electron refrigerator (SER) that can be fabricated from semiconductor materials such as a silicon-on-insulator wafer. The SER consists of a single-electron box and a single-electron pump (SEP). An equivalent circuit of the SEP refrigerator was derived. Its stability diagram (Coulomb diamond) was theoretically calculated and found to have a distorted honeycomb structure. In addition, a Monte Carlo simulation based on the orthodox theory for the Coulomb blockade phenomenon predicts successful single-electron extraction and injection.

  17. Exposure to carbon nanotube material: aerosol release during the handling of unrefined single-walled carbon nanotube material.

    Science.gov (United States)

    Maynard, Andrew D; Baron, Paul A; Foley, Michael; Shvedova, Anna A; Kisin, Elena R; Castranova, Vincent

    2004-01-09

    Carbon nanotubes represent a relatively recently discovered allotrope of carbon that exhibits unique properties. While commercial interest in the material is leading to the development of mass production and handling facilities, little is known of the risk associated with exposure. In a two-part study, preliminary investigations have been carried out into the potential exposure routes and toxicity of single-walled carbon nanotube material (SWCNT)--a specific form of the allotrope. The material is characterized by bundles of fibrous carbon molecules that may be a few nanometers in diameter, but micrometers in length. The two production processes investigated use-transition metal catalysts, leading to the inclusion of nanometer-scale metallic particles within unrefined SWCNT material. A laboratory-based study was undertaken to evaluate the physical nature of the aerosol formed from SWCNT during mechanical agitation. This was complemented by a field study in which airborne and dermal exposure to SWCNT was investigated while handling unrefined material. Although laboratory studies indicated that with sufficient agitation, unrefined SWCNT material can release fine particles into the air, concentrations generated while handling material in the field were very low. Estimates of the airborne concentration of nanotube material generated during handling suggest that concentrations were lower than 53 microg/m(3) in all cases. Glove deposits of SWCNT during handling were estimated at between 0.2 mg and 6 mg per hand.

  18. Edge-on gating effect in molecular wires.

    Science.gov (United States)

    Lo, Wai-Yip; Bi, Wuguo; Li, Lianwei; Jung, In Hwan; Yu, Luping

    2015-02-11

    This work demonstrates edge-on chemical gating effect in molecular wires utilizing the pyridinoparacyclophane (PC) moiety as the gate. Different substituents with varied electronic demands are attached to the gate to simulate the effect of varying gating voltages similar to that in field-effect transistor (FET). It was observed that the orbital energy level and charge carrier's tunneling barriers can be tuned by changing the gating group from strong electron acceptors to strong electron donors. The single molecule conductance and current-voltage characteristics of this molecular system are truly similar to those expected for an actual single molecular transistor.

  19. New gate opening hours

    CERN Multimedia

    GS Department

    2009-01-01

    Please note the new opening hours of the gates as well as the intersites tunnel from the 19 May 2009: GATE A 7h - 19h GATE B 24h/24 GATE C 7h - 9h\t17h - 19h GATE D 8h - 12h\t13h - 16h GATE E 7h - 9h\t17h - 19h Prévessin 24h/24 The intersites tunnel will be opened from 7h30 to 18h non stop. GS-SEM Group Infrastructure and General Services Department

  20. Optimization of Ecg Gating in Quantitative Femoral Angiography

    International Nuclear Information System (INIS)

    Nilsson, S.; Berglund, I.; Erikson, U.; Johansson, J.; Walldius, G.

    2003-01-01

    Purpose: To determine which phase of the heart cycle would yield the highest reproducibility in measuring atherosclerosis-related variables such as arterial lumen volume and edge roughness. Material and Methods: 35 patients with hypercholesterolemia underwent select ive femoral angiography, repeated four times at 10-min intervals. The angiographies were performed with Ecg-gated exposures. In angiographies 1 and 2 the delay from R-wave maximum to each exposure was 0.1 s, in angiographies 3 and 4 the delay was 0.1, 0.3, 0.5 or 0.7 s or the exposures were performed 1/s without Ecg gating. Arterial lumen volume and edge roughness were measured in a 20-cm segment of the superficial femoral artery using a computer-based densitometric method. Measurement reproducibility was determined by comparing angiographies 1-2 and angiographies 3-4. Results: When measuring arterial lumen volume and edge roughness of a 20-cm segment of the femoral artery, reproducibility was not dependent on Ecg gating. In measuring single arterial diameters and cross-sectional areas, the reproducibility was better when exposures were made 0.1 s after the R-wave maximum than when using other settings of the Ecg gating device or without Ecg gating. Conclusion: The influence of pulsatile flow upon quantitative measurement in femoral angiograms seems to be the smallest possible in early systole, as can be demonstrated when measuring single diameters and cross-sectional areas. In variables based on integration over longer segments, measurement reproducibility seems to be independent of phase

  1. Optimization of Ecg Gating in Quantitative Femoral Angiography

    Energy Technology Data Exchange (ETDEWEB)

    Nilsson, S.; Berglund, I.; Erikson, U. [Univ. Hospital, Uppsala (Sweden). Dept. of Oncology, Radiology and Clinical Immunology; Johansson, J.; Walldius, G. [Karolinska Hospital, Stockholm (Sweden). King Gustav V Research Inst.

    2003-09-01

    Purpose: To determine which phase of the heart cycle would yield the highest reproducibility in measuring atherosclerosis-related variables such as arterial lumen volume and edge roughness. Material and Methods: 35 patients with hypercholesterolemia underwent select ive femoral angiography, repeated four times at 10-min intervals. The angiographies were performed with Ecg-gated exposures. In angiographies 1 and 2 the delay from R-wave maximum to each exposure was 0.1 s, in angiographies 3 and 4 the delay was 0.1, 0.3, 0.5 or 0.7 s or the exposures were performed 1/s without Ecg gating. Arterial lumen volume and edge roughness were measured in a 20-cm segment of the superficial femoral artery using a computer-based densitometric method. Measurement reproducibility was determined by comparing angiographies 1-2 and angiographies 3-4. Results: When measuring arterial lumen volume and edge roughness of a 20-cm segment of the femoral artery, reproducibility was not dependent on Ecg gating. In measuring single arterial diameters and cross-sectional areas, the reproducibility was better when exposures were made 0.1 s after the R-wave maximum than when using other settings of the Ecg gating device or without Ecg gating. Conclusion: The influence of pulsatile flow upon quantitative measurement in femoral angiograms seems to be the smallest possible in early systole, as can be demonstrated when measuring single diameters and cross-sectional areas. In variables based on integration over longer segments, measurement reproducibility seems to be independent of phase.

  2. Simulation of 50-nm Gate Graphene Nanoribbon Transistors

    Directory of Open Access Journals (Sweden)

    Cedric Nanmeni Bondja

    2016-01-01

    Full Text Available An approach to simulate the steady-state and small-signal behavior of GNR MOSFETs (graphene nanoribbon metal-semiconductor-oxide field-effect transistor is presented. GNR material parameters and a method to account for the density of states of one-dimensional systems like GNRs are implemented in a commercial device simulator. This modified tool is used to calculate the current-voltage characteristics as well the cutoff frequency fT and the maximum frequency of oscillation fmax of GNR MOSFETs. Exemplarily, we consider 50-nm gate GNR MOSFETs with N = 7 armchair GNR channels and examine two transistor configurations. The first configuration is a simplified MOSFET structure with a single GNR channel as usually studied by other groups. Furthermore, and for the first time in the literature, we study in detail a transistor structure with multiple parallel GNR channels and interribbon gates. It is shown that the calculated fT of GNR MOSFETs is significantly lower than that of GFETs (FET with gapless large-area graphene channel with comparable gate length due to the mobility degradation in GNRs. On the other hand, GNR MOSFETs show much higher fmax compared to experimental GFETs due the semiconducting nature of the GNR channels and the resulting better saturation of the drain current. Finally, it is shown that the gate control in FETs with multiple parallel GNR channels is improved while the cutoff frequency is degraded compared to single-channel GNR MOSFETs due to parasitic capacitances of the interribbon gates.

  3. Photon gating in four-dimensional ultrafast electron microscopy.

    Science.gov (United States)

    Hassan, Mohammed T; Liu, Haihua; Baskin, John Spencer; Zewail, Ahmed H

    2015-10-20

    Ultrafast electron microscopy (UEM) is a pivotal tool for imaging of nanoscale structural dynamics with subparticle resolution on the time scale of atomic motion. Photon-induced near-field electron microscopy (PINEM), a key UEM technique, involves the detection of electrons that have gained energy from a femtosecond optical pulse via photon-electron coupling on nanostructures. PINEM has been applied in various fields of study, from materials science to biological imaging, exploiting the unique spatial, energy, and temporal characteristics of the PINEM electrons gained by interaction with a "single" light pulse. The further potential of photon-gated PINEM electrons in probing ultrafast dynamics of matter and the optical gating of electrons by invoking a "second" optical pulse has previously been proposed and examined theoretically in our group. Here, we experimentally demonstrate this photon-gating technique, and, through diffraction, visualize the phase transition dynamics in vanadium dioxide nanoparticles. With optical gating of PINEM electrons, imaging temporal resolution was improved by a factor of 3 or better, being limited only by the optical pulse widths. This work enables the combination of the high spatial resolution of electron microscopy and the ultrafast temporal response of the optical pulses, which provides a promising approach to attain the resolution of few femtoseconds and attoseconds in UEM.

  4. Optimisation and validation of a 3D reconstruction algorithm for single photon emission computed tomography by means of GATE simulation platform

    International Nuclear Information System (INIS)

    El Bitar, Ziad

    2006-12-01

    Although time consuming, Monte-Carlo simulations remain an efficient tool enabling to assess correction methods for degrading physical effects in medical imaging. We have optimized and validated a reconstruction method baptized F3DMC (Fully 3D Monte Carlo) in which the physical effects degrading the image formation process were modelled using Monte-Carlo methods and integrated within the system matrix. We used the Monte-Carlo simulation toolbox GATE. We validated GATE in SPECT by modelling the gamma-camera (Philips AXIS) used in clinical routine. Techniques of threshold, filtering by a principal component analysis and targeted reconstruction (functional regions, hybrid regions) were used in order to improve the precision of the system matrix and to reduce the number of simulated photons as well as the time consumption required. The EGEE Grid infrastructures were used to deploy the GATE simulations in order to reduce their computation time. Results obtained with F3DMC were compared with the reconstruction methods (FBP, ML-EM, MLEMC) for a simulated phantom and with the OSEM-C method for the real phantom. Results have shown that the F3DMC method and its variants improve the restoration of activity ratios and the signal to noise ratio. By the use of the grid EGEE, a significant speed-up factor of about 300 was obtained. These results should be confirmed by performing studies on complex phantoms and patients and open the door to a unified reconstruction method, which could be used in SPECT and also in PET. (author)

  5. Integrated shape and material selection for single and multi-performance criteria

    International Nuclear Information System (INIS)

    Singh, Jasveer; Mirjalili, Vahid; Pasini, Damiano

    2011-01-01

    Research highlights: → The method of shape transformers is extended to torsional stiffness and combined load design. → The method is generalized for multi-criteria selection of shape and material. → Performance charts are presented for single and multi-objective selection of cross-section shape and material. → A four quadrant performance chart is presented to visualize the relation between objective function space and design variable space. -- Abstract: A shape and material selection method, based on the concept of shape transformers, has been recently introduced to characterize the mass efficiency of lightweight beams under bending and shear. This paper extends this method to deal with the case of torsional stiffness design, and generalize it to single and multi-crieria selection of lightweight shafts subjected to a combination of bending, shear, and torsional load. The novel feature of the paper is the useful integration of shape and material to model and visualize multi-objective selection problems. The scheme is centered on concept selection in structural design, and hinges on measures that govern the shape properties of a cross-section regardless of its size. These measures, referred as shape transformers, can classify shapes in a way similar to material classification. The procedure is exemplified by considering torsional stiffness as a constraint. The performance charts are developed for single and multi-criteria to visualize in a glance the whole range of cross-sectional shapes for each material. Each design chart is explained with a brief example.

  6. Optically stimulated luminescence techniques in retrospective dosimetry using single grains of quartz extracted from unheated materials

    International Nuclear Information System (INIS)

    Joerkov Thomsen, Kristina

    2004-02-01

    This work investigates the possibility of applying optically stimulated luminescence (OSL) in retrospective dose determinations using unheated materials. It focuses on identifying materials suitable for use in assessment of doses absorbed as a consequence of radiation accidents (i.e. accident dosimetry). Special attention has been paid to quartz extracted from unheated building materials such as concrete and mortar. The single-aliquot regeneration-dose (SAR) protocol has been used to determine absorbed doses in small aliquots as well as single grains of quartz. It is shown that OSL measurements of single grains of quartz extracted from poorly-bleached building materials can provide useful information on radiation accident doses, even when the luminescence sensitivity is low. Sources of variance in well-bleached single grain dose distributions have been investigated in detail and it is concluded that the observed variability in the data is consistent with the sum (in quadrature) of a component, which depends on the number of photons detected from each grain, and a fixed component independent of light level. Dose depth profiles through laboratory irradiated concrete bricks have successfully been measured and minimum detection limits of less than 100 mGy are derived. Measurements of thermal transfer in single grains of poorly-bleached quartz show that thermal transfer is variable on a grain-to-grain basis and that it can be a source of variance in single-grain dose distributions. Furthermore, the potential of using common household and workplace chemicals, such as table salt, washing powder and water softener, in retrospective dosimetry has been investigated. It is concluded that such materials should be considered as retrospective dosimeters in the event of a radiation accident. (au)

  7. Physics of Trap Generation and Electrical Breakdown in Ultra-thin SiO2 and SiON Gate Dielectric Materials

    NARCIS (Netherlands)

    Nicollian, Paul Edward

    2007-01-01

    This work spans nearly a decade of industrial research in the reliability physics of deeply scaled SiO2 and SiON gate dielectrics. In this work, we will present our following original contributions to the field: • Below 5V stress, the dominant mechanism for stressed induced leakage current in the

  8. A Single Amino Acid Substitution in the Third Transmembrane Region Has Opposite Impacts on the Selectivity of the Parasiticides Fluralaner and Ivermectin for Ligand-Gated Chloride Channels.

    Science.gov (United States)

    Nakata, Yunosuke; Fuse, Toshinori; Yamato, Kohei; Asahi, Miho; Nakahira, Kunimitsu; Ozoe, Fumiyo; Ozoe, Yoshihisa

    2017-11-01

    Fluralaner (Bravecto) is a recently marketed isoxazoline ectoparasiticide. This compound potently inhibits GABA-gated chloride channels (GABACls) and less potently glutamate-gated chloride channels (GluCls) in insects. The mechanism underlying this selectivity is unknown. Therefore, we sought to identify the amino acid residues causing the low potency of fluralaner toward GluCls. We examined the fluralaner sensitivity of mutant housefly ( Musca domestica ) GluCls in which amino acid residues in the transmembrane subunit interface were replaced with the positionally equivalent amino acids of Musca GABACls. Of these amino acids, substitution of an amino acid (Leu315) in the third transmembrane region (TM3) with an aromatic amino acid dramatically enhanced the potency of fluralaner in the GluCls. In stark contrast to the enhancement of fluralaner potency, this mutation eliminated the activation of currents and the potentiation but not the antagonism of glutamate responses that are otherwise all elicited by the macrolide parasiticide ivermectin (IVM). Our findings indicate that the amino acid Leu315 in Musca GluCls plays significant roles in determining the selectivity of fluralaner and IVM for these channels. Given the high sequence similarity of TM3, this may hold true more widely for the GluCls and GABACls of other insect species. Copyright © 2017 by The American Society for Pharmacology and Experimental Therapeutics.

  9. Learning Effectiveness and Cognitive Loads in Instructional Materials of Programming Language on Single and Dual Screens

    Science.gov (United States)

    Hsu, Jenq-Muh; Chang, Ting-Wen; Yu, Pao-Ta

    2012-01-01

    The teaching and learning environment in a traditional classroom typically includes a projection screen, a projector, and a computer within a digital interactive table. Instructors may apply multimedia learning materials using various information communication technologies to increase interaction effects. However, a single screen only displays a…

  10. Single cells for forensic DNA analysis--from evidence material to test tube.

    Science.gov (United States)

    Brück, Simon; Evers, Heidrun; Heidorn, Frank; Müller, Ute; Kilper, Roland; Verhoff, Marcel A

    2011-01-01

    The purpose of this project was to develop a method that, while providing morphological quality control, allows single cells to be obtained from the surfaces of various evidence materials and be made available for DNA analysis in cases where only small amounts of cell material are present or where only mixed traces are found. With the SteREO Lumar.V12 stereomicroscope and UV unit from Zeiss, it was possible to detect and assess single epithelial cells on the surfaces of various objects (e.g., glass, plastic, metal). A digitally operated micromanipulator developed by aura optik was used to lift a single cell from the surface of evidence material and to transfer it to a conventional PCR tube or to an AmpliGrid(®) from Advalytix. The actual lifting of the cells was performed with microglobes that acted as carriers. The microglobes were held with microtweezers and were transferred to the DNA analysis receptacles along with the adhering cells. In a next step, the PCR can be carried out in this receptacle without removing the microglobe. Our method allows a single cell to be isolated directly from evidence material and be made available for forensic DNA analysis. © 2010 American Academy of Forensic Sciences.

  11. Evaluation of undoped ZnS single crystal materials for x-ray imaging applications

    Science.gov (United States)

    Saleh, Muad; Lynn, Kelvin G.; McCloy, John S.

    2017-05-01

    ZnS-based materials have a long history of use as x-ray luminescent materials. ZnS was one of the first discovered scintillators and is reported to have one of the highest scintillator efficiencies. The use of ZnS for high energy luminescence has been thus far limited to thin powder screens, such as ZnS:Ag which is used for detecting alpha radiation, due to opacity to its scintillation light, primarily due to scattering. ZnS in bulk form (chemical vapor deposited, powder processed, and single crystal) has high transmission and low scattering compared to powder screens. In this paper, the performance of single crystalline ZnS is evaluated for low energy x-ray (PLE) of several undoped ZnS single crystals is compared to their Radioluminescence (RL) spectra. It was found that the ZnS emission wavelength varies on the excitation source energy.

  12. Respiratory gated beam delivery cannot facilitate margin reduction, unless combined with respiratory correlated image guidance

    International Nuclear Information System (INIS)

    Korreman, Stine S.; Juhler-Nottrup, Trine; Boyer, Arthur L.

    2008-01-01

    Purpose/objective: In radiotherapy of targets moving with respiration, beam gating is offered as a means of reducing the target motion. The purpose of this study is to evaluate the safe magnitude of margin reduction for respiratory gated beam delivery. Materials/methods: The study is based on data for 17 lung cancer patients in separate protocols at Rigshospitalet and Stanford Cancer Center. Respiratory curves for external optical markers and implanted fiducials were collected using equipment based on the RPM system (Varian Medical Systems). A total of 861 respiratory curves represented external measurements over 30 fraction treatment courses for 10 patients, and synchronous external/internal measurements in single sessions for seven patients. Variations in respiratory amplitude (simulated coaching) and external/internal phase shifts were simulated by perturbation with realistic values. Variations were described by medians and standard deviations (SDs) of position distributions of the markers. Gating windows (35% duty cycle) were retrospectively applied to the respiratory data for each session, mimicking the use of commercially available gating systems. Medians and SDs of gated data were compared to those of ungated data, to assess potential margin reductions. Results: External respiratory data collected over entire treatment courses showed SDs from 1.6 to 8.1 mm, the major part arising from baseline variations. The gated data had SDs from 1.5 to 7.7 mm, with a mean reduction of 0.3 mm (6%). Gated distributions were more skewed than ungated, and in a few cases a marginal miss of gated respiration would be found even if no margin reduction was applied. Regularization of breathing amplitude to simulate coaching did not alter these results significantly. Simulation of varying phase shifts between internal and external respiratory signals showed that the SDs of gated distributions were the same as for the ungated or smaller, but the median values were markedly shifted

  13. Effects of aortic tortuosity on left ventricular diastolic parameters derived from gated myocardial perfusion single photon emission computed tomography in patients with normal myocardial perfusion.

    Science.gov (United States)

    Kurisu, Satoshi; Nitta, Kazuhiro; Sumimoto, Yoji; Ikenaga, Hiroki; Ishibashi, Ken; Fukuda, Yukihiro; Kihara, Yasuki

    2017-12-05

    Aortic tortuosity is often found on chest radiograph, especially in aged patients. We tested the hypothesis that aortic tortuosity was associated with LV diastolic parameters derived from gated SPECT in patients with normal myocardial perfusion. One-hundred and twenty-two patients with preserved LV ejection fraction and normal myocardial perfusion were enrolled. Descending aortic deviation was defined as the horizontal distance from the left line of the aortic knob to the most prominent left line of the descending aorta. This parameter was measured for the quantitative assessment of aortic tortuosity. Peak filling rate (PFR) and one-third mean filling rate (1/3 MFR) were obtained from redistribution images as LV diastolic parameters. Descending aortic deviation ranged from 0 to 22 mm with a mean distance of 4.5 ± 6.3 mm. Descending aortic deviation was significantly correlated with age (r = 0.38, p < 0.001) and estimated glomerular filtration rate (eGFR) (r = - 0.21, p = 0.02). Multivariate linear regression analysis revealed that eGFR (β = 0.23, p = 0.02) and descending aortic deviation (β = - 0.23, p = 0.01) were significantly associated with PFR, and that only descending aortic deviation (β = - 0.21, p = 0.03) was significantly associated with 1/3 MFR. Our data suggest that aortic tortuosity is associated with LV diastolic parameters derived from gated SPECT in patients with normal myocardial perfusion.

  14. Combined assessment of myocardial perfusion and function by ECG-gated myocardial perfusion single-photon emission computed tomography for the prediction of future cardiac events in patients with type 2 diabetes mellitus

    International Nuclear Information System (INIS)

    Kato, Masahiko; Matsumoto, Naoya; Nakano, Yoshimochi; Suzuki, Yasuyuki; Yoda, Shunichi; Nagao, Ken; Hirayama, Atsushi; Sato, Yuichi; Kasama, Shu

    2011-01-01

    The mid-term prognostic significance of electrocardiogram (ECG)-gated single-photon emission computed tomography (SPECT) remains unclear in Japanese patients with type 2 diabetes mellitus (DM). In the present study rates of future cardiac events (nonfatal acute myocardial infarction (AMI), cardiac death (CD) and severe heart failure (HF) requiring hospitalization) were compared in patients with and without DM. 1,810 patients (563 DM and 1,247 non-DM) we followed for a mean of 26.3±15.5 months. Summed stress score (SSS), summed difference score (SDS), poststress ejection fraction (EF) and resting end-diastolic volume (EDV) were calculated. In total, 20 cases of AMI (9 in DM (1.59%) and 11 in non-DM (0.88%)), 20 of CD (7 in DM patients (1.24%) and 13 in non-DM (1.04%)) and 54 of severe HF (31 in DM (5.5%) and 23 in non-DM (1.84%)) occurred. Univariate Cox analysis showed that, in DM patients, predictors of total cardiac events were poststress EF (Wald 60.4; P 1c value (Wald 4.30; P<0.05). Multivariate Cox analysis showed that poststress EF (Wald 9.85; P<0.01) and SDS (Wald 6.19; P<0.01) were independent predictors of total cardiac events. Combined assessment of perfusion and function by ECG-gated SPECT may predict future cardiac events in type 2 DM patients. (author)

  15. Single-Molecule Transistor from Graphene Nanoelectrodes and Novel Functional Materials From Self-assembly

    Science.gov (United States)

    Xu, Qizhi

    This thesis introduces a new strategy to fabricate single molecular transistor by utilizing the covalent chemistry to reconnect the molecule with the electroburnt graphene nanogap. We studied the effect of coupling chemistry and molecular length on the efficiency of reconnection between the molecule and the graphene. With this technique, we are also able to observe the Coulomb Blockade phenomenon, which is a characteristics of single-electron transistors. The high yield and versatility of this approach augur well for creating a new generation of sensors, switches, and other functional devices using graphene contacts. This thesis also introduces a new type of organic single-crystal p-n heterojunction inspired from the ball-and-socket shape-complementarity between fullerene and contorted dibenzotetrathienocoronene (c-DBTTC). We studied the influence of temperature, pressure, and time on the self-assembly process of contorted dibenzotetrathienocoronene on the as-grown fullerene crystals. We also utilized fluorescence microscopy to investigate the charge transfer in this type of p-n heterojunction. Finally, this thesis introduces one-dimensional and two-dimensional programming in solid-state materials from superatom macrocycles. We find that the linkers that bridges the two superatoms determine the distance and electronic coupling between the two superatoms in the macrocycle, which in turn determines the way they self-assembled in the solid-state materials. The thesis is composed of four chapters. The first chapter introduces why we are in terested in molecular transistors and new functional materials, and what has been done so far. The second chapter described the approach we developed to assemble single molecule into circuits with graphene electrodes. The third chapter details the method to fabricate the organic single-crystal C60-DBTTC p-n heterojunction, which is of great importance to understand their charge transfer process. The last chapter introduced a new

  16. The actuation characterization of cantilevered unimorph beams with single crystal piezoelectric materials

    International Nuclear Information System (INIS)

    Bilgen, Onur; Friswell, Michael I; Amin Karami, M; Inman, Daniel J

    2011-01-01

    An experimental and theoretical electromechanical characterization of beam-like, uniform cross-section, unimorph structures employing single crystal piezoelectrics is presented. The purpose of the research is to understand and compare the actuation capabilities of several piezoelectric materials and substrate configurations so that optimal design choices can be employed in lightweight, low power aerodynamic applications. Monolithic devices made from three kinds of piezoelectrics—single crystal PMN–PZT (lead magnesium niobate–lead zirconate titanate) and the polycrystalline PZT-5A and PZT-5H types—are compared in a unimorph cantilevered beam configuration. A total of 24 unimorph specimens are fabricated and the validity of existing models is examined through experimentation. The tip velocity response to harmonic voltage excitation is measured and compared to the analytical prediction with the perfect bonding assumption. Summarizing, it was confirmed that the substrate-to-piezoelectric thickness ratio and substrate modulus are the important design parameters in determining the measured output of the unimorphs and the accuracy of the model prediction. The single crystal piezoelectrics demonstrated actuation authority two to four times higher (measured in terms of peak displacement per applied voltage) when compared to the polycrystalline piezoceramics for the same substrate material and geometry choice. In contrast to the higher actuation output, practical implementation issues are noted for the single crystal devices. The lack of grain boundaries (as in the polycrystalline material) makes the single crystals very 'brittle' and susceptible to stress concentrations. Another important limitation is the low transition temperature, which limits the use of conventional solder materials in creating electrical connections

  17. Randomized benchmarking and process tomography for gate errors in a solid-state qubit.

    Science.gov (United States)

    Chow, J M; Gambetta, J M; Tornberg, L; Koch, Jens; Bishop, Lev S; Houck, A A; Johnson, B R; Frunzio, L; Girvin, S M; Schoelkopf, R J

    2009-03-06

    We present measurements of single-qubit gate errors for a superconducting qubit. Results from quantum process tomography and randomized benchmarking are compared with gate errors obtained from a double pi pulse experiment. Randomized benchmarking reveals a minimum average gate error of 1.1+/-0.3% and a simple exponential dependence of fidelity on the number of gates. It shows that the limits on gate fidelity are primarily imposed by qubit decoherence, in agreement with theory.

  18. Single access laparoscopic cholecystectomy: technique without the need for special materials and with better ergonomics

    Directory of Open Access Journals (Sweden)

    Marco Aurélio Lameirão Pinto

    Full Text Available The authors describe a surgical technique which allows, without increasing costs, to perform laparoscopic cholecystectomy with a single incision, without using specific materials and with better surgical ergonomics. The technique consists of a longitudinal umbilical incision, navel detachment, use of a permanent 10mm trocar and two clamps directly and bilaterally through the aponeurosis without the use of 5mm trocars, transcutaneous gallbladder repair with straight needle cotton suture, ligation with unabsorbable suture and umbilical incision for the specimen extraction. The presented technique enables the procedure with conventional and permanent materials, improving surgical ergonomics, with safety and aesthetic advantages.

  19. Dissolution chemistry and biocompatibility of single-crystalline silicon nanomembranes and associated materials for transient electronics.

    Science.gov (United States)

    Hwang, Suk-Won; Park, Gayoung; Edwards, Chris; Corbin, Elise A; Kang, Seung-Kyun; Cheng, Huanyu; Song, Jun-Kyul; Kim, Jae-Hwan; Yu, Sooyoun; Ng, Joanne; Lee, Jung Eun; Kim, Jiyoung; Yee, Cassian; Bhaduri, Basanta; Su, Yewang; Omennetto, Fiorenzo G; Huang, Yonggang; Bashir, Rashid; Goddard, Lynford; Popescu, Gabriel; Lee, Kyung-Mi; Rogers, John A

    2014-06-24

    Single-crystalline silicon nanomembranes (Si NMs) represent a critically important class of material for high-performance forms of electronics that are capable of complete, controlled dissolution when immersed in water and/or biofluids, sometimes referred to as a type of "transient" electronics. The results reported here include the kinetics of hydrolysis of Si NMs in biofluids and various aqueous solutions through a range of relevant pH values, ionic concentrations and temperatures, and dependence on dopant types and concentrations. In vitro and in vivo investigations of Si NMs and other transient electronic materials demonstrate biocompatibility and bioresorption, thereby suggesting potential for envisioned applications in active, biodegradable electronic implants.

  20. Physicomechanical properties of single- and two-phase polycrystalline materials on micro- and macroscopic levels

    International Nuclear Information System (INIS)

    Kuksa, L.V.; Arzamaskova, L.M.

    2000-01-01

    The results of studies on elastic and plastic properties of the single- and two-phase polycrystalline materials in dependence on the choice of the consideration scale level are presented. The experimental and theoretical methods, making it possible to study the role of the scale factor by consideration on the micro- and macrolevel and the peculiarities of forming the physicomechanical properties of the material as a whole, are developed. The dependences, characterizing the change of the physicomechanical properties by different scales of consideration, are obtained [ru

  1. Materialization of single multicomposite nanowire: entrapment of ZnO nanoparticles in polyaniline nanowire

    Directory of Open Access Journals (Sweden)

    Park Seong

    2011-01-01

    Full Text Available Abstract We present materialization of single multicomposite nanowire (SMNW-entrapped ZnO nanoparticles (NPs via an electrochemical growth method, which is a newly developed fabrication method to grow a single nanowire between a pair of pre-patterned electrodes. Entrapment of ZnO NPs was controlled via different conditions of SMNW fabrication such as an applied potential and mixture ratio of NPs and aniline solution. The controlled concentration of ZnO NP results in changes in the physical properties of the SMNWs, as shown in transmission electron microscopy images. Furthermore, the electrical conductivity and elasticity of SMNWs show improvement over those of pure polyaniline nanowire. The new nano-multicomposite material showed synergistic effects on mechanical and electrical properties, with logarithmical change and saturation increasing ZnO NP concentration.

  2. Structural characterization of the voltage sensor domain and voltage-gated K+- channel proteins vectorially-oriented within a single bilayer membrane at the solid/vapor and solid/liquid interfaces via neutron interferometry

    Science.gov (United States)

    Gupta, S.; Dura, J.A.; Freites, J.A.; Tobias, D.J.; Blasie, J. K.

    2012-01-01

    The voltage-sensor domain (VSD) is a modular 4-helix bundle component that confers voltage sensitivity to voltage-gated cation channels in biological membranes. Despite extensive biophysical studies and the recent availability of x-ray crystal structures for a few voltage-gated potassium (Kv-) channels and a voltage-gate sodium (Nav-) channel, a complete understanding of the cooperative mechanism of electromechanical coupling, interconverting the closed-to-open states (i.e. non-conducting to cation conducting) remains undetermined. Moreover, the function of these domains is highly dependent on the physical-chemical properties of the surrounding lipid membrane environment. The basis for this work was provided by a recent structural study of the VSD from a prokaryotic Kv-channel vectorially-oriented within a single phospholipid (POPC; 1-palmitoyl-2-oleoyl-sn-glycero-3-phosphocholine) membrane investigated by x-ray interferometry at the solid/moist He (or solid/vapor) and solid/liquid interfaces thus achieving partial to full hydration, respectively (Gupta et. al. Phys. Rev E. 2011, 84). Here, we utilize neutron interferometry to characterize this system in substantially greater structural detail at the sub-molecular level, due to its inherent advantages arising from solvent contrast variation coupled with the deuteration of selected sub-molecular membrane components, especially important for the membrane at the solid/liquid interface. We demonstrate the unique vectorial orientation of the VSD and the retention of its molecular conformation manifest in the asymmetric profile structure of the protein within the profile structure of this single bilayer membrane system. We definitively characterize the asymmetric phospholipid bilayer solvating the lateral surfaces of the VSD protein within the membrane. The profile structures of both the VSD protein and phospholipid bilayer depend upon the hydration state of the membrane. We also determine the distribution of water and

  3. Correlating single-molecule and ensemble-average measurements of peptide adsorption onto different inorganic materials.

    Science.gov (United States)

    Kim, Seong-Oh; Jackman, Joshua A; Mochizuki, Masahito; Yoon, Bo Kyeong; Hayashi, Tomohiro; Cho, Nam-Joon

    2016-06-07

    The coating of solid-binding peptides (SBPs) on inorganic material surfaces holds significant potential for improved surface functionalization at nano-bio interfaces. In most related studies, the goal has been to engineer peptides with selective and high binding affinity for a target material. The role of the material substrate itself in modulating the adsorption behavior of a peptide molecule remains less explored and there are few studies that compare the interaction of one peptide with different inorganic substrates. Herein, using a combination of two experimental techniques, we investigated the adsorption of a 16 amino acid-long random coil peptide to various inorganic substrates - gold, silicon oxide, titanium oxide and aluminum oxide. Quartz crystal microbalance-dissipation (QCM-D) experiments were performed in order to measure the peptide binding affinity for inorganic solid supports at the ensemble average level, and atomic force microscopy (AFM) experiments were conducted in order to determine the adhesion force of a single peptide molecule. A positive trend was observed between the total mass uptake of attached peptide and the single-molecule adhesion force on each substrate. Peptide affinity for gold was appreciably greater than for the oxide substrates. Collectively, the results obtained in this study offer insight into the ways in which inorganic materials can differentially influence and modulate the adhesion of SBPs.

  4. Identification and characterization of hydrophobic gate residues in TRP channels.

    Science.gov (United States)

    Zheng, Wang; Hu, Ruikun; Cai, Ruiqi; Hofmann, Laura; Hu, Qiaolin; Fatehi, Mohammad; Long, Wentong; Kong, Tim; Tang, Jingfeng; Light, Peter; Flockerzi, Veit; Cao, Ying; Chen, Xing-Zhen

    2018-02-01

    Transient receptor potential (TRP) channels, subdivided into 6 subfamilies in mammals, have essential roles in sensory physiology. They respond to remarkably diverse stimuli, comprising thermal, chemical, and mechanical modalities, through opening or closing of channel gates. In this study, we systematically substituted the hydrophobic residues within the distal fragment of pore-lining helix S6 with hydrophilic residues and, based on Xenopus oocyte and mammalian cell electrophysiology and a hydrophobic gate theory, identified hydrophobic gates in TRPV6/V5/V4/C4/M8. We found that channel activity drastically increased when TRPV6 Ala616 or Met617 or TRPV5 Ala576 or Met577 , but not any of their adjacent residues, was substituted with hydrophilic residues. Channel activity strongly correlated with the hydrophilicity of the residues at those sites, suggesting that consecutive hydrophobic residues TRPV6 Ala616-Met617 and TRPV5 Ala576-Met577 form a double-residue gate in each channel. By the same strategy, we identified a hydrophobic single-residue gate in TRPV4 Iso715 , TRPC4 Iso617 , and TRPM8 Val976 . In support of the hydrophobic gate theory, hydrophilic substitution at the gate site, which removes the hydrophobic gate seal, substantially increased the activity of TRP channels in low-activity states but had little effect on the function of activated channels. The double-residue gate channels were more sensitive to small changes in the gate's hydrophobicity or size than single-residue gate channels. The unconventional double-reside gating mechanism in TRP channels may have been evolved to respond especially to physiologic stimuli that trigger relatively small gate conformational changes.-Zheng, W., Hu, R., Cai, R., Hofmann, L., Hu, Q., Fatehi, M., Long, W., Kong, T., Tang, J., Light, P., Flockerzi, V., Cao, Y., Chen, X.-Z. Identification and characterization of hydrophobic gate residues in TRP channels.

  5. The Choice Method of Selected Material has influence single evaporation flash method

    International Nuclear Information System (INIS)

    Sunaryo, Geni Rina; Sumijanto; Nurul L, Siti

    2000-01-01

    The final objective of this research is to design the mini scale of desalination installation. It has been started from 1997/1998 and has been doing for this 3 years. Where the study on the assessment of various desalination system has been done in the first year and thermodynamic in the second year. In this third year, literatully study on material resistance from outside pressure has been done. The number of pressure for single evaporator flashing method is mainly depend on the temperature that applied in that system. In this paper, the configuration stage, the choice method of selecting material for main evaporator vessel, tube, tube plates, water boxes, pipework, and valves for multistage flash distillation will be described. The choice of selecting material for MSF is base on economical consideration, cheap, high resistance and easy to be maintained

  6. Estimation of Single-Crystal Elastic Constants of Polycrystalline Materials from Back-Scattered Grain Noise

    International Nuclear Information System (INIS)

    Haldipur, P.; Margetan, F. J.; Thompson, R. B.

    2006-01-01

    Single-crystal elastic stiffness constants are important input parameters for many calculations in material science. There are well established methods to measure these constants using single-crystal specimens, but such specimens are not always readily available. The ultrasonic properties of metal polycrystals, such as velocity, attenuation, and backscattered grain noise characteristics, depend in part on the single-crystal elastic constants. In this work we consider the estimation of elastic constants from UT measurements and grain-sizing data. We confine ourselves to a class of particularly simple polycrystalline microstructures, found in some jet-engine Nickel alloys, which are single-phase, cubic, equiaxed, and untextured. In past work we described a method to estimate the single-crystal elastic constants from measured ultrasonic velocity and attenuation data accompanied by metallographic analysis of grain size. However, that methodology assumes that all attenuation is due to grain scattering, and thus is not valid if appreciable absorption is present. In this work we describe an alternative approach which uses backscattered grain noise data in place of attenuation data. Efforts to validate the method using a pure copper specimen are discussed, and new results for two jet-engine Nickel alloys are presented

  7. Dual-gated volumetric modulated arc therapy

    International Nuclear Information System (INIS)

    Fahimian, Benjamin; Wu, Junqing; Wu, Huanmei; Geneser, Sarah; Xing, Lei

    2014-01-01

    Gated Volumetric Modulated Arc Therapy (VMAT) is an emerging radiation therapy modality for treatment of tumors affected by respiratory motion. However, gating significantly prolongs the treatment time, as delivery is only activated during a single respiratory phase. To enhance the efficiency of gated VMAT delivery, a novel dual-gated VMAT (DG-VMAT) technique, in which delivery is executed at both exhale and inhale phases in a given arc rotation, is developed and experimentally evaluated. Arc delivery at two phases is realized by sequentially interleaving control points consisting of MUs, MLC sequences, and angles of VMAT plans generated at the exhale and inhale phases. Dual-gated delivery is initiated when a respiration gating signal enters the exhale window; when the exhale delivery concludes, the beam turns off and the gantry rolls back to the starting position for the inhale window. The process is then repeated until both inhale and exhale arcs are fully delivered. DG-VMAT plan delivery accuracy was assessed using a pinpoint chamber and diode array phantom undergoing programmed motion. DG-VMAT delivery was experimentally implemented through custom XML scripting in Varian’s TrueBeam™ STx Developer Mode. Relative to single gated delivery at exhale, the treatment time was improved by 95.5% for a sinusoidal breathing pattern. The pinpoint chamber dose measurement agreed with the calculated dose within 0.7%. For the DG-VMAT delivery, 97.5% of the diode array measurements passed the 3%/3 mm gamma criterion. The feasibility of DG-VMAT delivery scheme has been experimentally demonstrated for the first time. By leveraging the stability and natural pauses that occur at end-inspiration and end-exhalation, DG-VMAT provides a practical method for enhancing gated delivery efficiency by up to a factor of two

  8. NASA-JSC Protocol for the Characterization of Single Wall Carbon Nanotube Material Quality

    Science.gov (United States)

    Arepalli, Sivaram; Nikolaev, Pasha; Gorelik, Olga; Hadjiev, Victor; Holmes, William; Devivar, Rodrigo; Files, Bradley; Yowell, Leonard

    2010-01-01

    It is well known that the raw as well as purified single wall carbon nanotube (SWCNT) material always contain certain amount of impurities of varying composition (mostly metal catalyst and non-tubular carbon). Particular purification method also creates defects and/or functional groups in the SWCNT material and therefore affects the its dispersability in solvents (important to subsequent application development). A number of analytical characterization tools have been used successfully in the past years to assess various properties of nanotube materials, but lack of standards makes it difficult to compare these measurements across the board. In this work we report the protocol developed at NASA-JSC which standardizes measurements using TEM, SEM, TGA, Raman and UV-Vis-NIR absorption techniques. Numerical measures are established for parameters such as metal content, homogeneity, thermal stability and dispersability, to allow easy comparison of SWCNT materials. We will also report on the recent progress in quantitative measurement of non-tubular carbon impurities and a possible purity standard for SWCNT materials.

  9. GATE V6: a major enhancement of the GATE simulation platform enabling modelling of CT and radiotherapy

    Energy Technology Data Exchange (ETDEWEB)

    Jan, S; Becheva, E [DSV/I2BM/SHFJ, Commissariat a l' Energie Atomique, Orsay (France); Benoit, D; Rehfeld, N; Stute, S; Buvat, I [IMNC-UMR 8165 CNRS-Paris 7 and Paris 11 Universities, 15 rue Georges Clemenceau, 91406 Orsay Cedex (France); Carlier, T [INSERM U892-Cancer Research Center, University of Nantes, Nantes (France); Cassol, F; Morel, C [Centre de physique des particules de Marseille, CNRS-IN2P3 and Universite de la Mediterranee, Aix-Marseille II, 163, avenue de Luminy, 13288 Marseille Cedex 09 (France); Descourt, P; Visvikis, D [INSERM, U650, Laboratoire du Traitement de l' Information Medicale (LaTIM), CHU Morvan, Brest (France); Frisson, T; Grevillot, L; Guigues, L; Sarrut, D; Zahra, N [Universite de Lyon, CREATIS, CNRS UMR5220, Inserm U630, INSA-Lyon, Universite Lyon 1, Centre Leon Berard (France); Maigne, L; Perrot, Y [Laboratoire de Physique Corpusculaire, 24 Avenue des Landais, 63177 Aubiere Cedex (France); Schaart, D R [Delft University of Technology, Radiation Detection and Medical Imaging, Mekelweg 15, 2629 JB Delft (Netherlands); Pietrzyk, U, E-mail: buvat@imnc.in2p3.fr [Reseach Center Juelich, Institute of Neurosciences and Medicine and Department of Physics, University of Wuppertal (Germany)

    2011-02-21

    GATE (Geant4 Application for Emission Tomography) is a Monte Carlo simulation platform developed by the OpenGATE collaboration since 2001 and first publicly released in 2004. Dedicated to the modelling of planar scintigraphy, single photon emission computed tomography (SPECT) and positron emission tomography (PET) acquisitions, this platform is widely used to assist PET and SPECT research. A recent extension of this platform, released by the OpenGATE collaboration as GATE V6, now also enables modelling of x-ray computed tomography and radiation therapy experiments. This paper presents an overview of the main additions and improvements implemented in GATE since the publication of the initial GATE paper (Jan et al 2004 Phys. Med. Biol. 49 4543-61). This includes new models available in GATE to simulate optical and hadronic processes, novelties in modelling tracer, organ or detector motion, new options for speeding up GATE simulations, examples illustrating the use of GATE V6 in radiotherapy applications and CT simulations, and preliminary results regarding the validation of GATE V6 for radiation therapy applications. Upon completion of extensive validation studies, GATE is expected to become a valuable tool for simulations involving both radiotherapy and imaging.

  10. Improved performance of nanoscale junctionless tunnel field-effect transistor based on gate engineering approach

    Science.gov (United States)

    Molaei Imen Abadi, Rouzbeh; Sedigh Ziabari, Seyed Ali

    2016-11-01

    In this paper, a first qualitative study on the performance characteristics of dual-work function gate junctionless TFET (DWG-JLTFET) on the basis of energy band profile modulation is investigated. A dual-work function gate technique is used in a JLTFET in order to create a downward band bending on the source side similar to PNPN structure. Compared with the single-work function gate junctionless TFET (SWG-JLTFET), the numerical simulation results demonstrated that the DWG-JLTFET simultaneously optimizes the ON-state current, the OFF-state leakage current, and the threshold voltage and also improves average subthreshold slope. It is illustrated that if appropriate work functions are selected for the gate materials on the source side and the drain side, the JLTFET exhibits a considerably improved performance. Furthermore, the optimization design of the tunnel gate length ( L Tun) for the proposed DWG-JLTFET is studied. All the simulations are done in Silvaco TCAD for a channel length of 20 nm using the nonlocal band-to-band tunneling (BTBT) model.

  11. Single-nary philosophy for non-linear study of mechanics of materials

    International Nuclear Information System (INIS)

    Tran, C.

    2005-01-01

    Non-linear study of mechanics of materials is formulated in this paper as a problem of meta-intelligent system analysis. Non-linearity will be singled out as an important concept for understanding of high-order complex systems. Through single-nary thinking, which will be represented in this work, we introduce a modification of Aristotelian philosophy using modal logic and multi-valued logic (these logics we call 'high-order' logic). Next, non-linear cause - effect relations are expressed through non-additive measures and multiple-information aggregation principles based on fuzzy integration. The study of real time behaviors, required experiences and intuition, will be realized using truth measures (non-additive measures) and a procedure for information processing in intelligence levels. (author)

  12. Comparison of sulfur hexafluoride microbubble (SonoVue)-enhanced myocardial contrast echocardiography with gated single-photon emission computed tomography for detection of significant coronary artery disease: a large European multicenter study.

    Science.gov (United States)

    Senior, Roxy; Moreo, Antonella; Gaibazzi, Nicola; Agati, Luciano; Tiemann, Klaus; Shivalkar, Bharati; von Bardeleben, Stephan; Galiuto, Leonarda; Lardoux, Hervé; Trocino, Giuseppe; Carrió, Ignasi; Le Guludec, Dominique; Sambuceti, Gianmario; Becher, Harald; Colonna, Paolo; Ten Cate, Folkert; Bramucci, Ezio; Cohen, Ariel; Bezante, Gianpaolo; Aggeli, Costantina; Kasprzak, Jaroslaw D

    2013-10-08

    The purpose of this study was to compare sulfur hexafluoride microbubble (SonoVue)-enhanced myocardial contrast echocardiography (MCE) with single-photon emission computed tomography (SPECT) relative to coronary angiography (CA) for assessment of coronary artery disease (CAD). Small-scale studies have shown that myocardial perfusion assessed by SonoVue-enhanced MCE is a viable alternative to SPECT for CAD assessment. However, large multicenter studies are lacking. Patients referred for myocardial ischemia testing at 34 centers underwent rest/vasodilator SonoVue-enhanced flash-replenishment MCE, standard (99m)Tc-labeled electrocardiography-gated SPECT, and quantitative CA within 1 month. Myocardial ischemia assessments by 3 independent, blinded readers for MCE and 3 readers for SPECT were collapsed into 1 diagnosis per patient per technique and were compared to CA (reference standard) read by 1 independent blinded reader. Of 628 enrolled patients who received SonoVue (71% males; mean age: 64 years; >1 cardiovascular [CV] risk factor in 99% of patients) 516 patients underwent all 3 examinations, of whom 161 (31.2%) had ≥70% stenosis (131 had single-vessel disease [SVD]; 30 had multivessel disease), and 310 (60.1%) had ≥50% stenosis. Higher sensitivity was obtained with MCE than with SPECT (75.2% vs. 49.1%, respectively; p SonoVue-enhanced MCE demonstrated superior sensitivity but lower specificity for detection of CAD compared to SPECT in a population with a high incidence of CV risk factors and intermediate-high prevalence of CAD. (A phase III study to compare SonoVue® enhanced myocardial echocardiography [MCE] to single photon emission computerized tomography [ECG-GATED SPECT], at rest and at peak of low-dose Dipyridamole stress test, in the assessment of significant coronary artery disease [CAD] in patients with suspect or known CAD using Coronary Angiography as Gold Standard-SonoVue MCE vs SPECT; EUCTR2007-003492-39-GR). Copyright © 2013 American College of

  13. Multiterminal single-molecule-graphene-nanoribbon junctions with the thermoelectric figure of merit optimized via evanescent mode transport and gate voltage

    DEFF Research Database (Denmark)

    Saha, K.K.; Markussen, Troels; Thygesen, Kristian Sommer

    2011-01-01

    We propose thermoelectric devices where a single molecule is connected to two metallic zigzag graphene nanoribbons (ZGNRs) via highly transparent contacts that allow the injection of evanescent wave functions from ZGNRs. Their overlap generates a peak in the electronic transmission that is largely...

  14. Magnetically controlled multifrequency invisibility cloak with a single shell of ferrite material

    Science.gov (United States)

    Wang, Xiaohua; Liu, Youwen

    2015-02-01

    A magnetically controlled multifrequency invisibility cloak with a single shell of the isotropic and homogeneous ferrite material has been investigated based on the scattering cancellation method from the Mie scattering theory. The analytical and simulated results have demonstrated that such this shell can drastically reduce the total scattering cross-section of this cloaking system at multiple frequencies. These multiple cloaking frequencies of this shell can be externally controlled since the magnetic permeability of ferrites is well tuned by the applied magnetic field. This may provide a potential way to design a tunable multifrequency invisibility cloak with considerable flexibility.

  15. Research of predictive factors for cardiac resynchronization therapy: a prospective study comparing data from phase-analysis of gated myocardial perfusion single-photon computed tomography and echocardiography : Trying to anticipate response to CRT.

    Science.gov (United States)

    Gendre, Rémy; Lairez, O; Mondoly, P; Duparc, A; Carrié, D; Galinier, M; Berry, I; Cognet, T

    2017-04-01

    Cardiac resynchronization therapy (CRT) reduces morbidity and mortality in chronic systolic heart failure. About 20% of implanted patients are considered as "non-responders". This study aimed to evaluate gated myocardial perfusion single-photon emission computed tomography (GMPS) phase parameters as compared to echocardiography in the assessment of predictors for response to CRT before and after CRT activation. Forty-two patients were prospectively included during 15 months. A single injection of 99m Tc-tetrofosmin was used to acquire GMPS phase pre- and post-CRT activation. Indicators of positive CRT response were improvement of functional status and 15% reduction in left ventricular end-systolic volume at 3 months. Phase parameters at baseline were similar in the two groups with no influence of perfusion data. Phase parameters after CRT activation were significantly improved in the responders' group (Δ Bandwidth -19° ± 24° vs. 13° ± 31°, p = 0.001; Δ SD -20° ± 30° vs. 26° ± 46°, p = 0.001; Δ Entropy -11 ± 12 vs. 2 ± 6%, p = 0.001). Feasibility and reproducibility were higher for GMPS. Acute phase modifications after CRT activation may predict response to CRT immediately after implantation, but not at baseline, even when adjusted to perfusion data.

  16. Formation of Micro and Mesoporous Amorphous Silica-Based Materials from Single Source Precursors

    Directory of Open Access Journals (Sweden)

    Mohd Nazri Mohd Sokri

    2016-03-01

    Full Text Available Polysilazanes functionalized with alkoxy groups were designed and synthesized as single source precursors for fabrication of micro and mesoporous amorphous silica-based materials. The pyrolytic behaviors during the polymer to ceramic conversion were studied by the simultaneous thermogravimetry-mass spectrometry (TG-MS analysis. The porosity of the resulting ceramics was characterized by the N2 adsorption/desorption isotherm measurements. The Fourier transform infrared spectroscopy (FT-IR and Raman spectroscopic analyses as well as elemental composition analysis were performed on the polymer-derived amorphous silica-based materials, and the role of the alkoxy group as a sacrificial template for the micro and mesopore formations was discussed from a viewpoint to establish novel micro and mesoporous structure controlling technologies through the polymer-derived ceramics (PDCs route.

  17. Novel Materials Containing Single-Wall Carbon Nanotubes Wrapped in Polymer Molecules

    Science.gov (United States)

    Smalley, Richard E.; O'Connell, Michael J.; Smith, Kenneth; Colbert, Daniel T.

    2009-01-01

    In this design, single-wall carbon nanotubes (SWNTs) have been coated in polymer molecules to create a new type of material that has low electrical conductivity, but still contains individual nanotubes, and small ropes of individual nanotubes, which are themselves good electrical conductors and serve as small conducting rods immersed in an electrically insulating matrix. The polymer is attached through weak chemical forces that are primarily non-covalent in nature, caused primarily through polarization rather than the sharing of valence electrons. Therefore, the electronic structure of the SWNT involved is substantially the same as that of free, individual (and small ropes of) SWNT. Their high conductivity makes the individual nanotubes extremely electrically polarizable, and materials containing these individual, highly polarizable molecules exhibit novel electrical properties including a high dielectric constant.

  18. Rapid gated Thallium-201 perfusion SPECT - clinically feasible?

    International Nuclear Information System (INIS)

    Wadhwa, S.S.; Mansberg, R.; Fernandes, V.B.; Wilkinson, D.; Abatti, D.

    1998-01-01

    Full text: Standard dose energy window optimised Thallium-201 (Tl-201) SPECT has about half the counts of a standard dose from Technetium-99m Sestamibi (Tc99m-Mibi) gated perfusion SPECT. This study investigates the clinical feasibility of rapid energy window optimised Tl-201 gated perfusion SPECT (gated-TI) and compares quantitative left ventricular ejection fraction (LVEF) and visually assessed image quality for wall motion and thickening to analogous values obtained from Tc99m-Mibi gated perfusion SPECT (gated - mibi). Methods: We studied 60 patients with a rest gated Tl-201 SPECT (100 MBq, 77KeV peak, 34% window, 20 sec/projection) followed by a post stress gated Sestamibi SPECT (1GBq, 140KeV, 20% window, 20 sec/projection) separate dual isotope protocol. LVEF quantitation was performed using commercially available software (SPECTEF, General Electric). Visual grading of image quality for wall thickening and motion was performed using a three-point scale (excellent, good and poor). Results: LVEF for gated Tl-201 SPECT was 59.6 ± 12.0% (Mean ± SD). LVEF for gated Sestamibi SPECT was 60.4 ±11.4% (Mean ± SD). These were not significantly different (P=0.27, T-Test). There was good correlation (r=0.9) between gated-TI and gated-mibi LVEF values. The quality of gated-Tl images was ranked as excellent, good and poor in 12, 50 and 38% of the patients respectively. Image quality was better in gated-mibi SPECT, with ratings of 12, 62 and 26% respectively. Conclusion: Rapid gated Thallium-201 acquisition with energy window optimisation can be effectively performed on majority of patients and offers the opportunity to assess not only myocardial perfusion and function, as with Technetium based agents, but also viability using a single day one isotope protocol

  19. Single crystalline essentially cubic hafnium, zirconium pyrophosphate luminescent material having improved brightness

    International Nuclear Information System (INIS)

    Chenot, C.F.; Mathrs, J.E.; Shaffer, F.N.

    1980-01-01

    It has been discovered that when (Hf,Zr) P 2 O 5 is prepared by reacting a mixutre of MO 2 , A 2 O and P 2 O 5 . (where M is zirconium, and A is an alkali metal, lithium, sodium or potassium), large single-crystalline cubic particles result, which when separated from an aqueous-soluble alkali metal-containing second phase exhibit improved intensity of ultraviolet emissions upon x-ray excitation. When used in x-ray intensifying screens with conventional silver halide emulsion x-ray film, such improved lumiescent material The invention includes material of the composition (Hfsub(1-x)Zrsub(x)) P 2 O 7 , where range from 0 to 1, having strong emission peaking at about 340 nm with controlled persistence, and also includes a method for producing such luminescent materials, and x-ray intensifying screens incorporating such materials having values of x within the range of about 0.005 to 0.5. (LL)

  20. Voltage-gated Proton Channels

    Science.gov (United States)

    DeCoursey, Thomas E.

    2014-01-01

    Voltage-gated proton channels, HV1, have vaulted from the realm of the esoteric into the forefront of a central question facing ion channel biophysicists, namely the mechanism by which voltage-dependent gating occurs. This transformation is the result of several factors. Identification of the gene in 2006 revealed that proton channels are homologues of the voltage-sensing domain of most other voltage-gated ion channels. Unique, or at least eccentric, properties of proton channels include dimeric architecture with dual conduction pathways, perfect proton selectivity, a single-channel conductance ~103 smaller than most ion channels, voltage-dependent gating that is strongly modulated by the pH gradient, ΔpH, and potent inhibition by Zn2+ (in many species) but an absence of other potent inhibitors. The recent identification of HV1 in three unicellular marine plankton species has dramatically expanded the phylogenetic family tree. Interest in proton channels in their own right has increased as important physiological roles have been identified in many cells. Proton channels trigger the bioluminescent flash of dinoflagellates, facilitate calcification by coccolithophores, regulate pH-dependent processes in eggs and sperm during fertilization, secrete acid to control the pH of airway fluids, facilitate histamine secretion by basophils, and play a signaling role in facilitating B-cell receptor mediated responses in B lymphocytes. The most elaborate and best-established functions occur in phagocytes, where proton channels optimize the activity of NADPH oxidase, an important producer of reactive oxygen species. Proton efflux mediated by HV1 balances the charge translocated across the membrane by electrons through NADPH oxidase, minimizes changes in cytoplasmic and phagosomal pH, limits osmotic swelling of the phagosome, and provides substrate H+ for the production of H2O2 and HOCl, reactive oxygen species crucial to killing pathogens. PMID:23798303

  1. A self-aligned gate definition process with submicron gaps

    NARCIS (Netherlands)

    Warmerdam, L.F.P.; Aarnink, Antonius A.I.; Holleman, J.; Wallinga, Hans

    1989-01-01

    A self-aligned gate definition process is proposed. Spacings between adjacent gates of 0.5 µm and smaller are fabricated. The spacing is realized by an edge-etch technique, combined with anisotropic plasma etching of the single poly-silicon layer. Straight gaps with minor width variation are

  2. Single Visit Apexification Procedure of a Traumatically Injured Tooth with a Novel Bioinductive Material (Biodentine)

    Science.gov (United States)

    Jingarwar, Mahesh Madhukar; Pathak, Anuradha

    2015-01-01

    ABSTRACT Aim of this article is to present a case wherein single visit apexification of a traumatically injured tooth was done with a bioactive material–Biodentine. An injury sustained between the ages of 6 and 14 can adversely affect pulpal health and interrupt root development. In these instances, apexification is generally the preferred treatment. A 10 years old male patient presented with coronal fracture of the left upper central incisor. Clinical and radiographic assessment showed negative pulpal sensibility and arrested apical root development. Artificial apical barrier induction with Biodentine followed by endodontic treatment and prosthetic rehabilitation was decided as the line of treatment. To conclude, this bioactive and biocompatible calcium-based cement can regenerate damaged dental tissues and represents a promising alternative to the conventional multivisit apexification technique. Clinical significance: Biodentine which is a biologically active cement can be an efficient alternative to the conventional apexification materials which were hitherto recommended. How to cite this article: Bajwa NK, Jingarwar MM, Pathak A. Single Visit Apexification Procedure of a Traumatically Injured Tooth with a Novel Bioinductive Material (Biodentine). Int J Clin Pediatr Dent 2015;8(1):58-61. PMID:26124583

  3. Error-Transparent Quantum Gates for Small Logical Qubit Architectures

    Science.gov (United States)

    Kapit, Eliot

    2018-02-01

    One of the largest obstacles to building a quantum computer is gate error, where the physical evolution of the state of a qubit or group of qubits during a gate operation does not match the intended unitary transformation. Gate error stems from a combination of control errors and random single qubit errors from interaction with the environment. While great strides have been made in mitigating control errors, intrinsic qubit error remains a serious problem that limits gate fidelity in modern qubit architectures. Simultaneously, recent developments of small error-corrected logical qubit devices promise significant increases in logical state lifetime, but translating those improvements into increases in gate fidelity is a complex challenge. In this Letter, we construct protocols for gates on and between small logical qubit devices which inherit the parent device's tolerance to single qubit errors which occur at any time before or during the gate. We consider two such devices, a passive implementation of the three-qubit bit flip code, and the author's own [E. Kapit, Phys. Rev. Lett. 116, 150501 (2016), 10.1103/PhysRevLett.116.150501] very small logical qubit (VSLQ) design, and propose error-tolerant gate sets for both. The effective logical gate error rate in these models displays superlinear error reduction with linear increases in single qubit lifetime, proving that passive error correction is capable of increasing gate fidelity. Using a standard phenomenological noise model for superconducting qubits, we demonstrate a realistic, universal one- and two-qubit gate set for the VSLQ, with error rates an order of magnitude lower than those for same-duration operations on single qubits or pairs of qubits. These developments further suggest that incorporating small logical qubits into a measurement based code could substantially improve code performance.

  4. Long-range protein electron transfer observed at the single-molecule level: In situ mapping of redox-gated tunneling resonance

    DEFF Research Database (Denmark)

    Chi, Qijin; Farver, O; Ulstrup, Jens

    2005-01-01

    A biomimetic long-range electron transfer (ET) system consisting of the blue copper protein azurin, a tunneling barrier bridge, and a gold single-crystal electrode was designed on the basis of molecular wiring self-assembly principles. This system is sufficiently stable and sensitive in a quasi...... on the redox potential. Maximum resonance appears around the equilibrium redox potential of azurin with an on/off current ratio of approximate to 9. Simulation analyses, based on a two-step interfacial ET model for the scanning tunneling microscopy redox process, were performed and provide quantitative...

  5. The rise of 3-d single-ion magnets in molecular magnetism: towards materials from molecules?

    Science.gov (United States)

    Frost, Jamie M; Harriman, Katie L M; Murugesu, Muralee

    2016-04-21

    Single-molecule magnets (SMMs) that contain one spin centre (so-called single-ion magnets) theoretically represent the smallest possible unit for spin-based electronic devices. The realisation of this and related technologies, depends on first being able to design systems with sufficiently large energy barriers to magnetisation reversal, U eff , and secondly, on being able to organise these molecules into addressable arrays. In recent years, significant progress has been made towards the former goal - principally as a result of efforts which have been directed towards studying complexes based on highly anisotropic lanthanide ions, such as Tb(iii) and Dy(iii). Since 2013 however, and the remarkable report by Long and co-workers of a linear Fe(i) system exhibiting U eff = 325 K, single-ion systems of transition metals have undergone something of a renaissance in the literature. Not only do they have important lessons to teach us about anisotropy and relaxation dynamics in the quest to enhance U eff , the ability to create strongly coupled spin systems potentially offers access to a whole of host of 1, 2 and 3-dimensional materials with interesting structural and physical properties. This perspective summarises recent progress in this rapidly expanding sub-genre of molecular magnetism from the viewpoint of the synthetic chemist, with a particular focus on the lessons that have so far been learned from single-ion magnets of the d-block, and, the future research directions which we feel are likely to emerge in the coming years.

  6. Gated community Na Krutci

    Czech Academy of Sciences Publication Activity Database

    Hnídková, Vendula

    2012-01-01

    Roč. 91, č. 12 (2012), s. 750-752 ISSN 0042-4544 Institutional support: RVO:68378033 Keywords : Gated community * Czech contemporary architecture * Kuba Pilař Subject RIV: AL - Art, Architecture , Cultural Heritage

  7. Engineering evaluation/cost analysis for the proposed removal of contaminated materials from Pad 1 at the Elza Gate site, Oak Ridge, Tennessee

    International Nuclear Information System (INIS)

    1990-06-01

    This engineering evaluation/cost analysis (EE/CA) has been prepared in support of the proposed removal action for cleanup of radioactively contaminated concrete and soil beneath a building on privately owned commercial property in Oak Ridge, Tennessee. The property, known as the Elza Gate site, became contaminated with uranium-238, radium-226, thorium-232, thorium-230, and decay products as a result of the Manhattan Engineer District storing uranium ore and ore processing residues at the site in the early 1940s. The US Department of Energy (DOE) has responsibility for cleanup of the property under its Formerly Utilized Sites Remedial Action Program (FUSRAP). The DOE plans to remove the cracked and worn concrete pad and contaminated subsoil beneath the pad, after which the property owner/tenant will provide clean backfill and new concrete. Portions of the pad and subsoil are contaminated and, if stored or disposed of improperly, may represent a potential threat to public health or welfare and the environment. The EE/CA report is the appropriate documentation for the proposed removal action, as identified in guidance from the US Environmental Protection Agency. the objective of the EE/CA report, in addition to identifying the planned removal action, is to document the selection of response activities that will mitigate the potential for release of contaminants from the property into the environment and minimize the related threats to public health or welfare and the environment. 7 refs., 2 figs., 3 tabs

  8. Engineering evaluation/cost analysis for the proposed removal of contaminated materials from pad 1 at the Elza Gate site, Oak Ridge, Tennessee

    International Nuclear Information System (INIS)

    1990-09-01

    This engineering evaluation/cost analysis (EE/CA) has been prepared in support of the proposed removal action for cleanup of radioactively contaminated concrete and soil beneath a building on privately owned commercial property in Oak Ridge, Tennessee. The property, known as the Elza Gate site, became contaminated with uranium-238, radium-226, thorium-232, thorium-230, and decay products as a result of the Manhattan Engineer District storing uranium ore and ore processing residues at the site in the early 1940s. The US Department of Energy (DOE) has responsibility for cleanup of the property under its Formerly Utilized Sites Remedial Action Program (FUSRAP). The DOE plans to remove the cracked and worn concrete pad and contaminated subsoil beneath the pad, after which the property owner/tenant will provide clean backfill and new concrete. Portions of the pad and subsoil are contaminated and, if stored or disposed of improperly, may represent a potential threat to public health or welfare and the environment. The EE/CA report is the appropriate documentation for the proposed removal action, as identified in guidance from the US Environmental Protection Agency. The objective of the EE/CA report, in addition to identifying the planned removal action, is to document the selection of response activities that will mitigate the potential for release of contaminants from the property into the environment and minimize the related threats to public health or welfare and the environment. 7 refs., 2 figs., 3 tabs

  9. Reversible gates and circuits descriptions

    Science.gov (United States)

    Gracki, Krzystof

    2017-08-01

    This paper presents basic methods of reversible circuit description. To design reversible circuit a set of gates has to be chosen. Most popular libraries are composed of three types of gates so called CNT gates (Control, NOT and Toffoli). The gate indexing method presented in this paper is based on the CNT gates set. It introduces a uniform indexing of the gates used during synthesis process of reversible circuits. The paper is organized as follows. Section 1 recalls basic concepts of reversible logic. In Section 2 and 3 a graphical representation of the reversible gates and circuits is described. Section 4 describes proposed uniform NCT gates indexing. The presented gate indexing method provides gate numbering scheme independent of lines number of the designed circuit. The solution for a circuit consisting of smaller number of lines is a subset of solution for a larger circuit.

  10. Single potential electrodeposition of nanostructured battery materials for lithium-ion batteries

    Science.gov (United States)

    Mosby, James Matthew

    different sizes, shapes, and surface areas. This is advantageous because high surface area materials benefit from improved kinetics for solid state transformations and from decreases in mechanical degradation that occurs during the lithiation and delithiation of battery materials. Intermetallic materials are an alternative to conventional anode materials because they have high capacities and react reversibly with lithium at potentials that hinder the dendrite formation of metallic lithium. Unfortunately, the volume expansion associated with the lithiation and delithiation of intermetallic materials is usually large (over 300%). With this in mind a procedure for the electrodeposition of Cu2Sb from aqueous solutions was developed and is presented in this thesis. Cu2Sb is an intermetallic that lithiates at potentials more positive than the potential needed to plate lithium metal, and has a volume expansion less than 100%. Electrodeposition of an intermetallic with a relatively small volume expansion and with high surface area morphology should dramatically reduce material degradation during battery cycling, thus promoting the life of the material. To electrodeposit Cu2Sb from aqueous solutions, soluble salts of Cu2+ and Sb3+ were needed. There are many Cu2+ salts that are highly soluble in water, but most Sb 3+ salts cause formation of Sb2O3 in aqueous solutions. To obtain Sb3+ in aqueous solutions, citric acid was used as a complexing agent. The results presented in this dissertation show that solution speciation plays an important role in the electrochemistry of aqueous citrate solutions of both copper and antimony. The cyclic voltammograms (CVs) presented here show that the reduction potential of Cu2+ shifted in the negative direction and the reduction potential of Sb 3+ shifted in the positive direction with an increase in pH. Also, Cu2Sb films were deposited at a single potential (-1050 mV vs. SSCE) from aqueous solutions at pH 6. We determined that the deposition

  11. Advanced insulated gate bipolar transistor gate drive

    Science.gov (United States)

    Short, James Evans [Monongahela, PA; West, Shawn Michael [West Mifflin, PA; Fabean, Robert J [Donora, PA

    2009-08-04

    A gate drive for an insulated gate bipolar transistor (IGBT) includes a control and protection module coupled to a collector terminal of the IGBT, an optical communications module coupled to the control and protection module, a power supply module coupled to the control and protection module and an output power stage module with inputs coupled to the power supply module and the control and protection module, and outputs coupled to a gate terminal and an emitter terminal of the IGBT. The optical communications module is configured to send control signals to the control and protection module. The power supply module is configured to distribute inputted power to the control and protection module. The control and protection module outputs on/off, soft turn-off and/or soft turn-on signals to the output power stage module, which, in turn, supplies a current based on the signal(s) from the control and protection module for charging or discharging an input capacitance of the IGBT.

  12. The human respiratory gate

    Science.gov (United States)

    Eckberg, Dwain L.

    2003-01-01

    Respiratory activity phasically alters membrane potentials of preganglionic vagal and sympathetic motoneurones and continuously modulates their responsiveness to stimulatory inputs. The most obvious manifestation of this 'respiratory gating' is respiratory sinus arrhythmia, the rhythmic fluctuations of electrocardiographic R-R intervals observed in healthy resting humans. Phasic autonomic motoneurone firing, reflecting the throughput of the system, depends importantly on the intensity of stimulatory inputs, such that when levels of stimulation are low (as with high arterial pressure and sympathetic activity, or low arterial pressure and vagal activity), respiratory fluctuations of sympathetic or vagal firing are also low. The respiratory gate has a finite capacity, and high levels of stimulation override the ability of respiration to gate autonomic responsiveness. Autonomic throughput also depends importantly on other factors, including especially, the frequency of breathing, the rate at which the gate opens and closes. Respiratory sinus arrhythmia is small at rapid, and large at slow breathing rates. The strong correlation between systolic pressure and R-R intervals at respiratory frequencies reflects the influence of respiration on these two measures, rather than arterial baroreflex physiology. A wide range of evidence suggests that respiratory activity gates the timing of autonomic motoneurone firing, but does not influence its tonic level. I propose that the most enduring significance of respiratory gating is its use as a precisely controlled experimental tool to tease out and better understand otherwise inaccessible human autonomic neurophysiological mechanisms.

  13. Gallium arsenide processing for gate array logic

    Science.gov (United States)

    Cole, Eric D.

    1989-01-01

    The development of a reliable and reproducible GaAs process was initiated for applications in gate array logic. Gallium Arsenide is an extremely important material for high speed electronic applications in both digital and analog circuits since its electron mobility is 3 to 5 times that of silicon, this allows for faster switching times for devices fabricated with it. Unfortunately GaAs is an extremely difficult material to process with respect to silicon and since it includes the arsenic component GaAs can be quite dangerous (toxic) especially during some heating steps. The first stage of the research was directed at developing a simple process to produce GaAs MESFETs. The MESFET (MEtal Semiconductor Field Effect Transistor) is the most useful, practical and simple active device which can be fabricated in GaAs. It utilizes an ohmic source and drain contact separated by a Schottky gate. The gate width is typically a few microns. Several process steps were required to produce a good working device including ion implantation, photolithography, thermal annealing, and metal deposition. A process was designed to reduce the total number of steps to a minimum so as to reduce possible errors. The first run produced no good devices. The problem occurred during an aluminum etch step while defining the gate contacts. It was found that the chemical etchant attacked the GaAs causing trenching and subsequent severing of the active gate region from the rest of the device. Thus all devices appeared as open circuits. This problem is being corrected and since it was the last step in the process correction should be successful. The second planned stage involves the circuit assembly of the discrete MESFETs into logic gates for test and analysis. Finally the third stage is to incorporate the designed process with the tested circuit in a layout that would produce the gate array as a GaAs integrated circuit.

  14. Gate-tunable carbon nanotube–MoS2 heterojunction p-n diode

    Science.gov (United States)

    Jariwala, Deep; Sangwan, Vinod K.; Wu, Chung-Chiang; Prabhumirashi, Pradyumna L.; Geier, Michael L.; Marks, Tobin J.; Lauhon, Lincoln J.; Hersam, Mark C.

    2013-01-01

    The p-n junction diode and field-effect transistor are the two most ubiquitous building blocks of modern electronics and optoelectronics. In recent years, the emergence of reduced dimensionality materials has suggested that these components can be scaled down to atomic thicknesses. Although high-performance field-effect devices have been achieved from monolayered materials and their heterostructures, a p-n heterojunction diode derived from ultrathin materials is notably absent and constrains the fabrication of complex electronic and optoelectronic circuits. Here we demonstrate a gate-tunable p-n heterojunction diode using semiconducting single-walled carbon nanotubes (SWCNTs) and single-layer molybdenum disulfide as p-type and n-type semiconductors, respectively. The vertical stacking of these two direct band gap semiconductors forms a heterojunction with electrical characteristics that can be tuned with an applied gate bias to achieve a wide range of charge transport behavior ranging from insulating to rectifying with forward-to-reverse bias current ratios exceeding 104. This heterojunction diode also responds strongly to optical irradiation with an external quantum efficiency of 25% and fast photoresponse <15 μs. Because SWCNTs have a diverse range of electrical properties as a function of chirality and an increasing number of atomically thin 2D nanomaterials are being isolated, the gate-tunable p-n heterojunction concept presented here should be widely generalizable to realize diverse ultrathin, high-performance electronics and optoelectronics. PMID:24145425

  15. Millimeter-Wave Dielectric Properties of Single Crystal Ferroelectric and Dielectric Materials

    Energy Technology Data Exchange (ETDEWEB)

    McCloy, John S.; Korolev, Konstantin A.; Li, Zijing; Afsar, Mohammed N.; Sundaram, S. K.

    2011-01-03

    Transmittance measurements on various single crystal ferroelectric materials over a broad millimeter-wave frequency range have been performed. Frequency dependence of the complex dielectric permittivity has been determined in the millimeter wave region for the first time. The measurements have been employed using a free-space quasi-optical millimeter-wave spectrometer equipped with a set of high power backward wave oscillators (BWOs) as sources of coherent radiation, tunable in the range from 30 - 120 GHz. The uncertainties and possible sources of instrumentation and measurement errors related to the free-space millimeter-wave technique are discussed. This work has demonstrated that precise MMW permittivities can be obtained even on small thin crystals using the BWO quasi-optical approach.

  16. Novel single-beam optical spectrophotometer for fast luminescence, absorption, and reflection measurements of turbid materials

    Science.gov (United States)

    Schmidt, Werner

    1995-02-01

    A novel spectrophotometer based on the deflection of a secondary element for measuring clear and highly turbid materials within the millisecond time range is developed. The number of optical components of the monochromator is reduced to the absolute minimum. This results in excellent light throughput and a low stray-light level. The spectrophotometer has been designed allowing spectral measurements of absorption, transmission, reflection, and luminescence in a single-beam mode, as documented by various examples. Its design is highly flexible and the price/quality relation might be adopted to the envisaged purpose. The main philosophy is to relocate as many functions as possible form the hardware to the software part of the spectrophotometer. Several novel procedures based on old concepts are proposed. An appropriate computer program providing data acquisition, control functions as well as numerous analytical capabilities is developed on the basis of the compiler language power basic and indispensably 'fast' routines are written in assembler language.

  17. Angle-resolved imaging of single-crystal materials with MeV helium ions

    International Nuclear Information System (INIS)

    Strathman, M.D.; Baumann, S.

    1992-01-01

    The simplest form of angle-resolved mapping for single-crystal materials is the creation of a channeling angular scan. Several laboratories have expanded this simple procedure to include mapping as a function of two independent tilts. These angle-resolved images are particularly suited to the assessment of crystal parameters including disorder, lattice location of impurities, and lattice stress. This paper will describe the use of the Charles Evans and Associates RBS-400 scattering chamber for acquisition, display, and analysis of angle-resolved images obtained from backscattered helium ions. Typical data acquisition times are 20 min for a ±2deg X-Y tilt scan with 2500 pixels (8/100deg resolution), and 10 nC per pixel. In addition, we will present a method for automatically aligning crystals for channeling measurements based on this imaging technology. (orig.)

  18. Phonons of single quintuple Bi 2 Te 3 and Bi 2 Se 3 films and bulk materials

    KAUST Repository

    Cheng, Wei

    2011-03-10

    Phonons of single quintuple films of Bi2Te3 and Bi2Se3 and corresponding bulk materials are calculated in detail by MedeA (a trademark of Materials Design) and Vienna ab initio simulation package (VASP). The calculated results with and without spin-orbit couplings are compared, and the important roles that the spin-orbit coupling plays in these materials are discussed. A symmetry breaking caused by the anharmonic potentials around Bi atoms in the single quintuple films is identified and discussed. The observed Raman intensity features in Bi 2Te3 and Bi2Se3 quintuple films are explained. © 2011 American Physical Society.

  19. Anatomic Double Bundle single tunnel Foreign Material Free ACL-Reconstruction - a technical note.

    Science.gov (United States)

    Felmet, Gernot

    2011-10-01

    The anterior cruciate ligament (ACL) consists of two bundles, the anteromedial (AM) and posterolateral bundle (PM). Double bundle reconstructions appear to give better rotational stability. The usual technique is to make two tunnels in the femur and two in the tibia. This is difficult and in small knees may not even be possible. We have developed a foreign material free press fit fixation for double bundle ACL reconstruction using a single femoral tunnel ((R)). This is based on the ALL PRESS FIT ACL reconstruction. It is suitable for the most common medium and, otherwise difficult, small sizes of knees. Using diamond edged wet grinding hollow reamers, bone cylinders in different diameters are harvested from the implantation tunnels of the tibia and femur and used for the press fit fixation. Using the press fit technique the graft is first fixed in tibia. It is then similarly fixed under tension in the femoral side with the knee in 120 degree flexion. This is called Bottom To Top Fixation (BTT). On extending the knee the graft tension is self adapting. Depending on the size of the individual knee, the diameter of the femoral bone plug is varied from 8 to 13 mm to achieve an anatomic spread with a double bundle-like insertion. The tibia tunnel can be applied with two 7 or 8 mm diameter tunnels overlapping to a semi oval tunnel between 10 to 13 mm. Since May 2003 we have carried out ACL-reconstructions with Hamstring grafts without foreign material using the ALL PRESS FIT technique. Initially, an 8 mm press fit fixation was used proximally with good results. Since April 2008, the range of diameters was increased up to 13 mm. The results of the Lachman tests have been good to excellent. Results of the Pivot shift test suggested more stability with femoral broader diameters of 9,5 to 13 mm. The foreign material free fixation of ham-string in the ALL PRESS FIT Bottom To Top Fixation is a successful method for ACL Reconstruction. The Diamond Instruments and tubed guiding

  20. Noisy signaling through promoter logic gates.

    Science.gov (United States)

    Gerstung, Moritz; Timmer, Jens; Fleck, Christian

    2009-01-01

    We study the influence of noisy transcription factor signals on cis-regulatory promoter elements. These elements process the probability of binary binding events analogous to computer logic gates. At equilibrium, this probability is given by the so-called input function. We show that transcription factor noise causes deviations from the equilibrium value due to the nonlinearity of the input function. For a single binding site, the correction is always negative resulting in an occupancy below the mean-field level. Yet for more complex promoters it depends on the correlation of the transcription factor signals and the geometry of the input function. We present explicit solutions for the basic types of AND and OR gates. The correction size varies among these different types of gates and signal types, mainly being larger in AND gates and for correlated fluctuations. In all cases we find excellent agreement between the analytical results and numerical simulations. We also study the E. coli Lac operon as an example of an AND NOR gate. We present a consistent mathematical method that allows one to separate different sources of noise and quantifies their effect on promoter occupation. A surprising result of our analysis is that Poissonian molecular fluctuations, in contrast to external fluctuations, do no contribute to the correction.

  1. Cardiac gated ventilation

    Science.gov (United States)

    Hanson, C. William, III; Hoffman, Eric A.

    1995-05-01

    There are several theoretic advantages to synchronizing positive pressure breaths with the cardiac cycle, including the potential for improving distribution of pulmonary and myocardial blood flow and enhancing cardiac output. We evaluated the effects of synchronizing respiration to the cardiac cycle using a programmable ventilator and electron beam CT (EBCT) scanning. The hearts of anesthetized dogs were imaged during cardiac gated respiration with a 50msec scan aperture. Multislice, short axis, dynamic image data sets spanning the apex to base of the left ventricle were evaluated to determine the volume of the left ventricular chamber at end-diastole and end-systole during apnea, systolic and diastolic cardiac gating. We observed an increase in cardiac output of up to 30% with inspiration gated to the systolic phase of the cardiac cycle in a nonfailing model of the heart.

  2. Gene expression, single nucleotide variant and fusion transcript discovery in archival material from breast tumors.

    Directory of Open Access Journals (Sweden)

    Nadine Norton

    Full Text Available Advantages of RNA-Seq over array based platforms are quantitative gene expression and discovery of expressed single nucleotide variants (eSNVs and fusion transcripts from a single platform, but the sensitivity for each of these characteristics is unknown. We measured gene expression in a set of manually degraded RNAs, nine pairs of matched fresh-frozen, and FFPE RNA isolated from breast tumor with the hybridization based, NanoString nCounter (226 gene panel and with whole transcriptome RNA-Seq using RiboZeroGold ScriptSeq V2 library preparation kits. We performed correlation analyses of gene expression between samples and across platforms. We then specifically assessed whole transcriptome expression of lincRNA and discovery of eSNVs and fusion transcripts in the FFPE RNA-Seq data. For gene expression in the manually degraded samples, we observed Pearson correlations of >0.94 and >0.80 with NanoString and ScriptSeq protocols, respectively. Gene expression data for matched fresh-frozen and FFPE samples yielded mean Pearson correlations of 0.874 and 0.783 for NanoString (226 genes and ScriptSeq whole transcriptome protocols respectively, p<2x10(-16. Specifically for lincRNAs, we observed superb Pearson correlation (0.988 between matched fresh-frozen and FFPE pairs. FFPE samples across NanoString and RNA-Seq platforms gave a mean Pearson correlation of 0.838. In FFPE libraries, we detected 53.4% of high confidence SNVs and 24% of high confidence fusion transcripts. Sensitivity of fusion transcript detection was not overcome by an increase in depth of sequencing up to 3-fold (increase from ~56 to ~159 million reads. Both NanoString and ScriptSeq RNA-Seq technologies yield reliable gene expression data for degraded and FFPE material. The high degree of correlation between NanoString and RNA-Seq platforms suggests discovery based whole transcriptome studies from FFPE material will produce reliable expression data. The RiboZeroGold ScriptSeq protocol

  3. Allosteric gating mechanism underlies the flexible gating of KCNQ1 potassium channels

    Science.gov (United States)

    Osteen, Jeremiah D.; Barro-Soria, Rene; Robey, Seth; Sampson, Kevin J.; Kass, Robert S.; Larsson, H. Peter

    2012-01-01

    KCNQ1 (Kv7.1) is a unique member of the superfamily of voltage-gated K+ channels in that it displays a remarkable range of gating behaviors tuned by coassembly with different β subunits of the KCNE family of proteins. To better understand the basis for the biophysical diversity of KCNQ1 channels, we here investigate the basis of KCNQ1 gating in the absence of β subunits using voltage-clamp fluorometry (VCF). In our previous study, we found the kinetics and voltage dependence of voltage-sensor movements are very similar to those of the channel gate, as if multiple voltage-sensor movements are not required to precede gate opening. Here, we have tested two different hypotheses to explain KCNQ1 gating: (i) KCNQ1 voltage sensors undergo a single concerted movement that leads to channel opening, or (ii) individual voltage-sensor movements lead to channel opening before all voltage sensors have moved. Here, we find that KCNQ1 voltage sensors move relatively independently, but that the channel can conduct before all voltage sensors have activated. We explore a KCNQ1 point mutation that causes some channels to transition to the open state even in the absence of voltage-sensor movement. To interpret these results, we adopt an allosteric gating scheme wherein KCNQ1 is able to transition to the open state after zero to four voltage-sensor movements. This model allows for widely varying gating behavior, depending on the relative strength of the opening transition, and suggests how KCNQ1 could be controlled by coassembly with different KCNE family members. PMID:22509038

  4. Impact of intracoronary injection of mononuclear bone marrow cells in acute myocardial infarction on left ventricular perfusion and function: a 6-month follow-up gated {sup 99m}Tc-MIBI single-photon emission computed tomography study

    Energy Technology Data Exchange (ETDEWEB)

    Lipiec, Piotr [Medical University of Lodz, 2nd Department of Cardiology, Lodz (Poland); Medical University of Lodz, 2nd Department of Cardiology, Bieganski Hospital, Lodz (Poland); Krzeminska-Pakula, Maria; Plewka, Michal; Kasprzak, Jaroslaw D. [Medical University of Lodz, 2nd Department of Cardiology, Lodz (Poland); Kusmierek, Jacek; Plachcinska, Anna; Szuminski, Remigiusz [Medical University of Lodz, Department of Nuclear Medicine, Lodz (Poland); Robak, Tadeusz; Korycka, Anna [Medical University of Lodz, Department of Hematology, Lodz (Poland)

    2009-04-15

    We investigated the impact of intracoronary injection of autologous mononuclear bone marrow cells (BMC) in patients with acute ST elevation myocardial infarction (STEMI) on left ventricular volumes, global and regional systolic function and myocardial perfusion. The study included 39 patients with first anterior STEMI treated successfully with primary percutaneous coronary intervention. They were randomly assigned to the treatment group or the control group in a 2:1 ratio. The patients underwent baseline gated single-photon emission computed tomography (G-SPECT) 3-10 days after STEMI with quantitative and qualitative analysis of left ventricular perfusion and systolic function. On the following day, patients from the BMC treatment group were subjected to bone marrow aspiration, mononuclear BMC isolation and intracoronary injection. No placebo procedure was performed in the control group. G-SPECT was repeated 6 months after STEMI. Baseline and follow-up G-SPECT studies were available for 36 patients. At 6 months in the BMC group we observed a significantly enhanced improvement in the mean extent of the perfusion defect, the left ventricular perfusion score index, the infarct area perfusion score and the infarct area wall motion score index compared to the control group (p=0.01-0.04). However, the changes in left ventricular volume, ejection fraction and the left ventricular wall motion score index as well as the relative changes in the infarct area wall motion score index did not differ significantly between the groups. Intracoronary injection of autologous mononuclear BMC in patients with STEMI improves myocardial perfusion at 6 months. The benefit in infarct area systolic function is less pronounced and there is no apparent improvement of global left ventricular systolic function. (orig.)

  5. Epitaxial top-gated atomic-scale silicon wire in a three-dimensional architecture.

    Science.gov (United States)

    McKibbin, S R; Scappucci, G; Pok, W; Simmons, M Y

    2013-02-01

    Three-dimensional (3D) control of dopant profiles in silicon is a critical requirement for fabricating atomically precise transistors. We demonstrate conductance modulation through an atomic scale 3 nm wide δ-doped silicon-phosphorus wire using a vertically separated epitaxial doped Si:P top-gate. We show that intrinsic crystalline silicon grown at low temperatures (∼250 °C) serves as an effective gate dielectric permitting us to achieve large gate ranges (∼2.6 V) with leakage currents below 1 pA. Combining scanning tunneling lithography for precise lateral confinement, with monolayer doping and low temperature epitaxial overgrowth for precise vertical confinement, we can realize multiple layers of nano-patterned dopants in a single crystal material. These results demonstrate the viability of highly doped, vertically separated epitaxial gates in an all-crystalline architecture with long-term implications for monolithic 3D silicon circuits and for the realization of atomically precise donor architectures for quantum computing.

  6. Ethylenediaminium di(2-nitrophenolate) single crystals as materials for optical second harmonic generation

    Science.gov (United States)

    Thangaraj, M.; Ravi, G.; Sabari Girisun, T. C.

    2014-09-01

    An organic second harmonic generation (SHG) active material, ethylenediaminium di(2-nitrophenolate) (EDA2NP) was synthesized through proton transfer reaction. Good quality single crystals of dimension 6×4×2 mm3 were grown by solvent evaporation method using ethanol as a solvent for the first time in literature. The lattice parameters of the grown crystals were determined by X-ray diffraction studies. Fourier Transform Infra Red (FT-IR) spectrum was recorded to identify the presence of various functional groups and the molecular structure was confirmed by nuclear magnetic resonance (NMR) spectrum. Thermal analyses of the grown crystal were carried out using thermo gravimetric-differential thermal analysis (TG-DTA) and differential scanning calorimetry (DSC) curves. Optical (UV-vis-NIR) analysis shows that the grown crystals were found to be transparent (450-2500 nm) in the entire visible region. The existence of second harmonic generation signals was observed by using Nd:YAG laser with fundamental wavelength of 1064 nm.

  7. Non-destructive characterization of materials by single-sided NMR

    International Nuclear Information System (INIS)

    Goga, Nicolae-Octavian

    2007-01-01

    The experiments conducted in this work demonstrate the efficiency and sensitivity of single-sided NMR for investigating macromolecular materials on large time and length scales. Elastomers can readily be characterized by unilateral NMR of protons in terms of a variety of parameters, which correlate with the overall molecular mobility. In this way information about the cross-link density, state of cure and strain, the effects of aging and product heterogeneity can obtained. For these purposes, the NMR-MOUSE was used to optimize product development and to monitor product and production quality on-line. The sensor is also suitable for nondestructive probing of the mechanical deformation in cross-linked elastomers. A special magnet design that fits a stress-strain device has been used for complementary investigation of a series of different rubber stripes during mechanical testing. The profile NMR-MOUSE was found to be a unique tool for the characterization of changes induced by the UV irradiation in natural rubber. The aging profiles were interpreted for the first time based on a novel model in which the radiation absorption coefficient depends on the depth in the sample. (orig.)

  8. A study of the effect of binary oxide materials in a single droplet vapor explosion

    Energy Technology Data Exchange (ETDEWEB)

    Hansson, R.C., E-mail: rch@kth.se [Royal Institute of Technology, Stockholm (Sweden); Dinh, T.N.; Manickam, L.T. [Royal Institute of Technology, Stockholm (Sweden)

    2013-11-15

    In an effort to explore fundamental mechanisms that may govern the effect of melt material on vapor explosion's triggering, fine fragmentation and energetics, a series of experiments using a binary-oxide mixture with eutectic and non-eutectic compositions were performed. Interactions of a hot liquid (WO{sub 3}–CaO) droplet and a volatile liquid (water) were investigated in well-controlled, externally triggered, single-droplet experiments conducted in the Micro-interactions in steam explosion experiments (MISTEE) facility. The tests were visualized by means of a synchronized digital cinematography and continuous X-ray radiography system, called simultaneous high-speed acquisition of X-ray radiography and photography (SHARP). The acquired images followed by further analysis indicate milder interactions for the droplet with non-eutectic melt composition in the tests with low melt superheat, whereas no evident differences between eutectic and non-eutectic melt compositions regarding bubble dynamics, energetics and melt preconditioning was observed in the tests with higher melt superheat.

  9. The effect of binary oxide materials on a single droplet vapor explosion triggering

    Energy Technology Data Exchange (ETDEWEB)

    Hansson, R.C.; Manickam, L.T.; Dinh, T.N. [Royal Inst. of Tech., Stockholm (Sweden)

    2011-07-01

    In order to explore the fundamental mechanism dictated by the material influence on triggering, fine fragmentation and subsequent vapor explosion energetics, a series of experiments using a mixture of eutectic and non-eutectic binary oxide were initiated. Dynamics of the hot liquid (WO{sub 3}-CaO) droplet and the volatile liquid (water) were investigated in the MISTEE (Micro-Interactions in Steam Explosion Experiments) facility by performing well-controlled, externally triggered, single-droplet experiments, using a high-speed visualization system with synchronized digital cinematography and continuous X-ray radiography, called SHARP (Simultaneous High-speed Acquisition of X-ray Radiography and Photography). The acquired images followed by further analysis showed a milder interaction for the non-eutectic melt composition for the tests with low melt superheat, whether no evident differences between eutectic and non-eutectic melt compositions regarding bubble dynamics, energetics and melt preconditioning was perceived for the high melt superheat tests. (author)

  10. A study of the effect of binary oxide materials in a single droplet vapor explosion

    International Nuclear Information System (INIS)

    Hansson, R.C.; Dinh, T.N.; Manickam, L.T.

    2013-01-01

    In an effort to explore fundamental mechanisms that may govern the effect of melt material on vapor explosion's triggering, fine fragmentation and energetics, a series of experiments using a binary-oxide mixture with eutectic and non-eutectic compositions were performed. Interactions of a hot liquid (WO 3 –CaO) droplet and a volatile liquid (water) were investigated in well-controlled, externally triggered, single-droplet experiments conducted in the Micro-interactions in steam explosion experiments (MISTEE) facility. The tests were visualized by means of a synchronized digital cinematography and continuous X-ray radiography system, called simultaneous high-speed acquisition of X-ray radiography and photography (SHARP). The acquired images followed by further analysis indicate milder interactions for the droplet with non-eutectic melt composition in the tests with low melt superheat, whereas no evident differences between eutectic and non-eutectic melt compositions regarding bubble dynamics, energetics and melt preconditioning was observed in the tests with higher melt superheat

  11. Non-destructive characterization of materials by single-sided NMR

    Energy Technology Data Exchange (ETDEWEB)

    Goga, Nicolae-Octavian

    2007-08-20

    The experiments conducted in this work demonstrate the efficiency and sensitivity of single-sided NMR for investigating macromolecular materials on large time and length scales. Elastomers can readily be characterized by unilateral NMR of protons in terms of a variety of parameters, which correlate with the overall molecular mobility. In this way information about the cross-link density, state of cure and strain, the effects of aging and product heterogeneity can obtained. For these purposes, the NMR-MOUSE was used to optimize product development and to monitor product and production quality on-line. The sensor is also suitable for nondestructive probing of the mechanical deformation in cross-linked elastomers. A special magnet design that fits a stress-strain device has been used for complementary investigation of a series of different rubber stripes during mechanical testing. The profile NMR-MOUSE was found to be a unique tool for the characterization of changes induced by the UV irradiation in natural rubber. The aging profiles were interpreted for the first time based on a novel model in which the radiation absorption coefficient depends on the depth in the sample. (orig.)

  12. Single Point Incremental Forming to increase material knowledge and production flexibility

    Science.gov (United States)

    Habraken, A. M.

    2016-08-01

    Nowadays, manufactured pieces can be divided into two groups: mass production and production of low volume number of parts. Within the second group (prototyping or small batch production), an emerging solution relies on Incremental Sheet Forming or ISF. ISF refers to processes where the plastic deformation occurs by repeated contact with a relatively small tool. More specifically, many publications over the past decade investigate Single Point Incremental Forming (SPIF) where the final shape is determined only by the tool movement. This manufacturing process is characterized by the forming of sheets by means of a CNC controlled generic tool stylus, with the sheets clamped by means of a non-workpiece-specific clamping system and in absence of a partial or a full die. The advantage is no tooling requirements and often enhanced formability, however it poses a challenge in term of process control and accuracy assurance. Note that the most commonly used materials in incremental forming are aluminum and steel alloys however other alloys are also used especially for medical industry applications, such as cobalt and chromium alloys, stainless steel and titanium alloys. Some scientists have applied incremental forming on PVC plates and other on sandwich panels composed of propylene with mild steel and aluminum metallic foams with aluminum sheet metal. Micro incremental forming of thin foils has also been developed. Starting from the scattering of the results of Finite Element (FE) simulations, when one tries to predict the tool force (see SPIF benchmark of 2014 Numisheet conference), we will see how SPIF and even micro SPIF (process applied on thin metallic sheet with a few grains within the thickness) allow investigating the material behavior. This lecture will focus on the identification of constitutive laws, on the SPIF forming mechanisms and formability as well as the failure mechanism. Different hypotheses have been proposed to explain SPIF formability, they will be

  13. Single-crystal growth of ceria-based materials; Einkristallzuechtung von Materialien auf der Basis von Cerdioxid

    Energy Technology Data Exchange (ETDEWEB)

    Ulbrich, Gregor

    2015-07-23

    In this work it could be shown that Skull-Melting is a suitable method for growing ceria single crystals. Twenty different ceria-based single crystals could be manufactured. It was possible to dope ceria single crystals with Gd, Sm, Y, Zr, Ti, Ta, and Pr in different concentrations. Also co-doping with the named metals was realized. However, there remain some problems for growing ceria-based single crystals by Skull-Melting. As ignition metal zirconium was used because no ceria-based material works well. For that reason all single crystals show small zirconium contamination. Another problem is the formation of oxygen by the heat-induced reduction of ceria during the melting process. Because of that the skull of sintered material is often destroyed by gas pressure. This problem had to be solved individually for every single crystal. The obtained single crystals were characterized using different methods. To ensure the single crystal character the y were examined by Laue diffraction. All manufactured crystals are single crystals. Also powder diffraction patterns of the milled and oxidized samples were measured. For the determination of symmetry and metric the structural parameters were analyzed by the Rietveld method. All synthesized materials crystallize in space group Fm-3m known from calcium fluoride. The cubic lattice parameter a was determined for all crystals. In the case of series with different cerium and zirconium concentrations a linear correlation between cerium content and cubic lattice parameter was detected. The elemental composition was determined by WDX. All crystals show a homogeneous elemental distribution. The oxygen content was calculated because the WDX method isn't useful for determination.

  14. Stanford, Duke, Rice,... and Gates?

    Science.gov (United States)

    Carey, Kevin

    2009-01-01

    This article presents an open letter to Bill Gates. In his letter, the author suggests that Bill Gates should build a brand-new university, a great 21st-century institution of higher learning. This university will be unlike anything the world has ever seen. He asks Bill Gates not to stop helping existing colleges create the higher-education system…

  15. High-Purity Semiconducting Single-Walled Carbon Nanotubes: A Key Enabling Material in Emerging Electronics.

    Science.gov (United States)

    Lefebvre, Jacques; Ding, Jianfu; Li, Zhao; Finnie, Paul; Lopinski, Gregory; Malenfant, Patrick R L

    2017-10-17

    Semiconducting single-walled carbon nanotubes (sc-SWCNTs) are emerging as a promising material for high-performance, high-density devices as well as low-cost, large-area macroelectronics produced via additive manufacturing methods such as roll-to-roll printing. Proof-of-concept demonstrations have indicated the potential of sc-SWCNTs for digital electronics, radiofrequency circuits, radiation hard memory, improved sensors, and flexible, stretchable, conformable electronics. Advances toward commercial applications bring numerous opportunities in SWCNT materials development and characterization as well as fabrication processes and printing technologies. Commercialization in electronics will require large quantities of sc-SWCNTs, and the challenge for materials science is the development of scalable synthesis, purification, and enrichment methods. While a few synthesis routes have shown promising results in making near-monochiral SWCNTs, gram quantities are available only for small-diameter sc-SWCNTs, which underperform in transistors. Most synthesis routes yield mixtures of SWCNTs, typically 30% metallic and 70% semiconducting, necessitating the extraction of sc-SWCNTs from their metallic counterparts in high purity using scalable postsynthetic methods. Numerous routes to obtain high-purity sc-SWCNTs from raw soot have been developed, including density-gradient ultracentrifugation, chromatography, aqueous two-phase extraction, and selective DNA or polymer wrapping. By these methods (termed sorting or enrichment), >99% sc-SWCNT content can be achieved. Currently, all of these approaches have drawbacks and limitations with respect to electronics applications, such as excessive dilution, expensive consumables, and high ionic impurity content. Excess amount of dispersant is a common challenge that hinders direct inclusion of sc-SWCNTs into electronic devices. At present, conjugated polymer extraction may represent the most practical route to sc-SWCNTs. By the use of

  16. Analyses of significant features of L-Prolinium Picrate single crystal: An excellent material for non linear optical applications

    Energy Technology Data Exchange (ETDEWEB)

    Thukral, Kanika [Academy of Scientific and Innovative Research, CSIR- National Physical Laboratory, New Delhi, 110012 (India); CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi, 110 012 (India); Vijayan, N., E-mail: nvijayan@nplindia.org [CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi, 110 012 (India); Vij, Mahak [CSIR-National Physical Laboratory, Dr. K.S. Krishnan Road, New Delhi, 110 012 (India); Nagaraja, C.M. [Department of Chemistry, Indian Institute of Technology Ropar, Rupnagar, 140001, Punjab (India); Jayaramakrishnan, V. [Centro De Investigations En Optica, Loma del Bosque 115, Colonia Lomas del Campestre, León, Guanajuato, Código Postal, 37150 (Mexico); Jayalakshmy, M.S. [International and Inter University Centre for Nanoscience and Nanotechnology, Mahatma Gandhi University, Kottayam, Kerala, 686560 (India); Kant, Rajni [Department of Physics and Electronics, University of Jammu, Jammu Tawi, 180006 (India)

    2017-06-15

    Today the fundamental aspect of the researchers is to explore maximum physical properties of the material for device fabrication. In the present article, single crystal X-ray diffraction has been carried out to verify the formation of the synthesized compound. In addition to that, powder X-ray diffraction has been performed to obtain diffraction pattern of L-Prolinium Picrate single crystal. The strain present inside the single crystal was measured using Hall-Williamson equation from PXRD measurements. The dark current and photon current was obtained from photoconductivity technique whose plot depicted that the sample was negative photoconducting material. Optical homogeneity of the single crystal was analyzed using birefringence technique. Its resistance towards Nd: YAG laser was scrutinized for L-Prolinium Picrate single crystal by applying 1 pulse per second. Different thermal parameters like thermal conductivity, thermal diffusivity, thermal effusivity and specific heat were computed using photo-pyroelectric technique. Solid state parameters were calculated from Clausius Mossotti relation by taking structural information of the title compound. Also, optical parameters like refractive index, reflectance etc were calculated through UV–Vis–NIR analysis. - Highlights: • An optically transparent L-Prolinium Picrate single crystal was harvested from slow evaporation solution growth technique. • The compound shows negative photoconducting nature. • Its optical homogeneity was analyzed using birefringence. • Single shot of laser was applied to sample to measure laser damage threshold value. • The thermal parameters were computed from Photopyroelectric technique.

  17. Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane.

    Science.gov (United States)

    Zhu, Li Qiang; Wan, Chang Jin; Gao, Ping Qi; Liu, Yang Hui; Xiao, Hui; Ye, Ji Chun; Wan, Qing

    2016-08-24

    Ion-conducting materials have received considerable attention for their applications in fuel cells, electrochemical devices, and sensors. Here, flexible indium zinc oxide (InZnO) synaptic transistors with multiple presynaptic inputs gated by proton-conducting phosphorosilicate glass-based electrolyte films are fabricated on ultrathin Si membranes. Transient characteristics of the proton gated InZnO synaptic transistors are investigated, indicating stable proton-gating behaviors. Short-term synaptic plasticities are mimicked on the proposed proton-gated synaptic transistors. Furthermore, synaptic integration regulations are mimicked on the proposed synaptic transistor networks. Spiking logic modulations are realized based on the transition between superlinear and sublinear synaptic integration. The multigates coupled flexible proton-gated oxide synaptic transistors may be interesting for neuroinspired platforms with sophisticated spatiotemporal information processing.

  18. A review on solar cells from Si-single crystals to porous materials and quantum dots

    Directory of Open Access Journals (Sweden)

    Waheed A. Badawy

    2015-03-01

    Full Text Available Solar energy conversion to electricity through photovoltaics or to useful fuel through photoelectrochemical cells was still a main task for research groups and developments sectors. In this article we are reviewing the development of the different generations of solar cells. The fabrication of solar cells has passed through a large number of improvement steps considering the technological and economic aspects. The first generation solar cells were based on Si wafers, mainly single crystals. Permanent researches on cost reduction and improved solar cell efficiency have led to the marketing of solar modules having 12–16% solar conversion efficiency. Application of polycrystalline Si and other forms of Si have reduced the cost but on the expense of the solar conversion efficiency. The second generation solar cells were based on thin film technology. Thin films of amorphous Si, CIS (copper–indium–selenide and t-Si were employed. Solar conversion efficiencies of about 12% have been achieved with a remarkable cost reduction. The third generation solar cells are based on nano-crystals and nano-porous materials. An advanced photovoltaic cell, originally developed for satellites with solar conversion efficiency of 37.3%, based on concentration of the solar spectrum up to 400 suns was developed. It is based on extremely thin concentration cells. New sensitizer or semiconductor systems are necessary to broaden the photo-response in solar spectrum. Hybrids of solar and conventional devices may provide an interim benefit in seeking economically valuable devices. New quantum dot solar cells based on CdSe–TiO2 architecture have been developed.

  19. A review on solar cells from Si-single crystals to porous materials and quantum dots.

    Science.gov (United States)

    Badawy, Waheed A

    2015-03-01

    Solar energy conversion to electricity through photovoltaics or to useful fuel through photoelectrochemical cells was still a main task for research groups and developments sectors. In this article we are reviewing the development of the different generations of solar cells. The fabrication of solar cells has passed through a large number of improvement steps considering the technological and economic aspects. The first generation solar cells were based on Si wafers, mainly single crystals. Permanent researches on cost reduction and improved solar cell efficiency have led to the marketing of solar modules having 12-16% solar conversion efficiency. Application of polycrystalline Si and other forms of Si have reduced the cost but on the expense of the solar conversion efficiency. The second generation solar cells were based on thin film technology. Thin films of amorphous Si, CIS (copper-indium-selenide) and t-Si were employed. Solar conversion efficiencies of about 12% have been achieved with a remarkable cost reduction. The third generation solar cells are based on nano-crystals and nano-porous materials. An advanced photovoltaic cell, originally developed for satellites with solar conversion efficiency of 37.3%, based on concentration of the solar spectrum up to 400 suns was developed. It is based on extremely thin concentration cells. New sensitizer or semiconductor systems are necessary to broaden the photo-response in solar spectrum. Hybrids of solar and conventional devices may provide an interim benefit in seeking economically valuable devices. New quantum dot solar cells based on CdSe-TiO2 architecture have been developed.

  20. Proton Conducting Graphene Oxide/Chitosan Composite Electrolytes as Gate Dielectrics for New-Concept Devices.

    Science.gov (United States)

    Feng, Ping; Du, Peifu; Wan, Changjin; Shi, Yi; Wan, Qing

    2016-09-30

    New-concept devices featuring the characteristics of ultralow operation voltages and low fabrication cost have received increasing attention recently because they can supplement traditional Si-based electronics. Also, organic/inorganic composite systems can offer an attractive strategy to combine the merits of organic and inorganic materials into promising electronic devices. In this report, solution-processed graphene oxide/chitosan composite film was found to be an excellent proton conducting electrolyte with a high specific capacitance of ~3.2 μF/cm 2 at 1.0 Hz, and it was used to fabricate multi-gate electric double layer transistors. Dual-gate AND logic operation and two-terminal diode operation were realized in a single device. A two-terminal synaptic device was proposed, and some important synaptic behaviors were emulated, which is interesting for neuromorphic systems.

  1. Respiratory gated beam delivery cannot facilitate margin reduction, unless combined with respiratory correlated image guidance

    DEFF Research Database (Denmark)

    Korreman, S.S.; Boyer, A.L.; Juhler-Nøttrup, Trine

    2008-01-01

    PURPOSE/OBJECTIVE: In radiotherapy of targets moving with respiration, beam gating is offered as a means of reducing the target motion. The purpose of this study is to evaluate the safe magnitude of margin reduction for respiratory gated beam delivery. MATERIALS/METHODS: The study is based on data...... for 17 lung cancer patients in separate protocols at Rigshospitalet and Stanford Cancer Center. Respiratory curves for external optical markers and implanted fiducials were collected using equipment based on the RPM system (Varian Medical Systems). A total of 861 respiratory curves represented external...... measurements over 30 fraction treatment courses for 10 patients, and synchronous external/internal measurements in single sessions for seven patients. Variations in respiratory amplitude (simulated coaching) and external/internal phase shifts were simulated by perturbation with realistic values. Variations...

  2. Low Gate Voltage Operated Multi-emitter-dot H+ Ion-Sensitive Gated Lateral Bipolar Junction Transistor

    Science.gov (United States)

    Yuan, Heng; Zhang, Ji-Xing; Zhang, Chen; Zhang, Ning; Xu, Li-Xia; Ding, Ming; Patrick, J. Clarke

    2015-02-01

    A low gate voltage operated multi-emitter-dot gated lateral bipolar junction transistor (BJT) ion sensor is proposed. The proposed device is composed of an arrayed gated lateral BJT, which is driven in the metal-oxide-semiconductor field-effect transistor (MOSFET)-BJT hybrid operation mode. Further, it has multiple emitter dots linked to each other in parallel to improve ionic sensitivity. Using hydrogen ionic solutions as reference solutions, we conduct experiments in which we compare the sensitivity and threshold voltage of the multi-emitter-dot gated lateral BJT with that of the single-emitter-dot gated lateral BJT. The multi-emitter-dot gated lateral BJT not only shows increased sensitivity but, more importantly, the proposed device can be operated under very low gate voltage, whereas the conventional ion-sensitive field-effect transistors cannot. This special characteristic is significant for low power devices and for function devices in which the provision of a gate voltage is difficult.

  3. An Assessment of New Applications for Single-Crystal Piezoelectric Materials

    National Research Council Canada - National Science Library

    Veitch, Lisa

    1998-01-01

    Piezoelectricity was first discovered by the Curie brothers in 1880. During the 1940s, piezoelectric ceramic materials were first used in commercial devices, and new materials and other applications have continued to develop over the years...

  4. Multifunctional logic gates based on silicon hybrid plasmonic waveguides

    Science.gov (United States)

    Cui, Luna; Yu, Li

    2018-01-01

    Nano-scale Multifunctional Logic Gates based on Si hybrid plasmonic waveguides (HPWGs) are designed by utilizing the multimode interference (MMI) effect. The proposed device is composed of three input waveguides, three output waveguides and an MMI waveguide. The functional size of the device is only 1000 nm × 3200 nm, which is much smaller than traditional Si-based all-optical logic gates. By setting different input signals and selecting suitable threshold value, OR, AND, XOR and NOT gates are achieved simultaneously or individually in a single device. This may provide a way for ultrahigh speed signal processing and future nanophotonic integrated circuits.

  5. Precision Photothermal Annealing of Nanoporous Gold Thin Films for the Microfabrication of a Single-chip Material Libraries

    Energy Technology Data Exchange (ETDEWEB)

    Harris, C. D. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Shen, N. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Rubenchik, A. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Demos, S. G. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States); Matthews, M. J. [Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

    2015-06-30

    Single-chip material libraries of thin films of nanostructured materials are a promising approach for high throughput studies of structure-property relationship in the fields of physics and biology. Nanoporous gold (np-Au), produced by an alloy corrosion process, is a nanostructured material of specific interest in both these fields. One attractive property of np-Au is its self-similar coarsening behavior by thermally induced surface diffusion. However, traditional heat application techniques for the modification of np-Au are bulk processes that cannot be used to generate a library of different pore sizes on a single chip. Laser micromachining offers an attractive solution to this problem by providing a means to apply energy with high spatial and temporal resolution. In the present study we use finite element multiphysics simulations to predict the effects of laser mode (continuous-wave vs. pulsed) and supporting substrate thermal conductivity on the local np-Au film temperatures during photothermal annealing and subsequently investigate the mechanisms by which the np-Au network is coarsening. Our simulations predict that continuous-wave mode laser irradiation on a silicon supporting substrate supports the widest range of morphologies that can be created through the photothermal annealing of thin film np-Au. Using this result we successfully fabricate a single-chip material library consisting of 81 np-Au samples of 9 different morphologies for use in increased throughput material interaction studies.

  6. Relationship between Pore Occupancy and Gating in BK Potassium Channels

    OpenAIRE

    Piskorowski, Rebecca A.; Aldrich, Richard W.

    2006-01-01

    Permeant ions can have significant effects on ion channel conformational changes. To further understand the relationship between ion occupancy and gating conformational changes, we have studied macroscopic and single-channel gating of BK potassium channels with different permeant monovalent cations. While the slopes of the conductance?voltage curve were reduced with respect to potassium for all permeant ions, BK channels required stronger depolarization to open only when thallium was the perm...

  7. Selvester QRS score and total perfusion deficit calculated by quantitative gated single-photon emission computed tomography in patients with prior anterior myocardial infarction in the coronary intervention era.

    Science.gov (United States)

    Kurisu, Satoshi; Shimonaga, Takashi; Ikenaga, Hiroki; Watanabe, Noriaki; Higaki, Tadanao; Ishibashi, Ken; Dohi, Yoshihiro; Fukuda, Yukihiro; Kihara, Yasuki

    2017-04-01

    Selvester QRS scoring system has an advantage of being inexpensive and easily accessible for estimating myocardial infarct (MI) size. We assessed the correlation and agreement between QRS score and total perfusion deficit (TPD) calculated by quantitative gated single-photon emission computed tomography (QGS) in patients with prior anterior MI undergoing coronary intervention. Sixty-six patients with prior anterior MI and 66 age- and sex-matched control subjects were enrolled. QRS score was obtained using a 50-criteria and 31-point system. QRS score was significantly higher in patients with prior anterior MI than control subjects (12.8 ± 8.9 vs 1.1 ± 2.7 %, p < 0.001). In overall patients (n = 132), QRS score was correlated well with TPD (r = 0.81, p < 0.001). This good correlation was found even in patients with TPD ≤40 % (n = 126) or in patients with TPD ≤30 % (n = 117). In overall patients, MI size estimated by QRS score was 7.0 ± 8.8 %, which was significantly smaller than TPD, 11.4 ± 14.0 % (p < 0.001). Bland-Altman plot showed that there was an increasing difference between QRS score and TPD with increasing MI size. When Blant-Altman plots were applied to patients with TPD ≤40 % and further in patients with TPD ≤30 %, the difference between QRS score and TPD became smaller, and the agreement became better. In overall patients, QRS score was correlated well with QGS measurements, such as end-diastolic volume (r = 0.62, p < 0.001), end-systolic volume (r = 0.67, p < 0.001), or ejection fraction (r = -0.73, p < 0.001). Our results suggest that QRS score reflects TPD well in patients with prior anterior MI, whose TPD is less than approximately 30 % even in the coronary intervention era.

  8. Noise Gating Solar Images

    Science.gov (United States)

    DeForest, Craig; Seaton, Daniel B.; Darnell, John A.

    2017-08-01

    I present and demonstrate a new, general purpose post-processing technique, "3D noise gating", that can reduce image noise by an order of magnitude or more without effective loss of spatial or temporal resolution in typical solar applications.Nearly all scientific images are, ultimately, limited by noise. Noise can be direct Poisson "shot noise" from photon counting effects, or introduced by other means such as detector read noise. Noise is typically represented as a random variable (perhaps with location- or image-dependent characteristics) that is sampled once per pixel or once per resolution element of an image sequence. Noise limits many aspects of image analysis, including photometry, spatiotemporal resolution, feature identification, morphology extraction, and background modeling and separation.Identifying and separating noise from image signal is difficult. The common practice of blurring in space and/or time works because most image "signal" is concentrated in the low Fourier components of an image, while noise is evenly distributed. Blurring in space and/or time attenuates the high spatial and temporal frequencies, reducing noise at the expense of also attenuating image detail. Noise-gating exploits the same property -- "coherence" -- that we use to identify features in images, to separate image features from noise.Processing image sequences through 3-D noise gating results in spectacular (more than 10x) improvements in signal-to-noise ratio, while not blurring bright, resolved features in either space or time. This improves most types of image analysis, including feature identification, time sequence extraction, absolute and relative photometry (including differential emission measure analysis), feature tracking, computer vision, correlation tracking, background modeling, cross-scale analysis, visual display/presentation, and image compression.I will introduce noise gating, describe the method, and show examples from several instruments (including SDO

  9. A quantum Fredkin gate.

    Science.gov (United States)

    Patel, Raj B; Ho, Joseph; Ferreyrol, Franck; Ralph, Timothy C; Pryde, Geoff J

    2016-03-01

    Minimizing the resources required to build logic gates into useful processing circuits is key to realizing quantum computers. Although the salient features of a quantum computer have been shown in proof-of-principle experiments, difficulties in scaling quantum systems have made more complex operations intractable. This is exemplified in the classical Fredkin (controlled-SWAP) gate for which, despite theoretical proposals, no quantum analog has been realized. By adding control to the SWAP unitary, we use photonic qubit logic to demonstrate the first quantum Fredkin gate, which promises many applications in quantum information and measurement. We implement example algorithms and generate the highest-fidelity three-photon Greenberger-Horne-Zeilinger states to date. The technique we use allows one to add a control operation to a black-box unitary, something that is impossible in the standard circuit model. Our experiment represents the first use of this technique to control a two-qubit operation and paves the way for larger controlled circuits to be realized efficiently.

  10. π and π + σ plasmon localization in single-walled carbon nanotube meta-materials.

    Science.gov (United States)

    Kramberger, C; Thurakitseree, T; Maruyama, S; Knupfer, M

    2013-10-11

    We have investigated the plasmon excitations and interband transitions in nematic nanotube meta-materials with different nanotube mean diameters. While the characteristic optical low-energy transitions give testimony to the differing mean diameters, the full momentum resolved π as well as π + σ plasmon response of the meta-materials is found to be entirely invariant with the nanotube diameters 1 nm meta-material offers a knob to uniformly tune the plasmon resonances.

  11. Feasibility study of multi-pass respiratory-gated helical tomotherapy of a moving target via binary MLC closure.

    Science.gov (United States)

    Kim, Bryan; Chen, Jeff; Kron, Tomas; Battista, Jerry

    2010-11-21

    Gated radiotherapy of lung lesions is particularly complex for helical tomotherapy, due to the simultaneous motions of its three subsystems (gantry, couch and collimator). We propose a new way to implement gating for helical tomotherapy, namely multi-pass respiratory gating. In this method, gating is achieved by delivering only the beam projections that occur within a respiratory gating window, while blocking the rest of the beam projections by fully closing all collimator leaves. Due to the continuous couch motion, the planned beam projections must be delivered over multiple passes of radiation deliveries. After each pass, the patient couch is reset to its starting position, and the treatment recommences at a different phase of tumour motion to 'fill in' the previously blocked beam projections. The gating process may be repeated until the plan dose is delivered (full gating), or halted after a certain number of passes, with the entire remaining dose delivered in a final pass without gating (partial gating). The feasibility of the full gating approach was first tested for sinusoidal target motion, through experimental measurements with film and computer simulation. The optimal gating parameters for full and partial gating methods were then determined for various fractionation schemes through computer simulation, using a patient respiratory waveform. For sinusoidal motion, the PTV dose deviations of -29 to 5% observed without gating were reduced to range from -1 to 3% for a single fraction, with a 4 pass full gating. For a patient waveform, partial gating required fewer passes than full gating for all fractionation schemes. For a single fraction, the maximum allowed residual motion was only 4 mm, requiring large numbers of passes for both full (12) and partial (7 + 1) gating methods. The number of required passes decreased significantly for 3 and 30 fractions, allowing residual motion up to 7 mm. Overall, the multi-pass gating technique was shown to be a promising

  12. Feasibility study of multi-pass respiratory-gated helical tomotherapy of a moving target via binary MLC closure

    Science.gov (United States)

    Kim, Bryan; Chen, Jeff; Kron, Tomas; Battista, Jerry

    2010-11-01

    Gated radiotherapy of lung lesions is particularly complex for helical tomotherapy, due to the simultaneous motions of its three subsystems (gantry, couch and collimator). We propose a new way to implement gating for helical tomotherapy, namely multi-pass respiratory gating. In this method, gating is achieved by delivering only the beam projections that occur within a respiratory gating window, while blocking the rest of the beam projections by fully closing all collimator leaves. Due to the continuous couch motion, the planned beam projections must be delivered over multiple passes of radiation deliveries. After each pass, the patient couch is reset to its starting position, and the treatment recommences at a different phase of tumour motion to 'fill in' the previously blocked beam projections. The gating process may be repeated until the plan dose is delivered (full gating), or halted after a certain number of passes, with the entire remaining dose delivered in a final pass without gating (partial gating). The feasibility of the full gating approach was first tested for sinusoidal target motion, through experimental measurements with film and computer simulation. The optimal gating parameters for full and partial gating methods were then determined for various fractionation schemes through computer simulation, using a patient respiratory waveform. For sinusoidal motion, the PTV dose deviations of -29 to 5% observed without gating were reduced to range from -1 to 3% for a single fraction, with a 4 pass full gating. For a patient waveform, partial gating required fewer passes than full gating for all fractionation schemes. For a single fraction, the maximum allowed residual motion was only 4 mm, requiring large numbers of passes for both full (12) and partial (7 + 1) gating methods. The number of required passes decreased significantly for 3 and 30 fractions, allowing residual motion up to 7 mm. Overall, the multi-pass gating technique was shown to be a promising

  13. 100-nm gate lithography for double-gate transistors

    Science.gov (United States)

    Krasnoperova, Azalia A.; Zhang, Ying; Babich, Inna V.; Treichler, John; Yoon, Jung H.; Guarini, Kathryn; Solomon, Paul M.

    2001-09-01

    The double gate field effect transistor (FET) is an exploratory device that promises certain performance advantages compared to traditional CMOS FETs. It can be scaled down further than the traditional devices because of the greater electrostatic control by the gates on the channel (about twice as short a channel length for the same gate oxide thickness), has steeper sub-threshold slope and about double the current for the same width. This paper presents lithographic results for double gate FET's developed at IBM's T. J. Watson Research Center. The device is built on bonded wafers with top and bottom gates self-aligned to each other. The channel is sandwiched between the top and bottom polysilicon gates and the gate length is defined using DUV lithography. An alternating phase shift mask was used to pattern gates with critical dimensions of 75 nm, 100 nm and 125 nm in photoresist. 50 nm gates in photoresist have also been patterned by 20% over-exposure of nominal 100 nm lines. No trim mask was needed because of a specific way the device was laid out. UV110 photoresist from Shipley on AR-3 antireflective layer were used. Process windows, developed and etched patterns are presented.

  14. Isolated elliptically polarized attosecond soft X-ray with high-brilliance using polarization gating of harmonics from relativistic plasmas at oblique incidence.

    Science.gov (United States)

    Chen, Zi-Yu; Li, Xiao-Ya; Li, Bo-Yuan; Chen, Min; Liu, Feng

    2018-02-19

    The production of intense isolated attosecond pulse is a major goal in ultrafast research. Recent advances in high harmonic generation from relativistic plasma mirrors under oblique incidence interactions gave rise to photon-rich attosecond pulses with circular or elliptical polarization. However, to achieve an isolated elliptical attosecond pulse via polarization gating using currently available long driving pulses remains a challenge, because polarization gating of high harmonics from relativistic plasmas is assumed only possible at normal or near-normal incidence. Here we numerically demonstrate a scheme around this problem. We show that via control of plasma dynamics by managing laser polarization, it is possible to gate an intense single attosecond pulse with high ellipticity extending to the soft X-ray regime at oblique incidence. This approach thus paves the way towards a powerful tool enabling high-time-resolution probe of dynamics of chiral systems and magnetic materials with current laser technology.

  15. Development of Gating Foils To Inhibit Ion Feedback Using FPC Production Techniques

    Science.gov (United States)

    Arai, D.; Ikematsu, K.; Sugiyama, A.; Iwamura, M.; Koto, A.; Katsuki, K.; Fujii, K.; Matsuda, T.

    2018-02-01

    Positive ion feedback from a gas amplification device to the drift region of the Time Projection Chamber for the ILC can deteriorate the position resolution. In order to inhibit the feedback ions, MPGD-based gating foils having good electron transmission have been developed to be used instead of the conventional wire gate. The gating foil needs to control the electric field locally in opening or closing the gate. The gating foil with a GEM (gas electron multiplier)-like structure has larger holes and smaller thickness than standard GEMs for gas amplification. It is known that the foil transmits over 80 % of electrons and blocks ions almost completely. We have developed the gating foils using flexible printed circuit (FPC) production techniques including an improved single-mask process. In this paper, we report on the production technique of 335 μm pitch, 12.5 μm thick gating foil with 80 % transmittance of electrons in ILC conditions.

  16. Bounding quantum gate error rate based on reported average fidelity

    International Nuclear Information System (INIS)

    Sanders, Yuval R; Wallman, Joel J; Sanders, Barry C

    2016-01-01

    Remarkable experimental advances in quantum computing are exemplified by recent announcements of impressive average gate fidelities exceeding 99.9% for single-qubit gates and 99% for two-qubit gates. Although these high numbers engender optimism that fault-tolerant quantum computing is within reach, the connection of average gate fidelity with fault-tolerance requirements is not direct. Here we use reported average gate fidelity to determine an upper bound on the quantum-gate error rate, which is the appropriate metric for assessing progress towards fault-tolerant quantum computation, and we demonstrate that this bound is asymptotically tight for general noise. Although this bound is unlikely to be saturated by experimental noise, we demonstrate using explicit examples that the bound indicates a realistic deviation between the true error rate and the reported average fidelity. We introduce the Pauli distance as a measure of this deviation, and we show that knowledge of the Pauli distance enables tighter estimates of the error rate of quantum gates. (fast track communication)

  17. Expert Oracle GoldenGate

    CERN Document Server

    Prusinski, Ben; Chung, Richard

    2011-01-01

    Expert Oracle GoldenGate is a hands-on guide to creating and managing complex data replication environments using the latest in database replication technology from Oracle. GoldenGate is the future in replication technology from Oracle, and aims to be best-of-breed. GoldenGate supports homogeneous replication between Oracle databases. It supports heterogeneous replication involving other brands such as Microsoft SQL Server and IBM DB2 Universal Server. GoldenGate is high-speed, bidirectional, highly-parallelized, and makes only a light impact on the performance of databases involved in replica

  18. Molecular logic gate arrays.

    Science.gov (United States)

    de Silva, A Prasanna

    2011-03-01

    Chemists are now able to emulate the ideas and instruments of mathematics and computer science with molecules. The integration of molecular logic gates into small arrays has been a growth area during the last few years. The design principles underlying a collection of these cases are examined. Some of these computing molecules are applicable in medical- and biotechnologies. Cases of blood diagnostics, 'lab-on-a-molecule' systems, and molecular computational identification of small objects are included. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Method for single crystal growth of photovoltaic perovskite material and devices

    Energy Technology Data Exchange (ETDEWEB)

    Huang, Jinsong; Dong, Qingfeng

    2017-11-07

    Systems and methods for perovskite single crystal growth include using a low temperature solution process that employs a temperature gradient in a perovskite solution in a container, also including at least one small perovskite single crystal, and a substrate in the solution upon which substrate a perovskite crystal nucleates and grows, in part due to the temperature gradient in the solution and in part due to a temperature gradient in the substrate. For example, a top portion of the substrate external to the solution may be cooled.

  20. Development of a reference material of a single DNA molecule for the quality control of PCR testing.

    Science.gov (United States)

    Mano, Junichi; Hatano, Shuko; Futo, Satoshi; Yoshii, Junji; Nakae, Hiroki; Naito, Shigehiro; Takabatake, Reona; Kitta, Kazumi

    2014-09-02

    We developed a reference material of a single DNA molecule with a specific nucleotide sequence. The double-strand linear DNA which has PCR target sequences at the both ends was prepared as a reference DNA molecule, and we named the PCR targets on each side as confirmation sequence and standard sequence. The highly diluted solution of the reference molecule was dispensed into 96 wells of a plastic PCR plate to make the average number of molecules in a well below one. Subsequently, the presence or absence of the reference molecule in each well was checked by real-time PCR targeting for the confirmation sequence. After an enzymatic treatment of the reaction mixture in the positive wells for the digestion of PCR products, the resultant solution was used as the reference material of a single DNA molecule with the standard sequence. PCR analyses revealed that the prepared samples included only one reference molecule with high probability. The single-molecule reference material developed in this study will be useful for the absolute evaluation of a detection limit of PCR-based testing methods, the quality control of PCR analyses, performance evaluations of PCR reagents and instruments, and the preparation of an accurate calibration curve for real-time PCR quantitation.

  1. Monte Carlo calculations of the neutron coincidence gate utilisation factor for passive neutron coincidence counting

    International Nuclear Information System (INIS)

    Bourva, L.C.A.; Croft, S.

    1999-01-01

    The general purpose neutron-photon-electron Monte Carlo N-Particle code, MCNP TM , has been used to simulate the neutronic characteristics of the on-site laboratory passive neutron coincidence counter to be installed, under Euratom Safeguards Directorate supervision, at the Sellafield reprocessing plant in Cumbria, UK. This detector is part of a series of nondestructive assay instruments to be installed for the accurate determination of the plutonium content of nuclear materials. The present work focuses on one aspect of this task, namely, the accurate calculation of the coincidence gate utilisation factor. This parameter is an important term in the interpretative model used to analyse the passive neutron coincidence count data acquired using pulse train deconvolution electronics based on the shift register technique. It accounts for the limited proportion of neutrons detected within the time interval for which the electronics gate is open. The Monte Carlo code MCF, presented in this work, represents a new evaluation technique for the estimation of gate utilisation factors. It uses the die-away profile of a neutron coincidence chamber generated either by MCNP TM , or by other means, to simulate the neutron detection arrival time pattern originating from independent spontaneous fission events. A shift register simulation algorithm, embedded in the MCF code, then calculates the coincidence counts scored within the electronics gate. The gate utilisation factor is then deduced by dividing the coincidence counts obtained with that obtained in the same Monte Carlo run, but for an ideal detection system with a coincidence gate utilisation factor equal to unity. The MCF code has been benchmarked against analytical results calculated for both single and double exponential die-away profiles. These results are presented along with the development of the closed form algebraic expressions for the two cases. Results of this validity check showed very good agreement. On this

  2. Quantum-state preparation with universal gate decompositions

    Science.gov (United States)

    Plesch, Martin; Brukner, Časlav

    2011-03-01

    In quantum computation every unitary operation can be decomposed into quantum circuits—a series of single-qubit rotations and a single type entangling two-qubit gates, such as controlled-not (cnot) gates. Two measures are important when judging the complexity of the circuit: the total number of cnot gates needed to implement it and the depth of the circuit, measured by the minimal number of computation steps needed to perform it. Here we give an explicit and simple quantum circuit scheme for preparation of arbitrary quantum states, which can directly utilize any decomposition scheme for arbitrary full quantum gates, thus connecting the two problems. Our circuit reduces the depth of the best currently known circuit by a factor of 2. It also reduces the total number of cnot gates from 2n to (23)/(24)2n in the leading order for even number of qubits. Specifically, the scheme allows us to decrease the upper bound from 11 cnot gates to 9 and the depth from 11 to 5 steps for four qubits. Our results are expected to help in designing and building small-scale quantum circuits using present technologies.

  3. A Single-Molecule Propyne Trap: Highly Efficient Removal of Propyne from Propylene with Anion-Pillared Ultramicroporous Materials.

    Science.gov (United States)

    Yang, Lifeng; Cui, Xili; Yang, Qiwei; Qian, Siheng; Wu, Hui; Bao, Zongbi; Zhang, Zhiguo; Ren, Qilong; Zhou, Wei; Chen, Banglin; Xing, Huabin

    2018-03-01

    Propyne/propylene (C 3 H 4 /C 3 H 6 ) separation is a critical process for the production of polymer-grade C 3 H 6 . However, optimization of the structure of porous materials for the highly efficient removal of C 3 H 4 from C 3 H 6 remains challenging due to their similar structures and ultralow C 3 H 4 concentration. Here, it is first reported that hybrid ultramicroporous materials with pillared inorganic anions (SiF 6 2- = SIFSIX, NbOF 5 2- = NbOFFIVE) can serve as highly selective C 3 H 4 traps for the removal of trace C 3 H 4 from C 3 H 6 . Especially, it is revealed that the pyrazine-based ultramicroporous material with square grid structure for which the pore shape and functional site disposition can be varied in 0.1-0.5 Å scale to match both the shape and interacting sites of guest molecule is an interesting single-molecule trap for C 3 H 4 molecule. The pyrazine-based single-molecule trap enables extremely high C 3 H 4 uptake under ultralow concentration (2.65 mmol g -1 at 3000 ppm, one C 3 H 4 per unit cell) and record selectivity over C 3 H 6 at 298 K (>250). The single-molecule binding mode for C 3 H 4 within ultramicroporous material is validated by X-ray diffraction experiments and modeling studies. The breakthrough experiments confirm that anion-pillared ultramicroporous materials set new benchmarks for the removal of ultralow concentration C 3 H 4 (1000 ppm on SIFSIX-3-Ni, and 10 000 ppm on SIFSIX-2-Cu-i) from C 3 H 6 . © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  4. Gate-set tomography on two coupled transmons

    Science.gov (United States)

    Silva, Marcus; Riste, Diego; Ryan, Colm; Nielsen, Erik; Rudinger, Kenneth; Blume-Kohout, Robin

    Gate set tomography (GST) is a high-accuracy method of reconstructing the evolution of a quantum register. We describe the implementation of GST on two coupled transmon qubits. The ideal gate set includes single-qubit gates and an entangling gate locally equivalent to a CNOT. The analysis shows good agreement with predictions from theoretical models of our system - including the effects of coherent errors, which serve to illustrate important differences between average infidelity and diamond norm error rates. Finally, we describe how to mitigate these errors for improved performance. This effort is supported in part by ARO under contract W911NF-14-C-0048. This document does not contain technology or technical data controlled under either the U.S. ITAR or the U.S. EAR.

  5. Recent R&D trends in inorganic single crystal scintillator materials for radiation detection

    Czech Academy of Sciences Publication Activity Database

    Nikl, Martin; Yoshikawa, A.

    2015-01-01

    Roč. 3, č. 4 (2015), s. 463-481 ISSN 2195-1071 R&D Projects: GA MŠk(CZ) LH14266; GA ČR GAP204/12/0805 Institutional support: RVO:68378271 Keywords : scintillator * single crystal * luminescence Subject RIV: BM - Solid Matter Physics ; Magnetism Impact factor: 5.359, year: 2015

  6. Alternative perovskite materials as a cathode component for intermediate temperature single-chamber solid oxide fuel cell

    Energy Technology Data Exchange (ETDEWEB)

    Gaudillere, Cyril; Olivier, Louis; Vernoux, Philippe; Farrusseng, David [Universite Lyon 1, CNRS, UMR 5256, IRCELYON, Institut de recherches sur la catalyse et l' environnement de Lyon, 2 avenue Albert Einstein, F-69626 Villeurbanne (France); Zhang, Chunming; Shao, Zongping [State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemistry and Chemical Engineering, Nanjing University of Technology, No 5 Xin Mofan Road, Nanjing 210009 (China)

    2010-08-01

    This paper exploits the suitability of three perovskite materials Ba{sub 0.5}Sr{sub 0.5}Co{sub 0.8}Fe{sub 0.2}O{sub 3-{delta}} (BSCF), GdBaCo{sub 2}O{sub 5+{delta}} (GBC) and Ba{sub 0.5}Sr{sub 0.5}Mn{sub 0.7}Fe{sub 0.3}O{sub 3-{delta}} (BSMF) as SOFC cathodes in the single-chamber configuration operating at the intermediate temperature range. TG analysis showed high thermal stability depending on the crystalline phases of the materials. The catalytic activity of these three materials for hydrocarbon conversion was investigated under a realistic feed, i.e. with hydrocarbon, oxygen, water and carbon dioxide. Electrochemical impedance spectroscopy of the various cathodes tested in symmetric cell configuration revealed a B-site dependence of the electrode catalytic activity for oxygen reduction. High temperature (1000 C) powder reactivity tests over a gadolinium doped-ceria (CGO) and perovskite cathode revealed excellent chemical compatibility of BSMF and CGO. Catalytic tests associated with thermal and structural characterization attest to the suitability of these materials in the single-chamber configuration. (author)

  7. Alternative perovskite materials as a cathode component for intermediate temperature single-chamber solid oxide fuel cell

    Science.gov (United States)

    Gaudillère, Cyril; Olivier, Louis; Vernoux, Philippe; Zhang, Chunming; Shao, Zongping; Farrusseng, David

    This paper exploits the suitability of three perovskite materials Ba 0.5Sr 0.5Co 0.8Fe 0.2O 3- δ (BSCF), GdBaCo 2O 5+ δ (GBC) and Ba 0.5Sr 0.5Mn 0.7Fe 0.3O 3- δ (BSMF) as SOFC cathodes in the single-chamber configuration operating at the intermediate temperature range. TG analysis showed high thermal stability depending on the crystalline phases of the materials. The catalytic activity of these three materials for hydrocarbon conversion was investigated under a realistic feed, i.e. with hydrocarbon, oxygen, water and carbon dioxide. Electrochemical impedance spectroscopy of the various cathodes tested in symmetric cell configuration revealed a B-site dependence of the electrode catalytic activity for oxygen reduction. High temperature (1000 °C) powder reactivity tests over a gadolinium doped-ceria (CGO) and perovskite cathode revealed excellent chemical compatibility of BSMF and CGO. Catalytic tests associated with thermal and structural characterization attest to the suitability of these materials in the single-chamber configuration.

  8. Stress analysis in bone tissue around single implants with different diameters and veneering materials: a 3-D finite element study.

    Science.gov (United States)

    Santiago Junior, Joel Ferreira; Pellizzer, Eduardo Piza; Verri, Fellippo Ramos; de Carvalho, Paulo Sérgio Perri

    2013-12-01

    The aim of this study was to evaluate the stress distribution on bone tissue with a single prosthesis supported by implants of large and conventional diameter and presenting different veneering materials using the 3-D finite element method. Sixteen models were fabricated to reproduce a bone block with implants, using two diameters (3.75×10 mm and 5.00×10 mm), four different veneering materials (composite resin, acrylic resin, porcelain, and NiCr crown), and two loads (axial (200 N) and oblique (100 N)). For data analysis, the maximum principal stress and von Mises criterion were used. For the axial load, the cortical bone in all models did not exhibit significant differences, and the trabecular bone presented higher tensile stress with reduced implant diameter. For the oblique load, the cortical bone presented a significant increase in tensile stress on the same side as the loading for smaller implant diameters. The trabecular bone showed a similar but more discreet trend. There was no difference in bone tissue with different veneering materials. The veneering material did not influence the stress distribution in the supporting tissues of single implant-supported prostheses. The large-diameter implants improved the transference of occlusal loads to bone tissue and decreased stress mainly under oblique loads. Oblique loading was more detrimental to distribution stresses than axial loading. © 2013.

  9. Enhanced transconductance in a double-gate graphene field-effect transistor

    Science.gov (United States)

    Hwang, Byeong-Woon; Yeom, Hye-In; Kim, Daewon; Kim, Choong-Ki; Lee, Dongil; Choi, Yang-Kyu

    2018-03-01

    Multi-gate transistors, such as double-gate, tri-gate and gate-all-around transistors are the most advanced Si transistor structure today. Here, a genuine double-gate transistor with a graphene channel is experimentally demonstrated. The top and bottom gates of the double-gate graphene field-effect transistor (DG GFET) are electrically connected so that the conductivity of the graphene channel can be modulated simultaneously by both the top and bottom gate. A single-gate graphene field-effect transistor (SG GFET) with only the top gate is also fabricated as a control device. For systematical analysis, the transfer characteristics of both GFETs were measured and compared. Whereas the maximum transconductance of the SG GFET was 17.1 μS/μm, that of the DG GFET was 25.7 μS/μm, which is approximately a 50% enhancement. The enhancement of the transconductance was reproduced and comprehensively explained by a physics-based compact model for GFETs. The investigation of the enhanced transfer characteristics of the DG GFET in this work shows the possibility of a multi-gate architecture for high-performance graphene transistor technology.

  10. Optically stimulated luminescence techniques in retrospective dosimetry using single grains of quartz extracted from unheated materials

    DEFF Research Database (Denmark)

    Thomsen, Kristina Jørkov

    This work investigates the possibility of applying optically stimulated luminescence (OSL) in retrospective dose determinations using unheated materials. It focuses on identifying materials suitable for use in assessment of doses absorbed as a consequenceof radiation accidents (i.e. accident...... that the observed variability in the data is consistent with the sum (in quadrature) of a component,which depends on the number of photons detected from each grain, and a fixed component independent of light level. Dose depth profiles through laboratory irradiated concrete bricks have successfully been measured...... of using common household and workplace chemicals, such as table salt, washing powder and water softener, in retrospective dosimetry has been investigated. It is concluded that such materials should be considered as retrospective dosimeters inthe event of a radiation accident....

  11. The Aharonov-Bohm effect in a side-gated graphene ring

    International Nuclear Information System (INIS)

    Huefner, Magdalena; Molitor, Francoise; Jacobsen, Arnhild; Pioda, Alessandro; Stampfer, Christoph; Ensslin, Klaus; Ihn, Thomas

    2010-01-01

    We investigate the magnetoresistance of a side-gated ring structure etched out of single-layer graphene. We observe Aharonov-Bohm oscillations with about 5% visibility. We are able to change the relative phases of the wave functions in the interfering paths and induce phase jumps of π in the Aharonov-Bohm oscillations by changing the voltage applied to the side gate or the back gate. The observed data can be interpreted within existing models for 'dirty metals'.

  12. GaAs-Based Nanowire Devices with Multiple Asymmetric Gates for Electrical Brownian Ratchets

    OpenAIRE

    Tanaka, Takayuki; Nakano, Yuki; Kasai, Seiya

    2013-01-01

    GaAs-based nanowire devices having multiple asymmetric gates for electrical Brownian ratchets were fabricated and characterized. From three-dimensional potential simulation results and current–voltage characteristics, we confirmed the formation of the asymmetric potential in our device design. Direct current was generated at room temperature by repeatedly switching the potential in a multiple-asymmetric-gate device on and off. Such current was not observed in either a single-asymmetric-gate d...

  13. Optimisation and validation of a 3D reconstruction algorithm for single photon emission computed tomography by means of GATE simulation platform; Optimisation et validation d'un algorithme de reconstruction 3D en Tomographie d'Emission Monophotonique a l'aide de la plate forme de simulation GATE

    Energy Technology Data Exchange (ETDEWEB)

    El Bitar, Ziad [Ecole Doctorale des Sciences Fondamentales, Universite Blaise Pascal, U.F.R de Recherches Scientifiques et Techniques, 34, avenue Carnot - BP 185, 63006 Clermont-Ferrand Cedex (France); Laboratoire de Physique Corpusculaire, CNRS/IN2P3, 63177 Aubiere (France)

    2006-12-15

    Although time consuming, Monte-Carlo simulations remain an efficient tool enabling to assess correction methods for degrading physical effects in medical imaging. We have optimized and validated a reconstruction method baptized F3DMC (Fully 3D Monte Carlo) in which the physical effects degrading the image formation process were modelled using Monte-Carlo methods and integrated within the system matrix. We used the Monte-Carlo simulation toolbox GATE. We validated GATE in SPECT by modelling the gamma-camera (Philips AXIS) used in clinical routine. Techniques of threshold, filtering by a principal component analysis and targeted reconstruction (functional regions, hybrid regions) were used in order to improve the precision of the system matrix and to reduce the number of simulated photons as well as the time consumption required. The EGEE Grid infrastructures were used to deploy the GATE simulations in order to reduce their computation time. Results obtained with F3DMC were compared with the reconstruction methods (FBP, ML-EM, MLEMC) for a simulated phantom and with the OSEM-C method for the real phantom. Results have shown that the F3DMC method and its variants improve the restoration of activity ratios and the signal to noise ratio. By the use of the grid EGEE, a significant speed-up factor of about 300 was obtained. These results should be confirmed by performing studies on complex phantoms and patients and open the door to a unified reconstruction method, which could be used in SPECT and also in PET. (author)

  14. Nano-CMOS gate dielectric engineering

    CERN Document Server

    Wong, Hei

    2011-01-01

    According to Moore's Law, not only does the number of transistors in an integrated circuit double every two years, but transistor size also decreases at a predictable rate. At the rate we are going, the downsizing of CMOS transistors will reach the deca-nanometer scale by 2020. Accordingly, the gate dielectric thickness will be shrunk to less than half-nanometer oxide equivalent thickness (EOT) to maintain proper operation of the transistors, leaving high-k materials as the only viable solution for such small-scale EOT. This comprehensive, up-to-date text covering the physics, materials, devic

  15. Single Molecule Nanoelectrochemistry in Electrical Junctions.

    Science.gov (United States)

    Nichols, Richard J; Higgins, Simon J

    2016-11-15

    gating. This has been referred to as to a "single molecule transistor configuration" with the gate voltage being provided by the controllable potential achieved through the electrochemical double layer. It is shown how the electrolyte medium can control such gating, with ionic liquids providing more efficient gate coupling than aqueous electrolytes. Control of the conductance of viologen molecular wires can also be achieved by encapsulating the viologen redox moiety within a molecular cage, thereby controlling its immediate environment. Molecular conductance can also be gated through multiple redox states. This has been shown for the redox moiety pyrrolo-tetrathiafulvalene, which undergoes single molecule electrochemical transistor gating through three redox states in molecular junctions. Charge transport through this junction follows a two-step hopping mechanism, demonstrating the role of the redox center in electron transfer across the molecular bridge. Recent electrolyte gating studies of rigid, conjugated redox-active metal complexes with tailored terpyridine coordinating ligands and anchors are also presented. These aforementioned studies have all been performed with gold electrode contacts. The Account concludes with recent data showing that it is now possible to study single molecule electrochemical gating with nickel electrodes. This opens up new perspectives for studying interfacial charge transfer with a wide variety of other electrode materials including semiconductor electrodes and also points toward future opportunities for coupling molecular spintronics and nanoelectrochemistry.

  16. Single-sided magnetic resonance profiling in biological and materials science.

    Science.gov (United States)

    Danieli, Ernesto; Blümich, Bernhard

    2013-04-01

    Single-sided NMR was inspired by the oil industry that strived to improve the performance of well-logging tools to measure the properties of fluids confined downhole. This unconventional way of implementing NMR, in which stray magnetic and radio frequency fields are used to recover information of arbitrarily large objects placed outside the magnet, motivated the development of handheld NMR sensors. These devices have moved the technique to different scientific disciplines. The current work gives a review of the most relevant magnets and methodologies developed to generate NMR information from spatially localized regions of samples placed in close proximity to the sensors. When carried out systematically, such measurements lead to 'single-sided depth profiles' or one-dimensional images. This paper presents recent and most relevant applications as well as future perspectives of this growing branch of MRI. Copyright © 2012 Elsevier Inc. All rights reserved.

  17. Faradaic current in different mullite materials. Single crystal, ceramic and cermets

    Energy Technology Data Exchange (ETDEWEB)

    Mata-Osoro, Gustavo; Moya, Jose S.; Pecharroman, Carlos [Instituto de Ciencia de Materiales de Madrid (CSIC) (Spain); Morales, Miguel [Universidad de Santiago de Compostela (Spain). LabCaF; Diaz, L. Antonio [Centro de Investigacion en Nanomateriales y Nanotecnologia (CINN-CSIC), Llanera (Spain); Schneider, Hartmut [Koeln Univ. (Germany). Inst. fuer Kristallographie

    2012-04-15

    Faradaic current measurements have been carried out on three different types of mullite: 2: 1 mullite single crystals (E perpendicular to c), 3: 2 ceramics and 11 % mullite/Mo composites. Measurements were carried out on very thin samples (60 {mu}m) at high voltages (500 to 1 000 V). Under these conditions, measurable currents were recorded even at room temperature. Results indicate notable differences between these three samples, which suggest that, although they share the same name and similar crystalline structure, binding energies and defect distributions seem to be very different. Finally, it has been seen that the excellent behaviour against dielectric breakdown of ceramic mullite does not hold for single crystals or mullite based cermets. (orig.)

  18. Thermal neutron detector and gamma-ray spectrometer utilizing a single material

    Science.gov (United States)

    Stowe, Ashley; Burger, Arnold; Lukosi, Eric

    2017-05-02

    A combined thermal neutron detector and gamma-ray spectrometer system, including: a detection medium including a lithium chalcopyrite crystal operable for detecting thermal neutrons in a semiconductor mode and gamma-rays in a scintillator mode; and a photodetector coupled to the detection medium also operable for detecting the gamma rays. Optionally, the detection medium includes a .sup.6LiInSe.sub.2 crystal. Optionally, the detection medium comprises a compound formed by the process of: melting a Group III element; adding a Group I element to the melted Group III element at a rate that allows the Group I and Group III elements to react thereby providing a single phase I-III compound; and adding a Group VI element to the single phase I-III compound and heating; wherein the Group I element includes lithium.

  19. Gate Control Coefficient Effect on CNFET Characteristic

    International Nuclear Information System (INIS)

    Sanudin, Rahmat; Ma'Radzi, Ahmad Alabqari; Nayan, Nafarizal

    2009-01-01

    The development of carbon nanotube field-effect transistor (CNFET) as alternative to existing transistor technology has long been published and discussed. The emergence of this device offers new material and structure in building a transistor. This paper intends to do an analysis of gate control coefficient effect on CNFET performance. The analysis is based on simulation study of current-voltage (I-V) characteristic of ballistic CNFET. The simulation study used the MOSFET-like CNFET mathematical model to establish the device output characteristic. Based on the analysis of simulation result, it is found that the gate control coefficient contributes to a significant effect on the performance of CNFET. The result also shown the parameter could help to improve the device performance in terms of its output and response as well. Nevertheless, the characteristic of the carbon nanotube that acts as the channel is totally important in determining the performance of the transistor as a whole.

  20. Cascadable spatial-soliton logic gates.

    Science.gov (United States)

    Blair, S; Wagner, K

    2000-11-10

    The three-terminal spatial-soliton angular-deflection geometry provides the characteristics of an inverting logic gate with gain, and phase-insensitive implementations can be realized by a number of specific nonlinear interactions between orthogonally polarized waves. In particular, numerical simulations of spatial-soliton dragging and collision are used to calculate the transfer functions of inverter and multiple configurations of two-input nor gates and to address their cascadability. These transfer functions converge in cascaded operation and suggest that fan-out greater than 2 with a large noise margin is attainable in a system with standardized signal levels. These results are obtained with the material properties of fused silica and are representative of low-loss Kerr media.

  1. On Field-Effect Photovoltaics: Gate Enhancement of the Power Conversion Efficiency in a Nanotube/Silicon-Nanowire Solar Cell.

    Science.gov (United States)

    Petterson, Maureen K; Lemaitre, Maxime G; Shen, Yu; Wadhwa, Pooja; Hou, Jie; Vasilyeva, Svetlana V; Kravchenko, Ivan I; Rinzler, Andrew G

    2015-09-30

    Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use of low density of electronic states (DOS) nanocarbons (nanotubes, graphene) as the metal contacting the Si. Recently, unprecedented modulation of the power conversion efficiency in a single material system has been demonstrated in such cells by the use of electronic gating. The gate field induced Fermi level shift in the low-DOS carbon serves to enhance the junction built-in potential, while a gate field induced inversion layer at the Si surface, in regions remote from the junction, keeps the photocarriers well separated there, avoiding recombination at surface traps and defects (a key loss mechanism). Here, we extend these results into the third dimension of a vertical Si nanowire array solar cell. A single wall carbon nanotube layer engineered to contact virtually each n-Si nanowire tip extracts the minority carriers, while an ionic liquid electrolytic gate drives the nanowire body into inversion. The enhanced light absorption of the vertical forest cell, at 100 mW/cm(2) AM1.5G illumination, results in a short-circuit current density of 35 mA/cm(2) and associated power conversion efficiency of 15%. These results highlight the use of local fields as opposed to surface passivation as a means of avoiding front surface recombination. A deleterious electrochemical reaction of the silicon due to the electrolyte gating is shown to be caused by oxygen/water entrained in the ionic liquid electrolyte. While encapsulation can avoid the issue, a nonencapsulation-based approach is also implemented.

  2. A useful single-solution polychrome stain for plant material...Brook Cyte-Chrome I.

    Science.gov (United States)

    Stanley L Krugman; Julia F. Littlefield

    1968-01-01

    Fresh and chemically fixed sectioned plant material can be quickly stained by applying a Brook Cyte Chrome I polychrome stain. Staining time averaged only about 10 minutes. And exact timing of staining and de-staining is not as critical as with most of the commonly used stains. The overall quality is comparable to that of the traditional stains.

  3. Works close to gate B

    CERN Document Server

    GS Department

    2011-01-01

    In connection to the TRAM project, drainage works will be carried out close to gate B until the end of next week. In order to avoid access problems, if arriving by car, please use gates A and E. Department of General Infrastructure Services (GS) GS-SE Group

  4. Penn State DOE GATE Program

    Energy Technology Data Exchange (ETDEWEB)

    Anstrom, Joel

    2012-08-31

    The Graduate Automotive Technology Education (GATE) Program at The Pennsylvania State University (Penn State) was established in October 1998 pursuant to an award from the U.S. Department of Energy (U.S. DOE). The focus area of the Penn State GATE Program is advanced energy storage systems for electric and hybrid vehicles.

  5. Single photon emitters in boron nitride: More than a supplementary material

    Science.gov (United States)

    Koperski, M.; Nogajewski, K.; Potemski, M.

    2018-03-01

    We present comprehensive optical studies of recently discovered single photon sources in boron nitride, which appear in form of narrow lines emitting centres. Here, we aim to compactly characterise their basic optical properties, including the demonstration of several novel findings, in order to inspire discussion about their origin and utility. Initial inspection reveals the presence of narrow emission lines in boron nitride powder and exfoliated flakes of hexagonal boron nitride deposited on Si/SiO2 substrates. Generally rather stable, the boron nitride emitters constitute a good quality visible light source. However, as briefly discussed, certain specimens reveal a peculiar type of blinking effects, which are likely related to existence of meta-stable electronic states. More advanced characterisation of representative stable emitting centres uncovers a strong dependence of the emission intensity on the energy and polarisation of excitation. On this basis, we speculate that rather strict excitation selectivity is an important factor determining the character of the emission spectra, which allows the observation of single and well-isolated emitters. Finally, we investigate the properties of the emitting centres in varying external conditions. Quite surprisingly, it is found that the application of a magnetic field introduces no change in the emission spectra of boron nitride emitters. Further analysis of the impact of temperature on the emission spectra and the features seen in second-order correlation functions is used to provide an assessment of the potential functionality of boron nitride emitters as single photon sources capable of room temperature operation.

  6. Multi detector computed tomography (MDCT) of the aortic root; ECG-gated verses non-ECG-gated examinations

    International Nuclear Information System (INIS)

    Kristiansen, Joanna; Guenther, Anne; Aalokken, Trond Mogens; Andersen, Rune

    2011-01-01

    Purpose: Motion artifacts may degrade a conventional CT examination of the ascending aorta and hinder accurate diagnosis. We quantitatively compared retrospectively electrocardiographic (ECG) -gated multi detector computed tomography (MDCT) with non-ECG-gated MDCT in order to demonstrate whether or not one of the methods should be preferred. Method: The study included seventeen patients with surgically reconstructed aortic root and reimplanted coronary arteries. All patients had undergone both non-gated MDCT and retrospectively ECG-gated MDCT employing a stringently modulated tube current with single phase image reconstruction. The incidence of motion artifacts in the left main coronary artery (LM), proximal right coronary artery (RCA), and aortic root and ascending aorta were rated using a four point scale. The effective dose for each scan was calculated and normalized to a 15 cm scan length. Statistical analysis of motion artifacts and radiation dose was performed using Wilcoxon matched pairs signed rank sum test. Results: A significant reduction in motion artifacts was found in all three vessels in images from the retrospectively ECG-gated scans (LM: P = 0.005, RCA: P = 0.015, aorta: P = 0.003). The mean normalized effective radiation dose was 3.69 mSv (±1.03) for the non-ECG-gated scans and 16.37 mSv (±2.53) for the ECG-gated scans. Conclusion: Retrospective ECG-gating with single phase reconstruction significantly reduces the incidence of motion artifacts in the aortic root and the proximal portion of the coronary arteries but at the expense of a fourfold increase in radiation dose.

  7. Photovoltaic and photothermoelectric effect in a double-gated WSe2 device.

    Science.gov (United States)

    Groenendijk, Dirk J; Buscema, Michele; Steele, Gary A; Michaelis de Vasconcellos, Steffen; Bratschitsch, Rudolf; van der Zant, Herre S J; Castellanos-Gomez, Andres

    2014-10-08

    Tungsten diselenide (WSe2), a semiconducting transition metal dichalcogenide (TMDC), shows great potential as active material in optoelectronic devices due to its ambipolarity and direct bandgap in its single-layer form. Recently, different groups have exploited the ambipolarity of WSe2 to realize electrically tunable PN junctions, demonstrating its potential for digital electronics and solar cell applications. In this Letter, we focus on the different photocurrent generation mechanisms in a double-gated WSe2 device by measuring the photocurrent (and photovoltage) as the local gate voltages are varied independently in combination with above- and below-bandgap illumination. This enables us to distinguish between two main photocurrent generation mechanisms, the photovoltaic and photothermoelectric effect. We find that the dominant mechanism depends on the defined gate configuration. In the PN and NP configurations, photocurrent is mainly generated by the photovoltaic effect and the device displays a maximum responsivity of 0.70 mA/W at 532 nm illumination and rise and fall times close to 10 ms. Photocurrent generated by the photothermoelectric effect emerges in the PP configuration and is a factor of 2 larger than the current generated by the photovoltaic effect (in PN and NP configurations). This demonstrates that the photothermoelectric effect can play a significant role in devices based on WSe2 where a region of strong optical absorption, caused by, for example, an asymmetry in flake thickness or optical absorption of the electrodes, generates a sizable thermal gradient upon illumination.

  8. Rare-Earth Tantalates and Niobates Single Crystals: Promising Scintillators and Laser Materials

    Directory of Open Access Journals (Sweden)

    Renqin Dou

    2018-01-01

    Full Text Available Rare-earth tantalates, with high density and monoclinic structure, and niobates with monoclinic structure have been paid great attention as potential optical materials. In the last decade, we focused on the crystal growth technology of rare-earth tantalates and niobates and studied their luminescence and physical properties. A series of rare-earth tantalates and niobates crystals have been grown by the Czochralski method successfully. In this work, we summarize the research results on the crystal growth, scintillation, and laser properties of them, including the absorption and emission spectra, spectral parameters, energy levels structure, and so on. Most of the tantalates and niobates exhibit excellent luminescent properties, rich physical properties, and good chemical stability, indicating that they are potential outstanding scintillators and laser materials.

  9. Advantages of using raw materials in low cost sustainable structural solutions for single-family buildings

    OpenAIRE

    Murta, A.; Teixeira, C.; Varum, H.; Bentes, I.; Pinto, J.

    2010-01-01

    In the last decades, the Portuguese housing building industry has been mainly fo-cused on the construction based on reinforced concrete framed structures and non-structural clay brick masonry for exterior and interior partition walls. Recently, this industry started to in-clude alternative structural materials, such as steel and timber. The earth based construction techniques and solutions still remains limited to individual cases, in which the owner and/or contractor have a particular concer...

  10. Clinical performance and material properties of single-implant overdenture attachment systems.

    Science.gov (United States)

    Alsabeeha, Nabeel H M; Swain, Michael V; Payne, Alan G T

    2011-01-01

    The aim of this study was to evaluate the mechanical properties of different attachment systems used for mandibular single-implant overdentures and to compare their wear/deformation features with clinical performance in patients after 1 year. Three attachment systems were evaluated: large 5.9-mm titanium nitride-coated ball attachments with plastic matrices, standard 2.25-mm uncoated titanium alloy ball attachments with Dalla Bona-type gold alloy matrices, and Locator attachments of titanium nitride-coated patrices and nylon matrices. The hardness and elastic modulus of the systems were determined using the nanoindentation technique. Twelve attachments from each system were used in 36 edentulous patients to support mandibular single-implant overdentures. After 1 year, 5 samples from each system were retrieved and evaluated for wear changes under a scanning electron microscope. The titanium nitride-coated patrices, regardless of system, appeared unchanged and did not require any maintenance. Extensive wear was evident in the uncoated titanium alloy patrices and Dalla Bona-type gold alloy matrices, resulting in high maintenance (15 activations). Minimal wear was observed in the plastic matrices with minimal maintenance (2 replacements). The Locator nylon matrices showed extensive deformation and deterioration with a substantial need for maintenance (16 replacements). The performance of the patrices was related to hardness, while that of the matrices was related to the creep response. Large ball attachment systems of titanium nitride-coated patrices and plastic matrices reflect favorable wear behavior and clinical performance. These attachments are recommended for patients receiving mandibular single-implant overdentures.

  11. The use of a single technique for the separation and determination of actinides in biological materials

    International Nuclear Information System (INIS)

    Camera, V.; Giubileo.

    1975-01-01

    For the radiotoxicological survey of workers exposed to different types of alpha-emitting contaminants, a procedure was developed which permits the estimate of Th, Pa, U, Np, Pu, Am and Cm in biological samples with a single technique. The radionuclides are extracted on a column by tri-n-octylphosphine oxide and separated by elution at different pH values. Afterwards, the quantitative determinations are done by physical methods (alpha counting or spectrometry). In the case of an accident it is possible to use a simplification of the procedure (extraction in a beaker) for checks. A procedure for the rapid determination of actinides in faeces and in nasal secretions is described

  12. Gated equilibrium bloodpool scintigraphy

    International Nuclear Information System (INIS)

    Reinders Folmer, S.C.C.

    1981-01-01

    This thesis deals with the clinical applications of gated equilibrium bloodpool scintigraphy, performed with either a gamma camera or a portable detector system, the nuclear stethoscope. The main goal has been to define the value and limitations of noninvasive measurements of left ventricular ejection fraction as a parameter of cardiac performance in various disease states, both for diagnostic purposes as well as during follow-up after medical or surgical intervention. Secondly, it was attempted to extend the use of the equilibrium bloodpool techniques beyond the calculation of ejection fraction alone by considering the feasibility to determine ventricular volumes and by including the possibility of quantifying valvular regurgitation. In both cases, it has been tried to broaden the perspective of the observations by comparing them with results of other, invasive and non-invasive, procedures, in particular cardiac catheterization, M-mode echocardiography and myocardial perfusion scintigraphy. (Auth.)

  13. Fatigue resistance of 2 different CAD/CAM glass-ceramic materials used for single-tooth implant crowns.

    Science.gov (United States)

    Çavuşoğlu, Yeliz; Sahin, Erdal; Gürbüz, Riza; Akça, Kivanç

    2011-10-01

    To evaluate the fatigue resistance of 2 different CAD/CAM in-office monoceramic materials with single-tooth implant-supported crowns in functional area. A metal experimental model with a dental implant was designed to receive in-office CAD/CAM-generated monoceramic crowns. Laterally positioned axial dynamic loading of 300 N at 2 Hz was applied to implant-supported crowns machined from 2 different glass materials for 100,000 cycle. Failures in terms of fracture, crack formation, and chipping were macroscopically recorded and microscopically evaluated. Four of 10 aluminasilicate glass-ceramic crowns fractured at early loading cycles, the rest completed loading with a visible crack formation. Crack formation was recorded for 2 of 10 leucite glass-ceramic crowns. Others completed test without visible damage but fractured upon removal. Lack in chemical adhesion between titanium abutment and dental cement likely reduces the fatigue resistance of machinable glass-ceramic materials. However, relatively better fractural strength of leucite glass-ceramics could be taken into consideration. Accordingly, progress on developmental changes in filler composition of glass-ceramics may be promising. Machinable glass-ceramics do not possess sufficient fatigue resistance for single-tooth implant crowns in functional area.

  14. Materials

    CSIR Research Space (South Africa)

    Van Wyk, Llewellyn V

    2009-02-01

    Full Text Available community. The construction industry is a significantly consumer of materials, using 50 per cent of all products produced globally. Building materials is any material which is used for a construction purpose. Many of these materials are sources from natural...

  15. Materials Chemistry Issues in the Development of a Single-Crystal Solar/Thermal Refractive Secondary Concentrator

    Science.gov (United States)

    Jacobson, Nathan S.; Biering, Robert C.

    2005-01-01

    A translucent crystal concentrates and transmits energy to a heat exchanger, which in turn heats a propellant gas, working gas of a dynamic power system, or a thermopile. Materials are the limiting issue in such a system. Central is the durability of the crystal, which must maintain the required chemical, physical/optical, and mechanical properties as it is heated and cooled. This report summarizes available data to date on the materials issues with this system. We focus on the current leading candidate materials, which are sapphire (Al2O3) for higher temperatures and silica (SiO2) for lower temperatures. We use data from thermochemical calculations; laboratory coupon tests with silica and sapphire; and system tests with sapphire. The required chemical properties include low-vapor pressure and interfacial stability with supporting structural materials. Optical properties such as transmittance and index of refraction must be maintained. Thermomechanical stability is a major challenge for a large, single-crystal ceramic and has been discussed in another report. In addition to the crystal, other materials in the proposed system include refractory metals (Nb, Ta, Mo, W, and Re), carbon (C), and high-temperature ceramic insulation. The major issue here is low levels of oxygen, which lead to volatile refractory metal oxides and rapid consumption of the refractory metal. Interfacial reactions between the ceramic crystal and refractory metal are also discussed. Finally, high-temperature ceramic insulating materials are also likely to be used in this system. Outgassing is a major issue for these materials. The products of outgassing are typically reactive with the refractory metals and must be minimized.

  16. Simultaneous Realization of Wavelength Conversion, 2R Regeneration, and All-Optical Multiple Logic Gates with OR, NOR, XOR, and XNOR Functions Based on Self-Polarization Rotation in a Single SOA: An Experimental Approach

    Directory of Open Access Journals (Sweden)

    Youssef Said

    2012-01-01

    Full Text Available We highlight the feasibility of experimental implementation of both inverted and noninverted wavelength conversion, 2R regeneration, and all-optical logic functions, such as OR, NOR, XOR, and XNOR optical gates by exploiting the self-polarization rotation in a semiconductor optical amplifier (SOA device without changing the setup configuration. Switching between each optical function is done by only adjusting the input optical power level. In order to allow optimum control and preserve the polarization state of the injected and collected signals, the polarimetric measures have been carried out in free space.

  17. Optimisation and validation of methods to assess single nucleotide polymorphisms (SNPs) in archival histological material

    DEFF Research Database (Denmark)

    Andreassen, C N; Sørensen, Flemming Brandt; Overgaard, J

    2004-01-01

    only archival specimens are available. This study was conducted to validate protocols optimised for assessment of SNPs based on paraffin embedded, formalin fixed tissue samples. PATIENTS AND METHODS: In 137 breast cancer patients, three TGFB1 SNPs were assessed based on archival histological specimens...... precipitation). RESULTS: Assessment of SNPs based on archival histological material is encumbered by a number of obstacles and pitfalls. However, these can be widely overcome by careful optimisation of the methods used for sample selection, DNA extraction and PCR. Within 130 samples that fulfil the criteria...

  18. Interdigitated Extended Gate Field Effect Transistor Without Reference Electrode

    Science.gov (United States)

    Ali, Ghusoon M.

    2017-02-01

    An interdigitated extended gate field effect transistor (IEGFET) has been proposed as a modified pH sensor structure of an extended gate field effect transistor (EGFET). The reference electrode and the extended gate in the conventional device have been replaced by a single interdigitated extended gate. A metal-semiconductor-metal interdigitated extended gate containing two multi-finger Ni electrodes based on zinc oxide (ZnO) thin film as a pH-sensitive membrane. ZnO thin film was grown on a p-type Si (100) substrate by the sol-gel technique. The fabricated extended gate is connected to a commercial metal-oxide-semiconductor field-effect transistor device in CD4007UB. The experimental data show that this structure has real time and linear pH voltage and current sensitivities in a concentration range between pH 4 and 11. The voltage and current sensitivities are found to be about 22.4 mV/pH and 45 μA/pH, respectively. Reference electrode elimination makes the IEGFET device simple to fabricate, easy to carry out the measurements, needing a small volume of solution to test and suitable for disposable biosensor applications. Furthermore, this uncomplicated structure could be extended to fabricate multiple ions microsensors and lab-on-chip devices.

  19. Using the OSL single-aliquot regenerative-dose protocol with quartz extracted from building materials in retrospective dosimetry

    DEFF Research Database (Denmark)

    Bøtter-Jensen, L.; Solongo, S.; Murray, A.S.

    2000-01-01

    We report on the application of the single-aliquot regenerative-dose (SAR) protocol to the optically stimulated luminescence signal from quartz extracted from fired bricks acid unfired mortar in retrospective dosimetry. The samples came from a radioactive materials storage facility, with ambient...... dose rates of about 0.1 mGy/h. A detailed dose-depth profile was analysed from one brick, and compared with dose records from area TL dosemeters. Small-aliquot dose-distributions were analysed from the mortar samples; one associated with the exposed brick, and one from a remote site exposed only...

  20. Evaluation of Diffusion Coefficient in a Dextrin-Based Photo-Curable Material by Single Molecule Tracking

    Science.gov (United States)

    Ito, Syoji; Itoh, Kou; Pramanik, Smritimoy; Kusumi, Takatsugu; Takei, Satoshi; Miyasaka, Hiroshi

    2009-07-01

    The translational diffusion coefficient of a perylenediimide (PDI) derivative in a dextrin-based photo-curable material was evaluated by single molecule tracking. Irradiation by UV light for 1.0 s led to a sudden decrease in the diffusion coefficients of ca. 70% of dye molecules, while that of the remaining 30% diffused as fast as in the uncured sample. The number of fast diffusing molecules decreased with increasing UV irradiation time. The diffusion coefficient decreased due to photoinduced network formation and reached a steady value after UV irradiation >8.0 s. This slow diffusion did not cease even after UV irradiation for 32 s.

  1. Investigating flow behaviors of colloidal materials at the single-particle scale

    Science.gov (United States)

    Lin, Yen-Chih

    My thesis work focuses on the nonlinear mechanical behaviors of colloidal suspensions at the particle-level. This work covers both quiescent and strongly sheared suspensions. For quiescent suspensions, we image their 3D structures with confocal microscopy, and implement Stress Assessment from Local Structural Anisotropy (SALSA) to visualize the stress fields in them. Unlike traditional numerical methods, SALSA takes a statistical approach converting the probability of hard-sphere Brownian collisions to stresses. This direct stress measurement allows us to quantify the particle-level stresses surrounding vacancies, dislocations, and grain boundaries in crystalline materials. To drive the suspensions away from equilibrium, we develop a confocal-rheoscope, which is able to shear and image colloidal materials simultaneously. Using this device, we investigate the nonlinear flow behavior governed by Brownian motion, shear induced diffusion, and advection, and more importantly, disentangle them. We also study particle assembly and its corresponding rheological properties under confinement. Finally, we study even more strongly sheared suspensions, in which particle dynamics are too fast to be imaged by a confocal microscope. Here, we use flow reversal rheometry to reveal the underlying mechanism of suspension shear thickening where the viscosity increases with shear rate. We show that the thickening behavior of a suspension arises from the particle contact forces rather than hydrodynamic interactions. Such findings then lead us to design a biaxial shear protocol that can tune the suspension viscosity on demand. This viscosity tuning capability is a foundational step toward using dense suspensions in 3D printing, energy storage, and robotics.

  2. Strain and deformations engineered germanene bilayer double gate-field effect transistor by first principles

    Science.gov (United States)

    Meher Abhinav, E.; Chandrasekaran, Gopalakrishnan; Kasmir Raja, S. V.

    2017-10-01

    Germanene, silicene, stanene, phosphorene and graphene are some of single atomic materials with novel properties. In this paper, we explored bilayer germanene-based Double Gate-Field Effect Transistor (DG-FET) with various strains and deformations using Density Functional Theory (DFT) and Green's approach by first-principle calculations. The DG-FET of 1.6 nm width, 6 nm channel length (Lch) and HfO2 as gate dielectric has been modeled. For intrinsic deformation of germanene bilayer, we have enforced minute mechanical deformation of wrap and twist (5°) and ripple (0.5 Å) on germanene bilayer channel material. By using NEGF formalism, I-V Characteristics of various strains and deformation tailored DG-FET was calculated. Our results show that rough edge and single vacancy (5-9) in bilayer germanene diminishes the current around 47% and 58% respectively as compared with pristine bilayer germanene. In case of strain tailored bilayer DG-FET, multiple NDR regions were observed which can be utilized in building stable multiple logic states in digital circuits and high frequency oscillators using negative resistive techniques.

  3. Cluster computing software for GATE simulations

    International Nuclear Information System (INIS)

    Beenhouwer, Jan de; Staelens, Steven; Kruecker, Dirk; Ferrer, Ludovic; D'Asseler, Yves; Lemahieu, Ignace; Rannou, Fernando R.

    2007-01-01

    Geometry and tracking (GEANT4) is a Monte Carlo package designed for high energy physics experiments. It is used as the basis layer for Monte Carlo simulations of nuclear medicine acquisition systems in GEANT4 Application for Tomographic Emission (GATE). GATE allows the user to realistically model experiments using accurate physics models and time synchronization for detector movement through a script language contained in a macro file. The downside of this high accuracy is long computation time. This paper describes a platform independent computing approach for running GATE simulations on a cluster of computers in order to reduce the overall simulation time. Our software automatically creates fully resolved, nonparametrized macros accompanied with an on-the-fly generated cluster specific submit file used to launch the simulations. The scalability of GATE simulations on a cluster is investigated for two imaging modalities, positron emission tomography (PET) and single photon emission computed tomography (SPECT). Due to a higher sensitivity, PET simulations are characterized by relatively high data output rates that create rather large output files. SPECT simulations, on the other hand, have lower data output rates but require a long collimator setup time. Both of these characteristics hamper scalability as a function of the number of CPUs. The scalability of PET simulations is improved here by the development of a fast output merger. The scalability of SPECT simulations is improved by greatly reducing the collimator setup time. Accordingly, these two new developments result in higher scalability for both PET and SPECT simulations and reduce the computation time to more practical values

  4. Influence of Bias on the Friction Imaging of Ferroelectric Domains in Single Crystal Barium Titanate Energy Storage Materials

    Directory of Open Access Journals (Sweden)

    Lan Chen

    2014-01-01

    Full Text Available The friction imaging of newlycleaved surface domains of single crystal BaTiO3 energy storage materials under both positive and negative voltage bias is investigated by scanning force microscope. When the bias was applied and reversed, three regions with different brightness and contrast in friction image indicated different response to the biases: the friction image of domain A displayed a great change in brightness while domains B and C displayed only a very small change. Possible mechanisms of the interesting phenomena originating from different static force between different charged tip and the periodical array of surface charges inside the inplane domains were proposed. These results provide a new method for the determination of the polarization direction for the domain parallel to the surface and may be useful in the investigation of ferroelectric energy storage materials, especially the relationship between the polarization direction of domain and the bias.

  5. All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits

    Science.gov (United States)

    Renteria, J.; Samnakay, R.; Jiang, C.; Pope, T. R.; Goli, P.; Yan, Z.; Wickramaratne, D.; Salguero, T. T.; Khitun, A. G.; Lake, R. K.; Balandin, A. A.

    2014-01-01

    We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe2-Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

  6. All-metallic electrically gated 2H-TaSe2 thin-film switches and logic circuits

    International Nuclear Information System (INIS)

    Renteria, J.; Jiang, C.; Yan, Z.; Samnakay, R.; Goli, P.; Pope, T. R.; Salguero, T. T.; Wickramaratne, D.; Lake, R. K.; Khitun, A. G.; Balandin, A. A.

    2014-01-01

    We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe 2 were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe 2 –Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials

  7. All-metallic electrically gated 2H-TaSe{sub 2} thin-film switches and logic circuits

    Energy Technology Data Exchange (ETDEWEB)

    Renteria, J.; Jiang, C.; Yan, Z. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Samnakay, R.; Goli, P. [Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Pope, T. R.; Salguero, T. T. [Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States); Wickramaratne, D.; Lake, R. K. [Laboratory for Terascale and Terahertz Electronics, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Khitun, A. G. [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Materials Science and Engineering Program, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Balandin, A. A., E-mail: balandin@ee.ucr.edu [Nano-Device Laboratory, Department of Electrical Engineering, Bourns College of Engineering, University of California–Riverside, Riverside, California 92521 (United States); Department of Chemistry, University of Georgia, Athens, Georgia 30602 (United States)

    2014-01-21

    We report the fabrication and performance of all-metallic three-terminal devices with tantalum diselenide thin-film conducting channels. For this proof-of-concept demonstration, the layers of 2H-TaSe{sub 2} were exfoliated mechanically from single crystals grown by the chemical vapor transport method. Devices with nanometer-scale thicknesses exhibit strongly non-linear current-voltage characteristics, unusual optical response, and electrical gating at room temperature. We have found that the drain-source current in thin-film 2H-TaSe{sub 2}–Ti/Au devices reproducibly shows an abrupt transition from a highly resistive to a conductive state, with the threshold tunable via the gate voltage. Such current-voltage characteristics can be used, in principle, for implementing radiation-hard all-metallic logic circuits. These results may open new application space for thin films of van der Waals materials.

  8. GaAs-Based Nanowire Devices with Multiple Asymmetric Gates for Electrical Brownian Ratchets

    Science.gov (United States)

    Tanaka, Takayuki; Nakano, Yuki; Kasai, Seiya

    2013-06-01

    GaAs-based nanowire devices having multiple asymmetric gates for electrical Brownian ratchets were fabricated and characterized. From three-dimensional potential simulation results and current-voltage characteristics, we confirmed the formation of the asymmetric potential in our device design. Direct current was generated at room temperature by repeatedly switching the potential in a multiple-asymmetric-gate device on and off. Such current was not observed in either a single-asymmetric-gate device or a multiple-symmetric-gate device. The current direction and input frequency dependences of the net current indicated that the observed current was generated by the flashing-ratchet mechanism.

  9. Engineering single-molecule, nanoscale, and microscale bio-functional materials via click chemistry

    Science.gov (United States)

    Daniele, Michael Angelo-Anthony

    To expand the design envelope and supplement the materials library available to biomaterials scientists, the copper(I)-catalyzed azide-alkyne cycloaddition (CuCAAC) was explored as a route to design, synthesize and characterize bio-functional small-molecules, nanoparticles, and microfibers. In each engineered system, the use of click chemistry provided facile, bio-orthogonal control for materials synthesis; moreover, the results provided a methodology and more complete, fundamental understanding of the use of click chemistry as a tool for the synergy of biotechnology, polymer and materials science. Fluorophores with well-defined photophysical characteristics (ranging from UV to NIR fluorescence) were used as building blocks for small-molecule, fluorescent biosensors. Fluorophores were paired to exhibit fluorescence resonant energy transfer (FRET) and used to probe the metabolic activity of carbazole 1,9a-dioxygenase (CARDO). The FRET pair exhibited a significant variation in PL response with exposure to the lysate of Pseudomonas resinovorans CA10, an organism which can degrade variants of both the donor and acceptor fluorophores. Nanoparticle systems were modified via CuCAAC chemistry to carry affinity tags for CARDO and were subsequently utilized for affinity based bioseparation of CARDO from crude cell lysate. The enzymes were baited with an azide-modified carbazolyl-moiety attached to a poly(propargyl acrylate) nanoparticle. Magnetic nanocluster systems were also modified via CuCAAC chemistry to carry fluorescent imaging tags. The iron-oxide nanoclusters were coated with poly(acrylic acid-co-propargyl acrylate) to provide a clickable surface. Ultimately, alternate Cu-free click chemistries were utilized to produce biohybrid microfibers. The biohybrid microfibers were synthesized under benign photopolymerization conditions inside a microchannel, allowing the encapsulation of viable bacteria. By adjusting pre-polymer solutions and laminar flow rates within the

  10. Ultrafast, high precision gated integrator

    Energy Technology Data Exchange (ETDEWEB)

    Wang, X.

    1995-01-01

    An ultrafast, high precision gated integrator has been developed by introducing new design approaches that overcome the problems associated with earlier gated integrator circuits. The very high speed is evidenced by the output settling time of less than 50 ns and 20 MHz input pulse rate. The very high precision is demonstrated by the total output offset error of less than 0.2mV and the output droop rate of less than 10{mu}V/{mu}s. This paper describes the theory of this new gated integrator circuit operation. The completed circuit test results are presented.

  11. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Science.gov (United States)

    Nikzad, Shouleh; Hoenk, Michael; Jewell, April D.; Hennessy, John J.; Carver, Alexander G.; Jones, Todd J.; Goodsall, Timothy M.; Hamden, Erika T.; Suvarna, Puneet; Bulmer, J.; Shahedipour-Sandvik, F.; Charbon, Edoardo; Padmanabhan, Preethi; Hancock, Bruce; Bell, L. Douglas

    2016-01-01

    Ultraviolet (UV) studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR) and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE) measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness. PMID:27338399

  12. Single-step generation of fluorophore-encapsulated gold nanoparticle core-shell materials

    International Nuclear Information System (INIS)

    Sardar, R; Shem, P M; Pecchia-Bekkum, C; Bjorge, N S; Shumaker-Parry, J S

    2010-01-01

    We report a simple route to produce fluorophore-encapsulated gold nanoparticles (AuNPs) in a single step under aqueous conditions using the fluorophore 1-pyrenemethylamine (PMA). Different amounts of PMA were used and the resulting core-shell gold nanoparticles were analyzed using UV-visible absorption spectroscopy, fluorescence spectroscopy, and transmission and scanning electron microscopy. Electron microscopy analysis shows nanoparticles consisting of a gold nanoparticle core which is encapsulated with a lower contrast shell. In the UV-visible spectra, we observed a significant red shift (37 nm) of the localized surface plasmon resonance (LSPR) absorption maximum (λ max ) compared to citrate-stabilized AuNPs of a similar size. We attribute the prominent LSPR wavelength shift for PMA-AuNP conjugates to the increase in the local dielectric environment near the gold nanoparticles due to the shell formation. This simple, aqueous-based synthesis is a new approach to the production of fluorophore-encapsulated AuNPs that could be applicable in biological sensing systems and photonic device fabrication.

  13. MoS2 based dual input logic AND gate

    Science.gov (United States)

    Martinez, Luis M.; Pinto, Nicholas J.; Naylor, Carl H.; Johnson, A. T. Charlie

    2016-12-01

    Crystalline monolayers of CVD MoS2 are used as the active semiconducting channel in a split-gate field effect transistor. The device demonstrates logic AND functionality that is controlled by independently addressing each gate terminal with ±10V. When +10V was simultaneously applied to both gates, the device was conductive (ON), while any other combination of gate voltages rendered the device resistive (OFF). The ON/OFF ratio of the device was ˜ 35 and the charge mobility using silicon nitride as the gate dielectric was 1.2cm2/V-s and 0.1cm2/V-s in the ON and OFF states respectively. Clear discrimination between the two states was observed when a simple circuit containing a load resistor was used to test the device logic AND functionality at 10Hz. One advantage is that split gate technology can reduce the number of devices required in complex circuits, leading to compact electronics and large scale integration based on intrinsic 2-D semiconducting materials.

  14. Gated Treatment Delivery Verification With On-Line Megavoltage Fluoroscopy

    International Nuclear Information System (INIS)

    Tai An; Christensen, James D.; Gore, Elizabeth; Khamene, Ali; Boettger, Thomas; Li, X. Allen

    2010-01-01

    Purpose: To develop and clinically demonstrate the use of on-line real-time megavoltage (MV) fluoroscopy for gated treatment delivery verification. Methods and Materials: Megavoltage fluoroscopy (MVF) image sequences were acquired using a flat panel equipped for MV cone-beam CT in synchrony with the respiratory signal obtained from the Anzai gating device. The MVF images can be obtained immediately before or during gated treatment delivery. A prototype software tool (named RTReg4D) was developed to register MVF images with phase-sequenced digitally reconstructed radiograph images generated from the treatment planning system based on four-dimensional CT. The image registration can be used to reposition the patient before or during treatment delivery. To demonstrate the reliability and clinical usefulness, the system was first tested using a thoracic phantom and then prospectively in actual patient treatments under an institutional review board-approved protocol. Results: The quality of the MVF images for lung tumors is adequate for image registration with phase-sequenced digitally reconstructed radiographs. The MVF was found to be useful for monitoring inter- and intrafractional variations of tumor positions. With the planning target volume contour displayed on the MVF images, the system can verify whether the moving target stays within the planning target volume margin during gated delivery. Conclusions: The use of MVF images was found to be clinically effective in detecting discrepancies in tumor location before and during respiration-gated treatment delivery. The tools and process developed can be useful for gated treatment delivery verification.

  15. Universal control and measuring system for modern classic and amorphous magnetic materials single/on-line strip testers

    Science.gov (United States)

    Zemánek, Ivan; Havlíček, Václav

    2006-09-01

    A new universal control and measuring system for classic and amorphous soft magnetic materials single/on-line strip testing has been developed at the Czech Technical University in Prague. The measuring system allows to measure magnetization characteristic and specific power losses of different tested materials (strips) at AC magnetization of arbitrary magnetic flux density waveform at wide range of frequencies 20 Hz-20 kHz. The measuring system can be used for both single strip testing in laboratories and on-line strip testing during the production process. The measuring system is controlled by two-stage master-slave control system consisting of the external PC (master) completed by three special A/D measuring plug-in boards, and local executing control unit (slave) with one-chip microprocessor 8051, connected with PC by the RS232 serial line. The "user friendly" powerful control software implemented on the PC and the effective program code for the microprocessor give possibility for full automatic measurement with high measuring power and high measuring accuracy.

  16. Inorganic metallodielectric materials fabricated using two single-step methods based on the Tollen's process.

    Science.gov (United States)

    Peterson, Molly S M; Bouwman, Jason; Chen, Aiqing; Deutsch, Miriam

    2007-02-01

    Two methods for preparing polycrystalline silver shells on colloidal silica spheres are reported. These do not include the use of organic ligands or metal seeding steps and are based on the Tollen's process for silvering glass. Reaction parameters such as temperature and reactant concentrations are adjusted to slow the reaction kinetics, which we find leads to preferential silver growth on the spheres. The resulting shells are polycrystalline and granular, showing highly uniform sphere coverage. Surface morphologies range from sparsely interconnected grains for shells approximately 20 nm thick, to complete (yet porous) shells of interconnected silver clusters which are up to approximately 140 nm in thickness. The extinction spectra of the core-shell materials are markedly different from those of smooth continuous shells, showing clear evidence that the granular shell geometry influences the plasmon resonance of the composite system. Spheres coated with shells 20-40 nm thick are also suitable for colloidal crystallization. Monolayers of self-assembled spheres with long-range ordering are demonstrated.

  17. Single Photon Counting UV Solar-Blind Detectors Using Silicon and III-Nitride Materials

    Directory of Open Access Journals (Sweden)

    Shouleh Nikzad

    2016-06-01

    Full Text Available Ultraviolet (UV studies in astronomy, cosmology, planetary studies, biological and medical applications often require precision detection of faint objects and in many cases require photon-counting detection. We present an overview of two approaches for achieving photon counting in the UV. The first approach involves UV enhancement of photon-counting silicon detectors, including electron multiplying charge-coupled devices and avalanche photodiodes. The approach used here employs molecular beam epitaxy for delta doping and superlattice doping for surface passivation and high UV quantum efficiency. Additional UV enhancements include antireflection (AR and solar-blind UV bandpass coatings prepared by atomic layer deposition. Quantum efficiency (QE measurements show QE > 50% in the 100–300 nm range for detectors with simple AR coatings, and QE ≅ 80% at ~206 nm has been shown when more complex AR coatings are used. The second approach is based on avalanche photodiodes in III-nitride materials with high QE and intrinsic solar blindness.

  18. Histopathological Alterations after Single Epidural Injection of Ropivacaine, Methylprednizolone Acetate, or Contrast Material in Swine

    International Nuclear Information System (INIS)

    Kitsou, Maria-Chrysanthi; Kostopanagiotou, Georgia; Kalimeris, Konstantinos; Vlachodimitropoulos, Demetrios; Soultanis, Konstantinos; Batistaki, Chrysanthi; Kelekis, Alexis

    2011-01-01

    Purpose: The consequences from the injection of different types of drugs in the epidural space remains unknown. Increasing evidence suggests that localized inflammation, fibrosis, and arachnoiditis can complicate sequential epidural blockades, or even epidural contrast injection. We investigate the in vivo effect of epidural injections in the epidural space in an animal model. Materials and Methods: A group of ten male adult pigs, five punctures to each at distinct vertebral interspaces under general anesthesia, were examined, testing different drugs, used regularly in the epidural space (iopamidol, methylprednisolone acetate, ropivacaine). Each site was marked with a percutaneous hook wire marker. Histological analysis of the epidural space, the meninges, and the underlying spinal cord of the punctured sites along with staining for caspase-3 followed 20 days later. Results: The epidural space did not manifest adhesions or any other pathology, and the outer surface of the dura was not impaired in any specimen. The group that had the contrast media injection showed a higher inflammation response compared to the other groups (P = 0.001). Positive staining for caspase-3 was limited to <5% of neurons with all substances used. Conclusion: No proof of arachnoiditis and/or fibrosis was noted in the epidural space with the use of the above-described drugs. A higher inflammation rate was noted with the use of contrast media.

  19. Slow-muon study of quaternary solar-cell materials: Single layers and p -n junctions

    Science.gov (United States)

    Alberto, H. V.; Vilão, R. C.; Vieira, R. B. L.; Gil, J. M.; Weidinger, A.; Sousa, M. G.; Teixeira, J. P.; da Cunha, A. F.; Leitão, J. P.; Salomé, P. M. P.; Fernandes, P. A.; Törndahl, T.; Prokscha, T.; Suter, A.; Salman, Z.

    2018-02-01

    Thin films and p -n junctions for solar cells based on the absorber materials Cu (In ,G a ) Se2 and Cu2ZnSnS4 were investigated as a function of depth using implanted low energy muons. The most significant result is a clear decrease of the formation probability of the Mu+ state at the heterojunction interface as well as at the surface of the Cu (In ,G a ) Se2 film. This reduction is attributed to a reduced bonding reaction of the muon in the absorber defect layer at its surface. In addition, the activation energies for the conversion from a muon in an atomiclike configuration to a anion-bound position are determined from temperature-dependence measurements. It is concluded that the muon probe provides a measurement of the effective surface defect layer width, both at the heterojunctions and at the films. The CIGS surface defect layer is crucial for solar-cell electrical performance and additional information can be used for further optimizations of the surface.

  20. 49 CFR 234.223 - Gate arm.

    Science.gov (United States)

    2010-10-01

    ... 49 Transportation 4 2010-10-01 2010-10-01 false Gate arm. 234.223 Section 234.223 Transportation... Maintenance Standards § 234.223 Gate arm. Each gate arm, when in the downward position, shall extend across... clearly viewed by approaching highway users. Each gate arm shall start its downward motion not less than...

  1. Demonstration of a Quantum Nondemolition Sum Gate

    DEFF Research Database (Denmark)

    Yoshikawa, J.; Miwa, Y.; Huck, Alexander

    2008-01-01

    The sum gate is the canonical two-mode gate for universal quantum computation based on continuous quantum variables. It represents the natural analogue to a qubit C-NOT gate. In addition, the continuous-variable gate describes a quantum nondemolition (QND) interaction between the quadrature...

  2. Reversible logic gates on Physarum Polycephalum

    International Nuclear Information System (INIS)

    Schumann, Andrew

    2015-01-01

    In this paper, we consider possibilities how to implement asynchronous sequential logic gates and quantum-style reversible logic gates on Physarum polycephalum motions. We show that in asynchronous sequential logic gates we can erase information because of uncertainty in the direction of plasmodium propagation. Therefore quantum-style reversible logic gates are more preferable for designing logic circuits on Physarum polycephalum

  3. ZIF-8 gate tuning via terminal group modification: a computational study

    KAUST Repository

    Zheng, Bin

    2016-06-24

    Tuning the pore structure of zeolitic imidazolate frameworks (ZIFs) enables unique control of their material properties. In this work, we used computational methods to examine the gate structure of ZIF-8 tuned by substitution terminal groups. The substitution position and electron affinity of the added groups were shown to be key factors in gate size. Electrostatic interactions are responsible for the variation in gate opening. These results suggest that the post-modification of terminal group in ZIFs can be used to finely tune the pore gate, opening up new strategies in the design of ZIFs with desired properties.

  4. Bill Gates vil redde Folkeskolen

    DEFF Research Database (Denmark)

    Fejerskov, Adam Moe

    2014-01-01

    Det amerikanske uddannelsessystem bliver for tiden udsat for hård kritik, ledt an af Microsoft stifteren Bill Gates. Gates har indtil videre brugt 3 mia. kroner på at skabe opbakning til tiltag som præstationslønning af lærere og strømlining af pensum på tværs af alle skoler i landet...

  5. Speed limits for quantum gates in multiqubit systems

    NARCIS (Netherlands)

    Ashhab, S.; De Groot, P.C.; Nori, F.

    2012-01-01

    We use analytical and numerical calculations to obtain speed limits for various unitary quantum operations in multiqubit systems under typical experimental conditions. The operations that we consider include single-, two-, and three-qubit gates, as well as quantum-state transfer in a chain of

  6. Latest design of gate valves

    Energy Technology Data Exchange (ETDEWEB)

    Kurzhofer, U.; Stolte, J.; Weyand, M.

    1996-12-01

    Babcock Sempell, one of the most important valve manufacturers in Europe, has delivered valves for the nuclear power industry since the beginning of the peaceful application of nuclear power in the 1960s. The latest innovation by Babcock Sempell is a gate valve that meets all recent technical requirements of the nuclear power technology. At the moment in the United States, Germany, Sweden, and many other countries, motor-operated gate and globe valves are judged very critically. Besides the absolute control of the so-called {open_quotes}trip failure,{close_quotes} the integrity of all valve parts submitted to operational forces must be maintained. In case of failure of the limit and torque switches, all valve designs have been tested with respect to the quality of guidance of the gate. The guidances (i.e., guides) shall avoid a tilting of the gate during the closing procedure. The gate valve newly designed by Babcock Sempell fulfills all these characteristic criteria. In addition, the valve has cobalt-free seat hardfacing, the suitability of which has been proven by friction tests as well as full-scale blowdown tests at the GAP of Siemens in Karlstein, West Germany. Babcock Sempell was to deliver more than 30 gate valves of this type for 5 Swedish nuclear power stations by autumn 1995. In the presentation, the author will report on the testing performed, qualifications, and sizing criteria which led to the new technical design.

  7. Mitigation of Critical Single Point Failure (SPF) Material - Laminac 4116 Binder Replacement Program for Parachute and Cluster Stars Illuminant Compositions for Hand Held Signals

    National Research Council Canada - National Science Library

    Lakshminarayanan, G. R; Chen, Gary; Ames, Richard; Lee, Wai T; Wejsa, James L

    2006-01-01

    Laminac 4116 binder has been identified as a single point failure (SPF) material since it is being produced by only one company and there is a possibility that the company may discontinue production due to low product demand...

  8. The role of prosthetic abutment material on the stress distribution in a maxillary single implant-supported fixed prosthesis

    Energy Technology Data Exchange (ETDEWEB)

    Peixoto, Hugo Eduardo, E-mail: hugo.e.peixoto@hotmail.com [Implantology Team, Latin American Institute of Research and Education in Dentistry, Curitiba, Paraná (Brazil); Bordin, Dimorvan, E-mail: dimorvan_bordin@hotmail.com [Department of Prosthodontics and Periodontology, Piracicaba Dental School, State University of Campinas, Limeira avenue, 901-Vila Rezende, Piracicaba, SP 13414-903 (Brazil); Del Bel Cury, Altair A., E-mail: altcury@fop.unicamp.br [Department of Prosthodontics and Periodontology, Piracicaba Dental School, State University of Campinas, Limeira avenue, 901-Vila Rezende, Piracicaba, SP 13414-903 (Brazil); Silva, Wander José da, E-mail: wanderjose@fop.unicamp.br [Department of Prosthodontics and Periodontology, Piracicaba Dental School, State University of Campinas, Limeira avenue, 901-Vila Rezende, Piracicaba, SP 13414-903 (Brazil); Faot, Fernanda, E-mail: fernanda.faot@gmail.com [Department of Restorative Dentistry, School of Dentistry, Federal University of Pelotas, Gonçalves Chaves, 457, 2nd floor, Pelotas, Rio Grande do Sul 96015-560 (Brazil)

    2016-08-01

    Purpose: Evaluate the influence of abutment's material and geometry on stress distribution in a single implant-supported prosthesis. Materials and Methods: Three-dimensional models were made based on tomographic slices of the upper middle incisor area, in which a morse taper implant was positioned and a titanium (Ti) or zirconia (ZrN) universal abutments was installed. The commercially available geometry of titanium (T) and zirconia (Z) abutments were used to draw two models, TM1 and ZM1 respectively, which served as control groups. These models were compared with 2 experimental groups were the mechanical properties of Z were applied to the titanium abutment (TM2) and vice versa for the zirconia abutment (ZM2). Subsequently, loading was simulated in two steps, starting with a preload phase, calculated with the respective friction coefficients of each materials, followed by a combined preload and chewing force. The maximum von Mises stress was described. Data were analyzed by two-way ANOVA that considered material composition, geometry and loading (p < 0.05). Results: Titanium and zirconia abutments showed similar von Mises stresses in the mechanical part of the four models. The area with the highest concentration of stress was the screw thread, following by the screw body. The highest stress levels occurred in screw thread was observed during the preloading phase in the ZM1 model (931 MPa); and during the combined loading in the TM1 model (965 MPa). Statistically significant differences were observed for loading, the material × loading interaction, and the loading × geometry interaction (p < 0.05). Preloading contributed for 77.89% of the stress (p < 0.05). There were no statistically significant differences to the other factors (p > 0.05). Conclusion: The screw was the piece most intensely affected, mainly through the preload force, independent of the abutment's material. - Highlights: • The abutment's screw was the most impaired piece of the

  9. Ultra-Low Power Consuming Direct Radiation Sensors Based on Floating Gate Structures

    Directory of Open Access Journals (Sweden)

    Evgeny Pikhay

    2017-07-01

    Full Text Available In this paper, we report on ultra-low power consuming single poly floating gate direct radiation sensors. The developed devices are intended for total ionizing dose (TID measurements and fabricated in a standard CMOS process flow. Sensor design and operation is discussed in detail. Original array sensors were suggested and fabricated that allowed high statistical significance of the radiation measurements and radiation imaging functions. Single sensors and array sensors were analyzed in combination with the specially developed test structures. This allowed insight into the physics of sensor operations and exclusion of the phenomena related to material degradation under irradiation in the interpretation of the measurement results. Response of the developed sensors to various sources of ionizing radiation (Gamma, X-ray, UV, energetic ions was investigated. The optimal design of sensor for implementation in dosimetry systems was suggested. The roadmap for future improvement of sensor performance is suggested.

  10. Protected quantum computing: interleaving gate operations with dynamical decoupling sequences.

    Science.gov (United States)

    Zhang, Jingfu; Souza, Alexandre M; Brandao, Frederico Dias; Suter, Dieter

    2014-02-07

    Implementing precise operations on quantum systems is one of the biggest challenges for building quantum devices in a noisy environment. Dynamical decoupling attenuates the destructive effect of the environmental noise, but so far, it has been used primarily in the context of quantum memories. Here, we experimentally demonstrate a general scheme for combining dynamical decoupling with quantum logical gate operations using the example of an electron-spin qubit of a single nitrogen-vacancy center in diamond. We achieve process fidelities >98% for gate times that are 2 orders of magnitude longer than the unprotected dephasing time T2.

  11. Materialism.

    Science.gov (United States)

    Melnyk, Andrew

    2012-05-01

    Materialism is nearly universally assumed by cognitive scientists. Intuitively, materialism says that a person's mental states are nothing over and above his or her material states, while dualism denies this. Philosophers have introduced concepts (e.g., realization and supervenience) to assist in formulating the theses of materialism and dualism with more precision, and distinguished among importantly different versions of each view (e.g., eliminative materialism, substance dualism, and emergentism). They have also clarified the logic of arguments that use empirical findings to support materialism. Finally, they have devised various objections to materialism, objections that therefore serve also as arguments for dualism. These objections typically center around two features of mental states that materialism has had trouble in accommodating. The first feature is intentionality, the property of representing, or being about, objects, properties, and states of affairs external to the mental states. The second feature is phenomenal consciousness, the property possessed by many mental states of there being something it is like for the subject of the mental state to be in that mental state. WIREs Cogn Sci 2012, 3:281-292. doi: 10.1002/wcs.1174 For further resources related to this article, please visit the WIREs website. Copyright © 2012 John Wiley & Sons, Ltd.

  12. Single Electron Tunneling

    International Nuclear Information System (INIS)

    Ruggiero, Steven T.

    2005-01-01

    Financial support for this project has led to advances in the science of single-electron phenomena. Our group reported the first observation of the so-called ''Coulomb Staircase'', which was produced by tunneling into ultra-small metal particles. This work showed well-defined tunneling voltage steps of width e/C and height e/RC, demonstrating tunneling quantized on the single-electron level. This work was published in a now well-cited Physical Review Letter. Single-electron physics is now a major sub-field of condensed-matter physics, and fundamental work in the area continues to be conducted by tunneling in ultra-small metal particles. In addition, there are now single-electron transistors that add a controlling gate to modulate the charge on ultra-small photolithographically defined capacitive elements. Single-electron transistors are now at the heart of at least one experimental quantum-computer element, and single-electron transistor pumps may soon be used to define fundamental quantities such as the farad (capacitance) and the ampere (current). Novel computer technology based on single-electron quantum dots is also being developed. In related work, our group played the leading role in the explanation of experimental results observed during the initial phases of tunneling experiments with the high-temperature superconductors. When so-called ''multiple-gap'' tunneling was reported, the phenomenon was correctly identified by our group as single-electron tunneling in small grains in the material. The main focus throughout this project has been to explore single electron phenomena both in traditional tunneling formats of the type metal/insulator/particles/insulator/metal and using scanning tunneling microscopy to probe few-particle systems. This has been done under varying conditions of temperature, applied magnetic field, and with different materials systems. These have included metals, semi-metals, and superconductors. Amongst a number of results, we have

  13. Compound list: rosiglitazone maleate [Open TG-GATEs

    Lifescience Database Archive (English)

    Full Text Available rosiglitazone maleate RGZ 00151 ftp://ftp.biosciencedbc.jp/archive/open-tggates/LAT...EST/Human/in_vitro/rosiglitazone_maleate.Human.in_vitro.Liver.zip ftp://ftp.biosciencedbc.jp/archive/open-tg...gates/LATEST/Rat/in_vivo/Liver/Single/rosiglitazone_maleate.Rat.in_vivo.Liver.Single.zip ftp://ftp.bioscienc...edbc.jp/archive/open-tggates/LATEST/Rat/in_vivo/Liver/Repeat/rosiglitazone_maleate.Rat.in_vivo.Liver.Repeat.zip ...

  14. Wear resistance of thick diamond like carbon coatings against polymeric materials used in single screw plasticizing technology

    Science.gov (United States)

    Zitzenbacher, G.; Liu, K.; Forsich, C.; Heim, D.

    2015-05-01

    Wear on the screw and barrel surface accompany polymer single screw plasticizing technology from the beginning. In general, wear on screws can be reduced by using nitrided steel surfaces, fused armour alloys on the screw flights and coatings. However, DLC-coatings (Diamond Like Carbon) comprise a number of interesting properties such as a high hardness, a low coefficient of friction and an excellent corrosion resistance due to their amorphous structure. The wear resistance of about 50 µm thick DLC-coatings against polyamide 6.6, polybutylene terephthalate and polypropylene is investigated in this paper. The tribology in the solids conveying zone of a single screw extruder until the beginning of melting is evaluated using a pin on disc tribometer and a so called screw tribometer. The polymeric pins are pressed against coated metal samples using the pin on disc tribometer and the tests are carried out at a defined normal force and sliding velocity. The screw tribometer is used to perform tribological experiments between polymer pellets and rotating coated metal shafts simulating the extruder screw. Long term experiments were performed to evaluate the wear resistance of the DLC-coating. A reduction of the coefficient of friction can be observed after a frictional distance of about 20 kilometers using glass fibre reinforced polymeric materials. This reduction is independent on the polymer and accompanied by a black layer on the wear surface of the polymeric pins. The DLC-coated metal samples show an up to 16 µm deep wear track after the 100 kilometer test period against the glass fiber filled materials only.

  15. Burnout and gate rupture of power MOS transistors with fission fragments of 252Cf

    International Nuclear Information System (INIS)

    Tang Benqi; Wang Yanping; Geng Bin; Chen Xiaohua; He Chaohui; Yang Hailiang

    2000-01-01

    A study to determine the single event burnout (SEB) and single event gate rupture (SEGR) sensitivities of power MOSFET devices is carried out by exposure to fission fragments from 252 Cf source. The test method, test results, a description of observed burnout current waveforms and a discussion of a possible failure mechanism are presented. The test results include the observed dependence upon applied drain or gate to source bias and effect of external capacitors and limited resistors

  16. Inexpensive Home-Made Single Wavelength Ellipsometer (λ = 633 nm) for Measuring the Optical Constant of Nanostructured Materials

    Science.gov (United States)

    Maulana, L. Z.; Megasari, K.; Suharyadi, E.; Anugraha, R.; Abraha, K.; Santoso, I.

    2017-05-01

    Inexpensive home-made Single wavelength Ellipsometry with RAE (Rotating Analyser Ellipsometer) configuration has been developed. Spectroscopic ellipsometry (SE) is an optical measurement technique which is based on the measurement of the change of the phase difference (Δ) and the amplitude ratio (ψ) between p and s linear polarized of reflected (or transmitted) light. Our RAE configuration system composed of polarizer, sample, analyzer, detector, and He-Ne laser (λ = 633 nm) that acted as the monochromatic light source. To test the reliability of our SE system, we measure the optical constant of Au bulk and Cr (30 nm thick) film. The optical constant and the thickness were extracted by employing the pseudo-dielectric function and numerical inversion which is based on the secant method, the ψ and Δ of our SE data which is modelled by Fresnel equation. From the extraction using the secant method we obtain the optical constant of the Au bulk sample with n = 0.11 to 0.22 and k = 3.26 to 3.37 which is close to that of using pseudo-dielectric method. We obtain the same result for Cr film with n = 3.66 to 3.81 and k = 5.32 to 5.38 which is close to the result from reference. These results show that our inexpensive home-made Single wavelength Ellipsometry instrument and the extraction method are reliable for determining the optical constant of nanostructured materials.

  17. Investigation of the particle size distribution of the ejected material generated during the single femtosecond laser pulse ablation of aluminium

    International Nuclear Information System (INIS)

    Wu, Han; Zhang, Nan; Zhu, Xiaonong

    2014-01-01

    Highlights: • Single 50 fs laser pulse ablation of an aluminium target in vacuum is investigated in our experiments. • Nanoparticles with large radii of several hundred nanometers are observed. • The nanoparticles are most likely from the mechanical tensile stress relaxation. - Abstract: Single femtosecond laser pulses are employed to ablate an aluminium target in vacuum, and the particle size distribution of the ablated material deposited on a mica substrate is examined with atomic force microscopy (AFM). The recorded AFM images show that these particles have a mean radius of several tens of nanometres. It is also determined that the mean radius of these deposited nanoparticles increases when the laser fluence at the aluminium target increases from 0.44 J/cm 2 to 0.63 J/cm 2 . The mechanism of the laser-induced nanoparticle generation is thought to be photomechanical tensile stress relaxation. Raman spectroscopy measurements confirm that the nanoparticles thus produced have the same structure as the bulk aluminium

  18. Reduction of skin effect losses in double-level-T-gate structure

    Energy Technology Data Exchange (ETDEWEB)

    Mikulics, M., E-mail: m.mikulics@fz-juelich.de; Hardtdegen, H.; Arango, Y. C.; Adam, R.; Fox, A.; Grützmacher, D. [Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich, D-52425 Jülich (Germany); Jülich-Aachen Research Alliance, JARA, Fundamentals of Future Information Technology, D-52425 Jülich (Germany); Gregušová, D.; Novák, J. [Institute of Electrical Engineering, Slovak Academy of Sciences, SK-84104 Bratislava (Slovakia); Stanček, S. [Department of Nuclear Physic and Technique, Slovak University of Technology, SK-81219 Bratislava (Slovakia); Kordoš, P. [Institute of Electronics and Photonics, Slovak University of Technology, SK-81219 Bratislava (Slovakia); Sofer, Z. [Department of Inorganic Chemistry, Institute of Chemical Technology, Technická 5, Prague 6 (Czech Republic); Juul, L.; Marso, M. [Faculté des Sciences, de la Technologie et de la Communication, Université du Luxembourg, L-1359 Luxembourg (Luxembourg)

    2014-12-08

    We developed a T-gate technology based on selective wet etching yielding 200 nm wide T-gate structures used for fabrication of High Electron Mobility Transistors (HEMT). Major advantages of our process are the use of only standard photolithographic process and the ability to generate T-gate stacks. A HEMT fabricated on AlGaN/GaN/sapphire with gate length L{sub g} = 200 nm and double-stacked T-gates exhibits 60 GHz cutoff frequency showing ten-fold improvement compared to 6 GHz for the same device with 2 μm gate length. HEMTs with a double-level-T-gate (DLTG) structure exhibit up to 35% improvement of f{sub max} value compared to a single T-gate device. This indicates a significant reduction of skin effect losses in DLTG structure compared to its standard T-gate counterpart. These results agree with the theoretical predictions.

  19. Four-Dimensional Lung Treatment Planning in Layer-Stacking Carbon Ion Beam Treatment: Comparison of Layer-Stacking and Conventional Ungated/Gated Irradiation

    International Nuclear Information System (INIS)

    Mori, Shinichiro; Kanematsu, Nobuyuki; Asakura, Hiroshi; Sharp, Gregory C.; Kumagai, Motoki; Dobashi, Suguru; Nakajima, Mio; Yamamoto, Naoyoshi; Kandatsu, Susumu; Baba, Masayuki

    2011-01-01

    Purpose: We compared four-dimensional (4D) layer-stacking and conventional carbon ion beam distribution in the treatment of lung cancer between ungated and gated respiratory strategies using 4DCT data sets. Methods and Materials: Twenty lung patients underwent 4DCT imaging under free-breathing conditions. Using planning target volumes (PTVs) at respective respiratory phases, two types of compensating bolus were designed, a full single respiratory cycle for the ungated strategy and an approximately 30% duty cycle for the exhalation-gated strategy. Beams were delivered to the PTVs for the ungated and gated strategies, PTV(ungated) and PTV(gated), respectively, which were calculated by combining the respective PTV(Tn)s by layer-stacking and conventional irradiation. Carbon ion beam dose distribution was calculated as a function of respiratory phase by applying a compensating bolus to 4DCT. Accumulated dose distributions were calculated by applying deformable registration. Results: With the ungated strategy, accumulated dose distributions were satisfactorily provided to the PTV, with D95 values for layer-stacking and conventional irradiation of 94.0% and 96.2%, respectively. V20 for the lung and Dmax for the spinal cord were lower with layer-stacking than with conventional irradiation, whereas Dmax for the skin (14.1 GyE) was significantly lower (21.9 GyE). In addition, dose conformation to the GTV/PTV with layer-stacking irradiation was better with the gated than with the ungated strategy. Conclusions: Gated layer-stacking irradiation allows the delivery of a carbon ion beam to a moving target without significant degradation of dose conformity or the development of hot spots.

  20. The single-shot opto-digitizer

    International Nuclear Information System (INIS)

    Nail, M.; Gibert, Ph.

    2000-01-01

    Laser-plasma experiments need to measure signals provided either by X-ray, photonic or neutronic detector. The measurement should have 50 GHz bandwidth and up to several hundred of Giga-Hertz for sub picosecond plasmas. For this purpose, a 35 GHz single shot opto-digitizer (10 ps risetime) has been studied and built. The device is made up of a 50 ohms microstrip propagation line, periodically lined by 100 sampled gates. The propagation line is long enough to measure a 400 ps duration. The sampling rate is 250 Gsa/s (every 4 ps). The sampled gates are made with fast recombining photo-material and turn on by a subpicosecond laser pulse which is synchronized exactly with the analysed phenomena. Every gate is recording to a storing capacitor. After the recording, every capacitor charge is needed to built the signal that was displayed on the propagation line. The dynamic range of measurement is 47 for the entire device. The device can measure positive or negative signals from 1.5 to 70 Volts. To increase the bandwidth, two another kinds of opto-digitizer were studied: one is a buried stripline with 56 GHz band width, the other a 70 GHz coplanar transmission line. For the purpose of subpicosecond plasmas, a 30 coplanar waveguide opto-digitizer was studied. Characteristics are as followed: window of measurement 40 ps, sampling rate 1 ps, bandwidth 230 GHz. Finally, a bundle of optical fibers was used to propagate the laser beam on semiconductor gates. If the gates are lighted at the same time, i.e. if the optical fibers have the same length, we get a simultaneous addressing. By using different lengths of optical fibers, we can do a sequential addressing. So, the sampling rate becomes a combination of the distance between two adjacent sampled channels, and the difference in length of optical fibers. (author)

  1. Sensory gating in primary insomnia.

    Science.gov (United States)

    Hairston, Ilana S; Talbot, Lisa S; Eidelman, Polina; Gruber, June; Harvey, Allison G

    2010-06-01

    Although previous research indicates that sleep architecture is largely intact in primary insomnia (PI), the spectral content of the sleeping electroencephalographic trace and measures of brain metabolism suggest that individuals with PI are physiologically more aroused than good sleepers. Such observations imply that individuals with PI may not experience the full deactivation of sensory and cognitive processing, resulting in reduced filtering of external sensory information during sleep. To test this hypothesis, gating of sensory information during sleep was tested in participants with primary insomnia (n = 18) and good sleepers (n = 20). Sensory gating was operationally defined as (i) the difference in magnitude of evoked response potentials elicited by pairs of clicks presented during Wake and Stage II sleep, and (ii) the number of K complexes evoked by the same auditory stimulus. During wake the groups did not differ in magnitude of sensory gating. During sleep, sensory gating of the N350 component was attenuated and completely diminished in participants with insomnia. P450, which occurred only during sleep, was strongly gated in good sleepers, and less so in participants with insomnia. Additionally, participants with insomnia showed no stimulus-related increase in K complexes. Thus, PI is potentially associated with impaired capacity to filter out external sensory information, especially during sleep. The potential of using stimulus-evoked K complexes as a biomarker for primary insomnia is discussed.

  2. Characterization of the solid, airborne materials created when UF6 reacts with moist air flowing in single-pass mode

    International Nuclear Information System (INIS)

    Pickrell, P.W.

    1985-10-01

    A series of experiments has been performed in which UF 6 was released into flowing air in order to characterize the solid particulate material produced under non-static conditions. In two of the experiments, the aerosol was allowed to stagnate in a static chamber after release and examined further but in the other experiments characterization was done only on material collected a few seconds after release. Transmission electron microscopy and mass measurement by cascaded impactor were used to characterize the aerosol particles which were usually single spheroids with little agglomeration in evidence. The goal of the work is to determine the chemistry and physics of the UF 6 -atmospheric moisture reaction under a variety of conditions so that information about resulting species and product morphologies is available for containment and removal (knockdown) studies as well as for dispersion plume modeling and toxicology studies. This report completes the milestone for reporting the information obtained from releases of UF 6 into flowing rather than static air. 26 figs., 3 tabs

  3. Structure of a eukaryotic cyclic nucleotide-gated channel

    Science.gov (United States)

    Li, Minghui; Zhou, Xiaoyuan; Wang, Shu; Michailidis, Ioannis; Gong, Ye; Su, Deyuan; Li, Huan; Li, Xueming; Yang, Jian

    2018-01-01

    Summary Cyclic nucleotide-gated (CNG) channels are essential for vision and olfaction. They belong to the voltage-gated ion channel superfamily but their activities are controlled by intracellular cyclic nucleotides instead of transmembrane voltage. Here we report a 3.5 Å-resolution single-particle electron cryomicroscopy structure of a CNG channel from C. elegans in the cGMP-bound open state. The channel has an unusual voltage-sensor-like domain (VSLD), accounting for its deficient voltage dependence. A C-terminal linker connecting S6 and the cyclic nucleotide-binding domain interacts directly with both the VSLD and pore domain, forming a gating ring that couples conformational changes triggered by cyclic nucleotide binding to the gate. The selectivity filter is lined by the carboxylate side chains of a functionally important glutamate and three rings of backbone carbonyls. This structure provides a new framework for understanding mechanisms of ion permeation, gating and channelopathy of CNG channels and cyclic nucleotide modulation of related channels. PMID:28099415

  4. A CNOT gate between multiphoton qubits encoded in two cavities.

    Science.gov (United States)

    Rosenblum, S; Gao, Y Y; Reinhold, P; Wang, C; Axline, C J; Frunzio, L; Girvin, S M; Jiang, Liang; Mirrahimi, M; Devoret, M H; Schoelkopf, R J

    2018-02-13

    Entangling gates between qubits are a crucial component for performing algorithms in quantum computers. However, any quantum algorithm must ultimately operate on error-protected logical qubits encoded in high-dimensional systems. Typically, logical qubits are encoded in multiple two-level systems, but entangling gates operating on such qubits are highly complex and have not yet been demonstrated. Here we realize a controlled NOT (CNOT) gate between two multiphoton qubits in two microwave cavities. In this approach, we encode a qubit in the high-dimensional space of a single cavity mode, rather than in multiple two-level systems. We couple two such encoded qubits together through a transmon, which is driven by an RF pump to apply the gate within 190 ns. This is two orders of magnitude shorter than the decoherence time of the transmon, enabling a high-fidelity gate operation. These results are an important step towards universal algorithms on error-corrected logical qubits.

  5. 3D modeling of dual-gate FinFET.

    Science.gov (United States)

    Mil'shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

    2012-11-13

    The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence on the strengths of the electrical field along the channel. However, in cases when the ratio of FinFET volume to its surface dramatically decreases, one should carefully consider the surface boundary conditions of the device. Moreover, the inherent non-planar nature of a FinFET demands 3D modeling for accurate analysis of the device performance. Using the Silvaco modeling tool with quantization effects, we modeled a physical FinFET described in the work of Hisamoto et al. (IEEE Tran. Elec. Devices 47:12, 2000) in 3D. We compared it with a 2D model of the same device. We demonstrated that 3D modeling produces more accurate results. As 3D modeling results came close to experimental measurements, we made the next step of the study by designing a dual-gate FinFET biased at Vg1 >Vg2. It is shown that the dual-gate FinFET carries higher transconductance than the single-gate device.

  6. Switching terahertz waves with gate-controlled active graphene metamaterials.

    Science.gov (United States)

    Lee, Seung Hoon; Choi, Muhan; Kim, Teun-Teun; Lee, Seungwoo; Liu, Ming; Yin, Xiaobo; Choi, Hong Kyw; Lee, Seung S; Choi, Choon-Gi; Choi, Sung-Yool; Zhang, Xiang; Min, Bumki

    2012-11-01

    The extraordinary electronic properties of graphene provided the main thrusts for the rapid advance of graphene electronics. In photonics, the gate-controllable electronic properties of graphene provide a route to efficiently manipulate the interaction of photons with graphene, which has recently sparked keen interest in graphene plasmonics. However, the electro-optic tuning capability of unpatterned graphene alone is still not strong enough for practical optoelectronic applications owing to its non-resonant Drude-like behaviour. Here, we demonstrate that substantial gate-induced persistent switching and linear modulation of terahertz waves can be achieved in a two-dimensional metamaterial, into which an atomically thin, gated two-dimensional graphene layer is integrated. The gate-controllable light-matter interaction in the graphene layer can be greatly enhanced by the strong resonances of the metamaterial. Although the thickness of the embedded single-layer graphene is more than six orders of magnitude smaller than the wavelength (wave by up to 47% and its phase by 32.2° at room temperature. More interestingly, the gate-controlled active graphene metamaterials show hysteretic behaviour in the transmission of terahertz waves, which is indicative of persistent photonic memory effects.

  7. Impact of prosthetic material on mid- and long-term outcome of dental implants supporting single crowns and fixed partial dentures: A systematic review and meta-analysis.

    Science.gov (United States)

    Abou-Ayash, Samir; Strasding, Malin; Rücker, Gerta; Att, Wael

    The impact of prosthetic material selection on implant survival is not clear. The current criteria for choosing a prosthetic material seem to be based on clinician preferences. This systematic review aims to evaluate the impact of restorative materials on the mid- and long-term survival of implants supporting single crowns and fixed partial dentures. Hand and MEDLINE searches were performed to identify relevant literature for single crowns (SC) and fixed partial dentures (FPD). Further inclusion criteria were a mean follow-up period of at least 3 years, the inclusion of at least 10 patients in a relevant study cohort, and a clear description of prosthesis type and prosthetic material. A total of 63 studies for the SC group and 11 studies for the FPD group were included. Full arch restorations were not included. The materials utilised in the SC group were metal-ceramic (precious and non-precious), lithium-disilicate, veneered zirconia, veneered alumina, and nanoceramics. The materials used in the FPD group were metal-ceramic (precious), veneered titanium, metal-resin (precious), and veneered zirconia. No significant impact on the prosthetic material relating to mid- or long-term implant survival was identified. Furthermore, there were no statistically significant differences between the survival rates of the dental prostheses made from different materials (SC and FPD group). Single crowns made of nanoceramics showed a higher risk for decementation relative to other materials (0.80, 95% CI [0.67; 0.89]; P prosthetic material selection has no influence on mid- and long-term survival of implants restored with single crowns and fixed partial dentures. Similarly, the prosthetic material seems to have no significant impact on prosthetic survival rates. Further research is required to provide more evidence regarding the impact of the prosthetic material on long-term outcome. Conflict-of-interest statement: The authors declare that they have no conflict of interest.

  8. Influence of the effectiveness of raw materials on the reliability of thermoelectric cooling devices. Part I: single-stage TEDs

    Directory of Open Access Journals (Sweden)

    Zaikov V. P.

    2015-02-01

    Full Text Available Increase of the reliability of information systems depends on the reliability improvement of their component elements, including cooling devices, providing efficiency of thermally loaded components. Thermoelectric devices based on the Peltier effect have significant advantages compared with air and liquid systems for thermal modes of the radio-electronic equipment. This happens due to the absence of moving parts, which account for the failure rate. The article presents research results on how thermoelectric efficiency modules affect the failure rate and the probability of non-failure operation in the range of working temperature of thermoelectric coolers. The authors investigate a model of relative failure rate and the probability of failure-free operation single-stage thermoelectric devices depending on the main relevant parameters: the operating current flowing through the thermocouple and resistance, temperature changes, the magnitude of the heat load and the number of elements in the module. It is shown that the increase in the thermoelectric efficiency of the primary material for a variety of thermocouple temperature changes causes the following: maximum temperature difference increases by 18%; the number of elements in the module decreases; cooling coefficient increases; failure rate reduces and the probability of non-failure operation of thermoelectric cooling device increases. Material efficiency increase by 1% allows reducing failure rate by 2,6—4,3% in maximum refrigeration capacity mode and by 4,2—5,0% in minimal failure rate mode when temperature difference changes in the range of 40—60 K. Thus, the increase in the thermoelectric efficiency of initial materials of thermocouples can significantly reduce the failure rate and increase the probability of failure of thermoelectric coolers depending on the temperature difference and the current operating mode.

  9. Impact of diabetes mellitus on worsening of the left ventricular ejection fraction in exercise-gated 201Tl myocardial single photon emission computed tomography in patients with coronary artery disease

    International Nuclear Information System (INIS)

    Yamagishi, Hiroyuki; Yoshiyama, Minoru; Shirai, Naoya; Akioka, Kaname; Takeuchi, Kazuhide; Yoshikawa, Junichi

    2003-01-01

    It remains uncertain whether factors other than the severity of coronary artery disease (CAD) are associated with the worsening of the left ventricular ejection fraction (LVEF) by exercise. In the present study the impact of coronary risk factors on the worsening of LVEF by exercise was investigated in 391 patients with known or suspected CAD using exercise-gated 201 Tl scanning to calculate the LVEF. Significant worsening of the LVEF by exercise was defined as >4.7% (mean plus 1 SD of the value in 116 patients without CAD). Multivariate analysis revealed that diabetes mellitus (DM) was an independent risk factor for the worsening of LVEF by exercise in patients with multivessel (2- or 3-vessel) CAD with an odds ratio (95% confidence interval) of 2.2 (1.1-4.5, p=0.037). In 157 patients with 2- or 3-vessel CAD, 20 (23.5%) of 85 nondiabetic patients and 31 (43.1%, p=0.009 vs nondiabetic patients) of 72 diabetic patients showed significant worsening of LVEF by exercise. In patients with 2- or 3-vessel CAD, there was no significant difference in Gensini score or reversibility of perfusion defects between nondiabetic and diabetic patients. Thus, DM is a risk factor for worsening LVEF by exercise in addition to the severity of CAD. (author)

  10. Modal gating of muscle nicotinic acetylcholine receptors

    Science.gov (United States)

    Vij, Ridhima

    Many ion channels exhibit multiple patterns of kinetic activity in single-channel currents. This behavior is rare in WT mouse muscle nicotinic acetylcholine receptors (AChRs), where A2C↔A2O gating events are well-described by single exponentials. Also, single-channel open probability (PO) is essentially homogeneous at a given agonist concentration in the WT receptors. Here I report that perturbations of almost all the residues in loop C (alpha188-alpha199, at the agonist binding site) generate heterogeneity in PO ('modes'). Such unsettled activity was apparent with an alanine substitution at all positions in loop C (except alphaY190 and alphaY198) and with different side chain substitutions at alphaP197 for both adult- and fetal-type AChRs. I used single channel electrophysiology along with site-directed mutagenesis to study modal gating in AChRs consequent to mutations/deletions in loop C. The multiple patterns of kinetic activity arose from the difference in agonist affinity rather than in intrinsic AChR gating. Out of the four different agonists used to study the modal behavior, acetylcholine (ACh) showed a higher degree of kinetic heterogeneity compared to others. The time constant for switching between modes was long (~mins), suggesting that they arise from alternative, stable protein conformations. By studying AChRs having only 1 functional binding site, I attempted to find the source of the affinity difference, which was traced mainly to the alphadelta agonist site. Affinity at the neurotransmitter binding site is mainly determined by a core of five aromatic residues (alphaY93, alphaW149, alphaY190, alphaY198 and deltaW57). Phenylalanine substitutions at all aromatic residues except alphaY93 resulted in elimination of modes. Modes were also eliminated by alanine mutation at deltaW57 on the complementary side but not at other aromatics. Also, by substituting four gamma subunit residues into the delta subunit on the complementary beta sheet, I found that

  11. New opening hours of the gates

    CERN Multimedia

    GS Department

    2009-01-01

    Please note the new opening hours of the gates as well as the intersites tunnel from the 19 May 2009: GATE A 7h - 19h GATE B 24h/24 GATE C 7h - 9h\t17h - 19h GATE D 8h - 12h\t13h - 16h GATE E 7h - 9h\t17h - 19h Prévessin 24h/24 The intersites tunnel will be opened from 7h30 to 18h non stop. GS-SEM Group Infrastructure and General Services Department

  12. Gating System Design for Casting thin Aluminium Alloy (Al-Si Plates

    Directory of Open Access Journals (Sweden)

    Victor ANJO

    2013-11-01

    Full Text Available The main problems caused by improper gating are entrained aluminium oxide films, cuts and washes, low casting yield and entrapped gas. This study describes the design of a gating system to produce thin Aluminium cast alloy plates of different sizes and thicknesses of 4mm, 6mm, 8mm, and 10mm using the non-pressurized gating with ratio of 1:4:4 and green sand moulding technique. The gating design was based on the laws of fluid mechanics and empirical rules of gating for non ferrous metals. The equipments used for this experiment includes; a coal fired crucible furnace and an X-Ray machine. Materials used include; silica sand, clay, wood, glue and Aluminium alloy scraps. The experimental procedure involved: the gating design calculations, construction of wooden pattern and gating; using the wooden pattern and gating to produce the mould cavities and gating; melting, melt treatment and pouring of melt in the sand mould to produce the casting. The plate castings after removal from mould were visually examined for surface defects and after fettling and cleaning X-Ray radiography was used to find the internal soundness of the castings. From the results obtained in the experiment, it was found that there were no internal defects and quality castings were produced.

  13. Ferritin-Templated Quantum-Dots for Quantum Logic Gates

    Science.gov (United States)

    Choi, Sang H.; Kim, Jae-Woo; Chu, Sang-Hyon; Park, Yeonjoon; King, Glen C.; Lillehei, Peter T.; Kim, Seon-Jeong; Elliott, James R.

    2005-01-01

    Quantum logic gates (QLGs) or other logic systems are based on quantum-dots (QD) with a stringent requirement of size uniformity. The QD are widely known building units for QLGs. The size control of QD is a critical issue in quantum-dot fabrication. The work presented here offers a new method to develop quantum-dots using a bio-template, called ferritin, that ensures QD production in uniform size of nano-scale proportion. The bio-template for uniform yield of QD is based on a ferritin protein that allows reconstitution of core material through the reduction and chelation processes. One of the biggest challenges for developing QLG is the requirement of ordered and uniform size of QD for arrays on a substrate with nanometer precision. The QD development by bio-template includes the electrochemical/chemical reconsitution of ferritins with different core materials, such as iron, cobalt, manganese, platinum, and nickel. The other bio-template method used in our laboratory is dendrimers, precisely defined chemical structures. With ferritin-templated QD, we fabricated the heptagonshaped patterned array via direct nano manipulation of the ferritin molecules with a tip of atomic force microscope (AFM). We also designed various nanofabrication methods of QD arrays using a wide range manipulation techniques. The precise control of the ferritin-templated QD for a patterned arrangement are offered by various methods, such as a site-specific immobilization of thiolated ferritins through local oxidation using the AFM tip, ferritin arrays induced by gold nanoparticle manipulation, thiolated ferritin positioning by shaving method, etc. In the signal measurements, the current-voltage curve is obtained by measuring the current through the ferritin, between the tip and the substrate for potential sweeping or at constant potential. The measured resistance near zero bias was 1.8 teraohm for single holoferritin and 5.7 teraohm for single apoferritin, respectively.

  14. Respiratory gating in cardiac PET

    DEFF Research Database (Denmark)

    Lassen, Martin Lyngby; Rasmussen, Thomas; Christensen, Thomas E

    2017-01-01

    BACKGROUND: Respiratory motion due to breathing during cardiac positron emission tomography (PET) results in spatial blurring and erroneous tracer quantification. Respiratory gating might represent a solution by dividing the PET coincidence dataset into smaller respiratory phase subsets. The aim...... stress (82)RB-PET. Respiratory rates and depths were measured by a respiratory gating system in addition to registering actual respiratory rates. Patients undergoing adenosine stress showed a decrease in measured respiratory rate from initial to later scan phase measurements [12.4 (±5.7) vs 5.6 (±4.......7) min(-1), P PET...

  15. Gate-tunable Phase Transitions in 1T-TaS$_2$

    OpenAIRE

    Yu, Yijun; Yang, Fangyuan; Lu, Xiu Fang; Yan, Ya Jun; Cho, Y. H.; Ma, Liguo; Niu, Xiaohai; Kim, Sejoong; Son, Young-Woo; Feng, Donglai; Li, Shiyan; Cheong, Sang-Wook; Chen, Xian Hui; Zhang, Yuanbo

    2014-01-01

    The ability to tune material properties using gate electric field is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as gate-electric-field induced superconductivity and metal-insulator transition. Here we describe an ionic field-effect transistor (termed "iFET"), which uses gate-controlled lithium ion intercalation to modulate the material property of layered atomic crystal 1T-TaS$_2$. The extreme charge doping ...

  16. Post hoc interlaboratory comparison of single particle ICP-MS size measurements of NIST gold nanoparticle reference materials.

    Science.gov (United States)

    Montoro Bustos, Antonio R; Petersen, Elijah J; Possolo, Antonio; Winchester, Michael R

    2015-09-01

    Single particle inductively coupled plasma-mass spectrometry (spICP-MS) is an emerging technique that enables simultaneous measurement of nanoparticle size and number quantification of metal-containing nanoparticles at realistic environmental exposure concentrations. Such measurements are needed to understand the potential environmental and human health risks of nanoparticles. Before spICP-MS can be considered a mature methodology, additional work is needed to standardize this technique including an assessment of the reliability and variability of size distribution measurements and the transferability of the technique among laboratories. This paper presents the first post hoc interlaboratory comparison study of the spICP-MS technique. Measurement results provided by six expert laboratories for two National Institute of Standards and Technology (NIST) gold nanoparticle reference materials (RM 8012 and RM 8013) were employed. The general agreement in particle size between spICP-MS measurements and measurements by six reference techniques demonstrates the reliability of spICP-MS and validates its sizing capability. However, the precision of the spICP-MS measurement was better for the larger 60 nm gold nanoparticles and evaluation of spICP-MS precision indicates substantial variability among laboratories, with lower variability between operators within laboratories. Global particle number concentration and Au mass concentration recovery were quantitative for RM 8013 but significantly lower and with a greater variability for RM 8012. Statistical analysis did not suggest an optimal dwell time, because this parameter did not significantly affect either the measured mean particle size or the ability to count nanoparticles. Finally, the spICP-MS data were often best fit with several single non-Gaussian distributions or mixtures of Gaussian distributions, rather than the more frequently used normal or log-normal distributions.

  17. In Vivo skin hydration and anti-erythema effects of Aloe vera, Aloe ferox and Aloe marlothii gel materials after single and multiple applications

    Science.gov (United States)

    Fox, Lizelle T.; du Plessis, Jeanetta; Gerber, Minja; van Zyl, Sterna; Boneschans, Banie; Hamman, Josias H.

    2014-01-01

    Objective: To investigate the skin hydrating and anti-erythema activity of gel materials from Aloe marlothii A. Berger and A. ferox Mill. in comparison to that of Aloe barbadensis Miller (Aloe vera) in healthy human volunteers. Materials and Methods: Aqueous solutions of the polisaccharidic fractions of the selected aloe leaf gel materials were applied to the volar forearm skin of female subjects. The hydration effect of the aloe gel materials were measured with a Corneometer® CM 825, Visioscan® VC 98 and Cutometer® dual MPA 580 after single and multiple applications. The Mexameter® MX 18 was used to determine the anti-erythema effects of the aloe material solutions on irritated skin areas. Results: The A. vera and A. marlothii gel materials hydrated the skin after a single application, whereas the A. ferox gel material showed dehydration effects compared to the placebo. After multiple applications all the aloe materials exhibited dehydration effects on the skin. Mexameter® readings showed that A. vera and A. ferox have anti-erythema activity similar to that of the positive control group (i.e. hydrocortisone gel) after 6 days of treatment. Conclusion: The polysaccharide component of the gel materials from selected aloe species has a dehydrating effect on the skin after multiple applications. Both A. vera and A. ferox gel materials showed potential to reduce erythema on the skin similar to that of hydrocortisone gel. PMID:24991119

  18. Fast quantum logic gates with trapped-ion qubits

    Science.gov (United States)

    Schäfer, V. M.; Ballance, C. J.; Thirumalai, K.; Stephenson, L. J.; Ballance, T. G.; Steane, A. M.; Lucas, D. M.

    2018-03-01

    Quantum bits (qubits) based on individual trapped atomic ions are a promising technology for building a quantum computer. The elementary operations necessary to do so have been achieved with the required precision for some error-correction schemes. However, the essential two-qubit logic gate that is used to generate quantum entanglement has hitherto always been performed in an adiabatic regime (in which the gate is slow compared with the characteristic motional frequencies of the ions in the trap), resulting in logic speeds of the order of 10 kilohertz. There have been numerous proposals of methods for performing gates faster than this natural ‘speed limit’ of the trap. Here we implement one such method, which uses amplitude-shaped laser pulses to drive the motion of the ions along trajectories designed so that the gate operation is insensitive to the optical phase of the pulses. This enables fast (megahertz-rate) quantum logic that is robust to fluctuations in the optical phase, which would otherwise be an important source of experimental error. We demonstrate entanglement generation for gate times as short as 480 nanoseconds—less than a single oscillation period of an ion in the trap and eight orders of magnitude shorter than the memory coherence time measured in similar calcium-43 hyperfine qubits. The power of the method is most evident at intermediate timescales, at which it yields a gate error more than ten times lower than can be attained using conventional techniques; for example, we achieve a 1.6-microsecond-duration gate with a fidelity of 99.8 per cent. Faster and higher-fidelity gates are possible at the cost of greater laser intensity. The method requires only a single amplitude-shaped pulse and one pair of beams derived from a continuous-wave laser. It offers the prospect of combining the unrivalled coherence properties, operation fidelities and optical connectivity of trapped-ion qubits with the submicrosecond logic speeds that are usually

  19. Trapped-ion quantum logic gates based on oscillating magnetic fields

    Science.gov (United States)

    Ospelkaus, Christian; Langer, Christopher E.; Amini, Jason M.; Brown, Kenton R.; Leibfried, Dietrich; Wineland, David J.

    2009-05-01

    Oscillating magnetic fields and field gradients can be used to implement single-qubit rotations and entangling multiqubit quantum gates for trapped-ion quantum information processing. With fields generated by currents in microfabricated surface-electrode traps, it should be possible to achieve gate speeds that are comparable to those of optically induced gates for realistic distances between the ions and the electrode surface. Magnetic-field-mediated gates have the potential to significantly reduce the overhead in laser-beam control and motional-state initialization compared to current QIP experiments with trapped ions and will eliminate spontaneous scattering decoherence, a fundamental source of decoherence in laser-mediated gates. A potentially beneficial environment for the implementation of such schemes is a cryogenic ion trap, because small length scale traps with low motional heating rates can be realized. A cryogenic ion trap experiment is currently under construction at NIST.

  20. Enhancement of minority carrier injection in ambipolar carbon nanotube transistors using double-gate structures

    Energy Technology Data Exchange (ETDEWEB)

    Kim, Bongjun; Liang, Kelly; Dodabalapur, Ananth, E-mail: ananth.dodabalapur@engr.utexas.edu [Microelectronics Research Center, The University of Texas at Austin, Austin, Texas 78758 (United States); Geier, Michael L.; Hersam, Mark C. [Department of Materials Science and Engineering and Department of Chemistry, Northwestern University, Evanston, Illinois 60208 (United States)

    2016-07-11

    We show that double-gate ambipolar thin-film transistors can be operated to enhance minority carrier injection. The two gate potentials need to be significantly different for enhanced injection to be observed. This enhancement is highly beneficial in devices such as light-emitting transistors where balanced electron and hole injections lead to optimal performance. With ambipolar single-walled carbon nanotube semiconductors, we demonstrate that higher ambipolar currents are attained at lower source-drain voltages, which is desired for portable electronic applications, by employing double-gate structures. In addition, when the two gates are held at the same potential, the expected advantages of the double-gate transistors such as enhanced on-current are also observed.

  1. Continuum dislocation-density based models for the dynamic shock response of single-crystal and polycrystalline materials

    Science.gov (United States)

    Luscher, Darby

    2017-06-01

    The dynamic thermomechanical responses of polycrystalline materials under shock loading are often dominated by the interaction of defects and interfaces. For example, polymer-bonded explosives (PBX) can initiate under weak shock impacts whose energy, if distributed homogeneously throughout the material, translates to temperature increases that are insufficient to drive the rapid chemistry observed. In such cases, heterogeneous thermomechanical interactions at the mesoscale (i.e. between single-crystal and macroscale) lead to the formation of localized hot spots. Within metals, a prescribed deformation associated with a shock wave may be accommodated by crystallographic slip, provided a sufficient population of mobile dislocations is available. However, if the deformation rate is large enough, there may be an insufficient number of freely mobile dislocations. In these cases, additional dislocations may be nucleated, or alternate mechanisms (e.g. twinning, damage) activated in order to accommodate the deformation. Direct numerical simulation at the mesoscale offers insight into these physical processes that can be invaluable to the development of macroscale constitutive theories, if the mesoscale models adequately represent the anisotropic nonlinear thermomechanical response of individual crystals and their interfaces. This talk will briefly outline a continuum mesoscale modeling framework founded upon local and nonlocal variations of dislocation-density based crystal plasticity theory. The nonlocal theory couples continuum dislocation transport with the local theory. In the latter, dislocation transport is modeled by enforcing dislocation conservation at a slip-system level through the solution of advection-diffusion equations. The configuration of geometrically necessary dislocation density gives rise to a back-stress that inhibits or accentuates the flow of dislocations. Development of the local theory and application to modeling the explosive molecular crystal

  2. Toxicokinetics and toxicological effects of single oral dose of fumonisin B1 containing Fusarium verticillioides culture material in weaned piglets.

    Science.gov (United States)

    Dilkin, P; Direito, G; Simas, M M S; Mallmann, C A; Corrêa, B

    2010-05-14

    Toxicokinetics and the toxicological effects of culture material containing fumonisin B(1) (FB(1)) were studied in male weaned piglets by clinical, pathological, biochemical and sphingolipid analyses. The animals received a single oral dose of 5 mg FB(1)/kg of body weight, obtained from Fusarium verticillioides culture material. FB(1) was detected by HPLC in plasma collected at 1-h intervals up to 6h and at 12-h intervals up to 96 h. FB(1) eliminated in feces and urine was quantified over a 96-h period and in liver samples collected 96 h post-intoxication. Blood samples were obtained at the beginning and end of the experiment to determine serum enzyme activity, total bilirubin, cholesterol, sphinganine (Sa), sphingosine (So) and the Sa/So ratio. FB(1) was detected in plasma between 30 min and 36 h after administration. The highest concentration of FB(1) was observed after 2 h, with a mean concentration of 282 microg/ml. Only 0.93% of the total FB(1) was detected in urine between 75 min and 41 h after administration, the highest mean concentration (561 microg/ml) was observed during the interval after 8 at 24 h. Approximately 76.5% of FB(1) was detected in feces eliminated between 8 and 84 h after administration, with the highest levels observed between 8 and 24 h. Considering the biochemical parameters, a significant increase only occurred in cholesterol, alkaline phosphatase and aspartate aminotransferase activities. In plasma and urine, the highest Sa and Sa/So ratios were obtained at 12 and 48 h, respectively. Copyright 2010 Elsevier Ireland Ltd. All rights reserved.

  3. Single step hydrothermal synthesis of carbon nanodot decorated V2O5 nanobelts as hybrid conducting material for supercapacitor application

    Science.gov (United States)

    Narayanan, Remya

    2017-09-01

    Carbon nanodot (C-dot) decorated V2O5 (C-dot@V2O5) nanobelts are synthesized by single step, low cost hydrothermal route at low temperature by using V2O5 and glucose as precursors. We have not added any extra organic solvents or surfactants which are commonly used for the preparation of different nanostructures of V2O5. Electron microscopy analyses demonstrate that C-dot is entrapped inside V2O5 nanobelts which in turn enhance the conductivity and ion propagation property of this composite material. The C-dot@V2O5 nanobelts exhibit an excellent three electrode electrochemical performance in 1 M Na2SO4 and which showed a specific capacitance of 270 F g-1 at 1 A g-1, which is 4.5 times higher than the pristine V2O5 electrode. The electrochemical energy storage capacity of this hybrid is investigated towards solid state supercapacitor application also for the first time by employing electrophoretically deposited C-dot as the counter electrode and Li based gel as the electrolyte. The hybrid material delivers an energy density of 60 W h kg-1 and a reasonably high power density of 4.1 kW kg-1 at 5 A g-1 and good cycling stability and capacitance retention of about 87% was observed even after 5000 cycles. Above mentioned results clearly show that C-dot embedded hybrid, nanostructured transition metal oxides has great potential towards fabrication of electrodes for energy storage devices.

  4. Spiral-type heteropolyhedral coordination network based on single-crystal LiSrPO4: implications for luminescent materials.

    Science.gov (United States)

    Lin, Chun Che; Shen, Chin-Chang; Liu, Ru-Shi

    2013-11-04

    Novel structures of luminescent materials, which are used as light sources for next-generation illumination, are continuously being improved for use in white-light-emitting diodes. Activator-doped known structures are reported as habitual down-conversion phosphors in solid-state lightings and displays. Consequently, the intrinsic qualities of the existent compounds produce deficiencies that limit their applications. Herein we report a spiral-network single-crystal orthophosphate (LiSrPO4) prepared in a platinum crucible with LiCl flux through crystal-growth reactions of SrCl2 and Li3PO4 in air. It crystallizes in a hexagonal system with a=5.0040(2) and c=24.6320(16) Å, V=534.15(5) Å(3), and Z=6 in the space group P6(5). The unit cell is comprised of LiO4 and PO4 tetrahedrons that form a three-dimensional LiPO4(2-) anionic framework with a helical channel structure along the c axis in which the Sr(2+) cation is accommodated. The optical band gap of this composition is about 3.65 eV, as determined by using UV/Vis absorption and diffuse reflection spectra. We used the crystal-growth method to synthesize blue- and red-emitting crystals that exhibited pure color, low reabsorption, a large Stokes shift, and efficient conversion of ultraviolet excitation light into visible light. Emphasis was placed on the development of gratifying structure-related properties of rare-earth luminescent materials and their applications. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Gating Technology for Vertically Parted Green Sand Moulds

    DEFF Research Database (Denmark)

    Larsen, Per

    Gating technology for vertically parted green sand moulds. Literature study of different ways of designing gating systems.......Gating technology for vertically parted green sand moulds. Literature study of different ways of designing gating systems....

  6. Two-dimensional threshold voltage model and design considerations for gate electrode work function engineered recessed channel nanoscale MOSFET: I

    International Nuclear Information System (INIS)

    Chaujar, Rishu; Kaur, Ravneet; Gupta, Mridula; Gupta, R S; Saxena, Manoj

    2009-01-01

    This paper discusses a threshold voltage model for novel device structure: gate electrode work function engineered recessed channel (GEWE-RC) nanoscale MOSFET, which combines the advantages of both RC and GEWE structures. In part I, the model accurately predicts (a) surface potential, (b) threshold voltage and (c) sub-threshold slope for single material gate recessed channel (SMG-RC) and GEWE-RC structures. Part II focuses on the development of compact analytical drain current model taking into account the transition regimes from sub-threshold to saturation. Furthermore, the drain conductance evaluation has also been obtained, reflecting relevance of the proposed device for analogue design. The analysis takes into account the effect of gate length and groove depth in order to develop a compact model suitable for device design. The analytical results predicted by the model confirm well with the simulated results. Results in part I also provide valuable design insights in the performance of nanoscale GEWE-RC MOSFET with optimum threshold voltage and negative junction depth (NJD), and hence serves as a tool to optimize important device and technological parameters for 40 nm technology

  7. Dynamic gating window for compensation of baseline shift in respiratory-gated radiation therapy

    International Nuclear Information System (INIS)

    Pepin, Eric W.; Wu Huanmei; Shirato, Hiroki

    2011-01-01

    Purpose: To analyze and evaluate the necessity and use of dynamic gating techniques for compensation of baseline shift during respiratory-gated radiation therapy of lung tumors. Methods: Motion tracking data from 30 lung tumors over 592 treatment fractions were analyzed for baseline shift. The finite state model (FSM) was used to identify the end-of-exhale (EOE) breathing phase throughout each treatment fraction. Using duty cycle as an evaluation metric, several methods of end-of-exhale dynamic gating were compared: An a posteriori ideal gating window, a predictive trend-line-based gating window, and a predictive weighted point-based gating window. These methods were evaluated for each of several gating window types: Superior/inferior (SI) gating, anterior/posterior beam, lateral beam, and 3D gating. Results: In the absence of dynamic gating techniques, SI gating gave a 39.6% duty cycle. The ideal SI gating window yielded a 41.5% duty cycle. The weight-based method of dynamic SI gating yielded a duty cycle of 36.2%. The trend-line-based method yielded a duty cycle of 34.0%. Conclusions: Dynamic gating was not broadly beneficial due to a breakdown of the FSM's ability to identify the EOE phase. When the EOE phase was well defined, dynamic gating showed an improvement over static-window gating.

  8. Bill Gates eyes healthcare market.

    Science.gov (United States)

    Dunbar, C

    1995-02-01

    The entrepreneurial spirit is still top in Bill Gates' mind as he look toward healthcare and other growth industries. Microsoft's CEO has not intention of going the way of other large technology companies that became obsolete before they could compete today.

  9. Phase change material for thermotherapy of Buruli ulcer: a prospective observational single centre proof-of-principle trial.

    Directory of Open Access Journals (Sweden)

    Thomas Junghanss

    Full Text Available BACKGROUND: Buruli ulcer (BU is an infection of the subcutaneous tissue leading to chronic necrotizing skin ulcers. The causative pathogen, Mycobacterium ulcerans, grows best at 30 degrees C-33 degrees C and not above 37 degrees C. We explored the safety, tolerability and efficacy of phase change material (PCM, a novel heat application system for thermotherapy of BU. METHODOLOGY/PRINCIPAL FINDINGS: In a prospective observational single centre proof-of-principle trial in Ayos/Cameroon, six laboratory reconfirmed patients with ulcerative Buruli lesions received 28-31 (ulcers 2 cm days of thermotherapy with the PCM sodium acetate trihydrate as heat application system. This PCM is widely used in commercial pocket heat pads, it is easy to apply, rechargeable in hot water, non-toxic and non-hazardous to the environment. All patients enrolled in the trial completed treatment. Being completely mobile during the well-tolerated heat application, acceptability of the PCM bandages was very high. In patients with smaller ulcers, wounds healed completely without further intervention. Patients with large defects had skin grafting after successful heat treatment. Heat treatment was not associated with marked increases in local inflammation or the development of ectopic lymphoid tissue. One and a half years after completion of treatment, all patients are relapse-free. CONCLUSIONS/SIGNIFICANCE: Our reusable PCM-based heat application device appears perfectly suited to treat BU in endemic countries with limited resources and infrastructure. TRIAL REGISTRATION: Controlled-Trials.com ISRCTN88392614.

  10. An Air-Stable DPP-thieno-TTF Copolymer for Single-Material Solar Cell Devices and Field Effect Transistors.

    Science.gov (United States)

    Arumugam, Sasikumar; Cortizo-Lacalle, Diego; Rossbauer, Stephan; Hunter, Simon; Kanibolotsky, Alexander L; Inigo, Anto R; Lane, Paul A; Anthopoulos, Thomas D; Skabara, Peter J

    2015-12-30

    Following an approach developed in our group to incorporate tetrathiafulvalene (TTF) units into conjugated polymeric systems, we have studied a low band gap polymer incorporating TTF as a donor component. This polymer is based on a fused thieno-TTF unit that enables the direct incorporation of the TTF unit into the polymer, and a second comonomer based on the diketopyrrolopyrrole (DPP) molecule. These units represent a donor-acceptor copolymer system, p(DPP-TTF), showing strong absorption in the UV-visible region of the spectrum. An optimized p(DPP-TTF) polymer organic field effect transistor and a single material organic solar cell device showed excellent performance with a hole mobility of up to 5.3 × 10(-2) cm(2)/(V s) and a power conversion efficiency (PCE) of 0.3%, respectively. Bulk heterojunction organic photovoltaic devices of p(DPP-TTF) blended with phenyl-C71-butyric acid methyl ester (PC71BM) exhibited a PCE of 1.8%.

  11. Single-walled carbon nanotubes covalently functionalized with polytyrosine: A new material for the development of NADH-based biosensors.

    Science.gov (United States)

    Eguílaz, Marcos; Gutierrez, Fabiana; González-Domínguez, Jose Miguel; Martínez, María T; Rivas, Gustavo

    2016-12-15

    We report for the first time the use of single-walled carbon nanotubes (SWCNT) covalently functionalized with polytyrosine (Polytyr) (SWCNT-Polytyr) as a new electrode material for the development of nicotinamide adenine dinucleotide (NADH)-based biosensors. The oxidation of glassy carbon electrodes (GCE) modified with SWCNT-Polytyr at potentials high enough to oxidize the tyrosine residues have allowed the electrooxidation of NADH at low potentials due to the catalytic activity of the quinones generated from the primary oxidation of tyrosine without any additional redox mediator. The amperometric detection of NADH at 0.200V showed a sensitivity of (217±3)µAmM(-1)cm(-2) and a detection limit of 7.9nM. The excellent electrocatalytic activity of SWCNT-Polytyr towards NADH oxidation has also made possible the development of a sensitive ethanol biosensor through the immobilization of alcohol dehydrogenase (ADH) via Nafion entrapment, with excellent analytical characteristics (sensitivity of (5.8±0.1)µAmM(-1)cm(-2), detection limit of 0.67µM) and very successful application for the quantification of ethanol in different commercial beverages. Copyright © 2016 Elsevier B.V. All rights reserved.

  12. Gate induced drain leakage reduction with analysis of gate fringing field effect on high-κ/metal gate CMOS technology

    Science.gov (United States)

    Jang, Esan; Shin, Sunhae; Jung, Jae Won; Rok Kim, Kyung

    2015-06-01

    We suggest the optimum permittivity for a high-κ/metal gate (HKMG) CMOS structure based on the trade-off characteristics between the fringing field induced barrier lowering (FIBL) and gate induced drain leakage (GIDL). By adopting the high-κ gate dielectric, the GIDL from the band-to-band tunneling at the interface of gate and lightly doped drain (LDD) is suppressed with wide tunneling width owing to the enhanced fringing field, while the FIBL effects is degenerated as the previous reports. These two effects from the gate fringing field are studied extensively to manage the leakage current of HKMG for low power applications.

  13. ``Gate-to-gate`` BJT obtained from the double-gate input JFET to reset charge preamplifiers

    Energy Technology Data Exchange (ETDEWEB)

    Fazzi, A. [Politecnico di Milano (Italy). Dipartimento di Ingegneria Nucleare; Rehak, P. [Brookhaven National Laboratory, Upton, NY 11973 (United States)

    1996-08-01

    A novel charge restoration mechanism to reset charge sensitive preamplifiers is presented. The ``gate-to-gate`` Bipolar Junction Transistor transversal to the input JFET with independent top and bottom gates is exploited as a ``reset transistor`` embodied in the preamplifier input device. The p-n junction between the bottom gate and the channel is forward-biased by a proper feedback loop supplying the necessary restoration current to the input node capacitance through the top gate-channel reversed-biased junction. The continuous reset mode is here analysed with reference to the DC stability, the pulse response and the noise behaviour. Experimental results are reported. (orig.).

  14. Simultaneous ECG-gated PET imaging of multiple mice

    International Nuclear Information System (INIS)

    Seidel, Jurgen; Bernardo, Marcelino L.; Wong, Karen J.; Xu, Biying; Williams, Mark R.; Kuo, Frank; Jagoda, Elaine M.; Basuli, Falguni; Li, Changhui; Griffiths, Gary L.

    2014-01-01

    Introduction: We describe and illustrate a method for creating ECG-gated PET images of the heart for each of several mice imaged at the same time. The method is intended to increase “throughput” in PET research studies of cardiac dynamics or to obtain information derived from such studies, e.g. tracer concentration in end-diastolic left ventricular blood. Methods: An imaging bed with provisions for warming, anesthetic delivery, etc., was fabricated by 3D printing to allow simultaneous PET imaging of two side-by-side mice. After electrode attachment, tracer injection and placement of the animals in the scanner field of view, ECG signals from each animal were continuously analyzed and independent trigger markers generated whenever an R-wave was detected in each signal. PET image data were acquired in “list” mode and these trigger markers were inserted into this list along with the image data. Since each mouse is in a different spatial location in the FOV, sorting of these data using trigger markers first from one animal and then the other yields two independent and correctly formed ECG-gated image sequences that reflect the dynamical properties of the heart during an “average” cardiac cycle. Results: The described method yields two independent ECG-gated image sequences that exhibit the expected properties in each animal, e.g. variation of the ventricular cavity volumes from maximum to minimum and back during the cardiac cycle in the processed animal with little or no variation in these volumes during the cardiac cycle in the unprocessed animal. Conclusion: ECG-gated image sequences for each of several animals can be created from a single list mode data collection using the described method. In principle, this method can be extended to more than two mice (or other animals) and to other forms of physiological gating, e.g. respiratory gating, when several subjects are imaged at the same time

  15. Design of a recessed-gate GaN-based MOSFET using a dual gate dielectric for high-power applications

    International Nuclear Information System (INIS)

    Yoon, Young Jun; Kang, Hee Sung; Seo, Jae Hwa; Kim, Young Jo; Bae, Jin Hyuk; Lee, Jung Hee; Kang, In Man; Cho, Eou Sik; Cho, Seong Jae

    2014-01-01

    We have investigated gallium-nitride (GaN)-based metal-oxide-semiconductor field-effect transistors(MOSFETs) having a recessed-gate structure for high-power applications. Recessed-gate GaN-based MOSFETs have been designed with a dual high-k dielectric structure to overcome low current drivability. Compared to recessed-gate GaN-based MOSFETs having a single gate dielectric with the same oxide thickness, recessed-gate GaN-based MOSFETs having a dual high-k dielectric composed of Al 2 O 3 and HfO 2 have achieved a high drain current (I D ) and transconductance (g m ) due to the high dielectric constant of HfO 2 . Also, because the dual high-k dielectric forms a high electron density in the channel layer with outstanding gate control capability, low channel resistances (R ch ) have obtained. In addition, we have studied the effect of the length between the gate and the drain (L gd ) on the on-resistance (R on ) to minimize the R on that is associated with power consumption and switching performance. Also, the electric field distribution of a device having a dual high-k dielectric has been examined with a field plate structure for high drive voltage. The proposed device was confirmed to be a remarkable candidate for switching devices in high-power applications.

  16. Gate Simulation of a Gamma Camera

    International Nuclear Information System (INIS)

    Abidi, Sana; Mlaouhi, Zohra

    2008-01-01

    Medical imaging is a very important diagnostic because it allows for an exploration of the internal human body. The nuclear imaging is an imaging technique used in the nuclear medicine. It is to determine the distribution in the body of a radiotracers by detecting the radiation it emits using a detection device. Two methods are commonly used: Single Photon Emission Computed Tomography (SPECT) and the Positrons Emission Tomography (PET). In this work we are interested on modelling of a gamma camera. This simulation is based on Monte-Carlo language and in particular Gate simulator (Geant4 Application Tomographic Emission). We have simulated a clinical gamma camera called GAEDE (GKS-1) and then we validate these simulations by experiments. The purpose of this work is to monitor the performance of these gamma camera and the optimization of the detector performance and the the improvement of the images quality. (Author)

  17. Chemical sensitivity of Mo gate Mos capacitors

    Energy Technology Data Exchange (ETDEWEB)

    Lombardi, R.M.; Aragon, R. [Laboratorio de Peliculas delgadas, Facultad de Ingenieria, Paseo Colon 850, 1063, Buenos Aires (Argentina)

    2006-07-01

    Mo gate Mos capacitors exhibit a negative shift of their C-V characteristic by up to 240 mV, at 125 C, in response to 1000 ppm hydrogen, in controlled nitrogen atmospheres. The experimental methods for obtaining capacitance and conductance, as a function of polarisation voltage, as well as the relevant equivalent circuits are reviewed. The single-state interface state density, at the semiconductor-dielectric interface, decreases from 2.66 x 10{sup 11} cm{sup -2} e-v{sup -1}, in pure nitrogen, to 2.5 x 10{sup 11} cm{sup -2} e-v{sup -1} in 1000 ppm hydrogen in nitrogen mixtures, at this temperature. (Author)

  18. Quantum walks, quantum gates, and quantum computers

    International Nuclear Information System (INIS)

    Hines, Andrew P.; Stamp, P. C. E.

    2007-01-01

    The physics of quantum walks on graphs is formulated in Hamiltonian language, both for simple quantum walks and for composite walks, where extra discrete degrees of freedom live at each node of the graph. It is shown how to map between quantum walk Hamiltonians and Hamiltonians for qubit systems and quantum circuits; this is done for both single-excitation and multiexcitation encodings. Specific examples of spin chains, as well as static and dynamic systems of qubits, are mapped to quantum walks, and walks on hyperlattices and hypercubes are mapped to various gate systems. We also show how to map a quantum circuit performing the quantum Fourier transform, the key element of Shor's algorithm, to a quantum walk system doing the same. The results herein are an essential preliminary to a Hamiltonian formulation of quantum walks in which coupling to a dynamic quantum environment is included

  19. Detection of myocardial viability by means of Single Proton Emission Computed Tomography (Perfused SPECT) dual 201 Tl (rest of 15 minutes, 24 late hours and 24 hours reinjection) and gated-SPECT 99m Tc-SESTAMIBI in effort or stimulation of the coronary reserves

    International Nuclear Information System (INIS)

    Mendoza V, R.

    2004-01-01

    The objective of this work was to determine if the images of SPECT 201 TI in rest of 15 minutes, 24 late hours and Gated-SPECT 99m Tc-SESTAMIBI in effort or stimulation of coronary reservation correlate with the study of 24 hours post reinjection of 201 TI to determine the presence of having knitted viable myocardium. Material and methods: 29 patients were studied with coronary arterial illness (EAC) to who are carried out SPECT 201 TI in rest with images of 15 minutes, 24 late hours and 24 hours reinjection, by means of the administration of 201 TI to dose of 130 MBq and reinjection with 37 MBq. and Gated-SPECT 99m Tc-SESTAMIBI in effort or stimulation of coronary reservation, later to the administration of 1110 MBq. Results: 29 patients were included according to inclusion approaches and exclusion, of those which 22 (75.86%) they correspond at the masculine sex and 7 (24.13%) to the feminine one, with an average of 62.1 year-old age, 2320 segments myocardial were analysed so much it is phase post-effort as rest; they were diagnosed a total of 264 segments with heart attack, of which viability myocardium was observed in 174 segments. The statistical tests are analysis of frequencies. The non parametric test of Wilcoxon and Mann-Whitney. Conclusions: the viability myocardial at the 24 late hours and 24 hours reinjection was similar; significant difference exists between the study of 15 minutes and 24 hours reinjection, ischemic illness was also demonstrated in territories different to the heart attack area in the studies of 15 minutes, late 24 hours and 24 hours reinjection. (Author)

  20. A 3-year prospective study of implant-supported, single-tooth restorations of all-ceramic and metal-ceramic materials in patients with tooth agenesis

    DEFF Research Database (Denmark)

    Hosseini, Mandana; Worsaae, Nils; Schiødt, Morten

    2013-01-01

    OBJECTIVES: The purpose of this clinical study was to describe outcome variables of all-ceramic and metal-ceramic implant-supported, single-tooth restorations. MATERIALS AND METHODS: A total of 59 patients (mean age: 27.9 years) with tooth agenesis and treated with 98 implant-supported single...... abutment materials. The frequency of biological complications was higher at restorations with all-ceramic restorations than metal-ceramic crowns. Loss of retention, which was only observed at metal-ceramic crowns, was the most frequent technical complication, and the marginal adaptations of all-ceramic...... restoration materials were registered. After 3 years, the patient-reported outcome variables at different restoration materials were not significantly different. CONCLUSION: The biological outcomes at the zirconia and metal abutments were comparable. All-ceramic crowns demonstrated better colour match...

  1. Non-ECG-gated CT pulmonary angiography and the prediction of right ventricular dysfunction in patients suspected of pulmonary embolism

    DEFF Research Database (Denmark)

    Gutte, Henrik; Mortensen, Jann; Mørk, Mette Louise

    2017-01-01

    angiography (CTPA) could predict RVD in patients suspected of PE using ECG-gated cardiac CT angiography as reference. METHODS: Consecutive patients suspected of PE were referred to a ventilation/perfusion single-photon emission tomography (V/Q-SPECT) as first-line imaging procedure. Patients had a V/Q-SPECT/CT......, a CTPA and an ECG-gated cardiac CT angiography performed the same day. RESULTS: A total of 71 patients were available for analysis. Seventeen patients (24%) had RVD. The non-ECG-gated dimensions of left and right ventricle and the major vessels were correlated with ECG-gated cardiac dimensions. The size...

  2. Single-step preparation of TiO2/MWCNT Nanohybrid materials by laser pyrolysis and application to efficient photovoltaic energy conversion.

    Science.gov (United States)

    Wang, Jin; Lin, Yaochen; Pinault, Mathieu; Filoramo, Arianna; Fabert, Marc; Ratier, Bernard; Bouclé, Johann; Herlin-Boime, Nathalie

    2015-01-14

    This paper presents the continuous-flowand single-step synthesis of a TiO2/MWCNT (multiwall carbon nanotubes) nanohybrid material. The synthesis method allows achieving high coverage and intimate interface between the TiO2particles and MWCNTs, together with a highly homogeneous distribution of nanotubes within the oxide. Such materials used as active layer in theporous photoelectrode of solid-state dye-sensitized solar cells leads to a substantial performance improvement (20%) as compared to reference devices.

  3. Digital-circuit analysis of short-gate tunnel FETs for low-voltage applications

    International Nuclear Information System (INIS)

    Zhuge, Jing; Huang, Ru; Wang, Yangyuan; Verhulst, Anne S; Vandenberghe, William G; Dehaene, Wim; Groeseneken, Guido

    2011-01-01

    This paper investigates the potential of tunnel field-effect transistors (TFETs), with emphasis on short-gate TFETs, by simulation for low-power digital applications having a supply voltage lower than 0.5 V. A transient study shows that the tunneling current has a negligible contribution in charging and discharging the gate capacitance of TFETs. In spite of a higher resistance region in the short-gate TFET, the gate (dis)charging speed still meets low-voltage application requirements. A circuit analysis is performed on short-gate TFETs with different materials, such as Si, Ge and heterostructures in terms of voltage overshoot, delay, static power, energy consumption and energy delay product (EDP). These results are compared to MOSFET and full-gate TFET performance. It is concluded that short-gate heterostructure TFETs (Ge–source for nTFET, In 0.6 Ga 0.4 As–source for pTFET) are promising candidates to extend the supply voltage to lower than 0.5 V because they combine the advantage of a low Miller capacitance, due to the short-gate structures, and strong drive current in TFETs, due to the narrow bandgap material in the source. At a supply voltage of 0.4 V and for an EOT and channel length of 0.6 nm and 40 nm, respectively, a three-stage inverter chain based on short-gate heterostructure TFETs saves 40% energy consumption per cycle at the same delay and shows 60%–75% improvement of EDP at the same static power, compared to its full-gate counterpart. When compared to the MOSFET, better EDP can be achieved in the heterostructure TFET especially at low static power consumption

  4. A novel nanoscaled Schottky barrier based transmission gate and its digital circuit applications

    Science.gov (United States)

    Kumar, Sunil; Loan, Sajad A.; Alamoud, Abdulrahman M.

    2017-04-01

    In this work we propose and simulate a compact nanoscaled transmission gate (TG) employing a single Schottky barrier based transistor in the transmission path and a single transistor based Sajad-Sunil-Schottky (SSS) device as an inverter. Therefore, just two transistors are employed to realize a complete transmission gate which normally consumes four transistors in the conventional technology. The transistors used to realize the transmission path and the SSS inverter in the proposed TG are the double gate Schottky barrier devices, employing stacks of two metal silicides, platinum silicide (PtSi) and erbium silicide (ErSi). It has been observed that the realization of the TG gate by the proposed technology has resulted into a compact structure, with reduced component count, junctions, interconnections and regions in comparison to the conventional technology. The further focus of this work is on the application part of the proposed technology. So for the first time, the proposed technology has been used to realize various combinational circuits, like a two input AND gate, a 2:1 multiplexer and a two input XOR circuits. It has been observed that the transistor count has got reduced by half in a TG, two input AND gate, 2:1 multiplexer and in a two input XOR gate. Therefore, a significant reduction in transistor count and area requirement can be achieved by using the proposed technology. The proposed technology can be also used to perform the compact realization of other combinational and sequential circuitry in future.

  5. Relating mechanical properties and chemical bonding in an inorganic-organic framework material: a single-crystal nanoindentation study.

    Science.gov (United States)

    Tan, Jin Chong; Furman, Joshua D; Cheetham, Anthony K

    2009-10-14

    We report the application of nanoindentation and atomic force microscopy to establish the fundamental relationships between mechanical properties and chemical bonding in a dense inorganic-organic framework material: Ce(C(2)O(4))(HCO(2)), 1. Compound 1 is a mixed-ligand 3-D hybrid which crystallizes in an orthorhombic space group, in which its three basic building blocks, i.e. the inorganic metal-oxygen-metal (M-O-M) chains and the two organic bridging ligands, (oxalate and formate) are all oriented perpendicular to one another. This unique architecture enabled us to decouple the elastic and plastic mechanical responses along the three primary axes of a single crystal to understand the contribution associated with stiff vs compliant basic building blocks. The (001)-oriented facet that features rigid oxalate ligands down the c-axis exhibits the highest stiffness and hardness (E approximately 78 GPa and H approximately 4.6 GPa). In contrast, the (010)-oriented facet was found to be the most compliant and soft (E approximately 43 GPa and H approximately 3.9 GPa), since the formate ligand, which is the more compliant building block within this framework, constitutes the primary linkages down the b-axis. Notably, intermediate stiffness and hardness (E approximately 52 GPa and H approximately 4.1 GPa) were measured on the (100)-oriented planes. This can be attributed to the Ce-O-Ce chains that zigzag down the a-axis (Ce...Ce metal centers form an angle of approximately 132 degrees) and also the fact that the 9-coordinated CeO(9) polyhedra are expected to be geometrically more compliant. Our results present the first conclusive evidence that the crystal orientation dominated by inorganic chains is not necessarily more robust from the mechanical properties standpoint. Rigid organic bridging ligands (such as oxalate), on the other hand, can be used to produce greater stiffness and hardness properties in a chosen crystallographic orientation. This study demonstrates that

  6. Flexible semi-transparent silicon (100) fabric with high-k/metal gate devices

    KAUST Repository

    Rojas, Jhonathan Prieto

    2013-01-07

    Can we build a flexible and transparent truly high performance computer? High-k/metal gate stack based metal-oxide-semiconductor capacitor devices are monolithically fabricated on industry\\'s most widely used low-cost bulk single-crystalline silicon (100) wafers and then released as continuous, mechanically flexible, optically semi-transparent and high thermal budget compatible silicon fabric with devices. This is the first ever demonstration with this set of materials which allows full degree of freedom to fabricate nanoelectronics devices using state-of-the-art CMOS compatible processes and then to utilize them in an unprecedented way for wide deployment over nearly any kind of shape and architecture surfaces. Electrical characterization shows uncompromising performance of post release devices. Mechanical characterization shows extra-ordinary flexibility (minimum bending radius of 1 cm) making this generic process attractive to extend the horizon of flexible electronics for truly high performance computers. Schematic and photograph of flexible high-k/metal gate MOSCAPs showing high flexibility and C-V plot showing uncompromised performance. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Novel H+-Ion Sensor Based on a Gated Lateral BJT Pair

    Directory of Open Access Journals (Sweden)

    Heng Yuan

    2015-12-01

    Full Text Available An H+-ion sensor based on a gated lateral bipolar junction transistor (BJT pair that can operate without the classical reference electrode is proposed. The device is a special type of ion-sensitive field-effect transistor (ISFET. Classical ISFETs have the advantage of miniaturization, but  they are difficult to fabricate by a single fabrication process because of the bulky and brittle reference electrode materials. Moreover, the reference electrodes need to be separated from the sensor device in some cases. The proposed device is composed of two gated lateral BJT components, one of which had a silicide layer while the other was without the layer. The two components were operated under the metal-oxide semiconductor field-effect transistor (MOSFET-BJT hybrid mode, which can be controlled by emitter voltage and base current. Buffer solutions with different pH values were used as the sensing targets to verify the characteristics of the proposed device. Owing to their different sensitivities, both components could simultaneously detect the H+-ion concentration and function as a reference to each other. Per the experimental results, the sensitivity of the proposed device was found to be approximately 0.175 μA/pH. This experiment demonstrates enormous potential to lower the cost of the ISFET-based sensor technology.

  8. Novel H+-Ion Sensor Based on a Gated Lateral BJT Pair

    Science.gov (United States)

    Yuan, Heng; Zhang, Jixing; Cao, Chuangui; Zhang, Gangyuan; Zhang, Shaoda

    2015-01-01

    An H+-ion sensor based on a gated lateral bipolar junction transistor (BJT) pair that can operate without the classical reference electrode is proposed. The device is a special type of ion-sensitive field-effect transistor (ISFET). Classical ISFETs have the advantage of miniaturization, but  they are difficult to fabricate by a single fabrication process because of the bulky and brittle reference electrode materials. Moreover, the reference electrodes need to be separated from the sensor device in some cases. The proposed device is composed of two gated lateral BJT components, one of which had a silicide layer while the other was without the layer. The two components were operated under the metal-oxide semiconductor field-effect transistor (MOSFET)-BJT hybrid mode, which can be controlled by emitter voltage and base current. Buffer solutions with different pH values were used as the sensing targets to verify the characteristics of the proposed device. Owing to their different sensitivities, both components could simultaneously detect the H+-ion concentration and function as a reference to each other. Per the experimental results, the sensitivity of the proposed device was found to be approximately 0.175 μA/pH. This experiment demonstrates enormous potential to lower the cost of the ISFET-based sensor technology. PMID:26703625

  9. Novel H⁺-Ion Sensor Based on a Gated Lateral BJT Pair.

    Science.gov (United States)

    Yuan, Heng; Zhang, Jixing; Cao, Chuangui; Zhang, Gangyuan; Zhang, Shaoda

    2015-12-23

    An H⁺-ion sensor based on a gated lateral bipolar junction transistor (BJT) pair that can operate without the classical reference electrode is proposed. The device is a special type of ion-sensitive field-effect transistor (ISFET). Classical ISFETs have the advantage of miniaturization, but  they are difficult to fabricate by a single fabrication process because of the bulky and brittle reference electrode materials. Moreover, the reference electrodes need to be separated from the sensor device in some cases. The proposed device is composed of two gated lateral BJT components, one of which had a silicide layer while the other was without the layer. The two components were operated under the metal-oxide semiconductor field-effect transistor (MOSFET)-BJT hybrid mode, which can be controlled by emitter voltage and base current. Buffer solutions with different pH values were used as the sensing targets to verify the characteristics of the proposed device. Owing to their different sensitivities, both components could simultaneously detect the H⁺-ion concentration and function as a reference to each other. Per the experimental results, the sensitivity of the proposed device was found to be approximately 0.175 μA/pH. This experiment demonstrates enormous potential to lower the cost of the ISFET-based sensor technology.

  10. Proposal for multiple-valued logic in gated semiconducting carbon nanotubes

    Science.gov (United States)

    Dragoman, D.; Dragoman, M.

    2006-06-01

    The proposal for an implementation of multi-valued logical devices based on excited states of a single quantum well is analysed for various configurations of carbon nanotube quantum wells, which were already experimentally demonstrated at room temperature. The best configuration, which gathers all the advantages of multi-valued logic, is a gated carbon nanotube device where the quantum well is imprinted via DC voltages applied on gate electrodes.

  11. Resonant Tunneling in Gated Vertical One- dimensional Structures

    Science.gov (United States)

    Kolagunta, V. R.; Janes, D. B.; Melloch, M. R.; Webb, K. J.

    1997-03-01

    Vertical sub-micron transistors incorporating resonant tunneling multiple quantum well heterostructures are interesting in applications for both multi-valued logic devices and the study of quantization effects in vertical quasi- one-, zero- dimensional structures. Earlier we have demonstrated room temperature pinch-off of the resonant peak in sub-micron vertical resonant tunneling transistors structures using a self-aligned sidewall gating technique ( V.R. Kolagunta et. al., Applied Physics Lett., 69), 374(1996). In this paper we present the study of gating effects in vertical multiple quantum well resonant tunneling transistors. Multiple well quasi-1-D sidewall gated transistors with mesa dimensions of L_x=0.5-0.9μm and L_y=10-40μm were fabricated. The quantum heterostructure in these devices consists of two non-symmetric (180 ÅÅi-GaAs wells separated from each other and from the top and bottom n^+ GaAs/contacts region using Al_0.3Ga_0.7As tunneling barriers. Room temperature pinch-off of the multiple resonant peaks similar to that reported in the case of single well devices is observed in these devices^1. Current-voltage characteristics at liquid nitrogen temperatures show splitting of the resonant peaks into sub-bands with increasing negative gate bias indicative of quasi- 1-D confinement. Room-temperature and low-temperature current-voltage measurements shall be presented and discussed.

  12. Correction: Challenge in optoelectronic duplex switches: a red emission large-size single crystal and a unidirectional flexible thin film of a hybrid multifunctional material.

    Science.gov (United States)

    Zhu, Xiao; Zhang, Wan-Ying; Chen, Cheng; Ye, Qiong; Fu, Da-Wei

    2018-02-20

    Correction for 'Challenge in optoelectronic duplex switches: a red emission large-size single crystal and a unidirectional flexible thin film of a hybrid multifunctional material' by Xiao Zhu et al., Dalton Trans., 2018, DOI: 10.1039/c7dt04489e.

  13. Gated CT imaging using a free-breathing respiration signal from flow-volume spirometry

    International Nuclear Information System (INIS)

    D'Souza, Warren D.; Kwok, Young; Deyoung, Chad; Zacharapoulos, Nicholas; Pepelea, Mark; Klahr, Paul; Yu, Cedric X.

    2005-01-01

    Respiration-induced tumor motion is known to cause artifacts on free-breathing spiral CT images used in treatment planning. This leads to inaccurate delineation of target volumes on planning CT images. Flow-volume spirometry has been used previously for breath-holds during CT scans and radiation treatments using the active breathing control (ABC) system. We have developed a prototype by extending the flow-volume spirometer device to obtain gated CT scans using a PQ 5000 single-slice CT scanner. To test our prototype, we designed motion phantoms to compare image quality obtained with and without gated CT scan acquisition. Spiral and axial (nongated and gated) CT scans were obtained of phantoms with motion periods of 3-5 s and amplitudes of 0.5-2 cm. Errors observed in the volume estimate of these structures were as much as 30% with moving phantoms during CT simulation. Application of motion-gated CT with active breathing control reduced these errors to within 5%. Motion-gated CT was then implemented in patients and the results are presented for two clinical cases: lung and abdomen. In each case, gated scans were acquired at end-inhalation, end-exhalation in addition to a conventional free-breathing (nongated) scan. The gated CT scans revealed reduced artifacts compared with the conventional free-breathing scan. Differences of up to 20% in the volume of the structures were observed between gated and free-breathing scans. A comparison of the overlap of structures between the gated and free-breathing scans revealed misalignment of the structures. These results demonstrate the ability of flow-volume spirometry to reduce errors in target volumes via gating during CT imaging

  14. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    Energy Technology Data Exchange (ETDEWEB)

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong, E-mail: wangsd@suda.edu.cn [Institute of Functional Nano and Soft Materials (FUNSOM), Soochow University, Suzhou, Jiangsu 215123 (China)

    2014-10-20

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  15. Organic field-effect transistor nonvolatile memories utilizing sputtered C nanoparticles as nano-floating-gate

    International Nuclear Information System (INIS)

    Liu, Jie; Liu, Chang-Hai; She, Xiao-Jian; Sun, Qi-Jun; Gao, Xu; Wang, Sui-Dong

    2014-01-01

    High-performance organic field-effect transistor nonvolatile memories have been achieved using sputtered C nanoparticles as the nano-floating-gate. The sputtered C nano-floating-gate is prepared with low-cost material and simple process, forming uniform and discrete charge trapping sites covered by a smooth and complete polystyrene layer. The devices show large memory window, excellent retention capability, and programming/reading/erasing/reading endurance. The sputtered C nano-floating-gate can effectively trap both holes and electrons, and it is demonstrated to be suitable for not only p-type but also n-type organic field-effect transistor nonvolatile memories.

  16. Insights into operation of planar tri-gate tunnel field effect transistor for dynamic memory application

    Science.gov (United States)

    Navlakha, Nupur; Kranti, Abhinav

    2017-07-01

    Insights into device physics and operation through the control of energy barriers are presented for a planar tri-gate Tunnel Field Effect Transistor (TFET) based dynamic memory. The architecture consists of a double gate (G1) at the source side and a single gate (G2) at the drain end of the silicon film. Dual gates (G1) effectively enhance the tunneling based read mechanism through the enhanced coupling and improved electrostatic control over the channel. The single gate (G2) controls the holes in the potential barrier induced through the proper selection of bias and workfunction. The results indicate that the planar tri-gate achieves optimum performance evaluated in terms of two composite metrics (M1 and M2), namely, product of (i) Sense Margin (SM) and Retention Time (RT) i.e., M1 = SM × RT and (ii) Sense Margin and Current Ratio (CR) i.e., M2 = SM × CR. The regulation of barriers created by the gates (G1 and G2) through the optimal use of device parameters leads to better performance metrics, with significant improvement at scaled lengths as compared to other tunneling based dynamic memory architectures. The investigation shows that lengths of G1, G2 and lateral spacing can be scaled down to 25 nm, 50 nm, and 30 nm, respectively, while achieving reasonable values for (M1, M2). The work demonstrates a systematic approach to showcase the advancement in TFET based Dynamic Random Access Memory (DRAM) through the use of planar tri-gate topology at a lower bias value. The concept, design, and operation of planar tri-gate architecture provide valuable viewpoints for TFET based DRAM.

  17. Characterization of Small Focal Renal Lesions: Diagnostic Accuracy with Single-Phase Contrast-enhanced Dual-Energy CT with Material Attenuation Analysis Compared with Conventional Attenuation Measurements.

    Science.gov (United States)

    Marin, Daniele; Davis, Drew; Roy Choudhury, Kingshuk; Patel, Bhavik; Gupta, Rajan T; Mileto, Achille; Nelson, Rendon C

    2017-09-01

    Purpose To determine whether single-phase contrast material-enhanced dual-energy material attenuation analysis improves the characterization of small (1-4 cm) renal lesions compared with conventional attenuation measurements by using histopathologic analysis and follow-up imaging as the clinical reference standards. Materials and Methods In this retrospective, HIPAA-compliant, institutional review board-approved study, 136 consecutive patients (95 men and 41 women; mean age, 54 years) with 144 renal lesions (111 benign, 33 malignant) measuring 1-4 cm underwent single-energy unenhanced and contrast-enhanced dual-energy computed tomography (CT) of the abdomen. For each renal lesion, attenuation measurements were obtained; attenuation change of greater than or equal to 15 HU was considered evidence of enhancement. Dual-energy attenuation measurements were also obtained by using iodine-water, water-iodine, calcium-water, and water-calcium material basis pairs. Mean lesion attenuation values and material densities were compared between benign and malignant renal lesions by using the two-sample t test. Diagnostic accuracy of attenuation measurements and dual-energy material densities was assessed and validated by using 10-fold cross-validation to limit the effect of optimistic bias. Results By using cross-validated optimal thresholds at 100% sensitivity, iodine-water material attenuation images significantly improved specificity for differentiating between benign and malignant renal lesions compared with conventional enhancement measurements (93% [103 of 111]; 95% confidence interval: 86%, 97%; vs 81% [90 of 111]; 95% confidence interval: 73%, 88%) (P = .02). Sensitivity with iodine-water and calcium-water material attenuation images was also higher than that with conventional enhancement measurements, although the difference was not statistically significant. Conclusion Contrast-enhanced dual-energy CT with material attenuation analysis improves specificity for

  18. Comparative analysis of full-gate and short-gate dielectric modulated electrically doped Tunnel-FET based biosensors

    Science.gov (United States)

    Sharma, Dheeraj; Singh, Deepika; Pandey, Sunil; Yadav, Shivendra; Kondekar, P. N.

    2017-11-01

    In this work, we have done a comprehensive study between full-gate and short-gate dielectrically modulated (DM) electrically doped tunnel field-effect transistor (SGDM-EDTFET) based biosensors of equivalent dimensions. However, in both the structures, dielectric constant and charge density are considered as a sensing parameter for sensing the charged and non-charged biomolecules in the given solution. In SGDM-EDTFET architecture, the reduction in gate length results a significant improvement in the tunneling current due to occurrence of strong coupling between gate and channel region which ensures higher drain current sensitivity for detection of the biomolecules. Moreover, the sensitivity of dual metal SGDM-EDTFET is compared with the single metal SGDM-EDTFET to analyze the better sensing capability of both the devices for the biosensor application. Further, the effect of sensing parameter i.e., ON-current (ION), and ION/IOFF ratio is analysed for dual metal SGDM-EDTFET in comparison with dual metal SGDM-EDFET. From the comparison, it is found that dual metal SGDM-EDTFET based biosensor attains relatively better sensitivity and can be utilized as a suitable candidate for biosensing applications.

  19. Return on experience on control gates in nuclear power station

    International Nuclear Information System (INIS)

    Valendru, N.

    2009-01-01

    In application of an EDF internal directive, control gates are used at the exit of the Controlled Areas of each nuclear power station site for the radiological control of materials or wastes on pedestrians and vehicles. The author first presents the radiological control chain for people and its principles. This chain comprises the different controls performed within the controlled area, either at the exit of a works area or at the exit of the reactor building, the different controls performed at the exit of the controlled area (depending on the site classification), the control of pedestrians at the site exit, and the 'whole body' anthropo-gamma-metric control. For each of these controls, the authors indicate the detection objectives, the different contamination threshold values, and the type of gate used. In a second part, the authors more precisely present the new C2 gates which include gamma and beta sensors, indicate how control thresholds are adjusted on different power station sites, and discuss the lessons learned after the first years of use of these new gates (difficulties and problems faced as far as detection and detection thresholds are concerned, changes in organization)

  20. GATE Monte Carlo simulation of dose distribution using MapReduce in a cloud computing environment.

    Science.gov (United States)

    Liu, Yangchuan; Tang, Yuguo; Gao, Xin

    2017-12-01

    The GATE Monte Carlo simulation platform has good application prospects of treatment planning and quality assurance. However, accurate dose calculation using GATE is time consuming. The purpose of this study is to implement a novel cloud computing method for accurate GATE Monte Carlo simulation of dose distribution using MapReduce. An Amazon Machine Image installed with Hadoop and GATE is created to set up Hadoop clusters on Amazon Elastic Compute Cloud (EC2). Macros, the input files for GATE, are split into a number of self-contained sub-macros. Through Hadoop Streaming, the sub-macros are executed by GATE in Map tasks and the sub-results are aggregated into final outputs in Reduce tasks. As an evaluation, GATE simulations were performed in a cubical water phantom for X-ray photons of 6 and 18 MeV. The parallel simulation on the cloud computing platform is as accurate as the single-threaded simulation on a local server and the simulation correctness is not affected by the failure of some worker nodes. The cloud-based simulation time is approximately inversely proportional to the number of worker nodes. For the simulation of 10 million photons on a cluster with 64 worker nodes, time decreases of 41× and 32× were achieved compared to the single worker node case and the single-threaded case, respectively. The test of Hadoop's fault tolerance showed that the simulation correctness was not affected by the failure of some worker nodes. The results verify that the proposed method provides a feasible cloud computing solution for GATE.

  1. Thermoelectric Power in Bilayer Graphene Device with Ionic Liquid Gating.

    Science.gov (United States)

    Chien, Yung-Yu; Yuan, Hongtao; Wang, Chang-Ran; Lee, Wei-Li

    2016-02-08

    The quest for materials showing large thermoelectric power has long been one of the important subjects in material science and technology. Such materials have great potential for thermoelectric cooling and also high figure of merit ZT thermoelectric applications. We have fabricated bilayer graphene devices with ionic-liquid gating in order to tune its band gap via application of a perpendicular electric field on a bilayer graphene. By keeping the Fermi level at charge neutral point during the cool-down, we found that the charge puddles effect can be greatly reduced and thus largely improve the transport properties at low T in graphene-based devices using ionic liquid gating. At (Vig, Vbg) = (-1 V, +23 V), a band gap of about 36.6 ± 3 meV forms, and a nearly 40% enhancement of thermoelectric power at T = 120 K is clearly observed. Our works demonstrate the feasibility of band gap tuning in a bilayer graphene using ionic liquid gating. We also remark on the significant influence of the charge puddles effect in ionic-liquid-based devices.

  2. Cognitive mechanisms associated with auditory sensory gating

    Science.gov (United States)

    Jones, L.A.; Hills, P.J.; Dick, K.M.; Jones, S.P.; Bright, P.

    2016-01-01

    Sensory gating is a neurophysiological measure of inhibition that is characterised by a reduction in the P50 event-related potential to a repeated identical stimulus. The objective of this work was to determine the cognitive mechanisms that relate to the neurological phenomenon of auditory sensory gating. Sixty participants underwent a battery of 10 cognitive tasks, including qualitatively different measures of attentional inhibition, working memory, and fluid intelligence. Participants additionally completed a paired-stimulus paradigm as a measure of auditory sensory gating. A correlational analysis revealed that several tasks correlated significantly with sensory gating. However once fluid intelligence and working memory were accounted for, only a measure of latent inhibition and accuracy scores on the continuous performance task showed significant sensitivity to sensory gating. We conclude that sensory gating reflects the identification of goal-irrelevant information at the encoding (input) stage and the subsequent ability to selectively attend to goal-relevant information based on that previous identification. PMID:26716891

  3. 3D modeling of dual-gate FinFET

    Science.gov (United States)

    Mil'shtein, Samson; Devarakonda, Lalitha; Zanchi, Brian; Palma, John

    2012-11-01

    The tendency to have better control of the flow of electrons in a channel of field-effect transistors (FETs) did lead to the design of two gates in junction field-effect transistors, field plates in a variety of metal semiconductor field-effect transistors and high electron mobility transistors, and finally a gate wrapping around three sides of a narrow fin-shaped channel in a FinFET. With the enhanced control, performance trends of all FETs are still challenged by carrier mobility dependence on the strengths of the electrical field along the channel. However, in cases when the ratio of FinFET volume to its surface dramatically decreases, one should carefully consider the surface boundary conditions of the device. Moreover, the inherent non-planar nature of a FinFET demands 3D modeling for accurate analysis of the device performance. Using the Silvaco modeling tool with quantization effects, we modeled a physical FinFET described in the work of Hisamoto et al. (IEEE Tran. Elec. Devices 47:12, 2000) in 3D. We compared it with a 2D model of the same device. We demonstrated that 3D modeling produces more accurate results. As 3D modeling results came close to experimental measurements, we made the next step of the study by designing a dual-gate FinFET biased at V g1 > V g2. It is shown that the dual-gate FinFET carries higher transconductance than the single-gate device.

  4. Poly-Si TFTs integrated gate driver circuit with charge-sharing structure

    Science.gov (United States)

    Chen, Meng; Lei, Jiefeng; Huang, Shengxiang; Liao, Congwei; Deng, Lianwen

    2017-06-01

    A p-type low-temperature poly-Si thin film transistors (LTPS TFTs) integrated gate driver using 2 non-overlapped clocks is proposed. This gate driver features charge-sharing structure to turn off buffer TFT and suppresses voltage feed-through effects. It is analyzed that the conventional gate driver suffers from waveform distortions due to voltage uncertainty of internal nodes for the initial period. The proposed charge-sharing structure also helps to suppress the unexpected pulses during the initialization phases. The proposed gate driver shows a simple circuit, as only 6 TFTs and 1 capacitor are used for single-stage, and the buffer TFT is used for both pulling-down and pulling-up of output electrode. Feasibility of the proposed gate driver is proven through detailed analyses. Investigations show that voltage bootrapping can be maintained once the bootrapping capacitance is larger than 0.8 pF, and pulse of gate driver outputs can be reduced to 5 μs. The proposed gate driver can still function properly with positive {V}{TH} shift within 0.4 V and negative {V}{TH} shift within -1.2 V and it is robust and promising for high-resolution display. Project supported by the Science and Technology Project of Hunan Province, China (No. 2015JC3401)

  5. High-Fidelity Entangling Gates for Two-Electron Spin Qubits

    Science.gov (United States)

    Cerfontaine, Pascal; Mehl, Sebastian; Divincenzo, David P.; Bluhm, Hendrik

    High fidelity gate operations for manipulating individual and multiple qubits are a prerequisite for fault-tolerant quantum information processing. Recently, we have shown that single-qubit gates for singlet-triplet qubits in GaAs can be pulse-engineered to reduce systematic errors and mitigate magnetic field fluctuations from the abundant nuclear spins, leading to experimentally demonstrated gate fidelities of 98.5%. We expect that a similar approach will be successful for two-qubit gates. We now describe short gating sequences for exchange-based two-qubit gates, showing that gate infidelities below 0.1% can be reached in realistic quantum dot setups. Additionally, we perform numerical pulse optimization to fully take the experimentally important imperfections into account, minimizing systematic errors and noise sensitivity. Since transferring the optimal control pulses to an experimental setting will inevitably incur systematic errors, we discuss how these errors can be calibrated on the experiment Supported by the Alexander von Humboldt Foundation, Alfried Krupp von Bohlen und Halbach Foundation, DFG Grant BL 1197/2- 1, and the Deutsche Telekom Foundation.

  6. Construction of a fuzzy and Boolean logic gates based on DNA.

    Science.gov (United States)

    Zadegan, Reza M; Jepsen, Mette D E; Hildebrandt, Lasse L; Birkedal, Victoria; Kjems, Jørgen

    2015-04-17

    Logic gates are devices that can perform logical operations by transforming a set of inputs into a predictable single detectable output. The hybridization properties, structure, and function of nucleic acids can be used to make DNA-based logic gates. These devices are important modules in molecular computing and biosensing. The ideal logic gate system should provide a wide selection of logical operations, and be integrable in multiple copies into more complex structures. Here we show the successful construction of a small DNA-based logic gate complex that produces fluorescent outputs corresponding to the operation of the six Boolean logic gates AND, NAND, OR, NOR, XOR, and XNOR. The logic gate complex is shown to work also when implemented in a three-dimensional DNA origami box structure, where it controlled the position of the lid in a closed or open position. Implementation of multiple microRNA sensitive DNA locks on one DNA origami box structure enabled fuzzy logical operation that allows biosensing of complex molecular signals. Integrating logic gates with DNA origami systems opens a vast avenue to applications in the fields of nanomedicine for diagnostics and therapeutics. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  7. Mesoscopic Rydberg Gate Based on Electromagnetically Induced Transparency

    International Nuclear Information System (INIS)

    Mueller, M.; Lesanovsky, I.; Zoller, P.; Weimer, H.; Buechler, H. P.

    2009-01-01

    We demonstrate theoretically a parallelized C-NOT gate which allows us to entangle a mesoscopic ensemble of atoms with a single control atom in a single step, with high fidelity and on a microsecond time scale. Our scheme relies on the strong and long-ranged interaction between Rydberg atoms triggering electromagnetically induced transparency. By this we can robustly implement a conditional transfer of all ensemble atoms between two logical states, depending on the state of the control atom. We outline a many-body interferometer which allows a comparison of two many-body quantum states by performing a measurement of the control atom.

  8. Effects of stereo-regularity on the single-chain mechanics of polylactic acid and its implications on the physical properties of bulk materials.

    Science.gov (United States)

    Cheng, Bo; Qian, Lu; Qian, Hu-Jun; Lu, Zhong-Yuan; Cui, Shuxun

    2017-10-05

    The material properties of polylactic acid (PLA) are largely determined by its stereo-regularity (tacticity). To find out the origin at the molecular level, the single-chain mechanics of poly-l-lactic acid (PLLA) and poly-d,l-lactide (PDLLA) were comparatively investigated by single-molecule atomic force microscopy (AFM). At a low concentration, PLLA adopted a random-coil conformation in a good solvent. At a high concentration, however, the PLLA chain can be induced into a helix, which consumed additional energy during unfolding by further stretching. Due to the random arrangement of l- and d-repeating units in the PDLLA chain, PDLLA adopts a random-coil conformation at all concentrations. The difference in single-chain mechanics of PLLA and PDLLA at high concentrations may be the cause of their different macroscopic properties. This is the first report to reveal the stereo-regularity-dependent mechanics of a polymer at the single-molecule level, which may help to bridge the gap between understanding single-molecule and materials properties.

  9. MCP gated x-ray framing camera

    Science.gov (United States)

    Cai, Houzhi; Liu, Jinyuan; Niu, Lihong; Liao, Hua; Zhou, Junlan

    2009-11-01

    A four-frame gated microchannel plate (MCP) camera is described in this article. Each frame photocathode coated with gold on the MCP is part of a transmission line with open circuit end driven by the gating electrical pulse. The gating pulse is 230 ps in width and 2.5 kV in amplitude. The camera is tested by illuminating its photocathode with ultraviolet laser pulses, 266 nm in wavelength, which shows exposure time as short as 80 ps.

  10. Gating-ML: XML-based gating descriptions in flow cytometry.

    Science.gov (United States)

    Spidlen, Josef; Leif, Robert C; Moore, Wayne; Roederer, Mario; Brinkman, Ryan R

    2008-12-01

    The lack of software interoperability with respect to gating due to lack of a standardized mechanism for data exchange has traditionally been a bottleneck, preventing reproducibility of flow cytometry (FCM) data analysis and the usage of multiple analytical tools. To facilitate interoperability among FCM data analysis tools, members of the International Society for the Advancement of Cytometry (ISAC) Data Standards Task Force (DSTF) have developed an XML-based mechanism to formally describe gates (Gating-ML). Gating-ML, an open specification for encoding gating, data transformations and compensation, has been adopted by the ISAC DSTF as a Candidate Recommendation. Gating-ML can facilitate exchange of gating descriptions the same way that FCS facilitated for exchange of raw FCM data. Its adoption will open new collaborative opportunities as well as possibilities for advanced analyses and methods development. The ISAC DSTF is satisfied that the standard addresses the requirements for a gating exchange standard.

  11. Slime mould processors, logic gates and sensors.

    Science.gov (United States)

    Adamatzky, A

    2015-07-28

    A heterotic, or hybrid, computation implies that two or more substrates of different physical nature are merged into a single device with indistinguishable parts. These hybrid devices then undertake coherent acts on programmable and sensible processing of information. We study the potential of heterotic computers using slime mould acting under the guidance of chemical, mechanical and optical stimuli. Plasmodium of acellular slime mould Physarum polycephalum is a gigantic single cell visible to the unaided eye. The cell shows a rich spectrum of behavioural morphological patterns in response to changing environmental conditions. Given data represented by chemical or physical stimuli, we can employ and modify the behaviour of the slime mould to make it solve a range of computing and sensing tasks. We overview results of laboratory experimental studies on prototyping of the slime mould morphological processors for approximation of Voronoi diagrams, planar shapes and solving mazes, and discuss logic gates implemented via collision of active growing zones and tactile responses of P. polycephalum. We also overview a range of electronic components--memristor, chemical, tactile and colour sensors-made of the slime mould. © 2015 The Author(s) Published by the Royal Society. All rights reserved.

  12. Universal Quantum Computing with Measurement-Induced Continuous-Variable Gate Sequence in a Loop-Based Architecture.

    Science.gov (United States)

    Takeda, Shuntaro; Furusawa, Akira

    2017-09-22

    We propose a scalable scheme for optical quantum computing using measurement-induced continuous-variable quantum gates in a loop-based architecture. Here, time-bin-encoded quantum information in a single spatial mode is deterministically processed in a nested loop by an electrically programmable gate sequence. This architecture can process any input state and an arbitrary number of modes with almost minimum resources, and offers a universal gate set for both qubits and continuous variables. Furthermore, quantum computing can be performed fault tolerantly by a known scheme for encoding a qubit in an infinite-dimensional Hilbert space of a single light mode.

  13. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures

    International Nuclear Information System (INIS)

    Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

    2008-01-01

    The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter

  14. Study of the tunnelling initiated leakage current through the carbon nanotube embedded gate oxide in metal oxide semiconductor structures.

    Science.gov (United States)

    Chakraborty, Gargi; Sarkar, C K; Lu, X B; Dai, J Y

    2008-06-25

    The tunnelling currents through the gate dielectric partly embedded with semiconducting single-wall carbon nanotubes in a silicon metal-oxide-semiconductor (MOS) structure have been investigated. The application of the gate voltage to such an MOS device results in the band bending at the interface of the partly embedded oxide dielectric and the surface of the silicon, initiating tunnelling through the gate oxide responsible for the gate leakage current whenever the thickness of the oxide is scaled. A model for silicon MOS structures, where carbon nanotubes are confined in a narrow layer embedded in the gate dielectric, is proposed to investigate the direct and the Fowler-Nordheim (FN) tunnelling currents of such systems. The idea of embedding such elements in the gate oxide is to assess the possibility for charge storage for memory device applications. Comparing the FN tunnelling onset voltage between the pure gate oxide and the gate oxide embedded with carbon nanotubes, it is found that the onset voltage decreases with the introduction of the nanotubes. The direct tunnelling current has also been studied at very low gate bias, for the thin oxide MOS structure which plays an important role in scaling down the MOS transistors. The FN tunnelling current has also been studied with varying nanotube diameter.

  15. Spin-polarized current generated by magneto-electrical gating

    International Nuclear Information System (INIS)

    Ma Minjie; Jalil, Mansoor Bin Abdul; Tan, Seng Ghee

    2012-01-01

    We theoretically study spin-polarized current through a single electron tunneling transistor (SETT), in which a quantum dot (QD) is coupled to non-magnetic source and drain electrodes via tunnel junctions, and gated by a ferromagnetic (FM) electrode. The I–V characteristics of the device are investigated for both spin and charge currents, based on the non-equilibrium Green's function formalism. The FM electrode generates a magnetic field, which causes a Zeeman spin-splitting of the energy levels in the QD. By tuning the size of the Zeeman splitting and the source–drain bias, a fully spin-polarized current is generated. Additionally, by modulating the electrical gate bias, one can effect a complete switch of the polarization of the tunneling current from spin-up to spin-down current, or vice versa. - Highlights: ► The spin polarized transport through a single electron tunneling transistor is systematically studied. ► The study is based on Keldysh non-equilibrium Green's function and equation of motion method. ► A fully spin polarized current is observed. ► We propose to reverse current polarization by the means of gate voltage modulation. ► This device can be used as a bi-polarization current generator.

  16. Instant Oracle GoldenGate

    CERN Document Server

    Bruzzese, Tony

    2013-01-01

    Filled with practical, step-by-step instructions and clear explanations for the most important and useful tasks. Get the job done and learn as you go. A how-To book with practical recipes accompanied with rich screenshots for easy comprehension.This is a Packt Instant How-to guide, which provides concise and clear recipes for performing the core task of replication using Oracle GoldenGate.The book is aimed at DBAs from any of popular RDBMS systems such as Oracle, SQL Server, Teradata, Sybase, and so on. The level of detail provides quick applicability to beginners and a handy review for more a

  17. Time complexity and gate complexity

    International Nuclear Information System (INIS)

    Koike, Tatsuhiko; Okudaira, Yosuke

    2010-01-01

    We formulate and investigate the simplest version of time-optimal quantum computation theory (TO-QCT), where the computation time is defined by the physical one and the Hamiltonian contains only one- and two-qubit interactions. This version of TO-QCT is also considered as optimality by sub-Riemannian geodesic length. The work has two aims: One is to develop a TO-QCT itself based on a physically natural concept of time, and the other is to pursue the possibility of using TO-QCT as a tool to estimate the complexity in conventional gate-optimal quantum computation theory (GO-QCT). In particular, we investigate to what extent is true the following statement: Time complexity is polynomial in the number of qubits if and only if gate complexity is also. In the analysis, we relate TO-QCT and optimal control theory (OCT) through fidelity-optimal computation theory (FO-QCT); FO-QCT is equivalent to TO-QCT in the limit of unit optimal fidelity, while it is formally similar to OCT. We then develop an efficient numerical scheme for FO-QCT by modifying Krotov's method in OCT, which has a monotonic convergence property. We implemented the scheme and obtained solutions of FO-QCT and of TO-QCT for the quantum Fourier transform and a unitary operator that does not have an apparent symmetry. The former has a polynomial gate complexity and the latter is expected to have an exponential one which is based on the fact that a series of generic unitary operators has an exponential gate complexity. The time complexity for the former is found to be linear in the number of qubits, which is understood naturally by the existence of an upper bound. The time complexity for the latter is exponential in the number of qubits. Thus, both the targets seem to be examples satisfyng the preceding statement. The typical characteristics of the optimal Hamiltonians are symmetry under time reversal and constancy of one-qubit operation, which are mathematically shown to hold in fairly general situations.

  18. Liquid–Solid Dual-Gate Organic Transistors with Tunable Threshold Voltage for Cell Sensing

    KAUST Repository

    Zhang, Yu

    2017-10-17

    Liquid electrolyte-gated organic field effect transistors and organic electrochemical transistors have recently emerged as powerful technology platforms for sensing and simulation of living cells and organisms. For such applications, the transistors are operated at a gate voltage around or below 0.3 V because prolonged application of a higher voltage bias can lead to membrane rupturing and cell death. This constraint often prevents the operation of the transistors at their maximum transconductance or most sensitive regime. Here, we exploit a solid–liquid dual-gate organic transistor structure, where the threshold voltage of the liquid-gated conduction channel is controlled by an additional gate that is separated from the channel by a metal-oxide gate dielectric. With this design, the threshold voltage of the “sensing channel” can be linearly tuned in a voltage window exceeding 0.4 V. We have demonstrated that the dual-gate structure enables a much better sensor response to the detachment of human mesenchymal stem cells. In general, the capability of tuning the optimal sensing bias will not only improve the device performance but also broaden the material selection for cell-based organic bioelectronics.

  19. Fringing field effects in negative capacitance field-effect transistors with a ferroelectric gate insulator

    Science.gov (United States)

    Hattori, Junichi; Fukuda, Koichi; Ikegami, Tsutomu; Ota, Hiroyuki; Migita, Shinji; Asai, Hidehiro; Toriumi, Akira

    2018-04-01

    We study the effects of fringing electric fields on the behavior of negative-capacitance (NC) field-effect transistors (FETs) with a silicon-on-insulator body and a gate stack consisting of an oxide film, an internal metal film, a ferroelectric film, and a gate electrode using our own device simulator that can properly handle the complicated relationship between the polarization and the electric field in ferroelectric materials. The behaviors of such NC FETs and the corresponding metal-oxide-semiconductor (MOS) FETs are simulated and compared with each other to evaluate the effects of the NC of the ferroelectric film. Then, the fringing field effects are evaluated by comparing the NC effects in NC FETs with and without gate spacers. The fringing field between the gate stack, especially the internal metal film, and the source/drain region induces more charges at the interface of the film with the ferroelectric film. Accordingly, the function of the NC to modulate the gate voltage and the resulting function to improve the subthreshold swing are enhanced. We also investigate the relationships of these fringing field effects to the drain voltage and four design parameters of NC FETs, i.e., gate length, gate spacer permittivity, internal metal film thickness, and oxide film thickness.

  20. Thermal and electrochemical gate effects on DNA conductance

    International Nuclear Information System (INIS)

    Hihath, Joshua; Chen Fang; Zhang Peiming; Tao Nongjian

    2007-01-01

    In an attempt to understand the complexities of DNA charge transport we have used a scanning tunnelling microscope break junction to repeatedly form a large number of Au-DNA-Au junctions. The DNA is covalently bound to the Au electrodes via gold-thiol bonds, and all measurements are carried out in an aqueous buffer solution to maintain a biological conformation of the duplex. A statistical analysis is carried out to determine the conductance of a single DNA duplex. Previously, we have seen an algebraic dependence of the conductance on length, suggesting a hopping mechanism. To attempt to verify this as the conduction mechanism we have changed the solution temperature and applied an electrochemical gate to the molecular junction to help elucidate the charge transport properties. In an alternating GC sequence with a length of eight base pairs, neither the temperature nor the gate potential caused a significant change in the conductance within the available experimental window

  1. Thermal and electrochemical gate effects on DNA conductance

    Energy Technology Data Exchange (ETDEWEB)

    Hihath, Joshua [Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287 (United States); Chen Fang [Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287 (United States); Zhang Peiming [Center for Single Molecule Biophysics, Biodesign Institute, Arizona State University, Tempe, AZ 85287 (United States); Tao Nongjian [Department of Electrical Engineering and Center for Solid State Electronics Research, Arizona State University, Tempe, AZ 85287 (United States)

    2007-05-30

    In an attempt to understand the complexities of DNA charge transport we have used a scanning tunnelling microscope break junction to repeatedly form a large number of Au-DNA-Au junctions. The DNA is covalently bound to the Au electrodes via gold-thiol bonds, and all measurements are carried out in an aqueous buffer solution to maintain a biological conformation of the duplex. A statistical analysis is carried out to determine the conductance of a single DNA duplex. Previously, we have seen an algebraic dependence of the conductance on length, suggesting a hopping mechanism. To attempt to verify this as the conduction mechanism we have changed the solution temperature and applied an electrochemical gate to the molecular junction to help elucidate the charge transport properties. In an alternating GC sequence with a length of eight base pairs, neither the temperature nor the gate potential caused a significant change in the conductance within the available experimental window.

  2. Simulation of time curves in small animal PET using GATE

    International Nuclear Information System (INIS)

    Simon, Luc; Strul, Daniel; Santin, Giovanni; Krieguer, Magalie; Morel, Christian

    2004-01-01

    The ClearPET project of the Crystal Clear Collaboration (CCC) is building spin-off technology for high resolution small animal Positron Emission Tomography (PET). Monte Carlo simulation is essential for optimizing the specifications of these systems with regards to their most important characteristics, such as spatial resolution, sensitivity, or count rate performance. GATE, the Geant4 Application for Tomographic Emission simulates the passing of time during real acquisitions, allowing to handle dynamic systems such as decaying source distributions or moving detectors. GATE output is analyzed on an event-by-event basis. The time associated with each single event allows to sort coincidences and to model dead-time. This leads to the study of time curves for a prospective small animal PET scanner design. The count rates of true, and random coincidences are discussed together with the corresponding Noise Equivalent Count (NEC) rates as a function of some PET scanner specifications such as detector dead time, or coincidence time window

  3. Two-dimensional kinetic analysis suggests nonsequential gating of mechanosensitive channels in Xenopus oocytes.

    Science.gov (United States)

    Gil, Z; Magleby, K L; Silberberg, S D

    2001-10-01

    Xenopus oocytes express mechanosensitive (MS(XO)) channels that can be studied in excised patches of membrane with the patch-clamp technique. This study examines the steady-state kinetic gating properties of MS(XO) channels using detailed single-channel analysis. The open and closed one-dimensional dwell-time distributions were described by the sums of 2-3 open and 5-7 closed exponential components, respectively, indicating that the channels enter at least 2-3 open and 5-7 closed kinetic states during gating. Dependency plots revealed that the durations of adjacent open and closed intervals were correlated, indicating two or more gateway states in the gating mechanism for MS channels. Maximum likelihood fitting of two-dimensional dwell-time distributions to both generic and specific models was used to examine gating mechanism and rank models. A kinetic scheme with five closed and five open states, in which each closed state could make a direct transition to an open state (two-tiered model) could account for the major features of the single-channel data. Two-tiered models that allowed direct transitions to subconductance open states in addition to the fully open state were also consistent with multiple gateway states. Thus, the gating mechanism of MS(XO) channels differs from the sequential (linear) gating mechanisms considered for MS channels in bacteria, chick skeletal muscle, and Necturus proximal tubule.

  4. Advanced in-line optical metrology of sub-10nm structures for gate all around devices (GAA)

    Science.gov (United States)

    Muthinti, Raja; Loubet, Nicolas; Chao, Robin; Ott, John; Guillorn, Michael; Felix, Nelson; Gaudiello, John; Lund, Parker; Cepler, Aron; Sendelbach, Matthew; Cohen, Oded; Wolfling, Shay; Bozdog, Cornel; Klare, Mark

    2016-03-01

    Gate-all-around (GAA) nanowire (NW) devices have long been acknowledged as the ultimate device from an electrostatic scaling point of view. The GAA architecture offers improved short channel effect (SCE) immunity compared to single and double gate planar, FinFET, and trigate structures. One attractive proposal for making GAA devices involves the use of a multilayer fin-like structure consisting of layers of Si and SiGe. However, such structures pose various metrology challenges, both geometrical and material. Optical Scatterometry, also called optical critical dimension (OCD) is a fast, accurate and non-destructive in-line metrology technique well suited for GAA integration challenges. In this work, OCD is used as an enabler for the process development of nanowire devices, extending its abilities to learn new material and process aspects specific to this novel device integration. The specific metrology challenges from multiple key steps in the process flow are detailed, along with the corresponding OCD solutions and results. In addition, Low Energy X-Ray Fluorescence (LE-XRF) is applied to process steps before and after the removal of the SiGe layers in order to quantify the amount of Ge present at each step. These results are correlated to OCD measurements of the Ge content, demonstrating that both OCD and LE-XRF are sensitive to Ge content for these applications.

  5. Highly tunable local gate controlled complementary graphene device performing as inverter and voltage controlled resistor.

    Science.gov (United States)

    Kim, Wonjae; Riikonen, Juha; Li, Changfeng; Chen, Ya; Lipsanen, Harri

    2013-10-04

    Using single-layer CVD graphene, a complementary field effect transistor (FET) device is fabricated on the top of separated back-gates. The local back-gate control of the transistors, which operate with low bias at room temperature, enables highly tunable device characteristics due to separate control over electrostatic doping of the channels. Local back-gating allows control of the doping level independently of the supply voltage, which enables device operation with very low VDD. Controllable characteristics also allow the compensation of variation in the unintentional doping typically observed in CVD graphene. Moreover, both p-n and n-p configurations of FETs can be achieved by electrostatic doping using the local back-gate. Therefore, the device operation can also be switched from inverter to voltage controlled resistor, opening new possibilities in using graphene in logic circuitry.

  6. Quad delay gate generator (LBL No. 21X6691 P-2)

    International Nuclear Information System (INIS)

    McDonald, R.J.; Maier, M.R.; Landis, D.A.; Wozniak, G.J.

    1986-08-01

    A quad delay gate generator has been designed and packaged in a single-width NIM module. Both delay times and gate widths may be set continuously from 25 ns to 120 μsec. In normal operation, the gate follows the delay time unless a ''stop'' pulse cuts it short. Alternatively, the module may be operated in a bipolar mode, where the delay time is set by the input ''start'' pulse and reset by the input ''stop'' pulse. Modes and coarse time ranges are set via an octal DIP switch on the front panel. Fine adjustments of the delay and gate width are made via two twenty-turn potentiometers. Stability over a several day period was measured at ∼ 250 ps on the 120 ns full scale range. LEDs gives a visual indication of both the input rate and the dead time

  7. Multi-Valued Logic Gates based on Ballistic Transport in Quantum Point Contacts

    Science.gov (United States)

    Seo, M.; Hong, C.; Lee, S.-Y.; Choi, H. K.; Kim, N.; Chung, Y.; Umansky, V.; Mahalu, D.

    2014-01-01

    Multi-valued logic gates, which can handle quaternary numbers as inputs, are developed by exploiting the ballistic transport properties of quantum point contacts in series. The principle of a logic gate that finds the minimum of two quaternary number inputs is demonstrated. The device is scalable to allow multiple inputs, which makes it possible to find the minimum of multiple inputs in a single gate operation. Also, the principle of a half-adder for quaternary number inputs is demonstrated. First, an adder that adds up two quaternary numbers and outputs the sum of inputs is demonstrated. Second, a device to express the sum of the adder into two quaternary digits [Carry (first digit) and Sum (second digit)] is demonstrated. All the logic gates presented in this paper can in principle be extended to allow decimal number inputs with high quality QPCs.

  8. IR Camera Validation of IGBT Junction Temperature Measurement via Peak Gate Current

    DEFF Research Database (Denmark)

    Baker, Nick; Dupont, Laurent; Munk-Nielsen, Stig

    2017-01-01

    Infra-red measurements are used to assess the measurement accuracy of the Peak Gate Current (IGPeak) method for IGBT junction temperature measurement. Single IGBT chips with the gate pad in both the centre and the edge are investigated, along with paralleled chips, as well as chips suffering...... partial bond-wire lift-off. Results are also compared with a traditional electrical temperature measurement method: the voltage drop under low current (VCE(low)). In all cases, the IGPeak method is found to provide a temperature slightly overestimating the temperature of the gate pad. Consequently, both...... the gate pad position and chip temperature distribution influence whether the measurement is representative of the mean junction temperature. These results remain consistent after chips are degraded through bondwire lift-off. In a paralleled IGBT configuration with non-negligible temperature disequilibrium...

  9. Controlling the layer localization of gapless states in bilayer graphene with a gate voltage

    Science.gov (United States)

    Jaskólski, W.; Pelc, M.; Bryant, Garnett W.; Chico, Leonor; Ayuela, A.

    2018-04-01

    Experiments in gated bilayer graphene with stacking domain walls present topological gapless states protected by no-valley mixing. Here we research these states under gate voltages using atomistic models, which allow us to elucidate their origin. We find that the gate potential controls the layer localization of the two states, which switches non-trivially between layers depending on the applied gate voltage magnitude. We also show how these bilayer gapless states arise from bands of single-layer graphene by analyzing the formation of carbon bonds between layers. Based on this analysis we provide a model Hamiltonian with analytical solutions, which explains the layer localization as a function of the ratio between the applied potential and interlayer hopping. Our results open a route for the manipulation of gapless states in electronic devices, analogous to the proposed writing and reading memories in topological insulators.

  10. Boolean gates on actin filaments

    Energy Technology Data Exchange (ETDEWEB)

    Siccardi, Stefano, E-mail: ssiccardi@2ssas.it [The Unconventional Computing Centre, University of the West of England, Bristol (United Kingdom); Tuszynski, Jack A., E-mail: jackt@ualberta.ca [Department of Oncology, University of Alberta, Edmonton, Alberta (Canada); Adamatzky, Andrew, E-mail: andrew.adamatzky@uwe.ac.uk [The Unconventional Computing Centre, University of the West of England, Bristol (United Kingdom)

    2016-01-08

    Actin is a globular protein which forms long polar filaments in the eukaryotic cytoskeleton. Actin networks play a key role in cell mechanics and cell motility. They have also been implicated in information transmission and processing, memory and learning in neuronal cells. The actin filaments have been shown to support propagation of voltage pulses. Here we apply a coupled nonlinear transmission line model of actin filaments to study interactions between voltage pulses. To represent digital information we assign a logical TRUTH value to the presence of a voltage pulse in a given location of the actin filament, and FALSE to the pulse's absence, so that information flows along the filament with pulse transmission. When two pulses, representing Boolean values of input variables, interact, then they can facilitate or inhibit further propagation of each other. We explore this phenomenon to construct Boolean logical gates and a one-bit half-adder with interacting voltage pulses. We discuss implications of these findings on cellular process and technological applications. - Highlights: • We simulate interaction between voltage pulses using on actin filaments. • We use a coupled nonlinear transmission line model. • We design Boolean logical gates via interactions between the voltage pulses. • We construct one-bit half-adder with interacting voltage pulses.

  11. Single crystal neutron diffraction studies on ferroelectric materials. A review on neutron diffraction works made using the 4-circle diffractometer at KUR

    International Nuclear Information System (INIS)

    Iwata, Yutaka; Mitani, Shigeshi; Shibuya, Iwao

    1994-01-01

    Summary is made on the single crystal neutron diffraction works carried out over the past 30 years using 4-circle neutron diffractometer installed at B-3 beam hole of the Kyoto University Reactor. Subjects dealt with are studies on structure determinations and investigations on phase transition mechanism in various ferroelectric materials and related substances. New applications are also introduced on neutron diffraction method for investigating molecular dynamics and behavior of hydrogens in crystals. (author) 83 refs

  12. Feasibility of epicardial adipose tissue quantification in non-ECG-gated low-radiation-dose CT: comparison with prospectively ECG-gated cardiac CT

    International Nuclear Information System (INIS)

    Simon-Yarza, Isabel; Viteri-Ramirez, Guillermo; Saiz-Mendiguren, Ramon; Slon-Roblero, Pedro J.; Paramo, Maria; Bastarrika, Gorka

    2012-01-01

    Background: Epicardial adipose tissue (EAT) is an important indicator of cardiovascular risk. This parameter is generally assessed on ECG-gated computed tomography (CT) images. Purpose: To evaluate feasibility and reliability of EAT quantification on non-gated thoracic low-radiation-dose CT examinations with respect to prospectively ECG-gated cardiac CT acquisition. Material and Methods: Sixty consecutive asymptomatic smokers (47 men; mean age 64 ± 9.8 years) underwent low-dose CT of the chest and prospectively ECG-gated cardiac CT acquisitions (64-slice dual-source CT). The two examinations were reconstructed with the same range, field of view, slice thickness, and convolution algorithm. Two independent observers blindly quantified EAT volume using commercially available software. Data were compared with paired sample Student t-test, concordance correlation coefficients (CCC), and Bland-Altman plots. Results: No statistically significant difference was observed for EAT volume quantification with low-dose-CT (141.7 ± 58.3 mL) with respect to ECG-gated CT (142.7 ± 57.9 mL). Estimation of CCC showed almost perfect concordance between the two techniques for EAT-volume assessment (CCC, 0.99; mean difference, 0.98 ± 5.1 mL). Inter-observer agreement for EAT volume estimation was CCC: 0.96 for low-dose-CT examinations and 0.95 for ECG-gated CT. Conclusion: Non-gated low-dose CT allows quantifying EAT with almost the same concordance and reliability as using dedicated prospectively ECG-gated cardiac CT acquisition protocols

  13. Development of technique for high-pressure single-crystal neutron scattering and its application to studies of magnetic materials

    International Nuclear Information System (INIS)

    Osakabe, Toyotake

    2012-01-01

    In this article, a new high-pressure apparatus for single-crystal magnetic neutron diffraction under 10 GPa is described. First, new hybrid-anvil, which is composed of an opposed pair of a supported SiC anvil and a tungsten carbide (WC) anvil with a center-dimpled culet, is introduced. Next, results of an investigation of pressure-transmitting media are shown. The hydrostaticity of the media is essential for the single-crystal diffraction experiments. Finally, a thermal neutron focusing device with a lot of curved supermirrors is shown. The device can compensate weak magnetic signals from tiny samples in high-pressure cells. As examples of the studies using the apparatus, the high-pressure single-crystal magnetic neutron diffraction experiments on 4f-electron systems PrFe 4 P 12 and HoB 2 C 2 are taken up. (author)

  14. Time-gated energy-selected cold neutron radiography

    CERN Document Server

    McDonald, T E; Claytor, T N; Farnum, E H; Greene, G L; Morris, C

    1999-01-01

    A technique is under development at the Los Alamos Neutron Science Center (LANSCE), Manuel Lujan Jr. Neutron Scattering Center (Lujan Center) for producing neutron radiography using only a narrow energy range of cold neutrons. The technique, referred to as time-gated energy-selected (TGES) neutron radiography, employs the pulsed neutron source at the Lujan Center with time of flight to obtain a neutron pulse having an energy distribution that is a function of the arrival time at the imager. The radiograph is formed on a short persistence scintillator and a gated, intensified, cooled CCD camera is employed to record the images, which are produced at the specific neutron energy range determined by the camera gate. The technique has been used to achieve a degree of material discrimination in radiographic images. For some materials, such as beryllium and carbon, at energies above the Bragg cutoff the neutron scattering cross section is relatively high while at energies below the Bragg cutoff the scattering cross ...

  15. SiC Power MOSFET with Improved Gate Dielectric

    Energy Technology Data Exchange (ETDEWEB)

    Sbrockey, Nick M. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Tompa, Gary S. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Spencer, Michael G. [Structured Materials Industries, Inc., Piscataway, NJ (United States); Chandrashekhar, Chandra M.V. S. [Structured Materials Industries, Inc., Piscataway, NJ (United States)

    2010-08-23

    In this STTR program, Structured Materials Industries (SMI), and Cornell University are developing novel gate oxide technology, as a critical enabler for silicon carbide (SiC) devices. SiC is a wide bandgap semiconductor material, with many unique properties. SiC devices are ideally suited for high-power, highvoltage, high-frequency, high-temperature and radiation resistant applications. The DOE has expressed interest in developing SiC devices for use in extreme environments, in high energy physics applications and in power generation. The development of transistors based on the Metal Oxide Semiconductor Field Effect Transistor (MOSFET) structure will be critical to these applications.

  16. A gate drive circuit for gate-turn-off (GTO) devices in series stack

    International Nuclear Information System (INIS)

    Despe, O.

    1999-01-01

    A gate-turn-off (GTO) switch is under development at the Advanced Photon Source as a replacement for a thyratron switch in high power pulsed application. The high voltage in the application requires multiple GTOs connected in series. One component that is critical to the success of GTO operation is the gate drive circuit. The gate drive circuit has to provide fast high-current pulses to the GTO gate for fast turn-on and turn-off. It also has to be able to operate while floating at high voltage. This paper describes a gate drive circuit that meets these requirements

  17. Terahertz amplification in RTD-gated HEMTs with a grating-gate wave coupling topology

    Energy Technology Data Exchange (ETDEWEB)

    Condori Quispe, Hugo O.; Sensale-Rodriguez, Berardi [The University of Utah, Salt Lake City, Utah 84112 (United States); Encomendero-Risco, Jimy J.; Xing, Huili Grace [University of Notre Dame, Notre Dame, Indiana 46556 (United States); Cornell University, Ithaca, New York 14853 (United States)

    2016-08-08

    We theoretically analyze the operation of a terahertz amplifier consisting of a resonant-tunneling-diode gated high-electron-mobility transistor (RTD-gated HEMT) in a grating-gate topology. In these devices, the key element enabling substantial power gain is the efficient coupling of terahertz waves into and out of plasmons in the RTD-gated HEMT channel, i.e., the gain medium, via the grating-gate itself, part of the active device, rather than by an external antenna structure as discussed in previous works, therefore potentially enabling terahertz amplification with associated power gains >40 dB.

  18. Pulsed laser deposition of chalcogenide sulfides from multi- and single-component targets: the non-stoichiometric material transfer

    DEFF Research Database (Denmark)

    Schou, Jørgen; Ganskukh, Mungunshagai; Ettlinger, Rebecca Bolt

    2018-01-01

    , and the Cu content is also very low at low fluence from a single-component target. Above this threshold, the Cu content in the films increases almost linearly up to a value above the stoichiometric value, while the ratio of the concentration of the other metals Zn to Sn (Zn/Sn) remains constant. Films...

  19. Influence of restorative materials on color of implant-supported single crowns in esthetic zone: A spectrophotometric evaluation

    DEFF Research Database (Denmark)

    M., Peng; W.-J., Zhao; M., Hosseini

    2017-01-01

    Restorations of 98 implant-supported single crowns in anterior maxillary area were divided into 5 groups: zirconia abutment, titanium abutment, and gold/gold hue abutment with zirconia coping, respectively, and titanium abutment with metal coping as well as gold/gold hue abutment with metal copin...

  20. Gates Auto Door Car With Lights Modulated

    OpenAIRE

    Lina Carolina; Luyung Dinani, Skom, MMSi

    2002-01-01

    In scientific writing wi ll be explained about automatic gates with modulated headlights, where to find the car lights were adjusted by the relative frequency darker because of this background that the author alleviate human task in performing daily activities by using an automatic gate with the car lights modulated.

  1. Protected gates for topological quantum field theories

    Science.gov (United States)

    Beverland, Michael E.; Buerschaper, Oliver; Koenig, Robert; Pastawski, Fernando; Preskill, John; Sijher, Sumit

    2016-02-01

    We study restrictions on locality-preserving unitary logical gates for topological quantum codes in two spatial dimensions. A locality-preserving operation is one which maps local operators to local operators — for example, a constant-depth quantum circuit of geometrically local gates, or evolution for a constant time governed by a geometrically local bounded-strength Hamiltonian. Locality-preserving logical gates of topological codes are intrinsically fault tolerant because spatially localized errors remain localized, and hence sufficiently dilute errors remain correctable. By invoking general properties of two-dimensional topological field theories, we find that the locality-preserving logical gates are severely limited for codes which admit non-abelian anyons, in particular, there are no locality-preserving logical gates on the torus or the sphere with M punctures if the braiding of anyons is computationally universal. Furthermore, for Ising anyons on the M-punctured sphere, locality-preserving gates must be elements of the logical Pauli group. We derive these results by relating logical gates of a topological code to automorphisms of the Verlinde algebra of the corresponding anyon model, and by requiring the logical gates to be compatible with basis changes in the logical Hilbert space arising from local F-moves and the mapping class group.

  2. Protected gates for topological quantum field theories

    Energy Technology Data Exchange (ETDEWEB)

    Beverland, Michael E.; Pastawski, Fernando; Preskill, John [Institute for Quantum Information and Matter, California Institute of Technology, Pasadena, California 91125 (United States); Buerschaper, Oliver [Dahlem Center for Complex Quantum Systems, Freie Universität Berlin, 14195 Berlin (Germany); Koenig, Robert [Institute for Advanced Study and Zentrum Mathematik, Technische Universität München, 85748 Garching (Germany); Sijher, Sumit [Institute for Quantum Computing and Department of Applied Mathematics, University of Waterloo, Waterloo, Ontario N2L 3G1 (Canada)

    2016-02-15

    We study restrictions on locality-preserving unitary logical gates for topological quantum codes in two spatial dimensions. A locality-preserving operation is one which maps local operators to local operators — for example, a constant-depth quantum circuit of geometrically local gates, or evolution for a constant time governed by a geometrically local bounded-strength Hamiltonian. Locality-preserving logical gates of topological codes are intrinsically fault tolerant because spatially localized errors remain localized, and hence sufficiently dilute errors remain correctable. By invoking general properties of two-dimensional topological field theories, we find that the locality-preserving logical gates are severely limited for codes which admit non-abelian anyons, in particular, there are no locality-preserving logical gates on the torus or the sphere with M punctures if the braiding of anyons is computationally universal. Furthermore, for Ising anyons on the M-punctured sphere, locality-preserving gates must be elements of the logical Pauli group. We derive these results by relating logical gates of a topological code to automorphisms of the Verlinde algebra of the corresponding anyon model, and by requiring the logical gates to be compatible with basis changes in the logical Hilbert space arising from local F-moves and the mapping class group.

  3. Gate-tunable phase transitions in thin flakes of 1T-TaS2

    Science.gov (United States)

    Yu, Yijun; Yang, Fangyuan; Lu, Xiu Fang; Yan, Ya Jun; Cho, Yong-Heum; Ma, Liguo; Niu, Xiaohai; Kim, Sejoong; Son, Young-Woo; Feng, Donglai; Li, Shiyan; Cheong, Sang-Wook; Chen, Xian Hui; Zhang, Yuanbo

    2015-03-01

    The ability to tune material properties using gating by electric fields is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as the observation of gate electric-field-induced superconductivity and metal-insulator transitions. Here, we describe an ionic field-effect transistor (termed an iFET), in which gate-controlled Li ion intercalation modulates the material properties of layered crystals of 1T-TaS2. The strong charge doping induced by the tunable ion intercalation alters the energetics of various charge-ordered states in 1T-TaS2 and produces a series of phase transitions in thin-flake samples with reduced dimensionality. We find that the charge-density wave states in 1T-TaS2 collapse in the two-dimensional limit at critical thicknesses. Meanwhile, at low temperatures, the ionic gating induces multiple phase transitions from Mott-insulator to metal in 1T-TaS2 thin flakes, with five orders of magnitude modulation in resistance, and superconductivity emerges in a textured charge-density wave state induced by ionic gating. Our method of gate-controlled intercalation opens up possibilities in searching for novel states of matter in the extreme charge-carrier-concentration limit.

  4. Multi-gated field emitters for a micro-column

    International Nuclear Information System (INIS)

    Mimura, Hidenori; Kioke, Akifumi; Aoki, Toru; Neo, Yoichiro; Yoshida, Tomoya; Nagao, Masayoshi

    2011-01-01

    We have developed a multi-gated field emitter (FE) such as a quadruple-gated FE with a three-stacked electrode lens and a quintuple-gated FE with a four-stacked electrode lens. Both the FEs can focus the electron beam. However, the quintuple-gated FE has a stronger electron convergence than the quadruple-gated FE, and a beam crossover is clearly observed for the quintuple-gated FE.

  5. Top-gate pentacene-based organic field-effect transistor with amorphous rubrene gate insulator

    Science.gov (United States)

    Hiroki, Mizuha; Maeda, Yasutaka; Ohmi, Shun-ichiro

    2018-02-01

    The scaling of organic field-effect transistors (OFETs) is necessary for high-density integration and for this, OFETs with a top-gate configuration are required. There have been several reports of damageless lithography processes for organic semiconductor or insulator layers. However, it is still difficult to fabricate scaled OFETs with a top-gate configuration. In this study, the lift-off process and the device characteristics of the OFETs with a top-gate configuration utilizing an amorphous (α) rubrene gate insulator were investigated. We have confirmed that α-rubrene shows an insulating property, and its extracted linear mobility was 2.5 × 10‑2 cm2/(V·s). The gate length and width were 10 and 60 µm, respectively. From these results, the OFET with a top-gate configuration utilizing an α-rubrene gate insulator is promising for the high-density integration of scaled OFETs.

  6. High-fidelity quantum gates on quantum-dot-confined electron spins in low-Q optical microcavities

    Science.gov (United States)

    Li, Tao; Gao, Jian-Cun; Deng, Fu-Guo; Long, Gui-Lu

    2018-04-01

    We propose some high-fidelity quantum circuits for quantum computing on electron spins of quantum dots (QD) embedded in low-Q optical microcavities, including the two-qubit controlled-NOT gate and the multiple-target-qubit controlled-NOT gate. The fidelities of both quantum gates can, in principle, be robust to imperfections involved in a practical input-output process of a single photon by converting the infidelity into a heralded error. Furthermore, the influence of two different decay channels is detailed. By decreasing the quality factor of the present microcavity, we can largely increase the efficiencies of these quantum gates while their high fidelities remain unaffected. This proposal also has another advantage regarding its experimental feasibility, in that both quantum gates can work faithfully even when the QD-cavity systems are non-identical, which is of particular importance in current semiconductor QD technology.

  7. Gate engineered heterostructure junctionless TFET with Gaussian doping profile for ambipolar suppression and electrical performance improvement

    Science.gov (United States)

    Aghandeh, Hadi; Sedigh Ziabari, Seyed Ali

    2017-11-01

    This study investigates a junctionless tunnel field-effect transistor with a dual material gate and a heterostructure channel/source interface (DMG-H-JLTFET). We find that using the heterostructure interface improves device behavior by reducing the tunneling barrier width at the channel/source interface. Simultaneously, the dual material gate structure decreases ambipolar current by increasing the tunneling barrier width at the drain/channel interface. The performance of the device is analyzed based on the energy band diagram at on, off, and ambipolar states. Numerical simulations demonstrate improvements in ION, IOFF, ION/IOFF, subthreshold slope (SS), transconductance and cut-off frequency and suppressed ambipolar behavior. Next, the workfunction optimization of dual material gate is studied. It is found that if appropriate workfunctions are selected for tunnel and auxiliary gates, the JLTFET exhibits considerably improved performance. We then study the influence of Gaussian doping distribution at the drain and the channel on the ambipolar performance of the device and find that a Gaussian doping profile and a dual material gate structure remarkably reduce ambipolar current. Gaussian doped DMG-H-JLTFET, also exhibits enhanced IOFF, ION/IOFF, SS and a low threshold voltage without degrading IOFF.

  8. A model for high temperature creep of single crystal superalloys based on nonlocal damage and viscoplastic material behavior

    Science.gov (United States)

    Trinh, B. T.; Hackl, K.

    2014-07-01

    A model for high temperature creep of single crystal superalloys is developed, which includes constitutive laws for nonlocal damage and viscoplasticity. It is based on a variational formulation, employing potentials for free energy, and dissipation originating from plasticity and damage. Evolution equations for plastic strain and damage variables are derived from the well-established minimum principle for the dissipation potential. The model is capable of describing the different stages of creep in a unified way. Plastic deformation in superalloys incorporates the evolution of dislocation densities of the different phases present. It results in a time dependence of the creep rate in primary and secondary creep. Tertiary creep is taken into account by introducing local and nonlocal damage. Herein, the nonlocal one is included in order to model strain localization as well as to remove mesh dependence of finite element calculations. Numerical results and comparisons with experimental data of the single crystal superalloy LEK94 are shown.

  9. Materials process and applications of single grain (RE)-Ba-Cu-O bulk high-temperature superconductors

    Energy Technology Data Exchange (ETDEWEB)

    Li Beizhan; Zhou Difan; Xu Kun; Hara, Shogo; Tsuzuki, Keita; Miki, Motohiro; Felder, Brice; Deng Zigang [Laboratory of Applied Physics, Department of Marine Electronics and Mechanical Engineering, Tokyo University of Marine Science and Technology (TUMSAT), 2-1-6, Etchu-jima, Koto-ku, Tokyo 135-8533 (Japan); Izumi, Mitsuru, E-mail: izumi@kaiyodai.ac.jp [Laboratory of Applied Physics, Department of Marine Electronics and Mechanical Engineering, Tokyo University of Marine Science and Technology (TUMSAT), 2-1-6, Etchu-jima, Koto-ku, Tokyo 135-8533 (Japan)

    2012-11-20

    This paper reviews recent advances in the melt process of (RE)-Ba-Cu-O [(RE)BCO, where RE represents a rare earth element] single grain high-temperature superconductors (HTSs), bulks and its applications. The efforts on the improvement of the magnetic flux pinning with employing the top-seeded melt-growth process technique and using a seeded infiltration and growth process are discussed. Which including various chemical doping strategies and controlled pushing effect based on the peritectic reaction of (RE)BCO. The typical experiment results, such as the largest single domain bulk, the clear TEM observations and the significant critical current density, are summarized together with the magnetization techniques. Finally, we highlight the recent prominent progress of HTS bulk applications, including Maglev, flywheel, power device, magnetic drug delivery system and magnetic resonance devices.

  10. Materials process and applications of single grain (RE)-Ba-Cu-O bulk high-temperature superconductors

    Science.gov (United States)

    Li, Beizhan; Zhou, Difan; Xu, Kun; Hara, Shogo; Tsuzuki, Keita; Miki, Motohiro; Felder, Brice; Deng, Zigang; Izumi, Mitsuru

    2012-11-01

    This paper reviews recent advances in the melt process of (RE)-Ba-Cu-O [(RE)BCO, where RE represents a rare earth element] single grain high-temperature superconductors (HTSs), bulks and its applications. The efforts on the improvement of the magnetic flux pinning with employing the top-seeded melt-growth process technique and using a seeded infiltration and growth process are discussed. Which including various chemical doping strategies and controlled pushing effect based on the peritectic reaction of (RE)BCO. The typical experiment results, such as the largest single domain bulk, the clear TEM observations and the significant critical current density, are summarized together with the magnetization techniques. Finally, we highlight the recent prominent progress of HTS bulk applications, including Maglev, flywheel, power device, magnetic drug delivery system and magnetic resonance devices.

  11. Elemental Characterization of Single-Wall Carbon Nanotube Certified Reference Material by Neutron and Prompt gamma Activation Analysis

    Czech Academy of Sciences Publication Activity Database

    Kučera, Jan; Bennett, J. W.; Oflaz, R.; Paul, R. L.; De Nadai Fernandes, E. A.; Kubešová, Marie; Bacchi, M. A.; Stopic, A. J.; Sturgeon, R. E.; Grinberg, P.

    2015-01-01

    Roč. 87, č. 7 (2015), s. 3699-3705 ISSN 0003-2700 R&D Projects: GA ČR(CZ) GBP108/12/G108; GA MŠk LM2011019 Institutional support: RVO:61389005 Keywords : Neutron Activation Analyses * nanotechnology * Carbon nanotubes * Chemical activation * Single-walled carbon nanotubes (SWCN) Subject RIV: CB - Analytical Chemistry, Separation Impact factor: 5.886, year: 2015

  12. Purinergic control of lysenin's transport and voltage-gating properties.

    Science.gov (United States)

    Bryant, Sheenah; Shrestha, Nisha; Carnig, Paul; Kosydar, Samuel; Belzeski, Philip; Hanna, Charles; Fologea, Daniel

    2016-09-01

    Lysenin, a pore-forming protein extracted from the coelomic fluid of the earthworm Eisenia foetida, manifests cytolytic activity by inserting large conductance pores in host membranes containing sphingomyelin. In the present study, we found that adenosine phosphates control the biological activity of lysenin channels inserted into planar lipid membranes with respect to their macroscopic conductance and voltage-induced gating. Addition of ATP, ADP, or AMP decreased the macroscopic conductance of lysenin channels in a concentration-dependent manner, with ATP being the most potent inhibitor and AMP the least. ATP removal from the bulk solutions by buffer exchange quickly reinstated the macroscopic conductance and demonstrated reversibility. Single-channel experiments pointed to an inhibition mechanism that most probably relies on electrostatic binding and partial occlusion of the channel-conducting pathway, rather than ligand gating induced by the highly charged phosphates. The Hill analysis of the changes in macroscopic conduction as a function of the inhibitor concentration suggested cooperative binding as descriptive of the inhibition process. Ionic screening significantly reduced the ATP inhibitory efficacy, in support of the electrostatic binding hypothesis. In addition to conductance modulation, purinergic control over the biological activity of lysenin channels has also been observed to manifest as changes of the voltage-induced gating profile. Our analysis strongly suggests that not only the inhibitor's charge but also its ability to adopt a folded conformation may explain the differences in the observed influence of ATP, ADP, and AMP on lysenin's biological activity.

  13. Quantum gates by inverse engineering of a Hamiltonian

    Science.gov (United States)

    Santos, Alan C.

    2018-01-01

    Inverse engineering of a Hamiltonian (IEH) from an evolution operator is a useful technique for the protocol of quantum control with potential applications in quantum information processing. In this paper we introduce a particular protocol to perform IEH and we show how this scheme can be used to implement a set of quantum gates by using minimal quantum resources (such as entanglement, interactions between more than two qubits or auxiliary qubits). Remarkably, while previous protocols request three-qubit interactions and/or auxiliary qubits to implement such gates, our protocol requires just two-qubit interactions and no auxiliary qubits. By using this approach we can obtain a large class of Hamiltonians that allow us to implement single and two-qubit gates necessary for quantum computation. To conclude this article we analyze the performance of our scheme against systematic errors related to amplitude noise, where we show that the free parameters introduced in our scheme can be useful for enhancing the robustness of the protocol against such errors.

  14. ON the Nature of Ionic Liquid Gating of La2−xSrxCuO4

    Directory of Open Access Journals (Sweden)

    Hasan Atesci

    2018-02-01

    Full Text Available Ionic liquids have recently been used as means of modulating the charge carrier properties of cuprates. The mechanism behind it, however, is still a matter of debate. In this paper we report experiments on ionic liquid gated ultrathin La2−xSrxCuO4 films. Our results show that the electrostatic part of gating has limited influence in the conductance of the cuprate in the gate voltage range of 0 to − 2 V. A non-electrostatic mechanism takes over for gate voltages below − 2 V. This mechanism most likely changes the oxygen concentration of the film. The results presented are in line with previous X-ray based studies on ionic liquid gating induced oxygenation of the cuprate materials YBa2Cu3O7−x and La2−xSrxCuO4.

  15. Use of Modulus Mapping Technique to Investigate Cross-sectional Material Properties of Extracted Single Human Trabeculae

    Czech Academy of Sciences Publication Activity Database

    Jiroušek, Ondřej; Kytýř, Daniel; Zlámal, Petr; Doktor, Tomáš; Šepitka, J.; Lukeš, J.

    2012-01-01

    Roč. 106, č. 3 (2012), s. 442-445 ISSN 0009-2770 R&D Projects: GA ČR(CZ) GAP105/10/2305 Institutional support: RVO:68378297 Keywords : modulus mapping * trabecular bone * nanoindentation * micromechanical testing Subject RIV: JJ - Other Materials Impact factor: 0.453, year: 2012 http://www.chemicke-listy.cz/common/content-issue_s3-volume_106-year_2012.html

  16. Ion-beam modification of 2-D materials - single implant atom analysis via annular dark-field electron microscopy

    Energy Technology Data Exchange (ETDEWEB)

    Bangert, U., E-mail: Ursel.Bangert@ul.ie [Department of Physics, School of Sciences & Bernal Institute, University of Limerick, Limerick (Ireland); Stewart, A.; O’Connell, E.; Courtney, E. [Department of Physics, School of Sciences & Bernal Institute, University of Limerick, Limerick (Ireland); Ramasse, Q.; Kepaptsoglou, D. [SuperSTEM Laboratory, STFC Daresbury Campus, Daresbury WA4 4AD (United Kingdom); Hofsäss, H.; Amani, J. [II. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-PLatz 1, 37077 Göttingen (Germany); Tu, J.-S.; Kardynal, B. [Peter Grünberg Institut 9, Forschungszentrum Jülich, 52425 Jülich (Germany)

    2017-05-15

    Functionalisation of two-dimensional (2-D) materials via low energy ion implantation could open possibilities for fabrication of devices based on such materials. Nanoscale patterning and/or electronically doping can thus be achieved, compatible with large scale integrated semiconductor technologies. Using atomic resolution High Angle Annular Dark Field (HAADF) scanning transmission electron microscopy supported by image simulation, we show that sites and chemical nature of individual implants/ dopants in graphene, as well as impurities in hBN, can uniquely and directly be identified on grounds of their position and their image intensity in accordance with predictions from Z-contrast theories. Dopants in graphene (e.g., N) are predominantly substitutional. In other 2-Ds, e.g. dichalcogenides, the situation is more complicated since implants can be embedded in different layers and substitute for different elements. Possible configurations of Se-implants in MoS{sub 2} are discussed and image contrast calculations performed. Implants substituting for S in the top or bottom layer can undoubtedly be identified. We show, for the first time, using HAADF contrast measurement that successful Se-integration into MoS{sub 2} can be achieved via ion implantation, and we demonstrate the possibility of HAADF image contrast measurements for identifying impurities and dopants introduced into in 2-Ds. - Highlights: • Ion implantation of 2-dimensional materials. • Targeted and controlled functionalisation of graphene and 2-D dichalcocenides. • Atomic resolution High Angle Dark Field scanning transmission electron microscopy. • Determination of atomic site and elemental nature of dopants in 2-D materials. • Quantitative information from Z-contrast images.

  17. Challenge in optoelectronic duplex switches: a red emission large-size single crystal and a unidirectional flexible thin film of a hybrid multifunctional material.

    Science.gov (United States)

    Zhu, Xiao; Zhang, Wan-Ying; Chen, Cheng; Ye, Qiong; Fu, Da-Wei

    2018-02-13

    Photoelectric dual-function features in bulk crystals or flexible thin films make them excellent candidates for important and thriving applications in storage, sensing and other information fields. Based on superior advantages such as easy and environmentally friendly processing, mechanical flexibility, and ability to fabricate films and bulk single crystals; we designed a type of molecular material with a photoelectric multi-function switch, [N(NH 2 CH 2 CH 2 ) 3 ] 2 Mn 2 Cl 12 (compound 1), which exhibits intriguing temperature-dependent dielectric and red emission switchable characteristics. This material perfectly explains the advantages of molecular materials, while 1 can also be used to fabricate a transparent unidirectional film with ultra-flexibility. Moreover, this material shows the highest record in signal contrast of ∼5 (exceeding all the known molecular materials/crystalline switches, revealing its potential to obtain high-efficiency signal-to-noise ratio), sensitive dielectric bi-stability, and excellent switching anti fatigue. These features give it a high application value in integrated circuits, optoelectronic seamless integration devices and flexible multifunctional devices.

  18. Effect of the purity of starting materials on the growth and properties of potassium dihydrogen phosphate single crystals – A comparative study

    Energy Technology Data Exchange (ETDEWEB)

    Rajesh, P., E-mail: rajeshp@ssn.edu.in [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603 110 (India); Charoen In, Urit [Department of Physics, Faculty of Science, Mahasarakham University, Mahasarakham 44150 (Thailand); Manyum, Prapun [School of Physics and NANOTEC-SUT Center of Excellence on Advanced Functional Nanomaterials, Suranaree University of Technology, Nakhon Ratchasima, Muang 30000 (Thailand); Ramasamy, P. [Centre for Crystal Growth, SSN College of Engineering, Kalavakkam 603 110 (India)

    2014-11-15

    Highlights: • Bulk size KDP crystal has been grown with higher growth rate. • Systematic study on the effect of starting materials has been done. • Crystalline perfection is maintained in the entire crystal. - Abstract: A systematic study on the effect of purity of starting materials on the growth and properties of potassium dihydrogen phosphate single crystals is crucial for the future study of the material for nonlinear optical applications. Potassium dihydrogen phosphate crystals were grown using high pure (99.999%) and ordinary (99.9%) starting raw materials using slow cooling method in identical conditions. Their optical transparency and crystalline perfection are studied by UV and high resolution X-ray diffraction analyses respectively. The results are checked with the help of etching analyses. The full width at half maximum is 8″ which is close to that expected from the plane wave theory of dynamical X-ray diffraction for an ideally perfect crystal. Results of those studies are correlated with each other. The quantitative results show that the raw material plays an important role in the growth of good quality crystals.

  19. Computer-automated tuning of semiconductor double quantum dots into the single-electron regime

    Energy Technology Data Exchange (ETDEWEB)

    Baart, T. A.; Vandersypen, L. M. K. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Kavli Institute of Nanoscience, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Eendebak, P. T. [QuTech, Delft University of Technology, P.O. Box 5046, 2600 GA Delft (Netherlands); Netherlands Organisation for Applied Scientific Research (TNO), P.O. Box 155, 2600 AD Delft (Netherlands); Reichl, C.; Wegscheider, W. [Solid State Physics Laboratory, ETH Zürich, 8093 Zürich (Switzerland)

    2016-05-23

    We report the computer-automated tuning of gate-defined semiconductor double quantum dots in GaAs heterostructures. We benchmark the algorithm by creating three double quantum dots inside a linear array of four quantum dots. The algorithm sets the correct gate voltages for all the gates to tune the double quantum dots into the single-electron regime. The algorithm only requires (1) prior knowledge of the gate design and (2) the pinch-off value of the single gate T that is shared by all the quantum dots. This work significantly alleviates the user effort required to tune multiple quantum dot devices.

  20. Determination of Aloin A and Aloin B in Aloe vera Raw Materials and Finished Products by High-Performance Liquid Chromatography: Single-Laboratory Validation.

    Science.gov (United States)

    Brown, Paula N; Yu, Ronan; Kuan, Chiow Hui; Finley, Jamie; Mudge, Elizabeth M; Dentali, Steven

    2014-01-01

    A single-laboratory validation (SLV) was conducted on an HPLC method for the detection and quantification of aloin A and aloin B in Aloe vera raw materials and finished products. An extraction procedure using sonication with an acidified solvent was used for solid test materials while liquid test materials only required dilution, if necessary, prior to filtration and analysis. Separation was achieved using a fused core C18 column in 18 min under isocratic elution conditions allowing for a single analyte (aloin A) calibration curve to quantify both aloins. Adequate chromatographic resolution (Rs ≥ 1) was achieved for aloin A and aloin B. The calibration curves for aloin A exhibited coefficients of determination (r(2)) of ≥ 99.9% over the linear range of 0.3-50 μg/mL. The LOD values were 0.092 and 0.087 μg/mL, and LOQ 0.23 and 0.21 μg/mL for aloin A and aloin B, respectively. Repeatability studies were performed on nine test materials on each of 3 separate days, with five of the test materials determined to be above the LOQ having repeatability RSD (RSDr) values ranging from 0.61 to 6.30%. Method accuracy was determined through a spike recovery study on both liquid and solid matrixes at three different levels: low, medium, and high. For both aloins, the recovery in the liquid matrix ranged from 92.7 to 106.3% with an RSDr of 0.15 to 4.30%, while for the solid matrix, the recovery ranged from 84.4 to 108.9% with an RSDr of 0.23 to 3.84%. Based on the results of the SLV study, it is recommended that this method be evaluated for reproducibility through a collaborative study.

  1. High magnetic field trapping in monolithic single-grain YBa2Cu3O(7-delta) bulk materials

    Science.gov (United States)

    Gao, L.; Xue, Y. Y.; Ramirez, D.; Huang, Z. J.; Meng, R. L.; Chu, C. W.

    1993-01-01

    Results of our study on high magnetic field trapping in unirradiated, high quality monolithic single-grain YBa2Cu3O(7-delta) disks are reported. A record high 4 T trapped field at the surface of the unirradiated disks is observed. However, below 11 K, large flux avalanches caused by thermal instability severely limit the remnant trapped field. Therefore, flux avalanche, rather than Jc x d, dictates the maximum trapped field at low temperatures. To overcome this problem, a strong high temperature superconductor trapped field magnet is proposed. A novel application of the avalanche effect is also mentioned.

  2. Efficient one- and two-qubit pulsed gates for an oscillator-stabilized Josephson qubit

    International Nuclear Information System (INIS)

    Brito, Frederico; DiVincenzo, David P; Koch, Roger H; Steffen, Matthias

    2008-01-01

    We present theoretical schemes for performing high-fidelity one- and two-qubit pulsed gates for a superconducting flux qubit. The 'IBM qubit' consists of three Josephson junctions, three loops and a superconducting transmission line. Assuming a fixed inductive qubit-qubit coupling, we show that the effective qubit-qubit interaction is tunable by changing the applied fluxes, and can be made negligible, allowing one to perform high-fidelity single qubit gates. Our schemes are tailored to alleviate errors due to 1/f noise; we find gates with only 1% loss of fidelity due to this source, for pulse times in the range of 20-30 ns for one-qubit gates (Z rotations, Hadamard) and 60 ns for a two-qubit gate (controlled-Z). Our relaxation and dephasing time estimates indicate a comparable loss of fidelity from this source. The control of leakage plays an important role in the design of our shaped pulses, preventing shorter pulse times. However, we have found that imprecision in the control of the quantum phase plays a major role in the limitation of the fidelity of our gates

  3. Implementation of quantum logic gates using coupled Bose-Einstein condensates

    Energy Technology Data Exchange (ETDEWEB)

    Luiz, F.S. [Universidade Federal de Sao Carlos (UFSCar), Sao Carlos, SP (Brazil). Departamento de Fisica; Duzzioni, E.I. [Universidade Federal de Santa Catarina (UFSC), Florianopolis, SC (Brazil). Departamento de Fisica; Sanz, L., E-mail: lsanz@infis.ufu.br [Universidade Federal de Uberlandia (UFU), MG (Brazil). Instituto de Fisica

    2015-10-15

    In this work, we are interested in the implementation of single-qubit gates on coupled Bose-Einstein condensates (BECs). The system, a feasible candidate for a qubit, consists of condensed atoms in different hyperfine levels coupled by a two-photon transition. It is well established that the dynamics of coupled BECs can be described by the two-mode Hamiltonian that takes into account the confinement potential of the trap and the effects of collisions associated with each condensate. Other effects, such as collisions between atoms belonging to different BECs and detuning, are included in this approach. We demonstrate how to implement two types of quantum logic gates: population-transfer gates (NOT, Ŷ, and Hadamard), which require a population inversion between hyperfine levels, and phase gates (Z{sup ^}, Ŝ and T{sup ^}), which require self-trapping. We also discuss the experimental feasibility by evaluating the robustness of quantum gates against variations of physical parameters outside of the ideal conditions for the implementation of each quantum logic gate. (author)

  4. Photon-Mediated Quantum Gate between Two Neutral Atoms in an Optical Cavity

    Science.gov (United States)

    Welte, Stephan; Hacker, Bastian; Daiss, Severin; Ritter, Stephan; Rempe, Gerhard

    2018-02-01

    Quantum logic gates are fundamental building blocks of quantum computers. Their integration into quantum networks requires strong qubit coupling to network channels, as can be realized with neutral atoms and optical photons in cavity quantum electrodynamics. Here we demonstrate that the long-range interaction mediated by a flying photon performs a gate between two stationary atoms inside an optical cavity from which the photon is reflected. This single step executes the gate in 2 μ s . We show an entangling operation between the two atoms by generating a Bell state with 76(2)% fidelity. The gate also operates as a cnot. We demonstrate 74.1(1.6)% overlap between the observed and the ideal gate output, limited by the state preparation fidelity of 80.2(0.8)%. As the atoms are efficiently connected to a photonic channel, our gate paves the way towards quantum networking with multiqubit nodes and the distribution of entanglement in repeater-based long-distance quantum networks.

  5. Kinetic contributions to gating by interactions unique to N-methyl-D-aspartate (NMDA) receptors.

    Science.gov (United States)

    Borschel, William F; Cummings, Kirstie A; Tindell, LeeAnn K; Popescu, Gabriela K

    2015-10-30

    Among glutamate-gated channels, NMDA receptors produce currents that subside with unusually slow kinetics, and this feature is essential to the physiology of central excitatory synapses. Relative to the homologous AMPA and kainate receptors, NMDA receptors have additional intersubunit contacts in the ligand binding domain that occur at both conserved and non-conserved sites. We examined GluN1/GluN2A single-channel currents with kinetic analyses and modeling to probe these class-specific intersubunit interactions for their role in glutamate binding and receptor gating. We found that substitutions that eliminate such interactions at non-conserved sites reduced stationary gating, accelerated deactivation, and imparted sensitivity to aniracetam, an AMPA receptor-selective positive modulator. Abolishing unique contacts at conserved sites also reduced stationary gating and accelerated deactivation. These results show that contacts specific to NMDA receptors, which brace the heterodimer interface within the ligand binding domain, stabilize actively gating receptor conformations and result in longer bursts and slower deactivations. They support the view that the strength of the heterodimer interface modulates gating in both NMDA and non-NMDA receptors and that unique interactions at this interface are responsible in part for basic differences between the kinetics of NMDA and non-NMDA currents at glutamatergic synapses. © 2015 by The American Society for Biochemistry and Molecular Biology, Inc.

  6. Kinetic Contributions to Gating by Interactions Unique to N-methyl-d-aspartate (NMDA) Receptors*

    Science.gov (United States)

    Borschel, William F.; Cummings, Kirstie A.; Tindell, LeeAnn K.; Popescu, Gabriela K.

    2015-01-01

    Among glutamate-gated channels, NMDA receptors produce currents that subside with unusually slow kinetics, and this feature is essential to the physiology of central excitatory synapses. Relative to the homologous AMPA and kainate receptors, NMDA receptors have additional intersubunit contacts in the ligand binding domain that occur at both conserved and non-conserved sites. We examined GluN1/GluN2A single-channel currents with kinetic analyses and modeling to probe these class-specific intersubunit interactions for their role in glutamate binding and receptor gating. We found that substitutions that eliminate such interactions at non-conserved sites reduced stationary gating, accelerated deactivation, and imparted sensitivity to aniracetam, an AMPA receptor-selective positive modulator. Abolishing unique contacts at conserved sites also reduced stationary gating and accelerated deactivation. These results show that contacts specific to NMDA receptors, which brace the heterodimer interface within the ligand binding domain, stabilize actively gating receptor conformations and result in longer bursts and slower deactivations. They support the view that the strength of the heterodimer interface modulates gating in both NMDA and non-NMDA receptors and that unique interactions at this interface are responsible in part for basic differences between the kinetics of NMDA and non-NMDA currents at glutamatergic synapses. PMID:26370091

  7. Photon-Mediated Quantum Gate between Two Neutral Atoms in an Optical Cavity

    Directory of Open Access Journals (Sweden)

    Stephan Welte

    2018-02-01

    Full Text Available Quantum logic gates are fundamental building blocks of quantum computers. Their integration into quantum networks requires strong qubit coupling to network channels, as can be realized with neutral atoms and optical photons in cavity quantum electrodynamics. Here we demonstrate that the long-range interaction mediated by a flying photon performs a gate between two stationary atoms inside an optical cavity from which the photon is reflected. This single step executes the gate in 2  μs. We show an entangling operation between the two atoms by generating a Bell state with 76(2% fidelity. The gate also operates as a cnot. We demonstrate 74.1(1.6% overlap between the observed and the ideal gate output, limited by the state preparation fidelity of 80.2(0.8%. As the atoms are efficiently connected to a photonic channel, our gate paves the way towards quantum networking with multiqubit nodes and the distribution of entanglement in repeater-based long-distance quantum networks.

  8. Growth, crystalline perfection, spectral and optical characterization of a novel optical material: l-tryptophan p-nitrophenol trisolvate single crystal

    Science.gov (United States)

    Sivakumar, N.; Srividya, J.; Mohana, J.; Anbalagan, G.

    2015-03-01

    l-tryptophan p-nitrophenol trisolvate (LTPN), an organic nonlinear optical material was synthesized using ethanol-water mixed solvent and the crystals were grown by a slow solvent evaporation method. The crystal structure and morphology were studied by single crystal X-ray diffraction analysis. The crystalline perfection of the LTPN crystal was analyzed by high-resolution X-ray diffraction study. The molecular structure of the crystal was confirmed by observing the various characteristic functional groups of the material using vibrational spectroscopy. The cut-off wavelength, optical transmission, refractive index and band gap energy were determined using UV-visible data. The variation of refractive index with wavelength shows the normal behavior. The second harmonic generation of the crystal was confirmed and the efficiency was measured using Kurtz Perry powder method. Single and multiple shot methods were employed to measure surface laser damage of the crystal. The photoluminescence spectral study revealed that the emission may be associated with the radiative recombination of trapped electrons and holes. Microhardness measurements revealed that LTPN belongs to a soft material category.

  9. Measurements of the elastic stiffness constants of single-crystal SmCo5 and of liquid-phase sintered SmCo5 permanent magnet material

    International Nuclear Information System (INIS)

    Doane, D.A.

    1977-01-01

    The five elastic stiffness constants were determined for both single-crystal SmCo 5 and for the commercially processed liquid-phase sintered (LPS) SmCo 5 permanent magnet material. The LPS material is an aligned polycrystalline aggregate of SmCo 5 crystallites oriented so that their magnetically easy c axes are approximately parallel. The elastic constants were obtained from the velocities of propagation of ultrasound in various directions in samples of known thickness and density. For the single crystal, the room-temperature values of the constants (in units of 10 12 dyn/cm 2 ) are c 11 =1.968 +- 2%, c 12 =1.032 +- 4%, c 13 =1.049 +- 4%, c 33 =2.398 +- 2%, and c 44 =0.483 +- 2%, and for the LPS permanent magnet material, c 11 =1.330 +- 2%, c 12 =0.616 +- 5%, c 13 =0.485 +- 5%, c 33 =1.659 +- 2%, and c 44 =0.419 +- 2%. The decrease in elastic constants in SmCo 5 relative to cobalt can be related qualitatively to a corresponding decrease in the number of nearest-neighbor cobalt bonds in SmCo 5

  10. Influence of Restorative Materials on Color of Implant-Supported Single Crowns in Esthetic Zone: A Spectrophotometric Evaluation

    Science.gov (United States)

    Zhao, Wei-Jie; Hosseini, Mandana; Zhou, Wen-Juan; Xiao, Ting

    2017-01-01

    Restorations of 98 implant-supported single crowns in anterior maxillary area were divided into 5 groups: zirconia abutment, titanium abutment, and gold/gold hue abutment with zirconia coping, respectively, and titanium abutment with metal coping as well as gold/gold hue abutment with metal coping. A reflectance spectrophotometer was used to evaluate the color difference between the implant crowns and contralateral/neighboring teeth, as well as the color difference between the peri-implant soft tissue and the natural marginal mucosa. The mucosal discoloration score was used for subjective evaluation of the esthetic outcome of soft tissue around implant-supported single crowns in the anterior zone, and the crown color match score was used for subjective evaluation of the esthetic outcome of implant-supported restoration. ANOVA analysis was used to compare the differences among groups and Spearman correlation was used to test the relationships. A gold/gold hue abutment with zirconia coping was the best choice for an esthetic crown and the all-ceramic combination was the best for peri-implant soft tissue. Significant correlation was found between the spectrophotometric color difference of peri-implant soft tissue and mucosal discoloration score, while no significant correlation was found between the total spectrophotometric color difference of implant crown and crown color match score. PMID:29349075

  11. Influence of Restorative Materials on Color of Implant-Supported Single Crowns in Esthetic Zone: A Spectrophotometric Evaluation

    Directory of Open Access Journals (Sweden)

    Min Peng

    2017-01-01

    Full Text Available Restorations of 98 implant-supported single crowns in anterior maxillary area were divided into 5 groups: zirconia abutment, titanium abutment, and gold/gold hue abutment with zirconia coping, respectively, and titanium abutment with metal coping as well as gold/gold hue abutment with metal coping. A reflectance spectrophotometer was used to evaluate the color difference between the implant crowns and contralateral/neighboring teeth, as well as the color difference between the peri-implant soft tissue and the natural marginal mucosa. The mucosal discoloration score was used for subjective evaluation of the esthetic outcome of soft tissue around implant-supported single crowns in the anterior zone, and the crown color match score was used for subjective evaluation of the esthetic outcome of implant-supported restoration. ANOVA analysis was used to compare the differences among groups and Spearman correlation was used to test the relationships. A gold/gold hue abutment with zirconia coping was the best choice for an esthetic crown and the all-ceramic combination was the best for peri-implant soft tissue. Significant correlation was found between the spectrophotometric color difference of peri-implant soft tissue and mucosal discoloration score, while no significant correlation was found between the total spectrophotometric color difference of implant crown and crown color match score.

  12. Calibration of submerged multi-sluice gates

    Directory of Open Access Journals (Sweden)

    Mohamed F. Sauida

    2014-09-01

    The main objective of this work is to study experimentally and verify empirically the different parameters affecting the discharge through submerged multiple sluice gates (i.e., the expansion ratios, gates operational management, etc.. Using multiple regression analysis of the experimental results, a general equation for discharge coefficient is developed. The results show, that the increase in the expansion ratio and the asymmetric operation of gates, give higher values for the discharge coefficient. The obtained predictions of the discharge coefficient using the developed equations are compared to the experimental data. The present developed equations showed good consistency and high accuracy.

  13. A class of quantum gate entanglers

    International Nuclear Information System (INIS)

    Heydari, Hoshang

    2010-01-01

    We construct quantum gate entanglers for different classes of multipartite states based on the definition of W and GHZ concurrence classes. First, we review the basic construction of concurrence classes based on the orthogonal complement of a positive operator valued measure (POVM) on quantum phase. Then, we construct quantum gate entanglers for different classes of multi-qubit states. In particular, we show that these operators can entangle multipartite states if they satisfy some conditions for W and GHZ classes of states. Finally, we explicitly give the W class and GHZ classes of quantum gate entanglers for four-qubit states.

  14. Resonantly driven CNOT gate for electron spins

    Science.gov (United States)

    Zajac, D. M.; Sigillito, A. J.; Russ, M.; Borjans, F.; Taylor, J. M.; Burkard, G.; Petta, J. R.

    2018-01-01

    To build a universal quantum computer—the kind that can handle any computational task you throw at it—an essential early step is to demonstrate the so-called CNOT gate, which acts on two qubits. Zajac et al. built an efficient CNOT gate by using electron spin qubits in silicon quantum dots, an implementation that is especially appealing because of its compatibility with existing semiconductor-based electronics (see the Perspective by Schreiber and Bluhm). To showcase the potential, the authors used the gate to create an entangled quantum state called the Bell state.

  15. Stay vane and wicket gate relationship study

    Energy Technology Data Exchange (ETDEWEB)

    None, None

    2005-01-19

    This report evaluates potential environmental and performance gains that can be achieved in a Kaplan turbine through non-structural modifications to stay vane and wicket gate assemblies. This summary is based primarily on data and conclusions drawn from models and studies of Lower Granite Dam. Based on this investigation, the study recommends (1) a proof of concept at Lower Granite Dam to establish predicted improvements for the existing turbine and to further refine the stay vane wicket gate designs for fish passage; and (2) consideration of the stay vane wicket gate systems in any future turbine rehabilitation studies.

  16. Gate A: changes to opening hours

    CERN Multimedia

    2015-01-01

    Due to maintenance work, the opening hours of Gate A (near Reception) will be modified between Monday, 13 and Friday, 17 April 2015.   During this period, the gate will be open to vehicles between 7 a.m. and 9.30 a.m., then between 4.30 p.m. and 7 p.m. It will be completely closed to traffic between 9.30 a.m. and 4.30 p.m. Pedestrians and cyclists may continue to use the gate. We apologise for any inconvenience and thank you for your understanding.

  17. Getting started with FortiGate

    CERN Document Server

    Fabbri, Rosato

    2013-01-01

    This book is a step-by-step tutorial that will teach you everything you need to know about the deployment and management of FortiGate, including high availability, complex routing, various kinds of VPN working, user authentication, security rules and controls on applications, and mail and Internet access.This book is intended for network administrators, security managers, and IT pros. It is a great starting point if you have to administer or configure a FortiGate unit, especially if you have no previous experience. For people that have never managed a FortiGate unit, the book helpfully walks t

  18. Computer simulation of ion channel gating: the M(2) channel of influenza A virus in a lipid bilayer

    Science.gov (United States)

    Schweighofer, K. J.; Pohorille, A.

    2000-01-01

    The transmembrane fragment of the influenza virus M(2) protein forms a homotetrameric channel that transports protons. In this paper, we use molecular dynamics simulations to help elucidate the mechanism of channel gating by four histidines that occlude the channel lumen in the closed state. We test two competing hypotheses. In the "shuttle" mechanism, the delta nitrogen atom on the extracellular side of one histidine is protonated by the incoming proton, and, subsequently, the proton on the epsilon nitrogen atom is released on the opposite side. In the "water-wire" mechanism, the gate opens because of electrostatic repulsion between four simultaneously biprotonated histidines. This allows for proton transport along the water wire that penetrates the gate. For each system, composed of the channel embedded in a hydrated phospholipid bilayer, a 1.3-ns trajectory was obtained. It is found that the states involved in the shuttle mechanism, which contain either single-protonated histidines or a mixture of single-protonated histidines plus one biprotonated residue, are stable during the simulations. Furthermore, the orientations and dynamics of water molecules near the gate are conducive to proton transfer. In contrast, the fully biprotonated state is not stable. Additional simulations show that if only two histidines are biprotonated, the channel deforms but the gate remains closed. These results support the shuttle mechanism but not the gate-opening mechanism of proton gating in M(2).

  19. How voltage-gated calcium channels gate forms of homeostatic synaptic plasticity

    Directory of Open Access Journals (Sweden)

    C. Andrew eFrank

    2014-02-01

    Full Text Available Throughout life, animals face a variety of challenges such as developmental growth, the presence of toxins, or changes in temperature. Neuronal circuits and synapses respond to challenges by executing an array of neuroplasticity paradigms. Some paradigms allow neurons to up- or downregulate activity outputs, while countervailing ones ensure that outputs remain within appropriate physiological ranges. A growing body of evidence suggests that homeostatic synaptic plasticity (HSP is critical in the latter case. Voltage-gated calcium channels gate forms of HSP. Presynaptically, the aggregate data show that when synapse activity is weakened, homeostatic signaling systems can act to correct impairments, in part by increasing calcium influx through presynaptic CaV2-type channels. Increased calcium influx is often accompanied by parallel increases in the size of active zones and the size of the readily releasable pool of presynaptic vesicles. These changes coincide with homeostatic enhancements of neurotransmitter release. Postsynaptically, there is a great deal of evidence that reduced network activity and loss of calcium influx through CaV1-type calcium channels also results in adaptive homeostatic signaling. Some adaptations drive presynaptic enhancements of vesicle pool size and turnover rate via retrograde signaling, as well as de novo insertion of postsynaptic neurotransmitter receptors. Enhanced calcium influx through CaV1 after network activation or single cell stimulation can elicit the opposite response – homeostatic depression via removal of excitatory receptors.There exist intriguing links between HSP and calcium channelopathies – such as forms of epilepsy, migraine, ataxia, and myasthenia. The episodic nature of some of these disorders suggests alternating periods of stable and unstable function. Uncovering information about how calcium channels are regulated in the context of HSP could be relevant toward understanding these and other

  20. How voltage-gated calcium channels gate forms of homeostatic synaptic plasticity.

    Science.gov (United States)

    Frank, C Andrew

    2014-01-01

    Throughout life, animals face a variety of challenges such as developmental growth, the presence of toxins, or changes in temperature. Neuronal circuits and synapses respond to challenges by executing an array of neuroplasticity paradigms. Some paradigms allow neurons to up- or downregulate activity outputs, while countervailing ones ensure that outputs remain within appropriate physiological ranges. A growing body of evidence suggests that homeostatic synaptic plasticity (HSP) is critical in the latter case. Voltage-gated calcium channels gate forms of HSP. Presynaptically, the aggregate data show that when synapse activity is weakened, homeostatic signaling systems can act to correct impairments, in part by increasing calcium influx through presynaptic CaV2-type channels. Increased calcium influx is often accompanied by parallel increases in the size of active zones and the size of the readily releasable pool of presynaptic vesicles. These changes coincide with homeostatic enhancements of neurotransmitter release. Postsynaptically, there is a great deal of evidence that reduced network activity and loss of calcium influx through CaV1-type calcium channels also results in adaptive homeostatic signaling. Some adaptations drive presynaptic enhancements of vesicle pool size and turnover rate via retrograde signaling, as well as de novo insertion of postsynaptic neurotransmitter receptors. Enhanced calcium influx through CaV1 after network activation or single cell stimulation can elicit the opposite response-homeostatic depression via removal of excitatory receptors. There exist intriguing links between HSP and calcium channelopathies-such as forms of epilepsy, migraine, ataxia, and myasthenia. The episodic nature of some of these disorders suggests alternating periods of stable and unstable function. Uncovering information about how calcium channels are regulated in the context of HSP could be relevant toward understanding these and other disorders.